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1

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

2

Theory of weak localization in ferromagnetic (Ga,Mn)As  

E-Print Network [OSTI]

We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

2009-01-01T23:59:59.000Z

3

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

4

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

5

Bending properties of epoxy resin matrix composites filled with NiMnGa ferromagnetic shape memory alloy powders  

E-Print Network [OSTI]

Bending properties of epoxy resin matrix composites filled with Ni­Mn­Ga ferromagnetic shape memory­Mn­Ga Composite materials Mechanical properties Microstructure Two types of epoxy resin matrix composites filled­Mn­Ga epoxy resin composites were reported, yet the bending property of Ni­Mn­Ga-polymer smart composites has

Zheng, Yufeng

6

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network [OSTI]

of the Zeeman Hamil- tonian gS#3;BBS?z+gj#3;BBj?z, and from Eq. #1;1#2;: m ? mMF #14; mQF = ? #3;B j S + j #1;gS ? gj#2; . #1;5#2; When j=1/2 and gS=gj =2 the quantum fluctuation correc- tion to the magnetization vanishes even though the mean- field...Low-temperature magnetization of (Ga,Mn)As semiconductors T. Jungwirth,1,2 J. Ma?ek,3 K. Y. Wang,2 K. W. Edmonds,2 M. Sawicki,4 M. Polini,5 Jairo Sinova,6 A. H. MacDonald,7 R. P. Campion,2,8 L. X. Zhao,2,8 N. R. S. Farley,2,8 T. K. Johal,8 G. van...

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

7

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network [OSTI]

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

8

Large interface diffusion in endotaxial growth of MnP films on GaP substrates  

SciTech Connect (OSTI)

The metal organic vapor deposition of MnP films on GaP (100) substrates is shown to have a substantial endotaxial component. A study of the growth time evolution of the endotaxial depths of MnP grains reveals a diffusion-controlled growth with a relatively large diffusion coefficient of Mn in GaP. The value (2.2?±?1.5)?×?10{sup ?15} (cm{sup 2}/s) obtained at 650?°C is at least two orders of magnitude larger than the reported Mn diffusion in bulk GaP. GaP surface mounds provide further indirect evidence that this large diffusion coefficient is concurrent with the out-diffusion of Ga atoms at the growing MnP/GaP interface. No trace of dislocations could be observed at or near this interface, which strongly suggests that Mn diffusion occurs through vacant sites generated by the difference between the crystallographic structures of MnP and GaP.

Nateghi, N., E-mail: seyyed-nima.nateghi@polymtl.ca; Ménard, D.; Masut, R. A. [Regroupement québécoise sur les matériaux de pointe (RQMP), Département de Génie Physique, Polytechnique Montréal, C.P. 6079, succ. Centre-ville, Montréal, Québec H3C 3A7 (Canada)

2014-10-07T23:59:59.000Z

9

Frequency Response of Acoustic-Assisted Ni–Mn–Ga Ferromagnetic- Shape-Memory-Alloy Actuator  

E-Print Network [OSTI]

A prototype of Ni–Mn–Ga based ferromagnetic-shape-memory-alloy (FSMA) actuator was designed and built; an acoustic-assist technique was applied to the actuator to enhance its performance. A piezoelectric stack actuator was ...

Techapiesancharoenkij, Ratchatee

10

Understanding and development of combined acoustic and magnetic actuation of Ni?MnGa single crystals  

E-Print Network [OSTI]

Ni-Mn-Ga based ferromagnetic shape memory alloys (FSMAs) have emerged as a promising new class of active materials capable of producing a large (several %) magnetic-field-induced strain (MFIS). FSMAs still have several ...

Techapiesancharoenkij, Ratchatee, 1979-

2007-01-01T23:59:59.000Z

11

Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors  

E-Print Network [OSTI]

-quality metallic samples increases linearly with the number of uncompensated local moments on Mn-Ga acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport...

Jungwirth, T.; Wang, KY; Masek, J.; Edmonds, KW; Konig, J.; Sinova, Jairo; Polini, M.; Goncharuk, NA; MacDonald, AH; Sawicki, M.; Rushforth, AW; Campion, RP; Zhao, LX; Foxon, CT; Gallagher, BL.

2005-01-01T23:59:59.000Z

12

Effect of MnAs/GaAs(001) film accommodations on the phase-transition temperature  

SciTech Connect (OSTI)

The phase-transition temperature of MnAs epitaxial films grown by molecular-beam epitaxy on GaAs(001) with different crystalline accommodations was studied by specular and grazing incidence x-ray diffraction. The transition temperature of MnAs films with tilted hexagonal c-axis orientations with respect to the GaAs substrate is higher than the most investigated nontilted films and reaches a value above room temperature, which is more suitable for device applications.

Iikawa, F.; Brasil, M.J.S.P.; Couto, O.D.D.; Adriano, C.; Giles, C.; Daeweritz, L. [Instituto de Fisica 'Gleb Wataghin', UNICAMP, Campinas-SP, C.P. 6165, 13083-970 (Brazil); Instituto de Fisica 'Gleb Wataghin', UNICAMP, Campinas-SP, C.P. 6165, 13083-970, Brazil and Laboratorio Nacional de Luz Sincrotron, CP-6192, 13084-971 Campinas-SP (Brazil); Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2004-09-20T23:59:59.000Z

13

Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors  

E-Print Network [OSTI]

-effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by decreasing the effective channel...

Owen, Man Hon Samuel

2010-11-16T23:59:59.000Z

14

Magnetic field-induced phase transformation and variant reorientation in Ni2MnGa and NiMnCoIn magnetic shape memory alloys  

E-Print Network [OSTI]

The purpose of this work is to reveal the governing mechanisms responsible for the magnetic field-induced i) martensite reorientation in Ni2MnGa single crystals, ii) stress-assisted phase transformation in Ni2MnGa single crystals and iii) phase...

Karaca, Haluk Ersin

2009-05-15T23:59:59.000Z

15

Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers  

SciTech Connect (OSTI)

Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.

Yastrubchak, O., E-mail: yastrub@hektor.umcs.lublin.pl [Institute of Physics, Maria Curie-Sklodowska University in Lublin, Pl. M. Curie-Sk?odowskiej 1, 20-031 Lublin (Poland); Institute of Semiconductor Physics, National Academy of Sciences, 41 pr. Nauki, 03028 Kyiv (Ukraine); Sadowski, J. [MAX-IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund (Sweden); Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Gluba, L.; ?uk, J.; Kulik, M. [Institute of Physics, Maria Curie-Sklodowska University in Lublin, Pl. M. Curie-Sk?odowskiej 1, 20-031 Lublin (Poland); Domagala, J. Z.; Andrearczyk, T.; Wosinski, T. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Rawski, M. [Analytical Laboratory, Maria Curie-Sklodowska University in Lublin, Pl. M. Curie-Sk?odowskiej 3, 20-031 Lublin (Poland)

2014-08-18T23:59:59.000Z

16

Neutron diffraction study of MnNiGa{sub 2}—Structural and magnetic behaviour  

SciTech Connect (OSTI)

MnNiGa{sub 2} crystallizes in the L21 (Heusler) structure and has a ferromagnetic ordering temperature T{sub C}???192?K. Rietveld refinement of the neutron diffraction patterns indicates that the Ga atoms occupy the equivalent 8c position, while Mn and Ni share the 4a (0, 0, 0) and 4b (0.5, 0.5, 0.5) sites with a mixed occupancy of Mn and Ni atoms. It is found that that ?83% of Mn and ?17% Ni are located at the 4a site while ?83% of Ni and ?17% Mn occupy the 4b site. There is no evidence of a magneto-volume effect around T{sub C}. In agreement with this finding, our detailed critical exponent analyses of isothermal magnetization curves and the related Arrott plots confirm that the magnetic phase transition at T{sub C} is second order.

Wang, J. L., E-mail: jianli@uow.edu.au [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Bragg Institute, ANSTO, Lucas Heights, NSW 2234 (Australia); School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, Canberra, ACT 2600 (Australia); Ma, L.; Wu, G. H. [Institute of Physics, Chinese Academy of Science, Beijing 100190 (China); Hofmann, M. [FRM-II, Technische Universität München, 85747 Garching (Germany); Avdeev, M.; Kennedy, S. J. [Bragg Institute, ANSTO, Lucas Heights, NSW 2234 (Australia); Campbell, S. J. [School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, Canberra, ACT 2600 (Australia); Md Din, M. F.; Dou, S. X. [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Hoelzel, M. [FRM-II, Technische Universität München, 85747 Garching (Germany); Fachbereich Materialwissenschaften, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

2014-05-07T23:59:59.000Z

17

Effect of a high electric field on the conductivity of MnGa{sub 2}S{sub 4}, MnIn{sub 2}S{sub 4}, and MnGaInS{sub 4} single crystals  

SciTech Connect (OSTI)

The results of studying the effect of a high electric field on the conductivity of MnGa{sub 2}S{sub 4}, MnIn{sub 2}S{sub 4}, and MnGaInS{sub 4} single crystals are reported. The activation energy is determined in high and low electric fields. It is established that the decrease in the activation energy with increasing the external voltage is associated with decreasing the depth of the potential well, in which the electron is located.

Niftiev, N. N. [Azerbaijan State Pedagogical University (Azerbaijan); Tagiev, O. B. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2009-09-15T23:59:59.000Z

18

Disentangling the Mn moments on different sublattices in the half-metallic ferrimagnet Mn3?xCoxGa  

SciTech Connect (OSTI)

Ferrimagnetic Mn{sub 3-x}Co{sub x}Ga compounds have been investigated by magnetic circular dichroism in x-ray absorption (XMCD). Compounds with x > 0.5 crystallize in the CuHg{sub 2}Ti structure. A tetragonal distortion of the cubic structure occurs for x {le} 0.5. For the cubic phase, magnetometry reveals a linearly increasing magnetization of 2x Bohr magnetons per formula unit obeying the generalized Slater-Pauling rule. XMCD confirms the ferrimagnetic character with Mn atoms occupying two different sublattices with antiparallel spin orientation and different degrees of spin localization and identifies the region 0.6 < x {le} 0.8 as most promising for a high spin polarization at the Fermi level. Individual Mn moments on inequivalent sites are compared to theoretical predictions.

Klaer, P.; Jenkins, C.A.; Alijani, V.; Winterlik, J.; Balke, B.; Felser, C.; Elmers, H.J.

2011-05-03T23:59:59.000Z

19

Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As  

E-Print Network [OSTI]

Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the Ga...

Vyborny, Karel; Kucera, Jan; Sinova, Jairo; Rushforth, A. W.; Gallagher, B. L.; Jungwirth, T.

2009-01-01T23:59:59.000Z

20

Synthesis and Characterization of NiMnGa Ferromagnetic Shape Memory Alloy Thin Films  

E-Print Network [OSTI]

, it is very important to understand their behavior and examine their properties. This thesis is an effort to contribute to the literature of Ni-Mn-Ga thin films as ferromagnetic shape memory alloys. The focus of this project is to develop a recipe...

Jetta, Nishitha

2011-10-21T23:59:59.000Z

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer  

SciTech Connect (OSTI)

We investigated high-field electroluminescence (EL) in semiconductor tunnel junctions with a Mn-doped GaAs layer (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show visible light emissions with two peaks at 1.94?eV and 2.19?eV, which are caused by d-d transitions of the Mn atoms excited by hot electrons. The threshold voltages for band-gap and visible light EL in the tunnel junctions with a GaAs:Mn electrode are 1.3?V higher than those of GaAs:Mn excited by hot holes in reserve biased p{sup +}-n junctions, which is consistent with the hot carrier transport in the band profiles of these structures. Our EL results at room temperature show that the electron temperature in GaAs:Mn can be as high as ?700?K for a low input electrical power density of 0.4?W/cm{sup 2}, while the lattice temperature of the GaAs:Mn layer can be kept at 340?K.

Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-0033 (Japan); Yatsui, Takashi; Ohtsu, Motoichi; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nanophotonics Research Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2014-09-21T23:59:59.000Z

22

Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires  

SciTech Connect (OSTI)

We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (?0.0001%) exhibit a low resistance of a few k? at 300?K and a 4% positive MR at 1.6?K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several M? at 300?K and a large negative MR of 85% at 1.6?K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga{sub 1?x}Mn{sub x}As nanowires for future nanospintronics.

Paschoal, W.; Kumar, Sandeep; Jain, V.; Pettersson, H., E-mail: hakan.pettersson@hh.se [Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund (Sweden); Department of Mathematics, Physics and Electrical Engineering, Halmstad University, Box 823, SE-301 18, Halmstad (Sweden); Jacobsson, D.; Samuelson, L. [Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund (Sweden); Johannes, A.; Ronning, C. [Institute for Solid State Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Canali, C. M.; Pertsova, A. [Department of Physics and Electrical Engineering, Linneaus University, SE-39233 Kalmar (Sweden); Dick, K. A. [Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund (Sweden); Center for Analysis and Synthesis, Lund University, Box 124, S-221 00 Lund (Sweden)

2014-04-14T23:59:59.000Z

23

Heteroepitaxial growth and surface structure of L1{sub 0}-MnGa(111) ultra-thin films on GaN(0001)  

SciTech Connect (OSTI)

L1{sub 0}-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 × 2 reconstruction along with small patches of 1 × 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 × 2 and a Mn-rich 2 × 2 surface structure give the best agreement with the observed experimental images.

Mandru, Andrada-Oana; Wang, Kangkang; Cooper, Kevin; Ingram, David C.; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)] [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Garcia Diaz, Reyes; Takeuchi, Noboru [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States) [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autónoma de México, Apartado Postal 14, Ensenada Baja California, Codigo Postal 22800 (Mexico); Haider, Muhammad [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States) [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Department of Physics, King Fahd University of Petroleum and Minerals, Dhahran, 31261 (Saudi Arabia)

2013-10-14T23:59:59.000Z

24

Optical transitions in MnGa{sub 2}Se{sub 4}  

SciTech Connect (OSTI)

The dependence of the absorption coefficient on incident photon energy in a MnGa{sub 2}Se{sub 4} single crystal has been investigated in the temperature range 110-295 K. Using group-theory analysis of the electron state symmetry and comparison of the symmetry of the energy spectrum of MnGa{sub 2}Se{sub 4} and its isoelectronic analogs, a conclusion about the character of optical transitions has been drawn. It is shown that the features observed at 2.31 and 2.45 eV are related to the intracenter transitions {sup 6}A{sub 1}{sup 1} {yields} {sup 4}T{sub 2}({sup 4}G) and {sup 6}A{sub 1}{sup 2} {yields} {sup 4}T{sub 2}({sup 4}G). The {sup 6}A{sub 1} state is split by the crystal field.

Tagiev, B. G.; Kerimova, T. G., E-mail: ktaira@physics.ab.az; Tagiev, O. B.; Asadullayeva, S. G.; Mamedova, I. A. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2012-06-15T23:59:59.000Z

25

A Single Layer of Mn in a GaAs Quantum Well: A Ferromagnet with Quantum Fluctuations  

SciTech Connect (OSTI)

Some of the highest transition temperatures achieved for Mn-doped GaAs have been in &-doped heterostructures with well-separated planes of Mn. But in the absense of magnetic anisotropy, the Mermin-Wagner theorem implies that a single plane of magnetic ions cannot be ferromagnetic. We show that the same mechanism that produces magnetic frustration and suppresses the transition can stabilize ferromagnetic order for a single layer of Mn in a GaAs quantum well. But this comes at the price of quantum fluctuations that suppress the ordered moment from that of a fully saturated ferromagnet.

Melko, Roger G [ORNL; Fishman, Randy Scott [ORNL; Reboredo, Fernando A [ORNL

2007-01-01T23:59:59.000Z

26

Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors  

SciTech Connect (OSTI)

Electroluminescence characteristics of light-emitting diodes based on InGaAs/GaAs quantum well heterostructures with an injector layer made of ferromagnetic metal (Ni), semimetal compound (MnSb), or magnetic semiconductor (InMnAs) were comparatively studied. The general feature is electroluminescence quenching as the spacer layer thickness between a quantum well and a magnetic injector decreases. It was found that the temperature dependence of the electroluminescence in diodes with Ni and MnSb is caused by thermal ejection of carriers from the quantum well; in diodes with InMnAs, it is caused by the temperature dependence of the carrier concentration in magnetic semiconductor and thermal ejection of carriers from the quantum well in the high-temperature region.

Prokof'eva, M. M., E-mail: marinaprkfeva@rambler.ru [Lobachevsky State University (Russian Federation); Dorokhin, M. V.; Danilov, Yu. A.; Kudrin, A. V.; Vikhrova, O. V. [Lobachevsky State University of Nizhni Novgorod, Physicotechnical Research Institute (Russian Federation)

2010-11-15T23:59:59.000Z

27

Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy  

SciTech Connect (OSTI)

Magneto-optical properties of single crystal of Ni{sub 50.1}Mn{sub 28.4}Ga{sub 21.5} magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along (100) planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323?K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4?eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significant spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.

Veis, M., E-mail: veis@karlov.mff.cuni.cz; Beran, L.; Zahradnik, M.; Antos, R. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 12116 Prague (Czech Republic); Straka, L. [Aalto University School of Engineering, PL14200, FIN-00076 Aalto (Finland); Kopecek, J.; Fekete, L.; Heczko, O. [Institute of Physics, ASCR, Na Slovance 2, 182 21 Prague (Czech Republic)

2014-05-07T23:59:59.000Z

28

Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys  

SciTech Connect (OSTI)

Vacancies control any atomic ordering process and consequently most of the order-dependent properties of the martensitic transformation in ferromagnetic shape memory alloys. Positron annihilation spectroscopy demonstrates to be a powerful technique to study vacancies in NiMnGa alloys quenched from different temperatures and subjected to post-quench isothermal annealing treatments. Considering an effective vacancy type the temperature dependence of the vacancy concentration has been evaluated. Samples quenched from 1173?K show a vacancy concentration of 1100?±?200?ppm. The vacancy migration and formation energies have been estimated to be 0.55?±?0.05?eV and 0.90?±?0.07?eV, respectively.

Merida, D., E-mail: david.merida@ehu.es [Fisika Aplikatua II Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); Elektrizitate eta Elektronika Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); García, J. A. [Fisika Aplikatua II Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); BC Materials (Basque Centre for Materials, Application and Nanostructures), 48040 Leioa (Spain); Sánchez-Alarcos, V.; Pérez-Landazábal, J. I.; Recarte, V. [Departamento de Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Plazaola, F. [Elektrizitate eta Elektronika Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain)

2014-06-09T23:59:59.000Z

29

Spin relaxation time dependence on optical pumping intensity in GaAs:Mn  

SciTech Connect (OSTI)

We analyze the dependence of electron spin relaxation time on optical pumping intensity in a partially compensated acceptor semiconductor GaAs:Mn using analytic solutions for the kinetic equations of the charge carrier concentrations. Our results are applied to previous experimental data of spin-relaxation time vs. excitation power for magnetic concentrations of approximately 10{sup 17}?cm{sup ?3}. The agreement of our analytic solutions with the experimental data supports the mechanism of the earlier-reported atypically long electron-spin relaxation time in the magnetic semiconductor.

Burobina, V. [Department of Physics and Astronomy, University of Utah, 115 South 1400 East, Salt Lake City, Utah 84112-0830 (United States); Binek, Ch. [Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, Theodore Jorgensen Hall, 855 North 16th Street, University of Nebraska, P.O. Box 880299, Lincoln, Nebraska 68588-0299 (United States)

2014-04-28T23:59:59.000Z

30

Ferromagnetic transition temperature enhancement in (Ga,Mn)As semiconductors by carbon codoping  

E-Print Network [OSTI]

-1829/2003/68~16!/161202~4!/$20.00 68 161202- t in ?Ga,Mn?As semiconductors codoping ,2,4 and A. H. MacDonald2 a? 10, 162 53 Praha 6, Czech Republic y Station C1600, Austin, Texas 78712-0264, USA 2, 182 21 Praha 8, Czech Republic y, College Station, Texas 77843-4242, USA d 13... Society1 RAPID COMMUNICATIONS JUNGWIRTH, MASE? K, SINOVA, AND MacDONALD PHYSICAL REVIEW B 68, 161202~R! ~2003! The above qualitative analysis of formation energies sug- gests that CAs codoping is favorable for achieving high Curie temperatures. Unlike...

Jungwirth, T.; Masek, J.; Sinova, Jairo; MacDonald, AH.

2003-01-01T23:59:59.000Z

31

Delocalization and hybridization enhance the magnetocaloric effect in Ni2Mn0.75Cu0.25Ga  

SciTech Connect (OSTI)

In view of the looming energy crisis facing our planet, attention increasingly focuses on materials potentially useful as a basis for energy saving technologies. The discovery of giant magnetocaloric (GMC) compounds - materials that exhibit especially large changes in temperature as the externally applied magnetic field is varied - is one such compound 1. These materials have potential for use in solid state cooling technology as a viable alternative to existing gas based refrigeration technologies that use choro-fluoro - and hydro-fluoro-carbon chemicals known to have a severe detrimental effect on human health and environment 2,3. Examples of GMC compounds include Gd5(SiGe)4 4, MnFeP1-xAsx 5 and Ni-Mn-Ga shape memory alloy based compounds 6-8. Here we explain how the properties of one of these compounds (Ni2MnGa) can be tuned as a function of temperature by adding dopants. By altering the free energy such that the structural and magnetic transitions coincide, a GMC compound that operates at just the right temperature for human requirements can be obtained 9. We show how Cu, substituted for Mn, pulls the magnetic transition downwards in temperature and also, counterintuitively, increases the delocalization of the Mn magnetism. At the same time, this reinforces the Ni-Ga chemical bond, raising the temperature of the martensite-austenite transition. At 25percent doping, the two transitions coincide at 317 K.

Roy, Sujoy; Blackburn, E.; Valvidares, S. M.; Fitzsimmons, M. R.; Vogel, Sven C.; Khan, M.; Dubenko, I.; Stadler, S.; Ali, N.; Sinha, S. K.; Kortright, J. B.

2008-11-26T23:59:59.000Z

32

Growth and structure of epitaxial Pb{sub 1-x}Mn{sub x}Se(Ga) films  

SciTech Connect (OSTI)

The growth and structure of Pb{sub 1-x}Mn{sub x}Se (Ga) (N{sub Ga} = 0.8 at %) films with thicknesses of 0.3-0.5 {mu}m, grown on single-crystal PbSe{sub 1-x}S{sub x} (100) substrates by molecular-beam epitaxy, have been studied. It is established that films grow in a face-centered cubic lattice with the (100) orientation, reproducing the substrate orientation. The optimal conditions for obtaining photosensitive epitaxial films with perfect crystal structure are determined (W{sub 1/2} = 70-80'').

Nuriyev, I. R., E-mail: mhagiyev@yahoo.com; Gadzhiyev, M. B.; Sadigov, R. M. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2009-03-15T23:59:59.000Z

33

Effect of ball milling and post-annealing on magnetic properties of Ni49.8Mn28.5Ga21.7 alloy powders  

E-Print Network [OSTI]

, The University of Western Australia, Crawley WA6009, Australia c Department of Advanced Materials mechanical energy absorption [8,9]. Ni­Mn­Ga powders have been prepared by various methods, including spark

Zheng, Yufeng

34

Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy  

SciTech Connect (OSTI)

The magnetic domain structure in single crystals of a Heusler shape memory compound near the composition Fe{sub 2}MnGa was observed during phase transition by photoelectron emission microscopy at Beamline 11.0.1.1 of the Advanced Light Source. The behavior is comparable with recent observations of an adaptive martensite phase in prototype Ni{sub 2}MnGa, although the pinning in the recent work is an epitaxial interface and in this work the e#11;ective pinning plane is a boundary between martensitic variants that transform in a self-accommodating way from the single crystal austenite phase present at high temperatures. Temperature dependent observations of the twinning structure give information as to the coupling behavior between the magnetism and the structural evolution.

Jenkins, Catherine; Scholl, Andreas; Kainuma, R.; Elmers, Hans-Joachim; Omori, Toshihiro

2012-01-18T23:59:59.000Z

35

Perpendicular-to-Parallel Spin Reorientation in a Mn-Doped GaAs Quantum Canting or Phase Separation  

SciTech Connect (OSTI)

It is well known that the magnetic anisotropy in a compressively-strained Mn-doped GaAs film changes from perpendicular to parallel with increasing hole concentration p. We study this reorientation transition at T = 0 for a quantum well with Mn impurities confined to the z = 0 plane. With increasing p, the angle 0 that minimizes the energy E increases continuously from 0 (perpendicular anisotropy) to /2 (parallel anisotropy) within some range of p. The shape of Emin(p) suggests that the quantum well becomes phase separated with regions containing low hole concentrations and perpendicular moments interspersed with other regions containing high hole concentrations and parallel moments. However, consideration of the Coulomb energy costs associated with phase separation suggests that the true magnetic state in the transition region is canted with 0 < < /2.

Fishman, Randy Scott [ORNL; Reboredo, Fernando A [ORNL; Brandt, Alex B [ORNL; Moreno, Juana [University of North Dakota, Grand Forks

2007-01-01T23:59:59.000Z

36

Character of states near the Fermi level in (Ga,Mn)As: Impurity to valence band crossover RID E-6453-2010  

E-Print Network [OSTI]

doping region. In GaAs:Mn, the most remarkable among these is the onset of carrier mediated ferromagnetism. The understanding of mag- netic properties of these doped semiconductors which are close to the metal-insulator transition can, therefore, only... theory community7,15,18?22 and provides a qualitative, and often a semiquantitative, description of micromagnetic and magne- totransport characteristics of bulk and microstructured #1;Ga,Mn#2;As ferromagnets.6,7,15 Our paper, which we believe further...

Jungwirth, T.; Sinova, Jairo; MacDonald, A. H.; Gallagher, B. L.; Novak, V.; Edmonds, K. W.; Rushforth, A. W.; Campion, R. P.; Foxon, C. T.; Eaves, L.; Olejnik, E.; Masek, J.; Yang, S-R Eric; Wunderlich, J.; Gould, C.; Molenkamp, L. W.; Dietl, T.; Ohno, H.

2007-01-01T23:59:59.000Z

37

E-Print Network 3.0 - alloy ni-mn-ga single Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mathematics 35 Lattice dynamics and phonon softening in Ni-Mn-Al Heusler alloys Xavier Moya, Llus Maosa,* and Antoni Planes Summary: as 10% have been re- ported in single...

38

Forestry Policies (Georgia)  

Broader source: Energy.gov [DOE]

Georgia's Forests are managed by the Georgia Forestry Commission. In 2009 the Commission completed a statewide assessment of biomass resources:

39

Georgia Hazardous Site Response Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Hazardous Site Response Act is Georgia’s version of Superfund. The Act provides for graduated fees on the disposal of hazardous waste, a trust fund to enable the EPD to clean up or plan...

40

Georgia Groundwater Use Act (Georgia)  

Broader source: Energy.gov [DOE]

The purpose of the Georgia Groundwater Use Act is to establish procedures to be followed to obtain a permit to withdraw, obtain or utilize groundwater and for the submission of information...

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Georgia Radiation Control Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Radiation Control Act is designed to prevent any associated harmful effects upon the environment or the health and safety of the public through the institution and maintenance of a...

42

Georgia Utility Facility Protection Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Utility Facility Protection Act (GUFPA) was established to protect the underground utility infrastructure of Georgia. GUFPA mandates that, before starting any mechanized digging or...

43

Terahertz dynamics of photogenerated carriers in ferromagnetic InGaMnAs G. A. Khodaparast, D. C. Larrabee, and J. Konoa)  

E-Print Network [OSTI]

response of InGaMnAs/InP by two-color pump­ probe spectroscopy, using an intense near-infrared beam used an intense picosecond pulse of near- infrared NIR radiation to create a large density of nonequilibrium carriers, which modifies the transmission and reflection of a delayed pulse of terahertz THz

Natelson, Douglas

44

Growth and structure of photosensitive Pb{sub 1-x}Mn{sub x}Te(Ga) epitaxial films  

SciTech Connect (OSTI)

The growth and structure of (1-1.5)-{mu}m-thick Pb{sub 1-x}Mn{sub x}Te(Ga)(x = 0.06) films with 0.4-0.9 at % of gallium, grown on BaF{sub 2}(111) and Pb{sub 1-x}Sn{sub x}Te (x = 0.2) (100) substrates by molecular beam epitaxy, have been investigated. It is established that the films are crystallized into an fcc structure, and their growth planes are (111) and (100), according to the substrate orientation. The optimal conditions for obtaining high-resistivity photosensitive p-and n-type films with a perfect crystal structure (W{sub 1/2} = 80''-100'') have been determined.

Nuriev, I. R.; Sadygov, R. M.; Nazarov, A. M., E-mail: afinnazarov@yahoo.com [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

2008-05-15T23:59:59.000Z

45

Georgia Geriatric Education Center  

E-Print Network [OSTI]

Georgia Geriatric Education Center © Photography courtesy of the U.S. Administration on Aging. Georgia Geriatric Education Center Latestresourcesandtrainingforbestpracticesingerontologyandgeriatrics. The Georgia Geriatric Education Center (GGEC) is a statewide effort designed to help you access the latest

Arnold, Jonathan

46

Georgia Erosion and Sedimentation Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Erosion and Sedimentation Act (GESA) is designed to protect vegetated buffers. GESA establishes a minimum undisturbed, vegetated buffer of 25 feet for all streams in Georgia (measured...

47

Georgia Water Quality Control Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Water Quality Control Act (WQCA) is a set of environmental regulations and permitting requirements that comply with the federal Clean Water Act. The Georgia Water Quality Control Act...

48

Georgia Nuclear Energy Financing Act (Georgia)  

Broader source: Energy.gov [DOE]

The “Georgia Nuclear Energy Financing Act,” amends existing Georgia law to allow a utility to recover from its customers the costs of financing associated with the construction of a nuclear plant...

49

Co doping enhanced giant magnetocaloric effect in Mn{sub 1-x}Co{sub x}As films epitaxied on GaAs (001)  

SciTech Connect (OSTI)

A giant magnetocaloric effect was found in series of Mn{sub 1-x}Co{sub x}As films epitaxied on GaAs (001). The maximum magnetic entropy change caused by a magnetic field of 4 T is as large as 25 J/kg K around room temperature, which is about twice the value of pure MnAs film. The observed small thermal hysteresis is more suitable for practical application. Growing of layered Mn{sub 1-x}Co{sub x}As films with Co concentration changing gradually may draw layered active magnetic regenerator refrigerators closer to practical application. Our experimental result may provide the possibility for the combination of magnetocaloric effect and microelectronic circuitry.

Xu, P. F.; Nie, S. H.; Meng, K. K.; Wang, S. L.; Chen, L.; Zhao, J. H. [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2010-07-26T23:59:59.000Z

50

Anti-site disorder and improved functionality of Mn{sub 2}NiX (X = Al, Ga, In, Sn) inverse Heusler alloys  

SciTech Connect (OSTI)

Recent first-principles calculations have predicted Mn{sub 2}NiX (X?=?Al, Ga, In, Sn) alloys to be magnetic shape memory alloys. Moreover, experiments on Mn{sub 2}NiGa and Mn{sub 2}NiSn suggest that the alloys deviate from the perfect inverse Heusler arrangement and that there is chemical disorder at the sublattices with tetrahedral symmetry. In this work, we investigate the effects of such chemical disorder on phase stabilities and magnetic properties using first-principles electronic structure methods. We find that except Mn{sub 2}NiAl, all other alloys show signatures of martensitic transformations in presence of anti-site disorder at the sublattices with tetrahedral symmetry. This improves the possibilities of realizing martensitic transformations at relatively low fields and the possibilities of obtaining significantly large inverse magneto-caloric effects, in comparison to perfect inverse Heusler arrangement of atoms. We analyze the origin of such improvements in functional properties by investigating electronic structures and magnetic exchange interactions.

Paul, Souvik; Kundu, Ashis; Ghosh, Subhradip, E-mail: subhra@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India); Sanyal, Biplab [Department of Physics and Astronomy, Uppsala University, Box 516, 75120 Uppsala (Sweden)

2014-10-07T23:59:59.000Z

51

Table 2 -Lime use and practices on Corn, major producing states, 2001 CO GA IL IN IA KS KY MI MN MO NE NY NC ND OH PA SD TX WI Area  

E-Print Network [OSTI]

Table 2 - Lime use and practices on Corn, major producing states, 2001 CO GA IL IN IA KS KY MI MN.7 Table 2 - Lime use and practices on Corn, major producing states, 2000 CO IL IN IA KS KY MI MN MO NE NY use and practices on Corn, major producing states, 1999 CO IL IN IA KS KY MI MN MO NE NC OH SD TX WI

Kammen, Daniel M.

52

Georgia Water Resources Institute Annual Technical Report  

E-Print Network [OSTI]

, and lake associations. At the national level, GWRI has collaborative efforts with the California Energy with support from the U.S. Agency for International Development, World Bank, Food and Agriculture Organization Prices in Georgia" USGS 104B/GWRI Project, Susanna Ferriera # 2011GA275B #1266663 (3) Impact of Upstream

53

Determination of the Fermi level position in dilute magnetic Ga{sub 1-x}Mn{sub x}N films  

SciTech Connect (OSTI)

We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite Ga{sub 1?x}Mn{sub x}N films with x=4% and x=10% as grown by molecular beam epitaxy. By means of ellipsometric measurements, the real part of the frequency-dependent conductivity is determined. An electronic model in the framework of the effective bond-orbital model is parameterized in order to theoretically reproduce the measured transport properties. Predictions for the long-wavelength behaviour as a function of the Fermi level are made. The corresponding density of states obtained in this model is in qualitative agreement with first-principle calculations. The absence of a significant experimental peak in the AC conductivity for small frequencies indicates that the Fermi level lies in a gap between two Mn-related impurity bands in the host band gap.

Barthel, S., E-mail: sbarthel@itp.uni-bremen.de; Mourad, D.; Czycholl, G. [Institute for Theoretical Physics, University of Bremen, D-28359 Bremen (Germany); Kunert, G.; Figge, S.; Hommel, D. [Institute of Solid State Physics, University of Bremen, D-28359 Bremen (Germany); Gartner, M.; Stoica, M. [Institute of Physical Chemistry “Ilie Murgulescu,” Romanian Academy, 060021 Bucharest (Romania); Kruse, C. [Institute of Solid State Physics, University of Bremen, D-28359 Bremen (Germany); Department of Physics, University of Osnabrück, D-49076 Osnabrück (Germany)

2014-03-28T23:59:59.000Z

54

Georgia Underground Storage Tank Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Underground Storage Act (GUST) provides a comprehensive program to prevent, detect, and correct releases from underground storage tanks (“USTs”) of “regulated substances” other than...

55

Itinerant and localized magnetic moments in ferrimagnetic Mn{sub 2}CoGa thin films identified with x-ray magnetic linear dichroism: experiment and ab initio theory  

SciTech Connect (OSTI)

Epitaxial thin films of the half-metallic X{sub a}-compound Mn{sub 2}CoGa (Hg{sub 2}CuTi prototype) were prepared by dc magnetron co-sputtering with different heat treatments on MgO (001) substrates. High-quality #12;lms with a bulk magnetization of 1.95(5) {mu}{sub #22;}B per unit cell were obtained. The average Mn magnetic moment and the Co moment are parallel, in agreement with theory. The x-ray magnetic circular dichroism spectra agree with calculations based on density functional theory and reveal the antiparallel alignment of the two inequivalent Mn moments. X-ray magnetic linear dichroism allows to distinguish between itinerant and localized Mn moments. It is shown that one of the two Mn moments has localized character, whereas the other Mn moment and the Co moment are itinerant.

Meinert, M.; Schmalhorst, J; Klewe, C.; Reiss, G.; Arenholz, E.; Bohnert, T.; Nielsch, K.

2011-08-08T23:59:59.000Z

56

Dynamics of Impurity and Valence Bands in Ga1-xMnxAs Within the Dynamical Mean-Field Approximation  

SciTech Connect (OSTI)

We calculate the density-of-states and the spectral function of Ga1?xMnxAs within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3/2 GaAs hole bands and the exchange interaction between the magnetic ions and the itinerant holes. We study the quasiparticle and impurity bands in the paramagnetic and ferromagnetic phases for different values of impurity-hole coupling Jc at a Mn doping of x=0.05. By analyzing the anisotropic angular distribution of the impurity band carriers at T=0, we conclude that the carrier polarization is optimal when the carriers move along the direction parallel to the average magnetization.

Majidi, M. A. [University of Cincinnati; Moreno, Juana [University of North Dakota, Grand Forks; Jarrell, Mark [University of Cincinnati; Fishman, Randy Scott [ORNL; Aryanpour, K. A. [University of California, Davis

2006-08-01T23:59:59.000Z

57

Georgia Tech Dangerous Gas  

E-Print Network [OSTI]

1 Georgia Tech Dangerous Gas Safety Program March 2011 #12;Georgia Tech Dangerous Gas Safety.......................................................................................................... 5 6. DANGEROUS GAS USAGE REQUIREMENTS................................................. 7 6.1. RESTRICTED PURCHASE/ACQUISITION RULES: ................................................ 7 7. FLAMMABLE GAS

Sherrill, David

58

Single crystal neutron diffraction study of lattice and magnetic structures of 5M modulated Ni2Mn1.14Ga0.86  

SciTech Connect (OSTI)

A comprehensive description of the crystal and magnetic structures of Ni-Mn-Ga magnetic shape memory alloys is important to understand the physical origins of their magnetoelastic properties. These structural details for an off-stoichiometric Ni2Mn1.14Ga0.86 alloy have been obtained from refinement of high-resolution single crystal neutron diffraction data following a (3+1)-dimensional superspace formalism. In particular, the structure adopts a P2/m( 0 )00 (3+1)-D superspace symmetry with the following fundamental lattice parameters: a=4.255(4) , b=5.613(4) , c=4.216(3) , a commensurate periodicity of 5M and a modulation wave vector of . The magnetic moments are aligned along the b-axis. The modulations for atomic site displacements, site occupancies and magnetic moments are elucidated from a (3+1)-D refinement of the neutron diffraction data. In addition to atomic displacements corresponding to shear waves along <110>, distortions of Ni-centric tetrahedra are also evident. Physical interpretations for the different structural distortions and their relationship with magnetic properties are discussed.

Pramanick, Abhijit [ORNL] [ORNL; Wang, Xiaoping [ORNL] [ORNL; An, Ke [ORNL] [ORNL; Stoica, Alexandru Dan [ORNL] [ORNL; Hoffmann, Christina [ORNL] [ORNL; Wang, Xun-Li [ORNL] [ORNL

2012-01-01T23:59:59.000Z

59

Stoichiometry dependent phase transition in Mn-Co-Ga-based thin films: From cubic in-plane, soft magnetized to tetragonal perpendicular, hard magnetized  

SciTech Connect (OSTI)

Epitaxial thin films of Mn{sub 3-x}Co{sub x}Ga were grown on MgO by magnetron co-sputtering with different Co content. Dependent on the Co content tetragonal or cubic structures are obtained. The composition dependence of saturation magnetization M{sub S} and uniaxial magnetic anisotropy K{sub u} in the epitaxial films were investigated. A high magnetic anisotropy K{sub u} of 1.2 MJ m{sup -3} was achieved for the Mn{sub 2.6}Co{sub 0.3}Ga{sub 1.1} film with low magnetic moment of 0.84 {mu}{sub B}. The valence band spectra of the films were investigated mainly by hard x-ray photoelectron spectroscopy. The evidence of sharp states in the cubic case, which are smeared out in the tetragonal case, proof the existence of a van Hove singularity that causes a band Jahn-Teller effect accompanied by a tetragonal distortion. These differences are in well agreement to the ab-initio calculations of the electronic structure.

Ouardi, Siham; Fecher, Gerhard H.; Stinshoff, Rolf; Felser, Claudia [Max Planck Institute for Chemical Physics of Solids, 01187 Dresden (Germany); Kubota, Takahide; Mizukami, Shigemi; Miyazaki, Terunobu [WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577 (Japan); Ikenaga, Eiji [Japan Synchrotron Radiation Research Institute, SPring-8, Hyogo 679-5198 (Japan)

2012-12-10T23:59:59.000Z

60

Changes of the local distortions and colossal magnetoresistive properties of La(0.7)Ca(0.3)MnO(3) induced by Ti or Ga defects  

SciTech Connect (OSTI)

The magnetoresistive properties of La0.7Ca0.3MnO3 change rapidly when Ti or Ga are substituted on the Mn site for concentrations, x, from 1 to 10 percent. The samples exhibit colossal magnetoresistance (CMR) and the resistivity increases dramatically with dopant concentration. The temperature of the resistivity peak, TR, shifts rapidly to lower temperatures with increasing x and the ferromagnetic transition broadens. However, the transition temperature, Tc, is only slightly suppressed. Consequently, TR occurs well below Tc for x above 2 percent. Investigations of these materials using Mn XAFS show that changes in the local structure, parametrized by the pair-distribution width, sigma, correlate well with Tc and the sample magnetization. For a given dopant, the resistivity peak occurs when sigma{sup 2} decreases below a critical value. Both dopants produce extended defects which increases the resistivity of the nearby materials considerably. The data suggest that even at x {approx}4 percent, most of the sites are slightly distorted at low T.

Bridges, F.; Cao, D.; Anderson, M.; Ramirez, A.P.; Olapinski, M.; Subramanian, M.A.; Booth, C.H.; Kwei, G.

2002-07-12T23:59:59.000Z

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Georgia Safe Dams Act of 1978 (Georgia)  

Broader source: Energy.gov [DOE]

The purpose of the Georgia Safe Dams Act is to provide regulation, inspection and permitting of dams to the State. The Director of the Environmental Protection Division (EPD) is responsible for...

62

Georgia Surface Mining Act of 1968 (Georgia)  

Broader source: Energy.gov [DOE]

This law regulates all surface mining in Georgia, including the coastal zone. It includes provisions to “advance the protection of fish and wildlife and the protection and restoration of land,...

63

Georgia Air Quality Control Act (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Air Quality Control Act (AQCA) is a set of environmental regulations, permitting requirements, and air quality standards that control the amount of pollutants emitted and who emits them...

64

Systematic analysis of the crystal structure, chemical ordering, and microstructure of Ni-Mn-Ga ferromagnetic shape memory alloys  

E-Print Network [OSTI]

Ni-n-Ga based ferromagnetic shape-memory alloys (FSMAs) have shown great promise as an active material that yields a large output strain over a range of actuation frequencies. The maximum strain has been reported to be 6% ...

Richard, Marc Louis

2005-01-01T23:59:59.000Z

65

Measurement of the transmission magnetic circular dichroism of Ga{sub 1?x}Mn{sub x}As epilayers using a built-in p-i-n photodiode  

SciTech Connect (OSTI)

By constructing a GaMnAs epilayer/semi-insulating In{sub 0.2}Ga{sub 0.8}As/(001) n{sup +}-GaAs substrate layer structure as a built-in p-i-n photodiode, we developed a scheme for on-chip measurements of transmission magnetic circular dichroism (T-MCD). Both the hysteresis loops in the magnetic field sweeps and the wavelength scans at saturated magnetic fields measured using the new T-MCD scheme, illustrated the same features as those previously measured on the freestanding GaMnAs thin films by conventional T-MCD. Because a large group of epitaxially grown magnetic film/semiconductor heterostructures, such as Fe, NiFe, CoFeAl, and MnGa films on semiconductor substrates, are becoming important new building blocks for semiconductor-based spin field-effect transistor, perpendicular magnetic tunnel junction (p-MTJ) and lateral MTJ devices, the new T-MCD scheme can be applied to tests of their magnetic properties by forming either p-i-n or Schottky photodiodes.

He, Z. X.; Zheng, H. Z., E-mail: hzzheng@red.semi.ac.cn; Wang, H. L.; Zhao, J. H. [State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)

2014-02-28T23:59:59.000Z

66

Shore Protection Act (Georgia)  

Broader source: Energy.gov [DOE]

The Shore Protection Act is the primary legal authority for protection and management of Georgia's shoreline features including sand dunes, beaches, sandbars, and shoals, collectively known as the...

67

Protection of Tidewaters (Georgia)  

Broader source: Energy.gov [DOE]

The Protection of Tidewaters Act establishes the State of Georgia as the owner of the beds of all tidewaters within the State, except where title by a private party can be traced to a valid British...

68

Annealing temperature and thickness dependence of magnetic properties in epitaxial L1{sub 0}-Mn{sub 1.4}Ga films  

SciTech Connect (OSTI)

Mn{sub 1.4}Ga films with high perpendicular magnetic anisotropy and high crystalline quality were grown on MgO substrates with Cr buffer layer using molecular beam epitaxy. The crystalline structure and the surface morphology of the films have been systematically investigated as functions of in-situ annealing temperature (T{sub a}) and film thickness. It is found that the magnetic properties can be largely tuned by adjusting T{sub a}. As T{sub a} increases, both saturation magnetization (M{sub s}) and uniaxial perpendicular magnetic anisotropy constant (K{sub u}) increase to the maximum values of 612?emu/cc and 18?Merg/cc at 300?°C, respectively, and then decrease. The morphology also changes with T{sub a}, showing a minimum roughness of 2.2?Å at T{sub a}?=?450?°C. On the other hand, as the thickness increases, M{sub s} and K{sub u} increase while coercivity decreases, which indicates there is a magnetic dead layer with a thickness of about 1.5?nm at the interfaces. The detailed examination on the surface morphology of the films with various thicknesses shows a complicated film growth process, which can be understood from the relaxation mechanism of the interfacial strain.

Zheng, Y. H., E-mail: elezheng@nus.edu.sg; Lu, H.; Teo, K. L. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Han, G. C. [Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore)

2014-01-28T23:59:59.000Z

69

Georgia Underground Gas Storage Act of 1972 (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Underground Gas Storage Act, which permits the building of reserves for withdrawal in periods of peak demand, was created to promote the economic development of the State of Georgia and...

70

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Compliance Reports For the Year Ended June 30, 2011 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Table of Contents Page Financial Statements of Georgia Research Foundation, Inc. Athens, Georgia Compliance We have audited the University of Georgia

Hall, Daniel

71

Georgia Comprehensive Solid Waste Management Act of 1990 (Georgia)  

Broader source: Energy.gov [DOE]

The Georgia Comprehensive Solid Waste Management Act (SWMA) of 1990 was implemented in order to improve solid waste management procedures, permitting processes and management throughout the state. ...

72

Georgia Oil and Gas Deep Drilling act of 1975 (Georgia)  

Broader source: Energy.gov [DOE]

Georgia's Oil and Gas and Deep Drilling Act regulates oil and gas drilling activities to provide protection of underground freshwater supplies and certain "environmentally sensitive" areas. The...

73

University of Georgia 2020 Strategic Plan  

E-Print Network [OSTI]

......................................................................34 Appendix E. University of Georgia Funding Source Trend Summary..........................................35University of Georgia 2020 Strategic Plan Building on Excellence October 30, 2012 #12;Building...............................................................................................................................................1 The Mission of the University of Georgia

Arnold, Jonathan

74

Georgia Hazardous Waste Management Act  

Broader source: Energy.gov [DOE]

The Georgia Hazardous Waste Management Act (HWMA) describes a comprehensive, Statewide program to manage hazardous wastes through regulating hazardous waste generation, transportation, storage,...

75

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Compliance Reports For the Year Ended June 30, 2010 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Table of Contents Page Financial Statements Foundation, Inc. Athens, Georgia Compliance We have audited the University of Georgia Research Foundation

Hall, Daniel

76

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Compliance Reports For the Year Ended June 30, 2009 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Table of Contents Page Financial Statements of Directors University of Georgia Research Foundation, Inc. Athens, Georgia Compliance We have audited

Hall, Daniel

77

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Financial Statements for the year ended June 30, 2010 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Contents Page Report of Independent Auditors 2 of Georgia Research Foundation, Inc. Athens, Georgia We have audited the accompanying statement of net assets

Hall, Daniel

78

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Financial Statements for the year ended June 30, 2011 #12;2 UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Contents Page Report of Independent Auditors of Directors University of Georgia Research Foundation, Inc. Athens, Georgia We have audited the accompanying

Arnold, Jonathan

79

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Compliance Reports For the Year Ended June 30, 2012 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Table of Contents Page Financial Statements Circular A-133 To the Board of Directors University of Georgia Research Foundation, Inc. Athens, Georgia

Hall, Daniel

80

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Financial Statements for the year ended June 30, 2012 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Contents 2 Page Report of Independent Auditors of Directors University of Georgia Research Foundation, Inc. Athens, Georgia We have audited the accompanying

Arnold, Jonathan

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

2014 Race to Zero Student Design Competition: Georgia Institute...  

Broader source: Energy.gov (indexed) [DOE]

Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia...

82

GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges  

E-Print Network [OSTI]

, Georgia State University, Atlanta, Georgia 30303 S. G. Matsik NDP Optronics LLC, Mableton, Georgia 30126 A

Perera, A. G. Unil

83

Georgia Cities Foundation- Green Communities Revolving Loan Fund (Georgia)  

Broader source: Energy.gov [DOE]

The Green Communities Fund is a revolving loan fund providing low-interest loans to businesses located within the city limits of any city in Georgia. Loans are available for existing as well as new...

84

Georgia Interfaith Power and Light- Energy Improvement Grants (Georgia)  

Broader source: Energy.gov [DOE]

Georgia Interfaith Power and Light (GIPL) offers grants of up to $10,000 to congregations or faith-based communities, including faith-based schools. Grant funds may be used for energy conservation...

85

High strain in polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys under overlapped static and oscillating magnetic fields  

SciTech Connect (OSTI)

Martensitic polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys, with a stacking period of 14 atomic planes at room temperature, were innovatively processed by combining high-energy ball milling and powder metallurgy. Bulk samples were mechanically coupled to a piezoelectric material in a parallel configuration, and the mechanical deformation of the studied system due to the twin's variant motion was investigated under overlapped static and oscillating magnetic fields. A reversible and high mechanical deformation is observed when the frequency of the oscillating magnetic field is tuned with the natural vibration frequency of this system. In this condition, a linear deformation as a function of the static magnetic field amplitude occurs in the ±4 kOe range, and a mechanical deformation of 2% at 10 kOe is observed.

Montanher, D. Z.; Pereira, J. R. D.; Cótica, L. F.; Santos, I. A. [Department of Physics, State University of Maringá, Av. Colombo 5790, Maringá - PR 87020-900 (Brazil); Gotardo, R. A. M. [Technological Federal University of Paraná, Av. Alberto Carazzai 1640, Cornélio Procópio - PR 86300-000 (Brazil); Viana, D. S. F.; Garcia, D.; Eiras, J. A. [Department of Physics, Federal University of São Carlos, Rod. Washington Luiz, Km 235, São Carlos - SP 13565-905 (Brazil)

2014-09-21T23:59:59.000Z

86

Marketers' Certificate of Authority (Georgia)  

Broader source: Energy.gov [DOE]

The Marketers' Certificate of Authority is mandated by the Georgia Public Service Commission (PSC), and is a part of the Natural Gas Competition and Reregulation Act. It requires that any company...

87

Georgia politics, 1732-1775  

E-Print Network [OSTI]

1733 law forbade the "Visit, frequent haunt, Trade to Traffick or Barter" with the Indians of Georgia unless duly licensed by the Georgia covernment. Prescribed punishment for violators of the law was a one hundred pounds sterling fine. Goods... perfected his chinaware for sale. Everyone, including Stephens, wished him well in his new production, if for no other reason than it would be of benefit to the prosperity of the struggling colony. Writing to the Trustees, however, Stephens ex- pressed...

Dennis, Joseph Lloyd

1967-01-01T23:59:59.000Z

88

Georgia Green Loans Save and Sustain Program  

Broader source: Energy.gov [DOE]

Georgia Green Loans, a non-profit microlending agency, offers funding to "green" businesses using funding from a Georgia Environmental Finance Authority (GEFA) grant. The GEFA grant is based on...

89

BIOLOGY GRADUATE STUDENT SOURCEBOOK GEORGIA SOUTHERN UNIVERSITY  

E-Print Network [OSTI]

1 BIOLOGY GRADUATE STUDENT SOURCEBOOK GEORGIA SOUTHERN UNIVERSITY GENERAL TABLE OF CONTENTS Chapter 1: Introduction to the Biology Department.............................................5 Chapter 2 #12;2 BIOLOGY GRADUATE STUDENT SOURCEBOOK GEORGIA SOUTHERN UNIVERSITY DETAILED TABLE OF CONTENTS

Hutcheon, James M.

90

Georgia Water Resources Institute Annual Technical Report  

E-Print Network [OSTI]

dissemination, and works collaboratively with various local, state, and federal agencies. These include #35334). (5) Tidal Streams: A Renewable Energy Source for Georgia , Kevin Haas, Georgia Institute, environmental organizations, lake associations, California Energy Commission, California Department of Water

91

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. COMPLIANCE REPORTS For the Year Ended June 30, 2013 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. TABLE OF CONTENTS Financial Statements Foundation, Inc. Athens, Georgia Report on Compliance for Each Major Federal Program We have audited

Arnold, Jonathan

92

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.  

E-Print Network [OSTI]

UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Financial Statements for the year ended June 30, 2009 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Contents Page Report of Independent Auditors 2 Standards 45 #12;Report of Independent Auditors Board of Directors University of Georgia Research Foundation

Hall, Daniel

93

Georgia gulf widens the loop  

SciTech Connect (OSTI)

In describing Georgia Gulf's experience with Responsible Care, president and CEO Jerry Satrum turns first to the pollution prevention code. Noting that the $838-million/year commodities and vinyl resins producer is not on the list of companies with the highest reportable emissions, Satrum says that Georgia Gulf has, nonetheless, reduced emissions from 4.5 million tons in 1987 to 1 million tons. The waste minimization element of pollution prevention has also had a profound effect on a compelling challenge to the company - getting its smaller operations into the loop on Responsible Care. It also brings to bear the product stewardship code - waste and materials management programs at Georgia Gulf's three vinyl compounding operations address waste issues for suppliers and customers.

Mullin, R.

1992-12-09T23:59:59.000Z

94

Terahertz absorption in AlGaAs films and detection using heterojunctions  

E-Print Network [OSTI]

a Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA b NDP Optronics, LLC-mail address: uperera@gsu.edu (A.G.U. Perera). 1 Also at NDP Optronics LLC. Infrared Physics & Technology 47

Perera, A. G. Unil

95

Georgia Southern University Information Technology  

E-Print Network [OSTI]

Georgia Southern University Information Technology Organization Chart 2013-2014 FINAL: September 18, 2013 R\\Work\\Common:\\OrgCharts\\Rev2014\\ Information Technology \\CIO Produced: Strategic Research of the groups of units reporting there. President Vice President for Information Technology and Chief

Hutcheon, James M.

96

Georgia Tech Vehicle Acquisition and  

E-Print Network [OSTI]

1 2012 Georgia Tech 10/10/2012 Vehicle Acquisition and Disposition Manual #12;2 Vehicle Procedures Regardless of value, all vehicles should be included in this process. Acquisition of a Vehicle 1. Contact Fleet Coordinator to guide the departments in the purchasing process for all vehicles. 2. Fill out

97

Livestock & Poultry --The Largest Segment of Georgia Agriculture  

E-Print Network [OSTI]

Crops* 40% Poultry 52% Livestock & Dairy 8% Poultry -- The Largest Segment of Georgia Agriculture Percent Total by Commodity Prepared by: Georgia Poultry Federation Source: University of Georgia, 2010 Pounds Produced: 1970 ­ 2011 Prepared by: Georgia Poultry Federation From: Georgia Agricultural

Navara, Kristen

98

Georgia Biofuel Directory A directory of Georgia industries that use biofuels.  

E-Print Network [OSTI]

Georgia Biofuel Directory · A directory of Georgia industries that use biofuels. · Completed in May _________________________________________________________________ 3 Biofuels_____________________________________________________________________ 4 Biofuel Use in Georgia that Burn Self-Generated Biofuels as of May 2003__ 4 Chart 1.0 Biofuel Use from Contacted

99

Petroleum Pipeline Eminent Domain Permit Procedures (Georgia)  

Broader source: Energy.gov [DOE]

The Petroleum Pipeline Eminent Domain Permit Procedures serve to protect Georgia's natural and environmental resources by requiring permits be issued by the Director of the Environmental Protection...

100

Georgia Power- Commercial Energy Efficiency Program  

Broader source: Energy.gov [DOE]

Georgia Power offers rebates to business customers who pay taxes and non-tax paying commercial customers. Incentives are available for lighting, HVAC, food service equipment, refrigeration...

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Renewable and Non-Renewable Resources Tariff RNR-7 (Georgia)  

Broader source: Energy.gov [DOE]

The Renewable and Non-Renewable Resource tariff is authorized by the Georgia Public Service Commission (PSC), which requires that the investor owned utility, Georgia Power Company, purchase...

102

Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...  

Energy Savers [EERE]

Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee Laboratory to Highlight Administration Support for Nuclear Energy Energy Secretary to Visit Georgia Nuclear...

103

Sec. Moniz to Georgia, Energy Department Scheduled to Close on...  

Energy Savers [EERE]

to Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close...

104

Georgia Water Resources Institute Annual Technical Report  

E-Print Network [OSTI]

) INFORM: Integrated Forecast and Reservoir Management System for Northern California, Aris Georgakakos PI Water Resources Institute GWRI mission is to help improve water resources management in Georgia, the US planning and management framework for Georgia. The GWRI planning tools are used to (i) determine flow

105

Articulated Swimming Creatures Georgia Institute of Technology  

E-Print Network [OSTI]

to swim straight and stay within a given energy budget. Our creatures can perform path following by firstArticulated Swimming Creatures Jie Tan Georgia Institute of Technology Yuting Gu Greg Turk Georgia to creating realistic swimming be- havior for a given articulated creature body. The two main com- ponents

Turk, Greg

106

Recovery Act State Memos Georgia  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L dDepartment ofList?Department09 SectionGeorgia For questions about

107

Synthesis and properties of green phosphor SrGa2S4:Eu2 emission displays by an environmentally clean technique  

E-Print Network [OSTI]

by an environmentally clean technique Y.D. Jianga , G. Villalobosa , J.C. Souriaua , H. Parisa , C.J. Summersa , Z.L. Wangb,* a Phosphor Technology Center of Excellence, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA b School of Materials Science and Engineering, Georgia

Wang, Zhong L.

108

Capacitance hysteresis in GaN/AlGaN heterostructures L. E. Byrum,1  

E-Print Network [OSTI]

Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA 2 NDP Optronics

Matsik, Steven G.

109

Maintenance expo................... 3 Georgia visitors....................... 3  

E-Print Network [OSTI]

Inside · Maintenance expo................... 3 · Georgia visitors....................... 3 · Fluid Power Center ................ 4 · CTS services Web page .......... 4 A monthly report on transportation transformation of nation's transportation policy The results of a 13-month study led by David Kittelson

Minnesota, University of

110

Central Georgia EMC- Photovoltaic Rebate Program  

Broader source: Energy.gov [DOE]

In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

111

Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors  

E-Print Network [OSTI]

, Georgia State University, Atlanta, Georgia 30303, USA; bNDP Optronics LLC, Mableton, Georgia 30126, USA; c

Dietz, Nikolaus

112

E-Print Network 3.0 - atlanta georgia metropolitan Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: University; Atlanta, Georgia September 1996 - Assistant Professor of Political Science Emory University... ; Atlanta, Georgia September 1993 - August 1996 On...

113

NOTICE OF FACULTY VACANCY IN ART EDUCATION The Lamar Dodd School of Art at The University of Georgia invites applications for the  

E-Print Network [OSTI]

NOTICE OF FACULTY VACANCY IN ART EDUCATION The Lamar Dodd School of Art at The University Education Search Committee Lamar Dodd School of Art The University of Georgia 270 River Rd. Athens, Ga in regard to both outdoor and urban activities (www.exploregeorgia.org). The Lamar Dodd School of Art

Arnold, Jonathan

114

atlanta georgia usa: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

values SECURING AMERICA'S FUTURE 12;0 1Georgia Tech Research Institute Annual Report Bennett, Gisele 9 School of Biology Atlanta, Georgia 30332-0230 USA Biology and Medicine...

115

The University of Georgia Center for Agribusiness and Economic Development  

E-Print Network [OSTI]

and Environmental Sciences An Evaluation of Direct and Indirect Economic Losses Incurred by Georgia FruitThe University of Georgia Center for Agribusiness and Economic Development College of Agricultural ............................................................................................................................................................ 3 Economic Consequences

Scott, Robert A.

116

Sensible Solar Fueling Energy Revolution in Georgia | Department...  

Broader source: Energy.gov (indexed) [DOE]

Sensible Solar Fueling Energy Revolution in Georgia Sensible Solar Fueling Energy Revolution in Georgia May 14, 2010 - 3:35pm Addthis Joshua DeLung During his recent commencement...

117

GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY  

E-Print Network [OSTI]

and safety hazards, and encourage the reporting of hazards and safety-related incidents; work cooperativelyGEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY Ratified by the Institute Council on Environmental Health and Safety August 2008 POLICY Georgia Institute of Technology (Georgia

Das, Suman

118

Comparison of Georgia and US Per Capita Fruit, Vegetable, Livestock, and Poultry Consumption, 2011 Estimated 2011 Georgia  

E-Print Network [OSTI]

Comparison of Georgia and US Per Capita Fruit, Vegetable, Livestock, and Poultry Consumption, 2011 Capita) Data System 4 Value= Per capita consumption (column 3) multiplied by Georgia Population (9 Estimated 2011 Georgia Population (9,687,653)1 2011 Farm Gate Production (lbs)2 2010 Per Capita US

Scott, Robert A.

119

arXiv:1002.0800v1[astro-ph.GA]3Feb2010 Mon. Not. R. Astron. Soc. 000, 000000 (0000) Printed 3 February 2010 (MN LATEX style file v2.2)  

E-Print Network [OSTI]

February 2010 (MN LATEX style file v2.2) High resolution X-ray spectroscopy and imaging of Mrk 573 Stefano Astronomico di Roma (INAF), Via Frascati 33, I-00040 Monte Porzio Catone, Italy 3 February 2010 ABSTRACT We et al. 2003; Bianchi et al. 2006). Since the NLR is also believed to be #12;2 Stefano Bianchi, et al

Evans, Dan

120

arXiv:1201.0642v1[astro-ph.GA]3Jan2012 Mon. Not. R. Astron. Soc. 000, 000000 (0000) Printed 4 January 2012 (MN LATEX style file v2.2)  

E-Print Network [OSTI]

January 2012 (MN LATEX style file v2.2) Stochastic grain heating and mid-infrared emission in protostellar and compared with observations of a representative infrared dark cloud core. We show that stochastic heating heating of small grains is often mentioned as a primary cause of large in- frared (IR) fluxes from star

Henning, Thomas

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Bulk modulus and specific heat of B-site doped (La{sub 0.3}Pr{sub 0.7}){sub 0.65}Ca{sub 0.35}Mn{sub 1?x}B{sub x}O{sub 3} (B=Fe, Cr, Ru, Al, Ga)  

SciTech Connect (OSTI)

Specific heat (C{sub p}) thermal expansion (?) and Bulk modulus (B{sub T}) of lightly doped Rare Earth manganites (La{sub 0.3}Pr{sub 0.7}){sub 0.65}Ca{sub 0.35}Mn{sub 1?x}B{sub x}O{sub 3} (B{sup 3+}?=?Fe{sup 3+},Cr{sup 3+},Ga{sup 3+},Al{sup 3+},Ru4+); (0.3Mn{sub 0.97}Fe{sub 0.03}O{sub 3} as a function of temperature (10K?T? 200K) is found to be in agreement with the published data. The trend of variation of Debye temperature with B-site cationic radius is predicted probably for the first time for the B-site doped rare earth manganites.

Srivastava, Archana, E-mail: archanasaran01@gmail.com [Department of Physics, Sri Sathya Sai College for Women, Bhopal-462024 (India); Thakur, Rasna; Gaur, N. K. [Department of Physics, Barkatullah University, Bhopal-462026 (India)

2014-04-24T23:59:59.000Z

122

Georgia Power- Residential Solar and Heat Pump Water Heater Rebate (Georgia)  

Broader source: Energy.gov [DOE]

Georgia Power customers may be eligible for rebates up to $250 each toward the installation costs of a 50 gallon or greater solar water heater or heat pump water heater. The solar water heater or...

123

Georgia Southern University Business and Finance  

E-Print Network [OSTI]

Georgia Southern University Business and Finance Organization Chart 2013-2014 FINAL: September 18, 2013 R:\\Work\\Common\\Org Charts\\Rev2014\\ Business & Finance Produced: Strategic Research & Analysis/KBM President Vice President for Business and Finance Associate Vice President for Finance Associate Vice

Hutcheon, James M.

124

The University of Georgia Teaching Academy  

E-Print Network [OSTI]

The University of Georgia Teaching Academy Mission Statement The mission of the Academy is to promote and celebrate excellence in teaching and to foster learning through inquiry. Goals The Academy Engineering David S. Williams, Honors Program Teaching Academy Induction Dinner and Ceremony Membership Class

Arnold, Jonathan

125

The University of Georgia Senior Vice President  

E-Print Network [OSTI]

directly to the Senior Vice President. In Summer 2011--in response to the recent development to the University of Georgia). These factors included, among others: decreasing state support; increased demands historic campus; and hiring, retention, compression and morale issues compounded by the inability

Arnold, Jonathan

126

2013 GEORGIA PEST MANAGEMENT HANDBOOK Commercial Edition  

E-Print Network [OSTI]

Pathology The University of Georgia Cooperative Extension College of Agricultural and Environmental Sciences, application, and safe use of pest control chemicals. The Handbook has recommendations for pest control information on control of insects, plant diseases, and weeds is available in bulletins and circulars published

Arnold, Jonathan

127

Georgia Water Resources Institute Annual Technical Report  

E-Print Network [OSTI]

the sponsorship of the US EPA, GWRI performed technical analysis of a draft ACT compact. Assessment results were of Engineers, and Southeastern Power Administration) and the ACT-ACF Federal Commissioner. Assessment resultsGeorgia Water Resources Institute Annual Technical Report FY 2000 Introduction In Fiscal Year 2000

128

IEEE Energy2030 Atlanta, Georgia, USA  

E-Print Network [OSTI]

(IPS), and can consist of loads, energy sources, and energy storage. The desired result of the proposed architecture is to produce a grid network designed for distributed renewable energy, prevalent energy storageIEEE Energy2030 Atlanta, Georgia, USA 17-18 November 2008 An Architecture for Local Energy

Ratnasamy, Sylvia

129

EA-1963: Elba Liquefaction Project, Savannah, Georgia  

Broader source: Energy.gov [DOE]

The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERC’s eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

130

Georgia Institute of Technology Fire Watch Procedures  

E-Print Network [OSTI]

-385-1000) Area II (404-385-2000) Area III (404-385-3000) Area IV (404-385-4000) Area V (404-385-5000) II. Fire Marshal 404-894-2990 2. Georgia Tech Police Department 404-894-2500 3. Facilities-Area 1 (404 the fire watch is in effect. 2. Patrol the entire area affected by the service outage every 30 minutes

131

Alternative Fuels Data Center: Georgia Information  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data Center Home Page onAlternativeConnecticutEthanolNatural GasFloridaGeorgia

132

Central Georgia EMC- Residential Energy Efficiency Rebate Program  

Broader source: Energy.gov [DOE]

Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes. This year,...

133

Seth Marder Title: Regent's Professor, Georgia Power Chair in Energy Efficiency  

E-Print Network [OSTI]

Seth Marder Title: Regent's Professor, Georgia Power Chair in Energy Efficiency University's Professor, the Georgia Power Chair of Energy Efficiency, and Professor of Chemistry and Materials Science

Garmestani, Hamid

134

The Gerontology Institute at Georgia State University invites applications for  

E-Print Network [OSTI]

to external funding. Georgia State University is the Southeast's leading urban research institution. More thanThe Gerontology Institute at Georgia State University invites applications for a tenure. This position is affiliated with the University's Partnership in Urban Health Research (http

Arnold, Jonathan

135

URBAN/INDUSTRIAL LAND PRIVATIZATION The Republic of Georgia  

E-Print Network [OSTI]

reviewed overall market reform prospects in the Republic of Georgia. The findings indicate that Georgia's market reform lags behind several other New Independent State (NIS) countries. This is largely due' support for market reform initiatives. With the ethnic conflict under control, the USAID assessment team

Onsrud, Harlan J.

136

Water Management Laws in Georgia Ciannat M. Howett  

E-Print Network [OSTI]

for the Northern District of Georgia (see State of Georgia v. United States Army Corps of Engineers et al., 2.01-CV Sharing Agreements/Interstate Compacts: The Example of the Tri-state Water Negotiations As water resources, states across the nation ­ even on the relatively water-rich east coast ­ have been focusing more

Rosemond, Amy Daum

137

Environmental radionuclide distribution in Georgia after the Chernobyl accident  

SciTech Connect (OSTI)

Atmospheric Chernobyl-released radioactivity, assessed at about 2 x 10{sup 18} Bq, caused global environmental contamination. Contaminated air masses appeared in the Transcaucasian region in early May, 1986. Rains that month promoted intense radionuclide deposition all over Georgia. The contamination level of western Georgia considerably exceeded the contamination level of eastern Georgia. The Black Sea coast of Georgia suffered from the Chernobyl accident as much as did strongly contaminated areas of the Ukraine and Belarus`. Unfortunately, governmental decrees on countermeasures against the consequences of the Chernobyl accident at that time did not even refer to the coast of Georgia. The authors observed the first increase in radioactivity background in rainfall samples collected on May 2, 1986, in Tbilisi. {gamma}-Spectrometric measurements of aerosol filters, vegetation, food stuffs, and other objects, in addition to rainfall, persistently confirmed the occurrence of short-lived radionuclides, including {sup 131}I. At first, this fact seemed unbelievable, because the Chernobyl accident had occurred only 4-5 days earlier and far from Georgia. However, these arguments proved to be faulty. Soon, environmental monitoring of radiation in Georgia became urgent. Environmental radionuclide distribution in Georgia shortly after the Chernobyl accident, as well as the methods of analysis, are reported in this paper.

Mosulishvili, L.M.; Shoniya, N.I.; Katamadze, N.M. [Institute of Physics, Tbilisi, Georgia (Russian Federation)] [and others

1994-01-01T23:59:59.000Z

138

Categorical Exclusion Determinations: Georgia | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-Up fromDepartmentTie Ltd:JuneNovember 26, 20149 CategoricalColoradoof EnergyGeorgia

139

Alamo, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectricEnergy InformationTuri BiomassWheeler County, Georgia. It falls under

140

GEORGIA GENERAL ASSEMBLY 4/2010  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr Flickr Editor's note:ComputingFusionSan Ramon,GlobalU.S.GEORGIA

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Adel, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 East 300 SouthWaterBrasil Jump to:Iowa ASHRAEAddis, LA) JumpAddress (SmartGeorgia:

142

Americus, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 East 300Algoil JumpAltergy SystemsAmerican EnergyAmericus, Georgia: Energy Resources

143

Chamblee, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Information on PV2009 |Chamblee, Georgia: Energy Resources Jump to:

144

Investigations of the electronic and magnetic structures of Co{sub 2}YGa (Y=Cr, Mn) Heusler alloys and their (100) surfaces  

SciTech Connect (OSTI)

Density functional theory calculations are performed to investigate the structural, electronic, and magnetic properties of bulk structures of Co{sub 2}YGa (Y?=?Cr, Mn) Heusler alloys and the surfaces along the (100) orientation. The bulk structures of both alloys show a ferromagnetic behavior with total magnetic moments of 3.03?{sub B} and 4.09?{sub B} and high spin polarizations of 99% and 67% for Co{sub 2}CrGa and Co{sub 2}MnGa, respectively. The surfaces are found to exhibit corrugations due to different relaxations of the surface atoms. For the case of Co{sub 2}CrGa, two surfaces preserve the half metallicity, namely those with Cr-Ga and Ga– terminations with high spin polarizations above 90%, whereas it dropped to about 50% for the other surfaces. However, the spin polarizations of Co-Co and Mn-Ga terminated surfaces remain close to that of bulk Co{sub 2}MnGa alloy, whereas it is suppressed down to 17% for Co– termination. The highest local magnetic moments are found to be 3.26??{sub B} and 4.11??{sub B} for Cr and Mn surface atoms in Cr-Ga and Mn– terminated surfaces, respectively.

Hamad, Bothina, E-mail: b.hamad@ju.edu.jo [Physics Department, The University of Jordan, Amman-11942 (Jordan)

2014-03-21T23:59:59.000Z

145

U.S. Hydropower Resource Assessment - Georgia  

SciTech Connect (OSTI)

The U.S. Department of Energy is developing an estimate of the undeveloped hydropower potential in the United States. For this purpose, the Idaho National Engineering and Environmental Laboratory developed a computer model called Hydropower Evaluation Software (HES). HES measures the undeveloped hydropower resources available in the United States, using uniform criteria for measurement. The software was developed and tested using hydropower information and data provided by the Southwestern Power Administration. It is a menu-driven program that allows the personal computer user to assign environmental attributes to potential hydropower sites, calculate development suitability factors for each site based on the environmental attributes present, and generate reports based on these suitability factors. This report describes the resource assessment results for the State of Georgia.

A. M. Conner; B. N. Rinehart; J. E. Francfort

1998-10-01T23:59:59.000Z

146

Diverse Power- Energy Efficient Existing Homes Rebate Program (Georgia)  

Broader source: Energy.gov [DOE]

Diverse Power is a member-owned electric cooperative that provides electric service to customers in Troup, Harris, Heard, Meriwether, Muscogee and Coweta counties in Georgia. Diverse Power offers a...

147

Georgia: Data Center and Historic Municipal Building Go Green...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Municipal Building Go Green Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can consume 100 to 200 times more...

148

Jackson EMC- Residential Energy Efficiency Rebate Program (Georgia)  

Broader source: Energy.gov [DOE]

Jackson Electric Membership Corporation (EMC) is an electric cooperative that serves 194,000 customers in 10 counties in northeast Georgia. To encourage its residential customers to adopt energy...

149

EECBG Success Story: Georgia County Turning Industrial and Farm...  

Broader source: Energy.gov (indexed) [DOE]

Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook EECBG Success Story: Atlanta Suburb Greases the Path to Savings...

150

EcoCAR Challenge Georgia Institute of Technology  

E-Print Network [OSTI]

EcoCAR Challenge Georgia Institute of Technology Outreach Report Date: 11/09/2010 #12;11/9/2010 2 plan on leveraging our media contacts, GM sponsors, and Atlanta Clean Cities sponsors to potentially

Houston, Paul L.

151

City of Ellaville, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company) JumpDoerun, GeorgiaElectra Place:Ellaville, Georgia

152

(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties  

SciTech Connect (OSTI)

Self-assembled (In,Mn)As quantum dots are synthesized by molecular-beam epitaxy on GaAs (001) substrates. The experimental results obtained by transmission electron microscopy show that doping of the central part of the quantum dots with Mn does not bring about the formation of structural defects. The optical properties of the samples, including those in external magnetic fields, are studied.

Bouravleuv, A. D., E-mail: bour@mail.ioffe.ru; Nevedomskii, V. N. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Ubyivovk, E. V. [St. Petersburg State University (Russian Federation)] [St. Petersburg State University (Russian Federation); Sapega, V. F. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Khrebtov, A. I. [St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation)] [St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation); Samsonenko, Yu. B.; Cirlin, G. E.; Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-08-15T23:59:59.000Z

153

Connect, Collaborate, Commercialize There are many different opportunities for engagement and technology transfer at Georgia  

E-Print Network [OSTI]

and technology transfer at Georgia Tech. Working together we can tailor a relationship unique to your company

Garmestani, Hamid

154

UGA ID Number Last Name First MI Academic Term THE UNIVERSITY OF GEORGIA  

E-Print Network [OSTI]

UGA ID Number Last Name First MI Academic Term THE UNIVERSITY OF GEORGIA APPLICATION TO MAKE LATE's Office UGA ID Number Last Name First MI Academic Term THE UNIVERSITY OF GEORGIA APPLICATION TO MAKE LATE's Office UGA ID Number Last Name First MI Academic Term THE UNIVERSITY OF GEORGIA APPLICATION TO MAKE LATE

Arnold, Jonathan

155

A Spatial Simulation Model of Land Use Changes in a Piedmont County in Georgia  

E-Print Network [OSTI]

A Spatial Simulation Model of Land Use Changes in a Piedmont County in Georgia Monica Goigel Turner* Institute of Ecology University of Georgia Athens, Georgia ABSTRACT A spatial simulation model was developed be explicitly included in simulation models to gain an understanding of landscape level phenomena, and at least

Turner, Monica G.

156

DYNAMICAL PROPERTIES OF Ni 2 MnGa DETERMINED FROM  

E-Print Network [OSTI]

, Germany b Physics Department, Chelyabinsk State University, 454021 Chelyabinsk, Russia (Phase Transitions

Entel, P.

157

A GINZBURG-LANDAU THEORY FOR Ni-Mn-Ga  

E-Print Network [OSTI]

Tieftemperaturphysik, Gerhard-Mercator-Universit¨at, 47048 Duisburg, Germany b Physics Department, Chelyabinsk State University, 454021 Chelyabinsk, Russia (Received ...) Abstract We present an effective Ginzburg-Landau theory

Entel, P.

158

Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors  

E-Print Network [OSTI]

- ?As ferromagnetic semiconductors Furdyna,4,3 W. A. Atkinson,5 and A. H. MacDonald3 y, College Station, Texas 77843-4242, USA a? 10, 162 53 Praha 6, Czech Republic at Austin, Austin, Texas 78712-0264, USA Dame, Notre Dame, Indiana 46556, USA y...-quality samples, due to the coupling of the d-level local moments to 5 Donald, Phys. Rev. B 66, 012402 ~2002!; K.W. Edmonds, K.Y. Wang, R.P. Campion, A.C. Neumann, C.T. Foxon, B.L. Gal- lagher, and P.C. Main, Appl. Phys. Lett. 81, 3010 ~2002!. 8 and A. Fert...

Sinova, Jairo; Jungwirth, T.; Liu, X.; Sasaki, Y.; Furdyna, JK; Atkinson, WA; MacDonald, AH.

2004-01-01T23:59:59.000Z

159

E-Print Network 3.0 - atlanta ga usa Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Physics and Astronomy, Georgia State University, Atlanta, Georgia... 30303, USA 3 NDP Optronics, Mableton, Georgia 30126, USA *Corresponding author: wzshen... -band imaging device,...

160

Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 EastMaine: Energy Resources JumpAspen Aerogels05. It is640623°Atlanta, GA) Jump to:

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Advance View Proofs Thermodynamic Description of the Mg-Mn, Al-Mn and Mg-Al-Mn Systems  

E-Print Network [OSTI]

Advance View Proofs Thermodynamic Description of the Mg-Mn, Al-Mn and Mg-Al-Mn Systems Using-consistent thermodynamic model of the Mg-Mn, Al-Mn and Mg-Al-Mn systems has been developed. The major difference between work on the Al-Mn system that uses the same model for the liquid phase reveals that better agreement

Medraj, Mamoun

162

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

household (2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to...

163

Pulp and Paper Corrosion Symposium Georgia Tech Renewable Bioproducts Institute  

E-Print Network [OSTI]

1 Pulp and Paper Corrosion Symposium Georgia Tech Renewable Bioproducts Institute November 2014 Digester Corrosion Margaret Gorog Federal Way, WA 2 · Chips plus a mixture of white and black liquor · The pulp is then blown from the bottom of the vessel into a blow tank · Corrosion occurs during filling

Das, Suman

164

POLICY REGARDING SERVICE ANIMAL ACCESS TO UNIVERSITY OF GEORGIA FACILITIES,  

E-Print Network [OSTI]

POLICY REGARDING SERVICE ANIMAL ACCESS TO UNIVERSITY OF GEORGIA FACILITIES, PROGRAMS, SERVICES AND ACTIVITIES This policy ("Policy") is to implement federal and state laws regarding access for service animals, for purposes of this Policy, "Service Animals" are collectively defined to include those that are defined

Arnold, Jonathan

165

School of Earth and Atmospheric Sciences Georgia Institute of Technology  

E-Print Network [OSTI]

School of Earth and Atmospheric Sciences Georgia Institute of Technology Strategic Plan March 1 opportunities. Vision The vision of the School of Earth and Atmospheric Sciences is: To lead in innovative research and educate the future leaders in earth and atmospheric sciences for the 21st century, within

Weber, Rodney

166

Ambient habitat noise and vibration at the Georgia Aquarium  

E-Print Network [OSTI]

Ambient habitat noise and vibration at the Georgia Aquarium P. M. Scheifele Department significant levels of background noise due to pumps and motors. This noise, together with pool architecture to quantify the ambient noise levels in the water from machine vibration and from in-air performance speaker

Johnson, Michael T.

167

Georgia Institute of Technology For more information contact  

E-Print Network [OSTI]

, 2007) -- We feel it at the pump. Fuel prices are at record highs and so is the demand for alternative Biofuels, the Georgia Research Alliance and one of the U.S. Department of Energy's new BioEnergy Research in the United States, but concerns exist about the future price and availability of corn as a food crop if it

Nair, Sankar

168

Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value. (auth)

Jamer M.; Sterbinsky G.; Assaf, B.; Arena, D.; Heiman, D.

2014-12-07T23:59:59.000Z

169

North Druid Hills, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy ResourcesLoading map...(Utility Company) Jump to:City)Norristown,BraddockDruid Hills, Georgia: Energy

170

Gresham Park, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio:Greer County is a county in Oklahoma. Its FIPSGresham Park, Georgia:

171

Henry County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio:Greer CountyCorridorPartImages JumpHendryHenry County, Georgia

172

Middle Georgia El Member Corp | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating Solar Powerstories onFocus Area Energy Efficiency, RenewableMiddle Georgia El Member

173

Monroe County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 -Energieprojekte3 Climate Zone Subtype A. Places in Monroe County, Georgia Culloden,

174

Meriwether County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 -Energieprojekte GmbH Jump to: navigation, search Name: MeridianCounty, Georgia:

175

Georgia - Seds - U.S. Energy Information Administration (EIA)  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:SeadovCooperativeA2. World liquids consumptionEmail:PlantshortshortlongGeorgia - Seds -

176

Putnam County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: EnergyPotentialUrbanUtilityScalePVCapacityPulaski County, Kentucky:County, Georgia: Energy Resources Jump to:

177

Quitman County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: EnergyPotentialUrbanUtilityScalePVCapacityPulaski County, Kentucky:County, Georgia:Quay9159785°Quioque,

178

City of Acworth, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpenWendeGuoCatalystPathways CalculatorinAcworth, Georgia (Utility

179

City of Adel, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpenWendeGuoCatalystPathways CalculatorinAcworth, Georgia

180

City of Doerun, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company) JumpDoerun, Georgia (Utility Company) Jump to:

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

City of Fairburn, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company) JumpDoerun, GeorgiaElectraElsmore,

182

City of Griffin, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company)Galion, OhioInformation Cove, TexasGriffin, Georgia

183

City of Hogansville, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company)Galion,Harrisonville,HickmanHogansville, Georgia

184

City of Moultrie, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (UtilityHolyrood,Martinsville,Moultrie, Georgia (Utility Company) Jump

185

City of Washington, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhioOglesby,Sullivan, Missouri (UtilityUnionWahoo, NebraskaMinnesotaGeorgia

186

City of Quitman, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (UtilityGeorgiaArkansas References: EIA Form

187

E-Print Network 3.0 - airfield savannah georgia Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering Alliance Students Summary: You must be in good academic standing at Armstrong to cross-register at Georgia Tech Savannah (GTS... .gatech.educalendar-events...

188

E-Print Network 3.0 - area waynesboro georgia Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Wildlife Habitat Conservation Summary: landowners in priority areas, has increased. Cherokee Rock Village, Walker County, Georgia Nate... , and public access to recreation areas....

189

University of Georgia College of Agricultural and Environmental Sciences Alumni Association 2012 Nomination Form  

E-Print Network [OSTI]

University of Georgia College of Agricultural and Environmental Sciences Alumni Association 2012 in the College of Agricultural and Environmental Sciences Activity Center. To be displayed in an attractive

Arnold, Jonathan

190

adults georgia 2006-2007: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Technology, automatically supersede the contents of this manual. A GTA is a temporary Bennett, Gisele 3 Georgia Tech : Catalog 2006 2007 : Home 2006 -2007 General Catalog...

191

Coweta-Fayette EMC- Residential Solar Water Heater Rebate Program (Georgia)  

Broader source: Energy.gov [DOE]

Coweta-Fayette Electric Membership Corporation (EMC) provides electric and natural gas service to 58,000 customers in Georgia's Coweta, Fayette, Meriwether, Heard, Troop and Fulton counties.

192

Assistant Professor of Gerontology The Gerontology Institute at Georgia State University invites applications for a tenure-track assistant  

E-Print Network [OSTI]

lead to external funding. Georgia State University is the Southeast's leading urban researchAssistant Professor of Gerontology The Gerontology Institute at Georgia State University invites faculty representing numerous disciplines across the University. Further information about the Gerontology

Arnold, Jonathan

193

Case Study: Georgia-Pacific Reduces Outside Fuel Costs and Increases Process Efficiency with Insulation Upgrade Program  

E-Print Network [OSTI]

A Georgia-Pacific plywood plant located in Madison, Georgia recently decided to insulate their steam lines for energy conservation, improved process efficiency and personnel protection. The goal of the project was to eliminate dependency...

Jackson, D.

194

Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1  

E-Print Network [OSTI]

, USA 2 NDP Optronics LLC, Mableton, Georgia 30126, USA 3 School of Electrical and Computer Engineering

Dietz, Nikolaus

195

Archway Education Professional The University of Georgia is seeking a qualified candidate to serve as the Archway Education Professional in  

E-Print Network [OSTI]

Archway Education Professional The University of Georgia is seeking a qualified candidate to serve as the Archway Education Professional in Dalton-Whitfield County, Georgia. The Archway Partnership was initiated with the University of Georgia. The Archway Education Professional is a UGA Public Service (Public Service Assistant

Arnold, Jonathan

196

University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program  

E-Print Network [OSTI]

University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program Program Description As part of the University of Georgia (UGA) / University of Liverpool Partnership, we are providing for ongoing sponsored funding to continue the collaborations. Eligibility Criteria To be eligible

Arnold, Jonathan

197

POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition in Licensing  

E-Print Network [OSTI]

POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition the interests of the company over their responsibilities to UGARF and the University of Georgia. This Policy with this Policy. II. Policy In the course of intellectual property licensing, UGARF, through the work of TCO, may

Arnold, Jonathan

198

EcoCAR by Georgia Tech efficiency through design and innovation  

E-Print Network [OSTI]

engineering competition sponsored by the Department of Energy and General Motors EcoCAR by Georgia Tech engineering competition sponsored by the Department of Energy and General Motors #12;GT EcoCAR GOALS: Increase by the Department of Energy and General Motors EcoCAR by Georgia Tech efficiency through design and innovation

Houston, Paul L.

199

INTRODUCTION TO SMART GRID Weichao Wang (UNCC), Yi Pan (Georgia State),  

E-Print Network [OSTI]

INTRODUCTION TO SMART GRID Weichao Wang (UNCC), Yi Pan (Georgia State), Wenzhan Song (Georgia State) and Le Xie (Texas A&M) NSF SFS Project Team on "Integrated Learning Environment for Smart Grid Security" #12; Objective of National Power Grid Modernization Architecture of Smart Grid What is Smart Grid

Wang, Weichao

200

May 14-16, 2009 Young Harris College, Young Harris, Georgia  

E-Print Network [OSTI]

May 14-16, 2009 Young Harris College, Young Harris, Georgia Master Beekeeper levels: · Certified · Journeyman · Master · Master Craftsman Young Harris College and the University of Georgia are offering, candles, section comb honey, mead, and beekeeping gadgets. We urge students to participate

Delaplane, Keith S.

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Newton County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy ResourcesLoading map...(Utility Company) Jump to:City) Jump to:Newmarket, NewNewstead, NewGeorgia

202

Echols County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address:011-DNA Jump37. It is classified asThis articleEastborough,Eaton,Echols County, Georgia:

203

Upson County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov PtyInformation UC 19-6-401Upson County, Georgia: Energy Resources Jump to:

204

Washington County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov PtyInformationSEDS dataIndiana: EnergyWasco County,Washington County,Georgia:

205

Wayne County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov PtyInformationSEDSWawarsing, New York: Energy Resources JumpGeorgia: Energy

206

Butts County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin: EnergyBoston Areais aBurkittsville,Bushyhead,Butts County, Georgia: Energy

207

Georgia Recovery Act State Memo | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in3.pdf Flash2006-53.pdf0.pdfCost SavingsEnergyDepartment ofGeneralFutureElectricGeorgia

208

White County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:SeadovCooperative Jump to:Westview, Florida:WheatleyWheeler,Georgia: Energy Resources Jump

209

Wilkinson County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:SeadovCooperative Jump to:Westview,GeothermalHawaii:Sage grouseWilkinson County, Georgia:

210

Sandy Springs, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, searchVirginiaRooseveltVI SolarisSandusky County, Ohio: EnergySandyGeorgia:

211

DeKalb County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision has beenFfe2fb55-352f-473b-a2dd-50ae8b27f0a6 No revision has been approved forDayton is aCounty, Georgia:

212

Camden County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin: EnergyBoston Areais3:InformationCamden County, Georgia: Energy Resources

213

City of Camilla, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy InformationLake SouthChromaIowaCamilla, Georgia (Utility Company)

214

City of Cartersville, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy InformationLake SouthChromaIowaCamilla, Georgia (UtilityCartersville,

215

City of Mansfield, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (Utility Company)Livingston Place:Mansfield, Georgia (Utility

216

City of Monticello, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (UtilityGeorgia (Utility Company) Jump to: navigation, search

217

City of Palmetto, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (UtilityGeorgia (UtilityNewburgOrrville, OhioOxford,Palmetto

218

City of Thomaston, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy NebraskaStanhope, Iowa (Utility Company)Thomaston Place: Georgia

219

Clinch County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:EnergyWisconsin: Energy ResourcesInformation istypeClinch County, Georgia:

220

Talbot County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty LtdSteen,Ltd Jump to: navigation,Open EnergyFacilityTEPCounty, Georgia: Energy

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Tift County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty LtdSteen,Ltd Jump JumpAl., 1978) |Thrall,Tibagi EnergeticaTift County, Georgia:

222

Turner County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty LtdSteen,LtdInformationTulsa, Oklahoma:EnergyTurner County, Georgia: Energy

223

Georgia Regions | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched5 IndustrialIsadoreConnecticut Regions National Science2Gcreport BiologicalGeorgia

224

GaN/AlGaN ultraviolet/infrared dual-band detector G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, and A. G. U. Pereraa  

E-Print Network [OSTI]

, Atlanta, Georgia 30303 S. G. Matsik NDP Optronics, Mableton, Georgia 30126 A. Asghar and I. T. Ferguson

Perera, A. G. Unil

225

Ga nanoparticle-enhanced photoluminescence of GaAs  

SciTech Connect (OSTI)

We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-09-02T23:59:59.000Z

226

sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage  

SciTech Connect (OSTI)

This study focuses on evaluating the feasibility and suitability of using the Jurassic/Triassic (J/TR) sediments of the South Georgia Rift basin (SGR) for CO2 storage in southern South Carolina and southern Georgia The SGR basin in South Carolina (SC), prior to this project, was one of the least understood rift basin along the east coast of the U.S. In the SC part of the basin there was only one well (Norris Lightsey #1) the penetrated into J/TR. Because of the scarcity of data, a scaled approach used to evaluate the feasibility of storing CO2 in the SGR basin. In the SGR basin, 240 km (~149 mi) of 2-D seismic and 2.6 km2 3-D (1 mi2) seismic data was collected, process, and interpreted in SC. In southern Georgia 81.3 km (~50.5 mi) consisting of two 2-D seismic lines were acquired, process, and interpreted. Seismic analysis revealed that the SGR basin in SC has had a very complex structural history resulting the J/TR section being highly faulted. The seismic data is southern Georgia suggest SGR basin has not gone through a complex structural history as the study area in SC. The project drilled one characterization borehole (Rizer # 1) in SC. The Rizer #1 was drilled but due to geologic problems, the project team was only able to drill to 1890 meters (6200 feet) instead of the proposed final depth 2744 meters (9002 feet). The drilling goals outlined in the original scope of work were not met. The project was only able to obtain 18 meters (59 feet) of conventional core and 106 rotary sidewall cores. All the conventional core and sidewall cores were in sandstone. We were unable to core any potential igneous caprock. Petrographic analysis of the conventional core and sidewall cores determined that the average porosity of the sedimentary material was 3.4% and the average permeability was 0.065 millidarcy. Compaction and diagenetic studies of the samples determined there would not be any porosity or permeability at depth in SC. In Georgia there appears to be porosity in the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

Waddell, Michael

2014-09-30T23:59:59.000Z

227

Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism  

SciTech Connect (OSTI)

Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value. (auth)

Jamer M.; Sterbinsky G.; Assaf, B.; Arena, D.; Heiman, D.

2014-12-07T23:59:59.000Z

228

Structure and magnetic properties of rf thermally plasma synthesized Mn and MnZn ferrite nanoparticles  

E-Print Network [OSTI]

Structure and magnetic properties of rf thermally plasma synthesized Mn and Mn­Zn ferrite has previously been shown to be a viable route to producing nanocrystalline magnetite and Ni ferrite nanoparticles. In this work nanocrystalline powders of Mn and Mn­Zn ferrites have been synthesized using a 50 k

McHenry, Michael E.

229

AlGaN/GaN-based power semiconductor switches  

E-Print Network [OSTI]

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

230

Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia  

SciTech Connect (OSTI)

Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

2013-11-01T23:59:59.000Z

231

GEORGIA INSTITUTE OF TECHNOLOGY COLLEGE OF ENGINEERING 1 College of Engineering  

E-Print Network [OSTI]

Electrical and Computer Engineering Industrial and Systems Engineering Materials Science and Engineering and Biomolecular Engineering Civil and Environmental Engineering Electrical and Computer Engineering IndustrialGEORGIA INSTITUTE OF TECHNOLOGY · COLLEGE OF ENGINEERING 1 College of Engineering Aerospace

Li, Mo

232

SAVANNAH HARBOR EXPANSION PROJECT CHATHAM COUNTY, GEORGIA AND JASPER COUNTY, SOUTH CAROLINA  

E-Print Network [OSTI]

SAVANNAH HARBOR EXPANSION PROJECT CHATHAM COUNTY, GEORGIA AND JASPER COUNTY, SOUTH CAROLINA 22 (Kings Island Turning Basin at Stations 98+500 to 100+500) 5 feet deeper (to an authorized navigation #12

US Army Corps of Engineers

233

Energy Conservation Recommendations, Implementation Costs, and Projected Paybacks for Georgia's Targeted Schools and Hospitals Conservation Program  

E-Print Network [OSTI]

During the past year the Georgia Tech Research Institute performed technical assistance studies on over 100 school and hospital buildings under a program funded by the Governor's Office of Energy Resources. This program is known as the Targeted...

Brown, M. L.; Moore, D. M.

1988-01-01T23:59:59.000Z

234

Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report  

SciTech Connect (OSTI)

This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

SC Energy Office: Southern Alliance for Clean Energy

2013-02-12T23:59:59.000Z

235

An Evaluation of Georgia's Institutional Conservation Program Preliminary Report - June 1989  

E-Print Network [OSTI]

The Institutional Conservation Program (ICP) has been active in Georgia since 1980 and has distributed over $20 million in matching funds for conservation measures and energy studies. The purpose of the ICP is to reduce energy consumption in schools...

Brown, M. L.; Downing, C.

1989-01-01T23:59:59.000Z

236

Capacity and Energy Payments to Small Power Producers and Cogenerators Under PURPA Docket (Georgia)  

Broader source: Energy.gov [DOE]

Docket No. 4822 was enacted by the Georgia Public Service Commission in accordance with The Public Utility Regulatory Policies Act of 1978 (PURPA) that was enacted to promote conservation and to...

237

Sales Tax Exemption for Energy-Efficient Products (Sales Tax Holiday) (Georgia))  

Broader source: Energy.gov [DOE]

Georgia allows an annual state and local sales tax exemption on Energy Star products of $1,500 or less per product, purchased for non-commercial home or personal use.The 100% exemption from the...

238

EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia  

Broader source: Energy.gov [DOE]

This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

239

Georgia Champions Energy Efficiency Savings: Weatherization Assistance Close-Up Fact Sheet  

SciTech Connect (OSTI)

Georgia demonstrates its commitment to technology and efficiency through the Weatherization Program. Weatherization uses advanced technologies and techniques to reduce energy costs for low-income families by increasing the energy efficiency of their homes.

D& R International

2001-10-10T23:59:59.000Z

240

Computers and nautical archaeology: characterization of the C.S.S. Georgia wreck site  

E-Print Network [OSTI]

COMPUTERS AND NAUTICAL ARCHAEOLOGY: CHARACTERIZATION OF THE C. S. S. GEORGIA NRECK SITE A Thesis by JAMES GRAHAM BAKER Submitted to the Graduate College of Texas ASM University in partial fulfillment of the requirements for the degree... of MASTER OF ARTS December 19HZ Major Subject: Anthropology COMPUTERS IN NAUTICAL ARCHAEOLOGY: CHARACTERIZATION OF THE C. S. S, GEORGIA WRECK SITE A Thesis by JAMES GRAHAM BAKER Approved as to style and content by: Frederick H. van Doorninck, Jr...

Baker, James Graham

1982-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Role of Embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN X. Y. Cui,1  

E-Print Network [OSTI]

, typically 5 (20­30) times smaller for Cr-based (Mn-based) III-V DMS than the value expected, 3 B= Cr4 BRole of Embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN X. Y. Cui,1 J. E configurations coexist and the statistical distribution and associated magnetism will depend sensitively

Medvedeva, Julia E.

242

Georgia Institute of Technology chilled water system evaluation and master plan  

SciTech Connect (OSTI)

As the host of the Olympic Village for the 1996 Atlanta Olympics, Georgia Tech has experienced a surge in construction activities over the last three years. Over 1.3 million square feet of new buildings have been constructed on the Georgia Tech campus. This growth has placed a strain on the Georgia Tech community and challenged the facilities support staff charged with planning and organizing utility services. In concert with Olympic construction, utility planners have worked to ensure long term benefits for Georgia Tech facilities while meeting the short term requirements of the Olympic Games. The concentration of building construction in the northwest quadrant of the campus allowed planners to construct a satellite chilled water plant to serve the needs of this area and provide the opportunity to integrate this section of the campus with the main campus chilled water system. This assessment and master plan, funded in part by the US Department of Energy, has evaluated the chilled water infrastructure at Georgia Tech, identified ongoing problems and made recommendations for long term chilled water infrastructure development and efficiency improvements. The Georgia Tech office of Facilities and RDA Engineering, Inc. have worked together to assemble relevant information and prepare the recommendations contained in this document.

NONE

1996-05-15T23:59:59.000Z

243

Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment  

SciTech Connect (OSTI)

We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition, with a consequent suppression of thermal hysteresis without any significant perturbation on the other structural and magnetic properties. In particular, the irradiated film keeps the giant magnetocaloric effect at room temperature opening new perspective on magnetic refrigeration technology for everyday use.

Trassinelli, M., E-mail: martino.trassinelli@insp.jussieu.fr; Marangolo, M.; Eddrief, M.; Etgens, V. H.; Gafton, V.; Hidki, S.; Lacaze, E.; Lamour, E.; Prigent, C.; Rozet, J.-P.; Steydli, S.; Zheng, Y.; Vernhet, D. [CNRS, UMR 7588, Institut des NanoSciences de Paris (INSP), F-75005 Paris (France); Sorbonne Universités, UPMC Univ. Paris 06, UMR 7588, INSP, F-75005 Paris (France)

2014-02-24T23:59:59.000Z

244

Georgia Newspaper Coverage Discovering Conventional Practices of the 'Cherokee Question': Prelude to the Removal, 1828-1832.  

E-Print Network [OSTI]

??This thesis analyzes the specific journalistic conventional practices of newspapers in Georgia as they focused on the “Cherokee Question” in 1828-1832, the critical period during… (more)

Hobgood, Jr., James Hollister

2008-01-01T23:59:59.000Z

245

Lamar County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 - 429Lacey, Washington:Lakeville, MN) Jump to:Lamar County, Alabama Beaverton,Lamar

246

Laurens County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 - 429Lacey, Washington:Lakeville, MN)Lauderhill, Florida: EnergyLaurel isCounty,

247

Energy conserving site design case study: Shenandoah, Georgia. Final report  

SciTech Connect (OSTI)

The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

Not Available

1980-01-01T23:59:59.000Z

248

Coordinator of Operations The University of Georgia is seeking a qualified candidate to serve as the Coordinator of Operations with the  

E-Print Network [OSTI]

with the University of Georgia. The Archway Partnership has received funding from the Board of Regents to continueCoordinator of Operations The University of Georgia is seeking a qualified candidate to serve to bring the University of Georgia's expertise to communities and to facilitate community interaction

Arnold, Jonathan

249

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

to Georgia soils. Soil test phosphorous level by itself is not adequate to determine environmental risk by applying less manure, adding buffers or applying other management procedures. Sources of Risk and Transport and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2004 COMMERCIAL EGG TIP... GEORGIA'S PHOSPHOROUS INDEX

Navara, Kristen

250

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

to Georgia soils. Soil test phosphorous level by itself is not adequate to determine environmental risk by applying less litter, adding buffers or applying other management procedures. Sources of Risk and Transport and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2004 BROILER TIP... GEORGIA'S PHOSPHOROUS INDEX

Navara, Kristen

251

Investigation of the GaN-on-GaAs interface for vertical power device applications  

SciTech Connect (OSTI)

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07T23:59:59.000Z

252

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

253

The University of Georgia is committed to principles of equal opportunity and affirmative action. 06/10-15391 BANQUET MENUS  

E-Print Network [OSTI]

. The client will be billed for the total number prepared for. BanqueT Food service It is the policy banquet space within the Georgia Center must be furnished by Georgia Center Food Services. Below to assist you. Planning Timeline In order to provide you with excellent customer service, we must have your

Arnold, Jonathan

254

Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and Use of Data Policy  

E-Print Network [OSTI]

Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and Use of Data Policy Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and the NACElink Network to provide student with Eagle Career Net. Eagle Career Net is our online system

Hutcheon, James M.

255

FACULTY POSITION UNIVERSITY OF GEORGIA The Department of Poultry Science in the College of Agriculture and the Poultry  

E-Print Network [OSTI]

FACULTY POSITION ­ UNIVERSITY OF GEORGIA The Department of Poultry Science in the College of Agriculture and the Poultry Diagnostic and Research Center in the Department of Population Health in the area of poultry health and production. Georgia is the leading poultry producing state in the US

Navara, Kristen

256

Observations of short-circuiting flow paths within a free-surface wetland in Augusta, Georgia, U.S.A.  

E-Print Network [OSTI]

constructed treatment wetland in Augusta, Georgia were used to quantify the size, distribution, velocity). In treatment wetlands, such heterogeneity nearly always results in reduced contaminant removal (WoObservations of short-circuiting flow paths within a free-surface wetland in Augusta, Georgia, U

Licciardi, Joseph M.

257

Structural And Physical Characterization of Tetranuclear [Mn**II(3)Mn**IV] And [Mn**II(2)Mn**III(2)] Valence-Isomer Manganese Complexes  

SciTech Connect (OSTI)

Two tetranuclear Mn complexes with an average Mn oxidation state of +2.5 have been prepared. These valence isomers have been characterized by a combination of X-ray crystallography, X-ray absorption spectroscopy, and magnetic susceptibility. The Mn{sup II}{sub 3}Mn{sup IV} tetramer has the Mn ions arranged in a distorted tetrahedron, with an S = 6 ground spin state, dominated by ferromagnetic exchange among the manganese ions. The Mn{sup II}{sub 2}Mn{sup III}{sub 2} tetramer also has a distorted tetrahedral arrangement of Mn ions but shows magnetic behavior, suggesting that it is a single-molecule magnet. The X-ray absorption near-edge structure (XANES) spectra for the two complexes are similar, suggesting that, while Mn XANES has sufficient sensitivity to distinguish between trinuclear valence isomers (Alexiou et al. Inorg. Chem. 2003, 42, 2185), similar distinctions are difficult for tetranuclear complexes such as that found in the photosynthetic oxygen-evolving complex.

Zaleski, C.M.; Weng, T.-C.; Dendrinou-Samara, C.; Alexiou, M.; Kanakaraki, P.; Hsieh, W.-Y.; Kampf, J.; Penner-Hahn, J.E.; Pecoraro, V.L.; Kessissoglou, D.P.

2009-05-28T23:59:59.000Z

258

Lanier County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 - 429Lacey, Washington:Lakeville, MN) Jump to:LamarJumpElectric Coop IncAS Jump

259

Lee County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 - 429Lacey, Washington:Lakeville, MN)Lauderhill,5.Lectrique Solaire LLC071. It is°

260

Bicolor Mn-doped CuInS{sub 2}/ZnS core/shell nanocrystals for white light-emitting diode with high color rendering index  

SciTech Connect (OSTI)

We synthesized bicolor Mn-doped CuInS{sub 2} (CIS)/ZnS core/shell nanocrystals (NCs), in which Mn{sup 2+} ions and the CIS core were separated with a ZnS layer, and both Mn{sup 2+} ions and CIS cores could emit simultaneously. Transmission electron microscopy and powder X-ray diffraction measurements indicated the epitaxial growth of ZnS shell on the CuInS{sub 2} core, and electron paramagnetic resonance spectrum indicated that Mn{sup 2+} ions were on the lattice points of ZnS shell. By integrating these bicolor NCs with commercial InGaN-based blue-emitting diodes, tricolor white light-emitting diodes with color rendering index of 83 were obtained.

Huang, Bo; Dai, Qian; Zhang, Huichao; Liao, Chen; Cui, Yiping; Zhang, Jiayu, E-mail: jyzhang@seu.edu.cn [Advanced Photonic Center, Southeast University, Nanjing 210096 (China); Zhuo, Ningze; Jiang, Qingsong; Shi, Fenghua; Wang, Haibo [Research Institute of Electric Light Source Materials, Nanjing University of Technology, Nanjing 210015 (China)

2014-09-07T23:59:59.000Z

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Aberration-corrected electron microscopy of MnAs and As nanocrystals and voids in annealed (Ga,Mn)As  

E-Print Network [OSTI]

were grown at 270 °C using an As2 flux generated by a DCA valve cracker effusion cell with an As aberration coefficient (Cs) was used. The beam convergence semi-angle used for STEM was 15.7 mrad. The inner

Dunin-Borkowski, Rafal E.

262

Abundance analysis of SB2 binary stars with HgMn primaries  

E-Print Network [OSTI]

We present a short review of the abundances in the atmospheres of SB2 systems with Mercury-Manganese (HgMn) primaries. Up to now a careful study has been made for both components of 8 out of 17 known SB2 binaries with orbital periods shorter than 100 days and mass ratio ranging from 1.08 to 2.2. For all eight systems we observe a lower Mn abundance in the secondary's atmospheres than in the primary's. Significant difference in the abundances is also found for some peculiar elements such as Ga, Xe, Pt. All secondary stars with effective temperatures less than 10000 K show abundance characteristics typical of the metallic-line stars.

T. Ryabchikova

1998-05-06T23:59:59.000Z

263

Design and performance of the Georgia Tech Aquatic Center photovoltaic system. Final report  

SciTech Connect (OSTI)

A building-integrated DC PV array has been constructed on the Georgia Tech campus. The array is mounted on the roof of the Georgia Tech Aquatic Center (GTAC), site of the aquatic events during the 1996 Paralympic and Olympic Games in Atlanta. At the time of its construction, it was the world`s largest roof-mounted photovoltaic array, comprised of 2,856 modules and rates at 342 kW. This section describes the electrical and physical layout of the PV system, and the associated data acquisition system (DAS) which monitors the performance of the system and collects measurements of several important meteorological parameters.

Rohatgi, A.; Begovic, M.; Long, R.; Ropp, M.; Pregelj, A.

1996-12-31T23:59:59.000Z

264

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets  

SciTech Connect (OSTI)

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

2013-08-19T23:59:59.000Z

265

Spin-Orbit Torque Driven Magnetization Dynamics in (Ga,Mn)As and (Ga,Mn)(As,P) Dilute Magnetic Semiconductors  

E-Print Network [OSTI]

Spintronics-based technologies are poised to leapfrog the current limitations on the scaling, speed, and power consumption of electronic devices. Conventional devices rely on complex structures and magnetic-field-based switching to manipulate data...

Vehstedt, Erin Kathleen

2014-07-18T23:59:59.000Z

266

Effect of Mn doping on the structural, morphological, optical...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films. Effect of Mn doping on the structural, morphological, optical and magnetic...

267

BLACK POLITICAL THEOLOGY Spring 2010 // Georgia State University // Directed Reading Graduate Course  

E-Print Network [OSTI]

BLACK POLITICAL THEOLOGY Spring 2010 // Georgia State University // Directed Reading Graduate in "political theology" in the humanities. The term comes from the German jurist Carl Schmitt who suggested in his book of that title that "all significant political concepts of the modern theory of the state

Doyle, Robert

268

Project Title Improved Emission Models for Project Evaluation (MOVES-Matrix) University Georgia Institute of Technology  

E-Print Network [OSTI]

Project Title Improved Emission Models for Project Evaluation (MOVES-Matrix) University Georgia or organization) DOT - $92,292.15 Total Project Cost $92,292.15 Agency ID or Contract Number DTRT13-G-UTC29 Start and End Dates November 2013 - June 2015 Brief Description of Research Project Local governments are using

California at Davis, University of

269

e-mailed 07/22/2013 TO: Georgia Tech PCard Coordinators & Pcard holders  

E-Print Network [OSTI]

: Business Services Subject: Policy Change for Food Purchases using the PCard Effective August 1, 2013, monthly bottled water service ­ use account 714350 (food/beverage off the shelf). 2. Caterer invoice less, Georgia Tech's policy exemption from Department of Administrative Services will no longer be in effect

Jacobs, Laurence J.

270

U.S. EPA State Carbon Emissions Goals Georgia Fact Sheet  

E-Print Network [OSTI]

on economic cost and benefits estimates, a set of five very specific carbon abatement measures were selected. New renewable electrical energy sources, e.g., solar, wind, etc. 5. Reducing electric consumption Shelton, PhD Strategic Energy Institute Georgia Tech The U.S. EPA has published

Das, Suman

271

This article was downloaded by: [University of Georgia] On: 04 February 2014, At: 13:21  

E-Print Network [OSTI]

b a Savannah River National Laboratory, Savannah River Site, Aiken, SC 29808, USA b Savannah River. Fletcherb and Andrew M. Grosseb,y a Savannah River National Laboratory, Savannah River Site, Aiken, SC 29808, USA; b Savannah River Ecology Laboratory, University of Georgia, Aiken, SC 29808, USA (Received 30

Georgia, University of

272

Georgia researchers uncover new ways to meet America's alternative energy needs. By Kathy Brister  

E-Print Network [OSTI]

-up companies. State economic developers attracted more than $3 billion in commercial green-energy projects over-edge" biofuel projects. Here's a look at some of the bioenergy innovations under way in Georgia, Tapping Timber bioenergy company Range Fuels plans to crank up what's being billed as the United States' first commercial

Nair, Sankar

273

An Experimental Study of Microfabricated Nickel Spark Plug Georgia Institute of technology  

E-Print Network [OSTI]

electrodeposition through polymer molds. The nickel spark plugs are tested at 20 Hz using spark energies of 5 mAn Experimental Study of Microfabricated Nickel Spark Plug Georgia Institute of technology Atlanta presents experimental. results of the erosion and wear characteristics of micromachined nickel spark plugs

274

Space Physics in Greece: Experience and Future Prospects Ioannis A. Daglis, Anastasios Anastasiadis and Georgia Tsiropoula  

E-Print Network [OSTI]

Space Physics in Greece: Experience and Future Prospects Ioannis A. Daglis, Anastasios Anastasiadis and Georgia Tsiropoula National Observatory of Athens, Institute of Ionospheric and Space Research, Penteli Engineering, Xanthi, Greece Abstract. Space Physics was born with the launch of the first artifi­ cial

Anastasiadis, Anastasios

275

Our History Steeped in history and tradition, the University of Georgia Hotel and Conference Center has  

E-Print Network [OSTI]

........................................................................................................ $4.95 Chopped salad tossed with eggs, cucumbers, tomatoes, and avocado ranch dressing. Topped witnessed "the dressing of the dog" in a Georgia jersey ­ a scene included in his book "Midnight.95 Crisp Green Beans battered and fried to golden perfection served with a cool side of Avocado Ranch

Arnold, Jonathan

276

Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Comparative Anatomy of Vertebrates  

E-Print Network [OSTI]

Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Syllabus Comparative Anatomy of Vertebrates Biology 453 Tentative: Autumn Quarter 2014 Course Web Page: http://courses'll want to cover your eyes with safety glasses or wear glasses on dissection lab days. Goals My course

Carrington, Emily

277

Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Comparative Anatomy of Vertebrates  

E-Print Network [OSTI]

Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Syllabus Comparative Anatomy of Vertebrates Biology 453 Winter Quarter 2014 Course Web Page: http://courses.washington.edu/chordate/hmpg-biol453.html glasses on dissection lab days. Goals My course goals begin with learning the vocabulary of anatomy; you

Carrington, Emily

278

Adopted Version 1 Georgia Tech's "BuzzPort" Portal Usage Policy  

E-Print Network [OSTI]

Adopted Version 1 Georgia Tech's "BuzzPort" Portal Usage Policy v. 7.1 1.0 PURPOSE This Policy are highly valued and sensitive Institute resources. This Policy establishes an acceptable usage framework.0 SCOPE This Policy applies to all authorized BuzzPort usage from any location at all times

Li, Mo

279

Habitat for Humanity: La Grange, Georgia, 2003 Jimmy Carter Work Project  

SciTech Connect (OSTI)

The Troup-Chambers Habitat for Humanity built a Habitat house to ENERGY STAR standards in LaGrange, Georgia, in 2003. The project was so successfully that all Troup-Chambers houses will now be built to ENERGY STAR standards.

Not Available

2005-06-01T23:59:59.000Z

280

School of Architecture College of Architecture Georgia Institute of Technology M.S. IN URBAN DESIGN  

E-Print Network [OSTI]

1 School of Architecture College of Architecture Georgia Institute of Technology M.S. IN URBAN and richly interdisciplinary experience, with required courses in urban design, architecture and city planning, with additional opportunities in civil and environmental engineering, real estate development

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

The University of Georgia Job Search Strategies | Resume | Cover Letter | Interviewing | Social Media  

E-Print Network [OSTI]

The University of Georgia Job Search Strategies | Resume | Cover Letter | Interviewing | Social Fair 6 Reference/Recommendation Guidelines 7 Resume Guidelines 8 Sample Resumes 9-13 Power Verbs 14 a Major · Choosing a Career · Resumes · Cover Letters · Mock Interviews · The Job Search · Personal

Arnold, Jonathan

282

IMPROVEMENT OF CdMnTe DETECTOR PERFORMANCE BY MnTe PURIFICATION  

SciTech Connect (OSTI)

Residual impurities in manganese (Mn) are a big obstacle to obtaining high-performance CdMnTe (CMT) X-ray and gamma-ray detectors. Generally, the zone-refining method is an effective way to improve the material's purity. In this work, we purified the MnTe compounds combining the zone-refining method with molten Te, which has a very high solubility for most impurities. We confirmed the improved purity of the material by glow-discharge mass spectrometry (GDMS). We also found that CMT crystals from a multiply-refined MnTe source, grown by the vertical Bridgman method, yielded better performing detectors.

Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Tappero, R.; Hossain, A.; Cui, Y.; Yang, G.; Gul, R.; and James, R.B.

2011-04-25T23:59:59.000Z

283

Mn/DOT County Road Safety Plans  

E-Print Network [OSTI]

Roads Program !! Minnesota Central Safety Funds !! Foster safety culture among county stakeholders 41 Mn/DOT County Road Safety Plans CTS Annual Research Conference April 27 & 28, 2010 Howard Preston & Objectives !! Project Overview !! Schedule, Participating Counties, Approach !! Safety Emphasis Areas

Minnesota, University of

284

Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011  

SciTech Connect (OSTI)

This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

Not Available

2011-05-01T23:59:59.000Z

285

Supplemental Guide for Seasonal High Water Table Indicators in Georgia's Onsite Wastewater Manual Section C: Flatwoods Region  

E-Print Network [OSTI]

1 Supplemental Guide for Seasonal High Water Table Indicators in Georgia's Onsite Wastewater Manual) are part of the Atlantic Coast Flatwoods that run along the eastern shore of the US. They fall within

Ma, Lena

286

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

287

AlGaAs emitter/GaAs barrier terahertz detector with a 2.3 THz threshold M. B. M. Rinzan and A. G. U. Pereraa  

E-Print Network [OSTI]

NDP Optronics LLC, 236 St. Martins Drive, Mableton, Georgia 30126 H. C. Liu, Z. R. Wasilewski, and M

Perera, A. G. Unil

288

High Mn austenitic stainless steel  

DOE Patents [OSTI]

An austenitic stainless steel alloy includes, in weight percent: >4 to 15 Mn; 8 to 15 Ni; 14 to 16 Cr; 2.4 to 3 Al; 0.4 to 1 total of at least one of Nb and Ta; 0.05 to 0.2 C; 0.01 to 0.02 B; no more than 0.3 of combined Ti+V; up to 3 Mo; up to 3 Co; up to 1W; up to 3 Cu; up to 1 Si; up to 0.05 P; up to 1 total of at least one of Y, La, Ce, Hf, and Zr; less than 0.05 N; and base Fe, wherein the weight percent Fe is greater than the weight percent Ni, and wherein the alloy forms an external continuous scale including alumina, nanometer scale sized particles distributed throughout the microstructure, the particles including at least one of NbC and TaC, and a stable essentially single phase FCC austenitic matrix microstructure that is essentially delta-ferrite-free and essentially BCC-phase-free.

Yamamoto, Yukinori (Oak Ridge, TN) [Oak Ridge, TN; Santella, Michael L (Knoxville, TN) [Knoxville, TN; Brady, Michael P (Oak Ridge, TN) [Oak Ridge, TN; Maziasz, Philip J (Oak Ridge, TN) [Oak Ridge, TN; Liu, Chain-tsuan (Knoxville, TN) [Knoxville, TN

2010-07-13T23:59:59.000Z

289

Hating the Bear? : Root Causes of Perceived anti-Russian Slant in Western News Coverage of the 2008 Russia-Georgia War  

E-Print Network [OSTI]

In Person Interview. Moscow, Russia. 27 March 2010. Harding,In Person Interview. Moscow, Russia. 25 March 2010.Group (Organization). Russia & Georgia: The Fallout. 22

Spivakovsky-Gonzalez, Pedro

2011-01-01T23:59:59.000Z

290

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

291

Structural and Dynamical Fluctuations in Off-Stoichiometric NiMnGa Shape-Memory Alloys  

SciTech Connect (OSTI)

3D diffuse scattering dataset in the temperature region of the existence of high temperature cubic L21 phase reveals localized intensity maxima related to phason modes. Peierls instability induced tetragonal distortions in the pre-martensitic phase cause strong diffuse scattering. Around (H0H) reflections diffuse scattering is strongly compressed along the [H0H] and enhanced along the [-H0H] direction.

Barabash, Rozaliya [ORNL] [ORNL; Barabash, Oleg M [ORNL] [ORNL; Karapetrova, Evgenia [University of Illinois, Urbana-Champaign] [University of Illinois, Urbana-Champaign; Manley, Michael E [ORNL] [ORNL

2014-01-01T23:59:59.000Z

292

Acoustic assisted actuation of Ni-Mn-Ga ferromagnetic shape memory alloys  

E-Print Network [OSTI]

Ferromagnetic shape memory alloys (FSMA) have been shown in recent work to exhibit large magnetic field induced strains. The material generally requires a large threshold field (of order 3-4 kOe) to initiate the strain. ...

Peterson, Bradley William

2006-01-01T23:59:59.000Z

293

Intra-variant Substructure in Ni-Mn-Ga Martensite: Conjugation Boundaries .  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFunInfrared LandResponses to EngineeredA GENERAL2Radiative Transfer| EMSL

294

GA Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:GA-Solar

295

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

296

Native point defects in GaSb  

SciTech Connect (OSTI)

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

2014-10-14T23:59:59.000Z

297

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

298

Beta decay of Ga-62  

E-Print Network [OSTI]

from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

299

Modelling Al and Mn in the open ocean  

E-Print Network [OSTI]

Modelling Al and Mn in the open ocean Marco van Hulten*, Alessandro Tagliabue, Jean-Claude Dutay van Hulten: Modelling Al and Mn in the open ocean 1 #12;Outline Introduction Model of aluminium Constraining dust flux Model of manganese Conclusions Marco van Hulten: Modelling Al and Mn in the open ocean 2

Haak, Hein

300

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

SUPPORTED BY THE UGA OFFICE OF THE VICE PRESIDENT FOR INSTRUCTION OVPI.UGA.EDU The University of Georgia hosts the  

E-Print Network [OSTI]

, the Assessment Institute and Advising Research Seminar. She co-authored two articles in Academic advising: New NACADA Georgia Drive-in Conference The University of Georgia Academic Advising Coordinating Council #12 to undergraduate education, student success and retention, academic advising, curriculum and policy development

Arnold, Jonathan

302

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

in the prices paid for energy in recent years. In the last 10 years electrical costs have ranged from $0.07 per costs associated with the live production of broilers on farms in Georgia and the United States. HeatingPUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U

Navara, Kristen

303

Pre-Natural Resources (Two-year) Transfer Program Georgia Southern University, in cooperation with the Warnell School of Forestry and  

E-Print Network [OSTI]

School of Forest Resources to complete a Bachelor of Science in Forest Resources (BSFR). A limited numberPre-Natural Resources (Two-year) Transfer Program Georgia Southern University, in cooperation with the Warnell School of Forestry and Natural Resources, University of Georgia, offers a joint program of study

Hutcheon, James M.

304

MN4602 Crouch 2004 REASSESSING WEAPON SYSTEM  

E-Print Network [OSTI]

MN4602 Crouch 2004 REASSESSING WEAPON SYSTEM OPERATIONAL TEST & EVALUATION METHODOLOGIES LTC Thom support assessing a weapon systems true cost and performance characteristics? S1: Can/should cost, operational effectiveness and suitability be assessed independent of one another? S2: Do current test

305

"MBUF Demo" "Mn Road Fee Test"  

E-Print Network [OSTI]

(40 mpg) Electric Vehicle (non-gas powered) State Tax * Federal Tax ** State Tax * Federal Tax"MBUF Demo" "Mn Road Fee Test" "IntelliDrive Connected Vehicles for Safety, Mobility and User Fee Overview Six Months In-Vehicle Data Collection Participant Recruited Equipment Deployed First Odometer

Minnesota, University of

306

Mn/DOT's Project Peer Review  

E-Print Network [OSTI]

and sustain this culture #12;Project Management #12;Recent National Work in Transportation Project ManagementMn/DOT's Project Management Peer Review Creating a Project Management Culture 2010 CTS Research a Peer Review? Why Project Management? ·Improve project delivery performance ­ on time, on budget (an

Minnesota, University of

307

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents [OSTI]

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

308

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

309

Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs  

E-Print Network [OSTI]

AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

Gao, Feng, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

310

Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA  

E-Print Network [OSTI]

Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

McGaughey, Alan

311

QUICK FACTS The University of Georgia Gwinnett Campus seeks to be a highly accessible and vibrant center  

E-Print Network [OSTI]

Master's Degrees FY10 1,213 142 4 Educational Specialist Degrees FY11 1,316 254 3 Doctoral Programs FY UGA Center for Continuing Education Age range: 22-60 Certificate Programs Average # of hours enrolled and northeast Georgia by: Increasing access to graduate degree programs, post-baccalaureate certificates

Arnold, Jonathan

312

Digital Media Tenure Track Position Georgia Tech's School of Literature, Media, and Communication (LMC), which provides diverse  

E-Print Network [OSTI]

Digital Media Tenure Track Position Georgia Tech's School of Literature, Media, and Communication Digital Media tenure track position at the rank of Assistant Professor, beginning in the fall of 2013. We's Computational Media and Digital Media programs. A Ph.D. in an appropriate field is required (e.g. digital media

Li, Mo

313

Landscape Services Department Landscape Services Department is responsible for the maintenance of grounds and landscape of Georgia  

E-Print Network [OSTI]

Landscape Services Department Landscape Services Department is responsible for the maintenance of grounds and landscape of Georgia Tech campus. The mission of the department is to maintain a beautiful and parking lots as per schedule. · Operate and maintain Calsense Irrigation Systems to water landscape

314

Landscape Services Department Landscape Services Department is responsible for the maintenance of grounds and landscape of Georgia  

E-Print Network [OSTI]

Landscape Services Department Landscape Services Department is responsible for the maintenance of grounds and landscape of Georgia Tech's 426 acre campus. The mission of the department is to maintain landscape and Couch Park. · Install and maintain traffic signs, crosswalks, street signs, etc. · Plant

315

Prioritizing Areas of the Conasauga River Sub-basin in Georgia and Tennessee for Preservation and Restoration  

E-Print Network [OSTI]

controversial (Simon et al., 2007). Here we define restoration to mean direct modification of stream channels. Because both land preservation and stream restoration are expensive tools, there is a general public and Restoration SETH J. WENGER1,*, MEGAN M. HAGLER2, AND BYRON J. FREEMAN3 1University of Georgia River Basin

Rosemond, Amy Daum

316

Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation Exercise  

Broader source: Energy.gov [DOE]

COVINGTON, Ga. – Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help them prepare for an actual incident.

317

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network [OSTI]

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Boyer, Edmond

318

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

319

Results of a baseflow tritium survey of surface water in Georgia across from the Savannah River Site  

SciTech Connect (OSTI)

In October 1991 the Georgia Department of Natural Resources (GDNR) issued a press release notifying the public that tritium had been measured in elevated levels (1,200 - 1,500 pCi/1) in water samples collected from drinking water wells in Georgia across from the Savannah River Site in Aiken Co. South Carolina. None of the elevated results were above the Primary Drinking Water Standard for tritium of 20,000 pCi/l. The GDNR initiated 2 surveys to determine the source and extent of elevated tritium: (1) baseflow survey of surface water quality, and (2) well evaluation program. Results from the 2 surveys indicate that the tritium measured in groundwater wells in Georgia is not the result of a groundwater flow from South Carolina under the Savannah River and into Georgia. Atmospheric transport and consequent rainout and infiltration has resulted in an increase of tritium in the water-table aquifer in the vicinity. Water samples collected from drinking water wells believed to have been installed in the aquifer beneath the water-table aquifer were actually from the shallower water-table aquifer. Water samples collected from the wells contain the amount of tritium expected for the water-table aquifer in the sample area. The measured tritium levels in the well samples and baseflow samples do not exceed Primary Drinking Water Standards. Tritium levels in the water-table in Georgia will decline as the atmospheric releases from SRS decline, tritium undergoes natural decay, and infiltration water with less tritium flushes through the subsurface.

Nichols, R.L.

1993-03-03T23:59:59.000Z

320

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer  

SciTech Connect (OSTI)

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

2008-01-01T23:59:59.000Z

322

,"International Falls, MN Natural Gas Pipeline Imports From Canada...  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Natural Gas Pipeline Imports From Canada (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of...

323

,"Noyes, MN Natural Gas Pipeline Imports From Canada (MMcf)"  

U.S. Energy Information Administration (EIA) Indexed Site

Imports From Canada (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Noyes, MN...

324

,"Warroad, MN Natural Gas Pipeline Imports From Canada (MMcf...  

U.S. Energy Information Administration (EIA) Indexed Site

Imports From Canada (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Warroad, MN...

325

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

326

Alignment of micro-crystals of Mn12-acetate and direct observation of single molecules thereof  

E-Print Network [OSTI]

This dissertation focuses on three separate studies. First, magnetization of the Mn12- acetate was studied by low temperature hysteresis loops and DC magnetization data on magnetically aligned Mn12-acetate micro-crystals. Secondly, Mn12-acetate thin...

Seo, Dongmin

2009-05-15T23:59:59.000Z

327

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

of operation of the AFO. CNMPs for permitted AFOs require assessment of risks related to phosphorous application. In Georgia, the use of a P-Index will be used to assess site-specific risks for phosphorous

Navara, Kristen

328

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

329

Enrichment of trace elements in rare-metal bearing pegmatites of the muscovite class: Examples from the Jasper, Thomaston-Barnesville, Troup and Cherokee-Pickens districts in Georgia  

SciTech Connect (OSTI)

Pegmatites from four important mining districts in Georgia: the Cherokee-Pickens district (mica and beryl), the Thomaston-Barnesville (mica), Troup (beryl), and Jasper County (feldspar) districts, generally contain quartz, muscovite, K-feldspar and oligoclase and can be included in the muscovite class of pegmatites. No source intrusions are known for any of these pegmatite districts. The Thomaston-Barnesville district covers about 2,000 km[sup 2] compared to the < 100 km[sup 2] of the other three districts and includes 3--4 times as many pegmatites as each of the other districts. The more highly fractionated pegmatites represent 42 to 48 % of the total number of pegmatites sampled in each district except for the Thomaston-Barnesville district in which only 7 % are more highly fractionated. Muscovites from the more highly fractionated pegmatites in these districts contain mean trace element values of 1,118--1,732 ppm Rb, 1,867--3,083 ppm F, 91--278 ppm Li, 7.7-31 ppm Be, 122--147 ppm Ga, 122--315 ppm Nb, and 137--254 ppm Zn. These pegmatites have mean Ba/Rb and Rb/K[sub 2]O ratios of 0.01--0.21 and 129--177 ppm. Mean Ba is 19--234 ppm. Mean trace element values of muscovites from the least fractionated pegmatites are 381--675 ppm Rb, 748--1,622 ppm F, 33--221 ppm Li, 4:8--20.6 ppm Be, 56--80 ppm Ga, 32--152 ppm Nb, and 59--113 ppm Zn. These pegmatites have mean Ba/Rb and Rb/K[sub 2]O ratios of 0.44--2.83 and 39--76. Mean Ba is 218--857 ppm. In each district, the more highly fractionated pegmatites contain beryl or are in the vicinity of beryl-bearing pegmatites.

Cocker, M.D. (Georgia Geologic Survey, Atlanta, GA (United States))

1992-01-01T23:59:59.000Z

330

Minnesota Guidestar www.dot.state.mn.us/guidestar  

E-Print Network [OSTI]

.dot.state.mn.us/guidestar What is ITS? · Application of technology to improve the safety and efficiency of the transportation system. #12;Minnesota Guidestar www.dot.state.mn.us/guidestar What is ITS? · Traffic Management ­ Signal Systems ­ Ramp Meters · Emergency Response ­ Mobile Data Terminals ­ 911 Dispatch ­ RF Data Networks

Minnesota, University of

331

Thermal Stability of MnBi Magnetic Materials  

SciTech Connect (OSTI)

MnBi attracts great attention in recent years for its great potential as permanent magnet materials. It is unique because its coercivity increases with increasing temperature, which makes it a good hard phase for exchange coupling nanocomposite magnet. MnBi phase is difficult to obtain, partly because the reaction between Mn and Bi is peritectic, and partly because Mn is easy to react with oxygen. MnO formation is irreversible and causes degradation to the magnetic properties. In this paper, we report our effort on developing MnBi permanent magnet. High purity MnBi (>90%) can be routinely produced in large quantity. The obtained powder exhibit 74 emu/g saturation magnetization at room temperature with 9 T applied field. After alignment, the powder exhibits 11.6 MGOe, and the sintered bulk magnet exhibit 7.8 MGOe at room temperature. Thermal stability study shows that the MnBi is stable up to 473 K in air.

Cui, Jun; Choi, Jung-Pyung; Li, Guosheng; Polikarpov, Evgueni; Darsell, Jens T.; Overman, Nicole R.; Olszta, Matthew J.; Schreiber, Daniel K.; Bowden, Mark E.; Droubay, Timothy C.; Kramer, Matthew J.; Zarkevich, Nikolai; Wang, L. L.; Johnson, Duane D.; Marinescu, Melania; Takeuchi, Ichiro; Huang, Qingzhen; Wu, Hui; Reeve, Hayden; Vuong, Nguyen V.; Liu, J.Ping

2014-01-01T23:59:59.000Z

332

Thermal stability of MnBi magnetic materials  

SciTech Connect (OSTI)

MnBi has attracted much attention in recent years due to its potential as a rare-earth-free permanent magnet material. It is unique because its coercivity increases with increasing temperature, which makes it a good hard phase material for exchange coupling nanocomposite magnets. MnBi phase is difficult to obtain, partly because the reaction between Mn and Bi is peritectic, and partly because Mn reacts readily with oxygen. MnO formation is irreversible and harmful to magnet performance. In this paper, we report our efforts toward developing MnBi permanent magnets. To date, high purity MnBi (>90%) can be routinely produced in large quantities. The produced powder exhibits 74:6 emu g1 saturation magnetization at room temperature with 9 T applied field. After proper alignment, the maximum energy product (BH) max of the powder reached 11.9 MGOe, and that of the sintered bulk magnet reached 7.8 MGOe at room temperature. A comprehensive study of thermal stability shows that MnBi powder is stable up to 473 K in air.

Cui, Jinfang [Pacific Northwest National Laboratory; Choi, J. P. [Pacific Northwest National Laboratory; Li, G. [Pacific Northwest National Laboratory; Polikarpov, E. [Pacific Northwest National Laboratory; Darsell, J. [Pacific Northwest National Laboratory; Overman, N. [Pacific Northwest National Laboratory; Olszta, M. [Pacific Northwest National Laboratory; Schreiber, D. [Pacific Northwest National Laboratory; Bowden, M. [Environmental Molecular Sciences Laboratory; Droubay, T. [Pacific Northwest National Laboratory; Kramer, Matthew J. [Ames Laboratory; Zarkevich, Nikolay A. [Ames Laboratory; Wang, L L. [Ames Laboratory; Johnson, Duane D. [Ames Laboratory; Marinescu, M. [Electron Energy Corporation; Takeuchi, I. [University of Maryland; Huang, Q. Z. [National Institute of Standards and Technology; Wu, H. [University of Maryland; Reeve, H. [United Technologies Research Center; Vuong, N. V. [University of Texas; Liu, J P. [University of Texas

2014-01-27T23:59:59.000Z

333

Georgia Waste Control Law (Georgia)  

Broader source: Energy.gov [DOE]

The Waste Control Law makes it unlawful to dump waste in any lakes, streams or surfaces waters of the State or on any private property without consent of the property owner. Waste is very broadly...

334

E-Print Network 3.0 - area glare sources Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

...2 C. Cherokee County, Georgia's Outdoor Lighting and Road Glare Ordinance... County, Ga., Outdoor...

335

Spectroscopy of Mn atoms isolated in solid {sup 4}He  

SciTech Connect (OSTI)

We present an experimental study of the laser-induced luminescence spectra of Mn atoms in solid helium matrices. We observe transitions of the valence electron and of inner-shell electrons. We find that the Mn-He interaction perturbs the inner-shell transitions to a lesser extent than the valence-electron transitions. The observed lineshapes of the inner-shell transitions of Mn are similar to those of an inner-shell transition in Ba studied earlier. At the same time, they are more strongly perturbed than the corresponding transitions in Au and Cu under the same conditions. We suggest a qualitative explanation of these observations based on the atomic bubble model. Our results also suggest that the inner-shell transitions of Mn in solid He are more strongly perturbed than the same lines of Mn isolated in solid Ar or Kr matrices.

Moroshkin, P., E-mail: petr.moroshkin@riken.jp; Lebedev, V.; Weis, A. [Department of Physics, University of Fribourg, Chemin du Musée 3, 1700 Fribourg (Switzerland)

2014-06-07T23:59:59.000Z

336

Magnetic Moment Enhancement for Mn7 Cluster on Graphene  

SciTech Connect (OSTI)

Mn7 cluster on graphene with different structural motifs and magnetic orders are investigated systematically by first-principles calculations. The calculations show that Mn7 on graphene prefers a two-layer motif and exhibits a ferrimagnetic coupling. The magnetic moment of the Mn7 cluster increases from 5.0 ?B at its free-standing state to about 6.0 ?B upon adsorption on graphene. Mn7 cluster also induces about 0.3 ?B of magnetic moment in the graphene layer, leading to an overall enhancement of 1.3 ?B magnetic moment for Mn7 on graphene. Detail electron transfer and bonding analysis have been carried out to investigate the origin of the magnetic enhancement.

Liu, Xiaojie [Ames Laboratory; Wang, Cai-Zhuang [Ames Laboratory; Lin, Hai-Qing [Beijing Computational Science Research Center; Ho, Kai-Ming [Ames Laboratory

2014-08-21T23:59:59.000Z

337

The helium abundances in HgMn and normal stars  

E-Print Network [OSTI]

The parameter-free model of diffusion in the atmospheres of HgMn stars (Michaud 1986; Michaud et al 1979) predicts that helium should sink below the He II ionization zone in order that diffusion of other elements may take place, and that all HgMn stars should have deficits of helium in their photospheres, with a minimum deficit of 0.3 dex. In this study, the Smith & Dworetsky (1993) sample of HgMn stars and normal comparison stars is examined, and the helium abundances determined by spectrum synthesis using echelle spectra taken at Lick Observatory and the AAT. The prediction is confirmed; all HgMn stars are deficient in He by as much as 1.5 dex. Also, two HgMn stars, HR7361 and HR7664, show clear evidence of helium stratification.

M. M. Dworetsky

2004-07-26T23:59:59.000Z

338

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

339

Formation of MnSb during the growth of MnSi layers in the presence of an Sb flux  

E-Print Network [OSTI]

, Kawasaki 210-0855, Japan Y. Yan National Renewable Energy Laboratory, Golden, Colorado 80401 S. J a magnetic transition at TC 29.1 K from a paramag- netic state to a helicoidal order.3 An itinerant metamagnetic transition in MnSi has been observed,4,5 and magnetic prop- erties of MnSi under high pressure

Pennycook, Steve

340

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures  

SciTech Connect (OSTI)

In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

2014-01-13T23:59:59.000Z

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire  

SciTech Connect (OSTI)

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-08T23:59:59.000Z

342

Chemical and structural investigation of the role of both Mn and Mn oxide in the formation of manganese silicate barrier layers on SiO{sub 2}  

SciTech Connect (OSTI)

In this study, Mn silicate (MnSiO{sub 3}) barrier layers were formed on thermally grown SiO{sub 2} using both metallic Mn and oxidized Mn films, in order to investigate the role of oxygen in determining the extent of the interaction between the deposited Mn and the SiO{sub 2} substrate. Using x-ray photoelectron spectroscopy, it has been shown that a metallic Mn film with an approximate thickness of 1 nm cannot be fully converted to Mn silicate following vacuum annealing to 500 deg. C. Transmission electron microscopy (TEM) analysis suggests the maximum MnSiO{sub 3} layer thickness obtainable using metallic Mn is {approx}1.7 nm. In contrast, a {approx}1 nm partially oxidized Mn film can be fully converted to Mn silicate following thermal annealing to 400 deg. C, forming a MnSiO{sub 3} layer with a measured thickness of 2.6 nm. TEM analysis also clearly shows that MnSiO{sub 3} growth results in a corresponding reduction in the SiO{sub 2} layer thickness. It has also been shown that a fully oxidized Mn oxide thin film can be converted to Mn silicate, in the absence of metallic Mn. Based on these results it is suggested that the presence of Mn oxide species at the Mn/SiO{sub 2} interface facilitates the conversion of SiO{sub 2} to MnSiO{sub 3}, in agreement with previously published studies.

Casey, P.; Bogan, J.; Hughes, G. [School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9 (Ireland); Lozano, J. G.; Nellist, P. D. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)

2011-09-01T23:59:59.000Z

343

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

344

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

345

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

346

Georgia Tech offers an NIH graduate training program for the rational design of integrative biomaterials (GTBioMAT). This interdisciplinary program will train the next generation of predoctoral students in the inter-disciplinary field of  

E-Print Network [OSTI]

Georgia Tech offers an NIH graduate training program for the rational design of integrative information. NIH INTERDISCIPLINARY TRAINING PROGRAM IN BIOMATERIALS Graduate Training for Rationally Designed

Li, Mo

347

Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper Science and Technology; Georgia Institute of Technology, Atlanta, GA.  

E-Print Network [OSTI]

Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper lignocellulosics to biodiesel fuel Feedstocks ABSTRACT This poster examines the potential of utilizing waste paper CelluloseHemicelluloseLigninResource Cracking and Refining of Polysaccharides Bio-Diesel Substitutes

348

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

349

InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall  

E-Print Network [OSTI]

°C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

Woodall, Jerry M.

350

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network [OSTI]

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

351

2011 Planning Committee Roster 15thAnnualGeorgiaTechFaultandDisturbanceAnalysisConference  

E-Print Network [OSTI]

Tucker GA 30084-5336 770-270-7737 (phone) 404-226-7803 (cell) marlin.browning@gatrans.com Phillip L.m@gatech.edu Tony Napikoski United Illuminating 6 Armstrong Road Shelton, CT 06484 203-926-4618 (phone) 203

Bennett, Gisele

352

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

353

Unusual Structure and Magnetism in MnO Nanoclusters  

E-Print Network [OSTI]

We report an unusual evolution of structure and magnetism in stoichiometric MnO clusters based on an extensive and unbiased search through the potential energy surface within density functional theory. The smaller clusters, containing up to five MnO units, adopt two-dimensional structures; and regardless of the size of the cluster, magnetic coupling is found to be antiferromagnetic in contrast to previous theoretical findings. Predicted structure and magnetism are strikingly different from the magnetic core of Mn-based molecular magnets, whereas they were previously argued to be similar. Both of these features are explained through the inherent electronic structures of the clusters.

Ganguly, Shreemoyee; Sanyal, Biplab; Mookerjee, Abhijit; 10.1103/PhysRevB.83.020411

2011-01-01T23:59:59.000Z

354

Parallel Polarization EPR Characterization of the Mn(III) Center of Oxidized Manganese Superoxide  

E-Print Network [OSTI]

Parallel Polarization EPR Characterization of the Mn(III) Center of Oxidized Manganese Superoxide polarization CW-EPR to investigate the paramagnetic Mn3+ ion of the MnSOD enzyme from Escherichia coli with a positive axial zero-field splitting value, D, are arranged as shown in Figure 1. An EPR signal from the Mn

Miller, Anne-Frances

355

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires  

SciTech Connect (OSTI)

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14T23:59:59.000Z

356

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template  

SciTech Connect (OSTI)

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-12-19T23:59:59.000Z

357

REGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based  

E-Print Network [OSTI]

the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit), metal oxide varistor (MOV), and transient voltage suppressor (TVS) diodes are the state-of-the- artREGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal­Semiconductor­Metal

Chow, Lee

358

Community Energy Systems and the Law of Public Utilities. Volume Twelve. Georgia  

SciTech Connect (OSTI)

A detailed description of the laws and programs of the State of Georgia governing the regulation of public energy utilities, the siting of energy generating and transmission facilities, the municipal franchising of public energy utilities, and the prescription of rates to be charged by utilities including attendant problems of cost allocations, rate base and operating expense determinations, and rate of return allowances. These laws and programs are analyzed to identify impediments which they may present to the implementation of Integrated Community Energy Systems (ICES). This report is one of fifty-one separate volumes which describe such regulatory programs at the Federal level and in each state as background to the report entitled Community Energy Systems and the Law of Public Utilities - Volume One: An Overview. This report also contains a summary of a strategy described in Volume One - An Overview for overcoming these impediments by working within the existing regulatory framework and by making changes in the regulatory programs to enhance the likelihood of ICES implementation.

Feurer, D A; Weaver, C L

1981-01-01T23:59:59.000Z

359

Pyrococcus Furiosus Genome Supplementary Data from the Adams Laboratory at the University of Georgia  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

The research in the Adams Laboratory focuses on the physiology of hyperthermophilic organisms with an emphasis on metal-containing enzymes in the hyperthermophilic marine archaeon Pyrococcus furiosus. Three of the many articles from this University of Georgia lab have supplementary materials that are available on the Adams Lab website. All three sets of data are Open Reading Frames (ORFs) used for DNA microarray experiments and the changes in signal intensities. The full citations for the three articles are: 1) Weinberg, M. V., Schut, G. J., Brehm, S., Datta, S. and Adams, M. W. W. (2005) Cold shock of a hyperthermophilic archaeon: Pyrococcus furiosus exhibits multiple responses to a suboptimal growth temperature with a key role for membrane-bound glycoproteins. J Bacteriol. 187, 336-348; 2) Schut, G. J., Brehm, S. D., Datta, S. and Adams, M. W. W. (2003) "Whole genome DNA microarray analysis of a hyperthermophile and an archaeon: Pyrococcus furiosus grown on carbohydrates or peptides" J. Bacteriol. 185, 3935-3947; Schut, G. J., Zhou, J. and Adams, M. W. W. (2001) "DNA microarray analysis of the hyperthermophilic archaeon Pyrococcus furiosus evidence for a new type of sulfur-reducing enzyme" J. Bacteriol. 183, 7027-7036. Note that these articles are copyrighted by the Journal of Bacteriology.

Adams, Michael W.W.; Weinberg, Michael V.; Schut, Gerrit J.; Brehm, Scott; Datta, Susmitta; Zhou, J.

360

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets  

SciTech Connect (OSTI)

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

2014-09-21T23:59:59.000Z

362

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

363

Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)  

SciTech Connect (OSTI)

GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2013-12-02T23:59:59.000Z

364

Ambi-site substitution of Mn in lanthanum germanate apatites  

SciTech Connect (OSTI)

A neutron diffraction study at 4 K of the Mn doped lanthanum germanate apatite-type oxide ion conductor of nominal starting composition 'La{sub 9.5}Mn{sub 0.5}(GeO{sub 4}){sub 6}O{sub 2.75}' is reported. The structure was refined in space group P6{sub 3}/m, although high thermal displacement parameters were observed for the oxide ion sites (particularly O3, and O4). Reduced thermal displacement parameters were obtained by splitting the O3 site, and allowing the O4 oxygen to move off site, which may indicate local regions of lower symmetry within the structure. In addition, the data suggested ambi-site substitution of Mn, with it being present on both the Ge site and the La site. Assuming no change in La:Mn:Ge ratio, a composition of La{sub 9.18}Mn{sub 0.28}(GeO{sub 4}){sub 5.8}(MnO{sub 4}){sub 0.2}O{sub 2} was determined. As such there are nominally no interstitial oxide ions, but rather cation vacancies on the La site. Therefore, the high conductivity for this sample is most likely related to the introduction of Frenkel-type defects at higher temperature, as previously proposed for other apatite-type systems containing vacancies on the La site.

Kendrick, E. [Chemical Sciences, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Knight, K.S. [ISIS Facility, Rutherford Appleton Laboratory, Harwell Science and Innovation Campus, Didcot OX11 0QX (United Kingdom); Slater, P.R., E-mail: p.r.slater@bham.ac.uk [School of Chemistry, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

2009-08-05T23:59:59.000Z

365

Quantum confinement in GaP nanoclusters  

SciTech Connect (OSTI)

We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

Laurich, B.K.; Smith, D.C.; Healy, M.D.

1994-06-01T23:59:59.000Z

366

Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers  

SciTech Connect (OSTI)

CdTe/MnTe/CdMgTe quantum-well structures with one or two monolayers of MnTe inserted at CdTe/CdMgTe interfaces were fabricated. The spectra of the excitonic luminescence from CdTe quantum wells and their variation with temperature indicate that introduction of ultrathin MnTe layers improves the interface quality. The effect of a magnetic field in the Faraday configuration on the spectral position of the exciton-emission peaks indicates that frustration of magnetic moments in one-monolayer MnTe insertions is weaker than in two-monolayer insertions. The effect of a magnetic field on the exciton localization can be explained in terms of the exciton wave-function shrinkage and obstruction of the photoexcited charge-carrier motion in the quantum well.

Agekyan, V. F., E-mail: vfag@rambler.ru [St. Petersburg State University, Fock Institute of Physics (Russian Federation); Holz, P. O. [Polish Academy of Sciences, Institute of Physics (Poland); Karczewski, G. [Linkoeping University (Sweden); Katz, V. N. [St. Petersburg State University, Fock Institute of Physics (Russian Federation); Moskalenko, E. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Serov, A. Yu.; Filosofov, N. G. [St. Petersburg State University, Fock Institute of Physics (Russian Federation)

2011-10-15T23:59:59.000Z

367

Diversity of Mn oxides produced by Mn(II)-oxidizing fungi. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phasesDataTranslocationDiurnal Cycle of Convection atDiversity of Mn

368

Application of Mn/DOT Utility Coordination Process to Local Agencies Based on national best practices, the Minnesota Department of Transportation (Mn/DOT) Utility  

E-Print Network [OSTI]

Application of Mn/DOT Utility Coordination Process to Local Agencies Based on national best practices, the Minnesota Department of Transportation (Mn/DOT) Utility Coordination Process incorporates Processes There are projects where the full process is not necessary. The Mn/DOT Utilities Manual provides

Minnesota, University of

369

Comparison of the EXAFS Spectra of Heteronuclear MnCa/Sr Model Complexes to the Oxygen-Evolving Mn(4)Ca Complex of Photosystem II  

SciTech Connect (OSTI)

Heterometallic Mn-Ca and Mn-Sr complexes have been prepared and employed as model complexes for Ca and Sr EXAFS spectral comparisons with the Oxygen-Evolving Complex (OEC) of Photosystem II (PS II); these have revealed similarities that support the presence of at least one O atom bridge between the Mn and Ca/Sr in the OEC.

Mishra, A.; Yano, J.; Pushkar, Y.; Abboud, K.A.; Yachandra, V.K.; Christou, G.

2009-06-03T23:59:59.000Z

370

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

371

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

372

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

373

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots  

SciTech Connect (OSTI)

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

2014-01-06T23:59:59.000Z

374

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

375

Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes  

SciTech Connect (OSTI)

We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

2013-12-04T23:59:59.000Z

376

On strongly GA-convex functions and stochastic processes  

SciTech Connect (OSTI)

In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

2014-08-20T23:59:59.000Z

377

Georgia Power`s Plant Yates CT-121 demonstration performance results  

SciTech Connect (OSTI)

The Chiyoda CT-121 demonstration project, being conducted at Georgia Power`s Plant Yates` 100 MWe Unit 1, is an evaluation of a unique wet-limestone, forced-oxidized FGD process and is a part of the Innovative Clean Coal Technology (ICCT) program. The CT-121 process uses a single unique absorber vessel made entirely of fiberglass reinforced plastics called a jet bubbling reactor (JBR). The JBR allows concurrent completion of all the necessary reactions to remove sulfur dioxide from the flue gas and to precipitate a gypsum byproduct. This paper will discuss the results of the low-particulate test phase, including the effects of higher-sulfur coal, as well as initial results from the high-particulate test phase (existing electrostatic precipitator deenergized). DOE-sponsored air toxics testing has also been conducted, but final results were not available at the time of this writing. A discussion of limestone selection and its impact on the dewatering properties of the CT-121 gypsum byproduct is also included. Performance results emphasize the efficiency, reliability, and flexibility of the CT-121 process. Preliminary testing of the CT-121 process at Plant Yates has produced excellent performance results. The process has proven itself capable of exceeding its design SO{sub 2} removal efficiency specification of 90%, both with and without the ESP in service. The process has also achieved SO{sub 2} removal efficiencies of greater than 98%. Particulate measurements, conducted with the ESP deenergized, have established the capability of the CT-121 process to remove over 99% of the boiler`s particulate emissions at 100% boiler load.

Burford, D.P. [Southern Co. Services, Inc., Birmingham, AL (United States); Pearl, I.G. [Radian Corp., Tucker, GA (United States)

1994-12-31T23:59:59.000Z

378

Solar energy system performance evaluation: final report for Honeywell OTS 41, Shenandoah (Newnan), Georgia  

SciTech Connect (OSTI)

The operation and technical performance of the Solar Operational Test Site (OTS 41) located at Shenandoah, Georgia, are described, based on the analysis of data collected between January and August 1981. The following topics are discussed: system description, performance assessment, operating energy, energy savings, system maintenance, and conclusions. The solar energy system at OTS 41 is a hydronic heating and cooling system consisting of 702 square feet of liquid-cooled flat-plate collectors; a 1000-gallon thermal storage tank; a 3-ton capacity organic Rankine-cycle-engine-assisted air conditioner; a water-to-air heat exchanger for solar space heating; a finned-tube coil immersed in the storage tank to preheat water for a gas-fired hot water heater; and associated piping, pumps, valves, and controls. The solar system has six basic modes of operation and several combination modes. The system operation is controlled automatically by a Honeywell-designed microprocessor-based control system, which also provides diagnostics. Based on the instrumented test data monitored and collected during the 7 months of the Operational Test Period, the solar system collected 53 MMBtu of thermal energy of the total incident solar energy of 219 MMBtu and provided 11.4 MMBtu for cooling, 8.6 MMBtu for heating, and 8.1 MMBtu for domestic hot water. The projected net annual energy savings due to the solar system were approximately 50 MMBtu of fossil energy (49,300 cubic feet of natural gas) and a loss of 280 kWh(e) of electrical energy.

Mathur, A K; Pederson, S

1982-08-01T23:59:59.000Z

379

Landesque capital as an alternative to food storage in Melanesia: irrigated taro terraces in New Georgia, Solomon Islands  

E-Print Network [OSTI]

the Lapita littoral fringe, New Georgia, Solomon Islands, pp. 123-40 in Bedford, S., Sand, C. and Connaughton, S.P. (eds.), Oceanic Explorations: Lapita and Western Pacific Settlement. Canberra: Terra Australia 26, ANU E Press. Gollifer, D.E. and Booth... , and the ruta survey team from Mase (Rendol Reke, Leeman Piano, Antony Tupiti and Presah Koba). We are also grateful to Kylie Moloney and Bernadette Hince for their assistance with archival work in Canberra, and Philip Stickler (Cambridge) for his help...

Bayliss-Smith, Tim; Hviding, Edvard

2014-11-07T23:59:59.000Z

380

Engineering Study for a Full Scale Demonstration of Steam Reforming Black Liquor Gasification at Georgia-Pacific's Mill in Big Island, Virginia  

SciTech Connect (OSTI)

Georgia-Pacific Corporation performed an engineering study to determine the feasibility of installing a full-scale demonstration project of steam reforming black liquor chemical recovery at Georgia-Pacific's mill in Big Island, Virginia. The technology considered was the Pulse Enhanced Steam Reforming technology that was developed and patented by Manufacturing and Technology Conversion, International (MTCI) and is currently licensed to StoneChem, Inc., for use in North America. Pilot studies of steam reforming have been carried out on a 25-ton per day reformer at Inland Container's Ontario, California mill and on a 50-ton per day unit at Weyerhaeuser's New Bern, North Carolina mill.

Robert De Carrera; Mike Ohl

2002-03-19T23:59:59.000Z

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381

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network [OSTI]

Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

Carroll, James Mason

2012-06-07T23:59:59.000Z

382

Local control of magnetocrystalline anisotropy in (Ga,Mn)As microdevices: Demonstration in current-induced switching  

E-Print Network [OSTI]

The large saturation magnetization in conventional dense moment ferromagnets offers a flexible means of manipulating the ordered state through demagnetizing shape anisotropy fields, but these dipolar fields, in turn, limit the integrability...

Wunderlich, J.; Irvine, A. C.; Zemen, J.; Holy, V.; Rushforth, A. W.; De Ranieri, E.; Rana, U.; Vyborny, K.; Sinova, Jairo; Foxon, C. T.; Campion, R. P.; Williams, D. A.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

383

Hydrothermal synthesis and catalytic properties of {alpha}- and {beta}-MnO{sub 2} nanorods  

SciTech Connect (OSTI)

One-dimensional {alpha}-MnO{sub 2} and {beta}-MnO{sub 2} single-crystalline nanostructures were prepared by hydrothermal process. The products were characterized in detail by multiform techniques: X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Experimental results indicate that the temperature plays important roles in determining produce {alpha}-MnO{sub 2} and {beta}-MnO{sub 2} nanorods. In addition, the as-prepared {alpha}-MnO{sub 2} and {beta}-MnO{sub 2} nanorods showed excellent catalytic performance in the Fenton-like reaction.

Cao, Guangsheng, E-mail: daqingcgs@163.com [Key Laboratory of Enhanced Oil and Gas Recovery of Ministry of Education, Daqing Petroleum Institute, Daqing 163318 (China)] [Key Laboratory of Enhanced Oil and Gas Recovery of Ministry of Education, Daqing Petroleum Institute, Daqing 163318 (China); Su, Ling; Zhang, Xiaojuan; Li, Hui [Key Laboratory of Enhanced Oil and Gas Recovery of Ministry of Education, Daqing Petroleum Institute, Daqing 163318 (China)] [Key Laboratory of Enhanced Oil and Gas Recovery of Ministry of Education, Daqing Petroleum Institute, Daqing 163318 (China)

2010-04-15T23:59:59.000Z

384

A comparative study of magnetic behaviors in TbNi{sub 2}, TbMn{sub 2} and TbNi{sub 2}Mn  

SciTech Connect (OSTI)

All TbNi{sub 2}, TbMn{sub 2}, and TbNi{sub 2}Mn compounds exhibit the cubic Laves phase with AB{sub 2}-type structure in spite of the fact that the ratio of the Tb to transition-metal components in TbNi{sub 2}Mn is 1:3. Rietveld refinement indicates that in TbNi{sub 2}Mn the Mn atoms are distributed on both the A (8a) and B (16d) sites. The values of the lattice constants were measured to be a?=?14.348?Å (space group F-43?m), 7.618?Å, and 7.158?Å (space group Fd-3?m) for TbNi{sub 2}, TbMn{sub 2}, and TbNi{sub 2}Mn, respectively. The magnetic transition temperatures T{sub C} were found to be T{sub C}?=?38?K and T{sub C}?=?148?K for TbNi{sub 2} and TbNi{sub 2}Mn, respectively, while two magnetic phase transitions are detected for TbMn{sub 2} at T{sub 1}?=?20?K and T{sub 2}?=?49?K. Clear magnetic history effects in a low magnetic field are observed in TbMn{sub 2} and TbNi{sub 2}Mn. The magnetic entropy changes have been obtained.

Wang, J. L., E-mail: jianli@uow.edu.au [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Bragg Institute, ANSTO, Lucas Heights, NSW 2234 (Australia); Md Din, M. F.; Hong, F.; Cheng, Z. X.; Dou, S. X. [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Kennedy, S. J.; Studer, A. J. [Bragg Institute, ANSTO, Lucas Heights, NSW 2234 (Australia); Campbell, S. J. [School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, Canberra, ACT 2600 (Australia); Wu, G. H. [Institute of Physics, Chinese Academy of Science, Beijing 100190 (China)

2014-05-07T23:59:59.000Z

385

Height stabilization of GaSb/GaAs quantum dots by Al-rich capping  

SciTech Connect (OSTI)

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-09-01T23:59:59.000Z

386

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates  

SciTech Connect (OSTI)

The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

2013-05-07T23:59:59.000Z

387

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

388

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network [OSTI]

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

389

AlGaAs/GaAs photovoltaic converters for high power narrowband radiation  

SciTech Connect (OSTI)

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

2014-09-26T23:59:59.000Z

390

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

391

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

392

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

393

Mn-Fe base and Mn-Cr-Fe base austenitic alloys  

DOE Patents [OSTI]

Manganese-iron base and manganese-chromium-iron base austenitic alloys designed to have resistance to neutron irradiation induced swelling and low activation have the following compositions (in weight percent): 20 to 40 Mn; up to about 15 Cr; about 0.4 to about 3.0 Si; an austenite stabilizing element selected from C and N, alone or in combination with each other, and in an amount effective to substantially stabilize the austenite phase, but less than about 0.7 C, and less than about 0.3 N; up to about 2.5 V; up to about 0.1 P; up to about 0.01 B; up to about 3.0 Al; up to about 0.5 Ni; up to about 2.0 W; up to about 1.0 Ti; up to about 1.0 Ta; and with the remainder of the alloy being essentially iron.

Brager, Howard R. (Richland, WA); Garner, Francis A. (Richland, WA)

1987-01-01T23:59:59.000Z

394

Point defect balance in epitaxial GaSb  

SciTech Connect (OSTI)

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

2014-08-25T23:59:59.000Z

395

LiMnPO4 Nanoplate Grown via Solid-State Reaction in Molten Hydrocarbon...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

LiMnPO4 Nanoplate Grown via Solid-State Reaction in Molten Hydrocarbon for Li-ion Battery Cathode. LiMnPO4 Nanoplate Grown via Solid-State Reaction in Molten Hydrocarbon for Li-ion...

396

Electrodeposited Al-Mn Alloys with Microcrystalline, Nanocrystalline, Amorphous and Nano-quasicrystalline Structures  

E-Print Network [OSTI]

Al–Mn alloys with Mn content ranging from 0 to 15.8 at.% are prepared by electrodeposition from an ionic liquid at room temperature, and exhibit a remarkably broad range of structures. The alloys are characterized through ...

Ruan, Shiyun

397

Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge  

E-Print Network [OSTI]

Li, A. P. et al. Magnetism in Mn x Ge 1-x semiconductorsElectronic Structure and Magnetism for Mn in Amorphous Sistructure that determines magnetism. Figure 3 shows XAS data

Zeng, Li

2010-01-01T23:59:59.000Z

398

Mn12-acetate thin film patterns and their interaction with superconductors  

E-Print Network [OSTI]

Mn12-acetate single-molecule magnets (SMMs) are nano-scale magnets showing a strong magnetic anisotropy, slow relaxation and stepwise magnetic hysteresis curves. Possible applications of Mn12-acetate, e.g. for ultra high density magnetic information...

Kim, Kyongwan

2009-05-15T23:59:59.000Z

399

On deformation twinning in a 17.5%Mn-TWIP steel: A physically...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

On deformation twinning in a 17.5%Mn-TWIP steel: A physically-based phenomenological model. On deformation twinning in a 17.5%Mn-TWIP steel: A physically-based phenomenological...

400

Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance  

SciTech Connect (OSTI)

In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

Dai, Qilin; Wang, Wenyong, E-mail: wwang5@uwyo.edu, E-mail: jtang2@uwyo.edu; Tang, Jinke, E-mail: wwang5@uwyo.edu, E-mail: jtang2@uwyo.edu [Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071 (United States); Sabio, Erwin M. [Department of Chemistry, University of Wyoming, Laramie, Wyoming 82071 (United States)

2014-05-05T23:59:59.000Z

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Engineering the magnetic properties of the Mn13 cluster by doping  

E-Print Network [OSTI]

With a goal to produce a giant magnetic moment in a Mn13 cluster that will be useful for practical applications, we have considered the structure and magnetic properties of a pure Mn13 cluster and substitutionally doped ...

Datta, Soumendu

402

X-ray absorption study of the electronic structure of Mn-doped amorphous Si  

E-Print Network [OSTI]

X-ray absorption study of the electronic structure of Mn-?x ) is studied by X-ray absorption spectroscopy at the Mn Land featureless L 3,2 absorption peaks, corresponding to an

Zeng, Li

2008-01-01T23:59:59.000Z

403

E-Print Network 3.0 - al fe mn Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

National Cheng Kung University Collection: Physics 4 Valence states of transition-metal ions in cubic perovskites SrMn1-xFexO3 H. J. Lee,a Summary: the Mn 3d resonance and...

404

Effect of Composition and Heat Treatment on MnBi Magnetic Materials...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Abstract: The metallic compound MnBi is a promising rare-earth-free permanent magnet material. Compare to other rare-earth-free candidates, MnBi stands out for its high...

405

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents [OSTI]

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

406

Guidelines: Advance of Funds on Foreign Subcontracts Modified 12/10/10 In general, it is the University of Georgia's policy to deny advance payments to  

E-Print Network [OSTI]

for the University. However, in exceptional circumstances, it may be necessary to advance funds to subcontractors to ensure that all unspent funds are returned to the University of Georgia's Contracts and Grants DivisionGuidelines: Advance of Funds on Foreign Subcontracts Modified 12/10/10 Background In general

Arnold, Jonathan

407

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

and Environmental Sciences / Athens, Georgia 30602-4356 NOVEMBER 2006 COMMERCIAL EGG TIP . . . BIOFUELS AND POULTRY PRODUCTION The generation of biofuels using current technology (ethanol from the fermentation of corn gain. As the production of biofuels has become established public policy, it is not surprising

Navara, Kristen

408

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

of surface waters, and can lead to changes in species composition within land and water ecosystems. AmmoniaPUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S to the formation of acid rain, which can damage sensitive ecosystems. In areas where nitrogen is a limiting

Navara, Kristen

409

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

work force.. The University of Georgia Cooperative Extension Service College of Agricultural floor with a couple of rows of concrete blocks forming the base of the wall will help prevent rodents brings in oxygen while excess moisture, ammonia, heat and CO2 are removed as the air exits the house

Navara, Kristen

410

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

work force.. The University of Georgia Cooperative Extension Service College of Agricultural birds include depressed appetite, incoordination, leg weakness, dark skin lesions coupled with edema) Disinfectants and heat: When outbreaks occur, bacteria load can be reduced between flocks by removing old litter

Navara, Kristen

411

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

work force.. The University of Georgia Cooperative Extension Service College of Agricultural begins long before the birds enter the facility. Proper management of chickens in the field, coupled of food at night and not as much during the heat of the day, which throws off their feed withdrawal

Navara, Kristen

412

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

.S. Department of Agriculture and counties of the state cooperating. The Cooperative Extension service officers work force.. The University of Georgia Cooperative Extension Service College of Agricultural of electives to tailor their educational program to their specific needs. Students are encouraged to obtain

Navara, Kristen

413

Proceedings of the Sixteenth Annual Conference of the Cognitive Science Society, 1994. Atlanta, Georgia, August 13-16, 876-881.  

E-Print Network [OSTI]

, Georgia, August 13-16, 876-881. Simulated Perceptual Grouping: An Application to Human-Computer are explained. Keywords: Perceptual grouping, gestalt perception, multi-modal, simulation, human-computer. This paper describes a general computational model of perceptual grouping and discusses its use in human-computer

Thórisson, Kristinn Rúnar

414

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

educational programs, assistance and materials to all people without regard to race, color, national origin and Environmental Sciences / Athens, Georgia 30602-4356 NOVEMBER 2002 BROILER TIP . . . COST-SHARE ASSISTANCE CAN to ensure that adequate water will always be available, especially in hot weather. Having a backup source

Navara, Kristen

415

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

educational programs, assistance and materials to all people without regard to race, color, national origin FLOCK IN COLD WEATHER Because of the long, hot, humid summers we experience in Georgia, it is natural. By contrast, when winter weather is reasonably clear and dry, poultry feed is much more stable. However

Navara, Kristen

416

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

educational programs, assistance and materials to all people without regard to race, color, national origin and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2007 BROILER TIP . . . KEEPING BIRDS COOL IN HOT WEATHER. As warmer weather approaches, the threat of heat stress increases. Poultry producers need to anticipate

Navara, Kristen

417

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

educational programs, assistance and materials to all people without regard to race, color, national origin and Environmental Sciences / Athens, Georgia 30602-4356 MARCH 2007 BACKYARD FLOCK TIP . . . LIGHTING PROGRAMS. Much of this is Mother Nature's way of ensuring that the chicks would be reared in warmer weather

Navara, Kristen

418

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

in soils and risk of water contamination is complex. For nutrient management planning, a simple calculation Characteristics, Site Transport Characteristics, and Best Management Practices. Site Source Characteristics and Environmental Sciences / Athens, Georgia 30602-4356 JULY 2000 COMMERCIAL EGG TIP... THE PHOSPHOROUS INDEX

Navara, Kristen

419

PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.  

E-Print Network [OSTI]

selected based on importance of legal risk, potential cost, or environmental damage. In order to meet and Environmental Sciences / Athens, Georgia 30602-4356 JULY 2002 BROILER TIP . . . AGRICULTURAL ENVIRONMENTAL MANAGEMENT SYSTEMS In this age of expanding environmental scrutiny, management strategies that have

Navara, Kristen

420

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure  

SciTech Connect (OSTI)

Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

2014-03-21T23:59:59.000Z

422

Novel frustrated magnetic lattice based on triangular [Mn3(m3-F)] clusters with tetrazole ligands{  

E-Print Network [OSTI]

Novel frustrated magnetic lattice based on triangular [Mn3(m3-F)] clusters with tetrazole ligands701840a Unprecedented [MnII 3(m3-F)(m-N­N)3] triangular clusters with tetrazole ligands are linked by Mn the tetrazolate ligands, which possess additional N-donor sites for network formation. To our knowledge, [M3(m3-X

Gao, Song

423

On the role of Mn(IV) vacancies in the photoreductive dissolution of hexagonal birnessite  

SciTech Connect (OSTI)

Photoreductive dissolution of layer type Mn(IV) oxides (birnessite) under sunlight illumination to form soluble Mn(II) has been observed in both field and laboratory settings, leading to a consensus that this process is a key driver of the biogeochemical cycling of Mn in the euphotic zones of marine and freshwater ecosystems. However, the underlying mechanisms for the process remain unknown, although they have been linked to the semiconducting characteristics of hexagonal birnessite, the ubiquitous Mn(IV) oxide produced mainly by bacterial oxidation of soluble Mn(II). One of the universal properties of this biogenic mineral is the presence of Mn(IV) vacancies, long-identified as strong adsorption sites for metal cations. In this paper, the possible role of Mn vacancies in photoreductive dissolution is investigated theoretically using quantum mechanical calculations based on spin-polarized density functional theory (DFT). Our DFT study demonstrates unequivocally that Mn vacancies significantly reduce the band-gap energy for hexagonal birnessite relative to a hypothetical vacancy-free MnO{sub 2} and thus would increase the concentration of photo-induced electrons available for Mn(IV) reduction upon illumination of the mineral by sunlight. Calculations of the charge distribution in the presence of vacancies, although not fully conclusive, show a clear separation of photo-induced electrons and holes, implying a slow recombination of these charge-carriers that facilitates the two-electron reduction of Mn(IV) to Mn(II).

Kwon, K.D.; Refson, K.; Sposito, G.

2009-06-01T23:59:59.000Z

424

Cationic disorder and Mn{sup 3+}/Mn{sup 4+} charge ordering in the B? and B? sites of Ca{sub 3}Mn{sub 2}NbO{sub 9} perovskite: a comparison with Ca{sub 3}Mn{sub 2}WO{sub 9}  

SciTech Connect (OSTI)

We describe the preparation, crystal structure determination, magnetic and transport properties of two novel Mn-containing perovskites, with a different electronic configuration for Mn atoms located in B site. Ca{sub 3}Mn{sup 3+}{sub 2}WO{sub 9} and Ca{sub 3}Mn{sup 3+/4+}{sub 2}NbO{sub 9} were synthesized by standard ceramic procedures; the crystallographic structure was studied from X-ray powder diffraction (XRPD) and neutron powder diffraction (NPD). Both phases exhibit a monoclinic symmetry (S.G.: P2{sub 1}/n); Ca{sub 3}Mn{sub 2}WO{sub 9} presents a long-range ordering over the B sites, whereas Ca{sub 3}Mn{sub 2}NbO{sub 9} is strongly disordered. By “in-situ” NPD, the temperature evolution of the structure study presents an interesting evolution in the octahedral size (?Mn–O?) for Ca{sub 3}Mn{sub 2}NbO{sub 9}, driven by a charge ordering effect between Mn{sup 3+} and Mn{sup 4+} atoms, related to the anomaly observed in the transport measurements at T?160 K. Both materials present a magnetic order below T{sub C}=30 K and 40 K for W and Nb materials, respectively. The magneto-transport measurements display non-negligible magnetoresistance properties in the paramagnetic regime. - Graphical abstract: Comparison between the octahedron size and the magnetic behaviour for Ca{sub 3}Mn{sub 2}NbO{sub 9} in the temperature region where the charge and magnetic order occur. Display Omitted - Highlights: • Two novel Mn-containing double perovskites were obtained by solid-state reactions. • Both double perovskites are monoclinic (P2{sub 1}/n) determined by XRPD and NPD. • Ca{sub 3}Mn{sub 2}WO{sub 9} contains Mn{sup 3+} while Ca{sub 3}Mn{sub 2}NbO{sub 9} includes mixed-valence cations Mn{sup 3+}/Mn{sup 4+}. • Ca{sub 3}Mn{sub 2}NbO{sub 9} presents a charge-ordering effect between Mn{sup 3+} and Mn{sup 4+} evidenced by NPD. • The magnetic and transport studies evidenced the charge ordering in Ca{sub 3}Mn{sub 2}NbO{sub 9}.

López, C.A., E-mail: calopez@unsl.edu.ar [INTEQUI-Área de Química General e Inorgánica “Dr. G. F. Puelles”, Facultad de Química, Bioquímica y Farmacia, Universidad Nacional de San Luis, Chacabuco y Pedernera, 5700 San Luis (Argentina); Centro Atómico Bariloche, Comisión Nacional de Energía Atómica and Instituto Balseiro, Universidad Nacional de Cuyo, 8400S.C. de Bariloche, Río Negro (Argentina); Saleta, M.E. [Centro Atómico Bariloche, Comisión Nacional de Energía Atómica and Instituto Balseiro, Universidad Nacional de Cuyo, 8400S.C. de Bariloche, Río Negro (Argentina); Pedregosa, J.C. [INTEQUI-Área de Química General e Inorgánica “Dr. G. F. Puelles”, Facultad de Química, Bioquímica y Farmacia, Universidad Nacional de San Luis, Chacabuco y Pedernera, 5700 San Luis (Argentina); Sánchez, R.D. [Centro Atómico Bariloche, Comisión Nacional de Energía Atómica and Instituto Balseiro, Universidad Nacional de Cuyo, 8400S.C. de Bariloche, Río Negro (Argentina); Alonso, J.A. [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid (Spain); and others

2014-02-15T23:59:59.000Z

425

Growing the renewable chemicals and advanced biofuels cluster in MN  

E-Print Network [OSTI]

Growing the renewable chemicals and advanced biofuels cluster in MN #12;Renewable Chemical Value% Reduction 60% Reduction 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% Gasoline Corn Ethanol Advanced Biofuel Cellulosic Biofuel Corn Ethanol 20% GHG Reduction Compared to gasoline: Advanced Biofuel 50% GHG Reduction e

Levinson, David M.

426

Electronic interactions between gold films and mn12-acetate  

E-Print Network [OSTI]

the presence of a surface layer of Mn12–acetate, have been performed using a dilution refrigerator. Quantitative fits to the data using the predictions of weak localization theory were performed using a least-squares fit method in order to determine...

Means, Joel Lewis

2009-05-15T23:59:59.000Z

427

Mn/DOT's Ombudsman Program Collaboration and Process  

E-Print Network [OSTI]

Mn/DOT's Ombudsman Program Collaboration and Process #12;Overview Ombudsman exists to rebuild trust on the environmental and municipal consent processes can be critical #12;A Large Organization #12;Tragedy;Ombudsman Does Not... ·! Advocate for one party or point of view ·! Own any formal process or policy

Minnesota, University of

428

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

429

0 1 2 3 4 5 Fig. S1. Core photograph combined with Ca, Mn, Fe counts and Mn/Fe ratio determined by XRF core  

E-Print Network [OSTI]

1. Core photograph combined with Ca, Mn, Fe counts and Mn/Fe ratio determined by XRF core scanning determined by XRF core scanning on core ZH10-19 from Lake Zurich recovered in 135 m water depth (2 m above counts and Mn/Fe ratio determined by XRF core scanning on core ZH10-21 from Lake Zurich recovered in 123

Gilli, Adrian

430

Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells  

SciTech Connect (OSTI)

In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-01-07T23:59:59.000Z

431

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

432

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

433

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

434

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

435

Wavelength limits for InGaN quantum wells on GaN  

SciTech Connect (OSTI)

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

2013-06-17T23:59:59.000Z

436

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

1992-01-01T23:59:59.000Z

437

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

1992-08-01T23:59:59.000Z

438

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces  

SciTech Connect (OSTI)

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-08-12T23:59:59.000Z

439

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots  

SciTech Connect (OSTI)

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-15T23:59:59.000Z

440

AlGaAs/GaAs quantum well infrared detectors and modulators  

E-Print Network [OSTI]

to the quantum well. This optical transition wavelength lies in the mid infrared region of the spectrum. To get a more realistic picture of the optical transition in a 1-D quantum well, the non-parabolicity of the conduction band of GaAs is taken... into consideration. Further it is seen that with the change in temperature and doping concentration the width and peak of the absorption curve also changes. Based on the above calculations and results an AIGaAs/GaAs quantum well infrared photodetector...

Dave, Digant Praful

1990-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

PHYSICAL REVIEW B 84, 205305 (2011) Spin-phonon coupling in single Mn-doped CdTe quantum dot  

E-Print Network [OSTI]

PHYSICAL REVIEW B 84, 205305 (2011) Spin-phonon coupling in single Mn-doped CdTe quantum dot C. L dynamics of a single Mn atom in a laser driven CdTe quantum dot is addressed theoretically. Recent of single Mn-doped CdTe dots, information about the quantum spin state of a single Mn atom is extracted from

Paris-Sud XI, Université de

442

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

443

Plutonium Oxidation and Subsequent Reduction by Mn (IV) Minerals  

SciTech Connect (OSTI)

Plutonium sorbed to rock tuff was preferentially associated with manganese oxides. On tuff and synthetic pyrolusite (Mn{sup IV}O{sub 2}), Pu(IV) or Pu(V) was initially oxidized, but over time Pu(IV) became the predominant oxidation state of sorbed Pu. Reduction of Pu(V/VI), even on non-oxidizing surfaces, is proposed to result from a lower Gibbs free energy of the hydrolyzed Pu(IV) surface species versus that of the Pu(V) or Pu(VI) surface species. This work suggests that despite initial oxidation of sorbed Pu by oxidizing surfaces to more soluble forms, the less mobile form of Pu, Pu(IV), will dominate Pu solid phase speciation during long term geologic storage. The safe design of a radioactive waste or spent nuclear fuel geologic repository requires a risk assessment of radionuclides that may potentially be released into the surrounding environment. Geochemical knowledge of the radionuclide and the surrounding environment is required for predicting subsurface fate and transport. Although difficult even in simple systems, this task grows increasingly complicated for constituents, like Pu, that exhibit complex environmental chemistries. The environmental behavior of Pu can be influenced by complexation, precipitation, adsorption, colloid formation, and oxidation/reduction (redox) reactions (1-3). To predict the environmental mobility of Pu, the most important of these factors is Pu oxidation state. This is because Pu(IV) is generally 2 to 3 orders of magnitude less mobile than Pu(V) in most environments (4). Further complicating matters, Pu commonly exists simultaneously in several oxidation states (5, 6). Choppin (7) reported Pu may exist as Pu(IV), Pu(V), or Pu(VI) oxic natural groundwaters. It is generally accepted that plutonium associated with suspended particulate matter is predominantly Pu(IV) (8-10), whereas Pu in the aqueous phase is predominantly Pu(V) (2, 11-13). The influence of the character of Mn-containing minerals expected to be found in subsurface repository environments on Pu oxidation state distributions has been the subject of much recent research. Kenney-Kennicutt and Morse (14), Duff et al. (15), and Morgenstern and Choppin (16) observed oxidation of Pu facilitated by Mn(IV)-bearing minerals. Conversely, Shaughnessy et al. (17) used X-ray Absorption near-edge spectroscopy (XANES) to show reduction of Pu(VI) by hausmannite (Mn{sup II}Mn{sub 2}{sup III}O{sub 4}) and manganite ({gamma}-Mn{sup III}OOH) and Kersting et al., (18) observed reduction of Pu(VI) by pyrolusite (Mn{sup IV}O{sub 2}). In this paper, we attempt to reconcile the apparently conflicting datasets by showing that Mn-bearing minerals can indeed oxidize Pu, however, if the oxidized species remains on the solid phase, the oxidation step competes with the formation of Pu(IV) that becomes the predominant solid phase Pu species with time. The experimental approach we took was to conduct longer term (approximately two years later) oxidation state analyses on the Pu sorbed to Yucca Mountain tuff (initial analysis reported by Duff et al., (15)) and measure the time-dependant changes in the oxidation state distribution of Pu in the presence of the Mn mineral pyrolusite.

KAPLAN, DANIEL

2005-09-13T23:59:59.000Z

444

Effect of Composition and Heat Treatment on MnBi Magnetic Materials  

SciTech Connect (OSTI)

The metallic compound MnBi is a promising rare-earth-free permanent magnet material. Compare to other rare-earth-free candidates, MnBi stands out for its high intrinsic coercivity (Hci) and its large positive temperature coefficient. Several groups have demonstrated that the Hci of MnBi compound in thin film or in powder form can exceed 12 kOe and 26 kOe at 300 K and 523 K, respectively. Such steep increase in Hci with increasing temperature is unique to MnBi. Consequently, MnBi is a highly sought-after hard phase for exchange coupling nanocomposite magnets. The reaction between Mn and Bi is peritectic, so Mn tends to precipitate out of the MnBi liquid during the solidification process. As result, the composition of the Mn-Bi alloy with the largest amount of the desired LTP (low temperature phase) MnBi and highest saturation magnetization will be over-stoichiometric and rich in Mn. The amount of additional Mn required to compensate the Mn precipitation depends on solidification rate: the faster the quench speed, the less Mn precipitates. Here we report a systematic study of the effect of composition and heat treatments on the phase contents and magnetic properties of Mn-Bi alloys. In this study, Mn-Bi alloys with 14 compositions were prepared using conventional metallurgical methods such as arc melting and vacuum heat treatment, and the obtained alloys were analyzed for compositions, crystal structures, phase content, and magnetic properties. The results show that the composition with 55 at.% Mn exhibits the highest LTP MnBi content and the highest magnetization. The sample with this composition shows >90 wt.% LTP MnBi content. Its measured saturation magnetization is 68 emu/g with 2.3 T applied field at 300 K; its coercivity is 13 kOe and its energy product is 12 MGOe at 300 K. A bulk magnet fabricated using this powder exhibits an energy product of 8.2 MGOe.

Cui, Jun; Choi, Jung-Pyung; Polikarpov, Evgueni; Bowden, Mark E.; Xie, Wei; Li, Guosheng; Nie, Zimin; Zarkevich, Nikolai; Kramer, Matthew J.; Johnson, Duane D.

2014-08-17T23:59:59.000Z

445

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

446

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

447

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network [OSTI]

information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

Hyman, Bruce Carl

1999-01-01T23:59:59.000Z

448

General Atomics (GA) | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsorGeneral Atomics (GA)

449

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:

450

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

451

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat  

E-Print Network [OSTI]

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

Shepelyansky, Dima

452

Charge transport properties of CdMnTe radiation detectors  

SciTech Connect (OSTI)

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

2012-04-11T23:59:59.000Z

453

High-Resolution Mn EXAFS of the Oxygen-Evolving Complex inPhotosystem II: Structural Implications for the Mn4Ca Cluster  

SciTech Connect (OSTI)

The biological generation of oxygen by the oxygen-evolving complex in photosystem II (PS II) is one of natures most important reactions. The recent X-ray crystal structures, while limited by resolutions of 3.2 to 3.5 A, have located the electron density associated with the Mn4Ca complex within the multi-protein PS II complex. Detailed structures critically depend on input from spectroscopic techniques such as EXAFS and EPR/ENDOR, as the XRD resolution does not allow for accurate determination of the position of Mn/Ca or the bridging and terminal ligand atoms. The number and distances of Mn-Mn/Ca/ligand interactions determined from EXAFS provide important constraints for the structure of the Mn cluster. Here we present data from a high-resolution EXAFS method using a novel multi-crystal monochromator that show three short Mn-Mn distances between 2.7 and 2.8 A and hence the presence of three di-mu-oxobridged units in the Mn4Ca cluster. This result imposes clear limitations on the proposed structures based on spectroscopic and diffraction data and provides input for refining such structures.

Yano, Junko; Pushkar, Yulia; Glatzel, Pieter; Lewis, Azul; Sauer,Kenneth; Messinger, Johannes; Bergmann, Uwe; Yachandra, Vittal

2005-09-06T23:59:59.000Z

454

Ferromagnetic Mn moments at SrRuO3/SrMnO3 interfaces Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439  

E-Print Network [OSTI]

Ferromagnetic Mn moments at SrRuO3/SrMnO3 interfaces Y. Choia Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 Y. Z. Yoo, O. Chmaissem, A. Ullah, S. Kolesnik, and C. W University, DeKalb, Illinois 60115 D. Haskel Advanced Photon Source, Argonne National Laboratory, Argonne

Haskel, Daniel

455

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Broader source: Energy.gov (indexed) [DOE]

current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

456

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

457

Effect of composition and heat treatment on MnBi magnetic materials  

SciTech Connect (OSTI)

The metallic compound MnBi is a promising rare-earth-free permanent magnet material, unique among all candidates for its high intrinsic coercivity (Hci) and its large positive temperature coefficient. The Hci of MnBi in thin-film or powder form can exceed 12 and 26 kOe at 300 and 523 K, respectively. Such a steep rise in Hci with increasing temperature is unique to MnBi. Consequently, MnBi is a highly sought-after hard phase for exchange coupling nanocomposite magnets. However, the reaction between Mn and Bi is peritectic, and hence Mn tends to precipitate out of the MnBi liquid during the solidification process. As result, when the alloy is prepared using conventional induction or arc-melting casting methods, additional Mn is required to compensate the precipitation of Mn. In addition to composition, post-casting annealing plays an important role in obtaining a high content of MnBi low-temperature phase (LTP) because the annealing encourages the Mn precipitates and the unreacted Bi to react, forming the desired LTP phase. Here we report a systematic study of the effect of composition and heat treatments on the phase content and magnetic properties of Mn–Bi alloys. In this study, 14 compositions were prepared using conventional metallurgical methods, and the compositions, crystal structures, phase content and magnetic properties of the resulting alloys were analyzed. The results show that the composition with 55 at.% Mn exhibits both the highest LTP content (93 wt.%) and magnetization (74 emu g?1 with 9 T applied field at 300 K).

Cui, Jun [Pacific Northwest National Laboratory; Choi, Jung-Pyung [Pacific Northwest National Laboratory; Polikarpov, Evgueni [Pacific Northwest National Laboratory; Bowden, Mark E [Pacific Northwest National Laboratory; Xie, Wei [Pacific Northwest National Laboratory; Li, Guosheng [Pacific Northwest National Laboratory; Nie, Zimin [Pacific Northwest National Laboratory; Zarkevich, Nikolai [Ames Laboratory; Kramer, Matthew J [Ames Laboratory; Johnson, Duane [Ames Laboratory

2014-10-01T23:59:59.000Z

458

DOPING AND BOND LENGTH CONTRIBUTIONS TO Mn K-EDGE SHIFT IN La1-xSrxMnO3 AND THEIR CORRELATION WITH ELECTRICAL TRANSPORT BEHAVIOUR.  

SciTech Connect (OSTI)

The experimental Mn K-edge x-ray absorption spectra of La{sub 1-x}Sr{sub x}MnO{sub 3}, x = 0 - 0.7 are compared with the band structure calculations using spin polarized density functional theory. It is explicitly shown that there is a correspondence between the inflection point on the absorption edge and the center of gravity of the unoccupied Mn 4p-band. This correspondence has been used to separate the doping and size contributions to edge shift due to variation in number of electrons in valence band and Mn-O bond lengths, respectively when Sr is doped into LaMnO{sub 3}. Such separation is helpful to find the localization behavior of charge carriers and to understand the observed transport properties and type of charge carrier participating in the conduction process in these compounds.

PANDEY,S.K.; KHALID,S.; BINDU, R.; KUMAR, A.; PIMPALE, A.V.

2006-12-04T23:59:59.000Z

459

The design, construction, and monitoring of photovoltaic power system and solar thermal system on the Georgia Institute of Technology Aquatic Center. Volume 1  

SciTech Connect (OSTI)

This is a report on the feasibility study, design, and construction of a PV and solar thermal system for the Georgia Tech Aquatic Center. The topics of the report include a discussion of site selection and system selection, funding, design alternatives, PV module selection, final design, and project costs. Included are appendices describing the solar thermal system, the SAC entrance canopy PV mockup, and the PV feasibility study.

Long, R.C.

1996-12-31T23:59:59.000Z

460

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

" FL Water Law Regulated Riparianism "Heavy" Admin Water Law ? #12;Comprehensive Water Resource Study Supply a. Water Allocation ­ Withdrawal Permit Program b. Water Storage & Delivery c. Interbasin TransferThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

462

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures  

E-Print Network [OSTI]

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In

Luryi, Serge

463

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

464

Elastic properties of Pu metal and Pu-Ga alloys  

SciTech Connect (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

465

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

466

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach  

E-Print Network [OSTI]

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

Itoh, Tatsuo

467

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

468

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

469

Fabrication of quantum point contacts by engraving GaAsAlGaAs heterostructures with a diamond tip  

E-Print Network [OSTI]

by hot-filament chemical vapor deposition of polycrystalline diamond onto a prepat- terned siliconFabrication of quantum point contacts by engraving GaAsÕAlGaAs heterostructures with a diamond tip for publication 17 July 2002 We use the all-diamond tip of an atomic force microscope for the direct engraving

Hohls, Frank

470

OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT  

E-Print Network [OSTI]

on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus

Honsberg, Christiana

471

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

472

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

473

Diffusion of a Ga adatom on the GaAs(001)c(44)heterodimer surface: A first principles study  

E-Print Network [OSTI]

Diffusion of a Ga adatom on the GaAs(001)c(4×4)heterodimer surface: A first principles study J Diffusion barriers Reconstruction Density functional calculations The adsorption and diffusion behavior functional theory (DFT) computations in the local density approxima- tion. Structural and bonding features

Khare, Sanjay V.

474

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields  

E-Print Network [OSTI]

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures with increasing external electric field, with the radiative component exhibiting weaker field dependence. © 2009 applied electric field in Ref. 12, the electric field dependent radiative recombination in particular has

Demir, Hilmi Volkan

475

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a)  

E-Print Network [OSTI]

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a) M. Patrini,1 G; accepted 5 May 2011; published online 20 June 2011) The effect of hydrogen irradiation on the optical for fiber optic communications. These promising results in view of the development of waveguides deserve

476

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

477

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network [OSTI]

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

478

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers  

E-Print Network [OSTI]

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

Wetzel, Christian M.

479

IV. -PHOTOMAGNETISM AND CONDUCT I W r PHOTOMAGNETIC EFFECT IN A Li-Mn FERRITE  

E-Print Network [OSTI]

IV. - PHOTOMAGNETISM AND CONDUCT I W r PHOTOMAGNETIC EFFECT IN A Li-Mn FERRITE P. BERNSTEIN and T'effet photomagnCtique dans le ferrite Fez,I oLi0.45Mn0.4504 au moyen de la variation de la perm investigated in a Fez.loLi0.45Mn0.4504ferrite by looking at the variations of the permeability under light

Paris-Sud XI, Université de

480

Electronic Structure and Oxidation State Changes in the Mn (4) Ca Cluster of Photosystem II  

SciTech Connect (OSTI)

Oxygen-evolving complex (Mn{sub 4}Ca cluster) of Photosystem II cycles through five intermediate states (S{sub i}-states, i = 0-4) before a molecule of dioxygen is released. During the S-state transitions, electrons are extracted from the OEC, either from Mn or alternatively from a Mn ligand. The oxidation state of Mn is widely accepted as Mn{sub 4}(III{sub 2},IV{sub 2}) and Mn{sub 4}(III,IV{sub 3}) for S{sub 1} and S{sub 2} states, while it is still controversial for the S{sub 0} and S{sub 3} states. We used resonant inelastic X-ray scattering (RIXS) to study the electronic structure of Mn{sub 4}Ca complex in the OEC. The RIXS data yield two-dimensional plots that provide a significant advantage by obtaining both K-edge pre-edge and L-edge-like spectra (metal spin state) simultaneously. We have collected data from PSII samples in the each of the S-states and compared them with data from various inorganic Mn complexes. The spectral changes in the Mn 1s2p{sub 3/2} RIXS spectra between the S-states were compared to those of the oxides of Mn and coordination complexes. The results indicate strong covalency for the electronic configuration in the OEC, and we conclude that the electron is transferred from a strongly delocalized orbital, compared to those in Mn oxides or coordination complexes. The magnitude for the S{sub 0} to S{sub 1}, and S{sub 1} to S{sub 2} transitions is twice as large as that during the S{sub 2} to S{sub 3} transition, indicating that the electron for this transition is extracted from a highly delocalized orbital with little change in charge density at the Mn atoms.

Yano, J.; Pushkar, Y.; Messinger, J.; Bergmann, U.; Glatzel, P.; Yachandra, V.K.; /SLAC

2012-08-17T23:59:59.000Z

Note: This page contains sample records for the topic "ga georgia mn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Structural Changes in the Mn(4)Ca Cluster And the Mechanism of Photosynthetic Water Splitting  

SciTech Connect (OSTI)

Photosynthetic water oxidation, where water is oxidized to dioxygen, is a fundamental chemical reaction that sustains the biosphere. This reaction is catalyzed by a Mn{sub 4}Ca complex in the photosystem II (PS II) oxygen-evolving complex (OEC): a multiprotein assembly embedded in the thylakoid membranes of green plants, cyanobacteria, and algae. The mechanism of photosynthetic water oxidation by the Mn{sub 4}Ca cluster in photosystem II is the subject of much debate, although lacking structural characterization of the catalytic intermediates. Biosynthetically exchanged Ca/Sr-PS II preparations and x-ray spectroscopy, including extended x-ray absorption fine structure (EXAFS), allowed us to monitor Mn-Mn and Ca(Sr)-Mn distances in the four intermediate S states, S{sub 0} through S{sub 3}, of the catalytic cycle that couples the one-electron photochemistry occurring at the PS II reaction center with the four-electron water-oxidation chemistry taking place at the Mn{sub 4}Ca(Sr) cluster. We have detected significant changes in the structure of the complex, especially in the Mn-Mn and Ca(Sr)-Mn distances, on the S{sub 2}-to-S{sub 3} and S{sub 3}-to-S{sub 0} transitions. These results implicate the involvement of at least one common bridging oxygen atom between the Mn-Mn and Mn-Ca(Sr) atoms in the O-O bond formation. Because PS II cannot advance beyond the S{sub 2} state in preparations that lack Ca(Sr), these results show that Ca(Sr) is one of the critical components in the mechanism of the enzyme. The results also show that Ca is not just a spectator atom involved in providing a structural framework, but is actively involved in the mechanism of water oxidation and represents a rare example of a catalytically active Ca cofactor.

Pushkar, Y.; Yano, J.; Sauer, K.; Boussac, A.; Yachandra, V.K.

2009-05-21T23:59:59.000Z

482

Structural Changes in the Mn4Ca Cluster and the Mechanism of Photosynthetic Water Splitting  

SciTech Connect (OSTI)

Photosynthetic water oxidation, where water is oxidized to dioxygen, is a fundamental chemical reaction that sustains the biosphere. This reaction is catalyzed by a Mn4Ca complex in the photosystem II (PS II) oxygen-evolving complex (OEC): a multiproteinassembly embedded in the thylakoid membranes of green plants, cyanobacteria, and algae. The mechanism of photosynthetic water oxidation by the Mn4Ca cluster in photosystem II is the subject of much debate, although lacking structural characterization of the catalytic intermediates. Biosynthetically exchanged Ca/Sr-PS II preparations and x-ray spectroscopy, including extended x-ray absorption fine structure (EXAFS), allowed us to monitor Mn-Mn and Ca(Sr)-Mn distances in the four intermediate S states, S0 through S3, of the catalytic cycle that couples the one-electron photochemistry occurring at the PS II reaction center with the four-electron water-oxidation chemistry taking place at the Mn4Ca(Sr) cluster. We have detected significant changes in the structure of the complex, especially in the Mn-Mn and Ca(Sr)-Mn distances, on the S2-to-S3 and S3-to-S0 transitions. These results implicate the involvement of at least one common bridging oxygen atom between the Mn-Mn and Mn-Ca(Sr) atoms in the O-O bond formation. Because PS II cannot advance beyond the S2 state in preparations that lack Ca(Sr), these results show that Ca(Sr) is one of the critical components in the mechanism of the enzyme. The results also show that Ca is not just a spectator atom involved in providing a structural framework, but is actively involved in the mechanism of water oxidation and represents a rare example of a catalytically active Ca cofactor.

Pushkar, Y.; Yano, J.; Sauer, K.; Boussac, A.; Yachandra, V.K.

2007-10-25T23:59:59.000Z

483

Single Nanorod Devices for Battery Diagnostics: A Case Study on LiMn2O4  

E-Print Network [OSTI]

correlate well with the better cycling performance of Al-doped LiMn2O4 in our Li-ion battery tests: LiAl0Single Nanorod Devices for Battery Diagnostics: A Case Study on LiMn2O4 Yuan Yang, Chong Xie nanostructure devices as a powerful new diagnostic tool for batteries with LiMn2O4 nanorod materials

Cui, Yi

484

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings  

SciTech Connect (OSTI)

The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-07-28T23:59:59.000Z

485

Single photon emission from site-controlled InGaN/GaN quantum dots  

SciTech Connect (OSTI)

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10?K.

Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2013-11-04T23:59:59.000Z

486

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

487

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

488

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

489

Preparation and electrochemical properties of lamellar MnO{sub 2} for supercapacitors  

SciTech Connect (OSTI)

Lamellar birnessite-type MnO{sub 2} materials were prepared by changing the pH of the initial reaction system via hydrothermal synthesis. The interlayer spacing of MnO{sub 2} with a layered structure increased gradually when the initial pH value varied from 12.43 to 2.81, while the MnO{sub 2}, composed of {alpha}-MnO{sub 2} and {gamma}-MnO{sub 2}, had a rod-like structure at pH 0.63. Electrochemical studies indicated that the specific capacitance of birnessite-type MnO{sub 2} was much higher than that of rod-like MnO{sub 2} at high discharge current densities due to the lamellar structure with fast intercalation/deintercalation of protons and high utilization of MnO{sub 2}. The initial specific capacitance of MnO{sub 2} prepared at pH 2.81 was 242.1 F g{sup -1} at 2 mA cm{sup -2} in 2 mol L{sup -1} (NH{sub 4}){sub 2}SO{sub 4} aqueous electrolyte. The capacitance increased by about 8.1% of initial capacitance after 200 cycles at a current density of 100 mA cm{sup -2}.

Yan, Jun; Wei, Tong [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China)] [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Cheng, Jie [Research Institute of Chemical Defense, Beijing 100083 (China)] [Research Institute of Chemical Defense, Beijing 100083 (China); Fan, Zhuangjun, E-mail: fanzhj666@163.com [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China)] [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Zhang, Milin [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China)] [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China)

2010-02-15T23:59:59.000Z

490

Metastable phase boundaries of quasicrystalline phases. [Al-Mn; Al-Ru  

SciTech Connect (OSTI)

The melting curve (T/sub 0/) of the metastable icosahedral phase and the liquidus of the decagonal phase of Al-Mn have been obtained for 14 to 22 at. % Mn. Icosahedral Al-Mn has a congruent melting point of 910 +- 20/sup 0/C at 20 at. % Mn, and melts approx.30/sup 0/C lower than crystalline compounds with the same composition. Icosahedral Al/sub 82/Ru/sub 18/ was determined to melt at 1260 +- 30/sup 0/C. These results were obtained by forming single-phase icosahedral alloys with ion beam mixing, and by rapid heating to accurately known temperatures with electron beams.

Follstaedt, D.M.; Knapp, J.A.

1987-01-01T23:59:59.000Z

491

Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge  

SciTech Connect (OSTI)

Transition metals such as Mn generally have large local moments in covalent semiconductors due to their partially filled d shells. However, Mn magnetization in group-IV semiconductors is more complicated than often recognized. Here we report a striking crossover from a quenched Mn moment (<0.1 {mu}{sub B}) in amorphous Si (a-Si) to a large distinct local Mn moment ({ge}3{mu}{sub B}) in amorphous Ge (a-Ge) over a wide range of Mn concentrations (0.005-0.20). Corresponding differences are observed in d-shell electronic structure and the sign of the Hall effect. Density-functional-theory calculations show distinct local structures, consistent with different atomic density measured for a-Si and a-Ge, respectively, and the Mn coordination number N{sub c} is found to be the key factor. Despite the amorphous structure, Mn in a-Si is in a relatively well-defined high coordination interstitial type site with broadened d bands, low moment, and electron (n-type) carriers, while Mn in a-Ge is in a low coordination substitutional type site with large local moment and holes (p-type) carriers. Moreover, the correlation between N{sub c} and the magnitude of the local moment is essentially independent of the matrix; the local Mn moments approach zero when N{sub c} > 7 for both a-Si and a-Ge.

Zeng, Li; Cao, J. X.; Helgren, E.; Karel, J.; Arenholz, E.; Ouyang, Lu; Smith, David J.; Wu, R. Q.; Hellman, F.

2010-06-01T23:59:59.000Z

492

Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure  

SciTech Connect (OSTI)

The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in dielectric constant versus temperature plots around martensitic phase transformation temperature of Ni-Mn-In showed a strain mediated coupling between Ni-Mn-In and PZT layers. The ferroelectric measurement taken at different temperatures exhibits a well saturated and temperature dependent P-E loops with a highest value of P{sub sat}???55 ?C/cm{sup 2} obtained during martensite-austenite transition temperature region of Ni-Mn-In. The stress induced by Ni-Mn-In layer on upper PZT film due to structural transformation from martensite to austenite resulted in temperature modulated Tunability of PZT/Ni-Mn-In heterostructure. A tunability of 42% was achieved at 290?K (structural transition region of Ni-Mn-In) in these heterostructures. I-V measurements taken at different temperatures indicated that ohmic conduction was the main conduction mechanism over a large electric field range in these heterostructures. Magnetic measurement revealed that heterostructure was ferromagnetic at room temperature with a saturation magnetization of ?123?emu/cm{sup 3}. Such multiferroic heterostructures exhibits promising applications in various microelectromechanical systems.

Singh, Kirandeep; Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand (India); Singh, Sushil Kumar [Functional Materials Division, Solid State Physics Lab (SSPL), DRDO, Lucknow Road, Timarpur, Delhi 110054 (India)

2014-09-21T23:59:59.000Z

493

Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well  

SciTech Connect (OSTI)

The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.

Ramesh, V.; Kikuchi, A.; Kishino, K. [Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan); CREST, JST, Saitama 332-0012 (Japan); Funato, M.; Kawakami, Y. [CREST, JST, Saitama 332-0012 (Japan); Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

2010-06-15T23:59:59.000Z

494

Low Cost Inkjet-printing Paper-Based Modules for RFID Sensing and Wireless Applications  

E-Print Network [OSTI]

of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USA 1 arida

Tentzeris, Manos

495

1080 IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, VOL. 9, 2010 Integrated Wideband 2-D and 3-D Transitions  

E-Print Network [OSTI]

are with the Electrical Engineering Department, Georgia Institute of Technology, Atlanta, GA 30332 USA (e-mail: arida

Tentzeris, Manos

496

Choice Based Revenue Management for Parallel Flights  

E-Print Network [OSTI]

Mar 6, 2014 ... We formulate corresponding deterministic (fluid) optimization ... and Systems Engineering, Georgia Institute of Technology, Atlanta, GA ...

Jim Dai

2014-03-06T23:59:59.000Z

497

The center for plant and microbial complex carbohydrates at the University of Georgia Complex Carbohydrate Research Center  

SciTech Connect (OSTI)

Research from the Complex Carbohydrates Research Center at the University of Georgia is presented. Topics include: Structural determination of soybean isoflavones which specifically induce Bradyrhizobium japonicum nodD1 but not the nodYABCSUIJ operon; structural analysis of the lipopolysaccharides (LPSs) from symbiotic mutants of Bradyrhizobium japonicum; structural characterization of lipooligosaccharides from Bradyrhizobium japonicum that are required for the specific nodulation of soybean; structural characterization of the LPSs from R. Leguminosarum biovar phaseoli, the symbiont of bean; characterization of bacteroid-specific LPS epitopes in R. leguminosarum biovar viciae; analysis of the surface polysaccharides of Rhizobium meliloti mutants whose lipopolysaccharides and extracellular polysaccharides can have the same function in symbiosis; characterization of a polysaccharide produced by certain Bradyrhizobium japonicum strains within soybean nodules; structural analysis of a streptococcal adhesin polysaccharide receptor; conformational studies of xyloglucan, the role of the fucosylated side chain in surface-specific cellulose-xyloglucan interactions; the structure of an acylated glucosamine oligosaccharide signal molecule (nod factor) involved in the symbiosis of Rhizobium leguminosarum biovar viciae with its host Vicia sativa; investigating membrane responses induced by oligogalacturonides in cultured cells; the polygalacturonase inhibitor protein; characterization of the self-incompatability glycoproteins from Petunia hybrida; investigation of the cell wall polysaccharide structures of Arabidopsis thaliana; and the glucan inhibition of virus infection of tabacco.

Albersheim, P.; Darvill, A.

1991-08-01T23:59:59.000Z

498

Field dependent emission rates in radiation damaged GaAs  

SciTech Connect (OSTI)

We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

2014-07-07T23:59:59.000Z

499

MN Office of Energy Security | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's Heat JumpIncMAKGalway Bay IEOWCCatcher.pngWavemill <MN Office of Energy

500

Thermal Stability of MnBi Magnetic Materials. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe1 MembersStability of MnBi Magnetic Materials.