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Sample records for ga georgia mn

  1. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  2. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  3. Theory of weak localization in ferromagnetic (Ga,Mn)As 

    E-Print Network [OSTI]

    Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

    2009-01-01

    We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

  4. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  5. Ferromagnetic (Ga,Mn)As nanostructures for spintronic applications

    SciTech Connect (OSTI)

    Wosinski, Tadeusz; Andrearczyk, Tomasz; Figielski, Tadeusz; Makosa, Andrzej; Wrobel, Jerzy; Sadowski, Janusz

    2013-12-04

    Magneto-resistive, cross-like nanostructures have been designed and fabricated by electron-beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As. The nanostructures, composed of two perpendicular nanostripes crossing in the middle of their length, represent four-terminal devices, in which an electric current can be driven through any of the two nanostripes. In these devices, a novel magneto-resistive memory effect, related to a rearrangement of magnetic domain walls in the central part of the device, has been demonstrated. It consists in that the zero-field resistance of a nanostripe depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.

  6. Functional Mn–Mg{sub k} cation complexes in GaN featured by Raman spectroscopy

    SciTech Connect (OSTI)

    Devillers, T. Bonanni, A.; Leite, D. M. G.; Department of Physics, São Paulo State University, Bauru–SP ; Dias da Silva, J. H.

    2013-11-18

    The evolution of the optical branch in the Raman spectra of (Ga,Mn)N:Mg epitaxial layers as a function of the Mn and Mg concentrations, reveals the interplay between the two dopants. We demonstrate that the various Mn-Mg-induced vibrational modes can be understood in the picture of functional Mn–Mg{sub k} complexes formed when substitutional Mn cations are bound to k substitutional Mg through nitrogen atoms, the number of ligands k being driven by the ratio between the Mg and the Mn concentrations.

  7. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  8. Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors 

    E-Print Network [OSTI]

    Jungwirth, T.; Wang, KY; Masek, J.; Edmonds, KW; Konig, J.; Sinova, Jairo; Polini, M.; Goncharuk, NA; MacDonald, AH; Sawicki, M.; Rushforth, AW; Campion, RP; Zhao, LX; Foxon, CT; Gallagher, BL.

    2005-01-01

    We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T-c in high...

  9. Understanding and development of combined acoustic and magnetic actuation of Ni?MnGa single crystals

    E-Print Network [OSTI]

    Techapiesancharoenkij, Ratchatee, 1979-

    2007-01-01

    Ni-Mn-Ga based ferromagnetic shape memory alloys (FSMAs) have emerged as a promising new class of active materials capable of producing a large (several %) magnetic-field-induced strain (MFIS). FSMAs still have several ...

  10. Growth of GaMnAs under near-stoichiometric conditions

    SciTech Connect (OSTI)

    Avrutin, V.; Humienik, D.; Frank, S.; Koeder, A.; Schoch, W.; Limmer, W.; Sauer, R.; Waag, A. [Abteilung Halbleiterphysik, Universitaet Ulm, D-89069 Ulm (Germany); Institut fuer Halbleitertechnik, Technische Universitaet (TU) Braunschweig, Hans-Sommer-Strasse 66, D38103 Braunschweig (Germany)

    2005-07-15

    We studied the effect of the V/III flux ratio and substrate temperature on magnetotransport properties and lattice parameters of Ga{sub 0.96}Mn{sub 0.04}As grown by molecular-beam epitaxy. For all the substrate temperatures, the conductivities and Curie temperatures of the layers were found to increase as the V/III flux ratio approaches 1. A Curie temperature as high as 95 K was achieved for the Ga{sub 0.96}Mn{sub 0.04}As samples grown at 240 deg. C and a V/III ratio of about 1.5. The lattice parameter of Ga{sub 0.96}Mn{sub 0.04}As increased with decreasing V/III ratio and/or increasing growth temperature. Possible reasons for the effect of the V/III ratio on the magnetotransport properties and lattice parameter of GaMnAs are discussed.

  11. Ferromagnetic transition temperature enhancement in (Ga,Mn)As semiconductors by carbon codoping 

    E-Print Network [OSTI]

    Jungwirth, T.; Masek, J.; Sinova, Jairo; MacDonald, AH.

    2003-01-01

    We present a theoretical study of (Ga,Mn)(As,C) diluted magnetic semiconductors with high C acceptor density that combines insights from phenomenological model and microscopic approaches. A tight-binding coherent-potential approximation is used...

  12. Controlling Mn depth profiles in GaMnAs during high-temperature molecular beam epitaxial growth

    E-Print Network [OSTI]

    Thibado, Paul M.

    , or spintronics [1]. The reason for this is that, compared to conventional electronic devices, spin-based devices be suitable for spintronics. For example, the discovery of ferromagnetism in Mn-doped GaAs grown by MBE [4] has led to interest in it as an ideal material for spintronics applications [5,6]. The future success

  13. Magnetic field-induced phase transformation and variant reorientation in Ni2MnGa and NiMnCoIn magnetic shape memory alloys 

    E-Print Network [OSTI]

    Karaca, Haluk Ersin

    2009-05-15

    The purpose of this work is to reveal the governing mechanisms responsible for the magnetic field-induced i) martensite reorientation in Ni2MnGa single crystals, ii) stress-assisted phase transformation in Ni2MnGa single ...

  14. Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

    SciTech Connect (OSTI)

    Yastrubchak, O., E-mail: yastrub@hektor.umcs.lublin.pl [Institute of Physics, Maria Curie-Sklodowska University in Lublin, Pl. M. Curie-Sk?odowskiej 1, 20-031 Lublin (Poland); Institute of Semiconductor Physics, National Academy of Sciences, 41 pr. Nauki, 03028 Kyiv (Ukraine); Sadowski, J. [MAX-IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund (Sweden); Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Gluba, L.; ?uk, J.; Kulik, M. [Institute of Physics, Maria Curie-Sklodowska University in Lublin, Pl. M. Curie-Sk?odowskiej 1, 20-031 Lublin (Poland); Domagala, J. Z.; Andrearczyk, T.; Wosinski, T. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Rawski, M. [Analytical Laboratory, Maria Curie-Sklodowska University in Lublin, Pl. M. Curie-Sk?odowskiej 3, 20-031 Lublin (Poland)

    2014-08-18

    Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.

  15. Disentangling the Mn moments on different sublattices in the half-metallic ferrimagnet Mn3?xCoxGa

    SciTech Connect (OSTI)

    Klaer, P.; Jenkins, C.A.; Alijani, V.; Winterlik, J.; Balke, B.; Felser, C.; Elmers, H.J.

    2011-05-03

    Ferrimagnetic Mn{sub 3-x}Co{sub x}Ga compounds have been investigated by magnetic circular dichroism in x-ray absorption (XMCD). Compounds with x > 0.5 crystallize in the CuHg{sub 2}Ti structure. A tetragonal distortion of the cubic structure occurs for x {le} 0.5. For the cubic phase, magnetometry reveals a linearly increasing magnetization of 2x Bohr magnetons per formula unit obeying the generalized Slater-Pauling rule. XMCD confirms the ferrimagnetic character with Mn atoms occupying two different sublattices with antiparallel spin orientation and different degrees of spin localization and identifies the region 0.6 < x {le} 0.8 as most promising for a high spin polarization at the Fermi level. Individual Mn moments on inequivalent sites are compared to theoretical predictions.

  16. Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors 

    E-Print Network [OSTI]

    Sinova, Jairo; Jungwirth, T.; Liu, X.; Sasaki, Y.; Furdyna, JK; Atkinson, WA; MacDonald, AH.

    2004-01-01

    stream_source_info PhysRevB.69.085209.pdf.txt stream_content_type text/plain stream_size 32392 Content-Encoding ISO-8859-1 stream_name PhysRevB.69.085209.pdf.txt Content-Type text/plain; charset=ISO-8859-1 n . s re... of the theory of the Mn spin- wave dispersion, and reflect the retarded and nonlocal char- acter of the valence-band-hole mediated interactions between Mn moments.11 The Gilbert damping of magnetization pre- cession discussed here is the aspect of this long...

  17. Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As 

    E-Print Network [OSTI]

    Vyborny, Karel; Kucera, Jan; Sinova, Jairo; Rushforth, A. W.; Gallagher, B. L.; Jungwirth, T.

    2009-01-01

    Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs...

  18. Low-temperature magnetization of (Ga,Mn) As semiconductors 

    E-Print Network [OSTI]

    Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

    2006-01-01

    the semiphenomenological virtual crystal model the valence band holes experience a mean-field hMF =JpdNMn?S , and the band Hamiltonian can then be written as H? MF=H? KL?B?+hMFs?z, where H? KL?B? is the B-dependent six- band Kohn-Luttinger Hamiltonian of the GaAs host...

  19. Perpendicularly magnetized {tau}-MnAl (001) thin films epitaxied on GaAs

    SciTech Connect (OSTI)

    Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.

    2013-04-15

    Perpendicularly magnetized {tau}-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm{sup 3}, perpendicular magnetic anisotropy constant of 13.65 Merg/cm{sup 3}, and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets.

  20. Structural, elastic, electronic, magnetic and vibrational properties of CuCoMnGa under pressure

    SciTech Connect (OSTI)

    ?yigör, Ahmet; U?ur, ?ule

    2014-10-06

    First principles calculations for the structural, electronic, elastic and phonon properties of the cubic quaternary heusler alloy CuCoMnGa on pressure have been reported by density functional theory (DFT) within generalized gradient approximation (GGA). The calculated values of the elastic constants were used for estimations of the Debye temperatures, the bulk modulus, the shear modulus, the young modulus E, the poisson's ratio ? and the B/G ratio. The elastic constants satisfy all of the mechanical stability criteria. The electronic structures of the ferromagnetic configuration for CuCoMnGa have a metallic character. The estimated magnetic moment per formula unit is 3.76 ?{sub B}. The phonon dispersion is studied using the supercell approach, and the stable nature at 0.2 GPa pressure is observed.

  1. Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors

    E-Print Network [OSTI]

    Owen, Man Hon Samuel

    2010-11-16

    . . . . . . . . . . . . . . . . . . . . . . . . . . 62 3.3.1 Cryogenic systems . . . . . . . . . . . . . . . . . . . . . . . . 62 IV 3.3.2 Electrical measurements . . . . . . . . . . . . . . . . . . . . . 63 Resistance vs. temperature . . . . . . . . . . . . . . . . . . . . 64 Magnetic field sweeps... reduces the tendency toward spin-glass freezing. In fact, for a Background 18 Figure 2.5: Magnetization M as a function of magnetic field H for Ga0.97Mn0.03As thin films, measured at 55 K by SQUID for sample No. 1 at the top panel and sample No. 2...

  2. Scientific Basis for Bacterial TMDLs in Georgia

    E-Print Network [OSTI]

    Radcliffe, David

    and Natural Resources University of Georgia, Athens, GA Atlanta, Georgia June 2006 Scientific Basis Advisory Committee as part of the Georgia Statewide Water Planning process. www.gadnr.org/gswp/Documents/info

  3. Electric-Field Modulation of Curie Temperature in (Ga, Mn)As Field-Effect Transistor Structures with Varying Channel Thickness and Mn Compositions

    SciTech Connect (OSTI)

    Nishitani, Y.; Endo, M.; Chiba, D.; Matsukura, F.; Ohno, H.

    2010-01-04

    We have investigated the change of T{sub C} of ferromagnetic semiconductor (Ga, Mn)As by changing hole concentration p. The field effect transistor structure was utilized to change p. The relation T{sub C}propor top{sup 0.2} is obtained for three samples, despite the difference of their Mn composition and thickness, indicating that the relation holds over 2 decades of p.

  4. Properties of Ga{sub 1-x}Mn{sub x}As with high x (>0.1)

    SciTech Connect (OSTI)

    Chiba, D.; Yu, K. M.; Walukiewicz, W.; Nishitani, Y.; Matsukura, F.; Ohno, H.

    2008-04-01

    We have investigated the magnetic and the crystalline properties of a set of Ga{sub 1-x}Mn{sub x}As layers with high nominal Mn compositions (x=0.101-0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition x{sub eff} and the fraction of Mn atoms at various lattice sites. Here, x{sub eff} determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements.

  5. What is the valence of Mn in Ga1-xMnxN?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Berlijn, Tom; Jarrell, Mark; Nelson, Ryky; Ku, Wei; Moreno, Juana

    2015-11-04

    Motivated by the potential high Curie temperature of Ga1-xMnxN, we investigate the controversial Mn valence in this diluted magnetic semiconductor. From a first-principles Wannier-function analysis of the high energy Hilbert space, we find unambiguously the Mn valence to be close to 2+(d5), but in a mixed spin configuration with average magnetic moments of 4µB. By integrating out high-energy degrees of freedom differently, we further demonstrate the feasibility of both effective d4 and d5 descriptions. These two descriptions offer simple pictures for local and extended properties of the system, and highlight the dual nature of its doped hole. Specifically, in themore »effective d5 description, we demonstrate novel physical effects absent in previous studies. Thus, our derivation highlights the richness of low-energy sectors in interacting many-body systems and the generic need for multiple effective descriptions.« less

  6. Magnetic domain wall manipulation in (Ga,Mn)As nanostructures for spintronic applications

    SciTech Connect (OSTI)

    Wosinski, Tadeusz; Andrearczyk, Tomasz; Figielski, Tadeusz; Olender, Karolina; Wrobel, Jerzy

    2014-02-21

    Ring-shaped nanostructures have been designed and fabricated by electron-beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As. The nanostructures, in a form of planar rings with a slit, were supplied with four electrical terminals and subjected to magneto-transport studies under planar weak magnetic field. Magnetoresistive effects caused by manipulation of magnetic domain walls and magnetization reversal in the nanostructures have been investigated and possible applications of the nanostructures as four-terminal spintronic devices are discussed.

  7. Elastic Constants of Ni-Mn-Ga Magnetic Shape Memory Alloys

    SciTech Connect (OSTI)

    Stipcich, M. [Universitat de Barcelona; Manosa, L. [Universitat de Barcelona; Planes, A. [Universitat de Barcelona; Morin, M. [INSA de Lyon; Zarestky, Jerel L [ORNL; Lograsso, Tom [Ames Laboratory; Stassis, C. [Ames Laboratory

    2004-01-01

    We have measured the adiabatic second order elastic constants of two Ni-Mn-Ga magnetic shape memory crystals with different martensitic transition temperatures, using ultrasonic methods. The temperature dependence of the elastic constants has been followed across the ferromagnetic transition and down to the martensitic transition temperature. Within experimental errors no noticeable change in any of the elastic constants has been observed at the Curie point. The temperature dependence of the shear elastic constant C' has been found to be very different for the two alloys. Such a different behavior is in agreement with recent theoretical predictions for systems undergoing multi-stage structural transitions.

  8. Generation and control of spin-polarized photocurrents in GaMnAs heterostructures

    SciTech Connect (OSTI)

    Bezerra, Anibal T. Farinas, Paulo F.; Studart, Nelson; Degani, Marcos H.; Maialle, Marcelo Z.

    2014-01-13

    Photocurrents are calculated for a specially designed GaMnAs semiconductor heterostructure. The results reveal regions in the infrared range of the energy spectrum, in which the proposed structure is remarkably spin-selective. For such photon energies, the generated photocurrents are strongly spin-polarized. Application of a relatively small static bias in the growth direction of the structure is predicted to efficiently reverse the spin-polarization for some photon energies. This behavior suggests the possibility of conveniently simple switching mechanisms. The physics underlying the results is studied and understood in terms of the spin-dependent properties emerging from the particular potential profile of the structure.

  9. Structural controlled magnetic anisotropy in Heusler L1{sub 0}-MnGa epitaxial thin films

    SciTech Connect (OSTI)

    Wang Kangkang; Lu Erdong; Smith, Arthur R.; Knepper, Jacob W.; Yang Fengyuan

    2011-04-18

    Ferromagnetic L1{sub 0}-MnGa thin films have been epitaxially grown on GaN, sapphire, and MgO substrates using molecular beam epitaxy. Using diffraction techniques, the epitaxial relationships are determined. It is found that the crystalline orientation of the films differ due to the influence of the substrate. By comparing the magnetic anisotropy to the structural properties, a clear correlation could be established indicating that the in-plane and out-of-plane anisotropy is directly determined by the crystal orientation of the film and could be controlled via selection of the substrates. This result could be helpful in tailoring magnetic anisotropy in thin films for spintronic applications.

  10. Effect of CoFe insertion in Co{sub 2}MnSi/CoFe/n-GaAs junctions on spin injection properties

    SciTech Connect (OSTI)

    Ebina, Yuya; Akiho, Takafumi; Liu, Hong-xi; Yamamoto, Masafumi; Uemura, Tetsuya, E-mail: uemura@ist.hokudai.ac.jp [Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814 (Japan)

    2014-04-28

    The CoFe thickness (t{sub CoFe}) dependence of spin injection efficiency was investigated for Co{sub 2}MnSi/CoFe/n-GaAs junctions. The ?V{sub NL}/I value, which is a measure of spin injection efficiency, strongly depended on t{sub CoFe}, where ?V{sub NL} is the amplitude of a nonlocal spin-valve signal, and I is an injection current. Importantly, the maximum value of ?V{sub NL}/I for a Co{sub 2}MnSi/CoFe/n-GaAs junction was one order of magnitude higher than that for a CoFe/n-GaAs junction, indicating that a Co{sub 2}MnSi electrode works as a highly polarized spin source. No clear spin signal, on the other hand, was observed for a Co{sub 2}MnSi/n-GaAs junction due to diffusion of Mn atoms into the GaAs channel. Secondary ion mass spectrometry analysis indicated that the CoFe insertion effectively suppressed the diffusion of Mn into GaAs, resulting in improved spin injection properties compared with those for a Co{sub 2}MnSi/n-GaAs junction.

  11. Phase-separated high-temperature-annealed (Ga,Mn)As: A negative charge-transfer-energy material

    E-Print Network [OSTI]

    Moreno, M

    2011-01-01

    The approximate location in the Zaanen-Sawatzky-Allen diagram of the phase-separated (Ga,Mn)As material, consisting of MnAs nanoclusters embedded in GaAs, is determined on the basis of configuration-interaction (CI) cluster-model analysis of their Mn 2p core-level photoemission. The composite material is found to belong to the special class of materials with negative charge-transfer energy (delta). As such, its metallic or insulating/semiconducting behavior depends on the strength of the p-d hybridization (affected by strain) relative to the (size-dependent) p-bandwidth. Whereas internal strain in the embedded clusters counteracts gap opening, a metal-to-semiconductor transition is expected to occur for decreasing cluster size, associated to the opening of a small gap of p-p type (covalent gap). The electronic properties of homogeneous and phase-separated (Ga,Mn)As materials are analyzed, with emphasis on the nature of their metal-insulator transitions.

  12. Effective Landé factor in a GaMnAs quantum dot; with the effects of sp-d exchange on a bound polaron

    SciTech Connect (OSTI)

    Lalitha, D., E-mail: a.john.peter@gmail.com; Peter, A. John, E-mail: a.john.peter@gmail.com [Dept. of Physics, Government Arts College, Melur-625106, Tamilnadu (India)

    2014-04-24

    The effective g-factor of conduction (valence) band electron (hole) is obtained in the GaMnAs quantum dot. Magneto bound polaron in a GaMnAs/Ga{sub 0.6}Al{sub 0.4}As quantum dot is investigated with the inclusion of exchange interaction effects due to Mn alloy content and the geometrical confinement. The spin polaronic energy of the heavy hole exciton is studied with the spatial confinement using a mean field theory in the presence of magnetic field strength.

  13. Epitaxial Mn{sub 2.5}Ga thin films with giant perpendicular magnetic anisotropy for spintronic devices

    SciTech Connect (OSTI)

    Wu Feng; Mizukami, Shigemi; Watanabe, Daisuke; Miyazaki, Terunobu; Naganuma, Hiroshi; Oogane, Mikihiko; Ando, Yasuo

    2009-03-23

    We report on epitaxial growth and magnetic properties of Mn{sub 2.5}Ga thin films, which were deposited on Cr/MgO single crystal substrates by magnetron sputtering. X-ray diffraction results revealed the epitaxial relationships as Mn{sub 2.5}Ga(001)[100] parallel Cr(001)[110] parallel MgO(001)[100]. The presence of (002) and (011) superlattice peaks indicates that the films were crystallized into DO{sub 22} ordered structures. The perpendicular magnetic anisotropy (PMA) properties were found to be related to the extent of DO{sub 22} chemical ordering. A giant PMA (K{sub u}{sup eff}=1.2x10{sup 7} erg/cm{sup 3}) and low saturation magnetization (M{sub s}=250 emu/cm{sup 3}) can be obtained for the film with highest chemical ordering parameter (S=0.8)

  14. Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy

    SciTech Connect (OSTI)

    Jenkins, Catherine; Scholl, Andreas; Kainuma, R.; Elmers, Hans-Joachim; Omori, Toshihiro

    2012-01-18

    The magnetic domain structure in single crystals of a Heusler shape memory compound near the composition Fe{sub 2}MnGa was observed during phase transition by photoelectron emission microscopy at Beamline 11.0.1.1 of the Advanced Light Source. The behavior is comparable with recent observations of an adaptive martensite phase in prototype Ni{sub 2}MnGa, although the pinning in the recent work is an epitaxial interface and in this work the e#11;ective pinning plane is a boundary between martensitic variants that transform in a self-accommodating way from the single crystal austenite phase present at high temperatures. Temperature dependent observations of the twinning structure give information as to the coupling behavior between the magnetism and the structural evolution.

  15. Magnetic properties of MnSb inclusions formed in GaSb matrix directly during molecular beam epitaxial growth

    SciTech Connect (OSTI)

    Lawniczak-Jablonska, Krystyna; Wolska, Anna; Klepka, Marcin T.; Kret, Slawomir; Kurowska, Boguslawa; Kowalski, Bogdan J.; Twardowski, Andrzej; Wasik, Dariusz; Kwiatkowski, Adam; Sadowski, Janusz

    2011-04-01

    Despite of intensive search for the proper semiconductor base materials for spintronic devices working at room temperature no appropriate material based on ferromagnetic semiconductors has been found so far. We demonstrate that the phase segregated system with MnSb hexagonal inclusions inside the GaSb matrix, formed directly during the molecular beam epitaxial growth reveals the ferromagnetic properties at room temperature and is a good candidate for exploitation in spintronics. Furthermore, the MnSb inclusions with only one crystalline structure were identified in this GaMn:MnSb granular material. The SQUID magnetometry confirmed that this material exhibits ferromagnetic like behavior starting from helium up to room temperature. Moreover, the magnetic anisotropy was found which was present also at room temperature, and it was proved that by choosing a proper substrate it is possible to control the direction of easy axis of inclusions' magnetization moment between in-plane and out-of-plane; the latter is important in view of potential applications in spintronic devices.

  16. Georgia and Arkansas Residential Energy Code Field Studies |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GA Partners: - Advanced Energy - Raleigh, NC - Arkansas Economic Development Commission, Energy Office - Little Rock, AR - Georgia Department of Community Affairs - Atlanta, GA -...

  17. Neutron diffraction study of the magnetic-field-induced transition in Mn{sub 3}GaC

    SciTech Connect (OSTI)

    Çakir, Ö.; Acet, M.; Farle, M.; Senyshyn, A.

    2014-01-28

    The antiperovskite Mn{sub 3}GaC undergoes an isostructural cubic–cubic first order transition from a low-temperature, large-cell-volume antiferromagnetic state to a high-temperature, small-cell-volume ferromagnetic state at around 160?K. The transition can also be induced by applying a magnetic field. We study here the isothermal magnetic-field-evolution of the transition as ferromagnetism is stabilized at the expense of antiferromagnetism. We make use of the presence of the two distinct cell volumes of the two magnetic states as a probe to observe by neutron diffraction the evolution of the transition, as the external magnetic field carries the system from the antiferromagnetic to the ferromagnetic state. We show that the large-volume antiferromagnetic and the small-volume ferromagnetic states coexist in the temperature range of the transition. The ferromagnetic state is progressively stabilized as the field increases.

  18. EECBG Success Story: In Savannah, Georgia, Even the Data is Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia, Even the Data is Green May 5, 2011 - 4:49pm Addthis The new energy efficient IT Data Center in Savannah, Georgia. | Courtesy of the City of Savannah, GA. The new energy...

  19. In-situ neutron diffraction study of martensitic variant redistribution in polycrystalline Ni-Mn-Ga alloy under cyclic thermo-mechanical treatment

    SciTech Connect (OSTI)

    Li, Zongbin; Zou, Naifu; Zhao, Xiang; Zuo, Liang, E-mail: lzuo@mail.neu.edu.cn, E-mail: yudong.zhang@univ-lorraine.fr [Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Zhang, Yudong, E-mail: lzuo@mail.neu.edu.cn, E-mail: yudong.zhang@univ-lorraine.fr; Esling, Claude [Laboratoire d'Étude des Microstructures et de Mécanique des Matériaux (LEM3), CNRS UMR 7239, Université de Lorraine, 57045 Metz (France); Laboratory of Excellence on Design of Alloy Metals for low-mAss Structures (DAMAS), Université de Lorraine, 57045 Metz (France); Gan, Weimin [German Engineering Materials Science Centre (GEMS), Helmholtz-Zentrum Geesthacht (HZG) Outstation at FRM II, D-85748, Garching (Germany)

    2014-07-14

    The influences of uniaxial compressive stress on martensitic transformation were studied on a polycrystalline Ni-Mn-Ga bulk alloy prepared by directional solidification. Based upon the integrated in-situ neutron diffraction measurements, direct experimental evidence was obtained on the variant redistribution of seven-layered modulated (7M) martensite, triggered by external uniaxial compression during martensitic transformation. Large anisotropic lattice strain, induced by the cyclic thermo-mechanical treatment, has led to the microstructure modification by forming martensitic variants with a strong ?0 1 0?{sub 7M} preferential orientation along the loading axis. As a result, the saturation of magnetization became easier to be reached.

  20. Effects of Ga substitution on the structural and magnetic properties of half metallic Fe{sub 2}MnSi Heusler compound

    SciTech Connect (OSTI)

    Pedro, S. S. Caraballo Vivas, R. J.; Andrade, V. M.; Cruz, C.; Paixão, L. S.; Contreras, C.; Costa-Soares, T.; Rocco, D. L.; Reis, M. S.; Caldeira, L.; Coelho, A. A.; Carvalho, A. Magnus G.

    2015-01-07

    The so-called half-metallic magnets have been proposed as good candidates for spintronic applications due to the feature of exhibiting a hundred percent spin polarization at the Fermi level. Such materials follow the Slater-Pauling rule, which relates the magnetic moment with the valence electrons in the system. In this paper, we study the bulk polycrystalline half-metallic Fe{sub 2}MnSi Heusler compound replacing Si by Ga to determine how the Ga addition changes the magnetic, the structural, and the half-metal properties of this compound. The material does not follow the Slater-Pauling rule, probably due to a minor structural disorder degree in the system, but a linear dependence on the magnetic transition temperature with the valence electron number points to the half-metallic behavior of this compound.

  1. Magnetic and structural properties of Mn-implanted GaN N. Theodoropoulou and A. F. Hebard

    E-Print Network [OSTI]

    Hebard, Arthur F.

    process- ing, and storage and in photonics. It has been demonstrated in a number of semiconductors, and S. J. Peartona) Department of Materials Science and Engineering, University of Florida, Gainesville hole concentration of 2 1017 cm 3 . Mn ions were implanted at an energy of 250 keV and doses from 1015

  2. A non-volatile-memory device on the basis of engineered anisotropies in (Ga,Mn)As

    E-Print Network [OSTI]

    Loss, Daniel

    ­orbit-mediated coupling of magnetic and semiconductor properties in this material gives rise to many novel transport,Mn)As is a prototypical material for investigating potential device applications of ferromagnetic semiconductors. The spin.1038/nphys652 The rich anisotropic transport behaviour shown by ferromagnetic semiconductors arises from

  3. Systematic analysis of the crystal structure, chemical ordering, and microstructure of Ni-Mn-Ga ferromagnetic shape memory alloys

    E-Print Network [OSTI]

    Richard, Marc Louis

    2005-01-01

    Ni-n-Ga based ferromagnetic shape-memory alloys (FSMAs) have shown great promise as an active material that yields a large output strain over a range of actuation frequencies. The maximum strain has been reported to be 6% ...

  4. Timothy J. Bartness Departments of Biology and Center for Behavioral Neuroscience, Georgia State University, Atlanta, GA 30303. Gregory E. Demas Department of Biology and Program in Neural

    E-Print Network [OSTI]

    Demas, Greg

    University, Atlanta, GA 30303. Gregory E. Demas Department of Biology and Program in Neural Science, Indiana University, Bloomington, IN 47405. Neurobiology of Food and Fluid Intake, 2nd Ed., Volume 14 of Handbook, and from humans, many or most of the fundamental problems in ingestive behavior 423 #12;have not been

  5. Georgia Tech Dangerous Gas

    E-Print Network [OSTI]

    Li, Mo

    1 Georgia Tech Dangerous Gas Safety Program March 2011 #12;Georgia Tech Dangerous Gas Safety.......................................................................................................... 5 6. DANGEROUS GAS USAGE REQUIREMENTS................................................. 7 6.1. RESTRICTED PURCHASE/ACQUISITION RULES: ................................................ 7 7. FLAMMABLE GAS

  6. Influence of boron on the microstructural and mechanical properties of Ni{sub 53.5}Mn{sub 26.0}Ga{sub 20.5} shape memory alloy

    SciTech Connect (OSTI)

    Ramudu, M., E-mail: macrams2@gmail.com; Kumar, A. Satish, E-mail: macrams2@gmail.com; Seshubai, V., E-mail: macrams2@gmail.com [School of Physics, University of Hyderabad, Central University P. O., Hyderabad - 500 046 (India); Rajasekharan, T. [Department of Physics, Rajiv Gandhi University of Knowledge Technologies, IIIT-Campus, Gachibowli, Hyderabad - 500 032 (India)

    2014-04-24

    Boron addition to Ni{sub 53.5}Mn{sub 26.0}Ga{sub 20.5} alloy is found to modify the microstructure and mechanical properties substantially. Studies on (Ni{sub 53.5}Mn{sub 26.0}Ga{sub 20.5})B{sub x} alloys reveal that boron addition causes grain refinement which led to an increase in compressive strength in x=0.5 alloy which also retained multimode twinning. Substantial second phase segregation rich in Ni was seen at grain boundaries, the extent of which increased with boron content. This led to a compositional shift in the matrix phase which resulted in a reduction in the martensitic transformation temperature and which in turn caused an easy deformation at low stresses and suppression of multimode twinning in x=1.0 alloy.

  7. Library Abridged Georgia Legislative History

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Library Abridged Georgia Legislative History Georgia legislative history research entails looking databases. Print Sources for Georgia Legislative History at the GSU Law Library Journal of the Georgia House of Representatives o Official Account of the legislative history of the Georgia House

  8. Georgia Air Quality Control Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Air Quality Control Act (AQCA) is a set of environmental regulations, permitting requirements, and air quality standards that control the amount of pollutants emitted and who emits them...

  9. 1 University of Georgia University of Georgia

    E-Print Network [OSTI]

    Arnold, Jonathan

    th year 0 0 0 0 2nd year 0 6 6 2.6 3rd year 0 0 0 0 1st year 1 6 7 3.7 J.D. Attrition (prior academic1 University of Georgia University of Georgia Can first year start other than fall? No Application Semester The Basics Part-Time $ 0 $ 0 Tuition Guarantee Program No Tuition and Fees (academic year*) Full

  10. Georgia Tech Research Institute The Georgia Tech Research Institute (GTRI) is Georgia Tech's applied

    E-Print Network [OSTI]

    Li, Mo

    Georgia Tech Research Institute The Georgia Tech Research Institute (GTRI) is Georgia Tech general funds will further erode its ability to sustain its high level of external funding and its overall

  11. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  12. Ferromagnetism in Mn-and Cr-Implanted AlGaP M.E. Overberg a,*, G.T. Thaler a

    E-Print Network [OSTI]

    Hebard, Arthur F.

    ­15]. This raises the possi- bility of spintronic devices such as transistors which exploit the spin of the electron to integrate GaP-based spintronic devices with existing Si microcircuitry. Recent reports have shown room for room temperature spintronic devices is AlGaP doped with transition ele- ments. The bandgap is larger

  13. Role of Ce<mn>4mn>+ in the scintillation mechanism of codoped Gd<mn>3mn>Ga>3mn>Al<mn>2mn>O<mn>12mn>:Ce

    SciTech Connect (OSTI)

    Wu, Yuntao; Meng, Fang; Li, Qi; Koschan, Merry; Melcher, Charles L.

    2014-10-17

    To control the time-response performance of widely used cerium-activated scintillators in cutting-edge medical-imaging devices, such as time-of-flight positron-emission tomography, a comprehensive understanding of the role of Ce valence states, especially stable Ce4+, in the scintillation mechanism is essential. However, despite some progress made recently, an understanding of the physical processes involving Ce4+ is still lacking. The aim of this work is to clarify the role of Ce4+ in scintillators by studying Ca2+ codoped Gd3Ga3Al2O12?Ce?(GGAG?Ce). By using a combination of optical absorption spectra and x-ray absorption near-edge spectroscopies, the correlation between Ca2+codoping content and the Ce4+ fraction is seen. The energy-level diagrams of Ce3+ and Ce4+ in the Gd3Ga3Al2O12 host are established by using theoretical and experimental methods, which indicate a higher position of the 5d1 state of Ce4+ in the forbidden gap in comparison to that of Ce3+. Underlying reasons for the decay-time acceleration resulting from Ca2+ codoping are revealed, and the physical processes of the Ce4+-emission model are proposed and further demonstrated by temperature-dependent radioluminescence spectra under x-ray excitation.

  14. Effects of hydrogen incorporation in GaMnN K. H. Baik, R. M. Frazier, G. T. Thaler, C. R. Abernathy, and S. J. Peartona)

    E-Print Network [OSTI]

    Hebard, Arthur F.

    , Pennsylvania 18015 J. M. Zavada U.S. Army Research Office, Research Triangle Park, North Carolina 27709 impurity are polarized and the energy of the system is lowered when the polarization of the localized holes reactor operating at 300 mTorr pressure and 100 W forward power. Depth profiling of 2 H, 1 H and Mn

  15. Cubic GaN formation in MnGaN multilayer films grown on 6H-SiC,,0001... Y. Cui, V. K. Lazorov, M. M. Goetz, H. Liu, D. P. Robertson, M. Gajdardziska-Josifovska,

    E-Print Network [OSTI]

    Li, Lian

    improved film quality possibly due to the surfactant effect of Mn. Based on the one-dimensional Ising model attention due to their applications in blue lasers, light- emitting diodes, and high-temperature electronics-III concentration can be controlled precisely. How- ever, limits exist as to how much one can vary the alloy

  16. Georgia State University Library Handbook

    E-Print Network [OSTI]

    Frantz, Kyle J.

    of Public Health 2015-2016 www.library.gsu.edu #12;Georgia State University Library Research Handbook 2 #12Georgia State University Library Handbook for School of Nursing and Health Professions & School. Learning library skills will benefit you not just in a class while at Georgia State University

  17. High strain in polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys under overlapped static and oscillating magnetic fields

    SciTech Connect (OSTI)

    Montanher, D. Z.; Pereira, J. R. D.; Cótica, L. F.; Santos, I. A.; Gotardo, R. A. M.; Viana, D. S. F.; Garcia, D.; Eiras, J. A.

    2014-09-21

    Martensitic polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys, with a stacking period of 14 atomic planes at room temperature, were innovatively processed by combining high-energy ball milling and powder metallurgy. Bulk samples were mechanically coupled to a piezoelectric material in a parallel configuration, and the mechanical deformation of the studied system due to the twin's variant motion was investigated under overlapped static and oscillating magnetic fields. A reversible and high mechanical deformation is observed when the frequency of the oscillating magnetic field is tuned with the natural vibration frequency of this system. In this condition, a linear deformation as a function of the static magnetic field amplitude occurs in the ±4 kOe range, and a mechanical deformation of 2% at 10 kOe is observed.

  18. Budgeting at Georgia Tech

    E-Print Network [OSTI]

    ­ general revenue from any of the sources below: o State o Tuition o Indirect cost recoveries o Student fees of Georgia Tech's Budget: - Capital Budget - Operating Budget #12;Capital Project Funding Methods Renovations Assembly approval) · Gifts through GT Foundation · Recoveries from sponsored projects · Capital Leases ­ GT

  19. Georgia Comprehensive Solid Waste Management Act of 1990 (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Comprehensive Solid Waste Management Act (SWMA) of 1990 was implemented in order to improve solid waste management procedures, permitting processes and management throughout the state. ...

  20. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    of Natural Resources, water and power utilities, environmental organizations and citizen groups, and lake in Water Resource Planning, Aris Georgakakos PI, Georgia Institute of Technology, sponsored by Georgia Assistance for Water Resources Planning in the State of Georgia, Aris Georgakakos PI, Georgia Institute

  1. Molecular Dynamics Simulation of GaAs Molecular Beam Epitaxy D. A. Murdick,1

    E-Print Network [OSTI]

    Wadley, Haydn

    of Virginia, Charlottesville, Virginia 22904, USA 2 Department of Materials, University of Oxford, Oxford OX1 3PH, UK ABSTRACT The vapor deposition of epitaxial GaAs and (Ga,Mn)As thin films during far-temperature growth of Ga0.94Mn0.06As and the Mn clustering trends in as-grown films. INTRODUCTION GaAs is widely used

  2. 2014 Race to Zero Student Design Competition: Georgia Institute...

    Energy Savers [EERE]

    Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia...

  3. Georgia Biofuel Directory A directory of Georgia industries that use biofuels.

    E-Print Network [OSTI]

    Georgia Biofuel Directory · A directory of Georgia industries that use biofuels. · Completed in May _________________________________________________________________ 3 Biofuels_____________________________________________________________________ 4 Biofuel Use in Georgia that Burn Self-Generated Biofuels as of May 2003__ 4 Chart 1.0 Biofuel Use from Contacted

  4. Georgia Shore Assistance Act

    SciTech Connect (OSTI)

    Pendergrast, C.

    1984-01-01

    The Georgia General Assembly passed the Shore Assistance Act in 1979 in order to fill a regulatory gap in the state's management of its coastal resources. A review of its legislative history, purposes, applications, and effects in terms of the sand sharing system of sand dunes, beaches, sandbars, and shoals concludes that the Act is poorly drafted. In its application on the oceanfront, it betrays its intent and protects the oceanfront owner. It has failed to satisfy the requirements of the public trust in the tidal foreshore. Amendments to clarify its understanding of the functions and values of the sand-sharing system should also conform with the state's duties under the public trust. 139 references.

  5. Georgia Power- Solar Buyback Program

    Broader source: Energy.gov [DOE]

    Georgia Power, the state's largest utility, has established a green power program, that allows the company to purchase limited solar generation at a premium price based on other customers volunta...

  6. Georgia Southern University Academic Affairs

    E-Print Network [OSTI]

    Hutcheon, James M.

    for Academic Affairs College of Business Administration Information Systems Finance and Economics Logistics and Supply Chain Management College of Education Leadership, Technology, and Human Development Teaching Georgia Center History Institute for Public and Nonprofit Studies Foreign Languages Literature

  7. Georgia Power- Advanced Solar Initiative

    Broader source: Energy.gov [DOE]

    Note: According to Georgia Power's website, the Advanced Solar Initiative's final program guidelines are due to be published on June 25th and the bidding period for is expected to open on July 10,...

  8. University of Georgia 2020 Strategic Plan

    E-Print Network [OSTI]

    Arnold, Jonathan

    University of Georgia 2020 Strategic Plan Building on Excellence October 30, 2012 #12;Building.......................................................................................1 Hallmarks of the 2020 Strategic Plan Sustainability.....27 Appendix A. University of Georgia Strategic Planning Committee 2009

  9. Georgia Nonprofit Helps Homeowners Save Energy

    Broader source: Energy.gov [DOE]

    Residents in Georgia are living in more comfortable and energy-efficient homes because of this Savannah based weatherization program.

  10. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Arnold, Jonathan

    the University of Georgia Research Foundation, Inc.'s (the "Foundation") compliance with the types of complianceUNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. COMPLIANCE REPORTS For the Year Ended June 30, 2014 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. TABLE OF CONTENTS Financial

  11. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Arnold, Jonathan

    the University of Georgia Research Foundation, Inc.'s (the "Foundation") compliance with the types of compliance UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. COMPLIANCE REPORTS For the Year Ended June 30, 2013 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. TABLE OF CONTENTS Financial Statements

  12. Georgia Southern University Information Technology

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Information Technology Organization Chart 2014-2015 FINAL: August 29, 2014 R:\\Common\\OrgCharts\\Rev 2015 Information Technology \\CIO Produced: Strategic Research & Analysis of the groups of units reporting there. President Vice President for Information Technology and Chief

  13. April 8, 2010 Savannah, Georgia

    E-Print Network [OSTI]

    * Current NCC/TTCC Participating States: 20 Region 1 (2) New York Pennsylvania Region 2 (4) Alabama Georgia-large ­ Tom VanDam, Applied Pavement Tech. (term expires 2010) FHWA ex-officio ­ Gina Ahlstrom, FHWA - DC #12;· State Report Coordinator ­ CP Tech Center · Meeting Notes Recorders and Coordinator ­ CP Tech Center

  14. Georgia State University Library Handbook

    E-Print Network [OSTI]

    Frantz, Kyle J.

    of Public Health 2014-2015 www.library.gsu.edu #12;#12;INTRODUCTION The ability to identify, locate Informatics, Nutrition, Physical Therapy, Public Health & Respiratory Therapy Library South, 5th floor, SuiteGeorgia State University Library Handbook for School of Nursing and Health Professions & School

  15. GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY

    E-Print Network [OSTI]

    Li, Mo

    GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY Ratified by the Institute Council on Environmental Health and Safety August 2008 POLICY Georgia Institute of Technology (Georgia environmental health and safety laws and regulations; and Demonstrating leadership in pollution prevention

  16. Updated 11/1/2012 GEORGIA INSTITUTE OF TECHNOLOGY

    E-Print Network [OSTI]

    Li, Mo

    Updated 11/1/2012 GEORGIA INSTITUTE OF TECHNOLOGY OFFICE OF FINANCIAL SERVICES ADMINSTRATION Cash/Investment Management Debt Management Georgia Tech Facilities, Inc. Georgia Advanced Technology Ventures, Inc. Project Accounting Cost Accounting Rate Studies Negotiations Salary, Planning

  17. Rome folio, Georgia-Alabama 

    E-Print Network [OSTI]

    Hayes, C. W. (Charles Willard), 1859-1916.

    1902-01-01

    Consultant Director, corporate Energy Department Energy ~1anager Manager of Energy Conservation Director of Energy Conservation Manager, corporate Energy Conservation Corporate Energy Coordinator RESULTS During the early part of the study..., Georgia, achieved a payback of less than five months on a system to measure and control allotted natural gas usage (10). With close metering BFG uses less expensive natural gas right up to the allotted supply before switching over to propane...

  18. ,"Georgia Natural Gas LNG Storage Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  19. ,"Georgia Natural Gas LNG Storage Additions (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Additions (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  20. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to Visit Georgia Nuclear Reactor Site and Tennessee Laboratory to Highlight Administration Support for Nuclear Energy Energy Secretary to Visit Georgia Nuclear Reactor Site and...

  1. Sec. Moniz to Georgia, Energy Department Scheduled to Close on...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan...

  2. Renewable and Non-Renewable Resources Tariff RNR-7 (Georgia)

    Broader source: Energy.gov [DOE]

    The Renewable and Non-Renewable Resource tariff is authorized by the Georgia Public Service Commission (PSC), which requires that the investor owned utility, Georgia Power Company, purchase...

  3. Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange

    E-Print Network [OSTI]

    Wang, Zhong L.

    of Technology, Atlanta, GA 30332-0245, USA b School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA Received 17 March 2002; accepted 16 April 2002 by D. Van Dyck Abstract P exchange; D. Stranski­Krastanov (S­K) growth Self-assemble by exploiting the Stranski­Krastanov (S

  4. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    Water Resources Institute GWRI mission is to help improve water resources management in Georgia, the US, Georgia Tech, sponsored by NOAA, the California Energy Commission, and CalFed under grants #2006J04, #2006 and groups with objective facts and information useful in developing a sound and sustainable water resources

  5. Wood Fired Steam Plants in Georgia 

    E-Print Network [OSTI]

    Bulpitt, W. S.

    1983-01-01

    . Shortly after that time, Georgia Tech and the Georgia Forestry Commission embarked on a number of projects directed toward providing the use of wood as an industrial energy source. This paper will present an overview of these programs with an emphasis...

  6. New Georgia Tech Retirees You are invited to join the

    E-Print Network [OSTI]

    Li, Mo

    INVITATION for New Georgia Tech Retirees You are invited to join the SILVER JACKETS Georgia Tech Retiree Association Stay connected with your Georgia Tech colleagues and friends through meetings, email and special events. Help promote a strong voice for Georgia Tech retirees on issues of interest

  7. Central Georgia EMC- Photovoltaic Rebate Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

  8. Georgia Power- Energy Efficiency Home Improvement Rebates

    Broader source: Energy.gov [DOE]

    Georgia Power offers up to $2,575 in rebates to customers who choose to improve home performance with whole building BPI certified efficiency measures or up to $700 for individual improvements from...

  9. Georgia: Data Center and Historic Municipal Building Go Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia: Data Center and Historic Municipal Building Go Green Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can...

  10. Ellijay folio, Georgia-North Carolina-Tennessee 

    E-Print Network [OSTI]

    La Forge, Laurence, 1871-1954.; Phalen, William Clifton, 1877-1949.

    1913-01-01

    During the 1970's, Georgia industry experienced problems obtaining fuel for operations on several occasions. In particular, the very cold winter of 1976-77 resulted in natural gas curtailments which virtually shut down many of Georgia's industries...

  11. Georgia Southern University Organization Chart 2014-2015

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Organization Chart 2014-2015 FINAL: August 29, 2014 R:\\Common\\Org Charts\\Rev2014n\\Georgia Southern Produced: Strategic Research & Analysis/MP NOTE: College of Graduate

  12. Georgia Institute of Technology For more information contact

    E-Print Network [OSTI]

    Nair, Sankar

    as a necessary complement to conventional oil and gas. Biofuel research at Georgia Tech intensified in 2004 Corporation chose Georgia Tech as its first strategic research alliance partner, according to Rick Zalesky Biofuels, the Georgia Research Alliance and one of the U.S. Department of Energy's new BioEnergy Research

  13. URBAN/INDUSTRIAL LAND PRIVATIZATION The Republic of Georgia

    E-Print Network [OSTI]

    Onsrud, Harlan J.

    's economic transformation to a market economy. This is also true of Georgia. By securing title to their land reviewed overall market reform prospects in the Republic of Georgia. The findings indicate that Georgia's market reform lags behind several other New Independent State (NIS) countries. This is largely due

  14. School of Chemistry and Biochemistry Georgia Institute of Technology

    E-Print Network [OSTI]

    Sherrill, David

    Analytical Physical Advanced Labs Analytical Biochemistry Inorganic Organic 4. Indicate the two chemistrySchool of Chemistry and Biochemistry Georgia Institute of Technology Atlanta, Georgia 30332-0400 A Unit of the University System of Georgia TO: B.S. in Chemistry/B.S. in Biochemistry Degree Candidates

  15. Georgia Southern University Electronic Thesis and

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Electronic Thesis and Dissertation (ETD) Student Guide to Preparation and dissertations should adhere to include the following. · The thesis or dissertation must be the original work of the student. · Students must conform to the most recent Thesis and Dissertation Guidelines published

  16. GEORGIA INSTITUTE OF TECHNOLOGY BIOSAFETY MANUAL

    E-Print Network [OSTI]

    Sherrill, David

    in the research facilities, and classrooms located at Georgia Institute of Technology and areas located off safety inspections of laboratories and support areas, provides fire safety services, processes and manages hazardous materials for proper disposal, provides emergency response for hazardous materials

  17. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    to address the need for interdisciplinary research, education, technology transfer, and information the Georgia Environmental Protection Division, water and power utilities, environmental organizations, lake Corps of Engineers, U.S. Geological Survey, U.S. Environmental Protection Agency, and U.S. Fish

  18. The University of Georgia Salary Administration & Guidelines

    E-Print Network [OSTI]

    Arnold, Jonathan

    The University of Georgia Salary Administration & Guidelines July 8, 2012 TABLE OF CONTENTS I, or to the salary ranges contained herein, must be submitted in writing to the Office of Human Resources and salary studies to insure that the University's pay structure is competitive and uniform. III. USE

  19. Georgia Tech Department of Housing Bicycle Policies

    E-Print Network [OSTI]

    Li, Mo

    Georgia Tech Department of Housing Bicycle Policies Bicycle Storage There are several options for storage of bicycles in and around Housing buildings: Bicycle storage lockers are available, in limited. Some residence halls have bicycle storage rooms within the building. Ask your staff member if your

  20. Rachel Andrews Georgia Institute of Technology

    E-Print Network [OSTI]

    Rachel Andrews Georgia Institute of Technology Oscar Franzese Energy & Transportation Science) are roller dynamometers currently used to measure CMV brake efficiency. During a PBBT test, the CMV driver. Acknowledgements: Gary Capps, Mary Beth Lascurain Energy & Transportation Science Division Zane Pannell Pellissippi

  1. CRAD, NNSA- Maintenance (MN)

    Broader source: Energy.gov [DOE]

    CRAD for Maintenance (MN). Criteria Review and Approach Documents (CRADs) that can be used to conduct a well-organized and thorough assessment of elements of safety and health programs.

  2. Strain-induced modification in the magnetic properties of Mn{sub 5}Ge{sub 3} thin films

    SciTech Connect (OSTI)

    Dung, Dang Duc [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of) [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Odkhuu, Dorj; Cheol Hong, Soon; Cho, Sunglae [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of)] [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Thanh Vinh, Le [Aix Marseille Université, CNRS, CINaM-UMR 7325, 13288 Marseille (France)] [Aix Marseille Université, CNRS, CINaM-UMR 7325, 13288 Marseille (France)

    2013-08-21

    Epitaxial ferromagnetic Mn{sub 5}Ge{sub 3} thin films were stabilized on GaSb(001) and GaAs(001) substrates using molecular beam epitaxy. Compared to bulk Mn{sub 5}Ge{sub 3} materials, an enhancement of the Curie temperature above 350 K and about 320 K was observed for Mn{sub 5}Ge{sub 3}/GaAs(001) and Mn{sub 5}Ge{sub 3}/GaSb(001) heterostructures, respectively. The magnetization was found to decrease from 323 to 245 emu/cm{sup 3} for films grown on GaSb(001) and GaAs(001). Anomalous Hall effect measurements provide evidence of the strain-induced large spin polarization from density-functional study. Furthermore, our calculated results in bulk Mn{sub 5}Ge{sub 3} under strain indicate that the strain is the origin of different physical properties of Mn{sub 5}Ge{sub 3} grown on different substrates.

  3. Woodstock, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia:Illinois:Wizard Power Pty LtdWoodlawnWoodshedConnecticut:

  4. EA-1963: Elba Liquefaction Project, Savannah, Georgia

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERC’s eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

  5. Hapeville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynnMassachusetts: Energy ResourcesMaine:Park,HansonHapeville, Georgia:

  6. Doraville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstrumentsArea (DOEDixmont, Maine:Doraville, Georgia: Energy Resources

  7. Energy Incentive Programs, Georgia | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: AlternativeCommunication3-EDepartment ofArizona Energy Incentive Programs,Georgia Energy Incentive

  8. Sec. Moniz to Georgia, Energy Department Scheduled to Close on...

    Office of Environmental Management (EM)

    Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan...

  9. InfiniBand-Connected LNET Routers Wheaton College Georgia Institute...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scalability of InfiniBand-Connected LNET Routers Wheaton College Georgia Institute of Technology New Mexico Institute of Mining and Technology Susan Coulter David Bonnie...

  10. Central Georgia EMC- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes.  This year,...

  11. ,"Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)",1,"Annual",2012 ,"Release...

  12. ,"Georgia Natural Gas Imports Price All Countries (Dollars per...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet)",1,"Annual",2014...

  13. Isovalent Anion Substitution in Ga-Mn-pnictide Ferromagnetic Semiconductors

    E-Print Network [OSTI]

    Stone, Peter

    2010-01-01

    5 Ferromagnetic Semiconductors as Spintronicthe previous two examples, spintronic devices aim to exploitdevice [1]. Moreover, spintronic devices are proposed to

  14. Measured lifetimes of metastable levels of Mn X, Mn XI, Mn XII, and Mn XIII ions 

    E-Print Network [OSTI]

    Moehs, D. P.; Church, David A.

    1999-01-01

    An ion storage technique, based on the capture of metastable multiply charged ions from an external ion source into a Kingdon ion trap, has been used to measure the lifetimes of eight metastable levels of Mn ions with 3s(2)3p(k) configurations, k...

  15. Georgia Tech New Student Orientation Overview of Student Financial Aid

    E-Print Network [OSTI]

    Li, Mo

    Georgia Tech New Student Orientation Overview of Student Financial Aid and Paying Your GT Invoice to successfully navigating the financial aid process at Georgia Tech # 1 ­ Application process annual # 2 ­ Read (behind Tech Tower, beside Stadium) Office Hours: 8:30 am to 4:00 pm Monday-Friday Email: bursar

  16. Page 1 of 3 Georgia Drivers License and

    E-Print Network [OSTI]

    Hutcheon, James M.

    Page 1 of 3 Georgia Drivers License and U.S. Social Security Card Information for International Students Do I need a Georgia driver's license or Social Security card? What are the benefits? Generally speaking, a U.S. driver's license is the most common form of day-to-day identification in the U.S. because

  17. Georgia State University J. Mack Robinson College of Business

    E-Print Network [OSTI]

    Frantz, Kyle J.

    in premier journals, three research centers, as well as model business outreach programs. AdditionalGeorgia State University J. Mack Robinson College of Business Department of Marketing BCOM INSTRUCTOR The Marketing Department in the Robinson College of Business of Georgia State University invites

  18. Dalton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstruments Inc JumpIowa: Energy Resources Jump to: navigation,Georgia:

  19. Pineview, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975) | OpenBethlehem Biomass Facility JumpPineview, Georgia: Energy

  20. BRMF Georgia Mountain Biofuels | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to:Greece: EnergyMontana)District Office JumpBRMF Georgia

  1. Rome, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS Report UrlNM-bRenewable Energy|Gas andRofin SinarGeorgia: Energy

  2. Adel, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAand DaltonSolar Energy LLC JumpInformationAddingFrance)AddressGeorgia:

  3. Gordon, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New Pages RecentPlantMagma EnergyGoogle lends support to theGeorgia:

  4. Marietta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource HistoryScenarios TowardsInformationMarietta, Georgia: Energy Resources Jump

  5. Acworth, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (UtilityMichigan)dataSuccessful SmartAcomita Lake,Acton,Georgia: Energy

  6. Adairsville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (UtilityMichigan)dataSuccessfulAdairsville, Georgia: Energy Resources Jump

  7. Camilla, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla, Georgia: Energy Resources Jump to: navigation, search

  8. Clayton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla,ThermalCubaParker,GeorgiaValley Geothermal Project Jump

  9. Norcross, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII Jump to:Information 3rd| Open Energy Information Lawyers' GuideGeorgia:

  10. In Savannah, Georgia, Even the Data is Green | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    in Savannah, GA. | Courtesy of the City of Savannah, GA. The new energy efficient IT Data Center in Savannah, GA. | Courtesy of the City of Savannah, GA. John Johansen...

  11. Scientific Basis for Bacterial TMDLs in Georgia

    E-Print Network [OSTI]

    Radcliffe, David

    , GA. Todd Rasmussen Professor, D.B. Warnell School of Forestry and Natural Resources University Water Planning process. www.gadnr.org/gswp/Documents/info_req.html David Radcliffe Professor, Crop

  12. Dynamics of impurity and valence bands in Ga1-xMnxAs within the dynamical mean-field approximation

    E-Print Network [OSTI]

    Jarrell, Mark

    candidates for spintronic applications.1 In particular, GaAs doped with Mn Ga1-xMnxAs is promising as a spin-carrier injector in spintronic devices2 due to its relatively high mag- netic transition temperature3 and its

  13. GEORGIA TECH RESEARCH CORPORATION BASIC RESEARCH MASTER AGREEMENT

    E-Print Network [OSTI]

    Li, Mo

    1 GEORGIA TECH RESEARCH CORPORATION BASIC RESEARCH MASTER AGREEMENT Effective Date: ________________ Basic Research Master Agreement Number: ______________ THIS BASIC RESEARCH MASTER AGREEMENT is made that authorizes performance of specific research under this Master Agreement. Task Orders shall use the sample

  14. GEORGIA TECH RESEARCH CORPORATION APPLIED RESEARCH MASTER AGREEMENT

    E-Print Network [OSTI]

    Li, Mo

    1 GEORGIA TECH RESEARCH CORPORATION APPLIED RESEARCH MASTER AGREEMENT Effective Date: ________________ Applied Research Master Agreement Number: ______________ THIS APPLIED RESEARCH MASTER AGREEMENT this Master Agreement. Task Order shall use the sample format provided in Attachment A and will include

  15. Media Contacts: Molecular Biology Initiative, Georgia Southern University

    E-Print Network [OSTI]

    Hutcheon, James M.

    (biotechnology, chemistry, physics, biology, forensics), including applicable technology and math skills. "This-ready workforce needed to fill these jobs and we applaud them for standing out as leaders in Georgia's educational

  16. EECBG Success Story: Georgia County Turning Industrial and Farm...

    Broader source: Energy.gov (indexed) [DOE]

    Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook EECBG Success Story: Atlanta Suburb Greases the Path to Savings...

  17. Georgia: Data Center and Historic Municipal Building Go Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Municipal Building Go Green Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can consume 100 to 200 times more...

  18. Energy Savings Performance Contract- Robins Air Force Base, Georgia 

    E-Print Network [OSTI]

    Edge, J. S.

    1998-01-01

    saving projects is through private sector financing, also known as Energy Savings Performance Contracting (ESPC). Robins Air Force Base, located in middle Georgia, has recently implemented such a contract. Using an Army Corps of Engineers area...

  19. GeorgiaSouthern.edu/factbook On the Cover

    E-Print Network [OSTI]

    Hutcheon, James M.

    and made-to-order pasta, Mongolian grill selections, a full bakery, an espresso/smoothie bar, and separate sustainability at the forefront of Georgia Southern's mission, Dining Commons was built as a Leadership in Energy

  20. Gordon County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia: Energy ResourcesIllinois:GoodCounty, Georgia:

  1. Formation of manganese {delta}-doped atomic layer in wurtzite GaN

    SciTech Connect (OSTI)

    Shi Meng; Chinchore, Abhijit; Wang Kangkang; Mandru, Andrada-Oana; Liu Yinghao; Smith, Arthur R.

    2012-09-01

    We describe the formation of a {delta}-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001) surface, forming a {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign phase, namely one Mn per each {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the {delta}-doped interface. A model of the resultant {delta}-doped structure is formulated based on the experimental data, and implications for possible spintronic applications are discussed.

  2. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D. A.; Heiman, D.

    2014-12-05

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. Results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

  3. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jamer, M. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics; Sterbinsky, G. [Brookhaven National Laboratory (BNL), Upton, NY (United States). Photon Sciences Directorate; Assaf, B. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics; Arena, D. [Brookhaven National Laboratory (BNL), Upton, NY (United States). Photon Sciences Directorate; Heiman, D. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics

    2014-12-07

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value. (auth)

  4. Population structure of Cylindrocladium parasiticum infecting peanuts (Arachis hypogaea) in Georgia, USA

    E-Print Network [OSTI]

    Population structure of Cylindrocladium parasiticum infecting peanuts (Arachis hypogaea) in Georgia Cylindrocladium parasiticum is an impor- tant pathogen of peanut (Arachis hypogaea) causing the disease associated with peanut in Georgia, USA. Ten polymorphic microsatellite markers were used to determine genetic

  5. Li (Lily) Wang Address: 223 Statistics Building, University of Georgia, Athens, GA 30602-7952

    E-Print Network [OSTI]

    Wang, Lily

    ). A nonparametric analysis on the environmental Kuznets curve. Environmetrics, 22(3), 420­430. [9] Liu, X., Wang, L

  6. Connect, Collaborate, Commercialize There are many different opportunities for engagement and technology transfer at Georgia

    E-Print Network [OSTI]

    Garmestani, Hamid

    and technology transfer at Georgia Tech. Working together we can tailor a relationship unique to your company

  7. 2015 Georgia Institute of Technology NIST Transactive Energy Challenge Preparatory Workshop

    E-Print Network [OSTI]

    control ­ Black Start ­ Etc. 7 #12;© 2015 Georgia Institute of Technology Architecture Summary The grid© 2015 Georgia Institute of Technology NIST Transactive Energy Challenge Preparatory Workshop March, 2015 Santiago Grijalva Georgia Institute of Technology Co-Simulation of Decentralized Grid Control

  8. 9/21/2004 University of Georgia Strategic Plan Update 2003

    E-Print Network [OSTI]

    Arnold, Jonathan

    9/21/2004 University of Georgia Strategic Plan Update 2003 1 "Building Georgia's World University the Vision to Reality Presented by: Office of the Associate Provost for Institutional Effectiveness #12;9/21/2004 as the guidepost #12;9/21/2004 University of Georgia Strategic Plan Update 2003 3 Three Strategic Directions

  9. your careerGeorgia Tech Evening MBA scheller.gatech.edu/mba

    E-Print Network [OSTI]

    Li, Mo

    . Take your career to new heights. "I chose Georgia Tech because of four key advantages: 1) a flexibletransform your careerGeorgia Tech Evening MBA #12;Business, Meet Tech. scheller.gatech.edu/mba Contents 3 Message from the Dean 6 Georgia Tech Advantages 7 MBA Curriculum 9 Learning Beyond the Classroom

  10. State of Georgia CERTIFICATE OF EXEMPTION OF LOCAL HOTEL/MOTEL EXCISE TAX

    E-Print Network [OSTI]

    Teskey, Robert O.

    AND MOTEL OPERATORS: Effective April 2, 1987, Act Number 621 amending Official Code of Georgia Annotated for exemption of the local hotel/motel excise tax under Official Code of Georgia Annotated Chapter 48-13 (as Section 48-13-51 provides that Georgia state or local government officials or employees traveling

  11. Synthesis and Electrochemistry of Li3MnO4: Mn in the +5 Oxidation State

    E-Print Network [OSTI]

    Saint, Juliette.A.; Doeff, Marca M.; Reed, John

    2008-01-01

    Synthesis and Electrochemistry of Li 3 MnO 4 : Mn in the +5A study describing the electrochemistry of Li 2 MnO 3 in ainvestigation into the electrochemistry of this system

  12. Georgia - Search - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Informationmonthly gasoline price toStocks 2009 2010 2011 2012 2013 20147"10"GeorgiaGeorgia

  13. White County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland: EnergyWexfordSouthValleyCity, Oregon:Georgia:

  14. Whitfield County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland:Meadow Lake, NewWhiteside County,County, Georgia:

  15. Wilkes County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland:MeadowWikiSysop's blog HomeWildlifeWilhoit,Georgia:

  16. Greene County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia:Oregon:CorpGreenburgh, New York:Georgia: Energy

  17. Grady County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia: EnergyGorlitz AG JumpGeorgia: Energy Resources Jump

  18. City of Chickamauga, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley, IdahoChefornak, AlaskaChickamauga, Georgia

  19. Baldwin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex AAustriaBiofuels Brasil JumpGeorgia:BalchAlabama:Georgia:

  20. City of West Point, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla,ThermalCubaParker,Georgia (Utility Company)West Point, Georgia

  1. School of Earth and Atmospheric Sciences Georgia Institute of Technology

    E-Print Network [OSTI]

    Wang, Yuhang

    in atmospheric chemistry/air quality and climate and a growing reputation in oceanography, geophysicsSchool of Earth and Atmospheric Sciences Georgia Institute of Technology Strategic Plan March 1 opportunities. Vision The vision of the School of Earth and Atmospheric Sciences is: To lead in innovative

  2. Shipping and Receiving Dangerous Goods at Georgia Tech

    E-Print Network [OSTI]

    Shipping and Receiving Dangerous Goods at Georgia Tech Contacts: Biological Shipments: Shane://industry.gatech.edu/researchers/forms) GENERAL: The transportation of dangerous goods is regulated by a number of national and international of Dangerous Goods (Flash). PROCESS: 1) All shipments must have a Document Id number as well as a People

  3. LCA-based Selection for XML Document Collections Georgia Koloniari

    E-Print Network [OSTI]

    Pitoura, Evaggelia

    LCA-based Selection for XML Document Collections Georgia Koloniari Department of Computer Science in the collection to the query. We consider keyword queries and support Lowest Common Ancestor (LCA) semantics of the LCA of those nodes in the XML docu- ment that contain the query keywords. To avoid evaluating queries

  4. Georgia Institute of Technology School of Materials Science and Engineering

    E-Print Network [OSTI]

    Li, Mo

    Georgia Institute of Technology School of Materials Science and Engineering Faculty Policy and Committee Handbook #12;Introduction The purpose of this handbook is to document the MSE School's policies. The committee will function as the faculty-elected entity for down-selecting committee members (and chairs

  5. THE SCHOOL OF CHEMISTRY AND BIOCHEMISTRY GEORGIA INSTITUTE OF TECHNOLOGY

    E-Print Network [OSTI]

    Sherrill, David

    THE SCHOOL OF CHEMISTRY AND BIOCHEMISTRY GEORGIA INSTITUTE OF TECHNOLOGY GRADUATE STUDENT HANDBOOK: REQUIRED FORMS A.1. Research Advisor Selection form (Chemistry and Biochemistry) A.2 Completion of Data of the program, you will complete courses that provide a bridge between introductory (undergraduate) material

  6. Reservoirs in Georgia: Meeting Water Supply Needs While

    E-Print Network [OSTI]

    Radcliffe, David

    listed in the National Inventory of Dams 2 2. Impoundments in a portion of the Upper Oconee River watershed 2 3. Water level fluctuations before and after construction of the Allatoona Dam 5 4. The series an overview of the number of reservoirs in Georgia and their impacts. Dams and reservoirs differ marked

  7. GEORGIA TECH RESEARCH CORPORATION SPECIALIZED TESTING SERVICES AGREEMENT

    E-Print Network [OSTI]

    GEORGIA TECH RESEARCH CORPORATION SPECIALIZED TESTING SERVICES AGREEMENT Project No Members"). Section 2. Payment; Fixed Price Amount. 2.1 COMPANY agrees to pay GTRC $______ ("Fixed Price%) of the Fixed Price Amount to GTRC upon signing this Agreement. The advance payment will be applied against

  8. Highly Active Yeast MnSOD has a Novel Mechanism Involving Six-coordinate Mn(3+) Species

    E-Print Network [OSTI]

    Sheng, Yuewei

    2012-01-01

    2009) Functional roles of the tetramer organization of malicGrez, M. (2010) Dimer-tetramer transition controls RUNX1/ETOdimer, Å) Mn•••Mn (A/C, tetramer, Å) Mn•••Mn (A/D, tetramer,

  9. Balance the reaction MnO4 (aq) MnO2(s) + SO4

    E-Print Network [OSTI]

    Peterson, Kirk A.

    Balance the reaction MnO4 Ð (aq) + SO3 2Ð (aq) MnO2(s) + SO4 2Ð (aq) in basic solution Oxidation 2Ð SO4 2Ð (b) 2) These are already balanced in Mn and S 3) Balance O in (a) by adding H2OÕs to the right-hand-side MnO4 Ð MnO2 + 2H2O 4) Balance H by adding H + to the left-hand-side MnO4 Ð + 4H + MnO2

  10. Growth optimization and structural analysis for ferromagnetic Mn-doped ZnO layers deposited by radio frequency magnetron sputtering

    SciTech Connect (OSTI)

    Abouzaid, M.; Ruterana, P.; Liu, C.; Morkoc, H. [SIFCOM UMR 6176 CNRS-ENSICAEN, 6 Boulevard du Marechal Juin, 14050 Caen Cedex (France); Department of Electrical Engineering, Virginia Commonwealth University, Richmond Virginia 23284 (United States)

    2006-06-01

    The effect of the deposition temperature on the crystalline quality of (Zn,Mn)O is investigated in thin films prepared by radio frequency magnetron sputtering on c-plane sapphire and GaN substrates. The layers are made of a 0.5 {mu}m Mn-doped layer towards the surface on top of a 150 nm pure ZnO buffer. Depending on the deposition temperature, the layers can exhibit a columnar structure; the adjacent domains are rotated from one another by 90 deg. , putting [1010] and [1120] directions face to face. At high Mn concentration the columnar structure is blurred by the formation of Mn rich precipitates. Only one variety of domains is observed at an optimal deposition temperature of 500 deg. C: they are slightly rotated around the [0001] axis (mosaic growth) and bounded by threading dislocations.

  11. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    SciTech Connect (OSTI)

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D. A.; Heiman, D.

    2014-12-05

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. Results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

  12. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  13. Webster County, Georgia: Energy Resources | Open Energy Information

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  14. Wheeler County, Georgia: Energy Resources | Open Energy Information

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  15. Wilcox County, Georgia: Energy Resources | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland:MeadowWikiSysop's blog Home >Alabama:

  16. Wilkinson County, Georgia: Energy Resources | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia:Illinois:Wizard Power PtyOhio:Doing BusinessWiseUSA |

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing CapacityVectren) JumpandStereo Satellite ImageryWashington: EnergyGeorgia:

  19. Talbot County, Georgia: Energy Resources | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing CapacityVectren)Model forTechnologies95Symerton,EEconomiesTakomaGeorgia:

  20. Floyd County, Georgia: Energy Resources | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable Urban Transport JumpFlowood, Mississippi: Energy Resources JumpGeorgia:

  1. Glynn County, Georgia: Energy Resources | Open Energy Information

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  2. Douglas County, Georgia: Energy Resources | Open Energy Information

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  3. Schley County, Georgia: Energy Resources | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/ColoradoRemsenburg-Speonk,SageScheuco International Jump to:Schley County, Georgia: Energy

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  8. Randolph County, Georgia: Energy Resources | Open Energy Information

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  9. City of East Point, Georgia (Utility Company) | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,ColumbusDurant,

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  12. City of Quitman, Georgia (Utility Company) | Open Energy Information

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  13. Lighting Up Georgia Convenience Stores | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURING OFFICE INDUSTRIALU.S.Leadership on CleanUp Georgia Convenience Stores Lighting Up

  14. Best Practices for Rural Traffic Safety Georgia's Experience in Increasing Rural Safety Belt Use Rates

    E-Print Network [OSTI]

    Minnesota, University of

    Best Practices for Rural Traffic Safety Georgia's Experience in Increasing Rural Safety Belt Use Enforcement Efforts ­ Checkpoints ­ Messages regarding Seat Belts ­ Messages regarding Rural SB Use

  15. A DISPLAY CONCEPT FOR STAYING AHEAD OF THE AIRPLANE Eric N. Johnson, Lockheed Martin Aeronautical Systems, Marietta, Georgia

    E-Print Network [OSTI]

    Johnson, Eric N.

    A DISPLAY CONCEPT FOR STAYING AHEAD OF THE AIRPLANE Eric N. Johnson, Lockheed Martin Aeronautical Systems, Marietta, Georgia David C. Hansen, Lockheed Martin Aeronautical Systems, Marietta, Georgia manner required for many aerospace applications. Considerably more data fusion, data prediction, alerting

  16. Subscriber access provided by Georgia Tech Library The Journal of Physical Chemistry C is published by the American Chemical

    E-Print Network [OSTI]

    Wang, Zhong L.

    and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, and Department of AdVanced Material, then put into a polypropylene centrifuge tube, which was filled with 5 mL sterile phosphate buffer solution

  17. Case Study: Georgia-Pacific Reduces Outside Fuel Costs and Increases Process Efficiency with Insulation Upgrade Program 

    E-Print Network [OSTI]

    Jackson, D.

    1997-01-01

    A Georgia-Pacific plywood plant located in Madison, Georgia recently decided to insulate their steam lines for energy conservation, improved process efficiency and personnel protection. The goal of the project was to eliminate dependency...

  18. Structural And Physical Characterization of Tetranuclear [Mn**II(3)Mn**IV] And [Mn**II(2)Mn**III(2)] Valence-Isomer Manganese Complexes

    SciTech Connect (OSTI)

    Zaleski, C.M.; Weng, T.-C.; Dendrinou-Samara, C.; Alexiou, M.; Kanakaraki, P.; Hsieh, W.-Y.; Kampf, J.; Penner-Hahn, J.E.; Pecoraro, V.L.; Kessissoglou, D.P.

    2009-05-28

    Two tetranuclear Mn complexes with an average Mn oxidation state of +2.5 have been prepared. These valence isomers have been characterized by a combination of X-ray crystallography, X-ray absorption spectroscopy, and magnetic susceptibility. The Mn{sup II}{sub 3}Mn{sup IV} tetramer has the Mn ions arranged in a distorted tetrahedron, with an S = 6 ground spin state, dominated by ferromagnetic exchange among the manganese ions. The Mn{sup II}{sub 2}Mn{sup III}{sub 2} tetramer also has a distorted tetrahedral arrangement of Mn ions but shows magnetic behavior, suggesting that it is a single-molecule magnet. The X-ray absorption near-edge structure (XANES) spectra for the two complexes are similar, suggesting that, while Mn XANES has sufficient sensitivity to distinguish between trinuclear valence isomers (Alexiou et al. Inorg. Chem. 2003, 42, 2185), similar distinctions are difficult for tetranuclear complexes such as that found in the photosynthetic oxygen-evolving complex.

  19. Simulation and management implications of feral horse grazing on Cumberland Island, Georgia

    E-Print Network [OSTI]

    Turner, Monica G.

    Simulation and management implications of feral horse grazing on Cumberland Island, Georgia MONICA GOIGEL TURNER Cumberiand Island National !&shore, Georgia,is inhabited by a population of feral horsea an acceptable population size of feral horses. Five-year shnulations indicated a threshold of 2,700 kg

  20. GEORGIA STATE UNIVERSITY: Robinson College of Business, Department of Risk Management & Insurance

    E-Print Network [OSTI]

    Frantz, Kyle J.

    GEORGIA STATE UNIVERSITY: Robinson College of Business, Department of Risk Management & Insurance effective fall 2015 in the Department of Risk Management and Insurance at the Robinson College of Business The mission of the Department of Risk Management and Insurance at Georgia State University is to better

  1. This article was downloaded by:[Georgia Technology Library] On: 27 July 2007

    E-Print Network [OSTI]

    Wang, Zhong L.

    This article was downloaded by:[Georgia Technology Library] On: 27 July 2007 Access Details 2007 #12;DownloadedBy:[GeorgiaTechnologyLibrary]At:17:0827July2007 Philosophical Magazine, Vol. 87, Nos cross-section and well-defined growth directions, with widths ranging from 30 nm to 2 mm, width

  2. BACTERIA TMDL IMPLEMENTATION CONTROL STRATEGIES OF THE SOUTHEAST: RECOMMENDATIONS FOR GEORGIA

    E-Print Network [OSTI]

    Radcliffe, David

    BACTERIA TMDL IMPLEMENTATION CONTROL STRATEGIES OF THE SOUTHEAST: RECOMMENDATIONS FOR GEORGIA implementation plans for bacteria in the state of Georgia. Methods include reviewing relevant literature, policy bacteria TMDL implementation plans; 2) showing control strategies in other states that could be implemented

  3. Tilefish off South Carolina and Georgia R. A. LOW, Jr., G. F. ULRICH, and F. BLUM

    E-Print Network [OSTI]

    Tilefish off South Carolina and Georgia R. A. LOW, Jr., G. F. ULRICH, and F. BLUM Introduction. Preliminary indications are that the 1981 commercial catch off South Carolina and Georgia was comparable and were primarily caught in a small area off southeastern Florida. In 1980, the South Carolina Wildlife

  4. Momentum flux estimates for South Georgia Island mountain waves in the stratosphere observed via satellite

    E-Print Network [OSTI]

    Alexander, M. Joan

    Momentum flux estimates for South Georgia Island mountain waves in the stratosphere observed via observations of mountain wave events in the stratosphere above South Georgia Island in the remote southern important drag forces on the circulation. Small island orography is generally neglected in mountain wave

  5. Ph.D in Economics at the Andrew Young School, Georgia State University

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Ph.D in Economics at the Andrew Young School, Georgia State University WHY Georgia State University's Department of Economics? We are part of one of America's best public affairs graduate schools: the Andrew in scholarly journals including Econometrica, American Economic Review, Journal of Political Economy, Quarterly

  6. Advertisement for Clinical Positions GEORGIA STATE UNIVERSITY invites applications for multiple non-tenure-track clinical

    E-Print Network [OSTI]

    Frantz, Kyle J.

    , demonstrated capability for and commitment to publishing research in refereed journals, and an earned Ph on University budget approval. Review of applications will begin immediately and will continue until positions-413-7378 Georgia State University a unit of the University System of Georgia, is an equal opportunity educational

  7. POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition in Licensing

    E-Print Network [OSTI]

    Arnold, Jonathan

    POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition the interests of the company over their responsibilities to UGARF and the University of Georgia. This Policy with this Policy. II. Policy In the course of intellectual property licensing, UGARF, through the work of TCO, may

  8. Mechanism for Job Creation in Georgia: Enterprise Innovation Institute (EI2

    E-Print Network [OSTI]

    , including such leaders as Suniva, which produces solar panels; CardioMEMS, a developer of implantableMechanism for Job Creation in Georgia: Enterprise Innovation Institute (EI2 ) Government's Enterprise Innovation Institute (EI2 ) plays a critical role in the growth of Georgia's econo- my. Through

  9. Eligibility for GT Housing All applicants must have been accepted to Georgia Tech and accepted their offer of admission

    E-Print Network [OSTI]

    Li, Mo

    Eligibility for GT Housing All applicants must have been accepted to Georgia Tech and accepted their offer of admission before they can apply for Georgia Tech Housing. Applicants must be at least 16 years of age on the date of application for Georgia Tech Housing. Applicants over 29 years of age must work

  10. Georgia - Rankings - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Informationmonthly gasoline price toStocks 2009 2010 2011 2012 2013 20147"10"Georgia

  11. Warren County, Georgia: Energy Resources | Open Energy Information

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  13. Turner County, Georgia: Energy Resources | Open Energy Information

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  14. Hall County, Georgia: Energy Resources | Open Energy Information

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  15. Franklin County, Georgia: Energy Resources | Open Energy Information

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  17. Effingham County, Georgia: Energy Resources | Open Energy Information

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  18. Elbert County, Georgia: Energy Resources | Open Energy Information

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  19. Fayette County, Georgia: Energy Resources | Open Energy Information

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  20. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  1. Mitchell County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: Energy ResourcesDec 2005MinnehahaElectric Coop, Inc JumpInformationGeorgia:

  2. Macon County, Georgia: Energy Resources | Open Energy Information

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  3. Lincoln County, Georgia: Energy Resources | Open Energy Information

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  4. Jefferson County, Georgia: Energy Resources | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy ResourcesOrder at 8,OpenKentucky:Jeanerette BiomassJefferson County, Georgia:

  5. Pickens County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975) | Open EnergyPhoenicia, New York:PianaccePiattGeorgia: Energy

  6. Pike County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975) | Open EnergyPhoenicia,Creek, Ohio: EnergyGeorgia: Energy

  7. Quitman County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGeneration JumpPublic UtilityQuintas Energy Jump to: navigation,Georgia:

  8. Newton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPI Ventures LtdNeville,InformationNewcastle,NewNewstead, NewGeorgia: Energy

  9. City of Acworth, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd Jump to:ChangingCNEInformationInformationGeorgia

  10. City of Adel, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (Utility Company) Jump to: navigation, search Name:

  11. City of Barnesville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (Utility Company)Arlington,City ofBardstown,City

  12. City of Blakely, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (UtilityBenham, KentuckyBigelow Place: IowaJump to:

  13. City of Buford, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (UtilityBenham,Bowie,TennesseeMinnesota

  14. City of Cairo, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley, Idaho (Utility Company) Jump

  15. City of Doerun, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,Columbus Place:Cuero,Dike, Iowa

  16. City of Elberton, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,ColumbusDurant,Rapids,Elba, Alabama

  17. City of Ellaville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,ColumbusDurant,Rapids,Elba,Point,Ellaville,

  18. City of Grantville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtdEllsworth, IowaGraettinger, Iowa (UtilityGrantville, Georgia

  19. City of Moultrie, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar EnergyLawler, Iowa (Utility Company)Menasha,MonroeMoultrie, Georgia (Utility

  20. City of Thomasville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar EnergyLawler, IowaScottsboro,Kansas (UtilityCity of Thomasville, Georgia

  1. Appling County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex A S Jump to:AngolaEnergy ManagementGeorgia: Energy Resources

  2. Baker County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex AAustriaBiofuels Brasil JumpGeorgia: Energy Resources Jump to:

  3. Banks County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex AAustriaBiofuelsOpen EnergyBanks County, Georgia: Energy

  4. Calhoun County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank, Maine:Kansas: EnergyCalendarCalhoun County, Alabama: EnergyGeorgia: Energy

  5. Bibb County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental JumpInformation BeaufortBentMichigan:Greece) JumpGeorgia: Energy Resources Jump

  6. Burke County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank, Maine: EnergyEnergyOhio: EnergyNorthInformationBurke County, Georgia:

  7. Coffee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company) JumpIowa: EnergyEnergy InformationGeorgia: Energy

  8. Cook County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)| Open(Evans, EtInformation ControlGeorgia: Energy

  9. Dade County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstruments Inc Jump to:67-2006-12Dabbrook Services Jump to:|Georgia:

  10. Chatham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIR JumpMaine: Energy Resources JumpNebraska: EnergyGeorgia: Energy

  11. Cherokee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIR JumpMaine: EnergyEnergyEnergyChengdu ChinaGeorgia: Energy

  12. City of Cartersville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurch Point,Blue Hill, NebraskaIllinoisCartersville, Georgia

  13. City of Covington, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurch Point,Blue Hill,MissouriClewiston,CityCity ofGeorgia

  14. City of Mansfield, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurchFontanelle, IowaIowaCity ofGeorgia (Utility Company) Jump

  15. Clayton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company) Jump to:New York:Clay County,NorthGeorgia: Energy Resources

  16. Fulton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePowerEdistoWhiskeyFootprint VenturesColorado:Georgia: Energy Resources Jump

  17. City of Washington, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla,ThermalCubaParker,Georgia (Utility Company) Jump to:

  18. Spin-Orbit Torque Driven Magnetization Dynamics in (Ga,Mn)As and (Ga,Mn)(As,P) Dilute Magnetic Semiconductors 

    E-Print Network [OSTI]

    Vehstedt, Erin Kathleen

    2014-07-18

    . In order to overcome these limits, new methods must be developed to reliably transmit and store data more efficiently. The understanding and manipulation of magnetic domain walls (DWs) may play a pivotal role in the development of new non-volatile and down...

  19. Mn/DOT's Project Peer Review

    E-Print Network [OSTI]

    Minnesota, University of

    issue we share with peers) ·Benchmark Mn/DOT's project management practices ·Initial step in a change decision- making ·Able to manage project change #12;Project Management Opportunities and Challenges ·TheMn/DOT's Project Management Peer Review Creating a Project Management Culture 2010 CTS Research

  20. Air Quality and Road Emission Results for Fort Stewart, Georgia

    SciTech Connect (OSTI)

    Kirkham, Randy R.; Driver, Crystal J.; Chamness, Mickie A.; Barfuss, Brad C.

    2004-02-02

    The Directorate of Public Works Environmental & Natural Resources Division (Fort Stewart /Hunter Army Airfield) contracted with the Pacific Northwest National Laboratory (PNNL) to monitor particulate matter (PM) concentrations on Fort Stewart, Georgia. The purpose of this investigation was to establish a PM sampling network using monitoring equipment typically used in U.S. Environmental Protection Agency (EPA) ''saturation sampling'', to determine air quality on the installation. In this initial study, the emphasis was on training-generated PM, not receptor PM loading. The majority of PM samples were 24-hr filter-based samples with sampling frequency ranging from every other day, to once every six days synchronized with the EPA 6th day national sampling schedule. Eight measurement sites were established and used to determine spatial variability in PM concentrations and evaluate whether fluctuations in PM appear to result from training activities and forest management practices on the installation. Data collected to date indicate the average installation PM2.5 concentration is lower than that of nearby urban Savannah, Georgia. At three sites near the installation perimeter, analyses to segregate PM concentrations by direction of air flow across the installation boundary indicate that air (below 80 ft) leaving the installation contains less PM2.5 than that entering the installation. This is reinforced by the observation that air near the ground is cleaner on average than the air at the top of the canopy.

  1. Bicolor Mn-doped CuInS{sub 2}/ZnS core/shell nanocrystals for white light-emitting diode with high color rendering index

    SciTech Connect (OSTI)

    Huang, Bo; Dai, Qian; Zhang, Huichao; Liao, Chen; Cui, Yiping; Zhang, Jiayu, E-mail: jyzhang@seu.edu.cn [Advanced Photonic Center, Southeast University, Nanjing 210096 (China); Zhuo, Ningze; Jiang, Qingsong; Shi, Fenghua; Wang, Haibo [Research Institute of Electric Light Source Materials, Nanjing University of Technology, Nanjing 210015 (China)

    2014-09-07

    We synthesized bicolor Mn-doped CuInS{sub 2} (CIS)/ZnS core/shell nanocrystals (NCs), in which Mn{sup 2+} ions and the CIS core were separated with a ZnS layer, and both Mn{sup 2+} ions and CIS cores could emit simultaneously. Transmission electron microscopy and powder X-ray diffraction measurements indicated the epitaxial growth of ZnS shell on the CuInS{sub 2} core, and electron paramagnetic resonance spectrum indicated that Mn{sup 2+} ions were on the lattice points of ZnS shell. By integrating these bicolor NCs with commercial InGaN-based blue-emitting diodes, tricolor white light-emitting diodes with color rendering index of 83 were obtained.

  2. Abundance analysis of SB2 binary stars with HgMn primaries

    E-Print Network [OSTI]

    T. Ryabchikova

    1998-05-06

    We present a short review of the abundances in the atmospheres of SB2 systems with Mercury-Manganese (HgMn) primaries. Up to now a careful study has been made for both components of 8 out of 17 known SB2 binaries with orbital periods shorter than 100 days and mass ratio ranging from 1.08 to 2.2. For all eight systems we observe a lower Mn abundance in the secondary's atmospheres than in the primary's. Significant difference in the abundances is also found for some peculiar elements such as Ga, Xe, Pt. All secondary stars with effective temperatures less than 10000 K show abundance characteristics typical of the metallic-line stars.

  3. sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage

    SciTech Connect (OSTI)

    Waddell, Michael

    2014-09-30

    This study focuses on evaluating the feasibility and suitability of using the Jurassic/Triassic (J/TR) sediments of the South Georgia Rift basin (SGR) for CO2 storage in southern South Carolina and southern Georgia The SGR basin in South Carolina (SC), prior to this project, was one of the least understood rift basin along the east coast of the U.S. In the SC part of the basin there was only one well (Norris Lightsey #1) the penetrated into J/TR. Because of the scarcity of data, a scaled approach used to evaluate the feasibility of storing CO2 in the SGR basin. In the SGR basin, 240 km (~149 mi) of 2-D seismic and 2.6 km2 3-D (1 mi2) seismic data was collected, process, and interpreted in SC. In southern Georgia 81.3 km (~50.5 mi) consisting of two 2-D seismic lines were acquired, process, and interpreted. Seismic analysis revealed that the SGR basin in SC has had a very complex structural history resulting the J/TR section being highly faulted. The seismic data is southern Georgia suggest SGR basin has not gone through a complex structural history as the study area in SC. The project drilled one characterization borehole (Rizer # 1) in SC. The Rizer #1 was drilled but due to geologic problems, the project team was only able to drill to 1890 meters (6200 feet) instead of the proposed final depth 2744 meters (9002 feet). The drilling goals outlined in the original scope of work were not met. The project was only able to obtain 18 meters (59 feet) of conventional core and 106 rotary sidewall cores. All the conventional core and sidewall cores were in sandstone. We were unable to core any potential igneous caprock. Petrographic analysis of the conventional core and sidewall cores determined that the average porosity of the sedimentary material was 3.4% and the average permeability was 0.065 millidarcy. Compaction and diagenetic studies of the samples determined there would not be any porosity or permeability at depth in SC. In Georgia there appears to be porosity in the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

  4. Magnetic and transport properties of Mn{sub 2}CoAl oriented films

    SciTech Connect (OSTI)

    Jamer, Michelle E.; Assaf, Badih A.; Devakul, Trithep; Heiman, Don

    2013-09-30

    The structure, magnetic, and transport properties of thin films of the Heusler ferrimagnet Mn{sub 2}CoAl have been investigated for properties related to spin gapless semiconductors. Oriented films were grown by molecular beam epitaxy on GaAs substrates and the structure was found to transform from tetragonal to cubic for increasing annealing temperature. The anomalous Hall resistivity is found to be proportional to the square of the longitudinal resistivity and magnetization expected for a topological Berry curvature origin. A delicate balance of the spin-polarized carrier type when coupled with voltage gate-tuning could significantly impact advanced electronic devices.

  5. Luminescence properties of defects in GaN

    SciTech Connect (OSTI)

    Reshchikov, Michael A.; Morkoc, Hadis [Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2005-03-15

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

  6. SSL Demonstration: Bridge Lighting, Minneapolis, MN

    SciTech Connect (OSTI)

    2014-10-01

    DOE Solid-State Lighting GATEWAY summary brief for Phase II report on the longer-term performance of LED lighting installed in 2008 on the I-35W Bridge in Minneapolis, MN.

  7. Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report

    SciTech Connect (OSTI)

    SC Energy Office: Southern Alliance for Clean Energy

    2013-02-12

    This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

  8. This article was downloaded by: [Georgia Tech Library] On: 10 April 2013, At: 14:09

    E-Print Network [OSTI]

    Wu, Jeff

    be independently verified with primary sources. The publisher shall not be liable for any loss, actions, claimsThis article was downloaded by: [Georgia Tech Library] On: 10 April 2013, At: 14:09 Publisher

  9. PLEASE SCROLL DOWN FOR ARTICLE This article was downloaded by: [Georgia Technology Library

    E-Print Network [OSTI]

    Lieuwen, Timothy C.

    doses should be independently verified with primary sources. The publisher shall not be liable for anyPLEASE SCROLL DOWN FOR ARTICLE This article was downloaded by: [Georgia Technology Library] On: 20

  10. GEORGIA INSTITUTE OF TECHNOLOGY COLLEGE OF ENGINEERING 1 College of Engineering

    E-Print Network [OSTI]

    Li, Mo

    Electrical and Computer Engineering Industrial and Systems Engineering Materials Science and Engineering and Biomolecular Engineering Civil and Environmental Engineering Electrical and Computer Engineering IndustrialGEORGIA INSTITUTE OF TECHNOLOGY · COLLEGE OF ENGINEERING 1 College of Engineering Aerospace

  11. University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program

    E-Print Network [OSTI]

    Arnold, Jonathan

    University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program Program and scholarship between the two institutions. The two institutions are offering seed grants / pump-priming grants

  12. UMass INFORMSProfessor Anna Nagurney Dr. Garrow is an Associate Professor at the Georgia Institute of

    E-Print Network [OSTI]

    Nagurney, Anna

    at the Georgia Institute of Technology. She earned her Ph.D. at Northwestern University, with an emphasis and Logistics Society of INFORMS and Vice President of AGIFORS. Abstract: A new parameter estimation routine Management Models with Censored Data" " #12;

  13. Synthesis of galactosaminyl DD-chiro-inositols Georgia Marnera and Marc d'Alarcao*

    E-Print Network [OSTI]

    d'Alarcao, Marc

    Synthesis of galactosaminyl DD-chiro-inositols Georgia Marnera and Marc d'Alarcao* Michael Research.carres.2006.03.031 * Corresponding author. Tel.: +1 617 627 3686; fax: +1 617 627 3443; e-mail: marc

  14. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia

    SciTech Connect (OSTI)

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

  15. An Evaluation of Georgia's Institutional Conservation Program Preliminary Report - June 1989 

    E-Print Network [OSTI]

    Brown, M. L.; Downing, C.

    1989-01-01

    The Institutional Conservation Program (ICP) has been active in Georgia since 1980 and has distributed over $20 million in matching funds for conservation measures and energy studies. The purpose of the ICP is to reduce energy consumption in schools...

  16. EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

  17. Energy Conservation Recommendations, Implementation Costs, and Projected Paybacks for Georgia's Targeted Schools and Hospitals Conservation Program 

    E-Print Network [OSTI]

    Brown, M. L.; Moore, D. M.

    1988-01-01

    During the past year the Georgia Tech Research Institute performed technical assistance studies on over 100 school and hospital buildings under a program funded by the Governor's Office of Energy Resources. This program is known as the Targeted...

  18. Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel Funds

    E-Print Network [OSTI]

    Sherrill, David

    Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel funds may be used to meet any remaining costs not covered by the research advisor, GSF award___________________________________________________ Dates of Conference_____________________________________________________ Total estimated costs

  19. GEORGIA INSTITUTE OF TECHNOLOGY FABRICATED PROPERTY REPORT Revised 07-2014

    E-Print Network [OSTI]

    Li, Mo

    GEORGIA INSTITUTE OF TECHNOLOGY FABRICATED PROPERTY REPORT Revised 07-2014 TO: Property Control: ____________________________________________ Phone: _______________ COST OF PROPERTY Materials or Component Parts $ _______________ External Labor Costs $ _______________ Transportation $ _______________ Other Costs (explain on back

  20. Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel Funds

    E-Print Network [OSTI]

    Sherrill, David

    Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel funds may be used to meet any remaining costs not covered by the research advisor, SGA award_____________________________________________________ Total estimated costs for attending conference Transportation $_______________ Other Travel

  1. Computers and nautical archaeology: characterization of the C.S.S. Georgia wreck site 

    E-Print Network [OSTI]

    Baker, James Graham

    1982-01-01

    , Savannah District, to investigate, characterize, and make recommendations regarding the wreck site of a Civil War period Confederate ironclad vessel, the C. S. S. GEORGIA. The survey proved to be difficult, since visibility in the Savannah River around... than two hours per day. A study of the history of the C. S, S. GEORGIA left many questions unanswered, such as her length and breadth. In order to provide accu- rate information and a meaningful site assessment, a series of remote- sensing surveys...

  2. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  3. High Mn austenitic stainless steel

    DOE Patents [OSTI]

    Yamamoto, Yukinori (Oak Ridge, TN) [Oak Ridge, TN; Santella, Michael L (Knoxville, TN) [Knoxville, TN; Brady, Michael P (Oak Ridge, TN) [Oak Ridge, TN; Maziasz, Philip J (Oak Ridge, TN) [Oak Ridge, TN; Liu, Chain-tsuan (Knoxville, TN) [Knoxville, TN

    2010-07-13

    An austenitic stainless steel alloy includes, in weight percent: >4 to 15 Mn; 8 to 15 Ni; 14 to 16 Cr; 2.4 to 3 Al; 0.4 to 1 total of at least one of Nb and Ta; 0.05 to 0.2 C; 0.01 to 0.02 B; no more than 0.3 of combined Ti+V; up to 3 Mo; up to 3 Co; up to 1W; up to 3 Cu; up to 1 Si; up to 0.05 P; up to 1 total of at least one of Y, La, Ce, Hf, and Zr; less than 0.05 N; and base Fe, wherein the weight percent Fe is greater than the weight percent Ni, and wherein the alloy forms an external continuous scale including alumina, nanometer scale sized particles distributed throughout the microstructure, the particles including at least one of NbC and TaC, and a stable essentially single phase FCC austenitic matrix microstructure that is essentially delta-ferrite-free and essentially BCC-phase-free.

  4. Local environment of Mn in Mn delta-doped Si layers

    SciTech Connect (OSTI)

    Xiao, Q.F.; Kahwaji, S.; Monchesky, T.L.; Gordon, R.A.; Crozier, E.D.

    2009-11-09

    Dilute magnetic semiconductors combine both magnetic ordering and semiconducting behaviour, leading to potential spintronic applications. Silicon containing dilute Mn impurities is a potential dilute magnetic semiconductor. We have grown Mn delta-doped films by deposition of 0.7 of a monolayer of Mn on Si(001) by molecular beam epitaxy and capping the film with Si. The magnetic properties are likely sensitive to the distribution of Mn on substitutional or interstitial sites and the formation of metallic precipitates. We have used polarization-dependent XAFS to examine the local structure. We compare to a thicker MnSi film grown on Si(111) and also examine the influence of lead on the manganese environment when used as a surfactant in the growth process.

  5. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  6. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  7. Magnetic fields of HgMn stars

    E-Print Network [OSTI]

    Hubrig, S; Ilyin, I; Korhonen, H; Schoeller, M; Savanov, I; Arlt, R; Castelli, F; Curto, G Lo; Briquet, M; Dall, T H

    2012-01-01

    The frequent presence of weak magnetic fields on the surface of spotted late-B stars with HgMn peculiarity in binary systems has been controversial during the two last decades. We re-analyse available spectropolarimetric material by applying the moment technique on spectral lines of inhomogeneously distributed elements separately. Furthermore, we present new determinations of the mean longitudinal magnetic field for the HgMn star HD65949 and the hotter analog of HgMn stars, the PGa star HD19400, using FORS2 installed at the VLT. We also give new measurements of the eclipsing system AR Aur with a primary star of HgMn peculiarity which were obtained with the SOFIN spectropolarimeter installed at the Nordic Optical Telescope. We downloaded from the ESO archive the publically available HARPS spectra for eight HgMn stars and one normal and one superficially normal B-type star obtained in 2010. The application of the moment technique to the HARPS and SOFIN spectra allowed us to study the presence of the longitudina...

  8. Acoustic assisted actuation of Ni-Mn-Ga ferromagnetic shape memory alloys

    E-Print Network [OSTI]

    Peterson, Bradley William

    2006-01-01

    Ferromagnetic shape memory alloys (FSMA) have been shown in recent work to exhibit large magnetic field induced strains. The material generally requires a large threshold field (of order 3-4 kOe) to initiate the strain. ...

  9. Synthesis and Characterization of NiMnGa Ferromagnetic Shape Memory Alloy Thin Films 

    E-Print Network [OSTI]

    Jetta, Nishitha

    2011-10-21

    is tailored by varying several deposition parameters. Microstructure of the films has been investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM) techniques. Mechanical properties of as-deposited films have been probed using nano...

  10. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  11. Energy conserving site design case study: Shenandoah, Georgia. Final report

    SciTech Connect (OSTI)

    Not Available

    1980-01-01

    The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

  12. Spin reorientation and Ce-Mn coupling in antiferromagnetic oxypnictide CeMnAsO

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Qiang; Tian, Wei; Peterson, Spencer G.; Dennis, Kevin W.; Vaknin, David

    2015-02-18

    Structure and magnetic properties of high-quality polycrystlline CeMnAsO, a parent compound of the “1111”-type oxypnictides, have been investigated using neutron powder diffraction and magnetization measurements. We find that CeMnAsO undergoes a C-type antiferromagnetic order with Mn2+(S = 5/2) moments pointing along the c axis below a relatively high Néel temperature of TN = 347(1) K. Below TSR = 35 K, two simultaneous transitions occur where the Mn moments reorient from the c axis to the ab plane preserving the C-type magnetic order, and Ce moments undergo long-range AFM ordering with antiparallel moments pointing in the ab plane. Another transition tomore »a noncollinear magnetic structure occurs below 7 K. The ordered moments of Mn and Ce at 2 K are 3.32(4) ?B and 0.81(4)?B, respectively. We find that CeMnAsO primarily falls into the category of a local-moment antiferromagnetic insulator in which the nearest-neighbor interaction (J1) is dominant with J2 1/2 in the context of J1 – J2 – Jc model. The spin reorientation transition driven by the coupling between Ce and the transition metal seems to be common to Mn, Fe, and Cr ions, but not to Co and Ni ions in the isostructural oxypnictides. As a result, a schematic illustration of magnetic structures in Mn and Ce sublattices in CeMnAsO is presented.« less

  13. Category:Minneapolis, MN | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla, Georgia:Geothermal RegulatoryMicro-Earthquake Jump

  14. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  15. APS-DPP 2004, Savannah, Georgia 1 of 18T. Biewer, November 19th Edge Ion Heating by Launched High

    E-Print Network [OSTI]

    Biewer, Theodore

    Society Division of Plasma Physics Meeting Savannah, Georgia, 2004 #12;46th APS-DPP 2004, Savannah46th APS-DPP 2004, Savannah, Georgia 1 of 18T. Biewer, November 19th , 2004 Edge Ion Heating Physics Laboratory P.M. Ryan Oak Ridge National Laboratory and the NSTX Team 46th American Physical

  16. Ossabest: E-Exploration of Ossabaw Island for Students and Teachers: Information Technologies Education Meets Georgia Performance Standards

    E-Print Network [OSTI]

    Reed, Joy

    Ossabest: E-Exploration of Ossabaw Island for Students and Teachers: Information Technologies on a Georgia barrier island. Teaching and learning experiences are enhanced by educational materials designed to meet Georgia Performance Standards. A project web portal offers custom sub-systems created for defined

  17. 190 Ben Burton Road, Suite C Bogart, Georgia 30622 706.354.1800 Fax: 706.354.6867 www.geohydro.com

    E-Print Network [OSTI]

    Arnold, Jonathan

    ) The following table presents seismic design values interpolated from applicable seismic hazard maps from The University of Georgia 382 East Broad Street Athens, Georgia 30602 Revised Report of Probabilistic Seismic probabilistic seismic hazard analysis (PSHA) for the main campus of The University of Georgia in Athens

  18. Formation of MnSb during the growth of MnSi layers in the presence of an Sb flux

    E-Print Network [OSTI]

    Pennycook, Steve

    Epitaxial growth of silicide layers on Si substrates has attracted much attention due to their technologicalFormation of MnSb during the growth of MnSi layers in the presence of an Sb flux K. Matsuda, Y have been performed to elucidate the growth mechanism. The MnSi layer was grown by reactive deposition

  19. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect (OSTI)

    Wade, M. [Oak Ridge National Lab., TN (United States); Billig, P. [Camp Dresser and McKee, Inc., Denver, CO (United States)

    1993-05-01

    Landfill No. 4 and the sludge lagoon at Robins Air Force Base, Warner Robins, Georgia, were added to the United States Environmental Protection Agency (EPA) National Priorities List in 1987 because of highpotential for contaminant migration. Warner Robins is located approximately 90 miles southeast of Atlanta. In 1990 CH2M HILL conducted a Remedial Investigation at the base that recommended that further ecological assessment investigations be conducted (CH2M HILL 1990). The subject paper is the result of this recommendation. The ecological study was carried out by the Hazardous Waste Remedial Actions Program (HAZWRAP)Division of Martin Marietta Energy Systems, Inc., working jointly with its subcontractor CDM (CDM 1992a). The primary area of investigation (Zone 1) included the sludge lagoon, Landfill No. 4, the wetland area east of the landfill and west of Hannah Road (including two sewage treatment ponds), and the area between Hannah Road and Horse Creek (Fig. 1). The bottomland forest wetlands of Zone 1 extend from the landfill east to Horse Creek. Surface water and groundwater flow across Zone 1 is generally in an easterly direction toward Horse Creek. Horse Creek is a south-flowing tributary of the Ocmulgee River Floodplain. The objective of the study was to perform a quantitative analysis of ecological risk associated with the ecosystems present in Zone 1. This investigation was unique because the assessment was to be based upon many measurement endpoints resulting in both location-specific data and data that would assess the condition of the overall ecosystem. The study was segregated into five distinct field investigations: hydrology, surface water and sediment, aquatic biology, wetlands ecology, and wildlife biology.

  20. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  1. Influence of interstitial Mn on magnetism in room-temperature ferromagnet Mn(1+delta)Sb

    SciTech Connect (OSTI)

    Taylor, Alice E [ORNL; Berlijn, Tom [ORNL; Hahn, Steven E [ORNL; May, Andrew F [ORNL; Williams, Travis J [ORNL; Poudel, Lekhanath N [ORNL; Calder, Stuart A [ORNL; Fishman, Randy Scott [ORNL; Stone, Matthew B [ORNL; Aczel, Adam A [ORNL; Cao, Huibo [ORNL; Lumsden, Mark D [ORNL; Christianson, Andrew D [ORNL

    2015-01-01

    We report elastic and inelastic neutron scattering measurements of the high-TC ferromagnet Mn(1+delta)Sb. Measurements were performed on a large, TC = 434 K, single crystal with interstitial Mn content of delta=0.13. The neutron diffraction results reveal that the interstitial Mn has a magnetic moment, and that it is aligned antiparallel to the main Mn moment. We perform density functional theory calculations including the interstitial Mn, and find the interstitial to be magnetic in agreement with the diffraction data. The inelastic neutron scattering measurements reveal two features in the magnetic dynamics: i) a spin-wave-like dispersion emanating from ferromagnetic Bragg positions (H K 2n), and ii) a broad, non-dispersive signal centered at forbidden Bragg positions (H K 2n+1). The inelastic spectrum cannot be modeled by simple linear spin-wave theory calculations, and appears to be significantly altered by the presence of the interstitial Mn ions. The results show that the influence of the int

  2. CaMn2Al10: Itinerant Mn magnetism on the verge of magnetic order

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Steinke, L.; Simonson, J. W.; Yin, W. -G.; Smith, G. J.; Kistner-Morris, J. J.; Zellman, S.; Puri, A.; Aronson, M. C.

    2015-07-24

    We report the discovery of CaMn2Al10, a metal with strong magnetic anisotropy and moderate electronic correlations. Magnetization measurements find a Curie-Weiss moment of 0.83?B/Mn, significantly reduced from the Hund's rule value, and the magnetic entropy obtained from specific heat measurements is correspondingly small, only ? 9% of Rln2. These results imply that the Mn magnetism is highly itinerant, a conclusion supported by density functional theory calculations that find strong Mn-Al hybridization. Consistent with the layered nature of the crystal structure, the magnetic susceptibility ? is anisotropic below 20 K, with a maximum ratio of ?[010]/?[001] ? 3.5. A strong power-lawmore »divergence ?(T) ~ T–1.2 below 20 K implies incipient ferromagnetic order, an Arrott plot analysis of the magnetization suggests a vanishing low Curie temperature TC ~ 0. Our experiments indicate that CaMn2Al10 is a rare example of a system where the weak and itinerant Mn-based magnetism is poised on the verge of order.« less

  3. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  4. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  5. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  6. BYRDINE F. LEWIS SCHOOL OF NURSING AND HEALTH PROFESSIONS GEORGIA STATE UNIVERSITY

    E-Print Network [OSTI]

    Frantz, Kyle J.

    1 BYLAWS* BYRDINE F. LEWIS SCHOOL OF NURSING AND HEALTH PROFESSIONS GEORGIA STATE UNIVERSITY Professions: April 4, 2013 #12;2 ARTICLE I PURPOSE Section 1. To provide the essential framework governing Professions (BFLSNHP) that is composed of the School of Nursing, Departments of Nutrition, Physical Therapy

  7. Approved Program of Study for Undergraduate Minors Georgia Institute of Technology

    E-Print Network [OSTI]

    Sherrill, David

    of depth courses related to energy systems. A list of acceptable courses which meet the depth requirementApproved Program of Study for Undergraduate Minors Georgia Institute of Technology Office of the Registrar 2015-2016 Minor in Energy Systems (Track for Chemistry and Biochemistry Students) Please type

  8. Curriculum Innovation Award Center for the Enhancement of Teaching and Learning, Georgia Tech

    E-Print Network [OSTI]

    Gaucher, Eric

    Curriculum Innovation Award Center for the Enhancement of Teaching and Learning, Georgia Tech Nomination Packet for Dr. Tristan Utschig February 2015 Table of Contents Description of the Innovation . . . . . . 1 Problem or student learning issue it addresses 1 Objectives of the innovation 2 Learning outcomes

  9. Project Title Improved Emission Models for Project Evaluation (MOVES-Matrix) University Georgia Institute of Technology

    E-Print Network [OSTI]

    California at Davis, University of

    Project Title Improved Emission Models for Project Evaluation (MOVES-Matrix) University Georgia or organization) DOT - $92,292.15 Total Project Cost $92,292.15 Agency ID or Contract Number DTRT13-G-UTC29 Start and End Dates November 1, 2013 ­ June 30, 2015 Brief Description of Research Project Local governments

  10. Recommendations for Improving Fecal Coliform Pollution Control in Gwinnett County, Georgia

    E-Print Network [OSTI]

    Radcliffe, David

    Recommendations for Improving Fecal Coliform Pollution Control in Gwinnett County, Georgia Upper for Improving Fecal Coliform Pollution Control 2 1.0 BACKGROUND and INTRODUCTION The 1972 Amendments to the Federal Clean Water Act require the creation of a Total Maximum Daily Load (TMDL) for a body of water

  11. Color Removal from Pulp Mill Effluent Using Coal Ash Produced from Georgia Coal Combustion Power Plants

    E-Print Network [OSTI]

    Hutcheon, James M.

    Color Removal from Pulp Mill Effluent Using Coal Ash Produced from Georgia Coal Combustion Power color from pulp mill effluent using coal ash. Prevent coal ash adsorbent from leaching arsenic, chromium, lead, and zinc. Define a treatment procedure using coal ash that will result in the maximum

  12. The Georgia Tech Unmanned Aerial Research Vehicle: GTMax Eric N. Johnson* and Daniel P. Schrage

    E-Print Network [OSTI]

    Johnson, Eric N.

    The Georgia Tech Unmanned Aerial Research Vehicle: GTMax Eric N. Johnson* and Daniel P. Schrage This paper describes the design, development, and operation of a research Unmanned Aerial Vehicle (UAV be utilized. INTRODUCTION This paper presents the development of an open system Unmanned Aerial Vehicle (UAV

  13. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  14. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  15. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  16. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  17. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  18. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect (OSTI)

    Not Available

    2011-05-01

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  19. A Unit of the University System of Georgia An Equal Education and Employment Opportunity Institution Environmental Health and Safety

    E-Print Network [OSTI]

    Li, Mo

    A Unit of the University System of Georgia An Equal Education and Employment Opportunity Institution Environmental Health and Safety GT Fire Safety Office 955 Fowler Street, 3rd Floor Room 301A

  20. Georgia Southern University Career Services Williams Center (912) 478-5197 www.georgiasouthern.edu/career/ Explore. Experience. Excel.

    E-Print Network [OSTI]

    Hutcheon, James M.

    · Enterprise Resource Planning Sys. (SAP) · Accounting Information Systems · Business Application Development Developers · Project Analysts · Technical Consultant · Systems Programmer · Internet Developers · Application System Managers · Project Managers What Can I Do With A Major In . . . INFORMATION SYSTEMS #12;Georgia

  1. EA-1865: Department of Energy Loan Guarantee to Kior, Inc., for Biorefinery Facilities in Georgia, Mississippi, and Texas

    Broader source: Energy.gov [DOE]

    This EA will evaluate the environmental impacts of a proposal to issue a Federal loan guarantee to Kior, Inc., for biorefinery facilities in Georgia, Mississippi, and Texas. This EA is on hold.

  2. c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering.

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    c° Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School. If the MOSFET is in the pinch-off region, the following equations for ID hold: ID = K (VGS - VT H)2 (5) 2 #12

  3. Experimental and first-principles study of ferromagnetism in Mn-doped zinc stannate nanowires

    SciTech Connect (OSTI)

    Deng Rui; Zhou Hang; Qin Jieming; Wan Yuchun; Jiang Dayong; Liang Qingcheng [School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022 (China); Li Yongfeng [Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012 (China); Wu, Tom [Physical Sciences and Engineering Division, Solar and Photovoltaics Engineering Research Center, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia); Yao Bin [State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China); Liu Lei [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No.3888 Dongnanhu Road, Changchun 130033 (China)

    2013-07-21

    Room temperature ferromagnetism was observed in Mn-doped zinc stannate (ZTO:Mn) nanowires, which were prepared by chemical vapor transport. Structural and magnetic properties and Mn chemical states of ZTO:Mn nanowires were investigated by X-ray diffraction, superconducting quantum interference device (SQUID) magnetometry and X-ray photoelectron spectroscopy. Manganese predominantly existed as Mn{sup 2+} and substituted for Zn (Mn{sub Zn}) in ZTO:Mn. This conclusion was supported by first-principles calculations. Mn{sub Zn} in ZTO:Mn had a lower formation energy than that of Mn substituted for Sn (Mn{sub Sn}). The nearest neighbor Mn{sub Zn} in ZTO stabilized ferromagnetic coupling. This observation supported the experimental results.

  4. Alignment of micro-crystals of Mn12-acetate and direct observation of single molecules thereof 

    E-Print Network [OSTI]

    Seo, Dongmin

    2009-05-15

    This dissertation focuses on three separate studies. First, magnetization of the Mn12- acetate was studied by low temperature hysteresis loops and DC magnetization data on magnetically aligned Mn12-acetate micro-crystals. Secondly, Mn12-acetate thin...

  5. Design of Semiconducting Tetrahedral Mn 1 ? x Zn x O Alloys and Their Application to Solar Water Splitting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; Zakutayev, Andriy; Lany, Stephan

    2015-05-18

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn??xZnxO alloys. At Zn compositions above x ? 0.3, thin films ofmore »these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. A proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.« less

  6. Design of Semiconducting Tetrahedral Mn 1 ? x Zn x O Alloys and Their Application to Solar Water Splitting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; Zakutayev, Andriy; Lany, Stephan

    2015-05-01

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn??xZnxO alloys. At Zn compositions above x ? 0.3, thin films of these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. A proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.

  7. Electron tunneling studies of Mn12-Acetate 

    E-Print Network [OSTI]

    Ma, Lianxi

    2008-10-10

    laser deposition (PLD) was used to deposit two monolayers of Mn 12 -Acetate on thin Pt wires (diame- ter 0.001 in). The electron tunneling current was measured with typical bias voltages from -1 to 1 V at liquid helium temperature, 4.2 K. I, dI/dV, and d... 2 I/dV 2 signals were directly acquired with the aid of a current amplifier and two lock-in-amplifiers. Results show that the differential conductance is approximately 10 ?6 S for bias volt- ages 0.04 V ?|V |? 1 V and exhibits a strong voltage...

  8. Spin caloritronics in graphene with Mn

    SciTech Connect (OSTI)

    Torres, Alberto Lima, Matheus P. Fazzio, A.; Silva, Antônio J. R. da

    2014-02-17

    We show that graphene with Mn adatoms trapped at single vacancies features spin-dependent Seebeck effect, thus enabling the use of this material for spin caloritronics. A gate potential can be used to tune its thermoelectric properties in a way it presents either a total spin polarized current, flowing in one given direction, or currents for both spins flowing in opposite directions without net charge transport. Moreover, we show that the thermal magnetoresistance can be tuned between ?100% and +100% by varying a gate potential.

  9. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  10. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  11. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  12. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  13. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  14. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  15. Landscape influences on headwater streams on Fort Stewart, Georgia, USA

    SciTech Connect (OSTI)

    Jager, Yetta [ORNL; Bevelhimer, Mark S [ORNL; al., et. [Various Institutes

    2011-01-01

    Military landscapes represent a mixture of undisturbed natural ecosystems, developed areas, and lands that support different types and intensities of military training. Research to understand water-quality influences of military landscapes usually involves intensive sampling in a few watersheds. In this study, we developed a survey design of accessible headwater watersheds intended to improve our ability to distinguish land water relationships in general, and training influences, in particular, on Fort Stewart, GA. We sampled and analyzed water from watershed outlets. We successfully developed correlative models for total suspended solids (TSS), total nitrogen (TN), organic carbon (OC), and organic nitrogen (ON), which dominated in this blackwater ecosystem. TSS tended to be greater in samples after rainfall and during the growing season, and models that included %Wetland suggested a build-and-flush relationship. We also detected a positive association between TSS and tank-training, which suggests a need to intercept sediment-laden runoff from training areas. Models for OC showed a negative association with %Grassland. TN and ON both showed negative associations with %Grassland, %Wetland, and %Forest. Unexpected positive associations were observed between OC and equipmenttraining activity and between ON and %Bare ground ? Roads. Future studies that combine our survey-based approach with more intensive monitoring of the timing and intensity of training would be needed to better understand the mechanisms for these empirical relationships involving military training. Looking beyond local effects on Fort Stewart streams, we explore questions about how exports of OC and nitrogen from coastal military installations ultimately influence estuaries downstream.

  16. Magnetic Moment Enhancement for Mn7 Cluster on Graphene

    SciTech Connect (OSTI)

    Liu, Xiaojie [Ames Laboratory; Wang, Cai-Zhuang [Ames Laboratory; Lin, Hai-Qing [Beijing Computational Science Research Center; Ho, Kai-Ming [Ames Laboratory

    2014-08-21

    Mn7 cluster on graphene with different structural motifs and magnetic orders are investigated systematically by first-principles calculations. The calculations show that Mn7 on graphene prefers a two-layer motif and exhibits a ferrimagnetic coupling. The magnetic moment of the Mn7 cluster increases from 5.0 ?B at its free-standing state to about 6.0 ?B upon adsorption on graphene. Mn7 cluster also induces about 0.3 ?B of magnetic moment in the graphene layer, leading to an overall enhancement of 1.3 ?B magnetic moment for Mn7 on graphene. Detail electron transfer and bonding analysis have been carried out to investigate the origin of the magnetic enhancement.

  17. Magnetic coupling in neutral and charged Cr{sub 2}, Mn{sub 2}, and CrMn dimers

    SciTech Connect (OSTI)

    Desmarais, N. [Institut de Physique Experimentale, Ecole Polytechnique Federale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, (Switzerland)] [Institut de Physique Experimentale, Ecole Polytechnique Federale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, (Switzerland); Reuse, F. A. [Institut de Physique Experimentale, Ecole Polytechnique Federale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, (Switzerland)] [Institut de Physique Experimentale, Ecole Polytechnique Federale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, (Switzerland); Khanna, S. N. [Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284-2000 (United States)] [Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284-2000 (United States)

    2000-04-01

    Theoretical ab initio studies of neutral, cationic and anionic Cr{sub 2}, Mn{sub 2}, and CrMn dimers have been carried out to explore the progression of magnetic coupling with the number of electrons. It is shown that while Cr{sub 2} and Cr{sub 2}{sup -} have antiferromagnetically coupled atomic spins, Cr{sub 2}{sup +} has a ferromagnetic ground state closely followed by an antiferromagnetic state. On the other hand, all Mn{sub 2} dimers are ferromagnetic, irrespective of the charge. The neutral CrMn is ferrimagnetic while the charged CrMn are antiferromagnetic. In all cases, the charged dimers are found to be more stable than the neutral ones. The results are compared with available calculations and experiments and the difficulties associated with theoretical description and the experimental interpretations are discussed. (c) 2000 American Institute of Physics.

  18. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  19. Georgia Tech Manufacturing Institute | 813 Ferst Drive, N.W. | Atlanta, GA 30332-0560 | (404) 894-9100 | www.manufacturing.gatech.edu Manufacturing is in Georgia Tech's DNA: GTMI Binds it Together

    E-Print Network [OSTI]

    Das, Suman

    -suited for the rapidly evolving world of manufacturing. Collaboration and Innovation are Core Strengths Among GTMI partners · Awarded a grant to develop and lead the Consortium for Accelerated Innovation and Insertion for electronics, solar energy, woodworking and precision machining industries that allow companies to easily work

  20. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    Mn-Si (red squares) and Mn-Ge distances (blue circles) d asof the number of Si or Ge nearest neighbours N c ; (c) localthree Mn atoms with different N c in a-Mn 0.094 Ge 0.906 .

  1. Study of the beta delayed particle emission from 48Mn and its relevance for explosive nucleosynthesis

    E-Print Network [OSTI]

    Martel, I

    2015-01-01

    Study of the beta delayed particle emission from 48Mn and its relevance for explosive nucleosynthesis

  2. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  3. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  4. PHYSICAL REVIEW B 84, 245306 (2011) Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    2011-01-01

    of Physics, Polish Academy of Sciences, al. Lotnik´ow 32/46, PL-02-668 Warszawa, Poland 3 Department a transition metal (TM) compound (to form a condensed magnetic semiconductor) or a TM.2,3 Interest- ingly

  5. Atlanta, Georgia 30332-0205 U.S.A. Phone: 4048942300 web site: http://www.isye.gatech.edu Fax: 4048942301

    E-Print Network [OSTI]

    Gaucher, Eric

    : 404·894·2301 A Unit of the University System of Georgia An Equal Education and Employment Opportunity, 2014 Dear Members of the CETL Awards Committee, I am pleased to nominate Assistant Professor Kamran://www.isye.gatech.edu Fax: 404·894·2301 A Unit of the University System of Georgia An Equal Education and Employment

  6. t h e s c h e l l e r c o l l e g e o f b u s i n e s s Georgia Tech PhD Program

    E-Print Network [OSTI]

    Li, Mo

    're creating a new standard in business education. Sincerely, Steve Salbu Dean of Georgia Tech's Schellert h e s c h e l l e r c o l l e g e o f b u s i n e s s Georgia Tech PhD Program Accounting, Organizational Behavior, Strategic Management Application and Admission Frequently Asked Questions Georgia Tech

  7. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  8. Electronic interactions between gold films and mn12-acetate 

    E-Print Network [OSTI]

    Means, Joel Lewis

    2009-05-15

    Interactions between Mn12–acetate molecular magnets and thin gold films have been explored in light of the theory of weak localization. Low-temperature measurements of the magnetoresistance of gold films of varying thicknesses, with and without...

  9. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  10. A multicolor, broadband (520m), quaternary-capped InAs/GaAs quantum dot infrared photodetector

    E-Print Network [OSTI]

    Perera, A. G. Unil

    , Mumbai 400076, India 2 Department of Physics & Astronomy, Georgia State University, Atlanta, Georgia. Using strain field and multi-band k Á p theory, we map specific bound-to-bound and bound

  11. Baldwin County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex AAustriaBiofuels Brasil JumpGeorgia:BalchAlabama:

  12. Ambi-site substitution of Mn in lanthanum germanate apatites

    SciTech Connect (OSTI)

    Kendrick, E. [Chemical Sciences, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Knight, K.S. [ISIS Facility, Rutherford Appleton Laboratory, Harwell Science and Innovation Campus, Didcot OX11 0QX (United Kingdom); Slater, P.R., E-mail: p.r.slater@bham.ac.uk [School of Chemistry, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

    2009-08-05

    A neutron diffraction study at 4 K of the Mn doped lanthanum germanate apatite-type oxide ion conductor of nominal starting composition 'La{sub 9.5}Mn{sub 0.5}(GeO{sub 4}){sub 6}O{sub 2.75}' is reported. The structure was refined in space group P6{sub 3}/m, although high thermal displacement parameters were observed for the oxide ion sites (particularly O3, and O4). Reduced thermal displacement parameters were obtained by splitting the O3 site, and allowing the O4 oxygen to move off site, which may indicate local regions of lower symmetry within the structure. In addition, the data suggested ambi-site substitution of Mn, with it being present on both the Ge site and the La site. Assuming no change in La:Mn:Ge ratio, a composition of La{sub 9.18}Mn{sub 0.28}(GeO{sub 4}){sub 5.8}(MnO{sub 4}){sub 0.2}O{sub 2} was determined. As such there are nominally no interstitial oxide ions, but rather cation vacancies on the La site. Therefore, the high conductivity for this sample is most likely related to the introduction of Frenkel-type defects at higher temperature, as previously proposed for other apatite-type systems containing vacancies on the La site.

  13. Comparison of the EXAFS Spectra of Heteronuclear MnCa/Sr Model Complexes to the Oxygen-Evolving Mn(4)Ca Complex of Photosystem II

    SciTech Connect (OSTI)

    Mishra, A.; Yano, J.; Pushkar, Y.; Abboud, K.A.; Yachandra, V.K.; Christou, G.

    2009-06-03

    Heterometallic Mn-Ca and Mn-Sr complexes have been prepared and employed as model complexes for Ca and Sr EXAFS spectral comparisons with the Oxygen-Evolving Complex (OEC) of Photosystem II (PS II); these have revealed similarities that support the presence of at least one O atom bridge between the Mn and Ca/Sr in the OEC.

  14. Review of Multi-Person Exposure Calls to a Regional Poison Control Center

    E-Print Network [OSTI]

    Morgan, Brent W; Skinner, Carl G; Kleiman, Richard J; Geller, Robert J; Chang, Arthur S

    2010-01-01

    Exposure Calls to a Regional Poison Control Center Brent W.Medicine and the Georgia Poison Center, Atlanta, GA †of Pediatrics and the Georgia Poison Center, Atlanta, GA

  15. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  16. Disordered electronic and magnetic systems - transition metal (Mn) and rare earth (Gd) doped amorphous group IV semiconductors (C, Si, Ge)

    E-Print Network [OSTI]

    Zeng, Li

    2007-01-01

    Magnetization data for a-Mn 0.15 Ge 0.85 ?lms mea- suredSi 1?x and a-Mn x Ge 1?x samples. . . . . . . . . . . . . .both a-Mn x Si 1?x and a-Mn x Ge 1?x as a func- tion of Mn

  17. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  18. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  19. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  20. 1Georgia Southern University Fact Book 2007--2008 I am pleased to present the 2007-08 edition of the Georgia Southern University Fact Book. This publication is the definitive

    E-Print Network [OSTI]

    Hutcheon, James M.

    1Georgia Southern University Fact Book 2007--2008 I am pleased to present the 2007-08 edition throughout the country and the world with the launch of our online degree programs. These programs enable- tinues to expand, adding high-tech facilities to our student-centered campus and new degree programs

  1. 1Georgia Southern University Fact Book 2006--2007 I am pleased to present the 2006-07 edition of the Georgia Southern University Fact Book. This publication is the definitive

    E-Print Network [OSTI]

    Hutcheon, James M.

    1Georgia Southern University Fact Book 2006--2007 I am pleased to present the 2006-07 edition, but new degree programs and outreach initiatives benefiting the people and economic development of our distinction to the institution through ongoing research, scholarship and community service. This edition

  2. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  3. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  4. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  5. Local control of magnetocrystalline anisotropy in (Ga,Mn)As microdevices: Demonstration in current-induced switching 

    E-Print Network [OSTI]

    Wunderlich, J.; Irvine, A. C.; Zemen, J.; Holy, V.; Rushforth, A. W.; De Ranieri, E.; Rana, U.; Vyborny, K.; Sinova, Jairo; Foxon, C. T.; Campion, R. P.; Williams, D. A.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    determines the magnetic configuration. Experiments and theoretical modeling are presented for lithographically patterned microchannels, and the phenomenon is attributed to lattice relaxations across the channels. The utility of locally controlled magnetic...

  6. Delocalization and hybridization enhance the magnetocaloric effect in Ni2Mn0.75Cu0.25Ga

    E-Print Network [OSTI]

    Roy, Sujoy

    2008-01-01

    USA Manuel Lujan Neutron Scattering Center, Los Alamosof the Manuel Lujan Neutron Scattering Center, Los Alamosthe use of the Lujan Neutron Scattering Center at LANSCE,

  7. Chemical synthesis of crystalline, pure or Mn-doped ZnGa2O4 powders at 90 C

    E-Print Network [OSTI]

    Tas, A. Cuneyt

    into luminous energy. In EL devices, light is gen- erated by impact excitation of a light emitting center-ray diffraction, scanning electron microscopy, energy-dispersive x-ray spectroscopy, inductively-coupled plasma present in the material by high-energy electrons, which gain their high energy from an electric field

  8. A dislocation model for the magnetic field induced shape memory effect in Ni2MnGa

    E-Print Network [OSTI]

    Ferreira, Paulo J.

    , such as Nitinol. In addition, MSM alloys can easily respond at over 50 times greater fre- quencies (250 Hz) than

  9. Above-bandgap magneto-optical Kerr effect in ferromagnetic Ga(1-x)Mn(x)As 

    E-Print Network [OSTI]

    Sun, C.; Kono, J.; Cho, Y. -H; Wojcik, A. K.; Belyanin, Alexey; Munekata, H.

    2011-01-01

    Historical Commission (THC), Texas Archeological Research Laboratory (TARL), Texas State Library, Fort Griffin Special Utility District (SUD), Jacob & Martin, Ltd., and BVRA....

  10. Segregation of Mn2+ Dopants as Interstitials in SrTiO3 Grain Boundaries

    SciTech Connect (OSTI)

    Yang, Hao; Kotula, Paul G.; Sato, Yukio; Chi, Miaofang; Ikuhara, Yuichi; Browning, Nigel D.

    2013-10-03

    Mn doped SrTiO3 shows promising magnetic and electrical properties, but the doping mechanism remains unclear. In this research Mn4+ is found to substitute Ti in bulk SrTiO3, but Mn2+ segregates inside grain boundaries at both Sr and interstitial sites. Mn interstitial doping has never been reported, but is found possible with the formation of Sr vacancies. This finding is significantly different from the amphoteric doping of Mn2+ substituting Sr and Mn4+ substituting Ti sites, therefore leads to different understanding on the defect mediated electrical and magnetic properties of transition metal doped perovskites.

  11. Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation Exercise

    Broader source: Energy.gov [DOE]

    COVINGTON, Ga. – Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help them prepare for an actual incident.

  12. Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper Science and Technology; Georgia Institute of Technology, Atlanta, GA.

    E-Print Network [OSTI]

    Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper lignocellulosics to biodiesel fuel Feedstocks ABSTRACT This poster examines the potential of utilizing waste paper

  13. c Copywright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering.

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    c° Copywright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School mode or the saturation region when vDS vGS - VTO, where VTO is the threshold or pinch-off voltage parameter which accounts for the change in with drain-source voltage. Because iG ' 0 in the pinch

  14. Georgia Institute of Technology-Minor Degree in Chemistry Page 1 of 2 Date: February 12, 2013 IUCC approval

    E-Print Network [OSTI]

    Sherrill, David

    ) CHEM 4699 Undergraduate Research CHEM 4740 Atmospheric Chemistry (3 credits) CHEM 4775 Polymer Science and Eng. I (3 credits) CHEM 4776 Polymer Science and Engi. II (3 credits) CHEM 4803 Special Topics (withGeorgia Institute of Technology- Minor Degree in Chemistry Page 1 of 2 Date: February 12, 2013 IUCC

  15. Georgia Institute of Technology-Minor Degree in Chemistry Page 1 of 2 Date: January 14, 2014 IUCC approval

    E-Print Network [OSTI]

    Sherrill, David

    credits) CHEM 4775 Polymer Science and Eng. I (3 credits) CHEM 4776 Polymer Science and Engi. II (3Georgia Institute of Technology- Minor Degree in Chemistry Page 1 of 2 Date: January 14, 2014 IUCC of Technology- Minor Degree in Chemistry Page 2 of 2 Date: January 14, 2014 IUCC approval CHEM 3511 Survey

  16. Ion Implanted GaAshnGaAsLateral Injection Ridge QW Laser for QEICs: Study of Operation Mechanisms

    E-Print Network [OSTI]

    Avrutsky, Ivan

    ,Canada. 'University of Virginia, Dept. of Electrical Engineering, Charlottesville, VA; currently with APA Optics Inc., MN. 3NortelTechnology,Nepean, Ontario, Canada. 4Rensselaer

  17. Spectroscopic variability and magnetic fields of HgMn stars

    E-Print Network [OSTI]

    Hubrig, S; Ilyin, I; Korhonen, H; Savanov, I S; Dall, T; Schoeller, M; Cowley, C R; Briquet, M; Arlt, R

    2011-01-01

    The discovery of exotic abundances, chemical inhomogeneities, and weak magnetic fields on the surface of late B-type primaries in spectroscopic binaries has important implications not only for our understanding of the formation mechanisms of stars with Hg and Mn peculiarities themselves, but also for the general understanding of B-type star formation in binary systems. The origin of the abundance anomalies observed in late B-type stars with HgMn peculiarity is still poorly understood. The connection between HgMn peculiarity and membership in binary and multiple systems is supported by our observations during the last decade. The important result achieved in our studies of a large sample of HgMn stars is the finding that most HgMn stars exhibit spectral variability of various chemical elements, proving that the presence of an inhomogeneous distribution on the surface of these stars is a rather common characteristic and not a rare phenomenon. Further, in the studied systems, we found that all components are che...

  18. The blue supergiant MN18 and its bipolar circumstellar nebula

    E-Print Network [OSTI]

    Gvaramadze, V V; Bestenlehner, J M; Bodensteiner, J; Langer, N; Greiner, J; Grebel, E K; Berdnikov, L N; Beletsky, Y

    2015-01-01

    We report the results of spectrophotometric observations of the massive star MN18 revealed via discovery of a bipolar nebula around it with the Spitzer Space Telescope. Using the optical spectrum obtained with the Southern African Large Telescope, we classify this star as B1 Ia. The evolved status of MN18 is supported by the detection of nitrogen overabundance in the nebula, which implies that it is composed of processed material ejected by the star. We analysed the spectrum of MN18 by using the code CMFGEN, obtaining a stellar effective temperature of \\approx 21 kK. The star is highly reddened, E(B-V)\\approx 2 mag. Adopting an absolute visual magnitude of M_V=-6.8\\pm0.5 (typical of B1 supergiants), MN18 has a luminosity of log L/Lsun \\approx 5.42\\pm0.30, a mass-loss rate of \\approx (2.8-4.5)\\times10^{-7} Msun/yr, and resides at a distance of \\approx 5.6^{+1.5} _{-1.2} kpc. We discuss the origin of the nebula around MN18 and compare it with similar nebulae produced by other blue supergiants in the Galaxy (She...

  19. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  20. Synthesis, characterization and electrochemical performance of Al-substituted Li?MnO?

    SciTech Connect (OSTI)

    Dhital, Chetan [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Huq, Ashfia [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Paranthaman, Mariappan Parans [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Manivannan, Ayyakkannu [National Energy Technology Lab. (NETL), Morgantown, WV (United States); West Virginia Univ., Morgantown, WV (United States); Torres-Castro, Loraine [Univ. of Puerto Rico, San Juan (Puerto Rico); Shojan, Jifi [Univ. of Puerto Rico, San Juan (Puerto Rico); Julien, Christian M. [Univ. Pierre et Marie Curie, Paris (France); Katiyar, Ram S. [Univ. of Puerto Rico, San Juan (Puerto Rico)

    2015-01-01

    Li?MnO? is known to be electrochemically inactive due to Mn in tetravalent oxidation state. Several compositions such as Li?MnO?, Li1.5Al0.17MnO?, Li1.0Al0.33MnO? and Li0.5Al0.5MnO? were synthesized by a sol-gel Pechini method. All the samples were characterized with XRD, Raman, XPS, SEM, Tap density and BET analyzer. XRD patterns indicated the presence of monoclinic phase for pristine Li?MnO? and mixed monoclinic/spinel phases (Li2-xMn1-yAlx+yO3+z) for Al-substituted Li?MnO? compounds. The Al substitution seems to occur both at Li and Mn sites, which could explain the presence of spinel phase. XPS analysis for Mn 2p orbital reveal a significant decrease in binding energy for Li1.0Al0.33MnO? and Li0.5Al0.5MnO? compounds. Cyclic voltammetry, charge/discharge cycles and electrochemical impedance spectroscopy were also performed. A discharge capacity of 24 mAh g?¹ for Li?MnO?, 68mAh g?¹ for Li1.5Al0.17MnO?, 58 mAh g?¹ for Li1.0Al0.33MnO? and 74 mAh g?¹ for Li0.5Al0.5MnO? were obtained. Aluminum substitutions increased the discharge capacity and the spinel phase.

  1. Synthesis, characterization and electrochemical performance of Al-substituted Li?MnO?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dhital, Chetan; Huq, Ashfia; Paranthaman, Mariappan Parans; Manivannan, Ayyakkannu; Torres-Castro, Loraine; Shojan, Jifi; Julien, Christian M.; Katiyar, Ram S.

    2015-08-08

    Li2MnO3 is known to be electrochemically inactive due to Mn in tetravalent oxidation state. Several compositions such as Li2MnO3 , Li1.5Al0.17MnO3, Li1.0Al0.33MnO3 and Li0.5Al0.5MnO3 were synthesized by a sol–gel Pechini method. All the samples were characterized with x-ray diffraction, Raman, x-ray photoelectron spectroscopy, scanning electron microscopy, Tap density and BET analyzer. X-ray diffraction patterns indicated the presence of monoclinic phase for pristine Li2MnO3and mixed monoclinic/spinel phases (Li2 - xMn1 - yAlx + yO3 + z) for Al-substituted Li2MnO3compounds. The Al substitution seems to occur both at Li and Mn sites, which could explain the presence of spinel phase. X-ray photoelectronmore »spectroscopy for Mn 2p orbital reveals a significant decrease in binding energy for Li1.0Al0.33MnO3 and Li0.5Al0.5MnO3 compounds. Cyclic voltammetry, charge/discharge cycles and electrochemical impedance spectroscopy were also performed. A discharge capacity of 24 mAh g-1 for Li2MnO3, 68 mAh g-1 for Li1.5Al0.17MnO3, 58 mAh g-1 for Li1.0Al0.33MnO3 and 74 mAh g-1 for Li0.5Al0.5MnO3 were obtained. Aluminum substitutions increased the formation of spinel phase which is responsible for cycling.« less

  2. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  3. Mn-Fe base and Mn-Cr-Fe base austenitic alloys

    DOE Patents [OSTI]

    Brager, Howard R. (Richland, WA); Garner, Francis A. (Richland, WA)

    1987-01-01

    Manganese-iron base and manganese-chromium-iron base austenitic alloys designed to have resistance to neutron irradiation induced swelling and low activation have the following compositions (in weight percent): 20 to 40 Mn; up to about 15 Cr; about 0.4 to about 3.0 Si; an austenite stabilizing element selected from C and N, alone or in combination with each other, and in an amount effective to substantially stabilize the austenite phase, but less than about 0.7 C, and less than about 0.3 N; up to about 2.5 V; up to about 0.1 P; up to about 0.01 B; up to about 3.0 Al; up to about 0.5 Ni; up to about 2.0 W; up to about 1.0 Ti; up to about 1.0 Ta; and with the remainder of the alloy being essentially iron.

  4. Resonant spin tunneling in randomly oriented nanospheres of Mn?? acetate

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lendinez, S.; Billinge, S. J. L.; Zarzuela, R.; Tejada, J.; Terban, M. W.; Espin, J.; Imaz, I.; Maspoch, D.; Chudnovsky, E. M.

    2015-01-06

    We report measurements and theoretical analysis of resonant spin tunneling in randomly oriented nanospheres of a molecular magnet. Amorphous nanospheres of Mn?? acetate have been fabricated and characterized by chemical, infrared, TEM, X-ray, and magnetic methods. Magnetic measurements have revealed sharp tunneling peaks in the field derivative of the magnetization that occur at the typical resonant field values for the Mn?? acetate crystal in the field parallel to the easy axis.Theoretical analysis is provided that explains these observations. We argue that resonant spin tunneling in a molecular magnet can be established in a powder sample, without the need for amore »single crystal and without aligning the easy magnetization axes of the molecules. This is confirmed by re-analyzing the old data on a powdered sample of non-oriented micron-size crystals of Mn?? acetate. Our findings can greatly simplify the selection of candidates for quantum spin tunneling among newly synthesized molecular magnets.« less

  5. HgMn Stars as apparent X-ray emitters

    E-Print Network [OSTI]

    Hubrig, S; Mathys, G

    1998-01-01

    In the ROSAT all-sky survey 11 HgMn stars were detected as soft X-ray emitters (Berghoefer, Schmitt & Cassinelli 1996). Prior to ROSAT, X-ray observations with the Einstein Observatory had suggested that stars in the spectral range B5-A7 are devoid of X-ray emission. Since there is no X-ray emitting mechanism available for these stars (also not for HgMn stars), the usual argument in the case of an X-ray detected star of this spectral type is the existence of an unseen low-mass companion which is responsible for the X-ray emission. The purpose of the present work is to use all available data for our sample of X-ray detected HgMn stars and conclude on the nature of possible companions.

  6. Resonant spin tunneling in randomly oriented nanospheres of Mn?? acetate

    SciTech Connect (OSTI)

    Lendinez, S. [Univ. de Barcelona, Barcelona, Spain (Europe); Billinge, S. J. L. [Columbia Univ., New York, NY (United States); Zarzuela, R. [Univ. de Barcelona, Barcelona, Spain (Europe); Tejada, J. [Univ. de Barcelona, Barcelona, Spain (Europe); Terban, M. W. [Columbia Univ., New York, NY (United States); Espin, J. [Univ. Autonoma Barcelona, Barcelona, Spain (Europe); Imaz, I. [Univ. Autonoma Barcelona, Barcelona, Spain (Europe); Maspoch, D. [Univ. Autonoma Barcelona, Barcelona, Spain (Europe); Chudnovsky, E. M. [City Univ. of New York, Bronx, NY (United States)

    2015-01-01

    We report measurements and theoretical analysis of resonant spin tunneling in randomly oriented nanospheres of a molecular magnet. Amorphous nanospheres of Mn?? acetate have been fabricated and characterized by chemical, infrared, TEM, X-ray, and magnetic methods. Magnetic measurements have revealed sharp tunneling peaks in the field derivative of the magnetization that occur at the typical resonant field values for the Mn?? acetate crystal in the field parallel to the easy axis.Theoretical analysis is provided that explains these observations. We argue that resonant spin tunneling in a molecular magnet can be established in a powder sample, without the need for a single crystal and without aligning the easy magnetization axes of the molecules. This is confirmed by re-analyzing the old data on a powdered sample of non-oriented micron-size crystals of Mn?? acetate. Our findings can greatly simplify the selection of candidates for quantum spin tunneling among newly synthesized molecular magnets.

  7. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  8. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  9. Assessment of the Diffusive Gradients in Thin-films (DGT) technique to assess the plant availability of Mn in soils.

    E-Print Network [OSTI]

    Mundus, Simon; Husted, Søren; Lombi, Enzo

    2009-01-01

    predicts copper availability to plants. EnvironmentalAttempts to assess Mn availability have been impeded due towill influence the Mn availability. Often flooding of soils

  10. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01

    segregation in Mn-doped Ge”, Journal of Applied Physics 101,Room-temperature ferromagnetism in Ge 1-x Mn x nanowires”,BC high-?/metal gate Ge/C alloy pMOSFETs fabricated directly

  11. Single-molecule magnets assembled from oxime stabilized Mn?III triangles

    E-Print Network [OSTI]

    Stephenson, Casey Justin

    2009-01-01

    100, 157203. Chapter Three “Double-Decker” [NX 4 ] 2 [Mn 8 (76 Chapter Three “Double-Decker” [NX 4 ] 2 [Mn 8 (salox) 6 Opacking effects in two “double decker” complexes of the

  12. Electrodeposited Al-Mn Alloys with Microcrystalline, Nanocrystalline, Amorphous and Nano-quasicrystalline Structures

    E-Print Network [OSTI]

    Ruan, Shiyun

    Al–Mn alloys with Mn content ranging from 0 to 15.8 at.% are prepared by electrodeposition from an ionic liquid at room temperature, and exhibit a remarkably broad range of structures. The alloys are characterized through ...

  13. Activation of a MnO2 cathode by water-stimulated Mg2+ insertion...

    Office of Scientific and Technical Information (OSTI)

    Activation of a MnO2 cathode by water-stimulated Mg2+ insertion for a magnesium ion battery Citation Details In-Document Search Title: Activation of a MnO2 cathode by...

  14. X-Ray Spectroscopy of the Mn(4) Ca Cluster in the Water-Oxidation...

    Office of Scientific and Technical Information (OSTI)

    X-Ray Spectroscopy of the Mn(4) Ca Cluster in the Water-Oxidation Complex of Photosystem II Citation Details In-Document Search Title: X-Ray Spectroscopy of the Mn(4) Ca Cluster in...

  15. Ba and Ni speciation in a nodule of binary Mn oxide phase composition from Lake Baikal

    E-Print Network [OSTI]

    , and absorption spectroscopy. Fe is speciated as goethite, and Mn as romanechite (psilomelane) and 10 A is separated from the other type by goethite. The binary Mn oxide banding pattern is interpreted by a two

  16. In-situ Electrical Conductivity of LixMnO2 Nanowires as a Function...

    Office of Scientific and Technical Information (OSTI)

    In-situ Electrical Conductivity of LixMnO2 Nanowires as a Function of "x" and Size Citation Details In-Document Search Title: In-situ Electrical Conductivity of LixMnO2 Nanowires...

  17. Mn12-acetate thin film patterns and their interaction with superconductors 

    E-Print Network [OSTI]

    Kim, Kyongwan

    2009-05-15

    Mn12-acetate single-molecule magnets (SMMs) are nano-scale magnets showing a strong magnetic anisotropy, slow relaxation and stepwise magnetic hysteresis curves. Possible applications of Mn12-acetate, e.g. for ultra high density magnetic information...

  18. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  19. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  20. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  1. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  2. Mixing antiferromagnets to tune NiFe-[IrMn/FeMn] interfacial spin-glasses, grains thermal stability, and related exchange bias properties

    SciTech Connect (OSTI)

    Akmaldinov, K.; Ducruet, C.; Portemont, C.; Joumard, I.; Prejbeanu, I. L.; Dieny, B.; Baltz, V.

    2014-05-07

    Spintronics devices and in particular thermally assisted magnetic random access memories require a wide range of ferromagnetic/antiferromagnetic (F/AF) exchange bias (EB) properties and subsequently of AF materials to fulfil diverse functionality requirements for the reference and storage. For the reference layer, large EB energies and high blocking temperature (T{sub B}) are required. In contrast, for the storage layer, mostly moderate T{sub B} are needed. One of the present issues is to find a storage layer with properties intermediate between those of IrMn and FeMn and in particular: (i) with a T{sub B} larger than FeMn for better stability at rest-T but lower than IrMn to reduce power consumption at write-T and (ii) with improved magnetic interfacial quality, i.e., with reduced interfacial glassy character for lower properties dispersions. To address this issue, the EB properties of F/AF based stacks were studied for various mixed [IrMn/FeMn] AFs. In addition to EB loop shifts, the F/AF magnetic interfacial qualities and the AF grains thermal stability are probed via measurements of the low- and high-temperature contributions to the T{sub B} distributions, respectively. A tuning of the above three parameters is observed when evolving from IrMn to FeMn via [IrMn/FeMn] repetitions.

  3. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    ferromagnetic Mn 5 Ge 3 for spintronic applications. Phys.dopants of interest for spintronic applications, where both

  4. Effects of the Georgia flood of `94 on Lake Blackshear Dam

    SciTech Connect (OSTI)

    Findlay, R.C.; Northrop, J.H. [Northrop, Devine & Tarbell, Inc., Portland, ME (United States); Crisp, R.L. Jr. [and others

    1995-12-31

    Tropical Storm Alberto produced record rainfall in central Georgia in early July, 1994. The area drains into Lake Blackshear, formed in the Flint River by Lake Blackshear Dam. The level of the lake rose 3.5 m (11.5 ft) above normal and caused the worst flooding of the area in recorded history. The north embankment of the dam was overtopped, causing a 215 m (700 ft) breach. Prior to the breach, a few concentrated boils were observed in the tailwater downstream of the non-breached portion of the dam. This portion remained intact through the flood, but the presence of the boils raised questions regarding its integrity. The effects of the flood on the north embankment are discussed, as well as the geotechnical investigation conducted to assess subsurface conditions at the breach and intact portions and the plan for remediation.

  5. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  6. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  7. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  8. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  9. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  10. Electrochemical Performance of LiMnPO[subscript 4] Synthesized with Off-Stoichiometry

    E-Print Network [OSTI]

    Kang, Byoungwoo

    LiMnPO[subscript 4] was synthesized from an off-stoichiometric mix of starting materials with nominal composition LiMn[subscript 0.9]P[subscript 0.95]O[subscript 4??]. Stoichiometric LiMnPO[subscript 4] with particle size ...

  11. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  12. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  13. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  14. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  15. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  16. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  17. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  18. Cationic disorder and Mn{sup 3+}/Mn{sup 4+} charge ordering in the B? and B? sites of Ca{sub 3}Mn{sub 2}NbO{sub 9} perovskite: a comparison with Ca{sub 3}Mn{sub 2}WO{sub 9}

    SciTech Connect (OSTI)

    López, C.A.; Saleta, M.E.; Pedregosa, J.C.; Sánchez, R.D.; Alonso, J.A.; and others

    2014-02-15

    We describe the preparation, crystal structure determination, magnetic and transport properties of two novel Mn-containing perovskites, with a different electronic configuration for Mn atoms located in B site. Ca{sub 3}Mn{sup 3+}{sub 2}WO{sub 9} and Ca{sub 3}Mn{sup 3+/4+}{sub 2}NbO{sub 9} were synthesized by standard ceramic procedures; the crystallographic structure was studied from X-ray powder diffraction (XRPD) and neutron powder diffraction (NPD). Both phases exhibit a monoclinic symmetry (S.G.: P2{sub 1}/n); Ca{sub 3}Mn{sub 2}WO{sub 9} presents a long-range ordering over the B sites, whereas Ca{sub 3}Mn{sub 2}NbO{sub 9} is strongly disordered. By “in-situ” NPD, the temperature evolution of the structure study presents an interesting evolution in the octahedral size (?Mn–O?) for Ca{sub 3}Mn{sub 2}NbO{sub 9}, driven by a charge ordering effect between Mn{sup 3+} and Mn{sup 4+} atoms, related to the anomaly observed in the transport measurements at T?160 K. Both materials present a magnetic order below T{sub C}=30 K and 40 K for W and Nb materials, respectively. The magneto-transport measurements display non-negligible magnetoresistance properties in the paramagnetic regime. - Graphical abstract: Comparison between the octahedron size and the magnetic behaviour for Ca{sub 3}Mn{sub 2}NbO{sub 9} in the temperature region where the charge and magnetic order occur. Display Omitted - Highlights: • Two novel Mn-containing double perovskites were obtained by solid-state reactions. • Both double perovskites are monoclinic (P2{sub 1}/n) determined by XRPD and NPD. • Ca{sub 3}Mn{sub 2}WO{sub 9} contains Mn{sup 3+} while Ca{sub 3}Mn{sub 2}NbO{sub 9} includes mixed-valence cations Mn{sup 3+}/Mn{sup 4+}. • Ca{sub 3}Mn{sub 2}NbO{sub 9} presents a charge-ordering effect between Mn{sup 3+} and Mn{sup 4+} evidenced by NPD. • The magnetic and transport studies evidenced the charge ordering in Ca{sub 3}Mn{sub 2}NbO{sub 9}.

  19. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  20. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  1. Growing the renewable chemicals and advanced biofuels cluster in MN

    E-Print Network [OSTI]

    Levinson, David M.

    Growing the renewable chemicals and advanced biofuels cluster in MN #12;Renewable Chemical Value% Reduction 60% Reduction 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% Gasoline Corn Ethanol Advanced Biofuel Cellulosic Biofuel Corn Ethanol 20% GHG Reduction Compared to gasoline: Advanced Biofuel 50% GHG Reduction e

  2. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  3. An Experimental Study of Mn12-Family Molecular Magnets in Isolation with High Spatial Resolution 

    E-Print Network [OSTI]

    Reaves, Kelley Thomas

    2014-12-17

    atoms. The radius of the Mn atoms has been modified from their ionic radius for clarity. . . . . . . . . . . . . 15 2.4 Magnetization of Mn12-Ph powder sample as a function of applied magnetic field at different temperatures, 1.8K ? T ? 10K. The measured... large circles are Mn3+ ions, the lighter colored large circles are Mn4+ ions, the smaller black circles are O atoms, and the lines indicate a chemical bond (of O to Mn). This double shell has tetragonal symmetry and consists of an inner shell...

  4. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  5. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  6. Effect of Mn substitution on the transport properties of co-sputtered Fe{sub 3?x}Mn{sub x}Si epilayers

    SciTech Connect (OSTI)

    Tang, M.; Jin, C.; Bai, H. L.

    2014-11-07

    Motivated by the theoretical calculations that Fe{sub 3?x}Mn{sub x}Si can simultaneously exhibit a high spin polarization with a high Curie temperature to be applied in spintronic devices, and in order to further study the effect of Mn contents on the physical properties of Fe{sub 3?x}Mn{sub x}Si, we have investigated the effect of Mn substitution on the transport properties of epitaxial Fe{sub 3?x}Mn{sub x}Si (0?x?1) films systematically. The Fe{sub 3?x}Mn{sub x}Si films were epitaxially grown on MgO(001) plane with 45° rotation. The magnetization for various x shows enhanced irreversibility, implying the antiferromagnetic ordering induced by the substitution of Mn. A metal-semiconductor crossover was observed due to the enhanced disorders of interactions and the local lowering of symmetry induced by the substitution of Mn. The single-domain state in the Fe{sub 3?x}Mn{sub x}Si films leads to twofold symmetric curves of the anisotropic magnetoresistance and planar Hall resistivity.

  7. Role of t{sub 2g} electrons in Mn-Tb coupling of multiferroic TbMnO{sub 3}

    SciTech Connect (OSTI)

    Guo, Y. Y.; Wang, Y. L.; Liu, J.-M.; Wei, T.

    2014-08-14

    We investigate the effect of Cr-doping in polycrystalline TbMn{sub 1?x}Cr{sub x}O{sub 3} (x???6%) ceramics on the magnetism, ferroelectricity, and dielectricity. The Cr substitution gradually suppresses the ferroelectricity induced by the Mn spiral spin ordering, and results in a stronger modulation of polarization by magnetic field with increasing x. However, the transition temperature T{sub Tb} corresponding to onset of Tb magnetic ordering has barely shifted with Cr doping. In other words, although the Cr-doping obviously disrupts the Mn spiral spin ordering, the exchange field J{sub Mn-Tb} acting on the Tb moments from the Mn-spin structure is hardly impacted. Our work demonstrates that the e{sub g} electron of Mn{sup 3+} plays an important role in forming the Mn spiral spin order, but the f-d exchange interaction between the Mn 3d spins and the Tb 4f moments in multiferroic TbMnO{sub 3} almost involves only the t{sub 2g} electrons.

  8. Biological Mn(II) oxidation in freshwater and marine systems : new perspectives on reactants, mechanisms and microbial catalysts of Mn cycling in the environment

    E-Print Network [OSTI]

    Clement, Brian Gregory

    2006-01-01

    a mining-related acid drainage problem. Applied Geochemistrya mining-related acid drainage problem. Applied GeochemistryBioremediation of Acid Mine Drainage: Mn(II) Oxidation at

  9. Electronic structure and magnetism of Mn{sub 12}O{sub 12} clusters

    SciTech Connect (OSTI)

    Pederson, M.R. [Complex Systems Theory Branch-6692, Naval Research Laboratory, Washington, D.C. 20375-5000 (United States)] [Complex Systems Theory Branch-6692, Naval Research Laboratory, Washington, D.C. 20375-5000 (United States); Khanna, S.N. [Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284-2000 (United States)] [Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284-2000 (United States)

    1999-01-01

    To address the ferrimagnetic state of the Mn{sub 12} acetate matrix [Mn{sub 12}O{sub 12}(CH{sub 3}COO){sub 16}(H{sub 2}O){sub 4}] we have performed all-electron gradient-corrected density-functional calculations on (MnO){sub n} with n=1, 2, 4, and 12. In contrast to bulk MnO which is antiferromagnetic, the small (MnO){sub n} (n=1, 2, and 4) clusters are ferromagnetic with Mn moments of 5.0{mu}{sub B} but the ground state of Mn{sub 12}O{sub 12} is ferrimagnetic with a total magnetic moment of 20.0{mu}{sub B} as observed experimentally. The inner Mn sites in Mn{sub 12}O{sub 12} are found to have localized moments of 4.1{mu}{sub B} which are antiferromagnetically coupled to two types of outer Mn with moments of 4.2{mu}{sub B}. The cluster is shown to be marked by ionic as well as covalent bonds between Mn d and O p electrons and a strong intracluster magnetic coupling. {copyright} {ital 1999} {ital The American Physical Society}

  10. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  11. Giant Magnetic Moments and Magnetic Bistability of Stoichiomatric MnO Clusters

    SciTech Connect (OSTI)

    Nayak, S.K.; Jena, P. [Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284-2000 (United States)] [Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284-2000 (United States)

    1998-10-01

    {ital Abthinspthinspinitio} calculations based on density functional theory and generalized gradient approximation reveal many unusual features of stoichiometric (MnO){sub x} (x{le}9) clusters that contrast with their bulk behavior. The clusters are ferromagnetic and carry atomiclike magnetic moments ranging from 4{mu}{sub B} to 5{mu}{sub B} per MnO unit, and the moments are localized at the Mn sites. The (MnO){sub 8} cluster, in particular, exhibits nearly degenerate ferromagnetic and atypical antiferromagnetic solutions with the ferromagnetic structure carrying a moment of 40{mu}{sub B} . The structures of (MnO){sub x} clusters are also unique with cubic and hexagonal forms competing for stability. (MnO){sub 2} and (MnO){sub 3} are unusually stable and form the foundation for further growth. {copyright} {ital 1998} {ital The American Physical Society}

  12. X-ray absorption study of the electronic structure of Mn-doped amorphous Si

    SciTech Connect (OSTI)

    Arenholz, Elke; Zeng, Li; Huegel, A.; Helgren, E.; Hellman, F.; Piamonteze, C.; Arenholz, E.

    2008-03-08

    The electronic structure of Mn in amorphous Si (a-Mn{sub x}Si{sub 1?x}) is studied by X-ray absorption spectroscopy at the Mn L{sub 3,2} edges for x = 0.005-0.18. Except the x = 0.005 sample, which shows a slight signature of Mn{sup 2+} atomic multiplets associated with a local Mn moment, all samples have broad and featureless L{sub 3,2} absorption peaks, corresponding to an itinerant state for all 3d electrons. The broad X-ray absorption spectra exclude the possibility of a localized 3d moment and explain the unexpectedly quenched Mn moment in this magnetically-doped amorphous semiconductor. Such a fully delocalized d state of Mn dopant in Si has not been previously suggested.

  13. Atomic-resolution study of Mn tetramer clusters using scanning tunneling Rong Yang, Haiqiang Yang, and Arthur R. Smitha

    E-Print Network [OSTI]

    Atomic-resolution study of Mn tetramer clusters using scanning tunneling microscopy Rong Yang clusters is investigated. The clusters are composed of a quadrant array of Mn atoms forming a tetramer of manganese nitride, on which are stabilized peri- odic, self-organized array of MnN-bonded Mn tetramer clus

  14. Georgia-Pacific Palatka Plant Uses Thermal Pinch Analysis and Evaluates Water Reduction in Plant-Wide Energy Assessment

    SciTech Connect (OSTI)

    2002-12-01

    This OIT BestPractices Case Study describes the methods and results used in a plant-wide assessment at a Georgia-Pacific paper mill in Palatka, FL. Assessment personnel recommended several projects, which, if implemented, have the potential to save the plant more than 729,000 MMBtu per year and $2.9 million per year. In addition, the plant could reduce water use by 2,100 gallons per minute.

  15. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  16. Plutonium Oxidation and Subsequent Reduction by Mn (IV) Minerals

    SciTech Connect (OSTI)

    KAPLAN, DANIEL

    2005-09-13

    Plutonium sorbed to rock tuff was preferentially associated with manganese oxides. On tuff and synthetic pyrolusite (Mn{sup IV}O{sub 2}), Pu(IV) or Pu(V) was initially oxidized, but over time Pu(IV) became the predominant oxidation state of sorbed Pu. Reduction of Pu(V/VI), even on non-oxidizing surfaces, is proposed to result from a lower Gibbs free energy of the hydrolyzed Pu(IV) surface species versus that of the Pu(V) or Pu(VI) surface species. This work suggests that despite initial oxidation of sorbed Pu by oxidizing surfaces to more soluble forms, the less mobile form of Pu, Pu(IV), will dominate Pu solid phase speciation during long term geologic storage. The safe design of a radioactive waste or spent nuclear fuel geologic repository requires a risk assessment of radionuclides that may potentially be released into the surrounding environment. Geochemical knowledge of the radionuclide and the surrounding environment is required for predicting subsurface fate and transport. Although difficult even in simple systems, this task grows increasingly complicated for constituents, like Pu, that exhibit complex environmental chemistries. The environmental behavior of Pu can be influenced by complexation, precipitation, adsorption, colloid formation, and oxidation/reduction (redox) reactions (1-3). To predict the environmental mobility of Pu, the most important of these factors is Pu oxidation state. This is because Pu(IV) is generally 2 to 3 orders of magnitude less mobile than Pu(V) in most environments (4). Further complicating matters, Pu commonly exists simultaneously in several oxidation states (5, 6). Choppin (7) reported Pu may exist as Pu(IV), Pu(V), or Pu(VI) oxic natural groundwaters. It is generally accepted that plutonium associated with suspended particulate matter is predominantly Pu(IV) (8-10), whereas Pu in the aqueous phase is predominantly Pu(V) (2, 11-13). The influence of the character of Mn-containing minerals expected to be found in subsurface repository environments on Pu oxidation state distributions has been the subject of much recent research. Kenney-Kennicutt and Morse (14), Duff et al. (15), and Morgenstern and Choppin (16) observed oxidation of Pu facilitated by Mn(IV)-bearing minerals. Conversely, Shaughnessy et al. (17) used X-ray Absorption near-edge spectroscopy (XANES) to show reduction of Pu(VI) by hausmannite (Mn{sup II}Mn{sub 2}{sup III}O{sub 4}) and manganite ({gamma}-Mn{sup III}OOH) and Kersting et al., (18) observed reduction of Pu(VI) by pyrolusite (Mn{sup IV}O{sub 2}). In this paper, we attempt to reconcile the apparently conflicting datasets by showing that Mn-bearing minerals can indeed oxidize Pu, however, if the oxidized species remains on the solid phase, the oxidation step competes with the formation of Pu(IV) that becomes the predominant solid phase Pu species with time. The experimental approach we took was to conduct longer term (approximately two years later) oxidation state analyses on the Pu sorbed to Yucca Mountain tuff (initial analysis reported by Duff et al., (15)) and measure the time-dependant changes in the oxidation state distribution of Pu in the presence of the Mn mineral pyrolusite.

  17. Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism

    SciTech Connect (OSTI)

    Stone, P.R.; Alberi, K.; Tardif, S.K.Z.; Beeman, J.W.; Yu, K.M.; Walukiewicz, W.; Dubon, O.D.

    2008-02-07

    We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4percent of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4 percent As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature TC from 113 K to 60 K (100 K to 65 K) upon the introduction of 3.1 percent P (1percent N) into the As sublattice.

  18. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  19. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  20. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  1. Inkjet-printed RF Energy Harvesting and Wireless Power Trasmission Devices on Paper Substrate

    E-Print Network [OSTI]

    Tentzeris, Manos

    of Electrical and Computer Engineeing, Georgia Institute of Technology, GA, USA Centre Tecnologic de

  2. Upscaling fluxes from tower to landscape: Overlaying flux footprints on high-resolution (IKONOS) images of vegetation cover

    E-Print Network [OSTI]

    Guo, Qinghua

    Laboratory for Environmental Physics, University of Georgia, Griffin, GA 30223-1797, USA d Department

  3. Redefinition and Global Estimation of Basal Ecosystem1 Respiration Rate2

    E-Print Network [OSTI]

    Leclerc, Monique Y.

    Sciences,52 University of Georgia, Griffin, GA 30223, USA53 26 Geobiosphere Science Centre, Physical

  4. Estimating nocturnal ecosystem respiration from the vertical turbulent flux and change in storage of CO2

    E-Print Network [OSTI]

    Chen, Jiquan

    of Georgia, Lab Environmental Physics, Griffin, GA, USA w Department of Physics, University of Helsinki

  5. Biogeosciences, 7, 36253636, 2010 www.biogeosciences.net/7/3625/2010/

    E-Print Network [OSTI]

    Leclerc, Monique Y.

    Laboratory for Environmental Physics, The University of Georgia, 1109 Experiment Street, Griffin, GA 30223

  6. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  7. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  8. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  9. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  10. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  11. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  12. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  13. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  14. Manganese valence and coordination structure in Mn,Mg-codoped {gamma}-AlON green phosphor

    SciTech Connect (OSTI)

    Takeda, Takashi; Xie, Rong-Jun; Hirosaki, Naoto; Matsushita, Yoshitaka; Honma, Tetuso

    2012-10-15

    The valence and coordination structure of manganese in a Mn,Mg-codoped {gamma}-AlON spinel-type oxynitride green phosphor were studied by synchrotron X-ray diffraction and absorption fine structure measurements. The absorption edge position of the XANES revealed the bivalency of Mn. Two cation sites are available in the spinel structure for cation doping: a tetrahedral site and an octahedral site. The pre-edge of the XANES and the distance to the nearest neighbor atoms obtained from the EXAFS measurement showed that Mn was situated at the tetrahedral site. Rietveld analysis showed that the vacancy occupied the octahedral site. The preferential occupation of the tetrahedral site by Mn and the roles of N and Mg are discussed in relation to the spinel crystal structure. - Graphical Abstract: Fourier transform of EXAFS of Mn K-edge for Mn,Mg-codoped green phosphor and Mn coordination structure. Highlights: Black-Right-Pointing-Pointer Mn, Mg-codoped {gamma}-AlON green phosphor for white LED. Black-Right-Pointing-Pointer The valence of Mn is divalent. Black-Right-Pointing-Pointer Mn occupies the tetrahedral site in the spinel structure.

  15. Ferromagnetic interactions and martensitic transformation in Fe doped Ni-Mn-In shape memory alloys

    SciTech Connect (OSTI)

    Lobo, D. N.; Priolkar, K. R.; Emura, S.; Nigam, A. K.

    2014-11-14

    The structure, magnetic, and martensitic properties of Fe doped Ni-Mn-In magnetic shape memory alloys have been studied by differential scanning calorimetry, magnetization, resistivity, X-ray diffraction (XRD), and EXAFS. While Ni{sub 2}MnIn{sub 1?x}Fe{sub x} (0???x???0.6) alloys are ferromagnetic and non martensitic, the martensitic transformation temperature in Ni{sub 2}Mn{sub 1.5}In{sub 1?y}Fe{sub y} and Ni{sub 2}Mn{sub 1.6}In{sub 1?y}Fe{sub y} increases for lower Fe concentrations (y???0.05) before decreasing sharply for higher Fe concentrations. XRD analysis reveals presence of cubic and tetragonal structural phases in Ni{sub 2}MnIn{sub 1?x}Fe{sub x} at room temperature with tetragonal phase content increasing with Fe doping. Even though the local structure around Mn and Ni in these Fe doped alloys is similar to martensitic Mn rich Ni-Mn-In alloys, presence of ferromagnetic interactions and structural disorder induced by Fe affect Mn-Ni-Mn antiferromagnetic interactions resulting in suppression of martensitic transformation in these Fe doped alloys.

  16. Effect of composition and heat treatment on MnBi magnetic materials

    SciTech Connect (OSTI)

    Cui, Jun [Pacific Northwest National Laboratory; Choi, Jung-Pyung [Pacific Northwest National Laboratory; Polikarpov, Evgueni [Pacific Northwest National Laboratory; Bowden, Mark E [Pacific Northwest National Laboratory; Xie, Wei [Pacific Northwest National Laboratory; Li, Guosheng [Pacific Northwest National Laboratory; Nie, Zimin [Pacific Northwest National Laboratory; Zarkevich, Nikolai [Ames Laboratory; Kramer, Matthew J [Ames Laboratory; Johnson, Duane [Ames Laboratory

    2014-10-01

    The metallic compound MnBi is a promising rare-earth-free permanent magnet material, unique among all candidates for its high intrinsic coercivity (Hci) and its large positive temperature coefficient. The Hci of MnBi in thin-film or powder form can exceed 12 and 26 kOe at 300 and 523 K, respectively. Such a steep rise in Hci with increasing temperature is unique to MnBi. Consequently, MnBi is a highly sought-after hard phase for exchange coupling nanocomposite magnets. However, the reaction between Mn and Bi is peritectic, and hence Mn tends to precipitate out of the MnBi liquid during the solidification process. As result, when the alloy is prepared using conventional induction or arc-melting casting methods, additional Mn is required to compensate the precipitation of Mn. In addition to composition, post-casting annealing plays an important role in obtaining a high content of MnBi low-temperature phase (LTP) because the annealing encourages the Mn precipitates and the unreacted Bi to react, forming the desired LTP phase. Here we report a systematic study of the effect of composition and heat treatments on the phase content and magnetic properties of Mn–Bi alloys. In this study, 14 compositions were prepared using conventional metallurgical methods, and the compositions, crystal structures, phase content and magnetic properties of the resulting alloys were analyzed. The results show that the composition with 55 at.% Mn exhibits both the highest LTP content (93 wt.%) and magnetization (74 emu g?1 with 9 T applied field at 300 K).

  17. On the state of Mn impurity implanted in Si

    SciTech Connect (OSTI)

    Orlov, A. F.; Bublik, V. T.; Vdovin, V. I.; Agafonov, Yu. A.; Balagurov, L. A.; Zinenko, V. I.; Kulemanov, I. V.; Shcherbachev, K. D.

    2009-07-15

    The state of manganese impurity in implanted silicon at implantation doses of up to 5 x 10{sup 16} cm{sup -2} has been investigated by X-ray diffraction and transmission electron microscopy. It is established that, after short-term vacuum annealing at 850{sup o}C, most of the implanted manganese impurities are in microinclusions up to 20 nm in size formed by a tetragonal silicide phase of the Mn{sub 15}Si{sub 26} type.

  18. Pyrococcus Furiosus Genome Supplementary Data from the Adams Laboratory at the University of Georgia

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Adams, Michael W.W.; Weinberg, Michael V.; Schut, Gerrit J.; Brehm, Scott; Datta, Susmitta; Zhou, J.

    The research in the Adams Laboratory focuses on the physiology of hyperthermophilic organisms with an emphasis on metal-containing enzymes in the hyperthermophilic marine archaeon Pyrococcus furiosus. Three of the many articles from this University of Georgia lab have supplementary materials that are available on the Adams Lab website. All three sets of data are Open Reading Frames (ORFs) used for DNA microarray experiments and the changes in signal intensities. The full citations for the three articles are: 1) Weinberg, M. V., Schut, G. J., Brehm, S., Datta, S. and Adams, M. W. W. (2005) Cold shock of a hyperthermophilic archaeon: Pyrococcus furiosus exhibits multiple responses to a suboptimal growth temperature with a key role for membrane-bound glycoproteins. J Bacteriol. 187, 336-348; 2) Schut, G. J., Brehm, S. D., Datta, S. and Adams, M. W. W. (2003) "Whole genome DNA microarray analysis of a hyperthermophile and an archaeon: Pyrococcus furiosus grown on carbohydrates or peptides" J. Bacteriol. 185, 3935-3947; Schut, G. J., Zhou, J. and Adams, M. W. W. (2001) "DNA microarray analysis of the hyperthermophilic archaeon Pyrococcus furiosus evidence for a new type of sulfur-reducing enzyme" J. Bacteriol. 183, 7027-7036. Note that these articles are copyrighted by the Journal of Bacteriology.

  19. Large exchange bias enhancement in (Pt(or Pd)/Co)/IrMn/Co trilayers with ultrathin IrMn thanks to interfacial Cu dusting

    SciTech Connect (OSTI)

    Vinai, G. [SPINTEC, UMR 8191 CEA/CNRS/UJF/Grenoble-INP, CEA/INAC, 17, rue des Martyrs, 38054 Grenoble (France); Crocus Technology, 4 Place Robert Schuman, 38054 Grenoble (France); Moritz, J. [Institut Jean Lamour, UMR 7198 CNRS - Université de Lorraine, Bd des Aiguillettes, BP 70239, F-54506 Vandoeuvre-les-Nancy Cedex (France); Bandiera, S. [Crocus Technology, 4 Place Robert Schuman, 38054 Grenoble (France); Prejbeanu, I. L.; Dieny, B. [SPINTEC, UMR 8191 CEA/CNRS/UJF/Grenoble-INP, CEA/INAC, 17, rue des Martyrs, 38054 Grenoble (France)

    2014-04-21

    The magnitude of exchange bias (H{sub ex}) at room temperature can be significantly enhanced in IrMn/Co and (Pt(or Pd)/Co)/IrMn/Co structures thanks to the insertion of an ultrathin Cu dusting layer at the IrMn/Co interface. The combination of trilayer structure and interfacial Cu dusting leads to a three-fold increase in H{sub ex} as compared to the conventional IrMn/Co bilayer structure, with an increased blocking temperature (T{sub B}) and a concave curvature of the temperature dependence H{sub ex}(T), ideal for improved Thermally Assisted-Magnetic Random Access Memory storage layer. This exchange bias enhancement is ascribed to a reduction of the spin frustration at the IrMn/Co interface thanks to interfacial Cu addition.

  20. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  1. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  2. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  3. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  4. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  5. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  6. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  7. Investigation of structure, magnetic, and transport properties of Mn-doped SiC films

    SciTech Connect (OSTI)

    Sun Xianke [School of Material Science and Engineering, Tianjin University, Tianjin 300172 (China); Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384 (China); Guo Ruisong [School of Material Science and Engineering, Tianjin University, Tianjin 300172 (China); An Yukai [Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384 (China); School of Material Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Liu Jiwen [School of Material Science and Engineering, Tianjin University, Tianjin 300172 (China); Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384 (China); School of Material Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2013-07-15

    Mn-doped SiC films were fabricated by radio frequency magnetron sputtering technique. The structure, composition, and magnetic and transport properties of the films were investigated. The results show the films have the 3C-SiC crystal structure and the doped Mn atoms in the form of Mn{sup 2+} ions substitute for C sites in SiC lattice. All the films are ferromagnetic at 300 K, and the ferromagnetism in films arises from the doped Mn atoms and some extended defects. In addition, the saturation magnetization increases with the Mn-doped concentration increasing. The Mn doping does not change the semiconductor characteristics of the SiC films.

  8. Ge{sub 1-x}Mn{sub x} heteroepitaxial quantum dots: Growth, morphology, and magnetism

    SciTech Connect (OSTI)

    Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

    2013-02-21

    Heteroepitaxial Ge{sub 1-x}Mn{sub x} quantum dots (QDs) were grown on Si (001) by molecular beam epitaxial co-deposition, with x = 0 to 0.10, in order to explore the interaction between Mn content, surface morphological evolution, and magnetism. Morphological evolution typical of the Ge/Si (001) system was observed, where the effect of Mn on surface morphology is surprisingly minimal at low Mn content, with no obvious surface morphological indicators of second phase formation. As the Mn content increases, secondary phase formation becomes evident, appearing to heterogeneously nucleate on or within Ge QDs. Still higher Mn concentrations lead to extensive second phase formation interspersed with an array of Ge QDs. Although ferromagnetism up to 220 K is observed, likely arising from intermetallic precipitates, there is no clear evidence for room-temperature ferromagnetism associated with a dilute magnetic solution phase.

  9. Time resolved magneto-optical studies of ferromagnetic InMnSb films

    SciTech Connect (OSTI)

    Frazier, M.; Kini, R. N.; Nontapot, K.; Khodaparast, G. A. [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States); Wojtowicz, T. [Institute of Physics, Polish Academy of Sciences 02-668 Warsaw (Poland); Liu, X.; Furdyna, J. K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2008-02-11

    We report time resolved magneto-optical measurements in InMnSb ferromagnetic films with 2% and 2.8% Mn contents grown by low temperature molecular beam epitaxy. In order to probe a possible interaction between the spins of photoexcited carriers and the Mn ions, we measured spin dynamics before and after aligning the Mn ions by applying an external magnetic field at temperatures above and below the samples' Curie temperatures. We observed no significant temperature or magnetic field dependence in the relaxation times and attribute the observed dynamics entirely to the relaxation of photoexcited electrons in the conduction band where the s-d coupling with the localized Mn ions is significantly weaker compared to the p-d exchange coupling. We observed several differences in the optical response of our InMnSb samples which could have been influenced mainly by the samples' growth conditions.

  10. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  11. Cr(OH)?(s) Oxidation Induced by Surface Catalyzed Mn(II) Oxidation

    SciTech Connect (OSTI)

    Namgung, Seonyi; Kwon, M.; Qafoku, Nikolla; Lee, Gie Hyeon

    2014-09-16

    This study examined the feasibility of Cr(OH)?(s) oxidation mediated by surface catalyzed Mn(II) oxidation under common groundwater pH conditions as a potential pathway of natural Cr(VI) contaminations. Dissolved Mn(II) (50 ?M) was reacted with or without synthesized Cr(OH)?(s) (1.0 g/L) at pH 7 – 9 under oxic or anoxic conditions. In the absence of Cr(OH)?(s), homogeneous Mn(II) oxidation by dissolved O? was not observed at pH ? 8.0 for 50 d. At pH 9.0, by contrast, dissolved Mn(II) was completely removed within 8 d and precipitated as hausmannite. When Cr(OH)?(s) was present, this solid was oxidized and released substantial amounts of Cr(VI) as dissolved Mn(II) was added into the suspension at pH ? 8.0 under oxic conditions. Our results suggest that Cr(OH)?(s) was readily oxidized by a newly formed Mn oxide as a result of Mn(II) oxidation catalyzed on Cr(OH)?(s) surface. XANES analysis of the residual solids after the reaction between 1.0 g/L Cr(OH)?(s) and 204 ?M Mn(II) at pH 9.0 for 22 d revealed that the product of surface catalyzed Mn(II) oxidation resembled birnessite. The rate and extent of Cr(OH)?(s) oxidation was likely controlled by those of surface catalyzed Mn(II) oxidation as the production of Cr(VI) increased with increasing pH and initial Mn(II) concentrations. This study evokes the potential environmental hazard of sparingly soluble Cr(OH)?(s) that can be a source of Cr(VI) in the presence of dissolved Mn(II).

  12. Structural and ferromagnetic properties of an orthorhombic phase of MnBi stabilized with Rh additions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Taufour, Valentin; Thimmaiah, Srinivasa; March, Stephen; Saunders, Scott; Sun, Kewei; Lamichhane, Tej Nath; Kramer, Matthew J.; Bud’ko, Sergey L.; Canfield, Paul C.

    2015-07-28

    The article addresses the possibility of alloy elements in MnBi which may modify the thermodynamic stability of the NiAs-type structure without significantly degrading the magnetic properties. The addition of small amounts of Rh and Mn provides an improvement in the thermal stability with some degradation of the magnetic properties. The small amounts of Rh and Mn additions in MnBi stabilize an orthorhombic phase whose structural and magnetic properties are closely related to the ones of the previously reported high-temperature phase of MnBi (HT MnBi). The properties of the HT MnBi, which is stable between 613 and 719 K, have notmore »been studied in detail because of its transformation to the stable low-temperature MnBi (LT MnBi), making measurements near and below its Curie temperature difficult. The Rh-stabilized MnBi with chemical formula Mn1.0625–xRhxBi [x=0.02(1)] adopts a new superstructure of the NiAs/Ni2In structure family. It is ferromagnetic below a Curie temperature of 416 K. The critical exponents of the ferromagnetic transition are not of the mean-field type but are closer to those associated with the Ising model in three dimensions. The magnetic anisotropy is uniaxial; the anisotropy energy is rather large, and it does not increase when raising the temperature, contrary to what happens in LT MnBi. The saturation magnetization is approximately 3?B/f.u. at low temperatures. Thus, while this exact composition may not be application ready, it does show that alloying is a viable route to modifying the stability of this class of rare-earth-free magnet alloys.« less

  13. Electronic Structure and Oxidation State Changes in the Mn (4) Ca Cluster of Photosystem II

    SciTech Connect (OSTI)

    Yano, J.; Pushkar, Y.; Messinger, J.; Bergmann, U.; Glatzel, P.; Yachandra, V.K.; /SLAC

    2012-08-17

    Oxygen-evolving complex (Mn{sub 4}Ca cluster) of Photosystem II cycles through five intermediate states (S{sub i}-states, i = 0-4) before a molecule of dioxygen is released. During the S-state transitions, electrons are extracted from the OEC, either from Mn or alternatively from a Mn ligand. The oxidation state of Mn is widely accepted as Mn{sub 4}(III{sub 2},IV{sub 2}) and Mn{sub 4}(III,IV{sub 3}) for S{sub 1} and S{sub 2} states, while it is still controversial for the S{sub 0} and S{sub 3} states. We used resonant inelastic X-ray scattering (RIXS) to study the electronic structure of Mn{sub 4}Ca complex in the OEC. The RIXS data yield two-dimensional plots that provide a significant advantage by obtaining both K-edge pre-edge and L-edge-like spectra (metal spin state) simultaneously. We have collected data from PSII samples in the each of the S-states and compared them with data from various inorganic Mn complexes. The spectral changes in the Mn 1s2p{sub 3/2} RIXS spectra between the S-states were compared to those of the oxides of Mn and coordination complexes. The results indicate strong covalency for the electronic configuration in the OEC, and we conclude that the electron is transferred from a strongly delocalized orbital, compared to those in Mn oxides or coordination complexes. The magnitude for the S{sub 0} to S{sub 1}, and S{sub 1} to S{sub 2} transitions is twice as large as that during the S{sub 2} to S{sub 3} transition, indicating that the electron for this transition is extracted from a highly delocalized orbital with little change in charge density at the Mn atoms.

  14. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  15. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  16. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  17. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  18. Georgia Tech Manufacturing Institute | Printed and Flexible Electronics | Page 1 A G E N D A S P E A K E R B I O G R A P H I E S

    E-Print Network [OSTI]

    Das, Suman

    Georgia Tech Manufacturing Institute | Printed and Flexible Electronics | Page 1 A G E N D A · S P Next Generation Manufacturing of Printed and Flexible Electronics #12;#12;Georgia Tech Manufacturing Institute | Printed and Flexible Electronics | Page 1 Table of Contents Agenda - Pages 3-4 Speaker

  19. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  20. Enhancing SMM properties via axial distortion of Mn-3(III) clusters 

    E-Print Network [OSTI]

    Parsons S.; Brechin, E.K.; Collins A.; Karotsis G.; Jones L.F.; Inglis R.; Wernsdorfer W.; Perlepes S.P.

    2008-01-01

    Replacement of carboxylate and solvent with facially capping tripodal ligands enhances the single-molecule magnet (SMM) properties of [Mn-3(III)] triangles.

  1. Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure

    SciTech Connect (OSTI)

    Singh, Kirandeep; Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand (India); Singh, Sushil Kumar [Functional Materials Division, Solid State Physics Lab (SSPL), DRDO, Lucknow Road, Timarpur, Delhi 110054 (India)

    2014-09-21

    The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in dielectric constant versus temperature plots around martensitic phase transformation temperature of Ni-Mn-In showed a strain mediated coupling between Ni-Mn-In and PZT layers. The ferroelectric measurement taken at different temperatures exhibits a well saturated and temperature dependent P-E loops with a highest value of P{sub sat}~55 ?C/cm² obtained during martensite-austenite transition temperature region of Ni-Mn-In. The stress induced by Ni-Mn-In layer on upper PZT film due to structural transformation from martensite to austenite resulted in temperature modulated Tunability of PZT/Ni-Mn-In heterostructure. A tunability of 42% was achieved at 290 K (structural transition region of Ni-Mn-In) in these heterostructures. I-V measurements taken at different temperatures indicated that ohmic conduction was the main conduction mechanism over a large electric field range in these heterostructures. Magnetic measurement revealed that heterostructure was ferromagnetic at room temperature with a saturation magnetization of ~123 emu/cm³. Such multiferroic heterostructures exhibits promising applications in various microelectromechanical systems.

  2. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    ferromagnetic Mn 5 Ge 3 for spintronic applications. Phys.Wolf, S. A. et al. Spintronics: a spin-based electronicsdopants of interest for spintronic applications, where both

  3. Preparation and electrochemical properties of lamellar MnO{sub 2} for supercapacitors

    SciTech Connect (OSTI)

    Yan, Jun; Wei, Tong; Cheng, Jie; Fan, Zhuangjun; Zhang, Milin

    2010-02-15

    Lamellar birnessite-type MnO{sub 2} materials were prepared by changing the pH of the initial reaction system via hydrothermal synthesis. The interlayer spacing of MnO{sub 2} with a layered structure increased gradually when the initial pH value varied from 12.43 to 2.81, while the MnO{sub 2}, composed of {alpha}-MnO{sub 2} and {gamma}-MnO{sub 2}, had a rod-like structure at pH 0.63. Electrochemical studies indicated that the specific capacitance of birnessite-type MnO{sub 2} was much higher than that of rod-like MnO{sub 2} at high discharge current densities due to the lamellar structure with fast intercalation/deintercalation of protons and high utilization of MnO{sub 2}. The initial specific capacitance of MnO{sub 2} prepared at pH 2.81 was 242.1 F g{sup -1} at 2 mA cm{sup -2} in 2 mol L{sup -1} (NH{sub 4}){sub 2}SO{sub 4} aqueous electrolyte. The capacitance increased by about 8.1% of initial capacitance after 200 cycles at a current density of 100 mA cm{sup -2}.

  4. Ga, Ca, and 3d transition element (Cr through Zn) partitioning among spinel-lherzolite phases from the Lanzo massif, Italy: Analytical results and crystal chemistry

    SciTech Connect (OSTI)

    Wogelius, R.A.; Fraser, D.G.

    1994-06-01

    Ultramafic rocks exposed in Lanzo massif, Italy is a record of mantle geochemistry, melting, sub-solidus re-equilibration. Plagioclase(+ spinel)-lherzolite samples were analyzed by Scanning Proton Microscopy, other techniques. Previous work postulated partial melting events and a two-stage sub-solidus cooling history; this paper notes Ga enrichment on spinel-clinopyroxene grain boundaries, high Ga and transition element content of spinel, and pyroxene zonation in Ca and Al. Trace element levels in olivine and orthopyroxene are also presented. Zoning trends are interpreted as due to diffusion during cooling. Olivine-clinopyroxene Cr and Ca exchange as well as clinopyroxene and spinel zonation trends indicate that the massif experienced at least two sub-solidus cooling episodes, one at 20 kbar to 1000 C and one at 8 kbar <750C. Ga levels in cores of Lanzo high-Cr spinels are high (82-66 ppM) relative to other mantle spinels (66-40 ppM), indicating enrichment. Ga content of ultramafic spinels apparently increases with Cr content; this may be due to: increased Ga solubility stemming from crystal chemical effects and/or higher Ga activities in associated silicate melts. Thus, during melting, high-Cr residual spinel may tend to buffer solid-phase Ga level. These spinels are not only rich in Ga and Cr (max 26.37 el. wt %), but also in Fe (max 21.07 el. wt %), Mn (max 3400 ppM), and Zn (max 2430 ppM). These enrichments are again due to melt extraction and partitioning into spinel structure. Low Ni (min 1050 ppM) levels are due to unsuccessful competition of Ni with Cr for octahedral structural sites caused by crystal field. Comparisons of change in partitioning vs Cr content among several 3d transition elements for spinels from Lanzo, other localities allow us to separate crystal field effects from bulk chemical effects and to show that in typical assemblages, inversion of olivine-spinel partition coefficient for Ni from <1 to >1 should occur at 11% el. wt. Cr in spinel.

  5. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  6. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  7. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  8. Structural Model of the Basement in the Central Savannah River Area, South Carolina and Georgia

    SciTech Connect (OSTI)

    Stephenson, D. [Westinghouse Savannah River Company, AIKEN, SC (United States); Stieve, A.

    1992-03-01

    Interpretation of several generations of seismic reflection data and potential field data suggests the presence of several crustal blocks within the basement beneath the Coastal Plain in the Central Savannah River Area (CSRA). The seismic reflection and refraction data include a grid of profiles that capture shallow and deep reflection events and traverse the Savannah River Site and vicinity. Potential field data includes aeromagnetic, ground magnetic surveys, reconnaissance and detailed gravity surveys. Subsurface data from recovered core are used to constrain the model.Interpretation of these data characteristically indicate a southeast dipping basement surface with some minor highs and lows suggesting an erosional pre-Cretaceous unconformity. This surface is interrupted by several basement faults, most of which offset only early Cretaceous sedimentary horizons overlying the erosional surface. The oldest fault is perhaps late Paleozoic because it is truncated at the basement/Coastal Plain interface. This fault is related in timing and mechanism to the underlying Augusta fault. The youngest faults deform Coastal Plain sediments of at least Priabonian age (40-36.6 Ma). One of these young faults is the Pen Branch faults, identified as the southeast dipping master fault for the Triassic Dunbarton basin. All the Cenozoic faults are probably related in time and mechanism to the nearby, well studied Belair fault.The study area thus contains a set of structures evolved from the Alleghanian orogeny through Mesozoic extension to Cenozoic readjustment of the crust. There is a metamorphosed crystalline terrane with several reflector/fault packages, a reactivated Triassic basin, a mafic terrane separating the Dunbarton basin from the large South Georgia basin to the southeast, and an overprint of reverse faults, some reactivated, and some newly formed.

  9. Economic Benefits, Carbon Dioxide (CO2) Emissions Reduction, and Water Conservation Benefits from 1,000 Megawatts (MW) of New Wind Power in Georgia (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2008-06-01

    The U.S. Department of Energy's Wind Powering America Program is committed to educating state-level policy makers and other stakeholders about the economic, CO2 emissions, and water conservation impacts of wind power. This analysis highlights the expected impacts of 1000 MW of wind power in Georgia. We forecast the cumulative economic benefits from 1000 MW of development in Georgia to be $2.1 billion, annual CO2 reductions are estimated at 3.0 million tons, and annual water savings are 1,628 million gallons.

  10. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  11. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  12. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  13. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  14. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  15. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  16. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  17. Opti-MN Impact House Presentation | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuelsof EnergyApril 2014DepartmentCouncilOffice of theOpen DataHeat &Opti-MN

  18. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  19. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  20. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.