Sample records for ga georgia mn

  1. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01T23:59:59.000Z

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  2. Evidence of N substitution by Mn in GaN

    E-Print Network [OSTI]

    Pereira, LMC; Decoster, S; Correia, JG; da Silva, MR; Vantomme, A; Araújo, JP

    2012-01-01T23:59:59.000Z

    We report on the lattice location of Mn in wurtzite GaN using beta? emission channeling. In addition to the majority substituting for Ga, we locate up to 20% of the Mn atoms in N sites. We propose that the incorporation of Mn in N sites is enabled under sufficiently high concentrations of N vacancies, and stabilized by a highly charged state of the Mn cations. Since N substitution by Mn impurities in wurtzite GaN has never been observed experimentally or even considered theoretically before, it challenges the current paradigm of transition metal incorporation in wide-gap dilute magnetic semiconductors.

  3. Polarized x-ray spectroscopy of quaternary ferromagnetic semiconductor (Ga,Mn)(As,P)

    E-Print Network [OSTI]

    Wadley, P.

    2011-01-01T23:59:59.000Z

    quaternary diluted magnetic semiconductor (Ga,Mn)(As,P) as aIn diluted magnetic semiconductors such as (Ga,Mn)As, whichquaternary diluted magnetic semiconductors such as (Ga,Mn)(

  4. Effect of Mn Concentration on the Structural, optical and Magnetic Properties of GaMnN

    SciTech Connect (OSTI)

    Thaler, G.; Frazier, R.; Gila, B.; Stapleton, J.; Davidson, M.; Abernathy, C.R.; Pearton, S.J.; Segre, C.U. (IIT); (Florida)

    2010-11-16T23:59:59.000Z

    The room temperature magnetization of GaMnN films grown by molecular beam epitaxy on (0001) sapphire substrates with Mn concentrations varying from 0 to 9 at. % was found to depend on Mn concentration, with a maximum magnetization found at -3 at. % Mn. High-resolution x-ray diffraction measurements show that the c-plane lattice constant initially decreases with increasing Mn concentration, then increases when the Mn content increases above -3 at. %. This increase is accompanied by a decrease in the full width at half maximum of the rocking curves. Extended x-ray absorption fine structure results indicate that the nonsubstitutional Mn is not present in the form of Ga{sub x}Mn{sub y} clusters and thus is most likely present in the form of an interstitial. Optical absorption measurements show only a slight increase in the band gap for material with 3 at. % Mn, relative to undoped GaN.

  5. Theory of weak localization in ferromagnetic (Ga,Mn)As

    E-Print Network [OSTI]

    Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

    2009-01-01T23:59:59.000Z

    We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

  6. Transverse acoustic actuation of Ni-Mn-Ga single crystals

    E-Print Network [OSTI]

    Simon, Jesse Matthew

    2007-01-01T23:59:59.000Z

    Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

  7. Electron Band Structure of MnGaN Dimiter Alexandrov1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    to this orbital to be occupied. LCAO electron band structure of wurtzite MnxGa1-xN for points c1 and v15 ( = 1 of the wurtzite MnxGa1-xN are determined as well. INTRODUCTION The MnxGa1-xN semiconductor alloy is important model the MnGaN alloy on Mn content. Segregated Mn species in wurtzite GaN containing Mn

  8. Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer

    SciTech Connect (OSTI)

    Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

    2014-04-07T23:59:59.000Z

    We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

  9. Low-temperature magnetization of (Ga,Mn) As semiconductors

    E-Print Network [OSTI]

    Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

    2006-01-01T23:59:59.000Z

    temperature magnetometry and XMCD experiments. A series of #1;Ga,Mn#2;As films with Mn content varying between 1.7?6.7 % in the SQUID experiments and between 2.2 and 8.4 % in the XMCD experiments were grown by low-temperature molecular beam epitaxy #1;MBE.... Magnetometry The magnetic moment of the samples is measured in a SQUID magnetometer, at 5 K and under a 0.3 T external magnetic field. The external field is necessary to overcome in-plane anisotropy fields, so that the magnetization is aligned...

  10. Bending properties of epoxy resin matrix composites filled with NiMnGa ferromagnetic shape memory alloy powders

    E-Print Network [OSTI]

    Zheng, Yufeng

    Bending properties of epoxy resin matrix composites filled with Ni­Mn­Ga ferromagnetic shape memory­Mn­Ga Composite materials Mechanical properties Microstructure Two types of epoxy resin matrix composites filled­Mn­Ga epoxy resin composites were reported, yet the bending property of Ni­Mn­Ga-polymer smart composites has

  11. Doping-level-dependent optical properties of GaN:Mn O. Gelhausen,a)

    E-Print Network [OSTI]

    Nabben, Reinhard

    for system response. The optical absorption spectra recorded at 2 K of nomi- nally undoped GaN, GaN:Mn, and GaN:Mn:Si are presented in Fig. 1. An absorption band with a zero phonon line ZPL at 1.414 0.002 eDoping-level-dependent optical properties of GaN:Mn O. Gelhausen,a) E. Malguth, and M. R. Phillips

  12. Single-Crystalline Diluted Magnetic Semiconductor GaN:Mn Nanowires**

    E-Print Network [OSTI]

    Yang, Peidong

    Single-Crystalline Diluted Magnetic Semiconductor GaN:Mn Nanowires** By Heon-Jin Choi*, Han-mediated ferromagnetism. These ferromagnetic GaN:Mn nanowires represent an important class of nanometer-scale building blocks for spintronics. Theoretical studies indicate that transition-metal-doped GaN possesses

  13. Optical Properties of Mn-doped GaN O. Gelhausen1

    E-Print Network [OSTI]

    Nabben, Reinhard

    measurements. In the GaN:Mn, an intense absorption peak at 1.414 +/- 0.002 eV was observed. This peakOptical Properties of Mn-doped GaN O. Gelhausen1 , E. Malguth1,3 , M. R. Phillips1 , E. M. Goldys2, Germany ABSTRACT Molecular beam epitaxy-grown GaN with different Mn concentrations (5-23 x 1019 cm-3

  14. Synthesis and Characterization of NiMnGa Ferromagnetic Shape Memory Alloy Thin Films

    E-Print Network [OSTI]

    Jetta, Nishitha

    2011-10-21T23:59:59.000Z

    for fabricating NiMnGa thin films with desired composition and microstructure and hence unique properties for future MEMS actuator materials and characterize their properties to aid better understanding of their behavior. In this project NiMnGa thin films have...

  15. Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

    SciTech Connect (OSTI)

    Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W., E-mail: lwtu@faculty.nsysu.edu.tw [Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Huang, H. C.; Ho, N. J. [Department of Materials and Optoelectronic Science and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)

    2014-02-10T23:59:59.000Z

    One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis.

  16. Mixing Rocksalt and Wurtzite Structure Binary Nitrides to Form Novel Ternary Alloys: ScGaN and MnGaN

    E-Print Network [OSTI]

    Mixing Rocksalt and Wurtzite Structure Binary Nitrides to Form Novel Ternary Alloys: ScGaN and Mn wurtzite structure and tetrahedral bonding, both MnN and ScN are face-centered tetragonal (fct [11]. Though challenging, growth of wurtzite MnGaN alloy by molecular beam epitaxy using radio

  17. Growth of GaMnAs under near-stoichiometric conditions

    SciTech Connect (OSTI)

    Avrutin, V.; Humienik, D.; Frank, S.; Koeder, A.; Schoch, W.; Limmer, W.; Sauer, R.; Waag, A. [Abteilung Halbleiterphysik, Universitaet Ulm, D-89069 Ulm (Germany); Institut fuer Halbleitertechnik, Technische Universitaet (TU) Braunschweig, Hans-Sommer-Strasse 66, D38103 Braunschweig (Germany)

    2005-07-15T23:59:59.000Z

    We studied the effect of the V/III flux ratio and substrate temperature on magnetotransport properties and lattice parameters of Ga{sub 0.96}Mn{sub 0.04}As grown by molecular-beam epitaxy. For all the substrate temperatures, the conductivities and Curie temperatures of the layers were found to increase as the V/III flux ratio approaches 1. A Curie temperature as high as 95 K was achieved for the Ga{sub 0.96}Mn{sub 0.04}As samples grown at 240 deg. C and a V/III ratio of about 1.5. The lattice parameter of Ga{sub 0.96}Mn{sub 0.04}As increased with decreasing V/III ratio and/or increasing growth temperature. Possible reasons for the effect of the V/III ratio on the magnetotransport properties and lattice parameter of GaMnAs are discussed.

  18. Understanding and development of combined acoustic and magnetic actuation of Ni?MnGa single crystals

    E-Print Network [OSTI]

    Techapiesancharoenkij, Ratchatee, 1979-

    2007-01-01T23:59:59.000Z

    Ni-Mn-Ga based ferromagnetic shape memory alloys (FSMAs) have emerged as a promising new class of active materials capable of producing a large (several %) magnetic-field-induced strain (MFIS). FSMAs still have several ...

  19. Frequency Response of Acoustic-Assisted Ni–Mn–Ga Ferromagnetic- Shape-Memory-Alloy Actuator

    E-Print Network [OSTI]

    Techapiesancharoenkij, Ratchatee

    A prototype of Ni–Mn–Ga based ferromagnetic-shape-memory-alloy (FSMA) actuator was designed and built; an acoustic-assist technique was applied to the actuator to enhance its performance. A piezoelectric stack actuator was ...

  20. Modeling and Characterization of the Magnetocaloric Effect in Ni2MnGa Materials

    SciTech Connect (OSTI)

    Nicholson, Don M [ORNL; Odbadrakh, Khorgolkhuu [ORNL; Rios, Orlando [ORNL; Hodges, Jason P [ORNL; Ludtka, Gerard Michael [ORNL; Porter, Wallace D [ORNL; Sefat, A. S. [Oak Ridge National Laboratory (ORNL); Rusanu, Aurelian [ORNL; Evans III, Boyd Mccutchen [ORNL

    2012-01-01T23:59:59.000Z

    Magnetic shape memory alloys have great promise as magneto-caloric effect refrigerant materials due to their combined magnetic and structural transitions. Computational and experimental research is reported on the Ni2MnGa material system. The magnetic states of this system have been explored using the Wang-Landau statistical approach in conjunction with the Locally Self-consistent Multiple-Scattering (LSMS) method to explore the magnetic states responsible for the magnet-caloric effect in this material. The effects of alloying agents on the transition temperatures of the Ni2MnGa alloy were investigated using differential scanning calorimetry (DSC) and superconducting quantum interference device (SQUID). Neutron scattering experiments were performed to observe the structural and magnetic phase transformations at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory (ORNL) on alloys of Ni-Mn-Ga and Ni-Mn-Ga-Cu-Fe. Data from the observations are discussed in comparison with the computational studies.

  1. Effect of MnAs/GaAs(001) film accommodations on the phase-transition temperature

    SciTech Connect (OSTI)

    Iikawa, F.; Brasil, M.J.S.P.; Couto, O.D.D.; Adriano, C.; Giles, C.; Daeweritz, L. [Instituto de Fisica 'Gleb Wataghin', UNICAMP, Campinas-SP, C.P. 6165, 13083-970 (Brazil); Instituto de Fisica 'Gleb Wataghin', UNICAMP, Campinas-SP, C.P. 6165, 13083-970, Brazil and Laboratorio Nacional de Luz Sincrotron, CP-6192, 13084-971 Campinas-SP (Brazil); Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2004-09-20T23:59:59.000Z

    The phase-transition temperature of MnAs epitaxial films grown by molecular-beam epitaxy on GaAs(001) with different crystalline accommodations was studied by specular and grazing incidence x-ray diffraction. The transition temperature of MnAs films with tilted hexagonal c-axis orientations with respect to the GaAs substrate is higher than the most investigated nontilted films and reaches a value above room temperature, which is more suitable for device applications.

  2. Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors

    E-Print Network [OSTI]

    Owen, Man Hon Samuel

    2010-11-16T23:59:59.000Z

    -effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by decreasing the effective channel...

  3. Neutron diffraction study of MnNiGa{sub 2}—Structural and magnetic behaviour

    SciTech Connect (OSTI)

    Wang, J. L., E-mail: jianli@uow.edu.au [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Bragg Institute, ANSTO, Lucas Heights, NSW 2234 (Australia); School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, Canberra, ACT 2600 (Australia); Ma, L.; Wu, G. H. [Institute of Physics, Chinese Academy of Science, Beijing 100190 (China); Hofmann, M. [FRM-II, Technische Universität München, 85747 Garching (Germany); Avdeev, M.; Kennedy, S. J. [Bragg Institute, ANSTO, Lucas Heights, NSW 2234 (Australia); Campbell, S. J. [School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, Canberra, ACT 2600 (Australia); Md Din, M. F.; Dou, S. X. [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Hoelzel, M. [FRM-II, Technische Universität München, 85747 Garching (Germany); Fachbereich Materialwissenschaften, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

    2014-05-07T23:59:59.000Z

    MnNiGa{sub 2} crystallizes in the L21 (Heusler) structure and has a ferromagnetic ordering temperature T{sub C}???192?K. Rietveld refinement of the neutron diffraction patterns indicates that the Ga atoms occupy the equivalent 8c position, while Mn and Ni share the 4a (0, 0, 0) and 4b (0.5, 0.5, 0.5) sites with a mixed occupancy of Mn and Ni atoms. It is found that that ?83% of Mn and ?17% Ni are located at the 4a site while ?83% of Ni and ?17% Mn occupy the 4b site. There is no evidence of a magneto-volume effect around T{sub C}. In agreement with this finding, our detailed critical exponent analyses of isothermal magnetization curves and the related Arrott plots confirm that the magnetic phase transition at T{sub C} is second order.

  4. Magnetic field-induced phase transformation and variant reorientation in Ni2MnGa and NiMnCoIn magnetic shape memory alloys

    E-Print Network [OSTI]

    Karaca, Haluk Ersin

    2009-05-15T23:59:59.000Z

    The purpose of this work is to reveal the governing mechanisms responsible for the magnetic field-induced i) martensite reorientation in Ni2MnGa single crystals, ii) stress-assisted phase transformation in Ni2MnGa single crystals and iii) phase...

  5. Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

    SciTech Connect (OSTI)

    Yastrubchak, O., E-mail: yastrub@hektor.umcs.lublin.pl [Institute of Physics, Maria Curie-Sklodowska University in Lublin, Pl. M. Curie-Sk?odowskiej 1, 20-031 Lublin (Poland); Institute of Semiconductor Physics, National Academy of Sciences, 41 pr. Nauki, 03028 Kyiv (Ukraine); Sadowski, J. [MAX-IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund (Sweden); Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Gluba, L.; ?uk, J.; Kulik, M. [Institute of Physics, Maria Curie-Sklodowska University in Lublin, Pl. M. Curie-Sk?odowskiej 1, 20-031 Lublin (Poland); Domagala, J. Z.; Andrearczyk, T.; Wosinski, T. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Rawski, M. [Analytical Laboratory, Maria Curie-Sklodowska University in Lublin, Pl. M. Curie-Sk?odowskiej 3, 20-031 Lublin (Poland)

    2014-08-18T23:59:59.000Z

    Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.

  6. Disentangling the Mn moments on different sublattices in the half-metallic ferrimagnet Mn3?xCoxGa

    SciTech Connect (OSTI)

    Klaer, P.; Jenkins, C.A.; Alijani, V.; Winterlik, J.; Balke, B.; Felser, C.; Elmers, H.J.

    2011-05-03T23:59:59.000Z

    Ferrimagnetic Mn{sub 3-x}Co{sub x}Ga compounds have been investigated by magnetic circular dichroism in x-ray absorption (XMCD). Compounds with x > 0.5 crystallize in the CuHg{sub 2}Ti structure. A tetragonal distortion of the cubic structure occurs for x {le} 0.5. For the cubic phase, magnetometry reveals a linearly increasing magnetization of 2x Bohr magnetons per formula unit obeying the generalized Slater-Pauling rule. XMCD confirms the ferrimagnetic character with Mn atoms occupying two different sublattices with antiparallel spin orientation and different degrees of spin localization and identifies the region 0.6 < x {le} 0.8 as most promising for a high spin polarization at the Fermi level. Individual Mn moments on inequivalent sites are compared to theoretical predictions.

  7. Inverse magnetocaloric effect in Mn{sub 2}NiGa and Mn{sub 1.75}Ni{sub 1.25}Ga magnetic shape memory alloys

    SciTech Connect (OSTI)

    Singh, Sanjay, E-mail: sanju8419@gmail.com; Barman, S. R. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452001 (India); Esakki Muthu, S.; Arumugam, S. [Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli 620024 (India); Senyshyn, A. [Forschungsneutronenquelle Heinz Maier-Leibnitz FRM-II, Technische Universität München, Lichtenbergstrasse 1, 85747 Garching b. München (Germany); Rajput, P. [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, F-38000 Grenoble (France); Suard, E. [Institut Laue-Langevin, BP 156, 38042 Grenoble Cedex 9 (France)

    2014-02-03T23:59:59.000Z

    Inverse magnetocaloric effect is demonstrated in Mn{sub 2}NiGa and Mn{sub 1.75}Ni{sub 1.25}Ga magnetic shape memory alloys. The entropy change at the martensite transition is larger in Mn{sub 1.75}Ni{sub 1.25}Ga, and it increases linearly with magnetic field in both the specimens. Existence of inverse magnetocaloric effect is consistent with the observation that magnetization in the martensite phase is smaller than the austenite phase. Although the Mn content is smaller in Mn{sub 1.75}Ni{sub 1.25}Ga, from neutron diffraction, we show that the origin of inverse magnetocaloric effect is the antiferromagnetic interaction between the Mn atoms occupying inequivalent sites.

  8. Regrowth of diluted magnetic semiconductor GaMnAs on InGaP (001) surfaces to realize freestanding micromechanical structures

    SciTech Connect (OSTI)

    Choi, Hyung Kook; Lee, Joon Sue; Cho, Sung Woon; Lee, Won Oh; Shim, Seung Bo; Park, Yun Daniel [CSCMR and FPRD Department of Physics and Astronomy, Seoul National University, NS 50, Seoul 151- 747 (Korea, Republic of)

    2007-03-15T23:59:59.000Z

    Low temperature molecular beam epitaxy regrowths of Ga{sub 1-x}Mn{sub x}As (x{approx_equal}0.04) diluted magnetic semiconductors on GaAs/In{sub 1-y}Ga{sub y}P/GaAs(001) and In{sub 1-y}Ga{sub y}P/GaAs(001) (y{approx_equal}0.51) heterostructures prepared by metal-organic chemical vapor deposition are described. The resulting Ga{sub 1-x}Mn{sub x}As properties are comparable to epitaxial films grown directly on GaAs (001) substrates from in situ reflection high-energy electron diffraction, x-ray diffraction, magnetometry, and transport measurements with magnetic ordering temperature of as-grown films to range between {approx}50 and {approx}60 K. Postgrowth low temperature annealing enhances both magnetic and transport properties. Perfect etch selectivity between Ga{sub 1-x}Mn{sub x}As/GaAs and In{sub 1-y}Ga{sub y}P is utilized to realize suspended Ga{sub 1-x}Mn{sub x}As/GaAs doubly clamped beam micromechanical freestanding structures.

  9. Structural transformations in Mn{sub 2}NiGa due to residual stress

    SciTech Connect (OSTI)

    Singh, Sanjay; Maniraj, M.; D'Souza, S. W.; Barman, S. R. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452001 (India); Ranjan, R. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India)

    2010-02-22T23:59:59.000Z

    Powder x-ray diffraction study of Mn{sub 2}NiGa ferromagnetic shape memory alloy shows the existence of a 7M monoclinic modulated structure at room temperature (RT). The structure of Mn{sub 2}NiGa is found to be highly dependent on residual stress. For higher stress, the structure is tetragonal at RT, and for intermediate stress it is 7M monoclinic. However, only when the stress is considerably relaxed, the structure is cubic, as is expected at RT since the martensitic transition temperature is 230 K.

  10. Modeling and Characterization of the Magnetocaloric Effect in Ni2MnGa Materials

    SciTech Connect (OSTI)

    Nicholson, Don M [ORNL; Odbadrakh, Khorgolkhuu [ORNL; Shassere, Benjamin [ORNL; Rios, Orlando [ORNL; Hodges, Jason P [ORNL; Ludtka, Gerard Michael [ORNL; Porter, Wallace D [ORNL; Safa-Sefat, Athena [ORNL; Rusanu, Aurelian [ORNL; Brown, Greg [ORNL; Evans III, Boyd Mccutchen [ORNL

    2014-01-01T23:59:59.000Z

    Magnetic shape memory alloys have great promise as magneto-caloric effect refrigerant materials due to their combined magnetic and structural transitions. Computational and experimental research is reported on the Ni2MnGa material system. The magnetic states of this system are explored using the Wang-Landau statistical approach in conjunction with the Locally Self-consistent Multiple-Scattering method. The effects of alloying agents on the transition temperatures of the Ni2MnGa alloy are investigated using differential scanning calorimetry and superconducting quantum interference device. Experiments are performed at the Spallation Neutron Source at Oak Ridge National Laboratory to observe the structural and magnetic phase transformations.

  11. Modulation on Ni{sub 2}MnGa(001) surface

    SciTech Connect (OSTI)

    D'Souza, S. W.; Rai, Abhishek; Nayak, J.; Maniraj, M.; Dhaka, R. S.; Barman, S. R.; Schlagel, D. L.; Lograsso, T. A. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, 452001, Madhya Pradesh (India); Ames Laboratory U. S. DOE, Iowa State University, Ames, Iowa 50011-3020 (United States)

    2011-07-15T23:59:59.000Z

    We report periodic modulation on (001) surface of Ni2MnGa ferromagnetic shape memory alloy. For the stoichiometric surface, analysis of the low energy electron diffraction (LEED) spot profiles shows that the modulation is incommensurate. The modulation appears at 200 K, concomitant with the first order structural transition to the martensitic phase.

  12. Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As

    E-Print Network [OSTI]

    Vyborny, Karel; Kucera, Jan; Sinova, Jairo; Rushforth, A. W.; Gallagher, B. L.; Jungwirth, T.

    2009-01-01T23:59:59.000Z

    Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the Ga...

  13. Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Vidyasagar, R., E-mail: dr.vidyasagar1979@gmail.com [Department of Physics and Centre for Nanoscience and Nanotechnology, National Sun-Yat Sen University, Kaohsiung 80424, Taiwan, ROC (China); Lin, Y.-T.; Tu, L.-W. [Department of Physics and Centre for Nanoscience and Nanotechnology, National Sun-Yat Sen University, Kaohsiung 80424, Taiwan, ROC (China)] [Department of Physics and Centre for Nanoscience and Nanotechnology, National Sun-Yat Sen University, Kaohsiung 80424, Taiwan, ROC (China)

    2012-12-15T23:59:59.000Z

    Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm{sup ?1}, by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ?50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ? GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ? The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ? The red shift in near band edge emission has been observed using micro-PL. ? A new peak related LVM at 578 cm{sup ?1} in micro-Raman scattering measurements confirmed Mn doped into GaN. ? Negative-magnetoresistance investigations have showed that the film has T{sub c} < 50 K. -- Abstract: Spectroscopic and magnetic properties of Mn doped GaN, and GaN epitaxial films have been investigated by employing micro-photoluminescence, micro-Raman, and temperature dependent magneto-resistance measurements. The HR-XRD profiles have shown that the epitaxial films are in hexagonal wurtzite structures. Morphology and composition of the films have been examined by field emission scanning electron microscopy, and energy-dispersive X-ray analysis. Micro-photoluminescence spectrum displayed a dominant near band edge emission at 362 nm, which is assigned to near band edge transition within the hexagonal structure of GaN. Raman scattering profiles showed a new vibrational mode at 578 cm{sup ?1}, which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

  14. Mn Occupations in Ga1-xMnxN Dilute Magnetic Semiconductors Probed by X-Ray Absorption Near-Edge Structure Spectroscopy

    SciTech Connect (OSTI)

    Wei Shiqiang; Yan Wensheng; Sun Zhihu; Liu Qinghua; Zhong Wenjie [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Zhang Xinyi [Department of Physics, Surface Physics Laboratory (National Key Laboratory), Fudan University, 220 Handan Road, Shanghai 200433 (China); Synchrotron Radiation Research Center, Fudan University, 220 Handan Road, Shanghai 200433 (China); Oyanagi, H. [Photonics Research Institute, National Institute of Advanced Industrial Science and Technology 1-1-1 Umezono Tsukuba, Ibaraki 305-8568 (Japan); Wu Ziyu [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039 (China)

    2007-02-02T23:59:59.000Z

    X-ray absorption near-edge structure (XANES) is used to study the characteristics of different sites of Mn in the Ga1-xMnxN dilute magnetic semiconductor (DMS) with zinc-blende structure. The XANES spectra of representative Mn occupation sites (substitutional MnGa, interstitial MnI, MnGa-MnI dimer and Mn cluster) in GaN lattice are theoretically calculated and compared with experimental results. The substitutional Mn in GaN is characterized by a pre-edge peak at 2.0 eV and a post-edge multiple-scattering peak at 29.1 eV. The peaks shift in position and drop in intensity dramatically for the interstitial MnI and MnGa-MnI dimmer, and disappear completely for Mn clusters. We propose that the distinct characteristics of Mn K-edge XANES spectra for different Mn sites favor to discriminate Mn occupations in GaMnN DMS.

  15. High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer

    SciTech Connect (OSTI)

    Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-0033 (Japan); Yatsui, Takashi; Ohtsu, Motoichi; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nanophotonics Research Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-09-21T23:59:59.000Z

    We investigated high-field electroluminescence (EL) in semiconductor tunnel junctions with a Mn-doped GaAs layer (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show visible light emissions with two peaks at 1.94?eV and 2.19?eV, which are caused by d-d transitions of the Mn atoms excited by hot electrons. The threshold voltages for band-gap and visible light EL in the tunnel junctions with a GaAs:Mn electrode are 1.3?V higher than those of GaAs:Mn excited by hot holes in reserve biased p{sup +}-n junctions, which is consistent with the hot carrier transport in the band profiles of these structures. Our EL results at room temperature show that the electron temperature in GaAs:Mn can be as high as ?700?K for a low input electrical power density of 0.4?W/cm{sup 2}, while the lattice temperature of the GaAs:Mn layer can be kept at 340?K.

  16. Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors 

    E-Print Network [OSTI]

    Sinova, Jairo; Jungwirth, T.; Liu, X.; Sasaki, Y.; Furdyna, JK; Atkinson, WA; MacDonald, AH.

    2004-01-01T23:59:59.000Z

    description of ferromagnetism in many diluted magnetic semiconductors ~DMS?s!, ~Ga,M- n!As in particular.2,3 Exchange-coupling between local mo- ments and itinerant electrons should also contribute signifi- 0163-1829/2004/69~8!/085209~6!/$22.50 69 085209... suggests g contributes significantly to the damping rate of the g the theoretical Gilbert coefficient with the values typical critical current for spin-transfer magnetization s low as ;105 A cm22. PACS number~s!: 73.20.Mf, 73.40.2c, 85.75.2d curate...

  17. Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors

    E-Print Network [OSTI]

    Jungwirth, T.; Wang, KY; Masek, J.; Edmonds, KW; Konig, J.; Sinova, Jairo; Polini, M.; Goncharuk, NA; MacDonald, AH; Sawicki, M.; Rushforth, AW; Campion, RP; Zhao, LX; Foxon, CT; Gallagher, BL.

    2005-01-01T23:59:59.000Z

    . DOI: 10.1103/PhysRevB.72.165204 PACS number#1;s#2;: 75.50.Pp, 75.30.Gw, 73.61.Ey I. INTRODUCTION After some frustration in the community caused by the difficulties encountered in overcoming the apparent Curie temperature limit in #1;Ga,Mn#2;As...Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors T. Jungwirth,1,2 K. Y. Wang,2 J. Ma?ek,3 K. W. Edmonds,2 J?rgen K?nig, 4 Jairo Sinova,5 M. Polini,6 N. A. Goncharuk,1 A. H. MacDonald,7 M. Sawicki,8 A. W. Rushforth,2 R. P...

  18. Structural, elastic, electronic, magnetic and vibrational properties of CuCoMnGa under pressure

    SciTech Connect (OSTI)

    ?yigör, Ahmet [Central Research and Practice Laboratory (AH?LAB), AhiEvran University, 40100 K?r?ehir (Turkey); U?ur, ?ule [Department of Physics, Faculty of Science, Gazi University, 06500 Ankara (Turkey)

    2014-10-06T23:59:59.000Z

    First principles calculations for the structural, electronic, elastic and phonon properties of the cubic quaternary heusler alloy CuCoMnGa on pressure have been reported by density functional theory (DFT) within generalized gradient approximation (GGA). The calculated values of the elastic constants were used for estimations of the Debye temperatures, the bulk modulus, the shear modulus, the young modulus E, the poisson's ratio ? and the B/G ratio. The elastic constants satisfy all of the mechanical stability criteria. The electronic structures of the ferromagnetic configuration for CuCoMnGa have a metallic character. The estimated magnetic moment per formula unit is 3.76 ?{sub B}. The phonon dispersion is studied using the supercell approach, and the stable nature at 0.2 GPa pressure is observed.

  19. First-principles calculations of the electronic, vibrational, and elastic properties of the magnetic laminate Mn?GaC

    SciTech Connect (OSTI)

    Thore, A., E-mail: andth@ifm.liu.se; Dahlqvist, M., E-mail: madah@ifm.liu.se, E-mail: bjoal@ifm.liu.se, E-mail: johro@ifm.liu.se; Alling, B., E-mail: madah@ifm.liu.se, E-mail: bjoal@ifm.liu.se, E-mail: johro@ifm.liu.se; Rosén, J., E-mail: madah@ifm.liu.se, E-mail: bjoal@ifm.liu.se, E-mail: johro@ifm.liu.se [Thin Film Physics Division, Department of Physics, Chemistry, and Biology, Linköping University, SE-581 83 Linköping (Sweden)

    2014-09-14T23:59:59.000Z

    In this paper, we report the by first-principles predicted properties of the recently discovered magnetic MAX phase Mn?GaC. The electronic band structure and vibrational dispersion relation, as well as the electronic and vibrational density of states, have been calculated. The band structure close to the Fermi level indicates anisotropy with respect to electrical conductivity, while the distribution of the electronic and vibrational states for both Mn and Ga depend on the chosen relative orientation of the Mn spins across the Ga sheets in the Mn–Ga–Mn trilayers. In addition, the elastic properties have been calculated, and from the five elastic constants, the Voigt bulk modulus is determined to be 157?GPa, the Voigt shear modulus 93?GPa, and the Young's modulus 233?GPa. Furthermore, Mn?GaC is found relatively elastically isotropic, with a compression anisotropy factor of 0.97, and shear anisotropy factors of 0.9 and 1, respectively. The Poisson's ratio is 0.25. Evaluated elastic properties are compared to theoretical and experimental results for M?AC phases where M?=?Ti, V, Cr, Zr, Nb, Ta, and A?=?Al, S, Ge, In, Sn.

  20. Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors

    SciTech Connect (OSTI)

    Prokof'eva, M. M., E-mail: marinaprkfeva@rambler.ru [Lobachevsky State University (Russian Federation); Dorokhin, M. V.; Danilov, Yu. A.; Kudrin, A. V.; Vikhrova, O. V. [Lobachevsky State University of Nizhni Novgorod, Physicotechnical Research Institute (Russian Federation)

    2010-11-15T23:59:59.000Z

    Electroluminescence characteristics of light-emitting diodes based on InGaAs/GaAs quantum well heterostructures with an injector layer made of ferromagnetic metal (Ni), semimetal compound (MnSb), or magnetic semiconductor (InMnAs) were comparatively studied. The general feature is electroluminescence quenching as the spacer layer thickness between a quantum well and a magnetic injector decreases. It was found that the temperature dependence of the electroluminescence in diodes with Ni and MnSb is caused by thermal ejection of carriers from the quantum well; in diodes with InMnAs, it is caused by the temperature dependence of the carrier concentration in magnetic semiconductor and thermal ejection of carriers from the quantum well in the high-temperature region.

  1. Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy

    SciTech Connect (OSTI)

    Veis, M., E-mail: veis@karlov.mff.cuni.cz; Beran, L.; Zahradnik, M.; Antos, R. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 12116 Prague (Czech Republic); Straka, L. [Aalto University School of Engineering, PL14200, FIN-00076 Aalto (Finland); Kopecek, J.; Fekete, L.; Heczko, O. [Institute of Physics, ASCR, Na Slovance 2, 182 21 Prague (Czech Republic)

    2014-05-07T23:59:59.000Z

    Magneto-optical properties of single crystal of Ni{sub 50.1}Mn{sub 28.4}Ga{sub 21.5} magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along (100) planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323?K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4?eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significant spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.

  2. Structural properties and large coercivity of bulk Mn{sub 3?x}Ga (0 ? x ? 1.15)

    SciTech Connect (OSTI)

    Wei, J. Z.; Wu, R.; Yang, Y. B.; Chen, X. G.; Xia, Y. H.; Yang, Y. C.; Wang, C. S. [School of Physics, Peking University, Beijing 100871 (China); Yang, J. B., E-mail: jbyang@pku.edu.cn [School of Physics, Peking University, Beijing 100871 (China); State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)

    2014-05-07T23:59:59.000Z

    The tetragonal DO{sub 22} phase of the Mn{sub 3?x}Ga compounds, with x varying from 0 to 1.15, has been successfully synthesized by annealing the ingots with the cubic ?-phase. It is found that the lattice parameter a of the tetragonal cell remains almost constant, while the lattice parameter c increases significantly as x varies from 0 to 1.15. In the meantime, the magnetization of Mn{sub 3?x}Ga (at 7?T) increases dramatically with increasing x. A substitution model, which is different to the model with manganese vacancies, is proposed to explain these changes. According to this model, the increase of the lattice parameter c and the magnetization with x can be explained by an assumption that Mn atoms at 2b sites are preferentially substituted by larger and nonmagnetic Ga atoms. A coercivity which is higher than that of other bulk Mn{sub 3?x}Ga alloys ever reported is achieved. Coercivities as large as iHc?=?21.4 kOe and 18.2 kOe are obtained for Mn{sub 3.0}Ga at 5?K and 300?K, respectively.

  3. Elastic Constants of Ni-Mn-Ga Magnetic Shape Memory Alloys

    SciTech Connect (OSTI)

    Stipcich, M. [Universitat de Barcelona; Manosa, L. [Universitat de Barcelona; Planes, A. [Universitat de Barcelona; Morin, M. [INSA de Lyon; Zarestky, Jerel L [ORNL; Lograsso, Tom [Ames Laboratory; Stassis, C. [Ames Laboratory

    2004-01-01T23:59:59.000Z

    We have measured the adiabatic second order elastic constants of two Ni-Mn-Ga magnetic shape memory crystals with different martensitic transition temperatures, using ultrasonic methods. The temperature dependence of the elastic constants has been followed across the ferromagnetic transition and down to the martensitic transition temperature. Within experimental errors no noticeable change in any of the elastic constants has been observed at the Curie point. The temperature dependence of the shear elastic constant C' has been found to be very different for the two alloys. Such a different behavior is in agreement with recent theoretical predictions for systems undergoing multi-stage structural transitions.

  4. Direct evidence of detwinning in polycrystalline Ni-Mn-Ga ferromagnetic shape memory alloys during deformation.

    SciTech Connect (OSTI)

    Nie, Z. H.; Lin Peng, R.; Johansson, S.; Oliver, E. C.; Ren, Y.; Wang, Y. D.; Liu, Y. D.; Deng, J. N.; Zuo, L.; Brown, D. E.; Northwestern Univ., China; Linkoping Univ.; Rutherford Appleton Lab.; Northern Illinois Univ.

    2008-01-01T23:59:59.000Z

    In situ time-of-flight neutron diffraction and high-energy x-ray diffraction techniques were used to reveal the preferred reselection of martensite variants through a detwinning process in polycrystalline Ni-Mn-Ga ferromagnetic shape memory alloys under uniaxial compressive stress. The variant reorientation via detwinning during loading can be explained by considering the influence of external stress on the grain/variant orientation-dependent distortion energy. These direct observations of detwinning provide a good understanding of the deformation mechanisms in shape memory alloys.

  5. Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys

    SciTech Connect (OSTI)

    Merida, D., E-mail: david.merida@ehu.es [Fisika Aplikatua II Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); Elektrizitate eta Elektronika Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); García, J. A. [Fisika Aplikatua II Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); BC Materials (Basque Centre for Materials, Application and Nanostructures), 48040 Leioa (Spain); Sánchez-Alarcos, V.; Pérez-Landazábal, J. I.; Recarte, V. [Departamento de Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Plazaola, F. [Elektrizitate eta Elektronika Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain)

    2014-06-09T23:59:59.000Z

    Vacancies control any atomic ordering process and consequently most of the order-dependent properties of the martensitic transformation in ferromagnetic shape memory alloys. Positron annihilation spectroscopy demonstrates to be a powerful technique to study vacancies in NiMnGa alloys quenched from different temperatures and subjected to post-quench isothermal annealing treatments. Considering an effective vacancy type the temperature dependence of the vacancy concentration has been evaluated. Samples quenched from 1173?K show a vacancy concentration of 1100?±?200?ppm. The vacancy migration and formation energies have been estimated to be 0.55?±?0.05?eV and 0.90?±?0.07?eV, respectively.

  6. Spin relaxation time dependence on optical pumping intensity in GaAs:Mn

    SciTech Connect (OSTI)

    Burobina, V. [Department of Physics and Astronomy, University of Utah, 115 South 1400 East, Salt Lake City, Utah 84112-0830 (United States); Binek, Ch. [Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, Theodore Jorgensen Hall, 855 North 16th Street, University of Nebraska, P.O. Box 880299, Lincoln, Nebraska 68588-0299 (United States)

    2014-04-28T23:59:59.000Z

    We analyze the dependence of electron spin relaxation time on optical pumping intensity in a partially compensated acceptor semiconductor GaAs:Mn using analytic solutions for the kinetic equations of the charge carrier concentrations. Our results are applied to previous experimental data of spin-relaxation time vs. excitation power for magnetic concentrations of approximately 10{sup 17}?cm{sup ?3}. The agreement of our analytic solutions with the experimental data supports the mechanism of the earlier-reported atypically long electron-spin relaxation time in the magnetic semiconductor.

  7. Structural controlled magnetic anisotropy in Heusler L1{sub 0}-MnGa epitaxial thin films

    SciTech Connect (OSTI)

    Wang Kangkang; Lu Erdong; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Knepper, Jacob W.; Yang Fengyuan [Department of Physics, Ohio State University, 191 Woodruff Ave., Columbus, Ohio 43210 (United States)

    2011-04-18T23:59:59.000Z

    Ferromagnetic L1{sub 0}-MnGa thin films have been epitaxially grown on GaN, sapphire, and MgO substrates using molecular beam epitaxy. Using diffraction techniques, the epitaxial relationships are determined. It is found that the crystalline orientation of the films differ due to the influence of the substrate. By comparing the magnetic anisotropy to the structural properties, a clear correlation could be established indicating that the in-plane and out-of-plane anisotropy is directly determined by the crystal orientation of the film and could be controlled via selection of the substrates. This result could be helpful in tailoring magnetic anisotropy in thin films for spintronic applications.

  8. Anti-site disorder and improved functionality of Mn?NiX (X = Al, Ga, In, Sn) inverse Heusler alloys

    SciTech Connect (OSTI)

    Paul, Souvik; Kundu, Ashis; Ghosh, Subhradip, E-mail: subhra@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India); Sanyal, Biplab [Department of Physics and Astronomy, Uppsala University, Box 516, 75120 Uppsala (Sweden)

    2014-10-07T23:59:59.000Z

    Recent first-principles calculations have predicted Mn?NiX (X = Al, Ga, In, Sn) alloys to be magnetic shape memory alloys. Moreover, experiments on Mn?NiGa and Mn?NiSn suggest that the alloys deviate from the perfect inverse Heusler arrangement and that there is chemical disorder at the sublattices with tetrahedral symmetry. In this work, we investigate the effects of such chemical disorder on phase stabilities and magnetic properties using first-principles electronic structure methods. We find that except Mn?NiAl, all other alloys show signatures of martensitic transformations in presence of anti-site disorder at the sublattices with tetrahedral symmetry. This improves the possibilities of realizing martensitic transformations at relatively low fields and the possibilities of obtaining significantly large inverse magneto-caloric effects, in comparison to perfect inverse Heusler arrangement of atoms. We analyze the origin of such improvements in functional properties by investigating electronic structures and magnetic exchange interactions.

  9. GaGa11--xxMnMnxxAsAs11--yyTeTeyy Synthesized bySynthesized by Ion Implantation & Pulsed Laser MeltingIon Implantation & Pulsed Laser Melting

    E-Print Network [OSTI]

    Priour, Don - Department of Physics, University of Missouri

    ] · stabilizing EF by compensation might allow higher MnGa add Te · experiment possible using II-PLM no chamber Implantation & Pulsed Laser Melting (IIPulsed Laser Melting (II--PLM)PLM) Excimer Laser Pulse GaAs Liquid Melt, NATURE MATERIALS 1 185 (2002) [4] Scarpulla, PHYSICA B 340 908 (2003) #12;IIII--PLM GaPLM Ga11--xx

  10. Point defects as a test ground for the local density approximation +U theory: Mn, Fe, and V{sub Ga} in GaN

    SciTech Connect (OSTI)

    Volnianska, O.; Zakrzewski, T. [Institute of Physics PAS, 02-668 Warsaw (Poland); Boguslawski, P. [Institute of Physics PAS, 02-668 Warsaw (Poland); Institute of Physics, Kazimierz Wielki University, 85-072 Bydgoszcz (Poland)

    2014-09-21T23:59:59.000Z

    Electronic structure of the Mn and Fe ions and of the gallium vacancy V{sub Ga} in GaN was analysed within the GGA + U approach. First, the +U term was treated as a free parameter, and applied to p(N), d(Mn), and d(Fe). The band gap of GaN is reproduced for U(N) ? 4 eV. The electronic structure of defect states was found to be more sensitive to the value of U than that of the bulk states. Both the magnitude and the sign of the U-induced energy shifts of levels depend on occupancies, and thus on the defect charge state. The energy shifts also depend on the hybridization between defect and host states, and thus are different for different level symmetries. In the case of V{sub Ga}, these effects lead to stabilization of spin polarization and the “negative-U{sub eff}” behavior. The values of Us were also calculated using the linear response approach, which gives U(Fe) ? U(Mn) ? 4 eV. This reproduces well the results of previous hybrid functionals calculations. However, the best agreement with the experimental data is obtained for vanishing or even negative U(Fe) and U(Mn)

  11. Delocalization and hybridization enhance the magnetocaloric effect in Ni2Mn0.75Cu0.25Ga

    SciTech Connect (OSTI)

    Roy, Sujoy; Blackburn, E.; Valvidares, S. M.; Fitzsimmons, M. R.; Vogel, Sven C.; Khan, M.; Dubenko, I.; Stadler, S.; Ali, N.; Sinha, S. K.; Kortright, J. B.

    2008-11-26T23:59:59.000Z

    In view of the looming energy crisis facing our planet, attention increasingly focuses on materials potentially useful as a basis for energy saving technologies. The discovery of giant magnetocaloric (GMC) compounds - materials that exhibit especially large changes in temperature as the externally applied magnetic field is varied - is one such compound 1. These materials have potential for use in solid state cooling technology as a viable alternative to existing gas based refrigeration technologies that use choro-fluoro - and hydro-fluoro-carbon chemicals known to have a severe detrimental effect on human health and environment 2,3. Examples of GMC compounds include Gd5(SiGe)4 4, MnFeP1-xAsx 5 and Ni-Mn-Ga shape memory alloy based compounds 6-8. Here we explain how the properties of one of these compounds (Ni2MnGa) can be tuned as a function of temperature by adding dopants. By altering the free energy such that the structural and magnetic transitions coincide, a GMC compound that operates at just the right temperature for human requirements can be obtained 9. We show how Cu, substituted for Mn, pulls the magnetic transition downwards in temperature and also, counterintuitively, increases the delocalization of the Mn magnetism. At the same time, this reinforces the Ni-Ga chemical bond, raising the temperature of the martensite-austenite transition. At 25percent doping, the two transitions coincide at 317 K.

  12. A non-volatile-memory device on the basis of engineered anisotropies in (Ga,Mn)As

    E-Print Network [OSTI]

    Loss, Daniel

    ARTICLES A non-volatile-memory device on the basis of engineered anisotropies in (Ga,Mn)As KATRIN by Moore's law, the semiconductor industry will need to develop novel device concepts that go beyond simple Hall effect6 , tunnelling AMR (TAMR)7­9 and Coulomb blockade AMR10 . These previous demonstrations have

  13. Magnetic-field-induced transformation in FeMnGa alloys

    SciTech Connect (OSTI)

    Zhu, W.; Liu, E. K.; Feng, L.; Tang, X. D.; Chen, J. L.; Wu, G. H. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Liu, H. Y.; Meng, F. B.; Luo, H. Z. [School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130 (China)

    2009-11-30T23:59:59.000Z

    A kind of ferromagnetic shape memory alloy with off-stoichiometric composition of Heusler alloy Fe{sub 2}MnGa has been synthesized. By optimizing composition, the martensitic transformation has been modified to occur at about 163 K accompanying spontaneous magnetization, which enables a magnetic field-induced structural transition from a paramagnetic parent phase to a ferromagnetic martensite with high magnetization of 93.8 emu/g. The material performs a quite large lattice distortion through the transformation, (c-a)/c=33.5%, causing a shape memory strain upto 3.6%. Such large lattice distortions strongly influence the electron structures, and thus some special physical behavior related to the transport and conductive properties is investigated.

  14. Effect of CoFe insertion in Co{sub 2}MnSi/CoFe/n-GaAs junctions on spin injection properties

    SciTech Connect (OSTI)

    Ebina, Yuya; Akiho, Takafumi; Liu, Hong-xi; Yamamoto, Masafumi; Uemura, Tetsuya, E-mail: uemura@ist.hokudai.ac.jp [Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814 (Japan)

    2014-04-28T23:59:59.000Z

    The CoFe thickness (t{sub CoFe}) dependence of spin injection efficiency was investigated for Co{sub 2}MnSi/CoFe/n-GaAs junctions. The ?V{sub NL}/I value, which is a measure of spin injection efficiency, strongly depended on t{sub CoFe}, where ?V{sub NL} is the amplitude of a nonlocal spin-valve signal, and I is an injection current. Importantly, the maximum value of ?V{sub NL}/I for a Co{sub 2}MnSi/CoFe/n-GaAs junction was one order of magnitude higher than that for a CoFe/n-GaAs junction, indicating that a Co{sub 2}MnSi electrode works as a highly polarized spin source. No clear spin signal, on the other hand, was observed for a Co{sub 2}MnSi/n-GaAs junction due to diffusion of Mn atoms into the GaAs channel. Secondary ion mass spectrometry analysis indicated that the CoFe insertion effectively suppressed the diffusion of Mn into GaAs, resulting in improved spin injection properties compared with those for a Co{sub 2}MnSi/n-GaAs junction.

  15. Effect of disorder on the magnetic properties of cubic Mn{sub 2}Ru{sub x}Ga compounds: A first-principles study

    SciTech Connect (OSTI)

    Galanakis, I., E-mail: galanakis@upatras.gr [Department of Materials Science, School of Natural Sciences, University of Patras, GR-26504 Patra (Greece); Özdo?an, K., E-mail: kozdogan@yildiz.edu.tr [Department of Physics, Yildiz Technical University, 34210 ?stanbul (Turkey); ?a??o?lu, E., E-mail: e.sasioglu@fz-juelich.de; Blügel, S. [Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich (Germany)

    2014-07-21T23:59:59.000Z

    We perform first-principles electronic structure calculations to explain the anomalous magnetic behavior of the Mn{sub 2}Ru{sub x}Ga compounds upon Ru doping as shown experimentally recently by Kurt et al. [Phys. Rev. Lett. 112, 027201 (2014)]. Our results suggest that disorder caused by the distribution of the Mn and Ru atoms at various sites reproduces the experimental data. All compounds present antiparallel alignment of the neighboring Mn magnetic moments and, with the exception of Mn{sub 2}RuGa, none of them presents half metallic behavior.

  16. Effect of ball milling and post-annealing on magnetic properties of Ni49.8Mn28.5Ga21.7 alloy powders

    E-Print Network [OSTI]

    Zheng, Yufeng

    , The University of Western Australia, Crawley WA6009, Australia c Department of Advanced Materials mechanical energy absorption [8,9]. Ni­Mn­Ga powders have been prepared by various methods, including spark

  17. Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy

    SciTech Connect (OSTI)

    Jenkins, Catherine; Scholl, Andreas; Kainuma, R.; Elmers, Hans-Joachim; Omori, Toshihiro

    2012-01-18T23:59:59.000Z

    The magnetic domain structure in single crystals of a Heusler shape memory compound near the composition Fe{sub 2}MnGa was observed during phase transition by photoelectron emission microscopy at Beamline 11.0.1.1 of the Advanced Light Source. The behavior is comparable with recent observations of an adaptive martensite phase in prototype Ni{sub 2}MnGa, although the pinning in the recent work is an epitaxial interface and in this work the e#11;ective pinning plane is a boundary between martensitic variants that transform in a self-accommodating way from the single crystal austenite phase present at high temperatures. Temperature dependent observations of the twinning structure give information as to the coupling behavior between the magnetism and the structural evolution.

  18. Extended investigation of intermartensitic transitions in Ni-Mn-Ga magnetic shape memory alloys: A detailed phase diagram determination

    SciTech Connect (OSTI)

    Çakir, Asli; Aktürk, Selçuk [Mu?la Üniversitesi, Fizik Bölümü, 48000 Mu?la (Turkey); Righi, Lara [Dipartimento Chimica GIAF, Universita di Parma, Parco Area delle Scienze 17/A, 43010 Parma (Italy); Albertini, Franca [IMEM-CNR, Parco Area delle Scienze 37/A, 43010 Parma (Italy); Acet, Mehmet; Farle, Michael [Faculty of Physics and Center for Nanointegration (CENIDE), Universität Duisburg-Essen, D-47048 Duisburg (Germany)

    2013-11-14T23:59:59.000Z

    Martensitic transitions in shape memory Ni-Mn-Ga Heusler alloys take place between a high temperature austenite and a low temperature martensite phase. However, intermartensitic transformations have also been encountered that occur from one martensite phase to another. To examine intermartensitic transitions in magnetic shape memory alloys in detail, we carried out temperature dependent magnetization, resistivity, and x-ray diffraction measurements to investigate the intermartensitic transition in Ni{sub 50}Mn{sub 50–x}Ga{sub x} in the composition range 12?x?25 at. %. Rietveld refined x-ray diffraction results are found to be consistent with magnetization and resistivity data. Depending on composition, we observe that intermartensitic transitions occur in the sequences 7M?L1{sub 0},?5M?7M, and 5M?7M?L1{sub 0} with decreasing temperature. The L1{sub 0} non-modulated structure is most stable at low temperature.

  19. Cubic GaN formation in MnGaN multilayer films grown on 6H-SiC,,0001... Y. Cui, V. K. Lazorov, M. M. Goetz, H. Liu, D. P. Robertson, M. Gajdardziska-Josifovska,

    E-Print Network [OSTI]

    Li, Lian

    Cubic GaN formation in MnÕGaN multilayer films grown on 6H-SiC,,0001... Y. Cui, V. K. Lazorov, M. M; accepted 30 April 2003 Cubic GaN was grown on 6H-SiC 0001 by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy. The growth process consisted of first depositing a 20-nm GaN buffer, followed by ten

  20. Effect of Heat-Treatment on the Phases of Ni-Mn-Ga Magnetic Shape Memory Alloys

    SciTech Connect (OSTI)

    Huq, Ashfia [ORNL; Ari-Gur, Pnina [Western Michigan University; Kimmel, Giora [University of the Negev; Richardson, James W [Argonne National Laboratory (ANL); Sharma, Kapil [Indian Institute of Technology, Kanpur

    2009-01-01T23:59:59.000Z

    The Heusler alloys Ni50Mn25+xGa25-x display magnetic shape memory effect (MSM) with very fast and large reversible strain under magnetic fields. This large strain and the speed of reaction make MSM alloys attractive as smart materials. Our crystallographic investigation of these alloys, focused on non-stoichiometric composition with excess of manganese. Using neutron diffraction, we revealed the necessary processing parameters to achieve and preserve the homogeneous metastable one-phase martensitic structure that is needed for an MSM effect at room temperature.

  1. Magnetic and magnetocaloric properties of Mn{sub 4–x}Fe{sub x}Ga?Sn

    SciTech Connect (OSTI)

    Eichenberger, L.; Malaman, B.; Mazet, T., E-mail: thomas.mazet@univ-lorraine.fr [Institut Jean Lamour, CNRS UMR 7198, Université de Lorraine, B.P. 70239, 54506 Vandoeuvre-lès-Nancy (France); Huang, J. H. [Baotou Research Institute of Rare Earths, Baotou 014030 (China)

    2014-09-14T23:59:59.000Z

    We investigate the magnetic and magnetocaloric properties of the new Mn{sub 4–x}Fe{sub x}Ga?Sn compounds (x = 0, 0.1, 0.4, 0.6, and 0.8) from DC magnetization measurements. These phases crystallize in a lacunar form of the ?-Fe{sub 2–x}Ge type of structure (P6?/mmc). They present a second-order paramagnetic to ferromagnetic transition whose temperature increases upon increasing the Fe content from TC=317 K for x=0 up to TC=411 K for x=0.8. The alloys with x?0.4 further exhibit another transition at lower temperature associated with a spin reorientation. The maximal magnetization and magnetic entropy change are found almost constant throughout the series close to ~7.4 ?B/f.u. and ~12 mJ cm³ K?¹ (for ???H=2.4 T), respectively. The magnetocaloric properties of Mn{sub 4–x}Fe{sub x}Ga?Sn are compared with those of previously investigated materials with high-temperature magnetic transition and their potential interest for high-temperature magnetocaloric applications is briefly discussed.

  2. Terahertz dynamics of photogenerated carriers in ferromagnetic InGaMnAs G. A. Khodaparast, D. C. Larrabee, and J. Konoa)

    E-Print Network [OSTI]

    Natelson, Douglas

    response of InGaMnAs/InP by two-color pump­ probe spectroscopy, using an intense near-infrared beam used an intense picosecond pulse of near- infrared NIR radiation to create a large density of nonequilibrium carriers, which modifies the transmission and reflection of a delayed pulse of terahertz THz

  3. The effects of small metal additions ,,Co,Cu,Ga,Mn,Al,Bi,Sn... on the magnetocaloric properties of the Gd5Ge2Si2 alloy

    E-Print Network [OSTI]

    Kletetschka, Gunther

    .1 X=Fe,Cu,Co,Ga,Mn, or Al alloys are superior magnetic refrigerants compared to the undoped Gd5Ge2Si2 magnetic refrigerant because of its large "giant" magnetocaloric effect Sm between 270 and 300 K.1 more useful magnetic refrigerant than the undoped Gd5Ge2Si2 compound. Further, it was concluded

  4. Neutron diffraction study of the magnetic-field-induced transition in Mn{sub 3}GaC

    SciTech Connect (OSTI)

    Çakir, Ö. [Physics Department, Yildiz Technical University, TR-34220 Esenler, Istanbul (Turkey); Physics Engineering Department, Ankara University, TR-06100 Ankara (Turkey); Acet, M.; Farle, M. [Faculty of Physics and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Senyshyn, A. [Forschungsneutronenquelle Heinz Maier-Leibnitz FRM-II, Technische Universität München, D-85747 Garching bei München (Germany)

    2014-01-28T23:59:59.000Z

    The antiperovskite Mn{sub 3}GaC undergoes an isostructural cubic–cubic first order transition from a low-temperature, large-cell-volume antiferromagnetic state to a high-temperature, small-cell-volume ferromagnetic state at around 160?K. The transition can also be induced by applying a magnetic field. We study here the isothermal magnetic-field-evolution of the transition as ferromagnetism is stabilized at the expense of antiferromagnetism. We make use of the presence of the two distinct cell volumes of the two magnetic states as a probe to observe by neutron diffraction the evolution of the transition, as the external magnetic field carries the system from the antiferromagnetic to the ferromagnetic state. We show that the large-volume antiferromagnetic and the small-volume ferromagnetic states coexist in the temperature range of the transition. The ferromagnetic state is progressively stabilized as the field increases.

  5. 4D STUDY OF STRAIN GRADIENTS EVOLUTION IN TWINNED NiMnGa SINGLE CRYSTALS UNDER MAGNETIC FIELD

    SciTech Connect (OSTI)

    Barabash, Rozaliya [ORNL; Xu, Ruqing [Argonne National Laboratory (ANL); Barabash, Oleg M [ORNL; Sozinov, Alexei [AdaptaMat, Finland

    2014-01-01T23:59:59.000Z

    Time-resolved 3D X-ray microscopy with a submicron beam size was used to follow the evolution of strains in off-stoichiometric NiMnGa twinned crystals near type I (hard) twin boundary under magnetic field. Laminate A/B microstructure was revealed near the twin boundaries in A variant. Large strain gradients are observed in the C variant in the immediate vicinity of the type I twin boundary: the lattice is under large tensile strains ~0.4% along the c- axes within first micron. Distinct a and b lattice parameter evolution with temperature and magnetic field is demonstrated. In an applied magnetic field the strain field was observed at larger distances from the twin boundary and becomes more complex. Stochastic twin boundary motion was observed after the magnetic field reaches a certain critical value.

  6. Magnetostructure of MnAs on GaAs revisited E. Bauer,1,2

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    introduced a model in which the crystal changed from a high spin state in the phase to a low spin state change during the phase transition is connected with a change of the sign of the exchange constant via material. hal-00193844,version1-4Dec2007 #12;3 FIG. 1. Structure of MnAs. (a) Hexagonal phase (NiAs type

  7. Forestry Policies (Georgia)

    Broader source: Energy.gov [DOE]

    Georgia's Forests are managed by the Georgia Forestry Commission. In 2009 the Commission completed a statewide assessment of biomass resources:

  8. Georgia Hazardous Site Response Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Hazardous Site Response Act is Georgia’s version of Superfund. The Act provides for graduated fees on the disposal of hazardous waste, a trust fund to enable the EPD to clean up or plan...

  9. Georgia Radiation Control Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Radiation Control Act is designed to prevent any associated harmful effects upon the environment or the health and safety of the public through the institution and maintenance of a...

  10. Co doping enhanced giant magnetocaloric effect in Mn{sub 1-x}Co{sub x}As films epitaxied on GaAs (001)

    SciTech Connect (OSTI)

    Xu, P. F.; Nie, S. H.; Meng, K. K.; Wang, S. L.; Chen, L.; Zhao, J. H. [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

    2010-07-26T23:59:59.000Z

    A giant magnetocaloric effect was found in series of Mn{sub 1-x}Co{sub x}As films epitaxied on GaAs (001). The maximum magnetic entropy change caused by a magnetic field of 4 T is as large as 25 J/kg K around room temperature, which is about twice the value of pure MnAs film. The observed small thermal hysteresis is more suitable for practical application. Growing of layered Mn{sub 1-x}Co{sub x}As films with Co concentration changing gradually may draw layered active magnetic regenerator refrigerators closer to practical application. Our experimental result may provide the possibility for the combination of magnetocaloric effect and microelectronic circuitry.

  11. Georgia Geriatric Education Center

    E-Print Network [OSTI]

    Arnold, Jonathan

    Georgia Geriatric Education Center © Photography courtesy of the U.S. Administration on Aging. Georgia Geriatric Education Center Latestresourcesandtrainingforbestpracticesingerontologyandgeriatrics. The Georgia Geriatric Education Center (GGEC) is a statewide effort designed to help you access the latest

  12. Georgia Water Quality Control Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Water Quality Control Act (WQCA) is a set of environmental regulations and permitting requirements that comply with the federal Clean Water Act. The Georgia Water Quality Control Act...

  13. Georgia Erosion and Sedimentation Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Erosion and Sedimentation Act (GESA) is designed to protect vegetated buffers. GESA establishes a minimum undisturbed, vegetated buffer of 25 feet for all streams in Georgia (measured...

  14. Mn-and Fe-doped GaN for spintronic applications Enno Malguth1,2

    E-Print Network [OSTI]

    Nabben, Reinhard

    Resonant Raman scattering on free and bound excitons in GaN A. Kaschner,* A. Hoffmann, and C Raman scattering effect in GaN at low temperatures applying a frequency-doubled titan-sapphire laser to detect inelastic scattered light from small sample volumes, for instance, in buried Al- GaN structures7

  15. Effects of the interplay between atomic and magnetic order on the properties of metamagnetic Ni-Co-Mn-Ga shape memory alloys

    SciTech Connect (OSTI)

    Seguí, C., E-mail: concepcio.segui@uib.es [Departament de Física, Universitat de les Illes Balears, Campus universitari. Cra. de Valldemossa km 7.5, 07122 Palma de Mallorca (Spain)

    2014-03-21T23:59:59.000Z

    Ni-Co-Mn-Ga ferromagnetic shape memory alloys show metamagnetic behavior for a range of Co contents. The temperatures of the structural and magnetic transitions depend strongly on composition and atomic order degree, in such a way that combined composition and thermal treatment allows obtaining martensitic transformation between any magnetic state of austenite and martensite. This work presents a detailed analysis of the effect of atomic order on Ni-Co-Mn-Ga alloys through the evolution of structural and magnetic transitions after quench from high temperatures and during post-quest ageing. It is found that the way in which the atomic order affects the martensitic transformation temperatures and entropy depends on the magnetic order of austenite and martensite. The results can be explained assuming that improvement of atomic order decreases the free energy of the structural phases according to their magnetic order. However, it is assumed in this work that changes in the slope—that is, the entropy—of the Gibbs free energy curves are also decisive to the stability of the two-phase system. The experimental transformation entropy values have been compared with a phenomenological model, based on a Bragg–Williams approximation, accounting for the magnetic contribution. The excellent agreement obtained corroborates the magnetic origin of changes in transformation entropy brought about by atomic ordering.

  16. Single crystal neutron diffraction study of lattice and magnetic structures of 5M modulated Ni2Mn1.14Ga0.86

    SciTech Connect (OSTI)

    Pramanick, Abhijit [ORNL] [ORNL; Wang, Xiaoping [ORNL] [ORNL; An, Ke [ORNL] [ORNL; Stoica, Alexandru Dan [ORNL] [ORNL; Hoffmann, Christina [ORNL] [ORNL; Wang, Xun-Li [ORNL] [ORNL

    2012-01-01T23:59:59.000Z

    A comprehensive description of the crystal and magnetic structures of Ni-Mn-Ga magnetic shape memory alloys is important to understand the physical origins of their magnetoelastic properties. These structural details for an off-stoichiometric Ni2Mn1.14Ga0.86 alloy have been obtained from refinement of high-resolution single crystal neutron diffraction data following a (3+1)-dimensional superspace formalism. In particular, the structure adopts a P2/m( 0 )00 (3+1)-D superspace symmetry with the following fundamental lattice parameters: a=4.255(4) , b=5.613(4) , c=4.216(3) , a commensurate periodicity of 5M and a modulation wave vector of . The magnetic moments are aligned along the b-axis. The modulations for atomic site displacements, site occupancies and magnetic moments are elucidated from a (3+1)-D refinement of the neutron diffraction data. In addition to atomic displacements corresponding to shear waves along <110>, distortions of Ni-centric tetrahedra are also evident. Physical interpretations for the different structural distortions and their relationship with magnetic properties are discussed.

  17. Chemical synthesis of crystalline, pure or Mn-doped ZnGa2O4 powders at 90 C

    E-Print Network [OSTI]

    Tas, A. Cuneyt

    in a constant-temperature laboratory oven. Single-phase pure or Mn-doped zinc gallate powders synthesized-ray diffraction, scanning electron microscopy, energy-dispersive x-ray spectroscopy, inductively-coupled plasma

  18. Changes of the local distortions and colossal magnetoresistive properties of La(0.7)Ca(0.3)MnO(3) induced by Ti or Ga defects

    SciTech Connect (OSTI)

    Bridges, F.; Cao, D.; Anderson, M.; Ramirez, A.P.; Olapinski, M.; Subramanian, M.A.; Booth, C.H.; Kwei, G.

    2002-07-12T23:59:59.000Z

    The magnetoresistive properties of La0.7Ca0.3MnO3 change rapidly when Ti or Ga are substituted on the Mn site for concentrations, x, from 1 to 10 percent. The samples exhibit colossal magnetoresistance (CMR) and the resistivity increases dramatically with dopant concentration. The temperature of the resistivity peak, TR, shifts rapidly to lower temperatures with increasing x and the ferromagnetic transition broadens. However, the transition temperature, Tc, is only slightly suppressed. Consequently, TR occurs well below Tc for x above 2 percent. Investigations of these materials using Mn XAFS show that changes in the local structure, parametrized by the pair-distribution width, sigma, correlate well with Tc and the sample magnetization. For a given dopant, the resistivity peak occurs when sigma{sup 2} decreases below a critical value. Both dopants produce extended defects which increases the resistivity of the nearby materials considerably. The data suggest that even at x {approx}4 percent, most of the sites are slightly distorted at low T.

  19. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    , and lake associations. At the national level, GWRI has collaborative efforts with the California Energy with support from the U.S. Agency for International Development, World Bank, Food and Agriculture Organization Prices in Georgia" USGS 104B/GWRI Project, Susanna Ferriera # 2011GA275B #1266663 (3) Impact of Upstream

  20. Georgia Underground Storage Tank Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Underground Storage Act (GUST) provides a comprehensive program to prevent, detect, and correct releases from underground storage tanks (“USTs”) of “regulated substances” other than...

  1. Georgia Tech Dangerous Gas

    E-Print Network [OSTI]

    Sherrill, David

    1 Georgia Tech Dangerous Gas Safety Program March 2011 #12;Georgia Tech Dangerous Gas Safety.......................................................................................................... 5 6. DANGEROUS GAS USAGE REQUIREMENTS................................................. 7 6.1. RESTRICTED PURCHASE/ACQUISITION RULES: ................................................ 7 7. FLAMMABLE GAS

  2. Systematic analysis of the crystal structure, chemical ordering, and microstructure of Ni-Mn-Ga ferromagnetic shape memory alloys

    E-Print Network [OSTI]

    Richard, Marc Louis

    2005-01-01T23:59:59.000Z

    Ni-n-Ga based ferromagnetic shape-memory alloys (FSMAs) have shown great promise as an active material that yields a large output strain over a range of actuation frequencies. The maximum strain has been reported to be 6% ...

  3. In-situ high-energy x-ray diffuse-scattering study of the phase transition in a Ni{sub 2}MnGa ferromagnetic shape-memory crystal.

    SciTech Connect (OSTI)

    Wang, G.; Yan-Dong, W.; Yang, R.; Yan-Dong, L.; Peter, L. K.; X-Ray Science Division; Northeastern Univ.; Univ. of Tennessee

    2008-12-01T23:59:59.000Z

    The full information on the changes in many crystallographic aspects, including the structural and microstructural characterizations, during the phase transformation is essential for understanding the phase transition and 'memory' behavior in the ferromagnetic shape-memory alloys. In the present article, the defects-related microstructural features connected to the premartensitic and martensitic transition of a Ni{sub 2}MnGa single crystal under a uniaxial pressure of 50 MPa applied along the [110] crystallographic direction were studied by the in-situ high-energy X-ray diffuse-scattering experiments. The analysis of the characteristics of diffuse-scattering patterns around different sharp Bragg spots suggests that the influences of some defect clusters on the pressure-induced phase-transition sequences of Ni2MnGa are significant. Our experiments show that an intermediate phase is produced during the premartensitic transition in the Ni{sub 2}MnGa single crystal, which is favorable for the nucleation of a martensitic phase. The compression stress along the [110] direction of the Heusler phase can promote the premartensitic and martensitic transition of the Ni{sub 2}MnGa single crystal.

  4. Georgia Air Quality Control Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Air Quality Control Act (AQCA) is a set of environmental regulations, permitting requirements, and air quality standards that control the amount of pollutants emitted and who emits them...

  5. Georgia Surface Mining Act of 1968 (Georgia)

    Broader source: Energy.gov [DOE]

    This law regulates all surface mining in Georgia, including the coastal zone. It includes provisions to “advance the protection of fish and wildlife and the protection and restoration of land,...

  6. Georgia Safe Dams Act of 1978 (Georgia)

    Broader source: Energy.gov [DOE]

    The purpose of the Georgia Safe Dams Act is to provide regulation, inspection and permitting of dams to the State. The Director of the Environmental Protection Division (EPD) is responsible for...

  7. Shore Protection Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Shore Protection Act is the primary legal authority for protection and management of Georgia's shoreline features including sand dunes, beaches, sandbars, and shoals, collectively known as the...

  8. Influence of boron on the microstructural and mechanical properties of Ni{sub 53.5}Mn{sub 26.0}Ga{sub 20.5} shape memory alloy

    SciTech Connect (OSTI)

    Ramudu, M., E-mail: macrams2@gmail.com; Kumar, A. Satish, E-mail: macrams2@gmail.com; Seshubai, V., E-mail: macrams2@gmail.com [School of Physics, University of Hyderabad, Central University P. O., Hyderabad - 500 046 (India); Rajasekharan, T. [Department of Physics, Rajiv Gandhi University of Knowledge Technologies, IIIT-Campus, Gachibowli, Hyderabad - 500 032 (India)

    2014-04-24T23:59:59.000Z

    Boron addition to Ni{sub 53.5}Mn{sub 26.0}Ga{sub 20.5} alloy is found to modify the microstructure and mechanical properties substantially. Studies on (Ni{sub 53.5}Mn{sub 26.0}Ga{sub 20.5})B{sub x} alloys reveal that boron addition causes grain refinement which led to an increase in compressive strength in x=0.5 alloy which also retained multimode twinning. Substantial second phase segregation rich in Ni was seen at grain boundaries, the extent of which increased with boron content. This led to a compositional shift in the matrix phase which resulted in a reduction in the martensitic transformation temperature and which in turn caused an easy deformation at low stresses and suppression of multimode twinning in x=1.0 alloy.

  9. Annealing temperature and thickness dependence of magnetic properties in epitaxial L1{sub 0}-Mn{sub 1.4}Ga films

    SciTech Connect (OSTI)

    Zheng, Y. H., E-mail: elezheng@nus.edu.sg; Lu, H.; Teo, K. L. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Han, G. C. [Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore)

    2014-01-28T23:59:59.000Z

    Mn{sub 1.4}Ga films with high perpendicular magnetic anisotropy and high crystalline quality were grown on MgO substrates with Cr buffer layer using molecular beam epitaxy. The crystalline structure and the surface morphology of the films have been systematically investigated as functions of in-situ annealing temperature (T{sub a}) and film thickness. It is found that the magnetic properties can be largely tuned by adjusting T{sub a}. As T{sub a} increases, both saturation magnetization (M{sub s}) and uniaxial perpendicular magnetic anisotropy constant (K{sub u}) increase to the maximum values of 612?emu/cc and 18?Merg/cc at 300?°C, respectively, and then decrease. The morphology also changes with T{sub a}, showing a minimum roughness of 2.2?Å at T{sub a}?=?450?°C. On the other hand, as the thickness increases, M{sub s} and K{sub u} increase while coercivity decreases, which indicates there is a magnetic dead layer with a thickness of about 1.5?nm at the interfaces. The detailed examination on the surface morphology of the films with various thicknesses shows a complicated film growth process, which can be understood from the relaxation mechanism of the interfacial strain.

  10. Georgia Underground Gas Storage Act of 1972 (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Underground Gas Storage Act, which permits the building of reserves for withdrawal in periods of peak demand, was created to promote the economic development of the State of Georgia and...

  11. Michael J. Poston Atlanta, GA 30307

    E-Print Network [OSTI]

    Orlando, Thomas

    Page | 1 Michael J. Poston Atlanta, GA 30307 Michael.Poston@gatech.edu Cell: 770.561.4756 U.S. Citizen Education PhD Candidate in Chemistry Georgia Institute of Technology, Atlanta, GA August 2007 with Application to Lunar Observations," JGR ­ Planets, 118, 105, doi: 10.1002/jgre.20025. Poston, M. J

  12. University of Georgia 2020 Strategic Plan

    E-Print Network [OSTI]

    Arnold, Jonathan

    ......................................................................34 Appendix E. University of Georgia Funding Source Trend Summary..........................................35University of Georgia 2020 Strategic Plan Building on Excellence October 30, 2012 #12;Building...............................................................................................................................................1 The Mission of the University of Georgia

  13. Georgia Oil and Gas Deep Drilling act of 1975 (Georgia)

    Broader source: Energy.gov [DOE]

    Georgia's Oil and Gas and Deep Drilling Act regulates oil and gas drilling activities to provide protection of underground freshwater supplies and certain "environmentally sensitive" areas. The...

  14. Georgia Comprehensive Solid Waste Management Act of 1990 (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Comprehensive Solid Waste Management Act (SWMA) of 1990 was implemented in order to improve solid waste management procedures, permitting processes and management throughout the state. ...

  15. PHYSICAL REVIEW B 88, 205203 (2013) Magnetic anisotropy of single Mn acceptors in GaAs in an external magnetic field

    E-Print Network [OSTI]

    Flatte, Michael E.

    2013-01-01T23:59:59.000Z

    .1103/PhysRevB.88.205203 PACS number(s): 75.50.Pp I. INTRODUCTION Magnetic semiconductors have attracted properties in spintronic devices. The most commonly investigated material as a magnetic semiconductor is Ga

  16. Georgia Hazardous Waste Management Act

    Broader source: Energy.gov [DOE]

    The Georgia Hazardous Waste Management Act (HWMA) describes a comprehensive, Statewide program to manage hazardous wastes through regulating hazardous waste generation, transportation, storage,...

  17. High strain in polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys under overlapped static and oscillating magnetic fields

    SciTech Connect (OSTI)

    Montanher, D. Z.; Pereira, J. R. D.; Cótica, L. F.; Santos, I. A. [Department of Physics, State University of Maringá, Av. Colombo 5790, Maringá - PR 87020-900 (Brazil); Gotardo, R. A. M. [Technological Federal University of Paraná, Av. Alberto Carazzai 1640, Cornélio Procópio - PR 86300-000 (Brazil); Viana, D. S. F.; Garcia, D.; Eiras, J. A. [Department of Physics, Federal University of São Carlos, Rod. Washington Luiz, Km 235, São Carlos - SP 13565-905 (Brazil)

    2014-09-21T23:59:59.000Z

    Martensitic polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys, with a stacking period of 14 atomic planes at room temperature, were innovatively processed by combining high-energy ball milling and powder metallurgy. Bulk samples were mechanically coupled to a piezoelectric material in a parallel configuration, and the mechanical deformation of the studied system due to the twin's variant motion was investigated under overlapped static and oscillating magnetic fields. A reversible and high mechanical deformation is observed when the frequency of the oscillating magnetic field is tuned with the natural vibration frequency of this system. In this condition, a linear deformation as a function of the static magnetic field amplitude occurs in the ±4 kOe range, and a mechanical deformation of 2% at 10 kOe is observed.

  18. 2014 Race to Zero Student Design Competition: Georgia Institute...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia...

  19. Mn L3,2 X-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    and pulsed-laser melting (II-PLM) [2-4]. At 0.4 eV above thex P were synthesized by II-PLM [10]. GaP (001) wafers dopedthis material formed by II-PLM have shown that its magnetic

  20. Georgia Biofuel Directory A directory of Georgia industries that use biofuels.

    E-Print Network [OSTI]

    Georgia Biofuel Directory · A directory of Georgia industries that use biofuels. · Completed in May _________________________________________________________________ 3 Biofuels_____________________________________________________________________ 4 Biofuel Use in Georgia that Burn Self-Generated Biofuels as of May 2003__ 4 Chart 1.0 Biofuel Use from Contacted

  1. Georgia Cities Foundation- Green Communities Revolving Loan Fund (Georgia)

    Broader source: Energy.gov [DOE]

    The Green Communities Fund is a revolving loan fund providing low-interest loans to businesses located within the city limits of any city in Georgia. Loans are available for existing as well as new...

  2. Georgia Interfaith Power and Light- Energy Improvement Grants (Georgia)

    Broader source: Energy.gov [DOE]

    Georgia Interfaith Power and Light (GIPL) offers grants of up to $10,000 to congregations or faith-based communities, including faith-based schools. Grant funds may be used for energy conservation...

  3. Georgia Power- Solar Buyback Program

    Broader source: Energy.gov [DOE]

    Georgia Power, the state's largest utility, has established a green power program, that allows the company to purchase limited solar generation at a premium price based on other customers volunta...

  4. Georgia Power- Advanced Solar Initiative

    Broader source: Energy.gov [DOE]

    Note: According to Georgia Power's website, the Advanced Solar Initiative's final program guidelines are due to be published on June 25th and the bidding period for is expected to open on July 10,...

  5. A climatology, synoptic assessment, and thermodynamic evaluation for cloud-to-ground lightning in Georgia: a study for the 1996 Summer Olympics

    E-Print Network [OSTI]

    Livingston, Eric Scott

    1995-01-01T23:59:59.000Z

    flash density within 50 km of Savannah, Georgia for the month of August from 1986 to 1993. . . . . . . . . 35 Average ground flash density within 50 km of the Ocoee River in Tennessee for the month of July from 1986 to 1993.... LATITUDE LONGITUDE Ol ic Rin Columbus, GA Con ers, GA Athens, GA Ocoee River, TN Stone Mtn. , GA Wolf Creek, GA Savannah, GA Gainesville, GA 33. 74 32. 52 33. 67 33. 95 35. 07 33. 80 33. 67 32. 13 34. 32 84. 40 84. 95 83. 97 83. 32...

  6. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    dissemination, and works collaboratively with various local, state, and federal agencies. These include #35334). (5) Tidal Streams: A Renewable Energy Source for Georgia , Kevin Haas, Georgia Institute, environmental organizations, lake associations, California Energy Commission, California Department of Water

  7. Georgia Green Loans Save and Sustain Program

    Broader source: Energy.gov [DOE]

    Georgia Green Loans, a non-profit microlending agency, offers funding to "green" businesses using funding from a Georgia Environmental Finance Authority (GEFA) grant. The GEFA grant is based on...

  8. Molecular Dynamics Simulation of GaAs Molecular Beam Epitaxy D. A. Murdick,1

    E-Print Network [OSTI]

    Wadley, Haydn

    of Virginia, Charlottesville, Virginia 22904, USA 2 Department of Materials, University of Oxford, Oxford OX1 3PH, UK ABSTRACT The vapor deposition of epitaxial GaAs and (Ga,Mn)As thin films during far-temperature growth of Ga0.94Mn0.06As and the Mn clustering trends in as-grown films. INTRODUCTION GaAs is widely used

  9. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01T23:59:59.000Z

    Mn)As: A new diluted magnetic semiconductor based on GaAs.Mn x Ge 1-x diluted magnetic semiconductor: experiment andx Si 1-x amorphous magnetic semiconductor. Phys. Rev. B 67 ,

  10. Role of Embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN X. Y. Cui,1

    E-Print Network [OSTI]

    Medvedeva, Julia E.

    Role of Embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN X. Y. Cui,1 J. E provide direct evidence that Cr atoms in Cr:GaN have a strong tendency to form embedded clusters, to date, the ma- jority of first-principles investigations into DMS--and Cr:GaN, Mn:GaN, and Mn

  11. Georgia Southern University Information Technology

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Information Technology Organization Chart 2013-2014 FINAL: September 18, 2013 R\\Work\\Common:\\OrgCharts\\Rev2014\\ Information Technology \\CIO Produced: Strategic Research of the groups of units reporting there. President Vice President for Information Technology and Chief

  12. Georgia Tech Vehicle Acquisition and

    E-Print Network [OSTI]

    1 2012 Georgia Tech 10/10/2012 Vehicle Acquisition and Disposition Manual #12;2 Vehicle Procedures Regardless of value, all vehicles should be included in this process. Acquisition of a Vehicle 1. Contact Fleet Coordinator to guide the departments in the purchasing process for all vehicles. 2. Fill out

  13. Updated 11/1/2012 GEORGIA INSTITUTE OF TECHNOLOGY

    E-Print Network [OSTI]

    Li, Mo

    Updated 11/1/2012 GEORGIA INSTITUTE OF TECHNOLOGY OFFICE OF FINANCIAL SERVICES ADMINSTRATION Cash/Investment Management Debt Management Georgia Tech Facilities, Inc. Georgia Advanced Technology Ventures, Inc. Project Accounting Cost Accounting Rate Studies Negotiations Salary, Planning

  14. GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY

    E-Print Network [OSTI]

    Das, Suman

    GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY Ratified by the Institute Council on Environmental Health and Safety August 2008 POLICY Georgia Institute of Technology (Georgia environmental health and safety laws and regulations; and Demonstrating leadership in pollution prevention

  15. Renewable and Non-Renewable Resources Tariff RNR-7 (Georgia)

    Broader source: Energy.gov [DOE]

    The Renewable and Non-Renewable Resource tariff is authorized by the Georgia Public Service Commission (PSC), which requires that the investor owned utility, Georgia Power Company, purchase...

  16. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia...

    Office of Environmental Management (EM)

    Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking October...

  17. GEORGIA RECOVERY ACT SNAPSHOT | Department of Energy

    Energy Savers [EERE]

    ACT SNAPSHOT Georgia has substantial natural resources, including biomass and hydroelectric power .The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  18. Qualifying RPS State Export Markets (Georgia)

    Broader source: Energy.gov [DOE]

    This entry lists the states with Renewable Portfolio Standard (RPS) policies that accept generation located in Georgia as eligible sources towards their RPS targets or goals. For specific...

  19. Petroleum Pipeline Eminent Domain Permit Procedures (Georgia)

    Broader source: Energy.gov [DOE]

    The Petroleum Pipeline Eminent Domain Permit Procedures serve to protect Georgia's natural and environmental resources by requiring permits be issued by the Director of the Environmental Protection...

  20. Ni-Mn-Ga shape memory nanoactuation

    SciTech Connect (OSTI)

    Kohl, M., E-mail: manfred.kohl@kit.edu; Schmitt, M.; Krevet, B. [Karlsruhe Institute of Technology, IMT, P.O. Box 3640, 76021 Karlsruhe (Germany); Backen, A.; Schultz, L. [IFW Dresden, P.O. Box 270116, 01171 Dresden (Germany); Fähler, S. [IFW Dresden, P.O. Box 270116, 01171 Dresden (Germany); Technische Universität Chemnitz, Institute of Physics, 09107 Chemnitz (Germany)

    2014-01-27T23:59:59.000Z

    To probe finite size effects in ferromagnetic shape memory nanoactuators, double-beam structures with minimum dimensions down to 100?nm are designed, fabricated, and characterized in-situ in a scanning electron microscope with respect to their coupled thermo-elastic and electro-thermal properties. Electrical resistance and mechanical beam bending tests demonstrate a reversible thermal shape memory effect down to 100?nm. Electro-thermal actuation involves large temperature gradients along the nanobeam in the order of 100?K/?m. We discuss the influence of surface and twin boundary energies and explain why free-standing nanoactuators behave differently compared to constrained geometries like films and nanocrystalline shape memory alloys.

  1. Wood Fired Steam Plants in Georgia 

    E-Print Network [OSTI]

    Bulpitt, W. S.

    1983-01-01T23:59:59.000Z

    . Shortly after that time, Georgia Tech and the Georgia Forestry Commission embarked on a number of projects directed toward providing the use of wood as an industrial energy source. This paper will present an overview of these programs with an emphasis...

  2. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    ) INFORM: Integrated Forecast and Reservoir Management System for Northern California, Aris Georgakakos PI Water Resources Institute GWRI mission is to help improve water resources management in Georgia, the US planning and management framework for Georgia. The GWRI planning tools are used to (i) determine flow

  3. Central Georgia EMC- Photovoltaic Rebate Program

    Broader source: Energy.gov [DOE]

    In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

  4. Alternative Fuels Data Center: Georgia Information

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    production facilities in Georgia, use the TransAtlas interactive mapping tool or use BioFuels Atlas to show the use and potential production of biofuels throughout the U.S. and...

  5. arXiv:1201.0642v1[astro-ph.GA]3Jan2012 Mon. Not. R. Astron. Soc. 000, 000000 (0000) Printed 4 January 2012 (MN LATEX style file v2.2)

    E-Print Network [OSTI]

    Henning, Thomas

    January 2012 (MN LATEX style file v2.2) Stochastic grain heating and mid-infrared emission in protostellar and compared with observations of a representative infrared dark cloud core. We show that stochastic heating heating of small grains is often mentioned as a primary cause of large in- frared (IR) fluxes from star

  6. arXiv:1002.0800v1[astro-ph.GA]3Feb2010 Mon. Not. R. Astron. Soc. 000, 000000 (0000) Printed 3 February 2010 (MN LATEX style file v2.2)

    E-Print Network [OSTI]

    Evans, Dan

    February 2010 (MN LATEX style file v2.2) High resolution X-ray spectroscopy and imaging of Mrk 573 Stefano Astronomico di Roma (INAF), Via Frascati 33, I-00040 Monte Porzio Catone, Italy 3 February 2010 ABSTRACT We et al. 2003; Bianchi et al. 2006). Since the NLR is also believed to be #12;2 Stefano Bianchi, et al

  7. NOTICE OF FACULTY VACANCY IN ART EDUCATION The Lamar Dodd School of Art at The University of Georgia invites applications for the

    E-Print Network [OSTI]

    Arnold, Jonathan

    NOTICE OF FACULTY VACANCY IN ART EDUCATION The Lamar Dodd School of Art at The University Education Search Committee Lamar Dodd School of Art The University of Georgia 270 River Rd. Athens, Ga in regard to both outdoor and urban activities (www.exploregeorgia.org). The Lamar Dodd School of Art

  8. Bulk modulus and specific heat of B-site doped (La{sub 0.3}Pr{sub 0.7}){sub 0.65}Ca{sub 0.35}Mn{sub 1?x}B{sub x}O{sub 3} (B=Fe, Cr, Ru, Al, Ga)

    SciTech Connect (OSTI)

    Srivastava, Archana, E-mail: archanasaran01@gmail.com [Department of Physics, Sri Sathya Sai College for Women, Bhopal-462024 (India); Thakur, Rasna; Gaur, N. K. [Department of Physics, Barkatullah University, Bhopal-462026 (India)

    2014-04-24T23:59:59.000Z

    Specific heat (C{sub p}) thermal expansion (?) and Bulk modulus (B{sub T}) of lightly doped Rare Earth manganites (La{sub 0.3}Pr{sub 0.7}){sub 0.65}Ca{sub 0.35}Mn{sub 1?x}B{sub x}O{sub 3} (B{sup 3+}?=?Fe{sup 3+},Cr{sup 3+},Ga{sup 3+},Al{sup 3+},Ru4+); (0.3Mn{sub 0.97}Fe{sub 0.03}O{sub 3} as a function of temperature (10K?T? 200K) is found to be in agreement with the published data. The trend of variation of Debye temperature with B-site cationic radius is predicted probably for the first time for the B-site doped rare earth manganites.

  9. The University of Georgia Center for Agribusiness and Economic Development

    E-Print Network [OSTI]

    Scott, Robert A.

    and Environmental Sciences An Evaluation of Direct and Indirect Economic Losses Incurred by Georgia FruitThe University of Georgia Center for Agribusiness and Economic Development College of Agricultural ............................................................................................................................................................ 3 Economic Consequences

  10. Sensible Solar Fueling Energy Revolution in Georgia | Department...

    Broader source: Energy.gov (indexed) [DOE]

    Sensible Solar Fueling Energy Revolution in Georgia Sensible Solar Fueling Energy Revolution in Georgia May 14, 2010 - 3:35pm Addthis Joshua DeLung During his recent commencement...

  11. atlanta georgia usa: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    values SECURING AMERICA'S FUTURE 12;0 1Georgia Tech Research Institute Annual Report Bennett, Gisele 9 School of Biology Atlanta, Georgia 30332-0230 USA Biology and Medicine...

  12. Georgia Tech / Honeywell 4GCNVKOG%QQRGTCVKXG$GJCXKQTHQT

    E-Print Network [OSTI]

    Georgia Tech / Honeywell 4GCNVKOG%QQRGTCVKXG$GJCXKQTHQT 6CEVKECN/QDKNG4QDQV6GCOU and #12;Georgia Tech / Honeywell 6GEJPQNQI[6JTWUV#TGCU 3 Fault-tolerant reactive group behaviors 3 Communication analysis and management #12;Georgia Tech / Honeywell /KUUKQP.CD Problem Statement ­ Constructing robot

  13. Comparison of Georgia and US Per Capita Fruit, Vegetable, Livestock, and Poultry Consumption, 2011 Estimated 2011 Georgia

    E-Print Network [OSTI]

    Scott, Robert A.

    Comparison of Georgia and US Per Capita Fruit, Vegetable, Livestock, and Poultry Consumption, 2011 Capita) Data System 4 Value= Per capita consumption (column 3) multiplied by Georgia Population (9 Estimated 2011 Georgia Population (9,687,653)1 2011 Farm Gate Production (lbs)2 2010 Per Capita US

  14. Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism

    E-Print Network [OSTI]

    Stone, P.R.

    2009-01-01T23:59:59.000Z

    Dependence of T C on x for II-PLM grown Ga 1-x Mn x P and Gapulsed laser melting (II-PLM) . Briefly, Ga 1-x Mn x As wasfilms 4 . Importantly, the II- PLM process results in no

  15. Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualPropertyd8c-a9ae-f8521cbb8489InformationFrenchtown,JumpValleyTopicsGeorgia/WindGeorgia:

  16. Georgia Power- Residential Solar and Heat Pump Water Heater Rebate (Georgia)

    Broader source: Energy.gov [DOE]

    Georgia Power customers may be eligible for rebates up to $250 each toward the installation costs of a 50 gallon or greater solar water heater or heat pump water heater. The solar water heater or...

  17. Georgia Southern University Business and Finance

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Business and Finance Organization Chart 2013-2014 FINAL: September 18, 2013 R:\\Work\\Common\\Org Charts\\Rev2014\\ Business & Finance Produced: Strategic Research & Analysis/KBM President Vice President for Business and Finance Associate Vice President for Finance Associate Vice

  18. Georgia Tech Profiling Overconsolidation Ratio in

    E-Print Network [OSTI]

    Mayne, Paul W.

    Properties: M = 6 sin'/(3-sin') ' = effective stress friction angle Cc = compression index Cs = swelling index . 1 ­ Cs/Cc IR = G/su = Undrained Rigidity Index G = shear modulus su = undrained shear strength vovot I qM OCR #12;Georgia Tech Determine Undrained Rigidity Index = shear stress= shear stress ss

  19. IEEE Energy2030 Atlanta, Georgia, USA

    E-Print Network [OSTI]

    Ratnasamy, Sylvia

    an innovative electric power architecture, rooted in lessons learned from the Internet and microgrids, whichIEEE Energy2030 Atlanta, Georgia, USA 17-18 November 2008 An Architecture for Local Energy-disruptive incremental adoption. Such a system, which we term a "LoCal" grid, is controlled by intelligent power switches

  20. The University of Georgia Senior Vice President

    E-Print Network [OSTI]

    Arnold, Jonathan

    directly to the Senior Vice President. In Summer 2011--in response to the recent development to the University of Georgia). These factors included, among others: decreasing state support; increased demands historic campus; and hiring, retention, compression and morale issues compounded by the inability

  1. The University of Georgia Teaching Academy

    E-Print Network [OSTI]

    Arnold, Jonathan

    The University of Georgia Teaching Academy Mission Statement The mission of the Academy is to promote and celebrate excellence in teaching and to foster learning through inquiry. Goals The Academy Engineering David S. Williams, Honors Program Teaching Academy Induction Dinner and Ceremony Membership Class

  2. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    and Wildlife Service. GWRI also has a significant international involvement in Europe, Africa, China, and South-based Hydrologic Forecasts, Aris Georgakakos PI, Georgia Institute of Technology, sponsored by NOAA OGP Climate graduate education, applied research, and technology transfer in the areas of water, energy

  3. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    associations. At the national level, GWRI collaborative efforts with the California Energy Commission program in Europe, Africa, China, Middle East, and South America with support from the U.S. Agency of Georgia, sponsored by USGS under grant #1266663 (Fund R7113). (5) Operational Multi-scale Forecast

  4. Suppression of g phase in Ni38Co12Mn41Sn9 alloy by melt spinning and its effect on martensitic transformation and magnetic properties

    E-Print Network [OSTI]

    Zheng, Yufeng

    Ni43Co7Mn39Sn11 alloy fabricated by spark plasma sintering (SPS) [3]. In NiMnSn, NiMnGa and Ni by spark plasma sintering [3]. The g phase usually deteriorates shape memory effect due to its impediment

  5. Electronic states and cyclotron resonance in n-type InMnAs G. D. Sanders, Y. Sun, F. V. Kyrychenko, and C. J. Stanton

    E-Print Network [OSTI]

    Kono, Junichiro

    and their heterostructures with AlGaSb, the first grown III-V magnetic semiconductor,1,5,6 serve as a prototype s : 75.50.Pp, 78.20.Ls, 78.40.Fy I. INTRODUCTION Recently, there has been much interest in III-V magnetic semiconductors such as InMnAs Ref. 1 and GaMnAs Ref. 2 . The ferromagnetic exchange coupling between Mn ions

  6. Seth Marder Title: Regent's Professor, Georgia Power Chair in Energy Efficiency

    E-Print Network [OSTI]

    Garmestani, Hamid

    Seth Marder Title: Regent's Professor, Georgia Power Chair in Energy Efficiency University's Professor, the Georgia Power Chair of Energy Efficiency, and Professor of Chemistry and Materials Science

  7. Georgia Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Act State Memo Georgia has substantial natural resources, including biomass and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  8. Central Georgia EMC- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes.  This year,...

  9. GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GEORGIA TECH ENERGY AND SUSTAINABILITY SERVICES (GTESS) ANSI-Accredited Standards Developer Clarification of Intent: SEP energy management standards Administrator: Holly Grell-Lawe...

  10. atlanta georgia metropolitan: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of 2004. Five notable plumes of SO2, apparently from coal-fired power plants, were Weber, Rodney 12 ACI Spring Convention Atlanta Georgia Engineering Websites Summary:...

  11. EA-1963: Elba Liquefaction Project, Savannah, Georgia

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERC’s eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

  12. The Gerontology Institute at Georgia State University invites applications for

    E-Print Network [OSTI]

    Arnold, Jonathan

    to external funding. Georgia State University is the Southeast's leading urban research institution. More thanThe Gerontology Institute at Georgia State University invites applications for a tenure. This position is affiliated with the University's Partnership in Urban Health Research (http

  13. URBAN/INDUSTRIAL LAND PRIVATIZATION The Republic of Georgia

    E-Print Network [OSTI]

    Onsrud, Harlan J.

    reviewed overall market reform prospects in the Republic of Georgia. The findings indicate that Georgia's market reform lags behind several other New Independent State (NIS) countries. This is largely due' support for market reform initiatives. With the ethnic conflict under control, the USAID assessment team

  14. Strain-induced modification in the magnetic properties of Mn{sub 5}Ge{sub 3} thin films

    SciTech Connect (OSTI)

    Dung, Dang Duc [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of) [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Odkhuu, Dorj; Cheol Hong, Soon; Cho, Sunglae [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of)] [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Thanh Vinh, Le [Aix Marseille Université, CNRS, CINaM-UMR 7325, 13288 Marseille (France)] [Aix Marseille Université, CNRS, CINaM-UMR 7325, 13288 Marseille (France)

    2013-08-21T23:59:59.000Z

    Epitaxial ferromagnetic Mn{sub 5}Ge{sub 3} thin films were stabilized on GaSb(001) and GaAs(001) substrates using molecular beam epitaxy. Compared to bulk Mn{sub 5}Ge{sub 3} materials, an enhancement of the Curie temperature above 350 K and about 320 K was observed for Mn{sub 5}Ge{sub 3}/GaAs(001) and Mn{sub 5}Ge{sub 3}/GaSb(001) heterostructures, respectively. The magnetization was found to decrease from 323 to 245 emu/cm{sup 3} for films grown on GaSb(001) and GaAs(001). Anomalous Hall effect measurements provide evidence of the strain-induced large spin polarization from density-functional study. Furthermore, our calculated results in bulk Mn{sub 5}Ge{sub 3} under strain indicate that the strain is the origin of different physical properties of Mn{sub 5}Ge{sub 3} grown on different substrates.

  15. Investigations of the electronic and magnetic structures of Co{sub 2}YGa (Y=Cr, Mn) Heusler alloys and their (100) surfaces

    SciTech Connect (OSTI)

    Hamad, Bothina, E-mail: b.hamad@ju.edu.jo [Physics Department, The University of Jordan, Amman-11942 (Jordan)

    2014-03-21T23:59:59.000Z

    Density functional theory calculations are performed to investigate the structural, electronic, and magnetic properties of bulk structures of Co{sub 2}YGa (Y?=?Cr, Mn) Heusler alloys and the surfaces along the (100) orientation. The bulk structures of both alloys show a ferromagnetic behavior with total magnetic moments of 3.03?{sub B} and 4.09?{sub B} and high spin polarizations of 99% and 67% for Co{sub 2}CrGa and Co{sub 2}MnGa, respectively. The surfaces are found to exhibit corrugations due to different relaxations of the surface atoms. For the case of Co{sub 2}CrGa, two surfaces preserve the half metallicity, namely those with Cr-Ga and Ga– terminations with high spin polarizations above 90%, whereas it dropped to about 50% for the other surfaces. However, the spin polarizations of Co-Co and Mn-Ga terminated surfaces remain close to that of bulk Co{sub 2}MnGa alloy, whereas it is suppressed down to 17% for Co– termination. The highest local magnetic moments are found to be 3.26??{sub B} and 4.11??{sub B} for Cr and Mn surface atoms in Cr-Ga and Mn– terminated surfaces, respectively.

  16. Energy Incentive Programs, Georgia | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the YouTube|6721 Federal RegisterHydrogenDistributionFact SheetColoradoGeorgia Energy

  17. Gordon, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation, search OpenEI ReferenceJump to: navigation, searchGoodyear, Arizona:Georgia:

  18. Ailey, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapersWindeySanta2004) |Agawam,Ahmeek, Michigan:County,Ailey, Georgia:

  19. Categorical Exclusion Determinations: Georgia | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO OverviewAttachments EnergyFebruary3 Categorical ExclusionCalifornia|Georgia Categorical

  20. Abbeville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcat 1AMEE Jump to: navigation, search40Georgia: Energy Resources

  1. Panthersville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall,Missouri:EnergyOssian, NewPalisades Park,Panthersville, Georgia: Energy

  2. Dunwoody, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOE FacilityDimondale,South, New Jersey:JumpOregon: EnergyDunnDunwoody, Georgia:

  3. Milton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville, Ohio:Menomonee|Mililani Town,Millinocket,Milo, Maine: EnergyGeorgia:

  4. Tucker, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTri Global Energy LLC Place: Dallas, Texas Zip:HillsTucker, Georgia: Energy

  5. Americus, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcat Place:Alvan Blanch GreenAmerenSamoa: EnergyAWSAmericus, Georgia:

  6. GEORGIA GENERAL ASSEMBLY 4/2010

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbell isOklahoma City,GENERAL TERMS &GEORGIA

  7. Rochelle, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to: navigation,MazeOhio: EnergyTennessee:Rochelle, Georgia: Energy

  8. Roswell, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to:Roscommon County, Michigan: EnergyRosendaleRossie,Roswell, Georgia:

  9. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN

  10. (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties

    SciTech Connect (OSTI)

    Bouravleuv, A. D., E-mail: bour@mail.ioffe.ru; Nevedomskii, V. N. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Ubyivovk, E. V. [St. Petersburg State University (Russian Federation)] [St. Petersburg State University (Russian Federation); Sapega, V. F. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Khrebtov, A. I. [St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation)] [St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation); Samsonenko, Yu. B.; Cirlin, G. E.; Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-08-15T23:59:59.000Z

    Self-assembled (In,Mn)As quantum dots are synthesized by molecular-beam epitaxy on GaAs (001) substrates. The experimental results obtained by transmission electron microscopy show that doping of the central part of the quantum dots with Mn does not bring about the formation of structural defects. The optical properties of the samples, including those in external magnetic fields, are studied.

  11. Georgia: Data Center and Historic Municipal Building Go Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Municipal Building Go Green Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can consume 100 to 200 times more...

  12. EECBG Success Story: Georgia County Turning Industrial and Farm...

    Broader source: Energy.gov (indexed) [DOE]

    Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook EECBG Success Story: Atlanta Suburb Greases the Path to Savings...

  13. Agricultural Zoning as a Farmland Protection Tool in Georgia

    E-Print Network [OSTI]

    Rosemond, Amy Daum

    Agricultural Zoning as a Farmland Protection Tool in Georgia Prepared by: Emily Franzen, Staff Attorney UGA River Basin Center 706-583-0282 emilyf@uga.edu Table of Contents Introduction to Agricultural Exclusive Agricultural Zoning

  14. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...

    Broader source: Energy.gov (indexed) [DOE]

    D.C. - U.S. Secretary of Energy Secretary Steven Chu will visit the Vogtle nuclear power plant in Waynesboro, Georgia, and Oak Ridge National Laboratory on Wednesday,...

  15. Jackson EMC- Residential Energy Efficiency Rebate Program (Georgia)

    Broader source: Energy.gov [DOE]

    Jackson Electric Membership Corporation (EMC) is an electric cooperative that serves 194,000 customers in 10 counties in northeast Georgia. To encourage its residential customers to adopt energy...

  16. U.S. Hydropower Resource Assessment - Georgia

    SciTech Connect (OSTI)

    A. M. Conner; B. N. Rinehart; J. E. Francfort

    1998-10-01T23:59:59.000Z

    The U.S. Department of Energy is developing an estimate of the undeveloped hydropower potential in the United States. For this purpose, the Idaho National Engineering and Environmental Laboratory developed a computer model called Hydropower Evaluation Software (HES). HES measures the undeveloped hydropower resources available in the United States, using uniform criteria for measurement. The software was developed and tested using hydropower information and data provided by the Southwestern Power Administration. It is a menu-driven program that allows the personal computer user to assign environmental attributes to potential hydropower sites, calculate development suitability factors for each site based on the environmental attributes present, and generate reports based on these suitability factors. This report describes the resource assessment results for the State of Georgia.

  17. Sustaining School Reform: Lessons from Georgia Education Policy and Evaluation Center, College of Education, University of Georgia

    E-Print Network [OSTI]

    Scott, Robert A.

    Sustaining School Reform: Lessons from Georgia Education Policy and Evaluation Center, College addressing lessons learned from two years of evaluation of Comprehensive School Reform (CSR) grant recipients implementing reform initiatives, in general. Background The Comprehensive School Reform (CSR) Program began

  18. DYNAMICAL PROPERTIES OF Ni 2 MnGa DETERMINED FROM

    E-Print Network [OSTI]

    Entel, P.

    , Germany b Physics Department, Chelyabinsk State University, 454021 Chelyabinsk, Russia (Phase Transitions

  19. A GINZBURG-LANDAU THEORY FOR Ni-Mn-Ga

    E-Print Network [OSTI]

    Entel, P.

    Tieftemperaturphysik, Gerhard-Mercator-Universit¨at, 47048 Duisburg, Germany b Physics Department, Chelyabinsk State University, 454021 Chelyabinsk, Russia (Received ...) Abstract We present an effective Ginzburg-Landau theory

  20. Isovalent Anion Substitution in Ga-Mn-pnictide Ferromagnetic Semiconductors

    E-Print Network [OSTI]

    Stone, Peter

    2010-01-01T23:59:59.000Z

    a so-called diluted magnetic semiconductor (DMS). DMSs arein heavily doped magnetic semiconductors as the probabilitythis method to magnetic semiconductors, the 6×6 k·p matrix

  1. Isovalent Anion Substitution in Ga-Mn-pnictide Ferromagnetic Semiconductors

    E-Print Network [OSTI]

    Stone, Peter

    2010-01-01T23:59:59.000Z

    Flow chart illustrating the process by which M(H) curves are calculated by the free energyFlow chart illustrating the process by which M(H) curves are calculated by the free energy

  2. Isovalent Anion Substitution in Ga-Mn-pnictide Ferromagnetic Semiconductors

    E-Print Network [OSTI]

    Stone, Peter

    2010-01-01T23:59:59.000Z

    63. O. Madelung, Semiconductors - Basic Data, 2nd Ed. (in Laser Annealing of Semiconductors, edited by J. M. PoateProperties of Semiconductors ("Atom" Publ. House, Moscow,

  3. Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors

    E-Print Network [OSTI]

    Sinova, Jairo; Jungwirth, T.; Liu, X.; Sasaki, Y.; Furdyna, JK; Atkinson, WA; MacDonald, AH.

    2004-01-01T23:59:59.000Z

    - ?As ferromagnetic semiconductors Furdyna,4,3 W. A. Atkinson,5 and A. H. MacDonald3 y, College Station, Texas 77843-4242, USA a? 10, 162 53 Praha 6, Czech Republic at Austin, Austin, Texas 78712-0264, USA Dame, Notre Dame, Indiana 46556, USA y...-quality samples, due to the coupling of the d-level local moments to 5 Donald, Phys. Rev. B 66, 012402 ~2002!; K.W. Edmonds, K.Y. Wang, R.P. Campion, A.C. Neumann, C.T. Foxon, B.L. Gal- lagher, and P.C. Main, Appl. Phys. Lett. 81, 3010 ~2002!. 8 and A. Fert...

  4. Crystallographic, magnetic, and electronic structures of ferromagnetic shape memory alloys Ni{sub 2}XGa (X=Mn,Fe,Co) from first-principles calculations

    SciTech Connect (OSTI)

    Bai, J. [Key Laboratory for Anisotropy and Texture of Materials (MOE), Northeastern University, 110004 Shenyang (China); LETAM, CNRS FRE 3143 (former UMR 7078), University of Metz, 57045 Metz (France); Raulot, J. M.; Zhang, Y. D.; Esling, C. [LETAM, CNRS FRE 3143 (former UMR 7078), University of Metz, 57045 Metz (France); Zhao, X.; Zuo, L. [Key Laboratory for Anisotropy and Texture of Materials (MOE), Northeastern University, 110004 Shenyang (China)

    2011-01-01T23:59:59.000Z

    The crystallographic, magnetic and electronic structures of the ferromagnetic shape memory alloys Ni{sub 2}XGa (X=Mn, Fe, and Co), are systematically investigated by means of the first-principles calculations within the framework of density functional theory using the VIENNA AB INITIO SOFTWARE PACKAGE. The lattice parameters of both austenitic and martensitic phases in Ni{sub 2}MnGa have been calculated. The formation energies of the cubic phase of Ni{sub 2}XGa are estimated, and show a destabilization tendency if Mn atom is substituted by Fe or Co. From Ni{sub 2}MnGa to Ni{sub 2}CoGa, the down spin total density of states (DOS) at Fermi level is gradually increasing, whereas that of the up spin part remains almost unchanged. This is the main origin of the difference of the magnetic moment in these alloys. The partial DOS is dominated by the Ni and Mn 3d states in the bonding region below E{sub F}. There are two bond types existing in Ni{sub 2}XGa: one is between neighboring Ni atoms in Ni{sub 2}MnGa; the other is between Ni and X atoms in Ni{sub 2}FeGa and Ni{sub 2}CoGa alloys.

  5. US SoAtl GA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    household (2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to...

  6. State of Georgia CERTIFICATE OF EXEMPTION OF LOCAL HOTEL/MOTEL EXCISE TAX

    E-Print Network [OSTI]

    Teskey, Robert O.

    AND MOTEL OPERATORS: Effective April 2, 1987, Act Number 621 amending Official Code of Georgia Annotated for exemption of the local hotel/motel excise tax under Official Code of Georgia Annotated Chapter 48-13 (as Section 48-13-51 provides that Georgia state or local government officials or employees traveling

  7. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N- GaN built-in junctions in the n-GaN layer for InGaN/GaN: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN

  8. Jefferson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtelInterias SolarJane Capital PartnersGeorgia: EnergyGeorgia: Energy

  9. POLICY REGARDING SERVICE ANIMAL ACCESS TO UNIVERSITY OF GEORGIA FACILITIES,

    E-Print Network [OSTI]

    Arnold, Jonathan

    POLICY REGARDING SERVICE ANIMAL ACCESS TO UNIVERSITY OF GEORGIA FACILITIES, PROGRAMS, SERVICES AND ACTIVITIES This policy ("Policy") is to implement federal and state laws regarding access for service animals, for purposes of this Policy, "Service Animals" are collectively defined to include those that are defined

  10. Shipping and Receiving Dangerous Goods at Georgia Tech

    E-Print Network [OSTI]

    Shipping and Receiving Dangerous Goods at Georgia Tech Contacts: Biological Shipments: Shane://industry.gatech.edu/researchers/forms) GENERAL: The transportation of dangerous goods is regulated by a number of national and international of Dangerous Goods (Flash). PROCESS: 1) All shipments must have a Document Id number as well as a People

  11. Ambient habitat noise and vibration at the Georgia Aquarium

    E-Print Network [OSTI]

    Johnson, Michael T.

    Ambient habitat noise and vibration at the Georgia Aquarium P. M. Scheifele Department significant levels of background noise due to pumps and motors. This noise, together with pool architecture to quantify the ambient noise levels in the water from machine vibration and from in-air performance speaker

  12. Pulp and Paper Corrosion Symposium Georgia Tech Renewable Bioproducts Institute

    E-Print Network [OSTI]

    Das, Suman

    1 Pulp and Paper Corrosion Symposium Georgia Tech Renewable Bioproducts Institute November 2014 Digester Corrosion Margaret Gorog Federal Way, WA 2 · Chips plus a mixture of white and black liquor · The pulp is then blown from the bottom of the vessel into a blow tank · Corrosion occurs during filling

  13. School of Earth and Atmospheric Sciences Georgia Institute of Technology

    E-Print Network [OSTI]

    Weber, Rodney

    School of Earth and Atmospheric Sciences Georgia Institute of Technology Strategic Plan March 1 opportunities. Vision The vision of the School of Earth and Atmospheric Sciences is: To lead in innovative research and educate the future leaders in earth and atmospheric sciences for the 21st century, within

  14. GEORGIA TECH RESEARCH CORPORATION SPECIALIZED TESTING SERVICES AGREEMENT

    E-Print Network [OSTI]

    GEORGIA TECH RESEARCH CORPORATION SPECIALIZED TESTING SERVICES AGREEMENT Project No Members"). Section 2. Payment; Fixed Price Amount. 2.1 COMPANY agrees to pay GTRC $______ ("Fixed Price%) of the Fixed Price Amount to GTRC upon signing this Agreement. The advance payment will be applied against

  15. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jamer, M. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics; Sterbinsky, G. [Brookhaven National Laboratory (BNL), Upton, NY (United States). Photon Sciences Directorate; Assaf, B. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics; Arena, D. [Brookhaven National Laboratory (BNL), Upton, NY (United States). Photon Sciences Directorate; Heiman, D. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics

    2014-12-07T23:59:59.000Z

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value. (auth)

  16. Li (Lily) Wang Address: 223 Statistics Building, University of Georgia, Athens, GA 30602-7952

    E-Print Network [OSTI]

    Wang, Lily

    ). A nonparametric analysis on the environmental Kuznets curve. Environmetrics, 22(3), 420­430. [9] Liu, X., Wang, L

  17. University of Georgia College of Agricultural and Environmental Sciences Alumni Association 2012 Nomination Form

    E-Print Network [OSTI]

    Arnold, Jonathan

    University of Georgia College of Agricultural and Environmental Sciences Alumni Association 2012 in the College of Agricultural and Environmental Sciences Activity Center. To be displayed in an attractive

  18. adults georgia 2006-2007: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology, automatically supersede the contents of this manual. A GTA is a temporary Bennett, Gisele 3 Georgia Tech : Catalog 2006 2007 : Home 2006 -2007 General Catalog...

  19. Coweta-Fayette EMC- Residential Solar Water Heater Rebate Program (Georgia)

    Broader source: Energy.gov [DOE]

    Coweta-Fayette Electric Membership Corporation (EMC) provides electric and natural gas service to 58,000 customers in Georgia's Coweta, Fayette, Meriwether, Heard, Troop and Fulton counties.

  20. Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    temperature opening new perspective on magnetic refrigeration technology for everyday use. martino on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow and magnetic prop- erties. In particular, the irradiated film keeps the giant magnetocaloric effect at room

  1. EcoCAR Challenge Georgia Institute of Technology

    E-Print Network [OSTI]

    Houston, Paul L.

    =rss&utm_source=feedburner&utm_medium=feed&utm_ca mpaign=Feed%3A+fastcompany%2Fheadlines+%28Fast+Company+H eadlines%29 October (10) BNET http://www.bnet.com/blog/electric-cars-formula-racing/ Green Beat http://venturebeat.com/2010/10/07/bad-news-for-electric-cars-people- dont-understand- them1 EcoCAR Challenge Georgia Institute of Technology Outreach Report - Appendix Date: 11/09/2010 #12

  2. Case Study: Georgia-Pacific Reduces Outside Fuel Costs and Increases Process Efficiency with Insulation Upgrade Program

    E-Print Network [OSTI]

    Jackson, D.

    A Georgia-Pacific plywood plant located in Madison, Georgia recently decided to insulate their steam lines for energy conservation, improved process efficiency and personnel protection. The goal of the project was to eliminate dependency...

  3. Assistant Professor of Gerontology The Gerontology Institute at Georgia State University invites applications for a tenure-track assistant

    E-Print Network [OSTI]

    Arnold, Jonathan

    lead to external funding. Georgia State University is the Southeast's leading urban researchAssistant Professor of Gerontology The Gerontology Institute at Georgia State University invites faculty representing numerous disciplines across the University. Further information about the Gerontology

  4. Valence-state Model of Strain-dependent Mn L2,3 X-ray Magnetic Circular Dichroism from Ferromagnetic Semiconductors

    SciTech Connect (OSTI)

    van der Laan, G.; Edmonds, K. W.; Arenholz, E.; Farley, N. R. S.; Gallagher, B. L.

    2010-03-30T23:59:59.000Z

    We present a valence-state model to explain the characteristics of a recently observed pre-edge feature in Mn L{sub 3} x-ray magnetic circular dichroism (XMCD) of ferromagnetic (Ga,Mn)As and (Al,Ga,Mn)As thin films. The prepeak XMCD shows a uniaxial anisotropy, contrary to the cubic symmetry of the main structures induced by the crystalline electric field. Reversing the strain in the host lattice reverses the sign of the uniaxial anisotropy. With increasing carrier localization, the prepeak height increases, indicating an increasing 3d character of the hybridized holes. Hence, the feature is ascribed to transitions from the Mn 2p core level to unoccupied p-d hybridized valence states. The characteristics of the prepeak are readily reproduced by the model calculation taking into account the symmetry of the strain-, spin-orbit-, and exchange-split valence states around the zone center.

  5. Electronic Structure and Lattice Dynamics of the Magnetic Shape Memory Alloy Co2NiGa

    SciTech Connect (OSTI)

    Siewert, M.; Shapiro, S.; Gruner, M.E.; Dannenberg, A.; Hucht, A.; Xu, G.; Schlagel, D.L.; Lograsso, T.A.; Entel1, P.

    2010-08-20T23:59:59.000Z

    In addition to the prototypical Ni-Mn-based Heusler alloys, the Co-Ni-Ga systems have recently been suggested as another prospective materials class for magnetic shape-memory applications. We provide a characterization of the dynamical properties of this material and their relation to the electronic structure within a combined experimental and theoretical approach. This relies on inelastic neutron scattering to obtain the phonon dispersion while first-principles calculations provide the link between dynamical properties and electronic structure. In contrast to Ni{sub 2}MnGa, where the softening of the TA{sub 2} phonon branch is related to Fermi-surface nesting, our results reveal that the respective anomalies are absent in Co-Ni-Ga, in the phonon dispersions as well as in the electronic structure.

  6. Archway Education Professional The University of Georgia is seeking a qualified candidate to serve as the Archway Education Professional in

    E-Print Network [OSTI]

    Arnold, Jonathan

    Archway Education Professional The University of Georgia is seeking a qualified candidate to serve as the Archway Education Professional in Dalton-Whitfield County, Georgia. The Archway Partnership was initiated with the University of Georgia. The Archway Education Professional is a UGA Public Service (Public Service Assistant

  7. EcoCAR by Georgia Tech efficiency through design and innovation

    E-Print Network [OSTI]

    Houston, Paul L.

    engineering competition sponsored by the Department of Energy and General Motors EcoCAR by Georgia Tech engineering competition sponsored by the Department of Energy and General Motors #12;GT EcoCAR GOALS: Increase by the Department of Energy and General Motors EcoCAR by Georgia Tech efficiency through design and innovation

  8. POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition in Licensing

    E-Print Network [OSTI]

    Arnold, Jonathan

    POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition the interests of the company over their responsibilities to UGARF and the University of Georgia. This Policy with this Policy. II. Policy In the course of intellectual property licensing, UGARF, through the work of TCO, may

  9. University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program

    E-Print Network [OSTI]

    Arnold, Jonathan

    University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program Program Description As part of the University of Georgia (UGA) / University of Liverpool Partnership, we are providing for ongoing sponsored funding to continue the collaborations. Eligibility Criteria To be eligible

  10. Efficiency of Surveying, Baiting, and Trapping Wild Pigs at Fort Benning, Georgia Brian Lee Williams

    E-Print Network [OSTI]

    Ditchkoff, Steve

    Efficiency of Surveying, Baiting, and Trapping Wild Pigs at Fort Benning, Georgia by Brian Lee surveys, trapping efficiency, Fort Benning Copyright 2010 by Brian Lee Williams Approved by Stephen S This study, conducted at Fort Benning, Georgia, sought to develop more efficient ways of surveying

  11. INTRODUCTION TO SMART GRID Weichao Wang (UNCC), Yi Pan (Georgia State),

    E-Print Network [OSTI]

    Wang, Weichao

    INTRODUCTION TO SMART GRID Weichao Wang (UNCC), Yi Pan (Georgia State), Wenzhan Song (Georgia State) and Le Xie (Texas A&M) NSF SFS Project Team on "Integrated Learning Environment for Smart Grid Security" #12; Objective of National Power Grid Modernization Architecture of Smart Grid What is Smart Grid

  12. Growth optimization and structural analysis for ferromagnetic Mn-doped ZnO layers deposited by radio frequency magnetron sputtering

    SciTech Connect (OSTI)

    Abouzaid, M.; Ruterana, P.; Liu, C.; Morkoc, H. [SIFCOM UMR 6176 CNRS-ENSICAEN, 6 Boulevard du Marechal Juin, 14050 Caen Cedex (France); Department of Electrical Engineering, Virginia Commonwealth University, Richmond Virginia 23284 (United States)

    2006-06-01T23:59:59.000Z

    The effect of the deposition temperature on the crystalline quality of (Zn,Mn)O is investigated in thin films prepared by radio frequency magnetron sputtering on c-plane sapphire and GaN substrates. The layers are made of a 0.5 {mu}m Mn-doped layer towards the surface on top of a 150 nm pure ZnO buffer. Depending on the deposition temperature, the layers can exhibit a columnar structure; the adjacent domains are rotated from one another by 90 deg. , putting [1010] and [1120] directions face to face. At high Mn concentration the columnar structure is blurred by the formation of Mn rich precipitates. Only one variety of domains is observed at an optimal deposition temperature of 500 deg. C: they are slightly rotated around the [0001] axis (mosaic growth) and bounded by threading dislocations.

  13. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer

  14. Highly Active Yeast MnSOD has a Novel Mechanism Involving Six-coordinate Mn(3+) Species

    E-Print Network [OSTI]

    Sheng, Yuewei

    2012-01-01T23:59:59.000Z

    2009) Functional roles of the tetramer organization of malicGrez, M. (2010) Dimer-tetramer transition controls RUNX1/ETOdimer, Å) Mn•••Mn (A/C, tetramer, Å) Mn•••Mn (A/D, tetramer,

  15. Structure and magnetic properties of rf thermally plasma synthesized Mn and MnZn ferrite nanoparticles

    E-Print Network [OSTI]

    McHenry, Michael E.

    Structure and magnetic properties of rf thermally plasma synthesized Mn and Mn­Zn ferrite has previously been shown to be a viable route to producing nanocrystalline magnetite and Ni ferrite nanoparticles. In this work nanocrystalline powders of Mn and Mn­Zn ferrites have been synthesized using a 50 k

  16. Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures

    E-Print Network [OSTI]

    Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP September 2007 Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing

  17. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    SciTech Connect (OSTI)

    Jamer, M. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics; Sterbinsky, G. [Brookhaven National Laboratory (BNL), Upton, NY (United States). Photon Sciences Directorate; Assaf, B. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics; Arena, D. [Brookhaven National Laboratory (BNL), Upton, NY (United States). Photon Sciences Directorate; Heiman, D. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics

    2014-12-07T23:59:59.000Z

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value. (auth)

  18. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  19. Lee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:Landowners and Wind EnergyIndiana: EnergyLands inLechee,Georgia: Energy

  20. Liberty County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:Landowners and Wind EnergyIndiana:NewJumpLiberia: Energy ResourcesGeorgia:

  1. Macon County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:LandownersLuther, Oklahoma:EnergyECO AugerMaanGeorgia: Energy Resources Jump

  2. Madison County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  3. Georgia/Wind Resources/Full Version | Open Energy Information

    Open Energy Info (EERE)

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  4. Burke County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  5. Calhoun County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  6. Lighting Up Georgia Convenience Stores | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  7. Carroll County, Georgia: Energy Resources | Open Energy Information

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  8. City of Covington, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

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  9. Sandy Springs, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  10. Georgia: Data Center and Historic Municipal Building Go Green | Department

    Energy Savers [EERE]

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  11. Jeff Davis County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  12. Harris County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  13. Heard County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG|Information OpenEIHas BeenLegalHeard County, Georgia: Energy

  14. Worth County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  15. Pine Lake, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal PwerPerkins County, Nebraska: Energy ResourcesPicketGeothermal ProjectLake, Georgia: Energy

  16. Pine Mountain, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  17. Georgia: Data Center and Historic Municipal Building Go Green | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdf Flash2006-52.pdf0.pdfDepartmentCounsel Law Studentof Energy Georgia: Data Center

  18. Central Georgia El Member Corp | Open Energy Information

    Open Energy Info (EERE)

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  19. City of Barnesville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

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  20. City of East Point, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof EnergyInnovationin Urban Transport |CityCity of Dayton,City of East Point, Georgia

  1. Georgia Department of Natural Resources (GDNR) | Open Energy Information

    Open Energy Info (EERE)

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  2. Greene County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG ContractingGreenOrder Jump to:Greenburgh, New York:Georgia: Energy

  3. Gwinnett County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG| Open EnergyGuntersville Electric BoardGwinnett County, Georgia:

  4. Stephens County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  5. Stone Mountain, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  6. Echols County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazel Crest, Illinois: EnergyEastport, Maine:Eau ClaireEchols County, Georgia:

  7. Effingham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOEHazel Crest, Illinois:Edinburgh University aka WaveKansas:New York:Georgia:

  8. Oconee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall,Missouri: EnergyExcellence SeedNunn,andOasysOchiltree County, Texas:Georgia:

  9. Marion County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  10. Miller County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  11. Mitchell County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  12. Crisp County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  13. Decatur County, Georgia: Energy Resources | Open Energy Information

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  14. Thomas County, Georgia: Energy Resources | Open Energy Information

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  15. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  16. Middle Georgia El Member Corp | Open Energy Information

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  17. Atkinson County, Georgia: Energy Resources | Open Energy Information

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  18. Workplace Charging Challenge Partner: Georgia Institute of Technology |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: SinceDevelopment | Department ofPartnershipsAngieTerriDepartmentDepartment of Energy Georgia

  19. City of Monroe, Georgia (Utility Company) | Open Energy Information

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  20. Morgan County, Georgia: Energy Resources | Open Energy Information

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  1. Mountain Park, Georgia: Energy Resources | Open Energy Information

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  2. Bacon County, Georgia: Energy Resources | Open Energy Information

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  3. Baker County, Georgia: Energy Resources | Open Energy Information

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  4. Baldwin County, Georgia: Energy Resources | Open Energy Information

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  5. Barrow County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  6. Bartow County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  7. Bleckley County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  8. Quitman County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  9. Randolph County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  10. Rockdale County, Georgia: Energy Resources | Open Energy Information

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  11. Floyd County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  12. Franklin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  13. Georgia's 10th congressional district: Energy Resources | Open Energy

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  14. Georgia's 11st congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

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  15. Georgia's 11th congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

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  16. Georgia's 12th congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

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  17. Georgia's 13th congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump1946865°,Park,2005) | OpenInformation Georgia'sInformation

  18. Twiggs County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown of Ladoga, IndianaTurtle Airships Jump to:Twiggs County, Georgia: Energy

  19. Clarke County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformation SmyrnaNew York: EnergyWashington: Energy Resources3Georgia:

  20. Clinch County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformation SmyrnaNewClayClearSpotYork:TrustClinch County, Georgia:

  1. Coffee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew York: EnergyCoeur d Alene Fiber Fuels Inc akaGeorgia:

  2. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  3. GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

    SciTech Connect (OSTI)

    Keshagupta, P.; Radpour, F. [Univ. of Cincinnati, OH (United States)

    1994-12-31T23:59:59.000Z

    In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

  4. Air Quality and Road Emission Results for Fort Stewart, Georgia

    SciTech Connect (OSTI)

    Kirkham, Randy R.; Driver, Crystal J.; Chamness, Mickie A.; Barfuss, Brad C.

    2004-02-02T23:59:59.000Z

    The Directorate of Public Works Environmental & Natural Resources Division (Fort Stewart /Hunter Army Airfield) contracted with the Pacific Northwest National Laboratory (PNNL) to monitor particulate matter (PM) concentrations on Fort Stewart, Georgia. The purpose of this investigation was to establish a PM sampling network using monitoring equipment typically used in U.S. Environmental Protection Agency (EPA) ''saturation sampling'', to determine air quality on the installation. In this initial study, the emphasis was on training-generated PM, not receptor PM loading. The majority of PM samples were 24-hr filter-based samples with sampling frequency ranging from every other day, to once every six days synchronized with the EPA 6th day national sampling schedule. Eight measurement sites were established and used to determine spatial variability in PM concentrations and evaluate whether fluctuations in PM appear to result from training activities and forest management practices on the installation. Data collected to date indicate the average installation PM2.5 concentration is lower than that of nearby urban Savannah, Georgia. At three sites near the installation perimeter, analyses to segregate PM concentrations by direction of air flow across the installation boundary indicate that air (below 80 ft) leaving the installation contains less PM2.5 than that entering the installation. This is reinforced by the observation that air near the ground is cleaner on average than the air at the top of the canopy.

  5. Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment

    E-Print Network [OSTI]

    Trassinelli, Martino; Eddrief, M; Etgens, V H; Gafton, V; Hidki, S; Lacaze, Emmanuelle; Lamour, Emily; Prigent, Christophe; Rozet, Jean-Pierre; Steydli, S; Zheng, Y; Vernhet, Dominique

    2014-01-01T23:59:59.000Z

    We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition with a consequent suppression of thermal hysteresis without any significant perturbation on the other structural and magnetic properties. In particular, the irradiated film keeps the giant magnetocaloric effect at room temperature opening new perspective on magnetic refrigeration technology for everyday use.

  6. Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment

    SciTech Connect (OSTI)

    Trassinelli, M., E-mail: martino.trassinelli@insp.jussieu.fr; Marangolo, M.; Eddrief, M.; Etgens, V. H.; Gafton, V.; Hidki, S.; Lacaze, E.; Lamour, E.; Prigent, C.; Rozet, J.-P.; Steydli, S.; Zheng, Y.; Vernhet, D. [CNRS, UMR 7588, Institut des NanoSciences de Paris (INSP), F-75005 Paris (France); Sorbonne Universités, UPMC Univ. Paris 06, UMR 7588, INSP, F-75005 Paris (France)

    2014-02-24T23:59:59.000Z

    We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition, with a consequent suppression of thermal hysteresis without any significant perturbation on the other structural and magnetic properties. In particular, the irradiated film keeps the giant magnetocaloric effect at room temperature opening new perspective on magnetic refrigeration technology for everyday use.

  7. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    SciTech Connect (OSTI)

    Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

    2011-12-23T23:59:59.000Z

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

  8. sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage

    SciTech Connect (OSTI)

    Waddell, Michael

    2014-09-30T23:59:59.000Z

    This study focuses on evaluating the feasibility and suitability of using the Jurassic/Triassic (J/TR) sediments of the South Georgia Rift basin (SGR) for CO2 storage in southern South Carolina and southern Georgia The SGR basin in South Carolina (SC), prior to this project, was one of the least understood rift basin along the east coast of the U.S. In the SC part of the basin there was only one well (Norris Lightsey #1) the penetrated into J/TR. Because of the scarcity of data, a scaled approach used to evaluate the feasibility of storing CO2 in the SGR basin. In the SGR basin, 240 km (~149 mi) of 2-D seismic and 2.6 km2 3-D (1 mi2) seismic data was collected, process, and interpreted in SC. In southern Georgia 81.3 km (~50.5 mi) consisting of two 2-D seismic lines were acquired, process, and interpreted. Seismic analysis revealed that the SGR basin in SC has had a very complex structural history resulting the J/TR section being highly faulted. The seismic data is southern Georgia suggest SGR basin has not gone through a complex structural history as the study area in SC. The project drilled one characterization borehole (Rizer # 1) in SC. The Rizer #1 was drilled but due to geologic problems, the project team was only able to drill to 1890 meters (6200 feet) instead of the proposed final depth 2744 meters (9002 feet). The drilling goals outlined in the original scope of work were not met. The project was only able to obtain 18 meters (59 feet) of conventional core and 106 rotary sidewall cores. All the conventional core and sidewall cores were in sandstone. We were unable to core any potential igneous caprock. Petrographic analysis of the conventional core and sidewall cores determined that the average porosity of the sedimentary material was 3.4% and the average permeability was 0.065 millidarcy. Compaction and diagenetic studies of the samples determined there would not be any porosity or permeability at depth in SC. In Georgia there appears to be porosity in the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

  9. Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation...

    Broader source: Energy.gov (indexed) [DOE]

    Ga. - Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help...

  10. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

    E-Print Network [OSTI]

    Compositionally-graded InGaAs­InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem

  11. Capacity and Energy Payments to Small Power Producers and Cogenerators Under PURPA Docket (Georgia)

    Broader source: Energy.gov [DOE]

    Docket No. 4822 was enacted by the Georgia Public Service Commission in accordance with The Public Utility Regulatory Policies Act of 1978 (PURPA) that was enacted to promote conservation and to...

  12. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia

    SciTech Connect (OSTI)

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01T23:59:59.000Z

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

  13. UMass INFORMSProfessor Anna Nagurney Dr. Garrow is an Associate Professor at the Georgia Institute of

    E-Print Network [OSTI]

    Nagurney, Anna

    at the Georgia Institute of Technology. She earned her Ph.D. at Northwestern University, with an emphasis. The study considers extensions of this methodology to Generalized Extreme Value (GEV) discrete choice models Management Models with Censored Data" " #12;

  14. Sales Tax Exemption for Energy-Efficient Products (Sales Tax Holiday) (Georgia))

    Broader source: Energy.gov [DOE]

    Georgia allows an annual state and local sales tax exemption on Energy Star products of $1,500 or less per product, purchased for non-commercial home or personal use.The 100% exemption from the...

  15. EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

  16. Why Should I Study Engineering? Georgia Southern offers three engineering disciplines Civil, Electrical and Mechanical.

    E-Print Network [OSTI]

    Hutcheon, James M.

    , Electrical and Mechanical. Engineers plan, design, develop, test and analyze infrastructure components (CivilWhy Should I Study Engineering? Georgia Southern offers three engineering disciplines ­ Civil), electronic systems (Electrical), and systems with moving parts (Mechanical) that affect and improve people

  17. GEORGIA INSTITUTE OF TECHNOLOGY COLLEGE OF ENGINEERING 1 College of Engineering

    E-Print Network [OSTI]

    Li, Mo

    Electrical and Computer Engineering Industrial and Systems Engineering Materials Science and Engineering and Biomolecular Engineering Civil and Environmental Engineering Electrical and Computer Engineering IndustrialGEORGIA INSTITUTE OF TECHNOLOGY · COLLEGE OF ENGINEERING 1 College of Engineering Aerospace

  18. Energy Conservation Recommendations, Implementation Costs, and Projected Paybacks for Georgia's Targeted Schools and Hospitals Conservation Program

    E-Print Network [OSTI]

    Brown, M. L.; Moore, D. M.

    1988-01-01T23:59:59.000Z

    During the past year the Georgia Tech Research Institute performed technical assistance studies on over 100 school and hospital buildings under a program funded by the Governor's Office of Energy Resources. This program is known as the Targeted...

  19. Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel Funds

    E-Print Network [OSTI]

    Sherrill, David

    Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel funds may be used to meet any remaining costs not covered by the research advisor, GSF award___________________________________________________ Dates of Conference_____________________________________________________ Total estimated costs

  20. GEORGIA INSTITUTE OF TECHNOLOGY FABRICATED PROPERTY REPORT Revised 07-2014

    E-Print Network [OSTI]

    Li, Mo

    GEORGIA INSTITUTE OF TECHNOLOGY FABRICATED PROPERTY REPORT Revised 07-2014 TO: Property Control: ____________________________________________ Phone: _______________ COST OF PROPERTY Materials or Component Parts $ _______________ External Labor Costs $ _______________ Transportation $ _______________ Other Costs (explain on back

  1. Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel Funds

    E-Print Network [OSTI]

    Sherrill, David

    Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel funds may be used to meet any remaining costs not covered by the research advisor, SGA award_____________________________________________________ Total estimated costs for attending conference Transportation $_______________ Other Travel

  2. Synthesis of a jojoba bean disaccharide Alexander Kornienko, Georgia Marnera, Marc d'Alarcao *

    E-Print Network [OSTI]

    d'Alarcao, Marc

    Note Synthesis of a jojoba bean disaccharide Alexander Kornienko, Georgia Marnera, Marc d 1998 Abstract A synthesis of the disaccharide recently isolated from jojoba beans, 2-O Science Ltd. All rights reserved Keywords: chiro-Inositol; Jojoba beans; Glycosylation; Synthesis

  3. Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report

    SciTech Connect (OSTI)

    SC Energy Office: Southern Alliance for Clean Energy

    2013-02-12T23:59:59.000Z

    This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

  4. State of Georgia quarterly AIP Implementation Report: October--December 1995

    SciTech Connect (OSTI)

    NONE

    1996-01-19T23:59:59.000Z

    The objective of this report is to ensure the citizens of Georgia that health, safety and the environment are being protected through existing DOE programs at the Savannah River Site (SRS), through a vigorous program of independent monitoring and oversight by Georgia officials. SRS emergency plans will be annually reviewed and updated. Environmental monitoring will be conducted of surface water and related media, ground water, air, crops, milk, drinking water, soils and vegetation.

  5. Structural And Physical Characterization of Tetranuclear [Mn**II(3)Mn**IV] And [Mn**II(2)Mn**III(2)] Valence-Isomer Manganese Complexes

    SciTech Connect (OSTI)

    Zaleski, C.M.; Weng, T.-C.; Dendrinou-Samara, C.; Alexiou, M.; Kanakaraki, P.; Hsieh, W.-Y.; Kampf, J.; Penner-Hahn, J.E.; Pecoraro, V.L.; Kessissoglou, D.P.

    2009-05-28T23:59:59.000Z

    Two tetranuclear Mn complexes with an average Mn oxidation state of +2.5 have been prepared. These valence isomers have been characterized by a combination of X-ray crystallography, X-ray absorption spectroscopy, and magnetic susceptibility. The Mn{sup II}{sub 3}Mn{sup IV} tetramer has the Mn ions arranged in a distorted tetrahedron, with an S = 6 ground spin state, dominated by ferromagnetic exchange among the manganese ions. The Mn{sup II}{sub 2}Mn{sup III}{sub 2} tetramer also has a distorted tetrahedral arrangement of Mn ions but shows magnetic behavior, suggesting that it is a single-molecule magnet. The X-ray absorption near-edge structure (XANES) spectra for the two complexes are similar, suggesting that, while Mn XANES has sufficient sensitivity to distinguish between trinuclear valence isomers (Alexiou et al. Inorg. Chem. 2003, 42, 2185), similar distinctions are difficult for tetranuclear complexes such as that found in the photosynthetic oxygen-evolving complex.

  6. Georgia Institute of Technology chilled water system evaluation and master plan

    SciTech Connect (OSTI)

    NONE

    1996-05-15T23:59:59.000Z

    As the host of the Olympic Village for the 1996 Atlanta Olympics, Georgia Tech has experienced a surge in construction activities over the last three years. Over 1.3 million square feet of new buildings have been constructed on the Georgia Tech campus. This growth has placed a strain on the Georgia Tech community and challenged the facilities support staff charged with planning and organizing utility services. In concert with Olympic construction, utility planners have worked to ensure long term benefits for Georgia Tech facilities while meeting the short term requirements of the Olympic Games. The concentration of building construction in the northwest quadrant of the campus allowed planners to construct a satellite chilled water plant to serve the needs of this area and provide the opportunity to integrate this section of the campus with the main campus chilled water system. This assessment and master plan, funded in part by the US Department of Energy, has evaluated the chilled water infrastructure at Georgia Tech, identified ongoing problems and made recommendations for long term chilled water infrastructure development and efficiency improvements. The Georgia Tech office of Facilities and RDA Engineering, Inc. have worked together to assemble relevant information and prepare the recommendations contained in this document.

  7. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    Torr and consisted of a 1.4 lm undoped GaN buffer layer on i-SiC substrate, * Corresponding authorLow frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors N. Pala a November 2002 Abstract Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect

  8. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    E-Print Network [OSTI]

    Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

    2010-08-24T23:59:59.000Z

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  9. Thermal Stability of MnBi Magnetic Materials. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    because Mn is easy to react with oxygen. MnO formation is irreversible and causes degradation to the magnetic properties. In this paper, we report our effort on developing MnBi...

  10. Disentangling the Mn moments on different sublattices in the half-metallic ferrimagnet Mn3?xCoxGa

    E-Print Network [OSTI]

    Klaer, P.

    2012-01-01T23:59:59.000Z

    man synchrotron light source (BESSY II) and BL6.3.1 at theS. Cramm for support at BESSY. This project was ?nancially

  11. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three

  12. Case Study: Georgia-Pacific Reduces Outside Fuel Costs and Increases Process Efficiency with Insulation Upgrade Program 

    E-Print Network [OSTI]

    Jackson, D.

    1997-01-01T23:59:59.000Z

    on purchased fuel. Georgia-Pacific realized immediate and significant results and reduced fuel cost by about one third over a one year period....

  13. Bicolor Mn-doped CuInS{sub 2}/ZnS core/shell nanocrystals for white light-emitting diode with high color rendering index

    SciTech Connect (OSTI)

    Huang, Bo; Dai, Qian; Zhang, Huichao; Liao, Chen; Cui, Yiping; Zhang, Jiayu, E-mail: jyzhang@seu.edu.cn [Advanced Photonic Center, Southeast University, Nanjing 210096 (China); Zhuo, Ningze; Jiang, Qingsong; Shi, Fenghua; Wang, Haibo [Research Institute of Electric Light Source Materials, Nanjing University of Technology, Nanjing 210015 (China)

    2014-09-07T23:59:59.000Z

    We synthesized bicolor Mn-doped CuInS{sub 2} (CIS)/ZnS core/shell nanocrystals (NCs), in which Mn{sup 2+} ions and the CIS core were separated with a ZnS layer, and both Mn{sup 2+} ions and CIS cores could emit simultaneously. Transmission electron microscopy and powder X-ray diffraction measurements indicated the epitaxial growth of ZnS shell on the CuInS{sub 2} core, and electron paramagnetic resonance spectrum indicated that Mn{sup 2+} ions were on the lattice points of ZnS shell. By integrating these bicolor NCs with commercial InGaN-based blue-emitting diodes, tricolor white light-emitting diodes with color rendering index of 83 were obtained.

  14. Effect of Mn doping on the structural, morphological, optical...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films. Effect of Mn doping on the structural, morphological, optical and magnetic...

  15. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1

    E-Print Network [OSTI]

    Nabben, Reinhard

    Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1 , T. Stempel1/37, 01-142 Warsaw, Poland ABSTRACT Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumines- cence

  16. Spin-Orbit Torque Driven Magnetization Dynamics in (Ga,Mn)As and (Ga,Mn)(As,P) Dilute Magnetic Semiconductors

    E-Print Network [OSTI]

    Vehstedt, Erin Kathleen

    2014-07-18T23:59:59.000Z

    Spintronics-based technologies are poised to leapfrog the current limitations on the scaling, speed, and power consumption of electronic devices. Conventional devices rely on complex structures and magnetic-field-based switching to manipulate data...

  17. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

    SciTech Connect (OSTI)

    Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-06-21T23:59:59.000Z

    The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

  18. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01T23:59:59.000Z

    T. Henderson, “High- Speed InGaP/GaAs HBT’s Using a SimpleA typical AlGaAs/GaAs HBT or InGaP/GaAs HBT has the opposite

  19. Abundance analysis of SB2 binary stars with HgMn primaries

    E-Print Network [OSTI]

    T. Ryabchikova

    1998-05-06T23:59:59.000Z

    We present a short review of the abundances in the atmospheres of SB2 systems with Mercury-Manganese (HgMn) primaries. Up to now a careful study has been made for both components of 8 out of 17 known SB2 binaries with orbital periods shorter than 100 days and mass ratio ranging from 1.08 to 2.2. For all eight systems we observe a lower Mn abundance in the secondary's atmospheres than in the primary's. Significant difference in the abundances is also found for some peculiar elements such as Ga, Xe, Pt. All secondary stars with effective temperatures less than 10000 K show abundance characteristics typical of the metallic-line stars.

  20. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  1. Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta

    E-Print Network [OSTI]

    Svane, Axel Torstein

    69,71 Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta Department of Physics properties of wurtzite GaN are studied by Ga nuclear magnetic resonance NMR in a GaN bulk crystal containing GaN is a wide band-gap semiconductor which crystallizes in the hexagonal wurtzite structure

  2. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions Y Abstract Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region

  3. Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao1, USA tpalacios@mit.edu; (617) 324-2395 Keywords: AlGaN/GaN HEMTs, reliability, moisture, electro-chemical reactions Abstract The nature of structural degradation in AlGaN/GaN high electron mobility transistors

  4. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High

    E-Print Network [OSTI]

    Li, Yat

    Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN

  5. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01T23:59:59.000Z

    J. Inoue, S. Nonoyama, and H. Itoh, Phys. Rev. Lett. 85, 4610 #1;2000#2;. 10 V. I. Litvinov and V. K. Dugaev, Phys. Rev. Lett. 86, 5593 #1;2001#2;. 11 A. C. Durst, R. N. Bhatt, and P. A. Wolff, Phys. Rev. B 65, 235205 #1;2002#2;. 12 A. L.... Chudnovskiy and D. Pfannkuche, Phys. Rev. B 65, 165216 #1;2002#2;. 13 A. Kaminski and S. Das Sarma, Phys. Rev. Lett. 88, 247202 #1;2002#2;. 14 M. Berciu and R. N. Bhatt, Phys. Rev. Lett. 87, 107203 #1;2001#2;. 15 R. N. Bhatt, M. Berciu, M. P. Kennett...

  6. Coordinator of Operations The University of Georgia is seeking a qualified candidate to serve as the Coordinator of Operations with the

    E-Print Network [OSTI]

    Arnold, Jonathan

    with the University of Georgia. The Archway Partnership has received funding from the Board of Regents to continueCoordinator of Operations The University of Georgia is seeking a qualified candidate to serve to bring the University of Georgia's expertise to communities and to facilitate community interaction

  7. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    to Georgia soils. Soil test phosphorous level by itself is not adequate to determine environmental risk by applying less manure, adding buffers or applying other management procedures. Sources of Risk and Transport and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2004 COMMERCIAL EGG TIP... GEORGIA'S PHOSPHOROUS INDEX

  8. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    to Georgia soils. Soil test phosphorous level by itself is not adequate to determine environmental risk by applying less litter, adding buffers or applying other management procedures. Sources of Risk and Transport and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2004 BROILER TIP... GEORGIA'S PHOSPHOROUS INDEX

  9. Beta decay of Ga-62 

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

  10. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  11. PhD Graduate Opportunity: Ecology of Juvenile Desert Tortoises Agency/Organization: University of Georgia's Savannah River Ecology Lab

    E-Print Network [OSTI]

    Georgia, University of

    of Georgia's Savannah River Ecology Lab Location: UGA (Athens, Georgia) / Mojave National Preserve research at Mojave National Preserve, California. Preference will be given to those applicants who qualify about Dr. Tuberville's lab, including people and publications, can be found at: http

  12. Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and Use of Data Policy

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and Use of Data Policy Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and the NACElink Network to provide student with Eagle Career Net. Eagle Career Net is our online system

  13. Observations of short-circuiting flow paths within a free-surface wetland in Augusta, Georgia, U.S.A.

    E-Print Network [OSTI]

    Licciardi, Joseph M.

    constructed treatment wetland in Augusta, Georgia were used to quantify the size, distribution, velocity). In treatment wetlands, such heterogeneity nearly always results in reduced contaminant removal (WoObservations of short-circuiting flow paths within a free-surface wetland in Augusta, Georgia, U

  14. Energy conserving site design case study: Shenandoah, Georgia. Final report

    SciTech Connect (OSTI)

    Not Available

    1980-01-01T23:59:59.000Z

    The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

  15. Luminescence properties of defects in GaN

    SciTech Connect (OSTI)

    Reshchikov, Michael A.; Morkoc, Hadis [Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2005-03-15T23:59:59.000Z

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

  16. IMPROVEMENT OF CdMnTe DETECTOR PERFORMANCE BY MnTe PURIFICATION

    SciTech Connect (OSTI)

    Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Tappero, R.; Hossain, A.; Cui, Y.; Yang, G.; Gul, R.; and James, R.B.

    2011-04-25T23:59:59.000Z

    Residual impurities in manganese (Mn) are a big obstacle to obtaining high-performance CdMnTe (CMT) X-ray and gamma-ray detectors. Generally, the zone-refining method is an effective way to improve the material's purity. In this work, we purified the MnTe compounds combining the zone-refining method with molten Te, which has a very high solubility for most impurities. We confirmed the improved purity of the material by glow-discharge mass spectrometry (GDMS). We also found that CMT crystals from a multiply-refined MnTe source, grown by the vertical Bridgman method, yielded better performing detectors.

  17. Design and performance of the Georgia Tech Aquatic Center photovoltaic system. Final report

    SciTech Connect (OSTI)

    Rohatgi, A.; Begovic, M.; Long, R.; Ropp, M.; Pregelj, A.

    1996-12-31T23:59:59.000Z

    A building-integrated DC PV array has been constructed on the Georgia Tech campus. The array is mounted on the roof of the Georgia Tech Aquatic Center (GTAC), site of the aquatic events during the 1996 Paralympic and Olympic Games in Atlanta. At the time of its construction, it was the world`s largest roof-mounted photovoltaic array, comprised of 2,856 modules and rates at 342 kW. This section describes the electrical and physical layout of the PV system, and the associated data acquisition system (DAS) which monitors the performance of the system and collects measurements of several important meteorological parameters.

  18. Co layer thickness dependence of exchange biasing for IrMnCo and FeMnCo

    E-Print Network [OSTI]

    Reilly, Anne

    Co layer thickness dependence of exchange biasing for IrMnÕCo and FeMnÕCo K. A. Seua) and H. Huang) in IrMn/Co and FeMn/Co bilayers using the magneto-optical Kerr effect. Samples are sputtered wedges on silicon with Co thicknesses ranging from 1 to 17 nm. The IrMn/Co with exchange bias interface energy of 0

  19. High Mn austenitic stainless steel

    DOE Patents [OSTI]

    Yamamoto, Yukinori (Oak Ridge, TN) [Oak Ridge, TN; Santella, Michael L (Knoxville, TN) [Knoxville, TN; Brady, Michael P (Oak Ridge, TN) [Oak Ridge, TN; Maziasz, Philip J (Oak Ridge, TN) [Oak Ridge, TN; Liu, Chain-tsuan (Knoxville, TN) [Knoxville, TN

    2010-07-13T23:59:59.000Z

    An austenitic stainless steel alloy includes, in weight percent: >4 to 15 Mn; 8 to 15 Ni; 14 to 16 Cr; 2.4 to 3 Al; 0.4 to 1 total of at least one of Nb and Ta; 0.05 to 0.2 C; 0.01 to 0.02 B; no more than 0.3 of combined Ti+V; up to 3 Mo; up to 3 Co; up to 1W; up to 3 Cu; up to 1 Si; up to 0.05 P; up to 1 total of at least one of Y, La, Ce, Hf, and Zr; less than 0.05 N; and base Fe, wherein the weight percent Fe is greater than the weight percent Ni, and wherein the alloy forms an external continuous scale including alumina, nanometer scale sized particles distributed throughout the microstructure, the particles including at least one of NbC and TaC, and a stable essentially single phase FCC austenitic matrix microstructure that is essentially delta-ferrite-free and essentially BCC-phase-free.

  20. Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

    E-Print Network [OSTI]

    Coldren, Larry A.

    Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system Erik J InGaAs/InGaAsP/InGaP material system. © 2005 American Institute of Physics. DOI: 10 of achieving QWI in such active regions.3,4 However, InGaAs/InGaAsP/InGaP-based de- vices offer numerous

  1. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23T23:59:59.000Z

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  2. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01T23:59:59.000Z

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  3. Municipal Electric Authority of Georgia | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation, searchOfRose BendMiasoleTremor(Question) | OpenGA References: SGIC[1] This

  4. AlGaAs/InGaAs/AlGaAs Double Barrier

    E-Print Network [OSTI]

    Perera, A. G. Unil

    -state Er. Tunneling Quantum Dot Sensors for Multi-band Infrared and Terahertz Radiation Detection G radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due

  5. Fe-CYCLE BACTERIA FROM INDUSTRIAL CLAYS MINED IN GEORGIA, USA EVGENYA S. SHELOBOLINA

    E-Print Network [OSTI]

    Lovley, Derek

    Fe-CYCLE BACTERIA FROM INDUSTRIAL CLAYS MINED IN GEORGIA, USA EVGENYA S. SHELOBOLINA 1, *,{, SAM M are major discoloring impurities in mined commercial white kaolin clay. In order to evaluate the potential influence of Fe-cycle bacteria on Fe cycling during post- depositional clay-weathering alteration, Fe

  6. Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Comparative Anatomy of Vertebrates

    E-Print Network [OSTI]

    Carrington, Emily

    Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Syllabus Comparative Anatomy of Vertebrates Biology 453 Tentative: Autumn Quarter 2014 Course Web Page: http://courses'll want to cover your eyes with safety glasses or wear glasses on dissection lab days. Goals My course

  7. Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Comparative Anatomy of Vertebrates

    E-Print Network [OSTI]

    Carrington, Emily

    Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Syllabus Comparative Anatomy of Vertebrates Biology 453 Winter Quarter 2014 Course Web Page: http://courses.washington.edu/chordate/hmpg-biol453.html glasses on dissection lab days. Goals My course goals begin with learning the vocabulary of anatomy; you

  8. Adopted Version 1 Georgia Tech's "BuzzPort" Portal Usage Policy

    E-Print Network [OSTI]

    Li, Mo

    Adopted Version 1 Georgia Tech's "BuzzPort" Portal Usage Policy v. 7.1 1.0 PURPOSE This Policy are highly valued and sensitive Institute resources. This Policy establishes an acceptable usage framework.0 SCOPE This Policy applies to all authorized BuzzPort usage from any location at all times

  9. Georgia Institute of Technology Ventilation System Testing Effective Date 04/01/02

    E-Print Network [OSTI]

    Georgia Institute of Technology Ventilation System Testing Effective Date 04/01/02 Revised 05 for measuring ventilation system performance. 2. Sash Positions a. Vertical rising sashes will be surveyed traverse measurements will be performed per the procedures described in Industrial Ventilation. b. Static

  10. Georgia researchers uncover new ways to meet America's alternative energy needs. By Kathy Brister

    E-Print Network [OSTI]

    Nair, Sankar

    -up companies. State economic developers attracted more than $3 billion in commercial green-energy projects over-edge" biofuel projects. Here's a look at some of the bioenergy innovations under way in Georgia, Tapping Timber bioenergy company Range Fuels plans to crank up what's being billed as the United States' first commercial

  11. This article was downloaded by: [University of Georgia] On: 04 February 2014, At: 13:21

    E-Print Network [OSTI]

    Georgia, University of

    b a Savannah River National Laboratory, Savannah River Site, Aiken, SC 29808, USA b Savannah River. Fletcherb and Andrew M. Grosseb,y a Savannah River National Laboratory, Savannah River Site, Aiken, SC 29808, USA; b Savannah River Ecology Laboratory, University of Georgia, Aiken, SC 29808, USA (Received 30

  12. Color Removal from Pulp Mill Effluent Using Coal Ash Produced from Georgia Coal Combustion Power Plants

    E-Print Network [OSTI]

    Hutcheon, James M.

    permits. To improve the aesthetic qualities of the effluent, coal ash (from local power plants_mill_discharge.jpg 2. Coal Power Plant http://www.csmonitor.com/var/ezflow_site/storage/images/media/images/2008Color Removal from Pulp Mill Effluent Using Coal Ash Produced from Georgia Coal Combustion Power

  13. Board of Regents University System of Georgia Architecture and Engineering Design Standards

    E-Print Network [OSTI]

    Board of Regents University System of Georgia Architecture and Engineering Design Standards your pointer on the section title and pick/select. #12;010000 - ARCHITECTURAL 7 010001- General Requirements 7 013515 LEED and Sustainable Design 42 013516 Sustainable Design Reporting 47 015713- Temporary

  14. An Experimental Study of Microfabricated Nickel Spark Plug Georgia Institute of technology

    E-Print Network [OSTI]

    electrodeposition through polymer molds. The nickel spark plugs are tested at 20 Hz using spark energies of 5 mAn Experimental Study of Microfabricated Nickel Spark Plug Georgia Institute of technology Atlanta presents experimental. results of the erosion and wear characteristics of micromachined nickel spark plugs

  15. Space Physics in Greece: Experience and Future Prospects Ioannis A. Daglis, Anastasios Anastasiadis and Georgia Tsiropoula

    E-Print Network [OSTI]

    Anastasiadis, Anastasios

    Space Physics in Greece: Experience and Future Prospects Ioannis A. Daglis, Anastasios Anastasiadis and Georgia Tsiropoula National Observatory of Athens, Institute of Ionospheric and Space Research, Penteli Engineering, Xanthi, Greece Abstract. Space Physics was born with the launch of the first artifi­ cial

  16. Habitat for Humanity: La Grange, Georgia, 2003 Jimmy Carter Work Project

    SciTech Connect (OSTI)

    Not Available

    2005-06-01T23:59:59.000Z

    The Troup-Chambers Habitat for Humanity built a Habitat house to ENERGY STAR standards in LaGrange, Georgia, in 2003. The project was so successfully that all Troup-Chambers houses will now be built to ENERGY STAR standards.

  17. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells...

  18. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

    2010-10-14T23:59:59.000Z

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  19. Influence of Ga{sup 3+} ions on spectroscopic and dielectric features of multi component lithium lead boro bismuth silicate glasses doped with manganese ions

    SciTech Connect (OSTI)

    Ramesh Babu, P.; Vijay, R. [Department of Physics, Acharya Nagarjuna University, Nagarjunanagar 522510, A.P. (India); Nageswara Rao, P. [Department of Physics, University College of Engg. and Technology, Acharya Nagarjuna University, Nagarjunanagar 522510, A.P. (India); Veeraiah, N. [Department of Physics, Acharya Nagarjuna University, Nagarjunanagar 522510, A.P. (India); Krishna Rao, D., E-mail: krdhanekula@yahoo.co.in [Department of Physics, Acharya Nagarjuna University, Nagarjunanagar 522510, A.P. (India)

    2013-11-15T23:59:59.000Z

    Graphical abstract: The plots between ??(?)? vs. ??(?) and ??(?)/? vs. ??(?) yield straight lines with slope 1/? and ?, respectively. Considerable deviation from the straight line is observed in the high frequency region. Such deviation suggests spreading of relaxation times and this is attributed to the presence of multiple type of dipoles in the glass matrix. Variation of the parameters ???(?) and ??(?)/? with ??(?) of glass Li{sub 2}O–PbO–B{sub 2}O{sub 3}–SiO{sub 2}–Bi{sub 2}O{sub 3}–MnO multi-component glasses mixed with 2.0 mol% of Ga{sub 2}O{sub 3} measured at 373 K. - Highlights: • A series of Li{sub 2}O–PbO–B{sub 2}O{sub 3}–SiO{sub 2}–Bi{sub 2}O{sub 3}–MnO:Ga{sub 2}O{sub 3} glasses have been synthesized. • A variety of spectroscopic and dielectric properties have been investigated. • Analysis of the results indicated that glasses with below 3.0 mol% Ga{sub 2}O{sub 3} are good conducting materials. - Abstract: Multi-component glasses of the chemical composition 19.5Li{sub 2}O–20PbO–20B{sub 2}O{sub 3}–30SiO–(10 ? x)Bi{sub 2}O{sub 3}–0.5MnO:xGa{sub 2}O{sub 3} with 0 ? x ? 5.0 have been synthesized. Spectroscopic (optical absorption, IR, Raman and ESR) and dielectric properties were investigated. Optical absorption and ESR spectral studies have indicated that managanese ions do exist in Mn{sup 3+} state in addition to Mn{sup 2+} state in the samples containing low concentration of Ga{sub 2}O{sub 3}. The IR and Raman studies indicated increasing degree of disorder in the glass network with the concentration of Ga{sub 2}O{sub 3} up to 3.0 mol%. The dielectric constant, loss and ac conductivity are observed to increase with the concentration of Ga{sub 2}O{sub 3} up to 3.0 mol%. The quantitative analysis of the results of dielectric properties has indicated an increase in the insulating strength of the glasses as the concentration of Ga{sub 2}O{sub 3} is raised beyond 3.0 mol%. This has been attributed to adaption of gallium ions from octahedral to tetrahedral coordination.

  20. Ferromagnetic transition temperature enhancement in (Ga,Mn)As semiconductors by carbon codoping

    E-Print Network [OSTI]

    Jungwirth, T.; Masek, J.; Sinova, Jairo; MacDonald, AH.

    2003-01-01T23:59:59.000Z

    . Matsukura, J. Cibert, and D. Ferrand, Sci- ence 287, 1019 ~2000!. 10 T. Jungwirth, J. Ko?nig, J. Sinova, J. Kuc?era, and A.H. Mac- Donald, Phys. Rev. B 66, 012402 ~2002!. 11 Y.D. Park, J.D. Lim, K.S. Suh, S.B. Shim, J.S. Lee, C.R. Aber- nathy, S... ~2001!. 25 T. Dietl, J. Ko?nig, and A.H. MacDonald, Phys. Rev. B 64, 241201 ~2001!. 26 T. Jungwirth, Q. Niu, and A.H. MacDonald, Phys. Rev. Lett. 88, 207208 ~2002!. 27 T. Jungwirth, Cairo Sinova, K.Y. Wang, K.W. Edmonds, R.P. Campion, B...

  1. Acoustic assisted actuation of Ni-Mn-Ga ferromagnetic shape memory alloys

    E-Print Network [OSTI]

    Peterson, Bradley William

    2006-01-01T23:59:59.000Z

    Ferromagnetic shape memory alloys (FSMA) have been shown in recent work to exhibit large magnetic field induced strains. The material generally requires a large threshold field (of order 3-4 kOe) to initiate the strain. ...

  2. Ultrafast Enhancement of Ferromagnetism via Photoexcited Holes in GaMnAs

    E-Print Network [OSTI]

    Wang, J.; Cotoros, I.; Dani, K.M.; Liu, X.; Furdyna, J.K.; Chemla, D.S.

    2007-01-01T23:59:59.000Z

    relevant time scales for the build-up of order parameters.magnetization build-up occurs on a 100-ps time scale and

  3. Structural and Dynamical Fluctuations in Off-Stoichiometric NiMnGa Shape-Memory Alloys

    SciTech Connect (OSTI)

    Barabash, Rozaliya [ORNL] [ORNL; Barabash, Oleg M [ORNL] [ORNL; Karapetrova, Evgenia [University of Illinois, Urbana-Champaign] [University of Illinois, Urbana-Champaign; Manley, Michael E [ORNL] [ORNL

    2014-01-01T23:59:59.000Z

    3D diffuse scattering dataset in the temperature region of the existence of high temperature cubic L21 phase reveals localized intensity maxima related to phason modes. Peierls instability induced tetragonal distortions in the pre-martensitic phase cause strong diffuse scattering. Around (H0H) reflections diffuse scattering is strongly compressed along the [H0H] and enhanced along the [-H0H] direction.

  4. Magnetocaloric effect in Ni-Mn-Ga thin films under concurrent magnetostructural and Curie transitions

    E-Print Network [OSTI]

    Niewczas, Marek

    refrigeration applications where low magnetic fields are favorable. VC 2011 American Institute of Physics. [doi in the magnetic refrigerant element, a material system exhibiting a large entropy change is highly advantageous to magnetic refrigeration technologies. An entropy change can be induced in magnetic refriger- ant materials

  5. PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS

    E-Print Network [OSTI]

    McCluskey, Matthew

    -µm thick GaN layer deposited on a sapphire substrate, and it is capped by a 0.2-µm GaN:Mg pPRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS W. Shan,* J.W. Ager pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied

  6. Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1

    E-Print Network [OSTI]

    As, Donat Josef

    ) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN

  7. InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular; accepted 17 November 1995 The growth and device characterization of an InGaP/GaAs double-quality phosphorus-containing compounds.1­4 The growth of high-performance InGaP/ GaAs and InGaAs/InP single

  8. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P. C. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Baca, A. G. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Li, N. Y. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Xie, X. M. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Hou, H. Q. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Armour, E. [Emcore Corporation, Somerset, New Jersey 08873 (United States)] [Emcore Corporation, Somerset, New Jersey 08873 (United States)

    2000-04-17T23:59:59.000Z

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

  9. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-10T23:59:59.000Z

    The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.

  10. c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering.

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    c° Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School. If the MOSFET is in the pinch-off region, the following equations for ID hold: ID = K (VGS - VT H)2 (5) 2 #12

  11. Georgia Southern University Career Services Williams Center (912) 478-5197 www.georgiasouthern.edu/career/ Explore. Experience. Excel.

    E-Print Network [OSTI]

    Hutcheon, James M.

    · Enterprise Resource Planning Sys. (SAP) · Accounting Information Systems · Business Application Development Developers · Project Analysts · Technical Consultant · Systems Programmer · Internet Developers · Application System Managers · Project Managers What Can I Do With A Major In . . . INFORMATION SYSTEMS #12;Georgia

  12. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect (OSTI)

    Not Available

    2011-05-01T23:59:59.000Z

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  13. Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

    E-Print Network [OSTI]

    Sirenko, Andrei

    Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well MQW structures grown on the sidewalls of 10- m-wide triangular GaN ridges with 1-1.1 facets. Samples were produced

  14. GaN0.011P0.989–GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

    E-Print Network [OSTI]

    Tu, Charles W

    2000-01-01T23:59:59.000Z

    and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)

  15. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.

    2000-01-11T23:59:59.000Z

    The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.

  16. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Mazumder, B.; Hurni, C. A.; Zhang, J. Y.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, M. H.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2012-08-27T23:59:59.000Z

    In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.

  17. Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J.; Takamoto, T. [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan); Ikeda, E.; Kurita, H. [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)

    1997-03-01T23:59:59.000Z

    The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}

  18. Mn/DOT's Project Peer Review

    E-Print Network [OSTI]

    Minnesota, University of

    and sustain this culture #12;Project Management #12;Recent National Work in Transportation Project ManagementMn/DOT's Project Management Peer Review Creating a Project Management Culture 2010 CTS Research a Peer Review? Why Project Management? ·Improve project delivery performance ­ on time, on budget (an

  19. MN4602 Crouch 2004 REASSESSING WEAPON SYSTEM

    E-Print Network [OSTI]

    MN4602 Crouch 2004 REASSESSING WEAPON SYSTEM OPERATIONAL TEST & EVALUATION METHODOLOGIES LTC Thom support assessing a weapon systems true cost and performance characteristics? S1: Can/should cost, operational effectiveness and suitability be assessed independent of one another? S2: Do current test

  20. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  1. Influence of interstitial Mn on magnetism in room-temperature ferromagnet Mn(1+delta)Sb

    SciTech Connect (OSTI)

    Taylor, Alice E [ORNL; Berlijn, Tom [ORNL; Hahn, Steven E [ORNL; May, Andrew F [ORNL; Williams, Travis J [ORNL; Poudel, Lekhanath N [ORNL; Calder, Stuart A [ORNL; Fishman, Randy Scott [ORNL; Stone, Matthew B [ORNL; Aczel, Adam A [ORNL; Cao, Huibo [ORNL; Lumsden, Mark D [ORNL; Christianson, Andrew D [ORNL

    2015-01-01T23:59:59.000Z

    We report elastic and inelastic neutron scattering measurements of the high-TC ferromagnet Mn(1+delta)Sb. Measurements were performed on a large, TC = 434 K, single crystal with interstitial Mn content of delta=0.13. The neutron diffraction results reveal that the interstitial Mn has a magnetic moment, and that it is aligned antiparallel to the main Mn moment. We perform density functional theory calculations including the interstitial Mn, and find the interstitial to be magnetic in agreement with the diffraction data. The inelastic neutron scattering measurements reveal two features in the magnetic dynamics: i) a spin-wave-like dispersion emanating from ferromagnetic Bragg positions (H K 2n), and ii) a broad, non-dispersive signal centered at forbidden Bragg positions (H K 2n+1). The inelastic spectrum cannot be modeled by simple linear spin-wave theory calculations, and appears to be significantly altered by the presence of the interstitial Mn ions. The results show that the influence of the int

  2. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Logo GaN nanowires show more 3D piezoelectricity than bulk GaN admin / January 11, 2012 individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D. This is in spite of the fact that each nanowire only measures 100nm in diameter. While GaN is ubiquitous in optoelectronic

  3. Self-aligned AlGaN/GaN transistors for sub-mm wave applications

    E-Print Network [OSTI]

    Saadat, Omair I

    2010-01-01T23:59:59.000Z

    This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

  4. Invited Paper GaN HEMT reliability

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Invited Paper GaN HEMT reliability J.A. del Alamo *, J. Joh Microsystems Technology Laboratories mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier

  5. Computers and nautical archaeology: characterization of the C.S.S. Georgia wreck site

    E-Print Network [OSTI]

    Baker, James Graham

    1982-01-01T23:59:59.000Z

    , Texas A&N University's Cultural Resource Laboratory contracted with the Corps of Engineers to perform this characterization. Conditions at the Wreck Site The environment of the wreck is determined by the Savannah river. The sediment load is so heavy..., Savannah District, to investigate, characterize, and make recommendations regarding the wreck site of a Civil War period Confederate ironclad vessel, the C. S. S. GEORGIA. The survey proved to be difficult, since visibility in the Savannah River around...

  6. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  7. InAs=InGaP=GaAs heterojunction power Schottky rectifiers

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InAs=InGaP=GaAs heterojunction power Schottky rectifiers A. Chen, M. Young and J.M. Woodall A low-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier

  8. Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs Rajkumar Santhakumar, Yi have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. Index Terms -- GaN

  9. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

    E-Print Network [OSTI]

    Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Qimin Yan,1,a Patrick November 2010 The effect of strain on the valence-band structure of 112¯2 semipolar InGaN grown on GaN D6 is calculated for GaN and InN using density functional theory with the Heyd­Scuseria­ Ernzerhof

  10. GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges

    E-Print Network [OSTI]

    Perera, A. G. Unil

    GaN/AlGaN heterojunction infrared detector responding in 8­14 and 20­70 m ranges G. Ariyawansa, M October 2006 A GaN/AlGaN heterojunction interfacial work function internal photoemission infrared detector, the work demonstrates 54 m 5.5 THz operation of the detector based on 1s­2p± transition of Si donors in GaN

  11. Unexpected crystal and magnetic structures in MnCu4In and MnCu4Sn

    SciTech Connect (OSTI)

    Provino, A.; Paudyal, D.; Fornasini, ML; Dhiman, I.; Dhar, SK.; Das, A.; Mudryk, Y.; Manfrinetti, P.; Pecharsky, VK

    2013-01-29T23:59:59.000Z

    We discovered a new compound MnCu4In with its own hexagonal structure type (hP12-P63mc, ternary ordered derivative of the hexagonal MgZn2-type) that becomes ferromagnetic at TC = 540 K. This transition temperature is higher than that found in the MnCu2In and MnCu2Sn alloys. In contrast, the homologous compound MnCu4Sn, which crystallizes in the cubic MgCu4Sn-type, orders antiferromagnetically with TN = 110 K. The neutron diffraction studies show ferromagnetic spin orientation in the {1 0 1} plane in MnCu4In with a magnetic moment of 4.5 ?B/Mn at 22 K, and a corresponding value of 4.7 ?B/Mn in the antiferromagnetic MnCu4Sn with propagation vector View the MathML source. The first-principles electronic structure calculations show that the unexpected difference in both magnetic and crystal structures of MnCu4In and MnCu4Sn is due to the difference in the Mn-3d bands and exchange interactions relating to different crystal anisotropy, coordination numbers, and interatomic distances.

  12. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  13. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

    SciTech Connect (OSTI)

    Chen, Z.; Denbaars, S. P. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Keller, S.; Mishra, U. K. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chung, R.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-03-16T23:59:59.000Z

    Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm{sup 2}/V s. High electron mobility transistors (HEMTs) with 0.65 {mu}m long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

  14. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Huajie Chen, Kista, Sweden Abstract Strain-compensated InGaAsP/InGaP superlattices are studied in cross- section. The strain compensated InGaAsP/InGaP/InP superlattices studied here have application for light sources

  15. AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN

  16. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  17. In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a

    E-Print Network [OSTI]

    Yang, Kyounghoon

    205 Abstract In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device basedBm at 2 GHz have been demonstrated from the fabricated device. 1. Introduction In recent years, AlGaN/GaN noise amplifier and switch. Superior results have been reported in microwave power performance of AlGaN/GaN

  18. A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate

  19. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate,

    E-Print Network [OSTI]

    Boyer, Edmond

    Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Aristide Briand, 92.195 Meudon, France Abstract. Wide bandgap devices such as AlGaN/GaN High Electron of GR- bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR

  20. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2012-12-24T23:59:59.000Z

    Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

  1. Landscape influences on headwater streams on Fort Stewart, Georgia, USA

    SciTech Connect (OSTI)

    Jager, Yetta [ORNL; Bevelhimer, Mark S [ORNL; al., et. [Various Institutes

    2011-01-01T23:59:59.000Z

    Military landscapes represent a mixture of undisturbed natural ecosystems, developed areas, and lands that support different types and intensities of military training. Research to understand water-quality influences of military landscapes usually involves intensive sampling in a few watersheds. In this study, we developed a survey design of accessible headwater watersheds intended to improve our ability to distinguish land water relationships in general, and training influences, in particular, on Fort Stewart, GA. We sampled and analyzed water from watershed outlets. We successfully developed correlative models for total suspended solids (TSS), total nitrogen (TN), organic carbon (OC), and organic nitrogen (ON), which dominated in this blackwater ecosystem. TSS tended to be greater in samples after rainfall and during the growing season, and models that included %Wetland suggested a build-and-flush relationship. We also detected a positive association between TSS and tank-training, which suggests a need to intercept sediment-laden runoff from training areas. Models for OC showed a negative association with %Grassland. TN and ON both showed negative associations with %Grassland, %Wetland, and %Forest. Unexpected positive associations were observed between OC and equipmenttraining activity and between ON and %Bare ground ? Roads. Future studies that combine our survey-based approach with more intensive monitoring of the timing and intensity of training would be needed to better understand the mechanisms for these empirical relationships involving military training. Looking beyond local effects on Fort Stewart streams, we explore questions about how exports of OC and nitrogen from coastal military installations ultimately influence estuaries downstream.

  2. High efficiency InGaP solar cells for InGaP/GaAs tandem cell application

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H.; Ohmori, M. [Japan Energy Corp., Toda, Saitama (Japan). Central Research Lab.

    1994-12-31T23:59:59.000Z

    In this paper, high conversion efficiency single junction InGaP solar cells with n-p-p{sup +} structure are presented and their application to InGaP/GaAs monolithic tandem cells is discussed. In the InGaP cells, a best conversion efficiency of 18.48% was achieved by introducing the p{sup +} peak back surface field (BSF) layer with a high carrier concentration of 2 {times} 10{sup 18} cm{sup {minus}3}, which improved both short circuit current (Isc) and open circuit voltage (Voc). However, in the case of InGaP/GaAs tandem cells, a decrease in carrier concentration of the InGaP BSF layer, which was caused by the diffusion of Zn, was found to reduce the Isc and Voc of the tandem cell. The reduction in the carrier concentration was suppressed by using a thicker BSF layer of 0.5 {micro}m, which reduced the current density in the GaAs bottom cell. An InGaP/GaAs tandem cell with 27.3% efficiency and a high Voc of 2.418 V was obtained.

  3. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

    E-Print Network [OSTI]

    Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP

  4. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates

    E-Print Network [OSTI]

    Manfra, Michael J.

    PS-4 AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates Nils ABSTRACT Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established, and HVPE SI-GaN templates on sapphire. While sapphire and SI-Sic are established substrates for the growth

  5. ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    MOSCAP process ?ow: n-GaN substrate; Ohmic metallization andtion for a AlGaN/ GaN HEMT on a substrate which has a poorsapphire substrate, a well-passivated AlGaN/ GaN HEMT grown

  6. Magnetic field-induced phase transformation in NiMnCoIn magnetic shape memory alloys - a new actuation mechanism with large work output.

    SciTech Connect (OSTI)

    Karaca, H. E.; Karaman, I.; Basaran, B.; Ren, Y.; Chumlyakov, Y. I.; Maier, H. J.; X-Ray Science Division; Texsas A& M Univ.; Univ. of Kentucky; Siberian Physical-Technical Inst.; Univ. of Paderborn

    2009-04-09T23:59:59.000Z

    Magnetic shape memory alloys (MSMAs) have recently been developed into a new class of functional materials that are capable of magnetic-field-induced actuation, mechanical sensing, magnetic refrigeration, and energy harvesting. In the present work, the magnetic field-induced martensitic phase transformation (FIPT) in Ni{sub 45}Mn{sub 36.5}Co{sub 5}In{sub 13.5} MSMA single crystals is characterized as a new actuation mechanism with potential to result in ultra-high actuation work outputs. The effects of the applied magnetic field on the transformation temperatures, magnetization, and superelastic response are investigated. The magnetic work output of NiMnCoIn alloys is determined to be more than 1 MJ m{sup -3} per Tesla, which is one order of magnitude higher than that of the most well-known MSMAs, i.e., NiMnGa alloys. In addition, the work output of NiMnCoIn alloys is orientation independent, potentially surpassing the need for single crystals, and not limited by a saturation magnetic field, as opposed to NiMnGa MSMAs. Experimental and theoretical transformation strains and magnetostress levels are determined as a function of crystal orientation. It is found that [111]-oriented crystals can demonstrate a magnetostress level of 140 MPa T{sup -1} with 1.2% axial strain under compression. These field-induced stress and strain levels are significantly higher than those from existing piezoelectric and magnetostrictive actuators. A thermodynamical framework is introduced to comprehend the magnetic energy contributions during FIPT. The present work reveals that the magnetic FIPT mechanism is promising for magnetic actuation applications and provides new opportunities for applications requiring high actuation work-outputs with relatively large actuation frequencies. One potential issue is the requirement for relatively high critical magnetic fields and field intervals (1.5-3 T) for the onset of FIPT and for reversible FIPT, respectively.

  7. Green light emission by InGaN/GaN multiple-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)] [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Hsu, Gary Z. L. [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)] [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)

    2014-03-10T23:59:59.000Z

    The high-quality In{sub x}Ga{sub 1?x}N/GaN multiple quantum wells were grown on GaN microdisks with ?-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1?x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192?eV) emitted from the In{sub x}Ga{sub 1?x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383?eV) from GaN.

  8. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  9. Review of Multi-Person Exposure Calls to a Regional Poison Control Center

    E-Print Network [OSTI]

    Morgan, Brent W; Skinner, Carl G; Kleiman, Richard J; Geller, Robert J; Chang, Arthur S

    2010-01-01T23:59:59.000Z

    Exposure Calls to a Regional Poison Control Center Brent W.Medicine and the Georgia Poison Center, Atlanta, GA †of Pediatrics and the Georgia Poison Center, Atlanta, GA

  10. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Agui, T. [Japan Energy Corp., Toda, Saitama (Japan)] [and others

    1997-12-31T23:59:59.000Z

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  11. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20T23:59:59.000Z

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  12. Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

    SciTech Connect (OSTI)

    Roul, Basanta; Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Kalghatgi, A. T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Kumar, Nitesh; Sundaresan, A. [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)

    2011-10-17T23:59:59.000Z

    We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

  13. Pre-Natural Resources (Two-year) Transfer Program Georgia Southern University, in cooperation with the Warnell School of Forestry and

    E-Print Network [OSTI]

    Hutcheon, James M.

    with the Warnell School of Forestry and Natural Resources, University of Georgia, offers a joint program of study, soil and water resources, environmental assessment, or forestry. Students selecting pre of Georgia, Warnell School of Forestry and Natural Resources must complete an application which is separate

  14. SUPPORTED BY THE UGA OFFICE OF THE VICE PRESIDENT FOR INSTRUCTION OVPI.UGA.EDU The University of Georgia hosts the

    E-Print Network [OSTI]

    Arnold, Jonathan

    , the Assessment Institute and Advising Research Seminar. She co-authored two articles in Academic advising: New NACADA Georgia Drive-in Conference The University of Georgia Academic Advising Coordinating Council #12 to undergraduate education, student success and retention, academic advising, curriculum and policy development

  15. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  16. September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN as etch-stop layer

    E-Print Network [OSTI]

    Pala, Nezih

    0 2 V(V) C(pF) Before etching (material) After etching (device) G AlGaN substrate i-GaN DS AlN AlGaN substrate AlN i-GaN AlGaN S G DAlGaNAlGaN InGaNInGaN Standard gate recess InGaN stop layer gate recess InGaNICNS 7 September 16-21, 2007 ­ Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN

  17. Design of Semiconducting Tetrahedral Mn 1 ? x Zn x O Alloys and Their Application to Solar Water Splitting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; Zakutayev, Andriy; Lany, Stephan

    2015-05-01T23:59:59.000Z

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn??xZnxO alloys. At Zn compositions above x ? 0.3, thin films ofmore »these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. A proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.« less

  18. Design of Semiconducting Tetrahedral Mn 1 ? x Zn x O Alloys and Their Application to Solar Water Splitting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; Zakutayev, Andriy; Lany, Stephan

    2015-05-01T23:59:59.000Z

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn??xZnxO alloys. At Zn compositions above x ? 0.3, thin films of these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. A proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.

  19. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department March 2005 Titanium dioxide TiO2, with the rutile structure was grown on 0001 oriented GaN and 0001 Al0.33Ga0.67N/GaN heterostructure field effect transistor HFET structures by molecular beam epitaxy. X

  20. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    E-Print Network [OSTI]

    Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial p­i­n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1Àx N/GaN undoped QW system is coated over both

  1. ,"International Falls, MN Natural Gas Pipeline Imports From Canada...

    U.S. Energy Information Administration (EIA) Indexed Site

    International Falls, MN Natural Gas Pipeline Imports From Canada (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of...

  2. ,"Noyes, MN Natural Gas Pipeline Imports From Canada (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Imports From Canada (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Noyes, MN...

  3. ,"Warroad, MN Natural Gas Pipeline Imports From Canada (MMcf...

    U.S. Energy Information Administration (EIA) Indexed Site

    Imports From Canada (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Warroad, MN...

  4. High density plasma damage in InGaP/GaAs as AlGaAs/GaAs high electron mobility transistors

    SciTech Connect (OSTI)

    Lee, J.W.; Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F.; Kopf, R.F.; Kuo, J.M. [Bell Labs., Murray Hill, NJ (United States). Lucent Technologies; Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); Constantine, C.; Johnson, D. [Plasma-Therm Inc., St. Petersburg, FL (United States)

    1998-11-01T23:59:59.000Z

    The introduction of plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors (HEMTs) has been investigated using both inductively coupled plasma and electron cyclotron resonance Ar discharges. The saturated drain-source current is found to be decreased through introduction of compensating deep levels into the InGaP or AlGaAs donor layer. The degradation of device performance is a strong function of ion energy and ion flux, and an advantage of both high density plasma tools is that ion energy can be reduced by increasing the plasma density. Increasing process pressure and source power, and decreasing radio-frequency chuck power produce the lowest amounts of plasma damage in HEMTs.

  5. Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates

    E-Print Network [OSTI]

    Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates, around 104 cm-2 . The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP. High surface roughness and branch defects in Al InGaP lead to the lowest quality virtual substrates we

  6. Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method

    E-Print Network [OSTI]

    Okamoto, Koichi

    Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method; 78.55.Cr; 78.67.De; S7.14 Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using inhomogeneity of In composition. Recently, InGaN/GaN-based light emitting diodes (LEDs) have been commercialized

  7. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

    E-Print Network [OSTI]

    Chung, Jinwook

    We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...

  8. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire...

  9. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

    E-Print Network [OSTI]

    Lu, Bin

    AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...

  10. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  11. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-21T23:59:59.000Z

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1?x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1?y}N templates for x?>?y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1?x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1?y}N template. Growth of the In{sub y}Ga{sub 1?y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1?y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1?x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1?y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

  12. High current gain InGaN=GaN HBTs with C operating temperature

    E-Print Network [OSTI]

    Asbeck, Peter M.

    with an $20 nm low-temperature (Tg ¼ 550 C) GaN buffer layer on a (0001) sapphire substrate. The layer 1018 cmÀ3 Buffer GaN 2.5 mm ­ Substrate Sapphire ­ ­ HBT device processing began by depositing a 100 nmHigh current gain InGaN=GaN HBTs with 300 C operating temperature D.M. Keogh, P.M. Asbeck, T. Chung

  13. Alignment of micro-crystals of Mn12-acetate and direct observation of single molecules thereof

    E-Print Network [OSTI]

    Seo, Dongmin

    2009-05-15T23:59:59.000Z

    This dissertation focuses on three separate studies. First, magnetization of the Mn12- acetate was studied by low temperature hysteresis loops and DC magnetization data on magnetically aligned Mn12-acetate micro-crystals. Secondly, Mn12-acetate thin...

  14. Experimental and first-principles study of ferromagnetism in Mn-doped zinc stannate nanowires

    SciTech Connect (OSTI)

    Deng Rui; Zhou Hang; Qin Jieming; Wan Yuchun; Jiang Dayong; Liang Qingcheng [School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022 (China); Li Yongfeng [Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012 (China); Wu, Tom [Physical Sciences and Engineering Division, Solar and Photovoltaics Engineering Research Center, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia); Yao Bin [State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China); Liu Lei [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No.3888 Dongnanhu Road, Changchun 130033 (China)

    2013-07-21T23:59:59.000Z

    Room temperature ferromagnetism was observed in Mn-doped zinc stannate (ZTO:Mn) nanowires, which were prepared by chemical vapor transport. Structural and magnetic properties and Mn chemical states of ZTO:Mn nanowires were investigated by X-ray diffraction, superconducting quantum interference device (SQUID) magnetometry and X-ray photoelectron spectroscopy. Manganese predominantly existed as Mn{sup 2+} and substituted for Zn (Mn{sub Zn}) in ZTO:Mn. This conclusion was supported by first-principles calculations. Mn{sub Zn} in ZTO:Mn had a lower formation energy than that of Mn substituted for Sn (Mn{sub Sn}). The nearest neighbor Mn{sub Zn} in ZTO stabilized ferromagnetic coupling. This observation supported the experimental results.

  15. Atkinson County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcatAntrimArkansasAshford,AsotinAstonInformation Georgia ASHRAE

  16. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  17. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  18. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  19. Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

    SciTech Connect (OSTI)

    Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru; Mushnikov, Nikolai V., E-mail: kleinerman@imp.uran.ru; Stashkova, Liudmila A., E-mail: kleinerman@imp.uran.ru [Institute of Metal Physics UB RAS, S. Kovalevskaya str. 18, 620990 Ekaterinburg (Russian Federation)

    2014-10-27T23:59:59.000Z

    Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mössbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mössbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to enter the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)

  20. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  1. Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots

    E-Print Network [OSTI]

    Fonoberov, Vladimir

    Excitonic properties of strained wurtzite and zinc-blende GaNÕAlxGa1ÀxN quantum dots Vladimir A 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite WZ of GaN QDs.1­8 Molecu- lar beam epitaxial growth in the Stranski­Krastanov mode of wurtzite WZ Ga

  2. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

    E-Print Network [OSTI]

    Feenstra, Randall

    Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices R of Technology, Kista, Sweden Abstract We have investigated the properties of strain-compensated InGaAsP/In- GaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP

  3. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1 , Kristian of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer were exposed to oxygen. True buried heterostructures devices utilising InGaP clad- ding layers have

  4. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates

    E-Print Network [OSTI]

    Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates M. J of unconventional alloys of InGaP with In fraction of 0.2­0.4 grown on fully relaxed GaAsP virtual substrates demonstrate growth of extremely high quality InGaP heterostructures which hold promise for fabrication

  5. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap

  6. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1 G. Ariyawansa,1 online 2 September 2009 A study of trap states in n+ -GaN/AlGaN heterostructures using electrical related absorption centers attributed to shallow Si-donor pinned to the AlGaN barrier , N-vacancy/ C

  7. High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop

    E-Print Network [OSTI]

    Itoh, Tatsuo

    High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers radars and communications systems. GaN-based HEMT's for high power applications at microwave frequencies

  8. Minnesota Guidestar www.dot.state.mn.us/guidestar

    E-Print Network [OSTI]

    Minnesota, University of

    .dot.state.mn.us/guidestar What is ITS? · Application of technology to improve the safety and efficiency of the transportation system. #12;Minnesota Guidestar www.dot.state.mn.us/guidestar What is ITS? · Traffic Management ­ Signal Systems ­ Ramp Meters · Emergency Response ­ Mobile Data Terminals ­ 911 Dispatch ­ RF Data Networks

  9. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Uren, M. J.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Keller, S.; Kolluri, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)

    2014-08-11T23:59:59.000Z

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

  10. Georgia Southern's Student Sustainability Fee Funds $238,000 in Sustainability Projects STATESBORO, GA, May 10, 2014 -Georgia Southern University's Center for Sustainability is pleased to announce that the

    E-Print Network [OSTI]

    Hutcheon, James M.

    Supervisor, Department of Mechanical Engineering. Nanofiber Based Carbon Capture Technology to Reduce the CO2

  11. Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

    E-Print Network [OSTI]

    Peale, Robert E.

    of materials systems such as GaAs/AlGaAs,3 InGaP/InGaAs/GaAs,4 GaN/AlGaN,2,5 and Si Ref. 1 have been explored

  12. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  13. Magnetic Moment Enhancement for Mn7 Cluster on Graphene

    SciTech Connect (OSTI)

    Liu, Xiaojie [Ames Laboratory; Wang, Cai-Zhuang [Ames Laboratory; Lin, Hai-Qing [Beijing Computational Science Research Center; Ho, Kai-Ming [Ames Laboratory

    2014-08-21T23:59:59.000Z

    Mn7 cluster on graphene with different structural motifs and magnetic orders are investigated systematically by first-principles calculations. The calculations show that Mn7 on graphene prefers a two-layer motif and exhibits a ferrimagnetic coupling. The magnetic moment of the Mn7 cluster increases from 5.0 ?B at its free-standing state to about 6.0 ?B upon adsorption on graphene. Mn7 cluster also induces about 0.3 ?B of magnetic moment in the graphene layer, leading to an overall enhancement of 1.3 ?B magnetic moment for Mn7 on graphene. Detail electron transfer and bonding analysis have been carried out to investigate the origin of the magnetic enhancement.

  14. Spectroscopy of Mn atoms isolated in solid {sup 4}He

    SciTech Connect (OSTI)

    Moroshkin, P., E-mail: petr.moroshkin@riken.jp; Lebedev, V.; Weis, A. [Department of Physics, University of Fribourg, Chemin du Musée 3, 1700 Fribourg (Switzerland)

    2014-06-07T23:59:59.000Z

    We present an experimental study of the laser-induced luminescence spectra of Mn atoms in solid helium matrices. We observe transitions of the valence electron and of inner-shell electrons. We find that the Mn-He interaction perturbs the inner-shell transitions to a lesser extent than the valence-electron transitions. The observed lineshapes of the inner-shell transitions of Mn are similar to those of an inner-shell transition in Ba studied earlier. At the same time, they are more strongly perturbed than the corresponding transitions in Au and Cu under the same conditions. We suggest a qualitative explanation of these observations based on the atomic bubble model. Our results also suggest that the inner-shell transitions of Mn in solid He are more strongly perturbed than the same lines of Mn isolated in solid Ar or Kr matrices.

  15. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Fujioka, H., E-mail: hfujioka@iis.u-tokyo.ac.jp [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); CREST, Japan Science and Technology Corporation (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)

    2014-05-05T23:59:59.000Z

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3?×?10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  16. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar bandgap range. Index Terms--Epitaxy, GaAsP, InGaP, metamorphic. I. INTRODUCTION TODAY'S highest efficiency

  17. Chemical and structural investigation of the role of both Mn and Mn oxide in the formation of manganese silicate barrier layers on SiO{sub 2}

    SciTech Connect (OSTI)

    Casey, P.; Bogan, J.; Hughes, G. [School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9 (Ireland); Lozano, J. G.; Nellist, P. D. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)

    2011-09-01T23:59:59.000Z

    In this study, Mn silicate (MnSiO{sub 3}) barrier layers were formed on thermally grown SiO{sub 2} using both metallic Mn and oxidized Mn films, in order to investigate the role of oxygen in determining the extent of the interaction between the deposited Mn and the SiO{sub 2} substrate. Using x-ray photoelectron spectroscopy, it has been shown that a metallic Mn film with an approximate thickness of 1 nm cannot be fully converted to Mn silicate following vacuum annealing to 500 deg. C. Transmission electron microscopy (TEM) analysis suggests the maximum MnSiO{sub 3} layer thickness obtainable using metallic Mn is {approx}1.7 nm. In contrast, a {approx}1 nm partially oxidized Mn film can be fully converted to Mn silicate following thermal annealing to 400 deg. C, forming a MnSiO{sub 3} layer with a measured thickness of 2.6 nm. TEM analysis also clearly shows that MnSiO{sub 3} growth results in a corresponding reduction in the SiO{sub 2} layer thickness. It has also been shown that a fully oxidized Mn oxide thin film can be converted to Mn silicate, in the absence of metallic Mn. Based on these results it is suggested that the presence of Mn oxide species at the Mn/SiO{sub 2} interface facilitates the conversion of SiO{sub 2} to MnSiO{sub 3}, in agreement with previously published studies.

  18. Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Yamaguchi, A.; Isozumi, S.; Komiya, S.

    1985-03-01T23:59:59.000Z

    Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi

  19. The Future Computing Environments (FCE) Group at Georgia Tech is a collection of faculty and students that

    E-Print Network [OSTI]

    Abowd, Gregory D.

    , are discussed in [2]. THE GROUP: HISTORY AND EXPERTISE There are now seven full-time College of ComputingABSTRACT The Future Computing Environments (FCE) Group at Georgia Tech is a collection of faculty) Group mission is to invent and better understand what constitutes an effective, everyday partnership

  20. c Copywright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering.

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    c° Copywright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School mode or the saturation region when vDS vGS - VTO, where VTO is the threshold or pinch-off voltage parameter which accounts for the change in with drain-source voltage. Because iG ' 0 in the pinch

  1. Prioritizing Areas of the Conasauga River Sub-basin in Georgia and Tennessee for Preservation and Restoration

    E-Print Network [OSTI]

    Rosemond, Amy Daum

    controversial (Simon et al., 2007). Here we define restoration to mean direct modification of stream channels. Because both land preservation and stream restoration are expensive tools, there is a general public and Restoration SETH J. WENGER1,*, MEGAN M. HAGLER2, AND BYRON J. FREEMAN3 1University of Georgia River Basin

  2. Georgia Southern University Career Services Williams Center (912) 478-5197 www.georgiasouthern.edu/career/ Explore. Experience. Excel.

    E-Print Network [OSTI]

    Hutcheon, James M.

    · Consulting Engineering Firms · Utility Companies · Private Laboratories · Industrial Firms · Manufacturing.thegeorgiaengineer.com/ · American Council of Engineering Companies www.acec.org · Georgia Chamber of Commerce www://www.aeecenter.org/ · American Solar Energy Society http://www.ases.org/ · American Nuclear Society http://www.new.ans.org/ GSU

  3. Materials in Extreme Dynamic Environments Georgia Tech has a unique combination of experimental facilities and modeling and

    E-Print Network [OSTI]

    Li, Mo

    response of materials at various critical length and time scales emphasizes both highMaterials in Extreme Dynamic Environments Georgia Tech has a unique combination of experimental facilities and modeling and simulation capabilities to explore the behavior of materials subjected to high

  4. Digital Media Tenure Track Position Georgia Tech's School of Literature, Media, and Communication (LMC), which provides diverse

    E-Print Network [OSTI]

    Li, Mo

    Digital Media Tenure Track Position Georgia Tech's School of Literature, Media, and Communication Digital Media tenure track position at the rank of Assistant Professor, beginning in the fall of 2013. We's Computational Media and Digital Media programs. A Ph.D. in an appropriate field is required (e.g. digital media

  5. Magnetic coupling in neutral and charged Cr{sub 2}, Mn{sub 2}, and CrMn dimers

    SciTech Connect (OSTI)

    Desmarais, N. [Institut de Physique Experimentale, Ecole Polytechnique Federale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, (Switzerland)] [Institut de Physique Experimentale, Ecole Polytechnique Federale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, (Switzerland); Reuse, F. A. [Institut de Physique Experimentale, Ecole Polytechnique Federale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, (Switzerland)] [Institut de Physique Experimentale, Ecole Polytechnique Federale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, (Switzerland); Khanna, S. N. [Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284-2000 (United States)] [Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284-2000 (United States)

    2000-04-01T23:59:59.000Z

    Theoretical ab initio studies of neutral, cationic and anionic Cr{sub 2}, Mn{sub 2}, and CrMn dimers have been carried out to explore the progression of magnetic coupling with the number of electrons. It is shown that while Cr{sub 2} and Cr{sub 2}{sup -} have antiferromagnetically coupled atomic spins, Cr{sub 2}{sup +} has a ferromagnetic ground state closely followed by an antiferromagnetic state. On the other hand, all Mn{sub 2} dimers are ferromagnetic, irrespective of the charge. The neutral CrMn is ferrimagnetic while the charged CrMn are antiferromagnetic. In all cases, the charged dimers are found to be more stable than the neutral ones. The results are compared with available calculations and experiments and the difficulties associated with theoretical description and the experimental interpretations are discussed. (c) 2000 American Institute of Physics.

  6. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  7. AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh

    E-Print Network [OSTI]

    Itoh, Tatsuo

    AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh Department-mail: ykchung@ee.ucla.edu Abstract - This paper presents the first single-ended AlGaN/GaN heterojunction field, respectively. For the frequency doubler with 1mm gate periphery AlGaN/GaN HFET, conversion gain of 0.17 d

  8. Materials Science and Engineering B59 (1999) 319322 Microcalorimetric absorption spectroscopy in GaNAlGaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    1999-01-01T23:59:59.000Z

    Microcalorimetric measurements of small absorption coefficients have been performed on thin GaN­AlGaN quantum wells in GaN­AlGaN quantum wells Axel Go¨ldner a, *, Axel Hoffmann a , Bernard Gil b , Pierre Lefebvre b at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily

  9. Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors

    E-Print Network [OSTI]

    Dietz, Nikolaus

    substrate. As shown in Fig. 1(a), the device structures consist of a 0.2 m n+ -GaN top contact (emitter.1117/12.828156 Proc. of SPIE Vol. 7467 74670W-1 #12;(a) Sapphire Substrate n GaN Bottom Contact AlxGa1-xN Barrier n GaNAl fraction induced effects on the capacitance characteristics of n+ -GaN/AlxGa1-xN IR detectors

  10. Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

    SciTech Connect (OSTI)

    Koh, Inoue; Yamane, Yasuro; Shiojima, Kenji [NTT LSI Lab., Kanagawa (Japan)] [and others

    1995-12-31T23:59:59.000Z

    This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.

  11. Results of a baseflow tritium survey of surface water in Georgia across from the Savannah River Site

    SciTech Connect (OSTI)

    Nichols, R.L.

    1993-03-03T23:59:59.000Z

    In October 1991 the Georgia Department of Natural Resources (GDNR) issued a press release notifying the public that tritium had been measured in elevated levels (1,200 - 1,500 pCi/1) in water samples collected from drinking water wells in Georgia across from the Savannah River Site in Aiken Co. South Carolina. None of the elevated results were above the Primary Drinking Water Standard for tritium of 20,000 pCi/l. The GDNR initiated 2 surveys to determine the source and extent of elevated tritium: (1) baseflow survey of surface water quality, and (2) well evaluation program. Results from the 2 surveys indicate that the tritium measured in groundwater wells in Georgia is not the result of a groundwater flow from South Carolina under the Savannah River and into Georgia. Atmospheric transport and consequent rainout and infiltration has resulted in an increase of tritium in the water-table aquifer in the vicinity. Water samples collected from drinking water wells believed to have been installed in the aquifer beneath the water-table aquifer were actually from the shallower water-table aquifer. Water samples collected from the wells contain the amount of tritium expected for the water-table aquifer in the sample area. The measured tritium levels in the well samples and baseflow samples do not exceed Primary Drinking Water Standards. Tritium levels in the water-table in Georgia will decline as the atmospheric releases from SRS decline, tritium undergoes natural decay, and infiltration water with less tritium flushes through the subsurface.

  12. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  13. Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy

    E-Print Network [OSTI]

    in a highly defective GaAs layer.as5 Recently, InGaP light-emitting diodes have been fabricated on Si using

  14. High-efficiency radiation-resistant InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T. [Toyota Technological Inst., Tempaku, Nagoya (Japan); [Japan Energy Corp., Toda, Saitama (Japan); Yamaguchi, M.; Taylor, S.J. [Toyota Technological Inst., Tempaku, Nagoya (Japan); Ikeda, E.; Agui, T.; Kurita, H. [Japan Energy Corp., Toda, Saitama (Japan)

    1997-12-31T23:59:59.000Z

    A world-record efficiency of 26.9% (AM0, 28 C) has been obtained for InGaP/GaAs tandem solar cells fabricated by the MOCVD method. The radiation resistance of the InGaP/GaAs tandem solar cells has also been evaluated following 1 MeV electron irradiation. Degradation in the tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell, which features a highly doped base layer. Similar radiation-resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. However, some recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination of forward bias, which causes defect annealing in InGaP cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10{sup 15} electrons cm{sup {minus}2}) has been examined.

  15. Sampling and Quality Assurance Plan Little Commissioner Creek, Wilkinson County Georgia

    E-Print Network [OSTI]

    Rosemond, Amy Daum

    ) 946-4394 fsenn@wilkinsoncounty.net Kenneth L. Turner Mayor City of Gordon PO Box 387 Gordon, GA 31031) 946-1122 Fax (478) 946-4394 Paul Vendrell UGA Feed and Environmental Water Lab Agricultural Services

  16. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  17. Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

    E-Print Network [OSTI]

    Alpay, S. Pamir

    Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple InxGa1-xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with ½1210InGaN//½1210GaN and ½0001InGaN//½0001GaN epitaxial

  18. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01T23:59:59.000Z

    Mn-Si (red squares) and Mn-Ge distances (blue circles) d asof the number of Si or Ge nearest neighbours N c ; (c) localthree Mn atoms with different N c in a-Mn 0.094 Ge 0.906 .

  19. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  20. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. [National Kaohsiung Normal University, Department of Electronic Engineering (China)], E-mail: jhtsai@nknucc.nknu.edu.tw; Chiu, S.-Y.; Lour, W.-S. [National Taiwan Ocean University, Department of Electrical Engineering (China); Guo, D.-F. [Air Force Academy, Department of Electronic Engineering (China)

    2009-07-15T23:59:59.000Z

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  1. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  2. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2013-05-13T23:59:59.000Z

    Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

  3. InGaN/GaN single-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)

    2012-06-11T23:59:59.000Z

    We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.

  4. Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona

    E-Print Network [OSTI]

    Anderson, Timothy J.

    be grown at lower temperature than by CVD. As example, ALD growth of device quality GaAs, GaP, and InGaP

  5. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  6. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11T23:59:59.000Z

    AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  7. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    work force.. The University of Georgia Cooperative Extension Service College of Agricultural BY REDUCING HEAT LOSSES The winter months pose numerous problems and stresses on poultry growers. Rising fuel costs coupled with increased fuel consumption particularly can pose economic hardships

  8. InGaAsP/InGaP buried heterostructure lasers at 810 nm

    SciTech Connect (OSTI)

    Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.

    1984-12-01T23:59:59.000Z

    InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.

  9. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  10. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01T23:59:59.000Z

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  11. The structure of GaAs/Si(211) heteroepitaxial layers

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.

    1985-05-01T23:59:59.000Z

    Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.

  12. Over 30{percent} efficient InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H. [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan); Ohmori, M. [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)] [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)

    1997-01-01T23:59:59.000Z

    A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28{percent} is realized with a practical large area of 4 cm{sup 2} under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated current in the GaAs bottom cell. {copyright} {ital 1997 American Institute of Physics.}

  13. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  14. Effects of the Georgia flood of `94 on Lake Blackshear Dam

    SciTech Connect (OSTI)

    Findlay, R.C.; Northrop, J.H. [Northrop, Devine & Tarbell, Inc., Portland, ME (United States); Crisp, R.L. Jr. [and others

    1995-12-31T23:59:59.000Z

    Tropical Storm Alberto produced record rainfall in central Georgia in early July, 1994. The area drains into Lake Blackshear, formed in the Flint River by Lake Blackshear Dam. The level of the lake rose 3.5 m (11.5 ft) above normal and caused the worst flooding of the area in recorded history. The north embankment of the dam was overtopped, causing a 215 m (700 ft) breach. Prior to the breach, a few concentrated boils were observed in the tailwater downstream of the non-breached portion of the dam. This portion remained intact through the flood, but the presence of the boils raised questions regarding its integrity. The effects of the flood on the north embankment are discussed, as well as the geotechnical investigation conducted to assess subsurface conditions at the breach and intact portions and the plan for remediation.

  15. Attir Khalid William Singhose

    E-Print Network [OSTI]

    Singhose, William

    Department of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0405 David Frakes 4

  16. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14T23:59:59.000Z

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  17. Cumulative Effects Guidance 2007 MnDOT Environmental

    E-Print Network [OSTI]

    Minnesota, University of

    relevant for actions requiring an environmental impact statement § Analysis for projects processed as EACumulative Effects Guidance 2007 MnDOT Environmental Stewardship & Streamlining Workshop Presented by Dave Gamble Federal Highway Administration Resource Center Environmental Technical Service Team #12

  18. PRECIPITATION-STRENGTHENED AUSTENITIC FE-MN-TI ALLOYS

    E-Print Network [OSTI]

    Chiang, K.-M.

    2010-01-01T23:59:59.000Z

    energy spectrums showing that precipitates are rich in titanium, andtitanium additions can reduce the austenitic stacking fault energyfault energy of the Fe-Mn austenite is lowered by titanium

  19. PHYSICAL REVIEW B 84, 245306 (2011) Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    2011-01-01T23:59:59.000Z

    de- vices by using dilute magnetic semiconductors (DMSs) are facing difficulties due to the lack a transition metal (TM) compound (to form a condensed magnetic semiconductor) or a TM.2,3 Interest- ingly

  20. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    with the active thermoelectric cooling implemented on the same material system can improve the device performance, for the pro- posed cooling system should also be based on GaN. To real- ize this, the high-efficiency Ga,6 Great progress has been achieved in GaN-based microwave technology. GaN transistors with very high