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1

Freeport, TX Natural Gas LNG Imports (Price) From Nigeria (Dollars...  

U.S. Energy Information Administration (EIA) Indexed Site

Freeport, TX Natural Gas LNG Imports (Price) From Nigeria (Dollars per Thousand Cubic Feet) Freeport, TX Natural Gas LNG Imports (Price) From Nigeria (Dollars per Thousand Cubic...

2

Price Liquefied Freeport, TX Natural Gas Exports Price to United...  

Gasoline and Diesel Fuel Update (EIA)

United Kingdom (Dollars per Thousand Cubic Feet) Price Liquefied Freeport, TX Natural Gas Exports Price to United Kingdom (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1...

3

Freeport, TX Exports to India Liquefied Natural Gas (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Exports to India Liquefied Natural Gas (Million Cubic Feet) Freeport, TX Exports to India Liquefied Natural Gas (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct...

4

Freeport, TX Natural Gas Liquefied Natural Gas Imports from Trinidad...  

Gasoline and Diesel Fuel Update (EIA)

Trinidad and Tobago (Million Cubic Feet) Freeport, TX Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug...

5

Freeport, TX Liquefied Natural Gas Imports from Yemen (Million...  

Annual Energy Outlook 2012 (EIA)

from Yemen (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Imports from Yemen (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,869 3,108...

6

Freeport, TX Liquefied Natural Gas Imports From Peru (Million...  

Annual Energy Outlook 2012 (EIA)

From Peru (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Imports From Peru (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,175 3,338 3,262...

7

Freeport, TX Natural Gas Liquefied Natural Gas Imports from Egypt...  

Gasoline and Diesel Fuel Update (EIA)

Egypt (Million Cubic Feet) Freeport, TX Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,969 -...

8

Price Liquefied Freeport, TX Natural Gas Exports Price to Japan...  

Gasoline and Diesel Fuel Update (EIA)

Japan (Dollars per Thousand Cubic Feet) Price Liquefied Freeport, TX Natural Gas Exports Price to Japan (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4...

9

Freeport, TX Liquefied Natural Gas Exports to Brazil (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

to Brazil (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to Brazil (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,581 2012 2,601...

10

Freeport, TX Liquefied Natural Gas Exports to South Korea (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

South Korea (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to South Korea (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,157...

11

Freeport, TX Natural Gas Liquefied Natural Gas Imports (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Imports (Million Cubic Feet) Freeport, TX Natural Gas Liquefied Natural Gas Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5...

12

Price of Freeport, TX Natural Gas LNG Imports (Dollars per Thousand...  

U.S. Energy Information Administration (EIA) Indexed Site

Freeport, TX Natural Gas LNG Imports (Dollars per Thousand Cubic Feet) Price of Freeport, TX Natural Gas LNG Imports (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2...

13

Mexico FL GA SC AL MS LA TX AR TN TN  

NLE Websites -- All DOE Office Websites (Extended Search)

2005 Hurricanes on the Natural Gas Industry in the Gulf of Mexico Region Mexico FL GA SC AL MS LA TX AR TN TN Katrina - Cumulative wind > 39 mph Katrina - Cumulative wind > 73 mph...

14

Freeport, Texas: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Freeport, TX) Freeport, TX) Jump to: navigation, search Equivalent URI DBpedia Coordinates 28.9541368°, -95.3596617° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":28.9541368,"lon":-95.3596617,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

15

Freeport, TX LNG Imports from All Countries  

U.S. Energy Information Administration (EIA)

U.S. Natural Gas Imports by Point of Entry (Volumes in Million Cubic Feet, Prices in Dollars per Thousand Cubic Feet)

16

Energy Department Authorizes Additional Volume at Proposed Freeport...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export...

17

Freeport, TX LNG Imports (Price) from Yemen (Dollars per Thousand...  

U.S. Energy Information Administration (EIA) Indexed Site

Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's -- 10.30...

18

Freeport, TX Natural Gas LNG Imports (Price) From Peru (Dollars...  

Annual Energy Outlook 2012 (EIA)

Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 7.44 7.38...

19

Freeport, TX Liquefied Natural Gas Imports From Peru (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's 0 0 0 2010's 6,463 9,775...

20

Freeport, TX LNG Imports from Trinidad/Tobago  

U.S. Energy Information Administration (EIA)

U.S. Natural Gas Imports by Point of Entry (Volumes in Million Cubic Feet, Prices in Dollars per Thousand Cubic Feet)

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Freeport, TX Liquefied Natural Gas Exports Price to Brazil (Dollars...  

U.S. Energy Information Administration (EIA) Indexed Site

Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's -- 12.74 11.19...

22

Energy Department Authorizes Additional Volume at Proposed Freeport LNG  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Additional Volume at Proposed Freeport Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas November 15, 2013 - 3:00pm Addthis NEWS MEDIA CONTACT (202) 586-4940 WASHINGTON - The Energy Department announced today that it has conditionally authorized Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC (Freeport) to export additional volumes of domestically produced liquefied natural gas (LNG) to countries that do not have a Free Trade Agreement (FTA) with the United States from the Freeport LNG Terminal in Quintana Island, Texas. Freeport previously received approval to export 1.4 billion cubic feet of natural gas a day (Bcf/d) of LNG from this facility to non-FTA countries on May 17, 2013. The Freeport Expansion

23

Energy Department Authorizes Additional Volume at Proposed Freeport LNG  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Energy Department Authorizes Additional Volume at Proposed Freeport Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas November 15, 2013 - 3:00pm Addthis NEWS MEDIA CONTACT (202) 586-4940 WASHINGTON - The Energy Department announced today that it has conditionally authorized Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC (Freeport) to export additional volumes of domestically produced liquefied natural gas (LNG) to countries that do not have a Free Trade Agreement (FTA) with the United States from the Freeport LNG Terminal in Quintana Island, Texas. Freeport previously received approval to export 1.4 billion cubic feet of natural gas a day (Bcf/d) of LNG from this

24

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine...

25

EIS-0487: Freeport LNG Liquefaction Project, Brazoria County, Texas |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

87: Freeport LNG Liquefaction Project, Brazoria County, Texas 87: Freeport LNG Liquefaction Project, Brazoria County, Texas EIS-0487: Freeport LNG Liquefaction Project, Brazoria County, Texas SUMMARY Federal Energy Regulatory Commission (FERC) is preparing an EIS, with DOE as a cooperating agency, to analyze the potential environmental impacts of a proposal to construct and operate the Freeport Liquefied Natural Gas (LNG) Liquefaction Project, which would expand an existing LNG import terminal on Quintana Island in Brazoria County, Texas, to enable the terminal to liquefy and export the LNG. PUBLIC COMMENT OPPORTUNITIES None available at this time. DOCUMENTS AVAILABLE FOR DOWNLOAD July 25, 2012 EIS-0487: Notice of Intent to Prepare an Environmental Impact Statement Freeport LNG Liquefaction Project, Brazoria County, Texas

26

ORDER NO. 3357: Freeport LNG | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ORDER NO. 3357: Freeport LNG ORDER NO. 3357: Freeport LNG ORDER NO. 3357: Freeport LNG ORDER CONDITIONALLY GRANTING LONG-TERM MULTI-CONTRACT AUTHORIZATION TO EXPORT LIQUEFIED NATURAL GAS BY VESSEL FROM THE FREEPORT LNG TERMINAL ON QUINTANA ISLAND, TEXAS TO NON-FREE TRADE AGREEMENT NATIONS Based on a review of the complete record and for the reasons set forth below, DOE/FE has concluded that the opponents of the FLEX Application have not demonstrated that the requested authorization will be inconsistent with the public interest and finds that the exports proposed in this Application are likely to yield net economic benefits to the United States. DOE/FE further finds that FLEX's proposed exports on behalf of other entities should be conditionally authorized at a volumetric rate not to exceed the

27

Price of Freeport, TX Natural Gas LNG Imports from Egypt (Nominal...  

Annual Energy Outlook 2012 (EIA)

Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- 4.24 2010's --...

28

Price of Freeport, TX Natural Gas LNG Imports from Trinidad and...  

Gasoline and Diesel Fuel Update (EIA)

Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 13.83 4.77 2010's -- 10.60...

29

Sugar Land, TX -  

NLE Websites -- All DOE Office Websites (Extended Search)

Petroleum Engineering Alumnus Recognized by Secretary of Energy for Work at National Lab Sugar Land, TX - The National Energy Technology Laboratory is proud to announce that...

30

Sugar Land, TX -  

NLE Websites -- All DOE Office Websites (Extended Search)

Alumnus Recognized by Secretary of Energy for Work at National Lab Sugar Land, TX - The National Energy Technology Laboratory is proud to announce that U.S. Air Force Academy...

31

Category:Amarillo, TX | Open Energy Information  

Open Energy Info (EERE)

Amarillo, TX Amarillo, TX Jump to: navigation, search Go Back to PV Economics By Location Media in category "Amarillo, TX" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Amarillo TX CPS Energy.png SVFullServiceRestauran... 62 KB SVHospital Amarillo TX CPS Energy.png SVHospital Amarillo TX... 66 KB SVLargeHotel Amarillo TX CPS Energy.png SVLargeHotel Amarillo ... 61 KB SVLargeOffice Amarillo TX CPS Energy.png SVLargeOffice Amarillo... 59 KB SVMediumOffice Amarillo TX CPS Energy.png SVMediumOffice Amarill... 62 KB SVMidriseApartment Amarillo TX CPS Energy.png SVMidriseApartment Ama... 61 KB SVOutPatient Amarillo TX CPS Energy.png SVOutPatient Amarillo ... 60 KB SVPrimarySchool Amarillo TX CPS Energy.png SVPrimarySchool Amaril... 61 KB SVQuickServiceRestaurant Amarillo TX CPS Energy.png

32

Category:Houston, TX | Open Energy Information  

Open Energy Info (EERE)

TX TX Jump to: navigation, search Go Back to PV Economics By Location Media in category "Houston, TX" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Houston TX Entergy Texas Inc..png SVFullServiceRestauran... 73 KB SVHospital Houston TX Entergy Texas Inc..png SVHospital Houston TX ... 74 KB SVLargeHotel Houston TX Entergy Texas Inc..png SVLargeHotel Houston T... 74 KB SVLargeOffice Houston TX Entergy Texas Inc..png SVLargeOffice Houston ... 74 KB SVMediumOffice Houston TX Entergy Texas Inc..png SVMediumOffice Houston... 78 KB SVMidriseApartment Houston TX Entergy Texas Inc..png SVMidriseApartment Hou... 77 KB SVOutPatient Houston TX Entergy Texas Inc..png SVOutPatient Houston T... 75 KB SVPrimarySchool Houston TX Entergy Texas Inc..png

33

US WSC TX Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

WSC TX WSC TX Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US WSC TX Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US WSC TX Site Consumption kilowatthours $0 $500 $1,000 $1,500 $2,000 US WSC TX Expenditures dollars ELECTRICITY ONLY average per household * Texas households consume an average of 77 million Btu per year, about 14% less than the U.S. average. * Average electricity consumption per Texas home is 26% higher than the national average, but similar to the amount used in neighboring states. * The average annual electricity cost per Texas household is $1,801, among the highest in the nation, although similar to other warm weather states like Florida. * Texas homes are typically newer, yet smaller in size, than homes in other parts of

34

US WSC TX Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

WSC TX WSC TX Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US WSC TX Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US WSC TX Site Consumption kilowatthours $0 $500 $1,000 $1,500 $2,000 US WSC TX Expenditures dollars ELECTRICITY ONLY average per household * Texas households consume an average of 77 million Btu per year, about 14% less than the U.S. average. * Average electricity consumption per Texas home is 26% higher than the national average, but similar to the amount used in neighboring states. * The average annual electricity cost per Texas household is $1,801, among the highest in the nation, although similar to other warm weather states like Florida. * Texas homes are typically newer, yet smaller in size, than homes in other parts of

35

D&TX  

Office of Legacy Management (LM)

*. *. ( ARGONNE RATIONAL 1-Ci3ORATORY . 1 D&TX 7. my 19, 1349 70 t. Z. ROse at L, Em &=i*p~~4 DVur;uM hLl%L ?bvs -Lcs . FReti c. c. Fqpr an2 2. E. sulu+rr fis2 S*crep t & fbQ s-e: of the ?atagel DrFAm%un !! 1 0 * the >rt &Fz=z d t& &men of ScieJce & >&7*-z 4-q 2s'; %rZion 0C the ZLLS~~~ of Science a2 31~52-37 fo2 T&imcyyg c.=A+=< he-< - ,,a uas c:cgetes ALL 12, 1SL9. Z 0 sor;~~,-~-lioi! c.jme s 'm&-go& ~WC& c ",& d*cg&A c&.6 be ciS',&Ctti 03 2.q ZLS CC the 5iiUdi; 0~ eqt&-p*t ~-3 niq b the &-CT iq95, - < less Se&,-0~22 3 wels off tze b.ckm5n' ,e ueze t& 233 &,/zip fe pe*-se a?& coL&cs El5 less t&3 c. 5z/z fo- pcxabi beta-g+iis couxezs.

36

60-day waste compatibility safety issue and final results for 244-TX DCRT, grab samples TX-95-1, TX-95-2, and TX-95-3  

Science Conference Proceedings (OSTI)

Three grab samples (TX-95-1, TX-95-2, and TX-95-3) were taken from tank 241- TX-244 riser 8 on November 7, 1995 and received by the 222-S Laboratory on that same day. Samples TX-95-1 and TX-95-2 were designated as supernate liquids, and sample TX-95-3 was designated as a supernate/sludge. These samples were analyzed to support the waste compatibility safety program. Accuracy and precision criteria were met for all analyses. No notifications were required based on sample results. This document provides the analysis to support the waste compatibility safety program.

Esch, R.A.

1996-01-01T23:59:59.000Z

37

U.S. LNG Imports from Oman  

Gasoline and Diesel Fuel Update (EIA)

GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from...

38

U.S. Natural Gas Exports to Mexico  

Gasoline and Diesel Fuel Update (EIA)

GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from...

39

U.S. LNG Imports from Brunei  

Annual Energy Outlook 2012 (EIA)

GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from...

40

DOE/EA-1650: Freeport LNG Export Project and BOG/Truck Project Environmental Assessment (May 2009)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Freeport LNG Development, L.P. Freeport LNG Development, L.P. Docket Nos. CP03-75-003, CP03-75-004, CP05-361-001, and CP05-361-002 FREEPORT LNG EXPORT PROJECT and BOG/TRUCK PROJECT Environmental Assessment Cooperating Agency: U.S. Department of Energy DOE/EA - 1650 DOE Docket No. FE-08-70-LNG MARCH 2009 FEDERAL ENERGY REGULATORY COMMISSION WASHINGTON, D.C. 20426 OFFICE OF ENERGY PROJECTS In Reply Refer To: OEP/DG2E/Gas 2 Freeport LNG Development, L.P. Docket Nos. CP03-75-003, CP03-75-004 CP05-361-001 and CP05-361-002 §375.308(x) TO THE PARTY ADDRESSED: The staff of the Federal Energy Regulatory Commission (FERC or Commission) and the Department of Energy (DOE), Office of Fossil Fuels, have prepared an environmental assessment (EA) on the liquefied natural gas (LNG) facilities proposed by

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Penitas, TX Natural Gas Pipeline Imports From Mexico (Million...  

Annual Energy Outlook 2012 (EIA)

View History: Annual Download Data (XLS File) Penitas, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Penitas, TX Natural Gas Pipeline Imports From Mexico...

42

Hidalgo, TX Natural Gas Pipeline Imports From Mexico (Million...  

Gasoline and Diesel Fuel Update (EIA)

View History: Annual Download Data (XLS File) Hidalgo, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Hidalgo, TX Natural Gas Pipeline Imports From Mexico...

43

Alamo, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...  

Gasoline and Diesel Fuel Update (EIA)

View History: Monthly Annual Download Data (XLS File) Alamo, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Alamo, TX Natural Gas Pipeline Exports to Mexico...

44

Penitas, TX Natural Gas Pipeline Exports to Mexico (Dollars per...  

U.S. Energy Information Administration (EIA) Indexed Site

View History: Monthly Annual Download Data (XLS File) Penitas, TX Natural Gas Pipeline Exports to Mexico (Dollars per Thousand Cubic Feet) Penitas, TX Natural Gas Pipeline Exports...

45

Penitas, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...  

Gasoline and Diesel Fuel Update (EIA)

View History: Monthly Annual Download Data (XLS File) Penitas, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Penitas, TX Natural Gas Pipeline Exports to Mexico...

46

Clint, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...  

Annual Energy Outlook 2012 (EIA)

View History: Monthly Annual Download Data (XLS File) Clint, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Clint, TX Natural Gas Pipeline Exports to Mexico...

47

Hidalgo, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...  

Gasoline and Diesel Fuel Update (EIA)

View History: Monthly Annual Download Data (XLS File) Hidalgo, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Hidalgo, TX Natural Gas Pipeline Exports to Mexico...

48

Alamo, TX Natural Gas Pipeline Imports From Mexico (Million Cubic...  

Gasoline and Diesel Fuel Update (EIA)

View History: Annual Download Data (XLS File) Alamo, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Alamo, TX Natural Gas Pipeline Imports From Mexico (Million...

49

Hidalgo, TX Natural Gas Pipeline Exports to Mexico (Dollars per...  

U.S. Energy Information Administration (EIA) Indexed Site

View History: Monthly Annual Download Data (XLS File) Hidalgo, TX Natural Gas Pipeline Exports to Mexico (Dollars per Thousand Cubic Feet) Hidalgo, TX Natural Gas Pipeline Exports...

50

Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price...  

Gasoline and Diesel Fuel Update (EIA)

Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars per Thousand Cubic Feet) Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars per...

51

AOCS Official Method Tx 1a-66  

Science Conference Proceedings (OSTI)

Hydroxyl Value of Epoxidized Oils AOCS Official Method Tx 1a-66 Methods Downloads Methods Downloads DEFINITION The hydroxyl value is defined as the mg of potassium hydroxide equivalent to the hydroxyl content of 1

52

TX-100 manufacturing final project report.  

DOE Green Energy (OSTI)

This report details the work completed under the TX-100 blade manufacturing portion of the Carbon-Hybrid Blade Developments: Standard and Twist-Coupled Prototype project. The TX-100 blade is a 9 meter prototype blade designed with bend-twist coupling to augment the mitigation of peak loads during normal turbine operation. This structural coupling was achieved by locating off axis carbon fiber in the outboard portion of the blade skins. The report will present the tooling selection, blade production, blade instrumentation, blade shipping and adapter plate design and fabrication. The baseline blade used for this project was the ERS-100 (Revision D) wind turbine blade. The molds used for the production of the TX-100 were originally built for the production of the CX-100 blade. The same high pressure and low pressure skin molds were used to manufacture the TX-100 skins. In order to compensate for the difference in skin thickness between the CX-100 and the TX-100, however, a new TX-100 shear web plug and mold were required. Both the blade assembly fixture and the root stud insertion fixture used for the CX-100 blades could be utilized for the TX-100 blades. A production run of seven TX-100 prototype blades was undertaken at TPI Composites during the month of October, 2004. Of those seven blades, four were instrumented with strain gauges before final assembly. After production at the TPI Composites facility in Rhode Island, the blades were shipped to various test sites: two blades to the National Wind Technology Center at the National Renewable Energy Laboratory in Boulder, Colorado, two blades to Sandia National Laboratory in Albuquerque, New Mexico and three blades to the United States Department of Agriculture turbine field test facility in Bushland, Texas. An adapter plate was designed to allow the TX-100 blades to be installed on existing Micon 65/13M turbines at the USDA site. The conclusion of this program is the kick-off of the TX-100 blade testing at the three testing facilities.

Ashwill, Thomas D.; Berry, Derek S. (TPI Composites, Inc., Warren, RI)

2007-11-01T23:59:59.000Z

53

U.S. LNG Imports from Canada  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

54

U.S. LNG Imports from Norway  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

55

U.S. LNG Imports from Equatorial Guinea  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

56

U.S. LNG Imports from Australia  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

57

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

58

U.S. LNG Imports from Other Countries  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

59

U.S. LNG Imports from Egypt  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

60

U.S. LNG Imports from Malaysia  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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61

U.S. LNG Imports from Peru  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

62

U.S. LNG Imports from Trinidad/Tobago  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

63

U.S. LNG Imports from Algeria  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

64

U.S. LNG Imports from Nigeria  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

65

U.S. LNG Imports from Qatar  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

66

U.S. LNG Imports from Yemen  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

67

U.S. Total Exports  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

68

U.S. LNG Imports from Indonesia  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

69

Category:El Paso, TX | Open Energy Information  

Open Energy Info (EERE)

El Paso, TX El Paso, TX Jump to: navigation, search Go Back to PV Economics By Location Media in category "El Paso, TX" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant El Paso TX CPS Energy.png SVFullServiceRestauran... 60 KB SVHospital El Paso TX CPS Energy.png SVHospital El Paso TX ... 65 KB SVLargeHotel El Paso TX CPS Energy.png SVLargeHotel El Paso T... 60 KB SVLargeOffice El Paso TX CPS Energy.png SVLargeOffice El Paso ... 59 KB SVMediumOffice El Paso TX CPS Energy.png SVMediumOffice El Paso... 62 KB SVMidriseApartment El Paso TX CPS Energy.png SVMidriseApartment El ... 60 KB SVOutPatient El Paso TX CPS Energy.png SVOutPatient El Paso T... 60 KB SVPrimarySchool El Paso TX CPS Energy.png SVPrimarySchool El Pas... 61 KB SVQuickServiceRestaurant El Paso TX CPS Energy.png

70

Response Robot Evaluation Exercise Disaster City, TX DAY 1 ...  

Science Conference Proceedings (OSTI)

Page 1. Response Robot Evaluation Exercise Disaster City, TX and Meeting of the ASTM International Committee on Homeland ...

2012-12-25T23:59:59.000Z

71

DOE - Office of Legacy Management -- Sutton Steele and Steele Co - TX 09  

Office of Legacy Management (LM)

Sutton Steele and Steele Co - TX 09 Sutton Steele and Steele Co - TX 09 FUSRAP Considered Sites Site: SUTTON, STEELE & STEELE CO. (TX.09) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: Sutton, Steele & Steele, Inc. TX.09-1 Location: Dallas , Texas TX.09-1 Evaluation Year: 1993 TX.09-2 Site Operations: Conducted operations to separate Uranium shot by means of air float tables and conducted research to air classify C-Liner and C-Special materials. TX.09-1 TX.09-3 TX.09-4 TX.09-5 Site Disposition: Eliminated - Potential for contamination considered remote TX.09-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium TX.09-4 TX.09-5 Radiological Survey(s): Health and Safety Monitoring TX.09-4 TX.09-5 Site Status: Eliminated from consideration under FUSRAP

72

CleanTX Foundation | Open Energy Information  

Open Energy Info (EERE)

CleanTX Foundation CleanTX Foundation Address 3925 W Braker Lane Place Austin, Texas Zip 78759 Region Texas Area Notes Promotes entrepreneurship in the field of clean technology, by providing educational forums, content, awareness and networking opportunities Website http://cleantx.org/ Coordinates 30.396989°, -97.735768° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":30.396989,"lon":-97.735768,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

73

U.S. LNG Imports from Oman  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

74

U.S. LNG Imports from Australia  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

75

U.S. LNG Imports from Nigeria  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

76

U.S. LNG Imports from Yemen  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

77

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

78

U.S. LNG Imports from Algeria  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

79

U.S. Total Exports  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

80

U.S. LNG Imports from Indonesia  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

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81

U.S. LNG Imports from Brunei  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

82

U.S. LNG Imports from Egypt  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

83

U.S. LNG Imports from Canada  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

84

U.S. LNG Imports from Trinidad/Tobago  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

85

U.S. LNG Imports from Peru  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

86

U.S. LNG Imports from Malaysia  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

87

U.S. Natural Gas Imports by Pipeline from Mexico  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

88

,"Hidalgo, TX Natural Gas Pipeline Imports From Mexico (MMcf...  

U.S. Energy Information Administration (EIA) Indexed Site

Of Series","Frequency","Latest Data for" ,"Data 1","Hidalgo, TX Natural Gas Pipeline Imports From Mexico (MMcf)",1,"Annual",2012 ,"Release Date:","172014" ,"Next...

89

,"Penitas, TX Natural Gas Pipeline Imports From Mexico (MMcf...  

U.S. Energy Information Administration (EIA) Indexed Site

Of Series","Frequency","Latest Data for" ,"Data 1","Penitas, TX Natural Gas Pipeline Imports From Mexico (MMcf)",1,"Annual",2002 ,"Release Date:","172014" ,"Next...

90

,"Alamo, TX Natural Gas Pipeline Imports From Mexico (MMcf)"  

U.S. Energy Information Administration (EIA) Indexed Site

Of Series","Frequency","Latest Data for" ,"Data 1","Alamo, TX Natural Gas Pipeline Imports From Mexico (MMcf)",1,"Annual",2012 ,"Release Date:","172014" ,"Next...

91

,"Eagle Pass, TX Natural Gas Pipeline Exports to Mexico (MMcf...  

U.S. Energy Information Administration (EIA) Indexed Site

Eagle Pass, TX Natural Gas Pipeline Exports to Mexico (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest...

92

,"El Paso, TX Natural Gas Pipeline Imports From Mexico (MMcf...  

U.S. Energy Information Administration (EIA) Indexed Site

Of Series","Frequency","Latest Data for" ,"Data 1","El Paso, TX Natural Gas Pipeline Imports From Mexico (MMcf)",1,"Annual",2002 ,"Release Date:","12122013"...

93

EDF Industrial Power Services (TX), LLC | Open Energy Information  

Open Energy Info (EERE)

Power Services (TX), LLC Power Services (TX), LLC Jump to: navigation, search Name EDF Industrial Power Services (TX), LLC Place Texas Utility Id 56315 Utility Location Yes Ownership R NERC ERCOT Yes ISO Ercot Yes Activity Retail Marketing Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Industrial: $0.0394/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=EDF_Industrial_Power_Services_(TX),_LLC&oldid=410609" Categories: EIA Utility Companies and Aliases

94

Golden Pass, TX Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

from Qatar (Million Cubic Feet) Golden Pass, TX Natural Gas Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011...

95

Hidalgo, TX Natural Gas Pipeline Imports From Mexico (Dollars...  

Annual Energy Outlook 2012 (EIA)

Dollars per Thousand Cubic Feet) Hidalgo, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

96

Penitas, TX Natural Gas Pipeline Imports From Mexico (Dollars...  

Annual Energy Outlook 2012 (EIA)

Dollars per Thousand Cubic Feet) Penitas, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

97

Alamo, TX Natural Gas Pipeline Imports From Mexico (Dollars per...  

Annual Energy Outlook 2012 (EIA)

Dollars per Thousand Cubic Feet) Alamo, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7...

98

DOE - Office of Legacy Management -- Pantex Sewage Reservoir - TX 03  

Office of Legacy Management (LM)

Pantex Sewage Reservoir - TX 03 Pantex Sewage Reservoir - TX 03 FUSRAP Considered Sites Site: Pantex Sewage Reservoir (TX.03 ) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: This site is one of a group of 77 FUSRAP considered sites for which few, if any records are available in their respective site files to provide an historical account of past operations and their relationship, if any, with MED/AEC operations. Reviews of contact lists, accountable station lists, health and safety records and other documentation of the period do not provide sufficient information to warrant further search of historical records for information on these sites. These site files remain "open" to

99

McAllen, TX Natural Gas Pipeline Imports From Mexico (Million...  

Annual Energy Outlook 2012 (EIA)

View History: Annual Download Data (XLS File) McAllen, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) McAllen, TX Natural Gas Pipeline Imports From Mexico...

100

McAllen, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...  

Gasoline and Diesel Fuel Update (EIA)

View History: Monthly Annual Download Data (XLS File) McAllen, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) McAllen, TX Natural Gas Pipeline Exports to Mexico...

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

TEXAS TECH UNIVERSITY Lubbock, TX 79409-1108  

E-Print Network (OSTI)

TEXAS TECH UNIVERSITY Box 41108 Lubbock, TX 79409-1108 Name (as shown on your income tax return by the appropriate ownership type that applies to you or your business. I L *Texas Limited Partnership: SSN & Social Security Number (SSN) T *Texas Corporation Owners Name

Westfall, Peter H.

102

Double-contained receiver tank 244-TX, grab samples, 244TX-97-3 analytical results for the final report  

Science Conference Proceedings (OSTI)

This document is the final report for the double-contained receiver tank (DCRT) 244-TX grab samples. Three grabs samples were collected from riser 8 on May 29, 1997. Analyses were performed in accordance with the Compatibility Grab Sampling and Analysis Plan (TSAP) and the Data Quality Objectives for Tank Farms Waste Compatibility Program (DQO). The analytical results are presented in a table.

Esch, R.A.

1997-08-13T23:59:59.000Z

103

Ga Air Compressor, Ga Air Compressor Products, Ga Air ...  

U.S. Energy Information Administration (EIA)

Ga Air Compressor, You Can Buy Various High Quality Ga Air Compressor Products from Global Ga Air Compressor Suppliers and Ga Air Compressor ...

104

GRR/Section 8-TX-c - Distributed Generation Interconnection | Open Energy  

Open Energy Info (EERE)

GRR/Section 8-TX-c - Distributed Generation Interconnection GRR/Section 8-TX-c - Distributed Generation Interconnection < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 8-TX-c - Distributed Generation Interconnection 8-TX-c - Distributed Generation Interconnection.pdf Click to View Fullscreen Contact Agencies Public Utility Commission of Texas Regulations & Policies PUCT Substantive Rule 25.211 PUCT Substantive Rule 25.212 Triggers None specified Click "Edit With Form" above to add content 8-TX-c - Distributed Generation Interconnection.pdf 8-TX-c - Distributed Generation Interconnection.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative This flowchart illustrates the process for distributed generation (DG)

105

GRR/Section 8-TX-b - ERCOT Interconnection | Open Energy Information  

Open Energy Info (EERE)

8-TX-b - ERCOT Interconnection 8-TX-b - ERCOT Interconnection < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 8-TX-b - ERCOT Interconnection 8-TX-b - ERCOT Interconnection Process.pdf Click to View Fullscreen Regulations & Policies PUCT Substantive Rule 25.198 Triggers None specified Click "Edit With Form" above to add content 8-TX-b - ERCOT Interconnection Process.pdf 8-TX-b - ERCOT Interconnection Process.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative This flowchart illustrates the procedures for interconnection with Electricity Reliability Council of Texas (ERCOT) in Texas. According to PUCT Substantive Rule 25.198, the responsibility for

106

GRR/Section 3-TX-g - Lease of Relinquishment Act Lands | Open Energy  

Open Energy Info (EERE)

3-TX-g - Lease of Relinquishment Act Lands 3-TX-g - Lease of Relinquishment Act Lands < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-TX-g - Lease of Relinquishment Act Lands 03-TX-g - Lease of Relinquishment Act Lands.pdf Click to View Fullscreen Triggers None specified Click "Edit With Form" above to add content 03-TX-g - Lease of Relinquishment Act Lands.pdf 03-TX-g - Lease of Relinquishment Act Lands.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative This flowchart illustrates the process of obtaining a geothermal lease on Relinquishment Act Lands in Texas. The Texas General Land Office (GLO) of Texas handles the leasing process on Relinquishment Act Lands through Title

107

Staubli TX-90XL robot qualification at the LLIHE.  

SciTech Connect

The Light Initiated High Explosive (LIHE) Facility uses a robotic arm to spray explosive material onto test items for impulse tests. In 2007, the decision was made to replace the existing PUMA 760 robot with the Staubli TX-90XL. A qualification plan was developed and implemented to verify the safe operating conditions and failure modes of the new system. The robot satisfied the safety requirements established in the qualification plan. A performance issue described in this report remains unresolved at the time of this publication. The final readiness review concluded the qualification of this robot at the LIHE facility.

Covert, Timothy Todd

2010-10-01T23:59:59.000Z

108

,"McAllen, TX Natural Gas Pipeline Imports From Mexico (MMcf...  

U.S. Energy Information Administration (EIA) Indexed Site

Of Series","Frequency","Latest Data for" ,"Data 1","McAllen, TX Natural Gas Pipeline Imports From Mexico (MMcf)",1,"Annual",2012 ,"Release Date:","172014" ,"Next...

109

Modal testing of the TX-100 wind turbine blade.  

DOE Green Energy (OSTI)

This test report covers the SNL modal test results for two nominally identical TX-100 wind turbine blades. The TX-100 blade design is unique in that it features a passive braking, force-shedding mechanism where bending and torsion are coupled to produce desirable aerodynamic characteristics. A specific aim of this test is to characterize the coupling between bending and torsional dynamics. The results of the modal tests and the subsequent analysis characterize the natural frequencies, damping, and mode shapes of the individual blades. The results of this report are expected to be used for model validation--the frequencies and mode shapes from the experimental analysis can be compared with those of a finite-element analysis. Damping values are included in the results of these tests to potentially improve the fidelity of numerical simulations, although numerical finite element models typically have no means of predicting structural damping characteristics. Thereafter, an additional objective of the test is achieved in evaluating the test to test and unit variation in the modal parameters of the two blades.

Reese, Sarah; Griffith, Daniel Todd; Casias, Miguel; Simmermacher, Todd William; Smith, Gregory A.

2006-05-01T23:59:59.000Z

110

U.S. Natural Gas Exports to Russia  

Gasoline and Diesel Fuel Update (EIA)

TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

111

U.S. Liquefied Natural Gas Exports to Spain  

Annual Energy Outlook 2012 (EIA)

Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

112

U.S. Liquefied Natural Gas Exports To Brazil  

Gasoline and Diesel Fuel Update (EIA)

Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

113

U.S. Liquefied Natural Gas Exports to United Kingdom  

Gasoline and Diesel Fuel Update (EIA)

Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

114

U.S. Liquefied Natural Gas Exports to Japan  

Annual Energy Outlook 2012 (EIA)

Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

115

U.S. Total Exports  

U.S. Energy Information Administration (EIA) Indexed Site

TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

116

U.S. Liquefied Natural Gas Exports to Japan  

Gasoline and Diesel Fuel Update (EIA)

TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

117

U.S. Natural Gas Exports to Portugal  

Annual Energy Outlook 2012 (EIA)

Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

118

U.S. Natural Gas Exports to Canada  

Annual Energy Outlook 2012 (EIA)

Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

119

U.S. Natural Gas Exports to Chile  

Annual Energy Outlook 2012 (EIA)

Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

120

U.S. Liquefied Natural Gas Exports To Brazil  

Gasoline and Diesel Fuel Update (EIA)

TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

U.S. Natural Gas Exports to Portugal  

Gasoline and Diesel Fuel Update (EIA)

TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

122

U.S. Liquefied Natural Gas Exports to India  

Annual Energy Outlook 2012 (EIA)

Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

123

U.S. Natural Gas Exports to Russia  

Annual Energy Outlook 2012 (EIA)

Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

124

U.S. Natural Gas Exports to Mexico  

Annual Energy Outlook 2012 (EIA)

TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

125

U.S. Liquefied Natural Gas Exports to Spain  

Annual Energy Outlook 2012 (EIA)

TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

126

U.S. Natural Gas Exports to Mexico  

Gasoline and Diesel Fuel Update (EIA)

Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

127

U.S. Total Exports  

Gasoline and Diesel Fuel Update (EIA)

Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

128

U.S. Natural Gas Exports to Chile  

Annual Energy Outlook 2012 (EIA)

TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

129

U.S. Liquefied Natural Gas Exports to United Kingdom  

Annual Energy Outlook 2012 (EIA)

TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

130

U.S. Natural Gas Exports to China  

Annual Energy Outlook 2012 (EIA)

Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

131

U.S. Natural Gas Exports to Canada  

Annual Energy Outlook 2012 (EIA)

TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

132

U.S. Natural Gas Exports to China  

Annual Energy Outlook 2012 (EIA)

TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

133

U.S. Liquefied Natural Gas Exports to India  

Annual Energy Outlook 2012 (EIA)

TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to...

134

GRR/Section 13-TX-a - State Land Use Assessment | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 13-TX-a - State Land Use Assessment GRR/Section 13-TX-a - State Land Use Assessment < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 13-TX-a - State Land Use Assessment 13-TX-a - State Land Use Assessment.pdf Click to View Fullscreen Contact Agencies Texas General Land Office Regulations & Policies Open Beaches Act Dune Protection Act Beach Dune Rules Triggers None specified Click "Edit With Form" above to add content 13-TX-a - State Land Use Assessment.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative The Texas General Land Office (GLO) is in charge of making sure construction on the Texas coast that affects the beach and dunes is

135

GRR/Section 3-TX-e - Lease of Texas Parks & Wildlife Department Land | Open  

Open Energy Info (EERE)

TX-e - Lease of Texas Parks & Wildlife Department Land TX-e - Lease of Texas Parks & Wildlife Department Land < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-TX-e - Lease of Texas Parks & Wildlife Department Land 03-TX-e - Lease of Texas Parks & Wildlife Department Land (1).pdf Click to View Fullscreen Triggers None specified Click "Edit With Form" above to add content 03-TX-e - Lease of Texas Parks & Wildlife Department Land (1).pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative This flowchart illustrates the process of leasing Texas Parks & Wildlife Department (TPWD) land in Texas. The Texas General Land Office manages

136

GRR/Section 3-TX-d - Lease of Permanent School Fund Land | Open Energy  

Open Energy Info (EERE)

3-TX-d - Lease of Permanent School Fund Land 3-TX-d - Lease of Permanent School Fund Land < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-TX-d - Lease of Permanent School Fund Land 03-TX-d - Lease of Public School Fund Land (1).pdf Click to View Fullscreen Triggers None specified Click "Edit With Form" above to add content 03-TX-d - Lease of Public School Fund Land (1).pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative This flowchart illustrates the process of leasing Public School Fund (PSF) lands in Texas. The Texas General Land Office (GLO) oversees the leasing process for PSF lands through Title 31 of the Texas Administrative Code

137

GRR/Section 19-TX-e - Temporary Surface Water Permit | Open Energy  

Open Energy Info (EERE)

-TX-e - Temporary Surface Water Permit -TX-e - Temporary Surface Water Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-TX-e - Temporary Surface Water Permit 19-TX-e Temporary Surface Water Permit.pdf Click to View Fullscreen Contact Agencies Texas Commission on Environmental Quality Regulations & Policies Tex. Water Code § 11.138 Triggers None specified Click "Edit With Form" above to add content 19-TX-e Temporary Surface Water Permit.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative In Texas, the Texas Commission on Environmental Quality (TCEQ), or in certain instances regional TCEQ offices or local Watermasters, issue

138

GRR/Section 3-TX-f - Lease of Land Trade Lands | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-TX-f - Lease of Land Trade Lands GRR/Section 3-TX-f - Lease of Land Trade Lands < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-TX-f - Lease of Land Trade Lands 03-TX-f - Lease of Land Trade Lands.pdf Click to View Fullscreen Triggers None specified Click "Edit With Form" above to add content 03-TX-f - Lease of Land Trade Lands.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative This flowchart illustrates the process of leasing Land Trade Lands in Texas. The Texas General Land Office (GLO) administers leases on Land Trade Lands through Title 31 of the Texas Administrative Code Section 155.42.

139

CX-100 and TX-100 blade field tests.  

SciTech Connect

In support of the DOE Low Wind Speed Turbine (LWST) program two of the three Micon 65/13M wind turbines at the USDA Agricultural Research Service (ARS) center in Bushland, Texas will be used to test two sets of experimental blades, the CX-100 and TX-100. The blade aerodynamic and structural characterization, meteorological inflow and wind turbine structural response will be monitored with an array of 75 instruments: 33 to characterize the blades, 15 to characterize the inflow, and 27 to characterize the time-varying state of the turbine. For both tests, data will be sampled at a rate of 30 Hz using the ATLAS II (Accurate GPS Time-Linked Data Acquisition System) data acquisition system. The system features a time-synchronized continuous data stream and telemetered data from the turbine rotor. This paper documents the instruments and infrastructure that have been developed to monitor these blades, turbines and inflow.

Holman, Adam (USDA-Agriculture Research Service, Bushland, TX); Jones, Perry L.; Zayas, Jose R.

2005-12-01T23:59:59.000Z

140

ORNL measurements at Hanford Waste Tank TX-118  

Science Conference Proceedings (OSTI)

A program of measurements and calculations to develop a method of measuring the fissionable material content of the large waste storage tanks at the Hanford, Washington, site is described in this report. These tanks contain radioactive waste from the processing of irradiated fuel elements from the plutonium-producing nuclear reactors at the Hanford site. Time correlation and noise analysis techniques, similar to those developed for and used in the Nuclear Weapons Identification System at the Y-12 Plant in Oak Ridge, Tennessee, will be used at the Hanford site. Both ``passive`` techniques to detect the neutrons emitted spontaneously from the waste in the tank and ``active`` techniques using AmBe and {sup 252}Cf neutron sources to induce fissions will be used. This work is divided into three major tasks: (1) development of high-sensitivity neutron detectors that can selectively count only neutrons in the high {gamma} radiation fields in the tanks, (2) Monte Carlo neutron transport calculations using both the KENO and MCNP codes to plan and analyze the measurements, and (3) the measurement of time-correlated neutrons by time and frequency analysis to distinguish spontaneous fission from sources inside the tanks. This report describes the development of the detector and its testing in radiation fields at the Radiation Calibration Facility at Oak Ridge National Laboratory and in tank TX-118 at the 200 W area at Westinghouse Hanford Company.

Koehler, P.E.; Mihalczo, J.T.

1995-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

GRR/Section 11-TX-a - State Cultural Considerations Overview | Open Energy  

Open Energy Info (EERE)

GRR/Section 11-TX-a - State Cultural Considerations Overview GRR/Section 11-TX-a - State Cultural Considerations Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-TX-a - State Cultural Considerations Overview 11TXAStateCulturalConsiderationsOverview.pdf Click to View Fullscreen Contact Agencies Texas Historical Commission Regulations & Policies NRC Ch. 191: Antiquities Code CCP Ch. 49: Inquests Upon Dead Bodies Triggers None specified Click "Edit With Form" above to add content 11TXAStateCulturalConsiderationsOverview.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative 11-TX-a.1 - Have Potential Human Remains Been Discovered?

142

GRR/Section 3-TX-c - Highway Right of Way Lease | Open Energy Information  

Open Energy Info (EERE)

3-TX-c - Highway Right of Way Lease 3-TX-c - Highway Right of Way Lease < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-TX-c - Highway Right of Way Lease 03TXCEncroachmentIssues.pdf Click to View Fullscreen Contact Agencies Texas General Land Office Texas Department of Transportation Regulations & Policies 43 TAC 21.600 43 TAC 21.603 43 TAC 21.606 Triggers None specified Click "Edit With Form" above to add content 03TXCEncroachmentIssues.pdf 03TXCEncroachmentIssues.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative This flowchart illustrates the procedure for obtaining a state highway asset lease in Texas. The Texas Department of Transportation (TxDOT) may lease any highway asset.

143

McAllen, TX Natural Gas Pipeline Imports From Mexico (Dollars...  

Gasoline and Diesel Fuel Update (EIA)

Dollars per Thousand Cubic Feet) McAllen, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

144

GRR/Section 19-TX-b - New Water Right Process For Surface Water...  

Open Energy Info (EERE)

TX-b - New Water Right Process For Surface Water and Ground Water < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of...

145

GRR/Section 11-TX-c - Cultural Resource Discovery Process | Open Energy  

Open Energy Info (EERE)

-TX-c - Cultural Resource Discovery Process -TX-c - Cultural Resource Discovery Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-TX-c - Cultural Resource Discovery Process 11TXCCulturalResourceDiscoveryProcess.pdf Click to View Fullscreen Contact Agencies Texas Historical Commission Regulations & Policies Sec. 191: Antiquities Code Triggers None specified Click "Edit With Form" above to add content 11TXCCulturalResourceDiscoveryProcess.pdf 11TXCCulturalResourceDiscoveryProcess.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative 11-TX-c.1 - Is the Project Located on State or Local Public Land? Before breaking ground at a project location on state or local public land,

146

EIS-0412: Federal Loan Guarantee to Support Construction of the TX Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

12: Federal Loan Guarantee to Support Construction of the TX 12: Federal Loan Guarantee to Support Construction of the TX Energy LLC, Industrial Gasification Facility near Beaumont, Texas EIS-0412: Federal Loan Guarantee to Support Construction of the TX Energy LLC, Industrial Gasification Facility near Beaumont, Texas Overview The Department of Energy is assessing the potential environmental impacts for its proposed action of issuing a Federal loan guarantee to TX Energy, LLC (TXE). TXE submitted an application to DOE under the Federal loan guarantee program pursuant to the Energy Policy Act of 2005 (EPAct 2005) to support construction of the TXE industrial Gasification Facility near Beaumont, Texas. TXE is a subsidiary of Eastman Chemical Company (Eastman) and proposes to develop the Facility on a 417-acre parcel of land. The Facility would

147

RCRA Assessment Plan for Single-Shell Tank Waste Management Area TX-TY  

SciTech Connect

WMA TX-TY contains underground, single-shell tanks that were used to store liquid waste that contained chemicals and radionuclides. Most of the liquid has been removed, and the remaining waste is regulated under the RCRA as modified in 40 CFR Part 265, Subpart F and Washington States Hazardous Waste Management Act . WMA TX-TY was placed in assessment monitoring in 1993 because of elevated specific conductance. A groundwater quality assessment plan was written in 1993 describing the monitoring activities to be used in deciding whether WMA TX-TY had affected groundwater. That plan was updated in 2001 for continued RCRA groundwater quality assessment as required by 40 CFR 265.93 (d)(7). This document further updates the assessment plan for WMA TX-TY by including (1) information obtained from ten new wells installed at the WMA after 1999 and (2) information from routine quarterly groundwater monitoring during the last five years. Also, this plan describes activities for continuing the groundwater assessment at WMA TX TY.

Horton, Duane G.

2007-03-26T23:59:59.000Z

148

GRR/Section 18-TX-a - Underground Storage Tank Process | Open Energy  

Open Energy Info (EERE)

TX-a - Underground Storage Tank Process TX-a - Underground Storage Tank Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 18-TX-a - Underground Storage Tank Process 18TXAUndergroundStorageTanks (1).pdf Click to View Fullscreen Contact Agencies Texas Commission on Environmental Quality Regulations & Policies 30 Texas Administrative Code 334 - Underground and Aboveground Storage Tanks 30 Texas Administrative Code 37 - Financial Assurance for Petroleum Underground Storage Tanks Triggers None specified Click "Edit With Form" above to add content 18TXAUndergroundStorageTanks (1).pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range.

149

GRR/Section 3-TX-a - State Geothermal Lease | Open Energy Information  

Open Energy Info (EERE)

3-TX-a - State Geothermal Lease 3-TX-a - State Geothermal Lease < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-TX-a - State Geothermal Lease 03TXAStateGeothermalLease.pdf Click to View Fullscreen Contact Agencies Texas General Land Office Regulations & Policies Texas Natural Resources Code 31 TAC 9.22 31 TAC 13.33 31 TAC 13.62 31 TAC 155.42 Triggers None specified Click "Edit With Form" above to add content 03TXAStateGeothermalLease.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative This flowchart illustrates the process of obtaining a state geothermal lease from the state of Texas. The Texas General Land Office manages

150

GRR/Section 19-TX-a - Water Access and Water Issues Overview | Open Energy  

Open Energy Info (EERE)

9-TX-a - Water Access and Water Issues Overview 9-TX-a - Water Access and Water Issues Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-TX-a - Water Access and Water Issues Overview 19TXAWaterAccessAndWaterRightsIssuesOverview.pdf Click to View Fullscreen Contact Agencies Texas Commission on Environmental Quality Regulations & Policies Tex. Water Code § 11 Triggers None specified Click "Edit With Form" above to add content 19TXAWaterAccessAndWaterRightsIssuesOverview.pdf 19TXAWaterAccessAndWaterRightsIssuesOverview.pdf 19TXAWaterAccessAndWaterRightsIssuesOverview.pdf 19TXAWaterAccessAndWaterRightsIssuesOverview.pdf Flowchart Narrative In the late 1960's Texas transitioned its water law system, switching

151

GRR/Section 19-TX-b - New Water Right Process For Surface Water and Ground  

Open Energy Info (EERE)

TX-b - New Water Right Process For Surface Water and Ground TX-b - New Water Right Process For Surface Water and Ground Water < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-TX-b - New Water Right Process For Surface Water and Ground Water 19TXBNewWaterRightProcessForSurfaceWaterAndGroundWater.pdf Click to View Fullscreen Contact Agencies Texas Commission on Environmental Quality Texas Water Development Board Regulations & Policies Tex. Water Code § 11 Triggers None specified Click "Edit With Form" above to add content 19TXBNewWaterRightProcessForSurfaceWaterAndGroundWater.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range.

152

GRR/Section 11-TX-b - Human Remains Process | Open Energy Information  

Open Energy Info (EERE)

1-TX-b - Human Remains Process 1-TX-b - Human Remains Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-TX-b - Human Remains Process 11TXBHumanRemainsProcess.pdf Click to View Fullscreen Regulations & Policies CCP Art. 49 Triggers None specified Click "Edit With Form" above to add content 11TXBHumanRemainsProcess.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative This flowchart illustrates the procedure a developer must follow when human remains are discovered on or near the project site. Local law enforcement must conduct an investigation into the death of the person, and is the

153

GRR/Section 14-TX-c - Underground Injection Control Permit | Open Energy  

Open Energy Info (EERE)

TX-c - Underground Injection Control Permit TX-c - Underground Injection Control Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-TX-c - Underground Injection Control Permit Pages from 14TXCUndergroundInjectionControlPermit (4).pdf Click to View Fullscreen Contact Agencies Railroad Commission of Texas Texas Commission on Environmental Quality Regulations & Policies Tex. Water Code § 27 16 TAC 3.9 46 TAC 3.46 16 TAC 3.30 - MOU between the RRC and the TCEQ Triggers None specified Click "Edit With Form" above to add content Pages from 14TXCUndergroundInjectionControlPermit (4).pdf Pages from 14TXCUndergroundInjectionControlPermit (4).pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range.

154

GRR/Section 7-TX-b - REC Generator | Open Energy Information  

Open Energy Info (EERE)

TX-b - REC Generator TX-b - REC Generator < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 7-TX-b - REC Generator 07TXBRECGeneratorCertification.pdf Click to View Fullscreen Contact Agencies Public Utility Commission of Texas Regulations & Policies Goal for Renewable Energy, PUCT Substantive Rule 25.173 Triggers None specified Click "Edit With Form" above to add content 07TXBRECGeneratorCertification.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative This flowchart illustrates the application and approval process for participating in the Renewable Energy Credit program in Texas.

155

GRR/Section 19-TX-c - Surface Water Permit | Open Energy Information  

Open Energy Info (EERE)

19-TX-c - Surface Water Permit 19-TX-c - Surface Water Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-TX-c - Surface Water Permit 19TXCSurfaceWaterPermit.pdf Click to View Fullscreen Contact Agencies Texas Commission on Environmental Quality Regulations & Policies Tex. Water Code § 11 30 TAC 295 30 TAC 297 Triggers None specified Click "Edit With Form" above to add content 19TXCSurfaceWaterPermit.pdf 19TXCSurfaceWaterPermit.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative In Texas, the Texas Commission on Environmental Quality (TCEQ) issues surface water permits. Under, Tex. Water Code § 11, surface water permits

156

GRR/Section 5-TX-a - Drilling and Well Development | Open Energy  

Open Energy Info (EERE)

GRR/Section 5-TX-a - Drilling and Well Development GRR/Section 5-TX-a - Drilling and Well Development < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 5-TX-a - Drilling and Well Development 05TXADrillingAndWellDevelopment.pdf Click to View Fullscreen Contact Agencies Railroad Commission of Texas Texas Water Development Board Regulations & Policies 16 TAC 3.5: Application To Drill, Deepen, Reenter, or Plug Back 16 TAC 3.78: Fees and Financial Security Requirements 16 TAC 3.37: Statewide Spacing Rule 16 TAC 3.38: Well Densities 16 TAC 3.39: Proration and Drilling Units: Contiguity of Acreage and Exception 16 TAC 3.33: Geothermal Resource Production Test Forms Required Triggers None specified Click "Edit With Form" above to add content

157

GRR/Section 14-TX-b - Texas NPDES Permitting Process | Open Energy  

Open Energy Info (EERE)

14-TX-b - Texas NPDES Permitting Process 14-TX-b - Texas NPDES Permitting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-TX-b - Texas NPDES Permitting Process 14TXBTexasNPDESPermittingProcess (4).pdf Click to View Fullscreen Contact Agencies Railroad Commission of Texas United States Environmental Protection Agency Regulations & Policies Tex. Water Code § 26.131(b) 16 TAC 3.8 Memorandum of Understanding between the RRC and the TCEQ 16 TAC 3.30 Triggers None specified Click "Edit With Form" above to add content 14TXBTexasNPDESPermittingProcess (4).pdf 14TXBTexasNPDESPermittingProcess (4).pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative

158

,"Galvan Ranch, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)"  

U.S. Energy Information Administration (EIA) Indexed Site

Galvan Ranch, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)" Galvan Ranch, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Galvan Ranch, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)",1,"Annual",2012 ,"Release Date:","12/12/2013" ,"Next Release Date:","1/7/2014" ,"Excel File Name:","nga_epg0_irp_ygrt-nmx_mmcfa.xls" ,"Available from Web Page:","http://tonto.eia.gov/dnav/ng/hist/nga_epg0_irp_ygrt-nmx_mmcfa.htm" ,"Source:","Energy Information Administration"

159

GRR/Section 8-TX-a - Transmission Siting | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 8-TX-a - Transmission Siting GRR/Section 8-TX-a - Transmission Siting < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 8-TX-a - Transmission Siting 08TXATransmissionSiting.pdf Click to View Fullscreen Contact Agencies Public Utility Commission of Texas Regulations & Policies PUCT Substantive 25.83: Transmission Construction Reports PUCT Substantive Rule 25.101: Certification Criteria Triggers None specified Click "Edit With Form" above to add content 08TXATransmissionSiting.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative Transmission siting is handled by the Public Utility Commission of Texas

160

GRR/Section 6-TX-a - Extra-Legal Vehicle Permitting Process | Open Energy  

Open Energy Info (EERE)

6-TX-a - Extra-Legal Vehicle Permitting Process 6-TX-a - Extra-Legal Vehicle Permitting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 6-TX-a - Extra-Legal Vehicle Permitting Process 06TXAExtraLegalVehiclePermittingProcess.pdf Click to View Fullscreen Contact Agencies Texas Department of Motor Vehicles Texas Department of Transportation Regulations & Policies Tex. Transportation Code § 621 Tex. Transportation Code § 622 Tex. Transportation Code § 623 43 TAC 219 Triggers None specified Click "Edit With Form" above to add content 06TXAExtraLegalVehiclePermittingProcess.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range.

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

GRR/Section 19-TX-d - Transfer of Surface Water Right | Open Energy  

Open Energy Info (EERE)

19-TX-d - Transfer of Surface Water Right 19-TX-d - Transfer of Surface Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-TX-d - Transfer of Surface Water Right 19TXDTransferOfWaterRight.pdf Click to View Fullscreen Contact Agencies Texas Commission on Environmental Quality Regulations & Policies Tex. Water Code § 11 30 TAC 297.81 30 TAC 297.82 30 TAC 297.83 Triggers None specified Click "Edit With Form" above to add content 19TXDTransferOfWaterRight.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative Texas water law allows surface water rights to be transferred from one party to another. (Tex. Water Code § 11)

162

Hanford Tank Farms Vadose Zone, Addendum to the TX Tank Farm Report  

Science Conference Proceedings (OSTI)

This addendum to the TX Tank Farm Report (GJO-97-13-TAR, GJO-HAN-11) published in September 1997 incorporates the results of high-rate and repeat logging activities along with shape factor analysis of the logging data. A high-rate logging system was developed and deployed in the TX Tank Farm to measure cesium-137 concentration levels in high gamma flux zones where the spectral gamma logging system was unable to collect usable data because of high dead times and detector saturation. This report presents additional data and revised visualizations of subsurface contaminant distribution in the TX Tank Farm at the DOE Hanford Site in the state of Washington.

Spatz, R.

2000-08-01T23:59:59.000Z

163

GRR/Section 12-TX-a - Flora and Fauna Considerations | Open Energy  

Open Energy Info (EERE)

TX-a - Flora and Fauna Considerations TX-a - Flora and Fauna Considerations < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 12-TX-a - Flora and Fauna Considerations 12TXAFloraAndFaunaConsiderations.pdf Click to View Fullscreen Contact Agencies Texas Parks and Wildlife Department Regulations & Policies Texas Parks and Wildlife Code § 68 31 TAC 65.175 31 TAC 65.176 31 TAC 65.173 Triggers None specified Click "Edit With Form" above to add content 12TXAFloraAndFaunaConsiderations.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative In Texas, no person may capture, trap, take, or kill, or attempt to

164

GRR/Section 14-TX-a - Nonpoint Source Pollution | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 14-TX-a - Nonpoint Source Pollution GRR/Section 14-TX-a - Nonpoint Source Pollution < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-TX-a - Nonpoint Source Pollution 14TXANonpointSourcePollution.pdf Click to View Fullscreen Contact Agencies Texas Commission on Environmental Quality Regulations & Policies Clean Water Act CWA §319(b) Triggers None specified Click "Edit With Form" above to add content 14TXANonpointSourcePollution.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative The Texas Nonpoint Source Management Program (Management Program) is required under the Clean Water Act(CWA), specifically CWA §319(b). The

165

GRR/Section 6-TX-b - Construction Storm Water Permitting Process | Open  

Open Energy Info (EERE)

6-TX-b - Construction Storm Water Permitting Process 6-TX-b - Construction Storm Water Permitting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 6-TX-b - Construction Storm Water Permitting Process 06TXBConstructionStormWaterPermit.pdf Click to View Fullscreen Contact Agencies Texas Commission on Environmental Quality EPA Regulations & Policies TPDES Construction General Permit (TXR150000) 30 Texas Administrative Code 205 General Permits for Waste Discharges Texas Water Code 26.040 General Permits Clean Water Act Triggers None specified Click "Edit With Form" above to add content 06TXBConstructionStormWaterPermit.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range.

166

GRR/Section 4-TX-a - State Exploration Process | Open Energy Information  

Open Energy Info (EERE)

4-TX-a - State Exploration Process 4-TX-a - State Exploration Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 4-TX-a - State Exploration Process 04TXAStateExplorationProcess.pdf Click to View Fullscreen Contact Agencies Texas General Land Office Railroad Commission of Texas Texas Parks and Wildlife Department Regulations & Policies 16 TAC 3.5: Application to Drill, Deepen, Reenter, or Plug Back 16 TAC 3.7: Strata to Be Sealed Off 16 TAC 3.79: Definitions 16 TAC 3.100: Seismic Holes and Core Holes 31 TAC 10.2: Prospect Permits on State Lands 31 TAC 155.40: Definitions 31 TAC 155.42: Mining Leases on Properties Subject to Prospect 31 TAC 9.11: Geophysical and Geochemical Exploration Permits Triggers None specified

167

GRR/Section 14-TX-d - Section 401 Water Quality Certification | Open Energy  

Open Energy Info (EERE)

4-TX-d - Section 401 Water Quality Certification 4-TX-d - Section 401 Water Quality Certification < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-TX-d - Section 401 Water Quality Certification 14TXDSection401WaterQualityCertification (2).pdf Click to View Fullscreen Contact Agencies Railroad Commission of Texas Regulations & Policies 16 TAC 3.93 - RRC Water Quality Certification 16 TAC 3.30 - MOU between the RRC and the TCEQ Triggers None specified Click "Edit With Form" above to add content 14TXDSection401WaterQualityCertification (2).pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative Section 401 of the Clean Water Act (CWA) requires a Water Quality

168

GRR/Section 3-TX-b - Land Access | Open Energy Information  

Open Energy Info (EERE)

3-TX-b - Land Access 3-TX-b - Land Access < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-TX-b - Land Access 03TXBLandAccess.pdf Click to View Fullscreen Contact Agencies Texas General Land Office Railroad Commission of Texas Regulations & Policies Tex. Nat. Rec. Code Sec. 51.291(a) Tex. Nat. Rec. Code Sec. 33.111 Triggers None specified Click "Edit With Form" above to add content 03TXBLandAccess.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative This flowchart illustrates the process of gaining access to certain types of land in Texas apart from the geothermal resource lease process.

169

GRR/Section 14-TX-e - Ground Water Discharge Permit | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-TX-e - Ground Water Discharge Permit GRR/Section 14-TX-e - Ground Water Discharge Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-TX-e - Ground Water Discharge Permit 14TXEGroundWaterDischargePermit (1).pdf Click to View Fullscreen Contact Agencies Railroad Commission of Texas United States Environmental Protection Agency Regulations & Policies 16 TAC 3.8 (Rule 8) Triggers None specified Click "Edit With Form" above to add content 14TXEGroundWaterDischargePermit (1).pdf 14TXEGroundWaterDischargePermit (1).pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative Pits are used in drilling operations to contain drilling related fluids and

170

GRR/Section 7-TX-a - Energy Facility Registration | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 7-TX-a - Energy Facility Registration GRR/Section 7-TX-a - Energy Facility Registration < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 7-TX-a - Energy Facility Registration 07TXAEnergyFacilitySiting.pdf Click to View Fullscreen Contact Agencies Public Utility Commission of Texas Regulations & Policies PUC Substantive Rule 25.109: Registration of Power Generation Companies and Self-Generators Triggers None specified Click "Edit With Form" above to add content 07TXAEnergyFacilitySiting.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative This flowchart illustrates the necessary process for registering as an

171

GRR/Section 7-TX-c - Certificate of Convenience and Necessity | Open Energy  

Open Energy Info (EERE)

GRR/Section 7-TX-c - Certificate of Convenience and Necessity GRR/Section 7-TX-c - Certificate of Convenience and Necessity < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 7-TX-c - Certificate of Convenience and Necessity 07TXCCertificateOfConvenienceAndNecessity.pdf Click to View Fullscreen Contact Agencies Public Utility Commission of Texas Regulations & Policies PUCT Substantive Rule 22 PUCT Substantive Rule 25.5 PUCT Substantive Rule 25.83 PUCT Substantive Rule 25.101 Public Utility Regulatory Act Triggers None specified Click "Edit With Form" above to add content 07TXCCertificateOfConvenienceAndNecessity.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range.

172

U.S. Price of Liquefied Natural Gas Imports by Point of Entry  

Annual Energy Outlook 2012 (EIA)

TX 14.85 2013-2013 Sabine Pass, LA 2011-2012 From Oman -- -- -- -- -- -- 2001-2013 From Peru 2010-2011 Cameron, LA 2011-2011 Freeport, TX 2011-2011 From Qatar 3.57 -- -- -- -- --...

173

Texas AgriLife Research and Extension Center 17360 Coit Road, Dallas, TX 75252  

E-Print Network (OSTI)

Texas AgriLife Research and Extension Center 17360 Coit Road, Dallas, TX 75252 Fall Integrated Pest Management Seminar Melody Lee Texas Department of Agriculture -- Dallas Dr. Dotty Woodson Texas AgriLife Extension Service--Dallas Dr. Young-Ki Jo Texas AgriLife Extension Service -- College Station Dr. James Mc

Wilkins, Neal

174

U.S. Natural Gas Exports to Portugal  

Gasoline and Diesel Fuel Update (EIA)

Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port Nikiski, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA San Diego, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Freeport, TX Sabine Pass, LA LNG Exports from Cameron, LA LNG Exports from Kenai, AK LNG Exports from Freeport, TX LNG Exports from Nogales, AZ LNG Exports from Otay Mesa, CA LNG Exports from Sabine Pass, LA LNG Exports from Sweetgrass, MT Period: Monthly Annual

175

U.S. Liquefied Natural Gas Exports to Spain  

Gasoline and Diesel Fuel Update (EIA)

Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port Nikiski, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA San Diego, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Freeport, TX Sabine Pass, LA LNG Exports from Cameron, LA LNG Exports from Kenai, AK LNG Exports from Freeport, TX LNG Exports from Nogales, AZ LNG Exports from Otay Mesa, CA LNG Exports from Sabine Pass, LA LNG Exports from Sweetgrass, MT Period: Monthly Annual

176

U.S. Liquefied Natural Gas Exports to United Kingdom  

Gasoline and Diesel Fuel Update (EIA)

Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port Nikiski, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA San Diego, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Freeport, TX Sabine Pass, LA LNG Exports from Cameron, LA LNG Exports from Kenai, AK LNG Exports from Freeport, TX LNG Exports from Nogales, AZ LNG Exports from Otay Mesa, CA LNG Exports from Sabine Pass, LA LNG Exports from Sweetgrass, MT Period: Monthly Annual

177

U.S. Natural Gas Exports to Chile  

Gasoline and Diesel Fuel Update (EIA)

Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port Nikiski, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA San Diego, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Freeport, TX Sabine Pass, LA LNG Exports from Cameron, LA LNG Exports from Kenai, AK LNG Exports from Freeport, TX LNG Exports from Nogales, AZ LNG Exports from Otay Mesa, CA LNG Exports from Sabine Pass, LA LNG Exports from Sweetgrass, MT Period: Monthly Annual

178

U.S. Liquefied Natural Gas Exports To Brazil  

Gasoline and Diesel Fuel Update (EIA)

Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port Nikiski, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA San Diego, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Freeport, TX Sabine Pass, LA LNG Exports from Cameron, LA LNG Exports from Kenai, AK LNG Exports from Freeport, TX LNG Exports from Nogales, AZ LNG Exports from Otay Mesa, CA LNG Exports from Sabine Pass, LA LNG Exports from Sweetgrass, MT Period: Monthly Annual

179

U.S. LNG Imports from Canada  

Gasoline and Diesel Fuel Update (EIA)

Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port Nikiski, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA San Diego, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Freeport, TX Sabine Pass, LA LNG Exports from Cameron, LA LNG Exports from Kenai, AK LNG Exports from Freeport, TX LNG Exports from Nogales, AZ LNG Exports from Otay Mesa, CA LNG Exports from Sabine Pass, LA LNG Exports from Sweetgrass, MT Period: Monthly Annual

180

U.S. Liquefied Natural Gas Exports to India  

Gasoline and Diesel Fuel Update (EIA)

Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port Nikiski, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA San Diego, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Freeport, TX Sabine Pass, LA LNG Exports from Cameron, LA LNG Exports from Kenai, AK LNG Exports from Freeport, TX LNG Exports from Nogales, AZ LNG Exports from Otay Mesa, CA LNG Exports from Sabine Pass, LA LNG Exports from Sweetgrass, MT Period: Monthly Annual

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

U.S. Liquefied Natural Gas Exports to Japan  

Gasoline and Diesel Fuel Update (EIA)

Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port Nikiski, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA San Diego, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Freeport, TX Sabine Pass, LA LNG Exports from Cameron, LA LNG Exports from Kenai, AK LNG Exports from Freeport, TX LNG Exports from Nogales, AZ LNG Exports from Otay Mesa, CA LNG Exports from Sabine Pass, LA LNG Exports from Sweetgrass, MT Period: Monthly Annual

182

U.S. Natural Gas Exports to Mexico  

Gasoline and Diesel Fuel Update (EIA)

Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port Nikiski, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA San Diego, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Freeport, TX Sabine Pass, LA LNG Exports from Cameron, LA LNG Exports from Kenai, AK LNG Exports from Freeport, TX LNG Exports from Nogales, AZ LNG Exports from Otay Mesa, CA LNG Exports from Sabine Pass, LA LNG Exports from Sweetgrass, MT Period: Monthly Annual

183

U.S. Natural Gas Exports to Russia  

Gasoline and Diesel Fuel Update (EIA)

Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port Nikiski, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA San Diego, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Freeport, TX Sabine Pass, LA LNG Exports from Cameron, LA LNG Exports from Kenai, AK LNG Exports from Freeport, TX LNG Exports from Nogales, AZ LNG Exports from Otay Mesa, CA LNG Exports from Sabine Pass, LA LNG Exports from Sweetgrass, MT Period: Monthly Annual

184

China Ga Air Compressor, China Ga Air Compressor Products ...  

U.S. Energy Information Administration (EIA)

China Ga Air Compressor, China Ga Air Compressor Suppliers and Manufacturers Directory - Source a Large Selection of Ga Air Compressor Products at ...

185

File:15-TX-a- Fact Sheet - Tips for a Speedy Administrative Review.pdf |  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search File Edit History Facebook icon Twitter icon » File:15-TX-a- Fact Sheet - Tips for a Speedy Administrative Review.pdf Jump to: navigation, search File File history File usage Metadata File:15-TX-a- Fact Sheet - Tips for a Speedy Administrative Review.pdf Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(1,275 × 1,650 pixels, file size: 16 KB, MIME type: application/pdf) File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 14:17, 12 June 2013 Thumbnail for version as of 14:17, 12 June 2013 1,275 × 1,650 (16 KB) Apalazzo (Talk | contribs)

186

File:03-TX-e - Lease of Texas Parks & Wildlife Department Land (1).pdf |  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search File Edit History Facebook icon Twitter icon » File:03-TX-e - Lease of Texas Parks & Wildlife Department Land (1).pdf Jump to: navigation, search File File history File usage Metadata File:03-TX-e - Lease of Texas Parks & Wildlife Department Land (1).pdf Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(1,275 × 1,650 pixels, file size: 46 KB, MIME type: application/pdf) File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 12:50, 26 July 2013 Thumbnail for version as of 12:50, 26 July 2013 1,275 × 1,650 (46 KB) Apalazzo (Talk | contribs)

187

File:USDA-CE-Production-GIFmaps-TX.pdf | Open Energy Information  

Open Energy Info (EERE)

TX.pdf TX.pdf Jump to: navigation, search File File history File usage Texas Ethanol Plant Locations Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 442 KB, MIME type: application/pdf) Description Texas Ethanol Plant Locations Sources United States Department of Agriculture Related Technologies Biomass, Biofuels, Ethanol Creation Date 2010-01-19 Extent State Countries United States UN Region Northern America States Texas External links http://www.nass.usda.gov/Charts_and_Maps/Ethanol_Plants/ File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 16:21, 27 December 2010 Thumbnail for version as of 16:21, 27 December 2010 1,650 × 1,275 (442 KB) MapBot (Talk | contribs) Automated bot upload

188

GRR/Section 15-TX-a - Air Permit - Permit to Construct | Open Energy  

Open Energy Info (EERE)

GRR/Section 15-TX-a - Air Permit - Permit to Construct GRR/Section 15-TX-a - Air Permit - Permit to Construct < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 15-TX-a - Air Permit - Permit to Construct 15TXAAirPermitPermitToConstruct (1).pdf Click to View Fullscreen Contact Agencies Texas Commission on Environmental Quality Regulations & Policies Title 30 of the Texas Administrative Code 30 TAC 116.114 30 TAC 39.418 30 TAC 39.604 30 TAC 39.605 30 TAC 39.409 30 TAC 116.136 30 TAC 55.254 30 TAC 116.136 30 TAC 116.137 Triggers None specified Click "Edit With Form" above to add content 15TXAAirPermitPermitToConstruct (1).pdf 15TXAAirPermitPermitToConstruct (1).pdf 15TXAAirPermitPermitToConstruct (1).pdf Error creating thumbnail: Page number not in range.

189

File:03-TX-g - Lease of Relinquishment Act Lands.pdf | Open Energy  

Open Energy Info (EERE)

-TX-g - Lease of Relinquishment Act Lands.pdf -TX-g - Lease of Relinquishment Act Lands.pdf Jump to: navigation, search File File history File usage Metadata File:03-TX-g - Lease of Relinquishment Act Lands.pdf Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Go to page 1 2 Go! next page → next page → Full resolution ‎(1,275 × 1,650 pixels, file size: 82 KB, MIME type: application/pdf, 2 pages) File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 11:49, 29 July 2013 Thumbnail for version as of 11:49, 29 July 2013 1,275 × 1,650, 2 pages (82 KB) Apalazzo (Talk | contribs) 14:43, 26 July 2013 Thumbnail for version as of 14:43, 26 July 2013 1,275 × 1,650, 2 pages (82 KB) Apalazzo (Talk | contribs)

190

Albany, OR * Fairbanks, AK * Morgantown, WV * Pittsburgh, PA * Sugar Land, TX  

NLE Websites -- All DOE Office Websites (Extended Search)

Rick Dunst Rick Dunst Project Manager National Energy Technology Laboratory 626 Cochrans Mill Road P.O. Box 10940 MS 922-273C Pittsburgh, PA 15236-0940 412-386-6694 richard.dunst@netl.doe.gov Felicia Manciu Principal Investigator University of Texas at El Paso 500 West University Avenue El Paso, TX 79968-8900 915-747-5715 fsmanciu@utep.edu PROJECT DURATION Start Date 01/15/2009 End Date 12/15/2013 COST Total Project Value $249,546 DOE/Non-DOE Share $249,546 / $0

191

U.S. Liquefied Natural Gas Exports to Japan  

Gasoline and Diesel Fuel Update (EIA)

Babb, MT Havre, MT Port of Morgan, MT Pittsburg, NH Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Sabine Pass, LA Period: Monthly Annual

192

U.S. Natural Gas Exports to Russia  

Gasoline and Diesel Fuel Update (EIA)

Babb, MT Havre, MT Port of Morgan, MT Pittsburg, NH Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Sabine Pass, LA Period: Monthly Annual

193

U.S. Total Exports  

Gasoline and Diesel Fuel Update (EIA)

Babb, MT Havre, MT Port of Morgan, MT Pittsburg, NH Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Sabine Pass, LA Period: Monthly Annual

194

U.S. Liquefied Natural Gas Exports to United Kingdom  

Gasoline and Diesel Fuel Update (EIA)

Babb, MT Havre, MT Port of Morgan, MT Pittsburg, NH Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Sabine Pass, LA Period: Monthly Annual

195

U.S. Natural Gas Exports to China  

Gasoline and Diesel Fuel Update (EIA)

Babb, MT Havre, MT Port of Morgan, MT Pittsburg, NH Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Sabine Pass, LA Period: Monthly Annual

196

U.S. Liquefied Natural Gas Exports to India  

Gasoline and Diesel Fuel Update (EIA)

Babb, MT Havre, MT Port of Morgan, MT Pittsburg, NH Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Sabine Pass, LA Period: Monthly Annual

197

U.S. Natural Gas Exports to Russia  

Gasoline and Diesel Fuel Update (EIA)

Babb, MT Havre, MT Port of Morgan, MT Pittsburg, NH Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Sabine Pass, LA Period: Monthly Annual

198

U.S. Natural Gas Exports to Portugal  

Gasoline and Diesel Fuel Update (EIA)

Babb, MT Havre, MT Port of Morgan, MT Pittsburg, NH Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Sabine Pass, LA Period: Monthly Annual

199

U.S. Natural Gas Exports to Mexico  

Gasoline and Diesel Fuel Update (EIA)

Babb, MT Havre, MT Port of Morgan, MT Pittsburg, NH Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA Total to Mexico Douglas, AZ Nogales, AZ Calexico, CA Ogilby Mesa, CA Otay Mesa, CA Alamo, TX Clint, TX Del Rio, TX Eagle Pass, TX El Paso, TX Hidalgo, TX McAllen, TX Penitas, TX Rio Bravo, TX Roma, TX Total to Portugal Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total to Spain Cameron, LA Sabine Pass, LA Total to United Kingdom Sabine Pass, LA Period: Monthly Annual

200

Tank 241-TX-118, core 236 analytical results for the final report  

SciTech Connect

This document is the analytical laboratory report for tank 241-TX-118 push mode core segments collected between April 1, 1998 and April 13, 1998. The segments were subsampled and analyzed in accordance with the Tank 241-TX-118 Push Mode Core sampling and Analysis Plan (TSAP) (Benar, 1997), the Safety Screening Data Quality Objective (DQO) (Dukelow, et al., 1995), the Data Quality Objective to Support Resolution of the Organic Complexant Safety Issue (Organic DQO) (Turner, et al, 1995) and the Historical Model Evaluation Data Requirements (Historical DQO) (Sipson, et al., 1995). The analytical results are included in the data summary table (Table 1). None of the samples submitted for Differential Scanning Calorimetry (DSC) and Total Organic Carbon (TOC) exceeded notification limits as stated in the TSAP (Benar, 1997). One sample exceeded the Total Alpha Activity (AT) analysis notification limit of 38.4{micro}Ci/g (based on a bulk density of 1.6), core 236 segment 1 lower half solids (S98T001524). Appropriate notifications were made. Plutonium 239/240 analysis was requested as a secondary analysis. The statistical results of the 95% confidence interval on the mean calculations are provided by the Tank Waste Remediation Systems Technical Basis Group in accordance with the Memorandum of Understanding (Schreiber, 1997) and are not considered in this report.

ESCH, R.A.

1998-11-19T23:59:59.000Z

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

File:03-TX-f - Lease of Land Trade Lands.pdf | Open Energy Information  

Open Energy Info (EERE)

f - Lease of Land Trade Lands.pdf f - Lease of Land Trade Lands.pdf Jump to: navigation, search File File history File usage Metadata File:03-TX-f - Lease of Land Trade Lands.pdf Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(1,275 × 1,650 pixels, file size: 42 KB, MIME type: application/pdf) File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 13:54, 26 July 2013 Thumbnail for version as of 13:54, 26 July 2013 1,275 × 1,650 (42 KB) Apalazzo (Talk | contribs) You cannot overwrite this file. Edit this file using an external application (See the setup instructions for more information) File usage The following page links to this file: GRR/Section 3-TX-f - Lease of Land Trade Lands

202

Freeport, Maine: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

570242°, -70.1031057° 570242°, -70.1031057° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.8570242,"lon":-70.1031057,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

203

Chattanooga Eagle Ford Western Gulf TX-LA-MS Salt Basin Uinta Basin  

U.S. Energy Information Administration (EIA) Indexed Site

Western Western Gulf TX-LA-MS Salt Basin Uinta Basin Devonian (Ohio) Marcellus Utica Bakken*** Avalon- Bone Spring San Joaquin Basin Monterey Santa Maria, Ventura, Los Angeles Basins Monterey- Temblor Pearsall Tuscaloosa Big Horn Basin Denver Basin Powder River Basin Park Basin Niobrara* Mowry Niobrara* Heath** Manning Canyon Appalachian Basin Antrim Barnett Bend New Albany Woodford Barnett- Woodford Lewis Hilliard- Baxter- Mancos Excello- Mulky Fayetteville Floyd- Neal Gammon Cody Haynesville- Bossier Hermosa Mancos Pierre Conasauga Michigan Basin Ft. Worth Basin Palo Duro Basin Permian Basin Illinois Basin Anadarko Basin Greater Green River Basin Cherokee Platform San Juan Basin Williston Basin Black Warrior Basin A r d m o r e B a s i n Paradox Basin Raton Basin Montana Thrust Belt Marfa Basin Valley & Ridge Province Arkoma Basin Forest

204

RCRA Assessment Plan for Single-Shell Tank Waste Management Area TX-TY at the Hanford Site  

SciTech Connect

A groundwater quality assessment plan was prepared to investigate the rate and extent of aquifer contamination beneath Waste Management Area TX-TY on the Hanford Site in Washington State. This plan is an update of a draft plan issued in February 1999, which guided work performed in fiscal year 2000.

Hodges, Floyd N.; Chou, Charissa J.

2001-02-23T23:59:59.000Z

205

Ba-Ga (Barium - Gallium)  

Science Conference Proceedings (OSTI)

Ba-Ga crystallographic data...Ba-Ga crystallographic data Phase Composition, wt% Ga Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 10 Ga 4.8 cF 176 Fd m Ba 8 Ga 7 30.8 cP 60 P 2 1 3 BaGa 2 50.4 hP 3 P 6/ mmm BaGa 4 67 tI 10 I 4/ mmm (Ga) 100 hP 2 P 6 3 / mmc...

206

Application of CC at a Corporate Headquarters Facility in Dallas, TX  

E-Print Network (OSTI)

A corporate headquarters complex located in Dallas, TX consists of four buildings served by a central utility plant. The Continuous Commissioning (CC) process was applied to one building with approximately 688,000 square feet of primarily of data floor space. This building was identified as a candidate for the CC process because it consumed 58% of the 132 million kWh of electricity used by the complex in 2010 and had recently received several HVAC upgrades. CC is an ongoing process for existing buildings and central plant facilities to resolve operating problems, improve comfort, optimize energy use, and identify retrofits based on current building usage rather than original design intent [1]. The data floor optimization process consisted of three components: traditional commissioning activities, CC measure implementation, and low cost retrofits. Various M&V strategies were also utilized to quantify the resulting energy savings in a building whose energy use is dominated by data equipment load. Using six months of pre- and post- implementation HVAC equipment electrical service meter trend data, a savings of 948,700 kWh was achieved. When these savings are extrapolated to twelve months, this project is expected to reduce the 2010 HVAC electricity usage by 25% ($133,000). Once the central plant savings are included, the overall savings of this project is approximately $146,000/year.

Meline, K.; Kimla, J.

2011-01-01T23:59:59.000Z

207

Lessons Learned from Continuous Commissioning of the Robert E. Johnson State Office Building, Austin, TX  

E-Print Network (OSTI)

The Robert E. Johnson State Office building is a 5-story, 303,389 square foot office building built in 2000 located in downtown Austin, TX. The original building design included a number of energy conservation measures that were incorporated into the final construction. During the investigation of the building, four energy conservation measures were identified, three of which deal with conventional HVAC systems. The fourth is related to the currently unutilized daylighting system which was one of the energy conservation measures of the original building design. Utilizing this system would lead to approximately 18.5% annual lighting energy savings or 5.6% annual whole building energy savings based on a DOE-2 simulation analysis. Three main lessons were learned from the experience with the Robert E. Johnson building: The traditional design-construction-operation team must include the energy conservation analysis team The entire building process should be reorganized to assure that complete information is provided and passed on from the energy conservation analysis team High performance buildings should be continuously monitored and analyzed

Bynum, J.; Claridge, D. E.

2008-09-22T23:59:59.000Z

208

File:03-TX-d - Lease of Public School Fund Land (1).pdf | Open Energy  

Open Energy Info (EERE)

Land (1).pdf Land (1).pdf Jump to: navigation, search File File history File usage Metadata File:03-TX-d - Lease of Public School Fund Land (1).pdf Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(1,275 × 1,650 pixels, file size: 41 KB, MIME type: application/pdf) File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 11:26, 29 July 2013 Thumbnail for version as of 11:26, 29 July 2013 1,275 × 1,650 (41 KB) Apalazzo (Talk | contribs) 13:47, 26 July 2013 Thumbnail for version as of 13:47, 26 July 2013 1,275 × 1,650 (41 KB) Apalazzo (Talk | contribs) You cannot overwrite this file. Edit this file using an external application (See the setup instructions for more information)

209

TxDOT Goes Beyond Compliance by Purchasing 100% AFVs. EPAct Fleet Information and Regulations, State& Alternative Fuel Provider Program Success Story  

DOE Green Energy (OSTI)

Fact sheet features the challenges the Texas Department of Transportation (TxDOT) faced and overcame in complying to a Texas legislation that calls for the acquisition of only alternative fuel vehicles.

Not Available

2002-01-01T23:59:59.000Z

210

CALDERN, HCTOR. Narratives of Greater Mxico: Essays on Chicano Literary History, Genre, and Borders. Austin, TX: U of Texas P, 2004. 284 pp.  

E-Print Network (OSTI)

Borders. Austin, TX: U of Texas P, 2004. 284 pp. "There areEl New Paso and Ro Grande, Texas; Mxico; San Francisco andthe and cultural migrant Texas-Mexican farmworker community

Prez, Marisol

2005-01-01T23:59:59.000Z

211

To be presented at the 2007 ASHRAE Winter Meeting, January 27-31, 2007, Dallas, TX. Measured energy performance a US-China demonstration  

E-Print Network (OSTI)

LBNL-60978 To be presented at the 2007 ASHRAE Winter Meeting, January 27-31, 2007, Dallas, TX efficient than ASHRAE 90.1- 1999. The utility data from the first year's operation match well the analysis

212

U.S. Price of Liquefied Natural Gas Imports by Point of Entry  

Annual Energy Outlook 2012 (EIA)

2.84 2007-2012 From Oman -- -- -- -- -- -- 1997-2012 Lake Charles, LA 1999-2006 From Peru -- -- -- 6.99 7.46 2007-2011 Cameron, LA -- -- -- -- 7.58 2007-2011 Freeport, TX -- --...

213

U.S. LNG Imports from United Arab Emirates  

Annual Energy Outlook 2012 (EIA)

Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba...

214

Workbook Contents  

U.S. Energy Information Administration (EIA) Indexed Site

U.S. Natural Gas Exports to Russia (MMcf)","Liquefied U.S. Natural Gas Exports to South Korea (MMcf)","Freeport, TX Liquefied Natural Gas Exports to South Korea (Million Cubic...

215

U.S. Natural Gas Exports to China  

Gasoline and Diesel Fuel Update (EIA)

NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan...

216

U.S. Total Exports  

Annual Energy Outlook 2012 (EIA)

NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan...

217

U.S. Natural Gas Exports to Chile  

Annual Energy Outlook 2012 (EIA)

NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan...

218

U.S. Liquefied Natural Gas Exports to Spain  

Annual Energy Outlook 2012 (EIA)

NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan...

219

Ga-Zr (Gallium - Zirconium)  

Science Conference Proceedings (OSTI)

Ga-Zr crystallographic data...Ga 5 Zr 3 44.0 oC 32 Cmcm Ga 3 Zr 2 47 oF 40 Fdd 2 βGaZr 56.7 ? ? αGaZr 56.7 tI 16 I 4 1 / amd Ga 4 Zr 5 62.1 hP 18 P 6 3 / mcm Ga 2 Zr 3 66 tP 10 P 4/ mbm Ga 3 Zr 5 68.6 hP 16 P 6 3 / mcm GaZr 2 72.4 tI 12 I 4/ mcm (βZr) ~94 to 100 cI 2 Im m (αZr) 99.4 to 100 hP 2 P 6 3 / mmc...

220

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
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221

U.S. Liquefied Natural Gas Imports by Point of Entry  

U.S. Energy Information Administration (EIA) Indexed Site

5,171 5,626 8,046 8,111 8,809 16,950 1997-2013 5,171 5,626 8,046 8,111 8,809 16,950 1997-2013 From Canada 0 0 0 88 139 139 2013-2013 Highgate Springs, VT 88 139 139 2013-2013 From Algeria 0 0 0 0 0 0 1973-2013 From Australia 0 0 0 0 0 0 1973-2013 From Brunei 0 0 0 0 0 0 2001-2013 From Egypt 0 0 0 0 0 0 2005-2013 Cameron, LA 2011-2011 Elba Island, GA 2011-2012 Freeport, TX 2011-2011 Gulf LNG, MS 2011-2011 From Equatorial Guinea 0 0 0 0 0 0 2007-2013 From Indonesia 0 0 0 0 0 0 1997-2013 From Malaysia 0 0 0 0 0 0 1999-2013 From Nigeria 0 0 0 0 0 2,590 1997-2013 Cove Point, MD 2,590 2011-2013 From Norway 0 0 0 0 2,709 2,918 2007-2013 Cove Point, MD 2011-2011 Freeport, TX 2,709 2,918 2013-2013 Sabine Pass, LA 2011-2012 From Oman 0 0 0 0 0 0 2000-2013 From Peru

222

Polarization-engineered GaN/InGaN/GaN tunnel diodes  

E-Print Network (OSTI)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

2010-08-24T23:59:59.000Z

223

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

224

Optimal Deployment Plan of Emission Reduction Technologies for TxDOT's Construction Equipment  

E-Print Network (OSTI)

The purpose of this study was to develop and test an optimization model that will provide a deployment plan of emission reduction technologies to reduce emissions from non-road equipment. The focus of the study was on the counties of Texas that have nonattainment (NA) and near-nonattainment (NNA) status. The objective of this research was to develop methodologies that will help to deploy emission reduction technologies for non-road equipment of TxDOT to reduce emissions in a cost effective and optimal manner. Three technologies were considered for deployment in this research, (1) hydrogen enrichment (HE), (2) selective catalytic reduction (SCR) and (3) fuel additive (FA). Combinations of technologies were also considered in the study, i.e. HE with FA, and SCR with FA. Two approaches were investigated in this research. The first approach was "Method 1" in which all the technologies, i.e. FA, HE and SCR were deployed in the NA counties at the first stage. In the second stage the same technologies were deployed in the NNA counties with the remaining budget, if any. The second approach was called "Method 2" in which all the technologies, i.e. FA, HE and SCR were deployed in the NA counties along with deploying only FA in the NNA counties at the first stage. Then with the remaining budget, SCR and HE were deployed in the NNA counties in the second stage. In each of these methods, 2 options were considered, i.e. maximizing NOx reduction with and without fuel economy consideration in the objective function. Thus, the four options investigated each having different mixes of emission reduction technologies include Case 1A: Method 1 with fuel economy consideration; Case 1B: Method 1 without fuel economy consideration; Case 2A: Method 2 with fuel economy consideration; and Case 2B: Method 2 without fuel economy consideration and were programmed with Visual C++ and ILOG CPLEX. These four options were tested for budget amounts ranging from $500 to $1,183,000 and the results obtained show that for a given budget one option representing a mix of technologies often performed better than others. This is conceivable because for a given budget the optimization model selects an affordable option considering the cost of technologies involved while at the same time maximum emission reduction, with and without fuel economy consideration, is achieved. Thus the alternative options described in this study will assist the decision makers to decide about the deployment preference of technologies. For a given budget, the decision maker can obtain the results for total NOx reduction, combined diesel economy and total combined benefit using the four models mentioned above. Based on their requirements and priorities, they can select the desired model and subsequently obtain the required deployment plan for deploying the emission reduction technologies in the NA and NNA counties.

Bari, Muhammad Ehsanul

2009-08-01T23:59:59.000Z

225

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

226

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

227

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name GA-SNC Solar Place Nevada Sector Solar Product Nevada-based PV project developer and joint venture of GA-Solar North America and...

228

2004 Initial Assessments for the T and TX TY Tank Farm Field Investigation Report (FIR): Numerical Simulations  

SciTech Connect

In support of CH2M HILL Hanford Group, Inc.s (CHG) preparation of a Field Investigative Report (FIR) for the Hanford Site Single-Shell Tank Waste Management Area (WMA) T and TX-TY, a suite of numerical simulations of flow and solute transport was executed using the STOMP code to predict the performance of surface barriers for reducing long-term risks from potential groundwater contamination at the T and TX-TY WMA. The scope and parametric data for these simulations were defined by a modeling data package provided by CHG. This report documents the simulation involving 2-D cross sections through the T Tank and the TX-TY Tank Farm. Eight cases were carried out for the cross sections to simulate the effects of interim barrier, water line leak, inventory distribution, and surface recharge on water flow and the transport of long-lived radionuclides (i.e., technecium-99 and uranium) and chemicals (i.e., nitrate and chromium For simulations with barriers, it is assumed that an interim barrier is in place by the year 2010. It was also assumed that, for all simulations, as part of tank farm closure, a closure barrier was in place by the year 2040. The modeling considers the estimated inventories of contaminants within the vadose zone and calculates the associated risk. It assumes that no tanks will leak in the future. Initial conditions for contaminant concentration are provided as part of inventory estimates for uranium, technetium-99, nitrate, and chromium. For moisture flow modeling, Neumann boundary conditions are prescribed at the surface with the flux equal to the recharge rate estimate. For transport modeling, a zero flux boundary is prescribed at the surface for uranium, technetium-99, nitrate, and chromium. The western and eastern boundaries are assigned no-flux boundaries for both flow and transport. The water table boundary is prescribed by water table elevations and the unconfined aquifer hydraulic gradient. No-flux boundaries are used for the lower boundary. Numerical results were obtained for compliance at the WMA boundary, 200 Areas boundary, exclusion boundary beyond the 200 Areas, and the Columbia River (DOE-RL 2000). Streamtube/analytical models were used to route computed contaminant concentrations at the water table to the downstream compliance points. When the interim barrier was applied at 2010, the soil was desaturated gradually. The difference in saturation of the soil with and without the interim barrier was the largest at 2040, the time the closure barrier was applied. After this, the difference in saturation in the two cases became smaller with time. Generally, the solutes broke though faster if there was a water line leak. A relative small five-day leak (Case 4) had little effect on the peak concentration, while a large 20-yr leak (Case 3) increased the peak concentration significantly and reduced the solute travel in the vadose zone. The distribution of the inventory, either uniform or nonuniform, has little effect on peak arrival time; the peak concentrations of the conservative solutes varied by -6.9 to 0.2% for the T tank farm and by 11 to 49.4% for the TX tank farm. The reduction of the meteoric recharge before the barrier was applied led to less soil saturation, as expected, and thus longer solute travel time in the vadose zone and smaller peak fence line concentration. The effect on soil saturation lasted for about another 50 years after the barrier was applied at 2050. However, the reduced recharge rate affected the breakthough curve till the end of the simulation. The fence line concentrations at the year 3000 were always higher for cases with reduced natural recharge than for those of the base case, which indicates that the fundamental impact of the reduced natural recharge is a smoothing of the breakthrough concentrations at the compliance points.

Zhang, Z. F.; Freedman, Vicky L.; Waichler, Scott R.

2004-09-24T23:59:59.000Z

229

U.S. Liquefied Natural Gas Imports by Point of Entry  

Gasoline and Diesel Fuel Update (EIA)

TX 2,709 2013-2013 Sabine Pass, LA 2011-2012 From Oman 0 0 0 0 0 0 2000-2013 From Peru 2010-2011 Cameron, LA 2011-2011 Freeport, TX 2011-2011 From Qatar 3,663 0 0 0 0 0...

230

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures  

Science Conference Proceedings (OSTI)

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.

Abramkin, D. S.; Putyato, M. A.; Budennyy, S. A.; Gutakovskii, A. K.; Semyagin, B. R.; Preobrazhenskii, V. V.; Shamirzaev, T. S. [A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Pr. Lavrentyeva 13, 630090 Novosibirsk (Russian Federation); Kolomys, O. F.; Strelchuk, V. V. [V. E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, Pr. Nauki 41, 03028 Kiev (Ukraine)

2012-10-15T23:59:59.000Z

231

General Atomics (GA) Fusion News: A New Spin on Understanding...  

NLE Websites -- All DOE Office Websites (Extended Search)

General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New...

232

Rodefeld Landfill Ga Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

Rodefeld Landfill Ga Biomass Facility Jump to: navigation, search Name Rodefeld Landfill Ga Biomass Facility Facility Rodefeld Landfill Ga Sector Biomass Facility Type Landfill Gas...

233

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

234

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

235

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures  

Science Conference Proceedings (OSTI)

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Fan Dongsheng; Yu Shuiqing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Zeng Zhaoquan; Hu Xian; Dorogan, Vitaliy G.; Li Chen; Benamara, Mourad; Hawkridge, Michael E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Johnson, Shane R. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Wang, Zhiming M. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2012-10-29T23:59:59.000Z

236

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

DOE Green Energy (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

237

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells  

E-Print Network (OSTI)

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells I. Friel, C online 20 June 2005 An ultraviolet electroabsorption modulator based on AlGaN/GaN quantum wells is demonstrated. Enhanced excitonic absorption in the quantum wells at around 3.48 eV was achieved using

Moustakas, Theodore

238

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

239

Village of Freeport, New York (Utility Company) | Open Energy...  

Open Energy Info (EERE)

Utility Rate Schedules Grid-background.png Large Commercial Commercial Residential Non Heating Residential Residential Space Heating Residential Residential Space and Water...

240

Freeport, MA Liquefied Natural Gas Exports to South Korea (Dollars...  

Annual Energy Outlook 2012 (EIA)

Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- 6.30 2010's 8.09 10.89...

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

242

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures  

Science Conference Proceedings (OSTI)

Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-12-24T23:59:59.000Z

243

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents (OSTI)

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

244

~tx410.ptx  

U.S. Energy Information Administration (EIA) Indexed Site

THURSDAY, APRIL 2, 2009 The meeting convened at 9:00 a.m. in Room 8E-089 of the James Forrestal Building, 1000 Independence Avenue, SW, Washington, D.C., Ed Blair, Chair, presiding. COMMITTEE MEMBERS PRESENT: EDWARD BLAIR, Chair STEVE BROWN MICHAEL COHEN BARBARA FORSYTH WALTER HILL VINCENT IANNACCHIONE NANCY KIRKENDALL EDWARD KOKKELENBERG ISRAEL MELENDEZ MICHAEL TOMAN JOHN WEYANT (202) 234-4433 Neal R. Gross & Co., Inc. Page 2 EIA STAFF PRESENT: STEPHANIE BROWN, Designated Federal Official, Director, Statistics and Methods Group (SMG) JAMES BERRY CAROL JOYCE BLUMBERG TINA BOWERS JAKE BOURNAZIAN, SMG EUGENE BURNS MICHAEL COLE, Office of Integrated Analysis and Forecasting (OIAF) JOHN CONTI BRENDA COX, SRA RAMESH DANDEKAR, SMG

245

~tx421.ptx  

U.S. Energy Information Administration (EIA) Indexed Site

FRIDAY APRIL 3, 2009 The meeting convened at 9:00 a.m. in Room 8E-089 of the James Forrestal Building, 1000 Independence Avenue, S.W., Washington, D.C., Edward Blair, Chair, presiding. COMMITTEE MEMBERS PRESENT: EDWARD BLAIR, Chair STEVE BROWN BARBARA FORSYTH WALTER HILL VINCENT IANNACCHIONE NANCY KIRKENDALL EDWARD KOKKELENBERG ISRAEL MELENDEZ MICHAEL TOMAN JOHN WEYANT (202) 234-4433 Neal R. Gross & Co., Inc. Page 2 EIA STAFF PRESENT: STEPHANIE BROWN, Designated Federal Official, Director, Statistics and Methods Group (SMG) JAMES BERRY CAROL JOYCE BLUMBERG TINA BOWERS JAKE BOURNAZIAN, SMG EUGENE BURNS MICHAEL COLE, Office of Integrated Analysis and Forecasting (OIAF) JOHN CONTI BRENDA COX, SRA RAMESH DANDEKAR, SMG JOHN PAUL DELEY, OIT

246

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

247

Alkali/TX sub 2 catalysts for CO/H sub 2 conversion to C sub 1 -C sub 4 alcohols  

DOE Green Energy (OSTI)

The objective of this research is to investigate and develop novel catalysts for the conversion of coal-derived synthesis gas into C{sub 1}--C{sub 4} alcohols by a highly selective process. Therefore, the variations of catalyst activity and selectivity for the synthesis of alcohols from H{sub 2}/CO {le}1 synthesis gas for a series of A/TX{sub 2} compounds, where A is a surface alkali dopant, T is a transition metal, and X is a S, Se, or Te, will be determined. The alkali component A, which is essential for C-O and C-C bond forming reactions leading to alcohols, will be highly dispersed on the TX{sub 2} surfaces by using chemical vapor deposition (CVD) and chemical complexation/anchoring (CCA) methods. Catalysts that have been prepared during this quarter include RuS{sub 2}, NbS{sub 2}, K/MoS{sub 2}, and K/Crown either/MoS{sub 2}. Catalysts tested include KOH/MoS{sub 2} and K/Crown ether/MoS{sub 2}. 9 refs., 10 figs., 2 tabs.

Klier, K.; Herman, R.G.; Brimer, A.; Richards, M.; Kieke, M.; Bastian, R.D.

1990-09-01T23:59:59.000Z

248

Characterization of Vadose Zone Sediments Below the TX Tank Farm: Boreholes C3830, C3831, C3832 and RCRA Borehole 299-W10-27  

Science Conference Proceedings (OSTI)

This report was revised in September 2008 to remove acid-extractable sodium data from Tables 4.8, 4.28,4.43, and 4.59. The sodium data was removed due to potential contamination introduced during the acid extraction process. The rest of the text remains unchanged from the original report issued in April 2004. The overall goal of the Tank Farm Vadose Zone Project, led by CH2M HILL Hanford Group, Inc., is to define risks from past and future single-shell tank farm activities at Hanford. To meet this goal, CH2M HILL Hanford Group, Inc. tasked scientists from Pacific Northwest National Laboratory to perform detailed analyses on vadose zone sediments from within Waste Management Area (WMA) T-TX-TY. This report is the first of two reports written to present the results of these analyses. Specifically, this report contains all the geologic, geochemical, and selected physical characterization data collected on vadose zone sediment recovered from boreholes C3830, C3831, and C3832 in the TX Tank Farm, and from borehole 299-W-10-27 installed northeast of the TY Tank Farm.

Serne, R. Jeffrey; Bjornstad, Bruce N.; Horton, Duane G.; Lanigan, David C.; Lindenmeier, Clark W.; Lindberg, Michael J.; Clayton, Ray E.; Legore, Virginia L.; Orr, Robert D.; Kutnyakov, Igor V.; Baum, Steven R.; Geiszler, Keith N.; Valenta, Michelle M.; Vickerman, Tanya S.

2008-09-11T23:59:59.000Z

249

passivation of InGaN/GaN nanopillar light emitting diodes.  

E-Print Network (OSTI)

??Recently, InGaN/GaN based blue light emitting diodes (LEDs) have become widely available commercially, but their efficiency is reduced due to the quantum confined Stark effect (more)

Choi, Won

2013-01-01T23:59:59.000Z

250

Detailed Analysis of Temperature Characteristics of InGaP/InGaAs ...  

Science Conference Proceedings (OSTI)

The current-voltage (I-V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. The structures of ...

251

AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy  

SciTech Connect

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

C.A. Wang; C.J. Vineis; D.R. Calawa

2002-02-13T23:59:59.000Z

252

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw compressors, 30-90 kW / 40-125 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

253

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors ...  

U.S. Energy Information Administration (EIA)

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors, 11-30 kW / 15-40 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

254

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw compressors, 90-160 kW / 125-200 hp.,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading ...

255

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells  

E-Print Network (OSTI)

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells Shunfeng Li Cubic InGaN/GaN multi-quantum-wells MQWs with high structural and optical quality are achieved by utilizing freestanding 3C-SiC 001 substrates and optimizing InGaN quantum well growth. Superlattice peaks up

As, Donat Josef

256

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT  

Science Conference Proceedings (OSTI)

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology, Palur Hills (India)

2011-05-15T23:59:59.000Z

257

Quantized states in homogenous polarized GaInN GaN quantum wells  

E-Print Network (OSTI)

Quantized states in homogenous polarized GaInN GaN quantum wells C. Wetzel1, S. Kamiyama1, H. Amano wells is calculated in a single particle model. The act- ing electric eld in the wells and the band gap-dimensional well layers our approach is based on induction from results obtained at the binary GaN barri- ers

Wetzel, Christian M.

258

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS  

E-Print Network (OSTI)

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS C. Wetzel, T. Takeuchi, H. Amano, and IInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across

Wetzel, Christian M.

259

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells  

E-Print Network (OSTI)

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells Marcus Eickhoff* and Dieter Suter, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding.60.-k; 78.55.Cr; 78.67.De Keywords: ODNMR; Pulsed excitation; Quantum well; GaAs 1. Introduction Nuclear

Suter, Dieter

260

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network (OSTI)

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Recanati, Catherine

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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261

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
262

TMS P&GA Wired to Washington  

Science Conference Proceedings (OSTI)

P & GA COMMITTEE HOME ... the connection between MSE and such key U.S. initiatives as national security, energy independence, and economic growth.

263

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

264

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

DOE Green Energy (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

265

Price of Elba Island, GA Liquefied Natural Gas Total Imports...  

Annual Energy Outlook 2012 (EIA)

Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet)...

266

Characterization of Vadose Zone Sediments Below the TX Tank Farm: Probe Holes C3830, C3831, C3832 and 299-W10-27  

Science Conference Proceedings (OSTI)

Pacific Northwest National Laboratory performed detailed analyses on vadose zone sediments from within Waste Management Area T-TX-TY. This report contains all the geologic, geochemical, and selected physical characterization data collected on vadose zone sediment recovered from three probe holes (C3830, C3831, and C3832) in the TX Tank Farm, and from borehole 299-W-10-27. Sediments from borehole 299-W-10-27 are considered to be uncontaminated sediments that can be compared with contaminated sediments. This report also presents our interpretation of the sediment lithologies, the vertical extent of contamination, the migration potential of the contaminants, and the likely source of the contamination in the vadose zone and groundwater below the TX Tank Farm. Sediment from the probe holes was analyzed for: moisture, radionuclide and carbon contents;, one-to-one water extracts (soil pH, electrical conductivity, cation, trace metal, and anion data), and 8 M nitric acid extracts. Overall, our analyses showed that common ion exchange is a key mechanism that influences the distribution of contaminants within that portion of the vadose zone affected by tank liquor. We did not observe significant indications of caustic alteration of the sediment mineralogy or porosity, or significant zones of slightly elevated pH values in the probe holes. The sediments do show that sodium-, nitrate-, and sulfate-dominated fluids are present. The fluids are more dilute than tank fluids observed below tanks at the SX and BX Tank Farms. Three primary stratigraphic units were encountered in each probe hole: (1) backfill material, (2) the Hanford formation, and (3) the Cold Creek unit. Each of the probe holes contain thin fine-grained layers in the Hanford H2 stratigraphic unit that may impact the flow of leaked fluids and effect irregular and horizontal flow. The probe holes could not penetrate below the enriched calcium carbonate strata of the Cold Creek lower subunit; therefore, we did not identify the maximum vertical penetration of the tank related plumes. However, the more elevated portions of the electrical conductivity (EC) profile at probe hole C3830 currently resides at the bottom of a fine-grained thin lens in the Hanford H2 unit at 87 ft bgs. At C3831, we lack good sample coverage to ascertain whether the salt plume has significantly descended into the Cold Creek Unit. There is strong indication at probe hole C3832 that the saline plume has descended into the Cold Creek Unit. The profiles do collectively suggest that the deepest penetration of tank related fluids is found in probe hole C3832. The water potential data from 299-W10-27?s H2 unit, the unit where most of the contaminants reside in the TX probe holes, are consistent with a draining profile. Despite the evidence that elevated EC values may be present in all three probe holes to their depth of refusal, the concentrations of long-term risk drivers are not large. The inventories of potential contaminants of concern, nitrate, technetium-99, uranium, and chromium, are provided. In addition, in situ desorption Kd values for these contaminants are provided. For conservative modeling purposes, we recommend using Kd values of 0 mL/g for nitrate and technetium-99, a value of 1 mL/g for uranium, and 10 mL/g for chromium to represent the entire vadose zone profile from the bottoms of the tanks to the water table. These conservative Kd values along with the provided inventories in the vadose zone sediments obtained from the three probe holes can be used in long-term risk projections that rely on estimates of water recharge and vadose zone and aquifer transport calculations.

Serne, R JEFFREY.; Bjornstad, Bruce N.; Horton, Duane G.; Lanigan, David C.; Lindenmeier, Clark W.; Lindberg, Michael J.; Clayton, Ray E.; LeGore, Virginia L.; Orr, Robert D.; Kutnyakov, Igor V.; Baum, Steven R.; Geiszler, Keith N.; Valenta, Michelle M.; Vickerman, Tanya S.

2004-04-01T23:59:59.000Z

267

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

268

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

269

AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE  

SciTech Connect

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. [Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

2007-04-10T23:59:59.000Z

270

Accelerated aging of GaAs concentrator solar cells  

DOE Green Energy (OSTI)

An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

Gregory, P.E.

1982-04-01T23:59:59.000Z

271

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence  

E-Print Network (OSTI)

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence October 1997; accepted for publication 5 January 1998 Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed

Bowers, John

272

Optical injection and coherent control of a ballistic charge current in GaAsAlGaAs quantum wells  

E-Print Network (OSTI)

Optical injection and coherent control of a ballistic charge current in GaAs?AlGaAs quantum wells of Hache´ et al.,2,3 but in this article we report injection into the plane of GaAs/AlGaAs quantum wells specific to quantum wells. Although we expect the underlying physics of injection and control of currents

Sipe,J. E.

273

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network (OSTI)

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

274

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures  

E-Print Network (OSTI)

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high materials for green, blue, and UV light emitting diodes (LED) [1-2]. It is known that huge piezoelectric

Wetzel, Christian M.

275

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

276

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

277

J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

278

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

279

Free carrier accumulation at cubic AlGaN/GaN heterojunctions  

Science Conference Proceedings (OSTI)

Cubic Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The experimental potential profile indicates that the unintentionally doped layers show n-type behavior and accumulation of free electrons at the interface with a density of 5.1 x 10{sup 11}/cm{sup 2}, about one order of magnitude less than in wurtzite AlGaN/GaN junctions. A combination of electron holography and cathodoluminescence measurements yields a conduction-to-valence band offset ratio of 5:1 for the cubic AlGaN/GaN interface, which also promotes the electron accumulation. Band diagram simulations show that the donor states in the AlGaN layer provide the positive charges that to a great extent balance the two-dimensional electron gas.

Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Tschumak, E.; Zado, A.; As, D. J. [Department of Physics, Universitaet Paderborn, D-33098 Paderborn (Germany)

2012-04-02T23:59:59.000Z

280

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and ...

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

U.S. Price of Liquefied Natural Gas Imports by Point of Entry  

U.S. Energy Information Administration (EIA) Indexed Site

2007 2008 2009 2010 2011 2012 View 2007 2008 2009 2010 2011 2012 View History U.S. Total 7.07 10.03 4.59 4.94 5.63 4.27 1985-2012 Cameron, LA -- -- 4.78 5.78 8.13 10.54 2007-2012 Cove Point, MD 7.26 9.07 4.05 5.37 5.30 13.82 2003-2012 Elba Island, GA 6.79 9.71 3.73 4.39 4.20 2.78 2003-2012 Everett, MA 7.32 10.33 5.87 4.79 4.77 3.70 2003-2012 Freeport, TX -- 13.83 4.51 6.96 9.27 10.53 2007-2012 Golden Pass, TX -- -- -- 7.90 5.36 -- 2007-2012 Gulf Gateway, LA 8.36 -- -- -- 2004-2010 Gulf LNG, MS -- -- -- -- 12.93 -- 2007-2012 Lake Charles, LA 6.88 7.63 3.32 4.05 4.18 2.10 2003-2012 Neptune Deepwater Port -- -- -- 6.41 -- -- 2007-2012 Northeast Gateway -- 12.54 6.71 5.41 -- -- 2007-2012 Sabine Pass, LA -- 11.82 4.21 5.39 7.58 7.99 2007-2012

282

Plasma Damage in p-GaN  

SciTech Connect

The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.

Cao, X.A.; Dang, G.T.; Hickman, R.A.; Pearton, S.J.; Ren, F.; Shul, R.J.; Van Hove, J.M.; Zhang, A.P.; Zhang, L.

1999-06-30T23:59:59.000Z

283

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

284

U.S. Liquefied Natural Gas Imports by Point of Entry  

Gasoline and Diesel Fuel Update (EIA)

0 3,556 6,212 2007-2012 From Oman 0 0 0 0 0 0 1997-2012 Lake Charles, LA 1999-2006 From Peru 0 0 0 16,045 16,620 2007-2011 Cameron, LA 0 0 0 0 6,845 2007-2011 Freeport, TX 0 0 0...

285

U.S. Liquefied Natural Gas Imports by Point of Entry  

U.S. Energy Information Administration (EIA)

Freeport, TX: 0: 0: 2,833: 0: 2,969 : 2007-2011: Gulf LNG, MS: 0: 0: 0: 0: 2,954 : 2007-2011: Lake Charles, LA: 50,765: 6,106: 20,489: 3,078: 0 : 2004-2011: Northeast ...

286

U.S. Liquefied Natural Gas Exports by Point of Exit  

U.S. Energy Information Administration (EIA) Indexed Site

To Russia 1,895 0 0 0 0 0 2007-2012 Kenai, AK 1,895 0 0 0 0 2006-2011 To South Korea 0 0 2,735 11,809 9,143 0 2007-2012 Freeport, TX 0 0 2,735 2,861 6,242 2007-2011 Sabine...

287

U.S. Price of Liquefied Natural Gas Exports by Point of Exit  

U.S. Energy Information Administration (EIA) Indexed Site

To Russia 12.12 -- -- -- -- -- 2007-2012 Kenai, AK 12.12 -- -- -- -- 2006-2011 To South Korea -- -- 6.30 7.54 9.98 -- 2007-2012 Freeport, TX -- -- 6.30 8.09 10.89 2007-2011 Sabine...

288

U.S. Liquefied Natural Gas Exports by Point of Exit  

U.S. Energy Information Administration (EIA) Indexed Site

Portugal 2012-2013 Sabine Pass, LA 2012-2012 To Russia 0 0 0 0 0 0 2007-2013 To South Korea 0 0 0 0 0 0 2009-2013 Freeport, TX 2011-2011 Sabine Pass, LA 2011-2011 To Spain 0 0 0...

289

U.S. Price of Liquefied Natural Gas Exports by Point of Exit  

U.S. Energy Information Administration (EIA) Indexed Site

Sabine Pass, LA 2012-2012 To Russia 0.00 0.00 0.00 0.00 0.00 0.00 2007-2013 To South Korea 0.00 0.00 0.00 0.00 0.00 0.00 2009-2013 Freeport, TX 2011-2011 Sabine Pass, LA...

290

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

291

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

292

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits  

Science Conference Proceedings (OSTI)

A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. ...

Choong H. Hyun; M. S. Shur; N. C. Cirillo

2006-11-01T23:59:59.000Z

293

Nanocrystals cylindrical microcavities exploiting thin-walled InGaAs/GaAs microtubes  

Science Conference Proceedings (OSTI)

This paper relies on the design and fabrication of CdSe/ZnS core/shell colloidal nanocrystals (NCs) cylindrical microcavities for microphotonics applications. The fabrication technology relies on the release of the strain in strained heterostructures, ... Keywords: Colloidal nanocrystals, InGaAs/GaAs microtubes, Strained multilayer

C. Giordano; M. T. Todaro; A. Salhi; L. Martiradonna; I. Viola; A. Passab; L. Carbone; G. Gigli; A. Passaseo; M. De Vittorio

2007-05-01T23:59:59.000Z

294

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

295

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

DOE Green Energy (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

296

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED  

Science Conference Proceedings (OSTI)

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm{sup 2}V{sup -1}s{sup -1} at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

Broxtermann, D.; Sivis, M.; Malindretos, J.; Rizzi, A. [IV. physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2012-03-15T23:59:59.000Z

297

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

298

GaN Nanopore Arrays: Fabrication and Characterization  

E-Print Network (OSTI)

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

Wang, Yadong

299

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

300

Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape ...  

Science Conference Proceedings (OSTI)

... Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape Memory Alloys. Peng Zhao (Dept. of Materials Science and ...

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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301

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

302

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

303

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment  

E-Print Network (OSTI)

Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ...

Palacios, Tomas

304

GaN: Defect and Device Issues  

SciTech Connect

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

1998-11-09T23:59:59.000Z

305

GaAs photoconductive semiconductor switch  

DOE Patents (OSTI)

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

306

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network (OSTI)

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

307

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Fainman, "Influence of chlorine on etched sidewalls inFainman, Influence of chlorine on etched sidewalls inthe RIBE of GaAs with chlorine (Cl 2 ), ion beam sputtering

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

308

JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

309

K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

310

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes  

E-Print Network (OSTI)

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

Cornelius S. Bausch; Aune Koitme; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

2013-05-06T23:59:59.000Z

311

Recent progress in InGaAsSb/GaSb TPV devices  

DOE Green Energy (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

312

GaNPAs Solar Cells Lattice-Matched To GaP: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Geisz, J. F.; Friedman, D. J.; Kurtz, S.

2002-05-01T23:59:59.000Z

313

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

314

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

315

~tx22C0.ptx  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

+ + + + + STUDYING THE COMMUNICATIONS REQUIREMENTS OF ELECTRIC UTILITIES TO INFORM FEDERAL SMART GRID POLICIES + + + + + PUBLIC MEETING + + + + + THURSDAY, JUNE 17, 2010 + + + + + The Public Meeting was held in Room 8E069 at the Department of Energy, Forrestal Building, 1000 Independence Avenue, S.W., Washington, D.C., at 10:00 a.m., Scott Blake Harris, Chair, presiding. PRESENT: BECKY BLALOCK SHERMAN J. ELLIOTT LYNNE ELLYN SCOTT BLAKE HARRIS JIM INGRAHAM JIM L. JONES MICHAEL LANMAN KYLE McSLARROW ROY PERRY 202-234-4433 Neal R. Gross & Co., Inc. Page 2

316

~txF74.ptx  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WEDNESDAY WEDNESDAY OCTOBER 19, 2011 + + + + + The Electricity Advisory Committee met in the Conference Center of the National Rural Electric Cooperative Association Headquarters, 4301 Wilson Boulevard, Arlington, Virginia, at 2:00 p.m., Richard Cowart, Chair, presiding. MEMBERS PRESENT RICHARD COWART, Regulatory Assistance Project, Chair THE HONORABLE ROBERT CURRY, New York State Public Service Commission JOSE DELGADO, American Transmission Company (Ret.) ROGER DUNCAN, Austin Energy (Ret.) ROBERT GRAMLICH, American Wind Energy Association MICHAEL HEYECK, American Electric Power JOSEPH KELLIHER, NextEra Energy, Inc. EDWARD KRAPELS, Anbaric Holdings RALPH MASIELLO, KEMA RICH MEYER, National Rural Electric

317

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from {approx}1 x 10{sup 7} to {approx}5 x 10{sup 8} cm{sup -2} across the substrate. Typical diameters are {approx}110 nm for GaP NWs and {approx}220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is {approx}0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Li, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Tu, C. W. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2012-01-30T23:59:59.000Z

318

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

319

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amlie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganire, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benot

320

Growth orientation dependent photoluminescence of GaAsN alloys  

SciTech Connect

We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Sato, Shinichiro [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

2012-01-16T23:59:59.000Z

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

322

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

323

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser  

SciTech Connect

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-30T23:59:59.000Z

324

Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence  

Science Conference Proceedings (OSTI)

A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.

Chin, A.K.; Keramidas, V.G.; Johnston, W.D. Jr.; Mahajan, S.; Roccasecca, D.D.

1980-02-01T23:59:59.000Z

325

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization  

DOE Green Energy (OSTI)

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. The GaInSb layers were grown by organometallic vapor phase epitaxy (OMVPE) and the InGaAsSb lattice-matched layers were grown by liquid phase epitaxy (LPE). Device fabrication steps include unannealed p-type ohmic contacts, annealed Sn/Au n-type ohmic contacts, and a thick Ag top-surface contact using a lift-off process. Devices are characterized primarily by dark I-V, photo I-V, and quantum efficiency measurements, which are correlated to microscopic and macroscopic material properties. Particular emphasis has been on material enhancements to increase quantum efficiency and decrease dark saturation current density. TPV device performance is presently limited by the base diffusion length, typically 1 to 2 microns.

Hitchcock, C.; Gutmann, R.; Borrego, J.; Ehsani, H.; Bhat, I. [Rensselaer Polytechnic Inst., Troy, NY (United States); Freeman, M.; Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

326

Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells  

Science Conference Proceedings (OSTI)

The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

Baidus, N. V. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Vainberg, V. V. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine); Zvonkov, B. N. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Pylypchuk, A. S., E-mail: pylypchuk@iop.kiev.ua; Poroshin, V. N.; Sarbey, O. G. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)

2012-05-15T23:59:59.000Z

327

Radiation Hard AlGaN Detectors and Imager  

Science Conference Proceedings (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

328

InGaAs and Ge MOSFETs with high ? dielectrics  

Science Conference Proceedings (OSTI)

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy

W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong

2011-04-01T23:59:59.000Z

329

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys ...  

Science Conference Proceedings (OSTI)

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys Based on the ... Resources for the Selection and Use of Interatomic Potentials in Atomistic...

330

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

contractors supported the dismantlement including asbestos removal and concrete cutting, electrical, and HVAC. Project support functions were provided by GA organizations...

331

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 {mu}m  

Science Conference Proceedings (OSTI)

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 {mu}m when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 Degree-Sign C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.

Ye Hong; Song Yuxin; Wang Shumin [Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296 (Sweden); Gu Yi [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-12-15T23:59:59.000Z

332

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots  

Science Conference Proceedings (OSTI)

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2012-04-15T23:59:59.000Z

333

Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb  

DOE Green Energy (OSTI)

GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality.

Dutta, P.S.; Ostrogorsky, A.G.; Gutmann, R.J.

1997-05-01T23:59:59.000Z

334

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

335

II4, Compositionally-Graded Layers Composed of Tandem InGaAs ...  

Science Conference Proceedings (OSTI)

The specification of the 6 miscut is important because it provides step ..... of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions.

336

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm, Mingwei Zhu  

E-Print Network (OSTI)

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photo- luminescence, m's overall power efficiency. Linearly polarized light can be efficiently generated in GaInN/GaN-based light-emitting

Wetzel, Christian M.

337

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-01-01T23:59:59.000Z

338

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor  

Science Conference Proceedings (OSTI)

Keywords: Ga vacancies, GaN growth, gas feeding method, optical property, rapid thermal chemical vapor deposition (RTCVD), yellow luminescence

Sun Jung Kim; Young Hun Seo; Kee Suk Nahm; Yun Bong Hahn; Hyun Wook Shim; Eun-Kyung Suh; Kee Young Lim; Hyung Jae Lee

1999-08-01T23:59:59.000Z

339

Functional Imprinting Structures on GaN-Based Light-Emitting ...  

Science Conference Proceedings (OSTI)

Keywords: GaN, light-emitting diode (LED), imprinting technology, far-field pattern modulation, light extraction. 1. Introduction. GaN-based light-emitting diodes...

340

Bonding and gap states at GaAs-oxide interfaces  

Science Conference Proceedings (OSTI)

The nature of bonding and possible causes of Fermi level pinning at high mobility-high dielectric constant oxide GaAs:HfO"2 interfaces are discussed. It is argued that these are atoms with defective bonding, rather than states due to the bulk semiconductor ... Keywords: GaAs, bonding, interface

John Robertson; Liang Lin

2011-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Elastic properties of Pu metal and Pu-Ga alloys  

Science Conference Proceedings (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

342

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

be applicable to light sources in fiber-optic communication systems.13 However, there have been no reports intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

343

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells  

E-Print Network (OSTI)

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells J. Schörmann,a S and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted wells clear reflection high energy electron diffraction oscillations were observed indicating a two

As, Donat Josef

344

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

345

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN  

E-Print Network (OSTI)

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN Christian in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Detchprohm, Theeradetch

346

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network (OSTI)

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

347

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells  

Science Conference Proceedings (OSTI)

We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 {mu}m) wavelength range.

Nair, Hari P.; Crook, Adam M.; Bank, Seth R. [Microelectronics Research Center, Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Rd, Austin, Texas 78712 (United States); Yu, Kin M. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2012-01-09T23:59:59.000Z

348

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy  

Science Conference Proceedings (OSTI)

We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.

Smakman, E. P.; Garleff, J. K.; Rambabu, P.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ (Netherlands); Young, R. J.; Hayne, M. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2012-04-02T23:59:59.000Z

349

U.S. Price of Liquefied Natural Gas Imports by Point of Entry  

U.S. Energy Information Administration (EIA) Indexed Site

Apr-13 May-13 Jun-13 Jul-13 Aug-13 Sep-13 View Apr-13 May-13 Jun-13 Jul-13 Aug-13 Sep-13 View History U.S. Total 4.90 4.51 8.65 4.59 7.42 9.96 1997-2013 From Canada -- -- -- 13.37 13.54 10.52 2013-2013 Highgate Springs, VT 13.37 13.54 10.52 2013-2013 From Algeria -- -- -- -- -- -- 1989-2013 From Australia -- -- -- -- -- -- 1997-2013 From Brunei -- -- -- -- -- -- 2001-2013 From Egypt -- -- -- -- -- -- 2003-2013 Cameron, LA 2011-2011 Elba Island, GA 2011-2012 Freeport, TX 2011-2011 Gulf LNG, MS 2011-2011 From Equatorial Guinea -- -- -- -- -- -- 2007-2013 From Indonesia -- -- -- -- -- -- 1997-2013 From Malaysia -- -- -- -- -- -- 1999-2013 From Nigeria -- -- -- -- -- 15.74 1994-2013 Cove Point, MD 15.74 2011-2013 From Norway -- -- -- -- 14.85 14.85 2007-2013

350

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

DOE Green Energy (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

351

Dielectrics for GaN based MIS-diodes  

SciTech Connect

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Ren, F.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1998-02-01T23:59:59.000Z

352

Atomic hydrogen cleaning of polarized GaAs photocathodes  

DOE Green Energy (OSTI)

Atomic hydrogen cleaning followed by heat cleaning at 450 C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600 C heat cleaning. The low-temperature cleaning technique was successfully applied to thin, strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 seconds was extended by a factor of 100.

Maruyama, Takashi

2003-04-03T23:59:59.000Z

353

Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-08-01T23:59:59.000Z

354

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra to predict the correct result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-02-01T23:59:59.000Z

355

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells  

E-Print Network (OSTI)

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells H. C. Chui, S. M. Lord report the first observation of intersubband transitions in In,Ga, -#s(y=O.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain

Fejer, Martin M.

356

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer  

Science Conference Proceedings (OSTI)

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-{mu}m-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.

Shen, X. Q.; Takahashi, T.; Kawashima, H.; Ide, T.; Shimizu, M. [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)

2012-07-16T23:59:59.000Z

357

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network (OSTI)

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

358

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

359

Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep...

360

Lattice vibrations of pure and doped GaSe  

Science Conference Proceedings (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

HH5, Antiferromagnetic Interlayer Exchange Couplings in Ga  

Science Conference Proceedings (OSTI)

Author(s), Sun Jae Chung, Sanghoon Lee, Brian J. Kirby, Julie A. Borchers, ... LATE NEWS: KK3, Non-Catalytic Synthesis of GaN Nanostructures at Low...

362

Preparation of GaAs photocathodes at low temperature  

SciTech Connect

The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated.

Mulhollan, G.; Clendenin, J.; Tang, H.

1996-10-01T23:59:59.000Z

363

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Trinidad and Tobago (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul...

364

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

365

Elba Island, GA Liquefied Natural Gas Total Imports (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Total Imports (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5...

366

GaAs Films Prepared by RF-Magnetron Sputtering  

DOE Green Energy (OSTI)

The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

2001-08-01T23:59:59.000Z

367

Micro Raman Spectroscopy of Annealed Erbium Implanted GaN  

E-Print Network (OSTI)

Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 510? cm?. The implanted samples were annealed in nitrogen atmosphere ...

Vajpeyi, Agam P.

368

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Equatorial Guinea (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Equatorial Guinea (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

369

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Nigeria (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Nigeria (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

370

Cathodoluminescence Microanalysis of Suspended GaN Nano ...  

Science Conference Proceedings (OSTI)

CL from bulk GaN is dominated by the ~3.4 eV near-band-edge emission. In contrast, the suspended nano-membranes emit a broad defect associated emission...

371

BB2, Novel Cs-Free GaN Photocathodes  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

372

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN  

Science Conference Proceedings (OSTI)

We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320 K range. We first show that the effective lifetime of QW excitons {tau} increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing {tau} depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs.

Corfdir, P.; Dussaigne, A.; Giraud, E.; Ganiere, J.-D.; Grandjean, N.; Deveaud-Pledran, B. [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Teisseyre, H. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Suski, T.; Grzegory, I. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Lefebvre, P. [Laboratoire Charles Coulomb - UMR5221 - CNRS - Universite Montpellier 2, 34095 Montpellier (France)

2012-02-01T23:59:59.000Z

373

Modeling of InGaSb thermophotovoltaic cells and materials  

DOE Green Energy (OSTI)

A closed form computer program has been developed for the simulation and optimization of In{sub x}Ga{sub 1{minus}x}Sb thermophotovoltaic cells operating at room temperature. The program includes material parameter models of the energy bandgap, optical absorption constant, electron and hole mobility, intrinsic carrier concentration and index of refraction for any composition of GaInSb alloys.

Zierak, M.; Borrego, J.M.; Bhat, I.; Gutmann, R.J. [Rensselaer Polytechnic Inst., Troy, NY (United States); Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

374

SEU design consideration for MESFETs on LT GaAs  

SciTech Connect

Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.

Weatherford, T.R.; Radice, R.; Eskins, D. [Naval Postgraduate School, Monterey, CA (United States)] [and others

1997-12-01T23:59:59.000Z

375

Influence of defect formation as a result of incorporation of a Mn {delta} layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells  

Science Conference Proceedings (OSTI)

The influence of defect formation upon the deposition of a Mn {delta} layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied.

Gorshkov, A. P., E-mail: gorskovap@phys.unn.ru; Karpovich, I. A.; Pavlova, E. D.; Kalenteva, I. L. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

2012-02-15T23:59:59.000Z

376

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures  

E-Print Network (OSTI)

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures, U.S.A. ABSTRACT Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs the device lifetime in a non-destructive mode. INTRODUCTION Group ­ III nitride light emitting diodes (LEDs

Wetzel, Christian M.

377

Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells  

Science Conference Proceedings (OSTI)

Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.

Toropov, A. A., E-mail: toropov@beam.ioffe.ru; Kaibyshev, V. Kh.; Terent'ev, Ya. V.; Ivanov, S. V.; Kop'ev, P. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-02-15T23:59:59.000Z

378

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires  

SciTech Connect

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.

Dobrovolsky, A.; Stehr, J. E.; Chen, S. L.; Chen, W. M.; Buyanova, I. A. [Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden); Kuang, Y. J. [Department of Physics, University of California, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Materials Science and Engineering, La Jolla, California 92093 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093 (United States)

2012-10-15T23:59:59.000Z

379

Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs  

SciTech Connect

We form self-assembled GaSb type-II nanorods on a vicinal (111)B GaAs substrate by molecular beam epitaxy and study their optical anisotropy. The GaSb nanorods are elongated and aligned along the [-1 0 1] direction, where the average length, width, and height are about 84, 30, and 2.5 nm. In polarized photoluminescence (PL) measurements, the peak of the GaSb nanorods is observed at about 1.1 eV, where the PL intensity is largest for the [-1 0 1] polarization and smallest for the polarization perpendicular to it. The degree of polarization is more than 20% and depends on the recombination energy. By comparing with a theoretical model based on 4 x 4 Luttinger-Kohn Hamiltonian, we find that the experimental results are explained by considering the Sb/As inter-diffusion and the nanorod height distribution.

Kawazu, Takuya; Noda, Takeshi; Mano, Takaaki; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Akiyama, Yoshihiro [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan); Sakaki, Hiroyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan)

2011-12-05T23:59:59.000Z

380

EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

382

JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

383

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network (OSTI)

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

384

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors  

Science Conference Proceedings (OSTI)

Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure

Hung, S.T. [Feng Chia University, Taichung, Taiwan; Chung, Chi-Jung [Feng Chia University, Taichung, Taiwan; Chen, Chin Ching [University of Florida, Gainesville; Lo, C. F. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

385

U.S. Liquefied Natural Gas Exports by Point of Exit  

U.S. Energy Information Administration (EIA) Indexed Site

21 15 12 8 9 12 1997-2013 21 15 12 8 9 12 1997-2013 To Brazil 0 0 0 0 0 0 2010-2013 Freeport, TX 2011-2012 Sabine Pass, LA 2011-2011 To Canada 6 9 8 5 8 7 2007-2013 Sweetgrass, MT 6 9 8 5 8 7 2012-2013 To Chile 0 0 0 0 0 0 2011-2013 Sabine Pass, LA 2011-2011 To China 0 0 0 0 0 0 2011-2013 Kenai, AK 2011-2011 Sabine Pass, LA 2011-2011 To India 0 0 0 0 0 0 2010-2013 Freeport, TX 2011-2012 Sabine Pass, LA 2011-2011 To Japan 0 0 0 0 0 0 2010-2013 Cameron, LA 2011-2011 Kenai, AK 2011-2012 Sabine Pass, LA 2012-2012 To Mexico 15 6 3 3 2 4 1997-2013 Nogales, AZ 10 6 3 3 2 4 2012-2013 Otay Mesa, CA 5 2011-2013 To Portugal 2012-2012 Sabine Pass, LA 2012-2012 To Russia 0 0 0 0 0 0 2007-2013 To South Korea 0 0 0 0 0 0 2009-2013 Freeport, TX

386

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

387

Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer  

Science Conference Proceedings (OSTI)

The use of low temperature grown GaAs (LT GaAs) buffer layer in GaAs FETs is shown via computer simulation and experimental measurement to reduce ion-induced charge collection by two to three orders of magnitude. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the FETs. Error rate calculations indicate that the soft error rate of LT GaAs integrated circuits will be reduced by several orders of magnitude when compared to conventional FET-based GaAs ICs.

McMorrow, D.; Weatherford, T.R.; Curtice, W.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Tran, L.H.; Campbell, A.B. [Naval Research Lab., Washington, DC (United States)

1995-12-01T23:59:59.000Z

388

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

389

High Voltage GaN Schottky Rectifiers  

SciTech Connect

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25T23:59:59.000Z

390

CC2, Two-Dimensional Electron Gas in In X Al 1-X N/Aln/GaN ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

391

Phonon Knudsen flow in GaAs/AlAs superlattices  

DOE Green Energy (OSTI)

The measured in-plane thermal conductivity, {delta}{sub SL} of GaAs/AlAs superlattices with even moderate layer thicknesses are significantly smaller than the weighted average, {delta}{sub l} = 67 W/Km, of the bulk GaAs and AlAs conductivities. One expects a suppression of the thermal conductivity to that of an actual Al{sub 0.5}Ga{sub 0.5}As alloy when the thickness of the GaAs and AlAs layers approaches that of a single monolayer. However, the observed superlattice thermal conductivity remains suppressed even at layer thickness {approx_gt} 10 nm. The low thermal conductivities, and very high mobilities, make n-doped GaAs/AlAs superlattices attractive possibilities for thermoelectric devices. With Molecular-Beam-Epitaxial grown GaAs/AlAs superlattices one can expect the individual GaAs and AlAs layers to be extremely clean. Defect and/or alloy scattering is limited to be near the heterostructure interfaces. The authors estimate the room-temperature phonon mean-free-path to be 42 (22) nm for the longitudinal (transverse) mode and thus comparable to or smaller than the layer thicknesses. Thus they expect an important phonon scattering at the interfaces. They study this phonon scattering at the superlattice interfaces assuming a Knudsen flow characterized by diffusive scattering. The solid curve in the figure shows the Knudsen-flow theory estimated for the superlattice thermal conductivity which shows a significant reduction when the layer thickness is shorter than the estimated phonon mean free paths.

Hyldgaard, P.; Mahan, G.D. [Oak Ridge National Lab., TN (United States). Solid State Div.]|[Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

1995-09-01T23:59:59.000Z

392

Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy  

SciTech Connect

We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 Rue des Martyrs, 38054 Grenoble cedex 9 (France); Doisneau, B. [SIMaP, Grenoble INP, Domaine Universitaire, BP 75, 38402 Saint Martin d'Heres (France); Sarigiannidou, E. [LMGP, Grenoble INP, 3 Parvis Louis Neel, BP 257, 38016 Grenoble cedex 1 (France)

2011-08-01T23:59:59.000Z

393

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

394

Nanostructuring of silicon substrates for the site-controlled growth of GaAs/In0.15Ga0.85As/GaAs nanostructures  

Science Conference Proceedings (OSTI)

We report the optimization of electron beam lithography and inductively coupled plasma (ICP) dry etching processes to fabricate pre-patterned Si (100) substrates with sub-100nm holes with controlled size and shape. An efficient in situ cleaning sequence ... Keywords: Electron beam lithography, ICP dry etching, InGaAs quantum dots, MBE growth, Nanostructuring of silicon

Muhammad Usman; Tariq Alzoubi; Mohamed Benyoucef; Johann Peter Reithmaier

2012-09-01T23:59:59.000Z

395

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

396

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network (OSTI)

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

397

High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report the highest mobility values above 2000 cm{sup 2}/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Inagaki, Makoto [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan); Yamaguchi, Masafumi [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan)

2012-11-26T23:59:59.000Z

398

Black-body radiation shift of the Ga$^{+}$ clock transition  

E-Print Network (OSTI)

The blackbody radiation shift of the Ga$^+$ $4s^2 \\ ^1S^e_0 \\to 4s4p \\ ^3P^o_0$ clock transition is computed to be $-$$0.0140 \\pm 0.0048$ Hz at 300 K. The small shift is consistent with the blackbody shifts of the clock transitions of other group III ions which are of a similar size. The polarizabilities of the Ga$^+$ $4s^2 \\ ^1S^e_0$, $4s4p \\ ^3P^o_0$, and $4s4p \\ ^1P^o_1$ states were computed using the configuration interaction method with an underlying semi-empirical core potential. A byproduct of the analysis involved large scale calculations of the low lying spectrum and oscillator strengths of the Ga$^{2+}$ ion.

Cheng, Yongjun

2013-01-01T23:59:59.000Z

399

Aug. 8-9, 2006 HAPL meeting, GA Open Discussion on Advanced Armor  

E-Print Network (OSTI)

Aug. 8-9, 2006 HAPL meeting, GA 1 Open Discussion on Advanced Armor Concepts Moderated by A. René in case the W armor does not work. #12;Aug. 8-9, 2006 HAPL meeting, GA 3 Roman Aquaduct at Pont du Gard, Provence #12;Aug. 8-9, 2006 HAPL meeting, GA 4 Possible Advanced Armor Options Include: · Engineered

Raffray, A. René

400

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua  

E-Print Network (OSTI)

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua Department of Electrical-threshold current injection efficiency of quantum well QW lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW

Gilchrist, James F.

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

ANN-based GA for generating the sizing curve of stand-alone photovoltaic systems  

Science Conference Proceedings (OSTI)

Recent advances in artificial intelligence techniques have allowed the application of such technologies in real engineering problems. In this paper, an artificial neural network-based genetic algorithm (ANN-GA) model was developed for generating the ... Keywords: ANN, ANN-GA, GA, Prediction, Sizing curve, Stand-alone PV system

Adel Mellit

2010-05-01T23:59:59.000Z

402

Luminescence Enhancement in InGaN and ZnO by Water Vapor ...  

Science Conference Proceedings (OSTI)

Dependence of Ag/In Ratio of AgInS2 Crystals Grown by Hot-Press Method ... Analysis of Temperature Characteristics of InGaP/InGaAs/Ge Triple-Junction Solar Cell ... Luminescence Enhancement in InGaN and ZnO by Water Vapor Remote...

403

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network (OSTI)

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

404

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network (OSTI)

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

405

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs  

E-Print Network (OSTI)

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

Piner, Edwin L.

406

Vertically aligned GaN nanotubes - Fabrication and current image analysis  

Science Conference Proceedings (OSTI)

In this work, we present a one step formation method of nanotubes on GaN film, and then map out local current of nanotubes. GaN nanotubes were formed by inductively coupled plasma (ICP) etching and found that tops of these nanotubes were hexagonal with ... Keywords: C-AFM, FESEM, GaN, ICP, Nanotubes

Shang-Chao Hung; Yan-Kuin Su; Shoou-Jinn Chang; Y. H. Chen

2006-11-01T23:59:59.000Z

407

Epitaxial EuO thin films on GaAs  

SciTech Connect

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K. [Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States); Mack, S.; Awschalom, D. D. [Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

2010-09-13T23:59:59.000Z

408

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

409

AlP/GaP distributed Bragg reflectors  

SciTech Connect

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

410

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

411

Electron Hall Mobility in GaAsBi  

Science Conference Proceedings (OSTI)

We present measurements of the electron Hall mobility in n-type GaAs{sub 1-x}Bi{sub x} epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration ({ge} 1.6%) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.

Kini, R. N.; Bhusal, L.; Ptak, A. J.; France, R.; Mascarenhas, A.

2009-01-01T23:59:59.000Z

412

Analyzing the growth of In{sub x}Ga{sub 1-x}N/GaN superlattices in self-induced GaN nanowires by x-ray diffraction  

Science Conference Proceedings (OSTI)

Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with In{sub x}Ga{sub 1-x}N quantum wells inserted to form an axial superlattice. From the {omega}-2{theta} scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and the In content in this layer. The axial growth rate of the In{sub x}Ga{sub 1-x}N quantum wells is significantly enhanced, which we attribute to increased Ga diffusion along the nanowire sidewalls in the presence of In.

Woelz, M.; Kaganer, V. M.; Brandt, O.; Geelhaar, L.; Riechert, H.

2011-06-27T23:59:59.000Z

413

Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs: Preprint  

Science Conference Proceedings (OSTI)

This conference paper describes the deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semiconductor InGaAsN. A series of as-grown, metal-organic chemical vapor deposited samples having varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additional defects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.

Johnston, S. W.; Ahrenkiel, R. K.; Friedman, D. J.; Kurtz, S. R.

2002-05-01T23:59:59.000Z

414

Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets  

Science Conference Proceedings (OSTI)

Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

Chu, Kuei-Yi [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China); Chiang, Meng-Hsueh, E-mail: mhchiang@niu.edu.tw; Cheng, Shiou-Ying, E-mail: sycheng@niu.edu.tw [National II an University, Department of Electronic Engineering (China); Liu, Wen-Chau [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China)

2012-02-15T23:59:59.000Z

415

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1993-01-01T23:59:59.000Z

416

Ultra High p-doping Material Research for GaN Based Light Emitters  

Science Conference Proceedings (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

417

Using GA-ANN algorithm to predicate coal bump energy  

Science Conference Proceedings (OSTI)

A GA-ANN network was constructed for preidcating coal bump energy, based on the 300 training samples form simulated results with PFC2D software for different coal particle stiffness. It was tested that the average relative error of fitted-output value ... Keywords: artificial neural network, coal bump, energy, genetic algorithm, predication

Yunliang Tan; Tongbin Zhao; Zhigang Zhao

2009-06-01T23:59:59.000Z

418

Properties of H, O and C in GaN  

DOE Green Energy (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

419

Optimization on Seawater Desulfurization Efficiency Based on LSSVM-GA  

Science Conference Proceedings (OSTI)

Seawater flue gas Desulfurization (SFGD) was adopted in many coal-fired power plants of littoral for its low cost and high desulfurization efficiency. Operating Parameters would seriously affect SFGD efficiency, the desulfurization efficiency can be ... Keywords: SFGD, desulfurization efficiency, LSSVM, GA, optimization

Liu Ding-ping; Li Xiao-wei

2010-10-01T23:59:59.000Z

420

Development of ZnO:Ga as an Ultrafast Scintillator  

DOE Green Energy (OSTI)

We report on several methods for synthesizing the ultra-fast scintillator ZnO(Ga), and measurements of the resulting products. This material has characteristics that make it an excellent alpha detector for tagging the time and direction of individual neutrons produced by t-d and d-d neutron generators (associated particle imaging). The intensity and decay time are strongly dependent on the method used for dopant incorporation. We compare samples made by diffusion of Ga metal to samples made by solid state reaction between ZnO and Ga2O3 followed by reduction in hydrogen. The latter is much more successful and has a pure, strong near-band-edge fluorescence and an ultra-fast decay time of the x-ray-excited luminescence. The luminescence increases dramatically as the temperature is reduced to 10K. We also present results of an alternate low-temperature synthesis that produces luminescent particles with a more uniform size distribution. We examine possible mechanisms for the bright near-band-edge scintillation and favor the explanation that it is due to the recombination of Ga3+ donor electrons with ionization holes trapped on H+ ion acceptors.

Bourret-Courchesne, E.D.; Derenzo, S.E.; Weber, M.J.

2008-12-10T23:59:59.000Z

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
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421

Low cost high power GaSB photovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a thermophotovoltaics (TPV) system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; She Hui; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

422

Low cost high power GaSb thermophotovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a TPV system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

423

AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability  

Science Conference Proceedings (OSTI)

Keywords: AlGaAsSb, Hall elements, InAs, Sb, buffer/barriers, deep quantum well, field effect transistors, reliability

S. Miya; S. Muramatsu; N. Kuze; K. Nagase; T. Iwabuchi; A. Ichii; M. Ozaki; I. Shibasaki

1996-03-01T23:59:59.000Z

424

Characterization and device performance of (AgCu)(InGa)Se2 absorber layers  

DOE Green Energy (OSTI)

The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

2009-06-08T23:59:59.000Z

425

Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers  

DOE Green Energy (OSTI)

(Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (?h?)2 vs. h?, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

Boyle, Jonathan; Hanket, Gregory; Shafarman, William

2009-06-09T23:59:59.000Z

426

Other Participants 2004 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

, Evans , GA Lamp High School , Montgomery , AL Liberty Christian Academy , Jerome , ID Lincoln High School , Portland , OR Milby High School , Houston , TX Mira Loma High School...

427

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

428

Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices  

Science Conference Proceedings (OSTI)

Reverse-bias stress testing has been applied to a large set of more than 50 AlGaN/GaN high electron mobility transistors, which were fabricated using the same process but with different values of the AlN mole fraction and the AlGaN barrier-layer thickness, as well as different substrates (SiC and sapphire). Two sets of devices having different defect types and densities, related to the different growth conditions and the choice of nucleation layer, were also compared. When subjected to gate drain (or gate-to-drain and source short-circuited) reverse-bias testing, all devices presented the same time-dependent failure mode, consisting of a significant increase in the gate leakage current. This failure mechanism occurred abruptly during step-stress experiments when a certain negative gate voltage, or critical voltage, was exceeded or, during constant voltage tests, at a certain time, defined as time to breakdown. Electroluminescence (EL) microscopy was systematically used to identify localized damaged areas that induced an increase of gate reverse current. This current increase was correlated with the increase of EL intensity, and significant EL emission during tests occurred only when the critical voltage was exceeded. Focused-ion-beam milling produced cross-sectional samples suitable for electron microscopy observation at the sites of failure points previously identified by EL microscopy. In highdefectivity devices, V-defects were identified that were associated with initially high gate leakage current and corresponding to EL spots already present in untreated devices. Conversely, identification of defects induced by reverse-bias testing proved to be extremely difficult, and only nanometer-size cracks or defect chains, extending vertically from the gate edges through the AlGaN/GaN heterojunction, were found. No signs of metal/semiconductor interdiffusion or extended defective areas were visible.

Cullen, David A [ORNL; Smith, David J [Arizona State University; Passaseo, Adriana [Consiglio Nazionale delle Ricerche; Tasco, Vittorianna [Consiglio Nazionale delle Ricerche; Stocco, Antonio [Universita di Padova; Meneghini, Matteo [Universita di Padova; Meneghesso, Gaudenzio [Universita di Padova; Zanoni, Enrico [Universita di Padova

2013-01-01T23:59:59.000Z

429

GaSb substrates with extended IR wavelength for advanced space based applications  

SciTech Connect

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

2009-05-01T23:59:59.000Z

430

Two-color picosecond experiments on anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells  

E-Print Network (OSTI)

quantum wells S. C. Hohng and D. S. Kima) Department of Physics and Condensed Matter Research Institute in GaAs/AlGaAs asymmetric double quantum wells. Direct evidence for forbidden absorption is shown heterojunctions and asymmetric double quan- tum wells was found and its origin is still being hotly de- bated

Hohng, Sung Chul

431

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Conference Proceedings (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung, Keun Man Song, Young Su Choi, Hyeong-Ho Park, Hyun-Beom Shin, Ho Kwan Kang, Jaejin Lee

2013-01-01T23:59:59.000Z

432

Optically pumped InxGa???xN/InyGa???yN multiple quantum well vertical cavity surface emitting laser operating at room temperature.  

E-Print Network (OSTI)

Room temperature vertical cavity lasing at the wavelength of 433nm has been successfully realized in InxGa???xN/InyGa???yN multiple quantum well without Bragg mirrors under photo-excitation. At high excitation intensity, ...

Chen, Zhen

433

~txF7D.ptx  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

THURSDAY THURSDAY OCTOBER 20, 2011 + + + + + The Electricity Advisory Committee met, in the Conference Center of the National Rural Electric Cooperative Association Headquarters, 4301 Wilson Boulevard, Arlington, Virginia, at 8:00 a.m., Richard Cowart, Chair, presiding. MEMBERS PRESENT RICHARD COWART, Regulatory Assistance Project, Chair RICK BOWEN, Alcoa RALPH CAVANAGH, Natural Resources Defense Council THE HONORABLE ROBERT CURRY, New York State Public Service Commission JOSE DELGADO, American Transmission Company (Ret.) ROGER DUNCAN, Austin Energy (Ret.) ROBERT GRAMLICH, American Wind Energy Association MICHAEL HEYECK, American Electric Power JOSEPH KELLIHER, NextEra Energy, Inc. EDWARD KRAPELS, Anbaric Holdings

434

Micro-Grids for Colonias (TX)  

Science Conference Proceedings (OSTI)

This report describes the results of the final implementation and testing of a hybrid micro-grid system designed for off-grid applications in underserved Colonias along the Texas/Mexico border. The project is a federally funded follow-on to a project funded by the Texas State Energy Conservation Office in 2007 that developed and demonstrated initial prototype hybrid generation systems consisting of a proprietary energy storage technology, high efficiency charging and inverting systems, photovoltaic cells, a wind turbine, and bio-diesel generators. This combination of technologies provided continuous power to dwellings that are not grid connected, with a significant savings in fuel by allowing power generation at highly efficient operating conditions. The objective of this project was to complete development of the prototype systems and to finalize and engineering design; to install and operate the systems in the intended environment, and to evaluate the technical and economic effectiveness of the systems. The objectives of this project were met. This report documents the final design that was achieved and includes the engineering design documents for the system. The system operated as designed, with the system availability limited by maintenance requirements of the diesel gensets. Overall, the system achieved a 96% availability over the operation of the three deployed systems. Capital costs of the systems were dependent upon both the size of the generation system and the scope of the distribution grid, but, in this instance, the systems averaged $0.72/kWh delivered. This cost would decrease significantly as utilization of the system increased. The system with the highest utilization achieved a capitol cost amortized value of $0.34/kWh produced. The average amortized fuel and maintenance cost was $0.48/kWh which was dependent upon the amount of maintenance required by the diesel generator. Economically, the system is difficult to justify as an alternative to grid power. However, the operational costs are reasonable if grid power is unavailable, e.g. in a remote area or in a disaster recovery situation. In fact, avoided fuel costs for the smaller of the systems in use during this project would have a payback of the capital costs of that system in 2.3 years, far short of the effective system life.

Dean Schneider; Michael Martin; Renee Berry; Charles Moyer

2012-07-31T23:59:59.000Z

435

TX, RRC District 6 Proved Nonproducing Reserves  

U.S. Energy Information Administration (EIA)

-No Data Reported; --= Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Notes: Includes only those ...

436

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth  

Science Conference Proceedings (OSTI)

Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f{sub t} and f{sub max} in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 OMEGA mum to a GaN 2DEG.

Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K. [Department of ECE, University of California, Santa Barbara, California 93106 (United States) and Department of Materials, University of California, Santa Barbara, California 93106 (United States)

2010-04-05T23:59:59.000Z

437

GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

1999-03-02T23:59:59.000Z

438

Dynamic Model of Hydrogen in GaN  

NLE Websites -- All DOE Office Websites (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

439

A GaAs transceiver chip for optical data transmission  

SciTech Connect

The present article describes a transceiver VLSI chip for optical data transmission, at 1 Gbit/s (1.4 Gbit/s in selected production), made in GaAs technology. The transceiver makes the parallel-to-serial and serial-to-parallel conversion as well as the encoding and decoding of 32 bit data words. The circuit operates in a completely asynchronous mode, allowing the possibility of switching on-off the transmission in few nsec and of using the transceiver not only in point-to-point topologies, but also in flooding topologies (i.e. star connections). The radiation hardness and the relatively low power consumption, respect to TTL, of the GaAs, extend the use of the chip to a large number of applications in present and future high energy physics experimental apparatus.

Mirabelli, G.; Petrolo, E.; Valente, E. (Ist. Nazionale di Fisica Nucleare, Roma (Italy)); Cardarelli, R.; Santonico, R. (Sezione di Roma 2 and Univ. di Roma (Italy). Ist. Nazionale di Fisica Nucleare); Ferrer, M.L. (Lab. Nazionali di Frascati (Italy). Ist. Nazionale di Fisica Nucleare)

1993-08-01T23:59:59.000Z

440

Method of plasma etching Ga-based compound semiconductors  

SciTech Connect

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Qiu, Weibin; Goddard, Lynford L.

2012-12-25T23:59:59.000Z

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

AlGaAs diode pumped tunable chromium lasers  

DOE Patents (OSTI)

An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

Krupke, William F. (Pleasanton, CA); Payne, Stephen A. (Castro Valley, CA)

1992-01-01T23:59:59.000Z

442

CsBr/GaN Heterojunction Photoelectron Source  

Science Conference Proceedings (OSTI)

Experimental results on a new CsBr/GaN heterojunction photocathode structure are presented. The results indicate a fourfold improvement in photoyield relative to CsBr/Cr photocathodes. A model is presented based on intraband states in CsBr and electron injection from the GaN (with 1% addition of indium) substrate to explain the observed photoyield enhancement. The photocathode lifetime at high current density (>40 A/cm{sup 2}) is limited by laser heating of the small illuminated area. Calculations are presented for sapphire and diamond substrates, indicating a factor of 20 reduction in temperature for the latter. The results are encouraging for the realization of a high photoyield photocathode operating at high current density with long lifetime.

Maldonado, J.R.; /Stanford U., Elect. Eng. Dept.; Liu, Z.; Sun, Y.; /SLAC, SSRL; Schuetter, S.; /Wisconsin U., Madison; Pianetta, P.; /SLAC, SSRL; Pease, R.F.W.; /Stanford U., Elect. Eng. Dept.

2009-04-30T23:59:59.000Z

443

Method of plasma etching GA-based compound semiconductors  

DOE Patents (OSTI)

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Qiu, Weibin; Goddard, Lynford L.

2013-01-01T23:59:59.000Z

444

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

445

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure  

SciTech Connect

High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In{sub x}Ga{sub 1-x}N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and In{sub x}Ga{sub 1-x}N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the In{sub x}Ga{sub 1-x}N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

Strelchuk, V. V., E-mail: Strelch@isp.kiev.ua; Kladko, V. P.; Avramenko, E. A.; Kolomys, O. F.; Safryuk, N. V.; Konakova, R. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Yavich, B. S., E-mail: byavich@soptel.ru [ZAO Svetlana-Optoelectronics (Russian Federation); Valakh, M. Ya.; Machulin, V. F.; Belyaev, A. E. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2010-09-15T23:59:59.000Z

446

www.eia.gov  

U.S. Energy Information Administration (EIA)

Fish River Tap Fairhope Fish River Tap-Fairhope Flat Shoals Uniion City Flat Shoals-Uniion City 586 Freeport 230 Freeport 115 Freeport 230-Freeport 115 Gainesville #2

447

UV-Photoassisted Etching of GaN in KOH  

SciTech Connect

The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n - 3x 10^12Gcm-3) GaN are 2 1000 .min-l. The etching is diffusion limited under our conditions with an activation energy of - 0.8kCal.mol-1. The etched surfaces are rough, but retain their stoichiometry. PEC etching is found to selectively reveal grain boundaries in GaN under low light illumination conditions. At high lamp powers the rates increase with sample temperature and the application of bias to the PEC cell, while they go through a maximum with KOH solution molarity. The etching is diffusion-limited, producing rough surface morphologies that are suitable in a limited number of device fabrication steps. The surfaces however appear to remain relatively close to their stoichiometric composition.

Abernathy, C.R.; Auh, K.H.; Cho, H.; Donovan, S.M.; Han, J.; Lambers, E.S.; Pearton, S.J.; Ren F.; Shul, R.J.

1998-11-12T23:59:59.000Z

448

Comparative study of GaN growth process by MOVPE  

SciTech Connect

A comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. The study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

Sun, J.; Redwing, J.M.; Kuech, T.F.

1999-07-01T23:59:59.000Z

449

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network (OSTI)

We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k center dot p model for hole states, we evaluate the zero-temperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum fluctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of (Ga,Mn)As semiconductors with nominal Mn doping ranging from similar to 2 to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality (Ga,Mn)As materials have nearly parallel ground state alignment.

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

450

Substrate misorientation effects on epitaxial GaInAsSb  

DOE Green Energy (OSTI)

The effect of substrate misorientation on the growth of GaInAsSb was studied for epilayers grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy. The substrates were (100) misoriented 2 or 6{degree} toward (110), (111)A, or (111)B. The surface is mirror-like and featureless for layers grown with a 6{degree} toward (111)B misorientation, while, a slight texture was observed for layers grown on all other misorientations. The optical quality of layers, as determined by the full width at half-maximum of photoluminescence spectra measured at 4K, is significantly better for layers grown on substrates with a 6{degree} toward (111)B misorientation. The incorporation of Zn as a p-type dopant in GaInAsSb is about 1.5 times more efficient on substrates with 6{degree} toward (111)B misorientation compared to 2{degree} toward (110) misorientation. The external quantum efficiency of thermophotovoltaic devices is not, however, significantly affected by substrate misorientation.

Wang, C.A.; Choi, H.K.; Oakley, D.C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1997-12-01T23:59:59.000Z

451

Desferal (DFO) induced Ga-67 washout from normal tissue, tumor and abscess in experimental animals  

Science Conference Proceedings (OSTI)

In the experimental animal, desferal (DFO) given intravenously washes out Ga-67 from all tissues. This effect is not uniform: blood activity is reduced very markedly, while liver activity is less affected. Maximal effect of DFO occurs if given close to the Ga-67 injection. When the time interval between the two is increased, the absolute amount of Ga-67 excreted in the urine in excess of the spontaneous excretion is reduced. Administration of DFO does not effect Ga-67 gastrointestinal excretion. In three animal tumor models (EMT-6 sarcoma in Balb/c mice, spontaneous adenocarcinoma in mice, and spontaneous adenocarcinoma in the rabbit) and in sterile abscess-bearing rats, the administration of DFO 24 hrs after Ga-67-citrate improves significantly the target-to-nontarget ratio. Animals given 50 mg/kg DFO I.V. after Ga-67 citrate showed a significant reduction in the whole-body activity as seen in a one-week follow up.

Oster, Z.H.; Som, P.; Atkins, H.L.; Brill, A.B.

1980-01-01T23:59:59.000Z

452

Low energy electron beam induced vacancy activation in GaN  

Science Conference Proceedings (OSTI)

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5-20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive V{sub Ga}-H{sub n} complexes that can be activated by H removal during low energy electron irradiation.

Nykaenen, H.; Suihkonen, S.; Sopanen, M. [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland); Kilanski, L. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland); Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/56, 02-668 Warsaw (Poland); Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland)

2012-03-19T23:59:59.000Z

453

Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology  

DOE Green Energy (OSTI)

This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

Vernon, S.M. (Spire Corp., Bedford, MA (United States))

1993-04-01T23:59:59.000Z

454

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas  

SciTech Connect

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2 Multiplication-Sign 10{sup 11} cm{sup -2}) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

Mak, W. Y.; Sfigakis, F.; Beere, H. E.; Farrer, I.; Griffiths, J. P.; Jones, G. A. C.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom)] [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Das Gupta, K. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom) [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Klochan, O.; Hamilton, A. R. [School of Physics, University of New South Wales, Sydney (Australia)] [School of Physics, University of New South Wales, Sydney (Australia)

2013-03-11T23:59:59.000Z

455

Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels  

SciTech Connect

This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

2006-01-01T23:59:59.000Z

456

Quaternary Bismide Alloy ByGa1-yAs1-xBix Lattice Matched to GaAs  

DOE Green Energy (OSTI)

We report on the lattice matched quaternary alloy, B{sub y}Ga{sub 1-y}As{sub 1-x}Bi{sub x} grown by molecular beam epitaxy at conditions conducive to bismuth incorporation. Incorporating a smaller atom (boron) along with the larger atom (bismuth) allows for a reduction of the epi-layer strain and lattice matching to GaAs for compositions of Bi:B{approx_equal}1.3:1. The addition of boron flux does not significantly affect the bismuth incorporation and no change in the band gap energy is observed with increasing boron content. However, excess, non-substitutional boron is incorporated which leads to an increase in hole density, as well as an increase in the density of shallow in-gap states as observed by the loss of localization of photo-excited excitons.

Deaton, D. A.; Ptak, A. J.; Alberi, K.; Mascarenhas, A.

2012-07-15T23:59:59.000Z

457

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation dose on dc characteristics and the reliability of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2 1014 cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility and sheet carrier concentration at doses below 2 1013 cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 1014 cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvement of device reliability was attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

Liu, L. [University of Florida, Gainesville; Cuervo, C.V. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

458

Harmonic Responses in 2DEG AlGaAs/GaAs HEMT Devices Due to Plasma Wave Interaction  

Science Conference Proceedings (OSTI)

Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, omega{sub p}, lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short-channel High-Electron-Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.

Hashim, A. M.; Alias, Q. I. [Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Kasai, S.; Hasegawa, H. [Research Center for Integrated Quantum Electronics, Hokkaido University North 12 West 8, Sapporo 060-8628 (Japan)

2010-03-11T23:59:59.000Z

459

Subpicosecond spin relaxation in GaAsSb multiple quantum wells K. C. Hall,a)  

E-Print Network (OSTI)

Subpicosecond spin relaxation in GaAsSb multiple quantum wells K. C. Hall,a) S. W. Leonard, and H quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 m, 100 fs pulses times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation

Van Driel, Henry M.

460

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

Note: This page contains sample records for the topic "ga freeport tx" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN  

DOE Green Energy (OSTI)

Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States); Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); McLane, G.F. [Army Research Lab., Fort Monmouth, NJ (United States); Ren, F. [AT and T Bell Labs., Murray Hill, NJ (United States)

1996-04-01T23:59:59.000Z

462

Reliability of GaN HEMTs: Electrical and Radiation-induced Failure ...  

Science Conference Proceedings (OSTI)

Symposium, Advanced Materials for Power Electronics, Power Conditioning, and Power Conversion II. Presentation Title, Reliability of GaN HEMTs: Electrical...

463

Thermoelectric Study of InGaN-Based Materials for Thermal Energy ...  

Science Conference Proceedings (OSTI)

Presentation Title, Thermoelectric Study of InGaN-Based Materials for Thermal ... Structural and Thermal Stability Properties of Cellulose Nanocomposites with...

464

X-Ray Studies of GaN Film Grown on Si Using Electrochemical Deposition Techniques  

Science Conference Proceedings (OSTI)

This paper reports on the X-ray studies of GaN thin films deposited on Si (111) substrate at different current density using electrochemical deposition technique. The structural properties of GaN films were studied by X-ray diffraction (XRD). XRD analysis showed that hexagonal wurtzite and cubic zinc blende GaN phases were both deposited on Si (111). The lattice constants, the average size of h-GaN crystals and the in-plane (along a-axis) and out of plane (along c-axis) strains were calculated from XRD analysis.

Al-Heuseen, K.; Hashim, M. R. [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia)

2011-03-30T23:59:59.000Z

465

M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers  

Science Conference Proceedings (OSTI)

On-axis reciprocal space mapping of the graded AlGaN showed tilt at each interface associated ..... New Concepts and Materials for Solar Power Conversion

466

Solidification and Microstructure Evaluation of the Ni-Ga and Co-Ni ...  

Science Conference Proceedings (OSTI)

Ni-Ga binary system is thus one of the basic binary system which forms the dominated ? ... The Effects of Natural and Marangoni Convection on the Resultant...

467

Structure and Composition Peculiarities of GaN/AlN Multiple ...  

Science Conference Proceedings (OSTI)

Thickness of AlN and GaN layers in MQWs (multiple quantum wells) were ... InAs Quantum Dots by Ballistic Electron Emission Microscopy and Spectroscopy.

468

A Paleoenvironmental Study of the 2.7 GA Tumbiana Formation, Fortescue Basin, Western Australia.  

E-Print Network (OSTI)

??A paleoecological and paleoenvironmental study was conducted on the 2.7 Ga Meentheena Member of the Tumbiana Formation, Fortescue Basin, Western Australia. It involved the integrated (more)

Coffey, Jessica

2011-01-01T23:59:59.000Z

469

Cu-Ga-Se Thin Films Prepared by a Combination of Electrodeposition and Evaporation Techniques  

Science Conference Proceedings (OSTI)

Cu-Ga-Se thin films were prepared using a combination of electrodeposition and evaporation techniques. A Cu-Se/Mo/glass precursor thin film was first prepared by galvanostatic electrodeposition. On top of this film three different thicknesses of Ga were deposited by evaporation. The Cu-Ga-Se thin films were formed by annealing the Ga/Cu-Se/Mo/glass thin film configuration in a tubular chamber with Se powder, at different temperatures. Thin films were characterized by X-ray diffraction (XRD), photocurrent spectroscopy (PS), inductively coupled plasma (ICP) analysis, and scanning electron microscopy (SEM). The detailed analysis from X-ray reveals that after annealing at 550 C the CuGaSe{sub 2} phase is formed when the thickness of Ga is 0.25 {mu}m, however at 0.5 {mu}m and 1.0 {mu}m Ga the formation of CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} phases is observed respectively. Band gap values were obtained using photocurrent spectroscopy.

Fernandez, A. M.; Turner, J. A.

2012-04-01T23:59:59.000Z

470

A Taxonomic Revision and Phylogenetic Analysis of the Ant Genus Gnamptogenys Roger in Southeast Asia and Australasia (Hymenoptera: Formicidae: Ponerinae)  

E-Print Network (OSTI)

2w 1m ANIC. INDONESIA. Irian Jaya: PT, Freeport Concession,examined. INDONESIA. Irian Jaya: PT, Freeport Concession,

Lattke, John E.

2004-01-01T23:59:59.000Z

471

Electron and hole gas in modulation-doped GaAs/Al{sub 1-x}Ga{sub x}As radial heterojunctions  

Science Conference Proceedings (OSTI)

We perform self-consistent Schroedinger-Poisson calculations with exchange and correlation corrections to determine the electron and hole gas in a radial heterojunction formed in a GaAs/AlGaAs core-multi-shell nanowire, which is either n- or p-doped. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping density/gate potential. Contrary to planar heterojunctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between an isotropic, cylindrical distribution deep in the GaAs core (low doping) and a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface. At low doping, they present an additional localization pattern with six separated 2DEGs strips. The field generated by a back-gate may easily deform the electron or hole gas, breaking the sixfold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.

Bertoni, Andrea; Royo, Miquel; Mahawish, Farah; Goldoni, Guido [CNR-NANO S3, Istituto Nanoscienze, Via Campi 213/a, 41125 Modena (Italy); Department of Physics, University of Modena and Reggio Emilia and CNR-NANO S3, Istituto Nanoscienze, Via Campi 213/a, 41125 Modena (Italy)

2011-11-15T23:59:59.000Z

472

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy  

Science Conference Proceedings (OSTI)

Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Hollaender, B. [Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Forschungszentrum Juelich GmbH, PGI9-IT, 52425 Juelich (Germany); Heuken, M. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany)

2012-11-01T23:59:59.000Z

473

Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the analysis of the potential of GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize three factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the old AM1.5 direct standard spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than {approx}75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-eV three-junction device.

Friedman, D. J.; Kurtz, S. R.; Geisz, J. F.

2002-05-01T23:59:59.000Z

474

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top-Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) a simple device model using the measured direct spectra as an input gives the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. A.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-01-01T23:59:59.000Z

475

The consequences of high injected carrier densities on carrier localisation and efficiency droop in InGaN/GaN quantum well structures  

E-Print Network (OSTI)

in the concentration of the randomly distributed In atoms on the optical properties of InGaN/GaN quantum wells. On the basis of this comparison of theory with experiment we attribute the reduction in the S- shape temperature dependence to the saturation... , the buffer layer was grown in a Thomas Swan 6x2 metalorganic vapour-phase epitaxy reactor using trimethyl gallium (TMG), silane (SiH4) and ammonia (NH3) as precursors, with hydrogen as the carrier gas. The GaN buffer layer was deposited at 1020 C on a...

Hammersley, S; Watson-Parris, D; Dawson, P; Godfrey, M; Badcock, T; Kappers, M; McAleese, C; Oliver, R; Humphreys, C

2012-04-18T23:59:59.000Z

476

InGaAsN Solar Cells with 1.0eV Bandgap, Lattice Matched to GaAs  

DOE Green Energy (OSTI)

The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar Al, with 1.0 ev bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies > 70% arc obwined. Optical studies indicate that defects or impurities, from InGAsN doping and nitrogen incorporation, limit solar cell performance.

Allerman, A.A.; Banas, J.J.; Gee, J.M.; Hammons, B.E.; Jones, E.D.; Kurtz, S.R.

1998-11-24T23:59:59.000Z

477

K8, HVPE Homoepitaxy of p-Type GaN on n-Type Catalyst Free ...  

Science Conference Proceedings (OSTI)

We present the growth of p-type HVPE GaN using catalyst free GaN nitride nanowires as a lattice matched substrate. The nanowires were grown using plasma...

478

Analisi dei processi di ricombinazione in diodi LED basati su GaN: caratterizzazione ottica e misure DLTS.  

E-Print Network (OSTI)

??In questo lavoro vengono analizzati i processi di ricombinazione nei diodi LED basati su GaN/InGaN mediante caratterizzazione ottica dei dispositivi e misure DLTS. In particolare (more)

La Grassa, Marco

2013-01-01T23:59:59.000Z

479

Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density  

Science Conference Proceedings (OSTI)

Molecular-beam epitaxy is used for growing structures differing in doping technique and doping level and having a high two-dimensional-electron concentration n{sub s} in the quantum well. The effect of doping combining uniform and {delta} doping on the electron-transport properties of heterostructures is investigated. A new type of structure with a two-sided silicon {delta} doping of GaAs transition layers located on the quantum-well boundaries is proposed. The largest value of electron mobility {mu}{sub H} = 1520 cm{sup 2}/(V s) is obtained simultaneously with a high electron density n{sub s} = 1.37 Multiplication-Sign 10{sup 13} cm{sup -2} at 300 K with such a doping. It is associated with decreasing electron scattering by an ionized impurity, which is confirmed by the carried out calculations.

Khabibullin, R. A., E-mail: khabibullin_r@mail.ru; Vasil'evskii, I. S. [MEPHI National Research Nuclear University (Russian Federation); Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Ponomarev, D. S. [MEPHI National Research Nuclear University (Russian Federation); Lunin, R. A.; Kulbachinskii, V. A. [Moscow State University (Russian Federation)

2011-10-15T23:59:59.000Z

480

Large energy absorption in Ni-Mn-Ga/polymer composites  

SciTech Connect

Ferromagnetic shape memory alloys can respond to a magnetic field or applied stress by the motion of twin boundaries and hence they show large hysteresis or energy loss. Ni-Mn-Ga particles made by spark erosion have been dispersed and oriented in a polymer matrix to form pseudo 3:1 composites which are studied under applied stress. Loss ratios have been determined from the stress-strain data. The loss ratios of the composites range from 63% to 67% compared to only about 17% for the pure, unfilled polymer samples.

Feuchtwanger, Jorge; Richard, Marc L.; Tang, Yun J.; Berkowitz, Ami E.; O'Handley, Robert C.; Allen, Samuel M. [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); University of California, San Diego, La Joya, California 92093 (United States); Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-05-15T23:59:59.000Z

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481

Method of making V.sub.3 Ga superconductors  

DOE Patents (OSTI)

An improved method for producing a vanadium-gallium superconductor wire having aluminum as a component thereof is disclosed, said wire being encased in a gallium bearing copper sheath. The superconductors disclosed herein may be fabricated under normal atmospheres and room temperatures by forming a tubular shaped billet having a core composed of an alloy of vanadium and aluminum and an outer sheath composed of an alloy of copper, gallium and aluminum. Thereafter the entire billet is swage reduced to form a wire therefrom and heat treated to form a layer of V.sub.3 Ga in the interior of the wire.

Dew-Hughes, David (Bellport, NY)

1980-01-01T23:59:59.000Z

482

Lighting Enhancement of GaN LEDs by Applying p-Type Ni(P):SnO2 ...  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, Materials Science & Technology 2013. Symposium, Multifunctional Oxides. Presentation Title, Lighting Enhancement of GaN LEDs...

483

A3, Depth Resolved Strain and Composition Studies on InGaN and ...  

Science Conference Proceedings (OSTI)

... devices due to its large spontaneous polarization and conduction band offset. ... 620C with fixed beam fluxes of In and Ga under the same nitrogen plasma condition. ... Inexpensive, Non-Toxic Thermoelectric Materials for Waste Heat Recovery ..... Y5, Defect Characterization of InGaN Layer by Deep Level Transient and...

484

Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics  

DOE Green Energy (OSTI)

The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

ERTEN ESER

2012-01-22T23:59:59.000Z

485

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface  

E-Print Network (OSTI)

High efficiency light emitting diode with anisotropically etched GaN- sapphire interface M. H. Lo and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturingGaN micro-light emitting diodes Appl. Phys. Lett. 101, 231110 (2012) A bright cadmium-free, hybrid organic

486

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution  

E-Print Network (OSTI)

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution Aurélien David of photonic crystal PhC -assisted gallium nitride light-emitting diodes LEDs to the existence of unextracted a promising but challenging solution towards efficient solid-state lighting. Conventional GaN-based light-emitting

Recanati, Catherine

487

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurlien David,a  

E-Print Network (OSTI)

GaN light-emitting diodes with Archimedean lattice photonic crystals Au