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Sample records for ga freeport tx

  1. Freeport, TX Exports to India Liquefied Natural Gas (Million...

    U.S. Energy Information Administration (EIA) Indexed Site

    Exports to India Liquefied Natural Gas (Million Cubic Feet) Freeport, TX Exports to India Liquefied Natural Gas (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct ...

  2. Freeport, TX LNG Imports (Price) from Norway (Dollars per Thousand...

    Gasoline and Diesel Fuel Update (EIA)

    Norway (Dollars per Thousand Cubic Feet) Freeport, TX LNG Imports (Price) from Norway (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

  3. Freeport, TX Liquefied Natural Gas Exports to Egypt (Million...

    U.S. Energy Information Administration (EIA) Indexed Site

    Egypt (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2015 2,947 - No Data ...

  4. Price Liquefied Freeport, TX Natural Gas Exports Price to Japan...

    U.S. Energy Information Administration (EIA) Indexed Site

    Japan (Dollars per Thousand Cubic Feet) Price Liquefied Freeport, TX Natural Gas Exports Price to Japan (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4...

  5. Freeport, TX Liquefied Natural Gas Exports to Turkey (Million...

    U.S. Energy Information Administration (EIA) Indexed Site

    Turkey (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to Turkey (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2015 3,145 - No Data ...

  6. Freeport, TX Liquefied Natural Gas Exports to Mexico (Million...

    U.S. Energy Information Administration (EIA) Indexed Site

    Mexico (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 2,725 - No Data ...

  7. Freeport, TX Liquefied Natural Gas Exports (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 2,725 2014 2,664 2015 2,805 2,728 2,947 3,145 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S.

  8. Freeport, TX Liquefied Natural Gas Exports (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2016 2 2 3 1 2 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S.

  9. Freeport, TX Liquefied Natural Gas Exports Price (Dollars per Thousand

    U.S. Energy Information Administration (EIA) Indexed Site

    Cubic Feet) Price (Dollars per Thousand Cubic Feet) Freeport, TX Liquefied Natural Gas Exports Price (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2016 10.00 15.19 10.00 10.00 10.00 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Price of

  10. Freeport, TX Liquefied Natural Gas Exports to Brazil (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Brazil (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to Brazil (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,581 2012 2,601 2,644 2,897 2014 2,664 2015 2,805 2,728 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Freeport, TX Liquefied Natural Gas

  11. Freeport, TX Liquefied Natural Gas Exports to South Korea (Million Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) South Korea (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to South Korea (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,157 3,085 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Freeport, TX Liquefied Natural Gas Exports to South Korea

  12. Freeport, TX Liquefied Natural Gas Imports From Peru (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    From Peru (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Imports From Peru (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,175 3,338 3,262 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Imports from Peru

  13. Freeport, TX Liquefied Natural Gas Imports from Norway (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Norway (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Imports from Norway (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 2,709 2,918 2015 5,992 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Imports from Norway

  14. Freeport, TX Liquefied Natural Gas Imports from Yemen (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Yemen (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Imports from Yemen (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,869 3,108 2012 2,979 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Imports from Yemen

  15. Freeport, TX Natural Gas LNG Imports (Price) From Nigeria (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Freeport, TX Natural Gas LNG Imports (Price) From Nigeria (Dollars per Thousand Cubic Feet) Freeport, TX Natural Gas LNG Imports (Price) From Nigeria (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 6.43 -- -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date:

  16. Freeport, TX Natural Gas Liquefied Natural Gas Imports (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Freeport, TX Natural Gas Liquefied Natural Gas Imports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 2,703 2,994 2015 5,992 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Imports from All Countries

  17. Freeport, TX Natural Gas Liquefied Natural Gas Imports from Egypt (Million

    U.S. Energy Information Administration (EIA) Indexed Site

    Cubic Feet) Egypt (Million Cubic Feet) Freeport, TX Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,969 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Imports from Egypt

  18. Freeport, TX Natural Gas Liquefied Natural Gas Imports from Other Countries

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Other Countries (Million Cubic Feet) Freeport, TX Natural Gas Liquefied Natural Gas Imports from Other Countries (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 2,703 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Freeport, TX LNG Imports

  19. Freeport, TX Natural Gas Liquefied Natural Gas Imports from Trinidad and

    U.S. Energy Information Administration (EIA) Indexed Site

    Tobago (Million Cubic Feet) Trinidad and Tobago (Million Cubic Feet) Freeport, TX Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,706 2012 2,872 2014 2,994 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point

  20. Price Liquefied Freeport, TX Natural Gas Exports Price to United Kingdom

    U.S. Energy Information Administration (EIA) Indexed Site

    (Dollars per Thousand Cubic Feet) United Kingdom (Dollars per Thousand Cubic Feet) Price Liquefied Freeport, TX Natural Gas Exports Price to United Kingdom (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 7.56 -- -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring

  1. Freeport LNG Terminal | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Freeport LNG Terminal Freeport LNG Terminal Freeport LNG Terminal Long-Term Contract Information and Registrations at U.S. LNG Export Facilities Filing Date Type (1) Description ...

  2. Energy Department Authorizes Freeport LNG to Export Liquefied...

    Office of Environmental Management (EM)

    Freeport LNG to Export Liquefied Natural Gas Energy Department Authorizes Freeport LNG to Export Liquefied Natural Gas November 14, 2014 - 2:00pm Addthis News Media Contact ...

  3. Energy Department Authorizes Additional Volume at Proposed Freeport...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export ...

  4. Price Liquefied Freeport, TX Natural Gas Exports to India (Dollars...

    U.S. Energy Information Administration (EIA) Indexed Site

    Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 7.56 8.66 11.10 -- --

  5. Freeport, TX Liquefied Natural Gas Exports to Brazil (Million...

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's 0 0 0 2010's 0 2,581 8,142 0 2,664...

  6. Freeport, TX Liquefied Natural Gas Exports Price (Dollars per Thousand

    U.S. Energy Information Administration (EIA) Indexed Site

    Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2010's 10.31 11.16 13.45 15.51 15.7

  7. Freeport, TX Liquefied Natural Gas Exports Price (Dollars per Thousand

    U.S. Energy Information Administration (EIA) Indexed Site

    Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 13.45 2014 15.51 2015 17.44 12.89 16.71 15.9

  8. EA-380 Freeport Commodities | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Freeport Commodities to export electric energy to Canada. File EA-380 Freepoint CN.docx More Documents & Publications EA-379 FreePoint Commodities EA-196-A Minnesota Power, Sales ...

  9. Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE...

    Broader source: Energy.gov (indexed) [DOE]

    (FLEX I Conditional Order) to Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC, ... holders, together with Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC ...

  10. ORDER NO. 3357: Freeport LNG | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    57: Freeport LNG ORDER NO. 3357: Freeport LNG ORDER CONDITIONALLY GRANTING LONG-TERM MULTI-CONTRACT AUTHORIZATION TO EXPORT LIQUEFIED NATURAL GAS BY VESSEL FROM THE FREEPORT LNG TERMINAL ON QUINTANA ISLAND, TEXAS TO NON-FREE TRADE AGREEMENT NATIONS Based on a review of the complete record and for the reasons set forth below, DOE/FE has concluded that the opponents of the FLEX Application have not demonstrated that the requested authorization will be inconsistent with the public interest and

  11. Freeport LNG Development, L.P. (Freeport LNG)- Blanket Authorization to Export Previously Imported LNG- FE Dkt. No. 15-103-LNG

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Office of Fossil Energy gives notice of receipt of an Application filed June 25, 2015 by Freeport LNG Development, L.P. (Freeport LNG), requesting blanket authorization to export liquefied...

  12. Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefactio...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC and FLNG Liquefaction 3, LLC - 14-005-CIC Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG ...

  13. SEMI-ANNUAL REPORTS - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-161-LNG - ORDER 3282 SEMI-ANNUAL REPORTS - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. ...

  14. SEMI-ANNUAL REPORTS - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION...

    Energy Savers [EERE]

    - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-161-LNG - ORDER 3282 SEMI-ANNUAL REPORTS - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT....

  15. Price of Freeport, TX Natural Gas LNG Imports from Egypt (Nominal...

    U.S. Energy Information Administration (EIA) Indexed Site

    Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- 4.24 2010's -- 12.23 -- -- --

  16. Freeport, TX LNG Imports (Price) from Norway (Dollars per Thousand Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 14.85 14.85 2015

  17. Freeport, TX LNG Imports (Price) from Yemen (Dollars per Thousand Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's -- 10.30 12.00 -- --

  18. Freeport, TX LNG Imports (Price) from Yemen (Dollars per Thousand Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 9.98 10.60 2012 12.00

  19. Freeport, TX Natural Gas LNG Imports (Price) From Peru (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 7.44 7.38 -- -- --

  20. Freeport, TX Natural Gas LNG Imports (Price) From Peru (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 6.92 7.25 7.96

  1. Price of Freeport, TX Liquefied Natural Gas Exports Price to Turkey

    U.S. Energy Information Administration (EIA) Indexed Site

    (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2010's

  2. Price of Freeport, TX Liquefied Natural Gas Exports Price to Turkey

    U.S. Energy Information Administration (EIA) Indexed Site

    (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2015

  3. Price of Freeport, TX Liquefied Natural Gas Exports to Brazil (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's -- 12.74 11.19 -- 15.51 15.1

  4. Price of Freeport, TX Liquefied Natural Gas Exports to Brazil (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 12.74 2012 10.68 10.57 12.21 2014 15.51 2015 17.44 12.8

  5. Price of Freeport, TX Liquefied Natural Gas Exports to Egypt (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2010's

  6. Price of Freeport, TX Liquefied Natural Gas Exports to Egypt (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2015

  7. Price of Freeport, TX Liquefied Natural Gas Exports to Mexico (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2010's -- 13.45 --

  8. Price of Freeport, TX Liquefied Natural Gas Exports to Mexico (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 13.45

  9. Price of Freeport, TX Natural Gas Exports to India (Dollars per Thousand

    U.S. Energy Information Administration (EIA) Indexed Site

    Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 7.82 9.57 2012 11.10

  10. Price of Freeport, TX Natural Gas LNG Imports (Dollars per Thousand Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 13.83 4.51 2010's 6.96 9.27 10.53 14.85 13.88

  11. Price of Freeport, TX Natural Gas LNG Imports (Dollars per Thousand Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 12.95 14.71 2015

  12. Price of Freeport, TX Natural Gas LNG Imports from Egypt (Nominal Dollars

    U.S. Energy Information Administration (EIA) Indexed Site

    per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 12.23

  13. Price of Freeport, TX Natural Gas LNG Imports from Other Countries (Nominal

    U.S. Energy Information Administration (EIA) Indexed Site

    Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2010's --

  14. Price of Freeport, TX Natural Gas LNG Imports from Other Countries (Nominal

    U.S. Energy Information Administration (EIA) Indexed Site

    Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014

  15. Price of Freeport, TX Natural Gas LNG Imports from Trinidad and Tobago

    U.S. Energy Information Administration (EIA) Indexed Site

    (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 13.83 4.77 2010's -- 10.60 9.01 --

  16. Price of Freeport, TX Natural Gas LNG Imports from Trinidad and Tobago

    U.S. Energy Information Administration (EIA) Indexed Site

    (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 10.60 2012 9.01 2014

  17. EIS-0487: Freeport LNG Liquefaction Project, Brazoria County, Texas

    Broader source: Energy.gov [DOE]

    Federal Energy Regulatory Commission (FERC) prepared an EIS to analyze the potential environmental impacts of a proposal to construct and operate the Freeport Liquefied Natural Gas (LNG) Liquefaction Project, which would expand an existing LNG import terminal and associated facilities in Brazoria County, Texas, to enable the terminal to liquefy and export LNG. DOE, Office of Fossil Energy – a cooperating agency in preparing the EIS – has an obligation under Section 3 of the Natural Gas Act to authorize the import and export of natural gas, including LNG, unless it finds that the import or export is not consistent with the public interest.

  18. US WSC TX Site Consumption

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    WSC TX Site Consumption million Btu 0 500 1,000 1,500 2,000 2,500 US WSC TX ... 8,000 12,000 16,000 US WSC TX Site Consumption kilowatthours 0 500 1,000 1,500 ...

  19. Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE Dkt. No.

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    11-161-LNG | Department of Energy Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE Dkt. No. 11-161-LNG Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE Dkt. No. 11-161-LNG On November 15, 2013, the Office of Fossil Energy of the Department of Energy (DOE/FE) issued Order No. 3357 (FLEX II Conditional Order) to Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC, and FLNG Liquefaction 3, LLC (collectively, FLEX) pursuant to section 3(a) of

  20. EIS-0412: TX Energy, LLC, Industrial Gasification Facility Near...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2: TX Energy, LLC, Industrial Gasification Facility Near Beaumont, TX EIS-0412: TX Energy, LLC, Industrial Gasification Facility Near Beaumont, TX February 18, 2009 EIS-0412: ...

  1. SEMI-ANNUAL REPORTS FOR FREEPORT McMoran - FE DKT. NO. 13-26...

    Energy Savers [EERE]

    McMoran - FE DKT. NO. 13-26-LNG - ORDER 3290 SEMI-ANNUAL REPORTS FOR FREEPORT McMoran - FE DKT. NO. 13-26-LNG - ORDER 3290 PDF icon October 2013 PDF icon April 2014 PDF icon ...

  2. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTIO...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-160-LNG - ORDER 2913 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-160-LNG - ...

  3. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTI...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 11-161-LNG - ORDER 3357 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. ...

  4. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTIO...

    Broader source: Energy.gov (indexed) [DOE]

    More Documents & Publications SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NOs. 12-06-LNG, 10-161-LNG and 11-161-LNG (Order Nos. 3066, ...

  5. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTI...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NOs. 12-06-LNG, 10-161-LNG and 11-161-LNG (Order Nos. 3066, 3282 and 3357) SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & ...

  6. Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE...

    Broader source: Energy.gov (indexed) [DOE]

    (FLEX II Conditional Order) to Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, ... Order 3357-B - Final Opinion and Order Granting LNG Export Authorization (704.57 KB) More ...

  7. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTI...

    Energy Savers [EERE]

    EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 11-161-LNG - ORDER 3357 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO....

  8. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTIO...

    Energy Savers [EERE]

    EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 12-06-LNG - ORDER 3066 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 12-06-LNG -...

  9. D&TX

    Office of Legacy Management (LM)

    *. ( ARGONNE RATIONAL 1-Ci3ORATORY . 1 D&TX 7. my 19, 1349 70 t. Z. ROse at L, Em &=i*p~~4 DVur;uM hLl%L ?bvs -Lcs . FReti c. c. Fqpr an2 2. E. sulu+rr fis2 S*crep t & fbQ s-e: of the ?atagel DrFAm%un !! 1 0 * the >rt &Fz=z d t& &men of ScieJce & >&7*-z 4-q 2s'; %rZion 0C the ZLLS~~~ of Science a2 31~52-37 fo2 T&imcyyg c.=A+=< he-< - ,,a uas c:cgetes ALL 12, 1SL9. Z 0 sor;~~,-~-lioi! c.jme s 'm&-go& ~WC& c ",& d*cg&A

  10. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION,

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    LLC - FE DKT. NO. 12-06-LNG - ORDER 3066 | Department of Energy EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 12-06-LNG - ORDER 3066 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 12-06-LNG - ORDER 3066 April 2013 (1.3 MB) April 2014 (229.51 KB) October 2014 (46.03 KB) April 2015 (2.19 MB) October 2015 (2.31 MB) More Documents & Publications SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE

  11. Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefactio...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ...P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC and FLNG Liquefaction 3, LLC - 14-005-CIC; 10-160-LNG; 10-161-LNG, 11-161-LNG and 12-06-LNG Freeport LNG Expansion, L.P., FLNG ...

  12. Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas

    Broader source: Energy.gov [DOE]

    The Department of Energy announced the conditional authorization for Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC to export liquefied natural gas to countries that do not have a Free Trade Agreement with the U.S. This is the fifth conditional authorization the Department has announced.

  13. Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC- FE Dkt. No. 10-161-LNG

    Office of Energy Efficiency and Renewable Energy (EERE)

    On May 17, 2013, the Office of Fossil Energy of the Department of Energy (DOE/FE) issued Order No. 3282 (FLEX I Conditional Order) to Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC,...

  14. CleanTX Foundation | Open Energy Information

    Open Energy Info (EERE)

    is a stub. You can help OpenEI by expanding it. CleanTX Foundation is a policy organization located in Austin, Texas. References About CleanTX Foundation Retrieved from...

  15. EIS-0412: TX Energy, LLC, Industrial Gasification Facility Near Beaumont,

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    TX | Department of Energy 2: TX Energy, LLC, Industrial Gasification Facility Near Beaumont, TX EIS-0412: TX Energy, LLC, Industrial Gasification Facility Near Beaumont, TX February 18, 2009 EIS-0412: Notice of Intent to Prepare an Environmental Impact Statement Construction of the TX Energy, LLC, Industrial Gasification Facility near Beaumont, Texas

  16. EDF Industrial Power Services (TX), LLC | Open Energy Information

    Open Energy Info (EERE)

    EDF Industrial Power Services (TX), LLC Jump to: navigation, search Name: EDF Industrial Power Services (TX), LLC Place: Texas Phone Number: 877-432-4530 Website:...

  17. Penitas, TX Natural Gas Pipeline Imports From Mexico (Dollars...

    U.S. Energy Information Administration (EIA) Indexed Site

    Penitas, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Penitas, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade ...

  18. Alamo, TX Natural Gas Pipeline Imports From Mexico (Dollars per...

    U.S. Energy Information Administration (EIA) Indexed Site

    Alamo, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Alamo, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade ...

  19. TX-100 manufacturing final project report.

    SciTech Connect (OSTI)

    Ashwill, Thomas D.; Berry, Derek S.

    2007-11-01

    This report details the work completed under the TX-100 blade manufacturing portion of the Carbon-Hybrid Blade Developments: Standard and Twist-Coupled Prototype project. The TX-100 blade is a 9 meter prototype blade designed with bend-twist coupling to augment the mitigation of peak loads during normal turbine operation. This structural coupling was achieved by locating off axis carbon fiber in the outboard portion of the blade skins. The report will present the tooling selection, blade production, blade instrumentation, blade shipping and adapter plate design and fabrication. The baseline blade used for this project was the ERS-100 (Revision D) wind turbine blade. The molds used for the production of the TX-100 were originally built for the production of the CX-100 blade. The same high pressure and low pressure skin molds were used to manufacture the TX-100 skins. In order to compensate for the difference in skin thickness between the CX-100 and the TX-100, however, a new TX-100 shear web plug and mold were required. Both the blade assembly fixture and the root stud insertion fixture used for the CX-100 blades could be utilized for the TX-100 blades. A production run of seven TX-100 prototype blades was undertaken at TPI Composites during the month of October, 2004. Of those seven blades, four were instrumented with strain gauges before final assembly. After production at the TPI Composites facility in Rhode Island, the blades were shipped to various test sites: two blades to the National Wind Technology Center at the National Renewable Energy Laboratory in Boulder, Colorado, two blades to Sandia National Laboratory in Albuquerque, New Mexico and three blades to the United States Department of Agriculture turbine field test facility in Bushland, Texas. An adapter plate was designed to allow the TX-100 blades to be installed on existing Micon 65/13M turbines at the USDA site. The conclusion of this program is the kick-off of the TX-100 blade testing at the three

  20. SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION,

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    LLC - FE DKT. NOs. 12-06-LNG, 10-161-LNG and 11-161-LNG (Order Nos. 3066, 3282 and 3357) | Department of Energy EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NOs. 12-06-LNG, 10-161-LNG and 11-161-LNG (Order Nos. 3066, 3282 and 3357) SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NOs. 12-06-LNG, 10-161-LNG and 11-161-LNG (Order Nos. 3066, 3282 and 3357) April 2014 (229.51 KB) October 2014 (46.03 KB) April 2015 (2.19 MB) October 2015 (2.31

  1. Roma, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...

    U.S. Energy Information Administration (EIA) Indexed Site

    Roma, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Roma, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep ...

  2. Passive seismic tomography application for cave monitoring in DOZ underground mine PT. Freeport Indonesia

    SciTech Connect (OSTI)

    Nurhandoko, Bagus Endar B.; Wely, Woen; Setiadi, Herlan; Riyanto, Erwin

    2015-04-16

    It is already known that tomography has a great impact for analyzing and mapping unknown objects based on inversion, travel time as well as waveform inversion. Therefore, tomography has used in wide area, not only in medical but also in petroleum as well as mining. Recently, tomography method is being applied in several mining industries. A case study of tomography imaging has been carried out in DOZ ( Deep Ore Zone ) block caving mine, Tembagapura, Papua. Many researchers are undergoing to investigate the properties of DOZ cave not only outside but also inside which is unknown. Tomography takes a part for determining this objective.The sources are natural from the seismic events that caused by mining induced seismicity and rocks deformation activity, therefore it is called as passive seismic. These microseismic travel time data are processed by Simultaneous Iterative Reconstruction Technique (SIRT). The result of the inversion can be used for DOZ cave monitoring. These information must be used for identifying weak zone inside the cave. In addition, these results of tomography can be used to determine DOZ and cave information to support mine activity in PT. Freeport Indonesia.

  3. DOE - Office of Legacy Management -- Sutton Steele and Steele Co - TX 09

    Office of Legacy Management (LM)

    Sutton Steele and Steele Co - TX 09 FUSRAP Considered Sites Site: SUTTON, STEELE & STEELE CO. (TX.09) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: Sutton, Steele & Steele, Inc. TX.09-1 Location: Dallas , Texas TX.09-1 Evaluation Year: 1993 TX.09-2 Site Operations: Conducted operations to separate Uranium shot by means of air float tables and conducted research to air classify C-Liner and C-Special materials. TX.09-1 TX.09-3 TX.09-4 TX.09-5

  4. RAPID/Roadmap/15-TX-a | Open Energy Information

    Open Energy Info (EERE)

    BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Air Quality Permit - Permit to Construct (15-TX-a) This flowchart illustrates the general...

  5. RAPID/Roadmap/11-TX-c | Open Energy Information

    Open Energy Info (EERE)

    11-TX-c.2 - Does the Project Area Contain a Recorded Archaeological Site? However, oil, gas, or other mineral exploration, production, processing, marketing, refining, or...

  6. RAPID/Roadmap/3-TX-i | Open Energy Information

    Open Energy Info (EERE)

    construction plans on the leased asset; Permission for the representatives of TxDOT to enter the area for inspection, maintenance, or reconstruction of highway facilities as...

  7. ,"Alamo, TX Natural Gas Pipeline Imports From Mexico (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Alamo, TX Natural Gas Pipeline Imports From Mexico (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data...

  8. RAPID/Roadmap/6-TX-b | Open Energy Information

    Open Energy Info (EERE)

    Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Construction Storm Water Permit (6-TX-b) The Texas...

  9. RAPID/Roadmap/11-TX-a | Open Energy Information

    Open Energy Info (EERE)

    thumbnail: Page number not in range. Flowchart Narrative 11-TX-a.1 - Have Potential Human Remains Been Discovered? If the developer discovers potential human remains during any...

  10. RAPID/Roadmap/19-TX-a | Open Energy Information

    Open Energy Info (EERE)

    Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Water Access and Water Rights Overview (19-TX-a) In the late 1960's Texas...

  11. RAPID/Roadmap/14-TX-d | Open Energy Information

    Open Energy Info (EERE)

    Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us 401 Water Quality Certification (14-TX-d) Section 401 of the Clean Water Act (CWA)...

  12. RAPID/Roadmap/11-TX-b | Open Energy Information

    Open Energy Info (EERE)

    Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Human Remains Process (11-TX-b) This flowchart illustrates the procedure a...

  13. RAPID/Roadmap/6-TX-a | Open Energy Information

    Open Energy Info (EERE)

    must obtain the proper oversizeoverweight permit from the Texas Department of Motor Vehicles (TxDMV). 06TXAExtraLegalVehiclePermittingProcess.pdf Error creating...

  14. Strategic Petroleum Reserve | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Crude oil pipes at SPR Bryan Mound site near Freeport, TX. Crude oil pipes at SPR Bryan Mound site near Freeport, TX. The Strategic Petroleum Reserve (SPR) is the world's largest...

  15. U.S. Natural Gas Exports to Mexico

    Gasoline and Diesel Fuel Update (EIA)

    MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port...

  16. U.S. LNG Imports from Canada

    Gasoline and Diesel Fuel Update (EIA)

    MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Freeport, TX Kenai, AK Port...

  17. Hanford Single Shell Tank Leak Causes and Locations - 241-TX Farm

    SciTech Connect (OSTI)

    Girardot, C. L.; Harlow, D> G.

    2014-07-22

    This document identifies 241-TX Tank Farm (TX Farm) leak causes and locations for the 100 series leaking tanks (241-TX-107 and 241-TX-114) identified in RPP-RPT-50870, Rev. 0, Hanford 241-TX Farm Leak Inventory Assessment Report. This document satisfies the TX Farm portion of the target (T04) in the Hanford Federal Facility Agreement and Consent Order milestone M-045-91F.

  18. Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC and FLNG Liquefaction 3, LLC- 14-005-CIC; 10-160-LNG; 10-161-LNG, 11-161-LNG and 12-06-LNG

    Office of Energy Efficiency and Renewable Energy (EERE)

    Application of Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC and FLNG Liquefaction 3, LLC to Transfer Control of Long-term Authorization to Export LNG to Free Trade...

  19. DOE - Office of Legacy Management -- Texas City Chemicals Co Inc - TX 02

    Office of Legacy Management (LM)

    Texas City Chemicals Co Inc - TX 02 FUSRAP Considered Sites Site: TEXAS CITY CHEMICALS CO., INC. (TX.02 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Texas City , Texas TX.02-1 Evaluation Year: 1985 TX.02-2 Site Operations: Process development studies and pilot plant testing of uranium recovery from phosphoric acid during the mid-1950s TX.02-3 TX.02-4 Site Disposition: Eliminated - No Authority TX.02-4 Radioactive Materials Handled:

  20. El Paso, TX Natural Gas Pipeline Imports From Mexico (Million...

    U.S. Energy Information Administration (EIA) Indexed Site

    Million Cubic Feet) El Paso, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's ...

  1. El Paso, TX Natural Gas Pipeline Imports From Mexico (Dollars...

    U.S. Energy Information Administration (EIA) Indexed Site

    Dollars per Thousand Cubic Feet) El Paso, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 ...

  2. RAPID/Roadmap/19-TX-e | Open Energy Information

    Open Energy Info (EERE)

    will not interfere with other water rights. 19-TX-e Temporary Surface Water Permit.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number...

  3. RAPID/Roadmap/3-TX-e | Open Energy Information

    Open Energy Info (EERE)

    the leasing process. 03-TX-e - Lease of Texas Parks & Wildlife Department Land (1).pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number...

  4. RAPID/Roadmap/19-TX-b | Open Energy Information

    Open Energy Info (EERE)

    19-TX-b.6 - Does the Developer Own the Overlying Land? In Texas, the right to acquire and pump ground water is tied to the ownership of the land overlying the groundwater aquifer....

  5. RAPID/Roadmap/12-TX-a | Open Energy Information

    Open Energy Info (EERE)

    Contribute Contact Us State Biological Resource Considerations (12-TX-a) In Texas, no person may capture, trap, take, or kill, or attempt to capture, trap, take, or kill,...

  6. TxDOT Access Management Manual | Open Energy Information

    Open Energy Info (EERE)

    Access Management Manual Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- OtherOther: TxDOT Access Management ManualLegal Abstract Manual prepared...

  7. Penitas, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...

    U.S. Energy Information Administration (EIA) Indexed Site

    Million Cubic Feet) Penitas, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 252 1,324 824 1,017 871 770 ...

  8. Galvan Ranch, TX Natural Gas Pipeline Imports From Mexico (Million...

    U.S. Energy Information Administration (EIA) Indexed Site

    Million Cubic Feet) Galvan Ranch, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 12 40 77 59 55 47 43 41 ...

  9. Laredo, TX Liquefied Natural Gas Exports to Mexico (Million Cubic...

    U.S. Energy Information Administration (EIA) Indexed Site

    Million Cubic Feet) Laredo, TX Liquefied Natural Gas Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2015 0.512 0.497 2016 2.732 - No ...

  10. DOE - Office of Legacy Management -- Pantex Sewage Reservoir - TX 03

    Office of Legacy Management (LM)

    Pantex Sewage Reservoir - TX 03 FUSRAP Considered Sites Site: Pantex Sewage Reservoir (TX.03 ) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: This site is one of a group of 77 FUSRAP considered sites for which few, if any records are available in their respective site files to provide an historical account of past operations and their

  11. File:03-TX-g - Lease of Relinquishment Act Lands.pdf | Open Energy...

    Open Energy Info (EERE)

    TX-g - Lease of Relinquishment Act Lands.pdf Jump to: navigation, search File File history File usage Metadata File:03-TX-g - Lease of Relinquishment Act Lands.pdf Size of this...

  12. Price of San Elizario, TX Natural Gas Pipeline Exports to Mexico...

    Gasoline and Diesel Fuel Update (EIA)

    Price of San Elizario, TX Natural Gas Pipeline Exports to Mexico (Dollars per Thousand Cubic Feet) Price of San Elizario, TX Natural Gas Pipeline Exports to Mexico (Dollars per...

  13. McAllen, TX Natural Gas Pipeline Imports From Mexico (Dollars...

    U.S. Energy Information Administration (EIA) Indexed Site

    McAllen, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) McAllen, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade ...

  14. File:03-TX-f - Lease of Land Trade Lands.pdf | Open Energy Information

    Open Energy Info (EERE)

    TX-f - Lease of Land Trade Lands.pdf Jump to: navigation, search File File history File usage Metadata File:03-TX-f - Lease of Land Trade Lands.pdf Size of this preview: 463 599...

  15. File:03-TX-e - Lease of Texas Parks & Wildlife Department Land...

    Open Energy Info (EERE)

    3-TX-e - Lease of Texas Parks & Wildlife Department Land (1).pdf Jump to: navigation, search File File history File usage Metadata File:03-TX-e - Lease of Texas Parks & Wildlife...

  16. ARM - Field Campaign - TX-2002 AIRS Validation Campaign

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govCampaignsTX-2002 AIRS Validation Campaign Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : TX-2002 AIRS Validation Campaign 2002.11.18 - 2002.12.13 Lead Scientist : Robert Knuteson Abstract NASA is conducting an aircraft campaign for the validation of the AIRS and MODIS instruments on the EOS Aqua platform. The NASA high altitude ER-2 aircraft will be based in San Antonio, Texas. The ARM SGP central facility is one of the ground

  17. Clint, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...

    U.S. Energy Information Administration (EIA) Indexed Site

    Million Cubic Feet) Clint, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 8,088 6,402 7,296 6,783 8,836 ...

  18. Rotary mode core sampling approved checklist: 241-TX-113

    SciTech Connect (OSTI)

    Fowler, K.D.

    1998-08-03

    The safety assessment for rotary mode core sampling was developed using certain bounding assumptions, however, those assumptions were not verified for each of the existing or potential flammable gas tanks. Therefore, a Flammable Gas/Rotary Mode Core Sampling Approved Checklist has been completed for tank 241-TX-113 prior to sampling operations. This transmittal documents the dispositions of the checklist items from the safety assessment.

  19. Rotary mode core sampling approved checklist: 241-TX-116

    SciTech Connect (OSTI)

    FOWLER, K.D.

    1999-02-24

    The safety assessment for rotary mode core sampling was developed using certain bounding assumptions, however, those assumptions were not verified for each of the existing or potential flammable gas tanks. Therefore, a Flammable Gas/Rotary Mode Core Sampling Approved Checklist has been completed for tank 241-TX-116 prior to sampling operations. This transmittal documents the dispositions of the checklist items from the safety assessment.

  20. Albany, OR * Fairbanks, AK * Morgantown, WV * Pittsburgh, PA * Sugarland, TX

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sugarland, TX Website: www.netl.doe.gov Customer Service: 1-800-553-7681 Enhanced Oil Recovery Program The mission of the Enhanced Oil Recovery Program is to provide information and technologies that will assure sustainable, reliable, affordable, and environmentally sound supplies of domestic oil resources. The Strategic Center for Natural Gas and Oil (SCNGO) seeks to accomplish this critical mission by advancing environmentally responsible technological solutions that enhance recovery of oil

  1. Microsoft Word - TX-100 Final Report - SAND2007-6066.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Manager: Tom Ashwill Abstract This report details the work completed under the TX-100 blade manufacturing portion of the Carbon-Hybrid Blade Developments: Standard and...

  2. CX-100 and TX-100 blade field tests.

    SciTech Connect (OSTI)

    Holman, Adam (USDA-Agriculture Research Service, Bushland, TX); Jones, Perry L.; Zayas, Jose R.

    2005-12-01

    In support of the DOE Low Wind Speed Turbine (LWST) program two of the three Micon 65/13M wind turbines at the USDA Agricultural Research Service (ARS) center in Bushland, Texas will be used to test two sets of experimental blades, the CX-100 and TX-100. The blade aerodynamic and structural characterization, meteorological inflow and wind turbine structural response will be monitored with an array of 75 instruments: 33 to characterize the blades, 15 to characterize the inflow, and 27 to characterize the time-varying state of the turbine. For both tests, data will be sampled at a rate of 30 Hz using the ATLAS II (Accurate GPS Time-Linked Data Acquisition System) data acquisition system. The system features a time-synchronized continuous data stream and telemetered data from the turbine rotor. This paper documents the instruments and infrastructure that have been developed to monitor these blades, turbines and inflow.

  3. DOE Zero Energy Ready Home Case Study: Green Extreme Homes & Carl Franklin Homes, Garland, TX

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready affordable home in Garland, TX, that was the first retrofit home certified to the DOE Zero Energy Ready home requirements. The construction team achieved a...

  4. File:USDA-CE-Production-GIFmaps-TX.pdf | Open Energy Information

    Open Energy Info (EERE)

    TX.pdf Jump to: navigation, search File File history File usage Texas Ethanol Plant Locations Size of this preview: 776 600 pixels. Full resolution (1,650 1,275 pixels,...

  5. TxDOT - Right of Way Forms webpage | Open Energy Information

    Open Energy Info (EERE)

    Right of Way Forms webpage Jump to: navigation, search OpenEI Reference LibraryAdd to library Web Site: TxDOT - Right of Way Forms webpage Abstract This webpage provides the...

  6. Texas A&M University College Station, TX 77843-3366

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MS 3366 Texas A&M University College Station, TX 77843-3366 Ph: 979-845-1411 Fax: 979-458-3213 Beam Time Request Form In order to be scheduled you must fill in and return this ...

  7. DOE - Office of Legacy Management -- Falls City Mill Site - TX 04

    Office of Legacy Management (LM)

    Mill Site - TX 04 FUSRAP Considered Sites Site: Falls City Mill Site (TX.04 ) Licensed to DOE for long-term custody and managed by the Office of Legacy Management. Designated Name: Falls City, Texas, Disposal Site Alternate Name: Falls City Mill Site Uranium Mill in Falls City Location: Karnes County, Texas Evaluation Year: Site Operations: Site Disposition: Uranium Mill Tailings Radiation Control Act (UMTRCA) Title I site Radioactive Materials Handled: Primary Radioactive Materials Handled:

  8. DOE - Office of Legacy Management -- Falls City Uranium Ore Stockpile - TX

    Office of Legacy Management (LM)

    04A Falls City Uranium Ore Stockpile - TX 04A FUSRAP Considered Sites Site: Falls City Uranium Ore Stockpile (TX.04A ) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: The history of domestic uranium procurement under U.S. Atomic Energy Commission (AEC) contracts identifies a number of ore buying stations (sampling and storage sites) that

  9. ORNL measurements at Hanford Waste Tank TX-118

    SciTech Connect (OSTI)

    Koehler, P.E.; Mihalczo, J.T.

    1995-02-01

    A program of measurements and calculations to develop a method of measuring the fissionable material content of the large waste storage tanks at the Hanford, Washington, site is described in this report. These tanks contain radioactive waste from the processing of irradiated fuel elements from the plutonium-producing nuclear reactors at the Hanford site. Time correlation and noise analysis techniques, similar to those developed for and used in the Nuclear Weapons Identification System at the Y-12 Plant in Oak Ridge, Tennessee, will be used at the Hanford site. Both ``passive`` techniques to detect the neutrons emitted spontaneously from the waste in the tank and ``active`` techniques using AmBe and {sup 252}Cf neutron sources to induce fissions will be used. This work is divided into three major tasks: (1) development of high-sensitivity neutron detectors that can selectively count only neutrons in the high {gamma} radiation fields in the tanks, (2) Monte Carlo neutron transport calculations using both the KENO and MCNP codes to plan and analyze the measurements, and (3) the measurement of time-correlated neutrons by time and frequency analysis to distinguish spontaneous fission from sources inside the tanks. This report describes the development of the detector and its testing in radiation fields at the Radiation Calibration Facility at Oak Ridge National Laboratory and in tank TX-118 at the 200 W area at Westinghouse Hanford Company.

  10. RCRA Assessment Plan for Single-Shell Tank Waste Management Area TX-TY

    SciTech Connect (OSTI)

    Horton, Duane G.

    2007-03-26

    WMA TX-TY contains underground, single-shell tanks that were used to store liquid waste that contained chemicals and radionuclides. Most of the liquid has been removed, and the remaining waste is regulated under the RCRA as modified in 40 CFR Part 265, Subpart F and Washington States Hazardous Waste Management Act . WMA TX-TY was placed in assessment monitoring in 1993 because of elevated specific conductance. A groundwater quality assessment plan was written in 1993 describing the monitoring activities to be used in deciding whether WMA TX-TY had affected groundwater. That plan was updated in 2001 for continued RCRA groundwater quality assessment as required by 40 CFR 265.93 (d)(7). This document further updates the assessment plan for WMA TX-TY by including (1) information obtained from ten new wells installed at the WMA after 1999 and (2) information from routine quarterly groundwater monitoring during the last five years. Also, this plan describes activities for continuing the groundwater assessment at WMA TX TY.

  11. Hanford Tank Farms Vadose Zone, Addendum to the TX Tank Farm Report

    SciTech Connect (OSTI)

    Spatz, R.

    2000-08-01

    This addendum to the TX Tank Farm Report (GJO-97-13-TAR, GJO-HAN-11) published in September 1997 incorporates the results of high-rate and repeat logging activities along with shape factor analysis of the logging data. A high-rate logging system was developed and deployed in the TX Tank Farm to measure cesium-137 concentration levels in high gamma flux zones where the spectral gamma logging system was unable to collect usable data because of high dead times and detector saturation. This report presents additional data and revised visualizations of subsurface contaminant distribution in the TX Tank Farm at the DOE Hanford Site in the state of Washington.

  12. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars

    U.S. Energy Information Administration (EIA) Indexed Site

    per Thousand Cubic Feet) Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars per Thousand Cubic Feet) Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 7.90 5.36 -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016

  13. DOE Zero Energy Ready Home Case Study: Sterling Brook Custom Homes, Double Oak, TX

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready home in Double Oak, TX, north of Dallas, that scored a HERS 44 without PV. The 3,752-ft2 two-story home served as an energy-efficient model home for the custom...

  14. McAllen, TX Natural Gas Pipeline Exports to Mexico (Million Cubic...

    U.S. Energy Information Administration (EIA) Indexed Site

    Million Cubic Feet) McAllen, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 4,414 4,236 5,595 6,174 4,938 ...

  15. DOE Zero Energy Ready Home Case Study: M Street Homes, Houston, TX

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready home in Houston, TX, that achieves a HERS 45 without PV or HERS 32 with 1.2 kW PV. The three-story, 4,507-ft2 custom home is powered by a unique tri-generation...

  16. Penitas, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Million Cubic Feet) Penitas, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 253 40 NA 2000's NA NA NA - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S.

  17. Roma, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Roma, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2016 1 2 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S.

  18. Albany, OR * Anchorage, AK * Morgantown, WV * Pittsburgh, PA * Sugar Land, TX

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Training Center CONTACTS Traci Rodosta Carbon Storage Technology Manager National Energy Technology Laboratory 3610 Collins Ferry Road PO Box 880 Morgantown, WV 26507 304-285-1345 traci.rodosta@netl.doe.gov Andrea Dunn Project Manager National Energy Technology Laboratory 626 Cochrans Mill Road P.O. Box 10940 Pittsburgh, PA 15236 412-386-7594 andrea.dunn@netl.doe.gov Hilary Olson Project Director/Principal Investigator University of Texas at Austin 1 University Station, C0300 Austin, TX

  19. McAllen, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Million Cubic Feet) McAllen, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's NA NA 2000's 1,118 NA 402 0 0 5,322 7,902 26,605 20,115 12,535 2010's 2,520 0 0 0 0 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S.

  20. Alamo, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Million Cubic Feet) Alamo, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's NA 12,651 2000's 8,390 2,984 571 0 0 2,656 3,880 22,197 20,653 13,279 2010's 4,685 0 0 0 0 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S.

  1. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports from Qatar

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) from Qatar (Million Cubic Feet) Golden Pass, TX Natural Gas Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,902 4,896 4,100 18,487 4,900 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S.

  2. Hidalgo, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Million Cubic Feet) Hidalgo, TX Natural Gas Pipeline Imports From Mexico (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 13,609 17,243 13,496 41,879 2000's 2,093 7,292 782 0 0 1,342 967 5,259 1,201 284 2010's 62 0 0 0 0 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S.

  3. Roma, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand

    U.S. Energy Information Administration (EIA) Indexed Site

    Cubic Feet) Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Roma, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2016 2.06 2.61 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016 Referring Pages: U.S. Price of

  4. DOE Zero Energy Ready Home Case Study 2014: Durable Energy Builders, Houston, TX

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Durable Energy Builders Houston, TX DOE ZERO ENERGY READY HOME(tm) CASE STUDY The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed

  5. Office of Fossil Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Company ConocoPhillips Company Koch Supply & Trading, LP 13-97-LNG Brazil Excalibur Freeport, TX 2,727,940 12.19 S TOTAL Re-Exports of LNG 5,532,898 S - Represents ...

  6. U.S. LNG Imports from Canada

    Gasoline and Diesel Fuel Update (EIA)

    MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA...

  7. U.S. Natural Gas Exports to Mexico

    Gasoline and Diesel Fuel Update (EIA)

    MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to India Freeport, TX Sabine Pass, LA Total to Japan Cameron, LA Kenai, AK Sabine Pass, LA...

  8. Strategic Petroleum Reserve | Department of Energy

    Energy Savers [EERE]

    Strategic Petroleum Reserve Strategic Petroleum Reserve Crude oil pipes at the Bryan Mound site, the largest of the four SPR storage sites - near Freeport, TX. Crude oil pipes at ...

  9. U.S. Natural Gas Exports to Canada

    Gasoline and Diesel Fuel Update (EIA)

    Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to Egypt ... LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total ...

  10. U.S. Natural Gas Exports to Mexico

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to Egypt ... LA Total to Russia Kenai, AK Total to South Korea Freeport, TX Sabine Pass, LA Total ...

  11. U.S. Total Exports

    Gasoline and Diesel Fuel Update (EIA)

    Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to Egypt ... Sabine Pass, LA Total to Russia Total to South Korea Freeport, TX Sabine Pass, LA Total ...

  12. Cost-effectiveness analysis of TxDOT LPG fleet conversion. Volume 1. Interim research report

    SciTech Connect (OSTI)

    Euritt, M.A.; Taylor, D.B.; Mahmassani, H.

    1992-10-01

    Increased emphasis on energy efficiency and air quality has resulted in a number of state and federal initiatives examining the use of alternative fuels for motor vehicles. Texas' program for alternate fuels includes liquefied petroleum gas (LPG). Based on an analysis of 30-year life-cycle costs, development of a propane vehicle program for the Texas Department of Transportation (TxDOT) would cost about $24.3 million (in 1991 dollars). These costs include savings from lower-priced LPG and differentials between propane and gasoline/diesel in infrastructure costs for a fueling station, vehicle costs, and operating costs. The 30-year life-cycle costs translate into an average annual vehicle cost increase of $308, or about 2.5 cents more per vehicle mile of travel. Sensitivity analyses are performed on the discount rate, price of propane, maintenance savings, vehicle utilization, diesel vehicles, extended vehicle life, original equipment manufacturer (OEM) vehicles, and operating and infrastructure costs. The best results are obtained when not converting diesel vehicles, converting only large fleets, and extending the period the vehicle is kept in service. Combining these factors yields results that are most cost-effective for TxDOT. This is volume one of two volumes.

  13. Cost-effectiveness analysis of TxDOT LPG fleet conversion. Volume 2. Interim research report

    SciTech Connect (OSTI)

    Euritt, M.A.; Taylor, D.B.; Mahmassani, H.

    1992-11-01

    Increased emphasis on energy efficiency and air quality has resulted in a number of state and federal initiatives examining the use of alternative fuels for motor vehicles. Texas' program for alternate fuels includes liquefied petroleum gas (LPG), commonly called propane. Based on an analysis of 30-year life-cycle costs, development of a propane vehicle program for the Texas Department of Transportation (TxDOT) would cost about $24.3 million (in 1991 dollars). These costs include savings from lower-priced propane and differentials between propane and gasoline/diesel in infrastructure costs, vehicle costs, and operating costs. The 30-year life-cycle costs translate into an average annual vehicle cost increase of $308, or about 2.5 cents more per vehicle mile of travel. Based on the cost-effectiveness analysis and assumptions, there are currently no TxDOT locations that can be converted to propane without additional financial outlays. This is volume two of two volumes.

  14. Strategic Plan

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reserves » Strategic Petroleum Reserve Strategic Petroleum Reserve Crude oil pipes at the Bryan Mound site, the largest of the four SPR storage sites - near Freeport, TX. Crude oil pipes at the Bryan Mound site, the largest of the four SPR storage sites - near Freeport, TX. The Strategic Petroleum Reserve (SPR) is the world's largest supply of emergency crude oil. The federally-owned oil stocks are stored in huge underground salt caverns along the coastline of the Gulf of Mexico. Decisions to

  15. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  16. Office of Fossil Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    91 Email: ngreports@hq.doe.gov 2016 Jan Feb March April May June July Aug Sept Oct Nov Dec TOTAL Egypt - - - - - 0.0 Nigeria - - - - - 0.0 Norway - - - - - 0.0 Qatar - - - - - 0.0 Trinidad 12.0 9.6 8.5 4.7 5.1 39.8 Yemen - - - - - 0.0 TOTAL 12.0 9.6 8.5 4.7 5.1 39.8 2016 Jan Feb March April May June July Aug Sept Oct Nov Dec TOTAL Cameron, LA - - - - - 0.0 Cove Point, MD - - - - - 0.0 Elba Island, GA - - 2.9 - - 2.9 Everett, MA 10.6 8.6 5.6 4.7 5.1 34.6 Freeport, TX - - - - - 0.0 Golden Pass, TX

  17. EIS-0412: Federal Loan Guarantee to Support Construction of the TX Energy LLC, Industrial Gasification Facility near Beaumont, Texas

    Broader source: Energy.gov [DOE]

    The Department of Energy is assessing the potential environmental impacts for its proposed action of issuing a Federal loan guarantee to TX Energy, LLC (TXE). TXE submitted an application to DOE under the Federal loan guarantee program pursuant to the Energy Policy Act of 2005 (EPAct 2005) to support construction of the TXE industrial Gasification Facility near Beaumont, Texas.

  18. RCRA Assessment Plan for Single-Shell Tank Waste Management Area TX-TY at the Hanford Site

    SciTech Connect (OSTI)

    Hodges, Floyd N.; Chou, Charissa J.

    2001-02-23

    A groundwater quality assessment plan was prepared to investigate the rate and extent of aquifer contamination beneath Waste Management Area TX-TY on the Hanford Site in Washington State. This plan is an update of a draft plan issued in February 1999, which guided work performed in fiscal year 2000.

  19. Hidalgo, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand

    U.S. Energy Information Administration (EIA) Indexed Site

    Cubic Feet) Dollars per Thousand Cubic Feet) Hidalgo, TX Natural Gas Pipeline Imports From Mexico (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 2.26 2.31 2.03 2.09 2000's 5.85 4.61 2.26 -- -- 8.10 5.53 6.23 5.55 4.40 2010's 4.21 -- -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 08/31/2016 Next Release Date: 09/30/2016

  20. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  1. Reservoir fracture mapping using microearthquakes: Austin chalk, Giddings field, TX and 76 field, Clinton Co., KY

    SciTech Connect (OSTI)

    Phillips, W.S.; Rutledge, J.T.; Gardner, T.L.; Fairbanks, T.D.; Miller, M.E.; Schuessler, B.K.

    1996-11-01

    Patterns of microearthquakes detected downhole defined fracture orientation and extent in the Austin chalk, Giddings field, TX and the 76 field, Clinton Co., KY. We collected over 480 and 770 microearthquakes during hydraulic stimulation at two sites in the Austin chalk, and over 3200 during primary production in Clinton Co. Data were of high enough quality that 20%, 31% and 53% of the events could be located, respectively. Reflected waves constrained microearthquakes to the stimulated depths at the base of the Austin chalk. In plan view, microearthquakes defined elongate fracture zones extending from the stimulation wells parallel to the regional fracture trend. However, widths of the stimulated zones differed by a factor of five between the two Austin chalk sites, indicating a large difference in the population of ancillary fractures. Post-stimulation production was much higher from the wider zone. At Clinton Co., microearthquakes defined low-angle, reverse-fault fracture zones above and below a producing zone. Associations with depleted production intervals indicated the mapped fractures had been previously drained. Drilling showed that the fractures currently contain brine. The seismic behavior was consistent with poroelastic models that predicted slight increases in compressive stress above and below the drained volume.

  2. Nanoscale elastic changes in 2D Ti3C2Tx (MXene) pseudocapacitive electrodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Come, Jeremy; Xie, Yu; Naguib, Michael; Jesse, Stephen; Kalinin, Sergei V.; Gogotsi, Yury; Kent, Paul R. C.; Balke, Nina

    2016-02-01

    Designing sustainable electrodes for next generation energy storage devices relies on the understanding of their fundamental properties at the nanoscale, including the comprehension of ions insertion into the electrode and their interactions with the active material. One consequence of ion storage is the change in the electrode volume resulting in mechanical strain and stress that can strongly affect the cycle life. Therefore, it is important to understand the changes of dimensions and mechanical properties occurring during electrochemical reactions. While the characterization of mechanical properties via macroscopic measurements is well documented, in-situ characterization of their evolution has never been achieved atmore » the nanoscale. Two dimensional (2D) carbides, known as MXenes, are promising materials for supercapacitors and various kinds of batteries, and understating the coupling between their mechanical and electrochemical properties is therefore necessary. Here we report on in-situ imaging, combined with density functional theory of the elastic changes, of a 2D titanium carbide (Ti3C2Tx) electrode in direction normal to the basal plane during cation intercalation. The results show a strong correlation between the Li+ ions content and the elastic modulus, whereas little effects of K+ ions are observed. Moreover, this strategy enables identifying the preferential intercalation pathways within a single particle.« less

  3. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  4. DOE Zero Ready Home Case Study: Sterling Brook Custom Homes, Village Park Eco Home, Double Oak, TX

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Sterling Brook Custom Homes Village Park Eco Home Double Oak, TX DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced

  5. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  6. Freeport, Maine: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Maine.1 References US Census Bureau Incorporated place and minor civil division population dataset (All States, all geography) Retrieved from "http:...

  7. SURFACE GEOPHYSICAL EXPLORATION OF TX-TY TANK FARMS AT THE HANFORD SITE RESULTS OF BACKGROUND CHARACTERIZATION WITH GROUND PENETRATING RADAR

    SciTech Connect (OSTI)

    MYERS DA; CUBBAGE R; BRAUCHLA R; O'BRIEN G

    2008-07-24

    Ground penetrating radar surveys of the TX and TY tank farms were performed to identify existing infrastructure in the near surface environment. These surveys were designed to provide background information supporting Surface-to-Surface and Well-to-Well resistivity surveys of Waste Management Area TX-TY. The objective of the preliminary investigation was to collect background characterization information with GPR to understand the spatial distribution of metallic objects that could potentially interfere with the results from high resolution resistivity{trademark} surveys. The results of the background characterization confirm the existence of documented infrastructure, as well as highlight locations of possible additional undocumented subsurface metallic objects.

  8. Albany, OR * Anchorage, AK * Morgantown, WV * Pittsburgh, PA * Sugar Land, TX

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rodosta Carbon Storage Technology Manager National Energy Technology Laboratory 3610 Collins Ferry Road PO Box 880 Morgantown, WV 26507 304-285-1345 traci.rodosta@netl.doe.gov Bruce Brown Project Manager National Energy Technology Laboratory 626 Cochrans Mill Road P.O. Box 10940 Pittsburgh, PA 15236 412-386-7313 bruce.brown@netl.doe.gov Kathryn Baskin Principal Investigator Managing Director Southern States Energy Board 6325 Amherst Court Norcross, GA 30092 770-242-7712 baskin@sseb.org PARTNERS

  9. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  10. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect (OSTI)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  11. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  12. Alternating magnetic anisotropy of Li2(Li1–xTx)N (T = Mn, Fe, Co, and Ni)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jesche, A.; Ke, L.; Jacobs, J. L.; Harmon, B.; Houk, R. S.; Canfield, P. C.

    2015-05-11

    Substantial amounts of the transition metals Mn, Fe, Co, and Ni can be substituted for Li in single crystalline Li2(Li1–xTx)N. Isothermal and temperature-dependent magnetization measurements reveal local magnetic moments with magnitudes significantly exceeding the spin-only value. The additional contributions stem from unquenched orbital moments that lead to rare-earth-like behavior of the magnetic properties. Accordingly, extremely large magnetic anisotropies have been found. Most notably, the magnetic anisotropy alternates as easy plane→easy axis→easy plane→easy axis when progressing from T = Mn → Fe → Co → Ni. This behavior can be understood based on a perturbation approach in an analytical, single-ion model.more » As a result, the calculated magnetic anisotropies show surprisingly good agreement with the experiment and capture the basic features observed for the different transition metals.« less

  13. Alternating magnetic anisotropy of Li2(Li1xTx)N(T=Mn,Fe,Co,andNi)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jesche, A.; Ke, L.; Jacobs, J. L.; Harmon, B.; Houk, R. S.; Canfield, P. C.

    2015-05-11

    Substantial amounts of the transition metals Mn, Fe, Co, and Ni can be substituted for Li in single crystalline Li2(Li1xTx)N. Isothermal and temperature-dependent magnetization measurements reveal local magnetic moments with magnitudes significantly exceeding the spin-only value. The additional contributions stem from unquenched orbital moments that lead to rare-earth-like behavior of the magnetic properties. Accordingly, extremely large magnetic anisotropies have been found. Most notably, the magnetic anisotropy alternates as easy plane?easy axis?easy plane?easy axis when progressing from T = Mn ? Fe ? Co ? Ni. This behavior can be understood based on a perturbation approach in an analytical, single-ion model.moreAs a result, the calculated magnetic anisotropies show surprisingly good agreement with the experiment and capture the basic features observed for the different transition metals.less

  14. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  15. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  16. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  17. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  18. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  19. U.S. Natural Gas Imports by Pipeline from Canada

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    Barbados Total To Brazil Freeport, TX Sabine Pass, LA Total to Canada Eastport, ID Calais, ME Detroit, MI Marysville, MI Port Huron, MI Crosby, ND Portal, ND Sault St. Marie, MI St. Clair, MI Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to Egypt Freeport, TX Total to India

  20. U.S. Total Exports

    U.S. Energy Information Administration (EIA) Indexed Site

    Barbados Total To Brazil Freeport, TX Sabine Pass, LA Total to Canada Eastport, ID Calais, ME Detroit, MI Marysville, MI Port Huron, MI Crosby, ND Portal, ND Sault St. Marie, MI St. Clair, MI Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Morgan, MT Sherwood, ND Pittsburg, NH Buffalo, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Sweetgrass, MT Total to Chile Sabine Pass, LA Total to China Kenai, AK Sabine Pass, LA Total to Egypt Freeport, TX Total to India

  1. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect (OSTI)

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  2. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  3. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  4. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect (OSTI)

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  5. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  6. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  7. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  8. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  9. Resolving the structure of Ti3C2Tx MXenes through multilevel structural modeling of the atomic pair distribution function

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wesolowski, David J.; Wang, Hsiu -Wen; Page, Katharine L.; Naguib, Michael; Gogotsi, Yury

    2015-12-08

    MXenes are a recently discovered family of two-dimensional (2D) early transition metal carbides and carbonitrides, which have already shown many attractive properties and a great promise in energy storage and many other applications. However, a complex surface chemistry and small coherence length has been an obstacle in some applications of MXenes, also limiting accuracy of predictions of their properties. In this study, we describe and benchmark a novel way of modeling layered materials with real interfaces (diverse surface functional groups and stacking order between the adjacent monolayers) against experimental data. The structures of three kinds of Ti3C2Tx MXenes (T standsmore » for surface terminating species, including O, OH, and F) produced under different synthesis conditions were resolved for the first time using atomic pair distribution function obtained by high-quality neutron total scattering. The true nature of the material can be easily captured with the sensitivity of neutron scattering to the surface species of interest and the detailed third-generation structure model we present. The modeling approach leads to new understanding of MXene structural properties and can replace the currently used idealized models in predictions of a variety of physical, chemical and functional properties of Ti3C2-based MXenes. Furthermore, the developed models can be employed to guide the design of new MXene materials with selected surface termination and controlled contact angle, catalytic, optical, electrochemical and other properties. We suggest that the multi-level structural modeling should form the basis for a generalized methodology on modeling diffraction and pair distribution function data for 2D and layered materials.« less

  10. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  11. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect (OSTI)

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  12. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  13. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  14. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  15. HIA 2015 DOE Zero Energy Ready Home Case Study: Carl Franklin Homes, L.C./Green Extreme Homes, CDC, McKinley Project, Garland TX

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Franklin Homes, L.C./ Green Extreme Homes, CDC McKinley Project Garland, TX DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research.

  16. DOE Zero Ready Home Case Study: Green Extreme Homes & Carl Franklin Homes, First DOE Zero Energy Ready Home Retrofit, Garland, TX

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Extreme Homes & Carl Franklin Homes First DOE Zero Energy Ready Home Retrofit Garland, TX DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building

  17. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  18. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  19. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect (OSTI)

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  20. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  1. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  2. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  3. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect (OSTI)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  4. SU-E-J-48: Imaging Origin-Radiation Isocenter Coincidence for Linac-Based SRS with Novalis Tx

    SciTech Connect (OSTI)

    Geraghty, C; Workie, D; Hasson, B

    2015-06-15

    Purpose To implement and evaluate an image-based Winston-Lutz (WL) test to measure the displacement between ExacTrac imaging origin and radiation isocenter on a Novalis Tx system using RIT V6.2 software analysis tools. Displacement between imaging and radiation isocenters was tracked over time. The method was applied for cone-based and MLC-based WL tests. Methods The Brainlab Winston-Lutz phantom was aligned to room lasers. The ExacTrac imaging system was then used to detect the Winston- Lutz phantom and obtain the displacement between the center of the phantom and the imaging origin. EPID images of the phantom were obtained at various gantry and couch angles and analyzed with RIT calculating the phantom center to radiation isocenter displacement. The RIT and Exactrac displacements were combined to calculate the displacement between imaging origin and radiation isocenter. Results were tracked over time. Results Mean displacements between ExacTrac origin and radiation isocenter were: VRT: −0.1mm ± 0.3mm, LNG: 0.5mm ± 0.2mm, LAT: 0.2mm ± 0.2mm (vector magnitude of 0.7 ± 0.2mm). Radiation isocenter was characterized by the mean of the standard deviations of the WL phantom displacements: σVRT: 0.2mm, σLNG: 0.4mm, σLAT: 0.6mm. The linac couch base was serviced to reduce couch walkout. This reduced σLAT to 0.2mm. These measurements established a new baseline of radiation isocenter-imaging origin coincidence. Conclusion The image-based WL test has ensured submillimeter localization accuracy using the ExacTrac imaging system. Standard deviations of ExacTrac-radiation isocenter displacements indicate that average agreement within 0.3mm is possible in each axis. This WL test is a departure from the tradiational WL in that imaging origin/radiation isocenter agreement is the end goal not lasers/radiation isocenter.

  5. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  6. Characterization of Vadose Zone Sediments Below the TX Tank Farm: Boreholes C3830, C3831, C3832 and RCRA Borehole 299-W10-27

    SciTech Connect (OSTI)

    Serne, R. Jeffrey; Bjornstad, Bruce N.; Horton, Duane G.; Lanigan, David C.; Lindenmeier, Clark W.; Lindberg, Michael J.; Clayton, Ray E.; Legore, Virginia L.; Orr, Robert D.; Kutnyakov, Igor V.; Baum, Steven R.; Geiszler, Keith N.; Valenta, Michelle M.; Vickerman, Tanya S.

    2008-09-11

    This report was revised in September 2008 to remove acid-extractable sodium data from Tables 4.8, 4.28,4.43, and 4.59. The sodium data was removed due to potential contamination introduced during the acid extraction process. The rest of the text remains unchanged from the original report issued in April 2004. The overall goal of the Tank Farm Vadose Zone Project, led by CH2M HILL Hanford Group, Inc., is to define risks from past and future single-shell tank farm activities at Hanford. To meet this goal, CH2M HILL Hanford Group, Inc. tasked scientists from Pacific Northwest National Laboratory to perform detailed analyses on vadose zone sediments from within Waste Management Area (WMA) T-TX-TY. This report is the first of two reports written to present the results of these analyses. Specifically, this report contains all the geologic, geochemical, and selected physical characterization data collected on vadose zone sediment recovered from boreholes C3830, C3831, and C3832 in the TX Tank Farm, and from borehole 299-W-10-27 installed northeast of the TY Tank Farm.

  7. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  8. ~tx421.ptx

    U.S. Energy Information Administration (EIA) Indexed Site

    FRIDAY APRIL 3, 2009 The meeting convened at 9:00 a.m. in Room 8E-089 of the James Forrestal Building, 1000 Independence Avenue, S.W., Washington, D.C., Edward Blair, Chair, presiding. COMMITTEE MEMBERS PRESENT: EDWARD BLAIR, Chair STEVE BROWN BARBARA FORSYTH WALTER HILL VINCENT IANNACCHIONE NANCY KIRKENDALL EDWARD KOKKELENBERG ISRAEL MELENDEZ MICHAEL TOMAN JOHN WEYANT (202) 234-4433 Neal R. Gross & Co., Inc. Page 2 EIA STAFF PRESENT: STEPHANIE BROWN, Designated Federal Official, Director,

  9. Training Session: Euless, TX

    Broader source: Energy.gov [DOE]

    This 3.5-hour training provides builders with a comprehensive review of zero energy-ready home construction including the business case, detailed specifications, and opportunities to be recognized...

  10. ~tx410.ptx

    U.S. Energy Information Administration (EIA) Indexed Site

    ... Some of the comments 6 include coal is not coal is not coal. That 7 was the plant issue, it's not ... So there's a tremendous capability 3 there. It improves the use of fossil-fired ...

  11. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  12. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  13. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  14. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  15. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  16. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  17. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  18. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  19. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  20. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  1. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  2. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  3. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  4. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  5. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  6. Characterization of Vadose Zone Sediments Below the TX Tank Farm: Probe Holes C3830, C3831, C3832 and 299-W10-27

    SciTech Connect (OSTI)

    Serne, R JEFFREY.; Bjornstad, Bruce N.; Horton, Duane G.; Lanigan, David C.; Lindenmeier, Clark W.; Lindberg, Michael J.; Clayton, Ray E.; LeGore, Virginia L.; Orr, Robert D.; Kutnyakov, Igor V.; Baum, Steven R.; Geiszler, Keith N.; Valenta, Michelle M.; Vickerman, Tanya S.

    2004-04-01

    Pacific Northwest National Laboratory performed detailed analyses on vadose zone sediments from within Waste Management Area T-TX-TY. This report contains all the geologic, geochemical, and selected physical characterization data collected on vadose zone sediment recovered from three probe holes (C3830, C3831, and C3832) in the TX Tank Farm, and from borehole 299-W-10-27. Sediments from borehole 299-W-10-27 are considered to be uncontaminated sediments that can be compared with contaminated sediments. This report also presents our interpretation of the sediment lithologies, the vertical extent of contamination, the migration potential of the contaminants, and the likely source of the contamination in the vadose zone and groundwater below the TX Tank Farm. Sediment from the probe holes was analyzed for: moisture, radionuclide and carbon contents;, one-to-one water extracts (soil pH, electrical conductivity, cation, trace metal, and anion data), and 8 M nitric acid extracts. Overall, our analyses showed that common ion exchange is a key mechanism that influences the distribution of contaminants within that portion of the vadose zone affected by tank liquor. We did not observe significant indications of caustic alteration of the sediment mineralogy or porosity, or significant zones of slightly elevated pH values in the probe holes. The sediments do show that sodium-, nitrate-, and sulfate-dominated fluids are present. The fluids are more dilute than tank fluids observed below tanks at the SX and BX Tank Farms. Three primary stratigraphic units were encountered in each probe hole: (1) backfill material, (2) the Hanford formation, and (3) the Cold Creek unit. Each of the probe holes contain thin fine-grained layers in the Hanford H2 stratigraphic unit that may impact the flow of leaked fluids and effect irregular and horizontal flow. The probe holes could not penetrate below the enriched calcium carbonate strata of the Cold Creek lower subunit; therefore, we did not

  7. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  8. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  9. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  10. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  11. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  12. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  13. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  14. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  15. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  16. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  17. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  18. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  19. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  20. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  1. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  2. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  3. US, Latvia Commission Radiation Detection Equipment at Freeport...

    National Nuclear Security Administration (NNSA)

    has been working with SBG on projects at seven sites and a training center in Latvia. ... Through its SLD program, NNSA also provides training to host government law enforcement ...

  4. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  5. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    SciTech Connect (OSTI)

    Mohan, Nagaboopathy; Raghavan, Srinivasan; Manikant,; Soman, Rohith

    2015-10-07

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  6. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  7. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  8. Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

    SciTech Connect (OSTI)

    Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-06-15

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

  9. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  10. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.