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Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

NY  

Office of Legacy Management (LM)

NY NY 17.8 Prepared by Oak Ridge Associated Universities Prepgred for Office of Operationaf Safety U.S. Department of Energy Ezrt /ur / POST REMEDIAL ACTION SURVEY PROPERTY OF MODERN LANDFILL, INC. FORMER LOOW SITE LEWISTON, NEW YORK J.D. BERGER R a d i o l o g l c a l S t t e A s s e s s r n e n t P r o g r a m M a n p o t a e r E d u c a t l o n , R e s e a r c h , a n d T r a l n i n g D l v i s l o n FINAL REPORT January 1982 POST REIEDIAT ACTION SURVBY PROPERTY OF }TODBRN I.AIIDPILL' INC. rONGB LOOTI SITE LEIIISTOI, NEI{ YORK Prepared for U.S. Department of Eaergy J . D . B e r g e r P r o j e c t S t a f f R.D. Coudra C.F. Rienke P.[. Frane C.F. 9legver [f.0. Eelton L.A. Young Prepered by Radiological Site Aseessuent Progrm Dlanpower Educatioor Researchr and Training Diviaion Oak Ridge Acaociated Univereitiea Oak Ridger Tenneggee 37830 FINAL REPORT January 1982 Thls report ls based on work performed under contract number DB-AC05-760RO0033 wlth

2

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

3

Table 2 -Lime use and practices on Corn, major producing states, 2001 CO GA IL IN IA KS KY MI MN MO NE NY NC ND OH PA SD TX WI Area  

E-Print Network (OSTI)

Table 2 - Lime use and practices on Corn, major producing states, 2001 CO GA IL IN IA KS KY MI MN.7 Table 2 - Lime use and practices on Corn, major producing states, 2000 CO IL IN IA KS KY MI MN MO NE NY use and practices on Corn, major producing states, 1999 CO IL IN IA KS KY MI MN MO NE NC OH SD TX WI

Kammen, Daniel M.

4

DOE - Office of Legacy Management -- Buffalo NY Site - NY 54  

NLE Websites -- All DOE Office Websites (Extended Search)

Buffalo NY Site - NY 54 Buffalo NY Site - NY 54 FUSRAP Considered Sites Buffalo, NY Alternate Name(s): Bliss & Laughlin Steel Company Niagara Cold Drawn Steel Corporation Ramco Steel Incorporated NY.54-1 NY.54-4 Location: 110 Hopkins Street, Buffalo, New York NY.54-1 Historical Operations: Machined and straightened uranium rods as subcontracted work from National Lead Company, an AEC contractor. NY.54-3 NY.54-4 LTSM012601 Eligibility Determination: Eligible NY.54-4 Radiological Survey(s): Assessment Surveys, Verification Surveys NY.54-6 NY.54-7 NY.54-8 LTSM012601 Site Status: Certified- Certification Basis and Certification Statement BLS000001 LTSM012152 LTSM012584 Long-term Care Requirements: Long-Term Surveillance and Maintenance Requirements for Remediated FUSRAP Sites S07566_FUSRAP

5

NY Green Bank  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Public Meeting in New York, NY: Energy Infrastructure Finance The conventional clean energy capital markets for large scale infrastructure are deep and robust. These markets...

6

PMC·I'Fl.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

I'Fl. I'Fl. 1)··1.0) , u.s. DEPARTUENT OF ENERGY EERE PROJECT M ANAGEMENT CENTER NEPA DETERl\IINATION RECIPIENT:Escambia County PROJECT TITLE: Landfill Gas Extraction and Control System Expansion and Modernization Page I of2 STATE: FL Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA-0000013 DE-EE0000784 0 Based on my review of the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling). document preparation (such as conceptual design or feasibility studies, analytical energy supply

7

Category:Tampa, FL | Open Energy Information  

Open Energy Info (EERE)

Tampa, FL" Tampa, FL" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Tampa FL Florida Power & Light Co..png SVFullServiceRestauran... 77 KB SVHospital Tampa FL Florida Power & Light Co..png SVHospital Tampa FL Fl... 80 KB SVLargeHotel Tampa FL Florida Power & Light Co..png SVLargeHotel Tampa FL ... 77 KB SVLargeOffice Tampa FL Florida Power & Light Co..png SVLargeOffice Tampa FL... 76 KB SVMediumOffice Tampa FL Florida Power & Light Co..png SVMediumOffice Tampa F... 78 KB SVMidriseApartment Tampa FL Florida Power & Light Co..png SVMidriseApartment Tam... 78 KB SVOutPatient Tampa FL Florida Power & Light Co..png SVOutPatient Tampa FL ... 77 KB SVPrimarySchool Tampa FL Florida Power & Light Co..png SVPrimarySchool Tampa ...

8

Category:Miami, FL | Open Energy Information  

Open Energy Info (EERE)

Miami, FL" Miami, FL" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Miami FL Florida Power & Light Co..png SVFullServiceRestauran... 77 KB SVHospital Miami FL Florida Power & Light Co..png SVHospital Miami FL Fl... 80 KB SVLargeHotel Miami FL Florida Power & Light Co..png SVLargeHotel Miami FL ... 78 KB SVLargeOffice Miami FL Florida Power & Light Co..png SVLargeOffice Miami FL... 76 KB SVMediumOffice Miami FL Florida Power & Light Co..png SVMediumOffice Miami F... 79 KB SVMidriseApartment Miami FL Florida Power & Light Co..png SVMidriseApartment Mia... 78 KB SVOutPatient Miami FL Florida Power & Light Co..png SVOutPatient Miami FL ... 77 KB SVPrimarySchool Miami FL Florida Power & Light Co..png SVPrimarySchool Miami ...

9

Category:Syracuse, NY | Open Energy Information  

Open Energy Info (EERE)

Syracuse, NY Syracuse, NY Jump to: navigation, search Go Back to PV Economics By Location Media in category "Syracuse, NY" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Syracuse NY Consolidated Edison Co-NY Inc.png SVFullServiceRestauran... 70 KB SVQuickServiceRestaurant Syracuse NY Consolidated Edison Co-NY Inc.png SVQuickServiceRestaura... 70 KB SVHospital Syracuse NY Consolidated Edison Co-NY Inc.png SVHospital Syracuse NY... 66 KB SVLargeHotel Syracuse NY Consolidated Edison Co-NY Inc.png SVLargeHotel Syracuse ... 69 KB SVLargeOffice Syracuse NY Consolidated Edison Co-NY Inc.png SVLargeOffice Syracuse... 68 KB SVMediumOffice Syracuse NY Consolidated Edison Co-NY Inc.png SVMediumOffice Syracus... 67 KB SVMidriseApartment Syracuse NY Consolidated Edison Co-NY Inc.png

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Category:Rochester, NY | Open Energy Information  

Open Energy Info (EERE)

Rochester, NY Rochester, NY Jump to: navigation, search Go Back to PV Economics By Location Media in category "Rochester, NY" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Rochester NY Consolidated Edison Co-NY Inc.png SVFullServiceRestauran... 70 KB SVQuickServiceRestaurant Rochester NY Consolidated Edison Co-NY Inc.png SVQuickServiceRestaura... 71 KB SVHospital Rochester NY Consolidated Edison Co-NY Inc.png SVHospital Rochester N... 65 KB SVLargeHotel Rochester NY Consolidated Edison Co-NY Inc.png SVLargeHotel Rochester... 69 KB SVLargeOffice Rochester NY Consolidated Edison Co-NY Inc.png SVLargeOffice Rocheste... 67 KB SVMediumOffice Rochester NY Consolidated Edison Co-NY Inc.png SVMediumOffice Rochest... 67 KB SVMidriseApartment Rochester NY Consolidated Edison Co-NY Inc.png

11

FL J. Smith, Jr.  

Office of Legacy Management (LM)

ct. B. Duillap ct. B. Duillap (THPJJs L. Kassel) FL J. Smith, Jr. c c Kelley from R. 1. Cook, Kslley from R. 1. Cook, J J cit cit In accordawe with Secret memorandum dated October , 1951 ta IA. E. In accordawe with Secret rwmorandnn dated October , 1951 ta IA. E. Qapletad Uranium for HAA and ML," we are Ylepletad Uranium for HAA and ML," we are obligated to fill the following orders obligated to fill the following orders North American Aviation North American Aviation . . One Inch roes One Inch roes a. Depleted U nrptalj U-235 content= 0.&9 f O.O& Meterial must be homogenemsj uniformity of assay, O&Q5%. : b. Diemeterc 0.99P (1( O.ooOn, - 0.003")j de-hrmd. YI E ,g C* pwh b" f1/32" Classification Cancelled d. Humber of rods: 1800

12

DOE - Office of Legacy Management -- New York, NY, Site - NY 61  

Office of Legacy Management (LM)

York, NY, Site - NY 61 York, NY, Site - NY 61 FUSRAP Considered Sites New York, NY Alternate Name(s): Baker and Williams Warehouses Ralph Ferrara Company Warehouses Ralph Ferrara, Inc. NY.61-2 Location: 513-519, 521-527, and 529-535 West 20th Street, New York, New York NY.61-3 Historical Operations: Received and stored uranium ores and concentrates for MED. NY.61-5 NY.61-6 NY.61-7 Eligibility Determination: Eligible NY.61-1 NY.61-2 Radiological Survey(s): Assessment Surveys, Verification Surveys NY.61-3 NY.61-4 NY.61-8 NY.61-9 NY.61-10 Site Status: Certified - Certification Basis, Federal Register Notice Included NY.61-11 Long-term Care Requirements: Long-Term Surveillance and Maintenance Requirements for Remediated FUSRAP Sites S07566_FUSRAP Also see New York, New York, Site

13

RECIPIENT:Lake County, FL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Lake County, FL Lake County, FL u.s. DEPARTIIIEN T OF ENERGY EERE PROJECT MANAGEMENT CEN T ER NEPA DETERlIJJNATION PROJECf TITLE: Lake County, FL EECBG SOW (S) Page lof2 STATE: FL Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Numbcr CID Numbtr OE·FOA-OOOOO13 DE·EE00Q0786.001 0 Based on my review of the information concerning the proposed adion, as NEPA Compliance Officer (authorized undtr DOE Order 451.IA), I have made the following determination: ex. EA, EIS APPENDIX AND NUMBER: Description: 65.1 Actions to conserve energy, demonstrate potential energy conserva tion, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical

14

DOE - Office of Legacy Management -- Niagara Falls Storage Site NY - NY 17  

Office of Legacy Management (LM)

Niagara Falls Storage Site NY - NY Niagara Falls Storage Site NY - NY 17 FUSRAP Considered Sites Niagara Falls Storage Site, NY Alternate Name(s): Lake Ontario Ordnance Works (LOOW) Niagara Falls Storage Site (NFSS) DOE-Niagara Falls Storage Site NY.17-1 NY.17-3 Location: Lewiston, New York NY.17-5 Historical Operations: Stored, shipped, and buried radioactive equipment and waste for MED and AEC containing uranium, radium, and thorium. Contains Interim Waste Containment Structure. NY.17-1 NY.17-2 NY.17-14 Eligibility Determination: Eligible NY.17-4 Radiological Survey(s): Assessment Surveys NY.17-3 NY.17-5 NY.17-6 NY.17-7 NY.17-8 NY.17-9 NY.17-10 NY.17-11 NY.17-12 NY.17-14 Site Status: Cleanup in progress by U.S. Army Corps of Engineers. NY.17-13 NY.17-14 NY.17-15 NY.17-16 USACE Website Long-term Care Requirements: To be determined upon completion.

15

ACIM-~ NY.49  

Office of Legacy Management (LM)

' ' h:. ,,, ,_" , ACIM-~ NY.49 .,. i MEMORANDUM TO: FILE DATE FE: __~-tt_c~7' e_-_~-~------- --------- "%Kf-- ---- ---i------- Current: ~~~~~~--------__---_______ xf yee, date contacted- IVPE OF OPERATION f- ------------- Research & Development 0 Production scale testing 0 Pilot Scale 0 Bench Scale Process z Theoretical Studies Sample 84 Analysis 0 Production 0 Disposal/Storage a Facility Type 0 Manufacturing 0 University 0 Research Organization 0 Government Sponsored Fat a Other ------------------ c] Prime 0 Other information (i.e., co 0 Subcontractor + fixed fee, unit price, 0 Purchase Order time & material, +x:) G-----------^-------------- . ~~~~-----____~-~----------~ Contract/Purchase Order # ---------------------------------

16

NY-%-3 P  

Office of Legacy Management (LM)

NY-%-3 NY-%-3 P m F P F ?- P m ?- c m P P CII (I pl F F- 3?r -J-J-. _- /, i ;. / 0 Aerospace Report No. ATR-82 (796344-2 i Aq, is y !i,' Evaluation of the 1943Hto# 1946 ilid Liquid Effluent Discharge From the Linde Air Products Company Ceramics Plant December 198 I Prepared for Office of Operational Safety Assistant Secretary for Environmental Protection, Safety, and Emergency Preparedness U.S. DEPARTMENT OF ENERGY Prepared by Environment and Conservation Directorate Eastern Technical Division THE AEROSPACE CORPORATION Germantown, Maryland Contract No. DE-ACOP-81EV10532 I- ,- A e r o s p a c e R e p o r t N o . A T R - 8 2 ( 7 9 6 3 - 0 4 ) - 2 E V A L U A T IO N O F T H E 1 9 4 3 - T O - 1 9 4 6 L IQ U ID E F F L U E N T D IS C H A R G E F R O M T H E L INDE A IR P R O D U C T S C O M P A N Y C E R A M ICS P L A N T D e c e m b e r 1 9 8 1 P r e p a r e d for O

17

DOE - Office of Legacy Management -- Guterl Specialty Steel - NY 12  

Office of Legacy Management (LM)

Guterl Specialty Steel - NY 12 Guterl Specialty Steel - NY 12 FUSRAP Considered Sites Guterl Specialty Steel, NY Alternate Name(s): Simonds Saw and Steel Co. Guterl Steel Allegheny Ludlum Steel Corp. NY.12-1 NY.12-2 Location: Ohio Street and Route 95, Lockport, New York NY.12-12 Historical Operations: Performed rolling mill operations on natural uranium and thorium metal. NY.12-6 NY.12-7 Eligibility Determination: NY.12-11 Radiological Survey(s): Assessment Surveys NY.12-1 NY.12-4 NY.12-8 NY.12-9 NY.12-12 Site Status: Cleanup pending by U.S. Army Corps of Engineers. NY.12-10 NY.12-11 USACE Website Long-term Care Requirements: To be determined upon completion. Also see Documents Related to Guterl Specialty Steel, NY NY.12-1 - ORNL Letter; Cottrell to Turi; Radiological Survey of the

18

DOE - Office of Legacy Management -- Colonie - NY 06  

NLE Websites -- All DOE Office Websites (Extended Search)

Considered Sites > Colonie - NY 06 Considered Sites > Colonie - NY 06 FUSRAP Considered Sites Colonie, NY Alternate Name(s): Colonie Interim Storage Site National Lead Industries NY.06-1 Location: 1130 Central Avenue, Colonie, New York NY.06-1 Historical Operations: Fabricated and processed uranium metal for the AEC, resulting in contamination from thorium and natural, enriched, and depleted uranium. NY.06-1 NY.06-4 NY.06-5 Eligibility Determination: Eligible NY.06-2 NY.06-3 Radiological Survey(s): Assessment Surveys, Verification Surveys NY.06-6 NY.06-7 Site Status: Cleanup in progress by U.S. Army Corps of Engineers. NY.06-8 NY.06-9 NY.06-10 NY.06-11 USACE Website Long-term Care Requirements: To be determined upon completion. Also see Documents Related to Colonie, NY Colonie Site Aerial Photograph

19

DOE - Office of Legacy Management -- Gardinier Inc - FL 05  

Office of Legacy Management (LM)

Gardinier Inc - FL 05 Gardinier Inc - FL 05 FUSRAP Considered Sites Site: GARDINIER, INC. ( FL.05 ) Eliminated from consideration under FUSRAP - Referred to EPA and State of Florida Designated Name: Not Designated Alternate Name: U. S. Phosphoric Products FL.05-1 Location: Tampa , Florida FL.05-2 Evaluation Year: 1984 FL.05-3 Site Operations: U. S. Phosphoric Products constructed and operated a small scale pilot plant for uranium recovery; and Gardinier investigated a process for the recovery of by-product uranium from wet process phosphoric acid. FL.05-1 FL.05-6 FL.05-7 Site Disposition: Eliminated - No Authority FL.05-3 FL.05-8 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium FL.05-6 FL.05-7 Radiological Survey(s): Yes FL.05-2

20

St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids...

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

DOE - Office of Legacy Management -- Niagara Falls Vicinity Properties NY -  

Office of Legacy Management (LM)

Niagara Falls Vicinity Properties Niagara Falls Vicinity Properties NY - NY 17 FUSRAP Considered Sites Niagara Falls Vicinity Properties, NY Alternate Name(s): Lake Ontario Ordnance Works (LOOW) Niagara Falls Storage Site (NFSS) DOE-Niagara Falls Storage Site NY.17-1 NY.17-3 Location: Lewiston , New York NY.17-5 Historical Operations: Stored, shipped, and buried radioactive equipment and waste for MED and AEC containing uranium, radium, and thorium. Portions of the former site are privately owned, creating a "site" for the vicinity properties. NY.17-1 NY.17-2 NY.17-14 Eligibility Determination: Eligible NY.17-4 Radiological Survey(s): Assessment Surveys, Verification Surveys NY.17-3 NY.17-5 NY.17-6 NY.17-7 NY.17-8 NY.17-9 NY.17-10 NY.17-11 NY.17-12 NY.17-14 Site Status: Certification Basis, including Federal Register Notice for 23 properties. Cleanup in progress for additional 3 VPs. NY.17-13

22

DOE - Office of Legacy Management -- University of Florida - FL 09  

NLE Websites -- All DOE Office Websites (Extended Search)

Florida - FL 09 Florida - FL 09 FUSRAP Considered Sites Site: UNIVERSITY OF FLORIDA (FL.09) Eliminated from consideration under FUSRAP - Referred to NRC Designated Name: Not Designated Alternate Name: None Location: Gainesville , Florida FL.09-1 Evaluation Year: 1995 FL.09-1 Site Operations: Research and development using test quantities of radioactive metal. FL.09-2 Site Disposition: Eliminated - No Authority - NRC licensed FL.09-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Test Quantities of Uranium and Plutonium FL.09-2 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP - Referred to NRC FL.09-2 Also see Documents Related to UNIVERSITY OF FLORIDA FL.09-1 - DOE Letter; Wagoner to DeLaney; Subject: University of

23

DOE - Office of Legacy Management -- Humphreys Gold Co - FL 08  

Office of Legacy Management (LM)

Humphreys Gold Co - FL 08 Humphreys Gold Co - FL 08 FUSRAP Considered Sites Site: Humphreys Gold Co. (FL.08 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Jacksonville , Florida FL.08-1 Evaluation Year: 1987 FL.08-2 FL.08-3 Site Operations: Processed monazite ore in the 1950s. FL.08-3 Site Disposition: Eliminated - No Authority - No AEC involvement at the site FL.08-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Thorium FL.08-1 Radiological Survey(s): No Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to Humphreys Gold Co. FL.08-1 - AEC Memorandum; Edmonds to McCarvill; Subject: Monazite Dredging Operations and Placer Deposits Containing Thorium Minerals; June

24

NY.O-20- I  

Office of Legacy Management (LM)

; I.-' ; I.-' NY.O-20- I ' 3% 3 MEMORANDUM TO: FILE FKOM: An&x?! w311E? SUHYECT: .Elimination of Pyroferric Co. New Yor SITE ALT NAME: EYE&XCLG f2!Y2~!2Y 621 E. 216th St. CITY: N__ew_ yw-r; STATE: N__V _ok!kEKm. Past: P_rrof_errrLc Go: current: Qwner contacted X yes no; if yes, date co Past owner2 IYE OE C)PEEux!N g Research et Develapment Faci - Production scale testing x M XX - Experimental tests U - Henoh.Scale Process R - Theoretical Studies Gove - Sample % Analysis 0 Production Disposal/Storage "t acted 1 1/10/G iz 17 -&49s300 move !d t li ari ty TYPO "i e+i "! "7 Prime Othe X Subcontractor Furcharje Order r: + fixed time 8: n k, Elr( NY NATE NI?IME: P_YD2fC Inter" Contract/Purchase Order # 33482 with AMF ----- ---- ---

25

DOE - Office of Legacy Management -- Syracuse University - NY 29  

Office of Legacy Management (LM)

Syracuse University - NY 29 Syracuse University - NY 29 FUSRAP Considered Sites Site: SYRACUSE UNIVERSITY (NY.29) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Syracuse , New York NY.29-1 Evaluation Year: 1994 NY.29-2 Site Operations: Activities included work with uranium oxide and the precipitation of thorium iodate from homogeneous solution. NY.29-1 NY.29-3 NY.29-4 Site Disposition: Eliminated - Potential for contamination remote NY.29-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium, Thorium NY.29-3 NY.29-4 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to SYRACUSE UNIVERSITY NY.29-1 - AEC Memorandum; Belmore to Rodden; Request for Uranium

26

DOE - Office of Legacy Management -- Bethlehem Steel Corporation - NY 02  

Office of Legacy Management (LM)

Bethlehem Steel Corporation - NY 02 Bethlehem Steel Corporation - NY 02 FUSRAP Considered Sites Site: BETHLEHEM STEEL CORPORATION (NY.02 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Lackawanna , New York NY.02-1 Evaluation Year: 1985 NY.02-2 Site Operations: Conducted high temperature alpha-phase rolling tests on uranium metal in the 1950s. NY.02-3 Site Disposition: Eliminated - Radiation levels below criteria NY.02-5 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium NY.02-3 Radiological Survey(s): Yes NY.02-4 NY.02-5 Site Status: Eliminated from consideration under FUSRAP NY.02-6 Also see Documents Related to BETHLEHEM STEEL CORPORATION NY.02-1 - Bethlehem Steel Corp. Letter; Subject: Completed Access

27

Category:New York, NY | Open Energy Information  

Open Energy Info (EERE)

York, NY York, NY Jump to: navigation, search Go Back to PV Economics By Location Media in category "New York, NY" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant New York NY Consolidated Edison Co-NY Inc.png SVFullServiceRestauran... 70 KB SVQuickServiceRestaurant New York NY Consolidated Edison Co-NY Inc.png SVQuickServiceRestaura... 71 KB SVHospital New York NY Consolidated Edison Co-NY Inc.png SVHospital New York NY... 64 KB SVLargeHotel New York NY Consolidated Edison Co-NY Inc.png SVLargeHotel New York ... 68 KB SVLargeOffice New York NY Consolidated Edison Co-NY Inc.png SVLargeOffice New York... 67 KB SVMediumOffice New York NY Consolidated Edison Co-NY Inc.png SVMediumOffice New Yor... 67 KB SVMidriseApartment New York NY Consolidated Edison Co-NY Inc.png

28

Los Alamos technology to be featured on CSI: NY  

NLE Websites -- All DOE Office Websites (Extended Search)

on CSI: NY Los Alamos technology to be featured on CSI: NY The multipurpose "sampler gun" rapidly collects and tracks radiological, chemical, and biological samples in solid,...

29

Price of Massena, NY Natural Gas Pipeline Exports to Canada ...  

U.S. Energy Information Administration (EIA) Indexed Site

Massena, NY Natural Gas Pipeline Exports to Canada (Dollars per Thousand Cubic Feet) Price of Massena, NY Natural Gas Pipeline Exports to Canada (Dollars per Thousand Cubic Feet)...

30

DOE - Office of Legacy Management -- Memorial Hospital - NY 0...  

Office of Legacy Management (LM)

Memorial Hospital - NY 0-16 FUSRAP Considered Sites Site: MEMORIAL HOSPITAL (NY.0-16 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name:...

31

DOE - Office of Legacy Management -- Hooker Chemical Co - NY 05  

Office of Legacy Management (LM)

Hooker Chemical Co - NY 05 Hooker Chemical Co - NY 05 FUSRAP Considered Sites Site: Hooker Chemical Co. (NY.05) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: Occidental Chemical Corporation Hooker Electrochemical Corporation NY.05-1 NY.05-2 Location: Niagara Falls , New York NY.05-3 Evaluation Year: 1985 NY.05-1 NY.05-2 Site Operations: Design, engineering, construction, equipping and operation of a plant for the manufacture of Product 45 (xylene hexachloride); MFL (Miller's fluorolubricant); P-45Cl; and recovered P-45Cl2 from residues produced in the manufacture of P-45Cl; used hydrochloric acid (a byproduct of the P-45 Program) in the chemical processing of uranium-bearing slag as a precursor to recovery. NY.05-2 NY.05-4 Site Disposition: Eliminated - Radiation levels below criteria NY.05-1

32

DOE - Office of Legacy Management -- New York University - NY 50  

Office of Legacy Management (LM)

University - NY 50 University - NY 50 FUSRAP Considered Sites Site: NEW YORK UNIVERSITY (NY.50) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: New York , New York NY.50-1 Evaluation Year: 1987 NY.50-1 Site Operations: Activities were related to equipment development. Counters and a small quantity of uranium oxide were provided by the AEC for work under contract AT(30-1)-1256. NY.50-2 NY.50-3 NY.50-4 NY.50-1 Site Disposition: Eliminated - Potential for contamination considered remote - Limited quantity of radioactive material used at this site NY.50-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium NY.50-2 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP

33

DOE - Office of Legacy Management -- Gleason Works - NY 55  

Office of Legacy Management (LM)

Gleason Works - NY 55 Gleason Works - NY 55 FUSRAP Considered Sites Site: GLEASON WORKS (NY.55 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Rochester , New York NY.55-1 Evaluation Year: 1994 NY.55-2 Site Operations: Metal fabrication operations - Rolled uranium metal. NY.55-1 Site Disposition: Eliminated - Potential for contamination considered remote NY.55-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium NY.55-1 Radiological Survey(s): Health and Safety Monitoring NY.55-1 NY.55-3 Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to GLEASON WORKS NY.55-1 - NLO Report; Klein to Quigley; Trip Report to the Gleason Works, Rochester, New York on October 30 Thru November 10, 1961; December

34

Northeast - NY NJ CT PA Area | Open Energy Information  

Open Energy Info (EERE)

Northeast - NY NJ CT PA Area Northeast - NY NJ CT PA Area (Redirected from New York Area - NY NJ CT PA) Jump to: navigation, search Contents 1 Clean Energy Clusters in the Northeast - NY NJ CT PA Area 1.1 Products and Services in the Northeast - NY NJ CT PA Area 1.2 Research and Development Institutions in the Northeast - NY NJ CT PA Area 1.3 Networking Organizations in the Northeast - NY NJ CT PA Area 1.4 Investors and Financial Organizations in the Northeast - NY NJ CT PA Area 1.5 Policy Organizations in the Northeast - NY NJ CT PA Area Clean Energy Clusters in the Northeast - NY NJ CT PA Area Products and Services in the Northeast - NY NJ CT PA Area Loading map... {"format":"googlemaps3","type":"ROADMAP","types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"limit":500,"offset":0,"link":"all","sort":[""],"order":[],"headers":"show","mainlabel":"","intro":"","outro":"","searchlabel":"\u2026

35

DOE - Office of Legacy Management -- Electromet Corporation - NY 04  

Office of Legacy Management (LM)

Electromet Corporation - NY 04 Electromet Corporation - NY 04 FUSRAP Considered Sites Site: Electromet Corporation (NY.04 ) Eliminated from consideration under FUSRAP - Referred to US EPA and New York State Designated Name: Not Designated Alternate Name: None Location: 4625 Royal Avenue , Niagara Falls , New York NY.04-1 Evaluation Year: 1985 NY.04-2 NY.04-3 Site Operations: Cast zirconium sponge into ingots in the 1950s. NY.04-4 Site Disposition: Eliminated - No Authority NY.04-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium, Zirconium NY.04-4 Radiological Survey(s): Yes NY.04-6 Site Status: Eliminated from consideration under FUSRAP - Referred to US EPA and New York State NY.04-2 Also see Documents Related to Electromet Corporation

36

Fl YO Co -op E athea lectric  

E-Print Network (OSTI)

are based on a false premise that the cost and usage pattern for energy in the Pacific Northwest should and Energy Efficiency The High Level indicator of "Regional Electricity Use per Person vs. US Average" shouldFl YO Co -op E athea lectric Community...Integrity...Reliability 2510 U.S. Highway 2 East

37

DOE - Office of Legacy Management -- Rensslaer Polytechnic Institute - NY  

Office of Legacy Management (LM)

Rensslaer Polytechnic Institute - Rensslaer Polytechnic Institute - NY 18 FUSRAP Considered Sites Site: RENSSLAER POLYTECHNIC INSTITUTE (NY.18 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Troy , New York NY.18-1 Evaluation Year: 1987 NY.18-1 Site Operations: Research activities involving small quantities of radioactive materials in a controlled environment - under AEC license. NY.18-1 Site Disposition: Eliminated - Potential for residual contamination considered remote NY.18-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Not Specified NY.18-1 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to RENSSLAER POLYTECHNIC INSTITUTE

38

DOE - Office of Legacy Management -- Seneca Army Depot - NY 11  

NLE Websites -- All DOE Office Websites (Extended Search)

Seneca Army Depot - NY 11 Seneca Army Depot - NY 11 FUSRAP Considered Sites Site: SENECA ARMY DEPOT (NY.11 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Romulus , New York Evaluation Year: 1985 NY.11-2 NY.11-3 Site Operations: Eleven bunkers were used to store approximately 2,000 drums of pitchblende ore in the early 1940's. The bunkers were returned to munitions storage service after removal of the ore drums. NY.11-4 Site Disposition: Eliminated - Referred to The Department of the Army NY.11-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Pitchblende Ore NY.11-3 Radiological Survey(s): Yes NY.11-5 Site Status: Eliminated from consideration under FUSRAP NY.11-2 Also see Documents Related to SENECA ARMY DEPOT

39

DOE - Office of Legacy Management -- Radiation Applications Inc - NY 57  

NLE Websites -- All DOE Office Websites (Extended Search)

Radiation Applications Inc - NY 57 Radiation Applications Inc - NY 57 FUSRAP Considered Sites Site: RADIATION APPLICATIONS, INC. ( NY.57 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: RAI NY.57-1 Location: 370 Lexington Avenue , New York , New York NY.57-3 Evaluation Year: 1991 NY.57-4 Site Operations: Developed foam separation techniques and proposed investigations to remove cesium and strontium from fission product waste solutions. No indication that a substantial quantity of radioactive material was involved. NY.57-3 NY.57-5 Site Disposition: Eliminated - Potential for contamination considered remote NY.57-4 Radioactive Materials Handled: None Indicated NY.57-1 Primary Radioactive Materials Handled: None Indicated Radiological Survey(s): None Indicated

40

DOE - Office of Legacy Management -- Love Canal - NY 24  

Office of Legacy Management (LM)

Love Canal - NY 24 Love Canal - NY 24 FUSRAP Considered Sites Site: LOVE CANAL (NY.24 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None NY.24-1 Location: Region running from Old Military Road from the 16-acre rectangular piece of land in the southeast corner of Niagara Falls into the Township of Lewiston , Niagara Falls , New York NY.24-3 Evaluation Year: 1987 NY.24-1 Site Operations: Chemical storage and disposal. NY.24-1 NY.24-3 Site Disposition: Eliminated - No residual radioactive material found NY.24-1 Radioactive Materials Handled: None Indicated Primary Radioactive Materials Handled: None Indicated Radiological Survey(s): Yes NY.24-5 Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to LOVE CANAL

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

DOE - Office of Legacy Management -- Markite Co - NY 49  

Office of Legacy Management (LM)

Markite Co - NY 49 Markite Co - NY 49 FUSRAP Considered Sites Site: MARKITE CO. (NY.49 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 155 Waverly Place , New York , New York NY.49-1 Evaluation Year: 1987 NY.49-2 Site Operations: Conducted experiments with very small amounts of uranium and thorium. NY.49-2 Site Disposition: Eliminated - Handled limited amounts of radioactive materials - Potential for contamination remote NY.49-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium, Thorium NY.49-2 NY.49-3 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to MARKITE CO. NY.49-1 - AEC Memorandum; Morgan to Youngs; Accountability at

42

Northeast - NY NJ CT PA Area | Open Energy Information  

Open Energy Info (EERE)

Northeast - NY NJ CT PA Area Northeast - NY NJ CT PA Area Jump to: navigation, search Contents 1 Clean Energy Clusters in the Northeast - NY NJ CT PA Area 1.1 Products and Services in the Northeast - NY NJ CT PA Area 1.2 Research and Development Institutions in the Northeast - NY NJ CT PA Area 1.3 Networking Organizations in the Northeast - NY NJ CT PA Area 1.4 Investors and Financial Organizations in the Northeast - NY NJ CT PA Area 1.5 Policy Organizations in the Northeast - NY NJ CT PA Area Clean Energy Clusters in the Northeast - NY NJ CT PA Area Products and Services in the Northeast - NY NJ CT PA Area Loading map... {"format":"googlemaps3","type":"ROADMAP","types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"limit":500,"offset":0,"link":"all","sort":[""],"order":[],"headers":"show","mainlabel":"","intro":"","outro":"","searchlabel":"\u2026

43

DOE - Office of Legacy Management -- National Carbon Co - NY 48  

Office of Legacy Management (LM)

Carbon Co - NY 48 Carbon Co - NY 48 FUSRAP Considered Sites Site: NATIONAL CARBON CO (NY.48) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: New York , New York NY.48-1 Evaluation Year: 1987 NY.48-2 Site Operations: Produced graphite for the MED/AEC. NY.48-1 NY.48-2 NY.48-3 Site Disposition: Eliminated - Potential for residual radioactive contamination considered remote - No indication that radioactive material was used on the site NY.48-2 Radioactive Materials Handled: No Primary Radioactive Materials Handled: None Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to NATIONAL CARBON CO NY.48-1 - AEC Letter; Crenshaw to National Carbon Company (Attn.:

44

DOE - Office of Legacy Management -- Buflovak Co - NY 56  

Office of Legacy Management (LM)

Buflovak Co - NY 56 Buflovak Co - NY 56 FUSRAP Considered Sites Site: Buflovak Co. (NY.56 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 1543 Fillmore Ave. , Buffalo , New York NY.56-1 Evaluation Year: 1991 NY.56-2 Site Operations: Research and testing with uranium raffinate. NY.56-1 Site Disposition: Eliminated - Possibility for contamination considered remote due to scope of tests conducted and indication of cleanup operations after tests NY.56-1 NY.56-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium Raffinate NY.56-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP Also see Documents Related to Buflovak Co.

45

DOE - Office of Legacy Management -- Sylvania Corning Plant - NY 19  

Office of Legacy Management (LM)

Plant - NY 19 Plant - NY 19 FUSRAP Considered Sites Sylvania-Corning, NY Alternate Name(s): Sylvania Electric Products, Inc. Sylvania Corp. NY.19-1 NY.19-4 Location: Cantiaque Road, Hicksville, Long Island, New York NY.19-5 Historical Operations: Pilot-scale production of powdered metal uranium slugs for AEC's Hanford reactor. NY.19-4 Eligibility Determination: Eligible Radiological Survey(s): Assessment Survey NY.19-3 Site Status: Cleanup in progress by U.S. Army Corps of Engineers. USACE Website Long-term Care Requirements: To be determined upon completion. Also see Documents Related to Sylvania-Corning, NY Historical documents may contain links which are no longer valid or to outside sources. LM can not attest to the accuracy of information provided by these links. Please see the Leaving LM Website page for more details.

46

DOE - Office of Legacy Management -- Staten Island Warehouse - NY 22  

Office of Legacy Management (LM)

Staten Island Warehouse - NY 22 Staten Island Warehouse - NY 22 FUSRAP Considered Sites Staten Island Warehouse, NY Alternate Name(s): Archer-Daniels Midland Company NY.22-3 Location: 2393 Richmond Terrace, Port Richmond, New York NY.22-2 Historical Operations: Stored pitchblende (high-grade uranium ore), which was purchased by the MED for the first atomic bomb. NY.22-3 Eligibility Determination: Eligible Radiological Survey(s): Assessment Survey NY.22-5 Site Status: Referred by DOE, evaluation in progess by U.S. Army Corps of Engineers. USACE Website Long-term Care Requirements: To be determined upon completion. Also see Documents Related to Staten Island Warehouse, NY NY.22-1 - MED Trip Report Summary; Authors: Ruhoff (Corps of Engineers) and Geddes (Stone & Webster); Subject: Trip to New York;

47

DOE - Office of Legacy Management -- American Railway Express Office - NY  

Office of Legacy Management (LM)

Railway Express Office - Railway Express Office - NY 0-03 FUSRAP Considered Sites Site: American Railway Express Office (NY.0-03 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: American Railway Express (Downtown) , New York , New York NY.0-03-1 Evaluation Year: 1987 NY.0-03-1 Site Operations: None - Involved with a fire during transport of uranium scrap. NY.0-03-2 Site Disposition: Eliminated - Potential for contamination remote NY.0-03-1 NY.0-03-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium scrap NY.0-03-2 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP NY.0-03-1 Also see Documents Related to American Railway Express Office

48

DOE - Office of Legacy Management -- Ledoux and Co - NY 37  

NLE Websites -- All DOE Office Websites (Extended Search)

Ledoux and Co - NY 37 Ledoux and Co - NY 37 FUSRAP Considered Sites Site: LEDOUX AND CO. (NY.37 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 155 Avenue of the Americas , New York , New York NY.37-1 Evaluation Year: 1987 NY.37-1 Site Operations: Prime contractor to AEC, African Metals. LeDoux handled radioactive materials under this contract at other locations; records indicate that radioactive materials were not sent to the New York office. NY.37-1 Site Disposition: Eliminated - Potential for contamination considered remote - Radioactive materials were not handled NY.37-2 NY.37-3 Radioactive Materials Handled: No NY.37-2 Primary Radioactive Materials Handled: None Radiological Survey(s): None Indicated

49

DOE - Office of Legacy Management -- Polytechnic Institute of Brooklyn - NY  

Office of Legacy Management (LM)

Polytechnic Institute of Brooklyn - Polytechnic Institute of Brooklyn - NY 0-19 FUSRAP Considered Sites Site: NY.0-19 (POLYTECHNIC INSTITUTE OF BROOKLYN) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: New York , New York NY.0-19-1 Evaluation Year: 1987 NY.0-19-1 Site Operations: Research and development involving only small quantities of radiological material in a controlled environment. NY.0-19-1 Site Disposition: Eliminated - Potential for contamination remote NY.0-19-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Not specified NY.0-19-1 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to NY.0-19 NY.0-19-1 - Aerospace Letter; Young to Wallo; Subject: Elimination

50

US MidAtl NY Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

MidAtl NY MidAtl NY Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 $3,000 US MidAtl NY Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 2,000 4,000 6,000 8,000 10,000 12,000 US MidAtl NY Site Consumption kilowatthours $0 $250 $500 $750 $1,000 $1,250 $1,500 US MidAtl NY Expenditures dollars ELECTRICITY ONLY average per household * New York households consume an average of 103 million Btu per year, 15% more than the U.S. average. * Electricity consumption in New York homes is much lower than the U.S. average, because many households use other fuels for major energy end uses like space heating, water heating, and cooking. Electricity costs are closer to the national average due to higher than average electricity prices in the state.

51

US MidAtl NY Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

MidAtl NY MidAtl NY Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 $3,000 US MidAtl NY Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 2,000 4,000 6,000 8,000 10,000 12,000 US MidAtl NY Site Consumption kilowatthours $0 $250 $500 $750 $1,000 $1,250 $1,500 US MidAtl NY Expenditures dollars ELECTRICITY ONLY average per household * New York households consume an average of 103 million Btu per year, 15% more than the U.S. average. * Electricity consumption in New York homes is much lower than the U.S. average, because many households use other fuels for major energy end uses like space heating, water heating, and cooking. Electricity costs are closer to the national average due to higher than average electricity prices in the state.

52

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

WWNA Monthly; Largo, FL WWNA Monthly; Largo, FL 7031-226 Accutest Job Number: F36361 Sampling Date: 11/03/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

53

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

Quarterly Sampling, STAR Center, Largo, FL Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F33211 Sampling Dates: 07/13/05 - 07/14/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

54

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

Quarterly Sampling, STAR Center, Largo, FL Quarterly Sampling, STAR Center, Largo, FL 7030-226 Accutest Job Number: F27229 Sampling Date: 10/07/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

55

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

WWNA Monthly; Largo, FL WWNA Monthly; Largo, FL 110406202 Accutest Job Number: F25982 Sampling Date: 08/10/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

56

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

WWNA Monthly; Largo, FL WWNA Monthly; Largo, FL 7030-226 Accutest Job Number: F33038 Sampling Date: 07/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

57

DOE - Office of Legacy Management -- Sacandaga - NY 51  

Office of Legacy Management (LM)

York NY.51-1 Evaluation Year: 1992 NY.51-2 Site Operations: Plant operated by General Electric during period spanning 1947 to 1951. Facilities housed studies involving radar,...

58

Geothermal energy and district heating in Ny-lesund, Svalbard .  

E-Print Network (OSTI)

??This thesis presents the possibilities for using shallow geothermal energy for heating purposes in Ny-lesund. The current energy supply in Ny-lesund is a diesel generator, (more)

Iversen, Julianne

2013-01-01T23:59:59.000Z

59

DOE - Office of Legacy Management -- ACF Industries Inc - NY...  

Office of Legacy Management (LM)

Evaluation Year: 1987 NY.13-1 Site Operations: Procured, produced, and delivered mechanical and cryogenic weapons components. No radioactive materials used at the site. NY.13-2...

60

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

2/04 2/04 Technical Report for S M Stoller Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F25409 Sampling Dates: 07/13/04 - 07/14/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

0/06 0/06 Technical Report for S M Stoller Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F39137 Sampling Dates: 03/08/06 - 03/09/06 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

62

DOE - Office of Legacy Management -- Linde Air Products Division - NY 08  

NLE Websites -- All DOE Office Websites (Extended Search)

Division - NY 08 Division - NY 08 FUSRAP Considered Sites Linde Air Products Division - Towanda, NY Alternate Name(s): Praxair Linde Aire Products Div. of Union Carbide Corp. Linde Ceramics Plant Uranium Refinery, Linde Site NY.08-4 Location: East Park Drive and Woodward, Tonawanda, New York NY.08-5 Historical Operations: Processed uranium compounds for MED and AEC. Includes Towanda Landfill as a VP. NY.08-1 NY.08-2 Eligibility Determination: Eligible NY.08-9 Radiological Survey(s): Assessment Surveys NY.08-3 NY.08-5 NY.08-6 NY.08-7 Site Status: Cleanup in progress by U.S. Army Corps of Engineers. NY.08-8 USACE Website Long-term Care Requirements: To be determined upon completion. Also see Linde FUSRAP Site Documents Related to Linde Air Products Division - Towanda, NY

63

FUPWG Meeting Agenda - Cape Canaveral, FL | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Cape Canaveral, FL Cape Canaveral, FL FUPWG Meeting Agenda - Cape Canaveral, FL October 7, 2013 - 3:00pm Addthis FUPWG Spring 2007 - Cocoa Beach, FL: Launching a New Era of Energy Efficiency" Hosted by: Florida Power and Light Company logo FEMP logo May 1-2, 2007 Hosted by Florida Power and Light Company Monday, April 30, 2007 5:00 - 6:30 Steering Committee meeting at Skylab/Atlas Conference Room, Doubletree Hotel 6:30 until... Networking dinner at 3 Wishes Restaurant, Doubletree Hotel Tuesday, May 1, 2007 7:45 - 8:30 Registration/Continental Breakfast 8:30 - 8:45 Florida Power & Light Welcome Marlene Santos, FPL Vice President of Customer Service 8:45 - 9:00 FEMP Welcome David McAndrew, FEMP 9:00 - 9:30 Washington Update David McAndrew, FEMP National Defense 2007 Authorization

64

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

7170 7170 Sampling Date: 10/05/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 12 1 of 12

65

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

227 227 Sampling Dates: 03/31/04 - 04/01/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report

66

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

124 124 Sampling Date: 01/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 18 1 of 18

67

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

531 531 Sampling Date: 04/16/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 21 1 of 21

68

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

8014 8014 Sampling Date: 11/09/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 12 1 of 12

69

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

623 Sampling Date: 020205 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ...

70

City of Quincy, FL Smart Grid Project | Open Energy Information  

Open Energy Info (EERE)

FL Smart Grid Project FL Smart Grid Project Jump to: navigation, search Project Lead City of Quincy, FL Country United States Headquarters Location Quincy, Florida Recovery Act Funding $2,471,041.00 Total Project Value $4,942,082.00 Coverage Area Coverage Map: City of Quincy, FL Smart Grid Project Coordinates 30.5871392°, -84.5832453° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[]}

71

NlZWYORK4,N.Y.  

Office of Legacy Management (LM)

AFRICAN .METALS~ C~RPO~~XON AFRICAN .METALS~ C~RPO~~XON 41 BROAD STREET . i. ,,J iI: : LE OCT 2 2 1945 NlZWYORK4,N.Y. :October 5, 1945. Af-2-a L.: I.__: '../ . ._ The Area Engineer, U.S. Engineer Office, P.O. BOX 42, Station F., New York 16, N.Y. Gentlemen: Contract W-7405 eng-4. Reference is made to your letter EIDM A-33 MS of August 27th, 1945. Contract W-7405 eng-4 called for the delivery of 100 T of M-31, the M308 content of which was sold to you, whereas we reserved all rights to the R-l contained therein. We hereby certify that the liability of the Gouvernment in connection with the M308 contained--has .3*,., been completely fulfilled, and that the R-l%ontained has been returned to us in accordance with separate contract entered into between this Corporation and the Eldorado

72

DOE - Office of Legacy Management -- Naval Supply Depot AEC Warehouse - NY  

Office of Legacy Management (LM)

Supply Depot AEC Warehouse - Supply Depot AEC Warehouse - NY 36 FUSRAP Considered Sites Site: NAVAL SUPPLY DEPOT, AEC WAREHOUSE (NY.36) Eliminated from further consideration under FUSRAP - Referred to DOD Designated Name: Not Designated Alternate Name: None Location: Building 546 , Scotia , New York NY.36-1 Evaluation Year: 1987 NY.36-1 Site Operations: This facility served as a storage and transshipment point for feed materials between the Hanford and commercial metal fabricators in the northeastern states. NY.36-1 NY.36-2 NY.36-3 Site Disposition: Eliminated - Referred to DOD NY.36-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium, Thorium Metals NY.36-1 NY.36-2 NY.36-3 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP - Referred to DOD NY.36-1

73

Northern Westchester Energy Action Consortium (NY) | Open Energy  

Open Energy Info (EERE)

Energy Action Consortium (NY) Energy Action Consortium (NY) Jump to: navigation, search Logo: Northern Westchester Energy Action Consortium (NY) Name Northern Westchester Energy Action Consortium (NY) Address PO Box 681 Place Somers, New York Zip 10589 Region Northeast - NY NJ CT PA Area Year founded 2009 Website http://www.nweac.org Coordinates 41.3278772°, -73.6948234° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.3278772,"lon":-73.6948234,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

74

Property:EIA/861/IsoNy | Open Energy Information  

Open Energy Info (EERE)

IsoNy IsoNy Jump to: navigation, search Property Name ISO_NY Property Type Boolean Description Indicates that the organization conducts operations in the NY ISO region [1] References ↑ "EIA Form EIA-861 Final Data File for 2010 - 861 Webfile Layout for 2010.doc" Pages using the property "EIA/861/IsoNy" Showing 25 pages using this property. (previous 25) (next 25) A AES Eastern Energy LP + true + AP Holdings LLC + true + Agway Energy Services, LLC + true + B Bath Electric Gas & Water Sys + true + Bluerock Energy, Inc. + true + C Central Hudson Gas & Elec Corp + true + City of Salamanca, New York (Utility Company) + true + City of Sherrill, New York (Utility Company) + true + City of Watertown, New York (Utility Company) + true +

75

DOE - Office of Legacy Management -- Tonawanda North Units 1 and 2 - NY 10  

NLE Websites -- All DOE Office Websites (Extended Search)

Tonawanda North Units 1 and 2 - NY Tonawanda North Units 1 and 2 - NY 10 FUSRAP Considered Sites Tonawanda North, NY, Units 1 and 2 Alternate Name(s): Ashland #1 and Ashland #2 Haist Property Seaway Area D Rattlesnake Creek NY.10-1 Location: State Highway 266, east of Interstate Highway 190, Tonawanda, NY NY.10-4 Historical Operations: Served as a repository for refined uranium and vanadium residues containing thorium and radium, generated by Linde Air Products. NY.10-4 NY.10-5 NY.10-6 NY.10-7 NY.10-9 Eligibility Determination: Eligible NY.10-1 NY.10-2 NY.10-3 Radiological Survey(s): Assessment Survey NY.10-4 Site Status: Certified - Certification Basis, Declaration of Completion Included NY.10-11 NY.10-13 NY.10-14 Long-term Care Requirements: Long-Term Surveillance and Maintenance Requirements for Remediated FUSRAP Sites S07566_FUSRAP

76

DOE - Office of Legacy Management -- Ithaca Gun Co Inc - NY 53  

Office of Legacy Management (LM)

Ithaca Gun Co Inc - NY 53 FUSRAP Considered Sites Site: ITHACA GUN CO., INC. (NY.53 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate...

77

Price of Champlain, NY Natural Gas LNG Imports from Canada (Dollars...  

Gasoline and Diesel Fuel Update (EIA)

Champlain, NY Natural Gas LNG Imports from Canada (Dollars per Thousand Cubic Feet) Price of Champlain, NY Natural Gas LNG Imports from Canada (Dollars per Thousand Cubic Feet)...

78

DOE - Office of Legacy Management -- Radium Chemical Co Inc - NY 60  

NLE Websites -- All DOE Office Websites (Extended Search)

Radium Chemical Co Inc - NY 60 Radium Chemical Co Inc - NY 60 FUSRAP Considered Sites Site: RADIUM CHEMICAL CO., INC (NY.60 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: New York , New York NY.60-1 Evaluation Year: 1987 NY.60-1 Site Operations: Commercial Producer of Radium. NY.60-1 Site Disposition: Eliminated - Commercial site - EPA cleanup project NY.60-1 Radioactive Materials Handled: Yes NY.60-1 Primary Radioactive Materials Handled: Radium NY.60-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP Also see Documents Related to RADIUM CHEMICAL CO., INC NY.60-1 - Memorandum; A. Wallo to the File; Subject: FUSRAP review and elimination of the Radium Chemical Co. site in New York, NY; November

79

DOE - Office of Legacy Management -- Simmons Machine and Tool Inc - NY 35  

NLE Websites -- All DOE Office Websites (Extended Search)

Simmons Machine and Tool Inc - NY Simmons Machine and Tool Inc - NY 35 FUSRAP Considered Sites Site: SIMMONS MACHINE AND TOOL, INC (NY.35) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 1000 North Broadway , Albany , New York NY.35-1 Evaluation Year: 1987 NY.35-2 Site Operations: Tested equipment and machined uranium to test the equipment (one time event). NY.35-1 NY.35-2 Site Disposition: Eliminated - Potential for contamination considered remote due to limited scope and duration of activity performed at the site NY.35-2 NY.35-3 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium NY.35-1 NY.35-2 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP

80

DOE - Office of Legacy Management -- Utica Street Warehouse - NY 0-23  

Office of Legacy Management (LM)

Street Warehouse - NY 0-23 Street Warehouse - NY 0-23 FUSRAP Considered Sites Site: UTICA STREET WAREHOUSE (NY.0-23) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 240 West Utica Street , Buffalo , New York NY.0-23-2 Evaluation Year: 1987 NY.0-23-1 Site Operations: Stored and rebarrelled uranium process residues from operations at Linde. NY.0-23-3 Site Disposition: Eliminated - Original building demolished. Current land use - Parking facility. Potential for residual radioactive contamination considered remote. NY.0-23-1 Radioactive Materials Handled: Yes NY.0-23-1 Primary Radioactive Materials Handled: Natural Uranium Process Residues NY.0-23-1 Radiological Survey(s): None Indicated NY.0-23-1 Site Status: Eliminated from consideration under FUSRAP NY.0-23-1

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

DOE - Office of Legacy Management -- Eastman Kodak Laboratory - NY 0-09  

Office of Legacy Management (LM)

Eastman Kodak Laboratory - NY 0-09 Eastman Kodak Laboratory - NY 0-09 FUSRAP Considered Sites Site: Eastman Kodak Laboratory (NY.0-09 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: Eastman Kodak Rochester Lab NY.0-09-1 Location: Rochester , New York NY.0-09-1 Evaluation Year: 1987 NY.0-09-1 NY.0-09-2 Site Operations: Research and development with natural uranium solutions in 1943. NY.0-09-1 Site Disposition: Eliminated - Potential for contamination remote NY.0-09-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium NY.0-09-1 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to Eastman Kodak Laboratory NY.0-09-1 - Memorandum/Checklist; Wallo to the File; Subject:

82

DOE - Office of Legacy Management -- Virginia-Carolina Chemical Corp - FL  

Office of Legacy Management (LM)

Virginia-Carolina Chemical Corp - Virginia-Carolina Chemical Corp - FL 06 FUSRAP Considered Sites Site: Virginia-Carolina Chemical Corp. (FL.06 ) Eliminated from consideration under FUSRAP - Referred to US EPA and State of Florida Designated Name: Not Designated Alternate Name: Conserv Corporation FL.06-1 Location: Nichols , Florida FL.06-2 Evaluation Year: 1985 FL.06-1 Site Operations: Process development studies and pilot plant testing of uranium recovery from phosphoric acid during the mid-1950s. Site Disposition: Eliminated - No Authority FL.06-1 FL.06-4 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium Radiological Survey(s): Yes FL.06-2 Site Status: Eliminated from consideration under FUSRAP - Referred to US EPA and State of Florida FL.06-1

83

DOE - Office of Legacy Management -- University of Miami - FL 0-01  

Office of Legacy Management (LM)

Miami - FL 0-01 Miami - FL 0-01 FUSRAP Considered Sites Site: UNIVERSITY OF MIAMI (FL.0-01 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Miami , Florida FL.0-01-1 Evaluation Year: 1987 FL.0-01-1 Site Operations: Research. FL.0-01-1 Site Disposition: Eliminated - Potential for contamination considered remote based on nature of the operations FL.0-01-1 Radioactive Materials Handled: None Indicated Primary Radioactive Materials Handled: None Indicated FL.0-01-1 Radiological Survey(s): No Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to UNIVERSITY OF MIAMI FL.0-01-1 - Aerospace Letter; Young to Wallo; Subject: Elimination Recommendation -- Colleges and Universities; September 23, 1987

84

ANNUAL FIRE SAFETY REPORT 2013 Ithaca, NY Campus  

E-Print Network (OSTI)

related services including programs in: · Fire Protection, Emergency Services, Emergency Management o Fire Protection Systems and Equipment o University Fire Marshal o Emergency Management o Events Management oANNUAL FIRE SAFETY REPORT 2013 Ithaca, NY Campus http

Chen, Tsuhan

85

ANNUAL FIRE SAFETY REPORT 2012 Ithaca, NY Campus  

E-Print Network (OSTI)

: · Fire Protection, Emergency Services, Emergency Management o Fire Protection Systems and Equipment oANNUAL FIRE SAFETY REPORT 2012 Ithaca, NY Campus http Annual Fire Safety Report 2012 Page 2 From the Department of Environmental Health and Safety (EH

Chen, Tsuhan

86

Massena, NY Natural Gas Pipeline Imports From Canada (Million...  

Gasoline and Diesel Fuel Update (EIA)

data. Release Date: 1302015 Next Release Date: 2272015 Referring Pages: U.S. Natural Gas Pipeline Imports by Point of Entry Massena, NY Natural Gas Imports by Pipeline from...

87

Champlain, NY Natural Gas Pipeline Imports From Canada (Million...  

Annual Energy Outlook 2012 (EIA)

data. Release Date: 1302015 Next Release Date: 2272015 Referring Pages: U.S. Natural Gas Pipeline Imports by Point of Entry Champlain, NY Natural Gas Imports by Pipeline from...

88

Waddington, NY Natural Gas Pipeline Imports From Canada (Million...  

Annual Energy Outlook 2012 (EIA)

data. Release Date: 1302015 Next Release Date: 2272015 Referring Pages: U.S. Natural Gas Pipeline Imports by Point of Entry Waddington, NY Natural Gas Imports by Pipeline from...

89

FUPWG Meeting Agenda - Destin, FL | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Destin, FL Destin, FL FUPWG Meeting Agenda - Destin, FL October 7, 2013 - 2:56pm Addthis Going coastal for energy efficiency. FUPWG. April 15-16, 2008, Destin, Florida Gulf Power: A Southern Company FEMP logo April 15-16, 2008 Hosted by Gulf Power Monday, April 14, 2008 6:30 pm Steering Committee Meeting & Networking Dinner Ocean Club 8955 US Highway 98 W Miramar Beach, FL 32550 Tuesday, April 15, 2008 7:45 - 8:30 am Registration and Continental Breakfast 8:30 - 8:45 am Gulf Power Welcome P. Bernard Jacob, Customer Operations Vice President 8:45 - 9:15 am FEMP Welcome David McAndrew, FEMP 9:15 - 10:00 am Washington Update David McAndrew, FEMP 10:00 - 10:30 am Technology Update Paul Kistler 10:30 - 11:00 am Networking Break & New Member Mentor Introductions 11:00 - 11:30 am Gulf Power Success Story - NAS Chiller Replacement

90

The Florida State University Panama City, FL 32405-1099  

E-Print Network (OSTI)

The Florida State University Panama City, FL 32405-1099 Office of Student Affairs · 4750 Collegiate their October 3, 2005 MEMORANDUM TO: Faculty and Students, Panama City FROM: Melissa A. Jones, Director, Office of Student Affairs, Panama City RE: Special Instructions for Panama City Campus pertaining to the FSU

91

DOE - Office of Legacy Management -- Allegheny-Ludlum Steel Corp - NY 0-02  

Office of Legacy Management (LM)

Allegheny-Ludlum Steel Corp - NY Allegheny-Ludlum Steel Corp - NY 0-02 FUSRAP Considered Sites Site: ALLEGHENY-LUDLUM STEEL CORP. (NY.0-02 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: Al-Tech Specialty Steel NY.0-02-1 Location: Watervliet and Dunkirk , New York NY.0-02-1 Evaluation Year: 1985 NY.0-02-2 Site Operations: Processed uranium metal for the AEC in the early 1950s; rolled uranium billets into rods. NY.0-02-3 Site Disposition: Eliminated - Potential for contamination remote - Confirmed by radiological survey NY.0-02-3 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium Metal NY.0-02-3 Radiological Survey(s): Yes NY.0-02-4 Site Status: Eliminated from consideration under FUSRAP Also see

92

DOE - Office of Legacy Management -- Lucius Pitkin - NY 0-15  

Office of Legacy Management (LM)

Lucius Pitkin - NY 0-15 Lucius Pitkin - NY 0-15 FUSRAP Considered Sites Site: Lucius Pitkin (NY.0-15 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 47 Fulton Street , New York , New York NY.0-15-1 Evaluation Year: 1987 NY.0-15-1 Site Operations: No MED or AED work done at this site. Contractor supervised activities at Middlesex Sampling Plant in Middlesex, NJ such as assaying, sampling and weighing of ore. NY.0-15-1 NY.0-15-2 Site Disposition: Eliminated - No radioactive material handled at this site NY.0-15-1 Radioactive Materials Handled: No Primary Radioactive Materials Handled: None NY.0-15-1 NY.0-15-2 Radiological Survey(s): No Site Status: Eliminated from consideration under FUSRAP Also see

93

DOE - Office of Legacy Management -- American Machine and Foundry Co - NY  

NLE Websites -- All DOE Office Websites (Extended Search)

Machine and Foundry Co - Machine and Foundry Co - NY 26 FUSRAP Considered Sites Site: American Machine and Foundry Co ( NY.26 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: Lutheran Medical Center NY.26-1 Location: Second Avenue and 56th Street , Brooklyn , New York NY.26-2 Evaluation Year: 1992 NY.26-1 Site Operations: 1951 - 1954 conducted metal fabrication operation on uranium and thorium metals. NY.26-3 NY.26-4 Site Disposition: Eliminated - Potential for contamination considered remote based on results of radiological monitoring and sampling and extensive renovation of the site NY.26-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium and Thorium metal NY.26-1 Radiological Survey(s): Yes NY.26-5

94

DOE - Office of Legacy Management -- Union Mines Development Corp - NY 0-22  

Office of Legacy Management (LM)

Mines Development Corp - NY Mines Development Corp - NY 0-22 FUSRAP Considered Sites Site: UNION MINES DEVELOPMENT CORP. (NY.0-22) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: Union Carbide NY.0-22-1 Location: New York , New York NY.0-22-1 Evaluation Year: 1987 NY.0-22-1 Site Operations: The company owned uranium mines or reserves located in the western U.S. NY.0-22-1 Site Disposition: Eliminated - No reason to believe radioactive material was used at this site NY.0-22-1 Radioactive Materials Handled: None Indicated Primary Radioactive Materials Handled: None Indicated NY.0-22-1 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to UNION MINES DEVELOPMENT CORP.

95

DOE - Office of Legacy Management -- Fordham University - NY 0-12  

Office of Legacy Management (LM)

Fordham University - NY 0-12 Fordham University - NY 0-12 FUSRAP Considered Sites Site: Fordham University (NY.0-12 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: New York , New York NY.0-12-1 Evaluation Year: 1987 NY.0-12-1 Site Operations: Research and development involving small quantities of radioactive material in a controlled environment NY.0-12-1 Site Disposition: Eliminated - Potential for contamination remote NY.0-12-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Not Specified NY.0-12-1 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to Fordham University NY.0-12-1 - Aerospace Letter; Young to Wallo; Subject: Elimination

96

DOE - Office of Legacy Management -- Floyd Bennett Field - NY 0-11  

Office of Legacy Management (LM)

Floyd Bennett Field - NY 0-11 Floyd Bennett Field - NY 0-11 FUSRAP Considered Sites Site: Floyd Bennett Field (NY.0-11 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: Naval Air Station NY.0-11-1 Location: Buildings 67 and 69 , Brooklyn , New York NY.0-11-1 Evaluation Year: 1987 NY.0-11-1 Site Operations: The Air station was considered by the AEC but was not used. NY.0-11-1 Site Disposition: Eliminated - No involvement with MED/AEC operations NY.0-11-1 Radioactive Materials Handled: No Primary Radioactive Materials Handled: None Radiological Survey(s): No Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to Floyd Bennett Field NY.0-11-1 - Memorandum/Checklist; Wallo to the File; Subject: Elimination of Floyd Bennett Field; December 7, 1987

97

DOE - Office of Legacy Management -- Wolff-Alport and Co - NY 30  

Office of Legacy Management (LM)

Wolff-Alport and Co - NY 30 Wolff-Alport and Co - NY 30 FUSRAP Considered Sites Site: Wolff-Alport and Co (NY.30) Eliminated from consideration under FUSRAP - Referred to US EPA Region II and New York City Department of Health Designated Name: Not Designated Alternate Name: None Location: 1127 Irving Avenue , Brooklyn , New York NY.30-1 Evaluation Year: 1987 NY.30-1 Site Operations: Commercial operation -- sold thorium residues to the AEC, which in turn shipped the residues to Maywood for storage. NY.30-2 Site Disposition: Eliminated - No Authority NY.30-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Thorium NY.30-2 Radiological Survey(s): No Site Status: Eliminated from consideration under FUSRAP - Referred to US EPA Region II and New York City Department of Health NY.30-1

98

DOE - Office of Legacy Management -- Frederick Flader Inc - NY 0-13  

NLE Websites -- All DOE Office Websites (Extended Search)

Frederick Flader Inc - NY 0-13 Frederick Flader Inc - NY 0-13 FUSRAP Considered Sites Site: Frederick Flader, Inc. (NY.0-13 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: Frederick Flader Division of Eaton Manufacturing Co. NY.0-13-1 Location: 583 Division Street , N. Tonawanda , New York NY.0-13-1 Evaluation Year: 1987 NY.0-13-1 Site Operations: Provided consulting services and supported development of auxiliary equipment related to nuclear power NY.0-13-1 Site Disposition: Eliminated NY.0-13-1 Radioactive Materials Handled: None Indicated Primary Radioactive Materials Handled: None Indicated NY.0-13-1 Radiological Survey(s): No Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to Frederick Flader, Inc.

99

TRIBAL ISSUES TOPIC GROUP MEETING SUMMARY JACKSONVILLE, FL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

JACKSONVILLE, FL JACKSONVILLE, FL JANUARY 20, 1999 Mr. Kevin Blackwell (USDOT/FRA) updated the group on the status of the DOT response to DOE's inquiry about the tribal right to inspect rail shipments. The response was in the final stages of review in the General Counsel's office and is expected by July 1999. The Group has added a representative from the NRC General Counsel's office, as a topic group member, to help keep abreast of developments in the NRC's upcoming draft rulemaking regarding tribes and advanced notification. The group also discussed the research that has been conducted on the issue of developing a "umbrella grant" from DOE to states and tribes. Tribes concerns differ from State concerns because of disparities in available infrastructure to administer grants and funding equity issues.

100

RECIPIENT:Town of Brookhaven STATE: NY PROJECT  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Town of Brookhaven STATE: NY Town of Brookhaven STATE: NY PROJECT EECBG (S) - Brookhaven (NY): Henrietta Acampora Recreation Center TITLE: Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number DE-FOA-0000013 DE-EE0000688 GFO-0000688-002 Based on my review of the information concerning tbe proposed action, as NEPA Compliance Officer (autborized under DOE Order 4St.tA), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: 85.1 Actions to conserve energy. demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Consolidated Edison Co-NY Inc | Open Energy Information  

Open Energy Info (EERE)

NY Inc NY Inc Jump to: navigation, search Name Consolidated Edison Co-NY Inc Place New York, New York Service Territory New York Website www.coned.com Green Button Reference Page www.whitehouse.gov/sites/ Green Button Committed Yes Utility Id 4226 Utility Location Yes Ownership I NERC Location NPCC NERC NPCC Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Wholesale Marketing Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] Energy Information Administration Form 826[2] SGIC[3] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Consolidated Edison Company of New York, Inc. Smart Grid Demonstration

102

DOE - Office of Legacy Management -- Wilson Warehouse - NY 64  

Office of Legacy Management (LM)

Wilson Warehouse - NY 64 Wilson Warehouse - NY 64 FUSRAP Considered Sites Site: Wilson Warehouse (NY.64) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: This site is one of a group of 77 FUSRAP considered sites for which few, if any records are available in their respective site files to provide an historical account of past operations and their relationship, if any, with MED/AEC operations. Reviews of contact lists, accountable station lists, health and safety records and other documentation of the period do not provide sufficient information to warrant further search of historical records for information on these sites. These site files remain "open" to

103

DOE - Office of Legacy Management -- Pfohl Brothers Landfill - NY 66  

Office of Legacy Management (LM)

Pfohl Brothers Landfill - NY 66 Pfohl Brothers Landfill - NY 66 FUSRAP Considered Sites Site: Pfohl Brothers Landfill (NY.66 ) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: Also see Five-Year Review Report Pfohl Brothers Landfill Superfund Site Erie County Town of Cheektowaga, New York EPA REGION 2 Congressional District(s): 30 Erie Cheektowaga NPL LISTING HISTORY Documents Related to Pfohl Brothers Landfill Historical documents may contain links which are no longer valid or to outside sources. LM can not attest to the accuracy of information provided by these links. Please see the Leaving LM Website page for more details.

104

Consolidated Edison Co-NY Inc | Open Energy Information  

Open Energy Info (EERE)

Consolidated Edison Co-NY Inc Consolidated Edison Co-NY Inc (Redirected from ConEdison) Jump to: navigation, search Name Consolidated Edison Co-NY Inc Place New York, New York Service Territory New York Website www.coned.com Green Button Landing Page www.coned.com/customercen Green Button Reference Page www.whitehouse.gov/blog/2 Green Button Implemented Yes Utility Id 4226 Utility Location Yes Ownership I NERC Location NPCC NERC NPCC Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Wholesale Marketing Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] Energy Information Administration Form 826[2] SGIC[3] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now!

105

Business Council of Westchester County (NY) | Open Energy Information  

Open Energy Info (EERE)

of Westchester County (NY) of Westchester County (NY) Jump to: navigation, search Name Business Council of Westchester County (NY) Address 108 Corporate Park Drive, Suite 101 Place White Plains, New York Zip 10604 Sector Services Product Green Power Marketer Website http://www.westchesterny.org/ Coordinates 41.0200884°, -73.7206631° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.0200884,"lon":-73.7206631,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

106

DOE - Office of Legacy Management -- Linde Air Products Div - Buffalo - NY  

Office of Legacy Management (LM)

Linde Air Products Div - Buffalo - Linde Air Products Div - Buffalo - NY 65 FUSRAP Considered Sites Site: LINDE AIR PRODUCTS DIV. BUFFALO (NY.65 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: Linde Chandler Street Plant NY.65-1 Location: Buffalo , New York NY.65-1 Evaluation Year: 1987 NY.65-1 Site Operations: Developed and produced non-radioactive material for the Oak Ridge Gaseous Diffusion Plant under contract with the AEC. NY.65-2 Site Disposition: Eliminated - No indication that radioactive materials were used at the site NY.65-3 Radioactive Materials Handled: No NY.65-1 Primary Radioactive Materials Handled: None Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP

107

DOE - Office of Legacy Management -- Long Island College of Medicine - NY  

Office of Legacy Management (LM)

Long Island College of Medicine - Long Island College of Medicine - NY 0-14 FUSRAP Considered Sites Site: Long Island College of Medicine (NY.0-14 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: New York , New York NY.0-14-1 Evaluation Year: 1987 NY.0-14-1 Site Operations: Performed research utilizing small quantities of radioactive materials in a controlled environment. NY.0-14-1 Site Disposition: Eliminated - Potential for contamination remote NY.0-14-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Not Specified NY.0-14-1 Radiological Survey(s): None Indicated NY.0-14-1 Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to Long Island College of Medicine

108

DOE - Office of Legacy Management -- Colorado Fuel and Iron - NY 0-08  

Office of Legacy Management (LM)

Fuel and Iron - NY 0-08 Fuel and Iron - NY 0-08 FUSRAP Considered Sites Site: Colorado Fuel and Iron (NY.0-08 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Watervliet , New York NY.0-08-1 Evaluation Year: 1987 NY.0-08-1 Site Operations: Site was a contractor to DuPont. Exact nature of operations is not clear. No records to indicate that radioactive materials were handled at the site. NY.0-08-1 Site Disposition: Eliminated NY.0-08-1 Radioactive Materials Handled: None Indicated Primary Radioactive Materials Handled: None Indicated Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to Colorado Fuel and Iron NY.0-08-1 - DOE Memorandum/Checklist; S.Jones to the File; Subject:

109

Interoperability of Demand Response Resources Demonstration in NY  

SciTech Connect

The Interoperability of Demand Response Resources Demonstration in NY (Interoperability Project) was awarded to Con Edison in 2009. The objective of the project was to develop and demonstrate methodologies to enhance the ability of customer sited Demand Response resources to integrate more effectively with electric delivery companies and regional transmission organizations.

Wellington, Andre

2014-03-31T23:59:59.000Z

110

203 Day Hall Ithaca, NY 14853-2602  

E-Print Network (OSTI)

203 Day Hall Ithaca, NY 14853-2602 Page 1 of 2 WILLIAM D. FORD FEDERAL DIRECT LOAN APPLICATION Form F4 BEFORE YOU BEGIN The Direct Loan Program makes federal loan funds available to students directly is not an additional loan source; it replaced the Federal Stafford and SLS Loan programs at Cornell. APPLICATION

Keinan, Alon

111

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

B100 Monthly/Effluent; Largo, FL B100 Monthly/Effluent; Largo, FL 7030-226 Accutest Job Number: F30882 Sampling Date: 04/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

112

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

B100 Monthly/Effluent; Largo, FL B100 Monthly/Effluent; Largo, FL 7030-226 Accutest Job Number: F29123 Sampling Date: 01/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

113

S M Stoller STAR Center- 4.5 Acre Site, Largo, FL  

Office of Legacy Management (LM)

STAR Center- 4.5 Acre Site, Largo, FL STAR Center- 4.5 Acre Site, Largo, FL 110406202 Accutest Job Number: F25243 Sampling Date: 07/06/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

114

S M Stoller STAR Center- 4.5 Acre Site, Largo, FL  

Office of Legacy Management (LM)

STAR Center- 4.5 Acre Site, Largo, FL STAR Center- 4.5 Acre Site, Largo, FL 7030-226/Monthly Accutest Job Number: F27168 Sampling Date: 10/05/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

115

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

B100 Monthly/Effluent; Largo, FL B100 Monthly/Effluent; Largo, FL 7031-226 Accutest Job Number: F35493 Sampling Date: 10/04/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

116

S M Stoller STAR Center- 4.5 Acre Site, Largo, FL  

Office of Legacy Management (LM)

STAR Center- 4.5 Acre Site, Largo, FL STAR Center- 4.5 Acre Site, Largo, FL 110406202 Accutest Job Number: F23552 Sampling Date: 04/20/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

117

E-Print Network 3.0 - aurigae fl lyrae Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Search Sample search results for: aurigae fl lyrae Page: << < 1 2 3 4 5 > >> 1 Astronomy C Tiger Invitational February 20, 2010 Summary: Astronomy C Tiger Invitational...

118

Assessment of Summer RBOB Supply for NY & CT  

Gasoline and Diesel Fuel Update (EIA)

Update of Summer Reformulated Gasoline Supply Update of Summer Reformulated Gasoline Supply Assessment for New York and Connecticut May 5, 2004 In October 2003, EIA published a review of the status of the methyl tertiary butyl ether (MTBE) ban transition in New York (NY) and Connecticut (CT) 1 that noted significant uncertainties in gasoline supply for those States for the summer of 2004. To obtain updated information, EIA spoke to major suppliers to the two States over the past several months as the petroleum industry began the switch from winter- to summer-grade gasoline. As discussed on our earlier report, the NY and CT bans on MTBE mainly affect reformulated gasoline (RFG), which in recent years has been provided by domestic refineries on the East Coast (PADD 1) and imports. Our recent findings indicate that

119

J25097-1 Fl_L2 Final Report  

Office of Legacy Management (LM)

5097-1 5097-1 Job Description: Star Center For: S.M. Stoller Corporation 2597 B 3/4 Road Grand Junction, CO 81503 Attention: Mr. Charles Tabor _____________________________________________ Nancy Robertson Project Manager II nancy.robertson@testamericainc.com 09/19/2008 Methods: FDEP, DOH Certification #: E84282, E81005, E81010 These test results meet all the requirements of NELAC unless specified in the case narrative. All questions regarding this test report should be directed to the TestAmerica Project Manager who signed this test report. The estimated uncertainty associated with these reported results is available upon request. The results contained in this test report relate only to these samples included herein. TestAmerica Laboratories, Inc. TestAmerica Tampa 6712 Benjamin Road, Suite 100, Tampa, FL 33634

120

Mechanism of Nitric Oxide Reactivity and Fluorescence Enhancement of the NO-Specific Probe CuFL1  

E-Print Network (OSTI)

The mechanism of the reaction of CuFL1 (FL1 = 2-{2-chloro-6-hydroxy-5-[(2-methylquinolin-8-ylamino)methyl]-3-oxo-3H-xanthen-9-yl}benzoic acid) with nitric oxide (NO) to form the N-nitrosated product FL1-NO in buffered ...

McQuade, Lindsey E.

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

BuildSmart NY Innovators Summit Offers Sneak Peek at Better Buildings...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

prisons, mental health hospitals, office buildings, and facilities that house its trains, buses, and equipment. The New York Power Authority's BuildSmart NY program is...

122

CUT FLOWER VARIETY TRIALS, ITHACA, NY, 2005 H. C. Wien, Department of Horticulture, Cornell University  

E-Print Network (OSTI)

CUT FLOWER VARIETY TRIALS, ITHACA, NY, 2005 H. C. Wien, Department of Horticulture, Cornell is somewhat transparent to infrared radiation, but prevents transmission of visible light, and thus

Pawlowski, Wojtek

123

E-Print Network 3.0 - area ny hovedflyplass Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Costs and Benefits of Summary: . Conclusions and Areas for Improvement 12;Environmental Energy Technologies Division Energy Analysis... AZ: 15% by 2025 NY: 24% by 2013 CO: 10%...

124

International Journal of Foundations of Computer Science fl World Scientific Publishing Company  

E-Print Network (OSTI)

International Journal of Foundations of Computer Science c fl World Scientific Publishing Company Science, University of Idaho Moscow, Idaho 83844­1010, USA and MOSHE DROR MIS Department, University

Krings, Axel W.

125

Renewable Energy Network of Entrepreneurs in Western New York RENEW NY |  

Open Energy Info (EERE)

Network of Entrepreneurs in Western New York RENEW NY Network of Entrepreneurs in Western New York RENEW NY Jump to: navigation, search Name Renewable Energy Network of Entrepreneurs in Western New York (RENEW NY) Place Rochester, New York Zip 14623 Sector Renewable Energy Product US-based incubator fund, Renewable Energy Network of Entrepreneurs in Western New York, helps early stage renewable energy companies to start and grow in Western New York. References Renewable Energy Network of Entrepreneurs in Western New York (RENEW NY)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Renewable Energy Network of Entrepreneurs in Western New York (RENEW NY) is a company located in Rochester, New York . References ↑ "Renewable Energy Network of Entrepreneurs in Western New York

126

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

accomplishments accomplishments are impressive in themselves, and associ- ated with each milestone is the expansion of future produc- tion opportunities as another technical barrier is overcome. The extension of recovery opportunities into deep water has established the deep offshore as an area of considerable national significance. A second source of increased supply is gas from coalbed formations. Natural gas production from coalbed methane fields continued to grow in 1996 as projects initiated mainly in the early to mid 1990's matured through the dewatering phase into higher rates of gas production. Coalbed forma- tions contribute almost 1 trillion cubic feet, roughly 5 per- cent, to total U.S. production. Continued production growth from coalbeds is not likely in light of the precipitous drop in new wells completed in coalbed formations since the termination of the production tax

127

CUT FLOWER VARIETY TRIALS, ITHACA, NY, 2004 H. C. Wien, Department of Horticulture, Cornell University  

E-Print Network (OSTI)

CUT FLOWER VARIETY TRIALS, ITHACA, NY, 2004 H. C. Wien, Department of Horticulture, Cornell light and thus discourages weed growth underneath. In the rest of the field not covered by the high

Pawlowski, Wojtek

128

Integrys Energy Services of N.Y., Inc. | Open Energy Information  

Open Energy Info (EERE)

Services of N.Y., Inc. Services of N.Y., Inc. (Redirected from Integrys) Jump to: navigation, search Name Integrys Energy Services of N.Y., Inc. Place New York Utility Id 21258 Utility Location Yes Ownership R ISO NY Yes Activity Retail Marketing Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Residential: $0.0625/kWh Commercial: $0.0809/kWh Industrial: $0.0631/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Integrys_Energy_Services_of_N.Y.,_Inc.&oldid=410875

129

Contributors Marsha Berger, Courant Institute, New York University, New York, NY, USA  

E-Print Network (OSTI)

Contributors Marsha Berger, Courant Institute, New York University, New York, NY, USA Gyan Bhanot, Piscataway, NJ, USA Erik G. Boman, Discrete Algorithms and Mathematics Department, Sandia National Laboratories, Albuquerque, NM, USA Doruk Bozdag, Department of Biomedical Informatics, The Ohio State

Li, Xiaolin "Andy"

130

Sediment chemistries and chironomid deformities in the Buffalo River (NY)  

SciTech Connect

The authors examined the surficial sediment chemistry (heavy metals) and the frequency of chironomid (Diptera) larvae mouthpart deformities from multiple PONAR grabs samples at each of 20 sites along the Buffalo River (NY) area of concern (AOC). Because of the potential for patchy invertebrate distribution and high variance in sediment chemistry, repeated spatial and temporal sampling is important to obtain a better integrated picture of contamination in rivers. The findings suggest that the Buffalo River has one of the highest percentages of deformed chironomids in AOC`s of the Great Lakes basin. One river site that was traditionally thought to be a chemical hot spot was less contaminated than another downstream section. At another site, sediment concentrations for V., Mn and AS appeared to be strongly associated with the proximity of combined sewer overflows from a region which is primarily residential. Interestingly, a demonstration project of the US Army Corps of Engineers, during which three types of dredges were used to carefully remove upper sediments from two different short reaches along the river, seemed to have no significant impact on proximate sediment chemistries or biota.

Stewart, K.M.; Diggins, T.P. [State Univ. of New York, Buffalo, NY (United States). Dept. of Biological Science

1994-12-31T23:59:59.000Z

131

INTRODUCTION Since Zadeh [20] introduced Fuzzy Sets, many discussions have taken place whether Fuzzy Logic (FL) deserves a place  

E-Print Network (OSTI)

Fuzzy Logic (FL) deserves a place in control theory. Three properties speak in favour of FL control larger than the true maximal input for a system, Fuzzy Logic Controllers (FLC) by nature restrict A j x µ j x ( ) NLQ THEORY BASED STABILITY ANALYSIS OF SISO FUZZY LOGIC CONTROLLERS J?RGEN VAN GORP

132

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 314 WESTCOTT * TALLAHASSEE, FL. 32306-1410 Florida State University  

E-Print Network (OSTI)

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 314 WESTCOTT * TALLAHASSEE, FL. 32306 to gs-drg@admin.fsu.edu: Florida State University The Graduate School 314 Westcott Building Tallahassee be carried over. #12;THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 314 WESTCOTT * TALLAHASSEE, FL

133

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 408 WESTCOTT * TALLAHASSEE, FL. 32306-1410 Florida State University  

E-Print Network (OSTI)

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 408 WESTCOTT * TALLAHASSEE, FL. 32306 Fellowship ­ Fall 2011 408 Westcott Building Tallahassee, Florida 32306-1410 Deadline The application STATE UNIVERSITY * THE GRADUATE SCHOOL * 408 WESTCOTT * TALLAHASSEE, FL. 32306-1410 Fall 2011 ***FOUR

Bowers, Philip L.

134

25th AIAA Applied Aerodynamics Conference June 2528, 2007/Miami, FL  

E-Print Network (OSTI)

25th AIAA Applied Aerodynamics Conference June 25­28, 2007/Miami, FL Validation Study of Aerodynamic Analysis Tools for Design Optimization of Helicopter Rotors Seongim Choi , Juan J. Alonso , Edwin current aerodynamic analysis tools in predicting the unsteady flow field generated by helicopter rotors

Alonso, Juan J.

135

St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids  

Energy.gov (U.S. Department of Energy (DOE))

Breakout Session 3AConversion Technologies III: Energy from Our WasteWill we Be Rich in Fuel or Knee Deep in Trash by 2025? St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids William Eleazer, Supervising Engineer, Brown and Caldwell

136

Deciduous Fruit Options for North FL Landscapes by Terry DelValle, Urban Horticulture Extension Agent  

E-Print Network (OSTI)

Deciduous Fruit Options for North FL Landscapes by Terry DelValle, Urban Horticulture Extension your homework first. Site Selection: Here is a list of criteria. Fruit require an open sunny spot/variety will get at matur- ity. Selecting Varieties: Select varieties adapted to our area. Deciduous fruit, also

Watson, Craig A.

137

Machine Learning, ??, 1--6 (1994) fl 1994 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands.  

E-Print Network (OSTI)

Machine Learning, ??, 1--6 (1994) c fl 1994 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands. Book Review: C4.5: Programs for Machine Learning by J. Ross Quinlan. Morgan Kaufmann Publishers are among the most well known and widely used of all machine learning methods. Among decision tree

Salzberg, Steven

138

DOE Zero Energy Ready Home Case Study: Southeast Volusia Habitat for Humanity, Edgewater, FL  

Energy.gov (U.S. Department of Energy (DOE))

Case study of a DOE Zero Energy Ready affordable home in Edgewater, FL, that achieves a HERS score of 49 without PV. The one-story, 1,250-ft2 home has 2x4 walls with fiberglass batt inside plus R-3...

139

DOE Zero Energy Ready Home Case Study, Manatee County Habitat for Humanity, Ellenton, FL, Affordable  

Energy.gov (U.S. Department of Energy (DOE))

Case-study of a DOE Zero Energy Ready Home in Ellenton, FL that scored HERS 53 without PV, HERS 23 with PV. This 1,143 ft2 affordable home has R-23 ICF walls, a spray-foamed sealed attic, solar hot water, and a ducted mini-split heat pump.

140

DOE Zero Energy Ready Home Case Study, e2Homes, Winterpark, FL, Custom Homes  

Energy.gov (U.S. Department of Energy (DOE))

Case study of a DOE Zero Energy Ready Home in Winter Park, FL that scored HERS 57 without PV or HERS -7 with PV. This 4,305 ft2 custom home has autoclaved aerated concrete walls, a sealed attic with R-20 spray foam, and ductless mini-split heat pumps.

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

ARTM E. MASUNOV 12424 Research Parkway, Suite 400, Orlando, FL 32826 USA  

E-Print Network (OSTI)

Professor, NanoScience Technology Center, Department of Chemistry, Department of Physics & Florida Solar Energy Center, University of Central Florida, FL (UCF) 2002-2005: Postdoctoral Research Associate, Russia (with Prof. P. M. Zorkii) #12;Dr. Artëm E. Masunov, UCF NSTC 2 Professional Societies: - American

Kik, Pieter

142

Built waterfront through edge, connection, and exchange : reclaiming a waterfront for Greenpoint, a project in Brooklyn, N.Y.  

E-Print Network (OSTI)

??Currently the waterfront of Brooklyn N.Y. between the Gowanus Canal of Redhook and the Newton Creek of Greenpoint is predominantly lined with various types of (more)

Ziesemann, Rodney P. (Rodney Paul), 1967-

1998-01-01T23:59:59.000Z

143

The distribution of depleted uranium contamination in Colonie, NY, USA  

Science Journals Connector (OSTI)

Uranium oxide particles were dispersed into the environment from a factory in Colonie (NY, USA) by prevailing winds during the 1960s and '70s. Uranium concentrations and isotope ratios from bulk soil samples have been accurately measured using inductively coupled plasma quadrupole mass spectrometry (ICP-QMS) without the need for analyte separation chemistry. The natural range of uranium concentrations in the Colonie soils has been estimated as 0.72.1?gg?1, with a weighted geometric mean of 1.05?gg?1; the contaminated soil samples comprise uranium up to 50040?gg?1. A plot of 236U/238U against 235U/238U isotope ratios describes a mixing line between natural uranium and depleted uranium (DU) in bulk soil samples; scatter from this line can be accounted for by heterogeneity in the DU particulate. The end-member of DU compositions aggregated in these bulk samples comprises (2.050.06)נ10?3 235U/238U, (3.20.1)נ10?5 236U/238U, and (7.10.3)נ10?6 234U/238U. The analytical method is sensitive to as little as 50ngg?1 DU mixed with the natural uranium occurring in these soils. The contamination footprint has been mapped northward from site, and at least one third of the uranium in a soil sample from the surface 5cm, collected 5.1km NNW of the site, is DU. The distribution of contamination within the surface soil horizon follows a trend of exponential decrease with depth, which can be approximated by a simple diffusion model. Bioturbation by earthworms can account for dispersal of contaminant from the soil surface, in the form of primary uranium oxide particulates, and uranyl species that are adsorbed to organic matter. Considering this distribution, the total mass of uranium contamination emitted from the factory is estimated to be c. 4.8tonnes.

N.S. Lloyd; S.R.N. Chenery; R.R. Parrish

2009-01-01T23:59:59.000Z

144

Submit Your Ideas for the NY Energy Data Jam | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Submit Your Ideas for the NY Energy Data Jam Submit Your Ideas for the NY Energy Data Jam Submit Your Ideas for the NY Energy Data Jam June 19, 2013 - 11:03am Q&A What idea would you present at the Data Jam? Join the Conversation Addthis Applications powered by open energy data were on display at the Energy Datapalooza in June 2012. | Photo by Sarah Gerrity, Energy Department. Applications powered by open energy data were on display at the Energy Datapalooza in June 2012. | Photo by Sarah Gerrity, Energy Department. Alex Cohen Alex Cohen Senior Digital Information Strategist How can I participate? Even if you cannot attend in person, we still want you to participate. Help us by starting the conversation. Email us at newmedia@hq.doe.gov and tell us your idea. Tweet questions to @ENERGY with the hashtag #EnergyJam.

145

New York Battery and Energy Storage Technology Consortium NY BEST | Open  

Open Energy Info (EERE)

Storage Technology Consortium NY BEST Storage Technology Consortium NY BEST Jump to: navigation, search Name New York Battery and Energy Storage Technology Consortium (NY-BEST) Place Albany, New York Zip 12203 Product Albany-based project of NYSERDA promoting battery and energy storage in New York. Coordinates 42.707237°, -89.436378° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.707237,"lon":-89.436378,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

146

DOE - Office of Legacy Management -- Pier 38 - NY 0-18  

Office of Legacy Management (LM)

Pier 38 - NY 0-18 Pier 38 - NY 0-18 FUSRAP Considered Sites Site: Pier 38 (NY.0-18 ) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: This site is one of a group of 77 FUSRAP considered sites for which few, if any records are available in their respective site files to provide an historical account of past operations and their relationship, if any, with MED/AEC operations. Reviews of contact lists, accountable station lists, health and safety records and other documentation of the period do not provide sufficient information to warrant further search of historical records for information on these sites. These site files remain "open" to

147

DOE Awards Small Business Contract for West Valley NY Services | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Contract for West Valley NY Services Contract for West Valley NY Services DOE Awards Small Business Contract for West Valley NY Services September 26, 2012 - 12:00pm Addthis Media Contact Bill Taylor bill.taylor@srs.gov 803-952-8564 CINCINNATI - The Department of Energy (DOE) today awarded a task order (contract) to Chenega Global Services, LLC of Anchorage, Alaska, for administrative and technical support services at the West Valley Demonstration Project, West Valley, New York. The contract has a one-year performance period with a value of $1.3 million, and contains two one-year extension options with a total value of $4.12 million. Chenega Global Services is a certified small and disadvantaged business under the Small Business Administration. The West Valley Demonstration Project is a former commercial nuclear fuel

148

Weatherization Subgrantees Reach More N.Y. Homes | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Subgrantees Reach More N.Y. Homes Subgrantees Reach More N.Y. Homes Weatherization Subgrantees Reach More N.Y. Homes April 22, 2010 - 4:37pm Addthis Lindsay Gsell Thanks to funds from the Recovery Act, New York expanded its network of weatherization subgrantees. The state has added nine additional subgrantees to its network of 66 community-based organizations that provide energy conservation services on a local level. New York's Division of Housing and Community Renewal received slightly more than $100 million for Weatherization Assistance Program in 2009, a significant increase from its previous annual allotment of approximately $60 million. In addition to this increase in annual funding, DHCR also received $394 million in WAP stimulus funding from the Recovery Act. "New York's success has been built on a network of sub grantees and

149

DOE - Office of Legacy Management -- West Milton Reactor Site - NY 21  

Office of Legacy Management (LM)

Milton Reactor Site - NY 21 Milton Reactor Site - NY 21 FUSRAP Considered Sites Site: West Milton Reactor Site (NY.21) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: This site is one of a group of 77 FUSRAP considered sites for which few, if any records are available in their respective site files to provide an historical account of past operations and their relationship, if any, with MED/AEC operations. Reviews of contact lists, accountable station lists, health and safety records and other documentation of the period do not provide sufficient information to warrant further search of historical records for information on these sites. These site files remain "open" to

150

Submit Your Ideas for the NY Energy Data Jam | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Submit Your Ideas for the NY Energy Data Jam Submit Your Ideas for the NY Energy Data Jam Submit Your Ideas for the NY Energy Data Jam June 19, 2013 - 11:03am Q&A What idea would you present at the Data Jam? Join the Conversation Addthis Applications powered by open energy data were on display at the Energy Datapalooza in June 2012. | Photo by Sarah Gerrity, Energy Department. Applications powered by open energy data were on display at the Energy Datapalooza in June 2012. | Photo by Sarah Gerrity, Energy Department. Alex Cohen Alex Cohen Senior Digital Information Strategist How can I participate? Even if you cannot attend in person, we still want you to participate. Help us by starting the conversation. Email us at newmedia@hq.doe.gov and tell us your idea. Tweet questions to @ENERGY with the hashtag #EnergyJam.

151

GY EERE PROJECT MANAGEMENT CENTER NEPA DETERMINATION RECIPIENT:County of Escambia. FL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

, , ... ~. u.s. DEPAR n-IENT OF ENER GY EERE PROJECT MANAGEMENT CENTER NEPA DETERMINATION RECIPIENT:County of Escambia. FL PROJECT TITLE: Road Prison Geothermal Earth Coupled HVAC Upgrade Page 1 of2 STATE: FL Funding Opportunity Announcement Numbtr Procurement Instrument Number NEPA Control Number CID Number DE-FOA-OOOOO13 DE-EEOOOO764.oo1 0 Based on my review of the information concerning the proposed action. as NEPA Compliance Officer (authorized under DOE Order 451.IA), I have made the following determination; ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply

152

File:USDA-CE-Production-GIFmaps-FL.pdf | Open Energy Information  

Open Energy Info (EERE)

FL.pdf FL.pdf Jump to: navigation, search File File history File usage Florida Ethanol Plant Locations Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(1,275 × 1,650 pixels, file size: 274 KB, MIME type: application/pdf) Description Florida Ethanol Plant Locations Sources United States Department of Agriculture Related Technologies Biomass, Biofuels, Ethanol Creation Date 2010-01-19 Extent State Countries United States UN Region Northern America States Florida External links http://www.nass.usda.gov/Charts_and_Maps/Ethanol_Plants/ File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 16:12, 27 December 2010 Thumbnail for version as of 16:12, 27 December 2010 1,275 × 1,650 (274 KB) MapBot (Talk | contribs) Automated bot upload

153

u.s. DEPARTMENT OF ENERGY EERE PROJECT MANAGEMENT CENTER NFPA DETElU.flNATION  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DETElU.flNATION DETElU.flNATION RECIPIENT: lowa State University PROJE(.T TITLE: An Undergraduate Minor in Wind Energy Science, Engineering, and Policy Page 1 of2 STATE : IA Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA..()()()()()9() DE-EEOOO3549 GFO-l0-497 0 Based on my review orlhe inrormation concerning the proposed action, 85 NEPA Compliance Officer (authorized under DOE Order 451.IA), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and

154

Sediment Decontamination For Navigational And Environmental Restoration In NY/NJ Harbor Case Study: Passaic River, New Jersey  

E-Print Network (OSTI)

Sediment Decontamination For Navigational And Environmental Restoration In NY/NJ Harbor ­ Case, Arlington, VA 22230 Sediments in the NY/NJ Harbor are widely contaminated with toxic organic and inorganic compounds. Decontamination of these sediments is one tool that can be used to cope with the problems posed

Brookhaven National Laboratory

155

XNYGR/2795 SLF EBG Customizable Enrollment Form (NY) Page 1 of 3 Sun Life Insurance and Annuity Company of New York and  

E-Print Network (OSTI)

XNYGR/2795 SLF EBG Customizable Enrollment Form (NY) Page 1 of 3 Sun Life Insurance and Annuity% of the Basic Weekly Earnings #12;XNYGR/2795 SLF EBG Customizable Enrollment Form (NY) Page 2 of 3 Evidence

Suzuki, Masatsugu

156

DOE Zero Energy Ready Home Case Study: AquaZephyr, Ithaca, NY  

Energy.gov (U.S. Department of Energy (DOE))

Case study of a DOE Zero Energy Ready home in Ithaca, NY, that achieves a HERS 56 without PV or HERS 15 with 4-kW of PV. The two-story, 1,664-ft2 home is one of 17 single-family and 4 duplex homes...

157

May 21-22, 2012 Oncenter Complex Syracuse, NY Call for Posters  

E-Print Network (OSTI)

May 21-22, 2012 Oncenter Complex Syracuse, NY Call for Posters Present at the 2012 Biotechnology Symposium Poster Session Showcase your research to colleagues and professionals Network: Please submit your abstract and direct all questions to Advisory Council member and Poster Session Chair

Mather, Patrick T.

158

Concrete as a Green Building Material Columbia University, New York, NY 10027, USA  

E-Print Network (OSTI)

that influence resource utilization. Keywords: sustainable development, green buildings, supplementaryConcrete as a Green Building Material C. Meyer Columbia University, New York, NY 10027, USA to make it suitable as a "Green Building" material. Foremost and most successful in this regard is the use

Meyer, Christian

159

Physics of Nuclear Medicine Polytechnic Institute of NYU, Brooklyn, NY 11201  

E-Print Network (OSTI)

Physics of Nuclear Medicine Yao Wang Polytechnic Institute of NYU, Brooklyn, NY 11201 Based on J. L are from the textbook. #12;EL5823 Nuclear Physics Yao Wang, Polytechnic U., Brooklyn 2 Lecture Outline of decay · Radiotracers #12;EL5823 Nuclear Physics Yao Wang, Polytechnic U., Brooklyn 3 What is Nuclear

Suel, Torsten

160

SoMAS alumni have gone on to careers as: Acting Director, NY Sea Grant  

E-Print Network (OSTI)

· Environmental Affairs Officer on Marine & Coastal Biodiversity, UNEP Secretariat of Convention on Biological & Facilities Specialist, NY Sea Grant Extension · Director, Center for Marine & Wetland Studies, Conway, SC, Dewberry, Fairfax, VA · Marine Conservation Project Director, The Nature Conservancy · Marine Ecologist

Zhang, Minghua

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Abstract No. jone0514 Elemental Distributions for NY/NJ Harbor Sediments  

E-Print Network (OSTI)

Abstract No. jone0514 Elemental Distributions for NY/NJ Harbor Sediments K. Jones (BNL), H. Feng (Montclair State U.) and A. Lanzirotti (U. of Chicago) Beamline(s): X26A Sediments in the New York/New Jersey Waterways Sediments, is a useful material for use in investigation of the spatial variability. This standard

Brookhaven National Laboratory

162

Abstract No. jone0499 FTIR Measurement of Organic Functional Groups in NY/NJ Harbor Sediments  

E-Print Network (OSTI)

Abstract No. jone0499 FTIR Measurement of Organic Functional Groups in NY/NJ Harbor Sediments H. Jones (BNL) Beamline(s): U2B Sediments in urban rivers and estuaries are usually contaminated contaminated sediments cause to the environment and human health is now widely recognized and has stimulated

Brookhaven National Laboratory

163

DOE Zero Energy Ready Home Case Study: Greenhill Contracting, New Paltz, NY  

Energy.gov (U.S. Department of Energy (DOE))

Case study of a DOE Zero Energy Ready home in New Paltz, NY, that achieved a HERS score of 37 without PV or 7 with 7.5-kW PV. The two-story 2,288-ft2 home is one of 9 certified homes. All of the...

164

Borer problems and their control in dwarf apple trees David Kain, Entomology, NYSAES, Geneva, NY  

E-Print Network (OSTI)

Borer problems and their control in dwarf apple trees David Kain, Entomology, NYSAES, Geneva, NY in western New York, were invading burrknots on dwarf apple trees. About the same time, Dick Straub seemed to be becoming more common in dwarf apple plantings, as well. Based on Deb's alert, we decided

Agnello, Arthur M.

165

Dating the Glass Lake Dugout by Dendrochronology (NY State Museum #CN-37516)  

E-Print Network (OSTI)

Dating the Glass Lake Dugout by Dendrochronology (NY State Museum #CN-37516) Carol Griggs, Dendrochronology Lab, Cornell University, cbg4@cornell.edu The Glass Lake Dugout was found at the bottom of Glass for the Glass Lake Dugout (Figure 2B). The series was compared with other site and regional white pine

Manning, Sturt

166

DOE Zero Energy Ready Home Case Study, Ithaca Neighborhood Housing Services, Ithaca, NY  

Energy.gov (U.S. Department of Energy (DOE))

Case study of a DOE Zero Energy Ready Home in Ithaca, NY, that scored HERS 50 without PV. These 1,160 ft2 affordable town houses have R-20 advance framed walls, R-52 blown cellulose in attic, radiant heat with 92.5 AFUE boiler, and triple-pane windows.

167

8798_FL  

NLE Websites -- All DOE Office Websites (Extended Search)

The Movie . . . . . . . . . . . . . . . . . 8 Simulation Matches Historic Gamma-Ray Burst. . . . . . . . . . . . . . . . 11 Nearby Supernova Factory Churns Out Discoveries...

168

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

NLE Websites -- All DOE Office Websites (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

169

Word Pro - Untitled1  

Gasoline and Diesel Fuel Update (EIA)

Annual Energy Review 2011 TX CA FL LA IL OH PA NY GA IN MI NC VA NJ TN WA KY AL MO MN WI SC OK CO IA MD AZ MA MS KS AR OR NE UT CT WV NM NV AK WY ID ND ME MT SD NH HI...

170

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2012 (EIA)

Supply Model Regions Atlantic WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA VT...

171

F-7 U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2012 (EIA)

2014 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI...

172

F-5 U.S. Energy Information Administration | Annual Energy Outlook...  

Gasoline and Diesel Fuel Update (EIA)

Supply Model Regions Atlantic WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA VT...

173

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2012 (EIA)

East North Central Mountain AK WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT VT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA HI...

174

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2012 (EIA)

2013 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI...

175

padd map  

U.S. Energy Information Administration (EIA) Indexed Site

for Defense Districts AK HI WA OR CA NV AZ MT WY CO UT ID ND SD NE KS OK MO MN WI MI IL IN OH KY TN IA NM TX AR LA AL MS WV VA NC SC GA FL ME NH VT NY PA NJ MD DE MA CT RI...

176

U.S. Energy Information Administration | Annual Energy Outlook...  

Gasoline and Diesel Fuel Update (EIA)

2012 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI...

177

Microsoft Word - figure_99.doc  

Gasoline and Diesel Fuel Update (EIA)

Liquids Production." IN OH TN WV VA KY MD PA NY VT NH MA CT ME RI DE DC NC SC GA FL NJ AL MS LA MO AR TX NM OK CO KS UT AZ WY NE IL IA MN WI ND SD ID MT WA OR NV CA HI AK MI Gulf...

178

U.S. Energy Information Administration | Annual Energy Outlook...  

Gasoline and Diesel Fuel Update (EIA)

AZ OR CA HI V MT WY ID UT CO IV OK IA KS MO IL IN KY TN WI MI OH NE SD MN ND II NM TX MS AL AR LA III NJ CT VT ME RI MA NH FL GA SC NC WV MD DE VA NY PA I PAD District I - East...

179

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

180

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

182

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

183

File:USDA-CE-Production-GIFmaps-NY.pdf | Open Energy Information  

Open Energy Info (EERE)

NY.pdf NY.pdf Jump to: navigation, search File File history File usage New York Ethanol Plant Locations Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 324 KB, MIME type: application/pdf) Description New York Ethanol Plant Locations Sources United States Department of Agriculture Related Technologies Biomass, Biofuels, Ethanol Creation Date 2010-01-19 Extent State Countries United States UN Region Northern America States New York External links http://www.nass.usda.gov/Charts_and_Maps/Ethanol_Plants/ File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 16:19, 27 December 2010 Thumbnail for version as of 16:19, 27 December 2010 1,650 × 1,275 (324 KB) MapBot (Talk | contribs) Automated bot upload

184

MHK Projects/GCK Technology Shelter Island NY US | Open Energy Information  

Open Energy Info (EERE)

Shelter Island NY US Shelter Island NY US < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":5,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"500px","height":"350px","centre":false,"title":"","label":"","icon":"File:Aquamarine-marker.png","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.0682,"lon":-72.3387,"alt":0,"address":"","icon":"http:\/\/prod-http-80-800498448.us-east-1.elb.amazonaws.com\/w\/images\/7\/74\/Aquamarine-marker.png","group":"","inlineLabel":"","visitedicon":""}]}

185

DOE - Office of Legacy Management -- Pfaltz and Bauer Inc - New York - NY  

Office of Legacy Management (LM)

New York - New York - NY 45 FUSRAP Considered Sites Site: Pfaltz and Bauer Inc - New York (NY.45) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: This site is one of a group of 77 FUSRAP considered sites for which few, if any records are available in their respective site files to provide an historical account of past operations and their relationship, if any, with MED/AEC operations. Reviews of contact lists, accountable station lists, health and safety records and other documentation of the period do not provide sufficient information to warrant further search of historical records for information on these sites. These site files remain "open" to

186

File:EIA-Appalach1-NY-BOE.pdf | Open Energy Information  

Open Energy Info (EERE)

EIA-Appalach1-NY-BOE.pdf EIA-Appalach1-NY-BOE.pdf Jump to: navigation, search File File history File usage Appalachian Basin, New York Area Oil and Gas Fields By 2001 BOE Reserve Class Size of this preview: 776 × 600 pixels. Full resolution ‎(6,600 × 5,100 pixels, file size: 12.75 MB, MIME type: application/pdf) Description Appalachian Basin, New York Area Oil and Gas Fields By 2001 BOE Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States New York File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment

187

Affirmatively furthering fair housing : overcoming barriers to implementation of the Westchester County, NY false claims case settlement  

E-Print Network (OSTI)

Westchester County, NY was sued by the Anti-Discrimination Center of Metro New York, Inc. (ADC) under the False Claims Act for allegedly failing to meet its Affirmatively Further Fair Housing obligation for Community ...

Stein, Julie Iris

2010-01-01T23:59:59.000Z

188

CUT FLOWER CULTURAL PRACTICE STUDIES AND VARIETY TRIALS, 2013 H. C. Wien, Department of Horticulture, Cornell University, Ithaca NY  

E-Print Network (OSTI)

of Horticulture, Cornell University, Ithaca NY EXECUTIVE SUMMARY: ANEMONE/RANUNCULUS TUNNEL TRIAL. Page 5 lights, or to use a shorter duration of artificial light during the middle of the night

Pawlowski, Wojtek

189

Built waterfront through edge, connection, and exchange : reclaiming a waterfront for Greenpoint, a project in Brooklyn, N.Y.  

E-Print Network (OSTI)

Currently the waterfront of Brooklyn N.Y. between the Gowanus Canal of Redhook and the Newton Creek of Greenpoint is predominantly lined with various types of industrial and manufacturing uses. Scattered throughout are ...

Ziesemann, Rodney P. (Rodney Paul), 1967-

1998-01-01T23:59:59.000Z

190

DOE Zero Energy Ready Home Case Study, Ferguson Design and Construction, Inc., Sagaponak, NY, Custom Home  

Energy.gov (U.S. Department of Energy (DOE))

Case study of a DOE Zero Energy Ready Home in Long Island, NY, that scored HERS 43 without PV. This 5,088 ft2 custom home has R-25 double-stud walls, a vaulted roof with R-40 blown cellulose, R-10 XPS under slab, a hydro air system with 91% efficient boiler for forced air and radiant floor heat, and 100% LED lights.

191

The binary properties of the pulsating subdwarf B eclipsing binary PG 1336-018 (NY Vir)  

E-Print Network (OSTI)

We present an unbiased orbit solution and mass determination of the components of the eclipsing binary NY Vir as a critical test for the formation scenarios of subdwarf B stars. We obtained high-resolution time series VLT/UVES spectra and high-speed multicolour VLT/ULTRACAM photometric observations of NY Vir, a rapidly pulsating subdwarf B star in a short period eclipsing binary. Combining the radial velocity curve obtained from the VLT/UVES spectra with the VLT/ULTRACAM multicolour lightcurves, we determined numerical orbital solutions for this eclipsing binary. Due to the large number of free parameters and their strong correlations, no unique solution could be found, only families of solutions. We present three solutions of equal statistical significance, two of which are compatible with the primary having gone through a core He-flash and a common-envelope phase described by the $\\alpha$-formalism. These two models have an sdB primary of 0.466 \\msol and 0.389 \\msol, respectively. Finally, we report the detection of the Rossiter-McLaughlin effect for NY Vir.

M. Vu?kovi?; C. Aerts; R. stensen; G. Nelemans; H. Hu; C. S. Jeffery; V. S. Dhillon; T. R. Marsh

2007-06-22T23:59:59.000Z

192

Beta decay of Ga-62  

E-Print Network (OSTI)

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

193

J14252-1 FL Level 2 Rpt PQL Final Report.pdf  

Office of Legacy Management (LM)

660-14252-1 660-14252-1 Job Description: Pinellas Annual Sampling For: S.M. Stoller Corporation 2597 B 3/4 Road Grand Junction, CO 81503 Attention: Mr. Charles Tabor Nancy Robertson Project Manager II nrobertson@stl-inc.com 03/29/2007 Methods: FDEP, DOH Certification #: E84282 These test results meet all the requirements of NELAC unless specified in the case narrative. All questions regarding this test report should be directed to the STL Project Manager who signed this test report. The estimated uncertainty associated with these reported results is available upon request. Project Manager: Nancy Robertson STL Tampa 6712 Benjamin Road Suite 100, Tampa, FL 33634 Tel (813) 885-7427 Fax (813) 885-7049 www.stl-inc.com Severn Trent Laboratories, Inc. Page 1 of 37 Page 2 of 37

194

DOE Challenge Home Case Study, Manatee County Habitat for Humanity, Ellenton, FL, Affordable  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Manatee County Manatee County Habitat for Humanity Ellenton, FL BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

195

Eliza Liu Leader Electronics Inc. 4FL, No.3, Lane 45, Pao Hsin Rd.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Eliza Liu Eliza Liu Leader Electronics Inc. 4FL, No.3, Lane 45, Pao Hsin Rd. Hsin Tein, Taipei, (23 1) Taiwan, R.O.C Dear Ms. Liu: The attached notice advises you of the Department of Energy's (DOE) determination that certain products manufactured by Leader Electronics Inc. (L-E-I) do not comply with applicable energy conservation standards in the United States. The notice also advises you of your legal obligations. This determination stems from the certification reports filed by L-E-I pursuant to 10 C.F.R. § 430.62 (a)(4)(ix) regarding the performance of external power supplies manufactured by L-E-I. Violations of the applicable energy efficiency standards may be subject to civil penalties. Separate from this notice, DOE may issue a notice of civil penalty for such penalties as

196

Proceedings of the US Hydrographic Conference, Tampa, FL, 25-28 Apr 2011 THE PORT OF NORFOLK PROJECT  

E-Print Network (OSTI)

Proceedings of the US Hydrographic Conference, Tampa, FL, 25-28 Apr 2011 1 THE PORT OF NORFOLK for the Port of Norfolk Project are to explore viable methods of improvement with respect to both the process intuitive fashion, or providing it in a format that is inherently more useful. The Port of Norfolk Project

New Hampshire, University of

197

Machine Learning, 30, 241--273 (1998) fl 1998 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands.  

E-Print Network (OSTI)

Machine Learning, 30, 241--273 (1998) c fl 1998 Kluwer Academic Publishers, Boston. Manufactured of a machine­aided knowledge discovery process within the general area of drug design. Within drug design study reported in this paper supports four general lessons for machine learning and knowledge discovery

Page Jr., C. David

198

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

199

Sequence and annotation of the 369-kb NY-2A and the 345-kb AR158 viruses that infect Chlorella NC64A  

E-Print Network (OSTI)

Sequence and annotation of the 369-kb NY-2A and the 345-kb AR158 viruses that infect Chlorella NC64, unicellular, eukaryotic, chlorella-like green alga, Chlorella NC64A. The 368,683-bp genome of NY-2A and the 344,690-bp genome of AR158 are the two largest chlorella virus genomes sequenced to date; NY-2A

Graves, Michael V.

200

Contribution of the Reaction Ny-]Nnk to Antikaon Production in Relativistic Heavy-Ion Collisions  

E-Print Network (OSTI)

, such as Fermi motions, coherent productions, and multiple collisions. Shor et aI. showed that the simple nucleon-nucleon collision model with Fermi motions underestimates the number of K by more than an order of magnitude. Muller' suggested that the decay... of the product o(NY~NNK)vNpN over the normalized nucleon momentum distribution f( p ), i.e., NA~NNK ?3.3)& 10 s1 19 ?1 NNK ?1.6)& 10 s (15) In the simplified kinetic model of Ref. 11, the number of antikaons NK is related to the initial number of hyperons...

Ko, Che Ming.

1984-01-01T23:59:59.000Z

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201

SURFACE RADAR REPORTING 7.1. General. Radar observations of tropical cyclones will be made at Department of Defense  

E-Print Network (OSTI)

. Worth, TX Greer, SC Houston, TX Huntsville/Hytop, AL Jacksonville, FL Key West, FL Lake Charles, LA Melbourne, FL Miami, FL Mobile, AL Morehead City, NC New Orleans/Baton Rouge, LA New York City, NY

202

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

203

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

204

A mutation in the envelope protein fusion loop attenuates mouse neuroinvasiveness of the NY99 strain of West Nile virus  

SciTech Connect

Substitutions were engineered individually and in combinations at the fusion loop, receptor-binding domain and a stem-helix structure of the envelope protein of a West Nile virus strain, NY99, and their effects on mouse virulence and presentation of epitopes recognized by monoclonal antibodies (MAbs) were assessed. A single substitution within the fusion loop (L107F) attenuated mouse neuroinvasiveness of NY99. No substitutions attenuated NY99 neurovirulence. The L107F mutation also abolished binding of a non-neutralizing MAb, 3D9, whose epitope had not been previously identified. MAb 3D9 was subsequently shown to be broadly cross-reactive with other flaviviruses, consistent with binding near the highly conserved fusion loop.

Zhang Shuliu [Department of Microbiology and Immunology, University of Texas Medical Branch, 301 University Blvd., Galveston, TX 77555 (United States); Li Li; Woodson, Sara E. [Department of Pathology, University of Texas Medical Branch, 301 University Blvd., Galveston, TX 77555 (United States); Huang, Claire Y.-H.; Kinney, Richard M. [Arboviral Diseases Branch, Division of Vector-Borne Infectious Diseases, National Center for Zoonotic, Vector-Borne, and Enteric Diseases, Coordinating Center for Infectious Diseases, Centers for Disease Control and Prevention, U.S. Department of Health and Human Services, Fort Collins, CO (United States); Barrett, Alan D.T. [Department of Microbiology and Immunology, University of Texas Medical Branch, 301 University Blvd., Galveston, TX 77555 (United States)]|[Department of Pathology, University of Texas Medical Branch, 301 University Blvd., Galveston, TX 77555 (United States)]|[Center for Biodefense and Emerging Infectious Diseases, University of Texas Medical Branch, 301 University Blvd., Galveston, TX 77555 (United States)]|[Sealy Center for Vaccine Development, University of Texas Medical Branch, 301 University Blvd., Galveston, TX 77555 (United States)]|[Institute for Human Infections and Immunity, University of Texas Medical Branch, 301 University Blvd., Galveston, TX 77555 (United States); Beasley, David W.C. [Department of Microbiology and Immunology, University of Texas Medical Branch, 301 University Blvd., Galveston, TX 77555 (United States)]|[Center for Biodefense and Emerging Infectious Diseases, University of Texas Medical Branch, 301 University Blvd., Galveston, TX 77555 (United States)]|[Sealy Center for Vaccine Development, University of Texas Medical Branch, 301 University Blvd., Galveston, TX 77555 (United States)]|[Institute for Human Infections and Immunity, University of Texas Medical Branch, 301 University Blvd., Galveston, TX 77555 (United States)]. E-mail: d.beasley@utmb.edu

2006-09-15T23:59:59.000Z

205

The Pulsating sdB+M Eclipsing System NY Virginis and its Circumbinary Planets  

E-Print Network (OSTI)

We searched for circumbinary planets orbiting NY Vir in historical eclipse times including our long-term CCD data. Sixty-eight times of minimum light with accuracies better than 10 s were used for the ephemeris computations. The best fit to those timings indicated that the orbital period of NY Vir has varied due to a combination of two sinusoids with periods of $P_3$=8.2 yr and $P_4$=27.0 yr and semi-amplitudes of $K_3$=6.9 s and $K_4$=27.3 s, respectively. The periodic variations most likely arise from a pair of light-time effects due to the presence of third and fourth bodies that are gravitationally bound to the eclipsing pair. We have derived the orbital parameters and the minimum masses, $M_3 \\sin i_3$ = 2.8 M$\\rm_{Jup}$ and $M_4 \\sin i_4$ = 4.5 M$\\rm_{Jup}$, of both objects. A dynamical analysis suggests that the outer companion is less likely to orbit the binary on a circular orbit. Instead we show that future timing data might push its eccentricity to moderate values for which the system exhibits long...

Lee, Jae Woo; Youn, Jae-Hyuck; Han, Wonyong

2014-01-01T23:59:59.000Z

206

Structural, optical and electrical properties of WOxNy filmsdeposited by reactive dual magnetron sputtering  

SciTech Connect

Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios. The presence of even small amounts of oxygen had a great effect not only on the composition but on the structure of WOxNy films, as shown by Rutherford backscattering and x-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89 percent of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high.The deposition rate increased from 0.31 to 0.89 nm/s, the room temperature resistivity decreased from 1.65 x 108 to 1.82 x 10-2 ?cm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WOxNy films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.

Mohamed, Sodky H.; Anders, Andre

2006-06-05T23:59:59.000Z

207

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

208

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

209

NOT SPECIFIED IOTHER AMINDMENT 01' SOUCITAnONIMOD1FlCAnON OF CONTRACT I  

NLE Websites -- All DOE Office Websites (Extended Search)

SPECIFIED IOTHER SPECIFIED IOTHER AMINDMENT 01' SOUCITAnONIMOD1FlCAnON OF CONTRACT I I COH'IRACT ID COOl! I PAGE OF PAGU 1 1 2 2. AIIPDMENTlMOOIRCAlION NO. ~. EFFECTIVE DATI! 4 R£QUISmoNIPURCHASE REa. NO. IS.PR04CTNO.tII~' 068 See Block 16C 09SCOOl502 .~ .. , ClOIHI 00518 '.110 BY (I1G111Or """ Qfftt e) cooa 100518 Oak Ridge Oak Ridge U.S. Department of Energy U.S. Department of Energy P.O. Box 2001 P.O. Box 2001 oak Ridge TN 37831 Oak Ridge TN 37831 * IWIIi AHD ADQIWi5 OF COHrRACrn)RINO. _~ ao.IIPCOIIU ~ IIA. ANlHaawn OF ICUClTA'hOH HO. o AX RIDGE ASSOCIATED UNIVERSITIES, INC. P.O. BOX 117 II.DA1m(SEEne.u H, AX RIDGE TN 37830-6218 o " 1M. ~!!.CA~ OF COH1RACfIOAIlERHO. DE-ACOS-060R23100 lOB. DATED (Ull "

210

Comparison of Chloroflexus aurantiacus strain J-10-fl proteomes of cells grown chemoheterotrophically and photoheterotrophically  

SciTech Connect

Chloroflexus aurantiacus J-10-fl is a thermophilic green bacterium, a filamentous anoxygenic phototroph, and the model organism of the phylum Chloroflexi. We applied high-throughput, liquid chromatography-mass spectrometry in a global quantitative proteomics investigation of C. aurantiacus cells grown under oxic (chemoorganoheterotrophically) and anoxic (photoorganoheterotrophically) redox states. Our global analysis identified 13,524 high-confidence peptides that matched to 1,286 annotated proteins, 242 of which were either uniquely identified or significantly increased in abundance under anoxic culture conditions. Fifty-three of the 242 proteins are previously characterized photosynthesis-related proteins, including chlorosome proteins, proteins involved in the bacteriochlorophyll biosynthesis, 3-hydroxypropionate (3-OHP) CO2 fixation pathway, and components of electron transport chains. The remaining 190 proteins have not previously been reported. Of these, five proteins were found to be encoded by genes from a novel operon and observed only in photoheterotrophically grown cells. These proteins candidates may prove useful in further deciphering the phototrophic physiology of C. aurantiacus and other filamentous anoxygenic phototrophs.

Cao, Li; Bryant, Donald A.; Schepmoes, Athena A.; Vogl, Kajetan; Smith, Richard D.; Lipton, Mary S.; Callister, Stephen J.

2012-01-17T23:59:59.000Z

211

US. DEPARTMENT OF ENERGY EE RE PROJ ECT MANAGEMENT CENTER NEPA DE'l'flU..nNATION  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

!. !. US. DEPARTMENT OF ENERGY EE RE PROJ ECT MANAGEMENT CENTER NEPA DE'l'flU..nNATION Page 1 of2 RECIPIENT:Pineitas County Board of County Commissioners STATE: Fl PROJEc.T TITLE: Clearwater Campus District Cooling - Activity 3 Geothermal Test Bores Funding Opportunity Announ~ement Number DE-FOA-OOOOO13-000002 Procurement Instrument Number DE -EEOOOO795.003 NEPA Control Number GF0-0000795-003 cm Number G0795 Based on my review of the information ~oncerning the propos~ action, as NE PA Compliance Officer (authorized under DOE Order 451.IA), I have made t he following determination: ex, EA, [IS APPENDIX AND NUMBER: Description: 8 3. 1 Site characterizatio n .n. en vironmental monit oring A9 Information gathering, analysis, and

212

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

213

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto

1981-01-01T23:59:59.000Z

214

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network (OSTI)

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

215

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

216

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network (OSTI)

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

217

Masato R. Nakamura, Eng.Sc.D. 420 Central Park West #1C New York, NY 10025  

E-Print Network (OSTI)

Project · Designed reactors for gasification of solid waste using Computer Aided Design (CAD) software.Sc.D), Earth and Environmental Engineering, May 2008 Stochastic simulation and integrated modeling of waste, NY Research Associate, May 2008 ­ August 2010 Solid Waste Modeling Project · Developed a 2

218

Highland Hospital Archives, Williams Health Sciences Library 1000 South Ave, Rochester, NY 14620 Finding Aid for the Highland Hospital Archives  

E-Print Network (OSTI)

Highland Hospital Archives, Williams Health Sciences Library 1000 South Ave, Rochester, NY 14620 Finding Aid for the Highland Hospital Archives John R. Williams Sr. Collection Box 1 Correspondence Photographs Box 2 Articles, Memos, Pamphlets Book: Writings Hahnemann Hospital Collection Box 1 Hahnemann

Goldman, Steven A.

219

Hindawi Publishing Corporation 410 Park Avenue,15th Floor,#287 pmb,New York,NY 10022,USA  

E-Print Network (OSTI)

Corporation 410 Park Avenue,15th Floor,#287 pmb,New York,NY 10022,USA http. Bona USA J. R. Cannon USA S.-N. Chow USA B. S. Dandapat India E. DiBenedetto USA R. Finn USA R. L. Fosdick USA J. Frehse Germany A. Friedman USA R. Grimshaw UK J. Malek Czech Republic J. T. Oden USA R

Shen, Xuemin "Sherman"

220

DOE Challenge Home Case Study, Ferguson Design and Construction, Inc., Sagaponak, NY, Custom Home  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Ferguson Design & Ferguson Design & Construction, Inc. Sagaponack, NY BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

CRANE CO. 757 THIRD AVENUE NEW YORK. N.Y. THOMAS UNGERLAND ASSOCIATE GENERAL COUNSEL  

Office of Legacy Management (LM)

? ? z _ - c 0-e . CRANE CO. 757 THIRD AVENUE NEW YORK. N.Y. THOMAS UNGERLAND ASSOCIATE GENERAL COUNSEL December 14, 1987 James J. Fiore Director Office of Nuclear Energy Department of Energy Washington, D.C. Re: Crane - Indian Orchard Dear M r. Fiore: W e acknowledge receipt of your letter to Paul Hundt, dated September 29, 1987, which requests certain information about Crane's plant site in Indian Orchard, Massachusetts. The plant is not currently operating. Crane was unable to locate any records concerning the machining of uranium in the 1947-48 period for a customer, Brookhaven Labs, at the Indian Orchard, facility. It is believed that the records, which were kept on the second floor at 305 Hamshire Street, Indian Orchard, Massachusetts were moved ten or fifteen years ago

222

GaAsbased quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

223

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

224

Coulomb excitation of 73Ga  

E-Print Network (OSTI)

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekstrm; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Krll; R. Krcken; U. Kster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

225

Charakterisierung und Prparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network (OSTI)

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere (more)

Ebbers, Andr

2003-01-01T23:59:59.000Z

226

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

227

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

228

2012 SG Peer Review - Interoperability of Demand Response Resources in New York - Andre Wellington, ConEd NY  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Interoperability of Demand Response Interoperability of Demand Response Resources in NY Andre Wellington Con Edison June 8, 2012 December 2008 Interoperability of Demand Resource Resources in NY Objective Life-cycle Funding ($M) FY08 - FY13 $6.8 million Technical Scope (Insert graphic here) Develop and demonstrate technology required to integrate customer owned resources into the electrical distribution system * Evaluate interconnection designs * Design and install thermal storage plant with enhanced capabilities * Develop AutoDR application for targeted distributed resources 2 December 2008 Needs and Project Targets Develop the technology required to integrate customer owned distributed resources into the distribution system to enable the of deferment capital investments. * Remote dispatch of customer resources

229

STATE OF NEW YORK DEPARTMENT OF PUBLIC SERVICE THREE EMPIRE STATE PLAZA, ALBANY, NY 12223-1350  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

NEW YORK DEPARTMENT OF PUBLIC SERVICE NEW YORK DEPARTMENT OF PUBLIC SERVICE THREE EMPIRE STATE PLAZA, ALBANY, NY 12223-1350 www.dps.ny.gov PUBLIC SERVICE COMMISSIO~ PETER McGOWAN GARRY A. BROWN General Counsel Chairman PATRICIA L. ACAMPORA MAUREEN F. HARRIS JACLYN A, BRILLING ROBERT E. CURRY JR. Secretary JAMES L. LAROCCA Commissioners January 31, 2012 FILED ELECTRONICALLY @ http://energy.gov/oelcongestion-study-2012 Office of Electricity Delivery and Energy Reliability, OE-20 U.S. Department of Energy 1000 Independence Avenue, SW Washington, D.C. i0585 Re: Preparation ofthe 2012 Congestion Study Dear Sir or Madam: I am writing in response to the Notice of Regional Workshops and Request For Written Comments, 76 Federal Register No. 218, 70122 (November 10,2011). Enclosed please find the comments of

230

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

231

Hindawi Publishing Corporation 410 Park Avenue,15th Floor,#287 pmb,New York,NY 10022,USA  

E-Print Network (OSTI)

,15th Floor,#287 pmb,New York,NY 10022,USA http://www.hindawi.com/journals/denm/ Differential is not possible, you can contact denm.support@hindawi.com. Associate Editors N. Bellomo Italy J. L. Bona USA J. R. Cannon USA S.-N. Chow USA B. S. Dandapat India E. DiBenedetto USA R. Finn USA R. L. Fosdick USA J. Frehse

Plataniotis, Konstantinos N.

232

Hindawi Publishing Corporation 410 Park Avenue,15th Floor,#287 pmb,New York,NY 10022,USA  

E-Print Network (OSTI)

,NY 10022,USA http://www.hindawi.com/journals/denm/ Differential Equations & Nonlinear Mechanics Website.support@hindawi.com. Associate Editors N. Bellomo Italy J. L. Bona USA J. R. Cannon USA S.-N. Chow USA B. S. Dandapat India E. DiBenedetto USA R. Finn USA R. L. Fosdick USA J. Frehse Germany A. Friedman USA R. Grimshaw UK J. Malek Czech

Lim, Jong-Tae

233

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
234

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

235

Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy  

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

236

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network (OSTI)

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

237

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

238

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

239

40th Joint Propulsion Conference, Fort Lauderdale, FL, July 11-14, 2004 Effect of Segmented Anodes On the Beam Profile of a  

E-Print Network (OSTI)

40th Joint Propulsion Conference, Fort Lauderdale, FL, July 11-14, 2004 Effect of Segmented Anodes was investigated. A BPT-2000 magnetic circuit was retrofitted with a segmented anode with thermal measurement capabilities. Current was shared between shims and main anode by changing the voltage on the shim. A Faraday

King, Lyon B.

240

Zarillo, G. A., and Brehin, F. G. A. 2007. Hydrodynamic and Morphologic Modeling at Sebastian Inlet, FL. Proceedings Coastal Sediments '07 Conference, ASCE Press, Reston,  

E-Print Network (OSTI)

Inlet, FL. Proceedings Coastal Sediments '07 Conference, ASCE Press, Reston, VA, 1297-1310. HYDRODYNAMIC Modeling System (CMS) to investigate the morphological response to time varying forcing, sediment texture evolution of tidal inlet shoals is an important management tool, since they control sediment budgets. Inlet

US Army Corps of Engineers

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241

de dimensions diffrentes, l'unit lumineuse n'exigeai t que 3oo fl ergs, et dans l'arc voltaque l'unit de lumire correspond  

E-Print Network (OSTI)

précédente. C. DAGUENET. A. MACFARLANE. 2014 The disruptive discharge of electricity (Décharge disruptive. MACFARLANE and P.-M. PLAYFAIR. 2014 On the disruptive discharge of electricity through liquid dielectriesI38 de dimensions différentes, l'unité lumineuse n'exigeai t que 3oo fl ergs, et dans l'arc

Paris-Sud XI, Université de

242

FY 2013 Small Business Awards Bestowed on 12 Companies at DOE's 2014 Small Business Forum & Expo, Tampa FL, June 12, 2014  

Energy.gov (U.S. Department of Energy (DOE))

The U.S. Department of Energy's (DOE) Office of Small and Disadvantaged Business Utilization presented 12 companies with awards at their annual Small Business Forum & Expo, held this year in Tampa, FL, from June 10-12, 2014. Awards were presented by DOE's Chief of Staff Kevin Knobloch and OSDBU Director John Hale III.

243

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network (OSTI)

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

244

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

245

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

246

Ohmic contacts to n-GaSb  

E-Print Network (OSTI)

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

247

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

248

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

249

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

250

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90 misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

251

DETEW!INATION OF THE NEUTRON MAGNETIC FlONENT G.L. Greene and N.F. Ramsey  

NLE Websites -- All DOE Office Websites (Extended Search)

DETEW!INATION OF THE NEUTRON MAGNETIC FlONENT DETEW!INATION OF THE NEUTRON MAGNETIC FlONENT * G.L. Greene and N.F. Ramsey Harvard U n i v e r s i t y , Cambridge, N a s s a c h u s e t t s 02138 h W. Plampe i - I n s t i t u t Laue-Langevin, 38042 Grenoble, France' 9/ \ P J . M . P e n d l e b u r y and K. Smith " ' , \30ddb * A , 4 U n i v e r s i t y o f S u s s e x , Falmer, B r i g h t o n , B N I 9 Q H , U n i t e d Kingdom W . B . Dress and P.D. Miller -3 Oak Ridge N a t i o n a l L a b o r a t o r y , Oak Ridge, Tennessee 37838 P a u l P e r r i n C e n t r e d ' E t u d e s N u c l e a i r e s , 38042 C r e n o b l e , F r a n c e The n e u t r o n m a g n e t i c moment h a s been measured w i t h an improvement of a f a c t o r of 100 o v e r t h e p r e v i o u s b e s t measurement. s p e c t r o m e t e r o f t h e s e p a r a t e d o s c i l l a t o r y f i e l d t y p e c a p a b l e o f d e t e r m i n i n g a r e s o n a n c e s i g n a l f o r b o t h n e u t r o n s and p r o t o n s ( i n f l o w i n g H20), we f i n d u n / p p = 0.68497935(17)

252

GaNInGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaNInGaN LED devices. While most studies focus on output saturation known as current droop from InGaN layer effects, we show an alike influence from p-type GaNs inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

253

GaTe semiconductor for radiation detection  

DOE Patents (OSTI)

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

254

Monolithically Peltier-cooled vertical-cavity surface-emitting lasers Paul FL Berger, Niloy K. Dutta, Kent D. Choquette, Ghulam Hasnain, and Naresh Chand  

E-Print Network (OSTI)

GaAs laser. Also, in a monolithically integrated thermo- electric cooled InGaAsP/InP laser diode, Dutta et ~1 temperature of f 7.5 "C has been achieved using f 100 mA of thermoelectric cooler current. The observed" thermoelectric cooler, or a mono- lithically integrated thermoelectric cooler. Hava et ~1.~ ob- served a 2 "C

255

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network (OSTI)

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

256

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

257

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

258

420 West 118th St, New York, NY 10027 | http://energypolicy.columbia.edu | @ColumbiaUEnergy 1 June 14, 2014  

E-Print Network (OSTI)

West 118th St, New York, NY 10027 | http://energypolicy.columbia.edu | @ColumbiaUEnergy 1 June 14, 2014 the oil producing area around the giant Kirkuk field. ISIS forces occupied Mosul and reportedly control. Proven Oil Reserves billion barrels BP EIA Venezuela 298 298 Saudi Arabia 266 268 Canada 174 173 Iran 157

Qian, Ning

259

Presented at the 13 National Conference on Building Commissioning, May 4-6, 2005, New York, NY, and published in the Proceedings.  

E-Print Network (OSTI)

LBNL-58648 th Presented at the 13 National Conference on Building Commissioning, May 4-6, 2005, New York, NY, and published in the Proceedings. This work was supported by the State Technologies, Moosung Kim Lawrence Berkeley National Laboratory May 2005 #12;National Conference on Building

260

The U.S. Department of Energy's Brookhaven National Laboratory P.O. Box 5000, Upton NY 11973 631 344-2345 www.bnl.gov Nuclear Physics  

E-Print Network (OSTI)

the Office of Nuclear Physics within the U.S. Department of Energy's Office of Science, RHIC gives physicists of Nuclear Physics within the U.S. Department of Energy's Office of Science Total Upgrade Cost: $ 700 millionThe U.S. Department of Energy's Brookhaven National Laboratory · P.O. Box 5000, Upton NY 11973

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

2007 IEEE Workshop on Applications of Signal Processing to Audio and Acoustics October 21-24, 2007, New Paltz, NY PROBABILISTIC MODEL BASED SIMILARITY MEASURES FOR AUDIO  

E-Print Network (OSTI)

2007 IEEE Workshop on Applications of Signal Processing to Audio and Acoustics October 21-24, 2007, New Paltz, NY PROBABILISTIC MODEL BASED SIMILARITY MEASURES FOR AUDIO QUERY-BY-EXAMPLE Tuomas Virtanen This paper proposes measures for estimating the similarity of two audio signals, the objective being in query

Virtanen, Tuomas

262

Defect studies in low-temperature-grown GaAs  

SciTech Connect

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

263

Defect studies in low-temperature-grown GaAs  

SciTech Connect

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

264

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306-1480 Telephone 850.644.6876, Fax 850.644.3375 http://fda.fsu.edu  

E-Print Network (OSTI)

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306 in the Office of the Vice President for Faculty Development and Advancement in Westcott 115 by Monday, October 7

Sura, Philip

265

408 Westcott Building, Florida State University, P.O. Box 3061410, Tallahassee, FL 32306-1410 Telephone 850.644.3501 Fax 850.644.2969 www.gradschool.fsu.edu  

E-Print Network (OSTI)

408 Westcott Building, Florida State University, P.O. Box 3061410, Tallahassee, FL 32306 Westcott. Student deadline to departments is February 1, 2011. Folders for all nominees are due

Bowers, Philip L.

266

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network (OSTI)

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

267

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

268

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

269

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

270

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

271

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

272

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

273

Welcome to the Efficient Windows Collaborative  

NLE Websites -- All DOE Office Websites (Extended Search)

Window Selection Tool: New Construction Windows Window Selection Tool: New Construction Windows The Window Selection Tool will take you through a series of design conditions pertaining to your design and location. It is a step-by-step decision-making tool to help determine the most energy efficient window for your house. SELECT LOCATION: AK Anchorage AK Fairbanks AL Birmingham AL Mobile AR Little Rock AZ Flagstaff AZ Phoenix AZ Tucson CA Arcata CA Bakersfield CA Daggett CA Fresno CA Los Angeles CA Red Bluff CA Sacramento CA San Diego CA San Francisco CO Denver CO Grand Junction CT Hartford DC Washington DE Wilmington FL Daytona Beach FL Jacksonville FL Miami FL Tallahassee FL Tampa GA Atlanta GA Savannah HI Honolulu IA Des Moines ID Boise IL Chicago IL Springfield IN Indianapolis KS Wichita KY Lexington KY Louisville LA Lake Charles LA New Orleans LA Shreveport MA Boston MD Baltimore ME Portland MI Detroit MI Grand Rapids MI Houghton MN Duluth MN Minneapolis MO Kansas City MO St. Louis MS Jackson MT Billings MT Great Falls NC Raleigh ND Bismarck NE Omaha NH Concord NJ Atlantic City NM Albuquerque NV Las Vegas NV Reno NY Albany NY Buffalo NY New York OH Cleveland OH Dayton OK Oklahoma City OR Medford OR Portland PA Philadelphia PA Pittsburgh PA Williamsport RI Providence SC Charleston SC Greenville SD Pierre TN Memphis TN Nashville TX Brownsville TX El Paso TX Fort Worth TX Houston TX Lubbock TX San Antonio UT Cedar City UT Salt Lake City VA Richmond VT Burlington WA Seattle WA Spokane WI Madison WV Charleston WY Cheyenne AB Edmonton MB Winnipeg ON Toronto PQ Montreal SELECT HOUSE TYPE:

274

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

275

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmauntersttzter Molekularstrahlepitaxie (MBE). Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, und (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

276

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (15) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

277

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

278

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

279

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

280

Multiband GaNAsP Quaternary Alloys  

SciTech Connect

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Implantation of carbon in GaAs  

SciTech Connect

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

282

O?[]O? nuclear ?-decay of ?Ga  

E-Print Network (OSTI)

The branching ratio for the ?-Decay of ?Ga to the first excited O? state in ?Zn has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

283

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16 from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

284

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

285

DOE/EA-1631: Final Environmental Assessment for Department of Energy Loan Guarantee for Beacon Power Corporation Frequency Regulation Facility in Stephentown, NY (February 2009)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

31 31 Environmental Assessment for DEPARTMENT OF ENERGY LOAN GUARANTEE FOR BEACON POWER CORPORATION FREQUENCY REGULATION FACILITY IN STEPHENTOWN, N.Y. U.S. Department of Energy Loan Guarantee Program Office Washington, DC 20585 February 2009 FINAL ENVIRONMENTAL ASSESSMENT Environmental Assessment for Department of Energy Loan Guarantee for Beacon Power Corporation Frequency Regulation Facility in Stephentown, N.Y. DOE/EA-1631 TABLE OF CONTENTS LIST OF ACRONYMS iii 1.0 PURPOSE AND NEED 1 1.1 Introduction 1 1.2 Purpose and Need for Agency Action 1 2.0 DESCRIPTION OF PROPOSED ACTION AND NO ACTION ALTERNATIVE 3 2.1 Location 3 2.2 Proposed Action 3 2.2.1 Flywheel 3 2.2.2 Project Elements 4 2.2.3 Project Systems 5 2.2.4 Construction

286

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

287

Category:Utility Rate Impacts on PV Economics By Location | Open Energy  

Open Energy Info (EERE)

Utility Rate Impacts on PV Economics By Location Utility Rate Impacts on PV Economics By Location Jump to: navigation, search Impact of Utility Rates on PV Economics Montgomery, AL Little Rock, AR Flagstaff, AZ Phoenix, AZ Tucson, AZ Arcata, CA LA, CA San Francisco, CA Boulder, CO Eagle County, CO Pueblo, CO Bridgeport, CT Wilmington, DE Miami, FL Tampa, FL Atlanta, GA Savannah, GA Des Moines, IA Mason, IA Boise, ID Chicago, IL Springfield, IL Indianapolis, IN Goodland, KS Wichita, KS Lexington, KY New Orleans, LA Shreveport, LA Boston, MA Baltimore, MD Caribou, ME Portland, ME Detroit, MI Houghton-Lake, MI Traverse City, MI International Falls, MN Minneapolis, MN Kansas City, MO Jackson, MS Billings, MT Greensboro, NC Wilmington, NC Bismarck, ND Minot, ND Omaha, NE Concord, NH Atlantic City, NJ Albuquerque, NM Las Vegas, NV Reno, NV New York, NY

288

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network (OSTI)

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

289

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

290

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network (OSTI)

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

291

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network (OSTI)

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

292

Kohlenstoffhaltige ternre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternren Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner drften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

293

AEOSup ltr to Dear Customer  

Gasoline and Diesel Fuel Update (EIA)

WA WA OR CA ID NV UT AZ NM CO WY MT ND SD NE KS OK TX MN IA MO AR LA WI IL KY IN OH WV TN MS AL GA SC NC VA PA NY VT ME NH MA RI CT NJ DE MD D.C. FL MI Electricity Supply Regions 1 ECAR 2 ERCOT 3 MAAC 4 MAIN 5 MAPP 6 NY 7 NE 8 FL 9 STV 10 SPP 11 NWP 12 RA 13 CNV 13 11 12 2 10 5 9 8 1 6 7 3 AK 15 14 H I 14 AK 15 H I Figure 2. Electricity Market Module (EMM) Regions 1. ECAR = East Central Area Reliability Coordination Agreement 2. ERCOT = Electric Reliability Council of Texas 3. MACC = Mid-Atlantic Area Council 4. MAIN = Mid-America Interconnected Network 5. MAPP = Mid-Continent Area Power Pool 6. NY = Northeast Power Coordinating Council/ New York 7. NE = Northeast Power Coordinating Council/ New England 8. FL = Southeastern Electric Reliability Council/ Florida 9. STV = Southeastern Electric Reliability Council /excluding Florida 10. SPP

294

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

295

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

296

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

297

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

298

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

299

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

300

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network (OSTI)

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

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301

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

NLE Websites -- All DOE Office Websites (Extended Search)

Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

302

P-type doping of GaN  

SciTech Connect

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

303

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN FranzKeldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

304

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

305

Vacancy-Induced 22 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 22 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

306

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Nel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

307

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

308

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

309

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

310

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

311

Allele and haplotype distribution for 16 Y-STRs (AmpFlSTR Y-filer kit) in the state of Chihuahua at North Center of Mexico  

Science Journals Connector (OSTI)

The AmpFlSTR Y-filer kit, including 16 Y-STRs was analyzed in 326 males from Chihuahua, at North Central, Mexico. Allele frequencies and gene diversity for each locus were estimated. Four allele duplications, namely DYS389II, DYS390, DYS391 and DYS439; and one allele null at DYS448 were observed in the sample. The haplotype diversity was 99.970.3%. The AMOVA results, including a previous report from West of Mexico (Jalisco), showed that most of the genetic variability between these Mexican populations is attributable to intrapopulational differences (99.87%). This result supports a low-genetic differentiation between males from North and West regions of Mexico.

A.B. Gutirrez-Alarcn; M. Moguel-Torres; A.K. Len-Jimnez; G.E. Cullar-Nevrez; H. Rangel-Villalobos

2007-01-01T23:59:59.000Z

312

Targeting Metal-A? Aggregates with Bifunctional Radioligand [11C]L2-b and a Fluorine-18 Analogue [18F]FL2-b  

Science Journals Connector (OSTI)

Autoradiography experiments with AD positive and healthy control brain samples were used to determine the specificity of binding for the radioligands compared to [11C]PiB, a known imaging agent for ?-amyloid (A?) aggregates. ... Displacement studies of [11C]L2-b and [18F]FL2-b with PiB and AV-45 determined that L2-b binds to A? aggregates differently from known radiopharmaceuticals. Finally, brain uptake of [11C]L2-b was examined through microPET imaging in healthy rhesus macaque, which revealed a maximum uptake at 2.5 min (peak SUV = 2.0) followed by rapid egress (n = 2). ...

Brian P. Cary; Allen F. Brooks; Maria V. Fawaz; Xia Shao; Timothy J. Desmond; Garrett M. Carpenter; Phillip Sherman; Carole A. Quesada; Roger L. Albin; Peter J. H. Scott

2014-11-09T23:59:59.000Z

313

Measurement of the Inclusive e{\\pm}p Scattering Cross Section at High Inelasticity y and of the Structure Function FL  

E-Print Network (OSTI)

A measurement is presented of the inclusive neutral current e\\pm p scattering cross section using data collected by the H1 experiment at HERA during the years 2003 to 2007 with proton beam energies Ep of 920, 575, and 460 GeV. The kinematic range of the measurement covers low absolute four-momentum transfers squared, 1.5 GeV2 < Q2 < 120 GeV2, small values of Bjorken x, 2.9 \\cdot 10-5 < x < 0.01, and extends to high inelasticity up to y = 0.85. The structure function FL is measured by combining the new results with previously published H1 data at Ep = 920 GeV and Ep = 820 GeV. The new measurements are used to test several phenomenological and QCD models applicable in this low Q2 and low x kinematic domain.

Aaron, F D; Andreev, V; Backovic, S; Baghdasaryan, A; Baghdasaryan, S; Barrelet, E; Bartel, W; Behrend, O; Belov, P; Begzsuren, K; Belousov, A; Bizot, J C; Boudry, V; Bozovic-Jelisavcic, I; Bracinik, J; Brandt, G; Brinkmann, M; Brisson, V; Britzger, D; Bruncko, D; Bunyatyan, A; Buschhorn, G; Bylinkin, A; Bystritskaya, L; Campbell, A J; Cantun Avila, K B; Ceccopieri, F; Cerny, K; Cerny, V; Chekelian, V; Cholewa, A; Contreras, J G; Coughlan, J A; Cvach, J; Dainton, J B; Daum, K; Delcourt, B; Delvax, J; De Wolf, E A; Diaconu, C; Dobre, M; Dodonov, V; Dossanov, A; Dubak, A; Eckerlin, G; Egli, S; Eliseev, A; Elsen, E; Favart, L; Fedotov, A; Felst, R; Feltesse, J; Ferencei, J; Fischer, D J; Fleischer, M; Fomenko, A; Gabathuler, E; Gayler, J; Ghazaryan, S; Glazov, A; Goerlich, L; Gogitidze, N; Gouzevitch, M; Grab, C; Grebenyuk, A; Greenshaw, T; Grell, B R; Grindhammer, G; Habib, S; Haidt, D; Helebrant, C; Henderson, R C.W; Hennekemper, E; Henschel, H; Herbst, M; Herrera, G; Hildebrandt, M; Hiller, K H; Hoffmann, D; Horisberger, R; Hreus, T; Huber, F; Jacquet, M; Janssen, X; Jonsson, L; Jung, A W; Jung, H; Kapichine, M; Katzy, J; Kenyon, I R; Kiesling, C; Klein, M; Kleinwort, C; Kluge, T; Knutsson, A; Kogler, R; Kostka, P; Kraemer, M; Kretzschmar, J; Kruger, K; Kutak, K; Landon, M P.J; Lange, W; Lastovicka-Medin, G; Laycock, P; Lebedev, A; Lendermann, V; Levonian, S; Lipka, K; List, B; List, J; Loktionova, N; Lopez-Fernandez, R; Lubimov, V; Makankine, A; Malinovski, E; Marage, P; Martyn, H U; Maxfield, S J; Mehta, A; Meyer, A B; Meyer, H; Meyer, J; Mikocki, S; Milcewicz-Mika, I; Moreau, F; Morozov, A; Morris, J V; Mozer, M U; Mudrinic, M; Muller, K; Naumann, Th; Newman, P R; Niebuhr, C; Nikiforov, A; Nikitin, D; Nowak, G; Nowak, K; Olsson, J E; Osman, S; Ozerov, D; Pahl, P; Palichik, V; Panagoulias, I; Pandurovic, M; Papadopoulou, Th; Pascaud, C; Patel, G D; Perez, E; Petrukhin, A; Picuric, I; Piec, S; Pirumov, H; Pitzl, D; Placakyte, R; Pokorny, B; Polifka, R; Povh, B; Radescu, V; Raicevic, N; Ravdandorj, T; Reimer, P; Rizvi, E; Robmann, P; Roosen, R; Rostovtsev, A; Rotaru, M; Ruiz Tabasco, J E; Rusakov, S; Salek, D; Sankey, D P.C; Sauter, M; Sauvan, E; Schmitt, S; Schoeffel, L; Schoning, A; Schultz-Coulon, H C; Sefkow, F; Shtarkov, L N; Shushkevich, S; Sloan, T; Smiljanic, I; Soloviev, Y; Sopicki, P; South, D; Spaskov, V; Specka, A; Staykova, Z; Steder, M; Stella, B; Stoicea, G; Straumann, U; Sykora, T; Thompson, P D; Toll, T; Tran, T H; Traynor, D; Truol, P; Tsakov, I; Tseepeldorj, B; Tsurin, I; Turnau, J; Urban, K; Valkarova, A; Vallee, C; Van Mechelen, P; Vargas, A; Vazdik, Y; von den Driesch, M; Wegener, D; Wunsch, E; Zacek, J; Zalesak, J; Zhang, Z; Zhokin, A; Zohrabyan, H; Zomer, F

2011-01-01T23:59:59.000Z

314

Localized corrosion of GaAs surfaces and formation of porous GaAs  

SciTech Connect

The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

Schmuki, P.; Vitus, C.M.; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States); Fraser, J.; Graham, M.J. [National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

1995-12-01T23:59:59.000Z

315

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

316

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; zgr, .; Morko, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

317

The development of integrated chemical microsensors in GaAs  

SciTech Connect

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

318

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network (OSTI)

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

319

The Essentials for GA Water Planning The Relationship  

E-Print Network (OSTI)

Water Plan and the Alabama-Florida-Georgia Water Sharing Dispute (The failure to agree on the two Management F. Conservation & Reuse a. Programs for Water Use Efficiency b. Consumptive Use & Return Flows GThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

320

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306-1480 Telephone 850.644.6876, Fax 850.644.3375 http://fda.fsu.edu  

E-Print Network (OSTI)

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306 Development and Advancement in Westcott 115 by Friday, March 21, 2014, for submission to the President and Advancement in Westcott 115 for each specialized faculty. Article 14 (and Appendix J of the FSU-BOT UFF

Sura, Philip

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

A. Kusiak, Data Mining and Decision Making, in B.V. Dasarathy (Ed.), Proceedings of the SPIE Conference on Data Mining and Knowledge Discovery: Theory, Tools, and Technology IV, Vol. 4730, SPIE, Orlando, FL, April 2002, pp. 155-165.  

E-Print Network (OSTI)

A. Kusiak, Data Mining and Decision Making, in B.V. Dasarathy (Ed.), Proceedings of the SPIE Conference on Data Mining and Knowledge Discovery: Theory, Tools, and Technology IV, Vol. 4730, SPIE, Orlando, FL, April 2002, pp. 155-165. Data Mining and Decision Making Andrew Kusiak Department of Mechanical

Kusiak, Andrew

322

Structure of a Si(100)22-Ga surface  

Science Journals Connector (OSTI)

The 22 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

323

Electronic structure of metallic antiperovskite compound GaCMn3  

Science Journals Connector (OSTI)

We have investigated the electronic structures of antiperovskite GaCMn3 and related Mn compounds SnCMn3, ZnCMn3, and ZnNMn3. In the paramagnetic state of GaCMn3, the Fermi surface nesting feature along the ?R direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector Q??R. Calculated susceptibilities confirm the nesting scenario for GaCMn3, and also explain various magnetic structures of other antiperovskite compounds. Through the band folding effect, the AFM phase of GaCMn3 is stabilized. Nearly equal densities of states at the Fermi level in the ferromagnetic and AFM phases of GaCMn3 indicate that two phases are competing in the ground state.

J. H. Shim; S. K. Kwon; B. I. Min

2002-07-10T23:59:59.000Z

324

Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers  

Science Journals Connector (OSTI)

In0.135Ga0.865N/GaN pin solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (I...

X. M. Cai; Y. Wang; Z. D. Li; X. Q. Lv; J. Y. Zhang; L. Y. Ying

2013-05-01T23:59:59.000Z

325

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network (OSTI)

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

326

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter

327

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network (OSTI)

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

328

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network (OSTI)

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

329

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network (OSTI)

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

330

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network (OSTI)

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

331

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

332

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1  

E-Print Network (OSTI)

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1 Jie Lian,2,3 Wei Lu,4 and Lumin Wang1,5,* 1 Department of Materials Science and Engineering, University Arbor, Michigan 48109, USA 3 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer

Lu, Wei

333

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network (OSTI)

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

334

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

335

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

336

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gmez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

337

Better Buildings Neighborhood Program: Better Buildings Partners  

NLE Websites -- All DOE Office Websites (Extended Search)

Better Better Buildings Partners to someone by E-mail Share Better Buildings Neighborhood Program: Better Buildings Partners on Facebook Tweet about Better Buildings Neighborhood Program: Better Buildings Partners on Twitter Bookmark Better Buildings Neighborhood Program: Better Buildings Partners on Google Bookmark Better Buildings Neighborhood Program: Better Buildings Partners on Delicious Rank Better Buildings Neighborhood Program: Better Buildings Partners on Digg Find More places to share Better Buildings Neighborhood Program: Better Buildings Partners on AddThis.com... Better Buildings Residential Network Progress Stories Interviews Videos Events Quick Links to Partner Information AL | AZ | CA | CO | CT FL | GA | IL | IN | LA ME | MD | MA | MI | MO NE | NV | NH | NJ | NY

338

Better Buildings Neighborhood Program: Jacksonville, Florida  

NLE Websites -- All DOE Office Websites (Extended Search)

Jacksonville, Jacksonville, Florida to someone by E-mail Share Better Buildings Neighborhood Program: Jacksonville, Florida on Facebook Tweet about Better Buildings Neighborhood Program: Jacksonville, Florida on Twitter Bookmark Better Buildings Neighborhood Program: Jacksonville, Florida on Google Bookmark Better Buildings Neighborhood Program: Jacksonville, Florida on Delicious Rank Better Buildings Neighborhood Program: Jacksonville, Florida on Digg Find More places to share Better Buildings Neighborhood Program: Jacksonville, Florida on AddThis.com... Better Buildings Residential Network Progress Stories Interviews Videos Events Quick Links to Partner Information AL | AZ | CA | CO | CT FL | GA | IL | IN | LA ME | MD | MA | MI | MO NE | NV | NH | NJ | NY NC | OH | OR | PA | SC

339

Better Buildings Neighborhood Program: Indianapolis, Indiana  

NLE Websites -- All DOE Office Websites (Extended Search)

Indianapolis, Indianapolis, Indiana to someone by E-mail Share Better Buildings Neighborhood Program: Indianapolis, Indiana on Facebook Tweet about Better Buildings Neighborhood Program: Indianapolis, Indiana on Twitter Bookmark Better Buildings Neighborhood Program: Indianapolis, Indiana on Google Bookmark Better Buildings Neighborhood Program: Indianapolis, Indiana on Delicious Rank Better Buildings Neighborhood Program: Indianapolis, Indiana on Digg Find More places to share Better Buildings Neighborhood Program: Indianapolis, Indiana on AddThis.com... Better Buildings Residential Network Progress Stories Interviews Videos Events Quick Links to Partner Information AL | AZ | CA | CO | CT FL | GA | IL | IN | LA ME | MD | MA | MI | MO NE | NV | NH | NJ | NY NC | OH | OR | PA | SC

340

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castao, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

342

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

343

Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells  

Science Journals Connector (OSTI)

Low-temperature decay times ?PL are reported for a series of InxGa1-xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4?Lz?10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in ?PL with increasing In composition (0.05?x?0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

Haiping Yu; Christine Roberts; Ray Murray

1995-07-15T23:59:59.000Z

344

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

345

Photovoltaic properties of GaAs:Be nanowire arrays  

SciTech Connect

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.

Bouravleuv, A. D.; Beznasyuk, D. V.; Gilstein, E. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Tchernycheva, M.; Luna Bugallo, A. De; Rigutti, L. [University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France); Yu, L. [CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France); Proskuryakov, Yu. [University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom); Shtrom, I. V.; Timofeeva, M. A. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I.; Cirlin, G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-06-15T23:59:59.000Z

346

Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires  

SciTech Connect

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Choi, J. W.; Ji, H.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2011-12-23T23:59:59.000Z

347

Effects of Ga ion-beam irradiation on monolayer graphene  

SciTech Connect

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)] [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China) [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-08-12T23:59:59.000Z

348

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) experiments were performed on In 0.22 Ga 0.78 As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off) and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth.

K. Chattopadhyay; J. Aubel; S. Sundaram; J. E. Ehret; R. Kaspi; Keith R. Evans

1997-01-01T23:59:59.000Z

349

The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency  

Science Journals Connector (OSTI)

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) ... quantum dot effectively enhance the overall power conversion efficiency

Chen-Chen Chung; Binh Tinh Tran; Hau-Vei Han; Yen-Teng Ho

2014-03-01T23:59:59.000Z

350

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

Vclav tengl, Jil Henych, Michaela Slun, Tom Matys Grygar, Jana Velick, Martin Kormunda

2014-01-01T23:59:59.000Z

351

Kinetics of indirect photoluminescence in GaAs/AlxGa1?x As double quantum wells in a random potential with a large amplitude  

Science Journals Connector (OSTI)

The kinetics of indirect photoluminescence of GaAs/AlxGa1?x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is ...

L. V. Butov; A. V. Mintsev; A. I. Filin

1999-05-01T23:59:59.000Z

352

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

353

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

354

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

355

Polarization charges and polarization-induced barriers in AlxGa1xNGaN and InyGa1yNGaN heterostructures  

E-Print Network (OSTI)

N?GaN heterostructures L. Jia,a) E. T. Yu, D. Keogh, and P. M. Asbeck Department of Electrical and Computer EngineeringGa1 yN surrounded by n-GaN, capacitance­ voltage profiling studies combined with elementary will most likely require further improvements in p-type GaN conduc- tivity and fabrication of low-resistance

Yu, Edward T.

356

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

357

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

358

Lattice vibrations of pure and doped GaSe  

SciTech Connect

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

359

GaAs solar cells close to the thermodynamic limit  

Science Journals Connector (OSTI)

The efficiency of GaAs solar cells can be increased by applying angularly selective filters. It is shown in terms of detailed balance model, why this happens and the concept is proven...

Hoehn, Oliver; Kraus, Tobias; Bauhuis, Gerard; Schwarz, Ulrich T; Blsi, Benedikt

360

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network (OSTI)

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

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361

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

362

Exciton front propagation in photoexcited GaAs quantum wells  

E-Print Network (OSTI)

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton ...

Yang, Sen

363

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents (OSTI)

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

364

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

365

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang

2011-10-01T23:59:59.000Z

366

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

367

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network (OSTI)

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

368

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network (OSTI)

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

369

The U.S. Department of Energy's Brookhaven National Laboratory P.O. Box 5000, Upton NY 11973 631 344-2345 www.bnl.gov The Relativistic Heavy Ion Collider  

E-Print Network (OSTI)

The U.S. Department of Energy's Brookhaven National Laboratory · P.O. Box 5000, Upton NY 11973 RHIC colli- sions -- including photons, electrons, muons, and quark- containing particles -- using large steel magnets that surround the collision zone. · Photons, electrons, and muons are not affected

370

Office of Technology Transfer and Innovation Partnerships, PO Box 6000, Binghamton, NY, 13902-6000. Ph: (607) 777-5870. FORM TT-2 Revised 03/19/09 FORM TT -2  

E-Print Network (OSTI)

Office of Technology Transfer and Innovation Partnerships, PO Box 6000, Binghamton, NY, 13902-6000. Ph: (607) 777-5870. FORM TT-2 Revised 03/19/09 FORM TT - 2 Technology Transfer NEW TECHNOLOGY DISCLOSURE PLEASE SUBMIT COMPLETED FORM TO OFFICE OF TECHNOLOGY TRANSFER AND INNOVATIVE PARTNERSHIPS 1

Suzuki, Masatsugu

371

The U.S. Department of Energy's Brookhaven National Laboratory P.O. Box 5000, Upton NY 11973 631 344-2345 www.bnl.gov National Synchrotron Light Source II  

E-Print Network (OSTI)

The U.S. Department of Energy's Brookhaven National Laboratory · P.O. Box 5000, Upton NY 11973 · 631 344-2345 · www.bnl.gov FACTS (04-14) National Synchrotron Light Source II NSLS-II by the Numbers World's Premier SynchrotronWill Light theWay to New Discoveries Like all synchrotrons, the National

Ohta, Shigemi

372

2005 IEEE Workshop on Applications of Signal Processing to Audio and Acoustics October 16-19, 2005, New Paltz, NY A PROTOTYPE SYSTEM FOR OBJECT CODING OF MUSICAL AUDIO  

E-Print Network (OSTI)

2005 IEEE Workshop on Applications of Signal Processing to Audio and Acoustics October 16-19, 2005, New Paltz, NY A PROTOTYPE SYSTEM FOR OBJECT CODING OF MUSICAL AUDIO Emmanuel Vincent and Mark D coding of musical audio, and more precisely with the extraction of pitched sound objects in polyphonic

Paris-Sud XI, Université de

373

,i . Hadley `~~OE..."~OEoe...fl...l"~,, . ,2006 ,49(5) :1271 1278 Zhou B T, Wang H J . Interannual and interdecadal variations of the Hadley Circulation and its connection with tropical sea surface  

E-Print Network (OSTI)

,i»? . Hadley »·`~~OE...°"~OE·oe...°­»fl...º¨¨·l"£´~,, . §­¤ ,2006 ,49(5) :1271¡« 1278 Zhou B T, Wang H J . Interannual and interdecadal variations of the Hadley Circulation and its connection with tropical sea surface temperature. Chinese J . Geophys. (in Chinese) , 2006 ,49(5) :1271¡« 1278 Hadley

374

Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy  

Science Journals Connector (OSTI)

The electronic properties of uncharged Ga monovacancies in GaP(110) surfaces are determined from voltage-dependent scanning tunneling microscopy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occupied defect states exist. Depressed dangling bonds in the occupied-state images indicate an inward relaxation of the neighboring P atoms. The results agree with recent theoretical work.

Ph. Ebert and K. Urban

1998-07-15T23:59:59.000Z

375

Microscopic identification of the compensation mechanisms in Si-doped GaAs  

Science Journals Connector (OSTI)

The compensation mechanisms of SiGa donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the SiGa donors are consecutively electrically deactivated by SiAs acceptors, Si clusters, and SiGa-Ga-vacancy complexes. A microscopic model based on the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. 1996 The American Physical Society.

C. Domke, Ph. Ebert, M. Heinrich, and K. Urban

1996-10-15T23:59:59.000Z

376

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

377

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

378

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

379

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

380

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Metal contacts on ZnSe and GaN  

SciTech Connect

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

382

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network (OSTI)

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

383

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

384

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network (OSTI)

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

385

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

NLE Websites -- All DOE Office Websites (Extended Search)

Melting Behavior of GaN Nanotubes. Atomic-Level Study of Melting Behavior of GaN Nanotubes. Abstract: Molecular dynamics simulations with a Stillinger-Weber potential have been...

386

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

387

Device-level thermal analysis of GaN-based electronics  

E-Print Network (OSTI)

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

388

Structural ordering and interface morphology in symmetrically strained(GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)  

Science Journals Connector (OSTI)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest ?110? directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation. A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

C. Giannini; L. Tapfer; Y. Zhuang; L. De Caro; T. Marschner; W. Stolz

1997-02-15T23:59:59.000Z

389

NGA98fin5.vp  

Gasoline and Diesel Fuel Update (EIA)

8 8 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1998 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1998 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental

390

C:\ANNUAL\VENTCHAP.V8\NGAla1109.vp  

Gasoline and Diesel Fuel Update (EIA)

2000 2000 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-99.99 10.00-11.99 12.00+ 19. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2000 (Dollars per Thousand Cubic Feet) Figure 20. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 2000 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural

391

C:\Annual\VENTCHAP.V8\NGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

2002 2002 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition," and Form EIA 910, "Monthly Natural Gas Marketer Survey." 17. Average Price of Natural Gas Delivered to U.S. Commercial Consumers, 2002 (Dollars per Thousand Cubic Feet) Figure 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 16. Average Price of Natural Gas Delivered to U.S. Residential Consumers, 2002 (Dollars per Thousand Cubic Feet) Figure Source: Energy Information Administration

392

Microsoft Word - Figure_18_19.doc  

Gasoline and Diesel Fuel Update (EIA)

9 9 0.00-2.49 2.50-4.49 4.50-6.49 6.50-8.49 8.50-10.49 10.50+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK MD 0.00-2.49 2.50-4.49 4.50-6.49 6.50-8.49 8.50-10.49 10.50+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Figure 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2004 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Power Consumers, 2004 (Dollars per Thousand Cubic Feet) Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: States where the electric power price has been withheld (see Table 23) are included in the $0.00-$2.49 price category.

393

Microsoft Word - NGAMaster_State_TablesNov12.doc  

Gasoline and Diesel Fuel Update (EIA)

49 49 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK MD 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Figure 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2003 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Power Consumers, 2003 (Dollars per Thousand Cubic Feet) Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: States where the electric power price has been withheld (see Table 23) are included in the $0.00-$1.99 price category.

394

C:\Annual\VENTCHAP.V8\NGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

2 2 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2002 (Dollars per Thousand Cubic Feet) Figure Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 2002 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost

395

NGA_99fin.vp  

Gasoline and Diesel Fuel Update (EIA)

9 9 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 16. Average Price of Natural Gas Delivered to U.S. Residential Consumers, 1999 (Dollars per Thousand Cubic Feet) Figure

396

C:\ANNUAL\VENTCHAP.V8\NGA.VP  

Gasoline and Diesel Fuel Update (EIA)

8 8 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 16. Average Price of Natural Gas Delivered to U.S. Residential Consumers, 1997 (Dollars per Thousand Cubic Feet) Figure

397

C:\ANNUAL\VENTCHAP.V8\NewNGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

2001 2001 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 28. Average Price of Natural Gas Delivered to U.S. Onsystem Residential Consumers, 2001 (Dollars per Thousand Cubic Feet) Figure 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition."

398

NGA98fin5.vp  

Gasoline and Diesel Fuel Update (EIA)

1998 1998 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 16. Average Price of Natural Gas Delivered to U.S. Residential Consumers, 1998 (Dollars per Thousand Cubic Feet) Figure

399

C:\ANNUAL\VENTCHAP.V8\NewNGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

2001 2001 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 30. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2001 (Dollars per Thousand Cubic Feet) Figure 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 31. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 2001 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of

400

NGA_99fin.vp  

Gasoline and Diesel Fuel Update (EIA)

9 9 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1999 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1999 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

C:\ANNUAL\VENTCHAP.V8\NGAla1109.vp  

Gasoline and Diesel Fuel Update (EIA)

Energy Energy Information Administration / Natural Gas Annual 2000 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ 17. Average Price of Natural Gas Delivered to U.S. Residential

402

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network (OSTI)

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

403

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

404

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

405

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

406

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Universit, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

407

Novel photoaffinity ligands for the GA-receptor  

SciTech Connect

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. (USDA/ARS Biosciences Research Laboratory, Fargo, ND (USA))

1990-05-01T23:59:59.000Z

408

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

409

Invited Paper GaAs/A1O photonic bandgap material fabrication and characterization  

E-Print Network (OSTI)

semiconductor crystals, photonic crystals do not occur naturally. There are, therefore, several seemingly direct bandgap semiconductors, such as GaAs, A1GaAs, InP, InGaAsP, etc., in which the radiative-dimensional photonic bandgaps for microwave and millimeter-wave radiation, and for shorter optical wavelengths in one

Zhou, Weidong

410

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network (OSTI)

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

411

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

412

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network (OSTI)

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

413

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network (OSTI)

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

414

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

415

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

416

Surface morphology and magnetic anisotropy in (Ga,Mn)As  

E-Print Network (OSTI)

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

S. Piano; X. Marti; A. W. Rushforth; K. W. Edmonds; R. P. Campion; O. Caha; T. U. Schulli; V. Holy; B. L. Gallagher

2010-10-01T23:59:59.000Z

417

Operating experience with a GaAs photoemission electron source  

SciTech Connect

We report on the development of several operating procedures that promise to make GaAs photoemission electron sources easier to construct, more reliable to operate, and more amenable to use in dynamic vacuum systems. We describe in particular a method for ''ohmically'' heating a <100> crystal of GaAs under vacuum to approximately 600 /sup 0/C. We also discuss our observations of the role of oxygen in the activation of the crystal surface, the use of continuous cesiation, and of the performance of the crystal under varying vacuum conditions.

Tang, F.C.; Lubell, M.S.; Rubin, K.; Vasilakis, A.; Eminyan, M.; Slevin, J.

1986-12-01T23:59:59.000Z

418

An investigation on reliable passivation of GaP  

E-Print Network (OSTI)

reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index... reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index...

Greaves King, Carlos A.

2012-06-07T23:59:59.000Z

419

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

420

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells  

Science Journals Connector (OSTI)

Dry etch induced damage of GaAs/InGaAs/GaAs heterostructures in an electron cyclotron resonance (ECR) argon discharge has been investigated as a function of additional radio frequency self?biasing of the sample and process pressure in argon ECR discharges. We used depth resolved photoluminescence measurements to determine the influence of the etch process on the samples. We observe a decreasing damage depth for smaller bias voltages reaching its lowest value of 1.7 nm at 20 V bias and a pressure of 0.15 Pa. For lower pressures we observe a strong increase of the damage which is attributed predominantly to high energetic vacuum ultraviolet radiation from the ECR region.

T. Bickl; B. Jacobs; J. Straka; A. Forchel

1993-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

422

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

423

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy  

Science Journals Connector (OSTI)

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As4 pressure. Additionally, due to the small As4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40?m.

C. Colombo; D. Spirkoska; M. Frimmer; G. Abstreiter; A. Fontcuberta i Morral

2008-04-28T23:59:59.000Z

424

Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures  

Science Journals Connector (OSTI)

The carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well heterostructures have been determined as a function of the incorporated compressive strain in the (GaIn)As quantum-well layer by applying magneto-optical studies. The precise structural parameters, i.e., individual layer thicknesses, strain values, and crystalline perfection, have been determined independently by high-resolution x-ray diffraction and transmission electron microscopy. By analyzing both the allowed and forbidden optical transitions as a function of the magnetic field, detected by polarization-dependent magnetophotoluminescence excitation spectroscopy, the exciton binding energy as well as the effective in-plane electron and heavy-hole masses have been determined quantitatively as a function of strain. The theoretically predicted significant decrease of the in-plane heavy-hole mass with increasing strain has been observed. The obtained results are discussed and compared with the contradictory results reported in the literature.

M. Volk; S. Lutgen; T. Marschner; W. Stolz; E. O. Gbel; P. C. M. Christianen; J. C. Maan

1995-10-15T23:59:59.000Z

425

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

426

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy  

SciTech Connect

We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial In{sub x}Ga{sub 1-x}As (x{approx}0.20) inserts with thicknesses from 36 to 220 nm with {+-}10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L. [Department of Electrical Engineering and California Nano-Systems Institute, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2010-12-13T23:59:59.000Z

427

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

428

Structure of negatively charged muonium in n-type GaAs  

Science Journals Connector (OSTI)

Muon level-crossing resonance and muon-spin-rotation measurements on heavily doped n-type GaAs:Si and GaAs:Te show that the majority of positive muons implanted at room temperature form an isolated diamagnetic muonium center located at a high-symmetry site with Ga neighbors along the ?111? direction(s). These experiments, together with theoretical considerations, imply that negatively charged muonium is at or near the tetrahedral interstitial site with four Ga nearest-neighbor atoms. Except for zero-point energy differences, these results should model negatively charged isolated hydrogen in GaAs.

K.H. Chow; R.F. Kiefl; W.A. MacFarlane; J.W. Schneider; D.W. Cooke; M. Leon; M. Paciotti; T.L. Estle; B. Hitti; R.L. Lichti; S.F.J. Cox; C. Schwab; E.A. Davis; A. Morrobel-Sosa; L. Zavieh

1995-05-15T23:59:59.000Z

429

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network (OSTI)

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

430

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network (OSTI)

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

431

Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy  

SciTech Connect

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.

Titus, J.; Perera, A. G. U. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)] [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Nguyen, H. P. T.; Mi, Z. [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)] [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)

2013-03-25T23:59:59.000Z

432

GA103 a microprogrammable processor for online filtering  

E-Print Network (OSTI)

GA103 is a 16 bit microprogrammable processor, which emulates the PDP 11 instruction set. It is based on the Am2900 slices. It allows user- implemented microinstructions and addition of hardwired processors. It will perform online filtering tasks in the NA14 experiment at CERN, based on the reconstruction of transverse momentum of photons detected in a lead glass calorimeter. (3 refs).

Calzas, A; Danon, G

1981-01-01T23:59:59.000Z

433

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network (OSTI)

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

434

Response of GaAs to fast intense laser pulses  

E-Print Network (OSTI)

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

435

Recombination in Low-Bandgap InGaAs  

SciTech Connect

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

436

High-quality InP on GaAs  

E-Print Network (OSTI)

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

437

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

438

Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP  

E-Print Network (OSTI)

This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

1997-01-01T23:59:59.000Z

439

Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices  

E-Print Network (OSTI)

of thermoelectric energy conversion devices depends on the thermoelectric figure of merit ZT of a material, which- troduced charge carriers in the ErAs:InGaAs regions of 0, 2 1018 , 4 1018 , and 8 1018 cm-3 , respectively. There- fore, the effective carrier concentrations in the four samples were 2 1018 , 4 1018 , 6 1018

440

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a  

E-Print Network (OSTI)

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C Richard R. King,2 and Harry A. Atwater1 1 California Institute of Technology, Pasadena, California 91125, USA 2 Spectrolab, Inc., Sylmar, California 91342, USA 3 Aonex Technologies, Pasadena, California 91106

Atwater, Harry

442

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS  

E-Print Network (OSTI)

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In

Atwater, Harry

443

The evolution of Ga and As core levels in the formation of Fe/GaAs (001):A high resolution soft x-ray photoelectron spectroscopic study  

SciTech Connect

A high resolution soft x-ray photoelectron spectroscopic study of Ga and As 3d core levels has been conducted for Fe/GaAs (001) as a function of Fe thickness. This work has provided unambiguous evidence of substrate disrupting chemical reactions induced by the Fe overlayer--a quantitative analysis of the acquired spectra indicates significantly differing behavior of Ga and As during Fe growth, and our observations have been compared with existing theoretical models. Our results demonstrate that the outdiffusing Ga and As remain largely confined to the interface region, forming a thin intermixed layer. Whereas at low coverages Fe has little influence on the underlying GaAs substrate, the onset of substrate disruption when the Fe thickness reaches 3.5 Angstrom results in major changes in the energy distribution curves (EDCs) of both As and Ga 3d cores. Our quantitative analysis suggests the presence of two additional As environments of metallic character: one bound to the interfacial region and another which, as confirmed by in situ oxidation experiments, surface segregates and persists over a wide range of overlayer thickness. Analysis of the corresponding Ga 3d EDCs found not two, but three additional environments--also metallic in nature. Two of the three are interface resident whereas the third undergoes outdiffusion at low Fe coverages. Based on the variations of the integrated intensities of each component, we present a schematic of the proposed chemical makeup of the Fe/GaAs (001) system.

Thompson, Jamie; Neal, James; Shen, Tiehan; Morton, Simon; Tobin, James; Waddill, George Dan; Matthew, Jim; Greig, Denis; Hopkinson, Mark

2008-07-14T23:59:59.000Z

444

Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers  

Science Journals Connector (OSTI)

We investigate spectra of InGaN/GaN quantum well (QW) light-emitting diode (LED) structures with heavily doped barriers at different excitation levels. We model the spectral shape and energy position in frames of dominating mechanism of free electron ... Keywords: Band filling, Doped barriers, Emission spectra, Quantum well

B. Arnaudov; D. S. Domanevskii; S. Evtimova; Ch. Ivanov; R. Kakanakov

2009-02-01T23:59:59.000Z

445

Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes  

Science Journals Connector (OSTI)

We report on the important role played by internal quantum well (QW) fields in the anomalous inversion of capacitance transients in InGaN/GaN multi-QW light-emitting diodes (LEDs). This effect was observed by deep-level transient spectroscopy (DLTS) ... Keywords: Deep level, III-Nitride, Internal fields, Quantum well

L. Rigutti; A. Castaldini; A. Cavallini

2009-02-01T23:59:59.000Z

446

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Journals Connector (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung; Keun Man Song; Young Su Choi; Hyeong-Ho Park; Hyun-Beom Shin; Ho Kwan Kang; Jaejin Lee

2013-01-01T23:59:59.000Z

447

Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields  

Science Journals Connector (OSTI)

A theoretical study of the direct and indirect exciton states in GaAs/Ga1-xAlxAs coupled double quantum wells under crossed electric and magnetic fields is presented. The setup of the system under consideration consists of an ... Keywords: 71.55.Eq, 73.20.Mf, 73.21.Fg, Diamagnetic shifts, Double quantum-wells, Magnetoexcitons

L. E. Oliveira; M. de Dios-Leyva; C. A. Duque

2008-03-01T23:59:59.000Z

448

Exciton diamagnetic shift in GaAs/Ga1-xAlxAs quantum wells under in-plane magnetic fields  

Science Journals Connector (OSTI)

Using a variational procedure in the effective-mass and parabolic-band approximations we investigate the effects of in-plane magnetic fields on the exciton states in single GaAs/Ga1-xAlxAs quantum wells. Exciton properties ... Keywords: 71.55.Eq, 73.20.Mf, 73.21.Fg, Diamagnetic shifts, Magnetoexcitons, Quantum wells

C. A. Duque; M. de Dios-Leyva; L. E. Oliveira

2008-03-01T23:59:59.000Z

449

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum  

Science Journals Connector (OSTI)

The fission neutron spectrum averaged cross-sections for the reactions70Ge(n,p)70Ga and74Ge(n,p)74Ga have been determined. The averages of four determinations are, respectively, (3.100.30) mb and (0.009380.0005...

I. M. Cohen; A. J. Kestelman; J. C. Furnari

1996-03-14T23:59:59.000Z

450

Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate  

SciTech Connect

Simultaneous growth of ?111?{sub B} free-standing and [110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111){sub B} interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111){sub B} interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111){sub B} interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

Sun, Wen; Xu, Hongyi [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia)] [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Guo, Yanan [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)] [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Zou, Jin, E-mail: j.zou@uq.edu.au [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia QLD 4072 (Australia)

2013-11-25T23:59:59.000Z

451

Dynamic Model of Hydrogen in GaN  

NLE Websites -- All DOE Office Websites (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

452

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy  

SciTech Connect

Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Yu, K. M.; Walukiewicz, W. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)] [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kudrawiec, R. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland); Luce, A. V. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Ting, M. [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)] [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2013-03-18T23:59:59.000Z

453

Ga configurations in hydrogenated amorphous silicon as studied by x-ray photoemission spectroscopy  

Science Journals Connector (OSTI)

Samples of crystalline silicon and glow-discharge-deposited hydrogenated amorphous silicon were doped with gallium by low-energy (4-keV) ion implantation. X-ray photoemission spectroscopy was used to study the chemical-bonding states of the Ga. From Ga 3d core-level studies, we found that elementary interstitial, threefold-coordinated, and fourfold-coordinated Ga coexist in the ion-implanted and annealed amorphous silicon network. The percentage of activated threefold- and fourfold-coordinated Ga atoms is found to increase with increasing annealing temperature, prior to crystallization. The energy released by the amorphous silicon lattice upon annealing contributes to the activation of the gallium from the elementary state to the threefold- or fourfold-coordinated state. No evidence of Ga-H bond formation is found. The percentage of fourfold-coordinated Ga, which we call the doping efficiency, ranges from 5% to 10%, depending upon the thermal treatment.

Z. H. Lu; S. Poulin-Dandurand; E. Sacher; A. Yelon

1990-09-15T23:59:59.000Z

454

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network (OSTI)

Mason Carroll, B. S. , Rose-Hulman Institute of Technology Chair of Advisory Committee: Dr. Kai Chang Microstrip transmission lines are widely used in microv, ave circuits. The high frequencies cause the microstrip characteristics, especially... OF CONTENTS . . LIST OF FIGURES LIST OF TABLES. . CHAPTER I INTRODUCTION . . I. A Introduction. I. B Thesis Research Il GaAs MICROSTRlp ATTENUATION . II. A Characterization ol'Transmission Line Attenuation. . . . II. A. I Introduction. II. A. 2...

Carroll, James Mason

2012-06-07T23:59:59.000Z

455

InGaAsSb thermophotovoltaic diode physics evaluation  

SciTech Connect

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

1998-06-01T23:59:59.000Z

456

(22) reconstructions of the {111} polar surfaces of GaAs  

Science Journals Connector (OSTI)

Ab initio total-energy calculations were used to examine (22) reconstruction models for the (111) and (111) surfaces of GaAs. For the (111) surface the lowest-energy Ga-vacancy geometry is determined; several mechanisms for Ga-vacancy formation are examined and other reconstructions are discussed. For the (111) surface it is shown that the As-vacancy model is unlikely and other geometries are considered.

E. Kaxiras; Y. Bar-Yam; J. D. Joannopoulos; K. C. Pandey

1986-03-15T23:59:59.000Z

457

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions  

Science Journals Connector (OSTI)

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions ... 9-19 In most cases, an alkaline earth metal is introduced into a Na melt to enhance the solubility of nitrogen, and is incorporated in the nitride product. ... The container was sealed by welding its open end in an argon atmosphere with active water-cooling so that NaN3 did not decompose due to heating during the welding. ...

Dong Gon Park; Zoltn A. Gl; Francis J. DiSalvo

2003-02-13T23:59:59.000Z

458

Ga[sub 13], Al[sub 13], GaAl[sub 12], and chromium-pillared montmorillonites: Acidity and reactivity for cumene conversion  

SciTech Connect

A comparison has been made of the acidic characters of a series of metal polyoxocation pillar interlayered clay minerals (M-PILCs) by studying the infrared spectra of adsorbed pyridine. These comparisons were made for Ga[sub 13]-, Al[sub 13]- and GaAl[sub 12]-PILCs, and for Na[sup +]-exchanged montmorillonite (Na-STx-1). The Ga[sub 13]-PILC, was found to exhibit the strongest Lewis acid sites, followed by the AL[sub 13]-, and GaAl[sub 12]-PILCs and then by the Ns-STx-1. The relative number of Lewis acid sites, however, was found to be much greater for the GaAl[sub 12]-PILC, particularly after calcination at higher temperatures, indicating that the Ga[sub 13] Lewis acid sites did not have as high a thermal stability. The Broensted acidic characters for the pillared clays depend on the pillar, and follow the general decreasing order of abundance of GaAl[sub 12]-, Al[sub 13], and Ga[sub 13]-PILC when expressed as absorbance per unit mass. When the acidities per unit surface area were estimated, however, the Ga[sub 13]-PILCs were found to have the greatest number. This indicated that while the pillars contribute to the PILC acidities primarily through increasing the exposed phyllosilicate sheet surface areas, there is also a significant effect arising from the acidic characters of the pillars themselves. The dehydrogenation activities of Ga[sub 13]-, GaAl[sub 12]-, Al[sub 13]-, and Na-STx-1, in addition to a chromium polyoxocation-PILC, were compared by observing the products formed upon reaction with the model compound cumene. The Ga[sub 13]- and chromium-PILCs and the Na-Stx-1 exhibited almost exclusively dehydrogenation activities, whereas the Al[sub 13]- and GaAl[sub 12]-PILCs exhibited both cracking and dehydrogenation behaviors. These results prove that the pillars themselves can very strongly effect the catalytic activities of the PILCs. 3 refs., 6 figs., 2 tabs.

Bradley, S.M.; Kydd, R.A. (Univ. of Calgary, Alberta (Canada))

1993-05-01T23:59:59.000Z

459

Carrier-induced change in refractive index of InP, GaAs, and InGaAsP  

SciTech Connect

The authors have theoretically estimated the change in refractive index {Delta}{ital n} produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 10{sup 16}/cm{sup 3} to 10{sup 19}/cm{sup 3} and photon energies of 0.8 to 2.0 eV were considered. Predictions of {Delta}{ital n} are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10{sup {minus} 2} are predicted for carrier concentrations of 10{sup 18}/cm{sup 3}, suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials.

Bennett, B.R. (Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (US)); Soref, R.A. (Solid State Sciences Directorate, Rome Air Development Center, Hanscom Air Force Base, Bedford, MA (US)); Del Alamo, J.A. (Dept. of Electrical Engineering and Computer Science, Massachussets Institute of Technology, Cambridge, MA (US))

1990-01-01T23:59:59.000Z

460

Photoluminescence kinetics of indirect excitons in GaAs/AlxGa1-xAs coupled quantum wells  

Science Journals Connector (OSTI)

Photoluminescence (PL) kinetics of long-lifetime indirect excitons in a GaAs/AlxGa1-xAs coupled quantum well characterized by a small in-plane random potential was studied at temperatures 1.5<~T<~15 K for a wide range of exciton densities. Strong deviations of the indirect exciton PL kinetics from monoexponential PL rise/decay were observed at low temperatures and high exciton densities. In particular, right after the excitation is switched off, the spectrally integrated indirect exciton PL intensity increased sharply. Simultaneously, the indirect exciton energy distribution was observed to narrow significantly. The observed increase in intensity is attributed to the sharp increase of occupation of the optically active exciton states. The energy distribution narrowing is explained in terms of the phonon mediated exciton energy relaxation in momentum space and in the in-plane random potential.

L. V. Butov, A. Imamoglu, A. V. Mintsev, K. L. Campman, and A. C. Gossard

1999-01-15T23:59:59.000Z

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Sensitivity of absorption spectra to surface segregation in InGaN/GaN quantum well structures  

SciTech Connect

We investigate the influence of the indium surface segregation on absorption spectra in InGaN/GaN quantum well structures having different indium amount. Results of the mathematical modeling show that such influence is more pronounced in quantum well structures with high indium amounts. The origin of this effect is related to the interplay between the indium surface segregation and internal electrostatic fields. Our theoretical analysis is performed using semiconductor Bloch equations within the Hartree-Fock approximation including into consideration excitonic effects. Results of the global sensitivity analysis evidence that the influence of the indium surface segregation is less than one order of magnitude in comparison with the impact of the quantum-well width and indium molar fraction. Also, the influence of the indium surface segregation is not the same for each interface of the quantum well.

Klymenko, M. V.; Shulika, O. V. [Lab. Photonics, Kharkov National University of Radio Electronics, Kharkov, 61166 (Ukraine); Sukhoivanov, I. A. [Department of Electronics, Engineering Division, University of Guanajuato, Salamanca, Guanajuato, 36885 (Mexico)

2014-05-15T23:59:59.000Z

462

Band offsets from two special GaAs-AlxGa1-xAs quantum-well structures  

Science Journals Connector (OSTI)

Half-parabolic quantum wells and two-stepped quantum wells have been grown by molecular-beam epitaxy with the GaAs-AlxGa1-xAs system and investigated by photoluminescence techniques to determine the band offsets at the heterointerfaces. Both structures provide interband transitions that are sensitive to the partitioning of the energy-gap discontinuity ?Eg=?Ec+?Ev between the conduction and valence bands. It is concluded that the data require valence-band offsets ?Ev equal to 38% and 41% of ?Eg for the half-parabolic wells and the two-stepped wells, respectively. These band offsets are therefore in agreement with the trend of other recent determinations.

R. C. Miller; A. C. Gossard; D. A. Kleinman

1985-10-15T23:59:59.000Z

463

ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures  

SciTech Connect

Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65-150 mJ/cm{sup 2} allowed to generate an array of 1.2x1 mm{sup 2} sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.

Genest, Jonathan; Beal, Romain; Aimez, Vincent; Dubowski, Jan J. [Department of Electrical and Computer Engineering, Center of Excellence for Information Engineering, Universite de Sherbrooke, Sherbrooke, Quebec J1K 2R1 (Canada)

2008-08-18T23:59:59.000Z

464

E-Print Network 3.0 - algorithm ga technique Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

for: algorithm ga technique Page: << < 1 2 3 4 5 > >> 1 GAMMA: Global Arrays Meets MATLAB Rajkiran Panuganti Summary: is a straightforward implementa- tion of a standard...

465

Band-structure analysis from photoreflectance spectroscopy in (Ga,Mn)As  

SciTech Connect

Modulation photoreflectance spectroscopy has been applied to study the band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn content. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy in the (Ga,Mn)As layers with increasing Mn content are interpreted in terms of a disordered valence band, extended within the band gap, formed, in highly Mn-doped (Ga,Mn)As, as a result of merging the Mn-related impurity band with the host GaAs valence band.

Yastrubchak, Oksana; Gluba, Lukasz; Zuk, Jerzy [Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin (Poland); Wosinski, Tadeusz; Andrearczyk, Tomasz; Domagala, Jaroslaw Z. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Sadowski, Janusz [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland and MAX-Lab, Lund University, 22100 Lund (Sweden)

2013-12-04T23:59:59.000Z

466

Assessment of the Passivation Capabilities of Two Different Covalent Chemical Modifications on GaP(100)  

Science Journals Connector (OSTI)

With respect to toxicity, the UDA-functionalized GaP provided better passivation which was confirmed by less gallium leaching into water and saline solutions. ... Due to its promising characteristics for device fabrication, gallium arsenide (GaAs) has been extensively studied and the formation of self-assembled monolayers has been of interest. ... A general increase in the Ga/P ratio can be seen in the surfaces exposed to solutions compared to the clean surface which is attributed to the greater solubility of the phosphorus oxide (P2O5) compared to the gallium oxide (Ga2O3). ...

David Richards; Dmitry Zemlyanov; Albena Ivanisevic

2010-02-03T23:59:59.000Z

467

Interface Reactions and Electrical Characteristics of Au/GaSb Contacts  

SciTech Connect

The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

H. Ehsani; R.J. Gutmann; G.W. Charache

2000-07-07T23:59:59.000Z

468

Si in GaN -- On the nature of the background donor  

SciTech Connect

A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25 GPa the authors study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. The authors find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples.

Wetzel, C.; Chen, A.L.; Suski, T.; Ager, J.W. III; Walukiewicz, W. [Lawrence Berkeley National Lab., CA (United States). Materials Science Div.

1996-08-01T23:59:59.000Z

469

Structural defects in GaN revealed by Transmission Electron Microscopy  

SciTech Connect

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Liliental-Weber, Zuzanna

2014-04-18T23:59:59.000Z

470

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics  

Science Journals Connector (OSTI)

An n++-GaAs/p++-AlGaAs tunnel junction with a peak current density of 10?100Acm?2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10?000suns is below 5mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500Acm?2 and a voltage drop at 10?000suns of around 20mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

I Garca; I Rey-Stolle; C Algora

2012-01-01T23:59:59.000Z

471

Growth of 5 mm GaN Single Crystals at 750 C from an Na?Ga Melt  

Science Journals Connector (OSTI)

Laser diodes using GaN-based III?V nitrides have been developed, and nitride semiconductor devices are now of considerable interest. ... When the inclusions were exposed to air, they reacted with water vapor in air and produced sodium hydroxide and small gallium metal droplets at the fracture surface of the crystal. ... The solubility of nitrogen in liquid sodium is extremely low (7.1 10-9 mol % N at 600 C). ...

Masato Aoki; Hisanori Yamane; Masahiko Shimada; Seiji Sarayama; Francis J. DiSalvo

2001-02-03T23:59:59.000Z

472

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

473

Local indium segregation and band structure in high efficiencygreen light emitting InGaN/GaN diodes  

SciTech Connect

GaN/InGaN light emitting diodes (LEDs) are commercialized for lighting applications because of the cost efficient way that they produce light of high brightness. Nevertheless, there is significant room for improving their external emission efficiency from typical values below 10 percent to more than 50 percent, which are obtainable by use of other materials systems that, however, do not cover the visible spectrum. In particular, green-light emitting diodes fall short in this respect, which is troublesome since the human eye is most sensitive in this spectral range. In this letter advanced electron microscopy is used to characterize indium segregation in InGaN quantum wells of high-brightness, green LEDs (with external quantum efficiency as high as 15 percent at 75 A/cm2). Our investigations reveal the presence of 1-3 nm wide indium rich clusters in these devices with indium concentrations as large as 0.30-0.40 that narrow the band gap locally to energies as small as 2.65 eV.

Jinschek, Joerg R.; Erni, Rolf; Gardner, Nathan F.; Kim, AndrewY.; Kisielowski, Christian

2004-11-23T23:59:59.000Z

474

Deep Levels in p-Type InGaAsN Lattice Matched to GaAs  

SciTech Connect

Deep level transient spectroscopy (DLTS) measurements were utilized to investigate deep level defects in metal-organic chemical deposition (MOCVD)-grown unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the bandgap, with a dominant hole trap at E{sub v} + 0.10 eV. Post-growth annealing simplified the deep level spectra, enabling the identification of three distinct hole traps at 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge, with concentrations of 3.5 x 10{sup 14} cm{sup {minus}3}, 3.8 x 10{sup 14} cm{sup {minus}3}, and 8.2 x 10{sup 14} cm{sup {minus}3}, respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4 x 10{sup 14} cm{sup {minus}3} in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future.

Allerman, A.A.; Jones, E.D.; Kaplar, R.J.; Kurtz, S.R.; Kwon, D.; Ringel, S.A.

1999-03-02T23:59:59.000Z

475

Avalanche buildup time of an InP/InGaAsP/InGaAs APD at high gain  

SciTech Connect

Under a high-gain operating condition, the presence of a multiplication process in the InGaAs(P) regions of an InP/InGaAsP/InGaAs avalanche photodiode having a structure of separated absorption and multiplication regions (SAM-APD) could lead to significant enhancement of the avalanche buildup time. As a result, the bandwidth of the device could be reduced considerably. The dependence of the avalanche multiplication factor and the intrinsic response time on the reverse bias voltage, the heterointerface field, the doping concentrations, and the width of the InP layer are examined in detail for the case in which hole injection is assumed. It is shown, for example, that for a fixed value of doping concentrations, the reduction of the excess noise factor and the enhancement of the gain-bandwidth product of the device can be made at the same time by a proper increase of the width of the InP layer.

Hsieh, H.C.; Sargeant, W. (Iowa State Univ. of Science and Technology, Ames, IA (USA). Dept. of Electrical Engineering)

1989-09-01T23:59:59.000Z

476

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

477

ZERH Training Session: Syracuse, NY  

Energy.gov (U.S. Department of Energy (DOE))

The DOE Zero Energy Ready Home is a high performance home which is so energy efficient, that a renewable energy system can offset all or most of its annual energy Consumption.US DOE Zero Energy...

478

ny_50m_wind  

NLE Websites -- All DOE Office Websites (Extended Search)

Metadata also available as Metadata: IdentificationInformation DataQualityInformation SpatialDataOrganizationInformation SpatialReferenceInformation EntityandAttributeI...

479

Ny teknik fr smskalig kraftvrme.  

E-Print Network (OSTI)

?? As a part of the fight against the global warming the energy production needs to be more efficient and redirected towards sustainable options. One (more)

Eriksson, sa

2009-01-01T23:59:59.000Z

480

Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate  

E-Print Network (OSTI)

-Queisser limit6 for the solar-cell efficiency. Recently, NWs of various semi- conductors such as GaAs/AlGaAs,7

Southern California, University of

Note: This page contains sample records for the topic "ga fl ny" from the National Library of EnergyBeta (NLEBeta).
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481

IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 4, APRIL 2006 397 Design and Performance of an InGaAsInP  

E-Print Network (OSTI)

, focusing on the effect of the critical InGaAsP grading layer between the narrow-gap InGaAs absorption layer

Buller, Gerald S.

482

Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions  

SciTech Connect

This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

Piprek, Joachim, E-mail: piprek@nusod.org [NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

2014-02-03T23:59:59.000Z

483

Enhancing the Light Extraction of InGaN Light-Emitting Diodes by Patterning the Dicing Streets  

Science Journals Connector (OSTI)

Patterning the dicing streets technology was used to define the high extraction efficiency region of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The external quantum...

Lin, Hung Cheng; Tseng, Yen Chun; Chyi, Jen Inn; Lee, Chia Ming

484

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P  

E-Print Network (OSTI)

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P An Chen1,a-bandgap semiconductor AlxGa1-xP is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on Al0.5Ga0.5P epitaxial layer grown lattice matched on GaP substrate by molecular

Woodall, Jerry M.

485

IEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array  

E-Print Network (OSTI)

2.3-m laser. Al Ga As Sb cladding layers. Details of the lasers' heterostructure design can be foundIEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array L. Shterengas, G--High-power 2.3- m In(Al)GaAsSb­GaSb type-I double quantum-well diode laser arrays were fabricated

486

Analyzing the Performance of a Multiobjective GA-P Algorithm for Learning Fuzzy Queries in  

E-Print Network (OSTI)

Analyzing the Performance of a Multiobjective GA-P Algorithm for Learning Fuzzy Queries in a Machine Learning Environment Oscar Cord´on1 , Enrique Herrera-Viedma1 , Mar´ia Luque1 , F´elix de Moya2- tionary algorithms (EAs) [1], such as genetic algorithm-programming (GA-P) [11] or simulated annealing

Fernandez, Thomas

487

Modeling of InAs/GaAs Quantum Dot Solar Cells  

Science Journals Connector (OSTI)

This paper reports electrical characteristics of an intermediate band p-i-n GaAs solar cell with InAs quantum dots embedded in the intrinsic region using Synopsis TCAD simulation tools. Up to five layers of quantum dots have been taken into consideration ... Keywords: Quantum dots, Intermediate band, InAs, GaAs, Solar Cells, TCAD

Ayman Rizk; Kazi Islam; Ammar Nayfeh

2013-11-01T23:59:59.000Z

488

2=picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications  

E-Print Network (OSTI)

2=picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications K. D. Li GaAs Schottky photodiode is monolithically integrated with a microwave detector. By using this new optoelectronic circuit.in place of a nonlinear crystal in an optical correlation setup, the high-speed photodiode

Ozbay, Ekmel

489

Ultralow noise midwave infrared InAsGaSb strain layer superlattice avalanche photodiode  

E-Print Network (OSTI)

Ultralow noise midwave infrared InAs­GaSb strain layer superlattice avalanche photodiode InAs­GaSb strain layer superlattice p+ -n- -n homojunction avalanche photodiodes APDs grown by solid characteristics. © 2007 American Institute of Physics. DOI: 10.1063/1.2817608 Photodiodes operating in the eye

Krishna, Sanjay

490

14 MHz rate photon counting with room temperature InGaAs/InP avalanche photodiodes  

E-Print Network (OSTI)

14 MHz rate photon counting with room temperature InGaAs/InP avalanche photodiodes PAUL L. VOSS based on InGaAs/InP avalanche photodiodes for use at 1.55 mm wavelength. Operation at room temperature at the above wavelengths for conventional high light-level measurements with PIN or ava- lanche photodiodes

Köprülü, Kahraman Güçlü

491

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network (OSTI)

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

492

Resonant Raman scattering in an InAs/GaAs monolayer structure  

E-Print Network (OSTI)

), embedded in bulklike GaAs with two Al- GaAs cladding layers forming a waveguide. The InAs- mono- layer system used. Raman spectra were excited with a Ti-Sapphire laser, tuned from 1.41 eV to 1.435 e

Nabben, Reinhard

493

Electro-optic imagery of high-voltage GaAs photoconductive switches  

SciTech Connect

The authors present electro-optic images of GaAs high-voltage photoconductive switches utilizing the electro-optic effect of the semi-insulating GaAs substrate. Experimental methodology for obtaining the images is described along with a self-calibrating data reduction algorithm. Use of the technique for observing fabrication defects is shown.

Falk, R.A.; Adams, J.C.; Capps, C.D.; Ferrier, S.G.; Krinsky, J.A. (Boeing Defense and Space Group, Seattle, WA (United States))

1995-01-01T23:59:59.000Z

494

Variation of lattice constant and cluster formation in GaAsBi  

SciTech Connect

We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs at substrate temperatures between 220315 C. Irrespective of the growth temperature, the structures exhibited similar Bi compositions, and good overall crystal quality as deduced from X-Ray diffraction measurements. After thermal annealing at temperatures as low as 500 C, the GaAsBi layers grown at the lowest temperatures exhibited a significant reduction of the lattice constant. The lattice variation was significantly larger for Bi-containing samples than for Bi-free low-temperature GaAs samples grown as a reference. Rutherford backscattering spectrometry gave no evidence of Bi diffusing out of the layer during annealing. However, dark-field and Z-contrast transmission electron microscopy analyses revealed the formation of GaAsBi clusters with a Bi content higher than in the surrounding matrix, as well as the presence of metallic As clusters. The apparent reduction of the lattice constant can be explained by a two-fold process: the diffusion of the excess As incorporated within As{sub Ga} antisites to As clusters, and the reduction of the Bi content in the GaAs matrix due to diffusion of Bi to GaAsBi clusters. Diffusion of both As and Bi are believed to be assisted by the native point defects, which are present in the low-temperature as-grown material.

Puustinen, J.; Schramm, A.; Guina, M. [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland)] [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland); Wu, M.; Luna, E. [Paul-Drude Institut fr Festkrperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)] [Paul-Drude Institut fr Festkrperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Laukkanen, P. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)] [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Laitinen, M.; Sajavaara, T. [Department of Physics, University of Jyvskyl, P.O. Box 35, FI-40014 Jyvskyl (Finland)] [Department of Physics, University of Jyvskyl, P.O. Box 35, FI-40014 Jyvskyl (Finland)

2013-12-28T23:59:59.000Z

495

ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission  

E-Print Network (OSTI)

ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission angle Emily D Kosten1 solar cell under direct sunlight, light is received from the solar disk, but is re-emitted isotropically.1038/lsa.2013.1; published online 4 January 2013 Keywords: detailed balance; GaAs solar cell; light

Atwater, Harry

496

Plasmonic nanoparticle enhanced light absorption in GaAs solar cells Keisuke Nakayama,a  

E-Print Network (OSTI)

Plasmonic nanoparticle enhanced light absorption in GaAs solar cells Keisuke Nakayama,a Katsuaki 22 September 2008 We demonstrate an improvement in efficiency of optically thin GaAs solar cells-ratio nanoparticles effectively increases the optical path of the incident light in the absorber layers resulting

Atwater, Harry

497

Calculated spin polarization of field-assisted GaAs electron source  

Science Journals Connector (OSTI)

Calculations are reported showing that for the field-assisted GaAs NEA photocathode, the spin polarization of emitted electrons can be 3.6 times higher than for non-field GaAs sources. The reason for this is that...

B. Yang; V. Guidi; L. Tecchio

1993-02-01T23:59:59.000Z

498

Coupling of nitrogen-vacancy centers in diamond to a GaP waveguide  

E-Print Network (OSTI)

The optical coupling of guided modes in a GaP waveguide to nitrogen-vacancy (NV) centers in diamond is demonstrated. The electric field penetration into diamond and the loss of the guided mode are measured. The results indicate that the GaP-diamond system could be useful for realizing coupled microcavity-NV devices for quantum information processing in diamond.

K. -M. C. Fu; C. Santori; P. E. Barclay; I. Aharonovich; S. Prawer; N. Meyer; A. M. Holm; R. G. Beausoleil

2008-11-03T23:59:59.000Z

499