Sample records for ga everett ma

  1. 24 Everett Street Cambridge, MA 02138

    E-Print Network [OSTI]

    Gunawardena, Jeremy

    is disrupted during inflammatory bowel disease. Industry Experience 06/2014 - 08/2014 Software Developer, futures, swaps, and other exotic energy and agricultural derivatives. Implemented arbitrage-free Monte by using large datasets to quantify historic risk and propose new investment strategies. Publications T

  2. Everett, MA Liquefied Natural Gas Total Imports (Million Cubic Feet)

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion2,12803 Table A1. Refiner/Reseller MotorImports From YemenTotal

  3. ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY M.A. Contreras, 2

    E-Print Network [OSTI]

    Sites, James R.

    of the deposition rate control. Figure 1. Total-area current-voltage data for MgF2/ZnO/ZnS(O,OH)/CIGS/Mo solar cellZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY 1 M.A. Contreras, 2 T. Nakada, 2 M of 18.6% for Cu(In,Ga)Se2 solar cells that incorporate a ZnS(O,OH) buffer layer as an alternative to Cd

  4. A Theological Argument for an Everett Multiverse

    E-Print Network [OSTI]

    Don N. Page

    2012-12-21T23:59:59.000Z

    Science looks for the simplest hypotheses to explain observations. Starting with the simple assumption that {\\em the actual world is the best possible world}, I sketch an {\\it Optimal Argument for the Existence of God}, that the sufferings in our universe would not be consistent with its being alone the best possible world, but the total world could be the best possible if it includes an omnipotent, omniscient, omnibenevolent God who experiences great value in creating and knowing a universe with great mathematical elegance, even though such a universe has suffering. God seems loathe to violate elegant laws of physics that He has chosen to use in His creation, such as Maxwell's equations for electromagnetism or Einstein's equations of general relativity for gravity within their classical domains of applicability, even if their violation could greatly reduce human suffering (e.g., from falls). If indeed God is similarly loathe to violate quantum unitarity (though such violations by judicious collapses of the wavefunction could greatly reduce human suffering by always choosing only favorable outcomes), the resulting unitary evolution would lead to an Everett multiverse of `many worlds', meaning many different quasiclassical histories beyond the quasiclassical history that each of us can observe over his or her lifetime. This is a theological argument for one reason why God might prefer to create a multiverse much broader than what one normally thinks of for a history of the universe.

  5. MA 41600

    E-Print Network [OSTI]

    MA 41600 164 - Textbook: Probability, Jim Pitman; MA 41600 165 - Textbook: A First Course in Probability, Sheldon M. Ross; MA 41600 165 - Textbook: ...

  6. Classical Anthropic Everett model: indeterminacy in a preordained multiverse

    E-Print Network [OSTI]

    Brandon Carter

    2012-03-05T23:59:59.000Z

    Although ultimately motivated by quantum theoretical considerations, Everett's many-world idea remains valid, as an approximation, in the classical limit. However to be applicable it must in any case be applied in conjunction with an appropriate anthropic principle, whose precise formulation involves an anthropic quotient that can be normalised to unity for adult humans but that would be lower for infants and other animals. The outcome is a deterministic multiverse in which the only function of chance is the specification of one's particular identity.

  7. EVERETT L. REDMOND II Senior Director, Policy Development

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy Chinaof EnergyImpactOn July 2, 2014 in theGroup Report | DepartmentDepartmentEVERETT

  8. MA 17300

    E-Print Network [OSTI]

    MA 17300 011 - UNIV 117 MWF 12:30pm - McReynolds, David (MATH 704); MA 17300 012 - REC 114 TR 12:30pm - Steiner, Avram (MATH 739); MA 17300 ...

  9. MA 35100

    E-Print Network [OSTI]

    MA 35100 001 - REC 121 MWF 08:30am - Baudoin, Fabrice (MATH 438); MA 35100 004 - UNIV 001 MWF 10:30am - Mcreynolds, David (MATH 704); MA 35100 ...

  10. MA 59800

    E-Print Network [OSTI]

    ... MA 59800 518 - REC 309 M 03:30pm - McReynolds, David (MATH 704); MA 59800 519 - MATH 215 R 04:00pm - McReynolds, David (MATH 704); MA 59800

  11. MA 59800

    E-Print Network [OSTI]

    ... MA 59800 014 - UNIV 101 TR 10:00am - Weigel, Peter (MATH 1046); MA 59800 016 - MATH 205 TR 02:30pm - McReynolds, David (MATH 704); MA 59800 ...

  12. MA 59800

    E-Print Network [OSTI]

    ... MA 59800 013 - REC 225 MW 10:00am - Hora, Raphael (MATH 441); MA 59800 018 - UNIV 301 TR 01:00pm - McReynolds, David (MATH 704); MA 59800

  13. MA 66100

    E-Print Network [OSTI]

    Prerequisite: MA 54400, 55400. Typically offered Fall Spring Summer. Instructor Info. MA 66100 001 - MATH 215 TR 09:00am - McReynolds, David (MATH 704) ...

  14. The End of the Many-Worlds? (or Could we save Everett's interpretation)

    E-Print Network [OSTI]

    A. Drezet

    2015-03-03T23:59:59.000Z

    This is a manuscript to be published as a book chapter. The text summarizes some of my critics concerning Everett's theory as seen from the perspective of a Bohmian. This is the second draft and comments are still welcome.

  15. Everett, MA Liquefied Natural Gas Imports From Yemen (Million Cubic Feet)

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion2,12803 Table A1. Refiner/Reseller MotorImports From Yemen

  16. Everett, MA Natural Gas LNG Imports (Price) From Yemen (Dollars per

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion2,12803 Table A1. Refiner/Reseller MotorImports From

  17. Everett, MA Natural Gas LNG Imports (Price) From Yemen (Dollars per

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion2,12803 Table A1. Refiner/Reseller MotorImports FromThousand

  18. Everett, MA Natural Gas Liquefied Natural Gas Imports from Trinidad and

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion2,12803 Table A1. Refiner/Reseller MotorImports

  19. Price of Everett, MA Liquefied Natural Gas Total Imports (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

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  20. Price of Everett, MA Liquefied Natural Gas Total Imports (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5 Tables July 1996 Energy Information Administration Office ofthroughYear Jan Feb Mar AprYearperThousandDollars perThousand

  1. Price of Everett, MA Natural Gas LNG Imports from Algeria (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5 Tables July 1996 Energy Information Administration Office ofthroughYear Jan Feb Mar AprYearperThousandDollars perThousandThousand

  2. Price of Everett, MA Natural Gas LNG Imports from Australia (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5 Tables July 1996 Energy Information Administration Office ofthroughYear Jan Feb Mar AprYearperThousandDollars

  3. Price of Everett, MA Natural Gas LNG Imports from Egypt (Nominal Dollars

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5 Tables July 1996 Energy Information Administration Office ofthroughYear Jan Feb Mar AprYearperThousandDollarsper Thousand Cubic

  4. Price of Everett, MA Natural Gas LNG Imports from Trinidad and Tobago

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5 Tables July 1996 Energy Information Administration Office ofthroughYear Jan Feb Mar AprYearperThousandDollarsper Thousand

  5. Price of Everett, MA Natural Gas LNG Imports from Trinidad and Tobago

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5 Tables July 1996 Energy Information Administration Office ofthroughYear Jan Feb Mar AprYearperThousandDollarsper Thousand(Dollars per

  6. MA 59800

    E-Print Network [OSTI]

    ... (MATH 614); MA 59800 027 - UNIV 117 TR 01:30pm - Dadarlat, Marius (MATH 708); MA 59800 029 - REC 317 TR 10:30am - McReynolds, David (MATH 704) ...

  7. MA 59800

    E-Print Network [OSTI]

    ... McReynolds, David (MATH 704); MA 59800 518 - REC 123 F 11:30am - McReynolds, David (MATH 704); MA 59800 519 - REC 123 F 06:30pm - McReynolds, ...

  8. MA 37500

    E-Print Network [OSTI]

    MA 37500 042 - UNIV 003 TR 10:30am - McReynolds, David (MATH 704); MA 37500 043 - UNIV 003 TR 12:00pm - McReynolds, David (MATH 704) ...

  9. MA 16100

    E-Print Network [OSTI]

    MA 16100, Spring 2015. Plane Analytic Geometry And Calculus I. Course Info. Syllabus · Assignment Sheet · Emergency Prepardness · Daily Course Calendar

  10. Metal-insulator-semiconductor structure on low-temperature grown GaAs M. Young, W. Li, and T. P. Ma

    E-Print Network [OSTI]

    Woodall, Jerry M.

    technique has been used to deposit high-quality insula- tors on Si,16 GaN,17 and GaP.18 It utilizes a high-speed jet of light carrier gases to transport depositing species onto the substrate to form insulator films-type substrate was chosen for potential n-channel de- vices. A 400 nm thick regular p-type GaAs epilayer doped

  11. MA 35300

    E-Print Network [OSTI]

    Emphasis on problem solving and applications from science, engineering, economics, or business. Not open to students with credit in MA 51100. Typically ...

  12. MA 353

    E-Print Network [OSTI]

    Emphasis on problem solving and applications from science, engineering, economics, or business. Not open to students with credit in MA 51100. Typically ...

  13. MA 450

    E-Print Network [OSTI]

    Course Description. Credit Hours: 3.00. This course, which is essentially the first half of MA 55300, is recommended for students wanting a more substantial ...

  14. MA 266

    E-Print Network [OSTI]

    Page 1. MA 266. Final Exam December 16, 2003. All INSTRUCTORS. 7:00 p.m. — 9:00 p.m.. LAMBERT FLDHS. Page 2.

  15. MA 151

    E-Print Network [OSTI]

    Page 1. MA 151. Final Exam December 17, 2003. ALL INSTRUCTORS. 1:00 pm. — 3:00 pm. LAMBERT FLDHS. Page 2.

  16. MA 224

    E-Print Network [OSTI]

    Page 1. MA 224. Final Exam December 19, 2003 3:20 pm. — 5:20 pm. ALL INSTRUCTORS LAMBERT FLDHS. Page 2.

  17. MA 265

    E-Print Network [OSTI]

    Page 1. MA 265. Final Exam December 17, 2003 10:20 am. - 12:20 pm. All INSTRUCTORS LAMBERT FLDHS. Page 2.

  18. MA 15400

    E-Print Network [OSTI]

    These video lessons are presented by Tim Delworth, the coordinator of MA 15400. Quick Reference Guide to Campus Emergencies; Tutoring; POET (Pursuit of ...

  19. MA 56200

    E-Print Network [OSTI]

    Instructor Info. MA 56200 001 - ME 2053 TR 10:30am - Mcreynolds, David (MATH 704). Important Notes: ADA policies: please see our ADA Information page for ...

  20. MA 36200

    E-Print Network [OSTI]

    MA 36200, Spring 2015. Topics In Vector Calculus ... ADA policies: please see our ADA Information page for more details. In the event of a missed exam, see ...

  1. MA AP MA MA MA AP AP MA MA MA AP AP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9November 6, In this issue: -J EmissionsF 3 SO.MA

  2. A NEW ROBOT DESIGN TO PASSIVELY DAMP FLEXIBLE ROBOTIC ARMS Louis J. Everett

    E-Print Network [OSTI]

    Everett, Louis J.

    applications as well as the Department of Energy's Environmental Waste Management projects. Most of the robotsA NEW ROBOT DESIGN TO PASSIVELY DAMP FLEXIBLE ROBOTIC ARMS Louis J. Everett Mechanical and Industrial Engineering University of Texas El Paso USA Marc Compere Mechanical Engineering Department

  3. High-speed digital modulation of ultralow threshold (<1 mA) GaAs single quantum well lasers without bias

    SciTech Connect (OSTI)

    Lau, K.Y.; Bar-Chaim, N.; Derry, P.L.; Yariv, A.

    1987-07-13T23:59:59.000Z

    GaAlAs buried heterostructure lasers with submilliampere threshold current fabricated from single quantum well wafers can be driven directly with logic level signals without any current bias. The switch-on delay was measured to be <50 ps and no relaxation oscillation ringing was observed. These lasers permit fully o-smcapsn-smcapsreverse arrow-smcapso-smcapsf-smcapsf-smcaps multigigabit digital switching while at the same time obviating the need for bias monitoring and feedback control.

  4. MA 261

    E-Print Network [OSTI]

    MA 261. Final Exam December 19, 2003. All INSTRUCTORS. 1:00 p. m. — 3:00 pm. LAMBERT FLDHS. Page 2. 3&4. .>ua 50.3.0 - m?ziu?w 2508: a 29:38.03 88.

  5. Office of Fossil Energy

    Office of Environmental Management (EM)

    GA 2.9 3.0 5.9 Everett, MA 7.7 7.6 15.4 Freeport, TX - - - Golden Pass, TX - - - Gulf LNG, MS - - - Lake Charles, LA - - - Neptune Deepwater Port - - - Northeast Gateway Energy...

  6. MA 37500, Summer 2015

    E-Print Network [OSTI]

    MA 37500, Summer 2015. Introduction To Discrete Mathematics ... Course Materials. Textbook: Discrete Mathematics and Its Applications (7), Kenneth Rosen ...

  7. MA 22400 -- CALCULATOR POLICY

    E-Print Network [OSTI]

    OwenDavis

    2014-08-22T23:59:59.000Z

    MA 22400 -- CALCULATOR POLICY. A ONE-LINE scientific calculator is REQUIRED. No other calculator is allowed. RECOMMENDED: TI-30Xa calculator

  8. MA 154 FORMULA SHEET

    E-Print Network [OSTI]

    delworth

    2006-01-07T23:59:59.000Z

    8/02. MA 154 FORMULA SHEET. ADDITION AND SUBTRACTION FORMULAS sin(u + v) = sinucosv + cosusinv sin(u? v) = sinucosv ? cosusinv cos(u + v) ...

  9. MA 15400 FORMULA SHEET

    E-Print Network [OSTI]

    User

    2011-11-07T23:59:59.000Z

    11/11. MA 15400 FORMULA SHEET. ADDITION AND SUBTRACTION FORMULAS sin(u + v) = sinucosv + cosusinv sin(u? v) = sinucosv ? cosusinv cos(

  10. Materials for MA 182.

    E-Print Network [OSTI]

    Materials for MA 182. INSTRUCTOR: Richard Penney. Office: MATH 822: Telephone: 494-1968: e-mail: rcp@math.purdue.edu: Office Hours: Mon, Tu, Fri,

  11. MA 161 Page

    E-Print Network [OSTI]

    FINAL EXAM - December 12, Monday, 10:20am-12:20pm (Lambert Fieldhouse). Exam Locations and Seating Chart · MA 161 Final Exam Practice Problems ...

  12. MA 162 Page

    E-Print Network [OSTI]

    MA 162 FINAL EXAM - Wednesday, December 12 (3:30pm - 5:30pm). Seating Chart (LAMBERT FIELDHOUSE) · Exam #1 - STUDY GUIDE · Exam #2 - STUDY

  13. MA Course Catalogue

    E-Print Network [OSTI]

    514 - Numerical Analysis (CS 514) Iterative methods for solving nonlinear; ... Mathematics The course covers mathematics useful in analyzing computer algorithms. ... 527 - Advanced Mathematics For Engineers And Physicists I Courses MA ...

  14. InGaAsP/InGaP buried heterostructure lasers at 810 nm

    SciTech Connect (OSTI)

    Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.

    1984-12-01T23:59:59.000Z

    InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.

  15. Taught degrees MA in Creative Media Practice

    E-Print Network [OSTI]

    Sussex, University of

    informed creative practice across digital media, photography and a range of aural and visual forms.maddox@sussex.ac.uk www.sussex.ac.uk/mfm Essentials Taught degrees MA in Creative Media Practice MA in Digital Documentary MA in Digital Media MA in Gender and Media MA in Media and Cultural Studies MA in Media Practice

  16. Role of Embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN X. Y. Cui,1

    E-Print Network [OSTI]

    Medvedeva, Julia E.

    Role of Embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN X. Y. Cui,1 J. E provide direct evidence that Cr atoms in Cr:GaN have a strong tendency to form embedded clusters, to date, the ma- jority of first-principles investigations into DMS--and Cr:GaN, Mn:GaN, and Mn

  17. The ma Ni Song 2

    E-Print Network [OSTI]

    Zla ba sgrol ma

    2009-11-10T23:59:59.000Z

    ba sgrol ma Date of recording November 10th 2009. Place of recording Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Name(s), age, sex, place of birth of performer(s) Bo... nyed. Female. Born 1954. and Song rgyas dbar sgron. Female. Born 1992 Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Language of recording Khams Tibetan Performer(s)’s first...

  18. The ma Ni Song 1

    E-Print Network [OSTI]

    Zla ba sgrol ma

    2009-11-10T23:59:59.000Z

    ba sgrol ma Date of recording November 10th 2009. Place of recording Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Name(s), age, sex, place of birth of performer(s) Bo... nyed. Female. Born 1954. Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Language of recording Khams Tibetan Performer(s)’s first / native language Khams Tibetan Performer...

  19. The ma Ni Song 5

    E-Print Network [OSTI]

    Zla ba sgrol ma

    2009-11-10T23:59:59.000Z

    ba sgrol ma Date of recording November 10th 2009. Place of recording Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Name(s), age, sex, place of birth of performer(s) Chos... tdog. Female. Born 1984. Song rgyas dpar sgron. Female. Born 1992. Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Language of recording Khams Tibetan Performer(s)’s first...

  20. The ma Ni Song 3

    E-Print Network [OSTI]

    Zla ba sgrol ma

    2009-11-10T23:59:59.000Z

    ba sgrol ma Date of recording November 10th 2009. Place of recording Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Name(s), age, sex, place of birth of performer(s) Bo... nyed. Female. Born 1954 and Song rgyas dbar sgron. Female. Born 1992. Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Language of recording Khams Tibetan Performer(s)’s first...

  1. WIND DATA REPORT FALMOUTH, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT FALMOUTH, MA June1, 2004 to August 31, 2004. Prepared for Massachusetts Technology...................................................................................................................... 8 Wind Speed Time Series............................................................................................................. 8 Wind Speed Distributions

  2. WIND DATA REPORT DARTMOUTH, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT DARTMOUTH, MA March 26th 2005 to May 31st 2005. Prepared for Massachusetts...................................................................................................................... 9 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distributions

  3. WIND DATA REPORT FALMOUTH, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT FALMOUTH, MA June 1st 2004- May 31st 2005 Prepared for Massachusetts Technology.................................................................................................................... 10 Wind Speed Distributions......................................................................................................... 11 Monthly Average Wind Speeds

  4. WIND DATA REPORT Kingston, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Kingston, MA March 1, 2006 - May 31, 2006 Prepared for Massachusetts Technology.................................................................................................................... 10 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distributions.......

  5. WIND DATA REPORT Nantucket, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Nantucket, MA September 1st 2005 to November 30th 2005. Prepared for Massachusetts.................................................................................................................... 10 Wind Speed Time Series........................................................................................................... 10 Wind Speed Distributions

  6. WIND DATA REPORT Wellfleet, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Wellfleet, MA December 1st , 2006 ­ February 28th , 2007 Prepared...................................................................................................................... 8 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distributions

  7. WIND DATA REPORT Nantucket, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Nantucket, MA June 1st 2006 to August 31th 2006 Prepared for Massachusetts.................................................................................................................... 11 Wind Speed Time Series........................................................................................................... 11 Wind Speed D

  8. WIND DATA REPORT Chester, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Chester, MA December 2006 ­ February 2007 Prepared for Massachusetts Technology...................................................................................................................... 9 Wind Speed Time Series........................................................................................................... 10 Wind Speed Distributions

  9. WIND DATA REPORT Chester, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Chester, MA March 2007 ­ May 2007 Prepared for Massachusetts Technology...................................................................................................................... 8 Wind Speed Time Series........................................................................................................... 10 Wind Speed Distributions

  10. WIND DATA REPORT Chester, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Chester, MA September ­ November 2006 Prepared for Massachusetts Technology.................................................................................................................... 10 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distributions

  11. WIND DATA REPORT DARTMOUTH, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT DARTMOUTH, MA September 1st 2005 to November 30th 2005. Prepared for Massachusetts.................................................................................................................... 10 Wind Speed Time Series........................................................................................................... 10 Wind Speed Distributions

  12. WIND DATA REPORT Kingston, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Kingston, MA December 1, 2005 - February 28, 2006 Prepared for Massachusetts.................................................................................................................... 10 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distribution

  13. WIND DATA REPORT Nantucket, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Nantucket, MA December 1st 2005 to February 28th 2006 Prepared for Massachusetts.................................................................................................................... 11 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distributions

  14. WIND DATA REPORT FALMOUTH, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT FALMOUTH, MA Sep 1st 2004 to Nov 30th 2004. Prepared for Massachusetts Technology...................................................................................................................... 9 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distributions

  15. WIND DATA REPORT Chester, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Chester, MA June ­ August 2006 Prepared for Massachusetts Technology Collaborative.................................................................................................................... 10 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distributions

  16. WIND DATA REPORT Nantucket, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Nantucket, MA June 1st 2005 to August 31st 2005. Prepared for Massachusetts.................................................................................................................... 10 Wind Speed Time Series........................................................................................................... 10 Wind Speed Distributions

  17. WIND DATA REPORT DARTMOUTH, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT DARTMOUTH, MA June 1st 2005 to August 31st 2005. Prepared for Massachusetts.................................................................................................................... 10 Wind Speed Time Series........................................................................................................... 10 Wind Speed Distributions

  18. WIND DATA REPORT DARTMOUTH, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT DARTMOUTH, MA December 1st 2005 to February 28th 2006. Prepared for Massachusetts.................................................................................................................... 11 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distributions

  19. WIND DATA REPORT Dartmouth, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Dartmouth, MA March 1st 2006 to May 31th 2006 Prepared for Massachusetts.................................................................................................................... 11 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distributions

  20. WIND DATA REPORT Wellfleet, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Wellfleet, MA March 1st , 2007 ­ May 31st , 2007 Prepared for Massachusetts...................................................................................................................... 8 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distributions

  1. WIND DATA REPORT Chester, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Chester, MA April 14 ­ May 31, 2006 Prepared for Massachusetts Technology.................................................................................................................... 10 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distributions

  2. WIND DATA REPORT FALMOUTH, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT FALMOUTH, MA Dec 1st 2004 to Feb 28th 2005. Prepared for Massachusetts Technology ...................................................................................................................... 9 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distributions

  3. WIND DATA REPORT FALMOUTH, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT FALMOUTH, MA March 1st 2005 to May 31st 2005. Prepared for Massachusetts...................................................................................................................... 9 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distributions

  4. WIND DATA REPORT Dartmouth, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Dartmouth, MA June 1st 2006 to July 31th 2006 Prepared for Massachusetts.................................................................................................................... 11 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distributions

  5. MA 153 Schedule, Fall 2001

    E-Print Network [OSTI]

    math

    2012-08-16T23:59:59.000Z

    For supplemental videos and PowerPoint presentations to go along with these lessons, visit the course website at www.math.purdue.edu/ma153.

  6. WIND DATA REPORT Nantucket, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Nantucket, MA March 1st 2006 to May 31th 2006 Prepared for Massachusetts.................................................................................................................... 11 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distribut

  7. Discovery and utilization of sorghum genes (Ma5/Ma6)

    DOE Patents [OSTI]

    Mullet, John E; Rooney, William L; Klein, Patricia E; Morishige, Daryl; Murphy, Rebecca; Brady, Jeff A

    2012-11-13T23:59:59.000Z

    Methods and composition for the production of non-flowering or late flowering sorghum hybrid. For example, in certain aspects methods for use of molecular markers that constitute the Ma5/Ma6 pathway to modulate photoperiod sensitivity are described. The invention allows the production of plants having improved productivity and biomass generation.

  8. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03T23:59:59.000Z

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  9. Taught degree MA in Film Studies

    E-Print Network [OSTI]

    Sussex, University of

    in The Times Good University Guide 2013, in the top 15 in the UK in The Complete University Guide 2014 and Media (p123) MA in International Journalism (p113) MA in Journalism and Documentary Practice (p113) MA in Journalism and Media Studies (p113) MA in Media and Cultural Studies (p123) MA in Media Practice

  10. MA15900 Expectations/Suggestions

    E-Print Network [OSTI]

    odavis

    2011-08-21T23:59:59.000Z

    WEB PAGE: …math.purdue.edu/MA15900 or go to www.math.purdue.edu and then click on ... wide and an inch deep. Be careful about assuming you already.

  11. MA15900 Expectations/Suggestions

    E-Print Network [OSTI]

    Owen Davis

    2008-08-29T23:59:59.000Z

    WEB PAGE: …math.purdue.edu/MA 15900 or go to www.math.purdue.edu and ... are available on the respective course web pages.) ... wide and an inch deep.

  12. Final Exam for MA 265

    E-Print Network [OSTI]

    The Final Exam For MA 265: Fall 2002. Date: Thursday, December 12, 2002. Time: 3:20 - 5:20 pm. Room: Lambert Fieldhouse, or check the Online Catalog of

  13. MA 16100 Ground Rules & Grading Policy

    E-Print Network [OSTI]

    2015-01-04T23:59:59.000Z

    Course Syllabus - MA 16100, Spring 2015. Course Web Page: Check this page www.math.purdue.edu/MA161 (Click here). There is also a detailed Daily ...

  14. MA 15400 ONLINE Fall 2014 Syllabus

    E-Print Network [OSTI]

    Delworth, Timothy J

    2014-09-14T23:59:59.000Z

    MA 15400 ONLINE Fall 2014 Syllabus. TEXTBOOK. COURSE WEBSITE. RECORDED LESSONS. HOMEWORK. QUIZZES. EXAMS. CALCULATORS. OFFICE ...

  15. MA 15400 ONLINE Spring 2015 Syllabus

    E-Print Network [OSTI]

    Delworth, Timothy J

    2015-01-06T23:59:59.000Z

    MA 15400 ONLINE Spring 2015 Syllabus. TEXTBOOK. COURSE WEBSITE. RECORDED LESSONS. HOMEWORK. QUIZZES. EXAMS. CALCULATORS.

  16. Taught degrees MA in International Journalism

    E-Print Network [OSTI]

    Sussex, University of

    and Film at Sussex is ranked in the top 10 places to study in the UK in The Times Good University GuideEssentials Taught degrees MA in International Journalism MA in Journalism and Documentary Practice Journalism, MA in Journalism and Documentary Practice, MA in Journalism and Media Studies IELTS 6

  17. Boston, Massachusetts Location: Boston, MA

    E-Print Network [OSTI]

    Prevedouros, Panos D.

    -recovery ventilation and water-source heat pumps Each unit has fresh air ducted independently. Each residence is warmed by a heat pump that taps the Trigen Energy Corporation steam lines that run underneath the street. #12;WallsBoston, Massachusetts #12;Location: Boston, MA Building type(s): Multi-unit residential, Retail 350

  18. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN

  19. MA.+'

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling7111AWell:F E ,"^ I This pageTJ3: 7-ZMA.+' t

  20. Data Update for Paxton, MA December, 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA December, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for December, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  1. Data Update for Paxton, MA November, 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA November, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for November, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  2. Data Update for Paxton, MA February, 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA February, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for February, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  3. Data Update for Paxton, MA January, 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA January, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for January, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  4. Data Update for Paxton, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA May, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for May, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

  5. Data Update for Paxton, MA September, 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA September, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for September, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  6. Data Update for Paxton, MA October, 2004

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA October, 2004 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for October, 2004 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  7. Data Update for Paxton, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA June, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for June, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

  8. Data Update for Paxton, MA April, 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA April, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for April, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

  9. Data Update for Paxton, MA October, 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA October, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for October, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  10. Data Update for Paxton, MA August, 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA August, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for August, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  11. Data Update for Paxton, MA September, 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA September, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for September, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  12. Data Update for Paxton, MA April, 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA April, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for April, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

  13. Data Update for Paxton, MA October, 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA October, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for October, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  14. Data Update for Paxton, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA May, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for May, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

  15. Data Update for Paxton, MA November, 2004

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA November, 2004 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for November, 2004 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  16. Data Update for Paxton, MA February, 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA February, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for February, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  17. Data Update for Blandford, MA October 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Blandford, MA October 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Matthew Lackner Monthly Data Summary for October 2006 This update summarizes the monthly data results for the Blandford monitoring site in Blandford, MA, at 42.223° N, 72

  18. Data Update for Paxton, MA March, 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA March, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for March, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

  19. Data Update for Paxton, MA August, 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA August, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for August, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  20. Data Update for Paxton, MA December, 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA December, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for December, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  1. Data Update for Paxton, MA March, 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA March, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for March, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

  2. Data Update for Blandford, MA November 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Blandford, MA November 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Matthew Lackner Monthly Data Summary for November 2006 This update summarizes the monthly data results for the Blandford monitoring site in Blandford, MA, at 42.223° N, 72

  3. Data Update for Paxton, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA July, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for July, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

  4. Data Update for Paxton, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA June, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for June, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

  5. Data Update for Paxton, MA September, 2004

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA September, 2004 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for September, 2004 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  6. Data Update for Paxton, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA July, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for July, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

  7. Data Update for Paxton, MA January, 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA January, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for January, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  8. Data Update for Paxton, MA November, 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA November, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for November, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  9. Data Update for Paxton, MA December, 2004

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Paxton, MA December, 2004 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for December, 2004 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

  10. Ookie Ma | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO2:Introduction toManagementOPAM PolicyOfEnergy Online Classified orOnlineOokie Ma About

  11. US NE MA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1Stocks Nov-14TotalThe Outlook269,023Year69,023US Virgin120Mnt(N)NE MA

  12. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06T23:59:59.000Z

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  13. MA transmutation performance in the optimized MYRRHA

    SciTech Connect (OSTI)

    Malambu, E.; Van den Eynde, G.; Fernandez, R.; Baeten, P.; Ait Abderrahim, H. [SCK-CEN, Boeretang 200, BE-2400 Mol (Belgium)

    2013-07-01T23:59:59.000Z

    MYRRHA (multi-purpose hybrid research reactor for high-tech applications) is a multipurpose research facility currently being developed at SCK-CEN. It will be able to work in both critical and subcritical modes and, cooled by lead-bismuth eutectic. In this paper the minor actinides (MA) transmutation capabilities of MYRRHA are investigated. (Pu + Am, U) MOX fuel and (Np + Am + Cm, Pu) Inert Matrix Fuel test samples have been loaded in the central channel of the MYRRHA critical core and have been irradiated during five cycles, each one consisting of 90 days of operation at 100 MWth and 30 days of shutdown. The reactivity worth of the test fuel assembly was about 1.1 dollar. A wide range of burn-up level has been achieved, extending from 42 to 110 MWd/kg HM, the samples with lower MA-to-Pu ratios reaching the highest burn-up. This study has highlighted the importance of the initial MA content, expressed in terms of MA/Pu ratio, on the transmutation rate of MA elements. For (Pu + Am, U) MOX fuel samples, a net build-up of MA is observed when the initial content of MA is very low (here, 1.77 wt% MA/Pu) while a net decrease in MA is observed in the sample with an initial content of 5 wt%. This suggests the existence of some 'equilibrium' initial MA content value beyond which a net transmutation is achievable.

  14. Taught degree MA in Film Studies: Global Film Cultures

    E-Print Network [OSTI]

    Sussex, University of

    10 places to study in the UK in The Complete University Guide 2012-13 and The Times Good UniversityD in Film Studies Related degrees MA in Creative Media Practice (p119) MA in Digital Documentary (p120) MA in Digital Media (p121) MA in Gender and Media (p121) MA in Journalism and Documentary Practice (p111) MA

  15. WIND DATA REPORT Quincy DPW, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Quincy DPW, MA September 1st 2006 to November 30th 2006 Prepared for Massachusetts.................................................................................................................... 11 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distributions

  16. WIND DATA REPORT WBZ Tower, Hull, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT WBZ Tower, Hull, MA 9/1/06-11/30/06 Prepared for Department of Energy (DOE) Golden.................................................................................................................... 10 Wind Speed Time Series...........................................................................................................

  17. WIND DATA REPORT Quincy DPW, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Quincy DPW, MA June 1st 2006 to August 31st 2006 Prepared for Massachusetts.................................................................................................................... 11 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distributions

  18. WIND DATA REPORT Quincy DPW, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Quincy DPW, MA March 1st 2007 to May 31st 2007 Prepared for Massachusetts...................................................................................................................... 8 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distributions

  19. WIND DATA REPORT WBZ Tower, Hull, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT WBZ Tower, Hull, MA 11/13/06-11/30/06 Prepared for Department of Energy (DOE.................................................................................................................... 10 Wind Speed Time Series.........................................................................................................

  20. MA 159 Final Exam Memo/Preparation

    E-Print Network [OSTI]

    Owen Davis

    2007-11-17T23:59:59.000Z

    MA 159 Final Exam Memo/Preparation. Monday, December 10 – 10:20 AM (2 hour exam). In Lambert Fieldhouse. **Note the early time and have double and ...

  1. MA 26200 Class Information (Fall 2013)

    E-Print Network [OSTI]

    FINAL EXAM - Tuesday, December 10th (1:00pm - 3:00pm) LAMBERT Fieldhouse. Seating Chart (Lambert Fieldhouse) · MA 262 Final Exam resources

  2. MA 26600 Class Information (Fall 2012)

    E-Print Network [OSTI]

    ... for Important Announcements and Alerts ***. MA 266 FINAL EXAM - Tuesday, December 11 (10:30am - 12:30pm). Seating Chart (LAMBERT FIELDHOUSE) ...

  3. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N- GaN built-in junctions in the n-GaN layer for InGaN/GaN: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN

  4. Taught degrees MA in Journalism and Documentary Practice

    E-Print Network [OSTI]

    Sussex, University of

    in the top 10 places to study in the UK in The Complete University Guide 2012-13 and The Times GoodEssentials Taught degrees MA in Journalism and Documentary Practice MA in Journalism and Media Studies MA in Multimedia Journalism Related degrees MA in Creative Media Practice (p119) MA in Digital

  5. A vertical monolithic combination of an InGaAsP/InP laser and a heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chen, T.R.; Utaka, K.; Zhuang, Y.; Liu, Y.Y.; Yariv, A.

    1987-06-01T23:59:59.000Z

    A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.

  6. WIND DATA REPORT WBZ Tower, Hull, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT WBZ Tower, Hull, MA 12/1/06-2/28/07 Prepared for Department of Energy (DOE) Golden...................................................................................................................... 8 Wind Speed Time Series............................................................................................................. 9 Wind Speed Distributions

  7. MA 266 Review Topics - Exam # 2

    E-Print Network [OSTI]

    2012-03-05T23:59:59.000Z

    Page 1. Spring 2012. MA 266. Review Topics - Exam # 2 ..... and using a table of Laplace transforms (see table on page 317) and using linearity : L{f(t) + g(t)} ...

  8. MA 266 Review Topics - Exam # 1

    E-Print Network [OSTI]

    2012-01-25T23:59:59.000Z

    Page 1. Spring 2012. MA 266. Review Topics - Exam # 1. (1) Special Types of First Order Equations. I. First Order Linear Equation (FOL): dy dt. + p(t)y = g(t).

  9. MA 266 Review Topics - Exam # 2 (updated)

    E-Print Network [OSTI]

    2012-04-23T23:59:59.000Z

    Page 1. Spring 2012. MA 266. Review Topics - Exam # 2 (updated) ..... and using a table of Laplace transforms (see table on page 317) and using linearity : L{f(t) ...

  10. SAMPLE Plan of Study for Mathematics Education (MAED)

    E-Print Network [OSTI]

    Cara

    2013-03-20T23:59:59.000Z

    Hours. Semester 1. Course. MA 16100, 16500. ENGL 10600/10800 Language 101002. MA 10800 Free. Title. Calculus I. Freshman Comp. Intro Math. Hours. 4-

  11. 0. 98 [mu]m InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber

    SciTech Connect (OSTI)

    Ohkubo, Michio; Namiki, Shu; Ijichi, Tetsuro; Iketani, Akira; Kikuta, Toshio (Furukawa Electric Co., Ltd., Yokohama (Japan))

    1993-06-01T23:59:59.000Z

    A CW coupled optical power of 75 mW into a single-mode fiber (SMF) at a driving current of 200 mA was achieved by InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW ridge waveguide lasers emitting at 0.98 [mu]m. The GRIN-SCH profile was optimized to minimize the series resistance due to spikes at GaAs-InGaP heterointerfaces. The other approach was proposed for high coupling efficiency into the SMF with cutoff wavelength of 0.88 [mu]m: The ridge mesa width was precisely controlled around 2 [mu]m, and an aspect ratio of far-field pattern ([theta][sub [perpendicular

  12. Cd diffused mesa-substrate buried heterostructure InGaAsP/InP laser

    SciTech Connect (OSTI)

    Yi, M.B.; Lu, L.T.; Kapon, E.; Rav-Noy, Z.; Margalit, S.; Yariv, A.

    1985-02-15T23:59:59.000Z

    A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2-..mu..m-wide active region.

  13. Embedded epitaxial growth of low-threshold GaInAsP/InP injection lasers

    SciTech Connect (OSTI)

    Chen, P.C.; Yu, K.L.; Margalit, S.; Yariv, A.

    1981-03-01T23:59:59.000Z

    Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new heterostructure laser is grown using this technique. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 45 mA are achieved for a laser with 4-..mu..m-wide active region.

  14. RIVIER COLLEGE MA/CS Department

    E-Print Network [OSTI]

    Riabov, Vladimir V.

    , Code (in Appendix), test results, table of contents, and other project related materials. Good luckRIVIER COLLEGE MA/CS Department CS552: Software Design Strategy TEAM PROJECT REQUIREMENTS to the team project: The project should include: = Title of the project; = One-page Executive Summary

  15. Fabrication technology for ODS Alloy MA957

    SciTech Connect (OSTI)

    ML Hamilton; DS Gelles; RJ Lobsinger; MM Paxton; WF Brown

    2000-03-16T23:59:59.000Z

    A successful fabrication schedule has been developed at Carpenter Technology Corporation for the production of MA957 fuel and blanket cladding. Difficulties with gun drilling, plug drawing and recrystallization were overcome to produce a pilot lot of tubing. This report documents the fabrication efforts of two qualified vendors and the support studies performed at WHC to develop the fabrication-schedule.

  16. MA Ph.D. Qualifying Exam Directions

    E-Print Network [OSTI]

    Liblit, Ben

    MA Ph.D. Qualifying Exam Fall 2010 Directions: Use careful reasoning to develop the answers to each numerical answers. You may use the LZGS text for reference for this exam. 1. Explain in detail why the mean with the system. Each query type i also generates a small amount of further processing time, with average Si

  17. Grid Security: Expecting the Mingchao Ma

    E-Print Network [OSTI]

    University College London

    of a communications line; Power failure; Internet connection failure; Mis-configuration; · Security incidents ­ SystemGrid Security: Expecting the Unexpected Mingchao Ma STFC ­ Rutherford Appleton Laboratory, UK #12;Slide 2 Overview · Security Service Challenges (SSC) Review · Grid Security Incident ­ What had happened

  18. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer

  19. Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures

    E-Print Network [OSTI]

    Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP September 2007 Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing

  20. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  1. Stability in MaVaN Models

    E-Print Network [OSTI]

    Christopher Spitzer

    2006-06-26T23:59:59.000Z

    Mass-varying neutrino (MaVaN) models propose a source of dark energy in a new scalar field called the acceleron. Recent work has shown that nonrelativistic neutrino fields in these theories are unstable to inhomogeneous fluctuations, and form structures that no longer behave as dark energy. One might expect that in multiple-neutrino models, the lighter species could continue to act as a source for the acceleron, generating dark energy without the help of heavier species. This paper shows that by considering the evolution of the acceleron field for a large class of models, the result of any neutrino component becoming unstable is that all components become unstable within a short time on cosmological scales. An alternate model employing a second scalar field in a hybrid potential is shown to have stable MaVaN dark energy even in the presence of unstable heavier components.

  2. UNIVERSITY OF DUBLIN MA1212-1 TRINITY COLLEGE

    E-Print Network [OSTI]

    Karageorgis, Paschalis

    UNIVERSITY OF DUBLIN MA1212-1 TRINITY COLLEGE Faculty of Engineering, Mathematics and Science school of mathematics JF Maths/TP SF TSM Trinity Term 2013 MA1212 -- Linear Algebra II Wednesday, May 1

  3. UNIVERSITY OF DUBLIN MA1111-1 TRINITY COLLEGE

    E-Print Network [OSTI]

    Karageorgis, Paschalis

    UNIVERSITY OF DUBLIN MA1111-1 TRINITY COLLEGE Faculty of Engineering, Mathematics and Science school of mathematics JF Maths/TP/TSM Trinity Term 2013 MA1111 -- Linear Algebra I Monday, April 29 RDS

  4. Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

    SciTech Connect (OSTI)

    Chen, T.R.; Utaka, K.; Zhuang, Y.H.; Liu, Y.Y.; Yariv, A.

    1987-04-06T23:59:59.000Z

    A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.

  5. Data Update for Mt. Tom, Holyoke, MA August 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA August 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for August 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  6. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA June 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for June 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

  7. Data Update for Mt. Tom, Holyoke, MA January 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA January 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for December 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  8. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA May 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for May 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  9. Data Update for Mt. Tom, Holyoke, MA October 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA October 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for October 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  10. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA July 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for July 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  11. Data Update for Mt. Tom, Holyoke, MA December 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA December 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for December 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  12. Data Update for Mt. Tom, Holyoke, MA October 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA October 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for October 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  13. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA July 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for July 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  14. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA July 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for July 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

  15. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA March 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for March 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  16. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA May 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for May 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

  17. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA April 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for April 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  18. Data Update for Mt. Tom, Holyoke, MA October 2007

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA October 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for October 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  19. Data Update for Mt. Tom, Holyoke, MA November 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA November 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for November 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  20. Data Update for Mt. Tom, Holyoke, MA January 2008

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA January 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for January 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  1. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA June 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for June 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  2. Data Update for Mt. Tom, Holyoke, MA January 2007

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA January 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for January 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  3. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA April 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for April 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  4. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA March 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for March 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  5. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA June 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for June 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  6. Data Update for Mt. Tom, Holyoke, MA November 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA November 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for November 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  7. Data Update for Mt. Tom, Holyoke, MA February 2007

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA February 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for February 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  8. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA April 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for April 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

  9. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA March 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for March 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

  10. Data Update for Mt. Tom, Holyoke, MA August 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA August 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for August 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  11. Data Update for Mt. Tom, Holyoke, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA May 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for May 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  12. Data Update for Mt. Tom, Holyoke, MA August 2007

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Mt. Tom, Holyoke, MA August 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for August 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

  13. Economics & Finance MA or BSc (Single Honours Degrees)

    E-Print Network [OSTI]

    Brierley, Andrew

    88 Economics & Finance MA or BSc (Single Honours Degrees) Applied Economics Economics Financial Economics BA (International Honours Degrees) Economics See page 13 MA or BSc (Joint Honours Degrees) Economics and one of: Management Mathematics MA (Joint Honours Degrees) Economics and one of: Ancient

  14. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  15. GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

    SciTech Connect (OSTI)

    Keshagupta, P.; Radpour, F. [Univ. of Cincinnati, OH (United States)

    1994-12-31T23:59:59.000Z

    In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

  16. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    SciTech Connect (OSTI)

    Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

    2011-12-23T23:59:59.000Z

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

  17. Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Eng, L.E.; Chen, T.R.; Sanders, S.; Zhuang, Y.H.; Zhao, B.; Yariv, A. (Department of Applied Physics, California Institute of Technology, Pasadena, California 91125 (US)); Morkoc, H. (The Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801)

    1989-10-02T23:59:59.000Z

    We report on low threshold current strained InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy. Broad-area threshold current densities of 114 A/cm{sup 2} at 990 nm were measured for 1540-{mu}m-long lasers. Threshold currents of 2.4 mA at 950 nm were obtained for an uncoated buried-heterostructure device with a 2-{mu}m-wide stripe and 425-{mu}m-long cavity. With reflective coatings the best device showed 0.9 mA threshold current ({ital L}=225 {mu}m). Preliminary modulation measurements show bandwidths up to 5.5 GHz limited by the detector response.

  18. Very low threshold InGaAsP mesa laser

    SciTech Connect (OSTI)

    Chen, T.R.; Chiu, L.C.; Hasson, A.; Koren, U.; Margalit, S.; Yariv, A.; Yu, K.L.

    1983-05-01T23:59:59.000Z

    Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 ..mu..m) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described.

  19. MA-60 Org chart | Department of Energy

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122Commercial602 1,39732on ArmedManufacturingJunePracticeShipping Goal |ofMA-60 Org

  20. InThrMa | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtel JumpCounty,Jump to: navigation,Information InSAR AtEnevaInThrMa

  1. MA - Office of Management - Energy Conservation Plan

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreaking ofOil & Gas »ofMarketing |Prepare For more(Version 3.0) | DepartmentMA

  2. MA FAshiON dEsigN MA FAshiON KNiTwEAr dEsigN

    E-Print Network [OSTI]

    Evans, Paul

    focus on ethics, climate change and environmental impact, this concept is aimed at reinventionMA FAshiON dEsigN MA FAshiON KNiTwEAr dEsigN MA FAshiON ANd TEXTilEs by rPT MA TEXTilE dEsigN ANd iNNOvATiON FAshiON, KNiTwEAr ANd TEXTilE dEsigN #12;yU XUAN gAN MA FAshion Design Sophisticated Details and 3D

  3. InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

    SciTech Connect (OSTI)

    Tanaka, H.; Kawamura, Y.; Nojima, S.; Wakita, K.; Asahi, H.

    1987-03-01T23:59:59.000Z

    Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. The lasing wavelength is 658 nm with a threshold current density of 7.6 kA/cm/sup 2/. cw operation is also achieved in the MQW laser diodes at -125 /sup 0/C.

  4. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

    E-Print Network [OSTI]

    Compositionally-graded InGaAs­InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem

  5. Mode stabilized terrace InGaAsP lasers on semi-insulating InP

    SciTech Connect (OSTI)

    Chen, T.R.; Yu, K.L.; Koren, U.; Hasson, A.; Margalit, S.; Yariv, A.

    1982-11-01T23:59:59.000Z

    Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The fabrication involves a selective, single-step liquid phase epitaxial growth process, and a lateral Zn diffusion. Two versions of the terrace lasers are fabricated, and threshold currents as low as 35 mA and 50 mA respectively are obtained. The lasers operate with a stable single lateral mode. High power performance is observed. These lasers are suitable for monolithic integration with other optoelectronic devices.

  6. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    Torr and consisted of a 1.4 lm undoped GaN buffer layer on i-SiC substrate, * Corresponding authorLow frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors N. Pala a November 2002 Abstract Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect

  7. Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network

    SciTech Connect (OSTI)

    Alvi, N. H., E-mail: nhalvi@isom.upm.es, E-mail: r.noetzel@isom.upm.es; Soto Rodriguez, P. E. D.; Kumar, Praveen; Gómez, V. J.; Aseev, P.; Nötzel, R., E-mail: nhalvi@isom.upm.es, E-mail: r.noetzel@isom.upm.es [ISOM Institute for Systems Based on Optoelectronics and Microtechnology, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Alvi, A. H. [Department of Physics, Government College University, Faisalabad (Pakistan); Alvi, M. A. [Department of Chemistry, Government College University, Faisalabad (Pakistan); Willander, M. [Department of Science and Technology (ITN), Campus Norrköping, Linköping University, 60174 Norrköping (Sweden)

    2014-06-02T23:59:59.000Z

    We investigate photoelectrochemical water splitting by a spontaneously formed In-rich InGaN nanowall network, combining the material of choice with the advantages of surface texturing for light harvesting by light scattering. The current density for the InGaN-nanowalls-photoelectrode at zero voltage versus the Ag/AgCl reference electrode is 3.4?mA cm{sup ?2} with an incident-photon-to-current-conversion efficiency (IPCE) of 16% under 350?nm laser illumination with 0.075?W·cm{sup ?2} power density. In comparison, the current density for a planar InGaN-layer-photoelectrode is 2?mA cm{sup ?2} with IPCE of 9% at zero voltage versus the Ag/AgCl reference electrode. The H{sub 2} generation rates at zero externally applied voltage versus the Pt counter electrode per illuminated area are 2.8 and 1.61??mol·h{sup ?1}·cm{sup ?2} for the InGaN nanowalls and InGaN layer, respectively, revealing ?57% enhancement for the nanowalls.

  8. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    E-Print Network [OSTI]

    Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

    2010-08-24T23:59:59.000Z

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  9. Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Ishikawa, M.; Ohba, Y.; Sugawara, H.; Yamamoto, M.; Nakanisi, T.

    1986-01-20T23:59:59.000Z

    Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

  10. MA598: Modeling and Computation in Optics and Electromagnetics

    E-Print Network [OSTI]

    2010-08-24T23:59:59.000Z

    MA598: Modeling and Computation in Optics and Electromagnetics. Instructor: Peijun Li, office: Math 440, phone: 49-40846, e-mail: lipeijun@math.purdue.edu.

  11. Advice for succeeding in the MA 15300Y

    E-Print Network [OSTI]

    Devlin, Patrick M

    2015-01-01T23:59:59.000Z

    Advice for succeeding in MA 15300Y. 1. Spend time every day working on the course (watching videos, reviewing PowerPoints, doing homework, completing ...

  12. MA692: Modeling and Computation in Optics and Electromagnetics

    E-Print Network [OSTI]

    2012-08-14T23:59:59.000Z

    MA692: Modeling and Computation in Optics and Electromagnetics. Instructor: Peijun Li, office: Math 440, phone: 49-40846, e-mail: lipeijun@math.purdue.edu.

  13. Course Materials • ALWAYS check the MA 15300 website FIRST ...

    E-Print Network [OSTI]

    Devlin, Patrick M

    2015-01-03T23:59:59.000Z

    policies and understand all the course materials on the website. • ALWAYS check the MA 15300 · website FIRST when searching for class information.

  14. MA 16020 – EXAM FORMULAS THE SECOND DERIVATIVE TEST ...

    E-Print Network [OSTI]

    2014-08-12T23:59:59.000Z

    MA 16020 – EXAM FORMULAS. THE SECOND DERIVATIVE TEST. Suppose f is a function of two variables x and y, and that all the second-order partial ...

  15. Radiation Protection Instrument Manual, Revision 1, PNL-MA-562

    SciTech Connect (OSTI)

    Johnson, Michelle Lynn

    2009-09-23T23:59:59.000Z

    PNL-MA-562 This manual provides specific information for operating and using portable radiological monitoring instruments available for use on the Hanford Site.

  16. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three

  17. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1

    E-Print Network [OSTI]

    Nabben, Reinhard

    Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1 , T. Stempel1/37, 01-142 Warsaw, Poland ABSTRACT Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumines- cence

  18. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

    SciTech Connect (OSTI)

    Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-06-21T23:59:59.000Z

    The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

  19. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01T23:59:59.000Z

    T. Henderson, “High- Speed InGaP/GaAs HBT’s Using a SimpleA typical AlGaAs/GaAs HBT or InGaP/GaAs HBT has the opposite

  20. Phase-locked InGaAsP laser array with diffraction coupling

    SciTech Connect (OSTI)

    Chen, T.R.; Yu, K.L.; Chang, B.; Hasson, A.; Margalit, S.; Yariv, A.

    1983-07-15T23:59:59.000Z

    A phase-locked array of InGaAsP lasers has been fabricated for the first time. This 50-..mu..m-wide array utilized diffraction coupling between adjacent lasers to achieve phase locking. Threshold current as low as 200 mA is obtained for arrays with 250-..mu..m cavity length. Smooth single-lobe far-field patterns with beam divergence as narrow as 3/sup 0/ have been achieved.

  1. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  2. MA and Ph.D. in Applied Anthropology GRADUATE INTERNSHIP

    E-Print Network [OSTI]

    Escher, Christine

    MA and Ph.D. in Applied Anthropology GRADUATE INTERNSHIP Description Students enrolled in the MA or Ph.D. in Applied Anthropology programs must complete a graduate internship with approved professional-supervision. The purpose of this internship is to give students practical training with the guidance of an internship

  3. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA July 2006 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA the next service visit. Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island

  4. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA March 2007 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA speed at Thompson Island for the month of March 2007, at the highest anemometer height of 40 m. #12;

  5. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA May 2008 Prepared for Massachusetts Technology summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA, at 42° 18 below is a graph of wind speed at Thompson Island for the month of May 2008, at the highest anemometer

  6. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA May 2006 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA the next site visit. · Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island

  7. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA March 2006 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA the spring of 2006. · Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island

  8. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA April 2008 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA to this report if and when this happens. Monthly Data Time Series Seen below is a graph of wind speed at Thompson

  9. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA July 2007 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA speed at Thompson Island for the month of July 2007, at the highest anemometer height of 40 m. #12;

  10. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA June 2008 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA to the sensor cables. Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island

  11. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA April 2007 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA speed at Thompson Island for the month of April 2007, at the highest anemometer height of 40 m. #12;

  12. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA June 2006 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA the next service visit. · Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island

  13. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA April 2006 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA the next service visit. · Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island

  14. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA June 2007 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA speed at Thompson Island for the month of June 2007, at the highest anemometer height of 40 m. #12;

  15. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA March 2008 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA is a graph of wind speed at Thompson Island for the month of March 2008, at the highest anemometer height

  16. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA June 2005 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA at Thompson Island for the month of June 2005, at the highest anemometer height of 40 m. Thompson Island Wind

  17. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA July 2008 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA to the sensor cables. Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island

  18. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA May 2007 Prepared for Massachusetts Technology summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA, at 42° 18 speed at Thompson Island for the month of May 2007, at the highest anemometer height of 40 m. #12;

  19. Data Update for Thompson Island, Boston Harbor, MA Prepared for

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA July 2005 Prepared for Massachusetts Technology This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Harbor, MA Series #12;Seen below is a graph of wind speed at Thompson Island for the month of July 2005

  20. Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta

    E-Print Network [OSTI]

    Svane, Axel Torstein

    69,71 Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta Department of Physics properties of wurtzite GaN are studied by Ga nuclear magnetic resonance NMR in a GaN bulk crystal containing GaN is a wide band-gap semiconductor which crystallizes in the hexagonal wurtzite structure

  1. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions Y Abstract Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region

  2. Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao1, USA tpalacios@mit.edu; (617) 324-2395 Keywords: AlGaN/GaN HEMTs, reliability, moisture, electro-chemical reactions Abstract The nature of structural degradation in AlGaN/GaN high electron mobility transistors

  3. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High

    E-Print Network [OSTI]

    Li, Yat

    Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN

  4. Beta decay of Ga-62 

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

  5. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  6. Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tawfik, Wael Z. [Department of Materials Science and Engineering, Chonnam National University, Yongbong 300 Gwangju 500-757 (Korea, Republic of); Department of Physics, Faculty of Science, Beni-Suef University, Beni-Suef 62511 (Egypt); Hyeon, Gil Yong; Lee, June Key, E-mail: junekey@chonnam.ac.kr [Department of Materials Science and Engineering, Chonnam National University, Yongbong 300 Gwangju 500-757 (Korea, Republic of)

    2014-10-28T23:59:59.000Z

    We investigated the influence of the built-in piezoelectric field induced by compressive stress on the characteristics of GaN-based 450-nm light-emitting diodes (LEDs) prepared on sapphire substrates of different thicknesses. As the sapphire substrate thickness was reduced, the compressive stress in the GaN layer was released, resulting in wafer bowing. The wafer bowing-induced mechanical stress altered the piezoelectric field, which in turn reduced the quantum confined Stark effect in the InGaN/GaN active region of the LED. The flat-band voltage was estimated by measuring the applied bias voltage that induced a 180° phase shift in the electro-reflectance (ER) spectrum. The piezoelectric field estimated by the ER spectra changed by ?110?kV/cm. The electroluminescence spectral peak wavelength was blue-shifted, and the internal quantum efficiency was improved by about 22% at a high injection current of 100?mA. The LED on the 60-?m-thick sapphire substrate exhibited the highest light output power of ?59?mW at an injection current of 100?mA, with the operating voltage unchanged.

  7. Matter-Radiation Interactions in Extremes (MaRIE), Los Alamos...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MaRIE: Matter-Radiation Interactions in Extremes Experimental Facility MaRIE Home MaRIE 1.0 Fission, Fusion materials Facility Accelerator Systems Making, Measuring and Modeling...

  8. Opportunities and challenges of M&A in India

    E-Print Network [OSTI]

    Gupta, Nikhil, S.M. Massachusetts Institute of Technology

    2014-01-01T23:59:59.000Z

    The Indian economy has witnessed a major transformation since the government of India introduced the liberalization policies in 1991 .Since then M&A activity in India has picked up pace as foreign companies began to enter ...

  9. Syllabus for MA 16100 IMPACT, Fall 2014 Description: Many ...

    E-Print Network [OSTI]

    2014-08-25T23:59:59.000Z

    Syllabus for MA 16100 IMPACT, Fall 2014. Description: Many students find that large lectures are not the best way for them to learn. IMPACT is a university-wide

  10. M.A. TESOL PROGRAM GRADUATE Michigan State University

    E-Print Network [OSTI]

    M.A. TESOL PROGRAM GRADUATE HANDBOOK Michigan State University Department of Linguistics & Germanic................................................................. 18 VIII. Michigan State University Resources................................................................................................................................... 26 8/15/2014 2 #12;I. Program Overview Administered through the Michigan State University Department

  11. Trinity College Graduation Information (M.A. & Higher)

    E-Print Network [OSTI]

    Lasenby, Joan

    Trinity College Graduation Information (M.A. & Higher) Contents Congregations of the Regent House ....................................................................................................................................................... 7 #12;2 | P a g e Congregations of the Regent House Any member of Trinity College who has fulfilled

  12. Study Guide for Calculus for Technology I, MA 16010

    E-Print Network [OSTI]

    2015-01-22T23:59:59.000Z

    The current text used for MA16010 as well as the course web page are listed below ... comes from the book listed below, which contains all the topics covered in.

  13. Study Guide for Introductory Analysis II, MA 16021

    E-Print Network [OSTI]

    2014-08-12T23:59:59.000Z

    The current text used for MA16021 as well as the course web page are listed ... Topic. 1-3. Integration by substituion and integration by parts. 4-5. Integration of ...

  14. Study Guide for Calculus for Technology II, MA 16020

    E-Print Network [OSTI]

    2014-08-14T23:59:59.000Z

    The current text used for MA16020 as well as the course web page are listed ... of the text comes from the book listed below, which contains most of the topics.

  15. Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

    E-Print Network [OSTI]

    Coldren, Larry A.

    Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system Erik J InGaAs/InGaAsP/InGaP material system. © 2005 American Institute of Physics. DOI: 10 of achieving QWI in such active regions.3,4 However, InGaAs/InGaAsP/InGaP-based de- vices offer numerous

  16. MaRIE theory, modeling and computation roadmap executive summary

    SciTech Connect (OSTI)

    Lookman, Turab [Los Alamos National Laboratory

    2010-01-01T23:59:59.000Z

    The confluence of MaRIE (Matter-Radiation Interactions in Extreme) and extreme (exascale) computing timelines offers a unique opportunity in co-designing the elements of materials discovery, with theory and high performance computing, itself co-designed by constrained optimization of hardware and software, and experiments. MaRIE's theory, modeling, and computation (TMC) roadmap efforts have paralleled 'MaRIE First Experiments' science activities in the areas of materials dynamics, irradiated materials and complex functional materials in extreme conditions. The documents that follow this executive summary describe in detail for each of these areas the current state of the art, the gaps that exist and the road map to MaRIE and beyond. Here we integrate the various elements to articulate an overarching theme related to the role and consequences of heterogeneities which manifest as competing states in a complex energy landscape. MaRIE experiments will locate, measure and follow the dynamical evolution of these heterogeneities. Our TMC vision spans the various pillar science and highlights the key theoretical and experimental challenges. We also present a theory, modeling and computation roadmap of the path to and beyond MaRIE in each of the science areas.

  17. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23T23:59:59.000Z

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  18. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01T23:59:59.000Z

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  19. AlGaAs/InGaAs/AlGaAs Double Barrier

    E-Print Network [OSTI]

    Perera, A. G. Unil

    -state Er. Tunneling Quantum Dot Sensors for Multi-band Infrared and Terahertz Radiation Detection G radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due

  20. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells...

  1. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

    2010-10-14T23:59:59.000Z

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  2. Small-signal modulation and differential gain of red-emitting (??=?630?nm) InGaN/GaN quantum dot lasers

    SciTech Connect (OSTI)

    Frost, Thomas; Banerjee, Animesh; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2013-11-18T23:59:59.000Z

    We report small-signal modulation bandwidth and differential gain measurements of a ridge waveguide In{sub 0.4}Ga{sub 0.6}N/GaN quantum dot laser grown by molecular beam epitaxy. The laser peak emission is at ??=?630?nm. The ?3?dB bandwidth of an 800??m long device was measured to be 2.4?GHz at 250?mA under pulsed biasing, demonstrating the possibility of high-speed operation of these devices. The differential gain was measured to be 5.3?×?10{sup ?17}?cm{sup 2}, and a gain compression factor of 2.87?×?10{sup ?17}?cm{sup 3} is also derived from the small-signal modulation response.

  3. PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS

    E-Print Network [OSTI]

    McCluskey, Matthew

    -µm thick GaN layer deposited on a sapphire substrate, and it is capped by a 0.2-µm GaN:Mg pPRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS W. Shan,* J.W. Ager pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied

  4. Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1

    E-Print Network [OSTI]

    As, Donat Josef

    ) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN

  5. InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular; accepted 17 November 1995 The growth and device characterization of an InGaP/GaAs double-quality phosphorus-containing compounds.1­4 The growth of high-performance InGaP/ GaAs and InGaAs/InP single

  6. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P. C. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Baca, A. G. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Li, N. Y. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Xie, X. M. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Hou, H. Q. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Armour, E. [Emcore Corporation, Somerset, New Jersey 08873 (United States)] [Emcore Corporation, Somerset, New Jersey 08873 (United States)

    2000-04-17T23:59:59.000Z

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

  7. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-10T23:59:59.000Z

    The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.

  8. Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

    E-Print Network [OSTI]

    Sirenko, Andrei

    Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well MQW structures grown on the sidewalls of 10- m-wide triangular GaN ridges with 1-1.1 facets. Samples were produced

  9. GaN0.011P0.989–GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

    E-Print Network [OSTI]

    Tu, Charles W

    2000-01-01T23:59:59.000Z

    and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)

  10. Cavity design for improved electrical injection in InAlGaP/AlGaAs visible (639--661 nm) vertical-cavity surface-emitting laser diodes

    SciTech Connect (OSTI)

    Schneider, R.P. Jr.; Lott, J.A. (Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States))

    1993-08-16T23:59:59.000Z

    A novel optical cavity design for improved electrical injection in visible vertical-cavity surface-emitting laser (VCSEL) diodes employing an InGaP/InAlGaP strained quantum-well active optical cavity and AlAs/Al[sub 0.5]Ga[sub 0.5]As distributed Bragg reflectors (DBRs) is described. The cavity design was determined by measuring the lasing threshold current density of visible edge-emitting laser diodes with AlAs/Al[sub 0.5]Ga[sub 0.5]As DBR cladding layers. By inserting InAlP spacer layers between the active region and the DBR cladding, significant improvement in the performance of the edge-emitting lasers was achieved. This approach was then applied to the design of visible VCSEL diodes, and resulted in the first demonstration of room-temperature electrically injected lasing, over the wavelength range 639--661 nm. The visible VCSELs, with a diameter of 20 [mu]m, exhibit pulsed output power of 3.4 mW at 650 nm, and continue to lase at a duty cycle of 40%. The threshold current was 30 mA, with a low threshold voltage (2.7 V) and low series resistance ([lt]15 [Omega]).

  11. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.

    2000-01-11T23:59:59.000Z

    The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.

  12. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Mazumder, B.; Hurni, C. A.; Zhang, J. Y.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, M. H.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2012-08-27T23:59:59.000Z

    In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.

  13. Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J.; Takamoto, T. [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan); Ikeda, E.; Kurita, H. [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)

    1997-03-01T23:59:59.000Z

    The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}

  14. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  15. Glass, Brian 1 BRIAN DANIEL GLASS, M.A.

    E-Print Network [OSTI]

    Maddox, W. Todd

    Glass, Brian 1 BRIAN DANIEL GLASS, M.A. University Department of Psychology, A8000 The University of Texas at Austin Austin, TX 78712 (512) 232-2883 e-mail: glass@mail.utexas.edu EDUCATION 2006 ­ Cognitive include: Designing and constructing experiments, statistical #12;Glass, Brian 2 analysis, manuscript

  16. Glass, Brian 1 BRIAN DANIEL GLASS, M.A.

    E-Print Network [OSTI]

    Maddox, W. Todd

    Glass, Brian 1 BRIAN DANIEL GLASS, M.A. University Department of Psychology, A8000 The University Making, The University of Texas at Austin #12;Glass, Brian 2 Duties include: Designing and constructing, constructing, and running experiments, statistical analysis. JOURNAL PUBLICATIONS Glass, B. D., Chotibut, T

  17. Glass, Brian 1 BRIAN DANIEL GLASS, M.A.

    E-Print Network [OSTI]

    Maddox, W. Todd

    Glass, Brian 1 BRIAN DANIEL GLASS, M.A. University Department of Psychology, A8000 The University of Categorization and Decision Making, The University of Texas at Austin #12;Glass, Brian 2 Duties include: Programming, constructing, and running experiments, statistical analysis. JOURNAL PUBLICATIONS Glass, B. D

  18. MA10209 Algebra 1A Counting Partitions: GCS

    E-Print Network [OSTI]

    Smith, Geoff

    a slightly different question. How many ways are there to partition five people into three teams, one of sizeMA10209 Algebra 1A Counting Partitions: GCS 30-x-11 The course website is http://people on enumerating partitions. Suppose that you have five people, and you wish to put them into three teams: a blue

  19. ON SOLAR NEUTRINO PROBLEM TIAN MA AND SHOUHONG WANG

    E-Print Network [OSTI]

    ON SOLAR NEUTRINO PROBLEM TIAN MA AND SHOUHONG WANG Abstract. The current neutrino oscillation an alternative resolution to the solar neutrino loss problem. Contents 1. Introduction 1 2. Discrepancy of Solar, there are three flavors of neutrinos: the electron neutrino e, the tau neutrino and the mu neutrino µ. The solar

  20. MA STER'S THESIS Optimisation of fresh water consumption

    E-Print Network [OSTI]

    Patriksson, Michael

    MA STER'S THESIS Optimisation of fresh water consumption for Doggy AB using simulation Maja Olsson Göteborg Sweden 2005 #12;Thesis for the Degree of Master of Science Optimisation of fresh water consumption Göteborg 2005 #12;Abstract Doggy AB is the only Swedish producer of tinned pet food. In the food process

  1. Data Update for Thompson Island, Boston Harbor, MA August 2008

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA August 2008 Prepared for Massachusetts 2008 This update summarizes the monthly data results for the Thompson Island monitoring site in Boston this maintenance. Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island for the month

  2. Data Update for Thompson Island, Boston Harbor, MA January 2008

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA January 2008 Prepared for Massachusetts for January 2008 This update summarizes the monthly data results for the Thompson Island monitoring site is a graph of wind speed at Thompson Island for the month of January 2008, at the highest anemometer height

  3. Data Update for Thompson Island, Boston Harbor, MA February 2007

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA February 2007 Prepared for Massachusetts for February 2007 This update summarizes the monthly data results for the Thompson Island monitoring site speed at Thompson Island for the month of February 2007, at the highest anemometer height of 40 m. #12;

  4. Data Update for Thompson Island, Boston Harbor, MA October 2007

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA October 2007 Prepared for Massachusetts for October 2007 This update summarizes the monthly data results for the Thompson Island monitoring site speed at Thompson Island for the month of October 2007, at the highest anemometer height of 40 m. #12;

  5. Data Update for Thompson Island, Boston Harbor, MA November 2008

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA November 2008 Prepared for Massachusetts for November 2008 This update summarizes the monthly data results for the Thompson Island monitoring site is a graph of wind speed at Thompson Island for the month of November 2008, at the highest anemometer height

  6. Data Update for Thompson Island, Boston Harbor, MA November 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA November 2006 Prepared for Massachusetts for November 2006 This update summarizes the monthly data results for the Thompson Island monitoring site speed at Thompson Island for the month of November 2006, at the highest anemometer height of 40 m

  7. Data Update for Thompson Island, Boston Harbor, MA November 2007

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA November 2007 Prepared for Massachusetts for November 2007 This update summarizes the monthly data results for the Thompson Island monitoring site Data Time Series Seen below is a graph of wind speed at Thompson Island for the month of November 2007

  8. Data Update for Thompson Island, Boston Harbor, MA September 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA September 2005 Prepared for Massachusetts for September 2005 This update summarizes the monthly data results for the Thompson Island monitoring site no maintenance issues to report. Monthly Data Time Series #12;Seen below is a graph of wind speed at Thompson

  9. Data Update for Thompson Island, Boston Harbor, MA December 2007

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA December 2007 Prepared for Massachusetts for December 2007 This update summarizes the monthly data results for the Thompson Island monitoring site. Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island for the month of December

  10. Data Update for Thompson Island, Boston Harbor, MA January 2007

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA January 2007 Prepared for Massachusetts for January 2007 This update summarizes the monthly data results for the Thompson Island monitoring site speed at Thompson Island for the month of January 2007, at the highest anemometer height of 40 m. #12;

  11. Data Update for Thompson Island, Boston Harbor, MA December 2008

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA December 2008 Prepared for Massachusetts for December 2008 This update summarizes the monthly data results for the Thompson Island monitoring site is a graph of wind speed at Thompson Island for the month of December 2008, at the highest anemometer height

  12. Data Update for Thompson Island, Boston Harbor, MA November 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA November 2005 Prepared for Massachusetts for November 2005 This update summarizes the monthly data results for the Thompson Island monitoring site during the spring of 2006. Monthly Data Time Series Seen below is a graph of wind speed at Thompson

  13. Data Update for Thompson Island, Boston Harbor, MA October 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA October 2006 Prepared for Massachusetts for October 2006 This update summarizes the monthly data results for the Thompson Island monitoring site speed at Thompson Island for the month of October 2006, at the highest anemometer height of 40 m

  14. Data Update for Thompson Island, Boston Harbor, MA September 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA September 2006 Prepared for Massachusetts for September 2006 This update summarizes the monthly data results for the Thompson Island monitoring site speed at Thompson Island for the month of September 2006, at the highest anemometer height of 40 m

  15. Data Update for Thompson Island, Boston Harbor, MA August 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA August 2006 Prepared for Massachusetts for August 2006 This update summarizes the monthly data results for the Thompson Island monitoring site Seen below is a graph of wind speed at Thompson Island for the month of August 2006, at the highest

  16. Data Update for Thompson Island, Boston Harbor, MA September 2007

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA September 2007 Prepared for Massachusetts for September 2007 This update summarizes the monthly data results for the Thompson Island monitoring site speed at Thompson Island for the month of September 2007, at the highest anemometer height of 40 m. #12;

  17. Data Update for Thompson Island, Boston Harbor, MA February 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA February 2006 Prepared for Massachusetts for February 2006 This update summarizes the monthly data results for the Thompson Island monitoring site of 2006. · Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island for the month

  18. Data Update for Thompson Island, Boston Harbor, MA October 2008

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA October 2008 Prepared for Massachusetts for October 2008 This update summarizes the monthly data results for the Thompson Island monitoring site issues arose this month. Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island

  19. Data Update for Thompson Island, Boston Harbor, MA August 2007

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA August 2007 Prepared for Massachusetts 2007 This update summarizes the monthly data results for the Thompson Island monitoring site in Boston Time Series Seen below is a graph of wind speed at Thompson Island for the month of August 2007

  20. Data Update for Thompson Island, Boston Harbor, MA September 2008

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA September 2008 Prepared for Massachusetts for September 2008 This update summarizes the monthly data results for the Thompson Island monitoring site issues arose this month. Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island

  1. Data Update for Thompson Island, Boston Harbor, MA December 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA December 2006 Prepared for Massachusetts for December 2006 This update summarizes the monthly data results for the Thompson Island monitoring site speed at Thompson Island for the month of December 2006, at the highest anemometer height of 40 m

  2. Data Update for Thompson Island, Boston Harbor, MA August 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA August 2005 Prepared for Massachusetts for August 2005 This update summarizes the monthly data results for the Thompson Island monitoring site no maintenance issues to report. Monthly Data Time Series #12;Seen below is a graph of wind speed at Thompson

  3. Data Update for Thompson Island, Boston Harbor, MA January 2006

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA January 2006 Prepared for Massachusetts for January 2006 This update summarizes the monthly data results for the Thompson Island monitoring site. · Monthly Data Time Series Seen below is a graph of wind speed at Thompson Island for the month of January

  4. Data Update for Thompson Island, Boston Harbor, MA December 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA December 2005 Prepared for Massachusetts for December 2005 This update summarizes the monthly data results for the Thompson Island monitoring site during the spring of 2006. Monthly Data Time Series Seen below is a graph of wind speed at Thompson

  5. Data Update for Thompson Island, Boston Harbor, MA October 2005

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA October 2005 Prepared for Massachusetts for October 2005 This update summarizes the monthly data results for the Thompson Island monitoring site no maintenance issues to report. #12;Monthly Data Time Series Seen below is a graph of wind speed at Thompson

  6. Data Update for Thompson Island, Boston Harbor, MA February 2008

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    Data Update for Thompson Island, Boston Harbor, MA February 2008 Prepared for Massachusetts for February 2008 This update summarizes the monthly data results for the Thompson Island monitoring site is a graph of wind speed at Thompson Island for the month of February 2008, at the highest anemometer height

  7. Engineering Ethics Richard A. Burgess, M.A.

    E-Print Network [OSTI]

    Gelfond, Michael

    Engineering Ethics Richard A. Burgess, M.A. Texas Tech T-STEM Center and Deputy Director, National Institute for Engineering Ethics Summer 2012 #12;STEM includes Engineering · No single profession impacts modern life as thoroughly as engineering does. (examples: cars, buildings, electronic devices, water

  8. MA50177: Scientific Computing Nuclear Reactor Simulation Generalised Eigenvalue Problems

    E-Print Network [OSTI]

    Wirosoetisno, Djoko

    MA50177: Scientific Computing Case Study Nuclear Reactor Simulation ­ Generalised Eigenvalue of a malfunction or of an accident experimentally, the numerical simulation of nuclear reactors is of utmost balance in a nuclear reactor are the two-group neutron diffusion equations -div (K1 u1) + (a,1 + s) u1 = 1

  9. Lena Qiying Ma Page 1 Total publications 177

    E-Print Network [OSTI]

    Jawitz, James W.

    ) 1. Ma, L.Q. J.C. Bonzongo and B. Gao. Environmental impacts of coal combustion residues in Florida. Education Ph.D. & M.S. 05/1991 & 12/1988. Colorado State University. Environmental Soil Chemistry. B.S. 07 (5 journals): Science Total Environment (05-present), Environmental Experiment Bot. (08-present), J

  10. THOMAS J. FALEN, DHSc, MA, RHIA 2718 TREMONT DRIVE

    E-Print Network [OSTI]

    Wu, Shin-Tson

    C Health Record Organization and Management HIM 4226C Coding Procedures I (ICD-9-CM) HIM 4256C University Mesa, Arizona March 2014 M.A. Health Services Management Webster University Orlando, Florida May 1995 R.H.I.A. Registered Health Information Administrator October 1989 B.S. Medical Records

  11. MA 747, Spring 2012 Probability and Stochastic Process II

    E-Print Network [OSTI]

    Ito, Kazufumi

    MA 747, Spring 2012 Probability and Stochastic Process II Lecture Notes and Reference book The course will be based on the lecture notes and the reference book: Stochastic Processes, S.R.S. Varadhan theory needed for advanced applications in stochastic processes. It provides the basic probability theory

  12. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Logo GaN nanowires show more 3D piezoelectricity than bulk GaN admin / January 11, 2012 individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D. This is in spite of the fact that each nanowire only measures 100nm in diameter. While GaN is ubiquitous in optoelectronic

  13. Self-aligned AlGaN/GaN transistors for sub-mm wave applications

    E-Print Network [OSTI]

    Saadat, Omair I

    2010-01-01T23:59:59.000Z

    This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

  14. Invited Paper GaN HEMT reliability

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Invited Paper GaN HEMT reliability J.A. del Alamo *, J. Joh Microsystems Technology Laboratories mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier

  15. Single-growth embedded epitaxy AlGaAs injection lasers with extremely low threshold currents

    SciTech Connect (OSTI)

    Katz, J.; Margalit, S.; Wilt, D.; Chen, P.C.; Yariv, A.

    1980-12-01T23:59:59.000Z

    A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide has been developed. The new structure is fabricated using a single step of epitaxial growth. Lasers with threshold currents as low as 9.5 mA (150 ..mu..m long) were obtained. These lasers exhibit operation in a single spatial and longitudinal mode, have differential quantum efficiencies exceeding 45%, and a characteristic temperature of 175/sup 0/ C. They emit more than 12 mW/facet of optical power without any kinks.

  16. Low threshold InGaAsP terrace mass transport laser on semi-insulating substrate

    SciTech Connect (OSTI)

    Chen, T.R.; Chiu, L.C.; Yu, K.L.; Koren, U.; Hasson, A.; Margalit, S.; Yariv, A.

    1982-12-15T23:59:59.000Z

    Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated using the mass transport technique. The fabrication process involves a single-step liquid phase epitaxial (LPE) growth followed by a mass transport of InP at approx.675 /sup 0/C in the presence of an InP cover wafer. Lasers operating in the fundamental transverse mode with smooth far-field patterns and threshold currents as low as 9.5 mA have been obtained.

  17. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  18. Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors

    E-Print Network [OSTI]

    Jungwirth, T.; Wang, KY; Masek, J.; Edmonds, KW; Konig, J.; Sinova, Jairo; Polini, M.; Goncharuk, NA; MacDonald, AH; Sawicki, M.; Rushforth, AW; Campion, RP; Zhao, LX; Foxon, CT; Gallagher, BL.

    2005-01-01T23:59:59.000Z

    . DOI: 10.1103/PhysRevB.72.165204 PACS number#1;s#2;: 75.50.Pp, 75.30.Gw, 73.61.Ey I. INTRODUCTION After some frustration in the community caused by the difficulties encountered in overcoming the apparent Curie temperature limit in #1;Ga,Mn#2;As...Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors T. Jungwirth,1,2 K. Y. Wang,2 J. Ma?ek,3 K. W. Edmonds,2 J?rgen K?nig, 4 Jairo Sinova,5 M. Polini,6 N. A. Goncharuk,1 A. H. MacDonald,7 M. Sawicki,8 A. W. Rushforth,2 R. P...

  19. InAs=InGaP=GaAs heterojunction power Schottky rectifiers

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InAs=InGaP=GaAs heterojunction power Schottky rectifiers A. Chen, M. Young and J.M. Woodall A low-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier

  20. Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs Rajkumar Santhakumar, Yi have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. Index Terms -- GaN

  1. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

    E-Print Network [OSTI]

    Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Qimin Yan,1,a Patrick November 2010 The effect of strain on the valence-band structure of 112¯2 semipolar InGaN grown on GaN D6 is calculated for GaN and InN using density functional theory with the Heyd­Scuseria­ Ernzerhof

  2. GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges

    E-Print Network [OSTI]

    Perera, A. G. Unil

    GaN/AlGaN heterojunction infrared detector responding in 8­14 and 20­70 m ranges G. Ariyawansa, M October 2006 A GaN/AlGaN heterojunction interfacial work function internal photoemission infrared detector, the work demonstrates 54 m 5.5 THz operation of the detector based on 1s­2p± transition of Si donors in GaN

  3. Psychiatric Bulletin (2006), 30,1^2 COLIN O'GA R A A ND MA RCU S MUNA FO'

    E-Print Network [OSTI]

    of cigarette smoking and tobacco addiction. Smoking in schizophrenia and depression is thought in part to repre with such high smoking rates, we have a duty of care to protect them from the ill effects of tobacco smoke. Our efforts should include informing patients of the best treatments available and directing them

  4. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  5. A Theological Argument for an Everett Multiverse

    E-Print Network [OSTI]

    Page, Don N

    2012-01-01T23:59:59.000Z

    Science looks for the simplest hypotheses to explain observations. Starting with the simple assumption that {\\em the actual world is the best possible world}, I sketch an {\\it Optimal Argument for the Existence of God}, that the sufferings in our universe would not be consistent with its being alone the best possible world, but the total world could be the best possible if it includes an omnipotent, omniscient, omnibenevolent God who experiences great value in creating and knowing a universe with great mathematical elegance, even though such a universe has suffering. God seems loathe to violate elegant laws of physics that He has chosen to use in His creation, such as Maxwell's equations for electromagnetism or Einstein's equations of general relativity for gravity within their classical domains of applicability, even if their violation could greatly reduce human suffering (e.g., from falls). If indeed God is similarly loathe to violate quantum unitarity (though such violations by judicious collapses of the w...

  6. Everett, Washington: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualPropertyd8c-a9ae-f8521cbb8489 NoEurope BV Jump to: navigation, search

  7. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

    SciTech Connect (OSTI)

    Chen, Z.; Denbaars, S. P. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Keller, S.; Mishra, U. K. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chung, R.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-03-16T23:59:59.000Z

    Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm{sup 2}/V s. High electron mobility transistors (HEMTs) with 0.65 {mu}m long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

  8. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Huajie Chen, Kista, Sweden Abstract Strain-compensated InGaAsP/InGaP superlattices are studied in cross- section. The strain compensated InGaAsP/InGaP/InP superlattices studied here have application for light sources

  9. AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN

  10. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  11. In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a

    E-Print Network [OSTI]

    Yang, Kyounghoon

    205 Abstract In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device basedBm at 2 GHz have been demonstrated from the fabricated device. 1. Introduction In recent years, AlGaN/GaN noise amplifier and switch. Superior results have been reported in microwave power performance of AlGaN/GaN

  12. A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate

  13. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate,

    E-Print Network [OSTI]

    Boyer, Edmond

    Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Aristide Briand, 92.195 Meudon, France Abstract. Wide bandgap devices such as AlGaN/GaN High Electron of GR- bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR

  14. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2012-12-24T23:59:59.000Z

    Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

  15. High efficiency InGaP solar cells for InGaP/GaAs tandem cell application

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H.; Ohmori, M. [Japan Energy Corp., Toda, Saitama (Japan). Central Research Lab.

    1994-12-31T23:59:59.000Z

    In this paper, high conversion efficiency single junction InGaP solar cells with n-p-p{sup +} structure are presented and their application to InGaP/GaAs monolithic tandem cells is discussed. In the InGaP cells, a best conversion efficiency of 18.48% was achieved by introducing the p{sup +} peak back surface field (BSF) layer with a high carrier concentration of 2 {times} 10{sup 18} cm{sup {minus}3}, which improved both short circuit current (Isc) and open circuit voltage (Voc). However, in the case of InGaP/GaAs tandem cells, a decrease in carrier concentration of the InGaP BSF layer, which was caused by the diffusion of Zn, was found to reduce the Isc and Voc of the tandem cell. The reduction in the carrier concentration was suppressed by using a thicker BSF layer of 0.5 {micro}m, which reduced the current density in the GaAs bottom cell. An InGaP/GaAs tandem cell with 27.3% efficiency and a high Voc of 2.418 V was obtained.

  16. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

    E-Print Network [OSTI]

    Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP

  17. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates

    E-Print Network [OSTI]

    Manfra, Michael J.

    PS-4 AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates Nils ABSTRACT Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established, and HVPE SI-GaN templates on sapphire. While sapphire and SI-Sic are established substrates for the growth

  18. ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    MOSCAP process ?ow: n-GaN substrate; Ohmic metallization andtion for a AlGaN/ GaN HEMT on a substrate which has a poorsapphire substrate, a well-passivated AlGaN/ GaN HEMT grown

  19. Green light emission by InGaN/GaN multiple-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)] [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Hsu, Gary Z. L. [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)] [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)

    2014-03-10T23:59:59.000Z

    The high-quality In{sub x}Ga{sub 1?x}N/GaN multiple quantum wells were grown on GaN microdisks with ?-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1?x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192?eV) emitted from the In{sub x}Ga{sub 1?x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383?eV) from GaN.

  20. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  1. Experimental Physical Sciences Vistas: MaRIE (draft)

    SciTech Connect (OSTI)

    Shlachter, Jack [Los Alamos National Laboratory

    2010-09-08T23:59:59.000Z

    To achieve breakthrough scientific discoveries in the 21st century, a convergence and integration of world-leading experimental facilities and capabilities with theory, modeling, and simulation is necessary. In this issue of Experimental Physical Sciences Vistas, I am excited to present our plans for Los Alamos National Laboratory's future flagship experimental facility, MaRIE (Matter-Radiation Interactions in Extremes). MaRIE is a facility that will provide transformational understanding of matter in extreme conditions required to reduce or resolve key weapons performance uncertainties, develop the materials needed for advanced energy systems, and transform our ability to create materials by design. Our unique role in materials science starting with the Manhattan Project has positioned us well to develop a contemporary materials strategy pushing the frontiers of controlled functionality - the design and tailoring of a material for the unique demands of a specific application. Controlled functionality requires improvement in understanding of the structure and properties of materials in order to synthesize and process materials with unique characteristics. In the nuclear weapons program today, improving data and models to increase confidence in the stockpile can take years from concept to new knowledge. Our goal with MaRIE is to accelerate this process by enhancing predictive capability - the ability to compute a priori the observables of an experiment or test and pertinent confidence intervals using verified and validated simulation tools. It is a science-based approach that includes the use of advanced experimental tools, theoretical models, and multi-physics codes, simultaneously dealing with multiple aspects of physical operation of a system that are needed to develop an increasingly mature predictive capability. This same approach is needed to accelerate improvements to other systems such as nuclear reactors. MaRIE will be valuable to many national security science challenges. Our first issue of Vistas focused on our current national user facilities (the Los Alamos Neutron Science Center [LANSCE], the National High Magnetic Field Laboratory-Pulsed Field Facility, and the Center for Integrated Nanotechnologies) and the vitality they bring to our Laboratory. These facilities are a magnet for students, postdoctoral researchers, and staff members from all over the world. This, in turn, allows us to continue to develop and maintain our strong staff across the relevant disciplines and conduct world-class discovery science. The second issue of Vistas was devoted entirely to the Laboratory's materials strategy - one of the three strategic science thrusts for the Laboratory. This strategy has helped focus our thinking for MaRIE. We believe there is a bright future in cutting-edge experimental materials research, and that a 21st-century facility with unique capability is necessary to fulfill this goal. The Laboratory has spent the last several years defining MaRIE, and this issue of Vistas presents our current vision of that facility. MaRIE will leverage LANSCE and our other user facilities, as well as our internal and external materials community for decades to come, giving Los Alamos a unique competitive advantage, advancing materials science for the Laboratory's missions and attracting and recruiting scientists of international stature. MaRIE will give the international materials research community a suite of tools capable of meeting a broad range of outstanding grand challenges.

  2. Ion-induced swelling of ODS ferritic alloy MA957 tubing to 500...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ion-induced swelling of ODS ferritic alloy MA957 tubing to 500 dpa. Ion-induced swelling of ODS ferritic alloy MA957 tubing to 500 dpa. Abstract: In order to study the potential...

  3. MaGKeyS : a haptic guidance keyboard system for facilitating sensorimotor training and rehabilitation

    E-Print Network [OSTI]

    Lewiston, Craig Edwin

    2009-01-01T23:59:59.000Z

    The Magnetic Guidance Keyboard System (MaGKeyS) embodies a new haptic guidance technology designed to facilitate sensorimotor training and rehabilitation. MaGKeyS works by employing active magnetic force to guide finger ...

  4. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Agui, T. [Japan Energy Corp., Toda, Saitama (Japan)] [and others

    1997-12-31T23:59:59.000Z

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  5. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20T23:59:59.000Z

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  6. Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

    SciTech Connect (OSTI)

    Roul, Basanta; Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Kalghatgi, A. T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Kumar, Nitesh; Sundaresan, A. [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)

    2011-10-17T23:59:59.000Z

    We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

  7. Cell cycle-dependent SUMO-1 conjugation to nuclear mitotic apparatus protein (NuMA)

    SciTech Connect (OSTI)

    Seo, Jae Sung; Kim, Ha Na; Kim, Sun-Jick; Bang, Jiyoung; Kim, Eun-A; Sung, Ki Sa [Department of Biological Sciences, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)] [Department of Biological Sciences, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yoon, Hyun-Joo [TissueGene Inc. 9605 Medical Center Dr., Rockville, MD 20850 (United States)] [TissueGene Inc. 9605 Medical Center Dr., Rockville, MD 20850 (United States); Yoo, Hae Yong [Department of Health Sciences and Technology, Samsung Advanced Institute for Health Sciences and Technology, Samsung Medical Center, Sungkyunkwan University, Seoul 135-710 (Korea, Republic of)] [Department of Health Sciences and Technology, Samsung Advanced Institute for Health Sciences and Technology, Samsung Medical Center, Sungkyunkwan University, Seoul 135-710 (Korea, Republic of); Choi, Cheol Yong, E-mail: choicy@skku.ac.kr [Department of Biological Sciences, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-01-03T23:59:59.000Z

    Highlights: •NuMA is modified by SUMO-1 in a cell cycle-dependent manner. •NuMA lysine 1766 is the primary target site for SUMOylation. •SUMOylation-deficient NuMA induces multiple spindle poles during mitosis. •SUMOylated NuMA induces microtubule bundling. -- Abstract: Covalent conjugation of proteins with small ubiquitin-like modifier 1 (SUMO-1) plays a critical role in a variety of cellular functions including cell cycle control, replication, and transcriptional regulation. Nuclear mitotic apparatus protein (NuMA) localizes to spindle poles during mitosis, and is an essential component in the formation and maintenance of mitotic spindle poles. Here we show that NuMA is a target for covalent conjugation to SUMO-1. We find that the lysine 1766 residue is the primary NuMA acceptor site for SUMO-1 conjugation. Interestingly, SUMO modification of endogenous NuMA occurs at the entry into mitosis and this modification is reversed after exiting from mitosis. Knockdown of Ubc9 or forced expression of SENP1 results in impairment of the localization of NuMA to mitotic spindle poles during mitosis. The SUMOylation-deficient NuMA mutant is defective in microtubule bundling, and multiple spindles are induced during mitosis. The mitosis-dependent dynamic SUMO-1 modification of NuMA might contribute to NuMA-mediated formation and maintenance of mitotic spindle poles during mitosis.

  8. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  9. September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN as etch-stop layer

    E-Print Network [OSTI]

    Pala, Nezih

    0 2 V(V) C(pF) Before etching (material) After etching (device) G AlGaN substrate i-GaN DS AlN AlGaN substrate AlN i-GaN AlGaN S G DAlGaNAlGaN InGaNInGaN Standard gate recess InGaN stop layer gate recess InGaNICNS 7 September 16-21, 2007 ­ Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN

  10. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department March 2005 Titanium dioxide TiO2, with the rutile structure was grown on 0001 oriented GaN and 0001 Al0.33Ga0.67N/GaN heterostructure field effect transistor HFET structures by molecular beam epitaxy. X

  11. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    E-Print Network [OSTI]

    Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial p­i­n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1Ŕx N/GaN undoped QW system is coated over both

  12. High density plasma damage in InGaP/GaAs as AlGaAs/GaAs high electron mobility transistors

    SciTech Connect (OSTI)

    Lee, J.W.; Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F.; Kopf, R.F.; Kuo, J.M. [Bell Labs., Murray Hill, NJ (United States). Lucent Technologies; Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); Constantine, C.; Johnson, D. [Plasma-Therm Inc., St. Petersburg, FL (United States)

    1998-11-01T23:59:59.000Z

    The introduction of plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors (HEMTs) has been investigated using both inductively coupled plasma and electron cyclotron resonance Ar discharges. The saturated drain-source current is found to be decreased through introduction of compensating deep levels into the InGaP or AlGaAs donor layer. The degradation of device performance is a strong function of ion energy and ion flux, and an advantage of both high density plasma tools is that ion energy can be reduced by increasing the plasma density. Increasing process pressure and source power, and decreasing radio-frequency chuck power produce the lowest amounts of plasma damage in HEMTs.

  13. Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates

    E-Print Network [OSTI]

    Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates, around 104 cm-2 . The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP. High surface roughness and branch defects in Al InGaP lead to the lowest quality virtual substrates we

  14. Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method

    E-Print Network [OSTI]

    Okamoto, Koichi

    Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method; 78.55.Cr; 78.67.De; S7.14 Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using inhomogeneity of In composition. Recently, InGaN/GaN-based light emitting diodes (LEDs) have been commercialized

  15. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

    E-Print Network [OSTI]

    Chung, Jinwook

    We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...

  16. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire...

  17. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

    E-Print Network [OSTI]

    Lu, Bin

    AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...

  18. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  19. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-21T23:59:59.000Z

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1?x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1?y}N templates for x?>?y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1?x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1?y}N template. Growth of the In{sub y}Ga{sub 1?y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1?y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1?x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1?y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

  20. High current gain InGaN=GaN HBTs with C operating temperature

    E-Print Network [OSTI]

    Asbeck, Peter M.

    with an $20 nm low-temperature (Tg Ľ 550 C) GaN buffer layer on a (0001) sapphire substrate. The layer 1018 cmŔ3 Buffer GaN 2.5 mm ­ Substrate Sapphire ­ ­ HBT device processing began by depositing a 100 nmHigh current gain InGaN=GaN HBTs with 300 C operating temperature D.M. Keogh, P.M. Asbeck, T. Chung

  1. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  2. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  3. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  4. FuMA Tech GmbH | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluating A PotentialJumpGermanFife EnergyFreight Best PracticeFrey|FrontierFuMA Tech

  5. EDeMa (Smart Grid Project) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOE FacilityDimondale,South, NewDyer County,ECO2 AssetEDP Renewables NorthEDeMa

  6. DOE - Office of Legacy Management -- Norton Co - MA 12

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling Corp - CT 0-01Naturita36NewNorton Co - MA 12

  7. DOE - Office of Legacy Management -- Tracerlab Inc - MA 11

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling Corp -K LeDowntown SiteTracerlab Inc - MA 11

  8. DOE - Office of Legacy Management -- Watertown Arsenal - MA 02

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling Corp -KWatertown Arsenal - MA 02 FUSRAP

  9. DOE - Office of Legacy Management -- Woburn Landfill - MA 07

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling Corp -KWatertown Arsenal -Center - MA

  10. Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

    SciTech Connect (OSTI)

    Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru; Mushnikov, Nikolai V., E-mail: kleinerman@imp.uran.ru; Stashkova, Liudmila A., E-mail: kleinerman@imp.uran.ru [Institute of Metal Physics UB RAS, S. Kovalevskaya str. 18, 620990 Ekaterinburg (Russian Federation)

    2014-10-27T23:59:59.000Z

    Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mössbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mössbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to enter the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)

  11. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  12. Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots

    E-Print Network [OSTI]

    Fonoberov, Vladimir

    Excitonic properties of strained wurtzite and zinc-blende GaNŐAlxGa1ŔxN quantum dots Vladimir A 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite WZ of GaN QDs.1­8 Molecu- lar beam epitaxial growth in the Stranski­Krastanov mode of wurtzite WZ Ga

  13. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

    E-Print Network [OSTI]

    Feenstra, Randall

    Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices R of Technology, Kista, Sweden Abstract We have investigated the properties of strain-compensated InGaAsP/In- GaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP

  14. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1 , Kristian of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer were exposed to oxygen. True buried heterostructures devices utilising InGaP clad- ding layers have

  15. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates

    E-Print Network [OSTI]

    Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates M. J of unconventional alloys of InGaP with In fraction of 0.2­0.4 grown on fully relaxed GaAsP virtual substrates demonstrate growth of extremely high quality InGaP heterostructures which hold promise for fabrication

  16. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap

  17. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1 G. Ariyawansa,1 online 2 September 2009 A study of trap states in n+ -GaN/AlGaN heterostructures using electrical related absorption centers attributed to shallow Si-donor pinned to the AlGaN barrier , N-vacancy/ C

  18. High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop

    E-Print Network [OSTI]

    Itoh, Tatsuo

    High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers radars and communications systems. GaN-based HEMT's for high power applications at microwave frequencies

  19. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Uren, M. J.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Keller, S.; Kolluri, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)

    2014-08-11T23:59:59.000Z

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

  20. Michael J. Poston Atlanta, GA 30307

    E-Print Network [OSTI]

    Orlando, Thomas

    Page | 1 Michael J. Poston Atlanta, GA 30307 Michael.Poston@gatech.edu Cell: 770.561.4756 U.S. Citizen Education PhD Candidate in Chemistry Georgia Institute of Technology, Atlanta, GA August 2007 with Application to Lunar Observations," JGR ­ Planets, 118, 105, doi: 10.1002/jgre.20025. Poston, M. J

  1. Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

    E-Print Network [OSTI]

    Peale, Robert E.

    of materials systems such as GaAs/AlGaAs,3 InGaP/InGaAs/GaAs,4 GaN/AlGaN,2,5 and Si Ref. 1 have been explored

  2. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  3. Science and Technology of the 10-MA Spherical Tori

    SciTech Connect (OSTI)

    Peng, Y-K.M.

    1999-11-14T23:59:59.000Z

    The Spherical Torus (ST) configuration has recently emerged as an example of confinement concept innovation that enables attractive steps in the development of fusion energy. The scientific potential for the ST has been indicated by recent encouraging results from START,2 CDX-U, and HIT. The scientific principles for the D-fueled ST will soon be tested by NSTX (National Spherical Torus Experiment3) in the U.S. and MAST (Mega-Amp Spherical Tokamak4) in the U.K. at the level of l-2 MA in plasma current. More recently, interest has grown in the U.S. in the possibility of near-term ST fusion burn devices at the level of 10 MA in plasma current. The missions for these devices would be to test burning plasma performance in a small, pulsed D-T-fueled ST (i.e., DTST) and to develop fusion energy technologies in a small steady state ST-based Volume Neutron Source (VNS). This paper reports the results of analysis of the key science and technology issues for these devices.

  4. Fusion materials irradiations at MaRIE's fission fusion facility

    SciTech Connect (OSTI)

    Pitcher, Eric J [Los Alamos National Laboratory

    2010-10-06T23:59:59.000Z

    Los Alamos National Laboratory's proposed signature facility, MaRIE, will provide scientists and engineers with new capabilities for modeling, synthesizing, examining, and testing materials of the future that will enhance the USA's energy security and national security. In the area of fusion power, the development of new structural alloys with better tolerance to the harsh radiation environments expected in fusion reactors will lead to improved safety and lower operating costs. The Fission and Fusion Materials Facility (F{sup 3}), one of three pillars of the proposed MaRIE facility, will offer researchers unprecedented access to a neutron radiation environment so that the effects of radiation damage on materials can be measured in-situ, during irradiation. The calculated radiation damage conditions within the F{sup 3} match, in many respects, that of a fusion reactor first wall, making it well suited for testing fusion materials. Here we report in particular on two important characteristics of the radiation environment with relevancy to radiation damage: the primary knock-on atom spectrum and the impact of the pulse structure of the proton beam on temporal characteristics of the atomic displacement rate. With respect to both of these, analyses show the F{sup 3} has conditions that are consistent with those of a steady-state fusion reactor first wall.

  5. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Fujioka, H., E-mail: hfujioka@iis.u-tokyo.ac.jp [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); CREST, Japan Science and Technology Corporation (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)

    2014-05-05T23:59:59.000Z

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3?×?10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  6. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar bandgap range. Index Terms--Epitaxy, GaAsP, InGaP, metamorphic. I. INTRODUCTION TODAY'S highest efficiency

  7. Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Yamaguchi, A.; Isozumi, S.; Komiya, S.

    1985-03-01T23:59:59.000Z

    Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi

  8. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  9. AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh

    E-Print Network [OSTI]

    Itoh, Tatsuo

    AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh Department-mail: ykchung@ee.ucla.edu Abstract - This paper presents the first single-ended AlGaN/GaN heterojunction field, respectively. For the frequency doubler with 1mm gate periphery AlGaN/GaN HFET, conversion gain of 0.17 d

  10. Materials Science and Engineering B59 (1999) 319322 Microcalorimetric absorption spectroscopy in GaNAlGaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    1999-01-01T23:59:59.000Z

    Microcalorimetric measurements of small absorption coefficients have been performed on thin GaN­AlGaN quantum wells in GaN­AlGaN quantum wells Axel Go¨ldner a, *, Axel Hoffmann a , Bernard Gil b , Pierre Lefebvre b at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily

  11. Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors

    E-Print Network [OSTI]

    Dietz, Nikolaus

    substrate. As shown in Fig. 1(a), the device structures consist of a 0.2 m n+ -GaN top contact (emitter.1117/12.828156 Proc. of SPIE Vol. 7467 74670W-1 #12;(a) Sapphire Substrate n GaN Bottom Contact AlxGa1-xN Barrier n GaNAl fraction induced effects on the capacitance characteristics of n+ -GaN/AlxGa1-xN IR detectors

  12. Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

    SciTech Connect (OSTI)

    Koh, Inoue; Yamane, Yasuro; Shiojima, Kenji [NTT LSI Lab., Kanagawa (Japan)] [and others

    1995-12-31T23:59:59.000Z

    This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.

  13. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  14. Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy

    E-Print Network [OSTI]

    in a highly defective GaAs layer.as5 Recently, InGaP light-emitting diodes have been fabricated on Si using

  15. Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

    SciTech Connect (OSTI)

    Du, Chunhua; Ma, Ziguang; Zhou, Junming; Lu, Taiping; Jiang, Yang; Zuo, Peng; Jia, Haiqiang; Chen, Hong, E-mail: hchen@iphy.ac.cn [Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-08-18T23:59:59.000Z

    We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane sapphire substrate. The output power and dominant wavelength at 20?mA are 0.24 mW and 556.3?nm. High resolution x-ray diffraction, photoluminescence, and electroluminescence measurements demonstrate that efficiency enhancement could be partially attributed to crystal quality improvement of the active region resulted from reduced In clusters and relevant defects on the surface of InGaN layer by introducing interruptions. The less tilted energy band in the quantum well is also caused by the decrease of In-content gradient along c-axis resulted from In segregation during the interruptions, which increases spatial overlap of electron-hole wavefunction and thus the internal quantum efficiency. The latter also leads to smaller blueshift of dominant wavelength with current increasing.

  16. High-efficiency radiation-resistant InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T. [Toyota Technological Inst., Tempaku, Nagoya (Japan); [Japan Energy Corp., Toda, Saitama (Japan); Yamaguchi, M.; Taylor, S.J. [Toyota Technological Inst., Tempaku, Nagoya (Japan); Ikeda, E.; Agui, T.; Kurita, H. [Japan Energy Corp., Toda, Saitama (Japan)

    1997-12-31T23:59:59.000Z

    A world-record efficiency of 26.9% (AM0, 28 C) has been obtained for InGaP/GaAs tandem solar cells fabricated by the MOCVD method. The radiation resistance of the InGaP/GaAs tandem solar cells has also been evaluated following 1 MeV electron irradiation. Degradation in the tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell, which features a highly doped base layer. Similar radiation-resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. However, some recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination of forward bias, which causes defect annealing in InGaP cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10{sup 15} electrons cm{sup {minus}2}) has been examined.

  17. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  18. A rational minor actinide (MA) recycling concept based on innovative oxide fuel with high AM content

    SciTech Connect (OSTI)

    Tanaka, Kenya; Sato, Isamu; Ishii, Tetsuya; Yoshimochi, Hiroshi; Asaga, Takeo [Japan Atomic Energy Agency, 4002 Narita-cho, O-arai-machi, Higasiibaraki-gun, Ibaraki-ken, 311-1393 (Japan); Kurosaki, Ken [Osaka University, 2-1 Yamadaoka, Suita-shi, Osaka 565-0871 (Japan)

    2007-07-01T23:59:59.000Z

    A rational MA recycle concept based on high Am content fuel has been proposed. A design study of an Am- MOX fabrication plant, which is a key facility for the MA recycle concept, has been done and the facility concept was clarified from the viewpoint of basic process viability. Preliminary cost estimation suggested that the total construction cost of the MA recycle facilities including Am-MOX, Np-MOX and MA recovery could be comparable with that of the large scale LWR-MOX fabrication plant required for plutonium in LWR fuel cycle. (authors)

  19. Course Syllabus for MA 16100, Fall 2014 Course Objectives: 1. To ...

    E-Print Network [OSTI]

    2014-09-17T23:59:59.000Z

    Course Syllabus for MA 16100, Fall 2014. Course Objectives: 1. To compute limits and to apply limit laws. 2. To apply rules of differentiation to compute ...

  20. Syllabus for MA 16200, Spring 2013 Homework: There are 36 online ...

    E-Print Network [OSTI]

    2013-01-07T23:59:59.000Z

    Syllabus for MA 16200, Spring 2013. Homework: There are 36 online assignments using WebAssign https://www.webassign.net/purdue/login.html. Due dates ...

  1. Purdue University Study Guide for MA 224 (For students who plan to ...

    E-Print Network [OSTI]

    becker

    2004-04-09T23:59:59.000Z

    Study Guide for MA 224 ... homework problems from the assignment sheet and the final exam practice problems pro- vide good preparation for the examination.

  2. Purdue University Study Guide for MA 220 (For students who plan to ...

    E-Print Network [OSTI]

    becker

    2004-04-12T23:59:59.000Z

    Study Guide for MA 220 ... homework problems from the assignment sheet and the final exam practice problems pro- vide good preparation for the examination.

  3. Purdue University Study Guide for MA 222 (For students who plan to ...

    E-Print Network [OSTI]

    becker

    2004-04-09T23:59:59.000Z

    Study Guide for MA 222 ... homework problems from the assignment sheet and the final exam practice problems pro- vide good preparation for the examination.

  4. Purdue University Study Guide for MA 221 (For students who plan to ...

    E-Print Network [OSTI]

    becker

    2004-04-09T23:59:59.000Z

    Study Guide for MA 221 ... homework problems from the assignment sheet and the final exam practice problems pro- vide good preparation for the examination.

  5. 1 Ma 15200 Lesson 18 Section 1.7 I Representing an Inequality ...

    E-Print Network [OSTI]

    charlotb

    2011-02-22T23:59:59.000Z

    1. Ma 15200 Lesson 18 Section 1.7. I. Representing an Inequality. There are 3 ways to represent an inequality. (1) Using the inequality symbol (sometime.

  6. 1 Ma 15200 Lesson 18 Section 1.7 I Representing an Inequality ...

    E-Print Network [OSTI]

    charlotb

    2010-10-04T23:59:59.000Z

    1. Ma 15200 Lesson 18 Section 1.7. I. Representing an Inequality. There are 3 ways to represent an inequality. (1) Using the inequality symbol (sometime.

  7. Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

    E-Print Network [OSTI]

    Alpay, S. Pamir

    Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple InxGa1-xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with ˝1210InGaN//˝1210GaN and ˝0001InGaN//˝0001GaN epitaxial

  8. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  9. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. [National Kaohsiung Normal University, Department of Electronic Engineering (China)], E-mail: jhtsai@nknucc.nknu.edu.tw; Chiu, S.-Y.; Lour, W.-S. [National Taiwan Ocean University, Department of Electrical Engineering (China); Guo, D.-F. [Air Force Academy, Department of Electronic Engineering (China)

    2009-07-15T23:59:59.000Z

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  10. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  11. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2013-05-13T23:59:59.000Z

    Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

  12. InGaN/GaN single-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)

    2012-06-11T23:59:59.000Z

    We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.

  13. Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona

    E-Print Network [OSTI]

    Anderson, Timothy J.

    be grown at lower temperature than by CVD. As example, ALD growth of device quality GaAs, GaP, and InGaP

  14. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  15. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11T23:59:59.000Z

    AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  16. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  17. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01T23:59:59.000Z

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  18. The structure of GaAs/Si(211) heteroepitaxial layers

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.

    1985-05-01T23:59:59.000Z

    Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.

  19. Over 30{percent} efficient InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H. [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan); Ohmori, M. [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)] [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)

    1997-01-01T23:59:59.000Z

    A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28{percent} is realized with a practical large area of 4 cm{sup 2} under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated current in the GaAs bottom cell. {copyright} {ital 1997 American Institute of Physics.}

  20. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  1. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14T23:59:59.000Z

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  2. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    with the active thermoelectric cooling implemented on the same material system can improve the device performance, for the pro- posed cooling system should also be based on GaN. To real- ize this, the high-efficiency Ga,6 Great progress has been achieved in GaN-based microwave technology. GaN transistors with very high

  3. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01T23:59:59.000Z

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  4. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 1. Introduction, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimization based

  5. InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall

    E-Print Network [OSTI]

    Woodall, Jerry M.

    °C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

  6. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer K.M. Groom, B fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement-doped InGaP current blocking layer that also provides optical confinement. This tech- nology relies

  7. GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization

    E-Print Network [OSTI]

    Wetzel, Christian M.

    GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical 12180-3590, U.S.A. ABSTRACT The wide bandgap polar semiconductors GaN and ZnO and their related alloys fields, and surface terminations. With a small lattice mismatch of ~1.8 % between GaN and Zn

  8. Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

    E-Print Network [OSTI]

    Nabben, Reinhard

    Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates: time-resolved photoluminescence, quantum dots, InGaN, Si substrate There exists a strong continuous expensive and are limited in size. Thus, heteroepitaxial growth of GaN on silicon substrates seems

  9. Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    -emitting diodes LEDs on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate an ideal substrate for homoepitaxial growth. Here we study the microstructural properties of green GaInN/GaN-Koehler force10 resulting from a macroscopic relaxation of strain. II. CRYSTAL GROWTH c plane bulk GaN substrate

  10. Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire of GaN-based blue and green LEDs grown on sapphire and GaN substrates using micro-Raman spectroscopy

  11. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

    E-Print Network [OSTI]

    Nabben, Reinhard

    . The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate-grown heterostructures can drastically be reduced by using a template of MOVPE-GaN on the sapphire substrate, which leadsCorrelation between structural properties and optical amplification in InGaN/GaN heterostructures

  12. Development of a Hydronic Rooftop Unit-HyPak-MA

    SciTech Connect (OSTI)

    Eric Lee; Mark Berman

    2009-11-14T23:59:59.000Z

    The majority of U.S. commercial floor space is cooled by rooftop HVAC units (RTUs). RTU popularity derives chiefly from their low initial cost and relative ease of service access without disturbing building occupants. Unfortunately, current RTUs are inherently inefficient due to a combination of characteristics that unnecessarily increase cooling loads and energy use. 36% percent of annual U.S. energy, and two-thirds of electricity, is consumed in and by buildings. Commercial buildings consume approximately 4.2 quads of energy each year at a cost of $230 billion per year, with HVAC equipment consuming 1.2 quads of electricity. More than half of all U.S. commercial floor space is cooled by packaged HVAC units, most of which are rooftop units (RTUs). Inefficient RTUs create an estimated 3.5% of U.S. CO{sub 2} emissions, thus contributing significantly to global warming5. Also, RTUs often fail to maintain adequate ventilation air and air filtration, reducing indoor air quality. This is the second HyPak project to be supported by DOE through NETL. The prior project, referred to as HyPak-1 in this report, had two rounds of prototype fabrication and testing as well as computer modeling and market research. The HyPak-1 prototypes demonstrated the high performance capabilities of the HyPak concept, but made it clear that further development was required to reduce heat exchanger cost and improve system reliability before HyPak commercialization can commence. The HyPak-1 prototypes were limited to about 25% ventilation air fraction, limiting performance and marketability. The current project is intended to develop a 'mixed-air' product that is capable of full 0-100% modulation in ventilation air fraction, hence it was referred to as HyPak-MA in the proposal. (For simplicity, the -MA has been dropped when referencing the current project.) The objective of the HyPak Project is to design, develop and test a hydronic RTU that provides a quantum improvement over conventional RTU performance. Our proposal targeted 60% and 50% reduction in electrical energy use by the HyPak RTU for dry and humid climates, respectively, when compared with a conventional unit, and reduction in peak energy consumption of 50% and 33% respectively. In addition to performance targets, our goal is to develop a production-ready design with durability, reliability and maintainability similar to air-cooled packaged equipment, and that can be commercialized immediately following the conclusion of this project.

  13. Characterization and In-Situ Ion-Irradiation of MA957 ODS Steel Djamel Kaoumi1

    E-Print Network [OSTI]

    Motta, Arthur T.

    Characterization and In-Situ Ion-Irradiation of MA957 ODS Steel Djamel Kaoumi1 , Arthur Motta1 Laboratory, Argonne, IL 060493, USA INTRODUCTION Oxide dispersion strengthened (ODS) Ferritic. EXPERIMENT Material Characterization Prior to Irradiation MA957 ODS alloy (Fe­14Cr­1Ti­0.3Mo­0.25Y2O3

  14. ALL ABOUT THE M.A. IN APPLIED LEGAL STUDIES The Applied Legal Studies Program

    E-Print Network [OSTI]

    1 ALL ABOUT THE M.A. IN APPLIED LEGAL STUDIES The Applied Legal Studies Program This professional. In the case of aspiring Notaries, the degree will prepare students for admission to practice, subject for admission to the applied legal studies program. #12;2 The M.A. in Applied Legal Studies: The Program

  15. New Tertiary paleomagnetic poles from Mongolia and Siberia at 40, 30, 20, and 13 Ma

    E-Print Network [OSTI]

    Cogne, Jean-Pascal

    New Tertiary paleomagnetic poles from Mongolia and Siberia at 40, 30, 20, and 13 Ma: Clues of a paleomagnetic study of 490 cores from 59 sites, corresponding to 52 distinct basaltic flows from Mongolia Tertiary paleomagnetic poles from Mongolia and Siberia at 40, 30, 20, and 13 Ma: Clues on the inclination

  16. The pottery from a fifth century B.C. shipwreck at Ma'agan Michael, Israel

    E-Print Network [OSTI]

    Lyon, Jerry Dean

    1993-01-01T23:59:59.000Z

    Between 1988 and 1990 a shipwreck tentatively dated to the 5th century B.C. was excavated off the coast of Israel at Ma'agan Michael by Dr. Elisha Linder of the Center for Maritime Studies. This study presents one category of material from the Ma...

  17. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04T23:59:59.000Z

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  18. Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

    SciTech Connect (OSTI)

    Mezdrogina, M. M., E-mail: Margaret.M@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kozhanova, Yu. V. [St. Petersburg State Polytechnical University (Russian Federation)

    2013-04-15T23:59:59.000Z

    Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu{sup 3+} and Sm{sup 3+}. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level (>10{sup 23} photons cm{sup -2} s{sup -1}) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.

  19. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    on metamorphic growth of InGaP layers on GaP substrates, astemperature amber photoluminescence from InGaP QWs, grownon a metamorphic InGaP layer. References: Fred Shubert E. ,

  20. Hanford External Dosimetry Technical Basis Manual PNL-MA-842

    SciTech Connect (OSTI)

    Rathbone, Bruce A.

    2005-02-25T23:59:59.000Z

    The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNL’s Hanford External Dosimetry Program which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. Rev. 0 marks the first revision to be released through PNNL’s Electronic Records & Information Capture Architecture (ERICA) database.

  1. ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures Duc-Phuong Nguyen, France We show that the large band offsets between GaN and InN and the heavy carrier effec- tive masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga1-xInxN/GaN

  2. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS Omkar Jani1 with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN.4 eV. InGaN has the appropriate optical properties and has been well demonstrated for light

  3. AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD

    E-Print Network [OSTI]

    Boyer, Edmond

    AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD R. Meunier1 , A, 38054 Grenoble Cedex 9, France 2 LAAS-CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France AlGaN /GaN behavior. Those trapped charges can be associated to the carbon contamination of the AlGaN surface

  4. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

    E-Print Network [OSTI]

    Bowers, John

    Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth S for publication 5 January 1999 The emission mechanisms of bulk GaN and InGaN quantum wells QWs were studied suggest that TDs simply reduce the net volume of light-emitting area. This effect is less pronounced in InGaN

  5. Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

    E-Print Network [OSTI]

    Boyer, Edmond

    , transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compareComparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities SAs and GaN microcavities. PACS numbers: 78.67.-n, 71.36.+c, 78.20.Ci, 78.55.Cr, 78.55.Et Keywords: polariton

  6. Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells

    E-Print Network [OSTI]

    As, Donat Josef

    molecular beam epitaxy on free standing 3C-SiC 001 substrates. During growth of Al0.15Ga0.85N/GaN quantum growth of the quantum structures an 800 nm thick GaN buffer layer was deposited on the 3C-SiC substrate. The buffer and the c-AlGaN/GaN quantum wells were grown at a substrate temperature of 720 °C. The layers were

  7. Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

    SciTech Connect (OSTI)

    Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2005-12-19T23:59:59.000Z

    We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

  8. AlGaN/GaN HEMT With 300-GHz fmax

    E-Print Network [OSTI]

    Chung, Jinwook W.

    We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage ...

  9. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

    E-Print Network [OSTI]

    Piner, Edwin L.

    This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...

  10. High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

    E-Print Network [OSTI]

    Hartono, Haryono

    The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...

  11. Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

    E-Print Network [OSTI]

    Lu, Bin

    In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

  12. Investigation of Strain in AlGaN/GaN Multi Quantum Wells by Complementary Techniques

    SciTech Connect (OSTI)

    Devaraju, G.; Sathish, N.; Pathak, A. P. [School of Physics, University of Hyderabad, Central University (P.0), Hyderabad 500 046 (India); Dhamodaran, S. [Department of Physics, Indian Institute of Technology, IIT P O, Kanpur UP 208016 (India); Gaca, J.; Wojcik, M. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Turos, A. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Soltan Institute for Nuclear Studies, Swierk/Otwock, Warsaw (Poland); Arora, B. M. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

    2009-03-10T23:59:59.000Z

    Al{sub 0.49}Ga{sub 0.51}N(12 nm)/GaN (13 nm) Multi Quantum Wells of 15 periods are grown on sapphire by MOCVD technique. GaN/AlN, each of thickness 200 nm and 20 nm respectively, are used as buffer layers between substrate and epilayer to incorporate the strain in epilayers. It is a well established technique to engineer the band gap in Al{sub x}Ga{sub 1-x}N by adjusting alloy composition. These samples are used in visible and UV light emitters. In the present study, we employ a photoluminescence technique to estimate the composition and luminescence peak positions of AlGaN and GaN. Crystallinity and quality of interfaces have been studied by Rocking curve scan. The Threading Dislocations formed at the GaN buffer layer travel across the entire layers to the surface to form good quality films. Photo-luminescence results show a very sharp GaN peak at 3.4 eV, as observed and reported by others, which shows that samples are free from point defects.

  13. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Universitŕ di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  14. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  15. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02T23:59:59.000Z

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  16. Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian Kindel, Sven Rodt, Andr Strittmatter et al.

    E-Print Network [OSTI]

    Nabben, Reinhard

    Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hönig, Christian transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko,a Gerald Hönig, Christian Kindel, Sven

  17. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu et al.

    E-Print Network [OSTI]

    Gilchrist, James F.

    Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r- sapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple

  18. Quantum confinement in GaP nanoclusters

    SciTech Connect (OSTI)

    Laurich, B.K.; Smith, D.C.; Healy, M.D.

    1994-06-01T23:59:59.000Z

    We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

  19. U.S. LNG Imports from Equatorial Guinea

    Gasoline and Diesel Fuel Update (EIA)

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  20. U.S. LNG Imports from United Arab Emirates

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  1. U.S. LNG Imports from Oman

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  2. U.S. LNG Imports from Egypt

    Gasoline and Diesel Fuel Update (EIA)

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  3. U.S. LNG Imports from Other Countries

    Gasoline and Diesel Fuel Update (EIA)

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  4. U.S. LNG Imports from Malaysia

    Gasoline and Diesel Fuel Update (EIA)

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  5. U.S. LNG Imports from Indonesia

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  6. U.S. LNG Imports from Brunei

    Gasoline and Diesel Fuel Update (EIA)

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  7. U.S. LNG Imports from Peru

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  8. U.S. LNG Imports from Yemen

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  9. U.S. LNG Imports from Norway

    Gasoline and Diesel Fuel Update (EIA)

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  10. U.S. LNG Imports from Qatar

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  11. U.S. LNG Imports from Algeria

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  12. U.S. LNG Imports from Trinidad/Tobago

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  13. U.S. LNG Imports from Nigeria

    Gasoline and Diesel Fuel Update (EIA)

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  14. U.S. LNG Imports from Australia

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from...

  15. Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge/SiGe/Si substrates

    SciTech Connect (OSTI)

    Kwon, O.; Boeckl, J.; Lee, M.L.; Pitera, A.J.; Fitzgerald, E.A.; Ringel, S.A. [Department of Electrical Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Department of Electrical and Computer Engineering, Ohio State University, 2015 Neil Avenue, Columbus, Ohio 43210 (United States)

    2005-02-01T23:59:59.000Z

    Visible AlGaInP resonant cavity light emitting diodes (RCLEDs) were grown by molecular beam epitaxy and fabricated on low-dislocation density, SiGe/Si metamorphic substrates. A comparison with identical devices grown on GaAs and Ge substrates shows that not only did the RCLED device structure successfully transfer to the SiGe/Si substrate, but also a higher optical output power was obtained. This result is attributed to enhanced lateral current spreading by the low residual dislocation density ({approx}1x10{sup 6} cm{sup -2}) network within the virtual Ge substrate and the superior thermal conductivity of the underlying Si wafer. In addition, the growth of an AlGaAs current spreading layer and a modified top metal contact were incorporated in the RCLED on SiGe to optimize device performance. The measured electroluminescent output power was 166 {mu}W at a 665 nm peak wavelength under 500 mA current injection. Extremely narrow electroluminescence linewidths were achieved with a full width half maximum value of 3.63 nm under 50 mA current injection. These results demonstrate great promise for the monolithic integration of visible band optical sources with Si-based electronic circuitry.

  16. Hanford External Dosimetry Technical Basis Manual PNL-MA-842

    SciTech Connect (OSTI)

    Rathbone, Bruce A.

    2009-08-28T23:59:59.000Z

    The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNL’s Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNL’s Electronic Records & Information Capture Architecture (ERICA) database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document.

  17. UID-GaN doping1016 cm-3 2 m 5 m2 m

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    2 µm Drain Silicon UID-GaN ­ doping1016 cm-3 1.1 µm 2 µm GateSource 2 µm 5 µm2 µm AirAir Al0.25GaN ­ doping1015 cm-3 30 nm Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Drain Silicon UID-GaN GateSource AirAir AlxGaN Gate (a) (b) (c) Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Gate (d) P-GaN P-GaN 30

  18. www.math.tu-berlin.de/mathe-ini Di, 10.4. 11:30 MA 844 Frhstck

    E-Print Network [OSTI]

    Nabben, Reinhard

    www.math.tu-berlin.de/mathe-ini Di, 10.4. 11:30 MA 844 Frühstück Im Mathetreff gibt es gratis Kaffee und Brötchen für alle Erstsemester (Mathe, WiMa, TechMa). Studis, die im Café oder der Ini aktiv sind, beantworten deine Fragen. Do, 12.4. 18:00 MA 847 Erstes Iniplenum Die Ini trifft sich ungefähr

  19. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect (OSTI)

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

    2013-05-28T23:59:59.000Z

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  20. Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

    SciTech Connect (OSTI)

    Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

    2012-06-01T23:59:59.000Z

    Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

  1. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  2. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  3. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09T23:59:59.000Z

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  4. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    SciTech Connect (OSTI)

    Koblmueller, G. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany); Chu, R. M.; Raman, A.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

    2010-02-15T23:59:59.000Z

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  5. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01T23:59:59.000Z

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  6. PHYSICAL REVIEW B 85, 045319 (2012) Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

    E-Print Network [OSTI]

    Vuckovic, Jelena

    2012-01-01T23:59:59.000Z

    in materials systems, including InP/InGaP,6­9 InP/GaP,10,11 InP/AlGaInP,12,13 GaInP/GaP,14 InAs/GaP,15 and Al have been observed only in the InP/InGaP and InP/AlGaInP systems. GaP-based materials, by contrastP compared to InGaP is preferable for on-chip frequency downconversion to telecom wavelengths. Recently,17

  7. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

    2013-12-04T23:59:59.000Z

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  8. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

    SciTech Connect (OSTI)

    Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Gońi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

    2014-01-06T23:59:59.000Z

    The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

  9. Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

    SciTech Connect (OSTI)

    Kandaswamy, P. K.; Monroy, E. [CEA/CNRS group 'Nanophysique et semiconducteurs', INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Machhadani, H.; Sakr, S.; Tchernycheva, M.; Julien, F. H. [Photis, Institut d'Electronique Fondamentale, Universite Paris-Sud, 91405 Orsay Cedex (France); Bougerol, C. [CEA/CNRS group 'Nanophysique et semiconducteurs', Institut Neel, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2009-10-05T23:59:59.000Z

    We report on the observation of midinfrared intersubband absorption in Si-doped GaN/AlGaN superlattices grown by plasma-assisted molecular-beam epitaxy on semi-insulating GaN-on-Si(111) templates. TM-polarized absorption attributed to transition between the first two electronic levels in the quantum wells peaked in the range from 2 to 9 {mu}m. The relative spectral width remains around 20% in the whole midinfrared spectral range. Doping is predicted to have a large influence on the intersubband absorption energy due to screening of polarization-induced internal electric field.

  10. Hanford External Dosimetry Technical Basis Manual PNL-MA-842

    SciTech Connect (OSTI)

    Rathbone, Bruce A.

    2011-04-04T23:59:59.000Z

    The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at the U.S. Department of Energy (DOE) Hanford site. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with requirements of 10 CFR 835, the DOE Laboratory Accreditation Program, the DOE Richland Operations Office, DOE Office of River Protection, DOE Pacific Northwest Office of Science, and Hanford’s DOE contractors. The dosimetry system is operated by the Pacific Northwest National Laboratory (PNNL) Hanford External Dosimetry Program which provides dosimetry services to PNNL and all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNL’s Electronic Records & Information Capture Architecture database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2.

  11. Hanford External Dosimetry Technical Basis Manual PNL-MA-842

    SciTech Connect (OSTI)

    Rathbone, Bruce A.

    2010-04-01T23:59:59.000Z

    The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at the U.S. Department of Energy (DOE) Hanford site. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with requirements of 10 CFR 835, the DOE Laboratory Accreditation Program, the DOE Richland Operations Office, DOE Office of River Protection, DOE Pacific Northwest Office of Science, and Hanford’s DOE contractors. The dosimetry system is operated by the Pacific Northwest National Laboratory (PNNL) Hanford External Dosimetry Program which provides dosimetry services to PNNL and all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNL’s Electronic Records & Information Capture Architecture database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2.

  12. Hanford External Dosimetry Technical Basis Manual PNL-MA-842

    SciTech Connect (OSTI)

    Rathbone, Bruce A.

    2007-03-12T23:59:59.000Z

    The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNL’s Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. Rev. 0 marks the first revision to be released through PNNL’s Electronic Records & Information Capture Architecture (ERICA) database. Revision numbers that are whole numbers reflect major revisions typically involving changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Revision Log: Rev. 0 (2/25/2005) Major revision and expansion. Rev. 0.1 (3/12/2007) Minor revision. Updated Chapters 5, 6 and 9 to reflect change in default ring calibration factor used in HEDP dose calculation software. Factor changed from 1.5 to 2.0 beginning January 1, 2007. Pages on which changes were made are as follows: 5.23, 5.69, 5.78, 5.80, 5.82, 6.3, 6.5, 6.29, 9.2.

  13. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01T23:59:59.000Z

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  14. Degradation mechanisms of GaN high electron mobility transistors

    E-Print Network [OSTI]

    Joh, Jungwoo

    2007-01-01T23:59:59.000Z

    In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. ...

  15. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

    2014-08-20T23:59:59.000Z

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  16. TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen fur

    E-Print Network [OSTI]

    Schubart, Christoph

    TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen f¨ur optoelektronische Anwendungen . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 5.1.2 Versetzungen bei Homoapitaxie auf GaN-Substraten . . . . 79 5.2 Versetzungsreduktion durch

  17. GaN Nanopore Arrays: Fabrication and Characterization

    E-Print Network [OSTI]

    Wang, Yadong

    GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

  18. Desert Peak to Humboldt House and Winnemucca, in: Lane, M.A....

    Open Energy Info (EERE)

    and Winnemucca, in: Lane, M.A., (ed) Nevada geothermal areas: Desert Peak, Humboldt House, Beoware: Guidebook for field trip Jump to: navigation, search OpenEI Reference LibraryAdd...

  19. Ma34a Prob. y Proc. Estocasticos 25 de Abril, 2006 Lista de Distribuciones

    E-Print Network [OSTI]

    Rapaport, Iván

    Ma34a Prob. y Proc. Estocâ??asticos 25 de Abril, 2006 Lista de Distribuciones por Marcos Kiwi Modelos! # i e -# , si i # SX = N . Modelos absolutamente continuos: A continuaciâ??on se da la funciâ??on densidad

  20. The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD

    E-Print Network [OSTI]

    Richards-Kortum, Rebecca

    Introduction to Engineering Computation · STAT 310 Probability and Statistics · STAT 410 Introduction246 Statistics The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD Course engineering, computational and applied mathematics, managerial studies, mathematics, political science