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1

MA.+'  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545*. . : '*I_ - I _ _ _Text ThisTJ3:MA.+' t

2

Everett, MA Liquefied Natural Gas Total Imports (Million Cubic Feet)  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 633 6221,2372003of Energy for39 TableErrorsTotal

3

Everett, Washington: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision has beenFfe2fb55-352f-473b-a2dd-50ae8b27f0a6 NoSan Leandro,Law andEnergy InformationEvatranEverett,

4

ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY M.A. Contreras, 2  

E-Print Network [OSTI]

) photovoltaic technology is motivated primarily by the potential to enhance solar cell current generationZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY 1 M.A. Contreras, 2 T. Nakada, 2 M of 18.6% for Cu(In,Ga)Se2 solar cells that incorporate a ZnS(O,OH) buffer layer as an alternative to Cd

Sites, James R.

5

Phenomenology of "dark matter"- from the Everett's quantum cosmology  

E-Print Network [OSTI]

It is widely accepted that the Everett's (or "many-worlds") interpretation of quantum mechanics is the only one which is appropriate for quantum cosmology because no environment may exist for Universe as a whole. We discuss, in the framework of the Everett's interpretation, the (quasi-) classical stage of evolution of the Universe when there coexist "classically incompatible" configurations of matter, or classical alternative realities ("alternatives" for short). In the framework of the Everett's interpretation the semiclassical gravity (where the gravitational field is classical and the non-gravitational fields are quantum) is more natural than theories including quantizing gravitational field. It is shown that the semiclassical (at least on the astrophysical and cosmological scales) Everett-type gravity leads to the observational effect known as the effect of dark matter. Instead of assuming special forms of matter (weakly interacting with the known matter), the role of the dark matter is played in this case by the matter of the usual kind which however belongs to those alternative realities (Everett's worlds) which remain {\\guillemotleft}invisible{\\guillemotright}, i.e. not perceived with the help of non-gravitational fields.

M. B. Mensky

2011-05-21T23:59:59.000Z

6

MODELS FOR DIAGNOSING ROBOT ERROR SOURCES Louis J. Everett  

E-Print Network [OSTI]

of industrial robots and on some machine tools, calibration methods have significantly improved positionMODELS FOR DIAGNOSING ROBOT ERROR SOURCES Louis J. Everett Mechanical Engineering Texas A that the somewhat ad-hoc modelling methods used for robot calibration, although satisfactory for improving accu

Everett, Louis J.

7

MA 41600  

E-Print Network [OSTI]

MA 41600 164 - Textbook: Probability, Jim Pitman; MA 41600 165 - Textbook: A First Course in Probability, Sheldon M. Ross; MA 41600 165 - Textbook: ...

8

Price of Everett, MA Liquefied Natural Gas Total Imports (Dollars per  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per ThousandThousand Cubic Feet)

9

Price of Everett, MA Liquefied Natural Gas Total Imports (Dollars per  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per ThousandThousand Cubic

10

Price of Everett, MA Natural Gas LNG Imports from Algeria (Dollars per  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per ThousandThousand CubicThousand

11

Price of Everett, MA Natural Gas LNG Imports from Australia (Dollars per  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per ThousandThousand

12

Price of Everett, MA Natural Gas LNG Imports from Egypt (Nominal Dollars  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per ThousandThousandper Thousand

13

Price of Everett, MA Natural Gas LNG Imports from Trinidad and Tobago  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per ThousandThousandper

14

Price of Everett, MA Natural Gas LNG Imports from Trinidad and Tobago  

U.S. Energy Information Administration (EIA) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2007 10,998 9,933 10,998 10,643 10,998through 1996)DecadeYear(Dollars per ThousandThousandper(Dollars per

15

Everett, MA Liquefied Natural Gas Imports From Yemen (Million Cubic Feet)  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 633 6221,2372003of Energy for39 TableErrors

16

Everett, MA Natural Gas LNG Imports (Price) From Yemen (Dollars per  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 633 6221,2372003of Energy for39

17

Everett, MA Natural Gas LNG Imports (Price) From Yemen (Dollars per  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 633 6221,2372003of Energy for39Thousand Cubic

18

Everett, MA Natural Gas Liquefied Natural Gas Imports from Trinidad and  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 633 6221,2372003of Energy for39Thousand CubicTobago

19

MA 16100  

E-Print Network [OSTI]

MA 16100, Spring 2015. Plane Analytic Geometry And Calculus I. Course Info. Syllabus · Assignment Sheet · Emergency Prepardness · Daily Course Calendar

20

Everettian Rationality: defending Deutsch's approach to probability in the Everett interpretation  

E-Print Network [OSTI]

An analysis is made of Deutsch's recent claim to have derived the Born rule from decision-theoretic assumptions. It is argued that Deutsch's proof must be understood in the explicit context of the Everett interpretation, and that in this context, it essentially succeeds. Some comments are made about the criticism of Deutsch's proof by Barnum, Caves, Finkelstein, Fuchs, and Schack; it is argued that the flaw which they point out in the proof does not apply if the Everett interpretation is assumed. A longer version of this paper, entitled "Quantum Probability and Decision Theory, Revisted", is also available online.

David Wallace

2003-03-10T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Metal-insulator-semiconductor structure on low-temperature grown GaAs M. Young, W. Li, and T. P. Ma  

E-Print Network [OSTI]

Metal-insulator-semiconductor structure on low-temperature grown GaAs A. Chen,a M. Young, W. Li Received 28 July 2006; accepted 30 October 2006; published online 7 December 2006 The metal-insulator dielectrics and metal-insulator-semiconductor MIS structures; for ex- ample, in situ deposited Ga2O3 Gd2O3

Woodall, Jerry M.

22

A NEW ROBOT DESIGN TO PASSIVELY DAMP FLEXIBLE ROBOTIC ARMS Louis J. Everett  

E-Print Network [OSTI]

applications as well as the Department of Energy's Environmental Waste Management projects. Most of the robotsA NEW ROBOT DESIGN TO PASSIVELY DAMP FLEXIBLE ROBOTIC ARMS Louis J. Everett Mechanical and Industrial Engineering University of Texas El Paso USA Marc Compere Mechanical Engineering Department

Everett, Louis J.

23

MA 26100  

E-Print Network [OSTI]

Differential calculus of several variables; multiple integrals. Introduction to vector calculus. Not open to students with credit in MA 174 or 271. Typically offered ...

24

MA 15400  

E-Print Network [OSTI]

These video lessons are presented by Tim Delworth, the coordinator of MA 15400. Quick Reference Guide to Campus Emergencies; Tutoring; POET (Pursuit of ...

25

MA 450  

E-Print Network [OSTI]

Course Description. Credit Hours: 3.00. This course, which is essentially the first half of MA 55300, is recommended for students wanting a more substantial ...

26

MA 30300  

E-Print Network [OSTI]

Course Description. Credit Hours: 3.00. This is a methods course for juniors in any branch of engineering and science, designed to follow MA 262.

27

MA 36200  

E-Print Network [OSTI]

MA 36200, Spring 2015. Topics In Vector Calculus ... ADA policies: please see our ADA Information page for more details. In the event of a missed exam, see ...

28

Tammy Ma  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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29

Materials for MA 182.  

E-Print Network [OSTI]

Materials for MA 182. INSTRUCTOR: Richard Penney. Office: MATH 822: Telephone: 494-1968: e-mail: rcp@math.purdue.edu: Office Hours: Mon, Tu, Fri,

30

MA 22400 -- CALCULATOR POLICY  

E-Print Network [OSTI]

MA 22400 -- CALCULATOR POLICY. A ONE-LINE scientific calculator is REQUIRED. No other calculator is allowed. RECOMMENDED: TI-30Xa calculator

OwenDavis

2014-08-22T23:59:59.000Z

31

MA 152 Exam 1 Memo  

E-Print Network [OSTI]

that evening on the MA 15910 web page (www.math.purdue.edu/MA15910). 3) The exam is self-explanatory. No questions will be allowed unless a student ...

math

2015-01-21T23:59:59.000Z

32

MaRIE Presentations  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas Conchas recovery challenge fund Las ConchasTrail ofDensityTraining RadiationMaRIE

33

MA 23100 and MA 23200 - FINAL EXAM INFORMATION Fall 2009 ...  

E-Print Network [OSTI]

MSEE = Materials and Electrical Engineering. You may refer to the campus map for their locations. For MA 23100, there's a link (“Seating Arrangement”) in the ...

2009-12-15T23:59:59.000Z

34

Taught degrees MA in Creative Media Practice  

E-Print Network [OSTI]

informed creative practice across digital media, photography and a range of aural and visual forms.maddox@sussex.ac.uk www.sussex.ac.uk/mfm Essentials Taught degrees MA in Creative Media Practice MA in Digital Documentary MA in Digital Media MA in Gender and Media MA in Media and Cultural Studies MA in Media Practice

Sussex, University of

35

The ma Ni Song 2  

E-Print Network [OSTI]

ba sgrol ma Date of recording November 10th 2009. Place of recording Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Name(s), age, sex, place of birth of performer(s) Bo... nyed. Female. Born 1954. and Song rgyas dbar sgron. Female. Born 1992 Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Language of recording Khams Tibetan Performer(s)’s first...

Zla ba sgrol ma

2009-11-10T23:59:59.000Z

36

The ma Ni Song 1  

E-Print Network [OSTI]

ba sgrol ma Date of recording November 10th 2009. Place of recording Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Name(s), age, sex, place of birth of performer(s) Bo... nyed. Female. Born 1954. Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Language of recording Khams Tibetan Performer(s)’s first / native language Khams Tibetan Performer...

Zla ba sgrol ma

2009-11-10T23:59:59.000Z

37

The ma Ni Song 5  

E-Print Network [OSTI]

ba sgrol ma Date of recording November 10th 2009. Place of recording Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Name(s), age, sex, place of birth of performer(s) Chos... tdog. Female. Born 1984. Song rgyas dpar sgron. Female. Born 1992. Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Language of recording Khams Tibetan Performer(s)’s first...

Zla ba sgrol ma

2009-11-10T23:59:59.000Z

38

The ma Ni Song 3  

E-Print Network [OSTI]

ba sgrol ma Date of recording November 10th 2009. Place of recording Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Name(s), age, sex, place of birth of performer(s) Bo... nyed. Female. Born 1954 and Song rgyas dbar sgron. Female. Born 1992. Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Language of recording Khams Tibetan Performer(s)’s first...

Zla ba sgrol ma

2009-11-10T23:59:59.000Z

39

WIND DATA REPORT FALMOUTH, MA  

E-Print Network [OSTI]

WIND DATA REPORT FALMOUTH, MA June1, 2004 to August 31, 2004. Prepared for Massachusetts Technology...................................................................................................................... 8 Wind Speed Time Series............................................................................................................. 8 Wind Speed Distributions

Massachusetts at Amherst, University of

40

MA 153 Schedule, Fall 2001  

E-Print Network [OSTI]

For supplemental videos and PowerPoint presentations to go along with these lessons, visit the course website at www.math.purdue.edu/ma153.

math

2012-08-16T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Discovery and utilization of sorghum genes (Ma5/Ma6)  

DOE Patents [OSTI]

Methods and composition for the production of non-flowering or late flowering sorghum hybrid. For example, in certain aspects methods for use of molecular markers that constitute the Ma5/Ma6 pathway to modulate photoperiod sensitivity are described. The invention allows the production of plants having improved productivity and biomass generation.

Mullet, John E; Rooney, William L; Klein, Patricia E; Morishige, Daryl; Murphy, Rebecca; Brady, Jeff A

2012-11-13T23:59:59.000Z

42

Taught degree MA in Philosophy  

E-Print Network [OSTI]

Philosophy Taught degree MA in Philosophy 1 year full time/2 years part time This MA offers an advanced general grounding in philosophy, which forms a good basis for further research. It includes modules in both the analytic and continental traditions of philosophy, reflecting the wide range

Sussex, University of

43

MA Org Chart, January 15, 2015  

Energy Savers [EERE]

MA-66 MA-60 Paul Bosco, Director Pat Ferraro, Deputy Director Jay Glascock, Senior Advisor MA-80 Office of the Ombudsman Rita R. Franklin, Director Cathy Barchi, Dep. Director...

44

MA 16100 Ground Rules & Grading Policy  

E-Print Network [OSTI]

Course Syllabus - MA 16100, Spring 2015. Course Web Page: Check this page www.math.purdue.edu/MA161 (Click here). There is also a detailed Daily ...

2015-01-04T23:59:59.000Z

45

MA 15400 ONLINE Fall 2014 Syllabus  

E-Print Network [OSTI]

MA 15400 ONLINE Fall 2014 Syllabus. TEXTBOOK. COURSE WEBSITE. RECORDED LESSONS. HOMEWORK. QUIZZES. EXAMS. CALCULATORS. OFFICE ...

Delworth, Timothy J

2014-09-14T23:59:59.000Z

46

MA 15400 ONLINE Spring 2015 Syllabus  

E-Print Network [OSTI]

MA 15400 ONLINE Spring 2015 Syllabus. TEXTBOOK. COURSE WEBSITE. RECORDED LESSONS. HOMEWORK. QUIZZES. EXAMS. CALCULATORS.

Delworth, Timothy J

2015-01-06T23:59:59.000Z

47

Boston, Massachusetts Location: Boston, MA  

E-Print Network [OSTI]

-recovery ventilation and water-source heat pumps Each unit has fresh air ducted independently. Each residence is warmed by a heat pump that taps the Trigen Energy Corporation steam lines that run underneath the street. #12;WallsBoston, Massachusetts #12;Location: Boston, MA Building type(s): Multi-unit residential, Retail 350

Prevedouros, Panos D.

48

WIND DATA REPORT Nantucket, MA  

E-Print Network [OSTI]

. Rogers Anthony F. Ellis July 12, 2006 Report template version 1.3 Renewable Energy Research Laboratory Research Laboratory (RERL) at the University of Massachusetts, Amherst in the course of performing work 12, 2006 Renewable Energy Research Laboratory Page 1 University of Massachusetts, Amherst Amherst, MA

Massachusetts at Amherst, University of

49

WIND DATA REPORT Wellfleet, MA  

E-Print Network [OSTI]

by the Renewable Energy Research Laboratory (RERL) at the University of Massachusetts, Amherst in the course, 2007 Renewable Energy Research Laboratory Page 1 University of Massachusetts, Amherst Amherst, MA 01003. Manwell Anthony L. Rogers Anthony F. Ellis May 2, 2007 Report template version 3.0 Renewable Energy

Massachusetts at Amherst, University of

50

WIND DATA REPORT Nantucket, MA  

E-Print Network [OSTI]

by the Renewable Energy Research Laboratory (RERL) at the University of Massachusetts, Amherst in the course L. Rogers Anthony F. Ellis March 30, 2006 Report template version 1.3 Renewable Energy Research Laboratory University of Massachusetts, Amherst 160 Governors Drive, Amherst, MA 01003 www

Massachusetts at Amherst, University of

51

Taught degrees MA in Literature and Philosophy  

E-Print Network [OSTI]

Philosophy Taught degrees MA in Literature and Philosophy 1 year full time/2 years part time This degree is taught jointly by Philosophy and English faculty. Refer to page 87 for details. MA in Philosophy 1 year full time/2 years part time This MA offers an advanced general grounding in philosophy

Sussex, University of

52

Data Update for Paxton, MA December, 2006  

E-Print Network [OSTI]

Data Update for Paxton, MA December, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for December, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

53

Data Update for Paxton, MA November, 2006  

E-Print Network [OSTI]

Data Update for Paxton, MA November, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for November, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

54

Data Update for Paxton, MA February, 2005  

E-Print Network [OSTI]

Data Update for Paxton, MA February, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for February, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

55

Data Update for Paxton, MA January, 2006  

E-Print Network [OSTI]

Data Update for Paxton, MA January, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for January, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

56

Data Update for Paxton, MA Prepared for  

E-Print Network [OSTI]

Data Update for Paxton, MA May, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for May, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

57

Data Update for Paxton, MA September, 2006  

E-Print Network [OSTI]

Data Update for Paxton, MA September, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for September, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

58

Data Update for Paxton, MA October, 2004  

E-Print Network [OSTI]

Data Update for Paxton, MA October, 2004 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for October, 2004 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

59

Data Update for Paxton, MA Prepared for  

E-Print Network [OSTI]

Data Update for Paxton, MA June, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for June, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

60

Data Update for Paxton, MA April, 2005  

E-Print Network [OSTI]

Data Update for Paxton, MA April, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for April, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Data Update for Paxton, MA October, 2005  

E-Print Network [OSTI]

Data Update for Paxton, MA October, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for October, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

62

Data Update for Paxton, MA August, 2005  

E-Print Network [OSTI]

Data Update for Paxton, MA August, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for August, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

63

Data Update for Paxton, MA September, 2005  

E-Print Network [OSTI]

Data Update for Paxton, MA September, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for September, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

64

Data Update for Paxton, MA April, 2006  

E-Print Network [OSTI]

Data Update for Paxton, MA April, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for April, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

65

Data Update for Paxton, MA October, 2006  

E-Print Network [OSTI]

Data Update for Paxton, MA October, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for October, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

66

Data Update for Paxton, MA Prepared for  

E-Print Network [OSTI]

Data Update for Paxton, MA May, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for May, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

67

Data Update for Paxton, MA November, 2004  

E-Print Network [OSTI]

Data Update for Paxton, MA November, 2004 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for November, 2004 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

68

Data Update for Paxton, MA February, 2006  

E-Print Network [OSTI]

Data Update for Paxton, MA February, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for February, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

69

Data Update for Blandford, MA October 2006  

E-Print Network [OSTI]

Data Update for Blandford, MA October 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Matthew Lackner Monthly Data Summary for October 2006 This update summarizes the monthly data results for the Blandford monitoring site in Blandford, MA, at 42.223° N, 72

Massachusetts at Amherst, University of

70

Data Update for Paxton, MA March, 2006  

E-Print Network [OSTI]

Data Update for Paxton, MA March, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for March, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

71

Data Update for Paxton, MA August, 2006  

E-Print Network [OSTI]

Data Update for Paxton, MA August, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for August, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

72

Data Update for Paxton, MA December, 2005  

E-Print Network [OSTI]

Data Update for Paxton, MA December, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for December, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

73

Data Update for Paxton, MA March, 2005  

E-Print Network [OSTI]

Data Update for Paxton, MA March, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for March, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

74

Data Update for Blandford, MA November 2006  

E-Print Network [OSTI]

Data Update for Blandford, MA November 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Matthew Lackner Monthly Data Summary for November 2006 This update summarizes the monthly data results for the Blandford monitoring site in Blandford, MA, at 42.223° N, 72

Massachusetts at Amherst, University of

75

Data Update for Paxton, MA Prepared for  

E-Print Network [OSTI]

Data Update for Paxton, MA July, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for July, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

76

Data Update for Paxton, MA Prepared for  

E-Print Network [OSTI]

Data Update for Paxton, MA June, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for June, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

77

Data Update for Paxton, MA September, 2004  

E-Print Network [OSTI]

Data Update for Paxton, MA September, 2004 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for September, 2004 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

78

Data Update for Paxton, MA Prepared for  

E-Print Network [OSTI]

Data Update for Paxton, MA July, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for July, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

79

Data Update for Paxton, MA January, 2005  

E-Print Network [OSTI]

Data Update for Paxton, MA January, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for January, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

80

Data Update for Paxton, MA November, 2005  

E-Print Network [OSTI]

Data Update for Paxton, MA November, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for November, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Data Update for Paxton, MA December, 2004  

E-Print Network [OSTI]

Data Update for Paxton, MA December, 2004 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for December, 2004 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

82

US NE MA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S. NaturalA. Michael SchaalNovember 26,8,CoalThousandIL SiteMidAtl PANE MA Site

83

MA transmutation performance in the optimized MYRRHA  

SciTech Connect (OSTI)

MYRRHA (multi-purpose hybrid research reactor for high-tech applications) is a multipurpose research facility currently being developed at SCK-CEN. It will be able to work in both critical and subcritical modes and, cooled by lead-bismuth eutectic. In this paper the minor actinides (MA) transmutation capabilities of MYRRHA are investigated. (Pu + Am, U) MOX fuel and (Np + Am + Cm, Pu) Inert Matrix Fuel test samples have been loaded in the central channel of the MYRRHA critical core and have been irradiated during five cycles, each one consisting of 90 days of operation at 100 MWth and 30 days of shutdown. The reactivity worth of the test fuel assembly was about 1.1 dollar. A wide range of burn-up level has been achieved, extending from 42 to 110 MWd/kg HM, the samples with lower MA-to-Pu ratios reaching the highest burn-up. This study has highlighted the importance of the initial MA content, expressed in terms of MA/Pu ratio, on the transmutation rate of MA elements. For (Pu + Am, U) MOX fuel samples, a net build-up of MA is observed when the initial content of MA is very low (here, 1.77 wt% MA/Pu) while a net decrease in MA is observed in the sample with an initial content of 5 wt%. This suggests the existence of some 'equilibrium' initial MA content value beyond which a net transmutation is achievable.

Malambu, E.; Van den Eynde, G.; Fernandez, R.; Baeten, P.; Ait Abderrahim, H. [SCK-CEN, Boeretang 200, BE-2400 Mol (Belgium)

2013-07-01T23:59:59.000Z

84

M.A. POLITICAL SCIENCE Application Checklist  

E-Print Network [OSTI]

M.A. POLITICAL SCIENCE Application Checklist IMPORTANT NOTES 1. Please submit all Application below. 6. Applicants to the M.A. Political Science Program normally should have a four-year baccalaureate degree in Political Science. UNBC and the Political Science Program are committed

Northern British Columbia, University of

85

MA 16020 SI slide.pptx  

E-Print Network [OSTI]

SI Study Sessions for MA 16020 -? Spring 2015. Mondays. 4:30 – 5:20 KRCH 464. Tuesdays. 5:30 – 6:20 RHPH 162. Thursdays. 4:30 – 5:20 ARMS 1103.

OwenDavis

2015-01-12T23:59:59.000Z

86

MA 266 Review Topics - Exam # 2  

E-Print Network [OSTI]

Page 1. Spring 2012. MA 266. Review Topics - Exam # 2 ..... and using a table of Laplace transforms (see table on page 317) and using linearity : L{f(t) + g(t)} ...

2012-03-05T23:59:59.000Z

87

MA 266 Review Topics - Exam # 1  

E-Print Network [OSTI]

Page 1. Spring 2012. MA 266. Review Topics - Exam # 1. (1) Special Types of First Order Equations. I. First Order Linear Equation (FOL): dy dt. + p(t)y = g(t).

2012-01-25T23:59:59.000Z

88

MA 266 Review Topics - Exam # 2 (updated)  

E-Print Network [OSTI]

Page 1. Spring 2012. MA 266. Review Topics - Exam # 2 (updated) ..... and using a table of Laplace transforms (see table on page 317) and using linearity : L{f(t) ...

2012-04-23T23:59:59.000Z

89

SAMPLE Plan of Study for Mathematics Education (MAED)  

E-Print Network [OSTI]

Hours. Semester 1. Course. MA 16100, 16500. ENGL 10600/10800 Language 101002. MA 10800 Free. Title. Calculus I. Freshman Comp. Intro Math. Hours. 4-

Cara

2013-03-20T23:59:59.000Z

90

Fabrication technology for ODS Alloy MA957  

SciTech Connect (OSTI)

A successful fabrication schedule has been developed at Carpenter Technology Corporation for the production of MA957 fuel and blanket cladding. Difficulties with gun drilling, plug drawing and recrystallization were overcome to produce a pilot lot of tubing. This report documents the fabrication efforts of two qualified vendors and the support studies performed at WHC to develop the fabrication-schedule.

ML Hamilton; DS Gelles; RJ Lobsinger; MM Paxton; WF Brown

2000-03-16T23:59:59.000Z

91

RIVIER COLLEGE MA/CS Department  

E-Print Network [OSTI]

, Code (in Appendix), test results, table of contents, and other project related materials. Good luckRIVIER COLLEGE MA/CS Department CS552: Software Design Strategy TEAM PROJECT REQUIREMENTS to the team project: The project should include: = Title of the project; = One-page Executive Summary

Riabov, Vladimir V.

92

Stability in MaVaN Models  

E-Print Network [OSTI]

Mass-varying neutrino (MaVaN) models propose a source of dark energy in a new scalar field called the acceleron. Recent work has shown that nonrelativistic neutrino fields in these theories are unstable to inhomogeneous fluctuations, and form structures that no longer behave as dark energy. One might expect that in multiple-neutrino models, the lighter species could continue to act as a source for the acceleron, generating dark energy without the help of heavier species. This paper shows that by considering the evolution of the acceleron field for a large class of models, the result of any neutrino component becoming unstable is that all components become unstable within a short time on cosmological scales. An alternate model employing a second scalar field in a hybrid potential is shown to have stable MaVaN dark energy even in the presence of unstable heavier components.

Christopher Spitzer

2006-06-26T23:59:59.000Z

93

InThrMa | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio:GreerHiCalifornia:ISIIrrigationDesert Peak AreaInformationInThrMa

94

^ ^ Cambridge Technology, Inc. -= 109 Smith Place, Cambridge, MA 02138  

E-Print Network [OSTI]

^ ^ Cambridge Technology, Inc. - = 109 Smith Place, Cambridge, MA 02138 Tel: 617-441-0600 Fax: 617. = 109 Smith Place, Cannbridge, MA 02138 Tel. 617-441-0600 Fax 617-497-8800 Cambridge Technology's line

Kleinfeld, David

95

Supplementary Figure 1 SHAPE-MaP data analysis pipeline.  

E-Print Network [OSTI]

Supplementary Figure 1 SHAPE-MaP data analysis pipeline. Outline of software pipeline that fully.1 GHz Intel Core i7 and 16 GB RAM). This strategy is implemented in the SHAPE-MaP Folding Pipeline

Cai, Long

96

Ga nanoparticle-enhanced photoluminescence of GaAs  

SciTech Connect (OSTI)

We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-09-02T23:59:59.000Z

97

Economics & Finance MA or BSc (Single Honours Degrees)  

E-Print Network [OSTI]

88 Economics & Finance MA or BSc (Single Honours Degrees) Applied Economics Economics Financial Economics BA (International Honours Degrees) Economics See page 13 MA or BSc (Joint Honours Degrees) Economics and one of: Management Mathematics MA (Joint Honours Degrees) Economics and one of: Ancient

Brierley, Andrew

98

CSC 1051 M.A. Papalaskari, Villanova University Conditional Statements  

E-Print Network [OSTI]

CSC 1051 M.A. Papalaskari, Villanova University Conditional Statements Dr. Mary-Angela Papalaskari); } CSC 1051 M.A. Papalaskari, Villanova University A boolean expression Review if true, do this if more statement 1 true false statement2 CSC 1051 M.A. Papalaskari, Villanova University condition evaluated

Papalaskari, Mary-Angela

99

Data Update for Mt. Tom, Holyoke, MA August 2006  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA August 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for August 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

100

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA June 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for June 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

Massachusetts at Amherst, University of

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Data Update for Mt. Tom, Holyoke, MA January 2006  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA January 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for December 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

102

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA May 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for May 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

103

Data Update for Mt. Tom, Holyoke, MA October 2006  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA October 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for October 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

104

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA July 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for July 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

105

Data Update for Mt. Tom, Holyoke, MA December 2005  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA December 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for December 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

106

Data Update for Mt. Tom, Holyoke, MA October 2005  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA October 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for October 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

107

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA July 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for July 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

108

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA July 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for July 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

Massachusetts at Amherst, University of

109

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA March 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for March 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

110

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA May 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for May 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

Massachusetts at Amherst, University of

111

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA April 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for April 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

112

Data Update for Mt. Tom, Holyoke, MA October 2007  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA October 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for October 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

113

Data Update for Mt. Tom, Holyoke, MA November 2005  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA November 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for November 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

114

Data Update for Mt. Tom, Holyoke, MA January 2008  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA January 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for January 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

115

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA June 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for June 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

116

Data Update for Mt. Tom, Holyoke, MA January 2007  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA January 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for January 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

117

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA April 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for April 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

118

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA March 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for March 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

119

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA June 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for June 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

120

Data Update for Mt. Tom, Holyoke, MA November 2006  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA November 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for November 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Data Update for Mt. Tom, Holyoke, MA February 2007  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA February 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for February 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

122

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA April 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for April 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

Massachusetts at Amherst, University of

123

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA March 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for March 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

Massachusetts at Amherst, University of

124

Data Update for Mt. Tom, Holyoke, MA August 2005  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA August 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for August 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

125

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA May 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for May 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

126

Data Update for Mt. Tom, Holyoke, MA August 2007  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA August 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for August 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

127

Data Update for Mt. Tom, Holyoke, MA February 2006  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA February 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for February 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

128

Data Update for Mt. Tom, Holyoke, MA February 2008  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA February 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for February 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

129

Data Update for Mt. Tom, Holyoke, MA November 2007  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA November 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for November 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

130

Data Update for Mt. Tom, Holyoke, MA September 2007  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA September 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for September 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

131

Data Update for Mt. Tom, Holyoke, MA September 2006  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA September 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for September 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

132

Data Update for Mt. Tom, Holyoke, MA September 2005  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA September 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for September 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

133

AlGaN/GaN-based power semiconductor switches  

E-Print Network [OSTI]

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

134

DOE/MA-0517 | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in Review: TopEnergy DOE Theory9-9260-2003October 02,(July 2013) | DepartmentDOE/MA-0517

135

UCRL-MA-110662 PT I U  

Office of Scientific and Technical Information (OSTI)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation InInformation In closing, an National Carbon Capture Center at ,iMA-110662 PT I U b EQ3/6,

136

DOE_MA0518 December 2000  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGYWomentheATLANTA, GA - U.S. DepartmenttoJune 16,AprilFrank G. Klotz Under Secretary. S

137

Corrosion of MA754 and MA956 in a Commercial Aluminum Melter  

SciTech Connect (OSTI)

The University of North Dakota Energy & Environmental Research Center is working with Oak Ridge National Laboratory to test two oxide dispersion-strengthened alloys that could be used to construct very high-temperature heat recuperators for the aluminum-melting industry. For the initial tests, uncooled rings of MA754 and MA956 piping were exposed for 5 months to gases leaving an aluminum melter furnace at 1200 1290 C. The MA956 suffered spotty areas of severe corrosion and lost 25% of its weight. Scanning electron microscopy showed that there were small spots of alkali-rich corrosion products on the alloy surfaces, indicating the impact of droplets of fluxing agents. The corrosion products in these areas were mixed Fe, Cr, and Al oxides, which were depleted in Cr near the gas surface. However, Al concentrations in the remaining metal were typically between 3.5% and 4.0%, so there was a sufficient reservoir of Al remaining in the alloy to prevent simple breakaway corrosion which could have occurred if the Al were significantly depleted. The MA754 lost approximately 15% of its weight and showed void formation within 2 mm of the gas metal surfaces. Within the porous area, the Cr had largely segregated into oxide precipitates up to 50 9m in diameter, leaving the remaining metal Ni-rich. Below the porous layer, the alloy composition was relatively unchanged. Remains of Na- and Al-rich particles that had impacted the surface sporadically were visible but had not obviously affected the surface scale as they had with the MA956.

Hurley, John P. [University of North Dakota Energy & Environmental Research Center] [University of North Dakota Energy & Environmental Research Center; Kelley, Carl [Nature’s Fuel, 410 East Cook Road, Fort Wayne, IN 46825, USA] [Nature’s Fuel, 410 East Cook Road, Fort Wayne, IN 46825, USA; Bornstein, Norman S. [Consultant] [Consultant; Wright, Ian G [ORNL] [ORNL

2008-01-01T23:59:59.000Z

138

The 300 mA SRF ERL  

SciTech Connect (OSTI)

Energy Recovery Linacs (ERL) are important for a variety of applications, from high-power Free-Electron Lasers (FEL) to polarized-electron polarized-proton colliders. The ERL current is arguably the most important characteristic of ERLs for such applications. With that in mind, the Collider-Accelerator Department at Brookhaven National Laboratory embarked on the development of a 300 mA ERL to serve as an R and D test-bed for high-current ERL technologies. These include high-current, extremely well damped superconducting accelerating cavities, high-current superconducting laser-photocathode electron guns and high quantum-efficiency photocathodes. In this presentation I will cover these ERL related developments.

Ben-Zvi, Ilan [Collider-Accelerator Department Brookhaven National Laboratory Upton NY 11973 (United States)

2013-11-07T23:59:59.000Z

139

Radiation Protection Instrument Manual, Revision 1, PNL-MA-562  

SciTech Connect (OSTI)

PNL-MA-562 This manual provides specific information for operating and using portable radiological monitoring instruments available for use on the Hanford Site.

Johnson, Michelle Lynn

2009-09-23T23:59:59.000Z

140

oe oe oe oe oe Mi ye ma lel gvu  

E-Print Network [OSTI]

& & V ? c c c c Soprano Alto Tenor Bass q»¡¶ oe oe oe oe oe Mi ye ma lel gvu oe oe oe oe oe rot yis ra el o oe oe oe oe oe Mi ye ma lel o tan mi tan mi oe oe oe oe oe Mi ye ma lel o yim ne? yim ne tan mi oe oe oe oe oe Mi ye ma lel gvu w ah oe oe oe oe oe Hen be chol dor ya yim ne w rot

Setiawan, Hendra

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

RECIPIENT:Hull Municipal Light Plant STATE: MA PROJECT TITLE...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

:: Page 1 01 :L RECIPIENT:Hull Municipal Light Plant STATE: MA PROJECT TITLE: Hull Offshore Wind Research and Development Funding Opportunity Announcement Number Procurement...

142

MA 16020 – EXAM FORMULAS THE SECOND DERIVATIVE TEST ...  

E-Print Network [OSTI]

MA 16020 – EXAM FORMULAS. THE SECOND DERIVATIVE TEST. Suppose f is a function of two variables x and y, and that all the second-order partial ...

2014-08-12T23:59:59.000Z

143

Advice for succeeding in the MA 15300Y  

E-Print Network [OSTI]

Advice for succeeding in MA 15300Y. 1. Spend time every day working on the course (watching videos, reviewing PowerPoints, doing homework, completing ...

Devlin, Patrick M

2015-01-01T23:59:59.000Z

144

Course Materials • ALWAYS check the MA 15300 website FIRST ...  

E-Print Network [OSTI]

policies and understand all the course materials on the website. • ALWAYS check the MA 15300 · website FIRST when searching for class information.

Devlin, Patrick M

2015-01-03T23:59:59.000Z

145

Investigation of the GaN-on-GaAs interface for vertical power device applications  

SciTech Connect (OSTI)

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07T23:59:59.000Z

146

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

147

FRACTIONAL SKEW MONOID RINGS P. ARA, M.A. GONZ  

E-Print Network [OSTI]

FRACTIONAL SKEW MONOID RINGS P. ARA, M.A. GONZ â?? ALEZ­BARROSO, K.R. GOODEARL, AND E. PARDO FQM­298 of the Junta de Andalucâ??�a. 1 #12; 2 P. ARA, M.A. GONZ â?? ALEZ­BARROSO, K.R. GOODEARL, AND E

Bigelow, Stephen

148

MA and Ph.D. in Applied Anthropology GRADUATE INTERNSHIP  

E-Print Network [OSTI]

MA and Ph.D. in Applied Anthropology GRADUATE INTERNSHIP Description Students enrolled in the MA or Ph.D. in Applied Anthropology programs must complete a graduate internship with approved professional-supervision. The purpose of this internship is to give students practical training with the guidance of an internship

Escher, Christine

149

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets  

SciTech Connect (OSTI)

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

2013-08-19T23:59:59.000Z

150

Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes  

SciTech Connect (OSTI)

We investigated the influence of the built-in piezoelectric field induced by compressive stress on the characteristics of GaN-based 450-nm light-emitting diodes (LEDs) prepared on sapphire substrates of different thicknesses. As the sapphire substrate thickness was reduced, the compressive stress in the GaN layer was released, resulting in wafer bowing. The wafer bowing-induced mechanical stress altered the piezoelectric field, which in turn reduced the quantum confined Stark effect in the InGaN/GaN active region of the LED. The flat-band voltage was estimated by measuring the applied bias voltage that induced a 180° phase shift in the electro-reflectance (ER) spectrum. The piezoelectric field estimated by the ER spectra changed by ?110?kV/cm. The electroluminescence spectral peak wavelength was blue-shifted, and the internal quantum efficiency was improved by about 22% at a high injection current of 100?mA. The LED on the 60-?m-thick sapphire substrate exhibited the highest light output power of ?59?mW at an injection current of 100?mA, with the operating voltage unchanged.

Tawfik, Wael Z. [Department of Materials Science and Engineering, Chonnam National University, Yongbong 300 Gwangju 500-757 (Korea, Republic of); Department of Physics, Faculty of Science, Beni-Suef University, Beni-Suef 62511 (Egypt); Hyeon, Gil Yong; Lee, June Key, E-mail: junekey@chonnam.ac.kr [Department of Materials Science and Engineering, Chonnam National University, Yongbong 300 Gwangju 500-757 (Korea, Republic of)

2014-10-28T23:59:59.000Z

151

Universit Paris Descartes -UFR STAPS -Planning 2013-2014 (proposition 1B2) Arts Thrapies D 1 Ma 1 V 1 D 1 Me 1 S 1 S 1 Ma 1 J 1 D 1 Ma 1  

E-Print Network [OSTI]

Université Paris Descartes - UFR STAPS - Planning 2013-2014 (proposition 1B2) Arts Thérapies D 1 Ma 1 V 1 D 1 Me 1 S 1 S 1 Ma 1 J 1 D 1 Ma 1 L 2 Me 2 S 2 L 2 J 2 D 2 D 2 Me 2 V 2 L 2 Me 2 Ma 3 J 3 D 3 Ma 3 V 3 L 3 L 3 J 3 S 3 Ma 3 J 3 Me 4 V 4 L 4 Me 4 S 4 Ma 4 Ma 4 V 4 D 4 Me 4 V 4 J 5 S 5 Ma 5 J 5 D

Pellier, Damien

152

Syllabus for MA 16100 IMPACT, Fall 2014 Description: Many ...  

E-Print Network [OSTI]

Syllabus for MA 16100 IMPACT, Fall 2014. Description: Many students find that large lectures are not the best way for them to learn. IMPACT is a university-wide

2014-08-25T23:59:59.000Z

153

M.A. TESOL PROGRAM GRADUATE Michigan State University  

E-Print Network [OSTI]

M.A. TESOL PROGRAM GRADUATE HANDBOOK Michigan State University Department of Linguistics & Germanic................................................................. 18 VIII. Michigan State University Resources................................................................................................................................... 26 8/15/2014 2 #12;I. Program Overview Administered through the Michigan State University Department

154

Study Guide for Introductory Analysis II, MA 16021  

E-Print Network [OSTI]

The current text used for MA16021 as well as the course web page are listed ... Topic. 1-3. Integration by substituion and integration by parts. 4-5. Integration of ...

2014-08-12T23:59:59.000Z

155

Study Guide for Calculus for Technology II, MA 16020  

E-Print Network [OSTI]

The current text used for MA16020 as well as the course web page are listed ... of the text comes from the book listed below, which contains most of the topics.

2014-08-14T23:59:59.000Z

156

MA 125-4 CR PH 105-4 CR  

E-Print Network [OSTI]

490-3 CR Mechanical Engineering Design I I Proj Lab Proj Lab MA 125-4 CR Calculus I or Equivalent M MEMA 125-4 CR Calculus I or Equivalent PH 105-4 CR Gen Physics with Calculus MA 126-4 CR Calculus I I or Equivalent M Required Course Elective Course Prerequisite NS M W LAB Proj Lab Natural Science Mathematics

Carver, Jeffrey C.

157

MaRIE theory, modeling and computation roadmap executive summary  

SciTech Connect (OSTI)

The confluence of MaRIE (Matter-Radiation Interactions in Extreme) and extreme (exascale) computing timelines offers a unique opportunity in co-designing the elements of materials discovery, with theory and high performance computing, itself co-designed by constrained optimization of hardware and software, and experiments. MaRIE's theory, modeling, and computation (TMC) roadmap efforts have paralleled 'MaRIE First Experiments' science activities in the areas of materials dynamics, irradiated materials and complex functional materials in extreme conditions. The documents that follow this executive summary describe in detail for each of these areas the current state of the art, the gaps that exist and the road map to MaRIE and beyond. Here we integrate the various elements to articulate an overarching theme related to the role and consequences of heterogeneities which manifest as competing states in a complex energy landscape. MaRIE experiments will locate, measure and follow the dynamical evolution of these heterogeneities. Our TMC vision spans the various pillar science and highlights the key theoretical and experimental challenges. We also present a theory, modeling and computation roadmap of the path to and beyond MaRIE in each of the science areas.

Lookman, Turab [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

158

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

159

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network [OSTI]

of the Zeeman Hamil- tonian gS#3;BBS?z+gj#3;BBj?z, and from Eq. #1;1#2;: m ? mMF #14; mQF = ? #3;B j S + j #1;gS ? gj#2; . #1;5#2; When j=1/2 and gS=gj =2 the quantum fluctuation correc- tion to the magnetization vanishes even though the mean- field...Low-temperature magnetization of (Ga,Mn)As semiconductors T. Jungwirth,1,2 J. Ma?ek,3 K. Y. Wang,2 K. W. Edmonds,2 M. Sawicki,4 M. Polini,5 Jairo Sinova,6 A. H. MacDonald,7 R. P. Campion,2,8 L. X. Zhao,2,8 N. R. S. Farley,2,8 T. K. Johal,8 G. van...

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

160

35 Garvey Street Everett, Massachusetts 02149  

E-Print Network [OSTI]

.............................................................................................................................. 2 RECORDING THERMOMETER ...............................................................................11 INSTALLATION FOR OPTIONAL RECORDING THERMOMETER ....................................................................................................................................................................12 REPLACEMENT PARTS FOR 24 HOUR THERMOMETER

Kleinfeld, David

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Small-signal modulation and differential gain of red-emitting (??=?630?nm) InGaN/GaN quantum dot lasers  

SciTech Connect (OSTI)

We report small-signal modulation bandwidth and differential gain measurements of a ridge waveguide In{sub 0.4}Ga{sub 0.6}N/GaN quantum dot laser grown by molecular beam epitaxy. The laser peak emission is at ??=?630?nm. The ?3?dB bandwidth of an 800??m long device was measured to be 2.4?GHz at 250?mA under pulsed biasing, demonstrating the possibility of high-speed operation of these devices. The differential gain was measured to be 5.3?×?10{sup ?17}?cm{sup 2}, and a gain compression factor of 2.87?×?10{sup ?17}?cm{sup 3} is also derived from the small-signal modulation response.

Frost, Thomas; Banerjee, Animesh; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2013-11-18T23:59:59.000Z

162

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

163

MA/MSW DUAL DEGREE PROGRAM In 1989 the Dual Degree in Social Work (MSW) and Pastoral Ministry (MA) Program was  

E-Print Network [OSTI]

MA/MSW DUAL DEGREE PROGRAM 2013-2014 PURPOSE In 1989 the Dual Degree in Social Work (MSW) or Theology and Ministry (academic year) (MA) and the Master of Social Work (MSW) degrees in approximately 3 Standards Review Committee and the Dean of the GSSW. 4. The integrity of both the MA and the MSW degrees

Huang, Jianyu

164

GA Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:GA-Solar

165

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

166

Will This #Hashtag Be Popular Tomorrow? Zongyang Ma  

E-Print Network [OSTI]

Will This #Hashtag Be Popular Tomorrow? Zongyang Ma zma4@e.ntu.edu.sg Aixin Sun axsun@ntu.edu.sg Gao Cong gaocong@ntu.edu.sg School of Computer Engineering Nanyang Technological University, Singapore this prediction problem as a classification problem and evaluate the effectiveness of the extracted features

Aixin, Sun

167

ON SOLAR NEUTRINO PROBLEM TIAN MA AND SHOUHONG WANG  

E-Print Network [OSTI]

ON SOLAR NEUTRINO PROBLEM TIAN MA AND SHOUHONG WANG Abstract. The current neutrino oscillation an alternative resolution to the solar neutrino loss problem. Contents 1. Introduction 1 2. Discrepancy of Solar, there are three flavors of neutrinos: the electron neutrino e, the tau neutrino and the mu neutrino µ. The solar

168

MA 387 ' SOIU' Lm Exam 2 April 16, 1982  

E-Print Network [OSTI]

MA 387 ' SOIU' Lm Exam 2 April 16, 1982. Name. (10) l _ 'Calculate each of the following; a) ?{(a,b)la < 0 and b 1 2} t: Cola) b) u{(a,b)l[a,b] 5 (1,2)}. : .Cl, 9.).

169

Index of /~jbeckley/WD/MA 373/F14  

E-Print Network [OSTI]

... 14-Jan-2015 15:16, 418K. [ ], MA373 F14 Test 4-1.pdf, 14-Jan-2015 15:27, 330K. Apache/2.2.3 (Red Hat) Server at www.math.purdue.edu Port 80.

170

MA STER'S THESIS Optimisation of fresh water consumption  

E-Print Network [OSTI]

MA STER'S THESIS Optimisation of fresh water consumption for Doggy AB using simulation Maja Olsson Göteborg Sweden 2005 #12;Thesis for the Degree of Master of Science Optimisation of fresh water consumption Göteborg 2005 #12;Abstract Doggy AB is the only Swedish producer of tinned pet food. In the food process

Patriksson, Michael

171

Engineering Ethics Richard A. Burgess, M.A.  

E-Print Network [OSTI]

Engineering Ethics Richard A. Burgess, M.A. Texas Tech T-STEM Center and Deputy Director, National Institute for Engineering Ethics Summer 2012 #12;STEM includes Engineering · No single profession impacts modern life as thoroughly as engineering does. (examples: cars, buildings, electronic devices, water

Gelfond, Michael

172

1254 Chestnut Street Newton, MA 02464-1418  

E-Print Network [OSTI]

1254 Chestnut Street Newton, MA 02464-1418 Tel: (617) 965-5511 Fax: (617) 965-5818 MATERIAL SAFETY DATA SHEET PAGE 1 26 June 2001 SECTION 1. CHEMICAL IDENTIFICATION: No positive response for several tested salmonella strains. CARCINOGENICITY: Not listed in NTP, IARC, or OSHA

Rubloff, Gary W.

173

MA10209 Algebra 1A Counting Partitions: GCS  

E-Print Network [OSTI]

a slightly different question. How many ways are there to partition five people into three teams, one of sizeMA10209 Algebra 1A Counting Partitions: GCS 30-x-11 The course website is http://people on enumerating partitions. Suppose that you have five people, and you wish to put them into three teams: a blue

Smith, Geoff

174

THOMAS J. FALEN, DHSc, MA, RHIA 2718 TREMONT DRIVE  

E-Print Network [OSTI]

Coding Procedures II (CPT) #12;3 HIM 4508C Quality Management HIM 4656C Health Information Management Systems HIM 4344 HIM Departmental Management HIM 4676 Professional Development and Issues in HIM HSA 6938 University Mesa, Arizona March 2014 M.A. Health Services Management Webster University Orlando, Florida May

Wu, Shin-Tson

175

MA 747, Spring 2012 Probability and Stochastic Process II  

E-Print Network [OSTI]

MA 747, Spring 2012 Probability and Stochastic Process II Lecture Notes and Reference book The course will be based on the lecture notes and the reference book: Stochastic Processes, S.R.S. Varadhan theory needed for advanced applications in stochastic processes. It provides the basic probability theory

Ito, Kazufumi

176

Native point defects in GaSb  

SciTech Connect (OSTI)

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

2014-10-14T23:59:59.000Z

177

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

178

Beta decay of Ga-62  

E-Print Network [OSTI]

from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

179

MA in Modern Languages The School of Languages and Literatures invites applications for its taught MA in Modern  

E-Print Network [OSTI]

MA in Modern Languages. With dedicated academic staff in its subject areas of French, German, Italian courses on cultural and literary theory, choosing their remaining four from a broad range of options Theory Introduction to Literary Theory Minor Thesis (30 credits) Optional Modules (Four of:) French

180

Psychiatric Bulletin (2006), 30,1^2 COLIN O'GA R A A ND MA RCU S MUNA FO'  

E-Print Network [OSTI]

of cigarette smoking and tobacco addiction. Smoking in schizophrenia and depression is thought in part to repre with such high smoking rates, we have a duty of care to protect them from the ill effects of tobacco smoke. Our efforts should include informing patients of the best treatments available and directing them

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

182

Experimental Physical Sciences Vistas: MaRIE (draft)  

SciTech Connect (OSTI)

To achieve breakthrough scientific discoveries in the 21st century, a convergence and integration of world-leading experimental facilities and capabilities with theory, modeling, and simulation is necessary. In this issue of Experimental Physical Sciences Vistas, I am excited to present our plans for Los Alamos National Laboratory's future flagship experimental facility, MaRIE (Matter-Radiation Interactions in Extremes). MaRIE is a facility that will provide transformational understanding of matter in extreme conditions required to reduce or resolve key weapons performance uncertainties, develop the materials needed for advanced energy systems, and transform our ability to create materials by design. Our unique role in materials science starting with the Manhattan Project has positioned us well to develop a contemporary materials strategy pushing the frontiers of controlled functionality - the design and tailoring of a material for the unique demands of a specific application. Controlled functionality requires improvement in understanding of the structure and properties of materials in order to synthesize and process materials with unique characteristics. In the nuclear weapons program today, improving data and models to increase confidence in the stockpile can take years from concept to new knowledge. Our goal with MaRIE is to accelerate this process by enhancing predictive capability - the ability to compute a priori the observables of an experiment or test and pertinent confidence intervals using verified and validated simulation tools. It is a science-based approach that includes the use of advanced experimental tools, theoretical models, and multi-physics codes, simultaneously dealing with multiple aspects of physical operation of a system that are needed to develop an increasingly mature predictive capability. This same approach is needed to accelerate improvements to other systems such as nuclear reactors. MaRIE will be valuable to many national security science challenges. Our first issue of Vistas focused on our current national user facilities (the Los Alamos Neutron Science Center [LANSCE], the National High Magnetic Field Laboratory-Pulsed Field Facility, and the Center for Integrated Nanotechnologies) and the vitality they bring to our Laboratory. These facilities are a magnet for students, postdoctoral researchers, and staff members from all over the world. This, in turn, allows us to continue to develop and maintain our strong staff across the relevant disciplines and conduct world-class discovery science. The second issue of Vistas was devoted entirely to the Laboratory's materials strategy - one of the three strategic science thrusts for the Laboratory. This strategy has helped focus our thinking for MaRIE. We believe there is a bright future in cutting-edge experimental materials research, and that a 21st-century facility with unique capability is necessary to fulfill this goal. The Laboratory has spent the last several years defining MaRIE, and this issue of Vistas presents our current vision of that facility. MaRIE will leverage LANSCE and our other user facilities, as well as our internal and external materials community for decades to come, giving Los Alamos a unique competitive advantage, advancing materials science for the Laboratory's missions and attracting and recruiting scientists of international stature. MaRIE will give the international materials research community a suite of tools capable of meeting a broad range of outstanding grand challenges.

Shlachter, Jack [Los Alamos National Laboratory

2010-09-08T23:59:59.000Z

183

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents [OSTI]

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

184

MaGKeyS : a haptic guidance keyboard system for facilitating sensorimotor training and rehabilitation  

E-Print Network [OSTI]

The Magnetic Guidance Keyboard System (MaGKeyS) embodies a new haptic guidance technology designed to facilitate sensorimotor training and rehabilitation. MaGKeyS works by employing active magnetic force to guide finger ...

Lewiston, Craig Edwin

2009-01-01T23:59:59.000Z

185

E-Print Network 3.0 - ages 600-570 ma Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The former age signature is more... , zircons have 2850 Ma cores and 2730 Ma rims. Titanite ages are similar to those from zircon rims... and zircon using LA-ICP-MS. The oldest...

186

Cell cycle-dependent SUMO-1 conjugation to nuclear mitotic apparatus protein (NuMA)  

SciTech Connect (OSTI)

Highlights: •NuMA is modified by SUMO-1 in a cell cycle-dependent manner. •NuMA lysine 1766 is the primary target site for SUMOylation. •SUMOylation-deficient NuMA induces multiple spindle poles during mitosis. •SUMOylated NuMA induces microtubule bundling. -- Abstract: Covalent conjugation of proteins with small ubiquitin-like modifier 1 (SUMO-1) plays a critical role in a variety of cellular functions including cell cycle control, replication, and transcriptional regulation. Nuclear mitotic apparatus protein (NuMA) localizes to spindle poles during mitosis, and is an essential component in the formation and maintenance of mitotic spindle poles. Here we show that NuMA is a target for covalent conjugation to SUMO-1. We find that the lysine 1766 residue is the primary NuMA acceptor site for SUMO-1 conjugation. Interestingly, SUMO modification of endogenous NuMA occurs at the entry into mitosis and this modification is reversed after exiting from mitosis. Knockdown of Ubc9 or forced expression of SENP1 results in impairment of the localization of NuMA to mitotic spindle poles during mitosis. The SUMOylation-deficient NuMA mutant is defective in microtubule bundling, and multiple spindles are induced during mitosis. The mitosis-dependent dynamic SUMO-1 modification of NuMA might contribute to NuMA-mediated formation and maintenance of mitotic spindle poles during mitosis.

Seo, Jae Sung; Kim, Ha Na; Kim, Sun-Jick; Bang, Jiyoung; Kim, Eun-A; Sung, Ki Sa [Department of Biological Sciences, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)] [Department of Biological Sciences, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yoon, Hyun-Joo [TissueGene Inc. 9605 Medical Center Dr., Rockville, MD 20850 (United States)] [TissueGene Inc. 9605 Medical Center Dr., Rockville, MD 20850 (United States); Yoo, Hae Yong [Department of Health Sciences and Technology, Samsung Advanced Institute for Health Sciences and Technology, Samsung Medical Center, Sungkyunkwan University, Seoul 135-710 (Korea, Republic of)] [Department of Health Sciences and Technology, Samsung Advanced Institute for Health Sciences and Technology, Samsung Medical Center, Sungkyunkwan University, Seoul 135-710 (Korea, Republic of); Choi, Cheol Yong, E-mail: choicy@skku.ac.kr [Department of Biological Sciences, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-01-03T23:59:59.000Z

187

CSC 1051 M.A. Papalaskari, Villanova University CSC 1051 Data Structures and Algorithms I  

E-Print Network [OSTI]

CSC 1051 M.A. Papalaskari, Villanova University Repetition CSC 1051 ­ Data Structures.6 Interactive Programs · 5.1 Boolean Expressions · 5.2 The if Statement · 5.4 The while Statement CSC 1051 M.A CSC 1051 M.A. Papalaskari, Villanova University #12;Flow of Control The order of statement execution

Papalaskari, Mary-Angela

188

CSC 1051 M.A. Papalaskari, Villanova University Data Representation and  

E-Print Network [OSTI]

CSC 1051 M.A. Papalaskari, Villanova University Data Representation and Applets CSC 1051 ­ Data conversions · Image representation · Java Applets CSC 1051 M.A. Papalaskari, Villanova University #12;Reverse CSC 1051 M.A. Papalaskari, Villanova University Review #12;Memory devices store data of all kinds 9278

Papalaskari, Mary-Angela

189

CSC 1051 M.A. Papalaskari, Villanova University CSC 1051 Data Structures and Algorithms I  

E-Print Network [OSTI]

CSC 1051 M.A. Papalaskari, Villanova University Repetition CSC 1051 ­ Data Structures 1051 M.A. Papalaskari, Villanova University statement 1 statement 2 statement 3 statement 4 boolean 1 statements: enable us to alter control flow CSC 1051 M.A. Papalaskari, Villanova University statement 1

Papalaskari, Mary-Angela

190

CSC 1051 M.A. Papalaskari, Villanova University CSC 1051 Data Structures and Algorithms I  

E-Print Network [OSTI]

CSC 1051 M.A. Papalaskari, Villanova University Repetition CSC 1051 ­ Data Structures 1051 M.A. Papalaskari, Villanova University statement 1 statement 2 statement 3 statement 4 boolean 1 does it take for the account balance to be double the original? CSC 1051 M.A. Papalaskari, Villanova

Papalaskari, Mary-Angela

191

MA47, a Fortran code for direct solution of indefinite sparse symmetric linear systems  

E-Print Network [OSTI]

-first search of the assembly tree ........................ 23 3.8 MA47M: calculate storage and operation countsRAL-95-001 MA47, a Fortran code for direct solution of indefinite sparse symmetric linear systems indefinite symmetric linear systems of equations. It is intended to complement the Harwell code MA27

Mihajlovic, Milan D.

192

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

193

Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs  

E-Print Network [OSTI]

AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

Gao, Feng, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

194

Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA  

E-Print Network [OSTI]

Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

McGaughey, Alan

195

DOE - Office of Legacy Management -- Tracerlab Inc - MA 11  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou areDowntown Site - MOTracerlab Inc - MA 11 FUSRAP

196

El Ma Electronic Machining srl | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORT Americium/CuriumSunwaysDatangGmbH JumpEcostream JumpLtdMa Electronic

197

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network [OSTI]

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Boyer, Edmond

198

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

199

Fusion materials irradiations at MaRIE's fission fusion facility  

SciTech Connect (OSTI)

Los Alamos National Laboratory's proposed signature facility, MaRIE, will provide scientists and engineers with new capabilities for modeling, synthesizing, examining, and testing materials of the future that will enhance the USA's energy security and national security. In the area of fusion power, the development of new structural alloys with better tolerance to the harsh radiation environments expected in fusion reactors will lead to improved safety and lower operating costs. The Fission and Fusion Materials Facility (F{sup 3}), one of three pillars of the proposed MaRIE facility, will offer researchers unprecedented access to a neutron radiation environment so that the effects of radiation damage on materials can be measured in-situ, during irradiation. The calculated radiation damage conditions within the F{sup 3} match, in many respects, that of a fusion reactor first wall, making it well suited for testing fusion materials. Here we report in particular on two important characteristics of the radiation environment with relevancy to radiation damage: the primary knock-on atom spectrum and the impact of the pulse structure of the proton beam on temporal characteristics of the atomic displacement rate. With respect to both of these, analyses show the F{sup 3} has conditions that are consistent with those of a steady-state fusion reactor first wall.

Pitcher, Eric J [Los Alamos National Laboratory

2010-10-06T23:59:59.000Z

200

Science and Technology of the 10-MA Spherical Tori  

SciTech Connect (OSTI)

The Spherical Torus (ST) configuration has recently emerged as an example of confinement concept innovation that enables attractive steps in the development of fusion energy. The scientific potential for the ST has been indicated by recent encouraging results from START,2 CDX-U, and HIT. The scientific principles for the D-fueled ST will soon be tested by NSTX (National Spherical Torus Experiment3) in the U.S. and MAST (Mega-Amp Spherical Tokamak4) in the U.K. at the level of l-2 MA in plasma current. More recently, interest has grown in the U.S. in the possibility of near-term ST fusion burn devices at the level of 10 MA in plasma current. The missions for these devices would be to test burning plasma performance in a small, pulsed D-T-fueled ST (i.e., DTST) and to develop fusion energy technologies in a small steady state ST-based Volume Neutron Source (VNS). This paper reports the results of analysis of the key science and technology issues for these devices.

Peng, Y-K.M.

1999-11-14T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

202

TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer  

SciTech Connect (OSTI)

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

2008-01-01T23:59:59.000Z

203

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

204

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

205

Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption  

SciTech Connect (OSTI)

We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane sapphire substrate. The output power and dominant wavelength at 20?mA are 0.24 mW and 556.3?nm. High resolution x-ray diffraction, photoluminescence, and electroluminescence measurements demonstrate that efficiency enhancement could be partially attributed to crystal quality improvement of the active region resulted from reduced In clusters and relevant defects on the surface of InGaN layer by introducing interruptions. The less tilted energy band in the quantum well is also caused by the decrease of In-content gradient along c-axis resulted from In segregation during the interruptions, which increases spatial overlap of electron-hole wavefunction and thus the internal quantum efficiency. The latter also leads to smaller blueshift of dominant wavelength with current increasing.

Du, Chunhua; Ma, Ziguang; Zhou, Junming; Lu, Taiping; Jiang, Yang; Zuo, Peng; Jia, Haiqiang; Chen, Hong, E-mail: hchen@iphy.ac.cn [Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2014-08-18T23:59:59.000Z

206

2.8-Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus...  

Open Energy Info (EERE)

Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus Mountains (Russia), Contemporaneous Granites, And Associated Ore Deposits Jump to: navigation, search OpenEI Reference...

207

E-Print Network 3.0 - alcon laboratories ma60 Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sample search results for: alcon laboratories ma60 Page: << < 1 2 3 4 5 > >> 1 Chemical Engineering Research Support 2007 Abitibi-Consolidated Inc. Summary: Agriculture &...

208

Course Syllabus for MA 16100, Fall 2014 Course Objectives: 1. To ...  

E-Print Network [OSTI]

Course Syllabus for MA 16100, Fall 2014. Course Objectives: 1. To compute limits and to apply limit laws. 2. To apply rules of differentiation to compute ...

2014-09-17T23:59:59.000Z

209

Syllabus for MA 16200, Spring 2013 Homework: There are 36 online ...  

E-Print Network [OSTI]

Syllabus for MA 16200, Spring 2013. Homework: There are 36 online assignments using WebAssign https://www.webassign.net/purdue/login.html. Due dates ...

2013-01-07T23:59:59.000Z

210

A rational minor actinide (MA) recycling concept based on innovative oxide fuel with high AM content  

SciTech Connect (OSTI)

A rational MA recycle concept based on high Am content fuel has been proposed. A design study of an Am- MOX fabrication plant, which is a key facility for the MA recycle concept, has been done and the facility concept was clarified from the viewpoint of basic process viability. Preliminary cost estimation suggested that the total construction cost of the MA recycle facilities including Am-MOX, Np-MOX and MA recovery could be comparable with that of the large scale LWR-MOX fabrication plant required for plutonium in LWR fuel cycle. (authors)

Tanaka, Kenya; Sato, Isamu; Ishii, Tetsuya; Yoshimochi, Hiroshi; Asaga, Takeo [Japan Atomic Energy Agency, 4002 Narita-cho, O-arai-machi, Higasiibaraki-gun, Ibaraki-ken, 311-1393 (Japan); Kurosaki, Ken [Osaka University, 2-1 Yamadaoka, Suita-shi, Osaka 565-0871 (Japan)

2007-07-01T23:59:59.000Z

211

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

212

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures  

SciTech Connect (OSTI)

In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

2014-01-13T23:59:59.000Z

213

Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire  

SciTech Connect (OSTI)

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-08T23:59:59.000Z

214

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

215

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

216

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

217

Development of a Hydronic Rooftop Unit-HyPak-MA  

SciTech Connect (OSTI)

The majority of U.S. commercial floor space is cooled by rooftop HVAC units (RTUs). RTU popularity derives chiefly from their low initial cost and relative ease of service access without disturbing building occupants. Unfortunately, current RTUs are inherently inefficient due to a combination of characteristics that unnecessarily increase cooling loads and energy use. 36% percent of annual U.S. energy, and two-thirds of electricity, is consumed in and by buildings. Commercial buildings consume approximately 4.2 quads of energy each year at a cost of $230 billion per year, with HVAC equipment consuming 1.2 quads of electricity. More than half of all U.S. commercial floor space is cooled by packaged HVAC units, most of which are rooftop units (RTUs). Inefficient RTUs create an estimated 3.5% of U.S. CO{sub 2} emissions, thus contributing significantly to global warming5. Also, RTUs often fail to maintain adequate ventilation air and air filtration, reducing indoor air quality. This is the second HyPak project to be supported by DOE through NETL. The prior project, referred to as HyPak-1 in this report, had two rounds of prototype fabrication and testing as well as computer modeling and market research. The HyPak-1 prototypes demonstrated the high performance capabilities of the HyPak concept, but made it clear that further development was required to reduce heat exchanger cost and improve system reliability before HyPak commercialization can commence. The HyPak-1 prototypes were limited to about 25% ventilation air fraction, limiting performance and marketability. The current project is intended to develop a 'mixed-air' product that is capable of full 0-100% modulation in ventilation air fraction, hence it was referred to as HyPak-MA in the proposal. (For simplicity, the -MA has been dropped when referencing the current project.) The objective of the HyPak Project is to design, develop and test a hydronic RTU that provides a quantum improvement over conventional RTU performance. Our proposal targeted 60% and 50% reduction in electrical energy use by the HyPak RTU for dry and humid climates, respectively, when compared with a conventional unit, and reduction in peak energy consumption of 50% and 33% respectively. In addition to performance targets, our goal is to develop a production-ready design with durability, reliability and maintainability similar to air-cooled packaged equipment, and that can be commercialized immediately following the conclusion of this project.

Eric Lee; Mark Berman

2009-11-14T23:59:59.000Z

218

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

219

InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall  

E-Print Network [OSTI]

°C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

Woodall, Jerry M.

220

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network [OSTI]

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

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221

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

222

MaJIC: a Matlab Just-In-time Compiler ? George Almasi and David A. Padua  

E-Print Network [OSTI]

MaJIC: a Matlab Just-In-time Compiler ? George Almasi and David A. Padua galmasi experience with MaJIC, a just-in- time compiler for MATLAB. In the recent past, several compiler projects claimed large performance improvements when processing MATLAB code. Most of these projects are static

Padua, David

223

M.A. in Political Science Degree Requirements Department of Political Science, Florida Atlantic University  

E-Print Network [OSTI]

M.A. in Political Science Degree Requirements Department of Political Science, Florida Atlantic University Students pursuing a Master of Arts Degree in Political Science are required to meet the following as an undergraduate. 4. Students entering the M.A. program who did not major in political science as undergraduates

Fernandez, Eduardo

224

*Course can be taken fall or spring ** Yearlong course MA/MSW DUAL DEGREE PROGRAM  

E-Print Network [OSTI]

1 *Course can be taken fall or spring ** Yearlong course MA/MSW DUAL DEGREE PROGRAM 2014-2015 PURPOSE In 1989 the Dual Degree in Social Work (MSW) and Pastoral Ministry (MA) Program was developed) and the Master of Social Work (MSW) degrees in approximately 3 years of full-time study (less if taking STM

Huang, Jianyu

225

Characterization and In-Situ Ion-Irradiation of MA957 ODS Steel Djamel Kaoumi1  

E-Print Network [OSTI]

Characterization and In-Situ Ion-Irradiation of MA957 ODS Steel Djamel Kaoumi1 , Arthur Motta1/Martensitic steels produced by mechanical alloying with Y2O3 particles are considered as possible cladding materials--II #12;Fig. 1. (a) Bright Field TEM images of the grain microstructure in MA957 ODS steel in transversal

Motta, Arthur T.

226

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect (OSTI)

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNL’s Hanford External Dosimetry Program which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. Rev. 0 marks the first revision to be released through PNNL’s Electronic Records & Information Capture Architecture (ERICA) database.

Rathbone, Bruce A.

2005-02-25T23:59:59.000Z

227

Biochemical characterization of derivatives of MA-T12D11, a TAFI neutralizing antibody  

E-Print Network [OSTI]

106ka(1/Ms) scFvFabMAT12D11 0 1 2 3 4 5 6 7 8 9 0 10 20 30 40 50 60 70 80 90 100 110 MA T12D11 Fab T12D11 scFvT12D11 Molar excess of MA/Fab/scFv % i n h i b i t i o n o f T A F I a a c t i v i t y Table 1: Binding parameters (ka, kd and KA) of MA...-T12D11 and its derivatives for binding to TAFI The results represent mean ? SD (n a1 3) Figure 4: % inhibition of TAFIa activity by MA/Fab/scFv TAFI was activated with T/TM in presence of MA, Fab or scFv. The results represent mean ? SD (n a2 3...

Develter, J.; Declerck, P. J.; Gils, A.

2006-10-27T23:59:59.000Z

228

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires  

SciTech Connect (OSTI)

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14T23:59:59.000Z

229

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template  

SciTech Connect (OSTI)

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-12-19T23:59:59.000Z

230

REGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based  

E-Print Network [OSTI]

the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit), metal oxide varistor (MOV), and transient voltage suppressor (TVS) diodes are the state-of-the- artREGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal­Semiconductor­Metal

Chow, Lee

231

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

232

Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets  

SciTech Connect (OSTI)

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

2014-09-21T23:59:59.000Z

233

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

234

Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)  

SciTech Connect (OSTI)

GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2013-12-02T23:59:59.000Z

235

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect (OSTI)

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNL’s Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNL’s Electronic Records & Information Capture Architecture (ERICA) database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document.

Rathbone, Bruce A.

2009-08-28T23:59:59.000Z

236

FRACTIONAL SKEW MONOID RINGS P. ARA, M.A. GONZ'ALEZ-BARROSO, K.R. GOODEARL, AND E. PARDO  

E-Print Network [OSTI]

FRACTIONAL SKEW MONOID RINGS P. ARA, M.A. GONZ'ALEZ-BARROSO #12; 2 P. ARA, M.A. GONZ'ALEZ-BARROSO, K.R. GOODEARL, AND E. PARDO In this paper

Bigelow, Stephen

237

Quantum confinement in GaP nanoclusters  

SciTech Connect (OSTI)

We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

Laurich, B.K.; Smith, D.C.; Healy, M.D.

1994-06-01T23:59:59.000Z

238

www.math.tu-berlin.de/mathe-ini Di, 10.4. 11:30 MA 844 Frhstck  

E-Print Network [OSTI]

www.math.tu-berlin.de/mathe-ini Di, 10.4. 11:30 MA 844 Frühstück Im Mathetreff gibt es gratis Kaffee und Brötchen für alle Erstsemester (Mathe, WiMa, TechMa). Studis, die im Café oder der Ini aktiv sind, beantworten deine Fragen. Do, 12.4. 18:00 MA 847 Erstes Iniplenum Die Ini trifft sich ungefähr

Nabben, Reinhard

239

All undergraduate/Bachelor degrees BSc/BA/BEng/MEng 13,000 Childhood Studies MA 12,500  

E-Print Network [OSTI]

All undergraduate/Bachelor degrees BSc/BA/BEng/MEng £13,000 Childhood Studies MA £12,500 Developmental and Therapeutic Play MA/PGDip/PGCert £12,500 Health Care Management MSc £13,000 Public Health/BA/BEng/MEng £11,750 Ancient Egyptian Culture MA £12,500 Ancient History & Classical Culture MA £12,500 Ancient

Harman, Neal.A.

240

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect (OSTI)

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNL’s Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. Rev. 0 marks the first revision to be released through PNNL’s Electronic Records & Information Capture Architecture (ERICA) database. Revision numbers that are whole numbers reflect major revisions typically involving changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Revision Log: Rev. 0 (2/25/2005) Major revision and expansion. Rev. 0.1 (3/12/2007) Minor revision. Updated Chapters 5, 6 and 9 to reflect change in default ring calibration factor used in HEDP dose calculation software. Factor changed from 1.5 to 2.0 beginning January 1, 2007. Pages on which changes were made are as follows: 5.23, 5.69, 5.78, 5.80, 5.82, 6.3, 6.5, 6.29, 9.2.

Rathbone, Bruce A.

2007-03-12T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect (OSTI)

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at the U.S. Department of Energy (DOE) Hanford site. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with requirements of 10 CFR 835, the DOE Laboratory Accreditation Program, the DOE Richland Operations Office, DOE Office of River Protection, DOE Pacific Northwest Office of Science, and Hanford’s DOE contractors. The dosimetry system is operated by the Pacific Northwest National Laboratory (PNNL) Hanford External Dosimetry Program which provides dosimetry services to PNNL and all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNL’s Electronic Records & Information Capture Architecture database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2.

Rathbone, Bruce A.

2010-04-01T23:59:59.000Z

242

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect (OSTI)

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at the U.S. Department of Energy (DOE) Hanford site. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with requirements of 10 CFR 835, the DOE Laboratory Accreditation Program, the DOE Richland Operations Office, DOE Office of River Protection, DOE Pacific Northwest Office of Science, and Hanford’s DOE contractors. The dosimetry system is operated by the Pacific Northwest National Laboratory (PNNL) Hanford External Dosimetry Program which provides dosimetry services to PNNL and all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNL’s Electronic Records & Information Capture Architecture database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2.

Rathbone, Bruce A.

2011-04-04T23:59:59.000Z

243

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

244

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

245

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

246

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots  

SciTech Connect (OSTI)

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

2014-01-06T23:59:59.000Z

247

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

248

Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes  

SciTech Connect (OSTI)

We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

2013-12-04T23:59:59.000Z

249

E-Print Network 3.0 - actinide ma transmutation Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

DE PHYSIQUE Colloque C8, supplement au no 12, Tome 47, decembre 1986 Summary: OF THE HEAVY FERMION COMPOUND UBe13 J.M. TRANQUADA, S.M. HEALD, M.A. PICK, Z. FISK* and J.L....

250

University Timetabling through Conceptual Jonathan Lee,1,* Shang-Pin Ma,1,  

E-Print Network [OSTI]

University Timetabling through Conceptual Modeling Jonathan Lee,1,* Shang-Pin Ma,1, Lien Fu Lai,2 system. Expertise helps in reducing the search space and in fitting the solution to the context

Lee, Jonathan

251

Syllabus for MA 440 The text is Mathematical Analysis I, by Elias ...  

E-Print Network [OSTI]

Syllabus for MA 440. The text is Mathematical Analysis I, by Elias Zakon, available at http://www.trillia.com/zakon-analysisI.html. The material from Chapter 1, ...

2014-08-25T23:59:59.000Z

252

E-Print Network 3.0 - agente compatibilizante pe-g-ma Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

pe-g-ma Page: << < 1 2 3 4 5 > >> 1 Creep Analysis of Bamboo High-Density Polyethylene Composites: Effect of Interfacial Treatment and Fiber Summary: , the use of maleic...

253

DEPART:MENT OF ENERGY EERE PROJECT MA..'JAGEMENT CENTER NEPA...  

Broader source: Energy.gov (indexed) [DOE]

MENT OF ENERGY EERE PROJECT MA..'JAGEMENT CENTER NEPA DETERMINATION Page 1 of2 RI<:CIPIENT:Wyoming Business Council, State Energy Office STATE: WY PROJECT TITLE: State Energy...

255

Ma34a Prob. y Proc. Estocasticos 25 de Abril, 2006 Lista de Distribuciones  

E-Print Network [OSTI]

Ma34a Prob. y Proc. Estocâ??asticos 25 de Abril, 2006 Lista de Distribuciones por Marcos Kiwi Modelos! # i e -# , si i # SX = N . Modelos absolutamente continuos: A continuaciâ??on se da la funciâ??on densidad

Rapaport, Iván

256

Optimization models in finance Ma 450 Darinka Dentcheva Fall 2012 darinka.dentcheva@stevens.edu  

E-Print Network [OSTI]

Optimization models in finance Ma 450 Darinka Dentcheva Fall 2012 darinka and dynamic optimization problems occurring in finance. We shall discuss linear and non-linear optimization models of finance, dynamic (se- quential) optimization, optimization under uncertainty, mathematical

Dentcheva, Darinka

257

E-Print Network 3.0 - alloy-ma-956 Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

<< < 1 2 > >> 1 UPDATE ON THE STATUS OF ODS ALLOYS FOR FOSSIL ENERGY APPLICATIONS I.G. Wright and B.A. Pint Summary: h cycles), starting at 1 to 2kh for ODS alloys MA956 and...

258

The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD  

E-Print Network [OSTI]

Introduction to Engineering Computation · STAT 310 Probability and Statistics · STAT 410 Introduction246 Statistics The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD Course engineering, computational and applied mathematics, managerial studies, mathematics, political science

Richards-Kortum, Rebecca

259

The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD  

E-Print Network [OSTI]

Introduction to Engineering Computation · STAT 310 Probability and Statistics · STAT 410 Introduction253 Statistics The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD Course engineering, computational and applied mathematics, managerial studies, mathematics, political science

Richards-Kortum, Rebecca

260

On strongly GA-convex functions and stochastic processes  

SciTech Connect (OSTI)

In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

2014-08-20T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

262

MA092 Geometria plana e analitica Comprimento da circunfer^encia -Area de superficies planas  

E-Print Network [OSTI]

MA092 ­ Geometria plana e anal´itica Comprimento da circunfer^encia - ´Area de superf´icies planas uma volta: 2R = D 61, 5 cm Dist^ancia total: 10.000.000 cm N´umero de voltas: 10.000.000/(61, 5) 51 - IMECC)MA092 ­ Geometria plana e anal´itica Agosto de 2013 5 / 22 ´Areas Ret^angulo ´Area AR = b · h

Gomes, Francisco A. M.

263

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network [OSTI]

Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

Carroll, James Mason

2012-06-07T23:59:59.000Z

264

MA FAshiON bUsiNEss MA FAshiON MArKETiNg ANd cOMMUNicATiON  

E-Print Network [OSTI]

and South Korea. jhy1492@naver.com Image: Tesco, Retail Fashion Brand. By: Hyeyoun Jun #12;yU li (AMy) MA, and the influence it has on fashion brands and the future of this technology. psk_sawa@hotmail.com Image: 3-D Transform Themselves in the Thai Fashion Market, by creating their Own Brand. My project researches new

Evans, Paul

265

Emploi du temps Licence de Mathmatiques semestre 6 MA= parcours maths approfondies M= parcours maths MI= parcours math-info ( groupe C en LI2)  

E-Print Network [OSTI]

M= parcours maths MI= parcours math-info ( groupe C en LI2) 08h00-09h30 09h45-11h15 11h30-13h00 13h15-14h45 15h00-16h30 16h45-18h15 lundi MA MA M M MI MI mardi MA Anglais MA M TD Histoire des Maths M 3.2 M MI Anglais MI mercredi MA TD Variable Complexe M 3.2 MA M M MI MI jeudi MA MA M M MI MI

Berger, Clemens

266

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect (OSTI)

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNL’s Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNL’s Electronic Records & Information Capture Architecture (ERICA) database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2. Revision Log: Rev. 0 (2/25/2005) Major revision and expansion. Rev. 0.1 (3/12/2007) Updated Chapters 5, 6 and 9 to reflect change in default ring calibration factor used in HEDP dose calculation software. Factor changed from 1.5 to 2.0 beginning January 1, 2007. Pages on which changes were made are as follows: 5.23, 5.69, 5.78, 5.80, 5.82, 6.3, 6.5, 6.29, and 9.2. Rev 0.2 (8/28/2009) Updated Chapters 3, 5, 6, 8 and 9. Chapters 6 and 8 were significantly expanded. References in the Preface and Chapters 1, 2, 4, and 7 were updated to reflect updates to DOE documents. Approved by HPDAC on 6/2/2009. Rev 1.0 (1/1/2010) Major revision. Updated all chapters to reflect the Hanford site wide implementation on January 1, 2010 of new DOE requirements for occupational radiation protection. The new requirements are given in the June 8, 2007 amendment to 10 CFR 835 Occupational Radiation Protection (Federal Register, June 8, 2007. Title 10 Part 835. U.S., Code of Federal Regulations, Vol. 72, No. 110, 31904-31941). Revision 1.0 to the manual replaces ICRP 26 dosimetry concepts and terminology with ICRP 60 dosimetry concepts and terminology and replaces external dose conversion factors from ICRP 51 with those from ICRP 74 for use in measurement of operational quantities with dosimeters. Descriptions of dose algorithms and dosimeter response characteristics, and field performance were updated to reflect changes in the neutron quality factors used in the measurement of operational quantities.

Rathbone, Bruce A.

2010-01-01T23:59:59.000Z

267

Height stabilization of GaSb/GaAs quantum dots by Al-rich capping  

SciTech Connect (OSTI)

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-09-01T23:59:59.000Z

268

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates  

SciTech Connect (OSTI)

The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

2013-05-07T23:59:59.000Z

269

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

270

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network [OSTI]

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

271

AlGaAs/GaAs photovoltaic converters for high power narrowband radiation  

SciTech Connect (OSTI)

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

2014-09-26T23:59:59.000Z

272

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

273

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

274

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes  

SciTech Connect (OSTI)

We report on the growth of low-defect thick films of AlN and AlGaN on trenched AlGaN/sapphire templates using migration enhanced lateral epitaxial overgrowth. Incoherent coalescence-related defects were alleviated by controlling the tilt angle of growth fronts and by allowing Al adatoms sufficient residence time to incorporate at the most energetically favorable lattice sites. Deep ultraviolet light emitting diode structures (310 nm) deposited over fully coalesced thick AlN films exhibited cw output power of 1.6 mW at 50 mA current with extrapolated lifetime in excess of 5000 hours. The results demonstrate substantial improvement in the device lifetime, primarily due to the reduced density of growth defects.

Jain, R.; Sun, W.; Yang, J.; Shatalov, M.; Hu, X.; Sattu, A.; Lunev, A.; Deng, J.; Shturm, I.; Bilenko, Y.; Gaska, R. [Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209 (United States); Shur, M. S. [Electrical Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy New York 12180 (United States)

2008-08-04T23:59:59.000Z

275

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

276

Point defect balance in epitaxial GaSb  

SciTech Connect (OSTI)

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

2014-08-25T23:59:59.000Z

277

MA AP MA MA MA AP AP MA MA MA AP AP  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and InterfacesAdministration -Lowell L. Wood, 1981Future4: WellsM.T.

278

CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} and CdTe PV solar cells  

SciTech Connect (OSTI)

Higher indium proportion in the first precursor was employed to eliminate pits in CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films prepared by two Se-vapor selenizations of metallic precursors. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films had large, faceted grains, and a near-optimum composition Cu:In:Ga:Se 24.25:22.21:4.40:49.14. Ga incorporated using a Cu-Ga(22 at. {percent}) alloy target was enhanced by optimizing the time-temperature profiles of selenizations. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} solar cells gave {ital V}{sub oc} of 451.8 mV, {ital J}{sub sc} of 34.5 mA, FF of 57.87{percent}, total area efficiency of 9.02{percent}. CdTe thin films were prepared by heat treatment of magnetron-sputtered elemental Cd/Te stacks. Formation of extraneous oxide phases was avoided by optimizing ambients, temperature, and CdCl{sub 2} treatment. CdTe solar cells gave maximum {ital V}{sub oc} of {approximately}600 mV, {ital J}{sub sc} of {approximately}5 mA.cm{sup {minus}2}, very low FF and efficiency probably due to blocking layer or junction away from CdS{backslash}CdTe interface. {copyright} {ital 1996 American Institute of Physics.}

Dhere, N.G. [Florida Solar Energy Center, 300 State Rd 401, Cape Canaveral, Florida 32920-4099 (United States)

1996-01-01T23:59:59.000Z

279

GaN-based light-emitting diode with textured indium tin oxide transparent layer coated with Al{sub 2}O{sub 3} powder  

SciTech Connect (OSTI)

Surface-textured InGaN/GaN light-emitting diodes (LEDs) coated with transparent Al{sub 2}O{sub 3} powder were fabricated by natural lithography combined with inductively coupled plasma etching. For surface texturing, 300 nm size Al{sub 2}O{sub 3} powder is used as an etching mask by simply coating the surface using a spin-coating process. Also, the powders are left on the surface after surface texturing to further increase extraction efficiency. At 20 mA, the light output power of the textured indium tin oxide (ITO) InGaN/GaN LEDs coated with the Al{sub 2}O{sub 3} powder is enhanced by {approx}112% compared with the conventional nontextured ITO LED. The enhanced light output power is attributed to the improved extraction efficiency resulting from an overall decrease in the total internal reflection due to the textured surface and the Al{sub 2}O{sub 3} powder coating.

Kim, T. K.; Kim, S. H.; Yang, S. S.; Son, J. K.; Lee, K. H.; Hong, Y. G.; Shim, K. H.; Yang, J. W.; Lim, K. Y.; Yang, G. M. [Department of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Bae, S. J. [Optowell Co., Ltd., 308, Semiconductor Physics Research Center, 664-14, Dukjin-Dong, Dukjin-Gu, Jeonju 561-756 (Korea, Republic of)

2009-04-20T23:59:59.000Z

280

Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes  

SciTech Connect (OSTI)

Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs.

Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wu, Kui; Sun, Bo; Zhang, Yonghui; Chen, Yu; Huo, Ziqiang; Hu, Qiang; Wang, Junxi; Zeng, Yiping; Li, Jinmin [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China); Lan, Ding [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080 (China)

2014-06-15T23:59:59.000Z

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281

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents [OSTI]

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

282

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

283

Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure  

SciTech Connect (OSTI)

Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

2014-03-21T23:59:59.000Z

284

THE CAPE ANN PLUTONIC SUITE: A FIELD TRIP FOR PETROLOGY CLASSES John B. Brady, Department of Geology, Smith College, Northampton, MA 01060  

E-Print Network [OSTI]

of Geology, Smith College, Northampton, MA 01060 John T. Cheney, Department of Geology, Amherst College

Brady, John B.

285

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

286

EVERETT L. REDMOND II Senior Director, Policy Development  

Office of Environmental Management (EM)

propulsion and power production - have produced immeasurable benefits for our society. Nuclear power plants aid compliance with the Clean Air Act of 1970, which set standards to...

287

EVERETT L. REDMOND II Senior Director, Policy Development  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Career Scientists'Montana.Program - LibbyofThisStatement Tuesday, September 25--

288

MA092 Geometria plana e analitica Comprimento da circunfer^encia -Area do circulo  

E-Print Network [OSTI]

MA092 ­ Geometria plana e anal´itica Comprimento da circunfer^encia - ´Area do c´irculo Francisco A) 51.758 voltas Francisco A. M. Gomes (UNICAMP - IMECC)MA092 ­ Geometria plana e anal´itica Setembro de´itica Setembro de 2014 5 / 14 ´Area do c´irculo C´irculo ´Area A ´area de um c´irculo de raio R ´e dada por AC

Gomes, Francisco A. M.

289

Audit Report: CR-MA-95-02 | Department of Energy  

Energy Savers [EERE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustionImprovement3--Logistical5/08 Attendance List from 12/05/08CR-MA-95-02 Audit Report: CR-MA-95-02

290

Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells  

SciTech Connect (OSTI)

In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-01-07T23:59:59.000Z

291

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

292

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

293

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

294

Maayamma Nannu Ragam: Nata Kuranji {28th Mela Janyam}  

E-Print Network [OSTI]

AnandA AnandA ambA (svara) mA ma ma ga sa *ni *dha *ni sa ri ga mA ma ma ga ma ni dha mA ma ma , ni dha ni sA* ri* ga* mA* ma* ga* ma* ri* sA* ni sa* sA* ni dha ma ma , ga sa *nI *dha *ni sa *dha *dha *pa *dha/06/syama-sastry-kriti-mayamma- nannu-raga.html) O My ("mA") Mother ("ammA") ("mAyammA")! O Mother ("amm

Kalyanaraman, Shivkumar

295

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S. NaturalA. Michael SchaalNovember 26,8,CoalThousandIL SiteMidAtl PANE MA

296

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

297

Wavelength limits for InGaN quantum wells on GaN  

SciTech Connect (OSTI)

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

2013-06-17T23:59:59.000Z

298

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

1992-01-01T23:59:59.000Z

299

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

1992-08-01T23:59:59.000Z

300

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces  

SciTech Connect (OSTI)

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-08-12T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots  

SciTech Connect (OSTI)

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-15T23:59:59.000Z

302

AlGaAs/GaAs quantum well infrared detectors and modulators  

E-Print Network [OSTI]

to the quantum well. This optical transition wavelength lies in the mid infrared region of the spectrum. To get a more realistic picture of the optical transition in a 1-D quantum well, the non-parabolicity of the conduction band of GaAs is taken... into consideration. Further it is seen that with the change in temperature and doping concentration the width and peak of the absorption curve also changes. Based on the above calculations and results an AIGaAs/GaAs quantum well infrared photodetector...

Dave, Digant Praful

1990-01-01T23:59:59.000Z

303

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

304

Pressure calibrations for cell filling Harvard-Smithsonian Center for Astrophysics, Cambridge, MA 02138  

E-Print Network [OSTI]

, Cambridge, MA 02138 (1/20/00) Purpose: To describe procedures useful in filling various gas sample cells to 77 K, and thus eas- ily condense xenon into the cell. Practically, this means that all the gas the gases in the cell are valid only for a binary gas mixture where one of the gases can be condensed (i

Walsworth, Ronald L.

305

MA et al.: SKETCH RETRIEVAL VIA STROKE FEATURES 1 Sketch Retrieval via Dense Stroke Features  

E-Print Network [OSTI]

MA et al.: SKETCH RETRIEVAL VIA STROKE FEATURES 1 Sketch Retrieval via Dense Stroke Features Chao search method. In this paper, we propose a representation scheme which takes sketch strokes into account with local features, thereby facilitat- ing efficient retrieval with codebooks. Stroke features are detected

Yang, Ming-Hsuan

306

En quoi Turing a-t-il chang ma vie de chercheur ?  

E-Print Network [OSTI]

1912-2012 ALAN TURING En quoi Turing a-t-il changé ma vie de chercheur ? PIERRE LESCANNE (LIP, CNRS scientifique génial, prolifique et polyvalent. Que se serait-il passé alors ? 1Les machines à computer d'Alan Turing, Bulletin de SPECIF n63 (avril 2010) #12;

van Tiggelen, Bart

307

M. M. Oppenheim Y. S. Dimant, Boston University, Center for Space Physics, Boston, MA, 02215, USA  

E-Print Network [OSTI]

M. M. Oppenheim Y. S. Dimant, Boston University, Center for Space Physics, Boston, MA, 02215, USA Corresponding author Email addresses: meerso@bu.edu (M. M. Oppenheim), dimant@bu.edu (Y. S. Dimant). Preprint and Oppenheim. This paper begins with a general discussion of E-region irregularity observa- tions, theory

Oppenheim, Meers

308

POLITICAL SCIeNCe (M.A. & Ph.D.) Executive Officer: Professor Joe Rollins  

E-Print Network [OSTI]

206 POLITICAL SCIeNCe (M.A. & Ph.D.) Executive Officer: Professor Joe Rollins The Graduate Center 365 Fifth Avenue New York, NY 10016 Email: PoliticalScience@gc.cuny.edu http://www.gc.cuny.edu/Political Richard Wolin n Susan Woodward n Ming Xia n Donald Zagoria n Burton Zwiebach the PrOgram Political Science

Dennehy, John

309

SCALE INSECTS in MA CRANBERRY Martha M. Sylvia and Anne L. Averill  

E-Print Network [OSTI]

SCALE INSECTS in MA CRANBERRY Martha M. Sylvia and Anne L. Averill June 3, 2014 Scale are a kind and updates as we learn more about these cranberry pests. If you think you have a possible infestation, bring on it to the Entomology Lab at the UMass Cranberry Station. Do you have circular areas of red vine or dead spots? If you

Massachusetts at Amherst, University of

310

Fabrication Technological Development of the Oxide Dispersion Strengthened Alloy MA957 for Fast Reactor Applications  

SciTech Connect (OSTI)

A significant amount of effort has been devoted to determining the properties and understanding the behavior of the alloy MA957 to define its potential usefulness as a cladding material in the fast breeder reactor program. The numerous characterization and fabrication studies that were conducted are documented in this report.

Hamilton, Margaret L.; Gelles, David S.; Lobsinger, Ralph J.; Johnson, Gerald D.; Brown, W. F.; Paxton, Michael M.; Puigh, Raymond J.; Eiholzer, Cheryl R.; Martinez, C.; Blotter, M. A.

2000-02-28T23:59:59.000Z

311

Nanocrystals for Solar Energy MaRIE--A Facility in the Making  

E-Print Network [OSTI]

alternative to fossil fuels. Such efforts at applying fundamental physics to sustainable energy are now's efforts to minimize environmental impacts. The new Center for Advanced Solar Photophysics, led by Victor behavior under extreme temperatures, pressures, and radiation environments. The data gathered with MaRIE's

312

Rapport sur ma mission au Kurdistan Iraqien effectue du 6 au 13 octobre 2008  

E-Print Network [OSTI]

Rapport sur ma mission au Kurdistan Iraqien effectuée du 6 au 13 octobre 2008 avec Mohammad une mission au Kurdistan Iraqien du lundi 6 au lundi 13 octobre 2008 avec Mohammad Eftekhari'Universitaires de la région autonome du Kurdistan début 2007. J'avais fait à cette occasion la connaissance du Dr

Waldschmidt, Michel

313

The Market Acceptance of Advanced Automotive Technologies (MA3T) Model  

E-Print Network [OSTI]

vehicles (PHEV), extended-range electric vehicle (EREV), battery electric vehicles (BEV) and fuel cell Vehicles by 2015 Using MA3T Model." The 26th International Battery, Hybrid and Fuel Cell Electric Vehicle: Energy Environment Safety Security Vehicle Technologies T he Market Acceptance of Advanced Automotive

314

Condensative Stream Query Language for Data Streams Lisha Ma1 Werner Nutt2 Hamish Taylor1  

E-Print Network [OSTI]

Condensative Stream Query Language for Data Streams Lisha Ma1 Werner Nutt2 Hamish Taylor1 1 School the answer to a similar non-aggregate query making query processing condensative. Cur- rent proposals for declarative query languages over data streams do not support such condensative pro- cessing. Nor is it yet

Taylor, Hamish

315

Condensing Effect of Palmitic Acid on DPPC in Mixed Langmuir Gang Ma and Heather C. Allen*  

E-Print Network [OSTI]

Condensing Effect of Palmitic Acid on DPPC in Mixed Langmuir Monolayers Gang Ma and Heather C in the liquid-expanded and condensed phases is explored. A condensing effect of PA on DPPC is observed with VSFG ordering of DPPC chains and causes DPPC to transition from the expanded phase into the condensed phase

316

Formblatt LM Ma Informatik Version Oktober 2012 Zuordnung von Lehrmodulen im Masterstudium Informatik  

E-Print Network [OSTI]

Formblatt LM Ma Informatik Version Oktober 2012 Zuordnung von Lehrmodulen im Masterstudium Komplexität Modul-Nr. Name (Kurzform) KP Note PR Programmierung LM 1 VI Verteilte Informationssysteme LM 2 PV Parallele und Vert. Systemarchitekturen LM 3 OC Organic Computing LM 4 IE Intelligente eingebettete Systeme

Lübeck, Universität zu

317

Formblatt LM Ma Informatik Version Mai 2010 Zuordnung von Lehrmodulen im Masterstudium Informatik  

E-Print Network [OSTI]

Formblatt LM Ma Informatik Version Mai 2010 Zuordnung von Lehrmodulen im Masterstudium Informatik-Nr.^+ KP LZF Note PR Programmierung LM 1 VI Verteilte Informationssysteme LM 2 PV Parallele und Vert. Systemarchitekturen LM 3 OC Organic Computing LM 4 IE Intelligente eingebettete Systeme Summe KP SB Signal- und

Lübeck, Universität zu

318

PHILOSOPHY (M.A. & Ph.D.) Executive Officer: Professor Iakovos Vasiliou  

E-Print Network [OSTI]

194 PHILOSOPHY (M.A. & Ph.D.) Executive Officer: Professor Iakovos Vasiliou The Graduate Center 365 Fifth Avenue New York, NY 10016 Email: Philosophy@gc.cuny.edu http://web.gc.cuny.edu/Philosophy/ facult Martin Tamny n Iakovos Vasiliou n Mary Bittman Wiseman the PrOgram The Graduate Program in Philosophy

Dennehy, John

319

Gravity Based Autonomous Calibration for Robot Manipulators Donghai Ma, John M. Hollerbach and Yangming Xu  

E-Print Network [OSTI]

Gravity Based Autonomous Calibration for Robot Manipulators Donghai Ma, John M. Hollerbach, the gravity torque exerted on the joint varies sinusoidally with rotation angle. By means of sinusoidal curve. The gravity vec- tor, expressed in the defined base coordinates, can also be found. Thereafter we determine

Hollerbach, John M.

320

Gravity waves in the arctic mesosphere during the MaCWAVE/MIDAS summer rocket program  

E-Print Network [OSTI]

with the mean state. Previous rocket campaigns addressing gravity wave dynam- ics included MAC/SINE, MAC/EPSILON [Thrane, 1990], and CADRE/MALTED [Fritts et al., 1997]. [3] The MaCWAVE/MIDAS campaign in July 2002 the Andøya Rocket Range in northern Norway with ground-based lidar and radar measurements from the nearby

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

AABBSSTTRRAACCTT MA, RUIQI. The Effect of In-Vehicle Automation and Reliability on Driver Situation  

E-Print Network [OSTI]

AABBSSTTRRAACCTT MA, RUIQI. The Effect of In-Vehicle Automation and Reliability on Driver Situation by automation and in- vehicle device use. Specifically, this study investigated the implications of adaptive; investigate the effect of varying reliability of in-vehicle automation (navigation aids) on driver SA

Kaber, David B.

322

Bibliography Anderson, J.R. (1983). Architecture of cognition. Cambridge, MA: Harvard  

E-Print Network [OSTI]

1 Bibliography Anderson, J.R. (1983). Architecture of cognition. Cambridge, MA: Harvard University and Computer Representations. Cambridge: Cambridge University Press. #12;2 Coelho, S. M., and Séré, M. (1998. diSessa, A. (2000). Changing minds: Computers, learning and literacy. MIT Press. Fauconnier, G. and M

Maryland at College Park, University of

323

Plastik schneidern Chemiker heute nach Ma: Sie haben Polymere zu versierten  

E-Print Network [OSTI]

Plastik schneidern Chemiker heute nach Ma�: Sie haben Polymere zu versierten Werkstoffen für vielfältige Anwendungen entwickelt, die längst mehr können als nur einer Tüte Halt geben. Polymere entstehen

324

WIND TURBINE SITING IN AN URBAN ENVIRONMENT: THE HULL, MA 660 KW TURBINE  

E-Print Network [OSTI]

1 WIND TURBINE SITING IN AN URBAN ENVIRONMENT: THE HULL, MA 660 KW TURBINE J. F. Manwell, J. G. Mc turbine at Windmill Point in Hull, Massachusetts represents a high point in the long history of wind, through the installation of a 40 kW Enertech machine in the 1980's to the installation of the new turbine

Massachusetts at Amherst, University of

325

Ma34a Prob. y Proc. Estocasticos 25 de Abril, 2006 Lista de Distribuciones  

E-Print Network [OSTI]

Ma34a Prob. y Proc. Estoc´asticos 25 de Abril, 2006 Lista de Distribuciones por Marcos Kiwi Modelos, i.e., X Poisson(), si pX(i) = 1 i! i e- , si i SX = N . Modelos absolutamente continuos

Rapaport, Iván

326

Ma34a Prob. y Proc. Estocasticos 22 de Mayo, 2006 Pauta Control No. 2  

E-Print Network [OSTI]

Ma34a Prob. y Proc. Estoc´asticos 22 de Mayo, 2006 Pauta Control No. 2 Prof. C´atedra: M. Kiwi Prof lanzamiento de monedas de los otros computadores, entonces un modelo de la etapa t de la situaci´on descrita de otras, un modelo para el procedimiento repetido en el tiempo queda dado por el experimento

Rapaport, Iván

327

Ma34a Prob. y Proc. Estocasticos 22 de Mayo, 2006 Control No. 2  

E-Print Network [OSTI]

Ma34a Prob. y Proc. Estocâ??asticos 22 de Mayo, 2006 Control No. 2 Prof. Câ??atedra: M. Kiwi Prof dicha etapa. (i).­ (1.5 pts) Proponga un modelo para la situaciâ??on descrita (i.e., espacio muestral

Rapaport, Iván

328

Ma34a Prob. y Proc. Estocasticos 22 de Mayo, 2006 Control No. 2  

E-Print Network [OSTI]

Ma34a Prob. y Proc. Estoc´asticos 22 de Mayo, 2006 Control No. 2 Prof. C´atedra: M. Kiwi Prof dicha etapa. (i).- (1.5 pts) Proponga un modelo para la situaci´on descrita (i.e., espacio muestral

Rapaport, Iván

329

Ma34a Prob. y Proc. Estocasticos 22 de Mayo, 2006 Pauta Control No. 2  

E-Print Network [OSTI]

Ma34a Prob. y Proc. Estocâ??asticos 22 de Mayo, 2006 Pauta Control No. 2 Prof. Câ??atedra: M. Kiwi Prof lanzamiento de monedas de los otros computadores, entonces un modelo de la etapa t de la situaciâ??on descrita de otras, un modelo para el procedimiento repetido en el tiempo queda dado por el experimento

Rapaport, Iván

330

Seismic Data Reconstruction via Matrix Yi Yang, Jianwei Ma and Stanley Osher  

E-Print Network [OSTI]

1 Seismic Data Reconstruction via Matrix Completion Yi Yang, Jianwei Ma and Stanley Osher Abstract In seismic processing, one goal is to recover missing traces when the data is sparsely and incom- pletelyFit) are discussed in this paper. The seismic data can then be recovered by the conversion of the completed matrix

Soatto, Stefano

331

Revision Rules in the Theory of Evidence Jianbing Ma, Weiru Liu  

E-Print Network [OSTI]

Revision Rules in the Theory of Evidence Jianbing Ma, Weiru Liu Queen's University of Belfast it and then a symmetric combination operation is still used. In the case of revision, the idea is to let prior knowledge be changed minimally to that effect. Although belief revision is already an important subfield of artificial

Liu, Weiru

332

Heliospheric current sheet inclinations at Venus and Earth G. Ma, K. Marubashi, and T. Maruyama  

E-Print Network [OSTI]

that the heliospheric current sheet inclination tends to be maintained during propagation of the solar wind from 0.72 AUHeliospheric current sheet inclinations at Venus and Earth G. Ma, K. Marubashi, and T. Maruyama / Revised: 16 September 1998 / Accepted: 22 October 1998 Abstract. We investigate the inclinations

Paris-Sud XI, Université de

333

Nano-mineralogy studies by advanced electron microscopy Chi Ma and George R. Rossman  

E-Print Network [OSTI]

Nano-mineralogy studies by advanced electron microscopy Chi Ma and George R. Rossman Division and planetary materials easier and faster down to nano-scales. Small but new minerals with important geological significance are being discovered. Nano-features are being discovered in many common minerals and gems, which

Ma, Chi

334

Indexing the Java API Using Source Code Homan Ma, Robert Amor, Ewan Tempero  

E-Print Network [OSTI]

Standard API. The rest of this paper is organised as follows. In the next section, we discuss related workIndexing the Java API Using Source Code Homan Ma, Robert Amor, Ewan Tempero Department of Computer code as the basis for the index. Keywords: Java Standard API, Software Repositories, Source Code

Amor, Robert

335

Company Name: Blue Cross Blue Shield of MA Web Site: www.bluecrossma.com  

E-Print Network [OSTI]

Company Name: Blue Cross Blue Shield of MA Web Site: www.bluecrossma.com Industry: Healthcare Brief Company Overview: Headquartered in Boston, Blue Cross Blue Shield of Massachusetts provides comprehensive-level position: Please visit www.bluecrossma.com/careers. With almost 3 million members, Blue Cross Blue Shield

New Hampshire, University of

336

John Marshall Particle Flow Calorimetry 1 J.S. Marshall, M.A. Thomson  

E-Print Network [OSTI]

John Marshall Particle Flow Calorimetry 1 J.S. Marshall, M.A. Thomson University of Cambridge #12;John Marshall Particle Flow Calorimetry 2 Overview 1. e+e- Physics and LC Jet Energy Requirements 2 at CLIC 8. CLIC Benchmark Physics Analyses 9. Summary #12;John Marshall Particle Flow Calorimetry 3 e

Glasgow, University of

337

Jimmy Chau , Thomas Little Multimedia Communications Laboratory, Electrical and Computer Engineering, Boston University, Boston, MA  

E-Print Network [OSTI]

, Electrical and Computer Engineering, Boston University, Boston, MA Current-Mirror Transmitter & Hybrid VLC Rich, and Michelle Nadeau. This work is supported by the NSF under cooperative agreement EEC-0812056 must be regulated for reliable operation, and · the large, regulated current needs to switch quickly

Little, Thomas

338

Blandford_2007_MonthlyUpdate_August.doc Data Update for Blandford, MA  

E-Print Network [OSTI]

Update_August.doc Data Summary Statistics A summary of the data during the reporting period are included in the following://www.ceere.org/rerl/rerl_resourcedata.html. Data Recovery All raw wind data are subjected to a series of tests and filters to identify dataBlandford_2007_MonthlyUpdate_August.doc Data Update for Blandford, MA August, 2007 Prepared

Massachusetts at Amherst, University of

339

Blandford_2008_MonthlyUpdate_May.doc Data Update for Blandford, MA  

E-Print Network [OSTI]

at http://www.ceere.org/rerl/rerl_resourcedata.html. #12;Data Summary Statistics A summary of the data://www.ceere.org/rerl/rerl_resourcedata.html. Data Recovery All raw wind data are subjected to a series of tests and filters to identify dataBlandford_2008_MonthlyUpdate_May.doc Data Update for Blandford, MA May, 2008 Prepared

Massachusetts at Amherst, University of

340

Blandford_2007_MonthlyUpdate_September.doc Data Update for Blandford, MA  

E-Print Network [OSTI]

Update_September.doc Data Summary Statistics A summary of the data during the reporting period are included in the following://www.ceere.org/rerl/rerl_resourcedata.html. Data Recovery All raw wind data are subjected to a series of tests and filters to identify dataBlandford_2007_MonthlyUpdate_September.doc Data Update for Blandford, MA September, 2007 Prepared

Massachusetts at Amherst, University of

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Blandford_2008_MonthlyUpdate_April.doc Data Update for Blandford, MA  

E-Print Network [OSTI]

at http://www.ceere.org/rerl/rerl_resourcedata.html. #12;Data Summary Statistics A summary of the data://www.ceere.org/rerl/rerl_resourcedata.html. Data Recovery All raw wind data are subjected to a series of tests and filters to identify dataBlandford_2008_MonthlyUpdate_April.doc Data Update for Blandford, MA April, 2008 Prepared

Massachusetts at Amherst, University of

342

Blandford_2008_MonthlyUpdate_July.doc Data Update for Blandford, MA  

E-Print Network [OSTI]

at http://www.ceere.org/rerl/rerl_resourcedata.html. #12;Data Summary Statistics A summary of the data://www.ceere.org/rerl/rerl_resourcedata.html. Data Recovery All raw wind data are subjected to a series of tests and filters to identify dataBlandford_2008_MonthlyUpdate_July.doc Data Update for Blandford, MA July, 2008 Prepared

Massachusetts at Amherst, University of

343

Blandford_2007_MonthlyUpdate_July.doc Data Update for Blandford, MA  

E-Print Network [OSTI]

Summary Statistics A summary of the data during the reporting period are included in the following table://www.ceere.org/rerl/rerl_resourcedata.html. Data Recovery All raw wind data are subjected to a series of tests and filters to identify dataBlandford_2007_MonthlyUpdate_July.doc Data Update for Blandford, MA July, 2007 Prepared

Massachusetts at Amherst, University of

344

Blandford_2008_MonthlyUpdate_June.doc Data Update for Blandford, MA  

E-Print Network [OSTI]

at http://www.ceere.org/rerl/rerl_resourcedata.html. #12;Data Summary Statistics A summary of the data://www.ceere.org/rerl/rerl_resourcedata.html. Data Recovery All raw wind data are subjected to a series of tests and filters to identify dataBlandford_2008_MonthlyUpdate_June.doc Data Update for Blandford, MA June, 2008 Prepared

Massachusetts at Amherst, University of

345

The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD  

E-Print Network [OSTI]

211Introduction to Engineering Computation · STAT310Probability and Statistics · STAT410Introduction263 Statistics The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD Course engineering, computational and applied mathematics, managerial studies, mathematics, political science

Richards-Kortum, Rebecca

346

Hybrid Process Algebra P.J.L. Cuijpers # M.A. Reniers  

E-Print Network [OSTI]

Hybrid Process Algebra P.J.L. Cuijpers # M.A. Reniers Eindhoven University of Technology (TU/e) Den Dolech 2 5600 MB Eindhoven, The Netherlands Abstract We develop an algebraic theory, called hybrid process algebra (HyPA), for the de­ scription and analysis of hybrid systems. HyPA is an extension

Cuijpers, Pieter

347

Hybrid Process Algebra P.J.L. Cuijpers M.A. Reniers  

E-Print Network [OSTI]

Hybrid Process Algebra P.J.L. Cuijpers M.A. Reniers Eindhoven University of Technology (TU/e) Den Dolech 2 5600 MB Eindhoven, The Netherlands Abstract We develop an algebraic theory, called hybrid process algebra (HyPA), for the de- scription and analysis of hybrid systems. HyPA is an extension

Cuijpers, Pieter

348

Tectonic and climatic controls on long-term silicate weathering in Asia since 5 Ma  

E-Print Network [OSTI]

Tectonic and climatic controls on long-term silicate weathering in Asia since 5 Ma Shiming Wan,1 of paleo-climate and pCO2, the history of long- term silicate weathering in the Himalaya and Tibetan Plateau (HTP) during the late Cenozoic remains unclear. We recon- struct 5 m.y. of silicate sedimentary

Clift, Peter

349

A polydisperse twofluid model for surf zone bubble simulation Gangfeng Ma,1  

E-Print Network [OSTI]

that the model correctly reproduces dynamic interactions between the liquid phase and the continuum breaking wave. Through the comparisons with experimental data, it is demonstrated that the model describes under breaking waves. Citation: Ma, G., F. Shi, and J. T. Kirby (2011), A polydisperse twofluid model

Kirby, James T.

350

SoMaS Employability Strategy The School of Mathematics and Statistics will  

E-Print Network [OSTI]

SoMaS Employability Strategy The School of Mathematics and Statistics will: 10. Develop for the School's degrees with Employment Experience Our success will be measured by: · An increase of students switching to degrees with Employment Experience 11. enable students to gain skills through

Martin, Stephen John

351

Wydzga, M.A., M.A. Hassan, J.G. Venditti, T. Dunne (2005), Can interlocked grains reduce the mobility of gravel bed rivers?, Eos Trans. AGU, 86(52), Fall Meet. Suppl., Abstract H53B-0462.  

E-Print Network [OSTI]

the mobility of gravel bed rivers?, Eos Trans. AGU, 86(52), Fall Meet. Suppl., Abstract H53B-0462. Can interlocked grains reduce the mobility of gravel bed rivers? M.A. Wydzga1 , M.A. Hassan2 , J.G. Venditti3 , T of Earth and Planetary Science, University of California, Berkeley, CA 94720 Channel stability of gravel

Venditti, Jeremy G.

2005-01-01T23:59:59.000Z

352

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

353

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

354

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network [OSTI]

information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

Hyman, Bruce Carl

1999-01-01T23:59:59.000Z

355

General Atomics (GA) | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsorGeneral Atomics (GA)

356

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:

357

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

358

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat  

E-Print Network [OSTI]

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

Shepelyansky, Dima

359

Third-order gas-liquid phase transition and the nature of Andrews critical Tian Ma and Shouhong Wang  

E-Print Network [OSTI]

Third-order gas-liquid phase transition and the nature of Andrews critical point Tian Ma-order gas-liquid phase transition and the nature of Andrews critical point Tian Ma1 and Shouhong Wang2 1 is to study the nature of the Andrews critical point in the gas-liquid transition in a physical

Wang, Shouhong

360

The Effectiveness of the Cause-MaP System in Teaching Interconnected Complex Earth Systems in a Texas Private School  

E-Print Network [OSTI]

........................................................................................................... 54 vii LIST OF FIGURES FIGURE Page 1 Exam question used by Clark et al. (2009) in conjunction with question 2 above... 1 Structured questions with example answers from step 2 of the Cause-MaP process(Clark et al., 2009). ................................ 8 2 Tabulation of the answers, from step 2 of the Cause-MaP process, into a structured argument table...

Forshee, Patricia 1987-

2012-12-12T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Broader source: Energy.gov (indexed) [DOE]

current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

362

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

363

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

" FL Water Law Regulated Riparianism "Heavy" Admin Water Law ? #12;Comprehensive Water Resource Study Supply a. Water Allocation ­ Withdrawal Permit Program b. Water Storage & Delivery c. Interbasin TransferThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

364

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

365

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures  

E-Print Network [OSTI]

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In

Luryi, Serge

366

MA Doping Analysis on Breeding Capability and Protected Plutonium Production of Large FBR  

SciTech Connect (OSTI)

Spent fuel from LWR can be seen as long-live waste if it is not recycled or as a 'new fuel' resource if it is recycled into the reactors. Uranium and plutonium have been used for 'new fuel' resources from LWR spent fuel as MOX fuel type which is loaded into thermal reactor or fast reactor types. Other actinides from the spent fuel such as neptunium, americium and curium as minor actinide (MA) are considered to be loaded into the reactors for specific purposes, recently. Those purposes such as for increasing protected plutonium production and breeding capability for protected plutonium as well as in the same time those amount of MA can be reduced to a small quantity as a burner or transmutation purpose. Some investigations and scientific approaches are performed in order to increase a material ''barrier'' in plutonium isotope composition by increasing the even mass number of plutonium isotope such as Pu-238, Pu-240 and Pu-242 as plutonium protected composition. Higher material barrier which related to intrinsic properties of plutonium isotopes with even mass number (Pu-238, Pu-240 and Pu-242), are recognized because of their intense decay heat (DH) and high spontaneous fission neutron (SFN) rates. Those even number mass of plutonium isotope contribute to some criteria of plutonium characterization which will be adopted for present study such as IAEA, Pellaud and Kessler criteria (IAEA, 1972; Pellaud, 2002; and Kessler, 2007). The present paper intends to evaluate the breeding capability as a fuel sustainability index of the reactors and to analyze the composition of protected plutonium production of large power reactor based on the FaCT FBR as reference (Ohki, et al., 2008). Three dimensional FBR core configuration has been adopted which is based on the core optimization calculation of SRAC-CITATION code as reactor core analysis and JENDL-3.3 is adopted for nuclear data library. Some MA doping materials are loaded into the blanket regions which can be considered as breeding region for protected plutonium production. Breeding capability of the reactor can be increased effectively by increasing MA doping rate while criticality condition of the reactor is reduced by doping MA. Adopting MA cycle is also effective to increase the isotopic Pu-238 production in plutonium vector composition for denaturing purpose of plutonium.

Permana, Sidik; Suzuki, Mitsutoshi; Kuno, Yusuke [Japan Atomic Energy Agency, Nuclear Non-proliferation Science and Technology Center, 2-4 Shirane Shirakata, Tokai-mura, Ibaraki, 319-1195 (Japan)

2010-06-22T23:59:59.000Z

367

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

368

Elastic properties of Pu metal and Pu-Ga alloys  

SciTech Connect (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

369

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

370

MA16010  

E-Print Network [OSTI]

TOTAL. 650. ACCOMMODATIONS FOR STUDENTS WITH DISABILITIES: If ... participate—your feedback is vital to maintaining and improving the quality of ... revised semester calendar or other circumstances beyond the instructor's control.

Richard B. Eden

2014-06-14T23:59:59.000Z

371

MA 13800  

E-Print Network [OSTI]

Gabe Smith; office: MATH B13; Mondays/Wednesdays 12:30-1:30; Lee Coduti; office: MATH B13; Mondays/Fridays 2:30-3:30; Renee Roames; office: MATH 808

372

MA 52700  

E-Print Network [OSTI]

The distance offering of this course originates from the West Lafayette campus, is offered through streaming video via ProEd, and may be made available at the ...

373

MA 13900  

E-Print Network [OSTI]

... for Lesson 21 · Worksheet for Lesson 23 · Worksheet for Lesson 31 Geometer's Sketchpad · Pyramid Project · link to find Geometer's Sketchpad videos ...

374

MA 15400  

E-Print Network [OSTI]

... Email Etiquette (Read before emailing); Syllabi; MWF Section · Online Section · Assignment Sheet · Calculator Policy · Schedule w/links to video lessons ...

375

MA 13900  

E-Print Network [OSTI]

... 2 for Lesson 22 · Worksheet 3 for Lesson 22 · Worksheet for Lesson 23 · Worksheet for Lesson 31 · Pyramid Project · Link to find Geometer's Sketchpad Videos ...

376

MA 166  

E-Print Network [OSTI]

2051115 stations. 2 AV screens. Video Lecture Cabinet. Computer Projection Capabilities. 20' Chalkboard. Audio Recording Capabiiities. Velce Ampilficatlon ...

377

MA 16600  

E-Print Network [OSTI]

Course Info. Syllabus (Ground Rules) · Assignment Sheet (Rev. 3/6) · Grading Scheme. Resources. Past Exam Archive · Supplemental Materials. Exam Info.

378

MA 26100  

E-Print Network [OSTI]

Course Info. Syllabus (Ground Rules) · Emergency Preparedness · Course Calendar · Assignment Sheet. Resources. Past Exam Archive; Including completed ...

379

MA 15300  

E-Print Network [OSTI]

PowerPoints, Video Lessons and Outlines · Supplemental Instruction Info · Tutoring/Assistance Opportunities · Chapter 1 of Textbook · Even Answers to Book ...

380

- MA 162  

E-Print Network [OSTI]

Sep 18, 2014 ... 3 AV screen. Video Lectern Cabinet. 30' Chalkboard. Audio Recording Capabilities. Vioice Ampiification. X - Wheelchair seating. lai?me- 73°F” ...

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

MA 527  

E-Print Network [OSTI]

The distance offering of this course originates from the West Lafayette campus, is offered through streaming video via ProEd, and may be made available at the ...

382

MA 262  

E-Print Network [OSTI]

It is of important interest in controls systems, electrical engineering, physics, nuclear engineering, etc. For example, suppose one determines the equations ...

383

MA 13700  

E-Print Network [OSTI]

Course Coordinator: Renee Roames; ph: 494-1929; office: MATH 808; email: rroames@purdue.edu; Instructor: Gabe Smith; email: smith522@math.purdue.

384

MA.2  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$ EGcG ENERGYELIkNATIONHEALXH:LTS PlanLlr* Lr LrMM'

385

Ma Philippine  

Office of Scientific and Technical Information (OSTI)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinan antagonist Journal Article: Crystal structureComposite--FORRemarksHEATINGI _ _++,JBUILDINGfor:o4--U-

386

MA 442  

E-Print Network [OSTI]

Topics covered may include a unified modern treatment of functions of several variables. ... ADA policies: please see our ADA Information page for more details.

387

MA 53000  

E-Print Network [OSTI]

... theorem; Taylor and Laurent series; residues; conformal mapping; special topics. ... ADA policies: please see our ADA Information page for more details.

388

MA 15800  

E-Print Network [OSTI]

Functions, Trigonometry, and Algebra of calculus topics designed to fully prepare ... ADA policies: please see our ADA Information page for more details.

389

MA 53200  

E-Print Network [OSTI]

... as well as an introduction to topics such as Gaussian processes, queues, epidemic ... ADA policies: please see our ADA Information page for more details.

390

MA 30100  

E-Print Network [OSTI]

Topics may include axioms for the real numbers, mathematical induction, formal ... ADA policies: please see our ADA Information page for more details.

391

MA 16200  

E-Print Network [OSTI]

ADA policies: please see our ADA Information page for more details. ... See the online course evaluation page for more information on how we collect course ...

392

MA 16010  

E-Print Network [OSTI]

Topics include trigonometric and exponential functions; limits and differentiation, rules of ... ADA policies: please see our ADA Information page for more details.

393

A novel synthetic analog of militarin, MA-1 induces mitochondrial dependent apoptosis by ROS generation in human lung cancer cells  

SciTech Connect (OSTI)

A synthetic Militarin analog-1[(2R,3R,4R,5R)-1,6-bis(4-(2,4,4-trimethylpentan-2-yl)phenoxy) hexane-2,3,4,5-tetraol] is a novel derivative of constituents from Cordyceps militaris, which has been used to treat a variety of chronic diseases including inflammation, diabetes, hyperglycemia and cancers. Here, we report for the first time the synthesis of Militarin analog-1 (MA-1) and the apoptotic mechanism of MA-1 against human lung cancer cell lines. Treatment with MA-1 significantly inhibited the viability of 3 human lung cancer cell lines. The inhibition of viability and growth in MA-1-treated A549 cells with an IC{sub 50} of 5 ?M were mediated through apoptosis induction, as demonstrated by an increase in DNA fragmentation, sub-G{sub 0}/G{sub 1}-DNA fraction, nuclear condensation, and phosphatidylserine exposure. The apoptotic cell death caused mitochondrial membrane permeabilization through regulation of expression of the Bcl-2 family proteins, leading to cytochrome c release in a time-dependent manner. Subsequently, the final stage of apoptosis, activation of caspase-9/-3 and cleavage of poly (ADP ribose) polymerase, was induced. Furthermore, A549 lung cancer cells were more responsive to MA-1 than a bronchial epithelial cell line (BEAS-2B), involving the rapid generation of reactive oxygen species (ROS), c-Jun N-terminal kinase (JNK) and p38 mitogen-activated protein kinase (MAPK) activation. The pharmacological inhibition of ROS generation and JNK/p38 MAPK exhibited attenuated DNA fragmentation in MA-1-induced apoptosis. Oral administration of MA-1 also retarded growth of A549 orthotopic xenografts. In conclusion, the present study indicates that the new synthetic derivative MA-1 triggers mitochondrial apoptosis through ROS generation and regulation of MAPKs and may be a potent therapeutic agent against human lung cancer. - Highlights: • We report a novel synthesized derivative, militarin analog-1 (MA-1). • MA-1-induced cancer cell death was triggered by the ROS generation through MAPKs. • The MA-1-induced cell death was also modulated by the mitochondria-mediated pathway. • The apoptotic cancer cell death by MA-1 was also exhibited in orthotopic xenografts. • Our findings suggest MA-1 as a clinically useful agent for human lung cancer.

Yoon, Deok Hyo; Lim, Mi-Hee [Department of Biochemistry, Kangwon National University, Chuncheon 200-701 (Korea, Republic of); Lee, Yu Ran [Department of Physiology, School of Medicine, Chungnam National University, Daejeon 301-747 (Korea, Republic of); Sung, Gi-Ho [Mushroom Research Division, National Institute of Horticultural and Herbal Science, Rural Development Administration, Suwon 404-707 (Korea, Republic of); Lee, Tae-Ho [R and D Center, Dong-A Pharmaceutical Co, Ltd, Yongin 446-905 (Korea, Republic of); Jeon, Byeong Hwa [Department of Physiology, School of Medicine, Chungnam National University, Daejeon 301-747 (Korea, Republic of); Cho, Jae Youl [Department of Genetic Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Song, Won O. [Department of Food Science and Human Nutrition, Michigan State University, East Lansing, MI 48824 (United States); Park, Haeil [College of Pharmacy, Kangwon National University, Chuncheon 200-701 (Korea, Republic of); Choi, Sunga, E-mail: sachoi@cnu.ac.kr [Department of Physiology, School of Medicine, Chungnam National University, Daejeon 301-747 (Korea, Republic of); Kim, Tae Woong, E-mail: tawkim@kangwon.ac.kr [Department of Biochemistry, Kangwon National University, Chuncheon 200-701 (Korea, Republic of)

2013-12-15T23:59:59.000Z

394

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach  

E-Print Network [OSTI]

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

Itoh, Tatsuo

395

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

396

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network [OSTI]

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

397

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

398

Fabrication of quantum point contacts by engraving GaAsAlGaAs heterostructures with a diamond tip  

E-Print Network [OSTI]

by hot-filament chemical vapor deposition of polycrystalline diamond onto a prepat- terned siliconFabrication of quantum point contacts by engraving GaAsÕAlGaAs heterostructures with a diamond tip for publication 17 July 2002 We use the all-diamond tip of an atomic force microscope for the direct engraving

Hohls, Frank

399

OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT  

E-Print Network [OSTI]

on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus

Honsberg, Christiana

400

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

402

Diffusion of a Ga adatom on the GaAs(001)c(44)heterodimer surface: A first principles study  

E-Print Network [OSTI]

Diffusion of a Ga adatom on the GaAs(001)c(4×4)heterodimer surface: A first principles study J Diffusion barriers Reconstruction Density functional calculations The adsorption and diffusion behavior functional theory (DFT) computations in the local density approxima- tion. Structural and bonding features

Khare, Sanjay V.

403

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields  

E-Print Network [OSTI]

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures with increasing external electric field, with the radiative component exhibiting weaker field dependence. © 2009 applied electric field in Ref. 12, the electric field dependent radiative recombination in particular has

Demir, Hilmi Volkan

404

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a)  

E-Print Network [OSTI]

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a) M. Patrini,1 G; accepted 5 May 2011; published online 20 June 2011) The effect of hydrogen irradiation on the optical for fiber optic communications. These promising results in view of the development of waveguides deserve

405

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

406

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network [OSTI]

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

407

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers  

E-Print Network [OSTI]

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

Wetzel, Christian M.

408

MaGe - a Geant4-based Monte Carlo framework for low-background experiments  

E-Print Network [OSTI]

A Monte Carlo framework, MaGe, has been developed based on the Geant4 simulation toolkit. Its purpose is to simulate physics processes in low-energy and low-background radiation detectors, specifically for the Majorana and Gerda $^{76}$Ge neutrinoless double-beta decay experiments. This jointly-developed tool is also used to verify the simulation of physics processes relevant to other low-background experiments in Geant4. The MaGe framework contains simulations of prototype experiments and test stands, and is easily extended to incorporate new geometries and configurations while still using the same verified physics processes, tunings, and code framework. This reduces duplication of efforts and improves the robustness of and confidence in the simulation output.

Yuen-Dat Chan; Jason A. Detwiler; Reyco Henning; Victor M. Gehman; Rob A. Johnson; David V. Jordan; Kareem Kazkaz; Markus Knapp; Kevin Kroninger; Daniel Lenz; Jing Liu; Xiang Liu; Michael G. Marino; Akbar Mokhtarani; Luciano Pandola; Alexis G. Schubert; Claudia Tomei

2008-02-06T23:59:59.000Z

409

On Larkin-Imry-Ma State of 3He-A in Aerogel  

E-Print Network [OSTI]

Superfluid 3He-A shares the properties of spin nematic and chiral orbital ferromagnet. Its order parameter is characterized by two vectors d and l. This doubly anisotropic superfluid, when it is confined in aerogel, represents the most interesting example of a system with continuous symmetry in the presence of random anisotropy disorder. We discuss the Larkin-Imry-Ma state, which is characterized by the short-range orientational order of the vector l, while the long-range orientational order is destroyed by the collective action of the randomly oriented aerogel strings. On the other hand, sufficiently large regular anisotropy produced either by the deformation of the aerogel or by applied superflow suppresses the Larkin-Imry-Ma effect leading to the uniform orientation of the vector l. This interplay of regular and random anisotropy allows us to study many different effects.

G. E. Volovik

2007-04-19T23:59:59.000Z

410

On Larkin-Imry-Ma State of 3He-A in Aerogel  

E-Print Network [OSTI]

Superfluid 3He-A shares the properties of spin nematic and chiral orbital ferromagnet. Its order parameter is characterized by two vectors d and l. This doubly anisotropic superfluid, when it is confined in aerogel, represents the most interesting example of a system with continuous symmetry in the presence of random anisotropy disorder. We discuss the Larkin-Imry-Ma state, which is characterized by the short-range orientational order of the vector l, while the long-range orientational order is destroyed by the collective action of the randomly oriented aerogel strings. On the other hand, sufficiently large regular anisotropy produced either by the deformation of the aerogel or by applied superflow destroys the Larkin-Imry-Ma effect leading to the uniform orientation of the vector l. This interplay of regular and random anisotropy allows us to study many different effects.

Volovik, G E

2007-01-01T23:59:59.000Z

411

On Larkin-Imry-Ma State of 3 He-A in Aerogel  

E-Print Network [OSTI]

Superfluid 3 He-A shares the properties of spin nematic and chiral orbital ferromagnet. Its order parameter is characterized by two vectors ˆ d and ˆ l. This doubly anisotropic superfluid, when it is confined in aerogel, represents the most interesting example of a system with continuous symmetry in the presence of random anisotropy disorder. We discuss the Larkin-Imry-Ma state, which is characterized by the short-range orientational order of the vector ˆ l, while the long-range orientational order is destroyed by the collective action of the randomly oriented aerogel strings. On the other hand, sufficiently large regular anisotropy produced either by the deformation of the aerogel or by applied superflow destroys the Larkin-Imry-Ma effect leading to the uniform orientation of the vector ˆ l. This interplay of regular and random anisotropy allows us to study many different effects. PACS numbers: 61.30.-v, 67.57.-z, 75.10.Nr. 1.

G. E. Volovik

412

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings  

SciTech Connect (OSTI)

The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-07-28T23:59:59.000Z

413

Single photon emission from site-controlled InGaN/GaN quantum dots  

SciTech Connect (OSTI)

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10?K.

Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2013-11-04T23:59:59.000Z

414

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

415

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

416

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

417

The crystal and magnetic structures of LaCa{sub 2}Fe{sub 3-x}M{sub x}O{sub 8} (M=Al, Ga, In)  

SciTech Connect (OSTI)

LaCa{sub 2}Fe{sub 3}O{sub 8} (A{sub 3}B{sub 3}O{sub 8}) is an example of a layered structure in that it consists of pairs of octahedral, perovskite-like layers alternating with a single tetrahedral layer. This work explores the doping of non-magnetic group 13 elements, M=Al, Ga and In, onto the B-site of LaCa{sub 2}Fe{sub 3-x}M{sub x}O{sub 8} as a function of x. The structural and magnetic effects are examined using a combination of neutron and X-ray diffraction. Solubility limits are established. It is found that for M=Ga the solubility limit occurs between x=1.0 and x=1.25, for the synthesis conditions used, while there is evidence for low (x<0.25) but non-zero substitution of Al. Structural refinements at x=1 suggest that Ga prefers neither the tetrahedral nor octahedral sites. The magnetic structure of LaCa{sub 2}Fe{sub 2}GaO{sub 8} has been examined using neutron diffraction at 3.2 K and room temperature. At low temperature the staggered moment per Fe{sup 3+} is 3.8(1){mu}{sub B} in LaCa{sub 2}Fe{sub 3}O{sub 8} and 4.8(1){mu}{sub B} in LaCa{sub 2}Fe{sub 2}GaO{sub 8}. The magnetic space group (P{sub 2b}2{sub 1} Prime ma Prime ) and moment direction (along c) does not appear to change with Ga substitution. - Graphical abstract: Solubility limits for group 13 elements in LaCa{sub 2}Fe{sub 3}O{sub 8}. Highlights: Black-Right-Pointing-Pointer Solubility limits for group 13 elements in LaCa{sub 2}Fe{sub 3}O{sub 8} are determined. Black-Right-Pointing-Pointer Evolution of the magnetic structure with temperature and doping is explored using neutron scattering. Black-Right-Pointing-Pointer The magnetic space group is quoted as P{sub 2b}2{sub 1}'ma' and the staggered moments are obtained for LaCa{sub 2}Fe{sub 3}O{sub 8} and LaCa{sub 2}Fe{sub 2}GaO{sub 8}.

Goossens, D.J., E-mail: goossens@rsc.anu.edu.au [Research School of Chemistry, Australian National University, Canberra 0200 (Australia); Henderson, L.S.F.; Trevena, S. [School of Engineering, Australian National University, Canberra 0200 (Australia)] [School of Engineering, Australian National University, Canberra 0200 (Australia); Hudspeth, J.M. [Research School of Physics and Engineering, Australian National University, Canberra 0200 (Australia)] [Research School of Physics and Engineering, Australian National University, Canberra 0200 (Australia); Avdeev, M.; Hester, J.R. [The Bragg Institute, Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW 2234 (Australia)] [The Bragg Institute, Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW 2234 (Australia)

2012-12-15T23:59:59.000Z

418

Ma thse en 2 minutes Sophie Tourret quipe Capp Dir : N. Peltier, M. Echenim  

E-Print Network [OSTI]

Quoi Comment Pourquoi Ma thèse en 2 minutes Sophie Tourret ­ équipe Capp Dir : N. Peltier, M 2 minutes Sophie Tourret ­ équipe Capp Dir : N. Peltier, M. Echenim #12;Génération d ­ équipe Capp Dir : N. Peltier, M. Echenim #12;Génération d'impliqués premiers en logique équationnelle

419

Model for Analysis of Energy Demand (MAED-2) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 -Energieprojekte GmbHMilo, Maine:Energy Information23.Energy Demand (MAED-2)

420

Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well  

SciTech Connect (OSTI)

The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.

Ramesh, V.; Kikuchi, A.; Kishino, K. [Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan); CREST, JST, Saitama 332-0012 (Japan); Funato, M.; Kawakami, Y. [CREST, JST, Saitama 332-0012 (Japan); Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

2010-06-15T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Blind Spots for neutralino Dark Matter in the MSSM with an intermediate m_A  

E-Print Network [OSTI]

We study the spin-independent neutralino Dark Matter scattering off heavy nuclei in the MSSM. We identify analytically the blind spots in direct detection for intermediate values of $m_A$. In the region where $\\mu$ and $M_{1,2}$ have opposite signs, there is not only a reduction of the lightest CP-even Higgs coupling to neutralinos, but also a destructive interference between the neutralino scattering through the exchange of the lightest CP-even Higgs and that through the exchange of the heaviest CP-even Higgs. At critical values of $m_A$, the tree-level contribution from the light Higgs exchange cancels the contribution from the heavy Higgs, so the scattering cross section vanishes. We denote these configurations as blind spots, since they provide a generalization of the ones previously discussed in the literature, which occur at very large values of $m_A$. We show that the generalized blind spots may occur in regions of parameter space that are consistent with the obtention of the proper neutralino relic density, and can be tested by non-standard Higgs boson searches and EWino searches at the LHC and future linear colliders.

Peisi Huang; Carlos E. M. Wagner

2014-07-01T23:59:59.000Z

422

Field dependent emission rates in radiation damaged GaAs  

SciTech Connect (OSTI)

We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

2014-07-07T23:59:59.000Z

423

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

SciTech Connect (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

424

Zero-Waste Events Harvard Office for Sustainability, 46 Blackstone Street, Cambridge, MA 02139 www.green.harvard.edu  

E-Print Network [OSTI]

Zero-Waste Events Harvard Office for Sustainability, 46 Blackstone Street, Cambridge, MA 02139 www.green-compostable materials (i.e. coffee stirrers, tea in foil bags, little creamers) 3. Determine all food and products

Wolfe, Patrick J.

425

Identification of chemical sedimentary protoliths using iron isotopes in the N3750 Ma Nuvvuagittuq supracrustal belt, Canada  

E-Print Network [OSTI]

Identification of chemical sedimentary protoliths using iron isotopes in the N3750 Ma Nuvvuagittuq partly homogenized Fe isotopes. Variable Fe isotope compositions of bulk quartz­magnetite rocks

Mojzsis, Stephen J.

426

W.A.MOZART : Quintette en sol mineur, K516 Allegro -Menuetto -Adagio ma non troppo-Adagio-Allegro  

E-Print Network [OSTI]

W.A.MOZART : Quintette en sol mineur, K516 Allegro - Menuetto - Adagio ma non troppo- Adagio-Allegro, donne une impression d' immobilité désespérante. Et c' est la libération: un Allegro joyeux et simple

Mazliak, Laurent

427

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

428

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs  

SciTech Connect (OSTI)

The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

2013-11-15T23:59:59.000Z

429

Electrical spin injection using GaCrN in a GaN based spin light emitting diode  

SciTech Connect (OSTI)

We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

Banerjee, D.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai 400076 (India); Adari, R.; Sankaranarayan, S.; Kumar, A. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)] [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S. [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)] [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2013-12-09T23:59:59.000Z

430

Beta-decay branching ratios of 62Ga  

E-Print Network [OSTI]

Beta-decay branching ratios of 62Ga have been measured at the IGISOL facility of the Accelerator Laboratory of the University of Jyvaskyla. 62Ga is one of the heavier Tz = 0, 0+ -> 0+ beta-emitting nuclides used to determine the vector coupling constant of the weak interaction and the Vud quark-mixing matrix element. For part of the experimental studies presented here, the JYFLTRAP facility has been employed to prepare isotopically pure beams of 62Ga. The branching ratio obtained, BR= 99.893(24)%, for the super-allowed branch is in agreement with previous measurements and allows to determine the ft value and the universal Ft value for the super-allowed beta decay of 62Ga.

A. Bey; B. Blank; G. Canchel; C. Dossat; J. Giovinazzo; I. Matea; V. Elomaa; T. Eronen; U. Hager; M. Hakala; A. Jokinen; A. Kankainen; I. Moore; H. Penttila; S. Rinta-Antila; A. Saastamoinen; T. Sonoda; J. Aysto; N. Adimi; G. De France; J. C. Thomas; G. Voltolini; T. Chaventré

2008-04-17T23:59:59.000Z

431

Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot  

SciTech Connect (OSTI)

In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

Emre Kavruk, Ahmet, E-mail: aekavruk@selcuk.edu.tr, E-mail: aekavruk@gmail.com; Koc, Fatih [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Sahin, Mehmet, E-mail: mehmet.sahin@agu.edu.tr, E-mail: mehsahin@gmail.com [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Department of Material Sciences and Nanotechnology Engineering, Abdullah Gul University, Kayseri (Turkey)

2013-11-14T23:59:59.000Z

432

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

433

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

434

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

435

Emploi du temps Licence de Mathmatiques semestre 6 MA= parcours maths approfondies M= parcours maths MI= parcours math-info ( groupe A en LI2)  

E-Print Network [OSTI]

M= parcours maths MI= parcours math-info ( groupe A en LI2) 08h00-09h30 09h45-11h15 11h30-13h00 13h15-14h45 15h00-16h30 16h45-18h15 lundi MA MA M Anglais* M MI TP Programmation C PV202 MI mardi MA Anglais MA M TD Histoire des Maths M 3.2 M MI TP Projet Scientifique PV214 MI mercredi MA TD Variable

Parusinski, Adam

436

Anti-phase domains in cubic GaN  

SciTech Connect (OSTI)

The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {l_brace}111{r_brace} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, {mu}-Raman and cathodoluminescence spectroscopy.

Maria Kemper, Ricarda; Schupp, Thorsten; Haeberlen, Maik; Lindner, Joerg; Josef As, Donat [University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn (Germany); Niendorf, Thomas; Maier, Hans-Juergen [University of Paderborn, Lehrstuhl fuer Werkstoffkunde, Pohlweg 47-49, D-33098 Paderborn (Germany); Dempewolf, Anja; Bertram, Frank; Christen, Juergen [University of Magdeburg, Institut fuer Festkoerperphysik, P.O. Box 4120, D-39016 Magdeburg (Germany); Kirste, Ronny; Hoffmann, Axel [Technische Universitaet Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin (Germany)

2011-12-15T23:59:59.000Z

437

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network [OSTI]

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

438

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas  

SciTech Connect (OSTI)

Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

2013-12-23T23:59:59.000Z

439

An Analysis of Wind Power Development in the Town of Hull, MA  

SciTech Connect (OSTI)

Over the past three decades the Town of Hull, MA has solidified its place in U.S. wind energy history through its leadership in community-based generation. This is illustrated by its commissioning of the first commercial-scale wind turbine on the Atlantic coastline, the first suburban-sited turbine in the continental United States, pursuit of community-based offshore wind, and its push toward creating an energy independent community. The town's history and demographics are briefly outlined, followed by experience in projects to provide wind power, including pre-construction and feasibility efforts, financial aspects, and market/industry factors.

Adams, Christopher

2013-06-30T23:59:59.000Z

440

DOE - Office of Legacy Management -- E B Badger - MA 0-01  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou are here Home »HillNY 28DorrE B Badger - MA

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441

Epitaxial growth of Cu,,In,Ga...Se2 on GaAs,,110... and A. Rockett  

E-Print Network [OSTI]

. INTRODUCTION The Cu(In, Ga)Se2 CIGS absorber layer in a recent record-efficiency CIGS solar cell1 has a 220.13 Commercially supplied ``epi-ready'' liquid- encapsulated Czo

Rockett, Angus

442

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network [OSTI]

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

443

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces  

SciTech Connect (OSTI)

We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

2014-11-03T23:59:59.000Z

444

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk  

SciTech Connect (OSTI)

Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

2014-11-07T23:59:59.000Z

445

The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa  

SciTech Connect (OSTI)

We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

Özduran, Mustafa [Ahi Evran Üniversitesi Fen Edebiyat Fakültesi Fizik Bölümü, K?r?ehir (Turkey); Turgut, Kemal [Yüksek Lisans Ö?rencisi, K?r?ehir (Turkey); Arikan, Nihat [Ahi Evran Üniversitesi E?itim Fakültesi ?lkö?retim Bölümü, K?r?ehir (Turkey); ?yigör, Ahmet; Candan, Abdullah [Ahi Evran Üniversitesi Merkezi Ara?t?rma Laboratuvar?, K?r?ehir (Turkey)

2014-10-06T23:59:59.000Z

446

Reduced lattice temperature high-speed operation of pseudomorphic InGaAdGaAs field-effect transistors  

E-Print Network [OSTI]

,um GaAs buffer, 170 A Ino.zGao,sAs strained channel, 50 A undoped Ale,,,Ga,,,As undoped spacer, S dimensions of 0.25 x 200 pm and 0.5 X 200 pm with a source-drain spacing of 2 ,um. The MODFETs have gate dimensions of 0.35~ 100 pm and 0.47X 100 pm with a source-drain spacing of 1 ,um. The MISFETs have

Kolodzey, James

447

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

448

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

449

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

450

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells  

SciTech Connect (OSTI)

We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2014-03-21T23:59:59.000Z

451

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect (OSTI)

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

452

Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment  

SciTech Connect (OSTI)

The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2014-10-07T23:59:59.000Z

453

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence  

SciTech Connect (OSTI)

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany); Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas [Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

2014-07-21T23:59:59.000Z

454

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

455

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect (OSTI)

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

456

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

457

Pulsed laser annealing of Be-implanted GaN  

SciTech Connect (OSTI)

Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

Wang, H.T.; Tan, L.S.; Chor, E.F. [Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2005-11-01T23:59:59.000Z

458

GaAs-based high temperature electrically pumped polariton laser  

SciTech Connect (OSTI)

Strong coupling effects and polariton lasing are observed at 155?K with an edge-emitting GaAs-based microcavity diode with a single Al{sub 0.31}Ga{sub 0.69}As/Al{sub 0.41}Ga{sub 0.59}As quantum well as the emitter. The threshold for polariton lasing is observed at 90?A/cm{sup 2}, accompanied by a reduction of the emission linewidth to 0.85?meV and a blueshift of the emission wavelength by 0.89?meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.

Baten, Md Zunaid; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu; Frost, Thomas; Deshpande, Saniya; Das, Ayan [Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lubyshev, Dimitri; Fastenau, Joel M.; Liu, Amy W. K. [IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 (United States)

2014-06-09T23:59:59.000Z

459

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

460

Friction Stir Welding Of Ma957 Oxide Dispersion Strengthened Ferritic Steel  

SciTech Connect (OSTI)

A 1-in. (25.4 mm) diameter yttria-dispersion-strengthened MA957 ferritic steel alloy tube with a 0.125" (3.18 mm) wall thickness was successfully plasticized by friction stir welding. The pin tool was a W-Re tool with 0.125" (3.17 mm) diameter tip. It showed no discernable wear for the total 12" (305 mm) of weld. Weld conditions were 1000 and 1400 RPM, 4 in/min (101 mm/min), with and without preheating to 135ºC. Metallographic analysis of the post friction-stir welded material showed a decrease in material hardness to 225±22 HV compared to the parent material at 373±21 HV. All weld conditions produced plasticization; however, improved plasticization was observed for preheated samples

Howard, Stanley M.; Jasthi, Bharat K.; Arbegast, William J.; Grant, Glenn J.; Koduri, Santhosh K.; Herling, Darrell R.; Gelles, David S.

2005-04-02T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
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461

Ion-induced swelling of ODS ferritic alloy MA957 tubing to 500 dpa  

SciTech Connect (OSTI)

In order to study the potential swelling behavior of the ODS ferritic alloy MA957 at very high dpa levels, specimens were prepared from pressurized tubes that were unirradiated archives of tubes previously irradiated in FFTF to doses as high at 110 dpa. These unirradiated specimens were irradiated with 1.8 MeV Cr+ ions to doses ranging from 100 to 500 dpa and examined by transmission electron microscopy. No coinjection of helium or hydrogen was employed. It was shown that compared to several ferritic/martensitic steels irradiated in the same facility, these tubes were rather resistant to void swelling, reaching a maximum value of only 4.5% at 500 dpa and 450°C. In this fine-grained material, the distribution of swelling was strongly influenced by the presence of void denuded zones along the grain boundaries.

Toloczko, Mychailo B.; Garner, F. A.; Voyevodin, V.; Bryk, V. V.; Borodin, O. V.; Melnichenko, V. V.; Kalchenko, A. S.

2014-10-11T23:59:59.000Z

462

Effect of active layer thickness on differential quantum efficiency of 1. 3 and 1. 55. mu. m InGaAsP injection lasers  

SciTech Connect (OSTI)

The dependence of differential quantum efficiency (eta/sub d/) on active layer thickness (d) for 1.3 and 1.55 ..mu..m InGaAsP buried crescent (BC) injection lasers has been measured. A comparison of the results shows that eta/sub d/ for 1.55 ..mu..m lasers increases more rapidly with decreasing d than eta/sub d/ for 1.3 ..mu..m lasers. The significantly different dependence of eta/sub d/ on d in BC lasers suggests that the optical absorption in the active region of InGaAsP lasers is strongly wavelength dependent. This gives the important practical conclusion that the eta/sub d/ for 1.55 ..mu..m lasers can be significantly improved by reducing d, whereas the eta/sub d/ for 1.3 ..mu..m lasers can only be slightly improved by reducing d. As a result of eta/sub d/ vs d investigation, we have obtained high performance 1.3 and 1.55 ..mu..m BC lasers which exhibit threshold currents as low as 9 mA at 25 /sup 0/C, high-temperature operation (up to 100 /sup 0/C), and eta/sub d/ over 65% (1.3 ..mu..m) and 45% (1.55 ..mu..m).

Cheng, W.H.; Su, C.B.; Renner, D.

1987-07-06T23:59:59.000Z

463

Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography  

SciTech Connect (OSTI)

The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-07-07T23:59:59.000Z

464

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

465

AlP/GaP distributed Bragg reflectors  

SciTech Connect (OSTI)

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

466

Graphene/GaN diodes for ultraviolet and visible photodetectors  

SciTech Connect (OSTI)

The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

2014-08-18T23:59:59.000Z

467

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

468

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

469

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect (OSTI)

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

470

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

471

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network [OSTI]

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

472

High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular-beam epitaxy  

SciTech Connect (OSTI)

Double pulse doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors have been grown by molecular-beam epitaxy on GaAs substrates. Hall mobilities in excess of 7100 cm{sup 2}/V s at 300 K and 25000 cm{sup 2}/V s at 77 K are obtained with a sheet density of 3 x 10{sup 12} cm{sup {minus}2}. Photoluminescence measurements indicate that two electronic subbands are occupied, and the subband energies are determined. The doping pulses are resolved in secondary ion mass spectrometry measurements. Using a double recess process, transistors have been fabricated that have produced state of the art microwave performance. At 10 GHz a 1.2 mm device has simultaneously achieved a power added efficiency of 70%, output power of 0.97 W, and gain of 10 dB. 17 refs., 5 figs., 1 tab.

Hoke, W.E.; Lyman, P.S.; Labossier, W.H.; Brierley, S.K.; Hendriks, H.T.; Shanfield, S.R.; Aucoin, L.M.; Kazior, T.E. [Raytheon Research Division, Lexington, MA (United States)] [Raytheon Research Division, Lexington, MA (United States)

1992-05-01T23:59:59.000Z

473

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect (OSTI)

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

474

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

475

Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence  

SciTech Connect (OSTI)

We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.

Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Carraro, S.; Meneghesso, G.; Trivellin, N.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy)] [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Mura, G. [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy)] [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy); Rossi, F.; Salviati, G. [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy)] [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Holc, K.; Weig, T.; Wagner, J. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany)] [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); Schade, L.; Karunakaran, M. A. [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)] [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany); Schwarz, U. T. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany) [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)

2013-12-02T23:59:59.000Z

476

Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells  

SciTech Connect (OSTI)

We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

Edmunds, C.; Malis, O., E-mail: omalis@purdue.edu [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Shao, J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Shirazi-HD, M. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, M. J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2014-07-14T23:59:59.000Z

477

Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes  

SciTech Connect (OSTI)

The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

2014-10-27T23:59:59.000Z

478

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

479

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect (OSTI)

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

480

1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE/HRL Labs; Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

2015-04-01T23:59:59.000Z

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481

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network [OSTI]

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

482

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

483

Hexagonal Growth Spirals on GaN Grown by Molecular Beam Epitaxy: Kinetics vs Thermodynamics  

E-Print Network [OSTI]

prepared, Ga-polar GaN(0001) templates. The surface morphology was studied using reflection high-energy-edge energy of 0.26 eV/Ã?. They suggest that local conditions at step edges dominate the growth. 1 conducted ex situ using AFM. Desorption mass spectrometry (DMS) was used to measure the GaN growth rate. Our

Cohen, Philip I.

484

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network [OSTI]

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

485

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network [OSTI]

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

486

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network [OSTI]

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

487

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

488

Properties of H, O and C in GaN  

SciTech Connect (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

489

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network [OSTI]

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

490

Ohmic contacts to p-type GaP  

E-Print Network [OSTI]

thickness used in this scheme. The samples were annealed for I @n at temperatures ranging from 3 5 0 to 4 5 0 'C. Lower values of the contact resistivity than those of the Si/Pd/Zn/Pd/p-GaP scheme were achieved by depositing an Aluminum layer on the top...

Jorge Estevez, Humberto Angel

1996-01-01T23:59:59.000Z

491

Gallium Arsenide (GaAs) EDWARD D. PALIK  

E-Print Network [OSTI]

constants of pure (semi-insulating) GaAs are derived from a number of papers including the far-infrared at. [4]; the near-IR work of Pikhtin and Yas'kov [5]; the calorim- etry work of Christensen et al. [6 reflection work of Philipp and Ehrenreich [9]; and the synchrotron transmission work of Cardona et al. [10

Pulfrey, David L.

492

Theory of weak localization in ferromagnetic (Ga,Mn)As  

E-Print Network [OSTI]

We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

2009-01-01T23:59:59.000Z

493

Response of GaAs to fast intense laser pulses  

E-Print Network [OSTI]

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

494

Recombination in Low-Bandgap InGaAs  

SciTech Connect (OSTI)

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

495

Ballistic thermal point contacts made of GaAs nanopillars  

SciTech Connect (OSTI)

We measure the thermal conductance of GaAs pillars that are only a few nanometers long. Our observations can be understood with a simple model, in which the pillars constitute thermal point contacts between 3D phonon reservoirs. Moreover, first measurements of the electronic transport through these pillars are presented.

Bartsch, Th.; Wetzel, A.; Sonnenberg, D.; Schmidt, M.; Heyn, Ch.; Hansen, W. [Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

2013-12-04T23:59:59.000Z

496

GA Tech Campus Emergency Response Team STANDARD OPERATING PROCEDURE  

E-Print Network [OSTI]

GA Tech Campus Emergency Response Team GT-CERT STANDARD OPERATING PROCEDURE 09/29/2010 #12;2 Table as a condition for the appointment and continuing maintenance of membership. GT-CERT members operate for and to respond to emergency/disaster situations. 2.0 Purpose To establish procedures for the activation

497

High-quality InP on GaAs  

E-Print Network [OSTI]

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

498

Laboratory Safety 46 Blackstone Street, Cambridge, MA 02139 | T: 617.496.3797 | F: 617.496.5509  

E-Print Network [OSTI]

Aerosol-proof rotors and safety cups for centrifuges Other safety equipment 8 Safe work Practices and PPE of pertinent federal and state government regulations, information about safe work practices, safety equipmentLaboratory Safety 46 Blackstone Street, Cambridge, MA 02139 | T: 617.496.3797 | F: 617.496.5509 www

499

TOWARDS MANAGING THE RISKS OF DATA MISUSE FOR SPATIAL DATACUBES M-A. Levesque a,b  

E-Print Network [OSTI]

TOWARDS MANAGING THE RISKS OF DATA MISUSE FOR SPATIAL DATACUBES M-A. Levesque a,b , Y. Bédard a support, Spatial OLAP, Spatial data quality, Warnings, Legal, Misuse, Risk ABSTRACT: Over the years, the mass consumption of spatial data caused several concerns in the geomatics community about the risk

500

Character of the diatom assemblage spanning a depositional transition in the Eastern Equatorial Pacific Ocean at 6.6 Ma  

E-Print Network [OSTI]

Approximately 6.6 million years ago in the Eastern Equatorial Pacific a large increase in biogenic mass accumulation rates (MAR?s) occurred. This increased level of biogenic mass accumulation persisted until about 4.4 Ma at which time levels...

Brookshire, Brian Neville, Jr.

2005-02-17T23:59:59.000Z