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Sample records for ga everett ma

  1. ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY M.A. Contreras, 2

    E-Print Network [OSTI]

    Sites, James R.

    ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY 1 M.A. Contreras, 2 T. Nakada, 2 M analysis between this type of solar cell and the slightly more efficient ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell for conversion efficiency above 20% in thin-film polycrystalline solar cells. It quantifies the gains in current

  2. Everett, MA Liquefied Natural Gas Total Imports (Million Cubic Feet)

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)DecadeYear Jan Feb Mar Apr May Jun2003 Detailed Tablesof19982,537Total

  3. EVERETT L. REDMOND II Senior Director, Policy Development

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum Based|DepartmentStatementofApril 25,EV Everywhere andEVERETT L. REDMOND II

  4. The End of the Many-Worlds? (or Could we save Everett's interpretation)

    E-Print Network [OSTI]

    A. Drezet

    2015-03-03

    This is a manuscript to be published as a book chapter. The text summarizes some of my critics concerning Everett's theory as seen from the perspective of a Bohmian. This is the second draft and comments are still welcome.

  5. Everett, MA Liquefied Natural Gas Imports From Yemen (Million Cubic Feet)

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)DecadeYear Jan Feb Mar Apr May Jun2003 Detailed Tablesof19982,537

  6. Everett, MA Natural Gas LNG Imports (Price) From Yemen (Dollars per

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)DecadeYear Jan Feb Mar Apr May Jun2003 Detailed

  7. Everett, MA Natural Gas LNG Imports (Price) From Yemen (Dollars per

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)DecadeYear Jan Feb Mar Apr May Jun2003 DetailedThousand Cubic Feet) Year Jan

  8. Everett, MA Natural Gas Liquefied Natural Gas Imports from Trinidad and

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)DecadeYear Jan Feb Mar Apr May Jun2003 DetailedThousand Cubic Feet) Year

  9. Price of Everett, MA Liquefied Natural Gas Total Imports (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home PageMonthly","10/2015"4,"Ames5 Tables July 1996 Energy Information Administration Office of Coal, Nuclear,DecadeYearby the PriceAlaska NaturalCubic(Dollars per

  10. Price of Everett, MA Liquefied Natural Gas Total Imports (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home PageMonthly","10/2015"4,"Ames5 Tables July 1996 Energy Information Administration Office of Coal, Nuclear,DecadeYearby the PriceAlaska NaturalCubic(Dollars perThousand

  11. Price of Everett, MA Natural Gas LNG Imports from Algeria (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home PageMonthly","10/2015"4,"Ames5 Tables July 1996 Energy Information Administration Office of Coal, Nuclear,DecadeYearby the PriceAlaska NaturalCubic(Dollars

  12. Price of Everett, MA Natural Gas LNG Imports from Australia (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home PageMonthly","10/2015"4,"Ames5 Tables July 1996 Energy Information Administration Office of Coal, Nuclear,DecadeYearby the PriceAlaska NaturalCubic(DollarsThousand Cubic

  13. Price of Everett, MA Natural Gas LNG Imports from Egypt (Nominal Dollars

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home PageMonthly","10/2015"4,"Ames5 Tables July 1996 Energy Information Administration Office of Coal, Nuclear,DecadeYearby the PriceAlaska NaturalCubic(DollarsThousand Cubicper

  14. Price of Everett, MA Natural Gas LNG Imports from Trinidad and Tobago

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home PageMonthly","10/2015"4,"Ames5 Tables July 1996 Energy Information Administration Office of Coal, Nuclear,DecadeYearby the PriceAlaska NaturalCubic(DollarsThousand

  15. Price of Everett, MA Natural Gas LNG Imports from Trinidad and Tobago

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home PageMonthly","10/2015"4,"Ames5 Tables July 1996 Energy Information Administration Office of Coal, Nuclear,DecadeYearby the PriceAlaska NaturalCubic(DollarsThousand(Dollars

  16. The Everett-Wheeler interpretation and the open future

    E-Print Network [OSTI]

    Anthony Sudbery

    2010-09-20

    I discuss the meaning of probability in the Everett-Wheeler interpretation of quantum mechanics, together with the problem of defining histories. To resolve these, I propose an understanding of probability arising from a form of temporal logic: the probability of a future-tense proposition is identified with its truth value in a many-valued and context-dependent logic. In short, probability is degree of truth. These ideas appear to be new (though I expect correction on this), but they are natural and intuitive, and relate to traditional naive ideas of time and chance. Indeed, I argue that Everettian quantum mechanics is the only form of scientific theory that truly incorporates the perception that the future is open.

  17. MA 30400

    E-Print Network [OSTI]

    $author.value

    Same description as MA 303 except that material on the qualitative behavior of solutions to nonlinear systems is substituted for material on Laplace transforms ...

  18. MA 166

    E-Print Network [OSTI]

    $author.value

    MA 166, Spring 2005. Course Description. Course Materials. Section, Type, Title, Author. Important Notes. ADA policies: please see our ADA Information page ...

  19. MA 266

    E-Print Network [OSTI]

    Page 1. MA 266. Final Exam December 16, 2003. All INSTRUCTORS. 7:00 p.m. — 9:00 p.m.. LAMBERT FLDHS. Page 2.

  20. MA 151

    E-Print Network [OSTI]

    Page 1. MA 151. Final Exam December 17, 2003. ALL INSTRUCTORS. 1:00 pm. — 3:00 pm. LAMBERT FLDHS. Page 2.

  1. MA 224

    E-Print Network [OSTI]

    Page 1. MA 224. Final Exam December 19, 2003 3:20 pm. — 5:20 pm. ALL INSTRUCTORS LAMBERT FLDHS. Page 2.

  2. MA 265

    E-Print Network [OSTI]

    Page 1. MA 265. Final Exam December 17, 2003 10:20 am. - 12:20 pm. All INSTRUCTORS LAMBERT FLDHS. Page 2.

  3. MA AP MA MA MA AP AP MA MA MA AP AP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousandReport) | SciTech ConnectFuture |0396 Some Comments onAP MA

  4. MA 261

    E-Print Network [OSTI]

    MA 261. Final Exam December 19, 2003. All INSTRUCTORS. 1:00 p. m. — 3:00 pm. LAMBERT FLDHS. Page 2. 3&4. .>ua 50.3.0 - m?ziu?w 2508: a 29:38.03 88.

  5. A NEW ROBOT DESIGN TO PASSIVELY DAMP FLEXIBLE ROBOTIC ARMS Louis J. Everett

    E-Print Network [OSTI]

    Everett, Louis J.

    A NEW ROBOT DESIGN TO PASSIVELY DAMP FLEXIBLE ROBOTIC ARMS Louis J. Everett Mechanical and Industrial Engineering University of Texas El Paso USA Marc Compere Mechanical Engineering Department with this design. First, long reach robot arms are inherently prone to vibration. Second, during vibration

  6. Quantum Structures of a Model-Universe: An Inconsistency with Everett Interpretation of Quantum Mechanics

    E-Print Network [OSTI]

    J. Jeknic-Dugic; M. Dugic; A. Francom

    2013-08-13

    We observe a Quantum Brownian Motion (QBM) Model Universe in conjunction with recently established Entanglement Relativity and Parallel Occurrence of Decoherence. The Parallel Occurrence of Decoherence establishes the simultaneous occurrence of decoherence for two mutually irreducible structures (decomposition into subsystems) of the total QBM model universe. First we find that Everett world branching for one structure excludes branching for the alternate structure and in order to reconcile this situation branching cannot be allowed for either of the structures considered. Second, we observe the non-existence of a third, "emergent structure", that could approximate both structures and also be allowed to branch. Ultimately we find unless world-branching requires additional criteria or conditions, or there is a privileged structure, that we provide a valid model that cannot be properly described by the Everett Interpretation of Quantum Mechanics.

  7. The logic of the future in the Everett-Wheeler understanding of quantum theory

    E-Print Network [OSTI]

    Anthony Sudbery

    2015-02-04

    I discuss the problems of probability and the future in the Everett-Wheeler understanding of quantum theory. To resolve these, I propose an understanding of probability arising from a form of temporal logic: the probability of a future-tense proposition is identified with its truth value in a many-valued and context-dependent logic. I construct a lattice of tensed propositions, with truth values in the interval $[0,1]$, and derive logical properties of the truth values given by the usual quantum-mechanical formula for the probability of histories.

  8. Low resistance ohmic contacts on wide band-gap GaN M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. MorkoG

    E-Print Network [OSTI]

    Allen, Leslie H.

    -beam evaporation onto the GaN substrate, and then thermally annealed in a temperature range from 500 to 900 "C as high temperature/high power electrical devices, there still remains much more work to be done on GaN epilayers, Foresi et aL6 used Al and Au contacts with 575 "C anneal cycle. However, the specific

  9. MA351 Supplement

    E-Print Network [OSTI]

    MA351 In-class handouts. Examples from Lecture 3 and 4. An example about nullspaces. Examples about eigenvalues .

  10. U.S. Natural Gas Imports by Pipeline from Mexico

    Gasoline and Diesel Fuel Update (EIA)

    LNG Imports from Canada Champlain, NY Highgate Springs, VT Sumas, WA LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

  11. U.S. LNG Imports from Canada

    Gasoline and Diesel Fuel Update (EIA)

    LNG Imports from Canada Champlain, NY Highgate Springs, VT Sumas, WA LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

  12. MA 154 FORMULA SHEET

    E-Print Network [OSTI]

    delworth

    2006-01-07

    8/02. MA 154 FORMULA SHEET. ADDITION AND SUBTRACTION FORMULAS sin(u + v) = sinucosv + cosusinv sin(u? v) = sinucosv ? cosusinv cos(u + v) ...

  13. MA 15400 FORMULA SHEET

    E-Print Network [OSTI]

    User

    2011-11-07

    11/11. MA 15400 FORMULA SHEET. ADDITION AND SUBTRACTION FORMULAS sin(u + v) = sinucosv + cosusinv sin(u? v) = sinucosv ? cosusinv cos(

  14. MA 15400 Spring 2015

    E-Print Network [OSTI]

    MA 15400 Spring 2015. Form 01. Name: PUID. ClassTime/Day Section Instructor Room. MWF 8:30 am 0021 Delworth, Tim SMITH 108. Online 0004 Delworth ...

  15. MA 161 Page

    E-Print Network [OSTI]

    FINAL EXAM - December 12, Monday, 10:20am-12:20pm (Lambert Fieldhouse). Exam Locations and Seating Chart · MA 161 Final Exam Practice Problems ...

  16. MA 162 Page

    E-Print Network [OSTI]

    MA 162 FINAL EXAM - Wednesday, December 12 (3:30pm - 5:30pm). Seating Chart (LAMBERT FIELDHOUSE) · Exam #1 - STUDY GUIDE · Exam #2 - STUDY

  17. MA 266 Lecture 35

    E-Print Network [OSTI]

    2014-11-20

    MA 266 Lecture 35. 7.9 Nonhomogeneous Linear Systems. In this section, we consider the nonhomogeneous system x. /. = Ax + g(t). The general solution can ...

  18. Geography MA Program Orientation

    E-Print Network [OSTI]

    Mower, James E.

    Geography MA Program Orientation Department of Geography and Planning University at Albany #12; 36/thesis #12;Specialization Tracks Human Geography Physical Geography Geographic Information Systems See of Geography and Planning faculty #12;The Comprehensive Exam The "comps" are often given near the end

  19. Sorghum Ma5 and Ma6 maturity genes 

    E-Print Network [OSTI]

    Brady, Jeffrey Alan

    2009-05-15

    The Ma5 and Ma6 maturity loci in sorghum contain genes interacting epistatically to block flowering until an appropriate daylength is met. Because sorghum is a crop of tropical origin, its critical daylength is close to ...

  20. MA 152 Exam 1 Memo

    E-Print Network [OSTI]

    math

    2015-08-26

    that evening on the MA 15910 web page (www.math.purdue.edu/MA15910). 3) The exam is self-explanatory. No questions will be allowed unless a student ...

  1. MA Org Chart, August 13, 2015

    Energy Savers [EERE]

    MA-72 Administration, MIS, and Executive Commitments Group Shena Kennerly MA-74 Office of History and Archives MA-75 Terrence Fehner Office of Federal Advisory Committee Management...

  2. MA 15300Y Fall 2015

    E-Print Network [OSTI]

    Devlin, Patrick M

    2015-08-22

    Course Materials. • The documents that are relevant for the online section only are available at: www.math.purdue.edu/ma153y. • General course info and ...

  3. MA303: Practice Test 1

    E-Print Network [OSTI]

    2015-09-29

    MA303: Practice Test 1. Answer all questions, showing your working. Write your name on the question paper and hand it in together with your solutions.

  4. MA303: Practice Test 2

    E-Print Network [OSTI]

    2015-11-06

    MA303: Practice Test 2. Answer all questions, showing your working. Write your name on the question paper and hand it in together with your solutions.

  5. WIND DATA REPORT FALMOUTH, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT FALMOUTH, MA June1, 2004 to August 31, 2004. Prepared for Massachusetts Technology...................................................................................................................... 8 Wind Speed Time Series............................................................................................................. 8 Wind Speed Distributions

  6. MA 154 Schedule, Spring 2004

    E-Print Network [OSTI]

    math

    2015-02-11

    MA 15400 MWF and Online Sections, Spring 2015. Click on Lesson ---PP to watch a recorded lesson in YouTube. Some lessons are divided into two parts, ...

  7. CAES MaCS Home

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    cross-cutting capabilities that support the Center for Advanced Energy Studies' (CAES) mission in multiple initiative areas. MaCS is largely made possible through its...

  8. WIND DATA REPORT Nantucket, MA

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND DATA REPORT Nantucket, MA March 1st 2006 to May 31th 2006 Prepared for Massachusetts.................................................................................................................... 11 Wind Speed Time Series........................................................................................................... 11 Wind Speed Distribut

  9. MA 15300 Lesson 15 Inequality

    E-Print Network [OSTI]

    Patrick Devlin

    2014-05-12

    1. MA 15300 Lesson 15. Inequality: - a statement that two quantities or expressions are not necessarily equal. - an inequality can be expressed using any of the ...

  10. Discovery and utilization of sorghum genes (Ma5/Ma6)

    DOE Patents [OSTI]

    Mullet, John E; Rooney, William L; Klein, Patricia E; Morishige, Daryl; Murphy, Rebecca; Brady, Jeff A

    2012-11-13

    Methods and composition for the production of non-flowering or late flowering sorghum hybrid. For example, in certain aspects methods for use of molecular markers that constitute the Ma5/Ma6 pathway to modulate photoperiod sensitivity are described. The invention allows the production of plants having improved productivity and biomass generation.

  11. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  12. Taught degree MA in Film Studies

    E-Print Network [OSTI]

    Sussex, University of

    in The Times Good University Guide 2013, in the top 15 in the UK in The Complete University Guide 2014 and Media (p123) MA in International Journalism (p113) MA in Journalism and Documentary Practice (p113) MA in Journalism and Media Studies (p113) MA in Media and Cultural Studies (p123) MA in Media Practice

  13. MA15900 Expectations/Suggestions

    E-Print Network [OSTI]

    odavis

    2011-08-21

    WEB PAGE: …math.purdue.edu/MA15900 or go to www.math.purdue.edu and then click on ... wide and an inch deep. Be careful about assuming you already.

  14. MA15900 Expectations/Suggestions

    E-Print Network [OSTI]

    Owen Davis

    2008-08-29

    WEB PAGE: …math.purdue.edu/MA 15900 or go to www.math.purdue.edu and ... are available on the respective course web pages.) ... wide and an inch deep.

  15. MA 154 Schedule, Spring 2004

    E-Print Network [OSTI]

    math

    2015-01-05

    MA 13800 Calendar Spring 2015. Exam 1: Monday, February 9, 2015 at 8:00 in MATH 175. Exam 2: Monday, March 9, 2015 at 6:30 in MATH 175. Exam 3: ...

  16. MA 154 Schedule, Spring 2004

    E-Print Network [OSTI]

    math

    2013-03-20

    MA 15400 Online Lessons Links. Spring 2013. PP = PowerPoint. Boiler Cast Link = A recording of that days class. (this link will take you to all of the recordings).

  17. Final Exam for MA 265

    E-Print Network [OSTI]

    The Final Exam For MA 265: Fall 2002. Date: Thursday, December 12, 2002. Time: 3:20 - 5:20 pm. Room: Lambert Fieldhouse, or check the Online Catalog of

  18. Taught degrees MA in International Journalism

    E-Print Network [OSTI]

    Sussex, University of

    and Film at Sussex is ranked in the top 10 places to study in the UK in The Times Good University GuideEssentials Taught degrees MA in International Journalism MA in Journalism and Documentary Practice Journalism, MA in Journalism and Documentary Practice, MA in Journalism and Media Studies IELTS 6

  19. Scaling of X pinches from 1 MA to 6 MA.

    SciTech Connect (OSTI)

    Bland, Simon Nicholas; McBride, Ryan D.; Wenger, David Franklin; Sinars, Daniel Brian; Chittenden, Jeremy Paul; Pikuz, Sergei A.; Harding, Eric; Jennings, Christopher A.; Ampleford, David J.; Yu, Edmund P.; Cuneo, Michael Edward; Shelkovenko, Tatiana A.; Hansen, Stephanie B.

    2010-09-01

    This final report for Project 117863 summarizes progress made toward understanding how X-pinch load designs scale to high currents. The X-pinch load geometry was conceived in 1982 as a method to study the formation and properties of bright x-ray spots in z-pinch plasmas. X-pinch plasmas driven by 0.2 MA currents were found to have source sizes of 1 micron, temperatures >1 keV, lifetimes of 10-100 ps, and densities >0.1 times solid density. These conditions are believed to result from the direct magnetic compression of matter. Physical models that capture the behavior of 0.2 MA X pinches predict more extreme parameters at currents >1 MA. This project developed load designs for up to 6 MA on the SATURN facility and attempted to measure the resulting plasma parameters. Source sizes of 5-8 microns were observed in some cases along with evidence for high temperatures (several keV) and short time durations (<500 ps).

  20. MA.+'

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700, 1.Reports1E~LONG-TERMLetter

  1. Gabriel Sosa's Material for MA26200

    E-Print Network [OSTI]

    MA 26200: Linear Algebra and Differential Equations. Review Material. Trigonometric Identities Summary · Review of Integration Techniques. Quiz Information.

  2. Rehabilitation Counseling Masters of Arts (MA)

    E-Print Network [OSTI]

    Rehabilitation Counseling Masters of Arts (MA) STUDENT HANDBOOK Policies and Procedures of the Master of Arts (MA) Rehabilitation Counseling Program Michigan State University Department of Counseling;_____________________________________________ Student Handbook - MA Rehabilitation Counseling Program Page 2 of 32 Table of Contents Content Page

  3. DOE - Office of Legacy Management -- Beverly MA Site - MA 04

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co -VANaval ,, *'Aliquippa - PABeverly MA

  4. MA Mortenson | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavyAgency (IRENA) JumpLiterature Review HomeM-7 Technologies JumpMA

  5. US NE MA Site Consumption

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet) Wyoming963 1.969 1.979Coal Consumers inYear JanSales Type: Sales120NE MA Site

  6. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  7. Taught degree MA in Film Studies: Global Film Cultures

    E-Print Network [OSTI]

    Sussex, University of

    10 places to study in the UK in The Complete University Guide 2012-13 and The Times Good UniversityD in Film Studies Related degrees MA in Creative Media Practice (p119) MA in Digital Documentary (p120) MA in Digital Media (p121) MA in Gender and Media (p121) MA in Journalism and Documentary Practice (p111) MA

  8. MA/STAT 519's Home Page

    E-Print Network [OSTI]

    Good "working" knowledge of linear algebra and mathematical analysis. (In Purdue, these materials are taught in MA 265, 351, 353, 511, 440+442 and 504.).

  9. MA 26200 Class Information (Fall 2013)

    E-Print Network [OSTI]

    FINAL EXAM - Tuesday, December 10th (1:00pm - 3:00pm) LAMBERT Fieldhouse. Seating Chart (Lambert Fieldhouse) · MA 262 Final Exam resources

  10. MA 26600 Class Information (Fall 2012)

    E-Print Network [OSTI]

    ... for Important Announcements and Alerts ***. MA 266 FINAL EXAM - Tuesday, December 11 (10:30am - 12:30pm). Seating Chart (LAMBERT FIELDHOUSE) ...

  11. Earn your MA.Ed. in Adult Education from East Carolina University -Completely Online

    E-Print Network [OSTI]

    Gopalakrishnan, K.

    Earn your MA.Ed. in Adult Education from East Carolina University - Completely Online East Carolina University's accredited adult education program requires 36 semester experience in an adult education setting, an internship is recommended. Required

  12. Taught degrees MA in Journalism and Documentary Practice

    E-Print Network [OSTI]

    Sussex, University of

    in the top 10 places to study in the UK in The Complete University Guide 2012-13 and The Times GoodEssentials Taught degrees MA in Journalism and Documentary Practice MA in Journalism and Media Studies MA in Multimedia Journalism Related degrees MA in Creative Media Practice (p119) MA in Digital

  13. MA16010 : Applied Calculus I (Distance) Fall 2015

    E-Print Network [OSTI]

    2015-08-23

    COURSE WEB PAGE: http://www.math.purdue.edu/ma16010. PREREQUISITE: MA 15400 C- or better, MA 15800 C- or better, or ALEKS score of 75% or above.

  14. MA-504, Fall 2015, Test 2

    E-Print Network [OSTI]

    2015-10-23

    MA-504, Fall 2015, Test 2. Name: Answers. Problem 1. (a) Using the ?–? definition, prove that f(x)=1/x is continuous on R \\ {0}. (b) Prove that the same function ...

  15. M.A. TESOL PROGRAM GRADUATE HANDBOOK

    E-Print Network [OSTI]

    M.A. TESOL PROGRAM GRADUATE HANDBOOK Michigan State University Department of Linguistics........................................................................... 7 IV. Selection of Advisor and Thesis Committee, materials development, and assessment. It is believed that professionals in the field of TESOL should have

  16. MA in Globalization Studies Student Handbook

    E-Print Network [OSTI]

    Thompson, Michael

    MA in Globalization Studies Student Handbook 2014-15 Institute on Globalization and the Human://globalization.mcmaster.ca Meetings and materials are available in accessible formats on request #12;Table of Contents Welcome...................................................................................................................................................3 Selecting a Topic

  17. Montana State University 1 MA in History

    E-Print Network [OSTI]

    Maxwell, Bruce D.

    Montana State University 1 MA in History Master of Arts Degree, History The Department of History and Philosophy Graduate Program at MSU is designed to train students to think historically. The department offers concentrated training in three particular areas: the history of science, technology

  18. Programme Handbook MA in English Language

    E-Print Network [OSTI]

    Molinari, Marc

    Programme Handbook 2014-15 MA in English Language Teaching: Online #12;© Modern Languages of postgraduate study at one of the UK's leading research universities. The Handbook should be read in conjunction with the 2014-15 student information available on SUSSED and the Graduate School Handbook produced

  19. Business Management BA / MA (Hons) Key details

    E-Print Network [OSTI]

    Painter, Kevin

    Business Management BA / MA (Hons) Key details Duration: Full-time: 3 years (BA) / 4 years (MSc Management degree programme follows a number of guiding principles that mirror the values of managers of leading organisations and reflect current business management thinking. In the first two years of all

  20. MA Ph.D. Qualifying Exam Directions

    E-Print Network [OSTI]

    Liblit, Ben

    MA Ph.D. Qualifying Exam Fall 2010 Directions: Use careful reasoning to develop the answers to each numerical answers. You may use the LZGS text for reference for this exam. 1. Explain in detail why the mean with the system. Each query type i also generates a small amount of further processing time, with average Si

  1. MA265 Linear Algebra — Sample Exam 1

    E-Print Network [OSTI]

    page 1. Purdue University. MA265 Linear Algebra — Sample Exam 1. Date: February 20, 2015 Duration: 50 ... 1. Determine A such that (let-(A). 7 .110 [p. 1100 O r. In. )1 A n 1. \\\\\\\\l_ he zlxrs M. \\11. '01 .... Rep'mr'ata. 1 F'ncl '3“ m muVVnN

  2. MA Org Chart, January 5, 2016

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematics AndBeryllium Disease | Department of0 Inspection BEFORE9 -Lower Colorado River AuthorityMA

  3. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  4. MA/Ph.D. in Architecture Academic Graduate Student Handbook

    E-Print Network [OSTI]

    MA/Ph.D. in Architecture Academic Graduate Student Handbook #12;MA/Ph.D. in Architecture | Graduate Student Handbook (rev 10.14) 1 OVERVIEW The Department of Architecture in the School of Architecture of Arts) MA and Doctor of Philosophy (Ph.D.) in Architecture. This handbook describes the requirements

  5. American Studies -MA American Studies -Non-Degree Student

    E-Print Network [OSTI]

    Menasco, William

    Applied Economics: Health Services - CERT Applied Economics: Info. & Internet - CERT Applied Economics History - MA Arts Management - MA Arts Management (Non-Degree) - Non-Degree Student Biological Sciences Gender Studies - Non-Degree Student Global Gender Studies - PhD History - MA History - PhD History (Non

  6. Yellow-green emission for ETS-LEDs and lasers based on a strainedInGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer

    E-Print Network [OSTI]

    diodes have been fabricated utilizing simple top and bottom contacts. The highest LED power of 0.18µW perYellow-green emission for ETS-LEDs and lasers based on a strained­InGaP quantum well with a reduced power of 0.08µW per facet at 20mA. For a quantum well composition of In0.37Ga0.63P and an overall

  7. InThrMa | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy ResourcesOrder at 8, 13 (Vt. Water Res. Bd. May,InThrMa Jump to: navigation,

  8. MA - Office of Management - Energy Conservation Plan

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergy A plug-inPPLforLDRDEnergyTurbineProcessesEnergy | Department ofMA Energy

  9. MA Org Chart, August 13, 2015

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergy A plug-inPPLforLDRDEnergyTurbineProcessesEnergy | Department ofMA Energy1 Ingrid

  10. MA Org Chart, November 16, 2015

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergy A plug-inPPLforLDRDEnergyTurbineProcessesEnergy | Department ofMA Energy1

  11. Stimulated Emission from As-grown GaN Hexagons by Selective Area Growth Hydride Vapor Phase Epitaxy

    E-Print Network [OSTI]

    Stimulated Emission from As-grown GaN Hexagons by Selective Area Growth Hydride Vapor Phase Epitaxy Engineering and the Photonics Center, Boston University, 8 Saint Mary's St., Boston, MA 02215-2421, USA R hydride vapor phase epitaxy. We found the threshold for bulk stimulated emission to be 3.4 MW cm2

  12. Dimensional crossover and weak localization in a 90 nm n-GaAs thin film A. M. Gilbertson,1

    E-Print Network [OSTI]

    Bashir, Rashid

    for Materials Innovation, Washington University in St. Louis, 1 Brookings Drive, St. Louis, Missouri 63130, USA diffusive transport at the nanoscale.1 Alternatively, ma- terials with lower , such as GaAs, offer in terms of cost and processing complexity and are also appli- cable to the EEC effect. Accordingly, we

  13. The 300 mA SRF ERL

    SciTech Connect (OSTI)

    Ben-Zvi, Ilan

    2013-11-07

    Energy Recovery Linacs (ERL) are important for a variety of applications, from high-power Free-Electron Lasers (FEL) to polarized-electron polarized-proton colliders. The ERL current is arguably the most important characteristic of ERLs for such applications. With that in mind, the Collider-Accelerator Department at Brookhaven National Laboratory embarked on the development of a 300 mA ERL to serve as an R and D test-bed for high-current ERL technologies. These include high-current, extremely well damped superconducting accelerating cavities, high-current superconducting laser-photocathode electron guns and high quantum-efficiency photocathodes. In this presentation I will cover these ERL related developments.

  14. Course Materials • ALWAYS check the MA 15300 website FIRST ...

    E-Print Network [OSTI]

    Devlin, Patrick M

    2015-01-03

    policies and understand all the course materials on the website. • ALWAYS check the MA 15300 · website FIRST when searching for class information.

  15. Course Materials • ALWAYS check the MA 15300 website FIRST ...

    E-Print Network [OSTI]

    Devlin, Patrick M

    2015-08-22

    Course Materials. • Go to the MA 15300 website and read through all the course materials. • It is your responsibility to know all the course policies and ...

  16. MA16010 Trig, Exponential and Logarithm Review Material

    E-Print Network [OSTI]

    2015-06-15

    MA16010 Trig, Exponential and Logarithm Review Material. Trig, Exponential and Logarithm Contents: We have made some changes to the lecture coverage ...

  17. MA 16020 – EXAM FORMULAS THE SECOND DERIVATIVE TEST ...

    E-Print Network [OSTI]

    2015-10-21

    MA 16020 – EXAM FORMULAS. THE SECOND DERIVATIVE TEST. Suppose f is a function of two variables x and y, and that all the second-order partial ...

  18. MA16020 : Applied Calculus II – Online Distance Course Summer ...

    E-Print Network [OSTI]

    2015-07-24

    COURSE WEB PAGE: http://www.math.purdue.edu/ma16020. TEXTBOOK: No textbooks required to purchase. Course contents will be provided to students.

  19. Ground Rules for MA 30300 Summer 2015 (Online class) Instructor ...

    E-Print Network [OSTI]

    2015-05-05

    Ground Rules for MA 30300 Summer 2015 (Online class). Instructor: Prof. Veronica Quitalo (vquitalo@purdue.edu). Online lectures: Recorded/livestream ...

  20. Study Guide for Applied Calculus II, MA 16020

    E-Print Network [OSTI]

    2014-08-14

    Study Guide for MA 16020 Credit Exam. Students who pass the credit ... Practice Problems. The lesson plan lists the ... the instructions on the form. Good luck!

  1. Study Guide for Applied Calculus I, MA 16010

    E-Print Network [OSTI]

    2015-01-22

    Study Guide for MA 16010 Credit Exam. Students who pass the credit ... Practice Problems. The lesson plan lists the ... the instructions on the form. Good luck! 1 ...

  2. Radiation Protection Instrument Manual, Revision 1, PNL-MA-562

    SciTech Connect (OSTI)

    Johnson, Michelle Lynn

    2009-09-23

    PNL-MA-562 This manual provides specific information for operating and using portable radiological monitoring instruments available for use on the Hanford Site.

  3. MaRIE theory, modeling and computation roadmap executive summary...

    Office of Scientific and Technical Information (OSTI)

    discovery, with theory and high performance computing, itself co-designed by constrained optimization of hardware and software, and experiments. MaRIE's theory, modeling, and...

  4. MA 266 Lecture 35 7.9 Nonhomogeneous Linear Systems

    E-Print Network [OSTI]

    MA 266 Lecture 35. 7.9 Nonhomogeneous Linear Systems. In this section, we consider the nonhomogeneous system x' : Ax + g(t). The general solution can be

  5. Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network

    SciTech Connect (OSTI)

    Alvi, N. H., E-mail: nhalvi@isom.upm.es, E-mail: r.noetzel@isom.upm.es; Soto Rodriguez, P. E. D.; Kumar, Praveen; Gómez, V. J.; Aseev, P.; Nötzel, R., E-mail: nhalvi@isom.upm.es, E-mail: r.noetzel@isom.upm.es [ISOM Institute for Systems Based on Optoelectronics and Microtechnology, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Alvi, A. H. [Department of Physics, Government College University, Faisalabad (Pakistan); Alvi, M. A. [Department of Chemistry, Government College University, Faisalabad (Pakistan); Willander, M. [Department of Science and Technology (ITN), Campus Norrköping, Linköping University, 60174 Norrköping (Sweden)

    2014-06-02

    We investigate photoelectrochemical water splitting by a spontaneously formed In-rich InGaN nanowall network, combining the material of choice with the advantages of surface texturing for light harvesting by light scattering. The current density for the InGaN-nanowalls-photoelectrode at zero voltage versus the Ag/AgCl reference electrode is 3.4?mA cm{sup ?2} with an incident-photon-to-current-conversion efficiency (IPCE) of 16% under 350?nm laser illumination with 0.075?W·cm{sup ?2} power density. In comparison, the current density for a planar InGaN-layer-photoelectrode is 2?mA cm{sup ?2} with IPCE of 9% at zero voltage versus the Ag/AgCl reference electrode. The H{sub 2} generation rates at zero externally applied voltage versus the Pt counter electrode per illuminated area are 2.8 and 1.61??mol·h{sup ?1}·cm{sup ?2} for the InGaN nanowalls and InGaN layer, respectively, revealing ?57% enhancement for the nanowalls.

  6. A novel theoretical model for broadband blue InGaN/GaN superluminescent light emitting diodes

    SciTech Connect (OSTI)

    Moslehi Milani, N.; Mohadesi, V.; Asgari, A.

    2015-02-07

    A broadband superluminescent light emitting diode with In{sub 0.2}Ga{sub 0.8}N/GaN multiple quantum wells (MQWs) active region is investigated. The investigation is based on a theoretical model which includes the calculation of electronic states of the structure, rate equations, and the spectral radiation power. Two rate equations corresponding to MQW active region and separate confinement heterostructures layer are solved self-consistently with no-k selection wavelength dependent gain and quasi-Fermi level functions. Our results show that the superluminescence started in a current of ?120?mA (?7.5?kA/Cm{sup 2}) at 300?K. The range of peak emission wavelengths for different currents is 423–426?nm and the emission bandwidth is ?5?nm in the superluminescence regime. A maximum light output power of 7.59 mW is obtained at 600?mA and the peak modal gain as a function of current indicates logarithmic behavior. Also, the comparison of our calculated results with published experimental data is shown to be in good agreement.

  7. Postgraduate Studentship MA in English Local History and Family History

    E-Print Network [OSTI]

    Banaji,. Murad

    Postgraduate Studentship MA in English Local History and Family History The Thaxted Society (www.thaxted.co.uk) would like to sponsor a student to undertake the MA degree in English Local History and Family History in the Centre for English Local History at the University of Leicester. The student will undertake the usual

  8. ACADEMIC PLAN TESOL-MA OLD CURRICULUM CODE_182_

    E-Print Network [OSTI]

    Qiu, Weigang

    ACADEMIC PLAN TESOL-MA OLD CURRICULUM CODE_182_ DEGREE CODE _24__ Hunter College of the City English to Speakers of Other Languages TESOL Adult Program (36 Credits) Last, DEGREE AUDIT DIVISION. Student's Signature Date ____________________ #12;ACADEMIC PLAN TESOL-MA OLD

  9. ACADEMIC PLAN ENGAE-MA OLD CURRICULUM CODE_188_

    E-Print Network [OSTI]

    Qiu, Weigang

    ACADEMIC PLAN ENGAE-MA OLD CURRICULUM CODE_188_ DEGREE CODE _24__ Hunter College of the City, DEGREE AUDIT DIVISION. Student's Signature Date ____________________ #12;ACADEMIC PLAN ENGAE-MA OLD and Safety 1 Fall Spring Summer SEDC 711 Advanced Study of Young Adult Literature in our Diverse Population

  10. School of Psychology On the Psychology MA students will

    E-Print Network [OSTI]

    Miall, Chris

    School of Psychology On the Psychology MA students will advance their understanding and informing and engaging the public in psychological research. Dr Fay Julal, Programme Leader One year full-time Two years part-time MA Psychology #12;11623C©UniversityofBirmingham2015

  11. J. Michael Starling, M.A. Department of Educational Psychology

    E-Print Network [OSTI]

    Wu, Mingshen

    J. Michael Starling, M.A. Department of Educational Psychology Ball State University Muncie.D. Ball State University 2014 (Expected) Educational Psychology (General) Cognate: Research Methodology M.A. Ball State University 2009 School Psychology B.A. Anderson University 2008 Psychology Graduate

  12. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 ?m, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  13. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  14. STUDY GUIDE FOR MA 265 LINEAR ALGEBRA This study guide ...

    E-Print Network [OSTI]

    2001-05-09

    This study guide describes briefly the course materials to be covered in MA 265. In order to be qualified for the credit, one is expected not only to “know” these.

  15. Study Guide for Applied Calculus II And Differential Equations, MA ...

    E-Print Network [OSTI]

    2014-08-12

    The current text used for MA16021 as well as the course web page are listed below (A .... A vertical rectangular floodgate on a dam is 5 ft long and 4 ft deep.

  16. Journalism Concentration: Grady College MA Thesis Program Planning Form

    E-Print Network [OSTI]

    Arnold, Jonathan

    Journalism Concentration: Grady College MA Thesis Program Planning Form Student and Directed Readings in Mass Communication JRMC 8350 ( ) Special Topics in Journalism JRMC 8025 ( ) Mass Media Law JRMC 8365 ( ) Media Economics JRMC 7355 ( ) Health and Medical Journalism JRMC 7356 ( ) Advanced

  17. ANSWERS TO MA 130 FINAL EXAM REVIEW PROBLEMS

    E-Print Network [OSTI]

    Lisa Breidenbach

    2007-04-19

    ANSWERS TO MA 138 FINAL EXAM REVIEW PROBLEMS. 1. a. P(OIL) = 1 ... Only if ALL costs rise 25% is the landlord justified in raising rent by that amount.

  18. Opportunities and challenges of M&A in India

    E-Print Network [OSTI]

    Gupta, Nikhil, S.M. Massachusetts Institute of Technology

    2014-01-01

    The Indian economy has witnessed a major transformation since the government of India introduced the liberalization policies in 1991 .Since then M&A activity in India has picked up pace as foreign companies began to enter ...

  19. A new 40 MA ranchero explosive pulsed power system

    SciTech Connect (OSTI)

    Goforth, James; Herrera, Dennis; Oona, Hank; Torres, David; Atchison, W L; Colgate, S A; Griego, J R; Guzik, J; Holtkamp, D B; Idzorek, G; Kaul, A; Kirkpatrick, R C; Menikoff, R; Reardon, P T; Reinovsky, R E; Rousculp, C L; Sgro, A G; Tabaka, L J; Tierney, T E; Watt, R G

    2009-01-01

    We are developing a new high explosive pulsed power (HEPP) system based on the 1.4 m long Ranchero generator which was developed in 1999 for driving solid density z-pinch loads. The new application requires approximately 40 MA to implode similar liners, but the liners cannot tolerate the 65 {micro}s, 3 MA current pulse associated with delivering the initial magnetic flux to the 200 nH generator. To circumvent this problem, we have designed a system with an internal start switch and four explosively formed fuse (EFF) opening switches. The integral start switch is installed between the output glide plane and the armature. It functions in the same manner as a standard input crowbar switch when armature motion begins, but initially isolates the load. The circuit is completed during the flux loading phase using post hole convolutes. Each convolute attaches the inner (coaxial) output transmission line to the outside of the outer coax through a penetration of the outer coaxial line. The attachment is made with the conductor of an EFF at each location. The EFFs conduct 0.75 MA each, and are actuated just after the internal start switch connects to the load. EFFs operating at these parameters have been tested in the past. The post hole convolutes must withstand as much as 80 kV at peak dl/dt during the Ranchero load current pulse. We describe the design of this new HEPP system in detail, and give the experimental results available at conference time. In addition, we discuss the work we are doing to test the upper current limits of a single standard size Ranchero module. Calculations have suggested that the generator could function at up to {approx}120 MA, the rule of thumb we follow (1 MA/cm) suggests 90 MA, and simple flux compression calculations, along with the {approx}4 MA seed current available from our capacitor bank, suggests 118 MA is the currently available upper limit.

  20. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  1. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  2. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  3. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  4. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  5. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  6. MA Thesis Degree Program Checklist By End of Second Term

    E-Print Network [OSTI]

    Arnold, Jonathan

    MA Thesis Degree Program Checklist By End of Second Term ( ) Select major professor and other two Advisory Committee members. ( ) Submit Program of Study. ( ) Submit thesis proposal to Advisory Committee for approval. ( ) Submit copy of approved thesis proposal to Grady Graduate Studies Office. ( ) Pick up thesis

  7. Worksheet for the MA in Statistics Thesis Option

    E-Print Network [OSTI]

    McAuliffe, Jon

    Worksheet for the MA in Statistics Thesis Option Name: (Last, first, middle) SID #: E-mail: Local Courses When taking the thesis option, a total of 20 units is need to complete the degree, of which: _____________________________________________________________________________________________ Department Course # Course Title Units Semester Grade Thesis Proposed Thesis Title

  8. THE MIT PRESS 55 Hayward Street, Cambridge, MA 02142

    E-Print Network [OSTI]

    Jackson, Daniel

    THE MIT PRESS 55 Hayward Street, Cambridge, MA 02142 Sales Director: phone: 617-253-8838/ Fax: 617-253-1709 STP AGENCY PLAN Retail bookshops who regularly stock The MIT Press Scholarly, Technical order sufficient to achieve the 10-title minimum stock level must be sent to the Press or, alternatively

  9. ON SOLAR NEUTRINO PROBLEM TIAN MA AND SHOUHONG WANG

    E-Print Network [OSTI]

    ON SOLAR NEUTRINO PROBLEM TIAN MA AND SHOUHONG WANG Abstract. The current neutrino oscillation an alternative resolution to the solar neutrino loss problem. Contents 1. Introduction 1 2. Discrepancy of Solar, there are three flavors of neutrinos: the electron neutrino e, the tau neutrino and the mu neutrino µ. The solar

  10. Harvard Ed Portal 224 Western Ave., Allston, MA 02134

    E-Print Network [OSTI]

    Chou, James

    Harvard Ed Portal 224 Western Ave., Allston, MA 02134 Parking Map and Driving Directions From Harvard Square/Cambridge: The Ed Portal is located past Harvard Stadium. Continue to the stoplight at the intersection of North Harvard St. and Western Ave., and take a right on Western Ave. The Ed Portal is located

  11. MA50177: Scientific Computing Nuclear Reactor Simulation Generalised Eigenvalue Problems

    E-Print Network [OSTI]

    Wirosoetisno, Djoko

    MA50177: Scientific Computing Case Study Nuclear Reactor Simulation ­ Generalised Eigenvalue of a malfunction or of an accident experimentally, the numerical simulation of nuclear reactors is of utmost balance in a nuclear reactor are the two-group neutron diffusion equations -div (K1 u1) + (a,1 + s) u1 = 1

  12. Predictive usage mining for life cycle assessment Jungmok Ma a

    E-Print Network [OSTI]

    Kim, Harrison

    Predictive usage mining for life cycle assessment Jungmok Ma a , Harrison M. Kim b, a Department e i n f o Article history: Keywords: Life cycle assessment Usage modeling Time series segmentation Time series analysis a b s t r a c t The usage modeling in life cycle assessment (LCA) is rarely

  13. Lena Qiying Ma Page 1 Total publications 177

    E-Print Network [OSTI]

    Balser, Teri C.

    Society of America (2002) Chair, Soil Science Applied Research Award Committee, Soil Science Society of America (2000-2001) Board of director, Soil Crop Sci. Soc. Florida Award Committee (2003-2006) Summary) 1. Ma, L.Q. J.C. Bonzongo and B. Gao. Environmental impacts of coal combustion residues in Florida

  14. Glass, Brian 1 BRIAN DANIEL GLASS, M.A.

    E-Print Network [OSTI]

    Maddox, W. Todd

    Glass, Brian 1 BRIAN DANIEL GLASS, M.A. University Department of Psychology, A8000 The University of Texas at Austin Austin, TX 78712 (512) 232-2883 e-mail: glass@mail.utexas.edu EDUCATION 2006 ­ Cognitive include: Designing and constructing experiments, statistical #12;Glass, Brian 2 analysis, manuscript

  15. Glass, Brian 1 BRIAN DANIEL GLASS, M.A.

    E-Print Network [OSTI]

    Maddox, W. Todd

    Glass, Brian 1 BRIAN DANIEL GLASS, M.A. University Department of Psychology, A8000 The University Making, The University of Texas at Austin #12;Glass, Brian 2 Duties include: Designing and constructing, constructing, and running experiments, statistical analysis. JOURNAL PUBLICATIONS Glass, B. D., Chotibut, T

  16. Glass, Brian 1 BRIAN DANIEL GLASS, M.A.

    E-Print Network [OSTI]

    Maddox, W. Todd

    Glass, Brian 1 BRIAN DANIEL GLASS, M.A. University Department of Psychology, A8000 The University of Categorization and Decision Making, The University of Texas at Austin #12;Glass, Brian 2 Duties include: Programming, constructing, and running experiments, statistical analysis. JOURNAL PUBLICATIONS Glass, B. D

  17. Engineering Ethics Richard A. Burgess, M.A.

    E-Print Network [OSTI]

    Gelfond, Michael

    Engineering Ethics Richard A. Burgess, M.A. Texas Tech T-STEM Center and Deputy Director, National Institute for Engineering Ethics Summer 2012 #12;STEM includes Engineering · No single profession impacts modern life as thoroughly as engineering does. (examples: cars, buildings, electronic devices, water

  18. Component geochronology in the polyphase ca. 3920 Ma Acasta Gneiss

    E-Print Network [OSTI]

    Mojzsis, Stephen J.

    Component geochronology in the polyphase ca. 3920 Ma Acasta Gneiss Stephen J. Mojzsis a, we combined new ion microprobe 235,238 U­207,206 Pb zircon geochronology with whole-rock and zircon geochronology for an individual subdivided $60 cm2 slab of Acasta banded gneiss comprising five separate

  19. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  20. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  1. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  2. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  3. Experimental Physical Sciences Vistas: MaRIE (draft)

    SciTech Connect (OSTI)

    Shlachter, Jack [Los Alamos National Laboratory

    2010-09-08

    To achieve breakthrough scientific discoveries in the 21st century, a convergence and integration of world-leading experimental facilities and capabilities with theory, modeling, and simulation is necessary. In this issue of Experimental Physical Sciences Vistas, I am excited to present our plans for Los Alamos National Laboratory's future flagship experimental facility, MaRIE (Matter-Radiation Interactions in Extremes). MaRIE is a facility that will provide transformational understanding of matter in extreme conditions required to reduce or resolve key weapons performance uncertainties, develop the materials needed for advanced energy systems, and transform our ability to create materials by design. Our unique role in materials science starting with the Manhattan Project has positioned us well to develop a contemporary materials strategy pushing the frontiers of controlled functionality - the design and tailoring of a material for the unique demands of a specific application. Controlled functionality requires improvement in understanding of the structure and properties of materials in order to synthesize and process materials with unique characteristics. In the nuclear weapons program today, improving data and models to increase confidence in the stockpile can take years from concept to new knowledge. Our goal with MaRIE is to accelerate this process by enhancing predictive capability - the ability to compute a priori the observables of an experiment or test and pertinent confidence intervals using verified and validated simulation tools. It is a science-based approach that includes the use of advanced experimental tools, theoretical models, and multi-physics codes, simultaneously dealing with multiple aspects of physical operation of a system that are needed to develop an increasingly mature predictive capability. This same approach is needed to accelerate improvements to other systems such as nuclear reactors. MaRIE will be valuable to many national security science challenges. Our first issue of Vistas focused on our current national user facilities (the Los Alamos Neutron Science Center [LANSCE], the National High Magnetic Field Laboratory-Pulsed Field Facility, and the Center for Integrated Nanotechnologies) and the vitality they bring to our Laboratory. These facilities are a magnet for students, postdoctoral researchers, and staff members from all over the world. This, in turn, allows us to continue to develop and maintain our strong staff across the relevant disciplines and conduct world-class discovery science. The second issue of Vistas was devoted entirely to the Laboratory's materials strategy - one of the three strategic science thrusts for the Laboratory. This strategy has helped focus our thinking for MaRIE. We believe there is a bright future in cutting-edge experimental materials research, and that a 21st-century facility with unique capability is necessary to fulfill this goal. The Laboratory has spent the last several years defining MaRIE, and this issue of Vistas presents our current vision of that facility. MaRIE will leverage LANSCE and our other user facilities, as well as our internal and external materials community for decades to come, giving Los Alamos a unique competitive advantage, advancing materials science for the Laboratory's missions and attracting and recruiting scientists of international stature. MaRIE will give the international materials research community a suite of tools capable of meeting a broad range of outstanding grand challenges.

  4. MaRIE 1.0: The Matter-Radiation Interactions in Extremes Project...

    Office of Scientific and Technical Information (OSTI)

    Conference: MaRIE 1.0: The Matter-Radiation Interactions in Extremes Project, and the Challenge of Dynamic Mesoscale Imaging Citation Details In-Document Search Title: MaRIE 1.0:...

  5. MaGKeyS : a haptic guidance keyboard system for facilitating sensorimotor training and rehabilitation

    E-Print Network [OSTI]

    Lewiston, Craig Edwin

    2009-01-01

    The Magnetic Guidance Keyboard System (MaGKeyS) embodies a new haptic guidance technology designed to facilitate sensorimotor training and rehabilitation. MaGKeyS works by employing active magnetic force to guide finger ...

  6. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  7. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  8. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  9. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  10. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  11. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  12. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  13. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  14. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  15. DOE - Office of Legacy Management -- Tracerlab Inc - MA 11

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co - OHStarTracerlab Inc - MA 11 FUSRAP

  16. FuMA Tech GmbH | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:ofEnia SpAFlex FuelsEnergyInc| OpenFuMA Tech GmbH Jump to:

  17. SE-MA-NO Electric Coop | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg,EnergyEastCarbon Development | OpenGmbH JumpSBASE-MA-NO

  18. Town of Danvers, MA Smart Grid Project | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc JumpHeterInformation PolicyTinnaBraman, OklahomaTown of Crane,Danvers, MA

  19. Johnston LFG (MA RPS Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View NewGuam:onItron (California) JumpJeffersonJessi3bl'sDeControlsLFG (MA

  20. MaRIE: An experimental facility concept revolutionizing materials in

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing(Journalspectroscopy ofArticle)SciTech Connect Conference: MaRIE: A

  1. MaRIE: An experimental facility concept revolutionizing materials in

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing(Journalspectroscopy ofArticle)SciTech Connect Conference: MaRIE: Aextremes

  2. El Ma Electronic Machining srl | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavy Electricals LtdEcowind Jump to: navigation, searchEfunEkaratMa

  3. Everett, Washington: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePowerEdisto Electric Coop,Erosion FlumeEvent Planning Page Updated! Home

  4. Science and Technology of the 10-MA Spherical Tori

    SciTech Connect (OSTI)

    Peng, Y-K.M.

    1999-11-14

    The Spherical Torus (ST) configuration has recently emerged as an example of confinement concept innovation that enables attractive steps in the development of fusion energy. The scientific potential for the ST has been indicated by recent encouraging results from START,2 CDX-U, and HIT. The scientific principles for the D-fueled ST will soon be tested by NSTX (National Spherical Torus Experiment3) in the U.S. and MAST (Mega-Amp Spherical Tokamak4) in the U.K. at the level of l-2 MA in plasma current. More recently, interest has grown in the U.S. in the possibility of near-term ST fusion burn devices at the level of 10 MA in plasma current. The missions for these devices would be to test burning plasma performance in a small, pulsed D-T-fueled ST (i.e., DTST) and to develop fusion energy technologies in a small steady state ST-based Volume Neutron Source (VNS). This paper reports the results of analysis of the key science and technology issues for these devices.

  5. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  6. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  7. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  8. MA 16200 Study Guide for material since Exam 3, Fall 2014 NOTE ...

    E-Print Network [OSTI]

    2014-11-28

    MA 16200 Study Guide for material since Exam 3, Fall 2014. NOTE: SINCE THE FINAL EXAM WILL COVER ALL THE MATERIAL OF THE. COURSE, YOU ...

  9. Course Syllabus for MA 16100, Fall 2015 Course Objectives: 1. To ...

    E-Print Network [OSTI]

    2015-08-21

    An education study: The university is conducting an education study to measure the effectiveness of MA 16100. There are six course activities connected with ...

  10. Examenrooster 1MA Bio-ingenieurswetenschappen: Cel-en Genbiotechnologie + Chemie en Bioprocestechnologie

    E-Print Network [OSTI]

    Einmahl, Uwe

    Examenrooster 1MA Bio-ingenieurswetenschappen: Cel- en Genbiotechnologie + Chemie en (UGent) Mondeling examen: maandag 15/06/2015 Industriële bio-organische chemie (G. VERNIEST) Partim

  11. MA54200 HOMEWORK 1.3. Show that the principal value integral ...

    E-Print Network [OSTI]

    2008-09-15

    MA54200 HOMEWORK. ASSIGNMENT 1: SOLUTIONS. 1.3. Show that the principal value integral. p.v.. ? ?(x) x dx = lim. ??0+. (? ??. ?? ?(x) x dx +. ? ?. ?.

  12. Purdue University Study Guide for MA 224 (For students who plan to ...

    E-Print Network [OSTI]

    becker

    2004-04-09

    Study Guide for MA 224 ... homework problems from the assignment sheet and the final exam practice problems pro- vide good preparation for the examination.

  13. Purdue University Study Guide for MA 220 (For students who plan to ...

    E-Print Network [OSTI]

    becker

    2004-04-12

    Study Guide for MA 220 ... homework problems from the assignment sheet and the final exam practice problems pro- vide good preparation for the examination.

  14. Purdue University Study Guide for MA 222 (For students who plan to ...

    E-Print Network [OSTI]

    becker

    2004-04-09

    Study Guide for MA 222 ... homework problems from the assignment sheet and the final exam practice problems pro- vide good preparation for the examination.

  15. Purdue University Study Guide for MA 221 (For students who plan to ...

    E-Print Network [OSTI]

    becker

    2004-04-09

    Study Guide for MA 221 ... homework problems from the assignment sheet and the final exam practice problems pro- vide good preparation for the examination.

  16. 1 Ma 15200 Lesson 18 Section 1.7 I Representing an Inequality ...

    E-Print Network [OSTI]

    charlotb

    2010-10-04

    1. Ma 15200 Lesson 18 Section 1.7. I. Representing an Inequality. There are 3 ways to represent an inequality. (1) Using the inequality symbol (sometime.

  17. 1 Ma 15200 Lesson 18 Section 1.7 I Representing an Inequality ...

    E-Print Network [OSTI]

    charlotb

    2011-02-22

    1. Ma 15200 Lesson 18 Section 1.7. I. Representing an Inequality. There are 3 ways to represent an inequality. (1) Using the inequality symbol (sometime.

  18. [info:lanl-repo/lareport/LA-UR-15-20995] MaRIE: A facility for...

    Office of Scientific and Technical Information (OSTI)

    5-20995 Title: MaRIE: A facility for time-dependent materials science at the mesoscale Author(s): Barnes, Cris William ; Kippen, Karen Elizabeth Source:...

  19. MA 15300, 15400 and 15800 all use the same textbook: Algebra ...

    E-Print Network [OSTI]

    Department of Mathematics

    2013-01-05

    MA 15300, 15400 and 15800 all use the same textbook: Algebra and Trigonometry with Analytic Geometry by Swokowski and Cole,. Classic 12th Edition ...

  20. MA511: PRACTICE TEST 1 Answer all questions. Write your name ...

    E-Print Network [OSTI]

    2014-09-22

    MA511: PRACTICE TEST 1. Answer all questions. Write your name on the question paper and hand it in together with your solutions. No calculators or other

  1. Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

    SciTech Connect (OSTI)

    Du, Chunhua; Ma, Ziguang; Zhou, Junming; Lu, Taiping; Jiang, Yang; Zuo, Peng; Jia, Haiqiang; Chen, Hong, E-mail: hchen@iphy.ac.cn [Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-08-18

    We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane sapphire substrate. The output power and dominant wavelength at 20?mA are 0.24 mW and 556.3?nm. High resolution x-ray diffraction, photoluminescence, and electroluminescence measurements demonstrate that efficiency enhancement could be partially attributed to crystal quality improvement of the active region resulted from reduced In clusters and relevant defects on the surface of InGaN layer by introducing interruptions. The less tilted energy band in the quantum well is also caused by the decrease of In-content gradient along c-axis resulted from In segregation during the interruptions, which increases spatial overlap of electron-hole wavefunction and thus the internal quantum efficiency. The latter also leads to smaller blueshift of dominant wavelength with current increasing.

  2. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  3. MA MA AP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCentermillion to localPartnership willLynn Rippe LynnParallel

  4. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  5. Development of a Hydronic Rooftop Unit-HyPak-MA

    SciTech Connect (OSTI)

    Eric Lee; Mark Berman

    2009-11-14

    The majority of U.S. commercial floor space is cooled by rooftop HVAC units (RTUs). RTU popularity derives chiefly from their low initial cost and relative ease of service access without disturbing building occupants. Unfortunately, current RTUs are inherently inefficient due to a combination of characteristics that unnecessarily increase cooling loads and energy use. 36% percent of annual U.S. energy, and two-thirds of electricity, is consumed in and by buildings. Commercial buildings consume approximately 4.2 quads of energy each year at a cost of $230 billion per year, with HVAC equipment consuming 1.2 quads of electricity. More than half of all U.S. commercial floor space is cooled by packaged HVAC units, most of which are rooftop units (RTUs). Inefficient RTUs create an estimated 3.5% of U.S. CO{sub 2} emissions, thus contributing significantly to global warming5. Also, RTUs often fail to maintain adequate ventilation air and air filtration, reducing indoor air quality. This is the second HyPak project to be supported by DOE through NETL. The prior project, referred to as HyPak-1 in this report, had two rounds of prototype fabrication and testing as well as computer modeling and market research. The HyPak-1 prototypes demonstrated the high performance capabilities of the HyPak concept, but made it clear that further development was required to reduce heat exchanger cost and improve system reliability before HyPak commercialization can commence. The HyPak-1 prototypes were limited to about 25% ventilation air fraction, limiting performance and marketability. The current project is intended to develop a 'mixed-air' product that is capable of full 0-100% modulation in ventilation air fraction, hence it was referred to as HyPak-MA in the proposal. (For simplicity, the -MA has been dropped when referencing the current project.) The objective of the HyPak Project is to design, develop and test a hydronic RTU that provides a quantum improvement over conventional RTU performance. Our proposal targeted 60% and 50% reduction in electrical energy use by the HyPak RTU for dry and humid climates, respectively, when compared with a conventional unit, and reduction in peak energy consumption of 50% and 33% respectively. In addition to performance targets, our goal is to develop a production-ready design with durability, reliability and maintainability similar to air-cooled packaged equipment, and that can be commercialized immediately following the conclusion of this project.

  6. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  7. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  8. Mis `a jour le 5 decembre 2009 Rapport sur ma mission

    E-Print Network [OSTI]

    Waldschmidt, Michel

    Mis `a jour le 5 d´ecembre 2009 Rapport sur ma mission French Science Tour in Pakistan du 25 au Pakistan, `a effectuer une mission French Science Tour in Pakistan du 25 novembre au 2 d'agissait de ma deuxi`eme mission au Pakistan, la premi`ere ayant eu lieu en f´evrier 2009, quand j'avais pass

  9. Statistical inference of spectral estimation for continuous-time MA processes with

    E-Print Network [OSTI]

    Statistical inference of spectral estimation for continuous-time MA processes with finite second moments Vicky Fasen In this paper we investigate a continuous-time MA (moving average) process (Xt)t0 of applications, e.g., finance, insurance, physics, signal processing and control. Continuous-time models

  10. 72 School of Communication Master of Arts (MA) in International Journalism Studies

    E-Print Network [OSTI]

    Cheung, Yiu-ming

    72 School of Communication Master of Arts (MA) in International Journalism Studies (One-year Full-time or Two-year Part-time) Mr. CHEUNG Siu Wai, Programme Director Aims The MA in International Journalism Studies Programme provides professional postgraduate studies in international journalism with a particular

  11. Fast Track Program for Master of Arts (M.A.) Degree in Economics

    E-Print Network [OSTI]

    Huang, Haiying

    Fast Track Program for Master of Arts (M.A.) Degree in Economics The Fast Track program will enable outstanding senior undergraduate business and economics students to satisfy degree requirements leading to a master's degree (M.A.) in economics while completing their undergraduate studies. The Fast Track program

  12. Stress direction history of the western United States and Mexico since 85 Ma

    E-Print Network [OSTI]

    Bird, Peter

    Stress direction history of the western United States and Mexico since 85 Ma Peter Bird Department stress azimuth ^s1H was fairly constant at $68° (United States) to 75° (Mexico). During 50­35 Ma, both counterclockwise stress changes (in the Pacific Northwest) and clockwise stress changes (from Nevada to New Mexico

  13. Hanford External Dosimetry Technical Basis Manual PNL-MA-842

    SciTech Connect (OSTI)

    Rathbone, Bruce A.

    2005-02-25

    The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNL’s Hanford External Dosimetry Program which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. Rev. 0 marks the first revision to be released through PNNL’s Electronic Records & Information Capture Architecture (ERICA) database.

  14. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  15. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  16. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  17. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  18. Topics for BA and MA Theses at the chair of Prof. Klasen The list below gives contains proposals for Bachelor (BA) and Master (MA) thesis topics. You can also

    E-Print Network [OSTI]

    Krivobokova, Tatyana

    levels and dynamics in Russia / Cote d'Ivoire/ (any country where an appropriate dataset can be found) MA sequence do countries improve their human development performance? MA Export-oriented growth and female

  19. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  20. Hanford External Dosimetry Technical Basis Manual PNL-MA-842

    SciTech Connect (OSTI)

    Rathbone, Bruce A.

    2009-08-28

    The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNL’s Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNL’s Electronic Records & Information Capture Architecture (ERICA) database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document.

  1. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  2. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  3. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  4. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  5. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  6. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  7. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  8. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  9. Hanford External Dosimetry Technical Basis Manual PNL-MA-842

    SciTech Connect (OSTI)

    Rathbone, Bruce A.

    2007-03-12

    The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNL’s Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. Rev. 0 marks the first revision to be released through PNNL’s Electronic Records & Information Capture Architecture (ERICA) database. Revision numbers that are whole numbers reflect major revisions typically involving changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Revision Log: Rev. 0 (2/25/2005) Major revision and expansion. Rev. 0.1 (3/12/2007) Minor revision. Updated Chapters 5, 6 and 9 to reflect change in default ring calibration factor used in HEDP dose calculation software. Factor changed from 1.5 to 2.0 beginning January 1, 2007. Pages on which changes were made are as follows: 5.23, 5.69, 5.78, 5.80, 5.82, 6.3, 6.5, 6.29, 9.2.

  10. Hanford External Dosimetry Technical Basis Manual PNL-MA-842

    SciTech Connect (OSTI)

    Rathbone, Bruce A.

    2011-04-04

    The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at the U.S. Department of Energy (DOE) Hanford site. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with requirements of 10 CFR 835, the DOE Laboratory Accreditation Program, the DOE Richland Operations Office, DOE Office of River Protection, DOE Pacific Northwest Office of Science, and Hanford’s DOE contractors. The dosimetry system is operated by the Pacific Northwest National Laboratory (PNNL) Hanford External Dosimetry Program which provides dosimetry services to PNNL and all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNL’s Electronic Records & Information Capture Architecture database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2.

  11. Hanford External Dosimetry Technical Basis Manual PNL-MA-842

    SciTech Connect (OSTI)

    Rathbone, Bruce A.

    2010-04-01

    The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at the U.S. Department of Energy (DOE) Hanford site. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with requirements of 10 CFR 835, the DOE Laboratory Accreditation Program, the DOE Richland Operations Office, DOE Office of River Protection, DOE Pacific Northwest Office of Science, and Hanford’s DOE contractors. The dosimetry system is operated by the Pacific Northwest National Laboratory (PNNL) Hanford External Dosimetry Program which provides dosimetry services to PNNL and all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNL’s Electronic Records & Information Capture Architecture database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2.

  12. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  13. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  14. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  15. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  16. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  17. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  18. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  19. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  20. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  1. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  2. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  3. Wireless Network Security and Interworking MINHO SHIN, JUSTIN MA, ARUNESH MISHRA, AND WILLIAM A. ARBAUGH

    E-Print Network [OSTI]

    Wireless Network Security and Interworking MINHO SHIN, JUSTIN MA, ARUNESH MISHRA, AND WILLIAM A, in- terworking between heterogeneous wireless networks is extremely important for ubiquitous and high communication technologies cover a whole spec- trum from wireless personal area networks (WPANs

  4. MA 153 - Quiz 18 (?2 minutes) Solution Statistics (out of 10 ...

    E-Print Network [OSTI]

    2011-11-04

    MA 153 - Quiz 18 (?2 minutes). Solution. Statistics (out of 10): Section. 36 42. Average 8.5 8.7. Max. 10. 9. Min. 4. 4. Four points are free on this quiz. 1. Let f and ...

  5. MA 153 - Quiz 9 (?10 minutes) Solution Statistics (out of 10 ...

    E-Print Network [OSTI]

    2011-09-30

    MA 153 - Quiz 9 (?10 minutes). Solution. Statistics (out of 10): Section. 36 42. Average 7.6 8.5. Max. 10 10. Min. 3. 3. 1. Write. 4i. 2 ? i as a real part plus an ...

  6. MA 261 - Quiz 9 (20 minutes) Tuesday, April 5, 2011 Solution ...

    E-Print Network [OSTI]

    2011-04-11

    MA 261 - Quiz 9 (20 minutes). Tuesday, April 5, 2011. Solution. Statistics (out of 20): Section. 23. 24. Average. 13.2 12.7. Standard Deviation 4.8. 4.6. Median. 14.

  7. MA 153 - Quiz 17 (?10 minutes) Solution Statistics (out of 10 ...

    E-Print Network [OSTI]

    2011-11-04

    MA 153 - Quiz 17 (?10 minutes). Solution. Statistics (out of 10): Section. 36 42. Average 8.7 9.1. Max. 10 10. Min. 1. 7. This is a take-home quiz. It should be ...

  8. MA 261 - Quiz 11 (20 minutes) Tuesday, April 19, 2011 Solution ...

    E-Print Network [OSTI]

    2011-04-25

    MA 261 - Quiz 11 (20 minutes). Tuesday, April 19, 2011. Solution. Statistics (out of 20): Section. 23. 24. Average. 14.5 13.4. Standard Deviation 3.2. 3.4. Median.

  9. MA 153 - Quiz 20 (?10 minutes) Solution Statistics (out of 10 ...

    E-Print Network [OSTI]

    2011-11-28

    MA 153 - Quiz 20 (?10 minutes). Solution. Statistics (out of 10): Section. 36 42. Average 9.6 11. Max. 13 13. Min. 7. 8. This is an open-note, open-book quiz.

  10. MA 153 - Quiz 15 (?10 minutes) Solution Statistics (out of 10 ...

    E-Print Network [OSTI]

    2011-10-28

    MA 153 - Quiz 15 (?10 minutes). Solution. Statistics (out of 10): Section. 36 42. Average 7.6 6.9. Max. 10. 9. Min. 4. 2. This is a take-home quiz. It should be ...

  11. MA 153 - Quiz 13 (?5 minutes) Solution Statistics (out of 10 ...

    E-Print Network [OSTI]

    2011-10-17

    MA 153 - Quiz 13 (?5 minutes). Solution. Statistics (out of 10): Section. 36 42. Average 5.7 6.1. Max. 10. 9. Min. 1. 1. 1. A returning baseball player starts the ...

  12. MA 261 - Quiz 6 (20 minutes) Tuesday, March 1, 2011 Solution ...

    E-Print Network [OSTI]

    2011-03-07

    MA 261 - Quiz 6 (20 minutes). Tuesday, March 1, 2011. Solution. Statistics (out of 20): Section. 23. 24. Average. 15.9 15.3. Standard Deviation 3.7. 4.0. Median.

  13. MA 261 - Quiz 10 (20 minutes) Tuesday, April 12, 2011 Solution ...

    E-Print Network [OSTI]

    2011-04-19

    MA 261 - Quiz 10 (20 minutes). Tuesday, April 12, 2011. Solution. Statistics (out of 20): Section. 23. 24. Average. 12.7 14.2. Standard Deviation 5.1. 5.1. Median.

  14. MA 153 - Quiz 7 (?4 minutes) Solution Statistics (out of 10): Section ...

    E-Print Network [OSTI]

    2011-09-23

    MA 153 - Quiz 7 (?4 minutes). Solution. Statistics (out of 10): Section 36. 42. Average 9 9.14. Max. 10. 10. Min. 6. 6. This is an open-note/book quiz. 4 points are ...

  15. MA 153 - Quiz 4 (7 minutes) Solution Statistics (out of 10): Section ...

    E-Print Network [OSTI]

    2011-09-08

    MA 153 - Quiz 4 (7 minutes). Solution. Statistics (out of 10): Section. 36 42. Average 7.9 8.5. Max. 10 10. Min. 2. 3. 1. (6 points). (a) (4 points) Write y x. ?.

  16. MA 153 - Quiz 5 (10 minutes) Solution Statistics (out of 10): Section ...

    E-Print Network [OSTI]

    2011-09-14

    MA 153 - Quiz 5 (10 minutes). Solution. Statistics (out of 10): Section. 36. 42. Average 8.45 8.3. Max. 10. 10. Min. 1. 2. 1. (5 points) Nancy has earned 93, 83 and ...

  17. MA 153 - Quiz 6 (10 minutes) Solution Statistics (out of 10): Section ...

    E-Print Network [OSTI]

    2011-09-19

    MA 153 - Quiz 6 (10 minutes). Solution. Statistics (out of 10): Section. 36. 42. Average 8.12 8.78. Max. 10. 10. Min. 4. 2. 1. (5 points) Jake has 3 meters of wire,

  18. MA 261 - Quiz 8 (20 minutes) Tuesday, March 22, 2011 Solution ...

    E-Print Network [OSTI]

    2011-04-11

    MA 261 - Quiz 8 (20 minutes). Tuesday, March 22, 2011. Solution. Statistics (out of 20): Section. 23. 24. Average. 12.3 12.6. Standard Deviation 5.0. 4.1. Median.

  19. MA 153 - Quiz 14 (?10 minutes) Solution Statistics (out of 10 ...

    E-Print Network [OSTI]

    2011-10-28

    MA 153 - Quiz 14 (?10 minutes). Solution. Statistics (out of 10): Section. 36 42. Average 8.1 8.1. Max. 10. 9. Min. 4. 6. This is a take-home quiz. It should be ...

  20. MA 153 - Quiz 1 (5 minutes) Solution Statistics (out of 10): Section ...

    E-Print Network [OSTI]

    2011-09-08

    MA 153 - Quiz 1 (5 minutes). Solution. Statistics (out of 10): Section. 36 42. Average 5.5 6.7. Max. 9. 10. Min. 1. 1. 1. (2 points) Evaluate (-4)|6(-2) + 3|. Solution:.

  1. MA/STAT 25000 Syllabus Fall 2015 Problem Solving in Probability

    E-Print Network [OSTI]

    2015-08-28

    MA/STAT 25000. Syllabus. Fall 2015. Problem Solving in Probability. Meeting Times and Location: TR 3:30-4:20pm in UNIV 003. Instructor: Rachel Lynn. E-

  2. Ma,BonzongoandGao/UniversityofFlorida Characterization and Leachability of Coal Combustion Residues

    E-Print Network [OSTI]

    Ma, Lena

    Ma,BonzongoandGao/UniversityofFlorida Characterization and Leachability of Coal Combustion Residues an important solid waste in Florida, i.e., coal combustion residues (CCR) detailed in #2-4 of the current

  3. Optimization models in finance Ma 450 Darinka Dentcheva Fall 2014 darinka.dentcheva@stevens.edu

    E-Print Network [OSTI]

    Dentcheva, Darinka

    Optimization models in finance Ma 450 Darinka Dentcheva Fall 2014 darinka and dynamic optimization problems occurring in finance. We shall discuss linear and non-linear optimization models of finance, dynamic (sequential) optimization, optimization under uncertainty, mathematical models

  4. Examenrooster 2MA Bio-ingenieurswetenschappen: Cel-en Genbiotechnologie + Chemie en Bioprocestechnologie

    E-Print Network [OSTI]

    Einmahl, Uwe

    Examenrooster 2MA Bio-ingenieurswetenschappen: Cel- en Genbiotechnologie + Chemie en-ingenieurswetenschappen (PROMOTOR) Maandag 29/06/2015 (tijdstip en lokaal navragen op secretariaat IMDO) Medicinale Chemie (S

  5. MaRIE 1.0: The Matter-Radiation Interactions in Extremes Project...

    Office of Scientific and Technical Information (OSTI)

    The Matter-Radiation Interactions in Extremes Project, and the Challenge of Dynamic Mesoscale Imaging Citation Details In-Document Search Title: MaRIE 1.0: The Matter-Radiation...

  6. MA 30300 Test 2 Jul. 21, 2015 Your Name(Last, First) Show your ...

    E-Print Network [OSTI]

    2015-07-16

    MA 30300 Test 2. Jul. 21, 2015. Your Name(Last, First). Show your work, circle the answer! 1. Solve the initial value problem. y// + y = ?(t - 2?) cost, y(0) = 0, y/(0)

  7. Rapport sur ma mission au Vietnam du 12 au 17 Novembre 2007 Michel Waldschmidt

    E-Print Network [OSTI]

    Waldschmidt, Michel

    Rapport sur ma mission au Vietnam du 12 au 17 Novembre 2007 Michel Waldschmidt Le contexte. Les. Cette mission d'enseignement Vietnam2007.pdf> a bénéficié du soutien de Formath Vietnam

  8. Iterative Multivariate Regression Model for Correlated Responses Prediction S. Tom Au, Guangqin Ma, Rensheng Wang

    E-Print Network [OSTI]

    Greenberg, Albert

    Iterative Multivariate Regression Model for Correlated Responses Prediction S. Tom Au, Guangqin Ma- tive procedure to model multiple responses prediction into correlated multivariate predicting scheme, which is always favorable for responses separations in our multivariate prediction. We also point out

  9. Recommendations to the Campus Committee : an organizing strategy for the North End of Springfield, MA

    E-Print Network [OSTI]

    Banks, Peter Samuel

    2008-01-01

    The North End neighborhood of Springfield, MA is one of the poorest areas in the entire Commonwealth. For many years, agencies in the community have worked to provide basic services to the residents, who are primarily ...

  10. MA511: PRACTICE TEST 3 Answer all questions (each worth 4 ...

    E-Print Network [OSTI]

    2013-12-01

    MA511: PRACTICE TEST 3. Answer all questions (each worth 4 points). Show your working for any question not split into. (a),(b),(c),(d). No calculators or other ...

  11. MA 153 - Quiz 8 (?10 minutes) Solution Statistics (out of 10 ...

    E-Print Network [OSTI]

    2011-09-26

    MA 153 - Quiz 8 (?10 minutes). Solution. Statistics (out of 10): Section. 36. 42. Average 7.64 7. Max. 10. 10. Min. 4. 3. 1. (5 points) Garrett has found that the ...

  12. MA 111 Exam 2 Memo Exam 2 –Tuesday, March 5 – 8:30 pm SMITH ...

    E-Print Network [OSTI]

    2002-02-22

    MA 111 Exam 2 Memo. Exam 2 –Tuesday, March 5 – 8:30 pm SMITH 108. 1) Exam 2 covers sections 2.2 through 2.6 and the first three sections of chapter 3.

  13. Biochemical characterization of derivatives of MA-T12D11, a TAFI neutralizing antibody

    E-Print Network [OSTI]

    Develter, J.; Declerck, P. J.; Gils, A.

    2006-10-27

    ) a0 Monoclonal Antibodies (MA) towards human TAFI were raised in our lab. a0 MA-T12D11 inhibits the activation of TAFI by T/TM. Figure 1 Scheme of blood coagulation and fibrinolysis Introduction Objective Materials & Methods Conclusions 1 Bajzar... it in a clot lysis assay. 0 50 100 150 200 250 300 0.85 0.95 1.05 1.15 1.25 1.35 1.45 MA-T12D11 Fab-T12D11 CPI 0.9% NaCl Time (min) O D ( 4 0 5 n m ) -MA, Fab and CPI shorten clot lysis time significantly (i.e. 28.3 ? 2.9 min, 29.2 ? 10 min and 34...

  14. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  15. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  16. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  17. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  18. Hanford External Dosimetry Technical Basis Manual PNL-MA-842

    SciTech Connect (OSTI)

    Rathbone, Bruce A.

    2010-01-01

    The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNL’s Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNL’s Electronic Records & Information Capture Architecture (ERICA) database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2. Revision Log: Rev. 0 (2/25/2005) Major revision and expansion. Rev. 0.1 (3/12/2007) Updated Chapters 5, 6 and 9 to reflect change in default ring calibration factor used in HEDP dose calculation software. Factor changed from 1.5 to 2.0 beginning January 1, 2007. Pages on which changes were made are as follows: 5.23, 5.69, 5.78, 5.80, 5.82, 6.3, 6.5, 6.29, and 9.2. Rev 0.2 (8/28/2009) Updated Chapters 3, 5, 6, 8 and 9. Chapters 6 and 8 were significantly expanded. References in the Preface and Chapters 1, 2, 4, and 7 were updated to reflect updates to DOE documents. Approved by HPDAC on 6/2/2009. Rev 1.0 (1/1/2010) Major revision. Updated all chapters to reflect the Hanford site wide implementation on January 1, 2010 of new DOE requirements for occupational radiation protection. The new requirements are given in the June 8, 2007 amendment to 10 CFR 835 Occupational Radiation Protection (Federal Register, June 8, 2007. Title 10 Part 835. U.S., Code of Federal Regulations, Vol. 72, No. 110, 31904-31941). Revision 1.0 to the manual replaces ICRP 26 dosimetry concepts and terminology with ICRP 60 dosimetry concepts and terminology and replaces external dose conversion factors from ICRP 51 with those from ICRP 74 for use in measurement of operational quantities with dosimeters. Descriptions of dose algorithms and dosimeter response characteristics, and field performance were updated to reflect changes in the neutron quality factors used in the measurement of operational quantities.

  19. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  20. US SoAtl GA Site Consumption

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet) Wyoming963 1.969 1.979Coal Consumers inYear JanSales Type: Sales120NE MA

  1. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  2. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  3. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  4. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  5. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  6. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  7. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  8. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  9. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  10. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  11. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  12. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  13. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  14. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  15. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  16. Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes

    SciTech Connect (OSTI)

    Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wu, Kui; Sun, Bo; Zhang, Yonghui; Chen, Yu; Huo, Ziqiang; Hu, Qiang; Wang, Junxi; Zeng, Yiping; Li, Jinmin [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China); Lan, Ding [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080 (China)

    2014-06-15

    Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs.

  17. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  18. MA092 Geometria plana e analitica Comprimento da circunfer^encia -Area do circulo

    E-Print Network [OSTI]

    Gomes, Francisco A. M.

    MA092 ­ Geometria plana e anal´itica Comprimento da circunfer^encia - ´Area do c´irculo Francisco A) 51.758 voltas Francisco A. M. Gomes (UNICAMP - IMECC)MA092 ­ Geometria plana e anal´itica Setembro de´itica Setembro de 2014 5 / 14 ´Area do c´irculo C´irculo ´Area A ´area de um c´irculo de raio R ´e dada por AC

  19. Roadmap to MaRIE January 2015 (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTech ConnectSpeedingConnect(Conference)Factory:ColliderSampleMaRIERoadmap to MaRIE

  20. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  1. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  2. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  3. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  4. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  5. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  6. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  7. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  8. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  9. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  10. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  11. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  12. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  13. Nanocrystals for Solar Energy MaRIE--A Facility in the Making

    E-Print Network [OSTI]

    Nanocrystals for Solar Energy MaRIE--A Facility in the Making At the Chemical Movies 1663 LOS Mexico, Los Alamos National Laboratory was founded in 1943 to build the first atomic bomb. It remains Crystals in Solution A NEXT STEP FOR SOLAR SPOTLIGHT 28 Walking Ardi's Ground THE GEOLOGIST BEHIND THE 2009

  14. MA 266 Exam 2 Study Guide Exam 2 will cover material from ...

    E-Print Network [OSTI]

    Eddie

    2015-07-10

    MA 266 Exam 2 Study Guide. Exam 2 will cover material from lessons 11-20. This is sections 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8,. 4.1, 4.2, 4.3, and 6.1 in the textbook.

  15. OVERVIEW OF THE SDSS-IV MaNGA SURVEY: MAPPING NEARBY GALAXIES...

    Office of Scientific and Technical Information (OSTI)

    2000. With a typical integration time of 3 hr, MaNGA reaches a target r-band signal-to-noise ratio of 4-8 (sup -1 per 2'' fiber) at 23 AB mag arcsecsup -2, which is typical...

  16. MA 153 - Quiz 12 (?5 minutes) Solution Statistics (out of 10 ...

    E-Print Network [OSTI]

    2011-10-17

    MA 153 - Quiz 12 (?5 minutes). Solution. Statistics (out of 10): Section. 36 42. Average 8.4 8.4. Max. 10 10. Min. 4. 4. 1. Let A(1,0) and B(4,?4). (a) (2 points) Find ...

  17. Anchorages For FRPby M.A. Erki and S.H. Rizkalla ommercially available fiber-

    E-Print Network [OSTI]

    , and describes the products available commercially. Fiber reinforced plastic (FRP) rein- forcement has already-tensioning and post-tensioning. Wedge-type an- chorages were recently introduced for carbon and aramid fiber tendonsAnchorages For FRPby M.A. Erki and S.H. Rizkalla C ommercially available fiber- based reinforcement

  18. Mechanical properties of nanocrystalline materials M.A. Meyers *, A. Mishra, D.J. Benson

    E-Print Network [OSTI]

    Meyers, Marc A.

    Mechanical properties of nanocrystalline materials M.A. Meyers *, A. Mishra, D.J. Benson Department of Mechanical and Aerospace Engineering, Materials Science and Engineering Program, Mail Code 0411, University; accepted for publication 1 August 2005 Abstract The mechanical properties of nanocrystalline materials

  19. MA Thesis Timeline Steps in thesis process Fall Graduation Spring Graduation

    E-Print Network [OSTI]

    MA Thesis Timeline Steps in thesis process Fall Graduation Spring Graduation During the semester prior to the one in which you hope to defend the thesis and graduate: Locate First Reader Obtain April 1 October 15 Prospectus Write and submit the thesis prospectus to first reader by (Consider

  20. Relationship between Compost Stability and Extractable Organic Carbon L. Wu and L. Q. Ma*

    E-Print Network [OSTI]

    Ma, Lena

    Relationship between Compost Stability and Extractable Organic Carbon L. Wu and L. Q. Ma* ABSTRACT to the factEstablishing a simple yet reliable compost stability test is essential that NaOH-extractable organic carbon (OC) containsfor a better compost quality control and utilization efficiency. The objective

  1. Primitive Os and 2316 Ma age for marine shale: implications for Paleoproterozoic glacial events and

    E-Print Network [OSTI]

    Bekker, Andrey

    Primitive Os and 2316 Ma age for marine shale: implications for Paleoproterozoic glacial events from carbonaceous shale that straddles the boundary between the Rooihoogte and Timeball Hill formations shales, so that their subsequent exposure and weathering was unable to provide a significant amount

  2. En quoi Turing a-t-il chang ma vie de chercheur ?

    E-Print Network [OSTI]

    van Tiggelen, Bart

    1912-2012 ALAN TURING En quoi Turing a-t-il changé ma vie de chercheur ? PIERRE LESCANNE (LIP, CNRS scientifique génial, prolifique et polyvalent. Que se serait-il passé alors ? 1Les machines à computer d'Alan Turing, Bulletin de SPECIF n63 (avril 2010) #12;

  3. Scalable Storage Scheme from Forward Key Rotation Chunbo Ma1,2

    E-Print Network [OSTI]

    International Association for Cryptologic Research (IACR)

    Scalable Storage Scheme from Forward Key Rotation Chunbo Ma1,2 , Jun Ao3 , and Jianhua Li1 1 School@263.net Abstract. Kallahalla et al. presented a RSA-based Forward Key Rotation mechanism in secure storage present a Forward Key Rotation storage scheme based on discrete logarithm and discuss its security

  4. Characterization and In-Situ Ion-Irradiation of MA957 ODS Steel Djamel Kaoumi1

    E-Print Network [OSTI]

    Motta, Arthur T.

    Characterization and In-Situ Ion-Irradiation of MA957 ODS Steel Djamel Kaoumi1 , Arthur Motta1 Laboratory, Argonne, IL 060493, USA INTRODUCTION Oxide dispersion strengthened (ODS) Ferritic/Martensitic steels produced by mechanical alloying with Y2O3 particles are considered as possible cladding materials

  5. BBTR: an unstructured triangular mesh generator Andrea M.A. Barbera, Stefano Berrone

    E-Print Network [OSTI]

    Ceragioli, Francesca

    BBTR: an unstructured triangular mesh generator Andrea M.A. Barbera, Stefano Berrone Abstract In this paper we give a detailed description of the use of a MatlabR triangular mesh generator called BBTR produced by the mesh generator allow to set general boundary conditions. The code BBTR results

  6. New compact hohlraum configuration research at the 1.7 MA Z-pinch generator

    SciTech Connect (OSTI)

    Kantsyrev, V. L. Shrestha, I. K.; Esaulov, A. A.; Safronova, A. S.; Shlyaptseva, V. V.; Osborne, G. C.; Astanovitsky, A. L.; Weller, M. E.; Stafford, A.; Schultz, K. A.; Cooper, M. C.; Chuvatin, A. S.; Rudakov, L. I.; Velikovich, A. L.; Cuneo, M. E.; Jones, B.; Vesey, R. A.

    2014-12-15

    A new compact Z-pinch x-ray hohlraum design with parallel-driven x-ray sources was experimentally demonstrated in a full configuration with a central target and tailored shine shields (to provide a symmetric temperature distribution on the target) at the 1.7 MA Zebra generator. This presentation reports on the joint success of two independent lines of research. One of these was the development of new sources – planar wire arrays (PWAs). PWAs turned out to be a prolific radiator. Another success was the drastic improvement in energy efficiency of pulsed-power systems, such as the Load Current Multiplier (LCM). The Zebra/LCM generator almost doubled the plasma load current to 1.7 MA. The two above-mentioned innovative approaches were used in combination to produce a new compact hohlraum design for ICF, as jointly proposed by SNL and UNR. Good agreement between simulated and measured radiation temperature of the central target is shown. Experimental comparison of PWAs with planar foil liners (PFL) - another viable alternative to wire array loads at multi-MA generators show promising data. Results of research at the University of Nevada Reno allowed for the study of hohlraum coupling physics at University-scale generators. The advantages of new hohlraum design applications for multi-MA facilities with W or Au double PWAs or PFL x-ray sources are discussed.

  7. mise jour: 09/12/2009 Rapport de ma mission au Pakistan

    E-Print Network [OSTI]

    Waldschmidt, Michel

    1 mise à jour: 09/12/2009 Rapport de ma mission au Pakistan École de recherche CIMPA du 22 au 28://www.lums.edu.pk/> pour y donner une conférence dans le cadre de French Science Tour in Pakistan Science Tour in Pakistan. · Samedi 28 février, 8 exposés organisés par Juergen Herzog permettant à des

  8. mise jour: 30/03/2009 Rapport de ma mission au Pakistan

    E-Print Network [OSTI]

    Waldschmidt, Michel

    1 mise à jour: 30/03/2009 Rapport de ma mission au Pakistan École de recherche CIMPA du 22 au 28://www.lums.edu.pk/> pour y donner une conférence dans le cadre de French Science Tour in Pakistan Science Tour in Pakistan. · Samedi 28 février, 8 exposés organisés par Juergen Herzog permettant à des

  9. The water-benzene interaction: Insight from electronic structure theories Jie Ma,1,2,3

    E-Print Network [OSTI]

    Alfè, Dario

    The water-benzene interaction: Insight from electronic structure theories Jie Ma,1,2,3 Dario Alfè,2 theories is challenging. Here we assess the ability of a variety of theories to describe a water-benzene- tween water and benzene. Water benzene is an interesting model system because it is a reasonably small

  10. Molecular motors and membrane trac in Dictyostelium Shuo Ma, Petra Fey, Rex L. Chisholm *

    E-Print Network [OSTI]

    Chisholm, Rex L.

    Review Molecular motors and membrane tra¤c in Dictyostelium Shuo Ma, Petra Fey, Rex L. Chisholm on the cytoskeleton and their associated molecular motors. The myosin family of motors, especially the unconventional the early steps of phagocytosis. Members of the kinesin and dynein motor families, which mediate transport

  11. Journalism Concentration: Grady College MA Non-Thesis Program Planning Form

    E-Print Network [OSTI]

    Arnold, Jonathan

    Journalism Concentration: Grady College MA Non-Thesis Program Planning Form Student: Advisor Readings in Mass Communication JRMC 8350 ( ) Special Topics in Journalism JRMC 8025 ( ) Mass Media Law JRMC 8365 ( ) Media Economics JRMC 7355 ( ) Health and Medical Journalism JRMC 7356 ( ) Advanced Health

  12. Ma thse en 2 minutes Sophie Tourret quipe Capp Dir : N. Peltier, M. Echenim

    E-Print Network [OSTI]

    Quoi Comment Pourquoi Ma thèse en 2 minutes Sophie Tourret ­ équipe Capp Dir : N. Peltier, M 2 minutes Sophie Tourret ­ équipe Capp Dir : N. Peltier, M. Echenim #12;Génération d ­ équipe Capp Dir : N. Peltier, M. Echenim #12;Génération d'impliqués premiers en logique équationnelle

  13. AABBSSTTRRAACCTT MA, RUIQI. The Effect of In-Vehicle Automation and Reliability on Driver Situation

    E-Print Network [OSTI]

    Kaber, David B.

    AABBSSTTRRAACCTT MA, RUIQI. The Effect of In-Vehicle Automation and Reliability on Driver Situation by automation and in- vehicle device use. Specifically, this study investigated the implications of adaptive; investigate the effect of varying reliability of in-vehicle automation (navigation aids) on driver SA

  14. Institutions and Cross-border Mergers and Acquisitions (M&A) Value Creation 

    E-Print Network [OSTI]

    Zhu, Hong

    2012-02-14

    little effect on cross-border M&A value creation. We therefore still do not understand the processes behind cross-border M&As. In this is dissertation I examine the main effects of host country regulatory, economic and physical infrastructure...

  15. Hybrid Process Algebra P.J.L. Cuijpers # M.A. Reniers

    E-Print Network [OSTI]

    Cuijpers, Pieter

    Hybrid Process Algebra P.J.L. Cuijpers # M.A. Reniers Eindhoven University of Technology (TU/e) Den Dolech 2 5600 MB Eindhoven, The Netherlands Abstract We develop an algebraic theory, called hybrid process algebra (HyPA), for the de­ scription and analysis of hybrid systems. HyPA is an extension

  16. Hybrid Process Algebra P.J.L. Cuijpers M.A. Reniers

    E-Print Network [OSTI]

    Cuijpers, Pieter

    Hybrid Process Algebra P.J.L. Cuijpers M.A. Reniers Eindhoven University of Technology (TU/e) Den Dolech 2 5600 MB Eindhoven, The Netherlands Abstract We develop an algebraic theory, called hybrid process algebra (HyPA), for the de- scription and analysis of hybrid systems. HyPA is an extension

  17. Nanocrystals for Solar Energy MaRIE--A Facility in the Making

    E-Print Network [OSTI]

    's efforts to minimize environmental impacts. The new Center for Advanced Solar Photophysics, led by Victor solar photovoltaics (solar panels) that are both cheaper and more efficient and therefore an affordableNanocrystals for Solar Energy MaRIE--A Facility in the Making At the Chemical Movies 1663 LOS

  18. WIND TURBINE SITING IN AN URBAN ENVIRONMENT: THE HULL, MA 660 KW TURBINE

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    1 WIND TURBINE SITING IN AN URBAN ENVIRONMENT: THE HULL, MA 660 KW TURBINE J. F. Manwell, J. G. Mc turbine at Windmill Point in Hull, Massachusetts represents a high point in the long history of wind, through the installation of a 40 kW Enertech machine in the 1980's to the installation of the new turbine

  19. Neural Modeling of Non-Linear Processes: Relevance of the Takens-Ma~ne Theorem

    E-Print Network [OSTI]

    Masulli, Francesco

    coupled to a 150 MW steam turbine. 1 Introduction The problem of controlling systems characterized by non to be managed (on a typical steam turbine they are about 576,000/hour). Moreover, so far, there are no availableNeural Modeling of Non-Linear Processes: Relevance of the Takens-Ma~n´e Theorem Francesco Masulli

  20. Convexity and Fast Speech Extraction by Split Bregman Method , Wenye Ma2

    E-Print Network [OSTI]

    Ferguson, Thomas S.

    Convexity and Fast Speech Extraction by Split Bregman Method Meng Yu1 , Wenye Ma2 , Jack Xin1@math.uci.edu, sjo@math.ucla.edu Abstract A fast speech extraction (FSE) method is presented using con- vex noise in the output. In this paper, a new fast time domain speech extraction (FSE) method is proposed

  1. Accessing Absence Summary Reports New report available to managers of MaPS and Support Staff

    E-Print Network [OSTI]

    Calgary, University of

    Appendix C Accessing Absence Summary Reports New report available to managers of MaPS and Support Staff What is the new report? To further assist managers in their efforts to manage their workforce, an absence summary report is being made available to allow you to quickly look up sick leave and medical

  2. Walleye pollock (Theragra chalcogram-ma) and Pacific herring (Clupea pallasi)

    E-Print Network [OSTI]

    that inhabit the north- eastern Pacific Ocean rim. Both species are important components of marine bird, mammal482 Walleye pollock (Theragra chalcogram- ma) and Pacific herring (Clupea pallasi) are forage fish and Speckman, 1997;Anderson and Piatt,1999).Young- of-the-year (YOY) walleye pollock and YOY Pacific herring

  3. Company Name: Blue Cross Blue Shield of MA Web Site: www.bluecrossma.com

    E-Print Network [OSTI]

    New Hampshire, University of

    Company Name: Blue Cross Blue Shield of MA Web Site: www.bluecrossma.com Industry: Healthcare Brief Company Overview: Headquartered in Boston, Blue Cross Blue Shield of Massachusetts provides comprehensive-level position: Please visit www.bluecrossma.com/careers. With almost 3 million members, Blue Cross Blue Shield

  4. Proxy Key Re-encapsulation Mechanism for Group Communications Chunbo Ma and Jun Ao

    E-Print Network [OSTI]

    International Association for Cryptologic Research (IACR)

    - 1 - Proxy Key Re-encapsulation Mechanism for Group Communications Chunbo Ma and Jun Ao School. China machunbo@guet.edu.cn Abstract. Many practical applications use hybrid encryption mechanism to deal scheme is poor. The key encapsulation is a crucial part in hybrid encryption mechanism, which allows

  5. redMaGiC: Selecting Luminous Red Galaxies from the DES Science Verification Data

    E-Print Network [OSTI]

    Rozo, E; Abate, A; Bonnett, C; Crocce, M; Davis, C; Hoyle, B; Leistedt, B; Peiris, H V; Wechsler, R H; Abbott, T; Abdalla, F B; Banerji, M; Bauer, A H; Benoit-Lévy, A; Bernstein, G M; Bertin, E; Brooks, D; Buckley-Geer, E; Burke, D L; Capozzi, D; Rosell, A Carnero; Carollo, D; Kind, M Carrasco; Carretero, J; Castander, F J; Childress, M J; Cunha, C E; D'Andrea, C B; Davis, T; DePoy, D L; Desai, S; Diehl, H T; Dietrich, J P; Doel, P; Eifler, T F; Evrard, A E; Neto, A Fausti; Flaugher, B; Fosalba, P; Frieman, J; Gaztanaga, E; Gerdes, D W; Glazebrook, K; Gruen, D; Gruendl, R A; Honscheid, K; James, D J; Jarvis, M; Kim, A G; Kuehn, K; Kuropatkin, N; Lahav, O; Lidman, C; Lima, M; Maia, M A G; March, M; Martini, P; Melchior, P; Miller, C J; Miquel, R; Mohr, J J; Nichol, R C; Nord, B; O'Neill, C R; Ogando, R; Plazas, A A; Romer, A K; Roodman, A; Sako, M; Sanchez, E; Santiago, B; Schubnell, M; Sevilla-Noarbe, I; Smith, R C; Soares-Santos, M; Sobreira, F; Suchyta, E; Swanson, M E C; Thaler, J; Thomas, D; Uddin, S; Vikram, V; Walker, A R; Wester, W; Zhang, Y; da Costa, L N

    2015-01-01

    We introduce redMaGiC, an automated algorithm for selecting Luminous Red Galaxies (LRGs). The algorithm was specifically developed to minimize photometric redshift uncertainties in photometric large-scale structure studies. redMaGiC achieves this by self-training the color-cuts necessary to produce a luminosity-thresholded LRG sample of constant comoving density. We demonstrate that redMaGiC photozs are very nearly as accurate as the best machine-learning based methods, yet they require minimal spectroscopic training, do not suffer from extrapolation biases, and are very nearly Gaussian. We apply our algorithm to Dark Energy Survey (DES) Science Verification (SV) data to produce a redMaGiC catalog sampling the redshift range $z\\in[0.2,0.8]$. Our fiducial sample has a comoving space density of $10^{-3}\\ (h^{-1} Mpc)^{-3}$, and a median photoz bias ($z_{spec}-z_{photo}$) and scatter $(\\sigma_z/(1+z))$ of 0.005 and 0.017 respectively. The corresponding $5\\sigma$ outlier fraction is 1.4%. We also test our algorit...

  6. Job opening: Senior Software Engineer (Cambridge, MA) CellProfiler opensource software

    E-Print Network [OSTI]

    Carpenter, Anne E.

    Job opening: Senior Software Engineer (Cambridge, MA) CellProfiler opensource software Cell Platform) at the Broad Institute of Harvard and MIT has an opening for a highly motivated senior software functions from microscopy images. We seek a software engineer with a strong record of accomplishment

  7. Paleomagnetism of the southwestern U.S.A. recorded by 05 Ma igneous rocks

    E-Print Network [OSTI]

    Johnson, Catherine Louise

    Constable, Catherine L. Johnson, Anthony A. P. Koppers, Winter R. Miller, and Hubert Staudigel ScrippsPaleomagnetism of the southwestern U.S.A. recorded by 0­5 Ma igneous rocks Lisa Tauxe, Catherine. Constable, C. L. Johnson, A. A. P. Koppers, W. R. Miller, and H. Staudigel, Paleomagnetism

  8. Seismic Data Reconstruction via Matrix Yi Yang, Jianwei Ma and Stanley Osher

    E-Print Network [OSTI]

    Ferguson, Thomas S.

    1 Seismic Data Reconstruction via Matrix Completion Yi Yang, Jianwei Ma and Stanley Osher Abstract In seismic processing, one goal is to recover missing traces when the data is sparsely and incom- pletelyFit) are discussed in this paper. The seismic data can then be recovered by the conversion of the completed matrix

  9. Debris flows from small catchments of the Ma Ha Tuak Range, metropolitan Phoenix, Arizona

    E-Print Network [OSTI]

    Dorn, Ron

    Debris flows from small catchments of the Ma Ha Tuak Range, metropolitan Phoenix, Arizona Ronald I from tiny but steep mountain catchments throughout metropolitan Phoenix, Arizona, USA. Urban growth downtown Phoenix, was selected to determine the feasibility of using the varnish microlaminations (VML

  10. WSU's M.A. in aging studies equips students with the necessary skills to

    E-Print Network [OSTI]

    WSU's M.A. in aging studies equips students with the necessary skills to meet the growing needs of America's aging population. Graduates will be well equipped for a diverse range of career opportunities from aging research and counseling to employment in nursing facilities, assisted-living communities

  11. Health & Medical Journalism Concentration: Grady College MA Non-Thesis Program Planning Form

    E-Print Network [OSTI]

    Arnold, Jonathan

    Health & Medical Journalism Concentration: Grady College MA Non-Thesis Program Planning Form Methodology in Mass Communication 3. JRMC 7355 ( ) Health and Medical Journalism 4. JRMC 7356 ( ) Advanced Health and Medical Journalism Co-requisite for Concentration ­ for students with limited undergraduate

  12. The EOS is a fundamental descrip5on of nuclear ma7er. For isospin asymmetric ma7er the symmetry energy term is of prime importance. The density dependence of the symmetry energy impacts

    E-Print Network [OSTI]

    de Souza, Romualdo T.

    of the asymmetry term in three sets of calcu- lations provides a contribution to the symmetry energy per nucleonThe EOS is a fundamental descrip5on of nuclear ma7er. For isospin asymmetric ma7er the symmetry energy term is of prime importance. The density dependence

  13. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  14. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  15. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  16. Effects of diagenesis on the Nd-isotopic composition of black shales from the 420 Ma Utica Shale Magnafacies

    E-Print Network [OSTI]

    Basu, Asish R.

    Effects of diagenesis on the Nd-isotopic composition of black shales from the 420 Ma Utica Shale Abstract The Utica black shales were deposited in the Taconic Foreland basin 420 Ma ago. The organic matter in these shales is of marine origin and the timing of deposition of these shales has been constrained

  17. Third-order gas-liquid phase transition and the nature of Andrews critical Tian Ma and Shouhong Wang

    E-Print Network [OSTI]

    Wang, Shouhong

    Third-order gas-liquid phase transition and the nature of Andrews critical point Tian Ma-order gas-liquid phase transition and the nature of Andrews critical point Tian Ma1 and Shouhong Wang2 1 is to study the nature of the Andrews critical point in the gas-liquid transition in a physical

  18. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  19. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  20. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  1. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  2. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  3. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  4. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  5. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  6. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  7. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  8. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ) In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells

  9. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  10. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Florida, University of

    , creating both electron traps and increasing electron tunneling through the defect states [4Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron 2011 a b s t r a c t AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative

  11. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  12. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  13. Atomistic description of the electronic structure of InxGa1xAs alloys and InAsGaAs superlattices

    E-Print Network [OSTI]

    Kent, Paul

    quantum-wells15,20 (InxGa1 xAs)n /InP on InP and (InxGa1 xAs)n /GaAs on GaAs, and v GaAs-embedded InAs quantum dots.21­23 We wish to provide a uniform the- oretical description of the electronic structure-period dependence of the band offsets and interband transitions of InAs/GaAs systems on InP and GaAs substrates. DOI

  14. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 m; accepted 3 June 2013; published online 19 June 2013) InGaN/GaN light-emitting diodes (LEDs) with graded , which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which

  15. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Pala, Nezih

    that the 1/f noise in GaN/AlGaN HFETs might be caused by electron tunneling from the channel to the traps was practically independent of the frequency of analysis. The model linking this maximum to the electron tunneling Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics

  16. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  17. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  18. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    be well suited for exploitation of long wavelength quantum dot and dilute nitride technology, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser. Introduction: Lasers based on the GaAs materials system offer advan- tages over their InP counterparts, such as the use

  19. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  20. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  1. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

    E-Print Network [OSTI]

    Florida, University of

    for spacecraft and other long-term sensing applications. However, hydrogen is a dangerous gas for storage for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cellSnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

  2. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  3. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  4. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  5. MA 48100

    E-Print Network [OSTI]

    $author.value

    Course Materials. Section, Type, Title, Author. ALL, Other, Course materials. Important Notes. ADA policies: please see our ADA Information page for more ...

  6. Tammy Ma

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    why she loves science, her belief in giving back, and advice for younger scientists. Motivation and work ethic My mother, unfortunately, didn't get the chance to finish high school...

  7. MA 15300

    E-Print Network [OSTI]

    $author.value

    ... IN 47907 USA, 765-494-4600. An equal access/equal opportunity university. Accessibility issues? Contact the Web Editor (webeditor@math.purdue.edu).

  8. MA 26500

    E-Print Network [OSTI]

    $author.value

    College of Science · Department of Mathematics. Search. About Us · Giving to Mathematics · About Us · Diversity Statement · Job Listings · Newsletter · People.

  9. MA 13700

    E-Print Network [OSTI]

    Course Coordinator: Renee Roames; ph: 494-1929; office: MATH 808; email: rroames@purdue.edu; Instructor: Gabe Smith; email: smith522@math.purdue.

  10. MA 161

    E-Print Network [OSTI]

    $author.value

    Math Help Room · University Exam Schedules · University Course Catalog · University Course Schedule · Undergraduate Advisors · Undergraduate Plans of

  11. MA 166

    E-Print Network [OSTI]

    Projection Booth. Video Lecture Cabinet. 10' Chalkboard. Audio Recording Capabilities. Voice Ampli?cation. Wheelchair seaiing (1). , theater lighting stage:.

  12. MA 16020

    E-Print Network [OSTI]

    $author.value

    FINAL EXAM - WEDNESDAY, 8/5 -- ALL STUDENTS; On Campus Classroom Sections. The FINAL Exam INFO -- will be in HAMP 3144 from 3:30pm to 5:30pm.

  13. MA 220

    E-Print Network [OSTI]

    Dec 10, 2007 ... m'er aisle of every fourth row. ev. 7-7-99. 0 PM aw. ' 4. Exam. LAMBERT FIELDHQUSE EINALEXAMINATIDNQ QFATING ARRANGEMENT.

  14. MA 15910

    E-Print Network [OSTI]

    ... of Elliott Hall balcony · Exam 3 Answers; FINAL EXAM; Tuesday, 12/16; 8:00 AM - 10:00 AM; Final Exam Memo · Lambert Fieldhouse · Practice Final Exam ...

  15. MA 51500

    E-Print Network [OSTI]

    $author.value

    An introduction to the mathematical tools and techniques of modern finance theory, in the context of Black-Scholes option pricing. Brownian motion and its ...

  16. MA.2

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and MyersHr. Anthony V. Andolina:I 1 '\Ll 1vr*M OM'

  17. Ma Philippine

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnical Report:Speeding accessby aLED Street LightingFrom theHighI _s - "U N C- . . . .

  18. MaGe - a Geant4-based Monte Carlo framework for low-background experiments

    E-Print Network [OSTI]

    Yuen-Dat Chan; Jason A. Detwiler; Reyco Henning; Victor M. Gehman; Rob A. Johnson; David V. Jordan; Kareem Kazkaz; Markus Knapp; Kevin Kroninger; Daniel Lenz; Jing Liu; Xiang Liu; Michael G. Marino; Akbar Mokhtarani; Luciano Pandola; Alexis G. Schubert; Claudia Tomei

    2008-02-06

    A Monte Carlo framework, MaGe, has been developed based on the Geant4 simulation toolkit. Its purpose is to simulate physics processes in low-energy and low-background radiation detectors, specifically for the Majorana and Gerda $^{76}$Ge neutrinoless double-beta decay experiments. This jointly-developed tool is also used to verify the simulation of physics processes relevant to other low-background experiments in Geant4. The MaGe framework contains simulations of prototype experiments and test stands, and is easily extended to incorporate new geometries and configurations while still using the same verified physics processes, tunings, and code framework. This reduces duplication of efforts and improves the robustness of and confidence in the simulation output.

  19. On Larkin-Imry-Ma State of 3He-A in Aerogel

    E-Print Network [OSTI]

    G. E. Volovik

    2007-10-02

    Superfluid 3He-A shares the properties of spin nematic and chiral orbital ferromagnet. Its order parameter is characterized by two vectors d and l. This doubly anisotropic superfluid, when it is confined in aerogel, represents the most interesting example of a system with continuous symmetry in the presence of random anisotropy disorder. We discuss the Larkin-Imry-Ma state, which is characterized by the short-range orientational order of the vector l, while the long-range orientational order is destroyed by the collective action of the randomly oriented aerogel strings. On the other hand, sufficiently large regular anisotropy produced either by the deformation of the aerogel or by applied superflow suppresses the Larkin-Imry-Ma effect leading to the uniform orientation of the vector l. This interplay of regular and random anisotropy allows us to study many different effects.

  20. On Larkin-Imry-Ma State of 3He-A in Aerogel

    E-Print Network [OSTI]

    Volovik, G E

    2007-01-01

    Superfluid 3He-A shares the properties of spin nematic and chiral orbital ferromagnet. Its order parameter is characterized by two vectors d and l. This doubly anisotropic superfluid, when it is confined in aerogel, represents the most interesting example of a system with continuous symmetry in the presence of random anisotropy disorder. We discuss the Larkin-Imry-Ma state, which is characterized by the short-range orientational order of the vector l, while the long-range orientational order is destroyed by the collective action of the randomly oriented aerogel strings. On the other hand, sufficiently large regular anisotropy produced either by the deformation of the aerogel or by applied superflow destroys the Larkin-Imry-Ma effect leading to the uniform orientation of the vector l. This interplay of regular and random anisotropy allows us to study many different effects.

  1. Structure of Oxide Nanoparticles in Fe-16Cr MA/ODS Ferritic Steel

    SciTech Connect (OSTI)

    Hsiung, L; Fluss, M; Kimura, A

    2010-04-06

    Oxide nanoparticles in Fe-16Cr ODS ferritic steel fabricated by mechanical alloying (MA) method have been examined using high-resolution transmission electron microscopy (HRTEM) techniques. A partial crystallization of oxide nanoparticles was frequently observed in as-fabricated ODS steel. The crystal structure of crystalline oxide particles is identified to be mainly Y{sub 4}Al{sub 2}O{sub 9} (YAM) with a monoclinic structure. Large nanoparticles with a diameter larger than 20 nm tend to be incoherent and have a nearly spherical shape, whereas small nanoparticles with a diameter smaller than 10 nm tend to be coherent or semi-coherent and have faceted boundaries. The oxide nanoparticles become fully crystallized after prolonged annealing at 900 C. These results lead us to propose a three-stage formation mechanism of oxide nanoparticles in MA/ODS steels.

  2. E D U C A T I O N M.A. in Journalism

    E-Print Network [OSTI]

    Mohaghegh, Shahab

    E D U C A T I O N M.A. in Journalism University of Missouri-Columbia School of Journalism 1993 B.A. in Journalism University of Missouri-Columbia School of Journalism 1987 A C A D E M I C E X P E R I E N C E A S S I S T A N T P R O F E S S O R (2009-present) PERLEY ISAAC REED SCHOOL OF JOURNALISM, WEST VIRGINIA

  3. redMaPPer. I. Algorithm and SDSS DR8 catalog

    SciTech Connect (OSTI)

    Rykoff, E. S.; Rozo, E.; Reddick, R.; Wechsler, R. H.; Busha, M. T.; Cunha, C. E.; Finoguenov, A.; Evrard, A.; Koester, B. P.; Hao, J.; Nord, B.; Leauthaud, A.; Pierre, M.; Sadibekova, T.; Sheldon, E. S.

    2014-04-20

    We describe redMaPPer, a new red sequence cluster finder specifically designed to make optimal use of ongoing and near-future large photometric surveys. The algorithm has multiple attractive features: (1) it can iteratively self-train the red sequence model based on a minimal spectroscopic training sample, an important feature for high-redshift surveys. (2) It can handle complex masks with varying depth. (3) It produces cluster-appropriate random points to enable large-scale structure studies. (4) All clusters are assigned a full redshift probability distribution P(z). (5) Similarly, clusters can have multiple candidate central galaxies, each with corresponding centering probabilities. (6) The algorithm is parallel and numerically efficient: it can run a Dark Energy Survey-like catalog in ?500 CPU hours. (7) The algorithm exhibits excellent photometric redshift performance, the richness estimates are tightly correlated with external mass proxies, and the completeness and purity of the corresponding catalogs are superb. We apply the redMaPPer algorithm to ?10, 000 deg{sup 2} of SDSS DR8 data and present the resulting catalog of ?25,000 clusters over the redshift range z in [0.08, 0.55]. The redMaPPer photometric redshifts are nearly Gaussian, with a scatter ? {sub z} ? 0.006 at z ? 0.1, increasing to ? {sub z} ? 0.02 at z ? 0.5 due to increased photometric noise near the survey limit. The median value for |?z|/(1 + z) for the full sample is 0.006. The incidence of projection effects is low (?5%). Detailed performance comparisons of the redMaPPer DR8 cluster catalog to X-ray and Sunyaev-Zel'dovich catalogs are presented in a companion paper.

  4. OVERVIEW OF THE SDSS-IV MaNGA SURVEY: MAPPING NEARBY GALAXIES AT APACHE POINT OBSERVATORY

    SciTech Connect (OSTI)

    Bundy, Kevin; Bershady, Matthew A.; Wake, David A.; Tremonti, Christy; Diamond-Stanic, Aleksandar M.; Law, David R.; Cherinka, Brian; Yan, Renbin; Sánchez-Gallego, José R.; Drory, Niv; MacDonald, Nicholas; Weijmans, Anne-Marie; Thomas, Daniel; Masters, Karen; Coccato, Lodovico; Aragón-Salamanca, Alfonso; Avila-Reese, Vladimir; Badenes, Carles; Falcón-Barroso, Jésus; Belfiore, Francesco; and others

    2015-01-01

    We present an overview of a new integral field spectroscopic survey called MaNGA (Mapping Nearby Galaxies at Apache Point Observatory), one of three core programs in the fourth-generation Sloan Digital Sky Survey (SDSS-IV) that began on 2014 July 1. MaNGA will investigate the internal kinematic structure and composition of gas and stars in an unprecedented sample of 10,000 nearby galaxies. We summarize essential characteristics of the instrument and survey design in the context of MaNGA's key science goals and present prototype observations to demonstrate MaNGA's scientific potential. MaNGA employs dithered observations with 17 fiber-bundle integral field units that vary in diameter from 12'' (19 fibers) to 32'' (127 fibers). Two dual-channel spectrographs provide simultaneous wavelength coverage over 3600-10300 Å at R ? 2000. With a typical integration time of 3 hr, MaNGA reaches a target r-band signal-to-noise ratio of 4-8 (Å{sup –1} per 2'' fiber) at 23 AB mag arcsec{sup –2}, which is typical for the outskirts of MaNGA galaxies. Targets are selected with M {sub *} ? 10{sup 9} M {sub ?} using SDSS-I redshifts and i-band luminosity to achieve uniform radial coverage in terms of the effective radius, an approximately flat distribution in stellar mass, and a sample spanning a wide range of environments. Analysis of our prototype observations demonstrates MaNGA's ability to probe gas ionization, shed light on recent star formation and quenching, enable dynamical modeling, decompose constituent components, and map the composition of stellar populations. MaNGA's spatially resolved spectra will enable an unprecedented study of the astrophysics of nearby galaxies in the coming 6 yr.

  5. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  6. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  7. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  8. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  9. Parallel and Distributed Computing Systems (PDCS) 2007, Cambridge, MA21 Nov 2007 1 The Impact of Error in User-Provided

    E-Print Network [OSTI]

    Jones, William Michael

    Parallel and Distributed Computing Systems (PDCS) 2007, Cambridge, MA21 Nov 2007 1 The Impact://www.parl.clemson.edu/beosim #12;Parallel and Distributed Computing Systems (PDCS) 2007, Cambridge, MA21 Nov 2007 2 Multi-site Co-allocation #12;Parallel and Distributed Computing Systems (PDCS) 2007, Cambridge, MA21 Nov 2007 3 Scheduling w

  10. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  11. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  12. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  13. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing, E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Chen, Weixi [State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Ding, Ying, E-mail: Ying.Ding@glasgow.ac.uk [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  14. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  15. Electrical degradation mechanisms of RF power GaAs PHEMTs

    E-Print Network [OSTI]

    Villanueva, Anita A. (Anita Ariel), 1978-

    2007-01-01

    GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability ...

  16. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  17. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  18. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  19. Whose parking space is it? : managing residential parking in the context of urban growth : case study of Cambridge, MA

    E-Print Network [OSTI]

    Chang, Winnie C

    2014-01-01

    In the context of urban growth, how can a city approach residential parking issues? Cambridge, MA is experiencing rapid growth in real estate development and investment, shifts in demographics and travel behavior. How do ...

  20. Impact of Human Capital on the Organization Performance Dr. Ahmad I. AL-Ma'ani -Philadelphia University Jordan

    E-Print Network [OSTI]

    Impact of Human Capital on the Organization Performance Dr. Ahmad I. AL-Ma'ani - Philadelphia University ­ Jordan almaani100@yahoo.com & Dr. Nasser "M. S" Jaradat ­ Philadelphia University ­ Jordan

  1. Vehicle Technologies Office Merit Review 2015: MA3T—Modeling Vehicle Market Dynamics with Consumer Segmentation

    Broader source: Energy.gov [DOE]

    Presentation given by Oak Ridge National Laboratory at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about MA3T—modeling...

  2. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  3. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    SciTech Connect (OSTI)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Soluyanov, Andrei A.; Timoshina, Nailya Kh. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation); Gudovskikh, Alexander S. [Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to ?190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from ?20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

  4. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  5. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01

    assuming the material growth technology allows for all ofand a relatively immature growth technology, as well as theof the art for InGaN growth technology. Epitaxial growth of

  6. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Sztein, Alexander, E-mail: asztein@umail.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9?W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  7. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors 

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31

    production is projected to consume ~100,000 wafers per year by 2015 (Yole Development, “Power GaN – 2012 Edition”), this manufacturing breakthrough represents potential savings of ~$17 million per year....

  8. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

    E-Print Network [OSTI]

    Florida, University of

    2011; published online 21 March 2011 A subnanometer thick interfacial oxide layer present between used to characterize a Ni/AlGaN interfacial oxide layer with subnanometer thickness. The semiconducting

  9. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigör, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  10. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect (OSTI)

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Sfaxi, L. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Universite de Sousse Faculte des Sciences de Monastir, Avenue de l'Environnement 5019 Monastir (Tunisia); Bru-Chevallier, C. [Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  11. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  12. EVERETT L. REDMOND II Senior Director, Policy Development

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and we commend the DOE for taking this action. Over the past 70 years, applications of nuclear fission - including research, medical and industrial uses, naval propulsion and...

  13. An Analysis of Wind Power Development in the Town of Hull, MA

    SciTech Connect (OSTI)

    Adams, Christopher

    2013-06-30

    Over the past three decades the Town of Hull, MA has solidified its place in U.S. wind energy history through its leadership in community-based generation. This is illustrated by its commissioning of the first commercial-scale wind turbine on the Atlantic coastline, the first suburban-sited turbine in the continental United States, pursuit of community-based offshore wind, and its push toward creating an energy independent community. The town's history and demographics are briefly outlined, followed by experience in projects to provide wind power, including pre-construction and feasibility efforts, financial aspects, and market/industry factors.

  14. MaRIE: A Presentation to the Science Campaigns Round Robin (Conference) |

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing(Journalspectroscopy ofArticle)SciTech Connect Conference: MaRIE: A Presentation to

  15. MaRIE: A facility for time-dependent materials science at the mesoscale

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing(Journalspectroscopy ofArticle)SciTech Connect Conference: MaRIE: A Presentation

  16. Roadmap to MaRIE (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTech ConnectSpeedingConnect(Conference)Factory:ColliderSampleMaRIE Citation Details

  17. Roadmap to MaRIE (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTech ConnectSpeedingConnect(Conference)Factory:ColliderSampleMaRIE Citation

  18. Roadmap to MaRIE August 2015 (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

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  19. Roadmap to MaRIE August 2015 (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

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  20. Roadmap to MaRIE January 2015 (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTech ConnectSpeedingConnect(Conference)Factory:ColliderSampleMaRIE

  1. Roadmap to MaRIE March 2015 (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

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  2. Roadmap to MaRIE March 2015 (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTech ConnectSpeedingConnect(Conference)Factory:ColliderSampleMaRIERoadmap toMarch 2015

  3. Roadmap to MaRIE May 2015 (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

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  4. Roadmap to MaRIE May 2015 (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

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  5. Roadmap to MaRIE November 2015 (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTech ConnectSpeedingConnect(Conference)Factory:ColliderSampleMaRIERoadmap

  6. Roadmap to MaRIE November 2015 (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

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  7. MA3T Model Application at ORNL Assesses the Future of Fuel Cell Markets |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuelsof EnergyApril 2014 |Department of Energy MA3T Model Application at ORNL

  8. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  9. Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well

    E-Print Network [OSTI]

    Jalali. Bahram

    Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

  10. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high-power Traveling Wave Power Amplifier circuit (TWPA)[1][2] for realization of wideband power amplifiersWE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J

  11. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  12. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a

    E-Print Network [OSTI]

    Haller, Gary L.

    . INTRODUCTION Triple-junction metamorphic solar cells have reached ef- ficiencies as high as 41.1% by combiningMetamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a S. Tomasulo,1 P-yP solar cells. Tensile-strained GaAsxP1-x buffers grown on GaAs using unoptimized conditions

  13. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

    E-Print Network [OSTI]

    Atwater, Harry

    FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS RobynAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising

  14. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore »the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  15. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  16. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  17. Metal contacts on ZnSe and GaN

    SciTech Connect (OSTI)

    Duxstad, K J [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  18. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

    SciTech Connect (OSTI)

    Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-10-07

    The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

  19. Elemental characterization of LL-MA radioactive waste packages with the associated particle technique

    SciTech Connect (OSTI)

    Perot, B.; Carasco, C.; Toure, M.; El Kanawati, W.; Eleon, C.

    2011-07-01

    The French Alternative Energies and Atomic Energy Commission (CEA) and National Radioactive Waste Management Agency (ANDRA) are conducting an R and D program to improve the characterization of long-lived and medium activity (LL-MA) radioactive waste packages with analytical methods and with non-destructive nuclear measurements. This paper concerns fast neutron interrogation with the associated particle technique (APT), which brings 3D information about the waste material composition. The characterization of volume elements filled with iron, water, aluminium, and PVC in bituminized and fibre concrete LL-MA waste packages has been investigated with MCNP [1] and MODAR data analysis software [2]. APT provides usable information about major elements presents in the volumes of interest. However, neutron scattering on hydrogen nuclei spreads the tagged neutron beam out of the targeted volume towards surrounding materials, reducing spatial selectivity. Simulation shows that small less than 1 L targets can be characterised up to the half-radius of a 225 L bituminized drum, the matrix of which is very rich in hydrogen. Deeper characterization in concrete is possible but limited by counting statistics due to photon attenuation in this dense matrix and, unless large inspection volumes are considered, by the lack of spatial selectivity of the tagged neutron beam due to neutron scattering. (authors)

  20. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen; Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  1. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

    2010-01-15

    The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

  2. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  3. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  4. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  5. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  6. A hole modulator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Zabu Kyaw, Wei Liu, Yun Ji, Liancheng Wang, Swee Tiam Tan, Xiao Wei Sun, and Hilmi Volkan

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    well on optical power of light-emitting diodes Appl. Phys. Lett. 96, 051113 (2010); 10-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which

  7. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  8. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  9. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  10. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  11. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  12. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE, Westborough, MA (United States); Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

    2015-04-01

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  13. Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

    SciTech Connect (OSTI)

    Deshpande, Saniya; Frost, Thomas; Hazari, Arnab; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109 (United States)

    2014-10-06

    We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ?1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200?MHz.

  14. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m? · cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  15. Ion-induced swelling of ODS ferritic alloy MA957 tubing to 500 dpa

    SciTech Connect (OSTI)

    Toloczko, Mychailo B.; Garner, F. A.; Voyevodin, V.; Bryk, V. V.; Borodin, O. V.; Melnichenko, V. V.; Kalchenko, A. S.

    2014-10-01

    In order to study the potential swelling behavior of the ODS ferritic alloy MA957 at very high dpa levels, specimens were prepared from pressurized tubes that were unirradiated archives of tubes previously irradiated in FFTF to doses as high at 110 dpa. These unirradiated specimens were irradiated with 1.8 MeV Cr+ ions to doses ranging from 100 to 500 dpa and examined by transmission electron microscopy. No coinjection of helium or hydrogen was employed. It was shown that compared to several ferritic/martensitic steels irradiated in the same facility, these tubes were rather resistant to void swelling, reaching a maximum value of only 4.5% at 500 dpa and 450°C. In this fine-grained material, the distribution of swelling was strongly influenced by the presence of void denuded zones along the grain boundaries.

  16. Larger sized wire arrays on 1.5 MA Z-pinch generator

    SciTech Connect (OSTI)

    Safronova, A. S. Kantsyrev, V. L. Weller, M. E. Shlyaptseva, V. V. Shrestha, I. K. Esaulov, A. A. Stafford, A.; Chuvatin, A. S.; Coverdale, C. A.; Jones, B.

    2014-12-15

    Experiments on the UNR Zebra generator with Load Current Multiplier (LCM) allow for implosions of larger sized wire array loads than at standard current of 1 MA. Advantages of larger sized planar wire array implosions include enhanced energy coupling to plasmas, better diagnostic access to observable plasma regions, and more complex geometries of the wire loads. The experiments with larger sized wire arrays were performed on 1.5 MA Zebra with LCM (the anode-cathode gap was 1 cm, which is half the gap used in the standard mode). In particular, larger sized multi-planar wire arrays had two outer wire planes from mid-atomic-number wires to create a global magnetic field (gmf) and plasma flow between them. A modified central plane with a few Al wires at the edges was put in the middle between outer planes to influence gmf and to create Al plasma flow in the perpendicular direction (to the outer arrays plasma flow). Such modified plane has different number of empty slots: it was increased from 6 up to 10, hence increasing the gap inside the middle plane from 4.9 to 7.7 mm, respectively. Such load configuration allows for more independent study of the flows of L-shell mid-atomic-number plasma (between the outer planes) and K-shell Al plasma (which first fills the gap between the edge wires along the middle plane) and their radiation in space and time. We demonstrate that such configuration produces higher linear radiation yield and electron temperatures as well as advantages of better diagnostics access to observable plasma regions and how the load geometry (size of the gap in the middle plane) influences K-shell Al radiation. In particular, K-shell Al radiation was delayed compared to L-shell mid-atomic-number radiation when the gap in the middle plane was large enough (when the number of empty slots was increased up to ten)

  17. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    SciTech Connect (OSTI)

    Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-07-07

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  18. Theory of weak localization in ferromagnetic (Ga,Mn)As 

    E-Print Network [OSTI]

    Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

    2009-01-01

    We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

  19. Low-temperature magnetization of (Ga,Mn) As semiconductors 

    E-Print Network [OSTI]

    Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

    2006-01-01

    the semiphenomenological virtual crystal model the valence band holes experience a mean-field hMF =JpdNMn?S , and the band Hamiltonian can then be written as H? MF=H? KL?B?+hMFs?z, where H? KL?B? is the B-dependent six- band Kohn-Luttinger Hamiltonian of the GaAs host...

  20. Ohmic contacts for high-temperature GaP devices 

    E-Print Network [OSTI]

    Van der Hoeven, Willem Bernard

    1981-01-01

    in Table II, heat treatments have also been made by laser. One of the earliest papers that describe laser annealing to obtain ohmic contacts to GaP appeared in 1974 (20] . In this paper, Pounds, Saifi, and Hahm reported to have obtained ohmic contacts...

  1. High-quality InP on GaAs

    E-Print Network [OSTI]

    Quitoriano, Nathaniel Joseph

    2006-01-01

    In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

  2. Nanoscale GaAs metalsemiconductormetal photodetectors fabricated using nanoimprint lithography

    E-Print Network [OSTI]

    ­V) characteristics of the contacts are very sensi- tive to the surface states and defects. In this letter, we report mold with interdigited fin- gers was first created on a silicon substrate. Next, a layer of polymethylmethancrylate PMMA was spun on a semi- insulating SI GaAs substrate. Before imprinting, both the mold

  3. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  4. Luminescence properties of defects in GaN

    SciTech Connect (OSTI)

    Reshchikov, Michael A.; Morkoc, Hadis [Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2005-03-15

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

  5. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  6. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  7. Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

    SciTech Connect (OSTI)

    Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

    2014-10-27

    The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

  8. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  9. The Department of Mathematics at Rowan University is proud to announce the new BS/MA in Math degree track. In five (5) years, you can earn your BS and MA degrees in Mathematics!

    E-Print Network [OSTI]

    Hassen, Abdul

    of Courses 1st YEAR (Freshmen) 2nd YEAR (Sophomore) 3rd YEAR (Junior) 4th YEAR (Senior) ­ YEAR ONE OF PROGRAM degree track. In five (5) years, you can earn your BS and MA degrees in Mathematics! Recommended Sequence FALL SEMESTER (15 s.h.) SPRING SEMESTER (15 s.h.) 5th YEAR (Graduate Student) ­ YEAR TWO OF PROGRAM

  10. Schaal S (2002) Arm and hand movement control. In: Arbib MA (ed) The handbook of brain theory and neural networks, 2nd Edition. MIT Press, Cambridge, MA, pp 110-113

    E-Print Network [OSTI]

    Schaal, Stefan

    2002-01-01

    and neural networks, 2nd Edition. MIT Press, Cambridge, MA, pp 110-113 Arm and Hand Movement Control Stefan The control of arm and hand movements in human and nonhuman primates has fascinated researchers in psychology level of movement skills. Research towards an understanding of motor control can be approached

  11. Fill a Vacant MaPs or AUPE Research Manager/Supervisor Position Use this job aid to post for and hire for a vacant (or soon to be vacant) Fixed Term MaPS or AUPE

    E-Print Network [OSTI]

    Calgary, University of

    for and hire for a vacant (or soon to be vacant) Fixed Term MaPS or AUPE manager/supervisor position (funded which fields on the form open up for entry. · In this example we are hiring for a vacant Fixed Term. Enter Position Information 3. · Enter the Position Number of the vacant role you are looking to fill

  12. Fill a Vacant MaPS or AUPE Research Manager/Supervisor Position in Need of Use this job aid to change, post for and hire a vacant (or soon to be vacant) Fixed Term MaPS or AUPE

    E-Print Network [OSTI]

    Calgary, University of

    this job aid to change, post for and hire a vacant (or soon to be vacant) Fixed Term MaPS or AUPE manager are hiring a vacant Fixed Term position with changes required to the position attributes, so you will select Positioned Job ­ With Changes. Enter Position Information 3. · Enter the Position Number of the vacant role

  13. Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs

    E-Print Network [OSTI]

    Fan, Kebin

    We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ?20–160??kV/cm drives intervalley scattering. ...

  14. Device-level thermal analysis of GaN-based electronics

    E-Print Network [OSTI]

    Bagnall, Kevin Robert

    2013-01-01

    Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

  15. Light extraction in individual GaN nanowires on Si for LEDs

    E-Print Network [OSTI]

    Zhou, Xiang

    GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

  16. Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on

    E-Print Network [OSTI]

    California at Davis, University of

    Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on and Color, Canada · Lorne Whitehead, Canada #12;Inves&ga&ng the Trade-Off between Luminous

  17. Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept

    E-Print Network [OSTI]

    2006-01-01

    Characterization of NIR InGaAs imager arrays for the JDEMapplications. Keywords: NIR, InGaAs, astronomy, low-1.7um band Near Infrared (NIR) focal plane mosaic with high

  18. Atomic structure of postgrowth annealed epitaxial Fe/(001)GaAs interfaces

    E-Print Network [OSTI]

    LeBeau, James; Hu, Qi O.; Palmstrom, Christopher; Stemmer, Susanne

    2008-01-01

    line pro?le across the interface along the line indicated inHAADF images of the GaAs/Fe interface along ?a? ?11 0? GaAsindicates the location of an interface step. Arrows in ?b?

  19. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  20. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Tomás

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related species—hydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?°C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  1. High 400?°C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?°C. Even at 400?°C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  2. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    quantum wells (QW)s,1) and InAs quantum dots at 1.3 mm2) have brought about the commercialization of Ga differential quantum efficiency, T-zero and far field as a function of stripe width. # 2009 The Japan Society offer a number of advantages over their InP counterparts, namely the use of larger substrates (>3 in

  3. Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1

    E-Print Network [OSTI]

    Lu, Wei

    quantum dots by low-energy ion sputtering on a surface has been reported in several semiconductor sys quantum dots on the surface. The mechanism involves the balance between roughening and smoothing actions], Ge [10], as well as a variety of III­V compounds (GaSb [11], InP [12], and InSb [13]) can form

  4. Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Neogi, Arup, E-mail: arup@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Pereira, Sergio [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Watson, Ian M. [SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)

    2014-06-16

    The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

  5. Molecular Dynamics Simulation of GaAs Molecular Beam Epitaxy D. A. Murdick,1

    E-Print Network [OSTI]

    Wadley, Haydn

    of Virginia, Charlottesville, Virginia 22904, USA 2 Department of Materials, University of Oxford, Oxford OX1 3PH, UK ABSTRACT The vapor deposition of epitaxial GaAs and (Ga,Mn)As thin films during far-temperature growth of Ga0.94Mn0.06As and the Mn clustering trends in as-grown films. INTRODUCTION GaAs is widely used

  6. DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE

    E-Print Network [OSTI]

    Sites, James R.

    i DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT Submitted ENTITLED `ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT' BE ACCEPTED(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT The demand for alternative sources of energy is rapidly

  7. TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron

    E-Print Network [OSTI]

    neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

  8. Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a

    E-Print Network [OSTI]

    Okamoto, Koichi

    is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

  9. Near perfect solar absorption in ultra-thin-film GaAs photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    Near perfect solar absorption in ultra-thin-film GaAs photonic crystals Sergey Eyderman,*a Alexei voltage of GaAs solar cells. The current world record for high efficiency solar cells is held by thin ultra-thin (GaAs in low-cost solar cells. However, this reduction in the volume

  10. ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission

    E-Print Network [OSTI]

    Polman, Albert

    a non-concentrating system with limited emission angle in a thin, light trapping GaAs solar cellORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission angle Emily D Kosten1 of a high-quality GaAs solar cell is a feasible route to achieving power conversion efficiencies above 38

  11. Inversion of wurtzite GaN(0001) by exposure to V. Ramachandran and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    in the growth rate of GaN on different crystallographic planes [8], pointing to a surfactant effect of Mg on Ga in these films and the carrier concentration was therefore very low [1,2]; dopant activa- tion can be achieved of Mg at GaN growth temperatures is an issue and dopant in- corporation may be rather inefficient [5

  12. Fire patterns in central semiarid Argentina M.A. Fischer a,*, C.M. Di Bella a,b

    E-Print Network [OSTI]

    Nacional de San Luis, Universidad

    Fire patterns in central semiarid Argentina M.A. Fischer a,*, C.M. Di Bella a,b , E.G. Jobbágy b Cabañas S/N, Hurlingham (1686), Buenos Aires, Argentina b Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina c Grupo de Estudios Ambientales e IMASL, Universidad Nacional de San

  13. Invited talk A4.01, Symposium A: Compliant Energy Sources 2012 MRS Fall Meeting, Boston, MA, USA.

    E-Print Network [OSTI]

    Skorobogatiy, Maksim

    . This problem motivated many recent efforts into the development of soft electronics for truly wearable smartInvited talk A4.01, Symposium A: Compliant Energy Sources 2012 MRS Fall Meeting, Boston, MA, USA. Manuscript ID: 1445687 1 Flexible fiber batteries for applications in smart textiles Hang Qu*3 , Jean

  14. Proceedings of ANTEC `95, Boston, MA, May 7-11, 1995. MEASUREMENT OF THE FRICTION AND LUBRICITY

    E-Print Network [OSTI]

    Nairn, John A.

    Proceedings of ANTEC `95, Boston, MA, May 7-11, 1995. 1 MEASUREMENT OF THE FRICTION AND LUBRICITY role in patient comfort, it is useful to study the friction and lubricity properties of contact lenses and of the effects of lubricants, such as tear fluid, on the sliding motion. This paper describes a custom

  15. Page 1 of 2 Research Opportunity/Internship in Kenya for MA Student in Economics, Computer Science,

    E-Print Network [OSTI]

    Daraio, Chiara

    with high operational costs, adverse health effects, and low-quality lightning. Solar could provide a cost the data collected for an MA thesis. About us: Bonsai Systems is an ETH spin-off which develops sensing for development studies. Together we will use sensor technology to rigorously measure the impact of solar lights

  16. Joint Program on the Science and Policy of Global Change, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139.

    E-Print Network [OSTI]

    of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139. b MIT Energy Initiative, Massachusetts Institute: 617-253-6609, Fax: 617-253-9845. Economics of Energy & Environmental Policy, Vol. 1, No. 1. Copyright 2012 by the IAEE. All rights reserved. The Influence of Shale Gas on U.S. Energy and Environmental

  17. In Proceedings of the International Conference on Artificial Intelligence in Design, Worcester, MA, June In Proceedings of the 6th

    E-Print Network [OSTI]

    Tecuci, Gheorghe

    In Proceedings of the International Conference on Artificial Intelligence in Design, Worcester, MA, June 2000. 1 In Proceedings of the 6th International Conference on Artificial Intelligence in Design OF AN INTELLIGENT AGENT FOR THE DESIGN OF LOCAL AREA NETWORKS HADI REZAZAD*, GHEORGHE TECUCI Learning Agents

  18. An implicit finite-element model for 3D non-hydrostatic mesoscale ocean M.A. Maidana1

    E-Print Network [OSTI]

    Politècnica de Catalunya, Universitat

    An implicit finite-element model for 3D non-hydrostatic mesoscale ocean flows M.A. Maidana1 , J-dimensional, non-hydrostatic mesoscale ocean flows. The model considered here incorporates surface wind stress and the idea of using unstructured grids for modelling mesoscale ocean dynamics sounds very attractive given

  19. Monte Carlo data-driven tight frame for seismic data Shiwei Yu1, Jianwei Ma2 and Stanley Osher3

    E-Print Network [OSTI]

    Ferguson, Thomas S.

    -DDTF), and tested the trained filter bank derived from this process by conducting seismic data denoising preprocessing steps in the seismic data processing chain. Methods to attenuate random noise can generallyMonte Carlo data-driven tight frame for seismic data recovery Shiwei Yu1, Jianwei Ma2 and Stanley

  20. Rapport sur ma mission au Vietnam du 30 septembre au 7 octobre et du 28 au 29 octobre 2006

    E-Print Network [OSTI]

    Waldschmidt, Michel

    Rapport sur ma mission au Vietnam du 30 septembre au 7 octobre et du 28 au 29 octobre 2006 Michel des trois branches de la composante de l'Université Nationale du Vietnam à Ho Chi Minh Ville (la mission au Cambodge du 8 au 27 octobre. Ce texte est consacré à mes deux passages au Vietnam. Les textes