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1

Price of Everett, MA Liquefied Natural Gas Total Imports (Dollars...  

Gasoline and Diesel Fuel Update (EIA)

Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet) Price of Everett, MA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet) Decade Year-0...

2

Everett, MA Liquefied Natural Gas Imports From Yemen (Million...  

Gasoline and Diesel Fuel Update (EIA)

Liquefied Natural Gas Imports From Yemen (Million Cubic Feet) Everett, MA Liquefied Natural Gas Imports From Yemen (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct...

3

Price of Everett, MA Natural Gas LNG Imports from Australia ...  

Gasoline and Diesel Fuel Update (EIA)

Australia (Dollars per Thousand Cubic Feet) Price of Everett, MA Natural Gas LNG Imports from Australia (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4...

4

Everett, MA Natural Gas Liquefied Natural Gas Imports from Algeria...  

U.S. Energy Information Administration (EIA) Indexed Site

Algeria (Million Cubic Feet) Everett, MA Natural Gas Liquefied Natural Gas Imports from Algeria (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7...

5

Everett, MA Natural Gas Liquefied Natural Gas Imports from Egypt...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Everett, MA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7...

6

Everett, MA Liquefied Natural Gas Total Imports (Million Cubic...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Total Imports (Million Cubic Feet) Everett, MA Liquefied Natural Gas Total Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5...

7

Everett, MA Natural Gas Liquefied Natural Gas Imports from Australia...  

U.S. Energy Information Administration (EIA) Indexed Site

Australia (Million Cubic Feet) Everett, MA Natural Gas Liquefied Natural Gas Imports from Australia (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

8

Price of Everett, MA Natural Gas LNG Imports from Algeria (Dollars...  

U.S. Energy Information Administration (EIA) Indexed Site

Algeria (Dollars per Thousand Cubic Feet) Price of Everett, MA Natural Gas LNG Imports from Algeria (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4...

9

Price of Everett, MA Natural Gas LNG Imports from Egypt (Nominal...  

Annual Energy Outlook 2012 (EIA)

Egypt (Nominal Dollars per Thousand Cubic Feet) Price of Everett, MA Natural Gas LNG Imports from Egypt (Nominal Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

10

Everett, MA Natural Gas Liquefied Natural Gas Imports from Trinidad and  

Gasoline and Diesel Fuel Update (EIA)

Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Everett, MA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 10,240 11,488 7,086 8,271 8,126 8,150 7,731 7,870 5,199 5,520 9,264 4,691 2012 9,482 8,458 7,661 1,447 4,940 5,465 6,646 10,377 5,634 4,748 2,553 2,581 2013 5,126 5,003 4,629 5,171 5,626 5,173 8,023 5,961 2,995 2,674 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 1/7/2014 Next Release Date: 1/31/2014 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Everett, MA LNG Imports from Trinidad/Tobago

11

MA.+'  

Office of Legacy Management (LM)

MA.+' MA.+' t -@ . ;' OAK RIDGE NATIONAL LABORATORY i OPtRATED BY MARTIN MARIETTA ENERGY SYSTEMS, INC. FOR THE UNITE0 STATES DEPARTMENT OF ENERGY ,,y , - IhI of ORNL/TM-10053 RESULTS OF THE RADIOLOGICAL SURVEY AT THE VENTRON SITE, BEVERLY, MASSACHUSETTS W. D. Cottrell R. F. Carrier -.- _ ..-. - . . . -~~.- ~~- Printed in the United States of America. Available from National Technical Information Service U.S. Department of Commerce 5285 Port Royal Road, Springfield, Virginia 22161 NTIS price codes-Printed Copy: ~06 Microfiche A01 This report was prepared as an account of work sponsored by an agency of the United StatesGovernment. Neither the U nited StatesGovernment nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or

12

Everett, Washington: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Everett, Washington: Energy Resources Everett, Washington: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 47.9789848°, -122.2020794° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":47.9789848,"lon":-122.2020794,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

13

Everett, MA LNG Imports from Algeria - U.S. Energy Information ...  

U.S. Energy Information Administration (EIA)

-No Data Reported; --= Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Notes: See Definitions ...

14

MA.2  

Office of Legacy Management (LM)

IS .:,I. ;' IS .:,I. ;' MA.2 0 y-AU Mr. M ichael Matt W a tertown Redevelopment Authority 319 Arlington Street W a tertown, Massachusetts 02172 Dear Mr. Matt: The Department of Energy is evaluating the radiological condition of sites that were utilized under the Manhattan Engineer District and/or the Atomic Energy C o m m ission in the early years of nuclear energy development to determine whether they need remedial action and whether the Department has authority to perform such action. As you know from information previously sent to you, portions of the W a tertown Arsenal in W a tertown, Massachusetts, were identified as possible sites. The areas investigated included those areas which were the sites of Buildings 34, 41, and 421 and the GSA site. The enclosed documents, which represent the Department's review of the

15

DOE - Office of Legacy Management -- Beverly MA Site - MA 04  

Office of Legacy Management (LM)

Beverly MA Site - MA 04 Beverly MA Site - MA 04 FUSRAP Considered Sites Beverly, MA Alternate Name(s): Metal Hydrides, Inc. Ventron Corporation MA.04-1 Location: Congress Street, Beverly, Massachusetts MA.04-4 Historical Operations: Provided uranium metal production under contract with MED. Thorium and radium contamination occurred from non-MED operations. MA.04-6 Eligibility Determination: Eligible MA.04-1 Radiological Survey(s): Assessment Survey, Verification Survey MA.04-4 MA.04-7 Site Status: Certified- Certification Basis, Federal Register Notice included MA.04-5 MA.04-6 MA.04-7 Long-term Care Requirements: Long-Term Surveillance and Maintenance Requirements for Remediated FUSRAP Sites S07566_FUSRAP Also see Beverly, MA, Site Documents Related to Beverly, MA Beverly Site Aerial Photograph

16

L. Lynn Ma | BNL  

NLE Websites -- All DOE Office Websites (Extended Search)

L. Lynn Ma Advanced Applications Engineer Education Xiamen University, B.S., Applied Mathematics Florida Institute of Technology, M.S., Physical Oceanography State University of...

17

Energy Information Administration/Natural Gas Annual 2009 25  

Gasoline and Diesel Fuel Update (EIA)

700 800 2005 2006 2007 2008 2009 0 2 4 6 8 10 12 14 16 18 20 22 Everett, MA Elba Island, GA Cove Point, MD Other * "Other" includes the following points of entry: Lake Charles,...

18

Microsoft Word - Figure_11.doc  

Gasoline and Diesel Fuel Update (EIA)

2006 2007 2008 0 2 4 6 8 10 12 14 16 18 20 22 Everett, MA Cove Point, MD Elba Island, GA Lake Charles, LA * Gulf Gateway, LA, LNG volumes were (in million cubic feet): 5,198...

19

DE-MA0002512  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Award No. 2. Modification No. 3. Effective Date Award No. 2. Modification No. 3. Effective Date 4. CFDA No. DE-MA0002512 03/27/2012 ASSISTANCE AGREEMENT 7. Period of Performance 6. Sponsoring Office 5. Awarded To Other Cooperative Agreement Grant test 10. Purchase Request or Funding Document No. 9. Authority 8. Type of Agreement 11. Remittance Address 12. Total Amount 13. Funds Obligated Govt. Share: $0.00 Cost Share : $0.00 Total : $0.00 This action: $0.00 Total : $0.00 test 14. Principal Investigator 15. Program Manager 16. Administrator test 19. Submit Reports To 18. Paying Office 17. Submit Payment Requests To 20. Accounting and Appropriation Data See Schedule 21. Research Title and/or Description of Project For the Recipient For the United States of America 22. Signature of Person Authorized to Sign

20

WIND DATA REPORT FALMOUTH, MA  

E-Print Network (OSTI)

WIND DATA REPORT FALMOUTH, MA June1, 2004 to August 31, 2004. Prepared for Massachusetts Technology...................................................................................................................... 8 Wind Speed Time Series............................................................................................................. 8 Wind Speed Distributions

Massachusetts at Amherst, University of

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Discovery and utilization of sorghum genes (Ma5/Ma6)  

DOE Patents (OSTI)

Methods and composition for the production of non-flowering or late flowering sorghum hybrid. For example, in certain aspects methods for use of molecular markers that constitute the Ma5/Ma6 pathway to modulate photoperiod sensitivity are described. The invention allows the production of plants having improved productivity and biomass generation.

Mullet, John E; Rooney, William L; Klein, Patricia E; Morishige, Daryl; Murphy, Rebecca; Brady, Jeff A

2012-11-13T23:59:59.000Z

22

The ma Ni Song 1  

E-Print Network (OSTI)

ba sgrol ma Date of recording November 10th 2009. Place of recording Ci jo Village, Phu ma Township, Sde dge County, Dkar mdzes Tibetan Autonomous Prefecture, Sichuan Province, China. Name(s), age, sex, place of birth of performer(s) Bo...

Zla ba sgrol ma

2009-11-10T23:59:59.000Z

23

NREL: Energy Sciences - Jie Ma  

NLE Websites -- All DOE Office Websites (Extended Search)

Jie Ma Jie Ma Postdoctoral Researcher Photo of Jie Ma Phone: (303) 384-6511 Email: jie.ma@nrel.gov At NREL Since: 2010 Dr. Ma graduated from the University of Science and Technology of China in 2004 and received a Ph.D. degree from Institute of Physics, Chinese Academy of Sciences in 2009. Jie joined the Computational Materials Science Team at NREL as a postdoctoral researcher in March, 2010. He is currently working on computational design and characterization of nanoscale materials for doping, water splitting, and solar cells, using quantum mechanical electronic structure calculation and molecular dynamics simulation techniques. Research Interests Low-dimensional systems (quantum dots, nanotube and nanowires, and surfaces) Doping in semiconductors. Solar cell and water splitting.

24

MA Mortenson | Open Energy Information  

Open Energy Info (EERE)

Mortenson Mortenson Jump to: navigation, search Name MA Mortenson Place Minnesota Zip 55440-0710 Sector Solar, Wind energy Product Construction and building firm active in the installation of wind and solar farms. References MA Mortenson[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. MA Mortenson is a company located in Minnesota . References ↑ "MA Mortenson" Retrieved from "http://en.openei.org/w/index.php?title=MA_Mortenson&oldid=348551" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties 429 Throttled (bot load) Error 429 Throttled (bot load)

25

Ga Air Compressor, Ga Air Compressor Products, Ga Air ...  

U.S. Energy Information Administration (EIA)

Ga Air Compressor, You Can Buy Various High Quality Ga Air Compressor Products from Global Ga Air Compressor Suppliers and Ga Air Compressor ...

26

MA - Office of Management - Energy Conservation Plan  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MA Energy Conservation Plan MA Energy Conservation Plan January 2010 1 Office of Management Office-Level Energy Conservation Plan January 2010 I. BACKGROUND This energy conservation plan represents an effort to reduce energy consumption within Office of Management (MA) office spaces and to increase employee awareness of and participation in energy conservation measures. II. SCOPE The plan and procedures in this document apply to all Office of Management (MA) office suites in the Forrestal and Germantown Facilities as well as the 950 L'Enfant Plaza Building. The actions and procedures set forth in this plan apply to each separate MA office suite as follows: MA-1: 4A-107 MA-43: 1F-039 MA-70: 7E-074 MA-1.1: 7E-028 MA-43: 1F-037 MA-70: 7E-054 MA-30: GH-081 MA-43:

27

Category:Boston, MA | Open Energy Information  

Open Energy Info (EERE)

Boston, MA Boston, MA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Boston, MA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Boston MA Massachusetts Electric Co.png SVFullServiceRestauran... 67 KB SVHospital Boston MA Massachusetts Electric Co.png SVHospital Boston MA M... 65 KB SVLargeHotel Boston MA Massachusetts Electric Co.png SVLargeHotel Boston MA... 65 KB SVLargeOffice Boston MA Massachusetts Electric Co.png SVLargeOffice Boston M... 65 KB SVMediumOffice Boston MA Massachusetts Electric Co.png SVMediumOffice Boston ... 65 KB SVMidriseApartment Boston MA Massachusetts Electric Co.png SVMidriseApartment Bos... 65 KB SVOutPatient Boston MA Massachusetts Electric Co.png SVOutPatient Boston MA...

28

M.A. Silva Dias,  

NLE Websites -- All DOE Office Websites (Extended Search)

1 a 260. 1 Modelando o Impacto Climtico Regional e Remoto do Desmatamento M.A. Silva Dias, 1 R. Avissar, 2 e P. Silva Dias 1,3 As observaes e os modelos concordam que os...

29

DOE - Office of Legacy Management -- Indian Orchard MA Site - MA 08  

NLE Websites -- All DOE Office Websites (Extended Search)

Indian Orchard MA Site - MA 08 Indian Orchard MA Site - MA 08 FUSRAP Considered Sites Indian Orchard, MA Alternate Name(s): Chapman Valve Manufacturing Company Chapman Valve Site Crane Company MA.08-3 MA.08-4 Location: 203 Hampshire Street, Indian Orchard, Massachusetts MA.08-2 Historical Operations: Machined extruded natural uranium rods and supplied valves and other products to MED and AEC. Also machined natural uranium rods into slugs for Brookhaven National Laboratory. MA.08-6 MA.08-7 MA.08-8 MA.08-14 Eligibility Determination: Eligible MA.08-2 Radiological Survey(s): Assessment Survey, Verification Survey MA.08-11 MA.08-12 Site Status: Certified - Certification Basis, Federal Register Notice included. MA.08-13 MA.08-14 Long-term Care Requirements: Long-Term Surveillance and Maintenance Requirements for Remediated FUSRAP Sites S07566_FUSRAP

30

US NE MA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

NE MA NE MA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 $3,000 US NE MA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 2,000 4,000 6,000 8,000 10,000 12,000 US NE MA Site Consumption kilowatthours $0 $250 $500 $750 $1,000 $1,250 $1,500 US NE MA Expenditures dollars ELECTRICITY ONLY average per household * Massachusetts households use 109 million Btu of energy per home, 22% more than the U.S. average. * The higher than average site consumption results in households spending 22% more for energy than the U.S. average. * Less reliance on electricity for heating, as well as cool summers, keeps average site electricity consumption in the state low relative to other parts of the U.S. However, spending on electricity is closer to the national average due to higher

31

US NE MA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

NE MA NE MA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 $3,000 US NE MA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 2,000 4,000 6,000 8,000 10,000 12,000 US NE MA Site Consumption kilowatthours $0 $250 $500 $750 $1,000 $1,250 $1,500 US NE MA Expenditures dollars ELECTRICITY ONLY average per household * Massachusetts households use 109 million Btu of energy per home, 22% more than the U.S. average. * The higher than average site consumption results in households spending 22% more for energy than the U.S. average. * Less reliance on electricity for heating, as well as cool summers, keeps average site electricity consumption in the state low relative to other parts of the U.S. However, spending on electricity is closer to the national average due to higher

32

WIND DATA REPORT Chester, MA  

E-Print Network (OSTI)

- Map of Chester wind tower site April 11, 2007 Renewable Energy Research Laboratory Page 5 UniversityWIND DATA REPORT Chester, MA December 2006 ­ February 2007 Prepared for Massachusetts Technology April 11, 2007 Report template version 3.1 Renewable Energy Research Laboratory University

Massachusetts at Amherst, University of

33

WIND DATA REPORT Wellfleet, MA  

E-Print Network (OSTI)

from a given direction and the average wind speed in that May 2, 2007 Renewable Energy Research Wind Speed, December 1, 2006 ­ February 28, 2007 May 2, 2007 Renewable Energy Research Laboratory PageWIND DATA REPORT Wellfleet, MA December 1st , 2006 ­ February 28th , 2007 Prepared

Massachusetts at Amherst, University of

34

MA  

U.S. Energy Information Administration (EIA)

Status: The State has unbundling programs for its residential gas customers, but participation is quite limited. Overview: Massachusetts used a ...

35

MA Org Chart, August 01, 2013  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MA-1 MA-1 Ingrid Kolb, Director Chief Acquisition Officer (Vacant) Laurie Morman, Chief of Staff Office of Resource Management and Planning MA-1.1 Marilyn Dillon, Director Willie Mae Ingram, Dep. Director (Acting) Office of Acquisition & Project Management Paul Bosco, Director David Boyd, Dep. Director Jay Glascock, Senior Advisor Office of Policy MA-63 Berta Schreiber Director Office of Contract Management Patrick Ferraro Director Office of Project Management Michael Peek Director Office of Headquarters Procurement Services Mark Brady Director Office of Property Management Carmelo Melendez Director MA-60 Office of Scheduling and Advance Anthony Rediger, Director James Covey, Dep. Director MA-10 MA-30 MA-40 MA-70 MA-90 Office of Aviation

36

InThrMa | Open Energy Information  

Open Energy Info (EERE)

InThrMa InThrMa Jump to: navigation, search Tool Summary LAUNCH TOOL Name: InThrMa Agency/Company /Organization: InThrMa Sector: Energy Focus Area: - HVAC Resource Type: Software/modeling tools User Interface: Website, Mobile Device Website: www.inthrma.com/ Web Application Link: www.inthrma.com/ Cost: Paid Language: English InThrMa Screenshot References: InThrMa[1] Logo: InThrMa Web based HVAC EMS for Internet connected thermostats, focusing on energy efficiency, including Auto Demand Response capabilities. Harnessing Data & Technology To Derive HVAC Efficiency Overview InThrMa's HVAC Energy Management Suite (EMS) allows users to manage and optimize their HVAC systems from any web browser or mobile phone. The InThrMa EMS provides various tools for programming, monitoring and

37

MA-60 Org chart | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MA-60 Org chart MA-60 Org chart Updated May 6,2013 APM Org Chart v12.pptx More Documents & Publications Office of Acquisition and Project Management (APM) Organization Chart Office...

38

Data Update for Blandford, MA November 2006  

E-Print Network (OSTI)

Data Update for Blandford, MA November 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Matthew Lackner Monthly Data Summary for November 2006 This update summarizes the monthly data results for the Blandford monitoring site in Blandford, MA, at 42.223° N, 72

Massachusetts at Amherst, University of

39

Data Update for Paxton, MA September, 2004  

E-Print Network (OSTI)

Data Update for Paxton, MA September, 2004 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for September, 2004 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

40

Data Update for Paxton, MA December, 2004  

E-Print Network (OSTI)

Data Update for Paxton, MA December, 2004 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for December, 2004 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Data Update for Paxton, MA October, 2004  

E-Print Network (OSTI)

Data Update for Paxton, MA October, 2004 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for October, 2004 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

42

Data Update for Paxton, MA Prepared for  

E-Print Network (OSTI)

Data Update for Paxton, MA July, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for July, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

43

Data Update for Paxton, MA November, 2005  

E-Print Network (OSTI)

Data Update for Paxton, MA November, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for November, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

44

Data Update for Paxton, MA November, 2004  

E-Print Network (OSTI)

Data Update for Paxton, MA November, 2004 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for November, 2004 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

45

Data Update for Paxton, MA January, 2005  

E-Print Network (OSTI)

Data Update for Paxton, MA January, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for January, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

46

Data Update for Paxton, MA August, 2005  

E-Print Network (OSTI)

Data Update for Paxton, MA August, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for August, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

47

Data Update for Paxton, MA February, 2005  

E-Print Network (OSTI)

Data Update for Paxton, MA February, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for February, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

48

Data Update for Paxton, MA September, 2006  

E-Print Network (OSTI)

Data Update for Paxton, MA September, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for September, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

49

Data Update for Paxton, MA Prepared for  

E-Print Network (OSTI)

Data Update for Paxton, MA June, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for June, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

50

Data Update for Blandford, MA October 2006  

E-Print Network (OSTI)

Data Update for Blandford, MA October 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Matthew Lackner Monthly Data Summary for October 2006 This update summarizes the monthly data results for the Blandford monitoring site in Blandford, MA, at 42.223° N, 72

Massachusetts at Amherst, University of

51

Data Update for Paxton, MA Prepared for  

E-Print Network (OSTI)

Data Update for Paxton, MA May, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for May, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

52

Data Update for Paxton, MA Prepared for  

E-Print Network (OSTI)

Data Update for Paxton, MA May, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for May, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

53

Data Update for Paxton, MA December, 2005  

E-Print Network (OSTI)

Data Update for Paxton, MA December, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for December, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

54

Data Update for Paxton, MA August, 2006  

E-Print Network (OSTI)

Data Update for Paxton, MA August, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for August, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

55

Data Update for Paxton, MA October, 2006  

E-Print Network (OSTI)

Data Update for Paxton, MA October, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for October, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

56

Data Update for Paxton, MA September, 2005  

E-Print Network (OSTI)

Data Update for Paxton, MA September, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for September, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

57

Data Update for Paxton, MA October, 2005  

E-Print Network (OSTI)

Data Update for Paxton, MA October, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for October, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

58

Data Update for Paxton, MA February, 2006  

E-Print Network (OSTI)

Data Update for Paxton, MA February, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for February, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

59

Data Update for Paxton, MA Prepared for  

E-Print Network (OSTI)

Data Update for Paxton, MA June, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for June, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

60

Data Update for Paxton, MA Prepared for  

E-Print Network (OSTI)

Data Update for Paxton, MA July, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for July, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Data Update for Paxton, MA December, 2006  

E-Print Network (OSTI)

Data Update for Paxton, MA December, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for December, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

62

Data Update for Paxton, MA March, 2005  

E-Print Network (OSTI)

Data Update for Paxton, MA March, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for March, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

63

Data Update for Paxton, MA January, 2006  

E-Print Network (OSTI)

Data Update for Paxton, MA January, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for January, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

64

Data Update for Paxton, MA April, 2005  

E-Print Network (OSTI)

Data Update for Paxton, MA April, 2005 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for April, 2005 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

65

Data Update for Paxton, MA March, 2006  

E-Print Network (OSTI)

Data Update for Paxton, MA March, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for March, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

66

Data Update for Paxton, MA November, 2006  

E-Print Network (OSTI)

Data Update for Paxton, MA November, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for November, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per

Massachusetts at Amherst, University of

67

Data Update for Paxton, MA April, 2006  

E-Print Network (OSTI)

Data Update for Paxton, MA April, 2006 Prepared for Massachusetts Technology Collaborative, 75 North Drive, Westborough, MA 01581 By Kai Wu Monthly Data Summary for April, 2006 This update summarizes the monthly data results for the Paxton MA monitoring site at 42-18-11.6 N, 71-53-50.9 W per the WSG84

Massachusetts at Amherst, University of

68

Ma'aden Open Mould Casting Machines  

Science Conference Proceedings (OSTI)

The paper will describe Ma'aden experience in ingot casting machines: commissioning and start-up, the challenges faced specially with De-molding machines,...

69

M.A. Silva Dias,  

NLE Websites -- All DOE Office Websites (Extended Search)

1 a 260. 1 a 260. 1 Modelando o Impacto Climático Regional e Remoto do Desmatamento M.A. Silva Dias, 1 R. Avissar, 2 e P. Silva Dias 1,3 As observações e os modelos concordam que os níveis atuais e os padrões de desmatamento da Amazônia de fato intensificam as transferências de massa e energia entre a terra e a atmosfera por meio da criação de circulações impulsionadas termicamente com efeitos significativos sobre a precipitação, mas que variam sazonal e regionalmente. Isso também indicou a necessidade de identificar o limiar onde o aumento do desmatamento realmente implica a diminuição de pluviosidade, conforme apontado pela maioria dos modelos de circulação geral de baixa resolução. Grande parte dos estudos sobre o impacto remoto ainda é exploratória, mas indicam que

70

DOE - Office of Legacy Management -- Shpack Landfill - MA 06  

Office of Legacy Management (LM)

Shpack Landfill - MA 06 Shpack Landfill - MA 06 FUSRAP Considered Sites Shpack Landfill, NY Alternate Name(s): Attleboro, MA Metals and Controls Site Norton Landfill area MA.06-2 MA.06-3 Location: 68 Union Road, Norton, Massachusetts MA.06-2 Historical Operations: No AEC activities were conducted on site. Contamination was suspected from disposal of materials containing uranium and zirconium ash. MA.06-2 MA.06-3 Eligibility Determination: Eligible MA.06-1 Radiological Survey(s): Assessment Surveys MA.06-4 MA.06-5 MA.06-6 Site Status: Cleanup in progress by U.S. Army Corps of Engineers. MA.06-7 MA.06-8 USACE Website Long-term Care Requirements: To be determined upon completion. Also see Documents Related to Shpack Landfill, NY MA.06-1 - DOE Memorandum; Meyers to Hart; Subject: Shpack Landfill,

71

WIND DATA REPORT WBZ Tower, Hull, MA  

E-Print Network (OSTI)

WIND DATA REPORT WBZ Tower, Hull, MA 9/1/06-11/30/06 Prepared for Department of Energy (DOE) Golden the closest tower leg The data from the SecondWind Nomad2 logger is emailed to the Renewable Energy Research Energy Research Laboratory Page 10 University of Massachusetts, Amherst Amherst, MA 01003 #12;Wind Speed

Massachusetts at Amherst, University of

72

DOE - Office of Legacy Management -- Watertown Arsenal - MA 02  

Office of Legacy Management (LM)

Watertown Arsenal - MA 02 Watertown Arsenal - MA 02 FUSRAP Considered Sites Site: WATERTOWN ARSENAL (MA.02 ) Eliminated from consideration under FUSRAP - Referred to EPA, State of Massachusetts, and the NRC Designated Name: Not Designated Alternate Name: None Location: Building Site 421 , Watertown , Massachusetts MA.02-1 Evaluation Year: 1985 MA.02-2 MA.02-3 Site Operations: Building 421 was used in the late 1940's and early 1950's by M.I.T. under Contract #AT (30-1)-956 for work on African Ores, and a modified ion-exchange technique was developed. Activities at Buildings 34, 41 and the GSA Site were conducted under AEC licensed. MA.02-4 MA.02-5 MA.02-6 Site Disposition: Eliminated - No Authority MA.02-6 MA.02-7 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium MA.02-4

73

DOE - Office of Legacy Management -- Englehard Industries - MA...  

Office of Legacy Management (LM)

operations - uranium metal - under AEC license. MA.0-03-1 Site Disposition: Eliminated - NRC licensed MA.0-03-1 Radioactive Materials Handled: Yes Primary Radioactive Materials...

74

DOE - Office of Legacy Management -- Tracerlab Inc - MA 11  

Office of Legacy Management (LM)

Tracerlab Inc - MA 11 Tracerlab Inc - MA 11 FUSRAP Considered Sites Site: TRACERLAB, INC. (MA.11 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 130 High Street , Boston , Massachusetts MA.11-1 Evaluation Year: 1987 MA.11-3 Site Operations: Research and development regarding uranium irradiation and cesium blocks during the early 1950s. MA.11-1 MA.11-3 Site Disposition: Eliminated - NRC licensed MA.11-2 MA.11-3 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium, Cesium MA.11-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP Also see Documents Related to TRACERLAB, INC. MA.11-1 - Tracerlab Letter; Epple to Mason; Subject: Steps to Secure

75

DOE - Office of Legacy Management -- National Fireworks Ordnance Corp - MA  

Office of Legacy Management (LM)

Fireworks Ordnance Corp - Fireworks Ordnance Corp - MA 13 FUSRAP Considered Sites Site: NATIONAL FIREWORKS ORDNANCE CORP (MA.13) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: American Potash and Chemical Corporation MA.13-3 Location: West Hanover , Massachusetts MA.13-1 Evaluation Year: 1991 MA.13-1 Site Operations: Performed bench scale research and development on uranium forming during the 1960s. MA.13-2 MA.13-3 Site Disposition: Eliminated - Potential for contamination considered remote based on the limited quantity of materials handled MA.13-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium Metal and Powders MA.13-3 Radiological Survey(s): None Indicated MA.13-2 Site Status: Eliminated from consideration under FUSRAP

76

DOE - Office of Legacy Management -- Fenwal Inc - MA 14  

Office of Legacy Management (LM)

Fenwal Inc - MA 14 Fenwal Inc - MA 14 FUSRAP Considered Sites Site: Fenwal, Inc. (MA.14 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Ashland , Massachusetts MA.14-1 Evaluation Year: 1994 MA.14-2 MA.14-3 Site Operations: Performed pilot scale explosion suppression tests on uranium contaminated magnesium fluoride powder in the late 1960s. MA.14-1 MA.14-3 Site Disposition: Eliminated - Potential for contamination considered remote based on the limited quantity of materials handled MA.14-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium MA.14-1 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to Fenwal, Inc.

77

U.S. Total Exports  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

78

U.S. LNG Imports from Indonesia  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

79

U.S. LNG Imports from Brunei  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

80

U.S. LNG Imports from Egypt  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

U.S. LNG Imports from Trinidad/Tobago  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

82

U.S. LNG Imports from Peru  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

83

U.S. LNG Imports from Malaysia  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

84

U.S. LNG Imports from Oman  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

85

U.S. LNG Imports from Australia  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

86

U.S. LNG Imports from Nigeria  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

87

U.S. LNG Imports from Yemen  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

88

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

89

U.S. LNG Imports from Algeria  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

90

U.S. LNG Imports from Canada  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

91

U.S. Natural Gas Imports by Pipeline from Mexico  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

92

China Ga Air Compressor, China Ga Air Compressor Products ...  

U.S. Energy Information Administration (EIA)

China Ga Air Compressor, China Ga Air Compressor Suppliers and Manufacturers Directory - Source a Large Selection of Ga Air Compressor Products at ...

93

DOE - Office of Legacy Management -- Nuclear Metals Inc - MA 09  

Office of Legacy Management (LM)

Metals Inc - MA 09 Metals Inc - MA 09 FUSRAP Considered Sites Site: NUCLEAR METALS, INC. (MA.09) Eliminated from consideration under FUSRAP - Licensed facility - included in NRC action plan (Site Decommissioning Management Plan) in 1990 for cleanup Designated Name: Not Designated Alternate Name: None Location: 1555 Massachusetts Ave. , Cambridge , Massachusetts MA.09-2 Evaluation Year: 1987 MA.09-1 Site Operations: Produced natural uranium tubes for Savannah River reactor program and fabricated power reactor fuel elements under AEC/NRC license. MA.09-4 MA.09-3 Site Disposition: Eliminated - No Authority under FUSRAP - AEC licensed operation MA.09-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium, Thorium MA.09-1 Radiological Survey(s): None Indicated

94

DOE - Office of Legacy Management -- Manufacturing Laboratories Inc - MA  

Office of Legacy Management (LM)

Manufacturing Laboratories Inc - MA Manufacturing Laboratories Inc - MA 0-04 FUSRAP Considered Sites Site: MANUFACTURING LABORATORIES, INC. (MA.0-04 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 272 Northampton Street , Boston , Massachusetts MA.0-04-1 Evaluation Year: 1987 MA.0-04-3 Site Operations: Developed a process for making projectiles from depleted uranium during the early 1950s. MA.0-04-3 Site Disposition: Eliminated - Potential for contamination considered remote based on limited scope of operations at the site MA.0-04-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium MA.0-04-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP

95

DOE - Office of Legacy Management -- Norton Co - MA 12  

Office of Legacy Management (LM)

26, 1987 MA.12-4 - AEC Letter; White to Warde; Subject: Thorium Samples; February 19, 1954 MA.12-5 - AEC Memorandum; Morgan to Epp; Subject: Shipment of Fused Uranium Oxide...

96

MaNDi: the Macromolecular Neutron Diffractometer at SNS | ORNL...  

NLE Websites -- All DOE Office Websites (Extended Search)

The Macromolecular Neutron Diffractometer at SNS MaNDi detector Detector array for the MaNDi instrument before installation. Detector cutaway Cutaway view of detector array for the...

97

Data Update for Mt. Tom, Holyoke, MA September 2005  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA September 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for September 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

98

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA March 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for March 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

99

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA June 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for June 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

100

Data Update for Mt. Tom, Holyoke, MA February 2006  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA February 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for February 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

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101

Data Update for Mt. Tom, Holyoke, MA January 2007  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA January 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for January 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

102

Data Update for Mt. Tom, Holyoke, MA October 2005  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA October 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for October 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

103

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA June 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for June 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

104

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA March 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for March 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

105

Data Update for Mt. Tom, Holyoke, MA January 2006  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA January 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for December 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

106

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA April 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for April 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

107

Data Update for Mt. Tom, Holyoke, MA January 2008  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA January 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for January 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

108

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA March 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for March 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

Massachusetts at Amherst, University of

109

Data Update for Mt. Tom, Holyoke, MA September 2007  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA September 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for September 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

110

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA July 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for July 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

Massachusetts at Amherst, University of

111

Data Update for Mt. Tom, Holyoke, MA August 2006  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA August 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for August 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

112

Data Update for Mt. Tom, Holyoke, MA November 2007  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA November 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for November 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

113

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA April 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for April 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

Massachusetts at Amherst, University of

114

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA July 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for July 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

115

Data Update for Mt. Tom, Holyoke, MA November 2005  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA November 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for November 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

116

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA April 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for April 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

117

Data Update for Mt. Tom, Holyoke, MA September 2006  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA September 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for September 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

118

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA May 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for May 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

119

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA July 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for July 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

120

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA May 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for May 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

Massachusetts at Amherst, University of

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA June 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for June 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

Massachusetts at Amherst, University of

122

Data Update for Mt. Tom, Holyoke, MA October 2007  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA October 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for October 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

123

Data Update for Mt. Tom, Holyoke, MA February 2008  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA February 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for February 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

124

Data Update for Mt. Tom, Holyoke, MA August 2007  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA August 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for August 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

125

Data Update for Mt. Tom, Holyoke, MA November 2006  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA November 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for November 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

126

Data Update for Mt. Tom, Holyoke, MA October 2006  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA October 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Elkinton Monthly Data Summary for October 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

127

Data Update for Mt. Tom, Holyoke, MA February 2007  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA February 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for February 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

128

Data Update for Mt. Tom, Holyoke, MA December 2005  

E-Print Network (OSTI)

Data Update for Mt. Tom, Holyoke, MA December 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for December 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

129

El Ma Electronic Machining srl | Open Energy Information  

Open Energy Info (EERE)

Ma Electronic Machining srl Ma Electronic Machining srl Jump to: navigation, search Name El.Ma. Electronic Machining srl Place Riva del Garda (TN), Italy Zip 38066 Sector Hydro, Hydrogen, Solar, Wind energy Product String representation "Italy-based, in ... solar sectors." is too long. References El.Ma. Electronic Machining srl[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. El.Ma. Electronic Machining srl is a company located in Riva del Garda (TN), Italy . References ↑ "El.Ma. Electronic Machining srl" Retrieved from "http://en.openei.org/w/index.php?title=El_Ma_Electronic_Machining_srl&oldid=344591" Categories: Clean Energy Organizations Companies Organizations

130

KwanliuMa_NERSC2011.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

Analysis and Visualization Analysis and Visualization Computing Requirements A Case Study Kwan-Liu Ma University of California, Davis SciDAC Institute for Ultrascale Visualization Outline * SciDAC Institute for Ultrascale Visualization * Visualization Solutions for Turbulent Combustion Simulations * A Case Study on Particle Trajectories Data Visualization Turbulent Combustion Simulations  Jackie Chen, Sandia National Laboratory  Direct numerical simulation tools are being developed Turbulent Combustion Simulations * High fidelity modeling is required to reliably predict efficiency and pollutant emission for new engines and new fuels * The current simulation code running on a supercomputer like the Cray XT5 uses up to 48,000 cores and over 14 million CPU hours per run

131

RECIPIENT:Hull Municipal Light Plant STATE: MA PROJECT TITLE...  

NLE Websites -- All DOE Office Websites (Extended Search)

Page 1 01 :L RECIPIENT:Hull Municipal Light Plant STATE: MA PROJECT TITLE: Hull Offshore Wind Research and Development Funding Opportunity Announcement Number Procurement...

132

Tensile Properties of Fine Grain MA956 Oxide Dispersion ...  

Science Conference Proceedings (OSTI)

Presentation Title, Tensile Properties of Fine Grain MA956 Oxide Dispersion ... Weld Overlay Claddings by Gas-metal-arc Welding Process for Extending Plant...

133

Radiation Protection Instrument Manual, Revision 1, PNL-MA-562  

Science Conference Proceedings (OSTI)

PNL-MA-562 This manual provides specific information for operating and using portable radiological monitoring instruments available for use on the Hanford Site.

Johnson, Michelle Lynn

2009-09-23T23:59:59.000Z

134

A MaRIE Perspective - Programmaster.org  

Science Conference Proceedings (OSTI)

MaRIE will be an international user facility and will enable unprecedented in-situ, transient measurements of real mesoscale materials in relevant extremes,...

135

Ba-Ga (Barium - Gallium)  

Science Conference Proceedings (OSTI)

Ba-Ga crystallographic data...Ba-Ga crystallographic data Phase Composition, wt% Ga Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 10 Ga 4.8 cF 176 Fd m Ba 8 Ga 7 30.8 cP 60 P 2 1 3 BaGa 2 50.4 hP 3 P 6/ mmm BaGa 4 67 tI 10 I 4/ mmm (Ga) 100 hP 2 P 6 3 / mmc...

136

PNNL-MA-530 PNNL-SA-79982  

E-Print Network (OSTI)

PNNL-MA-530 PNNL-SA-79982 Prepared for the U.S. Department of Energy under Contract DE-AC05-76RL01830 Pacific Northwest National Laboratory Flight Operations Manual August 2011 #12;#12;PNNL-MA-530 PNNL-SA-79982 Pacific Northwest National Laboratory Flight Manual August 2011 Prepared for the U

137

Johnston LFG (MA RPS Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

LFG (MA RPS Biomass Facility LFG (MA RPS Biomass Facility Jump to: navigation, search Name Johnston LFG (MA RPS Biomass Facility Facility Johnston LFG (MA RPS Sector Biomass Facility Type Landfill Gas Location Rhode Island Coordinates 41.5800945°, -71.4774291° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.5800945,"lon":-71.4774291,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

138

Ga-Zr (Gallium - Zirconium)  

Science Conference Proceedings (OSTI)

Ga-Zr crystallographic data...Ga 5 Zr 3 44.0 oC 32 Cmcm Ga 3 Zr 2 47 oF 40 Fdd 2 βGaZr 56.7 ? ? αGaZr 56.7 tI 16 I 4 1 / amd Ga 4 Zr 5 62.1 hP 18 P 6 3 / mcm Ga 2 Zr 3 66 tP 10 P 4/ mbm Ga 3 Zr 5 68.6 hP 16 P 6 3 / mcm GaZr 2 72.4 tI 12 I 4/ mcm (βZr) ~94 to 100 cI 2 Im m (αZr) 99.4 to 100 hP 2 P 6 3 / mmc...

139

Matter-Radiation Interactions in Extremes (MaRIE), Los Alamos...  

NLE Websites -- All DOE Office Websites (Extended Search)

MaRIE: Matter-Radiation Interactions in Extremes Experimental Facility MaRIE Home MaRIE 1.0 Fission, Fusion materials Facility Accelerator Systems Making, Measuring and Modeling...

140

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY...

142

SE-MA-NO Electric Coop | Open Energy Information  

Open Energy Info (EERE)

MA-NO Electric Coop MA-NO Electric Coop Jump to: navigation, search Name SE-MA-NO Electric Coop Place Missouri Utility Id 16851 Utility Location Yes Ownership C NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Municipal HPS 100 W Lighting Municipal HPS 250 W Lighting Residential Residential Residential/Commercial HPS 100 W Lighting Residential/Commercial HPS 250 W Lighting Average Rates Residential: $0.0804/kWh Commercial: $0.0763/kWh Industrial: $0.0649/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a"

143

PIA - Management and Administration (MA) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PIA - Management and Administration (MA) PIA - Management and Administration (MA) PIA - Management and Administration (MA) The E-Government Act of 2002 requires Federal agencies to perform Privacy Impact Assessments (PIAs), an analysis of how information is handled, in order: (i) to ensure handling conforms to applicable legal, regulatory, and policy requirements regarding privacy, (ii) to determine the risks and effects of collecting, maintaining and disseminating information in identifiable form in an electronic information system, and (iii) to examine and evaluate protections and alternative processes for handling information to mitigate potential privacy risks. The DOE PIA process helps to ensure privacy protections are considered and implemented throughout the system life cycle. Following are all PIAs that have been done for Management and

144

DOE - Office of Legacy Management -- Metals and Controls Corp FSM Dept - MA  

Office of Legacy Management (LM)

and Controls Corp FSM Dept - and Controls Corp FSM Dept - MA 21 FUSRAP Considered Sites Site: METALS AND CONTROLS CORP., FSM DEPT. ( MA.21 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: M&C Texas Instruments MA.21-1 Location: Attleboro , Massachusetts MA.21-1 Evaluation Year: Circa 1987 MA.21-4 Site Operations: Nuclear fuel fabrication during the 1950s and 1960s. MA.21-2 Site Disposition: Eliminated - NRC licensed MA.21-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium MA.21-3 Radiological Survey(s): Yes MA.21-3 Site Status: Eliminated from consideration under FUSRAP MA.21-2 Also see Documents Related to METALS AND CONTROLS CORP., FSM DEPT. MA.21-1 - Texas Instruments Letter; Veale to Duffy; Subject: Further

145

Everett Yowell interview: September 25, 1972  

Science Conference Proceedings (OSTI)

Yowell graduated from the University of Cincinnati in 1937, where in he majored in mathematics. In 1941, Yowell went to Columbia as a graduate assistant in astronomy. He wrote his dissertation on "Period Variations in Draconis Stars," and received his ...

H. S. Tropp

1999-08-01T23:59:59.000Z

146

Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces  

SciTech Connect

InGaN-based light emitting diodes (LEDs) with a top pattern-nanoporous p-type GaN:Mg surface were fabricated by using a photoelectrochemical (PEC) process. The peak wavelengths of electroluminescence (EL) and operating voltages were measured as 461.2 nm (3.1 V), 459.6 nm (9.2 V), and 460.1 nm (3.3 V) for conventional, nanoporous, and pattern-nanoporous LEDs using 20 mA operation current. The EL spectrum of the nanoporous LED had a larger blueshift phenomenon as a result of a partial compression strain release in the InGaN active layer through the formation of a top nanoporous surface. The light output power had 12.1% and 26.4% enhancements for the nanoporous and the pattern-nanoporous LEDs compared with conventional LEDs. The larger operating voltage of the nanoporous LED was due to the non-ohmic contact on the PEC treated p-type GaN:Mg surface. By using a pattern-nanoporous p-type GaN:Mg structure, the operating voltage of the pattern-nanoporous LED was reduced to 3.3 V. A lower compression strain in the InGaN active layer and a higher light extraction efficiency at the top nanoporous surface were observed in pattern-nanoporous LEDs for higher efficiency nitride-based LED applications.

Yang, C.C.; Lin, C.F.; Lin, C.M.; Chang, C.C.; Chen, K.T.; Chien, J.F.; Chang, C.Y. [Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

2008-11-17T23:59:59.000Z

147

MaGate Simulator: A Simulation Environment for a Decentralized Grid Scheduler  

Science Conference Proceedings (OSTI)

This paper presents a simulator for of a decentralized modular grid scheduler named MaGate. MaGate's design emphasizes scheduler interoperability by providing intelligent scheduling serving the grid community as a whole. Each MaGate scheduler instance ... Keywords: Grid Scheduling, MaGate Simulator, Simulation, SmartGRID

Ye Huang; Amos Brocco; Michele Courant; Beat Hirsbrunner; Pierre Kuonen

2009-08-01T23:59:59.000Z

148

Microsoft Word - MA HCM Workforce Plan.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

HUMAN CAPITAL HUMAN CAPITAL MANAGEMENT WORKFORCE PLAN September 2006 This page left blank intentionally. MA Workforce Plan - September 2006 TABLE OF CONTENTS Table of Contents ........................................................................................................................... i Executive Summary ...................................................................................................................... 1 1.0 Introduction.......................................................................................................................... 3 1.1 Mission and Business Vision .........................................................................................3 1.2 Human Capital Management Strategy ...........................................................................4

149

MA50177: Scientific Computing Nuclear Reactor Simulation Generalised Eigenvalue Problems  

E-Print Network (OSTI)

MA50177: Scientific Computing Case Study Nuclear Reactor Simulation ­ Generalised Eigenvalue of a malfunction or of an accident experimentally, the numerical simulation of nuclear reactors is of utmost balance in a nuclear reactor are the two-group neutron diffusion equations -div (K1 u1) + (a,1 + s) u1 = 1

Scheichl, Robert

150

MaRS: a macro-pipelined reconfigurable system  

Science Conference Proceedings (OSTI)

We introduce MaRS, a reconfigurable, parallel computing engine with special emphasis on scalability, lending itself to the computation-/data-intensive multimedia data processing and wireless communication. Global communication between the processing ... Keywords: 2D-mesh network, MIMD, computer graphics, multimedia, reconfigurable architectures, wireless communication

Nozar Tabrizi; Nader Bagherzadeh; Amir H. Kamalizad; Haitao Du

2004-04-01T23:59:59.000Z

151

Polarization-engineered GaN/InGaN/GaN tunnel diodes  

E-Print Network (OSTI)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

2010-08-24T23:59:59.000Z

152

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

153

Town of Danvers, MA Smart Grid Project | Open Energy Information  

Open Energy Info (EERE)

Smart Grid Project Smart Grid Project Jump to: navigation, search Project Lead Town of Danvers, MA Country United States Headquarters Location Danvers, Massachusetts Recovery Act Funding $8,476,800.00 Total Project Value $16,953,600.00 Coverage Area Coverage Map: Town of Danvers, MA Smart Grid Project Coordinates 42.5750946°, -70.9300507° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[]}

154

EDeMa (Smart Grid Project) | Open Energy Information  

Open Energy Info (EERE)

EDeMa EDeMa Country Germany Headquarters Location Mülheim, Germany Coordinates 51.427074°, 6.886492° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":51.427074,"lon":6.886492,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

155

Experimental Physical Sciences Vistas: MaRIE (draft)  

Science Conference Proceedings (OSTI)

To achieve breakthrough scientific discoveries in the 21st century, a convergence and integration of world-leading experimental facilities and capabilities with theory, modeling, and simulation is necessary. In this issue of Experimental Physical Sciences Vistas, I am excited to present our plans for Los Alamos National Laboratory's future flagship experimental facility, MaRIE (Matter-Radiation Interactions in Extremes). MaRIE is a facility that will provide transformational understanding of matter in extreme conditions required to reduce or resolve key weapons performance uncertainties, develop the materials needed for advanced energy systems, and transform our ability to create materials by design. Our unique role in materials science starting with the Manhattan Project has positioned us well to develop a contemporary materials strategy pushing the frontiers of controlled functionality - the design and tailoring of a material for the unique demands of a specific application. Controlled functionality requires improvement in understanding of the structure and properties of materials in order to synthesize and process materials with unique characteristics. In the nuclear weapons program today, improving data and models to increase confidence in the stockpile can take years from concept to new knowledge. Our goal with MaRIE is to accelerate this process by enhancing predictive capability - the ability to compute a priori the observables of an experiment or test and pertinent confidence intervals using verified and validated simulation tools. It is a science-based approach that includes the use of advanced experimental tools, theoretical models, and multi-physics codes, simultaneously dealing with multiple aspects of physical operation of a system that are needed to develop an increasingly mature predictive capability. This same approach is needed to accelerate improvements to other systems such as nuclear reactors. MaRIE will be valuable to many national security science challenges. Our first issue of Vistas focused on our current national user facilities (the Los Alamos Neutron Science Center [LANSCE], the National High Magnetic Field Laboratory-Pulsed Field Facility, and the Center for Integrated Nanotechnologies) and the vitality they bring to our Laboratory. These facilities are a magnet for students, postdoctoral researchers, and staff members from all over the world. This, in turn, allows us to continue to develop and maintain our strong staff across the relevant disciplines and conduct world-class discovery science. The second issue of Vistas was devoted entirely to the Laboratory's materials strategy - one of the three strategic science thrusts for the Laboratory. This strategy has helped focus our thinking for MaRIE. We believe there is a bright future in cutting-edge experimental materials research, and that a 21st-century facility with unique capability is necessary to fulfill this goal. The Laboratory has spent the last several years defining MaRIE, and this issue of Vistas presents our current vision of that facility. MaRIE will leverage LANSCE and our other user facilities, as well as our internal and external materials community for decades to come, giving Los Alamos a unique competitive advantage, advancing materials science for the Laboratory's missions and attracting and recruiting scientists of international stature. MaRIE will give the international materials research community a suite of tools capable of meeting a broad range of outstanding grand challenges.

Shlachter, Jack [Los Alamos National Laboratory

2010-09-08T23:59:59.000Z

156

DOE - Office of Legacy Management -- Tufts College - MA 0-05  

Office of Legacy Management (LM)

Tufts College - MA 0-05 Tufts College - MA 0-05 FUSRAP Considered Sites Site: TUFTS COLLEGE ( MA.0-05 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Medford , Massachusetts MA.0-05-1 Evaluation Year: 1987 MA.0-05-1 Site Operations: Research and development using only small quantities of radioactive material. MA.0-05-1 Site Disposition: Eliminated - Potential for contamination considered remote based on limited quantities of material handled MA.0-05-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium MA.0-05-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP Also see Documents Related to TUFTS COLLEGE MA.0-05-1 - Aerospace Letter; Young to Wallo; Subject: Elimination

157

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name GA-SNC Solar Place Nevada Sector Solar Product Nevada-based PV project developer and joint venture of GA-Solar North America and...

158

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

159

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

160

DOE - Office of Legacy Management -- E B Badger - MA 0-01  

Office of Legacy Management (LM)

E B Badger - MA 0-01 E B Badger - MA 0-01 FUSRAP Considered Sites Site: E.B. Badger (MA.0-01 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 75 Pitts Street , Boston , Massachusetts MA.0-01-1 Evaluation Year: 1987 MA.0-01-2 Site Operations: Construction contractor during the mid-1940s; constructed facility to refine pitchblende ore and produce feed materials at another location. MA.0-01-2 Site Disposition: Eliminated - No indication of radioactive materials handled at this site MA.0-01-2 Radioactive Materials Handled: No Primary Radioactive Materials Handled: None MA.0-01-2 Radiological Survey(s): No Site Status: Eliminated from further consideration under FUSRAP Also see Documents Related to E.B. Badger

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Model for Analysis of Energy Demand (MAED-2) | Open Energy Information  

Open Energy Info (EERE)

Website http:www-pub.iaea.orgMTCDp References MAED 21 "MAED model evaluates future energy demand based on medium- to long-term scenarios of socio-economic,...

162

MaGate: An Interoperable, Decentralized and Modular High-Level Grid Scheduler  

Science Conference Proceedings (OSTI)

This work presents the design and architecture of a decentralized grid scheduler named MaGate, which is developed within the SmartGRID project and focuses on grid scheduler interoperation. The MaGate scheduler is modular structured, and emphasizes the ... Keywords: Grid Computing, MaGate Scheduler, Meta-Scheduling, Scheduling, SmartGRID

Ye Huang; Amos Brocco; Michele Courant; Beat Hirsbrunne; Pierre Kuonen

2010-07-01T23:59:59.000Z

163

Fusion materials irradiations at MaRIE's fission fusion facility  

SciTech Connect

Los Alamos National Laboratory's proposed signature facility, MaRIE, will provide scientists and engineers with new capabilities for modeling, synthesizing, examining, and testing materials of the future that will enhance the USA's energy security and national security. In the area of fusion power, the development of new structural alloys with better tolerance to the harsh radiation environments expected in fusion reactors will lead to improved safety and lower operating costs. The Fission and Fusion Materials Facility (F{sup 3}), one of three pillars of the proposed MaRIE facility, will offer researchers unprecedented access to a neutron radiation environment so that the effects of radiation damage on materials can be measured in-situ, during irradiation. The calculated radiation damage conditions within the F{sup 3} match, in many respects, that of a fusion reactor first wall, making it well suited for testing fusion materials. Here we report in particular on two important characteristics of the radiation environment with relevancy to radiation damage: the primary knock-on atom spectrum and the impact of the pulse structure of the proton beam on temporal characteristics of the atomic displacement rate. With respect to both of these, analyses show the F{sup 3} has conditions that are consistent with those of a steady-state fusion reactor first wall.

Pitcher, Eric J [Los Alamos National Laboratory

2010-10-06T23:59:59.000Z

164

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures  

Science Conference Proceedings (OSTI)

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.

Abramkin, D. S.; Putyato, M. A.; Budennyy, S. A.; Gutakovskii, A. K.; Semyagin, B. R.; Preobrazhenskii, V. V.; Shamirzaev, T. S. [A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Pr. Lavrentyeva 13, 630090 Novosibirsk (Russian Federation); Kolomys, O. F.; Strelchuk, V. V. [V. E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, Pr. Nauki 41, 03028 Kiev (Ukraine)

2012-10-15T23:59:59.000Z

165

General Atomics (GA) Fusion News: A New Spin on Understanding...  

NLE Websites -- All DOE Office Websites (Extended Search)

General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New...

166

Rodefeld Landfill Ga Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

Rodefeld Landfill Ga Biomass Facility Jump to: navigation, search Name Rodefeld Landfill Ga Biomass Facility Facility Rodefeld Landfill Ga Sector Biomass Facility Type Landfill Gas...

167

RECIPIENT:Hull Municipal Light Plant STATE: MA PROJECT TITLE:  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

: : Page 1 01 :L RECIPIENT:Hull Municipal Light Plant STATE: MA PROJECT TITLE: Hull Offshore Wind Research and Development Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number 09EE0000326 DE-EE0000326 GFO-OO00326-001 0 Based on my review of the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the foUowing determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and demand studies), and dissemination (including, but not limited to, document mailings, publication, and distribution; and

168

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

169

U.S. LNG Imports from Other Countries  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

170

U.S. LNG Imports from Egypt  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

171

U.S. LNG Imports from Malaysia  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

172

U.S. LNG Imports from Peru  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

173

U.S. LNG Imports from Trinidad/Tobago  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

174

U.S. LNG Imports from Algeria  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

175

U.S. LNG Imports from Yemen  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

176

U.S. Total Exports  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

177

U.S. LNG Imports from Indonesia  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

178

U.S. LNG Imports from Canada  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

179

U.S. LNG Imports from Norway  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

180

U.S. LNG Imports from Equatorial Guinea  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

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181

U.S. LNG Imports from Australia  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

182

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

183

U.S. LNG Imports from Nigeria  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

184

U.S. LNG Imports from Qatar  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

185

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

186

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures  

Science Conference Proceedings (OSTI)

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Fan Dongsheng; Yu Shuiqing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Zeng Zhaoquan; Hu Xian; Dorogan, Vitaliy G.; Li Chen; Benamara, Mourad; Hawkridge, Michael E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Johnson, Shane R. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Wang, Zhiming M. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2012-10-29T23:59:59.000Z

187

A rational minor actinide (MA) recycling concept based on innovative oxide fuel with high AM content  

Science Conference Proceedings (OSTI)

A rational MA recycle concept based on high Am content fuel has been proposed. A design study of an Am- MOX fabrication plant, which is a key facility for the MA recycle concept, has been done and the facility concept was clarified from the viewpoint of basic process viability. Preliminary cost estimation suggested that the total construction cost of the MA recycle facilities including Am-MOX, Np-MOX and MA recovery could be comparable with that of the large scale LWR-MOX fabrication plant required for plutonium in LWR fuel cycle. (authors)

Tanaka, Kenya; Sato, Isamu; Ishii, Tetsuya; Yoshimochi, Hiroshi; Asaga, Takeo [Japan Atomic Energy Agency, 4002 Narita-cho, O-arai-machi, Higasiibaraki-gun, Ibaraki-ken, 311-1393 (Japan); Kurosaki, Ken [Osaka University, 2-1 Yamadaoka, Suita-shi, Osaka 565-0871 (Japan)

2007-07-01T23:59:59.000Z

188

2.8-Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus...  

Open Energy Info (EERE)

.8-Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus Mountains (Russia), Contemporaneous Granites, And Associated Ore Deposits Jump to: navigation, search GEOTHERMAL...

189

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNLs Hanford External Dosimetry Program which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. Rev. 0 marks the first revision to be released through PNNLs Electronic Records & Information Capture Architecture (ERICA) database.

Rathbone, Bruce A.

2005-02-25T23:59:59.000Z

190

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

DOE Green Energy (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

191

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells  

E-Print Network (OSTI)

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells I. Friel, C online 20 June 2005 An ultraviolet electroabsorption modulator based on AlGaN/GaN quantum wells is demonstrated. Enhanced excitonic absorption in the quantum wells at around 3.48 eV was achieved using

Moustakas, Theodore

192

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

193

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNLs Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNLs Electronic Records & Information Capture Architecture (ERICA) database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document.

Rathbone, Bruce A.

2009-08-28T23:59:59.000Z

194

MA57---a code for the solution of sparse symmetric definite and indefinite systems  

Science Conference Proceedings (OSTI)

We introduce a new code for the direct solution of sparse symmetric linear equations that solves indefinite systems with 2 2 pivoting for stability. This code, called MA57, is in HSL 2002 and supersedes the well used HSL code MA27. We describe ... Keywords: Augmented systems, direct sparse factorization, multifrontal method, numerical optimization, sparse definite and indefinite systems

Iain S. Duff

2004-06-01T23:59:59.000Z

195

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

196

Market Acceptance of Advanced Automotive Technologies Model (MA3T) Consumer  

Open Energy Info (EERE)

Market Acceptance of Advanced Automotive Technologies Model (MA3T) Consumer Market Acceptance of Advanced Automotive Technologies Model (MA3T) Consumer Choice Model Jump to: navigation, search Tool Summary Name: Market Acceptance of Advanced Automotive Technologies Model (MA3T) Consumer Choice Model Agency/Company /Organization: Oak Ridge National Laboratory OpenEI Keyword(s): EERE tool, Market Acceptance of Advanced Automotive Technologies Model (MA3T) Consumer Choice Model, MA3T Project U.S. consumer demand for plug-in hybrid electric vehicles (PHEV) in competition among various light-duty vehicle technologies for hundreds of market segments based and multiple regions. For more information, contact the ORNL Energy and Transportation Science Division at http://www.ornl.gov/sci/ees/etsd/contactus.shtml References Retrieved from

197

VIDEO SEMINAR of Ma Jun's 6/17/02 presentation: China's Water Resources:  

NLE Websites -- All DOE Office Websites (Extended Search)

VIDEO SEMINAR of Ma Jun's 6/17/02 presentation: China's Water Resources: VIDEO SEMINAR of Ma Jun's 6/17/02 presentation: China's Water Resources: Crisis and Opportunity Speaker(s): Ma Jun Date: July 3, 2002 - 12:00pm Location: 90-3122 The rivers in China, and the hundreds of millions who depend on them, are in trouble. A water crisis looms large in most parts of China. In his book, China Water Crisis, Ma Jun traces 4,000 years of the history of China's watersheds, and their mis/management. Armed with scientific data and compelling stories, Ma reveals the causes and character of the looming ecological disaster. His book has been quoted in The Economist and many western media. Limited water resources pose a major threat to social and economic development in the 21st century. Three Gorges Dam and redirecting water from south to north occupy the main focus of the efforts to increase

198

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at the U.S. Department of Energy (DOE) Hanford site. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with requirements of 10 CFR 835, the DOE Laboratory Accreditation Program, the DOE Richland Operations Office, DOE Office of River Protection, DOE Pacific Northwest Office of Science, and Hanfords DOE contractors. The dosimetry system is operated by the Pacific Northwest National Laboratory (PNNL) Hanford External Dosimetry Program which provides dosimetry services to PNNL and all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNLs Electronic Records & Information Capture Architecture database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2.

Rathbone, Bruce A.

2010-04-01T23:59:59.000Z

199

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at the U.S. Department of Energy (DOE) Hanford site. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with requirements of 10 CFR 835, the DOE Laboratory Accreditation Program, the DOE Richland Operations Office, DOE Office of River Protection, DOE Pacific Northwest Office of Science, and Hanfords DOE contractors. The dosimetry system is operated by the Pacific Northwest National Laboratory (PNNL) Hanford External Dosimetry Program which provides dosimetry services to PNNL and all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNLs Electronic Records & Information Capture Architecture database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2.

Rathbone, Bruce A.

2011-04-04T23:59:59.000Z

200

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNLs Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. Rev. 0 marks the first revision to be released through PNNLs Electronic Records & Information Capture Architecture (ERICA) database. Revision numbers that are whole numbers reflect major revisions typically involving changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Revision Log: Rev. 0 (2/25/2005) Major revision and expansion. Rev. 0.1 (3/12/2007) Minor revision. Updated Chapters 5, 6 and 9 to reflect change in default ring calibration factor used in HEDP dose calculation software. Factor changed from 1.5 to 2.0 beginning January 1, 2007. Pages on which changes were made are as follows: 5.23, 5.69, 5.78, 5.80, 5.82, 6.3, 6.5, 6.29, 9.2.

Rathbone, Bruce A.

2007-03-12T23:59:59.000Z

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201

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures  

Science Conference Proceedings (OSTI)

Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-12-24T23:59:59.000Z

202

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents (OSTI)

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

203

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

204

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNLs Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNLs Electronic Records & Information Capture Architecture (ERICA) database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2. Revision Log: Rev. 0 (2/25/2005) Major revision and expansion. Rev. 0.1 (3/12/2007) Updated Chapters 5, 6 and 9 to reflect change in default ring calibration factor used in HEDP dose calculation software. Factor changed from 1.5 to 2.0 beginning January 1, 2007. Pages on which changes were made are as follows: 5.23, 5.69, 5.78, 5.80, 5.82, 6.3, 6.5, 6.29, and 9.2. Rev 0.2 (8/28/2009) Updated Chapters 3, 5, 6, 8 and 9. Chapters 6 and 8 were significantly expanded. References in the Preface and Chapters 1, 2, 4, and 7 were updated to reflect updates to DOE documents. Approved by HPDAC on 6/2/2009. Rev 1.0 (1/1/2010) Major revision. Updated all chapters to reflect the Hanford site wide implementation on January 1, 2010 of new DOE requirements for occupational radiation protection. The new requirements are given in the June 8, 2007 amendment to 10 CFR 835 Occupational Radiation Protection (Federal Register, June 8, 2007. Title 10 Part 835. U.S., Code of Federal Regulations, Vol. 72, No. 110, 31904-31941). Revision 1.0 to the manual replaces ICRP 26 dosimetry concepts and terminology with ICRP 60 dosimetry concepts and terminology and replaces external dose conversion factors from ICRP 51 with those from ICRP 74 for use in measurement of operational quantities with dosimeters. Descriptions of dose algorithms and dosimeter response characteristics, and field performance were updated to reflect changes in the neutron quality factors used in the measurement of operational quantities.

Rathbone, Bruce A.

2010-01-01T23:59:59.000Z

205

Institutions and Cross-border Mergers and Acquisitions (M&A) Value Creation  

E-Print Network (OSTI)

Cross-border Merger and Acquisitions (M&As) are an increasingly important strategy adopted by firms in order to create value in fiercely competitive global markets. Cross-border M&A value creation, that is, wealth creation for shareholders from cross-border M&As, is therefore of considerable theoretical and practical importance. However, our understanding of the sources of cross-border M&A value creation remains limited. Researchers have found that the most commonly researched variables have little effect on cross-border M&A value creation. We therefore still do not understand the processes behind cross-border M&As. In this is dissertation I examine the main effects of host country regulatory, economic and physical infrastructure institutions on cross-border M&A value creation. I further examine the moderating effects of host country political institutions on the relationship between host country regulatory institutions and cross-border M&A value creation. Moreover, I investigate the effects of institutional distance between host and home country on cross-border M&A value creation. I argue that the effects of institutional distance (regulatory and economic distance) on cross-border M&A value creation are not symmetric, but rather the effects are contingent upon the direction of the distance. My hypotheses are tested on a sample of 6141 cross-border M&As between 1995 and 2003. Results of this analysis show that acquirers are more likely to create value by acquiring targets in countries with less advanced regulatory institutions. Further, my results indicate that host country political institutions positively moderate the relationship between host country regulatory institutions and cross-border M&A value creation. Host country economic institutions have an inverted U-shaped relationship with cross-border M&A value creation, and host country physical infrastructure institutions have a positive relationship with cross-border M&A value creation. Additionally, results show that there is an inverted U-shaped relationship between institutional distance and cross-border M&A value creation. The findings suggest that the effects of regulatory and economic institutional distance on cross-border M&A value creation are not symmetric. The effects are contingent upon the direction of the distance. That is whether the level of host country institutions is higher or lower than that of home country institutions. Implications for management and public policy are discussed.

Zhu, Hong

2008-12-01T23:59:59.000Z

206

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells  

E-Print Network (OSTI)

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells Shunfeng Li Cubic InGaN/GaN multi-quantum-wells MQWs with high structural and optical quality are achieved by utilizing freestanding 3C-SiC 001 substrates and optimizing InGaN quantum well growth. Superlattice peaks up

As, Donat Josef

207

passivation of InGaN/GaN nanopillar light emitting diodes.  

E-Print Network (OSTI)

??Recently, InGaN/GaN based blue light emitting diodes (LEDs) have become widely available commercially, but their efficiency is reduced due to the quantum confined Stark effect (more)

Choi, Won

2013-01-01T23:59:59.000Z

208

Detailed Analysis of Temperature Characteristics of InGaP/InGaAs ...  

Science Conference Proceedings (OSTI)

The current-voltage (I-V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. The structures of ...

209

AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy  

SciTech Connect

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

C.A. Wang; C.J. Vineis; D.R. Calawa

2002-02-13T23:59:59.000Z

210

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw compressors, 30-90 kW / 40-125 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

211

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors ...  

U.S. Energy Information Administration (EIA)

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors, 11-30 kW / 15-40 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

212

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw compressors, 90-160 kW / 125-200 hp.,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading ...

213

2.8-Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus Mountains  

Open Energy Info (EERE)

2.8-Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus Mountains 2.8-Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus Mountains (Russia), Contemporaneous Granites, And Associated Ore Deposits Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Journal Article: 2.8-Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus Mountains (Russia), Contemporaneous Granites, And Associated Ore Deposits Details Activities (0) Areas (0) Regions (0) Abstract: Diverse latest Pliocene volcanic and plutonic rocks in the north-central Caucasus Mountains of southern Russia are newly interpreted as components of a large caldera system that erupted a compositionally zoned rhyolite-dacite ash-flow sheet at 2.83 ± 0.02 Ma (sanidine and biotite 40Ar/39Ar). Despite its location within a cratonic collision zone, the Chegem system is structurally and petrologically similar to typical

214

Ma,BonzongoandGao/UniversityofFlorida Characterization and Leachability of Coal Combustion Residues  

E-Print Network (OSTI)

Ma,BonzongoandGao/UniversityofFlorida Characterization and Leachability of Coal Combustion Residues an important solid waste in Florida, i.e., coal combustion residues (CCR) detailed in #2-4 of the current

Ma, Lena

215

VIDEO SEMINAR of Ma Jun's 6/17/02 presentation: China's Water...  

NLE Websites -- All DOE Office Websites (Extended Search)

Speaker(s): Ma Jun Date: July 3, 2002 - 12:00pm Location: 90-3122 The rivers in China, and the hundreds of millions who depend on them, are in trouble. A water crisis looms...

216

Nanocrystals for Solar Energy MaRIE--A Facility in the Making  

E-Print Network (OSTI)

During the Manhattan Project, Los Alamos National Laboratory's mission was not only secret but very for hominid fossils in Ethiopia. FEATURES MY VIEW JOHN SARRAO, MaRIE PROJECT PROGRAM DIRECTOR 2 10 18 Tiny

217

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT  

Science Conference Proceedings (OSTI)

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology, Palur Hills (India)

2011-05-15T23:59:59.000Z

218

Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes  

SciTech Connect

We report metal-assisted electroless fabrication of nanoporous p-GaN to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs). Although it has long been believed that p-GaN cannot be etched at room temperature, in this study we find that Ag nanocrystals (NCs) on the p-GaN surface enable effective etching of p-GaN in a mixture of HF and K{sub 2}S{sub 2}O{sub 8} under ultraviolet (UV) irradiation. It is further shown that the roughened GaN/air interface enables strong scattering of photons emitted from the multiple quantum wells (MQWs). The light output power measurements indicate that the nanoporous LEDs obtained after 10 min etching show a 32.7% enhancement in light-output relative to the conventional LEDs at an injection current of 20 mA without significant increase of the operating voltage. In contrast, the samples etched for 20 min show performance degradation when compared with those etched for 10 min, this is attributed to the current crowding effect and increased surface recombination rate.

Wang Ruijun; Liu Duo; Zuo Zhiyuan; Yu Qian; Feng Zhaobin; Xu Xiangang [State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong 250100 (China)

2012-03-15T23:59:59.000Z

219

Oxide-dispersion-strengthened turbine blades, volume 1. [MA6000 alloy  

SciTech Connect

The objective of Project 4 was to develop a high-temperature, uncooled gas turbine blade using MA6000 alloy. The program objectives were achieved. Production scale up of the MA6000 alloy was achieved with a fair degree of tolerance to nonoptimum processing. The blade manufacturing process was also optimized. The mechanical, environmental, and physical property evaluations of MA6000 were conducted. The ultimate tensile strength, to about 704 C (130 F), is higher than DS MAR-M 247 but with a corresponding lower tensile elongation. Also, above 982 C (180 F) MA6000 tensile strength does not decrease as rapidly as MAR-M 247 because the ODS mechanism still remains active. Based on oxidation resistance and diffusional stability considerations, NiCrAlY coatings are recommended. CoCrAly coating should be applied on top of a thin NiCrAlY coating. Vibration tests, whirlpit tests, and a high-rotor-rig test were conducted to ensure successful completion of the engine test of the MA6000 TFE731 high pressure turbine blades. The results of these tests were acceptable. In production quantities, the cost of the Project 4 MA6000 blade is estimated to be about twice that of a cast DS MAR-M 247 blade.

Millan, P.P. Jr.; Mays, J.C.

1986-10-01T23:59:59.000Z

220

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Quantized states in homogenous polarized GaInN GaN quantum wells  

E-Print Network (OSTI)

Quantized states in homogenous polarized GaInN GaN quantum wells C. Wetzel1, S. Kamiyama1, H. Amano wells is calculated in a single particle model. The act- ing electric eld in the wells and the band gap-dimensional well layers our approach is based on induction from results obtained at the binary GaN barri- ers

Wetzel, Christian M.

222

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS  

E-Print Network (OSTI)

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS C. Wetzel, T. Takeuchi, H. Amano, and IInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across

Wetzel, Christian M.

223

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells  

E-Print Network (OSTI)

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells Marcus Eickhoff* and Dieter Suter, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding.60.-k; 78.55.Cr; 78.67.De Keywords: ODNMR; Pulsed excitation; Quantum well; GaAs 1. Introduction Nuclear

Suter, Dieter

224

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network (OSTI)

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Recanati, Catherine

225

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
226

TMS P&GA Wired to Washington  

Science Conference Proceedings (OSTI)

P & GA COMMITTEE HOME ... the connection between MSE and such key U.S. initiatives as national security, energy independence, and economic growth.

227

Price of Elba Island, GA Liquefied Natural Gas Total Imports...  

Annual Energy Outlook 2012 (EIA)

Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet)...

228

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

DOE Green Energy (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

229

U-178: VMware vMA Library Loading Error Lets Local Users Gain Elevated  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8: VMware vMA Library Loading Error Lets Local Users Gain 8: VMware vMA Library Loading Error Lets Local Users Gain Elevated Privileges U-178: VMware vMA Library Loading Error Lets Local Users Gain Elevated Privileges May 29, 2012 - 7:00am Addthis PROBLEM: A vulnerability was reported in VMware vMA PLATFORM: Version(s): vMA 4.0, 4.1, 5 patch 1 (5.0.0.1) ABSTRACT: A local user can obtain elevated privileges on the target system. Reference Links: SecurityTracker Alert ID: 1027099 CVE-2012-2752 Vendor Advisory IMPACT ASSESSMENT: High Discussion: A local user can exploit a library loading error to cause arbitrary code to be executed on the target system with elevated privileges. Impact: Privilege escalation Solution: The vendor has issued a fix (vSphere Management Assistant 5.0 Patch 2 (5.0.0.2)). Addthis Related Articles T-591: VMware vmrun Utility Lets Local Users Gain Elevated Privileges

230

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

231

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

232

Zeolitization Of Intracaldera Sediments And Rhyolitic Rocks In The 1.25 Ma  

Open Energy Info (EERE)

Zeolitization Of Intracaldera Sediments And Rhyolitic Rocks In The 1.25 Ma Zeolitization Of Intracaldera Sediments And Rhyolitic Rocks In The 1.25 Ma Lake Of Valles Caldera, New Mexico, Usa Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Journal Article: Zeolitization Of Intracaldera Sediments And Rhyolitic Rocks In The 1.25 Ma Lake Of Valles Caldera, New Mexico, USA Details Activities (0) Areas (0) Regions (0) Abstract: Quantitative X-ray diffraction analysis of about 80 rhyolite and associated lacustrine rocks has characterized previously unrecognized zeolitic alteration throughout the Valles caldera resurgent dome. The alteration assemblage consists primarily of smectite-clinoptilolite-mordenite-silica, which replaces groundmass and fills voids, especially in the tuffs and lacustrine rocks. Original rock textures are routinely preserved. Mineralization typically extends to

233

EDeMa (Smart Grid Project) (Krefeld, Germany) | Open Energy Information  

Open Energy Info (EERE)

EDeMa (Smart Grid Project) (Krefeld, Germany) EDeMa (Smart Grid Project) (Krefeld, Germany) Jump to: navigation, search Project Name EDeMa Country Germany Headquarters Location Krefeld, Germany Coordinates 50.652943°, 6.339111° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":50.652943,"lon":6.339111,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

234

U.S. DEPARTMENT OF ENERGY EERE PROJECT MA.i\IAGE\tiE~TCE~TER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MA.i\IAGE\tiE~TCE~TER MA.i\IAGE\tiE~TCE~TER NEPA DETERMINATION Page 1 of2 RECIPIENT:Brayton Energy STATE: MA PROJECT TITLE: High-Efficiency Low-Cost Solar Receiver for use in a Supercritical C02 Recompression Cycle Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA-0000595 DE-EE0005799 GF0-0005799-{)01 G05799 Based on my review of the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the foUowing determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering, analysis, and dissemination Information gathering (including, 'but not limited to, literature surveys, inventories, site vrsits, and audits}, data analysis (including, but not limited to, computer modeling}, document preparation

235

AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE  

SciTech Connect

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. [Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

2007-04-10T23:59:59.000Z

236

Accelerated aging of GaAs concentrator solar cells  

DOE Green Energy (OSTI)

An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

Gregory, P.E.

1982-04-01T23:59:59.000Z

237

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence  

E-Print Network (OSTI)

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence October 1997; accepted for publication 5 January 1998 Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed

Bowers, John

238

Optical injection and coherent control of a ballistic charge current in GaAsAlGaAs quantum wells  

E-Print Network (OSTI)

Optical injection and coherent control of a ballistic charge current in GaAs?AlGaAs quantum wells of Hache´ et al.,2,3 but in this article we report injection into the plane of GaAs/AlGaAs quantum wells specific to quantum wells. Although we expect the underlying physics of injection and control of currents

Sipe,J. E.

239

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

240

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network (OSTI)

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures  

E-Print Network (OSTI)

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high materials for green, blue, and UV light emitting diodes (LED) [1-2]. It is known that huge piezoelectric

Wetzel, Christian M.

242

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

243

J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

244

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

245

ORIGINAL PAPER M.A. Schembri D.W. Ussery C. Workman  

E-Print Network (OSTI)

ORIGINAL PAPER M.A. Schembri ? D.W. Ussery ? C. Workman H. Hasman ? P. Klemm DNA microarray-45-252506 Fax: +45-45-932809 D.W. Ussery ? C. Workman Centre for Biological Sequence Analysis, Bio 276:9924­9930 Pedersen AG, Jensen LJ, Brunak S, Staerfeldt HH, Ussery DW (2000) A DNA structural atlas

Ussery, David W.

246

Alameda County Medical Center Beth Israel Deaconess Medical Center, Boston MA  

E-Print Network (OSTI)

Alameda County Medical Center Beth Israel Deaconess Medical Center, Boston MA California Pacific Medical Center, San Francisco Cedar Sinai Medical Center Los Angeles Children's Hospital Orange Co. City of Hope National Medical Center, Duarte CA Community Regional Medical Center, Fresno Desert Regional

Tsien, Roger Y.

247

Gravity Based Autonomous Calibration for Robot Manipulators Donghai Ma, John M. Hollerbach and Yangming Xu  

E-Print Network (OSTI)

Gravity Based Autonomous Calibration for Robot Manipulators Donghai Ma, John M. Hollerbach, the gravity torque exerted on the joint varies sinusoidally with rotation angle. By means of sinusoidal curve. The gravity vec- tor, expressed in the defined base coordinates, can also be found. Thereafter we determine

Hollerbach, John M.

248

The Market Acceptance of Advanced Automotive Technologies (MA3T) Model  

E-Print Network (OSTI)

to be learned about how consumers will evaluate novel vehicle technologies, such as plug-in hybrid electric vehicles (PHEV), extended-range electric vehicle (EREV), battery electric vehicles (BEV) and fuel cell-- passenger cars and light-duty trucks. MA3 T considers the U.S. household users of light- duty vehicles (LDV

249

Ma, Kockelman & Damien 1 A Multivariate Poisson-Lognormal Regression Model for Prediction  

E-Print Network (OSTI)

Analysis and Prevention, 18(1), pp.1-12. Hauer, E. (1997). Observational Before-After Studies in Road.V., Stewart, J.R., Huang, H.H., and Lagerwey, P.A. (2002). Safety Effects of Marked Vs. Unmarked Crosswalks.S. DOT. #12;Ma, Kockelman & Damien 18 List of Tables Table 1 Summary Statistics of Variables

Kockelman, Kara M.

250

Nano-mineralogy studies by advanced electron microscopy Chi Ma and George R. Rossman  

E-Print Network (OSTI)

Nano-mineralogy studies by advanced electron microscopy Chi Ma and George R. Rossman Division and planetary materials easier and faster down to nano-scales. Small but new minerals with important geological significance are being discovered. Nano-features are being discovered in many common minerals and gems, which

Ma, Chi

251

Free carrier accumulation at cubic AlGaN/GaN heterojunctions  

Science Conference Proceedings (OSTI)

Cubic Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The experimental potential profile indicates that the unintentionally doped layers show n-type behavior and accumulation of free electrons at the interface with a density of 5.1 x 10{sup 11}/cm{sup 2}, about one order of magnitude less than in wurtzite AlGaN/GaN junctions. A combination of electron holography and cathodoluminescence measurements yields a conduction-to-valence band offset ratio of 5:1 for the cubic AlGaN/GaN interface, which also promotes the electron accumulation. Band diagram simulations show that the donor states in the AlGaN layer provide the positive charges that to a great extent balance the two-dimensional electron gas.

Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Tschumak, E.; Zado, A.; As, D. J. [Department of Physics, Universitaet Paderborn, D-33098 Paderborn (Germany)

2012-04-02T23:59:59.000Z

252

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and ...

253

Plasma Damage in p-GaN  

SciTech Connect

The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.

Cao, X.A.; Dang, G.T.; Hickman, R.A.; Pearton, S.J.; Ren, F.; Shul, R.J.; Van Hove, J.M.; Zhang, A.P.; Zhang, L.

1999-06-30T23:59:59.000Z

254

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

255

Radiation effects in 1. 06-. mu. m InGaAs LED's and Si photodiodes  

SciTech Connect

Because of the low-intrinsic and radiation-induced attenuation losses in glass fibers in the wavelength range 1.0--1.3 ..mu..m, emitters and detectors operating in this range are of practical importance for radiation-environment applications. We have studied the effects of both ..gamma.. and neutron irradiation on the properties of InGaAs LED's emitting at 1.06 ..mu..m and Si photodiode detectors optimized for this wavelength. While the preirradiation light output of the InGaAs LED's is low relative to many GaAs LED's, the InGaAs devices exhibit less sensitivity to radiation than the most radiation-hardened GaAs LED's. No significant neutron-induced light-output degradation is observed below 1 x 10/sup 13/ n/cm/sup 2/, while 2 x 10/sup 7/ Co-60 rads are required before any ..gamma..-induced degradation is observed. In addition, a significant portion of the ..gamma..-induced light-output degradation can be recovered by applying forward-bias currents of the order of 50 mA in magnitude. Although ..gamma.. irradiation up to 2 x 10/sup 8/ rads has essentially no effect on the photodiodes, neutron fluences above 2 x 10/sup 14/ n/cm/sup 2/ cause a reduction in responsivity. Analysis of the neutron-induced increases in the photodiode leakage current with the guard ring attached reveals a lifetime-damage constant product of 4 x 10/sup -12/ cm/sup 2//n. Laboratory isolators made up of these emitters and detectors have typical preirradiation current-transfer ratios of 5 x 10/sup -4/ which decrease by a factor of 10 after an irradiation of 1.5 x 10/sup 14/ n/cm/sup 2/.

Barnes, C.E.

1979-08-01T23:59:59.000Z

256

Simulations of the Permian (251 Ma) Monsoon Using CCSM3Simulations of the Permian (251 Ma) Monsoon Using CCSM3 (Community Climate System Model, Version 3)(Community Climate System Model, Version 3)  

E-Print Network (OSTI)

Simulations of the Permian (251 Ma) Monsoon Using CCSM3Simulations of the Permian (251 Ma) Monsoon.A. Shields and J.T.C.A. Shields and J.T. KiehlKiehl NCARNCAR The nature of monsoons has been studied and its impact on society.The nature of monsoons has been studied extensively in the scientific community

257

An Estimation of the Spectral Radius of a Product of Block Ma-Mei-Qin Chen  

E-Print Network (OSTI)

Department of Mathematics and Computer Science, The Citadel, Charleston, SC 29409. Department of Mathematics and Computer Science, Georgia Southern Uni- versity, Statesboro, GA 30460 Submitted by Frank Uhlig ABSTRACT Let C(r) = [Cij], r = 1, 2, ..., R, be block m ? m matrices where Cij(r) are real nonnegative Ni ? Nj

Chen, Mei-Qin

258

MA Doping Analysis on Breeding Capability and Protected Plutonium Production of Large FBR  

Science Conference Proceedings (OSTI)

Spent fuel from LWR can be seen as long-live waste if it is not recycled or as a 'new fuel' resource if it is recycled into the reactors. Uranium and plutonium have been used for 'new fuel' resources from LWR spent fuel as MOX fuel type which is loaded into thermal reactor or fast reactor types. Other actinides from the spent fuel such as neptunium, americium and curium as minor actinide (MA) are considered to be loaded into the reactors for specific purposes, recently. Those purposes such as for increasing protected plutonium production and breeding capability for protected plutonium as well as in the same time those amount of MA can be reduced to a small quantity as a burner or transmutation purpose. Some investigations and scientific approaches are performed in order to increase a material ''barrier'' in plutonium isotope composition by increasing the even mass number of plutonium isotope such as Pu-238, Pu-240 and Pu-242 as plutonium protected composition. Higher material barrier which related to intrinsic properties of plutonium isotopes with even mass number (Pu-238, Pu-240 and Pu-242), are recognized because of their intense decay heat (DH) and high spontaneous fission neutron (SFN) rates. Those even number mass of plutonium isotope contribute to some criteria of plutonium characterization which will be adopted for present study such as IAEA, Pellaud and Kessler criteria (IAEA, 1972; Pellaud, 2002; and Kessler, 2007). The present paper intends to evaluate the breeding capability as a fuel sustainability index of the reactors and to analyze the composition of protected plutonium production of large power reactor based on the FaCT FBR as reference (Ohki, et al., 2008). Three dimensional FBR core configuration has been adopted which is based on the core optimization calculation of SRAC-CITATION code as reactor core analysis and JENDL-3.3 is adopted for nuclear data library. Some MA doping materials are loaded into the blanket regions which can be considered as breeding region for protected plutonium production. Breeding capability of the reactor can be increased effectively by increasing MA doping rate while criticality condition of the reactor is reduced by doping MA. Adopting MA cycle is also effective to increase the isotopic Pu-238 production in plutonium vector composition for denaturing purpose of plutonium.

Permana, Sidik; Suzuki, Mitsutoshi; Kuno, Yusuke [Japan Atomic Energy Agency, Nuclear Non-proliferation Science and Technology Center, 2-4 Shirane Shirakata, Tokai-mura, Ibaraki, 319-1195 (Japan)

2010-06-22T23:59:59.000Z

259

Third-order gas-liquid phase transition and the nature of Andrews critical Tian Ma and Shouhong Wang  

E-Print Network (OSTI)

Third-order gas-liquid phase transition and the nature of Andrews critical point Tian Ma-order gas-liquid phase transition and the nature of Andrews critical point Tian Ma1 and Shouhong Wang2 1 is to study the nature of the Andrews critical point in the gas-liquid transition in a physical

Wang, Shouhong

260

Development of the East Asian monsoon: Mineralogical and sedimentologic records in the northern South China Sea since 20 Ma  

E-Print Network (OSTI)

Development of the East Asian monsoon: Mineralogical and sedimentologic records in the northern Abstract We here reconstruct the past change of the East Asian monsoon since 20 Ma using samples from Ocean monsoon evolution. The consistent variation of these independent proxies since 20 Ma shows three profound

Clift, Peter

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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261

Effects of diagenesis on the Nd-isotopic composition of black shales from the 420 Ma Utica Shale Magnafacies  

E-Print Network (OSTI)

Effects of diagenesis on the Nd-isotopic composition of black shales from the 420 Ma Utica Shale Abstract The Utica black shales were deposited in the Taconic Foreland basin 420 Ma ago. The organic matter in these shales is of marine origin and the timing of deposition of these shales has been constrained

Basu, Asish R.

262

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits  

Science Conference Proceedings (OSTI)

A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. ...

Choong H. Hyun; M. S. Shur; N. C. Cirillo

2006-11-01T23:59:59.000Z

263

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

264

Nanocrystals cylindrical microcavities exploiting thin-walled InGaAs/GaAs microtubes  

Science Conference Proceedings (OSTI)

This paper relies on the design and fabrication of CdSe/ZnS core/shell colloidal nanocrystals (NCs) cylindrical microcavities for microphotonics applications. The fabrication technology relies on the release of the strain in strained heterostructures, ... Keywords: Colloidal nanocrystals, InGaAs/GaAs microtubes, Strained multilayer

C. Giordano; M. T. Todaro; A. Salhi; L. Martiradonna; I. Viola; A. Passab; L. Carbone; G. Gigli; A. Passaseo; M. De Vittorio

2007-05-01T23:59:59.000Z

265

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

266

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

DOE Green Energy (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

267

u.s. DEPARTIIIENT OF ENERGY EERE PROJECT MA N A GE M E~ T CENT  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MA N A GE M E~ T CENT MA N A GE M E~ T CENT ER NEPA DETERlIlINATION Page 1 of2 RECIPIENT:Power Environmental Energy Research Institute STATE: CO PROJECT TITLE: Novel Multidimensional Tracers for Geolhermallnter-Well Diagnostics Funding Opportunity Announcement Number DE-PS36-09G099018 Procurement Instrument Number OE·EEOOO3032 NEPA Control Number GFO-1 0-345 CID Number G03032 Based on my review orlhe Information concerning the proposed action, as NEPA Compliance Officer (authoriud under DOE Order 4SI.IA),1 have made the following determination: ex, EA, [IS APPENDIX AND NUMBER: Description: 83.1 Onsile and offsite site characterization and environmental monitoring. including siting, construction (or modification), operation, and dismantlement or closing (abandonment) of characterization and monitoring devices and siting,

268

MHK Projects/GCK Technology Cape Cod Canal MA US | Open Energy Information  

Open Energy Info (EERE)

GCK Technology Cape Cod Canal MA US GCK Technology Cape Cod Canal MA US < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":5,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"500px","height":"350px","centre":false,"title":"","label":"","icon":"File:Aquamarine-marker.png","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.7433,"lon":-70.6093,"alt":0,"address":"","icon":"http:\/\/prod-http-80-800498448.us-east-1.elb.amazonaws.com\/w\/images\/7\/74\/Aquamarine-marker.png","group":"","inlineLabel":"","visitedicon":""}]}

269

u.s. DEPARTMENT OF ENERGY EERE PROJECT MA->.IAGEMENT CENTER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MA->.IAGEMENT CENTER MA->.IAGEMENT CENTER NEPA DETFRMINATION RECIPIENT;AWS Truepower, LlC Page 1 of2 STATE: NY PROJECT TITLE: National Offshore Wind Energy Resource and Design Data Campaign - Analysis and Collaboration Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CIO Number DE-FOA-0000414 DE-EEOOO5372 GF0-0005372-OO1 0 Based on my review oflhe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering, analysis, and dissemination Information gathering (including, but not limited to, literature surveys, inventories, site visits, and audits), data analysis (including, but not limited to, computer modeling), document preparation (including, but not limited to, conceptual design,

270

MHK Projects/GCK Technology Merrimack River Amesbury MA US | Open Energy  

Open Energy Info (EERE)

River Amesbury MA US River Amesbury MA US < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":5,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"500px","height":"350px","centre":false,"title":"","label":"","icon":"File:Aquamarine-marker.png","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.8549,"lon":-70.9267,"alt":0,"address":"","icon":"http:\/\/prod-http-80-800498448.us-east-1.elb.amazonaws.com\/w\/images\/7\/74\/Aquamarine-marker.png","group":"","inlineLabel":"","visitedicon":""}]}

271

u.s. DEPARTMENT OF ENERGY EERE PROJECT MA:-.IAGEMENT CENTER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MA:-.IAGEMENT CENTER MA:-.IAGEMENT CENTER NEPA DETERMINATION RECIPIENT:Utah State University PROJECT TITLE: Alternative and Unconventional Energy Research and Development Page 1 of2 STATE: UT Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number COP DE-EEOOO3114 GF0-0003114-OO2 0 Based on my review or the information concerning the proposed action, as NEPA Compliance Officer (authorized under DO E Order 45 1.1A), I have made the following determination: CX, EA, [IS APPENDIX AND NUMBER: Description: B3.6 Siting. oonstruction (or modification), operation. and decommissioning of facilities for indoor bench-scale research projects and oonventionallaboratory operations (for example. preparation of chemical standards and sample analysis):

272

U.S. DEPARTMENT OF ENERGY EERE PROJECT MA>" AGEMENT CENTER NEPA DETERMINATION  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MA>" AGEMENT CENTER MA>" AGEMENT CENTER NEPA DETERMINATION RECIPIENT:Oregon Department of Energy PROJECT TITLE: Oregon EECBG Fonnula - City of Winston Page I of3 STATE: OR Funding Opportunity Announcement Number DE-FOA-OOOOO13 Procurement Instrument Number NEPA Control Number em Number EEO Based on my review crthe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4Sl.I A), I have made the (ollowing determination: ex, EA, EIS APPENDIX AND NUMBER: Description : B1.3 Routine maintenance activities and custodial services for buildings, structures, rights-of-way, infrastructures (e.g .* pathways, roads, and railroads ), vehides and eqUipment, and localized vegetatJon and pest control, dunng which operations may be suspended and resumed. Custodial services are activities to preserve facility appearance, worl

273

U.S. DEPARTMENT OF ENERGY EERE PROJECT MA,"iAGEMENTCENTER NEPADETl!RMINATION  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MA,"iAGEMENTCENTER MA,"iAGEMENTCENTER NEPADETl!RMINATION RECIPIENT:CU Cfeantech -- University of Colorado PROJECT TITLE: CU Cleantech New Venture Challenge Page 1 of2 STATE: CO Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number elD Number DE-FOAOOOOS70 EE0005600 GFO-OOO5600-OO1 0 Based on my review of the information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4Sl.1A), I have made the (ollowing determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering, analysis, and disseminatio n Information gathering (including, but not limited to, literature surveys, inventories, site visits, and audits). data analysis (including. but not limited to, computer modeling), document preparation (including. but not limited to, conceptual design,

274

u.s. DEPARTMENT OF ENERGY EERE PROJECT MA..\lAGEMENT CENTER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

lAGEMENT CENTER lAGEMENT CENTER NFPA DEl'ERAllNAIION RECIPIENT:MA DEPT. OF ENERGY RESOURCES PROJECT TITLE: STATE ENERGY PROGRAM (SEP) Page 1 of2 STATE: MA Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CIO Number DE·FOA.()()()()643 R130372 GF0-0130372-OO1 Based on my review of the information concerning the proposed action, as NEPA Compliance Officer (authori;.o;ed under DOE Order 45 1.lA), I have made the following de termination : ex, EA, EIS APPENDIX AND NUMBER: Description: A11 Technical advice and as sistance to o rganizations A9 Info rm at ion gathering, analysis, and d issemination Rational for detennination: Technical advice and planning assistance to international, national, state, and local organizations. Information gathering (including, but nollimited to, literature surveys, inventories, site visits, and

275

U.S. DEP.~TMENT OF ENERGY EERE PROJECT MA,\jAGEMENT CENTER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MA,\jAGEMENT CENTER MA,\jAGEMENT CENTER NEPA DETERMINATION Page I of2 RECIPIENT: EECBG - American Samoa Government Territorial Energy Office STATE: AS PROJECT TITLE: Improving Recycling Capacity and Solid Waste Education in American Samoa Funding Opportunity Announcement Number PrO(urement Instrument Number DE-EEOOOOB34 NEPA Control Number GFO-OOOO634.Q01 em Number o Based on my review oftbe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A), I have made the (ollowing determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 81 .31 installation or relocation of machinery and equipment Installation or relocation and operation of machinery and equipment (including, but not limited la, laboratory equipment, electronic hardware, manufacturing machinery, maintenance equipment, and health and safety equipment), provided that

276

MaGe - a Geant4-based Monte Carlo framework for low-background experiments  

E-Print Network (OSTI)

A Monte Carlo framework, MaGe, has been developed based on the Geant4 simulation toolkit. Its purpose is to simulate physics processes in low-energy and low-background radiation detectors, specifically for the Majorana and Gerda $^{76}$Ge neutrinoless double-beta decay experiments. This jointly-developed tool is also used to verify the simulation of physics processes relevant to other low-background experiments in Geant4. The MaGe framework contains simulations of prototype experiments and test stands, and is easily extended to incorporate new geometries and configurations while still using the same verified physics processes, tunings, and code framework. This reduces duplication of efforts and improves the robustness of and confidence in the simulation output.

Yuen-Dat Chan; Jason A. Detwiler; Reyco Henning; Victor M. Gehman; Rob A. Johnson; David V. Jordan; Kareem Kazkaz; Markus Knapp; Kevin Kroninger; Daniel Lenz; Jing Liu; Xiang Liu; Michael G. Marino; Akbar Mokhtarani; Luciano Pandola; Alexis G. Schubert; Claudia Tomei

2008-02-06T23:59:59.000Z

277

On Larkin-Imry-Ma State of 3He-A in Aerogel  

E-Print Network (OSTI)

Superfluid 3He-A shares the properties of spin nematic and chiral orbital ferromagnet. Its order parameter is characterized by two vectors d and l. This doubly anisotropic superfluid, when it is confined in aerogel, represents the most interesting example of a system with continuous symmetry in the presence of random anisotropy disorder. We discuss the Larkin-Imry-Ma state, which is characterized by the short-range orientational order of the vector l, while the long-range orientational order is destroyed by the collective action of the randomly oriented aerogel strings. On the other hand, sufficiently large regular anisotropy produced either by the deformation of the aerogel or by applied superflow suppresses the Larkin-Imry-Ma effect leading to the uniform orientation of the vector l. This interplay of regular and random anisotropy allows us to study many different effects.

G. E. Volovik

2007-04-19T23:59:59.000Z

278

On Larkin-Imry-Ma State of 3He-A in Aerogel  

E-Print Network (OSTI)

Superfluid 3He-A shares the properties of spin nematic and chiral orbital ferromagnet. Its order parameter is characterized by two vectors d and l. This doubly anisotropic superfluid, when it is confined in aerogel, represents the most interesting example of a system with continuous symmetry in the presence of random anisotropy disorder. We discuss the Larkin-Imry-Ma state, which is characterized by the short-range orientational order of the vector l, while the long-range orientational order is destroyed by the collective action of the randomly oriented aerogel strings. On the other hand, sufficiently large regular anisotropy produced either by the deformation of the aerogel or by applied superflow destroys the Larkin-Imry-Ma effect leading to the uniform orientation of the vector l. This interplay of regular and random anisotropy allows us to study many different effects.

Volovik, G E

2007-01-01T23:59:59.000Z

279

mise jour: 09/12/2009 Rapport de ma mission au Pakistan  

E-Print Network (OSTI)

1 mise à jour: 09/12/2009 Rapport de ma mission au Pakistan ?cole de recherche CIMPA du 22 au 28://www.lums.edu.pk/> pour y donner une conférence dans le cadre de French Science Tour in Pakistan Science Tour in Pakistan. · Samedi 28 février, 8 exposés organisés par Juergen Herzog permettant à des

Waldschmidt, Michel

280

mise jour: 30/03/2009 Rapport de ma mission au Pakistan  

E-Print Network (OSTI)

1 mise à jour: 30/03/2009 Rapport de ma mission au Pakistan ?cole de recherche CIMPA du 22 au 28://www.lums.edu.pk/> pour y donner une conférence dans le cadre de French Science Tour in Pakistan Science Tour in Pakistan. · Samedi 28 février, 8 exposés organisés par Juergen Herzog permettant à des

Waldschmidt, Michel

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED  

Science Conference Proceedings (OSTI)

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm{sup 2}V{sup -1}s{sup -1} at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

Broxtermann, D.; Sivis, M.; Malindretos, J.; Rizzi, A. [IV. physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2012-03-15T23:59:59.000Z

282

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

283

GaN Nanopore Arrays: Fabrication and Characterization  

E-Print Network (OSTI)

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

Wang, Yadong

284

Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape ...  

Science Conference Proceedings (OSTI)

... Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape Memory Alloys. Peng Zhao (Dept. of Materials Science and ...

285

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

286

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

287

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment  

E-Print Network (OSTI)

Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ...

Palacios, Tomas

288

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

289

GaAs photoconductive semiconductor switch  

DOE Patents (OSTI)

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

290

GaN: Defect and Device Issues  

SciTech Connect

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

1998-11-09T23:59:59.000Z

291

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network (OSTI)

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

292

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Fainman, "Influence of chlorine on etched sidewalls inFainman, Influence of chlorine on etched sidewalls inthe RIBE of GaAs with chlorine (Cl 2 ), ion beam sputtering

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

293

K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

294

JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

295

MaRIE X-Ray Free-Electron Laser Pre-Conceptual Design  

SciTech Connect

The proposed Matter-Radiation Interactions in Extremes (MaRIE) facility at the Los Alamos National Laboratory will include a 50-keV X-Ray Free-Electron Laser (XFEL), a significant extension from planned and existing XFEL facilities. To prevent an unacceptably large energy spread arsing from energy diffusion, the electron beam energy should not exceed 20 GeV, which puts a significant constraint on the beam emittance. A 100-pC baseline design is presented along with advanced technology options to increase the photon flux and to decrease the spectral bandwidth through pre-bunching the electron beam.

Carlsten, Bruce E. [Los Alamos National Laboratory; Barnes, Cris W. [Los Alamos National Laboratory; Bishofberger, Kip A. [Los Alamos National Laboratory; Duffy, Leanne D. [Los Alamos National Laboratory; Heath, Cynthia E. [Los Alamos National Laboratory; Marksteiner, Quinn R. [Los Alamos National Laboratory; Nguyen, Dinh Cong [Los Alamos National Laboratory; Russell, Steven J. [Los Alamos National Laboratory; Ryne, Robert D. [Los Alamos National Laboratory; Sheffield, Richard L. [Los Alamos National Laboratory; Simakov, Evgenya I. [Los Alamos National Laboratory; Yampolsky, Nikolai A. [Los Alamos National Laboratory

2011-01-01T23:59:59.000Z

296

SIMULATION AND OPTIMISATION OF A 100MA DC PHOTO-INJECTOR  

SciTech Connect

A prototype 100mA injector is presently being designed and manufactured jointly between Thomas Jefferson National Accelerator Facility (JLab) and Advanced Energy Systems (AES). This paper discusses the physics optimization and performance of the injector which has been studied using the space-charge tracking code ASTRA. The objective is to operate the 7MeV injector with 135pC electron bunches at 748.5MHz repetition rate. We show that the longitudinal and transverse electron bunch properties can be realized within the constraints of the design.

Fay Hannon; Carlos Hernandez-Garcia

2006-08-03T23:59:59.000Z

297

An Analysis of Wind Power Development in the Town of Hull, MA  

DOE Green Energy (OSTI)

Over the past three decades the Town of Hull, MA has solidified its place in U.S. wind energy history through its leadership in community-based generation. This is illustrated by its commissioning of the first commercial-scale wind turbine on the Atlantic coastline, the first suburban-sited turbine in the continental United States, pursuit of community-based offshore wind, and its push toward creating an energy independent community. The town's history and demographics are briefly outlined, followed by experience in projects to provide wind power, including pre-construction and feasibility efforts, financial aspects, and market/industry factors.

Adams, Christopher

2013-06-30T23:59:59.000Z

298

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes  

E-Print Network (OSTI)

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

Cornelius S. Bausch; Aune Koitme; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

2013-05-06T23:59:59.000Z

299

Recent progress in InGaAsSb/GaSb TPV devices  

DOE Green Energy (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

300

Addition-based exponentiation modulo 2k A. Fit-Florea, D.W. Matula and M.A. Thornton  

E-Print Network (OSTI)

Addition-based exponentiation modulo 2k A. Fit-Florea, D.W. Matula and M.A. Thornton A novel method doi: 10.1049/el:20057538 A. Fit-Florea, D.W. Matula and M.A. Thornton (Southern Methodist University', Electron. Lett., 1994, 30, (25), pp. 2115­ 2116 3 Fit-Florea, A., and Matula, D.W.: `A digit

Thornton, Mitchell

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
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301

Impacts of Historical Land Use on Soil Nitrogen Cycles in Falmouth, MA and the Threat of Chronic N Amendment Demonstrated at the  

E-Print Network (OSTI)

Amendment Demonstrated at the Harvard Forest LTER, Petersham, MA Brook Brouwer1 Advisor: Christopher Neill2, in Petersham, MA. At each site I measured: pH, C:N ratios, extractable inorganic nitrogen pools, net N Amendment Demonstrated at the Harvard Forest LTER, Petersham, MA" Brook Brouwer Introduction

Vallino, Joseph J.

302

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

303

GaNPAs Solar Cells Lattice-Matched To GaP: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Geisz, J. F.; Friedman, D. J.; Kurtz, S.

2002-05-01T23:59:59.000Z

304

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

305

Elemental characterization of LL-MA radioactive waste packages with the associated particle technique  

Science Conference Proceedings (OSTI)

The French Alternative Energies and Atomic Energy Commission (CEA) and National Radioactive Waste Management Agency (ANDRA) are conducting an R and D program to improve the characterization of long-lived and medium activity (LL-MA) radioactive waste packages with analytical methods and with non-destructive nuclear measurements. This paper concerns fast neutron interrogation with the associated particle technique (APT), which brings 3D information about the waste material composition. The characterization of volume elements filled with iron, water, aluminium, and PVC in bituminized and fibre concrete LL-MA waste packages has been investigated with MCNP [1] and MODAR data analysis software [2]. APT provides usable information about major elements presents in the volumes of interest. However, neutron scattering on hydrogen nuclei spreads the tagged neutron beam out of the targeted volume towards surrounding materials, reducing spatial selectivity. Simulation shows that small less than 1 L targets can be characterised up to the half-radius of a 225 L bituminized drum, the matrix of which is very rich in hydrogen. Deeper characterization in concrete is possible but limited by counting statistics due to photon attenuation in this dense matrix and, unless large inspection volumes are considered, by the lack of spatial selectivity of the tagged neutron beam due to neutron scattering. (authors)

Perot, B.; Carasco, C.; Toure, M.; El Kanawati, W.; Eleon, C. [CEA, DEN, Cadarache, Nuclear Measurement Laboratory, F-13108 Saint-Paul-lez-Durance (France)

2011-07-01T23:59:59.000Z

306

 

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MA Massachusetts Total Sum City, County, and SEO Allocations MA Massachusetts Total Sum City, County, and SEO Allocations All $ 42,230,600 MA Massachusetts State Energy Office $ 14,752,100 MA Amherst City $ 162,000 MA Arlington City $ 159,700 MA Attleboro City $ 179,600 MA Barnstable Town City $ 202,400 MA Beverly City $ 169,600 MA Billerica City $ 180,200 MA Boston City $ 6,506,200 MA Brockton City $ 865,000 MA Brookline City $ 494,400 MA Cambridge City $ 1,139,400 MA Chelsea City $ 164,000 MA Chicopee City $ 499,100 MA Everett City $ 149,300 MA Fall River City $ 861,300 MA Fitchburg City $ 168,000 MA Framingham City $ 657,000

307

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from {approx}1 x 10{sup 7} to {approx}5 x 10{sup 8} cm{sup -2} across the substrate. Typical diameters are {approx}110 nm for GaP NWs and {approx}220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is {approx}0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Li, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Tu, C. W. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2012-01-30T23:59:59.000Z

308

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

309

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amlie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganire, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benot

310

Procurement Directors FROM: Office of Procurement and Assistance Policy, MA-61  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

July 25,2008 July 25,2008 Procurement Directors FROM: Office of Procurement and Assistance Policy, MA-61 Office of Procurement and Assistance Management SUBJECT: Acquisition Letter 2008-02, Audit Management SUMMARY: Attached is Acquisition Letter (AL) 2008-02, Audit Management. It provides guidance to contracting officers on effective management of contract audits for non-M&O prime ;ontracts as well as subcontracts under management and operating (M&O) contracts. This Acquisition Letter replaces AL 2006-12, Corporate Audit Management Program (CAMP), which is cancelled. This Flash and its attachment will be online within a day, at the following website: http:l/mananernent.ener~.~ov/polic~ guidance/volicv flashes-htm. Questions concerning this policy flash should be directed to Helen Oxberger at (202) 287-1332

311

U.S. DEPARTMENT OF ENERGY EERE PROJECT MA.>.JAGEMENT CENTER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

, .* !. , .* !. U.S. DEPARTMENT OF ENERGY EERE PROJECT MA.>.JAGEMENT CENTER NEPA DETERMINATION RECIPIENT:Laram!e County Community College PROJECT TITLE: LeGe Ulilty-Scale Wind Energy Technology Page 1 of2 STATE: WY Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-PS36-09G099OO9 DE-EEOOOO538 GFO-10-052 0 Based on my review of the information concerning the proposed action, as Nt:PA Compliance Officer (autbori7.ed under DOE Order 451.1A), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathenng (including, but not limited to, literature surveys, Inventones, audits), data analySIS (including computer modeling), document preparation (such as oonceptual des'9n or feasibility studies, analytical energy supply

312

U.S. DEP.'\RTMENT OF ENERGY EERE PROJECT MA.1II AGEMENT CENTER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

'\RTMENT OF ENERGY '\RTMENT OF ENERGY EERE PROJECT MA.1II AGEMENT CENTER NEPA DETERMINATION RECIPIENT :Freshwater Wind I. lLC PROJECT TITLE: Shallow Water Offshore Wind System Optimization for the Great Lakes Page 1 of2 STATE: OH Funding Opportunity Announcement Number Procurement Instl"ument Number NEPA Control Number elD Number DE-FOA.Q000415 DE-EEOOOO5488 GFO-OOO5488-001 0 Based on my nview or the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SUA),. have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathertng, analysis, and dissemination Information gathering (including, but not limited to, literature surveys, inventories, site Visits, and audits). data analysis

313

TO: Procurement Directors FROM: Office of Procurement and Assistance Policy, MA-61  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

August 23,2010 August 23,2010 TO: Procurement Directors FROM: Office of Procurement and Assistance Policy, MA-61 Office of Procurement and Assistance Management SUBJECT: Acquisition Templates SUMMARY: On March 29,2010, four draft acquisition templates (Confidentiality Certificate, Conflicts of Interest Certificate, Letter to Unsuccessful Offeror and Letter to Successful Offeror) were distributed for Procurement Director (PD) and Head of Contracting Activity (HCA) review and comment. All comments received were considered and changes were made as appropriate. The final versions of the four aforementioned acquisition templates will be e-mailed directly to the Procurement Directors and made available in the STRIPES Library. This Flash and its attachments will be available online within a day, at the following website:

314

u.s. DEP.-\RTMENT OF ENERGY EERE PROJECT MA. AGEMENT CENTER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

RTMENT OF ENERGY RTMENT OF ENERGY EERE PROJECT MA. AGEMENT CENTER NEPA DETERMINATION RECIPIENT :louisiana Department of Natural Resources PROJECT TITLE: State of louisana ARRA-EECBG-St. James Parish (Tl Page 1 of2 STATE : LA Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA-OOOOO13 EEOOOO735 0 Based on my review or lhe information concerning tbe proposed action, as NEPA Compliance Officer (autborized under DOE Order 4S1.1A), I bave made the (ollowing determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 85.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do nol increase the indoor concentrations of potentially harmful substances. These actions may involve financia

315

DOE Challenge Home Case Study, Transformation, Inc., Production House, Devens, MA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Production House Production House Devens, MA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

316

DEPART:MENT OF ENERGY EERE PROJECT MA..'JAGEMENT CENTER NEPA DETERMINATION  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MENT OF ENERGY MENT OF ENERGY EERE PROJECT MA..'JAGEMENT CENTER NEPA DETERMINATION Page 1 of2 RI<:CIPIENT:Wyoming Business Council, State Energy Office STATE: WY PROJECT TITLE: State Energy Program (SEP) PY 2012 Forumla Grant funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA-0000643 DE-FG26-07NT43207 GF(H)()43207-OO1 Based on my review of the information concerning the proposed aetion, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering, analysis, and dissemination A11 Technical advice and assistance to organizations Rational for detennination: Information gathering (including, but not limited to, literature surveys, inventories, site visits, and

317

EERE PROJECT MA.NAGEMENT CENTER NEPA DFTFIU.1INATION PROJECT  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atchison Atchison u.s. DI!PARThIl1NT OF l?NERGY EERE PROJECT MA.NAGEMENT CENTER NEPA DFTFIU.1INATION PROJECT TITLE: EECBG DE-EEOOOO727 Atchison Library Ground Source Heat Pump Page 1 of2 STATE : KS Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE FOA 0000013 0 Based on my review of the information tORcuning the proposed action, as NEPA Compliam::e Officer (authorized under DOE Order 451.1A), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical

318

U.S. DEPARTI\lIENT OF ENERGY EERE PROJECT MA."IAGEMENT CENTER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

lIENT OF ENERGY lIENT OF ENERGY EERE PROJECT MA."IAGEMENT CENTER NEPA DETERMINATION RECIPIENT:Louisiana State University and A&M College Page 1 of2 STATE: LA PROJECT TITLE: Geothennal Resource Development with Zero Mass Withdrawal, Engineered Free Convection, and Wellbore Energy Conversion Funding Opportunity ADDounc:ement Number Procurement Instrument Number NEPA Control Number CID Number DE-F0-0000336 OE-EEOOO5125 GF0-0005125-001 0 Based on my review (lrtbe infor madOD concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A),1 have' made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (induding, but not limited to, literature surveys, inventories, audits). data analysIs (including

319

U.S. DEPAR.Th.IENT OF ENERGY EERE PROJECT MA'\IAGEME~TCE~TER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Th.IENT OF ENERGY Th.IENT OF ENERGY EERE PROJECT MA'\IAGEME~TCE~TER NEPA DETFID..ITNATION RECIPIENT:Ciemson University PROJECf TITLE: Clemson University 15MW Hardware-In-the-Loop (HIL) Grid Simulator Page 1 of2 STATE: SC Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number N/A (DNFA) DE-EE0005723 GF0-0005723-001 Based on my review of the information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 45l.1A), l have made tbe foUowing determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information Information gathering (including, but not limited to, literature surveys, inventories, site visits, and audits), gathering, analysis, data analysis (including, but not limited to, computer modeling), document preparation (including, but

320

Growth orientation dependent photoluminescence of GaAsN alloys  

SciTech Connect

We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Sato, Shinichiro [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

2012-01-16T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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321

InGaAs and Ge MOSFETs with high ? dielectrics  

Science Conference Proceedings (OSTI)

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy

W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong

2011-04-01T23:59:59.000Z

322

Radiation Hard AlGaN Detectors and Imager  

Science Conference Proceedings (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

323

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

324

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

325

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser  

SciTech Connect

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-30T23:59:59.000Z

326

Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence  

Science Conference Proceedings (OSTI)

A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.

Chin, A.K.; Keramidas, V.G.; Johnston, W.D. Jr.; Mahajan, S.; Roccasecca, D.D.

1980-02-01T23:59:59.000Z

327

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization  

DOE Green Energy (OSTI)

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. The GaInSb layers were grown by organometallic vapor phase epitaxy (OMVPE) and the InGaAsSb lattice-matched layers were grown by liquid phase epitaxy (LPE). Device fabrication steps include unannealed p-type ohmic contacts, annealed Sn/Au n-type ohmic contacts, and a thick Ag top-surface contact using a lift-off process. Devices are characterized primarily by dark I-V, photo I-V, and quantum efficiency measurements, which are correlated to microscopic and macroscopic material properties. Particular emphasis has been on material enhancements to increase quantum efficiency and decrease dark saturation current density. TPV device performance is presently limited by the base diffusion length, typically 1 to 2 microns.

Hitchcock, C.; Gutmann, R.; Borrego, J.; Ehsani, H.; Bhat, I. [Rensselaer Polytechnic Inst., Troy, NY (United States); Freeman, M.; Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

328

Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells  

Science Conference Proceedings (OSTI)

The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

Baidus, N. V. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Vainberg, V. V. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine); Zvonkov, B. N. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Pylypchuk, A. S., E-mail: pylypchuk@iop.kiev.ua; Poroshin, V. N.; Sarbey, O. G. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)

2012-05-15T23:59:59.000Z

329

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

330

II4, Compositionally-Graded Layers Composed of Tandem InGaAs ...  

Science Conference Proceedings (OSTI)

The specification of the 6 miscut is important because it provides step ..... of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions.

331

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm, Mingwei Zhu  

E-Print Network (OSTI)

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photo- luminescence, m's overall power efficiency. Linearly polarized light can be efficiently generated in GaInN/GaN-based light-emitting

Wetzel, Christian M.

332

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys ...  

Science Conference Proceedings (OSTI)

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys Based on the ... Resources for the Selection and Use of Interatomic Potentials in Atomistic...

333

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

contractors supported the dismantlement including asbestos removal and concrete cutting, electrical, and HVAC. Project support functions were provided by GA organizations...

334

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 {mu}m  

Science Conference Proceedings (OSTI)

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 {mu}m when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 Degree-Sign C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.

Ye Hong; Song Yuxin; Wang Shumin [Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296 (Sweden); Gu Yi [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-12-15T23:59:59.000Z

335

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots  

Science Conference Proceedings (OSTI)

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2012-04-15T23:59:59.000Z

336

Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb  

DOE Green Energy (OSTI)

GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality.

Dutta, P.S.; Ostrogorsky, A.G.; Gutmann, R.J.

1997-05-01T23:59:59.000Z

337

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor  

Science Conference Proceedings (OSTI)

Keywords: Ga vacancies, GaN growth, gas feeding method, optical property, rapid thermal chemical vapor deposition (RTCVD), yellow luminescence

Sun Jung Kim; Young Hun Seo; Kee Suk Nahm; Yun Bong Hahn; Hyun Wook Shim; Eun-Kyung Suh; Kee Young Lim; Hyung Jae Lee

1999-08-01T23:59:59.000Z

338

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-01-01T23:59:59.000Z

339

Functional Imprinting Structures on GaN-Based Light-Emitting ...  

Science Conference Proceedings (OSTI)

Keywords: GaN, light-emitting diode (LED), imprinting technology, far-field pattern modulation, light extraction. 1. Introduction. GaN-based light-emitting diodes...

340

Life tests of Nichia AlGaN/InGaN/GaN blue-light-emitting diodes  

SciTech Connect

We report on results of life testing Nichia NLPB500 blue LEDs in a temperature controlled chamber, with computer automation of equipment operation and data collection. The tests began with 18 newer (Nichia batch 4B0001) and two older (Nichia batch S403024, acquired a year earlier) LEDs, operated at 20 mA continuous wave (CW) and 23{degree}C. Light from each LED was coupled to an optical fiber and fed directly to individual photodetectors. General trend for the 18 newer LEDs was for the output intensity to increase at a faster rate within the first 50 h and then at a slower rate of the remainder of the first test. The output intensity of the two older LEDs increase within the first 50 h then decreased during the remainder of the first 1000 h. All 20 of the LEDs in the first 1000-h test were subjected to a second 1650-h test at 23{degree}C and at currents 20-70 mA CW. Only one LED, an older device, suffered a soft failure during this second test. The remaining LEDs underwent a third test at 30{degree}C and a fourth test at 35{degree}C, all at various currents. We will perform failure analysis.

Helms, C.J.; Berg, N.H.; Barton, D.L.; Osinski, M

1996-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

On-Demand Information Portals for Disaster Yiming Ma, Dmitri V. Kalashnikov, Ram Hariharan, Sharad Mehrotra, Nalini Venkatasubramanian,  

E-Print Network (OSTI)

, and such information is indeed valuable to disaster managers or even citizens in their response. In this paper we in the response and planning during or after the disaster. This motivates us in the direction of an "InformationOn-Demand Information Portals for Disaster Situations Yiming Ma, Dmitri V. Kalashnikov, Ram

Kalashnikov, Dmitri V.

342

China's Energy Situation and Its Implications in the New by Hengyun Ma, Les Oxley and John Gibson  

E-Print Network (OSTI)

and the energy economy, in particular. Keywords: China; Energy; Fossil fuels; Renewable Energy JEL by an investigation and analysis of China's energy resources, including renewable energy. In the third section we1 China's Energy Situation and Its Implications in the New Millennium by Hengyun Ma, Les Oxley

Hickman, Mark

343

Geochemical records in the South China Sea: implications for East Asian summer monsoon evolution over the last 20 Ma  

E-Print Network (OSTI)

Geochemical records in the South China Sea: implications for East Asian summer monsoon evolution past changes in the East Asian summer monsoon over the last 20 Ma using samples from Ocean Drilling and combined review suggests that the long-term evolution of the East Asian summer monsoon is similar

Clift, Peter

344

A review of geomagnetic cutoff rigidities for earth-orbiting spacecraft D.F. Smart *, M.A. Shea  

E-Print Network (OSTI)

A review of geomagnetic cutoff rigidities for earth-orbiting spacecraft D.F. Smart *, M.A. Shea Air Geomagnetic cutoff rigidities are a quantitative measure of the shielding provided by the earth?s magnetic field. More precisely, geomagnetic cutoff rigidities predict the energetic charged particle transmission

Shepherd, Simon

345

Bonding and gap states at GaAs-oxide interfaces  

Science Conference Proceedings (OSTI)

The nature of bonding and possible causes of Fermi level pinning at high mobility-high dielectric constant oxide GaAs:HfO"2 interfaces are discussed. It is argued that these are atoms with defective bonding, rather than states due to the bulk semiconductor ... Keywords: GaAs, bonding, interface

John Robertson; Liang Lin

2011-04-01T23:59:59.000Z

346

?ot8rh QI ahnloal Corporation In Hart IUnover, Ma86rohusett8,  

Office of Legacy Management (LM)

GE 1 GE 1 ;" qr)-1 s?llq ' p raspy.. c" ifa K. mris I talked with Hr. Wllllm cIF(Iy, Metrllurgist, Wnlon CarbId@ Nuclear cOrp8ny, 08k B&t&$@, Tenne66ee, on April 26, 1961. He informed me th&t the #rtioMl Northern birislon, Ame~ic6.n ?ot8rh QI ahnloal Corporation In Hart IUnover, Ma86rohusett8, la pePfopn1~ lo8lve forming studier for the. ilnion olo)w Wuolem Conpmy "p l7?JHa). The work at National Northern l#rirc.- alon ir under the 6upenl6lon of Ehsll Phillpohuc4~, v of Spealrl Prcbduots. The @ox& to data ha8 been pwfonwd wlth 430 strlnle66 rteel and urma%um metal - both hot snb 0018 wor4c have been performed at pr688u~r fmm 100,000 to 900,000 prl. The shape of the pleu88 na not dlrolored. In 6<lon work ha6 been done with

347

Alcator C-Mod Experiments in Support of the ITER Baseline 15 MA Scenario  

SciTech Connect

Experiments on Alcator C-Mod have addressed several issues for the ITER 15 MA baseline scenario from 2009-2012. Rampup studies show ICRF can save significant V-s, and that an H-mode in the ramp can be utilized to save 50% more. ICRF modifications to li(1) are minimal, although the Te profile is peaked relative to ohmic in the plasma center, and alter sawtooth onset times. Rampdown studies show H-modes can be routinely sustained, avoiding an OH coil over-current associated with the H-L transition, that fast rampdowns are preferred, the density drops with Ip, and that the H-L transition occurs at Ploss/Pthr,LH ~ 1.0-1.3 at n/nGr ~ 0.85. Flattop plasmas targeting ITER baseline parameters have been sustained for 20 ?E or 8-13 ?CR, but only reach H98 ~ 0.6 at n/nGr = 0.85, rising to 0.9 at n/nGr = 0.65.

C Kessel, et al

2013-05-07T23:59:59.000Z

348

MA FI QPR Scoring Elements 4th Qtr FY 2009 Revision v1.xls  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Reference Reference Due Date Element Measure Critical? Score > ≤ 8/15 8/15 8/22 8/22 95% 100% 80% 95% 0% 80% 2.0% 1.8% 2.0% 0.0% 1.8% 1.0% 0.5% 1.0% 0.0% 0.5% 8/30 8/30 99.9% 0.0% 99.9% 9/30 9/30 9/30 9/30 Program specific elements, negotiated with Programs: Program specific measures, negotiated with Programs: Overall Score: Green * All critical elements green, and * No more then one non-critical element yellow Yellow * Any critical element yellow, or * Any non-critical red, or * Two or more non-critical elements yellow Red * Any critical element red or * Two or more non-critical elements red TYRT September 30, 2009 Input submitted to update TYRT Submission timeliness 1 1 2 2 Enter Date or Percentage Proximity to spending target August 15, 2009 Overall Score: Yes MA F&I Quarterly Performance Report

349

Decreasing Slip Rates From12.8 Ma to Present on the Solitario Canyon Fault at Yucca Mountain, Nevada  

DOE Green Energy (OSTI)

The Solitario Canyon fault, which bounds the west side of Yucca Mountain, Nevada, is the closest fault with Quaternary offset adjacent to the proposed spent nuclear fuel and high-level radioactive waste repository. Dip-slip offset between 12.8 and 10.7 Ma is determined from lithostratigraphic displacement in boreholes USW H-3 and USW WT-7, drilled in the footwall and hanging wall, respectively. The base of the 12.8-Ma Topopah Spring Tuff is interpreted to have 463.3 m of separation across the fault, an average dip slip rate of 0.036 mm/yr. Previous researchers identified a geothermal system active from 11.5 to 10.0 Ma with peak activity at 10.7 Ma that resulted in pervasive alteration of vitric rock to zeolitic minerals where the rocks were in the ground-water saturated zone. The contact between vitric (V) and pervasively zeolitic (Z) rocks cuts across the lithostratigraphic section and offset of this V-Z boundary can be used to measure slip rates between 12.8 and 10.7 Ma. In H-3, the V-Z boundary is 138.4 m below the base of the vitric, densely welded subzone of the Topopah Spring Tuff (Tptpv3). In WT-7, although the V-Z boundary is identified at the base of the Tptpv3, borehole video, cuttings, and geophysical log data indicate the Tptpv3 has well-developed zeolitic alteration along fractures, and this implies 19.5 m of the total thickness of Tptpv3 (and probably additional overlying crystallized rocks) also were in the saturated zone by 10.7 Ma. The V-Z relations across the Solitario Canyon fault in H-3 and WT-7 indicate a minimum of 157.9 m of separation before 10.7 Ma, which is 34.1 percent of the total slip of the Topopah Spring Tuff, and a minimum dip slip rate of 0.075 mm/yr from 12.8 to 10.7 Ma. These data are consistent with the broader structural history of the area near Yucca Mountain. Previous workers used angular unconformities, tilting of structural blocks, and paleomagnetic data to constrain the main period of extensional faulting between 12.7 and 8.5 Ma. Paleoseismic studies in Quaternary deposits documented slip rates on the Solitario Canyon fault from 0.01 to 0.02 mm/yr since 0.077 and 0.20 Ma. The decrease of extensional activity slip rates data on the Solitario Canyon fault provide evidence of decreasing tectonic activity from the middle Miocene to present.

D. Buesch

2006-07-11T23:59:59.000Z

350

Elastic properties of Pu metal and Pu-Ga alloys  

Science Conference Proceedings (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

351

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells  

E-Print Network (OSTI)

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells J. Schörmann,a S and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted wells clear reflection high energy electron diffraction oscillations were observed indicating a two

As, Donat Josef

352

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

353

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN  

E-Print Network (OSTI)

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN Christian in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Detchprohm, Theeradetch

354

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network (OSTI)

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

355

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

be applicable to light sources in fiber-optic communication systems.13 However, there have been no reports intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

356

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells  

Science Conference Proceedings (OSTI)

We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 {mu}m) wavelength range.

Nair, Hari P.; Crook, Adam M.; Bank, Seth R. [Microelectronics Research Center, Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Rd, Austin, Texas 78712 (United States); Yu, Kin M. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2012-01-09T23:59:59.000Z

357

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy  

Science Conference Proceedings (OSTI)

We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.

Smakman, E. P.; Garleff, J. K.; Rambabu, P.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ (Netherlands); Young, R. J.; Hayne, M. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2012-04-02T23:59:59.000Z

358

Paleogene cooling (55-30 MA) as inferred from oxygen isotope variation within mollusc shells  

E-Print Network (OSTI)

Paleogene cooling (c. 50-30 Ma) started sometime in the early-middle Eocene. This was a time when high-latitude and deep-sea temperatures were significantly warmer than today. This cooling culminated during the earliest Oligocene marked by the sudden appearance of a major continental glacier on Antarctica. We examine this cooling trend by analyzing oxygen isotope variation within mollusc shells from the Gulf Coastal Plain of the southern U.S. Our records show a secular cooling trend of mean annual temperature (MAT) in the Mississippi Embayment from an early Eocene tropical climate (26-27 ?C), with a seasonal temperature range (seasonality) of ~6 ?C, to an Oligocene paratropical climate (22-23?C) with an seasonality of ~8 ?C. These temperature records agree well with terrestrial climate proxies. This secular cooling trend, combined with sea-level change, was likely one of the major causes of molluscan turnover in the Mississippi Embayment to cool-tolerant taxa along the Paleogene cooling. Winter temperatures steadily decreased from the middle Eocene to early Oligocene. This contrasts with the sudden winter cooling at Eocene-Oligocene boundary proposed by Ivany et al. (2000). We examined seasonal temperature distribution of the modern marine shelf of the present northern U.S. Gulf Coast. A deeper water temperature model fits well with isotopic temperature profiles derived from fossils shells of the Red Bluff and Yazoo Formations shells, consistent with the paleobathymetry estimates inferred from independent proxies. This reveals that depth effect is one of the major factors controlling seasonality recorded in mollusc shells, resulting in decreasing MAT estimates when temperature stratification exists as in the present ocean. Warm Eocene low-latitude temperatures derived from molluscan oxygen isotope data agree with computer modeling results incorporating higher greenhouse gas concentrations. This supports the contention that the major reason for warm earth climate is elevated concentration of the greenhouse gases, giving a new insight for future climate response to anthropogenic CO? increase.

Kobashi, Takuro

2001-01-01T23:59:59.000Z

359

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

DOE Green Energy (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

360

Dielectrics for GaN based MIS-diodes  

SciTech Connect

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Ren, F.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1998-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells  

E-Print Network (OSTI)

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells H. C. Chui, S. M. Lord report the first observation of intersubband transitions in In,Ga, -#s(y=O.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain

Fejer, Martin M.

362

Atomic hydrogen cleaning of polarized GaAs photocathodes  

DOE Green Energy (OSTI)

Atomic hydrogen cleaning followed by heat cleaning at 450 C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600 C heat cleaning. The low-temperature cleaning technique was successfully applied to thin, strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 seconds was extended by a factor of 100.

Maruyama, Takashi

2003-04-03T23:59:59.000Z

363

U.S. DEPARTMENT OF ENERGY EERE PROJECT MA;"AGEMENT CENTER NEPA DET1!R1.IINATION  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

O". )' O". )' U.S. DEPARTMENT OF ENERGY EERE PROJECT MA;"AGEMENT CENTER NEPA DET1!R1.IINATION RECIPIENT:Resolute Marine Energy, Inc. PROJECT TITLE: Wave-Actuated Power Take Off Device for Electricity Generation Page 1 of2 STATE: MA Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number em Number DE-FOA-OOOO293 DE-EEOOO4565 GFO-OOO4565-001 0 Based on my review orthe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Ordtr451.IA), I have made tbe rollowing determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including , but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply

364

Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-08-01T23:59:59.000Z

365

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra to predict the correct result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-02-01T23:59:59.000Z

366

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer  

Science Conference Proceedings (OSTI)

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-{mu}m-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.

Shen, X. Q.; Takahashi, T.; Kawashima, H.; Ide, T.; Shimizu, M. [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)

2012-07-16T23:59:59.000Z

367

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network (OSTI)

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

368

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

369

Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep...

370

Lattice vibrations of pure and doped GaSe  

Science Conference Proceedings (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

371

Preparation of GaAs photocathodes at low temperature  

SciTech Connect

The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated.

Mulhollan, G.; Clendenin, J.; Tang, H.

1996-10-01T23:59:59.000Z

372

HH5, Antiferromagnetic Interlayer Exchange Couplings in Ga  

Science Conference Proceedings (OSTI)

Author(s), Sun Jae Chung, Sanghoon Lee, Brian J. Kirby, Julie A. Borchers, ... LATE NEWS: KK3, Non-Catalytic Synthesis of GaN Nanostructures at Low...

373

Micro Raman Spectroscopy of Annealed Erbium Implanted GaN  

E-Print Network (OSTI)

Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 510? cm?. The implanted samples were annealed in nitrogen atmosphere ...

Vajpeyi, Agam P.

374

GaAs Films Prepared by RF-Magnetron Sputtering  

DOE Green Energy (OSTI)

The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

2001-08-01T23:59:59.000Z

375

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Equatorial Guinea (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Equatorial Guinea (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

376

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Nigeria (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Nigeria (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

377

Cathodoluminescence Microanalysis of Suspended GaN Nano ...  

Science Conference Proceedings (OSTI)

CL from bulk GaN is dominated by the ~3.4 eV near-band-edge emission. In contrast, the suspended nano-membranes emit a broad defect associated emission...

378

BB2, Novel Cs-Free GaN Photocathodes  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

379

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Trinidad and Tobago (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul...

380

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

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381

Elba Island, GA Liquefied Natural Gas Total Imports (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Total Imports (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5...

382

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN  

Science Conference Proceedings (OSTI)

We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320 K range. We first show that the effective lifetime of QW excitons {tau} increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing {tau} depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs.

Corfdir, P.; Dussaigne, A.; Giraud, E.; Ganiere, J.-D.; Grandjean, N.; Deveaud-Pledran, B. [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Teisseyre, H. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Suski, T.; Grzegory, I. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Lefebvre, P. [Laboratoire Charles Coulomb - UMR5221 - CNRS - Universite Montpellier 2, 34095 Montpellier (France)

2012-02-01T23:59:59.000Z

383

Modeling of InGaSb thermophotovoltaic cells and materials  

DOE Green Energy (OSTI)

A closed form computer program has been developed for the simulation and optimization of In{sub x}Ga{sub 1{minus}x}Sb thermophotovoltaic cells operating at room temperature. The program includes material parameter models of the energy bandgap, optical absorption constant, electron and hole mobility, intrinsic carrier concentration and index of refraction for any composition of GaInSb alloys.

Zierak, M.; Borrego, J.M.; Bhat, I.; Gutmann, R.J. [Rensselaer Polytechnic Inst., Troy, NY (United States); Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

384

SEU design consideration for MESFETs on LT GaAs  

SciTech Connect

Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.

Weatherford, T.R.; Radice, R.; Eskins, D. [Naval Postgraduate School, Monterey, CA (United States)] [and others

1997-12-01T23:59:59.000Z

385

Influence of defect formation as a result of incorporation of a Mn {delta} layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells  

Science Conference Proceedings (OSTI)

The influence of defect formation upon the deposition of a Mn {delta} layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied.

Gorshkov, A. P., E-mail: gorskovap@phys.unn.ru; Karpovich, I. A.; Pavlova, E. D.; Kalenteva, I. L. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

2012-02-15T23:59:59.000Z

386

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures  

E-Print Network (OSTI)

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures, U.S.A. ABSTRACT Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs the device lifetime in a non-destructive mode. INTRODUCTION Group ­ III nitride light emitting diodes (LEDs

Wetzel, Christian M.

387

Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells  

Science Conference Proceedings (OSTI)

Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.

Toropov, A. A., E-mail: toropov@beam.ioffe.ru; Kaibyshev, V. Kh.; Terent'ev, Ya. V.; Ivanov, S. V.; Kop'ev, P. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-02-15T23:59:59.000Z

388

Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs  

SciTech Connect

We form self-assembled GaSb type-II nanorods on a vicinal (111)B GaAs substrate by molecular beam epitaxy and study their optical anisotropy. The GaSb nanorods are elongated and aligned along the [-1 0 1] direction, where the average length, width, and height are about 84, 30, and 2.5 nm. In polarized photoluminescence (PL) measurements, the peak of the GaSb nanorods is observed at about 1.1 eV, where the PL intensity is largest for the [-1 0 1] polarization and smallest for the polarization perpendicular to it. The degree of polarization is more than 20% and depends on the recombination energy. By comparing with a theoretical model based on 4 x 4 Luttinger-Kohn Hamiltonian, we find that the experimental results are explained by considering the Sb/As inter-diffusion and the nanorod height distribution.

Kawazu, Takuya; Noda, Takeshi; Mano, Takaaki; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Akiyama, Yoshihiro [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan); Sakaki, Hiroyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan)

2011-12-05T23:59:59.000Z

389

EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

390

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires  

SciTech Connect

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.

Dobrovolsky, A.; Stehr, J. E.; Chen, S. L.; Chen, W. M.; Buyanova, I. A. [Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden); Kuang, Y. J. [Department of Physics, University of California, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Materials Science and Engineering, La Jolla, California 92093 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093 (United States)

2012-10-15T23:59:59.000Z

391

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

392

JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

393

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network (OSTI)

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

394

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors  

Science Conference Proceedings (OSTI)

Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure

Hung, S.T. [Feng Chia University, Taichung, Taiwan; Chung, Chi-Jung [Feng Chia University, Taichung, Taiwan; Chen, Chin Ching [University of Florida, Gainesville; Lo, C. F. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

395

Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer  

Science Conference Proceedings (OSTI)

The use of low temperature grown GaAs (LT GaAs) buffer layer in GaAs FETs is shown via computer simulation and experimental measurement to reduce ion-induced charge collection by two to three orders of magnitude. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the FETs. Error rate calculations indicate that the soft error rate of LT GaAs integrated circuits will be reduced by several orders of magnitude when compared to conventional FET-based GaAs ICs.

McMorrow, D.; Weatherford, T.R.; Curtice, W.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Tran, L.H.; Campbell, A.B. [Naval Research Lab., Washington, DC (United States)

1995-12-01T23:59:59.000Z

396

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

397

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

398

CC2, Two-Dimensional Electron Gas in In X Al 1-X N/Aln/GaN ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

399

LBNL-4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI  

NLE Websites -- All DOE Office Websites (Extended Search)

4183E-rev1 4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI IA AB BI IL LI IT TY Y I IN N C CA AL LI IF FO OR RN NI IA A: : E EN NV VI IR RO ON NM ME EN NT TA AL L I IM MP PA AC CT TS S A AN ND D D DE EV VI IC CE E P PE ER RF FO OR RM MA AN NC CE E E EX XP PE ER RI IM ME EN NT TA AL L E EV VA AL LU UA AT TI IO ON N O OF F I IN NS ST TA AL LL LE ED D C CO OO OK KI IN NG G E EX XH HA AU US ST T F FA AN N P PE ER RF FO OR RM MA AN NC CE E Brett C. Singer, William W. Delp and Michael G. Apte Indoor Environment Department Atmospheric Sciences Department Environmental Energy Technologies Division July 2011 (Revised February 2012) Disclaimer 1 This document was prepared as an account of work sponsored by the United States Government. While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor The Regents of the University of California, nor any of

400

Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy  

SciTech Connect

We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 Rue des Martyrs, 38054 Grenoble cedex 9 (France); Doisneau, B. [SIMaP, Grenoble INP, Domaine Universitaire, BP 75, 38402 Saint Martin d'Heres (France); Sarigiannidou, E. [LMGP, Grenoble INP, 3 Parvis Louis Neel, BP 257, 38016 Grenoble cedex 1 (France)

2011-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Phonon Knudsen flow in GaAs/AlAs superlattices  

DOE Green Energy (OSTI)

The measured in-plane thermal conductivity, {delta}{sub SL} of GaAs/AlAs superlattices with even moderate layer thicknesses are significantly smaller than the weighted average, {delta}{sub l} = 67 W/Km, of the bulk GaAs and AlAs conductivities. One expects a suppression of the thermal conductivity to that of an actual Al{sub 0.5}Ga{sub 0.5}As alloy when the thickness of the GaAs and AlAs layers approaches that of a single monolayer. However, the observed superlattice thermal conductivity remains suppressed even at layer thickness {approx_gt} 10 nm. The low thermal conductivities, and very high mobilities, make n-doped GaAs/AlAs superlattices attractive possibilities for thermoelectric devices. With Molecular-Beam-Epitaxial grown GaAs/AlAs superlattices one can expect the individual GaAs and AlAs layers to be extremely clean. Defect and/or alloy scattering is limited to be near the heterostructure interfaces. The authors estimate the room-temperature phonon mean-free-path to be 42 (22) nm for the longitudinal (transverse) mode and thus comparable to or smaller than the layer thicknesses. Thus they expect an important phonon scattering at the interfaces. They study this phonon scattering at the superlattice interfaces assuming a Knudsen flow characterized by diffusive scattering. The solid curve in the figure shows the Knudsen-flow theory estimated for the superlattice thermal conductivity which shows a significant reduction when the layer thickness is shorter than the estimated phonon mean free paths.

Hyldgaard, P.; Mahan, G.D. [Oak Ridge National Lab., TN (United States). Solid State Div.]|[Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

1995-09-01T23:59:59.000Z

402

High Voltage GaN Schottky Rectifiers  

SciTech Connect

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25T23:59:59.000Z

403

Final environment impact report supplement: Northeast corridor improvement project electrification: New Haven, CT to Boston, MA. Final report  

SciTech Connect

This document is a supplement to the final environmental impact report (FEIR) published in October 1994 on the proposal by the National Railroad Passenger Corporation (Amtrak) to complete the electrification of the Northeast Corridor main line by extending electrification from New Haven, CT, to Boston, MA. The purpose of this supplement is to provide additional information relative to: the Roxbury Substation Alternative Analysis; an expanded discussion on mitigation of potential adverse impacts; draft Section 61 findings; the Memorandum of Understanding between Amtrak and the Massachusetts Bay Transportation Authority (MBTA) for Route 128 Station; Amtrak`s draft outreach program; and to address other Massachusetts Environmental Policy Act concerns.

NONE

1995-02-01T23:59:59.000Z

404

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

405

Gluonic Higgs Scalar, Abelianization and Monopoles in QCD -- Similarity and Difference between QCD in the MA Gauge and the NAH Theory  

E-Print Network (OSTI)

We study the similarity and the difference between QCD in the maximally abelian (MA) gauge and the nonabelian Higgs (NAH) theory by introducing the ``gluonic Higgs scalar field'' $\\vec \\phi(x)$ corresponding to the ``color-direction'' of the nonabelian gauge connection. The infrared-relevant gluonic mode in QCD can be extracted by the projection along the color-direction $\\vec \\phi(x)$ like the NAH theory. This projection is manifestly gauge-invariant, and is mathematically equivalent to the ordinary MA projection. Since $\\vec \\phi(x)$ obeys the adjoint gauge transformation and is diagonalized in the MA gauge, $\\vec \\phi(x)$ behaves as the Higgs scalar in the NAH theory, and its hedgehog singularity provides the magnetic monopole in the MA gauge like the NAH theory. We observe this direct correspondence between the monopole appearing in the MA gauge and the hedgehog singularity of $\\vec \\phi(x)$ in lattice QCD, when the gluon field is continuous as in the SU($N_c$) Landau gauge. In spite of several similarities, QCD in the MA gauge largely differs from the NAH theory in the two points: one is infrared monopole condensation, and the other is infrared enhancement of the abelian correlation due to monopole condensation.

Hideo Suganuma; Hiroko Ichie

2004-07-07T23:59:59.000Z

406

Nanostructuring of silicon substrates for the site-controlled growth of GaAs/In0.15Ga0.85As/GaAs nanostructures  

Science Conference Proceedings (OSTI)

We report the optimization of electron beam lithography and inductively coupled plasma (ICP) dry etching processes to fabricate pre-patterned Si (100) substrates with sub-100nm holes with controlled size and shape. An efficient in situ cleaning sequence ... Keywords: Electron beam lithography, ICP dry etching, InGaAs quantum dots, MBE growth, Nanostructuring of silicon

Muhammad Usman; Tariq Alzoubi; Mohamed Benyoucef; Johann Peter Reithmaier

2012-09-01T23:59:59.000Z

407

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

408

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network (OSTI)

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

409

High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report the highest mobility values above 2000 cm{sup 2}/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Inagaki, Makoto [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan); Yamaguchi, Masafumi [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan)

2012-11-26T23:59:59.000Z

410

Black-body radiation shift of the Ga$^{+}$ clock transition  

E-Print Network (OSTI)

The blackbody radiation shift of the Ga$^+$ $4s^2 \\ ^1S^e_0 \\to 4s4p \\ ^3P^o_0$ clock transition is computed to be $-$$0.0140 \\pm 0.0048$ Hz at 300 K. The small shift is consistent with the blackbody shifts of the clock transitions of other group III ions which are of a similar size. The polarizabilities of the Ga$^+$ $4s^2 \\ ^1S^e_0$, $4s4p \\ ^3P^o_0$, and $4s4p \\ ^1P^o_1$ states were computed using the configuration interaction method with an underlying semi-empirical core potential. A byproduct of the analysis involved large scale calculations of the low lying spectrum and oscillator strengths of the Ga$^{2+}$ ion.

Cheng, Yongjun

2013-01-01T23:59:59.000Z

411

Aug. 8-9, 2006 HAPL meeting, GA Open Discussion on Advanced Armor  

E-Print Network (OSTI)

Aug. 8-9, 2006 HAPL meeting, GA 1 Open Discussion on Advanced Armor Concepts Moderated by A. René in case the W armor does not work. #12;Aug. 8-9, 2006 HAPL meeting, GA 3 Roman Aquaduct at Pont du Gard, Provence #12;Aug. 8-9, 2006 HAPL meeting, GA 4 Possible Advanced Armor Options Include: · Engineered

Raffray, A. René

412

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua  

E-Print Network (OSTI)

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua Department of Electrical-threshold current injection efficiency of quantum well QW lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW

Gilchrist, James F.

413

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs  

E-Print Network (OSTI)

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

Piner, Edwin L.

414

ANN-based GA for generating the sizing curve of stand-alone photovoltaic systems  

Science Conference Proceedings (OSTI)

Recent advances in artificial intelligence techniques have allowed the application of such technologies in real engineering problems. In this paper, an artificial neural network-based genetic algorithm (ANN-GA) model was developed for generating the ... Keywords: ANN, ANN-GA, GA, Prediction, Sizing curve, Stand-alone PV system

Adel Mellit

2010-05-01T23:59:59.000Z

415

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network (OSTI)

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

416

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network (OSTI)

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

417

Vertically aligned GaN nanotubes - Fabrication and current image analysis  

Science Conference Proceedings (OSTI)

In this work, we present a one step formation method of nanotubes on GaN film, and then map out local current of nanotubes. GaN nanotubes were formed by inductively coupled plasma (ICP) etching and found that tops of these nanotubes were hexagonal with ... Keywords: C-AFM, FESEM, GaN, ICP, Nanotubes

Shang-Chao Hung; Yan-Kuin Su; Shoou-Jinn Chang; Y. H. Chen

2006-11-01T23:59:59.000Z

418

Luminescence Enhancement in InGaN and ZnO by Water Vapor ...  

Science Conference Proceedings (OSTI)

Dependence of Ag/In Ratio of AgInS2 Crystals Grown by Hot-Press Method ... Analysis of Temperature Characteristics of InGaP/InGaAs/Ge Triple-Junction Solar Cell ... Luminescence Enhancement in InGaN and ZnO by Water Vapor Remote...

419

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

420

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Epitaxial EuO thin films on GaAs  

SciTech Connect

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K. [Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States); Mack, S.; Awschalom, D. D. [Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

2010-09-13T23:59:59.000Z

422

AlP/GaP distributed Bragg reflectors  

SciTech Connect

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

423

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

424

Electron Hall Mobility in GaAsBi  

Science Conference Proceedings (OSTI)

We present measurements of the electron Hall mobility in n-type GaAs{sub 1-x}Bi{sub x} epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration ({ge} 1.6%) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.

Kini, R. N.; Bhusal, L.; Ptak, A. J.; France, R.; Mascarenhas, A.

2009-01-01T23:59:59.000Z

425

Analyzing the growth of In{sub x}Ga{sub 1-x}N/GaN superlattices in self-induced GaN nanowires by x-ray diffraction  

Science Conference Proceedings (OSTI)

Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with In{sub x}Ga{sub 1-x}N quantum wells inserted to form an axial superlattice. From the {omega}-2{theta} scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and the In content in this layer. The axial growth rate of the In{sub x}Ga{sub 1-x}N quantum wells is significantly enhanced, which we attribute to increased Ga diffusion along the nanowire sidewalls in the presence of In.

Woelz, M.; Kaganer, V. M.; Brandt, O.; Geelhaar, L.; Riechert, H.

2011-06-27T23:59:59.000Z

426

Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs: Preprint  

Science Conference Proceedings (OSTI)

This conference paper describes the deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semiconductor InGaAsN. A series of as-grown, metal-organic chemical vapor deposited samples having varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additional defects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.

Johnston, S. W.; Ahrenkiel, R. K.; Friedman, D. J.; Kurtz, S. R.

2002-05-01T23:59:59.000Z

427

Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets  

Science Conference Proceedings (OSTI)

Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

Chu, Kuei-Yi [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China); Chiang, Meng-Hsueh, E-mail: mhchiang@niu.edu.tw; Cheng, Shiou-Ying, E-mail: sycheng@niu.edu.tw [National II an University, Department of Electronic Engineering (China); Liu, Wen-Chau [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China)

2012-02-15T23:59:59.000Z

428

u.s. DEP.-illThIl!NT OF ENERGY EERE PROJECT MA"IAGEMENT CENTER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

illThIl!NT OF ENERGY illThIl!NT OF ENERGY EERE PROJECT MA"IAGEMENT CENTER NEPA DE:rJ!IU...lINATION RECIPIENT:TX STATE ENERGY CONSERVATION OFFICE PROJECT TITLE: SHARYLAND ISD Page 1 of2 STATE: TX Funding Opportunity Announcement Number Procurement Instmment Number NEPA Control Number CIO Number DE-EEOOO116 DE-EEOOO116 GFO-OOO0116-032 GOO Based OD my review of the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the following determination : ex, EA, EIS APPENDIX AND NUMBER: Description: 85.16 Solar photovoltaic systems The installation, modification. operation, and removal of commercially avaUable solar photovoltaic systems located on a building or other structure (such as rooftop, par1o:.ing lot or facility, and mounted to signage, lighting, gates, or fences), or if

429

U.S. DFPAR.Tl\IFNT OF ENERGY EERE PROJECT MA:'\1AGE\1ENTCEN rER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Tl\IFNT OF ENERGY Tl\IFNT OF ENERGY EERE PROJECT MA:'\1AGE\1ENTCEN rER NEPA DETFRl\.ITNATION Page 1 of2 RECIPIENT:Southwest Research Institute STATE: TX PROJECT TITLE : Optimizing the CSP Tower Air Brayton Cycle System to meet the SunShot Objectives Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA-0000595 DE-EE0005805 GF0-0005805-001 Based on my review oftbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made tbe foUowing determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering, analysis, and dissemination Information gathering (including, but not limited to, literature surveys, inventories, site visits, and

431

U.S. DEPAR.Th:IENT OF ENERGY EERE PROJECT MA1\JAGEME~T CE~TER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Th:IENT OF ENERGY Th:IENT OF ENERGY EERE PROJECT MA1\JAGEME~T CE~TER NEPA DETEin:ITNATION Page 1 of2 RECIPIENT:City of Henderson; Henderson; NV STATE: NV PROJECT TITLE : Henderson Solar Energy Project Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-EE0003166 GF0-0003166-003 G03166 Based on my review ofthe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: 85.16 Solar photovoltaic systems The installation, modification, operation, and removal of commercially available solar photovoltaic systems located on a building or other structure (such as rooftop, parking lot or facility, and mounted to s1gnage,

432

U.S. DEPARTI\t.IENT OF ENERGY EERE PROJECT MA.J'\JAGE\ofENT CENTER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

t.IENT OF ENERGY t.IENT OF ENERGY EERE PROJECT MA.J'\JAGE\ofENT CENTER NEPA DETERMINATION Page 1 of2 RECIPIENT:San Diego State University STATE: CA PROJECT TITLE: A Small Particle Solar Receiver for High Temperature Brayton Power Cycles Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CIO Number DE-SOL-0000595 DE-EE0005800 GF0-0005800-001 G05800 Based on my review oftbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the foUowing determination: CX, EA, EIS APPENDIX AND NUMBER: Description: 83.6 Small-scale research and development. laboratory operations, and pilot projects Rational for determination: Siting, construction, modification, operation, and decommissioning of facilities for smallscale research

433

U.S. DEP.-illTUENT OF ENERGY EERE PROJECT MA"AG EM ENT CEN T  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

illTUENT OF ENERGY illTUENT OF ENERGY EERE PROJECT MA"AG EM ENT CEN T ER NEPA DETERl\IINATION RECIPIENT:City of San Antonio PROJECT TITLE: City of San Antonio ARRA·EECBG * Activity #7 (S) Page 1 of2 STATE: TX Funding Opportunity Announcement Number 81.128 Procurement Instrument Number DE·EEOOOO970 NEPA Control Number cm Number o Based on my review ofthe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 45 I. IA), I have made the followin g determination: CX, EA , EIS APPENDIX AND NUMBER: Description: 85.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical

434

Ultra High p-doping Material Research for GaN Based Light Emitters  

Science Conference Proceedings (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

435

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1993-01-01T23:59:59.000Z

436

AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability  

Science Conference Proceedings (OSTI)

Keywords: AlGaAsSb, Hall elements, InAs, Sb, buffer/barriers, deep quantum well, field effect transistors, reliability

S. Miya; S. Muramatsu; N. Kuze; K. Nagase; T. Iwabuchi; A. Ichii; M. Ozaki; I. Shibasaki

1996-03-01T23:59:59.000Z

437

Characterization and device performance of (AgCu)(InGa)Se2 absorber layers  

DOE Green Energy (OSTI)

The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

2009-06-08T23:59:59.000Z

438

Using GA-ANN algorithm to predicate coal bump energy  

Science Conference Proceedings (OSTI)

A GA-ANN network was constructed for preidcating coal bump energy, based on the 300 training samples form simulated results with PFC2D software for different coal particle stiffness. It was tested that the average relative error of fitted-output value ... Keywords: artificial neural network, coal bump, energy, genetic algorithm, predication

Yunliang Tan; Tongbin Zhao; Zhigang Zhao

2009-06-01T23:59:59.000Z

439

Development of ZnO:Ga as an Ultrafast Scintillator  

DOE Green Energy (OSTI)

We report on several methods for synthesizing the ultra-fast scintillator ZnO(Ga), and measurements of the resulting products. This material has characteristics that make it an excellent alpha detector for tagging the time and direction of individual neutrons produced by t-d and d-d neutron generators (associated particle imaging). The intensity and decay time are strongly dependent on the method used for dopant incorporation. We compare samples made by diffusion of Ga metal to samples made by solid state reaction between ZnO and Ga2O3 followed by reduction in hydrogen. The latter is much more successful and has a pure, strong near-band-edge fluorescence and an ultra-fast decay time of the x-ray-excited luminescence. The luminescence increases dramatically as the temperature is reduced to 10K. We also present results of an alternate low-temperature synthesis that produces luminescent particles with a more uniform size distribution. We examine possible mechanisms for the bright near-band-edge scintillation and favor the explanation that it is due to the recombination of Ga3+ donor electrons with ionization holes trapped on H+ ion acceptors.

Bourret-Courchesne, E.D.; Derenzo, S.E.; Weber, M.J.

2008-12-10T23:59:59.000Z

440

Properties of H, O and C in GaN  

DOE Green Energy (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Optimization on Seawater Desulfurization Efficiency Based on LSSVM-GA  

Science Conference Proceedings (OSTI)

Seawater flue gas Desulfurization (SFGD) was adopted in many coal-fired power plants of littoral for its low cost and high desulfurization efficiency. Operating Parameters would seriously affect SFGD efficiency, the desulfurization efficiency can be ... Keywords: SFGD, desulfurization efficiency, LSSVM, GA, optimization

Liu Ding-ping; Li Xiao-wei

2010-10-01T23:59:59.000Z

442

Low cost high power GaSB photovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a thermophotovoltaics (TPV) system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; She Hui; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

443

Low cost high power GaSb thermophotovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a TPV system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

444

Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers  

DOE Green Energy (OSTI)

(Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (?h?)2 vs. h?, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

Boyle, Jonathan; Hanket, Gregory; Shafarman, William

2009-06-09T23:59:59.000Z

445

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

446

Rig 'dzin Tshe dbang mchog grub (1761-1829) et la constitution du rNying ma rgyud 'bum de sDe dge  

E-Print Network (OSTI)

les textes en une collection Ug palung, le fief de la ligne Zur3. Un article plus rcent encore de Mi Nyag Thubbstan chos dar fait le point sur les diverses versions existantes, mentionnantdailleurs un certain nombre dentre elles qui ne sont... and the Bai-ro- rgyud-bum, p. 9. 4 Mi nyag Thub bstan chos dar, rNying ma rgyud 'bum gyi mtshams sbyor, passim. 5 Voir Achard, La liste des Tantras du rNying mai rgyud bum selon ldition tablie par Kun mkhyen Jigs med gling pa, Revue d...

Achard, Jean-Luc

2003-01-01T23:59:59.000Z

447

Wa s h i n g t o n Ma r r i o t t e n Me t r o C e...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Wa s h i n g t o n Ma r r i o t t e n Me t r o C e n t e r F a c u l t a d d e D e r e c h o d e l a U n i v e r s i d a d d e H o w a r d C o n f e r e n c i a y P r o g r a ma d...

448

Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices  

Science Conference Proceedings (OSTI)

Reverse-bias stress testing has been applied to a large set of more than 50 AlGaN/GaN high electron mobility transistors, which were fabricated using the same process but with different values of the AlN mole fraction and the AlGaN barrier-layer thickness, as well as different substrates (SiC and sapphire). Two sets of devices having different defect types and densities, related to the different growth conditions and the choice of nucleation layer, were also compared. When subjected to gate drain (or gate-to-drain and source short-circuited) reverse-bias testing, all devices presented the same time-dependent failure mode, consisting of a significant increase in the gate leakage current. This failure mechanism occurred abruptly during step-stress experiments when a certain negative gate voltage, or critical voltage, was exceeded or, during constant voltage tests, at a certain time, defined as time to breakdown. Electroluminescence (EL) microscopy was systematically used to identify localized damaged areas that induced an increase of gate reverse current. This current increase was correlated with the increase of EL intensity, and significant EL emission during tests occurred only when the critical voltage was exceeded. Focused-ion-beam milling produced cross-sectional samples suitable for electron microscopy observation at the sites of failure points previously identified by EL microscopy. In highdefectivity devices, V-defects were identified that were associated with initially high gate leakage current and corresponding to EL spots already present in untreated devices. Conversely, identification of defects induced by reverse-bias testing proved to be extremely difficult, and only nanometer-size cracks or defect chains, extending vertically from the gate edges through the AlGaN/GaN heterojunction, were found. No signs of metal/semiconductor interdiffusion or extended defective areas were visible.

Cullen, David A [ORNL; Smith, David J [Arizona State University; Passaseo, Adriana [Consiglio Nazionale delle Ricerche; Tasco, Vittorianna [Consiglio Nazionale delle Ricerche; Stocco, Antonio [Universita di Padova; Meneghini, Matteo [Universita di Padova; Meneghesso, Gaudenzio [Universita di Padova; Zanoni, Enrico [Universita di Padova

2013-01-01T23:59:59.000Z

449

GaSb substrates with extended IR wavelength for advanced space based applications  

SciTech Connect

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

2009-05-01T23:59:59.000Z

450

Two-color picosecond experiments on anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells  

E-Print Network (OSTI)

quantum wells S. C. Hohng and D. S. Kima) Department of Physics and Condensed Matter Research Institute in GaAs/AlGaAs asymmetric double quantum wells. Direct evidence for forbidden absorption is shown heterojunctions and asymmetric double quan- tum wells was found and its origin is still being hotly de- bated

Hohng, Sung Chul

451

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Conference Proceedings (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung, Keun Man Song, Young Su Choi, Hyeong-Ho Park, Hyun-Beom Shin, Ho Kwan Kang, Jaejin Lee

2013-01-01T23:59:59.000Z

452

Optically pumped InxGa???xN/InyGa???yN multiple quantum well vertical cavity surface emitting laser operating at room temperature.  

E-Print Network (OSTI)

Room temperature vertical cavity lasing at the wavelength of 433nm has been successfully realized in InxGa???xN/InyGa???yN multiple quantum well without Bragg mirrors under photo-excitation. At high excitation intensity, ...

Chen, Zhen

453

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth  

Science Conference Proceedings (OSTI)

Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f{sub t} and f{sub max} in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 OMEGA mum to a GaN 2DEG.

Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K. [Department of ECE, University of California, Santa Barbara, California 93106 (United States) and Department of Materials, University of California, Santa Barbara, California 93106 (United States)

2010-04-05T23:59:59.000Z

454

Final environmental impact statement/report. Volume 4. Comment letters and public hearing transcripts. Northeast corridor improvement project electrication: New Haven, CT to Boston, MA  

Science Conference Proceedings (OSTI)

This document is the final environmental impact statement and final environmental impact report (FEIS/R) on the proposal by the National Railroad Passenger Corporation (Amtrak) to complete the electrification of the Northeast Corridor main line by extending electric traction from New Haven, CT, to Boston, MA. This document (Volume IV) reprints the comments received on the DEIS/R.

NONE

1994-10-01T23:59:59.000Z

455

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

456

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure  

SciTech Connect

High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In{sub x}Ga{sub 1-x}N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and In{sub x}Ga{sub 1-x}N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the In{sub x}Ga{sub 1-x}N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

Strelchuk, V. V., E-mail: Strelch@isp.kiev.ua; Kladko, V. P.; Avramenko, E. A.; Kolomys, O. F.; Safryuk, N. V.; Konakova, R. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Yavich, B. S., E-mail: byavich@soptel.ru [ZAO Svetlana-Optoelectronics (Russian Federation); Valakh, M. Ya.; Machulin, V. F.; Belyaev, A. E. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2010-09-15T23:59:59.000Z

457

MaSST 2012  

Science Conference Proceedings (OSTI)

... How does the nondeterminism of scheduling ... memory use, parallelism, virtual machines, and cloud ... Jeehyun Hwang, North Carolina State University. ...

2013-05-22T23:59:59.000Z

458

Dynamic Model of Hydrogen in GaN  

NLE Websites -- All DOE Office Websites (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

459

GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

1999-03-02T23:59:59.000Z

460

Method of plasma etching GA-based compound semiconductors  

DOE Patents (OSTI)

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Qiu, Weibin; Goddard, Lynford L.

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Method of plasma etching Ga-based compound semiconductors  

SciTech Connect

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Qiu, Weibin; Goddard, Lynford L.

2012-12-25T23:59:59.000Z

462

A GaAs transceiver chip for optical data transmission  

SciTech Connect

The present article describes a transceiver VLSI chip for optical data transmission, at 1 Gbit/s (1.4 Gbit/s in selected production), made in GaAs technology. The transceiver makes the parallel-to-serial and serial-to-parallel conversion as well as the encoding and decoding of 32 bit data words. The circuit operates in a completely asynchronous mode, allowing the possibility of switching on-off the transmission in few nsec and of using the transceiver not only in point-to-point topologies, but also in flooding topologies (i.e. star connections). The radiation hardness and the relatively low power consumption, respect to TTL, of the GaAs, extend the use of the chip to a large number of applications in present and future high energy physics experimental apparatus.

Mirabelli, G.; Petrolo, E.; Valente, E. (Ist. Nazionale di Fisica Nucleare, Roma (Italy)); Cardarelli, R.; Santonico, R. (Sezione di Roma 2 and Univ. di Roma (Italy). Ist. Nazionale di Fisica Nucleare); Ferrer, M.L. (Lab. Nazionali di Frascati (Italy). Ist. Nazionale di Fisica Nucleare)

1993-08-01T23:59:59.000Z

463

AlGaAs diode pumped tunable chromium lasers  

DOE Patents (OSTI)

An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

Krupke, William F. (Pleasanton, CA); Payne, Stephen A. (Castro Valley, CA)

1992-01-01T23:59:59.000Z

464

CsBr/GaN Heterojunction Photoelectron Source  

Science Conference Proceedings (OSTI)

Experimental results on a new CsBr/GaN heterojunction photocathode structure are presented. The results indicate a fourfold improvement in photoyield relative to CsBr/Cr photocathodes. A model is presented based on intraband states in CsBr and electron injection from the GaN (with 1% addition of indium) substrate to explain the observed photoyield enhancement. The photocathode lifetime at high current density (>40 A/cm{sup 2}) is limited by laser heating of the small illuminated area. Calculations are presented for sapphire and diamond substrates, indicating a factor of 20 reduction in temperature for the latter. The results are encouraging for the realization of a high photoyield photocathode operating at high current density with long lifetime.

Maldonado, J.R.; /Stanford U., Elect. Eng. Dept.; Liu, Z.; Sun, Y.; /SLAC, SSRL; Schuetter, S.; /Wisconsin U., Madison; Pianetta, P.; /SLAC, SSRL; Pease, R.F.W.; /Stanford U., Elect. Eng. Dept.

2009-04-30T23:59:59.000Z

465

Low energy electron beam induced vacancy activation in GaN  

Science Conference Proceedings (OSTI)

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5-20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive V{sub Ga}-H{sub n} complexes that can be activated by H removal during low energy electron irradiation.

Nykaenen, H.; Suihkonen, S.; Sopanen, M. [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland); Kilanski, L. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland); Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/56, 02-668 Warsaw (Poland); Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland)

2012-03-19T23:59:59.000Z

466

Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology  

DOE Green Energy (OSTI)

This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

Vernon, S.M. (Spire Corp., Bedford, MA (United States))

1993-04-01T23:59:59.000Z

467

Desferal (DFO) induced Ga-67 washout from normal tissue, tumor and abscess in experimental animals  

Science Conference Proceedings (OSTI)

In the experimental animal, desferal (DFO) given intravenously washes out Ga-67 from all tissues. This effect is not uniform: blood activity is reduced very markedly, while liver activity is less affected. Maximal effect of DFO occurs if given close to the Ga-67 injection. When the time interval between the two is increased, the absolute amount of Ga-67 excreted in the urine in excess of the spontaneous excretion is reduced. Administration of DFO does not effect Ga-67 gastrointestinal excretion. In three animal tumor models (EMT-6 sarcoma in Balb/c mice, spontaneous adenocarcinoma in mice, and spontaneous adenocarcinoma in the rabbit) and in sterile abscess-bearing rats, the administration of DFO 24 hrs after Ga-67-citrate improves significantly the target-to-nontarget ratio. Animals given 50 mg/kg DFO I.V. after Ga-67 citrate showed a significant reduction in the whole-body activity as seen in a one-week follow up.

Oster, Z.H.; Som, P.; Atkins, H.L.; Brill, A.B.

1980-01-01T23:59:59.000Z

468

UV-Photoassisted Etching of GaN in KOH  

SciTech Connect

The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n - 3x 10^12Gcm-3) GaN are 2 1000 .min-l. The etching is diffusion limited under our conditions with an activation energy of - 0.8kCal.mol-1. The etched surfaces are rough, but retain their stoichiometry. PEC etching is found to selectively reveal grain boundaries in GaN under low light illumination conditions. At high lamp powers the rates increase with sample temperature and the application of bias to the PEC cell, while they go through a maximum with KOH solution molarity. The etching is diffusion-limited, producing rough surface morphologies that are suitable in a limited number of device fabrication steps. The surfaces however appear to remain relatively close to their stoichiometric composition.

Abernathy, C.R.; Auh, K.H.; Cho, H.; Donovan, S.M.; Han, J.; Lambers, E.S.; Pearton, S.J.; Ren F.; Shul, R.J.

1998-11-12T23:59:59.000Z

469

Comparative study of GaN growth process by MOVPE  

SciTech Connect

A comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. The study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

Sun, J.; Redwing, J.M.; Kuech, T.F.

1999-07-01T23:59:59.000Z

470

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network (OSTI)

We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k center dot p model for hole states, we evaluate the zero-temperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum fluctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of (Ga,Mn)As semiconductors with nominal Mn doping ranging from similar to 2 to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality (Ga,Mn)As materials have nearly parallel ground state alignment.

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

471

Substrate misorientation effects on epitaxial GaInAsSb  

DOE Green Energy (OSTI)

The effect of substrate misorientation on the growth of GaInAsSb was studied for epilayers grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy. The substrates were (100) misoriented 2 or 6{degree} toward (110), (111)A, or (111)B. The surface is mirror-like and featureless for layers grown with a 6{degree} toward (111)B misorientation, while, a slight texture was observed for layers grown on all other misorientations. The optical quality of layers, as determined by the full width at half-maximum of photoluminescence spectra measured at 4K, is significantly better for layers grown on substrates with a 6{degree} toward (111)B misorientation. The incorporation of Zn as a p-type dopant in GaInAsSb is about 1.5 times more efficient on substrates with 6{degree} toward (111)B misorientation compared to 2{degree} toward (110) misorientation. The external quantum efficiency of thermophotovoltaic devices is not, however, significantly affected by substrate misorientation.

Wang, C.A.; Choi, H.K.; Oakley, D.C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1997-12-01T23:59:59.000Z

472

Subpicosecond spin relaxation in GaAsSb multiple quantum wells K. C. Hall,a)  

E-Print Network (OSTI)

Subpicosecond spin relaxation in GaAsSb multiple quantum wells K. C. Hall,a) S. W. Leonard, and H quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 m, 100 fs pulses times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation

Van Driel, Henry M.

473

Quaternary Bismide Alloy ByGa1-yAs1-xBix Lattice Matched to GaAs  

DOE Green Energy (OSTI)

We report on the lattice matched quaternary alloy, B{sub y}Ga{sub 1-y}As{sub 1-x}Bi{sub x} grown by molecular beam epitaxy at conditions conducive to bismuth incorporation. Incorporating a smaller atom (boron) along with the larger atom (bismuth) allows for a reduction of the epi-layer strain and lattice matching to GaAs for compositions of Bi:B{approx_equal}1.3:1. The addition of boron flux does not significantly affect the bismuth incorporation and no change in the band gap energy is observed with increasing boron content. However, excess, non-substitutional boron is incorporated which leads to an increase in hole density, as well as an increase in the density of shallow in-gap states as observed by the loss of localization of photo-excited excitons.

Deaton, D. A.; Ptak, A. J.; Alberi, K.; Mascarenhas, A.

2012-07-15T23:59:59.000Z

474

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation dose on dc characteristics and the reliability of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2 1014 cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility and sheet carrier concentration at doses below 2 1013 cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 1014 cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvement of device reliability was attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

Liu, L. [University of Florida, Gainesville; Cuervo, C.V. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

475

Harmonic Responses in 2DEG AlGaAs/GaAs HEMT Devices Due to Plasma Wave Interaction  

Science Conference Proceedings (OSTI)

Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, omega{sub p}, lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short-channel High-Electron-Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.

Hashim, A. M.; Alias, Q. I. [Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Kasai, S.; Hasegawa, H. [Research Center for Integrated Quantum Electronics, Hokkaido University North 12 West 8, Sapporo 060-8628 (Japan)

2010-03-11T23:59:59.000Z

476

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas  

SciTech Connect

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2 Multiplication-Sign 10{sup 11} cm{sup -2}) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

Mak, W. Y.; Sfigakis, F.; Beere, H. E.; Farrer, I.; Griffiths, J. P.; Jones, G. A. C.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom)] [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Das Gupta, K. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom) [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Klochan, O.; Hamilton, A. R. [School of Physics, University of New South Wales, Sydney (Australia)] [School of Physics, University of New South Wales, Sydney (Australia)

2013-03-11T23:59:59.000Z

477

Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels  

SciTech Connect

This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

2006-01-01T23:59:59.000Z

478

Reliability of GaN HEMTs: Electrical and Radiation-induced Failure ...  

Science Conference Proceedings (OSTI)

Symposium, Advanced Materials for Power Electronics, Power Conditioning, and Power Conversion II. Presentation Title, Reliability of GaN HEMTs: Electrical...

479

M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers  

Science Conference Proceedings (OSTI)

On-axis reciprocal space mapping of the graded AlGaN showed tilt at each interface associated ..... New Concepts and Materials for Solar Power Conversion

480

Solidification and Microstructure Evaluation of the Ni-Ga and Co-Ni ...  

Science Conference Proceedings (OSTI)

Ni-Ga binary system is thus one of the basic binary system which forms the dominated ? ... The Effects of Natural and Marangoni Convection on the Resultant...

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