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1

Price of Everett, MA Natural Gas LNG Imports from Egypt (Nominal...  

Gasoline and Diesel Fuel Update (EIA)

Egypt (Nominal Dollars per Thousand Cubic Feet) Price of Everett, MA Natural Gas LNG Imports from Egypt (Nominal Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

2

Price of Everett, MA Natural Gas LNG Imports from Algeria (Dollars...  

Gasoline and Diesel Fuel Update (EIA)

Algeria (Dollars per Thousand Cubic Feet) Price of Everett, MA Natural Gas LNG Imports from Algeria (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4...

3

Everett, MA Natural Gas Liquefied Natural Gas Imports from Trinidad and  

Gasoline and Diesel Fuel Update (EIA)

Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Everett, MA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 10,240 11,488 7,086 8,271 8,126 8,150 7,731 7,870 5,199 5,520 9,264 4,691 2012 9,482 8,458 7,661 1,447 4,940 5,465 6,646 10,377 5,634 4,748 2,553 2,581 2013 5,126 5,003 4,629 5,171 5,626 5,173 8,023 5,961 2,995 2,674 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 1/7/2014 Next Release Date: 1/31/2014 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Everett, MA LNG Imports from Trinidad/Tobago

4

MA.+'  

Office of Legacy Management (LM)

MA.+' MA.+' t -@ . ;' OAK RIDGE NATIONAL LABORATORY i OPtRATED BY MARTIN MARIETTA ENERGY SYSTEMS, INC. FOR THE UNITE0 STATES DEPARTMENT OF ENERGY ,,y , - IhI of ORNL/TM-10053 RESULTS OF THE RADIOLOGICAL SURVEY AT THE VENTRON SITE, BEVERLY, MASSACHUSETTS W. D. Cottrell R. F. Carrier -.- _ ..-. - . . . -~~.- ~~- Printed in the United States of America. Available from National Technical Information Service U.S. Department of Commerce 5285 Port Royal Road, Springfield, Virginia 22161 NTIS price codes-Printed Copy: ~06 Microfiche A01 This report was prepared as an account of work sponsored by an agency of the United StatesGovernment. Neither the U nited StatesGovernment nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or

5

Everett, Washington: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Everett, Washington: Energy Resources Everett, Washington: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 47.9789848°, -122.2020794° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":47.9789848,"lon":-122.2020794,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

6

ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY M.A. Contreras, 2  

E-Print Network [OSTI]

) photovoltaic technology is motivated primarily by the potential to enhance solar cell current generationZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY 1 M.A. Contreras, 2 T. Nakada, 2 M of 18.6% for Cu(In,Ga)Se2 solar cells that incorporate a ZnS(O,OH) buffer layer as an alternative to Cd

Sites, James R.

7

Phenomenology of "dark matter"- from the Everett's quantum cosmology  

E-Print Network [OSTI]

It is widely accepted that the Everett's (or "many-worlds") interpretation of quantum mechanics is the only one which is appropriate for quantum cosmology because no environment may exist for Universe as a whole. We discuss, in the framework of the Everett's interpretation, the (quasi-) classical stage of evolution of the Universe when there coexist "classically incompatible" configurations of matter, or classical alternative realities ("alternatives" for short). In the framework of the Everett's interpretation the semiclassical gravity (where the gravitational field is classical and the non-gravitational fields are quantum) is more natural than theories including quantizing gravitational field. It is shown that the semiclassical (at least on the astrophysical and cosmological scales) Everett-type gravity leads to the observational effect known as the effect of dark matter. Instead of assuming special forms of matter (weakly interacting with the known matter), the role of the dark matter is played in this case by the matter of the usual kind which however belongs to those alternative realities (Everett's worlds) which remain {\\guillemotleft}invisible{\\guillemotright}, i.e. not perceived with the help of non-gravitational fields.

M. B. Mensky

2011-05-21T23:59:59.000Z

8

The Everett-Wheeler interpretation and the open future  

SciTech Connect (OSTI)

I discuss the meaning of probability in the Everett-Wheeler interpretation of quantum mechanics, together with the problem of defining histories. To resolve these, I propose an understanding of probability arising from a form of temporal logic: the probability of a future-tense proposition is identified with its truth value in a many-valued and context-dependent logic. In short, probability is degree of truth. These ideas relate to traditional naive ideas of time and chance. Indeed, I argue that Everettian quantum mechanics is the only form of scientific theory that truly incorporates the perception that the future is open.

Sudbery, Anthony [Department of Mathematics, University of York, Heslington, York, YO10 5DD (United Kingdom)

2011-03-28T23:59:59.000Z

9

MA 22100  

E-Print Network [OSTI]

MA 22100 002 - UNIV 017 MWF 08:30am - Smith, Gabriel (MATH 741); MA 22100 003 - UNIV 017 MWF 09:30am - Naughton, Dominic (MATH 848); MA 22100...

10

MA 16100  

E-Print Network [OSTI]

MA 16100, Fall 2014. Plane Analytic Geometry And Calculus I. Course Info. Syllabus Emergency Preparedness Syllabus Attachment Course Calendar...

11

Metal-insulator-semiconductor structure on low-temperature grown GaAs M. Young, W. Li, and T. P. Ma  

E-Print Network [OSTI]

Metal-insulator-semiconductor structure on low-temperature grown GaAs A. Chen,a M. Young, W. Li Received 28 July 2006; accepted 30 October 2006; published online 7 December 2006 The metal-insulator dielectrics and metal-insulator-semiconductor MIS structures; for ex- ample, in situ deposited Ga2O3 Gd2O3

Woodall, Jerry M.

12

Everettian Rationality: defending Deutsch's approach to probability in the Everett interpretation  

E-Print Network [OSTI]

An analysis is made of Deutsch's recent claim to have derived the Born rule from decision-theoretic assumptions. It is argued that Deutsch's proof must be understood in the explicit context of the Everett interpretation, and that in this context, it essentially succeeds. Some comments are made about the criticism of Deutsch's proof by Barnum, Caves, Finkelstein, Fuchs, and Schack; it is argued that the flaw which they point out in the proof does not apply if the Everett interpretation is assumed. A longer version of this paper, entitled "Quantum Probability and Decision Theory, Revisted", is also available online.

David Wallace

2003-03-10T23:59:59.000Z

13

MA 26100  

E-Print Network [OSTI]

Differential calculus of several variables; multiple integrals. Introduction to vector calculus. Not open to students with credit in MA 174 or 271. Typically offered...

14

MA 221  

E-Print Network [OSTI]

MA 22100-22200 is a two-semester sequence in the technique of calculus for students enrolled in certain technical curricula. Not available for credit toward...

15

MA 222  

E-Print Network [OSTI]

MA 222, Spring 2008. Calculus For Technology II ... Contact the Webmaster for technical and content concerns about this webpage. Copyright 2010, Purdue...

16

MA 30300  

E-Print Network [OSTI]

Course Description. Credit Hours: 3.00. This is a methods course for juniors in any branch of engineering and science, designed to follow MA 262.

17

A NEW ROBOT DESIGN TO PASSIVELY DAMP FLEXIBLE ROBOTIC ARMS Louis J. Everett  

E-Print Network [OSTI]

A NEW ROBOT DESIGN TO PASSIVELY DAMP FLEXIBLE ROBOTIC ARMS Louis J. Everett Mechanical robotic arm in which passive dampers eliminate unwanted oscillation. This paper derives and reduces, Modeling, Space Robotics 1. INTRODUCTION Long reach robot arms are being designed and implemented in space

Everett, Louis J.

18

MA.2  

Office of Legacy Management (LM)

IS .:,I. ;' IS .:,I. ;' MA.2 0 y-AU Mr. M ichael Matt W a tertown Redevelopment Authority 319 Arlington Street W a tertown, Massachusetts 02172 Dear Mr. Matt: The Department of Energy is evaluating the radiological condition of sites that were utilized under the Manhattan Engineer District and/or the Atomic Energy C o m m ission in the early years of nuclear energy development to determine whether they need remedial action and whether the Department has authority to perform such action. As you know from information previously sent to you, portions of the W a tertown Arsenal in W a tertown, Massachusetts, were identified as possible sites. The areas investigated included those areas which were the sites of Buildings 34, 41, and 421 and the GSA site. The enclosed documents, which represent the Department's review of the

19

MaRIE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Materials Science MaRIE aboutassetsimagesicon-faces.jpg MaRIE MaRIE is the experimental facility needed to control the time-dependent properties of materials for national...

20

U.S. LNG Imports from Algeria  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

U.S. LNG Imports from Other Countries  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

22

U.S. LNG Imports from Egypt  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

23

U.S. LNG Imports from Equatorial Guinea  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

24

U.S. LNG Imports from Norway  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

25

U.S. LNG Imports from Indonesia  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

26

U.S. LNG Imports from Trinidad/Tobago  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

27

U.S. LNG Imports from Yemen  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

28

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

29

U.S. LNG Imports from Brunei  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

30

U.S. LNG Imports from Nigeria  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

31

U.S. LNG Imports from Oman  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

32

U.S. LNG Imports from Peru  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

33

U.S. LNG Imports from Malaysia  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

34

U.S. LNG Imports from Qatar  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

35

U.S. LNG Imports from Equatorial Guinea  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

36

U.S. LNG Imports from Other Countries  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

37

U.S. LNG Imports from Norway  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

38

DOE - Office of Legacy Management -- Beverly MA Site - MA 04  

Office of Legacy Management (LM)

Beverly MA Site - MA 04 Beverly MA Site - MA 04 FUSRAP Considered Sites Beverly, MA Alternate Name(s): Metal Hydrides, Inc. Ventron Corporation MA.04-1 Location: Congress Street, Beverly, Massachusetts MA.04-4 Historical Operations: Provided uranium metal production under contract with MED. Thorium and radium contamination occurred from non-MED operations. MA.04-6 Eligibility Determination: Eligible MA.04-1 Radiological Survey(s): Assessment Survey, Verification Survey MA.04-4 MA.04-7 Site Status: Certified- Certification Basis, Federal Register Notice included MA.04-5 MA.04-6 MA.04-7 Long-term Care Requirements: Long-Term Surveillance and Maintenance Requirements for Remediated FUSRAP Sites S07566_FUSRAP Also see Beverly, MA, Site Documents Related to Beverly, MA Beverly Site Aerial Photograph

39

MA 16020 -- CALCULATOR POLICY  

E-Print Network [OSTI]

MA 16020 -- CALCULATOR POLICY. A ONE-LINE scientific calculator is REQUIRED. No other calculator is allowed. RECOMMENDED: TI-30Xa calculator

OwenDavis

2014-08-20T23:59:59.000Z

40

Defect ordering in epitaxial a-GaN(QQ01) H. Z. Xiao, N.-E. Lee, R. C. Powell,") Z. Ma, L. J. Chou,b) L. H. Allen, J. E. Greene,  

E-Print Network [OSTI]

epitaxial wurtzite-structure o-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted, including gas-source molecular-beam epitaxy (GSMBE),' reactive-ion MBE (RIMBE), plasma- assisted MBE (PAMBE- purity (99.9995%) NH3 flux, regulated with a mass-flow con- `kurrent address: Solar Cells Inc., 1702 N

Allen, Leslie H.

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

MaRIE Presentations  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

certifiable, flexible, and low-cost product-based solutions to many materials problems. MaRIE 1.0 Matter Radiation Interactions in Extremes 1.0 70th Anniversary (pdf) July 27, 2013...

42

Ookie Ma | Department of Energy  

Energy Savers [EERE]

Ookie Ma About Us Ookie Ma - Policy and Analysis, Portfolio Manager, Office of Energy Efficiency and Renewable Energy Most Recent Fun Fact Friday: Geeking Out on Energy Data...

43

MA 152 Exam 1 Memo  

E-Print Network [OSTI]

that evening on the MA 15910 web page (www.math.purdue.edu/MA15910). 3) The exam is self-explanatory. No questions will be allowed unless a student...

math

2015-01-21T23:59:59.000Z

44

MA 23100 and MA 23200 - FINAL EXAM INFORMATION Fall 2009 ...  

E-Print Network [OSTI]

MSEE = Materials and Electrical Engineering. You may refer to the campus map for their locations. For MA 23100, there's a link (Seating Arrangement) in the...

2009-12-15T23:59:59.000Z

45

DE-MA0002512  

Broader source: Energy.gov (indexed) [DOE]

Award No. 2. Modification No. 3. Effective Date Award No. 2. Modification No. 3. Effective Date 4. CFDA No. DE-MA0002512 03/27/2012 ASSISTANCE AGREEMENT 7. Period of Performance 6. Sponsoring Office 5. Awarded To Other Cooperative Agreement Grant test 10. Purchase Request or Funding Document No. 9. Authority 8. Type of Agreement 11. Remittance Address 12. Total Amount 13. Funds Obligated Govt. Share: $0.00 Cost Share : $0.00 Total : $0.00 This action: $0.00 Total : $0.00 test 14. Principal Investigator 15. Program Manager 16. Administrator test 19. Submit Reports To 18. Paying Office 17. Submit Payment Requests To 20. Accounting and Appropriation Data See Schedule 21. Research Title and/or Description of Project For the Recipient For the United States of America 22. Signature of Person Authorized to Sign

46

Discovery and utilization of sorghum genes (Ma5/Ma6)  

DOE Patents [OSTI]

Methods and composition for the production of non-flowering or late flowering sorghum hybrid. For example, in certain aspects methods for use of molecular markers that constitute the Ma5/Ma6 pathway to modulate photoperiod sensitivity are described. The invention allows the production of plants having improved productivity and biomass generation.

Mullet, John E; Rooney, William L; Klein, Patricia E; Morishige, Daryl; Murphy, Rebecca; Brady, Jeff A

2012-11-13T23:59:59.000Z

47

Taught degree MA in Philosophy  

E-Print Network [OSTI]

Philosophy Taught degree MA in Philosophy 1 year full time/2 years part time This MA offers an advanced general grounding in philosophy, which forms a good basis for further research. It includes modules in both the analytic and continental traditions of philosophy, reflecting the wide range

Sussex, University of

48

NREL: Energy Sciences - Jie Ma  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Jie Ma Jie Ma Postdoctoral Researcher Photo of Jie Ma Phone: (303) 384-6511 Email: jie.ma@nrel.gov At NREL Since: 2010 Dr. Ma graduated from the University of Science and Technology of China in 2004 and received a Ph.D. degree from Institute of Physics, Chinese Academy of Sciences in 2009. Jie joined the Computational Materials Science Team at NREL as a postdoctoral researcher in March, 2010. He is currently working on computational design and characterization of nanoscale materials for doping, water splitting, and solar cells, using quantum mechanical electronic structure calculation and molecular dynamics simulation techniques. Research Interests Low-dimensional systems (quantum dots, nanotube and nanowires, and surfaces) Doping in semiconductors. Solar cell and water splitting.

49

MA Mortenson | Open Energy Information  

Open Energy Info (EERE)

Mortenson Mortenson Jump to: navigation, search Name MA Mortenson Place Minnesota Zip 55440-0710 Sector Solar, Wind energy Product Construction and building firm active in the installation of wind and solar farms. References MA Mortenson[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. MA Mortenson is a company located in Minnesota . References ↑ "MA Mortenson" Retrieved from "http://en.openei.org/w/index.php?title=MA_Mortenson&oldid=348551" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties 429 Throttled (bot load) Error 429 Throttled (bot load)

50

DOE - Office of Legacy Management -- Indian Orchard MA Site - MA 08  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Indian Orchard MA Site - MA 08 Indian Orchard MA Site - MA 08 FUSRAP Considered Sites Indian Orchard, MA Alternate Name(s): Chapman Valve Manufacturing Company Chapman Valve Site Crane Company MA.08-3 MA.08-4 Location: 203 Hampshire Street, Indian Orchard, Massachusetts MA.08-2 Historical Operations: Machined extruded natural uranium rods and supplied valves and other products to MED and AEC. Also machined natural uranium rods into slugs for Brookhaven National Laboratory. MA.08-6 MA.08-7 MA.08-8 MA.08-14 Eligibility Determination: Eligible MA.08-2 Radiological Survey(s): Assessment Survey, Verification Survey MA.08-11 MA.08-12 Site Status: Certified - Certification Basis, Federal Register Notice included. MA.08-13 MA.08-14 Long-term Care Requirements: Long-Term Surveillance and Maintenance Requirements for Remediated FUSRAP Sites S07566_FUSRAP

51

MA - Office of Management - Energy Conservation Plan  

Broader source: Energy.gov (indexed) [DOE]

MA Energy Conservation Plan MA Energy Conservation Plan January 2010 1 Office of Management Office-Level Energy Conservation Plan January 2010 I. BACKGROUND This energy conservation plan represents an effort to reduce energy consumption within Office of Management (MA) office spaces and to increase employee awareness of and participation in energy conservation measures. II. SCOPE The plan and procedures in this document apply to all Office of Management (MA) office suites in the Forrestal and Germantown Facilities as well as the 950 L'Enfant Plaza Building. The actions and procedures set forth in this plan apply to each separate MA office suite as follows: MA-1: 4A-107 MA-43: 1F-039 MA-70: 7E-074 MA-1.1: 7E-028 MA-43: 1F-037 MA-70: 7E-054 MA-30: GH-081 MA-43:

52

Category:Boston, MA | Open Energy Information  

Open Energy Info (EERE)

Boston, MA Boston, MA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Boston, MA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Boston MA Massachusetts Electric Co.png SVFullServiceRestauran... 67 KB SVHospital Boston MA Massachusetts Electric Co.png SVHospital Boston MA M... 65 KB SVLargeHotel Boston MA Massachusetts Electric Co.png SVLargeHotel Boston MA... 65 KB SVLargeOffice Boston MA Massachusetts Electric Co.png SVLargeOffice Boston M... 65 KB SVMediumOffice Boston MA Massachusetts Electric Co.png SVMediumOffice Boston ... 65 KB SVMidriseApartment Boston MA Massachusetts Electric Co.png SVMidriseApartment Bos... 65 KB SVOutPatient Boston MA Massachusetts Electric Co.png SVOutPatient Boston MA...

53

CAES MaCS Home  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

is largely made possible through its partnership with the Advanced Test Reactor National Scientific User Facility (ATR NSUF). MaCS is complementary to the Boise State Center for...

54

MA Org Chart, January 15, 2015  

Energy Savers [EERE]

MA-66 MA-60 Paul Bosco, Director Pat Ferraro, Deputy Director Jay Glascock, Senior Advisor MA-80 Office of the Ombudsman Rita R. Franklin, Director Cathy Barchi, Dep. Director...

55

MA Org Chart, October 9, 2014  

Broader source: Energy.gov (indexed) [DOE]

Montoya, Dep. Director Office of Administrative Management and Support Office of Logistics and Facility Operations Office Travel Management MA-45 Umeki Thorne, Director MA-42...

56

MA Org Chart, October 20, 2014  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Montoya, Dep. Director Office of Administrative Management and Support Office of Logistics and Facility Operations Office Travel Management MA-45 Umeki Thorne, Director MA-42...

57

US NE MA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

NE MA NE MA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 $3,000 US NE MA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 2,000 4,000 6,000 8,000 10,000 12,000 US NE MA Site Consumption kilowatthours $0 $250 $500 $750 $1,000 $1,250 $1,500 US NE MA Expenditures dollars ELECTRICITY ONLY average per household * Massachusetts households use 109 million Btu of energy per home, 22% more than the U.S. average. * The higher than average site consumption results in households spending 22% more for energy than the U.S. average. * Less reliance on electricity for heating, as well as cool summers, keeps average site electricity consumption in the state low relative to other parts of the U.S. However, spending on electricity is closer to the national average due to higher

58

US NE MA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

NE MA NE MA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 $3,000 US NE MA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 2,000 4,000 6,000 8,000 10,000 12,000 US NE MA Site Consumption kilowatthours $0 $250 $500 $750 $1,000 $1,250 $1,500 US NE MA Expenditures dollars ELECTRICITY ONLY average per household * Massachusetts households use 109 million Btu of energy per home, 22% more than the U.S. average. * The higher than average site consumption results in households spending 22% more for energy than the U.S. average. * Less reliance on electricity for heating, as well as cool summers, keeps average site electricity consumption in the state low relative to other parts of the U.S. However, spending on electricity is closer to the national average due to higher

59

MA Org Chart, August 01, 2013  

Broader source: Energy.gov (indexed) [DOE]

MA-1 MA-1 Ingrid Kolb, Director Chief Acquisition Officer (Vacant) Laurie Morman, Chief of Staff Office of Resource Management and Planning MA-1.1 Marilyn Dillon, Director Willie Mae Ingram, Dep. Director (Acting) Office of Acquisition & Project Management Paul Bosco, Director David Boyd, Dep. Director Jay Glascock, Senior Advisor Office of Policy MA-63 Berta Schreiber Director Office of Contract Management Patrick Ferraro Director Office of Project Management Michael Peek Director Office of Headquarters Procurement Services Mark Brady Director Office of Property Management Carmelo Melendez Director MA-60 Office of Scheduling and Advance Anthony Rediger, Director James Covey, Dep. Director MA-10 MA-30 MA-40 MA-70 MA-90 Office of Aviation

60

WIND DATA REPORT Nantucket, MA  

E-Print Network [OSTI]

. Rogers Anthony F. Ellis July 12, 2006 Report template version 1.3 Renewable Energy Research Laboratory Research Laboratory (RERL) at the University of Massachusetts, Amherst in the course of performing work 12, 2006 Renewable Energy Research Laboratory Page 1 University of Massachusetts, Amherst Amherst, MA

Massachusetts at Amherst, University of

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61

WIND DATA REPORT Wellfleet, MA  

E-Print Network [OSTI]

by the Renewable Energy Research Laboratory (RERL) at the University of Massachusetts, Amherst in the course, 2007 Renewable Energy Research Laboratory Page 1 University of Massachusetts, Amherst Amherst, MA 01003. Manwell Anthony L. Rogers Anthony F. Ellis May 2, 2007 Report template version 3.0 Renewable Energy

Massachusetts at Amherst, University of

62

WIND DATA REPORT Nantucket, MA  

E-Print Network [OSTI]

by the Renewable Energy Research Laboratory (RERL) at the University of Massachusetts, Amherst in the course L. Rogers Anthony F. Ellis March 30, 2006 Report template version 1.3 Renewable Energy Research Laboratory University of Massachusetts, Amherst 160 Governors Drive, Amherst, MA 01003 www

Massachusetts at Amherst, University of

63

InThrMa | Open Energy Information  

Open Energy Info (EERE)

InThrMa InThrMa Jump to: navigation, search Tool Summary LAUNCH TOOL Name: InThrMa Agency/Company /Organization: InThrMa Sector: Energy Focus Area: - HVAC Resource Type: Software/modeling tools User Interface: Website, Mobile Device Website: www.inthrma.com/ Web Application Link: www.inthrma.com/ Cost: Paid Language: English InThrMa Screenshot References: InThrMa[1] Logo: InThrMa Web based HVAC EMS for Internet connected thermostats, focusing on energy efficiency, including Auto Demand Response capabilities. Harnessing Data & Technology To Derive HVAC Efficiency Overview InThrMa's HVAC Energy Management Suite (EMS) allows users to manage and optimize their HVAC systems from any web browser or mobile phone. The InThrMa EMS provides various tools for programming, monitoring and

64

Taught degrees MA in Literature and Philosophy  

E-Print Network [OSTI]

Philosophy Taught degrees MA in Literature and Philosophy 1 year full time/2 years part time This degree is taught jointly by Philosophy and English faculty. Refer to page 87 for details. MA in Philosophy 1 year full time/2 years part time This MA offers an advanced general grounding in philosophy

Sussex, University of

65

Office of Information Resources (MA-90) | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Office of Information Resources (MA-90) Office of Information Resources (MA-90) Freedom of Information 2007 Annual Report Office of Information Resources (MA-90) More Documents &...

66

Ma-Brueckner correlation energy  

Science Journals Connector (OSTI)

We point out that the e2 dependence of the term in the correlation energy of a high-density electron gas, proportional to the gradient squared of the charge density, was rigorously derived by Ma and Brueckner only for infinitely long-wavelength variations in the charge density. We also correct an error made in obtaining the coefficient of this term which arose because of long-range Coulomb anomalies in the exchange energy which they subtracted from the exchange-correlation energy.

Leonard Kleinman and T. Tamura

1989-08-15T23:59:59.000Z

67

MA transmutation performance in the optimized MYRRHA  

SciTech Connect (OSTI)

MYRRHA (multi-purpose hybrid research reactor for high-tech applications) is a multipurpose research facility currently being developed at SCK-CEN. It will be able to work in both critical and subcritical modes and, cooled by lead-bismuth eutectic. In this paper the minor actinides (MA) transmutation capabilities of MYRRHA are investigated. (Pu + Am, U) MOX fuel and (Np + Am + Cm, Pu) Inert Matrix Fuel test samples have been loaded in the central channel of the MYRRHA critical core and have been irradiated during five cycles, each one consisting of 90 days of operation at 100 MWth and 30 days of shutdown. The reactivity worth of the test fuel assembly was about 1.1 dollar. A wide range of burn-up level has been achieved, extending from 42 to 110 MWd/kg HM, the samples with lower MA-to-Pu ratios reaching the highest burn-up. This study has highlighted the importance of the initial MA content, expressed in terms of MA/Pu ratio, on the transmutation rate of MA elements. For (Pu + Am, U) MOX fuel samples, a net build-up of MA is observed when the initial content of MA is very low (here, 1.77 wt% MA/Pu) while a net decrease in MA is observed in the sample with an initial content of 5 wt%. This suggests the existence of some 'equilibrium' initial MA content value beyond which a net transmutation is achievable.

Malambu, E.; Van den Eynde, G.; Fernandez, R.; Baeten, P.; Ait Abderrahim, H. [SCK-CEN, Boeretang 200, BE-2400 Mol (Belgium)

2013-07-01T23:59:59.000Z

68

DOE - Office of Legacy Management -- Shpack Landfill - MA 06  

Office of Legacy Management (LM)

Shpack Landfill - MA 06 Shpack Landfill - MA 06 FUSRAP Considered Sites Shpack Landfill, NY Alternate Name(s): Attleboro, MA Metals and Controls Site Norton Landfill area MA.06-2 MA.06-3 Location: 68 Union Road, Norton, Massachusetts MA.06-2 Historical Operations: No AEC activities were conducted on site. Contamination was suspected from disposal of materials containing uranium and zirconium ash. MA.06-2 MA.06-3 Eligibility Determination: Eligible MA.06-1 Radiological Survey(s): Assessment Surveys MA.06-4 MA.06-5 MA.06-6 Site Status: Cleanup in progress by U.S. Army Corps of Engineers. MA.06-7 MA.06-8 USACE Website Long-term Care Requirements: To be determined upon completion. Also see Documents Related to Shpack Landfill, NY MA.06-1 - DOE Memorandum; Meyers to Hart; Subject: Shpack Landfill,

69

M.A. Silva Dias,  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1 a 260. 1 a 260. 1 Modelando o Impacto Climático Regional e Remoto do Desmatamento M.A. Silva Dias, 1 R. Avissar, 2 e P. Silva Dias 1,3 As observações e os modelos concordam que os níveis atuais e os padrões de desmatamento da Amazônia de fato intensificam as transferências de massa e energia entre a terra e a atmosfera por meio da criação de circulações impulsionadas termicamente com efeitos significativos sobre a precipitação, mas que variam sazonal e regionalmente. Isso também indicou a necessidade de identificar o limiar onde o aumento do desmatamento realmente implica a diminuição de pluviosidade, conforme apontado pela maioria dos modelos de circulação geral de baixa resolução. Grande parte dos estudos sobre o impacto remoto ainda é exploratória, mas indicam que

70

M.A. POLITICAL SCIENCE Application Checklist  

E-Print Network [OSTI]

M.A. POLITICAL SCIENCE Application Checklist IMPORTANT NOTES 1. Please submit all Application below. 6. Applicants to the M.A. Political Science Program normally should have a four-year baccalaureate degree in Political Science. UNBC and the Political Science Program are committed

Northern British Columbia, University of

71

Green light emitting diode grown on thick strain-reduced GaN template  

Science Journals Connector (OSTI)

Abstract We report a green light-emitting diode (LED) grown on thick strain-reduced GaN template. As the injection current changes from 20mA to 120mA, blue-shift of EL peak wavelength reduces from 9.3nm for the LED on sapphire substrate to 6.8nm for the LED grown on thick strain-reduced GaN template. Furthermore, the light output power and external quantum efficiency of the LED on thick strain-reduced GaN template are respectively 1.48mW and 2.5% at the forward current of 20mA, which is twice as much as the LED on sapphire substrate. In contrast, the reverse current is 2?A lower than that of the LED on the sapphire at ?8V.

Jiankun Yang; Tongbo Wei; Qiang Hu; Ziqiang Huo; Baojuan Sun; Ruifei Duan; Junxi Wang

2015-01-01T23:59:59.000Z

72

U.S. Total Exports  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

73

U.S. LNG Imports from Indonesia  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

74

U.S. LNG Imports from Brunei  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

75

U.S. LNG Imports from Egypt  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

76

U.S. LNG Imports from Canada  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

77

U.S. LNG Imports from Trinidad/Tobago  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

78

U.S. LNG Imports from Peru  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

79

U.S. LNG Imports from Malaysia  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

80

U.S. LNG Imports from Oman  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

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81

U.S. LNG Imports from Australia  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

82

U.S. LNG Imports from Nigeria  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

83

U.S. LNG Imports from Yemen  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

84

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

85

U.S. LNG Imports from Algeria  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

86

U.S. Natural Gas Imports by Pipeline from Mexico  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

87

MA 232 Exam 1 (Green) Spring 2014  

E-Print Network [OSTI]

MA 23200 - Exam 1 (Green). 1. Find the area of the .... D. 4. E. Does not exist. 12. The velocity of a car over the time period 0 ? t ? 3 is given by the function.

2014-02-03T23:59:59.000Z

88

MA 16020 SI slide.pptx  

E-Print Network [OSTI]

SI Study Sessions for MA 16020 -? Spring 2015. Mondays. 4:30 5:20 KRCH 464. Tuesdays. 5:30 6:20 RHPH 162. Thursdays. 4:30 5:20 ARMS 1103.

OwenDavis

2015-01-12T23:59:59.000Z

89

DOE - Office of Legacy Management -- Watertown Arsenal - MA 02  

Office of Legacy Management (LM)

Watertown Arsenal - MA 02 Watertown Arsenal - MA 02 FUSRAP Considered Sites Site: WATERTOWN ARSENAL (MA.02 ) Eliminated from consideration under FUSRAP - Referred to EPA, State of Massachusetts, and the NRC Designated Name: Not Designated Alternate Name: None Location: Building Site 421 , Watertown , Massachusetts MA.02-1 Evaluation Year: 1985 MA.02-2 MA.02-3 Site Operations: Building 421 was used in the late 1940's and early 1950's by M.I.T. under Contract #AT (30-1)-956 for work on African Ores, and a modified ion-exchange technique was developed. Activities at Buildings 34, 41 and the GSA Site were conducted under AEC licensed. MA.02-4 MA.02-5 MA.02-6 Site Disposition: Eliminated - No Authority MA.02-6 MA.02-7 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium MA.02-4

90

DOE - Office of Legacy Management -- Woburn Landfill - MA 07  

Office of Legacy Management (LM)

Woburn Landfill - MA 07 FUSRAP Considered Sites Site: Woburn Landfill (MA.07) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name:...

91

DOE - Office of Legacy Management -- Tracerlab Inc - MA 11  

Office of Legacy Management (LM)

Tracerlab Inc - MA 11 Tracerlab Inc - MA 11 FUSRAP Considered Sites Site: TRACERLAB, INC. (MA.11 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 130 High Street , Boston , Massachusetts MA.11-1 Evaluation Year: 1987 MA.11-3 Site Operations: Research and development regarding uranium irradiation and cesium blocks during the early 1950s. MA.11-1 MA.11-3 Site Disposition: Eliminated - NRC licensed MA.11-2 MA.11-3 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium, Cesium MA.11-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP Also see Documents Related to TRACERLAB, INC. MA.11-1 - Tracerlab Letter; Epple to Mason; Subject: Steps to Secure

92

Analysis of sediments and soils for chemical contamination for the design of US Navy homeport facility at East Waterway of Everett Harbor, Washington. Final report. [Macoma inquinata; Mytilus edulis  

SciTech Connect (OSTI)

Contaminated sediments in the East Waterway of Everett Harbor, Washington, are extremely localized; they consist of a layer of organically-rich, fine sediments overlying a relatively cleaner, more sandy native material. The contaminated layer varies in thickness throughout the waterway from as much as 2 meters to only a few centimeters. Generally, the layer is thicker and more contaminated at the head of the waterway (northern end) and becomes thinner and less contaminated as one proceeds southerly out of the waterway and into Port Gardner. These sediments contain elevated levels of heavy metals and polynuclear aromatic hydrocarbons (PAH) and scattered concentrations of polychlorinated biphenyls (PCB). Approximately 500,000 cubic yards of material exhibit elevated chemical contamination compared to Puget Sound background levels. The contaminated sediments in this waterway require biological testing before decisions can be made regarding the acceptability of unconfined disposal.

Anderson, J.W.; Crecelius, E.A.

1985-03-01T23:59:59.000Z

93

DOE - Office of Legacy Management -- National Fireworks Ordnance Corp - MA  

Office of Legacy Management (LM)

Fireworks Ordnance Corp - Fireworks Ordnance Corp - MA 13 FUSRAP Considered Sites Site: NATIONAL FIREWORKS ORDNANCE CORP (MA.13) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: American Potash and Chemical Corporation MA.13-3 Location: West Hanover , Massachusetts MA.13-1 Evaluation Year: 1991 MA.13-1 Site Operations: Performed bench scale research and development on uranium forming during the 1960s. MA.13-2 MA.13-3 Site Disposition: Eliminated - Potential for contamination considered remote based on the limited quantity of materials handled MA.13-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium Metal and Powders MA.13-3 Radiological Survey(s): None Indicated MA.13-2 Site Status: Eliminated from consideration under FUSRAP

94

DOE - Office of Legacy Management -- Fenwal Inc - MA 14  

Office of Legacy Management (LM)

Fenwal Inc - MA 14 Fenwal Inc - MA 14 FUSRAP Considered Sites Site: Fenwal, Inc. (MA.14 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Ashland , Massachusetts MA.14-1 Evaluation Year: 1994 MA.14-2 MA.14-3 Site Operations: Performed pilot scale explosion suppression tests on uranium contaminated magnesium fluoride powder in the late 1960s. MA.14-1 MA.14-3 Site Disposition: Eliminated - Potential for contamination considered remote based on the limited quantity of materials handled MA.14-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium MA.14-1 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to Fenwal, Inc.

95

Fabrication technology for ODS Alloy MA957  

SciTech Connect (OSTI)

A successful fabrication schedule has been developed at Carpenter Technology Corporation for the production of MA957 fuel and blanket cladding. Difficulties with gun drilling, plug drawing and recrystallization were overcome to produce a pilot lot of tubing. This report documents the fabrication efforts of two qualified vendors and the support studies performed at WHC to develop the fabrication-schedule.

ML Hamilton; DS Gelles; RJ Lobsinger; MM Paxton; WF Brown

2000-03-16T23:59:59.000Z

96

Ma, Dong and Gress QUARTERLY PROGRESS REPORT  

E-Print Network [OSTI]

and Leachability of Coal Combustion Residues in Florida Principal investigator: Lena Q. Ma- Environmental soil of this study is to determine the physical and chemical characteristics of coal combustion residues (CCR chemistry (Professor) Affiliation: Soil and Water Science Department, UF, Gainesville, FL 32611 Associate

Ma, Lena

97

Grid Security: Expecting the Mingchao Ma  

E-Print Network [OSTI]

Grid Security: Expecting the Unexpected Mingchao Ma STFC � Rutherford Appleton Laboratory, UK #12;Slide 2 Overview � Security Service Challenges (SSC) Review � Grid Security Incident � What had happened of the LCG/EGEE Grid Sites (Dec 2008) http://www.gridpp.ac.uk/security/ssc/ https

University College London

98

DOE - Office of Legacy Management -- Nuclear Metals Inc - MA 09  

Office of Legacy Management (LM)

Metals Inc - MA 09 Metals Inc - MA 09 FUSRAP Considered Sites Site: NUCLEAR METALS, INC. (MA.09) Eliminated from consideration under FUSRAP - Licensed facility - included in NRC action plan (Site Decommissioning Management Plan) in 1990 for cleanup Designated Name: Not Designated Alternate Name: None Location: 1555 Massachusetts Ave. , Cambridge , Massachusetts MA.09-2 Evaluation Year: 1987 MA.09-1 Site Operations: Produced natural uranium tubes for Savannah River reactor program and fabricated power reactor fuel elements under AEC/NRC license. MA.09-4 MA.09-3 Site Disposition: Eliminated - No Authority under FUSRAP - AEC licensed operation MA.09-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium, Thorium MA.09-1 Radiological Survey(s): None Indicated

99

DOE - Office of Legacy Management -- Manufacturing Laboratories Inc - MA  

Office of Legacy Management (LM)

Manufacturing Laboratories Inc - MA Manufacturing Laboratories Inc - MA 0-04 FUSRAP Considered Sites Site: MANUFACTURING LABORATORIES, INC. (MA.0-04 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 272 Northampton Street , Boston , Massachusetts MA.0-04-1 Evaluation Year: 1987 MA.0-04-3 Site Operations: Developed a process for making projectiles from depleted uranium during the early 1950s. MA.0-04-3 Site Disposition: Eliminated - Potential for contamination considered remote based on limited scope of operations at the site MA.0-04-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium MA.0-04-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP

100

^ ^ Cambridge Technology, Inc. -= 109 Smith Place, Cambridge, MA 02138  

E-Print Network [OSTI]

^ ^ Cambridge Technology, Inc. - = 109 Smith Place, Cambridge, MA 02138 Tel: 617-441-0600 Fax: 617. = 109 Smith Place, Cannbridge, MA 02138 Tel. 617-441-0600 Fax 617-497-8800 Cambridge Technology's line

Kleinfeld, David

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
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101

DOE - Office of Legacy Management -- Norton Co - MA 12  

Office of Legacy Management (LM)

the File; Subject: Elimination Recommendation; October 26, 1987 MA.12-4 - AEC Letter; White to Warde; Subject: Thorium Samples; February 19, 1954 MA.12-5 - AEC Memorandum; Morgan...

102

Supplementary Figure 1 SHAPE-MaP data analysis pipeline.  

E-Print Network [OSTI]

Supplementary Figure 1 SHAPE-MaP data analysis pipeline. Outline of software pipeline that fully.1 GHz Intel Core i7 and 16 GB RAM). This strategy is implemented in the SHAPE-MaP Folding Pipeline

Cai, Long

103

CSC 1051 M.A. Papalaskari, Villanova University Conditional Statements  

E-Print Network [OSTI]

CSC 1051 M.A. Papalaskari, Villanova University Conditional Statements Dr. Mary-Angela Papalaskari); } CSC 1051 M.A. Papalaskari, Villanova University A boolean expression Review if true, do this if more statement 1 true false statement2 CSC 1051 M.A. Papalaskari, Villanova University condition evaluated

Papalaskari, Mary-Angela

104

Economics & Finance MA or BSc (Single Honours Degrees)  

E-Print Network [OSTI]

88 Economics & Finance MA or BSc (Single Honours Degrees) Applied Economics Economics Financial Economics BA (International Honours Degrees) Economics See page 13 MA or BSc (Joint Honours Degrees) Economics and one of: Management Mathematics MA (Joint Honours Degrees) Economics and one of: Ancient

Brierley, Andrew

105

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA July 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for July 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

106

Data Update for Mt. Tom, Holyoke, MA February 2006  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA February 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for February 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

107

Data Update for Mt. Tom, Holyoke, MA January 2006  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA January 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for December 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

108

Data Update for Mt. Tom, Holyoke, MA February 2008  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA February 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for February 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

109

Data Update for Mt. Tom, Holyoke, MA January 2007  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA January 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for January 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

110

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA June 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for June 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

111

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA March 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for March 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

112

Data Update for Mt. Tom, Holyoke, MA August 2007  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA August 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for August 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

113

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA April 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for April 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

Massachusetts at Amherst, University of

114

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA March 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for March 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

115

Data Update for Mt. Tom, Holyoke, MA February 2007  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA February 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for February 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

116

Data Update for Mt. Tom, Holyoke, MA November 2007  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA November 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for November 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

117

Data Update for Mt. Tom, Holyoke, MA September 2007  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA September 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for September 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

118

Data Update for Mt. Tom, Holyoke, MA September 2005  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA September 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for September 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

119

Data Update for Mt. Tom, Holyoke, MA January 2008  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA January 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for January 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

120

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA April 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for April 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Data Update for Mt. Tom, Holyoke, MA October 2005  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA October 2005 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for October 2005 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

122

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA March 2006 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Melissa Ray Monthly Data Summary for March 2006 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59.2" N, 72

Massachusetts at Amherst, University of

123

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA May 2008 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for May 2008 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

124

Data Update for Mt. Tom, Holyoke, MA October 2007  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA October 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for October 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

125

Data Update for Mt. Tom, Holyoke, MA Prepared for  

E-Print Network [OSTI]

Data Update for Mt. Tom, Holyoke, MA May 2007 Prepared for Massachusetts Technology Collaborative 75 North Drive, Westborough, MA 01581 By Puneet Malhotra Monthly Data Summary for May 2007 This update summarizes the monthly data results for the Mt. Tom monitoring site in Holyoke, MA, at 42° 14' 59

Massachusetts at Amherst, University of

126

El Ma Electronic Machining srl | Open Energy Information  

Open Energy Info (EERE)

Ma Electronic Machining srl Ma Electronic Machining srl Jump to: navigation, search Name El.Ma. Electronic Machining srl Place Riva del Garda (TN), Italy Zip 38066 Sector Hydro, Hydrogen, Solar, Wind energy Product String representation "Italy-based, in ... solar sectors." is too long. References El.Ma. Electronic Machining srl[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. El.Ma. Electronic Machining srl is a company located in Riva del Garda (TN), Italy . References ↑ "El.Ma. Electronic Machining srl" Retrieved from "http://en.openei.org/w/index.php?title=El_Ma_Electronic_Machining_srl&oldid=344591" Categories: Clean Energy Organizations Companies Organizations

127

Corrosion of MA754 and MA956 in a Commercial Aluminum Melter  

SciTech Connect (OSTI)

The University of North Dakota Energy & Environmental Research Center is working with Oak Ridge National Laboratory to test two oxide dispersion-strengthened alloys that could be used to construct very high-temperature heat recuperators for the aluminum-melting industry. For the initial tests, uncooled rings of MA754 and MA956 piping were exposed for 5 months to gases leaving an aluminum melter furnace at 1200 1290 C. The MA956 suffered spotty areas of severe corrosion and lost 25% of its weight. Scanning electron microscopy showed that there were small spots of alkali-rich corrosion products on the alloy surfaces, indicating the impact of droplets of fluxing agents. The corrosion products in these areas were mixed Fe, Cr, and Al oxides, which were depleted in Cr near the gas surface. However, Al concentrations in the remaining metal were typically between 3.5% and 4.0%, so there was a sufficient reservoir of Al remaining in the alloy to prevent simple breakaway corrosion which could have occurred if the Al were significantly depleted. The MA754 lost approximately 15% of its weight and showed void formation within 2 mm of the gas metal surfaces. Within the porous area, the Cr had largely segregated into oxide precipitates up to 50 9m in diameter, leaving the remaining metal Ni-rich. Below the porous layer, the alloy composition was relatively unchanged. Remains of Na- and Al-rich particles that had impacted the surface sporadically were visible but had not obviously affected the surface scale as they had with the MA956.

Hurley, John P. [University of North Dakota Energy & Environmental Research Center] [University of North Dakota Energy & Environmental Research Center; Kelley, Carl [Natures Fuel, 410 East Cook Road, Fort Wayne, IN 46825, USA] [Natures Fuel, 410 East Cook Road, Fort Wayne, IN 46825, USA; Bornstein, Norman S. [Consultant] [Consultant; Wright, Ian G [ORNL] [ORNL

2008-01-01T23:59:59.000Z

128

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

129

KwanliuMa_NERSC2011.ppt  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis and Visualization Analysis and Visualization Computing Requirements A Case Study Kwan-Liu Ma University of California, Davis SciDAC Institute for Ultrascale Visualization Outline * SciDAC Institute for Ultrascale Visualization * Visualization Solutions for Turbulent Combustion Simulations * A Case Study on Particle Trajectories Data Visualization Turbulent Combustion Simulations  Jackie Chen, Sandia National Laboratory  Direct numerical simulation tools are being developed Turbulent Combustion Simulations * High fidelity modeling is required to reliably predict efficiency and pollutant emission for new engines and new fuels * The current simulation code running on a supercomputer like the Cray XT5 uses up to 48,000 cores and over 14 million CPU hours per run

130

GaN High Power Devices  

SciTech Connect (OSTI)

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

131

oe oe oe oe oe Mi ye ma lel gvu  

E-Print Network [OSTI]

& & V ? c c c c Soprano Alto Tenor Bass q»¡¶ oe oe oe oe oe Mi ye ma lel gvu oe oe oe oe oe rot yis ra el o oe oe oe oe oe Mi ye ma lel o tan mi tan mi oe oe oe oe oe Mi ye ma lel o yim ne? yim ne tan mi oe oe oe oe oe Mi ye ma lel gvu w ah oe oe oe oe oe Hen be chol dor ya yim ne w rot

Setiawan, Hendra

132

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

133

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

134

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

135

J. Michael Starling, M.A. Department of Educational Psychology  

E-Print Network [OSTI]

J. Michael Starling, M.A. Department of Educational Psychology Ball State University Muncie.D. Ball State University 2014 (Expected) Educational Psychology (General) Cognate: Research Methodology M.A. Ball State University 2009 School Psychology B.A. Anderson University 2008 Psychology Graduate

Wu, Mingshen

136

FRACTIONAL SKEW MONOID RINGS P. ARA, M.A. GONZ  

E-Print Network [OSTI]

FRACTIONAL SKEW MONOID RINGS P. ARA, M.A. GONZ ?? ALEZ­BARROSO, K.R. GOODEARL, AND E. PARDO FQM­298 of the Junta de Andaluc??�a. 1 #12; 2 P. ARA, M.A. GONZ ?? ALEZ­BARROSO, K.R. GOODEARL, AND E

Bigelow, Stephen

137

(1) Biology Department, Woods Hole Oceanographic Institution, Woods Hole, MA 02543 USA(1) Biology Department, Woods Hole Oceanographic Institution, Woods Hole, MA 02543 USA (2) Harvard Medical School, Boston, MA 02114 USA(2) Harvard Medical School, Boston  

E-Print Network [OSTI]

(1) Biology Department, Woods Hole Oceanographic Institution, Woods Hole, MA 02543 USA(1) Biology Department, Woods Hole Oceanographic Institution, Woods Hole, MA 02543 USA (2) Harvard Medical School, Boston, MA 02114 USA(2) Harvard Medical School, Boston, MA 02114 USA (3) Section on Auditory Mechanics, NIDCD

138

Beta decay of Ga-62  

E-Print Network [OSTI]

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

139

Universit Paris Descartes -UFR STAPS -Planning 2013-2014 (proposition 1B2) Arts Thrapies D 1 Ma 1 V 1 D 1 Me 1 S 1 S 1 Ma 1 J 1 D 1 Ma 1  

E-Print Network [OSTI]

Université Paris Descartes - UFR STAPS - Planning 2013-2014 (proposition 1B2) Arts Thérapies D 1 Ma 1 V 1 D 1 Me 1 S 1 S 1 Ma 1 J 1 D 1 Ma 1 L 2 Me 2 S 2 L 2 J 2 D 2 D 2 Me 2 V 2 L 2 Me 2 Ma 3 J 3 D 3 Ma 3 V 3 L 3 L 3 J 3 S 3 Ma 3 J 3 Me 4 V 4 L 4 Me 4 S 4 Ma 4 Ma 4 V 4 D 4 Me 4 V 4 J 5 S 5 Ma 5 J 5 D

Pellier, Damien

140

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect (OSTI)

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Johnston LFG (MA RPS Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

LFG (MA RPS Biomass Facility LFG (MA RPS Biomass Facility Jump to: navigation, search Name Johnston LFG (MA RPS Biomass Facility Facility Johnston LFG (MA RPS Sector Biomass Facility Type Landfill Gas Location Rhode Island Coordinates 41.5800945°, -71.4774291° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.5800945,"lon":-71.4774291,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

142

Telecommunications Concentration: Grady College MA Thesis Program Planning Form  

E-Print Network [OSTI]

Telecommunications Concentration: Grady College MA Thesis Program Planning Form Student: Advisor ( ) Telecommunication Policy JRMC 8220 ( ) Telecommunications Programming and Criticism JRMC 8230 ( ) Emerging Telecommunication Technologies JRMC 8240 ( ) Special Topics in Telecommunications JRMC 8365 ( ) Media Economics JRMC

Arnold, Jonathan

143

Index of /~arshak/F04/MA266/matlab  

E-Print Network [OSTI]

Index of /~arshak/F04/MA266/matlab. [ICO], Name Last modified Size Description. [DIR], Parent Directory, -. [ ], func1.m, 21-Sep-2004 23:46, 39. [ ], func2.

144

MaJIC: A Matlab Just-In-Time Compiler  

Science Journals Connector (OSTI)

This paper describes our experience with MaJIC, a just-intime compiler for MATLAB. In the recent past, several compiler projects claimed large performance improvements when processing MATLAB code. Most of these projects

George Almasi; David A. Padua

2001-01-01T23:59:59.000Z

145

MA 125-4 CR PH 105-4 CR  

E-Print Network [OSTI]

490-3 CR Mechanical Engineering Design I I Proj Lab Proj Lab MA 125-4 CR Calculus I or Equivalent M MEMA 125-4 CR Calculus I or Equivalent PH 105-4 CR Gen Physics with Calculus MA 126-4 CR Calculus I I or Equivalent M Required Course Elective Course Prerequisite NS M W LAB Proj Lab Natural Science Mathematics

Carver, Jeffrey C.

146

A new 40 MA ranchero explosive pulsed power system  

SciTech Connect (OSTI)

We are developing a new high explosive pulsed power (HEPP) system based on the 1.4 m long Ranchero generator which was developed in 1999 for driving solid density z-pinch loads. The new application requires approximately 40 MA to implode similar liners, but the liners cannot tolerate the 65 {micro}s, 3 MA current pulse associated with delivering the initial magnetic flux to the 200 nH generator. To circumvent this problem, we have designed a system with an internal start switch and four explosively formed fuse (EFF) opening switches. The integral start switch is installed between the output glide plane and the armature. It functions in the same manner as a standard input crowbar switch when armature motion begins, but initially isolates the load. The circuit is completed during the flux loading phase using post hole convolutes. Each convolute attaches the inner (coaxial) output transmission line to the outside of the outer coax through a penetration of the outer coaxial line. The attachment is made with the conductor of an EFF at each location. The EFFs conduct 0.75 MA each, and are actuated just after the internal start switch connects to the load. EFFs operating at these parameters have been tested in the past. The post hole convolutes must withstand as much as 80 kV at peak dl/dt during the Ranchero load current pulse. We describe the design of this new HEPP system in detail, and give the experimental results available at conference time. In addition, we discuss the work we are doing to test the upper current limits of a single standard size Ranchero module. Calculations have suggested that the generator could function at up to {approx}120 MA, the rule of thumb we follow (1 MA/cm) suggests 90 MA, and simple flux compression calculations, along with the {approx}4 MA seed current available from our capacitor bank, suggests 118 MA is the currently available upper limit.

Goforth, James [Los Alamos National Laboratory; Herrera, Dennis [Los Alamos National Laboratory; Oona, Hank [Los Alamos National Laboratory; Torres, David [Los Alamos National Laboratory; Atchison, W L [Los Alamos National Laboratory; Colgate, S A [Los Alamos National Laboratory; Griego, J R [Los Alamos National Laboratory; Guzik, J [Los Alamos National Laboratory; Holtkamp, D B [Los Alamos National Laboratory; Idzorek, G [Los Alamos National Laboratory; Kaul, A [Los Alamos National Laboratory; Kirkpatrick, R C [Los Alamos National Laboratory; Menikoff, R [Los Alamos National Laboratory; Reardon, P T [Los Alamos National Laboratory; Reinovsky, R E [Los Alamos National Laboratory; Rousculp, C L [Los Alamos National Laboratory; Sgro, A G [Los Alamos National Laboratory; Tabaka, L J [Los Alamos National Laboratory; Tierney, T E [Los Alamos National Laboratory; Watt, R G [Los Alamos National Laboratory

2009-01-01T23:59:59.000Z

147

MaRIE theory, modeling and computation roadmap executive summary  

SciTech Connect (OSTI)

The confluence of MaRIE (Matter-Radiation Interactions in Extreme) and extreme (exascale) computing timelines offers a unique opportunity in co-designing the elements of materials discovery, with theory and high performance computing, itself co-designed by constrained optimization of hardware and software, and experiments. MaRIE's theory, modeling, and computation (TMC) roadmap efforts have paralleled 'MaRIE First Experiments' science activities in the areas of materials dynamics, irradiated materials and complex functional materials in extreme conditions. The documents that follow this executive summary describe in detail for each of these areas the current state of the art, the gaps that exist and the road map to MaRIE and beyond. Here we integrate the various elements to articulate an overarching theme related to the role and consequences of heterogeneities which manifest as competing states in a complex energy landscape. MaRIE experiments will locate, measure and follow the dynamical evolution of these heterogeneities. Our TMC vision spans the various pillar science and highlights the key theoretical and experimental challenges. We also present a theory, modeling and computation roadmap of the path to and beyond MaRIE in each of the science areas.

Lookman, Turab [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

148

RECIPIENT:Gwinnett Co, GA  

Broader source: Energy.gov (indexed) [DOE]

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

149

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

150

DOE - Office of Legacy Management -- Metals and Controls Corp FSM Dept - MA  

Office of Legacy Management (LM)

and Controls Corp FSM Dept - and Controls Corp FSM Dept - MA 21 FUSRAP Considered Sites Site: METALS AND CONTROLS CORP., FSM DEPT. ( MA.21 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: M&C Texas Instruments MA.21-1 Location: Attleboro , Massachusetts MA.21-1 Evaluation Year: Circa 1987 MA.21-4 Site Operations: Nuclear fuel fabrication during the 1950s and 1960s. MA.21-2 Site Disposition: Eliminated - NRC licensed MA.21-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium MA.21-3 Radiological Survey(s): Yes MA.21-3 Site Status: Eliminated from consideration under FUSRAP MA.21-2 Also see Documents Related to METALS AND CONTROLS CORP., FSM DEPT. MA.21-1 - Texas Instruments Letter; Veale to Duffy; Subject: Further

151

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

152

35 Garvey Street Everett, Massachusetts 02149  

E-Print Network [OSTI]

.............................................................................................................................. 2 RECORDING THERMOMETER ...............................................................................11 INSTALLATION FOR OPTIONAL RECORDING THERMOMETER ....................................................................................................................................................................12 REPLACEMENT PARTS FOR 24 HOUR THERMOMETER

Kleinfeld, David

153

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

154

SE-MA-NO Electric Coop | Open Energy Information  

Open Energy Info (EERE)

MA-NO Electric Coop MA-NO Electric Coop Jump to: navigation, search Name SE-MA-NO Electric Coop Place Missouri Utility Id 16851 Utility Location Yes Ownership C NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Municipal HPS 100 W Lighting Municipal HPS 250 W Lighting Residential Residential Residential/Commercial HPS 100 W Lighting Residential/Commercial HPS 250 W Lighting Average Rates Residential: $0.0804/kWh Commercial: $0.0763/kWh Industrial: $0.0649/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a"

155

PIA - Management and Administration (MA) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

PIA - Management and Administration (MA) PIA - Management and Administration (MA) PIA - Management and Administration (MA) The E-Government Act of 2002 requires Federal agencies to perform Privacy Impact Assessments (PIAs), an analysis of how information is handled, in order: (i) to ensure handling conforms to applicable legal, regulatory, and policy requirements regarding privacy, (ii) to determine the risks and effects of collecting, maintaining and disseminating information in identifiable form in an electronic information system, and (iii) to examine and evaluate protections and alternative processes for handling information to mitigate potential privacy risks. The DOE PIA process helps to ensure privacy protections are considered and implemented throughout the system life cycle. Following are all PIAs that have been done for Management and

156

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

157

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto

1981-01-01T23:59:59.000Z

158

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network [OSTI]

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

159

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network [OSTI]

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

160

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

GaAsbased quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

162

Microsoft Word - MA HCM Workforce Plan.doc  

Broader source: Energy.gov (indexed) [DOE]

HUMAN CAPITAL HUMAN CAPITAL MANAGEMENT WORKFORCE PLAN September 2006 This page left blank intentionally. MA Workforce Plan - September 2006 TABLE OF CONTENTS Table of Contents ........................................................................................................................... i Executive Summary ...................................................................................................................... 1 1.0 Introduction.......................................................................................................................... 3 1.1 Mission and Business Vision .........................................................................................3 1.2 Human Capital Management Strategy ...........................................................................4

163

Engineering Ethics Richard A. Burgess, M.A.  

E-Print Network [OSTI]

Engineering Ethics Richard A. Burgess, M.A. Texas Tech T-STEM Center and Deputy Director, National Institute for Engineering Ethics Summer 2012 #12;STEM includes Engineering · No single profession impacts the Rubble: An Introduction to Post-Disaster Engineering and Ethics by Sara Pfatteicher #12;Constraint

Gelfond, Michael

164

MA 387 ' SOIU' Lm Exam 2 April 16, 1982  

E-Print Network [OSTI]

MA 387 ' SOIU' Lm Exam 2 April 16, 1982. Name. (10) l _ 'Calculate each of the following; a) ?{(a,b)la < 0 and b 1 2} t: Cola) b) u{(a,b)l[a,b] 5 (1,2)}. : .Cl, 9.).

165

Ma, Bonzongo, Gao, Dong and Gress QUARTERLY PROGRESS REPORT  

E-Print Network [OSTI]

Characterization and Leachability of Coal Combustion Residues in Florida Principal investigator: Lena Q. Ma of coal combustion residues (CCR) and assess their metal leachability. The specific objectives are: 1- Environmental soil chemistry (Professor) Affiliation: Soil and Water Science Department, UF, Gainesville, FL

Ma, Lena

166

Index of /~jbeckley/WD/MA 373/F14  

E-Print Network [OSTI]

... 14-Jan-2015 15:16, 418K. [ ], MA373 F14 Test 4-1.pdf, 14-Jan-2015 15:27, 330K. Apache/2.2.3 (Red Hat) Server at www.math.purdue.edu Port 80.

167

Will This #Hashtag Be Popular Tomorrow? Zongyang Ma  

E-Print Network [OSTI]

Will This #Hashtag Be Popular Tomorrow? Zongyang Ma zma4@e.ntu.edu.sg Aixin Sun axsun@ntu.edu.sg Gao Cong gaocong@ntu.edu.sg School of Computer Engineering Nanyang Technological University, Singapore this prediction problem as a classification problem and evaluate the effectiveness of the extracted features

Aixin, Sun

168

ON SOLAR NEUTRINO PROBLEM TIAN MA AND SHOUHONG WANG  

E-Print Network [OSTI]

ON SOLAR NEUTRINO PROBLEM TIAN MA AND SHOUHONG WANG Abstract. The current neutrino oscillation an alternative resolution to the solar neutrino loss problem. Contents 1. Introduction 1 2. Discrepancy of Solar, there are three flavors of neutrinos: the electron neutrino e, the tau neutrino and the mu neutrino µ. The solar

169

Glass, Brian 1 BRIAN DANIEL GLASS, M.A.  

E-Print Network [OSTI]

Glass, Brian 1 BRIAN DANIEL GLASS, M.A. University Department of Psychology, A8000 The University of Categorization and Decision Making, The University of Texas at Austin #12;Glass, Brian 2 Duties include: Programming, constructing, and running experiments, statistical analysis. JOURNAL PUBLICATIONS Glass, B. D

Maddox, W. Todd

170

Glass, Brian 1 BRIAN DANIEL GLASS, M.A.  

E-Print Network [OSTI]

Glass, Brian 1 BRIAN DANIEL GLASS, M.A. University Department of Psychology, A8000 The University Making, The University of Texas at Austin #12;Glass, Brian 2 Duties include: Designing and constructing, constructing, and running experiments, statistical analysis. JOURNAL PUBLICATIONS Glass, B. D., Chotibut, T

Maddox, W. Todd

171

Glass, Brian 1 BRIAN DANIEL GLASS, M.A.  

E-Print Network [OSTI]

Glass, Brian 1 BRIAN DANIEL GLASS, M.A. University Department of Psychology, A8000 The University of Texas at Austin Austin, TX 78712 (512) 232-2883 e-mail: glass@mail.utexas.edu EDUCATION 2006 ­ Cognitive include: Designing and constructing experiments, statistical #12;Glass, Brian 2 analysis, manuscript

Maddox, W. Todd

172

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

173

MA in Modern Languages The School of Languages and Literatures invites applications for its taught MA in Modern  

E-Print Network [OSTI]

MA in Modern Languages. With dedicated academic staff in its subject areas of French, German, Italian courses on cultural and literary theory, choosing their remaining four from a broad range of options Theory Introduction to Literary Theory Minor Thesis (30 credits) Optional Modules (Four of:) French

174

DOE - Office of Legacy Management -- Tufts College - MA 0-05  

Office of Legacy Management (LM)

Tufts College - MA 0-05 Tufts College - MA 0-05 FUSRAP Considered Sites Site: TUFTS COLLEGE ( MA.0-05 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Medford , Massachusetts MA.0-05-1 Evaluation Year: 1987 MA.0-05-1 Site Operations: Research and development using only small quantities of radioactive material. MA.0-05-1 Site Disposition: Eliminated - Potential for contamination considered remote based on limited quantities of material handled MA.0-05-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium MA.0-05-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP Also see Documents Related to TUFTS COLLEGE MA.0-05-1 - Aerospace Letter; Young to Wallo; Subject: Elimination

175

Coulomb excitation of 73Ga  

E-Print Network [OSTI]

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekstrm; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Krll; R. Krcken; U. Kster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

176

Charakterisierung und Prparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network [OSTI]

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere (more)

Ebbers, Andr

2003-01-01T23:59:59.000Z

177

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect (OSTI)

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

178

Town of Danvers, MA Smart Grid Project | Open Energy Information  

Open Energy Info (EERE)

Smart Grid Project Smart Grid Project Jump to: navigation, search Project Lead Town of Danvers, MA Country United States Headquarters Location Danvers, Massachusetts Recovery Act Funding $8,476,800.00 Total Project Value $16,953,600.00 Coverage Area Coverage Map: Town of Danvers, MA Smart Grid Project Coordinates 42.5750946°, -70.9300507° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[]}

179

EDeMa (Smart Grid Project) | Open Energy Information  

Open Energy Info (EERE)

EDeMa EDeMa Country Germany Headquarters Location Mülheim, Germany Coordinates 51.427074°, 6.886492° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":51.427074,"lon":6.886492,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

180

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

U.S. LNG Imports from Other Countries  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

182

U.S. LNG Imports from Egypt  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

183

U.S. LNG Imports from Malaysia  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

184

U.S. LNG Imports from Peru  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

185

U.S. LNG Imports from Trinidad/Tobago  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

186

U.S. LNG Imports from Algeria  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

187

U.S. LNG Imports from Nigeria  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

188

U.S. LNG Imports from Qatar  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

189

U.S. LNG Imports from Yemen  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

190

U.S. Total Exports  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

191

U.S. LNG Imports from Indonesia  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

192

U.S. LNG Imports from Canada  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

193

U.S. LNG Imports from Norway  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

194

U.S. LNG Imports from Equatorial Guinea  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

195

U.S. LNG Imports from Australia  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

196

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

197

DOE - Office of Legacy Management -- E B Badger - MA 0-01  

Office of Legacy Management (LM)

E B Badger - MA 0-01 E B Badger - MA 0-01 FUSRAP Considered Sites Site: E.B. Badger (MA.0-01 ) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: 75 Pitts Street , Boston , Massachusetts MA.0-01-1 Evaluation Year: 1987 MA.0-01-2 Site Operations: Construction contractor during the mid-1940s; constructed facility to refine pitchblende ore and produce feed materials at another location. MA.0-01-2 Site Disposition: Eliminated - No indication of radioactive materials handled at this site MA.0-01-2 Radioactive Materials Handled: No Primary Radioactive Materials Handled: None MA.0-01-2 Radiological Survey(s): No Site Status: Eliminated from further consideration under FUSRAP Also see Documents Related to E.B. Badger

198

E-Print Network 3.0 - ages 600-570 ma Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The former age signature is more... , zircons have 2850 Ma cores and 2730 Ma rims. Titanite ages are similar to those from zircon rims... and zircon using LA-ICP-MS. The oldest...

199

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

200

CSC 1051 M.A. Papalaskari, Villanova University CSC 1051 Data Structures and Algorithms I  

E-Print Network [OSTI]

CSC 1051 M.A. Papalaskari, Villanova University Repetition CSC 1051 ­ Data Structures.6 Interactive Programs · 5.1 Boolean Expressions · 5.2 The if Statement · 5.4 The while Statement CSC 1051 M.A CSC 1051 M.A. Papalaskari, Villanova University #12;Flow of Control The order of statement execution

Papalaskari, Mary-Angela

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
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201

CSC 1051 M.A. Papalaskari, Villanova University Data Representation and  

E-Print Network [OSTI]

CSC 1051 M.A. Papalaskari, Villanova University Data Representation and Applets CSC 1051 ­ Data conversions · Image representation · Java Applets CSC 1051 M.A. Papalaskari, Villanova University #12;Reverse CSC 1051 M.A. Papalaskari, Villanova University Review #12;Memory devices store data of all kinds 9278

Papalaskari, Mary-Angela

202

CSC 1051 M.A. Papalaskari, Villanova University CSC 1051 Data Structures and Algorithms I  

E-Print Network [OSTI]

CSC 1051 M.A. Papalaskari, Villanova University Repetition CSC 1051 ­ Data Structures 1051 M.A. Papalaskari, Villanova University statement 1 statement 2 statement 3 statement 4 boolean 1 statements: enable us to alter control flow CSC 1051 M.A. Papalaskari, Villanova University statement 1

Papalaskari, Mary-Angela

203

CSC 1051 M.A. Papalaskari, Villanova University CSC 1051 Data Structures and Algorithms I  

E-Print Network [OSTI]

CSC 1051 M.A. Papalaskari, Villanova University Repetition CSC 1051 ­ Data Structures 1051 M.A. Papalaskari, Villanova University statement 1 statement 2 statement 3 statement 4 boolean 1 does it take for the account balance to be double the original? CSC 1051 M.A. Papalaskari, Villanova

Papalaskari, Mary-Angela

204

MA47, a Fortran code for direct solution of indefinite sparse symmetric linear systems  

E-Print Network [OSTI]

-first search of the assembly tree ........................ 23 3.8 MA47M: calculate storage and operation countsRAL-95-001 MA47, a Fortran code for direct solution of indefinite sparse symmetric linear systems indefinite symmetric linear systems of equations. It is intended to complement the Harwell code MA27

Mihajlovic, Milan D.

205

Princeton Plasma Physics Lab - General Atomics (GA)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
206

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

207

Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

208

Fusion materials irradiations at MaRIE's fission fusion facility  

SciTech Connect (OSTI)

Los Alamos National Laboratory's proposed signature facility, MaRIE, will provide scientists and engineers with new capabilities for modeling, synthesizing, examining, and testing materials of the future that will enhance the USA's energy security and national security. In the area of fusion power, the development of new structural alloys with better tolerance to the harsh radiation environments expected in fusion reactors will lead to improved safety and lower operating costs. The Fission and Fusion Materials Facility (F{sup 3}), one of three pillars of the proposed MaRIE facility, will offer researchers unprecedented access to a neutron radiation environment so that the effects of radiation damage on materials can be measured in-situ, during irradiation. The calculated radiation damage conditions within the F{sup 3} match, in many respects, that of a fusion reactor first wall, making it well suited for testing fusion materials. Here we report in particular on two important characteristics of the radiation environment with relevancy to radiation damage: the primary knock-on atom spectrum and the impact of the pulse structure of the proton beam on temporal characteristics of the atomic displacement rate. With respect to both of these, analyses show the F{sup 3} has conditions that are consistent with those of a steady-state fusion reactor first wall.

Pitcher, Eric J [Los Alamos National Laboratory

2010-10-06T23:59:59.000Z

209

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

210

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

211

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

212

RECIPIENT:Hull Municipal Light Plant STATE: MA PROJECT TITLE:  

Broader source: Energy.gov (indexed) [DOE]

: : Page 1 01 :L RECIPIENT:Hull Municipal Light Plant STATE: MA PROJECT TITLE: Hull Offshore Wind Research and Development Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number 09EE0000326 DE-EE0000326 GFO-OO00326-001 0 Based on my review of the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the foUowing determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and demand studies), and dissemination (including, but not limited to, document mailings, publication, and distribution; and

213

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

214

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

215

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

216

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

217

Index of /academic/files/courses/past/2003fall/ma265/MatLab  

E-Print Network [OSTI]

Index of /academic/files/courses/past/2003fall/ma265/MatLab. [ICO], Name Last modified Size Description. [DIR], Parent Directory, -. [TXT], dotprod.

218

2.8-Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus...  

Open Energy Info (EERE)

Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus Mountains (Russia), Contemporaneous Granites, And Associated Ore Deposits Jump to: navigation, search OpenEI Reference...

219

E-Print Network 3.0 - alcon laboratories ma60 Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sample search results for: alcon laboratories ma60 Page: << < 1 2 3 4 5 > >> 1 Chemical Engineering Research Support 2007 Abitibi-Consolidated Inc. Summary: Agriculture &...

220

Model for Analysis of Energy Demand (MAED-2) | Open Energy Information  

Open Energy Info (EERE)

Analysis of Energy Demand (MAED-2) AgencyCompany Organization: International Atomic Energy Agency Sector: Energy Focus Area: Renewable Energy, Energy Efficiency Topics: Pathways...

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

MA511: PRACTICE TEST 2 Answer all questions. No calculators or ...  

E-Print Network [OSTI]

MA511: PRACTICE TEST 2. Answer all questions. No calculators or other electronic devices are allowed. For questions 1 to 3, you may write down the answers...

2014-11-02T23:59:59.000Z

222

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

223

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect (OSTI)

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

224

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

225

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90 misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

226

GaNInGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaNInGaN LED devices. While most studies focus on output saturation known as current droop from InGaN layer effects, we show an alike influence from p-type GaNs inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

227

Development of a Hydronic Rooftop Unit-HyPak-MA  

SciTech Connect (OSTI)

The majority of U.S. commercial floor space is cooled by rooftop HVAC units (RTUs). RTU popularity derives chiefly from their low initial cost and relative ease of service access without disturbing building occupants. Unfortunately, current RTUs are inherently inefficient due to a combination of characteristics that unnecessarily increase cooling loads and energy use. 36% percent of annual U.S. energy, and two-thirds of electricity, is consumed in and by buildings. Commercial buildings consume approximately 4.2 quads of energy each year at a cost of $230 billion per year, with HVAC equipment consuming 1.2 quads of electricity. More than half of all U.S. commercial floor space is cooled by packaged HVAC units, most of which are rooftop units (RTUs). Inefficient RTUs create an estimated 3.5% of U.S. CO{sub 2} emissions, thus contributing significantly to global warming5. Also, RTUs often fail to maintain adequate ventilation air and air filtration, reducing indoor air quality. This is the second HyPak project to be supported by DOE through NETL. The prior project, referred to as HyPak-1 in this report, had two rounds of prototype fabrication and testing as well as computer modeling and market research. The HyPak-1 prototypes demonstrated the high performance capabilities of the HyPak concept, but made it clear that further development was required to reduce heat exchanger cost and improve system reliability before HyPak commercialization can commence. The HyPak-1 prototypes were limited to about 25% ventilation air fraction, limiting performance and marketability. The current project is intended to develop a 'mixed-air' product that is capable of full 0-100% modulation in ventilation air fraction, hence it was referred to as HyPak-MA in the proposal. (For simplicity, the -MA has been dropped when referencing the current project.) The objective of the HyPak Project is to design, develop and test a hydronic RTU that provides a quantum improvement over conventional RTU performance. Our proposal targeted 60% and 50% reduction in electrical energy use by the HyPak RTU for dry and humid climates, respectively, when compared with a conventional unit, and reduction in peak energy consumption of 50% and 33% respectively. In addition to performance targets, our goal is to develop a production-ready design with durability, reliability and maintainability similar to air-cooled packaged equipment, and that can be commercialized immediately following the conclusion of this project.

Eric Lee; Mark Berman

2009-11-14T23:59:59.000Z

228

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

229

The pottery from a fifth century B.C. shipwreck at Ma'agan Michael, Israel  

E-Print Network [OSTI]

Between 1988 and 1990 a shipwreck tentatively dated to the 5th century B.C. was excavated off the coast of Israel at Ma'agan Michael by Dr. Elisha Linder of the Center for Maritime Studies. This study presents one category of material from the Ma...

Lyon, Jerry Dean

2012-06-07T23:59:59.000Z

230

MaJIC: a Matlab Just-In-time Compiler ? George Almasi and David A. Padua  

E-Print Network [OSTI]

MaJIC: a Matlab Just-In-time Compiler ? George Almasi and David A. Padua galmasi experience with MaJIC, a just-in- time compiler for MATLAB. In the recent past, several compiler projects claimed large performance improvements when processing MATLAB code. Most of these projects are static

Padua, David

231

M.A. in Political Science Degree Requirements Department of Political Science, Florida Atlantic University  

E-Print Network [OSTI]

M.A. in Political Science Degree Requirements Department of Political Science, Florida Atlantic University Students pursuing a Master of Arts Degree in Political Science are required to meet the following as an undergraduate. 4. Students entering the M.A. program who did not major in political science as undergraduates

Fernandez, Eduardo

232

Photo 2008 Michigan State University Board of Trustees M.A. Advertising  

E-Print Network [OSTI]

Photo © 2008 Michigan State University Board of Trustees M.A. Advertising M.A. Public Relations GRADUATE HANDBOOK Department of Advertising + Public Relations MICHIGAN STATE UNIVERSITY #12;2 Revised July 2013 Table of Contents Program overview, 3 Two degrees: Advertising or PR, 3 Program structure, 4

233

Institutions and Cross-border Mergers and Acquisitions (M&A) Value Creation  

E-Print Network [OSTI]

institutions on cross-border M&A value creation. I further examine the moderating effects of host country political institutions on the relationship between host country regulatory institutions and cross-border M&A value creation. Moreover, I investigate...

Zhu, Hong

2012-02-14T23:59:59.000Z

234

U-178: VMware vMA Library Loading Error Lets Local Users Gain...  

Broader source: Energy.gov (indexed) [DOE]

A vulnerability was reported in VMware vMA PLATFORM: Version(s): vMA 4.0, 4.1, 5 patch 1 (5.0.0.1) ABSTRACT: A local user can obtain elevated privileges on the target...

235

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network [OSTI]

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

236

Market Acceptance of Advanced Automotive Technologies Model (MA3T) Consumer  

Open Energy Info (EERE)

Market Acceptance of Advanced Automotive Technologies Model (MA3T) Consumer Market Acceptance of Advanced Automotive Technologies Model (MA3T) Consumer Choice Model Jump to: navigation, search Tool Summary Name: Market Acceptance of Advanced Automotive Technologies Model (MA3T) Consumer Choice Model Agency/Company /Organization: Oak Ridge National Laboratory OpenEI Keyword(s): EERE tool, Market Acceptance of Advanced Automotive Technologies Model (MA3T) Consumer Choice Model, MA3T Project U.S. consumer demand for plug-in hybrid electric vehicles (PHEV) in competition among various light-duty vehicle technologies for hundreds of market segments based and multiple regions. For more information, contact the ORNL Energy and Transportation Science Division at http://www.ornl.gov/sci/ees/etsd/contactus.shtml References Retrieved from

237

VIDEO SEMINAR of Ma Jun's 6/17/02 presentation: China's Water Resources:  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

VIDEO SEMINAR of Ma Jun's 6/17/02 presentation: China's Water Resources: VIDEO SEMINAR of Ma Jun's 6/17/02 presentation: China's Water Resources: Crisis and Opportunity Speaker(s): Ma Jun Date: July 3, 2002 - 12:00pm Location: 90-3122 The rivers in China, and the hundreds of millions who depend on them, are in trouble. A water crisis looms large in most parts of China. In his book, China Water Crisis, Ma Jun traces 4,000 years of the history of China's watersheds, and their mis/management. Armed with scientific data and compelling stories, Ma reveals the causes and character of the looming ecological disaster. His book has been quoted in The Economist and many western media. Limited water resources pose a major threat to social and economic development in the 21st century. Three Gorges Dam and redirecting water from south to north occupy the main focus of the efforts to increase

238

Biochemical characterization of derivatives of MA-T12D11, a TAFI neutralizing antibody  

E-Print Network [OSTI]

106ka(1/Ms) scFvFabMAT12D11 0 1 2 3 4 5 6 7 8 9 0 10 20 30 40 50 60 70 80 90 100 110 MA T12D11 Fab T12D11 scFvT12D11 Molar excess of MA/Fab/scFv % i n h i b i t i o n o f T A F I a a c t i v i t y Table 1: Binding parameters (ka, kd and KA) of MA...-T12D11 and its derivatives for binding to TAFI The results represent mean ? SD (n a1 3) Figure 4: % inhibition of TAFIa activity by MA/Fab/scFv TAFI was activated with T/TM in presence of MA, Fab or scFv. The results represent mean ? SD (n a2 3...

Develter, J.; Declerck, P. J.; Gils, A.

2006-10-27T23:59:59.000Z

239

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

240

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect (OSTI)

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNLs Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNLs Electronic Records & Information Capture Architecture (ERICA) database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document.

Rathbone, Bruce A.

2009-08-28T23:59:59.000Z

242

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

243

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

244

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

245

GaN-based micro-LED arrays on flexible substrates for optical cochlear implants  

Science Journals Connector (OSTI)

Currently available cochlear implants are based on electrical stimulation of the spiral ganglion neurons. Optical stimulation with arrays of micro-sized light-emitting diodes (LEDs) promises to increase the number of distinguishable frequencies. Here, the development of a flexible GaN-based micro-LED array as an optical cochlear implant is reported for application in a mouse model. The fabrication of 15m thin and highly flexible devices is enabled by a laser-based layer transfer process of the GaN-LEDs from sapphire to a polyimide-on-silicon carrier wafer. The fabricated 50?50m2 LEDs are contacted via conducting paths on both p- and n-sides of the LEDs. Up to three separate channels could be addressed. The probes, composed of a linear array of the said LEDs bonded to the flexible polyimide substrate, are peeled off the carrier wafer and attached to flexible printed circuit boards. Probes with four LEDs and a width of 230m are successfully implanted in the mouse cochlea both in vitro and in vivo. The LEDs emit 60W at 1mA after peel-off, corresponding to a radiant emittance of 6mWmm?2.

Christian Goler; Colin Bierbrauer; Rdiger Moser; Michael Kunzer; Katarzyna Holc; Wilfried Pletschen; Klaus Khler; Joachim Wagner; Michael Schwaerzle; Patrick Ruther; Oliver Paul; Jakob Neef; Daniel Keppeler; Gerhard Hoch; Tobias Moser; Ulrich T Schwarz

2014-01-01T23:59:59.000Z

246

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

247

FRACTIONAL SKEW MONOID RINGS P. ARA, M.A. GONZ'ALEZ-BARROSO, K.R. GOODEARL, AND E. PARDO  

E-Print Network [OSTI]

FRACTIONAL SKEW MONOID RINGS P. ARA, M.A. GONZ'ALEZ-BARROSO #12; 2 P. ARA, M.A. GONZ'ALEZ-BARROSO, K.R. GOODEARL, AND E. PARDO In this paper

Bigelow, Stephen

248

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect (OSTI)

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at the U.S. Department of Energy (DOE) Hanford site. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with requirements of 10 CFR 835, the DOE Laboratory Accreditation Program, the DOE Richland Operations Office, DOE Office of River Protection, DOE Pacific Northwest Office of Science, and Hanfords DOE contractors. The dosimetry system is operated by the Pacific Northwest National Laboratory (PNNL) Hanford External Dosimetry Program which provides dosimetry services to PNNL and all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNLs Electronic Records & Information Capture Architecture database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2.

Rathbone, Bruce A.

2011-04-04T23:59:59.000Z

249

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect (OSTI)

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at Hanford. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with 10 CFR 835, DOELAP, DOE-RL, ORP, PNSO, and Hanford contractor requirements. The dosimetry system is operated by PNNLs Hanford External Dosimetry Program (HEDP) which provides dosimetry services to all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee (HPDAC) which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. Rev. 0 marks the first revision to be released through PNNLs Electronic Records & Information Capture Architecture (ERICA) database. Revision numbers that are whole numbers reflect major revisions typically involving changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Revision Log: Rev. 0 (2/25/2005) Major revision and expansion. Rev. 0.1 (3/12/2007) Minor revision. Updated Chapters 5, 6 and 9 to reflect change in default ring calibration factor used in HEDP dose calculation software. Factor changed from 1.5 to 2.0 beginning January 1, 2007. Pages on which changes were made are as follows: 5.23, 5.69, 5.78, 5.80, 5.82, 6.3, 6.5, 6.29, 9.2.

Rathbone, Bruce A.

2007-03-12T23:59:59.000Z

250

Hanford External Dosimetry Technical Basis Manual PNL-MA-842  

SciTech Connect (OSTI)

The Hanford External Dosimetry Technical Basis Manual PNL-MA-842 documents the design and implementation of the external dosimetry system used at the U.S. Department of Energy (DOE) Hanford site. The manual describes the dosimeter design, processing protocols, dose calculation methodology, radiation fields encountered, dosimeter response characteristics, limitations of dosimeter design under field conditions, and makes recommendations for effective use of the dosimeters in the field. The manual describes the technical basis for the dosimetry system in a manner intended to help ensure defensibility of the dose of record at Hanford and to demonstrate compliance with requirements of 10 CFR 835, the DOE Laboratory Accreditation Program, the DOE Richland Operations Office, DOE Office of River Protection, DOE Pacific Northwest Office of Science, and Hanfords DOE contractors. The dosimetry system is operated by the Pacific Northwest National Laboratory (PNNL) Hanford External Dosimetry Program which provides dosimetry services to PNNL and all Hanford contractors. The primary users of this manual are DOE and DOE contractors at Hanford using the dosimetry services of PNNL. Development and maintenance of this manual is funded directly by DOE and DOE contractors. Its contents have been reviewed and approved by DOE and DOE contractors at Hanford through the Hanford Personnel Dosimetry Advisory Committee which is chartered and chaired by DOE-RL and serves as means of coordinating dosimetry practices across contractors at Hanford. This manual was established in 1996. Since its inception, it has been revised many times and maintained by PNNL as a controlled document with controlled distribution. The first revision to be released through PNNLs Electronic Records & Information Capture Architecture database was designated Revision 0. Revision numbers that are whole numbers reflect major revisions typically involving significant changes to all chapters in the document. Revision numbers that include a decimal fraction reflect minor revisions, usually restricted to selected chapters or selected pages in the document. Maintenance and distribution of controlled hard copies of the manual by PNNL was discontinued beginning with Revision 0.2.

Rathbone, Bruce A.

2010-04-01T23:59:59.000Z

251

GA-AL-SC | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

252

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

253

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

254

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

255

All undergraduate/Bachelor degrees BSc/BA/BEng/MEng 13,000 Childhood Studies MA 12,500  

E-Print Network [OSTI]

All undergraduate/Bachelor degrees BSc/BA/BEng/MEng £13,000 Childhood Studies MA £12,500 Developmental and Therapeutic Play MA/PGDip/PGCert £12,500 Health Care Management MSc £13,000 Public Health/BA/BEng/MEng £11,750 Ancient Egyptian Culture MA £12,500 Ancient History & Classical Culture MA £12,500 Ancient

Harman, Neal.A.

256

www.math.tu-berlin.de/mathe-ini Di, 10.4. 11:30 MA 844 Frhstck  

E-Print Network [OSTI]

www.math.tu-berlin.de/mathe-ini Di, 10.4. 11:30 MA 844 Frühstück Im Mathetreff gibt es gratis Kaffee und Brötchen für alle Erstsemester (Mathe, WiMa, TechMa). Studis, die im Café oder der Ini aktiv sind, beantworten deine Fragen. Do, 12.4. 18:00 MA 847 Erstes Iniplenum Die Ini trifft sich ungefähr

Nabben, Reinhard

257

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

258

Room-temperature operation of an InGaAsP double-heterostructure laser emitting at 1. 55. mu. m on a Si substrate  

SciTech Connect (OSTI)

The room-temperature operations of an InGaAsP double-heterostructure (DH) laser emitting at 1.55 {mu}m on a Si substrate is reported. A pulsed threshold current as low as 46 mA has been measured for a ridge waveguide laser with a 4 {mu}m strip width and a 200 {mu}m cavity length. This successful laser operation is due to the high crystalline quality of the DH structure with full width at half maximum of x-ray rocking curves as low as 110 arcsec grown on a Si substrate by the organometallic vapor phase epitaxy/vapor mixing epitaxy hybrid method. A correlation between the optical property of an InGaAsP DH and its crystalline quality is also discussed.

Sugo, M.; Mori, H.; Tachikawa, M.; Itoh, Y.; Yamamoto, M. (NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01 (Japan))

1990-08-06T23:59:59.000Z

259

CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} and CdTe PV solar cells  

SciTech Connect (OSTI)

Higher indium proportion in the first precursor was employed to eliminate pits in CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films prepared by two Se-vapor selenizations of metallic precursors. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films had large, faceted grains, and a near-optimum composition Cu:In:Ga:Se 24.25:22.21:4.40:49.14. Ga incorporated using a Cu-Ga(22 at. {percent}) alloy target was enhanced by optimizing the time-temperature profiles of selenizations. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} solar cells gave {ital V}{sub oc} of 451.8 mV, {ital J}{sub sc} of 34.5 mA, FF of 57.87{percent}, total area efficiency of 9.02{percent}. CdTe thin films were prepared by heat treatment of magnetron-sputtered elemental Cd/Te stacks. Formation of extraneous oxide phases was avoided by optimizing ambients, temperature, and CdCl{sub 2} treatment. CdTe solar cells gave maximum {ital V}{sub oc} of {approximately}600 mV, {ital J}{sub sc} of {approximately}5 mA.cm{sup {minus}2}, very low FF and efficiency probably due to blocking layer or junction away from CdS{backslash}CdTe interface. {copyright} {ital 1996 American Institute of Physics.}

Dhere, N.G. [Florida Solar Energy Center, 300 State Rd 401, Cape Canaveral, Florida 32920-4099 (United States)

1996-01-01T23:59:59.000Z

260

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


261

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmauntersttzter Molekularstrahlepitaxie (MBE). Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, und (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

262

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (15) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

263

Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes  

SciTech Connect (OSTI)

Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs.

Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wu, Kui; Sun, Bo; Zhang, Yonghui; Chen, Yu; Huo, Ziqiang; Hu, Qiang; Wang, Junxi; Zeng, Yiping; Li, Jinmin [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China); Lan, Ding [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080 (China)

2014-06-15T23:59:59.000Z

264

2.8-Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus Mountains  

Open Energy Info (EERE)

2.8-Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus Mountains 2.8-Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus Mountains (Russia), Contemporaneous Granites, And Associated Ore Deposits Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Journal Article: 2.8-Ma Ash-Flow Caldera At Chegem River In The Northern Caucasus Mountains (Russia), Contemporaneous Granites, And Associated Ore Deposits Details Activities (0) Areas (0) Regions (0) Abstract: Diverse latest Pliocene volcanic and plutonic rocks in the north-central Caucasus Mountains of southern Russia are newly interpreted as components of a large caldera system that erupted a compositionally zoned rhyolite-dacite ash-flow sheet at 2.83 ± 0.02 Ma (sanidine and biotite 40Ar/39Ar). Despite its location within a cratonic collision zone, the Chegem system is structurally and petrologically similar to typical

265

Telecommunications Concentration: Grady College MA Non-Thesis Program Planning Form  

E-Print Network [OSTI]

Telecommunications Concentration: Grady College MA Non-Thesis Program Planning Form Student Methodology in Mass Communication 3. JRMC 8025 ( ) Mass Media Law OR JRMC 8120 ( ) Telecommunications Policy in Media Industries JRMC 8200 ( ) Media Management JRMC 8210 ( ) Telecommunications Policy JRMC 8220

Arnold, Jonathan

266

Telecommunications Concentration: Grady College MA Non-Thesis Program Planning Form  

E-Print Network [OSTI]

Telecommunications Concentration: Grady College MA Non-Thesis Program Planning Form Student JRMC 8210 ( ) Telecommunications Policy JRMC 8220 ( ) Telecommunications Programming and Criticism JRMC 8230 ( ) Emerging Telecommunications Technologies JRMC 8240 ( ) Special Topics in Telecommunications

Arnold, Jonathan

267

University Timetabling through Conceptual Jonathan Lee,1,* Shang-Pin Ma,1,  

E-Print Network [OSTI]

University Timetabling through Conceptual Modeling Jonathan Lee,1,* Shang-Pin Ma,1, Lien Fu Lai,2 system. Expertise helps in reducing the search space and in fitting the solution to the context

Lee, Jonathan

268

E-Print Network 3.0 - agente compatibilizante pe-g-ma Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

pe-g-ma Page: << < 1 2 3 4 5 > >> 1 Creep Analysis of Bamboo High-Density Polyethylene Composites: Effect of Interfacial Treatment and Fiber Summary: , the use of maleic...

269

Optimization models in finance Ma 450 Darinka Dentcheva Fall 2012 darinka.dentcheva@stevens.edu  

E-Print Network [OSTI]

Optimization models in finance Ma 450 Darinka Dentcheva Fall 2012 darinka and dynamic optimization problems occurring in finance. We shall discuss linear and non-linear optimization models of finance, dynamic (se- quential) optimization, optimization under uncertainty, mathematical

Dentcheva, Darinka

270

E-Print Network 3.0 - alloy-ma-956 Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

<< < 1 2 > >> 1 UPDATE ON THE STATUS OF ODS ALLOYS FOR FOSSIL ENERGY APPLICATIONS I.G. Wright and B.A. Pint Summary: h cycles), starting at 1 to 2kh for ODS alloys MA956 and...

271

MA092 Geometria plana e analitica Comprimento da circunfer^encia -Area de superficies planas  

E-Print Network [OSTI]

MA092 ­ Geometria plana e anal´itica Comprimento da circunfer^encia - ´Area de superf´icies planas uma volta: 2R = D 61, 5 cm Dist^ancia total: 10.000.000 cm N´umero de voltas: 10.000.000/(61, 5) 51 - IMECC)MA092 ­ Geometria plana e anal´itica Agosto de 2013 5 / 22 ´Areas Ret^angulo ´Area AR = b · h

Gomes, Francisco A. M.

272

MA FAshiON bUsiNEss MA FAshiON MArKETiNg ANd cOMMUNicATiON  

E-Print Network [OSTI]

and South Korea. jhy1492@naver.com Image: Tesco, Retail Fashion Brand. By: Hyeyoun Jun #12;yU li (AMy) MA, and the influence it has on fashion brands and the future of this technology. psk_sawa@hotmail.com Image: 3-D Transform Themselves in the Thai Fashion Market, by creating their Own Brand. My project researches new

Evans, Paul

273

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect (OSTI)

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

274

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

275

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

276

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

277

Implantation of carbon in GaAs  

SciTech Connect (OSTI)

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

278

O?[]O? nuclear ?-decay of ?Ga  

E-Print Network [OSTI]

The branching ratio for the ?-Decay of ?Ga to the first excited O? state in ?Zn has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

279

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16 from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

280

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect (OSTI)

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Emploi du temps Licence de Mathmatiques semestre 6 MA= parcours maths approfondies M= parcours maths MI= parcours math-info ( groupe C en LI2)  

E-Print Network [OSTI]

M= parcours maths MI= parcours math-info ( groupe C en LI2) 08h00-09h30 09h45-11h15 11h30-13h00 13h15-14h45 15h00-16h30 16h45-18h15 lundi MA MA M M MI MI mardi MA Anglais MA M TD Histoire des Maths M 3.2 M MI Anglais MI mercredi MA TD Variable Complexe M 3.2 MA M M MI MI jeudi MA MA M M MI MI

Berger, Clemens

282

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

283

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network [OSTI]

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

284

Maayamma Nannu Ragam: Nata Kuranji {28th Mela Janyam}  

E-Print Network [OSTI]

AnandA AnandA ambA (svara) mA ma ma ga sa *ni *dha *ni sa ri ga mA ma ma ga ma ni dha mA ma ma , ni dha ni sA* ri* ga* mA* ma* ga* ma* ri* sA* ni sa* sA* ni dha ma ma , ga sa *nI *dha *ni sa *dha *dha *pa *dha/06/syama-sastry-kriti-mayamma- nannu-raga.html) O My ("mA") Mother ("ammA") ("mAyammA")! O Mother ("amm

Kalyanaraman, Shivkumar

285

U-178: VMware vMA Library Loading Error Lets Local Users Gain Elevated  

Broader source: Energy.gov (indexed) [DOE]

8: VMware vMA Library Loading Error Lets Local Users Gain 8: VMware vMA Library Loading Error Lets Local Users Gain Elevated Privileges U-178: VMware vMA Library Loading Error Lets Local Users Gain Elevated Privileges May 29, 2012 - 7:00am Addthis PROBLEM: A vulnerability was reported in VMware vMA PLATFORM: Version(s): vMA 4.0, 4.1, 5 patch 1 (5.0.0.1) ABSTRACT: A local user can obtain elevated privileges on the target system. Reference Links: SecurityTracker Alert ID: 1027099 CVE-2012-2752 Vendor Advisory IMPACT ASSESSMENT: High Discussion: A local user can exploit a library loading error to cause arbitrary code to be executed on the target system with elevated privileges. Impact: Privilege escalation Solution: The vendor has issued a fix (vSphere Management Assistant 5.0 Patch 2 (5.0.0.2)). Addthis Related Articles T-591: VMware vmrun Utility Lets Local Users Gain Elevated Privileges

286

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

287

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

288

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network [OSTI]

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

289

Kohlenstoffhaltige ternre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternren Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner drften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

290

Zeolitization Of Intracaldera Sediments And Rhyolitic Rocks In The 1.25 Ma  

Open Energy Info (EERE)

Zeolitization Of Intracaldera Sediments And Rhyolitic Rocks In The 1.25 Ma Zeolitization Of Intracaldera Sediments And Rhyolitic Rocks In The 1.25 Ma Lake Of Valles Caldera, New Mexico, Usa Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Journal Article: Zeolitization Of Intracaldera Sediments And Rhyolitic Rocks In The 1.25 Ma Lake Of Valles Caldera, New Mexico, USA Details Activities (0) Areas (0) Regions (0) Abstract: Quantitative X-ray diffraction analysis of about 80 rhyolite and associated lacustrine rocks has characterized previously unrecognized zeolitic alteration throughout the Valles caldera resurgent dome. The alteration assemblage consists primarily of smectite-clinoptilolite-mordenite-silica, which replaces groundmass and fills voids, especially in the tuffs and lacustrine rocks. Original rock textures are routinely preserved. Mineralization typically extends to

291

U.S. DEPARTMENT OF ENERGY EERE PROJECT MA.i\IAGE\tiE~TCE~TER  

Broader source: Energy.gov (indexed) [DOE]

MA.i\IAGE\tiE~TCE~TER MA.i\IAGE\tiE~TCE~TER NEPA DETERMINATION Page 1 of2 RECIPIENT:Brayton Energy STATE: MA PROJECT TITLE: High-Efficiency Low-Cost Solar Receiver for use in a Supercritical C02 Recompression Cycle Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA-0000595 DE-EE0005799 GF0-0005799-{)01 G05799 Based on my review of the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the foUowing determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering, analysis, and dissemination Information gathering (including, 'but not limited to, literature surveys, inventories, site vrsits, and audits}, data analysis (including, but not limited to, computer modeling}, document preparation

292

EDeMa (Smart Grid Project) (Krefeld, Germany) | Open Energy Information  

Open Energy Info (EERE)

EDeMa (Smart Grid Project) (Krefeld, Germany) EDeMa (Smart Grid Project) (Krefeld, Germany) Jump to: navigation, search Project Name EDeMa Country Germany Headquarters Location Krefeld, Germany Coordinates 50.652943°, 6.339111° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":50.652943,"lon":6.339111,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

293

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect (OSTI)

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

294

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

295

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect (OSTI)

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

296

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

297

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

298

MA092 Geometria plana e analitica Comprimento da circunfer^encia -Area do circulo  

E-Print Network [OSTI]

MA092 ­ Geometria plana e anal´itica Comprimento da circunfer^encia - ´Area do c´irculo Francisco A) 51.758 voltas Francisco A. M. Gomes (UNICAMP - IMECC)MA092 ­ Geometria plana e anal´itica Setembro de´itica Setembro de 2014 5 / 14 ´Area do c´irculo C´irculo ´Area A ´area de um c´irculo de raio R ´e dada por AC

Gomes, Francisco A. M.

299

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

300

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network [OSTI]

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

302

P-type doping of GaN  

SciTech Connect (OSTI)

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

303

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN FranzKeldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

304

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect (OSTI)

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

305

Vacancy-Induced 22 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 22 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

306

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Nel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

307

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect (OSTI)

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

308

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

309

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

310

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

311

Exergy Analysis of Incremental Sheet Forming M.A. Dittrich1  

E-Print Network [OSTI]

Exergy Analysis of Incremental Sheet Forming M.A. Dittrich1 , T.G. Gutowski1 , J. Cao2 , J.T. Roth3 studied so far. Using the concept of exergy analysis, two ISF technologies, namely single sided and double. A second exergy analysis is carried out with the purpose of examining the environmental impact of different

Gutowski, Timothy

312

SoMaS Employability Strategy The School of Mathematics and Statistics will  

E-Print Network [OSTI]

SoMaS Employability Strategy The School of Mathematics and Statistics will: 10. Develop for the School's degrees with Employment Experience Our success will be measured by: · An increase of students switching to degrees with Employment Experience 11. enable students to gain skills through

Martin, Stephen John

313

LARGE DEXTRAL OFFSET ACROSS OWENS VALLEY, CALIFORNIA FROM 148 MA TO 1872 A.D.  

E-Print Network [OSTI]

Lake (Fig. 2) along a branch of the Owens Valley fault zone, and is well dis- played just west1 LARGE DEXTRAL OFFSET ACROSS OWENS VALLEY, CALIFORNIA FROM 148 MA TO 1872 A.D. Allen F. Glazner1 (estimated moment magnitude ~7.5) occurred in Owens Valley. Ground breakage extended from Big Pine to Owens

Lee, Jeff

314

Formblatt LM Ma Informatik Version Oktober 2012 Zuordnung von Lehrmodulen im Masterstudium Informatik  

E-Print Network [OSTI]

Formblatt LM Ma Informatik Version Oktober 2012 Zuordnung von Lehrmodulen im Masterstudium Komplexität Modul-Nr. Name (Kurzform) KP Note PR Programmierung LM 1 VI Verteilte Informationssysteme LM 2 PV Parallele und Vert. Systemarchitekturen LM 3 OC Organic Computing LM 4 IE Intelligente eingebettete Systeme

Lübeck, Universität zu

315

Formblatt LM Ma Informatik Version Mai 2010 Zuordnung von Lehrmodulen im Masterstudium Informatik  

E-Print Network [OSTI]

Formblatt LM Ma Informatik Version Mai 2010 Zuordnung von Lehrmodulen im Masterstudium Informatik-Nr.^+ KP LZF Note PR Programmierung LM 1 VI Verteilte Informationssysteme LM 2 PV Parallele und Vert. Systemarchitekturen LM 3 OC Organic Computing LM 4 IE Intelligente eingebettete Systeme Summe KP SB Signal- und

Lübeck, Universität zu

316

Trends in Multidisciplinary Engineering Education, MA&O 2006 Trends in Multidisciplinary Engineering  

E-Print Network [OSTI]

of the context in which engineering is practiced Economics (including business practice) History The environmentTrends in Multidisciplinary Engineering Education, MA&O 2006 Page 1 Trends in Multidisciplinary Engineering Education: 2006 and Beyond Awards Luncheon Olivier de Weck and Karen WillcoxOlivier de Weck

Peraire, Jaime

317

PHILOSOPHY (M.A. & Ph.D.) Executive Officer: Professor Iakovos Vasiliou  

E-Print Network [OSTI]

194 PHILOSOPHY (M.A. & Ph.D.) Executive Officer: Professor Iakovos Vasiliou The Graduate Center 365 Fifth Avenue New York, NY 10016 Email: Philosophy@gc.cuny.edu http://web.gc.cuny.edu/Philosophy/ facult Martin Tamny n Iakovos Vasiliou n Mary Bittman Wiseman the PrOgram The Graduate Program in Philosophy

Dennehy, John

318

M.T.Nair February 15 (2013, 2014) MA-5340: Measure and Integration  

E-Print Network [OSTI]

M.T.Nair February 15 (2013, 2014) MA-5340: Measure and Integration Assignment Sheet - II In the following, (X, A) is a measurable space. 1. Suppose (X, A) is a measurable space and X0 A. Then show measurable - Why? 4. Let (X, A, µ) is a measure space. Prove that, if is a non-negative real number, then E

Nair, M.Thamban

319

Pressure calibrations for cell filling Harvard-Smithsonian Center for Astrophysics, Cambridge, MA 02138  

E-Print Network [OSTI]

, Cambridge, MA 02138 (1/20/00) Purpose: To describe procedures useful in filling various gas sample cells to 77 K, and thus eas- ily condense xenon into the cell. Practically, this means that all the gas the gases in the cell are valid only for a binary gas mixture where one of the gases can be condensed (i

Walsworth, Ronald L.

320

MA et al.: SKETCH RETRIEVAL VIA STROKE FEATURES 1 Sketch Retrieval via Dense Stroke Features  

E-Print Network [OSTI]

MA et al.: SKETCH RETRIEVAL VIA STROKE FEATURES 1 Sketch Retrieval via Dense Stroke Features Chao search method. In this paper, we propose a representation scheme which takes sketch strokes into account with local features, thereby facilitat- ing efficient retrieval with codebooks. Stroke features are detected

Yang, Ming-Hsuan

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

M. M. Oppenheim Y. S. Dimant, Boston University, Center for Space Physics, Boston, MA, 02215, USA  

E-Print Network [OSTI]

M. M. Oppenheim Y. S. Dimant, Boston University, Center for Space Physics, Boston, MA, 02215, USA Corresponding author Email addresses: meerso@bu.edu (M. M. Oppenheim), dimant@bu.edu (Y. S. Dimant). Preprint and Oppenheim. This paper begins with a general discussion of E-region irregularity observa- tions, theory

Oppenheim, Meers

322

Nanocrystals for Solar Energy MaRIE--A Facility in the Making  

E-Print Network [OSTI]

Nanocrystals for Solar Energy MaRIE--A Facility in the Making At the Chemical Movies 1663 LOS-secret laboratory was the mailing address--P. O. Box 1663, Santa Fe, New Mexico.That box number, still part of our Mexico, Los Alamos National Laboratory was founded in 1943 to build the first atomic bomb. It remains

323

The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD  

E-Print Network [OSTI]

Probability and Statistics · STAT405 Statistical Computing and Graphics · STAT410Introduction to Statistical1 Statistics The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD Course work in statistics acquaints students with the role played in the modern world by probabilistic

Richards-Kortum, Rebecca

324

The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD  

E-Print Network [OSTI]

Introduction to Engineering Computation · STAT 310 Probability and Statistics · STAT 410 Introduction246 Statistics The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD Course work in statistics acquaints students with the role played in the modern world by probabilistic

Richards-Kortum, Rebecca

325

The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD  

E-Print Network [OSTI]

Introduction to Engineering Computation · STAT 310 Probability and Statistics · STAT 410 Introduction253 Statistics The George R. Brown School of Engineering Degrees Offered: BA, MStat, MA, PhD Course work in statistics acquaints students with the role played in the modern world by probabilistic

Richards-Kortum, Rebecca

326

POLITICAL SCIeNCe (M.A. & Ph.D.) Executive Officer: Professor Joe Rollins  

E-Print Network [OSTI]

206 POLITICAL SCIeNCe (M.A. & Ph.D.) Executive Officer: Professor Joe Rollins The Graduate Center 365 Fifth Avenue New York, NY 10016 Email: PoliticalScience@gc.cuny.edu http://www.gc.cuny.edu/Political Richard Wolin n Susan Woodward n Ming Xia n Donald Zagoria n Burton Zwiebach the PrOgram Political Science

Dennehy, John

327

Health & Medical Journalism Concentration: Grady College MA Non-Thesis Program Planning Form  

E-Print Network [OSTI]

Health & Medical Journalism Concentration: Grady College MA Non-Thesis Program Planning Form Methodology in Mass Communication 3. JRMC 7355 ( ) Health and Medical Journalism 4. JRMC 7356 ( ) Advanced Health and Medical Journalism Co-requisite for Concentration ­ for students with limited undergraduate

Arnold, Jonathan

328

Bibliography Anderson, J.R. (1983). Architecture of cognition. Cambridge, MA: Harvard  

E-Print Network [OSTI]

1 Bibliography Anderson, J.R. (1983). Architecture of cognition. Cambridge, MA: Harvard University and Computer Representations. Cambridge: Cambridge University Press. #12;2 Coelho, S. M., and Séré, M. (1998. diSessa, A. (2000). Changing minds: Computers, learning and literacy. MIT Press. Fauconnier, G. and M

Maryland at College Park, University of

329

John R. Harrison, Ph.D. 1978 B.A. Salem State College, Salem, MA Biology  

E-Print Network [OSTI]

1994 Stimulation of prostaglandin E2 production by interleukin-1 and transforming growth factorJohn R. Harrison, Ph.D. Education 1978 B.A. Salem State College, Salem, MA Biology 1986 Ph.D of recombinant transforming growth factor and interleukin-1 on DNA synthesis, collagen #12;synthesis, procollagen

Oliver, Douglas L.

330

Expansion of human pluripotent stem cells with synthetic oolymer PMVE-alt-MA  

E-Print Network [OSTI]

hESC hPSC ICM iPSC MEF MEF-CM PAA PBS PMVE-alt-MA qPCR RGD15 . Linear polyacrylic acid (pAA) chains were modified withpeptide-functionalized linear pAA chains were mixed and

Chu, Wai Keung

2011-01-01T23:59:59.000Z

331

Heliospheric current sheet inclinations at Venus and Earth G. Ma, K. Marubashi, and T. Maruyama  

E-Print Network [OSTI]

that the heliospheric current sheet inclination tends to be maintained during propagation of the solar wind from 0.72 AUHeliospheric current sheet inclinations at Venus and Earth G. Ma, K. Marubashi, and T. Maruyama / Revised: 16 September 1998 / Accepted: 22 October 1998 Abstract. We investigate the inclinations

Paris-Sud XI, Université de

332

Condensative Stream Query Language for Data Streams Lisha Ma1 Werner Nutt2 Hamish Taylor1  

E-Print Network [OSTI]

Condensative Stream Query Language for Data Streams Lisha Ma1 Werner Nutt2 Hamish Taylor1 1 School the answer to a similar non-aggregate query making query processing condensative. Cur- rent proposals for declarative query languages over data streams do not support such condensative pro- cessing. Nor is it yet

Taylor, Hamish

333

Condensing Effect of Palmitic Acid on DPPC in Mixed Langmuir Gang Ma and Heather C. Allen*  

E-Print Network [OSTI]

Condensing Effect of Palmitic Acid on DPPC in Mixed Langmuir Monolayers Gang Ma and Heather C in the liquid-expanded and condensed phases is explored. A condensing effect of PA on DPPC is observed with VSFG ordering of DPPC chains and causes DPPC to transition from the expanded phase into the condensed phase

334

Nano-mineralogy studies by advanced electron microscopy Chi Ma and George R. Rossman  

E-Print Network [OSTI]

Nano-mineralogy studies by advanced electron microscopy Chi Ma and George R. Rossman Division and planetary materials easier and faster down to nano-scales. Small but new minerals with important geological significance are being discovered. Nano-features are being discovered in many common minerals and gems, which

Ma, Chi

335

Localized corrosion of GaAs surfaces and formation of porous GaAs  

SciTech Connect (OSTI)

The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

Schmuki, P.; Vitus, C.M.; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States); Fraser, J.; Graham, M.J. [National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

1995-12-01T23:59:59.000Z

336

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

337

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; zgr, .; Morko, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

338

Development of ITER 15 MA ELMy H-mode Inductive Scenario  

SciTech Connect (OSTI)

The poloidal field (PF) coil system on ITER, which provides both feedforward and feedback control of plasma position, shape, and current, is a critical element for achieving mission performance. Analysis of PF capabilities has focused on the 15 MA Q = 10 scenario with a 300-500 s flattop burn phase. The operating space available for the 15 MA ELMy H-mode plasma discharges in ITER and upgrades to the PF coils or associated systems to establish confidence that ITER mission objectives can be reached have been identified. Time dependent self-consistent free-boundary calculations were performed to examine the impact of plasma variability, discharge programming, and plasma disturbances. Based on these calculations a new reference scenario was developed based upon a large bore initial plasma, early divertor transition, low level heating in L-mode, and a late H-mode onset. Equilibrium analyses for this scenario indicate that the original PF coil limitations do not allow low li (<0.8) operation or lower flux states, and the flattop burn durations were predicted to be less than the desired 400 s. This finding motivates the expansion of the operating space, considering several upgrade options to the PF coils. Analysis was also carried out to examine the feedback current reserve required in the CS and PF coils during a series of disturbances and a feasibility assessment of the 17 MA scenario was undertaken. Results of the studies show that the new scenario and modified PF system will allow a wide range of 15 MA 300-500 s operation and more limited but finite 17 MA operation.

Kessel, C. E.; Campbell, D.; Gribov, Y.; Saibene, G.; Ambrosino, G.; Casper, T.; Cavinato, M.; Fujieda, H.; Hawryluk, R.; Horton, L. D.; Kavin, A.; Kharyrutdinov, R.; Koechl, F.; Leuer, J.; Loarte, A.; Lomas, P. J.; Luce, T.; Lukash, V.; Mattei, M.; Nunes, I.; Parail, V.; Polevoi, A.; Portone, A.; Sartori, R.; Sips, A. C.C.; Thomas, P. R.; Welander, A.; Wesley, J.

2008-10-16T23:59:59.000Z

339

The development of integrated chemical microsensors in GaAs  

SciTech Connect (OSTI)

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

340

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

Water Plan and the Alabama-Florida-Georgia Water Sharing Dispute (The failure to agree on the two Management F. Conservation & Reuse a. Programs for Water Use Efficiency b. Consumptive Use & Return Flows GThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

342

Structure of a Si(100)22-Ga surface  

Science Journals Connector (OSTI)

The 22 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

343

Electronic structure of metallic antiperovskite compound GaCMn3  

Science Journals Connector (OSTI)

We have investigated the electronic structures of antiperovskite GaCMn3 and related Mn compounds SnCMn3, ZnCMn3, and ZnNMn3. In the paramagnetic state of GaCMn3, the Fermi surface nesting feature along the ?R direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector Q??R. Calculated susceptibilities confirm the nesting scenario for GaCMn3, and also explain various magnetic structures of other antiperovskite compounds. Through the band folding effect, the AFM phase of GaCMn3 is stabilized. Nearly equal densities of states at the Fermi level in the ferromagnetic and AFM phases of GaCMn3 indicate that two phases are competing in the ground state.

J. H. Shim; S. K. Kwon; B. I. Min

2002-07-10T23:59:59.000Z

344

Third-order gas-liquid phase transition and the nature of Andrews critical Tian Ma and Shouhong Wang  

E-Print Network [OSTI]

Third-order gas-liquid phase transition and the nature of Andrews critical point Tian Ma-order gas-liquid phase transition and the nature of Andrews critical point Tian Ma1 and Shouhong Wang2 1 is to study the nature of the Andrews critical point in the gas-liquid transition in a physical

Wang, Shouhong

345

Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers  

Science Journals Connector (OSTI)

In0.135Ga0.865N/GaN pin solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (I...

X. M. Cai; Y. Wang; Z. D. Li; X. Q. Lv; J. Y. Zhang; L. Y. Ying

2013-05-01T23:59:59.000Z

346

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

347

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter

348

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network [OSTI]

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

349

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

350

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

351

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

352

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network [OSTI]

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

353

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1  

E-Print Network [OSTI]

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1 Jie Lian,2,3 Wei Lu,4 and Lumin Wang1,5,* 1 Department of Materials Science and Engineering, University Arbor, Michigan 48109, USA 3 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer

Lu, Wei

354

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

355

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect (OSTI)

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

356

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

357

MA 13700  

E-Print Network [OSTI]

Course Coordinator: Renee Roames; ph: 494-1929; office: MATH 808; email: rroames@purdue.edu; Instructor: Gabe Smith; email: smith522@math.purdue.

358

Ma Philippine  

Office of Scientific and Technical Information (OSTI)

and elec. eqpmt." Garments and texti lesb Coppernickeli ron ore Bananasraw coffee Fish and processed food Chemical s Other nontraditional Traditional exports Coconut...

359

MA 16100  

E-Print Network [OSTI]

Course Info. Syllabus Emergency Preparedness Syllabus Attachment Course Calendar Assignment Sheet. Resources. Online Graphing Calculator Past...

360

- MA 162  

E-Print Network [OSTI]

Sep 18, 2014 ... |G1|GZ|G3|G4|G1 |selsrlmlmlciolculclz G11 G14 615 cm mmmwml amiable Slripiabie _ mmmmm F S'p I .H_er R s mmmmmm. ' F ' F surname...

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

MA 265  

E-Print Network [OSTI]

Sections; 265 01 01 MWF 8:30 REC 113 Wang,Yanqiu 820; 265 02 01 MWF 9:30 REC 113 Wang,Yanqiu 820; 265 03 01 MWF 10:30 REC 113 Smith,Jeffrey H...

362

MA 13900  

E-Print Network [OSTI]

Gabe Smith; office: MATH B13; Mondays/Wednesdays 12:30-1:30; Lee Coduti; office: MATH B13; Mondays/Fridays 2:30-3:30; Renee Roames; office: MATH 808

363

MA 166  

E-Print Network [OSTI]

... MATH 175 Cook,Peter W 846; 166 01 01 Th 7:30 EE 236 Wilkins,Jeffrey 739 ... 236 Chen,Lung-Hui 609; 166 11 01 Th 7:30 PHYS 331 Kravitz,Benjamin 743...

364

MA 22000  

E-Print Network [OSTI]

Academic Integrity Policy Campus Emergency Policy Changing Sections; Lesson Notes; Lesson 26 Lesson 27 Lesson 28 Lesson 29 Lesson 30 Lesson...

365

Tammy Ma  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

step toward ignition or alpha heating (where the fusion reactions start to become self-sustaining) or another mission-based project. Together, we'll come up with an idea for an...

366

MA 16021  

E-Print Network [OSTI]

Applied Calculus II And Differential Equations ... Techniques of integration and applications to technology problems such as work and fluid pressure; infinite...

367

MA 22100  

E-Print Network [OSTI]

Calculus For Technology I ... Emergency procedures ... a two-semester sequence in the technique of calculus for students enrolled in certain technical curricula.

368

MA 15300  

E-Print Network [OSTI]

PowerPoints, Video Lessons and Outlines Supplemental Instruction Info Tutoring/Assistance Opportunities Chapter 1 of Textbook Even Answers to Book...

369

MA 182  

E-Print Network [OSTI]

... Midterm Exam 2 Solutions Practice Exam Midterm Exam 1 Continuity facts Limits of increasing sequences and the LUB axiom Floating space tool...

370

Ma Philippine  

Office of Scientific and Technical Information (OSTI)

4 I s Sea PHILIPPINES 7 ; : : ' - ,. * . DE89 007772 PHILIPPINES Asia Pacific Energy Series Country Report DISCLAIMER This report was prepared as an account of work...

371

MA 52300  

E-Print Network [OSTI]

... of linear equations; equations of mathematical physics; study of Laplace, wave and heat equations; methods of solution. Typically offered Fall Spring Summer.

372

MA 262  

E-Print Network [OSTI]

It is of important interest in controls systems, electrical engineering, physics, nuclear engineering, etc. For example, suppose one determines the equations...

373

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gmez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

374

MA Doping Analysis on Breeding Capability and Protected Plutonium Production of Large FBR  

SciTech Connect (OSTI)

Spent fuel from LWR can be seen as long-live waste if it is not recycled or as a 'new fuel' resource if it is recycled into the reactors. Uranium and plutonium have been used for 'new fuel' resources from LWR spent fuel as MOX fuel type which is loaded into thermal reactor or fast reactor types. Other actinides from the spent fuel such as neptunium, americium and curium as minor actinide (MA) are considered to be loaded into the reactors for specific purposes, recently. Those purposes such as for increasing protected plutonium production and breeding capability for protected plutonium as well as in the same time those amount of MA can be reduced to a small quantity as a burner or transmutation purpose. Some investigations and scientific approaches are performed in order to increase a material ''barrier'' in plutonium isotope composition by increasing the even mass number of plutonium isotope such as Pu-238, Pu-240 and Pu-242 as plutonium protected composition. Higher material barrier which related to intrinsic properties of plutonium isotopes with even mass number (Pu-238, Pu-240 and Pu-242), are recognized because of their intense decay heat (DH) and high spontaneous fission neutron (SFN) rates. Those even number mass of plutonium isotope contribute to some criteria of plutonium characterization which will be adopted for present study such as IAEA, Pellaud and Kessler criteria (IAEA, 1972; Pellaud, 2002; and Kessler, 2007). The present paper intends to evaluate the breeding capability as a fuel sustainability index of the reactors and to analyze the composition of protected plutonium production of large power reactor based on the FaCT FBR as reference (Ohki, et al., 2008). Three dimensional FBR core configuration has been adopted which is based on the core optimization calculation of SRAC-CITATION code as reactor core analysis and JENDL-3.3 is adopted for nuclear data library. Some MA doping materials are loaded into the blanket regions which can be considered as breeding region for protected plutonium production. Breeding capability of the reactor can be increased effectively by increasing MA doping rate while criticality condition of the reactor is reduced by doping MA. Adopting MA cycle is also effective to increase the isotopic Pu-238 production in plutonium vector composition for denaturing purpose of plutonium.

Permana, Sidik; Suzuki, Mitsutoshi; Kuno, Yusuke [Japan Atomic Energy Agency, Nuclear Non-proliferation Science and Technology Center, 2-4 Shirane Shirakata, Tokai-mura, Ibaraki, 319-1195 (Japan)

2010-06-22T23:59:59.000Z

375

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect (OSTI)

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castao, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

376

u.s. DEPARTIIIENT OF ENERGY EERE PROJECT MA N A GE M E~ T CENT  

Broader source: Energy.gov (indexed) [DOE]

MA N A GE M E~ T CENT MA N A GE M E~ T CENT ER NEPA DETERlIlINATION Page 1 of2 RECIPIENT:Power Environmental Energy Research Institute STATE: CO PROJECT TITLE: Novel Multidimensional Tracers for Geolhermallnter-Well Diagnostics Funding Opportunity Announcement Number DE-PS36-09G099018 Procurement Instrument Number OE·EEOOO3032 NEPA Control Number GFO-1 0-345 CID Number G03032 Based on my review orlhe Information concerning the proposed action, as NEPA Compliance Officer (authoriud under DOE Order 4SI.IA),1 have made the following determination: ex, EA, [IS APPENDIX AND NUMBER: Description: 83.1 Onsile and offsite site characterization and environmental monitoring. including siting, construction (or modification), operation, and dismantlement or closing (abandonment) of characterization and monitoring devices and siting,

377

MHK Projects/GCK Technology Cape Cod Canal MA US | Open Energy Information  

Open Energy Info (EERE)

GCK Technology Cape Cod Canal MA US GCK Technology Cape Cod Canal MA US < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":5,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"500px","height":"350px","centre":false,"title":"","label":"","icon":"File:Aquamarine-marker.png","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.7433,"lon":-70.6093,"alt":0,"address":"","icon":"http:\/\/prod-http-80-800498448.us-east-1.elb.amazonaws.com\/w\/images\/7\/74\/Aquamarine-marker.png","group":"","inlineLabel":"","visitedicon":""}]}

378

u.s. DEPARTMENT OF ENERGY EERE PROJECT MA->.IAGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

MA->.IAGEMENT CENTER MA->.IAGEMENT CENTER NEPA DETFRMINATION RECIPIENT;AWS Truepower, LlC Page 1 of2 STATE: NY PROJECT TITLE: National Offshore Wind Energy Resource and Design Data Campaign - Analysis and Collaboration Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CIO Number DE-FOA-0000414 DE-EEOOO5372 GF0-0005372-OO1 0 Based on my review oflhe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering, analysis, and dissemination Information gathering (including, but not limited to, literature surveys, inventories, site visits, and audits), data analysis (including, but not limited to, computer modeling), document preparation (including, but not limited to, conceptual design,

379

MHK Projects/GCK Technology Merrimack River Amesbury MA US | Open Energy  

Open Energy Info (EERE)

River Amesbury MA US River Amesbury MA US < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":5,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"500px","height":"350px","centre":false,"title":"","label":"","icon":"File:Aquamarine-marker.png","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.8549,"lon":-70.9267,"alt":0,"address":"","icon":"http:\/\/prod-http-80-800498448.us-east-1.elb.amazonaws.com\/w\/images\/7\/74\/Aquamarine-marker.png","group":"","inlineLabel":"","visitedicon":""}]}

380

u.s. DEPARTMENT OF ENERGY EERE PROJECT MA:-.IAGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

MA:-.IAGEMENT CENTER MA:-.IAGEMENT CENTER NEPA DETERMINATION RECIPIENT:Utah State University PROJECT TITLE: Alternative and Unconventional Energy Research and Development Page 1 of2 STATE: UT Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number COP DE-EEOOO3114 GF0-0003114-OO2 0 Based on my review or the information concerning the proposed action, as NEPA Compliance Officer (authorized under DO E Order 45 1.1A), I have made the following determination: CX, EA, [IS APPENDIX AND NUMBER: Description: B3.6 Siting. oonstruction (or modification), operation. and decommissioning of facilities for indoor bench-scale research projects and oonventionallaboratory operations (for example. preparation of chemical standards and sample analysis):

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381

U.S. DEPARTMENT OF ENERGY EERE PROJECT MA>" AGEMENT CENTER NEPA DETERMINATION  

Broader source: Energy.gov (indexed) [DOE]

MA>" AGEMENT CENTER MA>" AGEMENT CENTER NEPA DETERMINATION RECIPIENT:Oregon Department of Energy PROJECT TITLE: Oregon EECBG Fonnula - City of Winston Page I of3 STATE: OR Funding Opportunity Announcement Number DE-FOA-OOOOO13 Procurement Instrument Number NEPA Control Number em Number EEO Based on my review crthe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4Sl.I A), I have made the (ollowing determination: ex, EA, EIS APPENDIX AND NUMBER: Description : B1.3 Routine maintenance activities and custodial services for buildings, structures, rights-of-way, infrastructures (e.g .* pathways, roads, and railroads ), vehides and eqUipment, and localized vegetatJon and pest control, dunng which operations may be suspended and resumed. Custodial services are activities to preserve facility appearance, worl

382

U.S. DEPARTMENT OF ENERGY EERE PROJECT MA,"iAGEMENTCENTER NEPADETl!RMINATION  

Broader source: Energy.gov (indexed) [DOE]

MA,"iAGEMENTCENTER MA,"iAGEMENTCENTER NEPADETl!RMINATION RECIPIENT:CU Cfeantech -- University of Colorado PROJECT TITLE: CU Cleantech New Venture Challenge Page 1 of2 STATE: CO Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number elD Number DE-FOAOOOOS70 EE0005600 GFO-OOO5600-OO1 0 Based on my review of the information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4Sl.1A), I have made the (ollowing determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering, analysis, and disseminatio n Information gathering (including, but not limited to, literature surveys, inventories, site visits, and audits). data analysis (including. but not limited to, computer modeling), document preparation (including. but not limited to, conceptual design,

383

u.s. DEPARTMENT OF ENERGY EERE PROJECT MA..\lAGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

lAGEMENT CENTER lAGEMENT CENTER NFPA DEl'ERAllNAIION RECIPIENT:MA DEPT. OF ENERGY RESOURCES PROJECT TITLE: STATE ENERGY PROGRAM (SEP) Page 1 of2 STATE: MA Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CIO Number DE·FOA.()()()()643 R130372 GF0-0130372-OO1 Based on my review of the information concerning the proposed action, as NEPA Compliance Officer (authori;.o;ed under DOE Order 45 1.lA), I have made the following de termination : ex, EA, EIS APPENDIX AND NUMBER: Description: A11 Technical advice and as sistance to o rganizations A9 Info rm at ion gathering, analysis, and d issemination Rational for detennination: Technical advice and planning assistance to international, national, state, and local organizations. Information gathering (including, but nollimited to, literature surveys, inventories, site visits, and

384

U.S. DEP.~TMENT OF ENERGY EERE PROJECT MA,\jAGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

MA,\jAGEMENT CENTER MA,\jAGEMENT CENTER NEPA DETERMINATION Page I of2 RECIPIENT: EECBG - American Samoa Government Territorial Energy Office STATE: AS PROJECT TITLE: Improving Recycling Capacity and Solid Waste Education in American Samoa Funding Opportunity Announcement Number PrO(urement Instrument Number DE-EEOOOOB34 NEPA Control Number GFO-OOOO634.Q01 em Number o Based on my review oftbe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A), I have made the (ollowing determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 81 .31 installation or relocation of machinery and equipment Installation or relocation and operation of machinery and equipment (including, but not limited la, laboratory equipment, electronic hardware, manufacturing machinery, maintenance equipment, and health and safety equipment), provided that

385

MaGe - a Geant4-based Monte Carlo framework for low-background experiments  

E-Print Network [OSTI]

A Monte Carlo framework, MaGe, has been developed based on the Geant4 simulation toolkit. Its purpose is to simulate physics processes in low-energy and low-background radiation detectors, specifically for the Majorana and Gerda $^{76}$Ge neutrinoless double-beta decay experiments. This jointly-developed tool is also used to verify the simulation of physics processes relevant to other low-background experiments in Geant4. The MaGe framework contains simulations of prototype experiments and test stands, and is easily extended to incorporate new geometries and configurations while still using the same verified physics processes, tunings, and code framework. This reduces duplication of efforts and improves the robustness of and confidence in the simulation output.

Yuen-Dat Chan; Jason A. Detwiler; Reyco Henning; Victor M. Gehman; Rob A. Johnson; David V. Jordan; Kareem Kazkaz; Markus Knapp; Kevin Kroninger; Daniel Lenz; Jing Liu; Xiang Liu; Michael G. Marino; Akbar Mokhtarani; Luciano Pandola; Alexis G. Schubert; Claudia Tomei

2008-02-06T23:59:59.000Z

386

 

Broader source: Energy.gov (indexed) [DOE]

MA Massachusetts Total Sum City, County, and SEO Allocations MA Massachusetts Total Sum City, County, and SEO Allocations All $ 42,230,600 MA Massachusetts State Energy Office $ 14,752,100 MA Amherst City $ 162,000 MA Arlington City $ 159,700 MA Attleboro City $ 179,600 MA Barnstable Town City $ 202,400 MA Beverly City $ 169,600 MA Billerica City $ 180,200 MA Boston City $ 6,506,200 MA Brockton City $ 865,000 MA Brookline City $ 494,400 MA Cambridge City $ 1,139,400 MA Chelsea City $ 164,000 MA Chicopee City $ 499,100 MA Everett City $ 149,300 MA Fall River City $ 861,300 MA Fitchburg City $ 168,000 MA Framingham City $ 657,000

387

DOE Zero Energy Ready Home Case Study, Transformation, Inc., Production House, Devens, MA  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready Home in Devens, MA that scored HERS 35 without PV or HERS -37 with PV. This 2,508 ft2 custom home has R-46 double-stud walls with opencell spray foam, a vented attic with R-67 blown cellulose, plus R-10 rigid XPS under the slab, R-20 closed-cell spray foam on basement walls, triple-pane windows, and one mini-split ductless heat pump.

388

DOE Zero Energy Ready Home Case Study, Transformations, Inc., Custom House, Devens, MA  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready Home in Devens, MA that scored HERS 34 without PV or HERS -21 with PV. This 3,168 ft2 custom home has R-46 double-stud walls, a vented attic with R-67 blown cellulose, plus R-10 rigid XPS under the slab, R-20 closed-cell spray foam on basement walls, triple-pane windows, and mini-split ductless heat pumps.

389

Ma thse en 2 minutes Sophie Tourret quipe Capp Dir : N. Peltier, M. Echenim  

E-Print Network [OSTI]

Quoi Comment Pourquoi Ma thèse en 2 minutes Sophie Tourret ­ équipe Capp Dir : N. Peltier, M 2 minutes Sophie Tourret ­ équipe Capp Dir : N. Peltier, M. Echenim #12;Génération d ­ équipe Capp Dir : N. Peltier, M. Echenim #12;Génération d'impliqués premiers en logique équationnelle

390

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

391

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

392

Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells  

Science Journals Connector (OSTI)

Low-temperature decay times ?PL are reported for a series of InxGa1-xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4?Lz?10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in ?PL with increasing In composition (0.05?x?0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

Haiping Yu; Christine Roberts; Ray Murray

1995-07-15T23:59:59.000Z

393

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

394

Photovoltaic properties of GaAs:Be nanowire arrays  

SciTech Connect (OSTI)

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.

Bouravleuv, A. D.; Beznasyuk, D. V.; Gilstein, E. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Tchernycheva, M.; Luna Bugallo, A. De; Rigutti, L. [University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France); Yu, L. [CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France); Proskuryakov, Yu. [University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom); Shtrom, I. V.; Timofeeva, M. A. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I.; Cirlin, G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-06-15T23:59:59.000Z

395

Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires  

SciTech Connect (OSTI)

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Choi, J. W.; Ji, H.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2011-12-23T23:59:59.000Z

396

Effects of Ga ion-beam irradiation on monolayer graphene  

SciTech Connect (OSTI)

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)] [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China) [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-08-12T23:59:59.000Z

397

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) experiments were performed on In 0.22 Ga 0.78 As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off) and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth.

K. Chattopadhyay; J. Aubel; S. Sundaram; J. E. Ehret; R. Kaspi; Keith R. Evans

1997-01-01T23:59:59.000Z

398

Crystal Engineering: A Salt of Mellitate Ion, MA?2, with Hydronium, H3O+, Containing ?? Stacks of Neutral Phenazine, PZ, in the Crystal  

Science Journals Connector (OSTI)

The structure of the benznenehexacarboxylic acid (mellitic acid, MA)phenanthroline (PL) complex (MA?2 2PL+1) consisting of infinite stacks of phenanthroline separated for optimum ?? interactions and sandwich...

Isabella L. Karle; Raymond J. Butcher

2009-05-01T23:59:59.000Z

399

The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency  

Science Journals Connector (OSTI)

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) ... quantum dot effectively enhance the overall power conversion efficiency

Chen-Chen Chung; Binh Tinh Tran; Hau-Vei Han; Yen-Teng Ho

2014-03-01T23:59:59.000Z

400

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

Vclav tengl, Jil Henych, Michaela Slun, Tom Matys Grygar, Jana Velick, Martin Kormunda

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Kinetics of indirect photoluminescence in GaAs/AlxGa1?x As double quantum wells in a random potential with a large amplitude  

Science Journals Connector (OSTI)

The kinetics of indirect photoluminescence of GaAs/AlxGa1?x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is ...

L. V. Butov; A. V. Mintsev; A. I. Filin

1999-05-01T23:59:59.000Z

402

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

403

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect (OSTI)

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

404

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

405

Polarization charges and polarization-induced barriers in AlxGa1xNGaN and InyGa1yNGaN heterostructures  

E-Print Network [OSTI]

N?GaN heterostructures L. Jia,a) E. T. Yu, D. Keogh, and P. M. Asbeck Department of Electrical and Computer EngineeringGa1 yN surrounded by n-GaN, capacitance­ voltage profiling studies combined with elementary will most likely require further improvements in p-type GaN conduc- tivity and fabrication of low-resistance

Yu, Edward T.

406

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

407

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

408

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

409

GaAs solar cells close to the thermodynamic limit  

Science Journals Connector (OSTI)

The efficiency of GaAs solar cells can be increased by applying angularly selective filters. It is shown in terms of detailed balance model, why this happens and the concept is proven...

Hoehn, Oliver; Kraus, Tobias; Bauhuis, Gerard; Schwarz, Ulrich T; Blsi, Benedikt

410

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

411

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

412

Exciton front propagation in photoexcited GaAs quantum wells  

E-Print Network [OSTI]

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton ...

Yang, Sen

413

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

414

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect (OSTI)

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

415

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang

2011-10-01T23:59:59.000Z

416

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

417

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

418

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

419

Relational Learning by Imitation Grazia Bombini, Nicola Di Mauro, Teresa M.A. Basile, Stefano Ferilli, and  

E-Print Network [OSTI]

Relational Learning by Imitation Grazia Bombini, Nicola Di Mauro, Teresa M.A. Basile, Stefano Mauro, T.M.A. Basile, S. Ferilli, F. Esposito deciding the next action to execute and requesting

Di Mauro, Nicola

420

mLynx: Relational Mutual Information Nicola Di Mauro, Teresa M.A. Basile, Stefano Ferilli, and Floriana Esposito  

E-Print Network [OSTI]

mLynx: Relational Mutual Information Nicola Di Mauro, Teresa M.A. Basile, Stefano Ferilli of the most relevant features minimizing a Bayesian classifier's probability error. #12;2 Nicola Di Mauro

Di Mauro, Nicola

Note: This page contains sample records for the topic "ga everett ma" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Zero-Waste Events Harvard Office for Sustainability, 46 Blackstone Street, Cambridge, MA 02139 www.green.harvard.edu  

E-Print Network [OSTI]

Zero-Waste Events Harvard Office for Sustainability, 46 Blackstone Street, Cambridge, MA 02139 www.green-compostable materials (i.e. coffee stirrers, tea in foil bags, little creamers) 3. Determine all food and products

Wolfe, Patrick J.

422

Post-yield fracture behaviour of PA-6/LDPE-g-MA/nanoclay ternary nanocomposites: semiductile-to-ductile transition  

Science Journals Connector (OSTI)

Melt-mixed ternary nanocomposites of PA-6/LDPE-g-MA/organoclay, (CloisiteTM...30B) with microscopically confirmed flocculated-intercalated morphology have been evaluated for their plane-stress fracture and failur...

Naresh Dayma; Harjeet S. Jaggi; Bhabani K. Satapathy

2012-11-01T23:59:59.000Z

423

Identification of chemical sedimentary protoliths using iron isotopes in the N3750 Ma Nuvvuagittuq supracrustal belt, Canada  

E-Print Network [OSTI]

Identification of chemical sedimentary protoliths using iron isotopes in the N3750 Ma Nuvvuagittuq partly homogenized Fe isotopes. Variable Fe isotope compositions of bulk quartz­magnetite rocks

Mojzsis, Stephen J.

424

Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy  

Science Journals Connector (OSTI)

The electronic properties of uncharged Ga monovacancies in GaP(110) surfaces are determined from voltage-dependent scanning tunneling microscopy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occupied defect states exist. Depressed dangling bonds in the occupied-state images indicate an inward relaxation of the neighboring P atoms. The results agree with recent theoretical work.

Ph. Ebert and K. Urban

1998-07-15T23:59:59.000Z

425

Emploi du temps Licence de Mathmatiques semestre 6 MA= parcours maths approfondies M= parcours maths MI= parcours math-info ( groupe A en LI2)  

E-Print Network [OSTI]

M= parcours maths MI= parcours math-info ( groupe A en LI2) 08h00-09h30 09h45-11h15 11h30-13h00 13h15-14h45 15h00-16h30 16h45-18h15 lundi MA MA M Anglais* M MI TP Programmation C PV202 MI mardi MA Anglais MA M TD Histoire des Maths M 3.2 M MI TP Projet Scientifique PV214 MI mercredi MA TD Variable

Parusinski, Adam

426

Microscopic identification of the compensation mechanisms in Si-doped GaAs  

Science Journals Connector (OSTI)

The compensation mechanisms of SiGa donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the SiGa donors are consecutively electrically deactivated by SiAs acceptors, Si clusters, and SiGa-Ga-vacancy complexes. A microscopic model based on the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. 1996 The American Physical Society.

C. Domke, Ph. Ebert, M. Heinrich, and K. Urban

1996-10-15T23:59:59.000Z

427

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

428

AlGaInP thin-film LED with omni-directionally reflector and ITO transparent conducting n-type contact  

Science Journals Connector (OSTI)

In this paper a novel AlGaInP thin-film light-emitting diode (LED) with omni-directionally reflector (ODR) and transparent conducting indium tin oxide (ITO) n-type contact structure is proposed, and fabrication process is developed. This reflector is realized with the combination of a low-refractive-index dielectric layer and a high reflectivity metal layer. This allows the light emitted or internally reflected downwardly towards the GaAs substrate at any angle of incidence to be reflected towards the top surface of the chip. ITO n-type contact is used for anti-reflection and current spreading layers on the ODR-LED with ITO. The sheet resistance of the ITO films (95 nm) deposited on n-ohmic contact of ODR-LED is of the order 23.5?/ with up to 90% transmittance (above 92% for 590770 nm) in the visible region of the spectrum. The optical and electrical characteristics of the ODR-LED with ITO are presented and compared to conventional AS-LED and ODR-LED without ITO. It is shown that the light output from the ODR-LED with ITO at forward current 20 mA exceeds that of AS-LED and ODR-LED without ITO by about a factor of 1.63 and 0.16, respectively. A favourable luminous intensity of 218.3 mcd from the ODR-LED with ITO (peak wavelength 620 nm) could be obtained under 20 mA injection, which is 2.63 times and 1.21 times higher than that of AS-LED and ODR-LED without ITO, respectively.

Zhang Jian-Ming; Zou De-Shu; Xu Chen; Guo Wei-Ling; Zhu Yan-Xu; Liang Ting; Da Xiao-Li; Li Jian-Jun; Shen Guang-Di

2007-01-01T23:59:59.000Z

429

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect (OSTI)

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

430

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network [OSTI]

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

431

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

432

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

433

Metal contacts on ZnSe and GaN  

SciTech Connect (OSTI)

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

434

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

435

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect (OSTI)

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

436

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network [OSTI]

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

437

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Melting Behavior of GaN Nanotubes. Atomic-Level Study of Melting Behavior of GaN Nanotubes. Abstract: Molecular dynamics simulations with a Stillinger-Weber potential have been...

438

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

439

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

440

LBNL-4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

4183E-rev1 4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI IA AB BI IL LI IT TY Y I IN N C CA AL LI IF FO OR RN NI IA A: : E EN NV VI IR RO ON NM ME EN NT TA AL L I IM MP PA AC CT TS S A AN ND D D DE EV VI IC CE E P PE ER RF FO OR RM MA AN NC CE E E EX XP PE ER RI IM ME EN NT TA AL L E EV VA AL LU UA AT TI IO ON N O OF F I IN NS ST TA AL LL LE ED D C CO OO OK KI IN NG G E EX XH HA AU US ST T F FA AN N P PE ER RF FO OR RM MA AN NC CE E Brett C. Singer, William W. Delp and Michael G. Apte Indoor Environment Department Atmospheric Sciences Department Environmental Energy Technologies Division July 2011 (Revised February 2012) Disclaimer 1 This document was prepared as an account of work sponsored by the United States Government. While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor The Regents of the University of California, nor any of

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441

Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography  

SciTech Connect (OSTI)

The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6 through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-07-07T23:59:59.000Z

442

Effect of active layer thickness on differential quantum efficiency of 1. 3 and 1. 55. mu. m InGaAsP injection lasers  

SciTech Connect (OSTI)

The dependence of differential quantum efficiency (eta/sub d/) on active layer thickness (d) for 1.3 and 1.55 ..mu..m InGaAsP buried crescent (BC) injection lasers has been measured. A comparison of the results shows that eta/sub d/ for 1.55 ..mu..m lasers increases more rapidly with decreasing d than eta/sub d/ for 1.3 ..mu..m lasers. The significantly different dependence of eta/sub d/ on d in BC lasers suggests that the optical absorption in the active region of InGaAsP lasers is strongly wavelength dependent. This gives the important practical conclusion that the eta/sub d/ for 1.55 ..mu..m lasers can be significantly improved by reducing d, whereas the eta/sub d/ for 1.3 ..mu..m lasers can only be slightly improved by reducing d. As a result of eta/sub d/ vs d investigation, we have obtained high performance 1.3 and 1.55 ..mu..m BC lasers which exhibit threshold currents as low as 9 mA at 25 /sup 0/C, high-temperature operation (up to 100 /sup 0/C), and eta/sub d/ over 65% (1.3 ..mu..m) and 45% (1.55 ..mu..m).

Cheng, W.H.; Su, C.B.; Renner, D.

1987-07-06T23:59:59.000Z

443

Structural ordering and interface morphology in symmetrically strained(GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)  

Science Journals Connector (OSTI)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest ?110? directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation. A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

C. Giannini; L. Tapfer; Y. Zhuang; L. De Caro; T. Marschner; W. Stolz

1997-02-15T23:59:59.000Z

444

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network [OSTI]

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

445

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect (OSTI)

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

446

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect (OSTI)

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

447

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

448

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Universit, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

449

Novel photoaffinity ligands for the GA-receptor  

SciTech Connect (OSTI)

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. (USDA/ARS Biosciences Research Laboratory, Fargo, ND (USA))

1990-05-01T23:59:59.000Z

450

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect (OSTI)

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

451

Invited Paper GaAs/A1O photonic bandgap material fabrication and characterization  

E-Print Network [OSTI]

semiconductor crystals, photonic crystals do not occur naturally. There are, therefore, several seemingly direct bandgap semiconductors, such as GaAs, A1GaAs, InP, InGaAsP, etc., in which the radiative-dimensional photonic bandgaps for microwave and millimeter-wave radiation, and for shorter optical wavelengths in one

Zhou, Weidong

452

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network [OSTI]

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

453

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

454

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network [OSTI]

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

455

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

456

Procurement Directors FROM: Office of Procurement and Assistance Policy, MA-61  

Broader source: Energy.gov (indexed) [DOE]

July 25,2008 July 25,2008 Procurement Directors FROM: Office of Procurement and Assistance Policy, MA-61 Office of Procurement and Assistance Management SUBJECT: Acquisition Letter 2008-02, Audit Management SUMMARY: Attached is Acquisition Letter (AL) 2008-02, Audit Management. It provides guidance to contracting officers on effective management of contract audits for non-M&O prime ;ontracts as well as subcontracts under management and operating (M&O) contracts. This Acquisition Letter replaces AL 2006-12, Corporate Audit Management Program (CAMP), which is cancelled. This Flash and its attachment will be online within a day, at the following website: http:l/mananernent.ener~.~ov/polic~ guidance/volicv flashes-htm. Questions concerning this policy flash should be directed to Helen Oxberger at (202) 287-1332

457

U.S. DEPARTMENT OF ENERGY EERE PROJECT MA.>.JAGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

, .* !. , .* !. U.S. DEPARTMENT OF ENERGY EERE PROJECT MA.>.JAGEMENT CENTER NEPA DETERMINATION RECIPIENT:Laram!e County Community College PROJECT TITLE: LeGe Ulilty-Scale Wind Energy Technology Page 1 of2 STATE: WY Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-PS36-09G099OO9 DE-EEOOOO538 GFO-10-052 0 Based on my review of the information concerning the proposed action, as Nt:PA Compliance Officer (autbori7.ed under DOE Order 451.1A), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathenng (including, but not limited to, literature surveys, Inventones, audits), data analySIS (including computer modeling), document preparation (such as oonceptual des'9n or feasibility studies, analytical energy supply

458

U.S. DEP.'\RTMENT OF ENERGY EERE PROJECT MA.1II AGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

'\RTMENT OF ENERGY '\RTMENT OF ENERGY EERE PROJECT MA.1II AGEMENT CENTER NEPA DETERMINATION RECIPIENT :Freshwater Wind I. lLC PROJECT TITLE: Shallow Water Offshore Wind System Optimization for the Great Lakes Page 1 of2 STATE: OH Funding Opportunity Announcement Number Procurement Instl"ument Number NEPA Control Number elD Number DE-FOA.Q000415 DE-EEOOOO5488 GFO-OOO5488-001 0 Based on my nview or the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SUA),. have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathertng, analysis, and dissemination Information gathering (including, but not limited to, literature surveys, inventories, site Visits, and audits). data analysis

459

TO: Procurement Directors FROM: Office of Procurement and Assistance Policy, MA-61  

Broader source: Energy.gov (indexed) [DOE]

August 23,2010 August 23,2010 TO: Procurement Directors FROM: Office of Procurement and Assistance Policy, MA-61 Office of Procurement and Assistance Management SUBJECT: Acquisition Templates SUMMARY: On March 29,2010, four draft acquisition templates (Confidentiality Certificate, Conflicts of Interest Certificate, Letter to Unsuccessful Offeror and Letter to Successful Offeror) were distributed for Procurement Director (PD) and Head of Contracting Activity (HCA) review and comment. All comments received were considered and changes were made as appropriate. The final versions of the four aforementioned acquisition templates will be e-mailed directly to the Procurement Directors and made available in the STRIPES Library. This Flash and its attachments will be available online within a day, at the following website:

460

U.S. DEPARTI\lIENT OF ENERGY EERE PROJECT MA."IAGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

lIENT OF ENERGY lIENT OF ENERGY EERE PROJECT MA."IAGEMENT CENTER NEPA DETERMINATION RECIPIENT:Louisiana State University and A&M College Page 1 of2 STATE: LA PROJECT TITLE: Geothennal Resource Development with Zero Mass Withdrawal, Engineered Free Convection, and Wellbore Energy Conversion Funding Opportunity ADDounc:ement Number Procurement Instrument Number NEPA Control Number CID Number DE-F0-0000336 OE-EEOOO5125 GF0-0005125-001 0 Based on my review (lrtbe infor madOD concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A),1 have' made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (induding, but not limited to, literature surveys, inventories, audits). data analysIs (including

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461

U.S. DEPAR.Th.IENT OF ENERGY EERE PROJECT MA'\IAGEME~TCE~TER  

Broader source: Energy.gov (indexed) [DOE]

Th.IENT OF ENERGY Th.IENT OF ENERGY EERE PROJECT MA'\IAGEME~TCE~TER NEPA DETFID..ITNATION RECIPIENT:Ciemson University PROJECf TITLE: Clemson University 15MW Hardware-In-the-Loop (HIL) Grid Simulator Page 1 of2 STATE: SC Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number N/A (DNFA) DE-EE0005723 GF0-0005723-001 Based on my review of the information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 45l.1A), l have made tbe foUowing determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information Information gathering (including, but not limited to, literature surveys, inventories, site visits, and audits), gathering, analysis, data analysis (including, but not limited to, computer modeling), document preparation (including, but

462

u.s. DEP.-\RTMENT OF ENERGY EERE PROJECT MA. AGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

RTMENT OF ENERGY RTMENT OF ENERGY EERE PROJECT MA. AGEMENT CENTER NEPA DETERMINATION RECIPIENT :louisiana Department of Natural Resources PROJECT TITLE: State of louisana ARRA-EECBG-St. James Parish (Tl Page 1 of2 STATE : LA Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA-OOOOO13 EEOOOO735 0 Based on my review or lhe information concerning tbe proposed action, as NEPA Compliance Officer (autborized under DOE Order 4S1.1A), I bave made the (ollowing determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 85.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do nol increase the indoor concentrations of potentially harmful substances. These actions may involve financia

463

DOE Challenge Home Case Study, Transformation, Inc., Production House, Devens, MA  

Broader source: Energy.gov (indexed) [DOE]

Production House Production House Devens, MA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

464

DEPART:MENT OF ENERGY EERE PROJECT MA..'JAGEMENT CENTER NEPA DETERMINATION  

Broader source: Energy.gov (indexed) [DOE]

MENT OF ENERGY MENT OF ENERGY EERE PROJECT MA..'JAGEMENT CENTER NEPA DETERMINATION Page 1 of2 RI<:CIPIENT:Wyoming Business Council, State Energy Office STATE: WY PROJECT TITLE: State Energy Program (SEP) PY 2012 Forumla Grant funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA-0000643 DE-FG26-07NT43207 GF(H)()43207-OO1 Based on my review of the information concerning the proposed aetion, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering, analysis, and dissemination A11 Technical advice and assistance to organizations Rational for detennination: Information gathering (including, but not limited to, literature surveys, inventories, site visits, and

465

EERE PROJECT MA.NAGEMENT CENTER NEPA DFTFIU.1INATION PROJECT  

Broader source: Energy.gov (indexed) [DOE]

Atchison Atchison u.s. DI!PARThIl1NT OF l?NERGY EERE PROJECT MA.NAGEMENT CENTER NEPA DFTFIU.1INATION PROJECT TITLE: EECBG DE-EEOOOO727 Atchison Library Ground Source Heat Pump Page 1 of2 STATE : KS Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE FOA 0000013 0 Based on my review of the information tORcuning the proposed action, as NEPA Compliam::e Officer (authorized under DOE Order 451.1A), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical

466

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

467

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

468

Surface morphology and magnetic anisotropy in (Ga,Mn)As  

E-Print Network [OSTI]

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

S. Piano; X. Marti; A. W. Rushforth; K. W. Edmonds; R. P. Campion; O. Caha; T. U. Schulli; V. Holy; B. L. Gallagher

2010-10-01T23:59:59.000Z

469

Operating experience with a GaAs photoemission electron source  

SciTech Connect (OSTI)

We report on the development of several operating procedures that promise to make GaAs photoemission electron sources easier to construct, more reliable to operate, and more amenable to use in dynamic vacuum systems. We describe in particular a method for ''ohmically'' heating a <100> crystal of GaAs under vacuum to approximately 600 /sup 0/C. We also discuss our observations of the role of oxygen in the activation of the crystal surface, the use of continuous cesiation, and of the performance of the crystal under varying vacuum conditions.

Tang, F.C.; Lubell, M.S.; Rubin, K.; Vasilakis, A.; Eminyan, M.; Slevin, J.

1986-12-01T23:59:59.000Z

470

An investigation on reliable passivation of GaP  

E-Print Network [OSTI]

reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index... reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index...

Greaves King, Carlos A.

2012-06-07T23:59:59.000Z

471

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

472

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells  

Science Journals Connector (OSTI)

Dry etch induced damage of GaAs/InGaAs/GaAs heterostructures in an electron cyclotron resonance (ECR) argon discharge has been investigated as a function of additional radio frequency self?biasing of the sample and process pressure in argon ECR discharges. We used depth resolved photoluminescence measurements to determine the influence of the etch process on the samples. We observe a decreasing damage depth for smaller bias voltages reaching its lowest value of 1.7 nm at 20 V bias and a pressure of 0.15 Pa. For lower pressures we observe a strong increase of the damage which is attributed predominantly to high energetic vacuum ultraviolet radiation from the ECR region.

T. Bickl; B. Jacobs; J. Straka; A. Forchel

1993-01-01T23:59:59.000Z

473

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

474

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect (OSTI)

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

475

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy  

Science Journals Connector (OSTI)

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As4 pressure. Additionally, due to the small As4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40?m.

C. Colombo; D. Spirkoska; M. Frimmer; G. Abstreiter; A. Fontcuberta i Morral

2008-04-28T23:59:59.000Z

476

Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures  

Science Journals Connector (OSTI)

The carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well heterostructures have been determined as a function of the incorporated compressive strain in the (GaIn)As quantum-well layer by applying magneto-optical studies. The precise structural parameters, i.e., individual layer thicknesses, strain values, and crystalline perfection, have been determined independently by high-resolution x-ray diffraction and transmission electron microscopy. By analyzing both the allowed and forbidden optical transitions as a function of the magnetic field, detected by polarization-dependent magnetophotoluminescence excitation spectroscopy, the exciton binding energy as well as the effective in-plane electron and heavy-hole masses have been determined quantitatively as a function of strain. The theoretically predicted significant decrease of the in-plane heavy-hole mass with increasing strain has been observed. The obtained results are discussed and compared with the contradictory results reported in the literature.

M. Volk; S. Lutgen; T. Marschner; W. Stolz; E. O. Gbel; P. C. M. Christianen; J. C. Maan

1995-10-15T23:59:59.000Z

477

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect (OSTI)

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

478

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy  

SciTech Connect (OSTI)

We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial In{sub x}Ga{sub 1-x}As (x{approx}0.20) inserts with thicknesses from 36 to 220 nm with {+-}10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L. [Department of Electrical Engineering and California Nano-Systems Institute, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2010-12-13T23:59:59.000Z

479

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect (OSTI)

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

480

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

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481

Structure of negatively charged muonium in n-type GaAs  

Science Journals Connector (OSTI)

Muon level-crossing resonance and muon-spin-rotation measurements on heavily doped n-type GaAs:Si and GaAs:Te show that the majority of positive muons implanted at room temperature form an isolated diamagnetic muonium center located at a high-symmetry site with Ga neighbors along the ?111? direction(s). These experiments, together with theoretical considerations, imply that negatively charged muonium is at or near the tetrahedral interstitial site with four Ga nearest-neighbor atoms. Except for zero-point energy differences, these results should model negatively charged isolated hydrogen in GaAs.

K.H. Chow; R.F. Kiefl; W.A. MacFarlane; J.W. Schneider; D.W. Cooke; M. Leon; M. Paciotti; T.L. Estle; B. Hitti; R.L. Lichti; S.F.J. Cox; C. Schwab; E.A. Davis; A. Morrobel-Sosa; L. Zavieh

1995-05-15T23:59:59.000Z

482

Presentation at Globec Workshop, October 2000, Woods Hole, MA http://globec.whoi.edu/globec-dir/reports/data_workshops/cross-frontal_exchange/cfe-ssc_report_2  

E-Print Network [OSTI]

Presentation at Globec Workshop, October 2000, Woods Hole, MA http://globec.whoi.edu/globec-dir/reports/data_workshops/cross-frontal_exchange/cfe

Townsend, David W.

483

Presentation at Globec Workshop, October 2000, Woods Hole, MA see:http://globec.whoi.edu/globec-dir/reports/data_workshops/cross-frontal_exchange/cfe-ssc_re  

E-Print Network [OSTI]

Presentation at Globec Workshop, October 2000, Woods Hole, MA see:http://globec.whoi.edu/globec-dir/reports/data_workshops/cross-frontal_exchange/cfe

Townsend, David W.

484

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network [OSTI]

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

485

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

486

Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy  

SciTech Connect (OSTI)

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.

Titus, J.; Perera, A. G. U. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)] [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Nguyen, H. P. T.; Mi, Z. [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)] [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)

2013-03-25T23:59:59.000Z

487

GA103 a microprogrammable processor for online filtering  

E-Print Network [OSTI]

GA103 is a 16 bit microprogrammable processor, which emulates the PDP 11 instruction set. It is based on the Am2900 slices. It allows user- implemented microinstructions and addition of hardwired processors. It will perform online filtering tasks in the NA14 experiment at CERN, based on the reconstruction of transverse momentum of photons detected in a lead glass calorimeter. (3 refs).

Calzas, A; Danon, G

1981-01-01T23:59:59.000Z

488

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network [OSTI]

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

489

Response of GaAs to fast intense laser pulses  

E-Print Network [OSTI]

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

490

Recombination in Low-Bandgap InGaAs  

SciTech Connect (OSTI)

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

491

High-quality InP on GaAs  

E-Print Network [OSTI]

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

492

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect (OSTI)

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

493

Models of Mathematics Curriculum Development in Egypt Fayez M. Mina, MA PhD C.Math FIMA  

E-Print Network [OSTI]

417 Models of Mathematics Curriculum Development in Egypt Fayez M. Mina, MA PhD C.Math FIMA, Roxy, Heliopolis, Cairo, Egypt fmmina@link.com.eg Abstract The need for developing mathematics curricula was clarified. Models of mathematics curriculum development in Egypt were identified as

Spagnolo, Filippo

494

HPHC COL-06-MA-BR-2010 20-1649-2 Coverage underwritten by HPHC Insurance Company, Inc., an affiliate  

E-Print Network [OSTI]

HPHC COL-06-MA-BR-2010 20-1649-2 Coverage underwritten by HPHC Insurance Company, Inc;#12;Welcome to the Harvard Pilgrim Student Health Plan. Your Plan is offered by HPHC Insurance Company at www.uhcsr.com. The web site will allow you to easily search for providers by specialty and location

Mountziaris, T. J.

495

Philosophy, Politics & Law BA-MA A master degree adds problem-solving abilities in new and unfamiliar environments within  

E-Print Network [OSTI]

Philosophy, Politics & Law BA-MA A master degree adds problem-solving abilities in new and students of philosophy are well prepared, but also an area which is often intellectually interesting. "...The law is not only a career that interests many philosophers and philosophy students; it is also

Suzuki, Masatsugu

496

Laboratory Safety 46 Blackstone Street, Cambridge, MA 02139 | T: 617.496.3797 | F: 617.496.5509  

E-Print Network [OSTI]

Aerosol-proof rotors and safety cups for centrifuges Other safety equipment 8 Safe work Practices and PPE of pertinent federal and state government regulations, information about safe work practices, safety equipmentLaboratory Safety 46 Blackstone Street, Cambridge, MA 02139 | T: 617.496.3797 | F: 617.496.5509 www

497

DATA FUSION IN 2D AND 3D IMAGE PROCESSING: AN OVERVIEW Isabelle BLOCH, Henri MA^ITRE  

E-Print Network [OSTI]

DATA FUSION IN 2D AND 3D IMAGE PROCESSING: AN OVERVIEW Isabelle BLOCH, Henri MA^ITRE Ecole of the art in image fusion, with an emphasis on the emergence of new techniques, often issued from other the aim of data fusion and its speci city when image informationhas to be combined, with emphasis

498

TOWARDS MANAGING THE RISKS OF DATA MISUSE FOR SPATIAL DATACUBES M-A. Levesque a,b  

E-Print Network [OSTI]

TOWARDS MANAGING THE RISKS OF DATA MISUSE FOR SPATIAL DATACUBES M-A. Levesque a,b , Y. Bédard a support, Spatial OLAP, Spatial data quality, Warnings, Legal, Misuse, Risk ABSTRACT: Over the years, the mass consumption of spatial data caused several concerns in the geomatics community about the risk

499

A Late Neoproterozoic (V630 Ma) high-magnesium andesite suite from southern Israel: implications for the consolidation  

E-Print Network [OSTI]

A Late Neoproterozoic (V630 Ma) high-magnesium andesite suite from southern Israel: implications and depleted in heavy rare earth elements. They are high-magnesium andesites and are similar to low-Ca type 2; Neoproterozoic; high-magnesium andesite 1. Introduction The Arabian^Nubian Shield (ANS) comprises 0012-821X / 03

Basu, Asish R.

500

Character of the diatom assemblage spanning a depositional transition in the Eastern Equatorial Pacific Ocean at 6.6 Ma  

E-Print Network [OSTI]

Approximately 6.6 million years ago in the Eastern Equatorial Pacific a large increase in biogenic mass accumulation rates (MAR?s) occurred. This increased level of biogenic mass accumulation persisted until about 4.4 Ma at which time levels...

Brookshire, Brian Neville, Jr.

2005-02-17T23:59:59.000Z