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Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
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1

Bangor Hydro Electric Company - Residential and Small Commercial...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Bangor Hydro Electric Company - Residential and Small Commercial Heat Pump Program (Maine) Bangor Hydro Electric Company - Residential and Small Commercial Heat Pump Program...

2

Notices 80. Mainestream Finance, Bangor,  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

51 Federal Register 51 Federal Register / Vol. 75, No. 142 / Monday, July 26, 2010 / Notices 80. Mainestream Finance, Bangor, ME, 08-8064-MR. 81. Marine Funding, Inc., South Richmond Hill, NY, 09-9324-MR. 82. Massachusetts Housing Investment Corp, Boston, MA, 09-9073- MR. 83. Member Options LLC, Charlottesville, VA, 10-1754-MRT. 84. Mid Oregon Lending, Inc., Bend, OR, 10-1756-MRT. 85. Midwest Custom Mortgage, Inc., Elgin, IL, 09-9270-MR. 86. Money Connection, Inc., Fairlawn, OH, 09-9273-MR. 87. Money Mortgage Corp., Newark, NJ, 10-1758-MRT. 88. Mortgage Approval Center LLC, Chapel Hill, NC, 10-1759-MRT. 89. Mortgage Direct, Inc., Elmhurst, IL, 10-1761-MRT. 90. Mortgage Options of America, Winchester, MA, 09-9102-MR. 91. Mortgage Security, Inc., East Falmouth, MA, 09-9289-MR.

3

PP-89-1 Bangor Hydro-Electric Company | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PP-89-1 Bangor Hydro-Electric Company PP-89-1 Bangor Hydro-Electric Company Presidental permit authorizing Bangor Hydro-Electric Company to construc, operate and maintain electric...

4

PP-89-1 Bangor Hydro-Electric Company | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

-1 Bangor Hydro-Electric Company PP-89-1 Bangor Hydro-Electric Company Presidental permit authorizing Bangor Hydro-Electric Company to construc, operate and maintain electric...

5

Bangor Hydro Electric Company - Residential and Small Commercial Heat Pump  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Bangor Hydro Electric Company - Residential and Small Commercial Bangor Hydro Electric Company - Residential and Small Commercial Heat Pump Program (Maine) Bangor Hydro Electric Company - Residential and Small Commercial Heat Pump Program (Maine) < Back Eligibility Commercial Residential Savings Category Heating & Cooling Commercial Heating & Cooling Heat Pumps Program Info State Maine Program Type Utility Rebate Program Rebate Amount Mini-Split Heat Pumps: $600; plus 7.75% financing if necessary Provider Bangor Hydro Electric Company Bangor Hydro Electric Company offers a two-tiered incentive program for residential and small commercial customers. Mini-Split Heat Pumps are eligible for a rebate of $600, as well as a loan to cover the initial cost of the heat pump purchase. Financing is offered at 7.75% APR, for up to

6

Bangor Hydro-Electric Co | Open Energy Information  

Open Energy Info (EERE)

Bangor Hydro-Electric Co Bangor Hydro-Electric Co Jump to: navigation, search Name Bangor Hydro-Electric Co Place Maine Service Territory Maine Website www.bhe.com/ Green Button Landing Page secure.bhe.com/webPortal/ Green Button Reference Page www.bhe.com/about-us/news Green Button Implemented Yes Utility Id 1179 Utility Location Yes Ownership I NERC Location NPCC NERC NPCC Yes ISO NE Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 9 (General Service Rate) Commercial Commercial space heating- Single meter Commercial

7

City of Bangor, Wisconsin (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

Wisconsin (Utility Company) Wisconsin (Utility Company) Jump to: navigation, search Name Bangor City of Place Wisconsin Utility Id 1181 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service Commercial Cp-1 Small Power Service with Parallel Generation(20kW or less) Commercial Cp-2 Large Power Service Industrial Cp-2 Large Power Service Primary Metering Discount & Transformer Ownership Discount with Parallel Generation(20kW or less) Industrial Cp-2 Large Power Service Primary Metering Discount & Transformer Ownership

8

Category:Seattle, WA | Open Energy Information  

Open Energy Info (EERE)

Seattle, WA Seattle, WA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Seattle, WA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Seattle WA Puget Sound Energy Inc.png SVFullServiceRestauran... 60 KB SVHospital Seattle WA Puget Sound Energy Inc.png SVHospital Seattle WA ... 58 KB SVLargeHotel Seattle WA Puget Sound Energy Inc.png SVLargeHotel Seattle W... 57 KB SVLargeOffice Seattle WA Puget Sound Energy Inc.png SVLargeOffice Seattle ... 57 KB SVMediumOffice Seattle WA Puget Sound Energy Inc.png SVMediumOffice Seattle... 61 KB SVMidriseApartment Seattle WA Puget Sound Energy Inc.png SVMidriseApartment Sea... 58 KB SVOutPatient Seattle WA Puget Sound Energy Inc.png SVOutPatient Seattle W... 63 KB

9

WA_02_042_GENERAL_MOTORS_POWER_TRAIN_DIV_Waiver_of_Domestic_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA02042GENERALMOTORSPOWERTRAINDIVWaiverofDomestic.pdf WA02042GENERALMOTORSPOWERTRAINDIVWaiverofDomestic.pdf WA02042GENERALMOTORSPOWERTRAINDIVWaiverof...

10

WA_00_026_WASTE_MANAGEMENT_AND_PROC_INC_and_TEXACO_Waiver_of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA99018TEXACOENERGYSYSTEMSWaiverofDomesticandForei.pdf WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome.pdf WA1994001TEXACOEXPLORATIONANDPRODUCTIO...

11

Category:Yakima, WA | Open Energy Information  

Open Energy Info (EERE)

Yakima, WA Yakima, WA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Yakima, WA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Yakima WA Puget Sound Energy Inc.png SVFullServiceRestauran... 61 KB SVHospital Yakima WA Puget Sound Energy Inc.png SVHospital Yakima WA P... 58 KB SVLargeHotel Yakima WA Puget Sound Energy Inc.png SVLargeHotel Yakima WA... 58 KB SVLargeOffice Yakima WA Puget Sound Energy Inc.png SVLargeOffice Yakima W... 58 KB SVMediumOffice Yakima WA Puget Sound Energy Inc.png SVMediumOffice Yakima ... 57 KB SVMidriseApartment Yakima WA Puget Sound Energy Inc.png SVMidriseApartment Yak... 59 KB SVOutPatient Yakima WA Puget Sound Energy Inc.png SVOutPatient Yakima WA... 63 KB SVPrimarySchool Yakima WA Puget Sound Energy Inc.png

12

WA_97_032_CHEMICAL_INDUSTRY_ENVIROMENTAL_TECHNOLOGY_PROJECTS...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Power Marketing Administration Other Agencies You are here Home WA97032CHEMICALINDUSTRYENVIROMENTALTECHNOLOGYPROJECTS.pdf WA97032CHEMICALINDUSTRYENVIROMENTALTECHNOL...

13

DOE/EIS-0372; Draft Environmental Impact Statement for the Bangor Hydro-Electric Company Northeast Reliability Interconnect (August 2005)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Sheet Northeast Reliability Interconnect DEIS Sheet Northeast Reliability Interconnect DEIS iii COVER SHEET Responsible Federal Agency: U.S. Department of Energy, Office of Electricity Delivery and Energy Reliability Cooperating Agencies: U.S. Department of the Interior, U.S. Fish and Wildlife Service (USFWS) and U.S. Department of Commerce, National Oceanic and Atmospheric Administration, National Marine Fisheries Service (NOAA Fisheries) Title: Draft Environmental Impact Statement for the Bangor Hydro-Electric Company Northeast Reliability Interconnect Location: Hancock, Penobscot, and Washington Counties, Maine. Contacts: For additional information on this Draft Environmental Impact Statement (EIS), contact: Dr. Jerry Pell, Project Manager Office of Electricity Delivery and Energy

14

WA_97_038_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreign_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA97038FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA97038FORDMOTORCOMPANYWaiverofDomestican...

15

WA_01_007_SOLAR_TURBINES_Waiver_of_Domestic_and_Foreign_pate...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA07012BOEINGCOMPANYWaiverofDomesticandForeignPate.pdf WA03001CHEVRONTEXACOWaiverofDomesticandForeignPate.pdf WA1993004SOLARTURBINEINCWaivero...

16

WA_99_018_TEXACO_ENERGY_SYSTEMS_Waiver_of_Domestic_and_Forei...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA03037MERIDIANAUTOSYSTEMSWaiverofDomesticandForei.pdf WA03001CHEVRONTEXACOWaiverofDomesticandForeignPate.pdf WA01019GENERALELECTRICCORPWaiver...

17

WA_1994_009_SAINT-BOBAIN-NORTON_INDUSTRIAL_CERAMICS_CORPORAT...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA1993022NORTONCOMPANYWaiverofDomesticandForeignRi.pdf WA97009DETROITDIESELCORPORATIONWaiverofDomesticand.pdf WA1994007KYOCERAINDUSTRIALCERAMIC...

18

WA_1995_025_AMOCO_PRODUCTION_COMPANY_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA1995025AMOCOPRODUCTIONCOMPANYWaiverofDomesticand.pdf WA1995025AMOCOPRODUCTIONCOMPANYWaiverofDomesticand.pdf WA1995025AMOCOPRODUCTIONCOMPANYWaiverofDom...

19

WA_99_022_AIR_PRODUCTS_AND_CHEMICAL_Waiver_of_Domestic_and_F...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA99022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDomesticandF.pdf WA99022AIRPRODUCTSANDCHEMICALWaiverofDome...

20

WA_04_054_ECR_INTERNATIONAL_Waiver_of_Patent_Rights_to_Inven...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA04039HONEYWELLINTERNATIONALWaiverofPatentRightsUn.pdf WA06016BPSOLARINTERNATIONALWaiverofPatentRightsUnd.pdf WA07040GRAFTECHINTERNATIONALLTDW...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

WA_07_016_OSRAM_SYLVANIA_Waiver_of_Patent_Rights_Under_a_DOE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA04016MACKTRUCKSWaiverofPatentRightsunderNRELSub.pdf WA06016BPSOLARINTERNATIONALWaiverofPatentRightsUnd.pdf WA05031OSRAMSYLVANIAPRODUCTSWaiv...

22

DOE/EIS-0372; Draft Environmental Impact Statement for the Bangor Hydro-Electric Company Northeast Reliability Interconnect (August 2005)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Northeast Reliability Interconnect DEIS Northeast Reliability Interconnect DEIS S-1 August 2005 SUMMARY S.1 BACKGROUND S.1.1 Purpose and Need for National Environmental Policy Act Review Executive Order (E.O.) 10485 (September 9, 1953), as amended by E.O. 12038 (February 7, 1978), requires that a Presidential permit be issued by the U.S. Department of Energy (DOE) before electric transmission facilities may be constructed, operated, maintained, or connected at the U.S. international border. Bangor Hydro-Electric Company (BHE) has applied to DOE to amend Presidential Permit PP-89, which authorizes BHE to construct a single-circuit, 345,000-volt (345-kV) alternating-current (AC) electric transmission line across the U.S. international border in the vicinity of Baileyville, Maine.

23

WA_05_006_ABENGOA_BIOENERGY_CORPORATION_Waiver_of_Domestic_a...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

06ABENGOABIOENERGYCORPORATIONWaiverofDomestica.pdf WA05006ABENGOABIOENERGYCORPORATIONWaiverofDomestica.pdf WA05006ABENGOABIOENERGYCORPORATIONWaiverofDomesti...

24

WA_97_009_DETROIT_DIESEL_CORPORATION_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

09DETROITDIESELCORPORATIONWaiverofDomesticand.pdf WA97009DETROITDIESELCORPORATIONWaiverofDomesticand.pdf WA97009DETROITDIESELCORPORATIONWaiverofDomestica...

25

WA_97_010_DETROIT_DIESEL_CORPORATION_Waiver_of_Domestice_and...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0DETROITDIESELCORPORATIONWaiverofDomesticeand.pdf WA97010DETROITDIESELCORPORATIONWaiverofDomesticeand.pdf WA97010DETROITDIESELCORPORATIONWaiverofDomesticea...

26

WA_03_043_GENERAL_ELECTRIC_POWER_SYSTEMS_Waiver_of_Domestic_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3043GENERALELECTRICPOWERSYSTEMSWaiverofDomestic.pdf WA03043GENERALELECTRICPOWERSYSTEMSWaiverofDomestic.pdf WA03043GENERALELECTRICPOWERSYSTEMSWaiverofDom...

27

WA_03_050_GENERAL_ELECTRIC__POWER_SYSTEMS_Waiver_of_Domestic...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

50GENERALELECTRICPOWERSYSTEMSWaiverofDomestic.pdf WA03050GENERALELECTRICPOWERSYSTEMSWaiverofDomestic.pdf WA03050GENERALELECTRICPOWERSYSTEMSWaiverofDomes...

28

WA_03_016_GENE_ELEC_HYBRID_POWER_GENERATION_SYSTEMS_Waiver_o...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Marketing Administration Other Agencies You are here Home WA03016GENEELECHYBRIDPOWERGENERATIONSYSTEMSWaivero.pdf WA03016GENEELECHYBRIDPOWERGENERATIONSYSTEMS...

29

WA_00_007_COMBUSTION_ENGINEERING_INC_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

07COMBUSTIONENGINEERINGINCWaiverofDomesticand.pdf WA00007COMBUSTIONENGINEERINGINCWaiverofDomesticand.pdf WA00007COMBUSTIONENGINEERINGINCWaiverofDomestica...

30

WA_1995_046_EASTMAN_CHEMICAL_COMPANY_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

46EASTMANCHEMICALCOMPANYWaiverofDomesticand.pdf WA1995046EASTMANCHEMICALCOMPANYWaiverofDomesticand.pdf WA1995046EASTMANCHEMICALCOMPANYWaiverofDomesticand...

31

WA_1995_015_EASTMAN_CHEMICAL_COMPANY_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

15EASTMANCHEMICALCOMPANYWaiverofDomesticand.pdf WA1995015EASTMANCHEMICALCOMPANYWaiverofDomesticand.pdf WA1995015EASTMANCHEMICALCOMPANYWaiverofDomesticand...

32

WA_05_022_DOW_CHEMICAL_COMPANY_Waiver_of_domestic_and_Foreig...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2DOWCHEMICALCOMPANYWaiverofdomesticandForeig.pdf WA05022DOWCHEMICALCOMPANYWaiverofdomesticandForeig.pdf WA05022DOWCHEMICALCOMPANYWaiverofdomesticandFore...

33

WA_04_057_CHEMICAL_RESEARCH_AND_LICENSING_CO_Waiver_of_Paten...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7CHEMICALRESEARCHANDLICENSINGCOWaiverofPaten.pdf WA04057CHEMICALRESEARCHANDLICENSINGCOWaiverofPaten.pdf WA04057CHEMICALRESEARCHANDLICENSINGCOWaiverofPat...

34

WA_02_042_GENERAL_MOTORS_POWER_TRAIN_DIV_Waiver_of_Domestic_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

42GENERALMOTORSPOWERTRAINDIVWaiverofDomestic.pdf WA02042GENERALMOTORSPOWERTRAINDIVWaiverofDomestic.pdf WA02042GENERALMOTORSPOWERTRAINDIVWaiverofDomest...

35

WA_06_034_ENERGY_CONVERSION_DEVICES_INC_Waiver_of_Domestic_a...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

06034ENERGYCONVERSIONDEVICESINCWaiverofDomestica.pdf WA06034ENERGYCONVERSIONDEVICESINCWaiverofDomestica.pdf WA06034ENERGYCONVERSIONDEVICESINCWaiverofDom...

36

WA_1993_028_ALLIANCE_ELECTRIC_COMPANY_Waiver_of_Domestic_and...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2MARTINMARIETTACORPORATIONKNOWASGENERALDYNA.pdf WA1994013GENERALELECTRICCOMPANYCORPORATERESEARCHAND.pdf WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome...

37

WA_1995_026_CHEVRON_PRODUCTION_COMPNAY_Waiver_of_Domestic_an...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

UCTIONCOMPNAYWaiverofDomestican.pdf More Documents & Publications WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome.pdf WA1993028ALLIANCEELECTRICCOMPANYWaiver...

38

WA_1994_012_MARTIN_MARIETTA_CORPORATION_KNOW_AS_GENERAL_DYNA...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3GENERALELECTRICCOMPANYCORPORATERESEARCHAND.pdf WA1993028ALLIANCEELECTRICCOMPANYWaiverofDomesticand.pdf WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome...

39

WA_1994_001_TEXACO_EXPLORATION_AND_PRODUCTION_Waiver_of_Dome...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

01TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome.pdf WA1994001TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome.pdf WA1994001TEXACOEXPLORATIONANDPRODUCTIONWaiverofDom...

40

WA_1993_023_TEXACO_EXPLORATION_AND_PRODUCTION_Waiver_of_Dome...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

23TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome.pdf WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome.pdf WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDom...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

WA_97_018_INTERNATIONAL_FUEL_CELLS_CORPS_Waiver_of_Domestic_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7018INTERNATIONALFUELCELLSCORPSWaiverofDomestic.pdf WA97018INTERNATIONALFUELCELLSCORPSWaiverofDomestic.pdf WA97018INTERNATIONALFUELCELLSCORPSWaiverofDom...

42

WA_02_050_SPECIALIZED_TECHNOLOGY_RESOURCES_Waiver_of_Patent_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

50SPECIALIZEDTECHNOLOGYRESOURCESWaiverofPatent.pdf WA02050SPECIALIZEDTECHNOLOGYRESOURCESWaiverofPatent.pdf WA02050SPECIALIZEDTECHNOLOGYRESOURCESWaiverofPate...

43

WA_04_076_CHEVRONTEXACO_TECHNOLOGY_VENTURES_Waiver_of_Patent...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6CHEVRONTEXACOTECHNOLOGYVENTURESWaiverofPatent.pdf WA04076CHEVRONTEXACOTECHNOLOGYVENTURESWaiverofPatent.pdf WA04076CHEVRONTEXACOTECHNOLOGYVENTURESWaiverofPate...

44

WA_04_028_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_patent_Rights...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4028AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatentRights.pdf WA04028AIRPRODUCTSANDCHEMICALSWaiverofpatent...

45

WA_1994_021_ATLANTA_GAS_LIGHT_AND_ABSORBENT_RESEARCH_Waiver_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4021ATLANTAGASLIGHTANDABSORBENTRESEARCHWaiver.pdf WA1994021ATLANTAGASLIGHTANDABSORBENTRESEARCHWaiver.pdf WA1994021ATLANTAGASLIGHTANDABSORBENTRESEARCHWai...

46

WA_05_060_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

60SHELLSOLARINDUSTRIESWaiverofDomesticandfore.pdf WA05060SHELLSOLARINDUSTRIESWaiverofDomesticandfore.pdf WA05060SHELLSOLARINDUSTRIESWaiverofDomesticandf...

47

WA_1995_012_ENGELHARDT_INSTITUTE_OF_MOLECULAR_BIOLOGY_Waiver...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

12ENGELHARDTINSTITUTEOFMOLECULARBIOLOGYWaiver.pdf WA1995012ENGELHARDTINSTITUTEOFMOLECULARBIOLOGYWaiver.pdf WA1995012ENGELHARDTINSTITUTEOFMOLECULARBIOLOGYWaive...

48

WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS WA-TRIBE-STILLAGUAMISH TRIBE OF INDIANS Energy Efficiency and Conservation Block Grant Program Location: Tribe WA-TRIBE- STILLAGUAMISH TRIBE OF INDIANS WA American Recovery and Reinvestment Act: Proposed Action or Project Description The Stillaguamish Tribe proposes to expand its Stillaguamish Tribe Transit Services (STTS). For the past three years, the STTS has employed 14-passenger buses to transport clients to and from the tribal medical, dental, behavioral health and massage clinics. Often the demand-response requests that come to STTS are for one to three passengers at a time; therefore, funds are being requested to purchase a hybrid sedan to transport clients. Conditions: None Categorical Exclusion(s) Applied: A1, B1.32, B5.1 *-For the complete DOE National Environmental Policy Act regulations regarding categorical exclusions, see Subpart D of 10 CFR10 21

49

Notice of Public Hearings for the Proposed Bangor Hydro-Electric Company (BHE) Northeast Reliability Inteconnect (DOE/EIS-0372) (09/12/05)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6 Federal Register 6 Federal Register / Vol. 70, No. 175 / Monday, September 12, 2005 / Notices DEPARTMENT OF ENERGY [Docket No. PP-89-1] Notice of Public Hearings for the Proposed Bangor Hydro-Electric Company (BHE) Northeast Reliability Interconnect AGENCY: Department of Energy. ACTION: Notice of public hearings. SUMMARY: The Department of Energy (DOE) announces two public hearings on the ''Draft Environmental Impact Statement for the Bangor Hydro-Electric Company (BHE) Northeast Reliability Interconnect'' (DOE/EIS-0372). The Draft EIS was prepared pursuant to the National Environmental Policy Act of 1969 (NEPA), as amended, 42 U.S.C. 4321 et seq., the Council on Environmental Quality NEPA regulations, 40 CFR parts 1500-1508, and the DOE NEPA regulations, 10 CFR part 1021. The U.S. Fish and Wildlife

50

WA_05_046_GENERAL_MOTORS_CORPORATION_Waiver_of_domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

& Publications WA04070GENERALMOTORSCORPORATIONWaiverofDomesticand.pdf WA02042GENERALMOTORSPOWERTRAINDIVWaiverofDomestic.pdf Advance Patent Waiver W(A)2010-031...

51

WA_01_023_BP_NORTH_AMERICAN_Waiver_of_Domestic_and_Foreign_I...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

More Documents & Publications Advance Patent Waiver W(A)2012-002 Advance Patent Waiver W(A)2012-016 WA1993023TEXACOEXPLORATIONANDPRODUCTIONWaiverofDome...

52

WA_01_029_GENERAL_ELECTRIC_R_and_D_Waiver_of_Patent_Rights_under...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA01029GENERALELECTRICRandDWaiverofPatentRightsunder.pdf WA01029GENERALELECTRICRandDWaiverofPatentRightsunder.pdf WA01029GENERALELECTRICRandDWaiver...

53

Changes related to "Category:Seattle, WA" | Open Energy Information  

Open Energy Info (EERE)

page Share this page on Facebook icon Twitter icon Changes related to "Category:Seattle, WA" Category:Seattle, WA Jump to: navigation, search This is a list of changes...

54

RECIPIENT:WA Dept. of Commerce STATE: WA PROJECT SEP ARRA SIRTI -  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA Dept. of Commerce STATE: WA WA Dept. of Commerce STATE: WA PROJECT SEP ARRA SIRTI - Demand Energy - Energy Storage System Tied to Solar on Commercial Facility TITLE: Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number DE-FOA-0000052 DE-EEOOO0139 GFO-o000139-031 Based on my review ofthe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and demand studies), and dissemination (including, but not limited to, document mailings, publication, and distribution;

55

WA_1994_027_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreig...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4027FORDMOTORCOMPANYWaiverofDomesticandForeig.pdf WA1994027FORDMOTORCOMPANYWaiverofDomesticandForeig.pdf WA1994027FORDMOTORCOMPANYWaiverofDomesticandFo...

56

WA_99_015_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreign_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

99015FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA99015FORDMOTORCOMPANYWaiverofDomesticandForeign.pdf WA99015FORDMOTORCOMPANYWaiverofDomesticandF...

57

WA_1993_032_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreig...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

32FORDMOTORCOMPANYWaiverofDomesticandForeig.pdf WA1993032FORDMOTORCOMPANYWaiverofDomesticandForeig.pdf WA1993032FORDMOTORCOMPANYWaiverofDomesticandForei...

58

WA_1993_004_SOLAR_TURBINE_INC_Waiver_of_Domestic_and_Foreign...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

04SOLARTURBINEINCWaiverofDomesticandForeign.pdf WA1993004SOLARTURBINEINCWaiverofDomesticandForeign.pdf WA1993004SOLARTURBINEINCWaiverofDomesticandForeig...

59

WA_00_012_3M_COMPANY_Waiver_of_Domestic_and_Foreign_Rights_u...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DomesticandForeignRightsu.pdf More Documents & Publications WA99008DUPONTSUPERCONDUCTIVITYWaiverofUSandForeign.pdf WA03046INTERMAGNETICSGENERALCORPWaiverofDo...

60

WA_99_008_DUPONT_SUPERCONDUCTIVITY_Waiver_of_US_and_Foreign_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9008DUPONTSUPERCONDUCTIVITYWaiverofUSandForeign.pdf WA99008DUPONTSUPERCONDUCTIVITYWaiverofUSandForeign.pdf WA99008DUPONTSUPERCONDUCTIVITYWaiverofUSandFo...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

WA_07_012_BOEING_COMPANY_Waiver_of_Domestic_and_Foreign_Pate...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

THEBOEINGCOMPANYWaiverofdomesticandForeign.pdf WA01007SOLARTURBINESWaiverofDomesticandForeignpate.pdf WA03001CHEVRONTEXACOWaiverofDomesticandForeignPate...

62

WA_04-001_AMENDED_SILICATES_Waiver_of_Domestic_and_Foreign_I...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA00001PRAXAIRINCWaiverofDomesticandForeignInventi.pdf WA03001CHEVRONTEXACOWaiverofDomesticandForeignPate...

63

WA_03_015_HYBRID_POWER_GENERATION_SYSTEMS_Waiver_of_Domestic...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Sites Power Marketing Administration Other Agencies You are here Home WA03015HYBRIDPOWERGENERATIONSYSTEMSWaiverofDomestic.pdf WA03015HYBRIDPOWERGENERATIONSYSTEMS...

64

WA_07_022_SIEMENS_POWER_GENERATION_INC_Waiver_of_Patent_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Power Marketing Administration Other Agencies You are here Home WA07022SIEMENSPOWERGENERATIONINCWaiverofPatentRigh.pdf WA07022SIEMENSPOWERGENERATIONINCWaiv...

65

WA_1994_022_CUMMINS_POWER_GENERATION_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Power Marketing Administration Other Agencies You are here Home WA1994022CUMMINSPOWERGENERATIONWaiverofDomesticand.pdf WA1994022CUMMINSPOWERGENERATIONWaivero...

66

WA_03_017_HYBRID_POWER_GENERATION_SYSTEMS_Waiver_of_Domestic...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Sites Power Marketing Administration Other Agencies You are here Home WA03017HYBRIDPOWERGENERATIONSYSTEMSWaiverofDomestic.pdf WA03017HYBRIDPOWERGENERATIONSYSTEMS...

67

WA_1993_006_CUMMINS_POWER_GENERATION_INC_Waiver_of_Domestic_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Power Marketing Administration Other Agencies You are here Home WA1993006CUMMINSPOWERGENERATIONINCWaiverofDomestic.pdf WA1993006CUMMINSPOWERGENERATIONINCWaiv...

68

WA_98_006_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Power Marketing Administration Other Agencies You are here Home WA98006WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98006WESTINGHOUSEPOWERGENERATIONAFORMER...

69

WA_04_017_CUMMINS_POWER_GENERATION_Waiver_of_Domestic_and_Fo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Power Marketing Administration Other Agencies You are here Home WA04017CUMMINSPOWERGENERATIONWaiverofDomesticandFo.pdf WA04017CUMMINSPOWERGENERATIONWaivero...

70

WA_1995_035_ABB_POWER_GENERATION_INC_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Sites Power Marketing Administration Other Agencies You are here Home WA1995035ABBPOWERGENERATIONINCWaiverofDomesticand.pdf WA1995035ABBPOWERGENERATIONINCWaiv...

71

WA_04_080_HYBRID_POWER_GENERATION_SYSTEMS_Waiver_of_Patent_R...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Sites Power Marketing Administration Other Agencies You are here Home WA04080HYBRIDPOWERGENERATIONSYSTEMSWaiverofPatentR.pdf WA04080HYBRIDPOWERGENERATIONSYSTEMS...

72

WA_98_005_WESTINGHOUSE_POWER_GENERATION_A_FORMER_DIVISION_OF...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Power Marketing Administration Other Agencies You are here Home WA98005WESTINGHOUSEPOWERGENERATIONAFORMERDIVISIONOF.pdf WA98005WESTINGHOUSEPOWERGENERATIONAFORMER...

73

WA_03_014_HYBRID_POWER_GENERATION_SYSTEMS_Waiver_of_Domestic...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Sites Power Marketing Administration Other Agencies You are here Home WA03014HYBRIDPOWERGENERATIONSYSTEMSWaiverofDomestic.pdf WA03014HYBRIDPOWERGENERATIONSYSTEMS...

74

WA_02_011_BP_AMOCO_CHEMICAL_CO_Waiver_of_Domestic_and_Foreig...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1BPAMOCOCHEMICALCOWaiverofDomesticandForeig.pdf WA02011BPAMOCOCHEMICALCOWaiverofDomesticandForeig.pdf WA02011BPAMOCOCHEMICALCOWaiverofDomesticandFore...

75

WA_1993_036_DOW_CHEMICAL_COMPANY_Waiver_of_Domestic_and_Fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

36DOWCHEMICALCOMPANYWaiverofDomesticandFore.pdf WA1993036DOWCHEMICALCOMPANYWaiverofDomesticandFore.pdf WA1993036DOWCHEMICALCOMPANYWaiverofDomesticandFor...

76

WA_01_032_DOW_CHEMICAL_Waiver_of_Domestic_and_foreign_Patent...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1032DOWCHEMICALWaiverofDomesticandforeignPatent.pdf WA01032DOWCHEMICALWaiverofDomesticandforeignPatent.pdf WA01032DOWCHEMICALWaiverofDomesticandforeign...

77

WA_06_019_NALCO_CHEMICAL_COMPANY_Waiver_of_Domestic_and_Fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

19NALCOCHEMICALCOMPANYWaiverofDomesticandFore.pdf WA06019NALCOCHEMICALCOMPANYWaiverofDomesticandFore.pdf WA06019NALCOCHEMICALCOMPANYWaiverofDomesticandF...

78

WA_03_033_GE_WIND_ENERGY_LLC_Waiver_of_Domestic_and_Foreign_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3GEWINDENERGYLLCWaiverofDomesticandForeign.pdf WA03033GEWINDENERGYLLCWaiverofDomesticandForeign.pdf WA03033GEWINDENERGYLLCWaiverofDomesticandForeig...

79

WA_03_013_ANADARKO_PETROLEUM_Waiver_of_Domestic_and_Foreign_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3013ANADARKOPETROLEUMWaiverofDomesticandForeign.pdf WA03013ANADARKOPETROLEUMWaiverofDomesticandForeign.pdf WA03013ANADARKOPETROLEUMWaiverofDomesticandFo...

80

WA_-01_001_PHILLIPS_PETROLEUM_Waiver_of_Domestic_and_Foreign...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticandForeign.pdf WA-01001PHILLIPSPETROLEUMWaiverofDomesticand...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

WA_04_036_HRL_Laboratories_LLC_.Waiver_pof_dDomestic_fand_Fo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9GENERALMOTORSCORPWaiverofDomesticandForeign.pdf WA02042GENERALMOTORSPOWERTRAINDIVWaiverofDomestic.pdf WA03044CATERPILLARINCWaiverofDomesticandForeignR...

82

WA_04_026_ENERGY_CONVERSION_DEVICES_Waiver_of_Domestic_and_F...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6ENERGYCONVERSIONDEVICESWaiverofDomesticandF.pdf WA04026ENERGYCONVERSIONDEVICESWaiverofDomesticandF.pdf WA04026ENERGYCONVERSIONDEVICESWaiverofDomesticand...

83

WA_1993_018_CONSOLIDATION_COAL_CO_Waiver_of_Domestic_and_For...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

18CONSOLIDATIONCOALCOWaiverofDomesticandFor.pdf WA1993018CONSOLIDATIONCOALCOWaiverofDomesticandFor.pdf WA1993018CONSOLIDATIONCOALCOWaiverofDomesticandFo...

84

WA_04_034_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04034NUVERAFUELCELLSINCWaiverofDomesticandFor...

85

WA_04_041_NUVERA_FUEL_CELLS_INC_Waiver_of_Domestic_and_Forei...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

41NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandForei.pdf WA04041NUVERAFUELCELLSINCWaiverofDomesticandFo...

86

WA_03_054_HEIL_TRAILER_INTERNATIONAL_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ADVANCEDTECHNLOGYMATERIALSWaiverofDomestican.pdf WA04054ECRINTERNATIONALWaiverofPatentRightstoInven.pdf WA02035BPSOLARINTERNATIONALWaiverofDomesticandFore...

87

WA_04_055_BALLARD_POWER_SYSTEMS_CORP_Waiver_of_Domestic_and_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

More Documents & Publications WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA99014UNITEDSOLARSYSTEMSCORPWaiverofDomesticandF.pdf...

88

WA_04_083_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04083AIRPRODUCTSANDCHEMICALSWaiverofPatentRigh...

89

WA_00_027_HONEYWELL_POWER_SYSTEMS_Waiver_of_Patent_Rights.pdf...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7HONEYWELLPOWERSYSTEMSWaiverofPatentRights.pdf WA00027HONEYWELLPOWERSYSTEMSWaiverofPatentRights.pdf WA00027HONEYWELLPOWERSYSTEMSWaiverofPatentRights.pdf...

90

WA_05_062_UNITED_TECHNOLOGIES_CORPORATION_Waiver_of_Patent_R...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5062UNITEDTECHNOLOGIESCORPORATIONWaiverofPatentR.pdf WA05062UNITEDTECHNOLOGIESCORPORATIONWaiverofPatentR.pdf WA05062UNITEDTECHNOLOGIESCORPORATIONWaiverofPa...

91

WA_04_082_DELPHI_AUTOMOTIVE_SYSTEMS_Waiver_of_Patent_Rights_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4082DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA04082DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA04082DELPHIAUTOMOTIVESYSTEMSWaiverofPatentR...

92

WA_02_015_AIR_PRODUCTS_AND_CHEMICALS_INC_Waiver_of_Patent_Ri...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatentRi.pdf WA02015AIRPRODUCTSANDCHEMICALSINCWaiverofPatent...

93

WA_07_040_GRAFTECH_INTERNATIONAL_LTD_Waiver_of_Patent_Rights...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

40GRAFTECHINTERNATIONALLTDWaiverofPatentRights.pdf WA07040GRAFTECHINTERNATIONALLTDWaiverofPatentRights.pdf WA07040GRAFTECHINTERNATIONALLTDWaiverofPatentRig...

94

WA_06_032_HONEYWELL_TURBO_TECHNOLOGIES_Waiver_of_Patent_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2HONEYWELLTURBOTECHNOLOGIESWaiverofPatentRigh.pdf WA06032HONEYWELLTURBOTECHNOLOGIESWaiverofPatentRigh.pdf WA06032HONEYWELLTURBOTECHNOLOGIESWaiverofPatentRi...

95

WA_04_040_HONEYWELL_INTERNATIONAL_INC_Waiver_of_Patent_Right...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0HONEYWELLINTERNATIONALINCWaiverofPatentRight.pdf WA04040HONEYWELLINTERNATIONALINCWaiverofPatentRight.pdf WA04040HONEYWELLINTERNATIONALINCWaiverofPatentRig...

96

WA_06_005_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA06005AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA06005AIRPRODUCTSANDCHEMICALSWaiverofPatentRigh...

97

WA_04_012_MACK_TRUCK_INC_Waiver_of_patent_Rights_under_NREL_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2MACKTRUCKINCWaiverofpatentRightsunderNREL.pdf WA04012MACKTRUCKINCWaiverofpatentRightsunderNREL.pdf WA04012MACKTRUCKINCWaiverofpatentRightsunderNRE...

98

WA_04_025_AIR_LIQUIDE_AMERICA_Waiver_of_Patent_Rights_under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

25AIRLIQUIDEAMERICAWaiverofPatentRightsunder.pdf WA04025AIRLIQUIDEAMERICAWaiverofPatentRightsunder.pdf WA04025AIRLIQUIDEAMERICAWaiverofPatentRightsund...

99

WA_04_043_UNITED_TECHNOLOGIES_CORP_Waiver_of_Patent_Rights_t...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

43UNITEDTECHNOLOGIESCORPWaiverofPatentRightst.pdf WA04043UNITEDTECHNOLOGIESCORPWaiverofPatentRightst.pdf WA04043UNITEDTECHNOLOGIESCORPWaiverofPatentRight...

100

WA_05_037_UNITED_TECHNOLOGIES_CORP_Waiver_of_Patent_Rights_t...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7UNITEDTECHNOLOGIESCORPWaiverofPatentRightst.pdf WA05037UNITEDTECHNOLOGIESCORPWaiverofPatentRightst.pdf WA05037UNITEDTECHNOLOGIESCORPWaiverofPatentRights...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

WA_05_033_EASTMAN_CHEMICAL_COMPANY_Waiver_of_Patent_Rights_t...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

33EASTMANCHEMICALCOMPANYWaiverofPatentRightst.pdf WA05033EASTMANCHEMICALCOMPANYWaiverofPatentRightst.pdf WA05033EASTMANCHEMICALCOMPANYWaiverofPatentRight...

102

WA_04_063_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA04063AIRPRODUCTSANDCHEMICALSWaiverofPatentRigh...

103

WA_01_005__PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_patent...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeignpatent.pdf WA01005PRAXAIRINCWaiverofDomesticandForeignpate...

104

WA_05_029_AIR_PRODUCTS_AND_CHEMICALS_Waiver_of_Patent_Rights...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA05029AIRPRODUCTSANDCHEMICALSWaiverofPatentRights.pdf WA05029AIRPRODUCTSANDCHEMICALSWaiverofPatentRigh...

105

WA_05_025_GE_NUCLEAR_ENERGY_Waiver_of_patent_Rights_Under_a_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5025GENUCLEARENERGYWaiverofpatentRightsUndera.pdf WA05025GENUCLEARENERGYWaiverofpatentRightsUndera.pdf WA05025GENUCLEARENERGYWaiverofpatentRightsUn...

106

WA_03_048_AMERICAN_SUPERCONDUCTOR_CORP_Waiver_of_Patent_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

48AMERICANSUPERCONDUCTORCORPWaiverofPatentRigh.pdf WA03048AMERICANSUPERCONDUCTORCORPWaiverofPatentRigh.pdf WA03048AMERICANSUPERCONDUCTORCORPWaiverofPatentR...

107

WA_03_021_DELPHI_AUTOMOTIVE_SYSTEMS_Waiver_of_Patent_Rights_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA03021DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRights.pdf WA03021DELPHIAUTOMOTIVESYSTEMSWaiverofPatentRight...

108

WA_06_033_PARKER_HANNIFIN_CORPORATION_Waiver_of_Patent_Right...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3PARKERHANNIFINCORPORATIONWaiverofPatentRight.pdf WA06033PARKERHANNIFINCORPORATIONWaiverofPatentRight.pdf WA06033PARKERHANNIFINCORPORATIONWaiverofPatentRig...

109

WA_07_015_UNITED_TECHNOLOGIES_CORP_Waiver_of_Patent_Rights_t...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

15UNITEDTECHNOLOGIESCORPWaiverofPatentRightst.pdf WA07015UNITEDTECHNOLOGIESCORPWaiverofPatentRightst.pdf WA07015UNITEDTECHNOLOGIESCORPWaiverofPatentRight...

110

WA_04_072_UNITED_TECHNOLOGIES_CORP_Waiverof_Patent_Rights_to...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2UNITEDTECHNOLOGIESCORPWaiverofPatentRightsto.pdf WA04072UNITEDTECHNOLOGIESCORPWaiverofPatentRightsto.pdf WA04072UNITEDTECHNOLOGIESCORPWaiverofPatentRights...

111

WA_1995_047_BLACK_CLAWSON_COMPANY_Waiver_of_Domestic_and_For...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7BLACKCLAWSONCOMPANYWaiverofDomesticandFor.pdf WA1995047BLACKCLAWSONCOMPANYWaiverofDomesticandFor.pdf WA1995047BLACKCLAWSONCOMPANYWaiverofDomesticandFor...

112

WA_98_020_THERMO_BLACK_CLAWSON_INC_Waiver_of_Domestic_and_Fo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0THERMOBLACKCLAWSONINCWaiverofDomesticandFo.pdf WA98020THERMOBLACKCLAWSONINCWaiverofDomesticandFo.pdf WA98020THERMOBLACKCLAWSONINCWaiverofDomesticand...

113

WA_01_014_VOITH_FABRICS_APPLETON_Waiver_of_Domestic_and_Fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1014VOITHFABRICSAPPLETONWaiverofDomesticandFore.pdf WA01014VOITHFABRICSAPPLETONWaiverofDomesticandFore.pdf WA01014VOITHFABRICSAPPLETONWaiverofDomestican...

114

WA_98_019_SIEMENS_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8019SIEMENSSOLARINDUSTRIESWaiverofDomesticandFo.pdf WA98019SIEMENSSOLARINDUSTRIESWaiverofDomesticandFo.pdf WA98019SIEMENSSOLARINDUSTRIESWaiverofDomestic...

115

WA_1995_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

30GOLDENPHOTONINCWaiverofDomesticandForeign.pdf WA1995030GOLDENPHOTONINCWaiverofDomesticandForeign.pdf WA1995030GOLDENPHOTONINCWaiverofDomesticandForeig...

116

WA_05_059_SHELL_SOLAR_INDUSTRIES_LP_Waiver_of_Domestic_and_F...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

59SHELLSOLARINDUSTRIESLPWaiverofDomesticandF.pdf WA05059SHELLSOLARINDUSTRIESLPWaiverofDomesticandF.pdf WA05059SHELLSOLARINDUSTRIESLPWaiverofDomestican...

117

WA_1995_002_SIEMENS_SOLAR_INDUSTRIES_Waiver_of_US_and_Foreig...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

02SIEMENSSOLARINDUSTRIESWaiverofUSandForeig.pdf WA1995002SIEMENSSOLARINDUSTRIESWaiverofUSandForeig.pdf WA1995002SIEMENSSOLARINDUSTRIESWaiverofUSandForei...

118

WA_00_028_LOUISIANA_PACIFIC_CORP_Waiver_of_Domestic_and_Fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0028LOUISIANAPACIFICCORPWaiverofDomesticandFore.pdf WA00028LOUISIANAPACIFICCORPWaiverofDomesticandFore.pdf WA00028LOUISIANAPACIFICCORPWaiverofDomestican...

119

WA_03_010_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

10SHELLSOLARINDUSTRIESWaiverofDomesticandFore.pdf WA03010SHELLSOLARINDUSTRIESWaiverofDomesticandFore.pdf WA03010SHELLSOLARINDUSTRIESWaiverofDomesticandF...

120

WA_98_008_GENERAL_ELECTRIC_COMPANY_Waiver_Under_a_Subcontrac...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA98008GENERALELECTRICCOMPANYWaiverUnderaSubcontrac.pdf WA98008GENERALELECTRICCOMPANYWaiverUnderaSubcontrac.pdf More Documents & Publications...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

WA_01_019_GENERAL_ELECTRIC_CORP_Waiver_of_Domestic_and_Forei...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA01019GENERALELECTRICCORPWaiverofDomesticandForei.pdf WA01019GENERALELECTRICCORPWaiverofDomesticandForei.pdf More Documents & Publications...

122

WA_04_020_GENERAL_ELECTRIC_Waiver_of_Domestic_and_Foreign_In...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA04020GENERALELECTRICWaiverofDomesticandForeignIn.pdf WA04020GENERALELECTRICWaiverofDomesticandForeignIn.pdf More Documents & Publications...

123

WA_03_019_GENERAL_MOTORS_CORP_Waiver_of_Domestic_and_Foreign...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

SCORPWaiverofDomesticandForeign.pdf More Documents & Publications WA01019GENERALELECTRICCORPWaiverofDomesticandForei.pdf WA1993020GENERALMOTORSWaiverofDomest...

124

WA_04_075_VARIAN_MEDICAL_SYSTEMS_Waiver_of_Domestic_and_Fore...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

75VARIANMEDICALSYSTEMSWaiverofDomesticandFore.pdf WA04075VARIANMEDICALSYSTEMSWaiverofDomesticandFore.pdf WA04075VARIANMEDICALSYSTEMSWaiverofDomesticandF...

125

WA_1993_041_ROCKETDYNE_AND_LLNL_Waiver_of_the_Governments_U.pdf...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pdf WA1993041ROCKETDYNEANDLLNLWaiveroftheGovernmentsU.pd...

126

WA_97_027_GENERAL_ATOMICS__CORPORATION_Waiver_of_Domestic_an...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EDSOLARSYSTEMSCORPWaiverofDomesticandF.pdf WA01034INGERSOLL-RANDENERGYSYSTEMSWaiverofDomestica.pdf WA00003DUKESOLARENERGYWaiverofDomesticandForeignP.pdf...

127

BayWa Group | Open Energy Information  

Open Energy Info (EERE)

BayWa Group BayWa Group Jump to: navigation, search Name BayWa Group Place Munich, Germany Zip 81925 Sector Services, Solar Product Germany-based company with international operations specialised in wholesale and retail and in providing services. The company is also active in the biofuel and solar sectors. Coordinates 48.136415°, 11.577531° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":48.136415,"lon":11.577531,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

128

,"Sumas, WA Natural Gas Pipeline Imports From Canada (MMcf)"  

U.S. Energy Information Administration (EIA) Indexed Site

Of Series","Frequency","Latest Data for" ,"Data 1","Sumas, WA Natural Gas Pipeline Imports From Canada (MMcf)",1,"Annual",2012 ,"Release Date:","172014" ,"Next...

129

Fourth Annual SECA Meeting - Seattle, WA  

NLE Websites -- All DOE Office Websites (Extended Search)

Fourth Annual SECA Meeting - Seattle, WA Fourth Annual SECA Meeting - Seattle, WA April 15-16, 2003 Table of Contents Disclaimer Papers and Presentations Expanded Applications of SECA Fuel Cells SECA Industrial Team Reports Military Applications of Fuel Cells Technology Highlights Environmental Considerations Disclaimer This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government or any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.

130

Hanford, WA Selected as Plutonium Production Facility | National Nuclear  

National Nuclear Security Administration (NNSA)

Hanford, WA Selected as Plutonium Production Facility | National Nuclear Hanford, WA Selected as Plutonium Production Facility | National Nuclear Security Administration Our Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Continuing Management Reform Countering Nuclear Terrorism About Us Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Media Room Congressional Testimony Fact Sheets Newsletters Press Releases Speeches Events Social Media Video Gallery Photo Gallery NNSA Archive Federal Employment Apply for Our Jobs Our Jobs Working at NNSA Blog Home > About Us > Our History > NNSA Timeline > Hanford, WA Selected as Plutonium Production Facility Hanford, WA Selected as Plutonium Production Facility January 16, 1943 Hanford, WA

131

RECIPIENT:WA Department of Commerce STATE: WA PROJECT Van Dyk Dairy Anaerobic Digester  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

of5 of5 RECIPIENT:WA Department of Commerce STATE: WA PROJECT Van Dyk Dairy Anaerobic Digester TITLE: Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number cm Number DE-EE0000139 GF0-10-604 Based on my review oftbe information concerning the proposed action, as NEPA CompUance Officer (authorized under DOE Order 451.1A), I have made the foUowing determination: cx, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and demand studies), and dissemination (including, but not limited to, document mailings, publication, and distribution;

132

WA_00_013_GENECOR_INTERNATIONAL_Waiver_of_US_Competitiveness...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

& Publications WA01008NOVOZYMEBIOTECHWaiverofDomesticandForeignPa.pdf WA05006ABENGOABIOENERGYCORPORATIONWaiverofDomestica.pdf Class Patent Waiver W(C)2012-004...

133

WA_01-012_DETROIT_DIESEL_Waiver_of_Domestic_and_Foreign_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

-012DETROITDIESELWaiverofDomesticandForeignRigh.pdf WA01-012DETROITDIESELWaiverofDomesticandForeignRigh.pdf WA01-012DETROITDIESELWaiverofDomesticandForeign...

134

WA_1995_039_USABC_Waiver_of_Domestic_and_Foreign_Rights_Unde...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ofDomesticandForeignRightsUnde.pdf More Documents & Publications WA1993032FORDMOTORCOMPANYWaiverofDomesticandForeig.pdf WA97038FORDMOTORCOMPANYWaiverofDomes...

135

WA_01-016_FORD_MOTOR_CO_Waive_of_Domestic_and_Foreign_Invent...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1-016FORDMOTORCOWaiveofDomesticandForeignInvent.pdf WA01-016FORDMOTORCOWaiveofDomesticandForeignInvent.pdf WA01-016FORDMOTORCOWaiveofDomesticandForeign...

136

Pages that link to "Category:Seattle, WA" | Open Energy Information  

Open Energy Info (EERE)

Share this page on Facebook icon Twitter icon Pages that link to "Category:Seattle, WA" Category:Seattle, WA Jump to: navigation, search What links here Page:...

137

WA_03_046_INTERMAGNETICS_GENERAL_CORP_Waiver_of_Domestic_and...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

IGC-SUPERPOWERLLCWaiverofDomesticandForeign.pdf WA03028SUPERPOWERINCWaiverofPatentRightsUnderaDOE.pdf WA99008DUPONTSUPERCONDUCTIVITYWaiverofUSandForeign...

138

WA_03_001_CHEVRON_TEXACO_Waiver_of_Domestic_and_Foreign_Pate...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

01CHEVRONTEXACOWaiverofDomesticandForeignPate.pdf WA03001CHEVRONTEXACOWaiverofDomesticandForeignPate.pdf WA03001CHEVRONTEXACOWaiverofDomesticandForeignP...

139

WA_1993_043_DETROIT_DEISEL_CORPORATION_Waiver_of_U.S._and_Fo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

43DETROITDEISELCORPORATIONWaiverofU.S.andFo.pdf WA1993043DETROITDEISELCORPORATIONWaiverofU.S.andFo.pdf WA1993043DETROITDEISELCORPORATIONWaiverofU.S.andF...

140

WA_1993_034_CONSOLIDATED_NATURAL_GAS_(CNG)_Waiver_of_Domesti...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1993034CONSOLIDATEDNATURALGAS(CNG)WaiverofDomesti.pdf WA1993034CONSOLIDATEDNATURALGAS(CNG)WaiverofDomesti.pdf WA1993034CONSOLIDATEDNATURALGAS(CNG)Waiverof...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

WA_02_032_DOW_CHEMICAL_CO_Waiver_of_Domestic_and_Foreign_Pat...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

32DOWCHEMICALCOWaiverofDomesticandForeignPat.pdf WA02032DOWCHEMICALCOWaiverofDomesticandForeignPat.pdf WA02032DOWCHEMICALCOWaiverofDomesticandForeign...

142

WA_1993_007_DOW_CHEMICAL_COMPANY_Waiver_of_U.S._and_Foreign_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1993007DOWCHEMICALCOMPANYWaiverofU.S.andForeign.pdf WA1993007DOWCHEMICALCOMPANYWaiverofU.S.andForeign.pdf WA1993007DOWCHEMICALCOMPANYWaiverofU.S.andF...

143

WA_01_002_CREE_LIGHTING_Waiver_of_Domestic_and_Foreign_Inven...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2CREELIGHTINGWaiverofDomesticandForeignInven.pdf WA01002CREELIGHTINGWaiverofDomesticandForeignInven.pdf WA01002CREELIGHTINGWaiverofDomesticandForeignInv...

144

WA_02_005_LUMILEDS_LIGHTING_Waiver_of_Domestic_and_Foreign_I...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2005LUMILEDSLIGHTINGWaiverofDomesticandForeignI.pdf WA02005LUMILEDSLIGHTINGWaiverofDomesticandForeignI.pdf WA02005LUMILEDSLIGHTINGWaiverofDomesticandFor...

145

WA_02_009_CONSOL_ENERGY_Multi_Pollutant_Emissions_Control-CL...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

02009CONSOLENERGYMultiPollutantEmissionsControl-CL.pdf WA02009CONSOLENERGYMultiPollutantEmissionsControl-CL.pdf WA02009CONSOLENERGYMultiPollutantEmissionsCon...

146

WA_06_021_UTC_FUEL_CELLS_LLC_Waiver_of_Patent_Rights_Under_a...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1UTCFUELCELLSLLCWaiverofPatentRightsUndera.pdf WA06021UTCFUELCELLSLLCWaiverofPatentRightsUndera.pdf WA06021UTCFUELCELLSLLCWaiverofPatentRightsUnder...

147

WA_02_039_SHELL_SOLAR_SYSTEMS_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

39SHELLSOLARSYSTEMSWaiverofPatentRightsUnder.pdf WA02039SHELLSOLARSYSTEMSWaiverofPatentRightsUnder.pdf WA02039SHELLSOLARSYSTEMSWaiverofPatentRightsUnd...

148

WA_04_032_CARGILL_Waiver_of_Patent_Rights_under_PLATFORM_CHE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CARGILLINCWaiverofPatentRightsUnderACoopA.pdf WA04033CARGILLWaiverofPatentRightstoCARGILLDOWNL.pdf WA03032RWESCHOTTSOLARINCWaiverofPatentRightsUnder...

149

WA_03_032_RWE_SCHOTT_SOLAR_INC_Waiver_of_Patent_Rights_Under...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

32RWESCHOTTSOLARINCWaiverofPatentRightsUnder.pdf WA03032RWESCHOTTSOLARINCWaiverofPatentRightsUnder.pdf WA03032RWESCHOTTSOLARINCWaiverofPatentRightsUn...

150

WA_06_016_BP_SOLAR_INTERNATIONAL_Waiver_of_Patent_Rights_Und...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6BPSOLARINTERNATIONALWaiverofPatentRightsUnd.pdf WA06016BPSOLARINTERNATIONALWaiverofPatentRightsUnd.pdf WA06016BPSOLARINTERNATIONALWaiverofPatentRightsU...

151

WA_05_061_CATERPILLAR_INC_Waiver_of_Patent_Rihts_to_Inventio...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

61CATERPILLARINCWaiverofPatentRihtstoInventio.pdf WA05061CATERPILLARINCWaiverofPatentRihtstoInventio.pdf WA05061CATERPILLARINCWaiverofPatentRihtstoInven...

152

WA_04_007_OSHKOSH_TRUCK_CORP_Waiver_of_Patent_Rights_Under_N...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

07OSHKOSHTRUCKCORPWaiverofPatentRightsUnderN.pdf WA04007OSHKOSHTRUCKCORPWaiverofPatentRightsUnderN.pdf WA04007OSHKOSHTRUCKCORPWaiverofPatentRightsUnde...

153

WA_02_055_PRAXAIR_Waiver_of_Domestic_and_Foreign_Patent_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA02055PRAXAIRWaiverofDomesticandForeignPatentRi...

154

WA_04_067_CATRPILLAR_INC_Waiver_of_Patent_Rights_to_Inventio...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

67CATRPILLARINCWaiverofPatentRightstoInventio.pdf WA04067CATRPILLARINCWaiverofPatentRightstoInventio.pdf WA04067CATRPILLARINCWaiverofPatentRightstoInven...

155

WA_03_022_DELPHI_AUTO_SYSTEMS_Waiver_of_Patent_Rights_to_Inv...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2DELPHIAUTOSYSTEMSWaiverofPatentRightstoInv.pdf WA03022DELPHIAUTOSYSTEMSWaiverofPatentRightstoInv.pdf WA03022DELPHIAUTOSYSTEMSWaiverofPatentRightstoI...

156

WA_02_043_EMCORE_CORP_Waiver_of_Patent_Rights_Under_A_Subcon...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3EMCORECORPWaiverofPatentRightsUnderASubcon.pdf WA02043EMCORECORPWaiverofPatentRightsUnderASubcon.pdf WA02043EMCORECORPWaiverofPatentRightsUnderASubc...

157

WA_02_051_AQUA_CHEM_INC_Waiver_of_Patent_Rights_Under_A_Subc...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1AQUACHEMINCWaiverofPatentRightsUnderASubc.pdf WA02051AQUACHEMINCWaiverofPatentRightsUnderASubc.pdf WA02051AQUACHEMINCWaiverofPatentRightsUnderASu...

158

WA_00_008_PLUG_POWER_Waiver_of_Patent_Rights_in_Performance_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0008PLUGPOWERWaiverofPatentRightsinPerformance.pdf WA00008PLUGPOWERWaiverofPatentRightsinPerformance.pdf WA00008PLUGPOWERWaiverofPatentRightsinPerfor...

159

WA_05_026_GE_NUCLEAR_ENERGY_Waiver_of_Patent_Rights_Under_a_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6GENUCLEARENERGYWaiverofPatentRightsUndera.pdf WA05026GENUCLEARENERGYWaiverofPatentRightsUndera.pdf WA05026GENUCLEARENERGYWaiverofPatentRightsUnder...

160

WA_05_041_MACK_TRUCKS_INC_Waiver_of_Patent_Rights_to_Inventi...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1MACKTRUCKSINCWaiverofPatentRightstoInventi.pdf WA05041MACKTRUCKSINCWaiverofPatentRightstoInventi.pdf WA05041MACKTRUCKSINCWaiverofPatentRightstoInven...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

WA_03_027_SUPERPOWER_INC_Waiver_of_Patent_Rights_Under_a_DOE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7SUPERPOWERINCWaiverofPatentRightsUnderaDOE.pdf WA03027SUPERPOWERINCWaiverofPatentRightsUnderaDOE.pdf WA03027SUPERPOWERINCWaiverofPatentRightsUnderaD...

162

WA_04_058_SOLUTIA_INC_Waiver_of_Patent_Rights_Under_a_DOE_Co...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8SOLUTIAINCWaiverofPatentRightsUnderaDOECo.pdf WA04058SOLUTIAINCWaiverofPatentRightsUnderaDOECo.pdf WA04058SOLUTIAINCWaiverofPatentRightsUnderaDOE...

163

WA_04_031_ROHM_AND_HAAS_Waiver_of_Patent_Rights_under_NEW_SU...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

31ROHMANDHAASWaiverofPatentRightsunderNEWSU.pdf WA04031ROHMANDHAASWaiverofPatentRightsunderNEWSU.pdf WA04031ROHMANDHAASWaiverofPatentRightsunderNEW...

164

WA_05_009_LUCENT_TECHNOLOGIES_INC_Waiver_of_Patent_Rights_Un...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

09LUCENTTECHNOLOGIESINCWaiverofPatentRightsUn.pdf WA05009LUCENTTECHNOLOGIESINCWaiverofPatentRightsUn.pdf WA05009LUCENTTECHNOLOGIESINCWaiverofPatentRights...

165

WA_04_061_ROHM_AND_HAAS_COMPANY_Waiver_of_Patent_Rights_Unde...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

61ROHMANDHAASCOMPANYWaiverofPatentRightsUnde.pdf WA04061ROHMANDHAASCOMPANYWaiverofPatentRightsUnde.pdf WA04061ROHMANDHAASCOMPANYWaiverofPatentRightsU...

166

WA_06_009_UNIVERSITY_OF_MINNESOTA_Waiver_of_Patent_Rights--W...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9UNIVERSITYOFMINNESOTAWaiverofPatentRights--W.pdf WA06009UNIVERSITYOFMINNESOTAWaiverofPatentRights--W.pdf WA06009UNIVERSITYOFMINNESOTAWaiverofPatentRights-...

167

WA_02_047_SOUTHWIRE_CO_Waiver_of_Patent_Rights_Under_A_Coope...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2047SOUTHWIRECOWaiverofPatentRightsUnderACoope.pdf WA02047SOUTHWIRECOWaiverofPatentRightsUnderACoope.pdf WA02047SOUTHWIRECOWaiverofPatentRightsUnderA...

168

WA_04_064_VELOCYS_INC_Waiver_of_Patent_Rgiths_Under_a_DOE_Co...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

64VELOCYSINCWaiverofPatentRgithsUnderaDOECo.pdf WA04064VELOCYSINCWaiverofPatentRgithsUnderaDOECo.pdf WA04064VELOCYSINCWaiverofPatentRgithsUnderaDOE...

169

WA_00_031_HONEYWELL_Waiver_Domestic_and_Foreign_Patent_Right...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

31HONEYWELLWaiverDomesticandForeignPatentRight.pdf WA00031HONEYWELLWaiverDomesticandForeignPatentRight.pdf WA00031HONEYWELLWaiverDomesticandForeignPatentRi...

170

WA_98_010_SOLAREX_Waiver_of_of_Patent_Rights_Under_an_NREL_S...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8010SOLAREXWaiverofofPatentRightsUnderanNRELS.pdf WA98010SOLAREXWaiverofofPatentRightsUnderanNRELS.pdf WA98010SOLAREXWaiverofofPatentRightsUnderan...

171

WA_07_020_GENERAL_ELECTRIC_CO_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0GENERALELECTRICCOWaiverofPatentRightsUnder.pdf WA07020GENERALELECTRICCOWaiverofPatentRightsUnder.pdf WA07020GENERALELECTRICCOWaiverofPatentRightsUnde...

172

WA_05_021_UNITED_TECHNOLOGIES_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1UNITEDTECHNOLOGIESWaiverofPatentRightsUnder.pdf WA05021UNITEDTECHNOLOGIESWaiverofPatentRightsUnder.pdf WA05021UNITEDTECHNOLOGIESWaiverofPatentRightsUnde...

173

WA_06_015_PPG_INDUSTRIES_Waiver_of_Patent_Rights_Under_a_DOE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5PPGINDUSTRIESWaiverofPatentRightsUnderaDOE.pdf WA06015PPGINDUSTRIESWaiverofPatentRightsUnderaDOE.pdf WA06015PPGINDUSTRIESWaiverofPatentRightsUnderaD...

174

WA_04_029_UOP_LLC_Waiver_of_Patent_Rights_under_DISCOVERY_OF...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9UOPLLCWaiverofPatentRightsunderDISCOVERYOF.pdf WA04029UOPLLCWaiverofPatentRightsunderDISCOVERYOF.pdf WA04029UOPLLCWaiverofPatentRightsunderDISCOVERY...

175

WA_04_033_CARGILL_Waiver_of_Patent_Rights_to_CARGILL_DOWN_L.pdf...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3CARGILLWaiverofPatentRightstoCARGILLDOWNL.pdf WA04033CARGILLWaiverofPatentRightstoCARGILLDOWNL.pdf WA04033CARGILLWaiverofPatentRightstoCARGILLDOWNL....

176

WA_03_004_CARGILL_INC_Waiver_of_Patent_Rights_Under_A_Coop_A...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

04CARGILLINCWaiverofPatentRightsUnderACoopA.pdf WA03004CARGILLINCWaiverofPatentRightsUnderACoopA.pdf WA03004CARGILLINCWaiverofPatentRightsUnderACoo...

177

WA_04_047_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

47CATERPILLARINCWaiverofPatentRightstoInventi.pdf WA04047CATERPILLARINCWaiverofPatentRightstoInventi.pdf WA04047CATERPILLARINCWaiverofPatentRightstoInve...

178

WA_04_044_GENERAL_MOTORS_CORP_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

44GENERALMOTORSCORPWaiverofPatentRightsUnder.pdf WA04044GENERALMOTORSCORPWaiverofPatentRightsUnder.pdf WA04044GENERALMOTORSCORPWaiverofPatentRightsUnd...

179

WA_05_027_WESTINGHOUSE_Waiver_of_Patent_Rights_Under_a_Subco...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7WESTINGHOUSEWaiverofPatentRightsUnderaSubco.pdf WA05027WESTINGHOUSEWaiverofPatentRightsUnderaSubco.pdf WA05027WESTINGHOUSEWaiverofPatentRightsUnderaSub...

180

WA_04_037_VELOCCYS_INC_Waiver_of_Patent_Rights_Under_a_DOE_C...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

37VELOCCYSINCWaiverofPatentRightsUnderaDOEC.pdf WA04037VELOCCYSINCWaiverofPatentRightsUnderaDOEC.pdf WA04037VELOCCYSINCWaiverofPatentRightsUnderaDO...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

WA_99_012_AIR_PRODUCTS_Waiver_of_Patent_Rights_Under_AN_NVO_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderANNVO.pdf WA99012AIRPRODUCTSWaiverofPatentRightsUnderA...

182

WA_03_002_3M_COMPANY_Waiver_of_Patent_Rights_Under_A_DOE_Coo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

30023MCOMPANYWaiverofPatentRightsUnderADOECoo.pdf WA030023MCOMPANYWaiverofPatentRightsUnderADOECoo.pdf WA030023MCOMPANYWaiverofPatentRightsUnderAD...

183

WA_04_038_3M_COMPANY__Waiver_of_Patent_Rights_Under_a_DOE_Co...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

83MCOMPANYWaiverofPatentRightsUnderaDOECo.pdf WA040383MCOMPANYWaiverofPatentRightsUnderaDOECo.pdf WA040383MCOMPANYWaiverofPatentRightsUnderaDOE...

184

WA_07_001_EASTMAN_KODAK_COMPANY_Waiver_of_Patent_Rights_Unde...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

01EASTMANKODAKCOMPANYWaiverofPatentRightsUnde.pdf WA07001EASTMANKODAKCOMPANYWaiverofPatentRightsUnde.pdf WA07001EASTMANKODAKCOMPANYWaiverofPatentRightsU...

185

WA_04_071_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1CATERPILLARINCWaiverofPatentRightstoInventi.pdf WA04071CATERPILLARINCWaiverofPatentRightstoInventi.pdf WA04071CATERPILLARINCWaiverofPatentRightstoInven...

186

WA_03_031_UNITED_TECHNOLOGIES_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3031UNITEDTECHNOLOGIESWaiverofPatentRightsUnder.pdf WA03031UNITEDTECHNOLOGIESWaiverofPatentRightsUnder.pdf WA03031UNITEDTECHNOLOGIESWaiverofPatentRights...

187

WA_04_081_GENERAL_ELECTRIC_COMPANY_Waiver_of_Patent_Rights_U...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1GENERALELECTRICCOMPANYWaiverofPatentRightsU.pdf WA04081GENERALELECTRICCOMPANYWaiverofPatentRightsU.pdf WA04081GENERALELECTRICCOMPANYWaiverofPatentRights...

188

WA_06_026_CREE_INC_Waiver_of_Patent_Rights_Under_a_Subcontra...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6CREEINCWaiverofPatentRightsUnderaSubcontra.pdf WA06026CREEINCWaiverofPatentRightsUnderaSubcontra.pdf WA06026CREEINCWaiverofPatentRightsUnderaSubcont...

189

WA_03_028_SUPERPOWER_INC_Waiver_of_Patent_Rights_Under_a_DOE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8SUPERPOWERINCWaiverofPatentRightsUnderaDOE.pdf WA03028SUPERPOWERINCWaiverofPatentRightsUnderaDOE.pdf WA03028SUPERPOWERINCWaiverofPatentRightsUnderaD...

190

WA_01_030_GENERAL_ELECTRIC_CO_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0GENERALELECTRICCOWaiverofPatentRightsUnder.pdf WA01030GENERALELECTRICCOWaiverofPatentRightsUnder.pdf WA01030GENERALELECTRICCOWaiverofPatentRightsUnde...

191

WA_02_048_EATON_CORPORATION_Waviver_of_Patent_Rights_Under_A...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2048EATONCORPORATIONWaviverofPatentRightsUnderA.pdf WA02048EATONCORPORATIONWaviverofPatentRightsUnderA.pdf WA02048EATONCORPORATIONWaviverofPatentRightsU...

192

WA_00_009_ARTHUR_D_LITTLE_Waiver_of_Patent_Rights_in_Perform...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9ARTHURDLITTLEWaiverofPatentRightsinPerform.pdf WA00009ARTHURDLITTLEWaiverofPatentRightsinPerform.pdf WA00009ARTHURDLITTLEWaiverofPatentRightsinPerfo...

193

WA_05_052_CATERPILLAR_INC_Waiver_of_Patent_Rights_to_Inventi...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

52CATERPILLARINCWaiverofPatentRightstoInventi.pdf WA05052CATERPILLARINCWaiverofPatentRightstoInventi.pdf WA05052CATERPILLARINCWaiverofPatentRightstoInve...

194

WA_02_029_CUMMINS_ENGINE_CO_Waiver_of_Patent_Rights_Under_DO...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

29CUMMINSENGINECOWaiverofPatentRightsUnderDO.pdf WA02029CUMMINSENGINECOWaiverofPatentRightsUnderDO.pdf WA02029CUMMINSENGINECOWaiverofPatentRightsUnder...

195

WA_04_011_KENNAMETAL_INC_Waiver_of_Patent_Rights_Under_Subco...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

11KENNAMETALINCWaiverofPatentRightsUnderSubco.pdf WA04011KENNAMETALINCWaiverofPatentRightsUnderSubco.pdf WA04011KENNAMETALINCWaiverofPatentRightsUnderSu...

196

WA_06_027_EASTMAN_KODAK_COMPANY_Waiver_of_Patent_Rights_Unde...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7EASTMANKODAKCOMPANYWaiverofPatentRightsUnde.pdf WA06027EASTMANKODAKCOMPANYWaiverofPatentRightsUnde.pdf WA06027EASTMANKODAKCOMPANYWaiverofPatentRightsUn...

197

WA_2006_007_SOLVEY_OLEXIS_SpA_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2006007SOLVEYOLEXISSpAWaiverofPatentRightsUnder.pdf WA2006007SOLVEYOLEXISSpAWaiverofPatentRightsUnder.pdf WA2006007SOLVEYOLEXISSpAWaiverofPatentRights...

198

WA_06_014_PPG_INDUSTRIES_INC_Waiver_of_Patent_Rights_Under_a...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4PPGINDUSTRIESINCWaiverofPatentRightsUndera.pdf WA06014PPGINDUSTRIESINCWaiverofPatentRightsUndera.pdf WA06014PPGINDUSTRIESINCWaiverofPatentRightsUnder...

199

WA_05_030_BOC_GROUP_Waiver_of_Patent_Rights_Under_a_DOE_Co-O...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0BOCGROUPWaiverofPatentRightsUnderaDOECo-O.pdf WA05030BOCGROUPWaiverofPatentRightsUnderaDOECo-O.pdf WA05030BOCGROUPWaiverofPatentRightsUnderaDOECo...

200

WA_04_008_GENERAL_MOTORS_CORP_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

08GENERALMOTORSCORPWaiverofPatentRightsUnder.pdf WA04008GENERALMOTORSCORPWaiverofPatentRightsUnder.pdf WA04008GENERALMOTORSCORPWaiverofPatentRightsUnd...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

WA_04_016_MACK_TRUCKS_Waiver_of_Patent_Rights_under_NREL_Sub...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

16MACKTRUCKSWaiverofPatentRightsunderNRELSub.pdf WA04016MACKTRUCKSWaiverofPatentRightsunderNRELSub.pdf WA04016MACKTRUCKSWaiverofPatentRightsunderNREL...

202

WA_03_035_CATERPILLAR_INC_Waiver_of_Patent_Rights_Under_a_DO...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3035CATERPILLARINCWaiverofPatentRightsUnderaDO.pdf WA03035CATERPILLARINCWaiverofPatentRightsUnderaDO.pdf WA03035CATERPILLARINCWaiverofPatentRightsUnde...

203

WA_04_079_PRAXAIR_INC_Waiver_of_Patent_Rights_Under_a_Subcon...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

79PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUnderaSubcon.pdf WA04079PRAXAIRINCWaiverofPatentRightsUnderaSub...

204

WA_00_020_PRAXAIR_Waiver_of_Domestic_and_Foreign_Patent_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

20PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA00020PRAXAIRWaiverofDomesticandForeignPatentRigh.pdf WA00020PRAXAIRWaiverofDomesticandForeignPatentR...

205

WA_04_062_ROHM_AND_HAAS_COMPANY_Waiver_of_Patent_Rights_Unde...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2ROHMANDHAASCOMPANYWaiverofPatentRightsUnde.pdf WA04062ROHMANDHAASCOMPANYWaiverofPatentRightsUnde.pdf WA04062ROHMANDHAASCOMPANYWaiverofPatentRightsUn...

206

WA_04_039_HONEYWELL_INTERNATIONAL_Waiver_of_Patent_Rights_Un...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9HONEYWELLINTERNATIONALWaiverofPatentRightsUn.pdf WA04039HONEYWELLINTERNATIONALWaiverofPatentRightsUn.pdf WA04039HONEYWELLINTERNATIONALWaiverofPatentRights...

207

WA_06_018_GENERAL_ELECTRIC_COMPANY_Waiver_of_Patent_Rights_U...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8GENERALELECTRICCOMPANYWaiverofPatentRightsU.pdf WA06018GENERALELECTRICCOMPANYWaiverofPatentRightsU.pdf WA06018GENERALELECTRICCOMPANYWaiverofPatentRights...

208

WA_01_039_PRAXAIR_INC_Waiver_of_Domestic_and_Foreign_Patent_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignPatent.pdf WA01039PRAXAIRINCWaiverofDomesticandForeignPaten...

209

WA_03_026_EI_DUPONT_DENEMOURS_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

26EIDUPONTDENEMOURSWaiverofPatentRightsUnder.pdf WA03026EIDUPONTDENEMOURSWaiverofPatentRightsUnder.pdf WA03026EIDUPONTDENEMOURSWaiverofPatentRightsUnd...

210

WA_04_027_GENERAL_ELECTRIC_Waiver_of_Patent_Rights_for_DISTR...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7GENERALELECTRICWaiverofPatentRightsforDISTR.pdf WA04027GENERALELECTRICWaiverofPatentRightsforDISTR.pdf WA04027GENERALELECTRICWaiverofPatentRightsforDIS...

211

WA_02_033_GENERAL_ELECTRIC_Waiver_of_Patent_Rights_Under_DOE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

33GENERALELECTRICWaiverofPatentRightsUnderDOE.pdf WA02033GENERALELECTRICWaiverofPatentRightsUnderDOE.pdf WA02033GENERALELECTRICWaiverofPatentRightsUnder...

212

WA_06_020_ARIZONA_PUBLIC_SERVICE_Waivier_of_Patent_Rights_Un...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0ARIZONAPUBLICSERVICEWaivierofPatentRightsUn.pdf WA06020ARIZONAPUBLICSERVICEWaivierofPatentRightsUn.pdf WA06020ARIZONAPUBLICSERVICEWaivierofPatentRights...

213

WA_06_029_GENSCAPE_INC_Waiver_of_Patent_Rights_Under_a_Subco...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9GENSCAPEINCWaiverofPatentRightsUnderaSubco.pdf WA06029GENSCAPEINCWaiverofPatentRightsUnderaSubco.pdf WA06029GENSCAPEINCWaiverofPatentRightsUnderaSub...

214

WA_98_007_SOLAREX_Waiver_of_Domestic_and_Foreign_Patent_Righ...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7SOLAREXWaiverofDomesticandForeignPatentRigh.pdf WA98007SOLAREXWaiverofDomesticandForeignPatentRigh.pdf WA98007SOLAREXWaiverofDomesticandForeignPatentRi...

215

WA_03_011_ROCKWELL_AUTOMATION_Waiver_of_Patent_Rights_Under_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRightsUnder.pdf WA03011ROCKWELLAUTOMATIONWaiverofPatentRights...

216

WA_04_059_EATON_CORPORATION_Waiver_of_Patent_Rights_Under_a_...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9EATONCORPORATIONWaiverofPatentRightsUndera.pdf WA04059EATONCORPORATIONWaiverofPatentRightsUndera.pdf WA04059EATONCORPORATIONWaiverofPatentRightsUnder...

217

WA_06_013_McDERMOTT_TECHNOLOGY_INC_Waiver_of_Patent_Rights_t...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3McDERMOTTTECHNOLOGYINCWaiverofPatentRightst.pdf WA06013McDERMOTTTECHNOLOGYINCWaiverofPatentRightst.pdf WA06013McDERMOTTTECHNOLOGYINCWaiverofPatentRights...

218

WA_02_030_OXFORD_INSTRUMENTS_Waiver_of_Patent_Rights_under_D...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

30OXFORDINSTRUMENTSWaiverofPatentRightsunderD.pdf WA02030OXFORDINSTRUMENTSWaiverofPatentRightsunderD.pdf WA02030OXFORDINSTRUMENTSWaiverofPatentRightsunde...

219

WA_1993_020_GENERAL_MOTORS_Waiver_of_Domestic_and_Foreign_Ri...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ORSWaiverofDomesticandForeignRi.pdf More Documents & Publications WA04020GENERALELECTRICWaiverofDomesticandForeignIn.pdf WA03019GENERALMOTORSCORPWaiverofDom...

220

WA_00_003_DUKE_SOLAR_ENERGY_Waiver_of_Domestic_and_Foreign_P...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0003DUKESOLARENERGYWaiverofDomesticandForeignP.pdf WA00003DUKESOLARENERGYWaiverofDomesticandForeignP.pdf WA00003DUKESOLARENERGYWaiverofDomesticandFor...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

WA_1993_038_TEXAS_INSTRUMENTS_INC_Waiver_of_U.S._and_Foreign...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8TEXASINSTRUMENTSINCWaiverofU.S.andForeign.pdf WA1993038TEXASINSTRUMENTSINCWaiverofU.S.andForeign.pdf WA1993038TEXASINSTRUMENTSINCWaiverofU.S.andForeign...

222

W(A)94-022 STATEMENT OF CONSIDERATIONS  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

W(A)94-022 STATEMENT OF CONSIDERATIONS Request by Cummins Power Generation, Inc., for an Advance Waiver of Domestic and Foreign Patent Rights to Inventions made under a contract...

223

BayWa Sunways JV | Open Energy Information  

Open Energy Info (EERE)

JV that specialises in developing, planning and realizing medium-sized to large photovoltaic systems and solar plants. References BayWa & Sunways JV1 LinkedIn Connections...

224

Isotopic Studies of Contaminant Transport at the Hanford Site, WA  

E-Print Network (OSTI)

MR-0132. Westinghouse Hanford Company, Richland WA. Bretz,in recharge at the Hanford Site. Northwest Science. 66:237-M.J. , ed. 2000. Hanford Site groundwater Monitoring

Christensen, J.N.; Conrad, M.E.; DePaolo, D.J.; Dresel, P.E.

2008-01-01T23:59:59.000Z

225

Ga Air Compressor, Ga Air Compressor Products, Ga Air ...  

U.S. Energy Information Administration (EIA)

Ga Air Compressor, You Can Buy Various High Quality Ga Air Compressor Products from Global Ga Air Compressor Suppliers and Ga Air Compressor ...

226

Environmental Protection Agency Environmental Impact Statements; Notice of Availability (Bangor Hydro-Electric Company Northeast Reliability Interconnect Draft Environmental Impact Statement) (DOE/EIS-0372)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

346 346 Federal Register / Vol. 70, No. 165 / Friday, August 26, 2005 / Notices Rating LO. EIS No. 20050278, ERP No. DS-AFS- L36113-WA, Upper Charley Subwatershed Ecosystem Restoration Projects, Proposing to Amend the Umatilla National Forests Land and Resource Management Plan to Incorporate Management for Canada lynx, Pomeroy Ranger District, Umatilla National Forest, Garfield County, WA. Summary: EPA has no objection to the proposed action. Rating LO. Final EISs EIS No. 20050161, ERP No. F-AFS- L65473-OR, Rogue River-Siskiyou National Forest, Special Use Permits for Outfitter and Guide Operations on the Lower Rogue and Lower Rogue and Lower Illinois Rivers, Gold Beach Ranger District, Rogue River-Siskiyou National Forest, Curry County, OR. Summary: No formal comment letter

227

WA S C2 0 01 Handbook of  

E-Print Network (OSTI)

WA S C2 0 01 Handbook of Accreditation #12;The Western Association of Schools and Colleges be terminated, or when the Commission formally acts to terminate accreditation. This Handbook of Accreditation associations and related bodies, see pages 118­119. #12;HANDBOOK OF ACCREDITATION Standards Addressing Core

California at Santa Cruz, University of

228

DOE - Office of Legacy Management -- University of Washington - WA 0-01  

Office of Legacy Management (LM)

Washington - WA 0-01 Washington - WA 0-01 FUSRAP Considered Sites Site: UNIVERSITY OF WASHINGTON (WA.0-01) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Seattle , Washington WA.0-01-1 Evaluation Year: 1987 WA.0-01-1 Site Operations: Research activities involving small quantities of radioactive materials in a controlled environment. WA.0-01-1 Site Disposition: Eliminated - Potential for residual radioactive contamination considered remote - Operating under active NRC license WA.0-01-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: None Indicated WA.0-01-1 Radiological Survey(s): None Indicated Site Status: Eliminated from further consideration under FUSRAP Also see

229

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project...

230

WA_06_017_Waiver_of_The_Govt_US_and_Foreign_Patent_Rights_fo...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7WaiverofTheGovtUSandForeignPatentRightsfo.pdf WA06017WaiverofTheGovtUSandForeignPatentRightsfo.pdf WA06017WaiverofTheGovtUSandForeignPatentRights...

231

File:INL-geothermal-wa.pdf | Open Energy Information  

Open Energy Info (EERE)

wa.pdf wa.pdf Jump to: navigation, search File File history File usage Washington Geothermal Resources Size of this preview: 699 × 600 pixels. Full resolution ‎(4,835 × 4,147 pixels, file size: 3.28 MB, MIME type: application/pdf) Description Washington Geothermal Resources Sources Idaho National Laboratory Authors Patrick Laney; Julie Brizzee Related Technologies Geothermal Creation Date 2003-11-01 Extent State Countries United States UN Region Northern America States Washington File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 12:45, 16 December 2010 Thumbnail for version as of 12:45, 16 December 2010 4,835 × 4,147 (3.28 MB) MapBot (Talk | contribs) Automated upload from NREL's "mapsearch" data

232

GRR/Section 15-WA-a - Air Quality Notice of Construction Permit | Open  

Open Energy Info (EERE)

5-WA-a - Air Quality Notice of Construction Permit 5-WA-a - Air Quality Notice of Construction Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 15-WA-a - Air Quality Notice of Construction Permit 15-WA-a - Air Quality Notice of Construction Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-400-110 WAC 173-400-111 WAC 173-400-171 Triggers None specified This flowchart illustrates the process for obtaining an Air Quality Notice of Construction Permit. The Washington State Department of Ecology (WSDE) oversees the permitting process under WAC 173-400. 15-WA-a - Air Quality Notice of Construction Permit.pdf 15-WA-a - Air Quality Notice of Construction Permit.pdf 15-WA-a - Air Quality Notice of Construction Permit.pdf

233

Biofuels development in Maine: Using trees to oil the wheels of sustainability -Maine news, sports, obituaries, weather -Bangor Daily News http://bangordailynews.com/2013/03/12/opinion/biofuels-development-in-maine-using-trees-to-oil-the-wheels-of-sustain  

E-Print Network (OSTI)

Biofuels development in Maine: Using trees to oil the wheels of sustainability - Maine news, sports, obituaries, weather - Bangor Daily News http://bangordailynews.com/2013/03/12/opinion/biofuels-development-in-maine-using-trees-to-oil-the-wheels-of-sustainability/print/[3/13/2013 1:54:43 PM] Biofuels development

Thomas, Andrew

234

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser  

SciTech Connect

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-30T23:59:59.000Z

235

GRR/Section 9-WA-b - State Environmental Review | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 9-WA-b - State Environmental Review GRR/Section 9-WA-b - State Environmental Review < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-b - State Environmental Review 9-WA-b - State Environmental Review.pdf Click to View Fullscreen Triggers None specified Once the lead agency is determined they are responsible for continuing forward with environmental review. In Washington, environmental review is effectuated through the developer completing an Environmental Checklist which assists the lead agency in determining whether the proposal will likely result in negative impacts on the environment. 9-WA-b - State Environmental Review.pdf 9-WA-b - State Environmental Review.pdf Error creating thumbnail: Page number not in range.

236

GRR/Section 12-WA-a - Live Wildlife Taking Permit | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 12-WA-a - Live Wildlife Taking Permit GRR/Section 12-WA-a - Live Wildlife Taking Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 12-WA-a - Live Wildlife Taking Permit 12-WA-a - Live Wildlife Taking Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Fish and Wildlife Regulations & Policies WAC 232-12-064 Triggers None specified In Washington, it is unlawful to take wildlife from the wild without permission from the Washington State Department of Fish and Wildlife (WDFW). The WDFW issues Live Wildlife Taking Permits under WAC 232-12-064. 12-WA-a - Live Wildlife Taking Permit.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range.

237

Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) June 12, 2013 DOE referred the matter of Fisher & Paykel Appliances residential clothes washer, model WA42T26GW1, to the U.S. Environmental Protection Agency, brand manager for the ENERGY STAR Program, for appropriate action after DOE testing showed that the model does not meet the ENERGY STAR specification. Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) More Documents & Publications Regulatory Burden RFI DOE response to questions from AHAM on the supplemental proposed test procedure for residential clothes washers Scoping Study to Evaluate Feasibility of National Databases for EM&V Documents and Measure Savings: Appendices

238

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX SUMMARY This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG's proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson

239

GRR/Section 3-WA-b - Land Access Overview | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-b - Land Access Overview GRR/Section 3-WA-b - Land Access Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-b - Land Access Overview 3-WA-b - Land Access Overview.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Triggers None specified Any developer that needs access to or through state lands must obtain the appropriate permit or lease. The developer will obtain such permit or lease through the Washington State Department of Natural Resources. 3-WA-b - Land Access Overview.pdf Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Error creating thumbnail: Page number not in range. Flowchart Narrative

240

EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

73: W.A. Parish Post-Combustion CO2 Capture and Sequestration 73: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX EIS-0473: W.A. Parish Post-Combustion CO2 Capture and Sequestration Project (PCCS), Fort Bend County, TX SUMMARY This EIS evaluates the environmental impacts of a proposal to provide financial assistance for a project proposed by NRG Energy, Inc (NRG). DOE selected NRG's proposed W.A. Parish Post-Combustion CO2 Capture and Sequestration Project for a financial assistance award through a competitive process under the Clean Coal Power Initiative Program. NRG would design, construct and operate a commercial-scale carbon dioxide (CO2) capture facility at its existing W.A. Parish Generating Station in Fort Bend County, Texas; deliver the CO2 via a new pipeline to the existing West Ranch oil field in Jackson

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

W(A)94-022 STATEMENT OF CONSIDERATIONS  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4-022 4-022 STATEMENT OF CONSIDERATIONS Request by Cummins Power Generation, Inc., for an Advance Waiver of Domestic and Foreign Patent Rights to Inventions made under a contract entitled "Utility Scale Joint Venture Project," between Cummins Power Generation, Inc. and Sandia National Laboratories (Contract No. AB- 8717B) under Management and Operations Contract DE-AL04-84AL85000, DOE Docket No. W(A)94-022. The petitioner, Cummins Power Generation, Inc., (CPG) has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or first actually reduce to practice in the course of work under the Utility Scale Joint Venture Project between Petitioner and Sandia National Laboratories (Sandia) under contract No. AB- 8717B. Sandia is operated by Sandia Corporation for the U.S. Department of Energy (DOE).

242

W(A)93-013 STATEMENT OF CONSIDERATIONS  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

13 13 STATEMENT OF CONSIDERATIONS Request by AlliedSignal, Inc. for Waiver of Domestic and Foreign Patent Rights to inventions that may arise under Contract No. DE-FC04-93AL94462 between the United States Department of Energy (DOE) and AlliedSignal, Inc. DOE Docket: W(A)93-013 The Petitioner, AlliedSignal, Inc. (AlliedSignal), has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or reduce to practice in the course of work under Contract No. DE-FC04-93AL94462, a Cooperative Agreement with DOE. The project period is May 14, 1993 through May 13, 1996. The Cooperative Agreement covers work in designing a biological/chemical production process for caprolactam using microbial bioprocesses that convert cyclohexane to

243

W(A)93-039 STATEMENT OF CONSIDERATIONS  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

39 39 STATEMENT OF CONSIDERATIONS Request by Air Products and Chemicals, Inc. for Waiver of Domestic and Foreign Patent Rights to inventions that may arise under Contract No. DE-FC04-93AL94461 between the United States Department of Energy (DOE) and Air Products and Chemicals, Inc. DOE Docket: W(A)93-039. The Petitioner, Air Products and Chemicals, Inc., (Air Products) has requested a waiver of all domestic and foreign patent rights to inventions which it may conceive or reduce to practice in the course of work under Contract No. DE-FC04-93AL94461 a Cooperative Agreement with DOE. The contract covers a four phase development program for a recently patented technology developed at Air Products entitled "Novel Selective Surface Flow (SSF T ) Membranes for the

244

Microbial community changes during sustained Cr(VI) reduction at the 100H site in Hanford, WA  

E-Print Network (OSTI)

at the 100H site in Hanford, WA Romy Chakraborty 1 , Eoin Lcontaminated aquifer at the Hanford (WA) 100H site in 2004.Cr(VI) reduction at Hanford, and a comparison of the

Chakraborty, Romy

2010-01-01T23:59:59.000Z

245

Draft environmental impact statement for construction and operation of the proposed Bangor Hydro-Electric Company`s second 345-kV transmission tie line to New Brunswick  

Science Conference Proceedings (OSTI)

This Draft Environmental Impact Statement (DEIS) was prepared by the US Department of Energy (US DOE). The proposed action is the issuance of Presidential Permit PP-89 by DOE to Bangor Hydro-Electric Company to construct and operate a new international transmission line interconnection to New Brunswick, Canada that would consist of an 83.8 mile (US portion), 345-kilovolt (kV) alternating current transmission line from the US-Canadian border at Baileyville, Maine to an existing substation at Orrington, Maine. The principal environmental impacts of the construction and operation of the transmission line would be incremental in nature and would include the conversion of forested uplands (mostly commercial timberlands) and wetlands to right-of-way (small trees, shrubs, and herbaceous vegetation). The proposed line would also result in localized minor to moderate visual impacts and would contribute a minor incremental increase in the exposure of some individuals to electromagnetic fields. This DEIS documents the purpose and need for the proposed action, describes the proposed action and alternatives considered and provides a comparison of the proposed and alternatives routes, and provides detailed information on analyses of the environmental consequences of the proposed action and alternatives, as well as mitigative measures to minimize impacts.

NONE

1993-10-01T23:59:59.000Z

246

EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7: Hanford Site Natural Gas Pipeline, Richland, WA 7: Hanford Site Natural Gas Pipeline, Richland, WA EIS-0467: Hanford Site Natural Gas Pipeline, Richland, WA Summary This EIS will evaluate the environmental impacts of a proposal to enter into a contract with a licensed natural gas supplier in Washington State to construct, operate, and maintain a natural gas pipeline. The pipeline would deliver natural gas to support the Waste Treatment Plant and the 242-A Evaporator operations in the 200 East Area of the Hanford Site. Public Comment Opportunities None available at this time. For more information, contact: Mr. Douglas Chapin, NEPA Document Manager U.S. Department of Energy Richland Operations Office P.O. Box 550, MSIN A5-11 Richland, WA 99352 Documents Available for Download January 23, 2012 EIS-0467: Notice of Intent to Prepare an Environmental Impact Statement and

247

GRR/Section 9-WA-c - State Environmental Impact Statement | Open Energy  

Open Energy Info (EERE)

GRR/Section 9-WA-c - State Environmental Impact Statement GRR/Section 9-WA-c - State Environmental Impact Statement < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-c - State Environmental Impact Statement 9-WA-c - State Environmental Impact Statement.pdf Click to View Fullscreen Triggers None specified The primary purpose of an Environmental Impact Statement (EIS) is to ensure that the Washington State Environmental Policy Act (SEPA) policies are an integral part of the ongoing programs and actions of state and local government. An EIS must provide impartial discussion of significant environmental impacts and must inform decision makers and the public of reasonable alternatives, including mitigation measures that would avoid or minimize adverse impacts or enhance environmental quality. WAC 197-11-400.

248

GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells |  

Open Energy Info (EERE)

GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells GRR/Section 19-WA-f - Water Well NOI for Replacement or Additional Wells < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-f - Water Well NOI for Replacement or Additional Wells 19-WA-f - Water Well NOI for Replacement or Additional Wells.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 90.44.100 Revised Code of Washington 18.104.048 Washington Administrative Code 173-160-151 Triggers None specified A developer seeking to use ground water for an activity may need to drill a new well in a different location than a previous well, drill an additional well at an existing location, or drill a replacement well at the same

249

GRR/Section 11-WA-a - State Cultural Considerations Overview | Open Energy  

Open Energy Info (EERE)

GRR/Section 11-WA-a - State Cultural Considerations Overview GRR/Section 11-WA-a - State Cultural Considerations Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-a - State Cultural Considerations Overview 11-WA-a - State Cultural Considerations Overview.pdf Click to View Fullscreen Triggers None specified The developer will be required to comply with Washington state law when human remains or other cultural resources are discovered on a project site. Cultural resources include both historic and archaeological resources and sites. The discovery of cultural resources may require obtaining a permit and providing public notice and notice to Indian Tribes. Once the necessary procedures have been followed, the developer may continue with the project.

250

GRR/Section 18-WA-a - Underground Storage Tank Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 18-WA-a - Underground Storage Tank Process GRR/Section 18-WA-a - Underground Storage Tank Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 18-WA-a - Underground Storage Tank Process 18-WA-a - Underground Storage Tank Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.76 Washington Administrative Code Chapter 173-360 Triggers None specified Washington has a federally-approved state Underground Storage Tank (UST) program regulated by the Washington State Department of Ecology (WSDE) under Revised Code of Washington Chapter 90.76 and Washington Administrative Code Chapter 173-360. Washington defines an "Underground

251

GRR/Section 5-WA-a - Drilling and Well Development | Open Energy  

Open Energy Info (EERE)

GRR/Section 5-WA-a - Drilling and Well Development GRR/Section 5-WA-a - Drilling and Well Development < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 5-WA-a - Drilling and Well Development 5-WA-a.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Geothermal Act 78.60 RCW Geothermal Rules 332-17 WAC Triggers None specified In Washington geothermal drilling and well development are regulated by the Washington State Department of Natural Resources (WSDNR). Geothermal production wells and core holes deeper than 750ft require the developer go through the whole WSDNR permitting process (which requires a public hearing) and require that the developer complete the State Environmental

252

GRR/Section 3-WA-e - State Right of Way Process | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-e - State Right of Way Process GRR/Section 3-WA-e - State Right of Way Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-e - State Right of Way Process 3-WA-e - State Right of Way Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies RCW 79-36-350 RCW 79-36-520 RCW 79-36-530 Triggers None specified This flowchart illustrates the process for obtaining a right of way over state lands in Washington. The right of way process is overseen by the Washington State Department of Natural Resources (WSDNR). The right of way process is regulated under Revised Code of Washington (RCW) 79-36-350. The developer may apply for an easement, permit or license for a right of

253

GRR/Section 14-WA-d - Section 401 Water Quality Certification | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-d - Section 401 Water Quality Certification GRR/Section 14-WA-d - Section 401 Water Quality Certification < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-d - Section 401 Water Quality Certification 14-WA-d - 401 Water Quality Certification.pdf Click to View Fullscreen Contact Agencies U S Army Corps of Engineers Washington State Department of Ecology Regulations & Policies Revised Statute of Washington Chapter 90.48 Washington Administrative Code Chapter 173-201A Washington Administrative Code 173-225-030 Triggers None specified Developers requiring a Section 404 Dredge and Fill Permit from the U S Army Corps of Engineers (Corps) are required to obtain a Section 401 Water Quality Certification from the state of Washington. The Washington State

254

GRR/Section 19-WA-d - Water Conservancy Board Transfer or Change of Water  

Open Energy Info (EERE)

19-WA-d - Water Conservancy Board Transfer or Change of Water 19-WA-d - Water Conservancy Board Transfer or Change of Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-d - Water Conservancy Board Transfer or Change of Water Right 19-WA-d - Water Conservancy Board Transfer or Change of Water Right.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.80 RCW 90.03.380 90.03.390 RCW 90.44.100 Triggers None specified In 1997, the Washington Legislature authorized the creation of water conservancy boards through the enactment of Revised Code of Washington Chapter 90.80 to expedite the administrative process for voluntary water right transfers within individual counties. In counties where a water

255

GRR/Section 19-WA-e - Water Well Notice of Intent for New Well | Open  

Open Energy Info (EERE)

GRR/Section 19-WA-e - Water Well Notice of Intent for New Well GRR/Section 19-WA-e - Water Well Notice of Intent for New Well < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-e - Water Well Notice of Intent for New Well 19-WA-e - Water Well Notice of Intent for New Well.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 18.104.048 Washington Administrative Code 173-160-151 Triggers None specified A developer seeking to use ground water for an activity may need to drill a new well to access the ground water. When a developer needs to drill a new well, the developer must complete the Notice of Intent (NOI) to Drill a Well form and submit the form to the Washington State Department of Ecology

256

GRR/Section 14-WA-b - State NPDES Permitting Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-b - State NPDES Permitting Process GRR/Section 14-WA-b - State NPDES Permitting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-b - State NPDES Permitting Process 14-WA-b - State NPDES Permitting Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology United States Environmental Protection Agency Regulations & Policies Clean Water Act Chapter 90.48 RCW Chapter 173-216 WAC Triggers None specified Section 402 of the Clean Water Act (CWA) required the Environmental Protection Agency (EPA) to establish the National Pollutant Discharge Elimination System (NPDES) to regulate discharge of pollutants from point sources. In Washington, the EPA has delegated responsibility of NPDES to

257

GRR/Section 4-WA-a - State Exploration Process | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 4-WA-a - State Exploration Process GRR/Section 4-WA-a - State Exploration Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 4-WA-a - State Exploration Process 4-WA-a State Exploration Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Geothermal Act 78.60 RCW Geothermal Rules 332-17 WAC Triggers None specified Geothermal exploration in Washington requires a Geothermal Exploration Permit from the Washington State Department of Natural Resources (WSDNR) for invasive exploration or drilling. Operations that require an exploration or drilling permit will also require the developer to initiate the State Environmental Policy Act (SEPA). In Washington geothermal resources are regulated under Chapter 78.60 RCW

258

GRR/Section 3-WA-d - State Land Lease | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-d - State Land Lease GRR/Section 3-WA-d - State Land Lease < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-d - State Land Lease 3-WA-d - State Land Lease.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies RCW 79-13-020 RCW 79-13-140 RCW 79-13-150 WAC 332-22-030 WAC 332-22-105 WAC 332-22-110 Triggers None specified This flowchart illustrates the process used to lease state lands in Washington. The Washington State Department of Natural Resources (WSDNR) oversees the land leasing process through the Commissioner of Public Lands ("commissioner"). The WSDNR may lease state lands for purposes it deems advisable, including commercial, industrial, residential, agricultural, and

259

GRR/Section 3-WA-c - Utility Franchise or Permit Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 3-WA-c - Utility Franchise or Permit Process GRR/Section 3-WA-c - Utility Franchise or Permit Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-c - Utility Franchise or Permit Process 3-WA-c - Utility Franchise or Permit Process (1).pdf Click to View Fullscreen Contact Agencies Washington State Department of Transportation Regulations & Policies WAC 468-34-060 WAC 468-34-080 WAC 468-34-110 WAC 468-34-160 WAC 468-34-170 Triggers None specified This flowchart illustrates the process of obtaining a franchise or permit through a state highway right of way in Washington State. A utility permit or franchise is required for occupancy of a highway right of way by utility facilities, including private lines. WAC 468-34-160. The process is

260

GRR/Section 19-WA-b - New Water Right Permit Process | Open Energy  

Open Energy Info (EERE)

GRR/Section 19-WA-b - New Water Right Permit Process GRR/Section 19-WA-b - New Water Right Permit Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-b - New Water Right Permit Process 19-WA-b - New Water Right Permit Process.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.03 Revised Code of Washington Chapter 90.44 Triggers None specified Washington uses a prior appropriation system for the distribution of both surface water and ground water rights in which water users receive the right to use water on a "first in time, first in right" basis. Under Washington law, the waters of Washington belong collectively to the public

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

GRR/Section 19-WA-c - Transfer or Change of Water Right | Open Energy  

Open Energy Info (EERE)

9-WA-c - Transfer or Change of Water Right 9-WA-c - Transfer or Change of Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-c - Transfer or Change of Water Right 19-WA-c - Transfer or Change of Water Right.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington 90.03.380 Revised Code of Washington 90.44.100 Revised Code of Washington Chapter 90.80 Triggers None specified Much of Washington's public waters have been accounted for through water right claims, permits, or certificates. As a result, many individuals seeking water rights try to acquire existing water rights already in use or change the use of a current water right they already hold. Certain elements

262

GRR/Section 3-WA-a - State Geothermal Lease | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 3-WA-a - State Geothermal Lease GRR/Section 3-WA-a - State Geothermal Lease < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 3-WA-a - State Geothermal Lease 3-WA-a State Geothermal Lease.pdf Click to View Fullscreen Contact Agencies Washington State Department of Natural Resources Regulations & Policies Chapter 79.14 RCW Chapter 344-12 WAC Triggers None specified The State of Washington is still in the process of developing and finalizing the rules and regulations related to geothermal leases on state lands; however, the Washington State Department of Natural Resources (WSDNR) expects the process to be similar to the process for leasing state lands for oil and natural gas development. The rules and regulations for

263

GRR/Section 11-WA-c - Archaeological Resource Discovery Process | Open  

Open Energy Info (EERE)

GRR/Section 11-WA-c - Archaeological Resource Discovery Process GRR/Section 11-WA-c - Archaeological Resource Discovery Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-c - Archaeological Resource Discovery Process 11-WA-c - Archaeological Resource Discovery Process.pdf Click to View Fullscreen Triggers None specified In the state of Washington, cultural resource concerns are integrated as early as possible into the planning for capital projects and are protected if discovered during construction. Washington defines "Cultural resources" as archeological and historical sites and artifacts, and traditional areas or items of religious, ceremonial and social uses to affected tribes. Washington defines an "Archaeological resource" as any

264

Advance Patent Waiver W(A)2012-005 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5 Advance Patent Waiver W(A)2012-005 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

265

Advance Patent Waiver W(A)2012-013 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

13 Advance Patent Waiver W(A)2012-013 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

266

Advance Patent Waiver W(A)2012-018 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8 Advance Patent Waiver W(A)2012-018 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

267

Advance Patent Waiver W(A)2012-031 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1 Advance Patent Waiver W(A)2012-031 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

268

Advance Patent Waiver W(A)2012-004 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

04 Advance Patent Waiver W(A)2012-004 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

269

Advance Patent Waiver W(A)2012-002 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2 Advance Patent Waiver W(A)2012-002 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

270

Advance Patent Waiver W(A)2012-033 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3 Advance Patent Waiver W(A)2012-033 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

271

Advance Patent Waiver W(A)2012-029 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9 Advance Patent Waiver W(A)2012-029 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

272

Advance Patent Waiver W(A)2012-030 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

30 Advance Patent Waiver W(A)2012-030 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

273

Advance Patent Waiver W(A)2012-016 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6 Advance Patent Waiver W(A)2012-016 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

274

Advance Patent Waiver W(A)2012-019 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9 Advance Patent Waiver W(A)2012-019 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

275

Advance Patent Waiver W(A)2012-032 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

32 Advance Patent Waiver W(A)2012-032 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

276

Advance Patent Waiver W(A)2012-007 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

07 Advance Patent Waiver W(A)2012-007 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to practice by...

277

WA_1994_004_ALUMINUM_COMPANY_OF_AMERICA_Waiver_of_Domestic_a...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MPANYOFAMERICAWaiverofDomestica.pdf More Documents & Publications WA1993034CONSOLIDATEDNATURALGAS(CNG)WaiverofDomesti.pdf ClassWaiverWC-2000-004.pdf DOE M 483.1-1...

278

GRR/Section 19-WA-d - Water Conservancy Board Transfer or Change...  

Open Energy Info (EERE)

19-WA-d - Water Conservancy Board Transfer or Change of Water Right < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of...

279

Advance Patent Waiver W(A)2009-069 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

09-069 Advance Patent Waiver W(A)2009-069 This document waives certain patent rights the Department of Energy (DOE) has to inventions conceived or first actually reduced to...

280

Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1)  

Energy.gov (U.S. Department of Energy (DOE))

DOE referred the matter of Fisher & Paykel Appliances residential clothes washer, model WA42T26GW1, to the EPA for appropriate action after DOE testing showed that the model does not meet the ENERGY STAR specification.

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

GRR/Section 14-WA-c - Underground Injection Control Permit | Open Energy  

Open Energy Info (EERE)

GRR/Section 14-WA-c - Underground Injection Control Permit GRR/Section 14-WA-c - Underground Injection Control Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 14-WA-c - Underground Injection Control Permit 14-WA-c - Underground Injection Control Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Chapter 173-218 WAC Non-endangerment Standard Triggers None specified The Safe Drinking Water Act requires Washington to implement technical criteria and standards to protect underground sources of drinking water from contamination. Under Chapter 173-218 WAC, the Washington State Department of Ecology (WSDE) regulates and permits underground injection control (UIC) wells in Washington. The Environmental Protection Agency

282

GRR/Section 19-WA-a - Water Access and Water Rights Overview | Open Energy  

Open Energy Info (EERE)

9-WA-a - Water Access and Water Rights Overview 9-WA-a - Water Access and Water Rights Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 19-WA-a - Water Access and Water Rights Overview 19-WA-a - Water Access and Water Rights Overview.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies Revised Code of Washington Chapter 90.03 Revised Code of Washington Chapter 90.44 RCW 90.44.050 Triggers None specified Similar to many western states, only a small amount of water is available for appropriation in Washington. As a result, Washington has developed a comprehensive regulatory scheme for the distribution of water rights and use of water in the state. Washington employs a prior appropriation or

283

Ballard Library and Neighborhood Service Center - Seattle, WA by Bohlin Cywinski Jackson Architects [EDRA/Places Awards 2008 -- Design  

E-Print Network (OSTI)

Bohlin Cywinski Jackson Architects / Ballard Library 2008WA Bohlin Cywinski Jackson Architects Seattle residents loveService Center, the architects, Bohlin Cywinski Jackson,

Merlino, Kathryn Rogers

2008-01-01T23:59:59.000Z

284

China Ga Air Compressor, China Ga Air Compressor Products ...  

U.S. Energy Information Administration (EIA)

China Ga Air Compressor, China Ga Air Compressor Suppliers and Manufacturers Directory - Source a Large Selection of Ga Air Compressor Products at ...

285

GRR/Section 15-WA-b - Air Operating Permit | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 15-WA-b - Air Operating Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 15-WA-b - Air Operating Permit 15-WA-b - Air Operating Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-401-500 WAC 173-401-800 WAC 173-401-810 WAC 173-401-735 WAC 173-401-610 Triggers None specified This flowchart illustrates the process for obtaining an Air Operating Permit in Washington State. The Washington State Department of Ecology (WSDE) issues Air Operating Permit under WAC 173-401. An Air Operating Permit is required if a facility has the potential to emit

286

GRR/Section 7-WA-a - Energy Facility Siting Process | Open Energy  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » GRR/Section 7-WA-a - Energy Facility Siting Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 7-WA-a - Energy Facility Siting Process 7-WA-a - Energy Facility Siting Process (1).pdf Click to View Fullscreen Contact Agencies Washington State Energy Facility Site Evaluation Council Regulations & Policies RCW 80.50.60(1) WAC 463-60 RCW 80.50.090(2) WAC 463-30-270 WAC 463-30-320 Triggers None specified Under RCW 80.50.60(1) a developer may not begin construction of a new energy facility site until they obtain Energy Facility Siting certification

287

GRR/Section 11-WA-b - Human Remains Process | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 11-WA-b - Human Remains Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 11-WA-b - Human Remains Process 11-WA-b - Human Remains Process (1).pdf Click to View Fullscreen Triggers None specified This flowchart illustrates the necessary procedure when a developer discovers human remains on a project site. In Washington, every person has the duty to notify the coroner upon the discovery of any human remains in the most expeditious manner possible. The Washington Department of Archaeology and Historic Preservation (DAHP) handles the disposition of non-forensic remains, while the county coroner handles the disposition of

288

EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

49: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA 49: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA EA-1949: Admiralty Inlet Pilot Tidal Project, Puget Sound, WA SUMMARY This EA analyzes the potential environmental effects of a proposal by the Public Utility District No. 1 of Snowhomish County, Washington to construct and operate the Admiralty Inlet Tidal Project. The proposed 680-kilowatt project would be located on the east side of Admiralty Inlet in Puget Sound, Washington, about 1 kilometer west of Whidbey Island, entirely within Island County, Washington. The Federal Energy Regulatory Commission (FERC) is the lead agency. DOE is a cooperating agency. PUBLIC COMMENT OPPORTUNITIES None available at this time. DOCUMENTS AVAILABLE FOR DOWNLOAD August 9, 2013 EA-1949: FERC Notice of Availability Errata Sheet

289

GRR/Section 9-WA-a - State Environmental Overview | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » GRR/Section 9-WA-a - State Environmental Overview < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 9-WA-a - State Environmental Overview 9-WA-a - State Environmental Overview.pdf Click to View Fullscreen Triggers None specified The Washington State Environmental Policy Act (SEPA), chapter 43.21 RCW, requires all governmental agencies to consider the environmental impacts of a proposal before making decisions. Washington uses an Environmental Checklist and Environmental Review (ER) to provide information to help government agencies identify impacts from their proposals and determine whether an Environmental Impact Statement (EIS) is necessary.

290

MEMORANDUM : APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

: APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A) : APPROVAL TO MODIFY ADVANCE WAIVER OF PATENT RIGHTS W(A) 2009-047 GRANTED FOR US SOLAR HOLDINGS LLC UNDER AGREEMENT NO. DE-FC36-08G018 155 US Solar Holdings LLC ("US Solar") has requested that the Department of Energy ("DOE") modify or clarify the cost share requirements set forth in the statement of considerations for the granted advance patent waiver W(A) 2009-047. Specifically, the statement of considerations, as originally granted, states the following: The total cost of the award is approximately $4 million with the Petitioner providing about 50% cost sharing. This waiver is contingent upon the Petitioner maintaining, in aggregate, the above cost sharing percentage over the course of the agreement. Rather than just provide an aggregate cost share requirement of 50% for the agreement, US Solar

291

GRR/Section 18-WA-b - Dangerous Waste Permit | Open Energy Information  

Open Energy Info (EERE)

GRR/Section 18-WA-b - Dangerous Waste Permit GRR/Section 18-WA-b - Dangerous Waste Permit < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 18-WA-b - Dangerous Waste Permit 18-WA-b - Dangerous Waste Permit.pdf Click to View Fullscreen Contact Agencies Washington State Department of Ecology Regulations & Policies WAC 173-303-020 WAC 173-303-060 WAC 173-303-070 WAC 173-303-071 WAC 173-303-072 WAC 173-303-081 WAC 173-303-082 WAC 173-303-090 WAC 173-303-100 WAC 173-303-110 WAC 173-303-140 WAC 173-303-220 WAC 173-303-281 WAC 173-303-282 WAC 173-303-803 WAC 173-303-845 Triggers None specified The Washington State Department of Ecology (WSDE) oversees the permitting process for dangerous and solid waste. In Washington, a developer must obtain a permit if they handle dangerous waste and solid waste and are

292

W(A)-02-009, CONSOL ENERGY, INC. CLOSED PER INSTRUCTIONS FROM  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

-02-009, CONSOL ENERGY, INC. CLOSED PER INSTRUCTIONS FROM MIKE HOFFMAN ON 8262003. SEE W(A)-02-053. JPN 08 2002 07:00 FR IPL DOE CH 630 252 2779 TO AGCP-HQ P.1010 * * Hi Katie,...

293

Qi-Wa, a problem that has plagued Chinese scrolls for millenniums  

E-Print Network (OSTI)

Qi-Wa refers to the up curl on the lengths of handscrolls and hanging scrolls, which has troubled Chinese artisans and emperors for as long as the art of painting and calligraphy exists. This warp is unwelcomed not only for aesthetic reasons, but its potential damage to the fiber and ink. Although it is generally treated as a part of the cockling and curling due to climate, mounting procedures, and conservation conditions, we emphasize that the intrinsic curvature incurred from the storage is in fact the main cause of Qi-Wa. The Qi-Wa height is determined by experiments to obey scaling relations with the length, width, curvature, and thickness of the scroll, which are supported by Molecular Dynamics Simulation and theoretic derivations. This understanding helps us come up with plausible remedies to mitigate Qi-Wa. All proposals are tested on real mounted paper and in simulations. Due to the general nature of this warp, we believe the lessons learnt from studying ancient Chinese scrolls can be applied to moder...

Chou, Ming-Han; Wang, Yi-Ping; Hong, Sun-Hsin; Hong, Tzay-Ming

2013-01-01T23:59:59.000Z

294

Bangor, Maine: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

011821°, -68.7778138° 011821°, -68.7778138° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":44.8011821,"lon":-68.7778138,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

295

Testing Buda-Lund hydro model on particle correlations and spectra in NA44, WA93 and WA98 heavy ion experiments  

E-Print Network (OSTI)

Analytic and numerical approximations to a hydrodynamical model describing longitudinally expanding, cylindrically symmetric, finite systems are fitted to preliminary NA44 data measured in 200 AGeV central $S + Pb$ reactions. The model describes the measured spectra and HBT radii of pions, kaons and protons, simultaneously. The source is characterized by a central freeze-out temperature of T_0 = 154 +/- 8 +/- 11 MeV, a "surface" temperature of T_r = 107 +/- 28 +/- 18 MeV and by a well-developed transverse flow, = 0.53 +/- 0.17 +/- 0.11. The transverse geometrical radius and the mean freeze-out time are found to be R_G = 5.4 +/- 0.9 +/- 0.7 fm and tau_0 = 5.1 +/- 0.3 +/- 0.3 fm/c, respectively. Fits to preliminary WA93 200 AGeV S + Au and WA98 158 AGeV Pb + Pb data dominated by pions indicate similar model parameters. The absolute normalization of the measured particle spectra together with the experimental determination of both the statistical and the systematic errors were needed to obtain successful fits.

A. Ster; T. Csorgo; B. Lorstad

1998-09-28T23:59:59.000Z

296

Anemometer Data (Wind Speed, Direction) for Quinault #3, WA (2004 - 2005) |  

Open Energy Info (EERE)

Quinault #3, WA (2004 - 2005) Quinault #3, WA (2004 - 2005) Dataset Summary Description Wind data collected from Quinault Indian Reservation in Washington from an anemometer as part of the Native American anemometer loan program. Monthly mean wind speed is available for 2004 through 2005, as is wind direction and turbulence data. Data is reported from a height of 20 m. The data was originally made available by Wind Powering America, a DOE Office of Energy Efficiency & Renewable Energy (EERE) program. A dynamic map displaying all available data from DOE anemometer loan programs is available http://www.windpoweringamerica.gov/anemometerloans/projects.asp. Source EERE Date Released December 02nd, 2010 (4 years ago) Date Updated December 02nd, 2010 (4 years ago) Keywords wind

297

EA-1855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

855: Creston-Bell Rebuild Project, Spokane and Lincoln 855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA EA-1855: Creston-Bell Rebuild Project, Spokane and Lincoln Counties, WA Summary This EA (also known as DOE/EA-4406 or DOE/BP-4406) evaluates the potential environmental impacts from rebuilding the Creston-Bell No. 1 115-kV transmission line, including the replacement of wood poles and associated structural components and conductor and access road improvements. The 54-mile long, wood pole line extends from the Bonneville Power Administration (BPA) Creston substation to the BPA Bell substation near Spokane in Lincoln and Spokane Counties, Washington. Additional information about this project is available on the BPA website. Public Comment Opportunities None available at this time. Documents Available for Download

298

Intelligent Sootblowing Demonstration at Texas Glenco's W.A. Parish Plant  

Science Conference Proceedings (OSTI)

Intelligent sootblowing (ISB) optimizes the cleaning of the walls and convection passes of fossil-fired power plants to maintain high heat transfer while keeping steam temperatures and pressures as constant as possible and minimizing erosion or corrosion of tubes. This document is the second in a series of interim reports on the five-year ISB system test and demonstration project at Texas Genco's W.A. Parish plant. It summarizes ISB performance test results, outage inspection findings, and potential enha...

2003-12-09T23:59:59.000Z

299

Ba-Ga (Barium - Gallium)  

Science Conference Proceedings (OSTI)

Ba-Ga crystallographic data...Ba-Ga crystallographic data Phase Composition, wt% Ga Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 10 Ga 4.8 cF 176 Fd m Ba 8 Ga 7 30.8 cP 60 P 2 1 3 BaGa 2 50.4 hP 3 P 6/ mmm BaGa 4 67 tI 10 I 4/ mmm (Ga) 100 hP 2 P 6 3 / mmc...

300

Intelligent Sootblowing Demonstration at Texas Genco's W.A. Parish Plant  

Science Conference Proceedings (OSTI)

Intelligent sootblowing (ISB) optimizes the cleaning of the walls and convection passes of fossil-fired power plants to maintain high heat transfer while keeping steam temperatures and pressures as constant as possible and minimizing erosion or corrosion of tubes. This document is the third in a series of interim reports on the five-year ISB system test and demonstration project at Texas Genco's W.A. Parish plant. Work in 2004 focused on quantifying cost savings associated with the long-term operation of...

2004-12-15T23:59:59.000Z

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

File:EIA-Eastern-OR-WA-BOE.pdf | Open Energy Information  

Open Energy Info (EERE)

Eastern-OR-WA-BOE.pdf Eastern-OR-WA-BOE.pdf Jump to: navigation, search File File history File usage Eastern Oregon and Washington By 2001 BOE Reserve Class Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 460 KB, MIME type: application/pdf) Description Eastern Oregon and Washington By 2001 BOE Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States Oregon, Washington File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 18:00, 20 December 2010 Thumbnail for version as of 18:00, 20 December 2010 1,650 × 1,275 (460 KB) MapBot (Talk | contribs) Automated bot upload

302

File:06-WA-b - Washington Construction Storm Water Permit.pdf | Open Energy  

Open Energy Info (EERE)

File File Edit History Facebook icon Twitter icon » File:06-WA-b - Washington Construction Storm Water Permit.pdf Jump to: navigation, search File File history File usage Metadata File:06-WA-b - Washington Construction Storm Water Permit.pdf Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Go to page 1 2 Go! next page → next page → Full resolution ‎(1,275 × 1,650 pixels, file size: 60 KB, MIME type: application/pdf, 2 pages) File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 15:28, 6 December 2013 Thumbnail for version as of 15:28, 6 December 2013 1,275 × 1,650, 2 pages (60 KB) Alevine (Talk | contribs) 15:25, 6 December 2013 Thumbnail for version as of 15:25, 6 December 2013 1,275 × 1,650, 2 pages (60 KB) Alevine (Talk | contribs)

303

Ga-Zr (Gallium - Zirconium)  

Science Conference Proceedings (OSTI)

Ga-Zr crystallographic data...Ga 5 Zr 3 44.0 oC 32 Cmcm Ga 3 Zr 2 47 oF 40 Fdd 2 βGaZr 56.7 ? ? αGaZr 56.7 tI 16 I 4 1 / amd Ga 4 Zr 5 62.1 hP 18 P 6 3 / mcm Ga 2 Zr 3 66 tP 10 P 4/ mbm Ga 3 Zr 5 68.6 hP 16 P 6 3 / mcm GaZr 2 72.4 tI 12 I 4/ mcm (βZr) ~94 to 100 cI 2 Im m (αZr) 99.4 to 100 hP 2 P 6 3 / mmc...

304

DOE Challenge Home Case Study TC Legend, Seattle, WA, Custom Home  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

TC Legend TC Legend Homes Seattle, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

305

Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION BLOCK GRANTS NEPA COMPLIANCE FORM  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

it: EE 000 0853 it: EE 000 0853 Recipient: County of Kitsap, WA ENERGY EFFICIENCY AND CONSERVATION BLOCK GRANTS NEPA COMPLIANCE FORM Activities Determination/ Categorical Exclusion Reviewer's Specific Instructions and Rationale (Restrictions and Allowable Activity) Kitsap Built Green Projects B5.1 Waste Stream, Engineering, and Historic Preservation clauses. Kitsap County Building Retrofits and Energy Efficiency Upgrades (Green Jobs Initiative) B5.1 except geothermal Waste Stream, Engineering, and Historic Preservation clauses. Prohibited: Any implementation of geothermal projects/construction activities without NEPA approval from DOE. Geothermal projects are to be provided to DOE for analysis. Energy Efficiency Implementation and Strategy A9, All, B5.1 None Energy Services Corps A9, All, B5.1

306

DOE Challenge Home Case Study, Dwell Development, Seattle, WA, Systems Home  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Dwell Dwell Development Seattle, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

307

Microsoft Word - CX-AccessRoads-KingCoWA-FY13_WEB.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

22, 2013 22, 2013 REPLY TO ATTN OF: KEPR-Covington SUBJECT: Environmental Clearance Memorandum Rick Ross Engineer - TELF-TPP-3 Proposed Action: Covington District Culvert Replacements Categorical Exclusion Applied (from Subpart D, 10 C.F.R. Part 1021): Appendix B1.3, Routine Maintenance Location: King County, WA Proposed by: Bonneville Power Administration (BPA) Description of the Proposed Action: BPA is proposing to replace existing culverts at 12 access road stream crossings that present barriers to fish passage. These improvements will be made on BPA easement access roads within DNR owned and managed lands. BPA will make these improvements by installing new fish friendly culverts and/or bridges at each stream crossing. The current stream crossings do not meet DNR fish passage standards that will be in

308

DOE Challenge Home Case Study, Clifton View Homes, Coupeville, WA, Systems Home  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Clifton View Clifton View Homes Coupeville, WA BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

309

Measurements of Turbulence at Two Tidal Energy Sites in Puget Sound, WA  

SciTech Connect

Field measurements of turbulence are pre- sented from two sites in Puget Sound, WA (USA) that are proposed for electrical power generation using tidal current turbines. Rapidly sampled data from multiple acoustic Doppler instruments are analyzed to obtain statistical mea- sures of fluctuations in both the magnitude and direction of the tidal currents. The resulting turbulence intensities (i.e., the turbulent velocity fluctuations normalized by the harmonic tidal currents) are typically 10% at the hub- heights (i.e., the relevant depth bin) of the proposed turbines. Length and time scales of the turbulence are also analyzed. Large-scale, anisotropic eddies dominate the energy spectra, which may be the result of proximity to headlands at each site. At small scales, an isotropic turbulent cascade is observed and used to estimate the dissipation rate of turbulent kinetic energy. Data quality and sampling parameters are discussed, with an emphasis on the removal of Doppler noise from turbulence statistics.

Thomson, Jim; Polagye, Brian; Durgesh, Vibhav; Richmond, Marshall C.

2012-06-05T23:59:59.000Z

310

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

311

Polarization-engineered GaN/InGaN/GaN tunnel diodes  

E-Print Network (OSTI)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

2010-08-24T23:59:59.000Z

312

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

313

Application of a modified denitrifying bacteria method for analyzing groundwater and vadose zone pore water nitrate at the Hanford Site, WA, USA.  

E-Print Network (OSTI)

zone pore water nitrate at the Hanford Site, WA, USA. Woods,and Conrad, Mark The Hanford Site in southern WashingtonL have been reported for Hanford groundwaters, where nitrate

Woods, Katharine N.; Singleton, Michael J.; Conrad, Mark

2003-01-01T23:59:59.000Z

314

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications are invited for a postdoctoral position in the Gravity Group at the Department of Physics  

E-Print Network (OSTI)

A WASHINGTON STATE UNIVERSITY POSTDOCTORAL POSITION FOR WORK AT LIGO HANFORD, WA Applications characterization for the Advanced Laser Interferometer Gravitational wave Observatory (LIGO) at the Hanford site characterization at the LIGO Hanford observatory. Familiarity with data analysis pipelines for searching

Collins, Gary S.

315

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name GA-SNC Solar Place Nevada Sector Solar Product Nevada-based PV project developer and joint venture of GA-Solar North America and...

316

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

317

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

318

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures  

Science Conference Proceedings (OSTI)

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.

Abramkin, D. S.; Putyato, M. A.; Budennyy, S. A.; Gutakovskii, A. K.; Semyagin, B. R.; Preobrazhenskii, V. V.; Shamirzaev, T. S. [A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Pr. Lavrentyeva 13, 630090 Novosibirsk (Russian Federation); Kolomys, O. F.; Strelchuk, V. V. [V. E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, Pr. Nauki 41, 03028 Kiev (Ukraine)

2012-10-15T23:59:59.000Z

319

General Atomics (GA) Fusion News: A New Spin on Understanding...  

NLE Websites -- All DOE Office Websites (Extended Search)

General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New...

320

Rodefeld Landfill Ga Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

Rodefeld Landfill Ga Biomass Facility Jump to: navigation, search Name Rodefeld Landfill Ga Biomass Facility Facility Rodefeld Landfill Ga Sector Biomass Facility Type Landfill Gas...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

W.A. Parish Post-Combustion CO2 Capture and Sequestration Project, Final Environmental Impact Statement (DOE/EIS-0473)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

W.A. W.A. Parish Post-Combustion CO 2 Capture and Sequestration Project Final Environmental Impact Statement Summary February 2013 DOE/EIS-0473 Office of Fossil Energy National Energy Technology Laboratory INTENTIONALLY LEFT BLANK COVER SHEET Responsible Federal Agency: U.S. Department of Energy (DOE) Title: W.A. Parish Post-Combustion CO 2 Capture and Sequestration Project, Final Environmental Impact Statement (DOE/EIS-0473) Location: Southeastern Texas, including Fort Bend, Wharton, and Jackson counties Contacts: For further information about this Environmental Impact Statement, contact: For general information on the DOE process for implementing the National Environmental Policy Act, contact: Mark W. Lusk U.S. Department of Energy National Energy Technology Laboratory 3610 Collins Ferry Road Morgantown, WV 26507-0880 (304) 285-4145 or Mark.Lusk@netl.doe.gov

322

W.A. Parish Post-Combustion CO2 Capture and Sequestration Project, Final Environmental Impact Statement (DOE/EIS-0473)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

NRG W.A. PARISH PCCS PROJECT NRG W.A. PARISH PCCS PROJECT FINAL ENVIRONMENTAL IMPACT STATEMENT APPENDIX H. BEG MODELING REPORT APPENDIX H BEG MODELING REPORT DOE/EIS-0473 NRG W.A. PARISH PCCS PROJECT FINAL ENVIRONMENTAL IMPACT STATEMENT APPENDIX H. BEG MODELING REPORT INTENTIONALLY LEFT BLANK 1 Reservoir modeling and simulation for estimating migration extents of injectate-CO 2 in support of West Ranch oilfield NEPA/EIS Gulf Coast Carbon Center, Bureau of Economic Geology, Jackson School of Geosciences, The University of Texas at Austin May 4, 2012 Summary It is anticipated that anthropogenic carbon dioxide (CO2-A) will be injected into the deep (5,000-6,000 ft below sea level) subsurface for enhanced oil recovery (EOR) at the West Ranch oilfield beginning in early 2015. The purpose of this report is to present reservoir modeling and simulation

323

Categorical Exclusion Determinations: B1.15 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

May 24, 2011 May 24, 2011 CX-007090: Categorical Exclusion Determination United States Navy Security System Upgrades CX(s) Applied: B1.15, B2.2 Date: 05/24/2011 Location(s): Albuquerque, NM; Kings Bay, GA; Bangor, WA, Georgia, New Mexico, Washington Office(s): NNSA-Headquarters, Sandia Site Office May 10, 2011 CX-007793: Categorical Exclusion Determination Jonesboro Maintenance Facility Additions CX(s) Applied: B1.15 Date: 05/10/2011 Location(s): Arkansas Offices(s): Southwestern Power Administration April 28, 2011 CX-005661: Categorical Exclusion Determination Clean Energy Development Fund - Renewable Energy Program - Candelora Hydro Project CX(s) Applied: B1.15, B5.1 Date: 04/28/2011 Location(s): Pownal, Vermont Office(s): Energy Efficiency and Renewable Energy, National Energy

324

Categorical Exclusion Determinations: New Mexico | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

May 24, 2011 May 24, 2011 CX-007090: Categorical Exclusion Determination United States Navy Security System Upgrades CX(s) Applied: B1.15, B2.2 Date: 05/24/2011 Location(s): Albuquerque, NM; Kings Bay, GA; Bangor, WA, Georgia, New Mexico, Washington Office(s): NNSA-Headquarters, Sandia Site Office May 17, 2011 CX-005885: Categorical Exclusion Determination Routine Monitoring, Maintenance, Geoprobe Well Installation, and Administrative Actions at the Ambrosia Lake, New Mexico, Disposal Site CX(s) Applied: B1.3, B3.1 Date: 05/17/2011 Location(s): Ambrosia Lake, New Mexico Office(s): Legacy Management May 17, 2011 CX-005881: Categorical Exclusion Determination Operation of the Chloride Extraction and Acid Recovery Line at TA-55-4 CX(s) Applied: B6.8 Date: 05/17/2011 Location(s): Los Alamos, New Mexico

325

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

326

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

327

Arrival time and magnitude of airborne fission products from the Fukushima, Japan, reactor incident as measured in Seattle, WA, USA  

E-Print Network (OSTI)

We report results of air monitoring started due to the recent natural catastrophe on 11 March 2011 in Japan and the severe ensuing damage to the Fukushima Dai-ichi nuclear reactor complex. On 17-18 March 2011, we registered the first arrival of the airborne fission products 131-I, 132-I, 132-Te, 134-Cs, and 137-Cs in Seattle, WA, USA, by identifying their characteristic gamma rays using a germanium detector. We measured the evolution of the activities over a period of 23 days at the end of which the activities had mostly fallen below our detection limit. The highest detected activity amounted to 4.4 +/- 1.3 mBq/m^3 of 131-I on 19-20 March.

J. Diaz Leon; D. A. Jaffe; J. Kaspar; A. Knecht; M. L. Miller; R. G. H. Robertson; A. G. Schubert

2011-03-24T23:59:59.000Z

328

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures  

Science Conference Proceedings (OSTI)

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Fan Dongsheng; Yu Shuiqing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Zeng Zhaoquan; Hu Xian; Dorogan, Vitaliy G.; Li Chen; Benamara, Mourad; Hawkridge, Michael E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Johnson, Shane R. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Wang, Zhiming M. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2012-10-29T23:59:59.000Z

329

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

DOE Green Energy (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

330

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells  

E-Print Network (OSTI)

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells I. Friel, C online 20 June 2005 An ultraviolet electroabsorption modulator based on AlGaN/GaN quantum wells is demonstrated. Enhanced excitonic absorption in the quantum wells at around 3.48 eV was achieved using

Moustakas, Theodore

331

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

332

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

333

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures  

Science Conference Proceedings (OSTI)

Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-12-24T23:59:59.000Z

334

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents (OSTI)

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

335

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

336

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells  

E-Print Network (OSTI)

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells Shunfeng Li Cubic InGaN/GaN multi-quantum-wells MQWs with high structural and optical quality are achieved by utilizing freestanding 3C-SiC 001 substrates and optimizing InGaN quantum well growth. Superlattice peaks up

As, Donat Josef

337

passivation of InGaN/GaN nanopillar light emitting diodes.  

E-Print Network (OSTI)

??Recently, InGaN/GaN based blue light emitting diodes (LEDs) have become widely available commercially, but their efficiency is reduced due to the quantum confined Stark effect (more)

Choi, Won

2013-01-01T23:59:59.000Z

338

Detailed Analysis of Temperature Characteristics of InGaP/InGaAs ...  

Science Conference Proceedings (OSTI)

The current-voltage (I-V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. The structures of ...

339

AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy  

SciTech Connect

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

C.A. Wang; C.J. Vineis; D.R. Calawa

2002-02-13T23:59:59.000Z

340

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw compressors, 30-90 kW / 40-125 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

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While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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341

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors ...  

U.S. Energy Information Administration (EIA)

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors, 11-30 kW / 15-40 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

342

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw compressors, 90-160 kW / 125-200 hp.,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading ...

343

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT  

Science Conference Proceedings (OSTI)

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology, Palur Hills (India)

2011-05-15T23:59:59.000Z

344

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

345

Quantized states in homogenous polarized GaInN GaN quantum wells  

E-Print Network (OSTI)

Quantized states in homogenous polarized GaInN GaN quantum wells C. Wetzel1, S. Kamiyama1, H. Amano wells is calculated in a single particle model. The act- ing electric eld in the wells and the band gap-dimensional well layers our approach is based on induction from results obtained at the binary GaN barri- ers

Wetzel, Christian M.

346

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS  

E-Print Network (OSTI)

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS C. Wetzel, T. Takeuchi, H. Amano, and IInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across

Wetzel, Christian M.

347

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells  

E-Print Network (OSTI)

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells Marcus Eickhoff* and Dieter Suter, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding.60.-k; 78.55.Cr; 78.67.De Keywords: ODNMR; Pulsed excitation; Quantum well; GaAs 1. Introduction Nuclear

Suter, Dieter

348

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network (OSTI)

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Recanati, Catherine

349

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
350

TMS P&GA Wired to Washington  

Science Conference Proceedings (OSTI)

P & GA COMMITTEE HOME ... the connection between MSE and such key U.S. initiatives as national security, energy independence, and economic growth.

351

Price of Elba Island, GA Liquefied Natural Gas Total Imports...  

Annual Energy Outlook 2012 (EIA)

Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet)...

352

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

DOE Green Energy (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

353

20121114 Riverton drinking wa...  

Office of Legacy Management (LM)

Where Does My Drinking Water Come From? Where Does My Drinking Water Come From? Riverton, Wyoming, Processing Site F A C T S H E E T ENERGY Legacy Management U.S. DEPARTMENT OF This fact sheet provides information about the Alternative Water Supply System and domestic wells at the Uranium Mill Tailings Radiation Control Act of 1978 Title I processing site at Riverton, Wyoming. The Riverton site is managed by the U.S. Department of Energy Office of Legacy Management. Where Is the Riverton Site? The former Riverton, Wyoming, Processing Site is in Fremont County, 2 miles southwest of the town of Riverton and within the boundaries of the Wind River Indian Reservation (Northern Arapaho and Eastern Shoshone). Why Is It a "Site"? A uranium- and vanadium-ore-processing mill operated on the property from 1958 to 1963. Milling operations created

354

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

355

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

356

Formulation and Characterization of LX-17-2 from new FK 800 binder and WA, ATK, and BAE TATBs  

Science Conference Proceedings (OSTI)

Currently LLNL has no Kel-F 800 or wet-aminated TATB reserves for formulation. Although both materials are soon to be commercially available, their synthesis processes have changed and the explosive must be re-evaluated. In 2000 3M phased out the uses of perfluorooctanoyl (C8) derivatives due to environmental persistence and bioaccumulation issues. A C8 derivative was used as an emulsifier for making Kel F-800. In 2001 Kel F-800 was scheduled to be discontinued and the last Kel F-800 run was made in early 2002. LANL ordered 2M$ worth of Kel-F 800 for reserves and Pantex purchased several hundred pounds to satisfy mock needs. After four years, 3M has decided to introduce a Kel-F 800-like polymer based on a new emulsifier using the same chlorotrifluoroethylene and vinylidene fluoride monomers and emulsion polymerization process. They have produced 3 batches and claim the 'new' FK-800 is indistinguishable from the 'old' Kel-F 800 in any of their testing parameters. In June-July 2006 3M scaled up a batch of about 800 pounds and have test quantities available. We have samples of the new FK-800 for evaluation. Neither wet nor dry-aminated TATB has been synthesized in the US in any significant quantity since about 1985 and significant quantities of LX-17-1 has not been formulated since about 1990. Over the last few years as part of a DOD MANTECH, ATK Thiokol and BAE Holston Army Ammunition Plant (HAAP) have produced moderate quantities of TATB ({approx}5 kg batches) with plans to scale up for DOD applications. Thiokol TATB is polycrystalline with an average particle size of about 40 m (similar to WA TATB) but HAAP TATB is only 5-6 {micro}m (similar to ultrafine). We have obtained small quantities of these materials for evaluation. The project (1) compares new FK-800 with old Kel-F 800 and FK-800 lots currently available at LLNL, (2) compares and characterizes new TATB with old TATB, (3) formulates new FK-800 with wet-aminated TATB and new TATBs in according to HAAP slurry coating procedure into LX-17-2, and (4) evaluates the mechanical and detonation performance characteristics of this insensitive high explosive (IHE). Priorities are to prove that these new materials can be formulated, pressed to density and machined; and that they contain no impurities which might cause compatibility issues. Since 3M, LANL, Pantex and AWE are currently evaluating the new FK-800, we plan to share data rather than repeating their work. Our effort is described.

DePiero, S C; Hoffman, D M

2007-08-03T23:59:59.000Z

357

Wa s h i n g t o n Ma r r i o t t e n Me t r o C e...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Wa s h i n g t o n Ma r r i o t t e n Me t r o C e n t e r F a c u l t a d d e D e r e c h o d e l a U n i v e r s i d a d d e H o w a r d C o n f e r e n c i a y P r o g r a ma d...

358

AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE  

SciTech Connect

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. [Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

2007-04-10T23:59:59.000Z

359

Accelerated aging of GaAs concentrator solar cells  

DOE Green Energy (OSTI)

An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

Gregory, P.E.

1982-04-01T23:59:59.000Z

360

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence  

E-Print Network (OSTI)

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence October 1997; accepted for publication 5 January 1998 Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed

Bowers, John

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Optical injection and coherent control of a ballistic charge current in GaAsAlGaAs quantum wells  

E-Print Network (OSTI)

Optical injection and coherent control of a ballistic charge current in GaAs?AlGaAs quantum wells of Hache´ et al.,2,3 but in this article we report injection into the plane of GaAs/AlGaAs quantum wells specific to quantum wells. Although we expect the underlying physics of injection and control of currents

Sipe,J. E.

362

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

363

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network (OSTI)

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

364

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures  

E-Print Network (OSTI)

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high materials for green, blue, and UV light emitting diodes (LED) [1-2]. It is known that huge piezoelectric

Wetzel, Christian M.

365

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

366

J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

367

STATEM!NT''OF CONSIDEAAT10NS REQUEST n:~!:)lHi/",!!,'fCORPORArIQN FO~ ANADVANClWA1VER OF DOMESTIC AND FOREIGN  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

STATEM!NT''OF CONSIDEAAT10NS STATEM!NT''OF CONSIDEAAT10NS REQUEST n:~!:)lHi/",!!,'fCORPORArIQN FO~ ANADVANClWA1VER OF DOMESTIC AND FOREIGN DOE PROPOSAL NO.OE-EE0000412 W(A} 2009-:060 The OhlipC1'!ve of this project Is the and comt'nercialization of a two-phase soluttofrfQf USe with The 1 lM,C'l_""""P H'tn(;lPI'" PJJ1'l.nn""". refrig1':'rant tooling solution provides certain improvements compared to conventional air-<:ooling syslems and water-cooling systems, The totalantfetpated cost the is $901,678 with the Petitl(};l)er approximately 19.% cost sm:tre, $262,191. Thiswaive(is contingent upo.n the Petitioner rrH~intaining the foregoing cost over tneCQUfse the grant As in its wai'\l\;f petition, the ~etitfoner isa leading global supplier of air conditioning and

368

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

369

Free carrier accumulation at cubic AlGaN/GaN heterojunctions  

Science Conference Proceedings (OSTI)

Cubic Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The experimental potential profile indicates that the unintentionally doped layers show n-type behavior and accumulation of free electrons at the interface with a density of 5.1 x 10{sup 11}/cm{sup 2}, about one order of magnitude less than in wurtzite AlGaN/GaN junctions. A combination of electron holography and cathodoluminescence measurements yields a conduction-to-valence band offset ratio of 5:1 for the cubic AlGaN/GaN interface, which also promotes the electron accumulation. Band diagram simulations show that the donor states in the AlGaN layer provide the positive charges that to a great extent balance the two-dimensional electron gas.

Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Tschumak, E.; Zado, A.; As, D. J. [Department of Physics, Universitaet Paderborn, D-33098 Paderborn (Germany)

2012-04-02T23:59:59.000Z

370

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and ...

371

Plasma Damage in p-GaN  

SciTech Connect

The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.

Cao, X.A.; Dang, G.T.; Hickman, R.A.; Pearton, S.J.; Ren, F.; Shul, R.J.; Van Hove, J.M.; Zhang, A.P.; Zhang, L.

1999-06-30T23:59:59.000Z

372

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

373

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits  

Science Conference Proceedings (OSTI)

A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. ...

Choong H. Hyun; M. S. Shur; N. C. Cirillo

2006-11-01T23:59:59.000Z

374

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

375

Nanocrystals cylindrical microcavities exploiting thin-walled InGaAs/GaAs microtubes  

Science Conference Proceedings (OSTI)

This paper relies on the design and fabrication of CdSe/ZnS core/shell colloidal nanocrystals (NCs) cylindrical microcavities for microphotonics applications. The fabrication technology relies on the release of the strain in strained heterostructures, ... Keywords: Colloidal nanocrystals, InGaAs/GaAs microtubes, Strained multilayer

C. Giordano; M. T. Todaro; A. Salhi; L. Martiradonna; I. Viola; A. Passab; L. Carbone; G. Gigli; A. Passaseo; M. De Vittorio

2007-05-01T23:59:59.000Z

376

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

377

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

DOE Green Energy (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

378

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED  

Science Conference Proceedings (OSTI)

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm{sup 2}V{sup -1}s{sup -1} at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

Broxtermann, D.; Sivis, M.; Malindretos, J.; Rizzi, A. [IV. physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2012-03-15T23:59:59.000Z

379

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

380

GaN Nanopore Arrays: Fabrication and Characterization  

E-Print Network (OSTI)

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

Wang, Yadong

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While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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381

Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape ...  

Science Conference Proceedings (OSTI)

... Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape Memory Alloys. Peng Zhao (Dept. of Materials Science and ...

382

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

383

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

384

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

385

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment  

E-Print Network (OSTI)

Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ...

Palacios, Tomas

386

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

387

GaAs photoconductive semiconductor switch  

DOE Patents (OSTI)

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

388

GaN: Defect and Device Issues  

SciTech Connect

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

1998-11-09T23:59:59.000Z

389

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network (OSTI)

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

390

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Fainman, "Influence of chlorine on etched sidewalls inFainman, Influence of chlorine on etched sidewalls inthe RIBE of GaAs with chlorine (Cl 2 ), ion beam sputtering

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

391

K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

392

JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

393

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes  

E-Print Network (OSTI)

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

Cornelius S. Bausch; Aune Koitme; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

2013-05-06T23:59:59.000Z

394

Recent progress in InGaAsSb/GaSb TPV devices  

DOE Green Energy (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

395

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

396

GaNPAs Solar Cells Lattice-Matched To GaP: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Geisz, J. F.; Friedman, D. J.; Kurtz, S.

2002-05-01T23:59:59.000Z

397

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

398

Characterization of the environmental fate of Bacillus thuringiensis var. kaurstaki (Btk) after pest eradication efforts in Seattle, WA and Fairfax county, VA  

SciTech Connect

Understanding the fate of biological agents in the environment will be critical to recovery and restoration efforts after a biological attack. Los Alamos National Laboratory (LANL) is conducting experiments in the Seattle, WA and Fairfax County, VA areas to study agent fate in urban environments. As part of their gypsy moth suppression efforts, Washington State and Fairfax County have sprayed Bacillus thuringiensis var. kurstaki (Btk), a common organic pesticide for decades. Many of the spray zones have been in or near urban areas. LANL has collected surface and bulk samples from historical Seattle spray zones to characterize how long Btk persists at detectable levels in the environment, and how long it remains viable in different environmental matrices. This work will attempt to address three questions. First, how long does the agent remain viable at detectable levels? Second, what is the approximate magnitude and duration of resuspension? And third, does the agent transport into buildings? Data designed to address the first question will be presented. Preliminary results indicate Btk remains viable in the environment for at least two years.

Ticknor, Lawrence [Los Alamos National Laboratory; Van Cuyk, Sheila M [Los Alamos National Laboratory; Deshpande, Alina [Los Alamos National Laboratory; Omberg, Kristin M [Los Alamos National Laboratory

2008-01-01T23:59:59.000Z

399

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from {approx}1 x 10{sup 7} to {approx}5 x 10{sup 8} cm{sup -2} across the substrate. Typical diameters are {approx}110 nm for GaP NWs and {approx}220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is {approx}0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Li, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Tu, C. W. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2012-01-30T23:59:59.000Z

400

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amlie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganire, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benot

402

Growth orientation dependent photoluminescence of GaAsN alloys  

SciTech Connect

We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Sato, Shinichiro [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

2012-01-16T23:59:59.000Z

403

InGaAs and Ge MOSFETs with high ? dielectrics  

Science Conference Proceedings (OSTI)

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy

W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong

2011-04-01T23:59:59.000Z

404

Radiation Hard AlGaN Detectors and Imager  

Science Conference Proceedings (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

405

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

406

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

407

Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence  

Science Conference Proceedings (OSTI)

A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.

Chin, A.K.; Keramidas, V.G.; Johnston, W.D. Jr.; Mahajan, S.; Roccasecca, D.D.

1980-02-01T23:59:59.000Z

408

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization  

DOE Green Energy (OSTI)

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. The GaInSb layers were grown by organometallic vapor phase epitaxy (OMVPE) and the InGaAsSb lattice-matched layers were grown by liquid phase epitaxy (LPE). Device fabrication steps include unannealed p-type ohmic contacts, annealed Sn/Au n-type ohmic contacts, and a thick Ag top-surface contact using a lift-off process. Devices are characterized primarily by dark I-V, photo I-V, and quantum efficiency measurements, which are correlated to microscopic and macroscopic material properties. Particular emphasis has been on material enhancements to increase quantum efficiency and decrease dark saturation current density. TPV device performance is presently limited by the base diffusion length, typically 1 to 2 microns.

Hitchcock, C.; Gutmann, R.; Borrego, J.; Ehsani, H.; Bhat, I. [Rensselaer Polytechnic Inst., Troy, NY (United States); Freeman, M.; Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

409

Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells  

Science Conference Proceedings (OSTI)

The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

Baidus, N. V. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Vainberg, V. V. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine); Zvonkov, B. N. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Pylypchuk, A. S., E-mail: pylypchuk@iop.kiev.ua; Poroshin, V. N.; Sarbey, O. G. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)

2012-05-15T23:59:59.000Z

410

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

411

II4, Compositionally-Graded Layers Composed of Tandem InGaAs ...  

Science Conference Proceedings (OSTI)

The specification of the 6 miscut is important because it provides step ..... of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions.

412

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm, Mingwei Zhu  

E-Print Network (OSTI)

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photo- luminescence, m's overall power efficiency. Linearly polarized light can be efficiently generated in GaInN/GaN-based light-emitting

Wetzel, Christian M.

413

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys ...  

Science Conference Proceedings (OSTI)

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys Based on the ... Resources for the Selection and Use of Interatomic Potentials in Atomistic...

414

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

contractors supported the dismantlement including asbestos removal and concrete cutting, electrical, and HVAC. Project support functions were provided by GA organizations...

415

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 {mu}m  

Science Conference Proceedings (OSTI)

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 {mu}m when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 Degree-Sign C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.

Ye Hong; Song Yuxin; Wang Shumin [Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296 (Sweden); Gu Yi [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-12-15T23:59:59.000Z

416

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots  

Science Conference Proceedings (OSTI)

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2012-04-15T23:59:59.000Z

417

Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb  

DOE Green Energy (OSTI)

GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality.

Dutta, P.S.; Ostrogorsky, A.G.; Gutmann, R.J.

1997-05-01T23:59:59.000Z

418

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor  

Science Conference Proceedings (OSTI)

Keywords: Ga vacancies, GaN growth, gas feeding method, optical property, rapid thermal chemical vapor deposition (RTCVD), yellow luminescence

Sun Jung Kim; Young Hun Seo; Kee Suk Nahm; Yun Bong Hahn; Hyun Wook Shim; Eun-Kyung Suh; Kee Young Lim; Hyung Jae Lee

1999-08-01T23:59:59.000Z

419

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-01-01T23:59:59.000Z

420

Functional Imprinting Structures on GaN-Based Light-Emitting ...  

Science Conference Proceedings (OSTI)

Keywords: GaN, light-emitting diode (LED), imprinting technology, far-field pattern modulation, light extraction. 1. Introduction. GaN-based light-emitting diodes...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Bonding and gap states at GaAs-oxide interfaces  

Science Conference Proceedings (OSTI)

The nature of bonding and possible causes of Fermi level pinning at high mobility-high dielectric constant oxide GaAs:HfO"2 interfaces are discussed. It is argued that these are atoms with defective bonding, rather than states due to the bulk semiconductor ... Keywords: GaAs, bonding, interface

John Robertson; Liang Lin

2011-04-01T23:59:59.000Z

422

Elastic properties of Pu metal and Pu-Ga alloys  

Science Conference Proceedings (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

423

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells  

E-Print Network (OSTI)

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells J. Schörmann,a S and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted wells clear reflection high energy electron diffraction oscillations were observed indicating a two

As, Donat Josef

424

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

425

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN  

E-Print Network (OSTI)

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN Christian in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Detchprohm, Theeradetch

426

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network (OSTI)

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

427

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

be applicable to light sources in fiber-optic communication systems.13 However, there have been no reports intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

428

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells  

Science Conference Proceedings (OSTI)

We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 {mu}m) wavelength range.

Nair, Hari P.; Crook, Adam M.; Bank, Seth R. [Microelectronics Research Center, Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Rd, Austin, Texas 78712 (United States); Yu, Kin M. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2012-01-09T23:59:59.000Z

429

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy  

Science Conference Proceedings (OSTI)

We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.

Smakman, E. P.; Garleff, J. K.; Rambabu, P.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ (Netherlands); Young, R. J.; Hayne, M. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2012-04-02T23:59:59.000Z

430

11,23,1,3,2,19,30,"BANGOR HYDRO ELECTRIC CO","MEDWAY",0,"LIGHT...  

U.S. Energy Information Administration (EIA) Indexed Site

9,2520,35860,99999999,7799,4,11479,"NG","GT" 35,55,1,7,"D",72,25,"MADISON GAS & ELEC CO","WIND ENERGY",0,"NA",0,0,"M",1100,"A",,2000,0,0,99999999,0,0,99999999,0,0,99999999,0,0,999...

431

11,23,1,3,2,19,30,"BANGOR HYDRO ELECTRIC CO","MEDWAY",0,"LIGHT...  

U.S. Energy Information Administration (EIA) Indexed Site

00,20425,262090,1e+15,7799,4,11479,"NG","GT" 35,55,1,7,"D",72,25,"MADISON GAS & ELEC CO","WIND ENERGY",0,"NA",0,0,"M",1100,"A",,2000,2213,0,1e+15,7886,4,11479,"GEO","WI"...

432

11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,0...  

U.S. Energy Information Administration (EIA) Indexed Site

4,0,10,125,0,0,0,0,18,215,0,1299,8,51596,"NG","IC" 47,20,5,4,9,659,10,"LARNED (CITY OF)","GAS TURBINE",0,"NAT GAS",0,1290,,,91,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0...

433

11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,0...  

U.S. Energy Information Administration (EIA) Indexed Site

4439,0,0,0,0,54,663,0,0,0,0,1299,8,51596,"NG","IC" 47,20,5,4,9,659,10,"LARNED (CITY OF)","GAS TURBINE",0,"NAT GAS",0,1291,,,92,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0...

434

11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159...  

U.S. Energy Information Administration (EIA) Indexed Site

9,0,0,99999999,0,0,99999999,1299,8,10713,"NG","IC" 47,20,5,4,9,659,10,"LARNED (CITY OF)","GAS TURBINE",0,"NAT GAS",51596,0,"A",98,,,1999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,...

435

11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159...  

U.S. Energy Information Administration (EIA) Indexed Site

,0,"A",1296,,,97,283,3485,0,1299,8,10713,"NG","IC" 47,20,5,4,9,659,10,"LARNED (CITY OF)","GAS TURBINE",0,"NAT GAS",51596,0,"A",1296,,,97,0,0,0,1298,8,10713,"NG","GT"...

436

11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159...  

U.S. Energy Information Administration (EIA) Indexed Site

,"A",1295,,,96,1591,18585,0,1299,8,10713,"NG","IC" 47,20,5,4,9,659,10,"LARNED (CITY OF)","GAS TURBINE",0,"NAT GAS",51596,0,"A",1295,,,96,0,0,0,1298,8,10713,"NG","GT"...

437

11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159...  

U.S. Energy Information Administration (EIA) Indexed Site

,"A",1297,,,1998,133,1680,0,1299,8,10713,"NG","IC" 47,20,5,4,9,659,10,"LARNED (CITY OF)","GAS TURBINE",0,"NAT GAS",51596,0,"A",1297,,,1998,0,0,0,1298,8,10713,"NG","GT"...

438

11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159...  

U.S. Energy Information Administration (EIA) Indexed Site

0,0,0,0,0,0,0,0,0,0,0,0,0,0,1299,8,10713,"NG","IC" 47,20,5,4,9,659,10,"LARNED (CITY OF)","GAS TURBINE",0,"NAT GAS",51596,0,"A",1297,,,98,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0...

439

11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159...  

U.S. Energy Information Administration (EIA) Indexed Site

,0,0,0,0,0,0,0,1591,18585,0,1299,8,10713,"NG","IC" 47,20,5,4,9,659,10,"LARNED (CITY OF)","GAS TURBINE",0,"NAT GAS",51596,0,"A",1295,,,96,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0...

440

11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,1179...  

U.S. Energy Information Administration (EIA) Indexed Site

54,3176,0,0,0,0,0,0,0,0,0,0,1299,8,51596,"NG","IC" 47,20,5,4,9,659,10,"LARNED (CITY OF)","GAS TURBINE",0,"NAT GAS",10713,"0A",1294,,,95,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,...

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,0...  

U.S. Energy Information Administration (EIA) Indexed Site

7,0,0,0,0,0,0,0,0,0,0,0,0,0,1299,8,51596,"NG","IC" 47,20,5,4,9,659,10,"LARNED (CITY OF)","GAS TURBINE",0,"NAT GAS",0,1292,,,93,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0...

442

11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159...  

U.S. Energy Information Administration (EIA) Indexed Site

,0,0,0,0,0,0,0,0,283,3485,0,1299,8,10713,"NG","IC" 47,20,5,4,9,659,10,"LARNED (CITY OF)","GAS TURBINE",0,"NAT GAS",51596,0,"A",1296,,,97,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0...

443

11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159...  

U.S. Energy Information Administration (EIA) Indexed Site

A",98,,,1999,733,9964,1e+15,1299,8,10713,"NG","IC" 47,20,5,4,9,659,10,"LARNED (CITY OF)","GAS TURBINE",0,"NAT GAS",51596,0,"A",98,,,1999,0,0,1e+15,1298,8,10713,"NG","GT"...

444

Bangor at TREC 2003: Q&A and Genomics Tracks Knowing ...  

Science Conference Proceedings (OSTI)

... which adopts an agent-based approach to ... The model providing the best compression ... for Text Categorization Language Modelling for Information ...

2004-02-13T23:59:59.000Z

445

DOE/EIS-0372; Final Environmental Impact Statement for the Bangor...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Enforcement Officer, Town of Holden Mr. Jerry Davis, Code Enforcement Officer, Town of Lincoln Mr. Richard Decarteret, First SelectmanAssessor, Town of Beddington Ms. Melissa...

446

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

DOE Green Energy (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

447

Dielectrics for GaN based MIS-diodes  

SciTech Connect

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Ren, F.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1998-02-01T23:59:59.000Z

448

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells  

E-Print Network (OSTI)

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells H. C. Chui, S. M. Lord report the first observation of intersubband transitions in In,Ga, -#s(y=O.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain

Fejer, Martin M.

449

Atomic hydrogen cleaning of polarized GaAs photocathodes  

DOE Green Energy (OSTI)

Atomic hydrogen cleaning followed by heat cleaning at 450 C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600 C heat cleaning. The low-temperature cleaning technique was successfully applied to thin, strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 seconds was extended by a factor of 100.

Maruyama, Takashi

2003-04-03T23:59:59.000Z

450

Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-08-01T23:59:59.000Z

451

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra to predict the correct result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-02-01T23:59:59.000Z

452

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer  

Science Conference Proceedings (OSTI)

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-{mu}m-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.

Shen, X. Q.; Takahashi, T.; Kawashima, H.; Ide, T.; Shimizu, M. [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)

2012-07-16T23:59:59.000Z

453

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network (OSTI)

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

454

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

455

Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep...

456

Lattice vibrations of pure and doped GaSe  

Science Conference Proceedings (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

457

Preparation of GaAs photocathodes at low temperature  

SciTech Connect

The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated.

Mulhollan, G.; Clendenin, J.; Tang, H.

1996-10-01T23:59:59.000Z

458

HH5, Antiferromagnetic Interlayer Exchange Couplings in Ga  

Science Conference Proceedings (OSTI)

Author(s), Sun Jae Chung, Sanghoon Lee, Brian J. Kirby, Julie A. Borchers, ... LATE NEWS: KK3, Non-Catalytic Synthesis of GaN Nanostructures at Low...

459

Micro Raman Spectroscopy of Annealed Erbium Implanted GaN  

E-Print Network (OSTI)

Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 510? cm?. The implanted samples were annealed in nitrogen atmosphere ...

Vajpeyi, Agam P.

460

GaAs Films Prepared by RF-Magnetron Sputtering  

DOE Green Energy (OSTI)

The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

2001-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Equatorial Guinea (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Equatorial Guinea (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

462

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Nigeria (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Nigeria (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

463

Cathodoluminescence Microanalysis of Suspended GaN Nano ...  

Science Conference Proceedings (OSTI)

CL from bulk GaN is dominated by the ~3.4 eV near-band-edge emission. In contrast, the suspended nano-membranes emit a broad defect associated emission...

464

BB2, Novel Cs-Free GaN Photocathodes  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

465

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Trinidad and Tobago (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul...

466

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

467

Elba Island, GA Liquefied Natural Gas Total Imports (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Total Imports (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5...

468

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN  

Science Conference Proceedings (OSTI)

We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320 K range. We first show that the effective lifetime of QW excitons {tau} increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing {tau} depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs.

Corfdir, P.; Dussaigne, A.; Giraud, E.; Ganiere, J.-D.; Grandjean, N.; Deveaud-Pledran, B. [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Teisseyre, H. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Suski, T.; Grzegory, I. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Lefebvre, P. [Laboratoire Charles Coulomb - UMR5221 - CNRS - Universite Montpellier 2, 34095 Montpellier (France)

2012-02-01T23:59:59.000Z

469

Modeling of InGaSb thermophotovoltaic cells and materials  

DOE Green Energy (OSTI)

A closed form computer program has been developed for the simulation and optimization of In{sub x}Ga{sub 1{minus}x}Sb thermophotovoltaic cells operating at room temperature. The program includes material parameter models of the energy bandgap, optical absorption constant, electron and hole mobility, intrinsic carrier concentration and index of refraction for any composition of GaInSb alloys.

Zierak, M.; Borrego, J.M.; Bhat, I.; Gutmann, R.J. [Rensselaer Polytechnic Inst., Troy, NY (United States); Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

470

SEU design consideration for MESFETs on LT GaAs  

SciTech Connect

Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.

Weatherford, T.R.; Radice, R.; Eskins, D. [Naval Postgraduate School, Monterey, CA (United States)] [and others

1997-12-01T23:59:59.000Z

471

Influence of defect formation as a result of incorporation of a Mn {delta} layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells  

Science Conference Proceedings (OSTI)

The influence of defect formation upon the deposition of a Mn {delta} layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied.

Gorshkov, A. P., E-mail: gorskovap@phys.unn.ru; Karpovich, I. A.; Pavlova, E. D.; Kalenteva, I. L. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

2012-02-15T23:59:59.000Z

472

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures  

E-Print Network (OSTI)

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures, U.S.A. ABSTRACT Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs the device lifetime in a non-destructive mode. INTRODUCTION Group ­ III nitride light emitting diodes (LEDs

Wetzel, Christian M.

473

Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells  

Science Conference Proceedings (OSTI)

Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.

Toropov, A. A., E-mail: toropov@beam.ioffe.ru; Kaibyshev, V. Kh.; Terent'ev, Ya. V.; Ivanov, S. V.; Kop'ev, P. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-02-15T23:59:59.000Z

474

Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs  

SciTech Connect

We form self-assembled GaSb type-II nanorods on a vicinal (111)B GaAs substrate by molecular beam epitaxy and study their optical anisotropy. The GaSb nanorods are elongated and aligned along the [-1 0 1] direction, where the average length, width, and height are about 84, 30, and 2.5 nm. In polarized photoluminescence (PL) measurements, the peak of the GaSb nanorods is observed at about 1.1 eV, where the PL intensity is largest for the [-1 0 1] polarization and smallest for the polarization perpendicular to it. The degree of polarization is more than 20% and depends on the recombination energy. By comparing with a theoretical model based on 4 x 4 Luttinger-Kohn Hamiltonian, we find that the experimental results are explained by considering the Sb/As inter-diffusion and the nanorod height distribution.

Kawazu, Takuya; Noda, Takeshi; Mano, Takaaki; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Akiyama, Yoshihiro [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan); Sakaki, Hiroyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan)

2011-12-05T23:59:59.000Z

475

EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

476

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires  

SciTech Connect

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.

Dobrovolsky, A.; Stehr, J. E.; Chen, S. L.; Chen, W. M.; Buyanova, I. A. [Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden); Kuang, Y. J. [Department of Physics, University of California, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Materials Science and Engineering, La Jolla, California 92093 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093 (United States)

2012-10-15T23:59:59.000Z

477

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

478

JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

479

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network (OSTI)

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

480

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors  

Science Conference Proceedings (OSTI)

Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure

Hung, S.T. [Feng Chia University, Taichung, Taiwan; Chung, Chi-Jung [Feng Chia University, Taichung, Taiwan; Chen, Chin Ching [University of Florida, Gainesville; Lo, C. F. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga bangor wa" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer  

Science Conference Proceedings (OSTI)

The use of low temperature grown GaAs (LT GaAs) buffer layer in GaAs FETs is shown via computer simulation and experimental measurement to reduce ion-induced charge collection by two to three orders of magnitude. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the FETs. Error rate calculations indicate that the soft error rate of LT GaAs integrated circuits will be reduced by several orders of magnitude when compared to conventional FET-based GaAs ICs.

McMorrow, D.; Weatherford, T.R.; Curtice, W.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Tran, L.H.; Campbell, A.B. [Naval Research Lab., Washington, DC (United States)

1995-12-01T23:59:59.000Z

482

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

483

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

484

CC2, Two-Dimensional Electron Gas in In X Al 1-X N/Aln/GaN ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

485

Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy  

SciTech Connect

We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 Rue des Martyrs, 38054 Grenoble cedex 9 (France); Doisneau, B. [SIMaP, Grenoble INP, Domaine Universitaire, BP 75, 38402 Saint Martin d'Heres (France); Sarigiannidou, E. [LMGP, Grenoble INP, 3 Parvis Louis Neel, BP 257, 38016 Grenoble cedex 1 (France)

2011-08-01T23:59:59.000Z

486

Phonon Knudsen flow in GaAs/AlAs superlattices  

DOE Green Energy (OSTI)

The measured in-plane thermal conductivity, {delta}{sub SL} of GaAs/AlAs superlattices with even moderate layer thicknesses are significantly smaller than the weighted average, {delta}{sub l} = 67 W/Km, of the bulk GaAs and AlAs conductivities. One expects a suppression of the thermal conductivity to that of an actual Al{sub 0.5}Ga{sub 0.5}As alloy when the thickness of the GaAs and AlAs layers approaches that of a single monolayer. However, the observed superlattice thermal conductivity remains suppressed even at layer thickness {approx_gt} 10 nm. The low thermal conductivities, and very high mobilities, make n-doped GaAs/AlAs superlattices attractive possibilities for thermoelectric devices. With Molecular-Beam-Epitaxial grown GaAs/AlAs superlattices one can expect the individual GaAs and AlAs layers to be extremely clean. Defect and/or alloy scattering is limited to be near the heterostructure interfaces. The authors estimate the room-temperature phonon mean-free-path to be 42 (22) nm for the longitudinal (transverse) mode and thus comparable to or smaller than the layer thicknesses. Thus they expect an important phonon scattering at the interfaces. They study this phonon scattering at the superlattice interfaces assuming a Knudsen flow characterized by diffusive scattering. The solid curve in the figure shows the Knudsen-flow theory estimated for the superlattice thermal conductivity which shows a significant reduction when the layer thickness is shorter than the estimated phonon mean free paths.

Hyldgaard, P.; Mahan, G.D. [Oak Ridge National Lab., TN (United States). Solid State Div.]|[Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

1995-09-01T23:59:59.000Z

487

High Voltage GaN Schottky Rectifiers  

SciTech Connect

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25T23:59:59.000Z

488

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

489

Nanostructuring of silicon substrates for the site-controlled growth of GaAs/In0.15Ga0.85As/GaAs nanostructures  

Science Conference Proceedings (OSTI)

We report the optimization of electron beam lithography and inductively coupled plasma (ICP) dry etching processes to fabricate pre-patterned Si (100) substrates with sub-100nm holes with controlled size and shape. An efficient in situ cleaning sequence ... Keywords: Electron beam lithography, ICP dry etching, InGaAs quantum dots, MBE growth, Nanostructuring of silicon

Muhammad Usman; Tariq Alzoubi; Mohamed Benyoucef; Johann Peter Reithmaier

2012-09-01T23:59:59.000Z

490

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

491

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network (OSTI)

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

492

High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report the highest mobility values above 2000 cm{sup 2}/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Inagaki, Makoto [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan); Yamaguchi, Masafumi [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan)

2012-11-26T23:59:59.000Z

493

Black-body radiation shift of the Ga$^{+}$ clock transition  

E-Print Network (OSTI)

The blackbody radiation shift of the Ga$^+$ $4s^2 \\ ^1S^e_0 \\to 4s4p \\ ^3P^o_0$ clock transition is computed to be $-$$0.0140 \\pm 0.0048$ Hz at 300 K. The small shift is consistent with the blackbody shifts of the clock transitions of other group III ions which are of a similar size. The polarizabilities of the Ga$^+$ $4s^2 \\ ^1S^e_0$, $4s4p \\ ^3P^o_0$, and $4s4p \\ ^1P^o_1$ states were computed using the configuration interaction method with an underlying semi-empirical core potential. A byproduct of the analysis involved large scale calculations of the low lying spectrum and oscillator strengths of the Ga$^{2+}$ ion.

Cheng, Yongjun

2013-01-01T23:59:59.000Z

494

Aug. 8-9, 2006 HAPL meeting, GA Open Discussion on Advanced Armor  

E-Print Network (OSTI)

Aug. 8-9, 2006 HAPL meeting, GA 1 Open Discussion on Advanced Armor Concepts Moderated by A. René in case the W armor does not work. #12;Aug. 8-9, 2006 HAPL meeting, GA 3 Roman Aquaduct at Pont du Gard, Provence #12;Aug. 8-9, 2006 HAPL meeting, GA 4 Possible Advanced Armor Options Include: · Engineered

Raffray, A. René

495

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua  

E-Print Network (OSTI)

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua Department of Electrical-threshold current injection efficiency of quantum well QW lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW

Gilchrist, James F.

496

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs  

E-Print Network (OSTI)

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

Piner, Edwin L.

497

ANN-based GA for generating the sizing curve of stand-alone photovoltaic systems  

Science Conference Proceedings (OSTI)

Recent advances in artificial intelligence techniques have allowed the application of such technologies in real engineering problems. In this paper, an artificial neural network-based genetic algorithm (ANN-GA) model was developed for generating the ... Keywords: ANN, ANN-GA, GA, Prediction, Sizing curve, Stand-alone PV system

Adel Mellit

2010-05-01T23:59:59.000Z

498

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network (OSTI)

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

499

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network (OSTI)

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

500

Vertically aligned GaN nanotubes - Fabrication and current image analysis  

Science Conference Proceedings (OSTI)

In this work, we present a one step formation method of nanotubes on GaN film, and then map out local current of nanotubes. GaN nanotubes were formed by inductively coupled plasma (ICP) etching and found that tops of these nanotubes were hexagonal with ... Keywords: C-AFM, FESEM, GaN, ICP, Nanotubes

Shang-Chao Hung; Yan-Kuin Su; Shoou-Jinn Chang; Y. H. Chen

2006-11-01T23:59:59.000Z