National Library of Energy BETA

Sample records for ga atlanta ia

  1. Secretary Moniz's Keynote at the Sam Nunn Policy Forum in Atlanta, GA --

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    As Delivered | Department of Energy Keynote at the Sam Nunn Policy Forum in Atlanta, GA -- As Delivered Secretary Moniz's Keynote at the Sam Nunn Policy Forum in Atlanta, GA -- As Delivered April 16, 2014 - 11:35am Addthis Dr. Ernest Moniz Dr. Ernest Moniz Secretary of Energy Well, thank you. Professor Bankoff, Provost Bras, I'll also acknowledge the Bank of America support of this symposium and also my monthly support of the Bank of America which is quite considerable with those credit

  2. Atlanta Central UESC Pilot Project

    Office of Environmental Management (EM)

    Atlanta Central UESC Pilot Project Elbert P. Tuttle United States Court of Appeals - Atlanta, GA Lewis R. Morgan Federal Building and Courthouse - Newnan, GA Rome Federal Building ...

  3. USD E'16 ATLANTA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    REGISTER NOW 15th Annual DOE Small Business Forum & Expo MAY 23 - 25, 2016 Atlanta Marriott Marquis 265 Peachtree Center Avenue Atlanta, GA 30303 Government per diem 135.00night ...

  4. Remarks by Federal Blue Ribbon Commission J. David Jameson Atlanta, GA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Federal Blue Ribbon Commission J. David Jameson Atlanta, GA October 18, 2011 Good Morning. I am David Jameson. I am President and CEO of the Greater Aiken, South Carolina, Chamber of Commerce. I am here today in my capacity as current Chairman of the SRS Community Reuse Organization. The SRSCRO is a non-profit regional group supporting economic diversification and job creation in a five-county in Georgia and South Carolina near the Department of Energy's Savannah River Site. We are unique among

  5. Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit on July 9 in Atlanta, GA

    Broader source: Energy.gov [DOE]

    On July 9, the U.S. Department of Energy will be holding the Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit at the Renaissance Atlanta Midtown Hotel in Atlanta, Georgia.

  6. Workplace Charging Challenge Partner: City of Atlanta | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Atlanta Workplace Charging Challenge Partner: City of Atlanta Workplace Charging Challenge Partner: City of Atlanta Joined the Challenge: March 2014 Headquarters: Atlanta, GA Charging Location: Atlanta, GA Domestic Employees: 8,107 The City of Atlanta's provision of workplace charging builds upon a larger strategy to improve transportation in the region and provide sustainable transportation options. The first component focuses on increasing the adoption of alternative transportation

  7. Advancing Residential Retrofits in Atlanta

    SciTech Connect (OSTI)

    Jackson, Roderick K; Kim, Eyu-Jin; Roberts, Sydney; Stephenson, Robert

    2012-07-01

    This report will summarize the home energy improvements performed in the Atlanta, GA area. In total, nine homes were retrofitted with eight of the homes having predicted source energy savings of approximately 30% or greater based on simulated energy consumption.

  8. Atlanta TEC Meeting -- Tribal Group Summary 3-6-07

    Office of Environmental Management (EM)

    Atlanta, GA - January 31, 2007 Session Chaired by: Jay Jones (DOE, Office of Civilian Radioactive Waste Management, OCRWM) Regular Members in Attendance: Kenny Anderson (Las Vegas ...

  9. Agenda CBS Public Meeting-Atlanta

    Energy Savers [EERE]

    PUBLIC MEETING Georgia Tech Hotel and Conference Center 800 Spring Street N.W. Atlanta, GA 30308 April 11, 2016 12:00-1:00 PM Informal Open House and Poster Session (Before ...

  10. EECBG Success Story: Atlanta Suburb Greases the Path to Savings...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Ken Cook Atlanta Suburb Greases the Path to Savings with Biodiesel The new energy efficient IT Data Center in Savannah, Georgia. | Courtesy of the City of Savannah, GA. EECBG ...

  11. WNRC diverting to Atlanta FRC | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    NOTICE - NARA Diversion Prgm re WNRC Transfers Routed to FRC-Atlanta, GA.pdf More Documents & Publications Denver FRC diverting to Kingsridge FRC (Dayton, OH) POINT OF CONTACT...

  12. 2009 National Electric Transmission Congestion Study- Atlanta Workshop

    Broader source: Energy.gov [DOE]

    On July 29, 2008, DOE hosted a regional pre-study workshop in Atlanta, GA to receive input and suggestions concerning the 2009 National Electric Transmission Congestion Study. The agenda and full...

  13. Atlanta Chemical Engineering LLC | Open Energy Information

    Open Energy Info (EERE)

    Atlanta Chemical Engineering LLC Jump to: navigation, search Logo: Atlanta Chemical Engineering LLC Name: Atlanta Chemical Engineering LLC Place: Marietta, Georgia Country: United...

  14. Making Connections for Atlanta Students

    Broader source: Energy.gov [DOE]

    The Atlanta Students in Energy and Climate Forum, held in April 2013, brought together entrepreneurs, and professors to share experiences and motivations in their pursuit of environmental stewardship.

  15. Atlanta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Solarity Sustainable World Capital TCE Energy Corporation Waspa Wheego Electric Cars Energy Incentives for Atlanta, Georgia City of Atlanta - Sustainable Home Initiative in...

  16. Meeting Materials: Consent-Based Siting Public Meeting in Atlanta...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta (April 11, 2016) Meeting Materials: Consent-Based Siting Public Meeting in Atlanta (April 11, 2016) Meeting Materials: Consent-Based Siting Public Meeting in Atlanta (April ...

  17. fe0013961-GaTech | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  18. Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Atlanta Airport Converts Shuttles to CNG to someone by E-mail Share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Facebook Tweet about Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Twitter Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Google Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Delicious Rank Alternative Fuels Data Center: Atlanta Airport Converts

  19. Clark Atlanta Universities (CAU) Energy Related Research Capabilities...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Clark Atlanta Universities (CAU) Energy Related Research Capabilities Clark Atlanta Universities (CAU) Energy Related Research Capabilities How energy related research has helped ...

  20. Atlanta TEC Meeting -- Tribal Group Summary 3-6-07

    Office of Environmental Management (EM)

    Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference April 15, 2013 - 1:31pm Addthis Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. What does this project do? Goal 1. Protect human health and the environment The Atlanta Community Leaders Institute (CLI) held a conference on

  1. Clark Atlanta Universities (CAU) Energy Related Research Capabilities |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Clark Atlanta Universities (CAU) Energy Related Research Capabilities Clark Atlanta Universities (CAU) Energy Related Research Capabilities How energy related research has helped Clark Atlanta University. PDF icon Clark Atlanta Universities (CAU) Energy Related Research Capabilities More Documents & Publications 2008-2009 Winter Fuels Outlook Conference Ronald Reagan Building and International Trade Center HYDROGEN AND FUEL CELL EDUCATION AT CALIFORNIA STATE

  2. Agenda CBS Public Meeting-Atlanta

    Energy Savers [EERE]

    Atlanta, Georgia April 11, 2016 Dr. Michael Elliott is an associate professor, jointly appointed to the Schools of City and Regional Planning and Public Policy, at the Georgia Institute of Technology. He is a co-founder and has served as co-director of both the Consortium on Negotiation and Conflict Resolution and the Southeast Negotiation Network. Associate Professor Michael Elliott (1) Mediating and facilitating public policy consensus building processes; (2) Designing dispute management

  3. Building America Technology Solutions for New and Existing Homes: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet),

    Office of Energy Efficiency and Renewable Energy (EERE)

    This case study describes the construction of a new test home in Atlanta, GA, that demonstrates current best practices for the mixed-humid climate, including a building envelope featuring advanced air sealing details and low density spray foam insulation, glazing that exceeds ENERGY STAR requirements, and a high performance heating and cooling system.

  4. IA Experts Listing 2014 | Department of Energy

    Energy Savers [EERE]

    IA Experts Listing 2014 IA Experts Listing 2014 PDF icon IA Experts Listing January 2014 More Documents & Publications Office of International Affairs Organization Chart PI...

  5. Rolling Hills (IA) | Open Energy Information

    Open Energy Info (EERE)

    Rolling Hills (IA) Jump to: navigation, search Name Rolling Hills (IA) Facility Rolling Hills (IA) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service...

  6. Steamboat IA Geothermal Facility | Open Energy Information

    Open Energy Info (EERE)

    IA Geothermal Facility Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Steamboat IA Geothermal Facility General Information Name Steamboat IA Geothermal Facility...

  7. Atlanta Suburb Greases the Path to Savings with Biodiesel

    Broader source: Energy.gov [DOE]

    A community of 51,000 located just northwest of Atlanta, Smyrna will soon begin producing biodiesel made primarily from used cooking oil in order to cut fuel costs and reduce fossil fuel consumption.

  8. Meeting Materials: Consent-Based Siting Public Meeting in Atlanta (April

    Energy Savers [EERE]

    11, 2016) | Department of Energy Atlanta (April 11, 2016) Meeting Materials: Consent-Based Siting Public Meeting in Atlanta (April 11, 2016) Meeting Materials: Consent-Based Siting Public Meeting in Atlanta (April 11, 2016) The Department will host a public meeting on consent-based siting on April 11th in Atlanta at the Georgia Institute of Technology Conference Center. The purpose of the consent-based siting public meeting is to hear from the public and interested stakeholders on what

  9. Better Buildings Challenge, Atlanta Nears Halfway Mark in Meeting Citywide Goal of 20% Energy Savings

    Broader source: Energy.gov [DOE]

    The Energy Department yesterday recognized Atlanta for its progress and leadership in meeting a citywide goal to improve the energy performance of its buildings by 20% by 2020.

  10. Statement by Energy Secretary Steven Chu on Opening of Atlanta Job Training

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Center | Department of Energy Opening of Atlanta Job Training Center Statement by Energy Secretary Steven Chu on Opening of Atlanta Job Training Center October 26, 2010 - 12:00am Addthis WASHINGTON, D.C. - U.S. Energy Secretary Steven Chu issued the following statement on today's grand opening of the Southeast Weatherization & Energy Efficiency Training (SWEET) Center in Atlanta, Georgia. "The SWEET Center in Atlanta will play a critical role in training thousands of workers for new

  11. Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia

    Broader source: Energy.gov [DOE]

    Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia.

  12. Defining photometric peculiar type Ia supernovae

    SciTech Connect (OSTI)

    Gonzlez-Gaitn, S.; Pignata, G.; Frster, F.; Gutirrez, C. P.; Bufano, F.; Galbany, L.; Hamuy, M.; De Jaeger, T. [Millennium Institute of Astrophysics, Casilla 36-D, Santiago (Chile); Hsiao, E. Y.; Phillips, M. M. [Carnegie Observatories, Las Campanas Observatory, Casilla 601, La Serena (Chile); Folatelli, G. [Kavli Institute for the Physics and Mathematics of the Universe, the University of Tokyo, Kashiwa 277-8583 (Kavli IPMU, WPI) (Japan); Anderson, J. P., E-mail: sgonzale@das.uchile.cl [European Southern Observatory, Alonso de Crdova 3107, Casilla 19, Santiago (Chile)

    2014-11-10

    We present a new photometric identification technique for SN 1991bg-like type Ia supernovae (SNe Ia), i.e., objects with light curve characteristics such as later primary maxima and the absence of a secondary peak in redder filters. This method is capable of selecting this sub-group from the normal type Ia population. Furthermore, we find that recently identified peculiar sub-types such as SNe Iax and super-Chandrasekhar SNe Ia have photometric characteristics similar to 91bg-like SNe Ia, namely, the absence of secondary maxima and shoulders at longer wavelengths, and can also be classified with our technique. The similarity of these different SN Ia sub-groups perhaps suggests common physical conditions. This typing methodology permits the photometric identification of peculiar SNe Ia in large upcoming wide-field surveys either to study them further or to obtain a pure sample of normal SNe Ia for cosmological studies.

  13. Category:Mason, IA | Open Energy Information

    Open Energy Info (EERE)

    Mason, IA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Mason, IA" The following 16 files are in this category, out of 16 total....

  14. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    60tifrancis2012o.pdf More Documents & Publications DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb CountyMetropolitan...

  15. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    vt060francis2010p.pdf More Documents & Publications DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb CountyMetropolitan...

  16. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    60tifrancis2011p.pdf More Documents & Publications DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb CountyMetropolitan...

  17. Building America Case Study: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2014-09-01

    As part of the NAHB Research Center Industry Partnership, Southface partnered with TaC Studios, an Atlanta based architecture firm specializing in residential and light commercial design, on the construction of a new test home in Atlanta, GA in the mixed-humid climate. This home serves as a residence and home office for the firm's owners, as well as a demonstration of their design approach to potential and current clients. Southface believes the home demonstrates current best practices for the mixed-humid climate, including a building envelope featuring advanced air sealing details and low density spray foam insulation, glazing that exceeds ENERGY STAR requirements, and a high performance heating and cooling system. Construction quality and execution was a high priority for TaC Studios and was ensured by a third party review process. Post construction testing showed that the project met stated goals for envelope performance, an air infiltration rate of 2.15 ACH50. The homeowner's wished to further validate whole house energy savings through the project's involvement with Building America and this long-term monitoring effort. As a Building America test home, this home was evaluated to detail whole house energy use, end use loads, and the efficiency and operation of the ground source heat pump and associated systems. Given that the home includes many non-typical end use loads including a home office, pool, landscape water feature, and other luxury features not accounted for in Building America modeling tools, these end uses were separately monitored to determine their impact on overall energy consumption.

  18. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology

    Broader source: Energy.gov (indexed) [DOE]

    Vehicle Project | Department of Energy 1 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation PDF icon arravt060_ti_francis_2011_p.pdf More Documents & Publications DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project Clean Cities 2009 Petroleum Displacement Awards

  19. DOE ZERH Case Study: Heirloom Design Build, Euclid Avenue, Atlanta, GA

    SciTech Connect (OSTI)

    none,

    2015-09-01

    Case study of a DOE 2015 Housing Innovation Award winning custom home in the mixed-humid climate that got a HERS 50 without PV, with 2x6 16” on center walls with R-19 ocsf; basement with R-28 ccsf, R-5 rigid foam under slab; sealed attic with R-28 ocsf under roof deck; 22.8 SEER; 12.5 HSPF heat pump.

  20. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    Energy Savers [EERE]

    Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 | Department of Energy Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011 This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S

  1. Sweetspot: Near-infrared observations of 13 type Ia supernovae...

    Office of Scientific and Technical Information (OSTI)

    We present 13 Type Ia supernovae (SNe Ia) observed in the rest-frame near-infrared (NIR) ... Our sample includes two SNe Ia at z 0.09, which represent the most distant rest-frame ...

  2. Constraining Cosmic Evolution of Type Ia Supernovae (Journal...

    Office of Scientific and Technical Information (OSTI)

    Constraining Cosmic Evolution of Type Ia Supernovae Citation Details In-Document Search Title: Constraining Cosmic Evolution of Type Ia Supernovae We present the first large-scale...

  3. Constraining Cosmic Evolution of Type Ia Supernovae (Journal...

    Office of Scientific and Technical Information (OSTI)

    Constraining Cosmic Evolution of Type Ia Supernovae Citation Details In-Document Search Title: Constraining Cosmic Evolution of Type Ia Supernovae You are accessing a document...

  4. ASTRONOMY AND ASTROPHYSICS Dark Energy, Type Ia supernovae, radiative

    Office of Scientific and Technical Information (OSTI)

    of Oklahoma Univ. of Oklahoma 79 ASTRONOMY AND ASTROPHYSICS Dark Energy, Type Ia supernovae, radiative transfer, Dark Energy, Type Ia supernovae, radiative transfer, The...

  5. Type Ia Supernovae Project at NERSC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of star called a white dwarf. The majority of SN Ia explosions occur far away from our galaxy; yet, due to their enormous intrinsic brightness, outshining billions of stars, we can...

  6. IA Blog Archive | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    "always be five years away." For four key clean energy technologies, that clean energy future has already arrived. August 21, 2013 IA Blog Archive ActOnClimate: Secretary...

  7. Southface Energy Institute: Advanced Commercial Buildings Initiative

    Broader source: Energy.gov [DOE]

    Lead Performer: Southface Energy Institute – Atlanta, GA Partners: - City of AtlantaAtlanta, GA - Georgia Institute of Technology – Atlanta, GA - Kendeda Fund – Atlanta, GA - Oak Ridge National Laboratory – Oak Ridge, TN - Acuity Brands Lighting – Atlanta, GA - Vermont Energy Investment Corp – Burlington, VT - Georgia Power– Atlanta, GA - Southeast Energy Efficiency Alliance – Atlanta, GA - JPB Foundation – New York, NY - Central Atlanta Progress – Atlanta, GA

  8. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect (OSTI)

    Not Available

    2011-05-01

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  9. DOE - Office of Legacy Management -- Titus Metals - IA 04

    Office of Legacy Management (LM)

    Designated Name: Not Designated Alternate Name: None Location: Waterloo , Iowa IA.04-1 Evaluation Year: 1987 IA.04-2 Site Operations: Extruded uranium billets to produce fuel ...

  10. IA Blog Archive | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Blog Archive IA Blog Archive RSS March 10, 2016 President Obama and Canadian Prime Minister Justin Trudeau at the White House in Washington. | Photo courtesy of the Government of Canada. How the U.S. and Canada are Fighting Climate Change Together Learn how the U.S. and Canada are partnering to build a stronger clean energy future. February 10, 2016 DOE Joins Pakistan's Energy Ministries to Launch $3 Million Program to support Pakistan's Energy Development Department of Energy Assistant

  11. Southface Energy Institute: Advanced Commercial Buildings Initiative...

    Broader source: Energy.gov (indexed) [DOE]

    Southface Energy Institute: Advanced Commercial Buildings Initiative Lead Performer: Southface Energy Institute - Atlanta, GA Partners: - City of Atlanta - Atlanta, GA - Georgia ...

  12. IA News Archive | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    News Archive IA News Archive RSS April 14, 2016 Statement on First Meeting of the United States-Republic of Korea High Level Bilateral Commission Deputy Secretary of Energy Elizabeth Sherwood-Randall and Republic of Korea Vice Foreign Minister Cho Tae-Yul co-chaired the first meeting of the U.S.-ROK High Level Bilateral Commission in Seoul, South Korea. November 23, 2015 Energy Department Announces Six Clean Energy Projects through Partnership with Israel U.S. Department of Energy and Israel's

  13. HUBBLE RESIDUALS OF NEARBY TYPE Ia SUPERNOVAE ARE CORRELATED...

    Office of Scientific and Technical Information (OSTI)

    Host galaxy measurements will yield improved distances to SNe Ia. less Authors: Kelly, Patrick L. ; Burke, David L. 1 ; Hicken, Malcolm ; Mandel, Kaisey S. ; Kirshner, Robert ...

  14. Turbulence-Flame Interactions in Type Ia Supernovae (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Journal Article: Turbulence-Flame Interactions in Type Ia Supernovae Citation Details In-Document Search Title: Turbulence-Flame Interactions in Type Ia Supernovae The large range of time and length scales involved in type Ia supernovae (SN Ia) requires the use of flame models. As a prelude to exploring various options for flame models, we consider, in this paper, high-resolution three-dimensional simulations of the small-scale dynamics of nuclear flames in the supernova

  15. The Distant Type Ia Supernova Rate

    DOE R&D Accomplishments [OSTI]

    Pain, R.; Fabbro, S.; Sullivan, M.; Ellis, R. S.; Aldering, G.; Astier, P.; Deustua, S. E.; Fruchter, A. S.; Goldhaber, G.; Goobar, A.; Groom, D. E.; Hardin, D.; Hook, I. M.; Howell, D. A.; Irwin, M. J.; Kim, A. G.; Kim, M. Y.; Knop, R. A.; Lee, J. C.; Perlmutter, S.; Ruiz-Lapuente, P.; Schahmaneche, K.; Schaefer, B.; Walton, N. A.

    2002-05-28

    We present a measurement of the rate of distant Type Ia supernovae derived using 4 large subsets of data from the Supernova Cosmology Project. Within this fiducial sample, which surveyed about 12 square degrees, thirty-eight supernovae were detected at redshifts 0.25--0.85. In a spatially flat cosmological model consistent with the results obtained by the Supernova Cosmology Project, we derive a rest-frame Type Ia supernova rate at a mean red shift z {approx_equal} 0.55 of 1.53 {sub -0.25}{sub -0.31}{sup 0.28}{sup 0.32} x 10{sup -4} h{sup 3} Mpc{sup -3} yr{sup -1} or 0.58{sub -0.09}{sub -0.09}{sup +0.10}{sup +0.10} h{sup 2} SNu(1 SNu = 1 supernova per century per 10{sup 10} L{sub B}sun), where the first uncertainty is statistical and the second includes systematic effects. The dependence of the rate on the assumed cosmological parameters is studied and the redshift dependence of the rate per unit comoving volume is contrasted with local estimates in the context of possible cosmic star formation histories and progenitor models.

  16. Search for surviving companions in type Ia supernova remnants

    SciTech Connect (OSTI)

    Pan, Kuo-Chuan; Ricker, Paul M.; Taam, Ronald E. E-mail: pmricker@illinois.edu E-mail: taam@asiaa.sinica.edu.tw

    2014-09-01

    The nature of the progenitor systems of type Ia supernovae (SNe Ia) is still unclear. One way to distinguish between the single-degenerate scenario and double-degenerate scenario for their progenitors is to search for the surviving companions (SCs). Using a technique that couples the results from multi-dimensional hydrodynamics simulations with calculations of the structure and evolution of main-sequence- (MS-) and helium-rich SCs, the color and magnitude of MS- and helium-rich SCs are predicted as functions of time. The SC candidates in Galactic type Ia supernova remnants (Ia SNR) and nearby extragalactic Ia SNRs are discussed. We find that the maximum detectable distance of MS SCs (helium-rich SCs) is 0.6-4 Mpc (0.4-16 Mpc), if the apparent magnitude limit is 27 in the absence of extinction, suggesting that the Large and Small Magellanic Clouds and the Andromeda Galaxy are excellent environments in which to search for SCs. However, only five Ia SNRs have been searched for SCs, showing little support for the standard channels in the singe-degenerate scenario. To better understand the progenitors of SNe Ia, we encourage the search for SCs in other nearby Ia SNRs.

  17. THE ULTRAVIOLET BRIGHTEST TYPE Ia SUPERNOVA 2011de

    SciTech Connect (OSTI)

    Brown, Peter J., E-mail: pbrown@physics.tamu.edu [George P. and Cynthia Woods Mitchell Institute for Fundamental Physics and Astronomy, Texas A and M University, Department of Physics and Astronomy, 4242 TAMU, College Station, TX 77843 (United States)

    2014-11-20

    We present and discuss the ultraviolet (UV)/optical photometric light curves and absolute magnitudes of the TypeIa supernova (SN Ia) 2011de from the Swift Ultraviolet/Optical Telescope. We find it to be the UV brightest SN Ia yet observedmore than a factor of 10 brighter than normal SNe Ia in the mid-ultraviolet. We find that the UV/optical brightness and broad light curve evolution can be modeled with additional flux from the shock of the ejecta hitting a relatively large red giant companion separated by 6 10{sup 13} cm. However, the post-maximum behavior of other UV-bright SNe Ia can also be modeled in a similar manner, including objects with UV spectroscopy or pre-maximum photometry which is inconsistent with this model. This suggests that similar UV luminosities can be intrinsic or caused by other forms of shock interaction. The high velocities reported for SN 2011de make it distinct from the UV-bright ''super-Chandrasekhar'' SNe Ia and the NUV-blue group of normal SNe Ia. SN 2011de is an extreme example of the UV variations in SNe Ia.

  18. Atlanta Survey

    U.S. Energy Information Administration (EIA) Indexed Site

    Number of Fleets . . . . . . . . . . . . . . . 3,589 2,569 651 369 SIC Codes Ag.For.Fish. . . . . . . . . . . . . . . . . 140 65 31 Q Mining . . . . . . . . . . . . . . . . . ....

  19. DIVERSITY OF TYPE Ia SUPERNOVAE IMPRINTED IN CHEMICAL ABUNDANCES

    SciTech Connect (OSTI)

    Tsujimoto, Takuji [National Astronomical Observatory of Japan, Mitaka-shi, Tokyo 181-8588 (Japan); Shigeyama, Toshikazu, E-mail: taku.tsujimoto@nao.ac.jp [Research Center for the Early Universe, Graduate School of Science, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

    2012-12-01

    A time delay of Type Ia supernova (SN Ia) explosions hinders the imprint of their nucleosynthesis on stellar abundances. However, some occasional cases give birth to stars that avoid enrichment of their chemical compositions by massive stars and thereby exhibit an SN-Ia-like elemental feature including a very low [Mg/Fe] ( Almost-Equal-To - 1). We highlight the elemental feature of Fe-group elements for two low-Mg/Fe objects detected in nearby galaxies, and propose the presence of a class of SNe Ia that yield the low abundance ratios of [Cr, Mn, Ni/Fe]. Our novel models of chemical evolution reveal that our proposed class of SNe Ia (slow SNe Ia) is associated with ones exploding on a long timescale after their stellar birth and give a significant impact on the chemical enrichment in the Large Magellanic Cloud (LMC). In the Galaxy, on the other hand, this effect is unseen due to the overwhelming enrichment by the major class of SNe Ia that explode promptly (prompt SNe Ia) and eject a large amount of Fe-group elements. This nicely explains the different [Cr, Mn, Ni/Fe] features between the two galaxies as well as the puzzling feature seen in the LMC stars exhibiting very low Ca but normal Mg abundances. Furthermore, the corresponding channel of slow SN Ia is exemplified by performing detailed nucleosynthesis calculations in the scheme of SNe Ia resulting from a 0.8 + 0.6 M{sub Sun} white dwarf merger.

  20. Southline Transmission Line Project - Volume 1 Front Matter

    Energy Savers [EERE]

    Department of Energy Southface Energy Institute: Advanced Commercial Buildings Initiative Southface Energy Institute: Advanced Commercial Buildings Initiative Southface Energy Institute: Advanced Commercial Buildings Initiative Lead Performer: Southface Energy Institute - Atlanta, GA Partners: - City of Atlanta - Atlanta, GA - Georgia Institute of Technology - Atlanta, GA - Kendeda Fund - Atlanta, GA - Oak Ridge National Laboratory - Oak Ridge, TN - Acuity Brands Lighting - Atlanta, GA -

  1. Improved Constraints on Type Ia Supernova Host Galaxy Properties using

    Office of Scientific and Technical Information (OSTI)

    Multi-Wavelength Photometry and their Correlations with Supernova Properties (Journal Article) | SciTech Connect Improved Constraints on Type Ia Supernova Host Galaxy Properties using Multi-Wavelength Photometry and their Correlations with Supernova Properties Citation Details In-Document Search Title: Improved Constraints on Type Ia Supernova Host Galaxy Properties using Multi-Wavelength Photometry and their Correlations with Supernova Properties We improve estimates of the stellar mass and

  2. Climate Action Champions: Dubuque, IA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Dubuque, IA Climate Action Champions: Dubuque, IA The City of Dubuque, Iowa, features a rich history, a diverse arts and cultural scene, and abundant natural beauty, including majestic limestone bluffs along the Mississippi riverfront. Sustainability is among the city’s top priorities for the future. | Photo courtesy of the City of Dubuque. The City of Dubuque, Iowa, features a rich history, a diverse arts and cultural scene, and abundant natural beauty, including majestic limestone bluffs

  3. CEPHEID CALIBRATIONS OF MODERN TYPE Ia SUPERNOVAE: IMPLICATIONS FOR THE

    Office of Scientific and Technical Information (OSTI)

    HUBBLE CONSTANT (Journal Article) | SciTech Connect CEPHEID CALIBRATIONS OF MODERN TYPE Ia SUPERNOVAE: IMPLICATIONS FOR THE HUBBLE CONSTANT Citation Details In-Document Search Title: CEPHEID CALIBRATIONS OF MODERN TYPE Ia SUPERNOVAE: IMPLICATIONS FOR THE HUBBLE CONSTANT This is the first of two papers reporting measurements from a program to determine the Hubble constant to {approx}5% precision from a refurbished distance ladder. We present new observations of 110 Cepheid variables in the

  4. DOE - Office of Legacy Management -- Iowa Army Ammunition Plant - IA 02

    Office of Legacy Management (LM)

    Army Ammunition Plant - IA 02 FUSRAP Considered Sites Iowa Army Ammunition Plant, IA Alternate Name(s): Burlington Ordnance Plant Iowa Ordnance Plant Silas Mason Company IA.02-3 Location: Located in Township 70 North, Range 3 West, Section 32, 5th Principal Meridian, Des Moines County, Burlington, Iowa IA.02-1 IA.02-5 Historical Operations: Assembled nuclear weapons, primarily high explosive components and conducted explosives testing using the high explosive components and depleted uranium. AEC

  5. Making it pay in Athens, GA

    SciTech Connect (OSTI)

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  6. Turbulence-Flame Interactions in Type Ia Supernovae (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Journal Article: Turbulence-Flame Interactions in Type Ia Supernovae Citation Details In-Document Search Title: Turbulence-Flame Interactions in Type Ia Supernovae × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and technology. A paper copy of

  7. Color dispersion and Milky-Way-like reddening among type Ia supernovae...

    Office of Scientific and Technical Information (OSTI)

    Color dispersion and Milky-Way-like reddening among type Ia supernovae Citation Details In-Document Search Title: Color dispersion and Milky-Way-like reddening among type Ia ...

  8. CfA3: 185 TYPE Ia SUPERNOVA LIGHT CURVES FROM THE CfA (Journal...

    Office of Scientific and Technical Information (OSTI)

    We find that 1991bg-like SNe Ia are sufficiently distinct from other SNe Ia in their color ... reddening from intrinsic supernova color, reducing the systematic uncertainty in SN ...

  9. A Chandrasekhar mass progenitor for the Type Ia supernova remnant 3C 397

    Office of Scientific and Technical Information (OSTI)

    from the enhanced abundances of nickel and manganese (Journal Article) | SciTech Connect A Chandrasekhar mass progenitor for the Type Ia supernova remnant 3C 397 from the enhanced abundances of nickel and manganese Citation Details In-Document Search Title: A Chandrasekhar mass progenitor for the Type Ia supernova remnant 3C 397 from the enhanced abundances of nickel and manganese Despite decades of intense efforts, many fundamental aspects of Type Ia supernovae (SNe Ia) remain elusive. One

  10. SN 2006bt: A PERPLEXING, TROUBLESOME, AND POSSIBLY MISLEADING TYPE Ia

    Office of Scientific and Technical Information (OSTI)

    SUPERNOVA (Journal Article) | SciTech Connect SN 2006bt: A PERPLEXING, TROUBLESOME, AND POSSIBLY MISLEADING TYPE Ia SUPERNOVA Citation Details In-Document Search Title: SN 2006bt: A PERPLEXING, TROUBLESOME, AND POSSIBLY MISLEADING TYPE Ia SUPERNOVA SN 2006bt displays characteristics unlike those of any other known Type Ia supernova (SN Ia). We present optical light curves and spectra of SN 2006bt which demonstrate the peculiar nature of this object. SN 2006bt has broad, slowly declining

  11. Type Ia supernovae from merging white dwarfs. II. Post-merger detonations

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Type Ia supernovae from merging white dwarfs. II. Post-merger detonations Citation Details In-Document Search Title: Type Ia supernovae from merging white dwarfs. II. Post-merger detonations Merging carbon-oxygen (CO) white dwarfs are a promising progenitor system for Type Ia supernovae (SNe Ia), but the underlying physics and timing of the detonation are still debated. If an explosion occurs after the secondary star is fully disrupted, the exploding

  12. A STUDY OF CARBON FEATURES IN TYPE Ia SUPERNOVA SPECTRA (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect A STUDY OF CARBON FEATURES IN TYPE Ia SUPERNOVA SPECTRA Citation Details In-Document Search Title: A STUDY OF CARBON FEATURES IN TYPE Ia SUPERNOVA SPECTRA One of the major differences between various explosion scenarios of Type Ia supernovae (SNe Ia) is the remaining amount of unburned (C+O) material and its velocity distribution within the expanding ejecta. While oxygen absorption features are not uncommon in the spectra of SNe Ia before maximum light, the presence of strong

  13. An Analysis of Department of Defense Instruction 8500.2 'Information Assurance (IA) Implementation.'

    SciTech Connect (OSTI)

    Campbell, Philip LaRoche

    2012-01-01

    The Department of Defense (DoD) provides its standard for information assurance in its Instruction 8500.2, dated February 6, 2003. This Instruction lists 157 'IA Controls' for nine 'baseline IA levels.' Aside from distinguishing IA Controls that call for elevated levels of 'robustness' and grouping the IA Controls into eight 'subject areas' 8500.2 does not examine the nature of this set of controls, determining, for example, which controls do not vary in robustness, how this set of controls compares with other such sets, or even which controls are required for all nine baseline IA levels. This report analyzes (1) the IA Controls, (2) the subject areas, and (3) the Baseline IA levels. For example, this report notes that there are only 109 core IA Controls (which this report refers to as 'ICGs'), that 43 of these core IA Controls apply without variation to all nine baseline IA levels and that an additional 31 apply with variations. This report maps the IA Controls of 8500.2 to the controls in NIST 800-53 and ITGI's CoBIT. The result of this analysis and mapping, as shown in this report, serves as a companion to 8500.2. (An electronic spreadsheet accompanies this report.)

  14. Type Ia Supernova Spectral Line Ratios as LuminosityIndicators

    SciTech Connect (OSTI)

    Bongard, Sebastien; Baron, E.; Smadja, G.; Branch, David; Hauschildt, Peter H.

    2005-12-07

    Type Ia supernovae have played a crucial role in thediscovery of the dark energy, via the measurement of their light curvesand the determination of the peak brightness via fitting templates to theobserved lightcurve shape. Two spectroscopic indicators are also known tobe well correlated with peak luminosity. Since the spectroscopicluminosity indicators are obtained directly from observed spectra, theywill have different systematic errors than do measurements usingphotometry. Additionally, these spectroscopic indicators may be usefulfor studies of effects of evolution or age of the SNe~;Ia progenitorpopulation. We present several new variants of such spectroscopicindicators which are easy to automate and which minimize the effects ofnoise. We show that these spectroscopic indicators can be measured byproposed JDEM missions such as snap and JEDI.

  15. Power-law cosmology, SN Ia, and BAO

    SciTech Connect (OSTI)

    Dolgov, Aleksander; Halenka, Vitali; Tkachev, Igor E-mail: vithal@umich.edu

    2014-10-01

    We revise observational constraints on the class of models of modified gravity which at low redshifts lead to a power-law cosmology. To this end we use available public data on Supernova Ia and on baryon acoustic oscillations. We show that the expansion regime a(t)?t{sup ?} with ? close to 3/2 in a spatially flat universe is a good fit to these data.

  16. Microsoft PowerPoint - IEEE IAS PES 102313.pptx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE's ARRA Smart Grid Program Steve Bossart, Senior Energy Analyst IEEE IAS/PES Pittsburgh Section October 23, 2013 # Topics * OE ARRA Smart Grid Program * OE ARRA Smart Grid Progress * Results and Case Studies * Life After ARRA Smart Grid # DOE OE ARRA Smart Grid Program # American Recovery and Reinvestment Act ($4.5B) * Smart Grid Investment Grants (99 projects) - $3.4 billion Federal; $4.7 billion private sector - > 800 PMUs covering almost 100% of transmission - ~ 8000 distribution

  17. Signatures of a companion star in type Ia supernovae

    SciTech Connect (OSTI)

    Maeda, Keiichi; Kutsuna, Masamichi; Shigeyama, Toshikazu

    2014-10-10

    Although type Ia supernovae (SNe Ia) have been used as precise cosmological distance indicators, their progenitor systems remain unresolved. One of the key questions is whether there is a nondegenerate companion star at the time of a thermonuclear explosion of a white dwarf. In this paper, we investigate whether an interaction between the SN ejecta and the companion star may result in observable footprints around the maximum brightness and thereafter, by performing multidimensional radiation transfer simulations based on hydrodynamic simulations of the interaction. We find that such systems result in variations in various observational characteristics due to different viewing directions, and the predicted behaviors (redder and fainter for the companion direction) are the opposite of what were suggested by the previous study. The variations are generally modest and within observed scatters. However, the model predicts trends between some observables different from those observationally derived, so a large sample of SNe Ia with small calibration errors may be used to constrain the existence of such a companion star. The variations in different colors in optical band passes can be mimicked by external extinctions, so such an effect could be a source of scatter in the peak luminosity and derived distance. After the peak, hydrogen-rich materials expelled from the companion will manifest themselves in hydrogen lines, but Hα is extremely difficult to identify. Alternatively, we find that P{sub β} in postmaximum near-infrared spectra can potentially provide a powerful diagnostic.

  18. Urban airshed modeling of air quality impacts of alternative transportation fuel use in Los Angeles and Atlanta

    SciTech Connect (OSTI)

    NONE

    1997-12-01

    The main objective of NREL in supporting this study is to determine the relative air quality impact of the use of compressed natural gas (CNG) as an alternative transportation fuel when compared to low Reid vapor pressure (RVP) gasoline and reformulated gasoline (RFG). A table lists the criteria, air toxic, and greenhouse gas pollutants for which emissions were estimated for the alternative fuel scenarios. Air quality impacts were then estimated by performing photochemical modeling of the alternative fuel scenarios using the Urban Airshed Model Version 6.21 and the Carbon Bond Mechanism Version IV (CBM-IV) (Geary et al., 1988) Using this model, the authors examined the formation and transport of ozone under alternative fuel strategies for motor vehicle transportation sources for the year 2007. Photochemical modeling was performed for modeling domains in Los Angeles, California, and Atlanta, Georgia.

  19. Workplace Charging Challenge Partner: Hannah Solar, LLC | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Workplace Charging Challenge Partner: Hannah Solar, LLC Joined the Challenge: June 2014 Headquarters: Atlanta, GA Charging Location: Atlanta, GA Domestic Employees: 25 Hannah Solar ...

  20. Workplace Charging Challenge Partner: Georgia Institute of Technology...

    Energy Savers [EERE]

    Workplace Charging Challenge Partner: Georgia Institute of Technology Joined the Challenge: February 2014 Headquarters: Atlanta, GA Charging Location: Atlanta, GA Domestic ...

  1. Implementing Equipment Based Obligations Presentation

    National Nuclear Security Administration (NNSA)

    Implementation Workshop January 13, 2 Obligations Accounting Implementation Workshop January 13, 2004 004 Crowne Crowne Plaza Plaza Ravinia Ravinia Atlanta, GA Atlanta, GA page ...

  2. A SEARCH FOR NEW CANDIDATE SUPER-CHANDRASEKHAR-MASS TYPE Ia SUPERNOVAE IN

    Office of Scientific and Technical Information (OSTI)

    THE NEARBY SUPERNOVA FACTORY DATA SET (Journal Article) | SciTech Connect A SEARCH FOR NEW CANDIDATE SUPER-CHANDRASEKHAR-MASS TYPE Ia SUPERNOVAE IN THE NEARBY SUPERNOVA FACTORY DATA SET Citation Details In-Document Search Title: A SEARCH FOR NEW CANDIDATE SUPER-CHANDRASEKHAR-MASS TYPE Ia SUPERNOVAE IN THE NEARBY SUPERNOVA FACTORY DATA SET We present optical photometry and spectroscopy of five Type Ia supernovae discovered by the Nearby Supernova Factory selected to be spectroscopic analogs

  3. Color dispersion and Milky-Way-like reddening among type Ia supernovae

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Color dispersion and Milky-Way-like reddening among type Ia supernovae Citation Details In-Document Search Title: Color dispersion and Milky-Way-like reddening among type Ia supernovae Past analyses of Type Ia supernovae have identified an irreducible scatter of 5%-10% in distance, widely attributed to an intrinsic dispersion in luminosity. Another equally valid source of this scatter is intrinsic dispersion in color. Misidentification of the true source

  4. Type Ia Supernova Hubble Residuals and Host-Galaxy Properties (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Journal Article: Type Ia Supernova Hubble Residuals and Host-Galaxy Properties Citation Details In-Document Search Title: Type Ia Supernova Hubble Residuals and Host-Galaxy Properties Kim et al. (2013) [K13] introduced a new methodology for determining peak- brightness absolute magnitudes of type Ia supernovae from multi-band light curves. We examine the relation between their parameterization of light curves and Hubble residuals, based on photometry synthesized

  5. Type Ia supernovae yielding distances with 3-4% precision (Journal Article)

    Office of Scientific and Technical Information (OSTI)

    | SciTech Connect Type Ia supernovae yielding distances with 3-4% precision Citation Details In-Document Search Title: Type Ia supernovae yielding distances with 3-4% precision The luminosities of Type Ia supernovae (SN), the thermonuclear explosions of white dwarf stars, vary systematically with their intrinsic color and light-curve decline rate. These relationships have been used to calibrate their luminosities to within ~0.14-0.20 mag from broadband optical light curves, yielding

  6. VARIABLE SODIUM ABSORPTION IN A LOW-EXTINCTION TYPE Ia SUPERNOVA (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect VARIABLE SODIUM ABSORPTION IN A LOW-EXTINCTION TYPE Ia SUPERNOVA Citation Details In-Document Search Title: VARIABLE SODIUM ABSORPTION IN A LOW-EXTINCTION TYPE Ia SUPERNOVA Recent observations have revealed that some Type Ia supernovae exhibit narrow, time-variable Na I D absorption features. The origin of the absorbing material is controversial, but it may suggest the presence of circumstellar gas in the progenitor system prior to the explosion, with significant

  7. The Carnegie Supernova Project: Intrinsic colors of type Ia supernovae

    SciTech Connect (OSTI)

    Burns, Christopher R.; Persson, S. E.; Freedman, Wendy L.; Madore, Barry F. [Observatories of the Carnegie Institution for Science, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); Stritzinger, Maximilian; Contreras, Carlos [Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C (Denmark); Phillips, M. M.; Hsiao, E. Y.; Boldt, Luis; Campillay, Abdo; Castelln, Sergio; Morrell, Nidia; Salgado, Francisco [Carnegie Institution of Washington, Las Campanas Observatory, Colina El Pino, Casilla 601 (Chile); Folatelli, Gaston [Kavli Institute for the Physics and Mathematics of the Universe, Todai Institutes for Advanced Study, the University of Tokyo, 277-8583 Kashiwa (Japan); Suntzeff, Nicholas B. [George P. and Cynthia Woods Mitchell Institute for Fundamental Physics and Astronomy, Texas A and M University, Department of Physics and Astronomy, College Station, TX 77843 (United States)

    2014-07-01

    We present an updated analysis of the intrinsic colors of Type Ia supernova (SNe Ia) using the latest data release of the Carnegie Supernova Project. We introduce a new light-curve parameter very similar to stretch that is better suited for fast-declining events, and find that these peculiar types can be seen as extensions to the population of 'normal' SNe Ia. With a larger number of objects, an updated fit to the Lira relation is presented along with evidence for a dependence on the late-time slope of the B V light-curves with stretch and color. Using the full wavelength range from u to H band, we place constraints on the reddening law for the sample as a whole and also for individual events/hosts based solely on the observed colors. The photometric data continue to favor low values of R{sub V} , though with large variations from event to event, indicating an intrinsic distribution. We confirm the findings of other groups that there appears to be a correlation between the derived reddening law, R{sub V} , and the color excess, E(B V), such that larger E(B V) tends to favor lower R{sub V} . The intrinsic u-band colors show a relatively large scatter that cannot be explained by variations in R{sub V} or by the Goobar power-law for circumstellar dust, but rather is correlated with spectroscopic features of the supernova and is therefore likely due to metallicity effects.

  8. HUBBLE RESIDUALS OF NEARBY TYPE Ia SUPERNOVAE ARE CORRELATED WITH HOST

    Office of Scientific and Technical Information (OSTI)

    GALAXY MASSES (Journal Article) | SciTech Connect HUBBLE RESIDUALS OF NEARBY TYPE Ia SUPERNOVAE ARE CORRELATED WITH HOST GALAXY MASSES Citation Details In-Document Search Title: HUBBLE RESIDUALS OF NEARBY TYPE Ia SUPERNOVAE ARE CORRELATED WITH HOST GALAXY MASSES From Sloan Digital Sky Survey u'g'r'i'z' imaging, we estimate the stellar masses of the host galaxies of 70 low-redshift Type Ia supernovae (SNe Ia, 0.015 <z< 0.08) from the hosts' absolute luminosities and mass-to-light

  9. IMPROVED DARK ENERGY CONSTRAINTS FROM {approx}100 NEW CfA SUPERNOVA TYPE Ia

    Office of Scientific and Technical Information (OSTI)

    LIGHT CURVES (Journal Article) | SciTech Connect IMPROVED DARK ENERGY CONSTRAINTS FROM {approx}100 NEW CfA SUPERNOVA TYPE Ia LIGHT CURVES Citation Details In-Document Search Title: IMPROVED DARK ENERGY CONSTRAINTS FROM {approx}100 NEW CfA SUPERNOVA TYPE Ia LIGHT CURVES We combine the CfA3 supernovae Type Ia (SN Ia) sample with samples from the literature to calculate improved constraints on the dark energy equation of state parameter, w. The CfA3 sample is added to the Union set of Kowalski

  10. Improved Dark Energy Constraints From ~ 100 New CfA Supernova Type Ia Light

    Office of Scientific and Technical Information (OSTI)

    Curves (Journal Article) | SciTech Connect Improved Dark Energy Constraints From ~ 100 New CfA Supernova Type Ia Light Curves Citation Details In-Document Search Title: Improved Dark Energy Constraints From ~ 100 New CfA Supernova Type Ia Light Curves We combine the CfA3 supernovae Type Ia (SN Ia) sample with samples from the literature to calculate improved constraints on the dark energy equation of state parameter, w. The CfA3 sample is added to the Union set of Kowalski et al. to form the

  11. Improved Distances to Type Ia Supernovae withMulticolor Light Curve Shapes:

    Office of Scientific and Technical Information (OSTI)

    MLCS2k2 (Journal Article) | SciTech Connect Improved Distances to Type Ia Supernovae withMulticolor Light Curve Shapes: MLCS2k2 Citation Details In-Document Search Title: Improved Distances to Type Ia Supernovae withMulticolor Light Curve Shapes: MLCS2k2 We present an updated version of the Multicolor Light Curve Shape method to measure distances to type Ia supernovae (SN Ia), incorporating new procedures for K-correction and extinction corrections. We also develop a simple model to

  12. THE HYBRID CONe WD + He STAR SCENARIO FOR THE PROGENITORS OF TYPE Ia SUPERNOVAE

    SciTech Connect (OSTI)

    Wang, B.; Meng, X.; Liu, D.-D.; Han, Z.; Liu, Z.-W.

    2014-10-20

    Hybrid CONe white dwarfs (WDs) have been suggested to be possible progenitors of type Ia supernovae (SNe Ia). In this Letter, we systematically studied the hybrid CONe WD + He star scenario for the progenitors of SNe Ia, in which a hybrid CONe WD increases its mass to the Chandrasekhar mass limit by accreting He-rich material from a non-degenerate He star. We obtained the SN Ia birthrates and delay times for this scenario using to a series of detailed binary population synthesis simulations. The SN Ia birthrates for this scenario are ∼0.033-0.539 × 10{sup –3} yr{sup –1}, which roughly accounts for 1%-18% of all SNe Ia. The estimated delay times are ∼28 Myr-178 Myr, which makes these the youngest SNe Ia predicted by any progenitor model so far. We suggest that SNe Ia from this scenario may provide an alternative explanation for type Iax SNe. We also presented some properties of the donors at the point when the WDs reach the Chandrasekhar mass. These properties may be a good starting point for investigating the surviving companions of SNe Ia and for constraining the progenitor scenario studied in this work.

  13. Improved Dark Energy Constraints From ~ 100 New CfA Supernova Type Ia Light

    Office of Scientific and Technical Information (OSTI)

    Curves (Journal Article) | SciTech Connect Journal Article: Improved Dark Energy Constraints From ~ 100 New CfA Supernova Type Ia Light Curves Citation Details In-Document Search Title: Improved Dark Energy Constraints From ~ 100 New CfA Supernova Type Ia Light Curves We combine the CfA3 supernovae Type Ia (SN Ia) sample with samples from the literature to calculate improved constraints on the dark energy equation of state parameter, w. The CfA3 sample is added to the Union set of Kowalski

  14. Sweetspot: Near-infrared observations of 13 type Ia supernovae from a new

    Office of Scientific and Technical Information (OSTI)

    NOAO survey probing the nearby smooth Hubble flow (Journal Article) | SciTech Connect Sweetspot: Near-infrared observations of 13 type Ia supernovae from a new NOAO survey probing the nearby smooth Hubble flow Citation Details In-Document Search Title: Sweetspot: Near-infrared observations of 13 type Ia supernovae from a new NOAO survey probing the nearby smooth Hubble flow We present 13 Type Ia supernovae (SNe Ia) observed in the rest-frame near-infrared (NIR) from 0.02 < z < 0.09

  15. THE ABSOLUTE MAGNITUDES OF TYPE Ia SUPERNOVAE IN THE ULTRAVIOLET (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect THE ABSOLUTE MAGNITUDES OF TYPE Ia SUPERNOVAE IN THE ULTRAVIOLET Citation Details In-Document Search Title: THE ABSOLUTE MAGNITUDES OF TYPE Ia SUPERNOVAE IN THE ULTRAVIOLET We examine the absolute magnitudes and light-curve shapes of 14 nearby (redshift z = 0.004-0.027) Type Ia supernovae (SNe Ia) observed in the ultraviolet (UV) with the Swift Ultraviolet/Optical Telescope. Colors and absolute magnitudes are calculated using both a standard Milky Way extinction

  16. Grouping normal type Ia supernovae by UV to optical color differences

    SciTech Connect (OSTI)

    Milne, Peter A.; Brown, Peter J.; Roming, Peter W. A.; Bufano, Filomena; Gehrels, Neil

    2013-12-10

    Observations of many Type Ia supernovae (SNe Ia) for multiple epochs per object with the Swift Ultraviolet Optical Telescope instrument have revealed that there exists order to the differences in the UV-optical colors of optically normal supernovae (SNe). We examine UV-optical color curves for 23 SNe Ia, dividing the SNe into four groups, and find that roughly one-third of 'NUV-blue' SNe Ia have bluer UV-optical colors than the larger 'NUV-red' group. Two minor groups are recognized, 'MUV-blue' and 'irregular' SNe Ia. While we conclude that the latter group is a subset of the NUV-red group, containing the SNe with the broadest optical peaks, we conclude that the 'MUV-blue' group is a distinct group. Separating into the groups and accounting for the time evolution of the UV-optical colors lowers the scatter in two NUV-optical colors (e.g., u v and uvw1 v) to the level of the scatter in b v. This finding is promising for extending the cosmological utilization of SNe Ia into the NUV. We generate spectrophotometry of 33 SNe Ia and determine the correct grouping for each. We argue that there is a fundamental spectral difference in the 2900-3500 wavelength range, a region suggested to be dominated by absorption from iron-peak elements. The NUV-blue SNe Ia feature less absorption than the NUV-red SNe Ia. We show that all NUV-blue SNe Ia in this sample also show evidence of unburned carbon in optical spectra, whereas only one NUV-red SN Ia features that absorption line. Every NUV-blue event also exhibits a low gradient of the Si II ?6355 absorption feature. Many NUV-red events also exhibit a low gradient, perhaps suggestive that NUV-blue events are a subset of the larger low-velocity gradient group.

  17. THE BIRTH RATE OF SNe Ia FROM HYBRID CONe WHITE DWARFS

    SciTech Connect (OSTI)

    Meng, Xiangcun [Yunnan Observatories, Chinese Academy of Sciences, Kunming 650011 (China); Podsiadlowski, Philipp, E-mail: xiangcunmeng@ynao.ac.cn [Department of Astronomy, Oxford University, Oxford OX1 3RH (United Kingdom)

    2014-07-10

    Considering the uncertainties of the C-burning rate (CBR) and the treatment of convective boundaries, Chen et al. found that there is a regime where it is possible to form hybrid CONe white dwarfs (WDs), i.e., ONe WDs with carbon-rich cores. As these hybrid WDs can be as massive as 1.30 M {sub ?}, not much mass needs to be accreted for these objects to reach the Chandrasekhar limit and to explode as Type Ia supernovae (SNe Ia). We have investigated their contribution to the overall SN Ia birth rate and found that such SNe Ia tend to be relatively young with typical time delays between 0.1 and 1 Gyr, where some may be as young as 30 Myr. SNe Ia from hybrid CONe WDs may contribute several percent to all SNe Ia, depending on the common-envelope ejection efficiency and the CBR. We suggest that these SNe Ia may produce part of the 2002cx-like SN Ia class.

  18. On silicon group elements ejected by supernovae type IA

    SciTech Connect (OSTI)

    De, Soma; Timmes, F. X. [School of Earth and Space Exploration, Arizona State University, Tempe, AZ (United States); Brown, Edward F. [Joint Institute for Nuclear Astrophysics, University of Notre Dame, IN 46556 (United States); Calder, Alan C. [Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY (United States); Townsley, Dean M. [Department of Physics and Astronomy, The University of Alabama, Tuscaloosa, AL (United States); Athanassiadou, Themis [Swiss National Supercomputing Centre, Via Trevano 131, 6900 Lugano (Switzerland); Chamulak, David A. [Physics Division, Argonne National Laboratory, Argonne, IL (United States); Hawley, Wendy [Laboratoire d'Astrophysique de Marseille, Marseille cedex 13 F-13388 (France); Jack, Dennis, E-mail: somad@asu.edu [Departamento de Astronoma, Universidad de Guanajuato, Apartado Postal 144, 36000 Guanajuato (Mexico)

    2014-06-01

    There is evidence that the peak brightness of a Type Ia supernova is affected by the electron fraction Y {sub e} at the time of the explosion. The electron fraction is set by the aboriginal composition of the white dwarf and the reactions that occur during the pre-explosive convective burning. To date, determining the makeup of the white dwarf progenitor has relied on indirect proxies, such as the average metallicity of the host stellar population. In this paper, we present analytical calculations supporting the idea that the electron fraction of the progenitor systematically influences the nucleosynthesis of silicon group ejecta in Type Ia supernovae. In particular, we suggest the abundances generated in quasi-nuclear statistical equilibrium are preserved during the subsequent freeze-out. This allows potential recovery of Y {sub e} at explosion from the abundances recovered from an observed spectra. We show that measurement of {sup 28}Si, {sup 32}S, {sup 40}Ca, and {sup 54}Fe abundances can be used to construct Y {sub e} in the silicon-rich regions of the supernovae. If these four abundances are determined exactly, they are sufficient to recover Y {sub e} to 6%. This is because these isotopes dominate the composition of silicon-rich material and iron-rich material in quasi-nuclear statistical equilibrium. Analytical analysis shows the {sup 28}Si abundance is insensitive to Y {sub e}, the {sup 32}S abundance has a nearly linear trend with Y {sub e}, and the {sup 40}Ca abundance has a nearly quadratic trend with Y {sub e}. We verify these trends with post-processing of one-dimensional models and show that these trends are reflected in the model's synthetic spectra.

  19. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  20. HIGH-VELOCITY LINE FORMING REGIONS IN THE TYPE Ia SUPERNOVA 2009ig (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect VELOCITY LINE FORMING REGIONS IN THE TYPE Ia SUPERNOVA 2009ig Citation Details In-Document Search Title: HIGH-VELOCITY LINE FORMING REGIONS IN THE TYPE Ia SUPERNOVA 2009ig We report measurements and analysis of high-velocity (HVF) (>20,000 km s{sup -1}) and photospheric absorption features in a series of spectra of the Type Ia supernova (SN) 2009ig obtained between -14 days and +13 days with respect to the time of maximum B-band luminosity (B-max). We identify

  1. Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses Citation Details In-Document Search Title: Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses From Sloan Digital Sky Survey u{prime} g{prime} r{prime} i{prime} z{prime} imaging, we estimate the stellar masses of the host galaxies of 70 low redshift SN Ia (0.015 < z < 0.08) from the hosts absolute luminosities and mass-to-light ratios. These nearby SN were

  2. ASYMMETRY IN THE OBSERVED METAL-RICH EJECTA OF THE GALACTIC TYPE IA

    Office of Scientific and Technical Information (OSTI)

    SUPERNOVA REMNANT G299.2-2.9 (Journal Article) | SciTech Connect ASYMMETRY IN THE OBSERVED METAL-RICH EJECTA OF THE GALACTIC TYPE IA SUPERNOVA REMNANT G299.2-2.9 Citation Details In-Document Search Title: ASYMMETRY IN THE OBSERVED METAL-RICH EJECTA OF THE GALACTIC TYPE IA SUPERNOVA REMNANT G299.2-2.9 We have performed a deep Chandra observation of the Galactic Type Ia supernova remnant G299.2-2.9. Here we report the initial results from our imaging and spectral analysis. The observed

  3. File:USDA-CE-Production-GIFmaps-IA.pdf | Open Energy Information

    Open Energy Info (EERE)

    IA.pdf Jump to: navigation, search File File history File usage Iowa Ethanol Plant Locations Size of this preview: 776 600 pixels. Full resolution (1,650 1,275 pixels,...

  4. "Report Date","U.S.",,,"PADD I",,,"PADD IA",,,"PADD IB",,,"PADD...

    U.S. Energy Information Administration (EIA) Indexed Site

    I",,,"PADD IA",,,"PADD IB",,,"PADD IC",,,"PADD II" ,"Old Reported Value ( per Gallon)","New Revised Value ( per Gallon)","Difference","Old Reported Value ( per Gallon)","New ...

  5. Flames in Type Ia Supernova: Deflagration-Detonation Transition in the

    Office of Scientific and Technical Information (OSTI)

    Oxygen Burning Flame. (Journal Article) | SciTech Connect Journal Article: Flames in Type Ia Supernova: Deflagration-Detonation Transition in the Oxygen Burning Flame. Citation Details In-Document Search Title: Flames in Type Ia Supernova: Deflagration-Detonation Transition in the Oxygen Burning Flame. Abstract not provided. Authors: Kerstein, Alan R. ; Woosley, Stan E. ; Aspden, Andrew J. Publication Date: 2010-10-01 OSTI Identifier: 1121667 Report Number(s): SAND2010-7483J 485788 DOE

  6. New approaches for modeling type Ia supernovae (Conference) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect Conference: New approaches for modeling type Ia supernovae Citation Details In-Document Search Title: New approaches for modeling type Ia supernovae × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and technology. A paper copy of this document is also

  7. Cosmological parameter uncertainties from SALT-II type Ia supernova light curve models

    SciTech Connect (OSTI)

    Mosher, J.; Sako, M. [Department of Physics and Astronomy, University of Pennsylvania, 209 South 33rd Street, Philadelphia, PA 19104 (United States); Guy, J.; Astier, P.; Betoule, M.; El-Hage, P.; Pain, R.; Regnault, N. [LPNHE, CNRS/IN2P3, Universit Pierre et Marie Curie Paris 6, Universi Denis Diderot Paris 7, 4 place Jussieu, F-75252 Paris Cedex 05 (France); Kessler, R.; Frieman, J. A. [Kavli Institute for Cosmological Physics, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Marriner, J. [Center for Particle Astrophysics, Fermi National Accelerator Laboratory, P.O. Box 500, Batavia, IL 60510 (United States); Biswas, R.; Kuhlmann, S. [Argonne National Laboratory, 9700 South Cass Avenue, Lemont, IL 60439 (United States); Schneider, D. P., E-mail: kessler@kicp.chicago.edu [Department of Astronomy and Astrophysics, The Pennsylvania State University, University Park, PA 16802 (United States)

    2014-09-20

    We use simulated type Ia supernova (SN Ia) samples, including both photometry and spectra, to perform the first direct validation of cosmology analysis using the SALT-II light curve model. This validation includes residuals from the light curve training process, systematic biases in SN Ia distance measurements, and a bias on the dark energy equation of state parameter w. Using the SN-analysis package SNANA, we simulate and analyze realistic samples corresponding to the data samples used in the SNLS3 analysis: ?120 low-redshift (z < 0.1) SNe Ia, ?255 Sloan Digital Sky Survey SNe Ia (z < 0.4), and ?290 SNLS SNe Ia (z ? 1). To probe systematic uncertainties in detail, we vary the input spectral model, the model of intrinsic scatter, and the smoothing (i.e., regularization) parameters used during the SALT-II model training. Using realistic intrinsic scatter models results in a slight bias in the ultraviolet portion of the trained SALT-II model, and w biases (w {sub input} w {sub recovered}) ranging from 0.005 0.012 to 0.024 0.010. These biases are indistinguishable from each other within the uncertainty; the average bias on w is 0.014 0.007.

  8. Search for: All records | SciTech Connect

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    Photon Source, Argonne, IL (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United ...

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    ... Clark Atlanta University (Atlanta, Ga.) - Engineering Accessible Adsorption Sites in Metal Organic Frameworks for CO2 Capture. Metal organic frameworks (MOFs) are a newer class of ...

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    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Boston College, Boston, MA Boston University, Boston, MA California Institute of Technology, Pasadena, CA Clark Atlanta University, Atlanta, GA Colorado State University, Fort ...

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    ... U. S. Environmental Protection Agency, Region 4 Oak Ridge Reservation Federal Facility Agreement Project Manager (4WD-FFB) Atlanta Federal Center 61 Forsyth Street, SW Atlanta, GA ...

  14. SciTech Connect: Your connection to science, technology, and...

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    Photon Source, Argonne, IL (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United ...

  15. Search for: All records | SciTech Connect

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    Photon Source, Argonne, IL (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United...

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    IL (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United States) Battelle Memorial...

  17. Type Ia supernovae from merging white dwarfs. II. Post-merger detonations

    SciTech Connect (OSTI)

    Raskin, Cody; Kasen, Daniel [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Moll, Rainer; Woosley, Stan [Department of Physics and Department of Astronomy, University of California, Santa Cruz, CA (United States); Schwab, Josiah [Department of Physics and Department of Astronomy, University of California, Berkeley, CA (United States)

    2014-06-10

    Merging carbon-oxygen (CO) white dwarfs are a promising progenitor system for Type Ia supernovae (SNe Ia), but the underlying physics and timing of the detonation are still debated. If an explosion occurs after the secondary star is fully disrupted, the exploding primary will expand into a dense CO medium that may still have a disk-like structure. This interaction will decelerate and distort the ejecta. Here we carry out multidimensional simulations of 'tamped' SN Ia models, using both particle and grid-based codes to study the merger and explosion dynamics and a radiative transfer code to calculate synthetic spectra and light curves. We find that post-merger explosions exhibit an hourglass-shaped asymmetry, leading to strong variations in the light curves with viewing angle. The two most important factors affecting the outcome are the scale height of the disk, which depends sensitively on the binary mass ratio, and the total {sup 56}Ni yield, which is governed by the central density of the remnant core. The synthetic broadband light curves rise and decline very slowly, and the spectra generally look peculiar, with weak features from intermediate mass elements but relatively strong carbon absorption. We also consider the effects of the viscous evolution of the remnant and show that a longer time delay between merger and explosion probably leads to larger {sup 56}Ni yields and more symmetrical remnants. We discuss the relevance of this class of aspherical 'tamped' SN Ia for explaining the class of 'super-Chandrasekhar' SN Ia.

  18. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  19. Ultraviolet observations of Super-Chandrasekhar mass type Ia supernova candidates with swift UVOT

    SciTech Connect (OSTI)

    Brown, Peter J.; Smitka, Michael T.; Krisciunas, Kevin; Wang, Lifan; Kuin, Paul; De Pasquale, Massimiliano; Scalzo, Richard; Holland, Stephen; Milne, Peter

    2014-05-20

    Among Type Ia supernovae (SNe Ia), a class of overluminous objects exist whose ejecta mass is inferred to be larger than the canonical Chandrasekhar mass. We present and discuss the UV/optical photometric light curves, colors, absolute magnitudes, and spectra of three candidate Super-Chandrasekhar mass SNe—2009dc, 2011aa, and 2012dn—observed with the Swift Ultraviolet/Optical Telescope. The light curves are at the broad end for SNe Ia, with the light curves of SN 2011aa being among the broadest ever observed. We find all three to have very blue colors which may provide a means of excluding these overluminous SNe from cosmological analysis, though there is some overlap with the bluest of 'normal' SNe Ia. All three are overluminous in their UV absolute magnitudes compared to normal and broad SNe Ia, but SNe 2011aa and 2012dn are not optically overluminous compared to normal SNe Ia. The integrated luminosity curves of SNe 2011aa and 2012dn in the UVOT range (1600-6000 Å) are only half as bright as SN 2009dc, implying a smaller {sup 56}Ni yield. While it is not enough to strongly affect the bolometric flux, the early time mid-UV flux makes a significant contribution at early times. The strong spectral features in the mid-UV spectra of SNe 2009dc and 2012dn suggest a higher temperature and lower opacity to be the cause of the UV excess rather than a hot, smooth blackbody from shock interaction. Further work is needed to determine the ejecta and {sup 56}Ni masses of SNe 2011aa and 2012dn and to fully explain their high UV luminosities.

  20. GA SNC Solar | Open Energy Information

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    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  1. Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses Citation Details In-Document Search Title: Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in

  2. Type Ia supernova rate measurements to redshift 2.5 from CANDELS: Searching

    Office of Scientific and Technical Information (OSTI)

    for prompt explosions in the early universe (Journal Article) | SciTech Connect Type Ia supernova rate measurements to redshift 2.5 from CANDELS: Searching for prompt explosions in the early universe Citation Details In-Document Search Title: Type Ia supernova rate measurements to redshift 2.5 from CANDELS: Searching for prompt explosions in the early universe The Cosmic Assembly Near-infrared Deep Extragalactic Legacy Survey (CANDELS) was a multi-cycle treasury program on the Hubble Space

  3. Type Ia supernovae yielding distances with 3-4% precision (Journal Article)

    Office of Scientific and Technical Information (OSTI)

    | SciTech Connect Type Ia supernovae yielding distances with 3-4% precision Citation Details In-Document Search Title: Type Ia supernovae yielding distances with 3-4% precision × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and technology. A paper copy of this

  4. Strong near-infrared carbon in the Type Ia supernova iPTF13ebh

    SciTech Connect (OSTI)

    Hsiao, E. Y.; Burns, C. R.; Contreras, C.; Höflich, P.; Sand, D.; Marion, G. H.; Phillips, M. M.; Stritzinger, M.; González-Gaitán, S.; Mason, R. E.; Folatelli, G.; Parent, E.; Gall, C.; Amanullah, R.; Anupama, G. C.; Arcavi, I.; Banerjee, D. P. K.; Beletsky, Y.; Blanc, G. A.; Bloom, J. S.; Brown, P. J.; Campillay, A.; Cao, Y.; De Cia, A.; Diamond, T.; Freedman, W. L.; Gonzalez, C.; Goobar, A.; Holmbo, S.; Howell, D. A.; Johansson, J.; Kasliwal, M. M.; Kirshner, R. P.; Krisciunas, K.; Kulkarni, S. R.; Maguire, K.; Milne, P. A.; Morrell, N.; Nugent, P. E.; Ofek, E. O.; Osip, D.; Palunas, P.; Perley, D. A.; Persson, S. E.; Piro, A. L.; Rabus, M.; Roth, M.; Schiefelbein, J. M.; Srivastav, S.; Sullivan, M.; Suntzeff, N. B.; Surace, J.; Woźniak, P. R.; Yaron, O.

    2015-05-22

    We present near-infrared (NIR) time-series spectroscopy, as well as complementary ultraviolet (UV), optical, and NIR data, of the Type Ia supernova (SN Ia) iPTF13ebh, which was discovered within two days from the estimated time of explosion. The first NIR spectrum was taken merely 2.3 days after explosion and may be the earliest NIR spectrum yet obtained of a SN Ia. The most striking features in the spectrum are several NIR C I lines, and the C Iλ1.0693 μm line is the strongest ever observed in a SN Ia. Interestingly, no strong optical C II counterparts were found, even though the optical spectroscopic time series began early and is densely cadenced. Except at the very early epochs, within a few days from the time of explosion, we show that the strong NIR C I compared to the weaker optical C II appears to be general in SNe Ia. iPTF13ebh is a fast decliner with Δm15(B) = 1.79 ± 0.01, and its absolute magnitude obeys the linear part of the width-luminosity relation. It is therefore categorized as a “transitional” event, on the fast-declining end of normal SNe Ia as opposed to subluminous/91bg-like objects. iPTF13ebh shows NIR spectroscopic properties that are distinct from both the normal and subluminous/91bg-like classes, bridging the observed characteristics of the two classes. These NIR observations suggest that composition and density of the inner core are similar to that of 91bg-like events, and that it has a deep-reaching carbon burning layer that is not observed in more slowly declining SNe Ia. Furthermore, there is also a substantial difference between the explosion times inferred from the early-time light curve and the velocity evolution of the Si II λ0.6355 μm line, implying a long dark phase of ~4 days.

  5. Strong near-infrared carbon in the Type Ia supernova iPTF13ebh

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hsiao, E. Y.; Burns, C. R.; Contreras, C.; Höflich, P.; Sand, D.; Marion, G. H.; Phillips, M. M.; Stritzinger, M.; González-Gaitán, S.; Mason, R. E.; et al

    2015-05-22

    We present near-infrared (NIR) time-series spectroscopy, as well as complementary ultraviolet (UV), optical, and NIR data, of the Type Ia supernova (SN Ia) iPTF13ebh, which was discovered within two days from the estimated time of explosion. The first NIR spectrum was taken merely 2.3 days after explosion and may be the earliest NIR spectrum yet obtained of a SN Ia. The most striking features in the spectrum are several NIR C I lines, and the C Iλ1.0693 μm line is the strongest ever observed in a SN Ia. Interestingly, no strong optical C II counterparts were found, even though themore » optical spectroscopic time series began early and is densely cadenced. Except at the very early epochs, within a few days from the time of explosion, we show that the strong NIR C I compared to the weaker optical C II appears to be general in SNe Ia. iPTF13ebh is a fast decliner with Δm15(B) = 1.79 ± 0.01, and its absolute magnitude obeys the linear part of the width-luminosity relation. It is therefore categorized as a “transitional” event, on the fast-declining end of normal SNe Ia as opposed to subluminous/91bg-like objects. iPTF13ebh shows NIR spectroscopic properties that are distinct from both the normal and subluminous/91bg-like classes, bridging the observed characteristics of the two classes. These NIR observations suggest that composition and density of the inner core are similar to that of 91bg-like events, and that it has a deep-reaching carbon burning layer that is not observed in more slowly declining SNe Ia. Furthermore, there is also a substantial difference between the explosion times inferred from the early-time light curve and the velocity evolution of the Si II λ0.6355 μm line, implying a long dark phase of ~4 days.« less

  6. TYPE Ia SUPERNOVA COLORS AND EJECTA VELOCITIES: HIERARCHICAL BAYESIAN REGRESSION WITH NON-GAUSSIAN DISTRIBUTIONS

    SciTech Connect (OSTI)

    Mandel, Kaisey S.; Kirshner, Robert P. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Foley, Ryan J., E-mail: kmandel@cfa.harvard.edu [Astronomy Department, University of Illinois at Urbana-Champaign, 1002 West Green Street, Urbana, IL 61801 (United States)

    2014-12-20

    We investigate the statistical dependence of the peak intrinsic colors of Type Ia supernovae (SNe Ia) on their expansion velocities at maximum light, measured from the Si II ?6355 spectral feature. We construct a new hierarchical Bayesian regression model, accounting for the random effects of intrinsic scatter, measurement error, and reddening by host galaxy dust, and implement a Gibbs sampler and deviance information criteria to estimate the correlation. The method is applied to the apparent colors from BVRI light curves and Si II velocity data for 79 nearby SNe Ia. The apparent color distributions of high-velocity (HV) and normal velocity (NV) supernovae exhibit significant discrepancies for B V and B R, but not other colors. Hence, they are likely due to intrinsic color differences originating in the B band, rather than dust reddening. The mean intrinsic B V and B R color differences between HV and NV groups are 0.06 0.02 and 0.09 0.02 mag, respectively. A linear model finds significant slopes of 0.021 0.006 and 0.030 0.009 mag (10{sup 3} km s{sup 1}){sup 1} for intrinsic B V and B R colors versus velocity, respectively. Because the ejecta velocity distribution is skewed toward high velocities, these effects imply non-Gaussian intrinsic color distributions with skewness up to +0.3. Accounting for the intrinsic-color-velocity correlation results in corrections to A{sub V} extinction estimates as large as 0.12 mag for HV SNe Ia and +0.06 mag for NV events. Velocity measurements from SN Ia spectra have the potential to diminish systematic errors from the confounding of intrinsic colors and dust reddening affecting supernova distances.

  7. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  8. Type Ia supernova rate measurements to redshift 2.5 from CANDELS: Searching for prompt explosions in the early universe

    SciTech Connect (OSTI)

    Rodney, Steven A.; Riess, Adam G.; Graur, Or; Jones, David O. [Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, MD 21218 (United States); Strolger, Louis-Gregory; Dahlen, Tomas; Casertano, Stefano; Ferguson, Henry C.; Koekemoer, Anton M. [Space Telescope Science Institute, Baltimore, MD 21218 (United States); Dickinson, Mark E. [National Optical Astronomy Observatory, 950 North Cherry Avenue, Tucson, AZ 85719 (United States); Garnavich, Peter [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Hayden, Brian [E.O. Lawrence Berkeley National Lab, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Jha, Saurabh W.; McCully, Curtis; Patel, Brandon [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ 08854 (United States); Kirshner, Robert P. [Harvard-Smithsonian Center for Astrophysics, Cambridge, MA 02138 (United States); Mobasher, Bahram [Department of Physics and Astronomy, University of California, Riverside, CA 92521 (United States); Weiner, Benjamin J. [Department of Astronomy, University of Arizona, Tucson, AZ 85721 (United States); Cenko, S. Bradley [Astrophysics Science Division, NASA Goddard Space Flight Center, Mail Code 661, Greenbelt, MD 20771 (United States); Clubb, Kelsey I. [Department of Astronomy, University of California, Berkeley, CA 94720 (United States); and others

    2014-07-01

    The Cosmic Assembly Near-infrared Deep Extragalactic Legacy Survey (CANDELS) was a multi-cycle treasury program on the Hubble Space Telescope (HST) that surveyed a total area of ?0.25 deg{sup 2} with ?900 HST orbits spread across five fields over three years. Within these survey images we discovered 65 supernovae (SNe) of all types, out to z ? 2.5. We classify ?24 of these as Type Ia SNe (SNe Ia) based on host galaxy redshifts and SN photometry (supplemented by grism spectroscopy of six SNe). Here we present a measurement of the volumetric SN Ia rate as a function of redshift, reaching for the first time beyond z = 2 and putting new constraints on SN Ia progenitor models. Our highest redshift bin includes detections of SNe that exploded when the universe was only ?3 Gyr old and near the peak of the cosmic star formation history. This gives the CANDELS high redshift sample unique leverage for evaluating the fraction of SNe Ia that explode promptly after formation (<500 Myr). Combining the CANDELS rates with all available SN Ia rate measurements in the literature we find that this prompt SN Ia fraction is f{sub P} = 0.53{sub stat0.10}{sup 0.09}{sub sys0.26}{sup 0.10}, consistent with a delay time distribution that follows a simple t {sup 1} power law for all times t > 40 Myr. However, mild tension is apparent between ground-based low-z surveys and space-based high-z surveys. In both CANDELS and the sister HST program CLASH (Cluster Lensing And Supernova Survey with Hubble), we find a low rate of SNe Ia at z > 1. This could be a hint that prompt progenitors are in fact relatively rare, accounting for only 20% of all SN Ia explosionsthough further analysis and larger samples will be needed to examine that suggestion.

  9. Upcoming Funding Opportunity for Competitive Marine and Hydrokinetic (MHK)

    Energy Savers [EERE]

    Summit on July 9 in Atlanta, GA | Department of Energy Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit on July 9 in Atlanta, GA Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit on July 9 in Atlanta, GA June 25, 2015 - 8:19am Addthis On July 9, the U.S. Department of Energy will be holding the Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit at the Renaissance Atlanta Midtown Hotel in Atlanta, Georgia. The

  10. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  11. SNe Ia tests of quintessence tracker cosmology in an anisotropic background

    SciTech Connect (OSTI)

    Miranda, W.; Carneiro, S.; Pigozzo, C. E-mail: saulo.carneiro@pq.cnpq.br

    2014-07-01

    We investigate the observational effects of a quintessence model in an anisotropic spacetime. The anisotropic metric is a non-rotating particular case of a generalized Gdel's metric and is classified as Bianchi III. This metric is an exact solution of the Einstein-Klein-Gordon field equations with an anisotropic scalar field ?, which is responsible for the anisotropy of the spacetime geometry. We test the model against observations of type Ia supernovae, analyzing the SDSS dataset calibrated with the MLCS2k2 fitter, and the results are compared to standard quintessence models with Ratra-Peebles potentials. We obtain a good agreement with observations, with best values for the matter and curvature density parameters ?{sub M}=0.29 and ?{sub k}=0.01 respectively. We conclude that present SNe Ia observations cannot, alone, distinguish a possible anisotropic axis in the cosmos.

  12. Comparing the host galaxies of type Ia, type II, and type Ibc supernovae

    SciTech Connect (OSTI)

    Shao, X.; Liang, Y. C.; Chen, X. Y.; Zhong, G. H.; Deng, L. C.; Zhang, B.; Shi, W. B.; Zhou, L.; Dennefeld, M.; Hammer, F.; Flores, H. E-mail: ycliang@bao.ac.cn

    2014-08-10

    We compare the host galaxies of 902 supernovae (SNe), including SNe Ia, SNe II, and SNe Ibc, which are selected by cross-matching the Asiago Supernova Catalog with the Sloan Digital Sky Survey (SDSS) Data Release 7. We selected an additional 213 galaxies by requiring the light fraction of spectral observations to be >15%, which could represent well the global properties of the galaxies. Among these 213 galaxies, 135 appear on the Baldwin-Phillips-Terlevich diagram, which allows us to compare the hosts in terms of whether they are star-forming (SF) galaxies, active galactic nuclei (AGNs; including composites, LINERs, and Seyfert 2s) or absorption-line galaxies (Absorps; i.e., their related emission lines are weak or non-existent). The diagrams related to the parameters D{sub n}(4000), H?{sub A}, stellar masses, star formation rates (SFRs), and specific SFRs for the SNe hosts show that almost all SNe II and most of the SNe Ibc occur in SF galaxies, which have a wide range of stellar masses and low D{sub n}(4000). The SNe Ia hosts as SF galaxies following similar trends. A significant fraction of SNe Ia occurs in AGNs and absorption-line galaxies, which are massive and have high D{sub n}(4000). The stellar population analysis from spectral synthesis fitting shows that the hosts of SNe II have a younger stellar population than hosts of SNe Ia. These results are compared with those of the 689 comparison galaxies where the SDSS fiber captures less than 15% of the total light. These comparison galaxies appear biased toward higher 12+log(O/H) (?0.1 dex) at a given stellar mass. Therefore, we believe the aperture effect should be kept in mind when the properties of the hosts for different types of SNe are discussed.

  13. THE EARLIEST NEAR-INFRARED TIME-SERIES SPECTROSCOPY OF A TYPE Ia SUPERNOVA

    SciTech Connect (OSTI)

    Hsiao, E. Y.; Phillips, M. M.; Morrell, N.; Contreras, C.; Roth, M.; Marion, G. H.; Kirshner, R. P.; Burns, C. R.; Freedman, W. L.; Persson, S. E.; Winge, C.; Gerardy, C. L.; Hoeflich, P.; Im, M.; Jeon, Y.; Pignata, G.; Stanishev, V.; and others

    2013-04-01

    We present ten medium-resolution, high signal-to-noise ratio near-infrared (NIR) spectra of SN 2011fe from SpeX on the NASA Infrared Telescope Facility (IRTF) and Gemini Near-Infrared Spectrograph (GNIRS) on Gemini North, obtained as part of the Carnegie Supernova Project. This data set constitutes the earliest time-series NIR spectroscopy of a Type Ia supernova (SN Ia), with the first spectrum obtained at 2.58 days past the explosion and covering -14.6 to +17.3 days relative to B-band maximum. C I {lambda}1.0693 {mu}m is detected in SN 2011fe with increasing strength up to maximum light. The delay in the onset of the NIR C I line demonstrates its potential to be an effective tracer of unprocessed material. For the first time in a SN Ia, the early rapid decline of the Mg II {lambda}1.0927 {mu}m velocity was observed, and the subsequent velocity is remarkably constant. The Mg II velocity during this constant phase locates the inner edge of carbon burning and probes the conditions under which the transition from deflagration to detonation occurs. We show that the Mg II velocity does not correlate with the optical light-curve decline rate {Delta}m{sub 15}(B). The prominent break at {approx}1.5 {mu}m is the main source of concern for NIR k-correction calculations. We demonstrate here that the feature has a uniform time evolution among SNe Ia, with the flux ratio across the break strongly correlated with {Delta}m{sub 15}(B). The predictability of the strength and the onset of this feature suggests that the associated k-correction uncertainties can be minimized with improved spectral templates.

  14. General Atomics (GA) Fusion News: A New Spin on Understanding...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New ...

  15. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  16. Optical and ultraviolet observations of the narrow-lined type Ia SN 2012fr in NGC 1365

    SciTech Connect (OSTI)

    Zhang, Ju-Jia; Bai, Jin-Ming; Wang, Bo; Liu, Zheng-Wei [Yunnan Observatories (YNAO), Chinese Academy of Sciences, Kunming 650011 (China); Wang, Xiao-Feng; Zhao, Xu-Lin; Chen, Jun-Cheng [Physics Department and Tsinghua Center for Astrophysics (THCA), Tsinghua University, Beijing 100084 (China); Zhang, Tian-Meng, E-mail: jujia@ynao.ac.cn, E-mail: baijinming@ynao.ac.cn, E-mail: wang_xf@mail.tsinghua.edu.cn [National Astronomical Observatories of China (NAOC), Chinese Academy of Sciences, Beijing 100012 (China)

    2014-07-01

    Extensive optical and ultraviolet (UV) observations of the type Ia supernova (SN Ia) 2012fr are presented in this paper. It has a relatively high luminosity, with an absolute B-band peak magnitude of about 19.5 mag and a smaller post-maximum decline rate than normal SNe Ia (e.g., ?m {sub 15}(B) =0.85 0.05 mag). Based on the UV and optical light curves, we derived that a {sup 56}Ni mass of about 0.88 M {sub ?} was synthesized in the explosion. The earlier spectra are characterized by noticeable high-velocity features of Si II ?6355 and Ca II with velocities in the range of ?22, 000-25, 000 km s{sup 1}. At around the maximum light, these spectral features are dominated by the photospheric components which are noticeably narrower than normal SNe Ia. The post-maximum velocity of the photosphere remains almost constant at ?12,000 km s{sup 1} for about one month, reminiscent of the behavior of some luminous SNe Ia like SN 1991T. We propose that SN 2012fr may represent a subset of the SN 1991T-like SNe Ia viewed in a direction with a clumpy or shell-like structure of ejecta, in terms of a significant level of polarization reported in Maund et al. in 2013.

  17. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  18. Control Systems Security Standards: Accomplishments & Impacts

    Energy Savers [EERE]

    ... 14-15, 2007 Houston, TX Hill, Shamsuddin PCSF 2007 Annual Meeting March 6-8, 2007 Atlanta, GA Halbgewachs IEC TC 65WG 10 - Standard 62443 March 5 & 8-9, 2007 Atlanta, GA ...

  19. Airports & Lodging | Savannah River Ecology Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Columbia, SC Columbia Metropolitan Airport - all major carriers; 1.5-2h drive to SREL. Atlanta, GA Hartsfield Airport - all major carriers; 2.5-3 hour drive from Atlanta, GA, to ...

  20. A SUPER-EDDINGTON WIND SCENARIO FOR THE PROGENITORS OF TYPE Ia SUPERNOVAE

    SciTech Connect (OSTI)

    Ma, Xin; Chen, Xuefei; Chen, Hai-liang; Han, Zhanwen; Denissenkov, Pavel A. E-mail: cxf@ynao.ac.cn

    2013-12-01

    The accretion of hydrogen-rich material on to carbon-oxygen white dwarfs (CO WDs) is crucial for understanding Type Ia supernova (SN Ia) from the single-degenerate model, but this process has not been well understood due to the numerical difficulties in treating H and He flashes during the accretion. For CO WD masses from 0.5 to 1.378 M {sub ?} and accretion rates in the range from 10{sup 8} to 10{sup 5} M {sub ?} yr{sup 1}, we simulated the accretion of solar-composition material on to CO WDs using the state-of-the-art stellar evolution code of MESA. For comparison with steady-state models, we first ignored the contribution from nuclear burning to the luminosity when determining the Eddington accretion rate, and found that the properties of H burning in our accreting CO WD models are similar to those from the steady-state models, except that the critical accretion rates at which the WDs turn into red giants or H-shell flashes occur on their surfaces are slightly higher than those from the steady-state models. However, the super-Eddington wind is triggered at much lower accretion rates than previously thought, when the contribution of nuclear burning to the total luminosity is included. This super-Eddington wind naturally prevents the CO WDs with high accretion rates from becoming red giants, thus presenting an alternative to the optically thick wind proposed by Hachisu etal. Furthermore, the super-Eddington wind works in low-metallicity environments, which may explain SNe Ia observed at high redshifts.

  1. SPECTROPOLARIMETRY OF THE TYPE Ia SN 2007sr TWO MONTHS AFTER MAXIMUM LIGHT

    SciTech Connect (OSTI)

    Zelaya, P.; Quinn, J. R.; Clocchiatti, A.; Baade, D.; Patat, F.; Hoeflich, P.; Maund, J.; Wang, L.; Wheeler, J. C.

    2013-02-01

    We present late-time spectropolarimetric observations of SN 2007sr, obtained with the Very Large Telescope at the ESO Paranal Observatory when the object was 63 days after maximum light. The late-time spectrum displays strong line polarization in the Ca II absorption features. SN 2007sr adds to the case of some normal Type Ia supernovae that show high line polarization or repolarization at late times, a fact that might be connected with the presence of high-velocity features at early times.

  2. IA REP0 SAND85-2809 Unlimited Release UC-92A

    Office of Scientific and Technical Information (OSTI)

    IA REP0 SAND85-2809 Unlimited Release UC-92A Printed July 1986 High Energy Gas Fracture Experiments in Fluid-Filled Boreholes-Potential Geothermal Application J. F. Cuderman, T. Y. Chu, J. Jung, R. D. Jacobson Prepared by Sandia National Laboratories Albuquerque, New Mexico 87 185 and Livermore, California 94550 for the United States Department of Energy under Contract DE-AC04-76DP00789 DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States

  3. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  4. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  5. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  6. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  7. Consistent use of type Ia supernovae highly magnified by galaxy clusters to constrain the cosmological parameters

    SciTech Connect (OSTI)

    Zitrin, Adi [Cahill Center for Astronomy and Astrophysics, California Institute of Technology, MS 249-17, Pasadena, CA 91125 (United States); Redlich, Matthias [Universitt Heidelberg, Zentrum fr Astronomie, Institut fr Theoretische Astrophysik, Philosophenweg 12, D-69120 Heidelberg (Germany); Broadhurst, Tom, E-mail: adizitrin@gmail.com [Department of Theoretical Physics, University of Basque Country UPV/EHU, Bilbao (Spain)

    2014-07-01

    We discuss how Type Ia supernovae (SNe) strongly magnified by foreground galaxy clusters should be self-consistently treated when used in samples fitted for the cosmological parameters. While the cluster lens magnification of a SN can be well constrained from sets of multiple images of various background galaxies with measured redshifts, its value is typically dependent on the fiducial set of cosmological parameters used to construct the mass model. In such cases, one should not naively demagnify the observed SN luminosity by the model magnification into the expected Hubble diagram, which would create a bias, but instead take into account the cosmological parameters a priori chosen to construct the mass model. We quantify the effect and find that a systematic error of typically a few percent, up to a few dozen percent per magnified SN may be propagated onto a cosmological parameter fit unless the cosmology assumed for the mass model is taken into account (the bias can be even larger if the SN is lying very near the critical curves). We also simulate how such a bias propagates onto the cosmological parameter fit using the Union2.1 sample supplemented with strongly magnified SNe. The resulting bias on the deduced cosmological parameters is generally at the few percent level, if only few biased SNe are included, and increases with the number of lensed SNe and their redshift. Samples containing magnified Type Ia SNe, e.g., from ongoing cluster surveys, should readily account for this possible bias.

  8. TYCHO SN 1572: A NAKED Ia SUPERNOVA REMNANT WITHOUT AN ASSOCIATED AMBIENT MOLECULAR CLOUD

    SciTech Connect (OSTI)

    Tian, W. W.; Leahy, D. A.

    2011-03-10

    The historical supernova remnant (SNR) Tycho SN 1572 originates from the explosion of a normal Type Ia supernova that is believed to have originated from a carbon-oxygen white dwarf in a binary system. We analyze the 21 cm continuum, H I, and {sup 12}CO-line data from the Canadian Galactic Plane Survey in the direction of SN 1572 and the surrounding region. We construct H I absorption spectra to SN 1572 and three nearby compact sources. We conclude that SN 1572 has no molecular cloud interaction, which argues against previous claims that a molecular cloud is interacting with the SNR. This new result does not support a recent claim that dust, newly detected by AKARI, originates from such an SNR-cloud interaction. We suggest that the SNR has a kinematic distance of 2.5-3.0 kpc based on a nonlinear rotational curve model. Very high energy {gamma}-ray emission from the remnant has been detected by the VERITAS telescope, so our result shows that its origin should not be an SNR-cloud interaction. Both radio and X-ray observations support that SN 1572 is an isolated Type Ia SNR.

  9. Spectroscopic Determination of the Low Redshift Type Ia Supernova Rate from the Sloan Digital Sky Survey

    SciTech Connect (OSTI)

    Krughoff, K. S.; Connolly, Andrew J.; Frieman, Joshua; SubbaRao, Mark; Kilper, Gary; Schneider, Donald P.

    2011-04-10

    Supernova rates are directly coupled to high mass stellar birth and evolution. As such, they are one of the few direct measures of the history of cosmic stellar evolution. In this paper we describe an probabilistic technique for identifying supernovae within spectroscopic samples of galaxies. We present a study of 52 type Ia supernovae ranging in age from -14 days to +40 days extracted from a parent sample of \\simeq 50,000 spectra from the SDSS DR5. We find a Supernova Rate (SNR) of 0.472^{+0.048}_{-0.039}(Systematic)^{+0.081}_{-0.071}(Statistical)SNu at a redshift of = 0.1. This value is higher than other values at low redshift at the 1{\\sigma}, but is consistent at the 3{\\sigma} level. The 52 supernova candidates used in this study comprise the third largest sample of supernovae used in a type Ia rate determination to date. In this paper we demonstrate the potential for the described approach for detecting supernovae in future spectroscopic surveys.

  10. US SoAtl GA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per

  11. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  12. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  13. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: Biedermann, Laura Butler ; Kaplar, Robert James ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2012-10-01 OSTI Identifier: 1111316 Report Number(s):

  14. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Conference: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: DasGupta, Sandeepan ; Biedermann, Laura Butler ; Kaplar, Robert ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2013-02-01 OSTI Identifier:

  15. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  16. LAX XXlCfl jX?iK, Idd+?KYLViG?IA

    Office of Legacy Management (LM)

    f , : I~&l, samtier cipwati8Aa CffUm - . Jiux.lCJ d,# 1754 - - _- - .- t :; . Jesse e. ahizmn*~*ter -2.' -------- - _ &tV' hi@A l f izau Bkteriala ;' . . 1 -7 I _' i' . Fpr&G& r&Q Q,&& fu &fI& L;&& -l&d 2;,i' iI,;/Qi' rIGN CQ&GgJy p;E& p;~p>gyf LAX XXlCfl jX?iK, Idd+?KYLViG?IA i-icfer~~o is &o ta yaw rwarandu3;: l P iimwmbec L?, 1953, reque&in~ a d&q.&ti of khority tA A&sister prog= for th+zz developmrrrl,

  17. Near-infrared line identification in type Ia supernovae during the transitional phase

    SciTech Connect (OSTI)

    Friesen, Brian; Baron, E.; Wisniewski, John P.; Miller, Timothy R.; Parrent, Jerod T.; Thomas, R. C.; Marion, G. H.

    2014-09-10

    We present near-infrared synthetic spectra of a delayed-detonation hydrodynamical model and compare them to observed spectra of four normal Type Ia supernovae ranging from day +56.5 to day +85. This is the epoch during which supernovae are believed to be undergoing the transition from the photospheric phase, where spectra are characterized by line scattering above an optically thick photosphere, to the nebular phase, where spectra consist of optically thin emission from forbidden lines. We find that most spectral features in the near-infrared can be accounted for by permitted lines of Fe II and Co II. In addition, we find that [Ni II] fits the emission feature near 1.98 μm, suggesting that a substantial mass of {sup 58}Ni exists near the center of the ejecta in these objects, arising from nuclear burning at high density.

  18. EARLY OBSERVATIONS AND ANALYSIS OF THE TYPE Ia SN 2014J IN M82

    SciTech Connect (OSTI)

    Marion, G. H.; Vink, J. [University of Texas at Austin, 1 University Station C1400, Austin, TX 78712-0259 (United States); Sand, D. J. [Physics Department, Texas Tech University, Lubbock, TX 79409 (United States); Hsiao, E. Y. [Carnegie Observatories, Las Campanas Observatory, Colina El Pino, Casilla 601 (Chile); Banerjee, D. P. K.; Joshi, V.; Venkataraman, V.; Ashok, N. M. [Astronomy and Astrophysics Division, Physical Research Laboratory, Navrangapura, Ahmedabad - 380009, Gujarat (India); Valenti, S.; Howell, D. A. [Las Cumbres Observatory Global Telescope Network, 6740 Cortona Drive, Suite 102, Santa Barbara, CA 93117 (United States); Stritzinger, M. D. [Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C (Denmark); Amanullah, R.; Johansson, J. [The Oskar Klein Centre, Physics Department, Stockholm University, Albanova University Center, SE 106 91 Stockholm (Sweden); Binzel, R. P. [Department of Earth, Atmospheric, and Planetary Sciences, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Bochanski, J. J. [Haverford College, 370 Lancaster Avenue, Haverford, PA 19041 (United States); Bryngelson, G. L. [Department of Physics and Astronomy, Francis Marion University, 4822 East Palmetto Street, Florence, SC 29506 (United States); Burns, C. R. [Observatories of the Carnegie Institution for Science, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); Drozdov, D. [Department of Physics and Astronomy, Clemson University, 8304 University Station, Clemson, SC 29634 (United States); Fieber-Beyer, S. K. [Department of Space Studies, University of North Dakota, University Stop 9008, ND 58202 (United States); Graham, M. L., E-mail: hman@astro.as.utexas.edu [Astronomy Department, University of California at Berkeley, Berkeley, CA 94720 (United States); and others

    2015-01-01

    We present optical and near infrared (NIR) observations of the nearby Type Ia SN 2014J. Seventeen optical and 23 NIR spectra were obtained from 10days before (10d) to 10days after (+10d) the time of maximum B-band brightness. The relative strengths of absorption features and their patterns of development can be compared at one day intervals throughout most of this period. Carbon is not detected in the optical spectra, but we identify C I?1.0693 in the NIR spectra. Mg II lines with high oscillator strengths have higher initial velocities than other Mg II lines. We show that the velocity differences can be explained by differences in optical depths due to oscillator strengths. The spectra of SN 2014J show that it is a normal SN Ia, but many parameters are near the boundaries between normal and high-velocity subclasses. The velocities for O I, Mg II, Si II, S II, Ca II, and Fe II suggest that SN 2014J has a layered structure with little or no mixing. That result is consistent with the delayed detonation explosion models. We also report photometric observations, obtained from 10d to +29d, in the UBVRIJH and K{sub s} bands. The template fitting package SNooPy is used to interpret the light curves and to derive photometric parameters. Using R{sub V} = 1.46, which is consistent with previous studies, SNooPy finds that A{sub V} = 1.80 for E(B V){sub host} = 1.23 0.06 mag. The maximum B-band brightness of 19.19 0.10 mag was reached on February 1.74 UT 0.13days and the supernova has a decline parameter, ?m {sub 15}, of 1.12 0.02 mag.

  19. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  20. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  1. EVOLUTION OF POST-IMPACT REMNANT HELIUM STARS IN TYPE Ia SUPERNOVA REMNANTS WITHIN THE SINGLE-DEGENERATE SCENARIO

    SciTech Connect (OSTI)

    Pan, Kuo-Chuan; Ricker, Paul M.; Taam, Ronald E. E-mail: pmricker@illinois.edu

    2013-08-10

    The progenitor systems of Type Ia supernovae (SNe Ia) are still under debate. Based on recent hydrodynamics simulations, non-degenerate companions in the single-degenerate scenario (SDS) should survive the supernova (SN) impact. One way to distinguish between the SDS and the double-degenerate scenario is to search for the post-impact remnant stars (PIRSs) in SN Ia remnants. Using a technique that combines multi-dimensional hydrodynamics simulations with one-dimensional stellar evolution simulations, we have examined the post-impact evolution of helium-rich binary companions in the SDS. It is found that these helium-rich PIRSs (He PIRSs) dramatically expand and evolve to a luminous phase (L {approx} 10{sup 4} L{sub Sun }) about 10 yr after an SN explosion. Subsequently, they contract and evolve to become hot blue-subdwarf-like (sdO-like) stars by releasing gravitational energy, persisting as sdO-like stars for several million years before evolving to the helium red-giant phase. We therefore predict that a luminous OB-like star should be detectable within {approx}30 yr after the SN explosion. Thereafter, it will shrink and become an sdO-like star in the central regions of SN Ia remnants within star-forming regions for SN Ia progenitors evolved via the helium-star channel in the SDS. These He PIRSs are predicted to be rapidly rotating (v{sub rot} {approx}> 50 km s{sup -1}) and to have high spatial velocities (v{sub linear} {approx}> 500 km s{sup -1}). Furthermore, if SN remnants have diffused away and are not recognizable at a later stage, He PIRSs could be an additional source of single sdO stars and/or hypervelocity stars.

  2. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  3. Measurements of the Rate of Type Ia Supernovae at Redshift z < ~0.3 from the SDSS-II Supernova Survey

    SciTech Connect (OSTI)

    Dilday, Benjamin; Smith, Mathew; Bassett, Bruce; Becker, Andrew; Bender, Ralf; Castander, Francisco; Cinabro, David; Filippenko, Alexei V.; Frieman, Joshua A.; Galbany, Lluis; Garnavich, Peter M.; /Notre Dame U. /Stockholm U., OKC /Stockholm U.

    2010-01-01

    We present a measurement of the volumetric Type Ia supernova (SN Ia) rate based on data from the Sloan Digital Sky Survey II (SDSS-II) Supernova Survey. The adopted sample of supernovae (SNe) includes 516 SNe Ia at redshift z {approx}< 0.3, of which 270 (52%) are spectroscopically identified as SNe Ia. The remaining 246 SNe Ia were identified through their light curves; 113 of these objects have spectroscopic redshifts from spectra of their host galaxy, and 133 have photometric redshifts estimated from the SN light curves. Based on consideration of 87 spectroscopically confirmed non-Ia SNe discovered by the SDSS-II SN Survey, we estimate that 2.04{sub -0.95}{sup +1.61}% of the photometric SNe Ia may be misidentified. The sample of SNe Ia used in this measurement represents an order of magnitude increase in the statistics for SN Ia rate measurements in the redshift range covered by the SDSS-II Supernova Survey. If we assume a SN Ia rate that is constant at low redshift (z < 0.15), then the SN observations can be used to infer a value of the SN rate of r{sub V} = (2.69{sub -0.30-0.01}{sup +0.34+0.21}) x 10{sup -5} SNe yr{sup -1} Mpc{sup -3} (H{sub 0}/(70 km s{sup -1} Mpc{sup -1})){sup 3} at a mean redshift of {approx} 0.12, based on 79 SNe Ia of which 72 are spectroscopically confirmed. However, the large sample of SNe Ia included in this study allows us to place constraints on the redshift dependence of the SN Ia rate based on the SDSS-II Supernova Survey data alone. Fitting a power-law model of the SN rate evolution, r{sub V} (z) = A{sub p} x ((1+z)/(1+z{sub 0})){sup {nu}}, over the redshift range 0.0 < z < 0.3 with z{sub 0} = 0.21, results in A{sub p} = (3.43{sub -0.15}{sup +0.15}) x 10{sup -5} SNe yr{sup -1} Mpc{sup -3} (H{sub 0}/(70 km s{sup -1} Mpc{sup -1})){sup 3} and {nu} = 2.04{sub -0.89}{sup +0.90}.

  4. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA February 8, 2012 EIS-0476: Final Environmental Impact ...

  5. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  6. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  7. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  8. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  9. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  10. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  11. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  12. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  13. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PDF icon 2015 BTO Peer Review Presentation - Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture More Documents & ...

  14. A Measurement of the Rate of Type Ia Supernovae in Galaxy Clusters from the SDSS-II Supernova Survey

    SciTech Connect (OSTI)

    Dilday, Benjamin; Bassett, Bruce; Becker, Andrew; Bender, Ralf; Castander, Francisco; Cinabro, David; Frieman, Joshua A.; Galbany, Lluis; Garnavich, Peter; Goobar, Ariel; Hopp, Ulrich; /Munich, Tech. U. /Munich U. Observ. /Tokyo U.

    2010-03-01

    We present measurements of the Type Ia supernova (SN) rate in galaxy clusters based on data from the Sloan Digital Sky Survey-II (SDSS-II) Supernova Survey. The cluster SN Ia rate is determined from 9 SN events in a set of 71 C4 clusters at z {le} 0.17 and 27 SN events in 492 maxBCG clusters at 0.1 {le} z {le} 0.3. We find values for the cluster SN Ia rate of (0.37{sub -0.12-0.01}{sup +0.17+0.01}) SNur h{sup 2} and (0.55{sub -0.11-0.01}{sup +0.13+0.02}) SNur h{sup 2} (SNux = 10{sup -12}L{sub x{circle_dot}}{sup -1} yr{sup -1}) in C4 and maxBCG clusters, respectively, where the quoted errors are statistical and systematic, respectively. The SN rate for early-type galaxies is found to be (0.31{sub -0.12-0.01}{sup +0.18+0.01}) SNur h{sup 2} and (0.49{sub -0.11-0.01}{sup +0.15+0.02}) SNur h{sup 2} in C4 and maxBCG clusters, respectively. The SN rate for the brightest cluster galaxies (BCG) is found to be (2.04{sub -1.11-0.04}{sup +1.99+0.07}) SNur h{sup 2} and (0.36{sub -0.30-0.01}{sup +0.84+0.01}) SNur h{sup 2} in C4 and maxBCG clusters, respectively. The ratio of the SN Ia rate in cluster early-type galaxies to that of the SN Ia rate in field early-type galaxies is 1.94{sub -0.91-0.015}{sup +1.31+0.043} and 3.02{sub -1.03-0.048}{sup +1.31+0.062}, for C4 and maxBCG clusters, respectively. The SN rate in galaxy clusters as a function of redshift, which probes the late time SN Ia delay distribution, shows only weak dependence on redshift. Combining our current measurements with previous measurements, we fit the cluster SN Ia rate data to a linear function of redshift, and find r{sub L} = [(0.49{sub -0.14}{sup +0.15}) + (0.91{sub -0.81}{sup +0.85}) x z] SNuB h{sup 2}. A comparison of the radial distribution of SNe in cluster to field early-type galaxies shows possible evidence for an enhancement of the SN rate in the cores of cluster early-type galaxies. With an observation of at most 3 hostless, intra-cluster SNe Ia, we estimate the fraction of cluster SNe that are hostless to be (9.4{sub -5.1}{sup +8.3})%.

  15. FIRST EVIDENCE OF GLOBULAR CLUSTER FORMATION FROM THE EJECTA OF PROMPT TYPE Ia SUPERNOVAE

    SciTech Connect (OSTI)

    Tsujimoto, Takuji [National Astronomical Observatory of Japan, Mitaka-shi, Tokyo 181-8588 (Japan); Bekki, Kenji, E-mail: taku.tsujimoto@nao.ac.jp [ICRAR, M468, The University of Western Australia, 35 Stirling Highway, Crawley, WA 6009 (Australia)

    2012-06-01

    Recent spectroscopic observations of globular clusters (GCs) in the Large Magellanic Cloud (LMC) have discovered that one of the intermediate-age GCs, NGC 1718, with [Fe/H] = -0.7 has an extremely low [Mg/Fe] ratio of {approx}-0.9. We propose that NGC 1718 was formed from the ejecta of Type Ia supernovae mixed with very metal-poor ([Fe/H] <-1.3) gas about {approx}2 Gyr ago. The proposed scenario is shown to be consistent with the observed abundances of Fe-group elements such as Cr, Mn, and Ni. In addition, compelling evidence for asymptotic giant branch stars playing a role in chemical enrichment during this GC formation is found. We suggest that the origin of the metal-poor gas is closely associated with efficient gas transfer from the outer gas disk of the Small Magellanic Cloud to the LMC disk. We anticipate that the outer part of the LMC disk contains field stars exhibiting significantly low [Mg/Fe] ratios, formed through the same process as NGC 1718.

  16. PRODUCTION OF THE p-PROCESS NUCLEI IN THE CARBON-DEFLAGRATION MODEL FOR TYPE Ia SUPERNOVAE

    SciTech Connect (OSTI)

    Kusakabe, Motohiko; Iwamoto, Nobuyuki; Nomoto, Ken'ichi E-mail: iwamoto.nobuyuki@jaea.go.jp

    2011-01-01

    We calculate the nucleosynthesis of proton-rich isotopes in the carbon-deflagration model for Type Ia supernovae (SNe Ia). The seed abundances are obtained by calculating the s-process nucleosynthesis that is expected to occur in the repeating helium shell flashes on the carbon-oxygen (CO) white dwarf (WD) during mass accretion from a binary companion. When the deflagration wave passes through the outer layer of the CO WD, p-nuclei are produced by photodisintegration reactions on s-nuclei in a region where the peak temperature ranges from 1.9 to 3.6 x 10{sup 9} K. We confirm the sensitivity of the p-process on the initial distribution of s-nuclei. We show that the initial C/O ratio in the WD does not affect much the yield of p-nuclei. On the other hand, the abundance of {sup 22}Ne left after s-processing has a large influence on the p-process via the {sup 22}Ne({alpha},n) reaction. We find that about 50% of p-nuclides are co-produced when normalized to their solar abundances in all adopted cases of seed distribution. Mo and Ru, which are largely underproduced in Type II supernovae (SNe II), are produced more than in SNe II although they are underproduced with respect to the yield levels of other p-nuclides. The ratios between p-nuclei and iron in the ejecta are larger than the solar ratios by a factor of 1.2. We also compare the yields of oxygen, iron, and p-nuclides in SNe Ia and SNe II and suggest that SNe Ia could make a larger contribution than SNe II to the solar system content of p-nuclei.

  17. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  18. Metabolomic profiling of the nectars of Aquilegia pubescens and <i>A. Canadensis

    SciTech Connect (OSTI)

    Noutsos, Christos; Perera, Ann M.; Nikolau, Basil J.; Seaver, Samuel M. D.; Ware, Doreen H.; Motta, Andrea

    2015-05-01

    To date, variation in nectar chemistry of flowering plants has not been studied in detail. Such variation exerts considerable influence on pollinator–plant interactions, as well as on flower traits that play important roles in the selection of a plant for visitation by specific pollinators. Over the past 60 years the Aquilegia genus has been used as a key model for speciation studies. In this study, we defined the metabolomic profiles of flower samples of two Aquilegia species, <i>A. Canadensis and <i>A. pubescens. We identified a total of 75 metabolites that were classified into six main categories: organic acids, fatty acids, amino acids, esters, sugars, and unknowns. The mean abundances of 25 of these metabolites were significantly different between the two species, providing insights into interspecies variation in floral chemistry. Using the PlantSEED biochemistry database, we found that the majority of these metabolites are involved in biosynthetic pathways. Finally, we explored the annotated genome of <i>A. coerulea, using the PlantSEED pipeline and reconstructed the metabolic network of Aquilegia. This network, which contains the metabolic pathways involved in generating the observed chemical variation, is now publicly available from the DOE Systems Biology Knowledge Base (KBase; http://kbase.us).

  19. Constraints on the progenitor system of the type Ia supernova 2014J from pre-explosion Hubble space telescope imaging

    SciTech Connect (OSTI)

    Kelly, Patrick L.; Fox, Ori D.; Filippenko, Alexei V.; Shen, Ken J.; Zheng, WeiKang; Graham, Melissa L.; Tucker, Brad E.; Cenko, S. Bradley; Schaefer, Gail

    2014-07-20

    We constrain the properties of the progenitor system of the highly reddened Type Ia supernova (SN Ia) 2014J in Messier 82 (M82; d ? 3.5 Mpc). We determine the supernova (SN) location using Keck-II K-band adaptive optics images, and we find no evidence for flux from a progenitor system in pre-explosion near-ultraviolet through near-infrared Hubble Space Telescope (HST) images. Our upper limits exclude systems having a bright red giant companion, including symbiotic novae with luminosities comparable to that of RS Ophiuchi. While the flux constraints are also inconsistent with predictions for comparatively cool He-donor systems (T ? 35,000 K), we cannot preclude a system similar to V445 Puppis. The progenitor constraints are robust across a wide range of R{sub V} and A{sub V} values, but significantly greater values than those inferred from the SN light curve and spectrum would yield proportionally brighter luminosity limits. The comparatively faint flux expected from a binary progenitor system consisting of white dwarf stars would not have been detected in the pre-explosion HST imaging. Infrared HST exposures yield more stringent constraints on the luminosities of very cool (T < 3000 K) companion stars than was possible in the case of SN Ia 2011fe.

  20. Spectroscopic Properties of Star-Forming Host Galaxies and Type Ia Supernova Hubble Residuals in a Nearly Unbiased Sample

    SciTech Connect (OSTI)

    D'Andrea, Chris B.; et al.

    2011-12-20

    We examine the correlation between supernova host galaxy properties and their residuals on the Hubble diagram. We use supernovae discovered during the Sloan Digital Sky Survey II - Supernova Survey, and focus on objects at a redshift of z < 0.15, where the selection effects of the survey are known to yield a complete Type Ia supernova sample. To minimize the bias in our analysis with respect to measured host-galaxy properties, spectra were obtained for nearly all hosts, spanning a range in magnitude of -23 < M_r < -17. In contrast to previous works that use photometric estimates of host mass as a proxy for global metallicity, we analyze host-galaxy spectra to obtain gas-phase metallicities and star-formation rates from host galaxies with active star formation. From a final sample of ~ 40 emission-line galaxies, we find that light-curve corrected Type Ia supernovae are ~ 0.1 magnitudes brighter in high-metallicity hosts than in low-metallicity hosts. We also find a significant (> 3{\\sigma}) correlation between the Hubble residuals of Type Ia supernovae and the specific star-formation rate of the host galaxy. We comment on the importance of supernova/host-galaxy correlations as a source of systematic bias in future deep supernova surveys.

  1. A POSSIBLE EVOLUTIONARY SCENARIO OF HIGHLY MAGNETIZED SUPER-CHANDRASEKHAR WHITE DWARFS: PROGENITORS OF PECULIAR TYPE Ia SUPERNOVAE

    SciTech Connect (OSTI)

    Das, Upasana; Mukhopadhyay, Banibrata; Rao, A. R. E-mail: bm@physics.iisc.ernet.in

    2013-04-10

    Several recently discovered peculiar Type Ia supernovae seem to demand an altogether new formation theory that might help explain the puzzling dissimilarities between them and the standard Type Ia supernovae. The most striking aspect of the observational analysis is the necessity of invoking super-Chandrasekhar white dwarfs having masses {approx}2.1-2.8 M{sub Sun }, M{sub Sun} being the mass of Sun, as their most probable progenitors. Strongly magnetized white dwarfs having super-Chandrasekhar masses have already been established as potential candidates for the progenitors of peculiar Type Ia supernovae. Owing to the Landau quantization of the underlying electron degenerate gas, theoretical results yielded the observationally inferred mass range. Here, we sketch a possible evolutionary scenario by which super-Chandrasekhar white dwarfs could be formed by accretion on to a commonly observed magnetized white dwarf, invoking the phenomenon of flux freezing. This opens multiple possible evolution scenarios ending in supernova explosions of super-Chandrasekhar white dwarfs having masses within the range stated above. We point out that our proposal has observational support, such as the recent discovery of a large number of magnetized white dwarfs by the Sloan Digital Sky Survey.

  2. Radiogenic p-isotopes from type Ia supernova, nuclear physics uncertainties, and galactic chemical evolution compared with values in primitive meteorites

    SciTech Connect (OSTI)

    Travaglio, C.; Gallino, R.; Rauscher, T.; Dauphas, N.; Rpke, F. K.; Hillebrandt, W. E-mail: claudia.travaglio@b2fh.org

    2014-11-10

    The nucleosynthesis of proton-rich isotopes is calculated for multi-dimensional Chandrasekhar-mass models of Type Ia supernovae (SNe Ia) with different metallicities. The predicted abundances of the short-lived radioactive isotopes {sup 92}Nb, {sup 97,} {sup 98}Tc, and {sup 146}Sm are given in this framework. The abundance seeds are obtained by calculating s-process nucleosynthesis in the material accreted onto a carbon-oxygen white dwarf from a binary companion. A fine grid of s-seeds at different metallicities and {sup 13}C-pocket efficiencies is considered. A galactic chemical evolution model is used to predict the contribution of SN Ia to the solar system p-nuclei composition measured in meteorites. Nuclear physics uncertainties are critical to determine the role of SNe Ia in the production of {sup 92}Nb and {sup 146}Sm. We find that, if standard Chandrasekhar-mass SNe Ia are at least 50% of all SN Ia, they are strong candidates for reproducing the radiogenic p-process signature observed in meteorites.

  3. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  4. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  5. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  6. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  7. Persistent C II absorption in the normal type Ia supernova 2002fk

    SciTech Connect (OSTI)

    Cartier, Rgis; Zelaya, Paula [Millennium Institute of Astrophysics, Casilla 36-D, Santiago (Chile); Hamuy, Mario; Maza, Jos; Gonzlez, Luis; Huerta, Leonor [Departamento de Astronoma, Universidad de Chile, Casilla 36-D, Santiago (Chile); Pignata, Giuliano [Departamento Ciencias Fisicas, Universidad Andres Bello, Av. Repblica 252, Santiago (Chile); Frster, Francisco [Center for Mathematical Modelling, Universidad de Chile, Avenida Blanco Encalada 2120, Piso 7, Santiago (Chile); Folatelli, Gaston [Institute for the Physics and Mathematics of the Universe (IPMU), University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Phillips, Mark M.; Morrell, Nidia; Contreras, Carlos; Roth, Miguel; Gonzlez, Sergio [Carnegie Institution of Washington, Las Campanas Observatory, Colina el Pino s/n, Casilla 601 (Chile); Krisciunas, Kevin; Suntzeff, Nicholas B. [Department of Physics and Astronomy, Texas A and M University, 4242 TAMU, College Station, TX 77843 (United States); Clocchiatti, Alejandro [Departamento de Astronoma y Astrofsica, Pontificia Universidad Catlica de Chile, Casilla 306, Santiago (Chile); Coppi, Paolo [Department of Astronomy, Yale University, New Haven, CT 06520-8101 (United States); Koviak, Kathleen, E-mail: rcartier@das.uchile.cl [Carnegie Institution of Washington, 813 Santa Barbara Street, Pasadena, CA 911901 (United States)

    2014-07-01

    We present well-sampled UBVRIJHK photometry of SN 2002fk starting 12 days before maximum light through 122 days after peak brightness, along with a series of 15 optical spectra from 4 to +95 days since maximum. Our observations show the presence of C II lines in the early-time spectra of SN 2002fk, expanding at 11,000 km s{sup 1} and persisting until 8 days past maximum light with a velocity of ?9000 km s{sup 1}. SN 2002fk is characterized by a small velocity gradient of v-dot {sub Si} {sub II}=26 km s{sup 1} day{sup 1}, possibly caused by an off-center explosion with the ignition region oriented toward the observer. The connection between the viewing angle of an off-center explosion and the presence of C II in the early-time spectrum suggests that the observation of C II could be also due to a viewing angle effect. Adopting the Cepheid distance to NGC 1309 we provide the first H {sub 0} value based on near-infrared (near-IR) measurements of a Type Ia supernova (SN) between 63.0 0.8 (3.4 systematic) and 66.7 1.0 (3.5 systematic) km s{sup 1} Mpc{sup 1}, depending on the absolute magnitude/decline rate relationship adopted. It appears that the near-IR yields somewhat lower (6%-9%) H {sub 0} values than the optical. It is essential to further examine this issue by (1) expanding the sample of high-quality near-IR light curves of SNe in the Hubble flow, and (2) increasing the number of nearby SNe with near-IR SN light curves and precise Cepheid distances, which affords the promise to deliver a more precise determination of H {sub 0}.

  8. THE DETONATION MECHANISM OF THE PULSATIONALLY ASSISTED GRAVITATIONALLY CONFINED DETONATION MODEL OF Type Ia SUPERNOVAE

    SciTech Connect (OSTI)

    Jordan, G. C. IV; Graziani, C.; Weide, K.; Norris, J.; Hudson, R.; Lamb, D. Q.; Fisher, R. T.; Townsley, D. M.; Meakin, C.; Reid, L. B.

    2012-11-01

    We describe the detonation mechanism composing the 'pulsationally assisted' gravitationally confined detonation (GCD) model of Type Ia supernovae. This model is analogous to the previous GCD model reported in Jordan et al.; however, the chosen initial conditions produce a substantively different detonation mechanism, resulting from a larger energy release during the deflagration phase. The resulting final kinetic energy and {sup 56}Ni yields conform better to observational values than is the case for the 'classical' GCD models. In the present class of models, the ignition of a deflagration phase leads to a rising, burning plume of ash. The ash breaks out of the surface of the white dwarf, flows laterally around the star, and converges on the collision region at the antipodal point from where it broke out. The amount of energy released during the deflagration phase is enough to cause the star to rapidly expand, so that when the ash reaches the antipodal point, the surface density is too low to initiate a detonation. Instead, as the ash flows into the collision region (while mixing with surface fuel), the star reaches its maximally expanded state and then contracts. The stellar contraction acts to increase the density of the star, including the density in the collision region. This both raises the temperature and density of the fuel-ash mixture in the collision region and ultimately leads to thermodynamic conditions that are necessary for the Zel'dovich gradient mechanism to produce a detonation. We demonstrate feasibility of this scenario with three three-dimensional (3D), full star simulations of this model using the FLASH code. We characterized the simulations by the energy released during the deflagration phase, which ranged from 38% to 78% of the white dwarf's binding energy. We show that the necessary conditions for detonation are achieved in all three of the models.

  9. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  10. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  11. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  12. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  13. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  14. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  15. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  16. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  17. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  18. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  19. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  20. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  1. MID-IR SPECTRA OF TYPE Ia SN 2014J IN M82 SPANNING THE FIRST 4 MONTHS

    SciTech Connect (OSTI)

    Telesco, Charles M.; Li, Dan; Barnes, Peter J.; Mariñas, Naibí; Zhang, Han; Höflich, Peter; Álvarez, Carlos; Fernández, Sergio; Rebolo, Rafael; Hough, James H.; Levenson, N. A.; Pantin, Eric; Roche, Patrick E-mail: phoeflich77@gmail.com

    2015-01-10

    We present a time series of 8-13 μm spectra and photometry for SN 2014J obtained 57, 81, 108, and 137 days after the explosion using CanariCam on the Gran Telescopio Canarias. This is the first mid-IR time series ever obtained for a Type Ia supernova (SN Ia). These observations can be understood within the framework of the delayed detonation model and the production of ∼0.6 M {sub ☉} of {sup 56}Ni, consistent with the observed brightness, the brightness decline relation, and the γ-ray fluxes. The [Co III] line at 11.888 μm is particularly useful for evaluating the time evolution of the photosphere and measuring the amount of {sup 56}Ni and thus the mass of the ejecta. Late-time line profiles of SN 2014J are rather symmetric and not shifted in the rest frame. We see argon emission, which provides a unique probe of mixing in the transition layer between incomplete burning and nuclear statistical equilibrium. We may see [Fe III] and [Ni IV] emission, both of which are observed to be substantially stronger than indicated by our models. If the latter identification is correct, then we are likely observing stable Ni, which might imply central mixing. In addition, electron capture, also required for stable Ni, requires densities larger than ∼1 × 10{sup 9} g cm{sup –3}, which are expected to be present only in white dwarfs close to the Chandrasekhar limit. This study demonstrates that mid-IR studies of SNe Ia are feasible from the ground and provide unique information, but it also indicates the need for better atomic data.

  2. Systematic uncertainties associated with the cosmological analysis of the first Pan-STARRS1 type Ia supernova sample

    SciTech Connect (OSTI)

    Scolnic, D.; Riess, A.; Brout, D.; Rodney, S. [Department of Physics and Astronomy, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218 (United States); Rest, A. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Huber, M. E.; Tonry, J. L. [Institute for Astronomy, University of Hawaii, 2680 Woodlawn Drive, Honolulu, HI 96822 (United States); Foley, R. J.; Chornock, R.; Berger, E.; Soderberg, A. M.; Stubbs, C. W.; Kirshner, R. P.; Challis, P.; Czekala, I.; Drout, M. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Narayan, G. [Department of Physics, Harvard University, 17 Oxford Street, Cambridge, MA 02138 (United States); Smartt, S. J.; Botticella, M. T. [Astrophysics Research Centre, School of Mathematics and Physics, Queens University Belfast, Belfast BT7 1NN (United Kingdom); Schlafly, E. [Max Planck Institute for Astronomy, Konigstuhl 17, D-69117 Heidelberg (Germany); and others

    2014-11-01

    We probe the systematic uncertainties from the 113 Type Ia supernovae (SN Ia) in the Pan-STARRS1 (PS1) sample along with 197 SN Ia from a combination of low-redshift surveys. The companion paper by Rest et al. describes the photometric measurements and cosmological inferences from the PS1 sample. The largest systematic uncertainty stems from the photometric calibration of the PS1 and low-z samples. We increase the sample of observed Calspec standards from 7 to 10 used to define the PS1 calibration system. The PS1 and SDSS-II calibration systems are compared and discrepancies up to ?0.02 mag are recovered. We find uncertainties in the proper way to treat intrinsic colors and reddening produce differences in the recovered value of w up to 3%. We estimate masses of host galaxies of PS1 supernovae and detect an insignificant difference in distance residuals of the full sample of 0.037 0.031 mag for host galaxies with high and low masses. Assuming flatness and including systematic uncertainties in our analysis of only SNe measurements, we find w =?1.120{sub ?0.206}{sup +0.360}(Stat){sub ?0.291}{sup +0.269}(Sys). With additional constraints from Baryon acoustic oscillation, cosmic microwave background (CMB) (Planck) and H {sub 0} measurements, we find w=?1.166{sub ?0.069}{sup +0.072} and ?{sub m}=0.280{sub ?0.012}{sup +0.013} (statistical and systematic errors added in quadrature). The significance of the inconsistency with w = 1 depends on whether we use Planck or Wilkinson Microwave Anisotropy Probe measurements of the CMB: w{sub BAO+H0+SN+WMAP}=?1.124{sub ?0.065}{sup +0.083}.

  3. Nearby Supernova Factory Observations of SN 2005gj: Another TypeIa Supernova in a Massive Circumstellar Envelope

    SciTech Connect (OSTI)

    Aldering, G.; Antilogus, P.; Bailey, S.; Baltay, C.; Bauer, A.; Blanc, N.; Bongard, S.; Copin, Y.; Gangler, E.; Gilles, S.; Kessler, R.; Kocevski, D.; Lee, B.C.; Loken, S.; Nugent, P.; Pain, R.; Pecontal, E.; Pereira, R.; Perlmutter, S.; Rabinowitz, D.; Rigaudier, G.; Scalzo, R.; Smadja, G.; Thomas, R.C.; Wang, L.; Weaver, B.A.; Rabinowitz, D.; Bauer, A.

    2006-06-01

    We report the independent discovery and follow-up observations of supernova 2005gj by the Nearby Supernova Factory. This is the second confirmed case of a ''hybrid'' Type Ia/IIn supernova, which like the prototype SN 2002ic, we interpret as the explosion of a white dwarf interacting with a circumstellar medium. Our early-phase photometry of SN 2005gj shows that the strength of the interaction between the supernova ejecta and circumstellar material is much stronger than for SN 2002ic. Our .rst spectrum shows a hot continuum with broad and narrow H{alpha} emission. Later spectra, spanning over 4 months from outburst, show clear Type Ia features combined with broad and narrow H{gamma}, H{beta},H{alpha} and He I {lambda}{lambda}5876,7065 in emission. At higher resolution, P Cygni profiles are apparent. Surprisingly, we also observe an inverted P Cygni profile for [O III] {lambda}5007. We find that the lightcurve and measured velocity of the unshocked circumstellar material imply mass loss as recently as 8 years ago. This is in contrast to SN 2002ic, for which an inner cavity in the circumstellar material was inferred. Within the context of the thin-shell approximation, the early lightcurve is well-described by a flat radial density profile for the circumstellar material. However, our decomposition of the spectra into Type Ia and shock emission components allows for little obscuration of the supernova, suggesting an aspherical or clumpy distribution for the circumstellar material. We suggest that the emission line velocity profiles arise from electron scattering rather than the kinematics of the shock. This is supported by the inferred high densities, and the lack of evidence for evolution in the line widths. Ground- and space-based photometry, and Keck spectroscopy, of the host galaxy are used to ascertain that the host galaxy has low metallicity (Z/Z{sub {circle_dot}} < 0.3; 95% confidence) and that this galaxy is undergoing a significant star formation event that began roughly 200 {+-} 70 Myr ago. We discuss the implications of these observations for progenitor models and cosmology using Type Ia supernovae.

  4. DISPLAYING THE HETEROGENEITY OF THE SN 2002cx-LIKE SUBCLASS OF TYPE Ia SUPERNOVAE WITH OBSERVATIONS OF THE Pan-STARRS-1 DISCOVERED SN 2009ku

    SciTech Connect (OSTI)

    Narayan, G.; Foley, R. J.; Berger, E.; Chornock, R.; Rest, A.; Soderberg, A. M.; Kirshner, R. P.; Botticella, M. T.; Smartt, S.; Valenti, S.; Huber, M. E.; Scolnic, D.; Grav, T.; Burgett, W. S.; Chambers, K. C.; Flewelling, H. A.; Gates, G.; Kaiser, N.; Magnier, E. A.; Morgan, J. S. E-mail: rfoley@cfa.harvard.edu

    2011-04-10

    SN 2009ku, discovered by Pan-STARRS-1, is a Type Ia supernova (SN Ia), and a member of the distinct SN 2002cx-like class of SNe Ia. Its light curves are similar to the prototypical SN 2002cx, but are slightly broader and have a later rise to maximum in g. SN 2009ku is brighter ({approx}0.6 mag) than other SN 2002cx-like objects, peaking at M{sub V} = -18.4 mag, which is still significantly fainter than typical SNe Ia. SN 2009ku, which had an ejecta velocity of {approx}2000 km s{sup -1} at 18 days after maximum brightness, is spectroscopically most similar to SN 2008ha, which also had extremely low-velocity ejecta. However, SN 2008ha had an exceedingly low luminosity, peaking at M{sub V} = -14.2 mag, {approx}4 mag fainter than SN 2009ku. The contrast of high luminosity and low ejecta velocity for SN 2009ku is contrary to an emerging trend seen for the SN 2002cx class. SN 2009ku is a counterexample of a previously held belief that the class was more homogeneous than typical SNe Ia, indicating that the class has a diverse progenitor population and/or complicated explosion physics. As the first example of a member of this class of objects from the new generation of transient surveys, SN 2009ku is an indication of the potential for these surveys to find rare and interesting objects.

  5. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  6. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  7. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  8. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  9. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  10. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  11. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  12. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  13. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  14. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  15. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  16. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  17. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  18. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  19. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  20. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  1. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  2. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  3. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  4. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  5. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  6. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  7. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  8. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  9. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  10. A Chandrasekhar mass progenitor for the Type Ia supernova remnant 3C 397 from the enhanced abundances of nickel and manganese

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yamaguchi, Hiroya; Badenes, Carles; Foster, Adam R.; Bravo, Eduardo; Williams, Brian J.; Maeda, Keiichi; Nobukawa, Masayoshi; Eriksen, Kristoffer A.; Brickhouse, Nancy S.; Petre, Robert; et al

    2015-03-12

    Despite decades of intense efforts, many fundamental aspects of Type Ia supernovae (SNe Ia) remain elusive. One of the major open questions is whether the mass of an exploding white dwarf (WD) is close to the Chandrasekhar limit. Here, we report the detection of strong K-shell emission from stable Fe-peak elements in the Suzaku X-ray spectrum of the Type Ia supernova remnant (SNR) 3C 397. The high Ni/Fe and Mn/Fe mass ratios (0.11–0.24 and 0.018–0.033, respectively) in the hot plasma component that dominates the K-shell emission lines indicate a degree of neutronization in the supernova ejecta that can only bemore » achieved by electron capture in the dense cores of exploding WDs with a near-Chandrasekhar mass. This suggests a single-degenerate origin for 3C 397, since Chandrasekhar mass progenitors are expected naturally if the WD accretes mass slowly from a companion. Altogether with other results supporting the double-degenerate scenario, our work adds to the mounting evidence that both progenitor channels make a significant contribution to the SN Ia rate in star-forming galaxies.« less

  11. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  12. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  13. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  14. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  15. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  16. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  17. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  18. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  19. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  20. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  1. 3REV2004DOEFAIR.xls

    Energy Savers [EERE]

    ... US 1 D100 C A 1999 1988 019-20 EE DC Washington US 1 D000 C B 1999 1989 019-20 EE GA Atlanta US 2 D701 C A 1999 1990 019-20 EE GA Atlanta US 10 D701 C A 1999 1991 019-20 EE GA ...

  2. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  3. Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well

    Office of Scientific and Technical Information (OSTI)

    lasers on InP substrate (Journal Article) | SciTech Connect Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate Citation Details In-Document Search Title: Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density

  4. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  5. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  6. OE News Archive | Department of Energy

    Office of Environmental Management (EM)

    On March 22, 2016, as the first-ever International Synchrophasor Symposium continues in Atlanta, GA, the Department of Energy's (DOE) Office of Electricity Delivery and Energy ...

  7. Developing Refined Products Storage in the Strategic Petroleum...

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    ... These pipelines supply all or some of the refined products consumed in major population centers such as Nashville, TN; Atlanta, GA; Charlotte, NC; Washington, DC; Philadelphia, PA; ...

  8. SREL Reprint #3129

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    and Thomas J. Dichristina1 1School of Biology, Georgia Institute of Technology, Atlanta, GA 30332 2Robert P. Apkarian Integrated Electron Microscopy Core Facility, Emory ...

  9. Blower Door Tests | Department of Energy

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    ... Blower Door and Duct Blaster Testing (PDF 50 KB). (March 2002). Energy Fact Sheet 22. Atlanta, GA: Southface Energy Institute. Follow Us followontwitter.png followonfacebook.pn...

  10. Quality Assurance Corporate Board | Department of Energy

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    ... from meeting held in Augusta, GA. November 13, 2008 QA Corporate Board Meeting - November 2008 Board minutes, agenda, and presentations from meeting held in Atlanta, Georgia. ...

  11. Foreign Obligations Implementation Status Presentation

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    January 13, 2004 Obligations Accounting Implementation Workshop January 13, 2 Obligations Accounting Implementation Workshop January 13, 2004 Crowne Plaza Ravinia Atlanta, GA 004 ...

  12. Cyber Insurance

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    Piedmont Municipal Power Agency Alliance Meeting Atlanta, GA April 12, 2016 PMPA's Mission We provide our Public Power Communities reliable, competitive, wholesale electric and ...

  13. A Review

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    ... She received extraordinary accolades for the implementation of the Executive Order and is viewed as having utilized resources effectively. 1 Melinda Downing at Atlanta, GA, ...

  14. Energy Department Invests Over $7 Million to Commercialize Cost...

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    Center for Transportation and the Environment (3 million DOE investment): Based in Atlanta, Ga., the Center for Transportation and the Environment will develop a fuel cell hybrid ...

  15. Join Us for the Clean Energy Manufacturing Initiative's Western...

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    ... Innovation Successes and New Opportunities for Public-Private Partnerships Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit on July 9 in Atlanta, GA

  16. DOE Selects Projects to Advance Technologies for the Co-Production...

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    ... Georgia Institute of Technology (Atlanta, Ga.)--Georgia Tech will team with the National Renewable Energy Laboratory in Golden, Colo., to obtain experimental reactor data and ...

  17. Department of Energy Awards $2.2 Million to Save Energy in the...

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    NCSU will contribute a 44 percent cost share to this research project. Georgia Tech Research Corporation in Atlanta, Ga., will receive approximately 100,000 to examine new ...

  18. Impacts of Long-term Drought on Power Systems in the U.S. Southwest...

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    ... Long-Term Reliability Assessment, North American Electric Reliability Corporation, Atlanta GA (www.nerc.com,) November 2011. NERC 2012, Summer Reliability Assessment 20102, North ...

  19. Energy Department Invests $6 Million to Increase Building Energy...

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    Transformation (Washington, DC) Performance Systems Development (Ithaca, NY) Southeast Energy Efficiency Alliance (Atlanta, GA) Lean more about BTO's Building Energy Codes Program. ...

  20. Uranium Biomineralization By Natural Microbial Phosphatase Activities...

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    Authors: Taillefert, Martial 1 + Show Author Affiliations Georgia Tech Research Corporation, Atlanta, GA (United States) Publication Date: 2015-04-01 OSTI Identifier: 1177451 ...

  1. CEMI Is Working with Industry to Make the U.S. the Leader in...

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    ... We've organized regional CEMI summits in Toledo, OH; San Francisco, CA; and Atlanta, GA. Through our American Energy & Manufacturing Competitiveness Partnership (AEMC) with the ...

  2. Integrated Design: A High-Performance Solution for Affordable...

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    Lead Performer: The Levy Partnership, Inc.-New York, NY Partners: Habitat for Humanity International Habitat Research Foundation, Atlanta, GA Columbia Count Habitat, NY Habitat of ...

  3. DOE Selects 16 Transformational Carbon Capture Technologies Projects...

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    Enabling 10 molkg Swing Capacity via Heat Integrated Sub-ambient Pressure Swing Adsorption Researchers at Georgia Tech Research Corporation (Atlanta, GA) and Inmondo Tech ...

  4. Lakes_Elec_You

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    ... Florida Jim Woodruff Preference Customers 115 Lincoln Drive Chattahoochee, FL 32324 850663-4475 Georgia Municipal Electric Authority of Georgia Atlanta, GA 30328-4640 770952-5445 ...

  5. bcpcfcp-selfscrub | netl.doe.gov

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    (Custom Coals Corporation), Second Annual Clean Coal Technology Conference, Atlanta, GA Self Scrubbing Coal(tm): An Integrated Approach to Clean Air (Sept 1992) R.L. Godfrey ...

  6. Submission Format for IMS2004 (Title in 18-point Times font)

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    2 , Robert J. Broderick 2 , Santiago Grijalva 1 1 Georgia Institute of Technology, Atlanta, GA, USA 2 Sandia National Laboratories, Albuquerque, NM, USA Abstract - Utilities ...

  7. Submission Format for IMS2004 (Title in 18-point Times font)

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    , Robert J. Broderick 2 , Santiago Grijalva 1 1 Georgia Institute of Technology, Atlanta, GA, USA 2 Sandia National Laboratories, Albuquerque, NM, USA Abstract - As the ...

  8. Submission Format for IMS2004 (Title in 18-point Times font)

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    1 , Robert Broderick 2 , Santiago Grijalva 1 1 Georgia Institute of Technology, Atlanta, GA, USA 2 Sandia National Laboratories, Albuquerque, NM, USA Abstract - With increasing ...

  9. Race to Zero 2015 Analysis Excellence Award Presentations | Department...

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    Student Design Competition Analysis Excellence Award winners. HouZe GT - The Zeroes Georgia Institute of Technology, Atlanta, GA The Corner House - DASHaus Ryerson University, ...

  10. QER - Comment of Energy Innovation 7 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Aggarwal Subject: RE: Comment on the QER Public Meeting in Atlanta, GA: BusinessEconomic Development Attachment: APP-UTILITIES.pdf; SPSC-CREPCNewRegulatoryModels.pdf Apologies. ...

  11. Halting_Title_XVII_Nuclear_Loan_Guarantees.pdf

    Office of Environmental Management (EM)

    ... Hill, NC Durham, NC Bobbie Paul Georgia Women's Action for New Directions (WAND) Atlanta, GA Nuclear Information and Resource Service - Public Citizen Chesapeake Safe Energy ...

  12. 2015 Results | Department of Energy

    Office of Environmental Management (EM)

    See team presentations. Analysis Excellence HouZe GT - The Zeroes Georgia Institute of Technology, Atlanta, GA The Corner House - DASHaus Ryerson University, Toronto, Ontario, ...

  13. Submission Format for IMS2004 (Title in 18-point Times font)

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    , Robert J. Broderick 2 , Ronald G. Harley 1 1 Georgia Institute of Technology, Atlanta, GA, USA 2 Sandia National Laboratories, Albuquerque, NM, USA Abstract - The use of ...

  14. bectso-conzo | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Pennsylvania Electric Company), Second Annual Clean Coal Technology Conference, Atlanta, GA. U.S. Department of Energy report CONF-9309152. Update and Results of Bechtel's ...

  15. Sandia National Laboratories: 13,051 lbs of Carpet Sent for Reuse

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    Previous shipments sent out for recycle were delivered to Interface Carpet in Atlanta, GA, where the manufacture has an extensive recycling program that recycles vinyl backed ...

  16. Microsoft Word - Andrews_SREL-CV-Nov-2013-no-in-prep_no-refs...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Field module on urban herpetology on Jekyll Island (Undergraduate; Emory College - Atlanta, GA; 2012-2013) Invited lecture in Conservation of Amphibians and Reptiles Class ...

  17. Hydrogen Infrastructure Expansion: Consumer Demand and Cost-Reduction...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Discrete Choice Consumer Survey * Received 500 responses from each city: * Los Angeles, CA * Atlanta, GA * Minneapolis, MN * Seattle, WA * Two choices: 1. Conventional vehicle 2. ...

  18. Expert Meeting Report: Interior Insulation Retrofit of Mass Masonry...

    Energy Savers [EERE]

    ... 2010a). "Building Sciences: Rubble Foundations." ASHRAE Journal (vol. 52); pp. 72-78. Atlanta, GA: American Society of Heating, Refrigeration, and Air- Conditioning Engineers, Inc. ...

  19. 8.5x11 ARM Brochure

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    Corp CA * Vaisala Finland Universities * Boston University MA * Clark Atlanta University GA * Colorado State University CO * Desert Research Institute NV * Florida State ...

  20. DOE Pens New Agreement with Southern Company to Test Advanced...

    Office of Environmental Management (EM)

    Under the agreement, which will be managed by the National Energy Technology Laboratory, Southern Company (Atlanta, Ga.) will test both pre- and post-combustion carbon-capture ...

  1. I

    Office of Legacy Management (LM)

    ... TN) JsexI in conjunction with: Ad Shield Model G-16 IApplied Physical Technology, Atlanta, . GA) and Multichannel Analyzer 1100 Vax Workstation ,Canberra, Meriien, CT) ,,,: bw ...

  2. Submission Format for IMS2004 (Title in 18-point Times font)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    , Robert J. Broderick 2 , Santiago Grijalva 1 1 Georgia Institute of Technology, Atlanta, GA, USA 2 Sandia National Laboratories, Albuquerque, NM, USA Abstract - Many utilities ...

  3. baepgfb-mac4a | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Kruempel et al., (Midwest Power), Second Annual Clean Coal Technology Conference, Atlanta, GA Process Performance of Ahlstrom Pyroflow PCFB Pilot Plant (May 1993) K.M. Sellakumar, ...

  4. EcoCAR: The NeXt Challenge | Department of Energy

    Office of Environmental Management (EM)

    ... The EcoCAR teams are: Embry Riddle Aeronautical University (Daytona Beach, FL) Georgia Tech (Atlanta, GA) Michigan Technological University (Houghton, MI) Mississippi State ...

  5. Energy Secretary Ernest Moniz Remarks at Vogtle Electric Generating...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Remarks at Vogtle Electric Generating Plant Loan Guarantee Announcement in Waynesboro, GA ... Of course, Atlanta in particular was on the national news in terms of these incredible ...

  6. Revised Manuscript May

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    NC 27708-0308 b Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 c Department of Physics, North Carolina State University, Raleigh, NC ...

  7. DOE Zero Energy Ready Home Case Study: Caldwell and Johnson,...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Home DOE Zero Energy Ready Home Case Study: Transformations Inc., Custom House, Devens, MA DOE Zero Energy Ready Home Case Study: Heirloom Design Build, Euclid Avenue, Atlanta, GA

  8. ORISE Resources: Population Monitoring in Radiation Emergencies

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    and Local Public Health Planners was released in April and presented at the National Association of County and City Health Officials (NACCHO) Preparedness Summit in Atlanta, Ga. ...

  9. ORISE: Research Participation Programs by Sponsor

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    graduates, and university faculty opportunities to participate in project-specific CDC research and current public health research initiatives at their facilities in Atlanta, Ga. ...

  10. Other Participants 1994 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    ... School , Tahlequah , OK Thomas Jefferson High School , Alexandria , VA Turpin High School , Cincinnati , OH Venice High School , Los Angeles , CA Westminster School , Atlanta , GA

  11. Measuring the X-ray Resolving Power of Bent Potassium Acid Phthalate...

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    11; Conference: 20th Topical Conference on High-Temperature Plasma Diagnostics, Atlanta, GA, June 2014; Related Information: This is the version that was submitted to the journal. ...

  12. Experimental tests of paleoclassical transport

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    Livermore National Laboratory, Livermore, CA 94551-0808, USA 11 Georgia Tech, Atlanta, GA 30332, USA 12 Johns Hopkins University, Baltimore, MD 21218, USA E-mail: ...

  13. Paper Title (use style: paper title)

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    School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta, GA, USA Matthew J. Reno, Robert J. Broderick Sandia National Laboratories Albuquerque, ...

  14. Expert Meeting Report: Cladding Attachment Over Exterior Insulation

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    ... Presented at the BEST3 Conference, Atlanta, GA. Parsons G.; Hansboro, J.; Lapham, M.; Mazor, M.; Shembekar, P.; Maurer, M. (2011). "Three- Coat Stucco Veneer Cladding Attachment ...

  15. Georgia and Arkansas Residential Energy Code Field Studies |...

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    Georgia and Arkansas Residential Energy Code Field Studies Lead Performer: Southeast Energy Efficiency Alliance - Atlanta, GA Partners: - Advanced Energy - Raleigh, NC - Arkansas ...

  16. NREL Technologies Win National Awards

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    Invented by Battelle of Columbus, Ohio, and commercialized by the Future Energy Resources Corp. of Atlanta, Ga., with assistance from NREL and Vermont's Burlington Electric ...

  17. Energy Department Advances Research on Methane Hydrates - the...

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    ... Energy Department Investment: 225,000Duration: 12 months Georgia Tech Research Corporation (Atlanta, Ga.) -- The research to be conducted by Georgia Tech will advance the ...

  18. Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast...

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    Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional Summit on July 9 in Atlanta, GA Upcoming Clean Energy Manufacturing Initiative (CEMI) Southeast Regional ...

  19. The National Traffic Safety Summit Traffic Incident Management...

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    and Mapping ) Deputy Sean Alexander, Houston County Sheriff's Office, (Metro Atlanta, GA) 1030 to 1200 Criminalistics: Using Crime Labs in your Investigations (Evidence ...

  20. Presentations - Madison Dynamo Experiment - Cary Forest Group...

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    Conferences APS DPP 2009 Meeting, Atlanta, GA, November 2-6, 2009 Zane Taylor, Strategies for Observing Self-excitation in the Madison Dynamo Experiment Elliot Kaplan, Perturbative ...

  1. fe0013889-TEES | netl.doe.gov

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    Performers Texas A&M University, College Station, TX Georgia Tech Research Corporation, Atlanta GA Background The experimental study of hydrate-bearing sediments has been hindered ...

  2. AMO Industry Day Workshop, February 25th, Targets Smart Manufacturing...

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    The workshop will take place on Wednesday, February 25, 2015 at the Georgia Tech Global Learning Center, Atlanta, GA. AMO Industry Day will provide a valuable opportunity for ...

  3. baepgfb-tidd | netl.doe.gov

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    ... Research Institute Conference: Fluidized-Bed Combustion for Power Generation, Atlanta, GA Baseline Performance of a 200 MWe Pressurized Fluidized-Bed Combustor (Apr 1994) M.E. ...

  4. EcoCAR 3 Pushes the Vehicle Efficiency Envelope | Department...

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    ... Aeronautical University (Daytona Beach, Fla.), Georgia Institute of Technology (Atlanta, Ga.), McMaster University (Hamilton, Ontario, Canada), Mississippi State University ...

  5. SANDIA REPORT

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    ... and Computer Engineering Georgia Institute of Technology 777 Atlantic Drive NW Atlanta, GA 30332-0250 Matthew J. Reno, Robert J. Broderick Photovoltaics and Distributed Systems ...

  6. Paper Title (use style: paper title)

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    School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta, GA, USA Robert J. Broderick, Jimmy E. Quiroz Photovoltaics and Distributed Grid ...

  7. Other Participants 1993 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Downey High School , Modesto , CA Venice High School , Los Angeles , CA Walt Whitman High School , Bethesda , MD Westminster School , Atlanta , GA Woodbridge High School , Irvine

  8. SANDIA REPORT

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    ... and Computer Engineering Georgia Institute of Technology 777 Atlantic Drive NW Atlanta, GA 30332-0250 Abstract With an increasing number of Distributed Generation (DG) being ...

  9. brwtp_tcigcc | netl.doe.gov

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    Schmid (TAMCO Power Partners), Second Annual Clean Coal Technology Conference, Atlanta, GA. U.S. Department of Energy report CONF-9309152 Toms Creek IGCC Demonstration Project ...

  10. Expert Meeting Report: Foundations Research Results

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    ... Proceedings of BEST 3 Conference, Atlanta, GA, April 2-4, 2012. TO BE PUBLISHED University of Minnesota, Foundation Test Facility, Heating Season System Results. ...

  11. bia-cemkiln | netl.doe.gov

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    (Passamaquoddy Technology, L.P.), Second Annual Clean Coal Technology Conference, Atlanta, GA. U.S. Department of Energy report CONF-9309152. Recovery Scrubber Installation and ...

  12. NREL: Energy Analysis - Elaine Hale

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    Austin, TX, 2004 B.S. in chemical engineering, Georgia Institute of Technology, Atlanta, GA, 2000 Prior work experience PfeifferVIGRE Instructor, Dept. of Computational and ...

  13. Energy Emergency Preparedness Quarterly Vol 1 Issue 4 - October...

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    Washington, DC, the FEMA Region IV Regional Response Coordination Center (RRCC) in Atlanta, GA, Region VI RRCC in Denton, TX, the Baton Rouge, LA Incident Management Assistance ...

  14. bia-pulse | netl.doe.gov

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    et al., (ThermoChem, Inc.), Second Annual Clean Coal Technology Conference, Atlanta, GA U.S. Department of Energy report CONF-9309152. Advanced Energy Conversion Systems ...

  15. SANDIA REPORT

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    ... and Computer Engineering Georgia Institute of Technology 777 Atlantic Drive NW Atlanta, GA 30332-0250 Abstract The research presented in this report compares several real-time ...

  16. Submission Format for IMS2004 (Title in 18-point Times font)

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    Laboratories, Albuquerque, NM, 87185, USA 2 Georgia Institute of Technology, Atlanta, GA, 30332, USA Abstract - This paper shows examples of detailed PV grid integration ...

  17. Building America Expert Meeting: Combustion Safety

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    ... Ventilation and Acceptable Indoor Air Quality in Low-Rise Residential Buildings. ANSIASHRAE Standard 62.2-2010. Atlanta, GA: ASHRAE. Accessed November 27, 2012: http:...

  18. bectno-180mw | netl.doe.gov

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    ... (Southern Research Institute), Second Annual Clean Coal Technology Conference, Atlanta, GA, U.S. Department of Energy report CONF-9309152. Results from the ICCT T-Fired ...

  19. Oak Ridge Associated Universities

    Office of Legacy Management (LM)

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  20. Microsoft Word - Tribal Call Jan 17 Summary 1-25-07 wep

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  1. 1

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  2. A new pre-processing method for scanning X-ray microdiffraction...

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    Resource Type: Conference Resource Relation: Conference: 2015 IEEE Biomedical Circuits and Systems Conference (BioCAS);Oct. 22-24, 205;Atlanta, GA Publisher: 2015 IEEE Biomedical ...

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    Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, ... Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK ...

  4. 2015 University Turbine Systems Research Workshop

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    University Turbine Systems Research Workshop November 3-5, 2015 Accommodations Georgian Terrace Hotel 659 Peachtree Street, NE Atlanta, GA 30308 The Georgian Terrace Hotel will be...

  5. Search for: All records | SciTech Connect

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United States) Battelle Memorial Institute (United States) Bechtel Hanford Inc. (BHI),...

  6. Methane Hydrate Advisory Committee Meeting Minutes, January 2010...

    Broader source: Energy.gov (indexed) [DOE]

    0 Atlanta, GA Methane Hydrate Advisory Committee Meeting Minutes, January 2010 More Documents & Publications Methane Hydrate Advisory Committee Meeting Minutes, March 2010 Methane...

  7. QER- Comment of Stephen Arthur 1

    Broader source: Energy.gov [DOE]

    Good morning, I simply was curious if the Atlanta, GA meeting on Business/Economic Development was still on schedule and going to take place?

  8. U.S. Secretary of Commerce Penny Pritzker and U.S. Secretary...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Inc. (San Diego, CA) * Sensity Systems Inc (Sunnyvale, CA) * SolarReserve (Santa Monica, CA) * Southern Company Services (Atlanta, GA) * the digit group, inc. ...

  9. Building Efficiency Technologies by Tomorrow's Engineers and...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Lead Performer: Georgia Institute of Technology - Atlanta, GA Partners: - Alphabet Energy - Hayward, CA - Alabama Heat Exchangers, AL - Advanced Renewable Energy - Emrgy Hydro - ...

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    Office of Scientific and Technical Information (OSTI)

    Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United States) Battelle Memorial Institute (United States) Bechtel...

  11. Microsoft Word - Document1

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... of Technology, Atlanta, GA) The Corner House - DASHaus (Ryerson University, ... Net Zero Ready Home - Prairie View A&M (Prairie View A&M University, Prairie View, ...

  12. Industrial Feedstock Flexibility Workshop Results

    SciTech Connect (OSTI)

    Ozokwelu, Dickson; Margolis, Nancy; Justiniano, Mauricio; Monfort, Joe; Brueske, Sabine; Sabouni, Ridah

    2009-08-01

    This report (PDF 649 KB) summarizes the results of the 2009 Industrial Feedstock Flexibility Workshop, which took place in Atlanta, GA on August 19-20, 2009.

  13. Standard Method of Test for Integrated Heat Pumps

    Broader source: Energy.gov [DOE]

    Lead Performer: Oak Ridge National Laboratory - Oak Ridge, TN Partners: -- ASHRAE - Atlanta, GA -- Air Conditioning, Heating, and Refrigeration Institute (AHRI) - Arlington, VA

  14. NETL F 451.1/1-1, Categorical Exclusion Designation Form

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    163 Praxair, Inc. Tonawanda, WV Georgia Institute of Technology, 505 10th Street, NW, Atlanta, GA 30332 FESCCAESD Kenneth David Lyons Improving Energy Efficiency of Air...

  15. About Us - SRSCRO

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GA and Aiken, SC and is less than three hours drive from Atlanta, Charlotte, the Blue Ridge Mountains and the Atlantic Ocean beaches of Savannah, Charleston, Myrtle Beach...

  16. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  17. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Citation Details In-Document Search Title: Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Abstract not provided. Authors: Ihlefeld, Jon ; Brumbach, Michael T. ; Allerman, Andrew A. ; Wheeler, David Roger ; Atcitty, Stanley Publication Date: 2015-01-01 OSTI Identifier: 1244879 Report Number(s): SAND2015-0073C 558329 DOE Contract Number: AC04-94AL85000 Resource

  18. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  19. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  20. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  1. Cosmological constraints from measurements of type Ia supernovae discovered during the first 1.5 yr of the Pan-STARRS1 survey

    SciTech Connect (OSTI)

    Rest, A. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Scolnic, D.; Riess, A.; Rodney, S.; Brout, D. [Department of Physics and Astronomy, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218 (United States); Foley, R. J.; Chornock, R.; Berger, E.; Soderberg, A. M.; Stubbs, C. W.; Kirshner, R. P.; Challis, P.; Czekala, I.; Drout, M. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Huber, M. E.; Tonry, J. L. [Institute for Astronomy, University of Hawaii, 2680 Woodlawn Drive, Honolulu, HI 96822 (United States); Narayan, G. [Department of Physics, Harvard University, 17 Oxford Street, Cambridge, MA 02138 (United States); Smartt, S. J. [Astrophysics Research Centre, School of Mathematics and Physics, Queens University Belfast, Belfast BT71NN (United Kingdom); Schlafly, E. [Max Planck Institute for Astronomy, Knigstuhl 17, D-69117 Heidelberg (Germany); Botticella, M. T. [INAF-Osservatorio Astronomico di Capodimonte, Salita Moiariello 16, I-80131 Napoli (Italy); and others

    2014-11-01

    We present griz {sub P1} light curves of 146 spectroscopically confirmed Type Ia supernovae (SNe Ia; 0.03 < z < 0.65) discovered during the first 1.5 yr of the Pan-STARRS1 Medium Deep Survey. The Pan-STARRS1 natural photometric system is determined by a combination of on-site measurements of the instrument response function and observations of spectrophotometric standard stars. We find that the systematic uncertainties in the photometric system are currently 1.2% without accounting for the uncertainty in the Hubble Space Telescope Calspec definition of the AB system. A Hubble diagram is constructed with a subset of 113 out of 146 SNe Ia that pass our light curve quality cuts. The cosmological fit to 310 SNe Ia (113 PS1 SNe Ia + 222 light curves from 197 low-z SNe Ia), using only supernovae (SNe) and assuming a constant dark energy equation of state and flatness, yields w=?1.120{sub ?0.206}{sup +0.360}(Stat){sub ?0.291}{sup +0.269}(Sys). When combined with BAO+CMB(Planck)+H {sub 0}, the analysis yields ?{sub M}=0.280{sub ?0.012}{sup +0.013} and w=?1.166{sub ?0.069}{sup +0.072} including all identified systematics. The value of w is inconsistent with the cosmological constant value of 1 at the 2.3? level. Tension endures after removing either the baryon acoustic oscillation (BAO) or the H {sub 0} constraint, though it is strongest when including the H {sub 0} constraint. If we include WMAP9 cosmic microwave background (CMB) constraints instead of those from Planck, we find w=?1.124{sub ?0.065}{sup +0.083}, which diminishes the discord to <2?. We cannot conclude whether the tension with flat ?CDM is a feature of dark energy, new physics, or a combination of chance and systematic errors. The full Pan-STARRS1 SN sample with ?three times as many SNe should provide more conclusive results.

  2. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  3. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect (OSTI)

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  4. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  5. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  6. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect (OSTI)

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  7. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  8. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  9. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  10. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  11. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    Patent: Reactive codoping of GaAlInP compound semiconductors Citation Details In-Document Search Title: Reactive codoping of GaAlInP compound semiconductors A GaAlInP compound ...

  12. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  13. Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A.; Geib, Kent M.; Briggs, Ronald D.; Beechem, Thomas E.; Shaffer, Ryan A.; Clevenger, Jascinda; Patrizi, Gary A.; Klem, John F.; et al

    2016-04-21

    Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less

  14. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  15. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect (OSTI)

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  16. No X-rays from the very nearby type Ia SN 2014J: Constraints on its environment

    SciTech Connect (OSTI)

    Margutti, R.; Parrent, J.; Kamble, A.; Soderberg, A. M.; Milisavljevic, D.; Drout, M. R.; Kirshner, R. [Harvard-Smithsonian Center for Astrophysics, 60 Garden St., Cambridge, MA 02138 (United States); Foley, R. J. [Astronomy Department, University of Illinois at Urbana-Champaign, 1002 W. Green Street, Urbana, IL 61801 (United States)

    2014-07-20

    Deep X-ray observations of the post-explosion environment around the very nearby Type Ia SN 2014J (d{sub L} = 3.5 Mpc) reveal no X-ray emission down to a luminosity L{sub x} < 7 10{sup 36} erg s{sup 1} (0.3-10 keV) at ?t ? 20 days after the explosion. We interpret this limit in the context of inverse Compton emission from upscattered optical photons by the supernova shock and constrain the pre-explosion mass-loss rate of the stellar progenitor system to be M-dot <10{sup ?9} M{sub ?} yr{sup ?1} (for wind velocity v{sub w} = 100 km s{sup 1}). Alternatively, the SN shock might be expanding into a uniform medium with density n{sub CSM} < 3 cm{sup 3}. These results rule out single-degenerate (SD) systems with steady mass loss until the terminal explosion and constrain the fraction of transferred material lost at the outer Lagrangian point to be ?1%. The allowed progenitors are (1) white dwarf-white dwarf progenitors, (2) SD systems with unstable hydrogen burning experiencing recurrent nova eruptions with recurrence time t < 300 yr, and (3) stars where the mass loss ceases before the explosion.

  17. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  18. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect (OSTI)

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  19. ASYMMETRY IN THE OBSERVED METAL-RICH EJECTA OF THE GALACTIC TYPE IA SUPERNOVA REMNANT G299.22.9

    SciTech Connect (OSTI)

    Post, Seth; Park, Sangwook [Department of Physics, University of Texas at Arlington, Arlington, Box 19059, TX 76019 (United States); Badenes, Carles [Department of Physics and Astronomy and Pittsburgh Particle Physics, Astrophysics, and Cosmology Center (PITT-PACC), University of Pittsburgh, 3941 OHara Street, Pittsburgh, PA 15260 (United States); Burrows, David N. [Department of Astronomy and Astrophysics, Pennsylvania State University, 525 Davey Laboratory, University Park, PA 16802 (United States); Hughes, John P. [Department of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ 08854-8019 (United States); Lee, Jae-Joon [Korea Astronomy and Space Science Institute, Daejeon 305-348 (Korea, Republic of); Mori, Koji [Department of Applied Physics, University of Miyazaki, 1-1 Gakuen Kibana-dai Nishi, Miyazaki 889-2192 (Japan); Slane, Patrick O., E-mail: seth.post@mavs.uta.edu, E-mail: badenes@pitt.edu, E-mail: burrows@astro.psu.edu, E-mail: jph@physics.rutgers.edu, E-mail: mori@astro.miyazaki-u.ac.jp, E-mail: slane@cfa.harvard.edu [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States)

    2014-09-01

    We have performed a deep Chandra observation of the Galactic TypeIa supernova remnant G299.22.9. Here we report the initial results from our imaging and spectral analysis. The observed abundance ratios of the central ejecta are in good agreement with those predicted by delayed-detonation TypeIa supernovae models. We reveal inhomogeneous spatial and spectral structures of metal-rich ejecta in G299.22.9. The Fe/Si abundance ratio in the northern part of the central ejecta region is higher than that in the southern part. A significant continuous elongation of ejecta material extends out to the western outermost boundary of the remnant. In this western elongation, both the Si and Fe are enriched with a similar abundance ratio to that in the southern part of the central ejecta region. These structured distributions of metal-rich ejecta material suggest that this TypeIa supernova might have undergone a significantly asymmetric explosion and/or has been expanding into a structured medium.

  20. Atlanta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Global Energy Holdings Group formerly Xethanol Corporation Navajo Wind Energy Plum Combustion Radiance Solar Servidyne SilvaGas Corporation FERCO Enterprises Inc Solar Systems...

  1. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  2. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  3. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect (OSTI)

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  4. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  5. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  6. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  7. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect (OSTI)

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-02-21

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  8. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing; Chen, Weixi; Ding, Ying

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  9. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  10. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  11. High Quantum Efficiency AlGaN/InGaN Photodetectors

    SciTech Connect (OSTI)

    Buckley, James H; Leopold, Daniel

    2009-11-24

    High efficiency photon counting detectors in use today for high energy particle detection applications have a significant spectral mismatch with typical sources and have a number of practical problems compared with conventional bialkali photomultiplier tubes. Numerous high energy physics experiments that employ scintillation light detectors or Cherenkov detectors would benefit greatly from photomultipliers with higher quantum efficiencies. The need for extending the sensitivity of photon detectors to the blue and UV wavebands comes from the fact that both Cherenkov light and some scintillators have an emission spectrum which is peaked at short wavelengths. This research involves the development of high quantum efficiency, high gain, UV/blue photon counting detectors based on AlGaN/InGaN photocathode heterostructures grown by molecular beam epitaxy (MBE). The work could eventually lead to nearly ideal light detectors with a number of distinct advantages over existing technologies for numerous applications in high-energy physics and particle astrophysics. Potential advantages include much lower noise detection, better stability and radiation resistance than other cathode structures, very low radioactive background levels for deep underground experiments and high detection efficiency of individual UV-visible photons. We are also working on the development of photocathodes with intrinsic gain, initially improving the detection efficiency of hybrid semiconductor-vacuum tube devices, and eventually leading to an all-solid-state photomultiplier device.

  12. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect (OSTI)

    Lin, Chien-Hung Lee, Chien-Ping

    2014-10-21

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 μm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV.

  13. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect (OSTI)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  14. A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Lee, Ching-Sung; Lour, Wen-Shiung; Ma, Yung-Chun; Ye, Sheng-Shiun

    2011-05-15

    Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

  15. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect (OSTI)

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??GaN/InGaN system is shown to have ?3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  16. Analysis of natural gases, AL, AR, FL, GA, IL, IN, IA, KY, LA, MD, MI, MS, MO, NJ, NY, NC, OH, PA, TN, VA, and WV; 1951-1991 (for microcomputers). Data file

    SciTech Connect (OSTI)

    Not Available

    1991-01-01

    The U.S. Bureau of Mines diskette contains analysis and related source data for 2,357 natural gas samples collected from miscellaneous states, which include the following states: Alabama, Arkansas (except Arkoma Basin), Florida, Georgia, Illinois, Indiana, Iowa, Kentucky, Louisiana, Maryland, Michigan, Mississippi, Missouri, New Jersey, New York, North Carolina, Ohio, Pennsylvania, Tennessee, Virginia, and West Virginia. All samples were obtained and analyzed as part of the Bureau's investigations of occurrences of helium in natural gases of countries with free market economies. The survey has been conducted since 1917. The analysis contained on the diskette contain the full range of component analysis data. Five files are on the diskette: READ.ME, MISC.TXT, MISC.DBF, USHEANAL.DBF, and BASINCDE.TXT.

  17. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    zduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigr, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  18. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN

    Office of Scientific and Technical Information (OSTI)

    Sandia National Laboratories Exceptional service in the national interest SAND2015-0073C Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN 22 January 2015 Jon Ihlefeld, Michael Brumbach, Andrew A. Allerman, David R. Wheeler, and Stanley Atcitty This work was supported by the U.S. Department of Energy's Office of Electricity Delivery and Energy Reliability Program managed by Dr. Imre Gyuk and the Laboratory Directed Research and Development Program at Sandia National

  19. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  20. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  1. Expectations for the hard x-ray continuum and gamma-ray line fluxes from the typE IA supernova SN 2014J in M82

    SciTech Connect (OSTI)

    The, Lih-Sin [Department of Physics and Astronomy, Clemson University, SC 29634 (United States); Burrows, Adam, E-mail: tlihsin@clemson.edu, E-mail: burrows@astro.princeton.edu [Department of Astrophysical Sciences, Princeton University, Princeton, NJ 08544 (United States)

    2014-05-10

    The hard X-ray continuum and gamma-ray lines from a Type Ia supernova dominate its integrated photon emissions and can provide unique diagnostics of the mass of the ejecta, the {sup 56}Ni yield and spatial distribution, its kinetic energy and expansion speed, and the mechanism of explosion. Such signatures and their time behavior 'X-ray' the bulk debris field in direct fashion, and do not depend on the ofttimes problematic and elaborate UV, optical, and near-infrared spectroscopy and radiative transfer that have informed the study of these events for decades. However, to date no hard photons have ever been detected from a Type Ia supernova in explosion. With the advent of the supernova SN 2014J in M82, at a distance of ?3.5 Mpc, this situation may soon change. Both NuSTAR and INTEGRAL have the potential to detect SN 2014J, and, if spectra and light curves can be measured, would usefully constrain the various explosion models published during the last ?30 yr. In support of these observational campaigns, we provide predictions for the hard X-ray continuum and gamma-line emissions for 15 Type Ia explosion models gleaned from the literature. The model set, containing as it does deflagration, delayed detonation, merger detonation, pulsational delayed detonation, and sub-Chandrasekhar helium detonation models, collectively spans a wide range of properties, and hence signatures. We provide a brief discussion of various diagnostics (with examples), but importantly make the spectral and line results available electronically to aid in the interpretation of the anticipated data.

  2. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  3. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  4. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  5. Type Ia Supernovae

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    that the universe is undergoing an accelerated expansion - a result which fits the General Relativity if a yet unknown form of "dark" energy is assumed to dominate the...

  6. IA News Archive

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Dilma Rousseff of Brazil and he announced the creation of a Strategic Energy Dialogue (SED) to support the two countries' common goals of developing safe, secure and affordable...

  7. IA Blog Archive

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2014 21:03:00 +0000 921386 at http:energy.gov Ministers Meet in Addis Ababa for U.S.-Africa Energy Ministerial http:energy.goviaarticlesministers-meet-addis-ababa-us-africa-...

  8. Gorchakova-IA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Google Rules of Behavior Form Google Rules of Behavior Form Google Rules of Behavior Form File Google Drive for Work Rules of Behavior Form More Documents & Publications Audit Report: DOE-OIG-16-12 Remote Access Options April 2014 Cybersecurity Awareness Campaign - Malware

    Atl anta, Georgia, March 19-23, 2001 1 Estimate of Horizontal Cloud Inhomogeneity Effect on Solar Radiative Fluxes for Conditions of Winter Zvenigorod Experiment I. A. Gorchakova, G. S. Golitsyn, and I. I. Mokhov

  9. THE EFFECT OF THE PRE-DETONATION STELLAR INTERNAL VELOCITY PROFILE ON THE NUCLEOSYNTHETIC YIELDS IN TYPE Ia SUPERNOVA

    SciTech Connect (OSTI)

    Kim, Yeunjin; Jordan, G. C. IV; Graziani, Carlo; Lamb, D. Q.; Truran, J. W.; Meyer, B. S.

    2013-07-01

    A common model of the explosion mechanism of Type Ia supernovae is based on a delayed detonation of a white dwarf. A variety of models differ primarily in the method by which the deflagration leads to a detonation. A common feature of the models, however, is that all of them involve the propagation of the detonation through a white dwarf that is either expanding or contracting, where the stellar internal velocity profile depends on both time and space. In this work, we investigate the effects of the pre-detonation stellar internal velocity profile and the post-detonation velocity of expansion on the production of {alpha}-particle nuclei, including {sup 56}Ni, which are the primary nuclei produced by the detonation wave. We perform one-dimensional hydrodynamic simulations of the explosion phase of the white dwarf for center and off-center detonations with five different stellar velocity profiles at the onset of the detonation. In order to follow the complex flows and to calculate the nucleosynthetic yields, approximately 10,000 tracer particles were added to every simulation. We observe two distinct post-detonation expansion phases: rarefaction and bulk expansion. Almost all the burning to {sup 56}Ni occurs only in the rarefaction phase, and its expansion timescale is influenced by pre-existing flow structure in the star, in particular by the pre-detonation stellar velocity profile. We find that the mass fractions of the {alpha}-particle nuclei, including {sup 56}Ni, are tight functions of the empirical physical parameter {rho}{sub up}/v{sub down}, where {rho}{sub up} is the mass density immediately upstream of the detonation wave front and v{sub down} is the velocity of the flow immediately downstream of the detonation wave front. We also find that v{sub down} depends on the pre-detonation flow velocity. We conclude that the properties of the pre-existing flow, in particular the internal stellar velocity profile, influence the final isotopic composition of burned matter produced by the detonation.

  10. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  11. Radiation resistance of GaAs-GaAlAs vertical cavity surface emitting lasers

    SciTech Connect (OSTI)

    Jabbour, J.; Zazoui, M.; Sun, G.C.; Bourgoin, J.C.; Gilard, O.

    2005-02-15

    The variations of the optical and electrical characteristics of a vertical cavity surface emitting laser based on GaAs quantum wells have been monitored versus irradiation with 1 MeV electrons. The results are understood by the introduction of nonradiative recombination centers in the wells whose characteristics, capture cross section for minority carriers times their introduction rate, can be determined. A similar study performed for proton irradiation shows that the results can be explained in the same way when the introduction rate of the defects is replaced by the proton energy loss into atomic collisions. These results allow us to deduce the equivalence between electron and proton irradiations: A flux of 1 proton cm{sup -2} which loses an energy E{sub nl} (eV) into atomic collisions is equivalent to a fluence of about 9x10{sup -2} E{sub nl} cm{sup -2}, 1 MeV electrons.

  12. Vertical zone melt growth of GaAs

    SciTech Connect (OSTI)

    Henry, R.L.; Nordquist, P.E.R.; Gorman, R.J.

    1993-12-31

    A Vertical Zone Melt (VZM) technique has been applied to the single crystal growth of GaAs. A pyrolytic boron nitride crucible and a (100) oriented seed were used along with liquid encapsulation by boric oxide. In the case of GaAs, the ampoule was pressurized with either argon or argensic vapor from elemental arsenic at pressures ranging from 1 to 2 atmospheres. A molten zone length of 22 mm gave a growth interface which is nearly flat and resulted in routine single crystal growth. Temperature gradients of 4{degrees}C/cm. and 9{degrees}C/cm. have produced dislocation densities of <1000/cm{sup 2} and 2000-5000/cm{sup 2} respectively for 34 mm diameter crystals of GaAs. Post growth cooling rates for GaAs have been 35, 160 and 500{degrees}C/hr. The cooling rate has been found to affect the number and size of arsenic precipitates and the EL2 concentration in the GaAs crystal. The effects of these and other growth parameters on the crystalline perfection and electrical properties of the crystals will be discussed.

  13. Maps and Directions | Savannah River Ecology Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Go under I-520 (Bobby Jones Expressway) and follow instructions (below) from Sandbar Ferry Rd. From AthensAtlanta, GA: Take I-20 east to Augusta, GA. Near Augusta, take I-520 ...

  14. DOE Zero Energy Ready Home Case Study: Heirloom Design Build...

    Broader source: Energy.gov (indexed) [DOE]

    PDF icon DOE Zero Energy Ready Home Case Study: Heirloom Design Build, Atlanta, GA More Documents & Publications DOE Zero Energy Ready Home Case Study: The Imery Group, Serenbe, GA ...

  15. Structural transformations in amorphous ↔ crystalline phase change of Ga-Sb alloys

    SciTech Connect (OSTI)

    Edwards, T. G.; Sen, S.; Hung, I.; Gan, Z.; Kalkan, B.; Raoux, S.

    2013-12-21

    Ga-Sb alloys with compositions ranging between ∼12 and 50 at. % Ga are promising materials for phase change random access memory applications. The short-range structures of two such alloys with compositions Ga{sub 14}Sb{sub 86} and Ga{sub 46}Sb{sub 54} are investigated, in their amorphous and crystalline states, using {sup 71}Ga and {sup 121}Sb nuclear magnetic resonance spectroscopy and synchrotron x-ray diffraction. The Ga and Sb atoms are fourfold coordinated in the as-deposited amorphous Ga{sub 46}Sb{sub 54} with nearly 40% of the constituent atoms being involved in Ga-Ga and Sb-Sb homopolar bonding. This necessitates extensive bond switching and elimination of homopolar bonds during crystallization. On the other hand, Ga and Sb atoms are all threefold coordinated in the as-deposited amorphous Ga{sub 14}Sb{sub 86}. Crystallization of this material involves phase separation of GaSb domains in Sb matrix and a concomitant increase in the Ga coordination number from 3 to 4. Results from crystallization kinetics experiments suggest that the melt-quenching results in the elimination of structural “defects” such as the homopolar bonds and threefold coordinated Ga atoms in the amorphous phases of these alloys, thereby rendering them structurally more similar to the corresponding crystalline states compared to the as-deposited amorphous phases.

  16. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Mller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jrgen; Glauser, Marlene; Carlin, Jean-Franois; Cosendey, Gatien; Butt, Raphal; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  17. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are {approx}10% lower than the predicted semi-empirical limit to open circuit voltage for a device having absorbing substrate; the voltages are {approx}17% below that for an Auger-limited device having back surface reflector and two-pass optical design.

  18. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240350?nm emission

    SciTech Connect (OSTI)

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240350?nm range with internal quantum efficiencies around 30%.

  19. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  20. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  1. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  2. Electronic contribution to friction on GaAs

    SciTech Connect (OSTI)

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  3. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  4. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  5. Airports & Lodging | Savannah River Ecology Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Airports and Lodging AIRPORTS Augusta, GA Augusta Regional Airport (Bush Field) - closest commercial airport; Delta and U.S. Express. Daniel Field - private planes, rentals, or chartered flights. Columbia, SC Columbia Metropolitan Airport - all major carriers; 1.5-2h drive to SREL. Atlanta, GA Hartsfield Airport - all major carriers; 2.5-3 hour drive from Atlanta, GA, to Aiken, SC. LODGING No lodging is available at SREL. However, hotels and motels are available in Aiken, SC, and Augusta, GA.

  6. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  7. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a ∼40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  8. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect (OSTI)

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  9. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  10. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

    SciTech Connect (OSTI)

    Tracy, Lisa A; Reno, John L.; Hargett, Terry W.

    2015-09-01

    Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank

  11. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  12. Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

    SciTech Connect (OSTI)

    Hu, J. Groeseneken, G.; Stoffels, S.; Lenci, S.; Venegas, R.; Decoutere, S.; Bakeroot, B.

    2015-02-23

    This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5?V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ?{sub B} increase) together with R{sub ON} degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.

  13. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice

    SciTech Connect (OSTI)

    Sobolev, M. M. Buyalo, M. S.; Nevedomskiy, V. N.; Zadiranov, Yu. M.; Zolotareva, R. V.; Vasil’ev, A. P.; Ustinov, V. M.; Portnoi, E. L.

    2015-10-15

    The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs spacer layers between InAs quantum dots are studied under the conditions of spontaneous and stimulated emission, depending on the current and the duration of pump pulses. Data obtained by transmission electron microscopy and electroluminescence and absorption polarization anisotropy measurements make it possible to demonstrate that the investigated system of tunnel-coupled InAs quantum dots separated by thin GaAs barriers represents a quantum-dot superlattice. With an increase in the laser pump current, the electroluminescence intensity increases linearly and the spectral position of the electroluminescence maximum shifts to higher energies, which is caused by the dependence of the miniband density-of-states distribution on the pump current. Upon exceeding the threshold current, multimode lasing via the miniband ground state is observed. One of the lasing modes can be attributed to the zero-phonon line, and the other is determined by the longitudinal-optical phonon replica of quantum-dot emission. The results obtained give evidence that, under conditions of the laser pumping of an In(Ga)As/GaAs quantum-dot superlattice, strong coupling between the discrete electron states in the miniband and optical phonons takes place. This leads to the formation of quantum-dot polarons, resulting from the resonant mixing of electronic states whose energy separation is comparable to the optical-phonon energy.

  14. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-lvarez, D.; Thomas, T.; Fhrer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6 misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  15. Defect-Reduction Mechanism for Improving Radiative Efficiency in InGaN/GaN Light-Emitting Diodes using InGaN Underlayers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Armstrong, Andrew M.; Bryant, Benjamin N.; Crawford, Mary H.; Koleske, Daniel D.; Lee, Stephen R.; Wierer, Jr., Jonathan J.

    2015-04-01

    The influence of a dilute InxGa1-xN (x~0.03) underlayer (UL) grown below a single In0.16Ga0.84N quantum well (SQW), within a light-emitting diode(LED), on the radiative efficiency and deep level defect properties was studied using differential carrier lifetime (DCL) measurements and deep level optical spectroscopy (DLOS). DCL measurements found that inclusion of the UL significantly improved LED radiative efficiency. At low current densities, the non-radiative recombination rate of the LED with an UL was found to be 3.9 times lower than theLED without an UL, while the radiative recombination rates were nearly identical. This, then, suggests that the improved radiative efficiency resultedmore » from reduced non-radiative defect concentration within the SQW. DLOS measurement found the same type of defects in the InGaN SQWs with and without ULs. However, lighted capacitance-voltage measurements of the LEDs revealed a 3.4 times reduction in a SQW-related near-mid-gap defect state for the LED with an UL. Furthermore, quantitative agreement in the reduction of both the non-radiative recombination rate (3.9×) and deep level density (3.4×) upon insertion of an UL corroborates deep level defect reduction as the mechanism for improved LED efficiency.« less

  16. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  17. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  18. Contrasting Behavior of GaP(001) and InP(001) at the Interface...

    Office of Scientific and Technical Information (OSTI)

    Contrasting Behavior of GaP(001) and InP(001) at the Interface with Water Citation Details In-Document Search Title: Contrasting Behavior of GaP(001) and InP(001) at the Interface ...

  19. Electron-limiting defect complex in hyperdoped GaAs: The D D...

    Office of Scientific and Technical Information (OSTI)

    Electron-limiting defect complex in hyperdoped GaAs: The D D X center Prev Next Title: Electron-limiting defect complex in hyperdoped GaAs: The D D X center Authors: Ma, Jie ...

  20. Coexistence of charge-density wave and ferromagnetism in Ni2MnGa...

    Office of Scientific and Technical Information (OSTI)

    Coexistence of charge-density wave and ferromagnetism in Ni2MnGa Citation Details In-Document Search Title: Coexistence of charge-density wave and ferromagnetism in Ni2MnGa ...

  1. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  2. Site-controlled fabrication of Ga nanodroplets by focused ion beam

    SciTech Connect (OSTI)

    Xu, Xingliang; Wang, Zhiming M.; Wu, Jiang; Li, Handong; Zhou, Zhihua; Wang, Xiaodong

    2014-03-31

    Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

  3. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  4. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and ... A GaAlInP compound semiconductor and a method of producing a GaAlInP compound ...

  5. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  6. Influence of Ga content on the structure and anomalous Hall effect of Fe{sub 1−x}Ga{sub x} thin films on GaSb(100)

    SciTech Connect (OSTI)

    Anh Tuan, Duong; Shin, Yooleemi; Viet Cuong, Tran; Cho, Sunglae; Phan, The-Long

    2014-05-07

    The Fe{sub 1−x}Ga{sub x} thin films (x = 0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc α-Fe crystal structure (A2) is observed in Fe{sub 0.6}Ga{sub 0.4} film, while an impure Fe{sub 3}Ga phase with DO{sub 3} structure is appeared in Fe{sub 0.5}Ga{sub 0.5} film. The saturated magnetizations at room temperature are observed to be 570 emu/cm{sup 3} and 180 emu/cm{sup 3} and the coercivities to be 170 and 364 Oe for Fe{sub 0.6}Ga{sub 0.4} and Fe{sub 0.5}Ga{sub 0.5}, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe{sub 0.5}Ga{sub 0.5} film. However, there is a weak hysteresis noticed in Fe{sub 0.4}Ga{sub 0.6} thin film.

  7. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA | Department

    Energy Savers [EERE]

    of Energy 6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA February 8, 2012 EIS-0476: Final Environmental Impact Statement Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA February 25, 2014 EIS-0476: Record of Decision Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA

  8. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Toms

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related specieshydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  9. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  10. High 400?C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?C. Even at 400?C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  11. Electrically active Er doping in InAs, In{sub 0.53}Ga{sub 0.47}As, and GaAs

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Electrically active Er doping in InAs, In{sub 0.53}Ga{sub 0.47}As, and GaAs Citation Details In-Document Search Title: Electrically active Er doping in InAs, In{sub 0.53}Ga{sub 0.47}As, and GaAs The electron concentration in dilute alloys of Er in GaAs, In{sub 0.53}Ga{sub 0.47}As, and InAs grown by molecular beam epitaxy is studied as a function of Er concentration and In content. Using first-principles calculations based on hybrid density functional

  12. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  13. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  14. 2009 TEPP Annual Report

    Office of Environmental Management (EM)

    ... 5 2 Beckley WV 2 15 11 26 14 Total 16 111 105 38 14 268 66 3 Athens GA 1 6 6 2 3 Atlanta GA 3 50 50 28 3 Calhoun GA 5 77 77 6 3 Dalton GA 6 104 104 25 3 Forsyth GA 1 13 15 28 5 ...

  15. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

    SciTech Connect (OSTI)

    Venkatasubramanian, R.

    1993-01-01

    This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  16. Electrically active Er doping in InAs, In[sub 0.53]Ga[sub 0.47]As, and GaAs

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Electrically active Er doping in InAs, In[sub 0.53]Ga[sub 0.47]As, and GaAs Citation Details In-Document Search Title: Electrically active Er doping in InAs, In[sub 0.53]Ga[sub 0.47]As, and GaAs Authors: Burke, Peter G. ; Ismer, Lars ; Lu, Hong ; Frantz, Elan ; Janotti, Anderson ; Van de Walle, Chris G. ; Bowers, John E. ; Gossard, Arthur C. Publication Date: 2012-01-01 OSTI Identifier: 1105361 DOE Contract Number: SC0001009 Resource Type: Journal Article

  17. Absorption enhancement through Fabry-Prot resonant modes in a 430?nm thick InGaAs/GaAsP multiple quantum wells solar cell

    SciTech Connect (OSTI)

    Behaghel, B.; Tamaki, R.; Watanabe, K.; Sodabanlu, H.; Vandamme, N.; Dupuis, C.; Bardou, N.; Cattoni, A.; Okada, Y.; Sugiyama, M.; Collin, S.; Guillemoles, J.-F.

    2015-02-23

    We study light management in a 430?nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

  18. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

    SciTech Connect (OSTI)

    Christy, Dennis; Watanabe, Arata; Egawa, Takashi

    2014-10-15

    The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

  19. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN

    Office of Scientific and Technical Information (OSTI)

    nanostructure arrays on GaN/sapphire template (Journal Article) | SciTech Connect Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template Citation Details In-Document Search Title: Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template Authors: Sundaram, S. [1] ; Puybaret, R. [2] ; El Gmili, Y. [1] ; Li, X. [2] ; Bonanno, P. L. [1] ; Pantzas, K. [3] Search SciTech

  20. Conductivity based on selective etch for GaN devices and applications thereof

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  1. ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub

    Office of Scientific and Technical Information (OSTI)

    x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect (Journal Article) | SciTech Connect ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect Citation Details In-Document Search Title: ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect This paper presents a study of the

  2. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect (OSTI)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

  3. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  4. Method of plasma etching Ga-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  5. Average Structure Evolution of ?-phase Pu-Ga Alloys

    SciTech Connect (OSTI)

    Smith, Alice Iulia; Page, Katharine L.; Gourdon, Olivier; Siewenie, Joan E.; Richmond, Scott; Saleh, Tarik A.; Ramos, Michael; Schwartz, Daniel S.

    2015-03-30

    [Full Text] Plutonium metal is a highly unusual element, exhibiting six allotropes at ambient pressure, from room temperature to its melting point. Many phases of plutonium metal are unstable with temperature, pressure, chemical additions, and time. This strongly affects structure and properties, and becomes of high importance, particularly when considering effects on structural integrity over long time periods. The fcc ?-phase deserves additional attention, not only in the context of understanding the electronic structure of Pu, but also as one of the few high-symmetry actinide phases that can be stabilized down to ambient pressure and room temperature by alloying it with trivalent elements. We will present results on recent work on aging of Pu-2at.%Ga and Pu-7at.%Ga alloys

  6. Photosensitivity of the Ni-n-GaAs Schottky barriers

    SciTech Connect (OSTI)

    Melebaev, D.; Melebaeva, G. D.; Rud', V. Yu. Rud', Yu. V.

    2009-01-15

    The method of chemical deposition is used to form the structures with the Ni-n-GaAs Schottky barrier. The thickness of the Ni layers with a specular outer surface was varied within the range of 150-220 A. It was experimentally observed for the first time that photosensitivity of the obtained barriers with the semitransparent Ni layers illuminated is practically absent in the Fowler region of the spectrum at hv = 0.9-1.5 eV. This circumstance is related mainly to the fact that, in this case, the Ni layer side of the structure was illuminated, and radiation with the photon energy hv < 1.3 eV was effectively reflected from the nickel surface. It is established that the developed Ni-n-GaAs structures can be used as high-efficiency wide-band photoconverters of both visible and ultraviolet radiation.

  7. Formation and properties of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  8. AlGaAs diode pumped tunable chromium lasers

    DOE Patents [OSTI]

    Krupke, William F.; Payne, Stephen A.

    1992-01-01

    An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

  9. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystalsionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  10. Characterization and device performance of (AgCu)(InGa)Se2 absorber layers

    SciTech Connect (OSTI)

    Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

    2009-06-08

    The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

  11. The transputer based GA. SP data acquisition system

    SciTech Connect (OSTI)

    Colombo, D.; Avano, B.; DePoli, M.; Maron, G. ); Negro, A.; Parlati, G. )

    1992-04-01

    In this paper, the new data acquisition for the GA.SP detector is presented. It is a distributed system based on a network of 40 T800 and T222 transputers linked to a VME system used for histogram storage. A 100 MBit/s FDDI ring connects the system to UNIX workstations used for the experiment control, histogram display and second level data analysis.

  12. Efficiency calculations of thin-film GaAs solar cells on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.

    1985-11-01

    Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

  13. Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers

    SciTech Connect (OSTI)

    Boyle, Jonathan; Hanket, Gregory; Shafarman, William

    2009-06-09

    (Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (?h?)2 vs. h?, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

  14. Crystallographically uniform arrays of ordered (In)GaN nanocolumns

    SciTech Connect (OSTI)

    Gačević, Ž. Bengoechea-Encabo, A.; Albert, S.; Calleja, E.

    2015-01-21

    In this work, through a comparative study of self-assembled (SA) and selective area grown (SAG) (In)GaN nanocolumn (NC) ensembles, we first give a detailed insight into improved crystallographic uniformity (homogeneity of crystallographic tilts and twists) of the latter ones. The study, performed making use of: reflective high energy electron diffraction, X-ray diffraction and scanning electron microscopy, reveals that unlike their SA counterparts, the ensembles of SAG NCs show single epitaxial relationship to both sapphire(0001) and Si(111) underlying substrates. In the second part of the article, making use of X-ray diffraction, we directly show that the selective area growth leads to improved compositional uniformity of InGaN NC ensembles. This further leads to improved spectral purity of their luminescence, as confirmed by comparative macro-photoluminescence measurements performed on SA and SAG InGaN NC ensembles. An improved crystallographic uniformity of NC ensembles facilitates their integration into optoelectronic devices, whereas their improved compositional uniformity allows for their employment in single-color optoelectronic applications.

  15. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-08-18

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5??10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  16. Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels

    SciTech Connect (OSTI)

    Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

    2006-01-01

    This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

  17. Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs

    SciTech Connect (OSTI)

    Matragrano, M.J.; Watson, G.P.; Ast, D.G. ); Anderson, T.J.; Pathangey, B. )

    1993-03-22

    Deep level transient spectroscopy (DLTS) and cathodoluminescence (CL) were used to study the hydrogen passivation of misfit dislocations in In[sub 0.06]Ga[sub 0.94]As/GaAs heterostructures. The CL observations indicate that hydrogen plasma exposure passivates most, but not all, of the dark line defects existing in the specimen prior to hydrogenation. The concentration of deep level defect states that cannot be passivated is below the detection limit of the DLTS instrument (approximately 4[times]10[sup 12] cm[sup [minus]3]). We find the passivation is stable after anneals at temperatures as high as 600 [degree]C, indicating that hydrogen passivation of misfit dislocations is at least as stable as that of the isolated point defect studied previously with DLTS [W. C. Dautremont-Smith, J. C. Nabity, V. Swaminathan, M. Stavola, J. Chevalier, C. W. Tu, and S. J. Pearton, Appl. Phys. Lett. [bold 49] 1098 (1986)].

  18. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  19. Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

    SciTech Connect (OSTI)

    Craig, A. P.; Percy, B.; Marshall, A. R. J.; Jain, M.; Wicks, G.; Hossain, K.; Golding, T.; McEwan, K.; Howle, C.

    2015-05-18

    Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

  20. Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces

    SciTech Connect (OSTI)

    Li, Huijie E-mail: sh-yyang@semi.ac.cn; Zhao, Guijuan; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Yang, Shaoyan E-mail: sh-yyang@semi.ac.cn; Wang, Lianshan; Zhu, Qinsheng

    2014-05-21

    One dimensional electron gas (1DEG) arrays in vicinal GaN/AlGaN heterostructures have been studied. The steps at the interface would lead to the lateral barriers and limit the electron movement perpendicular to such steps. Through a self-consistent Schrdinger-Poisson approach, the electron energy levels and wave functions were calculated. It was found that when the total electron density was increased, the lateral barriers were lowered due to the screening effects by the electrons, and the electron gas became more two-dimension like. The calculated 1DEG densities were compared to the experimental values and good agreements were found. Moreover, we found that a higher doping density is more beneficial to form 1-D like electron gas arrays.

  1. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 mΩ · cm2), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  2. Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Guo, Der-Feng; Lour, Wen-Shiung

    2011-09-15

    In this article, the comparison of DC performance on InGaP/GaAs pseudomorphic field-effect transistors with tripe doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity because more twodimensional electron gases are formed in the heaviest doped channel to enhance the magnitude of negative threshold voltage. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.

  3. Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

    SciTech Connect (OSTI)

    Ramanayaka, A. N.; Mani, R. G.; Wegscheider, W.

    2013-12-04

    We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ?{sub c}, and the microwave angular frequency, ?, satisfy 2? ? ?{sub c} ? 3.5? The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photo-excitation, in good agreement with theoretical predictions.

  4. Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires

    SciTech Connect (OSTI)

    Chen, S. L.; Filippov, S.; Chen, W. M.; Buyanova, I. A.; Ishikawa, Fumitaro

    2014-12-22

    Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (?-PL) and ?-PL excitation (?-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation.

  5. Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

    SciTech Connect (OSTI)

    Schmid, A. Schroeter, Ch.; Otto, R.; Heitmann, J.; Schuster, M.; Klemm, V.; Rafaja, D.

    2015-02-02

    Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9??10{sup ?6} ? cm{sup 2} was achieved at an annealing temperature of 650?C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150?K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

  6. Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH{sub 3}-molecular beam epitaxy

    SciTech Connect (OSTI)

    Fireman, Micha N.; Browne, David A.; Mazumder, Baishakhi; Speck, James S.; Mishra, Umesh K.

    2015-05-18

    The results of vertical transport through nitride heterobarrier structures grown by ammonia molecular beam epitaxy are presented. Structures are designed with binary layers to avoid the effects of random alloy fluctuations in ternary nitride barriers. The unintentional incorporation of Ga in the AlN growth is investigated by atom probe tomography and is shown to be strongly dependent on both the NH{sub 3} flowrate and substrate temperature growth parameters. Once nominally pure AlN layer growth conditions are achieved, structures consisting of unintentionally doped (UID) GaN spacer layers adjacent to a nominally pure AlN are grown between two layers of n+ GaN, from which isotype diodes are fabricated. Varying the design parameters of AlN layer thickness, UID spacer layer thickness, and threading dislocation density show marked effects on the vertical transport characteristics of these structures. The lack of significant temperature dependence, coupled with Fowler-Nordheim and/or Milliken-Lauritsen analysis, point to a prevalently tunneling field emission mechanism through the AlN barrier. Once flatband conditions in the UID layer are achieved, electrons leave the barrier with significant energy. This transport mechanism is of great interest for applications in hot electron structures.

  7. Temporally and spatially resolved photoluminescence investigation of (112{sup }2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates

    SciTech Connect (OSTI)

    Liu, B.; Smith, R.; Athanasiou, M.; Yu, X.; Bai, J.; Wang, T.

    2014-12-29

    By means of time-resolved photoluminescence (PL) and confocal PL measurements, temporally and spatially resolved optical properties have been investigated on a number of In{sub x}Ga{sub 1?x}N/GaN multiple-quantum-well (MQW) structures with a wide range of indium content alloys from 13% to 35% on (112{sup }2) semi-polar GaN with high crystal quality, obtained through overgrowth on nanorod templates. With increasing indium content, the radiative recombination lifetime initially increases as expected, but decreases if the indium content further increases to 35%, corresponding to emission in the green spectral region. The reduced radiative recombination lifetime leads to enhanced optical performance for the high indium content MQWs as a result of strong exciton localization, which is different from the behaviour of c-plane InGaN/GaN MQWs, where quantum confined Stark effect plays a dominating role in emission process.

  8. Selective area epitaxy of monolithic white-light InGaN/GaN quantum well microstripes with dual color emission

    SciTech Connect (OSTI)

    Li, Yuejing; Tong, Yuying; Yang, Guofeng Yao, Chujun; Sun, Rui; Cai, Lesheng; Xu, Guiting; Wang, Jin; Zhang, Qing; Ye, Xuanchao; Wu, Mengting; Wen, Zhiqin

    2015-09-15

    Monolithic color synthesis is demonstrated using InGaN/GaN multiple quantum wells (QWs) grown on GaN microstripes formed by selective area epitaxy on SiO{sub 2} mask patterns. The striped microfacet structure is composed of (0001) and (11-22) planes, attributed to favorable surface polarity and surface energy. InGaN/GaN QWs on different microfacets contain spatially inhomogeneous compositions owing to the diffusion of adatoms among the facets. This unique property allows the microfacet QWs to emit blue light from the (11-22) plane and yellow light from the top (0001) plane, the mixing of which leads to the perception of white light emission.

  9. H irradiation effects on the GaAs-like Raman modes in GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H planar heterostructures

    SciTech Connect (OSTI)

    Giulotto, E. Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S.

    2014-12-28

    The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H microwire heterostructureswith similar N concentration, but different H dose and implantation conditionshas been investigated by micro-Raman mapping. In the case of GaAs{sub 0.991}N{sub 0.009} wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs{sub 0.992}N{sub 0.008} wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence.

  10. DOE Zero Energy Ready Home Case Study: Heirloom Design Build, Euclid

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Avenue, Atlanta, GA | Department of Energy Heirloom Design Build, Euclid Avenue, Atlanta, GA DOE Zero Energy Ready Home Case Study: Heirloom Design Build, Euclid Avenue, Atlanta, GA Case study of a DOE 2015 Housing Innovation Award winning custom home in the mixed-humid climate that got a HERS 50 without PV, with 2x6 16" on center walls with R-19 ocsf; basement with R-28 ccsf, R-5 rigid foam under slab; sealed attic with R-28 ocsf under roof deck; 22.8 SEER; 12.5 HSPF heat pump. PDF

  11. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Masuda, T; Tomasulo, S; Lang, JR; Lee, ML

    2015-03-07

    We have investigated similar to 2.0 eV (AlxGa1-x)(0.51)In0.49P and similar to 1.9 eV Ga0.51In0.49P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (AlxGa1-x)(0.51)In0.49P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V-oc) ranging from 1.29 to 1.30 V for Ga0.51In0.49P cells, and 1.35-1.37 V for (AlxGa1-x)(0.51)In0.49P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W-oc = E-g/q - V-oc) of Ga0.51In0.49P cells to decrease from similar to 575 mV to similar to 565 mV, while that of (AlxGa1-x)(0.51)In0.49P cells remained nearly constant at 620 mV. The constant Woc as a function of substrate offcut for (AlxGa1-x)(0.51)In0.49P implies greater losses from non-radiative recombination compared with the Ga0.51In0.49P devices. In addition to larger Woc values, the (AlxGa1-x)(0.51)In0.49P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga0.51In0.49P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (AlxGa1-x)(0.51)In0.49P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells. (C) 2015 AIP Publishing LLC.

  12. Method of making V.sub.3 Ga superconductors

    DOE Patents [OSTI]

    Dew-Hughes, David

    1980-01-01

    An improved method for producing a vanadium-gallium superconductor wire having aluminum as a component thereof is disclosed, said wire being encased in a gallium bearing copper sheath. The superconductors disclosed herein may be fabricated under normal atmospheres and room temperatures by forming a tubular shaped billet having a core composed of an alloy of vanadium and aluminum and an outer sheath composed of an alloy of copper, gallium and aluminum. Thereafter the entire billet is swage reduced to form a wire therefrom and heat treated to form a layer of V.sub.3 Ga in the interior of the wire.

  13. " Best Practices Scorecard (c) GA Tech Research Corp.

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Best Practices Scorecard (c) GA Tech Research Corp. (c) Texas Industries of the Future" "Instructions for Using the Best Practice Scorecard Calculator" "This calculator was developed for use with the Superior Energy Performance's Best Practice Scorecard, revision 9, dated December 5, 2012." "How to use this calculator:" "1. On the Summary tab, press the hide or unhide buttons to show desired detail." "2. Click on the category links in the

  14. Structure, transport and thermal properties of UCoGa

    SciTech Connect (OSTI)

    Purwanto, A.; Robinson, R.A.; Prokes, K.

    1994-04-01

    By means of neutron powder diffraction, we find that UCoGa crystallizes in the hexagonal ZrNiAl structure and orders ferromagnetically at low temperatures with magnetic moments stacked along the c axis. The magnetic-ordering temperature is reflected in anomalies in the temperature dependencies of the electrical resistivity and the specific heat at Tc = 47 K. Furthermore, the strong anisotropy in the electrical resistivity for i {parallel} c and i {perpendicular} c indicates a significant contribution of the magnetic anisotropy to the electrical resistivity.

  15. Low dimensional GaAs/air vertical microcavity lasers

    SciTech Connect (OSTI)

    Gessler, J.; Steinl, T.; Fischer, J.; Hfling, S.; Schneider, C.; Kamp, M.; Mika, A.; S?k, G.; Misiewicz, J.

    2014-02-24

    We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

  16. Quantum effects in electron beam pumped GaAs

    SciTech Connect (OSTI)

    Yahia, M. E.; National Institute of Laser Enhanced Sciences , Cairo University ; Azzouz, I. M.; Moslem, W. M.

    2013-08-19

    Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

  17. Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology

    SciTech Connect (OSTI)

    Vernon, S.M. )

    1993-04-01

    This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

  18. Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence

    Office of Scientific and Technical Information (OSTI)

    on magnetic shape memory effect (Journal Article) | SciTech Connect Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magnetic shape memory effect Citation Details In-Document Search Title: Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magnetic shape memory effect Enhanced magnetic hysteresis due to boron doping in combination with magnetic shape memory effect in Ni-Mn-Ga single crystal results in new interesting functionality of

  19. GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

    SciTech Connect (OSTI)

    Liu, Dong; Sun, Huarui; Pomeroy, James W.; Kuball, Martin; Francis, Daniel; Faili, Firooz; Twitchen, Daniel J.

    2015-12-21

    The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

  20. Composition-dependent structural properties in ScGaN alloy films: A

    Office of Scientific and Technical Information (OSTI)

    combined experimental and theoretical study (Journal Article) | SciTech Connect Composition-dependent structural properties in ScGaN alloy films: A combined experimental and theoretical study Citation Details In-Document Search Title: Composition-dependent structural properties in ScGaN alloy films: A combined experimental and theoretical study Experimental and theoretical results are presented regarding the incorporation of scandium into wurtzite GaN. Variation of the a and c lattice

  1. Unoccupied electronic structure of Ni2MnGa ferromagnetic shape memory alloy

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | DOE PAGES Accepted Manuscript: Unoccupied electronic structure of Ni2MnGa ferromagnetic shape memory alloy This content will become publicly available on August 20, 2016 « Prev Next » Title: Unoccupied electronic structure of Ni2MnGa ferromagnetic shape memory alloy Momentum resolved inverse photoemission spectroscopy measurements show that the dispersion of the unoccupied bands of Ni2MnGa is significant in the austenite phase. Furthermore, in the martensite phase, it

  2. Unoccupied electronic structure of Ni2MnGa ferromagnetic shape memory alloy

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Unoccupied electronic structure of Ni2MnGa ferromagnetic shape memory alloy Citation Details In-Document Search This content will become publicly available on August 20, 2016 Title: Unoccupied electronic structure of Ni2MnGa ferromagnetic shape memory alloy Momentum resolved inverse photoemission spectroscopy measurements show that the dispersion of the unoccupied bands of Ni2MnGa is significant in the austenite phase. Furthermore, in the martensite phase,

  3. Electron and hole gas in modulation-doped GaAs/Al{sub 1-x}Ga{sub x}As radial heterojunctions

    SciTech Connect (OSTI)

    Bertoni, Andrea; Royo, Miquel; Mahawish, Farah; Goldoni, Guido

    2011-11-15

    We perform self-consistent Schroedinger-Poisson calculations with exchange and correlation corrections to determine the electron and hole gas in a radial heterojunction formed in a GaAs/AlGaAs core-multi-shell nanowire, which is either n- or p-doped. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping density/gate potential. Contrary to planar heterojunctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between an isotropic, cylindrical distribution deep in the GaAs core (low doping) and a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface. At low doping, they present an additional localization pattern with six separated 2DEGs strips. The field generated by a back-gate may easily deform the electron or hole gas, breaking the sixfold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.

  4. Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application: Preprint

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, S. R.; Geisz, J. F.

    2002-05-01

    This conference paper describes the analysis of the potential of GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize three factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the old AM1.5 direct standard spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than {approx}75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-eV three-junction device.

  5. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

    SciTech Connect (OSTI)

    Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A.; Hollaender, B.; Heuken, M.

    2012-11-01

    Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

  6. OPTICAL AND NEAR-INFRARED POLARIMETRY OF HIGHLY REDDENED Type Ia SUPERNOVA 2014J: PECULIAR PROPERTIES OF DUST IN M82

    SciTech Connect (OSTI)

    Kawabata, K. S.; Akitaya, H.; Itoh, R.; Moritani, Y. [Hiroshima Astrophysical Science Center, Hiroshima University, Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526 (Japan); Yamanaka, M. [Department of Physics, Faculty of Science and Engineering, Konan University, Okamoto, Kobe, Hyogo 658-8501 (Japan); Maeda, K.; Nogami, D. [Department of Astronomy, Graduate School of Science, Kyoto University, Sakyo-ku, Kyoto 606-8502 (Japan); Ui, T.; Kawabata, M.; Mori, K.; Takaki, K.; Ueno, I.; Chiyonobu, S.; Harao, T.; Matsui, R.; Miyamoto, H.; Nagae, O. [Department of Physical Science, Hiroshima University, Kagamiyama, Higashi-Hiroshima 739-8526 (Japan); Nomoto, K.; Suzuki, N. [Kavli Institute for the Physics and Mathematics of the Universe (WPI), The University of Tokyo, Kashiwa, Chiba 277-8583 (Japan); Tanaka, M., E-mail: kawabtkj@hiroshima-u.ac.jp [National Astronomical Observatory of Japan, Osawa, Mitaka, Tokyo 181-8588 (Japan); and others

    2014-11-01

    We present optical and near-infrared multi-band linear polarimetry of the highly reddened Type Ia supernova (SN) 2014J that appeared in M82. SN 2014J exhibits large polarization at shorter wavelengths, e.g., 4.8% in the B band, which decreases rapidly at longer wavelengths, while the position angle of the polarization remains at approximately 40 over the observed wavelength range. These polarimetric properties suggest that the observed polarization is likely predominantly caused by the interstellar dust within M82. Further analysis shows that the polarization peaks at a wavelengths much shorter than those obtained for the Galactic dust. The wavelength dependence of the polarization can be better described by an inverse power law rather than by the Serkowski law for Galactic interstellar polarization. These points suggest that the nature of the dust in M82 may be different from that in our Galaxy, with polarizing dust grains having a mean radius of <0.1 ?m.

  7. Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory...

    Office of Scientific and Technical Information (OSTI)

    behavior in CoFeCrGa: Theory and Experiment This content will become publicly available on July 8, 2016 Title: Origin of spin gapless semiconductor behavior in ...

  8. Antimonide-Based Long-Wavelength Lasers on GaAs Substrates

    SciTech Connect (OSTI)

    KLEM,JOHN F.; Blum, O.

    2000-08-17

    We have investigated the use of GaAsSb in edge-emitting laser active regions, in order to obtain lasing near 1.3 {micro}m. Single quantum well GaAsSb devices display electroluminescence at wavelengths as long as 1.34 {micro}m, but substantial blueshifts occur under high injection conditions. GaAsSb single quantum well edge emitters have been obtained which lase at 1.275 {micro}m with a room-temperature threshold current density as low as 535 A/cm{sup 2}. Modification of the basic GaAsSb/GaAs structure with the addition of InGaAs layers results in a strongly type-II band alignment which can be used to further extend the emission wavelength of these devices. Using GaAsSb/InGaAs active regions, lasers emitting at 1.17 {micro}m have been obtained with room-temperature threshold current densities of 120 A/cm{sup 2}, and devices operating at 1.29 {micro}m have displayed thresholds as low as 375 A/cm{sup 2}. Characteristic temperatures for devices employing various GaAsSb-based active regions have been measured to be 60-73 K.

  9. Vacancy defects in as-grown and neutron irradiated GaP studied by positrons

    SciTech Connect (OSTI)

    Dlubek, G.; Bruemmer, O.; Polity, A.

    1986-08-18

    Positron lifetime and Doppler-broadening measurements have been used to study vacancy defects in n-italic-type GaP. Vacancies in the P sublattice with a concentration of some 10/sup 17/ cm/sup -3/ were observed in as-grwon GaP. The vacancies disappear during annealing at 500--800 /sup 0/C. In neutron-irradiated GaP positrons are trapped by Ga vacancies which anneal out in two stages situated at 300--550 /sup 0/C and 550--700 /sup 0/C.

  10. Structural defects in GaN revealed by Transmission Electron Microscopy

    SciTech Connect (OSTI)

    Liliental-Weber, Zuzanna

    2014-04-18

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  11. Relaxation of compressively strained AlGaN by inclined threading

    Office of Scientific and Technical Information (OSTI)

    dislocations. (Journal Article) | SciTech Connect Journal Article: Relaxation of compressively strained AlGaN by inclined threading dislocations. Citation Details In-Document Search Title: Relaxation of compressively strained AlGaN by inclined threading dislocations. Transmission electron microscopy and x-ray diffraction were used to assess the microstructure and strain of Al{sub x}Ga{sub 1?x}N(x = 0.61-0.64) layers grown on AlN. The compressively-strained AlGaN is partially relaxed by

  12. Enhanced conversion efficiency in wide-bandgap GaNP solar cells

    SciTech Connect (OSTI)

    Sukrittanon, Supanee; Liu, Ren; Ro, Yun Goo; Pan, Janet L.; Jungjohann, Katherine Leigh; Tu, Charles W.; Dayeh, Shadi A.

    2015-10-12

    In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, Eg –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher than other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.

  13. Interface Reactions and Electrical Characteristics of Au/GaSb Contacts

    SciTech Connect (OSTI)

    H. Ehsani; R.J. Gutmann; G.W. Charache

    2000-07-07

    The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

  14. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    SciTech Connect (OSTI)

    Velea, A.; Borca, C. N.; Grolimund, D.; Socol, G.; Galca, A. C.; Popescu, M.; Bokhoven, J. A. van

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  15. Structural defects in GaN revealed by Transmission Electron Microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liliental-Weber, Zuzanna

    2014-09-08

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  16. Enhanced conversion efficiency in wide-bandgap GaNP solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sukrittanon, Supanee; Liu, Ren; Ro, Yun Goo; Pan, Janet L.; Jungjohann, Katherine Leigh; Tu, Charles W.; Dayeh, Shadi A.

    2015-10-12

    In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, Eg –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher than othermore » solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.« less

  17. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  18. Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

    SciTech Connect (OSTI)

    Luan, Chongbiao; Lin, Zhaojun Zhao, Jingtao; Wang, Yutang; Lv, Yuanjie; Chen, Hong; Wang, Zhanguo

    2014-07-28

    The theoretical model of the polarization Coulomb field scattering (PCF) caused by the polarization charge density variation at the AlGaN/AlN interface in strained AlGaN/AlN/GaN heterostructure field-effect transistors has been developed. And the theoretical values for the electron drift mobility, which were calculated using the Matthiessen's rule that includes PCF, piezoelectric scattering, polar optical-phonon scattering, and interface roughness scattering, are in good agreement with our experimental values. Therefore, the theoretical model for PCF has been confirmed.

  19. A comparison of the structure and localized magnetism in Ce{sub 2}PdGa{sub 12} with the heavy fermion CePdGa{sub 6}

    SciTech Connect (OSTI)

    Macaluso, Robin T. [Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803 (United States); Millican, Jasmine N. [Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803 (United States); Nakatsuji, Satoru [Department of Physics, Kyoto University, Kyoto, Japan 606-8502 (Japan); Lee, Han-Oh [Department of Physics, University of California, Davis, CA 95616 (United States); Carter, B. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Moreno, Nelson O. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Fisk, Zachary [Department of Physics, University of California, Davis, CA 95616 (United States); Chan, Julia Y. [Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803 (United States)]. E-mail: jchan@lsu.edu

    2005-11-15

    Single crystals of Ce{sub 2}PdGa{sub 12} have been synthesized in Ga flux and characterized by X-ray diffraction. This compound crystallizes in the tetragonal P4/nbm space group, Z=2 with lattice parameters of a=6.1040(2)A and c=15.5490(6)A. It shows strongly anisotropic magnetism and orders antiferromagnetically at T{sub N}{approx}11K. A field-induced metamagnetic transition to the ferromagnetic state is observed below T{sub N}. Structure-property relationships with the related heavy-fermion antiferromagnet CePdGa{sub 6} are discussed.

  20. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

    SciTech Connect (OSTI)

    Piprek, Joachim

    2014-02-03

    This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.