Sample records for ga american recovery

  1. Weatherization Formula Grants - American Recovery and Reinvestment...

    Energy Savers [EERE]

    Weatherization Formula Grants - American Recovery and Reinvestment Act (ARRA) Weatherization Formula Grants - American Recovery and Reinvestment Act (ARRA) U.S. Department of...

  2. September 2010 American Recovery and

    E-Print Network [OSTI]

    Oak Ridge National Laboratory

    September 2010 i American Recovery and Reinvestment Act (ARRA) FEMP Technical Assistance U.S. Naval by applying GSHP systems. The current HVAC system for the building is a conventional Air Handling Unit (AHU) system with chiller. The heating and the DHW are provided by district steam. The building is close

  3. The American Recovery

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33Frequently AskedEnergyIssuesEnergy Solar Decathlon2001 Power PlantAPRIL 1, 2011TheAmerican

  4. American Recovery & Reinvestment Act, ARRA, clean energy projects...

    Energy Savers [EERE]

    American Recovery & Reinvestment Act, ARRA, clean energy projects, energy efficiency, smart grid, alternative fuels, geothermal energy American Recovery & Reinvestment Act, ARRA,...

  5. Audit Report: The Department of Energy's American Recovery and...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy's American Recovery and Reinvestment Act - California State Energy Program Audit Report: The Department of Energy's American Recovery and Reinvestment Act - California...

  6. Grant Guidance to Administer the American Recovery and Reinvestment...

    Broader source: Energy.gov (indexed) [DOE]

    PROGRAM NOTICE 10-10: REPROGRAMMING TRAINING AND TECHNICAL ASSISTANCE FUNDS TO PROGRAM OPERATIONS Weatherization Formula Grants - American Recovery and Reinvestment Act (ARRA)...

  7. Idaho Operations Office: American Recovery and Reinvestment Act Update

    ScienceCinema (OSTI)

    Provencher, Rick

    2012-06-14T23:59:59.000Z

    An update from Idaho National Laboratory, Rick Provencher addresses the progress that has been made due to the American Recovery and Reinvestment Act.

  8. Policy Flash 2014-35 Rescission of American Recovery and Reinvestment...

    Office of Environmental Management (EM)

    4-35 Rescission of American Recovery and Reinvestment Act Reporting Requirements. Policy Flash 2014-35 Rescission of American Recovery and Reinvestment Act Reporting Requirements....

  9. American Recovery and Reinvestment Act, Financial Assistance...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    - ARRAAttachment3.rtf FOIA Frequently Requested Documents: DE-EE0002884 Recovery Act - Integrated Algal Biorefinery (IABR) Financial Assistance Funding Opportunity Announcement...

  10. American Recovery and Reinvestment Act | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    imaging as well as next-generation oxygen-plasma assisted molecular beam epitaxy Microfluidics manipulation and manufacturing. Learn more detail about Recovery Act Instruments...

  11. Recovery Act State Memos American Samoa

    Energy Savers [EERE]

    Recovery Act funds to set up eight anemometers to measure and quantify the territory's wind potential. Award(s): 9.6 million, Energy Efficiency and Conservation Block Grant...

  12. CO-IMPLANTATION AND DRY-ETCH DAMAGE RECOVERY BY PLASMA NITRIDATION IN GaN

    E-Print Network [OSTI]

    Pearton, Stephen J.

    CO-IMPLANTATION AND DRY-ETCH DAMAGE RECOVERY BY PLASMA NITRIDATION IN GaN BY DONALD G. KENT III ............................................................................ x CHAPTERS 1 INTRODUCTION ................................................................. 1 1.1 GaN Applications ........................................................ 1 1.2 GaN Material Issues

  13. Track 8: Safety of Work Created Under the American Recovery and Reinvestment Act (ARRA)

    Broader source: Energy.gov [DOE]

    ISM Workshop Presentations Knoxville Convention Center, Knoxville, TN August 2009 Track 8: Safety of Work Created Under the American Recovery and Reinvestment Act (ARRA)

  14. State Energy Program Formula Grants- American Recovery and Reinvestment Act (ARRA)

    Broader source: Energy.gov [DOE]

    U.S. Department of Energy State Energy Program Formula Grants, funding for the states, energy efficiency and renewable energy, American Recovery and Reinvestment Act of 2009.

  15. American Recovery and Reinvestment Act of 2009: Bioenergy Technologies...

    Energy Savers [EERE]

    Recovery and Reinvestment Act of 2009 funds; the projects accelerate advanced biofuels RD&D, speed the deployment of commercialization of biofuels, and further the U.S....

  16. American Recovery and Reinvestment Act: What Does it Mean for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    independence Expands educational opportunities Preserves and improves affordable health care Provides tax relief and protects those in greatest need Puts Americans...

  17. American Recovery and Reinvestment Act of 2009 & NEPA

    Broader source: Energy.gov [DOE]

    Section 1609(c) requires a report to Congress on the status and progress of NEPA reviews for Recovery Act funded projects and activities. The President has assigned reporting responsibility to CEQ

  18. American Recovery and Reinvestment Act | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO Overview OCHCOSystemsProgram OverviewAdvocate - IssueAlpenaAmandaSHAmerican Recovery and

  19. American Recovery and Reinvestment Act | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO Overview OCHCOSystemsProgram OverviewAdvocate - IssueAlpenaAmandaSH CoatingsAmerican

  20. American Recovery & Reinvestment Act Newsletter - Issue 1

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613Portsmouth SitePresentations |StateNuclear EnergyofEnergyPowerAmerican Nuclearof1 1

  1. American Recovery and Reinvestment Act of 2009: Bioenergy Technologies

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the YouTube platform is alwaysISOSource Heat PumpAllegationsEnergyofAmerican

  2. American Recovery & Reinvestment Act Newsletter July 2010

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041cloth DocumentationProductsAlternative FuelsSanta Fe MetroWeinbergAmerican PhysicalExpertise

  3. American Recovery and Reinvestment Act of 2009: Summary of Provisions (released in AEO2010)

    Reports and Publications (EIA)

    2010-01-01T23:59:59.000Z

    The American Recovery and Reinvestment Act of 2009 (ARRA), signed into law in mid-February 2009, provides significant new federal funding, loan guarantees, and tax credits to stimulate investments in energy efficiency and renewable energy. The provisions of ARRA were incorporated initially as part of a revision to the Annual Energy Outlook 2009 Reference case that was released in April 2009, and they also are included in Annual Energy Outlook 2010.

  4. Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J.; Takamoto, T. [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan); Ikeda, E.; Kurita, H. [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)

    1997-03-01T23:59:59.000Z

    The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}

  5. American Recovery and Reinvestment Act (ARRA) FEMP Technical Assistance

    SciTech Connect (OSTI)

    Robert P. Breckenridge; Thomas R. Wood

    2010-08-01T23:59:59.000Z

    The purpose of this document is to evaluate the opportunity for Letterkenny Army Depot (LEAD or the Depot) to utilize biogenic methane, which may be available in shale formations under the Depot, to provide a supplemental source of natural gas that could allow the Depot to increase energy independence. Both the Director and Deputy of Public Works at the Depot are supportive in general of a methane production project, but wanted to better understand the challenges prior to embarking on such a project. This report will cover many of these issues. A similar project has been successfully developed by the U. S. Army at Ft. Knox, KY, which will be explained and referred to throughout this report as a backdrop to discussing the challenges and opportunities at LEAD, because the geologic formations and possibilities at both sites are similar. Prior to discussing the opportunity at LEAD, it is important to briefly discuss the successful methane recovery operation at Ft. Knox, because it is applicable to the projected approach for the LEAD methane system. The Ft. Knox project is an excellent example of how the U. S. Army can use an onsite renewable resource to provide a secure energy source that is not dependent on regional energy networks and foreign oil. At Ft. Knox, the U. S. Army contracted (through a utility co-op) with an energy production company to drill wells, establish a distribution infrastructure, and provide the equipment needed to prepare and compress the produced methane gas for use by base operations. The energy production company agreed to conduct the exploratory investigation at Ft. Knox with no cost to the government, as long as they could be granted a long-term contract if a reliable energy resource was established. The Depot is located, in part, over an Ordovician Age shale formation that may have the potential for producing biogenic methane, similar to the Devonian Age shale found beneath Ft. Knox. However, the Ordovician Age Shale beneath the Letterkenny Depot is not known to have any currently producing gas wells.

  6. Waste Heat Doesn't Have to be a Waste of Money- The American & Efird Heat Recovery Project: A First for the Textile Industry 

    E-Print Network [OSTI]

    Smith, S. W.

    1991-01-01T23:59:59.000Z

    In 1989 American & Efird, Inc., decided to upgrade their heat recovery system at its Dyeing & Finishing Plant in Mt. Holly, North Carolina. They chose an electric industrial process heat pump to enhance heat recovery and to lower operating costs...

  7. Audit Report on "The Department of Energy's American Recovery and Reinvestment Act -- Florida State Energy Program"

    SciTech Connect (OSTI)

    None

    2010-06-01T23:59:59.000Z

    The Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) provides grants to states, territories, and the District of Columbia to support their energy priorities through the State Energy Program (SEP). The SEP provides Federal financial assistance to carry out energy efficiency and renewable energy projects that meet each state's unique energy needs while also addressing national goals such as energy security. Federal funding is based on a grant formula that takes into account population and energy consumption. The SEP emphasizes the state's role as the decision maker and administrator for the program. The American Recovery and Reinvestment Act of 2009 (Recovery Act) expanded the SEP, authorizing $3.1 billion in grants. Based on existing grant formulas and after reviewing state-level plans, EERE made awards to states. The State of Florida's Energy Office (Florida) was allocated $126 million - a 90-fold increase over Florida's average annual SEP grant of $1.4 million. Per the Recovery Act, this funding must be obligated by September 30, 2010, and spent by April 30, 2012. As of March 10, 2010, Florida had expended $13.2 million of the SEP Recovery Act funds. Florida planned to use its grant funds to undertake activities that would preserve and create jobs; save energy; increase renewable energy sources; and, reduce greenhouse gas emissions. To accomplish Recovery Act objectives, states could either fund new or expand existing projects. As a condition of the awards, EERE required states to develop and implement sound internal controls over the use of Recovery Act funds. Based on the significant increase in funding from the Recovery Act, we initiated this review to determine whether Florida had internal controls in place to provide assurance that the goals of the SEP and Recovery Act will be met and accomplished efficiently and effectively. We identified weaknesses in the implementation of SEP Recovery Act projects that have adversely impacted Florida's ability to meet the goals of the SEP and the Recovery Act. Specifically: (1) Florida used about $8.3 million to pay for activities that did not meet the intent of the Recovery Act to create new or save existing jobs. With the approval of the Department, Florida used these funds to pay for rebates related to solar energy projects that had been completed prior to passage of the Recovery Act; (2) State officials did not meet Florida's program goals to obligate all Recovery Act funds by January 1, 2010, thus delaying projects and preventing them from achieving the desired stimulative economic impact. Obligations were delayed because Florida officials selected a number of projects that either required a lengthy review and approval process or were specifically prohibited. In June 2009, the Department notified Florida that a number of projects would not be approved; however, as of April 1, 2010, the State had not acted to name replacement projects or move funds to other projects; (3) Florida officials had not ensured that 7 of the 18 award requirements for Recovery Act funding promulgated by the Department had been passed down to sub-recipients of the award, as required; and, (4) Certain internal control weaknesses that could jeopardize the program and increase the risk of fraud, waste and abuse were identified in the Solar Energy System Incentives Program during our September 2009 visit to Florida. These included a lack of separation of duties related to the processing of rebates and deficiencies in the written procedures for grant managers to review and approve rebates. From a forward looking perspective, absent aggressive corrective action, these weaknesses threaten Florida's efforts to meet future Recovery Act goals. In response to our review, Florida took corrective action to incorporate the additional award requirements in sub-recipient documents. It also instituted additional controls to correct the internal control weaknesses we identified. More, however, needs to be done with respect to Department oversight. This report details the circumstances sur

  8. Special Report "The American Recovery and Reinvestment Act and the Department of Energy"

    SciTech Connect (OSTI)

    None

    2009-03-01T23:59:59.000Z

    The American Recovery and Reinvestment Act of 2009 (Recovery Act) was signed into law on February 17, 2009, as a way to jumpstart the U.S. economy, create or save millions of jobs, spur technological advances in science and health, and invest in the Nation's energy future. This national effort will require an unprecedented level of transparency and accountability to ensure that U.S. citizens know where their tax dollars are going and how they are being spent. As part of the Recovery Act, the Department of Energy will receive more than $38 billion to support a number of science, energy, and environmental initiatives. Additionally, the Department's authority to make or guarantee energy-related loans has increased to about $127 billion. The Department plans to disburse the vast majority of the funds it receives through grants, cooperative agreements, contracts, and other financial instruments. The supplemental funding provided to the Department of Energy under the Recovery Act dwarfs the Department's annual budget of about $27 billion. The infusion of these funds and the corresponding increase in effort required to ensure that they are properly controlled and disbursed in a timely manner will, without doubt, strain existing resources. It will also have an equally challenging impact on the inherent risks associated with operating the Department's sizable portfolio of missions and activities and, this is complicated by the fact that, in many respects, the Recovery Act requirements represent a fundamental transformation of the Department's mission. If these challenges are to be met successfully, all levels of the Department's structure and its many constituents, including the existing contractor community; the national laboratory system; state and local governments; community action groups and literally thousands of other contract, grant, loan and cooperative agreement recipients throughout the Nation will have to strengthen existing or design new controls to safeguard Recovery Act funds.

  9. American Recovery and Reinvestment Act of 2009 (ARRA) Cost Share: Alternative and Renewable Fuel and Vehicle Technology Program.

    E-Print Network [OSTI]

    and other matching funds instead of federal dollars, does this exclude us from the process? Will the Energy and Renewable Fuel and Vehicle Technology Program. Questions and Answers as of 4/27/09 1 1) Our county is working on a joint proposal for American Recovery and Reinvestment Act (ARRA) funds with other agencies

  10. Proposed Guideline Clarifications for American Recovery and Reinvestment Act of 2009

    E-Print Network [OSTI]

    Wilde, Erik; Kansa, Eric C; Yee, Raymond

    2009-01-01T23:59:59.000Z

    th align="right" valign="top">CFDA: Design Recovery> 1642990396473 CFDA>2004031CFDA> CFDA-title>Design Recovery Transparency

  11. Savannah River Site Footprint Reduction Results under the American Recovery and Reinvestment Act - 13302

    SciTech Connect (OSTI)

    Flora, Mary [Savannah River Nuclear Solutions Bldg. 730-4B, Aiken, SC 29808 (United States)] [Savannah River Nuclear Solutions Bldg. 730-4B, Aiken, SC 29808 (United States); Adams, Angelia [United States Department of Energy Bldg. 730-B, Aiken, SC 29808 (United States)] [United States Department of Energy Bldg. 730-B, Aiken, SC 29808 (United States); Pope, Robert [United States Environmental Protection Agency Region IV Atlanta, GA 30303 (United States)] [United States Environmental Protection Agency Region IV Atlanta, GA 30303 (United States)

    2013-07-01T23:59:59.000Z

    The Savannah River Site (SRS) is an 802 square-kilometer United States Department of Energy (US DOE) nuclear facility located along the Savannah River near Aiken, South Carolina, managed and operated by Savannah River Nuclear Solutions. Construction of SRS began in the early 1950's to enhance the nation's nuclear weapons capability. Nuclear weapons material production began in the early 1950's, eventually utilizing five production reactors constructed to support the national defense mission. Past operations have resulted in releases of hazardous constituents and substances to soil and groundwater, resulting in 515 waste sites with contamination exceeding regulatory thresholds. More than 1,000 facilities were constructed onsite with approximately 300 of them considered radiological, nuclear or industrial in nature. In 2003, SRS entered into a Memorandum of Agreement with its regulators to accelerate the cleanup using an Area Completion strategy. The strategy was designed to focus cleanup efforts on the 14 large industrial areas of the site to realize efficiencies of scale in the characterization, assessment, and remediation activities. This strategy focuses on addressing the contaminated surface units and the vadose zone and addressing groundwater plumes subsequently. This approach streamlines characterization and remediation efforts as well as the required regulatory documentation, while enhancing the ability to make large-scale cleanup decisions. In February 2009, Congress approved the American Reinvestment and Recovery Act (ARRA) to create jobs and promote economic recovery. At SRS, ARRA funding was established in part to accelerate the completion of environmental remediation and facility deactivation and decommissioning (D and D). By late 2012, SRS achieved 85 percent footprint reduction utilizing ARRA funding by accelerating and coupling waste unit remediation with D and D of remnant facilities. Facility D and D activities were sequenced and permitted with waste unit remediation activities to streamline regulatory approval and execution. Achieving footprint reduction fulfills the Government's responsibility to address legacy contamination; allows earlier completion of legally enforceable compliance agreement milestones; and enables future potential reuse of DOE resources, including land and infrastructure for other missions. Over the last 3.5 years significant achievements were met that contributed to footprint reduction, including the closure of 41 waste units (including 20 miles of radiologically contaminated stream) and decommissioning of 30 facilities (including the precedent setting in situ closure of two former production reactors, the first in the DOE Complex). Other notable achievements included the removal of over 39,750 cubic meters of debris and 68,810 cubic meters of contaminated soils, including 9175 cubic meters of lead-contaminated soil from a former site small arms testing range and treatment of 1,262 cubic meters of tritium-laden soils and concrete using a thermal treatment system. (authors)

  12. INFORMATION: Special Report on "Selected Department of Energy Program Efforts to Implement the American Recovery and Reinvestment Act"

    SciTech Connect (OSTI)

    None

    2009-12-01T23:59:59.000Z

    The American Recovery and Reinvestment Act of 2009 (Recovery Act) was enacted on February 17, 2009, to jumpstart the economy by creating or saving millions of jobs, spurring technological advances in health and science, and investing in the Nation's energy future. The Department of Energy received over $32.7 billion in Recovery Act funding for various science, energy, and environmental programs and initiatives. As of November 2009, the Department had obligated $18.3 billion of the Recovery Act funding, but only $1.4 billion had been spent. The Department's Offices of Energy Efficiency and Renewable Energy, Fossil Energy, Environmental Management, Science, and Electricity Delivery and Energy Reliability received the majority of funding allocated to the Department, about $32.3 billion. Obligating these funds by the end of Fiscal Year 2010, as required by the Recovery Act, and overseeing their effective use in succeeding years, represents a massive workload increase for the Department's programs. The effort to date has strained existing resources. As has been widely acknowledged, any effort to disburse massive additional funding and to expeditiously initiate and complete projects increases the risk of fraud, waste and abuse. It is, therefore, important for the Department's program offices to assess and mitigate these risks to the maximum extent practicable. In this light, we initiated this review as an initial step in the Office of Inspector General's charge to determine whether the Department's major program offices had developed an effective approach for identifying and mitigating risks related to achieving the goals and objectives of the Recovery Act. The Department's program offices included in our review identified risks and planned mitigation strategies that, if successfully implemented and executed, should help achieve the goals and objectives of the Recovery Act. While each office identified risks unique to its respective areas of responsibility, there were a number of risks shared in common. These included the mechanical and substantive requirements related to the award and distribution of funds; program and project performance monitoring; and, program and project execution activities. In particular, the offices self-identified common risks such as: (1) The inability to award and distribute funds in a timely manner to achieve the goals of the Recovery Act; (2) The sufficiency of monitoring procedures and resources to, among other things, prevent and detect fraud, waste and abuse throughout the performance period of financial assistance awards and contracts; and (3) The inherent cost, schedule and performance risks associated with first-of-a-kind, innovative research and demonstration projects. Our review confirmed that the Department had begun to implement a number of strategies designed to mitigate these and other program-specific risks. Our testing, however, identified challenges to the effective implementation of these mitigation strategies that need to be addressed if the Department is to meet the goals and objectives established by the Recovery Act. At the time of our review: (1) Program staffing resources, critical to the success of all other mitigation strategies, remained inadequate both in numbers and qualifications (certifications and training) for positions in procurement and acquisition, project management, and monitoring and oversight functions; (2) Performance measures for achieving Recovery Act goals such as distributing funds in an expeditious manner had not always been established and included in performance plans, and, in financial assistance and contract documents; and (3) Programs had not consistently demonstrated that previously reported deficiencies, identified through audits, inspections, investigations and other oversight activities, had been considered in designing mitigation strategies for the Recovery Act related risks. As we noted in our Special Report on the American Recovery and Reinvestment Act at the Department of Energy (OAS-RA-09-01, March 2009) these sorts of deficiencies, which w

  13. Audit Report on "Management Controls over the Department of Energy's American Recovery and Reinvestment Act - Louisiana State Energy Program"

    SciTech Connect (OSTI)

    None

    2010-05-01T23:59:59.000Z

    The Department of Energy's (Department) Office of Energy Efficiency and Renewable Energy (EERE) provides grants to states, territories and the District of Columbia (states) to support their energy priorities through the State Energy Program (SEP). Federal funding is based on a grant formula that considers the population and energy consumption in each state, and amounted to $25 million for Fiscal Year (FY) 2009. The American Recovery and Reinvestment Act of 2009 (Recovery Act) expanded the SEP by authorizing an additional $3.1 billion to states using the existing grant formula. EERE made grant awards to states after reviewing plans that summarize the activities states will undertake to achieve SEP Recovery Act objectives, including preserving and creating jobs; saving energy; increasing renewable energy sources; and, reducing greenhouse gas emissions. EERE program guidance emphasizes that states are responsible for administering SEP within each state, and requires each state to implement internal controls over the use of Recovery Act funds. The State of Louisiana received $71.6 million in SEP Recovery Act funds; a 164-fold increase over its FY 2009 SEP grant of $437,000. As part of the Office of Inspector General's strategy for reviewing the Department's implementation of the Recovery Act, we initiated this review to determine whether the Louisiana State Energy Office had internal controls in place to efficiently and effectively administer Recovery Act funds provided for its SEP program. Louisiana developed a strategy for SEP Recovery Act funding that focused on improving energy efficiency in state buildings, housing and small businesses; increasing Energy Star appliance rebates; and, expanding the use of alternative fuels and renewable energy. Due to a statewide hiring freeze, Louisiana outsourced management of the majority of its projects ($63.3 million) to one general contractor. Louisiana plans to internally manage one project, Education and Outreach ($2.6 million). The remaining funds are allocated to program specific management expenses, including the contractor's fee, a monitoring contract, and Louisiana's payroll expenses ($5.7 million). Louisiana formally approved the general contractor in February 2010. State officials plan to initiate a separate consulting contract for monitoring, verifying and auditing expenditures, energy savings and other metrics as required by EERE for Recovery Act funding.

  14. FINAL TECHNICAL REPORT AMERICAN RECOVERY AND REINVESTMENT ACT NORTH FORK SKOKOMISH POWERHOUSE AT CUSHMAN NO. 2 DAM

    SciTech Connect (OSTI)

    Fischer, Steve; Wilson, Matthew

    2013-09-30T23:59:59.000Z

    The objective of this project was to add generating capacity on an in-stream flow release at Tacoma Power's Cushman hydroelectric project, Cushman No. 2 Dam, FERC Project P-460. The flow that is being used to generate additional electricity was being discharged from a valve at the base of the dam without recovery of the energy. A second objective to the project was to incorporate upstream fish passage by use of a fish collection structure attached to the draft tubes of the hydroelectric units. This will enable reintroduction of native anadromous fish above the dams which have blocked fish passage since the late 1920's. The project was funded in part by the American Recovery and Reinvestment Act through the Department of Energy, Office of Energy, Efficiency and Renewable Energy, Wind and Water Power Program.

  15. Waste Heat Doesn't Have to be a Waste of Money- The American & Efird Heat Recovery Project: A First for the Textile Industry

    E-Print Network [OSTI]

    Smith, S. W.

    "WASTE HEAT DOESN'T HAVE TO BE A WASTE OF MONEY" THE AMERICAN & EFIRD HEAT RECOVERY PROJECT: A FIRST FOR THE TEXTILE INDUSTRY STEVE W. SMITH, P.E., Program Manager Electrotechnology Sales Duke Power Company Charlotte, NC In 1989 American... and finishing Finishing Plant was targeted as an ideal operations recover energy from their site for a process heat pump installation. wastewater discharges usjng shell and tube Over a three year period, 1987-1990, Duke heat exchangers and preheat incoming...

  16. Recovery Act State Memos Kentucky

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    * KENTUCKY RECOVERY ACT SNAPSHOT Kentucky has substantial natural resources, including coal, oil, gas, and hydroelectric power. The American Recovery & Reinvestment Act (ARRA)...

  17. Minority-carrier injection-enhanced annealing of radiation damage to InGaP solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)

    1997-04-01T23:59:59.000Z

    The observation of minority-carrier injection-enhanced annealing of radiation-induced defects in InGaP is reported. 1-MeV electron irradiation results demonstrate superior radiation-resistance of InGa{sub 0.5}P{sub 0.5} solar cells compared to GaAs-on-Ge cells. Moreover, minority-carrier injection under forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP solar cell properties. These results suggest that the radiation-resistance of InGaP-based devices such as InGaP/GaAs(/Ge) multijunction solar cells and InGaP(As) light-emitting devices is further improved under minority-carrier injection condition. {copyright} {ital 1997 American Institute of Physics.}

  18. Recovery Act Funds at Work

    Broader source: Energy.gov [DOE]

    Funds from the American Recovery and Reinvestment Act of 2009 (Recovery Act) are being put to work to improve safety, reliability, and service in systems across the country. Here are case studies from a variety of Recovery Act programs.

  19. Special Report on The Department of Energy's Acquisition Workforce and its Impact on Implementation of the American Recovery and Reinvestment Act of 2009

    SciTech Connect (OSTI)

    None

    2009-03-01T23:59:59.000Z

    Signed by the President on February 17, 2009, the American Recovery and Reinvestment Act of 2009 (Recovery Act) seeks to strengthen the U.S. economy through the creation of new jobs, aiding State and local governments with budget shortfalls, and investing in the long-term health of the Nation's economic prosperity. Under the Recovery Act, the Department of Energy will receive approximately $40 billion for various energy, environmental, and science programs and initiatives. To have an immediate stimulative impact on the U.S. economy, the Department's stated goal is to ensure that these funds are spent as expeditiously as possible, without risking transparency and accountability. Given the Department's almost total reliance on the acquisition process (contracts, grants, cooperative agreements, etc.) to carry out its mission, enhanced focus on contract administration and, specifically, the work performed by Federal acquisition officials is of vital importance as the unprecedented flow of funds begins under the Recovery Act.

  20. Recovery Act Milestones

    ScienceCinema (OSTI)

    Rogers, Matt

    2013-05-29T23:59:59.000Z

    Every 100 days, the Department of Energy is held accountable for a progress report on the American Recovery and Reinvestment Act. Update at 200 days, hosted by Matt Rogers, Senior Advisor to Secretary Steven Chu for Recovery Act Implementation.

  1. Recovery Act Project Stories

    Broader source: Energy.gov [DOE]

    Funded by the American Recovery and Reinvestment Act, these Federal Energy Management Program (FEMP) projects exemplify the range of technical assistance provided to federal agencies.

  2. American Recovery and Reinvestment Act of 2009 CSP Awards | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny: The Future of1Albuquerque, NM -Alicia MoultonPassEnergyAmericanRICHLAND,

  3. CALIFORNIA RECOVERY ACT SNAPSHOT | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    RECOVERY ACT SNAPSHOT California has substantial natural resources, including oil, gas, solar, wind, geothermal, and hydroelectric power .The American Recovery & Reinvestment...

  4. ARKANSAS RECOVERY ACT SNAPSHOT | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ARKANSAS RECOVERY ACT SNAPSHOT Arkansas has substantial natural resources, including gas, oil, wind, biomass, and hydroelectric power. The American Recovery & Reinvestment Act...

  5. IOWA RECOVERY ACT SNAPSHOT | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    IOWA RECOVERY ACT SNAPSHOT Iowa has substantial natural resources, including wind power and is the largest ethanol producer in the United States. The American Recovery &...

  6. Special Report on the "Department of Energy's Efforts to Meet Accountability and Performance Reporting Objectives of the American Recovery and Reinvestment Act"

    SciTech Connect (OSTI)

    None

    2009-09-01T23:59:59.000Z

    The purpose of the American Recovery and Reinvestment Act of 2009 (Recovery Act) was to jumpstart the U.S. economy, create or save millions of jobs, spur technological advances in health and science, and invest in the Nation's energy future. The Department of Energy will receive an unprecedented $38 billion in Recovery Act funding to support a variety of science, energy, and environmental initiatives. The Recovery Act requires transparency and accountability over these funds. To this end, the Office of Management and Budget (OMB) issued guidance requiring the Department to compile and report a wide variety of funding, accounting, and performance information. The Department plans to leverage existing information systems to develop accounting and performance information that will be used by program managers and ultimately reported to Recovery.gov, the government-wide source of Recovery Act information, and to OMB. The Department's iManage iPortal, a system that aggregates information from a number of corporate systems, will serve as the main reporting gateway for accounting information. In addition, the Department plans to implement a methodology or system that will permit it to monitor information reported directly to OMB by prime funding recipients. Furthermore, performance measures or metrics that outline expected outcomes are being developed, with results ultimately to be reported in a recently developed Department-wide system. Because of the significance of funds provided and their importance to strengthening the Nation's economy, we initiated this review to determine whether the Department had taken the steps necessary to ensure that Recovery Act funds can be appropriately tracked and are transparent to the public, and whether the benefits of the expenditures can be properly measured and reported clearly, accurately, and in a timely manner. Although not yet fully mature, we found that the Department's efforts to develop, refine, and apply the control structure needed to ensure accurate, timely, and reliable reporting to be both proactive and positive. We did, however, identify certain issues relating to Recovery Act performance management, accounting and reporting accuracy, and timeliness that should be addressed and resolved. In particular, at the time of our review: (1) Program officials had not yet determined whether existing information systems will be able to process anticipated transaction increases associated with the Recovery Act; (2) System modifications made to the Department's performance management system to accommodate Recovery Act performance measures had not yet been fully tested and verified; (3) The ability of prime and sub-recipients to properly segregate and report both accounting and performance information had not been determined; (4) There was a lack of coordination between Headquarters organizations related to aspects of Recovery Act reporting. For example, we observed that the Offices of Fossil Energy and Program, Analysis and Evaluation were both involved in developing job creation estimates that could yield significantly different results; and, (5) A significant portion (91 of 142, or 64 percent) of the performance measures developed for the Recovery Act activities were not quantifiable. In some instances, Project Operating Plans had not been finalized and we were not able to verify that all needed performance measures had been developed. Furthermore, the Department had not developed specific metrics to measure federal and contractor jobs creation and retention, an essential Recovery Act objective. The Department had devoted a great deal of time and resources to identifying and mitigating Recovery Act-related risks. For example, the Department developed a risk assessment tool that is intended to assist programs in identifying risks that can prevent its Recovery Act projects from meeting their intended goals. We also found that program staff and management officials at multiple levels were actively engaged in designing Recovery Act-related control and accountability programs. These efforts ra

  7. American Recovery and Reinvestment Act (ARRA) Federal Energy Management Program Technical Assistance Project 282 Renewable Energy Opportunities at Fort Gordon, Georgia

    SciTech Connect (OSTI)

    Boyd, Brian K.; Gorrissen, Willy J.; Hand, James R.; Horner, Jacob A.; Orrell, Alice C.; Russo, Bryan J.; Weimar, Mark R.; Williamson, Jennifer L.; Nesse, Ronald J.

    2010-09-30T23:59:59.000Z

    This document provides an overview of renewable resource potential at Fort Gordon, based primarily upon analysis of secondary data sources supplemented with limited on-site evaluations. This effort focuses on grid-connected generation of electricity from renewable energy sources and also on ground source heat pumps for heating and cooling buildings. The effort was funded by the American Recovery and Reinvestment Act (ARRA) as follow-on to the 2005 Department of Defense (DoD) Renewables Assessment. The site visit to Fort Gordon took place on March 9, 2010.

  8. Preliminary Audit Report on "Management Controls over the Commonwealth of Virginia's Efforts to Implement the American Recovery and Reinvestment Act Weatherization Assistance Program"

    SciTech Connect (OSTI)

    None

    2010-05-01T23:59:59.000Z

    The Department of Energy's (Department) Weatherization Assistance Program received $5 billion under the American Recovery and Reinvestment Act of 2009 (Recovery Act) to improve the energy efficiency of homes, multi-family rental units and mobile homes owned or occupied by low-income persons. Subsequently, the Department awarded a three-year Weatherization Assistance Program grant for $94 million to the Commonwealth of Virginia (Virginia). This grant provided more than a ten-fold increase in funds available to Virginia for weatherization over that authorized in Fiscal Year (FY) 2009. Corresponding to the increase in funding, the Recovery Act increased the limit on the average amount spent to weatherize a home (unit) from $2,500 to $6,500. Virginia's Department of Housing and Community Development (DHCD) administers the Recovery Act grant through 22 local community action agencies. These agencies (sub-grantees) are responsible for determining applicant eligibility, weatherizing homes, and conducting home assessments and inspections. Typical weatherization services include installing insulation; sealing ducts; tuning and repairing furnaces; and, mitigating heat loss through windows, doors and other infiltration points. Virginia plans to use its Recovery Act Weatherization funding to weatherize about 9,193 units over the life of the grant - a significant increase over the 1,475 housing units that were planned to be completed in FY 2009. Given the significant increase in funding and the demands associated with weatherizing thousands of homes, we initiated this audit to determine if Virginia had adequate safeguards in place to ensure that the Weatherization Program was managed efficiently and effectively. The State of Virginia's DHCD had not implemented financial and reporting controls needed to ensure Weatherization Program funds are spent effectively and efficiently. Specifically, DHCD had not: (1) Performed on-site financial monitoring of any of its sub-grantees under the Recovery Act; (2) Reviewed documentation supporting sub-grantee requests for reimbursements to verify the accuracy of amounts charged; (3) Periodically reconciled amounts paid to sub-grantees to the actual cost to weatherize units; (4) Maintained vehicle and equipment inventories as required by Federal regulations and state and Federal program directives; and (5) Accurately reported Weatherization Program results to the Department. Exacerbating weaknesses in DHCD's financial controls, the Department's most recent program monitoring visit to Virginia, made in 2008 before passage of the Recovery Act, did not include a required financial review. Hence, the financial control weaknesses discussed above were not detected and had not been addressed. As described in this report, these control and reporting weaknesses increase the risk that Recovery Act objectives may not be achieved and that fraud, waste or abuse can occur and not be detected in this critically important program.

  9. INFORMATION: Audit Report on "Accounting and Reporting for the American Recovery and Reinvestment Act by the Department of Energy's Funding Recipients"

    SciTech Connect (OSTI)

    None

    2010-04-01T23:59:59.000Z

    The American Recovery and Reinvestment Act of 2009 (Recovery Act) was established to jumpstart the U.S. economy, create or save millions of jobs, and invest in the Nation's energy future. The Department of Energy received approximately $37 billion through the Recovery Act to support a variety of science, energy and environmental initiatives. The Office of Management and Budget (OMB) issued guidance for carrying out stimulus-related activities which requires, among other things, that recipients ensure funds provided by the Recovery Act are clearly distinguishable from non-Recovery Act funds in all reporting systems and that recipients' actions are transparent to the public. To meet these requirements, the Department's recipients must clearly and accurately track and report on 18 separate data elements. In addition, the Department was to develop and implement a process to ensure that recipient information reported to the public was free from material omissions and significant reporting errors. Our recent report (OAS-RA-10-01, October 2009) noted that the Department had developed a quality assurance process to facilitate the quarterly reviews of recipient data and planned to test it during the first quarterly reporting cycle. To determine whether the Department's quality assurance process was effective, we examined information reported by recipients of Departmental funding as of September 30, 2009. We also sought to determine whether the Department's prime contractors were prepared to track and report on Recovery Act activities. The Department had taken a number of actions designed to ensure the accuracy and transparency of reported Recovery Act results. This process identified potential anomalies with information reported by 1,113 of 2,038, or 55 percent of recipients. We view the Department's data quality assurance efforts as both timely and significant. As noted by our audit testing, however, opportunities exist to strengthen the process. In particular: (1) Site officials did not always ensure that anomalies, once identified during the quality assurance process, were actually resolved. For example, the Department's process identified that about 740 of the approximately 10,000 jobs reported in the first quarter of Fiscal Year 2010 as created/retained were for projects reported as having no funds spent. Although these problems were referred to site officials for follow-up and/or correction, the information was never actually changed; (2) The Department did not always utilize the correct basis when evaluating the accuracy of 'funds provided' data submitted by grant recipients. For example, in its analysis process, the Department used data reflecting 'funds obligated' rather than the correct amount of 'total grant awards'. This generated a number of potential false positives; and, (3) Duplicate reports by certain recipients, resulting in overstatements of as much as $137 million of the more than $18 billion obligated, were not corrected. We observed that the Department had taken prompt action to ensure that its prime facility management contractors could properly report Recovery Act information. Notably, the seven contractors in this category included in our review had modified their accounting systems, as necessary, to ensure that they could accurately track and report on Recovery Act activities. The systems at each of these entities had been restructured so that they: (i) could separate Recovery Act and non-Recovery Act funds; and, (ii) had adequate processing capacity to handle the projected increase in transactions. We found the Department's decision to limit its reviews to the four elements that it considered to be critical (award amount, invoiced amount, jobs created/retained, and project status) to be reasonable. We concluded, however, other elements or dependent relationships should not be completely excluded from review. Beyond its initial development and implementation of its quality assurance process, the Department had taken steps to improve its ability to ensure that Recovery Act information was both accurate an

  10. Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

    E-Print Network [OSTI]

    Coldren, Larry A.

    Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system Erik J InGaAs/InGaAsP/InGaP material system. © 2005 American Institute of Physics. DOI: 10 of achieving QWI in such active regions.3,4 However, InGaAs/InGaAsP/InGaP-based de- vices offer numerous

  11. SUPPLEMENT TO THE THIRD QUARTERLY REPORT ON THE ECONOMIC IMPACT OF THE AMERICAN RECOVERY AND REINVESTMENT ACT OF 2009 THE ARRA AND THE CLEAN ENERGY TRANSFORMATION

    E-Print Network [OSTI]

    Council Of Economic Advisers

    2010-01-01T23:59:59.000Z

    A central piece of the American Recovery and Reinvestment Act of 2009 (ARRA) is more than $90 billion in government investment and tax incentives to lay the foundation for the clean energy economy of the future. As discussed in CEA’s Second Quarterly Report on the impact of the ARRA, this investment will help create a new generation of jobs, reduce dependence on oil, enhance national security, and improve the environment. 1 Ultimately, the investments could help transform the United States into a global clean energy leader. The ARRA clean energy investments are also providing crucial stimulus to the economy. Through programs such as enhanced tax credits for homeowners who make energy-efficient improvements, funding for research into new clean energy technologies, or grants to qualifying businesses, these investments are generating economic activity and creating new employment opportunities. This supplement to the CEA’s Third Quarterly Report updates our estimates of the effect of the ARRA’s clean energy provisions on economic recovery through the first quarter of 2010. We find that the Recovery Act directly created more than 80,000 clean energy jobs in the first quarter of 2010, and that the clean energy investments supported an additional 20,000

  12. Special Report on Review of "The Department of Energy's Quality Assurance Process for Prime Recipients' Reporting for the American Recovery and Reinvestment Act"

    SciTech Connect (OSTI)

    None

    2009-10-01T23:59:59.000Z

    The American Recovery and Reinvestment Act of 2009 (Recovery Act) was established to jumpstart the U.S. economy, create or save millions of jobs, spur technological advances in health and science, and invest in the Nation's energy future. The Department of Energy (Department) will receive an unprecedented $37 billion in Recovery Act funding to support a variety of science, energy, and environmental initiatives. The majority of the funding received by the Department will be allocated to various recipients through grants, cooperative agreements, contracts, and other financial instruments. To ensure transparency and accountability, the Office of Management and Budget (OMB) requires that recipients report on their receipt and use of Recovery Act funds on a quarterly basis to FederalReporting.gov. OMB also specifies that Federal agencies should develop and implement formal procedures to help ensure the quality of recipient reported information. Data that must be reported by recipients includes total funding received; funds expended or obligated; projects or activities for which funds were obligated or expended; and the number of jobs created and/or retained. OMB requires that Federal agencies perform limited data quality reviews of recipient data to identify material omissions and/or significant reporting errors and notify the recipients of the need to make appropriate and timely changes to erroneous reports. As part of a larger audit of recipient Recovery Act reporting and performance measurement and in support of a Government-wide review sponsored by the Recovery Accountability and Transparency Board, we completed an interim review to determine whether the Department had established a process to ensure the quality and accuracy of recipient reports. Our review revealed that the Department had developed a quality assurance process to facilitate the quarterly reviews of recipient data. The process included procedures to compare existing information from the Department's financial information systems with that reported to FederalReporting.gov by recipients. In addition, plans were in place to notify recipients of anomalies and/or errors exposed by the quality assurance process. While the Department has made a good deal of progress in this area, we did, however, identify several issues which could, if not addressed, impact the effectiveness of the quality assurance process.

  13. South Carolina Recovery Act State Memo | Department of Energy

    Energy Savers [EERE]

    South Carolina Recovery Act State Memo South Carolina has substantial nuclear and hydroelectric resources. The American Recovery & Reinvestment Act (ARRA) is making a meaningful...

  14. Washington Recovery Act State Memo | Department of Energy

    Energy Savers [EERE]

    Recovery Act State Memo Washington State has substantial natural resources, including biomass, wind, geothermal, and hydroelectric power. The American Recovery & Reinvestment Act...

  15. Arizona Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act State Memo Arizona has substantial natural resources, including coal, solar, and hydroelectric resources. The American Recovery & Reinvestment Act (ARRA) is...

  16. Oklahoma Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act State Memo Oklahoma has substantial natural resources, including oil, gas, solar, wind, and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is...

  17. Texas Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act State Memo Texas has substantial natural resources, including oil, gas, solar, biomass, and wind power. The American Recovery & Reinvestment Act (ARRA) is making...

  18. Alabama Recovery Act State Memo | Department of Energy

    Energy Savers [EERE]

    Alabama Recovery Act State Memo Alabama has substantial natural resources, including gas, coal, biomass, geothermal, and hydroelectric power. The American Recovery &...

  19. Wyoming Recovery Act State Memo | Department of Energy

    Energy Savers [EERE]

    Wyoming Recovery Act State Memo Wyoming has substantial natural resources including coal, natural gas, oil, and wind power. The American Recovery & Reinvestment Act (ARRA) is...

  20. Kentucky Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act State Memo Kentucky has substantial natural resources, including coal, oil, gas, and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is...

  1. Montana Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act State Memo Montana has substantial natural resources, including coal, oil, natural gas, hydroelectric, and wind power. The American Recovery & Reinvestment Act...

  2. Alaska Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Memo Alaska Recovery Act State Memo Alaska has substantial natural resources, including oil, gas, coal, solar, wind, geothermal, and hydroelectric power. The American Recovery &...

  3. Kansas Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Memo Kansas Recovery Act State Memo Kansas has substantial natural resources, including oil, gas, biomass and wind power.The American Recovery & Reinvestment Act (ARRA) is making...

  4. Louisiana Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act State Memo Louisiana has substantial natural resources, including abundant oil, gas, coal, biomass, and hydroelectric power. The American Recovery & Reinvestment Act...

  5. Arkansas Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Arkansas Recovery Act State Memo Arkansas has substantial natural resources, including gas, oil, wind, biomass, and hydroelectric power. The American Recovery & Reinvestment Act...

  6. District of Columbia Recovery Act State Memo

    Broader source: Energy.gov [DOE]

    The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the nation’s energy and environmental future. The Recovery Act investments in the District of Columbia...

  7. IDAHO RECOVERY ACT SNAPSHOT | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SNAPSHOT Idaho has substantial natural resources, including wind, geothermal, and hydroelectric power .The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  8. GEORGIA RECOVERY ACT SNAPSHOT | Department of Energy

    Energy Savers [EERE]

    ACT SNAPSHOT Georgia has substantial natural resources, including biomass and hydroelectric power .The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  9. ARIZONA RECOVERY ACT SNAPSHOT | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Arizona has substantial natural resources, including coal, solar, and hydroelectric resources. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment...

  10. Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs

    E-Print Network [OSTI]

    /Thomas Swan close-coupled showerhead cold-wall MOCVD system. The buffer epilayers of GaAs were grown on 2 in for these interfaces. In addition, when designing an in situ MOCVD process, the typical TMA/H2O is incompatible

  11. August 2010 American Recovery and

    E-Print Network [OSTI]

    Oak Ridge National Laboratory

    project was narrowed to cover 1) the feasibility study for Ground Source Heat Pump (GSHP) system-to-air heat pump systems to provide both space cooling and heating. The simulation result shows security strategy. The scope of the request covered a wide array of potential technologies. To provide

  12. Highlights from U.S. Department of Energy's Fuel Cell Recovery...

    Broader source: Energy.gov (indexed) [DOE]

    fact sheets highlights fuel cell projects funded by the American Recovery and Reinvestment Act of 2009 (Recovery Act). A total of 41.6 million in Recovery Act funding supported...

  13. Recovery Act Workers Accomplish Cleanup of Second Cold War Coal...

    Office of Environmental Management (EM)

    June 21, 2011 Recovery Act Workers Accomplish Cleanup of Second Cold War Coal Ash Basin AIKEN, S.C. - American Recovery and Reinvestment Act workers re- cently cleaned up a second...

  14. Maine Recovery Act State Memo | Department of Energy

    Energy Savers [EERE]

    State Memo Maine has substantial natural resources, including wind, biomass, and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  15. Oregon Recovery Act State Memo | Department of Energy

    Energy Savers [EERE]

    Oregon has substantial natural resources, including wind, geothermal, biomass, and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  16. New Hampshire Recovery Act State Memo | Department of Energy

    Energy Savers [EERE]

    Memo New Hampshire has substantial natural resources, including wind, biomass, and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  17. Idaho Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    State Memo Idaho has substantial natural resources, including wind, geothermal, and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  18. Hawaii Recovery Act State Memo | Department of Energy

    Energy Savers [EERE]

    has substantial natural resources, including solar, biomass , geothermal, and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  19. Missouri Recovery Act State Memo | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Act State Memo Missouri has substantial natural resources, including wind and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  20. South Dakota Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Dakota has substantial natural resources, including biomass, wind, geothermal, and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  1. Georgia Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Act State Memo Georgia has substantial natural resources, including biomass and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  2. Wisconsin Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Act State Memo Wisconsin has substantial natural resources, including biomass and hydroelectric power. The American Recovery & Reinvestment Act (ARRA)is making a meaningful down...

  3. West Virginia Recovery Act State Memo | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    West Virginia has substantial natural resources, including coal and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the...

  4. Nebraska Recovery Act State Memo | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    State Memo Nebraska has substantial natural resources, including oil, coal, wind, and hydro electric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful...

  5. Virginia Recovery Act State Memo | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Act State Memo Virginia has substantial natural resources, including coal and natural gas. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on...

  6. Utah Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Act State Memo Utah has substantial natural resources, including oil, coal, natural gas, wind, geothermal, and solar power. The American Recovery & Reinvestment Act (ARRA) is...

  7. Mississippi Recovery Act State Memo | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Mississippi has substantial natural resources, including biomass, oil, coal, and natural gas. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on...

  8. Recovery Act Workers Remediate and Restore Former Waste Sites...

    Office of Environmental Management (EM)

    Recovery Act Workers Remediate and Restore Former Waste Sites, Help Reduce Cold War Footprint RICHLAND, Wash. - The Hanford Site is looking greener these days after American...

  9. Iowa Recovery Act State Memo | Department of Energy

    Energy Savers [EERE]

    Memo Iowa has substantial natural resources, including wind power and is the largest ethanol producer in the United States. The American Recovery & Reinvestment Act (ARRA) is...

  10. Minnesota Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    has substantial natural resources, including biomass, wind power, and is a large ethanol producer. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down...

  11. Energy Secretary Chu Announces $6 Billion in Recovery Act Funding...

    Energy Savers [EERE]

    Addthis WASHINGTON, DC -- Energy Secretary Steven Chu today announced 6 billion in new funding under the American Recovery and Reinvestment Act to accelerate environmental...

  12. Recovery Act-Funded HVAC projects

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy was allocated funding from the American Recovery and Reinvestment Act to conduct research into heating, ventilation, and air conditioning (HVAC) technologies and...

  13. Recovery Act-Funded Working Fluid Projects

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy was allocated funding from the American Recovery and Reinvestment Act to conduct research into working fluid technologies and applications. Projects funded by the...

  14. Recovery Act-Funded Water Heating Projects

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy was allocated funding from the American Recovery and Reinvestment Act to conduct research into water heating technologies and applications. Projects funded by the...

  15. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P. C. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Baca, A. G. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Li, N. Y. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Xie, X. M. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Hou, H. Q. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Armour, E. [Emcore Corporation, Somerset, New Jersey 08873 (United States)] [Emcore Corporation, Somerset, New Jersey 08873 (United States)

    2000-04-17T23:59:59.000Z

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

  16. Recovery Act

    Broader source: Energy.gov [DOE]

    Recovery Act and Energy Department programs were designed to stimulate the economy while creating new power sources, conserving resources and aligning the nation to once again lead the global energy economy.

  17. Highlights from U.S. Department of Energy's Fuel Cell Recovery Act Projects

    Fuel Cell Technologies Publication and Product Library (EERE)

    This fact sheets highlights U.S. Department of Energy fuel cell projects funded by the American Recovery and Reinvestment Act of 2009 (Recovery Act). More than 1,000 fuel cell systems have been deploy

  18. The Use of the Hanford Onsite Packaging and Transportation Safety Program to Meet Cleanup Milestones Under the Hanford Site Cleanup 2015 Vision and the American Recovery and Reinvestment Act of 2009 - 12403

    SciTech Connect (OSTI)

    Lavender, John C. [CH2M HILL Plateau Remediation Company, Richland, WA 99354 (United States); Edwards, W. Scott [Areva Federal Services, Richland, WA 99354 (United States); Macbeth, Paul J.; Self, Richard J. [U.S. Department of Energy Richland Operations Office, Richland, WA 99352 (United States); West, Lori D. [Materials and Energy Corporation, Richland, WA 99354 (United States)

    2012-07-01T23:59:59.000Z

    The Hanford Site presents unique challenges in meeting the U.S. Department of Energy Richland Operations Office (DOE-RL) 2015 Cleanup Vision. CH2M Hill Plateau Remediation Company (CHPRC), its subcontractors, and DOE-RL were challenged to retrieve, transport and remediate a wide range of waste materials. Through a collaborative effort by all Hanford Onsite Central Plateau Cleanup Team Members, disposition pathways for diverse and seemingly impossible to ship wastes were developed under a DOE Order 460.1C-compliant Hanford Onsite Transportation Safety Program. The team determined an effective method for transporting oversized compliant waste payloads to processing and disposition facilities. The use of the onsite TSD packaging authorizations proved to be vital to safely transporting these materials for processing and eventual final disposition. The American Recovery and Reinvestment Act of 2009 (ARRA) provided additional resources to expedite planning and execution of these important cleanup milestones. Through the innovative and creative use of the TSD, the Hanford Onsite Central Plateau Cleanup Team Members have developed and are executing an integrated project plan that enables the safe and compliant transport of a wide variety of difficult-to-transport waste items, accelerating previous cleanup schedules to meet cleanup milestones. (authors)

  19. State Energy Efficient Appliance Rebate Program (SEEARP) American...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    State Energy Efficient Appliance Rebate Program (SEEARP) American Recovery and Reinvestment Act (ARRA) Funding Opportunity Number: DE-FOA-0000119 State Energy Efficient Appliance...

  20. Idaho Workers Complete Last of Transuranic Waste Transfers Funded by Recovery Act

    Broader source: Energy.gov [DOE]

    American Recovery and Reinvestment Act workers successfully transferred 130 containers of remote-handled transuranic waste – each weighing up to 15 tons – to a facility for...

  1. Recovery Act: State Assistance for Recovery Act Related Electricity...

    Energy Savers [EERE]

    Information Center Recovery Act Recovery Act: State Assistance for Recovery Act Related Electricity Policies Recovery Act: State Assistance for Recovery Act Related...

  2. Recovery Act Workers Clear Reactor Shields from Brookhaven Lab

    Broader source: Energy.gov [DOE]

    American Recovery and Reinvestment Act workers are in the final stage of decommissioning a nuclear reactor after they recently removed thick steel shields once used to absorb neutrons produced for...

  3. Waste Heat Recovery in the Metal Working Industry

    E-Print Network [OSTI]

    McMann, F. C.; Thurman, J.

    1983-01-01T23:59:59.000Z

    WASTE HEAT RECOVERY IN THE METAL WORKING INDUSTRY Fred C. McMann Jimmy Thurman North American Manufacturing Co. Combustion Services Company Woodlands, Texas Houston, Texas The use of exhaust gas heat exchangers to preheat combustion air...

  4. High-efficiency radiation-resistant InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T. [Toyota Technological Inst., Tempaku, Nagoya (Japan); [Japan Energy Corp., Toda, Saitama (Japan); Yamaguchi, M.; Taylor, S.J. [Toyota Technological Inst., Tempaku, Nagoya (Japan); Ikeda, E.; Agui, T.; Kurita, H. [Japan Energy Corp., Toda, Saitama (Japan)

    1997-12-31T23:59:59.000Z

    A world-record efficiency of 26.9% (AM0, 28 C) has been obtained for InGaP/GaAs tandem solar cells fabricated by the MOCVD method. The radiation resistance of the InGaP/GaAs tandem solar cells has also been evaluated following 1 MeV electron irradiation. Degradation in the tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell, which features a highly doped base layer. Similar radiation-resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. However, some recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination of forward bias, which causes defect annealing in InGaP cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10{sup 15} electrons cm{sup {minus}2}) has been examined.

  5. Temperature and pressure dependence of Mg local modes in GaN G. Kaczmarczyk,a)

    E-Print Network [OSTI]

    Nabben, Reinhard

    Temperature and pressure dependence of Mg local modes in GaN G. Kaczmarczyk,a) A. Kaschner, A in the hexagonal modification of GaN was studied within a valence-force model. The contribution caused by thermal the shift of the GaN host modes. © 2001 American Institute of Physics. DOI: 10.1063/1.1339848 Doped III

  6. Transforming the American Economy Through Innovation

    Broader source: Energy.gov [DOE]

    Secretary Chu joins Vice President Joe Biden as he details the role the Recovery Act has played in funding innovation that will help build a foundation for a more robust and competitive American...

  7. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN

  8. Power Recovery

    E-Print Network [OSTI]

    Murray, F.

    , will be the use of the ASTM Theoretical Steam Rate Tables. In addition, the author's experience regarding the minimum size for power recovery units that are economic in a Culf Coast plant will be presented. INTROD\\Jr.'rION When surveying an operation... will be discussed in detail. Each term in the equation will be considered in English units. Secondly, the use of Mollier diagrams to estimate the enthalphy change between the initial and final conditions will be considered. The last method, specific to steam...

  9. Over 30{percent} efficient InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H. [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan); Ohmori, M. [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)] [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)

    1997-01-01T23:59:59.000Z

    A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28{percent} is realized with a practical large area of 4 cm{sup 2} under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated current in the GaAs bottom cell. {copyright} {ital 1997 American Institute of Physics.}

  10. American Recovery and Reinvestment Act of 2009

    E-Print Network [OSTI]

    Nagurney, Anna

    over the current road · Important because: ­ Decrease travel time ­ Decrease travel costs ­ Decrease involves much more expensive work ­ Dredging ­ Seawall repairs · Third Phase ­ Construct handicapped

  11. Implementing the American Recovery and Reinvestment Act

    E-Print Network [OSTI]

    Management Power Generation Geothermal Wind Solar Water Power Fuels & Vehicles Biomass,000 Geothermal Technology 19,307 43,322 393,106 44,000 Solar Energy 166,320 172,414 115,963 225,000 Water Power 9 #12;Competitive Funding Available from DOE · Contracts, Grants, Cooperative Agreements · To companies

  12. Weatherization Assistance Program - The American Recovery and...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and if indicated, replacement of the same; mitigating air infiltration; and reducing electric base load consumption. Training and Technical Assistance At the national level,...

  13. American Reinvestment and Recovery Act of 2009

    E-Print Network [OSTI]

    Grishok, Alla

    by the ARRA also carries enhanced accountability and transparency. ­ Grantees must fulfill detailed quarterly unique "P" accounts for all grantees receiving ARRA funds. (Regular NIH appropriation $$$ flows to "G" accounts for all grantees) · "P" accounts do not permit cash pooling · Grantees will be required to request

  14. American Recovery and Reinvestment Act Accelerated Milestones

    Office of Environmental Management (EM)

    ARRA, the site tailored the documents to be specific to the C-340 and C-746-A East End Smelter buildings that are scoped for Paducah ARRA). Regulatory agency approval of EE CA...

  15. American Recovery and Reinvestment Act Accelerated Milestones

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613Portsmouth SitePresentations |StateNuclearWith all of the Oak RidgeContributes3 3 3

  16. EM American Recovery and Reinvestment Act Update

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 1112011 Strategic Plan Department ofNotices |Notice of38:3:1: FERC2: Alaskadrives

  17. X-ray diffraction analysis of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Nittono, T.; Hyuga, F. [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)] [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)

    1997-03-01T23:59:59.000Z

    InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition have been characterized by a high-resolution x-ray diffraction analysis of multiple quantum well structures. The flow of AsH{sub 3} to InGaP surface produces an InGaAs-like interfacial layer at the GaAs-on-InGaP interface, indicating P atoms of the InGaP surface are easily replaced by As atoms. The flow of PH{sub 3} to GaAs surface, on the other hand, does not make any detectable interfacial layer, indicating that almost no As atoms of the GaAs surface are replaced by P atoms. It is also found that the flow of trimethylgallium (TMG) to the InGaP surface produces a GaP-like interfacial layer. This interfacial layer is probably formed by the reaction between TMG and excessive P atoms on the InGaP surface or residual PH{sub 3} in the growth chamber. {copyright} {ital 1997 American Institute of Physics.}

  18. Highly doped thin-channel GaN-metalsemiconductor field-effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    . Simin, and A. Khan Department of ECE, University of South Carolina, Columbia, South Carolina 29208 JGaN/GaN heterostructure FETs. © 2001 American Institute of Physics. DOI: 10.1063/1.1344577 GaN-based heterostructure field integrated circuit MMIC in GaN, grown on a semi-insulating SiC sub- strate. This GaN MMIC achieved 20 W

  19. Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    implantation of Cu, Li and Ag into silicon doped GaN films grown by Metalorganic Chemical Vapor Deposition temperature (700-900°C) annealing. Low temperature (6K) photoluminescence (PL) for Cu-implanted GaN showed recovery of standard crystalline GaN features. Additional donor-acceptor pair features are observed below 3

  20. Carrier localization and the origin of luminescence in cubic InGaN alloys P. R. C. Kenta)

    E-Print Network [OSTI]

    Kent, Paul

    Carrier localization and the origin of luminescence in cubic InGaN alloys P. R. C. Kenta) and Alex for publication 31 July 2001 The electronic structure and optical properties of cubic nonpiezoelectric InGaN for the emission characteristics of current grown cubic InGaN alloys. © 2001 American Institute of Physics. DOI: 10

  1. Mass and Heat Recovery

    E-Print Network [OSTI]

    Hindawai, S. M.

    2010-01-01T23:59:59.000Z

    - 1 - MASS AND HEAT RECOVERY SYSTEM SALAH MAHMOUD HINDAWI DIRECTOR HINDAWI FOR ENGINEERING SERVICES & CONTRACTING NEW DAMIETTA , EGYPT ABSTRACT : In the last few years heat recovery was under spot . and in air conditioning fields... ) as a heat recovery . and I use the water as a mass recovery . The source of mass and heat recovery is the condensate water which we were dispose and connect it to the drain lines . THE BENEFIT OF THIS SYSTEM ARE : 1) Using the heat energy from...

  2. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N- GaN built-in junctions in the n-GaN layer for InGaN/GaN: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN

  3. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

    1992-01-01T23:59:59.000Z

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  4. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

    1992-08-01T23:59:59.000Z

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  5. Recovery Act State Summaries | Department of Energy

    Energy Savers [EERE]

    Act State Memo Virgin Islands Recovery Act State Memo Washington Recovery Act State Memo West Virginia Recovery Act State Memo Wisconsin Recovery Act State Memo Wyoming Recovery...

  6. Recovery News Flashes

    Broader source: Energy.gov (indexed) [DOE]

    SRS Recovery Act Prepares to Complete Shipment of More Than 5,000 Cubic Meters of Nuclear Waste to WIPP http:energy.govemdownloadstru-success-srs-recovery-act-prepares...

  7. Locating Heat Recovery Opportunities 

    E-Print Network [OSTI]

    Waterland, A. F.

    1981-01-01T23:59:59.000Z

    Basic concepts of heat recovery are defined as they apply to the industrial community. Methods for locating, ranking, and developing heat recovery opportunities are presented and explained. The needs for useful heat 'sinks' are emphasized as equal...

  8. Locating Heat Recovery Opportunities

    E-Print Network [OSTI]

    Waterland, A. F.

    1981-01-01T23:59:59.000Z

    Basic concepts of heat recovery are defined as they apply to the industrial community. Methods for locating, ranking, and developing heat recovery opportunities are presented and explained. The needs for useful heat 'sinks' are emphasized as equal...

  9. Dual mandates or dueling mandates : federal energy efficiency programs and the Recovery Act

    E-Print Network [OSTI]

    Sklarsky, Joshua (Joshua Lee)

    2010-01-01T23:59:59.000Z

    In February 2009, President Barack Obama signed the American Recovery and Reinvestment Act (ARRA) into law, providing billions of dollars in funding for federal energy efficiency programs. ARRA represented different things ...

  10. Recovery Act Funding Leads to Record Year for Transuranic Waste Shipments

    Broader source: Energy.gov [DOE]

    With the help of American Recovery and Reinvestment Act funding, the Waste Isolation Pilot Plant (WIPP) received the most transuranic waste shipments in a single year since waste operations began...

  11. Moab Project Disposes 2 Million Tons of Uranium Mill Tailings with Recovery Act Funds

    Broader source: Energy.gov [DOE]

    The Moab Uranium Mill Tailings Remedial Action Project reached its primary American Recovery and Reinvestment Act milestone ahead of schedule on Wednesday with the disposal of 2 million tons of...

  12. Battleground Energy Recovery Project

    SciTech Connect (OSTI)

    Daniel Bullock

    2011-12-31T23:59:59.000Z

    In October 2009, the project partners began a 36-month effort to develop an innovative, commercial-scale demonstration project incorporating state-of-the-art waste heat recovery technology at Clean Harbors, Inc., a large hazardous waste incinerator site located in Deer Park, Texas. With financial support provided by the U.S. Department of Energy, the Battleground Energy Recovery Project was launched to advance waste heat recovery solutions into the hazardous waste incineration market, an area that has seen little adoption of heat recovery in the United States. The goal of the project was to accelerate the use of energy-efficient, waste heat recovery technology as an alternative means to produce steam for industrial processes. The project had three main engineering and business objectives: Prove Feasibility of Waste Heat Recovery Technology at a Hazardous Waste Incinerator Complex; Provide Low-cost Steam to a Major Polypropylene Plant Using Waste Heat; and ï?· Create a Showcase Waste Heat Recovery Demonstration Project.

  13. North Carolina State Energy Office Š Energy Efficiency and Conservation Block Grant Program Funds Provided by the American Recovery and Reinvestment Act of 2009, OAS-RA-13-09

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOrigin of Contamination in ManyDepartment of Energy North American

  14. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Levelut, Claire

    Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics and Computer Engineering, University of South Carolina, Columbia, South Carolina 29208 X. Hu Sensor Electronic from the channel to the silicon donor level in GaN is discussed. © 2002 American Institute of Physics

  15. Mean transverse energy and response time measurements of GaInP based photocathodes

    SciTech Connect (OSTI)

    Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Nagoya 464-8603 (Japan); Yamamoto, Masahiro; Miyajima, Tsukasa; Honda, Yosuke; Uchiyama, Takashi [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Tabuchi, Masao [Nagoya University Synchrotron Radiation Research Center, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

    2014-08-14T23:59:59.000Z

    GaInP, which has a wider band gap than GaAs, is introduced as a photocathode for energy recovery linac (ERL). The wide band gap of material is expected to reduce the heating effect in the thermal relaxation process after high energy excitation. GaInP photocathodes exhibited higher quantum efficiency than GaAs and low thermal emittance as the same as GaAs photocathodes under green laser light irradiation. A short picosecond electron pulse was also achieved with the GaInP photocathode under 532?nm pulse laser irradiation. These experimental results demonstrate that the GaInP photocathode is an important candidate for ERL.

  16. Waste Heat Recovery

    Office of Environmental Management (EM)

    DRAFT - PRE-DECISIONAL - DRAFT 1 Waste Heat Recovery 1 Technology Assessment 2 Contents 3 1. Introduction to the TechnologySystem ......

  17. Small Business Administration Recovery Act Implementation | Department...

    Broader source: Energy.gov (indexed) [DOE]

    Small Business Administration Recovery Act Implementation Small Business Administration Recovery Act Implementation Small Business Administration Recovery Act Implementation Small...

  18. Recovery Boiler Corrosion Chemistry

    E-Print Network [OSTI]

    Das, Suman

    11/13/2014 1 Recovery Boiler Corrosion Chemistry Sandy Sharp and Honghi Tran Symposium on Corrosion of a recovery boiler each cause their own forms of corrosion and cracking Understanding the origin of the corrosive conditions enables us to operate a boiler so as to minimize corrosion and cracking select

  19. Mass and Heat Recovery 

    E-Print Network [OSTI]

    Hindawai, S. M.

    2010-01-01T23:59:59.000Z

    In the last few years heat recovery was under spot and in air conditioning fields usually we use heat recovery by different types of heat exchangers. The heat exchanging between the exhaust air from the building with the fresh air to the building...

  20. Hydrogen sensing characteristics of semipolar (112{sup ¯}2) GaN Schottky diodes

    SciTech Connect (OSTI)

    Hyeon Baik, Kwang [School of Materials Science and Engineering, Hongik University, Jochiwon, Sejong 339-701 (Korea, Republic of); Kim, Hyonwoong; Jang, Soohwan, E-mail: jangmountain@dankook.ac.kr [Department of Chemical Engineering, Dankook University, Yongin 448-701 (Korea, Republic of); Lee, Sung-Nam [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 (Korea, Republic of); Lim, Eunju [Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Yongin 448-701 (Korea, Republic of); Pearton, S. J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Ren, F. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)

    2014-02-17T23:59:59.000Z

    The hydrogen detection characteristics of semipolar (112{sup ¯}2) plane GaN Schottky diodes were investigated and compared to c-plane Ga- and N-polar and nonpolar a-plane (112{sup ¯}0) GaN diodes. The semipolar GaN diodes showed large current response to 4% hydrogen in nitrogen gas with an accompanying Schottky barrier reduction of 0.53?eV at 25?°C, and the devices exhibited full recovery to the initial current level upon switching to a nitrogen ambient. The current-voltage characteristics of the semipolar devices remained rectifying after hydrogen exposure, in sharp contrast to the case of c-plane N-polar GaN. These results show that the surface atom configuration and polarity play a strong role in hydrogen sensing with GaN.

  1. 1 American Studies AMERICAN STUDIES

    E-Print Network [OSTI]

    Vertes, Akos

    1 American Studies AMERICAN STUDIES An innovative department with 15 core faculty and 12 affiliated of culture, ideas and religious beliefs; the development and transformation of public cultures and spaces. Topics include the civil rights movement, the student movement, the Vietnam War, and the counterculture

  2. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer

  3. Solvent recycle/recovery

    SciTech Connect (OSTI)

    Paffhausen, M.W.; Smith, D.L.; Ugaki, S.N.

    1990-09-01T23:59:59.000Z

    This report describes Phase I of the Solvent Recycle/Recovery Task of the DOE Chlorinated Solvent Substitution Program for the US Air Force by the Idaho National Engineering Laboratory, EG G Idaho, Inc., through the US Department of Energy, Idaho Operations Office. The purpose of the task is to identify and test recovery and recycling technologies for proposed substitution solvents identified by the Biodegradable Solvent Substitution Program and the Alternative Solvents/Technologies for Paint Stripping Program with the overall objective of minimizing hazardous wastes. A literature search to identify recycle/recovery technologies and initial distillation studies has been conducted. 4 refs.

  4. Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures

    E-Print Network [OSTI]

    Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP September 2007 Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing

  5. Flash Steam Recovery Project 

    E-Print Network [OSTI]

    Bronhold, C. J.

    2000-01-01T23:59:59.000Z

    /condensate recovery system, resulting in condensate flash steam losses to the atmosphere. Using computer simulation models and pinch analysis techniques, the Operational Excellence Group (Six Sigma) was able to identify a project to recover the flash steam losses as a...

  6. Recovery Boiler Modeling 

    E-Print Network [OSTI]

    Abdullah, Z.; Salcudean, M.; Nowak, P.

    1994-01-01T23:59:59.000Z

    Preliminary computations of the cold flow in a simplified geometry of a recovery boiler are presented. The computations have been carried out using a new code containing multigrid methods and segmentation techniques. This approach is shown...

  7. Recovery Boiler Modeling

    E-Print Network [OSTI]

    Abdullah, Z.; Salcudean, M.; Nowak, P.

    Preliminary computations of the cold flow in a simplified geometry of a recovery boiler are presented. The computations have been carried out using a new code containing multigrid methods and segmentation techniques. This approach is shown...

  8. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  9. Recovery Act State Memos Montana

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... 5 RECOVERY ACT SUCCESS STORIES - ENERGY EMPOWERS * Green power transmission line given new life ......

  10. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  11. GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

    SciTech Connect (OSTI)

    Keshagupta, P.; Radpour, F. [Univ. of Cincinnati, OH (United States)

    1994-12-31T23:59:59.000Z

    In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

  12. Development of high-efficiency GaAs solar cells on polycrystalline Ge substrates

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; OQuinn, B.; Hills, J.; Malta, D.; Timmons, M.L.; Hutchby, J.A. [Research Triangle Institute, Research Triangle Park, North Carolina 27709 (United States); Ahrenkiel, R.; Keyes, B.M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    1996-01-01T23:59:59.000Z

    Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs solar cell on poly-Ge and to improve our previous best efficiency from 15.8{percent} for a 1-cm{sup 2}-area GaAs cell to 16.7{percent} for a 4-cm{sup 2}-area GaAs solar cell on poly-Ge. {copyright} {ital 1996 American Institute of Physics.}

  13. Impact of high energy particles in InGaP/InGaAs pseudomorphic HEMTs

    SciTech Connect (OSTI)

    Ohyama, H.; Hakata, T. [Kumamoto National Coll. of Technology, Nishigoshi, Kumamoto (Japan)] [Kumamoto National Coll. of Technology, Nishigoshi, Kumamoto (Japan); Simoen, E.; Claeys, C. [IMEC, Leuven (Belgium)] [IMEC, Leuven (Belgium); Kuroda, S. [Fujitsu Quantum Devices Ltd., Yamanashi (Japan)] [Fujitsu Quantum Devices Ltd., Yamanashi (Japan); Takami, Y. [Rikkyo Univ., Yokosuka, Kanagawa (Japan)] [Rikkyo Univ., Yokosuka, Kanagawa (Japan); Sunaga, H. [Takasaki JAERI, Takasaki, Gunma (Japan)] [Takasaki JAERI, Takasaki, Gunma (Japan)

    1998-12-01T23:59:59.000Z

    Irradiation damage and its recovery behavior resulting from thermal annealing in InGaP/InGaAs pseudomorphic HEMTs, subjected to a 20-MeV alpha ray and 220-MeV carbon, are studied for the first time. The drain current and effective mobility decrease after irradiation, while the threshold voltage increases in positive direction. The degradation of device performance increases with increasing fluence. The decrease of the mobility is thought to be due to the scattering of channel electrons with the induced lattice defects and also to the decrease of the electron density in the two dimensional electron gas (2DEG) region. The influence of the radiation source on the degradation and recovery is discussed by comparison with 1-MeV electron and 1-MeV fast neutron exposures with respect to the number of knock-on atoms and the nonionizing energy loss (NIEL). Isochronal thermal annealing for temperatures ranging from 75 to 300 C shows that the device performance degraded by the irradiation recovers completely.

  14. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    SciTech Connect (OSTI)

    Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

    2011-12-23T23:59:59.000Z

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

  15. Material optimization for a polarized electron source from strained GaAs:Be grown on an InGaP pseudosubstrate

    SciTech Connect (OSTI)

    Bi, W.G.; Tu, C.W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States)] [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States)

    1996-05-01T23:59:59.000Z

    We report material optimization for a polarized electron source from strained GaAs:Be grown on an In{sub {ital x}{sub 0}}Ga{sub 1{minus}{ital x}{sub 0}}P pseudosubstrate, i.e., a fully relaxed In{sub {ital x}{sub 0}}Ga{sub 1{minus}{ital x}{sub 0}}P buffer layer on a GaP substrate, whereby the large lattice mismatch between the In{sub {ital x}{sub 0}}Ga{sub 1{minus}{ital x}{sub 0}}P and the GaP was relieved by a linearly graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}P buffer layer. By changing the In composition {ital x}{sub 0} in the In{sub {ital x}{sub 0}}Ga{sub 1{minus}{ital x}{sub 0}}P, strained GaAs:Be active layers with various lattice mismatch were obtained, and the effect of growth conditions on the residual strain in GaAs as well as the strain-induced enhancement of electron-spin polarization were studied. The results show that the residual strain in the GaAs layer is very sensitive to the growth temperatures, and that by choosing the right growth conditions, the strain in GaAs can be maintained even when the film exceeds its theoretical critical layer thickness. Enhanced electron-spin polarization has been observed from samples with larger strain. {copyright} {ital 1996 American Vacuum Society}

  16. ARM - Recovery Act

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMForms About Become a UsergovAboutRecovery Act Recovery Act Logo

  17. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

    E-Print Network [OSTI]

    Compositionally-graded InGaAs­InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem

  18. Recovery Act Recipient Data | Department of Energy

    Office of Environmental Management (EM)

    Recovery Act Recipient Data Recovery Act Recipient Data A listing of all Recovery Act recipients and their allocations. Updated weekly. recoveryactfunding.xls More Documents &...

  19. Some Thoughts on Econometric Information Recovery

    E-Print Network [OSTI]

    Judge, George G.

    2013-01-01T23:59:59.000Z

    Paper 1135 Some Thoughts on Econometric Information Recoverys). Some Thoughts on Econometric Information Recovery GeorgeTheoretic Approach To Econometric Information Recovery

  20. Challenges in Industrial Heat Recovery

    E-Print Network [OSTI]

    Dafft, T.

    2007-01-01T23:59:59.000Z

    This presentation will address several completed and working projects involving waste heat recovery in a chemical plant. Specific examples will be shown and some of the challenges to successful implementation and operation of heat recovery projects...

  1. Sparse recovery and Fourier sampling

    E-Print Network [OSTI]

    Price, Eric C

    2013-01-01T23:59:59.000Z

    In the last decade a broad literature has arisen studying sparse recovery, the estimation of sparse vectors from low dimensional linear projections. Sparse recovery has a wide variety of applications such as streaming ...

  2. Challenges in Industrial Heat Recovery 

    E-Print Network [OSTI]

    Dafft, T.

    2007-01-01T23:59:59.000Z

    This presentation will address several completed and working projects involving waste heat recovery in a chemical plant. Specific examples will be shown and some of the challenges to successful implementation and operation of heat recovery projects...

  3. Recovery Act State Memos Nebraska

    Energy Savers [EERE]

    ... 6 RECOVERY ACT SUCCESS STORIES - ENERGY EMPOWERS * Biofuels company builds new facility in Nebraska ... 7 * Nebraska appliance rebate...

  4. Recovery Act State Memos Arkansas

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6 RECOVERY ACT SUCCESS STORIES - ENERGY EMPOWERS * Program finds unique way to fund energy upgrades ... 7 * Green collar courses ......

  5. Temperature dependence of thermal conductivity of AlxGa1-xN thin films measured by the differential 3 technique

    E-Print Network [OSTI]

    are important for further development of nitride technology due to the problem of self-heating in Ga are important for modeling the self-heating effects in GaN transistors and can be used for the device structure optimization. © 2004 American Institute of Physics. [DOI: 10.1063/1.1829168] Self-heating presents a serious

  6. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    Torr and consisted of a 1.4 lm undoped GaN buffer layer on i-SiC substrate, * Corresponding authorLow frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors N. Pala a November 2002 Abstract Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect

  7. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    E-Print Network [OSTI]

    Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

    2010-08-24T23:59:59.000Z

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  8. Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory

    E-Print Network [OSTI]

    Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact; published online 20 October 2006 The authors have studied the electronic structure of InN and GaN employing. © 2006 American Institute of Physics. DOI: 10.1063/1.2364469 The group III-nitrides AlN, GaN, and In

  9. Incorporating Energy Efficiency into Disaster Recovery Efforts...

    Energy Savers [EERE]

    Incorporating Energy Efficiency into Disaster Recovery Efforts Incorporating Energy Efficiency into Disaster Recovery Efforts Better Buildings Residential Network Program...

  10. Waste Heat Recovery Opportunities for Thermoelectric Generators...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Waste Heat Recovery Opportunities for Thermoelectric Generators Waste Heat Recovery Opportunities for Thermoelectric Generators Thermoelectrics have unique advantages for...

  11. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three

  12. Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    , and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, University of South Carolina, Columbia, South Carolina 29208 Received 22 January 2001; accepted American Institute of Physics. DOI: 10.1063/1.1372364 I. INTRODUCTION A recent report on GaN highly doped

  13. Elemental sulfur recovery process

    DOE Patents [OSTI]

    Flytzani-Stephanopoulos, M.; Zhicheng Hu.

    1993-09-07T23:59:59.000Z

    An improved catalytic reduction process for the direct recovery of elemental sulfur from various SO[sub 2]-containing industrial gas streams. The catalytic process provides combined high activity and selectivity for the reduction of SO[sub 2] to elemental sulfur product with carbon monoxide or other reducing gases. The reaction of sulfur dioxide and reducing gas takes place over certain catalyst formulations based on cerium oxide. The process is a single-stage, catalytic sulfur recovery process in conjunction with regenerators, such as those used in dry, regenerative flue gas desulfurization or other processes, involving direct reduction of the SO[sub 2] in the regenerator off gas stream to elemental sulfur in the presence of a catalyst. 4 figures.

  14. Industrial Waste Heat Recovery

    E-Print Network [OSTI]

    Ward, M. E.; Solomon, N. G.; Tabb, E. S.

    1980-01-01T23:59:59.000Z

    INDUSTRIAL WASTE HEAT RECOVREY M. E. Ward and N. G. Solomon E. S. Tabb Solar Turbines International and Gas Research Institute San Diego, California Chicago, Illinois ABSTRACT i I One hundred fifty reports were reviewed along with interviews... tests, promising low temperature heat exchanger tube alloys and coated surfaces were identified. 1INTROUCTION of advanced technology heat recovery techniques 1_ Recovering waste heat from the flue gases of the pr~ary objective. Specific objectives...

  15. Recovery Act Open House

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's PossibleRadiation Protection RadiationRecord-Setting Microscopy IlluminatesHandbookRODs Recovery

  16. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1

    E-Print Network [OSTI]

    Nabben, Reinhard

    Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1 , T. Stempel1/37, 01-142 Warsaw, Poland ABSTRACT Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumines- cence

  17. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

    SciTech Connect (OSTI)

    Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-06-21T23:59:59.000Z

    The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

  18. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01T23:59:59.000Z

    T. Henderson, “High- Speed InGaP/GaAs HBT’s Using a SimpleA typical AlGaAs/GaAs HBT or InGaP/GaAs HBT has the opposite

  19. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  20. Davis-Bacon Act - Under the American Recovery and Reinvestment...

    Energy Savers [EERE]

    gtp2012peerreviewdbanathwani.pdf More Documents & Publications DAVIS-BACON ACT WAGE RATES FOR ARRA-FUNDED STATE ENERGY PROGRAM (SEP) PROJECTS INCLUDING RESIDENTIAL...

  1. American Reinvestment and Recovery Act § 1553: Protecting State...

    Office of Environmental Management (EM)

    supervisory authority over the employee, a court or grand jury, the head of a Federal agency, or their representatives, information that the employee reasonably believes is...

  2. Introduction to the American Recovery and Reinvestment Act: ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laboratory Carbon Storage - Monitoring, Verification, Accounting, and Assessment potential release pathways from the formation to the surface. For example, the Carbon...

  3. Introduction to the American Recovery and Reinvestment Act: ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    into risk assessments on both a project-by-project and larger basin-scale basis. As CCS is deployed in major basins, macro model results will be needed to manage reservoir...

  4. Introduction to the American Recovery and Reinvestment Act: ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    formations, Black Warrior Basin, Alabama 5 University of Illinois An Evaluation of the Carbon Sequestration Potential of the Cambro-Ordovician Strata of the Illinois and...

  5. American Recovery and Reinvestment Act Payments Soar Past $4...

    Office of Environmental Management (EM)

    West Valley Demonstration Project 62,875,000 62,875,000 51,860,254 Title X UraniumThorium Reimbursements 70,000,000 69,996,978 54,994,235 Management & Oversight 27,920,000...

  6. REPORTING REQUIREMENTS American Recovery and Reinvestment Act of 2009

    E-Print Network [OSTI]

    by the Battelle Contracts Representative, but prior to award of the resulting Contract. When requested to complete. Solicitation Number: ________________________ 2. Name of Battelle Contracts Representative

  7. Projects Funded by the American Recovery and Reinvestment Act...

    Broader source: Energy.gov (indexed) [DOE]

    remodeling, improving, extending, or making other changes to a facility, exclusive of maintenance repairs that are preventive in nature. The term includes planning,...

  8. PRESENTATION TOPICS Overview of the American Recovery and

    E-Print Network [OSTI]

    Loans repaid from energy cost savings Maximum loan amount is $3 million per application Have approved available for three part program designed to achieve cost effective energy efficiency in existing Minimum funding levels: $25,000 per city $50,000 per county Energy Commission allocating 70 percent

  9. Weatherization Formula Grants - American Recovery and Reinvestment Act

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradley Nickell DirectorThe Water PowerLastKevin Craft Gaylene

  10. Weatherization Formula Grants - American Recovery and Reinvestment Act

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradley Nickell DirectorThe Water PowerLastKevin Craft Gaylene(ARRA)

  11. Projects Funded by the American Recovery and Reinvestment Act...

    Energy Savers [EERE]

    Efficiency and Renewable Energy (EERE) Notice U.S. Department of Energy (DOE) National Environmental Policy Act (NEPA) guidelines for states and U.S. territories sponsoring...

  12. Audit Report: The Department of Energy's American Recovery and Reinvestment

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33Frequently20,000 RussianBy:WhetherNovember 13, 2009 Management Controls3,July 21,

  13. American Recovery and Reinvestment Act of 2009 | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed off Energy.gov. Are you0 ARRA Newsletters 20103-03EnergyAlternativeAmerica'sof

  14. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33Frequently AskedEnergyIssuesEnergy Solar Decathlon2001 Power PlantAPRIL 1,

  15. Planet Resource Recovery Inc formerly American Biodiesel Fuels Corp | Open

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation,Pillar Group BV Jump to: navigation, search Name:Pipo SystemsPlaneCarbon Jump

  16. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2, 2015 - JanuaryTank 48H TreatmentEnergy TestTexas

  17. Environmental Management American Recovery & Reinvestment Act (ARRA)

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122Commercial602 1,39732 DOEDepartment of Energy 3Department U.S. Department

  18. American Recovery and Reinvestment Act, Financial Assistance Award: 212

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  19. Deputy Secretary Poneman: Recovery Act Putting Americans to Work and

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed off Energy.gov. Are you0andEnergyGlobal Nuclearof aDepartment- theDepartment ofPrepared

  20. American Recovery & Reinvestment Act Newsletter - Issue 10

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO Overview OCHCOSystemsProgram OverviewAdvocate - IssueAlpenaAmandaSH Coatings LP1 1 1 0 0 0

  1. American Recovery & Reinvestment Act Newsletter - Issue 11

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO Overview OCHCOSystemsProgram OverviewAdvocate - IssueAlpenaAmandaSH Coatings LP1 1 1 0 0 0

  2. American Recovery & Reinvestment Act Newsletter - Issue 12

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO Overview OCHCOSystemsProgram OverviewAdvocate - IssueAlpenaAmandaSH Coatings LP1 1 1 0 0 0

  3. American Recovery & Reinvestment Act Newsletter - Issue 13

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO Overview OCHCOSystemsProgram OverviewAdvocate - IssueAlpenaAmandaSH Coatings LP1 1 1 0 0

  4. American Recovery & Reinvestment Act Newsletter - Issue 14

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO Overview OCHCOSystemsProgram OverviewAdvocate - IssueAlpenaAmandaSH Coatings LP1 1 1 0

  5. American Recovery & Reinvestment Act Newsletter - Issue 15

    Energy Savers [EERE]

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  6. American Recovery & Reinvestment Act Newsletter - Issue 16

    Energy Savers [EERE]

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  7. American Recovery & Reinvestment Act Newsletter - Issue 17

    Energy Savers [EERE]

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  8. American Recovery & Reinvestment Act Newsletter - Issue 18

    Energy Savers [EERE]

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  9. American Recovery & Reinvestment Act Newsletter - Issue 19

    Energy Savers [EERE]

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  10. American Recovery & Reinvestment Act Newsletter - Issue 9

    Energy Savers [EERE]

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  11. American Recovery and Reinvestment Act of 2009 | Department of Energy

    Energy Savers [EERE]

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  12. American Recovery and Reinvestment Act of 2009 | Department of Energy

    Energy Savers [EERE]

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  13. American Recovery and Reinvestment Act | Department of Energy

    Energy Savers [EERE]

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  14. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  15. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  16. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  17. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  18. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  19. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  20. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  1. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreakingMayDepartmentTest for Pumping System EfficiencyRole of(EAP)(EAP)(EAP)

  2. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreakingMayDepartmentTest for Pumping System EfficiencyRole of(EAP)(EAP)(EAP)(EAP)

  3. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  4. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreakingMayDepartmentTest for Pumping System EfficiencyRole(EAP) Bulletin, October 3

  5. American Recovery & Reinvestment Act Newsletter - Issue 2

    Office of Environmental Management (EM)

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  6. American Recovery & Reinvestment Act Newsletter - Issue 20

    Office of Environmental Management (EM)

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  7. American Recovery & Reinvestment Act Newsletter - Issue 21

    Office of Environmental Management (EM)

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  8. American Recovery & Reinvestment Act Newsletter - Issue 22

    Office of Environmental Management (EM)

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  9. American Recovery & Reinvestment Act Newsletter - Issue 23

    Office of Environmental Management (EM)

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  10. American Recovery & Reinvestment Act Newsletter - Issue 24

    Office of Environmental Management (EM)

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  11. American Recovery & Reinvestment Act Newsletter - Issue 25

    Office of Environmental Management (EM)

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  12. American Recovery & Reinvestment Act Newsletter - Issue 26

    Office of Environmental Management (EM)

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  13. American Recovery & Reinvestment Act Newsletter - Issue 27

    Office of Environmental Management (EM)

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  14. American Recovery & Reinvestment Act Newsletter - Issue 28

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613Portsmouth SitePresentations |StateNuclearWith all of the Oak RidgeContributes

  15. American Recovery & Reinvestment Act Newsletter - Issue 29

    Office of Environmental Management (EM)

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  16. American Recovery & Reinvestment Act Newsletter - Issue 3

    Office of Environmental Management (EM)

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  17. American Recovery & Reinvestment Act Newsletter - Issue 4

    Office of Environmental Management (EM)

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  18. American Recovery & Reinvestment Act Newsletter - Issue 5

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613Portsmouth SitePresentations |StateNuclearWith all of the Oak RidgeContributes3 3 3 J

  19. American Recovery & Reinvestment Act Newsletter - Issue 6

    Office of Environmental Management (EM)

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  20. American Recovery & Reinvestment Act Newsletter - Issue 7

    Office of Environmental Management (EM)

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  1. American Recovery & Reinvestment Act Newsletter - Issue 8

    Office of Environmental Management (EM)

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  2. American Recovery and Reinvestment Act Payments Surge Past $4 Billion |

    Office of Environmental Management (EM)

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  3. American Recovery and Reinvestment Act Payments Surge Past $5 Billion |

    Office of Environmental Management (EM)

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  4. American Recovery and Reinvestment Act | Open Energy Information

    Open Energy Info (EERE)

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  5. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  6. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOriginEducationVideoStrategic| DepartmentDepartment ofTankTest

  7. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOriginEducationVideoStrategic| DepartmentDepartment ofTankTest(EAP) Bulletin, April 2, 2012,

  8. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOriginEducationVideoStrategic| DepartmentDepartment ofTankTest(EAP) Bulletin, April 2, 2012,(EAP)

  9. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOriginEducationVideoStrategic| DepartmentDepartment ofTankTest(EAP) Bulletin, April 2,

  10. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOriginEducationVideoStrategic| DepartmentDepartment ofTankTest(EAP) Bulletin, April 2,(EAP)

  11. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOriginEducationVideoStrategic| DepartmentDepartment ofTankTest(EAP) Bulletin, April 2,(EAP)(EAP)

  12. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOriginEducationVideoStrategic| DepartmentDepartment ofTankTest(EAP) Bulletin, April

  13. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOriginEducationVideoStrategic| DepartmentDepartment ofTankTest(EAP) Bulletin, April(EAP)

  14. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOriginEducationVideoStrategic| DepartmentDepartment ofTankTest(EAP) Bulletin,

  15. The American Recovery and Reinvestment Act (ARRA) Energy Assurance Planning

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOriginEducationVideoStrategic| DepartmentDepartment ofTankTest(EAP) Bulletin,(EAP) Bulletin,

  16. Synthesis, structure, and optical properties of colloidal GaN quantum dots

    SciTech Connect (OSTI)

    Micic, O.I.; Ahrenkiel, S.P.; Bertram, D.; Nozik, A.J. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    1999-07-01T23:59:59.000Z

    Colloidal chemistry was used to synthesize GaN quantum dots. A GaN precursor, polymeric gallium imide, {l_brace}Ga(NH){sub 3/2}{r_brace}{sub n}, which was prepared by the reaction of dimeric amidogallium with ammonia at room temperature, was heated in trioctylamine at 360&hthinsp;{degree}C for one day to produce GaN nanocrystals. The GaN particles were separated, purified, and partially dispersed in a nonpolar solvent to yield transparent colloidal solutions that consisted of individual GaN particles. The GaN nanocrystals have a spherical shape and mean diameter of about 30{plus_minus}12&hthinsp;{Angstrom}. The spectroscopic behavior of colloidal transparent dispersion has been investigated and shows that the band gap of the GaN nanocrystals shifts to slightly higher energy due to quantum confinement. The photoluminescence spectrum at 10 K (excited at 310 nm) shows band edge emission with several emission peaks in the range between 3.2 and 3.8 eV, while the photoluminescence excitation spectrum shows two excited-state transitions at higher energies. {copyright} {ital 1999 American Institute of Physics.}

  17. Finishing Strong in 2011: The Recovery Act at Work at Savannah River Site

    SciTech Connect (OSTI)

    None

    2011-01-01T23:59:59.000Z

    American Recovery and Reinvestment Act's highlights and accomplishments for 2011 projects. Covers the latest technology and robotics used for waste management. This video is an overview of the success ARRA brought to the Savannah River Site, the environment, the econonmy, and the surrounding communities.

  18. Finishing Strong in 2011: The Recovery Act at Work at Savannah River Site

    ScienceCinema (OSTI)

    None

    2012-06-14T23:59:59.000Z

    American Recovery and Reinvestment Act's highlights and accomplishments for 2011 projects. Covers the latest technology and robotics used for waste management. This video is an overview of the success ARRA brought to the Savannah River Site, the environment, the econonmy, and the surrounding communities.

  19. Grantee Performance Required to Release the Hold on Remaining 50% of Obligated Recovery Act Funds

    Broader source: Energy.gov [DOE]

    U.S. Department of Energy (DOE) Office of Energy Efficiency and Renewable Energy (EERE) Weatherization Assistance Program Notice 10-05 deals with performance requirements for program grantees?states and U.S. territories?to receive the remaining 50% of obligated funds under the 2009 American Reinvestment and Recovery Act.

  20. Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta

    E-Print Network [OSTI]

    Svane, Axel Torstein

    69,71 Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta Department of Physics properties of wurtzite GaN are studied by Ga nuclear magnetic resonance NMR in a GaN bulk crystal containing GaN is a wide band-gap semiconductor which crystallizes in the hexagonal wurtzite structure

  1. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions Y Abstract Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region

  2. Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao1, USA tpalacios@mit.edu; (617) 324-2395 Keywords: AlGaN/GaN HEMTs, reliability, moisture, electro-chemical reactions Abstract The nature of structural degradation in AlGaN/GaN high electron mobility transistors

  3. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High

    E-Print Network [OSTI]

    Li, Yat

    Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN

  4. Beta decay of Ga-62 

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

  5. Recovery of organic acids

    DOE Patents [OSTI]

    Verser, Dan W. (Menlo Park, CA); Eggeman, Timothy J. (Lakewood, CO)

    2011-11-01T23:59:59.000Z

    A method is disclosed for the recovery of an organic acid from a dilute salt solution in which the cation of the salt forms an insoluble carbonate salt. A tertiary amine and CO.sub.2 are introduced to the solution to form the insoluble carbonate salt and a complex between the acid and an amine. A water immiscible solvent, such as an alcohol, is added to extract the acid/amine complex from the dilute salt solution to a reaction phase. The reaction phase is continuously dried and a product between the acid and the solvent, such as an ester, is formed.

  6. Recovery of organic acids

    DOE Patents [OSTI]

    Verser, Dan W. (Golden, CO); Eggeman, Timothy J. (Lakewood, CO)

    2009-10-13T23:59:59.000Z

    A method is disclosed for the recovery of an organic acid from a dilute salt solution in which the cation of the salt forms an insoluble carbonate salt. A tertiary amine and CO.sub.2 are introduced to the solution to form the insoluble carbonate salt and a complex between the acid and an amine. A water immiscible solvent, such as an alcohol, is added to extract the acid/amine complex from the dilute salt solution to a reaction phase. The reaction phase is continuously dried and a product between the acid and the solvent, such as an ester, is formed.

  7. ARM - Recovery Act Instruments

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadap Documentation TDMADAP :ProductsVaisala CL51Instruments Related Links RHUBC-IIActRecovery Act

  8. Summary - Caustic Recovery Technology

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 1112011 Strategic2Uranium Transferon the Passing of AdmiraltheOil and Less CO2Caustic Recovery

  9. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  10. Making a Lasting Impression: Recovery Act Reporting At Hanford - 12528

    SciTech Connect (OSTI)

    Tebrugge, Kimberly; Disney, Maren [CH2MHILL Plateau Remediation Company, Richland, WA (United States)

    2012-07-01T23:59:59.000Z

    The award of American Recovery and Reinvestment Act funding came with an unprecedented request for transparency to showcase to the American public how the stimulus funding was being put to work to achieve the goals put forth by the U.S. Government. At the U.S. Department of Energy Hanford Site, this request manifested in a contract requirement to provide weekly narrative, photos and video to highlight Recovery Act-funded projects. For DOE contractor CH2M HILL Plateau Remediation Company (CH2M HILL), the largest recipient of Hanford's funding, the reporting mechanism evolved into a communications tool for documenting the highly technical cleanup, then effectively sharing that story with the DOE and its varying stakeholder audiences. The report set the groundwork for building a streaming narrative of week-by-week progress. With the end of the Recovery Act, CH2M HILL is applying lessons learned from this stringent, transparent reporting process to its long-term reporting and communications of the progress being made in nuclear decommissioning at Hanford. (authors)

  11. Recovery Act | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    three Recovery Act-funded Smart Grid Investment Grant (SGIG) projects. February 28, 2014 Smart Meter Investments Yield Positive Results in Maine Central Maine Power's (CMP) SGIG...

  12. Economic Recovery Loan Program (Maine)

    Broader source: Energy.gov [DOE]

    The Economic Recovery Loan Program provides subordinate financing to help businesses remain viable and improve productivity. Eligibility criteria are based on ability to repay, and the loan is...

  13. Register file soft error recovery

    DOE Patents [OSTI]

    Fleischer, Bruce M.; Fox, Thomas W.; Wait, Charles D.; Muff, Adam J.; Watson, III, Alfred T.

    2013-10-15T23:59:59.000Z

    Register file soft error recovery including a system that includes a first register file and a second register file that mirrors the first register file. The system also includes an arithmetic pipeline for receiving data read from the first register file, and error detection circuitry to detect whether the data read from the first register file includes corrupted data. The system further includes error recovery circuitry to insert an error recovery instruction into the arithmetic pipeline in response to detecting the corrupted data. The inserted error recovery instruction replaces the corrupted data in the first register file with a copy of the data from the second register file.

  14. Recovery Act State Memos Florida

    Energy Savers [EERE]

    of renewable energy. The Florida Energy and Climate Commission has awarded the Florida Solar Energy Center (FSEC) 10 million in Recovery Act money, enabling the center to set...

  15. National Institutes of Health American Recovery and Reinvestment Act (Recovery Act)

    E-Print Network [OSTI]

    Krovi, Venkat

    on Drug Abuse $261.2 $139.1 $122.1 National Institute on Alcohol Abuse and Alcoholism $113.9 $65.3 $48 to gain new knowledge; communicates and transfers new knowledge to the public and health care providers

  16. Performance of single-junction and dual-junction InGaP/GaAs solar cells under low concentration ratios

    SciTech Connect (OSTI)

    Khan, Aurangzeb; Yamaguchi, Masafumi; Takamoto, Tatsuya [Department of Electrical and Computer Engineering, University of South Alabama, Mobile, Alabama 36688 (United States); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Sharp Corporation, 282-1 Hajikami, Shinjo, Nara 639-2198 (Japan)

    2004-10-11T23:59:59.000Z

    A study of the performance of single-junction InGaP/GaAs and dual-junction InGaP/GaAs tandem cells under low concentration ratios (up to 15 suns), before and after 1 MeV electron irradiation is presented. Analysis of the tunnel junction parameters under different concentrated light illuminations reveals that the peak current (J{sub P}) and valley current (J{sub V}) densities should be greater than the short-circuit current density (J{sub sc}) for better performance. The tunnel junction behavior against light intensity improved after irradiation. This led to the suggestion that the peak current density (J{sub P}) and valley current density (J{sub V}) of the tunnel junction were enhanced after irradiation or the peak current was shifted to higher concentration. The recovery of the radiation damage under concentrated light illumination conditions suggests that the performance of the InGaP/GaAs tandem solar cell can be enhanced even under low concentration ratios.

  17. ISSN: 1524-4571 Copyright 2006 American Heart Association. All rights reserved. Print ISSN: 0009-7330. Online

    E-Print Network [OSTI]

    Hammock, Bruce D.

    ISSN: 1524-4571 Copyright © 2006 American Heart Association. All rights reserved. Print ISSN: 0009-7330. Online TX 72514 Circulation Research is published by the American Heart Association. 7272 Greenville Function Role of Soluble Epoxide Hydrolase in Postischemic Recovery of Heart http

  18. Recovery Act State Memos Missouri

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    This process is capable of making polytetrafluoroethylene (PTFE) and other synthetic media air filters for the American Association of Heating, Refrigeration and...

  19. Metal recovery from porous materials

    DOE Patents [OSTI]

    Sturcken, E.F.

    1991-01-01T23:59:59.000Z

    The present invention relates to recovery of metals. More specifically, the present invention relates to the recovery of plutonium and other metals from porous materials using microwaves. The United States Government has rights in this invention pursuant to Contract No. DE-AC09-89SR18035 between the US Department of Energy and Westinghouse Savannah River Company.

  20. Hydraulic waste energy recovery

    SciTech Connect (OSTI)

    Lederer, C.C.; Thomas, A.H.; McGuire, J.L. (Detroit Buildings and Safety Engineering Dept., MI (USA))

    1990-12-01T23:59:59.000Z

    Water distribution systems are typically a municipality's largest consumer of energy and greatest expense. The water distribution network has varying pressure requirements due to the age of the pipeline and topographical differences. Certain circumstances require installation of pressure reducing devices in the pipeline to lower the water pressure in the system. The consequence of this action is that the hydraulic energy supplied by the high lift or booster pumps is wasted in the process of reducing the pressure. A possible solution to capture the waste hydraulic energy is to install an in-line electricity generating turbine. Energy recovery using in-line turbine systems is an emerging technology. Due to the lack of technical and other relevant information on in-line turbine system installations, questions of constructability and legal issues over the power service contract have yet to be answered. This study seeks to resolve these questions and document the findings so that other communities may utilize this information. 10 figs.

  1. Speech recovery device

    DOE Patents [OSTI]

    Frankle, Christen M.

    2004-04-20T23:59:59.000Z

    There is provided an apparatus and method for assisting speech recovery in people with inability to speak due to aphasia, apraxia or another condition with similar effect. A hollow, rigid, thin-walled tube with semi-circular or semi-elliptical cut out shapes at each open end is positioned such that one end mates with the throat/voice box area of the neck of the assistor and the other end mates with the throat/voice box area of the assisted. The speaking person (assistor) makes sounds that produce standing wave vibrations at the same frequency in the vocal cords of the assisted person. Driving the assisted person's vocal cords with the assisted person being able to hear the correct tone enables the assisted person to speak by simply amplifying the vibration of membranes in their throat.

  2. Waste Steam Recovery

    E-Print Network [OSTI]

    Kleinfeld, J. M.

    1979-01-01T23:59:59.000Z

    .15 Jet Ejector - 165 p~ia Saturated Motive (965 psia/925?F) JO 2].22 2].]0 23.35 35 23. 22 23.]0 23.35 45 23.22 23.]0 23.35 ($2.l2/MM Btu fuel, 85% boiler efficiency,) 55 23.22 23.30 2].]5 ., 23. 22 23. )0 2].35 80 23. 22 23. JO 23. ]5 1243... technique, and the costs of fuel and electrical power. If turbine flows are unaffected so that no by-product power generation is lost, direct exchange to process and jet ejector compression will always yield an energy profit. Recovery via mechanical...

  3. Energy recovery system

    DOE Patents [OSTI]

    Moore, Albert S. (Morgantown, WV); Verhoff, Francis H. (Morgantown, WV)

    1980-01-01T23:59:59.000Z

    The present invention is directed to an improved wet air oxidation system and method for reducing the chemical oxygen demand (COD) of waste water used from scrubbers of coal gasification plants, with this COD reduction being sufficient to effectively eliminate waste water as an environmental pollutant. The improvement of the present invention is provided by heating the air used in the oxidation process to a temperature substantially equal to the temperature in the oxidation reactor before compressing or pressurizing the air. The compression of the already hot air further heats the air which is then passed in heat exchange with gaseous products of the oxidation reaction for "superheating" the gaseous products prior to the use thereof in turbines as the driving fluid. The superheating of the gaseous products significantly minimizes condensation of gaseous products in the turbine so as to provide a substantially greater recovery of mechanical energy from the process than heretofore achieved.

  4. Enhanced oil recovery system

    DOE Patents [OSTI]

    Goldsberry, Fred L. (Spring, TX)

    1989-01-01T23:59:59.000Z

    All energy resources available from a geopressured geothermal reservoir are used for the production of pipeline quality gas using a high pressure separator/heat exchanger and a membrane separator, and recovering waste gas from both the membrane separator and a low pressure separator in tandem with the high pressure separator for use in enhanced oil recovery, or in powering a gas engine and turbine set. Liquid hydrocarbons are skimmed off the top of geothermal brine in the low pressure separator. High pressure brine from the geothermal well is used to drive a turbine/generator set before recovering waste gas in the first separator. Another turbine/generator set is provided in a supercritical binary power plant that uses propane as a working fluid in a closed cycle, and uses exhaust heat from the combustion engine and geothermal energy of the brine in the separator/heat exchanger to heat the propane.

  5. Control of strain in GaN by a combination of H{sub 2} and N{sub 2} carrier gases

    SciTech Connect (OSTI)

    Yamaguchi, Shigeo; Kariya, Michihiko; Kosaki, Masayoshi; Yukawa, Yohei; Nitta, Shugo; Amano, Hiroshi; Akasaki, Isamu

    2001-06-15T23:59:59.000Z

    We study the effect of a combination of N{sub 2} and H{sub 2} carrier gases on the residual strain and crystalline properties of GaN, and we propose its application to the improvement of crystalline quality of GaN/Al{sub 0.17}Ga{sub 0.83}N multiple quantum well (MQW) structures. GaN was grown with H{sub 2} or N{sub 2} carrier gas (H{sub 2}{endash} or N{sub 2}{endash}GaN) on an AlN low-temperature-deposited buffer layer. A (0001) sapphire substrate was used. N{sub 2}{endash}GaN was grown on H{sub 2}{endash}GaN. The total thickness was set to be 1.5 {mu}m, and the ratio of N{sub 2}{endash}GaN thickness to the total thickness, x, ranged from 0 to 1. With increasing x, the tensile stress in GaN increased. Photoluminescence intensity at room temperature was much enhanced. Moreover, the crystalline quality of GaN/Al{sub 0.17}Ga{sub 0.83}N MQW was much higher when the MQW was grown with N{sub 2} on H{sub 2}{endash}GaN than when it was grown with H{sub 2} on H{sub 2}{endash}GaN. These results were due to the achievement of control of strain in GaN using a combination of N{sub 2}{endash}GaN and H{sub 2}{endash}GaN. {copyright} 2001 American Institute of Physics.

  6. Why Do Kraft Recovery Boiler Composite Floor Tubes Crack?

    SciTech Connect (OSTI)

    Keiser, J.R.

    2001-10-22T23:59:59.000Z

    Cracks were first reported in 1992 in co-extruded 304L stainless steel/SA210 Gd Al carbon steel floor tubes of North American black liquor recovery boilers. Since then, a considerable amount of information has been collected on the tube environment, crack characteristics, the stress state of the tubes, and the crack initiation and propagation mechanisms. These studies have identified both operating procedures that apparently can greatly lessen the likelihood of crack formation in the stainless steel layer and alternate materials that appear to be much more resistant to cracking than is 304L stainless.

  7. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23T23:59:59.000Z

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  8. Hurricane Disturbance Alters Secondary Forest Recovery in Puerto Rico Dan F.B. Flynn1,7

    E-Print Network [OSTI]

    Uriarte, Maria

    Hurricane Disturbance Alters Secondary Forest Recovery in Puerto Rico Dan F.B. Flynn1,7 , Mar, Statesboro, GA 30460, U.S.A. 4 Institute for Tropical Ecosystem Studies, University of Puerto Rico, San Juan, Puerto Rico 00931, U.S.A. 5 Department of Biology, University of Puerto Rico, San Juan, Puerto Rico 00931

  9. Optimize carbon dioxide sequestration, enhance oil recovery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Optimize carbon dioxide sequestration, enhance oil recovery Optimize carbon dioxide sequestration, enhance oil recovery The simulation provides an important approach to estimate...

  10. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01T23:59:59.000Z

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  11. American Academy of Sleep Medicine American Academy of Sleep Medicine

    E-Print Network [OSTI]

    Goldman, Steven A.

    © American Academy of Sleep Medicine American Academy of Sleep Medicine The following product has been developed by the American Academy of Sleep Medicine Copyright © 2003 American Academy of Sleep: (708) 492-0943 Visit Us at www.aasmnet.org #12;© American Academy of Sleep Medicine American Academy

  12. AlGaAs/InGaAs/AlGaAs Double Barrier

    E-Print Network [OSTI]

    Perera, A. G. Unil

    -state Er. Tunneling Quantum Dot Sensors for Multi-band Infrared and Terahertz Radiation Detection G radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due

  13. Wastewater heat recovery apparatus

    DOE Patents [OSTI]

    Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

    1992-01-01T23:59:59.000Z

    A heat recovery system with a heat exchanger and a mixing valve. A drain trap includes a heat exchanger with an inner coiled tube, baffle plate, wastewater inlet, wastewater outlet, cold water inlet, and preheated water outlet. Wastewater enters the drain trap through the wastewater inlet, is slowed and spread by the baffle plate, and passes downward to the wastewater outlet. Cold water enters the inner tube through the cold water inlet and flows generally upward, taking on heat from the wastewater. This preheated water is fed to the mixing valve, which includes a flexible yoke to which are attached an adjustable steel rod, two stationary zinc rods, and a pivoting arm. The free end of the arm forms a pad which rests against a valve seat. The rods and pivoting arm expand or contract as the temperature of the incoming preheated water changes. The zinc rods expand more than the steel rod, flexing the yoke and rotating the pivoting arm. The pad moves towards the valve seat as the temperature of the preheated water rises, and away as the temperature falls, admitting a variable amount of hot water to maintain a nearly constant average process water temperature.

  14. Wastewater heat recovery apparatus

    DOE Patents [OSTI]

    Kronberg, J.W.

    1992-09-01T23:59:59.000Z

    A heat recovery system is described with a heat exchanger and a mixing valve. A drain trap includes a heat exchanger with an inner coiled tube, baffle plate, wastewater inlet, wastewater outlet, cold water inlet, and preheated water outlet. Wastewater enters the drain trap through the wastewater inlet, is slowed and spread by the baffle plate, and passes downward to the wastewater outlet. Cold water enters the inner tube through the cold water inlet and flows generally upward, taking on heat from the wastewater. This preheated water is fed to the mixing valve, which includes a flexible yoke to which are attached an adjustable steel rod, two stationary zinc rods, and a pivoting arm. The free end of the arm forms a pad which rests against a valve seat. The rods and pivoting arm expand or contract as the temperature of the incoming preheated water changes. The zinc rods expand more than the steel rod, flexing the yoke and rotating the pivoting arm. The pad moves towards the valve seat as the temperature of the preheated water rises, and away as the temperature falls, admitting a variable amount of hot water to maintain a nearly constant average process water temperature. 6 figs.

  15. High efficiency InGaAs solar cells on Si by InP layer transfer James M. Zahler

    E-Print Network [OSTI]

    Atwater, Harry

    to significantly increase performance while reducing the cost and weight of compound semiconductor solar cellsHigh efficiency InGaAs solar cells on Si by InP layer transfer James M. Zahler Aonex Technologies for solar cell applications. © 2007 American Institute of Physics. DOI: 10.1063/1.2753751 Engineered

  16. Thermal conductivity of GaN films: Effects of impurities and dislocations J. Zou, D. Kotchetkov, and A. A. Balandina)

    E-Print Network [OSTI]

    be used for accurate simulation of self-heating effects in GaN-based devices. © 2002 American Institute high density of excess heat from the device active area. Self- heating strongly affects the performance, and A. A. Balandina) Department of Electrical Engineering, University of California at Riverside

  17. DOE Announces Selections for Solid-State Lighting Core Technology...

    Broader source: Energy.gov (indexed) [DOE]

    OLEDs with longer lifetimes. Recipient: Sandia National Laboratories Title: Semi-polar GaN Materials Technology for High IQE Green LEDs Funding Source: American Recovery and...

  18. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells...

  19. Heat Recovery from Coal Gasifiers

    E-Print Network [OSTI]

    Wen, H.; Lou, S. C.

    1981-01-01T23:59:59.000Z

    This paper deals with heat recovery from pressurized entrained and fixed bed coal gasifiers for steam generation. High temperature waste heat, from slagging entrained flow coal gasifier, can be recovered effectively in a series of radiant...

  20. Recovery and purification of ethylene

    DOE Patents [OSTI]

    Reyneke, Rian (Katy, TX); Foral, Michael J. (Aurora, IL); Lee, Guang-Chung (Houston, TX); Eng, Wayne W. Y. (League City, TX); Sinclair, Iain (Warrington, GB); Lodgson, Jeffery S. (Naperville, IL)

    2008-10-21T23:59:59.000Z

    A process for the recovery and purification of ethylene and optionally propylene from a stream containing lighter and heavier components that employs an ethylene distributor column and a partially thermally coupled distributed distillation system.

  1. RMOTC - Testing - Enhanced Oil Recovery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enhanced Oil Recovery Notice: As of July 1st, 2014, Testing at RMOTC has officially completed. We would like to thank all of our testing partners and everyone who helped make the...

  2. Low Level Heat Recovery Technology

    E-Print Network [OSTI]

    O'Brien, W. J.

    1982-01-01T23:59:59.000Z

    level heat recovery technology. This paper discusses heat distribution systems, latest developments in absorption refrigeration and organic Rankine cycles, and pressure, minimization possibilities. The relative merits and economics of the various...

  3. Waste Heat Recovery from Refrigeration

    E-Print Network [OSTI]

    Jackson, H. Z.

    1982-01-01T23:59:59.000Z

    heat recovery from refrigeration machines is a concept which has great potential for implementation in many businesses. If a parallel requirement for refrigeration and hot water exists, the installation of a system to provide hot water as a by...

  4. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

    2010-10-14T23:59:59.000Z

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  5. PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS

    E-Print Network [OSTI]

    McCluskey, Matthew

    -µm thick GaN layer deposited on a sapphire substrate, and it is capped by a 0.2-µm GaN:Mg pPRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS W. Shan,* J.W. Ager pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied

  6. Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1

    E-Print Network [OSTI]

    As, Donat Josef

    ) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN

  7. A Desk Guide to Buy American Provisions of the American Recovery and Reinvestment Act of 2009

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny: The Future of BadTHEEnergyReliability2015Gross Gamma-RayDesign-Builder'sP a g

  8. Developing a Regional Recovery Framework

    SciTech Connect (OSTI)

    Lesperance, Ann M.; Olson, Jarrod; Stein, Steven L.; Clark, Rebecca; Kelly, Heather; Sheline, Jim; Tietje, Grant; Williamson, Mark; Woodcock, Jody

    2011-09-01T23:59:59.000Z

    Abstract A biological attack would present an unprecedented challenge for local, state, and federal agencies; the military; the private sector; and individuals on many fronts ranging from vaccination and treatment to prioritization of cleanup actions to waste disposal. To prepare the Seattle region to recover from a biological attack, the Seattle Urban Area Security Initiative (UASI) partners collaborated with military and federal agencies to develop a Regional Recovery Framework for a Biological Attack in the Seattle Urban Area. The goal was to reduce the time and resources required to recover and restore wide urban areas, military installations, and other critical infrastructure following a biological incident by providing a coordinated systems approach. Based on discussions in small workshops, tabletop exercises, and interviews with emergency response agency staff, the partners identified concepts of operation for various areas to address critical issues the region will face as recovery progresses. Key to this recovery is the recovery of the economy. Although the Framework is specific to a catastrophic, wide-area biological attack using anthrax, it was designed to be flexible and scalable so it could also serve as the recovery framework for an all-hazards approach. The Framework also served to coalesce policy questions that must be addressed for long-term recovery. These questions cover such areas as safety and health, security, financial management, waste management, legal issues, and economic development.

  9. InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular; accepted 17 November 1995 The growth and device characterization of an InGaP/GaAs double-quality phosphorus-containing compounds.1­4 The growth of high-performance InGaP/ GaAs and InGaAs/InP single

  10. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-10T23:59:59.000Z

    The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.

  11. Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

    E-Print Network [OSTI]

    Sirenko, Andrei

    Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well MQW structures grown on the sidewalls of 10- m-wide triangular GaN ridges with 1-1.1 facets. Samples were produced

  12. GaN0.011P0.989–GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

    E-Print Network [OSTI]

    Tu, Charles W

    2000-01-01T23:59:59.000Z

    and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)

  13. Recovery Act State Memos Wisconsin

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and limit carbon pollution. 11.4 million American Transmission Company LLC was awarded a Smart Grid Investment Grant for 11.4 million. The funds will be used to expand a fiber...

  14. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.

    2000-01-11T23:59:59.000Z

    The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.

  15. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Mazumder, B.; Hurni, C. A.; Zhang, J. Y.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, M. H.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2012-08-27T23:59:59.000Z

    In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.

  16. Middle Class and Middle School: Does Opportunity Knock for African American Students?

    E-Print Network [OSTI]

    Mooney, Patricia 1960-

    2012-12-10T23:59:59.000Z

    the shortcomings in NCLB (2001), President Barack Obama signed The American Recovery and Reinvestment Act (ARRA) into law. Race to the Top (RTTT) was established by the AARA as a competitive grant program to encourage and reward States to participate...MIDDLE CLASS AND MIDDLE SCHOOL: DOES OPPORTUNITY KNOCK FOR AFRICAN AMERICAN STUDENTS? A Record of Study by Patricia Ann Mooney Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment...

  17. Shock recovery experiments: An assessment

    SciTech Connect (OSTI)

    Gray, G.T. III

    1989-01-01T23:59:59.000Z

    Systematic shock recovery experiments, in which microstructural and mechanical property effects are characterized quantitatively, constitute an important means of increasing our understanding of shock processes. Through studies of the effects of variations in metallurgical and shock loading parameters on structure/property relationships, the micromechanisms of shock deformation, and how they differ from conventional strain rate processes, are beginning to emerge. This paper will highlight the state-of-the-art in shock recovery of metallic and ceramic materials. Techniques will be described which are utilized to ''soft'' recover shock-loaded metallic samples possessing low residual strain; crucial to accurate ''post-mortem'' metallurgical investigations of the influence of shock loading on material behavior. Illustrations of the influence of shock assembly design on the structure/property relationships in shock-recovered copper samples including such issues as residual strain and contact stresses, and their consequences are discussed. Shock recovery techniques used on brittle materials will be reviewed and discussed in light of recent experimental results. Finally, shock recovery structure/property results and VISAR data on the /alpha/--/omega/ shock-induced phase transition in titanium will be used to illustrate the beneficial link between shock recovery and ''real-time'' shock data. 26 refs., 3 figs.

  18. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  19. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Logo GaN nanowires show more 3D piezoelectricity than bulk GaN admin / January 11, 2012 individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D. This is in spite of the fact that each nanowire only measures 100nm in diameter. While GaN is ubiquitous in optoelectronic

  20. Self-aligned AlGaN/GaN transistors for sub-mm wave applications

    E-Print Network [OSTI]

    Saadat, Omair I

    2010-01-01T23:59:59.000Z

    This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

  1. Invited Paper GaN HEMT reliability

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Invited Paper GaN HEMT reliability J.A. del Alamo *, J. Joh Microsystems Technology Laboratories mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier

  2. DOE Policy Re Recovery Act Recipient Use of Recovery Act Logos on Signage

    Broader source: Energy.gov [DOE]

    U.S. Department of Energy (“DOE”) policy regarding use of the Recovery Act logo by Recovery Act recipients and subgrantees.

  3. New Impetus for resource recovery

    SciTech Connect (OSTI)

    Marier, D.

    1990-04-01T23:59:59.000Z

    Indications are that the resource recovery field is getting a renewed focus as communities again respond to continuing waste problems and as more companies offer recycling and waste-to-energy services. Recent entries to the field include new divisions of an Australian firm, a Finnish environmental services company, an Italian tire recycler. Two utility affiliates have entered the resource recovery field, and one major engineering and construction firm is entering the field at the same time another is leaving. These companies and their waste processes are briefly described.

  4. Recovery Act | Department of Energy

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 1112011 Strategic2 OPAM615_CostNSAR -Department of Energy Recovery ActCategoryRecovery Act

  5. Road to Recovery: Bringing Recovery to Small Town America

    ScienceCinema (OSTI)

    Nettamo, Paivi

    2012-06-14T23:59:59.000Z

    The Recovery Act hits the road to reach out to surrounding towns of the Savannah River Site that are struggling with soaring unemployment rates. This project helps recruit thousands of people to new jobs in environmental cleanup at the Savannah River Site.

  6. Road to Recovery: Bringing Recovery to Small Town America

    SciTech Connect (OSTI)

    Nettamo, Paivi

    2010-01-01T23:59:59.000Z

    The Recovery Act hits the road to reach out to surrounding towns of the Savannah River Site that are struggling with soaring unemployment rates. This project helps recruit thousands of people to new jobs in environmental cleanup at the Savannah River Site.

  7. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  8. SEMI-AUTOMATED LAB-ON-A-CHIP FOR DISPENSING GA-68 RADIOTRACERS

    SciTech Connect (OSTI)

    Weinberg, Irving

    2014-03-12T23:59:59.000Z

    We solved a technical problem that is hindering American progress in molecular medicine, and restricting US citizens from receiving optimal diagnostic care. Specifically, the project deals with a mother/daughter generator of positron-emitting radiotracers (Ge-68/Ga-68). These generator systems are approved in Europe but cannot be used in the USA, because of safety issues related to possible breakthrough of long-lived Ge-68 (mother) atoms. Europeans have demonstrated abilities of Ga-68-labeled radiotracers to image cancer foci with high sensitivity and specificity, and to use such methods to effectively plan therapy. The USA Food and Drug Administration (FDA) and Nuclear Regulatory Commission (NRC) have taken the position that every patient administration of Ga-68 should be preceded by an assay demonstrated that Ge-68 breakthrough is within acceptable limits. Breakthrough of parent elements is a sensitive subject at the FDA, as evidenced by the recent recall of Rb-82 generators due to inadvertent administrations of Sr-82. Commercially, there is no acceptable rapid method for assaying breakthrough of Ge-68 prior to each human administration. The gamma emissions of daughter Ga-68 have higher energies than the parent Ge-68, so that the shielding assays typically employed for Mo-99/Tc-99m generators cannot be applied to Ga-68 generators. The half-life of Ga-68 is 68 minutes, so that the standard 10-half-life delay (used to assess breakthrough in Sr-82/Rb-82 generators) cannot be applied to Ga-68 generators. As a result of the aforementioned regulatory requirements, Ga-68 generators are sold in the USA for animal use only. The American clinical community’s inability to utilize Ga-68 generators impairs abilities to treat patients domestically, and puts the USA at a disadvantage in developing exportable products. The proposed DOE project aimed to take advantage of recent technological advances developed for lab-on-a-chip (LOC) applications. Based on our experiences constructing such devices, the proposed microfluidics-based approach could provide cost-effective validation of breakthrough compliance in minutes.

  9. InAs=InGaP=GaAs heterojunction power Schottky rectifiers

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InAs=InGaP=GaAs heterojunction power Schottky rectifiers A. Chen, M. Young and J.M. Woodall A low-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier

  10. Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs Rajkumar Santhakumar, Yi have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. Index Terms -- GaN

  11. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

    E-Print Network [OSTI]

    Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Qimin Yan,1,a Patrick November 2010 The effect of strain on the valence-band structure of 112¯2 semipolar InGaN grown on GaN D6 is calculated for GaN and InN using density functional theory with the Heyd­Scuseria­ Ernzerhof

  12. GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges

    E-Print Network [OSTI]

    Perera, A. G. Unil

    GaN/AlGaN heterojunction infrared detector responding in 8­14 and 20­70 m ranges G. Ariyawansa, M October 2006 A GaN/AlGaN heterojunction interfacial work function internal photoemission infrared detector, the work demonstrates 54 m 5.5 THz operation of the detector based on 1s­2p± transition of Si donors in GaN

  13. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  14. american raptor american: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    K 1998-01-01 163 Socioeconomic Characteristics of American Indians in Los Angeles County University of California eScholarship Repository Summary: American Indians is critical...

  15. AMERICAN ANTHROPOLOGIST Public Anthropology

    E-Print Network [OSTI]

    Illinois at Chicago, University of

    AMERICAN ANTHROPOLOGIST Public Anthropology 2012 Public Anthropology Year in Review: Actually, Rick a torrent of criticism from anthropologists, including an online response by #12;Year in Review: Public

  16. Native American Heritage Month

    Broader source: Energy.gov [DOE]

    This month, we celebrate the rich heritage and myriad contributions of American Indians and Alaska Natives, and we rededicate ourselves to supporting tribal sovereignty, tribal self-determination,...

  17. Biosurfactant and enhanced oil recovery

    DOE Patents [OSTI]

    McInerney, Michael J. (Norman, OK); Jenneman, Gary E. (Norman, OK); Knapp, Roy M. (Norman, OK); Menzie, Donald E. (Norman, OK)

    1985-06-11T23:59:59.000Z

    A pure culture of Bacillus licheniformis strain JF-2 (ATCC No. 39307) and a process for using said culture and the surfactant lichenysin produced thereby for the enhancement of oil recovery from subterranean formations. Lichenysin is an effective surfactant over a wide range of temperatures, pH's, salt and calcium concentrations.

  18. Precedents in African American architecture

    E-Print Network [OSTI]

    Sass, Lawrence

    1994-01-01T23:59:59.000Z

    As a sub-sets of American culture, African Americans have not been able to offer culturally specific architectural elements to the design process because the history of African American form and space has not been recognized ...

  19. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

    SciTech Connect (OSTI)

    Chen, Z.; Denbaars, S. P. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Keller, S.; Mishra, U. K. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chung, R.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-03-16T23:59:59.000Z

    Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm{sup 2}/V s. High electron mobility transistors (HEMTs) with 0.65 {mu}m long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

  20. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Huajie Chen, Kista, Sweden Abstract Strain-compensated InGaAsP/InGaP superlattices are studied in cross- section. The strain compensated InGaAsP/InGaP/InP superlattices studied here have application for light sources

  1. AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN

  2. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  3. In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a

    E-Print Network [OSTI]

    Yang, Kyounghoon

    205 Abstract In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device basedBm at 2 GHz have been demonstrated from the fabricated device. 1. Introduction In recent years, AlGaN/GaN noise amplifier and switch. Superior results have been reported in microwave power performance of AlGaN/GaN

  4. A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate

  5. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate,

    E-Print Network [OSTI]

    Boyer, Edmond

    Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Aristide Briand, 92.195 Meudon, France Abstract. Wide bandgap devices such as AlGaN/GaN High Electron of GR- bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR

  6. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2012-12-24T23:59:59.000Z

    Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

  7. Renewable energy plan of action for American Samoa

    SciTech Connect (OSTI)

    Shupe, J.W. (USDOE San Francisco Operations Office, Honolulu, HI (USA). Pacific Site Office); Stevens, J.W. (Sandia National Labs., Albuquerque, NM (USA))

    1990-11-01T23:59:59.000Z

    American Samoa has no indigenous fossil fuels and is almost totally dependent for energy on seaborne petroleum. However, the seven Pacific Islands located at 14 degrees south latitude that constitute American Samoa have a wide variety of renewable resources with the potential for substituting for imported oil. Included as possible renewable energy conversion technologies are solar thermal, photovoltaics, wind, geothermal, ocean thermal, and waste-to-energy recovery. This report evaluates the potential of each of these renewable energy alternatives and establishes recommended priorities for their development in American Samoa. Rough cost estimates are also included. Although renewable energy planning is highly site specific, information in this report should find some general application to other tropical insular areas.

  8. Quantifying Vegetation Recovery on Santa Rosa Island

    E-Print Network [OSTI]

    Rentschlar, Elizabeth

    2014-12-09T23:59:59.000Z

    The rate of recovery on barrier islands after hurricanes is not well understood, because the majority of studies have focused on the geomorphic impact of storms on barrier islands. Dune vegetation recovery is a vital component of barrier island...

  9. Sandia National Laboratories: Recovery Act (ARRA) Projects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    with: ARRA * awardees * contractors * DOE * Energy * Grid Integration * Partnership * photovoltaic * Photovoltaics * PV * Recovery Act * reliability * Renewable Energy * SAND...

  10. GaSb based ternary and quaternary diffused junction devices for TPV applications

    SciTech Connect (OSTI)

    Sundaram, V.S.; Saban, S.B.; Morgan, M.D.; Horne, W.E.; Evans, B.D.; Ketterl, J.R. [EDTEK Inc. 7082 S. 220th Street Kent, Washington 98032 (United States); Morosini, M.B.; Patel, N.B. [Instituto de Fisica, UNICAMP, Campinas, Brasil (Brazil); Field, H. [NREL, Golden, Colorado (United States)

    1997-03-01T23:59:59.000Z

    In this work we report the characteristics of ternary, GaInSb (Eg=0.70eV) and quarternary, GaInAsSb (Eg=0.5eV) diffused junction photovoltaic devices. The unique feature of the quarternary device is the extended long-wavelength response to 2.1 microns enabling the efficient use of the blackbody-like thermal sources operating at 1373 K in thermophotovoltaic energy conversion systems. The ternary device was fabricated by diffusing zinc into a n-type (100) oriented GaInSb substrate. For the quarternary, a four micron thick Te doped GaInAsSb layer grown by LPE on a n-type GaSb(100) wafer was used as the starting substrate for zinc diffusion. The ternary device exhibits an open circuit voltage of 0.38 V, Fill Factor of 0.63 and a short circuit current of 0.8A/cm{sup 2}, while the corresponding values for the quarternary device are 0.25 V, 0.58 and 0.8A/cm{sup 2}, respectively. The peak internal quantum efficiency for the ternary is over 90{percent} and that of the quarternary is above 75{percent}. Process optimization should improve the performance charcateristics of the quarternary. {copyright} {ital 1997 American Institute of Physics.}

  11. Comparison of plasma chemistries for inductively coupled plasma etching of InGaAlP alloys

    SciTech Connect (OSTI)

    Hong, J.; Lee, J.W.; Abernathy, C.R.; Lambers, E.S.; Pearton, S.J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Shul, R.J. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Hobson, W.S. [Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)] [Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)

    1998-05-01T23:59:59.000Z

    Two plasma chemistries, i.e., CH{sub 4}/H{sub 2}/Ar and Cl{sub 2}/Ar, were compared for the etching of InGaP, AlInP, and AlGaP under inductively coupled plasma (ICP) conditions. While the etching with CH{sub 4}/H{sub 2}/Ar discharges appears to be ion driven, Cl{sub 2}/Ar discharges showed an additional strong chemical enhancement. The highest etch rate ({approximately}1 {mu}m/min) for InGaP was achieved at high ICP source power ({ge}750 W) with the Cl{sub 2}/Ar chemistry. Cl{sub 2}/Ar discharges provided very smooth surfaces in all three materials with root-mean-square roughness measured by atomic force microscopy around 2 nm. This result may be due to the efficient ion-assisted product desorption in this chemistry. The etched near-surface region of InGaP ({approximately}100 {Angstrom}) with Cl{sub 2}/Ar maintained almost the same stoichiometry as that of the unetched control. By contrast, the CH{sub 4}/H{sub 2}/Ar plasma chemistry produced somewhat rougher surfaces and depletion of phosphorous (P) from the surface of InGaP. {copyright} {ital 1998 American Vacuum Society.}

  12. High efficiency InGaP solar cells for InGaP/GaAs tandem cell application

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H.; Ohmori, M. [Japan Energy Corp., Toda, Saitama (Japan). Central Research Lab.

    1994-12-31T23:59:59.000Z

    In this paper, high conversion efficiency single junction InGaP solar cells with n-p-p{sup +} structure are presented and their application to InGaP/GaAs monolithic tandem cells is discussed. In the InGaP cells, a best conversion efficiency of 18.48% was achieved by introducing the p{sup +} peak back surface field (BSF) layer with a high carrier concentration of 2 {times} 10{sup 18} cm{sup {minus}3}, which improved both short circuit current (Isc) and open circuit voltage (Voc). However, in the case of InGaP/GaAs tandem cells, a decrease in carrier concentration of the InGaP BSF layer, which was caused by the diffusion of Zn, was found to reduce the Isc and Voc of the tandem cell. The reduction in the carrier concentration was suppressed by using a thicker BSF layer of 0.5 {micro}m, which reduced the current density in the GaAs bottom cell. An InGaP/GaAs tandem cell with 27.3% efficiency and a high Voc of 2.418 V was obtained.

  13. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

    E-Print Network [OSTI]

    Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP

  14. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates

    E-Print Network [OSTI]

    Manfra, Michael J.

    PS-4 AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates Nils ABSTRACT Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established, and HVPE SI-GaN templates on sapphire. While sapphire and SI-Sic are established substrates for the growth

  15. ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    MOSCAP process ?ow: n-GaN substrate; Ohmic metallization andtion for a AlGaN/ GaN HEMT on a substrate which has a poorsapphire substrate, a well-passivated AlGaN/ GaN HEMT grown

  16. (Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2002. Two companies in

    E-Print Network [OSTI]

    and Use: No domestic primary gallium recovery was reported in 2002. Two companies in Oklahoma and Utah diodes, photodetectors, and solar cells. Integrated circuits represented 65% of gallium demand forecasts of market growth, several companies were consolidating, reducing, or eliminating their Ga

  17. Green light emission by InGaN/GaN multiple-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)] [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Hsu, Gary Z. L. [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)] [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)

    2014-03-10T23:59:59.000Z

    The high-quality In{sub x}Ga{sub 1?x}N/GaN multiple quantum wells were grown on GaN microdisks with ?-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1?x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192?eV) emitted from the In{sub x}Ga{sub 1?x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383?eV) from GaN.

  18. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  19. Recovery Act ? An Interdisciplinary Program for Education and...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Recovery Act An Interdisciplinary Program for Education and Outreach in Transportation Electrification Recovery Act An Interdisciplinary...

  20. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Agui, T. [Japan Energy Corp., Toda, Saitama (Japan)] [and others

    1997-12-31T23:59:59.000Z

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  1. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20T23:59:59.000Z

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  2. Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

    SciTech Connect (OSTI)

    Roul, Basanta; Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Kalghatgi, A. T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Kumar, Nitesh; Sundaresan, A. [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)

    2011-10-17T23:59:59.000Z

    We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

  3. Characterization of catastrophic optical damage in Al-free InGaAs/InGaP 0.98 {mu}m high-power lasers

    SciTech Connect (OSTI)

    Park, K.H.; Lee, J.K.; Jang, D.H.; Cho, H.S.; Park, C.S.; Pyun, K.E. [Compound Semiconductor Research Department, Electronics and Telecommunications Research Institute, Yusong P.O. Box 106, Taejon 305-600 (Korea)] [Compound Semiconductor Research Department, Electronics and Telecommunications Research Institute, Yusong P.O. Box 106, Taejon 305-600 (Korea); Jeong, J.Y. [Department of Radio Engineering, Korea University, 5-1 Ka, Anam-Dong, Sungbuk-ku, Seoul 136-701 (Korea)] [Department of Radio Engineering, Korea University, 5-1 Ka, Anam-Dong, Sungbuk-ku, Seoul 136-701 (Korea); Nahm, S. [Department of Material Science and Engineering, Korea University, 5-1 Ka, Anam-Dong, Sungbuk-ku, Seoul 136-701 (Korea)] [Department of Material Science and Engineering, Korea University, 5-1 Ka, Anam-Dong, Sungbuk-ku, Seoul 136-701 (Korea); Jeong, J. [Department of Radio Engineering, Korea University, 5-1 Ka, Anam-Dong, Sungbuk-ku, Seoul 136-701 (Korea)] [Department of Radio Engineering, Korea University, 5-1 Ka, Anam-Dong, Sungbuk-ku, Seoul 136-701 (Korea)

    1998-11-01T23:59:59.000Z

    Catastrophic optical damage (COD) in Al-free InGaAs/InGaP 0.98 {mu}m lasers has been investigated using real-time electroluminescence (EL) and transmission electron microscopy (TEM). From EL images, we observed that multiple bright spots initiated from one of the facets and then propagated to the center of the cavity during the COD process. It is clarified by the TEM analysis that the propagation of bright spots resulted in 60-nm-wide Moir{acute e} fringe along the cavity and the crystalline phase of the active area became polycrystalline. Highly nonradiative polycrystalline phase of the active area is the major cause of COD failure in the Al-free 0.98 {mu}m lasers. {copyright} {ital 1998 American Institute of Physics.}

  4. Smithsonian American Art Museum INVENTORIES OF AMERICAN PAINTING AND SCULPTURE

    E-Print Network [OSTI]

    Mathis, Wayne N.

    Smithsonian American Art Museum INVENTORIES OF AMERICAN PAINTING AND SCULPTURE GUIDELINES FOR REPORTING WORKS The INVENTORIES OF AMERICAN PAINTING AND SCULPTURE were created by the Smithsonian American collections around the country. The database for the Inventories references over 360,000 works from two

  5. Engine breather oil recovery system

    SciTech Connect (OSTI)

    Speer, S.R.; Norton, J.G.; Wilson, J.D.

    1990-08-14T23:59:59.000Z

    This patent describes an engine breather oil recovery system, for use with reciprocating engines having an oil breather and an oil reservoir recovery system. It comprises:an engine breather outlet from the engine; a vapor and oil separator device in fluid flow connection with the engine breather outlet; a motive flow suction means in fluid flow connection between the separator device and the engine, so as to provide a substantially continuous pressure drop between the separator device and the engine oil reservoir; an engine fluid system in parallel with the separator device; and an engine driven pump in fluid flow connection with such other engine fluid system, wherein the motive force for the motive flow suction means is provided by the fluid from the engine pump.

  6. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  7. Counterpulse railgun energy recovery circuit

    DOE Patents [OSTI]

    Honig, Emanuel M. (Los Alamos, NM)

    1986-01-01T23:59:59.000Z

    In an electromagnetic launcher such as a railgun for propelling a projectile at high velocity, a counterpulse energy recovery circuit is employed to transfer stored inductive energy from a source inductor to the railgun inductance to propel the projectile down the railgun. Switching circuitry and an energy transfer capacitor are used to switch the energy back to the source inductor in readiness for a repetitive projectile propelling cycle.

  8. Overpulse railgun energy recovery circuit

    DOE Patents [OSTI]

    Honig, Emanuel M. (Los Alamos, NM)

    1989-01-01T23:59:59.000Z

    In an electromagnetic launcher such as a railgun for propelling a projectile at high velocity, an overpulse energy recovery circuit is employed to transfer stored inductive energy from a source inductor to the railgun inductance to propel the projectile down the railgun. Switching circuitry and an energy transfer capacitor are used to switch the energy back to the source inductor in readiness for a repetitive projectile propelling cycle.

  9. September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN as etch-stop layer

    E-Print Network [OSTI]

    Pala, Nezih

    0 2 V(V) C(pF) Before etching (material) After etching (device) G AlGaN substrate i-GaN DS AlN AlGaN substrate AlN i-GaN AlGaN S G DAlGaNAlGaN InGaNInGaN Standard gate recess InGaN stop layer gate recess InGaNICNS 7 September 16-21, 2007 ­ Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN

  10. Kraft recovery boiler physical and chemical processes

    SciTech Connect (OSTI)

    Adams, T.N.; Frederick, W.J. (Adams (Terry N.), Tacoma, WA (USA); Oregon State Univ., Corvallis, OR (USA). Dept. of Chemical Engineering)

    1988-01-01T23:59:59.000Z

    The focus of this book is on the recent research into the physical and chemical processes occurring in and around a black liquor recovery boiler. Almost all of the detailed technical information in this book has previously appeared in the open literature. The purpose here is not to present research for the first time, but to present it in a context of the other processes occurring in recovery boilers. Topics covered include: general characteristics of recovery boilers; black liquor thermal and transport properties; black liquor droplet formation and combustion; recovery boiler char bed processes; flow and mixing in Kraft recovery boilers; entrainment and carryover in recovery furnaces; fume formation and dust chemistry; deposits and boiler plugging; and recovery boiler thermal performance. 257 refs., 102 figs., 38 tabs.

  11. AVTA: ChargePoint America Recovery Act Charging Infrastructure Reports

    Broader source: Energy.gov [DOE]

    The Vehicle Technologies Office's Advanced Vehicle Testing Activity carries out testing on a wide range of advanced vehicles and technologies on dynamometers, closed test tracks, and on-the-road. These results provide benchmark data that researchers can use to develop technology models and guide future research and development. The American Recovery and Reinvestment Act supported a number of projects that together made up the largest ever deployment of plug-in electric vehicles and charging infrastructure in the U.S. The following reports describe results of data collected through the Chargepoint America project, which deployed 4,600 public and home charging stations throughout the U.S. This research was conducted by Idaho National Laboratory.

  12. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department March 2005 Titanium dioxide TiO2, with the rutile structure was grown on 0001 oriented GaN and 0001 Al0.33Ga0.67N/GaN heterostructure field effect transistor HFET structures by molecular beam epitaxy. X

  13. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    E-Print Network [OSTI]

    Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial p­i­n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1Àx N/GaN undoped QW system is coated over both

  14. High density plasma damage in InGaP/GaAs as AlGaAs/GaAs high electron mobility transistors

    SciTech Connect (OSTI)

    Lee, J.W.; Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F.; Kopf, R.F.; Kuo, J.M. [Bell Labs., Murray Hill, NJ (United States). Lucent Technologies; Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); Constantine, C.; Johnson, D. [Plasma-Therm Inc., St. Petersburg, FL (United States)

    1998-11-01T23:59:59.000Z

    The introduction of plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors (HEMTs) has been investigated using both inductively coupled plasma and electron cyclotron resonance Ar discharges. The saturated drain-source current is found to be decreased through introduction of compensating deep levels into the InGaP or AlGaAs donor layer. The degradation of device performance is a strong function of ion energy and ion flux, and an advantage of both high density plasma tools is that ion energy can be reduced by increasing the plasma density. Increasing process pressure and source power, and decreasing radio-frequency chuck power produce the lowest amounts of plasma damage in HEMTs.

  15. Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates

    E-Print Network [OSTI]

    Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates, around 104 cm-2 . The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP. High surface roughness and branch defects in Al InGaP lead to the lowest quality virtual substrates we

  16. Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method

    E-Print Network [OSTI]

    Okamoto, Koichi

    Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method; 78.55.Cr; 78.67.De; S7.14 Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using inhomogeneity of In composition. Recently, InGaN/GaN-based light emitting diodes (LEDs) have been commercialized

  17. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

    E-Print Network [OSTI]

    Chung, Jinwook

    We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...

  18. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire...

  19. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

    E-Print Network [OSTI]

    Lu, Bin

    AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...

  20. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  1. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-21T23:59:59.000Z

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1?x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1?y}N templates for x?>?y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1?x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1?y}N template. Growth of the In{sub y}Ga{sub 1?y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1?y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1?x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1?y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

  2. High current gain InGaN=GaN HBTs with C operating temperature

    E-Print Network [OSTI]

    Asbeck, Peter M.

    with an $20 nm low-temperature (Tg ¼ 550 C) GaN buffer layer on a (0001) sapphire substrate. The layer 1018 cmÀ3 Buffer GaN 2.5 mm ­ Substrate Sapphire ­ ­ HBT device processing began by depositing a 100 nmHigh current gain InGaN=GaN HBTs with 300 C operating temperature D.M. Keogh, P.M. Asbeck, T. Chung

  3. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  4. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  5. New plasma chemistries for dry etching of InGaAlP alloys: BI{sub 3} and BBr{sub 3}

    SciTech Connect (OSTI)

    Hong, J.; Cho, H.; Maeda, T.; Abernathy, C.R.; Pearton, S.J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Shul, R.J. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Hobson, W.S. [Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)] [Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)

    1998-09-01T23:59:59.000Z

    Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI{sub 3} or BBr{sub 3} discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates ({gt}6000thinsp{Angstrom}thinspmin{sup {minus}1}) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI{sub 3} or BBr{sub 3} content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO{sub 2} and SiN{sub x} of {ge}8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and AlInP. {copyright} {ital 1998 American Vacuum Society.}

  6. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  7. Immediate Deployment of Waste Energy Recovery Technologies at Multi Sites

    SciTech Connect (OSTI)

    Dennis Castonguay

    2012-06-29T23:59:59.000Z

    Verso Paper Corp. implemented a portfolio of 13 commercially available proven industrial technologies each exceeding 30% minimum threshold efficiency and at least 25% efficiency increase. These sub-projects are a direct result of a grant received from the Department of Energy (DOE) through its FOA 0000044 (Deployment of Combined Heat and Power (CHP) Systems, District Energy Systems, Waste Energy Recovery Systems, and Efficient Industrial Equipment), which was funded by the American Recovery Act. These were installed at 3 sites in 2 states and are helping to reduce Verso costs, making the facilities more competitive. This created approximately 100 construction jobs (FTE's) and reduced impacted Verso facilities' expense budgets. These sub-projects were deployed at Verso paper mills located in Jay, Maine, Bucksport, Maine, and Sartell, Minnesota. The paper mills are the economic engines of the rural communities in which these mills are located. Reinvestment in waste energy recovery capital improvements is providing a stimulus to help maintain domestic jobs and to competitively position the US pulp and paper industry with rising energy costs. Energy efficiency improvements are also providing a positive environmental impact by reducing greenhouse gas emissions, the quantity of wastewater treated and discharged, and fossil fuel demand. As a result of these projects, when fully operating, Verso realized a total of approximately 1.5 TBtu/Year reduction in overall energy consumption, which is 119% of the project objectives. Note that three paper machines have since been permanently curtailed. However even with these shutdowns, the company still met its energy objectives. Note also that the Sartell mill's paper machine is down due to a recent fire which damaged the mill's electrical infrastructure (the company has not decided on the mill's future).

  8. Clean Cities Recovery Act: Vehicle & Infrastructure Deployment...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (GA, AL, SC); Centralina Council of Governments (NC) EV Community Readiness projects: South Florida Regional Planning Council; Virginia Department of Mines, Minerals and Energy...

  9. Moore honored with American Statistical Association award

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    American Statistical Association Award Moore honored with American Statistical Association award Lisa Moore is the recipient of the 2013 Don Owen Award presented by the American...

  10. Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

    SciTech Connect (OSTI)

    Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru; Mushnikov, Nikolai V., E-mail: kleinerman@imp.uran.ru; Stashkova, Liudmila A., E-mail: kleinerman@imp.uran.ru [Institute of Metal Physics UB RAS, S. Kovalevskaya str. 18, 620990 Ekaterinburg (Russian Federation)

    2014-10-27T23:59:59.000Z

    Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mössbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mössbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to enter the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)

  11. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  12. Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots

    E-Print Network [OSTI]

    Fonoberov, Vladimir

    Excitonic properties of strained wurtzite and zinc-blende GaNÕAlxGa1ÀxN quantum dots Vladimir A 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite WZ of GaN QDs.1­8 Molecu- lar beam epitaxial growth in the Stranski­Krastanov mode of wurtzite WZ Ga

  13. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

    E-Print Network [OSTI]

    Feenstra, Randall

    Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices R of Technology, Kista, Sweden Abstract We have investigated the properties of strain-compensated InGaAsP/In- GaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP

  14. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1 , Kristian of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer were exposed to oxygen. True buried heterostructures devices utilising InGaP clad- ding layers have

  15. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates

    E-Print Network [OSTI]

    Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates M. J of unconventional alloys of InGaP with In fraction of 0.2­0.4 grown on fully relaxed GaAsP virtual substrates demonstrate growth of extremely high quality InGaP heterostructures which hold promise for fabrication

  16. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap

  17. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1 G. Ariyawansa,1 online 2 September 2009 A study of trap states in n+ -GaN/AlGaN heterostructures using electrical related absorption centers attributed to shallow Si-donor pinned to the AlGaN barrier , N-vacancy/ C

  18. High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop

    E-Print Network [OSTI]

    Itoh, Tatsuo

    High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers radars and communications systems. GaN-based HEMT's for high power applications at microwave frequencies

  19. The great American garage

    E-Print Network [OSTI]

    Miller, B. Alex (Brian Alex), 1977-

    2004-01-01T23:59:59.000Z

    How does one explore the suburban home? Go in through the garage, of course. Sales, bands, suicides, and business startups: The suburban garage is the most culturally flexible space in the entire American domestic environment. ...

  20. Asian American women entrepreneurs

    E-Print Network [OSTI]

    Suh, Clara J

    2014-01-01T23:59:59.000Z

    There are an estimated 620,300 firms owned by Asian American women nationwide, and they contribute $105 billion to the U.S. economy. They are also active in Greater Boston's innovation and entrepreneurship communities. ...

  1. Recovery from chemical, biological, and radiological incidents :

    SciTech Connect (OSTI)

    Franco, David Oliver; Yang, Lynn I.; Hammer, Ann E.

    2012-06-01T23:59:59.000Z

    To restore regional lifeline services and economic activity as quickly as possible after a chemical, biological or radiological incident, emergency planners and managers will need to prioritize critical infrastructure across many sectors for restoration. In parallel, state and local governments will need to identify and implement measures to promote reoccupation and economy recovery in the region. This document provides guidance on predisaster planning for two of the National Disaster Recovery Framework Recovery Support Functions: Infrastructure Systems and Economic Recovery. It identifies key considerations for infrastructure restoration, outlines a process for prioritizing critical infrastructure for restoration, and identifies critical considerations for promoting regional economic recovery following a widearea disaster. Its goal is to equip members of the emergency preparedness community to systematically prioritize critical infrastructure for restoration, and to develop effective economic recovery plans in preparation for a widearea CBR disaster.

  2. Counterpulse railgun energy recovery circuit

    DOE Patents [OSTI]

    Honig, E.M.

    1984-09-28T23:59:59.000Z

    The invention presented relates to a high-power pulsing circuit and more particularly to a repetitive pulse inductive energy storage and transfer circuit for an electromagnetic launcher. In an electromagnetic launcher such as a railgun for propelling a projectile at high velocity, a counterpulse energy recovery circuit is employed to transfer stored inductive energy from a source inductor to the railgun inductance to propel the projectile down the railgun. Switching circuitry and an energy transfer capacitor are used to switch the energy back to the source inductor in readiness for a repetitive projectile propelling cycle.

  3. Overpulse railgun energy recovery circuit

    DOE Patents [OSTI]

    Honig, E.M.

    1984-09-28T23:59:59.000Z

    The invention presented relates to a high-power pulsing circuit and more particularly to a repetitive pulse inductive energy storage and transfer circuit for an electromagnetic launcher. In an electromagnetic launcher such as a railgun for propelling a projectile at high velocity, an overpulse energy recovery circuit is employed to transfer stored inductive energy from a source inductor to the railgun inductance to propel the projectile down the railgun. Switching circuitry and an energy transfer capacitor are used to switch the energy back to the source inductor in readiness for a repetitive projectile propelling cycle.

  4. Recovery Act State Memos Tennessee

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreakingMay 2015 < prevQuick Guide:U.N.June 8, 2015JuneDepartmentRecovery

  5. Recovery Act | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreakingMay 2015 < prevQuick Guide:U.N.June 8,Past Opportunities » Recovery Act

  6. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Uren, M. J.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Keller, S.; Kolluri, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)

    2014-08-11T23:59:59.000Z

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

  7. Michael J. Poston Atlanta, GA 30307

    E-Print Network [OSTI]

    Orlando, Thomas

    Page | 1 Michael J. Poston Atlanta, GA 30307 Michael.Poston@gatech.edu Cell: 770.561.4756 U.S. Citizen Education PhD Candidate in Chemistry Georgia Institute of Technology, Atlanta, GA August 2007 with Application to Lunar Observations," JGR ­ Planets, 118, 105, doi: 10.1002/jgre.20025. Poston, M. J

  8. Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

    E-Print Network [OSTI]

    Peale, Robert E.

    of materials systems such as GaAs/AlGaAs,3 InGaP/InGaAs/GaAs,4 GaN/AlGaN,2,5 and Si Ref. 1 have been explored

  9. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  10. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Fujioka, H., E-mail: hfujioka@iis.u-tokyo.ac.jp [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); CREST, Japan Science and Technology Corporation (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)

    2014-05-05T23:59:59.000Z

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3?×?10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  11. Faces of the Recovery Act: Sun Catalytix

    Broader source: Energy.gov [DOE]

    At the Massachusetts Institute of Technology, Dan Nocera talks about Sun Catalytix, the next generation of solar energy, and ARPA-E funding through the Recovery Act.

  12. Combustion & Fuels Waste Heat Recovery & Utilization Project...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Combustion & Fuels Waste Heat Recovery & Utilization Project Project Technical Lead - Thermoelectric Analysis & Materials 27 February 2008 2008 DOE OVT Annual Merit Review 2008...

  13. Recovery Act Progress Update: Reactor Closure Feature

    SciTech Connect (OSTI)

    Cody, Tom

    2010-01-01T23:59:59.000Z

    A Recovery Act Progress Update. Decommissioning of two nuclear reactor sites at the Department of Energy's facilities has been approved and is underway.

  14. Faces of the Recovery Act: 1366 Technologies

    Broader source: Energy.gov [DOE]

    LEXINGTON, MA - At 1366 Technologies, Ely Sachs and Frank van Mierlo are using ARPA-E Recovery Act funding to dramatically reduce the costs of solar panel production.

  15. Recovery Act Progress Update: Reactor Closure Feature

    ScienceCinema (OSTI)

    Cody, Tom

    2012-06-14T23:59:59.000Z

    A Recovery Act Progress Update. Decommissioning of two nuclear reactor sites at the Department of Energy's facilities has been approved and is underway.

  16. Los Alamos plants willows for flood recovery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    plants willows Los Alamos plants willows for flood recovery The Laboratory's Corrective Actions Program (CAP) planted nearly 10,000 willows to help preserve the Pueblo Canyon...

  17. Recovery News Flashes | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery and Reinvestment Act workers are in the final stage of decommissioning a nuclear reactor after they recently removed thick steel shields once used to absorb...

  18. Cost Recovery Charge (CRC) Calculation Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cost Recovery Charge (CRC) Calculation Table Updated: March 20, 2015 FY 2016 February 2015 CRC Calculation Table (pdf) Final FY 2015 CRC Letter & Table (pdf) Note: The Cost...

  19. Industrial Heat Recovery with Organic Rankine Cycles

    E-Print Network [OSTI]

    Hnat, J. G.; Patten, J. S.; Cutting, J. C.; Bartone, L. M.

    1982-01-01T23:59:59.000Z

    to examine a specific application of the use of an ORC heat recovery system and compare it to a stear), Rankine cycle heat recovery system. The particular application ~ssumed is heat recovery from diesel engine exhaust gas at a temPErature of 700F. Figure...,vaporized and superheated ina flue gas heat recovery su bsystem. he super heated fluid is expanded through a turbine for power p oduction, condensed in a water cooled condenser and return d to the vaporizer via feed pu mps. In the steam cycle, a port n of the Figure 1...

  20. Bioelectrochemical Integration of Waste Heat Recovery, Waste...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bioelectrochemical Integration of Waste Heat Recovery, Waste-to-Energy Conversion, and Waste-to-Chemical Conversion with Industrial Gas and Chemical Manufacturing Processes...

  1. Bioelectrochemical Integration of Waste Heat Recovery, Waste...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    MHRC System Concept ADVANCED MANUFACTURING OFFICE Bioelectrochemical Integration of Waste Heat Recovery, Waste-to-Energy Conversion, and Waste-to-Chemical Conversion with...

  2. Modified Accelerated Cost-Recovery System (MACRS)

    Broader source: Energy.gov [DOE]

    Under the federal Modified Accelerated Cost-Recovery System (MACRS), businesses may recover investments in certain property through depreciation deductions. The MACRS establishes a set of class l...

  3. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar bandgap range. Index Terms--Epitaxy, GaAsP, InGaP, metamorphic. I. INTRODUCTION TODAY'S highest efficiency

  4. Thermal stability and degradation mechanism of WSiN/InGaP Schottky diodes

    SciTech Connect (OSTI)

    Shiojima, K.; Nishimura, K.; Hyuga, F. [NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01 (Japan)] [NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01 (Japan)

    1996-03-01T23:59:59.000Z

    This article shows that the thermal stability of an InGaP Schottky contact can be improved by the refractory metal WSiN. Both the electrical characteristics and interfacial reactions were estimated by the {ital I}{endash}{ital V} (current{endash}voltage method), scanning electron microscopy, atomic force microscopy, and Auger electron spectroscopy. The WSiN/InGaP shows excellent {ital I}{endash}{ital V} characteristics, and the Schottky barrier height is 0.85 eV after annealing at 400{degree}C. Over 500{degree}C, an interfacial reaction occurs and the {ital I}{endash}{ital V} characteristic becomes leaky. We present an interfacial reaction model that shows In atoms condense and an eutectic alloy with W is formed. {copyright} {ital 1996 American Vacuum Society}

  5. Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Yamaguchi, A.; Isozumi, S.; Komiya, S.

    1985-03-01T23:59:59.000Z

    Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi

  6. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  7. AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh

    E-Print Network [OSTI]

    Itoh, Tatsuo

    AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh Department-mail: ykchung@ee.ucla.edu Abstract - This paper presents the first single-ended AlGaN/GaN heterojunction field, respectively. For the frequency doubler with 1mm gate periphery AlGaN/GaN HFET, conversion gain of 0.17 d

  8. Materials Science and Engineering B59 (1999) 319322 Microcalorimetric absorption spectroscopy in GaNAlGaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    1999-01-01T23:59:59.000Z

    Microcalorimetric measurements of small absorption coefficients have been performed on thin GaN­AlGaN quantum wells in GaN­AlGaN quantum wells Axel Go¨ldner a, *, Axel Hoffmann a , Bernard Gil b , Pierre Lefebvre b at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily

  9. Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors

    E-Print Network [OSTI]

    Dietz, Nikolaus

    substrate. As shown in Fig. 1(a), the device structures consist of a 0.2 m n+ -GaN top contact (emitter.1117/12.828156 Proc. of SPIE Vol. 7467 74670W-1 #12;(a) Sapphire Substrate n GaN Bottom Contact AlxGa1-xN Barrier n GaNAl fraction induced effects on the capacitance characteristics of n+ -GaN/AlxGa1-xN IR detectors

  10. Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

    SciTech Connect (OSTI)

    Koh, Inoue; Yamane, Yasuro; Shiojima, Kenji [NTT LSI Lab., Kanagawa (Japan)] [and others

    1995-12-31T23:59:59.000Z

    This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.

  11. Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

    SciTech Connect (OSTI)

    Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01T23:59:59.000Z

    With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined using optical reflectance and the nucleation density was determined using atomic force microscopy (AFM) and Nomarski microscopy. Dislocation density was measured using X-ray diffraction and AFM after coating the surface with silicon nitride to delineate all dislocation types. The program milestone of producing GaN films with dislocation densities of 1 x 10{sup 8} cm{sup -2} was met by silicon nitride treatment of annealed sapphire followed by the multiple deposition of a low density of GaN nuclei followed by high temperature GaN growth. Details of this growth process and the underlying science are presented in this final report along with problems encountered in this research and recommendations for future work.

  12. Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy

    E-Print Network [OSTI]

    in a highly defective GaAs layer.as5 Recently, InGaP light-emitting diodes have been fabricated on Si using

  13. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  14. Faces of the Recovery Act: Sun Catalytix

    ScienceCinema (OSTI)

    Nocera, Dave

    2013-05-29T23:59:59.000Z

    BOSTON- At the Massachusetts Institute of Technology, Dan Nocera talks about Sun Catalytix, the next generation of solar energy, and ARPA-E funding through the Recovery Act. To learn about more ARPA-E projects through the Recovery Act: http://arpa-e.energy.gov/FundedProjects.aspx

  15. Optimize carbon dioxide sequestration, enhance oil recovery

    E-Print Network [OSTI]

    - 1 - Optimize carbon dioxide sequestration, enhance oil recovery January 8, 2014 Los Alamos simulation to optimize carbon dioxide (CO2) sequestration and enhance oil recovery (CO2-EOR) based on known production. Due to carbon capture and storage technology advances, prolonged high oil prices

  16. Managing Manure with Biogas Recovery Systems

    E-Print Network [OSTI]

    Mukhtar, Saqib

    emissions and capture biogas--a useful source of energy. About Anaerobic Digestion Biogas recovery systems manure in an oxygen-free environment. One of the natural prod- ucts of anaerobic digestion is biogas Digestion Biogas recovery systems are a proven technology. Currently, more than 30 digester systems

  17. Thermal recovery of oil and bitumen

    SciTech Connect (OSTI)

    Butler, R.M. (Dept. of Chemical and Petroleum Engineering, Univ. of Calgary, Calgary, Alberta (CA))

    1991-01-01T23:59:59.000Z

    This book is organized into the following chapters: Introduction to Thermal Recovery; Conduction of Heat Within Solids; Convective Heating within Reservoirs; Steamfloodings; The Displacement of Heavy Oil; Cyclic Steam Simulation; Steam-Assisted Gravity Drainage; Steam Recovery Equipment and Facilities; and In Situ Combustion.

  18. Recovery in aluminium Ph.D. thesis

    E-Print Network [OSTI]

    to be superior. iii #12;The first use of the method was a study of recovery of a deformed aluminium alloy (AA1050). The aluminium alloy was deformed by cold rolling to a thickness reduction of 38%. The sample was annealed at 300Recovery in aluminium Ph.D. thesis by Carsten Gundlach Supervisors: Henning Friis Poulsen Wolfgang

  19. Recovery of uranium from seawater

    SciTech Connect (OSTI)

    Sugasaka, K. (Government Industrial Research Inst., Shikoku, Japan); Katoh, S.; Takai, N.; Takahashi, H.; Umezawa, Y.

    1981-01-01T23:59:59.000Z

    Seawater contains various elements in solution. Deuterium, lithium, and uranium are the important ingredients for energy application at present and in the future. This paper deals with the recovery of uranium from seawater, with emphasis on the development of an adsorbent with high selectivity and rate of adsorption for uranium. Polyacrylamidoxime chelating resins were synthesized from various co-polymers of acrylonitrile and cross-linking agents. The resulting resins with the chelating amidoxime group showed selective adsorption for uranium in seawater. The amount of uranium adsorbed from seawater at room temperature reached 3.2 mg/g resin after 180 days. Polyacrylamidoxime fiber, which was prepared from polyacrylonitrile fiber and hydroxylamine, showed a high rate of adsorption for uranium. The polyacrylamidoxime fiber conditioned with 1 M HC1 and 1 M NaOH adsorbed 4 mg U/g fiber from seawater in ten days. 9 figures, 6 tables.

  20. Method for enhanced oil recovery

    DOE Patents [OSTI]

    Comberiati, Joseph R. (Morgantown, WV); Locke, Charles D. (Morgantown, WV); Kamath, Krishna I. (Chicago, IL)

    1980-01-01T23:59:59.000Z

    The present invention is directed to an improved method for enhanced recovery of oil from relatively "cold" reservoirs by carbon dioxide flooding. In oil reservoirs at a temperature less than the critical temperature of 87.7.degree. F. and at a pore pressure greater than the saturation pressure of carbon dioxide at the temperature of the reservoir, the carbon dioxide remains in the liquid state which does not satisfactorily mix with the oil. However, applicants have found that carbon dioxide can be vaporized in situ in the reservoir by selectively reducing the pore pressure in the reservoir to a value less than the particular saturated vapor pressure so as to greatly enhance the mixing of the carbon dioxide with the oil.

  1. Andrew Case "American Environmental History"

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    Andrew Case History "American Environmental History" Spring 2008 Advisor: William Cronon Classics, Richard. "It's Your Misfortune and None of My Own": A New History of the American West. (Norman

  2. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  3. Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

    E-Print Network [OSTI]

    Alpay, S. Pamir

    Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple InxGa1-xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with ½1210InGaN//½1210GaN and ½0001InGaN//½0001GaN epitaxial

  4. www.energy.ca.gov/recovery/documents/funding_summary.pdf 8 HR 1 American Recovery And Reinvestment Act of 2009

    E-Print Network [OSTI]

    circulating fan; $150 million for any qualified natural gas, propane, oil furnace or hot water boiler, landfill gas, waste-to-energy, and marine renewable facilities. Temporary Election to Claim the Investment% investment tax credit in the year that the facility is placed in service. Facilities that produce electricity

  5. of October 2002 African Americans

    E-Print Network [OSTI]

    Kammen, Daniel M.

    the impact of air pollution from coal-fired power plants upon the African American community. The Black

  6. Recovery Act: ArcelorMittal USA Blast Furnace Gas Flare Capture

    SciTech Connect (OSTI)

    Seaman, John

    2013-01-14T23:59:59.000Z

    The U.S. Department of Energy (DOE) awarded a financial assistance grant under the American Recovery and Reinvestment Act of 2009 (Recovery Act) to ArcelorMittal USA, Inc. (ArcelorMittal) for a project to construct and operate a blast furnace gas recovery boiler and supporting infrastructure at ArcelorMittal’s Indiana Harbor Steel Mill in East Chicago, Indiana. Blast furnace gas (BFG) is a by-product of blast furnaces that is generated when iron ore is reduced with coke to create metallic iron. BFG has a very low heating value, about 1/10th the heating value of natural gas. BFG is commonly used as a boiler fuel; however, before installation of the gas recovery boiler, ArcelorMittal flared 22 percent of the blast furnace gas produced at the No. 7 Blast Furnace at Indiana Harbor. The project uses the previously flared BFG to power a new high efficiency boiler which produces 350,000 pounds of steam per hour. The steam produced is used to drive existing turbines to generate electricity and for other requirements at the facility. The goals of the project included job creation and preservation, reduced energy consumption, reduced energy costs, environmental improvement, and sustainability.

  7. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  8. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. [National Kaohsiung Normal University, Department of Electronic Engineering (China)], E-mail: jhtsai@nknucc.nknu.edu.tw; Chiu, S.-Y.; Lour, W.-S. [National Taiwan Ocean University, Department of Electrical Engineering (China); Guo, D.-F. [Air Force Academy, Department of Electronic Engineering (China)

    2009-07-15T23:59:59.000Z

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  9. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  10. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2013-05-13T23:59:59.000Z

    Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

  11. InGaN/GaN single-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)

    2012-06-11T23:59:59.000Z

    We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.

  12. Latin American and Caribbean Studies

    E-Print Network [OSTI]

    Saldin, Dilano

    Latin American and Caribbean Studies Certificate About Us UWM graduates in the 21st century American and Caribbean Studies Certificate Program (LACS) will be especially well-prepared for careers academic focus in Latin American and Caribbean languages, histories, and cultures. However, the LACS

  13. Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona

    E-Print Network [OSTI]

    Anderson, Timothy J.

    be grown at lower temperature than by CVD. As example, ALD growth of device quality GaAs, GaP, and InGaP

  14. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  15. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11T23:59:59.000Z

    AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  16. InGaAsP/InGaP buried heterostructure lasers at 810 nm

    SciTech Connect (OSTI)

    Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.

    1984-12-01T23:59:59.000Z

    InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.

  17. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  18. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01T23:59:59.000Z

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  19. The structure of GaAs/Si(211) heteroepitaxial layers

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.

    1985-05-01T23:59:59.000Z

    Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.

  20. Office of Electricity Delivery and Energy Reliability Recovery...

    Energy Savers [EERE]

    Electricity Delivery and Energy Reliability Recovery Program Plan Office of Electricity Delivery and Energy Reliability Recovery Program Plan Microsoft Word - OE PSRP June 5 2009...

  1. Supporting Statement: OE Recovery Act Financial Assistance Grants...

    Energy Savers [EERE]

    Supporting Statement: OE Recovery Act Financial Assistance Grants OMB Control Number 1910-5149 Supporting Statement: OE Recovery Act Financial Assistance Grants OMB Control Number...

  2. Recovery Act, Office of the Biomass Program,Funding Opportunity...

    Broader source: Energy.gov (indexed) [DOE]

    Recovery Act, Office of the Biomass Program,Funding Opportunity Announcements Special Notice Recovery Act, Office of the Biomass Program,Funding Opportunity Announcements Special...

  3. advanced oil recovery: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    simulation to optimize carbon dioxide (CO2) sequestration and enhance oil recovery (CO2-EOR) based on known 4 Enhanced oil recovery through water imbibition in fractured...

  4. actinides recovery rar: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    simulation to optimize carbon dioxide (CO2) sequestration and enhance oil recovery (CO2-EOR) based on known 111 Key recovery in a business environment Computer Technologies...

  5. abnormal metabolic recovery: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    simulation to optimize carbon dioxide (CO2) sequestration and enhance oil recovery (CO2-EOR) based on known 140 Key recovery in a business environment Computer Technologies...

  6. advanced secondary recovery: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    simulation to optimize carbon dioxide (CO2) sequestration and enhance oil recovery (CO2-EOR) based on known 116 Key recovery in a business environment Computer Technologies...

  7. FOIA Frequently Requested Documents: DE-EE0002884 Recovery Act...

    Energy Savers [EERE]

    FOIA Frequently Requested Documents: DE-EE0002884 Recovery Act - Integrated Algal Biorefinery (IABR) FOIA Frequently Requested Documents: DE-EE0002884 Recovery Act - Integrated...

  8. Synchrophasor Technologies and their Deployment in the Recovery...

    Broader source: Energy.gov (indexed) [DOE]

    Synchrophasor Technologies and their Deployment in the Recovery Act Smart Grid Programs (August 2013) Synchrophasor Technologies and their Deployment in the Recovery Act Smart Grid...

  9. Recovery Act Selections for Smart Grid Invesment Grant Awards...

    Broader source: Energy.gov (indexed) [DOE]

    Recovery Act Selections for Smart Grid Invesment Grant Awards- By Category Updated July 2010 Recovery Act Selections for Smart Grid Invesment Grant Awards- By Category Updated July...

  10. Cumulative Federal Payments to OE Recovery Act Recipients, through...

    Broader source: Energy.gov (indexed) [DOE]

    September 30, 2014 Cumulative Federal Payments to OE Recovery Act Recipients, through September 30, 2014 Cumulative Federal Payments to OE Recovery Act Recipients, through...

  11. Cumulative Federal Payments to OE Recovery Act Recipients, through...

    Broader source: Energy.gov (indexed) [DOE]

    3 Cumulative Federal Payments to OE Recovery Act Recipients, through June 30, 2013 Graph of cumulative Federal Payments to OE Recovery Act Recipients, through June 30, 2013. OE...

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    Broader source: Energy.gov (indexed) [DOE]

    4 Cumulative Federal Payments to OE Recovery Act Recipients, through June 30, 2014 Cumulative Federal Payments to OE Recovery Act Recipients, through June 30, 2014. OE ARRA...

  13. Energy Secretary Chu Announces $384 Million in Recovery Act Funding...

    Energy Savers [EERE]

    384 Million in Recovery Act Funding for Environmental Cleanup in New Mexico Energy Secretary Chu Announces 384 Million in Recovery Act Funding for Environmental Cleanup in New...

  14. New Mexico Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Mexico Recovery Act State Memo New Mexico Recovery Act State Memo New Mexico has substantial natural resources, including oil, gas, solar, wind, geothermal, and hydroelectric...

  15. Recovery Act Workers Demolish Facility Tied to Project Pluto...

    Office of Environmental Management (EM)

    Recovery and Rein- vestment Act accomplishment helping clean up traces of past nuclear testing at the Nevada National Security Site (NNSS). Recovery Act workers safely hauled...

  16. Exsolution Enhanced Oil Recovery with Concurrent CO2 Sequestration...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exsolution Enhanced Oil Recovery with Concurrent CO2 Sequestration. Exsolution Enhanced Oil Recovery with Concurrent CO2 Sequestration. Abstract: A novel EOR method using...

  17. Post-Shred Materials Recovery Technology Development and Demonstration...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Shred Materials Recovery Technology Development and Demonstration Post-Shred Materials Recovery Technology Development and Demonstration 2009 DOE Hydrogen Program and Vehicle...

  18. Post-Shred Materials Recovery Technology Development and Demonstration...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Post-Shred Materials Recovery Technology Development and Demonstration Post-Shred Materials Recovery Technology Development and Demonstration Presentation from the U.S. DOE Office...

  19. Department of Energy Issues Loan Guarantee Supported by Recovery...

    Office of Environmental Management (EM)

    Loan Guarantee Supported by Recovery Act for Nevada Geothermal Project Department of Energy Issues Loan Guarantee Supported by Recovery Act for Nevada Geothermal Project September...

  20. Department of Energy Issues Loan Guarantee Supported by Recovery...

    Energy Savers [EERE]

    Department of Energy Issues Loan Guarantee Supported by Recovery Act for Nevada Geothermal Project Department of Energy Issues Loan Guarantee Supported by Recovery Act for Nevada...

  1. Dynamic Recovery in Silicate-Apatite Structures Under Irradiation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Recovery in Silicate-Apatite Structures Under Irradiation and Implications for Long-Term Immobilization of Actinides. Dynamic Recovery in Silicate-Apatite Structures Under...

  2. President Obama Announces Over $467 Million in Recovery Act Funding...

    Office of Environmental Management (EM)

    Over 467 Million in Recovery Act Funding for Geothermal and Solar Energy Projects President Obama Announces Over 467 Million in Recovery Act Funding for Geothermal and Solar...

  3. President Obama Announces Over $467 Million in Recovery Act Funding...

    Energy Savers [EERE]

    President Obama Announces Over 467 Million in Recovery Act Funding for Geothermal and Solar Energy Projects President Obama Announces Over 467 Million in Recovery Act Funding for...

  4. DOE Offers $15 Million Geothermal Heat Recovery Opportunity ...

    Office of Environmental Management (EM)

    15 Million Geothermal Heat Recovery Opportunity DOE Offers 15 Million Geothermal Heat Recovery Opportunity August 25, 2010 - 11:11am Addthis Photo of geothermal power plant....

  5. ITP Energy Intensive Processes: Improved Heat Recovery in Biomass...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Improved Heat Recovery in Biomass-Fired Boilers ITP Energy Intensive Processes: Improved Heat Recovery in Biomass-Fired Boilers biomass-firedboilers.pdf More Documents &...

  6. addiction recovery principles: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    management, and recovery coaching helped, or are now helping, transform addiction treatment into a more person-centered, holistic, family-centered, and recovery-focused system...

  7. Thermoelectric Waste Heat Recovery Program for Passenger Vehicles...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Waste Heat Recovery Program for Passenger Vehicles Thermoelectric Waste Heat Recovery Program for Passenger Vehicles 2012 DOE Hydrogen and Fuel Cells Program and Vehicle...

  8. An Overview of Thermoelectric Waste Heat Recovery Activities...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    An Overview of Thermoelectric Waste Heat Recovery Activities in Europe An Overview of Thermoelectric Waste Heat Recovery Activities in Europe An overview presentation of R&D...

  9. Opportunities and Challenges of Thermoelectrlic Waste Heat Recovery...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Challenges of Thermoelectrlic Waste Heat Recovery in the Automotive Industry Opportunities and Challenges of Thermoelectrlic Waste Heat Recovery in the Automotive Industry 2005...

  10. Performance of an Organic Rankine Cycle Waste Heat Recovery System...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Performance of an Organic Rankine Cycle Waste Heat Recovery System for Light Duty Diesel Engines Performance of an Organic Rankine Cycle Waste Heat Recovery System for Light Duty...

  11. Overview of Fords Thermoelectric Programs: Waste Heat Recovery...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  12. Recovery Act Workers Remediate and Restore Former Waste Sites...

    Office of Environmental Management (EM)

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  13. Recovery Act: Wind Energy Consortia between Institutions of Higher...

    Broader source: Energy.gov (indexed) [DOE]

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  14. High Efficiency Microturbine with Integral Heat Recovery - Presentatio...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    High Efficiency Microturbine with Integral Heat Recovery - Presentation by Capstone Turbine Corporation, June 2011 High Efficiency Microturbine with Integral Heat Recovery -...

  15. Recovery Act Selections for Smart Grid Investment Grant Awards...

    Office of Environmental Management (EM)

    Recovery Act Selections for Smart Grid Investment Grant Awards- By Category Updated July 2010 Recovery Act Selections for Smart Grid Investment Grant Awards- By Category Updated...

  16. Steelmaker Matches Recovery Act Funds to Save Energy & Reduce...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and installed with DOE Recovery Act Funding. Blast Furnace Gas Recovery Boiler Provides Steam and Power at Steel Mill More Documents & Publications Capturing Waste Gas: Saves...

  17. americium recovery service: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    25 Next Page Last Page Topic Index 1 Asynchronous intrusion recovery for interconnected web services Biology and Medicine Websites Summary: Asynchronous intrusion recovery for...

  18. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  19. Powering Up for Recovery in Michigan

    Broader source: Energy.gov [DOE]

    Elizabeth Rolinski can’t wait to reopen the factory she was once forced to shutter. When the Department of Energy awarded Johnson Controls Inc. a $300 million grant to manufacture high-performance batteries for electric cars, it helped attract the company to reinvest in American workers in this all-American town.

  20. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14T23:59:59.000Z

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.