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1

Freeport Begins Offshore Sulfur Plant  

Science Journals Connector (OSTI)

Freeport Begins Offshore Sulfur Plant ... Discovered by Humble Oil & Refining, the sulfur deposit off Grand Isle is believed by industry observers to be one of the largest discovered in recent years. ...

1958-07-07T23:59:59.000Z

2

Freeport, TX Natural Gas LNG Imports (Price) From Nigeria (Dollars...  

U.S. Energy Information Administration (EIA) Indexed Site

Freeport, TX Natural Gas LNG Imports (Price) From Nigeria (Dollars per Thousand Cubic Feet) Freeport, TX Natural Gas LNG Imports (Price) From Nigeria (Dollars per Thousand Cubic...

3

Energy Department Authorizes Additional Volume at Proposed Freeport...  

Office of Environmental Management (EM)

Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export...

4

Energy Department Authorizes Freeport LNG to Export Liquefied...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Freeport LNG to Export Liquefied Natural Gas Energy Department Authorizes Freeport LNG to Export Liquefied Natural Gas November 14, 2014 - 2:00pm Addthis News Media Contact...

5

Energy Department Authorizes Additional Volume at Proposed Freeport LNG  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Additional Volume at Proposed Freeport Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas November 15, 2013 - 3:00pm Addthis NEWS MEDIA CONTACT (202) 586-4940 WASHINGTON - The Energy Department announced today that it has conditionally authorized Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC (Freeport) to export additional volumes of domestically produced liquefied natural gas (LNG) to countries that do not have a Free Trade Agreement (FTA) with the United States from the Freeport LNG Terminal in Quintana Island, Texas. Freeport previously received approval to export 1.4 billion cubic feet of natural gas a day (Bcf/d) of LNG from this facility to non-FTA countries on May 17, 2013. The Freeport Expansion

6

Energy Department Authorizes Additional Volume at Proposed Freeport LNG  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Energy Department Authorizes Additional Volume at Proposed Freeport Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas Energy Department Authorizes Additional Volume at Proposed Freeport LNG Facility to Export Liquefied Natural Gas November 15, 2013 - 3:00pm Addthis NEWS MEDIA CONTACT (202) 586-4940 WASHINGTON - The Energy Department announced today that it has conditionally authorized Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC (Freeport) to export additional volumes of domestically produced liquefied natural gas (LNG) to countries that do not have a Free Trade Agreement (FTA) with the United States from the Freeport LNG Terminal in Quintana Island, Texas. Freeport previously received approval to export 1.4 billion cubic feet of natural gas a day (Bcf/d) of LNG from this

7

Graduate Handbook 2011-2012 GRADUATE HANDBOOK  

E-Print Network (OSTI)

1 Graduate Handbook 2011-2012 GRADUATE HANDBOOK LINGUISTICS/TESOL Linguistics and English Language................................2 The Context of the University/ Purpose of the Handbook..................3 Introduction and will try our best to help you to do so. This graduate handbook is one of our ways of assisting you. Brigham

Olsen Jr., Dan R.

8

Freeport, Texas: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Freeport, TX) Freeport, TX) Jump to: navigation, search Equivalent URI DBpedia Coordinates 28.9541368°, -95.3596617° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":28.9541368,"lon":-95.3596617,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

9

EIS-0487: Freeport LNG Liquefaction Project, Brazoria County...  

Energy Savers (EERE)

environmental impacts of a proposal to construct and operate the Freeport Liquefied Natural Gas (LNG) Liquefaction Project, which would expand an existing LNG import terminal...

10

Price Liquefied Freeport, TX Natural Gas Exports Price to United...  

U.S. Energy Information Administration (EIA) Indexed Site

United Kingdom (Dollars per Thousand Cubic Feet) Price Liquefied Freeport, TX Natural Gas Exports Price to United Kingdom (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1...

11

Price of Freeport, TX Natural Gas LNG Imports from Other Countries...  

Annual Energy Outlook 2012 (EIA)

Price of Freeport, TX Natural Gas LNG Imports from Other Countries (Nominal Dollars per Thousand Cubic Feet) Price of Freeport, TX Natural Gas LNG Imports from Other Countries...

12

EIS-0487: Freeport LNG Liquefaction Project, Brazoria County, Texas |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

87: Freeport LNG Liquefaction Project, Brazoria County, Texas 87: Freeport LNG Liquefaction Project, Brazoria County, Texas EIS-0487: Freeport LNG Liquefaction Project, Brazoria County, Texas SUMMARY Federal Energy Regulatory Commission (FERC) is preparing an EIS, with DOE as a cooperating agency, to analyze the potential environmental impacts of a proposal to construct and operate the Freeport Liquefied Natural Gas (LNG) Liquefaction Project, which would expand an existing LNG import terminal on Quintana Island in Brazoria County, Texas, to enable the terminal to liquefy and export the LNG. PUBLIC COMMENT OPPORTUNITIES None available at this time. DOCUMENTS AVAILABLE FOR DOWNLOAD July 25, 2012 EIS-0487: Notice of Intent to Prepare an Environmental Impact Statement Freeport LNG Liquefaction Project, Brazoria County, Texas

13

FTCP Biennial Report- Calendar Years 2011-2012  

Energy.gov (U.S. Department of Energy (DOE))

This Biennial Report summarizes the actions taken in 2011-2012 to ensure organizations maintain the critical technical capabilities needed for the safe operation of defense nuclear facilities.

14

2011-2012 International Programs Report College of Architecture  

E-Print Network (OSTI)

2011-2012 International Programs Report College of Architecture COA Quick Look Number of Students Abroad 92 Top Locations Italy & Greece India UK China Majors Architecture - 43 Building Construction - 12 City Planning -15 Industrial Design - 17 Undeclared- 5 Academic Year 2011-2012 Collge of Architecture

Weber, Rodney

15

ORDER NO. 3357: Freeport LNG | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ORDER NO. 3357: Freeport LNG ORDER NO. 3357: Freeport LNG ORDER NO. 3357: Freeport LNG ORDER CONDITIONALLY GRANTING LONG-TERM MULTI-CONTRACT AUTHORIZATION TO EXPORT LIQUEFIED NATURAL GAS BY VESSEL FROM THE FREEPORT LNG TERMINAL ON QUINTANA ISLAND, TEXAS TO NON-FREE TRADE AGREEMENT NATIONS Based on a review of the complete record and for the reasons set forth below, DOE/FE has concluded that the opponents of the FLEX Application have not demonstrated that the requested authorization will be inconsistent with the public interest and finds that the exports proposed in this Application are likely to yield net economic benefits to the United States. DOE/FE further finds that FLEX's proposed exports on behalf of other entities should be conditionally authorized at a volumetric rate not to exceed the

16

Freeport, TX Liquefied Natural Gas Exports to Brazil (Million...  

Gasoline and Diesel Fuel Update (EIA)

to Brazil (Million Cubic Feet) Freeport, TX Liquefied Natural Gas Exports to Brazil (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,581 2014 2,664...

17

Freeport, TX Natural Gas Liquefied Natural Gas Imports from Egypt...  

Annual Energy Outlook 2012 (EIA)

Egypt (Million Cubic Feet) Freeport, TX Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,969 -...

18

Price Liquefied Freeport, TX Natural Gas Exports Price to Japan...  

Gasoline and Diesel Fuel Update (EIA)

Japan (Dollars per Thousand Cubic Feet) Price Liquefied Freeport, TX Natural Gas Exports Price to Japan (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4...

19

Freeport, TX Exports to japan Liquefied Natural Gas (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

japan Liquefied Natural Gas (Million Cubic Feet) Freeport, TX Exports to japan Liquefied Natural Gas (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

20

Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefactio...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC and FLNG Liquefaction 3, LLC - 14-005-CIC Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG...

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

SEMI-ANNUAL REPORTS - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

- FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-161-LNG - ORDER 3282 SEMI-ANNUAL REPORTS - FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT....

22

SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTI...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 11-161-LNG - ORDER 3357 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION, L.P. & FLNG LIQUEFACTION, LLC - FE...

23

Final External Peer Review Report for Freeport Harbor, Texas  

E-Print Network (OSTI)

Final External Peer Review Report for Freeport Harbor, Texas Draft Feasibility Report. W911NF-07-D-0001 Task Control Number: 08192 August 20, 2008 #12;FINAL EXTERNAL PEER REVIEW REPORT Battelle Final External Peer Review Report August 20, 2008 TABLE OF CONTENTS EXECUTIVE SUMMARY

US Army Corps of Engineers

24

Tourism Crisis Management Institute 2011-2012 Annual Report  

E-Print Network (OSTI)

Tourism Crisis Management Institute 2011-2012 Annual Report 2011 natural disasters cost global for us here at the TCMI. As the global tourism industry continues to be affected by crises ranging from financial uncertainty to extreme weather events, many tourism organizations are faced with negative

Guo, Jing

25

SDSU General Catalog 2011-2012 281 Hospitality and Tourism  

E-Print Network (OSTI)

SDSU General Catalog 2011-2012 281 HTM Hospitality and Tourism Management In the College of Hospitality and Tourism Management Major in hospitality and tourism management with the B.S. degree in applied arts and sciences. Emphasis in global tourism management. Emphasis in hotel operations and management

Gallo, Linda C.

26

Strategic Plan 2012-2015 Progress Review 2011 2012  

E-Print Network (OSTI)

Strategic Plan 2012-2015 Progress ­ Review 2011 ­ 2012 Academic Units Department of Construction Therapy School of Education School of Social Work #12;Strategic Plan 2012-2015 Progress ­ Review 2011 the community are used ­ based on need. #12;Strategic Plan 2012-2015 Progress ­ Review 2011-2012 Page 3 of 30

Stephens, Graeme L.

27

SDSU General Catalog 2011-2012 335 Mathematics  

E-Print Network (OSTI)

SDSU General Catalog 2011-2012 335 MATH Mathematics In the College of Sciences OFFICE: Geology/Mathematics'Sullivan, Ponomarenko, Smarandache Lecturers: Brock, Cavanaugh, Rotar Offered by the Department of Mathematics and Statistics Master of Arts degree in mathematics. Master of Science degree in applied mathematics

Gallo, Linda C.

28

2011 & 2012 Queen's University Greenhouse Gas (GHG) Inventory  

E-Print Network (OSTI)

2011 & 2012 Queen's University Greenhouse Gas (GHG) Inventory Summary Queen's University completes annual GHG inventories as part of the ongoing commitment to reduce GHG emissions and address climate in 2010. This is the fourth inventory report. This inventory report accounts for GHG emissions from

Abolmaesumi, Purang

29

ISU 2011-2012 B.A. DEGREE in ADVERTISING  

E-Print Network (OSTI)

ISU 2011-2012 B.A. DEGREE in ADVERTISING Recommended timeline for successful completion of a degree.5 Semester 3 SOPHOMORE YEAR Semester 4 Advrt 230 ­ Advertising Principles 3 Jl MC 201 ­ Reporting and Writing ­ Strategic Planning 3 Advrt 334 or 336 ­ Advertising Creativity 3 Advrt Recommendation ­ 300-level 3

Lin, Zhiqun

30

SDSU General Catalog 2011-2012 199 Computer Science  

E-Print Network (OSTI)

SDSU General Catalog 2011-2012 199 CS Computer Science In the College of Sciences OFFICE: Geology/Mathematics/Computer Science 413 TELEPHONE: 619-594-6191 http://www.cs.sdsu.edu Faculty Emeritus: Anantha, Baase-Mayers, Donald, Riggins Adjunct: Root, Thomas Offered by the Department Master of Science degree in computer science

Gallo, Linda C.

31

232 SDSU General Catalog 2011-2012 Environmental Engineering  

E-Print Network (OSTI)

of mathematics, physics, chemistry and basic engineering with spe- cialized study in civil, construction232 SDSU General Catalog 2011-2012 Environmental Engineering In the College of Engineering OFFICE: Engineering 424 TELEPHONE: 619-594-6071 E-MAIL: environmental@engineering.sdsu.edu The undergraduate degree

Gallo, Linda C.

32

ECONOMIC AND COMMUNITY DEVELOPMENT 2011-2012 Concentration Information  

E-Print Network (OSTI)

Page 1/3 ECONOMIC AND COMMUNITY DEVELOPMENT 2011-2012 Concentration Information Economic, institutional, political, and economic processes that serve to promote (or retard) progress in this regard. Since the subject, by its very nature, is comprehensive, the economic and community development

Levinson, David M.

33

SDSU General Catalog 2011-2012 403 Religious Studies  

E-Print Network (OSTI)

SDSU General Catalog 2011-2012 403 REL S Religious Studies In the College of Arts and Letters or to interpret world events without grasping how religion has helped to determine them. As United States Supreme-professional preparation for fields such as law, teaching, medicine, counseling, social work, conflict resolution, inter

Gallo, Linda C.

34

Peer Review Committees 2011-2012 REVIEWEES COMMITTEES  

E-Print Network (OSTI)

Peer Review Committees 2011-2012 REVIEWEES COMMITTEES Instructors/Lecturers Opoku-Edusei Bierman that their classes are visited. We will hold our peer review meeting in mid-April. Therefore, I ask that signed, Carleton Kocher (Chair), Fenster, Via Popper (Chair), Cohen, Fagan Sukharev (Chair), Cummings, Higgins Peer

35

Japan-Asian Studies Program Academic Year 2011-2012  

E-Print Network (OSTI)

Japan-Asian Studies Program Academic Year 2011-2012 Eligibility All University of Tokyo students by University of Tokyo #12;01 IntroductionIntroduction Japan-Asian Studies Program 2011 The Japan-Asian Studies approach to Asia, including Japan, that transcends departments and fields. It can be participated

Yamamoto, Hirosuke

36

Distillation and Dehydro Reactors Advanced Process Conrol Freeport Texas PLant  

E-Print Network (OSTI)

Distillation and Dehydro Reactors Advanced Process Control Freeport Texas Plant ESL-IE-14-05-16 Proceedings of the Thrity-Sixth Industrial Energy Technology Conference New Orleans, LA. May 20-23, 2014 G-KTI, Polyamide and Intermediates Distillation... APC 6/2/2014 INTERNAL; CONFIDENTIAL 2 APC is a collection of two different control and automation technologies Multivariable Predictive Control (MPC). In this approach, an empirical, dynamic, plant model is used in combination with both a steady...

Eisele, D.

2014-01-01T23:59:59.000Z

37

School of Psychology Blue Book's Friend 2011-2012 School of Psychology  

E-Print Network (OSTI)

School of Psychology Blue Book's Friend 2011-2012 1 School of Psychology The Queen's University of Belfast The Blue Book's Friend 2011-2012 Undergraduate #12;School of Psychology Blue Book's Friend 2011 of Staff in the School of Psychology ... ... ... ... ... 3 More Details about Your Degree

Müller, Jens-Dominik

38

SEMI-ANNUAL REPORTS FOR FREEPORT McMoran - FE DKT. NO. 13-26...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

McMoran - FE DKT. NO. 13-26-LNG - ORDER 3290 SEMI-ANNUAL REPORTS FOR FREEPORT McMoran - FE DKT. NO. 13-26-LNG - ORDER 3290 April 2014 More Documents & Publications SEMI-ANNUAL...

39

SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTIO...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-160-LNG - ORDER 2913 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. 10-160-LNG - ORDER...

40

SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTIO...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO. 12-06-LNG - ORDER 3066 SEMI-ANNUAL REPORTS FOR FREEPORT LNG EXPANSION L.P. & FLNG LIQUEFACTION, LLC - FE DKT. NO....

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE...  

NLE Websites -- All DOE Office Websites (Extended Search)

0-161-LNG Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE Dkt. No. 10-161-LNG On May 17, 2013, the Office of Fossil Energy of the Department of Energy (DOEFE) issued...

42

Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE...  

NLE Websites -- All DOE Office Websites (Extended Search)

1-161-LNG Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC - FE Dkt. No. 11-161-LNG On November 15, 2013, the Office of Fossil Energy of the Department of Energy (DOEFE)...

43

U.S. DOE Webinar Series- 2011-2012 Hydrogen Student Design Contest  

Energy.gov (U.S. Department of Energy (DOE))

Presentation slides from the US DOE Webinar, 2011-2012 Hydrogen Student Design Contest Winners: On-Campus Tri-Generation Fuel Cell Systems, presented on September 4, 2012.

44

Political Science Page 219Sonoma State University 2011-2012 Catalog Department Office  

E-Print Network (OSTI)

Political Science Page 219Sonoma State University 2011-2012 Catalog Department Office Stevenson *Faculty Early Retirement Program Programs Offered Bachelor of Arts in Political Science Master's in Public Administration Minor in Political Science Teaching Credential Preparation Certificate

Ravikumar, B.

45

EP271 Syllabus 2011-2012 T2 M.P. Bradley  

E-Print Network (OSTI)

EP271 Syllabus 2011-2012 T2 M.P. Bradley EP271: Heat, Kinetic Theory & Thermodynamics 2011 Room 312) CourseWebsite:http://physics.usask.ca/%7Ebradley/EP271_main.html Textbook

Saskatchewan, University of

46

Microsoft PowerPoint - uncertainty_hh_2011_2012.ppt [Compatibility...  

U.S. Energy Information Administration (EIA) Indexed Site

2011 2011 2012 2012 2013 2013 Past Henry Hub Price and 95% NYMEX Confidence Interval, March 2011 10 12 8 10 4 6 2 4 0 Jan Jul Jan Jul Jan Jul Jan Jul 3 2010 2010 2011...

47

Annual Review of Low-Carbon Development in China (2011-2012): Chapter  

Open Energy Info (EERE)

Annual Review of Low-Carbon Development in China (2011-2012): Chapter Annual Review of Low-Carbon Development in China (2011-2012): Chapter Summaries Jump to: navigation, search Tool Summary LAUNCH TOOL Name: Annual Review of Low-Carbon Development in China (2011-2012): Chapter Summaries Focus Area: Energy Efficiency Topics: Best Practices Website: climatepolicyinitiative.org/wp-content/uploads/2011/11/China-Country-S Equivalent URI: cleanenergysolutions.org/content/annual-review-low-carbon-development- Language: English Policies: "Deployment Programs,Regulations" is not in the list of possible values (Deployment Programs, Financial Incentives, Regulations) for this property. DeploymentPrograms: Project Development Regulations: Mandates/Targets This report explores China's low-carbon development efforts under the

48

Teleseismic-Seismic Monitoring At Coso Geothermal Area (2011-2012) | Open  

Open Energy Info (EERE)

2012) 2012) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Teleseismic-Seismic Monitoring At Coso Geothermal Area (2011-2012) Exploration Activity Details Location Coso Geothermal Area Exploration Technique Teleseismic-Seismic Monitoring Activity Date 2011 - 2012 Usefulness not indicated DOE-funding Unknown Exploration Basis Map hydraulic structure within the field from seismic data Notes 2011: 16 years of seismicity were analyzed to improve hypocentral locations and simultaneously invert for the seismic velocity structure within the Coso Geothermal Field (CGF). The CGF has been continuously operated since the 1980's. 2012: 14 years of seismicity in the Coso Geothermal Field were relocated using differential travel times and simultaneously invert for

49

Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC- FE Dkt. No. 11-161-LNG  

Energy.gov (U.S. Department of Energy (DOE))

On November 15, 2013, the Office of Fossil Energy of the Department of Energy (DOE/FE) issued Order No. 3357 (FLEX II Conditional Order) to Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC,...

50

Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC- FE Dkt. No. 10-161-LNG  

Energy.gov (U.S. Department of Energy (DOE))

On May 17, 2013, the Office of Fossil Energy of the Department of Energy (DOE/FE) issued Order No. 3282 (FLEX I Conditional Order) to Freeport LNG Expansion, L.P. and FLNG Liquefaction, LLC,...

51

Microsoft PowerPoint - uncertainty_wti_2011_2012.ppt [Compatibility Mode]  

Gasoline and Diesel Fuel Update (EIA)

1 1 - December 2012 January 2011 December 2012 Historical WTI price and 95% NYMEX Confidence Interval, January 2011 $250 $150 $200 $100 $150 $50 $0 Jan Jul Jan Jul Jan Jul Jan Jul 1 2010 2010 2011 2011 2012 2012 2013 2013 Historical WTI price and 95% NYMEX Confidence Interval, February 2011 $250 $150 $200 $100 $150 $50 $0 Jan Jul Jan Jul Jan Jul Jan Jul 2 2010 2010 2011 2011 2012 2012 2013 2013 Historical WTI price and 95% NYMEX Confidence Interval, March 2011 $250 $150 $200 $100 $150 $50 $0 Jan Jul Jan Jul Jan Jul Jan Jul 3 2010 2010 2011 2011 2012 2012 2013 2013 Historical WTI price and 95% NYMEX Confidence Interval, April 2011 $250 $150 $200 $100 $150 $50 $0 Jan Jul Jan Jul Jan Jul Jan Jul 4 2010 2010 2011 2011 2012 2012 2013 2013 Historical WTI price and 95% NYMEX Confidence Interval, May 2011 $250 $150 $200 $100 $150 $50 $0 Jan Jul Jan Jul Jan Jul Jan Jul 5

52

College of Engineering University of Kentucky 2011-2012 Undergraduate Bulletin 208  

E-Print Network (OSTI)

College of Engineering University of Kentucky 2011-2012 Undergraduate Bulletin 208 Thomas W. Lester, Ph.D., P.E., is Dean of the College of Engineering; Richard J. Sweigard, Ph.D., P.E., is Associate Programs; Bruce L. Walcott, Ph.D., is Associate Dean for Economic Development and Innovations Management

MacAdam, Keith

53

Page 66 Astronomy Sonoma State University 2011-2012 Catalog Department Office  

E-Print Network (OSTI)

Page 66 Astronomy Sonoma State University 2011-2012 Catalog Department Office Darwin Hall 300 (707 Program Offered Minor in Astronomy Astronomy, offered as a minor in the Department of Physics and Astronomy, is the study of the planets, stars, and galaxies in the universe beyond the earth's atmosphere

Ravikumar, B.

54

BASIC BUSINESS STATISTICS (QA 233 -001 & 002) SPRING QUARTER, 2011 -2012 ACADEMIC YEAR  

E-Print Network (OSTI)

BASIC BUSINESS STATISTICS (QA 233 - 001 & 002) SPRING QUARTER, 2011 - 2012 ACADEMIC YEAR Instructor, Education, and Welfare regulations implementing Section 504 of the Rehabilitation Act of 1973. Section 504 to discrimination under any program or activity receiving Federal financial assistance. This regulation includes

Selmic, Sandra

55

Hutton Honors College Extracurricular Programs Questionnaire for 2011-2012 HHC Extracurricular Programming Volunteers  

E-Print Network (OSTI)

Hutton Honors College Extracurricular Programs Questionnaire for 2011-2012 HHC Extracurricular topics/issues Politics/law Environment/sustainability Ethics Business Economics issues (e.g., nat Charlene Brown Extracurricular Programs Hutton Honors College 811 E. Seventh Street Room 208 IU Bloomington

Indiana University

56

Tourism Crisis Management Institute 2011-2012 Annual ReportERIC FRIEDHEIM TOURISM INSTITUTE  

E-Print Network (OSTI)

Tourism Crisis Management Institute 2011-2012 Annual ReportERIC FRIEDHEIM TOURISM INSTITUTE Tourism Institute In a career that spanned more than 60 years, Eric Arthur Friedheim personified and shaped the travel and tourism industries into what they are today. As owner, publisher and Editor

Pilyugin, Sergei S.

57

126 COLLEGE OF ENGINEERING UNC CHARLOTTE UNDERGRADUATE CATALOG 2011-2012  

E-Print Network (OSTI)

engineering products and engineering services. Such students may choose to construct an elective option126 COLLEGE OF ENGINEERING UNC CHARLOTTE UNDERGRADUATE CATALOG 2011-2012 The William States Lee College of Engineering coe.uncc.edu Dean: Dr. Robert Johnson Associate Dean: Dr. Ronald Smelser Assistant

Xie,Jiang (Linda)

58

436 SDSU General Catalog 2011-2012 In the College of Sciences  

E-Print Network (OSTI)

of probability and mathe- matical statistics, a complementary knowledge of basic methods for data collection436 SDSU General Catalog 2011-2012 Statistics In the College of Sciences OFFICE: Geology Coordinator for Statistics: Lui Professors: Fan, Levine, Lui Associate Professor: Lin Assistant Professors

Gallo, Linda C.

59

316 College of Liberal Arts & Sciences UNC Charlotte Graduate Catalog 2011-2012  

E-Print Network (OSTI)

316 College of Liberal Arts & Sciences UNC Charlotte Graduate Catalog 2011-2012 College of Liberal Arts and Sciences clas.uncc.edu Dean: Dr. Nancy Gutierrez Senior Associate Dean: Dr. Bill Hill Interim Harrington Director of Communications: Ms. Allison Reid The College of Liberal Arts and Sciences

Xie,Jiang (Linda)

60

174 COLLEGE OF LIBERAL ARTS AND SCIENCES UNC CHARLOTTE UNDERGRADUATE CATALOG 2011-2012  

E-Print Network (OSTI)

174 COLLEGE OF LIBERAL ARTS AND SCIENCES UNC CHARLOTTE UNDERGRADUATE CATALOG 2011-2012 College of Liberal Arts and Sciences clas.uncc.edu Dean: Dr. Nancy Gutierrez Senior Associate Dean: Dr. Bill Hill. Yvette Huet Director, Liberal Arts and Sciences Advising Center: Ms. Shonta LeMaster OBJECTIVES

Xie,Jiang (Linda)

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

IMS application development Connect API Copyright IBM Corporation 2011, 2012. All rights reserved.  

E-Print Network (OSTI)

IMS application development Connect API © Copyright IBM Corporation 2011, 2012. All rights reserved. 1 of 28 Developing Connect API applications for IMS Skill Level: Beginner to Intermediate Evgeni transactions through the IMS Connect API for Java. About this tutorial This tutorial will take you through

62

Page 28 Housing Services Sonoma State University 2011-2012 Catalog Zinfandel Hall  

E-Print Network (OSTI)

its own dining hall, swimming pools, study rooms, convenience store, post office, meeting roomsPage 28 Housing Services Sonoma State University 2011-2012 Catalog Zinfandel Hall (707) 664. The Community is a unique mix of nontraditional resident hall suites and campus apartments, all located just

Ravikumar, B.

63

ECONOMICS MINOR Curriculum Guide (Based on the 2011-2012 University Catalog)  

E-Print Network (OSTI)

ECONOMICS MINOR Curriculum Guide (Based on the 2011- 2012 University Catalog) Name (Last, First ................................................................................................................................................................................................................................................................................................................................................................................................................................................ To declare a minor in Economics students must: Complete the prerequisite courses: ECON 2101, 2102; INFO 2130 Principles of Economics ­ Macro.. 3 ECON 2102 Principles of Economics - Micro............ 3 MATH 1120

Raja, Anita

64

SFU LiFeLong Learning 2011/2012 Community Report  

E-Print Network (OSTI)

Learning 2 #12;Appendix 1: Organizational Structure [ 28 ] Appendix 2: Enrolment [ 29 ] Appendix 3: FinanceSFU LiFeLong Learning 2011/2012 Community Report #12;As part of the engaged university, SFU Lifelong Learning takes pride in helping people in our community enhance their lives through education. We

65

H. C. So Page 1 Semester B 2011-2012 z Transform  

E-Print Network (OSTI)

H. C. So Page 1 Semester B 2011-2012 z Transform Chapter Intended Learning Outcomes: (i) Understanding the relationship between transform and the Fourier transform for discrete-time signals (ii) Understanding the characteristics and properties of transform (iii) Ability to compute transform and inverse

So, Hing-Cheung

66

Courses: Chemistry (CHEM) Page 271Sonoma State University 2011-2012 Catalog Chemistry (CHEM)  

E-Print Network (OSTI)

Courses: Chemistry (CHEM) Page 271Sonoma State University 2011-2012 Catalog Chemistry (CHEM) CheM 102 CheMiStry And SOCiety (3) Lecture, 2 hours; laboratory, 3 hours. An introductory course in chemistry for non- majors. Covers the basics of chemistry in an effort to better understand current

Ravikumar, B.

67

Webinar: 2011-2012 Hydrogen Student Design Contest Winners: On-Campus Tri-Generation Fuel Cell Systems  

Energy.gov (U.S. Department of Energy (DOE))

Video recording of the Fuel Cell Technologies Office webinar, 2011-2012 Hydrogen Student Design Contest Winners: On-Campus Tri-Generation Fuel Cell Systems, originally presented on September 4, 2012.

68

Page 364 Courses: Political Science (POLS) Sonoma State University 2011-2012 Catalog Political Science (POLS)  

E-Print Network (OSTI)

Page 364 Courses: Political Science (POLS) Sonoma State University 2011-2012 Catalog Political in California state and local government may be satis- fied by passing an examination in the political science department. pOlS 199 MediA: COnteMpOrAry iSSueS (2) pOlS 200 AMeriCAn pOlitiCAl SySteM (3) An examination

Ravikumar, B.

69

DOE/EA-1650: Freeport LNG Export Project and BOG/Truck Project Environmental Assessment (May 2009)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Freeport LNG Development, L.P. Freeport LNG Development, L.P. Docket Nos. CP03-75-003, CP03-75-004, CP05-361-001, and CP05-361-002 FREEPORT LNG EXPORT PROJECT and BOG/TRUCK PROJECT Environmental Assessment Cooperating Agency: U.S. Department of Energy DOE/EA - 1650 DOE Docket No. FE-08-70-LNG MARCH 2009 FEDERAL ENERGY REGULATORY COMMISSION WASHINGTON, D.C. 20426 OFFICE OF ENERGY PROJECTS In Reply Refer To: OEP/DG2E/Gas 2 Freeport LNG Development, L.P. Docket Nos. CP03-75-003, CP03-75-004 CP05-361-001 and CP05-361-002 §375.308(x) TO THE PARTY ADDRESSED: The staff of the Federal Energy Regulatory Commission (FERC or Commission) and the Department of Energy (DOE), Office of Fossil Fuels, have prepared an environmental assessment (EA) on the liquefied natural gas (LNG) facilities proposed by

70

Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC and FLNG Liquefaction 3, LLC- 14-005-CIC  

Energy.gov (U.S. Department of Energy (DOE))

Application of Freeport LNG Expansion, L.P., FLNG Liquefaction, LLC, FLNG Liquefaction 2, LLC and FLNG Liquefaction 3, LLC to Transfer Control of Long-term Authorization to Export LNG to Free Trade...

71

The structural alignment of coal and the analogous case of Argonne Upper Freeport coal  

Science Journals Connector (OSTI)

It has long been recognized that coal is somewhat aligned. Multiple techniques imply a structural alignment but its quantification has been challenging. Moreover, discrepancies exist among techniques as to whether low-rank coals are aligned. The extent of structural alignment for the rank range was quantified directly via image analysis of high-resolution transmission electron micrograph lattice fringes. Alignment was quantified, for each coal, by the contribution to the total fringe length within the prominent 45 of orientation over random orientation (1/4 of the possible orientations). It was evident that there is structural alignment across the rank range. Thus it is time for the community to desist from making the erroneous statement that: low-rank coals are randomly oriented. The slight orientation was similar for low-rank Beulah-Zap lignite and Illinois No. 6 bituminous coals (24% and 22%) with Pocahontas (lvb) coal showing slightly greater (39%) alignment with extensive alignment (65%) in the case of an anthracite coal. The degree of ordering is illustrated with the aid of false-color lattice fringe images and Rose diagrams. The fringe contribution 90 opposed to the maximum length contribution had the minimum or near minimum percentage length contribution for all coals except Upper Freeport and to a lesser degree Illinois No. 6. For the Upper Freeport coal the alignment is lower than expected given its mvb rank (14% over random) and is attributed to a variant of T-stacking for the small aromatic moieties sited perpendicular and between horizontal displaced fringes.

Jonathan P. Mathews; Atul Sharma

2012-01-01T23:59:59.000Z

72

Compiled by Erwin Wodarczak (2000, revised 2002, 2003, 2008, 2011, 2012, 2013), Tracey Krause (2006) and Max Otte (2014)  

E-Print Network (OSTI)

C. Koerner Library), thirteen public service branches and divisions, and eight internal service areas, and administrative space, was opened in 2008. As of 2008 the UBC Library consisted of 19 branchesLibrary fonds Compiled by Erwin Wodarczak (2000, revised 2002, 2003, 2008, 2011, 2012, 2013

Handy, Todd C.

73

College of Agriculture and School of Human Environmental Sciences University of Kentucky 2011-2012 Undergraduate Bulletin 90  

E-Print Network (OSTI)

College of Agriculture and School of Human Environmental Sciences University of Kentucky 2011-2012 Undergraduate Bulletin 90 M. Scott Smith, Ph.D., is Dean and Director of the College of Agriculture; Nancy M,teaching,extension,andregula- tory functions of the College of Agriculture are combined into a coordinated, mutually support

MacAdam, Keith

74

Mathematics Page 183Sonoma State University 2011-2012 Catalog Department Of mathematics anD statistics  

E-Print Network (OSTI)

Mathematics Page 183Sonoma State University 2011-2012 Catalog Department Of mathematics Programs Offered Mathematics Bachelor of Arts in Mathematics Bachelor of Science in Mathematics Cooperative Master of Arts in Mathematics (with San Francisco State University) Minor in Mathematics Minor in Math

Ravikumar, B.

75

UVM Cabot Marketing Challenge During the 2011-2012 academic year, Cabot Creamery Cooperative and UVM launched the  

E-Print Network (OSTI)

UVM Cabot Marketing Challenge During the 2011-2012 academic year, Cabot Creamery Cooperative and UVM launched the inaugural Cabot Marketing Challenge courses. Eighteen students from various majors an opportunity to work together, build a stronger community and gain hands- on marketing experience in a learning

Hayden, Nancy J.

76

Economics Page 103Sonoma State University 2011-2012 Catalog sector upon graduation and those who wish to pursue graduate  

E-Print Network (OSTI)

Economics Page 103Sonoma State University 2011-2012 Catalog sector upon graduation and those who wish to pursue graduate studies in economics, business, public administration, law, and other fields-trained economics majors as budget analysts, management trainees, marketing specialists, program planners, teachers

Ravikumar, B.

77

Chemistry Page 83Sonoma State University 2011-2012 Catalog rate for acceptance into advanced degree programs in chemistry  

E-Print Network (OSTI)

Chemistry Page 83Sonoma State University 2011-2012 Catalog rate for acceptance into advanced degree programs in chemistry and biochemistry; medical, dental, and veterinary schools; cell and molecular biology, space chemistry, teaching at all levels, medical technology, pharmaceuticals, patent law, materials

Ravikumar, B.

78

GKTC ACTIVITIES TO PROVIDE NUCLEAR MATERIAL PHYSICAL PROTECTION, CONTROL AND ACCOUNTING TRAINING FOR 2011-2012  

SciTech Connect

The GKTC was created at the Kyiv Institute of Nuclear Research as a result of collaborative efforts between the United States and Ukraine. The GKTC has been designated by the Ukrainian Government to provide the MPC&A training and methodological assistance to nuclear facilities and nuclear specialists. In 2010 the GKTC has conducted the planned assessment of training needs of Ukrainian MPC&A specialists. The objective of this work is to acquire the detailed information about the number of MPC&A specialists and guard personnel, who in the coming years should receive the further advanced training. As a result of the performed training needs evaluation the GKTC has determined that in the coming years a number of new training courses need to be developed. Some training courses are already in the process of development. Also taking into account the specific of activity on the guarding of nuclear facilities, GKTC has begun to develop the specialized training courses for the guarding unit personnel. The evaluation of needs of training of Ukrainian specialists on the physical protection shows that without the technical base of learning is not possible to satisfy the needs of Ukrainian facilities, in particular, the need for further training of specialists who maintains physical protection technical means, provides vulnerability assessment and testing of technical means. To increase the training effectiveness and create the basis for specialized training courses holding the GKTC is now working on the construction of an Interior (non-classified) Physical Protection Training Site. The objective of this site is to simulate the actual conditions of the nuclear facility PP system including the complex of engineering and technical means that will help the GKTC training course participants to consolidate the knowledge and gain the practical skills in the work with PP system engineering and technical means for more effective performance of their official duties. This paper briefly describes the practical efforts applied to the provision of physical protection specialists advanced training in Ukraine and real results on the way to implement such efforts in 2011-2012.

Romanova, Olena; Gavrilyuk, Victor I.; Kirischuk, Volodymyr; Gavrilyuk-Burakova, Anna; Diakov, Oleksii; Drapey, Sergiy; Proskurin, Dmitry; Dickman, Deborah A.; Ferguson, Ken

2011-10-01T23:59:59.000Z

79

Results of the radiological survey at the ALCOA Research Laboratory, 600 Freeport Road, New Kensington, Pennsylvania (ANK001)  

SciTech Connect

At the request of the US Department of Energy (DOE), a team from Oak Ridge National Laboratory conducted a radiological survey at the ALCOA Research Laboratory, 600 Freeport Road, New Kensington, Pennsylvania. The survey was performed on November 12, 1991. The purpose of the survey was to determine whether the property was contaminated with radioactive residues, principally [sup 238]U, as a result of work done for the Manhattan Engineer District in 1944. The survey included measurement of direct alpha and beta-gamma levels in the northeast comer of the basement of Building 29, and the collection of a debris sample from a floor drain for radionuclide analysis. The survey area was used for experimental canning of uranium slugs prior to production activities at the former New Kensington Works nearby.

Foley, R.D.; Brown, K.S.

1992-10-01T23:59:59.000Z

80

Decommissioning of the remediation systems at Waverly, Nebraska, in 2011-2012.  

SciTech Connect

The Commodity Credit Corporation of the U.S. Department of Agriculture (CCC/USDA) operated a grain storage facility in Waverly, Nebraska, from 1952 to 1974. During this time, the grain fumigant '80/20' (carbon tetrachloride/carbon disulfide) was used to preserve stored grain. In 1982, sampling by the U.S. Environmental Protection Agency (EPA) found carbon tetrachloride contamination in the town's groundwater. After an investigation of the contaminant distribution, the site was placed on the National Priority List (NPL) in 1986, and the CCC/USDA accepted responsibility for the contamination. An Interagency Compliance Agreement between the EPA and the CCC/USDA was finalized in May 1988 (EPA 1990). The EPA (Woodward-Clyde Consultants, contractor) started immediate cleanup efforts in 1987 with the installation of an air stripper, a soil vapor extraction system, a groundwater extraction well, and groundwater and soil gas monitoring wells (Woodward-Clyde 1986, 1988a,b). After the EPA issued its Record of Decision (ROD; EPA 1990), the CCC/USDA (Argonne National Laboratory, contractor) took over operation of the treatment systems. The CCC/USDA conducted a site investigation (Argonne 1991, 1992a,b), during which a carbon tetrachloride plume in groundwater was discovered northeast of the former facility. This plume was not being captured by the existing groundwater extraction system. The remediation system was modified in 1994 (Argonne 1993) with the installation of a second groundwater extraction well to contain the contamination further. Subsequently, a detailed evaluation of the system resulted in a recommendation to pump only the second well to conserve water in the aquifer (Argonne 1995). Sampling and analysis after implementation of this recommendation showed continued decreases in the extent and concentrations of the contamination with only one well pumping (Argonne 1999). The CCC/USDA issued quarterly monitoring reports from 1988 to 2009. Complete documentation of the CCC/USDA characterization and remediation efforts, including the quarterly monitoring reports, is on the compact disc inside the back cover of this report. The EPA reported on the progress of the remediation systems in a series of five-year reviews (EPA 1993, 1999, 2004, 2009). These reports and other EPA documentation are also on the compact disc inside the back cover of this report, along with the Woodward-Clyde (1986, 1988a,b) documentation cited. Starting in 2006, the analytical results for groundwater (the only medium still being monitored) showed no carbon tetrachloride concentrations above the maximum contaminant level (MCL) of 5.0 g/L. Because the cleanup goals specified in the ROD (EPA 1990) had been met, the EPA removed the site from the NPL in November 2006 (Appendix A). In 2008 the National Pollutant Discharge Elimination System (NPDES) permit for the remediation system was deactivated, and a year later the EPA released its fourth and final five-year report (EPA 2009), indicating that no further action was required for the site and that the site was ready for unlimited use. In 2011-2012, the CCC/USDA decommissioned the remediation systems at Waverly. This report documents the decommission process and closure of the site.

LaFreniere, L. M. (Environmental Science Division)

2012-06-29T23:59:59.000Z

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Common Data Set 2011-2012 J Column heading for CIP categories to include now reads: CIP 2010 Categories to Include  

E-Print Network (OSTI)

Common Data Set 2011-2012 J Column heading for CIP categories to include now reads: CIP 2010 Categories to Include J CIP category 3 description now reads: Natural resources and conservation J CIP category 5 description now reads: Area, ethnic, and gender studies J CIP category 16 description now reads

82

2011 -2012 ...real solutions  

E-Print Network (OSTI)

such as recreation potential of disused quarries, use of innovative electronic methods of environmental

Paxton, Anthony T.

83

Results of the radiological survey at the ALCOA Research Laboratory, 600 Freeport Road, New Kensington, Pennsylvania (ANK001). Environmental Restoration and Waste Management Non-Defense Programs  

SciTech Connect

At the request of the US Department of Energy (DOE), a team from Oak Ridge National Laboratory conducted a radiological survey at the ALCOA Research Laboratory, 600 Freeport Road, New Kensington, Pennsylvania. The survey was performed on November 12, 1991. The purpose of the survey was to determine whether the property was contaminated with radioactive residues, principally {sup 238}U, as a result of work done for the Manhattan Engineer District in 1944. The survey included measurement of direct alpha and beta-gamma levels in the northeast comer of the basement of Building 29, and the collection of a debris sample from a floor drain for radionuclide analysis. The survey area was used for experimental canning of uranium slugs prior to production activities at the former New Kensington Works nearby.

Foley, R.D.; Brown, K.S.

1992-10-01T23:59:59.000Z

84

U.S. Liquefied Natural Gas Imports by Point of Entry  

U.S. Energy Information Administration (EIA) Indexed Site

5,171 5,626 8,046 8,111 8,809 16,950 1997-2013 5,171 5,626 8,046 8,111 8,809 16,950 1997-2013 From Canada 0 0 0 88 139 139 2013-2013 Highgate Springs, VT 88 139 139 2013-2013 From Algeria 0 0 0 0 0 0 1973-2013 From Australia 0 0 0 0 0 0 1973-2013 From Brunei 0 0 0 0 0 0 2001-2013 From Egypt 0 0 0 0 0 0 2005-2013 Cameron, LA 2011-2011 Elba Island, GA 2011-2012 Freeport, TX 2011-2011 Gulf LNG, MS 2011-2011 From Equatorial Guinea 0 0 0 0 0 0 2007-2013 From Indonesia 0 0 0 0 0 0 1997-2013 From Malaysia 0 0 0 0 0 0 1999-2013 From Nigeria 0 0 0 0 0 2,590 1997-2013 Cove Point, MD 2,590 2011-2013 From Norway 0 0 0 0 2,709 2,918 2007-2013 Cove Point, MD 2011-2011 Freeport, TX 2,709 2,918 2013-2013 Sabine Pass, LA 2011-2012 From Oman 0 0 0 0 0 0 2000-2013 From Peru

85

Research Highlights 2011-2012  

Energy.gov (U.S. Department of Energy (DOE))

With the help of DOE funding, KLA-Tencor is developing an improved inspection tool for LED manufacturing that promises to significantly increase overall process yields and minimize expensive waste. The project is based around KLA-Tencor's Candela inspection technology and includes the successful realization of several significant technical enhancements that have improved defect sensitivity. The new tools are currently being used by a number of key manufacturers as part of the project evaluation stage. (March 2011) Learn more.

86

Dow Freeport PMDI MRU Optimization  

E-Print Network (OSTI)

Resources ? Improvement Engineer ? Process Engineer ? Mechanical Design Lead ? Technology Consultant ? Rotating Equipment Specialist ? Refrigeration Consultant ? Mechanical Engineer ? Reliability Engineer ? Plant Operations Staff ? Vendor Input 12... Resources ? Improvement Engineer ? Process Engineer ? Mechanical Design Lead ? Technology Consultant ? Rotating Equipment Specialist ? Refrigeration Consultant ? Mechanical Engineer ? Reliability Engineer ? Plant Operations Staff ? Vendor Input 12...

Litzinger, J.

87

U.S. Price of Liquefied Natural Gas Imports by Point of Entry  

U.S. Energy Information Administration (EIA) Indexed Site

2007 2008 2009 2010 2011 2012 View 2007 2008 2009 2010 2011 2012 View History U.S. Total 7.07 10.03 4.59 4.94 5.63 4.27 1985-2012 Cameron, LA -- -- 4.78 5.78 8.13 10.54 2007-2012 Cove Point, MD 7.26 9.07 4.05 5.37 5.30 13.82 2003-2012 Elba Island, GA 6.79 9.71 3.73 4.39 4.20 2.78 2003-2012 Everett, MA 7.32 10.33 5.87 4.79 4.77 3.70 2003-2012 Freeport, TX -- 13.83 4.51 6.96 9.27 10.53 2007-2012 Golden Pass, TX -- -- -- 7.90 5.36 -- 2007-2012 Gulf Gateway, LA 8.36 -- -- -- 2004-2010 Gulf LNG, MS -- -- -- -- 12.93 -- 2007-2012 Lake Charles, LA 6.88 7.63 3.32 4.05 4.18 2.10 2003-2012 Neptune Deepwater Port -- -- -- 6.41 -- -- 2007-2012 Northeast Gateway -- 12.54 6.71 5.41 -- -- 2007-2012 Sabine Pass, LA -- 11.82 4.21 5.39 7.58 7.99 2007-2012

88

Actual Crimes Reported For: Offense Type (includes attempts) 2011 2012 2013 2011 2012 2013 2011 2012 2013  

E-Print Network (OSTI)

0 0 0 0 0 Referral 0 0 0 0 0 0 0 0 0 Drug Law Violations Arrest 3 4 0 1 0 0 4 4 0 Referral 0 0 0 0 0 0 0 0 0 Liquor Law Violations Arrest 0 0 0 0 0 0 0 0 0 Referral 0 0 0 0 0 0 0 0 0 Crimes Reported and the Jeanne Clery Disclosure of Campus Security Policy and Campus Crime Statistics Act. Number of Arrests/Referrals

Veiga, Pedro Manuel Barbosa

89

Actual Crimes Reported For: Offense Type (includes attempts) 2010 2011 2012 2010 2011 2012 2010 2011 2012  

E-Print Network (OSTI)

0 0 0 0 0 Referral 0 0 0 0 0 0 0 0 0 Drug Law Violations Arrest 0 3 4 0 1 0 0 4 4 Referral 0 0 0 0 0 0 0 0 0 Liquor Law Violations Arrest 0 0 0 0 0 0 0 0 0 Referral 0 0 0 0 0 0 0 0 0 OSU-Tulsa Campus Crime Statistics Act. Number of Arrests/Referrals for Select Offenses #12;Actual Crimes Reported For

Veiga, Pedro Manuel Barbosa

90

July 27, 2012 2011 2012 2013  

E-Print Network (OSTI)

- Soccer ball - Plastic part of a wheel well - Carpet - Hubcap - Red chair - Toothbrush - Flower pot wheel cover - License plate - 20 printer cartridges - Snail shell - Old coffee mug - Water hose holder

Azevedo, Ricardo

91

INTRAMURAL SPORTS CHANGES FOR 2011-2012  

E-Print Network (OSTI)

fields will be centered in a wheel configuration on the Gold Fields, increasing the field space with a ball/bat combination that decreases the flight and speed of the ball in our recreation leagues

Ginzel, Matthew

92

FY 2011-2012 Annual Level Donors  

E-Print Network (OSTI)

Eskridge Charles B. Evans James R. Fei Charles & Rose Flanagan Robert H. Fogwell #12;Alan & Jean Fohrer. Gill James H. Gisbrecht Ahmad & Haleh Gramian Richard R. Grey Noah Grimmett (Kelly Slater Wave Company Henry T. Iida James & Daphne Jameson Max B. Johnson Roderick M. Jones Elmer F. Kaprielian David V

Wang, Hai

93

FY 2011-2012 Annual Level Donors  

E-Print Network (OSTI)

Charles B. Evans James R. Fei Charles & Rose Flanagan #12;Robert H. Fogwell Alan & Jean Fohrer The Fulton Foundation Sulie Fulton Fryer Elinor Ganzenhuber Barbara J. Gates Jonathan & Hani Geske Merwyn C. Gill James Henry T. Iida James & Daphne Jameson Max B. Johnson Roderick M. Jones Elmer F. Kaprielian David V

Wang, Hai

94

FY 2011-2012 Annual Level Donors  

E-Print Network (OSTI)

Eskridge Charles B. Evans James R. Fei Charles & Rose Flanagan #12;Robert H. Fogwell Alan & Jean Fohrer. Gill James H. Gisbrecht Ahmad & Haleh Gramian Richard R. Grey Noah Grimmett (Kelly Slater Wave Company Henry T. Iida James & Daphne Jameson Max B. Johnson Roderick M. Jones Elmer F. Kaprielian David V

Wang, Hai

95

Freeport, Maine: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

570242°, -70.1031057° 570242°, -70.1031057° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.8570242,"lon":-70.1031057,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

96

Cyclohexanone 1 Steam Optimization, Freeport Texas  

E-Print Network (OSTI)

Question temperature setpoints optimize supply/return delta T Temperature setback during unoccupied hours Thermal Energy Storage Question humidity setpoints Increase chilled water setpoint Shut systems off during non-production Investigate Free Cooling... Compressed Air Operate minimum number of compressors Cool air intake Reduce system pressure Use a booster compressor for small, high pressure needs Eliminate air leakage Install central compressor controls system Repair air/water separators Recover heat...

Morales, J. R.

97

FREEPORT HARBOR, TEXAS CHANNEL IMPROVEMENT PROJECT  

E-Print Network (OSTI)

the Gulf of Mexico; a main channel 45 feet deep and 400 feet wide; a Brazos Harbor channel 36 feet deep-loaded to traverse the waterway. The current channel depth requires that large crude carriers remain offshore and transfer their cargo into smaller crude tankers for the remainder of the voyage. This lightering operation

US Army Corps of Engineers

98

FREEPORT HARBOR, TEXAS CHANNEL IMPROVEMENT PROJECT  

E-Print Network (OSTI)

the Gulf of Mexico; a main channel 45 feet deep and 400 feet wide; a Brazos Harbor channel 36 feet deep requires that large crude carriers remain offshore and transfer their cargo into smaller crude tankers for the remainder of the voyage. This lightering operation takes place in the Gulf of Mexico where the two ships

US Army Corps of Engineers

99

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

NLE Websites -- All DOE Office Websites (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

100

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

102

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

103

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

104

Beta decay of Ga-62  

E-Print Network (OSTI)

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

105

Common Data Set 2011-2012 2011-2012 Common Data Set  

E-Print Network (OSTI)

"Nonresident aliens." Complete the "Total Undergraduates" column only if you cannot provide data for the first aliens 67 216 Hispanic 95 274 Black or African American

Royer, Dana

106

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

107

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

108

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

109

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

110

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

111

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

112

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto

1981-01-01T23:59:59.000Z

113

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network (OSTI)

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

114

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

115

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network (OSTI)

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

116

GaAsbased quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

117

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

118

Coulomb excitation of 73Ga  

E-Print Network (OSTI)

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekstrm; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Krll; R. Krcken; U. Kster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

119

Charakterisierung und Prparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network (OSTI)

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere (more)

Ebbers, Andr

2003-01-01T23:59:59.000Z

120

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

122

U.S. Price of Liquefied Natural Gas Imports by Point of Entry  

U.S. Energy Information Administration (EIA) Indexed Site

Apr-13 May-13 Jun-13 Jul-13 Aug-13 Sep-13 View Apr-13 May-13 Jun-13 Jul-13 Aug-13 Sep-13 View History U.S. Total 4.90 4.51 8.65 4.59 7.42 9.96 1997-2013 From Canada -- -- -- 13.37 13.54 10.52 2013-2013 Highgate Springs, VT 13.37 13.54 10.52 2013-2013 From Algeria -- -- -- -- -- -- 1989-2013 From Australia -- -- -- -- -- -- 1997-2013 From Brunei -- -- -- -- -- -- 2001-2013 From Egypt -- -- -- -- -- -- 2003-2013 Cameron, LA 2011-2011 Elba Island, GA 2011-2012 Freeport, TX 2011-2011 Gulf LNG, MS 2011-2011 From Equatorial Guinea -- -- -- -- -- -- 2007-2013 From Indonesia -- -- -- -- -- -- 1997-2013 From Malaysia -- -- -- -- -- -- 1999-2013 From Nigeria -- -- -- -- -- 15.74 1994-2013 Cove Point, MD 15.74 2011-2013 From Norway -- -- -- -- 14.85 14.85 2007-2013

123

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

124

U.S. Liquefied Natural Gas Exports by Point of Exit  

U.S. Energy Information Administration (EIA) Indexed Site

21 15 12 8 9 12 1997-2013 21 15 12 8 9 12 1997-2013 To Brazil 0 0 0 0 0 0 2010-2013 Freeport, TX 2011-2012 Sabine Pass, LA 2011-2011 To Canada 6 9 8 5 8 7 2007-2013 Sweetgrass, MT 6 9 8 5 8 7 2012-2013 To Chile 0 0 0 0 0 0 2011-2013 Sabine Pass, LA 2011-2011 To China 0 0 0 0 0 0 2011-2013 Kenai, AK 2011-2011 Sabine Pass, LA 2011-2011 To India 0 0 0 0 0 0 2010-2013 Freeport, TX 2011-2012 Sabine Pass, LA 2011-2011 To Japan 0 0 0 0 0 0 2010-2013 Cameron, LA 2011-2011 Kenai, AK 2011-2012 Sabine Pass, LA 2012-2012 To Mexico 15 6 3 3 2 4 1997-2013 Nogales, AZ 10 6 3 3 2 4 2012-2013 Otay Mesa, CA 5 2011-2013 To Portugal 2012-2012 Sabine Pass, LA 2012-2012 To Russia 0 0 0 0 0 0 2007-2013 To South Korea 0 0 0 0 0 0 2009-2013 Freeport, TX

125

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
126

U.S. LNG Imports from Algeria  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

127

U.S. LNG Imports from Other Countries  

Annual Energy Outlook 2012 (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

128

U.S. LNG Imports from Egypt  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

129

U.S. LNG Imports from Equatorial Guinea  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

130

U.S. LNG Imports from Norway  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

131

U.S. LNG Imports from Indonesia  

Annual Energy Outlook 2012 (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

132

U.S. LNG Imports from Trinidad/Tobago  

Annual Energy Outlook 2012 (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

133

U.S. LNG Imports from Yemen  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

134

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

135

U.S. LNG Imports from Brunei  

Annual Energy Outlook 2012 (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

136

U.S. LNG Imports from Nigeria  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

137

U.S. LNG Imports from Oman  

Annual Energy Outlook 2012 (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

138

U.S. LNG Imports from Peru  

Annual Energy Outlook 2012 (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

139

U.S. LNG Imports from Malaysia  

Gasoline and Diesel Fuel Update (EIA)

Charles, LA LNG Imports from Canada Highgate Springs, VT Champlain, NY LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

140

U.S. LNG Imports from Qatar  

Annual Energy Outlook 2012 (EIA)

Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

U.S. LNG Imports from Brunei  

Annual Energy Outlook 2012 (EIA)

LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial...

142

U.S. LNG Imports from Equatorial Guinea  

Annual Energy Outlook 2012 (EIA)

Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

143

U.S. LNG Imports from Other Countries  

Annual Energy Outlook 2012 (EIA)

Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

144

U.S. LNG Imports from Oman  

Gasoline and Diesel Fuel Update (EIA)

LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial...

145

U.S. Natural Gas Exports to Mexico  

Annual Energy Outlook 2012 (EIA)

LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial...

146

U.S. LNG Imports from Norway  

Annual Energy Outlook 2012 (EIA)

Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake...

147

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

148

Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy  

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

149

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network (OSTI)

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

150

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

151

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

152

Microsoft Word - EJ 2011-2012 Report.docx  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Message from Dave Geiser Environmental justice (EJ) is the fair treatment and meaningful involvement of all people regardless of race, color, national origin, or income with respect to the development, implementation, and enforcement of environmental laws, regulations, and policies. On February 11, 1994, President Clinton issued Executive Order (EO) 12898, Federal Actions to Address Environmental Justice in Minority Populations and Low-Income Populations, and he tasked each federal agency to make achieving EJ part of its mission. EO 12898 also states "each federal agency responsibility under this order shall apply equally to Native American programs."

153

2010-2011 69 2011-2012 88  

E-Print Network (OSTI)

Faculty Teaching Load Total number of semester credit hours in organized teaching courses taught per Profile (In field within one year of graduation). For each of the three most recent years, the number

154

2010-2011 18 2011-2012 27  

E-Print Network (OSTI)

is obtained by dividing the number semsters by three. 4 Employment Profile (In field within one year receiving Average External Funds per Faculty Total External Funds 13 Faculty Teaching Load Total number of semester credit hours in organized teaching courses taught pe

155

2010-2011 2 2011-2012 3  

E-Print Network (OSTI)

enrolled for the last three fall semesters. NO CHANGE 4 Employment Profile (In field within one year External Review Date of last formal external review, updated when changed 13 Faculty Teaching Load Total number of semester credit hours in organized teaching courses taught per academic year by core faculty

156

2010-2011 101 2011-2012 97  

E-Print Network (OSTI)

. 4 Employment Profile (In field within one year of graduation). For each of the three most recent External Review Date of last formal external review, updated when changed 13 Faculty Teaching Load Total number of semester credit hours in organized teaching courses taught per academic year by core faculty

157

2009-2010 1 2011-2012 4  

E-Print Network (OSTI)

Teaching Load Total number of semester credit hours in organized teaching courses taught per academic year's program or at least 30 SCH towards a graduate degree. 4 Employment Profile (In field within one year

158

2010-2011 0 2011-2012 0  

E-Print Network (OSTI)

by dividing the number semsters by three. 4 Employment Profile (In field within one year of graduation receiving Average External Funds per Faculty Total External Funds 13 Faculty Teaching Load Total number of semester credit hours in organized teaching courses taught per academic y

159

JAGDAYS 2011-2012 IUPUI Office of Campus Visits  

E-Print Network (OSTI)

-in and assistance as needed. You should park in the Vermont Street Visitor's Garage (directions are available are extremely limited for this program. If you cannot attend your reserved JagDay, please be sure to cancel your registration, and reschedule your visit. You will be walking outside, so please dress for the weather, and wear

Zhou, Yaoqi

160

Administration and Organization 6 SDSU GRADUATE BULLETIN 2011-2012  

E-Print Network (OSTI)

. . . . . . . . . . . . Geoffrey W. Chase Imperial Valley Campus . . . . . . . . . . . . . . . . . . . . . . David E. Pearson the Imperial Valley Campus; Dean of the Graduate Division or designee, who will chair the committee; Provost

Ponce, V. Miguel

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
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161

2011/2012 Report to Council June 21, 2011  

E-Print Network (OSTI)

with a number of CFB volunteers to bag groceries and encourage customers to purchase food donations for the CFB. I would like to congratulate the CFB staff and the volunteers for doing an amazing job! SUSTAIN SU

MacMillan, Andrew

162

Page 1 of 3 Awardees: 2011-2012  

E-Print Network (OSTI)

History & Bioethics Medicine & Public Health 5 Schmuhl, Nicholas Brigham Social Determinants-Health Service Status Transitional Model Zimmerman, David Industrial Engineering Engineering Robert Wood Johnson Of The Validity of a Health Care Delivery Efficiency Measure Zimmerman, David Industrial & Systems Engineering

Sheridan, Jennifer

163

SDSU General Catalog 2011-2012 399 Recreation and Tourism  

E-Print Network (OSTI)

, adventure and ecotourism services, and lodging enterprises. The sustainable tourism management emphasis

Gallo, Linda C.

164

Semester: WS 2011/2012 UnivIS -Lehrveranstaltungsplan  

E-Print Network (OSTI)

?bungen Allgemeine und Anorganische Chemie für Molecular Life Science (Weimar) AM 4 Physik I (UE), Gruppe Anorganische Chemie für Molecular Life Science (14tg.) (Pulz) Kurssaal Chemie Do Allgemeine Chemie (LS1100 Allgemeine und Anorganische Chemie für Molecular Life Science (14tg.) (Pulz) Kurssaal Chemie Kurs Biologie

Groppe, Sven

165

COLBY COLLEGE 2011-2012 Introduction Page 3  

E-Print Network (OSTI)

and COOT Page 6 Colby Garden Page 7 Composting Page 8--9 Recycling Page 10 Sustainable Seafood Page 11 a commercial food system works by taking field trips to both organic and conventional farms, restaurants

Wilson, Herb

166

Institute for Biophysical Dynamics 2011-2012 Interdisciplinary Research Seminars  

E-Print Network (OSTI)

for Integrative Science W301/303 at noon (unless otherwise noted) Autumn, 2011 Tuesday, 27 September H. Ronald-channel block of neuronal sodium channels Hosted by Eduardo Perozo Tuesday, 10 April Linda Kenney, PhD, Dept

Lee, Ka Yee C.

167

Radiation Health Physics 2011-2012 School Year  

E-Print Network (OSTI)

& Discrimination (3): RHP 415 2 Nuclear Rulels & Reg RHP 435 4 Shielding & Ext Dosimetry RHP 481 4 Radiation

Tullos, Desiree

168

PORTLAND STATE UNIVERSITY HOUSING 2011-2012 CONTRACT TERMS & CONDITIONS  

E-Print Network (OSTI)

June 16, 2012. i. Failure to officially check-in (section 6 below) does not release Resident from). Occupancy of the Unit will not exceed the occupancy limitations specified in the University Housing Handbook the designated Area Desk, and applies whether or not a student is physically occupying the assigned Space. j

169

MA10192: Mathematics I 2011-2012 semester 1  

E-Print Network (OSTI)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 3.2 Estimating area . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 3.3 Definition . . . . . . . . . . . . . . . . . . . . . . . . . 51 3.5.1 The substitution rule . . . . . . . . . . . . . . . . . . . . . 52 3.5.2 Integration . . . . . . . . . . . . . . . . . . . . . . 66 3.10 Hyperbolic substitution . . . . . . . . . . . . . . . . . . . . . . . 67 3.11 Area between

Opmeer, Mark

170

Financial Aid Office 2011-2012 FINANCIAL AID TIMELINE  

E-Print Network (OSTI)

at www.pin.ed.gov. The PIN will be used to electronically sign your FAFSA on the Web and complete your

Mohaghegh, Shahab

171

Fellowships for Scholars Academic Year 2011-2012  

E-Print Network (OSTI)

, education, medicine, mental health, and social work are privileged domains for the study of moral economies Moral issues­viewed broadly­have become crucial in the public sphere. Whether they concern abortion

172

Costs for Academic Year 2011-2012 Tennessee Resident  

E-Print Network (OSTI)

Engineering Nuclear Engineering Master of Science: Aerospace Engineering Biomedical Engineering Biosystems & Engineering Mechanical Engineering MS-MBA Program Nuclear Engineering Reliability & Maintainability Industrial Engineering Materials Science & Engineering Mechanical Engineering Nuclear Engineering ACADEMICS

Tennessee, University of

173

2011-2012 SECTION II: HEAVY ION REACTIONS  

NLE Websites -- All DOE Office Websites (Extended Search)

and J. B. Natowitz Investigating the experimental capabilities of the quadrupole thermometer S. Wuenschel, J. B. Natowitz, M. Barbui, N. Blando, A. Bonasera, G. Guilani, K....

174

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network (OSTI)

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

175

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

176

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

177

Freeport, TX Liquefied Natural Gas Exports Price to Brazil (Dollars...  

Annual Energy Outlook 2012 (EIA)

Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's -- 12.74 11.19 --...

178

Freeport, TX Liquefied Natural Gas Exports to Brazil (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's 0 0 0 2010's 0 2,581 8,142 0...

179

Freeport, TX LNG Imports (Price) from Yemen (Dollars per Thousand...  

Gasoline and Diesel Fuel Update (EIA)

Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's -- 10.30...

180

Ohmic contacts to n-GaSb  

E-Print Network (OSTI)

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


181

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

182

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

183

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

184

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90 misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

185

GaNInGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaNInGaN LED devices. While most studies focus on output saturation known as current droop from InGaN layer effects, we show an alike influence from p-type GaNs inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

186

GaTe semiconductor for radiation detection  

DOE Patents (OSTI)

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

187

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network (OSTI)

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

188

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

189

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

190

Defect studies in low-temperature-grown GaAs  

SciTech Connect

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

191

Defect studies in low-temperature-grown GaAs  

SciTech Connect

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

192

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network (OSTI)

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

193

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

194

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

195

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

196

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

197

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

198

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

199

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

200

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmauntersttzter Molekularstrahlepitaxie (MBE). Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, und (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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201

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (15) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

202

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

203

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

204

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

205

U.S. Price of Liquefied Natural Gas Exports by Point of Exit  

U.S. Energy Information Administration (EIA) Indexed Site

2007 2008 2009 2010 2011 2012 View 2007 2008 2009 2010 2011 2012 View History U.S. Total 6.23 7.69 8.40 9.53 10.54 12.82 1985-2012 To Brazil -- -- -- 7.50 11.40 11.19 2007-2012 Freeport, TX -- -- -- -- 12.74 11.19 2007-2012 Sabine Pass, LA -- -- -- 7.50 11.00 -- 2007-2012 To Canada 12.07 -- -- -- -- 13.29 2007-2012 Buffalo, NY 12.07 -- -- -- 2006-2010 Sweetgrass, MT -- 13.29 2011-2012 To Chile -- -- -- -- 13.91 -- 2007-2012 Sabine Pass, LA -- -- -- -- 13.91 -- 2007-2012 To China -- -- -- -- 12.25 -- 2007-2012 Kenai, AK -- -- -- -- 10.61 -- 2007-2012 Sabine Pass, LA -- -- -- -- 12.25 -- 2007-2012 To India -- -- -- 7.56 8.23 11.10 2007-2012 Freeport, TX -- -- -- 7.56 8.66 11.10 2007-2012 Sabine Pass, LA -- -- -- -- 7.85 -- 2007-2012

206

U.S. Liquefied Natural Gas Exports by Point of Exit  

U.S. Energy Information Administration (EIA) Indexed Site

2007 2008 2009 2010 2011 2012 View 2007 2008 2009 2010 2011 2012 View History U.S. Total 48,485 39,217 33,355 64,793 70,001 28,298 1985-2012 To Brazil 0 0 0 3,279 11,049 8,142 2007-2012 Freeport, TX 0 0 0 0 2,581 8,142 2007-2012 Sabine Pass, LA 0 0 0 3,279 8,468 0 2007-2012 To Canada 2 0 0 0 0 2 2007-2012 Buffalo, NY 2 0 0 0 2006-2010 Sweetgrass, MT 0 2 2011-2012 To Chile 0 0 0 0 2,910 0 2007-2012 Sabine Pass, LA 0 0 0 0 2,910 0 2007-2012 To China 0 0 0 0 6,201 0 2007-2012 Kenai, AK 0 0 0 0 1,127 0 2007-2012 Sabine Pass, LA 0 0 0 0 6,201 0 2007-2012 To India 0 0 0 2,873 12,542 3,004 2007-2012 Freeport, TX 0 0 0 2,873 5,993 3,004 2007-2012 Sabine Pass, LA 0 0 0 0 6,549 0 2007-2012 To Japan 2,822 2,741 5,037 2010-2012

207

U.S. Price of Liquefied Natural Gas Exports by Point of Exit  

U.S. Energy Information Administration (EIA) Indexed Site

Apr-13 May-13 Jun-13 Jul-13 Aug-13 Sep-13 View Apr-13 May-13 Jun-13 Jul-13 Aug-13 Sep-13 View History U.S. Total 11.36 12.84 13.38 12.89 13.25 13.53 1997-2013 To Brazil -- -- -- -- -- -- 2010-2013 Freeport, TX 2011-2012 Sabine Pass, LA 2011-2011 To Canada 14.55 14.55 14.60 15.01 14.01 13.94 2007-2013 Sweetgrass, MT 14.55 14.55 14.60 15.01 14.01 13.94 2012-2013 To Chile -- -- -- -- -- -- 2011-2013 Sabine Pass, LA 2011-2011 To China -- -- -- -- -- -- 2011-2013 Kenai, AK 2011-2011 Sabine Pass, LA 2011-2011 To India -- -- -- -- -- -- 2010-2013 Freeport, TX 2011-2012 Sabine Pass, LA 2011-2011 To Japan -- -- -- -- -- -- 2010-2013 Cameron, LA 2011-2011 Kenai, AK 2011-2012 Sabine Pass, LA 2012-2012 To Mexico 10.13 10.36 10.40 9.91 9.77 12.81 1992-2013 Nogales, AZ 10.43 10.36 10.40 9.91 9.77 12.81 2012-2013

208

Multiband GaNAsP Quaternary Alloys  

SciTech Connect

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

209

Implantation of carbon in GaAs  

SciTech Connect

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

210

O?[]O? nuclear ?-decay of ?Ga  

E-Print Network (OSTI)

The branching ratio for the ?-Decay of ?Ga to the first excited O? state in ?Zn has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

211

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16 from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

212

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

213

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

214

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network (OSTI)

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

215

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

216

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network (OSTI)

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

217

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network (OSTI)

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

218

Kohlenstoffhaltige ternre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternren Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner drften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

219

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

220

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

222

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

223

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

224

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

225

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network (OSTI)

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

226

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

NLE Websites -- All DOE Office Websites (Extended Search)

Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

227

P-type doping of GaN  

SciTech Connect

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

228

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN FranzKeldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

229

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

230

Vacancy-Induced 22 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 22 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

231

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Nel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

232

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

233

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

234

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

235

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

236

Localized corrosion of GaAs surfaces and formation of porous GaAs  

SciTech Connect

The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

Schmuki, P.; Vitus, C.M.; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States); Fraser, J.; Graham, M.J. [National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

1995-12-01T23:59:59.000Z

237

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

238

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; zgr, .; Morko, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

239

The development of integrated chemical microsensors in GaAs  

SciTech Connect

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

240

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network (OSTI)

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

The Essentials for GA Water Planning The Relationship  

E-Print Network (OSTI)

Water Plan and the Alabama-Florida-Georgia Water Sharing Dispute (The failure to agree on the two Management F. Conservation & Reuse a. Programs for Water Use Efficiency b. Consumptive Use & Return Flows GThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

242

Structure of a Si(100)22-Ga surface  

Science Journals Connector (OSTI)

The 22 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

243

Electronic structure of metallic antiperovskite compound GaCMn3  

Science Journals Connector (OSTI)

We have investigated the electronic structures of antiperovskite GaCMn3 and related Mn compounds SnCMn3, ZnCMn3, and ZnNMn3. In the paramagnetic state of GaCMn3, the Fermi surface nesting feature along the ?R direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector Q??R. Calculated susceptibilities confirm the nesting scenario for GaCMn3, and also explain various magnetic structures of other antiperovskite compounds. Through the band folding effect, the AFM phase of GaCMn3 is stabilized. Nearly equal densities of states at the Fermi level in the ferromagnetic and AFM phases of GaCMn3 indicate that two phases are competing in the ground state.

J. H. Shim; S. K. Kwon; B. I. Min

2002-07-10T23:59:59.000Z

244

Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers  

Science Journals Connector (OSTI)

In0.135Ga0.865N/GaN pin solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (I...

X. M. Cai; Y. Wang; Z. D. Li; X. Q. Lv; J. Y. Zhang; L. Y. Ying

2013-05-01T23:59:59.000Z

245

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network (OSTI)

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

246

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter

247

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network (OSTI)

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

248

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network (OSTI)

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

249

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network (OSTI)

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

250

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network (OSTI)

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

251

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

252

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1  

E-Print Network (OSTI)

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1 Jie Lian,2,3 Wei Lu,4 and Lumin Wang1,5,* 1 Department of Materials Science and Engineering, University Arbor, Michigan 48109, USA 3 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer

Lu, Wei

253

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network (OSTI)

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

254

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

255

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

256

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gmez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

257

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castao, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

258

U.S. LNG Imports from Other Countries  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

259

U.S. LNG Imports from Egypt  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

260

U.S. LNG Imports from Malaysia  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

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261

U.S. LNG Imports from Peru  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

262

U.S. LNG Imports from Trinidad/Tobago  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

263

U.S. LNG Imports from Algeria  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

264

U.S. LNG Imports from Nigeria  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

265

U.S. LNG Imports from Qatar  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

266

U.S. LNG Imports from Yemen  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

267

U.S. Total Exports  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

268

U.S. LNG Imports from Indonesia  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

269

U.S. LNG Imports from Canada  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

270

U.S. LNG Imports from Norway  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

271

U.S. LNG Imports from Equatorial Guinea  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

272

U.S. LNG Imports from Australia  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

273

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

Noyes, MN Warroad, MN Babb, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Galvan Ranch, TX LNG Imports from Algeria LNG Imports from Australia LNG Imports from Brunei LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Elba Island, GA Freeport, TX Gulf LNG, MS LNG Imports from Equatorial Guinea LNG Imports from Indonesia LNG Imports from Malaysia LNG Imports from Nigeria Cove Point, MD LNG Imports from Norway Cove Point, MD Freeport, TX Sabine Pass, LA LNG Imports from Oman LNG Imports from Peru Cameron, LA Freeport, TX LNG Imports from Qatar Elba Island, GA Golden Pass, TX Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Sabine Pass, LA LNG Imports from United Arab Emirates LNG Imports from Yemen Everett, MA Freeport, TX Sabine Pass, LA LNG Imports from Other Countries Period: Monthly Annual

274

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

275

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

276

Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells  

Science Journals Connector (OSTI)

Low-temperature decay times ?PL are reported for a series of InxGa1-xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4?Lz?10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in ?PL with increasing In composition (0.05?x?0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

Haiping Yu; Christine Roberts; Ray Murray

1995-07-15T23:59:59.000Z

277

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

278

Photovoltaic properties of GaAs:Be nanowire arrays  

SciTech Connect

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.

Bouravleuv, A. D.; Beznasyuk, D. V.; Gilstein, E. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Tchernycheva, M.; Luna Bugallo, A. De; Rigutti, L. [University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France); Yu, L. [CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France); Proskuryakov, Yu. [University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom); Shtrom, I. V.; Timofeeva, M. A. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I.; Cirlin, G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-06-15T23:59:59.000Z

279

Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires  

SciTech Connect

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Choi, J. W.; Ji, H.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2011-12-23T23:59:59.000Z

280

Effects of Ga ion-beam irradiation on monolayer graphene  

SciTech Connect

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)] [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China) [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-08-12T23:59:59.000Z

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) experiments were performed on In 0.22 Ga 0.78 As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off) and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth.

K. Chattopadhyay; J. Aubel; S. Sundaram; J. E. Ehret; R. Kaspi; Keith R. Evans

1997-01-01T23:59:59.000Z

282

The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency  

Science Journals Connector (OSTI)

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) ... quantum dot effectively enhance the overall power conversion efficiency

Chen-Chen Chung; Binh Tinh Tran; Hau-Vei Han; Yen-Teng Ho

2014-03-01T23:59:59.000Z

283

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

Vclav tengl, Jil Henych, Michaela Slun, Tom Matys Grygar, Jana Velick, Martin Kormunda

2014-01-01T23:59:59.000Z

284

Kinetics of indirect photoluminescence in GaAs/AlxGa1?x As double quantum wells in a random potential with a large amplitude  

Science Journals Connector (OSTI)

The kinetics of indirect photoluminescence of GaAs/AlxGa1?x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is ...

L. V. Butov; A. V. Mintsev; A. I. Filin

1999-05-01T23:59:59.000Z

285

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

286

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

287

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

288

Polarization charges and polarization-induced barriers in AlxGa1xNGaN and InyGa1yNGaN heterostructures  

E-Print Network (OSTI)

N?GaN heterostructures L. Jia,a) E. T. Yu, D. Keogh, and P. M. Asbeck Department of Electrical and Computer EngineeringGa1 yN surrounded by n-GaN, capacitance­ voltage profiling studies combined with elementary will most likely require further improvements in p-type GaN conduc- tivity and fabrication of low-resistance

Yu, Edward T.

289

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

290

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

291

Lattice vibrations of pure and doped GaSe  

SciTech Connect

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

292

GaAs solar cells close to the thermodynamic limit  

Science Journals Connector (OSTI)

The efficiency of GaAs solar cells can be increased by applying angularly selective filters. It is shown in terms of detailed balance model, why this happens and the concept is proven...

Hoehn, Oliver; Kraus, Tobias; Bauhuis, Gerard; Schwarz, Ulrich T; Blsi, Benedikt

293

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network (OSTI)

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

294

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

295

Exciton front propagation in photoexcited GaAs quantum wells  

E-Print Network (OSTI)

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton ...

Yang, Sen

296

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents (OSTI)

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

297

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

298

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang

2011-10-01T23:59:59.000Z

299

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

300

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network (OSTI)

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network (OSTI)

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

302

Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy  

Science Journals Connector (OSTI)

The electronic properties of uncharged Ga monovacancies in GaP(110) surfaces are determined from voltage-dependent scanning tunneling microscopy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occupied defect states exist. Depressed dangling bonds in the occupied-state images indicate an inward relaxation of the neighboring P atoms. The results agree with recent theoretical work.

Ph. Ebert and K. Urban

1998-07-15T23:59:59.000Z

303

Microscopic identification of the compensation mechanisms in Si-doped GaAs  

Science Journals Connector (OSTI)

The compensation mechanisms of SiGa donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the SiGa donors are consecutively electrically deactivated by SiAs acceptors, Si clusters, and SiGa-Ga-vacancy complexes. A microscopic model based on the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. 1996 The American Physical Society.

C. Domke, Ph. Ebert, M. Heinrich, and K. Urban

1996-10-15T23:59:59.000Z

304

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

305

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

306

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

307

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

308

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

309

Metal contacts on ZnSe and GaN  

SciTech Connect

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

310

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network (OSTI)

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

311

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

312

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network (OSTI)

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

313

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

NLE Websites -- All DOE Office Websites (Extended Search)

Melting Behavior of GaN Nanotubes. Atomic-Level Study of Melting Behavior of GaN Nanotubes. Abstract: Molecular dynamics simulations with a Stillinger-Weber potential have been...

314

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

315

Device-level thermal analysis of GaN-based electronics  

E-Print Network (OSTI)

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

316

Structural ordering and interface morphology in symmetrically strained(GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)  

Science Journals Connector (OSTI)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest ?110? directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation. A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

C. Giannini; L. Tapfer; Y. Zhuang; L. De Caro; T. Marschner; W. Stolz

1997-02-15T23:59:59.000Z

317

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network (OSTI)

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

318

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

319

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

320

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Universit, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

322

Novel photoaffinity ligands for the GA-receptor  

SciTech Connect

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. (USDA/ARS Biosciences Research Laboratory, Fargo, ND (USA))

1990-05-01T23:59:59.000Z

323

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

324

Invited Paper GaAs/A1O photonic bandgap material fabrication and characterization  

E-Print Network (OSTI)

semiconductor crystals, photonic crystals do not occur naturally. There are, therefore, several seemingly direct bandgap semiconductors, such as GaAs, A1GaAs, InP, InGaAsP, etc., in which the radiative-dimensional photonic bandgaps for microwave and millimeter-wave radiation, and for shorter optical wavelengths in one

Zhou, Weidong

325

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network (OSTI)

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

326

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

327

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network (OSTI)

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

328

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network (OSTI)

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

329

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

330

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

331

Surface morphology and magnetic anisotropy in (Ga,Mn)As  

E-Print Network (OSTI)

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

S. Piano; X. Marti; A. W. Rushforth; K. W. Edmonds; R. P. Campion; O. Caha; T. U. Schulli; V. Holy; B. L. Gallagher

2010-10-01T23:59:59.000Z

332

Operating experience with a GaAs photoemission electron source  

SciTech Connect

We report on the development of several operating procedures that promise to make GaAs photoemission electron sources easier to construct, more reliable to operate, and more amenable to use in dynamic vacuum systems. We describe in particular a method for ''ohmically'' heating a <100> crystal of GaAs under vacuum to approximately 600 /sup 0/C. We also discuss our observations of the role of oxygen in the activation of the crystal surface, the use of continuous cesiation, and of the performance of the crystal under varying vacuum conditions.

Tang, F.C.; Lubell, M.S.; Rubin, K.; Vasilakis, A.; Eminyan, M.; Slevin, J.

1986-12-01T23:59:59.000Z

333

An investigation on reliable passivation of GaP  

E-Print Network (OSTI)

reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index... reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index...

Greaves King, Carlos A.

2012-06-07T23:59:59.000Z

334

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

335

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells  

Science Journals Connector (OSTI)

Dry etch induced damage of GaAs/InGaAs/GaAs heterostructures in an electron cyclotron resonance (ECR) argon discharge has been investigated as a function of additional radio frequency self?biasing of the sample and process pressure in argon ECR discharges. We used depth resolved photoluminescence measurements to determine the influence of the etch process on the samples. We observe a decreasing damage depth for smaller bias voltages reaching its lowest value of 1.7 nm at 20 V bias and a pressure of 0.15 Pa. For lower pressures we observe a strong increase of the damage which is attributed predominantly to high energetic vacuum ultraviolet radiation from the ECR region.

T. Bickl; B. Jacobs; J. Straka; A. Forchel

1993-01-01T23:59:59.000Z

336

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

337

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

338

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy  

Science Journals Connector (OSTI)

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As4 pressure. Additionally, due to the small As4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40?m.

C. Colombo; D. Spirkoska; M. Frimmer; G. Abstreiter; A. Fontcuberta i Morral

2008-04-28T23:59:59.000Z

339

Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures  

Science Journals Connector (OSTI)

The carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well heterostructures have been determined as a function of the incorporated compressive strain in the (GaIn)As quantum-well layer by applying magneto-optical studies. The precise structural parameters, i.e., individual layer thicknesses, strain values, and crystalline perfection, have been determined independently by high-resolution x-ray diffraction and transmission electron microscopy. By analyzing both the allowed and forbidden optical transitions as a function of the magnetic field, detected by polarization-dependent magnetophotoluminescence excitation spectroscopy, the exciton binding energy as well as the effective in-plane electron and heavy-hole masses have been determined quantitatively as a function of strain. The theoretically predicted significant decrease of the in-plane heavy-hole mass with increasing strain has been observed. The obtained results are discussed and compared with the contradictory results reported in the literature.

M. Volk; S. Lutgen; T. Marschner; W. Stolz; E. O. Gbel; P. C. M. Christianen; J. C. Maan

1995-10-15T23:59:59.000Z

340

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy  

SciTech Connect

We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial In{sub x}Ga{sub 1-x}As (x{approx}0.20) inserts with thicknesses from 36 to 220 nm with {+-}10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L. [Department of Electrical Engineering and California Nano-Systems Institute, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2010-12-13T23:59:59.000Z

342

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

343

Structure of negatively charged muonium in n-type GaAs  

Science Journals Connector (OSTI)

Muon level-crossing resonance and muon-spin-rotation measurements on heavily doped n-type GaAs:Si and GaAs:Te show that the majority of positive muons implanted at room temperature form an isolated diamagnetic muonium center located at a high-symmetry site with Ga neighbors along the ?111? direction(s). These experiments, together with theoretical considerations, imply that negatively charged muonium is at or near the tetrahedral interstitial site with four Ga nearest-neighbor atoms. Except for zero-point energy differences, these results should model negatively charged isolated hydrogen in GaAs.

K.H. Chow; R.F. Kiefl; W.A. MacFarlane; J.W. Schneider; D.W. Cooke; M. Leon; M. Paciotti; T.L. Estle; B. Hitti; R.L. Lichti; S.F.J. Cox; C. Schwab; E.A. Davis; A. Morrobel-Sosa; L. Zavieh

1995-05-15T23:59:59.000Z

344

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network (OSTI)

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

345

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network (OSTI)

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

346

Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy  

SciTech Connect

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.

Titus, J.; Perera, A. G. U. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)] [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Nguyen, H. P. T.; Mi, Z. [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)] [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)

2013-03-25T23:59:59.000Z

347

GA103 a microprogrammable processor for online filtering  

E-Print Network (OSTI)

GA103 is a 16 bit microprogrammable processor, which emulates the PDP 11 instruction set. It is based on the Am2900 slices. It allows user- implemented microinstructions and addition of hardwired processors. It will perform online filtering tasks in the NA14 experiment at CERN, based on the reconstruction of transverse momentum of photons detected in a lead glass calorimeter. (3 refs).

Calzas, A; Danon, G

1981-01-01T23:59:59.000Z

348

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network (OSTI)

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

349

Response of GaAs to fast intense laser pulses  

E-Print Network (OSTI)

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

350

Recombination in Low-Bandgap InGaAs  

SciTech Connect

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

351

High-quality InP on GaAs  

E-Print Network (OSTI)

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

352

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

353

Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP  

E-Print Network (OSTI)

This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

1997-01-01T23:59:59.000Z

354

Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices  

E-Print Network (OSTI)

of thermoelectric energy conversion devices depends on the thermoelectric figure of merit ZT of a material, which- troduced charge carriers in the ErAs:InGaAs regions of 0, 2 1018 , 4 1018 , and 8 1018 cm-3 , respectively. There- fore, the effective carrier concentrations in the four samples were 2 1018 , 4 1018 , 6 1018

355

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

356

ENG EC520: Digital Image Processing and Communications 2011-2012 Catalog Data  

E-Print Network (OSTI)

, "Fundamentals of Digital Image Processing", Prentice Hall A. Bovik Ed., "Handbook of Image and Video Processing analysis. Image compression fundamentals. Image compression standards (JPEG, JPEG-2000). Homework and boundary extraction, image segmentation Fundamentals of entropy coding (lossless compression) Fundamentals

357

CALL FOR APPLICATIONS FOR PROSPECTIVE PH.D. STUDENTS* Academic Year 2011/2012 -27th  

E-Print Network (OSTI)

THE RECTOR Having regard to Law n. 476 of August 13, 1984 and successive modifications; Having regard to Law Demography #12;2 Code: 11004 Dermatology, Anatomy, Plastic Surgery Code: 15612 European Environmental: 16174 Electromagnetics and Mathematical Models for Engineering Code: 16175 ENERGY ENVIRONMENT

Roma "La Sapienza", Università di

358

6 SDSU GRADUATE BULLETIN 2011-2012 Principal Officers of Administration  

E-Print Network (OSTI)

. . . . . . . . . . . . Geoffrey W. Chase Imperial Valley Campus . . . . . . . . . . . . . . . . . . . . . . David E. Pearson the Imperial Valley Campus; Dean of the Graduate Division or designee, who will chair the committee; Provost

Ponce, V. Miguel

359

SDSU GRADUATE BULLETIN 2011-2012 67 TELEPHONE: 760-768-5500  

E-Print Network (OSTI)

: Suzanna Fuentes, Helina Hoyt, Brett Kofford, Richard Martin General Information The Imperial Valley Campus. The Imperial Valley Campus faculty are multinational in their classroom orientation and background. Interactive the campus in San Diego. The Imperial Valley Campus schedules many of its classes in three-hour blocks so

Ponce, V. Miguel

360

SDSU General Catalog 2011-2012 81 TELEPHONE: 760-768-5500  

E-Print Network (OSTI)

: Suzanna Fuentes, Helina Hoyt, Brett Kofford, Richard Martin General Information The Imperial Valley Campus. The Imperial Valley Campus faculty are multinational in their classroom orientation and background. Interactive the campus in San Diego. The Imperial Valley Campus schedules many of its classes in three-hour blocks so

Ponce, V. Miguel

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
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361

480 SDSU General Catalog 2011-2012 Weber, Stephen L. (1996).....................................President; Professor of Philosophy  

E-Print Network (OSTI)

(1972) .............................Director, Outreach and Career Counseling, Imperial Valley Campus A, Imperial Valley Campus B.A., M.A., Obafemi Awolowo University, Nigeria; Ph.D., University of Ibadan, Imperial Valley Campus B.A., Universidad Nacional Autonoma de Mexico; M.A., Ph.D., El Colegio de Mexico

Ponce, V. Miguel

362

2011-2012BROWNBAGCOLLOQUIUMSERIES The Revolutionary and the Prophet: the Autobiographical Myths of Russian Camp  

E-Print Network (OSTI)

of Russian Camp Writer Varlam Shalamov TUESDAY, OCTOBER 25, 2011 12:30 PM - 1:30PM 2339 FACULTY/Russian prison camp literature. She has published articles and given papers on the life and works of Russian cataclysms of the 20 Century. This reevaluation must include an attempt to understand why some perished

Berdichevsky, Victor

363

2011-2012 Efficient Irrigation for Water Conservation in the Rio Grande Basin Progress and Accomplishments  

E-Print Network (OSTI)

related to water conserving technologies or mitigation strategies when land use changes from pasture to bioenergy cellulosic feedstock; 4) business finances involving costs and delivery rates of irrigation districts; and 5) water implications... of producing biofuels. The project has quantified important economic and investment aspects of water conservation, bioenergy production of feedstock desalination, biological control of Arundo policy insight, and rapport with the water leaders in the region...

Kalisek, D.

364

Faculty Page 437Sonoma State University 2011-2012 Catalog Emiliano C. Ayala (2000)  

E-Print Network (OSTI)

University M.A. 1967, Ph.D. 1969, University of California, Berkeley Chiara D. Bacigalupa (2007) Assistant Professor, Literacy, Elementary, and Early Education B.A. 1987, University of California, Santa Cruz M.A Angeles M.A. 2003, Ph.D. 2007, University of California, Irvine Jeffrey R. Baldwin (2009) Assistant

Ravikumar, B.

365

Student Service Professionals Page 463Sonoma State University 2011-2012 Catalog Michael Dominguez (2009)  

E-Print Network (OSTI)

(2009) Intramural, Sport Club, Kids Camp Coordinator B.S. 2002 Sonoma State University M.A. 2006 College M.A. 2005, Humboldt State University Donna Garbesi (2003) Elementary Education and Multiple Subject Credential Program Advisor/Recruiter B.A. 1982, San Francisco State University M.A. 2001, Sonoma

Ravikumar, B.

366

Degree Requirements Cohort AY2011/2012 updated as of 28 December 2012  

E-Print Network (OSTI)

Urban Water Engineering & Management ESE4406 Energy and the Environment ESE4407 Environmental Waste Management ESE5301 Environmental Biological Principles ESE5401 Water Quality Management ESE 4 ESE2401 Water Science & Technology 4 ESE3101 Solid and Hazardous Waste Management 4 ESE3201

Chaudhuri, Sanjay

367

RESEARCHCENTERS THE MEDICAL COLLEGE OF WISCONSIN MEDICAL SCHOOL ACADEMIC BULLETIN 2011-2012 43  

E-Print Network (OSTI)

with an emphasis on the application and transfer of technology: · Proteomics · Genomics · Computational Biology, technologies consisting of genetics, imaging, stem cell biology and regenerative medicine, proteomics's Study Center-- Waukesha County Vanguard Center International Center · Center for International Blood

368

NOTAS DOS TRABALHOS DE GEOMTICA 2011 -2012 Numero Nome Nota Trabalho  

E-Print Network (OSTI)

Brízida Barroso 3 19531 Filipa Matias Marques da Silva 4,75 18098 Francisco António Gomes Pestana 4 Gomes Barroso de Oliveira 4,5 18956 Emanuel Nobre de Sousa 4,0 19858 Erik Augusto da Cruz Sequeira 5

Lisboa, Universidade Técnica de

369

Kursplan fr lsret 2011/2012 (Genererad 2011-08-31.)  

E-Print Network (OSTI)

design ideas. Little Brown. 1985 Shimizu Yoshiharu. Models & Prototypes, Clay, Plaster, Styrofoam, Paper

370

IUT Bordeaux 1 2011 2012 Dpartement d'informatique OMGL2 ACSI Objet  

E-Print Network (OSTI)

Classes, Diagramme d'objets I Le site Gourmet/Gourmand Le site Gourmet/Gourmand (URL : http://www.gout

Johnen, Colette

371

Advanced Simulation and Computing Fiscal Year 2011-2012 Implementation Plan, Revision 0  

SciTech Connect

The Stockpile Stewardship Program (SSP) is a single, highly integrated technical program for maintaining the surety and reliability of the U.S. nuclear stockpile. The SSP uses past nuclear test data along with current and future non-nuclear test data, computational modeling and simulation, and experimental facilities to advance understanding of nuclear weapons. It includes stockpile surveillance, experimental research, development and engineering (D&E) programs, and an appropriately scaled production capability to support stockpile requirements. This integrated national program requires the continued use of current facilities and programs along with new experimental facilities and computational enhancements to support these programs. The Advanced Simulation and Computing Program (ASC) is a cornerstone of the SSP, providing simulation capabilities and computational resources to support the annual stockpile assessment and certification, to study advanced nuclear weapons design and manufacturing processes, to analyze accident scenarios and weapons aging, and to provide the tools to enable stockpile Life Extension Programs (LEPs) and the resolution of Significant Finding Investigations (SFIs). This requires a balanced resource, including technical staff, hardware, simulation software, and computer science solutions. In its first decade, the ASC strategy focused on demonstrating simulation capabilities of unprecedented scale in three spatial dimensions. In its second decade, ASC is focused on increasing its predictive capabilities in a three-dimensional (3D) simulation environment while maintaining support to the SSP. The program continues to improve its unique tools for solving progressively more difficult stockpile problems (focused on sufficient resolution, dimensionality and scientific details); to quantify critical margins and uncertainties (QMU); and to resolve increasingly difficult analyses needed for the SSP. Moreover, ASC has restructured its business model from one that was very successful in delivering an initial capability to one that is integrated and focused on requirements-driven products that address long-standing technical questions related to enhanced predictive capability in the simulation tools. ASC must continue to meet three objectives: Objective 1 - Robust Tools. Develop robust models, codes, and computational techniques to support stockpile needs such as refurbishments, SFIs, LEPs, annual assessments, and evolving future requirements. Objective 2 - Prediction through Simulation. Deliver validated physics and engineering tools to enable simulations of nuclear weapons performance in a variety of operational environments and physical regimes and to enable risk-informed decisions about the performance, safety, and reliability of the stockpile. Objective 3 - Balanced Operational Infrastructure. Implement a balanced computing platform acquisition strategy and operational infrastructure to meet Directed Stockpile Work (DSW) and SSP needs for capacity and high-end simulation capabilities.

McCoy, M; Phillips, J; Hpson, J; Meisner, R

2010-04-22T23:59:59.000Z

372

UNIVERSITY HEALTH SERVICES UC BERKELEY 2011/2012 OFFICE APPEAL OF WAIVER DENIAL  

E-Print Network (OSTI)

INSURANCE PLAN (SHIP) APPEAL OF WAIVER DENIAL INSTRUCTIONS: Please read this material below before filing term. 4. Evaluation of your appeal will be based on comparability guidelines in effect at the time Berkeley, CA 94720-4300 FAX: (510) 642-9119 Email: ship@uhs.berkeley.edu Dear Insurance Coordinator: I

Doudna, Jennifer A.

373

New Drugs and Devices from 2011 2012 That Might Change Your Practice  

E-Print Network (OSTI)

cardiovascular death, and heart attack in patients withfewer will have a heart attack, and 9 fewer will experienceor older Previous heart attack or Coronary Artery Bypass

Lex, Joe

2013-01-01T23:59:59.000Z

374

Prof. Dr. Hans-Peter Scheffler Wintersemester 2011/2012 Dr. Alexander Hoffmann  

E-Print Network (OSTI)

Ritter de M´er´e Recht hatte. Aufgabe 2: Es seien I = , G = Mengen und A, B, C, Mi, Ni Pot(G) f¨ur i I. Zeigen Sie: (a) A B = A \\ (A \\ B) (b) (A B) Ac = B Ac (c) (A B)c = Ac Bc (d) A \\ iI Mi = iI (A \\ Mi) (e) A \\ iI Mi = iI (A \\ Mi) (f) iI (Mi Ni) iI Mi iI Ni (g) iI (Mi Ni) iI Mi iI Ni (h) Zeigen

Scheffler, Hans-Peter

375

Bulletin 2011-2012 UNdERGRAdUATE AdMISSIoNS  

E-Print Network (OSTI)

challenges in health-- in mind and body; sustainability--in energy, climate, or water; information, and digitial worlds integrate and fuse, and where the innovative solutions will be found to solve current grand

Hone, James

376

University Degrees Page 29Sonoma State University 2011-2012 Catalog Liberal Studies (Ukiah)  

E-Print Network (OSTI)

and the Environment o Energy Management and Design o Environmental Conservation and Restoration o Outdoor Leadership o.S.) · Biochemistry · Biology, with concentrations in: o Ecology, Evolution and Conservation o Marine Biology o Science · Electrical Engineering · Environmental Studies, with a concentration in: o Energy Management

Ravikumar, B.

377

Funded MURI Proposals for AY 2011-2012 Title: High Value Lipids for a Biorenewable Economy  

E-Print Network (OSTI)

and Bioinformatics and Department of Radiology, Indiana University School of Medicine (seeking scholars from Biology and Purdue University School of Science (seeking scholars from Biology, Chemistry, Pre-Dental, Pre

Zhou, Yaoqi

378

Courses: Business Administration (BUS) Page 263Sonoma State University 2011-2012 Catalog Business Administration (BUS)  

E-Print Network (OSTI)

in the areas of consumer protection, antitrust, labor and employment law. buS 230A finAnCiAl ACCOuntinG (4, housing and other consumer decisions, legal protection, insurance, investments, retire- ments, retirement. The course emphasizes the sources, functions and processes of law. It surveys a number of areas, including

Ravikumar, B.

379

Page 1 de 6 2010-2011 2011-2012 2012-2013 2013-2014  

E-Print Network (OSTI)

mettant à profit les TIC P P P P Doyenne et VDF Comités facultaires Spécialistes TIC Professionnel TIC facultaire de soutien au développement de la formation à distance et de l'utilisation des TIC dans l

Spino, Claude

380

154 SDSU General Catalog 2011-2012 In the College of Sciences  

E-Print Network (OSTI)

, Dowler, Ebert, Etheridge, Fisher, Ford, Franklin, Futch, Hanscom, Hemmingsen, Huffman, Hunsaker, Hurlbert

Gallo, Linda C.

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

U.S. DOE Webinar Series - 2011-2012 Hydrogen Student Design Contest...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

2011 Home About the Fuel Cell Technologies Office Hydrogen Production Hydrogen Delivery Hydrogen Storage Fuel Cells Technology Validation Manufacturing Safety, Codes, and...

382

UNC Charlotte Priority Legislative Requests for 2011/2012 MINIMIZE BUDGETARY REDUCTIONS TO THE EXTENT POSSIBLE  

E-Print Network (OSTI)

of utilities, daily custodial and maintenance care, information technology support commitment to higher education, preserve NC's global reputation for outstanding higher education, and help NC remain economically competitive. UNC Charlotte's applicant pools

Xie,Jiang (Linda)

383

Office of the Registrar 2011-2012 Academic Year DEGREE DIVISION MEN WOMEN TOTAL  

E-Print Network (OSTI)

in Computer Engineering WSE 0 0 0 Bachelor of Science in Compuer Science WSE 0 0 0 Bachelor of Science

Weaver, Harold A. "Hal"

384

Office of the Registrar 2011-2012 Academic Year DEGREE DIVISION MEN WOMEN TOTAL  

E-Print Network (OSTI)

Engineering WSE 2 0 2 Bachelor of Science in Compuer Science WSE 4 0 4 Bachelor of Science in Electrical

Weaver, Harold A. "Hal"

385

Office of the Registrar 2011-2012 Academic Year DEGREE DIVISION MEN WOMEN TOTAL  

E-Print Network (OSTI)

in Compuer Science WSE 19 2 21 Bachelor of Science in Electrical Engineering WSE 7 3 10 Bachelor of Science

Weaver, Harold A. "Hal"

386

Annual Review of Low-Carbon Development in China (2011-2012)...  

Open Energy Info (EERE)

Five-Year Plan (FYP) period where China set a target of reducing its energy intensity (energy consumption per unit of GDP) by 20% compared to the 2005 baseline, and it achieved...

387

INSTITUT NEEL Grenoble Proposition d'un sujet de thse -Anne universitaire 2011-2012  

E-Print Network (OSTI)

'information sur : http://neel.cnrs.fr/ Fluides et solides quantiques aux Ultra Basses Températures Le groupe «Ultra-basses Températures» (UBT) a pour mission la recherche en physique fondamentale à la frontière des : réfrigérateur à dilution (Tmin mK) équipé d'un étage à désaimantation nucléaire de type Lancaster et d

Canet, Léonie

388

Common Data Set 2011-2012 CDS-A Page 1  

E-Print Network (OSTI)

on your institution's Web site? Yes No X A0 If yes, please provide the URL of the corresponding Web page

Mohaghegh, Shahab

389

Persons Honored by the Jewish and General Community, 20112012  

Science Journals Connector (OSTI)

Fred Wilpon, 74, majority owner of the New York Mets....Wilpon was embroiled in the Bernard Madoff Ponzi scheme, when it was alleged that Wilpon and his partner/brother-in-law knowingly d...

Arnold Dashefsky; Ira Sheskin

2013-01-01T23:59:59.000Z

390

New Drugs and Devices from 2011 2012 That Might Change Your Practice  

E-Print Network (OSTI)

or older Previous heart attack or Coronary Artery Bypasscardiovascular death, and heart attack in patients withfewer will have a heart attack, and 9 fewer will experience

Lex, Joe

2013-01-01T23:59:59.000Z

391

Kursplan fr lsret 2011/2012 (Genererad 2011-08-31.)  

E-Print Network (OSTI)

urbanaq områden; kunna bedöma bebyggelsestrukturens inverkan på vind, solstrålning ochq maximal användning av förnyelsebar energi; #12;kunna formulera kriterier för klimatanpassad och hållbar ett kritiskt, självständigt, kreativt och innovativt förhållningssätt till frågor omq klimat, energi

392

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a  

E-Print Network (OSTI)

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C Richard R. King,2 and Harry A. Atwater1 1 California Institute of Technology, Pasadena, California 91125, USA 2 Spectrolab, Inc., Sylmar, California 91342, USA 3 Aonex Technologies, Pasadena, California 91106

Atwater, Harry

393

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS  

E-Print Network (OSTI)

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In

Atwater, Harry

394

The evolution of Ga and As core levels in the formation of Fe/GaAs (001):A high resolution soft x-ray photoelectron spectroscopic study  

SciTech Connect

A high resolution soft x-ray photoelectron spectroscopic study of Ga and As 3d core levels has been conducted for Fe/GaAs (001) as a function of Fe thickness. This work has provided unambiguous evidence of substrate disrupting chemical reactions induced by the Fe overlayer--a quantitative analysis of the acquired spectra indicates significantly differing behavior of Ga and As during Fe growth, and our observations have been compared with existing theoretical models. Our results demonstrate that the outdiffusing Ga and As remain largely confined to the interface region, forming a thin intermixed layer. Whereas at low coverages Fe has little influence on the underlying GaAs substrate, the onset of substrate disruption when the Fe thickness reaches 3.5 Angstrom results in major changes in the energy distribution curves (EDCs) of both As and Ga 3d cores. Our quantitative analysis suggests the presence of two additional As environments of metallic character: one bound to the interfacial region and another which, as confirmed by in situ oxidation experiments, surface segregates and persists over a wide range of overlayer thickness. Analysis of the corresponding Ga 3d EDCs found not two, but three additional environments--also metallic in nature. Two of the three are interface resident whereas the third undergoes outdiffusion at low Fe coverages. Based on the variations of the integrated intensities of each component, we present a schematic of the proposed chemical makeup of the Fe/GaAs (001) system.

Thompson, Jamie; Neal, James; Shen, Tiehan; Morton, Simon; Tobin, James; Waddill, George Dan; Matthew, Jim; Greig, Denis; Hopkinson, Mark

2008-07-14T23:59:59.000Z

395

Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers  

Science Journals Connector (OSTI)

We investigate spectra of InGaN/GaN quantum well (QW) light-emitting diode (LED) structures with heavily doped barriers at different excitation levels. We model the spectral shape and energy position in frames of dominating mechanism of free electron ... Keywords: Band filling, Doped barriers, Emission spectra, Quantum well

B. Arnaudov; D. S. Domanevskii; S. Evtimova; Ch. Ivanov; R. Kakanakov

2009-02-01T23:59:59.000Z

396

Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes  

Science Journals Connector (OSTI)

We report on the important role played by internal quantum well (QW) fields in the anomalous inversion of capacitance transients in InGaN/GaN multi-QW light-emitting diodes (LEDs). This effect was observed by deep-level transient spectroscopy (DLTS) ... Keywords: Deep level, III-Nitride, Internal fields, Quantum well

L. Rigutti; A. Castaldini; A. Cavallini

2009-02-01T23:59:59.000Z

397

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Journals Connector (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung; Keun Man Song; Young Su Choi; Hyeong-Ho Park; Hyun-Beom Shin; Ho Kwan Kang; Jaejin Lee

2013-01-01T23:59:59.000Z

398

Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields  

Science Journals Connector (OSTI)

A theoretical study of the direct and indirect exciton states in GaAs/Ga1-xAlxAs coupled double quantum wells under crossed electric and magnetic fields is presented. The setup of the system under consideration consists of an ... Keywords: 71.55.Eq, 73.20.Mf, 73.21.Fg, Diamagnetic shifts, Double quantum-wells, Magnetoexcitons

L. E. Oliveira; M. de Dios-Leyva; C. A. Duque

2008-03-01T23:59:59.000Z

399

Exciton diamagnetic shift in GaAs/Ga1-xAlxAs quantum wells under in-plane magnetic fields  

Science Journals Connector (OSTI)

Using a variational procedure in the effective-mass and parabolic-band approximations we investigate the effects of in-plane magnetic fields on the exciton states in single GaAs/Ga1-xAlxAs quantum wells. Exciton properties ... Keywords: 71.55.Eq, 73.20.Mf, 73.21.Fg, Diamagnetic shifts, Magnetoexcitons, Quantum wells

C. A. Duque; M. de Dios-Leyva; L. E. Oliveira

2008-03-01T23:59:59.000Z

400

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum  

Science Journals Connector (OSTI)

The fission neutron spectrum averaged cross-sections for the reactions70Ge(n,p)70Ga and74Ge(n,p)74Ga have been determined. The averages of four determinations are, respectively, (3.100.30) mb and (0.009380.0005...

I. M. Cohen; A. J. Kestelman; J. C. Furnari

1996-03-14T23:59:59.000Z

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Price of Freeport, TX Natural Gas LNG Imports from Egypt (Nominal...  

Annual Energy Outlook 2012 (EIA)

Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- 4.24 2010's -- 12.23 -- --...

402

An internship with San Tomas hunting camp Freeport-McMoRan, Inc.  

E-Print Network (OSTI)

Guests . Personal Research Project . . . . . . Quail Nanagament Halfmutting Hutch building . . . . . . . . . . . ~ Prescribed burning Discing . ~ . Food habits Banding . Deer Nsnsgement . . . . . . . ~ . . ~ Censusing Fall burning Fawn... & N University . . . . . . . . . . . San Tomas Hunting Camp . . . . . . . . . . . 22 23 LITERATURE CITED APPENDIX A ? Resear ch Pro ject APPENDIX B ? Progress Report - Freeze tailed Deer Branding of White- 25 26 52 LIST OF FIGURES, TABLES...

Huggins, J. Grant

2012-06-07T23:59:59.000Z

403

Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate  

SciTech Connect

Simultaneous growth of ?111?{sub B} free-standing and [110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111){sub B} interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111){sub B} interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111){sub B} interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

Sun, Wen; Xu, Hongyi [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia)] [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Guo, Yanan [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)] [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Zou, Jin, E-mail: j.zou@uq.edu.au [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia QLD 4072 (Australia)

2013-11-25T23:59:59.000Z

404

Dynamic Model of Hydrogen in GaN  

NLE Websites -- All DOE Office Websites (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

405

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy  

SciTech Connect

Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Yu, K. M.; Walukiewicz, W. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)] [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kudrawiec, R. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland); Luce, A. V. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Ting, M. [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)] [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2013-03-18T23:59:59.000Z

406

Ga configurations in hydrogenated amorphous silicon as studied by x-ray photoemission spectroscopy  

Science Journals Connector (OSTI)

Samples of crystalline silicon and glow-discharge-deposited hydrogenated amorphous silicon were doped with gallium by low-energy (4-keV) ion implantation. X-ray photoemission spectroscopy was used to study the chemical-bonding states of the Ga. From Ga 3d core-level studies, we found that elementary interstitial, threefold-coordinated, and fourfold-coordinated Ga coexist in the ion-implanted and annealed amorphous silicon network. The percentage of activated threefold- and fourfold-coordinated Ga atoms is found to increase with increasing annealing temperature, prior to crystallization. The energy released by the amorphous silicon lattice upon annealing contributes to the activation of the gallium from the elementary state to the threefold- or fourfold-coordinated state. No evidence of Ga-H bond formation is found. The percentage of fourfold-coordinated Ga, which we call the doping efficiency, ranges from 5% to 10%, depending upon the thermal treatment.

Z. H. Lu; S. Poulin-Dandurand; E. Sacher; A. Yelon

1990-09-15T23:59:59.000Z

407

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network (OSTI)

Mason Carroll, B. S. , Rose-Hulman Institute of Technology Chair of Advisory Committee: Dr. Kai Chang Microstrip transmission lines are widely used in microv, ave circuits. The high frequencies cause the microstrip characteristics, especially... OF CONTENTS . . LIST OF FIGURES LIST OF TABLES. . CHAPTER I INTRODUCTION . . I. A Introduction. I. B Thesis Research Il GaAs MICROSTRlp ATTENUATION . II. A Characterization ol'Transmission Line Attenuation. . . . II. A. I Introduction. II. A. 2...

Carroll, James Mason

2012-06-07T23:59:59.000Z

408

InGaAsSb thermophotovoltaic diode physics evaluation  

SciTech Connect

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

1998-06-01T23:59:59.000Z

409

(22) reconstructions of the {111} polar surfaces of GaAs  

Science Journals Connector (OSTI)

Ab initio total-energy calculations were used to examine (22) reconstruction models for the (111) and (111) surfaces of GaAs. For the (111) surface the lowest-energy Ga-vacancy geometry is determined; several mechanisms for Ga-vacancy formation are examined and other reconstructions are discussed. For the (111) surface it is shown that the As-vacancy model is unlikely and other geometries are considered.

E. Kaxiras; Y. Bar-Yam; J. D. Joannopoulos; K. C. Pandey

1986-03-15T23:59:59.000Z

410

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions  

Science Journals Connector (OSTI)

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions ... 9-19 In most cases, an alkaline earth metal is introduced into a Na melt to enhance the solubility of nitrogen, and is incorporated in the nitride product. ... The container was sealed by welding its open end in an argon atmosphere with active water-cooling so that NaN3 did not decompose due to heating during the welding. ...

Dong Gon Park; Zoltn A. Gl; Francis J. DiSalvo

2003-02-13T23:59:59.000Z

411

Ga[sub 13], Al[sub 13], GaAl[sub 12], and chromium-pillared montmorillonites: Acidity and reactivity for cumene conversion  

SciTech Connect

A comparison has been made of the acidic characters of a series of metal polyoxocation pillar interlayered clay minerals (M-PILCs) by studying the infrared spectra of adsorbed pyridine. These comparisons were made for Ga[sub 13]-, Al[sub 13]- and GaAl[sub 12]-PILCs, and for Na[sup +]-exchanged montmorillonite (Na-STx-1). The Ga[sub 13]-PILC, was found to exhibit the strongest Lewis acid sites, followed by the AL[sub 13]-, and GaAl[sub 12]-PILCs and then by the Ns-STx-1. The relative number of Lewis acid sites, however, was found to be much greater for the GaAl[sub 12]-PILC, particularly after calcination at higher temperatures, indicating that the Ga[sub 13] Lewis acid sites did not have as high a thermal stability. The Broensted acidic characters for the pillared clays depend on the pillar, and follow the general decreasing order of abundance of GaAl[sub 12]-, Al[sub 13], and Ga[sub 13]-PILC when expressed as absorbance per unit mass. When the acidities per unit surface area were estimated, however, the Ga[sub 13]-PILCs were found to have the greatest number. This indicated that while the pillars contribute to the PILC acidities primarily through increasing the exposed phyllosilicate sheet surface areas, there is also a significant effect arising from the acidic characters of the pillars themselves. The dehydrogenation activities of Ga[sub 13]-, GaAl[sub 12]-, Al[sub 13]-, and Na-STx-1, in addition to a chromium polyoxocation-PILC, were compared by observing the products formed upon reaction with the model compound cumene. The Ga[sub 13]- and chromium-PILCs and the Na-Stx-1 exhibited almost exclusively dehydrogenation activities, whereas the Al[sub 13]- and GaAl[sub 12]-PILCs exhibited both cracking and dehydrogenation behaviors. These results prove that the pillars themselves can very strongly effect the catalytic activities of the PILCs. 3 refs., 6 figs., 2 tabs.

Bradley, S.M.; Kydd, R.A. (Univ. of Calgary, Alberta (Canada))

1993-05-01T23:59:59.000Z

412

Carrier-induced change in refractive index of InP, GaAs, and InGaAsP  

SciTech Connect

The authors have theoretically estimated the change in refractive index {Delta}{ital n} produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 10{sup 16}/cm{sup 3} to 10{sup 19}/cm{sup 3} and photon energies of 0.8 to 2.0 eV were considered. Predictions of {Delta}{ital n} are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10{sup {minus} 2} are predicted for carrier concentrations of 10{sup 18}/cm{sup 3}, suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials.

Bennett, B.R. (Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (US)); Soref, R.A. (Solid State Sciences Directorate, Rome Air Development Center, Hanscom Air Force Base, Bedford, MA (US)); Del Alamo, J.A. (Dept. of Electrical Engineering and Computer Science, Massachussets Institute of Technology, Cambridge, MA (US))

1990-01-01T23:59:59.000Z

413

Photoluminescence kinetics of indirect excitons in GaAs/AlxGa1-xAs coupled quantum wells  

Science Journals Connector (OSTI)

Photoluminescence (PL) kinetics of long-lifetime indirect excitons in a GaAs/AlxGa1-xAs coupled quantum well characterized by a small in-plane random potential was studied at temperatures 1.5<~T<~15 K for a wide range of exciton densities. Strong deviations of the indirect exciton PL kinetics from monoexponential PL rise/decay were observed at low temperatures and high exciton densities. In particular, right after the excitation is switched off, the spectrally integrated indirect exciton PL intensity increased sharply. Simultaneously, the indirect exciton energy distribution was observed to narrow significantly. The observed increase in intensity is attributed to the sharp increase of occupation of the optically active exciton states. The energy distribution narrowing is explained in terms of the phonon mediated exciton energy relaxation in momentum space and in the in-plane random potential.

L. V. Butov, A. Imamoglu, A. V. Mintsev, K. L. Campman, and A. C. Gossard

1999-01-15T23:59:59.000Z

414

Sensitivity of absorption spectra to surface segregation in InGaN/GaN quantum well structures  

SciTech Connect

We investigate the influence of the indium surface segregation on absorption spectra in InGaN/GaN quantum well structures having different indium amount. Results of the mathematical modeling show that such influence is more pronounced in quantum well structures with high indium amounts. The origin of this effect is related to the interplay between the indium surface segregation and internal electrostatic fields. Our theoretical analysis is performed using semiconductor Bloch equations within the Hartree-Fock approximation including into consideration excitonic effects. Results of the global sensitivity analysis evidence that the influence of the indium surface segregation is less than one order of magnitude in comparison with the impact of the quantum-well width and indium molar fraction. Also, the influence of the indium surface segregation is not the same for each interface of the quantum well.

Klymenko, M. V.; Shulika, O. V. [Lab. Photonics, Kharkov National University of Radio Electronics, Kharkov, 61166 (Ukraine); Sukhoivanov, I. A. [Department of Electronics, Engineering Division, University of Guanajuato, Salamanca, Guanajuato, 36885 (Mexico)

2014-05-15T23:59:59.000Z

415

Band offsets from two special GaAs-AlxGa1-xAs quantum-well structures  

Science Journals Connector (OSTI)

Half-parabolic quantum wells and two-stepped quantum wells have been grown by molecular-beam epitaxy with the GaAs-AlxGa1-xAs system and investigated by photoluminescence techniques to determine the band offsets at the heterointerfaces. Both structures provide interband transitions that are sensitive to the partitioning of the energy-gap discontinuity ?Eg=?Ec+?Ev between the conduction and valence bands. It is concluded that the data require valence-band offsets ?Ev equal to 38% and 41% of ?Eg for the half-parabolic wells and the two-stepped wells, respectively. These band offsets are therefore in agreement with the trend of other recent determinations.

R. C. Miller; A. C. Gossard; D. A. Kleinman

1985-10-15T23:59:59.000Z

416

ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures  

SciTech Connect

Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65-150 mJ/cm{sup 2} allowed to generate an array of 1.2x1 mm{sup 2} sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.

Genest, Jonathan; Beal, Romain; Aimez, Vincent; Dubowski, Jan J. [Department of Electrical and Computer Engineering, Center of Excellence for Information Engineering, Universite de Sherbrooke, Sherbrooke, Quebec J1K 2R1 (Canada)

2008-08-18T23:59:59.000Z

417

E-Print Network 3.0 - algorithm ga technique Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

for: algorithm ga technique Page: << < 1 2 3 4 5 > >> 1 GAMMA: Global Arrays Meets MATLAB Rajkiran Panuganti Summary: is a straightforward implementa- tion of a standard...

418

Band-structure analysis from photoreflectance spectroscopy in (Ga,Mn)As  

SciTech Connect

Modulation photoreflectance spectroscopy has been applied to study the band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn content. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy in the (Ga,Mn)As layers with increasing Mn content are interpreted in terms of a disordered valence band, extended within the band gap, formed, in highly Mn-doped (Ga,Mn)As, as a result of merging the Mn-related impurity band with the host GaAs valence band.

Yastrubchak, Oksana; Gluba, Lukasz; Zuk, Jerzy [Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin (Poland); Wosinski, Tadeusz; Andrearczyk, Tomasz; Domagala, Jaroslaw Z. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Sadowski, Janusz [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland and MAX-Lab, Lund University, 22100 Lund (Sweden)

2013-12-04T23:59:59.000Z

419

Assessment of the Passivation Capabilities of Two Different Covalent Chemical Modifications on GaP(100)  

Science Journals Connector (OSTI)

With respect to toxicity, the UDA-functionalized GaP provided better passivation which was confirmed by less gallium leaching into water and saline solutions. ... Due to its promising characteristics for device fabrication, gallium arsenide (GaAs) has been extensively studied and the formation of self-assembled monolayers has been of interest. ... A general increase in the Ga/P ratio can be seen in the surfaces exposed to solutions compared to the clean surface which is attributed to the greater solubility of the phosphorus oxide (P2O5) compared to the gallium oxide (Ga2O3). ...

David Richards; Dmitry Zemlyanov; Albena Ivanisevic

2010-02-03T23:59:59.000Z

420

Interface Reactions and Electrical Characteristics of Au/GaSb Contacts  

SciTech Connect

The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

H. Ehsani; R.J. Gutmann; G.W. Charache

2000-07-07T23:59:59.000Z

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Si in GaN -- On the nature of the background donor  

SciTech Connect

A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25 GPa the authors study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. The authors find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples.

Wetzel, C.; Chen, A.L.; Suski, T.; Ager, J.W. III; Walukiewicz, W. [Lawrence Berkeley National Lab., CA (United States). Materials Science Div.

1996-08-01T23:59:59.000Z

422

Structural defects in GaN revealed by Transmission Electron Microscopy  

SciTech Connect

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Liliental-Weber, Zuzanna

2014-04-18T23:59:59.000Z

423

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics  

Science Journals Connector (OSTI)

An n++-GaAs/p++-AlGaAs tunnel junction with a peak current density of 10?100Acm?2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10?000suns is below 5mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500Acm?2 and a voltage drop at 10?000suns of around 20mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

I Garca; I Rey-Stolle; C Algora

2012-01-01T23:59:59.000Z

424

Growth of 5 mm GaN Single Crystals at 750 C from an Na?Ga Melt  

Science Journals Connector (OSTI)

Laser diodes using GaN-based III?V nitrides have been developed, and nitride semiconductor devices are now of considerable interest. ... When the inclusions were exposed to air, they reacted with water vapor in air and produced sodium hydroxide and small gallium metal droplets at the fracture surface of the crystal. ... The solubility of nitrogen in liquid sodium is extremely low (7.1 10-9 mol % N at 600 C). ...

Masato Aoki; Hisanori Yamane; Masahiko Shimada; Seiji Sarayama; Francis J. DiSalvo

2001-02-03T23:59:59.000Z

425

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

426

Local indium segregation and band structure in high efficiencygreen light emitting InGaN/GaN diodes  

SciTech Connect

GaN/InGaN light emitting diodes (LEDs) are commercialized for lighting applications because of the cost efficient way that they produce light of high brightness. Nevertheless, there is significant room for improving their external emission efficiency from typical values below 10 percent to more than 50 percent, which are obtainable by use of other materials systems that, however, do not cover the visible spectrum. In particular, green-light emitting diodes fall short in this respect, which is troublesome since the human eye is most sensitive in this spectral range. In this letter advanced electron microscopy is used to characterize indium segregation in InGaN quantum wells of high-brightness, green LEDs (with external quantum efficiency as high as 15 percent at 75 A/cm2). Our investigations reveal the presence of 1-3 nm wide indium rich clusters in these devices with indium concentrations as large as 0.30-0.40 that narrow the band gap locally to energies as small as 2.65 eV.

Jinschek, Joerg R.; Erni, Rolf; Gardner, Nathan F.; Kim, AndrewY.; Kisielowski, Christian

2004-11-23T23:59:59.000Z

427

Deep Levels in p-Type InGaAsN Lattice Matched to GaAs  

SciTech Connect

Deep level transient spectroscopy (DLTS) measurements were utilized to investigate deep level defects in metal-organic chemical deposition (MOCVD)-grown unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the bandgap, with a dominant hole trap at E{sub v} + 0.10 eV. Post-growth annealing simplified the deep level spectra, enabling the identification of three distinct hole traps at 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge, with concentrations of 3.5 x 10{sup 14} cm{sup {minus}3}, 3.8 x 10{sup 14} cm{sup {minus}3}, and 8.2 x 10{sup 14} cm{sup {minus}3}, respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4 x 10{sup 14} cm{sup {minus}3} in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future.

Allerman, A.A.; Jones, E.D.; Kaplar, R.J.; Kurtz, S.R.; Kwon, D.; Ringel, S.A.

1999-03-02T23:59:59.000Z

428

Avalanche buildup time of an InP/InGaAsP/InGaAs APD at high gain  

SciTech Connect

Under a high-gain operating condition, the presence of a multiplication process in the InGaAs(P) regions of an InP/InGaAsP/InGaAs avalanche photodiode having a structure of separated absorption and multiplication regions (SAM-APD) could lead to significant enhancement of the avalanche buildup time. As a result, the bandwidth of the device could be reduced considerably. The dependence of the avalanche multiplication factor and the intrinsic response time on the reverse bias voltage, the heterointerface field, the doping concentrations, and the width of the InP layer are examined in detail for the case in which hole injection is assumed. It is shown, for example, that for a fixed value of doping concentrations, the reduction of the excess noise factor and the enhancement of the gain-bandwidth product of the device can be made at the same time by a proper increase of the width of the InP layer.

Hsieh, H.C.; Sargeant, W. (Iowa State Univ. of Science and Technology, Ames, IA (USA). Dept. of Electrical Engineering)

1989-09-01T23:59:59.000Z

429

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

430

Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate  

E-Print Network (OSTI)

-Queisser limit6 for the solar-cell efficiency. Recently, NWs of various semi- conductors such as GaAs/AlGaAs,7

Southern California, University of

431

IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 4, APRIL 2006 397 Design and Performance of an InGaAsInP  

E-Print Network (OSTI)

, focusing on the effect of the critical InGaAsP grading layer between the narrow-gap InGaAs absorption layer

Buller, Gerald S.

432

Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions  

SciTech Connect

This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

Piprek, Joachim, E-mail: piprek@nusod.org [NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

2014-02-03T23:59:59.000Z

433

Enhancing the Light Extraction of InGaN Light-Emitting Diodes by Patterning the Dicing Streets  

Science Journals Connector (OSTI)

Patterning the dicing streets technology was used to define the high extraction efficiency region of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The external quantum...

Lin, Hung Cheng; Tseng, Yen Chun; Chyi, Jen Inn; Lee, Chia Ming

434

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P  

E-Print Network (OSTI)

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P An Chen1,a-bandgap semiconductor AlxGa1-xP is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on Al0.5Ga0.5P epitaxial layer grown lattice matched on GaP substrate by molecular

Woodall, Jerry M.

435

IEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array  

E-Print Network (OSTI)

2.3-m laser. Al Ga As Sb cladding layers. Details of the lasers' heterostructure design can be foundIEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array L. Shterengas, G--High-power 2.3- m In(Al)GaAsSb­GaSb type-I double quantum-well diode laser arrays were fabricated

436

Analyzing the Performance of a Multiobjective GA-P Algorithm for Learning Fuzzy Queries in  

E-Print Network (OSTI)

Analyzing the Performance of a Multiobjective GA-P Algorithm for Learning Fuzzy Queries in a Machine Learning Environment Oscar Cord´on1 , Enrique Herrera-Viedma1 , Mar´ia Luque1 , F´elix de Moya2- tionary algorithms (EAs) [1], such as genetic algorithm-programming (GA-P) [11] or simulated annealing

Fernandez, Thomas

437

Modeling of InAs/GaAs Quantum Dot Solar Cells  

Science Journals Connector (OSTI)

This paper reports electrical characteristics of an intermediate band p-i-n GaAs solar cell with InAs quantum dots embedded in the intrinsic region using Synopsis TCAD simulation tools. Up to five layers of quantum dots have been taken into consideration ... Keywords: Quantum dots, Intermediate band, InAs, GaAs, Solar Cells, TCAD

Ayman Rizk; Kazi Islam; Ammar Nayfeh

2013-11-01T23:59:59.000Z

438

2=picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications  

E-Print Network (OSTI)

2=picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications K. D. Li GaAs Schottky photodiode is monolithically integrated with a microwave detector. By using this new optoelectronic circuit.in place of a nonlinear crystal in an optical correlation setup, the high-speed photodiode

Ozbay, Ekmel

439

Ultralow noise midwave infrared InAsGaSb strain layer superlattice avalanche photodiode  

E-Print Network (OSTI)

Ultralow noise midwave infrared InAs­GaSb strain layer superlattice avalanche photodiode InAs­GaSb strain layer superlattice p+ -n- -n homojunction avalanche photodiodes APDs grown by solid characteristics. © 2007 American Institute of Physics. DOI: 10.1063/1.2817608 Photodiodes operating in the eye

Krishna, Sanjay

440

14 MHz rate photon counting with room temperature InGaAs/InP avalanche photodiodes  

E-Print Network (OSTI)

14 MHz rate photon counting with room temperature InGaAs/InP avalanche photodiodes PAUL L. VOSS based on InGaAs/InP avalanche photodiodes for use at 1.55 mm wavelength. Operation at room temperature at the above wavelengths for conventional high light-level measurements with PIN or ava- lanche photodiodes

Köprülü, Kahraman Güçlü

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network (OSTI)

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

442

Resonant Raman scattering in an InAs/GaAs monolayer structure  

E-Print Network (OSTI)

), embedded in bulklike GaAs with two Al- GaAs cladding layers forming a waveguide. The InAs- mono- layer system used. Raman spectra were excited with a Ti-Sapphire laser, tuned from 1.41 eV to 1.435 e

Nabben, Reinhard

443

Electro-optic imagery of high-voltage GaAs photoconductive switches  

SciTech Connect

The authors present electro-optic images of GaAs high-voltage photoconductive switches utilizing the electro-optic effect of the semi-insulating GaAs substrate. Experimental methodology for obtaining the images is described along with a self-calibrating data reduction algorithm. Use of the technique for observing fabrication defects is shown.

Falk, R.A.; Adams, J.C.; Capps, C.D.; Ferrier, S.G.; Krinsky, J.A. (Boeing Defense and Space Group, Seattle, WA (United States))

1995-01-01T23:59:59.000Z

444

Variation of lattice constant and cluster formation in GaAsBi  

SciTech Connect

We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs at substrate temperatures between 220315 C. Irrespective of the growth temperature, the structures exhibited similar Bi compositions, and good overall crystal quality as deduced from X-Ray diffraction measurements. After thermal annealing at temperatures as low as 500 C, the GaAsBi layers grown at the lowest temperatures exhibited a significant reduction of the lattice constant. The lattice variation was significantly larger for Bi-containing samples than for Bi-free low-temperature GaAs samples grown as a reference. Rutherford backscattering spectrometry gave no evidence of Bi diffusing out of the layer during annealing. However, dark-field and Z-contrast transmission electron microscopy analyses revealed the formation of GaAsBi clusters with a Bi content higher than in the surrounding matrix, as well as the presence of metallic As clusters. The apparent reduction of the lattice constant can be explained by a two-fold process: the diffusion of the excess As incorporated within As{sub Ga} antisites to As clusters, and the reduction of the Bi content in the GaAs matrix due to diffusion of Bi to GaAsBi clusters. Diffusion of both As and Bi are believed to be assisted by the native point defects, which are present in the low-temperature as-grown material.

Puustinen, J.; Schramm, A.; Guina, M. [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland)] [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland); Wu, M.; Luna, E. [Paul-Drude Institut fr Festkrperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)] [Paul-Drude Institut fr Festkrperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Laukkanen, P. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)] [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Laitinen, M.; Sajavaara, T. [Department of Physics, University of Jyvskyl, P.O. Box 35, FI-40014 Jyvskyl (Finland)] [Department of Physics, University of Jyvskyl, P.O. Box 35, FI-40014 Jyvskyl (Finland)

2013-12-28T23:59:59.000Z

445

ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission  

E-Print Network (OSTI)

ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission angle Emily D Kosten1 solar cell under direct sunlight, light is received from the solar disk, but is re-emitted isotropically.1038/lsa.2013.1; published online 4 January 2013 Keywords: detailed balance; GaAs solar cell; light

Atwater, Harry

446

Plasmonic nanoparticle enhanced light absorption in GaAs solar cells Keisuke Nakayama,a  

E-Print Network (OSTI)

Plasmonic nanoparticle enhanced light absorption in GaAs solar cells Keisuke Nakayama,a Katsuaki 22 September 2008 We demonstrate an improvement in efficiency of optically thin GaAs solar cells-ratio nanoparticles effectively increases the optical path of the incident light in the absorber layers resulting

Atwater, Harry

447

Calculated spin polarization of field-assisted GaAs electron source  

Science Journals Connector (OSTI)

Calculations are reported showing that for the field-assisted GaAs NEA photocathode, the spin polarization of emitted electrons can be 3.6 times higher than for non-field GaAs sources. The reason for this is that...

B. Yang; V. Guidi; L. Tecchio

1993-02-01T23:59:59.000Z

448

Coupling of nitrogen-vacancy centers in diamond to a GaP waveguide  

E-Print Network (OSTI)

The optical coupling of guided modes in a GaP waveguide to nitrogen-vacancy (NV) centers in diamond is demonstrated. The electric field penetration into diamond and the loss of the guided mode are measured. The results indicate that the GaP-diamond system could be useful for realizing coupled microcavity-NV devices for quantum information processing in diamond.

K. -M. C. Fu; C. Santori; P. E. Barclay; I. Aharonovich; S. Prawer; N. Meyer; A. M. Holm; R. G. Beausoleil

2008-11-03T23:59:59.000Z

449

Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs  

SciTech Connect

A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.

Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Hobson, W.S.; Jung, K.B.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

1998-11-23T23:59:59.000Z

450

Strain modified/enhanced ferromagnetism in Mn{sub 3}Ge{sub 2} thin films on GaAs(001) and GaSb(001)  

SciTech Connect

Ferromagnetic Mn{sub 3}Ge{sub 2} thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. The results of our work revealed that the substrate facilitates to modify magnetic and electrical properties of Mn{sub 3}Ge{sub 2} films due to tensile/compressive strain effect between films and substrates. The characteristic spin-flopping transition at around 150 K for the bulk Mn{sub 3}Ge{sub 2} disappeared completely for both samples. The antiferromagnetism below 150 K changed to ferromagnetism and retained above room temperature. The saturation magnetization was found to be 0.23 and 1.32 {mu}{sub B}/Mn atom at 10 K for the samples grown on GaSb(001) and GaAs(001), respectively.

Dang Duc Dung; Duong Van Thiet [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi (Viet Nam); Feng Wuwei; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Park, In-Sung [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Bo Lee, Sung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)

2013-04-21T23:59:59.000Z

451

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network (OSTI)

der Laan,8 C. T. Foxon,2 and B. L. Gallagher2 1Institute of Physics ASCR, Cukrovarnick? 10, 162 53 Praha 6, Czech Republic 2School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom 3Institute of Physics ASCR, Na... is organized as follows. In Sec. II we identify the key physical considerations related to ground-state mag- netization of #1;Ga,Mn#2;As ferromagnets by focusing first on a single Mn#1;d5+hole#2; complex and approximating the total magnetization...

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

452

Theory of weak localization in ferromagnetic (Ga,Mn)As  

E-Print Network (OSTI)

&M University, College Station, Texas 77843-4242, USA 3Institute of Physics, ASCR, v.v.i., Cukrovarnicka 10, 162 53 Praha 6, Czech Republic 4School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom #1;Received 27 November.... Unlike earlier theoretical work15,16 which ad- dressed quantum interference in ferromagnets, we focus our study on a four-band model which is directly relevant to the valence bands of #1;Ga,Mn#2;As. We demonstrate that the quan- tum interference...

Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

2009-01-01T23:59:59.000Z

453

Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors  

E-Print Network (OSTI)

- Magnetization relaxation in ?Ga,M Jairo Sinova,1 T. Jungwirth,2,3 X. Liu,4 Y. Sasaki,4 J. K 1Department of Physics, Texas A&M Universit 2Institute of Physics ASCR, Cukrovarnick 3Department of Physics, University of Texa 4Department of Physics, University... is currently the focus of a considerable experimental16 and theoretical17 research. Spin-transfer switching has not yet been demonstrated in all-semiconductor systems, but the effect promises to have a richer phenomenology in this case because...

Sinova, Jairo; Jungwirth, T.; Liu, X.; Sasaki, Y.; Furdyna, JK; Atkinson, WA; MacDonald, AH.

2004-01-01T23:59:59.000Z

454

Quantum effects in electron beam pumped GaAs  

SciTech Connect

Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

Yahia, M. E. [Faculty of Engineering, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt) [Faculty of Engineering, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt); National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt); Azzouz, I. M. [National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt)] [National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt); Moslem, W. M. [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)] [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)

2013-08-19T23:59:59.000Z

455

Exciton front propagation in photoexcited GaAs quantum wells  

Science Journals Connector (OSTI)

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton rings in exciton emission patterns. The interfaces preserve their integrity during expansion, remaining as sharp as in the steady state, which indicates that the dynamics is controlled by carrier transport. The front propagation velocity is measured and compared to theoretical model. The measurements of expanding and collapsing exciton rings afford a contactless method for probing the electron and hole transport.

Sen Yang, L. V. Butov, L. S. Levitov, B. D. Simons, and A. C. Gossard

2010-03-16T23:59:59.000Z

456

IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 6, JUNE 2009 593 GaAs MESFET With a High-Mobility  

E-Print Network (OSTI)

systems, including InGaAs [4], CdS [5], ZnO [6], and GaN [7]. To the best of our knowledge FET (MESFET) fabricated with an intentionally doped n-type planar GaAs NW channel grown on a semi

Li, Xiuling

457

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect  

E-Print Network (OSTI)

fields on optical prop- erties in the cases of GaInAs/GaAs QWs2 and CdS/CdSe superlattices4 on GaAs 111 MOVPE . The total un- doped region sandwiched by n and p layers is 51 nm. The carrier concentrations

Wetzel, Christian M.

458

Enhanced Performance of Small GaAs Solar Cells via Edge and Surface Passivation with Trioctylphosphine Sulfide  

E-Print Network (OSTI)

Enhanced Performance of Small GaAs Solar Cells via Edge and Surface PassivationAs solar cells. Photoluminescence (PL) measurements indicate monolayers of TOP:S on GaAs significantly" GaAs solar cell (0.31 mm2 ) to test its ability to passivate devices with the relevant dimensions

Atwater, Harry

459

Intrinsic vacancy induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001) Taisuke Ohta,1,  

E-Print Network (OSTI)

Intrinsic vacancy induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001) Taisuke Ohta,1-blende structure of -Ga2Se3, which contains ordered 110 arrays of Ga vacancies. These ordered vacancy lines structural vacancies of semiconducting chalcogenides lead to numerous interesting structural, electronic

Olmstead, Marjorie

460

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE  

NLE Websites -- All DOE Office Websites (Extended Search)

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE Identification of the Parasitic Chemical Reactions during AlGaN OMVPE by J. R. Creighton, M. E. Coltrin, and W. G. Breiland Motivation-GaN and AlGaN alloys are ex- tremely important materials with widespread applications for optoelectronics (e.g. solid state lighting) and high power electronics. Or- ganometallic vapor phase epitaxy (OMVPE) is the primary deposition methodology, but it suf- fers from several growth chemistry anomalies. Growth rate and alloy composition are often a sensitive function of temperature and other reac- tor variables. These factors make the AlGaN OMVPE process difficult to control and in- crease the cost of the material. Conventional wisdom has been that the non-ideal OMVPE behavior is due to parasitic "pre-reactions" be-

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping  

SciTech Connect

We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 deg. C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.

Ahn, Kwang-Soon; Yan, Yanfa; Shet, Sudhakar; Deutsch, Todd; Turner, John; Al-Jassim, Mowafak [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2007-12-03T23:59:59.000Z

462

Infrared spectroscopy of amorphous hydrogenated GaAs: Evidence for H bridges  

Science Journals Connector (OSTI)

The infrared absorption spectra of hydrogenated amorphous GaAs show two prominent hydrogen-related bands at 530 and 1460 cm-1. These bands are very broad and they amount to most of the hydrogen-induced infrared absorption. The remaining structures are a number of comparatively sharp lines which we interpret as Ga-H and As-H modes in partial agreement with earlier investigations. We argue that the broad bands arise from near-stretching (1460 cm-1) and from wagging (530 cm-1) vibrations of H atoms situated in bridging positions between two Ga atoms. This assignment is supported by similar bands in Al-H polymers, a-GaP: H, and a-GaSb: H. A model calculation of the mode frequencies is also presented.

Z. P. Wang; L. Ley; M. Cardona

1982-09-15T23:59:59.000Z

463

In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time  

E-Print Network (OSTI)

; accepted 14 June 2005; published 18 July 2005 Gallium nitride and its alloys promise to be key materials.1116/1.1993616 I. INTRODUCTION In recent years, gallium-nitride GaN - and aluminum- gallium-nitride AlGaN -based are grown at high temperatures e.g., up to 1100 °C using large concentrations of H2 carrier and NH3 N source

Rubloff, Gary W.

464

Dynamic nuclear polarization and Hanle effect in (In,Ga)As/GaAs quantum dots. Role of nuclear spin fluctuations  

SciTech Connect

The degree of circular polarization of photoluminescence of (In,Ga)As quantum dots as a function of magnetic field applied perpendicular to the optical axis (Hanle effect) is experimentally studied. The measurements have been performed at various regimes of the optical excitation modulation. The analysis of experimental data has been performed in the framework of a vector model of regular nuclear spin polarization and its fluctuations. The analysis allowed us to evaluate the magnitude of nuclear polarization and its dynamics at the experimental conditions used.

Gerlovin, I. Ya. [Spin Optics Laboratory, Saint Petersburg State University, Petrodvorets, 198504 St. Petersburg (Russian Federation); Cherbunin, R. V.; Ignatiev, I. V.; Kuznetsova, M. S.; Verbin, S. Yu. [Spin Optics Laboratory, Saint Petersburg State University, Petrodvorets, 198504 St. Petersburg, Russia and Experimentelle Physik 2, Technische Universitt Dortmund, D-44221 Dortmund (Germany); Flisinski, K.; Bayer, M. [Experimentelle Physik 2, Technische Universitt Dortmund, D-44221 Dortmund (Germany); Reuter, D.; Wieck, A. D. [Angewandte Festkrperphysik, Ruhr-Universitt Bochum, D-44780 Bochum (Germany); Yakovlev, D. R. [Experimentelle Physik 2, Technische Universitt Dortmund, D-44221 Dortmund, Germany and A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

2013-12-04T23:59:59.000Z

465

Optical resonance modes in GaN pyramid microcavities  

SciTech Connect

An array of GaN hexagonal pyramids with a side length of 8.0 {mu}m was fabricated by selective epitaxial overgrowth. These microsized pyramids are highly efficient microcavities. Three types of optical resonance modes with mode spacings of 10, 5.0, and 6.0 {Angstrom} were observed when a single pyramid was pumped optically by an intense ultraviolet laser beam. An optical ray tracing method has been developed for calculating the optical resonance modes inside the pyramid microcavities. It was shown that a single pyramidal cavity can support several different types of optical resonance modes. The calculated mode spacing agrees very well with the observations. The uniqueness and advantages of this class of hexagonal pyramidal microcavities over the other microcavities are discussed. The implications of our finding on the future GaN microcavity light emitters including micro-light-emitting diodes, microcavity lasers, and vertical-cavity-surface emitting lasers are also discussed. {copyright} {ital 1999 American Institute of Physics.}

Jiang, H.X.; Lin, J.Y.; Zeng, K.C. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Yang, W. [Honeywell Technology Center, Plymouth, Minnesota 55441 (United States)] [Honeywell Technology Center, Plymouth, Minnesota 55441 (United States)

1999-08-01T23:59:59.000Z

466

U.S. Total Exports  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

467

U.S. LNG Imports from Indonesia  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

468

U.S. LNG Imports from Brunei  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

469

U.S. LNG Imports from Egypt  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

470

U.S. LNG Imports from Canada  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

471

U.S. LNG Imports from Trinidad/Tobago  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

472

U.S. LNG Imports from Peru  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

473

U.S. LNG Imports from Malaysia  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

474

U.S. LNG Imports from Oman  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

475

U.S. LNG Imports from Australia  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

476

U.S. LNG Imports from Nigeria  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

477

U.S. LNG Imports from Yemen  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

478

U.S. LNG Imports from United Arab Emirates  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

479

U.S. LNG Imports from Algeria  

Gasoline and Diesel Fuel Update (EIA)

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

480

U.S. Natural Gas Imports by Pipeline from Mexico  

U.S. Energy Information Administration (EIA) Indexed Site

International Falls, MN Noyes, MN Warroad, MN Babb, MT Havre, MT Port of Del Bonita, MT Port of Morgan, MT Sweetgrass, MT Whitlash, MT Portal, ND Sherwood, ND Pittsburg, NH Champlain, NY Grand Island, NY Massena, NY Niagara Falls, NY Waddington, NY Sumas, WA Highgate Springs, VT North Troy, VT LNG Imports into Cameron, LA LNG Imports into Cove Point, MD LNG Imports into Elba Island, GA LNG Imports into Everett, MA LNG Imports into Freeport, TX LNG Imports into Golden Pass, TX LNG Imports into Gulf Gateway, LA LNG Imports into Gulf LNG, MS LNG Imports into Lake Charles, LA LNG Imports into Neptune Deepwater Port LNG Imports into Northeast Gateway LNG Imports into Sabine Pass, LA U.S. Pipeline Total from Mexico Ogilby, CA Otay Mesa, CA Alamo, TX El Paso, TX Galvan Ranch, TX Hidalgo, TX McAllen, TX Penitas, TX LNG Imports from Algeria Cove Point, MD Everett, MA Lake Charles, LA LNG Imports from Australia Everett, MA Lake Charles, LA LNG Imports from Brunei Lake Charles, LA LNG Imports from Canada Highgate Springs, VT LNG Imports from Egypt Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf LNG, MS Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Equatorial Guinea Elba Island, GA Lake Charles, LA LNG Imports from Indonesia Lake Charles, LA LNG Imports from Malaysia Gulf Gateway, LA Lake Charles, LA LNG Imports from Nigeria Cove Point, MD Elba Island, GA Freeport, TX Gulf Gateway, LA Lake Charles, LA Sabine Pass, LA LNG Imports from Norway Cove Point, MD Sabine Pass, LA LNG Imports from Oman Lake Charles, LA LNG Imports from Peru Cameron, LA Freeport, TX Sabine Pass, LA LNG Imports from Qatar Cameron, LA Elba Island, GA Golden Pass, TX Gulf Gateway, LA Lake Charles, LA Northeast Gateway Sabine Pass, LA LNG Imports from Trinidad/Tobago Cameron, LA Cove Point, MD Elba Island, GA Everett, MA Freeport, TX Gulf Gateway, LA Gulf LNG, MS Lake Charles, LA Neptune Deepwater Port Northeast Gateway Sabine Pass, LA LNG Imports from United Arab Emirates Lake Charles, LA LNG Imports from Yemen Everett, MA Freeport, TX Neptune Deepwater Port Sabine Pass, LA LNG Imports from Other Countries Lake Charles, LA Period: Monthly Annual

Note: This page contains sample records for the topic "ga 2011-2012 freeport" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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481

Journal of Crystal Growth 293 (2006) 273277 A study of semi-insulating GaN grown on AlN buffer/sapphire  

E-Print Network (OSTI)

-temperature GaN interlayer. In comparison with the normal GaN grown on sapphire, the crystal quality measurement results of GaN grown directly on an AlN buffer indicated that the as-grown-undoped Ga, or high density of edge-type dislocations [6­10]. However, Fe and other heavy metals tend to have reactor

Ozbay, Ekmel

482

Effects of crossed electric and magnetic fields on the electronic and excitonic states in bulk GaAs and GaAs?Ga1?xAlxAs quantum wells  

Science Journals Connector (OSTI)

The variational procedure in the effective-mass and parabolic-band approximations is used in order to investigate the effects of crossed electric and in-plane magnetic fields on the electronic and exciton properties in semiconductor heterostructures. Calculations are performed for bulk GaAs and GaAs?Ga1?xAlxAs quantum wells, for applied magnetic fields parallel to the layers and electric fields in the growth direction, and it is shown that the combined effects on the heterostructure properties of the applied crossed electric and magnetic fields and the direct coupling between the center-of-mass and internal exciton motions may be dealt with via a simple parameter representing the spatial distance between the centers of the electron and hole magnetic parabolas. Exciton properties are analyzed by using a simple hydrogenlike envelope excitonic wave function and present theoretical results are found in fair agreement with available experimental measurements on the diamagnetic shift of the photoluminescence peak position of GaAs?Ga1?xAlxAs quantum wells under in-plane magnetic fields.

M. de Dios-Leyva, C. A. Duque, and L. E. Oliveira

2007-01-02T23:59:59.000Z

483

Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization  

DOE Patents (OSTI)

Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

Tuttle, John R. (Denver, CO); Contreras, Miguel A. (Golden, CO); Noufi, Rommel (Golden, CO); Albin, David S. (Denver, CO)

1994-01-01T23:59:59.000Z

484

Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization  

DOE Patents (OSTI)

Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

1994-10-18T23:59:59.000Z

485

Many-body effects on optical gain in GaAsPN/GaPN quantum well lasers for silicon integration  

SciTech Connect

Many-body effects on the optical gain in GaAsPN/GaP QW structures were investigated by using the multiband effective-mass theory and the non-Markovian gain model with many-body effects. The free-carrier model shows that the optical gain peak slightly increases with increasing N composition. In addition, the QW structure with a larger As composition shows a larger optical gain than that with a smaller As composition. On the other hand, in the case of the many-body model, the optical gain peak decreases with increasing N composition. Also, the QW structure with a smaller As composition is observed to have a larger optical gain than that with a larger As composition. This can be explained by the fact that the QW structure with a smaller As or N composition shows a larger Coulomb enhancement effect than that with a larger As or N composition. This means that it is important to consider the many-body effect in obtaining guidelines for device design issues.

Park, Seoung-Hwan, E-mail: shpark@cu.ac.kr [Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongbuk 712-702 (Korea, Republic of)

2014-02-14T23:59:59.000Z

486

26. 1% solar cell efficiency for Ge mechanically stacked under GaAs  

SciTech Connect

We have processed a diffused Ge wafer into a Ge concentrator solar cell and mechanically stacked it under a GaAs cell fabricated by Varian. We measured this stack's efficiency to be 26.1% for terrestrial air mass 1.5 direct (AM1.5D) conditions at a 285 x concentration ratio. We showed that this efficiency is limited by optical absorption in the Varian GaAs cell caused by high 2--4 (10/sup 18/) cm/sup -3/ substrate doping. We used a 2 x 10/sup 17/ cm/sup -3/ doped GaAs filter to estimate the stack efficiency as 27.4%, which would be achieved with the same Varian GaAs cell formed on a lower doped substrate. We project efficiencies assuming the best properties reported for a GaAs device. This gives a 29.6% efficiency for an improved, planar Ge cell and 31.6% efficiency for a proposed point contact geometry for the Ge cell. The corresponding space (AM0) efficiencies at a 159 x concentration ratio range from the 23.4% value we measured on the stack up to 28.4% projected for the point contact Ge place under the best GaAs cell. We showed that Ge cells give higher efficiencies than Si when stacked under GaAs.

Partain, L.D.; Kuryla, M.S.; Weiss, R.E.; Ransom, R.A.; McLeod, P.S.; Fraas, L.M.; Cape, J.A.

1987-10-01T23:59:59.000Z

487

Lattice dynamics of GaN: Effects of 3d electrons  

Science Journals Connector (OSTI)

We perform first-principles calculations of structural, dielectric, and lattice-dynamical properties of cubic GaN. The equilibrium structure is obtained using the plane-wave pseudopotential approach within the density-functional theory and local-density approximation. The dielectric and vibrational properties are computed within the density-functional perturbation theory. The effect of the Ga 3d electrons is treated by taking into account the nonlinear core corrections for the exchange and correlation energy. The importance of 3d electrons for the bonding strength is determined, and their influence on the dielectric and dynamical properties of GaN is analyzed and discussed.

K. Karch; F. Bechstedt; T. Pletl

1997-08-15T23:59:59.000Z

488

Atomic geometry of the 22 GaP(111) surface  

Science Journals Connector (OSTI)

Integral and fractional order beam low-energy electron-diffraction intensity-voltage (I-V) data have been taken on a bombardment-annealed GaP(111)-(22) surface. We have compared these data with calculated I-V curves using a dynamical multiple scattering theory and found very good agreement for the following model: One out of every four Ga surface atoms is missing and the surface Ga-P bilayer is almost coplanar. Surface and deeper layer atoms undergo vertical and lateral displacements from bulk positions. Similar results in other systems suggest that the vacancy model applies on the (111) face of many compound semiconductors.

G. Xu; W. Y. Hu; M. W. Puga; S. Y. Tong; J. L. Yeh; S. R. Wang; B. W. Lee

1985-12-15T23:59:59.000Z

489

Integration of inverted InGaAs MSM array on Si substrate through low temperature  

E-Print Network (OSTI)

to reduce thermal stress at the interface. Huang et al. [2] presented a thin-film InGaAs MSM PD bonded to Si layers including those on InGaAs MSMs and Si/SiO2 is 860 nm. eching window InP epi-layer SiO2 Si Ti Au Au HCl:H3PO4 (1:1) to open a photodetection window. Citric acid was used to remove the InGaAs etching

Huang, Zhaoran "Rena"

490

Growth and optical characterization of multilayers of InGaN quantum dots  

E-Print Network (OSTI)

GaN quantum dots Article Type: Research Paper Section/Category: General subjects Keywords: B2. InGaN quantum dots; A1. Photoluminescence; B1. Nitrides; A3. Metal-organic vapour phase epitaxy Corresponding Author: Dr Tongtong Zhu, Ph... , Cambridge, CB2 3QZ, UK Dr Tongtong Zhu Tel: +44 1223 334368 Fax: +44 1223 334437 E-mail: tz234@cam.ac.uk 9 Sep 2011 Dear Editor, Title: Growth and optical characterization of multilayers of InGaN quantum dots Authors: Tongtong Zhu, Haitham A...

Zhu, Tontong; El-Ella, Haitham; Reid, Benjamin; Holmes, Mark; Taylor, Robert; Kappers, Menno; Oliver, Rachel

2012-01-01T23:59:59.000Z

491

Low threshold for optical damage in AlGaN epilayers and heterostructures  

SciTech Connect

Laser pulses with duration much shorter than the effective carrier lifetime cause permanent photoluminescence (PL) quenching and enhancement of PL decay rate in bare-faceted and capped AlGaN epilayers and multiple quantum wells at pulse energies about an order of magnitude lower than those causing the surface to melt and degrade. In contrast, GaN epilayers exhibit no photomodification in the same excitation intensity range. PL spectra and decay kinetics show that lattice heating is not responsible for the observed changes in AlGaN, which result from the formation of nonradiative recombination centers via recombination-enhanced defect reactions occurring at high nonequilibrium carrier densities.

Saxena, Tanuj [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Tamulaitis, Gintautas [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 9-III, Vilnius, LT-10222 (Lithuania); Shatalov, Max; Yang, Jinwei; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209 (United States); Shur, Michael S. [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Department of PAPA, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2013-11-28T23:59:59.000Z

492

Ferromagnetism of GaMnAs studied by polarized neutron reflectometry  

Science Journals Connector (OSTI)

Polarized neutron reflectometry has been used to investigate details of spin ordering in ferromagnetic (FM) GaMnAs/GaAs superlattices. The reflectivity spectra measured below the Curie temperature reveal additional magnetic contributions to the structural superlattice Bragg peaks, clearly indicating the existence of FM interlayer correlations. Closer investigation of the magnetic reflectivity maxima using a full polarization analysis provides direct evidence that the FM order in the GaMnAs layers is truly long range. Moreover, as shown by the data, the system exhibits a strong tendency of forming a single-domain FM arrangement, even when cooled through TC in zero external field.

H. K?pa; J. Kutner-Pielaszek; A. Twardowski; C. F. Majkrzak; J. Sadowski; T. Story; T. M. Giebultowicz

2001-09-05T23:59:59.000Z

493

Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells  

SciTech Connect

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation leads to a bulk resistance over 1 M?, independent of applied magnetic fields. In addition, ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.

Charpentier, Christophe; Flt, Stefan; Reichl, Christian; Nichele, Fabrizio; Nath Pal, Atindra; Pietsch, Patrick; Ihn, Thomas; Ensslin, Klaus; Wegscheider, Werner [Laboratory for Solid State Physics, ETH Zrich, 8093 Zrich (Switzerland)] [Laboratory for Solid State Physics, ETH Zrich, 8093 Zrich (Switzerland)

2013-09-09T23:59:59.000Z

494

Formation energy of excess arsenic atoms in n-type GaAs  

Science Journals Connector (OSTI)

We report the first determination of the formation energy of excess-As-atomrelated defects in Te-doped GaAs. The photocapacitance method in the constant-capacitance condition is applied to GaAs:Te prepared by 67-h annealing at 8501100 C under various As vapor pressures followed by rapid cooling. From an Arrhenius plot of the saturating deep-level density at quasi thermal equilibrium under high As vapor pressure, the formation energy of the defect is determined to be 1.16 eV in Te-doped horizontal-Bridgeman-grown GaAs crystals.

Jun-ichi Nishizawa; Yutaka Oyama; Kazushi Dezaki

1990-11-12T23:59:59.000Z

495

Development of a Multifilament PIT V3Ga Conductor for Fusion Applications  

SciTech Connect

Previous studies on V{sub 3}Ga assert its suitability for use in proposed fusion reactors. V{sub 3}Ga may outperform Nb{sub 3}Sn in a fusion reactor environment based on its relatively flat critical-current profile in the 15 T-20 T range, resilience to applied strain, and reduced risk of induced radioactivity. A multifilament powder-in-tube V{sub 3}Ga conductor was designed, fabricated and tested with a focus on evaluating critical current versus applied field and applied strain performance, wire drawing difficulties, heat-treatment optimization, and overall feasibility of the concept.

Distin, J.S.; Ghosh, A.; Motowidlo, L.R.; Lee, P.J.; Larbalestier, D.C.; Lu, X.F.; Cheggour, N.; Stauffer, T.C.; Goodrich, L.F.

2011-08-03T23:59:59.000Z

496

Intersubband transitions in In{sub x}Ga{sub 1?x}N/In{sub y}Ga{sub 1?y}N/GaN staggered quantum wells  

SciTech Connect

Intersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the doping level in the well. Schrdinger and Poisson equations are solved self-consistently by taking the free and bound surface charge concentrations into account. Many-body effects, namely, depolarization and excitonic shifts are also included in the calculations. Results for transition energies, oscillator strength, and the absorption lineshape up to nonlinear regime are represented as functions of the parameters mentioned. The well width (total and constituent layers separately) and In concentration dependence of the built-in electric field are exploited to tune the intersubband transition energies.

Y?ld?r?m, Hasan, E-mail: hasanyildirim@karabuk.edu.tr [Department of Occupational Health and Safety, School of Health, Karabuk University, Karabuk 78050 (Turkey); Aslan, Bulent, E-mail: bulentaslan@anadolu.edu.tr [Department of Physics, Faculty of Science, Anadolu University Yunus Emre Campus, Eskisehir 26470 (Turkey)

2014-04-28T23:59:59.000Z

497

Electronic parameters and interfacial properties of GaAs/AlxGa1-xAs multiquantum wells grown on (111)A GaAs by metalorganic vapor phase epitaxy  

Science Journals Connector (OSTI)

We report a comprehensive study of the optical and interfacial properties of GaAs/AlxGa1-xAs multiquantum wells grown on (111)A GaAs substrates by metalorganic vapor phase epitaxy which allowed the determination of the electronic parameters appropriate for such quantum wells. High-resolution x-ray diffractometry studies indicate an excellent crystal quality and good periodicity for the multiquantum wells and provided their structural parameters accurately. The photoreflectance spectra exhibit all the allowed and almost all the weakly allowed optical transitions between the confined hole and electron states. From an analysis of the photoreflectance spectra it is shown that the quantum well interfaces have an abruptness better than 1 ML. Photoluminescence spectroscopy was also performed to evaluate independently the roughness of the interfaces and multiquantum well period reproducibility. For a 25-period multiquantum well structure with a well width of 55 , a photoluminescence linewidth of 12.5 meV, which corresponds to a combined well-width fluctuation and interface roughness of less than 1 monolayer over the 25 periods, proves the achievement of heterointerfaces with excellent interfacial quality. From a detailed analysis of the high-order transitions observed in the photoreflectance spectra we determined key quantum well electronic parameters, such as, the heavy-hole valence-band offset Qv=0.330.02, the transverse GaAs heavy-hole effective mass mhh=(0.950.02)m0, and the light-hole effective mass mlh=0.08m0 in ?111? directions, for ?111?-oriented GaAs/AlxGa1-xAs quantum well structures.

Soohaeng Cho; A. Sanz-Hervs; A. Majerfeld; B. W. Kim

2003-07-10T23:59:59.000Z

498

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint  

SciTech Connect

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-05-01T23:59:59.000Z

499

Carrier cooling and exciton formation in GaSe  

Science Journals Connector (OSTI)

The initial cooling of hot carriers and the subsequent exciton formation in GaSe are studied by time-resolved photoluminescence (PL) using femtosecond up-conversion techniques. From the time-resolved PL spectra of this layered III-VI semiconductor two different energy relaxation channels are derived. After an initial subpicosecond cooling due to Frhlich-type interaction of carriers with longitudinal optical E?(22) phonons a slower regime follows, which is dominated by deformation potential interaction with the nonpolar optical A1?(12) phonons. The coupling constant for nonpolar optical phonon scattering is derived. The subsequent formation of excitons is studied at different carrier densities and detection energies. A cross section for the free-exciton formation is determined based on a rate equation model.

S. Nsse; P. Haring Bolivar; H. Kurz; V. Klimov; F. Levy

1997-08-15T23:59:59.000Z

500

Dimensionality of InGaAs nonlinear optical response  

SciTech Connect

In this thesis the ultrafast optical properties of a series of InGaAs samples ranging from the two to the three dimensional limit are discussed. An optical system producing 150 fs continuum centered at 1.5 microns was built. Using this system, ultrafast pump-probe and four wave mixing experiments were performed. Carrier thermalization measurements reveal that screening of the Coulomb interaction is relatively unaffected by confinement, while Pauli blocking nonlinearities at the band edge are approximately twice as strong in two dimensions as in three. Carrier cooling via phonon emission is influenced by confinement due both to the change in electron distribution function and the reduction in electron phonon coupling. Purely coherent band edge effects, as measured by the AC Stark effect and four wave mixing, are found to be dominated by the changes in excitonic structure which take place with confinement.

Bolton, S.R. [Univ. of California, Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1995-07-01T23:59:59.000Z