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  1. FRV SI Transport Solar LP | Open Energy Information

    Open Energy Info (EERE)

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  2. Ferromagnetism and Nonmetallic Transport of Thin-Film ? - FeSi 2 : A Stabilized Metastable Material

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cao, Guixin; Singh, D.?J.; Zhang, X.-G.; Samolyuk, German; Qiao, Liang; Parish, Chad; Jin, Ke; Zhang, Yanwen; Guo, Hangwen; Tang, Siwei; et al

    2015-04-07

    A metastable phase ?-FeSi? was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on ?-FeSi? (111) thin films, while the bulk material of ?-FeSi? is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of ?-FeSi? obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding shedsmore »light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.« less

  3. Ferromagnetism and Nonmetallic Transport of Thin-Film ? - FeSi 2 : A Stabilized Metastable Material

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cao, Guixin; Singh, D.?J.; Zhang, X.-G.; Samolyuk, German; Qiao, Liang; Parish, Chad; Jin, Ke; Zhang, Yanwen; Guo, Hangwen; Tang, Siwei; Wang, Wenbin; Yi, Jieyu; Cantoni, Claudia; Siemons, Wolter; Payzant, E. Andrew; Biegalski, Michael; Ward, T.?Z.; Mandrus, David; Stocks, G.?M.; Gai, Zheng

    2015-04-01

    A metastable phase ?-FeSi? was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on ?-FeSi? (111) thin films, while the bulk material of ?-FeSi? is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of ?-FeSi? obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding sheds light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.

  4. Investigation of structure, magnetic, and transport properties of Mn-doped SiC films

    SciTech Connect (OSTI)

    Sun Xianke [School of Material Science and Engineering, Tianjin University, Tianjin 300172 (China); Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384 (China); Guo Ruisong [School of Material Science and Engineering, Tianjin University, Tianjin 300172 (China); An Yukai [Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384 (China); School of Material Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Liu Jiwen [School of Material Science and Engineering, Tianjin University, Tianjin 300172 (China); Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384 (China); School of Material Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2013-07-15

    Mn-doped SiC films were fabricated by radio frequency magnetron sputtering technique. The structure, composition, and magnetic and transport properties of the films were investigated. The results show the films have the 3C-SiC crystal structure and the doped Mn atoms in the form of Mn{sup 2+} ions substitute for C sites in SiC lattice. All the films are ferromagnetic at 300 K, and the ferromagnetism in films arises from the doped Mn atoms and some extended defects. In addition, the saturation magnetization increases with the Mn-doped concentration increasing. The Mn doping does not change the semiconductor characteristics of the SiC films.

  5. Si Nanopores Development for External Control of Transport of Biomolecules

    SciTech Connect (OSTI)

    Ileri, N; Tringe, J; Letant, S; Palozoglu, A; Stroeve, P; Faller, R

    2008-06-13

    Nazar Ileri has been involved in an independent, multidisciplinary effort to create a new class of molecular sieves for proteins and viruses. Her experimental work has been performed concurrently at two campuses, LLNL and UC Davis, while theoretical components have been largely accomplished at UC Davis. As will be described, the devices she is creating have great potential to improve very significantly the efficiency and selectivity of molecular transport over what is presently available from state-of-the-art membranes. Our biotechnology training program is based on an integrated study of the transport of biomolecules through conically-shaped, nanoporous silicon membranes. The overall objective of this effort is to demonstrate an efficient, highly selective membrane technology that is manufacturable for macroscopic areas and can be employed in sensing, diagnostic and biomedical applications. Our specific aims are to (1) fabricate and characterize the physical characteristics of the membranes, (2) to demonstrate their utility for molecular transport and separation, and (3) to develop models that will facilitate understanding of these devices as well as improved performance of the next generation of devices. We have proposed that the conical pores have superior performance characteristics compared to other porous filters. To study this hypothesis, complementary approaches from different disciplines, such as membrane synthesis, experiment, and molecular simulation need to be combined. This provides an ideal training environment for a future leader in biotechnology. Hence, for this study, Nazar Ileri has started to carry out a full range of experimental and theoretical investigations under our guidance. First, she has begun fabrication of filters with conical/pyramidal pores. She characterized the pores by AFM and SEM, and analyzed the images using wavelets and other mathematical tools. She has also started to conduct biomolecule transport experiments to compare the efficiency of fabricated filters vs. state-of-the-art commercial polycarbonate track-etched (PCTE) membranes. Finally, she has performed preliminary molecular calculations to investigate the operating principles of such systems and she has obtained results which she will present at the international 'Nanostructured materials, membrane modeling and simulation' workshop in Greece.

  6. Effect of growth temperature on ballistic electron transport through the Au/Si(001) interface

    SciTech Connect (OSTI)

    Eckes, M. W.; Friend, B. E.; Stollenwerk, A. J.

    2014-04-28

    Ballistic electron emission spectroscopy was used to investigate electron transport through Au/Si(001) Schottky diodes grown at 35?°C and 22?°C. Aside from a decreased Schottky height, this small increase in temperature introduced an energy dependent scattering component, which was absent in the samples grown at 22?°C. These differences may be attributed to the increased amount of Au-Si intermixing at the interface. Despite the non-epitaxial nature of the growth technique, strong evidence was found in both sets of samples that indicated the presence of a forward-focused current subject to some degree of parallel momentum conservation at the interface. This evidence was present in all samples grown at 35?°C, but was only observed in those samples grown at 22?°C when the Au films were 10?nm or thicker. This sensitivity to growth temperature could account for discrepancies in previous studies on Au/Si(001)

  7. The spin-dependent transport of Co-encapsulated Si nanotubes contacted with Cu electrodes

    SciTech Connect (OSTI)

    Guo, Yan-Dong; Yan, Xiao-Hong; Xiao, Yang

    2014-02-10

    Unlike carbon nanotubes, silicon ones are hard to form. However, they could be stabilized by metal-encapsulation. Using first-principles calculations, we investigate the spin-dependent electronic transport of Co-encapsulated Si nanotubes, which are contacted with Cu electrodes. For the finite tubes, as the tube-length increases, the transmission changes from spin-unpolarized to spin-polarized. Further analysis shows that, not only the screening of electrodes on Co's magnetism but also the spin-asymmetric Co-Co interactions are the physical mechanisms. As Cu and Si are the fundamental elements in semiconductor industry, our results may throw light on the development of silicon-based spintronic devices.

  8. Anomalous diameter dependence of thermal transport in ultra-narrow Si nanowires

    SciTech Connect (OSTI)

    Karamitaheri, Hossein, E-mail: karami@iue.tuwien.ac.at [Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, A-1040 Wien (Austria); Department of Electrical Engineering, University of Kashan, Kashan, 87317-51167 (Iran, Islamic Republic of); Neophytou, Neophytos, E-mail: neophytou@iue.tuwien.ac.at [Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, A-1040 Wien (Austria); School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Kosina, Hans, E-mail: kosina@iue.tuwien.ac.at [Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, A-1040 Wien (Austria)

    2014-01-14

    We present atomistic valence force field calculations of thermal transport in Si nanowires of diameters from 12?nm down to 1?nm. We show that as the diameter is reduced, the phonon density-of-states and transmission function acquire a finite value at low frequency, in contrast to approaching zero as in the bulk material. It turns out that this effect results in what Ziman described as the “problem of long longitudinal waves” [J. M. Ziman, Electrons and Phonons: The Theory of Transport Phenomena in Solids (Clarendon, Oxford, 1962)], which states that the thermal conductivity of a material increases as its length is increased due to the vanishing scattering for long-wavelength phonons. We show that this thermal transport improvement also appears in nanowires as their diameter is decreased below D?=?5?nm (not only as the length increases), originating from the increase in the density of the long wavevector modes. The observation is present under ballistic transport conditions, and further enhanced with the introduction of phonon-phonon scattering. Because of this, in such ultra-narrow nanowires, as the diameter is reduced, phonon transport is dominated more and more by lower energy phonons with longer mean-free paths. We show that ?80% of the heat is carried by phonons with energies less than 5?meV, most with mean-free paths of several hundreds of nanometers.

  9. si

    Office of Legacy Management (LM)

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  10. Magnetic and transport properties of amorphous Tb-Si alloys near the metal-insulator transition M. Liu and F. Hellman

    E-Print Network [OSTI]

    Hellman, Frances

    Magnetic and transport properties of amorphous Tb-Si alloys near the metal-insulator transition M; revised manuscript received 18 November 2002; published 4 February 2003 The magnetic and transport as a function of temperature. The spin-glass freezing seen in amorphous Gd-Si alloys is drastically affected

  11. Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells

    SciTech Connect (OSTI)

    Khatri, I.; Tang, Z.; Hiate, T.; Liu, Q.; Ishikawa, R.; Ueno, K.; Shirai, H.

    2013-12-21

    We investigated the graphene oxide (GO) based n-type crystalline silicon (c-Si)/conductive poly(ethylene dioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) Schottky junction devices with optical characterization and carrier transport measurement techniques. The optical transmittance in the UV region decreased markedly for the films with increasing the concentration of GO whereas it increased markedly in the visible-infrared regions. Spectroscopic ellipsometry revealed that the ordinary and extraordinary index of refraction increased with increasing the concentration of GO. The hole mobility also increased from 1.14 for pristine film to 1.85 cm{sup 2}/V s for the 12–15?wt. % GO modified film with no significant increases of carrier concentration. The highest conductivity was found for a 15?wt. % GO modified PEDOT:PSS film: the c-Si/PEDOT:PSS:GO device using this sample exhibited a relatively high power conversion efficiency of 11.04%. In addition, the insertion of a 2–3?nm-thick GO thin layer at the c-Si/PEDOT:PSS interface suppressed the carrier recombination efficiency of dark electron and photo-generated hole at the anode, resulting in the increased photovoltaic performance. This study indicates that the GO can be good candidates for hole transporting layer of c-Si/PEDOT:PSS Schottky junction solar cell.

  12. Oxygen exchange and transport in thin zirconia films on Si,,100... B. W. Busch, W. H. Schulte, E. Garfunkel, and T. Gustafsson

    E-Print Network [OSTI]

    Garfunkel, Eric

    Oxygen exchange and transport in thin zirconia films on Si,,100... B. W. Busch, W. H. Schulte, E 31 August 2000 The composition and atomic depth distributions of ultrathin zirconia films ( 30 Å diffusion of O in monoclinic and tetragonal zirconia, the diffusivity of O in SiO2

  13. Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

    SciTech Connect (OSTI)

    Yu, Cui; Liu, Qingbin; Li, Jia; Lu, Weili; He, Zezhao; Cai, Shujun; Feng, Zhihong

    2014-11-03

    We investigate the temperature dependent electrical transport properties of quasi-free standing bilayer graphene on 4H-SiC (0001) substrate. Three groups of monolayer epitaxial graphene and corresponding quasi-free standing bilayer graphene with different crystal quality and layer number homogeneity are prepared. Raman spectroscopy and atomic-force microscopy are used to obtain their morphologies and layer number, and verify the complete translation of buffer layer into graphene. The highest room temperature mobility reaches 3700?cm{sup 2}/V·s for the quasi-free standing graphene. The scattering mechanism analysis shows that poor crystal quality and layer number inhomogeneity introduce stronger interacting of SiC substrate to the graphene layer and more impurities, which limit the carrier mobility of the quasi-free standing bilayer graphene samples.

  14. Magneto-transport properties of oriented Mn{sub 2}CoAl films sputtered on thermally oxidized Si substrates

    SciTech Connect (OSTI)

    Xu, G. Z.; Du, Y.; Zhang, X. M.; Liu, E. K.; Wang, W. H. Wu, G. H.; Zhang, H. G.

    2014-06-16

    Spin gapless semiconductors are interesting family of materials by embracing both magnetism and semiconducting due to their unique band structure. Its potential application in future spintronics requires realization in thin film form. In this Letter, we report fabrication and transport properties of spin gapless Mn{sub 2}CoAl films prepared on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673?K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity, and linear magnetoresistance representative of the transport signatures of spin gapless semiconductors. The magnetic properties of the films have also been investigated and compared to that of bulk Mn{sub 2}CoAl, showing small discrepancy induced by the composition deviation.

  15. Experimental Evidence of Non-Diffusive Thermal Transport in Si and GaAs

    E-Print Network [OSTI]

    Johnson, Jeremy A.

    The length-scales at which thermal transport crosses from the diffusive to ballistic regime are of much interest particularly in the design and improvement of nano-structured materials. In this work, we demonstrate that ...

  16. Transport and noise properties of Si nanowire channels with different lengths before and after gamma radiation treatment

    SciTech Connect (OSTI)

    Li, Jing; Vitusevich, Svetlana; Pud, Sergii; Sydoruk, Viktor; Offenhäusser, Andreas; Petrychuk, Mykhailo; Danilchenko, Boris

    2013-12-04

    The transport properties of Si nanowire (NW) structures fabricated on the basis of silicon on insulator (SOI) wafers were studied using noise spectroscopy before and after treatment with small doses of gamma radiation. The total resistance obtained from the I-V characteristics of Si NW structures scaled perfectly with length. Normalized flicker noise demonstrated 1/L{sup 2} dependence, which is a characteristic of dominant noise contribution from near-contact regions. The behavior changed to 1/L dependence after a small dose (1×10{sup 4} Gy) of gamma radiation treatment. Comparison of the random telegraph signal (RTS) noise parameters in the samples with small lengths before and after the treatment revealed a decrease in RTS amplitude and a shift to a lower frequency range after gamma irradiation. These results confirmed that the main changes in the samples were related to strain relaxation near-contact regions. In addition, such treatment resulted in a considerable decrease in the scattering data of device parameters.

  17. Effect of Mn substitution on the transport properties of co-sputtered Fe{sub 3?x}Mn{sub x}Si epilayers

    SciTech Connect (OSTI)

    Tang, M.; Jin, C.; Bai, H. L.

    2014-11-07

    Motivated by the theoretical calculations that Fe{sub 3?x}Mn{sub x}Si can simultaneously exhibit a high spin polarization with a high Curie temperature to be applied in spintronic devices, and in order to further study the effect of Mn contents on the physical properties of Fe{sub 3?x}Mn{sub x}Si, we have investigated the effect of Mn substitution on the transport properties of epitaxial Fe{sub 3?x}Mn{sub x}Si (0?x?1) films systematically. The Fe{sub 3?x}Mn{sub x}Si films were epitaxially grown on MgO(001) plane with 45° rotation. The magnetization for various x shows enhanced irreversibility, implying the antiferromagnetic ordering induced by the substitution of Mn. A metal-semiconductor crossover was observed due to the enhanced disorders of interactions and the local lowering of symmetry induced by the substitution of Mn. The single-domain state in the Fe{sub 3?x}Mn{sub x}Si films leads to twofold symmetric curves of the anisotropic magnetoresistance and planar Hall resistivity.

  18. Dependence of dynamic magnetization and magneto-transport properties of FeAlSi films with oblique sputtering studied via spin rectification effect

    SciTech Connect (OSTI)

    Soh, Wee Tee; Ong, C. K. [Department of Physics, Center for Superconducting and Magnetic Materials, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore); Zhong, Xiaoxi, E-mail: xiaoxi.zhong@gmail.com [Department of Physics, Center for Superconducting and Magnetic Materials, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore); School of Materials Science and Engineering, Sichuan University, Chengdu 610065 (China)

    2014-09-15

    FeAlSi (Sendust) is known to possess excellent soft magnetic properties comparable to traditional soft magnetic alloys such as NiFe (Permalloy), while having a relatively higher resistance for lower eddy current losses. However, their dynamic magnetic and magneto-transport properties are not well-studied. Via the spin rectification effect, we electrically characterize a series of obliquely sputtered FeAlSi films at ferromagnetic resonance. The variations of the anisotropy fields and damping with oblique angle are extracted and discussed. In particular, two-magnon scattering is found to dominate the damping behavior at high oblique angles. An analysis of the results shows large anomalous Hall effect and anisotropic magneto-resistance across all samples, which decreases sharply with increasing oblique incidence.

  19. Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films

    E-Print Network [OSTI]

    Castro Galnares, Sebastián

    2010-01-01

    Solar cells have become an increasingly viable alternative to traditional, pollution causing power generation methods. Although crystalline silicon (c-Si) modules make up most of the market, thin films such as hydrogenated ...

  20. Transportation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservationBio-Inspired SolarAbout / Transforming Y-12Capacity-Forum Sign InTransportation

  1. Modeling analysis of core-shell Si/SiGe nanowires

    E-Print Network [OSTI]

    Tang, Ming Y., 1979-

    2004-01-01

    (cont.) a composition that results in a high mobility has a very promising thermoelectric performance. Lastly, the thermoelectric-related transport properties for a Si/SiGe core-shell nanowire are compared with the related ...

  2. A low cost network of spectrometer radiation detectors based on the ArduSiPM a compact transportable Software/Hardware Data Acquisition system with Arduino DUE

    E-Print Network [OSTI]

    Bocci, Valerio; Iacoangeli, Francesco; Nuccetelli, Massimo; Recchia, Luigi

    2015-01-01

    The necessity to use Photo Multipliers (PM) as light detector limited in the past the use of crystals in radiation handled device preferring the Geiger approach. The Silicon Photomultipliers (SiPMs) are very small and cheap, solid photon detectors with good dynamic range and single photon detection capability, they are usable to supersede in some application cumbersome and difficult to use Photo Multipliers (PM). A SiPM can be coupled with a scintillator crystal to build efficient, small and solid radiation detector. A cost effective and easily replicable Hardware software module for SiPM detector readout is made using the ArduSiPM solution [1]. The ArduSiPM is an easily battery operable handled device using an Arduino DUE (an open Software/Hardware board) as processor board and a piggy-back custom designed board (ArduSiPM Shield), the Shield contains all the blocks features to monitor, set and acquire the SiPM using internet network.

  3. Magnetic Properties of Single-Crystalline CoSi Nanowires

    E-Print Network [OSTI]

    Kim, Bongsoo

    Si nanowires with B20 crystal structure are synthesized by a vapor-transport-based method. The reaction-cooled (ZFC-FC) measurements from the nanowire ensemble show freezing of the disordered surface spins at low and electrical transport properties.1 While MnSi shows low- temperature helimagnetic order,2 FeSi is a small

  4. FRV USA formerly Fotowatio Renewable Ventures LLC | Open Energy Information

    Open Energy Info (EERE)

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  5. FRV formerly Fotowatio Energia Solar SL | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePowerEdisto Electric Coop,ErosionNewCoal Jump to: navigation,FRED Home

  6. Effect of Cr substitution on the magnetic and magnetic-transport properties of Fe{sub 2}Mn{sub 1-x}Cr{sub x}Si alloys

    SciTech Connect (OSTI)

    Pal, Lakhan; Gupta, Sachin; Suresh, K. G.; Nigam, A. K.

    2014-05-07

    Fe{sub 2}Mn{sub 1-x}Cr{sub x}Si (x?=?0, 0.1, and 0.2) alloys were investigated for their magnetic and transport properties in view of the expected half metallicity. It is found that Cr substitution suppresses the antiferromagnetic phase present in parent Fe{sub 2}MnSi, which completely disappears for x?=?0.2. Curie temperature of the alloys increases from 230?K to 299?K as x is increased from 0 to 0.2. The value of the Rhodes-Wohlfarth ratio indicates that the system shows iterant magnetism. Resistivity measurements also show absence of antiferromagnetic phase for x?=?0.2. Resistivity data have been fitted by considering the electron-phonon and electron-magnon scattering contributions, which indicates the presence of half metallicity in these compounds. Temperature dependence of resistivity data shows magnetoresistance of ?3% and ?2.5% at Curie temperature with applied field of 50 kOe for x?=?0.1 and 0.2, respectively.

  7. Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2

    E-Print Network [OSTI]

    Pantelides, Sokrates T.

    facilitating enhanced electron tunneling through the oxide. The possible nature of the radiation Carrier movement injection, transport, tunneling, and recombination and charge trapping in gate oxides-induced leakage current SILC has been attributed to neutral oxide defects, which mediate electron tunneling across

  8. Transportes em Revista.com Pas: Portugal

    E-Print Network [OSTI]

    Instituto de Sistemas e Robotica

    Transportes em Revista.com País: Portugal Period.: Diária Âmbito: Online Pag.: 1 de 2ID: 41904396 22-05-2012 Receba gr átis a Transportes Online | Assinar a Transportes em Revista | Fazer da TR a sua Transport Rodas de mudança Et si nos villes #12;Transportes em Revista.com País:

  9. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-01-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n{sup ++} Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  10. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  11. Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes

    E-Print Network [OSTI]

    1 Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes Stefanie Wolf1 transport in Si nanomeshes. Phonons are treated semiclassically as particles of specific energy and velocity, ii) the roughness amplitude of the pore surfaces on the thermal conductivity of the nanomeshes. We

  12. Resonant tunneling with high peak to valley current ratio in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers at room temperature

    SciTech Connect (OSTI)

    Chen, D. Y.; Sun, Y.; He, Y. J.; Xu, L.; Xu, J.

    2014-01-28

    We have investigated carrier transport in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V{sup 2}) as a function of 1/V and ln(I) as a function of V{sup 1/2}. Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages.

  13. SiNode Systems

    Broader source: Energy.gov [DOE]

    SiNode Systems is a battery materials venture developing silicon-graphene anodes for the next generation of lithium-ion batteries. SiNode anodes offer higher battery capacity and faster charging rates, all while being produced via a low cost solution chemistry-based manufacturing process.

  14. GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia)

    E-Print Network [OSTI]

    Ge­Si intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia) Laboratori December 1999 Exploiting Ge K-edge x-ray absorption spectroscopy we provide direct evidence of Si­Ge intermixing in self-organized strained and unstrained Ge quantum dots on Si, and provide a quantitative

  15. Sustainable Transport

    E-Print Network [OSTI]

    Webber, Melvin

    2006-01-01

    THOUGHT PIECE Sustainable Transport by Melvin M. Webberwant to sustain any mode of transport only if we judge it todraconian in rejecting transport modes that have failed in

  16. SiRFChipsandSoftware SiRFstar ARCHITECTURE

    E-Print Network [OSTI]

    Berns, Hans-Gerd

    SiRFChipsandSoftware SiRFstar ARCHITECTURE SiRFstar architecture builds on the high-performance Si, computing power and flexibility. It is the first GPS architecture designed to be available both as a highly architecture for stand- alone GPS based products. A 50MHz ARM7 CPU has sufficient throughput to support

  17. Transports of Polymer Nanomedicine in the Environment 

    E-Print Network [OSTI]

    Zhang, Ming

    2013-11-14

    QCM-D quartz crystal microbalance with dissipation SEM scanning electron microscopy SFM spectrofluorometry SiNP silica nanoparticles SWNI single-walled carbon nanotubes TEM transmission electron microscopy THF tetrahydrofuran VDW van der Waals....1 Background and Significance ....................................................................................... 1 1.2 Transport Phenomena of Nanoparticles ....................................................................... 5 1.3 Transport...

  18. Pricing of Geometric Transportation Networks Jean Cardinal

    E-Print Network [OSTI]

    Palop del Río, Belén

    by the transportation company. The problem is to find an optimal strategy for the leader. Stackelberg games have found a family of such pricing problems on graphs. We define geometric versions of these problems. We let {(si the one considered best. In this paper, we play the role of the transportation company whose goal

  19. Multiparametric approach for the evaluation of lipid nanoparticles for siRNA delivery

    E-Print Network [OSTI]

    Alabi, Christopher A.

    Nanoparticle-mediated siRNA delivery is a complex process that requires transport across numerous extracellular and intracellular barriers. As such, the development of nanoparticles for efficient delivery would benefit ...

  20. Noncontacting laser photocarrier radiometric depth profilometry of harmonically modulated band bending in the space-charge layer at doped SiO{sub 2}-Si interfaces

    SciTech Connect (OSTI)

    Mandelis, Andreas; Batista, Jerias; Gibkes, Juergen; Pawlak, Michael; Pelzl, Josef [Institute fuer Experimentalphysik III, Festkoerperspekroskopie, Ruhr-Universitaet Bochum, Bochum D-44801, Germany and Center for Advanced Diffusion-Wave Technologies, Department of Mechanical and Industrial Engineering, University of Toronto, Ontario, M5S 3G8 (Canada); Center for Advanced Diffusion-Wave Technologies, Department of Mechanical and Industrial Engineering, University of Toronto, Ontario, M5S 3G8 (Canada); Institut fuer Experimentalphysik III, Festkoerperspekroskopie, Ruhr-Universitaet Bochum, Bochum D-44801 (Germany); Institut fuer Experimentalphysik III, Festkoerperspekroskopie, Ruhr-Universitaet Bochum, Bochum D-44801, Germany and Institute of Physics, Nicolaus Copernicus University, Grudziadzka 5/7, 87-100 Torun (Poland); Institut fuer Experimentalphysik III, Festkoerperspekroskopie, Ruhr-Universitat Bochum, Bochum D-44801 (Germany)

    2005-04-15

    Laser infrared photocarrier radiometry (PCR) was used with a harmonically modulated low-power laser pump and a superposed dc superband-gap optical bias (a secondary laser beam) to control and monitor the space-charge-layer (SCL) width in oxidized p-Si-SiO{sub 2} and n-Si-SiO{sub 2} interfaces (wafers) exhibiting charged interface-state related band bending. Applying the theory of PCR-SCL dynamics [A. Mandelis, J. Appl. Phys. 97, 083508 (2005)] to the experiments yielded various transport parameters of the samples as well as depth profiles of the SCL exhibiting complete ( p-type Si) or partial (n-type Si) band flattening, to a degree controlled by widely different minority-carrier capture cross section at each interface. The uncompensated charge density at the interface was also calculated from the theory.

  1. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01

    Claeys, et al. , "Si versus Ge for future microelectronics,"in Selectively Doped Si/Si x Ge 1-x Superlattices," PhysicalA. Fitzgerald, et al. , "Relaxed Ge x Si 1-x structures for

  2. Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si(001)

    SciTech Connect (OSTI)

    Zhang, J. J. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden (Germany)

    2013-09-30

    We investigate the growth of self-assembled Ge nanostructures on top of embedded Ge nanowires on Si(001) substrates. Ge nanostructures, such as nanodashes, nanodumbbells, and dot chains are observed simply by tuning the growth temperature and thickness of the Si spacer between the Ge layers. The self-assembly process is governed by the surface strain fields generated by the embedded Ge nanowires and is well-described by our theoretical calculations. The catalyst-free and horizontal growth of such Ge nanostructures directly on Si(001) is attractive for investigating exotic transport properties through Si/Ge-based quantum devices.

  3. Non-Tracial Free Transport and Applications

    E-Print Network [OSTI]

    Nelson, Brent Andrew

    2015-01-01

    tracial transport . . . . . . . . . . . . . . . . . . . .the transport element . . . . . . . . . . . . . .Free Transport . . . . . . . . . . . .

  4. Tailoring of a metastable material: alfa-FeSi2 thin film

    SciTech Connect (OSTI)

    Cao, Guixin; Singh, David J; Zhang, Xiaoguang; Samolyuk, German D; Qiao, Liang; Parish, Chad M; Ke, Jin; Zhang, Yanwen; Guo, Hangwen; Tang, Siwei; Wang, Wenbin; Yi, Jieyu; Cantoni, Claudia; Siemons, Wolter; Payzant, E Andrew; Biegalski, Michael D; Ward, Thomas Zac; Sales, Brian C; Mandrus, D.; Stocks, George Malcolm; Gai, Zheng

    2015-01-01

    The epitaxially stabilized metallic -FeSi2 thin films on Si(001) were grown using pulsed laser deposition. While the bulk material of -FeSi2 is a high temperature metastable phase and nonmagnetic, the thin film is stabilized at room temperature and shows unusual electronic transport and magnetic properties due to strain modification. The transport renders two different conducting states with a strong crossover at 50 K accompanied by an onset of ferromagnetism as well as a substantial magnetocaloric effect and magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of -FeSi2 obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our findings provide an example of a tailored material with interesting physics properties for practical applications.

  5. Photoluminescence from electron-hole plasmas confined in Si/Si 1-,Ge,/Si quantum wells

    E-Print Network [OSTI]

    Photoluminescence from electron-hole plasmas confined in Si/Si 1-,Ge,/Si quantum wells X. Xiao, C 1992) We report the first observation of photoluminescence from electron-hole plasmas in Si/S&,sGe of the physical processes un- derlying luminescence in Si, -,GeX alloys, especially at high carrier densities

  6. Sustainable Transportation

    SciTech Connect (OSTI)

    2012-09-01

    This document highlights DOE's Office of Energy Efficiency and Renewable Energy's advancements in transportation technologies, alternative fuels, and fuel cell technologies.

  7. Defects in Ge and Si caused by 1 MeV Si+ implantation*

    E-Print Network [OSTI]

    Florida, University of

    Defects in Ge and Si caused by 1 MeV Si+ implantation* D. P. Hickeya Department of Materials defect formation and evolution in the 001 Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no 311 defect

  8. Single-Walled Carbon Nanotubes and Graphene as Hole Transport Layer & Electrode for Solar Cells Shigeo Maruyama

    E-Print Network [OSTI]

    Maruyama, Shigeo

    Single-Walled Carbon Nanotubes and Graphene as Hole Transport Layer & Electrode for Solar Cells-Si solar cell [1], dry-deposited SWNTs-Si solar cell [2], graphene-Si solar cells, organic solar cell (OSC) [3] and perovskite-type solar cells [4]. Using millimeter-scale monocrystalline single-layer graphene

  9. OXYGEN TRANSPORT CERAMIC MEMBRANES

    SciTech Connect (OSTI)

    Dr. Sukumar Bandopadhyay; Dr. Nagendra Nagabhushana

    2003-01-01

    In the present quarter, experiments are presented on ceramic/metal interactions of Zirconia/Ni-B-Si system and with a thin Ti coating deposited on zirconia surface. Processing of perovskites of LSC, LSF and LSCF composition for evaluation of mechanical properties as a function of environment are begun. The studies are to be in parallel with LSFCO composition to characterize the segregation of cations and slow crack growth in environmental conditions. La{sub 1-x}Sr{sub x}FeO{sub 3-d} has also been characterized for paramagnetic ordering at room temperature and the evolution of magnetic moments as a function of temperature are investigated. Investigation on the thermodynamic properties of the membrane materials are continued to develop a complete model for the membrane transport.

  10. Transportation Plan 

    E-Print Network [OSTI]

    Boreo, Andrea; Li, Wei; Wunnenbuger, Douglas; Giusti, Cecilia; Cooper, John T.; Masterson, Jaimie

    2015-01-01

    Mobility throughout a community ensures freedom of movement and enhances quality of life. Traffic congestion, pollution, urban sprawl, social exclusion, safety and health can decrease mobility and should be a part of a sustainable transportation...

  11. electrifyingthefuture transportation

    E-Print Network [OSTI]

    Birmingham, University of

    programme of electrification and the potential introduction of diesel hybrids. The Department for Transport vehicles Wind turbine systems Industrial equipment The lab has full ethernet capability which will enable

  12. XAFS study of local disorder in the a-GdxSi1x amorphous magnetic semiconductor D. Haskel,1

    E-Print Network [OSTI]

    Haskel, Daniel

    transport properties in the presence of disorder. It has been shown recently1 that a-GdxSi1 x exhibits Gd moments lead to a spin glass freezing at low temperatures ( 10 K) and suppression, as Gd clustering would strongly in- fluence our understanding of both transport and magnetization

  13. SUPPORTING INFORMATION Si Microwire Solar Cells: Improved Efficiency with a

    E-Print Network [OSTI]

    S1 SUPPORTING INFORMATION Si Microwire Solar Cells: Improved Efficiency with a Conformal SiO2 Layer improvements (%) of Si microwire solar cells (6 µµµµm height) after conformal SiO2 coating SiO2 thickness Jsc

  14. Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical in an a-Si based multiple- junction solar cell. 1. INTRODUCTION Narrow bandgap amorphous SiGe (a

  15. Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications

    E-Print Network [OSTI]

    Goh, Johnathan Jian Ming

    2006-01-01

    This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

  16. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Tape Casting TiC+Si Powders

    SciTech Connect (OSTI)

    Henager, Charles H.; Kurtz, Richard J.; Canfield, Nathan L.; Shin, Yongsoon; Luscher, Walter G.; Mansurov, Jirgal; Roosendaal, Timothy J.; Borlaug, Brennan A.

    2014-03-03

    This work discusses the latest developments in TiC + Si displacement reaction joining at PNNL based on new work to produce tape-cast powders for improved SiC-joints.

  17. Large thermoelectric figure of merit in Si1-xGex nanowires Lihong Shi,1

    E-Print Network [OSTI]

    Li, Baowen

    Large thermoelectric figure of merit in Si1-xGex nanowires Lihong Shi,1 Donglai Yao,1 Gang Zhang,2 transport equation, we investigate composition effects on the thermoelectric properties of silicon thermoelectric figure of merit ZT Refs. 1­4 due to both enhancement in the power factor through increasing

  18. Graphene and SWNT film as Hole Transport Layer and Electrode for Solar Cells Shigeo Maruyama

    E-Print Network [OSTI]

    Maruyama, Shigeo

    Graphene and SWNT film as Hole Transport Layer and Electrode for Solar Cells Shigeo Maruyama], dry-deposited SWNTs-Si solar cell [4], graphene-Si solar cells, organic solar cell (OSC) and perovskite-type solar cells. Using millimeter-scale monocrystalline single-layer graphene and honeycomb

  19. Preface: Nonclassical Transport

    E-Print Network [OSTI]

    Bolshov, L.

    2010-01-01

    models of solute transport in highly heterogeneous geologicSemenov. 2008b. Nonclassical transport processes in geologicand L. Matveev. 2008. Transport regimes and concentration

  20. Intelligent Transport Systems

    E-Print Network [OSTI]

    Deakin, Elizabeth; Frick, Karen Trapenberg; Skabardonis, Alexander

    2009-01-01

    in Sustainable Urban Transport: City Interview Synthesis (of Leeds, Institute for Transport Studies, forthcoming.I NTELLIGENT TRANSPORT SYSTEMS LINKING TECHNOLOGY AND

  1. Sustainability and Transport

    E-Print Network [OSTI]

    Gilbert, Richard

    2006-01-01

    Gilbert is a Toronto-based transport and energy consultantof the forthcoming book Transport Revolutions: Making theand substantial transition to transport systems based on

  2. Sandia Energy - Transportation Safety

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transportation Safety Home Stationary Power Nuclear Fuel Cycle Nuclear Energy Safety Technologies Risk and Safety Assessment Transportation Safety Transportation SafetyTara...

  3. Numerical design of SiC bulk crystal growth for electronic applications

    SciTech Connect (OSTI)

    Wejrzanowski, T.; Grybczuk, M.; Kurzydlowski, K. J.; Tymicki, E.

    2014-10-06

    Presented study concerns numerical simulation of Physical Vapor Transport (PVT) growth of bulk Silicon Carbide (SiC) crystals. Silicon Carbide is a wide band gap semiconductor, with numerous applications due to its unique properties. Wider application of SiC is limited by high price and insufficient quality of the product. Those problems can be overcame by optimizing SiC production methods. Experimental optimization of SiC production is expensive because it is time consuming and requires large amounts of energy. Numerical modeling allows to learn more about conditions inside the reactor and helps to optimize the process at much lower cost. In this study several simulations of processes with different reactor geometries were presented along with discussion of reactor geometry influence on obtained monocrystal shape and size.

  4. Effect of Si substrate on interfacial SiO{sub 2} scavenging in HfO{sub 2}/SiO{sub 2}/Si stacks

    SciTech Connect (OSTI)

    Li, Xiuyan, E-mail: xiuyan@adam.t.u-tokyo.ac.jp; Yajima, Takeaki; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-11-03

    The scavenging kinetics of an ultra-thin SiO{sub 2} interface layer (SiO{sub 2}-IL) in an HfO{sub 2}/SiO{sub 2}/Si stack is discussed by focusing on the substrate effect in addition to oxygen diffusion. {sup 18}O tracing experiments demonstrate that the O-atom moves from the SiO{sub 2}-IL to the HfO{sub 2} layer during scavenging. SiO{sub 2}-IL scavenging with various substrates (Si, SiC, and sapphire) has been found to be significantly different, which suggests that the Si in the substrate is also necessary to continuously cause the scavenging. Based on these findings and thermodynamic considerations, a kinetic model where oxygen vacancy (V{sub O}) transferred from the HfO{sub 2} reacts with the SiO{sub 2}, which is in contact with the Si-substrate, is proposed for the SiO{sub 2}-IL scavenging.

  5. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

    E-Print Network [OSTI]

    Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Gianni was arranged by Prof. C.K. Maiti Abstract Techniques for fabricating strained Si, SiGe, and Ge on-insulator include SIMOX, Ge condensation and wafer bonding. In this paper, a brief introduction of each method

  6. Coaxial Si/anodic titanium oxide/Si nanotube arrays for lithium-ion battery anode

    E-Print Network [OSTI]

    Zhou, Chongwu

    Nano Res 1 Coaxial Si/anodic titanium oxide/Si nanotube arrays for lithium-ion battery anode Titanium Oxide / Si Nanotube Arrays for Lithium-ion Battery Anode JiepengRong,,§Xin Fang Oxide / Si Nanotube Arrays for Lithium-ion Battery Anode Jiepeng Rong,1,§ Xin Fang,1,§ Mingyuan Ge,1

  7. SUSTAINABLE TRANSPORTATION ENERGY PATHWAYS

    E-Print Network [OSTI]

    California at Davis, University of

    SUSTAINABLE TRANSPORTATION ENERGY PATHWAYS A Research Summary for Decision Makers Edited by Joan Ogden and Lorraine Anderson #12;SUSTAINABLE TRANSPORTATION ENERGY PATHWAYS #12;SUSTAINABLE;6 SUSTAINABLE TRANSPORTATION ENERGY PATHWAYS ACKNOWLEDGEMENTS #12;1 SUSTAINABLE TRANSPORTATION ENERGY PATHWAYS

  8. Beam Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room News PublicationsAudits & Inspections AuditsBarbara McClintockSecurityBeam Transport Beam

  9. Stochastic Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effect Photovoltaics -7541C.3X-rays3 Prepared by:'!Transport in PPCD Discharges by

  10. Greening Transportation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunitiesNERSC GettingGraphene's 3DGreenGreenTransportation

  11. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom); Dobbie, A.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7A (United Kingdom)

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1?x}Ge{sub x} alloys for germanium concentrations x???0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28?

  12. Evidence for energy coupling from the SiD vibration mode to the SiSi and SiO vibration modes at the SiO2 Si interface

    E-Print Network [OSTI]

    Chen, Zhi

    at the SiO2 ÕSi interface Zhi Chen,a) Jun Guo, and Pangleen Ong Department of Electrical and Computer

  13. Propagation of misfit dislocations from buffer/Si interface into Si

    DOE Patents [OSTI]

    Liliental-Weber, Zuzanna (El Sobrante, CA); Maltez, Rogerio Luis (Porto Alegre, BR); Morkoc, Hadis (Richmond, VA); Xie, Jinqiao (Raleigh, VA)

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  14. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Tape Casting TiC+Si Powders

    SciTech Connect (OSTI)

    Henager, Charles H.; Kurtz, Richard J.; Canfield, Nathan L.; Shin, Yongsoon; Luscher, Walter G.; Mansurov, Jirgal; Roosendaal, Timothy J.; Borlaug, Brennan A.

    2013-08-06

    The use of SiC composites in fusion environments likely requires joining of plates using reactive joining or brazing. One promising reactive joining method uses solid-state displacement reactions between Si and TiC to produce Ti3SiC2 + SiC. We continue to explore the processing envelope for this joint for the TITAN collaboration in order to produce optimal joints to undergo irradiation studies in HFIR. One noted feature of the joints produced using tape-calendared powders of TiC+Si has been the large void regions that have been apparently unavoidable. Although the produced joints are very strong, these voids are undesirable. In addition, the tapes that were made for this joining were produced about 20 years ago and were aging. Therefore, we embarked on an effort to produce some new tape cast powders of TiC and Si that could replace our aging tape calendared materials.

  15. Stability of SiC-Matrix Microencapsulated Fuel Constituents at Relevant LWR Conditions

    SciTech Connect (OSTI)

    Terrani, Kurt A; Katoh, Yutai; Leonard, Keith J; Perez-Bergquist, Alex G; Silva, Chinthaka M; Snead, Lance Lewis

    2014-01-01

    This paper addresses certain key feasibility issues facing the application of SiC-matrix microencapsulated fuels for light water reactor application. Issues addressed are the irradiation stability of the SiC-based nano-powder ceramic matrix under LWR-relevant irradiation conditions, the presence or extent of reaction of the SiC matrix with zirconium-based cladding, the stability of the inner and outer pyrolytic graphite layers of the microencapsulated (TRISO) particle at this uncharacteristically low irradiation temperature, and the state of the particle-matrix interface following irradiation which could possibly effect thermal transport. In the process of determining these feasibility issues microstructural evolution and change in dimension and thermal conductivity was studied. As a general finding the SiC matrix was found to be quite stable with behavior similar to that of CVD SiC. In magnitude the irradiation-induced swelling of the matrix material was slightly higher and irradiation-degraded thermal conductivity was slightly lower as compared to CVD SiC. No significant reaction of this SiC-based nano-powder ceramic matrix material with Zircaloy was observed. Irradiation of the TRISO in the 320-360 C range to a maximum dose of 7.7 1025 n/m2 (E > 0.1 MeV) did not have significant negative impact on the constituent layers of the TRISO fuel. At the highest dose studied layer structure and interface integrity remained essentially unchanged with good apparent thermal transport through the microsphere to the surrounding matrix.

  16. Full potential calculation of electronics and thermoelectric properties of doped Mg{sub 2}Si

    SciTech Connect (OSTI)

    Poopanya, P. [Program of Physics, Faculty of Science, Ubon Ratchathani Rajabhat University, Ubon Ratchathani, 34000 (Thailand); Yangthaisong, A. [Computational Materials and Device Physics group, Faculty of Science, Ubon Ratchathani University, Ubon Ratchathani, 34190 (Thailand)

    2013-12-04

    We present the calculations of the electronic structure and transport properties on the anti-fluorite Mg{sub 2}Si using the full potential linearized augmented plane-wave (FP-LAPW) method and the semi-classical Boltzmann theory. The modified Becke-Johnson (mBJ) exchange potentials are used to derive energy gaps and correct band gaps according to experimental values. It is found that Mg{sub 2}Si is an indirect band gap (??X) material with the gap of 0.56 eV which is in good agreement with the experimental observation. Note that the band structure of Mg{sub 2}Si is directly used in combination with the semi-classical Boltzmann theory to obtain the transport coefficients. It is found that the material is the n-type semiconductor with the lowest electron concentration of 3.03×10{sup 14} cm{sup ?3} at 300 K. We have also calculated the thermoelectric properties of Mg{sub 2}Si based on the rigid band approximation by varying the p-type and n-type doping levels. At room temperature, the highest power factor for p-type and n-type dopants are obtained at the hole and electron concentration of 1.63×10{sup 20} cm{sup ?3} and 1.15×1021 cm{sup ?3}, respectively. From the electronic states, we also found that the n-type doping region is dominated by the Mg?2p{sup 6} 3s{sup 2} and Si?3p{sup 2} states, while the Mg?2p{sup 6} and Si?3p{sup 2} states are important in the p-type doped Mg{sub 2}Si.

  17. Magnetron-sputter epitaxy of {beta}-FeSi{sub 2}(220)/Si(111) and {beta}-FeSi{sub 2}(431)/Si(001) thin films at elevated temperatures

    SciTech Connect (OSTI)

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi [Institute of Materials Research and Engineering (IMRE), A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

    2012-07-15

    {beta}-FeSi{sub 2} thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 Degree-Sign C. On Si(111), the growth is consistent with the commonly observed orientation of [001]{beta}-FeSi{sub 2}(220)//[1-10]Si(111) having three variants, in-plane rotated 120 Degree-Sign with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]{beta}-FeSi{sub 2}(431)//[110]Si(001) with four variants, which is hitherto unknown for growing {beta}-FeSi{sub 2}. Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between {beta}-FeSi{sub 2} grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of {beta}-FeSi{sub 2}/Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of {beta}-FeSi{sub 2}(431)/Si(001) is larger than that on the surface of {beta}-FeSi{sub 2}(220)/Si(111).

  18. Transporting particulate material

    DOE Patents [OSTI]

    Aldred, Derek Leslie (North Hollywood, CA); Rader, Jeffrey A. (North Hollywood, CA); Saunders, Timothy W. (North Hollywood, CA)

    2011-08-30

    A material transporting system comprises a material transporting apparatus (100) including a material transporting apparatus hopper structure (200, 202), which comprises at least one rotary transporting apparatus; a stationary hub structure (900) constraining and assisting the at least one rotary transporting apparatus; an outlet duct configuration (700) configured to permit material to exit therefrom and comprising at least one diverging portion (702, 702'); an outlet abutment configuration (800) configured to direct material to the outlet duct configuration; an outlet valve assembly from the material transporting system venting the material transporting system; and a moving wall configuration in the material transporting apparatus capable of assisting the material transporting apparatus in transporting material in the material transporting system. Material can be moved from the material transporting apparatus hopper structure to the outlet duct configuration through the at least one rotary transporting apparatus, the outlet abutment configuration, and the outlet valve assembly.

  19. Transportation Data Programs:Transportation Energy Data Book...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transportation Data Programs:Transportation Energy Data Book,Vehicle Technologies Market Report, and VT Fact of the Week Transportation Data Programs:Transportation Energy Data...

  20. SiD Letter of Intent

    SciTech Connect (OSTI)

    Aihara, H.,; Burrows, P.,; Oreglia, M.,; Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; Zhang, Q.; Srivastava, A.; Butler, J.M.; Goldstein, Joel; Velthuis, J.; Radeka, V.; Zhu, R.-Y.; Lutz, P.; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women's U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  1. The Stellar Imager (SI) Vision Mission

    E-Print Network [OSTI]

    Kenneth G. Carpenter; Carolus J. Schrijver; Margarita Karovska; SI Vision Mission Team

    2006-06-16

    The Stellar Imager (SI) is a UV-Optical, Space-Based Interferometer designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general and asteroseismic imaging of stellar interiors. SI is identified as a "Flagship and Landmark Discovery Mission" in the 2005 Sun Solar System Connection (SSSC) Roadmap and as a candidate for a "Pathways to Life Observatory" in the Exploration of the Universe Division (EUD) Roadmap (May, 2005). SI will revolutionize our view of many dynamic astrophysical processes: its resolution will transform point sources into extended sources, and snapshots into evolving views. SI's science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI's prime goal is to enable long-term forecasting of solar activity and the space weather that it drives. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. The results of the SI "Vision Mission" Study are presented in this paper. Additional information on the SI mission concept and related technology development can be found at URL: http://hires.gsfc.nasa.gov/si/.

  2. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...

  3. Investigation of lateral gated quantum devices in Si/SiGe heterostructures

    E-Print Network [OSTI]

    Lai, Andrew P. (Andrew Pan)

    2013-01-01

    Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Because of this, they are excellent candidates for use as solid state ...

  4. Erosion and Optimal Transport

    E-Print Network [OSTI]

    Birnir, Bjorn; Rowlett, Julie

    2010-01-01

    383 pp. EROSION AND OPTIMAL TRANSPORT [23] I. Ekeland and T.and D. Simons, Sediment transport capacity of overland ?ow,measure spaces via optimal transport, Ann. of Math. (2),

  5. Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

    SciTech Connect (OSTI)

    Petz, C. W.; Floro, J. A.; Yang, D.; Levy, J.

    2012-04-02

    Artificially ordered quantum dot (QD) arrays, where confined carriers can interact via direct exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in ultra-high vacuum (UHV), forming ordered arrays of nanoscale SiC precipitates that have been suggested to template subsequent epitaxial Ge growth to form ordered QD arrays. We show that 3C-SiC nanodots form, in cube-on-cube epitaxial registry with the Si substrate. The SiC nanodots are fully relaxed by misfit dislocations and exhibit small lattice rotations with respect to the substrate. Ge overgrowth at elevated deposition temperatures, followed by Si capping, results in expulsion of the Ge from SiC template sites due to the large chemical and lattice mismatch between Ge and C. Maintaining an epitaxial, low-defectivity Si matrix around the quantum dots is important for creating reproducible electronic and spintronic coupling of states localized at the QDs.

  6. Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells

    E-Print Network [OSTI]

    Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells Q. Mi, X. Xiao report the first room-temperature 1.3 ,um electroluminescence from strained Sir-,Ge,/Si quantum wells to that from the Sit-,GeX wells. A minimum band offset is required to have effective room

  7. Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches

    E-Print Network [OSTI]

    Xie, Xiaoliang Sunney

    Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches Yajie Dong, Guihua Yu, Michael C. Mc/a-Si × Ag NW devices exhibit bistable switching between high (off) and low (on) resistance states with well-defined switching threshold voltages, on/off ratios greater than 104, and current rectification in the on state

  8. COMMUNICATIONS Precipitation of -SiC in Si1 yCy alloys

    E-Print Network [OSTI]

    Kolodzey, James

    COMMUNICATIONS Precipitation of -SiC in Si1 yCy alloys C. Guedj,a) M. W. Dashiell, L. Kulik in intensity while another mode due to incoherent silicon carbide precipitates appeared at 810 cm 1 . For lower is a precursor to SiC precipitation. Theoretical calculations based on the anharmonic Keating model predict

  9. Transporting Hazardous Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transporting Hazardous Materials The procedures given below apply to all materials that are considered to be hazardous by the U.S. Department of Transportation (DOT). Consult your...

  10. Sustainability and Transport

    E-Print Network [OSTI]

    Gilbert, Richard

    2006-01-01

    2005. Integrating Sustainability into the Trans- portationTHOUGHT PIECE Sustainability and Transport by Richardof the concept of sustainability to transport planning. In

  11. Oxygen Transport Ceramic Membranes

    SciTech Connect (OSTI)

    S. Bandopadhyay; N. Nagabhushana

    2003-08-07

    In the present quarter, experiments are presented on ceramic/metal interactions of Zirconia/ Ni-B-Si system and with a thin Ti coating deposited on zirconia surface. Existing facilities were modified for evaluation of environmental assisted slow crack growth and creep in flexural mode. Processing of perovskites of LSC, LSF and LSCF composition were continued for evaluation of mechanical properties as a function of environment. These studies in parallel to those on the LSFCO composition is expect to yield important information on questions such as the role of cation segregation and the stability of the perovskite structure on crack initiation vs. crack growth. Studies have been continued on the La{sub 1-x}Sr{sub x}FeO{sub 3-d} composition using neutron diffraction and TGA studies. A transition from p-type to n-type of conductor was observed at relative low pO{sub 2}, at which the majority carriers changed from the holes to electrons because of the valence state decreases in Fe due to the further loss of oxygen. Investigation on the thermodynamic properties of the membrane materials are continued to develop a complete model for the membrane transport. Data obtained at 850 C show that the stoichiometry in La{sub 0.2}Sr{sub 0.8}Fe{sub 0.8}Cr{sub 0.2}O{sub 3-x} vary from {approx}2.85 to 2.6 over the pressure range studied. From the stoichiometry a lower limit of 2.6 corresponding to the reduction of all Fe{sup 4+} to Fe{sup 3+} and no reduction of Cr{sup 3+} is expected.

  12. Gated Si nanowires for large thermoelectric power factors

    SciTech Connect (OSTI)

    Neophytou, Neophytos, E-mail: N.Neophytou@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Kosina, Hans [Institute for Microelectronics, Vienna University of Technology, Gusshausstrasse 27-29/E360, Vienna A-1040 (Austria)

    2014-08-18

    We investigate the effect of electrostatic gating on the thermoelectric power factor of p-type Si nanowires (NWs) of up to 20?nm in diameter in the [100], [110], and [111] crystallographic transport orientations. We use atomistic tight-binding simulations for the calculation of the NW electronic structure, coupled to linearized Boltzmann transport equation for the calculation of the thermoelectric coefficients. We show that gated NW structures can provide ?5× larger thermoelectric power factor compared to doped channels, attributed to their high hole phonon-limited mobility, as well as gating induced bandstructure modifications which further improve mobility. Despite the fact that gating shifts the charge carriers near the NW surface, surface roughness scattering is not strong enough to degrade the transport properties of the accumulated hole layer. The highest power factor is achieved for the [111] NW, followed by the [110], and finally by the [100] NW. As the NW diameter increases, the advantage of the gated channel is reduced. We show, however, that even at 20?nm diameters (the largest ones that we were able to simulate), a ?3× higher power factor for gated channels is observed. Our simulations suggest that the advantage of gating could still be present in NWs with diameters of up to ?40?nm.

  13. Point contact Andreev spectroscopy of epitaxial Co{sub 2}FeSi Heusler alloys on GaAs (001)

    SciTech Connect (OSTI)

    Lehmann, Hauke; Merkt, Ulrich; Meier, Guido [Institut fuer Angewandte Physik und Zentrum fuer Mikrostrukturforschung, Universitaet Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany); Scholtyssek, Jan M. [Institut fuer Angewandte Physik und Zentrum fuer Mikrostrukturforschung, Universitaet Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany); Institut fuer Elektrische Messtechnik und Grundlagen der Elektrotechnik, Technische Universitaet Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Herrmann, Claudia; Herfort, Jens [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2011-09-15

    The predicted half-metallicity of Co{sub 2}FeSi in combination with its high Curie temperature of above 980 K makes this Heusler alloy interesting for spinelectronics. Thin Co{sub 2}FeSi films are grown by molecular-beam epitaxy on GaAs (001) with a close lattice match. We present a study of point-contact measurements on different films, varying in thickness between 18 nm and 48 nm and in substrate temperature during deposition between 100 deg. C and 300 deg. C. Transport spin polarizations at the Fermi level are determined from differential conductance curves obtained by point-contact Andreev-reflection spectroscopy. A maximum transport spin polarization of about 60% is measured for a 18 nm thin Co{sub 2}FeSi film grown at 200 deg. C.

  14. Monolayer-induced band shifts at Si(100) and Si(111) surfaces

    SciTech Connect (OSTI)

    Mäkinen, A. J. Kim, Chul-Soo; Kushto, G. P.

    2014-01-27

    We report our study of the interfacial electronic structure of Si(100) and Si(111) surfaces that have been chemically modified with various organic monolayers, including octadecene and two para-substituted benzene derivatives. X-ray photoelectron spectroscopy reveals an upward band shift, associated with the assembly of these organic monolayers on the Si substrates, that does not correlate with either the dipole moment or the electron withdrawing/donating character of the molecular moieties. This suggests that the nature and quality of the self-assembled monolayer and the intrinsic electronic structure of the semiconductor material define the interfacial electronic structure of the functionalized Si(100) and Si(111) surfaces.

  15. INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS

    E-Print Network [OSTI]

    INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS SRIKANTH B and Engineering, University of California, Los Angeles, CA 90095. ABSTRACT Relaxed graded Si-Ge/Si layers can of these applications requires a different final Ge concentration in the graded Si-Ge layer. With increasing Ge content

  16. Ambipolar charge transport in microcrystalline silicon thin-film transistors

    SciTech Connect (OSTI)

    Knipp, Dietmar; Marinkovic, M.; Chan, Kah-Yoong; Gordijn, Aad; Stiebig, Helmut

    2011-01-15

    Hydrogenated microcrystalline silicon ({mu}c-Si:H) is a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on ambipolar TFTs based on {mu}c-Si:H prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with flexible substrates. Electrons and holes are directly injected into the {mu}c-Si:H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm{sup 2}/V s and 10-15 cm{sup 2}/V s, respectively. In this work, the electrical characteristics of the ambipolar {mu}c-Si:H TFTs are described by a simple analytical model that takes the ambipolar charge transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar {mu}c-Si:H TFTs.

  17. Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.

    SciTech Connect (OSTI)

    Wendt, Joel Robert; Ten Eyck, Gregory A.; Childs, Kenton David; Celler, G. (SOITEC); Eng, Kevin; Eriksson, Mark A. (University of Wisconsin); Kluskiewicz, Dan (University of New Mexico); Stevens, Jeffrey; Carroll, Malcolm S.; Nordberg, Eric; Lilly, Michael Patrick; Lemp, Thomas; Sheng, Josephine Juin-Jye

    2008-10-01

    There is significant interest in forming quantum bits (qubits) out of single electron devices for quantum information processing (QIP). Information can be encoded using properties like charge or spin. Spin is appealing because it is less strongly coupled to the solid-state environment so it is believed that the quantum state can better be preserved over longer times (i.e., that is longer decoherence times may be achieved). Long spin decoherence times would allow more complex qubit operations to be completed with higher accuracy. Recently spin qubits were demonstrated by several groups using electrostatically gated modulation doped GaAs double quantum dots (DQD) [1], which represented a significant breakthrough in the solid-state field. Although no Si spin qubit has been demonstrated to date, work on Si and SiGe based spin qubits is motivated by the observation that spin decoherence times can be significantly longer than in GaAs. Spin decoherence times in GaAs are in part limited by the random spectral diffusion of the non-zero nuclear spins of the Ga and As that couple to the electron spin through the hyperfine interaction. This effect can be greatly suppressed by using a semiconductor matrix with a near zero nuclear spin background. Near zero nuclear spin backgrounds can be engineered using Si by growing {sup 28}Si enriched epitaxy. In this talk, we will present fabrication details and electrical transport results of an accumulation mode double top gated Si metal insulator semiconductor (MIS) nanostructure, Fig 1 (a) & (b). We will describe how this single electron device structure represent a path towards forming a Si based spin qubit similar in design as that demonstrated in GaAs. Potential advantages of this novel qubit structure relative to previous approaches include the combination of: no doping (i.e., not modulation doped); variable two-dimensional electron gas (2DEG) density; CMOS compatible processes; and relatively small vertical length scales to achieve smaller dots. A primary concern in this structure is defects at the insulator-silicon interface. The Sandia National Laboratories 0.35 {micro}m fab line was used for critical processing steps including formation of the gate oxide to examine the utility of a standard CMOS quality oxide silicon interface for the purpose of fabricating Si qubits. Large area metal oxide silicon (MOS) structures showed a peak mobility of 15,000 cm{sup 2}/V-s at electron densities of {approx}1 x 10{sup 12} cm{sup -2} for an oxide thickness of 10 nm. Defect density measured using standard C-V techniques was found to be greater with decreasing oxide thickness suggesting a device design trade-off between oxide thickness and quantum dot size. The quantum dot structure is completed using electron beam lithography and poly-silicon etch to form the depletion gates, Fig 1 (a). The accumulation gate is added by introducing a second insulating Al{sub 2}O{sub 3} layer, deposited by atomic layer deposition, followed by an Al top gate deposition, Fig. 1 (b). Initial single electron transistor devices using SiO{sub 2} show significant disorder in structures with relatively large critical dimensions of the order of 200-300 nm, Fig 2. This is not uncommon for large silicon structures and has been cited in the literature [2]. Although smaller structures will likely minimize the effect of disorder and well controlled small Si SETs have been demonstrated [3], the design constraints presented by disorder combined with long term concerns about effects of defects on spin decoherence time (e.g., paramagnetic centers) motivates pursuit of a 2nd generation structure that uses a compound semiconductor approach, an epitaxial SiGe barrier as shown in Fig. 2 (c). SiGe may be used as an electron barrier when combined with tensilely strained Si. The introduction of strained-Si into the double top gated device structure, however, represents additional fabrication challenges. Thermal budget is potentially constrained due to concerns related to strain relaxation. Fabrication details related to the introduction of st

  18. Monolithic Ge-on-Si lasers for integrated photonics

    E-Print Network [OSTI]

    Liu, Jifeng

    We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

  19. Transport Equations Thomas Hillen

    E-Print Network [OSTI]

    Hillen, Thomas

    Transport Equations Thomas Hillen supported by NSERC University of Alberta, Edmonton Transport V , V compact and symmetric. Transport Equations ­ p.2/33 #12;Directed Movement The equation pt(t, x of v. Transport Equations ­ p.3/33 #12;With Directional Changes µ: turning rate. T(v, v ): probability

  20. Motor Transport Co. 

    E-Print Network [OSTI]

    Unknown

    2011-09-05

    METROPOLITAN TRANSPORTATION PLAN Prepared by: The Longview Metropolitan Planning Organization In cooperation with: o City of Longview o City of White Oak o Gregg County o Harrison County o Texas Department of Transportation o U.S. Department... of Transportation o Federal Highway Administration o Federal Transit Administration Adopted November 12, 2009 TRANSPORTATION 2035 TABLE OF CONTENTS INTRODUCTION...

  1. Introduction Transport in disordered graphene

    E-Print Network [OSTI]

    Fominov, Yakov

    Introduction Transport in disordered graphene Summary Ballistic transport in disordered graphene P, Gornyi, Mirlin Ballistic transport in disordered graphene #12;Introduction Transport in disordered graphene Summary Outline 1 Introduction Model Experimental motivation Transport in clean graphene 2

  2. A commentary on the 1995 DOT/NRC amendments to the U.S. nuclear transportation regulations

    SciTech Connect (OSTI)

    Grella, A.

    1996-07-01

    This article discusses the major revisions (1995 DOT/NRC ammendments) to the US Nuclear Transportation regulations and their probable impacts on transportation. Areas covered include the following: the LSA and SCO definitions and packaging; radiation protection programs; mandatory use of SI units; changes an additions to the table of A1/A2 radionuclide values; and additional type B package hypothetical accident parameters.

  3. SiN-SiC nanofilm: A nano-functional ceramic with bipolar magnetic semiconducting character

    SciTech Connect (OSTI)

    Zhang, Jiahui; Li, Xingxing; Yang, Jinlong

    2014-04-28

    Nowadays, functional ceramics have been largely explored for application in various fields. However, magnetic functional ceramics for spintronics remain little studied. Here, we propose a nano-functional ceramic of sphalerite SiN-SiC nanofilm with intrinsic ferromagnetic order. Based on first principles calculations, the SiN-SiC nanofilm is found to be a ferromagnetic semiconductor with an indirect band gap of 1.71?eV. By mean field theory, the Curie temperature is estimated to be 304?K, close to room temperature. Furthermore, the valence band and conduction band states of the nanofilm exhibit inverse spin-polarization around the Fermi level. Thus, the SiN-SiC nanofilm is a typical bipolar magnetic semiconductor in which completely spin-polarized currents with reversible spin polarization can be created and controlled by applying a gate voltage. Such a nano-functional ceramic provides a possible route for electrical manipulation of carrier's spin orientation.

  4. Solute embrittlement of SiC

    SciTech Connect (OSTI)

    Enrique, Raúl A., E-mail: enriquer@umich.edu [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48103 (United States); Van der Ven, Anton, E-mail: avdv@engineering.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2014-09-21

    The energies and stresses associated with the decohesion of ?-SiC in the presence of mobile Pd and Ag impurities are studied from first principles. Density functional theory calculations are parameterized with a generalized cohesive zone model and are analyzed within a thermodynamic framework that accounts for realistic boundary conditions in the presence of mobile impurities. We find that Pd impurities will embrittle SiC when Pd is in equilibrium with metallic Pd precipitates. Our thermodynamic analysis predicts that Pd embrittles SiC by substantially reducing the maximum stress of decohesion as a result of a phase transition between decohering planes involving an influx of Pd atoms. The methods presented in this work can be applied to study the thermodynamics of decohesion of SiC in other aggressive environments containing oxygen and water, for example, and yield environment dependent cohesive zone models for use in continuum approaches to study crack propagation and fracture.

  5. Modelling of Si-B-N ceramics

    E-Print Network [OSTI]

    A. Hannemann; J. C. Schoen; C. Oligschleger; M. Jansen

    2000-01-21

    We present results of computer simulations of amorphous Si3B3N7 ceramics. The computed pair correlation functions are in agreement with the experimental results. Regarding the structural properties of the B-N, Si-N and N-Si/B coordination spheres, our results are in full agreement with experimental data. We confirm that silicon is tetrahedrally coordinated by nitrogen, and boron is trigonally planar coordinated by nitrogen. Furthermore we find that the coordination of nitrogen by the cations is also trigonally planar. Additionally our results suggest that a significant structural property of these materials is a heterogenity on a lengthscale of about 0.5nm. The simulation of relaxation and annealing processes of this new substance indicate the existence of rather stable BN3 building units, while the SiN4 building units are comparatively malleable.

  6. ccsd-00097094,version1-21Sep2006 Electron transport through antidot superlattices in Si/SiGe heterostructures: new

    E-Print Network [OSTI]

    Boyer, Edmond

    . T. Renard2,3, , Z. D. Kvon1 , J .C. Portal2,3,4 ,J. M. Hartmann5 1 Institute of Semiconductor Physics, Novosibirsk 630090, Russia; 2 GHMFL, MPI-FKF/CNRS, BP-166, F-38042, Grenoble Cedex9, France; 3

  7. Delay Time ConstantAnalysis for5 Optimization in RF Si/SiGeBipolar Devices

    E-Print Network [OSTI]

    Ng, Wai Tung

    Delay Time ConstantAnalysis for5 Optimization in RF Si/SiGeBipolar Devices I-S.M. Sun,H. E. Xu, R, the optimization of the SiGe epitaxial base, intrinsic collector and base doping profiles, and extrinsic collector restrict the degrees of freedom in device optimization. Furthermore, T S . M. Sun, H.E. Xu, R Tam and W. T

  8. Secure Transportation Management

    SciTech Connect (OSTI)

    Gibbs, P. W.

    2014-10-15

    Secure Transport Management Course (STMC) course provides managers with information related to procedures and equipment used to successfully transport special nuclear material. This workshop outlines these procedures and reinforces the information presented with the aid of numerous practical examples. The course focuses on understanding the regulatory framework for secure transportation of special nuclear materials, identifying the insider and outsider threat(s) to secure transportation, organization of a secure transportation unit, management and supervision of secure transportation units, equipment and facilities required, training and qualification needed.

  9. Roll Casting of Al-25%Si

    SciTech Connect (OSTI)

    Haga, Toshio [Osaka Institute of Technology, Omiya Asahiku Osaka city 535-8585 (Japan); Harada, Hideto [Graduate School of Osaka Institute of Technology, Omiya Asahiku Osaka city 535-8585 (Japan); Watari, Hisaki [Gunma University, Kiryu city, 376-8515 (Japan)

    2011-05-04

    Strip casting of Al-25%Si strip was tried using an unequal diameter twin roll caster. The diameter of the lower roll (large roll) was 1000 mm and the diameter of the upper roll (small roll) was 250 mm. Roll material was mild steel. The sound strip could be cast at the speeds ranging from 8 m/min to 12 m/min. The strip did not stick to the roll without the parting material. The primary Si, which existed at centre area of the thickness direction, was larger than that which existed at other area. The size of the primary Si was smaller than 0.2 mm. Eutectic Si was smaller 5 {mu}m. The as-cast strip was ranging from 2 mm to 3 mm thick and its width was 100 mm. The as-cast strip could be hot rolled down to 1 mm. The hot rolled strip was cold rolled. The primary Si became smaller and the pore occurred around the primary Si after the rolling.

  10. Transparent conductor-Si pillars heterojunction photodetector

    SciTech Connect (OSTI)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang

    2014-08-14

    We report a high-performing heterojunction photodetector by enhanced surface effects. Periodically, patterned Si substrates were used to enlarge the photo-reactive regions and yield proportionally improved photo-responses. An optically transparent indium-tin-oxide (ITO) was deposited on a Si substrate and spontaneously formed an ITO/Si heterojunction. Due to an electrical conductive ITO film, ITO/Si heterojunction device can be operated at zero-bias, which effectively suppresses the dark current, resulting in better performances than those by a positive or a negative bias operation. This zero-bias operating heterojunction device exhibits a short response time (? 22.5?ms) due to the physical reaction to the incident light. We revealed that the location of the space charge region (SCR) is crucial for a specific photon-wavelength response. The SCR space has the highest collection efficiency of the photo-generated carriers. The photo-response can be maximized when we design the photodetector by superposing the SCR space over a corresponding photon-absorption length. The surface enhanced Si pillar devices significantly improved the photo-responses ratios from that of a planar Si device. According to this design scheme, a high photo-response ratio of 5560% was achieved at a wavelength of 600?nm. This surfaced-enhanced heterojunction design scheme would be a promising approach for various photoelectric applications.

  11. Water Transport Within the STack: Water Transport Exploratory...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Within the STack: Water Transport Exploratory Studies Water Transport Within the STack: Water Transport Exploratory Studies Part of a 100 million fuel cell award announced by DOE...

  12. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-07-15

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  13. ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars

    SciTech Connect (OSTI)

    Wang, Dong, E-mail: dong.wang@tu-ilmenau.de; Yan, Yong; Schaaf, Peter [Chair Materials for Electronics, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Sharp, Thomas [Oxford Instruments Plasma Technology Ltd., Yatton, Bristol BS49 4AP (United Kingdom); Schönherr, Sven; Ronning, Carsten [Institute for Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Ji, Ran [SUSS MicroTec Lithography GmbH, Schleissheimer Str. 90, 85748 Garching (Germany)

    2015-01-01

    Porous Si nanopillar arrays are used as templates for atomic layer deposition of ZnO and TiO{sub 2}, and thus, ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars are fabricated. The diffusion of the precursor molecules into the inside of the porous structure occurs via Knudsen diffusion and is strongly limited by the small pore size. The luminescence of the ZnO/porous-Si nanocomposite nanopillars is also investigated, and the optical emission can be changed and even quenched after a strong plasma treatment. Such nanocomposite nanopillars are interesting for photocatalysis and sensors.

  14. Characterization of SiGe/Si multi-quantum wells for infrared sensing

    SciTech Connect (OSTI)

    Moeen, M.; Salemi, A.; Östling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2013-12-16

    SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (2–2500?×?10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

  15. Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates

    SciTech Connect (OSTI)

    Gatti, R.; Boioli, F.; Montalenti, F.; Miglio, Leo [L-NESS and Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano-Bicocca, via R. Cozzi 53, I-20125 Milano (Italy); Grydlik, M.; Brehm, M.; Groiss, H.; Glaser, M.; Fromherz, T.; Schaeffler, F. [Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitaet, Altenberger Str. 69, A-4040 Linz (Austria)

    2011-03-21

    We demonstrate dislocation engineering without oxide masks. By using finite element simulations we show how nanopatterning of Si substrates with (111) trenches provides anisotropic elastic relaxation in a SiGe film, generates preferential nucleation sites for dislocation loops, and allows for dislocation trapping, leaving wide areas free of threading dislocations. These predictions are confirmed by atomic force and transmission electron microscopy performed on overcritical Si{sub 0.7}Ge{sub 0.3} films. These were grown by molecular beam epitaxy on a Si(001) substrate patterned with periodic arrays of selectively etched (111)-terminated trenches.

  16. Midwestern Radioactive Materials Transportation Committee Agenda...

    Office of Environmental Management (EM)

    Midwestern Radioactive Materials Transportation Committee Agenda Midwestern Radioactive Materials Transportation Committee Agenda Midwestern Radioactive Materials Transportation...

  17. Packaging and Transportation Safety

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1995-09-27

    Establishes safety requirements for the proper packaging and transportation of Department of Energy (DOE) offsite shipments and onsite transfers of hazardous materials and for modal transport. Canceled by DOE 460.1A

  18. Packaging and Transportation Safety

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2010-05-14

    The order establishes safety requirements for the proper packaging and transportation of DOE, including NNSA, offsite shipments and onsite transfers of radioactive and other hazardous materials and for modal transportation. Supersedes DOE O 460.1B.

  19. Sustainability and Transport

    E-Print Network [OSTI]

    Gilbert, Richard

    2006-01-01

    also known there as sustainable mobility. This de?nition wasfor De?ning Sustainable Transport and Mobility. [cited 13Sustainable transporta- tion is de?ned as a means to satisfy current transport and mobility

  20. Transportation Management Workshop: Proceedings

    SciTech Connect (OSTI)

    Not Available

    1993-10-01

    This report is a compilation of discussions presented at the Transportation Management Workshop held in Gaithersburg, Maryland. Topics include waste packaging, personnel training, robotics, transportation routing, certification, containers, and waste classification.

  1. Linear Motor Powered Transportation

    E-Print Network [OSTI]

    Thornton, Richard D.

    This special issue on linear-motor powered transportation covers both supporting technologies and innovative transport systems in various parts of the World, as this technology moves from the lab to commercial operations. ...

  2. Transportation Conference Speakers - 4 

    E-Print Network [OSTI]

    Unknown

    2011-08-17

    Laboratory experiments were performed to study and improve longshore sediment transport rate predictions. Measured total longshore transport in the laboratory was approximately three times greater for plunging breakers than spilling breakers. Three...

  3. Transportation Energy Futures Study

    Office of Energy Efficiency and Renewable Energy (EERE)

    Transportation accounts for 71% of total U.S. petroleum consumption and 33% of total greenhouse gas emissions. The Transportation Energy Futures (TEF) study examines underexplored oil-savings and...

  4. Transportation Market Distortions

    E-Print Network [OSTI]

    Litman, Todd

    2006-01-01

    roads and parking facilities is exempt from rent and taxes,road transport relative to rail (which pays rent and taxesroad tolls, parking fees, and Litman, Transportation Market Distortions higher fuel taxes

  5. Introduction to Transportation Planning

    E-Print Network [OSTI]

    Tipple, Brett

    Introduction to Transportation Planning CMP 4710/6710 Fall 2012 3 Credit Hours Room: ARCH 229 of City & Metropolitan Planning; Associate Dean, College of Architecture + Planning; former associate, social equity, fiscal health, and public health. Unfortunately, most transportation planning processes

  6. Transportation Conference Speakers - 1 

    E-Print Network [OSTI]

    Unknown

    2011-08-17

    Thiamin transport in Escherichia coli is a model system to establish the tolerance of derivatives for transport into the cell. Since little is known about what types of thiamin derivatives may be successfully taken into the cell through...

  7. Packaging and Transportation Safety

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1995-09-27

    Establishes safety requirements for the proper packaging and transportation of offsite shipments and onsite transfers of hazardous materials andor modal transport. Cancels DOE 1540.2 and DOE 5480.3

  8. Packaging and Transportation Safety

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1996-10-02

    Establishes safety requirements for the proper packaging and transportation of Department of Energy (DOE) offsite shipments and onsite transfers of hazardous materials and for modal transport. Cancels DOE O 460.1.

  9. Biofuels and Transportation

    E-Print Network [OSTI]

    Minnesota, University of

    Biofuels and Transportation Impacts and Uncertainties Some Observations of a Reformed Ethanol and Logistics Symposium 3 Topics · Why Biofuels · Ethanol Economics · Ethanol Transportation Equipment Biofuels? · National Security · Reduce Imports of oil · Peak Oil · Replace Fossil Resources

  10. Indianapolis Public Transportation Corporation

    SciTech Connect (OSTI)

    Not Available

    2004-12-01

    Fact sheet describes the National Renewable Energy Laboratory's evaluation of Indianapolis Public Transportation Corporation's (IndyGo's) hybrid electric buses.

  11. Parking & Transportation Services Sustainability &

    E-Print Network [OSTI]

    Minnesota, University of

    : 2011 #12;As a long-time leader in the areas of waste abatement, pollution reduction, energy management Metro Commuter Services Infinity Award ­ in recognition of alternative transportation programs. · 1996 to maintaining impressive and viable alternative transportation programs. TRANSPORTATION SYSTEM DESIGNS

  12. University of Massachusetts Lowell| iSiS Student Self Service My Advising Center iSiSMyAdvisingCenter

    E-Print Network [OSTI]

    Massachusetts at Lowell, University of

    University of Massachusetts Lowell| iSiS Student Self Service ­My Advising Center iSiSMyAdvisingCenter Student Self Service *New* iSiS My Advising Center The University of Massachusetts Lowell has made enhancements to iSiS Student Self Service. You will notice a new `My Advising

  13. Graphene formed on SiC under various environments: Comparison of Si-face and C-face

    E-Print Network [OSTI]

    Feenstra, Randall

    of the Si atoms thereby leaving behind excess C atoms which self- assemble into the graphene. Preparation1 Graphene formed on SiC under various environments: Comparison of Si-face and C-face N. Srivastava Abstract The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra

  14. Quantum modeling of thermoelectric performance of strained Si/Ge/Si superlattices using the nonequilibrium Green's function method

    E-Print Network [OSTI]

    Walker, D. Greg

    Quantum modeling of thermoelectric performance of strained Si/Ge/Si superlattices using 2007 The cross-plane thermoelectric performance of strained Si/Ge/Si superlattices is studied from such that thermoelectric performance is independent of layer thickness between 2 and 4 nm germanium barrier layers

  15. Small-Angle Neutron Scattering Studies of a-Si:H and a-Si:D

    SciTech Connect (OSTI)

    Williamson, D. L.; Marr, D. W. M.; Nelson, B. P.; Iwaniczko, E.; Yang, J.; Yan, B.; Guha, S.

    2000-01-01

    The heterogeneity of hydrogen and deuterium on the nanometer scale has been probed by samll-angle neutron scattering (SANS) from a-Si:H and a-Si:D films. Films were depsoited by two techniques, plasma-enhanced chemical vapor deposition (PECVD) and hot-wire chemical vapor deposition (HWCVD) using conditions that yield high quality films and devices.

  16. Tailored Macroporous SiCN and SiC Structures for High-Temperature Fuel Reforming**

    E-Print Network [OSTI]

    Kenis, Paul J. A.

    Tailored Macroporous SiCN and SiC Structures for High-Temperature Fuel Reforming** By In-Kyung Sung such as the reforming of hydrocarbon fuels (e.g., die- sel or JP-8) into hydrogen for use in portable power sources. Performing heterogeneous catalytic reactions in porous struc- tures at the microscale has certain advantages

  17. Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

    SciTech Connect (OSTI)

    Demiro?lu, D.; Tatar, B.; Kazmanli, K.; Urgen, M.

    2013-12-16

    Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height ?{sub B}, diode ideality factor ? were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.

  18. Ag on Si(111) from basic science to application

    SciTech Connect (OSTI)

    Belianinov, Aleksey

    2012-04-04

    In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-({radical}3x{radical}3)R30{degree}–Ag (Ag-Si-{radical}3 hereafter). In this thesis I systematically e plore effects of Ag deposition on the Ag-Si-{radical}3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

  19. Comparison of the vacuum-ultraviolet radiation response of HfO{sub 2}/SiO{sub 2}/Si dielectric stacks with SiO{sub 2}/Si

    SciTech Connect (OSTI)

    Upadhyaya, G. S.; Shohet, J. L.

    2007-02-12

    Vacuum ultraviolet (vuv) emitted during plasma processing degrades dielectrics by generating electron-hole pairs. VUV-induced charging of SiO{sub 2}/p-Si and HfO{sub 2}/SiO{sub 2}/p-Si dielectric stacks are compared. For SiO{sub 2}/p-Si, charging is observed for photon energies >15 eV by ionization of dielectric atoms from photoinjected electrons. In HfO{sub 2}/SiO{sub 2}/p-Si, charging is observed for photon >10 eV and is due to ionization by photoinjected electrons and by H{sup +} trapping in the HfO{sub 2}/SiO{sub 2} bulk. Hydrogen appears during annealing at the Si-SiO{sub 2} interface forming Si-H, which, during irradiation, is depassivated by photoinjected electrons. The authors conclude that dielectric charging in thin oxides (<10 nm) occurs more easily in HfO{sub 2}/SiO{sub 2} than in SiO{sub 2}.

  20. Direct growth of graphene on Si(111)

    SciTech Connect (OSTI)

    Thanh Trung, Pham Joucken, Frédéric; Colomer, Jean-François; Robert, Sporken; Campos-Delgado, Jessica; Raskin, Jean-Pierre; Hackens, Benoît; Santos, Cristiane N.

    2014-06-14

    Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.

  1. Planetary and meteoritic Mg/Si and d30Si variations inherited from solar nebula chemistry

    E-Print Network [OSTI]

    Dauphas, Nicolas; Burkhardt, Christoph; Kobayashi, Hiroshi; Kurosawa, Kosuke

    2015-01-01

    The bulk chemical compositions of planets are uncertain, even for major elements such as Mg and Si. This is due to the fact that the samples available for study all originate from relatively shallow depths. Comparison of the stable isotope compositions of planets and meteorites can help overcome this limitation. Specifically, the non-chondritic Si isotope composition of the Earth's mantle was interpreted to reflect the presence of Si in the core, which can also explain its low density relative to pure Fe-Ni alloy. However, we have found that angrite meteorites display a heavy Si isotope composition similar to the lunar and terrestrial mantles. Because core formation in the angrite parent-body (APB) occurred under oxidizing conditions at relatively low pressure and temperature, significant incorporation of Si in the core is ruled out as an explanation for this heavy Si isotope signature. Instead, we show that equilibrium isotopic fractionation between gaseous SiO and solid forsterite at 1370 K in the solar neb...

  2. EBS Radionuclide Transport Abstraction

    SciTech Connect (OSTI)

    J. Prouty

    2006-07-14

    The purpose of this report is to develop and analyze the engineered barrier system (EBS) radionuclide transport abstraction model, consistent with Level I and Level II model validation, as identified in Technical Work Plan for: Near-Field Environment and Transport: Engineered Barrier System: Radionuclide Transport Abstraction Model Report Integration (BSC 2005 [DIRS 173617]). The EBS radionuclide transport abstraction (or EBS RT Abstraction) is the conceptual model used in the total system performance assessment (TSPA) to determine the rate of radionuclide releases from the EBS to the unsaturated zone (UZ). The EBS RT Abstraction conceptual model consists of two main components: a flow model and a transport model. Both models are developed mathematically from first principles in order to show explicitly what assumptions, simplifications, and approximations are incorporated into the models used in the TSPA. The flow model defines the pathways for water flow in the EBS and specifies how the flow rate is computed in each pathway. Input to this model includes the seepage flux into a drift. The seepage flux is potentially split by the drip shield, with some (or all) of the flux being diverted by the drip shield and some passing through breaches in the drip shield that might result from corrosion or seismic damage. The flux through drip shield breaches is potentially split by the waste package, with some (or all) of the flux being diverted by the waste package and some passing through waste package breaches that might result from corrosion or seismic damage. Neither the drip shield nor the waste package survives an igneous intrusion, so the flux splitting submodel is not used in the igneous scenario class. The flow model is validated in an independent model validation technical review. The drip shield and waste package flux splitting algorithms are developed and validated using experimental data. The transport model considers advective transport and diffusive transport from a breached waste package. Advective transport occurs when radionuclides that are dissolved or sorbed onto colloids (or both) are carried from the waste package by the portion of the seepage flux that passes through waste package breaches. Diffusive transport occurs as a result of a gradient in radionuclide concentration and may take place while advective transport is also occurring, as well as when no advective transport is occurring. Diffusive transport is addressed in detail because it is the sole means of transport when there is no flow through a waste package, which may dominate during the regulatory compliance period in the nominal and seismic scenarios. The advective transport rate, when it occurs, is generally greater than the diffusive transport rate. Colloid-facilitated advective and diffusive transport is also modeled and is presented in detail in Appendix B of this report.

  3. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    SciTech Connect (OSTI)

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; /UC, Davis; Brau, J.E.; Frey, R.E.; Strom, D.; /Oregon U.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; /SLAC; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  4. Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001)

    SciTech Connect (OSTI)

    Grydlik, Martyna; Groiss, Heiko; Brehm, Moritz; Schaeffler, Friedrich [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz (Austria); Boioli, Francesca; Montalenti, Francesco; Miglio, Leo [L-NESS and Department of Material Science, University of Milano-Bicocca (Italy); Gatti, Riccardo; Devincre, Benoit [LEM, CNRS/ONERA, Chatillon Cedex (France)

    2012-07-02

    We show that suitable pit-patterning of a Si(001) substrate can strongly influence the nucleation and the propagation of dislocations during epitaxial deposition of Si-rich Si{sub 1-x}Ge{sub x} alloys, preferentially gettering misfit segments along pit rows. In particular, for a 250 nm layer deposited by molecular beam epitaxy at x{sub Ge} = 15%, extended film regions appear free of dislocations, by atomic force microscopy, as confirmed by transmission electron microscopy sampling. This result is quite general, as explained by dislocation dynamics simulations, which reveal the key role of the inhomogeneous distribution in stress produced by the pit-patterning.

  5. Regional Transportation Coordination Study 

    E-Print Network [OSTI]

    Golden Crescent Regional Planning Commission

    2006-01-01

    stream_source_info Golden Crescent Regional Transportation Coordination Study.pdf.txt stream_content_type text/plain stream_size 357268 Content-Encoding ISO-8859-1 stream_name Golden Crescent Regional Transportation Coordination... Study.pdf.txt Content-Type text/plain; charset=ISO-8859-1 Golden Crescent Regional Transit i Regional Transportation Coordination Study: 7-County Golden Crescent Region Regional...

  6. FUEL CELLS FOR TRANSPORTATION

    E-Print Network [OSTI]

    for Fuel Cells for Transportation Energy Efficiency and Renewable Energy Office of Transportation............................................................................................. 101 A. R&D of a 50-kW, High-Efficiency, High-Power-Density, CO-Tolerant PEM Fuel Cell Stack SystemFUEL CELLS FOR TRANSPORTATION 2 0 0 1 A N N U A L P R O G R E S S R E P O R T U.S. Department

  7. Spectrally enhancing near-field radiative heat transfer by exciting magnetic polariton in SiC gratings

    E-Print Network [OSTI]

    Yang, Yue

    2015-01-01

    In the present work, we theoretically demonstrate, for the first time, that near field radiative transport between 1D periodic grating microstructures separated by subwavelength vacuum gaps can be significantly enhanced by exciting magnetic resonance or polariton. Fluctuational electrodynamics that incorporates scattering matrix theory with rigorous coupled wave analysis is employed to exactly calculate the near field radiative heat flux between two SiC gratings. Besides the well known coupled surface phonon polaritons (SPhP), an additional spectral radiative heat flux peak, which is due to magnetic polariton, is found within the phonon absorption band of SiC. The mechanisms, behaviors and interplays between magnetic polariton, coupled SPhP, single interface SPhP, and Wood's anomaly in the near field radiative transport are elucidated in detail. The findings will open up a new way to control near field radiative heat transfer by magnetic resonance with micro or nanostructured metamaterials.

  8. Isoscalar giant resonance strength in Si-28 

    E-Print Network [OSTI]

    Youngblood, David H.; Lui, Y. -W; Clark, H. L.

    2007-01-01

    Data taken previously covering the giant resonance region from 9 MeV < E-x < 42 MeV in Si-28 with inelastic scattering of 240 MeV alpha particles at small angles including 0(degrees) have been reanalyzed. Treating all of the observed cross section...

  9. Giant monopole resonance strength in Si-28 

    E-Print Network [OSTI]

    Youngblood, David H.; Clark, HL; Lui, YW.

    1998-01-01

    The giant resonance region in Si-28 was studied with inelastic scattering of 240 MeV alpha particles at small angles including 0 degrees. The giant resonance peak extended from E-x=12 MeV to 35 MeV and E0 strength corresponding to 54 +/- 6...

  10. ELECTROCHEMICAL POWER FOR TRANSPORTATION

    E-Print Network [OSTI]

    Cairns, Elton J.

    2012-01-01

    of the Fuel Cell in Transportation Applications Workshop,practical fuel cell for commercial or consumer applicationfuel cell system engineer- ing is made, vehicle applications

  11. National Transportation Stakeholders Forum

    Office of Environmental Management (EM)

    Nuclear Fuel Grand BC and High-Level Radioactive Waste - Jeff Williams, Director, Nuclear Fuel Storage and Transportation Planning Project, DOEOffice of Nuclear Energy National...

  12. Radioactive Material Transportation Practices

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2002-09-23

    Establishes standard transportation practices for Departmental programs to use in planning and executing offsite shipments of radioactive materials including radioactive waste. Does not cancel other directives.

  13. Transportation Energy Futures Snapshot

    Office of Energy Efficiency and Renewable Energy (EERE)

    This snapshot is a summary of the EERE reports that provide a detailed analysis of opportunities and challenges along the path to a more sustainable transportation energy future.

  14. Transportation and its Infrastructure

    E-Print Network [OSTI]

    2007-01-01

    gas vehicles Annual road tax differentiated by vintageand charges for road transport Tax/pricing measure Optimalannual circulation taxes, tolls and road charges and parking

  15. Transportation Energy Futures

    E-Print Network [OSTI]

    Sperling, Daniel

    1989-01-01

    TRANSPORTATION ment of Oil Shale Technology. Washing- ton,interest and investments in oil shale, ethanol, coal liquidsbiomass materials, coal, oil shale, tar sands, natural gas,

  16. UZ Colloid Transport Model

    SciTech Connect (OSTI)

    M. McGraw

    2000-04-13

    The UZ Colloid Transport model development plan states that the objective of this Analysis/Model Report (AMR) is to document the development of a model for simulating unsaturated colloid transport. This objective includes the following: (1) use of a process level model to evaluate the potential mechanisms for colloid transport at Yucca Mountain; (2) Provide ranges of parameters for significant colloid transport processes to Performance Assessment (PA) for the unsaturated zone (UZ); (3) Provide a basis for development of an abstracted model for use in PA calculations.

  17. Transportation and its Infrastructure

    E-Print Network [OSTI]

    2007-01-01

    of reduction options/ AERO. Ministry of Transport, Publicfrom aviation with the AERO modeling system Part I.from aviation with the AERO modeling system. Montreal,

  18. Natural Gas Transportation Resiliency

    Broader source: Energy.gov (indexed) [DOE]

    Transportation Resiliency Anders Johnson Director Pipeline System Design April 29, 2014 Confidential and Illustrative for discussion purposes only. The views expressed in this...

  19. Transportation Energy Futures Snapshot

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    modes, manage the demand for transportation, and shift the fuel mix to more sustainable sources necessary to reach these significant outcomes. Coordinating a...

  20. WASTE PACKAGE TRANSPORTER DESIGN

    SciTech Connect (OSTI)

    D.C. Weddle; R. Novotny; J. Cron

    1998-09-23

    The purpose of this Design Analysis is to develop preliminary design of the waste package transporter used for waste package (WP) transport and related functions in the subsurface repository. This analysis refines the conceptual design that was started in Phase I of the Viability Assessment. This analysis supports the development of a reliable emplacement concept and a retrieval concept for license application design. The scope of this analysis includes the following activities: (1) Assess features of the transporter design and evaluate alternative design solutions for mechanical components. (2) Develop mechanical equipment details for the transporter. (3) Prepare a preliminary structural evaluation for the transporter. (4) Identify and recommend the equipment design for waste package transport and related functions. (5) Investigate transport equipment interface tolerances. This analysis supports the development of the waste package transporter for the transport, emplacement, and retrieval of packaged radioactive waste forms in the subsurface repository. Once the waste containers are closed and accepted, the packaged radioactive waste forms are termed waste packages (WP). This terminology was finalized as this analysis neared completion; therefore, the term disposal container is used in several references (i.e., the System Description Document (SDD)) (Ref. 5.6). In this analysis and the applicable reference documents, the term ''disposal container'' is synonymous with ''waste package''.

  1. Sustainable Transportation (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-09-01

    This document highlights DOE's Office of Energy Efficiency and Renewable Energy's advancements in transportation technologies, alternative fuels, and fuel cell technologies.

  2. Is light-induced degradation of a-Si:H/c-Si interfaces reversible?

    SciTech Connect (OSTI)

    El Mhamdi, El Mahdi; Holovsky, Jakub; Demaurex, Bénédicte; Ballif, Christophe; De Wolf, Stefaan, E-mail: stefaan.dewolf@epfl.ch [École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Maladière 71, CH-2000 Neuchâtel (Switzerland)

    2014-06-23

    Thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) surfaces are sensitive probes for the bulk electronic properties of a-Si:H. Here, we use such samples during repeated low-temperature annealing and visible-light soaking to investigate the long-term stability of a-Si:H films. We observe that during annealing the electronic improvement of the interfaces follows stretched exponentials as long as hydrogen evolution in the films can be detected. Once such evolution is no longer observed, the electronic improvement occurs much faster. Based on these findings, we discuss how the reversibility of light-induced defects depends on (the lack of observable) hydrogen evolution.

  3. Current Status and Recent Research Achievements in SiC/SiC Composites

    SciTech Connect (OSTI)

    Katoh, Yutai; Snead, Lance L.; Henager, Charles H.; Nozawa, T.; Hinoki, Tetsuya; Ivekovic, Aljaz; Novak, Sasa; Gonzalez de Vicente, Sehila M.

    2014-12-01

    The development and maturation of the silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen the evolution from fundamental development and understanding of the material system and its behavior in a hostile irradiation environment to the current effort which essentially is a broad-based program of technology, directed at moving this material class from a laboratory curiosity to an engineering material. This paper lays out the recent international scientific and technological achievements in the development of SiC/SiC composite material technologies for fusion application and will discuss future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and for general engineering applications.

  4. CALIFORNIA CENTER FOR INNOVATIVE TRANSPORTATION INSTITUTE OF TRANSPORTATION STUDIES

    E-Print Network [OSTI]

    CALIFORNIA CENTER FOR INNOVATIVE TRANSPORTATION INSTITUTE OF TRANSPORTATION STUDIES UNIVERSITY Investigator CCIT Research Report UCB-ITS-CWP-2011-2 The California Center for Innovative Transportation works;CALIFORNIA CENTER FOR INNOVATIVE TRANSPORTATION INSTITUTE OF TRANSPORTATION STUDIES UNIVERSITY OF CALIFORNIA

  5. Electronic structure of Fe{sub 3}Si on Si(100) substrates

    SciTech Connect (OSTI)

    Lal, Chhagan, E-mail: clsaini52@gmail.com [Centre for Non-Conventional Energy Resources, 14-Vigyan Bhavan, University of Rajasthan, Jaipur-302004 (India); Synchrotron S.C.p.A., SS-14 km, 163.5, in Area Science Park, 34149, Basovizza, Trieste (Italy); International Centre for Theoretical Physics (Italy); Di Santo, G.; Caputo, M.; Panighel, M.; Goldoni, A. [Synchrotron S.C.p.A., SS-14 km, 163.5, in Area Science Park, 34149, Basovizza, Trieste (Italy); Taleatu, B. A. [Department of Physics, Obafemi Awolowo University Ile-Ife (Nigeria); Jain, I. P. [Centre for Non-Conventional Energy Resources, 14-Vigyan Bhavan, University of Rajasthan, Jaipur-302004 (India)

    2014-04-24

    The improved performance of large-scale integrated circuits (LSIs) by the shrinking of devices is becoming difficult due to physical limitations. Here we report, the growth and formation of Fe{sub 3}Si on Si(100) and characterized by x-ray photoemission, UV photoemission and low energy electron diffraction to study the electronic structure. The results revealed that the DO{sub 3} phase formation is exist and photoemission results also support the electron diffraction outcome.

  6. Ge-on-Si laser operating at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

  7. Influence of composition and substrate miscut on the evolution of (105)-terminated in-plane Si{sub 1?x}Ge{sub x} quantum wires on Si(001)

    SciTech Connect (OSTI)

    Watzinger, H.; Glaser, M.; Zhang, J. J.; Daruka, I.; Schäffler, F., E-mail: friedrich.schaffler@jku.at [Semiconductor Physics Division, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz (Austria)

    2014-07-01

    Isolated in-plane wires on Si(001) are promising nanostructures for quantum transport applications. They can be fabricated in a catalyst-free process by thermal annealing of self-organized Si{sub 1?x}Ge{sub x} hut clusters. Here, we report on the influence of composition and small substrate miscuts on the unilateral wire growth during annealing at 570?°C. The addition of up to 20% of Si mainly affects the growth kinetics in the presence of energetically favorable sinks for diffusing Ge atoms, but does not significantly change the wire base width. For the investigated substrate miscuts of <0.12°, we find geometry-induced wire tapering, but no strong influence on the wire lengths. Miscuts <0.02° lead to almost perfect quantum wires terminated by virtually step-free (105) and (001) facets over lengths of several 100 nm. Generally, the investigated Si{sub 1?x}Ge{sub x} wires are metastable: Annealing at ?600?°C under otherwise identical conditions leads to the well-known coexistence of Si{sub 1?x}Ge{sub x} pyramids and domes.

  8. Beam energy dependence of charged pion ratio in $^{28}$Si + In reactions

    E-Print Network [OSTI]

    M. Sako; T. Murakami; Y. Nakai; Y. Ichikawa; K. Ieki; S. Imajo; T. Isobe; M. Matsushita; J. Murata; S. Nishimura; H. Sakurai; R. D. Sameshima; E. Takada

    2014-09-11

    The double differential cross sections for $^{nat}$In($^{28}$Si, $\\pi ^{\\pm}$) reactions are measured at 400, 600, and 800 MeV/nucleon. Both $\\pi^+$ and $\\pi^-$ are found to be emitted isotropically from a single moving source. The $\\pi^- / \\pi^+$ yield ratio is determined as a function of the charged pion energy between 25 and 100 MeV. The experimental results significantly differ from the prediction of the standard transport model calculation using the code PHITS. This discrepancy suggests that more theoretical works are required to deduce firm information on the nuclear symmetry energy from the $\\pi^- / \\pi^+$ yield ratio.

  9. Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer

    SciTech Connect (OSTI)

    Chen Peng; Chu, Paul K.; Hoechbauer, T.; Nastasi, M.; Buca, D.; Mantl, S.; Theodore, N. David; Alford, T.L.; Mayer, J.W.; Loo, R.; Caymax, M.; Cai, M.; Lau, S.S. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Los Alamos National Laboratory, Los Alamos, New Mexico, 87545 (United States); Institut fuer Schichten und Grenzflaechen and cni-Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Juelich, D-52425 Juelich (Germany); Advanced Products Research and Development Laboratory, Freescale Semiconductor Incorporated, 2100 East Elliot Road, Tempe, Arizona 85284 (United States); Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287 (United States); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); University of California at San Diego, San Diego, California 92093 (United States)

    2004-11-22

    The use of plasma hydrogenation for relaxed SiGe layer transfer is demonstrated. It is found that the interface of a strain-relaxed SiGe/Si heterostructure is effective in trapping H during plasma hydrogenation. Long microcracks observed at the interface due to the trapping of indiffused H indicate the distinct possibility of transferring the overlayer using the ion-cutting technique. Our results suggest that interfacial defects induced by the He implantation relaxation process trap the indiffusing H atoms and lead to interfacial cracks during hydrogenation or upon postannealing at higher temperatures. It is further noted that trapping of H at the interface is possible only in strain-relaxed structures. Without strain relaxation, H atoms introduced by plasma hydrogenation get trapped just below the sample surface and form a band of shallow platelets. Without the need for high-dose high-energy ion implantation, our results suggest an effective way for high-quality strain-relaxed SiGe layer transfer. The technique has potential for application in the fabrication of SiGe-on-insulator strained Si epitaxial layer and related structures.

  10. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect (OSTI)

    Gatti, E., E-mail: eleonora.gatti@mater.unimib.it; Pezzoli, F.; Grilli, E. [L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 55, I-20125 Milano (Italy); Isa, F.; Chrastina, D.; Isella, G. [L-NESS and Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, I - 22100 Como (Italy); Müller Gubler, E. [Electron Microscopy Center of ETH Zürich (EMEZ), August-Piccard-Hof 1, CH-8093 Zürich (Switzerland)

    2014-07-28

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3??m thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3?×?10{sup 7?}cm{sup ?2} and an interdiffusion layer at the well/barrier interface of 2.1?nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  11. Transportation Todd Litman

    E-Print Network [OSTI]

    consumer cost savings. #12;11 Per Capita Transport EnergyPer Capita Transport Energy 0 0.5 1 1.5 2 2.5 D Problem? · Traffic congestion? · Road construction costs? · Parking congestion or costs? · Excessive costs to consumers? · Government costs? · Traffic crashes? · Lack of mobility for non-drivers? · Poor freight

  12. Expert systems in transportation

    SciTech Connect (OSTI)

    O'Leary, K.P.

    1988-01-01

    The 5 papers in the report deal with the following areas: Knowledge representation and software selection for expert-systems design; Expert-system architecture for retaining-wall design; Development of expert-systems technology in the California Department of Transportation; Development of an expert system to assist in the interactive graphic transit system design process; Expert systems development for contingency transportation planing.

  13. Packaging and Transportation Safety

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2003-04-04

    To establish safety requirements for the proper packaging and transportation of Department of Energy (DOE)/National Nuclear Security Administration (NNSA) offsite shipments and onsite transfers of hazardous materials and for modal transport. Cancels DOE O 460.1A. Canceled by DOE O 460.1C.

  14. Transport Layer Cornell University

    E-Print Network [OSTI]

    Low, Steven H.

    Transport Layer Ao Tang Cornell University Ithaca, NY 14853 Lachlan L. H. Andrew California. Low California Institute of Technology Pasadena, CA 91125 I. INTRODUCTION The Internet has evolved of the physical layer, the link layer, the network layer, the transport layer and the application layer1 . See

  15. TRANSPORTATION ENERGY RESEARCH PIER Transportation Research

    E-Print Network [OSTI]

    . The project also tested a Caterpillar C15 engine certified to 2007 U.S. Environmental Protection Agency.energy.ca.gov/research/ transportation/ January 2011 Heavy-Duty Vehicle Emissions and Fuel Consumption Improvement Illustration of a heavy-duty tractor-trailer modified to meet the SmartWayTM Equipment Standards for lower fuel

  16. Investigation of the physical properties of the tetragonal CeMAl4Si2 (M = Rh, Ir, Pt) compounds

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ghimire, N. J.; Ronning, F.; Williams, D. J.; Scott, B. L.; Luo, Yongkang; Thompson, J. D.; Bauer, E. D.

    2014-12-15

    The synthesis, crystal structure and physical properties studied by means of x-ray diffraction, magnetic, thermal and transport measurements of CeMAl4Si2 (M = Rh, Ir, Pt) are reported, along with the electronic structure calculations for LaMAl4Si2 (M = Rh, Ir, Pt). These materials adopt a tetragonal crystal structure (space group P4/mmm) comprised of BaAl4 blocks, separated by MAl2 units, stacked along the c-axis. Both CeRhAl4Si2 and CeIrAl4Si2 order antiferromagnetically below TN1 = 14 and 16 K, respectively, and undergo a second antiferromagnetic transitition at lower temperature (TN2 = 9 and 14 K, respectively). CePtAl4Si2 orders ferromagnetically below TC = 3 Kmore »with an ordered moment of ?sat = 0.8 ?B for a magnetic field applied perpendicular to the c-axis. Electronic structure calculations reveal quasi-2D character of the Fermi surface.« less

  17. Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

    SciTech Connect (OSTI)

    Ciuk, Tymoteusz [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Cakmakyapan, Semih; Ozbay, Ekmel [Department of Electrical and Electronics Engineering, Department of Physics, Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Caban, Piotr; Grodecki, Kacper; Pasternak, Iwona; Strupinski, Wlodek, E-mail: wlodek.strupinski@itme.edu.pl [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Krajewska, Aleksandra [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Optoelectronics, Military University of Technology, Gen. S. Kaliskiego 2, 00-908 Warsaw (Poland); Szmidt, Jan [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

    2014-09-28

    The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ~10 nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ~190 ??m for step height hS = 10 nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications.

  18. Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*

    E-Print Network [OSTI]

    Bowers, John

    Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

  19. Phonon-energy-coupling enhancement: Strengthening the chemical bonds of the SiO2/Si system

    E-Print Network [OSTI]

    Chen, Zhi

    Phonon-energy-coupling enhancement: Strengthening the chemical bonds of the SiO2/Si system Zhi Chena and Jun Guo Department of Electrical and Computer Engineering and Center for Nanoscale Science

  20. Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

    SciTech Connect (OSTI)

    Tóvári, E.; Csontos, M., E-mail: csontos@dept.phy.bme.hu; Kriváchy, T.; Csonka, S. [Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, Budafoki út 8, H-1111 Budapest (Hungary); Fürjes, P. [MEMS Lab, Institute for Technical Physics and Materials Science, RCNS, HAS, Konkoly-Thege út 29-33, H-1121 Budapest (Hungary)

    2014-09-22

    The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.

  1. STRUCTURAL REQUIREMENTS OF ORGANIC ANION TRANSPORTING POLYPEPTIDE MEDIATED TRANSPORT

    E-Print Network [OSTI]

    Weaver, Yi Miao

    2010-04-12

    The organic anion transporting polypeptides (human: OATP; other: Oatp) form a mammalian transporter superfamily that mediates the transport of structurally unrelated compounds across the cell membrane. Members in this superfamily participate...

  2. Essays on Urban Transportation and Transportation Energy Policy

    E-Print Network [OSTI]

    Kim, Chun Kon

    2008-01-01

    and Transportation Energy Policy Chun Kon Kim University of California,California Goyang, KOREA viii P???????????? ??? W?????? P????? The Impacts of Transportation EnergyCalifornia Transportation Center (UCTC) Regents’ Dissertation Fellowship University of California, Irvine California Energy

  3. Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium

    DOE Patents [OSTI]

    Holland, Orin W. (Oak Ridge, TN); Fathy, Dariush (Knoxville, TN); White, Clark W. (Oak Ridge, TN)

    1990-04-24

    A method for enhancing the conversion of Si to SiO.sub.2 in a directional fashion wherein steam or wet oxidation of Si is enhanced by the prior implantation of Ge into the Si. The unique advantages of the Ge impurity include the directional enhancement of oxidation and the reduction in thermal budget, while at the same time, Ge is an electrically inactive impurity.

  4. Implementing Advances in Transport Security Technologies | Department...

    Office of Environmental Management (EM)

    Implementing Advances in Transport Security Technologies Implementing Advances in Transport Security Technologies Implementing Advances in Transport Security Technologies More...

  5. Transportation Storage Interface | Department of Energy

    Office of Environmental Management (EM)

    Storage Interface Transportation Storage Interface Regulation of Future Extended Storage and Transportation. Transportation Storage Interface More Documents & Publications Gap...

  6. Automated Transportation Logistics and Analysis System (ATLAS...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Packaging and Transportation Automated Transportation Logistics and Analysis System (ATLAS) Automated Transportation Logistics and Analysis System (ATLAS) The Department of...

  7. Charge Relaxation in a Single-Electron Si=SiGe Double Quantum Dot C. Payette,1

    E-Print Network [OSTI]

    Petta, Jason

    relaxation time T1 of a single electron trapped in an accumulation mode Si=SiGe double quantum dot systematically measure the interdot relaxation time T1 of a single electron trapped in a Si DQD as a function- assisted tunneling (PAT) to probe the energy level structure of the single-electron system, demonstrating

  8. Si-based RF MEMS components.

    SciTech Connect (OSTI)

    Stevens, James E.; Nordquist, Christopher Daniel; Baker, Michael Sean; Fleming, James Grant; Stewart, Harold D.; Dyck, Christopher William

    2005-01-01

    Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available in the Microelectronics Development Laboratory (MDL), a Class-1, radiation-hardened CMOS manufacturing facility. We describe novel tungsten and aluminum-based processes, and present results of switches developed in each of these processes. Series and shunt ohmic switches and shunt capacitive switches were successfully demonstrated. The implications of fabricating on high-R Si and suggested future directions for developing low-loss RF MEMS-based circuits are also discussed.

  9. Light-Induced Charge Transport within a Single Asymmetric Nanowire

    SciTech Connect (OSTI)

    Liu, Chong [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Hwang, Yun Yeong [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Jeong, Hoon Eui [Univ. of California, Berkeley, CA (United States); Yang, Peidong [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

    2011-01-21

    Artificial photosynthetic systems using semiconductor materials have been explored for more than three decades in order to store solar energy in chemical fuels such as hydrogen. By mimicking biological photosynthesis with two light-absorbing centers that relay excited electrons in a nanoscopic space, a dual-band gap photoelectrochemical (PEC) system is expected to have higher theoretical energy conversion efficiency than a single band gap system. This work demonstrates the vectorial charge transport of photo-generated electrons and holes within a single asymmetric Si/TiO2 nanowire using Kelvin probe force microscopy (KPFM). Under UV illumination, higher surface potential was observed on the n-TiO? side, relative to the potential of the p-Si side, as a result of majority carriers’ recombination at the Si/TiO? interface. These results demonstrate a new approach to investigate charge separation and transport in a PEC system. This asymmetric nanowire heterostructure, with a dual band gap configuration and simultaneously exposed anode and cathode surfaces represents an ideal platform for the development of technologies for the generation of solar fuels, although better photoanode materials remain to be discovered.

  10. Si Brilliant Technology Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity for LowInformationShoshone County,Si Brilliant Technology Ltd

  11. Transport Services (TAPS) BOF plan

    E-Print Network [OSTI]

    Welzl, Michael

    Transport Services (TAPS) BOF plan T. Moncaster, M. Welzl, D. Ros: dra5-moncaster-tsvwg-transport-services-00 h Reducing Internet Transport Latency Michael Welzl, with help from (alphabe/cal): Anna

  12. Thermodynamic and kinetic control of the lateral Si wire growth

    SciTech Connect (OSTI)

    Dedyulin, Sergey N. Goncharova, Lyudmila V.

    2014-03-24

    Reproducible lateral Si wire growth has been realized on the Si (100) surface. In this paper, we present experimental evidence showing the unique role that carbon plays in initiating lateral growth of Si wires on a Si (100) substrate. Once initiated in the presence of ?5 ML of C, lateral growth can be achieved in the range of temperatures, T?=?450–650?°C, and further controlled by the interplay of the flux of incoming Si atoms with the size and areal density of Au droplets. Critical thermodynamic and kinetic aspects of the growth are discussed in detail.

  13. Improving Efficiency and Equity in Transportation Finance

    E-Print Network [OSTI]

    Watts, Michael

    2006-01-01

    Fueling Transportation Finance. ” Ian W. H. Parry andFueling Transportation Finance. ” Transportation ResearchFueling Transportation Finance: A Primer on the Gas Tax •

  14. Superconnections and Parallel Transport

    E-Print Network [OSTI]

    Dumitrescu, Florin

    2007-01-01

    This note addresses the construction of a notion of parallel transport along superpaths arising from the concept of a superconnection on a vector bundle over a manifold $M$. A superpath in $M$ is, loosely speaking, a path in $M$ together with an odd vector field in $M$ along the path. We also develop a notion of parallel transport associated with a connection (a.k.a. covariant derivative) on a vector bundle over a \\emph{supermanifold} which is a direct generalization of the classical notion of parallel transport for connections over manifolds.

  15. EBS Radionuclide Transport Abstraction

    SciTech Connect (OSTI)

    J.D. Schreiber

    2005-08-25

    The purpose of this report is to develop and analyze the engineered barrier system (EBS) radionuclide transport abstraction model, consistent with Level I and Level II model validation, as identified in ''Technical Work Plan for: Near-Field Environment and Transport: Engineered Barrier System: Radionuclide Transport Abstraction Model Report Integration'' (BSC 2005 [DIRS 173617]). The EBS radionuclide transport abstraction (or EBS RT Abstraction) is the conceptual model used in the total system performance assessment for the license application (TSPA-LA) to determine the rate of radionuclide releases from the EBS to the unsaturated zone (UZ). The EBS RT Abstraction conceptual model consists of two main components: a flow model and a transport model. Both models are developed mathematically from first principles in order to show explicitly what assumptions, simplifications, and approximations are incorporated into the models used in the TSPA-LA. The flow model defines the pathways for water flow in the EBS and specifies how the flow rate is computed in each pathway. Input to this model includes the seepage flux into a drift. The seepage flux is potentially split by the drip shield, with some (or all) of the flux being diverted by the drip shield and some passing through breaches in the drip shield that might result from corrosion or seismic damage. The flux through drip shield breaches is potentially split by the waste package, with some (or all) of the flux being diverted by the waste package and some passing through waste package breaches that might result from corrosion or seismic damage. Neither the drip shield nor the waste package survives an igneous intrusion, so the flux splitting submodel is not used in the igneous scenario class. The flow model is validated in an independent model validation technical review. The drip shield and waste package flux splitting algorithms are developed and validated using experimental data. The transport model considers advective transport and diffusive transport from a breached waste package. Advective transport occurs when radionuclides that are dissolved or sorbed onto colloids (or both) are carried from the waste package by the portion of the seepage flux that passes through waste package breaches. Diffusive transport occurs as a result of a gradient in radionuclide concentration and may take place while advective transport is also occurring, as well as when no advective transport is occurring. Diffusive transport is addressed in detail because it is the sole means of transport when there is no flow through a waste package, which may dominate during the regulatory compliance period in the nominal and seismic scenarios. The advective transport rate, when it occurs, is generally greater than the diffusive transport rate. Colloid-facilitated advective and diffusive transport is also modeled and is presented in detail in Appendix B of this report.

  16. Prediction of Thermal Conductivity for Irradiated SiC/SiC Composites by Informing Continuum Models with Molecular Dynamics Data

    SciTech Connect (OSTI)

    Nguyen, Ba Nghiep; Gao, Fei; Henager, Charles H.; Kurtz, Richard J.

    2014-05-01

    This article proposes a new method to estimate the thermal conductivity of SiC/SiC composites subjected to neutron irradiation. The modeling method bridges different scales from the atomic scale to the scale of a 2D SiC/SiC composite. First, it studies the irradiation-induced point defects in perfect crystalline SiC using molecular dynamics (MD) simulations to compute the defect thermal resistance as a function of vacancy concentration and irradiation dose. The concept of defect thermal resistance is explored explicitly in the MD data using vacancy concentrations and thermal conductivity decrements due to phonon scattering. Point defect-induced swelling for chemical vapor deposited (CVD) SiC as a function of irradiation dose is approximated by scaling the corresponding MD results for perfect crystal ?-SiC to experimental data for CVD-SiC at various temperatures. The computed thermal defect resistance, thermal conductivity as a function of grain size, and definition of defect thermal resistance are used to compute the thermal conductivities of CVD-SiC, isothermal chemical vapor infiltrated (ICVI) SiC and nearly-stoichiometric SiC fibers. The computed fiber and ICVI-SiC matrix thermal conductivities are then used as input for an Eshelby-Mori-Tanaka approach to compute the thermal conductivities of 2D SiC/SiC composites subjected to neutron irradiation within the same irradiation doses. Predicted thermal conductivities for an irradiated Tyranno-SA/ICVI-SiC composite are found to be comparable to available experimental data for a similar composite ICVI-processed with these fibers.

  17. Transportation and Greenhouse Gas Mitigation

    E-Print Network [OSTI]

    Lutsey, Nicholas P.; Sperling, Dan

    2008-01-01

    natural gas and liquefied petroleum gas have continued to make small contributions to transportation,transportation actions include electric power sector actions, eg coal to natural gas

  18. Office of Secure Transportation Activities

    Office of Environmental Management (EM)

    6th, 2012 WIPP Knoxville, TN OFFICE OF SECURE TRANSPORTATION Agency Integration Briefing Our Mission To provide safe and secure ground and air transportation of nuclear weapons,...

  19. Spent Fuel Transportation Risk Assessment

    Office of Environmental Management (EM)

    Spent Fuel Transportation Risk Assessment (SFTRA) Draft NUREG-2125 Overview for National Transportation Stakeholders Forum John Cook Division of Spent Fuel Storage and...

  20. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore »dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  1. Transportation and its Infrastructure

    E-Print Network [OSTI]

    2007-01-01

    IEA personnel (WBCSD, 2004b), the WEO 2004 and Mobility 2030are quite similar. The WEO 2006 (IEA, 2006b) includes higherwhile the IEA’s more recent WEO 2006 projects transport

  2. Optimization of Maritime Transportation

    E-Print Network [OSTI]

    Grossmann, Ignacio E.

    and Technology Management Norwegian University of Science and Technology, Trondheim, Norway Enterprise and D. Ronen (2007). Maritime transportation. Handbooks in Operations Research and Management Science (consolidation in the manufacturing sector, increasing competition, profit margins reduced, mergers and pooling

  3. Accident resistant transport container

    DOE Patents [OSTI]

    Andersen, John A. (Albuquerque, NM); Cole, James K. (Albuquerque, NM)

    1980-01-01

    The invention relates to a container for the safe air transport of plutonium having several intermediate wood layers and a load spreader intermediate an inner container and an outer shell for mitigation of shock during a hypothetical accident.

  4. Transportation Baseline Report

    SciTech Connect (OSTI)

    Fawcett, Ricky Lee; Kramer, George Leroy Jr.

    1999-12-01

    The National Transportation Program 1999 Transportation Baseline Report presents data that form a baseline to enable analysis and planning for future Department of Energy (DOE) Environmental Management (EM) waste and materials transportation. In addition, this Report provides a summary overview of DOE’s projected quantities of waste and materials for transportation. Data presented in this report were gathered as a part of the IPABS Spring 1999 update of the EM Corporate Database and are current as of July 30, 1999. These data were input and compiled using the Analysis and Visualization System (AVS) which is used to update all stream-level components of the EM Corporate Database, as well as TSD System and programmatic risk (disposition barrier) information. Project (PBS) and site-level IPABS data are being collected through the Interim Data Management System (IDMS). The data are presented in appendices to this report.

  5. Atmospheric Transport of Radionuclides

    SciTech Connect (OSTI)

    Crawford, T.V.

    2003-03-03

    The purpose of atmospheric transport and diffusion calculations is to provide estimates of concentration and surface deposition from routine and accidental releases of pollutants to the atmosphere. This paper discusses this topic.

  6. National Transportation Stakeholders Forum

    Office of Environmental Management (EM)

    next webinar is scheduled to occur in June 2013 TRIBAL NATIONS CAUCUS UPDATE WIKI AND NTSF WEB SITES ntsf.wikidot.com www.em.doe.govPagesNationalTransportationForum.aspx...

  7. Transport in granular systems

    E-Print Network [OSTI]

    Wendell, Dawn M. (Dawn Marie), 1983-

    2011-01-01

    There are many situations in which a continuum view of granular systems does not fully capture the relevant mechanics. In order for engineers to be able to design systems for transporting granular materials, there needs ...

  8. Transportation Storage Interface

    Office of Environmental Management (EM)

    in above- ground bunkers, each of which is about the size of a one-car garage. Spent Fuel Storage: Dual Purpose Cask Systems 8 Spent Fuel Storage and Transportation: Framework...

  9. PBA Transportation Websites

    Broader source: Energy.gov [DOE]

    PBA Transportation Websites presented to the DOE Systems Analysis Workshop held in Washington, D.C. July 28-29, 2004 to discuss and define role of systems analysis in DOE Hydrogen Program.

  10. Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces Luxmi, N. Srivastava, Guowei He, and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces Luxmi, N. Srivastava of graphene formed on the ( 1000 ) surface (the C-face) and the (0001) surface (the Si-face) of Si) and low-energy electron microscopy (LEEM). The graphene forms due to preferential sublimation of Si from

  11. Fluid transport container

    DOE Patents [OSTI]

    DeRoos, B.G.; Downing, J.P. Jr.; Neal, M.P.

    1995-11-14

    An improved fluid container for the transport, collection, and dispensing of a sample fluid that maintains the fluid integrity relative to the conditions of the location at which it is taken. More specifically, the invention is a fluid sample transport container that utilizes a fitting for both penetrating and sealing a storage container under controlled conditions. Additionally, the invention allows for the periodic withdrawal of portions of the sample fluid without contamination or intermixing from the environment surrounding the sample container. 13 figs.

  12. Transportation fuels from wood

    SciTech Connect (OSTI)

    Baker, E.G.; Elliott, D.C.; Stevens, D.J.

    1980-01-01

    The various methods of producing transportation fuels from wood are evaluated in this paper. These methods include direct liquefaction schemes such as hydrolysis/fermentation, pyrolysis, and thermochemical liquefaction. Indirect liquefaction techniques involve gasification followed by liquid fuels synthesis such as methanol synthesis or the Fischer-Tropsch synthesis. The cost of transportation fuels produced by the various methods are compared. In addition, three ongoing programs at Pacific Northwest Laboratory dealing with liquid fuels from wood are described.

  13. Si/SiGe electron resonant tunneling diodes with graded spacer wells

    SciTech Connect (OSTI)

    Paul, D. J.; See, P.; Bates, R.; Griffin, N.; Coonan, B. P.; Redmond, G.; Crean, G. M.; Zozoulenko, I. V.; Berggren, K.-F.; Hollander, B.

    2001-06-25

    Resonant tunneling diodes have been fabricated using graded Si{sub 1{minus}x}Ge{sub x} (x=0.3{r_arrow}0.0) spacer wells and strained Si{sub 0.4}Ge{sub 0.6} barriers on a relaxed Si{sub 0.7}Ge{sub 0.3} n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08A/cm{sup 2} with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. {copyright} 2001 American Institute of Physics.

  14. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect (OSTI)

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4?nm in size) in the amorphous matrix of Si{sub 1?x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300?°C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1?x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ?80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  15. Membrane Transport Chloride Transport Across Vesicle and Cell

    E-Print Network [OSTI]

    Smith, Bradley D.

    Membrane Transport Chloride Transport Across Vesicle and Cell Membranes by Steroid-Based Receptors-established that molecules which transport cations across cell membranes (cationophores) can have potent biological effects of biological activity. Indeed, chloride transporters have direct medical potential as treatments for cystic

  16. Parking and Transport Policy Page 1 Parking and Transport Policy

    E-Print Network [OSTI]

    Mucina, Ladislav

    Parking and Transport Policy Page 1 Parking and Transport Policy Category: Facilities, Campus Life 1. PURPOSE To standardise and manage parking and transport on the Curtin Bentley campus including that support both State Government and University objectives in a manner that encourages public transport use

  17. CALIFORNIA CENTER FOR INNOVATIVE TRANSPORTATION INSTITUTE OF TRANSPORTATION STUDIES

    E-Print Network [OSTI]

    CALIFORNIA CENTER FOR INNOVATIVE TRANSPORTATION INSTITUTE OF TRANSPORTATION STUDIES UNIVERSITY-ITS-CWP-2010-4 This work was performed by the California Center for Innovative Transportation, a research group at the University of California, Berkeley, in cooperation with the State of California Business, Transportation

  18. CALIFORNIA CENTER FOR INNOVATIVE TRANSPORTATION INSTITUTE OF TRANSPORTATION STUDIES

    E-Print Network [OSTI]

    CALIFORNIA CENTER FOR INNOVATIVE TRANSPORTATION INSTITUTE OF TRANSPORTATION STUDIES UNIVERSITY-ITS-CWP-2011-6 ISSN 1557-2269 The California Center for Innovative Transportation works with researchers that improve the efficiency, safety, and security of the transportation system. #12;#12;CALIFORNIA CENTER

  19. Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

    E-Print Network [OSTI]

    Rockett, Angus

    from XPS as a function of photoelectron takeoff angle, initially increased rapidly with nitridation either from the higher temperature or from nitridation of all of the Si, leaving the Si3N4 in direct contact with the GaAs. © 1998 American Vacuum Society. S0734-211X 98 00302-3 I. INTRODUCTION Ga

  20. Progress in Solving the Elusive Ag Transport Mechanism in TRISO Coated Particles: What is new?

    SciTech Connect (OSTI)

    Isabella Van Rooyen

    2014-10-01

    The TRISO particle for HTRs has been developed to an advanced state where the coating withstands internal gas pressures and retains fission products during irradiation and under postulated accidents. However, one exception is Ag that has been found to be released from high quality TRISO coated particles when irradiated and can also during high temperature accident heating tests. Although out- of- pile laboratory tests have never hither to been able to demonstrate a diffusion process of Ag in SiC, effective diffusion coefficients have been derived to successfully reproduce measured Ag-110m releases from irradiated HTR fuel elements, compacts and TRISO particles It was found that silver transport through SiC does not proceed via bulk volume diffusion. Presently grain boundary diffusion that may be irradiation enhanced either by neutron bombardment or by the presence of fission products such as Pd, are being investigated. Recent studies of irradiated AGR-1 TRISO fuel using scanning transmission electron microscopy (STEM), transmission kukuchi diffraction (TKD) patterns and high resolution transmission electron microscopy (HRTEM) have been used to further the understanding of Ag transport through TRISO particles. No silver was observed in SiC grains, but Ag was identified at triple-points and grain boundaries of the SiC layer in the TRISO particle. Cadmium was also found in some of the very same triple junctions, but this could be related to silver behavior as Ag-110m decays to Cd-110. Palladium was identified as the main constituent of micron-sized precipitates present at the SiC grain boundaries and in most SiC grain boundaries and the potential role of Pd in the transport of Ag will be discussed.

  1. NREL: Transportation Research - Transportation Deployment Support

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines lightGeospatial ToolkitSMARTSWorking WithSuccess StoriesTransportation

  2. NREL: Transportation Research - Transportation Secure Data Center

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines lightGeospatial ToolkitSMARTSWorking WithSuccessTransportation Secure Data

  3. NREL: Transportation Research - Transportation and Hydrogen Newsletter:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines lightGeospatial ToolkitSMARTSWorking WithSuccessTransportation Secure

  4. NREL: Transportation Research - Transportation and Hydrogen Newsletter:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines lightGeospatial ToolkitSMARTSWorking WithSuccessTransportation

  5. Phonon-assisted transient electroluminescence in Si

    SciTech Connect (OSTI)

    Cheng, Tzu-Huan, E-mail: f94943139@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China); Chu-Su, Yu [Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan and Department of Laboratory Medicine, National Taiwan University Hospital, Taipei, Taiwan (China); Liu, Chien-Sheng [Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, Chii-Wann [Institute of Biomedical Engineering and Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)

    2014-06-30

    The phonon-replica infrared emission is observed at room temperature from indirect band gap Si light-emitting diode under forward bias. With increasing injection current density, the broadened electroluminescence spectrum and band gap reduction are observed due to joule heating. The spectral-resolved temporal response of electroluminescence reveals the competitiveness between single (TO) and dual (TO?+?TA) phonon-assisted indirect band gap transitions. As compared to infrared emission with TO phonon-replica, the retarder of radiative recombination at long wavelength region (?1.2??m) indicates lower transition probability of dual phonon-replica before thermal equivalent.

  6. A=17Si (1993TI07)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeA Better Anode Design to Improve Lithium-Ion1AJ01) (Not93TI07)93TI07)82AJ01) (SeeSi (1993TI07) (Not

  7. Centrotherm SiQ | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd Jump to: navigation,CauveryGas &Centroalcool S A JumpSiQ

  8. Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

    SciTech Connect (OSTI)

    Michon, A.; Vezian, S.; Portail, M.; Ouerghi, A.; Zielinski, M.; Chassagne, T.

    2010-10-25

    We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

  9. Thermal and Electrical Transport in Oxide Heterostructures

    E-Print Network [OSTI]

    Ravichandran, Jayakanth

    2011-01-01

    of thermal conductivity . . . . . . . . . . . . . . . .4.4 Thermal transport in2.3.2 Thermal transport . . . . . . . . . . . . . . . .

  10. First-principles study of the Pd–Si system and Pd(001)/SiC(001) hetero-structure

    SciTech Connect (OSTI)

    Turchi, P.E.A.; Ivashchenko, V.I.

    2014-11-01

    First-principles molecular dynamics simulations of the Pd(001)/3C–SiC(001) nano-layered structure were carried out at different temperatures ranging from 300 to 2100 K. Various PdSi (Pnma, Fm3m, P6m2, Pm3m), Pd2Si (P6?2m, P63/mmc, P3m1, P3?1m) and Pd3Si (Pnma, P6322, Pm3m, I4/mmm) structures under pressure were studied to identify the structure of the Pd/Si and Pd/C interfaces in the Pd/SiC systems at high temperatures. It was found that a large atomic mixing at the Pd/Si interface occurred at 1500–1800 K, whereas the Pd/C interface remained sharp even at the highest temperature of 2100 K. At the Pd/C interface, voids and a graphite-like clustering were detected. Palladium and silicon atoms interact at the Pd/Si interface to mostly form C22-Pd2Si and D011-Pd3Si fragments, in agreement with experiment.

  11. Ultra-high current density thin-film Si diode

    DOE Patents [OSTI]

    Wang; Qi (Littleton, CO)

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  12. Steel-SiC Metal Matrix Composite Development

    SciTech Connect (OSTI)

    Smith, Don D.

    2005-07-17

    The goal of this project is to develop a method for fabricating SiC-reinforced high-strength steel. We are developing a metal-matrix composite (MMC) in which SiC fibers are be embedded within a metal matrix of steel, with adequate interfacial bonding to deliver the full benefit of the tensile strength of the SiC fibers in the composite.

  13. Transport Experiments on 2D Correlated Electron Physics in Semiconductors

    SciTech Connect (OSTI)

    Tsui, Daniel

    2014-03-24

    This research project was designed to investigate experimentally the transport properties of the 2D electrons in Si and GaAs, two prototype semiconductors, in several new physical regimes that were previously inaccessible to experiments. The research focused on the strongly correlated electron physics in the dilute density limit, where the electron potential energy to kinetic energy ratio rs>>1, and on the fractional quantum Hall effect related physics in nuclear demagnetization refrigerator temperature range on samples with new levels of purity and controlled random disorder.

  14. Attoheat transport phenomena

    E-Print Network [OSTI]

    J. Marciak-Kozlowska; M. Pelc; M. A. Kozlowski

    2009-06-09

    Fascinating developments in optical pulse engineering over the last 20 years lead to the generation of laser pulses as short as few femtosecond, providing a unique tool for high resolution time domain spectroscopy. However, a number of the processes in nature evolve with characteristic times of the order of 1 fs or even shorter. Time domain studies of such processes require at first place sub-fs resolution, offered by pulse depicting attosecond localization. The generation, characterization and proof of principle applications of such pulses is the target of the attoscience. In the paper the thermal processes on the attosecond scale are described. The Klein-Gordon and Proca equations are developed. The relativistic effects in the heat transport on nanoscale are discussed. It is shown that the standard Fourier equation can not be valid for the transport phenomena induced by attosecond laser pulses. The heat transport in nanoparticles and nanotubules is investigated.

  15. The novel usage of spectroscopic ellipsometry for the development of amorphous Si solar cells

    E-Print Network [OSTI]

    Park, Byungwoo

    :H/mc-Si:H double junction or a-Si:H/a-SiGe:H/mc-Si:H triple junction are being researched. In the multi-junctionThe novel usage of spectroscopic ellipsometry for the development of amorphous Si solar cells Seung May 2010 Keywords: a-Si:H Thin film Si solar cell Spectroscopic ellipsometry (SE) a b s t r a c t We

  16. Multi-modal Transportation > Highway Transportation > Trucking > Railroad transportation > Public transit > Rural transportation > Rural transit > Freight pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedes

    E-Print Network [OSTI]

    and development > Airport maintenance > Bicycle and pedestrian > Ports and waterways >>> Transportation operat and development > Airport maintenance > Bicycle and pedestrian > Ports and waterways >>> Transportation operations pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedestrian

  17. Synthesis and Characterization of Structured Si-Carbon Nanocomposite...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Si-Carbon Nanocomposite Anodes and Functional Polymer Binders Vehicle Technologies Office Merit Review 2014: High Energy, Long Cycle Life Lithium-ion Batteries for EV Applications...

  18. Hydrogen Evolution at Si-based Metal-Insulator-Semiconductor...

    Office of Scientific and Technical Information (OSTI)

    Hydrogen Evolution at Si-based Metal-Insulator-Semiconductor Photoelectrodes Enhanced by Inversion Channel Charge Collection and Hydrogen Spillover Citation Details In-Document...

  19. HD Applications of Significantly Downsized SI Engines Using Alcohol...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Applications of Significantly Downsized SI Engines Using Alcohol DI for Knock Avoidance Direct injection of a second fuel (ethanol or methanol) is explored as a means of avoiding...

  20. Method for the hydrogenation of poly-si

    DOE Patents [OSTI]

    Wang, Qi

    2013-11-12

    A method for hydrogenating poly-si. Poly-si is placed into the interior of a chamber. A filament is placed into the interior of a chamber. The base pressure of the interior of the chamber is evacuated, preferably to 10.sup.-6 Torr or less. The poly-si is heated for a predetermined poly-si heating time. The filament is heated by providing an electrical power to the filament. Hydrogen is supplied into the pressurized interior of the chamber comprising the heated poly-si and the heated filament. Atomic hydrogen is produced by the filament at a rate whereby the atomic hydrogen surface density at the poly-si is less than the poly-si surface density. Preferably, the poly-si is covered from the atomic hydrogen produced by the heated filament for a first predetermined covering time. Preferably, the poly-si is then uncovered from the atomic hydrogen produced by the heated filament for a first hydrogenation time.

  1. Electrostatic Transfor of Patterned Epitaxial Graphene from SiC...

    Office of Scientific and Technical Information (OSTI)

    Electrostatic Transfor of Patterned Epitaxial Graphene from SiC (001) to Glass. Citation Details In-Document Search Title: Electrostatic Transfor of Patterned Epitaxial Graphene...

  2. Heavy-flavor transport

    E-Print Network [OSTI]

    Andrea Beraudo

    2015-10-29

    The formation of a hot deconfined medium (Quark-Gluon Plasma) in high-energy nuclear collisions affects heavy-flavor observables. In the low/moderate-pT range transport calculations allow one to simulate the propagation of heavy quarks in the plasma and to evaluate the effect of the medium on the final hadronic spectra: results obtained with transport coefficients arising from different theoretical approaches can be compared to experimental data. Finally, a discussion of possible effects on heavy-flavor observables due to the possible formation of a hot-medium in small systems (like in p-A collisions) is presented.

  3. Roughness of the SiC/SiO{sub 2} vicinal interface and atomic structure of the transition layers

    SciTech Connect (OSTI)

    Liu, Peizhi; Li, Guoliang; Duscher, Gerd, E-mail: gduscher@utk.edu [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996 (United States); Sharma, Yogesh K.; Ahyi, Ayayi C.; Isaacs-Smith, Tamara; Williams, John R.; Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-11-01

    The SiC/SiO{sub 2} interface is generally considered to be the cause for the reduced electron mobility of SiC power devices. Previous studies have shown a correlation between the mobility and the transition layer width at the SiC/SiO{sub 2} interface. The authors investigated this interface with atomic resolution Z-contrast imaging and electron energy-loss spectroscopy, and discovered that this transition region was due to the roughness of the vicinal interface. The roughness of a vicinal interface consisted of atomic steps and facets deviating from the ideal off-axis cut plane. The authors conclude that this roughness is limiting the mobility in the channels of SiC MOSFETs.

  4. Deposition of High-Quality a-Si:H by Suppressing Growth of a-Si Clusters in SiH4 Plasmas

    SciTech Connect (OSTI)

    Watanabe, Yukio [Kyushu Electric College, Fukuoka 812-0018 (Japan); Shiratani, Masaharu; Koga, Kazunori [Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 812-8581 (Japan)

    2005-10-31

    The density of Si-particles in a small size range below 10nm (referred to as clusters) in SiH4 capacitively-coupled high-frequency discharges amounts to 1011cm-3 even under deposition conditions of device-quality a-Si:H films. The results reported until now regarding the growth of such clusters are shown to be reasonably understood by taking into account the effects of gas flow on the growth. The Si-H2 bond formation in the a-Si films are found to be mainly contributed by incorporation of large clusters (clusters in a range above about 0.5 nm in size) rather than higher-order-silane (HOS) radicals [SinHx (n<5, x<2n+2)] in the plasma. By employing the cluster-suppressed plasma CVD reactors, the remarkable decrease in Si-H2 bond density in the films is realized, leading to the deposition of a-Si:H films of less light-induced degradation. Based on the knowledge of cluster growth obtained until now, the reactor with a potentiality of high rate deposition of high-quality films is proposed and its preliminary results are presented.

  5. Mass Transport within Soils

    SciTech Connect (OSTI)

    McKone, Thomas E.

    2009-03-01

    Contaminants in soil can impact human health and the environment through a complex web of interactions. Soils exist where the atmosphere, hydrosphere, geosphere, and biosphere converge. Soil is the thin outer zone of the earth's crust that supports rooted plants and is the product of climate and living organisms acting on rock. A true soil is a mixture of air, water, mineral, and organic components. The relative proportions of these components determine the value of the soil for agricultural and for other human uses. These proportions also determine, to a large extent, how a substance added to soil is transported and/or transformed within the soil (Spositio, 2004). In mass-balance models, soil compartments play a major role, functioning both as reservoirs and as the principal media for transport among air, vegetation, surface water, deeper soil, and ground water (Mackay, 2001). Quantifying the mass transport of chemicals within soil and between soil and atmosphere is important for understanding the role soil plays in controlling fate, transport, and exposure to multimedia pollutants. Soils are characteristically heterogeneous. A trench dug into soil typically reveals several horizontal layers having different colors and textures. As illustrated in Figure 1, these multiple layers are often divided into three major horizons: (1) the A horizon, which encompasses the root zone and contains a high concentration of organic matter; (2) the B horizon, which is unsaturated, lies below the roots of most plants, and contains a much lower organic carbon content; and (3) the C horizon, which is the unsaturated zone of weathered parent rock consisting of bedrock, alluvial material, glacial material, and/or soil of an earlier geological period. Below these three horizons lies the saturated zone - a zone that encompasses the area below ground surface in which all interconnected openings within the geologic media are completely filled with water. Similarly to the unsaturated zone with three major horizons, the saturated zone can be further divided into other zones based on hydraulic and geologic conditions. Wetland soils are a special and important class in which near-saturation conditions exist most of the time. When a contaminant is added to or formed in a soil column, there are several mechanisms by which it can be dispersed, transported out of the soil column to other parts of the environment, destroyed, or transformed into some other species. Thus, to evaluate or manage any contaminant introduced to the soil column, one must determine whether and how that substance will (1) remain or accumulate within the soil column, (2) be transported by dispersion or advection within the soil column, (3) be physically, chemically, or biologically transformed within the soil (i.e., by hydrolysis, oxidation, etc.), or (4) be transported out of the soil column to another part of the environment through a cross-media transfer (i.e., volatilization, runoff, ground water infiltration, etc.). These competing processes impact the fate of physical, chemical, or biological contaminants found in soils. In order to capture these mechanisms in mass transfer models, we must develop mass-transfer coefficients (MTCs) specific to soil layers. That is the goal of this chapter. The reader is referred to other chapters in this Handbook that address related transport processes, namely Chapter 13 on bioturbation, Chapter 15 on transport in near-surface geological formations, and Chapter 17 on soil resuspention. This chapter addresses the following issues: the nature of soil pollution, composition of soil, transport processes and transport parameters in soil, transformation processes in soil, mass-balance models, and MTCs in soils. We show that to address vertical heterogeneity in soils in is necessary to define a characteristic scaling depth and use this to establish process-based expressions for soil MTCs. The scaling depth in soil and the corresponding MTCs depend strongly on (1) the composition of the soil and physical state of the soil, (2) the chemical and physic

  6. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

    SciTech Connect (OSTI)

    Henager, Charles H.; Jiang, Weilin

    2014-11-01

    MAX phases, such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti3SiC2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti3SiC2, SiC, and a dual-phase nanocomposite of Ti3SiC2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti3SiC2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti3SiC2 occurs during ion implantation at 873 K. Cs in Ti3SiC2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

  7. Improvement of magnetic and structural stabilities in high-quality Co{sub 2}FeSi{sub 1?x}Al{sub x}/Si heterointerfaces

    SciTech Connect (OSTI)

    Yamada, S.; Tanikawa, K.; Oki, S.; Kawano, M.; Miyao, M.; Hamaya, K.

    2014-08-18

    We study high-quality Co{sub 2}FeSi{sub 1?x}Al{sub x} Heusler compound/Si (0 ? x ? 1) heterointerfaces for silicon (Si)-based spintronic applications. In thermal treatment conditions, the magnetic and structural stabilities of the Co{sub 2}FeSi{sub 1?x}Al{sub x}/Si heterointerfaces are improved with increasing x in Co{sub 2}FeSi{sub 1?x}Al{sub x}. Compared with L2{sub 1}-ordered Co{sub 2}FeSi/Si, B2-ordered Co{sub 2}FeAl/Si can suppress the diffusion of Si atoms into the Heusler-compound structure. This experimental study will provide an important knowledge for applications in Si-based spin transistors with metallic source/drain contacts.

  8. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Thermal and Mechanical Properties

    SciTech Connect (OSTI)

    Henager, Charles H.; Alvine, Kyle J.; Roosendaal, Timothy J.; Shin, Yongsoon; Nguyen, Ba Nghiep; Borlaug, Brennan A.; Jiang, Weilin

    2014-04-01

    SiC-polymers (pure polycarbosilane and polycarbosilane filled with SiC-particles) are being combined with Si and TiC powders to create a new class of polymer-derived ceramics for consideration as advanced nuclear materials in a variety of applications. Compared to pure SiC these materials have increased fracture toughness with only slightly reduced thermal conductivity. Future work with carbon nanotube (CNT) mats will be introduced with the potential to increase the thermal conductivity and the fracture toughness. At present, this report documents the fabrication of a new class of monolithic polymer derived ceramics, SiC + SiC/Ti3SiC2 dual phase materials. The fracture toughness of the dual phase material was measured to be significantly greater than Hexoloy SiC using indentation fracture toughness testing. However, thermal conductivity of the dual phase material was reduced compared to Hexoloy SiC, but was still appreciable, with conductivities in the range of 40 to 60 W/(m K). This report includes synthesis details, optical and scanning electron microscopy images, compositional data, fracture toughness, and thermal conductivity data.

  9. Ceramic Technology Project database: September 1990 summary report. [SiC, SiN, whisker-reinforced SiN, ZrO-toughened aluminas, zirconias, joints

    SciTech Connect (OSTI)

    Keyes, B.L.P.

    1992-06-01

    Data generated within the Ceramic Technology Project (CTP) represent a valuable resource for both research and industry. The CTP database was created to provide easy access to this information in electronic and hardcopy forms by using a computerized database and by issuing periodic hardcopy reports on the database contents. This report is the sixth in a series of semiannual database summaries and covers recent additions to the database, including joined brazed specimen test data. It covers 1 SiC, 34 SiN, 10 whisker-reinforced SiN, 2 zirconia-toughened aluminas, 8 zirconias, and 34 joints.

  10. ADVANCED CUTTINGS TRANSPORT STUDY

    SciTech Connect (OSTI)

    Troy Reed; Stefan Miska; Nicholas Takach; Kaveh Ashenayi; Gerald Kane; Mark Pickell; Len Volk; Mike Volk; Barkim Demirdal; Affonso Lourenco; Evren Ozbayoglu; Paco Vieira

    2000-10-30

    This is the first quarterly progress report for Year 2 of the ACTS project. It includes a review of progress made in Flow Loop development and research during the period of time between July 14, 2000 and September 30, 2000. This report presents information on the following specific tasks: (a) Progress in Advanced Cuttings Transport Facility design and development (Task 2), (b) Progress on research project (Task 8): ''Study of Flow of Synthetic Drilling Fluids Under Elevated Pressure and Temperature Conditions'', (c) Progress on research project (Task 6): ''Study of Cuttings Transport with Foam Under LPAT Conditions (Joint Project with TUDRP)'', (d) Progress on research project (Task 7): ''Study of Cuttings Transport with Aerated Muds Under LPAT Conditions (Joint Project with TUDRP)'', (e) Progress on research project (Task 9): ''Study of Foam Flow Behavior Under EPET Conditions'', (f) Initiate research on project (Task 10): ''Study of Cuttings Transport with Aerated Mud Under Elevated Pressure and Temperature Conditions'', (g) Progress on instrumentation tasks to measure: Cuttings concentration and distribution (Tasks 11), and Foam properties (Task 12), (h) Initiate a comprehensive safety review of all flow-loop components and operational procedures. Since the previous Task 1 has been completed, we will now designate this new task as: (Task 1S). (i) Activities towards technology transfer and developing contacts with Petroleum and service company members, and increasing the number of JIP members.

  11. Spin Transport Shingo Katsumoto

    E-Print Network [OSTI]

    Iye, Yasuhiro

    -1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan According to DARPA's definition, "Spintronics"[1] means "Spin Transport Electronics". The issue "Spin Trans- port" thus covers all the fields of spintronics and one devices. In semiconductor spintronics devices, we therefore utilize the differences in n, , m for up

  12. EPAct Transportation Regulatory Activities

    SciTech Connect (OSTI)

    2011-11-21

    The U.S. Department of Energy's (DOE) Vehicle Technologies Program manages several transportation regulatory activities established by the Energy Policy Act of 1992 (EPAct), as amended by the Energy Conservation Reauthorization Act of 1998, EPAct 2005, and the Energy Independence and Security Act of 2007 (EISA).

  13. Artificial oxygen transport protein

    DOE Patents [OSTI]

    Dutton, P. Leslie

    2014-09-30

    This invention provides heme-containing peptides capable of binding molecular oxygen at room temperature. These compounds may be useful in the absorption of molecular oxygen from molecular oxygen-containing atmospheres. Also included in the invention are methods for treating an oxygen transport deficiency in a mammal.

  14. Storing and transporting energy

    DOE Patents [OSTI]

    McClaine, Andrew W. (Lexington, MA); Brown, Kenneth (Reading, MA)

    2010-09-07

    Among other things, hydrogen is released from water at a first location using energy from a first energy source; the released hydrogen is stored in a metal hydride slurry; and the metal hydride slurry is transported to a second location remote from the first location.

  15. "Educating transportation professionals."

    E-Print Network [OSTI]

    Zhigilei, Leonid V.

    @virginia.edu http://cts.virginia.edu/Demetsky.htm Dept. of Civil and Environmental Engineering University of Virginia Charlottesville, VA 434.924.7464 Transportation Engineering & Management Research Our group works and Operations The mobility of freight is vital to the national economy. The growth in demand for freight

  16. Ionic (Proton) Transport Hydrogen

    E-Print Network [OSTI]

    environments - #12;Technology Options -- Ionic Transport Separation Systems Central, Semi-Central (coal/Semi-Central Systems Coal is the cheapest fuel, but requires the greatest pre-conditioning Clean-up of syngas requires Energy Systems ChevronTexaco SRI Consulting SAIC ChevronTexaco Technology Ventures #12;Performance

  17. Climate Change and Transportation

    E-Print Network [OSTI]

    Minnesota, University of

    1 Climate Change and Transportation Addressing Climate Change in the Absence of Federal Guidelines;6 WSDOT Efforts · Climate Change Team · Project Level GHG Approach · Planning Level GHG Approach · Alternative Fuels Corridor · Recent legislation and research #12;7 WSDOT Efforts: Climate Change Team

  18. Saturated Zone Colloid Transport

    SciTech Connect (OSTI)

    H. S. Viswanathan

    2004-10-07

    This scientific analysis provides retardation factors for colloids transporting in the saturated zone (SZ) and the unsaturated zone (UZ). These retardation factors represent the reversible chemical and physical filtration of colloids in the SZ. The value of the colloid retardation factor, R{sub col} is dependent on several factors, such as colloid size, colloid type, and geochemical conditions (e.g., pH, Eh, and ionic strength). These factors are folded into the distributions of R{sub col} that have been developed from field and experimental data collected under varying geochemical conditions with different colloid types and sizes. Attachment rate constants, k{sub att}, and detachment rate constants, k{sub det}, of colloids to the fracture surface have been measured for the fractured volcanics, and separate R{sub col} uncertainty distributions have been developed for attachment and detachment to clastic material and mineral grains in the alluvium. Radionuclides such as plutonium and americium sorb mostly (90 to 99 percent) irreversibly to colloids (BSC 2004 [DIRS 170025], Section 6.3.3.2). The colloid retardation factors developed in this analysis are needed to simulate the transport of radionuclides that are irreversibly sorbed onto colloids; this transport is discussed in the model report ''Site-Scale Saturated Zone Transport'' (BSC 2004 [DIRS 170036]). Although it is not exclusive to any particular radionuclide release scenario, this scientific analysis especially addresses those scenarios pertaining to evidence from waste-degradation experiments, which indicate that plutonium and americium may be irreversibly attached to colloids for the time scales of interest. A section of this report will also discuss the validity of using microspheres as analogs to colloids in some of the lab and field experiments used to obtain the colloid retardation factors. In addition, a small fraction of colloids travels with the groundwater without any significant retardation. Radionuclides irreversibly sorbed onto this fraction of colloids also transport without retardation. The transport times for these radionuclides will be the same as those for nonsorbing radionuclides. The fraction of nonretarding colloids developed in this analysis report is used in the abstraction of SZ and UZ transport models in support of the total system performance assessment (TSPA) for the license application (LA). This analysis report uses input from two Yucca Mountain Project (YMP) analysis reports. This analysis uses the assumption from ''Waste Form and In-Drift Colloids-Associated Radionuclide Concentrations: Abstraction and Summary'' that plutonium and americium are irreversibly sorbed to colloids generated by the waste degradation processes (BSC 2004 [DIRS 170025]). In addition, interpretations from RELAP analyses from ''Saturated Zone In-Situ Testing'' (BSC 2004 [DIRS 170010]) are used to develop the retardation factor distributions in this analysis.

  19. A Transport Synthetic Acceleration method for transport iterations 

    E-Print Network [OSTI]

    Ramone, Gilles Lionel

    1996-01-01

    We present a family of Transport Synthetic Acceleration (TSA) methods to iteratively solve within-group scattering problems. A single iteration in these schemes consists of a transport sweep followed by a low-order calculation ...

  20. Cluster structures and superdeformation in $^{28}$Si

    E-Print Network [OSTI]

    Yasutaka Taniguchi; Yoshiko Kanada-En'yo; Masaaki Kimura

    2009-10-13

    We have studied positive-parity states of $^{28}$Si using antisymmetrized molecular dynamics (AMD) and multi-configuration mixing (MCM) with constrained variation. Applying constraints to the cluster distance and the quadrupole deformation of the variational calculation, we have obtained basis wave functions that have various structures such as $\\alpha$-$^{24}$Mg and $^{12}$C-$^{16}$O cluster structures as well as deformed structures. Superposing those basis wave functions, we have obtained a oblate ground state band, a $\\beta$ vibration band, a normal-deformed prolate band, and a superdeformed band. It is found that the normal-deformed and superdeformed bands contain large amounts of the $^{12}$C-$^{16}$O and $\\alpha$-$^{24}$Mg cluster components, respectively. The results also suggest the presence of two excited bands with the developed $\\alpha$-$^{24}$Mg cluster structure, where the inter-cluster motion and the $^{24}$Mg-cluster deformation play important roles.

  1. Flex Fuel Optimized SI and HCCI Engine

    SciTech Connect (OSTI)

    Zhu, Guoming; Schock, Harold; Yang, Xiaojian; Huisjen, Andrew; Stuecken, Tom; Moran, Kevin; Zhen, Ron; Zhang, Shupeng

    2013-09-30

    The central objective of the proposed work is to demonstrate an HCCI (homogeneous charge compression ignition) capable SI (spark ignited) engine that is capable of fast and smooth mode transition between SI and HCCI combustion modes. The model-based control technique was used to develop and validate the proposed control strategy for the fast and smooth combustion mode transition based upon the developed control-oriented engine; and an HCCI capable SI engine was designed and constructed using production ready two-step valve-train with electrical variable valve timing actuating system. Finally, smooth combustion mode transition was demonstrated on a metal engine within eight engine cycles. The Chrysler turbocharged 2.0L I4 direct injection engine was selected as the base engine for the project and the engine was modified to fit the two-step valve with electrical variable valve timing actuating system. To develop the model-based control strategy for stable HCCI combustion and smooth combustion mode transition between SI and HCCI combustion, a control-oriented real-time engine model was developed and implemented into the MSU HIL (hardware-in-the-loop) simulation environment. The developed model was used to study the engine actuating system requirement for the smooth and fast combustion mode transition and to develop the proposed mode transition control strategy. Finally, a single cylinder optical engine was designed and fabricated for studying the HCCI combustion characteristics. Optical engine combustion tests were conducted in both SI and HCCI combustion modes and the test results were used to calibrate the developed control-oriented engine model. Intensive GT-Power simulations were conducted to determine the optimal valve lift (high and low) and the cam phasing range. Delphi was selected to be the supplier for the two-step valve-train and Denso to be the electrical variable valve timing system supplier. A test bench was constructed to develop control strategies for the electrical variable valve timing (VVT) actuating system and satisfactory electrical VVT responses were obtained. Target engine control system was designed and fabricated at MSU for both single-cylinder optical and multi-cylinder metal engines. Finally, the developed control-oriented engine model was successfully implemented into the HIL simulation environment. The Chrysler 2.0L I4 DI engine was modified to fit the two-step vale with electrical variable valve timing actuating system. A used prototype engine was used as the base engine and the cylinder head was modified for the two-step valve with electrical VVT actuating system. Engine validation tests indicated that cylinder #3 has very high blow-by and it cannot be reduced with new pistons and rings. Due to the time constraint, it was decided to convert the four-cylinder engine into a single cylinder engine by blocking both intake and exhaust ports of the unused cylinders. The model-based combustion mode transition control algorithm was developed in the MSU HIL simulation environment and the Simulink based control strategy was implemented into the target engine controller. With both single-cylinder metal engine and control strategy ready, stable HCCI combustion was achived with COV of 2.1% Motoring tests were conducted to validate the actuator transient operations including valve lift, electrical variable valve timing, electronic throttle, multiple spark and injection controls. After the actuator operations were confirmed, 15-cycle smooth combustion mode transition from SI to HCCI combustion was achieved; and fast 8-cycle smooth combustion mode transition followed. With a fast electrical variable valve timing actuator, the number of engine cycles required for mode transition can be reduced down to five. It was also found that the combustion mode transition is sensitive to the charge air and engine coolant temperatures and regulating the corresponding temperatures to the target levels during the combustion mode transition is the key for a smooth combustion mode transition. As a summary, the proposed combust

  2. 35 Alternative Transportation Fuels in California ALTERNATIVE TRANSPORTATION

    E-Print Network [OSTI]

    potential means for diversifying an energy resource base for the transportation sector. Largely as a result, there is a potential for the entrance of an estimated one million alternative fuel vehicles (AFVs) into the California35 Alternative Transportation Fuels in California Chapter 4 ALTERNATIVE TRANSPORTATION FUELS

  3. Si?-implanted Si-wire waveguide photodetectors for the mid-infrared

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Souhan, Brian; Lu, Ming; Grote, Richard R.; Chen, Christine P.; Huang, Hsu-Cheng; Driscoll, Jeffrey B.; Stein, Aaron; Bakhru, Hassaram; Bergman, Keren; Green, William M. J.; et al

    2014-10-28

    CMOS-compatible Si?-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 – 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz formore »a wavelength of ? = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.« less

  4. Charge Relaxation in a Single Electron Si/SiGe Double Quantum Dot

    E-Print Network [OSTI]

    K. Wang; C. Payette; Y. Dovzhenko; P. W. Deelman; J. R. Petta

    2013-04-15

    We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals the presence of a low lying excited state. We systematically measure T_1 as a function of detuning and interdot tunnel coupling and show that it is tunable over four orders of magnitude, with a maximum of 45 microseconds for our device configuration. Measured relaxation times are consistent with a phonon mediated energy relaxation process and indicate that low lying excited states may have important implications in the development of silicon spin qubits.

  5. Si?-implanted Si-wire waveguide photodetectors for the mid-infrared

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Souhan, Brian [Columbia Univ., New York, NY (United States); Lu, Ming [Brookhaven National Lab. (BNL), Upton, NY (United States); Grote, Richard R. [Columbia Univ., New York, NY (United States); Chen, Christine P. [Columbia Univ., New York, NY (United States); Huang, Hsu-Cheng [Columbia Univ., New York, NY (United States); Driscoll, Jeffrey B. [Columbia Univ., New York, NY (United States); Stein, Aaron [Brookhaven National Lab. (BNL), Upton, NY (United States); Bakhru, Hassaram [State Univ. of New York at Albany, Albany, NY (United States); Bergman, Keren [Columbia Univ., New York, NY (United States); Green, William M. J. [IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center; Osgood, Jr., Richard M. [Columbia Univ., New York, NY (United States)

    2014-01-01

    CMOS-compatible Si?-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 – 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of ? = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.

  6. Modeling the plastic relaxation onset in realistic SiGe islands on Si(001)

    SciTech Connect (OSTI)

    Gatti, R.; Marzegalli, A.; Montalenti, F.; Miglio, Leo [Dipartimento di Scienza dei Materiali and L-NESS, Universita degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano (Italy); Zinovyev, V. A. [Institute of Semiconductor Physics, Novosibirsk 630090 (Russian Federation)

    2008-11-01

    A detailed investigation of plastic relaxation onset in heteroepitaxial SiGe islands on Si(001) is presented. The strain field induced by a straight misfit-dislocation segment is modeled by finite-element-method (FEM) calculations in three dimensions, fully taking into account the interaction with the multifaceted free surfaces of realistic islands. The total elastic energies before and after the placement of a 60 deg. dislocation segment in the most favorable position are therefore evaluated by a full FEM approach, for different island sizes and compositions. The critical volumes with composition for inserting the dislocation are finally obtained and successfully compared with the data in a report by Marzegalli et al. [Phys. Rev. Lett. 99, 235505 (2007)], where experimental values are compared to a simpler approach.

  7. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

    SciTech Connect (OSTI)

    Ye, Han Yu, Zhongyuan

    2014-11-15

    Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  8. Band-engineered Ge-on-Si lasers

    E-Print Network [OSTI]

    Liu, Jifeng

    We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between ...

  9. NUCLEATION PHENOMENON IN SiC PARTICULATE REINFORCED MAGNESIUM COMPOSITE

    E-Print Network [OSTI]

    Zhou, Wei

    ) and grain refinement were observed in sand cast SiCp/Mg(AZ91) [7] and SiCp/Mg(ZCM630) composites [8 Avenue, Singapore 639798 (Received May 5, 1999) (Accepted June 24, 1999) Keywords: Casting; Nucleation performance of matrix metals and alloys. Most magnesium alloy based MMCs are produced via a casting process

  10. Superconductivity in gallium-substituted Ba8Si46 clathrates 

    E-Print Network [OSTI]

    Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

    2007-01-01

    We report a joint experimental and theoretical investigation of superconductivity in Ga-substituted type-I silicon clathrates. We prepared samples of the general formula Ba8Si46-xGax, with different values of x. We show that Ba8Si40Ga6 is a bulk...

  11. The role of lattice excitation in Si etching

    E-Print Network [OSTI]

    Blair, Michael Ryan

    2014-01-01

    The chemistries of fluorine, F?, and xenon difluoride, XeF?, with clean Si are basically the same, while their chemistries diverge dramatically past I ML F coverage. With a clean Si surface, F? and XeF? react utilizing an ...

  12. RNA Interference: Endogenous siRNAs Derived from Transposable

    E-Print Network [OSTI]

    Jiggins, Francis

    RNA Interference: Endogenous siRNAs Derived from Transposable Elements The Piwi-interacting RNARNAs are about 22 nt long, are derived from host-expressed fold-back structures, and associate primarily with Ago1 [5]. Conversely, antiviral siRNAs (viRNAs), are about 21 nt, are derived from double

  13. Integrated transportation system design optimization

    E-Print Network [OSTI]

    Taylor, Christine P. (Christine Pia), 1979-

    2007-01-01

    Traditionally, the design of a transportation system has focused on either the vehicle design or the network flow, assuming the other as given. However, to define a system level architecture for a transportation system, ...

  14. Hot metal Si control at Kwangyang blast furnaces

    SciTech Connect (OSTI)

    Hur, N.S.; Cho, B.R.; Kim, G.Y.; Choi, J.S.; Kim, B.H. [POSCO, Cheollanamdo (Korea, Republic of). Kwangyang Works

    1995-12-01

    Studies of Si transfer in blast furnaces have shown that the Si level in pig iron is influenced more by the reaction of silicon oxide gas generation in the raceway than the chemical reaction between hot metal and slag at the drop zone. Specifications require a Si content of pig iron below 0.15% at the Kwangyang Works, but the use of soft coking coal in the blend for coke ovens, high pulverized coal injection rate into the blast furnace, and the application of lower grade iron ore has resulted in the need to develop methods to control Si in hot metal. In this paper, the results of in furnace Si control and the desiliconization skills at the casthouse floor are described.

  15. Mechanistic Selection and Growth of Twinned Bicrystalline Primary Si in Near Eutectic Al-Si Alloys

    SciTech Connect (OSTI)

    Choonho Jung

    2006-12-12

    Morphological evolution and selection of angular primary silicon is investigated in near-eutectic Al-Si alloys. Angular silicon arrays are grown directionally in a Bridgman furnace at velocities in the regime of 10{sup -3} m/sec and with a temperature gradient of 7.5 x 10{sup 3} K/m. Under these conditions, the primary Si phase grows as an array of twinned bicrystalline dendrites, where the twinning gives rise to a characteristic 8-pointed star-shaped primary morphology. While this primary Si remains largely faceted at the growth front, a complex structure of coherent symmetric twin boundaries enables various adjustment mechanisms which operate to optimize the characteristic spacings within the primary array. In the work presented here, this primary silicon growth morphology is examined in detail. In particular, this thesis describes the investigation of: (1) morphological selection of the twinned bicrystalline primary starshape morphology; (2) primary array behavior, including the lateral propagation of the starshape grains and the associated evolution of a strong <100> texture; (3) the detailed structure of the 8-pointed star-shaped primary morphology, including the twin boundary configuration within the central core; (4) the mechanisms of lateral propagation and spacing adjustment during array evolution; and (5) the thermosolutal conditions (i.e. operating state) at the primary growth front, including composition and phase fraction in the vicinity of the primary tip.

  16. On the Origin of the Second-Order Nonlinearity in Strained Si-SiN Structures

    E-Print Network [OSTI]

    Khurgin, Jacob B; Pruessner, Marcel W; Rabinovich, William S

    2015-01-01

    The development of efficient low-loss electro-optic and nonlinear components based on silicon or its related compounds, such as nitrides and oxides, is expected to dramatically enhance silicon photonics by eliminating the need for non-CMOS-compatible materials. While bulk Si is centrosymmetric and thus displays no second-order (\\c{hi}(2)) effects, a body of experimental evidence accumulated in the last decade demonstrates that when a strain gradient is present, a significant \\c{hi}(2) and Pockels coefficient can be observed. In this work we connect a strain-gradient-induced \\c{hi}(2) with another strain-gradient-induced phenomenon, the flexoelectric effect. We show that even in the presence of an extremely strong strain gradient, the degree by which a nonpolar material like Si can be altered cannot possibly explain the order of magnitude of observed chi^(2) phenomena. At the same time, in a polar material like SiN, each bond has a large nonlinear polarizability, so when the inversion symmetry is broken by a s...

  17. Transport Properties of Bilayer Graphene Nanoribbons

    E-Print Network [OSTI]

    Wang, Minsheng

    2013-01-01

    Electrical spin injection and transport in germanium”. Phys.P. , Temperature- Dependent Transport in Suspended Graphene.Y. M. , Quantum Transport: Introduction to Nanoscience.

  18. Contaminant Transport in the Southern California Bight

    E-Print Network [OSTI]

    Idica, Eileen Y.

    2010-01-01

    1987). The California Current transports Pacific Subarctic1987). The California Current transports Pacific Subarcticthe dynamics and transport of Southern California stormwater

  19. Scale Up of Si/Si0.8GE0.2 and B4C/B9C Superlattices for Harvesting...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Scale Up of SiSi0.8GE0.2 and B4CB9C Superlattices for Harvesting of Waste Heat in Diesel Engines Scale Up of SiSi0.8GE0.2 and B4CB9C Superlattices for Harvesting of Waste Heat...

  20. Things to do early in the semester 1. Allow your SI Leader surveys class for the most popular times, schedule SI sessions

    E-Print Network [OSTI]

    Kasman, Alex

    questions on a real exam. This increases student interest in and relevancy of SI rapidly. 17. Attach an SI promotional page (or sticky note) encouraging students to go to SI to student exams1 Things to do early in the semester 1. Allow your SI Leader surveys class for the most popular

  1. Electromagnetic dissociation of relativistic {sup 28}Si by nucleon emission

    SciTech Connect (OSTI)

    Sonnadara, U.J.

    1992-12-01

    A detailed study of the electromagnetic dissociation of {sup 28}Si by nucleon emission at E{sub lab}/A = 14.6 (GeV/nucleon was carried out with {sup 28}Si beams interacting on {sup 208}Pb). {sup 120}Sn. {sup 64}C targets. The measurements apparatus consists of detectors in the target area which measure the energy and charged multiplicity, and a forward spectrometer which measures the position, momentum and energy of the reaction fragments. The exclusive electromagnetic dissociation cross sections for decay channels having multiple nucleons in the final state have been measured which enables the selection of events produced in pure electromagnetic interactions. The measured cross sections agree well with previous measurements obtained for the removal of a few nucleons as well as with measurements on total charge removal cross sections from other experiments. The dependence of the integrated cross sections on the target charge Z{sub T} and the target mass AT confirms that for higher Z targets the excitation is largely electromagnetic. Direct measurements of the excitation energy for the electromagnetic dissociation of {sup 28}Si {yields} p+{sup 27}Al and {sup 28}Si {yields} n+{sup 27}Si have been obtained through a calculation of the invariant mass in kinematically, reconstructed events. The excitation energy spectrum for all targets peak near the isovector giant dipole resonance in {sup 28}Si. These distributions are well reproduced by combining the photon spectrum calculated using the Weizsaecker-Williams approximation with the experimental data on the photonuclear {sup 28}Si({sub {gamma},p}){sup 27}Al and {sup 28}Si({sub {gamma},n}){sup 27}Si. The possibilities of observing double giant dipole resonance excitations in {sup 28}Si have been investigated with cross section measurements as well as with excitation energy reconstruction.

  2. Electromagnetic dissociation of relativistic [sup 28]Si by nucleon emission

    SciTech Connect (OSTI)

    Sonnadara, U.J.

    1992-12-01

    A detailed study of the electromagnetic dissociation of [sup 28]Si by nucleon emission at E[sub lab]/A = 14.6 (GeV/nucleon was carried out with [sup 28]Si beams interacting on [sup 208]Pb). [sup 120]Sn. [sup 64]C targets. The measurements apparatus consists of detectors in the target area which measure the energy and charged multiplicity, and a forward spectrometer which measures the position, momentum and energy of the reaction fragments. The exclusive electromagnetic dissociation cross sections for decay channels having multiple nucleons in the final state have been measured which enables the selection of events produced in pure electromagnetic interactions. The measured cross sections agree well with previous measurements obtained for the removal of a few nucleons as well as with measurements on total charge removal cross sections from other experiments. The dependence of the integrated cross sections on the target charge Z[sub T] and the target mass AT confirms that for higher Z targets the excitation is largely electromagnetic. Direct measurements of the excitation energy for the electromagnetic dissociation of [sup 28]Si [yields] p+[sup 27]Al and [sup 28]Si [yields] n+[sup 27]Si have been obtained through a calculation of the invariant mass in kinematically, reconstructed events. The excitation energy spectrum for all targets peak near the isovector giant dipole resonance in [sup 28]Si. These distributions are well reproduced by combining the photon spectrum calculated using the Weizsaecker-Williams approximation with the experimental data on the photonuclear [sup 28]Si([sub [gamma],p])[sup 27]Al and [sup 28]Si([sub [gamma],n])[sup 27]Si. The possibilities of observing double giant dipole resonance excitations in [sup 28]Si have been investigated with cross section measurements as well as with excitation energy reconstruction.

  3. Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si=SiGe

    E-Print Network [OSTI]

    beyond the expected limitation forecasted by the International Technology Roadmap for Semiconduc- tors:1:100). The combination of HBr process gas and very low substrate bias power (10 W) for inductively coupled plasma- junction bipolar transistors (HBT) make Si-based RITDs excellent candidates to extend the Si technology

  4. Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions

    E-Print Network [OSTI]

    Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions of Technology Cambridge, Massachusetts 02139 ABSTRACT Advanced CMOS substrates composed of ultra-thin strained-Cut), involves hydrogen implantation prior to wafer bonding, followed by annealing to cause delamination and

  5. FIRING STABILITY OF SiNy / SiNx SURFACE PASSIVATION STACKS FOR CRYSTALLINE SILICON SOLAR CELLS

    E-Print Network [OSTI]

    FIRING STABILITY OF SiNy / SiNx SURFACE PASSIVATION STACKS FOR CRYSTALLINE SILICON SOLAR CELLS S of solar cells using p-type boron-doped Cz- and FZ-silicon wafers. After local laser ablation of the dielectrics and full-area metallization of the rear we achieve energy conversion efficiencies up to 19

  6. Size Effect of SiC Particle on Microstructures and Mechanical Properties of SiCp/Al Composites

    E-Print Network [OSTI]

    Qin, Qinghua

    matrix composites reinforced with ceramic particles have some attractive properties such as high strengthCp/Al composites were fabricated using aluminum alloy ZL101 as the matrix material, and SiC particles a composite is stretched, most of external load transfers from soft Al matrix to hard SiCp reinforcement

  7. Transforming California's Freight Transport System

    E-Print Network [OSTI]

    California at Davis, University of

    Transforming California's Freight Transport System Policy Forum on the Role of Freight Transport in Achieving Clean Air, Climate Goals, Economic Growth and Healthy Communities in California Jack Kitowski April 19, 2013 1 #12;Freight Impacts at Many Levels 2 #12;Freight Transport Today: Contribution

  8. Parallel Transports in Webs

    E-Print Network [OSTI]

    Christian Fleischhack

    2003-07-17

    For connected reductive linear algebraic structure groups it is proven that every web is holonomically isolated. The possible tuples of parallel transports in a web form a Lie subgroup of the corresponding power of the structure group. This Lie subgroup is explicitly calculated and turns out to be independent of the chosen local trivializations. Moreover, explicit necessary and sufficient criteria for the holonomical independence of webs are derived. The results above can even be sharpened: Given an arbitrary neighbourhood of the base points of a web, then this neighbourhood contains some segments of the web whose parameter intervals coincide, but do not include 0 (that corresponds to the base points of the web), and whose parallel transports already form the same Lie subgroup as those of the full web do.

  9. Fuel cell water transport

    DOE Patents [OSTI]

    Vanderborgh, Nicholas E. (Los Alamos, NM); Hedstrom, James C. (Los Alamos, NM)

    1990-01-01

    The moisture content and temperature of hydrogen and oxygen gases is regulated throughout traverse of the gases in a fuel cell incorporating a solid polymer membrane. At least one of the gases traverses a first flow field adjacent the solid polymer membrane, where chemical reactions occur to generate an electrical current. A second flow field is located sequential with the first flow field and incorporates a membrane for effective water transport. A control fluid is then circulated adjacent the second membrane on the face opposite the fuel cell gas wherein moisture is either transported from the control fluid to humidify a fuel gas, e.g., hydrogen, or to the control fluid to prevent excess water buildup in the oxidizer gas, e.g., oxygen. Evaporation of water into the control gas and the control gas temperature act to control the fuel cell gas temperatures throughout the traverse of the fuel cell by the gases.

  10. Rail transportation update

    SciTech Connect (OSTI)

    Buchsbaum, L.

    2009-01-15

    Record western coal shipments and lucrative export traffic lead America's railroad to their fourth most profitable year in history. But with the coal boom going bust, higher rates, and a new administration and congress, what sort of transportation year can coal mines and shippers expect in 2009? The article gives the opinions of company executives and discusses findings of the recent so-called Christenson Report which investigated growing railroad market power. 1 ref., 1 fig.

  11. Analysis of ballistic transport in nanoscale devices by using an accelerated finite element contact block reduction approach

    SciTech Connect (OSTI)

    Li, H.; Li, G., E-mail: gli@clemson.edu [College of Engineering and Science, Clemson University, Clemson, South Carolina 29634-0921 (United States)

    2014-08-28

    An accelerated Finite Element Contact Block Reduction (FECBR) approach is presented for computational analysis of ballistic transport in nanoscale electronic devices with arbitrary geometry and unstructured mesh. Finite element formulation is developed for the theoretical CBR/Poisson model. The FECBR approach is accelerated through eigen-pair reduction, lead mode space projection, and component mode synthesis techniques. The accelerated FECBR is applied to perform quantum mechanical ballistic transport analysis of a DG-MOSFET with taper-shaped extensions and a DG-MOSFET with Si/SiO{sub 2} interface roughness. The computed electrical transport properties of the devices obtained from the accelerated FECBR approach and associated computational cost as a function of system degrees of freedom are compared with those obtained from the original CBR and direct inversion methods. The performance of the accelerated FECBR in both its accuracy and efficiency is demonstrated.

  12. Tuning the Magnetic and Electronic Properties of FexSi1-x Thin Films for Spintronics

    E-Print Network [OSTI]

    Karel, Julie Elizabeth

    2012-01-01

    x Si 1-x Thin Films for Spintronics By Julie Elizabeth Karelx Si 1-x Thin Films for Spintronics Copyright 2012 by Juliex Si 1-x Thin Films for Spintronics by Julie Elizabeth Karel

  13. BD, Seconda prova di verifica, del 20/12/2013 1. Si consideri il seguente schema

    E-Print Network [OSTI]

    Albano, Antonio

    ) Si disegni un albero fisico efficiente per la stessa interrogazione che non faccia uso di indici. Si assuma che Studenti sia ordinata rispetto a IdStudente. (c) Si disegni un albero fisico efficiente per la

  14. A New SiC-based DPF for the Automotive Industry | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    A New SiC-based DPF for the Automotive Industry A New SiC-based DPF for the Automotive Industry Evaluation and example of performance of a new SiC-based diesel particulate filter...

  15. Mohr, Nishimata, Behenna, and Stoltz: Catalytic Enantioselective Decarboxylative Protonation SI 1 Supporting Information for

    E-Print Network [OSTI]

    Stoltz, Brian M.

    for the Determination of Enantiomeric Excess SI 14 Deuterium Labeling Experiments SI 15 References SI 16 #12;Mohr argon. Brine solutions are saturated aqueous sodium chloride solutions. Palladium(II) acetate (Pd(OAc)2

  16. Comparison of majority carrier charge transfer velocities at Si/polymer and Si/metal photovoltaic heterojunctions

    SciTech Connect (OSTI)

    Price, Michelle J.; Foley, Justin M. [Applied Physics Program, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109-1040 (United States); May, Robert A. [Department of Chemistry and Biochemistry, University of Texas at Austin, 1 University Station A5300, Austin, Texas 78712-0165 (United States); Maldonado, Stephen [Applied Physics Program, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109-1040 (United States); Department of Chemistry, University of Michigan, 930 N University, Ann Arbor, Michigan 48109-1055 (United States)

    2010-08-23

    Two sets of silicon (Si) heterojunctions with either Au or PEDOT:PSS contacts have been prepared to compare interfacial majority carrier charge transfer processes at Si/metal and Si/polymer heterojunctions. Current-voltage (J-V) responses at a range of temperatures, wavelength-dependent internal quantum yields, and steady-state J-V responses under illumination for these devices are reported. The cumulative data suggest that the velocity of majority carrier charge transfer, v{sub n}, is several orders of magnitude smaller at n-Si/PEDOT:PSS contacts than at n-Si/Au junctions, resulting in superior photoresponse characteristics for these inorganic/organic heterojunctions.

  17. Multiscale thermal transport.

    SciTech Connect (OSTI)

    Graham, Samuel Jr. (; .); Wong, C. C.; Piekos, Edward Stanley

    2004-02-01

    A concurrent computational and experimental investigation of thermal transport is performed with the goal of improving understanding of, and predictive capability for, thermal transport in microdevices. The computational component involves Monte Carlo simulation of phonon transport. In these simulations, all acoustic modes are included and their properties are drawn from a realistic dispersion relation. Phonon-phonon and phonon-boundary scattering events are treated independently. A new set of phonon-phonon scattering coefficients are proposed that reflect the elimination of assumptions present in earlier analytical work from the simulation. The experimental component involves steady-state measurement of thermal conductivity on silicon films as thin as 340nm at a range of temperatures. Agreement between the experiment and simulation on single-crystal silicon thin films is excellent, Agreement for polycrystalline films is promising, but significant work remains to be done before predictions can be made confidently. Knowledge gained from these efforts was used to construct improved semiclassical models with the goal of representing microscale effects in existing macroscale codes in a computationally efficient manner.

  18. Transportation of medical isotopes

    SciTech Connect (OSTI)

    Nielsen, D.L.

    1997-11-19

    A Draft Technical Information Document (HNF-1855) is being prepared to evaluate proposed interim tritium and medical isotope production at the Fast Flux Test Facility (FFTF). This assessment examines the potential health and safety impacts of transportation operations associated with the production of medical isotopes. Incident-free and accidental impacts are assessed using bounding source terms for the shipment of nonradiological target materials to the Hanford Site, the shipment of irradiated targets from the FFTF to the 325 Building, and the shipment of medical isotope products from the 325 Building to medical distributors. The health and safety consequences to workers and the public from the incident-free transportation of targets and isotope products would be within acceptable levels. For transportation accidents, risks to works and the public also would be within acceptable levels. This assessment is based on best information available at this time. As the medical isotope program matures, this analysis will be revised, if necessary, to support development of a final revision to the Technical Information Document.

  19. Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen* and D. K. Saldin

    E-Print Network [OSTI]

    Saldin, Dilano

    Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen quantitatively the geometry of mixed Ge-Si dimers on a single domain Si 001 2 1 surface by azimuthal scanning core-level photoelectron diffraction. By analyzing Ge 3d diffraction patterns from Ge/Si 001 at 0.1 ML

  20. a-Si:H-based Triple-Juncti of 10 A/s usi

    E-Print Network [OSTI]

    Deng, Xunming

    :H/a.-SiGe:H/a-SiGe:H triple- junction s'olar cells is presently being studlied with the ultimate goal of preparing high. EXPERIMENTAL The a-Si:H/a-SiGe:H/a-SiGe:H triple-junction solar ceil structures were fabricated usingGe:H/a-SiGe:H triple-junction ceils have been fabricated and initial active area AM1.5 efficiencies of 11% (total area

  1. Transportation Energy Futures Analysis Snapshot

    Broader source: Energy.gov [DOE]

    Transportation currently accounts for 71% of total U.S. petroleum use and 33% of the nation's total carbon emissions. The TEF project explores how combining multiple strategies could reduce GHG emissions and petroleum use by 80%. Researchers examined four key areas – lightduty vehicles, non-light-duty vehicles, fuels, and transportation demand – in the context of the marketplace, consumer behavior, industry capabilities, technology and the energy and transportation infrastructure. The TEF reports support DOE long-term planning. The reports provide analysis to inform decisions about transportation energy research investments, as well as the role of advanced transportation energy technologies and systems in the development of new physical, strategic, and policy alternatives.

  2. Bifacial Si Heterojunction-Perovskite Organic-Inorganic Tandem to Produce Highly Efficient Solar Cell

    E-Print Network [OSTI]

    Asadpour, Reza; Khan, M Ryyan; Alam, Muhammad A

    2015-01-01

    As single junction thin-film technologies, both Si heterojunction (HIT) and Perovskite based solar cells promise high efficiencies at low cost. One expects that a tandem cell design with these cells connected in series will improve the efficiency further. Using a self-consistent numerical modeling of optical and transport characteristics, however, we find that a traditional series connected tandem design suffers from low Jsc due to band-gap mismatch and current matching constraints. It requires careful thickness optimization of Perovskite to achieve any noticeable efficiency gain. Specifically, a traditional tandem cell with state-of-the-art HIT (24%) and Perovskite (20%) sub-cells provides only a modest tandem efficiency of ~25%. Instead, we demonstrate that a bifacial HIT/Perovskite tandem design decouples the optoelectronic constraints and provides an innovative path for extraordinary efficiencies. In the bifacial configuration, the same state-of the-art sub-cells achieve a normalized output of 33%, exceed...

  3. ADVANCED CUTTINGS TRANSPORT STUDY

    SciTech Connect (OSTI)

    Stefan Miska; Troy Reed; Ergun Kuru

    2004-09-30

    The Advanced Cuttings Transport Study (ACTS) was a 5-year JIP project undertaken at the University of Tulsa (TU). The project was sponsored by the U.S. Department of Energy (DOE) and JIP member companies. The objectives of the project were: (1) to develop and construct a new research facility that would allow three-phase (gas, liquid and cuttings) flow experiments under ambient and EPET (elevated pressure and temperature) conditions, and at different angle of inclinations and drill pipe rotation speeds; (2) to conduct experiments and develop a data base for the industry and academia; and (3) to develop mechanistic models for optimization of drilling hydraulics and cuttings transport. This project consisted of research studies, flow loop construction and instrumentation development. Following a one-year period for basic flow loop construction, a proposal was submitted by TU to the DOE for a five-year project that was organized in such a manner as to provide a logical progression of research experiments as well as additions to the basic flow loop. The flow loop additions and improvements included: (1) elevated temperature capability; (2) two-phase (gas and liquid, foam etc.) capability; (3) cuttings injection and removal system; (4) drill pipe rotation system; and (5) drilling section elevation system. In parallel with the flow loop construction, hydraulics and cuttings transport studies were preformed using drilling foams and aerated muds. In addition, hydraulics and rheology of synthetic drilling fluids were investigated. The studies were performed under ambient and EPET conditions. The effects of temperature and pressure on the hydraulics and cuttings transport were investigated. Mechanistic models were developed to predict frictional pressure loss and cuttings transport in horizontal and near-horizontal configurations. Model predictions were compared with the measured data. Predominantly, model predictions show satisfactory agreements with the measured data. As a part of this project, instrumentation was developed to monitor cuttings beds and characterize foams in the flow loop. An ultrasonic-based monitoring system was developed to measure cuttings bed thickness in the flow loop. Data acquisition software controls the system and processes the data. Two foam generating devices were designed and developed to produce foams with specified quality and texture. The devices are equipped with a bubble recognition system and an in-line viscometer to measure bubble size distribution and foam rheology, respectively. The 5-year project is completed. Future research activities will be under the umbrella of Tulsa University Drilling Research Projects. Currently the flow loop is being used for testing cuttings transport capacity of aqueous and polymer-based foams under elevated pressure and temperature conditions. Subsequently, the effect of viscous sweeps on cuttings transport under elevated pressure and temperature conditions will be investigated using the flow loop. Other projects will follow now that the ''steady state'' phase of the project has been achieved.

  4. Reaction of Si(111) Surface with Saturated Hydrocarbon

    SciTech Connect (OSTI)

    Suryana, Risa; Nakahara, Hitoshi; Saito, Yahachi; Ichimiya, Ayahiko

    2011-12-10

    Reaction of Si(111) surface with saturated hydrocarbon such as methane (CH{sub 4}) and ethane (C{sub 2}H{sub 6}) was carried out in a gas source molecular beam epitaxy (GSMBE). After carbonization, structures formed on the surface were observed by in situ reflection high-energy electron diffraction (RHEED). Structures transition formed on the surface were 7x7, {delta}-7x7, 1x1, and SiC structures. In the case of CH{sub 4}, the Si surfaces were carbonized at 800 deg. C for 120 min (7.2x10{sup 4} L) with a W-filament of 2800 deg. C, and SiC layers were obtained. In the case of C{sub 2}H{sub 6}, the mixture of 7x7 and SiC structure was observed. Decomposition of hydrocarbon was characterized in quadrupole mass spectroscopy (QMS) measurements. An atomic force microscopy (AFM) image of the mixture of 7x7 and SiC shows a wandering shape. Whereas, the SiC layer shows a regular step. This result seems to be related to the different in the amount of CH{sub 3} molecules on the surface.

  5. Transport optimization in stellaratorsa... H. E. Mynickb

    E-Print Network [OSTI]

    Mynick, Harry E.

    Transport optimization in stellaratorsa... H. E. Mynickb Plasma Physics Laboratory, Princeton transport in stellarators is presented. A primary deficiency of stellarators has been elevated transport this difficulty, developing a range of techniques for reducing transport, both neoclassical and, more recently

  6. Development of an SI DI Ethanol Optimized Flex Fuel Engine Using...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    an SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain Development of an SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain Presentation given at the...

  7. Update on EM Transportation Program Activities

    Office of Environmental Management (EM)

    Organizations * DOE Orders, Policy, Guidance Transportation Risk Reduction * Motor Carrier Evaluations * Physical Protection * Transportation Compliance Reviews * Safety...

  8. Supertruck - Improving Transportation Efficiency through Integrated...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Improving Transportation Efficiency through Integrated Vehicle, Engine and Powertrain Research Supertruck - Improving Transportation Efficiency through Integrated Vehicle, Engine...

  9. Department of Transportation Pipeline and Hazardous Materials...

    Office of Environmental Management (EM)

    Transportation Pipeline and Hazardous Materials Safety Administration Activities Department of Transportation Pipeline and Hazardous Materials Safety Administration Activities...

  10. Africa's Transport Infrastructure Mainstreaming Maintenance and...

    Open Energy Info (EERE)

    Africa's Transport Infrastructure Mainstreaming Maintenance and Management Jump to: navigation, search Tool Summary LAUNCH TOOL Name: Africa's Transport Infrastructure...

  11. Transportation and Stationary Power Integration Workshop Session...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transportation and Stationary Power Integration Workshop Agenda, October 27, 2008, Phoenix, Arizonia Transportation and Stationary Power Integration: Workshop Proceedings...

  12. Enhancing Transportation Energy Security through Advanced Combustion...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transportation Energy Security through Advanced Combustion and Fuels Technologies Enhancing Transportation Energy Security through Advanced Combustion and Fuels Technologies 2005...

  13. Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering

    SciTech Connect (OSTI)

    Cassidy, Cathal, E-mail: c.cassidy@oist.jp; Singh, Vidyadhar; Grammatikopoulos, Panagiotis [Nanoparticles by Design Unit, Okinawa Institute of Science and Technology (OIST) Graduate University, 1919-1 Onna-Son, Okinawa 904-0495 (Japan); Kioseoglou, Joseph [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Lal, Chhagan [Department of Physics, University of Rajasthan, Jaipur, Rajasthan 302005 (India); Sowwan, Mukhles, E-mail: mukhles@oist.jp [Nanoparticles by Design Unit, Okinawa Institute of Science and Technology (OIST) Graduate University, 1919-1 Onna-Son, Okinawa 904-0495 (Japan); Nanotechnology Research Laboratory, Al-Quds University, East Jerusalem, P.O. Box 51000, Palestine (Country Unknown)

    2014-04-21

    We report on the formation of embedded B2-FeSi nanodots in [100]-oriented Si substrates, and investigate the crystallographic mechanism underlying the stabilization of this uncommon, bulk-unstable, phase. The nanodots were approximately 10?nm in size, and were formed by iron thin film deposition and subsequent annealing. Cross-sectional transmission electron microscopy, energy loss spectroscopy mapping, and quantitative image simulation and analysis were utilized to identify the phase, strain, and orientational relationship of the nanodots to the host silicon lattice. X-ray photoelectron spectroscopy was utilized to analyze the surface composition and local bonding. Elasticity calculations yielded a nanodot residual strain value of ?18%. Geometrical phase analysis graphically pinpointed the positions of misfit dislocations, and clearly showed the presence of pinned (11{sup ¯}1{sup ¯}){sub Si}//(100){sub FeSi}, and unpinned (2{sup ¯}42){sub Si}//(010){sub FeSi}, interfaces. This partial endotaxy in the host silicon lattice was the mechanism that stabilized the B2-FeSi phase.

  14. ADVANCED CUTTINGS TRANSPORT STUDY

    SciTech Connect (OSTI)

    Ergun Kuru; Stefan Miska; Nicholas Takach; Kaveh Ashenayi; Gerald Kane; Mark Pickell; Len Volk; Mike Volk; Barkim Demirdal; Affonso Lourenco; Evren Ozbayoglu; Paco Vieira; Neelima Godugu

    2000-07-30

    ACTS flow loop is now operational under elevated pressure and temperature. Currently, experiments with synthetic based drilling fluids under pressure and temperature are being conducted. Based on the analysis of Fann 70 data, empirical correlations defining the shear stress as a function of temperature, pressure and the shear rate have been developed for Petrobras synthetic drilling fluids. PVT equipment has been modified for testing Synthetic oil base drilling fluids. PVT tests with Petrobras Synthetic base mud have been conducted and results are being analyzed Foam flow experiments have been conducted and the analysis of the data has been carried out to characterize the rheology of the foam. Comparison of pressure loss prediction from the available foam hydraulic models and the test results has been made. Cuttings transport experiments in horizontal annulus section have been conducted using air, water and cuttings. Currently, cuttings transport tests in inclined test section are being conducted. Foam PVT analysis tests have been conducted. Foam stability experiments have also been conducted. Effects of salt and oil concentration on the foam stability have been investigated. Design of ACTS flow loop modification for foam and aerated mud flow has been completed. A flow loop operation procedure for conducting foam flow experiments under EPET conditions has been prepared Design of the lab-scale flow loop for dynamic foam characterization and cuttings monitoring instrumentation tests has been completed. The construction of the test loop is underway. As part of the technology transport efforts, Advisory Board Meeting with ACTS-JIP industry members has been organized on May 13, 2000.

  15. ADVANCED CUTTINGS TRANSPORT STUDY

    SciTech Connect (OSTI)

    Stefan Miska; Nicholas Takach; Kaveh Ashenayi; Mengjiao Yu; Ramadan Ahmed; Mark Pickell; Len Volk; Lei Zhou; Zhu Chen; Aimee Washington; Crystal Redden

    2003-09-30

    The Quarter began with installing the new drill pipe, hooking up the new hydraulic power unit, completing the pipe rotation system (Task 4 has been completed), and making the SWACO choke operational. Detailed design and procurement work is proceeding on a system to elevate the drill-string section. The prototype Foam Generator Cell has been completed by Temco and delivered. Work is currently underway to calibrate the system. Literature review and preliminary model development for cuttings transportation with polymer foam under EPET conditions are in progress. Preparations for preliminary cuttings transport experiments with polymer foam have been completed. Two nuclear densitometers were re-calibrated. Drill pipe rotation system was tested up to 250 RPM. Water flow tests were conducted while rotating the drill pipe up to 100 RPM. The accuracy of weight measurements for cuttings in the annulus was evaluated. Additional modifications of the cuttings collection system are being considered in order to obtain the desired accurate measurement of cuttings weight in the annular test section. Cutting transport experiments with aerated fluids are being conducted at EPET, and analyses of the collected data are in progress. The printed circuit board is functioning with acceptable noise level to measure cuttings concentration at static condition using ultrasonic method. We were able to conduct several tests using a standard low pass filter to eliminate high frequency noise. We tested to verify that we can distinguish between different depths of sand in a static bed of sand. We tested with water, air and a mix of the two mediums. Major modifications to the DTF have almost been completed. A stop-flow cell is being designed for the DTF, the ACTF and Foam Generator/Viscometer which will allow us to capture bubble images without the need for ultra fast shutter speeds or microsecond flash system.

  16. Resolving the mystery of transport within internal transport barriers

    SciTech Connect (OSTI)

    Staebler, G. M.; Belli, E. A.; Candy, J.; Waltz, R. E.; Greenfield, C. M.; Lao, L. L.; Smith, S. P.; Kinsey, J. E.; Grierson, B. A.; Chrystal, C.

    2014-05-15

    The Trapped Gyro-Landau Fluid (TGLF) quasi-linear model [G. M. Staebler, et al., Phys. Plasmas 12, 102508 (2005)], which is calibrated to nonlinear gyrokinetic turbulence simulations, is now able to predict the electron density, electron and ion temperatures, and ion toroidal rotation simultaneously for internal transport barrier (ITB) discharges. This is a strong validation of gyrokinetic theory of ITBs, requiring multiple instabilities responsible for transport in different channels at different scales. The mystery of transport inside the ITB is that momentum and particle transport is far above the predicted neoclassical levels in apparent contradiction with the expectation from the theory of suppression of turbulence by E×B velocity shear. The success of TGLF in predicting ITB transport is due to the inclusion of ion gyro-radius scale modes that become dominant at high E×B velocity shear and to improvements to TGLF that allow momentum transport from gyrokinetic turbulence to be faithfully modeled.

  17. Transportation | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservationBio-Inspired SolarAbout / Transforming Y-12Capacity-ForumTransportation

  18. Transportation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EISTJThin Film SolarTown ofTransportToolkit Prototype Jump

  19. Transportation Fuel Supply | NISAC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.WeekProducts >Transportation currently accounts for

  20. Transportation Representation | NISAC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.WeekProducts >Transportation currently

  1. Transportation and Parking

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.WeekProducts >Transportation

  2. Electron Heat Transport Measured

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansas Nuclear ProfileMultiferroicAward |Electron CorrelationHeat Transport

  3. Sandia Energy - Transportation Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservation of Fe(II)GeothermalFuel MagnetizationTransportation Energy Home Analysis Final

  4. Sandia Energy - Transportation Safety

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservation of Fe(II)GeothermalFuel MagnetizationTransportation Energy Home

  5. Microstructure of erbium-implanted Si D. J. Eaglesham, J. Michel, E. A. Fitzgerald, D. C. Jacobson, J. M. Poate,

    E-Print Network [OSTI]

    Polman, Albert

    . The attainment of efficient light emission from Si for optoelectronic integration is one of the holy grails of Si

  6. Photovoltaic nanocrystal scintillators hybridized on Si solar cells

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Photovoltaic nanocrystal scintillators hybridized on Si solar cells for enhanced conversion on solar cells to enhance photovoltaic device parameters including spectral responsivity, open circuit@bilkent.edu.tr Abstract: We propose and demonstrate semiconductor nanocrystal based photovoltaic scintillators integrated

  7. Nanoscale contact engineering for Si/Silicide nanowire devices

    E-Print Network [OSTI]

    Lin, Yung-Chen

    2012-01-01

    1-19 Figure 1-5. Growth technologies of silicide materials:Figure 1-5. Growth technologies of silicide materials:with current Si technology. 1.4.The growth and applications

  8. Si Industry at a Crossroads: New Materials or New Factories?

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Many trends in the silicon industry could be interpreted as the herald of the end of traditional Si scaling. If this premise holds, future performance and system-on-chip applications may not be reached with conventional ...

  9. Crystallization from high temperature solutions of Si in copper

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1994-01-01

    A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

  10. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect (OSTI)

    Geiger, R., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch; Sigg, H., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Frigerio, J.; Chrastina, D.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Süess, M. J. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Faist, J. [Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

    2014-02-10

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6?ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3?ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  11. Ge-on-Si laser for silicon photonics

    E-Print Network [OSTI]

    Camacho-Aguilera, Rodolfo Ernesto

    2013-01-01

    Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

  12. On Energy Inequalities Vesna Peri~si'c

    E-Print Network [OSTI]

    Conrad, Marc

    "ucken Germany perisic@math.uni-sb.de #12; Energy Inequalities On Energy Inequalities Vesna Peri~si'c Fachbereich Mathematik Universit"at des Saarlandes Postfach 15 11 50 D-66041 Saarbr"ucken Germany

  13. ELECTROCHEMICAL POWER FOR TRANSPORTATION

    SciTech Connect (OSTI)

    Cairns, Elton J.; Hietbrink, Earl H.

    1981-01-01

    This section includes some historical background of the rise and fall and subsequent rebirth of the electric vehicle; and a brief discussion of current transportation needs, and environmental and energy utilization issues that resulted in the renewed interest in applying electrochemical energy conversion technology to electric vehicle applications. Although energy utilization has evolved to be the most significant and important issue, the environmental issue will be discussed first in this section only because of its chronological occurrence. The next part of the chapter is a review of passenger and commercial electric vehicle technology with emphasis on vehicle design and demonstrated performance of vehicles with candidate power sources being developed. This is followed by a discussion of electrochemical power source requirements associated with future electric vehicles that can play a role in meeting modern transportation needs. The last part of the chapter includes first a discussion of how to identify candidate electrochemical systems that might be of interest in meeting electric vehicle power source requirements. This is then followed by a review of the current technological status of these systems and a discussion of the most significant problems that must be resolved before each candidate system can be a viable power source.

  14. ADVANCED CUTTINGS TRANSPORT STUDY

    SciTech Connect (OSTI)

    Troy Reed; Stefan Miska; Nicholas Takach; Kaveh Ashenayi; Mark Pickell; Len Volk; Mike Volk; Lei Zhou; Zhu Chen; Crystal Redden; Aimee Washington

    2003-07-30

    This Quarter has been divided between running experiments and the installation of the drill-pipe rotation system. In addition, valves and piping were relocated, and three viewports were installed. Detailed design work is proceeding on a system to elevate the drill-string section. Design of the first prototype version of a Foam Generator has been finalized, and fabrication is underway. This will be used to determine the relationship between surface roughness and ''slip'' of foams at solid boundaries. Additional cups and rotors are being machined with different surface roughness. Some experiments on cuttings transport with aerated fluids have been conducted at EPET. Theoretical modeling of cuttings transport with aerated fluids is proceeding. The development of theoretical models to predict frictional pressure losses of flowing foam is in progress. The new board design for instrumentation to measure cuttings concentration is now functioning with an acceptable noise level. The ultrasonic sensors are stable up to 190 F. Static tests with sand in an annulus indicate that the system is able to distinguish between different sand concentrations. Viscometer tests with foam, generated by the Dynamic Test Facility (DTF), are continuing.

  15. OXYGEN TRANSPORT CERAMIC MEMBRANES

    SciTech Connect (OSTI)

    Dr. Sukumar Bandopadhyay; Dr. Nagendra Nagabhushana

    2000-10-01

    This is the third quarterly report on oxygen Transport Ceramic Membranes. In the following, the report describes the progress made by our university partners in Tasks 1 through 6, experimental apparatus that was designed and built for various tasks of this project, thermodynamic calculations, where applicable and work planned for the future. (Task 1) Design, fabricate and evaluate ceramic to metal seals based on graded ceramic powder/metal braze joints. (Task 2) Evaluate the effect of defect configuration on ceramic membrane conductivity and long term chemical and structural stability. (Task 3) Determine materials mechanical properties under conditions of high temperatures and reactive atmospheres. (Task 4) Evaluate phase stability and thermal expansion of candidate perovskite membranes and develop techniques to support these materials on porous metal structures. (Task 5) Assess the microstructure of membrane materials to evaluate the effects of vacancy-impurity association, defect clusters, and vacancy-dopant association on the membrane performance and stability. (Task 6) Measure kinetics of oxygen uptake and transport in ceramic membrane materials under commercially relevant conditions using isotope labeling techniques.

  16. Transportation Statistics Annual Report 1997

    SciTech Connect (OSTI)

    Fenn, M.

    1997-01-01

    This document is the fourth Transportation Statistics Annual Report (TSAR) prepared by the Bureau of Transportation Statistics (BTS) for the President and Congress. As in previous years, it reports on the state of U.S. transportation system at two levels. First, in Part I, it provides a statistical and interpretive survey of the system—its physical characteristics, its economic attributes, aspects of its use and performance, and the scale and severity of unintended consequences of transportation, such as fatalities and injuries, oil import dependency, and environment impacts. Part I also explores the state of transportation statistics, and new needs of the rapidly changing world of transportation. Second, Part II of the report, as in prior years, explores in detail the performance of the U.S. transportation system from the perspective of desired social outcomes or strategic goals. This year, the performance aspect of transportation chosen for thematic treatment is “Mobility and Access,” which complements past TSAR theme sections on “The Economic Performance of Transportation” (1995) and “Transportation and the Environment” (1996). Mobility and access are at the heart of the transportation system’s performance from the user’s perspective. In what ways and to what extent does the geographic freedom provided by transportation enhance personal fulfillment of the nation’s residents and contribute to economic advancement of people and businesses? This broad question underlies many of the topics examined in Part II: What is the current level of personal mobility in the United States, and how does it vary by sex, age, income level, urban or rural location, and over time? What factors explain variations? Has transportation helped improve people’s access to work, shopping, recreational facilities, and medical services, and in what ways and in what locations? How have barriers, such as age, disabilities, or lack of an automobile, affected these accessibility patterns? How are commodity flows and transportation services responding to global competition, deregulation, economic restructuring, and new information technologies? How do U.S. patterns of personal mobility and freight movement compare with other advanced industrialized countries, formerly centrally planned economies, and major newly industrializing countries? Finally, how is the rapid adoption of new information technologies influencing the patterns of transportation demand and the supply of new transportation services? Indeed, how are information technologies affecting the nature and organization of transportation services used by individuals and firms?

  17. Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

    SciTech Connect (OSTI)

    Saini, Viney [Univ. of Arkansas at Little Rock, Little Rock, AR (United States) Dept. of Applied Science; Li, Zhongrui [Univ. of Arkansas at Little Rock, Little Rock, AR (United States) Dept. of Applied Science; Bourdo, Shawn [Univ. of Arkansas at Little Rock, Little Rock, AR (United States) Dept. of Applied Science; Univ. of Arkansas at Little Rock, Little Rock, AR (United States) Dept. of Chemistry; Kunets, Vasyl P. [Univ. of Arkansas, Fayetteville, AR (United States) Dept. of Physics; Trigwell, Steven [NASA Kennedy Space Center, FL (United States); Couraud, Arthur [Univ. of Arkansas at Little Rock, Little Rock, AR (United States) Dept. of Applied Science; Ecole d'Ingenieurs du CESI-EIA, La Couronne (France); Rioux, Julien [Univ. of Arkansas at Little Rock, Little Rock, AR (United States) Dept. of Applied Science; Ecole d'Ingenieurs du CESI-EIA, La Couronne (France); Boyer, Cyril [Univ. of Arkansas at Little Rock, Little Rock, AR (United States) Dept. of Applied Science; Ecole d'Ingenieurs du CESI-EIA, La Couronne (France); Nteziyaremye, Valens [Univ. of Arkansas at Little Rock, Little Rock, AR (United States) Dept. of Applied Science; Dervishi, Enkeleda [Univ. of Arkansas at Little Rock, Little Rock, AR (United States) Dept. of Applied Science; Biris, Alexandru R. [National Institute for Research and Development of Isotopic and Molecular Technologies, Cluj-Napoca (Romania); Salamo, Gregory J. [Univ. of Arkansas, Fayetteville, AR (United States) Dept. of Physics; Viswanathan, Tito [Univ. of Arkansas at Little Rock, Little Rock, AR (United States) Dept. of Chemistry; Biris, Alexandru S. [Univ. of Arkansas at Little Rock, Little Rock, AR (United States) Dept. of Applied Science

    2011-01-01

    A simple and easily processible photovoltaic device has been developed based on borondoped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The single-walled carbon nanotubes (SWNTs) were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection and transportation, while the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.

  18. Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Saini, Viney [Univ. of Arkansas, Little Rock, AR (United States); Li, Zhongrui [Univ. of Arkansas, Little Rock, AR (United States); Bourdo, Shawn [Univ. of Arkansas, Little Rock, AR (United States); Kunets, Vasyl P. [Univ. of Arkansas, Fayetteville, AR (United States); Trigwell, Steven [ASRC Aerospace Corp., Kennedy Space Center, FL (United States); Couraud, Arthur [Univ. of Arkansas, Little Rock, AR (United States) and Ecole d'Ingenieurs de CESI-EIA, La Couronne (France); Rioux, Julien [Univ. of Arkansas, Little Rock, AR (United States) and Ecole d'Ingenieurs du CESI-EIA, La Couronne (France); Boyer, Cyril [Univ. of Arkansas, Little Rock, AR (United States) and Ecole d'Ingenieurs du CESI-EIA, La Couronne (France); Nteziyaremye, Valens [Univ. of Arkansas, Little Rock, AR (United States); Dervishi, Enkeleda [Univ. of Arkansas, Little Rock, AR (United States); Biris, Alexandru R. [National Institute for Research and Development of Isotopic and Molecular Technologies, Cluj-Napoca (Romania); Salamo, Gregory J. [Univ. of Arkansas, Fayetteville, AR (United States); Viswanathan, Tito [Univ. of Arkansas, Little Rock, AR (United States); Biris, Alexandru S. [Univ. of Arkansas, Little Rock, AR (United States)

    2011-01-13

    A simple and easily processible photovoltaic device has been developed based on borondoped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The single-walled carbon nanotubes (SWNTs) were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection and transportation, while the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.

  19. Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Saini, Viney; Li, Zhongrui; Bourdo, Shawn; Kunets, Vasyl P.; Trigwell, Steven; Couraud, Arthur; Ecole d'Ingenieurs du CESI-EIA, La Couronne; Rioux, Julien; Ecole d'Ingenieurs du CESI-EIA, La Couronne; Boyer, Cyril; et al

    2011-01-13

    A simple and easily processible photovoltaic device has been developed based on borondoped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The single-walled carbon nanotubes (SWNTs) were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection and transportation, whilemore »the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.« less

  20. Nanoengineered membranes for controlled transport

    DOE Patents [OSTI]

    Doktycz, Mitchel J. (Oak Ridge, TN) [Oak Ridge, TN; Simpson, Michael L. (Knoxville, TN) [Knoxville, TN; McKnight, Timothy E. (Greenback, TN) [Greenback, TN; Melechko, Anatoli V. (Oak Ridge, TN) [Oak Ridge, TN; Lowndes, Douglas H. (Knoxville, TN) [Knoxville, TN; Guillorn, Michael A. (Knoxville, TN) [Knoxville, TN; Merkulov, Vladimir I. (Oak Ridge, TN) [Oak Ridge, TN

    2010-01-05

    A nanoengineered membrane for controlling material transport (e.g., molecular transport) is disclosed. The membrane includes a substrate, a cover definining a material transport channel between the substrate and the cover, and a plurality of fibers positioned in the channel and connected to an extending away from a surface of the substrate. The fibers are aligned perpendicular to the surface of the substrate, and have a width of 100 nanometers or less. The diffusion limits for material transport are controlled by the separation of the fibers. In one embodiment, chemical derivitization of carbon fibers may be undertaken to further affect the diffusion limits or affect selective permeability or facilitated transport. For example, a coating can be applied to at least a portion of the fibers. In another embodiment, individually addressable carbon nanofibers can be integrated with the membrane to provide an electrical driving force for material transport.

  1. Testing the clump model of SiO maser emission

    E-Print Network [OSTI]

    M. D. Gray; R. J. Ivison; E. M. L. Humphreys; J. A. Yates

    1997-12-08

    Building on the detection of J=7-6 SiO maser emission in both the v=1 and v=2 vibrational states towards the symbiotic Mira, R Aquarii, we have used the James Clerk Maxwell Telescope to study the changes in the SiO maser features from R Aqr over a stellar pulsational period. The observations, complemented by contemporaneous data taken at 86 GHz, represent a test of the popular thermal-instability clump models of SiO masers. The `clump' model of SiO maser emission considers the SiO masers to be discrete emitting regions which differ from their surroundings in the values of one or more physical variables (SiO abundance, for example). We find that our observational data are consistent with a clump model in which the appearance of maser emission in the J=7-6 transitions coincides with an outward-moving shock impinging on the inner edge of the maser zone.

  2. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  3. Si, Yo Puedo Controlar M Diabetes! (Si, Yo Puedo) is an evidence-informed, culturally competent educational

    E-Print Network [OSTI]

    , New Mexico (N = 79). The findings below summarize the impact of the Si, Yo Puedo program. Outcome on the American Diabetes Association's national standards of care and employs the Social Cognitive and Self

  4. SiGe-free strained Si on insulator by wafer bonding and layer transfer T. A. Langdo,a)

    E-Print Network [OSTI]

    ­8 or Ge condensation during SiGe oxidation.9 In these approaches, the relaxed SGOI layer serves as a ten chemical mechanical polishing step to elimi- nate the surface crosshatch roughness induced by the com

  5. The ArduSiPM a compact trasportable Software/Hardware Data Acquisition system for SiPM detector

    E-Print Network [OSTI]

    Bocci, Valerio; Iacoangeli, Francesco; Nuccetelli, Massimo; Recchia, Luigi

    2014-01-01

    The acquisition of a single Silicon Photomultiplier require multiple and expensive electronics modules as : preamplifier, discriminator, bias voltage power supply, temperature monitor, Scalers, Analog to Digital Converter and Time to Digital Converter . The developed ArduSiPM is a compact cost effective and easily replicable Hardware software module for SiPM detector readout. The ArduSiPM uses an Arduino DUE (an open Software/Hardware board based on an ARM Cortex-M3 microcontroller) as processor board and a piggyback custom designed board (Shield), these are controlled by custom developed software and interface. The Shield contains different electronics features both to monitor, to set and to acquire the SiPM signals using the microcontroller board. The shield embed a controlled bias voltage power supply, a fast voltage preamplifier, a programmable fast discriminator to generate over threshold digital pulse , a peak hold to measure the pulse height, a temperature monitor system, a scaler to monitor over thres...

  6. Transportation and Greenhouse Gas Mitigation

    E-Print Network [OSTI]

    Lutsey, Nicholas P.; Sperling, Dan

    2008-01-01

    Summary of transportation greenhouse gas mitigation optionsof alternative fuels. Low greenhouse gas fuels Mixing ofMAC) refrigerant replacement. Greenhouse gas budgets for

  7. Heat transport within the Earth

    E-Print Network [OSTI]

    Herndon, J Marvin

    2011-01-01

    Numerous attempts have been made to interpret Earth's dynamic processes based upon heat transport concepts derived from ordinary experience. But, ordinary experience can be misleading, especially when underlain by false assumptions. Geodynamic considerations traditionally have embraced three modes of heat transport: conduction, convection, and radiation. Recently, I introduced a fourth, "mantle decompression thermal tsunami" that, I submit, is responsible for emplacing heat at the base of the Earth's crust. Here, I review thermal transport within the Earth and speculate that there might be a fifth mode: "heat channeling", involving heat transport from the core to "hot-spots" such as those that power the Hawaiian Islands and Iceland.

  8. Transportation Projects | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    share of petroleum use, carbon dioxide (a primary greenhouse gas) emissions, and air pollution, advances in fuel cell power systems for transportation could substantially improve...

  9. Transport Properties for Combustion Modeling

    E-Print Network [OSTI]

    Brown, N.J.

    2010-01-01

    a critical role in combustion processes just as chemicalparameters are essential for combustion modeling; molecularwith Application to Combustion. Transport Theor Stat 2003;

  10. TRANSPORTATION TOMORROW SURVEY DATA EXPANSION

    E-Print Network [OSTI]

    Toronto, University of

    in Transportation August 2007 #12;Table of Contents 1. Introduction and trip data associated with the households in that geographic area. The UTM coordinates belonging to each

  11. Alternative Transportation Technologies: Hydrogen, Biofuels,...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Hydrogen, Biofuels, Advanced Efficiency, and Plug-in Hybrid Electric Vehicles Alternative Transportation Technologies: Hydrogen, Biofuels, Advanced Efficiency, and Plug-in...

  12. Transportation and Greenhouse Gas Mitigation

    E-Print Network [OSTI]

    Lutsey, Nicholas P.; Sperling, Dan

    2008-01-01

    thereby contributing to energy security. Most also reducesuch as improved energy security, many transport GHGincluding energy cost savings, oil security, and pollution

  13. Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique

    SciTech Connect (OSTI)

    Demiro?lu, D.; Kazmanli, K.; Urgen, M.; Tatar, B.

    2013-12-16

    In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence on them. Sculptured thin films have wide application areas as electronics, optics, mechanics, magnetic and chemistry. Slanted nano-columnar (SnC) thin films are a type of sculptured thin films. In this investigation SnC thin films were growth on n-type crystalline Si(100) and p-type crystalline Si(111) via ultra-high vacuum electron beam evaporation technique. The structural and morphological properties of the amorphous silicon thin films were investigated by XRD, Raman and FE-SEM analysis. According to the XRD and Raman analysis the structure of thin film was amorphous and FE-SEM analysis indicated slanted nano-columns were formed smoothly. Slanted nano-columns a-Si/c-Si heterojunction were prepared as using a photovoltaic device. In this regard we were researched photovoltaic properties of these heterojunction with current-voltage characterization under dark and illumination conditions. Electrical parameters were determined from the current-voltage characteristic in the dark conditions zero-bias barrier height ?{sub B0}?=?0.83?1.00eV; diode ideality factor ??=?11.71?10.73; series resistance R{sub s}?=?260?31.1 k? and shunt resistance R{sub sh}?=?25.71?63.5 M? SnC a-Si/n-Si and SnC a-Si/p-Si heterojunctions shows a pretty good photovoltaic behavior about 10{sup 3}- 10{sup 4} times. The obtained photovoltaic parameters are such as short circuit current density J{sub sc} 83-40 mA/m{sup 2}, open circuit voltage V{sub oc} 900-831 mV.

  14. Residual Stress in CVD-grown 3C-SiC Films on Si Substrates Alex A. Volinsky1

    E-Print Network [OSTI]

    Volinsky, Alex A.

    strain. EXPERIMENT Single crystal 3C-SiC films were grown hetero-epitaxially in a hot-wall chemical vapor pressure in a flow of 16 standard cubic centimeters per minute (sccm) of C3H8 and 10 standard liters per. During the ramp, the propane flow was linearly decreased to 8.0 sccm for a (100) Si substrate or to 5

  15. Last Updated: July 12, 2011 1 iSiS Browser Troubleshooting Tips

    E-Print Network [OSTI]

    Massachusetts at Lowell, University of

    Last Updated: July 12, 2011 1 iSiS ­ Browser Troubleshooting Tips Web browsers retain information to help speed up the process of loading pages and using iSiS. Unfortunately, during times that there are iSiS software changes, the browsers need to be cleaned to ensure iSiS operates correctly. Here are some

  16. Institute of Transport Studies PSU Transportation Seminar, 21 May 2010

    E-Print Network [OSTI]

    Bertini, Robert L.

    of Electric Bicycles Assoc. Prof. Geoff Rose Director, ITS (Monash) Transport Theme Leader, Monash expand the role of the bicycle in the context of urban transportation · This seminar examines electric Battery technology · Sealed lead acid (SLA) ­ Well understood and cheapest ­ Heavy ­ Modest life · Nickel

  17. Climate and Transportation Solutions: Findings from the 2009 Asilomar Conference on Transportation and Energy Policy

    E-Print Network [OSTI]

    Sperling, Daniel; Cannon, James S.

    2010-01-01

    on Transportation, Energy and Policy convened in 1988. Oilon Transportation, Energy and Policy has been held at theon Transportation, Energy and Policy in July 2009 was the

  18. Climate and Transportation Solutions: Findings from the 2009 Asilomar Conference on Transportation and Energy Policy

    E-Print Network [OSTI]

    Sperling, Daniel; Cannon, James S.

    2010-01-01

    cials (AASHTO), Transport Canada, the California DepartmentA case study of California. ” Transport. Res. Part D. West,smaller transport-related carbon footprint than California,

  19. Climate and Transportation Solutions: Findings from the 2009 Asilomar Conference on Transportation and Energy Policy

    E-Print Network [OSTI]

    Sperling, Daniel; Cannon, James S.

    2010-01-01

    California Department of Transportation, the California EnergyCalifornia Energy Commission Climate and TransportationTransportation and Energy Policy, at Paci?c Grove, California.

  20. Silver (Ag) Transport Mechanisms in TRISO Coated Particles: A Critical Review

    SciTech Connect (OSTI)

    IJ van Rooyen; ML Dunzik-Gougar; PM van Rooyen

    2014-05-01

    Transport of 110mAg in the intact SiC layer of TRISO coated particles has been studied for approximately 30 years without arriving at a satisfactory explanation of the transport mechanism. In this paper the possible mechanisms postulated in previous experimental studies, both in-reactor and out-of reactor research environment studies are critically reviewed and of particular interest are relevance to very high temperature gas reactor operating and accident conditions. Among the factors thought to influence Ag transport are grain boundary stoichiometry, SiC grain size and shape, the presence of free silicon, nano-cracks, thermal decomposition, palladium attack, transmutation products, layer thinning and coated particle shape. Additionally new insight to nature and location of fission products has been gained via recent post irradiation electron microscopy examination of TRISO coated particles from the DOE’s fuel development program. The combined effect of critical review and new analyses indicates a direction for investigating possible the Ag transport mechanism including the confidence level with which these mechanisms may be experimentally verified.

  1. Silver (Ag) Transport Mechanisms in TRISO coated particles: A Critical Review

    SciTech Connect (OSTI)

    I J van Rooyen; J H Neethling; J A A Engelbrecht; P M van Rooyen; G Strydom

    2012-10-01

    Transport of 110mAg in the intact SiC layer of TRISO coated particles has been studied for approximately 30 years without arriving at a satisfactory explanation of the transport mechanism. In this paper the possible mechanisms postulated in previous experimental studies, both in-reactor and out-of reactor research environment studies are critically reviewed and of particular interest are relevance to very high temperature gas reactor operating and accident conditions. Among the factors thought to influence Ag transport are grain boundary stoichiometry, SiC grain size and shape, the presence of free silicon, nano-cracks, thermal decomposition, palladium attack, transmutation products, layer thinning and coated particle shape. Additionally new insight to nature and location of fission products has been gained via recent post irradiation electron microscopy examination of TRISO coated particles from the DOE’s fuel development program. The combined effect of critical review and new analyses indicates a direction for investigating possible the Ag transport mechanism including the confidence level with which these mechanisms may be experimentally verified.

  2. Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

    SciTech Connect (OSTI)

    Gunasekera, K.; Boolchand, P. [School of Electronics and Computing Systems, College of Engineering and Applied Science, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Micoulaut, M., E-mail: mmi@lptl.jussieu.fr [Laboratoire de Physique Théorique de la Matière Condensée, Université Pierre et Marie Curie, 4 Place Jussieu, F-75252 Paris Cedex 05 (France)

    2014-04-28

    Amorphous Ge{sub x}Si{sub x}Te{sub 1?2x} glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions x{sub c1}=7.5% and Si) are increased. The structural manifestation of these anomalies is understood from ?{sup 119}Sn Mössbauer spectroscopy and First Principles Molecular Dynamics at selected compositions (Ge{sub 20}Te{sub 80}, Si{sub 20}Te{sub 80}, and Ge{sub 10}Si{sub 10}Te{sub 80}). The numerical models reveal the quite different roles played by the modifier or network cross-linker Ge or Si atoms, Si being more tetrahedral in sp{sup 3} geometry, whereas Mössbauer spectroscopy shows that the nature of chemical bonding is dramatically changed around x??8%. The precise evolution of the local structure and chemical bonding ultimately allows understanding the origin of the intermediate phase in these complex tellurides.

  3. Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

    SciTech Connect (OSTI)

    So?tys, Jakub; Piechota, Jacek; Ptasinska, Maria; Krukowski, Stanis?aw

    2014-08-28

    Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and “wizard hat” parabolic for rhombohedral (ABCA) stacking.

  4. Transport in holographic superfluids

    E-Print Network [OSTI]

    Christopher P. Herzog; Nir Lisker; Piotr Surowka; Amos Yarom

    2011-01-17

    We construct a slowly varying space-time dependent holographic superfluid and compute its transport coefficients. Our solution is presented as a series expansion in inverse powers of the charge of the order parameter. We find that the shear viscosity associated with the motion of the condensate vanishes. The diffusion coefficient of the superfluid is continuous across the phase transition while its third bulk viscosity is found to diverge at the critical temperature. As was previously shown, the ratio of the shear viscosity of the normal component to the entropy density is 1/(4 pi). As a consequence of our analysis we obtain an analytic expression for the backreacted metric near the phase transition for a particular type of holographic superfluid.

  5. Heat transport system

    DOE Patents [OSTI]

    Harkness, Samuel D. (McMurray, PA)

    1982-01-01

    A falling bed of ceramic particles receives neutron irradiation from a neutron-producing plasma and thereby transports energy as heat from the plasma to a heat exchange location where the ceramic particles are cooled by a gas flow. The cooled ceramic particles are elevated to a location from which they may again pass by gravity through the region where they are exposed to neutron radiation. Ceramic particles of alumina, magnesia, silica and combinations of these materials are contemplated as high-temperature materials that will accept energy from neutron irradiation. Separate containers of material incorporating lithium are exposed to the neutron flux for the breeding of tritium that may subsequently be used in neutron-producing reactions. The falling bed of ceramic particles includes velocity partitioning between compartments near to the neutron-producing plasma and compartments away from the plasma to moderate the maximum temperature in the bed.

  6. Hydrogen transport membranes

    DOE Patents [OSTI]

    Mundschau, Michael V.

    2005-05-31

    Composite hydrogen transport membranes, which are used for extraction of hydrogen from gas mixtures are provided. Methods are described for supporting metals and metal alloys which have high hydrogen permeability, but which are either too thin to be self supporting, too weak to resist differential pressures across the membrane, or which become embrittled by hydrogen. Support materials are chosen to be lattice matched to the metals and metal alloys. Preferred metals with high permeability for hydrogen include vanadium, niobium, tantalum, zirconium, palladium, and alloys thereof. Hydrogen-permeable membranes include those in which the pores of a porous support matrix are blocked by hydrogen-permeable metals and metal alloys, those in which the pores of a porous metal matrix are blocked with materials which make the membrane impervious to gases other than hydrogen, and cermets fabricated by sintering powders of metals with powders of lattice-matched ceramic.

  7. Transportation System Concept of Operations

    SciTech Connect (OSTI)

    N. Slater-Thompson

    2006-08-16

    The Nuclear Waste Policy Act of 1982 (NWPA), as amended, authorized the DOE to develop and manage a Federal system for the disposal of SNF and HLW. OCRWM was created to manage acceptance and disposal of SNF and HLW in a manner that protects public health, safety, and the environment; enhances national and energy security; and merits public confidence. This responsibility includes managing the transportation of SNF and HLW from origin sites to the Repository for disposal. The Transportation System Concept of Operations is the core high-level OCRWM document written to describe the Transportation System integrated design and present the vision, mission, and goals for Transportation System operations. By defining the functions, processes, and critical interfaces of this system early in the system development phase, programmatic risks are minimized, system costs are contained, and system operations are better managed, safer, and more secure. This document also facilitates discussions and understanding among parties responsible for the design, development, and operation of the Transportation System. Such understanding is important for the timely development of system requirements and identification of system interfaces. Information provided in the Transportation System Concept of Operations includes: the functions and key components of the Transportation System; system component interactions; flows of information within the system; the general operating sequences; and the internal and external factors affecting transportation operations. The Transportation System Concept of Operations reflects OCRWM's overall waste management system policies and mission objectives, and as such provides a description of the preferred state of system operation. The description of general Transportation System operating functions in the Transportation System Concept of Operations is the first step in the OCRWM systems engineering process, establishing the starting point for the lower level descriptions. of subsystems and components, and the Transportation System Requirements Document. Other program and system documents, plans, instructions, and detailed designs will be consistent with and informed by the Transportation System Concept of Operations. The Transportation System Concept of Operations is a living document, enduring throughout the OCRWM systems engineering lifecycle. It will undergo formal approval and controlled revisions as appropriate while the Transportation System matures. Revisions will take into account new policy decisions, new information available through system modeling, engineering investigations, technical analyses and tests, and the introduction of new technologies that can demonstrably improve system performance.

  8. A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

    E-Print Network [OSTI]

    D. M. Zajac; T. M. Hazard; X. Mi; K. Wang; J. R. Petta

    2015-02-05

    We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

  9. Growth and structure of water on SiO2 films on Si investigated by Kelvin probe microscopy and in situ X-ray Spectroscopies

    E-Print Network [OSTI]

    Verdaguer, A.; Weis, C.; Oncins, G.; Ketteler, G.; Bluhm, H.; Salmeron, M.

    2008-01-01

    Growth and Structure of water on SiO 2 films on Simbsalmeron@lbl.gov The growth of water on thin SiO 2 films75% relative humidity (RH) water adsorbs forming a uniform

  10. Radioactive Material Transportation Practices Manual

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2008-06-04

    This Manual establishes standard transportation practices for the Department of Energy, including National Nuclear Security Administration to use in planning and executing offsite shipments of radioactive materials and waste. The revision reflects ongoing collaboration of DOE and outside organizations on the transportation of radioactive material and waste. Supersedes DOE M 460.2-1.

  11. Radial quasiballistic transport in time-domain thermoreflectance studied using Monte Carlo simulations

    SciTech Connect (OSTI)

    Ding, D.; Chen, X.; Minnich, A. J.

    2014-04-07

    Recently, a pump beam size dependence of thermal conductivity was observed in Si at cryogenic temperatures using time-domain thermal reflectance (TDTR). These observations were attributed to quasiballistic phonon transport, but the interpretation of the measurements has been semi-empirical. Here, we present a numerical study of the heat conduction that occurs in the full 3D geometry of a TDTR experiment, including an interface, using the Boltzmann transport equation. We identify the radial suppression function that describes the suppression in heat flux, compared to Fourier's law, that occurs due to quasiballistic transport and demonstrate good agreement with experimental data. We also discuss unresolved discrepancies that are important topics for future study.

  12. AMPS MODELING OF NANOCRYSTALLINE SI P-LAYER IN A-SI NIP SOLAR CELLS X. B. Liao, W. Wang and X. Deng

    E-Print Network [OSTI]

    Deng, Xunming

    . INTRODUCTION In order to provide guidance for the optimization of triple-junction amorphous silicon based solar-a-SiGe on the illuminated I-V characteristics for the middle and bottom component cells of a triple-junction a-Si solar cellAMPS MODELING OF NANOCRYSTALLINE SI P-LAYER IN A-SI NIP SOLAR CELLS X. B. Liao, W. Wang and X. Deng

  13. Last Updated: July 6, 2011 1 iSiS Adding iSiS as a Trusted Site (Internet Explorer)

    E-Print Network [OSTI]

    Massachusetts at Lowell, University of

    Last Updated: July 6, 2011 1 iSiS Adding iSiS as a Trusted Site (Internet Explorer) Steps is unchecked. 8. Insert the iSiS domain in the "Add this Web site to the zone" field: *.umasscs.net. 9. Click the button. 10. Insert the iSiS Login domain in the "Add this Web site to the zone" field: ucollaborate

  14. Coal Transportation Rate Sensitivity Analysis

    Reports and Publications (EIA)

    2005-01-01

    On December 21, 2004, the Surface Transportation Board (STB) requested that the Energy Information Administration (EIA) analyze the impact of changes in coal transportation rates on projected levels of electric power sector energy use and emissions. Specifically, the STB requested an analysis of changes in national and regional coal consumption and emissions resulting from adjustments in railroad transportation rates for Wyoming's Powder River Basin (PRB) coal using the National Energy Modeling System (NEMS). However, because NEMS operates at a relatively aggregate regional level and does not represent the costs of transporting coal over specific rail lines, this analysis reports on the impacts of interregional changes in transportation rates from those used in the Annual Energy Outlook 2005 (AEO2005) reference case.

  15. Energy Intensity Indicators: Transportation Energy Consumption

    Broader source: Energy.gov [DOE]

    This section contains an overview of the aggregate transportation sector, combining both passenger and freight segments of this sector. The specific energy intensity indicators for passenger and freight can be obtained from the links, passenger transportation, or freight transportation. For further detail within the transportation sector, download the appropriate Trend Data worksheet containing detailed data and graphics for specific transportation modes.

  16. 2/12/2014 Poite si kmobilu vtrnou turbnu! http://blog.greenhousing.cz/poridte-si-k-mobilu-vetrnou-turbinu/ 1/6

    E-Print Network [OSTI]

    Chiao, Jung-Chih

    2/12/2014 Poite si kmobilu vtrnou turbínu! http://blog Home » green » Poite si k mobilu vtrnou turbínu! GreenhousingBlog HOME NABÍDKA SPOLECNOSTI ZELENÝ PIONÝR Search the site Search #12;2/12/2014 Poite si kmobilu vtrnou turbínu! http://blog

  17. Uphill transport and the probabilistic transport model B. Ph. van Milligen

    E-Print Network [OSTI]

    van Milligen, Boudewijn

    Uphill transport and the probabilistic transport model B. Ph. van Milligen Asociacio´n EURATOM-CIEMAT

  18. On Techniques to Characterize and Correlate Grain Size, Grain Boundary Orientation and the Strength of the SiC Layer of TRISO Coated Particles: A Preliminary Study

    SciTech Connect (OSTI)

    I.J.van Rooyen; J.L. Dunzik Gougar; T. Trowbridge; Philip M van Rooyen

    2012-10-01

    The mechanical properties of the silicon carbide (SiC) layer of the TRi-ISOtropic (TRISO) coated particle (CP) for high temperature gas reactors (HTGR) are performance parameters that have not yet been standardized by the international HTR community. Presented in this paper are the results of characterizing coated particles to reveal the effect of annealing temperature (1000 to 2100°C) on the strength and grain size of unirradiated coated particles. This work was further expanded to include possible relationships between the grain size and strength values. The comparative results of two strength measurement techniques and grain size measured by the Lineal intercept method are included. Preliminary grain boundary characterization results determined by electron backscatter diffraction (EBSD) are included. These results are also important for future fission product transport studies, as grain boundary diffusion is identified as a possible mechanism by which 110mAg, one of the fission activation products, might be released through intact SiC layers. Temperature is a parameter known to influence the grain size of SiC and therefore it is important to investigate the effect of high temperature annealing on the SiC grain size. Recommendations and future work will also be briefly discussed.

  19. Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

    SciTech Connect (OSTI)

    Altuntas, Halit E-mail: biyikli@unam.bilkent.edu.tr; Ozgit-Akgun, Cagla; Donmez, Inci; Biyikli, Necmi E-mail: biyikli@unam.bilkent.edu.tr

    2015-04-21

    Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200?°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2–21.5 MV/m), Schottky emission (23.6–39.5 MV/m), Frenkel-Poole emission (63.8–211.8 MV/m), trap-assisted tunneling (226–280 MV/m), and Fowler-Nordheim tunneling (290–447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.

  20. Transport Survey 2008 (Staff and student)

    E-Print Network [OSTI]

    Burton, Geoffrey R.

    Transport Survey 2008 (Staff and student) April 2008 Ramon Arigoni Ortiz Wan-Jung Chou Department................................................................................................6 2. Transport use and travel behaviour......................................................................10 2.1. Modes of transport

  1. co2-transport | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transport Cost Model FENETL CO2 Transport Cost Model About the model: This model was developed to estimate the cost of transporting a user-specified mass rate of CO2 by pipeline...

  2. Anomalous transport through porous and fractured media

    E-Print Network [OSTI]

    Kang, Peter Kyungchul

    2014-01-01

    Anomalous transport, understood as the nonlinear scaling with time of the mean square displacement of transported particles, is observed in many physical processes, including contaminant transport through porous and fractured ...

  3. Transportes em Revista.com Pas: Portugal

    E-Print Network [OSTI]

    Instituto de Sistemas e Robotica

    Transportes em Revista.com País: Portugal Period.: Diária Âmbito: Online Pag.: 1 de 2ID: 44168021 10-10-2012 Receba gr átis a Transportes Online | Assinar a Transportes em Revista | Fazer da TR a sua

  4. Unraveling siRNA Unzipping Kinetics with Graphene

    E-Print Network [OSTI]

    Santosh Mogurampelly; Swati Panigrahi; Dhananjay Bhattacharyya; A. K. Sood; Prabal K. Maiti

    2012-07-19

    Using all atom molecular dynamics simulations, we report spontaneous unzipping and strong binding of small interfering RNA (siRNA) on graphene. Our dispersion corrected density functional theory based calculations suggest that nucleosides of RNA have stronger attractive interactions with graphene as compared to DNA residues. These stronger interactions force the double stranded siRNA to spontaneously unzip and bind to the graphene surface. Unzipping always nucleates at one end of the siRNA and propagates to the other end after few base-pairs get unzipped. While both the ends get unzipped, the middle part remains in double stranded form because of torsional constraint. Unzipping probability distributions fitted to single exponential function give unzipping time (t) of the order of few nanoseconds which decrease exponentially with temperature. From the temperature variation of unzipping time we estimate the energy barrier to unzipping.

  5. Fabrication of large area Si cylindric drift detectors

    SciTech Connect (OSTI)

    Chen, W.; Kraner, H.W.; Li, Z.; Rehak, P. [Brookhaven National Lab., Upton, NY (United States); Hess, F. [Heidelberg Univ. (Germany). Dept. of Physics

    1993-04-01

    Advanced Si drift detector, a large area cylindrical drift detector (CDD), processing steps, with the exception of the ion implantation, were carried out in the BNL class 100 cleanroom. The double-side planer process technique was developed for the fabrication of CDD. Important improvements of the double-side planer process in this fabrication are the introduction of Al implantation protection mask and the remaining of a 1000 Angstroms oxide layer in the p-window during the implantation. Another important design of the CDD is the structure called ``river,`` which ,allows the current generated on Si-SiO{sub 2} interface to ``flow`` into the guard anode, and thus can minimize the leakage current at the signed anode. The test result showed that most of the signal anodes have the leakage current about 0.3 nA/cm{sup 2} for the best detector.

  6. Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)

    SciTech Connect (OSTI)

    Sitaputra, W. [Department of Physics and Optical Science, University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States); Tsu, R. [Department of Physics and Optical Science, University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States); Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States)

    2012-11-26

    Growth of predominantly single crystal (100)-oriented gadolinium oxide (Gd{sub 2}O{sub 3}) on a p-type Si(100) and growth of a polycrystal with a predominant Gd{sub 2}O{sub 3}(100) crystallite on a n-type Si(100) was performed using molecular beam epitaxy. Despite a poorer crystal structure than Gd{sub 2}O{sub 3}(110), an enhancement in carrier mobility can be found only from the Gd{sub 2}O{sub 3}(100)/n-type Si(100) interface. The mobility of 1715-1780 cm{sup 2}/V {center_dot} s was observed at room temperature, for carrier concentration >10{sup 20} cm{sup -3}. This accumulation of the electrons and the mobility enhancement may arise from the two-dimensional confinement due to charge transfer across the interface similar to transfer doping.

  7. Transport Protocol Services (TAPS) Problem: more and more transport protocols available, with various features,

    E-Print Network [OSTI]

    Welzl, Michael

    Transport Protocol Services (TAPS) · Problem: more and more transport protocols that would not offer "TCP or UDP" but "transport services" ­ A transport system: transport-services@ifi.uio.no hXps://sympa.uio.no/ifi.uio.no/info/transport-services · Problem

  8. California’s Energy Future: Transportation Energy Use in California

    E-Print Network [OSTI]

    Yang, Christopher; Ogden, Joan M; Hwang, Roland; Sperling, Daniel

    2011-01-01

    truck activity in California. Transport Policy. Volume 16,in California Travel Demand Reductions Decreasing transportCalifornia, USA. Transportation Research, Part D: Transport

  9. N-V{sub Si}-related center in non-irradiated 6H SiC nanostructure

    SciTech Connect (OSTI)

    Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii; Klyachkin, Leonid; Malyarenko, Anna; Kalabukhova, Ekaterina; Shanina, Bella; Savchenko, Dariya

    2014-02-21

    We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the ?-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the ?-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the {sup 14}N nucleus allow us to attribute this triplet center to the N-V{sub Si} defect.

  10. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  11. Essays on Urban Transportation and Transportation Energy Policy

    E-Print Network [OSTI]

    Kim, Chun Kon

    2008-01-01

    E?ects of Transportation Energy policy on Tra?c Crashes .e?ciency standards. Energy Policy, 33(3), 407–419. Blincoe,what’s necessary? Energy Policy, 34(9), 971–974. Bose, R.

  12. An ultra-thin buffer layer for Ge epitaxial layers on Si

    SciTech Connect (OSTI)

    Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)

    2013-03-25

    Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

  13. Environment-Assisted Quantum Transport

    E-Print Network [OSTI]

    Patrick Rebentrost; Masoud Mohseni; Ivan Kassal; Seth Lloyd; Alán Aspuru-Guzik

    2009-02-10

    Transport phenomena at the nanoscale are of interest due to the presence of both quantum and classical behavior. In this work, we demonstrate that quantum transport efficiency can be enhanced by a dynamical interplay of the system Hamiltonian with pure dephasing induced by a fluctuating environment. This is in contrast to fully coherent hopping that leads to localization in disordered systems, and to highly incoherent transfer that is eventually suppressed by the quantum Zeno effect. We study these phenomena in the Fenna-Matthews-Olson protein complex as a prototype for larger photosynthetic energy transfer systems. We also show that disordered binary tree structures exhibit enhanced transport in the presence of dephasing.

  14. Momentum Transport in Granular Flows

    E-Print Network [OSTI]

    Gregg Lois; Anael Lemaitre; Jean M. Carlson

    2006-02-10

    We investigate the error induced by only considering binary collisions in the momentum transport of hard-sphere granular materials, as is done in kinetic theories. In this process, we first present a general microscopic derivation of the momentum transport equation and compare it to the kinetic theory derivation, which relies on the binary collision assumption. These two derivations yield different microscopic expressions for the stress tensor, which we compare using simulations. This provides a quantitative bound on the regime where binary collisions dominate momentum transport and reveals that most realistic granular flows occur in the region of phase space where the binary collision assumption does not apply.

  15. Quantum transport through aromatic molecules

    SciTech Connect (OSTI)

    Ojeda, J. H.; Rey-González, R. R.; Laroze, D.

    2013-12-07

    In this paper, we study the electronic transport properties through aromatic molecules connected to two semi-infinite leads. The molecules are in different geometrical configurations including arrays. Using a nearest neighbor tight-binding approach, the transport properties are analyzed into a Green's function technique within a real-space renormalization scheme. We calculate the transmission probability and the Current-Voltage characteristics as a function of a molecule-leads coupling parameter. Our results show different transport regimes for these systems, exhibiting metal-semiconductor-insulator transitions and the possibility to employ them in molecular devices.

  16. Turbulence Induced Transport in Tokamaks

    SciTech Connect (OSTI)

    Caldas, I. L.; Marcus, F. A.; Heller, M. V. A. P.; Guimaraes-Filho, Z. O. [Instituto de Fisica, Universidade de Sao Paulo, Caixa Postal 66318, 05315-970, Sao Paulo, SP (Brazil); Batista, A. M. [Departamento de Matematica e Estatistica, Universidade Estadual de Ponta Grossa, Ponta Grossa, PR (Brazil); Viana, R. L.; Lopes, S. R. [Departamento de Fisica, Universidade Federal do Parana, 81531-990, Curitiba, PR (Brazil); Morrison, P. J.; Horton, W. [Department of Physics, University of Texas at Austin, Austin, Texas, 78712 (United States); Institute for Fusion Studies, The University of Texas at Austin, Austin, Texas, 78712 (United States)

    2006-12-04

    This report is concerned with plasma edge turbulence and its relation to anomalous particle transport in tokamaks. First, experimental evidence of turbulence driven particle transport and measurements of the gradients of the equilibrium profiles in the Brazilian tokamaks TBR and TCABR are presented. Next, diffusion in a two drift-wave system is discussed. In this nonintegrable system, particle transport is associated with the onset of chaotic orbits. Finally, numerical evidence suggesting that a nonlinear three-mode interaction could contribute to the intermittent plasma fluctuations observed in tokamaks is presented.

  17. Synthesis of SiO{sub 2}/?-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

    SciTech Connect (OSTI)

    Zhang, Zhikun; Bi, Kaifeng; Liu, Yanhong; Qin, Fuwen; Liu, Hongzhu; Bian, Jiming; Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050 ; Zhang, Dong; Miao, Lihua; Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034

    2013-11-18

    ?-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown ?-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/?-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level.

  18. UFD Storage and Transportation - Transportation Working Group Report

    SciTech Connect (OSTI)

    Maheras, Steven J.; Ross, Steven B.

    2011-08-01

    The Used Fuel Disposition (UFD) Transportation Task commenced in October 2010. As its first task, Pacific Northwest National Laboratory (PNNL) compiled a list of structures, systems, and components (SSCs) of transportation systems and their possible degradation mechanisms during extended storage. The list of SSCs and the associated degradation mechanisms [known as features, events, and processes (FEPs)] were based on the list of used nuclear fuel (UNF) storage system SSCs and degradation mechanisms developed by the UFD Storage Task (Hanson et al. 2011). Other sources of information surveyed to develop the list of SSCs and their degradation mechanisms included references such as Evaluation of the Technical Basis for Extended Dry Storage and Transportation of Used Nuclear Fuel (NWTRB 2010), Transportation, Aging and Disposal Canister System Performance Specification, Revision 1 (OCRWM 2008), Data Needs for Long-Term Storage of LWR Fuel (EPRI 1998), Technical Bases for Extended Dry Storage of Spent Nuclear Fuel (EPRI 2002), Used Fuel and High-Level Radioactive Waste Extended Storage Collaboration Program (EPRI 2010a), Industry Spent Fuel Storage Handbook (EPRI 2010b), and Transportation of Commercial Spent Nuclear Fuel, Issues Resolution (EPRI 2010c). SSCs include items such as the fuel, cladding, fuel baskets, neutron poisons, metal canisters, etc. Potential degradation mechanisms (FEPs) included mechanical, thermal, radiation and chemical stressors, such as fuel fragmentation, embrittlement of cladding by hydrogen, oxidation of cladding, metal fatigue, corrosion, etc. These degradation mechanisms are discussed in Section 2 of this report. The degradation mechanisms have been evaluated to determine if they would be influenced by extended storage or high burnup, the need for additional data, and their importance to transportation. These categories were used to identify the most significant transportation degradation mechanisms. As expected, for the most part, the transportation importance was mirrored by the importance assigned by the UFD Storage Task. A few of the more significant differences are described in Section 3 of this report

  19. Texarkana Urban Transportation Study 2035 Metropolitan Transportation Plan 

    E-Print Network [OSTI]

    Texarkana Metropolitan Planning Organization

    2009-10-01

    And Local Resource Agencies 1-7 Inclusion of Indian Tribes in the Transportation Process 1-8 2 SOCIO-ECONOMIC DATA 5 ROADS & BRIDGES Population Data 2-1 Road Performance 5-1 Housing Data 2... to increased motor fuels taxes or alternative revenue sources 4. Decaying infrastructure 5. Increasing demand for new infrastructure and access to alternative modes Starting with the Intermodal Surface Transportation Act of 1991 (ISTEA), the regulatory...

  20. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  1. SiG Solar GmbH | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity for LowInformationShoshone County,Si Brilliant TechnologySiG

  2. IMPROVED pc-Si p-LAYER AND a-Si i-LAYER MATERIALS USING VHF PLASMA X. Deng, S. J. Jones, T. Liu, M. Izu and S. R. Ovshinsky

    E-Print Network [OSTI]

    Deng, Xunming

    IMPROVED pc-Si p-LAYER AND a-Si i-LAYER MATERIALS USING VHF PLASMA DEPOSITION X. Deng, S. J. Jones, Michigan 48084 ABSTRACT Microcrystalline Si p-layers have been widely used in a-Si solar cell technology of high quality pc-Si p-layer material using a modified very high frequency (VHF) plasma enhanced CVD

  3. Transportation Issues and Resolutions Compilation of Laboratory...

    Office of Environmental Management (EM)

    of cladding (embrittled, high burnup cladding, loads applied to cladding during transport), criticality analyses of failed UNF within transport packages, moderator exclusion...

  4. Anomalous energy transport across topological insulator superconductor...

    Office of Scientific and Technical Information (OSTI)

    Anomalous energy transport across topological insulator superconductor junctions Citation Details In-Document Search Title: Anomalous energy transport across topological insulator...

  5. Coal Gasification and Transportation Fuels Magazine

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Coal Gasification and Transportation Fuels Magazine Current Edition: Coal Gasification and Transportation Fuels Quarterly News, Vol.1, Issue 4 (July 2015) Archived Editions: Coal...

  6. Nearly 200 Attend National Transportation Stakeholders Forum...

    Office of Environmental Management (EM)

    national transportation coordination. BUFFALO, N.Y. - In his keynote address at the fourth-annual DOE National Transportation Stakeholders Forum (NTSF) meeting, EM Senior...

  7. Spring 2015 National Transportation Stakeholders Forum Meeting...

    Broader source: Energy.gov (indexed) [DOE]

    Spring 2015 National Transportation Stakeholders Forum Meeting, New Mexico The Spring 2015 meeting of the National Transportation Stakeholders Forum will be held on May 12-14, 2015...

  8. Transportation Equipment (2010 MECS) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Equipment (2010 MECS) Transportation Equipment (2010 MECS) Manufacturing Energy and Carbon Footprint for Transportation Equipment Sector (NAICS 336) Energy use data source:...

  9. Transportation Safeguards & Security Test Bed (TSSTB) | ORNL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transportation Safeguards and Security Test Bed May 30, 2013 The Transportation Safeguards and Security Test Bed consists of a test-bed vehicle and a monitoringlaboratorytraining...

  10. Standardization of Transport Properties Measurements: Internal...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Standardization of Transport Properties Measurements: Internal Energy Agency (IEA-AMT) Annex on Thermoelectric Standardization of Transport Properties Measurements: Internal Energy...

  11. We're All Transportation Planners

    E-Print Network [OSTI]

    Curry, Melanie

    2006-01-01

    transportation ment, has had some success in London’sLondon, offering our individual contribution to them. obser vations on current transportation

  12. Vehicle Technologies Office Merit Review 2015: Transportation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transportation Energy Data Book, Vehicle Technologies Market Report, and VT Fact of the Week Vehicle Technologies Office Merit Review 2015: Transportation Energy Data Book, Vehicle...

  13. Vehicle Technologies Office Merit Review 2014: Transportation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transportation Energy Data Book, Vehicle Technologies Market Report, and VT Fact of the Week Vehicle Technologies Office Merit Review 2014: Transportation Energy Data Book, Vehicle...

  14. Department of Transportation Pipeline and Hazardous Materials...

    Office of Environmental Management (EM)

    Conroy U S Department of Transportation - 1 - U.S. Department of Transportation Pipeline and Hazardous Materials Safety Administration Office of Hazardous Materials Safety...

  15. QER - Comment of Electric Drive Transportation Association |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Drive Transportation Association QER - Comment of Electric Drive Transportation Association From: Genevieve Cullen gcullen@electricdrive.org Sent: Friday, October 10, 2014 11:58...

  16. EM Waste and Materials Disposition & Transportation

    Office of Environmental Management (EM)

    On Closure Success 1 EM Waste and Materials Disposition & Transportation National Transportation Stakeholders Forum Chicago, Illinois May 26, 2010 Frank Marcinowski Acting Chief...

  17. Assembly and electrical transport characterization of nanostructures...

    Office of Scientific and Technical Information (OSTI)

    Conference: Assembly and electrical transport characterization of nanostructures. Citation Details In-Document Search Title: Assembly and electrical transport characterization of...

  18. EM Waste and Materials Disposition & Transportation | Department...

    Office of Environmental Management (EM)

    & Transportation EM Waste and Materials Disposition & Transportation DOE's Radioactive Waste Management Priorities: Continue to manage waste inventories in a safe and compliant...

  19. Seamless Transport Policy: Institutional and Regulatory Aspects...

    Open Energy Info (EERE)

    Seamless Transport Policy: Institutional and Regulatory Aspects of Inter-Modal Coordination Jump to: navigation, search Tool Summary LAUNCH TOOL Name: Seamless Transport Policy:...

  20. Spring 2013 National Transportation Stakeholders Forum Meeting...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Stakeholders Forum Spring 2013 National Transportation Stakeholders Forum Meeting, New York Spring 2013 National Transportation Stakeholders Forum Meeting, New York Spring...

  1. Mitochondrial Transport and Function in Axon Degeneration

    E-Print Network [OSTI]

    O'Donnell, Kelley

    2013-01-01

    OF CALIFORNIA Los Angeles Mitochondrial Transport andTransport and Function in Axon Degeneration by Kelley O’Donnell Doctor of Philosophy in Neuroscience University of California,

  2. Transportation and Stationary Power Integration Workshop Agenda...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Agenda, October 27, 2008, Phoenix, Arizonia Transportation and Stationary Power Integration Workshop Agenda, October 27, 2008, Phoenix, Arizonia Agenda for the Transportation and...

  3. Transportation, Aging and Disposal Canister System Performance...

    Broader source: Energy.gov (indexed) [DOE]

    document provides specifications for selected system components of the Transportation, Aging and Disposal (TAD) canister-based system. Transportation, Aging and Disposal Canister...

  4. Macrobiotic Vertical Transport of Litter Derived Carbon

    E-Print Network [OSTI]

    Post, Wilfred M.

    Macrobiotic Vertical Transport of Litter Derived Carbon (Earthworm Phase) Mac Callaham Corey Babb in each treatment Sampling #12;Macrobiotic Vertical Transport of Litter Derived Carbon (millipede phase

  5. Seasonality in air transportation demand

    E-Print Network [OSTI]

    Reichard Megwinoff, H?tor Nicolas

    1988-01-01

    This thesis investigates the seasonality of demand in air transportation. It presents three methods for computing seasonal indices. One of these methods, the Periodic Average Method, is selected as the most appropriate for ...

  6. Washington: Integrated Transportation Programs & Coordinated...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    trip planner site that pulls together all regional transportation options into one portal. The project has already resulted in a reduction of 5.9 million vehicle miles traveled...

  7. Aerosol penetration through transport lines 

    E-Print Network [OSTI]

    Dileep, V.R.

    1996-01-01

    It is very important to minimize the losses in aerosol transport systems for the Continuous Air Monitors (CAM) to have a prompt and a meaningful alarm and the U.S. Environmental Protection Agency (EPA) also Currently mandates continuous emissions...

  8. Lithium diffusion at Si-C interfaces in silicon-graphene composites

    SciTech Connect (OSTI)

    Odbadrakh, Khorgolkhuu [Joint Institute for Computational Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); McNutt, N. W. [Department of Chemical and Biomolecular Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States); Nicholson, D. M. [Computational Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Department of Physics, University of North Carolina, Asheville, North Carolina 28804 (United States); Rios, O. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Keffer, D. J. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)

    2014-08-04

    Models of intercalated Li and its diffusion in Si-Graphene interfaces are investigated using density functional theory. Results suggest that the presence of interfaces alters the energetics of Li binding and diffusion significantly compared to bare Si or Graphene surfaces. Our results show that cavities along reconstructed Si surface provide diffusion paths for Li. Diffusion barriers calculated along these cavities are significantly lower than penetration barriers to bulk Si. Interaction with Si surface results in graphene defects, creating Li diffusion paths that are confined along the cavities but have still lower barrier than in bulk Si.

  9. Light harvesting with Ge quantum dots embedded in SiO{sub 2} or Si{sub 3}N{sub 4}

    SciTech Connect (OSTI)

    Cosentino, Salvatore Raciti, Rosario; Simone, Francesca; Crupi, Isodiana; Terrasi, Antonio; Mirabella, Salvo; Sungur Ozen, Emel; Aydinli, Atilla; Mio, Antonio M.; Nicotra, Giuseppe; Turan, Rasit

    2014-01-28

    Germanium quantum dots (QDs) embedded in SiO{sub 2} or in Si{sub 3}N{sub 4} have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850?°C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 3–9?nm range in the SiO{sub 2} matrix, or in the 1–2?nm range in the Si{sub 3}N{sub 4} matrix, as measured by transmission electron microscopy. Thus, Si{sub 3}N{sub 4} matrix hosts Ge QDs at higher density and more closely spaced than SiO{sub 2} matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si{sub 3}N{sub 4} matrix in comparison with those in the SiO{sub 2} host. Light absorption by Ge QDs is shown to be more effective in Si{sub 3}N{sub 4} matrix, due to the optical bandgap (0.9–1.6?eV) being lower than in SiO{sub 2} matrix (1.2–2.2?eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si{sub 3}N{sub 4} matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices.

  10. Impact of SiC Power Electronic Devices for Hybrid Electric Vehicles Leon M. Tolbert1,2

    E-Print Network [OSTI]

    Tolbert, Leon M.

    of these systems is approaching the theoretical limits of the Si fundamental material properties. The emergence As mentioned earlier, SiC is a wide-bandgap semiconductor, and this property of SiC is expected to yield properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have

  11. Improved red-response in thin film a-Si:H solar cells with soft-imprinted plasmonic back reflectors

    E-Print Network [OSTI]

    Polman, Albert

    Improved red-response in thin film a-Si:H solar cells with soft-imprinted plasmonic back reflectors is a critical component of solar cell development. In typical thin film cells the thickness of the absorbing of photovoltaic power. Thin film Si solar cells using hydrogenated amorphous Si a-Si:H and nano- crystalline Si nc

  12. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S.; Kodera, T.; Takeda, K.; Obata, T.; Tarucha, S.

    2014-05-28

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  13. Transportation scenarios for risk analysis.

    SciTech Connect (OSTI)

    Weiner, Ruth F.

    2010-09-01

    Transportation risk, like any risk, is defined by the risk triplet: what can happen (the scenario), how likely it is (the probability), and the resulting consequences. This paper evaluates the development of transportation scenarios, the associated probabilities, and the consequences. The most likely radioactive materials transportation scenario is routine, incident-free transportation, which has a probability indistinguishable from unity. Accident scenarios in radioactive materials transportation are of three different types: accidents in which there is no impact on the radioactive cargo, accidents in which some gamma shielding may be lost but there is no release of radioactive material, and accident in which radioactive material may potentially be released. Accident frequencies, obtainable from recorded data validated by the U.S. Department of Transportation, are considered equivalent to accident probabilities in this study. Probabilities of different types of accidents are conditional probabilities, conditional on an accident occurring, and are developed from event trees. Development of all of these probabilities and the associated highway and rail accident event trees are discussed in this paper.

  14. Apparatus for transporting hazardous materials

    DOE Patents [OSTI]

    Osterman, Robert A. (Canonsburg, PA); Cox, Robert (West Mifflin, PA)

    1992-01-01

    An apparatus and method are provided for selectively receiving, transporting, and releasing one or more radioactive or other hazardous samples for analysis on a differential thermal analysis (DTA) apparatus. The apparatus includes a portable sample transporting apparatus for storing and transporting the samples and includes a support assembly for supporting the transporting apparatus when a sample is transferred to the DTA apparatus. The transporting apparatus includes a storage member which includes a plurality of storage chambers arrayed circumferentially with respect to a central axis. An adjustable top door is located on the top side of the storage member, and the top door includes a channel capable of being selectively placed in registration with the respective storage chambers thereby permitting the samples to selectively enter the respective storage chambers. The top door, when closed, isolates the respective samples within the storage chambers. A plurality of spring-biased bottom doors are located on the bottom sides of the respective storage chambers. The bottom doors isolate the samples in the respective storage chambers when the bottom doors are in the closed position. The bottom doors permit the samples to leave the respective storage chambers from the bottom side when the respective bottom doors are in respective open positions. The bottom doors permit the samples to be loaded into the respective storage chambers after the analysis for storage and transport to a permanent storage location.

  15. Alcohol Transportation Fuels Demonstration Program

    SciTech Connect (OSTI)

    Kinoshita, C.M. (ed.)

    1990-01-01

    Hawaii has abundant natural energy resources, especially biomass, that could be used to produce alternative fuels for ground transportation and electricity. This report summarizes activities performed during 1988 to June 1991 in the first phase of the Alcohol Transportation Fuels Demonstration Program. The Alcohol Transportation Fuels Demonstration Program was funded initially by the Energy Division of the State of Hawaii's Department of Business, Economic Development and Tourism, and then by the US Department of Energy. This program was intended to support the transition to an altemative transportation fuel, methanol, by demonstrating the use of methanol fuel and methanol-fueled vehicles, and solving the problems associated with that fuel. Specific objectives include surveying renewable energy resources and ground transportation in Hawaii; installing a model methanol fueling station; demonstrating a methanol-fueled fleet of (spark-ignition engine) vehicles; evaluating modification strategies for methanol-fueled diesel engines and fuel additives; and investigating the transition to methanol fueling. All major objectives of Phase I were met (survey of local renewable resources and ground transportation, installation of methanol refueling station, fleet demonstration, diesel engine modification and additive evaluation, and dissemination of information on alternative fueling), and some specific problems (e.g., relating to methanol fuel contamination during handling and refueling) were identified and solved. Several key issues emerging from Phase I (e.g., methanol corrosion, flame luminosity, and methanol-transition technoeconomics) were recommended as topics for follow-on research in subsequent phases of this program.

  16. Uranium Transport Modeling

    SciTech Connect (OSTI)

    Bostick, William D.

    2008-01-15

    Uranium contamination is prevalent at many of the U.S. DOE facilities and at several civilian sites that have supported the nuclear fuel cycle. The potential off-site mobility of uranium depends on the partitioning of uranium between aqueous and solid (soil and sediment) phases. Hexavalent U (as uranyl, UO{sub 2}{sup 2+}) is relatively mobile, forming strong complexes with ubiquitous carbonate ion which renders it appreciably soluble even under mild reducing conditions. In the presence of carbonate, partition of uranyl to ferri-hydrate and select other mineral phases is usually maximum in the near-neutral pH range {approx} 5-8. The surface complexation reaction of uranyl with iron-containing minerals has been used as one means to model subsurface migration, used in conjunction with information on the site water chemistry and hydrology. Partitioning of uranium is often studied by short-term batch 'equilibrium' or long-term soil column testing ; MCLinc has performed both of these methodologies, with selection of method depending upon the requirements of the client or regulatory authority. Speciation of uranium in soil may be determined directly by instrumental techniques (e.g., x-ray photoelectron spectroscopy, XPS; x-ray diffraction, XRD; etc.) or by inference drawn from operational estimates. Often, the technique of choice for evaluating low-level radionuclide partitioning in soils and sediments is the sequential extraction approach. This methodology applies operationally-defined chemical treatments to selectively dissolve specific classes of macro-scale soil or sediment components. These methods recognize that total soil metal inventory is of limited use in understanding bioavailability or metal mobility, and that it is useful to estimate the amount of metal present in different solid-phase forms. Despite some drawbacks, the sequential extraction method can provide a valuable tool to distinguish among trace element fractions of different solubility related to mineral phases. Four case studies are presented: Water and Soil Characterization, Subsurface Stabilization of Uranium and other Toxic Metals, Reductive Precipitation (in situ bioremediation) of Uranium, and Physical Transport of Particle-bound Uranium by Erosion.

  17. PyRolySiSfoRBiofuel Summary of technology

    E-Print Network [OSTI]

    Mucina, Ladislav

    PyRolySiSfoRBiofuel Summary of technology Increasing global energy requirements demand new biomass conversion methods are inefficient. researchers at curtin university's fuels and energy Technology Institute (feTI) have developed an innovative technology that rapidly and efficiently converts biomass

  18. igh-dielectricshavebeenactivelypursuedtoreplaceSiO2 asgate insulatorsforsilicondevices1

    E-Print Network [OSTI]

    McEuen, Paul L.

    with advanced gate dielectrics may open a new route to advanced miniature field- effectdevices. Single gates with SiO2 dielectrics18 and electrochemical gates with an aqueous electrolyte solution obtained by annealing the devices in hydrogen exhibit S ~ 90 mV per decade. High voltage gains of up to 60

  19. Local structure order in Pd??Cu?Si?? liquid

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yue, G. Q.; Iowa State Univ., Ames, IA; Zhang, Y.; Sun, Y.; Shen, B.; Dong, F.; Wang, Z. Y.; Zhang, R. J.; Zheng, Y. X.; Kramer, M. J.; et al

    2015-02-05

    The short-range order (SRO) in Pd??Cu?Si?? liquid was studied by high energy x-ray diffraction and ab initio molecular dynamics (MD) simulations. The calculated pair correlation functions at different temperatures agree well with the experimental results. The partial pair correlation functions from ab intio MD simulations indicate that Si atoms prefer to be uniformly distributed while Cu atoms tend to aggregate. By performing structure analysis using Honeycutt-Andersen index, Voronoi tessellation, and atomic cluster alignment method, we show that the icosahedron and face-centered cubic SRO increase upon cooling. The dominant SRO is the Pd-centered Pd?Si? motif, namely the structure of which motifmore »is similar to the structure of Pd-centered clusters in the Pd?Si? crystal. The study further confirms the existence of trigonal prism capped with three half-octahedra that is reported as a structural unit in Pd-based amorphous alloys. The majority of Cu-centered clusters are icosahedra, suggesting that the presence of Cu is benefit to promote the glass forming ability.« less

  20. ON THE PROPAGATION PROPERTIES OF SURFACE V. JAK SI '

    E-Print Network [OSTI]

    of the radio waves around the earth surface. These are the electromagnetic waves that propagate alongON THE PROPAGATION PROPERTIES OF SURFACE WAVES V. JAK Ÿ SI ' C \\Lambda , S. MOLCHANOV y AND L. PASTUR z 1. Introduction. Surface waves were discovered by Rayleigh at the end of the last century [1

  1. A Peltier cooling system for SiPM temperature stabilization

    E-Print Network [OSTI]

    Hebbeker, Thomas

    A Peltier cooling system for SiPM temperature stabilization von Simon Nieswand Bachelorarbeit außen thermisch isolierten Kupferblockes einzulassen, an welchen ein Peltier-Element angebracht wird. Um das System zu automatisieren, werden der Temperatursensor und die Stromquelle des Peltier- Elements

  2. Vapor Phase Synthesis and Characterization of -FeSi Nanowires

    E-Print Network [OSTI]

    Walsworth, Ronald L.

    Vapor Phase Synthesis and Characterization of - FeSi Nanowires Lian Ouyang, Elizabeth S. Thrall, Mandar M. Deshmukh, and Hongkun Park Over the past decade, one-dimensional inorganic nanostructures have emerged as promising materials for fundamental studies and possible technological applications.[1

  3. Luminescence properties of the hybrid Si-Ni nanoparticles system

    E-Print Network [OSTI]

    Lalayan, A A; Movsesyan, H A

    2015-01-01

    The luminescence properties of the colloidal hybrid Si - Ni nanoparticles system fabricated in the pure water by pulsed laser ablation is considered. The red-shifted photoluminescence of this system because of the Stark effect in the Coulomb field of the charged Ni nanoparticles has been registered in the blue range of the spectrum.

  4. MS Exam, Spring 2014, Solid State Electronics (ECE 103) 5. (15 points, 3 points each) 1. The energy band diagram for a p-Si/SiO2/n-Si capacitor

    E-Print Network [OSTI]

    California at San Diego, University of

    MS Exam, Spring 2014, Solid State Electronics (ECE 103) 5. (15 points, 3 points each) 1. The energy band diagram for a p-Si/SiO2/n-Si capacitor (SOS-C) under flat-band conditions is given below. The SOS to the device. (c) Same as (b) except now a large negative voltage is applied to the gate. #12;MS Exam, Spring

  5. ENERGY TRANSPORT IN SEMICONDUCTOR DEVICES ANSGAR JUNGEL

    E-Print Network [OSTI]

    Jüngel, Ansgar

    ENERGY TRANSPORT IN SEMICONDUCTOR DEVICES ANSGAR J¨UNGEL Abstract. The modeling, analysis, and numerical approximation of energy-transport models for semiconductor devices is reviewed. The derivation-dependent energy-transport equations with physical transport coefficients. The discretization of the stationary

  6. Anomalous radial transport in tokamak edge plasma

    E-Print Network [OSTI]

    Bodi, Vasudeva Raghavendra Kowsik

    2010-01-01

    Transport in tokamak plasma . . . . . . . . . . . . . . .Numerical simulations of tokamak plasma . . . . . . . . .of blobs in tokamak edge plasmas . . . . . . . . . . . . . .

  7. Biofuel Feedstock Inter-Island Transportation

    E-Print Network [OSTI]

    of Honolulu Advertiser ISO Tank Container, courtesy of Hawaii Intermodal Tank Transport Petroleum products

  8. Public Transport and Sustainable Urbanism: Global Lesson

    E-Print Network [OSTI]

    Cervero, Robert

    2006-01-01

    Public Transport and Sustainable Urbanism: Global Lessonsviable and sustainable form of urbanism. Notes J. Kenworthy

  9. Pion capture and transport system for PRISM

    E-Print Network [OSTI]

    McDonald, Kirk

    solenoid cold mass Transport pions+muons in long 2T solenoid channelPion capture and transport system for PRISM M. Yoshida Osaka Univ. 2005/8/28 NuFACT06 at UCI #12 and transport system proton beam Phase rotator PRIME detector #12;Concepts of pion capture/transport system

  10. A Ge-on-Si laser for electronic-photonic integration

    E-Print Network [OSTI]

    Sun, Xiaochen

    We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects ...

  11. Unconventional behavior of the Ce3Pt23Si11 ferromagnet C. Opagiste,1,

    E-Print Network [OSTI]

    Boyer, Edmond

    23Si11 is in equilibrium with the non-centrosymetric heavy fermion superconductor CePt3Si, when and presents a heavy fermion supercon- ducting state at Tc = 750 mK. Many studies on the superconductivity

  12. IEffect of carbonization on the growth of 3C-Sic on Si (111) by silacyclobutane

    E-Print Network [OSTI]

    Cincinnati, University of

    the explora- tion of the integration of Sic device with Si technology. Most previously reported deposition. In preparation for Sic growth, the Si substrates undergo ex situ cleaning by HF dip. This is followed by ipl situ

  13. Naked Deltahedral Silicon Clusters in Solution: Synthesis and Characterization of Si9

    E-Print Network [OSTI]

    Naked Deltahedral Silicon Clusters in Solution: Synthesis and Characterization of Si9 3- and Si5 2 in extracting the first nine- and five-atom naked clusters of silicon in solution and the structural

  14. Lipopeptide nanoparticles for potent and selective siRNA delivery in rodents and nonhuman primates

    E-Print Network [OSTI]

    Dong, Yizhou

    siRNA therapeutics have promise for the treatment of a wide range of genetic disorders. Motivated by lipoproteins, we report lipopeptide nanoparticles as potent and selective siRNA carriers with a wide therapeutic index. ...

  15. DISLOCATION GENERATION IN Si: A THERMO-MECHANICAL MODEL BASED ON MEASURABLE PARAMETERS*

    E-Print Network [OSTI]

    Balzar, Davor

    DISLOCATION GENERATION IN Si: A THERMO-MECHANICAL MODEL BASED ON MEASURABLE PARAMETERS* Bhushan for predicting dislocation distribution generated by thermal stresses in Si is described. We use that can minimize dislocation generation for improved solar cell performance. INTRODUCTION Dislocations

  16. PID Failure of c-Si and Thin-Film Modules and Possible Correlation...

    Energy Savers [EERE]

    PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents...

  17. High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process

    E-Print Network [OSTI]

    Lin, Hsin-Chang

    2015-01-01

    1.3 Millimeter-Wave Signal Generation 1.4 ThesisPower Millimeter-Wave Signal Generation in Advanced SiGe andPower Millimeter-Wave Signal Generation in Advanced SiGe and

  18. Direct Visualization of Spray and Combustion Inside a DI-SI Engine...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Visualization of Spray and Combustion Inside a DI-SI Engine and Its Implications to Flex-Fuel VVT Operations Direct Visualization of Spray and Combustion Inside a DI-SI Engine and...

  19. XP-SiC: An Innovative Substrate for Future Applications with...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    XP-SiC: An Innovative Substrate for Future Applications with Low Weight and High Porosity XP-SiC: An Innovative Substrate for Future Applications with Low Weight and High Porosity...

  20. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    SciTech Connect (OSTI)

    Silva, Chinthaka M; Katoh, Yutai; Voit, Stewart L; Snead, Lance Lewis

    2015-01-01

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

  1. Fuel Consumption and NOx Trade-offs on a Port-Fuel-Injected SI...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline Engine Equipped with a Lean-NOx Trap Fuel Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline...

  2. Hydrothermal corrosion of SiC in LWR coolant environments in...

    Office of Scientific and Technical Information (OSTI)

    Article: Hydrothermal corrosion of SiC in LWR coolant environments in the absence of irradiation Citation Details In-Document Search Title: Hydrothermal corrosion of SiC in LWR...

  3. Microstructural Contol of the Porous Si3N4 Ceramics Consisted...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Contol of the Porous Si3N4 Ceramics Consisted of 3-Dimensionally Intermingled Rod-like Grains Microstructural Contol of the Porous Si3N4 Ceramics Consisted of 3-Dimensionally...

  4. Ultrafast optical switching of three-dimensional Si inverse opal photonic band gap crystals

    E-Print Network [OSTI]

    Vos, Willem L.

    Ultrafast optical switching of three-dimensional Si inverse opal photonic band gap crystals Tijmen on three-dimensional photonic band gap crystals. Switching the Si inverse opal is achieved by optically

  5. Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes...

    Office of Scientific and Technical Information (OSTI)

    Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion Batteries: A XANES Study Citation Details In-Document Search Title: Chemical Bonding In Amorphous Si...

  6. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

    SciTech Connect (OSTI)

    Shklyaev, A. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Shegai, O. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Nakamura, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Ichikawa, M. [Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-28

    Photoconductivity (PC) of Si/Ge structures with Ge quantum dots (QDs) grown on the Si(100) surfaces covered with the ultrathin, about 0.3–0.5?nm thick, SiO{sub 2} films is studied as a function of the interband light intensity under various lateral voltages. The structures exhibit PC with steps and a step with a peak at the step edge for low- and high-temperature grown structures, respectively. These PC features are associated with the impact ionization of QD-related excitons. The PC at step edges increases by several orders of magnitude for a certain value which is governed by the balance between rates of photo-generation, recombination, and impact ionization of excitons. The electron localization deeper in Si from the Ge QD layer in conjunction with a narrow binding-energy distribution of excitons is suggested to be the main reason that provides the sharpness of PC steps. The PC appears to be very sensitive to the impact ionization and QD preparation conditions. This allows revealing the specific characteristics of QD structures, related to their electronic and structural properties.

  7. Development of Solar Grade Silicon (SoG-Si) Feedstock by Recycling SoG-Si Wastes

    SciTech Connect (OSTI)

    Lifeng Zhang; Anping Dong; Lucas Nana Wiredu Damoah

    2013-01-24

    Experiment results of EM separation show that the non-metallic inclusions were successfully pushed to the boundary layer of the crucible under EM force. Larger frequency and smaller current generate smaller thickness of accumulated inclusions. More detailed EM separation experiments are undergoing to investigate the factors that affect the removal efficient of inclusions from SoG-Si

  8. Ag Out-surface Diffusion In Crystalline SiC With An Effective SiO2 Diffusion Barrier

    SciTech Connect (OSTI)

    Xue, H.; Xiao, Haiyan Y.; Zhu, Zihua; Shutthanandan, V.; Snead, Lance L.; Boatner, Lynn A.; Weber, William J.; Zhang, Y.

    2015-09-01

    For applications of tristructural isotropic (TRISO) fuel particles in high temperature reactors, release of radioactive Ag isotope (110mAg) through the SiC coating layer is a safety concern. To understand the diffusion mechanism, Ag ion implantations near the surface and in the bulk were performed by utilizing different ion energies and energy-degrader foils. High temperature annealing was carried out on the as-irradiated samples to study the possible out-surface diffusion. Before and after annealing, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) measurements were employed to obtain the elemental profiles of the implanted samples. The results suggest little migration of buried Ag in the bulk, and an out-diffusion of the implanted Ag in the near-surface region of single crystal SiC. It is also found that a SiO2 layer, which was formed during annealing, may serve as an effective barrier to reduce or prevent Ag out diffusion through the SiC coating layer.

  9. Isotopic Ratios of SiC of Type X and Si 3 This appendix contains the isotopic data for 81 presolar SiC grains of type X and six preso

    E-Print Network [OSTI]

    Nittler, Larry R.

    for 81 presolar SiC grains of type X and six preso­ lar Si 3 N 4 grains, all found by ion imaging (see C 14 N/ 15 N CN \\Gamma /C \\Gamma 26 Al/ 27 Al KJG6L­103­1 SiC ­420 \\Sigma 4 ­480 \\Sigma 8 40.4 +0:7 \\Gamma0:7 55.3 +3:1 \\Gamma2:8 0.124 \\Delta \\Delta \\Delta KJG6L­105­1 SiC ­277 \\Sigma 11 ­404 \\Sigma 9 289

  10. Enhancing Resource Sustainability by Transforming Urban and Suburban Transportation

    E-Print Network [OSTI]

    Delucchi, Mark

    2009-01-01

    Sustainable Transportation, Smart Growth, and New Urbanismsustainable transportation,” “smart growth,” and “new urbanism”

  11. Role of Si/Al Ratio on Immobilization and Stability of Rhodium Complexes on ZSM-5

    E-Print Network [OSTI]

    Long, Brandon

    2009-01-01

    Rhodium complexes within the pores of zeolite ZSM-5 with varying Si/Al ratios (Si/Al 23, Si/Al 50, and Si/Al 280) were prepared from Rh1+(CO)2(C5H7O2), Rh22+(CO2CH3)4, and Rh3+(C5H7O2)3 followed by thermal treatment in He. IR results indicate...

  12. Geometra Hiperblica Si bien la geometra hiperblica se desarroll de manera abstracta en el estudio del

    E-Print Network [OSTI]

    Aíza, Ricardo Gómez

    . Démosles nombres: Un vector x R3 es espacial, si L (x) > 0 ; temporal, si L (x) luz, si L (x) = 0 vectores luz forman el cono sobre S1 en el plano z = 1; los temporales están dentro del cono y los luz. EJERCICIO 8.1 Demuestra que si x no es luz existen exactamente dos vectores unitarios en la recta

  13. Toledo Regional Economic PlanToledo Regional Economic Plan Transportation and LogisticsTransportation and Logistics

    E-Print Network [OSTI]

    Azad, Abdul-Majeed

    Toledo Regional Economic PlanToledo Regional Economic Plan Transportation and LogisticsTransportation and Logistics Industry SectorIndustry Sector Submitted by:Submitted by: Transportation and Logistics Working GroupTransportation and Logistics Working Group September 2009September 2009 #12;22 Transportation

  14. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150?°C for 1?h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301?kJ·mol{sup ?1}) are greater than that of Ge-Ge bonds (264?kJ·mol{sup ?1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  15. Low-voltage broad-band electroabsorption from thin Ge/SiGe

    E-Print Network [OSTI]

    Miller, David A. B.

    Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using

  16. Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping

    E-Print Network [OSTI]

    Rommel, Sean

    Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique D. Pawlik, S. Sieg, S.K. Kurinec, S.L. Rommel, Z. Cheng, J.-S. Park, J. Hydrick and A. Lochtefeld A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2

  17. Sound velocities of Fe and Fe-Si alloy in the Earth's core

    E-Print Network [OSTI]

    Lin, Jung-Fu "Afu"

    , Jackson School of Geosciences, University of Texas at Austin, Austin, TX 78712; b Advanced Photon Source-ray diffraction. The nature of the Fe-Si alloy where Si is readily soluble in Fe repre- sents an ideal solid-solution), silicon (Si), sulfur (S), carbon (C), and hydrogen (H), have been suggested via cosmochemical, geo

  18. Chemical passivity of III-VI bilayer terminated Si,,111... Jonathan A. Adamsa

    E-Print Network [OSTI]

    Olmstead, Marjorie

    Chemical passivity of III-VI bilayer terminated Si,,111... Jonathan A. Adamsa and Aaron A online 17 October 2005 The chemical stability of Si 111 , terminated with bilayer AlSe and GaSe, upon electronic and atomic structure do not imply similar chemical passivity. While Si 111 :GaSe is largely

  19. Damage production and accumulation in SiC structures in inertial and magnetic fusion systems

    E-Print Network [OSTI]

    Ghoniem, Nasr M.

    damage and helium production on defect accumulation in SiC/SiC composites are also discussed. Ó 2010Damage production and accumulation in SiC structures in inertial and magnetic fusion systems M spectrum, and pulsed nature of neutron production result in significant differences in damage parameters

  20. COUPLING BETWEEN MICROSTRIP LINES EMBEDDED IN POLYIMIDE LAYERS FOR 3D-MMICs ON Si

    E-Print Network [OSTI]

    Tentzeris, Manos

    COUPLING BETWEEN MICROSTRIP LINES EMBEDDED IN POLYIMIDE LAYERS FOR 3D-MMICs ON Si George E. Ponchak layers of polyimide are required for constructing Si/SiGe monolithic microwave/millimeter-wave integrated necessitates novel transmission line structures [1] that are typically embedded in polyimide that is deposited

  1. Ab initio study of charge transfer in low energy Si 2+ collisions with atomic hydrogen

    E-Print Network [OSTI]

    Stancil, Phillip C.

    Ab initio study of charge transfer in low energy Si 2+ collisions with atomic hydrogen N J Clarkey Si 2+ (3s 2 1 S) and excited state Si 2+ (3s3p 3 P o ) with atomic hydrogen are presented for energies less than 100 eV amu \\Gamma1 . The cross sections are calculated in a diabatic representation

  2. Modeling and Testing Miniature Torsion Specimens for SiC Joining Development Studies for Fusion

    SciTech Connect (OSTI)

    Henager, Charles H.; Nguyen, Ba Nghiep; Kurtz, Richard J.; Roosendaal, Timothy J.; Borlaug, Brennan A.; Ferraris, Monica; Ventrella, Andrea; Katoh, Yutai

    2015-08-19

    The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. Miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti3SiC2 + SiC joints with CVD-SiC and tested in torsion-shear prior to and after neutron irradiation. However, many of these miniature torsion specimens fail out-of-plane within the CVD-SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated joint strengths to determine the effects of the irradiation. Finite element elastic damage and elastic-plastic damage models of miniature torsion joints are developed that indicate shear fracture is likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated joint test data for a variety of joint materials. The unirradiated data includes Ti3SiC2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. The implications for joint data based on this sample design are discussed.

  3. Aalborg Universitet SiC heat pump converters with support for voltage unbalance in distribution grids

    E-Print Network [OSTI]

    Munk-Nielsen, Stig

    Aalborg Universitet SiC heat pump converters with support for voltage unbalance in distribution (APA): Trintis, I., Douglass, P., Maheshwari, R., & Munk-Nielsen, S. (2015). SiC heat pump converters.aau.dk on: november 29, 2015 #12;SiC heat pump converters with support for voltage unbalance in distribution

  4. Optical gain from the direct gap transition of Ge-on-Si at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

  5. Leakage current and dielectric breakdown behavior in annealed SiO2 aerogel films

    E-Print Network [OSTI]

    Jo, Moon-Ho

    Leakage current and dielectric breakdown behavior in annealed SiO2 aerogel films Moon-Ho Jo behavior in annealed SiO2 aerogel films for intermetal dielectric applications was investigated in a metal­insulator­semiconductor structure. SiO2 aerogel films with porosities of 70% exhibited Poole­Frenkel conduction both before

  6. Galvanic Deposition of Nanoporous Si onto 6061 Al Alloy from Aqueous HF

    E-Print Network [OSTI]

    Suni, Ian Ivar

    is currently dominated by thick film Si solar cells, thin film crystalline, polycrystalline, and amorphous Si from inte- grated circuit manufacturing, thin film Si solar cells provide obvious long-term cost methods for depositing thin film solar cell materials are highly advantageous due to their low cost

  7. Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO{sub 2} substrate as a platform for discriminative gas sensing

    SciTech Connect (OSTI)

    Lipatov, Alexey [Department of Chemistry, University of Nebraska–Lincoln, Lincoln, Nebraska 68588 (United States); Varezhnikov, Alexey; Sysoev, Victor [Department of Physics, Saratov State Technical University, Saratov 410054 (Russian Federation); Augustin, Martin; Sommer, Martin [Institute of Microstructure Technology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Bruns, Michael [Institute for Applied Materials - Energy Storage Systems (IAM-ESS), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Kolmakov, Andrei, E-mail: andrei.kolmakov@nist.gov [Department of Physics, Southern Illinois University, Carbondale, Illinois 62901 (United States); Sinitskii, Alexander, E-mail: sinitskii@unl.edu [Department of Chemistry, University of Nebraska–Lincoln, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska–Lincoln, Lincoln, Nebraska 68588 (United States)

    2014-01-06

    Arrays of nearly identical graphene devices on Si/SiO{sub 2} exhibit a substantial device-to-device variation, even in case of a high-quality chemical vapor deposition (CVD) or mechanically exfoliated graphene. We propose that such device-to-device variation could provide a platform for highly selective multisensor electronic olfactory systems. We fabricated a multielectrode array of CVD graphene devices on a Si/SiO{sub 2} substrate and demonstrated that the diversity of these devices is sufficient to reliably discriminate different short-chain alcohols: methanol, ethanol, and isopropanol. The diversity of graphene devices on Si/SiO{sub 2} could possibly be used to construct similar multisensor systems trained to recognize other analytes as well.

  8. Methods of producing transportation fuel

    DOE Patents [OSTI]

    Nair, Vijay (Katy, TX); Roes, Augustinus Wilhelmus Maria (Houston, TX); Cherrillo, Ralph Anthony (Houston, TX); Bauldreay, Joanna M. (Chester, GB)

    2011-12-27

    Systems, methods, and heaters for treating a subsurface formation are described herein. At least one method for producing transportation fuel is described herein. The method for producing transportation fuel may include providing formation fluid having a boiling range distribution between -5.degree. C. and 350.degree. C. from a subsurface in situ heat treatment process to a subsurface treatment facility. A liquid stream may be separated from the formation fluid. The separated liquid stream may be hydrotreated and then distilled to produce a distilled stream having a boiling range distribution between 150.degree. C. and 350.degree. C. The distilled liquid stream may be combined with one or more additives to produce transportation fuel.

  9. No energy transport without discord

    E-Print Network [OSTI]

    Seth Lloyd; Vazrik Chiloyan; Yongjie Hu; Samuel Huberman; Zi-Wen Liu; Gang Chen

    2015-10-16

    Quantum systems can be correlated in ways that classical systems can not. A wide variety of non-classical forms of correlation exist: amongst the best known are entanglement and discord. Quantum correlations can be used to enhance measurement accuracy and energy transport. This paper shows that quantum correlations -- in the form of discord -- are mandatory for any energy transport. Without discord, energy transport cannot occur. Moreover, we show that the initial rate of heat transfer between two systems prepared at different temperatures is directly proportional to the rate of increase in diagonal/energetic discord between the systems. We measured the increase of energetic discord induced by nanoscale heat flow across an aluminum-sapphire interface. The rate of increase of discord is measured to be 4.28*10^24 bits m^{-2} K^{-1} s^{-1}.

  10. Cavity enhanced transport of excitons

    E-Print Network [OSTI]

    Johannes Schachenmayer; Claudiu Genes; Edoardo Tignone; Guido Pupillo

    2015-05-20

    We show that exciton-type transport in certain materials can be dramatically modified by their inclusion in an optical cavity: the modification of the electromagnetic vacuum mode structure introduced by the cavity leads to transport via delocalized polariton modes rather than through tunneling processes in the material itself. This can help overcome exponential suppression of transmission properties as a function of the system size in the case of disorder and other imperfections. We exemplify massive improvement of transmission for excitonic wave-packets through a cavity, as well as enhancement of steady-state exciton currents under incoherent pumping. These results may have implications for experiments of exciton transport in disordered organic materials. We propose that the basic phenomena can be observed in quantum simulators made of Rydberg atoms, cold molecules in optical lattices, as well as in experiments with trapped ions.

  11. Quantum transport in ultracold atoms

    E-Print Network [OSTI]

    Chih-Chun Chien; Sebastiano Peotta; Massimiliano Di Ventra

    2015-04-11

    Ultracold atoms confined by engineered magnetic or optical potentials are ideal systems for studying phenomena otherwise difficult to realize or probe in the solid state because their atomic interaction strength, number of species, density, and geometry can be independently controlled. This review focuses on quantum transport phenomena in atomic gases that mirror and oftentimes either better elucidate or show fundamental differences with those observed in mesoscopic and nanoscopic systems. We discuss significant progress in performing transport experiments in atomic gases, contrast similarities and differences between transport in cold atoms and in condensed matter systems, and survey inspiring theoretical predictions that are difficult to verify in conventional setups. These results further demonstrate the versatility offered by atomic systems in the study of nonequilibrium phenomena and their promise for novel applications.

  12. Bifacial Si Heterojunction-Perovskite Organic-Inorganic Tandem to Produce Highly Efficient Solar Cell

    E-Print Network [OSTI]

    Reza Asadpour; Raghu V. K. Chavali; M. Ryyan Khan; Muhammad A. Alam

    2015-05-15

    As single junction thin-film technologies, both Si heterojunction (HIT) and Perovskite based solar cells promise high efficiencies at low cost. One expects that a tandem cell design with these cells connected in series will improve the efficiency further. Using a self-consistent numerical modeling of optical and transport characteristics, however, we find that a traditional series connected tandem design suffers from low Jsc due to band-gap mismatch and current matching constraints. It requires careful thickness optimization of Perovskite to achieve any noticeable efficiency gain. Specifically, a traditional tandem cell with state-of-the-art HIT (24%) and Perovskite (20%) sub-cells provides only a modest tandem efficiency of ~25%. Instead, we demonstrate that a bifacial HIT/Perovskite tandem design decouples the optoelectronic constraints and provides an innovative path for extraordinary efficiencies. In the bifacial configuration, the same state-of the-art sub-cells achieve a normalized output of 33%, exceeding the bifacial HIT performance at practical albedo reflections. Unlike the traditional design, this bifacial design is relatively insensitive to Perovskite thickness variations, which may translate to simpler manufacture and higher yield.

  13. Vapor Transport in Dry Soils

    SciTech Connect (OSTI)

    Gee, Glendon W.; Ward, Anderson L.

    2001-11-16

    Water-vapor movement in soils is a complex process, controlled by both diffusion and advection and influenced by pressure and thermal gradients acting across tortuous flow paths. Wide-ranging interest in water-vapor transport includes both theoretical and practical aspects. Just how pressure and thermal gradients enhance water-vapor flow is still not completely understood and subject to ongoing research. Practical aspects include dryland farming (surface mulching), water harvesting (aerial wells), fertilizer placement, and migration of contaminants at waste-sites. The following article describes the processes and practical applications of water-vapor transport, with emphasis on unsaturated (dry) soil systems.

  14. San Augustine School Transportation Building 

    E-Print Network [OSTI]

    Raiford Stripling Associates, Inc.; Stripling, Raiford L.

    2011-08-29

    ON FLUCTUATIONS IN TEE GEOSTROPHIC VOLUKE TRANSPORT OF TEE LAEBADOR CURBZlT A Thesis RIC&MB FOSTER EOHNSON Suhmitted to the Graduate College of Texas AA":i University in partial fulf~meni of ths rec;uirement for the degree of NA, '3TER... OF SCIENCE August 19'Pg H" Jor Sub?'ect: Hctsci clogy' ON FLUCTUAT10NS IN THE GEOSTROPHIC VOLUME TRANSPORT OF THE LAHRADOR CURRENT A Thesis RICHARD FOSTER JOHNSON Approved as to style and oontent by: onairman of Committee Member Head of Department...

  15. Transportation Resources | Advanced Photon Source

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.WeekProducts >Transportation currentlyTransportation

  16. Influence of Transport Variables on Isospin Transport Ratios

    E-Print Network [OSTI]

    D. D. S. Coupland; W. G. Lynch; M. B. Tsang; P. Danielewicz; Yingxun Zhang

    2011-07-19

    The symmetry energy in the nuclear equation of state affects many aspects of nuclear astrophysics, nuclear structure, and nuclear reactions. Recent constraints from heavy ion collisions, including isospin diffusion observables, have started to put constraints on the symmetry energy below nuclear saturation density, but these constraints depend on the employed transport model and input physics other than the symmetry energy. To understand these dependencies, we study the influence of the symmetry energy, isoscaler mean field compressibility and momentum dependence, in-medium nucleon-nucleon cross sections, and light cluster production on isospin diffusion within the pBUU transport code. In addition to the symmetry energy, several uncertain issues strongly affect isospin diffusion, most notably the cross sections and cluster production. In addition, there is a difference in the calculated isospin transport ratios, depending upon whether they are computed using the isospin asymmetry of either the residue or of all forward moving fragments. Measurements that compare the isospin transport ratios of these two quantities would help place constraints on the input physics, such as the density dependence of the symmetry energy.

  17. WVU Transportation Services http://transportation.wvu.edu/

    E-Print Network [OSTI]

    Mohaghegh, Shahab

    Route Options Greyhound · Daily Bus Service to Pittsburgh, PA, Washington, D.C., Clarksburg to Pittsburgh, PA and Washington, D.C. With Routes Through Canada Alternative Transportation Services http on the front of your permit. · Any permit area after 5:00 pm that is not 24 hour restricted Monday thru Friday

  18. SiO{sub 2}/SiC structures annealed in D{sub 2}{sup 18}O: Compositional and electrical effects

    SciTech Connect (OSTI)

    Pitthan, E. Corrêa, S. A.; Soares, G. V.; Boudinov, H. I.; Stedile, F. C.

    2014-03-17

    Effects of water vapor annealing on SiO{sub 2}/4H-SiC structures formed following different routes were investigated using water isotopically enriched in {sup 18}O and {sup 2}H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO{sub 2} films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO{sub 2} films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO{sub 2}/SiC interfacial region was observed, attributed to the reduction of the amount of SiO{sub x}C{sub y} compounds in the interfacial region.

  19. Mechanism of power consumption inhibitive multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure resistance random access memory

    SciTech Connect (OSTI)

    Zhang, Rui; Lou, Jen-Chung [School of Software and Microelectronics, Peking University, Beijing 100871 (China); Tsai, Tsung-Ming, E-mail: tmtsai@faculty.nsysu.edu.tw, E-mail: tcchang@mail.phys.nsysu.edu.tw; Chang, Kuan-Chang; Huang, Syuan-Yong; Shih, Chih-Cheng; Pan, Jhih-Hong; Tung, Cheng-Wei [Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Chang, Ting-Chang, E-mail: tmtsai@faculty.nsysu.edu.tw, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 700, Taiwan (China); Chen, Kai-Huang [Department of Electronics Engineering and Computer Science, Tung-Fang Design Institute, Kaohsiung, Taiwan (China); Young, Tai-Fa; Chen, Hsin-Lu [Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Jung-Hui [Department of Chemistry, National Kaohsiung Normal University, Kaohsiung, Taiwan (China); Chen, Min-Chen; Syu, Yong-En [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Sze, Simon M. [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

    2013-12-21

    In this paper, multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices.

  20. Forsterite film formation and grain growth in 3% Si steel

    SciTech Connect (OSTI)

    Cunha, M.A.; Cesar, M.G.M.M. )

    1994-11-01

    The forsterite film in 3% Si steel is formed by a solid state reaction of the annealing separator, MgO, with SiO[sub 2] that results from the reduction of the fayalite layer in the hydrogen atmosphere in the high temperature anneal. In this work, secondary recrystallization was about complete at 1,000 C. After that temperature tertiary recrystallization can occur if the boundary drag of the second phase particles can be overcome. Addition of phosphates to the annealing separator affects the morphology of the forsterite film and can have an important effect on tertiary recrystallization by affecting the rate of decrease of the boundary-drag and/or the surface energy relationship.