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  1. Cosmology at the Beach Lecture: Wayne Hu

    ScienceCinema (OSTI)

    Wayne Hu

    2010-01-08

    Wayne Hu lectures on Secondary Anisotropy in the CMB. The lecture is the first in a series of 3 he delivered as part of the "Cosmology at the Beach" winter school organized by Berkeley Lab's George Smoot in Los Cabos, Mexico from Jan. 12-16, 2009.

  2. Oct. 25 Lecture Highlights Treatment Technology of HU's Proton Therapy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Institute | Jefferson Lab Oct. 25 Lecture Highlights Treatment Technology of HU's Proton Therapy Institute Oct. 25 Lecture Highlights Treatment Technology of HU's Proton Therapy Institute Cynthia Keppel Hampton University Proton Therapy Institute Scientific and Technical Director, Cynthia Keppel, will present a public lecture titled "Accelerating Protons to Save Lives" on Oct. 25 at Jefferson Lab in Newport News. NEWPORT NEWS, Va., Sept. 29, 2011 - Jefferson Lab's 2011 Fall Science

  3. SUPPORT FOR HU CFRT SUMMER HIGH SCHOOL FUSION WORKSHOP

    SciTech Connect (OSTI)

    Punjabi, Alkesh

    2010-02-09

    Nine summer fusion science research workshops for minority and female high school students were conducted at the Hampton University Center for Fusion Research and Training from 1996 to 2005. Each workshop was of the duration of eight weeks. In all 35 high school students were mentored. The students presented 28 contributed papers at the annual meetings of the American Physical Society Division of Plasma Physics. These contributed papers were very well received by the plasma physics and fusion science research community. The students won a number of prestigious local, state, and national honors, awards, prizes, and scholarships. The notable among these are the two regional finalist positions in the 1999 Siemens-Westinghouse Science and Technology Competitions; 1st Place U.S. Army Award, 2006; 1st Place U.S. Naval Science Award, 2006; Yale Science and Engineering Association Best 11th Grade Project, 2006; Society of Physics Students Book Award, 2006; APS Corporate Minority Scholarship and others. This workshop program conducted by the HU CFRT has been an exemplary success, and served the minority and female students exceptionally fruitfully. The Summer High School Fusion Science Workshop is an immensely successful outreach activity conducted by the HU CFRT. In this workshop, we train, motivate, and provide high quality research experiences to young and talented high school scholars with emphasis on under-represented minorities and female students in fusion science and related areas. The purpose of this workshop is to expose minority and female students to the excitement of research in science at an early stage in their academic lives. It is our hope that this may lead the high school students to pursue higher education and careers in physical sciences, mathematics, and perhaps in fusion science. To our knowledge, this workshop is the first and only one to date, of fusion science for under-represented minorities and female high school students at an HBCU. The faculty researchers in the HU CFRT mentor the students during summers. Mentors spend a considerable amount of time and efforts in training, teaching, guiding and supervising research projects. The HU CFRT has so far conducted nine workshops during the summers of 1996-2000 and 2002-2005. The first workshop was conducted in summer 1996. Students for the workshop are chosen from a national pool of exceptionally talented high school rising seniors/juniors. To our knowledge, most of these students have gone on to prestigious universities such as Duke University, John Hopkins University, CalTech, UCLA, Hampton University, etc. after completing their high school. For instance, Tiffany Fisher, participant of the 1996 summer workshop completed her BS in Mathematics at Hampton University in May 2001. She then went on to Wake Forest University at Winston-Salem, North Carolina to pursue graduate studies. Anshul Haldipur, participant of the 1999 summer workshop, began his undergraduate studies at Duke University in 2000. Christina Nguyen and Ilissa Martinez, participants of the 2000 summer workshop, are pursuing their undergraduate degrees at the UCLA and Florida State University respectively. The organizing committee of the APS DPP annual meeting invited Dr. Punjabi to deliver an invited talk on training the next generation of fusion scientists and engineers at the 2005 APS DPP meeting in Denver, CO. The organizing committee distributed a special flier with the Bulletin to highlight this invited talk and another talk on education as well the expo. This has given wide publicity and recognition to our workshops and Hampton University. Prof. Punjabi's talk: 'LI2 2: Training the next generation of fusion scientists and engineers: summer high school fusion science workshop, Bull. Amer. Phys. Soc. 50, 221 (2005)' was very well-received. He talked about HU education and outreach initiative and the HU CFRT Summer High School Workshop. The audience had a considerable number of questions about our workshops and the High School to PhD Pipeline in fusion science. Professor William Mathews of University of Delaware offered to give the HU Team MHD codes to use, and Professor Birdsall of University of California, Berkeley, plasma theory and simulation group, offered to give the team simple simulation codes to use. We are very happy and proud and very gratified by this, and we thank the US DOE OFES, Dr. Sam Barish and Dr. Michael Crisp for their support and encouragement.

  4. Connecting | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  5. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Last week, I visited General Electric Company's (NYSE:GE) ... site and remains home to some of GE's brightest ... said the building alone carried a 150 million bill. ...

  6. On an instability exhibited by the ballistic-diffusive heat conduction model of Xu and Hu

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Christov, I. C.; Jordan, P. M.

    2013-11-13

    We show that the constitutive relation for the thermal flux proposed by Xu & Hu (2011) admits an unconditional instability. We also highlight the difference between mathematical models containing delay and those that include relaxation effects.

  7. Building | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    how we work across supply chains. By... Read More What is the GE store? Mark Little, CTO & Head of Global Research at GE, describes what the GE Store means and why it's...

  8. GE Global Research Contact | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1800 Cai Lun Road, Zhangjiang High-Tech Park, Pudong, Shanghai, 201203, China Joey Yang +86 21 38773407 joey.yang@ge.com Communications and Public Relations GE Global...

  9. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Partners with Lab on Ultrasonic Clothes Dryer GE Partners with Lab on Ultrasonic Clothes Dryer Addthis Description This video tells how a partnership between Oak Ridge National Laboratory and GE Appliances--with support from the Office of Energy Efficiency and Renewable Energy's (EERE's) Building Technologies Office-is changing the way Americans do laundry with their ultrasonic drying technology that uses vibrations, not heat, to dry fabric. Text Version This is going to be a game-changing

  10. GE Capital Partnership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research and GE Capital: Middle Market Collaboration Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Global Research and GE Capital: Middle Market Collaboration In 2013, a partnering initiative between Global Research and GE Capital resulted in dozens of middle market companies collaborating with Global Research

  11. GE and Quirky | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to inspire new...

  12. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Steam Turbine, Generator and Controls ... service for GE Wind Energy, general manager of controls and power electronics and ... Care Award by Consumer Health World, USA ...

  13. Ars Technica Visits GE's China Technology Center | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technica visits GE's China Technology Center Click to email this to a friend (Opens in new ... Ars Technica visits GE's China Technology Center Ars Technica visited GE's China ...

  14. The GE Store

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Store for Technology GE Global Research CS12005-02_GEstoreTechBook_R13.indd 1 3/10/15 8:45 AM Contents 2 Materials 5 Manufacturing 10 Industrial Internet 15 Energy CS12005-02_GEstoreTechBook_R13.indd 2 3/10/15 8:45 AM Welcome to GE Global Research, also known as the GE Store for Technology. Across our global network of nine technology centers, we have more than 3,600 of the world's best scientists and engineers driving advanced technologies for all of GE's industrial businesses. They are part

  15. GE Research and Development | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency More GE Puts Desalination "on Ice" to Produce Clean Water at Low Cost ...

  16. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... It has helped GE win jet engine orders worth 100 billion - so far - from airlines looking to shave their huge fuel bills. In the future it is expected to be used in power plants ...

  17. GE Global Research Locations | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inventio Always Open At GE Global Research, we work around the clock and across the globe to build, power, move and cure the world. Continue to the experience En Bp China...

  18. GE's Digital Marketplace to Revolutionize Manufacturing | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The open source platform GE scientists are developing will build on the successful platform they demonstrated with DARPA and MIT a few years ago and which has been recognized as an ...

  19. Powering | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    National Laboratory (Berkeley Lab) are exploring a possible key to energy storage for electric... Read More GE's Dual Piezoelectric Cooling Jets (DCJ) Are Cool and Quiet...

  20. What is the GE store |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    materials, software, and analytics to commercialization, process, and business model best practices. The GE Store allows GE to leapfrog industries, to drive innovation,...

  1. Aviation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Read More GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In ...

  2. Photonics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > The Photonics Lab at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Photonics Lab at GE Global Research Loucas Tsakalakos, the Photonics lab manager at GE Global Research, introduces photonics and shares the lab's work on innovative ways to use light. You Might Also Like

  3. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Newsroom Our technologies transform GE's businesses and the world. Learn about them, meet our experts and read news coverage about our work. Home > Newsroom Meet Our Experts Our scientists are global leaders in their fields. They welcome media inquiries. Find an Expert » Media Contacts A photograph of Natalia Albuquerque Rio de Janeiro Natalia Albuquerque +55 21 3548-6193 A photograph of Todd Alhart Niskayuna, Oklahoma City, Munich Todd Alhart +1.518.387.7914 A photograph of Tenzin Dechen

  4. Invention | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Invention Our people drive every scientific advance we make, every day. Find out who they are and what they're thinking right now. Home > Invention Inventors GE Global Research...

  5. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE continues leading role in photonics industry - from LED to digital x-ray Click to email ... GE continues leading role in photonics industry - from LED to digital x-ray Danielle ...

  6. GE Hitachi Nuclear Energy | Open Energy Information

    Open Energy Info (EERE)

    GE Hitachi Nuclear Energy Jump to: navigation, search Name: GE Hitachi Nuclear Energy Place: Wilmington, North Carolina Zip: 28402 Sector: Efficiency, Services Product: GE Hitachi...

  7. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  8. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  9. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  10. Laser Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Manufacturing at GE Global Research Click to email this to a friend (Opens in new ... Laser Manufacturing at GE Global Research Learn how laser sintering, an additive laser ...

  11. GE | OpenEI Community

    Open Energy Info (EERE)

    by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

  12. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology Alliance, which will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. The Alliance builds upon a current collaboration on flow analysis technology for oil and gas wells. It will leverage research and development from GE's newest Global Research Center,

  13. Moving | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Moving We're always working on planes, trains and automobiles-and specialized ways to move people and products efficiently and sustainably. Home > Impact > Moving Green Skies of Brazil Improves Airspace Efficiency It's not uncommon for planes approaching some of Brazil's busiest airports to travel miles out of the way while pilots wait... Read More » Reducing Emissions in the New Tier 4 Locomotive GE Global Research Internal Combustion lab manager Omowoleola "Wole" Akinyemi

  14. GE's Digital Marketplace to Revolutionize Manufacturing | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE's Digital Marketplace to Revolutionize Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Digital Marketplace to Revolutionize Manufacturing GE will lead an effort to create an online community for manufacturing collaboration and data analysis The open source project will build the

  15. Israel: A Source of Innovation for GE |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Israel: A Source of Innovation for GE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Israel: A Source of Innovation for GE Oded Meirav 2014.05.22 Unlike other research organizations within GE Global Research, my team is not tasked with developing technology for GE's businesses. Instead...we hunt! Our job is to identify

  16. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation...

  17. Purdue, GE Collaborate On Advanced Manufacturing | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... In addition to DMDI, Purdue is involved in providing skills and training support for the new jet engine assembly facility GE Aviation is building in neighboring Lafayette, Indiana. ...

  18. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. February 3, 2014 Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience, sustainable energy sources, to plasma physics and new materials. Los

  19. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Johnson, a materials scientist and project leader on GE's magnetic refrigeration project. ... materials would further improve the competitiveness of magnetic refrigeration technology. ...

  20. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Predictivity(tm) Industrial Internet Solutions As a key player in GE's commitment to advance the Industrial Internet, the GE Software Center is at work helping industrial organizations use data, analytics, data

  1. Flying Cars | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  2. MODELING THE NONLINEAR CLUSTERING IN MODIFIED GRAVITY MODELS. I. A FITTING FORMULA FOR THE MATTER POWER SPECTRUM OF f(R) GRAVITY

    SciTech Connect (OSTI)

    Zhao, Gong-Bo

    2014-04-01

    Based on a suite of N-body simulations of the Hu-Sawicki model of f(R) gravity with different sets of model and cosmological parameters, we develop a new fitting formula with a numeric code, MGHalofit, to calculate the nonlinear matter power spectrum P(k) for the Hu-Sawicki model. We compare the MGHalofit predictions at various redshifts (z ? 1) to the f(R) simulations and find that the relative error of the MGHalofit fitting formula of P(k) is no larger than 6% at k ? 1 h Mpc{sup 1} and 12% at k in (1, 10] h Mpc{sup 1}, respectively. Based on a sensitivity study of an ongoing and a future spectroscopic survey, we estimate the detectability of a signal of modified gravity described by the Hu-Sawicki model using the power spectrum up to quasi-nonlinear scales.

  3. GE Innovation and Manufacturing in Europe | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation and Manufacturing in Europe Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Innovation and Manufacturing in Europe Click the image below to see how GE is at work across Europe to change the face of manufacturing. EU graphic You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN »

  4. GE Key Partner in Innovation Institutes | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Is Key Partner in Manufacturing Innovation Institutes Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Is Key Partner in Manufacturing Innovation Institutes GE Global Research 2014.02.25 President Obama today announced two new manufacturing innovation institutes. One is focused on digital manufacturing and design

  5. GE Researchers Tackle Three Unimpossible Missions | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Unimpossible Missions: GE researchers prove nothing is impossible Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers came together over the course of several months to tackle three seemingly impossible missions.

  6. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, Utility, Government, and Academia Partner on Microgrid Project Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, Utility, Government, and Academia Partner on Microgrid Project GE Awarded a $1.2M Department of Energy Grant to Design Technology to Keep Electricity Flowing after Catastrophic Weather Events NISKAYUNA,

  7. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The GE BBQ Center is open, innovating and serving some delicious BBQ Lynn DeRose 2015.03.15 This is the third in a five-part series of dispatches from GE's Science of Barbecue Experience at South by

  8. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In ...

  9. Brilliant Factories Could Revolutionize Manufacturing | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    materials, software, and analytics to commercialization, process, and business model best practices. The GE Store allows GE to leapfrog industries, to drive innovation,...

  10. GE Solar Power | Open Energy Information

    Open Energy Info (EERE)

    GE Solar Power Jump to: navigation, search Name: GE Solar Power Place: Delaware Sector: Solar Product: String representation "The solar busin ... s in July 2004." is too long....

  11. GE Global Research in Niskayuna, NY

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Niskayuna, USA Niskayuna, USA GE Global Research headquarters is the nerve center for innovative work across technologies and collaboration across GE businesses. Click to email...

  12. GE Wind Energy Germany | Open Energy Information

    Open Energy Info (EERE)

    Energy Germany Jump to: navigation, search Name: GE Wind Energy Germany Place: Salzbergen, Germany Zip: 48499 Sector: Wind energy Product: Germany-based, division of GE Wind Energy...

  13. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  14. Working at GE Global Research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    products and working on lots of different things, and I was convinced that this ideal job didn't exist. I came to find out about the Sensor & Signal Analytics Lab at GE Global...

  15. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens ...

  16. GE Develops High Water Recovery Technology in China | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in ... GE Develops High Water Recovery Technology in China Technology aims to boost development ...

  17. Technical Education | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technical Education at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Technical Education at GE Global Research Mark Vermilyea describes the Edison Engineering Development Program (EEDP) and its "A Course," which features lectures on Global Research work in GE's major business units,

  18. TEE-0077- In the Matter of GE Appliances & Lighting

    Broader source: Energy.gov [DOE]

    The Decision and Order considers and Application for Exception filed by GE Appliances & Lighting (GE)

  19. MEMS Relays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces

  20. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) ...

  1. Airline Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    reduce their operating costs and environmental footprint. You Might Also Like IMG0475 Innovation 247: We're Always Open direct write2square The GE Store for Technology is...

  2. Epi-cleaning of Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Di Gaspare, L.; Sabbagh, D.; De Seta, M.; Sodo, A.; Wirths, S.; Buca, D.; Zaumseil, P.; Schroeder, T.; Capellini, G.

    2015-01-28

    We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.

  3. GE Researcher Explores Science Behind Movie Chappie | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic The film "Chappie" is the story of a Police droid, reprogrammed to become

  4. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation by 2020 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in

  5. 12 GeV! | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GeV! 12 GeV! December 21, 2015 Our upgrade project is called the 12 GeV CEBAF Upgrade Project. At the time CD-4A was achieved, we demonstrated 2.2 GeV per pass. This was 12 GeV! Well, not quite. In fact with more than one pass, we limited ourselves to a little more than 6 GeV with three passes, and to 10.5 GeV with 5.5 passes. It was not felt to be prudent to demand 12 GeV out of the machine immediately after turn on. Operations in the spring of 2015 at high energy, ~10.5 GeV, came to a

  6. Sodium Battery | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sodium Battery Technology Improves Performance and Safety Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Sodium Battery Technology Improves Performance and Safety Imagination and innovation have always been in GE's DNA. While exploring the expanded use of hybrid power in the rail, mining and marine industries, GE began

  7. Northern Colorado Wind Energy Center (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale...

  8. Milford Wind Corridor Phase I (GE Energy) | Open Energy Information

    Open Energy Info (EERE)

    I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type...

  9. What Is MEMS? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials, Surfaces and Interfaces 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN ...

  10. GE Shenhua JV | Open Energy Information

    Open Energy Info (EERE)

    Name: GE & Shenhua JV Place: China Product: China based industrial coal gasification joint venture. References: GE & Shenhua JV1 This article is a stub. You can help OpenEI...

  11. GE Wind Energy | Open Energy Information

    Open Energy Info (EERE)

    Energy Jump to: navigation, search Name: GE Wind Energy Place: Atlanta, Georgia Zip: GA 30339 Sector: Wind energy Product: GE's wind energy division, formed as a result of the...

  12. GE Scientist Stephan Biller Discusses the Industrial Internet | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Stephan Biller, Chief Manufacturing Scientist at GE Global Research, talked with the Farstuff Podcast about the

  13. GE PowerPoint Template

    U.S. Energy Information Administration (EIA) Indexed Site

    Power of Networks in an Age of Gas Peter Evans, PhD Director Global Strategy & Analytics General Electric 2013 EIA Energy Conference June 17-18, 2013 Washington, DC 2 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Sources of competitive advantage Thomas Edison - GE Founder Natural endowments Creative endowments The U.S. is rich in both 3 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Physical and digital infrastructure Advantage of

  14. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    continues leading role in photonics industry - from LED to digital x-ray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE continues leading role in photonics industry - from LED to digital x-ray Danielle Merfeld, Ph.D. 2015.07.27 Vice President Joseph Biden joined New York Gov. Andrew Cuomo in Rochester, New York

  15. Finding Engineering Inspiration at GE | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Getting inspired at the intersection of innovation and creativity Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Getting inspired at the intersection of innovation and creativity Alice Pinney 2015.05.11 Interning at a place where innovation meets creativity has been a dream come true for me. Being an intern at GE

  16. GE's BBQ Science Experiments Produce Results |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BBQ Science Experiments Reveal Winning Rack of Ribs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ Science Experiments Reveal Winning Rack of Ribs Lynn DeRose 2015.03.16 This is the fourth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art

  17. User Experience Testing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Software's Design and User Experience Studio Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Software's Design and User Experience Studio Looking to the future, GE created the Design and Experience Studio dedicated to developing clean, delightful, understandable, and actionable software experiences for GE customers,

  18. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Healthcare We're making healthcare accessible for people around the globe, increasing quality of care and expanding medical treatment boundaries. Home > Innovation > Healthcare GE Unveils High-Tech Superhero, GENIUS MAN Created on earth to inspire the next generation of scientists and engineers, a team of GE researchers have created a comic... Read More » The Dirt on the Cleanroom In this short video, take a look inside the GE Global Research cleanroom and meet the team working in this

  19. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and create next." Abate will become only the 10th leader in GE Global Research's 115-year history. As Chief Technology Officer, Abate will oversee GE's nine global research center...

  20. Joseph Vinciquerra | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Dynamics of Ice Nucleation on Water Repellent Surfaces GE Scientists Demonstrate Promising Anti-icing Nano Surfaces Influences of Friction, Geometric Nonlinearities, and ...

  1. GE Global Research in Shanghai, China

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shanghai, China Shanghai, China GE's commercial and industrial history meets challenges posed by China's rapid growth to produce work reflecting the advancing world. Click to email ...

  2. Work & Life at Shanghai | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    This community creates a cross-business platform for GE China technologists to enhance ... These include the latest In China for China efforts, as well as product demonstrations, ...

  3. Big Data Analysis | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Software We're blending data, analytics and computing know-how into algorithms and programs that drive business and technology forward. Home > Innovation > Software GE Software's ...

  4. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    jet Read More Dual Fuel Locomotive Is Friendly to the Environment Inside GE's multimillion dollar single-cell test rig, scientists are working on advanced combustion and engine ...

  5. GE Global Research in Oklahoma City

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oklahoma City, USA Oklahoma City, USA GE's first sector-specific global research center is dedicated to developing and accelerating innovative oil and gas technologies. Click to ...

  6. 3D Printed Toy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientists at GE Global Research get into the holiday spirit by bringing high-tech additive manufacturing techniques to Christmas tree ornaments. You Might Also Like...

  7. Disclosures, Disclaimers and Policies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to PHS-funded research Equal Employment Opportunity Plans Persons wishing to review GE Global Reasearch's EEOP should contact the GEGR Recruiting Manager: Megan Magee, GRC...

  8. Zero Liquid Discharge Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Purifies Water GE's Reverse Osmosis (RO) Membrane technology addresses industrial waste water treatment and recycling needs, purifying water for cooling, boilers, and general...

  9. Stump the Scientist | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    > Stump the Scientist Behind the Scenes with Chief Scientist Jim Bray Watch the Video Happy Pi Day from GE Global Research Watch the Video Ready to Stump the...

  10. GE Global Research in Bangalore, India

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    toughest healthcare challenges direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open globalconnections300...

  11. Blue Arc Machining | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Small Device, Broad Impact in Power Electronics IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  12. Intelligent Rail Networks | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  13. Collaborative Military Vehicle Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  14. Industrial Inspection Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  15. Internal Combustion Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  16. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  17. Cedar Creek Wind Farm II (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service...

  18. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  19. Top of the World (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner...

  20. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers [EERE]

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  1. GE Showcases Industrial Internet Innovations and Promotes Win...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE China Technology Center teams up with Zhangjiang High-tech Management Committee to ... SHANGHAI, Oct. 21 -- The GE China Technology Center presented the newest industrial trends ...

  2. How Will Everything Be Intelligent? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Global Research's Fu Xu, an expert in the Real Time Controls lab at GE's China ... Edition challenge CTCV Innovate in China, Innovate for China shanghai Ars ...

  3. GE Global Research Sourcing External Document & Process Repository...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Global Research Sourcing External Document & Process Repository Home > GE Global Research Sourcing External Document & Process Repository Supplier Integrity Guide Purchase Order...

  4. Scanning Photocurrent Microscopy of Si and Ge nanowires (Conference...

    Office of Scientific and Technical Information (OSTI)

    Conference: Scanning Photocurrent Microscopy of Si and Ge nanowires Citation Details In-Document Search Title: Scanning Photocurrent Microscopy of Si and Ge nanowires You are ...

  5. GE Hybrid Power Generation Systems | Open Energy Information

    Open Energy Info (EERE)

    Name: GE Hybrid Power Generation Systems Place: Georgia Zip: Atlanta Product: Focused on fuel cell stack and system development. References: GE Hybrid Power Generation Systems1...

  6. Tech Digest July 2013 | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tech Digest-July 2013 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Tech Digest-July 2013 Catch up on some of the latest technological developments at GE Global Research. You Might Also Like GE's Brilliant Factory Lab advances digital manufacturing Bringing a Digital Mindset to Manufacturing » ge store2 What is the

  7. Durathon Battery Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Durathon(tm) Battery Helps Power Electric Bus Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Durathon(tm) Battery Helps Power Electric Bus GE engineer Tim Richter explains how the company's Durathon(tm) batteries fit into the on-board energy management system on a bus at GE's Global Research Center. This

  8. About Additive Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Introducing Additive Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Introducing Additive Manufacturing at GE Global Research Prabhjot Singh, manager of the Additive Manufacturing Lab at GE Global Research, describes the technology used in his lab. You Might Also Like DirectWrite_V

  9. A dual model HU conversion from MRI intensity values within and outside of bone segment for MRI-based radiotherapy treatment planning of prostate cancer

    SciTech Connect (OSTI)

    Korhonen, Juha; Department of Oncology, Helsinki University Central Hospital, POB-180, 00029 HUS ; Kapanen, Mika; Department of Oncology, Helsinki University Central Hospital, POB-180, 00029 HUS; Department of Medical Physics, Tampere University Hospital, POB-2000, 33521 Tampere ; Keyrilinen, Jani; Seppl, Tiina; Tenhunen, Mikko

    2014-01-15

    Purpose: The lack of electron density information in magnetic resonance images (MRI) poses a major challenge for MRI-based radiotherapy treatment planning (RTP). In this study the authors convert MRI intensity values into Hounsfield units (HUs) in the male pelvis and thus enable accurate MRI-based RTP for prostate cancer patients with varying tissue anatomy and body fat contents. Methods: T{sub 1}/T{sub 2}*-weighted MRI intensity values and standard computed tomography (CT) image HUs in the male pelvis were analyzed using image data of 10 prostate cancer patients. The collected data were utilized to generate a dual model HU conversion technique from MRI intensity values of the single image set separately within and outside of contoured pelvic bones. Within the bone segment local MRI intensity values were converted to HUs by applying a second-order polynomial model. This model was tuned for each patient by two patient-specific adjustments: MR signal normalization to correct shifts in absolute intensity level and application of a cutoff value to accurately represent low density bony tissue HUs. For soft tissues, such as fat and muscle, located outside of the bone contours, a threshold-based segmentation method without requirements for any patient-specific adjustments was introduced to convert MRI intensity values into HUs. The dual model HU conversion technique was implemented by constructing pseudo-CT images for 10 other prostate cancer patients. The feasibility of these images for RTP was evaluated by comparing HUs in the generated pseudo-CT images with those in standard CT images, and by determining deviations in MRI-based dose distributions compared to those in CT images with 7-field intensity modulated radiation therapy (IMRT) with the anisotropic analytical algorithm and 360 volumetric-modulated arc therapy (VMAT) with the Voxel Monte Carlo algorithm. Results: The average HU differences between the constructed pseudo-CT images and standard CT images of each test patient ranged from ?2 to 5 HUs and from 22 to 78 HUs in soft and bony tissues, respectively. The average local absolute value differences were 11 HUs in soft tissues and 99 HUs in bones. The planning target volume doses (volumes 95%, 50%, 5%) in the pseudo-CT images were within 0.8% compared to those in CT images in all of the 20 treatment plans. The average deviation was 0.3%. With all the test patients over 94% (IMRT) and 92% (VMAT) of dose points within body (lower than 10% of maximum dose suppressed) passed the 1 mm and 1% 2D gamma index criterion. The statistical tests (t- and F-tests) showed significantly improved (p ? 0.05) HU and dose calculation accuracies with the soft tissue conversion method instead of homogeneous representation of these tissues in MRI-based RTP images. Conclusions: This study indicates that it is possible to construct high quality pseudo-CT images by converting the intensity values of a single MRI series into HUs in the male pelvis, and to use these images for accurate MRI-based prostate RTP dose calculations.

  10. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the innovative ecoROTR wind turbine in a drone GE spent a week flying state-of-the-art drones over and around some of our biggest machines, including the ecoROTR experimental......

  11. Oil & Gas Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research Oil & Gas Technology Center Click to email this to a friend (Opens in new ... GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology ...

  12. Metal MEMS Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces

  13. High Performance Computing for Manufacturing Parternship | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on ...

  14. membrane-ge | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bench-Scale High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high...

  15. Ideas Are Scary | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for a Career in R&D IsraelTechCenterV Israel: A Source of Innovation for GE NanaVertical Open Innovation and the Middle Market EdisonSummit2-14V Tomorrow's...

  16. GE Global Research Europe in Munich, Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Click to email...

  17. Diagnostics on Demand | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    or enable JavaScript if it is disabled in your browser. GE's lead researcher, David Moore, shows how this paper-based instrument, the size of a deck of playing cards, enables...

  18. Brazil Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1-2-67-v-biofuel-research Biofuel Research at Brazil Center of Excellence IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and ...

  19. Waste to Energy Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Matt Nielsen talks about waste-to-energy technology at the 2012 Invention Convention's Capital District awards ceremony. You Might Also Like 2-2-7-v GE Scientists Unveil Greener,...

  20. Remembering Zach Stum | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Zach was an outstanding engineer, a man who led by example, and an innovative leader. ... Zach joined GE as an engineer in January 2006. Educated at Penn State and Cornell, his ...

  1. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for GE Intern Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn ...

  2. Colon Cancer Mapping | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    "With GE's cancer mapping technology, we're enabling cancer to be viewed in ways it ... of proteins and nucleic acids (RNA and DNA) without destroying the integrity of the ...

  3. Advanced Water Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water We're developing ways to purify and conserve this vital resource. Take a look at our work. Home > Innovation > Water Innovation 247: We're Always Open At GE Global Research, ...

  4. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  5. Game Changing Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Real World in 10 Years primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe a79-v-open-innovation We're Open to Collaboration with Companies Big and Small...

  6. Working in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN IMG0475 Innovation 247: We're Always Open MunichinteriorV 10 Years ON: From the Lab to the...

  7. Kids at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High-Tech Superhero, GENIUS MAN direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open MunichinteriorV 10...

  8. Robotic Wind Turbine Inspection | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advances Wind Turbine Inspection Through Robotic Trials Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Advances Wind Turbine Inspection Through Robotic Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector

  9. Ultrasound Open Innovation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Launches Ultrasound Open Innovation Initiative Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Launches Ultrasound Open Innovation Initiative Similar to how independent developers create new applications and find new uses for smart phones, tablets and other intelligent devices, GE is looking to collaborate with a

  10. Immelt: GE Stands at Intersection of Physical, Digital | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Immelt: GE stands at the intersection of the physical, digital Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Immelt: GE stands at the intersection of the physical, digital GE's 2015 Annual Meeting of Shareowners was held Wednesday, April 22, in Oklahoma City, the location of GE's newest Global Research facility.

  11. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to 1,200 girls in nine cities nationwide. GE joins other program partners including Accenture, Adobe, AIG, AT&T, Electronic Arts, Facebook, Google, Microsoft, Pixar Animation...

  12. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Click to email this ... GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year ...

  13. Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Vehicles GE Showcases Innovation in Alternative Fuel Vehicles to someone by E-mail Share Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Facebook Tweet about Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Twitter Bookmark Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Google Bookmark Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on

  14. Microsoft Word - FY07AnnualReport.doc

    Broader source: Energy.gov (indexed) [DOE]

    (EZ) 1 18,000,000 FRANCE (FR) 5 8,093,198 GABON (GB) 1 441,600 GAMBIA (GA) 1 49,300 GERMANY FEDERAL REPUBLIC OF (GE) 3 1,698,498 HUNGARY (HU) 1 4,000,000 KAZAKHSTAN (KZ) 3...

  15. New Global Research Website | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    I Want to See... the New Global Research Website Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) I Want to See... the New Global Research Website GE Global Research 2014.03.17 Today, we are excited to unveil the brand new GE Global Research website. You can find this new web destination at geglobalresearch.com. The new

  16. Promoting Cross Research Collaboration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Israel's Weekathon: GE Collaborating with multinational companies Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Israel's Weekathon: GE Collaborating with multinational companies Gil Abramovich 2015.09.21 When taken out of their normal work environments for a week, offered an endless supply of snacks, and given the

  17. Work and Life Balance | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Flex Ability: Balancing Work with Life Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Flex Ability: Balancing Work with Life Achieving work/life balance is a much-talked-about topic. According to GE Healthcare's Kelly Piacsek, "GE hires people for what's inside their head-what they know-and

  18. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sundeep Kumar Sundeep Kumar Senior Scientist Ceramics Synthesis & Processing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I leverage the experience and network I have built over the years working with some of the finest minds at GE to help me solve tough technical problems for GE." -Sundeep Kumar

  19. Licensing Our Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Teaming Up With Idea Works Puts Our Tech Into the World Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Teaming Up With Idea Works Puts Our Tech Into the World GE Idea Works is extending the reach of our technology by connecting GE's internal intellectual property, technology and resources with the external world. With

  20. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    U.S. Secretary of Commerce Penny Pritzker Announces GE's Christine Furstoss to Serve on the National Advisory Council on Innovation and Entrepreneurship Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) U.S. Secretary of Commerce Penny Pritzker Announces GE's Christine Furstoss to Serve on the National Advisory Council on

  1. Underground CO2 Storage | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enhanced Sensing Capabilities for CO2 Storage Wells Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Enhanced Sensing Capabilities for CO2 Storage Wells GE (NYSE: GE) Global Research today announced it has signed a contract with the National Energy Technology Laboratory (NETL), part of the U.S. Department of Energy (DOE)

  2. Artificial Lift Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology: Driving the Artificial Lift Market Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Technology: Driving the Artificial Lift Market Gary Ford, president and CEO of GE Artificial Lift, discusses what the equipment does, the current state of the market and the importance of working with GE's Global Research

  3. Who Is Jim Bray, GE Stump the Scientist? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Who Is Jim Bray, GE Stump the Scientist? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Who Is Jim Bray, GE Stump the Scientist? 2012.05.30 Chief Scientist Jim Bray introduces himself and talks about his work and time at GE. 0 Comments Comment Name Email Submit Comment

  4. GE Announces Vic Abate as New Chief Technology Officer | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Vic Abate, President and CEO of GE's Power Generation business, to succeed Mark Little and continue GE's leadership in the Digital

  5. Science and BBQ: GE makes its mark, and bark, at SXSW | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and BBQ: GE makes its mark ... and bark! Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Science and BBQ: GE makes its mark ... and bark! Lynn DeRose 2015.03.20 This is the fifth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant

  6. GE Scientists Source Best Ideas at hackMIT | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientists Source Best Ideas at hackMIT Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Scientists Source Best Ideas at hackMIT Joseph Salvo 2013.10.03 At MIT they're serious about "hacking" together ideas for innovation, invention, and new businesses. This weekend a team from GE Global Research and GE

  7. GE launches 'STEM empowers OK' initiative in Oklahoma City | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" stem empowers ok GE Foundation donates $400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to

  8. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  9. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  10. Nanotextured Anti-Icing Surfaces | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Demonstrate Promising Anti-icing Nano Surfaces Click to email this to a friend (Opens in ... GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today ...

  11. At-Home Natural Gas Refueling | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Projects Agency for Energy (ARPA-E) to develop an affordable at-home ... 2.3 million, which will be shared by ARPA-E and GE. As part of the program, GE ...

  12. COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1, 2015, 4:00pm to 5:30pm Colloquia MBG Auditorium COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint Dr. James Bray GE Global Research I will give a brief overview of...

  13. Future of 3D Printing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In 2016, GE will enter a new jet engine into service called the CFM LEAP-the first in GE's line to incorporate 3D-printed parts. Specifically, it will be a combustion component ...

  14. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Foundation donates 400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to sponsor week-long, GE Summer Science Academy at OSSM for Oklahoma students ...

  15. Intern Shares Insight Into Researchers' Minds |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Opens in new window) The Quality of GE Researchers...and Why That's So Important Daniel Cadel 2014.08.14 GE Global Research asked some of our interns to share why they wanted...

  16. What Happens in Research-Based Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    paths we have at GE Global Research ("GE Leaders are Researchers Too",). The field of gas turbine heat transfer is growing in importance, and as a result, we have a lot of job...

  17. TEE-0074- In the Matter of GE Appliances & Lighting

    Broader source: Energy.gov [DOE]

    This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation...

  18. VEA-0016- In the Matter of GE Appliances

    Broader source: Energy.gov [DOE]

    Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month...

  19. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    this way. The GE Store is a place where every business can come for technologies, product development and services that no one else can provide. The work of our researchers ties...

  20. GE and Maker Faire Are a Match Made in Nerd Heaven | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE and Maker Faire Are a Match Made in Nerd Heaven Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new ...

  1. GE CRD SERVICE ORDER TERMS AND CONDITIONS (6/00)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE GLOBAL RESEARCH SERVICE ORDER TERMS AND CONDITIONS (May 2013) FORM A INTEGRITY STATEMENT: If you as a supplier become aware of any situation that appears to be inconsistent with GE's Policy to maintain lawful and fair practices in its supplier relationships, you may write to our Ombudsman at: GE Global Research, One Research Circle, Niskayuna, NY 12309. 1. ACCEPTANCE AND TERMS AND CONDITIONS: (a) Seller accepts this Order and any changes by signing the acceptance copy and returning it to GE.

  2. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T.; Dobbie, A.; Myronov, M.

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1−x}Ge{sub x} alloys for germanium concentrations x ≤ 0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28 < x ≤ 1 form islands after deposition of ∼3.0/x monolayers (=quarter unit cells in the diamond lattice, ML). The uncertainty in the amount of deposited material for pure Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ∼2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x = 1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  3. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  4. GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV...

    Office of Scientific and Technical Information (OSTI)

    to the HARP-CDP Group Citation Details In-Document Search Title: GEANT4 Simulation of Hadronic Interactions at 8-GeVC to 10-GeVC: Response to the HARP-CDP Group The results of ...

  5. GE Appliances: Order (2012-SE-1403) | Department of Energy

    Energy Savers [EERE]

    Appliances: Order (2012-SE-1403) GE Appliances: Order (2012-SE-1403) October 3, 2012 DOE ordered GE Appliances, a Division of General Electric Company to pay a $63,000 civil penalty after finding GE had privately labeled and distributed in commerce in the U.S. the 4-cubic-foot capacity refrigerator basic model SMR04GAZCS, which includes models SMR04GAZACS and SMR04GAZBCS. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and GE. PDF icon GE Appliances: Order

  6. 12 GeV Upgrade | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using Jefferson Lab's Continuous Electron Beam Accelerator Facility. CEBAF provides physicists with an unprecedented

  7. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  8. Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates

    SciTech Connect (OSTI)

    Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

    2009-05-19

    The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

  9. GE's Arnie Lund Discusses User Experience at an Industrial Scale | GE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research Arnie Lund Discusses User Experience at an Industrial Scale Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Arnie Lund Discusses User Experience at an Industrial Scale Arnie Lund, manager of the UX Industrial Innovation Lab at GE Global Research in San Ramon, Calif, recently spoke to the

  10. Construction progresses at GE's Oil & Gas Technology Center | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Home > Impact > Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Construction is

  11. GE Uses 3D Printers to Make Jet Parts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Uses 3D Printers to Make Jet Parts Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Uses 3D Printers to Make Jet Parts GE Global Research 2013.12.05 Christine Furstoss, Technology Director for Manufacturing and Materials Technologies, was interviewed on Bloomberg Television's "Bloomberg West" by Emily Chang.

  12. GE funds initiative to support STEM initiatives in Oklahoma | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research STEM Empowers OK: Initiative to enrich STEM education in Oklahoma Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) STEM Empowers OK: Initiative to enrich STEM education in Oklahoma On April 21, 2015, GE announced a grant to the state of Oklahoma to enhance STEM education initiatives. Jeff Immelt, GE's

  13. GE to provide data, analytics to Brazilian Canoe Confederation | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research to sponsor Brazilian Canoe Confederation Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE to sponsor Brazilian Canoe Confederation Innovative partnership will pair GE software scientists with athletes to explore how big data can help them optimize their performance for the Rio 2016 Olympic and Paralympic

  14. Recovery Act Helps GE in-source Manufacturing | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances

  15. Thermal Imaging Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advanced Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Advanced Thermal Imaging Bryan Whalen in the Electronics Cooling Lab at GE Global Research recorded this thermo graphic video of a Morpho butterfly structure in response to heat pulses produced by breathing onto

  16. Pi in Applied Optics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inside the Applied Optics Lab II Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The sPI CAM: Inside the Applied Optics Lab II The sPI Cam visits the Applied Optics Lab to see how Mark Meyers, a physicist and optical engineer at GE Global Research, uses Pi. You Might Also Like lightning bolt We One-Upped Ben Franklin,

  17. MU(& Ge-+v,

    Office of Legacy Management (LM)

    fil MU(& Ge-+v, . !d R&arch & Development b This document consists of 6 Contract Ho. pages and - . --------------_____---. figures No.--~--of.--~~-_-copies, Series,&,, This subcontract entered into this 20 day 0fSepte~ber , 1943, by and between the University of Cliicago, a corporation not for pecuniary profit organized under the ICVS of the Stnto of Illinois, of Chicago, Illinois (hereinafter called "the Contractor") and Yiolverine Tube Divisionof Caluzet 2 Eecla

  18. Rodrigo Rodriguez Erdmenger | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rodrigo Rodriguez Erdmenger Rodrigo Rodriguez Erdmenger Research Engineer Turbomachinery Aero Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "What fuels my passion for work is knowing that I can impact the technology of GE products and lives of people all over the world." -Rodrigo Rodriguez Erdmenger Ask

  19. Making Silicon Carbide Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Making Silicon Carbide Devices in the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research cleanroom, I wanted to take some time to give you the dirt on our clean room over the

  20. Jim Bray Interview | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Behind the Scenes with Chief Scientist Jim Bray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Behind the Scenes with Chief Scientist Jim Bray 2013.04.25 Chief Scientist Jim Bray talks about technology milestones, his career and his life at and away from GE. 0 Comments Comment Name Email Submit Comment You Might Also

  1. Advanced Propulsion Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient The new LEAP engine, developed by CFM, has literally taken leaps in engine innovation in both fuel and cost efficiency. Scheduled to enter service in 2016, GE in

  2. Masako Yamada | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Masako Yamada Masako Yamada Manager Advanced Computing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I believe individuals should be given the chance to reinvent themselves. Recently, I've reinvented myself as a supercomputing person-again." -Masako Yamada Masako began her career at GE in applied optics,

  3. Advanced Composite Materials | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composites Automation Cuts Production Time Down to Hours Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Composites Automation Cuts Production Time Down to Hours Over the next few years, GE Aviation will introduce more new engine platforms than it has in the past few decades. This will bring about unprecedented demands

  4. Smart Street Lights | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    LightGrid Provides Real-Time Feedback From Street Lights Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) LightGrid Provides Real-Time Feedback From Street Lights You use a GPS to provide real-time data from your car. Now, technologists from the Controls, Electronics and Signal Processing Lab at GE Global Research will

  5. Connecting to the Grid | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Connecting to the Grid Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Connecting to the Grid Ranjan Gupta 2014.02.24 I'm blogging this week from an event I'm always thrilled to attend - the annual ARPA-e Energy Innovation Summit in Washington. I'm joined here by a few of my colleagues from GE Global Research to

  6. Testimonials - Partnerships in Fuel Cells - GE Global Research |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis Text Version The words "Office of Energy Efficiency & Renewable Energy, U.S. Department of Energy, EERE Partnership Testimonials," appear on the screen, followed by "Mark Little, Senior Vice President, GE Global Research" and footage of a man in a suit. Mark Little: Energy, manufacturing, innovation, and competitiveness are the core to the

  7. Commissioning and Operation of 12 GeV CEBAF

    SciTech Connect (OSTI)

    Freyberger, Arne P.

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) located at the Thomas Jefferson National Accelerator Laboratory (JLab) has been recently upgraded to deliver continuous electron beams to the experimental users at a maximum energy of 12 GeV, three times the original design energy of 4 GeV. This paper will present an overview of the upgrade, referred to as the 12GeV upgrade, and highlights from recent beam commissioning results.

  8. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    SciTech Connect (OSTI)

    Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

    2015-05-07

    We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

  9. Engineers Named to National Academy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 GE Engineers Elected to National Academy of Engineering Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) 3 GE Engineers Elected to National Academy of Engineering GE (NYSE: GE) announced today that three distinguished engineers, one from the company's Global Research Center, and two from its Aviation business, have

  10. Thoughts From the 2012 Whitney Software Symposium | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Big Data, Modeling and Simulation, High Performance Computing and the Industrial Internet as key technological enablers of GE's Software initiatives. We enjoyed speakers from...

  11. Big Data and Analytics at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    time analytics is required At GE we keep pace with these trends via the Industrial Internet, a highly connected ecosystem of intelligent machines, advanced analytics and people...

  12. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    capability. New strengths, skills and cultural change are needed across GE, including multilevel leadership, technical and commercial capabilities, signaling a complete...

  13. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ready to dive in? Apply for the program. GE Software Leadership Program The rise of the Industrial Internet requires a new breed of talent and organizational capability. New...

  14. General Electric in India GE | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name: General Electric in India (GE) Place: New Delhi, Delhi (NCT), India Zip: 110015 Sector: Services, Wind energy Product: String representation...

  15. Silicon Carbide (SiC) Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at much higher frequencies and temperatures and convert electric power at higher efficiency or lower losses. ... Carbide Power Chip Fabrication Line GE is partnering with the SUNY ...

  16. GE China Technology Center Wins Top 12 Most Innovative Practices...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational ... GE China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational ...

  17. China Technology Center Celebrates 15 Years | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    China Technology Center Celebrates 15 Years of Innovation "In China for China" Click to ... GE's China Technology Center Celebrates 15 Years of Innovation "In China for China" ...

  18. High-Speed Network Enables Industrial Internet | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE software scientists and developers to spur high-speed connectivity and access to really big data Disruptive innovation demonstrates industry success in creating viable test beds ...

  19. Invention Factor: How Will The World Get Smaller | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    is changing the manufacturing process for jet engines and opening up the world of air ... to the Real World in 10 Years primusenginefeaturedimage3 GE Innovation and ...

  20. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Fchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Hche, Thomas; Tnnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380C. Typical Stransky-Krastanov growth is observed at 410C. At lower temperatures (320C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  1. GE Software Expert Julian Keith Loren Discusses Innovation and the

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Internet | GE Global Research GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Julian Keith Loren, a senior product manager at GE

  2. A Sneak Peek Into Santa's Smarter Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    legs a break. - An upgraded sleigh frame made from GE's high temperature Ceramic Matrix Composites (CMCs). The CMCs can withstand the heat of entry and reentry in earth's...

  3. Secretary Chu Speaks at GE Solar Facility | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here.

  4. 3D Printing Aircraft Parts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in GE aircraft engines signals a paradigm shift that is happening with the emergence of additive manufacturing. Additive not only offers the opportunity to design parts never...

  5. The Wizard of Schenectady: Charles Proteus Steinmetz | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    week the Smithsonian's "Past Imperfect" blog highlighted a man near and dear to the heart of GE Global Research, Charles Proteus Steinmetz. The article paints a really...

  6. Silicon Carbide in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inside the GE Global Research Clean Room: Silicon Carbide Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inside the GE Global Research Clean Room: Silicon Carbide GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-research The Dirt

  7. Cloud Computing Manufacturing Efforts Take Off | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    cloud computing capabilities. Last year, we demonstrated an innovative crowdsourcing platform with DARPA and are now exploring the use of this technology for GE and its partners. ...

  8. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. |

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  9. XAS/EXAFS studies of Ge nanoparticles produced by reaction between Mg{sub 2}Ge and GeCl{sub 4}

    SciTech Connect (OSTI)

    Pugsley, Andrew J.; Bull, Craig L.; Sella, Andrea; Sankar, Gopinathan; McMillan, Paul F.

    2011-09-15

    We present results of an XAS and EXAFS study of the synthesis of Ge nanoparticles formed by a metathesis reaction between Mg{sub 2}Ge and GeCl{sub 4} in diglyme (diethylene glycol dimethyl ether). The progress of the formation reaction and the products formed at various stages in the processing was characterised by TEM and optical spectroscopy as well as in situ XAS/EXAFS studies using specially designed reaction cells. - Graphical abstract: Nano-Ge particles 2-10 nm in diameter were prepared by reaction between Mg{sub 2}Ge Zintl phase and GeCl{sub 4} in diglyme followed by capping with BuLi and extraction into hexane. We used synchrotron X-ray absorption spectroscopy (XAS) at the Ge K edge with analysis of the EXAFS region combined with room temperature photoluminescence and TEM to characterise the nature of the nanoparticles and model compounds and to follow the course of the reaction. A TEM image of the germanium nanoparticles is shown. Highlights: > In situ characteristaion of germanium nanoparticles. > X-ray spectroscopic technique development. > Improving quality of nanoparticles grown by metathesis route.

  10. GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV/C: Response

    Office of Scientific and Technical Information (OSTI)

    to the HARP-CDP Group (Journal Article) | SciTech Connect GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV/C: Response to the HARP-CDP Group Citation Details In-Document Search Title: GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV/C: Response to the HARP-CDP Group The results of the HARP-CDP group on the comparison of GEANT4 Monte Carlo predictions versus experimental data are discussed. It is shown that the problems observed by the group are caused by an

  11. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  12. GE Progress Includes 140 Things We Made Yesterday | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Power of Networks in an Age of Gas Peter Evans, PhD Director Global Strategy & Analytics General Electric 2013 EIA Energy Conference June 17-18, 2013 Washington, DC 2 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Sources of competitive advantage Thomas Edison - GE Founder Natural endowments Creative endowments The U.S. is rich in both 3 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Physical and digital infrastructure Advantage of

  13. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-06

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  14. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  15. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  16. GE Showcases Industrial Internet Innovations and Promotes Win-Win

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cooperation at 2015 TECHfest | GE Global Research Showcases Industrial Internet Innovations and Promotes Win-Win Cooperation at 2015 TECHfest Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Showcases Industrial Internet Innovations and Promotes Win-Win Cooperation at 2015 TECHfest GE China Technology Center teams

  17. Data Science Makes Trains More Efficient | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Data Science Makes Trains More Efficient Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Data Science Makes Trains More Efficient In this Special Report, GE's Creator-in-Residence, Sally LePage, talks to GE Global Research's Pierino Bonanni about the GE technology that is making its locomotives more fuel efficient than

  18. Breaking Ground for GE Oil & Gas Tech Center|GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas Technology Center in Oklahoma City $125M global hub to

  19. GE Awarded DOE Funding to Pilot Carbon Capture Technology | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Same class of ingredients found in hair conditioners and fabric softeners could hold key to washing out CO2 from Power

  20. GE Develops High Water Recovery Technology in China | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Develops High Water Recovery Technology in China Technology aims to boost development of China's household water purification industry SHANGHAI, September. 17, 2015 - A team of scientists led by the Coating and Membrane

  1. GE partners with 'Girls Who Code' for summer program | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap in Tech Sector Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap in Tech Sector Aimed at equipping girls with skills to explore Science, Tech,

  2. GE Opens New Global R&D Center in Brazil - GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Opens New Global R&D Center in Brazil; Working with Petrobras and BG Group to develop advanced technologies for oil and gas processing on the seabed Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Opens New Global R&D Center in Brazil; Working with Petrobras and BG Group to develop advanced technologies for

  3. GE partners with Matthew Dear to create "Drop Science" | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Partners with Matthew Dear to Create "Drop Science" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with Matthew Dear to Create "Drop Science" Every machine has its own acoustic signature - a precise frequency that indicates whether that machine is operating at peak

  4. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year $599,000 program to reduce engine noise during takeoffs and landings NISKAYUNA, NY - JUNE 10, 2015 - Scientists

  5. GE funds initiative to support STEM initiatives in Oklahoma ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    STEM Empowers OK: Initiative to enrich STEM education in Oklahoma On April 21, 2015, GE announced a grant to the state of Oklahoma to enhance STEM education initiatives. Jeff ...

  6. Electronic and magnetic properties of Si substituted Fe3Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirmmore » these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.« less

  7. GE Progetti 3i Spa | Open Energy Information

    Open Energy Info (EERE)

    Progetti 3i Spa Jump to: navigation, search Name: GE Progetti & 3i Spa Place: Narni, Italy Sector: Renewable Energy Product: Italy-based engineering firm that is involved with the...

  8. Bringing a Digital Mindset to Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a theme here? This week, GE joined the UI LABS-led Digital Manufacturing Design and Innovation Institute (DMDII) in announcing the creation of an open-source platform that will...

  9. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  10. The role of surface passivation in controlling Ge nanowire faceting

    SciTech Connect (OSTI)

    Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

    2015-11-05

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.

  11. "Big Picture" Process Modeling Tools |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click ...

  12. Pattern Recognition and Image Analysis in Materials | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in new window) Pattern Recognition and Image Analysis in Materials Jim Grande 2012.09.25 Hi I'm Jim Grande and I've been working at GE Global Research in Niskayuna for over 33...

  13. Steve Duclos, Chief Scientist, GE Global Research, Research Priorities...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SessionC3Duclos-GE.pdf More Documents & Publications Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Iowa lab gets...

  14. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  15. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    "Mark Little, Senior Vice President, GE Global Research" and footage of a man in a suit. ... A good example of this today is solid-oxide fuel cells. Footage of a photo of a man in ...

  16. The role of surface passivation in controlling Ge nanowire faceting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

    2015-11-05

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of themore » precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.« less

  17. Notrees 1B (GE Energy) Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    W 60,000,000,000 mW 0.06 GW Number of Units 40 Commercial Online Date 2009 Wind Turbine Manufacturer GE Energy References Wind Energy Market Intelligence1 Loading map......

  18. Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Governor Cuomo Announces 100 Businesses Led by GE to Join 500 Million Partnership with ... Click to share on Tumblr (Opens in new window) Governor Cuomo Announces 100 Businesses Led ...

  19. GE, Clean Energy Fuels Partner to Expand Natural Gas Highway...

    Open Energy Info (EERE)

    GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 -...

  20. Scientists Develop Sensors Based on Butterfly Wings | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Bio-inspired Design from GE reported in Nature Communications Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share ...

  1. How Will We Live Forever? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    angCaicloudcomputingV Robots and Predix make Beijing's CT factory brilliant IMG0475 Innovation 247: We're Always Open 1-2-111-v-ge-getfit-balanced-lifestyle A Balanced...

  2. Invention Factory: How Will Robots Evolve | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in your browser. You Might Also Like direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open shutterstock316484033...

  3. ARM - VAP Product - mmcrmode3ge200309091cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Productsmmcrmodemmcrmode3ge200309091cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027343 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200309091CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments Active Dates 2003.09.27 - 2004.08.10

  4. ARM - VAP Product - mmcrmode3ge200804181cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Productsmmcrmodemmcrmode3ge200804181cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027350 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200804181CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments, 20080418 version Active Dates 2008.04.18 - 2011.01.04

  5. Advanced Technology & Discovery at Niskayuna | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology & Discovery at Niskayuna Technology & Discovery at Niskayuna Capture the momentum behind leading-edge technologies from advanced manufacturing to supercomputing at GE's research headquarters. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Featured Technologies Controls Controls at GE are used in

  6. Arc Vault Significantly Reduces Electrical Hazards | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Arc Vault Significantly Reduces Electrical Hazards Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Arc Vault Significantly Reduces Electrical Hazards GE Global Research 2012.05.01 Recently, technology developed at GE Global Research received high praise from industry leaders for its ability to shield industrial -

  7. AC transport in p-Ge/GeSi quantum well in high magnetic fields

    SciTech Connect (OSTI)

    Drichko, I. L.; Malysh, V. A.; Smirnov, I. Yu.; Golub, L. E.; Tarasenko, S. A.; Suslov, A. V.; Mironov, O. A.; Kummer, M.; Känel, H. von

    2014-08-20

    The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.3–5.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the “two-site” model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|≈4.5. It is shown that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.

  8. Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

    SciTech Connect (OSTI)

    Dong, Yi; Rehman, Habib ur; Springborg, Michael

    2015-01-22

    The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.

  9. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Labs Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  10. Flat Ge-doped optical fibres for food irradiation dosimetry

    SciTech Connect (OSTI)

    Noor, N. Mohd; Jusoh, M. A.; Razis, A. F. Abdull; Alawiah, A.; Bradley, D. A.

    2015-04-24

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%.

  11. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  12. Reducing 68Ge Background in Dark Matter Experiments

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Orrell, John L.

    2011-03-01

    Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.

  13. CEBAF SRF Performance during Initial 12 GeV Commissioning

    SciTech Connect (OSTI)

    Bachimanchi, Ramakrishna; Allison, Trent; Daly, Edward; Drury, Michael; Hovater, J; Lahti, George; Mounts, Clyde; Nelson, Richard; Plawski, Tomasz

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) energy upgrade from 6 GeV to 12 GeV includes the installation of eleven new 100 MV cryomodules (88 cavities). The superconducting RF cavities are designed to operate CW at an accelerating gradient of 19.3 MV/m with a QL of 3×107. Not all the cavities were operated at the minimum gradient of 19.3 MV/m with the beam. Though the initial 12 GeV milestones were achieved during the initial commissioning of CEBAF, there are still some issues to be addressed for long term reliable operation of these modules. This paper reports the operational experiences during the initial commissioning and the path forward to improve the performance of C100 (100 MV) modules.

  14. RHIC 100 GeV Polarized Proton Luminosity

    SciTech Connect (OSTI)

    Zhang, S. Y.

    2014-01-17

    A big problem in RHIC 100 GeV proton run 2009 was the significantly lower luminosity lifetime than all previous runs. It is shown in this note that the beam intensity decay in run 2009 is caused by the RF voltage ramping in store. It is also shown that the beam decay is not clearly related to the beam momentum spread, therefore, not directly due to the 0.7m. β* Furthermore, the most important factor regarding the low luminosity lifetime is the faster transverse emittance growth in store, which is also much worse than the previous runs, and is also related to the RF ramping. In 100 GeV proton run 2012a, the RF ramping was abandoned, but the β* was increased to 0.85m, with more than 20% loss of luminosity, which is not necessary. It is strongly suggested to use smaller β* in 100 GeV polarized proton run 2015/2016

  15. Nanotextured Anti-Icing Surfaces | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Demonstrate Promising Anti-icing Nano Surfaces Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In addition to dramatically reducing ice adhesion, these surfaces

  16. The Technology Behind the Locomotives | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Happy Train Day: Celebrating the Bright Minds & Tech Behind GE's Locomotives Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Happy Train Day: Celebrating the Bright Minds & Tech Behind GE's Locomotives Roy Primus 2014.05.10 It may be hard to believe, but in today's world of faster, stronger, smarter and cheaper,

  17. Itinerant magnetism in metallic CuFe2Ge2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, K. V.; Singh, David J.; He, Ruihua

    2015-03-25

    Theoretical calculations are performed to understand the electronic structure and magnetic properties of CuFe2Ge2. The band structure reveals large electron density N(EF) at the Fermi level suggesting a strong itinerant character of magnetism. The Fermi surface is dominated by two dimensional sheet like structures, with potentially strong nesting between them. The magnetic ground state appears to be ferromagnetic along a and antiferromagnetic in other directions. The results show that CuFe2Ge2 is an antiferromagnetic metal, with similarities to the Fe-based superconductors; such as magnetism with substantial itinerant character and coupling between magnetic order and electrons at the Fermi energy.

  18. Durathon Battery in New Bus | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Battery-Dominant Fuel Cell Bus Uses New Durathon(tm) Battery Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Battery-Dominant Fuel Cell Bus Uses New Durathon(tm) Battery Researchers at GE Global Research, the General Electric Company's (NYSE: GE) technology development arm, have achieved a first step in reducing the

  19. Field-induced quantum criticality in YbAgGe

    SciTech Connect (OSTI)

    Bud'ko, S.; Canfield, P.

    2008-01-01

    YbAgGe is one of the very few stoichiometric, Yb-based, heavy fermion materials that exhibit field-induced quantum criticality. We will present an overview of thermodynamic and transport measurements in YbAgGe single crystals. Moderate magnetic field (45-90 kOe, depending on orientation) suppresses long range magnetic order, giving rise to non-Fermi-liquid behavior followed at higher field by a crossover to a heavy Fermi-liquid. Given the more accessible temperature and field scales, a non-Fermi liquid region rather than point for T {yields} 0 K may be detected.

  20. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Low-Cost Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Low-Cost Thermal Imaging Taking heat detection to a new level of sensitivity and speed, a team of scientists at GE Global Research, the technology development arm for the General Electric Company (NYSE: GE),

  1. High Performance Computing for Manufacturing Parternship | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency NISKAYUNA, NY, February 17,

  2. Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Governor Cuomo Announces 100 Businesses Led by GE to Join $500 Million Partnership with State to Develop Next-Generation Power Electronics, Creating Thousands of Jobs in Capital Region and Upstate Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Governor Cuomo Announces 100 Businesses Led by GE to Join $500 Million

  3. Cloud-Based Air Traffic Management Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Works to Bring Air Traffic Management Into "The Cloud" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Works to Bring Air Traffic Management Into "The Cloud" A global leader in avionics and software development, the General Electric Company (NYSE: GE) has embarked on an 18-month project with the

  4. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J.; Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J.; Aoki, Toshihiro

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamondcubic lattice.

  5. PROJECT PROFILE: General Electric – GE Global Research

    Broader source: Energy.gov [DOE]

    GE Global Research and Southwest Research Institute will develop an optimal compression system for a modular supercritical carbon dioxide (sCO2) power block operation in highly transient CSP tower applications. Supercritical carbon dioxide can be used to replace steam in CSP applications and gets a much greater power output at a lower cost.

  6. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; et al

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  7. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-12-01

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  8. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  9. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  10. A new physics era at 12 GeV | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A new physics era at 12 GeV January 29, 2015 In several articles over the past years, we ... These are the harbingers of a new era, that of 12 GeV operations and physics. We have been ...

  11. GE to DOE General Counsel; Re:Request for Comment on Large Capacity...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE urges the...

  12. Xianggelila Xian Ge Ji Liu Yu Xia Zhi En Hydroelectric Development...

    Open Energy Info (EERE)

    Ge Ji Liu Yu Xia Zhi En Hydroelectric Development Ltd Jump to: navigation, search Name: Xianggelila Xian Ge Ji Liu Yu Xia Zhi En Hydroelectric Development Ltd Place: Xianggelila...

  13. Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in an experimental hall, recording the first data of the 12 GeV era. The machine sent electrons around the racetrack three times (known as "3-pass" beam), resulting in 6.11 GeV...

  14. GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers

    Broader source: Energy.gov [DOE]

    GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...

  15. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  16. Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration High Energy Physics ... 07.01.13 Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Scientists ...

  17. GE-Prolec CCE Meeting October 19,2010 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    EERE-2010-BT-CE-0014 GE-Prolec CCE Meeting October 19,2010 More Documents & Publications Microsoft PowerPoint - GE-Prolec CCE Meeting 10192010 Microsoft Word -...

  18. High spin polarization in CoFeMnGe equiatomic quaternary Heusler...

    Office of Scientific and Technical Information (OSTI)

    Title: High spin polarization in CoFeMnGe equiatomic quaternary Heusler alloy We report the structure, magnetic property, and spin polarization of CoFeMnGe equiatomic...

  19. Illuminating the 130 GeV Gamma Line with Continuum Photons (Journal...

    Office of Scientific and Technical Information (OSTI)

    Illuminating the 130 GeV Gamma Line with Continuum Photons Citation Details In-Document Search Title: Illuminating the 130 GeV Gamma Line with Continuum Photons Authors: Cohen,...

  20. Xiang Ge Li La Xian Mai Di He Hydro Power Development Co Ltd...

    Open Energy Info (EERE)

    Xiang Ge Li La Xian Mai Di He Hydro Power Development Co Ltd Jump to: navigation, search Name: Xiang Ge Li La Xian Mai Di He Hydro Power Development Co., Ltd. Place: Yunnan...

  1. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Citation Details In-Document Search Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with ...

  2. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    in GeO 2 glass with coordination number >6 This content will become publicly available on September 29, 2016 Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with ...

  3. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: Ultrahigh-pressure polyamorphism in GeO 2 ... Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 ...

  4. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  5. Discovery of GeV Emission tfrom the Circinus Galaxy with the...

    Office of Scientific and Technical Information (OSTI)

    Discovery of GeV Emission tfrom the Circinus Galaxy with the Fermi-Lat Citation Details In-Document Search Title: Discovery of GeV Emission tfrom the Circinus Galaxy with the...

  6. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    SciTech Connect (OSTI)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A.; Nicotra, G.; Bollani, M.; Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F.; Capellini, G.; Isella, G.; Osmond, J.

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  7. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R.

    2014-02-01

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  8. Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy PowerPoint - GE-Prolec CCE Meeting 10/19/2010 Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 PowerPoint slides on GE-Prolec CCE meeting regarding Docket No. EERE-2010-BT-CE-0014 PDF icon Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 More Documents & Publications GE-Prolec CCE Meeting October 19,2010 EA-1565: Final Environmental Assessment Benefits of Using Mobile Transformers and Mobile Substations for Rapidly Restoring Electrical Service: a Report to the United

  9. GRB 131231A: IMPLICATIONS OF THE GeV EMISSION

    SciTech Connect (OSTI)

    Liu, Bin; Chen, Wei; Liang, Yun-Feng; Zhou, Bei; He, Hao-Ning; Jin, Zhi-Ping; Fan, Yi-Zhong; Wei, Da-Ming [Key laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Tam, Pak-Hin Thomas [Institute of Astronomy and Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Shao, Lang, E-mail: liangyf@pmo.ac.cn, E-mail: beizhou@pmo.ac.cn, E-mail: yzfan@pmo.ac.cn, E-mail: dmwei@pmo.ac.cn, E-mail: phtam@phys.nthu.edu.tw [Department of Physics, Hebei Normal University, Shijiazhuang 050024 (China)

    2014-05-20

    GRB 131231A was detected by the Large Area Telescope on board the Fermi Space Gamma-ray Telescope. The high-energy gamma-ray (>100MeV) afterglow emission spectrum is F {sub ?}??{sup 0.54} {sup } {sup 0.15} in the first ?1300s after the trigger and the most energetic photon has an energy of ?62GeV, arriving at t ? 520s. With reasonable parameters of the gamma-ray burst (GRB) outflow as well as the density of the circum-burst medium, the synchrotron radiation of electrons or protons accelerated at an external forward shock have difficulty accounting for the data. Rather, the synchrotron self-Compton radiation of the forward shock-accelerated electrons can account for both the spectrum and temporal behavior of theGeV afterglow emission. We also show that the prospect for detecting GRB 131231A-like GRBs with the Cherenkov Telescope Array is promising.

  10. The 12 GeV Energy Upgrade at Jefferson Laboratory

    SciTech Connect (OSTI)

    Pilat, Fulvia C.

    2012-09-01

    Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

  11. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  12. Nucleon Form Factors above 6 GeV

    DOE R&D Accomplishments [OSTI]

    Taylor, R. E.

    1967-09-01

    This report describes the results from a preliminary analysis of an elastic electron-proton scattering experiment... . We have measured cross sections for e-p scattering in the range of q{sup 2} from 0.7 to 25.0 (GeV/c){sup 2}, providing a large region of overlap with previous measurements. In this experiment we measure the cross section by observing electrons scattered from a beam passing through a liquid hydrogen target. The scattered particles are momentum analyzed by a magnetic spectrometer and identified as electrons in a total absorption shower counter. Data have been obtained with primary electron energies from 4.0 to 17.9 GeV and at scattering angles from 12.5 to 35.0 degrees. In general, only one measurement of a cross section has been made at each momentum transfer.

  13. Meson Spectroscopy at JLab@12 GeV

    SciTech Connect (OSTI)

    Celentano, Andrea

    2013-03-01

    Meson, being the simplest hadronic bound system, is the ideal "laboratory" to study the interaction between quarks, to understand the role of the gluons inside hadrons and to investigate the origin of color confinement. To perform such studies it is important to measure the meson spectrum, with precise determination of resonance masses and properties, looking for rare qbar q states and for unconventional mesons with exotic quantum numbers (i.e. mesons with quantum numbers that are not compatible with a qbar q structure). With the imminent advent of the 12 GeV upgrade of Jefferson Lab a new generation of meson spectroscopy experiments will start: "Meson-Ex" in Hall B and "GLUEX" in Hall D. Both will use photo-production to explore the spectrum of mesons in the light-quark sector, in the energy range of few GeVs.

  14. Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition

    SciTech Connect (OSTI)

    Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E.

    2011-05-01

    The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

  15. Industrial Dojo Program Fosters Industrial Internet Development | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Launches Cloud Foundry 'Industrial Dojo,' Contributes to Open Source to Foster Continued Development of the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Launches Cloud Foundry 'Industrial Dojo,' Contributes to Open Source to Foster Continued Development of the Industrial Internet

  16. Engineering Camp Puts STEAM Roller in Motion |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Institute Exposes Young Girls to Engineering Fields Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Engineering Institute Exposes Young Girls to Engineering Fields Cheryl Sabourin 2014.08.13 GE Global Research recently hosted 30 middle schools students from the Niskayuna Engineering Institute for Young

  17. Advanced Technology & Discovery at Munich | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology & Discovery at Munich Technology & Discovery at Munich Interact with groundbreaking scientific and technological solutions across nearly all industries at GE's hub in Central Europe. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Featured Technologies Composite Manufacturing This discipline focuses

  18. Advanced Technology & Discovery at Shanghai | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology & Discovery at Shanghai Technology & Discovery at Shanghai Connect with sustainable infrastructure and healthcare technologies introduced to the world through GE's "In China for China" strategy. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Featured Technologies Non-Thermal Brine

  19. Stump the Scientist | Page 2 of 3 | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stump the Scientist Curiosity is the inventor's greatest tool. Ask us your question about science or technology and see what our scientists say! Home > Invention > Stump the Scientist Are Permanent Magnets Really Permanent? Watch the Video » Do Molecules Get Old? Watch the Video » Ready to Stump the Scientist? Try your hand at leaving our researchers speechless. Submit Question » Is Wireless Electricity Possible? Watch the Video » Who Is Jim Bray, GE Stump the Scientist? Watch the

  20. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  1. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey

    2015-01-01

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  2. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

    SciTech Connect (OSTI)

    Fei, Ruixiang; Yang, Li; Li, Wenbin; Li, Ju

    2015-10-26

    We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS{sub 2} and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique “puckered” C{sub 2v} symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  3. Characterization of second-phase plates in a Gd5Ge3 intermetallic compound

    SciTech Connect (OSTI)

    Cao, Qing; Chumbley, Leonard S.

    2013-05-16

    Rare-earth compounds based on the stoichiometry R5(SixGe1?x)4 (R = rare-earth elements) exhibit many unusual features, including possessing R5(SixGe1?x)3 thin plates which always precipitate from the matrix despite efforts to suppress their formation. In an effort to better understand the unique relationship between these two intermetallic alloy systems, the bulk microstructure of the compound Gd5Ge3 was examined using scanning (SEM) and transmission electron microscopy (TEM) and optical microscopy. Surprisingly, SEM examination revealed a series of thin plates present in the Gd5Ge3 matrix similar to what is seen in Gd5Ge4. TEM observation revealed that a role reversal had occurred, with the thin plates possessing the orthorhombic structure and composition of Gd5Ge4. The orientation relationship between Gd5Ge4 thin plates and the Gd5Ge3 matrix was determined to be Graphic the same relationship reported for Gd5Ge3 plates precipitating from a Gd5Ge4 matrix. However, by exchanging the respective roles of the phases as regards matrix vs. precipitate, the total number of precipitation variants seen can be increased from two to six. The persistence with which these two intermetallic systems co-exist is truly unique. However, understanding exactly the kinetic and thermodynamic conditions that lead to their unique relationship is hampered by the high formation temperatures at which the observed reaction occurs.

  4. Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers

    SciTech Connect (OSTI)

    Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo; Lei, Xiao-Wu

    2013-10-15

    One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

  5. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5 lower effective mass for s-InSb compared to s-Ge quantum well at 1.9??10{sup 12}?cm{sup 2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  6. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    SciTech Connect (OSTI)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-03-22

    The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  7. Observation of optical spin injection into Ge-based structures at room temperature

    SciTech Connect (OSTI)

    Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu; Yaguchi, Hiroyuki

    2013-06-17

    Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

  8. Water Treatment in Oil and Gas Production | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water Treatment and Reuse in Unconventional Gas Production Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Water Treatment and Reuse in Unconventional Gas Production A key challenge in tapping vast reserves of natural gas from shale deposits is treating the water that is used to bring this gas to the surface. GE

  9. Inventors in Action: Energy Everywhere | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inventors in Action: Energy Everywhere Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inventors in Action: Energy Everywhere Different parts of the world present different problems and have different needs in the quest to deliver clean, efficient power to homes and businesses. In this Google+ Hangout, GE experts from

  10. Hybrid and Electric Traction Motor | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A World-Class Traction Motor for Hybrid and Electric Vehicles Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A World-Class Traction Motor for Hybrid and Electric Vehicles Engineers at GE Global Research are advancing motor technology that could have a substantial impact on hybrid and electric vehicles (EVs) of the

  11. Oil & Gas Technology at Oklahoma City | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oklahoma City, USA > Technology & Discovery at Oklahoma City Technology & Discovery at Oklahoma City Experience efforts to safely, efficiently and reliably accelerate oil and gas industry-changing solutions at GE's newest global research facility. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Areas of

  12. What Works Summit on Manufacturing Innovation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    What Works Summit on Manufacturing Innovation Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) What Works Summit on Manufacturing Innovation Glen Merfeld 2012.02.20 Last week, GE held a four-day summit in Washington, D.C., focused on the long-term economic and industry growth of the United States. Discussion focused on

  13. Women in Science and Engineering Are Online | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Science and Engineering Are Online Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Women in Science and Engineering Are Online Kristen Brosnan 2012.12.04 Today, GE Global Research is kicking-off our two-day Women in Science and Engineering (WISE) Symposium. The event is aimed at discussing best practices for

  14. Work & Life at Munich | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Work & Life at Munich Work & Life at Munich Living at Germany's Cosmopolitan Crossroads offers easy access to outdoor pursuits in the Alps and travel throughout Europe. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Employee Organizations GE Volunteers Our volunteers commit each year to multiple events such as

  15. Working on Advanced Battery Technologies With National Labs | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Working on Advanced Battery Technologies With National Labs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Working on Advanced Battery Technologies With National Labs Yan Gao 2011.07.27 Yan Gao is a Senior Scientist in the Chemical and Structure Analysis Laboratory at GE-GRC in Niskayuna NY. Yan

  16. Digital Twins of physical assets prevents unplanned downtime | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research a 'Digital Twin' for physical assets can help achieve no unplanned downtime Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) How a 'Digital Twin' for physical assets can help achieve no unplanned downtime Mark Grabb and Matt Nielsen, data scientists at GE Global Research, explain the importance of data

  17. Supercomputing with Livermore National Lab | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Working With Livermore National Lab on Supercomputing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Working With Livermore National Lab on Supercomputing GE Global Research has been selected by Lawrence Livermore National Laboratory (LLNL) to participate in an incubator program that will use high-performance computing

  18. A Balanced Lifestyle Makes Time for Exercise | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Balanced Lifestyle Makes Time for Exercise Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A Balanced Lifestyle Makes Time for Exercise Jim Bray 2012.09.18 In the past few weeks, we've shared #GetFit stories from our Niskayuna and San Ramon sites. GE Healthcare's #getfit campaign is a social media initiative to drive

  19. Unimpossible Missions: The University Edition | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Can you do the impossible? Enter our Unimpossible Missions: The University Edition challenge Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Can you do the impossible? Enter our Unimpossible Missions: The University Edition challenge Earlier this year, three teams of GE Global Research

  20. Really Cool Models of Ice Nucleation | GE Global Research

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    Really Cool Models of Ice Nucleation Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Really Cool Models of Ice Nucleation Rick Arthur 2013.08.20 I'm excited to highlight some progress GE Research has made in modeling the formation of ice from water droplets in contact with cold surfaces. For several years, a

  1. Meeting Energy Needs in Brazil |GE Global Research

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    Looking a Decade Ahead: Electrical Power Generation in Brazil Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de Janeiro (GRC-R), we research both new

  2. High-Speed Network Enables Industrial Internet | GE Global Research

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    Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light Speed to the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light Speed to the Industrial Internet New fiber optic network

  3. How Will We Power the Planet? | GE Global Research

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    Power The Planet? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Invention Factory: How Will We Power The Planet? In this episode of Invention Factory, a collaboration between GE and Vice, we look at sustainable energy sources generating power in unexpected ways. From trash to the ocean's tidal energy - all the energy

  4. Industrial Materials and Inspection Technologies | GE Global Research

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    Industrial Materials and Inspection Technologies Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Industrial Materials and Inspection Technologies Waseem Faidi 2013.06.12 Hi, I am Waseem Faidi and I lead the Inspection and Metrology Lab at GE Global Research in developing novel inspection and process monitoring solutions

  5. Innovate in China, Innovate for China | GE Global Research

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    Innovate in China, Innovate for China Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Innovate in China, Innovate for China Xiangli Chen, Ph.D. 2015.06.05 15 years is nothing but a fleeting moment. I can still recall the day when a 10-member GE China technology team settled in Shanghai 15 years ago. Back then, we had an

  6. BBQ -- Is It Science or Art? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BBQ - Is it Science or Art? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ - Is it Science or Art? Lynn DeRose 2015.03.13 This is the first in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant Super-Smoker is outfitted with sensors to

  7. Application of RTG (SiGe) technology to MESUR

    SciTech Connect (OSTI)

    Vicente, F.A. )

    1993-01-15

    This paper discusses providing electrical power for the Mars Environmental Survey (MESUR) mission. The use of radioisotope thermoelectric generator (RTG) technology using SiGe enables total satisfaction of the mission requirements. This technology permits placing the survey landers at any location on Mars, with the capability of transmitting data directly to Earth. If a relay satellite is deployed, the modular construction of the RTG permits tailoring the power to match that mission configuration. Presented are various configurations and trades directed toward achieving operational status, first with a pathfinder'' mission and subsequently with the full complement of landers.

  8. Diamond turning of Si and Ge single crystals

    SciTech Connect (OSTI)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  9. ARM - VAP Product - mmcrmode3ge200404141cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4141cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027344 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200404141CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments, 20040415 version Active Dates 2004.04.15 - 2007.11.27 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  10. ARM - VAP Product - mmcrmode3ge200408121cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8121cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027345 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200408121CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (8/04-5/05) Active Dates 2004.08.13 - 2008.04.17 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements The

  11. ARM - VAP Product - mmcrmode3ge200511041cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    511041cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027346 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200511041CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (since 11/2005) Active Dates 2005.11.04 - 2011.02.27 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  12. ARM - VAP Product - mmcrmode3ge200606161cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    6161cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1095384 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200606161CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (version 6/2006) Active Dates 2006.06.21 - 2011.03.07 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  13. ARM - VAP Product - mmcrmode3ge200608161cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8161cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027348 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200608161CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (version 11/2006) Active Dates 2006.11.27 - 2009.02.14 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  14. ARM - VAP Product - mmcrmode3ge200712011cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    712011cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027349 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200712011CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments Active Dates 2008.01.01 - 2011.03.23 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements The

  15. Slow Mo Guys and Cold Spray | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Slow Mo Guys and Cold Spray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Slow Mo Guys and Cold Spray ) The Slow Mo Guys came to GE Global Research in Niskayuna to film our researchers demonstrate a process called "cold spray", in which metal powders are sprayed at high velocities to build a part or add

  16. BELLA generates multi-GeV electron beam

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BELLA generates multi-GeV electron beam Click to share on Facebook (Opens in new window) Click to share on Twitter (Opens in new window) Click to share on Reddit (Opens in new window) Click to share on Pinterest (Opens in new window) Berkeley Lab scientists want to develop accelerators in such a way that accessing the light produced by beams is much less expensive and can be performed in much smaller settings. This image showa a 9 cm long capillary discharge waveguide used in BELLA experiments

  17. GE Partners with Lab on Ultrasonic Clothes Dryer | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GE Partners with Lab on Ultrasonic Clothes Dryer GE Partners with Lab on Ultrasonic Clothes Dryer Addthis Description This video tells how a partnership between Oak Ridge National Laboratory and GE Appliances--with support from the Office of Energy Efficiency and Renewable Energy's (EERE's) Building Technologies Office-is changing the way Americans do laundry with their ultrasonic drying technology that uses vibrations, not heat, to dry fabric. Text Version This is going to be a game-changing

  18. Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells

    SciTech Connect (OSTI)

    Fan, W. J.

    2013-11-14

    Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band kp method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30??10{sup 18}?cm{sup ?3}.

  19. Jefferson Lab Accelerator Delivers Its First 12 GeV Electrons | Jefferson

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lab Accelerator Delivers Its First 12 GeV Electrons On December 14, full-energy 12 GeV electron beam was provided for the first time, to the Experimental Hall D complex, located in the upper, left corner of this aerial photo of the Continuous Electron Beam Accelerator Facility. Hall D is the new experimental research facility - added to CEBAF as part of the 12 GeV Upgrade project. Beam was also delivered to Hall A (dome in the lower left). Jefferson Lab Accelerator Delivers Its First 12 GeV

  20. Charge trapping of Ge-nanocrystals embedded in TaZrO{sub x} dielectric films

    SciTech Connect (OSTI)

    Lehninger, D. Seidel, P.; Geyer, M.; Schneider, F.; Heitmann, J.; Klemm, V.; Rafaja, D.; Borany, J. von

    2015-01-12

    Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO{sub x} by thermal annealing of co-sputtered Ge-TaZrO{sub x} layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.

  1. Commissioning of the 123 MeV injector for 12 GeV CEBAF

    SciTech Connect (OSTI)

    Wang, Yan; Hofler, Alicia S.; Kazimi, Reza

    2015-09-01

    The upgrade of CEBAF to 12GeV included modifications to the injector portion of the accelerator. These changes included the doubling of the injection energy and relocation of the final transport elements to accommodate changes in the CEBAF recirculation arcs. This paper will describe the design changes and the modelling of the new 12GeV CEBAF injector. Stray magnetic fields have been a known issue for 6 GeV CEBAF injector, the results of modelling the new 12GeV injector and the resulting changes implemented to mitigate this issue are describe in this paper. The results of beam commissioning of the injector are also presented.

  2. The Ho-Ni-Ge system: Isothermal section and new rare-earth nickel

    Office of Scientific and Technical Information (OSTI)

    germanides (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: The Ho-Ni-Ge system: Isothermal section and new rare-earth nickel germanides Citation Details In-Document Search Title: The Ho-Ni-Ge system: Isothermal section and new rare-earth nickel germanides The Ho-Ni-Ge system has been investigated at 1070 K and up to ~60 at% Ho by X-ray diffraction and microprobe analyses. Besides the eight known compounds, HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type),

  3. Another SunShot Success: GE to Make PrimeStar Solar Panels at...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Yesterday, General Electric (GE) announced that it will build a new thin-film photovoltaic ... printing technology to make tiny high-concentrating photovoltaic (HCPV) cells. ...

  4. ON THE PROGENITOR AND SUPERNOVA OF THE SN 2002cx-LIKE SUPERNOVA 2008ge ,

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect ON THE PROGENITOR AND SUPERNOVA OF THE SN 2002cx-LIKE SUPERNOVA 2008ge , Citation Details In-Document Search Title: ON THE PROGENITOR AND SUPERNOVA OF THE SN 2002cx-LIKE SUPERNOVA 2008ge , We present observations of supernova (SN) 2008ge, which is spectroscopically similar to the peculiar SN 2002cx, and its pre-explosion site indicating that its progenitor was probably a white dwarf. NGC 1527, the host galaxy of SN 2008ge, is an S0 galaxy with no evidence

  5. GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd...

    Open Energy Info (EERE)

    Kvaerner Power Equipment Co Ltd Kvaerner Hangfa Jump to: navigation, search Name: GE Hydro Asia Co Ltd (formerly Kvaerner Power Equipment Co., Ltd (Kvaerner Hangfa)) Place:...

  6. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Vestrand, W. Thomas Los Alamos National Laboratory Astronomy & Astrophysics(79) Astronomy and Astrophysics Astronomy...

  7. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers,more » the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.« less

  8. Search for GeV GRBs at Chacaltaya

    SciTech Connect (OSTI)

    Castellina, A.; Ghia, P. L.; Morello, C.; Trinchero, G.; Vallania, P.; Vernetto, S.; Navarra, G.; Saavedra, O.; Yoshii, H.; Kaneko, T.; Kakimoto, K.; Nishi, K.; Cabrera, R.; Urzagasti, D.; Velarde, A.; Barthelmy, S. D.; Butterworth, P.; Cline, T. L.; Gehrels, N.; Fishman, G. J.

    1998-05-16

    In this paper we present the results of a search for GeV Gamma Ray Bursts made by the INCA experiment during the first 9 months of operation. INCA, an air shower array located at Mount Chacaltaya (Bolivia) at 5200 m a.s.l., has been searching for GRBs since December 1996. Up to August, 1997, 34 GRBs detected by BATSE occurred in the field of view of the experiment. For any burst, the counting rate of the array in the 2 hours interval around the burst trigger time has been studied. No significant excess has been observed. Assuming for the bursts a power low energy spectrum extending up to 1 TeV with a slope {alpha}=-2 and a duration of 10 s, the obtained 1 GeV-1 TeV energy fluence upper limits range from 7.9 10{sup -5} erg cm{sup -2} to 3.5 10{sup -3} erg cm{sup -2} depending on the event zenith angles.

  9. Conduction band offset at GeO{sub 2}/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

    SciTech Connect (OSTI)

    Zhang, W. F.; Nishimula, T.; Nagashio, K.; Kita, K.; Toriumi, A.

    2013-03-11

    We report a consistent conduction band offset (CBO) at a GeO{sub 2}/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 {+-} 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 {+-} 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO{sub 2} as a potential passivation layer for future Ge-based scaled CMOS devices.

  10. Pressure Safety of JLAB 12GeV Upgrade Cryomodule

    SciTech Connect (OSTI)

    Cheng, Gary; Wiseman, Mark A.; Daly, Ed

    2009-11-01

    This paper reviews pressure safety considerations, per the US Department of Energy (DOE) 10CFR851 Final Rule [1], which are being implemented during construction of the 100 Megavolt Cryomodule (C100 CM) for Jefferson Lab’s 12 GeV Upgrade Project. The C100 CM contains several essential subsystems that require pressure safety measures: piping in the supply and return end cans, piping in the thermal shield and the helium headers, the helium vessel assembly which includes high RRR niobium cavities, the end cans, and the vacuum vessel. Due to the vessel sizes and pressure ranges, applicable national consensus code rules are applied. When national consensus codes are not applicable, equivalent design and fabrication approaches are identified and implemented. Considerations for design, material qualification, fabrication, inspection and examination are summarized. In addition, JLAB’s methodologies for implementation of the 10 CFR 851 requirements are described.

  11. Complexes of self-interstitials with oxygen atoms in Ge

    SciTech Connect (OSTI)

    Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G.; Abrosimov, N. V.; Riemann, H.

    2014-02-21

    Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge subjected to irradiation at ?80 K and subsequently to annealing have been studied. To distinguish the processes involving vacancies and self-interstitials the doping with tin was used. It was shown that absorption lines with maximum at 602, 674, 713 and 803 cm{sup ?1} are self-interstitials-related. Two lines at 602 and 674, which develop upon annealing in the temperature range 180240 K, belong to IO complexes, while the bands at 713 and 803 cm{sup ?1}, which emerge after annealing at T>220 K, are associated with I{sub 2}O. It is argued that the annealing of IO occurs by two mechanisms: by dissociation and by diffusion.

  12. Effects of Laser Wavelength and Fluence in Pulsed Laser Deposition of Ge Films

    SciTech Connect (OSTI)

    Yap, Seong Shan; Reenaas, Turid Worren; Siew, Wee Ong; Tou, Teck Yong; Ladam, Cecile

    2011-03-30

    Nanosecond lasers with ultra-violet, visible and infrared wavelengths: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were used to ablate polycrystalline Ge target and deposit Ge films in vacuum (<10-6 Torr). Time-integrated optical emission spectra were obtained for laser fluence from 0.5-10 J/cm{sup 2}. Neutrals and ionized Ge species in the plasma plume were detected by optical emission spectroscopy. Ge neutrals dominated the plasma plume at low laser fluence while Ge{sup +} ions above some threshold fluence. The deposited amorphous thin-film samples consisted of particulates of size from nano to micron. The relation of the film properties and plume species at different laser fluence and wavelengths were discussed.

  13. Studies of beam halo formation in the 12GeV CEBAF design

    SciTech Connect (OSTI)

    Yves Roblin; Arne Freyberger

    2007-06-01

    Beam halo formation in the beam transport design for the Jefferson Lab 12GeV upgrade was investigated using 12GeV beam transport models as well as data from 6GeV CEBAF operations. Various halo sources were considered; these covered both nuclear interactions with beam gas as well as optics-related effects such as non linearities in the magnetic fields of the transport elements. Halo due to beam gas scattering was found to be less of a problem at 12GeV compared to the 6GeV machine. Halo due to non linear effects of magnetic elements was characterized as a function of beam orbit and functional forms of the distribution were derived. These functional forms were used as inputs in subsequent detector optimizations studies.

  14. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    SciTech Connect (OSTI)

    Prakash, A. P. Gnana Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  15. Parity Violation Inelastic Scattering Experiments at 6 GeV and 12 GeV Jefferson Lab

    SciTech Connect (OSTI)

    Sulkosky, Vincent A.; et. al.,

    2015-03-01

    We report on the measurement of parity-violating asymmetries in the deep inelastic scattering and nucleon resonance regions using inclusive scattering of longitudinally polarized electrons from an unpolarized deuterium target. The effective weak couplings C$_{2q}$ are accessible through the deep-inelastic scattering measurements. Here we report a measurement of the parity-violating asymmetry, which yields a determination of 2C$_{2u}$ - C$_{2d}$ with an improved precision of a factor of five relative to the previous result. This result indicates evidence with 95% confidence that the 2C$_{2u}$ - C$_{2d}$ is non-zero. This experiment also provides the first parity-violation data covering the whole resonance region, which provide constraints on nucleon resonance models. Finally, the program to extend these measurements at Jefferson Lab in the 12 GeV era using the Solenoidal Large Intensity Device was also discussed.

  16. Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films

    SciTech Connect (OSTI)

    Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

    2014-03-18

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50–1.00, where the films become GeO2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  17. EXC-12-0001, EXC-12-0002, EXC-12-0003- In the Matter of Philips Lighting Company, GE Lighting, and OSRAM SYLVANIA, Inc.

    Broader source: Energy.gov [DOE]

    On April 16, 2012, OHA issued a decision granting Applications for Exception filed respectively by Philips Lighting Company (Philips), GE Lighting (GE) and OSRAM SYLVANIA, Inc. (OSI) (collectively,...

  18. Hydrogen Sensor Based on Pd/GeO{sub 2} Using a Low Cost Electrochemical Deposition

    SciTech Connect (OSTI)

    Jawad, M. J.; Hashim, M. R.; Ali, N. K.

    2011-05-25

    This work reports on a synthesis of sub micron germanium dioxide (GeO{sub 2}) on porous silicon (PS) by electrochemical deposition. n-type Si (100) wafer was used to fabricate (PS) using conventional method of electrochemical etching in HF based solution. A GeCl{sub 4} was directly hydrolyzed by hydrogen peroxide to produce pure GeO{sub 2}, and then electrochemically deposited on PS. Followed by palladium (Pd) contact on GeO{sub 2} /PS was achieved by using RF sputtering technique. The grown GeO{sub 2} crystals were characterized using SEM and EDX. I-V characteristics of Pd/ GeO{sub 2} were recorded before and after hydrogen gas exposure as well as with different H{sub 2} concentrations and different applied temperatures. The sensitivity of Pd/ GeO{sub 2} also has been investigated it could be seen to increase significantly with increased hydrogen concentration while it decreased with increase temperature.

  19. Single-crystalline CuGeO{sub 3} nanorods: Synthesis, characterization and properties

    SciTech Connect (OSTI)

    Wang, Fangfang; Xing, Yan; Su, Zhongmin; Song, Shuyan

    2013-07-15

    Graphical abstract: - Highlights: Single crystalline CuGeO{sub 3} nanorods were prepared via a hydrothermal route. The material exhibits greatly enhanced activity in photocatalytic degradation of dyes. The magnetic susceptibility measurements indicate spin-Peierls transition properties. CuGeO{sub 3} nanorods may be of potential application in future integrated optical devices. - Abstract: Single crystalline CuGeO{sub 3} nanorods with a diameter of 2035 nm and a length up to 1 ?m have been prepared via a facile hydrothermal route with the assistance of ethylenediamine. Some influencing factors such as the reaction time, reaction temperature, the volume of ethylenediamine were revealed to play crucial roles in the formation of the CuGeO{sub 3} nanorods. A possible growth mechanism was proposed based on the experimental results. Significantly, this is the first time that CuGeO{sub 3} was used as a photocatalyst for organic pollutant degradation under UV light irradiation. The reaction constant (k) of CuGeO{sub 3} nanorods was five times that of the sample prepared by solid-state reaction under UV light irradiation. Additionally, the optical and magnetic properties of CuGeO{sub 3} nanorods were systematically studied.

  20. Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals

    SciTech Connect (OSTI)

    Maeta, Takahiro; Sueoka, Koji

    2014-08-21

    Ge-based substrates are being developed for applications in advanced nano-electronic devices because of their higher intrinsic carrier mobility than Si. The stability and diffusion mechanism of impurity atoms in Ge are not well known in contrast to those of Si. Systematic studies of the stable sites of 2nd to 6th row element impurity atoms in Ge crystal were undertaken with density functional theory (DFT) and compared with those in Si crystal. It was found that most of the impurity atoms in Ge were stable at substitutional sites, while transition metals in Si were stable at interstitial sites and the other impurity atoms in Si were stable at substitutional sites. Furthermore, DFT calculations were carried out to clarify the mechanism responsible for the diffusion of impurity atoms in Ge crystals. The diffusion mechanism for 3d transition metals in Ge was found to be an interstitial-substitutional diffusion mechanism, while in Si this was an interstitial diffusion mechanism. The diffusion barriers in the proposed diffusion mechanisms in Ge and Si were quantitatively verified by comparing them to the experimental values in the literature.

  1. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M.; Buljan, M.; Chahboun, A.; Roldan, M. A.; Molina, S. I.; Bernstorff, S.; Varela, M.; Pennycook, S. J.; Barradas, N. P.; Alves, E.

    2012-04-01

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  2. Hydrogen interaction kinetics of Ge dangling bonds at the Si{sub 0.25}Ge{sub 0.75}/SiO{sub 2} interface

    SciTech Connect (OSTI)

    Stesmans, A. Nguyen Hoang, T.; Afanas'ev, V. V.

    2014-07-28

    The hydrogen interaction kinetics of the GeP{sub b1} defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ?7??10{sup 12}?cm{sup ?2} at the SiGe/SiO{sub 2} interfaces of condensation grown (100)Si/a-SiO{sub 2}/Ge{sub 0.75}Si{sub 0.25}/a-SiO{sub 2} structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis of both defect passivation (pictured as GeP{sub b1}-H formation) in molecular hydrogen (?1?atm) and reactivation (GeP{sub b1}-H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP{sub b1}?+?H{sub 2}???GeP{sub b1}H?+?H and GeP{sub b1}H???GeP{sub b1}?+?H, which are found to be characterized by the average activation energies E{sub f}?=?1.44??0.04?eV and E{sub d}?=?2.23??0.04?eV, and attendant, assumedly Gaussian, spreads ?E{sub f}?=?0.20??0.02?eV and ?E{sub d}?=?0.15??0.02?eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t{sub a}???35?min, it is found that even for the optimum treatment temperature ?380?C, only ?60% of the GeP{sub b1} system can be electrically silenced, still far remote from device grade level. This ineffectiveness is concluded, for the major part, to be a direct consequence of the excessive spreads in the activation energies, ?23 times larger than for the Si DB P{sub b} defects at the standard thermal (111)Si/SiO{sub 2} interface which may be easily passivated to device grade levels, strengthened by the reduced difference between the average E{sub f} and E{sub d} values. Exploring the guidelines of the GST model indicates that passivation can be improved by decreasing T{sub an} and attendant enlarging of t{sub a}, however, at best still leaving ?2% defects unpassivated even for unrealistically extended anneal times. The average dissociation energy E{sub d}???2.23?eV, concluded as representing the GeP{sub b1}-H bond strength, is found to be smaller than the SiP{sub b}-H one, characterized by E{sub d}???2.83?eV. An energy deficiency is encountered regarding the energy sum rule inherent to the GST-model, the origin of which is substantiated to lie with a more complex nature of the forward passivation process than basically depicted in the GST model. The results are discussed within the context of theoretical considerations on the passivation of interfacial Ge DBs by hydrogen.

  3. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    SciTech Connect (OSTI)

    Ceylan, Abdullah Ozcan, Sadan; Rumaiz, Abdul K.; Caliskan, Deniz; Ozbay, Ekmel; Woicik, J. C.

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  4. Exclusive electroproduction of strange mesons with JLab 12 GeV (Conference)

    Office of Scientific and Technical Information (OSTI)

    | SciTech Connect Exclusive electroproduction of strange mesons with JLab 12 GeV Citation Details In-Document Search Title: Exclusive electroproduction of strange mesons with JLab 12 GeV We summarize the physics topics which can be addressed by measurements of high-Q^2 exclusive electroproduction of strange mesons, gamma* N -> phi N, K* Lambda, K Lambda, K Sigma, at Jefferson Lab with 11 GeV beam energy. The proposed investigations are aimed both at exploring the reaction mechanism

  5. JLab's 12 GeV Upgrade Project Clears Critical Hurdle | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    JLab's 12 GeV Upgrade Project Clears Critical Hurdle JLab's 12 GeV Upgrade Project Clears Critical Hurdle Independent Project Review committee members Independent Project Review committee members, visiting JLab to evaluate the readiness of the 12 GeV Upgrade project, tour Hall B during their site visit. Here they view the CEBAF Large Acceptance Spectrometer as Hall B Leader Volker Burkert and Lead Engineer Dave Kashy explain the system. NEWPORT NEWS, VA - The U.S. Department of Energy's Thomas

  6. 9 GeV energy gain in a beam-driven plasma wakefield accelerator (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect 9 GeV energy gain in a beam-driven plasma wakefield accelerator Citation Details In-Document Search Title: 9 GeV energy gain in a beam-driven plasma wakefield accelerator An electron beam has gained a maximum energy of 9 GeV per particle in a 1.3 m-long electron beam-driven plasma wakefield accelerator. The amount of charge accelerated in the spectral peak was 28.3 pC, and the root-mean-square energy spread was 5.0%. The mean accelerated charge and energy gain per

  7. Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 CEBAF_Aerial.jpg Jefferson Lab will officially end 6 GeV operations of the Continuous Electron Beam Accelerator Facility during a short ceremony planned for May 18 in the Machine Control Center. This aerial photo depicts the basic outline of the tunnel housing CEBAF - the accelerator and the experimental halls. NEWPORT NEWS, VA - The U.S. Department of Energy's

  8. Characterization of SiGe/Si multi-quantum wells for infrared sensing

    SciTech Connect (OSTI)

    Moeen, M.; Salemi, A.; stling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2013-12-16

    SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (22500??10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

  9. Observation of Parametric X-Rays Produced by 400-GeV/C Protons in Bent

    Office of Scientific and Technical Information (OSTI)

    Crystals (Journal Article) | SciTech Connect Parametric X-Rays Produced by 400-GeV/C Protons in Bent Crystals Citation Details In-Document Search Title: Observation of Parametric X-Rays Produced by 400-GeV/C Protons in Bent Crystals Spectral maxima of parametric X-ray radiation (PXR) produced by 400 GeV/c protons in bent silicon crystals aligned with the beam have been observed in an experiment at the H8 external beam of the CERN SPS. The total yield of PXR photons was about 10{sup -6} per

  10. Observation of parametric X-rays produced by 400 GeV/c protons in bent

    Office of Scientific and Technical Information (OSTI)

    crystals (Journal Article) | SciTech Connect parametric X-rays produced by 400 GeV/c protons in bent crystals Citation Details In-Document Search Title: Observation of parametric X-rays produced by 400 GeV/c protons in bent crystals Spectral maxima of parametric X-ray radiation (PXR) produced by 400 GeV/c protons in bent silicon crystals aligned with the beam have been observed in an experiment at the H8 external beam of the CERN SPS. The total yield of PXR photons was about 10{sup -6} per

  11. Influence of Y substitutions on the magnetism of Gd5Ge4 (Conference) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Influence of Y substitutions on the magnetism of Gd5Ge4 Citation Details In-Document Search Title: Influence of Y substitutions on the magnetism of Gd5Ge4 The interrelation between the specific crystallographic positions and their influence on the magnetism of neighboring atoms is examined from first principles electronic structure calculations using the Gd{sub 5}Ge{sub 4} compound as a model system. The predicted preferences of the specific occupations by nonmagnetic yttrium

  12. Research Perspectives at Jefferson Lab: 12 GeV and Beyond

    SciTech Connect (OSTI)

    Kees de Jager

    2002-09-01

    The plans for upgrading the CEBAF accelerator at Jefferson Lab to 12 GeV are presented. The research program supporting that upgrade are illustrated with a few selected examples. The instrumentation under design to carry out that research program is discussed. Finally, a conceptual design of a future upgrade which combines a 25 GeV fixed-target facility and an electron-ion collider facility at a luminosity of up to 10{sup 35}cm{sup -2}s{sup -1} and a CM energy of over 40 GeV.

  13. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect terahertz-induced response of GeSbTe phase-change materials Citation Details In-Document Search Title: Ultrafast terahertz-induced response of GeSbTe phase-change materials The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap

  14. Volume Reflection Dependence of 400 GeV/c Protons on the Bent Crystal

    Office of Scientific and Technical Information (OSTI)

    Curvature (Journal Article) | SciTech Connect Volume Reflection Dependence of 400 GeV/c Protons on the Bent Crystal Curvature Citation Details In-Document Search Title: Volume Reflection Dependence of 400 GeV/c Protons on the Bent Crystal Curvature The trend of volume reflection parameters (deflection angle and efficiency) in a bent (110) silicon crystal has been investigated as a function of the crystal curvature with 400 GeV/c protons on the H8 beam line at the CERN Super Proton

  15. Early Commissioning Experience and Future Plans for the 12 GeV Continuous Electron Beam Accelerator Facility

    SciTech Connect (OSTI)

    Spata, Michael F.

    2014-12-01

    Jefferson Lab has recently completed the accelerator portion of the 12 GeV Upgrade for the Continuous Electron Beam Accelerator Facility. All 52 SRF cryomodules have been commissioned and operated with beam. The initial beam transport goals of demonstrating 2.2 GeV per pass, greater than 6 GeV in 3 passes to an existing experimental facility and greater than 10 GeV in 5-1/2 passes have all been accomplished. These results along with future plans to commission the remaining beamlines and to increase the performance of the accelerator to achieve reliable, robust and efficient operations at 12 GeV are presented.

  16. Potential improvements in SiGe radioisotope thermoelectric generator performance

    SciTech Connect (OSTI)

    Mowery, A.L.

    1999-01-01

    In accordance with NASA{close_quote}s slogan: {open_quotes}Better, Cheaper, Faster,{close_quotes} this paper will address potential improvements to SiGe RTG technology to make them Better. RTGs are doubtless cheaper than {open_quotes}paper designs{close_quotes} which are better and cheaper until development, performance and safety test costs are considered. RTGs have the advantage of being fully developed and tested in the rigors of space for over twenty years. Further, unless a new system can be accelerated tested, as were the RTGs, they cannot be deployed reliably unless a number of systems have succeeded for test periods exceeding the mission lifetime. Two potential developments are discussed that can improve the basic RTG performance by 10 to 40{sup +}{percent} depending on the mission profile. These improvements could be demonstrated in years. Accelerated testing could also be performed in this period to preserve existing RTG reliability. Data from a qualification tested RTG will be displayed, while not definitive, to support the conclusions. Finally, it is anticipated that other investigators will be encouraged to suggest further modifications to the basic RTG design to improve its performance. {copyright} {ital 1999 American Institute of Physics.}

  17. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document ... Publication Date: 2014-07-08 OSTI Identifier: 1136695 Report ...

  18. Multiple hadron production by 14. 5 GeV electron and positron scattering from nuclear targets

    SciTech Connect (OSTI)

    Degtyarenko, P.V.; Button-Shafer, J.; Elouadrhiri, L.; Miskimen, R.A.; Peterson, G.A.; Wang, K. ); Gavrilov, V.B.; Kossov, M.V.; Leksin, G.A.; Shuvalov, S.M. ); Dietrich, F.S.; Melnikoff, S.O.; Molitoris, J.D.; Bibber, K.V. )

    1994-08-01

    Multiple proton and pion electroproduction from nuclei are studied. Final states including at least two protons produced by the interaction of 14.5 GeV electrons and positrons with light nuclei (mainly [sup 12]C and [sup 16]O) have been measured, and compared with analogous data from [sup 40]Ar. Scattered electrons and positrons were detected in the energy transfer range from 0.2 to 12.5 GeV, and four-momentum transfer squared range from 0.1 to 5.0 GeV[sup 2]/[ital c][sup 2]. Phenomenological characteristics of the secondary hadron production cross sections such as temperature and velocity of the effective source of hadrons were found to be dependent on energy transfer to the nucleus and independent on the four-momentum transfer squared at energy transfers greater than 2 GeV.

  19. Using 3D Printing to Redesign Santa's Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In the past, we've utilized GE technology to redesign Santa's Sleigh and have asked our additive manufacturing researchers to design and print 3D printed Christmas tree...

  20. Electronic and magnetic properties of Si substituted Fe3Ge

    SciTech Connect (OSTI)

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirm these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.

  1. Ge Interface Engineering with Ozone-oxidation for Low Interface State Density

    SciTech Connect (OSTI)

    Kuzum, Duygu; Krishnamohan, T.; Pethe, Abhijit J.; Okyay, Ali, K.; Oshima, Yasuhiro; Sun, Yun; McVittie, Jim P.; Pianetta, Piero A.; McIntyre, Paul C.; Saraswat, Krishna C.; /Stanford U., CIS

    2008-06-02

    Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone-oxidation to engineer Ge/insulator interface. Interface states (D{sub it}) values across the bandgap and close to conduction bandedge were extracted using conductance technique at low temperatures. D{sub it} dependency on growth conditions was studied. Minimum D{sub it} of 3 x 10{sup 11} cm{sup -2} V{sup -1} was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D{sub it} is strongly affected by the distribution of oxidation states and quality of the suboxide.

  2. HASL-258 IN SITU Ge(Li) AND Nal(T1) GAMMA-RAY SPECTROMETRY

    Office of Scientific and Technical Information (OSTI)

    HASL-258 IN SITU Ge(Li) AND Nal(T1) GAMMA-RAY SPECTROMETRY September 1972 Health and Safety Laboratory (AEC) New York, New York DISCLAIMER This report was prepared as an account of ...

  3. Ultrafast terahertz-induced response of GeSbTe phase-change materials...

    Office of Scientific and Technical Information (OSTI)

    Title: Ultrafast terahertz-induced response of GeSbTe phase-change materials The time-reso... pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. ...

  4. Physics Opportunities with the 12 GeV Upgrade at Jefferson Lab...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Program Document: Physics Opportunities with the 12 GeV Upgrade at Jefferson Lab Citation Details In-Document Search Title: Physics Opportunities ...

  5. Project planning workshop 6-GeV synchrotron light source: Volume 2

    SciTech Connect (OSTI)

    Not Available

    1986-01-01

    A series of work sheets, graphs, and printouts are given which detail the work breakdown structure, cost, and manpower requirements for the 6 GeV Synchrotron Light Source. (LEW)

  6. Black GE based on crystalline/amorphous core/shell nanoneedle arrays

    DOE Patents [OSTI]

    Javey, Ali; Chueh, Yu-Lun; Fan, Zhiyong

    2014-03-04

    Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

  7. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113...

    Office of Scientific and Technical Information (OSTI)

    of cluster glass in the Tb117Fe52Ge113.8(1) system. The heat capacity data exhibit no evidence for long-range magnetic order, and yield a large value of Sommerfeld coefficient. ...

  8. Early diagenesis of germanium in sediments of the Antarctic South Atlantic: In search of the missing Ge sink

    SciTech Connect (OSTI)

    King, S.L.; Froelich, P.N.; Jahnke, R.A.

    2000-04-01

    Pore water and solid-phase geochemistry profiles were obtained from several cores between 41{degree}S and 53{degree}S in the Atlantic sector of the Southern Ocean. Pore water nitrate, manganese, and iron profiles delineate standard redox zones in these sediments, and help characterize those with classic vs. burn-down behaviors. Pore water Si and Ge profiles demonstrate that Ge released during opal dissolution is removed pervasively throughout the uppermost interval of silicate release, and also downwards into the suboxic zone by as yet unidentified precipitation mechanisms. These results indicate that early diagenesis of Ge is uncoupled from that of opal. Solid-phase extractions (Fe, Mn, U, Mo, Ge, Cu, Ni, Co, V, and Cd) in a few cores suggest that anthigenic Ge removal in the suboxic zone is not associated with peaks in authigenic Mn cycling (MnO{sub 2} and related metals) but rather with processes deeper in the sediments, perhaps Fe or U diagenesis. Below the interval of Ge removal, pre water Ge increases linearly with depth by over two orders of magnitude, indicating a deep (below recovery) source of large magnitude. The fraction of opal-derived Ge precipitated authigenically in these sediments ranges from {approximately}1 to 96% and correlates strongly with the detrital fraction as well as the detrital to opal ratio, both of which generally decrease from north to south. The Ge sink observed in these sediments would need to be globally representative to account for the entire missing Ge sink in today's oceanic Ge balance, which seems unlikely. Benthic fluxes of Ge and Si estimated from these pore water profiles and from measurements in three benthic flux chamber experiments at high carbon-rain continental margin sites demonstrate that the Ge/Si rate released from the seafloor in locations with high benthic silicate and carbon fluxes is congruent with Holocene opal dissolution (Ge/Si {approximately} 0.7 x 10{sup {minus}6}). In contrast, Ge/Si flux ratios in areas with low silicate fluxes are Ge-depleted (Ge/Si < 0.5 x 10{sup {minus}6}). The authors speculate that glacial-interglacial changes in oceanic Ge/Si as recorded in diatoms may be due in part to variations in this authigenic Ge sink, perhaps related to shifts in siliceous productivity from open ocean (Antarctic) siliceous oozes during interglacials to areas of higher detrital input (Sub Antarctic, continental margins) and possibly also to generally more reducing conditions in sediments during glacials.

  9. Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

    SciTech Connect (OSTI)

    Ziouche, K. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Bougrioua, Z. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Lejeune, P.; Lasri, T.; Leclercq, D.; Savelli, G.; Hauser, D.; Michon, P.-M.

    2014-07-28

    This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (?SIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of ?SIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in ?SIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.

  10. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

    SciTech Connect (OSTI)

    Taoka, Noriyuki Fukudome, Motoshi; Takeuchi, Wakana; Arahira, Takamitsu; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2014-05-07

    The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200?C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500?C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33?eV from the conduction band minimum and 0.55?eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500?C was observed. The effect of H{sub 2} annealing at around 200?C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

  11. Electronic correlation and magnetism in the ferromagnetic metal Fe 3 GeTe 2

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Electronic correlation and magnetism in the ferromagnetic metal Fe 3 GeTe 2 Citation Details In-Document Search This content will become publicly available on April 5, 2017 Title: Electronic correlation and magnetism in the ferromagnetic metal Fe 3 GeTe 2 Authors: Zhu, Jian-Xin ; Janoschek, Marc ; Chaves, D. S. ; Cezar, J. C. ; Durakiewicz, Tomasz ; Ronning, Filip ; Sassa, Yasmine ; Mansson, Martin ; Scott, B. L. ; Wakeham, N. ; Bauer, Eric D. ; Thompson,

  12. GeSi strained nanostructure self-assembly for nano- and opto-electronics.

    Office of Scientific and Technical Information (OSTI)

    (Technical Report) | SciTech Connect GeSi strained nanostructure self-assembly for nano- and opto-electronics. Citation Details In-Document Search Title: GeSi strained nanostructure self-assembly for nano- and opto-electronics. Strain-induced self-assembly during semiconductor heteroepitaxy offers a promising approach to produce quantum nanostructures for nanologic and optoelectronics applications. Our current research direction aims to move beyond self-assembly of the basic quantum dot

  13. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Citation Details In-Document Search Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Authors: Kono, Yoshio ; Kenney-Benson, Curtis ; Ikuta, Daijo ; Shibazaki, Yuki ; Wang, Yanbin ; Shen, Guoyin Publication Date: 2016-03-14 OSTI Identifier: 1249225 Resource Type: Journal Article Resource Relation: Journal Name: Proceedings of the National

  14. Strangelet search in S-W collisions at 200[ital A] GeV/[ital c

    SciTech Connect (OSTI)

    Borer, K.; Dittus, F.; Frei, D.; Hugentobler, E.; Klingenberg, R.; Moser, U.; Pretzl, K.; Schacher, J.; Stoffel, F.; Volken, W. ); Elsener, K.; Lohmann, K.D. ); Baglin, C.; Bussiere, A.; Guillaud, J.P. ); Appelquist, G.; Bohm, C.; Hovander, B.; Sellden, B.; Zhang, Q.P. )

    1994-03-07

    A search for new massive particles with a low charge to mass ratio in S-W collisions at a beam momentum of 200 GeV/[ital c] per nucleon is presented. Upper limits for the production of strangelets with a mass to charge ratio of up to 60 GeV/[ital c][sup 2] at rigidities of [plus minus]150 GV are reported.

  15. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI Identifier: 1136695 Report

  16. 1.3??m photoluminescence of Ge/GaAs multi-quantum-well structure

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A. Kudryavtsev, K. E.; Rumyantsev, V. V.; Tonkikh, A. A.; Zakharov, N. D.; Zvonkov, B. N.

    2014-01-28

    In this paper, we report on photoluminescence studies of a multiple quantum well Ge/GaAs heterostructure grown by laser-assisted sputtering. A broad luminescence peak is found at about 1.3??m at room temperature. We attribute this peak to the direct band gap transitions between ?-valley electrons in the GaAs matrix and valence band heavy holes in Ge quantum wells.

  17. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  18. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    SciTech Connect (OSTI)

    Velea, A.; Borca, C. N.; Grolimund, D.; Socol, G.; Galca, A. C.; Popescu, M.; Bokhoven, J. A. van

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  19. Microstructure study of the rare-earth intermetallic compounds R5(SixGe1-x)4 and R5(SixGe1-x)3

    SciTech Connect (OSTI)

    Cao, Qing

    2012-07-26

    The unique combination of magnetic properties and structural transitions exhibited by many members of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family (R = rare earths, 0 ≤ x ≤ 1) presents numerous opportunities for these materials in advanced energy transformation applications. Past research has proven that the crystal structure and magnetic ordering of the R{sub 5(Si{sub x}Ge{sub 1-x}){sub 4} compounds can be altered by temperature, magnetic field, pressure and the Si/Ge ratio. Results of this thesis study on the crystal structure of the Er{sub 5}Si{sub 4} compound have for the first time shown that the application of mechanical forces (i.e. shear stress introduced during the mechanical grinding) can also result in a structural transition from Gd{sub 5}Si{sub 4}-type orthorhombic to Gd{sub 5}Si{sub 2}Ge{sub 2}-type monoclinic. This structural transition is reversible, moving in the opposite direction when the material is subjected to low-temperature annealing at 500 ˚C. Successful future utilization of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family in novel devices depends on a fundamental understanding of the structure-property interplay on the nanoscale level, which makes a complete understanding of the microstructure of this family especially important. Past scanning electron microscopy (SEM) observation has shown that nanometer-thin plates exist in every R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} (“5:4”) phase studied, independent of initial parent crystal structure and composition. A comprehensive electron microscopy study including SEM, energy dispersive spectroscopy (EDS), selected area diffraction (SAD), and high resolution transmission electron microscopy (HRTEM) of a selected complex 5:4 compound based on Er rather than Gd, (Er{sub 0.9Lu{sub 0.1}){sub 5}Si{sub 4}, has produced data supporting the assumption that all the platelet-like features present in the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family are hexagonal R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 3} (“5:3”) phase and possess the same reported orientation relationship that exists for the Gd{sub 5}Ge{sub 4} and Gd{sub 5}Si{sub 2}Ge{sub 2} compounds, i.e. [010](102̅){sub m} || [101̅0](12̅11){sub p}. Additionally, the phase identification in (Er{sub 0.9}Lu{sub 0.1}){sub 5}Si{sub 4} carried out using X-ray powder diffraction (XRD) techniques revealed that the low amount of 5:3 phase is undetectable in a conventional laboratory Cu Kα diffractometer due to detection limitations, but that extremely low amounts of the 5:3 phase can be detected using high resolution powder diffraction (HRPD) employing a synchrotron source. These results suggest that use of synchrotron radiation for the study of R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds should be favored over conventional XRD for future investigations. The phase stability of the thin 5:3 plates in a Gd{sub 5}Ge{sub 4} sample was examined by performing long-term annealing at very high temperature. The experimental results indicate the plates are thermally unstable above 1200˚C. While phase transformation of 5:3 to 5:4 occurs during the annealing, the phase transition is still fairly sluggish, being incomplete even after 24 hours annealing at this elevated temperature. Additional experiments using laser surface melting performed on the surface of a Ho{sub 5}(Si{sub 0.8}Ge{sub 0.}2){sub 4} sample showed that rapid cooling will suppress the precipitation of 5:3 plates. Bulk microstructure studies of polycrystalline and monocrystalline Gd{sub 5}Ge{sub 3} compounds examined using optical microscopy, SEM and TEM also show a series of linear features present in the Gd{sub 5}Ge{sub 3} matrix, similar in appearance in many ways to the 5:3 plates observed in R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds. A systematic microscopy analysis of these linear features revealed they also are thin plates with a stoichiometric composition of Gd{sub 5}Ge{sub 4} with an orthorhombic structure. The orientation relationship between the 5:3 matrix and the precipitate 5:4 thin plates was determined as [101̅0] (12̅11){sub m} || [010] (102̅){sub p} .

  20. The First-cycle Electrochemical Lithiation of Crystalline Ge Dopant and Orientation Dependence, and Comparison with Si

    SciTech Connect (OSTI)

    Chan, Maria K.Y.; Long, Brandon R.; Gewirth, Andrew A.; Greeley, Jeffrey P.

    2011-12-15

    We use first principles Density Functional Theory (DFT), cyclic voltammetry (CV), and Raman spectroscopy to investigate the first-cycle electrochemical lithiation of Ge in comparison with Si both high-capacity anode materials for Li ion batteries. DFT shows a significant difference in the dilute solubility of Li in Si and Ge, despite similarities in their chemical and physical properties. We attribute this difference to electronic, as opposed to elastic, effects. CV and Raman data reveal little dopant dependence in the lithiation onset voltages in Ge, unlike in Si, due to a smaller energy difference between dilute Li insertion in p-type Ge and bulk germanide formation than the corresponding difference in Si. Finally, we show that there is no orientation dependence in lithiation onset voltages in Ge. We conclude that approaches other than microstructuring are needed to fabricate effective electrodes able to take advantage of the higher rate capability of Ge compared to that of Si.

  1. Electrical properties of diluted n- and p-Si{sub 1?x}Ge{sub x} at small x

    SciTech Connect (OSTI)

    Emtsev, V. V., E-mail: emtsev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Abrosimov, N. V. [Leibniz Institute for Crystal Growth (Germany); Kozlovskii, V. V. [St. Petersburg Polytechnical State University (Russian Federation); Oganesyan, G. A. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2014-12-15

    Hall effect and conductivity measurements are taken on Si{sub 1?x}Ge{sub x} of n- and p-type at x ? 0.05. Much attention is given to electrical measurements over a temperature interval of 25 to 40 K where the mobility of charged carriers is strongly affected by alloy scattering. The partial mobility of electrons and holes due to this scattering mechanism is estimated for n-Si{sub 1?x}Ge{sub x} and p-Si{sub 1?x}Ge{sub x} at small x. Together with this, an effect of the presence of Ge atoms upon the ionization energy of phosphorus and boron impurities is investigated. Some points related to an inhomogeneous distribution of Ge atoms in Si{sub 1?x}Ge{sub x} are discussed.

  2. DEGREE-SCALE GeV 'JETS' FROM ACTIVE AND DEAD TeV BLAZARS

    SciTech Connect (OSTI)

    Neronov, A.; Semikoz, D.; Kachelriess, M.; Ostapchenko, S.; Elyiv, A.

    2010-08-20

    We show that images of TeV blazars in the GeV energy band should contain, along with point-like sources, degree-scale jet-like extensions. These GeV extensions are the result of electromagnetic cascades initiated by TeV {gamma}-rays interacting with extragalactic background light and the deflection of the cascade electrons/positrons in extragalactic magnetic fields (EGMFs). Using Monte Carlo simulations, we study the spectral and timing properties of the degree-scale extensions in simulated GeV band images of TeV blazars. We show that the brightness profile of such degree-scale extensions can be used to infer the light curve of the primary TeV {gamma}-ray source over the past 10{sup 7} yr, i.e., over a time scale comparable to the lifetime of the parent active galactic nucleus. This implies that the degree-scale jet-like GeV emission could be detected not only near known active TeV blazars, but also from 'TeV blazar remnants', whose central engines were switched off up to 10 million years ago. Since the brightness profile of the GeV 'jets' depends on the strength and the structure of the EGMF, their observation provides additional information about the EGMF.

  3. Electronic structural and magnetic properties of Mn{sub 5}Ge{sub 3} clusters

    SciTech Connect (OSTI)

    Yuan, H. K.; Chen, H. Kuang, A. L.; Tian, C. L.; Wang, J. Z.

    2013-11-28

    Theoretical understanding of the stability, ferromagnetism, and spin polarization of Mn{sub 5}Ge{sub 3} clusters has been performed by using the density functional theory with generalized gradient approximation for exchange and correlation. The magnetic moments and magnetic anisotropy energy (MAE) have been calculated for both bulk and clusters, and the enhanced magnetic moment as well as the enlarged MAE have been identified in clusters. The most attractive achievement is that Mn{sub 5}Ge{sub 3} clusters show a fine half-metallic character with large energy scales. The present results may have important implications for potential applications of small Mn{sub 5}Ge{sub 3} clusters as both emerging spintronics and next-generation data-storage technologies.

  4. Si/SiGe electron resonant tunneling diodes with graded spacer wells

    SciTech Connect (OSTI)

    Paul, D. J.; See, P.; Bates, R.; Griffin, N.; Coonan, B. P.; Redmond, G.; Crean, G. M.; Zozoulenko, I. V.; Berggren, K.-F.; Hollander, B.

    2001-06-25

    Resonant tunneling diodes have been fabricated using graded Si{sub 1{minus}x}Ge{sub x} (x=0.3{r_arrow}0.0) spacer wells and strained Si{sub 0.4}Ge{sub 0.6} barriers on a relaxed Si{sub 0.7}Ge{sub 0.3} n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08A/cm{sup 2} with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. {copyright} 2001 American Institute of Physics.

  5. GE 超微型开关技术展示高性能

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    满足新一代4G移动设备的要求 | GE Global Research GE 超微型开关技术展示高性能 满足新一代4G移动设备的要求 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE 超微型开关技术展示高性能 满足新一代4G移动设备的要求

  6. Highly bent (110) Ge crystals for efficient steering of ultrarelativistic beams

    SciTech Connect (OSTI)

    De Salvador, D.; Maggioni, G.; Carturan, S.; Bazzan, M.; Argiolas, N.; Carnera, A.; Dalla Palma, M.; Della Mea, G.; Bagli, E.; Mazzolari, A.; Bandiera, L.; Guidi, V.; Lietti, D.; Berra, A.; Guffanti, G.; Prest, M.; Vallazza, E.

    2013-10-21

    Thanks to the effective electrostatic potential generated by the ordered atomic structure, bent crystals can efficiently deflect ultra relativistic charged beams by means of planar and axial channeling phenomena as well as of the recently discovered volume reflection effect. Most of the experimental knowledge about these phenomena has been gathered with Si crystals, but it has been recently demonstrated that the steering performance can be improved by using high quality Ge materials which have a larger atomic number. In this paper, we investigate channeling and volume reflection of 400 GeV protons from (110) lattice planes in highly bent Ge strips crystals. Both production and characterization of the strips are presented. Herein, the experimental results on deflection are compared with theoretical predictions, with previous published data and with the expected performances of Si crystals in similar experimental conditions.

  7. Natural SM-like 126 GeV Higgs boson via nondecoupling D terms

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bertuzzo, Enrico; Frugiuele, Claudia

    2016-02-16

    Accommodating both a 126 GeV mass and standard model (SM)-like couplings for the Higgs has a fine-tuning price in supersymmetric models. Examples are the minimal supersymmetric standard model, in which SM-like couplings are natural, but raising the Higgs mass to 126 GeV requires a considerable tuning, and the nonminimal supersymmetric standard model, in which the situation is reversed: the Higgs is naturally heavier, but being SM-like requires some tuning. Finally, we show that models with nondecoupling D terms alleviate this tension—a 126 GeV SM-like Higgs comes out basically with no fine-tuning cost. In addition, the analysis of the fine-tuning of the extended gaugemore » sector shows that naturalness requires the heavy gauge bosons to likely be within the reach of LHC run II.« less

  8. Pd-vacancy complex in Ge: TDPAC and ab initio study

    SciTech Connect (OSTI)

    Abiona, Adurafimihan A.; Kemp, Williams; Timmers, Heiko

    2014-02-21

    Low temperature metal-induced-crystallized germanium is a promising alternative for silicon in Complementary Metal-Oxide-Semiconductor (CMOS) technology. Palladium (Pd) is one of the metals suitable for inducing the low temperature crystallization. It is not certain, how residual Pd atoms are integrated into the Ge lattice. Therefore, time-different ?-? perturbed angular correlation (TDPAC) technique using the {sup 100}Pd(?{sup 100}Rh) nuclear probe has been applied to study the hyperfine interactions of this probe in single crystalline undoped Ge. A Pd-vacancy (Pd-V) complex with a unique interaction frequency of 8.4(2) Mrad/s has been identified. The Pd-V complex has been measured to have a maximum fraction after annealing at 350 C. Density functional theory calculations have confirmed that the Pd-V complex may have the split-vacancy configuration in Ge, in contrast to the full-vacancy configuration observed in Si.

  9. Photoemission Study of the Rare Earth Intermetallic Compounds: RNi2Ge2 (R=Eu, Gd)

    SciTech Connect (OSTI)

    Jongik Park

    2004-12-19

    EuNi{sub 2}Ge{sub 2} and GdNi{sub 2}Ge{sub 2} are two members of the RT{sub 2}X{sub 2} (R = rare earth, T = transition metal and X = Si, Ge) family of intermetallic compounds, which has been studied since the early 1980s. These ternary rare-earth intermetallic compounds with the tetragonal ThCr{sub 2}Si{sub 2} structure are known for their wide variety of magnetic properties, Extensive studies of the RT{sub 2}X{sub 2} series can be found in Refs [ 1,2,3]. The magnetic properties of the rare-earth nickel germanides RNi{sub 2}Ge{sub 2} were recently studied in more detail [4]. The purpose of this dissertation is to investigate the electronic structure (both valence band and shallow core levels) of single crystals of EuNi{sub 2}Ge{sub 2} and GdNi{sub 2}Ge{sub 2} and to check the assumptions that the f electrons are non-interacting and, consequently, the rigid-band model for these crystals would work [11], using synchrotron radiation because, to the best of our knowledge, no photoemission measurements on those have been reported. Photoemission spectroscopy has been widely used to study the detailed electronic structure of metals and alloys, and especially angle-resolved photoemission spectroscopy (ARPES) has proven to be a powerful technique for investigating Fermi surfaces (FSs) of single-crystal compounds.

  10. Jefferson Lab Awards $3.54 Million Contract To Pennsylvania Firm for 12 GeV

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Project | Jefferson Lab 3.54 Million Contract To Pennsylvania Firm for 12 GeV Project Jefferson Lab Awards $3.54 Million Contract To Pennsylvania Firm for 12 GeV Project NEWPORT NEWS, Va., May 1, 2009 - A Pennsylvania company has been awarded a $3.54 million contract to provide 84 klystrons to the U.S. Department of Energy's Thomas Jefferson National Accelerator Facility. The 13 kW klystrons, devices which will generate the electromagnetic fields that will accelerate the CEBAF electron

  11. Native point defects and doping in ZnGeN 2 (Journal Article) | DOE PAGES

    Office of Scientific and Technical Information (OSTI)

    Native point defects and doping in ZnGeN 2 This content will become publicly available on April 11, 2017 « Prev Next » Title: Native point defects and doping in ZnGeN 2 Authors: Skachkov, Dmitry ; Punya Jaroenjittichai, Atchara ; Huang, Ling-yi ; Lambrecht, Walter R. L. Publication Date: 2016-04-11 OSTI Identifier: 1246761 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal Information: Journal Volume: 93; Journal Issue: 15; Journal ID: ISSN 2469-9950

  12. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and

  13. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Citation Details In-Document Search This content will become publicly available on September 29, 2016 Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Authors: Kono, Yoshio ; Kenney-Benson, Curtis ; Ikuta, Daijo ; Shibazaki, Yuki ; Wang, Yanbin ; Shen, Guoyin Publication Date: 2016-03-14 OSTI

  14. New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    | Department of Energy GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Deputy Director, Solar Energy Technologies Office Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will

  15. Method for preparing high transition temperature Nb/sub 3/Ge superconductors. [Patent application

    DOE Patents [OSTI]

    Newkirk, L.R.; Valencia, F.A.

    1975-06-26

    Bulk coatings of Nb/sub 3/Ge superconductors having transition temperatures in excess of 20/sup 0/K are readily formed by a chemical vapor deposition technique involving the coreduction of NbCl/sub 5/ and GeCl/sub 4/ in the presence of hydrogen. The NbCl/sub 5/ vapor may advantageously be formed quantitatively in the temperature range of about 250 to 260/sup 0/C by the chlorination of Nb metal provided the partial pressure of the product NbCl/sub 5/ vapor is maintained at or below about 0.1 atm.

  16. Method for preparing high transition temperature Nb.sub.3 Ge superconductors

    DOE Patents [OSTI]

    Newkirk, Lawrence R.; Valencia, Flavio A.

    1977-01-01

    Bulk coatings of Nb.sub.3 Ge superconductors having transition temperatures in excess of 20 K are readily formed by a chemical vapor deposition technique involving the coreduction of NbCl.sub.5 and GeCl.sub.4 in the presence of hydrogen. The NbCl.sub.5 vapor may advantageously be formed quantitatively in the temperature range of about 250.degree. to 260.degree. C by the chlorination of Nb metal provided the partial pressure of the product NbCl.sub.5 vapor is maintained at or below about 0.1 atm.

  17. Ru{sub 2}Ge{sub 3}: Crystal growth and some properties

    SciTech Connect (OSTI)

    Borshchevsky, A.; Fleurial, J.P.

    1993-10-01

    Large samples of Ru{sub 2}Ge{sub 3} were grown from Ge-rich off-stoichiometric melts at a temperature close to 1,460 C by a vertical gradient freeze method in graphite and glassy carbon crucibles. Diffusionless transition from high temperature tetragonal structure to low temperature orthorhombic structure causes twinning and crack formation. Thermal expansion coefficients of both low and high temperature phases were measured. Some electrical transport properties in the 25--1,000 C temperature range in different crystallographic directions are also described for this high temperature semiconductor. Substantial anisotropy is observed.

  18. Straw man 900-1000 GeV crystal extraction test beam for Fermilab collider operation

    SciTech Connect (OSTI)

    Carrigan, R.A. Jr.

    1996-10-01

    A design for a 900-1000 GeV, 100 khz parasitic test beam for use during collider operations has been developed. The beam makes use of two bent crystals, one for extraction and the other one for redirecting the beam in to the present Switchyard beam system. The beam requires only a few modifications in the A0 area and largely uses existing devices. It should be straight-forward to modify one or two beam lines in the fixed target experimental areas to work above 800 GeV. Possibilities for improvements to the design,to operate at higher fluxes are discussed.

  19. ON THE ENERGY SPECTRA OF GeV/TeV COSMIC RAY LEPTONS (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect ON THE ENERGY SPECTRA OF GeV/TeV COSMIC RAY LEPTONS Citation Details In-Document Search Title: ON THE ENERGY SPECTRA OF GeV/TeV COSMIC RAY LEPTONS Recent observations of cosmic ray (CR) electrons from several instruments have revealed various degrees of deviation in the measured electron energy distribution from a simple power law, in the form of an excess around 0.1-1 TeV energies. An even more prominent deviation and excess has been observed in the fraction of CR positrons

  20. On the Energy Spectra of GeV/TeV Cosmic Ray Leptons (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect On the Energy Spectra of GeV/TeV Cosmic Ray Leptons Citation Details In-Document Search Title: On the Energy Spectra of GeV/TeV Cosmic Ray Leptons Recent observations of cosmic ray electrons from several instruments have revealed various degrees of deviation in the measured electron energy distribution from a simple power-law, in a form of an excess around 0.1 to 1 TeV energies. An even more prominent deviation and excess has been observed in the fraction of cosmic ray

  1. GE China Technology Center Wins Top 12 Most Innovative Practices Award of

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    "Multinational Companies in Shanghai" | GE Global Research China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational Companies in Shanghai" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE China Technology Center Wins Top 12 Most Innovative Practices Award of

  2. Native point defects and doping in ZnGeN 2 (Journal Article) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect SciTech Connect Search Results Journal Article: Native point defects and doping in ZnGeN 2 Citation Details In-Document Search This content will become publicly available on April 11, 2017 Title: Native point defects and doping in ZnGeN 2 Authors: Skachkov, Dmitry ; Punya Jaroenjittichai, Atchara ; Huang, Ling-yi ; Lambrecht, Walter R. L. Publication Date: 2016-04-11 OSTI Identifier: 1246761 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal

  3. Kinetics of visible light photo-oxidation of Ge nanocrystals:Theory and in situ measurement

    SciTech Connect (OSTI)

    Sharp, I.D.; Xu, Q.; Yuan, C.W.; Beeman, J.W.; Ager III, J.W.; Chrzan, D.C.; Haller, E.E.

    2006-11-14

    Photo-oxidation of Ge nanocrystals illuminated with visible laser light under ambient conditions was investigated. The photo-oxidation kinetics were monitored by in situ measurement of the crystalline Ge volume fraction by Raman spectroscopy. The effects of laser power and energy on the extent of oxidation were measured using both in situ and ex situ Raman scattering techniques. A mechanistic model in which the tunneling of photo-excited carriers to the oxide surface for electron activated molecular oxygen dissociation is proposed. This quantitative model successfully describes all experimental photo-oxidation observations using physical parameters.

  4. €18.5 Million in New Research Program Funding Announced, GE and TUM

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    €18.5 Million in New Research Program Funding Announced as GE Marks the 10th Anniversary of its Global Research Center in Europe Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) €18.5 Million in New Research Program Funding Announced as GE Marks the 10th Anniversary of its Global Research Center in Europe New

  5. "Big Picture" Process Modeling Tools |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Using process modeling tools to attain cost-effective results for GE customers Jimmy Lopez 2015.03.26 Sometimes, we need to look outside the box to realize the powerful tools we have inside.

  6. Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

    SciTech Connect (OSTI)

    Chen, Xi; Salta, Daniel; Zhang, Libin [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Zhou, Jianshi; Goodenough, John B.; Shi, Li [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2013-11-07

    Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8??10{sup 21} and 2.2??10{sup 21}?cm{sup ?3} measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} with y?=?0.035 varies approximately as T{sup ?3/2} above 200?K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823?K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} samples with high Ge concentration of y?=?0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823?K and accounts for about 12% of the total thermal conductivity at about 800?K.

  7. Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon

    SciTech Connect (OSTI)

    Hrauda, N.; Zhang, J. J.; Groiss, H.; Etzelstorfer, T.; Stangl, J.; Bauer, G.; Gerharz, J. C.; Holy, V.; Deiter, C.; Seeck, O. H.

    2013-01-21

    We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 Degree-Sign C with average Ge contents of 30%, the Si cap layer is misfit- and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands.

  8. Process for preparing high-transition-temperature superconductors in the Nb-Al-Ge system

    DOE Patents [OSTI]

    Giorgi, A.L.; Szklarz, E.G.

    1973-01-30

    The patent describes a process for preparing superconducting materials in the Nb-Al-Ge system having transition temperatures in excess of 19K. The process comprises premixing powdered constituents, pressing them into a plug, heating the plug to 1,450-1,800C for 30 minutes to an hour under vacuum or an inert atmosphere, and annealing at moderate temperatures for reasonably long times (approximately 50 hours). High transition-temperature superconductors, including those in the Nb3(Al,Ge) system, prepared in accordance with this process exhibit little degradation in the superconducting transition temperature on being ground to -200 mesh powder. (GRA)

  9. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | DOE PAGES Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 This content will become publicly available on September 29, 2016 Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Authors: Kono, Yoshio ; Kenney-Benson, Curtis ; Ikuta, Daijo ; Shibazaki, Yuki ; Wang, Yanbin ; Shen, Guoyin Publication Date: 2016-03-14 OSTI Identifier: 1241555 Grant/Contract Number: FG02-99ER45775; NA0001974 Type: Published Article

  10. Crystal structure and physical properties of quaternary clathrates Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}, Ba{sub 8}(Zn,Cu){sub x}Ge{sub 46-x} and Ba{sub 8}(Zn,Pd){sub x}Ge{sub 46-x}

    SciTech Connect (OSTI)

    Nasir, Navida; Grytsiv, Andriy; Melnychenko-Koblyuk, Nataliya; Rogl, Peter; Bednar, Ingeborg; Bauer, Ernst

    2010-10-15

    Three series of vacancy-free quaternary clathrates of type I, Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}, Ba{sub 8}(Zn,Cu){sub x}Ge{sub 46-x}, and Ba{sub 8}(Zn,Pd){sub x}Ge{sub 46-x}, have been prepared by reactions of elemental ingots in vacuum sealed quartz at 800 {sup o}C. In all cases cubic primitive symmetry (space group Pm3n, a{approx}1.1 nm) was confirmed for the clathrate phase by X-ray powder diffraction and X-ray single crystal analyses. The lattice parameters show a linear increase with increase in Ge for Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}. M atoms (Zn, Pd, Cu) preferably occupy the 6d site in random mixtures. No defects were observed for the 6d site. Site preference of Ge and Si in Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y} has been elucidated from X-ray refinement: Ge atoms linearly substitute Si in the 24k site whilst a significant deviation from linearity is observed for occupation of the 16i site. A connectivity scheme for the phase equilibria in the 'Ba{sub 8}Ge{sub 46}' corner at 800 {sup o}C has been derived and a three-dimensional isothermal section at 800 {sup o}C is presented for the Ba-Pd-Zn-Ge system. Studies of transport properties carried out for Ba{sub 8{l_brace}}Cu,Pd,Zn{r_brace}{sub x}Ge{sub 46-x} and Ba{sub 8}Zn{sub x}Si{sub y}Ge{sub 46-x-y} evidenced predominantly electrons as charge carriers and the closeness of the systems to a metal-to-insulator transition, fine-tuned by substitution and mechanical processing of starting material Ba{sub 8}Ge{sub 43}. A promising figure of merit, ZT {approx}0.45 at 750 K, has been derived for Ba{sub 8}Zn{sub 7.4}Ge{sub 19.8}Si{sub 18.8}, where pricey germanium is exchanged by reasonably cheap silicon. - Graphical abstract: Quaternary phase diagram of Ba-Pd-Zn-Ge system at 800 {sup o}C.

  11. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

    SciTech Connect (OSTI)

    Liu, Zhi; Li, Yaming; He, Chao; Li, Chuanbo; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen Wang, Qiming

    2014-05-12

    Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n{sup ?}-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N{sup +} region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge.

  12. Details and justifications for the MAP concept specification for acceleration above 63 GeV

    SciTech Connect (OSTI)

    Berg, J. Scott

    2014-02-28

    The Muon Accelerator Program (MAP) requires a concept specification for each of the accelerator systems. The Muon accelerators will bring the beam energy from a total energy of 63 GeV to the maximum energy that will fit on the Fermilab site. Justifications and supporting references are included, providing more detail than will appear in the concept specification itself.

  13. Barocaloric effect in the magnetocaloric prototype Gd5Si2Ge2

    SciTech Connect (OSTI)

    Yuce, Suheyla; Barrio, Maria; Emre, Baris; Stern-Taulats, Enric; Planes, Antoni; Tamarit, Josep-Lluis; Mudryk, Yaroslav; Gschneidner, Karl A.; Pecharsky, Vitalij K.; Manosa, Lluis

    2012-08-16

    We report on calorimetric measurements under hydrostatic pressure that enabled us to determine the barocaloric effect in Gd5Si2Ge2. The values for the entropy change for moderate pressures compare favourably to those corresponding to the magnetocaloric effect in this compound. Entropy data are complemented with direct measurements of the adiabatic pressure-induced temperature change.

  14. The Case for a 500 GeV e+e- Linear Collider

    SciTech Connect (OSTI)

    Baggers, J.; Baltay, C.; Barker, T.; Barklow, T.; Bauer, U.; Bolton, T.; Brau, J.; Breidenbach, M.; Burke, D.; Burrows, P.; Dixon, L.; Fisk, H.E.; Frey, R.; Gerdes, D.; Graf, D.; Grannis, P.; Haber, H.E.; Hearty, C.; Hertzbach, S.; Heusch, C.; Hewett, J.; Hollebeek, R.; Jacobsen, R.; Jaros, J.; Kamon, T.; Karlen, D.; Koltick, D.; Kronfeld, A.; Marciano, W.; Markiewicz, T.; Murayama, H.; Nauenberg, U.; Orr, L.; Paige, F.; Para, A.; Peskin, M. E.; Porter, F.; Riles, K.; Ronan, M.; Rosenberg, L.; Schumm, B.; Stroynowski, R.; Tkaczyk, S.; Turcot, A.S.; van Bibber, K.; van Kooten, R.; Wells, J.D.; Yamamoto, H.

    2000-07-05

    Several proposals are being developed around the world for an e+e- linear collider with an initial center of mass energy of 500 GeV. In this paper, we will discuss why a project of this type deserves priority as the next major initiative in high energy physics.

  15. Atomic and electronic structure of the ferroelectric BaTiO{sub 3}/Ge(001) interface

    SciTech Connect (OSTI)

    Fredrickson, Kurt D.; Ponath, Patrick; Posadas, Agham B.; Demkov, Alexander A.; McCartney, Martha R.; Smith, David J.; Aoki, Toshihiro

    2014-06-16

    In this study, we demonstrate the epitaxial growth of BaTiO{sub 3} on Ge(001) by molecular beam epitaxy using a thin Zintl template buffer layer. A combination of density functional theory, atomic-resolution electron microscopy and in situ photoemission spectroscopy is used to investigate the electronic properties and atomic structure of the BaTiO{sub 3}/Ge interface. Aberration-corrected scanning transmission electron micrographs reveal that the Ge(001) 2??1 surface reconstruction remains intact during the subsequent BaTiO{sub 3} growth, thereby enabling a choice to be made between several theoretically predicted interface structures. The measured valence band offset of 2.7?eV matches well with the theoretical value of 2.5?eV based on the model structure for an in-plane-polarized interface. The agreement between the calculated and measured band offsets, which are highly sensitive to the detailed atomic arrangement, indicates that the most likely BaTiO{sub 3}/Ge(001) interface structure has been identified.

  16. Magnetic structure at low temperatures in FeGe{sub 2}

    SciTech Connect (OSTI)

    Babu, P. D.; Mishra, P. K.; Dube, V.; Ravikumar, G.; Mishra, R.; Sastry, P. U.

    2014-04-24

    Magnetic phase of FeGe{sub 2} intermetallic is studied using low-temperature neutron diffraction and DC magnetization. Zero-magnetic-field neutron scattering data shows the presence of an antiferromagnetic phase in the low temperature range. We find the evidence of the presence of a ferromagnetic order overriding on the predominantly antiferromagnetic phase at low temperatures.

  17. Thermodynamic and transport properties of single crystalline RCo2Ge2 (R=Y, LaNd, SmTm)

    SciTech Connect (OSTI)

    Kong, Tai; Cunningham, Charles E.; Taufour, Valentin; Budko, Sergey L.; Buffon, Malinda L.C.; Lin, Xiao; Emmons, Heather; Canfield, Paul C.

    2014-05-01

    Single crystals of RCo2Ge2 (R=Y, LaNd, SmTm) were grown using a self-flux method and were characterized by room-temperature powder X-ray diffraction; anisotropic, temperature and field dependent magnetization; temperature and field dependent, in-plane resistivity; and specific heat measurements. In this series, the majority of the moment-bearing members order antiferromagnetically; YCo2Ge2 and LaCo2Ge2 are non-moment-bearing. Ce is trivalent in CeCo2Ge2 at high temperatures, and exhibits an enhanced electronic specific heat coefficient due to the Kondo effect at low temperatures. In addition, CeCo2Ge2 shows two low-temperature anomalies in temperature-dependent magnetization and specific heat measurements. Three members (R=TbHo) have multiple phase transitions above 1.8 K. Eu appears to be divalent with total angular momentum L =0. Both EuCo2Ge2 and GdCo2Ge2 manifest essentially isotropic paramagnetic properties consistent with J =S =7/2. Clear magnetic anisotropy for rare-earth members with finite L was observed, with ErCo2Ge2 and TmCo2Ge2 manifesting planar anisotropy and the rest members manifesting axial anisotropy. The experimentally estimated crystal electric field (CEF) parameters B 20 were calculated from the anisotropic paramagnetic ? ab and ? c values and follow a trend that agrees well with theoretical predictions. The ordering temperatures, TNTN, as well as the polycrystalline averaged paramagnetic CurieWeiss temperature, ?avg, for the heavy rare-earth members deviate from the de Gennes scaling, as the magnitude of both is the highest for Tb, which is sometimes seen for extremely axial systems. Except for SmCo2Ge2, metamagnetic transitions were observed at 1.8 K for all members that ordered antiferromagnetically.

  18. On the origin of GeV emission in gamma-ray bursts

    SciTech Connect (OSTI)

    Beloborodov, Andrei M.; Hascot, Romain; Vurm, Indrek, E-mail: amb@phys.columbia.edu [Physics Department and Columbia Astrophysics Laboratory, Columbia University, 538 West 120th Street, New York, NY 10027 (United States)

    2014-06-10

    The most common progenitors of gamma-ray bursts (GRBs) are massive stars with strong stellar winds. We show that the GRB blast wave in the wind should emit a bright GeV flash. It is produced by inverse-Compton cooling of the thermal plasma behind the forward shock. The main part of the flash is shaped by scattering of the prompt MeV radiation (emitted at smaller radii) which streams through the external blast wave. The inverse-Compton flash is bright due to the huge e {sup } enrichment of the external medium by the prompt radiation ahead of the blast wave. At late times, the blast wave switches to normal synchrotron-self-Compton cooling. The mechanism is demonstrated by a detailed transfer simulation. The observed prompt MeV radiation is taken as an input of the simulation; we use GRB 080916C as an example. The result reproduces the GeV flash observed by the Fermi telescope. It explains the delayed onset, the steep rise, the peak flux, the time of the peak, the long smooth decline, and the spectral slope of GeV emission. The wind density required to reproduce all these features is typical of Wolf-Rayet stars. Our simulation predicts strong TeV emission 1 minute after the burst trigger; then a cutoff in the observed high-energy spectrum is expected from absorption by extragalactic background light. In addition, a bright optical counterpart of the GeV flash is predicted for plausible values of the magnetic field; such a double (optical+GeV) flash has been observed in GRB 130427A.

  19. Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands

    SciTech Connect (OSTI)

    Yablonskiy, A. N. Baidakova, N. A. Novikov, A. V.; Lobanov, D. N.; Shaleev, M. V.

    2015-11-15

    The spectral and time characteristics of photoluminescence associated with the radiative recombination of charge carriers in SiGe/Si(001) multilayer structures with self-assembled Ge:Si islands are investigated. The time dependences of the photoluminescence of Ge:Si islands in a wide range of delay times after the pump pulse are considered at various optical-excitation levels. The photoluminescence-excitation spectra from Ge(Si) islands in the SiGe/Si(001) structures are investigated in the region of band-to-band and subband optical pumping corresponding to various time components in the photoluminescence-relaxation kinetics. A significant difference in the shape of the excitation spectra is revealed for fast (0–100 μs) and slow (100 μs–50 ms) components of the photoluminescence signal from the islands. The significant dependence of the photoluminescence-excitation spectra of Ge(Si)/Si(001) islands on the optical-pump power is shown to be associated with the prolonged diffusion of nonequilibrium charge carriers from bulk-silicon layers to Ge:Si islands at high excitation levels.

  20. Bulk and surface half-metallicity: The case of D0{sub 3}-type Mn{sub 3}Ge

    SciTech Connect (OSTI)

    Liu, Hao; Gao, G. Y. Hu, Lei; Ni, Yun; Zu, Fengxia; Zhu, Sicong; Wang, Shuling; Yao, K. L.

    2014-01-21

    Motivated by the experimental realization of D0{sub 22}-type Mn{sub 3}Ge (001) films [Kurt et al. Appl. Phys. Lett. 101, 132410 (2012)] and the structural stability of D0{sub 3}-type Heusler alloy Mn{sub 3}Ge [Zhang et al. J. Phys.: Condens. Matter 25, 206006 (2013)], we use the first-principles calculations based on the full potential linearized augmented plane-wave method to investigate the electronic and magnetic properties of D0{sub 3}-type Heusler alloy Mn{sub 3}Ge and its (001) surface. We show that bulk D0{sub 3}-Mn{sub 3}Ge is a half-metallic ferromagnet with the minority-spin energy gap of 0.52 eV and the magnetic moment of 1.00 μ{sub B} per formula unit. The bulk half-metallicity is preserved at the pure Mn-terminated (001) surface due to the large exchange split, but the MnGe-terminated (001) surface destroys the bulk half-metallicity. We also reveal that the surface stabilities are comparable between the D0{sub 3}-Mn{sub 3}Ge (001) and the experimental D0{sub 22}-Mn{sub 3}Ge (001), which indicates the feasibility to grow the Mn{sub 3}Ge (001) films with D0{sub 3} phase other than D0{sub 22} one. The surface half-metallicity and stability make D0{sub 3}-Mn{sub 3}Ge a promising candidate for spintronic applications.

  1. Direct Evidence for Abrupt Postcrystallization Germanium Precipitation in Thin Phase-Change Films of Sb-15 at. % Ge

    SciTech Connect (OSTI)

    Cabral,C.; Krusin-Elbaum, L.; Bruley, J.; Raoux, S.; Deline, V.; Madan, A.; Pinto, T.

    2008-01-01

    We present evidence for the instability in the crystalline (metallic) state of binary Te-free phase-change Ge-Sb thin films considered for integration into nonvolatile nanosized memory cells. We find that while the amorphous (semiconducting) phase of eutectic Sb-15 at. % Ge is very robust until Sb crystallization at 240 C, at about 350 C, germanium rapidly precipitates out. Ge precipitation, visualized directly with transmission electron microscopy, is exothermic and is found to affect the films' reflectivity, resistance, and stress. It converts melting into a two-step process, which may seriously impact the switching reliability of a device.

  2. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1)

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) Citation Details In-Document Search Title: Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) In this paper we demonstrate evidence of a cluster spin glass in Tb117Fe52Ge113.8(1) (a compound with a giant cubic unit cell) via ac and dc magnetic susceptibility, magnetization, magnetic relaxation and heat capacity measurements. The results clearly show that

  3. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1)

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) Citation Details In-Document Search Title: Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) In this paper we demonstrate evidence of a cluster spin glass in Tb117Fe52Ge113.8(1) (a compound with a giant cubic unit cell) via ac and dc magnetic susceptibility, magnetization, magnetic relaxation and heat capacity measurements. The results clearly show

  4. Phase equilibria in the La–Mg–Ge system at 500 °C and crystal structure of the new ternary compounds La{sub 11}Mg{sub 2}Ge{sub 7} and LaMg{sub 3−x}Ge{sub 2}

    SciTech Connect (OSTI)

    De Negri, S.; Solokha, P.; Skrobańska, M.; Proserpio, D.M.; Saccone, A.

    2014-10-15

    The whole 500 °C isothermal section of the La–Mg–Ge ternary system was constructed. The existence and crystal structure of three ternary compounds were confirmed: La{sub 2+x}Mg{sub 1−x}Ge{sub 2} (τ{sub 2}, P4/mbm, tP10–Mo{sub 2}FeB{sub 2}, 0≤x≤0.25), La{sub 4}Mg{sub 5}Ge{sub 6} (τ{sub 3}, Cmc2{sub 1}, oS60–Gd{sub 4}Zn{sub 5}Ge{sub 6}) and La{sub 4}Mg{sub 7}Ge{sub 6} (τ{sub 4}, C2/m, mS34, own structure type). Five novel compounds were identified and structurally characterized: La{sub 11}Mg{sub 2}Ge{sub 7} (τ{sub 1}, P4{sub 2}/ncm, tP88-8, own structure type, a=1.21338(5), c=1.57802(6) nm), LaMg{sub 3−x}Ge{sub 2} (τ{sub 5}, P3{sup ¯}1c, hP34-0.44, own structure type, x=0.407(5), a=0.78408(4), c=1.45257(7) nm), La{sub 6}Mg{sub 23}Ge (τ{sub 6}, Fm3{sup ¯}m, cF120–Zr{sub 6}Zn{sub 23}Si, a=1.46694(6) nm), La{sub 4}MgGe{sub 10−x} (τ{sub 7}, x=0.37(1), C2/m, mS60-1.46, own structure type, a=0.88403(8), b=0.86756(8), c=1.7709(2) nm, β=97.16°(1) and La{sub 2}MgGe{sub 6} (τ{sub 8}, Cmce, oS72–Ce{sub 2}(Ga{sub 0.1}Ge{sub 0.9}){sub 7}, a=0.8989(2), b=0.8517(2), c=2.1064(3) nm). Disordering phenomena were revealed in several La–Mg–Ge phases in terms of partially occupied sites. The crystal structures of La{sub 11}Mg{sub 2}Ge{sub 7} and LaMg{sub 3−x}Ge{sub 2} are discussed in details. The latter is a √3a×√3a×2c superstructure of the LaLi{sub 3}Sb{sub 2} structure type; the symmetry reduction scheme is shown in the Bärnighausen formalism terms. - Graphical abstract: La–Mg–Ge isothermal section at 500 °C and group–subgroup relation between the LaLi{sub 3}Sb{sub 2} (parent type) and LaMg{sub 3−x}Ge{sub 2} (derivative) structures. - Highlights: • Novel La−Mg−Ge compounds structure determination from X-ray single crystal data. • Disordering phenomena as common features of the studied germanides. • Bärnighausen formalism as a useful tool for accurate structure determination. • Full isothermal section of the La–Mg–Ge ternary system at 500 °C.

  5. Polarization of Lambda0 and anti-Lambda0 inclusively produced by 610-GeV/c Sigma- and 525-GeV/c proton beams

    SciTech Connect (OSTI)

    Sanchez-Lopez, J.L.; Nelson, K.D.; Engelfried, J.; Akgun, U.; Alkhazov, G.; Amaro-Reyes, J.; Atamantchouk, A.G.; Ayan, A.S.; Balatz, M.Y.; Blanco-Covarrubias, A.; Bondar, N.F.; /Ball State U. /Bogazici U. /Carnegie Mellon U. /Rio de Janeiro, CBPF /Fermilab /Serpukhov, IHEP /Beijing, Inst. High Energy Phys. /Moscow, ITEP /Heidelberg, Max Planck Inst. /Moscow State U. /St. Petersburg, INP

    2007-06-01

    We have measured the polarization of {Lambda}{sup 0} and {bar {Lambda}{sup 0}} inclusively produced by 610 GeV/c {Sigma}{sup -} and 525 GeV/c proton beams in the experiment SELEX during the 1996/7 fixed target run at Fermilab. The polarization was measured as a function of the {Lambda} longitudinal momentum fraction x{sub F} and transverse momentum p{sub t}. For the {Lambda}{sup 0} produced by {Sigma}{sup -} the polarization is increasing with x{sub F} , from slightly negative at x{sub F} {approx} 0 to about 15% at large x{sub F} ; it shows a non-monotonic behavior as a function of p{sub t}. For the proton beam, the {Lambda}{sup 0} polarization is negative and decreasing as a function of x{sub F} and p{sub t}. The {bar {Lambda}{sup 0}} polarization is compatible with 0 for both beam particles over the full kinematic range. The target dependence was examined but no statistically significant difference was found.

  6. Coalescing at 8 GeV in the Fermilab Main Injector

    SciTech Connect (OSTI)

    Scott, D.J.; Capista, D.; Chase, B.; Dye, J.; Kourbanis, I.; Seiya, K.; Yang, M.-J.; /Fermilab

    2012-05-01

    For Project X, it is planned to inject a beam of 3 10{sup 11} particles per bunch into the Main Injector. To prepare for this by studying the effects of higher intensity bunches in the Main Injector it is necessary to perform coalescing at 8 GeV. The results of a series of experiments and simulations of 8 GeV coalescing are presented. To increase the coalescing efficiency adiabatic reduction of the 53 MHz RF is required. This results in {approx}70% coalescing efficiency of 5 initial bunches. Data using wall current monitors has been taken to compare previous work and new simulations for 53 MHz RF reduction, bunch rotations and coalescing, good agreement between experiment and simulation was found. By increasing the number of bunches to 7 and compressing the bunch energy spread a scheme generating approximately 3 10{sup 11} particles in a bunch has been achieved. These bunches will then be used in further investigations.

  7. Dirac gauginos, R symmetry and the 125 GeV Higgs

    SciTech Connect (OSTI)

    Bertuzzo, Enrico; Frugiuele, Claudia; Gregoire, Thomas; Ponton, Eduardo

    2015-04-20

    We study a supersymmetric scenario with a quasi exact R-symmetry in light of the discovery of a Higgs resonance with a mass of 125 GeV. In such a framework, the additional adjoint superfields, needed to give Dirac masses to the gauginos, contribute both to the Higgs mass and to electroweak precision observables. We then analyze the interplay between the two aspects, finding regions in parameter space in which the contributions to the precision observables are under control and a 125 GeV Higgs boson can be accommodated. Furthermore, we estimate the fine-tuning of the model finding regions of the parameter space still unexplored by the LHC with a fine-tuning considerably improved with respect to the minimal supersymmetric scenario. In particular, sizable non-holomorphic (non-supersoft) adjoints masses are required to reduce the fine-tuning.

  8. An overview of the planned Jefferson Lab 12-GeV helium refrigerator upgrade

    SciTech Connect (OSTI)

    Arenius, Dana; Creel, Jonathan; Dixon, Kelly; Ganni, Venkatarao; Knudsen, Peter; Sidi-Yekhlef, Ahmed; Wright, Mathew

    2008-03-01

    In February 2006, Jefferson Laboratory in Newport News, VA, received Critical Decision 1 (CD-1) approval to proceed with the engineering and design of the long anticipated upgrade to increase the beam energy of CEBAF, the Continuous Electron Beam Accelerator Facility, from 6 GeV to 12 GeV. This will require the installation of 10 new cryomodules, and additional 2.1-K refrigeration beyond the available 4600 W to handle the increased heat loads. Additionally, a new experimental hall, Hall D, is planned that will require the installation of a small, available refrigerator. This paper will present an overview of the integration of the new proposed refrigeration system into CEBAF, the installation of the available refrigerator for Hall D, and includes planned work scope, current schedule plans and project status.

  9. Lattice study of an electroweak phase transition at m{sub h} ? 126 GeV

    SciTech Connect (OSTI)

    Laine, M.; Nardini, G.; Rummukainen, K. E-mail: germano@physik.uni-bielefeld.de

    2013-01-01

    We carry out lattice simulations of a cosmological electroweak phase transition for a Higgs mass m{sub h} ? 126 GeV. The analysis is based on a dimensionally reduced effective theory for an MSSM-like scenario including a relatively light coloured SU(2)-singlet scalar, referred to as a right-handed stop. The non-perturbative transition is stronger than in 2-loop perturbation theory, and may offer a window for electroweak baryogenesis. The main remaining uncertainties concern the physical value of the right-handed stop mass which according to our analysis could be as high as m{sub t-tilde{sub R}} ? 155 GeV; a more precise effective theory derivation and vacuum renormalization than available at present are needed for confirming this value.

  10. Dirac gauginos, R symmetry and the 125 GeV Higgs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bertuzzo, Enrico; Frugiuele, Claudia; Grgoire, Thomas; Pontn, Eduardo

    2015-04-01

    We study a supersymmetric scenario with a quasi exact R-symmetry in light of the discovery of a Higgs resonance with a mass of 125 GeV. In such a framework, the additional adjoint superfields, needed to give Dirac masses to the gauginos, contribute both to the Higgs mass and to electroweak precision observables. We analyze the interplay between the two aspects, finding regions in parameter space in which the contributions to the precision observables are under control and a 125 GeV Higgs boson can be accommodated. We estimate the fine-tuning of the model finding regions of the parameter space still unexploredmoreby the LHC with a fine-tuning considerably improved with respect to the minimal supersymmetric scenario. In particular, sizable non-holomorphic (non-supersoft) adjoints masses are required to reduce the fine-tuning.less

  11. Superconducting Magnets for the 12 GeV Upgrade at Jefferson Lab

    SciTech Connect (OSTI)

    Fair, Ruben J.; Young, Glenn R.

    2015-06-01

    Jefferson Laboratory is embarked on an energy upgrade to its flagship continuous electron beam accelerator in order to expand the scope of its research capabilities and probe further into the structure of nuclear particles. The 12 GeV upgrade includes the design, manufacture, integration, installation and commissioning of eight different superconducting magnets in three separate experimental halls. The effort involves other national laboratories, universities and industry spanning three countries. This paper will summarize the key characteristics of these magnets, ranging in size from 0.2 to 23 MJ in stored energy, and featuring many different types and configurations. The paper will also give an overview of the specific technical challenges for each magnet, and a status report on magnet manufacture and expected delivery dates. The 12GeV upgrade at J-Lab represents the largest superconducting magnet fabrication and installation program currently ongoing in the United States and this paper will present the breadth of collaborations supporting it.

  12. N-type doping of Ge by As implantation and excimer laser annealing

    SciTech Connect (OSTI)

    Milazzo, R.; Napolitani, E. De Salvador, D.; Mastromatteo, M.; Carnera, A.; Impellizzeri, G.; Boninelli, S.; Priolo, F.; Privitera, V.; Fisicaro, G.; Italia, M.; La Magna, A.; Cuscun, M.; Fortunato, G.

    2014-02-07

    The diffusion and activation of arsenic implanted into germanium at 40?keV with maximum concentrations below and above the solid solubility (8??10{sup 19}?cm{sup ?3}) have been studied, both experimentally and theoretically, after excimer laser annealing (??=?308?nm) in the melting regime with different laser energy densities and single or multiple pulses. Arsenic is observed to diffuse similarly for different fluences with no out-diffusion and no formation of pile-up at the maximum melt depth. The diffusion profiles have been satisfactorily simulated by assuming two diffusivity states of As in the molten Ge and a non-equilibrium segregation at the maximum melt depth. The electrical activation is partial and decreases with increasing the chemical concentration with a saturation of the active concentration at 1??10{sup 20}?cm{sup ?3}, which represents a new record for the As-doped Ge system.

  13. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

    SciTech Connect (OSTI)

    Ye, Han Yu, Zhongyuan

    2014-11-15

    Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrdinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  14. Dirac gauginos, R symmetry and the 125 GeV Higgs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bertuzzo, Enrico; Frugiuele, Claudia; Gregoire, Thomas; Ponton, Eduardo

    2015-04-20

    We study a supersymmetric scenario with a quasi exact R-symmetry in light of the discovery of a Higgs resonance with a mass of 125 GeV. In such a framework, the additional adjoint superfields, needed to give Dirac masses to the gauginos, contribute both to the Higgs mass and to electroweak precision observables. We then analyze the interplay between the two aspects, finding regions in parameter space in which the contributions to the precision observables are under control and a 125 GeV Higgs boson can be accommodated. Furthermore, we estimate the fine-tuning of the model finding regions of the parameter spacemore » still unexplored by the LHC with a fine-tuning considerably improved with respect to the minimal supersymmetric scenario. In particular, sizable non-holomorphic (non-supersoft) adjoints masses are required to reduce the fine-tuning.« less

  15. Half-metallic ferromagnetism in Cr-doped semiconducting Ge-chalcogenide: Density functional approach

    SciTech Connect (OSTI)

    Saini, Hardev S.; Singh, Mukhtiyar; Thakur, Jyoti; Kashyap, Manish K.

    2014-04-24

    A supercell approach has been used to calculate the electronic and magnetic properties of Cr-doped Ge chalcogenide, Ge{sub 1−x}Cr{sub x}Te (x = 0.25 and 0.125). The calculations have been performed using full potential Linear Augmented Plane Wave (FPLAPW) method within generalized gradient approximation (GGA) as exchange-correlation (XC) potential. The calculated results show that the doping of Cr induces the 100% spin polarization at Fermi level (EF) and showed the robust half metallic ferromagnetism in this compound. Thus, the compound at both dopant concentrations behave as dilute magnetic semiconductor (DMS) showing metallic property in majority and semiconducting for minority spin channels which is best suited for spintronic applications. The total magnetic moments of this compound are mainly due to Cr-d states present at E{sup F} with negligible contribution from electronic states of other atoms.

  16. GeV-scale dark matter: Production at the Main Injector

    SciTech Connect (OSTI)

    Dobrescu, Bogdan A.; Frugiuele, Claudia

    2015-02-03

    Assuming that dark matter particles interact with quarks via a GeV-scale mediator, we study dark matter production in fixed target collisions. The ensuing signal in a neutrino near detector consists of neutral-current events with an energy distribution peaked at higher values than the neutrino background. We find that for a Z' boson of mass around a few GeV that decays to dark matter particles, the dark matter beam produced by the Main Injector at Fermilab allows the exploration of a range of values for the gauge coupling that currently satisfy all experimental constraints. The NO?A near detector is well positioned for probing the presence of a dark matter beam, and future LBNF near detectors would provide more sensitive probes.

  17. Dirac gauginos, R symmetry and the 125 GeV Higgs

    SciTech Connect (OSTI)

    Bertuzzo, Enrico; Frugiuele, Claudia; Grgoire, Thomas; Pontn, Eduardo

    2015-04-01

    We study a supersymmetric scenario with a quasi exact R-symmetry in light of the discovery of a Higgs resonance with a mass of 125 GeV. In such a framework, the additional adjoint superfields, needed to give Dirac masses to the gauginos, contribute both to the Higgs mass and to electroweak precision observables. We analyze the interplay between the two aspects, finding regions in parameter space in which the contributions to the precision observables are under control and a 125 GeV Higgs boson can be accommodated. We estimate the fine-tuning of the model finding regions of the parameter space still unexplored by the LHC with a fine-tuning considerably improved with respect to the minimal supersymmetric scenario. In particular, sizable non-holomorphic (non-supersoft) adjoints masses are required to reduce the fine-tuning.

  18. GeV-scale dark matter: Production at the main injector

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dobrescu, Bogdan A.; Frugiuele, Claudia

    2015-02-03

    In this study, assuming that dark matter particles interact with quarks via a GeV-scale mediator, we study dark matter production in fixed target collisions. The ensuing signal in a neutrino near detector consists of neutral-current events with an energy distribution peaked at higher values than the neutrino background. We find that for a Z' boson of mass around a few GeV that decays to dark matter particles, the dark matter beam produced by the Main Injector at Fermilab allows the exploration of a range of values for the gauge coupling that currently satisfy all experimental constraints. The NOνA near detectormore » is well positioned for probing the presence of a dark matter beam, and future LBNF near detectors would provide more sensitive probes.« less

  19. SRF CAVITY PERFORMANCE OVERVIEW FOR THE 12 GeV UPGRADE

    SciTech Connect (OSTI)

    A. Burrill, G.K. Davis, C.E. Reece, A.V. Reilly, M. Stirbet

    2012-07-01

    The CEBAF accelerator, a recirculating CW electron accelerator that is currently operating at Jefferson Laboratory, is in the process of having 10 new cryomodules installed to allow for the maximum beam energy to be increased from 6 GeV to 12 GeV. This upgrade required the fabrication, processing and RF qualification of 80, seven cell elliptical SRF cavities, a process that was completed in February 2012. The RF performance achieve in the vertical testing dewars has exceeded the design specification by {approx}25% and is a testament to the cavity design and processing cycle that has been implemented. This paper will provide a summary of the cavity RF performance in the vertical tests, as well as review the overall cavity processing cycle and duration for the project.

  20. 6 GeV Parity Violating Deep Inelastic Scattering at Jefferson Laboratory

    SciTech Connect (OSTI)

    Subedi, Ramesh R.; Deng Xiaoyan; Wang Diancheng; Zheng Xiaochao; Michaels, Robert; Pan Kai; Reimer, Paul E.

    2011-10-24

    The 6 GeV Parity Violating Deep Inelastic Scattering (PVDIS) experiment has measured a 10{sup -4} level asymmetry through polarized electron scattering off a liquid deuterium target with a beam energy of 6 GeV. This experiment has a goal of measuring a combination of the product of the weak neutral couplings of the electron and the quark with a factor of six improvement in precision over world data. Precise data for the couplings are essential to search for physics beyond the Standard Model. The experiment took place in Hall A at Thomas Jefferson National Accelerator Facility (Jefferson Laboratory) and data collection was completed in the end of 2009. A highly specialized counting data acquisition system with an inherent particle identification was developed and utilized. We have taken data at two Q{sup 2} points in order to possibly address the hadronic correction due to higher twist effects. An overview of the experiment will be presented.

  1. GeV-scale dark matter: Production at the Main Injector

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dobrescu, Bogdan A.; Frugiuele, Claudia

    2015-02-03

    Assuming that dark matter particles interact with quarks via a GeV-scale mediator, we study dark matter production in fixed target collisions. The ensuing signal in a neutrino near detector consists of neutral-current events with an energy distribution peaked at higher values than the neutrino background. We find that for a Z' boson of mass around a few GeV that decays to dark matter particles, the dark matter beam produced by the Main Injector at Fermilab allows the exploration of a range of values for the gauge coupling that currently satisfy all experimental constraints. The NO?A near detector is well positionedmorefor probing the presence of a dark matter beam, and future LBNF near detectors would provide more sensitive probes.less

  2. Structural and chemical ordering of Heusler CoxMnyGez epitaxial films on Ge (111). Quantitative study using traditional and anomalous x-ray diffraction techniques

    SciTech Connect (OSTI)

    Collins, B. A.; Chu, Y.; He, L.; Haskel, D.; Tsui, F.

    2015-12-14

    We found that epitaxial films of CoxMnyGez grown on Ge (111) substrates by molecular-beam-epitaxy techniques have been investigated as a continuous function of composition using combinatorial synchrotron x-ray diffraction (XRD) and x-ray fluorescence (XRF) spectroscopy techniques. A high-resolution ternary epitaxial phase diagram is obtained, revealing a small number of structural phases stabilized over large compositional regions. Ordering of the constituent elements in the compositional region near the full Heusler alloy Co2MnGe has been examined in detail using both traditional XRD and a new multiple-edge anomalous diffraction (MEAD) technique. Multiple-edge anomalous diffraction involves analyzing the energy dependence of multiple reflections across each constituent absorption edge in order to detect and quantify the elemental distribution of occupation in specific lattice sites. Results of this paper show that structural and chemical ordering are very sensitive to the Co : Mn atomic ratio, such that the ordering is the highest at an atomic ratio of 2 but significantly reduced even a few percent off this ratio. The in-plane lattice is nearly coherent with that of the Ge substrate, while the approximately 2% lattice mismatch is accommodated by the out-of-plane tetragonal strain. Furthermore, the quantitative MEAD analysis reveals no detectable amount (<0.5%) of Co-Mn site swapping, but instead high levels (26%) of Mn-Ge site swapping. Increasing Ge concentration above the Heusler stoichiometry (Co 0.5 Mn 0.25 Ge 0.25 ) is shown to correlate with increased lattice vacancies, antisites, and stacking faults, but reduced lattice relaxation. The highest degree of chemical ordering is observed off the Heusler stoichiometry with a Ge enrichment of 5 at.%.

  3. eDT and Model-based Configuration of 12GeV CEBAF

    SciTech Connect (OSTI)

    Turner, Dennison L.

    2015-09-01

    This poster will discuss model-driven setup of CEBAF for the 12GeV era, focusing on the elegant Download Tool (eDT). eDT is a new operator tool that generates magnet design setpoints for various machine energies and pass configurations. eDT was developed in the effort towards a process for reducing machine configuration time and reproducibility by way of an accurate accelerator model.

  4. Magnetic fields and fluctuations in weakly Mn doped ZnGeP{sub 2}

    SciTech Connect (OSTI)

    Mengyan, P. W.; Lichti, R. L.; Baker, B. B.; Celebi, Y. G.; Catak, E.; Carroll, B. R.; Zawilski, K. T.; Schunemann, P. G.

    2014-02-21

    We report on our measurements of local and bulk magnetic features in weakly Mn doped ZnGeP{sub 2}. Utilizing muon spin rotation and relaxation measurements, we identify local ferromagnetic order and fluctuations in the local fields as sampled by an implanted muon (?{sup +}). We also report on field induced ferromagnetism occurring above the claimed paramagnetic to ferromagnetic transition temperature (T{sub c} = 312 K)

  5. HASL-258 IN SITU Ge(Li) AND Nal(T1) GAMMA-RAY SPECTROMETRY

    Office of Scientific and Technical Information (OSTI)

    HASL-258 IN SITU Ge(Li) AND Nal(T1) GAMMA-RAY SPECTROMETRY September 1972 Health and Safety Laboratory (AEC) New York, New York DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency Thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus,

  6. Reliable Nanomanufacturing of Ge-Sn Alloys for Solar Energy Conversion |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Ames Laboratory Reliable Nanomanufacturing of Ge-Sn Alloys for Solar Energy Conversion Based on the US Department of Energy's International Energy Outlook 2014 report, global consumption of energy is estimated to rise by more than 50% between 2004 and 2030. One of the biggest scientific challenges is finding a clean renewable energy resource that will replace fossil fuels and avoid adverse effects on climate, environment, and health. This project aims to advance our understanding of the

  7. Observation of negative differential capacitance (NDC) in Ti Schottky diodes on SiGe islands

    SciTech Connect (OSTI)

    Rangel-Kuoppa, Victor-Tapio; Jantsch, Wolfgang; Tonkikh, Alexander; Zakharov, Nikolay; Werner, Peter

    2013-12-04

    The Negative Differential Capacitance (NDC) effect on Ti Schottky diodes formed on n-type Silicon samples with embedded Germanium Quantum Dots (QDs) is observed and reported. The NDC-effect is detected using capacitance-voltage (CV) method at temperatures below 200 K. It is explained by the capture of electrons in Germanium QDs. Our measurements reveal that each Ge QD captures in average eight electrons.

  8. Optics solutions for pp operation with electron lenses at 100 GeV

    SciTech Connect (OSTI)

    White, S.; Fischer, W.; Luo, Y.

    2014-07-12

    Electron lenses for head-on compensation are currently under commissioning and foreseen to be operational for the 2015 polarized proton run. These devices will provide a partial compensation of head-on beam-beam effects and allow to double the RHIC proton luminosity. This note reviews the optics constraints related to beam-beam compensation and summarizes the current lattice options for proton operation at 100 GeV.

  9. High-transition-temperature superconductors in the Nb-Al-Ge system

    DOE Patents [OSTI]

    Giorgi, A.L.; Szklarz, E.G.

    1972-09-26

    The patent describes superconducting materials of the nominal composition Nb(x)Al(y)Ge(l-y), where x is in the range of 1.9 to 2.8 and y is in the range of 0.5 to 0.9, having transition temperatures in the 19 -20K. range which are readily produced by annealing arc-melted compositions, or cold-pressed, heat-treated compositions at moderate temperatures for reasonably long times (about 50 hours).

  10. Interactive Analysis of Gamm-ray Spectra from GE Semiconductor Detectors

    Energy Science and Technology Software Center (OSTI)

    1997-09-25

    GAUSS IX is a tool to interactively analyze gamma-ray spectra from Ge Semicondutor detectors. The user has full control over the view of the spectrum being analyzed and the location of the peaks and peak regions. Analysis is performed at user request to the requested peak regions. The fit of a peak region can be previewed before archival or deletion. An iterative procedure is available for calibrating the energy and width equations.

  11. Next GeNeratioN SafeGuardS iNitiative

    National Nuclear Security Administration (NNSA)

    Next GeNeratioN SafeGuardS iNitiative 2 DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor Battelle Memorial Institute, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use

  12. Evidence for the 125 GeV Higgs boson decaying to a pair of $$\\tau$$ leptons

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chatrchyan, Serguei

    2014-01-20

    A search for a standard model Higgs boson decaying into a pair of tau leptons is performed using events recorded by the CMS experiment at the LHC in 2011 and 2012. The dataset corresponds to an integrated luminosity of 4.9 inverse femtobarns at a centre-of-mass energy of 7 TeV and 19.7 inverse femtobarns at 8 TeV. Each tau lepton decays hadronically or leptonically to an electron or a muon, leading to six different final states for the tau-lepton pair, all considered in this analysis. An excess of events is observed over the expected background contributions, with a local significance largermore » than 3 standard deviations for m[H] values between 115 and 130 GeV. The best fit of the observed H to tau tau signal cross section for m[H] = 125 GeV is 0.78 +- 0.27 times the standard model expectation. These observations constitute evidence for the 125 GeV Higgs boson decaying to a pair of tau leptons.« less

  13. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    SciTech Connect (OSTI)

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433 (China); Chen, D. D.; Xu, F. [SHU-SolarE R and D Lab, Department of Physics, College of Science, Shanghai University, Shanghai 200444 (China)

    2014-07-14

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488?nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325?nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  14. ON THE ORIGIN OF > 10 GeV PHOTONS IN GAMMA-RAY BURST AFTERGLOWS

    SciTech Connect (OSTI)

    Wang Xiangyu; Liu Ruoyu [School of Astronomy and Space Science, Nanjing University, Nanjing 210093 (China); Lemoine, Martin [Institut d'Astrophysique de paris, CNRS, UPMC, 98 bis boulevard Arago, F-75014 Paris (France)

    2013-07-10

    Fermi/LAT has detected long-lasting high-energy photons (>100 MeV) from gamma-ray bursts (GRBs), with the highest energy photons reaching about 100 GeV. One proposed scenario is that they are produced by high-energy electrons accelerated in GRB forward shocks via synchrotron radiation. We study the maximum synchrotron photon energy in this scenario, considering the properties of the microturbulence magnetic fields behind the shock, as revealed by recent particle-in-cell simulations and theoretical analyses of relativistic collisionless shocks. Due to the small-scale nature of the microturbulent magnetic field, the Bohm acceleration approximation, in which the scattering mean free path is equal to the particle Larmor radius, breaks down at such high energies. This effect leads to a typical maximum synchrotron photon of a few GeV at 100 s after the burst and this maximum synchrotron photon energy decreases quickly with time. We show that the fast decrease of the maximum synchrotron photon energy leads to a fast decay of the synchrotron flux. The 10-100 GeV photons detected after the prompt phase cannot be produced by the synchrotron mechanism. They could originate from the synchrotron self-Compton emission of the early afterglow if the circumburst density is sufficiently large, or from the external inverse Compton process in the presence of central X-ray emission, such as X-ray flares and prompt high-latitude X-ray emission.

  15. 9 GeV energy gain in a beam-driven plasma wakefield accelerator

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Litos, M.; Adli, E.; Allen, J. M.; An, W.; Clarke, C. I.; Corde, S.; Clayton, C. E.; Frederico, J.; Gessner, S. J.; Green, S. Z.; et al

    2016-02-15

    An electron beam has gained a maximum energy of 9 GeV per particle in a 1.3 m-long electron beam-driven plasma wakefield accelerator. The amount of charge accelerated in the spectral peak was 28.3 pC, and the root-mean-square energy spread was 5.0%. The mean accelerated charge and energy gain per particle of the 215 shot data set was 115 pC and 5.3 GeV, respectively, corresponding to an acceleration gradient of 4.0 GeV m-1 at the spectral peak. Moreover, the mean energy spread of the data set was 5.1%. Our results are consistent with the extrapolation of the previously reported energy gainmore » results using a shorter, 36 cm-long plasma source to within 10%, evincing a non-evolving wake structure that can propagate distances of over a meter in length. Wake-loading effects were evident in the data through strong dependencies observed between various spectral properties and the amount of accelerated charge.« less

  16. The Time of Flight Upgrade for CLAS at 12 GeV

    SciTech Connect (OSTI)

    Graham, Lewis

    2007-10-26

    The Time of Flight (TOF) system is a detection system within the CEBAF Large Acceptance Spectrometer (CLAS) at Jefferson National Accelerator Facility. CLAS, being a magnetic toroidal multi-gap spectrometer, is used in the detection of particles and their varying properties. Jefferson National Accelerator Facility is providing an incoming electron beam of energy 6 GeV that is used to probe the structure and production of these particles. The CLAS detector is currently adapted to energies of up to 6 GeV, but with recent approval it will now upgrade to energies of 12 GeV. CLAS consists of drift chambers to determine the charged particle paths, gas Cherenkov counters for electron discrimination, TOF scintillators for particle identification, and an electromagnetic calorimeter for identifying showering electrons and photons. The TOF system, which is our focus, is composed of scintillation counters at the forward angle, and covers an area of 206 meters squared. Therefore, we look to upgrade and construct the TOF system of CLAS and outline strategies of current construction, purpose for design, and outlook for the TOF system upgrade.

  17. The Time of Flight Upgrade for CLAS at 12 GeV

    SciTech Connect (OSTI)

    Lewis Graham

    2007-10-01

    The Time of Flight (TOF) system is a detection system within the CEBAF Large Acceptance Spectrometer (CLAS) at Jefferson National Accelerator Facility. CLAS, being a magnetic toroidal multi-gap spectrometer, is used in the detection of particles and their varying properties. Jefferson National Accelerator Facility is providing an incoming electron beam of energy 6 GeV that is used to probe the structure and production of these particles. The CLAS detector is currently adapted to energies of up to 6 GeV, but with recent approval it will now upgrade to energies of 12 GeV. CLAS consists of drift chambers to determine the charged particle paths, gas Cherenkov counters for electron discrimination, TOF scintillators for particle identification, and an electromagnetic calorimeter for identifying showering electrons and photons. The TOF system, which is our focus, is composed of scintillation counters at the forward angle, and covers an area of 206 meters squared. Therefore, we look to upgrade and construct the TOF system of CLAS and outline strategies of current construction, purpose for design, and outlook for the TOF system upgrade

  18. Facet-selective nucleation and conformal epitaxy of Ge shells on Si nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Nguyen, Binh -Minh; Swartzentruber, Brian; Ro, Yun Goo; Dayeh, Shadi A.

    2015-10-08

    Knowledge of nanoscale heteroepitaxy is continually evolving as advances in material synthesis reveal new mechanisms that have not been theoretically predicted and are different than what is known about planar structures. In addition to a wide range of potential applications, core/shell nanowire structures offer a useful template to investigate heteroepitaxy at the atomistic scale. We show that the growth of a Ge shell on a Si core can be tuned from the theoretically predicted island growth mode to a conformal, crystalline, and smooth shell by careful adjustment of growth parameters in a narrow growth window that has not been exploredmore » before. In the latter growth mode, Ge adatoms preferentially nucleate islands on the {113} facets of the Si core, which outgrow over the {220} facets. Islands on the low-energy {111} facets appear to have a nucleation delay compared to the {113} islands; however, they eventually coalesce to form a crystalline conformal shell. As a result, synthesis of epitaxial and conformal Si/Ge/Si core/multishell structures enables us to fabricate unique cylindrical ring nanowire field-effect transistors, which we demonstrate to have steeper on/off characteristics than conventional core/shell nanowire transistors.« less

  19. Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

    SciTech Connect (OSTI)

    Gallagher, J. D.; Menéndez, J.; Senaratne, C. L.; Sims, P.; Kouvetakis, J.; Aoki, T.

    2015-03-02

    The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge{sub 1−y}Sn{sub y} i-layers spanning a broad compositional range below and above the crossover Sn concentration y{sub c} where the Ge{sub 1−y}Sn{sub y} alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

  20. Study of plutonium disposition using existing GE advanced Boiling Water Reactors

    SciTech Connect (OSTI)

    Not Available

    1994-06-01

    The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the US to dispose of 50 to 100 metric tons of excess of plutonium in a safe and proliferation resistant manner. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing permanent conversion and long-term diversion resistance to this material. The NAS study ``Management and Disposition of Excess Weapons Plutonium identified Light Water Reactor spent fuel as the most readily achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a US disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a typical 1155 MWe GE Boiling Water Reactor (BWR) is utilized to convert the plutonium to spent fuel. A companion study of the Advanced BWR has recently been submitted. The MOX core design work that was conducted for the ABWR enabled GE to apply comparable fuel design concepts and consequently achieve full MOX core loading which optimize plutonium throughput for existing BWRs.

  1. Accelerating Into the Future: From 0 to GeV in a Few Centimeters (LBNL Summer Lecture Series)

    ScienceCinema (OSTI)

    Leemans, Wim [LOASIS Program, AFRD

    2011-04-28

    Summer Lecture Series 2008: By exciting electric fields in plasma-based waveguides, lasers accelerate electrons in a fraction of the distance conventional accelerators require. The Accelerator and Fusion Research Division's LOASIS program, headed by Wim Leemans, has used 40-trillion-watt laser pulses to deliver billion-electron-volt (1 GeV) electron beams within centimeters. Leemans looks ahead to BELLA, 10-GeV accelerating modules that could power a future linear collider.

  2. CuYb{sub 2}Ge{sub 4}O{sub 12}, a new bidimensionally tunneled structure

    SciTech Connect (OSTI)

    Campa, J.A.; Cascales, C.; Gueierrez-Puebla, E.; Monge, M.A.; Rasines, I.; Ruiz Valero, C.

    1996-06-01

    Employing CuO as self flux crystals of CuYb{sub 2}Ge{sub 4}O{sub 12} have been grown for the first time. The crystal structure of CuYb{sub 2}Ge{sub 4}O{sub 12} has been determined by single-crystal X-ray diffraction in the triclinic P1 (No. 2) space group to an R value of 6.1%, with (a) = 7.156(2) {Angstrom}, (b) = 7.937(3) {Angstrom}, (c) = 4.905(3) {Angstrom}, {alpha} = 86.63(3){degrees}, {Beta} = 102.41(4){degrees}, {gamma}=1114.12(3){degrees}, V = 248.2(2) {Angstrom}{sup 3}, Z = 1, and D{sub c} = 5.97 gcm{sup {minus}3}. The novel tridimensional CuYb{sub 2}Ge{sub 4}O{sub 12} structure type can be conceived as formed by layers of (GeO{sub 4}){sub 4} units of vertex-sharing GeO{sub 4} squares connecting (GeO{sub 4}){sub 4} units, with channels or tunnels of size up to 4.08 {Angstrom} in the a and c directions. A comparison is made between the structure types of the title germanate and recently reported CuNd{sub 2}Ge{sub 2}O{sub 8}. The temperature dependence from 350 to 1.8 K of the reciprocal dc magnetic susceptibility for CuYb{sub 2}Ge{sub 4}O{sub 12} is shown and presents a deviation from linearity over the whole temperature range. The infrared spectrum between 1000 and 100 cm{sup {minus}1} is given and related with those of comparable species.

  3. Accelerating Into the Future: From 0 to GeV in a Few Centimeters (LBNL Summer Lecture Series)

    ScienceCinema (OSTI)

    Leemans, Wim [LOASIS Program, AFRD

    2009-09-01

    July 8, 2008 Berkeley Lab lecture: By exciting electric fields in plasma-based waveguides, lasers accelerate electrons in a fraction of the distance conventional accelerators require. The Accelerator and Fusion Research Division's LOASIS program, headed by Wim Leemans, has used 40-trillion-watt laser pulses to deliver billion-electron-volt (1 GeV) electron beams within centimeters. Leemans looks ahead to BELLA, 10-GeV accelerating modules that could power a future linear collider.

  4. Measurement of J/? Azimuthal Anisotropy in Au+Au Collisions at ?sNN=200 GeV

    SciTech Connect (OSTI)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Alekseev, I.; Alford, J.; Anson, C. D.; Aparin, A.; Arkhipkin, D.; Aschenauer, E.; Averichev, G. S.; Balewski, J.; Banerjee, A.; Barnovska, Z.; Beavis, D. R.; Bellwied, R.; Betancourt, M. J.; Betts, R. R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Borowski, W.; Bouchet, J.; Brandin, A. V.; Brovko, S. G.; Bruna, E.; Bltmann, S.; Bunzarov, I.; Burton, T. P.; Butterworth, J.; Cai, X. Z.; Caines, H.; Caldern de la Barca Snchez, M.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chaloupka, P.; Chang, Z.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Chen, L.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Chung, P.; Chwastowski, J.; Codrington, M. J. M.; Corliss, R.; Cramer, J. G.; Crawford, H. J.; Cui, X.; Das, S.; Davila Leyva, A.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derradi de Souza, R.; Dhamija, S.; di Ruzza, B.; Didenko, L.; Ding, F.; Dion, A.; Djawotho, P.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, C. M.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Elnimr, M.; Engelage, J.; Eppley, G.; Eun, L.; Evdokimov, O.; Fatemi, R.; Fazio, S.; Fedorisin, J.; Fersch, R. G.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, E.; Gagliardi, C. A.; Gangadharan, D. R.; Garand, D.; Geurts, F.; Gibson, A.; Gliske, S.; Grebenyuk, O. G.; Grosnick, D.; Gupta, A.; Gupta, S.; Guryn, W.; Haag, B.; Hajkova, O.; Hamed, A.; Han, L-X.; Harris, J. W.; Hays-Wehle, J. P.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Hofman, D. J.; Horvat, S.; Huang, B.; Huang, H. Z.; Huck, P.; Humanic, T. J.; Igo, G.; Jacobs, W. W.; Jena, C.; Judd, E. G.; Kabana, S.; Kang, K.; Kapitan, J.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Kesich, A.; Kikola, D. P.; Kiryluk, J.; Kisel, I.; Kisiel, A.; Klein, S. R.; Koetke, D. D.; Kollegger, T.; Konzer, J.; Koralt, I.; Korsch, W.; Kotchenda, L.; Kravtsov, P.; Krueger, K.; Kulakov, I.; Kumar, L.; Lamont, M. A. C.; Landgraf, J. M.; Landry, K. D.; LaPointe, S.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, C.; Li, W.; Li, X.; Li, X.; Li, Y.; Li, Z. M.; Lima, L. M.; Lisa, M. A.; Liu, F.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Lu, Y.; Luo, X.; Luszczak, A.; Ma, G. L.; Ma, Y. G.; Madagodagettige Don, D. M. M. D.; Mahapatra, D. P.; Majka, R.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; McDonald, D.; McShane, T. S.; Mioduszewski, S.; Mitrovski, M. K.; Mohammed, Y.; Mohanty, B.; Mondal, M. M.; Munhoz, M. G.; Mustafa, M. K.; Naglis, M.; Nandi, B. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nogach, L. V.; Novak, J.; Odyniec, G.; Ogawa, A.; Oh, K.; Ohlson, A.; Okorokov, V.; Oldag, E. W.; Oliveira, R. A. N.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pan, Y. X.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Pawlik, B.; Pei, H.; Perkins, C.; Peryt, W.; Pile, P.; Planinic, M.; Pluta, J.; Poljak, N.; Porter, J.; Poskanzer, A. M.; Powell, C. B.; Pruneau, C.; Pruthi, N. K.; Przybycien, M.; Pujahari, P. R.; Putschke, J.; Qiu, H.; Ramachandran, S.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Riley, C. K.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Ross, J. F.; Ruan, L.; Rusnak, J.; Sahoo, N. R.; Sahu, P. K.; Sakrejda, I.; Salur, S.; Sandacz, A.; Sandweiss, J.; Sangaline, E.; Sarkar, A.; Schambach, J.; Scharenberg, R. P.; Schmah, A. M.; Schmidke, B.; Schmitz, N.; Schuster, T. R.; Seger, J.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shao, M.; Sharma, B.; Sharma, M.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Singaraju, R. N.; Skoby, M. J.; Smirnov, D.; Smirnov, N.; Solanki, D.; Sorensen, P.; deSouza, U. G.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stevens, J. R.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Sumbera, M.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Svirida, D. N.; Symons, T. J. M.; Szanto de Toledo, A.; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarini, L. H.; Tarnowsky, T.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Tlusty, D.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Trzeciak, B. A.; Tsai, O. D.; Turnau, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Nieuwenhuizen, G.; Vanfossen, J. A.; Varma, R.; Vasconcelos, G. M. S.; Videbk, F.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wada, M.; Wang, F.; Wang, G.; Wang, H.; Wang, J. S.; Wang, Q.; Wang, X. L.; Wang, Y.; Webb, G.; Webb, J. C.; Westfall, G. D.; Whitten, C.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y. F.; Xiao, Z.; Xie, W.; Xin, K.; Xu, H.; Xu, N.; Xu, Q. H.; Xu, W.; Xu, Y.; Xu, Z.; Xue, L.; Yang, Y.; Yang, Y.; Yepes, P.; Yi, L.; Yip, K.; Yoo, I-K.; Zawisza, M.; Zbroszczyk, H.; Zhang, J. B.; Zhang, S.; Zhang, X. P.; Zhang, Y.

    2013-08-02

    The measurement of J/? azimuthal anisotropy is presented as a function of transverse momentum for different centralities in Au+Au collisions at ?sNN>/sub>=200 GeV. The measured J/? elliptic flow is consistent with zero within errors for transverse momentum between 2 and 10 GeV/c. Our measurement suggests that J/? particles with relatively large transverse momenta are not dominantly produced by coalescence from thermalized charm quarks, when comparing to model calculations.

  5. Measurement of J/? Azimuthal Anisotropy in Au+Au Collisions at ?sNN=200 GeV

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Alekseev, I.; Alford, J.; Anson, C. D.; Aparin, A.; Arkhipkin, D.; et al

    2013-08-02

    The measurement of J/? azimuthal anisotropy is presented as a function of transverse momentum for different centralities in Au+Au collisions at ?sNN>/sub>=200 GeV. The measured J/? elliptic flow is consistent with zero within errors for transverse momentum between 2 and 10 GeV/c. Our measurement suggests that J/? particles with relatively large transverse momenta are not dominantly produced by coalescence from thermalized charm quarks, when comparing to model calculations.

  6. Xu Hou,1,2 Yuhang Hu,1 Alison Grinthal...

    Office of Scientific and Technical Information (OSTI)

    ... flow rate Q, and on the viscosity of the transport liquid ... robust non-fouling behavior for solutions and suspensions. ... Xu, Z. K. Mineral-Coated Polymer Membranes with ...

  7. Cosmology on the Beach - Wayne Hu: Lecture 2

    ScienceCinema (OSTI)

    Wayne Hu

    2010-01-08

    The lecture was delivered as part of the "Cosmology at the Beach" winter school organized by Berkeley Lab's George Smoot in Los Cabos, Mexico from Jan. 12-16, 2009.

  8. Soft chemistry synthesis of high-crystalline orthogermanate CeGeO{sub 4}: A new photocatalyst

    SciTech Connect (OSTI)

    Xing Jun; Yang Chen; Li Weikun; Gong Xueqing; Yang Huagui

    2013-01-15

    A new orthogermanate phase of CeGeO{sub 4} was studied and the corresponding nanocrystals have been successfully synthesized via a facile hydrothermal method without adding any capping agent. The pH value of the solution and the reaction time were also further investigated, respectively. The as-prepared CeGeO{sub 4} nanocrystals with a uniform size of 15 nm have been characterized by using XRD/TEM/TGA/UV-vis techniques, and their electronic structures and band gap were calculated based on a plane wave density function theory (DFT). The promising photocatalytic properties of CeGeO{sub 4} have been confirmed through monitoring reactive oxidative species generated in photocatalytic reactions of terephthalic acid as a fluorescence probe. - Graphical Abstract: A novel photocatalyst CeGeO{sub 4} was prepared. Highlights: Black-Right-Pointing-Pointer CeGeO{sub 4} as a novel photocatalyst was successfully synthesized by a hydrothermal method. Black-Right-Pointing-Pointer Electronic structure and band gap were calculated based on DFT. Black-Right-Pointing-Pointer CeGeO{sub 4} exhibited a promising photocatalytic performance.

  9. Synthesis, structural characterization and magnetic properties of RE{sub 2}MgGe{sub 2} (RE=rare-earth metal)

    SciTech Connect (OSTI)

    Suen, Nian-Tzu; Tobash, Paul H.; Bobev, Svilen

    2011-11-15

    A series of rare-earth metal-magnesium-germanides RE{sub 2}MgGe{sub 2} (RE=Y, Nd, Sm, Gd-Tm, Lu) has been synthesized by reactions of the corresponding elements at high temperature. Their structures have been established by single-crystal and powder X-ray diffraction and belong to the Mo{sub 2}FeB{sub 2} structure type (space group P4/mbm (No. 127), Z=2; Pearson symbol tP10). Temperature dependent DC magnetization measurements indicate Curie-Weiss paramagnetism in the high-temperature regime for all members of the family, excluding Y{sub 2}MgGe{sub 2}, Sm{sub 2}MgGe{sub 2}, and Lu{sub 2}MgGe{sub 2}. At cryogenic temperatures (ca. 60 K and below), most RE{sub 2}MgGe{sub 2} phases enter into an antiferromagnetic ground-state, except for Er{sub 2}MgGe{sub 2} and Tm{sub 2}MgGe{sub 2}, which do not undergo magnetic ordering down to 5 K. The structural variations as a function of the decreasing size of the rare-earth metals, following the lanthanide contraction, and the changes in the magnetic properties across the series are discussed as well. - Graphical Abstract: The structure of RE{sub 2}MgGe{sub 2} (RE=Y, Nd, Sm, Gd-Tm, Lu) can be best viewed as 2-dimensional slabs of Mg and Ge atoms (anionic sub-lattice), and layers of rare-earth metal atoms (cationic sub-lattice) between them. Within this description, one should consider the Ge-Ge dumbbells (formally Ge{sup 6-}{sub 2}), interconnected with square-planar Mg atom as forming flat [MgGe{sub 2}] layers (z=0), stacked along the c-axis with the layers at z=1/2, made of rare-earth metal cations (formally RE{sup 3+}). Highlights: > RE{sub 2}MgGe{sub 2} (RE=Y, Nd, Sm, Gd-Tm, Lu) are new ternary germanides. > Their structures can be recognized as a 1:1 intergrowth of CsCl- and AlB{sub 2}-like slabs. > Ge atoms are covalently bound into Ge{sub 2} dumbbells. > Most RE{sub 2}MgGe{sub 2} phases are antiferromagnetically ordered at cryogenic temperatures.

  10. Modeling of GE Appliances in GridLAB-D: Peak Demand Reduction

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat GNVSR; Prakash Kumar, Nirupama; Leistritz, Sean M.; Parker, Graham B.

    2012-04-29

    The widespread adoption of demand response enabled appliances and thermostats can result in significant reduction to peak electrical demand and provide potential grid stabilization benefits. GE has developed a line of appliances that will have the capability of offering several levels of demand reduction actions based on information from the utility grid, often in the form of price. However due to a number of factors, including the number of demand response enabled appliances available at any given time, the reduction of diversity factor due to the synchronizing control signal, and the percentage of consumers who may override the utility signal, it can be difficult to predict the aggregate response of a large number of residences. The effects of these behaviors can be modeled and simulated in open-source software, GridLAB-D, including evaluation of appliance controls, improvement to current algorithms, and development of aggregate control methodologies. This report is the first in a series of three reports describing the potential of GE's demand response enabled appliances to provide benefits to the utility grid. The first report will describe the modeling methodology used to represent the GE appliances in the GridLAB-D simulation environment and the estimated potential for peak demand reduction at various deployment levels. The second and third reports will explore the potential of aggregated group actions to positively impact grid stability, including frequency and voltage regulation and spinning reserves, and the impacts on distribution feeder voltage regulation, including mitigation of fluctuations caused by high penetration of photovoltaic distributed generation and the effects on volt-var control schemes.

  11. Hard photon processes in electron-positron annihilation at 29 GeV

    SciTech Connect (OSTI)

    Gold, M.S.

    1986-11-01

    The hard photon processes ..mu mu gamma.. and hadrons + ..gamma.. in e/sup +/e/sup -/ annihilation at 29 GeV have been studied. The study is based on an integrated luminosity of 226 pb/sup -1/ taken at PEP with the Mark II detector. For the ..mu mu gamma.. process, a small fraction of non-planar events are observed with missing momentum along the beam direction. The resulting missing energy spectrum is consistent with that expected from higher order effects. The observed cross section is consistent with the predicted cross section for this process, sigma/sup exp/sigma/sup th/ = .90 +- .05 +- .06. The observed hard photon energy spectrum and mass distributions are found to be in agreement with O(..cap alpha../sup 3/) QED. The measured charge asymmetry is in good agreement with the predicted value, A/sub exp/A/sub th/ = .83 +- .25 +- .12. The ..mu gamma.. invariant mass distribution is used to place a limit on a possible excited muon coupling G..gamma../M* for excited muon masses in the range 1 < M* < 21 GeV of (G..gamma../M*)/sup 2/ < 10/sup -5/ GeV/sup -2/ at a 95% confidence level. In the hadrons + ..gamma.. process, evidence for final state radiation is found in an excess of events over that predicted from initial state radiation alone of 253 +- 54 +- 60 events. Further evidence for final state radiation is found in a large hadronic charge asymmetry A/sub Had+..gamma../= (-24.6 +- 5.5)%.

  12. Study of plutonium disposition using the GE Advanced Boiling Water Reactor (ABWR)

    SciTech Connect (OSTI)

    1994-04-30

    The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the U.S. to disposition 50 to 100 metric tons of excess of plutonium in parallel with a similar program in Russia. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing long-term diversion resistance to this material. The NAS study {open_quotes}Management and Disposition of Excess Weapons Plutonium{close_quotes} identified light water reactor spent fuel as the most readily achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a U.S. disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a 1350 MWe GE Advanced Boiling Water Reactor (ABWR) is utilized to convert the plutonium to spent fuel. The ABWR represents the integration of over 30 years of experience gained worldwide in the design, construction and operation of BWRs. It incorporates advanced features to enhance reliability and safety, minimize waste and reduce worker exposure. For example, the core is never uncovered nor is any operator action required for 72 hours after any design basis accident. Phase 1 of this study was documented in a GE report dated May 13, 1993. DOE`s Phase 1 evaluations cited the ABWR as a proven technical approach for the disposition of plutonium. This Phase 2 study addresses specific areas which the DOE authorized as appropriate for more in-depth evaluations. A separate report addresses the findings relative to the use of existing BWRs to achieve the same goal.

  13. Exciting News About LEAP-X and Thermal Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exciting News About LEAP-X and Thermal Systems Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Exciting News About LEAP-X and Thermal Systems Todd Wetzel 2011.07.20 I was excited to hear that the LEAP-X engine (Leading Edge Aviation Propulsion) developed by CFM International, a 50/50 joint venture between GE and Snecma

  14. Production of J/{Psi} in 800 GeV/c p-Si interactions

    SciTech Connect (OSTI)

    Fermilab E771 Collaboration

    1994-07-01

    The authors report on the analysis of high mass opposite sign dimuon states produced in pSi interactions at {radical}s = 38.7 GeV. These data have been collected with an open geometry fixed target spectrometer in the Fermilab Experiment E771. J/{psi} and {psi}(2S) total cross section sand J/{psi} x{sub f} and p{sub t} differential cross sections have been measured and compared with extrapolations from data at lower energies. Evidence for {Upsilon} meson production is also presented.

  15. The Intelligence Behind the Robotic-Enabled System | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Intelligence Behind the Robotic-Enabled System Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Intelligence Behind the Robotic-Enabled System Lynn DeRose 2013.02.06 Last week, GE announced that we are working with the U.S. Department of Veteran's Affairs (VA) to develop a robotic-enabled intelligent system, which

  16. The Right Connections: Seeing the Future of Energy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Right Connections: Seeing the Future of Energy Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Right Connections: Seeing the Future of Energy Chief Technology Officer and head of GE's Global Research organization Vic Abate spoke at the 2016 ARPA-e Energy Innovation Summit in Washington, D.C. He spoke about the

  17. The Science Behind Good BBQ: Know Your Compounds | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Science Behind Good BBQ: Know Your Compounds Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Science Behind Good BBQ: Know Your Compounds Lynn DeRose 2015.03.14 This is the second in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant

  18. 9 GeV energy gain in a beam-driven plasma wakefield accelerator

    Office of Scientific and Technical Information (OSTI)

    9 GeV energy gain in a beam-driven plasma wakefield accelerator This content has been downloaded from IOPscience. Please scroll down to see the full text. View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 192.107.175.1 This content was downloaded on 27/04/2016 at 15:27 iopscience.iop.org Please note that terms and conditions apply. Plasma Physics and Controlled Fusion OPEN ACCESS IOP Publishing Plasma Phys. Control. Fusion 58 (2016)

  19. Strangelet search in Pb-Pb interactions at 158 GeV/{ital c} per nucleon

    SciTech Connect (OSTI)

    Appelquist, G.; Baglin, C.; Beringer, J.; Bohm, C.; Borer, K.; Bussiere, A.; Dittus, F.; Elsener, K.; Frei, D.; Gorodetzky, P.; Guillaud, J.P.; Hugentobler, E.; Klingenberg, R.; Linden, T.; Lohmann, K.D.; Moser, U.; Pal, T.; Pretzl, K.; Schacher, J.; Sellden, B.; Stoffel, F.; Tuominiemi, J.; Zhang, Q.P.

    1996-05-01

    The NA52 experiment searches for long-lived massive strange quark matter particles, so-called {ital strangelets}, produced in Pb-Pb collisions at a beam momentum of {ital p}{sub lab}=158 AGeV/{ital c}. Upper limits for the production of strangelets at zero degree production angle covering a mass to charge ratio up to 120 GeV/{ital c}{sup 2} and lifetimes {ital t}{sub lab}{approx_gt}1.2 {mu}s are given. The data presented here were taken during the 1994 lead beam running period at CERN. {copyright} {ital 1996 The American Physical Society.}

  20. Magnetocrystalline Anisotropy in UMn2Ge2 and Related Mn-based Actinide Ferromagnets

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parker, David S; Mandrus, D.; Ghimire, N J; Baumbach, Ryan; Singleton, John; Thompson, J.D.; Bauer, Eric D.; Li, Ling; Singh, David J

    2015-01-01

    We present magnetization isotherms in pulsed magnetic fields up to 62 Tesla, supported by first principles calculations, demonstrating a huge uniaxial magnetocrystalline anisotropy energy - approximately 20 MJ/m3 - in UMn2Ge2. This large anisotropy results from the extremely strong spin-orbit coupling affecting the uranium 5 f electrons, which in the calculations exhibit a substantial orbital moment exceeding 2 Bohr magnetons. We also find from theoretical calculations that a number of isostructural Mn-actinide compounds are expected to have similarly large anisotropy.