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1

STATEMENT OF CONSIDERATIONS REQUEST BY FOSTER WHEELER FOR ADVANCE...  

Broader source: Energy.gov (indexed) [DOE]

and technological input to the CFB technology. Foster Wheeler USA Corporation: design, engineering and construction services. 1 O * Foster Wheeler Environmental Corporation:...

2

Development of Foster Wheeler's Vision 21 Partial Gasification Module  

SciTech Connect (OSTI)

The US Department of Energy (DOE) has awarded Foster Wheeler Development Corporation a contract to develop a partial gasification module (PGM) that represents a critical element of several potential coal-fired Vision 21 plants. When utilized for electrical power generation, these plants will operate with efficiencies greater than 60% while producing near zero emissions of traditional stack gas pollutants. The new process partially gasifies coal at elevated pressure producing a coal derived syngas and a char residue. The syngas can be used to fuel the most advanced power producing equipment such as solid oxide fuel cells or gas turbines or processed to produce clean liquid fuels or chemicals for industrial users. The char residue is not wasted; it can also be used to generate electricity by fueling boilers that drive the most advanced ultra-supercritical pressure steam turbines. The unique aspect of the process is that it utilizes a pressurized circulating fluidized bed partial gasifier and does not attempt to consume the coal in a single step. To convert all the coal to syngas in a single step requires extremely high temperatures ({approx} 2500 to 2800F) that melt and vaporize the coal and essentially drive all coal ash contaminants into the syngas. Since these contaminants can be corrosive to power generating equipment, the syngas must be cooled to near room temperature to enable a series of chemical processes to clean the syngas. Foster Wheeler's process operates at much lower temperatures that control/minimize the release of contaminants; this eliminates/minimizes the need for the expensive, complicated syngas heat exchangers and chemical cleanup systems typical of high temperature gasification. By performing the gasification in a circulating bed, a significant amount of syngas can still be produced despite the reduced temperature and the circulating bed allows easy scale up to large size plants. Rather than air, it can also operate with oxygen to facilitate sequestration of stack gas carbon dioxide gases for a 100% reduction in greenhouse gas emissions. The amount of syngas and char produced by the PGM can be tailored to fit the production objectives of the overall plant, i.e., power generation, clean liquid fuel production, chemicals production, etc. Hence, PGM is a robust building block that offers all the advantages of coal gasification but in a more user friendly form; it is also fuel flexible in that it can use alternative fuels such as biomass, sewerage sludge, etc. This paper describes the test program and pilot plant that will be used to develop the PGM.

Robertson, A.

2001-11-06T23:59:59.000Z

3

STATEMENT OF CONSIDERATIONS REQUEST BY FOSTER WHEELER FOR ADVANCE WAIVER OF  

Broader source: Energy.gov (indexed) [DOE]

FOSTER WHEELER FOR ADVANCE WAIVER OF FOSTER WHEELER FOR ADVANCE WAIVER OF WORLDWIDE RIGHTS IN SUBJECT INVENTIONS MADE IN THE COURSE OF OR UNDER A PROPOSED SUBCONTRACT UNDER COOPERATIVE AGREEMENT NO. DE-FC21-90MC27403 BETWEEN DOE AND JACKSONVILLE ELECTRIC AUTHORITY [DOE DOCKET NO. W(A)-97-028; ORO-669] The Department of Energy (DOE) and the Jacksonville Electric Authority (JEA) have entered into a novation agreement whereby JEA has become the signatory to and Participant: in Coopera- tive Agreement No. DE-FC21-90MC27403. The City of Tallahassee (COT) was the original Participant in this Cooperative Agreement based on a proposal submitted by COT under the Round 1 Clean Coal Technology (CCT) Program Opportunity Notice (PON). Foster Wheeler Power Systems is a proposed subcontractor and technology vendor under the cooperative

4

STATEMENT OF CONSIDERATIONS REQUEST BY FOSTER WHEELER, FOR AN ADVANCE WAIVER OF DOMESTIC AND  

Broader source: Energy.gov (indexed) [DOE]

9 9 STATEMENT OF CONSIDERATIONS REQUEST BY FOSTER WHEELER, FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS DOE COOPERATIVE AGREEMENT NO. DE-FC26- 03NT41865; W(A)-03-052, CH1169 The Petitioner, Foster Wheeler (FW), was awarded this cooperative agreement for the performance of work entitled, "Ammonia-Free NO, Control System." The purpose of the cooperative agreement is to achieve very low levels of NO, emissions from pulverized coal fired boiler systems by employing a novel system level integration between the PC combustion process and flue gas NOx reduction. Catalyst formulations successful in the automotive applications will be evaluated both analytically and empirically for their use in PC power plants. This knowledge, combined with prior catalyst research for power plant applications conducted at Lehigh University,

5

Type B Accident Investigation of the April 8, 2003, Electrical Arc Blast at the Foster Wheeler Environmental Corporation TRU Waste Processing Facility, Oak Ridge, Tennessee  

Broader source: Energy.gov [DOE]

At approximately 0330 hours on April 8, 2003, a phase-to-phase arc blast occurred in the boiler electrical control panel at the Foster Wheeler Environmental Corporation (FWENC) Transuranic (TRU) Waste Processing Facility. The boiler was providing steam for the evaporator and was reportedly operating at about 10% of its capacity.

6

Bryan Wheeler  

Broader source: Energy.gov [DOE]

Bryan Wheeler was an intern in the Energy Department’s Office of Science in the summer of 2011. He is currently a student at Johns Hopkins University

7

Curriculum Vitae Brooke Wheeler Brooke Wheeler  

E-Print Network [OSTI]

Curriculum Vitae Brooke Wheeler Brooke Wheeler Curriculum in Ecology, CB #3275 University of North. #12;Curriculum Vitae Brooke Wheeler Presentations: Wheeler, B., M. McKnight, G. Cumming, M. Mc@unc.edu Education University of North Carolina at Chapel Hill Graduate student in the Curriculum in Ecology Fall

Peet, Robert K.

8

Thomas Wheeler | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Description Departmental staffing budget; PMA scorecard; hiring metrics Last Name Wheeler First Name THomas Title Director, Workforce Analysis & Planning Division...

9

David Foster  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

David Foster About ESnet Our Mission The Network ESnet History Governance & Policies ESnet Policy Board Larry Smarr Jagdeep Singh Kristin Rauschenbach Cees de Laat David Foster...

10

Fostering the rebirth of natural history  

Science Journals Connector (OSTI)

...Hampton 1 * Terry A. Wheeler 2 * Author for correspondence...past the forensic study of natural history...detailed natural history studies, museum collections...access to natural systems by the general public...was designed to foster stimulating discourse...and environmental studies exploit a tiny fraction...

2012-01-01T23:59:59.000Z

11

Working at GE Global Research | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

> Why GE Why GE Fostering curiosity and work that makes a big impact on the world. That's how GE helps keep talented researchers motivated. Inspire For our scientists,...

12

STATEMENT OF CONSIDERATIONS REQUEST BY FOSTER WHEELER, FOR AN...  

Broader source: Energy.gov (indexed) [DOE]

agreement is to achieve very low levels of NO, emissions from pulverized coal fired boiler systems by employing a novel system level integration between the PC combustion...

13

Electric Two-Wheelers in China: Promise Progress and Potential  

E-Print Network [OSTI]

system. Nevertheless, electric two-wheelers in Westernand Eric Van Gelder. 2009. “Electric Bikes in the People’sand Luke Jones. 2010. “Electric Two-Wheelers in India and

Cherry, Christopher

2010-01-01T23:59:59.000Z

14

Update of waste fuel firing experience in Foster Wheeler circulating fluidized bed boilers  

SciTech Connect (OSTI)

As the costs and availability of more conventional fuels continue to escalate, more and more customers are investigating and choosing operation with lower cost waste or alternative fuels. Details of units firing waste or alternative fuels which have been in active service for many years are summarized, and the fuel analyses are given. This chapter gives a general overview of the projects that are or will be firing waste or alternative fuels, namely, the Mt. Carmel Manitowoc, NISCO and HUNOSA units. The experience of the four operating units has demonstrated that waste and alternative fuels can be successfully and economically burned in an atmosphere circulating fluidized bed unit while meeting permitted emission requirements.

Abdulally, I.F.; Reed, K.A.

1993-12-31T23:59:59.000Z

15

Fostering Growth | Department of Energy  

Office of Environmental Management (EM)

Fostering Growth Fostering Growth The solar energy industry in the United States is growing rapidly as the price of solar panels has decreased over the past decade. U.S. solar...

16

Joe Wheeler Elec Member Corp | Open Energy Information  

Open Energy Info (EERE)

Wheeler Elec Member Corp Wheeler Elec Member Corp Jump to: navigation, search Name Joe Wheeler Elec Member Corp Place Alabama Utility Id 9739 Utility Location Yes Ownership C NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] Energy Information Administration Form 826[2] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png GENERAL POWER RATE--SCHEDULE GSA: Last 12-months use over 1,000 kW Commercial GENERAL POWER RATE--SCHEDULE GSA: Last 12-months' use < 50 kW Commercial General Power Rate--Schedule SGSB Commercial General Power Rate--Schedule SGSC Industrial General Power Rate--Schedule SGSD Industrial

17

Geometric Burrows-Wheeler Transform: Linking Range Searching and Text Indexing (extended abstract)  

E-Print Network [OSTI]

We introduce a new variant of the popular Burrows-Wheeler transform (BWT) called Geometric Burrows-Wheeler Transform (GBWT). Unlike BWT, which merely permutes the text, GBWT converts the text into a set of points in ...

Chien, Yu-Feng; Hon, Wing-Kai; Shah, Rahul; Vitter, Jeffrey Scott

2008-01-01T23:59:59.000Z

18

Foster Wheeler’s Solutions for Large Scale CFB Boiler Technology: Features and Operational Performance of ?agisza 460 MWe CFB Boiler  

Science Journals Connector (OSTI)

During recent years, once-through supercritical (OTSC) CFB technology has been developed, enabling the CFB technology to proceed to medium-scale (500 ... very good performance and confirms, that the CFB process h...

Arto Hotta

2010-01-01T23:59:59.000Z

19

Jordan Thayer and Wheeler Ruml (UNH) Suboptimal Search 1 / 28 A Survey of Suboptimal Search Algorithms  

E-Print Network [OSTI]

Jordan Thayer and Wheeler Ruml (UNH) Suboptimal Search ­ 1 / 28 A Survey of Suboptimal Search Algorithms Jordan T. Thayer and Wheeler Ruml jtd7, ruml at cs.unh.edu slides at: http://www.cs.unh.edu/~jtd7 s Outline s Not Discussed Suboptimal Bounded Suboptimal Anytime Search Summary Jordan Thayer and Wheeler

Ruml, Wheeler

20

e-mail: psharma@uh.edu L. T. Wheeler  

E-Print Network [OSTI]

P. Sharma e-mail: psharma@uh.edu L. T. Wheeler Department of Mechanical Engineering, University work, both with and without modifications, has been employed to tackle a diverse set of prob- lems: Localized thermal heating, residual strains, dislocation- induced plastic strains, phase transformations

Sharma, Pradeep

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Institutional Change Principles for Fostering Sustainability...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Principles for Fostering Sustainability Institutional Change Principles for Fostering Sustainability The following eight principles serve as the foundational building blocks for...

22

Wheeler, New York: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Wheeler, New York: Energy Resources Wheeler, New York: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 42.4303485°, -77.3324807° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.4303485,"lon":-77.3324807,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

23

DEAN PHILLIPS FOSTER The Wharton School  

E-Print Network [OSTI]

international school," with David Foster, to appear Reading Psychol- ogy, 2013. "Stochastic convex optimization

Foster, Dean P.

24

The Everett-Wheeler interpretation and the open future  

SciTech Connect (OSTI)

I discuss the meaning of probability in the Everett-Wheeler interpretation of quantum mechanics, together with the problem of defining histories. To resolve these, I propose an understanding of probability arising from a form of temporal logic: the probability of a future-tense proposition is identified with its truth value in a many-valued and context-dependent logic. In short, probability is degree of truth. These ideas relate to traditional naive ideas of time and chance. Indeed, I argue that Everettian quantum mechanics is the only form of scientific theory that truly incorporates the perception that the future is open.

Sudbery, Anthony [Department of Mathematics, University of York, Heslington, York, YO10 5DD (United Kingdom)

2011-03-28T23:59:59.000Z

25

Fostering the Next Generation of Nuclear Energy Technology |...  

Office of Environmental Management (EM)

Fostering the Next Generation of Nuclear Energy Technology Fostering the Next Generation of Nuclear Energy Technology September 29, 2014 - 11:06am Addthis Fostering the Next...

26

Rebekah Foster-Terry Oral History  

E-Print Network [OSTI]

Oral history interview with Reverend Rebekah Foster-Terry conducted by Stephanie Meador in 2009. In this interview, Rev. Foster-Terry, pastor of the Victory Tabernacle Church in Topeka, Kansas, discusses the history of the ...

Foster-Terry, Rebekah; Meador, Stephanie Rae

2009-01-01T23:59:59.000Z

27

Wheeler, Conrad, and Figliozzi 1 A Statistical Analysis of Bicycle Rider Performance  

E-Print Network [OSTI]

Wheeler, Conrad, and Figliozzi 1 A Statistical Analysis of Bicycle Rider Performance: The impact) A Statistical Analysis of Bicycle Rider Performance: The impact of gender on riders' performance at signalized;Wheeler, Conrad, and Figliozzi 2 A Statistical Analysis of Bicycle Rider Performance: The impact of gender

Bertini, Robert L.

28

Jordan Thayer and Wheeler Ruml (UNH) Distance Estimates For Search 1 / 40 Using Distance Estimates In Heuristic Search  

E-Print Network [OSTI]

Jordan Thayer and Wheeler Ruml (UNH) Distance Estimates For Search ­ 1 / 40 Using Distance Estimates In Heuristic Search Jordan T. Thayer and Wheeler Ruml jtd7, ruml at cs.unh.edu slides at: http Search Bounded Suboptimal Anytime Search Summary Backup Slides Jordan Thayer and Wheeler Ruml (UNH

Ruml, Wheeler

29

Mt Wheeler Power, Inc (Utah) | Open Energy Information  

Open Energy Info (EERE)

Utah Utah Utility Id 13073 References Energy Information Administration.[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Residential: $0.0786/kWh Commercial: $0.0810/kWh Industrial: $0.0610/kWh The following table contains monthly sales and revenue data for Mt Wheeler Power, Inc (Utah). Month RES REV (THOUSAND $) RES SALES (MWH) RES CONS COM REV (THOUSAND $) COM SALES (MWH) COM CONS IND_REV (THOUSAND $) IND SALES (MWH) IND CONS OTH REV (THOUSAND $) OTH SALES (MWH) OTH CONS TOT REV (THOUSAND $) TOT SALES (MWH) TOT CONS 2009-03 11.289 138.131 203 9.256 101.356 114 1.61 12.38 14 22.155 251.867 331

30

Katherine Wheeler Mathews WVERYOR ARNOLD SCHWARZENEGGER ?he Honorable Steven Chu  

Broader source: Energy.gov (indexed) [DOE]

Feb 27 09 08:08p Feb 27 09 08:08p Katherine Wheeler Mathews WVERYOR ARNOLD SCHWARZENEGGER ?he Honorable Steven Chu Secretary of Energy 1000 Independence Avenue, SW Washington, DC 20585 Re: S m Enerav P r o m Assurances Dear M r . Secretary, As a condition of receiving California's share of the $3.1 billion in funding for the Stare Edergy Program (SEP) under the American Recovery and Reinvestment Act of 2009 (I3.R. 1) (ARRA). I am providing the folbwing assurances The California Public Utilities Commission bas set in place policies and procedures b promote energy efficiency. consistent with the federal statutory language conrained in H.R. 1 and their obligations to maintain just and reasonable rates, while protecting the public. California has residential aod curnrnercial building codes in place t

31

The future of electric two-wheelers and electric vehicles in China  

E-Print Network [OSTI]

2001. Life cycle assessment of electric bike application inSystems. Cherry, C. , 2007. Electric Two-Wheelers in China:2007. 2006 Analysis of Electric Bike Market (2006 China

Weinert, Jonathan X.; Ogden, Joan M.; Sperling, Dan; Burke, Andy

2008-01-01T23:59:59.000Z

32

GIZ Sourcebook Module 4c: Two and Three Wheelers | Open Energy...  

Open Energy Info (EERE)

of the developing world. The consideration of two- and three-wheelers is divided into two broad categories: transport system issues in cities with high shares of passenger trips...

33

Ian T. Foster | Argonne National Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ian T. Foster Ian T. Foster Director of the Computation Institute & Argonne Distinguished Fellow Ian Foster is Director of the Computation Institute, a joint institute of the University of Chicago and Argonne National Laboratory. He is also an Argonne Senior Scientist and Distinguished Fellow and the Arthur Holly Compton Distinguished Service Professor of Computer Science. Methods and software developed under his leadership underpin many large national and international cyberinfrastructures. Foster's awards include the Global Information Infrastructure (GII) Next Generation award, the British Computer Society's Lovelace Medal, R&D Magazine's Innovator of the Year, and an honorary doctorate from the University of Canterbury, New Zealand. He is a Fellow of the American

34

Foster Care Independent Living Services: Youth Perspectives  

E-Print Network [OSTI]

Emerging adulthood is a phase in the life course recently identified by developmental theorists. For youth in foster care, recent federal legislation in the United States has engendered new programs, typically called ...

Petr, Christopher G.

2008-01-01T23:59:59.000Z

35

Institutional Change Principles for Fostering Sustainability | Department  

Broader source: Energy.gov (indexed) [DOE]

Institutional Change Principles for Fostering Sustainability Institutional Change Principles for Fostering Sustainability Institutional Change Principles for Fostering Sustainability October 8, 2013 - 10:57am Addthis The following eight principles serve as the foundational building blocks for developing strategies to achieve institutional change-but they are not the strategies themselves. They are derived from academic literature and inform the framework for achieving institutional change in a Federal organization. Each statement is followed by a general strategy for how the principle can be translated into action. Social Network and Communications: Institutions and people change because they see or hear of others (individuals, groups, institutions, firms) behaving differently, so make sure staff see or hear about others who have

36

Wheeler Hot Springs Pool & Spa Low Temperature Geothermal Facility | Open  

Open Energy Info (EERE)

Hot Springs Pool & Spa Low Temperature Geothermal Facility Hot Springs Pool & Spa Low Temperature Geothermal Facility Jump to: navigation, search Name Wheeler Hot Springs Pool & Spa Low Temperature Geothermal Facility Facility Wheeler Hot Springs Sector Geothermal energy Type Pool and Spa Location Ojai, California Coordinates 34.4480495°, -119.242889° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[]}

37

The Wheeler - DeWitt Quantum Geometrodynamics: its fundamental problems and tendencies of their resolution  

E-Print Network [OSTI]

The paper is devoted to fundamental problems of the Wheeler - DeWitt quantum geometrodynamics, which was the first attempt to apply quantum principles to the Universe as a whole. Our purpose is to find out the origin of these problems and follow up their consequences. We start from Dirac generalized Hamiltonian dynamics as a cornerstone on which the Wheeler - DeWitt theory is based. We remind the main statements of the famous DeWitt's paper of 1967 and discuss the flaws of the theory: the well-known problem of time, the problem of Hilbert space and others. In the concluding part of the paper we consider new tendencies and approaches to quantum geometrodynamics appeared in the last decade.

T. P. Shestakova

2008-01-31T23:59:59.000Z

38

Schrödinger-Wheeler-DeWitt equation in chaplygin gas FRW cosmological model  

E-Print Network [OSTI]

We present a chaplygin gas Friedmann-Robertson-Walker quantum cosmological model. In this work the Schutz's variational formalism is applied with positive, negative, and zero constant spatial curvature. In this approach the notion of time can be recovered. These give rise to Schr\\"odinger-Wheeler-DeWitt equation for the scale factor. We use the eigenfunctions in order to construct wave packets for each case. We study the time dependent behavior of the expectation value of the scale factor, using the many-worlds interpretations of quantum mechanics.

P. Pedram; S. Jalalzadeh; S. S. Gousheh

2007-05-24T23:59:59.000Z

39

Mary Ann Fresco receives OPM award for creating, fostering inclusive...  

National Nuclear Security Administration (NNSA)

receives OPM award for creating, fostering inclusive diversity Mary Ann Fresco, Senior Advisor to NNSA's Management and Business Office (NA-MB), was recently recognized by the...

40

NREL: Continuum Magazine - Finding New Ways to Foster Clean Energy...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of working with industry partners to enhance the integration of wind into our nation's energy mix. Photo by Pat Corkery, NREL Finding New Ways to Foster Clean Energy...

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Inaugural C3E Symposium Fosters Collaborative Discussions and Celebrates  

Broader source: Energy.gov (indexed) [DOE]

Inaugural C3E Symposium Fosters Collaborative Discussions and Inaugural C3E Symposium Fosters Collaborative Discussions and Celebrates Achievements Inaugural C3E Symposium Fosters Collaborative Discussions and Celebrates Achievements November 20, 2012 - 12:57pm Addthis Inaugural C3E Symposium Fosters Collaborative Discussions and Celebrates Achievements Caroline McGregor Policy Analyst, Office of Policy and International Affairs Editor's note: This was originally posted in the Clean Energy MInisterial's Fall 2012 newsletter. In September, the U.S. Department of Energy and the Massachusetts Institute of Technology (MIT) Energy Initiative co-hosted the inaugural Women in Clean Energy Symposium. Convened in support of U.S. efforts under the Clean Energy Education & Empowerment (C3E) initiative, the event brought together

42

Sandia collects gifts for foster children | National Nuclear Security  

National Nuclear Security Administration (NNSA)

collects gifts for foster children | National Nuclear Security collects gifts for foster children | National Nuclear Security Administration Our Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Continuing Management Reform Countering Nuclear Terrorism About Us Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Media Room Congressional Testimony Fact Sheets Newsletters Press Releases Speeches Events Social Media Video Gallery Photo Gallery NNSA Archive Federal Employment Apply for Our Jobs Our Jobs Working at NNSA Blog Home > NNSA Blog > Sandia collects gifts for foster children Sandia collects gifts for foster children Posted By Office of Public Affairs Employees at Sandia National Laboratories collected enough gifts for more

43

OECD-Fostering Innovation for Green Growth | Open Energy Information  

Open Energy Info (EERE)

OECD-Fostering Innovation for Green Growth OECD-Fostering Innovation for Green Growth Jump to: navigation, search Tool Summary LAUNCH TOOL Name: OECD-Fostering Innovation for Green Growth Agency/Company /Organization: Organisation for Economic Co-Operation and Development (OECD) Sector: Climate, Energy Focus Area: Renewable Energy, Non-renewable Energy Topics: Low emission development planning, Technology characterizations Resource Type: Publications, Technical report Website: www.oecd.org/document/3/0,3746,en_2649_37465_48593219_1_1_1_37465,00.h Cost: Free Language: English "This book draws on work from across several parts of the OECD and explores policy actions for the deployment of new technologies and innovations as they emerge: investment in research and development, support for commercialisation, strengthening markets and fostering technology

44

Tools to foster a global federation of testbeds Jordan Augea,  

E-Print Network [OSTI]

Tools to foster a global federation of testbeds Jordan Aug´ea, , Thierry Parmentelatb , Nicolas: jordan.auge@lip6.fr (Jordan Aug´e), thierry.parmentelat@inria.fr (Thierry Parmentelat), nicolas

Paris-Sud XI, Université de

45

Watershed Governance as a vehicle for fostering social, ecological and  

E-Print Network [OSTI]

Watershed Governance as a vehicle for fostering social, ecological units; social-ecological systems; units of natural resource management, administration"... à `Ecological'? but where are the Ecosystems? #12; How to reflect watershed, health

Northern British Columbia, University of

46

Transdisciplinary Collaboration and Lifelong Learning: Fostering and Supporting New  

E-Print Network [OSTI]

Transdisciplinary Collaboration and Lifelong Learning: Fostering and Supporting New Learning societies rethink and reinvent learning, teaching, working, and collaboration. A first basic challenge transdisciplinary collaboration that fo- cuses on opportunities for knowledge workers to work in teams, commu

Fischer, Gerhard

47

Building | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Scientists at GE Global Research get into the holiday spirit by bringing high-tech additive manufacturing techniques to Christmas... Read More Global Research and GE...

48

GE Research and Development | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a decade of innovation Closing the Culture Gap Between Academia and Industry Additive Manufacturing Demonstration at GE Global Research innovate Latest News U.S....

49

Federal Task Force Sends Recommendations to President on Fostering Clean  

Broader source: Energy.gov (indexed) [DOE]

Federal Task Force Sends Recommendations to President on Fostering Federal Task Force Sends Recommendations to President on Fostering Clean Coal Technology Federal Task Force Sends Recommendations to President on Fostering Clean Coal Technology August 12, 2010 - 1:00pm Addthis Washington, DC - President Obama's Interagency Task Force on Carbon Capture and Storage (CCS), co-chaired by the U.S. Environmental Protection Agency (EPA) and the Department of Energy (DOE), delivered a series of recommendations to the president today on overcoming the barriers to the widespread, cost-effective deployment of CCS within 10 years. CCS is a group of technologies for capturing, compressing, transporting and permanently storing power plant and industrial source emissions of carbon dioxide. Rapid development and deployment of clean coal technologies,

50

Fostering a New Generation of Geothermal Workers | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Fostering a New Generation of Geothermal Workers Fostering a New Generation of Geothermal Workers Fostering a New Generation of Geothermal Workers October 5, 2010 - 4:31pm Addthis Andy Oare Andy Oare Former New Media Strategist, Office of Public Affairs Editor's Note: The Registration Deadline has been extended to November 12th. If there's one thing that absolutely must be in place to build a robust clean energy economy, it's a robust and well-trained clean energy workforce. Think about it - we're doing something here that we've never really done before, at least not to this scale. It's one thing to install solar panels on top of large building complexes and in huge fields - but how about every home in America? And if we're really going to use electric vehicles to the scale that David Sandalow talked about yesterday,

51

Federal Task Force Sends Recommendations to President on Fostering Clean  

Broader source: Energy.gov (indexed) [DOE]

Task Force Sends Recommendations to President on Fostering Task Force Sends Recommendations to President on Fostering Clean Coal Technology Federal Task Force Sends Recommendations to President on Fostering Clean Coal Technology August 12, 2010 - 12:00am Addthis WASHINGTON - President Obama's Interagency Task Force on Carbon Capture and Storage (CCS), co-chaired by the U.S. Environmental Protection Agency (EPA) and the Department of Energy (DOE), delivered a series of recommendations to the president today on overcoming the barriers to the widespread, cost-effective deployment of CCS within 10 years. CCS is a group of technologies for capturing, compressing, transporting and permanently storing power plant and industrial source emissions of carbon dioxide. Rapid development and deployment of clean coal technologies, particularly

52

EM Supports Program that Fosters Region's Safety Culture | Department of  

Broader source: Energy.gov (indexed) [DOE]

EM Supports Program that Fosters Region's Safety Culture EM Supports Program that Fosters Region's Safety Culture EM Supports Program that Fosters Region's Safety Culture September 10, 2013 - 12:00pm Addthis Participants in Safety Fest Tennessee receive a hands-on demonstration about electrical safety. Participants in Safety Fest Tennessee receive a hands-on demonstration about electrical safety. This year’s event offers 40 safety courses. Participants discuss relevant safety issues and best practices. This year's event offers 40 safety courses. Participants discuss relevant safety issues and best practices. Participants in Safety Fest Tennessee receive a hands-on demonstration about electrical safety. This year's event offers 40 safety courses. Participants discuss relevant safety issues and best practices.

53

EM Supports Program that Fosters Region's Safety Culture | Department of  

Broader source: Energy.gov (indexed) [DOE]

EM Supports Program that Fosters Region's Safety Culture EM Supports Program that Fosters Region's Safety Culture EM Supports Program that Fosters Region's Safety Culture September 10, 2013 - 12:00pm Addthis Participants in Safety Fest Tennessee receive a hands-on demonstration about electrical safety. Participants in Safety Fest Tennessee receive a hands-on demonstration about electrical safety. This year’s event offers 40 safety courses. Participants discuss relevant safety issues and best practices. This year's event offers 40 safety courses. Participants discuss relevant safety issues and best practices. Participants in Safety Fest Tennessee receive a hands-on demonstration about electrical safety. This year's event offers 40 safety courses. Participants discuss relevant safety issues and best practices.

54

Online Toolkit Fosters Bioenergy Innovation | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Toolkit Fosters Bioenergy Innovation Toolkit Fosters Bioenergy Innovation Online Toolkit Fosters Bioenergy Innovation January 21, 2011 - 2:27pm Addthis Learn more about the Bioenergy Knowledge Discovery Framework, an online data sharing and mapping toolkit. Paul Bryan Biomass Program Manager, Office of Energy Efficiency & Renewable Energy What will the project do? The $241 million loan guarantee for Diamond Green Diesel, funding which will support the construction of a facility that will nearly triple the amount of renewable diesel produced domestically. The online data sharing and mapping toolkit provides the extensive data, analysis, and visualization tools to monitor the bioenergy industry. Yesterday, Secretary Chu announced a $241 million loan guarantee for Diamond Green Diesel, funding which will support the construction of a

55

6.3.2 Ge spinels and substituted Ge spinels  

Science Journals Connector (OSTI)

Al-Ge-Li-O: LiGeAlO4 (Sp). Co-Ga-Ge-O: Co1+xGa2-2xGexO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-xMgxGeO4 (Sp). Co-Ge-Ni-O: CoNiGeO4 (Sp). Co-Ge-O-Zn: Co2-xZnxGeO4 (Sp). Co-Ge-O: C...

D. Bonnenberg; H.P.J. Wijn

1970-01-01T23:59:59.000Z

56

Chevron, GE form Technology Alliance  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical...

57

Curing | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

this paper-based instrument, the size of a deck of playing cards, enables... Read More Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

58

GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

geglobalresearch.com Fri, 30 Jan 2015 17:46:29 +0000 en-US hourly 1 GE Researcher: Putting GE Beliefs into Action http:www.geglobalresearch.comblogcutting-edge-technology-peopl...

59

GE Healthcare Antibody Purification  

E-Print Network [OSTI]

.....................................................................................................................4 Chapter 3. Small-scale purification by affinity chromatography......................43 GeneralGE Healthcare Antibody Purification Handbook GE Healthcare imagination at work agination at work Purification Handbook Principles and Methods 18-1142-75 Isolation of mononuclear cells Methodology

Lebendiker, Mario

60

The SEREBRO Project: Fostering Creativity through Collaboration and Rewards  

E-Print Network [OSTI]

creative approaches to Software Engineering, focusing on technolog- ical solutions rather than innovativeThe SEREBRO Project: Fostering Creativity through Collaboration and Rewards Rose Gamble gamble Tucker Drive Tulsa, OK 74104 Jordan Hughes jordan- hughes@utulsa.edu ABSTRACT Software Engineering

Gamble, R. F.

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Applying a Pragmatics-Based Creativity-Fostering Technique to  

E-Print Network [OSTI]

Engineering and Creativity: An Innovative Approach Based on a Model of the Pragmatics of 1 #12;Applying EPMcreate (EPM Creative Requirements Engineering TEchnique) that consists of sixteen steps. In each step to foster creativity in requirements engineering are still under-appreciated [7] and under

Berry, Daniel M.

62

MANAGING INSECT PESTS OF POTATO Ricky E. Foster, Extension Entomologist  

E-Print Network [OSTI]

MANAGING INSECT PESTS OF POTATO Ricky E. Foster, Extension Entomologist Department of Entomology Vegetable Insects E-96-W PURDUE EXTENSION Colorado potato beetle (l) larva and (r) adult (Photo Credit: J. Obermeyer) Potatoes can be attacked from the time seed pieces go into the ground until they are harvested

Ginzel, Matthew

63

A SOMETIMES FUNNY BOOK SUPPOSEDLY ABOUT A review of Everything and More, by David Foster Wallace  

E-Print Network [OSTI]

A SOMETIMES FUNNY BOOK SUPPOSEDLY ABOUT INFINITY A review of Everything and More, by David Foster to the title of David Foster Wallace's 1996 novel. On everybody's 10-best list, qualified as "world

Harris, Michael - Institut de Mathématiques de Jussieu, Université Paris 7

64

GE and Quirky | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a partnership that introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to...

65

Familjehemsvård - En studie om kontakten mellan familjehem och handläggare på socialtjänsten; Foster care – a study about the contact between foster homes and socialworkers.  

E-Print Network [OSTI]

?? The aim of this study was to understand the contact between foster homes and social workers, by doing a comparison of the social workers… (more)

Petersson, Josefin

2013-01-01T23:59:59.000Z

66

Foster City, California: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Foster City, California: Energy Resources Foster City, California: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 37.5585465°, -122.2710788° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.5585465,"lon":-122.2710788,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

67

Microsoft Word - Delrio_ChiefJo_FosterCreek_CX.docx  

Broader source: Energy.gov (indexed) [DOE]

6, 2012 6, 2012 REPLY TO ATTN OF: KEC-4 SUBJECT: Environmental Clearance Memorandum Ben Deschuytter Project Manager -TEP-CSB-1 Proposed Action: D Analog Communications Retirement at Del Rio, Chief Joseph, and Foster Creek Categorical Exclusion Applied (from Subpart D, 10 C.F.R. Part 1021): B1.19 Microwave, meteorological, and radio towers Location: Douglas County, Washington Proposed by: Bonneville Power Administration (BPA) Description of the Proposed Action: BPA proposes to upgrade communication equipment at three existing facilities in Douglas County, Washington. The work would occur at two of BPA's substations, Del Rio and Chief Joseph, and at BPA's Foster Creek radio site. Activities at these sites are in connection with the retirement of BPA's D analog communication system. At Del Rio, activities would

68

Powering | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers.... Read More Brilliant(tm) Wind...

69

Predix | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

developed over the last three years and was first announced publicly at GE's Minds+Machines conference in Chicago, Illinois, in October 2013. Predix enables asset and operations...

70

GE, Sandia National Lab Improve Wind Turbines | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines Use of...

71

Chevron, GE form Technology Alliance  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE...

72

Carousolar | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Fun Carousolar Uses Solar Power for Fun This amazing all-white carousel is powered by 100 solar panels and lit up by GE's colorful TETRA Countour LED lights. You Might Also Like...

73

A silent and significant subgroup : closing the achievement gap for students in foster care  

E-Print Network [OSTI]

Office of the Courts (AOC) enacted new Rules of Court thatand youth in foster care. The AOC is the staff agency of the

Lustig, Michelle Lisa

2008-01-01T23:59:59.000Z

74

Everything and More: A Compact History of Infinity David Foster Wallace  

E-Print Network [OSTI]

Everything and More: A Compact History of Infinity David Foster Wallace November 2004 / paperback / ISBN 0-393-32629-2 / 336 pages /$14.95 2003 / cloth / ISBN 0-393-00338-8 / 320 pages / $23.95 David Foster Wallace is a high-profile American writer, important some would say. I confess, I'm a Wallace fan

Luke, D. Russell

75

Fostering Collaboration at the University of Washington Report date: September 2012  

E-Print Network [OSTI]

Fostering Collaboration at the University of Washington Report date: September 2012 Learn more: http://www.washington.edu/2y2d/fostering-collaboration/ 1 Quick Facts on Collaboration · Our 286 research centers and collaborations with more than 100 state, federal, industry, and international partners

Van Volkenburgh, Elizabeth

76

Ge-Au eutectic bonding of Ge {100} single crystals  

Science Journals Connector (OSTI)

We present preliminary results on the eutectic bonding between two {100} Ge single crystal surfaces using thin films of ... Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity...

W. B. Knowlton; K. M. Itoh; J. W. Beeman; J. H. Emes…

1993-11-01T23:59:59.000Z

77

Colon Cancer Mapping | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt University has partnered with GE Global...

78

GE | OpenEI Community  

Open Energy Info (EERE)

by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

79

West Foster Creek Expansion Project 2007 HEP Report.  

SciTech Connect (OSTI)

During April and May 2007, the Columbia Basin Fish and Wildlife Authority's (CBFWA) Regional HEP Team (RHT) conducted baseline Habitat Evaluation Procedures (HEP) (USFWS 1980, 1980a) analyses on five parcels collectively designated the West Foster Creek Expansion Project (3,756.48 acres). The purpose of the HEP analyses was to document extant habitat conditions and to determine how many baseline/protection habitat units (HUs) to credit Bonneville Power Administration (BPA) for funding maintenance and enhancement activities on project lands as partial mitigation for habitat losses associated with construction of Grand Coulee and Chief Joseph Dams. HEP evaluation models included mule deer (Odocoileus hemionus), western meadowlark (Sturnella neglecta), sharp-tailed grouse, (Tympanuchus phasianellus), Bobcat (Lynx rufus), mink (Neovison vison), mallard (Anas platyrhynchos), and black-capped chickadee (Parus atricapillus). Combined 2007 baseline HEP results show that 4,946.44 habitat units were generated on 3,756.48 acres (1.32 HUs per acre). HEP results/habitat conditions were generally similar for like cover types at all sites. Unlike crediting of habitat units (HUs) on other WDFW owned lands, Bonneville Power Administration received full credit for HUs generated on these sites.

Ashley, Paul R.

2008-02-01T23:59:59.000Z

80

(La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of (La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2 representing the structure type (La0.30Ge0.70)(Ni0.85Ge0.15)2Ge2.

P. Villars; K. Cenzual; J. Daams…

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

NIMBioS: a National Institute fostering Research and Education at the  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NIMBioS: a National Institute fostering Research and Education at the NIMBioS: a National Institute fostering Research and Education at the interface of Mathematics and Biology Louis J. Gross University of Tennessee Abstract A unique collaboration of federal agencies is sponsoring a national center that is fostering new research that applies mathematics and computational science to diverse problems in the life sciences. The National Science Foundation, US Department of Homeland Security and US Department of Agriculture are formal sponsoring agencies, with additional support from the National Center for Medical Intelligence. I will describe the variety of methods used at NIMBioS to foster interdisciplinary research to address fundamental as well as applied questions in biology, with a particular focus on efforts in animal infectious diseases. Research activities at

82

The Meaning of Quality in Kinship Foster Care: Caregiver, Child, and Worker Perspectives  

E-Print Network [OSTI]

Though principles, guidelines, and procedures for assessing the quality of foster care in kinship settings have been introduced, research on the factors that mediate the quality and outcome of kinship care has been ...

Chipman, Robert; Wells, Susan J.; Johnson, Michelle A.

2002-01-01T23:59:59.000Z

83

From idea to implementation : fostering creativity and design maturity in novices  

E-Print Network [OSTI]

This thesis explores how novices, in particular students, design products for people and how to foster creativity in students who are accustomed to a traditional engineering curriculum. In a world of messy, ill-definied ...

Lai, Justin Yi-Shen

2009-01-01T23:59:59.000Z

84

William Higgins at the Dublin Society, 1810–20: the loss of a professorship and a claim to the atomic theory  

Science Journals Connector (OSTI)

...for further study. 60 In spite...wrote to John Foster (1740-1828...as well. Wheeler and Partington...Dalton, A New System of Chemical...2 T. S. Wheeler and J. R...15-17. 7 John Foster to Humphry...1812-1818?), Studies 43, 441-450...270. 103 Wheeler and Partington...President John Foster of the Dublin...

2010-01-01T23:59:59.000Z

85

Termination of service by foster homes in a child-placing agency : a review of one hundred closed foster homes of the Children's Aid Society of Vancouver, B.C.  

E-Print Network [OSTI]

??Issues in foster home recruitment and maintenance in a child-placing agency are considered in this thesis. References are made to literature about the historical development… (more)

Anderson, Mamie Sybil

2012-01-01T23:59:59.000Z

86

John S. Foster, 1992 | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

John S. Foster, 1992 John S. Foster, 1992 The Enrico Fermi Award Fermi Award Home Nomination & Selection Guidelines Award Laureates 2010's 2000's 1990's 1980's 1970's 1960's 1950's Ceremony The Life of Enrico Fermi Contact Information The Enrico Fermi Award U.S. Department of Energy SC-2/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-9395 E: fermi.award@science.doe.gov 1990's John S. Foster, 1992 Print Text Size: A A A RSS Feeds FeedbackShare Page Citation For his outstanding contributions to national security, in technical leadership in the development of nuclear weapons, in leadership of Lawrence Livermore National Laboratory in its formative years, in technical leadership in the defense industry; and for excellent service and continued counsel to the government

87

Natural Gas Locomotive | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

government. GE engineers are currently testing a fuel mixture that is 80% LNG, and 20% diesel using existing engine hardware. GE engineers continue to address several challenges...

88

New Medical Technology | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of care and expanding medical treatment boundaries. Home > Innovation > Healthcare Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

89

Hospital Sterile Processing | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Researches Use of Robots for Hospital Sterile Processing GE Researches Use of Robots for Hospital Sterile Processing GE principal investigator Lynn DeRose discusses the robotic...

90

Oil & Gas Technology Center | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Global Research Oil & Gas Technology Center GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology officer for GE, and Eric Gebhardt, vice president...

91

GE Innovation and Manufacturing in Europe | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Wins Award 1-2-38-v-software-reliability-engineering A Stochastic Process-Based Look at Software Reliability 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

92

GE Global Research Europe, Munich, Germany | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Visit the Careers...

93

4.3.2 Ge spinels and Ge spinels with substitutions  

Science Journals Connector (OSTI)

Al-Ge-Li-O-Zn: Li5Al5Zn8Ge9O36 (Sp). Al-Ge-Li-O: Li0.5+0.5xGexAl2.5-1.5xO4 (Sp). Al-Ge-O-Zn: Zn2GeO4: Al (Sp). Co-Fe-Ge-O: Co2-2xFe2xGeO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-x

D. Bonnenberg; K. A. Hempel

1980-01-01T23:59:59.000Z

94

MEMS Relays | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MEMS Technology 2-1-7-v-metal-mems-devices MEMS: Inside the Global Research Cleanroom 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate...

95

Laser Additive Manufacturing in GE  

Science Journals Connector (OSTI)

There has been an increasing interest given to laser additive manufacturing (LAM) in recent years from across the global. GE has been one of the leading industries engaging in this...

Peng, Henry; Li, Yanmin; Guo, Rui; Wu, Zhiwei

96

GE computer move in Japan  

Science Journals Connector (OSTI)

GE computer move in Japan ... General Electric is moving ahead with plans to set up a joint computer venture in Japan with Tokyo Shibaura Electric (Toshiba) and Mitsubishi Electric. ... Later, possibly in about three years, it will manufacture in Japan. ...

1967-02-06T23:59:59.000Z

97

Berkeley Center for Green Chemistry Newsletter First mobile app for green chemistry fosters sustainable manufacturing of  

E-Print Network [OSTI]

Berkeley Center for Green Chemistry Newsletter First mobile app for green chemistry fosters of the environmentally friendly and sustainable principles of green chemistry -- is the topic of a report in the American on doing so for solvents, key ingredients in processes for making medicines. Some traditional processes

Silver, Whendee

98

Job Title Licensed Professional Counselor Foster Care & Adoption Home-Based Services  

E-Print Network [OSTI]

through an array of evidence-based modalities and individuals programs. OUR BELIEF SELIM and its clinical. Collaborate with contracting foster care and adoption agency staff in the development and implementation and copies of treatment progress notes to QA department and as requested. Perform other assignments

Azevedo, Ricardo

99

Growing Green As part of its strategic plan to foster growth and development in key  

E-Print Network [OSTI]

to sustainable business development and corporate ethics, and helps companies embrace fiscal as well as greenGrowing Green As part of its strategic plan to foster growth and development in key areas related to energy and the environment, Western University has created the Centre for Environmental Sustainability

Denham, Graham

100

A Security Architecture for Computational Grids* Ian Foster* Carl Kessekan2 Gene Tsudik2 Steven Tueckel  

E-Print Network [OSTI]

A Security Architecture for Computational Grids* Ian Foster* Carl Kessekan2 Gene Tsudik2 Steven (grid) computing and develops a security policy and a corresponding security architecture. An implemen to apphcation execution. Fmdy, the interdomaiu security solutions used for grids must be able to irtteroperate

Lee, Ruby B.

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Modeling the Motion of a Hot, Turbulent Gas Nick Foster and Dimitris Metaxas  

E-Print Network [OSTI]

Modeling the Motion of a Hot, Turbulent Gas Nick Foster and Dimitris Metaxas Center for Human model gas motion due to fans and heat convection. The method combines specialized forms of the equations: Animation, Convection, Gaseous Phenomena, Gas Simulations, Physics-Based Modeling, Steam, Smoke, Turbulent

Frey, Pascal

102

An Investigation of the Informed Consent Being Rendered Under PL 94-142 on Behalf of Handicapped Children in Foster Care  

E-Print Network [OSTI]

The purpose of this investigation was to examine the level of accuracy and agreement of social worker and foster parent representatives of handicapped foster children with respect to their understanding of eight Local ...

McNally, Jane P.

1981-07-01T23:59:59.000Z

103

AGRARIAN LANDSCAPES IN TRANSITION: Charles L. Redman, David R. Foster, Myron P. Gutmann, Peter M. Kareiva, Ann P. Kinzig, and Lauren H. Kuby  

E-Print Network [OSTI]

Forest David Foster John O'Keefe Coweeta Ted Gragson Paul Bolstad Kellogg Alan Rudy Craig Harris Konza

Hall, Sharon J.

104

Kinetic study of GeO disproportionation into a GeO{sub 2}/Ge system using x-ray photoelectron spectroscopy  

SciTech Connect (OSTI)

GeO disproportionation into GeO{sub 2} and Ge is studied through x-ray photoelectron spectroscopy. Direct evidence for the reaction 2GeO {yields} GeO{sub 2} + Ge after annealing in ultra-high vacuum is presented. Activation energy for GeO disproportionation is found to be about 0.7 {+-} 0.2 eV through kinetic and thermodynamic calculations. A kinetic model of GeO disproportionation is established by considering oxygen transfer in the GeO network. The relationship between GeO disproportionation and GeO desorption induced by GeO{sub 2}/Ge interfacial reaction is discussed, and the apparent contradiction between GeO desorption via interfacial redox reaction and GeO disproportionation into Ge and GeO{sub 2} is explained by considering the oxygen vacancy.

Wang Shengkai [Micorowave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Liu Honggang [Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Toriumi, Akira [Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2012-08-06T23:59:59.000Z

105

GE PowerPoint Template  

Broader source: Energy.gov (indexed) [DOE]

Steels for Steels for Accident Tolera nt Fuel Cla ddings Ferritic Ma rtensitic Alloys a s Accident Tolera nt Fuel (ATF) Cla dding Ma teria l for Light Wa ter Rea ctors Ra ul B. Reba k, GE Globa l Resea rch DOE Integra tion Meeting, Sa lt La ke City 27-August-2013 DE NE 568 2 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ GE Project Tea m 3 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ Approa ch of GE Resea rch Proposa l * Demonstra te tha t sta inless iron ba sed bulk a lloys or Adva nced Steels ca n be used a s fuel cla dding ma teria ls in commercia l nuclea r rea ctors * The proposed ma teria l should be a s good a s Zr a lloys (or better tha n Zr a lloys) under norma l opera tion conditions 1. Resista nt to genera l corrosion a nd environmenta l cra

106

GE Teams with NY College to Pilot SOFC Technology |GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology GE - Fuel Cells to install...

107

Cs4(In0.27Ge0.73)15Ge8  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Cs8In8Ge38 representing the structure type Cs4(In0.27Ge0.73)15Ge8.

P. Villars; K. Cenzual; J. Daams…

2004-01-01T23:59:59.000Z

108

Ba6(In0.36Ge0.64)11Ge14  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Ba6In4Ge21 representing the structure type Ba6(In0.36Ge0.64)11Ge14.

P. Villars; K. Cenzual; J. Daams…

2005-01-01T23:59:59.000Z

109

Clean Cities: National Clean Fleets Partner: GE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE to GE to someone by E-mail Share Clean Cities: National Clean Fleets Partner: GE on Facebook Tweet about Clean Cities: National Clean Fleets Partner: GE on Twitter Bookmark Clean Cities: National Clean Fleets Partner: GE on Google Bookmark Clean Cities: National Clean Fleets Partner: GE on Delicious Rank Clean Cities: National Clean Fleets Partner: GE on Digg Find More places to share Clean Cities: National Clean Fleets Partner: GE on AddThis.com... Goals & Accomplishments Partnerships National Clean Fleets Partnership National Parks Initiative Electric Vehicle Infrastructure Training Program Advanced Vehicle Technology Competitions Natural Gas Transit & School Bus Users Group Natural Gas Vehicle Technology Forum Hall of Fame Contacts National Clean Fleets Partner: GE

110

GE Energy Formerly GE Power Systems | Open Energy Information  

Open Energy Info (EERE)

GE Power Systems GE Power Systems Jump to: navigation, search Name GE Energy (Formerly GE Power Systems) Place Atlanta, Georgia Zip 30339 Sector Renewable Energy, Solar, Wind energy Product Atlanta-based supplier of power generation and energy delivery technologies in all areas of the energy industry including renewable resources such as water, wind, solar and alternative fuels. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

111

Hot Hole p-Ge Lasers and Masers for Spectroscopy of MultiQuantum-Well Heterostructures Ge/Ge1-xSix  

Science Journals Connector (OSTI)

Hot hole p-Ge masers and lasers operating in millimiter and ... of the tunable spectrometer with hote hole p-Ge emitter is demostrated by its application to ... multi-quantum-well (MQW) heterostructures (HS) Ge/Ge

V. V. Nikonorov; V. I. Gavrilenko…

1995-01-01T23:59:59.000Z

112

Ge-nanocluster formation in Ge-doped polysilicon films under oxidation and heat treatment  

Science Journals Connector (OSTI)

An experimental investigation is conducted into the formation Ge nanoclusters by heat treatment of germanosilicate-glass... x Ge y O ...

A. A. Kovalevsky; A. S. Strogova; D. V. Plyakin

2009-03-01T23:59:59.000Z

113

Fostering Innovative Capacity via Organizational Reward Systems: The Case of Faculty Collaboration  

E-Print Network [OSTI]

FOSTERING INNOVATIVE CAPACITY VIA ORGANIZATIONAL REWARD SYSTEMS: THE CASE OF FACULTY COLLABORATION A Dissertation by CARA BETH BARTEK Submitted to the Office of Graduate Studies of Texas A&M University in partial... OF FACULTY COLLABORATION A Dissertation by CARA BETH BARTEK Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY Approved by...

Bartek, Cara Beth.

2010-10-12T23:59:59.000Z

114

Technology "Relay Race" Against Cancer | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Scientists in Technology "Relay Race" Against Cancer GE Scientists in Technology "Relay Race" Against Cancer GE technologies being developed to impact every stage of cancer...

115

In the light of time  

Science Journals Connector (OSTI)

...that of the system (or drops below...principle (Taylor Wheeler 2000) of large-scale...c (Taylor Wheeler 1992; Foster Nightingale...The present study follows the...phrased by John Wheeler (Taylor Wheeler...a stationary system the shortest...

2009-01-01T23:59:59.000Z

116

Novel affirmations: defending literary culture in the fiction of David Foster Wallace, Jonathan Franzen, and Richard Powers  

E-Print Network [OSTI]

This dissertation studies the fictional and non-fictional responses of David Foster Wallace, Jonathan Franzen, and Richard Powers to their felt anxieties about the vitality of literature in contemporary culture. The intangible nature of literature...

Little, Michael Robert

2004-09-30T23:59:59.000Z

117

Crowdsourcing Software Award | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Unveils High-Tech Superhero, GENIUS MAN MunichinteriorV 10 Years ON: From the Lab to the Real World in 10 Years 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

118

Work and Life Balance | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Achieving worklife balance is a much-talked-about topic. According to GE Healthcare's Kelly Piacsek, "GE hires people for what's inside their head-what they know-and the specific...

119

Hauptbewässerungs(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Hauptbewässerungs(ge)rinne f, (n) ? supply (irrigation) channel [The main channel supplying water to the irrigation area

2013-01-01T23:59:59.000Z

120

Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots  

SciTech Connect (OSTI)

The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to construct a detailed energy level diagram of the electron-hole spectrum of the Si/Ge structures. It is shown that the hole levels of Ge quantum dots are successfully described by the 'quantum box' model using the actual sizes of Ge islands. It I found that the position of the longwavelength photosensitivity boundary of Si/Ge structures with Ge quantum dots can be controlled by changing the growth parameters.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Exhaust emissions of volatile organic compounds of powered two-wheelers: Effect of cold start and vehicle speed. Contribution to greenhouse effect and tropospheric ozone formation  

Science Journals Connector (OSTI)

Abstract Powered two-wheeler (PTW) vehicles complying with recent European type approval standards (stages Euro 2 and Euro 3) were tested on chassis dynamometer in order to measure exhaust emissions of about 25 volatile organic compounds (VOCs) in the range C1–C7, including carcinogenic compounds as benzene and 1,3-butadiene. The fleet consists of a moped (engine capacity ? 50 cm3) and three fuel injection motorcycles of different engine capacities (150, 300 and 400 cm3). Different driving conditions were tested (US FPT cycle, constant speed). Due to the poor control of the combustion and catalyst efficiency, moped is the highest pollutant emitter. In fact, fuel injection strategy and three way catalyst with lambda sensor are able to reduce VOC motorcycles' emission of about one order of magnitude with respect to moped. Cold start effect, that is crucial for the assessment of actual emission of \\{PTWs\\} in urban areas, was significant: 30–51% of extra emission for methane. In the investigated speed range, moped showed a significant maximum of VOC emission factor at minimum speed (10 km/h) and a slightly decreasing trend from 20 to 60 km/h; motorcycles showed on the average a less significant peak at 10 km/h, a minimum at 30–40 km/h and then an increasing trend with a maximum emission factor at 90 km/h. Carcinogenic \\{VOCs\\} show the same pattern of total VOCs. Ozone Formation Potential (OFP) was estimated by using Maximum Incremental Reactivity scale. The greatest contribution to tropospheric ozone formation comes from alkenes group which account for 50–80% to the total OFP. VOC contribution effect on greenhouse effect is negligible with respect to CO2 emitted.

M. Antonietta Costagliola; Fabio Murena; M. Vittoria Prati

2014-01-01T23:59:59.000Z

122

GE Appliances and Lighting Home Energy Solutions  

Broader source: Energy.gov (indexed) [DOE]

GE Appliances and Lighting GE Appliances and Lighting Home Energy Solutions Introduction to Devices with Brillion(tm) Technology Portfolio of Products 3 GE Appliances and Lighting All Rights Reserved Brillion(tm) Suite of Home Energy Solutions Nucleus(tm) Smart Meter Other Devices Internet IHD Other Devices PCT Non-Meter Solution GE DRMS GEA Server 4 GE Appliances and Lighting All Rights Reserved Nucleus(tm) energy manager with Brillion(tm) technology Consumers can reduce electric usage by an average of 5% per year. 5 GE Appliances and Lighting All Rights Reserved GE Profile Appliances enabled with Brillion(tm) technology Delayed defrost during peak Delayed starts and temperature adjustments during peak Delayed start until off- peak Reduced energy usage 60%, DR- enabled Reduced wattage during peak When coupled with the Nucleus and a TOU

123

Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix  

SciTech Connect (OSTI)

Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-07-15T23:59:59.000Z

124

Characterization of Fish Passage Conditions through the Fish Weir and Turbine Unit 1 at Foster Dam, Oregon, Using Sensor Fish, 2012  

SciTech Connect (OSTI)

This report documents investigations of downstream fish passage research involving a spillway fish weir and turbine passage conditions at Foster Dam in May 2012.

Duncan, Joanne P.

2013-02-01T23:59:59.000Z

125

Ge atom distribution in buried dome islands  

SciTech Connect (OSTI)

Laser-assisted atom probe tomography microscopy is used to provide direct and quantitative compositional measurements of tri-dimensional Ge distribution in Ge dome islands buried by Si. Sub-nanometer spatial resolution 3D imaging shows that islands keep their facets after deposition of the Si cap, and that the island/substrate/Si cap interfaces are abrupt. The core of the domes contains 55% of Ge, while the island shell exhibits a constant composition of 15% of Ge. The {l_brace}113{r_brace} facets of the islands present a Ge enrichment up to 35%. The wetting layer composition is not homogeneous, varying from 9.5% to 30% of Ge.

Portavoce, A.; Berbezier, I.; Ronda, A.; Mangelinck, D. [CNRS, IM2NP, Case 142, 13397 Marseille Cedex 20 (France); Hoummada, K. [Aix-Marseille Universite, IM2NP, Case 142, 13397 Marseille Cedex 20 (France)

2012-04-16T23:59:59.000Z

126

The regulation of circadian clocks by light in fruitflies and mice  

Science Journals Connector (OSTI)

...correspondence (r.foster@ic.ac...circadian system, and for...More recent studies have monitored...Engelmann 1983; Wheeler et al. 1993...neuroanatomical study. Isr. J...circadian system. I. Di...Roenneberg, T. & Foster, R. G...Szel, A. & Foster, R. G...Pergamon. Wheeler, D. A...and imaging systems in nature...

2001-01-01T23:59:59.000Z

127

Estimation in regression models with externally estimated parameters  

Science Journals Connector (OSTI)

......compartmental system and involves...METABOLISM) Foster et al...kinetic model to study the early...2000; Wheeler and Bailer...G. S., FOSTER, D. AND...and Hall. FOSTER, D. M...environmental systems. In Patil...Wiley. WHEELER, M. W...simulation study of methods......

R. Todd Ogden; Thaddeus Tarpey

2006-01-01T23:59:59.000Z

128

membrane-ge | netl.doe.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high...

129

Robotic Wind Turbine Inspection | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector examines the...

130

Advanced Propulsion Systems | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing ...

131

One Young World Summit |GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

photo of Valentina Bisio. About the Author Valentina Bisio EEDP Graduate GE O&G - Turbomachinery Solutions Valentina is an EEDP graduate. She completed job rotations in TMS...

132

Nanoscale Material Properties | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nanotechnology Drives New Levels of Performance Nanotechnology Drives New Levels of Performance GE scientists are discovering new material properties at the nanoscale that drive...

133

Happy Pi Day! | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

is an area where GE researchers are intensifying their efforts. 3-D printing, an area of additive manufacturing, is providing new manufacturing freedom that was not possible with...

134

Patricia C. Irwin | Inventors | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

50 years as they seem now." -Patricia Irwin Creating a nonradioactive tracer for use in nuclear turbine testing. Re-establishing the dielectrics team to support GE businesses....

135

Ge/SiGe quantum well devices for light modulation, detection, and emission.  

E-Print Network [OSTI]

??This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform.… (more)

Chaisakul, Papichaya

2012-01-01T23:59:59.000Z

136

Ge–Si–O phase separation and Ge nanocrystal growth in  

Science Journals Connector (OSTI)

Ge:SiOx/SiO2 multilayers are fabricated using a new reactive dc magnetron sputtering approach. The influence of the multilayer stoichiometry on the ternary Ge–Si–O phase separation and the subsequent size-controlled Ge nanocrystal formation is explored by means of x-ray absorption spectroscopy, x-ray diffraction, electron microscopy and Raman spectroscopy. The ternary system Ge–Si–O reveals complete Ge–O phase separation at 400?°C which does not differ significantly to the binary Ge–O system. Ge nanocrystals of 2 is present after annealing. Thus, the Ge nanocrystals become completely embedded in a stoichiometric silica matrix favouring the use for photovoltaic applications.

Manuel Zschintzsch; Christoph J Sahle; Johannes von Borany; Christian Sternemann; Arndt Mücklich; Alexander Nyrow; Alexander Schwamberger; Metin Tolan

2011-01-01T23:59:59.000Z

137

Hot Hole Effects in Strained Mqw Heterostructures Ge/Ge1?xSix  

Science Journals Connector (OSTI)

The paper deals with the first investigations of the 2D hot hole effects in multilayer heterostructures Ge/Ge1?xSix...aimed at the realization of dynamical heating and intraband population inversion of carriers i...

V. Ya. Aleshkin; A. A. Andronov; N. A. Bekin…

1996-01-01T23:59:59.000Z

138

Surface Properties and Collective Modes of Electron-Hole Droplets in Ge, Si and Strained Ge  

Science Journals Connector (OSTI)

The surface structure, surface energy, and dipole barrier are obtained for condensed electron-hole droplets in Ge, Si, and strained Ge at zero temperature. The surface tension is...

T. L. Reinecke; F. Crowne; S. C. Ying

1974-01-01T23:59:59.000Z

139

Lee police get hot new cruiser from drug money -Fosters http://www.fosters.com/apps/pbcs.dll/article?AID=/20060223/NEWS08... 1 of 3 2/27/2006 10:15 AM  

E-Print Network [OSTI]

Lee police get hot new cruiser from drug money - Fosters http police get hot new cruiser from drug money By MARCUS WEISGERBER Democrat Staff Writer mweisgerber money seized by the New Hampshire Attorney General's Task Force during a bust last year, Murch said. Lee

New Hampshire, University of

140

Potential use of feebate systems to foster environmentally sound urban waste management  

SciTech Connect (OSTI)

Waste treatment facilities are often shared among different municipalities as a means of managing wastes more efficiently. Usually, management costs are assigned to each municipality depending on the size of the population or total amount of waste produced, regardless of important environmental aspects such as per capita waste generation or achievements in composting or recycling. This paper presents a feebate (fee+rebate) system aimed to foster urban waste reduction and recovery. The proposal suggests that municipalities achieving better results in their waste management performance (from an ecological viewpoint) be recompensated with a rebate obtained from a fee charged to those municipalities that are less environmentally sound. This is a dynamic and flexible instrument that would positively encourage municipalities to reduce waste whilst increasing the recycling.

Puig-Ventosa, Ignasi

2004-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Broadband Energy Harvesting Using a Metamaterial Resonator Embedded With Non-Foster Impedance Circuitry  

E-Print Network [OSTI]

Radio Frequency Identification (RFID) and implantable biomedical devices need efficient power and data transfer with very low profile antennas. We propose a low profile electrically small antenna for near-field wireless power and data telemetry employing a metamaterial Split Ring Resonator (SRR) antenna. SRRs can be designed for operation over wide frequencies from RF to visible. However, they are inherently narrowband making them sensitive to component mismatch with respect to external transmit antenna. Here we propose an embedding of a non-foster impedance circuitry into the metamaterial SRR structure that imparts conjugate negative complex impedance to this resonator antenna thereby increasing the effective bandwidth and thus overcoming the fundamental limit for efficient signal coupling. We demonstrate the concept through extensive numerical simulations and a prototype system at the board level using discrete off-the-shelf components and printed circuit SRR antenna at 500 MHz. We show that the power trans...

Fu, Guoqing

2014-01-01T23:59:59.000Z

142

GE Turbine Parts www.edisonmachine.com  

E-Print Network [OSTI]

vehicle: Has the code for a hydrogen car been cracked? World-first working eukaryotic cell mad from get swanky with the Equus Bass770 Zenos reveals details of the E10 roadster The Toyota FCV fuel cellGE Turbine Parts www.edisonmachine.com New authentic GE and Westinghouse Turbine Parts Muscle cars

Chiao, Jung-Chih

143

Modeling of GE Appliances: Final Presentation  

SciTech Connect (OSTI)

This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

2013-01-31T23:59:59.000Z

144

BRAZIL’S QUEST TO ALSO FOSTER WIND ENERGY IN THE DEREGULATED MARKET: WILL IT WORK? Authors:  

E-Print Network [OSTI]

Brazil began fostering wind energy in 2004 through a feed-in incentive program named Proinfa, with limited success. In 2009 wind energy began to be contracted through a series of government auctions within the regulated market, known in Brazil as ACR, with the objective of increasing the current 1.8GW in installed capacity to over 8 GW by 2016.

Marta Corrêa Dalbem Unigranrio; Luiz Eduardo Teixeira Brandão Puc-rio; Leonardo Lima Gomes Puc-rio

145

Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals  

SciTech Connect (OSTI)

Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

146

Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals  

SciTech Connect (OSTI)

Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

147

Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing  

SciTech Connect (OSTI)

A study of the bandgap character of compressively strained GeSn{sub 0.060-0.091}/Ge(001) quantum wells grown by molecular beam epitaxy is reported. The built-in strain in GeSn wells leads to an increased separation between L and {Gamma} conduction band minima. The prevalent indirect interband transitions in GeSn were probed by photoluminescence spectroscopy. As a result we could simulate the L-valley bowing parameter in GeSn alloys, b{sub L} = 0.80 {+-} 0.06 eV at 10 K. From this we conclude that even compressively strained GeSn/Ge(001) alloys could become direct band gap semiconductors at the Sn-fraction higher than 17.0 at. %.

Tonkikh, Alexander A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Institute for Physics of Microstructures RAS, GSP-105, Nizhniy Novgorod (Russian Federation); Eisenschmidt, Christian; Schmidt, Georg [Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3 D-01620, Halle (Saale) (Germany); Talalaev, Vadim G. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany); Zakharov, Nikolay D.; Werner, Peter [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Schilling, Joerg [ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany)

2013-07-15T23:59:59.000Z

148

Ge-on-Si laser for silicon photonics  

E-Print Network [OSTI]

Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

Camacho-Aguilera, Rodolfo Ernesto

2013-01-01T23:59:59.000Z

149

Science as Art: Jet Engine Airflow | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

used heavily by GE Aviation, GE Power & Water, and GE Oil & Gas for the design of turbomachinery, e.g. jet engines, gas turbines, etc. I had the chance to talk with Brian to...

150

Mental Health Beliefs and Barriers to Accessing Mental Health Services in Youth Aging out of Foster Care  

Science Journals Connector (OSTI)

AbstractObjective To examine the perspectives of youth on factors that influence mental health service use after aging out of foster care. Methods Focus groups were conducted with youth with a history of mental health needs and previous service use who had aged out of foster care. Questions were informed by the Health Belief Model and addressed 4 domains: youth perceptions of the “threat of mental health problems,” treatment benefits versus barriers to accessing mental health services, self-efficacy, and “cues to action.” Data were analyzed using a modified grounded-theory approach. Results Youth (N = 28) reported ongoing mental health problems affecting their functioning; however, they articulated variable levels of reliance on formal mental health treatment versus their own ability to resolve these problems without treatment. Past mental health service experiences influenced whether youth viewed treatment options as beneficial. Youth identified limited self-efficacy and insufficient psychosocial supports “cueing action” during their transition out of foster care. Barriers to accessing mental health services included difficulties obtaining health insurance, finding a mental health provider, scheduling appointments, and transportation. Conclusions Youths' perceptions of their mental health needs, self-efficacy, psychosocial supports during transition, and access barriers influence mental health service use after aging out of foster care. Results suggest that strategies are needed to 1) help youth and clinicians negotiate shared understanding of mental health treatment needs and options, 2) incorporate mental health into transition planning, and 3) address insurance and other systemic barriers to accessing mental health services after aging out of foster care.

Christina Sakai; Thomas I. Mackie; Rashmi Shetgiri; Sara Franzen; Anu Partap; Glenn Flores; Laurel K. Leslie

2014-01-01T23:59:59.000Z

151

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure  

SciTech Connect (OSTI)

The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2013-08-19T23:59:59.000Z

152

Engineer Receives UMass "Salute To Service" Award | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award Dr. Marshall...

153

Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers  

SciTech Connect (OSTI)

Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-21T23:59:59.000Z

154

Das Mischungsverhalten von Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge  

Science Journals Connector (OSTI)

Mittels homogenisierter Sinter-und Schmelzproben wird die Bildung von lückenlosen Mischreihen zwischen Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge nachgewiesen.

H. Holleck; F. Benesovsky; H. Nowotny

1962-01-01T23:59:59.000Z

155

GE_Order_and_Compromise_Agreement.pdf  

Broader source: Energy.gov (indexed) [DOE]

GE Appliances, a Division of GE Appliances, a Division of General Electric Company, Respondent ) ) ) ) ) ) ORDER By the General Counsel, U.S. Department of Energy: Case Number: 2012-SE-1403 1. In this Order, I adopt the attached Compromise Agreement entered into between the U.S. Department of Energy ("DOE") and GE Appliances, a Division of General Electric Company ("Respondent"). The Compromise Agreement resolves the case initiated after DOE was informed, based on test results made available as a result of verification testing by the Association of Home Appliance Manufacturers ("AHAM"), that aGE refrigerator basic model may not meet the energy conservation standard set forth in 10 C.F.R. § 430.32(a). 2. DOE and Respondent have negotiated the terms of the Compromise Agreement that

156

12 GeV Upgrade | Jefferson Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages

Science Science A Schematic of the 12 GeV Upgrade The 12 GeV Upgrade will greatly expand the research capabilities of Jefferson Lab, adding a fourth experimental hall, upgrading existing halls and doubling the power of the lab's accelerator. A D D I T I O N A L L I N K S: 12 GeV Home Public Interest Scientific Opportunities Hall D Status Updates Contacts Three-Year Accelerator Schedule 2014 - 2016 top-right bottom-left-corner bottom-right-corner 12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using

157

Working in the Cleanroom | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The Dirt on the Cleanroom The Dirt on the Cleanroom In this short video, take a look inside the GE Global Research cleanroom and meet the team working in this 28,000-square-foot...

158

Metal MEMS Devices | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MEMS: Inside the Global Research Cleanroom MEMS: Inside the Global Research Cleanroom This follow-up to our introduction to MEMS takes you inside the GE Global Research cleanroom...

159

Adam Rasheed | Inventors | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A GE-NASA effort that developed the world's first and largest multi-tube pulse detonation engine that fires into a large-scale turbine-along with its deafening whine and...

160

Air Traffic Operations | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Manufacturing in Europe LucasMaltaairplaneV Green Skies of Brazil 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing 3-4-4-v GE...

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

MEXICO: GE Lets Mexicans Buy In  

Science Journals Connector (OSTI)

MEXICO: GE Lets Mexicans Buy In ... General Electric de Mexico, the country's biggest manufacturer of electrical products, had been one of the major Mexican firms still wholly owned by a foreign parent. ...

1968-07-15T23:59:59.000Z

162

Andrew Gorton | Inventors | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

"My goal is to make the world a better place by reducing the amount of water used during hydraulic fracturing, as well as continue to make GE products quieter, thereby reducing...

163

GE's Christine Furstoss Named to NACIE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

companies like GE will need workers with new and advanced skills in areas like 3D printing and virtual design. It's all about growing a new generation of workforce skills,...

164

Jie Shen | Inventors | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Power Conversion in developing the novel medium-voltage drive MV6 series, from NTI (new technology introduction) to NPI (new product introduction) to product release and to...

165

Mess(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Mess(ge)rinne f, (n), Messkanal m ? flume, sluice, measuring flume, measuring sluice, meter flume, measurement flume, launder, measurement sluice, meter sluice [A channel in which water i...

2013-01-01T23:59:59.000Z

166

GE Scientists Source Best Ideas at hackMIT | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

the Manufacturing Platform DirectWriteV Building More Intelligent GE Products with Additive Manufacturing MEMSVertical Next-gen RF MEMS Switch for a Smarter, Faster...

167

GE partners with Matthew Dear to create "Drop Science" | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to Create "Drop Science" GE Partners with Matthew Dear to Create "Drop Science" Every machine has its own acoustic signature - a precise frequency that indicates whether that...

168

GE Opens New Global R&D Center in Brazil - GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Center to focus on subsea oil and gas research, capitalizing on 1.2 trillion offshore market opportunity Site will include "Crotonville" GE leadership facility to help...

169

Relaxation and recombination processes in Ge/SiGe multiple quantum wells  

SciTech Connect (OSTI)

The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

2013-12-04T23:59:59.000Z

170

In Texas, Energy Sec. Moniz to Echo President’s State of the Union Call to Foster Advanced Manufacturing and Innovation  

Broader source: Energy.gov [DOE]

Secretary of Energy Ernest Moniz will travel to Austin and San Antonio, Texas to highlight the President’s State of the Union Address and the Administration’s efforts to foster innovation and advanced manufacturing

171

In re COMPREHENSIVE BUSINESS SYSTEMS, INC., Debtor. CASHFLOW DESIGN, INC., Plaintiff, v. Townsend FOSTER, Jr., Trustee for Comprehensive Business Systems, Inc., Defendant. DEPARTMENT  

E-Print Network [OSTI]

Conditions & Provisions > Conditions Precedent Contracts Law > Contract Interpretation > General Overview > General Overview Contracts Law > Types of Contracts > Settlement Agreements COUNSEL: [**1] Townsend Foster > Settlements > Settlement Agreements > Enforcement > General Overview Contracts Law > Types of Contracts

Shamos, Michael I.

172

Comparative Biomedical Sciences is one of five graduate fields associated with the Biological & Biomedical Sciences (BBS) Graduate Program. As an umbrella program, the BBS fosters an atmosphere  

E-Print Network [OSTI]

Background Comparative Biomedical Sciences is one of five graduate fields associated with the Biological & Biomedical Sciences (BBS) Graduate Program. As an umbrella program, the BBS fosters fields are members of the BBS Graduate Program: Comparative Biomedical Sciences Immunology & Infectious

Walter, M.Todd

173

The FEMP Awards Program: Fostering Institutional Change and Energy Management Excellence  

SciTech Connect (OSTI)

This report assesses the use of institutional change principles and the institutional impact of award-winning projects through interviews with 22 Department of Energy Federal Energy Management Program (DOE FEMP) award winners. Award winners identified institutional facilitators and barriers in their projects and programs as well as factors in their implementation processes, thus providing information that can guide other efforts. We found that award winners do use strategies based on eight principles of institutional change, most frequently in terms of making changes to infrastructure, engaging leadership, and capitalizing on multiple motivations for making an energy efficiency improvement. The principles drawn on the least often were commitment and social empowerment. Award winners also faced five major types of obstacles that were institutional in nature: lack of resources, constraints of rules, psychological barriers, lack of information, and communication problems. We also used the seven categories of Energy Management Excellence (EME) as a lens to interpret the interview data and assess whether these categories relate to established institutional change principles. We found that the eight principles reflect strategies that have been found to be useful in improving energy efficiency in organizations, whereas the EME categories capture more of a blend of social contextual factors and strategies. The EME categories fill in some of the social context gaps that facilitate institutional change and energy management excellence, for example, personal persistence, a culture that supports creativity and innovation, regular engagement with tenants, contractors, and staff at all levels. Taking together the use of principles, EME criteria, and obstacles faced by interviewees, we make recommendations for how FEMP can better foster institutional change in federal agencies.

McDermott, Christa; Malone, Elizabeth L.

2014-05-20T23:59:59.000Z

174

Kohlenstoffhaltige ternäre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternären Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner dürften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

175

Influence of C on Ge incorporation in the growth of Ge-rich Ge1?x?ySixCy alloys on Si (100)  

Science Journals Connector (OSTI)

Ge-rich Ge1?x?ySixCy...alloys have been grown on Si (100) substrates by plasma-enhanced rapid thermal chemical vapor deposition. It is found that there is a strong suppressive effect of C on the Ge composition an...

X.B. Liu; L. Zang; S.M. Zhu; X.M. Cheng; P. Han; Z.Y. Luo; Y.D. Zheng

2000-04-01T23:59:59.000Z

176

New York–Presbyterian and GE  

Science Journals Connector (OSTI)

...originate. Our collaboration with GE Medical Systems is based on having access to business skills and cutting-edge equipment that, in our judgment, will benefit our patients and increase our ability to provide cost-effective, high-quality care. We purchase from GE only technology that the hospital deems... To the Editor: In his Perspective article, Dr. Garber (Oct. 14 issue)1 appropriately alerts us to the potential for conflicts of interest when an academic medical center forms a relationship with a business company. New York–Presbyterian Hospital is very ...

2005-02-03T23:59:59.000Z

177

GE Hitachi Nuclear Energy | Open Energy Information  

Open Energy Info (EERE)

GE Hitachi Nuclear Energy GE Hitachi Nuclear Energy Jump to: navigation, search Name GE Hitachi Nuclear Energy Place Wilmington, North Carolina Zip 28402 Sector Efficiency, Services Product GE Hitachi Nuclear Energy develops advanced light water reactors and offers products and services used by operators of boiling water reactor (BWR) nuclear power plants to improve efficiency and boost output. Coordinates 42.866922°, -72.868494° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.866922,"lon":-72.868494,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

178

Viscosity Measurement G.E. Leblanc  

E-Print Network [OSTI]

30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western Ontario 30.1 Shear Viscosity ............................................................. 30-l Newtonian and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic

Kostic, Milivoje M.

179

Environmental implications of plastic debris in marine settings—entanglement, ingestion, smothering, hangers-on, hitch-hiking and alien invasions  

Science Journals Connector (OSTI)

...some time (e.g. Wheeler 1916; WHOI 1952...fishermen-an exploratory study. Mar. Pollut...Gregory, M. R., Foster, B. A. 1996 Fouling...Gregory, M. R., Foster, B. A. In preparation...Tane 27, 175. Wheeler, W. M. 1916 Ants...awards and rating systems. Shore Beach 63...

2009-01-01T23:59:59.000Z

180

Adaptation and the genetics of social behaviour  

Science Journals Connector (OSTI)

...importance for the study of behaviour...Strassmann 1998; Foster et al. 2006...Numerous genetic studies in insects...1999; Evans Wheeler 2001; Whitfield...the genetic system, including...melanocortin system, coloration...J. D. , Wheeler, D. E. 2001...001535 ) Foster, K. R...

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

STATEMENT OF CONSIDERATIONS REQUEST BY GE CORPORATE RESEARCH & DEVELOPMENT (GE-CRD)  

Broader source: Energy.gov (indexed) [DOE]

CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC07- 96ID13406; W(A)-96-004; CH-0894 The Petitioner, GE Corporate Research & Development (GE-CRD) has requested a waiver of domestic and foreign patent rights for all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Electric Vehicle Program - Ultracapacitor/Battery Electronic Interface Project." The objective of the cooperative agreement is to develop prototype electronic interface hardware to verify the design of the power electronics and basic control strategy for an advanced electric vehicle drive line that uses ultracapacitors to load level the main storage battery. The

182

Defect luminescence in films containing Ge and GeO{sub 2} nanocrystals  

SciTech Connect (OSTI)

Amorphous SiO{sub x} alloys containing Ge or GeO{sub 2} nanocrystals are produced by dc-magnetron sputtering and controlled crystallization. The samples are investigated by Raman scattering, transmission electron microscopy, photoluminescence and excitation spectroscopy. Under UV excitation, both types of films luminesce around 3.1 eV, with identical PL line shapes and subnanosecond PL dynamics. The strongest PL intensity is found for the films containing FeO{sub 2} crystals and for the largest nanocrystals. These results are a clear indication that although the blue luminescence is without a doubt correlated with the formation of Ge (or GeO{sub 2}) nanocrystals, it is not produced by the radiative recombination of excitons confined in the nanocrystals. Possible mechanisms for the luminescence are discussed, including defects at the nanocrystal/matric interface or in the matrix itself.

Zacharias, M.; Atherton, S.J.; Fauchet, P.M.

1997-07-01T23:59:59.000Z

183

Silicon Carbides in the Cleanroom | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Clean Room: Silicon Carbides GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-resear...

184

The Majorana Ge-76 double-beta decay project  

SciTech Connect (OSTI)

The MAJORANA Project is a research and development activity set up to establish the feasibility and cost of a doublebetadecay experiment comprising a one-ton array of Ge detectors fabricated from germanium enriched to about 86% in Ge-76.

Avignone, Frank Titus [ORNL

2010-01-01T23:59:59.000Z

185

Conservation of bond lengths in strained Ge-Si layers  

Science Journals Connector (OSTI)

The combined techniques of x-ray-absorption fine structure and x-ray diffraction have been used to study the strain and bond distortions in epitaxial Ge-Si on Si(001). In a 31% Ge, 340-Å pseudomorphic Ge-Si film, the Ge-Ge and Ge-Si first-neighbor bond lengths have been found to be 2.44±0.02 and 2.38±0.02 Å, respectively. The lattice parameter perpendicular to the Ge-Si/Si(001) interface has been found to be a?=5.552±0.002 Å, in agreement with the predictions of macroscopic elastic theory. These results show that the bond-length strain in the epitaxial layer appears in the second and higher coordination shells, rather than in the nearest-neighbor bond lengths, which remain the same as in unstrained Ge-Si. A microscopic model is presented that accounts for these findings.

J. C. Woicik; C. E. Bouldin; M. I. Bell; J. O. Cross; D. J. Tweet; B. D. Swanson; T. M. Zhang; L. B. Sorensen; C. A. King; J. L. Hoyt; P. Pianetta; J. F. Gibbons

1991-01-15T23:59:59.000Z

186

Tailoring the spin polarization in Ge/SiGe multiple quantum wells  

SciTech Connect (OSTI)

We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.

Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario [LNESS-Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, I-20125 Milano (Italy); Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni [LNESS-Dipartimento di Fisica, Politecnico di Milano, I-20133 Milano (Italy); Trivedi, Dhara; Song, Yang [Department of Physics and Astronomy, University of Rochester, Rochester (United States); Li, Pengki [Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States); Dery, Hanan [Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 and Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)

2013-12-04T23:59:59.000Z

187

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*  

E-Print Network [OSTI]

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

Bowers, John

188

Discussion on the Low Temperature Magnetothermal Conductivity in Lightly Doped Ge(Sb) and Ge(As)  

Science Journals Connector (OSTI)

Some time ago we reported1) measurements of magnetothermal conductivity in n-type Ge in the temperature range 1.3?T?...1): For Ge(Sb) with the field Bll ...o, is negative, increases in magnitude approximatel...

Leif Halbo

1976-01-01T23:59:59.000Z

189

Ferromagnetic Mn5Ge3C0.8 contacts on Ge: work function and specific contact resistivity  

Science Journals Connector (OSTI)

We report on the study of the electrical and magnetic properties of Mn5Ge3C0.8 contacts deposited on highly doped n-Ge (1?0?0) as a potentially complementary metal–oxide–semiconductor (CMOS)-compatible material system for spin injection into Ge. Mn5Ge3C0.8 is a ferromagnet with a Curie temperature of 445 K and with a resistivity that is comparable to highly doped Ge. We extract the work function of Mn5Ge3C0.8 from metal–oxide–semiconductor capacitance measurements and obtain a specific contact resistivity rC = 5.0 ? cm2 from transmission-line measurements. We discuss possible origins of the large specific contact resistivity of Mn5Ge3C0.8 on Ge.

I A Fischer; J Gebauer; E Rolseth; P Winkel; L-T Chang; K L Wang; C Sürgers; J Schulze

2013-01-01T23:59:59.000Z

190

GE Wind Energy Germany | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Name GE Wind Energy Germany Place Salzbergen, Germany Zip 48499 Sector Wind energy Product Germany-based, division of GE Wind Energy wind turbine manufacturer and supplier. Coordinates 52.323136°, 7.347278° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":52.323136,"lon":7.347278,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

191

Stable, free-standing Ge nanocrystals  

SciTech Connect (OSTI)

Free-standing Ge nanocrystals that are stable under ambient conditions have been synthesized in a two-step process. First, nanocrystals with a mean diameter of 5 nm are grown in amorphous SiO{sub 2} by ion implantation followed by thermal annealing. The oxide matrix is then removed by selective etching in diluted HF to obtain free-standing nanocrystals on a Si wafer. After etching, nanocrystals are retained on the surface and the size distribution is not significantly altered. Free-standing nanocrystals are stable under ambient atmospheric conditions, suggesting formation of a self-limiting native oxide layer. For free-standing as opposed to embedded Ge nanocrystals, an additional amorphous-like contribution to the Raman spectrum is observed and is assigned to surface reconstruction-induced disordering of near-surface atoms.

Sharp, I.D.; Xu, Q.; Liao, C.Y.; Yi, D.O.; Beeman, J.W.; Liliental-Weber, Z.; Yu, K.M.; Zakharov, D.N.; Ager III, J.W.; Chrzan,D.C.; Haller, E.E.

2005-01-28T23:59:59.000Z

192

Role of nucleation sites on the formation of nanoporous Ge  

SciTech Connect (OSTI)

The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

2012-09-24T23:59:59.000Z

193

Suppression of Ge-O And Ge-N Bonding at Ge-HfO(2) And Ge-TiO(2) Interfaces By Deposition Onto Plasma-Nitrided Passivated Ge Substrates: Integration Issues Ge Gate Stacks Into Advanced Devices  

SciTech Connect (OSTI)

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO{sub 2} and TiO{sub 2}, on plasma-nitrided Ge(100) substrates, and Si(100) substrates with ultra-thin (-0.8 nm) plasma-nitrided Si suboxide, SiO{sub x}, x < 2, or SiON interfacial layers is presented. Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of these films by Jahn-Teller distortion removal of band edge d-state degeneracies. These results identify a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{sub 1} edge absorptions. This paper also includes a brief discussion of the integration issues for the introduction of this Ge breakthrough into advanced semiconductor circuits and systems. This includes a comparison of nano-crystalline and non-crystalline dielectrics, as well as issues relative to metal gates.

Lee, S.; Long, J.P.; Lucovsky, G.; Whitten, J.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

194

Interface and nanostructure evolution of cobalt germanides on Ge(001)  

SciTech Connect (OSTI)

Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

2014-02-21T23:59:59.000Z

195

Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates  

SciTech Connect (OSTI)

The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

196

GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery  

Office of Science (SC) Website

GE Uses DOE Advanced Light Sources to Develop GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Discovery & Innovation Stories of Discovery & Innovation Brief Science Highlights SBIR/STTR Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 06.13.11 GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Company is constructing a new battery factory in Upstate New York that is expected to create 300+ jobs. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo GE's new Image courtesy of GE GE's new "Durathon(tm)" sodium metal halide battery. The story of American manufacturing over the past two decades has too often been a tale of outsourcing, off-shoring, and downsizing-not least in

197

Über die Thalliumgermanate Tl2Ge4O9 und Tl2Ge6O13  

Science Journals Connector (OSTI)

Nach Dehydratation des Germanat-Zeoliths Tl3HGe7O16· · 4 H2O bildet sich bei 650°C das zu Me2Ge4O9 (Me=Na, K, Rb) isotype Thalliumtetragermanat. Durch Entwässerung bei 700°C entsteht aus dem Zeolith ein stabiles ...

Penelope Papamantellos; A. Wittmann

1962-01-01T23:59:59.000Z

198

GE Wind Energy | Open Energy Information  

Open Energy Info (EERE)

Wind Energy Wind Energy Jump to: navigation, search Name GE Wind Energy Place Atlanta, Georgia Zip GA 30339 Sector Wind energy Product GE's wind energy division, formed as a result of the purchase of almost all of Enron Wind Corporation's assets. Provides power plant design, engineering and site selection, as well as operation and maintenance. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

199

Messungen derK-Konversionskoeffizienten und der Aktivierungsquerschnitte der isomeren Atomkerne Se77m , Se79m , Ge75m und Ge77m  

Science Journals Connector (OSTI)

TheK-conversion coefficients ? K of the nuclear isomers Se77m , Se79m , Ge75m and Ge77m have been measured by d...

Hermann Weigmann

1962-01-01T23:59:59.000Z

200

Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces  

SciTech Connect (OSTI)

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1995-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Biofuel Research at Brazil Center of Excellence | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

do texto. Aproveitem. A misso do centro de excelncia de biocombustves da GE do Brasil aumentar a capacidade local de fornecer tecnologia na produo de biocombustves...

202

Meeting Energy Needs in Brazil |GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Brazil Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de...

203

GE Technology to Help Canada Province Meet Growing Energy Needs  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

204

Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Governor Cuomo Announces 100 Businesses Led by GE to Join 500 Million Partnership with State to Develop Next-Generation Power Electronics, Creating Thousands of Jobs in Capital...

205

Technology makes reds "pop" in LED displays | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Televisions Research breakthrough will vastly improve color and crispness of images on LED devices NISKAYUNA, NY, July, 24, 2014 - GE announced today a research breakthrough that...

206

Titan propels GE wind turbine research into new territory | ornl...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

207

Heteroepitaxial Ge-on-Si by DC magnetron sputtering  

SciTech Connect (OSTI)

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany)] [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Patzig, Christian; Berthold, Lutz; Höche, Thomas [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany)] [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany); Tünnermann, Andreas [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany) [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena (Germany)

2013-07-15T23:59:59.000Z

208

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect (OSTI)

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

209

Effect of Ge-composition on the Gain of a Thin Layer Si 1-y Ge y Avalanche Photodiode  

Science Journals Connector (OSTI)

Gain calculation of Si 1-y Ge y n+-i-p+...avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers c...

Kanishka Majumder; N. R. Das

2014-01-01T23:59:59.000Z

210

MU(& Ge-+v,  

Office of Legacy Management (LM)

fil fil MU(& Ge-+v, . !d R&arch & Development b This document consists of 6 Contract Ho. pages and - . --------------_____---. figures No.--~--of.--~~-_-copies, Series,&,, This subcontract entered into this 20 day 0fSepte~ber , 1943, by and between the University of Cliicago, a corporation not for pecuniary profit organized under the ICVS of the Stnto of Illinois, of Chicago, Illinois (hereinafter called "the Contractor") and Yiolverine Tube Divisionof Caluzet 2 Eecla Consolidated Co;-,er co, . a cor?orntion organized under the laws cf the State of l~lch~;an - of Detroit, I:ichigan --- (hersinnftcr called "the Subcontractoi"). WIEHEAS, tho Contractor has heretofore onterod into a contract v;ith the United States of America (rcprcse;!tcd by its dtlly designated

211

Charm photoproduction at 20 GeV  

Science Journals Connector (OSTI)

Sixty-two charm events have been observed in an exposure of the SLAC Hybrid Facility toa backward sacttered laser beam. Based on 22 neutral and 21 charged decays we have measured the charmed-meson lifetimes to be ?D0=(6.8-1.8+2.3)×10-13 sec, ?D±=(7.4-2.0+2.3)×10-13 sec and their ratio ?D±?D0=1.1-0.3+0.6. The inclusive charm cross section at a photon energy of 20 GeV has been measured to be 56-23+24 nb. Evidence is presented for a non-DD¯ component to charm production, consistent with (35±20)% ?c+ production and some D*± production. We have found no unambiguous F decays.

K. Abe et al. ((SLAC Hybrid Facility Photon Collaboration))

1984-07-01T23:59:59.000Z

212

3 GeV Injector Design Handbook  

SciTech Connect (OSTI)

This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

Wiedemann, H.; /SLAC, SSRL

2009-12-16T23:59:59.000Z

213

Photoemission study of Si(111)-Ge(5×5) surfaces  

Science Journals Connector (OSTI)

Photoemission spectroscopy was used to study Si(111)-Ge(5×5) surfaces prepared by annealing Ge films deposited onto Si(111)-(7×7) substrates. The Si 2p core-level line shape was modified in going from (7×7) to (5×5) systems. By decomposing the spectra into bulk- and surface-shifted components the changes in line shape were identified as due to selective replacement of Si by Ge in different layers of the substrate, without any drastic change in the surface structure. The Ge 3d core-level line shape for the Si(111)-Ge(5×5) surface was also measured and compared with that for the Ge(111)-c(2×8) surface. These results are discussed in terms of models for the Si(111)-(7×7) structure. A surface state was observed on the Si(111)-Ge(5×5) surface, which gave rise to a metalliclike Fermi edge in the angle-integrated spectra; a similar surface state was observed on the Si(111)-(7×7) surface but not on the Ge(111)-c(2×8) surface.

T. Miller; T. C. Hsieh; T. -C. Chiang

1986-05-15T23:59:59.000Z

214

Vibrational dynamics in isotopically substituted vitreous GeO2  

Science Journals Connector (OSTI)

We report the polarized Raman spectra of vitreous Ge O216, Ge O218, Ge70O2, and Ge74O2. This yields the O16?O18 and Ge70?Ge74 isotopic shifts for nearly all vibrational modes of the pure glassy material. The shifts of the broad high-frequency (infrared-active) modes are as predicted by a nearest-neighbor central-force ideal continuous—random-network model. The shift of the broad dominant Raman line indicates a small but significant dependence on the Ge mass, and this suggests an effect of disorder not included in the central-force theory. The narrow "defect" line at 530 cm-1 appears to be all oxygen motion, and is tentatively identified with a regular ring of bonds. The narrow line at 345 cm-1 is unique in that it exhibits very little oxygen shift; it seems to consist largely of Ge motion, for which we have no firm explanation.

F. L. Galeener; A. E. Geissberger; G. W. Ogar; Jr.; R. E. Loehman

1983-10-15T23:59:59.000Z

215

Secretary Chu Speaks at GE Solar Facility | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Chu Speaks at GE Solar Facility Chu Speaks at GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here. It's great to be in Colorado, a state that is at the forefront of the clean energy economy and has more solar jobs per capita than any other state[i]. I'm here at a critical time for America's energy future. It's a time of challenge, but it's also a time of opportunity.

216

GE Nucleus for Residential Energy Use Education, Home Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Nucleus for Residential Energy Use Education, Home Energy GE Nucleus for Residential Energy Use Education, Home Energy Management/Control, Residential Energy Integration Speaker(s): William Watts Date: August 4, 2011 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Janie Page Home Energy Gateways offer a single point of access to the AMI Smart Meter into the home. The Nucleus is GE's home energy management gateway. The GE Nucleus securely communicates to a Smart Meter and delivers real-time whole home energy consumption data for display to the Consumer. The Consumer is able to visualize their energy usage habits on a Client that is connected via TLS encryption to the WiFi or Ethernet interface of the Nucleus. The Nucleus records history of the consumer's usage and cost data for tracking of energy consumption habits. GE has a suite of Smart Appliances that

217

GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) |  

Broader source: Energy.gov (indexed) [DOE]

Noncompliance Determination (2013-SE-4901) Noncompliance Determination (2013-SE-4901) GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) January 11, 2013 DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. GE Lighting Solutions must immediately notify each person (or company) to whom GE Lighting Solutions distributed the noncompliant products that the products do not meet Federal standards. In addition, GE Lighting Solutions must provide to DOE documents and records showing the number of units GE Lighting Solutions distributed and to whom. The manufacturer

218

TEM studies of Ge nanocrystal formation in PECVD grown  

Science Journals Connector (OSTI)

We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate–oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900?°C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750?°C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850?°C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.

S A?an; A Dana; A Aydinli

2006-01-01T23:59:59.000Z

219

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer  

SciTech Connect (OSTI)

Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

2013-09-14T23:59:59.000Z

220

Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge1?x Six  

Science Journals Connector (OSTI)

The magnetoresistance of a lightly doped p-Ge1?x Six alloy is studied in the range of compositions x = 1–2 at %. The results are compared with the available data for lightly doped p-Ge. The studie...

A. I. Veinger; A. G. Zabrodskii; T. V. Tisnek

2005-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Mt Wheeler Power, Inc | Open Energy Information  

Open Energy Info (EERE)

Nevada Nevada Utility Id 13073 Utility Location Yes Ownership C NERC Location WECC NERC WECC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] Energy Information Administration Form 826[2] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png GS (Small General Service) Commercial H-1(Metered Residential or Commercial Electric Heat) Residential H-2 (Unmetered Residential Electric Heat Rate) Residential Irrigation Rate (Annual Charge) Commercial Irrigation Rate (Demand Charge) Commercial Irrigation Rate (Kilowatt Hour Rate) Commercial Irrigation Rate (Load Factor Rate) Commercial Irrigation Rate (Off-Peak Rate) Commercial

222

Causation, Association and Confirmation Gregory Wheeler1  

E-Print Network [OSTI]

the hypothesis that they got food poisoning from that restaurant. The hypothesis explains the evidence because-occurrence of their Tuesday stomach trouble is no evidence at all for restaurant induced food poisoning; the explanation the food served by the restaurant is a common cause of the five separate stomach ailments. Alternatively

Spirtes, Peter

223

An Integrated Study of the Grayburg/San Andres Reservoir, Foster and South Cowden Fields, Ector County Texas  

SciTech Connect (OSTI)

For a part of the Foster and South Cowden (Grayburg-San Andres) oil fields, improvement in oil production has been accomplished, in part, by using ?pipeline fracturing? technology in the most recent completion to improve fluid flow rates, and filtration of waterflood injection water to preserve reservoir permeability. The 3D seismic survey acquired in conjunction with this DOE project has been used to calculate a 3D seismic inversion model, which has been analyzed to provide detailed maps of porosity within the productive upper 250 feet of the Grayburg Formation. Geologic data, particularly from logs and cores, have been combined with the geophysical interpretation and production history information to develop a model of the reservoir that defines estimations of remaining producible oil. The integrated result is greater than the sum of its parts, since no single data form adequately describes the reservoir. Each discipline relies upon computer software that runs on PC-type computers, allowing virtually any size company to affordably access the technology required to achieve similar results.

Richard Weinbrandt; Robert C. Trentham; William Robinson

1997-10-23T23:59:59.000Z

224

National Medical Care System May Impede Fostering of True Specialization of Radiation Oncologists: Study Based on Structure Survey in Japan  

Science Journals Connector (OSTI)

Purpose To evaluate the actual work environment of radiation oncologists (ROs) in Japan in terms of working pattern, patient load, and quality of cancer care based on the relative time spent on patient care. Methods and Materials In 2008, the Japanese Society of Therapeutic Radiology and Oncology produced a questionnaire for a national structure survey of radiation oncology in 2007. Data for full-time \\{ROs\\} were crosschecked with data for part-time \\{ROs\\} by using their identification data. Data of 954 \\{ROs\\} were analyzed. The relative practice index for patients was calculated as the relative value of care time per patient on the basis of Japanese Blue Book guidelines (200 patients per RO). Results The working patterns of RO varied widely among facility categories. \\{ROs\\} working mainly at university hospitals treated 189.2 patients per year on average, with those working in university hospitals and their affiliated facilities treating 249.1 and those working in university hospitals only treating 144.0 patients per year on average. The corresponding data were 256.6 for cancer centers and 176.6 for other facilities. Geographically, the mean annual number of patients per RO per quarter was significantly associated with population size, varying from 143.1 to 203.4 (p Japan appear to be problematic for fostering true specialization of radiation oncologists.

Hodaka Numasaki; Hitoshi Shibuya; Masamichi Nishio; Hiroshi Ikeda; Kenji Sekiguchi; Norihiko Kamikonya; Masahiko Koizumi; Masao Tago; Yutaka Ando; Nobuhiro Tsukamoto; Atsuro Terahara; Katsumasa Nakamura; Michihide Mitsumori; Tetsuo Nishimura; Masato Hareyama; Teruki Teshima

2012-01-01T23:59:59.000Z

225

Sea Grant's role: sharing with the community the goal of fostering ecologically-sound, and economically-viable, aquaculture  

Science Journals Connector (OSTI)

US aquaculture is one of the fastest growing segments of US agriculture; however, as aquaculture expands, a number of environmental, regulatory, and socioeconomic concerns threaten to constrain further development of the industry. This presents unique challenges to the Sea Grant network. Although Sea Grant encourages the commercial development of aquaculture, it must work with local communities to promote the goal of fostering ecologically-sound and economically-viable aquaculture in the USA. Sea Grant supports aquaculture through an integrated method of research, education and extension. Both National and State Sea Grant Programs support competitive research programs. State Sea Grant programs also employ a number of extension specialists who work directly with the aquaculture industry and various other stakeholders including industry associations, regulatory agencies, researchers, educators, and the general public. These specialists facilitate communication among stakeholders, and offer technology transfer, technical assistance, and educational programs to further the development of the industry in their respective States. Extension specialists communicate industry issues, research needs, and challenges back to the Sea Grant network. Sea Grant, through its research, education, and extension programs, has made significant progress in identifying and solving key problems impeding the expansion of USA.

Tessa S. Getchis; Edward C. Monahan

2008-01-01T23:59:59.000Z

226

Formation of Nanocrystalline Germanium via Oxidation of Si?.??Ge?.?? for Memory Device Applications  

E-Print Network [OSTI]

In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si?.??Ge?.?? films. In dry oxidation, Ge was rejected from the growing ...

Kan, Eric Win Hong

227

Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals  

SciTech Connect (OSTI)

The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

2013-12-04T23:59:59.000Z

228

Low temperature epitaxial growth of Ge on cube- textured Ni  

SciTech Connect (OSTI)

Quasi- single crystal Ge films were grown on [001]<010> textured Ni substrate at a temperature of 350 oC using an insulating buffer layer of CaF2. A direct deposition of Ge on Ni at 350 oC was shown to alloy with Ni. From x- ray pole figure analysis, it was shown that Ge grew epitaxially with the same orientation as CaF2 and the dispersions in the out- of- plane and in- plane directions were found to be 1.7 0.1o and 6 1o, respectively. In the out- of- plane direction, Ge[111]||CaF2[111]||Ni[001]. In addition, the Ge consisted of four equivalent in- plane oriented domains such that two mutually orthogonal directions: Ge 211 and Ge 011 are parallel to mutually orthogonal directions: Ni 110 and Ni 110 , respectively of the Ni(001) surface. This was shown to be originated from the four equivalent in- plane oriented domains of CaF2 created to minimize the mismatch strain between CaF2 and Ni in those directions.

GIARE, C [Rensselaer Polytechnic Institute (RPI); Palazzo, J [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; WANG, G [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

229

The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1? x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, GaP-(Ge2)1?x (ZnSe)x, and Si-(Ge2)1?x (ZnSe)x  

Science Journals Connector (OSTI)

Based on morphological investigations, as well as on a study of the scanning patterns and diffraction spectra of the heterostructures GaAs-(Ge2)1?x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, Ga...

A. S. Saidov; É. A. Koshchanov; A. Sh. Razzakov

1998-01-01T23:59:59.000Z

230

GeV Emission from Collisional Magnetized Gamma Ray Bursts  

E-Print Network [OSTI]

Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

P. Mészáros; M. J. Rees

2011-04-26T23:59:59.000Z

231

US DOE-EM On-Site Disposal Cell Working Group - Fostering Communication On Performance Assessment Challenges  

SciTech Connect (OSTI)

On-site disposal cells are in use and being considered at several U.S. Department of Energy (USDOE) sites as the final disposition for large amounts of waste associated with cleanup of contaminated areas and facilities. These facilities are typically developed with regulatory oversight from States and/or the US Environmental Protection Agency (USEPA) in addition to USDOE. The facilities are developed to meet design standards for disposal of hazardous waste as well as the USDOE performance based standards for disposal of radioactive waste. The involvement of multiple and different regulators for facilities across separate sites has resulted in some differences in expectations for performance assessments and risk assessments (PA/RA) that are developed for the disposal facilities. The USDOE-EM Office of Site Restoration formed a working group to foster improved communication and sharing of information for personnel associated with these Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA) disposal cells and work towards more consistent assumptions, as appropriate, for technical and policy considerations related to performance and risk assessments in support of a Record of Decision and Disposal Authorization Statement. The working group holds teleconferences, as needed, focusing on specific topics of interest. The topics addressed to date include an assessment of the assumptions used for performance assessments and risk assessments (PA/RAs) for on-site disposal cells, requirements and assumptions related to assessment of inadvertent intrusion, DOE Manual 435.1-1 requirements, and approaches for consideration of the long-term performance of liners and covers in the context of PAs. The working group has improved communication among the staff and oversight personnel responsible for onsite disposal cells and has provided a forum to identify and resolve common concerns.

Seitz, Roger R. [Savannah River Site (SRS), Aiken, SC (United States); Suttora, Linda C. [U.S. Department of Energy, Office of Site Restoration, Germantown, MD (United States); Phifer, Mark [Savannah River Site (SRS), Aiken, SC (United States)

2014-03-01T23:59:59.000Z

232

National Medical Care System May Impede Fostering of True Specialization of Radiation Oncologists: Study Based on Structure Survey in Japan  

SciTech Connect (OSTI)

Purpose: To evaluate the actual work environment of radiation oncologists (ROs) in Japan in terms of working pattern, patient load, and quality of cancer care based on the relative time spent on patient care. Methods and Materials: In 2008, the Japanese Society of Therapeutic Radiology and Oncology produced a questionnaire for a national structure survey of radiation oncology in 2007. Data for full-time ROs were crosschecked with data for part-time ROs by using their identification data. Data of 954 ROs were analyzed. The relative practice index for patients was calculated as the relative value of care time per patient on the basis of Japanese Blue Book guidelines (200 patients per RO). Results: The working patterns of RO varied widely among facility categories. ROs working mainly at university hospitals treated 189.2 patients per year on average, with those working in university hospitals and their affiliated facilities treating 249.1 and those working in university hospitals only treating 144.0 patients per year on average. The corresponding data were 256.6 for cancer centers and 176.6 for other facilities. Geographically, the mean annual number of patients per RO per quarter was significantly associated with population size, varying from 143.1 to 203.4 (p < 0.0001). There were also significant differences in the average practice index for patients by ROs working mainly in university hospitals between those in main and affiliated facilities (1.07 vs 0.71: p < 0.0001). Conclusions: ROs working in university hospitals and their affiliated facilities treated more patients than the other ROs. In terms of patient care time only, the quality of cancer care in affiliated facilities might be worse than that in university hospitals. Under the current national medical system, working patterns of ROs of academic facilities in Japan appear to be problematic for fostering true specialization of radiation oncologists.

Numasaki, Hodaka [Department of Medical Physics and Engineering, Osaka University Graduate School of Medicine, Suita, Osaka (Japan); Shibuya, Hitoshi [Department of Radiology, Tokyo Medical and Dental University, Tokyo (Japan); Nishio, Masamichi [Department of Radiology, National Hospital Organization Hokkaido Cancer Center, Sapporo, Hokkaido (Japan); Ikeda, Hiroshi [Department of Radiology, Sakai Municipal Hospital, Sakai, Osaka (Japan); Sekiguchi, Kenji [Department of Radiation Oncology, St. Luke's International Hospital, Tokyo (Japan); Kamikonya, Norihiko [Department of Radiology, Hyogo College of Medicine, Nishinomiya, Hyogo (Japan); Koizumi, Masahiko [Oncology Center, Osaka University Hospital, Suita, Osaka (Japan); Tago, Masao [Department of Radiology, Teikyo University School of Medicine University Hospital, Mizonokuchi, Kawasaki, Kanagawa (Japan); Ando, Yutaka [Department of Medical Informatics, Heavy Ion Medical Center, National Institute of Radiological Sciences, Chiba (Japan); Tsukamoto, Nobuhiro [Department of Radiation Oncology, Saitama Medical University International Medical Center, Saitama (Japan); Terahara, Atsuro [Department of Radiology, Toho University Omori Medical Center, Tokyo (Japan); Nakamura, Katsumasa [Department of Radiology, Kyushu University Hospital at Beppu, Oita (Japan); Mitsumori, Michihide [Department of Radiation Oncology and Image-applied Therapy, Graduate School of Medicine Kyoto University, Kyoto (Japan); Nishimura, Tetsuo [Division of Radiation Oncology, Shizuoka Cancer Center, Shizuoka (Japan); Hareyama, Masato [Department of Radiology, Sapporo Medical University, Hokkaido (Japan); Teshima, Teruki, E-mail: teshima@sahs.med.osaka-u.ac.jp [Department of Medical Physics and Engineering, Osaka University Graduate School of Medicine, Suita, Osaka (Japan)

2012-01-01T23:59:59.000Z

233

Intermixing between HfO{sub 2} and GeO{sub 2} films deposited on Ge(001) and Si(001): Role of the substrate  

SciTech Connect (OSTI)

Thermally driven atomic transport in HfO{sub 2}/GeO{sub 2}/substrate structures on Ge(001) and Si(001) was investigated in N{sub 2} ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO{sub 2}/Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO{sub 2}/GeO{sub 2} stacks are stable only if isolated from the Ge substrate.

Soares, G. V.; Krug, C. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Miotti, L.; Bastos, K. P.; Lucovsky, G. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States); Baumvol, I. J. R. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Universidade de Caxias do Sul, Caxias do Sul, Rio Grande do Sul 95070-560 (Brazil); Radtke, C. [Instituto de Quimica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil)

2011-03-28T23:59:59.000Z

234

Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures  

SciTech Connect (OSTI)

The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

2013-02-25T23:59:59.000Z

235

GE Appliances: Proposed Penalty (2010-CE-2113) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) September 8, 2010 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Appliances failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Appliances: Proposed Penalty (2010-CE-2113) More Documents & Publications De'Longhi USA: Proposed Penalty (2010-CE-2114)

236

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Broader source: Energy.gov (indexed) [DOE]

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Act One: NPCP (2013-CE-49001) Excellence Opto: Proposed Penalty (2013-CE-49002)

237

Crystal Lake - GE Energy Wind Farm | Open Energy Information  

Open Energy Info (EERE)

GE Energy Wind Farm GE Energy Wind Farm Jump to: navigation, search Name Crystal Lake - GE Energy Wind Farm Facility Crystal Lake - GE Energy Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location IA Coordinates 43.194201°, -93.860521° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.194201,"lon":-93.860521,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

238

Northern Colorado Wind Energy Center (GE) | Open Energy Information  

Open Energy Info (EERE)

Center (GE) Center (GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Developer NextEra Energy Energy Purchaser Xcel Energy Location Logan County CO Coordinates 40.974539°, -103.025336° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.974539,"lon":-103.025336,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

239

ORNL Partners with GE on New Hybrid | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ORNL Partners with GE on New Hybrid ORNL Partners with GE on New Hybrid September 02, 2011 Water Heater About 400 jobs will soon be created at a Louisville General Electric plant at which a new electric water heater will be built. The technology was developed through a collaboration between ORNL and GE. The appliance will meet the new Energy Star water heater program criteria, which require future heaters to be twice as efficient as an electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save American households approximately $780 million. ORNL's Patrick Hughes said the water heater will benefit consumers with its energy efficiency as well as its cost savings. "It will give you as much hot water and have the same recovery times so you

240

Intern Shares Insight Into Researchers' Minds |GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

rest of the year, I am a Ph.D. candidate at Virginia Tech, where my research is in aerodynamics and instrumentation development. At school, my work is supported by GE Power and...

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

A Deep Dive into the Subsea Environment | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

every step must be carried out in a safe manner to assure the risk of any serious accident is kept low, with very tight and conservative control. Filling the need GE...

242

Laser Guiding for GeV Laser-Plasma Accelerators  

E-Print Network [OSTI]

Overview of plasma-based accelerator concepts. IEEE Trans.using laser wake?eld accelerators. Meas. Sci. Technol. 12,for GeV laser-plasma accelerators. In Advanced Accelerator

Leemans, Wim; Esarey, Eric; Geddes, Cameron; Schroeder, C.B.; Toth, Csaba

2005-01-01T23:59:59.000Z

243

Making Silicon Carbide Devices in the Cleanroom | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Silicon Carbide Devices in the Cleanroom Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research...

244

Ge-on-Si laser operating at room temperature  

E-Print Network [OSTI]

Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

Liu, Jifeng

245

Helping Astronauts Back on Earth | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Helping Astronauts Back on Earth Helping Astronauts Back on Earth Vikas Revanna Shivaprabhu 2014.09.11 I received an email in early May from GE Global Research regarding a summer...

246

Take a Closer Look at the Brain | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Take a Closer Look at the Brain Take a Closer Look at the Brain Worldwide, more than 450 million people are living with compromised brain health. GE Global Research scientists,...

247

Be a part of something bigger than yourself GE Healthcare  

E-Print Network [OSTI]

, reliability, cost and manufacturability. Work is done using 3D CAD systems. Leading engineering tasks external covers, packaging, mechanisms, cables & harnesses, labelling, and packaging. Knowledge Healthcare, a $17 billion division of General Electric Company. GE Healthcare's broad range of products

Rimon, Elon

248

Cloud-Based Air Traffic Management Announcement | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Works to Bring Air Traffic Management Into "The Cloud" GE Works to Bring Air Traffic Management Into "The Cloud" A global leader in avionics and software development, the General...

249

Sandia National Laboratories: Northrop-Grumman, GE Partnerships...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Experience Northrop-Grumman, GE Partnerships Tap a Wide Range of Sandia Labs Experience Solar Energy Research Institute for India and the United States Kick-Off American Chemical...

250

Steve Duclos, Chief Scientist, GE Global Research, Research Priorities...  

Broader source: Energy.gov (indexed) [DOE]

essionC3Duclos-GE.pdf More Documents & Publications Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Iowa lab gets critical...

251

Wind Turbine Transportation in Toyland | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Edison's Desk > Wind Turbine Transportation in Toyland Wind Turbine Transportation in Toyland Charles (Burt) Theurer 2011.05.27 GE doesn't just make wind turbines. We also deliver...

252

LNG Technology Is in the News | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

LNG Technology Is in the News LNG Technology Is in the News Laura Hudy 2013.02.07 My name is Laura Hudy, and I lead the Thermal Energy Systems team at GE Global Research. One of...

253

Ge quantum dots structural peculiarities depending on the preparation conditions  

Science Journals Connector (OSTI)

EXAFS and XANES spectroscopy methods have been applied in a study of the influence of the preparation conditions on the spatial and electronic structure of Ge/Si heterostructures.

Erenburg, S.

2003-08-28T23:59:59.000Z

254

Notrees 1B (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

B (GE Energy) Wind Farm B (GE Energy) Wind Farm Jump to: navigation, search Name Notrees 1B (GE Energy) Wind Farm Facility Notrees 1B (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Location TX Coordinates 31.9685988°, -99.9018131° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.9685988,"lon":-99.9018131,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

255

Enhanced Oil Recovery to Fuel Future Oil Demands | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to Fuel Future Oil Demands Enhanced Oil Recovery to Fuel Future Oil Demands Trevor Kirsten 2013.10.02 I'm Trevor Kirsten and I lead a team of GE researchers that investigate a...

256

Pushing Super Materials to the Limit | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to the Limit this Spring Break SpringBreakIt - Pushing Super Materials to the Limit this Spring Break Joseph Vinciquerra 2014.04.23 I lead GE's Materials Processing and Testing...

257

Probing the Structure of {sup 74}Ge Nucleus with Coupled-channels Analysis of {sup 74}Ge+{sup 74}Ge Fusion Reaction  

SciTech Connect (OSTI)

We study the fusion reaction of the {sup 74}Ge+{sup 74}Ge system in term of the full order coupled-channels formalism. We especially calculated the fusion cross section as well as the fusion barrier distribution of this reaction using transition matrix suggested by recent Coulomb excitation experiment. We compare the results with the one obtained by coupling matrix based on pure vibrational and rotational models. The present coupled-channels calculations for the barrier distributions obtained using experiment coupling matrix is in good agreement with the one obtained with vibrational model, in contrast to the rotational model. This is indicates that {sup 74}Ge nucleus favor a spherical shape than a deformed shape in its ground state. Our results will resolve the debates concerning the structure of this nucleus.

Zamrun F, Muhammad [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia); Jurusan Fisika FMIPA, Universitas Haluoleo, Kendari, Sulawesi Tenggara, 93232 (Indonesia); Kasim, Hasan Abu [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia)

2010-12-23T23:59:59.000Z

258

Fostering youth engagement:  

E-Print Network [OSTI]

, in all thy ways acknowledge Him and He shall direct thy path. Proverbs 3:5-6 vi ACKNOWLEDGEMENTS My deepest appreciation extends to my graduate advisor and mentor, Dr. Peter A. Witt, who has given me the opportunity to pursue a master?s degree... school teacher, the summer day camp worker, or the advisors I met in college and graduate school. Although many names have been forgotten what they taught me has not. All have played a significant role in my life and my development. They have been...

Maynard, Karen Kimberly

2009-05-15T23:59:59.000Z

259

Understanding, Fostering, and  

E-Print Network [OSTI]

buildings in the world as addressed by Google SketchUp and 3D Warehouse) · problems of a systemic nature

Fischer, Gerhard

260

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer  

SciTech Connect (OSTI)

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

Nie Tianxiao [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Chen Zhigang [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Zou Jin [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland QLD 4072 (Australia)

2011-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Ge interactions on HfO{sub 2} surfaces and kinetically driven patterning of Ge nanocrystals on HfO{sub 2}  

SciTech Connect (OSTI)

Germanium interactions are studied on HfO{sub 2} surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO{sub 2}. Germanium chemical vapor deposition at 870 K on HfO{sub 2} produces a GeO{sub x} adhesion layer, followed by growth of semiconducting Ge{sup 0}. PVD of 0.7 ML Ge (accomplished by thermally cracking GeH{sub 4} over a hot filament) also produces an initial GeO{sub x} layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge{sup 0}. Temperature programed desorption experiments of {approx}1.0 ML Ge from HfO{sub 2} at 400-1100 K show GeH{sub 4} desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO{sub 2} where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO{sub 2} and SiO{sub 2} allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO{sub 2} surfaces that is demonstrated.

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States); Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712-0240 (United States); Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States)

2006-01-15T23:59:59.000Z

262

16 - Microcavities and quantum cascade laser structures based on silicon–germanium (SiGe) nanostructures  

Science Journals Connector (OSTI)

Abstract: This chapter discusses two types of Si-based light-emitting devices based on Ge quantum dots in optical microcavities and SiGe quantum cascade (QC) structures. After reviewing various solutions for Si-based light-emitting devices, the chapter describes the method to enhance light emission from Ge dots through embedding them into optical microcavities. It then reviews SiGe quantum cascade laser (QCL) structures on issues of material growth, electroluminescence from SiGe QC structures, n-type SiGe QC structures, and waveguides for SiGe QCLs.

J. Xia; Y. Shiraki; J. Yu

2011-01-01T23:59:59.000Z

263

A study of an Al-Ge3N4-Ge structure by the method of photo-capacitance-voltage characteristics  

Science Journals Connector (OSTI)

Results are reported of a study of a Ge-Ge3N4...interface by the method of capacitance-voltage characteristics, with the structure irradiated with photons of varied energy. The employed technique revealed trap le...

R. B. Dzhanelidze; M. B. Dzhanelidze; M. R. Katsiashvili

2000-10-01T23:59:59.000Z

264

Location, location, location: larvae position inside the nest is correlated with adult body size in worker bumble-bees (Bombus impatiens)  

Science Journals Connector (OSTI)

...when compared with a system where all workers...aphids (Stern Foster 1997) and ants...size variation (Wheeler 1991). Sometimes...larval competition (Wheeler 1991; Cnaani et...and methods (a) Study organism We obtained...Koppert Biological Systems, Romulus, MI...

2009-01-01T23:59:59.000Z

265

caGrid: design and implementation of the core architecture of the cancer biomedical informatics grid  

Science Journals Connector (OSTI)

......coordinated studies that systematically...in other systems. This use...technologies (Foster and Kesselman...Computer-Based Medical Systems, Special...Saltz, J., Wheeler, M. 2004Application...reservoir studies. Proceedings...Computer-Based Medical Systems, Special...J. and Wheeler,M. (2004...reservoir studies. In Proceedings......

Joel Saltz; Scott Oster; Shannon Hastings; Stephen Langella; Tahsin Kurc; William Sanchez; Manav Kher; Arumani Manisundaram; Krishnakant Shanbhag; Peter Covitz

2006-08-01T23:59:59.000Z

266

Superhumps in a Rarely Outbursting SU UMa-Type Dwarf Nova, HO Delphini  

Science Journals Connector (OSTI)

......discussed in this study, it may be...radial-velocity studies before making...Mattei J. A., Foster G., Szkody...Close Binary Systems, ed. Mineshige S., Wheeler J. C. (Tokyo...Close Binary Systems, ed. Mineshige S., Wheeler J. C. (Tokyo......

Taichi Kato; Daisaku Nogami; Marko Moilanen; Hitoshi Yamaoka

2003-10-25T23:59:59.000Z

267

Magnetic tower outflows from a radial wire array Z-pinch  

Science Journals Connector (OSTI)

......source in a real system could produce knots...This requires 3D MHD studies (e.g. Ouyed...introduced in the system by rotating the wires...press. Akiyama S. , Wheeler J. C., Meier D...Lett., 83, 1982. Foster J. M. , et al...Oran E. S., Wheeler J. C., Wang L......

S. V. Lebedev; A. Ciardi; D. J. Ampleford; S. N. Bland; S. C. Bott; J. P. Chittenden; G. N. Hall; J. Rapley; C. A. Jennings; A. Frank; E. G. Blackman; T. Lery

2005-07-21T23:59:59.000Z

268

Lower-crustal rifting in the Rukwa Graben, East Africa  

Science Journals Connector (OSTI)

......785-803. Foster A.N...African rift system, Tectonics...integrated study of crustal...503-518. Wheeler W.H. , 1994. Structural studies of transform...African rift system, PhD thesis...503-518. Wheeler, W.H...Structural studies of transform...African rift system, PhD thesis......

Ming Zhao; Charles A. Langston; Andrew A. Nyblade; Thomas J. Owens

1997-05-01T23:59:59.000Z

269

Victorin Induction of an Apoptotic/Senescenceâ??like Response in Oats  

Science Journals Connector (OSTI)

...for signal transduction studies were purchased from Sigma...Applied Biosystems, Foster City, CA) operated...Gelprint 2000i imaging system (BioPhotronics, Ann...dismutases Shain L. Wheeler H. Production of ethylene...counteraction by cytokinin Wheeler H. Black H.S. Change...

Duroy A. Navarre; Thomas J. Wolpert

270

Quantitating tissue specificity of human genes to facilitate biomarker discovery  

Science Journals Connector (OSTI)

......28 health states (Wheeler et al., 2003...other methods. This study describes a novel...Applied Biosystems, Foster City, CA, USA...Sequence Detection System. Expression levels...reported a new system, GEPIS, which determines...270:484-487. Wheeler DL , et al. Database......

George Vasmatzis; Eric W. Klee; Dagmar M. Kube; Terry M. Therneau; Farhad Kosari

2007-06-01T23:59:59.000Z

271

Genotyping of 27 Human Papillomavirus Types by Using L1 Consensus PCR Products by a Single-Hybridization, Reverse Line Blot Detection Method  

Science Journals Connector (OSTI)

...Apple C. M. Wheeler Department...Roche Molecular Systems, Inc., Alameda...and cohort studies that HPV infection...Perkin-Elmer, Foster City, Calif...A cohort study of the risk...case-control study in Taiwan...Schiffman M. H. Wheeler C. M. Epidemiology...GP5 primer systems. . Remmink...

P. E. Gravitt; C. L. Peyton; R. J. Apple; C. M. Wheeler

1998-10-01T23:59:59.000Z

272

Cutaneous Model of Invasive Aspergillosis  

Science Journals Connector (OSTI)

...Bunce, C., L. Wheeler, G. Reed, J...I3 Aspergillus Study Group. Medicine...Zaas, W. M. Foster, and J. R. Perfect...Washburn, M. H. Wheeler, and K. J. Kwon-Chung...proven useful in studies of the pathogenesis...novel cutaneous model system should be applicable...

Ronen Ben-Ami; Russell E. Lewis; Konstantinos Leventakos; Jean-Paul Latgé; Dimitrios P. Kontoyiannis

2010-02-09T23:59:59.000Z

273

The R Coronae Borealis stars — III. The pulsation and obscuration minima of RY Sgr  

Science Journals Connector (OSTI)

......Astrophysics Data System 1997MNRAS...theory (Saio & Wheeler 1985) show...Alexander et al. study. These define...Astrophysics Data System 1997MNRAS...Waagen E. 0., Foster E. G., 1994...Saio H., Wheeler J. C., 1985...Astrophysics Data System...

J. W. Menzies; M. W. Feast

1997-02-21T23:59:59.000Z

274

Development and Validation of a 3-Dimensional CFB Furnace Model  

Science Journals Connector (OSTI)

At Foster Wheeler, a three-dimensional CFB furnace model is essential part of knowledge development of CFB furnace process regarding solid mixing, combustion, ... Analyses of field-test results in industrial-scal...

Arl Vepsäläinen; Karl Myöhänen…

2010-01-01T23:59:59.000Z

275

The Putative Hydrolase YycJ (WalJ) Affects the Coordination of Cell Division with DNA Replication in Bacillus subtilis and May Play a Conserved Role in Cell Wall Metabolism  

Science Journals Connector (OSTI)

...George Wright and Neal Brown for generously providing HPUra, Katherine Cunningham for assistance with cloning and protein expression...thank the other members of the Burkholder laboratory, Richard Wheeler and Simon Foster, and generous colleagues for many helpful...

Steven J. Biller; Kyle J. Wayne; Malcolm E. Winkler; William F. Burkholder

2010-12-17T23:59:59.000Z

276

Moores School of Music University of Houston 120 School of Music Bldg. Houston, TX 77204-4017 Phone: (713) 743-3009 Fax: (713) 743-3166 www.uh.edu/music  

E-Print Network [OSTI]

.m. STUDENT RECITAL ­ Dudley Recital Hall Julia Foster, soprano (Studio of Katherine Ciesinski) Sunday, March, 7:30 p.m. FACULTY RECITAL "An Evening in E-Flat" Lawrence Wheeler, viola Abbey Simon, piano Works

Azevedo, Ricardo

277

A Unique Set of 11,008 Onion Expressed Sequence Tags Reveals Expressed Sequence and Genomic Differences between the Monocot Orders Asparagales and Poales  

Science Journals Connector (OSTI)

...Applied Biosystems, Foster City, CA). Analyses...the Entrez retrieval system to specify plant sequences...Food and Agricultural Systems Grant 2001-04434...Ostell, J., and Wheeler, D.L. (2003...Monocotyledons: A Comparative Study. (London: Academic...

Joseph C. Kuhl; Foo Cheung; Qiaoping Yuan; William Martin; Yayeh Zewdie; John McCallum; Andrew Catanach; Paul Rutherford; Kenneth C. Sink; Maria Jenderek; James P. Prince; Christopher D. Town; Michael J. Havey

2003-12-11T23:59:59.000Z

278

Stamina pistilloida, the Pea Ortholog of Fim and UFO, Is Required for Normal Development of Flowers, Inflorescences, and Leaves  

Science Journals Connector (OSTI)

...Biosystems International, Foster City, CA), according to...Superscript preamplification system (Life Technologies) for first-strand...Noel Ellis, Trine Juul, Guy Wheeler, and Caroline Middlebrook...identity Monti L.M. Linkage studies on four induced mutants of...

Scott Taylor; Julie Hofer; Ian Murfet

279

May 15, 2012, Federal Technical Capability Program Face to Face Meeting - Business Case for Accreditation Incentives Â… Challenge the Enterprise to Foster Confidence and Support of TQP Accreditation  

Broader source: Energy.gov (indexed) [DOE]

Accreditation Processes Pros Accreditation Processes Pros Cons Discussion NSO - achieve formal recognition of TQP. NSO - takes considerable effort and commitment to establish infrastructure to achieve and maintain. NSO - establishing a well-performing program and then getting the recognition can foster better formality of ops attitudes with site personnel and can lead to suggestions that improve the local and complex TQP. SSO - Obtain external (of site office) evaluation and accreditation of TQP to assure program meets goals of FTCP. Recent (less than 12 months) accreditation seems to meet the requirements of a CDNS review (evidence is SSO 2009 CDNS Review Report). SSO - Resource cost necessary to prepare for

280

On the Al-Si, Al-Ge, and Al-Ge-Si systems and their application to brazing in high power semiconductor devices  

Science Journals Connector (OSTI)

Results of the Smith thermal analysis studies13 of the Al-Si, Al-Ge, and Al-Ge-Si systems are presented and compared with ... . Isothermal and vertical sections for the Al-Ge-Si system, computed from thermodynami...

F. H. Hayes; R. D. Longbottom; E. Ahmad; G. Chen

1993-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Electron spin resonance observation of an interfacial Ge  

Science Journals Connector (OSTI)

Using electron spin resonance (ESR), we report on the observation of a first Ge dangling bond (DB)-type interface defect in the SiO2/(100)GexSi1?x/SiO2/(100)Si heterostructure manufactured by the condensation technique. The center, exhibiting monoclinic-I (C2v) symmetry with principal g values g1 = 2.0338 ± 0.0003, g2 = 2.0386 ± 0.0006, g3 = 2.0054 is observed in maximum densities of ~6.8 ? 1012 cm?2 of the GexSi1?x/SiO2 interface for x~0.7, the signal disappearing for x outside the 0.45–0.93 range. The notable absence of interfering Si Pb-type centers enables unequivocal spectral analysis. Collectively, the combination of all data leads to depicting the defect as a Ge Pb 1-type center, i.e. not a trigonal basic Ge Pb(0)-type center (). Understanding the modalities of the defect's occurrence may provide an insight into the thus far elusive role of Ge DB defects at Ge/insulator interfaces, and widen our understanding of interfacial DB centers in general.

A Stesmans; P Somers; V V Afanas'ev

2009-01-01T23:59:59.000Z

282

Cedar Creek Wind Farm I (GE) | Open Energy Information  

Open Energy Info (EERE)

GE) GE) Jump to: navigation, search Name Cedar Creek Wind Farm I (GE) Facility Cedar Creek Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Babcock & Brown/BP America Developer Babcock & Brown/BP America Energy Purchaser Xcel Energy Location Weld County east of Grover CO Coordinates 40.873578°, -104.07825° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.873578,"lon":-104.07825,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

283

Greenhouse Gas Services AES GE EFS | Open Energy Information  

Open Energy Info (EERE)

Greenhouse Gas Services AES GE EFS Greenhouse Gas Services AES GE EFS Jump to: navigation, search Name Greenhouse Gas Services (AES/GE EFS) Place Arlington, Virginia Zip 22203-4168 Product Develop and invest in a range of projects that reduce greenhouse gas emissions that produce verified GHG credits. Coordinates 43.337585°, -89.379449° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.337585,"lon":-89.379449,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

284

Top of the World (GE) | Open Energy Information  

Open Energy Info (EERE)

Top of the World (GE) Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Energy Purchaser PacifiCorp Location 4 miles northeast of Glenrock WY Coordinates 42.914132°, -105.691223° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.914132,"lon":-105.691223,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

285

NETL: News Release - GE Sets Benchmarks for Fuel Cell Performance  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

August 8, 2005 August 8, 2005 GE Sets Benchmarks for Fuel Cell Performance Achievements Move Efficient, Clean SOFC Technology Closer to Mainstream Energy Markets TORRANCE, CA - In the race to speed solid oxide fuel cell (SOFC) technology out of niche markets and into widespread commercial use, GE Hybrid Power Generation Systems has kicked fuel cell performance into high gear. Recent advancements have dramatically improved baseline cell performance and accelerate GE's prospects for achieving the system efficiency and cost objectives of DOE's Solid State Energy Alliance (SECA) program. Packing more power into smaller volumes is one of the breakthroughs needed to reduce the cost and expand the use of efficient, environmentally friendly fuel cells. But increasing power density isn't the only goal; as power density increases, fuel cells must continue to efficiently and reliably convert fuel to electric power.

286

Tunneling states in vitreous GeO2s  

Science Journals Connector (OSTI)

Ultrasonic measurements of the attenuation and the velocity variation have been carried out in amorphous GeO2 at low temperature (0.3–10 K) and high frequencies (80–210 MHz). From numerical fits to the tunneling model, the typical parameters of the tunneling states (TS) were determined and compared to those found for vitreous SiO2 . The study reveals that in a-GeO2 , which is considered as a close structural analog to a-SiO2 , although the density of states is found to be very similar in both materials, the coupling between the TS and the phonons is significantly smaller. In the model of coupled tetrahedra as the origin of the TS, this difference can be understood in view of the fact that numerical calculations about the vibrational characteristics of network amorphous solids indicate that the tetrahedra are more decoupled in vitreous GeO2 than in vitreous silica.

Christiane Laermans; Veerle Keppens; Robert Weeks

1997-02-01T23:59:59.000Z

287

Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures  

SciTech Connect (OSTI)

The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

Yablonskiy, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Baidakova, N. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Novikov, A. V. [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation)] [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation); Lobanov, D. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

288

Cedar Creek Wind Farm II (GE) | Open Energy Information  

Open Energy Info (EERE)

Cedar Creek Wind Farm II (GE) Cedar Creek Wind Farm II (GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner BP Wind Energy Developer BP Wind Energy Energy Purchaser Xcel Energy Location Weld County CO Coordinates 40.868652°, -104.092398° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.868652,"lon":-104.092398,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

289

7-GeV Advanced Photon Source Conceptual Design Report  

SciTech Connect (OSTI)

During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

Not Available

1987-04-01T23:59:59.000Z

290

12 GeV detector technology at Jefferson Lab  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana U.

2013-04-01T23:59:59.000Z

291

12 GeV detector technology at Jefferson Lab  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

2013-04-19T23:59:59.000Z

292

Charm Photoproduction Cross Section at 20 GeV  

Science Journals Connector (OSTI)

Forty-seven charm events have been observed in an exposure of the SLAC Hybrid Facility bubble chamber to a 20-GeV backward-scattered laser beam. Thirty-seven events survive all the necessary cuts imposed. Based on this number the total charm cross section is calculated to be 63-28+33 nb.

K. Abe et al. ((Stanford Linear Accelerator Center Hybrid Facility Photon Collaboration))

1983-07-18T23:59:59.000Z

293

SiGeCSi superlattice microcoolers Xiaofeng Fan,a)  

E-Print Network [OSTI]

stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and optoelectronic devices, but their pro- cessing is a bulk technology and is incompatible with inte- grated circuit fabrication process. Solid-state coolers mono- lithically integrated with microelectronic and optoelectronic

294

Radiation effects in Si-Ge quantum size structure (Review)  

SciTech Connect (OSTI)

The article is dedicated to the review and analysis of the effects and processes occurring in Si-Ge quantum size semiconductor structures upon particle irradiation including ion implantation. Comparisons to bulk materials are drawn. The reasons of the enhanced radiation hardness of superlattices and quantum dots are elucidated. Some technological applications of the radiation treatment are reviewed.

Sobolev, N. A., E-mail: sobolev@ua.pt [Universidade de Aveiro, Departamento de Fisica and I3N (Portugal)

2013-02-15T23:59:59.000Z

295

Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis  

Science Journals Connector (OSTI)

A CaF2/Ge/CaF2/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam ... , is 40–50 meV depending on the Ge dot size.

L. V. Sokolov; A. S. Deryabin; A. I. Yakimov…

2004-01-01T23:59:59.000Z

296

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect (OSTI)

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

297

Recovery Act Helps GE in-source Manufacturing | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances for more than 50 years. Like many facilities, it has seen its share of ups-and-downs. Now, after a tough couple of years, the "Appliance Park" facility is making a "manufacturing" comeback -- with the help of the Recovery Act. The plant retooling project, partially funded through a 48C Advanced Energy

298

TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

74 - In the Matter of GE Appliances & Lighting 74 - In the Matter of GE Appliances & Lighting TEE-0074 - In the Matter of GE Appliances & Lighting This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation Program for Consumer Products: Energy Conservation Standards for Refrigerators, Refrigerator-Freezers and Freezers (Refrigerator Efficiency Standards). In its exception request, GE asserts that the firm would suffer a gross inequity if required to adhere to the Refrigerator Efficiency Standards codified at 10 C.F.R. § 430.32. If GE's Application for Exception were granted, GE would receive exception relief from the energy efficiency standard applicable to a new

299

10 Years ON: From the Lab to the Real World in 10 Years | GE...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Biofuels Research at GE's Brazil Technology Center 2-3-10-v Crowdsourcing Software Platform Wins Award 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

300

Characterization of the properties for phase-change material GeSb  

Science Journals Connector (OSTI)

Te-free environmentally friendly GeSb phase-change material has been investigated. Eutectic Ge15Sb85...composition, which has a proper high crystallization temperature of 230°C, is a good candidate for the applic...

Yifeng Gu; Ting Zhang; Zhitang Song; Yanbo Liu; Bo Liu; Songlin Feng

2010-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Large inherent optical gain from the direct gap transition of Ge thin films  

E-Print Network [OSTI]

The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

Wang, Xiaoxin

302

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

303

AVTA: GE Energy WattStation AC Level 2 Charging System Testing...  

Broader source: Energy.gov (indexed) [DOE]

GE Energy WattStation AC Level 2 Charging System Testing Results AVTA: GE Energy WattStation AC Level 2 Charging System Testing Results The Vehicle Technologies Office's Advanced...

304

Phase and Shape Evolutions of Ion Beam Synthesized Ge Based Nanostructures  

E-Print Network [OSTI]

ion beam synthesized Ge nanocrystals," in Department of materials science and engineering:nanoscale engineering. In Chapter 5, ion beam and electronIon Beam Synthesized Ge Based Nanostructures by Swanee Shin Doctor of Philosophy in Engineering –

Shin, Swanee

2009-01-01T23:59:59.000Z

305

GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers  

Broader source: Energy.gov [DOE]

GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...

306

EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois  

Broader source: Energy.gov [DOE]

This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

307

Molecular beam deposition of Al{sub 2}O{sub 3} on p-Ge(001)/Ge{sub 0.95}Sn{sub 0.05} heterostructure and impact of a Ge-cap interfacial layer  

SciTech Connect (OSTI)

We investigated the molecular beam deposition of Al{sub 2}O{sub 3} on Ge{sub 0.95}Sn{sub 0.05} surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge{sub 1-x}Sn{sub x} and Ge/Ge{sub 1-x}Sn{sub x} surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge{sub 1-x}Sn{sub x}/Al{sub 2}O{sub 3} gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge{sub 1-x}Sn{sub x} layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D{sub it}) in the range of 10{sup 12} eV{sup -1} cm{sup -2} in mid gap and higher close to the valence band edge.

Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001 Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001 Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2011-05-09T23:59:59.000Z

308

Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress  

Science Journals Connector (OSTI)

Antimony is the most widely used n-type dopant for Si molecular-beam epitaxy (MBE). However, because of surface segregation during growth, the control of doping profiles remains difficult. The case of Si/Si1-xGex heterostructures is complicated by the existence of stresses, which may affect both the thermodynamics and kinetics of segregation. In this study, we analyze the segregation of Sb resulting from the MBE growth of Si1-xGex/Si(100) heterostructures using secondary ion mass spectrometry as a function of (i) growth temperature (200 °C<~T°<~550 °C), (ii) germanium content (0<~x<~0.2), and (iii) stresses (compressively strained and relaxed layers). We show that Sb segregation: (i) increases with temperature, (ii) increases with Ge content in biaxially compressed layers, (iii) decreases with Ge content in relaxed layers. The temperature variation indicates that Sb surface segregation during growth is kinetically controlled. The contrasting behaviors observed as a function of Ge content in stressed and relaxed layers can thus be explained by a decrease of the segregation enthalpy induced by Ge addition and an increase of near-surface diffusion in stressed layers.

A. Portavoce; I. Berbezier; P. Gas; A. Ronda

2004-04-15T23:59:59.000Z

309

169Tm Mössbauer investigation of the compounds TmFe2Ge2 and TmCu2Ge2  

Science Journals Connector (OSTI)

Temperature-dependent169Tm Mössbauer measurements are reported for the ternary intermetallic compounds TmT2Ge2 (T=Fe, Cu). Based on comparison with results for their TmT2Si2 counterparts, it is verified that the ...

G. A. Stewart; P. W. Thompson; J. M. Cadogan; Hong-Shuo Li

1994-01-01T23:59:59.000Z

310

Atomic structure of amorphous and crystallized Ge{sub 15}Sb{sub 85}  

SciTech Connect (OSTI)

Ge{sub 15}Sb{sub 85} is a promising material for phase-change memory applications owing to its very short crystallization times. As deposited amorphous samples of sputter deposited Ge{sub 15}Sb{sub 85} have been investigated by extended x-ray absorption fine structure (EXAFS) measurements on both, Sb and Ge K absorption edges. After crystallizing the specimen, x-ray diffraction (XRD) and EXAFS measurements have been performed to analyze the atomic structure at different annealing conditions. Thus, experimental techniques focusing on the long range order as well as on the local order have been combined. Sb atoms have on average 3.2(2) nearest neighbors, while Ge atoms have 4.0(3). The Ge-Ge and Ge-Sb bond lengths are determined to 2.46(2) and 2.66(1) A, respectively and agree well with those observed in the amorphous phase of the common phase-change material Ge{sub 2}Sb{sub 2}Te{sub 5}. After crystallizing the sample at 250 deg. C, very different EXAFS spectra with modified Ge-Sb bond lengths are observed. The higher concentration of Ge neighbors at the Ge edge as compared to the as-deposited sample is indicative for phase separation. For the corresponding sample, XRD does not show reflections of Ge, which indicates that the agglomeration of Ge is amorphous or below the coherence length of the x-radiation. The EXAFS spectrum shows a superposition of two phases: one with bond lengths which agree with sp{sup 3}-hybridized Ge [2.43(1) A] and another one with longer Ge-Ge bond lengths [2.79(8) A]. This result can be explained by phase separation in the material.

Zalden, Peter; Eijk, Julia van; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, 52056 Aachen (Germany); Bichara, Christophe [CiNaM-Centre Interdisciplinaire de Nanoscience de Marseille, Campus de Luminy, 13288 Marseille (France); Braun, Carolin; Bensch, Wolfgang [Institut fuer Anorganische Chemie, Universitaet Kiel, Max-Eyth Str. 2, 24118 Kiel (Germany)

2010-05-15T23:59:59.000Z

311

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te  

E-Print Network [OSTI]

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te alloys: Density functional functional simulations, Ge/Sb/Te alloys. Corresponding author: e-mail r.jones@fz-juelich.de, Phone: +49 discussed the alloy As30Ge10Si12Te48, and Te-based alloys have been well represented ever since. Alloys

312

An integrated study of the Grayburg/San Andres Reservoir, Foster and South Cowden Fields, Ector County, Texas. Quarterly report, July--September, 1996  

SciTech Connect (OSTI)

During the third quarter, the Foster No. 11 was drilled to test the simulation and contact additional reserves in the San Andres and the Lower Grayburg. The well was located in the Southwest quarter of Section 36 to take advantage of the lack of producing wells in the West half of the Southwest quarter of the section. A full suite of logs: Compensated Neutron, Three Detector Density, Long Spacing Sonic, Dual Lateralog, Micro-CFL, Spectral Gamma Log and Mud Log were run. Additionally, a Repeat Formation Tester was employed in an effort to obtain reservoir pressure data. Eighteen tests were attempted, with six good tests, and two formation fluid samples recovered. The results indicate that the San Andres and the Lower Grayburg are in different pressure regimes, and the A1 Zone is depleted. Core was cut in the Lower Grayburg and San Andres to provide rock property information for these two intervals. Based on the log calculations and core recovery, the initial No. 11 Foster completion was attempted in the San Andres. The interval from 4,238 feet(-1,290) to 4,323 feet(-1375) was perforated and acidized. Rates of 3--4 BO and 6--8 BWPD were established. Because water zones were indicated both above and below the completed interval, the fracture completion had to be designed to minimize fracturing into these zones. A Mini Frac was attempted with 3,500 gallons cross-link gel and 6,000 pounds of 100 mesh sand followed by 2,000 gallons nitrified gel and 6,000 pounds of sand. At the end of the quarter, the well was on test.

Trentham, R.C.; Weinbrandt, R.; Robertson, W.

1997-02-14T23:59:59.000Z

313

Superlattice-like Ge8Sb92/Ge thin films for high speed and low power consumption phase change memory application  

Science Journals Connector (OSTI)

The amorphous-to-crystalline transitions of superlattice-like Ge8Sb92/Ge thin films were investigated through in situ film resistance measurement. X-ray reflectivity was used to measure the density change before and after phase change. The superlattice-like structure of the thin films was confirmed by using transmission electron microscopy. A picosecond laser pump–probe system was used to study the phase change speed. Phase change memory cells based on the SLL [Ge8Sb92(4 nm)/Ge(3 nm)]7 thin films were fabricated to test and verify the switching speed and operation consumption.

Yifeng Hu; Xiaoyi Feng; Jiwei Zhai; Ting Wen; Tianshu Lai; Sannian Song; Zhitang Song

2014-01-01T23:59:59.000Z

314

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Proposed Penalty (2013-SE-4901) Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Watermark: Proposed Penalty (2011-SW-2908) Act One: NPCP (2013-CE-49001)

315

Capricorn Ridge (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

Energy) Wind Farm Energy) Wind Farm Jump to: navigation, search Name Capricorn Ridge (GE Energy) Wind Farm Facility Capricorn Ridge (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location TX Coordinates 31.838061°, -100.923965° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.838061,"lon":-100.923965,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

316

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect (OSTI)

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular-beam epitaxy of Ge on Ge(001) and subsequent annealing. We find that there is a critical ''kinetic roughening'' temperature (375 /sup 0/C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with a third-order power-law ripening mechanism.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1989-03-01T23:59:59.000Z

317

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect (OSTI)

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular beam epitaxy of Ge on Ge (001) and subsequent annealing. We find that there is a critical ''growth roughening'' temperature (375 C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with an Ostwald-like ripening mechanism. 4 figs.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1988-01-01T23:59:59.000Z

318

Proton-proton Scattering Above 3 GeV/c  

SciTech Connect (OSTI)

A large set of data on proton-proton differential cross sections, analyzing powers and the double-polarization parameter A{sub NN} is analyzed employing the Regge formalism. We find that the data available at proton beam momenta from 3 GeV/c to 50 GeV/c exhibit features that are very well in line with the general characteristics of Regge phenomenology and can be described with a model that includes the {rho}, {omega}, f{sub 2}, and a{sub 2} trajectories and single-Pomeron exchange. Additional data, specifically for spin-dependent observables at forward angles, would be very helpful for testing and refining our Regge model.

A. Sibirtsev, J. Haidenbauer, H.-W. Hammer S. Krewald ,Ulf-G. Meissner

2010-01-01T23:59:59.000Z

319

Meson Spectroscopy at JLab@12 GeV  

SciTech Connect (OSTI)

Meson, being the simplest hadronic bound system, is the ideal "laboratory" to study the interaction between quarks, to understand the role of the gluons inside hadrons and to investigate the origin of color confinement. To perform such studies it is important to measure the meson spectrum, with precise determination of resonance masses and properties, looking for rare qbar q states and for unconventional mesons with exotic quantum numbers (i.e. mesons with quantum numbers that are not compatible with a qbar q structure). With the imminent advent of the 12 GeV upgrade of Jefferson Lab a new generation of meson spectroscopy experiments will start: "Meson-Ex" in Hall B and "GLUEX" in Hall D. Both will use photo-production to explore the spectrum of mesons in the light-quark sector, in the energy range of few GeVs.

Celentano, Andrea [INFN-GENOVA

2013-03-01T23:59:59.000Z

320

Inclusive photoproduction of strange baryons at 20 GeV  

Science Journals Connector (OSTI)

Cross sections are presented for the inclusive photoproduction of KS0, ?, ?¯, ?-, ?¯ -, ?0, and ?*±(1385) at 20 GeV. An upper limit to ?- production is also given. The data come from 284 000 hadronic events photoproduced in the SLAC 1-m hydrogen-bubble-chamber hybrid facility exposed to a nearly monochromatic, polarized 20-GeV backscattered photon beam. A comparison of the KS0, ?, ?¯, and ?- rates per inelastic event to ?±p data show that ?p rates are consistent with being higher than the ?±p rates, providing evidence of an ss¯ component of the photon. The pair cross sections for KS0KS0, KS0?, KSo?¯, and ??¯ are presented. The xF distributions of the ?, ?¯, and ?- are compared to a quark-diquark fusion model, giving information on strange-baryon photoproduction mechanisms.

K. Abe et al.

1985-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Ge/Si core/multi shell heterostructure FETs  

SciTech Connect (OSTI)

Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

322

Structure of odd Ge isotopes with 40 < N < 50  

SciTech Connect (OSTI)

We have interpreted recentlymeasured experimental data of {sup 77}Ge, and also for {sup 73,75,79,81}Ge isotopes in terms of state-of-the-art shell-model calculations. Excitation energies, B(2) values, quadrupole moments and magnetic moments are compared with experimental data when available. The calculations have been performed with the recently derived interactions, namely with JUN45 and jj44b for f{sub 5/2pg9/2} space. We have also performed calculation for fpg{sub 9/2} valence space using an fpg effective interaction with {sup 48}Ca core and imposing a truncation to study the importance of the proton excitations across the Z = 28 shell in this region. The predicted results of jj44b interaction are in good agreement with experimental data.

Srivastava, P. C., E-mail: praveen.srivastava@nucleares.unam.mx; Ermamatov, M. J. [Universidad Nacional Autonoma de Mexico, Instituto de Ciencias Nucleares (Mexico)

2013-06-15T23:59:59.000Z

323

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

324

Partners for progress in HVDC: GE and EPRI  

SciTech Connect (OSTI)

Since the first solid-state HVDC system was installed at Eel River in 1971, there have been enormous strides in component capability and control algorithm sophistication. Benefits include reduction in cost and power losses, smaller size and improved system stability - all achieved with the same high reliability. These improvements have been achieved through development programs which required a commitment of considerable resources made possible because GE considers HVDC an important area of growth and because EPRI has consistently supported HVDC projects. Some developments from the GE-EPRI partnership for progress in HVDC technology are already being offered and others are in the process of commercialization. These on-going programs assure that future improvements will continue to make HVDC a more attractive alternative for meeting the utility industry's needs.

Damsky, B.L. (HVDC Projects Operation, Collingdale, PA); Ladden, J.M.

1983-01-01T23:59:59.000Z

325

Milford Wind Corridor Phase I (GE Energy) | Open Energy Information  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » Milford Wind Corridor Phase I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner First Wind Developer First Wind Energy Purchaser Southern California Public Power Authority Location Milford UT Coordinates 38.52227°, -112.935262° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.52227,"lon":-112.935262,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

326

GeV emission from Gamma-Ray Burst afterglows  

E-Print Network [OSTI]

We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

A. Panaitescu

2008-01-10T23:59:59.000Z

327

Axial Ge/Si nanowire heterostructure tunnel FETs.  

SciTech Connect (OSTI)

Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01T23:59:59.000Z

328

Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition  

SciTech Connect (OSTI)

The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E. [Materials Science Department and the Frederick-Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Ave., Urbana, Illinois 61801 (United States)

2011-05-01T23:59:59.000Z

329

Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge  

Science Journals Connector (OSTI)

This work demonstrates that it is possible to synthesize crystallized Ge nanostructures directly in an aqueous medium under ambient conditions by using widely available GeO2 (in the form of germanate ions) as a precursor. The reaction of germanate ions with NaBH4 in an aqueous medium resulted in highly hydrogenated Ge that could be transformed into crystallized Ge after an air-drying treatment. The NaBH4/GeO2 molar ratio, reaction time and drying temperature were optimized for the synthesis of crystallized Ge products. Furthermore, the reaction time has an influence on the size and shape of the final crystallized Ge products. A reaction time of 12 h could result in crystallized Ge powder samples that contain ultra-small (5–20 nm) particles and larger (50–100 nm) particles. By controlling the reaction time to 24 h, a Ge powder product consisting of worm-like crystallized Ge nanostructures with diameters of 10–80 nm and lengths up to 1000 nm was obtained. The possible reaction and growth mechanisms involved in this method were investigated. This new synthetic route may be a good candidate for synthesizing a wide variety of crystallized Ge nanomaterials and devices due to its low cost, low safety risk, facileness, high yield (above 70% and in gram scale) and convenience for adding other chemicals (i.e. dopants or morphology modifying agents) into the reaction system.

Chengbin Jing; Xiaodan Zang; Wei Bai; Junhao Chu; Aiyun Liu

2009-01-01T23:59:59.000Z

330

Band-structure calculations for Ba6Ge25 and Ba4Na2Ge25 clathrates  

Science Journals Connector (OSTI)

Electronic band structures for Ba6Ge25 and Ba4Na2Ge25 clathrates are calculated using linear muffin-tin orbital method within the local-density approximation. It is found that barium states strongly contribute to the density of states at the Fermi level and thus can influence the transport properties of the compounds. A sharp peak of the density of states is found just at the Fermi level. It is also shown that the shifting of barium atoms toward experimentally deduced split positions in Ba6Ge25 produces a splitting of this peak which may be interpreted as a band Jahn-Teller effect. If the locking of the barium atoms at the observed structural phase transition is assumed, this reduction of the density of states at the Fermi level can account for the experimentally observed decrease of the magnetic susceptibility and electrical resistivity at the phase transition, and the values of density of states are in agreement with low-temperature specific-heat measurements and variation of superconducting transition temperature with pressure.

Ivica Zerec; Alexander Yaresko; Peter Thalmeier; Yuri Grin

2002-07-29T23:59:59.000Z

331

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum  

Science Journals Connector (OSTI)

The fission neutron spectrum averaged cross-sections for the reactions70Ge(n,p)70Ga and74Ge(n,p)74Ga have been determined. The averages of four determinations are, respectively, (3.10±0.30) mb and (0.00938±0.0005...

I. M. Cohen; A. J. Kestelman; J. C. Furnari…

1996-03-14T23:59:59.000Z

332

Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature  

SciTech Connect (OSTI)

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeN{sub x}/Ge interface properties. The GeN{sub x}/Ge formed at room temperature and treated by PMA at 400 deg. C exhibits the best interface properties with an interface trap density of 1 x 10{sup 11 }cm{sup -2 }eV{sup -1}. The GeN{sub x}/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

Fukuda, Yukio; Otani, Yohei [Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292 (Japan); Okamoto, Hiroshi; Iwasaki, Takuro; Ono, Toshiro [Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561 (Japan)

2011-09-26T23:59:59.000Z

333

Electrical, optical, and thermal properties of Sn-doped phase change material Ge2Sb2Te5  

Science Journals Connector (OSTI)

In this article, effect of Sn on the electrical, optical, and thermal properties of Ge2Sb2Te5 is studied. Ge2Sb2Te5, Ge1.55Sb2Te5Sn0.45, and Ge1.1Sb2Te5Sn0.9...alloys are prepared by melt quenching technique and ...

Gurinder Singh; Aman Kaura; Monika Mukul; S. K. Tripathi

2013-01-01T23:59:59.000Z

334

Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films  

SciTech Connect (OSTI)

Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.50–1.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

2014-03-18T23:59:59.000Z

335

Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature  

Science Journals Connector (OSTI)

Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750°C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation

J.P. Liu; M.Y. Kong; D.D. Huang; J.P. Li; D.Z. Sun

1998-01-01T23:59:59.000Z

336

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect (OSTI)

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

337

Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers  

SciTech Connect (OSTI)

One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); Lei, Xiao-Wu, E-mail: xwlei_jnu@163.com [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

2013-10-15T23:59:59.000Z

338

Deletion of ?-Strand and ?-Helix Secondary Structure in Normal Prion Protein Inhibits Formation of Its Protease-Resistant Isoform  

Science Journals Connector (OSTI)

...Purification and structural studies of a major scrapie...Prusiner M. Scott D. Foster K. M. Pan D. Groth...DeArmond Transgenetic studies implicate interactions...D. Groth S. F. Wheeler D. J. Harvey M...Scott D. Groth D. Foster M. Torchia S. L...Prusiner Structural studies of the scrapie prion...

Ina Vorberg; Kaman Chan; Suzette A. Priola

2001-11-01T23:59:59.000Z

339

Maternal effects in cooperative breeders: from hymenopterans to humans  

Science Journals Connector (OSTI)

...above wherein the studies of maternal effects...effects in such systems, before describing...aphids (Stern Foster 1997); Polistinae...eusocial-type systems, in contrast...insect-type systems is the astonishing...characters (Wheeler 1986; Holldobler...1997; Stern Foster 1997; Jemielity...

2009-01-01T23:59:59.000Z

340

A word in the hand: action, gesture and mental representation in humans and non-human primates  

Science Journals Connector (OSTI)

...environment that would foster the development of...hope that future studies on primates will...development. Such studies will not only help...the primate mirror system has been done on...We thank J. G. Foster, K. Brown and M...MA: MIT Press. 2 Wheeler, M. 2005 Reconstructing...

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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341

Characterization of the Escherichia coli O157:H7 Sakai GadE Regulon  

Science Journals Connector (OSTI)

...However, a recent study demonstrated...kb (J. W. Foster and A. Sayed...Although the GAD system and GadE in...O157:H7. A study conducted by...Phadke, D. Wheeler, S. Kalantre...genome-wide expression studies. J. Microbiol...and J. W. Foster. 2001. Escherichia...acid resistance system in Escherichia...

Sivapriya Kailasan Vanaja; Teresa M. Bergholz; Thomas S. Whittam

2008-12-29T23:59:59.000Z

342

Supercritical Fluid Extraction of Wood Pulps  

Science Journals Connector (OSTI)

......capillary column inlet system which was main tained...great concern in this study because (a) their relative...McNally and J.R. Wheeler. J. Chromatogr. 447...Chaplin, and N.R. Foster. J. Supercrit. Fluids...Wells, and N.R. Foster. J. Supercrit. Fluids......

A.J. Sequeira; L.T. Taylor

1992-10-01T23:59:59.000Z

343

Evolutionary theory of bacterial quorum sensing: when is a signal not a signal?  

Science Journals Connector (OSTI)

...future is experimental studies that determine the costs...ijmm.2004.06.022 . Foster, K.R , Wenseleers...S, Egland, P.G, Foster, J.S, Palmer, R...bacterial luminescent system. J. Bacteriol. 104...2003 . Telford, G , Wheeler, D, Williams, P...

2007-01-01T23:59:59.000Z

344

Social intelligence, human intelligence and niche construction  

Science Journals Connector (OSTI)

...with our complex systems of communication...expensive brains (Aiello Wheeler 1995). As group...world. 1 Indeed, Foster Ratnieks (2005...and the digestive system in human and primate...evan.10108 . Foster, K , Ratnieks...theory and empirical studies. Annu. Rev. Anthropol...

2007-01-01T23:59:59.000Z

345

Bibliography and Index to the Literature on Gas Chromatography: January 1, 1963 to November 1, 1963  

Science Journals Connector (OSTI)

......169 QUANTITATIVE STUDY OF THE INTER...K. W., and Foster, A. B., J...IN-STREAM CONVERSION SYSTEMS FOR MEASURING...H. P., and Wheeler, Ralph J...418 PRELIMINARY STUDIES OF MOVING- BED...LITERATURE RETRIE- VAL SYSTEM FOR GAS CHROMATOGRAPHY...TRITIATED WATER, Foster, Daniel W......

Seaton T. Preston; Jr.; Geneva Hyder; Mignon Gill

1963-12-01T23:59:59.000Z

346

Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height  

SciTech Connect (OSTI)

In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58?eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

Lin, Guangyang; Tang, Mengrao; Li, Cheng, E-mail: lich@xmu.edu.cn; Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)] [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

2013-12-16T23:59:59.000Z

347

Forward charge asymmetry in 20-GeV gammap reactions  

Science Journals Connector (OSTI)

Fast forward particles photoproduced in 20-GeV interactions on a hydrogen target are shown to be preferentially positive, the asymmetry increasing with transverse momentum and Feynman x. Evidence is given that this effect is not due to forward-going target fragments. A model in which production from the photon of a forward-going spectator u is preferred over a ?, due to a higher probability for interactions of antiquarks with the proton constituents, is shown to be qualitatively consistent with the data.

V. R. O’Dell et al.

1987-07-01T23:59:59.000Z

348

Diamond turning of Si and Ge single crystals  

SciTech Connect (OSTI)

Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

Blake, P.; Scattergood, R.O.

1988-12-01T23:59:59.000Z

349

6 GeV light source project cost estimating procedure  

SciTech Connect (OSTI)

To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV Light Source, the following procedure will be used by all the task groups. The procedure uses a Work Breakdown Structure (VBS) to break down the project into manageable, easy to estimate, components. The project is first broken down into major tasks or categories. Then each major division is continuously subdivided until the desired level of detail is achieved. This can be shown best by using the example of the WBS of the Aladdin Upgrade Project, excerpts of which are included in Appendix A.

NONE

1985-10-23T23:59:59.000Z

350

An 8-GeV Synchrotron-Based Proton Driver  

SciTech Connect (OSTI)

In January 2002, the Fermilab Director initiated a design study for a high average power, modest energy proton facility. Such a facility is a possible candidate for a construction project in the U.S. starting in the middle of this decade. The key technical element is a new machine, dubbed the ''Proton Driver,'' as a replacement of the present Booster. The study of an 8-GeV synchrotron-based proton driver has been completed and published. This paper will give a summary report, including machine layout and performance, optics, beam dynamics issues, technical systems design, civil construction, cost estimate and schedule.

Weiren Chou

2003-06-04T23:59:59.000Z

351

Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment  

Science Journals Connector (OSTI)

In this paper, a novel nitrogen plasma immersion treatment (NNPIT) with accelerating power for Ge surface passivation is presented and compared with conventional nitrogen plasma immersion treatment (NPIT). Results show that the Ge–N bond formed at a surface by NPIT can suppress the growth of Ge suboxide during high-K dielectric deposition. As for NNPIT, more nitrogen plasma drifts to the Ge surface, which is induced by the accelerating electric field, to enhance the dangling bond passivation, and thus the NNPIT method can further suppress Ge suboxide growth during high-K dielectric deposition. As a result, the C–V characteristics in terms of a flat-band voltage, hysteresis and interface state density can be significantly improved, which is promising for high performance Ge MOSFETs fabrication.

Meng Lin; Ming Li; Xia An; Quanxin Yun; Min Li; Zhiqiang Li; Pengqiang Liu; Xing Zhang; Ru Huang

2013-01-01T23:59:59.000Z

352

Germanium diffusion during HfO{sub 2} growth on Ge by molecular beam epitaxy  

SciTech Connect (OSTI)

The authors study the Ge diffusion during HfO{sub 2} growth by molecular beam epitaxy on differently in situ prepared germanium substrates and at different growth temperatures. While HfO{sub 2} layers grown directly on Ge do not show any germanium contamination, oxygen rich interfacial layers such as GeO{sub x} or GeO{sub x}N{sub y} partly dissolve into the HfO{sub 2} layer, giving rise to high Ge contamination (from 1% to 10%). The use of nitridated interfacial layers does not prevent Ge diffusion into the HfO{sub 2} during the growth process because of the high oxygen content present in the nitridated germanium layer.

Ferrari, S.; Spiga, S.; Wiemer, C.; Fanciulli, M.; Dimoulas, A. [Laboratorio MDM-INFM-CNR, Via Olivetti, 2 Agrate Brianza, Milano 20041 (Italy); MBE Laboratory, Institute of Materials Science, DEMOKRITOS National Center for Scientific Research, 153 10 Athens (Greece)

2006-09-18T23:59:59.000Z

353

Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy  

SciTech Connect (OSTI)

The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

Miotti, Leonardo; Bastos, Karen P.; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis [Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States); Instituto de Quimica, Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre (Brazil); Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

2010-07-15T23:59:59.000Z

354

Observation of optical spin injection into Ge-based structures at room temperature  

SciTech Connect (OSTI)

Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan)] [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)] [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)

2013-06-17T23:59:59.000Z

355

Structural and magnetic properties of Ge{sub 1-x}Mn{sub x} thin films grown on Ge (001) substrates  

SciTech Connect (OSTI)

We investigate the structural and magneto-optical properties of Mn-doped Ge (Ge{sub 1-x}Mn{sub x}) films with self-organized nanocolumns, grown on Ge (001) substrates by molecular beam epitaxy (MBE), in which the substrate temperature (T{sub S}) and growth rate (R{sub G}) are varied. Transmission electron microscopy (TEM) observations and magnetic circular dichroism (MCD) measurements reveal that Mn-rich nanocolumnar precipitation is formed in the Ge{sub 1-x}Mn{sub x} films grown at T{sub S} {<=} 100 deg. C, with keeping the size and spacing. At higher T{sub S} ({>=}150 deg. C), ferromagnetic Mn{sub 5}Ge{sub 3} clusters are formed. It is also found that the Mn distribution in the Ge{sub 1-x}Mn{sub x} films can be controlled: By lowering T{sub S} or increasing R{sub G}, the Mn content x{sub nc} in the nanocolumns decreases and Mn atoms are more distributed into the Ge matrix, and eventually the magnetic properties are changed. The formation of the nanocolumns is explained by the spinodal decomposition in the layer-by-layer growth mode. We analyzed the periodicity and Mn content x{sub nc} of nanocolumns by using the Cahn-Hilliard equation.

Yada, Shinsuke; Nam Hai, Pham; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Sugahara, Satoshi [Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-14 Nagatsuta, Yokohama, Kanagawa 226-8502 (Japan)

2011-10-01T23:59:59.000Z

356

Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells  

SciTech Connect (OSTI)

Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30?×?10{sup 18}?cm{sup ?3}.

Fan, W. J., E-mail: ewjfan@ntu.edu.sg [NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2013-11-14T23:59:59.000Z

357

Vermont Yankee's benefits and concerns operating with Axially zoned GE9 fuel  

SciTech Connect (OSTI)

Vermont Yankee (VY) is a 368-assembly, D-lattice, boiling water reactor (BWR)/4. The current cycle 16 contains 252 GE9 assemblies with axial zoning of gadolinium and enrichment, 112 GE8 assemblies with axially zoned gadolinium, and 4 Siemens 9 x 9-IX lead qualification assemblies. In this paper, the performance of the GE9-dominated core is evaluated against previous cores containing less sophisticated fuel designs.

Woehlke, R.A. (Yankee Atomic Electric Co., Bolton, MA (United States))

1993-01-01T23:59:59.000Z

358

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I  

E-Print Network [OSTI]

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I M. Agostini,14 M. Allardt,3 E and a lower limit is derived for the half-life of neutrinoless double beta decay of 76 Ge, T0 1/2> 2.1 · 1025 double beta decay of the isotope 76 Ge. Data con- sidered in the present analysis have been collected

359

12 GeV Upgrade Project - Cryomodule Production  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility (Jefferson Lab) is producing ten 100+MV SRF cryomodules (C100) as part of the CEBAF 12 GeV Upgrade Project. Once installed, these cryomodules will become part of an integrated accelerator system upgrade that will result in doubling the energy of the CEBAF machine from 6 to 12 GeV. This paper will present a complete overview of the C100 cryomodule production process. The C100 cryomodule was designed to have the major components procured from private industry and assembled together at Jefferson Lab. In addition to measuring the integrated component performance, the performance of the individual components is verified prior to being released for production and assembly into a cryomodule. Following a comprehensive cold acceptance test of all subsystems, the completed C100 cryomodules are installed and commissioned in the CEBAF machine in preparation of accelerator operations. This overview of the cryomodule production process will include all principal performance measurements, acceptance criterion and up to date status of current activities.

J. Hogan, A. Burrill, G.K. Davis, M.A. Drury, M. Wiseman

2012-07-01T23:59:59.000Z

360

Phase-change optical recording materials based on GeSb  

Science Journals Connector (OSTI)

GeSb based materials are investigated for phase-change optical recording. Physical properties and amorphization / crystallization behavior are determined. Recording characteristics are...

Dimitrov, Dimitre

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

€18.5 Million in New Research Program Funding Announced, GE...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

362

Using 3D Painting to Build and Repair Parts | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a part or add material to repair an existing part. Cold spray is part of GE's expanded additive manufacturing toolkit. nteneh Kebbede, Manager of the Coating and Surface...

363

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy  

E-Print Network [OSTI]

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byrate enhancement is due to a photo-chemical process. Thenanocrystals can be rapidly photo-oxidized. This oxidation

2008-01-01T23:59:59.000Z

364

Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces  

SciTech Connect (OSTI)

We report on the phase separation in Au-Ge system leading to the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions ({approx_equal}3 x 10{sup -10} mbar) on clean Si(100) surfaces. For this study, {approx_equal}2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy. Thermal annealing was carried out inside the UHV chamber at temperature {approx_equal}500 deg. C and following this, nearly square shaped Au{sub x}Si{sub 1-x} nano structures of average length {approx_equal}48 nm were formed. A {approx_equal}2 nm Ge film was further deposited on the above surface while the substrate was kept at a temperature of {approx_equal}500 deg. C. Well ordered Au-Ge nanostructures where Au and Ge residing side by side (lobe-lobe structures) were formed. In our systematic studies, we show that, gold-silicide nanoalloy formation at the substrate (Si) surface is necessary for forming phase separated Au-Ge bilobed nanostructures. These results show that the Au-Ge bonding is unstable in nature. Electron microscopy (TEM, STEM-EDS, SEM) studies were carried out to determine the structure of Au-Ge nano systems. Rutherford backscattering spectrometry measurements show gold inter-diffusion into substrate while it is absent for Ge.

Rath, A.; Dash, J. K.; Juluri, R. R.; Satyam, P. V. [Institute of Physics, Sachivalaya Marg, Bhubaneswar-751005 (India); Schowalter, Marco; Mueller, Knut; Rosenauer, A. [Institute of Solid State Physics, University of Bremen, D-28359 Bremen (Germany)

2012-05-15T23:59:59.000Z

365

Chemical states and electronic structure of a HfO(-2) / Ge(001) interface  

SciTech Connect (OSTI)

We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.

Seo, Kang-ill; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; /SLAC, SSRL; Saraswat, Krishna C.; /Stanford U., Elect.

2005-05-04T23:59:59.000Z

366

GE to DOE General Counsel; Re:Request for Comment on Large Capacity...  

Office of Environmental Management (EM)

Clothes Washers GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer...

367

E-Print Network 3.0 - amorphous ge bipolar Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

at Stony Brook, Department of Electrical Engineering and Computer Engineering, Optoelectronics Research Group Collection: Engineering 10 A New SiGe Base Lateral PNM Schottky...

368

Positron-annihilation measurements of vacancy formation in Ni and Ni(Ge)  

SciTech Connect (OSTI)

Vacancy formation in Ni and in dilute Ni(Ge) alloys was studied under thermal equilibrium conditions using positron-annihilation Doppler broadening. A monovacancy formation enthalpy of 1.8 +- 0.1 eV was determined for pure Ni; combining this result with that from previous tracer self-diffusion measurements, a monovacancy migration enthalpy of 1.1 +- 0.1 eV was also deduced. Analysis of the vacancy formation measurements in Ni(0.3 at.% Ge) and Ni(1 at.% Ge) yielded a value for the vacancy-Ge binding enthalpy of 0.20 +- 0.04 eV.

Smedskjaer, L.C.; Fluss, M.J.; Legnini, D.G.; Chason, M.K.; Siegel, R.W.

1982-03-01T23:59:59.000Z

369

Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character  

SciTech Connect (OSTI)

The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64 variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge]{sup 6-}/[Ge-{sup ....}Ge-{sup ....}Ge-{sup ....}Ge]{sup 8-}{r_brace}{r_reversible}{l_brace}[Ge=Ge]{sup 4-}/[Ge-Ge-Ge-Ge]{sup 10-}{r_brace}. - Graphical abstract: The structure of Ba{sub 3}Sn{sub 2} contains Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains are the predominant features in Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6}. Their crystal structures cannot be rationalized according to the (8-N) rule. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, the germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. Highlights: Black-Right-Pointing-Pointer The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} have been synthesized. Black-Right-Pointing-Pointer In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as dumbbells and four-membered atom chains. Black-Right-Pointing-Pointer Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif. Black-Right-Pointing-Pointer The chemical bonding situation within these structures is discussed.

Siggelkow, Lisa; Hlukhyy, Viktor [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

2012-07-15T23:59:59.000Z

370

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge  

Science Journals Connector (OSTI)

The effect of Ge deposition rate on the morphology and structural properties of self-assembled Ge/Si(001) islands was studied. Ge/Si(001) layers were grown by solid-source molecular-beam epitaxy at 500?°C. We adjusted the Ge coverage, 6 monolayers (ML), and varied the Ge growth rate by a factor of 100, R = 0.02–2 ML s?1, to produce films consisting of hut-shaped Ge islands. The samples were characterized by scanning tunnelling microscopy, Raman spectroscopy, and Rutherford backscattering measurements. The mean lateral size of Ge nanoclusters decreases from 14.1 nm at R = 0.02 ML s?1 to 9.8 nm at R = 2 ML s?1. The normalized width of the size distribution shows non-monotonic behaviour as a function of R and has a minimum value of 19% at R = 2 ML s?1. Ge nanoclusters fabricated at the highest deposition rate demonstrate the best structural quality and the highest Ge content (~0.9).

A I Yakimov; A I Nikiforov; A V Dvurechenskii; V V Ulyanov; V A Volodin; R Groetzschel

2006-01-01T23:59:59.000Z

371

Magnetic X-Ray Scattering Study of GdCo2Ge2 and NdCo2Ge2  

SciTech Connect (OSTI)

The results of magnetic x-ray resonant exchange scattering (XRES) experiments are important to the development of an understanding of magnetic interactions in materials. The advantages of high Q resolution, polarization analysis, and the ability to study many different types of materials make it a vital tool in the field of condensed matter physics. Though the concept of XRES was put forth by Platzman and Tzoar in 1970, the technique did not gain much attention until the work of Gibbs and McWhan et al. in 1988. Since then, the technique of XRES has grown immensely in use and applicability. Researchers continue to improve upon the procedure and detection capabilities in order to study magnetic materials of all kinds. The XRES technique is particularly well suited to studying the rare earth metals because of the energy range involved. The resonant L edges of these elements fall between 5-10 KeV. Resonant and nonresonant x-ray scattering experiments were performed in order to develop an understanding of the magnetic ordering in GdCo{sub 2}Ge{sub 2} and NdCo{sub 2}Ge{sub 2}.

William Good

2002-08-27T23:59:59.000Z

372

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

SciTech Connect (OSTI)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

373

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

374

Second harmonic generation from Ge doped SiO{sub 2} (Ge{sub x}(SiO{sub 2}){sub 1?x}) thin films grown by sputtering  

SciTech Connect (OSTI)

Second-order nonlinear optical properties of sputter-deposited Ge-doped SiO{sub 2} thin films were investigated. It was shown that the second-order nonlinearity of SiO{sub 2}, which vanishes in the electric-dipole approximation due to the centrosymmetric structure, can be significantly enhanced by Ge doping. The observed maximum value of d{sub 33} was 8.2 pm/V, which is 4 times larger than d{sub 22} of ?-BaB{sub 2}O{sub 4} crystal. Strong correlation was observed between the d{sub eff} values and the electron spin resonance signals arising from GeP{sub b} centers, suggesting that GeP{sub b} centers are the most probable origin of the large second-order nonlinearity.

Kawamura, Ibuki; Imakita, Kenji; Fujii, Minoru; Hayashi, Shinji [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)] [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)

2013-11-11T23:59:59.000Z

375

Correlation of defect centers with second-harmonic generation in Ge-doped and Ge–P-doped silica-core single-mode fibers  

Science Journals Connector (OSTI)

The origin of frequency doubling in Ge-doped silica-core single-mode glass fibers has been investigated with electron-spin-resonance spectrometry. Correlations have been observed...

Tsai, T E; Saifi, M A; Friebele, E J; Österberg, U; Griscom, D L

1989-01-01T23:59:59.000Z

376

Microsoft Word - Poster Abstract_2010_GE Global Reserach.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

current collector geometry on ohmic resistance current collector geometry on ohmic resistance H. Cao, S. Gaunt, T. Striker and M.J. Alinger* GE Global Research, One Research Circle, Niskayuna, NY 12309 In order to directly measure the cathode current collector ohmic resistance contribution to the total cell resistance, contact resistance measurements are typically made. In addition to starting cell resistance contributions, these tests provide data regarding resistance changes over time for interpretation of performance degradation. However, the geometries of the current collection used during this testing are often not directly representative of operational fuel cells. Thus, an experimental study was initiated to investigate the effect of various interconnect geometries and their influence on Area

377

Direct Detection of Sub-GeV Dark Matter  

SciTech Connect (OSTI)

Direct detection strategies are proposed for dark matter particles with MeV to GeV mass. In this largely unexplored mass range, dark matter scattering with electrons can cause single-electron ionization signals, which are detectable with current technology. Ultraviolet photons, individual ions, and heat are interesting alternative signals. Focusing on ionization, we calculate the expected dark matter scattering rates and estimate the sensitivity of possible experiments. Backgrounds that may be relevant are discussed. Theoretically interesting models can be probed with existing technologies, and may even be within reach using ongoing direct detection experiments. Significant improvements in sensitivity should be possible with dedicated experiments, opening up a window to new regions in dark matter parameter space.

Essig, Rouven; Mardon, Jeremy; Volansky, Tomer

2012-03-20T23:59:59.000Z

378

Axial Ge/Si nanowire heterostructure tunnel FETs  

SciTech Connect (OSTI)

The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

379

An integrated study of the Grayburg/San Andres Reservoir, Foster and South Cowden Fields, Ector County, Texas. Annual report, August 1, 1996--July 31, 1997  

SciTech Connect (OSTI)

The objective of this two-phase study is to demonstrate an integrated methodology for reservoir characterization of shallow shelf carbonate reservoir that is feasible, and cost effective for the independent operator. Furthermore, it will provide one of the first public demonstrations of the enhancement of reservoir characterization using high-resolution three dimensional (3D) seismic data. This particular project is evaluating the Grayburg and San Andres reservoirs in the Foster and South Cowden Fields, Ector County, Texas. This 68 year old field was approaching its economic limit and the leases evaluated would have been abandoned in 10 years. A multidisciplinary approach to waterflood design and implementation, along with the addition of reserves by selective infill drilling and deepening, is being applied to this field. This approach in reservoir development will be applicable to a wide range of shallow shelf carbonate reservoirs throughout the US. The first phase of the project included the design, acquisition, and interpretation of the 3D seismic survey, the collection and evaluation of geologic (core and log) data, and engineering (historical production, well test, injection) data from a variety of sources. From this work, a geologically based production history model was simulated. Based on the recommendations made at the end of Phase One, three new wells were drilled, one existing well was deepened, two wells were worked over, one TA`d well was re-entered, and one well was converted to injection. In addition, the quality of the injection water was greatly improved, a step necessary prior to increasing injection in the project area. The realignment of the waterflood and all additional well work await the completion of the seismic based history match and engineering simulation.

Trentham, R.C.; Weinbrandt, R.; Robinson, W.

1997-12-01T23:59:59.000Z

380

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb  

E-Print Network [OSTI]

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a procedureGe), cryogenic, low noise amplifier (LNA), noise parameters, transistor modeling. I. INTRODUCTION Very low

Weinreb, Sander

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Optical gain from the direct gap transition of Ge-on-Si at room temperature  

E-Print Network [OSTI]

We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

Liu, Jifeng

382

Infrared absorption of n-type tensile-strained Ge-on-Si  

E-Print Network [OSTI]

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct ? valley in n[superscript +] Ge-on-Si is reported ...

Wang, Xiaoxin

383

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes  

E-Print Network [OSTI]

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-absorption-charge- multiplication Ge/Si avalanche photodiode with an enhanced gain- bandwidth-product of 845GHz at a wavelength photodiodes (APDs) References and links 1. R. B. Emmons, "Avalanche photodiode frequency response," J. Appl

Bowers, John

384

University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS  

E-Print Network [OSTI]

for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature and thermally in parallel, similar to conventional thermoelectric devices, and thus achieve large cooling of the barriers to further increase clock speeds and decrease feature sizes. Thermoelectric (TE) refrigeration

385

Experimental limits on massive neutrinos from e(+)e(-) annihilations at 29 GeV  

E-Print Network [OSTI]

A search was made in 29-GeV e(+)e(-) annihilations for massive neutrinos decaying to e(±)X(?)(?) where X is a muon or meson. A 300-pb(-1) data sample yielded just one candidate event with a mass m(e)X>1.8 GeV. Significant limits are found for new...

Baringer, Philip S.; Akerlof, C.; Chapman, J.; Errede, D.; Ken, M. T.; Meyer, D. I.; Neal, H.; Nitz,D.; Thun, R.; Tschirhart, R.; Derrick, M.

1988-02-01T23:59:59.000Z

386

Electrical and thermal properties of neutron-transmutation-doped Ge at 20 mK  

Science Journals Connector (OSTI)

We report on hot-electron effects in neutron-transmutation-doped Ge (NTD Ge) near 20 mK. Both static and dynamic electrical properties were measured and compared with a model including both variable-range-hopping conduction and hot-electron effects.

Ning Wang; F. C. Wellstood; B. Sadoulet; E. E. Haller; J. Beeman

1990-02-15T23:59:59.000Z

387

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications  

E-Print Network [OSTI]

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication ApplicationsGe/Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. In There is immense interest in the realization of Si-based optoelectronic devices, optoelectronic integrated circuits

Rieh, Jae-Sung

388

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology  

E-Print Network [OSTI]

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology Gye-An Lee distributed amplifier for optical communication applications using SiGe BiCMOS technology. The design of some techniques are needed at such high frequencies. Main obstacles in the design of a silicon- based distributed

De Flaviis, Franco

389

The BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator  

E-Print Network [OSTI]

used at the world's first x-ray free electron laser (FEL) at the LCLS at SLAC, and the lower energyThe BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator W.P. Leemansa,b,c , R, USA Abstract. An overview is presented of the design of a 10 GeV laser plasma accelerator (LPA

Geddes, Cameron Guy Robinson

390

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche  

E-Print Network [OSTI]

-speed InP /InGaAsP /InGaAs avalanche photodiodes grown by chemical beam epitaxy," IEEE J. Quantum ElectronResonant normal-incidence separate-absorption- charge-multiplication Ge/Si avalanche photodiodes the impedance of separate-absorption-charge- multiplication Ge/Si avalanche photodiodes (APD) is characterized

Bowers, John

391

Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem  

SciTech Connect (OSTI)

The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted.

Emtsev, Vadim; Oganesyan, Gagik [IoffePhysicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa 26, 194021 St. Petersburg (Russian Federation)

2014-02-21T23:59:59.000Z

392

Activation and thermal stability of ultra-shallow B{sup +}-implants in Ge  

SciTech Connect (OSTI)

The activation and thermal stability of ultra-shallow B{sup +} implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B{sup +} implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B{sup +} implants at 2, 4, and 6 keV to fluences ranging from 5.0 Multiplication-Sign 10{sup 13} to 5.0 Multiplication-Sign 10{sup 15} cm{sup -2} was studied using micro Hall effect measurements after annealing at 400-600 Degree-Sign C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 Degree-Sign C for 60 s was characterized by channeling analysis with a 650 keV H{sup +} beam by utilizing the {sup 11}B(p, {alpha})2{alpha} nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 Degree-Sign C.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Petersen, D. H. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); Hansen, O. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); CINF, Center for Individual Nanoparticle Functionality, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Lin, R.; Nielsen, P. F. [CAPRES A/S, Scion-DTU, DK-2800 Kgs. Lyngby (Denmark); Romano, L. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Doyle, B. L. [Sandia National Laboratories, MS-1056, Albuquerque, New Mexico 87185 (United States); Kontos, A. [Applied Materials, Gloucester, Massachusetts 01930 (United States)

2012-12-15T23:59:59.000Z

393

GE, Clean Energy Fuels Partner to Expand Natural Gas Highway | OpenEI  

Open Energy Info (EERE)

GE, Clean Energy Fuels Partner to Expand Natural Gas Highway GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 - 19:18 clean energy Clean Energy Fuels energy Environment Fuel GE Innovation Partnerships Technology Innovation & Solutions Transportation Trucking GE, Clean Energy Fuels Partner to Expand 'Natural Gas Highway' GE and Clean Energy Fuels announced a collaboration to expand the infrastructure for natural gas transportation in the United States. The agreement supports Clean Energy's efforts in developing America's Natural Gas Highway, a fueling network that will enable trucks to operate on liquefied natural gas coast to coast and border to border. Clean Energy Fuels will initially purchase two ecomagination-qualified

394

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Broader source: Energy.gov (indexed) [DOE]

902; W(A)-2012-019; CH-1662 902; W(A)-2012-019; CH-1662 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled, "Seeping Studies to Evaluate the Benefits of an Advanced Dry Feed System on the Use of Low-Rank Coal". Under this agreement, GE will demonstrate the advantage of using GE's new, advanced dry feed system (Posimetric Feed System-PFS) for converting low rank coal to electrical power in an IGCC plant configured for 90% Carbon Capture Utilization and Storage (CCUS). The PFS is centered on GE's proprietary Posimetric Feeder, a mechanical device that behaves like a particulate solids pump and is capable of pressurizing dry, ground coal to over 100 psi

395

Titan Propels GE Wind Turbine Research into New Territory | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Features Features 2014 2013 2012 2011 2010 News Home | ORNL | News | Features | 2013 SHARE Titan Propels GE Wind Turbine Research into New Territory Simulations of freezing water can help engineers design better blades GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) (hi-res image) The amount of global electricity supplied by wind, the world's fastest

396

VEA-0016 - In the Matter of GE Appliances | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

6 - In the Matter of GE Appliances 6 - In the Matter of GE Appliances VEA-0016 - In the Matter of GE Appliances Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month exception from the 2001 energy appliance efficiency standards for built-in refrigerators. Viking Range Corp., 28 DOE ¶ 81,002 (2000). As discussed below, we have granted the appeals in part. As a result, the six-month exception will be limited to 475 refrigerators per month and will be subject to a monthly reporting requirement. vea0015-16-17.pdf More Documents & Publications VEH-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0017 - In the Matter of Whirlpool Corporation

397

BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF  

Broader source: Energy.gov (indexed) [DOE]

DEC. -15' 97(MON) 00:19 IPL DO DEC. -15' 97(MON) 00:19 IPL DO TEL:I 630 5 2779 P. 002 BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER COOPERATIVE AGREEMENT NO. DE-FC36-97GO10236, W(A)-97-024, CH-0929 The Petitioner, General Electric Company (GE), was awarded this cooperative agreement in response to a proposal for an affordable compact fluorescent lamp (CFL). The initial phase of this work is being performed under DOE Contract No. DE-FC36-97G010236. GE has requested a waiver of domestic and foreign patent rights for all subject inventions under this agreement. As brought out in GE's response to questions 2& 3, the total estimated cost of the project is $1,117,342 with GE paying 25% and DOE providing the balance.

398

Mn-doping-induced itinerant-electron ferromagnetism in Cr2GeC  

Science Journals Connector (OSTI)

The magnetism of the Mn+1AXn phase, Cr2GeC, and its Mn-doped system, (Cr1?xMnx)2GeC (x?0.25), synthesized via a solid state reaction, was investigated systematically. Cr2GeC is in a spin-unpolarized state, but the ferromagnetic band polarization is induced immediately by the Mn doping. The Curie temperature, TC, and the spontaneous moment, ps, increase almost proportionally to the Mn concentration, strongly suggesting that Cr2GeC is located in the vicinity of a ferromagnetic quantum critical point. The strong concentration dependence of peff/ps, where peff is the effective moment in the paramagnetic state, indicates that the ferromagnetism appearing in the Mn-doped Cr2GeC can be classified as a typical itinerant-electron ferromagnetism in a wide range of the degree of electron localization.

Z. Liu; T. Waki; Y. Tabata; H. Nakamura

2014-02-28T23:59:59.000Z

399

Ohmic contact on n-type Ge using Yb-germanide  

SciTech Connect (OSTI)

Poor ohmic contact by Fermi-level pinning to valence band (E{sub V}) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 Degree-Sign C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application.

Zheng Zhiwei; Liu Ming [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Ku, Teng-Chieh; Chin, Albert [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2012-11-26T23:59:59.000Z

400

In-situ monitoring of surface hydrogen on the a-SiGe:H films  

SciTech Connect (OSTI)

The bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.

Toyoshima, Y.; Ganguly, G.; Ikeda, T.; Saitoh, K.; Kondo, M.; Matsuda, A.

1997-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Infrared electroluminescence was observed from GeSn/Ge p-n heterojunction diodes with 8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped, compressively strained, and pseudomorphic on Ge substrates. Spectral measurements indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with applied pulsed current, and with reducing device temperatures. The total integrated emitted power from a single edge facet was 54 {mu}W at an applied peak current of 100 mA at 100 K. These results suggest that GeSn-based materials maybe useful for practical light emitting diodes operating in the infrared wavelength range near 2 {mu}m.

Gupta, Jay Prakash; Bhargava, Nupur; Kim, Sangcheol; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Adam, Thomas [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)] [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)

2013-06-24T23:59:59.000Z

402

Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures  

SciTech Connect (OSTI)

Heteroepitaxial Ge{sub 0.98}Mn{sub 0.02} quantum dots (QDs) on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriched silicide precipitates directly underneath a fraction of the Ge superdomes. The magnetic response from the ultra-thin film indicates the absence of robust room temperature ferromagnetism, perhaps due to anomalous intermixing of Si into the Ge quantum dots.

Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

2012-12-10T23:59:59.000Z

403

An ultra-thin buffer layer for Ge epitaxial layers on Si  

SciTech Connect (OSTI)

Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)

2013-03-25T23:59:59.000Z

404

Nanoporosity induced by ion implantation in deposited amorphous Ge thin films  

SciTech Connect (OSTI)

The formation of a nano-porous structure in amorphous Ge thin film (sputter-deposited on SiO{sub 2}) during ion irradiation at room temperature with 300 keV Ge{sup +} has been observed. The porous film showed a sponge-like structure substantially different from the columnar structure reported for ion implanted bulk Ge. The voids size and structure resulted to be strongly affected by the material preparation, while the volume expansion turned out to be determined only by the nuclear deposition energy. In SiGe alloys, the swelling occurs only if the Ge concentration is above 90%. These findings rely on peculiar characteristics related to the mechanism of voids nucleation and growth, but they are crucial for future applications of active nanostructured layers such as low cost chemical and biochemical sensing devices or electrodes in batteries.

Romano, L.; Impellizzeri, G.; Ruffino, F.; Miritello, M.; Grimaldi, M. G. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Bosco, L. [Scuola Superiore di Catania, Via Valdisavoia 9, I-95123 Catania (Italy)

2012-06-01T23:59:59.000Z

405

Robbins project - start-up and commercial operation at a leading-edge recycling, waste-to-energy plant  

SciTech Connect (OSTI)

On January 22, 1997, the Robbins Resource Recovery Facility began commercial operation in Robbins, Illinois, a suburb of Chicago, after a very successful start-up program. The first installation of its kind in the United States, the Robbins facility converts municipal solid waste (MSW) into refuse-derived fuel (RDF) that is fired in two circulating fluidized-bed boilers. Steam from the boilers powers a turbine generator that can produce enough electricity to service more than 50,000 homes. The Robbins facility processes a minimum of 1600 tons of MSW per day. Some 75 percent of the MSW is converted into RDF. In addition to compostable material, the balance yields reusable aluminum, ferrous materials, and glass. Even ash produced by the circulating fluidized-bed (CFB) boilers can be used to manufacture cement. The Robbins facility is operated by Foster Wheeler Illinois, Inc., a member of the Foster Wheeler Power Systems Group. The plant was engineered by Foster Wheeler USA Corporation and built by Foster Wheeler Constructors, Inc. Foster Wheeler Energy International, Inc. provided the circulating fluidized-bed boilers.

NONE

1997-12-31T23:59:59.000Z

406

Dangling Bond Defects in a-Si,Ge Alloys: A Theoretical Study Using the Tight-Binding Method  

Science Journals Connector (OSTI)

This paper presents a theoretical study of Si and Ge atom dangling bond defects in a-Si,Ge alloys. We use a tight-binding Hamiltonian, and a structural model based on a cluster Bethe Lattice. The central clust...

S. Y. Lin; G. Lucovsky

1985-01-01T23:59:59.000Z

407

A Systematic Investigation of the Structure and Superconducting Properties of Nb3Ge Prepared in a UHV System  

Science Journals Connector (OSTI)

Nb3Ge films were prepared by coevaporation of Nb and Ge from two sources under well defined and controlled conditions. We have studied the formation of the A15 phase by varying the processing parameters-compositi...

H. U. Habermeier; P. Chaudhari

1981-01-01T23:59:59.000Z

408

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect (OSTI)

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

409

Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe  

Science Journals Connector (OSTI)

Abstract The disilane (Si2H6) + germane (GeH4) chemistry has been evaluated for the reduced pressure (2660 Pa, i.e. 20 Torr), low temperature growth of intrinsic and heavily boron-doped SiGe. A SiGe growth rate “plateau” has been evidenced between 650 °C and 750 °C. Meanwhile, the Ge concentration x was rather steady in the 500 °C–700 °C range. A linear increase of the SiGe growth rate with the GeH4 flow occurred at 500 °C, 550 °C and 675 °C. The increase of x with the GeH4 mass-flow otherwise changed from linear to sub-linear as the growth temperature was reduced from 675 °C down to 500 °C–550 °C. Be it with Si2H6 or SiH4, the SiGe growth rate fell by a factor of ~ 7–8 when switching from 550 °C to 500 °C. For the same x, growth rate was nevertheless 3–9 times higher with Si2H6 than with SiH4. We have also studied the impact of B2H6 on the 500 °C growth kinetics of SiGe with Si2H6. Large substitutional boron concentrations were obtained in single-crystalline SiGe:B layers: [B]subst. ~ 3.7 × 1020 cm?3. Surface B atoms otherwise catalysed H desorption, resulting in growth rates ~ 5 times higher for SiGe:B than for intrinsic SiGe. Finally, a monotonic decrease of the SiGe(:B) growth rate together with a significant increase of the Ge concentration were evidenced at 500 °C and 675 °C when adding \\{HCl\\} to the gaseous mixture. At 500 °C, SiGe:B growth rates still stayed 3 times higher than the intrinsic SiGe ones. Adding \\{HCl\\} had otherwise no clear impact on [B]subst.

J.M. Hartmann; V. Benevent; M. Veillerot; A. Halimaoui

2014-01-01T23:59:59.000Z

410

Spécification technique des stations de pompage pour les faisceaux secondaires des Zones Expérimentales du synchroton de 300 GeV  

E-Print Network [OSTI]

Spécification technique des stations de pompage pour les faisceaux secondaires des Zones Expérimentales du synchroton de 300 GeV

Coet, P

1975-01-01T23:59:59.000Z

411

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar  

E-Print Network [OSTI]

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide nanowire junctionless (GeNW-JL) metal-oxide-semiconductor-field-effect-transistors (MOSFETs) exhibited in the suboxide on the GeNW, whose germanium- enrichment surface was obtained to form a germanide contact at low

Jo, Moon-Ho

412

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced  

E-Print Network [OSTI]

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced one-step route was developed to synthesize crystalline CuGeO3 nanowire/graphene composites (CGCs). Crystalline CuGeO3 nanowires were tightly covered and anchored by graphene sheets, forming a layered structure

Lin, Zhiqun

413

Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires  

Science Journals Connector (OSTI)

We experimentally studied the thermoelectric power factor of hole gas in individual Ge–Si core–shell nanowires with Ge core diameters ranging from 11 to 25 nm. The Ge cores are dopant-free, but the Fermi level in the cores is pinned by surface and defect ...

Jaeyun Moon; Ji-Hun Kim; Zack C.Y. Chen; Jie Xiang; Renkun Chen

2013-02-08T23:59:59.000Z

414

Comparative study of dimer-vacancies and dimer-vacancy lines on Si(001) and Ge(001)  

E-Print Network [OSTI]

Comparative study of dimer-vacancies and dimer-vacancy lines on Si(001) and Ge(001) Cristian V that dimer- vacancy (DV) defects self-organize into vacancy lines (VLs) on Si(0 0 1), but not on Ge(0 0 1 the vacancies on Si(0 0 1) and Ge(0 0 1). We identify three energetic parameters which characterize the DVs

Ciobanu, Cristian

415

Sharp Fe/MgO/Ge(001) epitaxial heterostructures for tunneling junctions  

SciTech Connect (OSTI)

We report on the growth of epitaxial Fe/MgO/Ge(001) heterostructures by molecular beam epitaxy. The lowest oxidation and highest sharpness of the MgO/Ge interface, corresponding to a transition layer on the order of one Ge unit cell, is obtained for room temperature growth of the MgO layer followed by annealing in a vacuum at 500 C. In these conditions, the MgO layer grows epitaxially on Ge(001) with the [110] direction parallel to the [100] direction of Ge, at variance with the cube-on-cube growth on Si(001) and GaAs(001). However, in some cases, the cube-on-cube growth mode of MgO on Ge competes with the mode involving a 45{sup o} rotation, as revealed by transmission electron microscopy and photoelectron diffraction data on MgO films grown at 300 C without postannealing, and on p-doped Ge substrates. For the Fe overlayer, in all the cases reported, room temperature growth followed by annealing up to 200 C gives rise to a sharp interface and the well-known 45{sup o} rotation of the Fe lattice with respect to the MgO lattice.

Petti, D. [Politecnico di Milano; Cantoni, M. [Politecnico di Milano; Rinaldi, C. [Politecnico di Milano; Brivio, S. [Politecnico di Milano; Bertacco, R. [Politecnico di Milano; Gazquez Alabart, Jaume [ORNL; Varela del Arco, Maria [ORNL

2011-01-01T23:59:59.000Z

416

Structure determination of Ag-Ge-S glasses using neutron diffraction  

Science Journals Connector (OSTI)

The structure of the superionic glass system (Ag2S)x(GeS2)1-x, for three compositions x=0.3, 0.4, 0.5, has been studied using neutron diffraction, and isotopic-substitution neutron-diffraction experiments have been performed on three silver isotope-substituted (107Ag,natAg,109Ag) samples of the composition (Ag2S)0.5(GeS2)0.5. The average short-range orderings of Ge-S, Ag-S, and Ge-Ag correlations were identified in the radial distribution functions for the isotopically substituted system of (Ag2S)0.5(GeS2)0.5. From the first and second differences in the three sets of isotopic-substitution neutron-diffraction data, the other three partial correlations (Ag-Ag, Ge-Ge, and S-S), were also identified. By examining unusually broad peaks in the Ag-Ag correlation function, it was concluded that the Ag-Ag distribution was rather homogeneous. We were also able to obtain further information by combining the first and second difference analyses, resulting in a structural model of a slightly elongated GeS4 tetrahedron with the local environment of Ag+ ions being threefold coordination by nonbridging sulphur ions. The medium-range order of the host framework was found to be a chainlike structure of linked corner-sharing GeS4 tetrahedra. Substantial changes in the first and second peaks in the distinct scattering functions i(Q) were found with composition and also with isotopic substitution. It was possible to explain the trends in the changes of the heights of these peaks in the structure factor by applying the void model for the first sharp diffraction peak. © 1996 The American Physical Society.

J. H. Lee; A. P. Owens; A. Pradel; A. C. Hannon; M. Ribes; S. R. Elliott

1996-08-01T23:59:59.000Z

417

Wide-band neutrino beams at 1000 GeV  

SciTech Connect (OSTI)

In a previous publication, S. Mori discussed various broad-band neutrino and antineutrino beams using 1000 GeV protons on target. A new beam (SST) has been designed which provides the same neutrino flux as the quadrupole triplet (QT) while suppressing the wrong sign flux by a factor of 18. It also provides more than twice as much high energy antineutrino flux than the sign-selected bare target (SSBT) and in addition, has better neutrino suppression. While it is possible to increase the flux obtained from the single horn system over that previously described, the conclusion which states any horn focussing system seems to be of marginal use for Tevatron neutrino physics, is unchanged. Neutrino and antineutrino event rates and wrong sign backgrounds were computed using NUADA for a 100 metric ton detector of radius 1.5 meters. Due to radiation considerations and the existing transformer location, the horn beam is placed in its usual position inside the Target Tube. All other beams are placed in Fronthall. Thus, for the wide-band Fronthall trains a decay distance of 520 meters is used, versus 400 meters for the horn train. (WHK)

Malensek, A.; Stutte, L.

1983-04-11T23:59:59.000Z

418

Exotic decays of the 125 GeV Higgs boson  

Science Journals Connector (OSTI)

We perform an extensive survey of nonstandard Higgs decays that are consistent with the 125 GeV Higgs-like resonance. Our aim is to motivate a large set of new experimental analyses on the existing and forthcoming data from the Large Hadron Collider (LHC). The explicit search for exotic Higgs decays presents a largely untapped discovery opportunity for the LHC collaborations, as such decays may be easily missed by other searches. We emphasize that the Higgs is uniquely sensitive to the potential existence of new weakly coupled particles and provide a unified discussion of a large class of both simplified and complete models that give rise to characteristic patterns of exotic Higgs decays. We assess the status of exotic Higgs decays after LHC run I. In many cases we are able to set new nontrivial constraints by reinterpreting existing experimental analyses. We point out that improvements are possible with dedicated analyses and perform some preliminary collider studies. We prioritize the analyses according to their theoretical motivation and their experimental feasibility. This document is accompanied by a Web site that will be continuously updated with further information [http://exotichiggs.physics.sunysb.edu].

David Curtin; Rouven Essig; Stefania Gori; Prerit Jaiswal; Andrey Katz; Tao Liu; Zhen Liu; David McKeen; Jessie Shelton; Matthew Strassler; Ze’ev Surujon; Brock Tweedie; Yi-Ming Zhong

2014-10-13T23:59:59.000Z

419

Potential improvements in SiGe radioisotope thermoelectric generator performance  

SciTech Connect (OSTI)

In accordance with NASA{close_quote}s slogan: {open_quotes}Better, Cheaper, Faster,{close_quotes} this paper will address potential improvements to SiGe RTG technology to make them Better. RTGs are doubtless cheaper than {open_quotes}paper designs{close_quotes} which are better and cheaper until development, performance and safety test costs are considered. RTGs have the advantage of being fully developed and tested in the rigors of space for over twenty years. Further, unless a new system can be accelerated tested, as were the RTGs, they cannot be deployed reliably unless a number of systems have succeeded for test periods exceeding the mission lifetime. Two potential developments are discussed that can improve the basic RTG performance by 10 to 40{sup +}{percent} depending on the mission profile. These improvements could be demonstrated in years. Accelerated testing could also be performed in this period to preserve existing RTG reliability. Data from a qualification tested RTG will be displayed, while not definitive, to support the conclusions. Finally, it is anticipated that other investigators will be encouraged to suggest further modifications to the basic RTG design to improve its performance. {copyright} {ital 1999 American Institute of Physics.}

Mowery, A.L. [4 Myrtle Bank Lane, Hilton Head Island, South Carolina, 29926-2650 (United States)

1999-01-01T23:59:59.000Z

420

APPROACHING CRYOGENIC GE PERFORMANCE WITH PELTIER COOLED CDTE  

SciTech Connect (OSTI)

A new class of hand-held, portable spectrometers based on large area (lcm2) CdTe detectors of thickness up to 3mm has been demonstrated to produce energy resolution of between 0.3 and 0.5% FWHM at 662 keV. The system uses a charge loss correction circuit for improved efficiency, and detector temperature stabilization to ensure consistent operation of the detector during field measurements over a wide range of ambient temperature. The system can operate continuously for up to 8hrs on rechargeable batteries. The signal output from the charge loss corrector is compatible with most analog and digital spectroscopy amplifiers and multi channel analyzers. Using a detector measuring 11.2 by 9.1 by 2.13 mm3, we have recently been able to obtain the first wide-range plutonium gamma-ray isotopic analysis with other than a cryogenically cooled germanium spectrometer. The CdTe spectrometer is capable of measuring small plutonium reference samples in about one hour, covering the range from low to high burnup. The isotopic analysis software used to obtain these results was FRAM, Version 4 from LANL. The new spectrometer is expected to be useful for low-grade assay, as well as for some in-situ plutonium gamma-ray isotopics in lieu of cryogenically cooled Ge.

Khusainov, A. K. (A. Kh.); Iwanczyk, J. S. (Jan S.); Patt, B. E. (Bradley E.); Prirogov, A. M. (Alexandre M.); Vo, Duc T.

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Characterization of SiGe/Si multi-quantum wells for infrared sensing  

SciTech Connect (OSTI)

SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (2–2500?×?10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

Moeen, M.; Salemi, A.; Östling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

2013-12-16T23:59:59.000Z

422

Low-temperature recrystallization of Ge nanolayers on ZnSe  

SciTech Connect (OSTI)

The in situ X-ray photoelectron spectroscopy observation of low-temperature recrystallization of an amorphous Ge layer deposited on a ZnSe film at room temperature is reported. It is shown that the experimentally measured shifts of the Ge 3d core level are consistent with the changes observed in the crystal structure of the layer by the high-energy electron diffraction technique in the reflection mode of measurements. The shifts can be attributed to successive nanometer-scaled structural changes in the Ge layer with increasing temperature.

Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru; Fedosenko, E. V. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)

2007-05-15T23:59:59.000Z

423

Wheeler County, Texas: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

°, -100.3497895° °, -100.3497895° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":35.3830893,"lon":-100.3497895,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

424

Wheeler County, Oregon: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

66°, -120.0829624° 66°, -120.0829624° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":44.6659766,"lon":-120.0829624,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

425

Wheeler AFB, Hawaii: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFB, Hawaii: Energy Resources AFB, Hawaii: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 21.481945°, -158.041423° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":21.481945,"lon":-158.041423,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

426

Wheeler County, Nebraska: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

°, -98.5721016° °, -98.5721016° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.8372138,"lon":-98.5721016,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

427

MANLEY, STEVEN L., KELLY GOODWIN, AND WHEELER J ...  

Science Journals Connector (OSTI)

Laboratory production of bromoform, methylene bromide, and methyl iodide by ..... ration. J. Phycol. 21: 154-167. CLASS, T., AND K. BALLSCTHMITER. 1988.

2000-03-19T23:59:59.000Z

428

Electric Two-Wheelers in China: Promise Progress and Potential  

E-Print Network [OSTI]

growing use of lead batteries. Over 90 percent of electricof the largest electric scooters use even heavier batteries.and even recycling lead batteries can generate substantial

Cherry, Christopher

2010-01-01T23:59:59.000Z

429

Wheeler County, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

2.6915429° 2.6915429° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":32.0999794,"lon":-82.6915429,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

430

Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method  

SciTech Connect (OSTI)

The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 ? cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

Tsukamoto, Takahiro; Suda, Yoshiyuki [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan)] [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan); Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)] [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)

2013-10-21T23:59:59.000Z

431

Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration | U.S.  

Office of Science (SC) Website

Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » July 2013 Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Scientists at University of Texas, Austin, accelerate electrons to 2 GeV in table top apparatus. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo Image courtesy of Neil Fazel The inside of the University of Texas, Austin, vacuum chamber where

432

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Broader source: Energy.gov (indexed) [DOE]

859; W(A)-2012-018 859; W(A)-2012-018 ; CH-1661 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled , "Feasibility Studies to Improve Plant Availability and Reduce Total Installed Cost in IGCC Plants". Under this agreement, GE will evaluate several factors that make the cost of implementing integrated gasification combined cycle (IGCC) power production challenging . Specifically, GE will evaluate the effects on total installed cost and availability through deployment of a multi-faceted approach in three areas: Technology Evaluation ; Constructability; and , Design methodology. The end result is to reduce the time to technologica l maturity and enable plants to reach higher

433

Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab  

Broader source: Energy.gov (indexed) [DOE]

Secretary Chu to Tour GE Global Research Advanced Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis WASHINGTON - On Friday, May 25, 2012, U.S. Energy Secretary Steven Chu will visit GE Global Research in Niskayuna, New York, where he will tour the company's advanced manufacturing lab. Secretary Chu will highlight the economic opportunities in the clean energy economy as well as advanced manufacturing's potential to save American companies time and money while supporting efficient innovative product engineering and development. Following his tour, Secretary Chu will speak at Rensselaer Polytechnic Institute's Commencement Colloquy. On Saturday, May 26, Secretary Chu will participate in the university's commencement ceremonies as an

434

Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab  

Broader source: Energy.gov (indexed) [DOE]

Tour GE Global Research Advanced Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis WASHINGTON - On Friday, May 25, 2012, U.S. Energy Secretary Steven Chu will visit GE Global Research in Niskayuna, New York, where he will tour the company's advanced manufacturing lab. Secretary Chu will highlight the economic opportunities in the clean energy economy as well as advanced manufacturing's potential to save American companies time and money while supporting efficient innovative product engineering and development. Following his tour, Secretary Chu will speak at Rensselaer Polytechnic Institute's Commencement Colloquy. On Saturday, May 26, Secretary Chu will participate in the university's commencement ceremonies as an

435

Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado  

Broader source: Energy.gov (indexed) [DOE]

Another SunShot Success: GE to Make PrimeStar Solar Panels at New Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant October 14, 2011 - 4:03pm Addthis Thin film solar panels produced by General Electric’s PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Minh Le Minh Le Program Manager, Solar Program Yesterday, General Electric (GE) announced that it will build a new thin-film photovoltaic (PV) solar panel manufacturing facility in Aurora, Colorado, to produce highly-efficient, low-cost panels that are based on innovative technology originally developed at the Energy Department's

436

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Broader source: Energy.gov (indexed) [DOE]

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

437

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY (GE) FOR AN  

Broader source: Energy.gov (indexed) [DOE]

(GE) FOR AN (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS TO INVENTIONS MADE UNDER COOPERATIVE AGREEMENT NUMBER DE-FC04-2002AL68080, DOE WAIVER NO. W(A) 03-003. The Petitioner, GE, has requested a waiver of all domestic and foreign patent rights to inventions that may be conceived or first actually reduced to practice in the course of GE's work under Cooperative Agreement Number DE-FC04-2002AL68080 entitled "Advanced Hybrid Propulsion and Energy Management System for High Efficiency, Off- Highway, 320 Ton Class, Diesel Electric Haul Trucks." The work to be done under the cooperative agreement will be the design, fabrication and demonstration of a hybrid propulsion and energy management system for off-highway vehicles used in mining applications. The hybrid propulsion system would allow for an

438

STATEMENT OF CONSIDERATIONS PETITION FOR ADVANCE WAIVER OF PATENT RIGHTS BY GE  

Broader source: Energy.gov (indexed) [DOE]

181 BETWEEN GE GLOBAL AND 181 BETWEEN GE GLOBAL AND DOE; W(A)-09-016; CH-1485 The Petitioner, GE GLOBAL, has requested a waiver of domestic and certain foreign patent rights for all subject inventions that may be conceived or first actually reduced to practice by GE GLOBAL arising from its participation under the above referenced cooperative agreement entitled "300°c Capable Electronics Platform and Temperature Sensor System for Enhanced Geothermal Systems." The objective of the project is development of geothermal well bore monitoring applications, through the development of SiC based electronics and ceramic packaging capable of sustained operation at temperatures up to 300°C and 10km depth. The total cost of the project is approximately $2 million with the Petitioner

439

High efficiency thin-film crystalline Si/Ge tandem solar cell  

Science Journals Connector (OSTI)

We propose and simulate a photovoltaic solar cell comprised of Si and Ge pn junctions in tandem. With an anti-reflection film at the front surface, we have shown that optimal solar...

Sun, G; Chang, F; Soref, R A

2010-01-01T23:59:59.000Z

440

Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells  

Science Journals Connector (OSTI)

Abstract We report on physical properties of microcrystalline silicon-germanium (?c-SiGe:H) absorber layers for the use as a bottom structure in silicon based multijunction thin-film solar cells. Due to incorporation of Ge the absorption of the film is enhanced compared to pure ?c-Si:H films. This provides the opportunity to significantly reduce the absorber layer thickness. The experiments were carried out in a 13.56 MHz PECVD reactor using germane, silane and hydrogen as process gases. Single layers were characterized for their optical and electrical properties. Results from single and multijunction solar cells using a ?c- SiGe:H absorbers will be shown. In tandem solar cells a reduction of about 60% of the absorber layer thickness could be reached by using SiGe alloys compared to pristine silicon tandem cells.

K.V. Maydell; K. Grunewald; M. Kellermann; O. Sergeev; P. Klement; N. Reininghaus; T. Kilper

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Theoretical study of the thermoelectric properties of SiGe nanotubes  

E-Print Network [OSTI]

The thermoelectric properties of two typical SiGe nanotubes are investigated using a combination of density functional theory, Boltzmann transport theory, and molecular dynamics simulations. Unlike carbon nanotubes, these SiGe nanotubes tend to have gear-like geometry, and both the (6, 6) and (10, 0) tubes are semiconducting with direct band gaps. The calculated Seebeck coefficients as well as the relaxation time of these SiGe nanotubes are significantly larger than those of bulk thermoelectric materials. Together with smaller lattice thermal conductivity caused by phonon boundary and alloy scattering, these SiGe nanotubes can exhibit very good thermoelectric performance. Moreover, there are strong chirality and temperature dependence of the ZT values, which can be optimized to 4.9 at room temperature and further enhanced to 5.4 at 400 K for the armchair (6, 6) tube.

Wei, J; Tan, X J; Cheng, L; Zhang, J; Fan, D D; Shi, J; Tang, X F

2014-01-01T23:59:59.000Z

442

Absorption, structural, and electrical properties of Ge films prepared by ion-beam-assisted deposition  

Science Journals Connector (OSTI)

Effects of ion energy on the optical, microstructure, and electrical properties of Ge films prepared by ion-beam-assisted deposition were investigated. The absorption edge is found to...

Leng, Jian; Zhao, Li; Ji, Yiqin; Liu, Huasong; Zhuang, Kewen

2014-01-01T23:59:59.000Z

443

5 Top Trends From the Women and Technology Symposium | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

disciplines. So this year, we wanted to take it to the next level. Why not leverage our "Mini-GE" (Chairmen Jeff Immelt's nickname for our India technology center), where all of...

444

Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy  

SciTech Connect (OSTI)

The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony.

Drozdov, M. N.; Novikov, A. V.; Yurasov, D. V., E-mail: Inquisitor@ipm.sci.nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

445

Natural SnGeS3 from Radvanice near Trutnov (Czech Republic) :  

Science Journals Connector (OSTI)

...diffractometer HZG4/TuR (CuKalpha radiation, stepscanning). To minimize...graphite monochromatized MoKalpha-radiation. Data collection parameters...zaoek Ondurs, P. (1997): Naturally occuring germanium compounds, GeSnS3...

Jiri SEJKORA; Peter BERLEPSCH; Emil MAKOVICKY; Tonci BALI?-ZUNI?

446

Particle production models in HETC88 in the energy range 3 to 30 GeV  

SciTech Connect (OSTI)

HETC88 is the latest version of the high-energy transport code HETC that has been used to provide accelerator shield and calorimeter design data for many years. (See Refs. 3, 4, and 5 and the refs. given therein). This version of the code is described and results are compared with experimental data in Ref. 1. The high-energy particle production model in HETC88 is a multi-chain fragmentation model based on the work of J. Ranft and S. Ritter (see Ref. 6 and the refs. given therein). The fragmentation model used in HETC88 is described and compared with experimental data. In HETC88, the fragmentation model is used at energies {ge} 5 GeV, a scaling model is used in energy range 3 to 5 GeV, and the intranuclear cascade model is used at energies {le} 3 GeV. 10 refs., 1 fig.

Alsmiller, R.G. Jr.; Alsmiller, F.S.

1991-01-01T23:59:59.000Z

447

A Ge-on-Si laser for electronic-photonic integration  

E-Print Network [OSTI]

We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects ...

Sun, Xiaochen

448

Direct-gap optical gain of Ge on Si at room temperature  

E-Print Network [OSTI]

Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor ...

Liu, Jifeng

449

Direct gap photoluminescence of n-type tensile-strained Ge-on-Si  

E-Print Network [OSTI]

Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct ? valley as ...

Sun, Xiaochen

450

Growth mechanism difference of sputtered HfO{sub 2} on Ge and on Si  

SciTech Connect (OSTI)

HfO{sub 2} films were deposited by the reactive sputtering on Ge and Si substrates simultaneously, and we found both the interface layer and the HfO{sub 2} film were thinner on Ge substrate than those on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO{sub 2} film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before the reactive sputtering process. The role of metallic Hf in these phenomena is understandable by assuming the formation of a volatile Hf-Ge-O ternary compound at the early stage of the film growth. This result shows that the HfO{sub 2}/Ge system has an advantage over the HfO{sub 2}/Si system from the viewpoint of further reduction of the gate oxide film thickness.

Kita, Koji; Kyuno, Kentaro; Toriumi, Akira [Department of Materials Science, School of Engineering, University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2004-07-05T23:59:59.000Z

451

Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor  

E-Print Network [OSTI]

We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this “old” semiconductor material used for the first transistor more than ...

Jifeng, Liu

452

Measurement of inclusive charged current interactions on carbon in a few-GeV neutrino beam  

E-Print Network [OSTI]

We report a measurement of inclusive charged current interactions of muon neutrinos on carbon with an average energy of 0.8 GeV using the Fermilab Booster Neutrino Beam. We compare our measurement with two neutrino interaction ...

Conrad, Janet

453

Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge  

E-Print Network [OSTI]

Li, A. P. et al. Magnetism in Mn x Ge 1-x semiconductorsElectronic Structure and Magnetism for Mn in Amorphous Sistructure that determines magnetism. Figure 3 shows XAS data

Zeng, Li

2010-01-01T23:59:59.000Z

454

Ge{sub 1-x}Mn{sub x} heteroepitaxial quantum dots: Growth, morphology, and magnetism  

SciTech Connect (OSTI)

Heteroepitaxial Ge{sub 1-x}Mn{sub x} quantum dots (QDs) were grown on Si (001) by molecular beam epitaxial co-deposition, with x = 0 to 0.10, in order to explore the interaction between Mn content, surface morphological evolution, and magnetism. Morphological evolution typical of the Ge/Si (001) system was observed, where the effect of Mn on surface morphology is surprisingly minimal at low Mn content, with no obvious surface morphological indicators of second phase formation. As the Mn content increases, secondary phase formation becomes evident, appearing to heterogeneously nucleate on or within Ge QDs. Still higher Mn concentrations lead to extensive second phase formation interspersed with an array of Ge QDs. Although ferromagnetism up to 220 K is observed, likely arising from intermetallic precipitates, there is no clear evidence for room-temperature ferromagnetism associated with a dilute magnetic solution phase.

Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

2013-02-21T23:59:59.000Z

455

Pushing the Performance Limits of SiGe HBTTechnology Marwan Khatera  

E-Print Network [OSTI]

noise, device matching,and power performance.The performance evolution ofSiGe HBT technologyin recent. ECS Transactions, 3 (7) 341-353 (2006) 10.1149/1.2355832, copyright The Electrochemical Society 341

Rieh, Jae-Sung

456

Electronic structure of the Ge/RbF/GaAs(100) heterostructure: LCAO calculations  

Science Journals Connector (OSTI)

The electronic structure of Ge/RbF/GaAs(100) system ... known however about their reactivity. In these calculations the reactive contacts were postulated and modelled. ... obtained results, compared with those of...

Barbara Stankiewicz

457

Investigation of lateral gated quantum devices in Si/SiGe heterostructures  

E-Print Network [OSTI]

Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Because of this, they are excellent candidates for use as solid state ...

Lai, Andrew P. (Andrew Pan)

2013-01-01T23:59:59.000Z

458

Super-Resolution ROM Disc Using GeAl Reflective Absorption Layer  

Science Journals Connector (OSTI)

We have developed a super-resolution ROM disc using a newly designed GeAl reflective absorption layer. The optical resolution limit in high readout power expanded more than 1.5 times...

Aoki, Kazuhiko; Tanabe, Hideki; Ohkubo, Shuichi; Kariyada, Eiji; Katayama, Ryuichi; Yamanaka, Yutaka

459

Optical gain and lasing from band-engineered Ge-on-Si at room temperature  

E-Print Network [OSTI]

We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale ...

Liu, Jifeng

460

Black GE based on crystalline/amorphous core/shell nanoneedle arrays  

SciTech Connect (OSTI)

Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

Javey, Ali; Chueh, Yu-Lun; Fan, Zhiyong

2014-03-04T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications  

SciTech Connect (OSTI)

Current-voltage characteristic for a Ge-incorporated Si oxide was investigated. Current enhancement was observed for the electric field larger than 10 MV/cm. Such a current enhancement only under high electric field is expected to improve programming performance without deteriorating reading performance. From secondary ion mass spectrometry and hard x-ray photoelectron spectroscopy analyses and current simulation, it is concluded that the Ge impurity in Ge{sup 4+} state around the tunnel oxide/substrate interface enhances the current by trap-assisted tunneling. The programming current enhancement induced by the Ge incorporation is expected to be one of the promising solutions for the next-generation flash memory.

Ito, Toshihide; Mitani, Yuuichiro; Nakasaki, Yasushi; Koike, Masahiro [Corporate Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 212-8582 (Japan); Konno, Takuya; Matsuba, Hiroshi [Corporate Manufacturing Engineering Center, Toshiba Corporation, Isogo-ku, Yokohama 235-0017 (Japan); Kai, Tetsuya; Kaneko, Wakana; Ozawa, Yoshio [Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, Isogo-ku, Yokohama 235-8522 (Japan)

2012-02-13T23:59:59.000Z

462

Nucleation Of Ge 3D-islands On Pit-patterned Si Substrates  

SciTech Connect (OSTI)

Joint experimental and theoretical study of Ge nanoislands growth on pit-patterned Si substrate is carried out. Si substrates that have been templated by means of electron beam lithography and reactive ion etching have been used to grow Ge by molecular-beam epitaxy. Atomic-force-microscopy studies show that at Si(100) substrate temperature 550 deg. C, Ge nanoislands are formed at the pits' edges, rather than between the pits. The effect is interpreted in terms of energy barrier, that is formed near the edge of a pit and prevents Ge transport inside the pit. By molecular dynamics calculations the value of the energy barrier 0.9 eV was obtained.

Novikov, P. L.; Smagina, J. V.; Vlasov, D. Yu.; Deryabin, A. S.; Kozhukhov, A. S.; Dvurechenskii, A. V. [Institute of Semiconductor Physics SB RAS, Pr. ac. Lavrent'eva, 13, 630090 Novosibirsk (Russian Federation)

2011-12-23T23:59:59.000Z

463

Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Single crystal epitaxial Ge{sub 1?x}Sn{sub x} alloys with atomic fractions of tin up to x = 0.145 were grown by solid source molecular beam epitaxy on Ge (001) substrates. The Ge{sub 1?x}Sn{sub x} alloys formed high quality, coherent, strained layers at growth temperatures below 250 °C, as shown by high resolution X-ray diffraction. The amount of Sn that was on lattice sites, as determined by Rutherford backscattering spectrometry channeling, was found to be above 90% substitutional in all alloys. The degree of strain and the dependence of the effective unstrained bulk lattice constant of Ge{sub 1?x}Sn{sub x} alloys versus the composition of Sn have been determined.

Bhargava, Nupur; Coppinger, Matthew; Prakash Gupta, Jay; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Wielunski, Leszek [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)] [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)

2013-07-22T23:59:59.000Z

464

Structure of the novel ternary hydrides Li4Tt2D (Tt = Si and Ge)  

Science Journals Connector (OSTI)

The crystal structures of novel Li4Tt2D (Tt = Si and Ge) ternary hydrides were solved using neutron powder diffraction data. All hydrogen atoms were found to occupy Li6-octahedral interstices.

Wu, H.

2007-01-15T23:59:59.000Z

465

Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser  

SciTech Connect (OSTI)

Using a time-resolved interferometric technique, we study the laser-induced carrier-trapping dynamics in SiO{sub 2} and Ge-doped SiO{sub 2}. The fast trapping of electrons in the band gap is associated with the formation of self-trapped excitons (STE). The STE trapping is doping dependent in SiO{sub 2}. The mean trapping time of electrons excited in the conduction band was found to be significantly lower in Ge-doped silica (75 {+-} 5 fs) when compared to pure silica (155 {+-} 5 fs). At our concentration level, this indicates that the plasma properties are determined by the presence of easily ionizable states such as the presence of Ge atoms in the glass network. Therefore, we suggest that in Ge-doped silica there exist an additional trapping pathway that leads to a significantly faster excitons trapping and a higher plasma density when compared to undoped silica.

Lancry, M.; Poumellec, B. [LPCES/ICMMO, UMR CNRS-UPS 8182, Universite Paris Sud 11, Batiment 410, 91405 Orsay (France); Groothoff, N.; Canning, J. [Interdisciplinary Photonics Laboratories, School of Chemistry, University of Sydney, 206 NIC, ATP, Eveleigh, NSW, 1340 (Australia); Guizard, S.; Fedorov, N. [Laboratoire des Solides Irradies/CEA IRAMIS, Ecole Polytechnique, Palaiseau (France)

2011-12-15T23:59:59.000Z

466

New Global Oil & Gas Hub in Oklahoma City | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Selects Oklahoma City Site for New Global Hub of Oil & Gas Technology Innovation GE Selects Oklahoma City Site for New Global Hub of Oil & Gas Technology Innovation New Center to...

467

OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng  

E-Print Network [OSTI]

at the University of Toledo (UT) in the fabrication of high-efficiency triple, tandem and single-junction solar with 12.5% initial efficiency and 10.7% stable efficiency, tandem-junction a-Si/a-SiGe solar cells with 12.9% initial efficiency, and single-junction a-SiGe solar cells with 12.5-13% initial efficiency and 10

Deng, Xunming

468

In-beam measurement of E0 matrix element in Se72 and Ge72  

Science Journals Connector (OSTI)

A 0 + state in Se72 at 936 keV has been identified through in-beam measurements with Ge70(?,2n)Se72. The beam-related time distribution of conversion electrons from the 936-keV E0 transition yields a half-life of 19.3±0.4 ns. With a Ge72 target and an ?-beam sweeper the half-life of the 690-keV E0 transition in Ge72 was 404±45 ns. For both transitions identification of the emitting nucleus was obtained from the energy separation of the K and L electrons. The KL intensity ratio was intermediate between the theoretical results of Hager and Seltzer and those of Church and Weneser. The reduced E0 nuclear matrix elements are ?=(0.304±0.003)(1-5.01×10-3f) and ?=0.095±0.005 for Se72 and Ge72, respectively, which are 0.77 (for f?40) and 0.24, respectively, of Wilkinson's suggested single-particle unit for E0 matrix elements. The f is the 0??2 enhancement.[NUCLEAR REACTIONS Ge70(?,2n), E=27.5 MeV, Ge72(?,??) and Ge72(?,pn), E=27.5 MeV; measured in-beam ce spectra and time distributions; deduced T12 and E0 matrix element for 936-keV 0+ state in Se72 and 690-keV 0+ state in Ge72; compared KL ratio with theories.

James E. Draper; Nicholas S. P. King; Walter G. Wyckoff

1974-03-01T23:59:59.000Z

469

Design of a short electro-optic modulator based on SiGe HBT structure  

E-Print Network [OSTI]

­68980C­10 (2008). 3. A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu­17113 (2007). 7. S. Deng, Z. R. Huang, and J. F. McDonald, "Design of high efficiency multi-GHz SiGe HBT.-S. Rieh, D. Greenberg, A. Stricker, and G. Freeman, "Scaling of SiGe heterojunction bipolar transistors

Huang, Zhaoran "Rena"

470

Elastic neutron-scattering experiments at the Geesthacht Neutron Facility (GeNF)  

Science Journals Connector (OSTI)

The Geesthacht Neutron Facility (GeNF) comprises experimental facilities for elastic neutron scattering for materials research and engineering problems as well as for environmental research purposes at the research reactor FRG-1. The experimental facilities for elastic neutron-scattering experiments at GeNF, most of which can be optimally used with polarized neutrons, will be presented. They are open to national and international users from universities and other research institutes at no cost.

R Kampmann; R Wagner

1997-01-01T23:59:59.000Z

471

Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)  

SciTech Connect (OSTI)

We have studied ferromagnetism of Mn-implanted epitaxial Ge films on silicon. The Ge films were grown by ultrahigh vacuum chemical vapor deposition using a mixture of germane (GeH{sub 4}) and methylgermane (CH{sub 3}GeH{sub 3}) gases with a carbon concentration of less than 1 at. %, and observed surface rms roughness of 0.5 nm, as measured by atomic force microscopy. Manganese ions were implanted in epitaxial Ge films grown on Si (100) wafers to an effective concentration of 16, 12, 6, and 2 at. %. Superconducting quantum interference device measurements showed that only the three highest Mn concentration samples are ferromagnetic, while the fourth sample, with [Mn] = 2 at. %, is paramagnetic. X-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements indicate that localized Mn moments are ferromagnetically coupled below the Curie temperature. Isothermal annealing of Mn-implanted Ge films with [Mn] = 16 at. % at 300 C for up to 1200 s decreases the magnetization but does not change the Curie temperature, suggesting that the amount of the magnetic phase slowly decreases with time at this anneal temperature. Furthermore, transmission electron microscopy and synchrotron grazing incidence x-ray diffraction experiments show that the Mn-implanted region is amorphous, and we believe that it is this phase that is responsible for the ferromagnetism. This is supported by our observation that high-temperature annealing leads to recrystallization and transformation of the material into a paramagnetic phase.

Guchhait, S.; Jamil, M.; Ohldag, H.; Mehta, A.; Arenholz, E.; Lian, G.; Li Fatou, A.; Ferrer, D. A.; Markert, J. T.; Colombo, L.; Banerjee, S. K.

2011-01-05T23:59:59.000Z

472

26. 1% solar cell efficiency for Ge mechanically stacked under GaAs  

SciTech Connect (OSTI)

We have processed a diffused Ge wafer into a Ge concentrator solar cell and mechanically stacked it under a GaAs cell fabricated by Varian. We measured this stack's efficiency to be 26.1% for terrestrial air mass 1.5 direct (AM1.5D) conditions at a 285 x concentration ratio. We showed that this efficiency is limited by optical absorption in the Varian GaAs cell caused by high 2--4 (10/sup 18/) cm/sup -3/ substrate doping. We used a 2 x 10/sup 17/ cm/sup -3/ doped GaAs filter to estimate the stack efficiency as 27.4%, which would be achieved with the same Varian GaAs cell formed on a lower doped substrate. We project efficiencies assuming the best properties reported for a GaAs device. This gives a 29.6% efficiency for an improved, planar Ge cell and 31.6% efficiency for a proposed point contact geometry for the Ge cell. The corresponding space (AM0) efficiencies at a 159 x concentration ratio range from the 23.4% value we measured on the stack up to 28.4% projected for the point contact Ge place under the best GaAs cell. We showed that Ge cells give higher efficiencies than Si when stacked under GaAs.

Partain, L.D.; Kuryla, M.S.; Weiss, R.E.; Ransom, R.A.; McLeod, P.S.; Fraas, L.M.; Cape, J.A.

1987-10-01T23:59:59.000Z

473

Wave-function engineering and absorption spectra in Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06}/Si{sub 0.16}Ge{sub 0.84} strained on relaxed Si{sub 0.10}Ge{sub 0.90} type I quantum well  

SciTech Connect (OSTI)

We theoretically investigate germanium-tin alloy as a semiconductor for the design of near infrared optical modulators in which the Ge{sub 1?x}Sn{sub x} alloy is the active region. We have calculated the electronic band parameters for heterointerfaces between strained Ge{sub 1?x}Sn{sub x} and relaxed Si{sub 1?y}Ge{sub y}. Then, a type-I strain-compensated Si{sub 0.10}Ge{sub 0.90}/Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06} quantum well heterostructure optimized in terms of compositions and thicknesses is studied by solving Schrödinger equation without and under applied bias voltage. The strong absorption coefficient (>1.5?×?10{sup 4}?cm{sup ?1}) and the shift of the direct transition under large Stark effect at 3?V are useful characteristics for the design of optoelectronic devices based on compressively strained IV-IV heterostructures at near infrared wavelengths.

Yahyaoui, N., E-mail: naima.yahyaoui@yahoo.fr, E-mail: moncef-said@yahoo.fr; Sfina, N.; Said, M., E-mail: naima.yahyaoui@yahoo.fr, E-mail: moncef-said@yahoo.fr [Laboratoire de la Matière Condensée et des Nanosciences (LMCN), Département de Physique, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019 Monastir (Tunisia); Lazzari, J.-L. [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UMR CNRS 7325, Aix-Marseille Université, Case 913, Campus de Luminy, 13288 Marseille cedex 9 (France); Bournel, A. [Institut d'Electronique Fondamentale (IEF), UMR CNRS 8622, Université Paris-Sud, Bât. 220, 91405 Orsay cedex (France)

2014-01-21T23:59:59.000Z

474

Inelastic interaction induced by high-energy muons (6 GeV, 12 GeV) at low momentum-transfer in nuclear emulsion  

Science Journals Connector (OSTI)

Inelastic scattering of 6 and 12 GeV muons has been studied in Ilford K5 nuclear emulsions. For energy transfers greater than 150 MeV (for ?...2..., the cross-sections are respectively (11.1±1.4) ?b/nucleon at 12...

J. C. Montret; B. Coupat; B. Michel; F. Vazeille

1972-01-01T23:59:59.000Z

475

Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe  

E-Print Network [OSTI]

Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge; published 4 December 2007 Phase-change materials are of immense importance for optical recording-increasing demands on the density, speed, and stability of memory. Phase-change PC materials already play impor- tant

476

University Petition for General Education Variation The General Education (G.E.) program at Cal State Fullerton is the foundation of a university education. G.E. requirements  

E-Print Network [OSTI]

, students may petition for a variation to a standard G.E. requirement. IMPORTANT: This petition should plan for meeting the requirement being petitioned in the event the petition is denied. PREPARING it is prepared for review. If there is a historical TDA that has information on it that is no longer on your TDA

de Lijser, Peter

477

In situ observation of self-assembled Fe{sub 13}Ge{sub 8} nanowires growth on anisotropic Ge (1 1 0) surface  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer Epitaxial Fe{sub 13}Ge{sub 8} nanowries growth and shape evolution on Ge (1 1 0) studied by in situ UHV-TEM. Black-Right-Pointing-Pointer Single type of morphology and unique orientation of nanowires formed at elevated temperatures. Black-Right-Pointing-Pointer Uniform control of the nanowires morphology at different temperatures can be succeeded. -- Abstract: Self-assembled iron germanide nanowires (NWs) were grown by directly depositing Fe onto a Ge (1 1 0) substrate, in an in situ ultra-high vacuum transmission electron microscope from 430 to 500 Degree-Sign C. All observed NWs had a similar length/width aspect ratio ({approx}8:1) at all deposition temperatures, as well as the same elongation orientation with respect to the underlying Ge (1 1 0) substrate. The growth dynamics was investigated by real time observations of NWs growth at elevated temperatures. It is elucidated that the formation of NWs in similar shape at all deposited temperatures is attributed to the similar activation energy barriers in length and width of NWs, which can result in the constant growth rate independent of growth temperatures. Furthermore, the difference in pre-exponential factor along the length and width of growing islands arose due to the anisotropic constraint of the Ge (1 1 0) substrate, leading to the unique elongation of NWs. This growth dynamics suggests the possibility of uniform control of the morphology of self-assembled NWs, as well as other morphologies of bottom-up fabricated devices, at different deposition temperatures.

Li, Zhi-Peng, E-mail: LI.Zhipeng@nims.go.jp [Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 (Singapore) [Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 (Singapore); Global Research Center for Environment and Energy based on Nanomaterials Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Tok, Engsoon [Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 (Singapore)] [Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 (Singapore); Foo, Yonglim [Institute of Materials Research and Engineering, 3 Research Link, S117602 (Singapore)] [Institute of Materials Research and Engineering, 3 Research Link, S117602 (Singapore)

2012-02-15T23:59:59.000Z

478

Single-Neutron Excitations in Neutron-Rich 83Ge and 85Se  

SciTech Connect (OSTI)

The 2H(82Ge,p)83Ge and 2H(84Se,p)85Se reactions were studied with radioactive beams of 82Ge and 84Se at beam energies of Ebeam = 330 and 380 MeV, respectively. Excitation energies, proton angular distributions, and asymptotic normalization coefficients have been determined for the lowest lying states of 83Ge and 85Se. Spectroscopic factors have also been extracted under normal assumptions of the bound-state potential properties in the DWBA analysis. However, the peripheral character of the measurements leads to large uncertainties in this extraction. Shell model calculations have been performed in the region above 78Ni, comparing the single-particle properties of the even-Z, N = 51 nuclei up to 91Zr and including 83Ge and 85Se. Direct-semidirect neutron capture calculations to 83Ge and 85Se have also been performed using the spectroscopic input from these (d,p) reaction measurements.

Thomas, Jeffrey S [ORNL; Arbanas, Goran [ORNL; Bardayan, Daniel W [ORNL; Blackmon, Jeff C [ORNL; Cizewski, Jolie [ORNL; Dean, David Jarvis [ORNL; Fitzgerald, Ryan [ORNL; Greife, Uwe [ORNL; Gross, Carl J [ORNL; Johnson, Micah [ORNL; Grzywacz-Jones, Kate L [ORNL; KOZUB, RAYMOND L [ORNL; Liang, J Felix [ORNL; Livesay, Jake [ORNL; Ma, Zhanwen [ORNL; Moazen, Brian H [ORNL; Nesaraja, Caroline D [ORNL; Shapira, Dan [ORNL; Smith, Michael Scott [ORNL; Visser, Dale William [ORNL

2007-01-01T23:59:59.000Z

479

Structure and magnetism in strained Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy  

SciTech Connect (OSTI)

In this letter, we study the structural and magnetic properties of Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy using X-ray diffraction, high resolution transmission electron microscopy, and superconducting quantum interference device. Like in Mn doped Ge films, Mn atoms diffuse during the growth and aggregate into vertically aligned Mn-rich nanocolumns of a few nanometers in diameter. Transmission electron microscopy observations in plane view clearly indicate that the Sn incorporation is not uniform with concentration in Mn rich vertical nanocolumns lower than the detection limit of electron energy loss spectroscopy. The matrix exhibits a GeSn solid solution while there is a Sn-rich GeSn shell around GeMn nanocolumns. The magnetization in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} layers is higher than in Ge{sub 1-x}Mn{sub x} films. This magnetic moment enhancement in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} is probably related to the modification of the electronic structure of Mn atoms in the nanocolumns by the Sn-rich shell, which is formed around the nanocolumns.

Prestat, E. [INAC, SP2M, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France); Karlsruher Institut fuer Technologie (KIT), Laboratorium fuer Elektronenmikroskopie, D-76128 Karlsruhe (Germany); Barski, A.; Bellet-Amalric, E.; Morel, R.; Tainoff, D.; Jain, A.; Porret, C.; Bayle-Guillemaud, P.; Jamet, M. [INAC, SP2M, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France); Jacquot, J.-F. [INAC, SCIB, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

2013-07-01T23:59:59.000Z

480

Molecular dynamics simulations of damage production by thermal spikes in Ge  

SciTech Connect (OSTI)

Molecular dynamics simulation techniques are used to analyze damage production in Ge by the thermal spike process and to compare the results to those obtained for Si. As simulation results are sensitive to the choice of the inter-atomic potential, several potentials are compared in terms of material properties relevant for damage generation, and the most suitable potentials for this kind of analysis are identified. A simplified simulation scheme is used to characterize, in a controlled way, the damage generation through the local melting of regions in which energy is deposited. Our results show the outstanding role of thermal spikes in Ge, since the lower melting temperature and thermal conductivity of Ge make this process much more efficient in terms of damage generation than in Si. The study is extended to the modeling of full implant cascades, in which both collision events and thermal spikes coexist. Our simulations reveal the existence of bigger damaged or amorphous regions in Ge than in Si, which may be formed by the melting and successive quenching induced by thermal spikes. In the particular case of heavy ion implantation, defect structures in Ge are not only bigger, but they also present a larger net content in vacancies than in Si, which may act as precursors for the growth of voids and the subsequent formation of honeycomb-like structures.

Lopez, Pedro; Pelaz, Lourdes; Santos, Ivan; Marques, Luis A.; Aboy, Maria [Departamento de Electricidad y Electronica, Universidad de Valladolid, E.T.S.I. Telecomunicacion, Valladolid 47011 (Spain)

2012-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "foster wheeler ge" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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481

Investigations of the R5(SixGe1-x)4 Intermetallic Compounds by X-Ray Resonant Magnetic Scattering  

SciTech Connect (OSTI)

The XRMS experiment on the Gd{sub 5}Ge{sub 4} system has shown that, below the Neel temperature, T{sub N} = 127 K, the magnetic unit cells is the same as the chemical unit cell. From azimuth scans and the Q dependence of the magnetic scattering, all three Gd sites in the structure were determined to be in the same magnetic space group Pnma. The magnetic moments are aligned along the c-axis and the c-components of the magnetic moments at the three different sites are equal. The ferromagnetic slabs are stacked antiferromagnetically along the b-direction. They found an unusual order parameter curve in Gd{sub 5}Ge{sub 4}. A spin-reorientation transition is a possibility in Gd{sub 5}Ge{sub 4}, which is similar to the Tb{sub 5}Ge{sub 4} case. Tb{sub 5}Ge{sub 4} possesses the same Sm{sub 5}Ge{sub 4}-type crystallographic structure and the same magnetic space group as Gd{sub 5}Ge{sub 4} does. The difference in magnetic structure is that Tb{sub 5}Ge{sub 4} has a canted one but Gd{sub 5}Ge{sub 4} has nearly a collinear one in the low temperature antiferromagnetic phase. The competition between the magneto-crystalline anisotropy and the nearest-neighbor magnetic exchange interactions may allow a 3-dimensional canted antiferromagnetic structure in Tb{sub 5}Ge{sub 4}. The spin-reorientation transition in both Gd{sub 5}Ge{sub 4} and Tb{sub 5}Ge{sub 4} may arise from the competition between the magnetic anisotropy from the spin-orbit coupling of the conduction electrons and the dipolar interactions anisotropy.

Lizhi Tan

2008-08-18T23:59:59.000Z

482

Scanning tunneling microscopy study of the Eu-induced Ge(111)-(3×2)?(3×4) reconstruction  

Science Journals Connector (OSTI)

Eu-induced (3×2) reconstruction of the Ge(111) surface has been investigated by scanning tunneling microscopy (STM). The empty-state STM images show the chainlike atomic structure that is similar to those of the metal-induced Si(111)-(3×2) surfaces with an adsorbate coverage of 1?6 monolayer (ML). The filled-state STM images combined with the empty-state images at the low bias voltage reveal that the Ge arrangement of Eu?Ge(111)-(3×2) can be well interpreted in terms of the honeycomb chain-channel (HCC) model with the characteristic Ge?Ge double bond and slightly modified Ge honeycomb chains which are similar to those of the 1?6-ML HCC structure of Si(111)-(3×2). In addition, the Eu?Ge(111)-(3×2) surface is found to have a local ×4 periodicity along Eu chains, which can be explained, based on the analysis of STM line profiles, with two nonequivalent adsorption sites occupied by the Eu atoms in the empty channels of the HCC structure. The structural modifications of the Ge honeycomb chains as well as the origin of the ×2 and ×4 chains of Eu atoms in the HCC structure on the Eu?Ge(111) surface are discussed.

M. Kuzmin; P. Laukkanen; R. E. Perälä; I. J. Väyrynen

2006-03-23T23:59:59.000Z

483

Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy  

SciTech Connect (OSTI)

Tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of optoelectronic devices that are compatible with the mainstream silicon technology. Tensile-strained Ge/Si epilayers can be obtained by using the difference of thermal expansion coefficients between Ge and Si. We have combined various surface, structural, and compositional characterizations to investigate the growth mode and the strain state in Ge/Si epilayers grown by molecular-beam epitaxy. The Ge growth was carried out using a two-step approach: a low-temperature growth to produce relaxed and smooth buffer layers, which is followed by a high-temperature growth to get high quality Ge layers. The existence of a substrate temperature window from 260 to 300 °C is evidenced, which allows to completely suppress the Ge/Si Stranski-Krastanov growth. As a consequence of the high temperature growth, a tensile strain lying in the range of 0.22%–0.24% is obtained. Concerning the effect of thermal annealing, it is shown that cyclic annealing may allow increasing the tensile strain up to 0.30%. Finally, we propose an approach to use carbon adsorption to suppress Si/Ge interdiffusion, which represents one of the main obstacles to overcome in order to realize pure Ge-based optoelectronic devices.

Luong, T. K. P.; Dau, M. T.; Zrir, M. A.; Le Thanh, V.; Petit, M. [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France)] [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France); Stoffel, M.; Rinnert, H. [Université de Lorraine, Institut Jean Lamour, CNRS UMR 7198, Nancy-Université, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France)] [Université de Lorraine, Institut Jean Lamour, CNRS UMR 7198, Nancy-Université, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Ghrib, A.; El Kurdi, M.; Boucaud, P. [Institut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Ba-carett. 220, 91405 Orsay (France)] [Institut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Ba-carett. 220, 91405 Orsay (France); Murota, J. [Research Institute of Electrical Communications, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)] [Research Institute of Electrical Communications, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2013-08-28T23:59:59.000Z

484

6 GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GeV LIGHT SOURCE PROJECT GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34 October 23, 1985 YC/AVR To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV Light Source, the following procedure will be used by all the task groups. The procedure uses a Work Breakdown Structure (WBS) to break down the project into manageable, easy to estimate, components. The project is first broken down into major tasks or categories. Then each major division is continuously subdivided until the desired level of detail is achieved. This can be shown best by using the example of the WBS of the Aladdin Upgrade Project, excerpts of which are included in Appendix A. As shown in the example, the project is first divided into: 1.1 Project Management and Administration

485

The Linac Injector For The ANL 7 Ge V Advanced Photon Source  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Injector For The ANL 7 Ge V Injector For The ANL 7 Ge V Advanced Photon Source A. Nassiri, W. Wesolowski, and G. Mavrogenes Argonne National Laboratory Submitted to the 1990 LINAC Conferece Albuquerque, New Mexico LS-154 9/28/90 TEE LINAC INJECTOR FOR TEE ANL 7 G<.iJ,V ADVANCED PHOTON SOORCE* A. Nassiri, W. Wesolowski, and G. Mavrogenes Argonne National Laboratory 9700 South Cass Avenue Argonne, IL 60439 USA Abstract The Argonne Advanced Photon Source (APS) linac system consists of a 200 MeV electron linac, a positron converter, and a 450 MeV positron linac. Design parameters and computer simulations of the two linac systems are presented. Introduction The Argonne Advanced Photon Source is a 7 GeV synchrotron X-Ray facility. The APS machine parameters have been described.

486

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC GLOBAL RESEARCH, INC (GE) FOR AN  

Broader source: Energy.gov (indexed) [DOE]

RESEARCH, INC (GE) FOR AN RESEARCH, INC (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE AWARD NO. DE-EE0005344; W(A) 2011-072 GE has requested a waiver of domestic and foreign patent rights of the United States of America in all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Module Embedded Microinverter Smart Grid Ready Residential Solar Electric System." The cooperative agreement was made under the Solar Energy Grid Integration Systems - Advanced Concepts (SEGIS-AC) Funding Opportunity Announcement (DE-FOA-0000479). The objectives of SEGIS-AC are to support the development and demonstration of technologies in power electronics that reduce the overall PV system costs, allow high penetrations of solar

487

STATEMENT OF CONSIDERATIONS REQUEST BY THE GE CORPORATE RESEARCH AND DEVELOPMENT  

Broader source: Energy.gov (indexed) [DOE]

0 0 STATEMENT OF CONSIDERATIONS REQUEST BY THE GE CORPORATE RESEARCH AND DEVELOPMENT (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE- FC07-011D14093; W(A)-01-031; CH-1078 The Petitioner, GE, has requested a waiver of domestic and foreign patent rights for all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Microanalysis Techniques for Accelerated Characterization of Polymer Properties." This waiver will not impact the rights of those parties subject to Public Law 96-517, as amended, nor shall it grant any rights in inventions made by employees of the National Laboratories. The objective of the cooperative agreement is to develop techniques and

488

Microsoft Word - DOE-ID-13-005 GE Hitachi EC B3-6.doc  

Broader source: Energy.gov (indexed) [DOE]

5 5 SECTION A. Project Title: Next Generation Electromagnetic Pump: Analysis Tools and Insulation Materials Development - GE Hitachi Nuclear Energy Americas LLC SECTION B. Project Description GE Hitachi, teaming with Argonne National Laboratory, proposes to improve electromagnetic (EM) pump analysis model and EM design and analysis tools for next-generation EM pumps. Additionally, GE Hitachi proposes to develop, produce, and evaluate samples of new pump insulation materials. SECTION C. Environmental Aspects / Potential Sources of Impact Chemical Use/Storage - Mica flake, ceramic fibers, glass fibers, and ceramic binders will be used. Chemical Waste Disposal - Approximately 1 lb of mica flake, 1 lb of ceramic fibers, 1 lb of glass fibers, and 20 lbs of ceramic binders

489

Suzanne G.E. te Velthuis - Argonne National Laboratories, Materials Sicence  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NXRS > Suzanne G.E. te Velthuis NXRS > Suzanne G.E. te Velthuis Suzanne G.E. te Velthuis Physicist Bldg. 223, B-205 Phone 630-252-1075 This e-mail address is being protected from spambots. You need JavaScript enabled to view it. Quick Links Selected Publications Selected Invited Talks Present Position Physicist, Materials Science Division, Argonne National Laboratory (2005-Present). Education Ph.D. Degree, Deft University of Technology, The Netherlands (1999). Masters Degree in Applied Physics, Eindhoven University of Technology, The Netherlands (1993). Professional Expirence Assistant Scientist, Materials Science Division, Argonne National Laboratory, (2001-2005). Post-doctoral Scientist, Intense Pulsed Neutron Source, Argonne National Laboratory (1999-2001). Researcher in training (leading to PhD degree), Delft University of Technology, The Netherlands (1994 -1998).

490

Microsoft Word - DOE-ID-13-005 GE Hitachi EC B3-6.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

5 5 SECTION A. Project Title: Next Generation Electromagnetic Pump: Analysis Tools and Insulation Materials Development - GE Hitachi Nuclear Energy Americas LLC SECTION B. Project Description GE Hitachi, teaming with Argonne National Laboratory, proposes to improve electromagnetic (EM) pump analysis model and EM design and analysis tools for next-generation EM pumps. Additionally, GE Hitachi proposes to develop, produce, and evaluate samples of new pump insulation materials. SECTION C. Environmental Aspects / Potential Sources of Impact Chemical Use/Storage - Mica flake, ceramic fibers, glass fibers, and ceramic binders will be used. Chemical Waste Disposal - Approximately 1 lb of mica flake, 1 lb of ceramic fibers, 1 lb of glass fibers, and 20 lbs of ceramic binders

491

5-10 GeV Neutrinos from Gamma-Ray Burst Fireballs  

E-Print Network [OSTI]

A gamma-ray burst fireball is likely to contain an admixture of neutrons, in addition to protons, in essentially all progenitor scenarios. Inelastic collisions between differentially streaming protons and neutrons in the fireball produce muon neutrinos (antineutrinos) of ~ 10 GeV as well as electron neutrinos (antineutrinos) of ~ 5 GeV, which could produce ~ 7 events/year in kilometer cube detectors, if the neutron abundance is comparable to that of protons. Photons of ~ 10 GeV from pi-zero decay and ~ 100 MeV electron antineutrinos from neutron decay are also produced, but will be difficult to detect. Photons with energies < 1 MeV from shocks following neutron decay produce a characteristic signal which may be distinguishable from the proton-related MeV photons.

John N. Bahcall; Peter Meszaros

2000-06-23T23:59:59.000Z

492

An aerogel Cherenkov detector for multi-GeV photon detection with low sensitivity to neutrons  

E-Print Network [OSTI]

We describe a novel photon detector which operates under an intense flux of neutrons. It is composed of lead-aerogel sandwich counter modules. Its salient features are high photon detection efficiency and blindness to neutrons. As a result of Monte Carlo (MC) simulations, the efficiency for photons with the energy larger than 1 GeV is expected to be higher than 99.5% and that for 2 GeV/$c$ neutrons less than 1%. The performance on the photon detection under such a large flux of neutrons was measured for a part of the detector. It was confirmed that the efficiency to photons with the energy $>$1 GeV was consistent with the MC expectation within 8.2% uncertainty.

Y. Maeda; N. Kawasaki; T. Masuda; H. Morii; D. Naito; Y. Nakajima; H. Nanjo; T. Nomura; N. Sasao; S. Seki; K. Shiomi; T. Sumida; Y. Tajima

2014-12-22T23:59:59.000Z

493

An aerogel Cherenkov detector for multi-GeV photon detection with low sensitivity to neutrons  

E-Print Network [OSTI]

We describe a novel photon detector which operates under an intense flux of neutrons. It is composed of lead-aerogel sandwich counter modules. Its salient features are high photon detection efficiency and blindness to neutrons. As a result of Monte Carlo (MC) simulations, the efficiency for photons with the energy larger than 1 GeV is expected to be higher than 99.5% and that for 2 GeV/$c$ neutrons less than 1%. The performance on the photon detection under such a large flux of neutrons was measured for a part of the detector. It was confirmed that the efficiency to photons with the energy $>$1 GeV was consistent with the MC expectation within 8.2% uncertainty.

Maeda, Y; Masuda, T; Morii, H; Naito, D; Nakajima, Y; Nanjo, H; Nomura, T; Sasao, N; Seki, S; Shiomi, K; Sumida, T; Tajima, Y

2014-01-01T23:59:59.000Z

494

Electronic structural and magnetic properties of Mn{sub 5}Ge{sub 3} clusters  

SciTech Connect (OSTI)

Theoretical understanding of the stability, ferromagnetism, and spin polarization of Mn{sub 5}Ge{sub 3} clusters has been performed by using the density functional theory with generalized gradient approximation for exchange and correlation. The magnetic moments and magnetic anisotropy energy (MAE) have been calculated for both bulk and clusters, and the enhanced magnetic moment as well as the enlarged MAE have been identified in clusters. The most attractive achievement is that Mn{sub 5}Ge{sub 3} clusters show a fine half-metallic character with large energy scales. The present results may have important implications for potential applications of small Mn{sub 5}Ge{sub 3} clusters as both emerging spintronics and next-generation data-storage technologies.

Yuan, H. K.; Chen, H., E-mail: chenh@swu.edu.cn; Kuang, A. L.; Tian, C. L.; Wang, J. Z. [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China)] [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China)

2013-11-28T23:59:59.000Z

495

Hybrid model of GeV-TeV gamma ray emission from Galactic Center  

E-Print Network [OSTI]

The observations of high energy $\\gamma$-ray emission from the Galactic center (GC) by HESS, and recently by Fermi, suggest the cosmic ray acceleration in the GC and possibly around the supermassive black hole. In this work we propose a lepton-hadron hybrid model to explain simultaneously the GeV-TeV $\\gamma$-ray emission. Both electrons and hadronic cosmic rays were accelerated during the past activity of the GC. Then these particles would diffuse outwards and interact with the interstellar gas and background radiation field. The collisions between hadronic cosmic rays with gas is responsible to the TeV $\\gamma$-ray emission detected by HESS. With fast cooling in the strong radiation field, the electrons would cool down and radiate GeV photons through inverse Compton scattering off the soft background photons. This scenario provides a natural explanation of the observed GeV-TeV spectral shape of $\\gamma$-rays.

Yi-Qing Guo; Qiang Yuan; Cheng Liu; Ai-Feng Li

2014-09-14T23:59:59.000Z

496

Structural relaxation and order in ion-implanted Si and Ge  

Science Journals Connector (OSTI)

Raman scattering measurements are reported as a function of annealing temperature on heavily damaged, ion-implanted Ge and Si. Changes in the opticlike, TO Raman bandwidth of amorphous Ge are found to correlate with the estimated heat of structural relaxation obtained from the data of Donovan et al. This result is consistent with a bond-strain model, demonstrating that structural relaxation is primarily associated with short-range bond-angle ordering. The results also allow an estimate of the temperature dependence of the width of the bond-angle distribution to be obtained with annealing. The Raman spectra of ion-implanted Si indicate greater order in the amorphous state than similarly prepared amorphous Ge. Estimates of the corresponding heat of structural relaxation of amorphous Si suggest that this should be observable.

J. Fortner and J. S. Lannin

1988-06-15T23:59:59.000Z

497

Effects of orbital occupancies on the neutrinoless beta-beta matrix element of 76Ge  

E-Print Network [OSTI]

In this work we use the recently measured neutron occupancies in the 76Ge and 76Se nuclei as a guideline to define the neutron quasiparticle states in the 1p0f0g shell. We define the proton quasiparticles by inspecting the odd-mass nuclei adjacent to 76Ge and 76Se. We insert the resulting quasiparticles in a proton-neutron quasiparticle random-phase approximation (pnQRPA) calculation of the nuclear matrix element of the neutrinoless double beta (0-nu-beta-beta) decay of 76Ge. A realistic model space and effective microscopic two-nucleon interactions are used. We include the nucleon-nucleon short-range correlations and other relevant corrections at the nucleon level. It is found that the resulting 0-nu-beta-beta matrix element is smaller than in the previous pnQRPA calculations, and closer to the recently reported shell-model results.

J. Suhonen; O. Civitarese

2008-03-10T23:59:59.000Z

498

MaGe - a Geant4-based Monte Carlo framework for low-background experiments  

E-Print Network [OSTI]

A Monte Carlo framework, MaGe, has been developed based on the Geant4 simulation toolkit. Its purpose is to simulate physics processes in low-energy and low-background radiation detectors, specifically for the Majorana and Gerda $^{76}$Ge neutrinoless double-beta decay experiments. This jointly-developed tool is also used to verify the simulation of physics processes relevant to other low-background experiments in Geant4. The MaGe framework contains simulations of prototype experiments and test stands, and is easily extended to incorporate new geometries and configurations while still using the same verified physics processes, tunings, and code framework. This reduces duplication of efforts and improves the robustness of and confidence in the simulation output.

Yuen-Dat Chan; Jason A. Detwiler; Reyco Henning; Victor M. Gehman; Rob A. Johnson; David V. Jordan; Kareem Kazkaz; Markus Knapp; Kevin Kroninger; Daniel Lenz; Jing Liu; Xiang Liu; Michael G. Marino; Akbar Mokhtarani; Luciano Pandola; Alexis G. Schubert; Claudia Tomei

2008-02-06T23:59:59.000Z

499

Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance  

SciTech Connect (OSTI)

Spun cast TiO{sub 2}-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (?200?nm) devices with photocurrents at 0.5?V of 10{sup ?4} A cm{sup ?2} while the thickest devices have photocurrents at 0.5?V of 10{sup ?2} A cm{sup ?2} with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5?V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.

Church, Carena P.; Carter, Sue A., E-mail: sacarter@ucsc.edu [Department of Physics, University of California Santa Cruz, Santa Cruz, California 95064 (United States); Muthuswamy, Elayaraja; Kauzlarich, Susan M. [Department of Chemistry, University of California Davis, Davis, California 95616 (United States)] [Department of Chemistry, University of California Davis, Davis, California 95616 (United States); Zhai, Guangmei [Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024 (China)] [Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024 (China)

2013-11-25T23:59:59.000Z

500

Phase Development in a U-7 wt.% Mo vs. Al-7 wt.% Ge Diffusion Couple  

SciTech Connect (OSTI)

Fuel development for the Reduced Enrichment for Research and Test Reactors (RERTR) program has demonstrated that U-Mo alloys in contact with Al develop interaction regions with phases that have poor irradiation behavior. The addition of Si to the Al has been considered with positive results. Compositional modification to replace Si with Ge is now under evaluation to attempt to further improve irradiation behavior. In this study, the microstructural and phase development of a diffusion couple of U-7 wt.% Mo in contact with Al-7 wt.% Ge was examined by transmission electron microscopy, scanning electron microscopy and energy dispersive spectroscopy. The interdiffusion zone developed a microstructure that included the cubic-UGe3 phase and amorphous phases. The UGe3 phase was observed with and without Mo and Al solid solutioning developing a (U,Mo)(Al,Ge)3 phase.

E. Perez; D.D. Keiser, Jr.; Y.H. Sohn

2013-10-01T23:59:59.000Z