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1

Quantitative infrared analysis of hydrogen fluoride  

SciTech Connect (OSTI)

This work was performed at the Portsmouth Gaseous Diffusion Plant where hydrogen fluoride is produced upon the hydrolysis of UF{sub 6}. This poses a problem for in this setting and a method for determining the mole percent concentration was desired. HF has been considered to be a non-ideal gas for many years. D. F. Smith utilized complex equations in his HF studies in the 1950s. We have evaluated HF behavior as a function of pressure from three different perspectives. (1) Absorbance at 3877 cm{sup -1} as a function of pressure for 100% HF. (2) Absorbance at 3877 cm{sup -1} as a function of increasing partial pressure HF. Total pressure = 300 mm HgA maintained with nitrogen. (3) Absorbance at 3877 cm{sup -1} for constant partial pressure HF. Total pressure is increased to greater than 800 mm HgA with nitrogen. These experiments have shown that at partial pressures up to 35mm HgA, HIF follows the ideal gas law. The absorbance at 3877 cm{sup -1} can be quantitatively analyzed via infrared methods.

Manuta, D.M.

1997-04-01T23:59:59.000Z

2

Portsmouth DUF6 Conversion Final EIS - Appendix E: Impacts Associated with HF and CaF2 Conversion Product Sale and Use  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Portsmouth DUF Portsmouth DUF 6 Conversion Final EIS APPENDIX E: IMPACTS ASSOCIATED WITH HF AND CaF 2 CONVERSION PRODUCT SALE AND USE HF and CaF 2 Conversion Products E-2 Portsmouth DUF 6 Conversion Final EIS HF and CaF 2 Conversion Products E-3 Portsmouth DUF 6 Conversion Final EIS APPENDIX E: IMPACTS ASSOCIATED WITH HF AND CaF 2 CONVERSION PRODUCT SALE AND USE E.1 INTRODUCTION During the conversion of the depleted uranium hexafluoride (DUF 6 ) inventory to depleted uranium oxide, products having some potential for sale to commercial users would be produced. These products would include aqueous hydrogen fluoride (HF) and calcium fluoride (CaF 2 , commonly referred to as fluorspar). These products are routinely used as commercial materials, and an investigation into their potential reuse was done; results are included as part of

3

Paducah DUF6 Conversion Final EIS - Appendix E: Impacts Associated with HF and CaF2 Conversion Product Sale and Use  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Paducah DUF Paducah DUF 6 Conversion Final EIS APPENDIX E: IMPACTS ASSOCIATED WITH HF AND CaF 2 CONVERSION PRODUCT SALE AND USE HF and CaF 2 Conversion Products E-2 Paducah DUF 6 Conversion Final EIS HF and CaF 2 Conversion Products E-3 Paducah DUF 6 Conversion Final EIS APPENDIX E: IMPACTS ASSOCIATED WITH HF AND CaF 2 CONVERSION PRODUCT SALE AND USE E.1 INTRODUCTION During the conversion of the depleted uranium hexafluoride (DUF 6 ) inventory to depleted uranium oxide, products having some potential for sale to commercial users would be produced. These products would include aqueous hydrogen fluoride (HF) and calcium fluoride (CaF 2 , commonly referred to as fluorspar). These products are routinely used as commercial materials, and an investigation into their potential reuse was done; results are included as part of

4

Process for converting magnesium fluoride to calcium fluoride  

DOE Patents [OSTI]

This invention is a process for the conversion of magnesium fluoride to calcium fluoride whereby magnesium fluoride is decomposed by heating in the presence of calcium carbonate, calcium oxide or calcium hydroxide. Magnesium fluoride is a by-product of the reduction of uranium tetrafluoride to form uranium metal and has no known commercial use, thus its production creates a significant storage problem. The advantage of this invention is that the quality of calcium fluoride produced is sufficient to be used in the industrial manufacture of anhydrous hydrogen fluoride, steel mill flux or ceramic applications.

Kreuzmann, A.B.; Palmer, D.A.

1984-12-21T23:59:59.000Z

5

Magnesium fluoride recovery method  

DOE Patents [OSTI]

A method of obtaining magnesium fluoride substantially free from radioactive uranium from a slag containing the same and having a radioactivity level of at least about 7000 pCi/gm. The slag is ground to a particle size of about 200 microns or less. The ground slag is contacted with an acid under certain prescribed conditions to produce a liquid product and a particulate solid product. The particulate solid product is separated from the liquid and treated at least two more times with acid to produce a solid residue consisting essentially of magnesium fluoride substantially free of uranium and having a residual radioactivity level of less than about 1000 pCi/gm. In accordance with a particularly preferred embodiment of the invention a catalyst and an oxidizing agent are used during the acid treatment and preferably the acid is sulfuric acid having a strength of about 1.0 Normal.

Gay, Richard L. (Canoga Park, CA); McKenzie, Donald E. (Woodland Hills, CA)

1989-01-01T23:59:59.000Z

6

A Stannous Fluoride Dentifrice May Produce Greater Short Term Improvements in Measures of Inflammation Compared to a Triclosan/ Copolymer Based Dentifrice  

Science Journals Connector (OSTI)

Article Title and Bibliographic Information Anti-gingivitis effects of a novel 0.454% stabilized stannous fluoride dentifrice relative to a positive control. He T, Barker ML, Goyal CR, Biesbrock AR. Am J Dent 2012;25(3):136-40. Reviewer Harlan J. Shiau, DDS, \\{DMSc\\} Purpose/Question The authors want to determine if a novel stannous fluoride containing dentifrice is superior to a currently marketed dentifrice with respect to improvements in clinical measures of inflammation Source of Funding Industry—Proctor and Gamble, Mason, OH, United States Type of Study/Design Single site randomized controlled trial Level of Evidence Level 2: Limited-quality, patient-oriented evidence Strength of Recommendation Grade Not applicable

Harlan J. Shiau

2013-01-01T23:59:59.000Z

7

DECONTAMINATION OF PLUTONIUM FOR FLUORIDE AND CHLORIDE DURING OXALATE PRECIPITATION, FILTRATION AND CALCINATION PROCESSES  

SciTech Connect (OSTI)

Due to analytical limitations for the determination of fluoride (F) and chloride (Cl) in a previous anion exchange study, an additional study of the decontamination of Pu from F and Cl by oxalate precipitation, filtration and calcination was performed. Anion product solution from the previous impurity study was precipitated as an oxalate, filtered, and calcined to produce an oxide for analysis by pyrohydrolysis for total Cl and F. Analysis of samples from this experiment achieved the purity specification for Cl and F for the proposed AFS-2 process. Decontamination factors (DF's) for the overall process (including anion exchange) achieved a DF of {approx}5000 for F and a DF of {approx}100 for Cl. Similar experiments where both HF and HCl were spiked into the anion product solution to a {approx}5000 {micro}g /g Pu concentration showed a DF of 5 for F and a DF of 35 for Cl across the combined precipitation-filtration-calcination process steps.

Kyser, E.

2012-07-25T23:59:59.000Z

8

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents [OSTI]

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, R.B.

1987-05-01T23:59:59.000Z

9

Nitrogen Trifluoride-Based Fluoride- Volatility Separations Process: Initial Studies  

SciTech Connect (OSTI)

This document describes the results of our investigations on the potential use of nitrogen trifluoride as the fluorinating and oxidizing agent in fluoride volatility-based used nuclear fuel reprocessing. The conceptual process uses differences in reaction temperatures between nitrogen trifluoride and fuel constituents that produce volatile fluorides to achieve separations and recover valuable constituents. We provide results from our thermodynamic evaluations, thermo-analytical experiments, kinetic models, and provide a preliminary process flowsheet. The evaluations found that nitrogen trifluoride can effectively produce volatile fluorides at different temperatures dependent on the fuel constituent.

McNamara, Bruce K.; Scheele, Randall D.; Casella, Andrew M.; Kozelisky, Anne E.

2011-09-28T23:59:59.000Z

10

Thermodynamics of the conversion of calcium and magnesium fluorides to the parent metal oxides and hydrogen fluoride  

SciTech Connect (OSTI)

The authors have used thermodynamic modeling to examine the reaction of calcium fluoride (CaF{sub 2}) and magnesium fluoride (MgF{sub 2}) with water (H{sub 2}O) at elevated temperatures. The calculated, equilibrium composition corresponds to the global free-energy minimum for the system. Optimum, predicted reaction temperatures and reactant mole ratios are reported for the recovery of hydrogen fluoride (HF), a valuable industrial feedstock. Complete conversion of MgF{sub 2} is found at 1,000 C and a ratio of 40 moles of H{sub 2}O per 1 mole of MgF{sub 2}. For CaF{sub 2}, temperatures as high as 1,400 C are required for complete conversion at a corresponding mole ratio of 40 moles of H{sub 2}O per 1 mole of CaF{sub 2}. The authors discuss the presence of minor chemical constituents as well as the stability of various potential container materials for the pyrohydrolysis reactions at elevated temperatures. CaF{sub 2} and MgF{sub 2} slags are available as wastes at former uranium production facilities within the Department of Energy Complex and other facilities regulated by the Nuclear Regulatory Commission. Recovery of HF from these wastes is an example of environmental remediation at such facilities.

West, M.H.; Axler, K.M.

1997-02-01T23:59:59.000Z

11

Epigallocatechin gallate supplementation protects against renal injury induced by fluoride intoxication in rats: Role of Nrf2/HO-1 signaling  

Science Journals Connector (OSTI)

Abstract Fluoride intoxication generates free radicals, causing oxidative stress that plays a critical role in the progression of nephropathy. In the present study, we hypothesized that epigallocatechin gallate (EGCG), found in green tea, protects the kidneys of rats treated with fluoride by preventing oxidative stress, inflammation, and apoptosis. Pretreatment of fluoride-treated rats with EGCG resulted in a significant normalization of creatinine clearance and levels of urea, uric acid, and creatinine. Fluoride intoxication significantly increased renal oxidative stress markers and decreased the levels of renal enzymatic and non-enzymatic antioxidants. In addition, renal NO, TNF-?, IL-6 and NF-?B were also increased in the renal tissue of fluoride-treated rats. Further, EGCG pretreatment produced a significant improvement in renal antioxidant status and reduced lipid peroxidation, protein carbonylation and the levels of inflammatory markers in fluoride-treated kidney. Similarly, mRNA and protein analyses showed that EGCG pretreatment normalized the renal expression of Nrf2/Keap1 and its downstream regulatory proteins in fluoride-treated rat kidney. EGCG also effectively attenuated fluoride-induced renal apoptosis by the up-regulation of anti-apoptotic proteins such as Bcl-2 and down-regulation of Bax, caspase-3, caspase-9 and cytochrome c. Histology and immunohistochemical observations of Kim-1 provided further evidence that EGCG effectively protects the kidney from fluoride-mediated oxidative damage. These results suggest that EGCG ameliorates fluoride-induced oxidative renal injury by activation of the Nrf2/HO-1 pathway.

S. Thangapandiyan; S. Miltonprabu

2014-01-01T23:59:59.000Z

12

New Coordination Compounds of Cd(AsF6)2 with HF and XeF2  

Science Journals Connector (OSTI)

New Coordination Compounds of Cd(AsF6)2 with HF and XeF2 ... The total fluoride content (Ftotal-) was determined after complete decomposition of the sample by fusion with KNaCO3. ... Raman spectra of the powdered samples in sealed quartz capillaries were recorded on a Renishaw Raman Imaging Microscope System 1000 by use of the 632.8 nm exciting line of a He?Ne laser. ...

Gašper Tav?ar; Primož Benki?; Boris Žemva

2004-01-21T23:59:59.000Z

13

Reduced-temperature processing and consolidation of ultra-refractory Ta4HfC5  

SciTech Connect (OSTI)

TaC, HfC, and WC powders were subjected to high-energy milling and hot pressing to produce Ta4HfC5, a composite of Ta(4)HfC5 + 30 vol.% WC, and a composite of Ta4HfC5 + 50 vol.% WC. Sub-micron powders were examined after four different milling intervals prior to hot pressing. XRD was used to verify proper phase formation. SEM, relative density, and hardness measurements were used to examine the resulting phases. Hot pressed compacts of Ta4HfC5 showed densification as high as 98.6% along with Vickers hardness values of 21.4 GPa. Similarly, Ta4HfC5 + 30 vol.% WC exhibited 99% densification with a Vickers hardness of 22.5 GPa. These levels of densification were achieved at 1500 degrees C, which is lower than any previously reported sintering temperature for Ta4HfC5. Microhardness values measured in this study were higher than those previously reported for Ta4HfC5. The WC additions to Ta4HfC5 were found to improve densification and increase microhardness. (C) 2013 Elsevier Ltd. All rights reserved.

Gaballa, Osama [Ames Laboratory; Cook, B. A. [TRI International; Russell, A. M. [Ames Laboratory

2013-04-26T23:59:59.000Z

14

Determination of dynamic fracture parameters for HF?1 steel  

Science Journals Connector (OSTI)

Dynamic fracture parameters have been determined for two heat treatments of HF?1 steel. A gas gun was used for the experiments. Different amounts of fracture damage were produced in HF?1 steel specimens under known impact conditions. The specimens were soft recovered sectioned and polished to reveal any internal microscopic fracture. The fracturecracks were then digitized. The velocities of the 1.15? 1.59? and 2.37?mm?thick impactor disks range from 0.120 to 0.276 km/s. The specimen disks were 3.18? and 6.35?mm thick. An SRI stress wave propagationcomputer program with a brittlefracturemodel was used for calculating the dynamic fracture parameters. A series of Hugoniot experiments was performed for HF?1 steel to determine equation of state input data for the computer program. The Hugoniot elastic limits were 2.2 and 2.4 GPa for the two heat treatments.

Willis Mock Jr.; William H. Holt

1982-01-01T23:59:59.000Z

15

Calculations of Hf -electron affinity and  

E-Print Network [OSTI]

Calculations of Hf - electron affinity and photodetachment partial cross sections Lin Pan. PHYS. B 2009 #12;Calculations of Hf - electron affinity and photodetachment partial cross sections 2 1 the replacements, the subshells that are not occupied in #12;Calculations of Hf - electron affinity

Beck, Donald R.

16

The synthesis, characterization and reactivity of high oxidation state nickel fluorides  

SciTech Connect (OSTI)

The research described in this thesis has mainly addressed the challenge of the synthesis of thermodynamically unstable nickel fluorides, which cannot be made by traditional thermal methods. A low-temperature approach towards the synthesis of such transition metal fluorides exploits the greater thermodynamic stability of high oxidation states in anions and involves the use of anhydrous hydrogen fluoride (aHF) as a solvent. The general method consists of combining an aHF soluble starting material (e.g., K{sub 2}NiF{sub 6}) with a Lewis fluoroacid (e.g., BF{sub 3}), which precipitates a neutral polymeric solid state fluoride: 2 K{sup +} + NiF{sub 6}{sup 2{minus}} + BF{sub 3} {r_arrow} NiF{sub 4} + 2 BF{sub 4}{sup {minus}} + 2 K{sup +}. At room temperature, this reaction yields a different structural phase, with composition K{sub x}NiF{sub 3} (x {approx} 0.18). This material has a pseudo-hexagonal tungsten bronze structure (H{sub 0}-K{sub x}NiF{sub 3}), and is an ionic conductor, probably due to K{sup +} ions hosted in the lattice channels. R-NiF{sub 3} is capable of fluorinating a wide range of inorganic and organic substrates. These reactions have probably shed light on the mechanism of the Simons Electrochemical Fluorination (ECF) Process, an important industrial method of fluorinating organic compounds. It has long been speculated that NiF{sub 3} plays a role in the ECF process, which uses nickel electrodes in aHF solvent. K{sub 2}NiF{sub 6} also fluorinates organic compounds in aHF, but interestingly, yields different fluorinated products. The reduction of R-NiF{sub 3} and K{sub 2}NiF{sub 6} during fluorination reactions yields NiF{sub 2}. A method has been developed to regenerate NiF{sub 6}{sup 2{minus}} from NiF{sub 2}.

Chacon, L.C. [Univ. of Berkeley, CA (United States). Dept. of Chemistry]|[Lawrence Berkeley National Lab., CA (United States). Chemical Sciences Div.

1997-12-01T23:59:59.000Z

17

Phase selection and transition in Hf-rich hafnia-titania nanolaminates  

SciTech Connect (OSTI)

Hf-rich hafnia-titania nanolaminate films with five HfO{sub 2}-TiO{sub 2} bilayer architectures (0.64 to 0.94 Hf atom fraction) were sputter deposited on unheated fused silica substrates, annealed post-deposition from 573 to 1273 K, and analyzed by x-ray diffraction to study phase selection and transition. Isochronal annealing for 1 h intervals from 573 to 1173 K produces weak crystallization into monoclinic (m) HfO{sub 2} doped with Ti, i.e., m-Hf{sub 1-x}Ti{sub x}O{sub 2}. The amount of Ti incorporated into m-HfO{sub 2} depends upon both architecture and overall stoichiometry, but in all but the coarsest architecture, exceeds the bulk solubility limit of x = 0.05. Initial annealing at 1273 K produces significant crystallization into a biphasic structure, m-Hf{sub 1-x}Ti{sub x}O{sub 2} and orthorhombic (o) HfTiO{sub 4}. From bulk phase equilibrium considerations, o-HfTiO{sub 4} is expected to crystallize under conditions of interfacial bilayer mixing. However, upon further annealing at 1273 K, o-HfTiO{sub 4} proves to be unstable. o-HfTiO{sub 4} demixing inevitably occurs independent of architecture and stoichiometry, resulting in final crystallization products after 96 h at 1273 K that are m-Hf{sub 1-x}Ti{sub x}O{sub 2} with x {approx_equal} 0.05 and TiO{sub 2} doped with Hf. We suggest that o-HfTiO{sub 4} instability arises from a driving force to form domains similar to those found in the low temperature in/commensurate structures of ZrTiO{sub 4}. A detailed crystallographic group-subgroup analysis of the o (Pbcn) {yields} m (P2{sub 1}/c) transition shows that these domains can be represented by an orientation twin in the latter structure and their creation can be achieved by a single step second-order phase transition.

Cisneros-Morales, Massiel Cristina; Rubin Aita, Carolyn

2011-06-15T23:59:59.000Z

18

Polyvinylidene Fluoride-Based Membranes for Direct Methanol Fuel...  

Broader source: Energy.gov (indexed) [DOE]

Polyvinylidene Fluoride-Based Membranes for Direct Methanol Fuel Cell Applications Polyvinylidene Fluoride-Based Membranes for Direct Methanol Fuel Cell Applications Presentation...

19

Ge interactions on HfO{sub 2} surfaces and kinetically driven patterning of Ge nanocrystals on HfO{sub 2}  

SciTech Connect (OSTI)

Germanium interactions are studied on HfO{sub 2} surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO{sub 2}. Germanium chemical vapor deposition at 870 K on HfO{sub 2} produces a GeO{sub x} adhesion layer, followed by growth of semiconducting Ge{sup 0}. PVD of 0.7 ML Ge (accomplished by thermally cracking GeH{sub 4} over a hot filament) also produces an initial GeO{sub x} layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge{sup 0}. Temperature programed desorption experiments of {approx}1.0 ML Ge from HfO{sub 2} at 400-1100 K show GeH{sub 4} desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO{sub 2} where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO{sub 2} and SiO{sub 2} allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO{sub 2} surfaces that is demonstrated.

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States); Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712-0240 (United States); Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States)

2006-01-15T23:59:59.000Z

20

Mechanistic investigation of vinylic carbonfluorine bond activation of perfluorinated cycloalkenes using Cp*2ZrH2 and Cp*2ZrHF  

E-Print Network [OSTI]

using Cp*2ZrH2 and Cp*2ZrHF Bradley M. Kraft a , Eric Clot b , Odile Eisenstein b , William W behaves similarly [4]. In contrast, Cp*Rh(PMe3)H2 reacts with C6F6 by way of an SNAr2 attack by its conjugate base to give Cp*Rh(PMe3)(C6F5)H and fluoride ion, resulting in an autocatalytic reaction [5]. Cp

Jones, William D.

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

WAVE-DRIVEN SURFACE FROM HF RADAR  

E-Print Network [OSTI]

experiments using the University of Miami's Ocean Surface Current Radar (OSCR) (Shay et al., 1995, 1997 to the internal wave signals. Observations The HF radar system mapped the coastal ocean currents over a 30 Ã? 45 kmFEATURE INTERNAL CURRENTS WAVE-DRIVEN SURFACE FROM HF RADAR By Lynn K. Shay Observations from

Miami, University of

22

Current status of fluoride volatility method development  

SciTech Connect (OSTI)

The Fluoride Volatility Method is based on a separation process, which comes out from the specific property of uranium, neptunium and plutonium to form volatile hexafluorides whereas most of fission products (mainly lanthanides) and higher transplutonium elements (americium, curium) present in irradiated fuel form nonvolatile tri-fluorides. Fluoride Volatility Method itself is based on direct fluorination of the spent fuel, but before the fluorination step, the removal of cladding material and subsequent transformation of the fuel into a powdered form with a suitable grain size have to be done. The fluorination is made with fluorine gas in a flame fluorination reactor, where the volatile fluorides (mostly UF{sub 6}) are separated from the non-volatile ones (trivalent minor actinides and majority of fission products). The subsequent operations necessary for partitioning of volatile fluorides are the condensation and evaporation of volatile fluorides, the thermal decomposition of PuF{sub 6} and the finally distillation and sorption used for the purification of uranium product. The Fluoride Volatility Method is considered to be a promising advanced pyrochemical reprocessing technology, which can mainly be used for the reprocessing of oxide spent fuels coming from future GEN IV fast reactors.

Uhlir, J.; Marecek, M.; Skarohlid, J. [UJV - Nuclear Research Institute, Research Centre Rez, CZ-250 68 Husinec - Rez 130 (Czech Republic)

2013-07-01T23:59:59.000Z

23

www.eurofluor.org CTEF Comit Technique Europen du Fluor Comit Technique Europen du Fluor  

E-Print Network [OSTI]

Fluor Working group Storage, Transportation and Safety Guidelines in case of a Hydrogen Fluoride of HF Exposure Page 2 of 20 pages PREFACE Hydrogen fluoride (HF) is essential for chemical industry and therefore, there is a need for HF to be produced, transported, stored and used. HF is primarily

Saskatchewan, University of

24

Sulfuryl fluoride in the global atmosphere  

E-Print Network [OSTI]

The first calibrated high-frequency, high-precision, in situ atmospheric and archived air measurements of the fumigant sulfuryl fluoride (SO[subscript 2]F[subscript 2]) have been made as part of the Advanced Global Atmospheric ...

Muhle, J.

25

Method for fluorination of actinide fluorides and oxyfluorides using O/sub 2/F/sub 2/  

DOE Patents [OSTI]

The present invention relates generally to methods of fluorination and more particularly to the use of O/sub 2/F/sub 2/ for the preparation of actinide hexafluorides, and for the extraction of deposited actinides and fluorides and oxyfluorides thereof from reaction vessels. The experiments set forth hereinabove demonstrate that the room temperature or below use of O/sub 2/F/sub 2/ will be highly beneficial for the preparation of pure actinide hexafluorides from their respective tetrafluorides without traces of HF being present as occurs using other fluorinating agents: and decontamination of equipment previously exposed to actinides: e.g., walls, feed lines, etc.

Eller, P.G.; Malm, J.G.; Penneman, R.A.

1984-08-01T23:59:59.000Z

26

BAND STRUCTURE AND OPTICAL PROPERTIES OF MAGNESIUM FLUORIDE  

E-Print Network [OSTI]

595 BAND STRUCTURE AND OPTICAL PROPERTIES OF MAGNESIUM FLUORIDE C. JOUANIN, J. P. ALBERT and C'autres transitions expéri- mentales. Abstract. 2014 The electronic band structure of magnesium fluoride is calculated, only some qualitative investigations exist for the calcium and magnesium fluorides [1, 2]. This lack

Paris-Sud XI, Université de

27

Interfacial reaction induced phase separation in La{sub x}Hf{sub y}O films  

SciTech Connect (OSTI)

Amorphous La{sub x}Hf{sub y}O films containing La at concentrations (x) of 50 and 20% were prepared by atomic layer deposition on ultrathin SiO{sub 2} films (1 nm). We examined the electronic structures and microstructures of the La{sub x}Hf{sub y}O films by x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS), and x-ray diffraction (XRD). Phase separation into La{sub 2}O{sub 3} and HfO{sub 2} was observed in the La{sub x}Hf{sub y}O films subjected to annealing temperatures over 900 deg. C, although the mixture of La{sub 2}O{sub 3} and HfO{sub 2} is thermodynamically stable. The structural changes that occurred as the result of phase separation were dependent on the concentrations of La and Hf in the films. During the annealing treatment, silicate was produced due to interfacial reactions and the interfacial reactions were found to be dependent on the La{sub 2}O{sub 3} content in the La{sub x}Hf{sub y}O films, which has a significant influence on the phase separation process and resulting film structure.

Ma, J. W.; Lee, W. J.; Cho, M.-H. [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, K. M.; Sohn, H. C. [Department of Material Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, C. S. [Korea Research Institute of Standards and Science, Daejeon 305-540 (Korea, Republic of); Cho, H. J. [Process Development Team, Semiconductor R and D Center, Samsung Electronics Co., LTD, Gyeonggi-Do 449-711 (Korea, Republic of)

2011-06-15T23:59:59.000Z

28

Ternary ceramic alloys of Zr-Ce-Hf oxides  

DOE Patents [OSTI]

A ternary ceramic alloy is described which produces toughening of zirconia and zirconia composites through the stress transformation from tetragonal phase to monoclinic phase. This alloy, having the general formula Ce[sub x]Hf[sub y]Zr[sub 1[minus]x[minus]y]O[sub 2], is produced through the addition of appropriate amounts of ceria and hafnia to the zirconia. Typically, improved toughness is achieved with about 5 to about 15 mol % ceria and up to about 40 mol % hafnia. The preparation of alloys of these compositions are given together with data as to the densities, tetragonal phase content, hardness and fracture toughness. The alloys are useful in preparing zirconia bodies as well as reinforcing ceramic composites. 1 fig.

Becher, P.F.; Funkenbusch, E.F.

1990-11-20T23:59:59.000Z

29

Ternary ceramic alloys of ZR-CE-HF oxides  

DOE Patents [OSTI]

A ternary ceramic alloy which produces toughening of zirconia and zirconia composites through the stress transformation from tetragonal phase to monoclinic phase. This alloy, having the general formula Ce.sub.x Hf.sub.y Zn.sub.1-x-y O.sub.2, is produced through the addition of appropriate amounts of ceria and hafnia to the zirconia. Typically, improved toughness is achieved with about 5 to about 15 mol % ceria and up to about 40 mol % hafnia. The preparation of alloys of these compositions are given together with data as to the densities, tetragonal phase content, hardness and fracture toughness. The alloys are useful in preparing zirconia bodies as well as reinforcing ceramic composites.

Becher, Paul F. (Oak Ridge, TN); Funkenbusch, Eric F. (White Bear Lake, MN)

1990-01-01T23:59:59.000Z

30

Acidizing of Sandstone Reservoirs Using HF and Organic Acids  

E-Print Network [OSTI]

Mud acid, which is composed of HCl and HF, is commonly used to remove the formation damage in sandstone reservoirs. However, many problems are associated with HCl, especially at high temperatures. Formic-HF acids have served as an alternative...

Yang, Fei

2012-10-19T23:59:59.000Z

31

Stress effects on superconducting properties of the composite-processed V/sub 2/(Hf,Zr)  

SciTech Connect (OSTI)

The superconducting critical current I/sub c/ (4.2 K) of V/sub 2/(Hf,Zr) composite tape was measured under tensile load. I/sub c/ values of the V/sub 2/(Hf,Zr) composite tape do not change at all up to a strain level of 0.55%, and then decrease irreversibly with respect to strain, although the stress-strain curves for these tapes exhibit no irreversible behavior. Many cracks were observed in the V/sub 2/(Hf,Zr) layer of the composite tape strained up to 0.6%. Thermal expansion data indicate that the residual tensile stress may be produced in the V/sub 2/(Hf,Zr) layer by the large thermal contraction of the layer and may reduce the strain tolerance of the composite tape.

Inoue, K.; Wada, H.; Kuroda, T.; Tachikawa, K.

1981-06-01T23:59:59.000Z

32

Stellar (n,?) cross sections of Hf174 and radioactive Hf182  

Science Journals Connector (OSTI)

The stellar neutron capture cross sections of Hf174 and the radioactive isotope Hf182 (t1/2=8.9×106 yr) have been measured for the first time at kT=25 keV by means of the activation technique. These isotopes originate from different stellar scenarios, Hf174 from the p-process by a series of photodisintegration reactions of heavier seed nuclei, and Hf182 from the s-process in asymptotic giant branch stars as well as from the r-process in supernovae or neutron star mergers. Both activation measurements were carried out at the Karlsruhe Van de Graaff accelerator using the Li7(p,n)Be7 reaction for simulating a Maxwellian neutron spectrum corresponding to a thermal energy of kT=25 keV. The Maxwellian averaged cross sections (MACS) extrapolated to the common s-process temperatures at kT=30 keV yield ???30=983±46 and 141±8 mb for Hf174 and Hf182, respectively.

C. Vockenhuber; I. Dillmann; M. Heil; F. Käppeler; N. Winckler; W. Kutschera; A. Wallner; M. Bichler; S. Dababneh; S. Bisterzo; R. Gallino

2007-01-12T23:59:59.000Z

33

Synthesis, structure, and reactivity of high oxidation state silver fluorides and related compounds  

SciTech Connect (OSTI)

This thesis has been largely concerned with defining the oxidizing power of Ag(III) and Ag(II) in anhydrous hydrogen fluoride (aHF) solution. Emphasis was on cationic species, since in a cation the electronegativity of a given oxidation state is greatest. Cationic Ag(III) solv has a short half life at ordinary temperatures, oxidizing the solvent to elemental fluorine with formation of Ag(II). Salts of such a cation have not yet been preparable, but solutions which must contain such a species have proved to be effective and powerful oxidizers. In presence of PtF{sub 6}{sup {minus}}, RuF{sub 6}{sup {minus}}, or RhF{sub 6}{sup {minus}}, Ag(III) solv effectively oxidizes the anions to release the neutral hexafluorides. Such reactivity ranks cationic Ag(III) as the most powerfully oxidizing chemical agent known as far. Unlike its trivalent relative Ag (II) solv is thermodynamically stable in acid aHF. Nevertheless, it oxidizes IrF{sub 6}{sup {minus}} to IrF{sub 6} at room temperature, placing its oxidizing potential not more than 2 eV below that of cationic Ag(III). Range of Ag{sup 2+} (MF{sub 6}{sup {minus}}){sub 2} salts attainable in aHF has been explored. An anion must be stable with respect to electron loss to Ag{sup 2+}. The anion must also be a poor F{sup {minus}} donor; otherwise, either AgF{sup +} salts or AgF{sub 2} are generated.

Lucier, G.M.

1995-05-01T23:59:59.000Z

34

Eye Cancer Incidence in U.S. States and Access to Fluoridated Water  

Science Journals Connector (OSTI)

...S. States and Access to Fluoridated Water Gary G. Schwartz 1 2 * * Corresponding...of the population receiving fluoridated water; that is, higher rates were found in...inversely with the availability of fluoridated water. Materials and Methods Uveal melanoma...

Gary G. Schwartz

2014-09-01T23:59:59.000Z

35

Chemical analysis of HfO{sub 2}/Si (100) film systems exposed to NH{sub 3} thermal processing  

SciTech Connect (OSTI)

Nitrogen incorporation in HfO{sub 2}/SiO{sub 2} films utilized as high-k gate dielectric layers in advanced metal-oxide-semiconductor field effect transistors has been investigated. Thin HfO{sub 2} blanket films deposited by atomic layer deposition on either SiO{sub 2} or NH{sub 3} treated Si (100) substrates have been subjected to NH{sub 3} and N{sub 2} anneal processing. Several high resolution techniques including electron microscopy with electron energy loss spectra, grazing incidence x-ray diffraction, and synchrotron x-ray photoelectron spectroscopy have been utilized to elucidate chemical composition and crystalline structure differences between samples annealed in NH{sub 3} and N{sub 2} ambients as a function of temperature. Depth profiling of core level binding energy spectra has been obtained by using variable kinetic energy x-ray photoelectron spectroscopy with tunable photon energy. An 'interface effect' characterized by a shift of the Si{sup 4+} feature to lower binding energy at the HfO{sub 2}/SiO{sub 2} interface has been detected in the Si 1s spectra; however, no corresponding chemical state change has been observed in the Hf 4f spectra acquired over a broad range of electron take-off angles and surface sensitivities. The Si 2p spectra indicate Si-N bond formation beneath the HfO{sub 2} layer in the samples exposed to NH{sub 3} anneal. The NH{sub 3} anneal ambient is shown to produce a metastable Hf-N bond component corresponding to temperature driven dissociation kinetics. These findings are consistent with elemental profiles across the HfO{sub 2}/Si(100) interface determined by electron energy loss spectroscopy measurements. X-ray diffraction measurements on similarly treated films identify the structural changes resulting from N incorporation into the HfO{sub 2} films.

Lysaght, Patrick S.; Barnett, Joel; Bersuker, Gennadi I.; Woicik, Joseph C.; Fischer, Daniel A.; Foran, Brendan; Tseng, Hsing-Huang; Jammy, Raj [Front End Process Division, SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499 (United States); National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Physical Characterization Laboratory, Advanced Technology Development Facility, 2706 Montopolis Drive, Austin, Texas 78741-6499 (United States); Front End Process Division, SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499 (United States)

2007-01-15T23:59:59.000Z

36

Examination of Liquid Fluoride Salt Heat Transfer  

SciTech Connect (OSTI)

The need for high efficiency power conversion and energy transport systems is increasing as world energy use continues to increase, petroleum supplies decrease, and global warming concerns become more prevalent. There are few heat transport fluids capable of operating above about 600oC that do not require operation at extremely high pressures. Liquid fluoride salts are an exception to that limitation. Fluoride salts have very high boiling points, can operate at high temperatures and low pressures and have very good heat transfer properties. They have been proposed as coolants for next generation fission reactor systems, as coolants for fusion reactor blankets, and as thermal storage media for solar power systems. In each case, these salts are used to either extract or deliver heat through heat exchange equipment, and in order to design this equipment, liquid salt heat transfer must be predicted. This paper discusses the heat transfer characteristics of liquid fluoride salts. Historically, heat transfer in fluoride salts has been assumed to be consistent with that of conventional fluids (air, water, etc.), and correlations used for predicting heat transfer performance of all fluoride salts have been the same or similar to those used for water conventional fluids an, water, etc). A review of existing liquid salt heat transfer data is presented, summarized, and evaluated on a consistent basis. Less than 10 experimental data sets have been found in the literature, with varying degrees of experimental detail and measured parameters provided. The data has been digitized and a limited database has been assembled and compared to existing heat transfer correlations. Results vary as well, with some data sets following traditional correlations; in others the comparisons are less conclusive. This is especially the case for less common salt/materials combinations, and suggests that additional heat transfer data may be needed when using specific salt eutectics in heat transfer equipment designs. All of the data discussed above were taken under forced convective conditions (both laminar and turbulent). Some recent data taken at ORNL under free convection conditions are also presented and results discussed. This data was taken using a simple crucible experiment with an instrumented nickel heater inserted in the salt to induce natural circulation within the crucible. The data was taken over a temperature range of 550oC to 650oC in FLiNaK salt. This data covers both laminar and turbulent natural convection conditions, and is compared to existing forms of natural circulation correlations.

Yoder Jr, Graydon L [ORNL] [ORNL

2014-01-01T23:59:59.000Z

37

Electrooptic parameters of the hydrogen bridge in B…HF complexes [B=HF, H2O, (CH3)2NCHO  

Science Journals Connector (OSTI)

The density-functional method [B3LYP/6-31++G(d,p)] is used to calculate molecular associates with various enthalpies of formation: HF…HF, H2O…HF, and...

Yukhnevich, G V; Tsoi, O Yu

2007-01-01T23:59:59.000Z

38

Scintillation of rare earth doped fluoride nanoparticles  

SciTech Connect (OSTI)

The scintillation response of rare earth (RE) doped core/undoped (multi-)shell fluoride nanoparticles was investigated under x-ray and alpha particle irradiation. A significant enhancement of the scintillation response was observed with increasing shells due: (i) to the passivation of surface quenching defects together with the activation of the REs on the surface of the core nanoparticle after the growth of a shell, and (ii) to the increase of the volume of the nanoparticles. These results are expected to reflect a general aspect of the scintillation process in nanoparticles, and to impact radiation sensing technologies that make use of nanoparticles.

Jacobsohn, L. G.; McPherson, C. L.; Sprinkle, K. B.; Ballato, J. [Center for Optical Materials Science and Engineering Technologies (COMSET), and School of Materials Science and Engineering, Clemson University, Clemson, South Carolina 29634 (United States); Yukihara, E. G. [Physics Department, Oklahoma State University, Stillwater, Oklahoma 74078-3072 (United States); DeVol, T. A. [Department of Environmental Engineering and Earth Sciences, Clemson University, Clemson, South Carolina 29634-0905 (United States)

2011-09-12T23:59:59.000Z

39

Hydrogen Fluoride Capture by Imidazolium Acetate Ionic Liquid  

E-Print Network [OSTI]

Extraction of hydrofluoric acid (HF) from oils is a drastically important problem in petroleum industry, since HF causes quick corrosion of pipe lines and brings severe health problems to humanity. Some ionic liquids (ILs) constitute promising scavenger agents thanks to strong binding to polar compounds and tunability. PM7-MD simulations and hybrid density functional theory are employed here to consider HF capture ability of ILs. Discussing the effects and impacts of the cation and the anion separately and together, I will evaluate performance of imidazolium acetate and outline systematic search guidelines for efficient adsorption and extraction of HF.

Chaban, Vitaly

2015-01-01T23:59:59.000Z

40

C15 intermetallic compounds HfV{sub 2}+Nb  

SciTech Connect (OSTI)

Phase fields and equilibria in the Hf-V-Nb system were determined using a combination-of SEM, EDS and x-ray diffraction. The structural stability of the C15 HfV{sub 2+}Nb was studied by x-ray diffraction and specific heat measurements. The elastic constants of C15 HfV{sub 2+}Nb were measured by the resonant ultrasound spectroscopy technique. First-principle quantum mechanical calculations based on the local-density-functional theory have been employed to study the total energy and electronic structure of C15 HfV{sub 2}, which can be used to understand the physical and metallurgical properties of the C15 intermetallics HfV{sub 2+}Nb.

Chu, F.; Chen, S.P.; Mitchell, T.E. [Los Alamos National Lab., NM (United States); Pope, D.P. [Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Materials Science and Engineering; Liu, C.T. [Oak Ridge National Lab., TN (United States)

1994-12-31T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Large area electron beam pumped krypton fluoride laser amplifier  

SciTech Connect (OSTI)

Nike is a recently completed multi-kilojoule krypton fluoride (KrF) laser that has been built to study the physics of direct drive inertial confinement fusion. This paper describes in detail both the pulsed power and optical performance of the largest amplifier in the Nike laser, the 60 cm amplifier. This is a double pass, double sided, electron beam-pumped system that amplifies the laser beam from an input of 50 J to an output of up to 5 kJ. It has an optical aperture of 60 cm {times} 60 cm and a gain length of 200 cm. The two electron beams are 60 cm high {times} 200 cm wide, have a voltage of 640 kV, a current of 540 kA, and a flat top power pulse duration of 250 ns. A 2 kG magnetic field is used to guide the beams and prevent self-pinching. Each electron beam is produced by its own Marx/pulse forming line system. The amplifier has been fully integrated into the Nike system and is used on a daily basis for laser-target experiments. {copyright} {ital 1997 American Institute of Physics.}

Sethian, J.D.; Obenschain, S.P.; Gerber, K.A.; Pawley, C.J.; Serlin, V.; Sullivan, C.A. [Plasma Physics Division, Naval Research Laboratory, Washington DC 20375 (United States)] [Plasma Physics Division, Naval Research Laboratory, Washington DC 20375 (United States); Webster, W. [Research Support Instruments, 4325-B Forbes Boulevard, Lanham, Maryland 20706 (United States)] [Research Support Instruments, 4325-B Forbes Boulevard, Lanham, Maryland 20706 (United States); Deniz, A.V.; Lehecka, T. [Science Applications International Corporation, 1710 Goodridge Drive, McLean, Virginia 22102 (United States)] [Science Applications International Corporation, 1710 Goodridge Drive, McLean, Virginia 22102 (United States); McGeoch, M.W. [PLEX Corporation, 21 Addington Road, Brookline, Massachusetts 02146 (United States)] [PLEX Corporation, 21 Addington Road, Brookline, Massachusetts 02146 (United States); Altes, R.A.; Corcoran, P.A.; Smith, I.D. [Pulse Sciences, Incorporated, 600 McCormick Street, San Leandro, California 94577 (United States)] [Pulse Sciences, Incorporated, 600 McCormick Street, San Leandro, California 94577 (United States); Barr, O.C. [Pharos Technical Enterprises, 1603 Barcelona Street, Livermore, California 94550 (United States)] [Pharos Technical Enterprises, 1603 Barcelona Street, Livermore, California 94550 (United States)

1997-06-01T23:59:59.000Z

42

Arsenic and fluoride in the groundwater of Mexico  

Science Journals Connector (OSTI)

Concentrations of arsenic and fluoride above Mexican drinking water standards have been detected in aquifers of various areas of Mexico. This contamination has been found to be mainly caused by natural sources...

M. A. Armienta; N. Segovia

2008-08-01T23:59:59.000Z

43

Characterization of double walled carbon nanotubes-polyvinylidene fluoride nanocomposites  

E-Print Network [OSTI]

One of the main objectives of this thesis is to disperse double-walled carbon nanotubes (DWNT) in a polyvinylidene fluoride (PVDF) matrix, and to characterize the resulting composite using electrical, thermal, and mechanical characterization...

Almasri, Atheer Mohammad

2007-04-25T23:59:59.000Z

44

Theoretical Assessment of 178m2Hf De-Excitation  

SciTech Connect (OSTI)

This document contains a comprehensive literature review in support of the theoretical assessment of the {sup 178m2}Hf de-excitation, as well as a rigorous description of controlled energy release from an isomeric nuclear state.

Hartouni, E P; Chen, M; Descalle, M A; Escher, J E; Loshak, A; Navratil, P; Ormand, W E; Pruet, J; Thompson, I J; Wang, T F

2008-10-06T23:59:59.000Z

45

One- and two-particle effects in the electronic and optical spectra of barium fluoride  

Science Journals Connector (OSTI)

One- and two-particle effects in the electronic and optical spectra of the fluoride compound BaF2 are determined using density functional theory and a many-body perturbation scheme. A wide energy range has been considered, including the visible and all the ultraviolet region. The GW approximation for the electronic self-energy has been used to tackle the one-particle excitations problem, enabling us to determine the electronic energy bands and densities of states of this fluoride. For the optical properties, the two-particle effects calculated with the Bethe–Salpeter scheme turn out to play a fundamental role. A bound exciton positioned at about 1.5 eV below the one-particle gap is forecasted. The optical absorption and the electron energy loss spectra together with other optical functions are in good agreement with the experimental results up to 15 eV. In fact, for this part of the spectrum a self-consistent one-particle scheme along with the Bethe–Salpeter approach produces notable results. Less satisfactory results for the higher energy region in the spectra have been produced with the proposed method. Possible causes of these discrepancies are fully discussed.

Emiliano Cadelano; Jürgen Furthmüller; Giancarlo Cappellini; Friedhelm Bechstedt

2014-01-01T23:59:59.000Z

46

Growth of HfO{sub 2} films using an alternate reaction of HfCl{sub 4} and O{sub 2} under atmospheric pressure  

SciTech Connect (OSTI)

HfO{sub 2} films were deposited onto a Si(100) substrate using an alternate reaction of HfCl{sub 4} and O{sub 2} under atmospheric pressure. Self-limiting growth of the HfO{sub 2} was achieved in the range of the growth temperature above 873K. The X-ray diffraction of the HfO{sub 2} films showed a typical diffraction pattern assigned to the monoclinic polycrystalline phase. Residual chloride concentration in HfO{sub 2} films were not higher than 0.1at%. When the growth temperature was 973K, the HfSiO{sub x} is formed in HfO{sub 2} film. This gives effective permittivity value of 9.6 for the HfO{sub 2} film grown at 573K.

Takahashi, Naoyuki [Department of Materials Science and Technology, Faculty of Engineering Shizuoka University, 3-5-1 Johoku, Hamamatu, Shizuoka 432-8561 (Japan)]. E-mail: tntakah@ipc.shizuoka.ac.jp; Nonobe, Shinichi [Department of Materials Science and Technology, Faculty of Engineering Shizuoka University, 3-5-1 Johoku, Hamamatu, Shizuoka 432-8561 (Japan); Nakamura, Takato [Department of Materials Science and Technology, Faculty of Engineering Shizuoka University, 3-5-1 Johoku, Hamamatu, Shizuoka 432-8561 (Japan)

2004-11-01T23:59:59.000Z

47

Kinetic and equilibrium studies of fluoride sorption onto surfactant-modified smectites  

Science Journals Connector (OSTI)

...be found in waste-water from the fluoride chemical...fluoride from drinking water is by liming and the...Sehn, 2008) and electrodialysis (Adhikary et al...fluoride from drinking water. However, the shortcomings...procedures involved in the treatment. Adsorption is also...

S. Gamoudi; N. Frini-Srasra; E. Srasra

48

Inhibition of the ATPase activity of Escherichia coli ATP synthase by magnesium fluoride  

E-Print Network [OSTI]

Inhibition of the ATPase activity of Escherichia coli ATP synthase by magnesium fluoride Zulfiqar activity of Escherichia coli ATP synthase by magnesium fluoride (MgFx) was studied. Wild-type F1-ATPase synthesis mechanism; Magnesium fluoride; ATPase inhibition; Transition state analog 1. Introduction ATP

Zulfiqar Ahmad

49

THE RAMAN SPECTRUM OF MAGNESIUM FLUORIDE By R. S. KRISHNAN and R. S. KATIYAR,  

E-Print Network [OSTI]

627. THE RAMAN SPECTRUM OF MAGNESIUM FLUORIDE By R. S. KRISHNAN and R. S. KATIYAR, Department, NOVEMBRE 1965, I Magnesium fluoride, which occurs in nature as the mineral sellaite, crystallizes spectrum of magnesium fluoride (MgF2) taken with a medium Quartz spectrograph. (b) Its microphotometer

Paris-Sud XI, Université de

50

Growth mechanism difference of sputtered HfO{sub 2} on Ge and on Si  

SciTech Connect (OSTI)

HfO{sub 2} films were deposited by the reactive sputtering on Ge and Si substrates simultaneously, and we found both the interface layer and the HfO{sub 2} film were thinner on Ge substrate than those on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO{sub 2} film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before the reactive sputtering process. The role of metallic Hf in these phenomena is understandable by assuming the formation of a volatile Hf-Ge-O ternary compound at the early stage of the film growth. This result shows that the HfO{sub 2}/Ge system has an advantage over the HfO{sub 2}/Si system from the viewpoint of further reduction of the gate oxide film thickness.

Kita, Koji; Kyuno, Kentaro; Toriumi, Akira [Department of Materials Science, School of Engineering, University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2004-07-05T23:59:59.000Z

51

Early (4.5 Ga) formation of terrestrial crust: LuHf, 18 thermometry results for Hadean zircons  

E-Print Network [OSTI]

the characterization of 176 Hf/177 Hf initial ratios (Hf ) in Hadean zircons by acquiring a further 116 laser ablationEarly (4.5 Ga) formation of terrestrial crust: Lu­Hf, 18 O, and Ti thermometry results for Hadean Editor: R.W. Carlson Available online 19 February 2008 Abstract Large deviations in Hf(T) from bulk

Harrison, Mark

52

Status of the ADMX and ADMX-HF experiments  

E-Print Network [OSTI]

The Axion Dark Matter eXperiment (ADMX) is in the midst of an upgrade to reduce its system noise temperature. ADMX-HF (High Frequency) is a second platform specifically designed for higher mass axions and will serve as an innovation test-bed. Both will be commissioning in 2013 and taking data shortly thereafter. The principle of the experiment, current experimental limits and the status of the ADMX/ADMX-HF program will be described. R&D on hybrid superconducting cavities will be discussed as one example of an innovation to greatly enhance sensitivity.

Karl van Bibber; Gianpaolo Carosi

2013-04-29T23:59:59.000Z

53

Status of the ADMX and ADMX-HF experiments  

E-Print Network [OSTI]

The Axion Dark Matter eXperiment (ADMX) is in the midst of an upgrade to reduce its system noise temperature. ADMX-HF (High Frequency) is a second platform specifically designed for higher mass axions and will serve as an innovation test-bed. Both will be commissioning in 2013 and taking data shortly thereafter. The principle of the experiment, current experimental limits and the status of the ADMX/ADMX-HF program will be described. R&D on hybrid superconducting cavities will be discussed as one example of an innovation to greatly enhance sensitivity.

van Bibber, Karl

2013-01-01T23:59:59.000Z

54

Fluoride based cathodes and electrolytes for high energy thermal batteries  

SciTech Connect (OSTI)

A research and development program is being conducted at the Saft Advanced Technologies Division in Hunt Valley, MD to double the energy density of a thermal battery. A study of high voltage cathodes to replace iron disulfide is in progress. Single cells are being studied with a lithium anode and either a copper(II) fluoride, silver(II) fluoride, or iron(III) fluoride cathode. Due to the high reactivity of these cathodes, conventional alkali metal chloride and bromide salt electrolytes must be replaced by alkali metal fluoride electrolytes. Parametric studies using design-of-experiments matrices will be performed so that the best cathode for an improved battery design can be selected. Titanium hardware for the design will provide a higher strength to weight ratio with lower emissivity than conventional stainless steel. The battery will consist of two power sections. The goals are battery activation in less than 0.2 s, 88 Wh/kg, 1,385 W/kg, and 179 Wh/L over an environmental temperature range of {minus}40 C to +70 C.

Briscoe, J.D.

1998-07-01T23:59:59.000Z

55

Structural studies of magnesium nitride fluorides by powder neutron diffraction  

SciTech Connect (OSTI)

Samples of ternary nitride fluorides, Mg{sub 3}NF{sub 3} and Mg{sub 2}NF have been prepared by solid state reaction of Mg{sub 3}N{sub 2} and MgF{sub 2} at 1323-1423 K and investigated by powder X-ray and powder neutron diffraction techniques. Mg{sub 3}NF{sub 3} is cubic (space group: Pm3m) and has a structure related to rock-salt MgO, but with one cation site vacant. Mg{sub 2}NF is tetragonal (space group: I4{sub 1}/amd) and has an anti-LiFeO{sub 2} related structure. Both compounds are essentially ionic and form structures in which nitride and fluoride anions are crystallographically ordered. The nitride fluorides show temperature independent paramagnetic behaviour between 5 and 300 K. - Graphical abstract: Definitive structures of the ternary magnesium nitride fluorides Mg{sub 3}NF{sub 3} and the lower temperature polymorph of Mg{sub 2}NF have been determined from powder neutron diffraction data. The nitride halides are essentially ionic and exhibit weak temperature independent paramagnetic behaviour. Highlights: Black-Right-Pointing-Pointer Definitive structures of Mg{sub 3}NF{sub 3} and Mg{sub 2}NF were determined by neutron diffraction. Black-Right-Pointing-Pointer Nitride and fluoride anions are crystallographically ordered in both structures. Black-Right-Pointing-Pointer Both compounds exhibit weak, temperature independent paramagnetic behaviour. Black-Right-Pointing-Pointer The compounds are essentially ionic with ionicity increasing with F{sup -} content.

Brogan, Michael A. [School of Chemistry, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hughes, Robert W. [WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Smith, Ronald I. [ISIS Pulsed Neutron and Muon Source, Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Oxford, Didcot OX11 0QX (United Kingdom); Gregory, Duncan H., E-mail: Duncan.Gregory@glasgow.ac.uk [WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ (United Kingdom)

2012-01-15T23:59:59.000Z

56

Effect of Al addition on the microstructure and electronic structure of HfO2 film  

E-Print Network [OSTI]

Effect of Al addition on the microstructure and electronic structure of HfO2 film X. F. Wang investigated the microstructures and electronic structures of a series of hafnium aluminate HfAlO films with Al concentration ranging from 0% to 100%. When the films evolve from pure HfO2 to pure Al2O3 by increasing

Gong, Xingao

57

Excited States of Hf174 from the Decay of Ta174  

Science Journals Connector (OSTI)

The Ta174 activity was produced via the Lu175(?,5n)Ta174 reaction with 66-MeV ? particles from the Crocker Nuclear Laboratory 76-in. isochronous cyclotron. After removal of the F18, the half-lives were deduced by direct measurements. The half-lives of approximately 200 transitions, ranging in energy from 60 to 3000 keV, were identified using Ge(Li) detectors. Over 95% of these lines were assigned to Hf175, Hf174, or Lu173. The half-life of Ta174 was measured to be 71.5 ± 6.5 min. Ge(Li)-Nal coincidence work has been done. The conversion-electron spectrum was first measured using a 3-mm Si(Li) detector with a cooled field-effect transistor and then using the same type of detector plus a magnet.The energies and ? intensities of the 100 transitions attributed to the decay of Ta174 were measured. 32 conversion coefficients were determined. 16 levels with spins and parities are proposed on the basis of ? intensities, coincidence information, and conversion coefficients. 16 more levels are proposed on the basis of energy sums. Spins and parities for four of these levels are suggested. 60 transitions are placed in the decay scheme. A very strong ? feed to the 4+ level of the ground-state rotational band was observed. M1 enhancement in the ? vibrational bands and K-forbidden ? transitions are discussed.

M. T. Gillin and N. F. Peek

1971-10-01T23:59:59.000Z

58

Determination of naphthenic acids in California crudes and refinery waste waters by fluoride ion chemical ionization mass spectrometry  

SciTech Connect (OSTI)

A method based on negative ion chemical ionization mass spectrometry using fluoride (F/sup -/) ions produced from NF/sub 3/ reagent gas has been applied to the analysis of naphthenic acids in California crude oils and refinery waste waters. Since complex mixtures of naphthenic acids cannot be separated into individual components, only the determination of relative distribution of acids classified by the hydrogen deficiency was possible. The identities and relative distribution of paraffinic and mono-, di-, tri, and higher polycyclic acids were obtained from the intensities of the carboxylate (RCOO/sup -/) ions.

Dzidic, I.; Somerville, A.C.; Raia, J.C.; Hart, H.V.

1988-07-01T23:59:59.000Z

59

Luminescence from Edge Fracture in Shocked Lithium Fluoride Crystals  

SciTech Connect (OSTI)

Light emitted from a [100] lithium fluoride crystal was characterized under shock wave compression to 28GPa followed by complete stress release at the edges. The light was examined using time-gated optical spectrometry and imaging, time-resolved optical emission measurements, and hydrodynamic modeling. The shock arrival at the circumference of the crystal was delayed relative to the center so that the two regions could be studied at different times. The majority of the light emission originated when the shock waves released at the circumference of the crystal. Unlike previously reported results for shocked lithium fluoride, we found that the light spectrum is not strictly broad band, but has spectral lines associated with atomic lithium in addition to a broad band background. Also, the emission spectrum depends strongly on the gas surrounding the sample. Based on our observations, the line emission appears to be related to fracture of the lithium fluoride crystal from the shock wave releasing at the edges. Experimenters frequently utilize lithium fluoride crystals as transparent windows for observing shock compressed samples. Because of the experimental geometries used, the shock wave in such cases often reaches the circumference of the window at nearly the same moment as when it reaches the center of the sample-window interface. Light generated at the circumference could contaminate the measurement at the interface when this light scatters into the observed region. This background light may be reduced or avoided using experimental geometries which delay the arrival of the shock wave at the edges of the crystal.

Turley, W. D. [NSTec; Stevens, G. D. [NSTec; Capelle, G. A. [NSTec; Grover, M. [NSTec; Holtkamp, D. B. [LANL; LaLone, B. M. [NSTec; Veeser, L. R. [NSTec, LANL

2013-04-01T23:59:59.000Z

60

Intrinsic metastability of orthorhombic HfTiO{sub 4} in thin film hafnia-titania  

SciTech Connect (OSTI)

Orthorhombic (o) HfTiO{sub 4} is crystallized when sputter deposited hafnia-titania nanolaminates with ultrathin layers and bilayer (HfO{sub 2}){sub 0.5}(TiO{sub 2}){sub 0.5} composition are annealed between 573 and 1173 K. However, o-HfTiO{sub 4} demixes after annealing at 1273 K, a result not predicted from bulk thermodynamics. X-ray diffraction and Raman microscopy are used here to study structural changes as o-HfTiO{sub 4} demixes upon long-term annealing at 1273 K into Ti-doped monoclinic HfO{sub 2} and Hf-doped rutile TiO{sub 2}. We conclude that o-HfTiO{sub 4} crystallized at low temperature is intrinsically metastable. A space group symmetry analysis shows that demixing can be accomplished by a continuous phase transition chain.

Cisneros-Morales, Massiel Cristina; Aita, Carolyn Rubin [Department of Chemistry and Biochemistry, University of Wisconsin-Milwaukee, P.O. Box 413, Milwaukee, Wisconsin 53201 (United States)

2011-01-31T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Comparison of the Ca+HF(DF) and Sr+HF(DF) reaction dynamics Rong Zhang, David J. Rakestraw,a) Kenneth G. McKendrick,b) and Richard N. Zare  

E-Print Network [OSTI]

Comparison of the Ca+HF(DF) and Sr+HF(DF) reaction dynamics Rong Zhang, David J. Rakestraw family, Ca and Sr with rovibrationally selected HF or DF, has been carried out under single-collision conditions. A thermal beam of the alkaline earth atoms, Ca or Sr, is fired into a low-pressure gas of HF

Zare, Richard N.

62

Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using HfO2 ceramic target  

SciTech Connect (OSTI)

Hafnium oxide (HfO?) thin films have been made by radio-frequency (rf) magnetron-sputtering onto Si(100) substrates under varying growth temperature (Ts). HfO? ceramic target has been employed for sputtering while varying the Ts from room temperature to 500?C during deposition. The effect of Ts on the growth and microstructure of deposited HfO? films has been studied using grazing incidence x-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), and high-resolution scanning electron microscopy (HR-SEM) coupled with energy dispersive x-ray spectrometry (EDS). The results indicate that the effect of Ts is significant on the growth, surface and interface structure, morphology and chemical composition of the HfO? films. Structural characterization indicates that the HfO? films grown at Ts<200 ?C are amorphous while films grown at Ts>200 ?C are nanocrystalline. An amorphous-to-crystalline transition occurs at Ts=200 ?C. Nanocrystalline HfO? films crystallized in a monoclinic structure with a (-111) orientation. XPS measurements indicated the high surface-chemical quality and stoichiometric nature of the grown HfO? films. An interface layer (IL) formation occurs due to reaction at the HfO?-Si interface for HfO? films deposited at Ts>200 ?C. The thickness of IL increases with increasing Ts. XPS and EDS at the HfO?-Si cross-section indicate the IL is a (Hf, Si)-O compound. The electrical characterization using capacitance-voltage measurements indicate that the dielectric constant decreases from 25 to 16 with increasing Ts.

Aguirre, B.; Vemuri, R. S.; Zubia, David; Engelhard, Mark H.; Shutthanandan, V.; Kamala Bharathi, K.; Ramana, Chintalapalle V.

2011-01-01T23:59:59.000Z

63

490 C4H9FS Tetrahydrothiophene - hydrogen fluoride (1/1)  

Science Journals Connector (OSTI)

It contains molecular constants (high-resolution spectroscopic data) of C4H9FS Tetrahydrothiophene - hydrogen fluoride (1/1)

J. Demaison

2011-01-01T23:59:59.000Z

64

E-Print Network 3.0 - aluminium fluorides Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Delhi Collection: Biotechnology ; Biology and Medicine 63 The aqueous geochemistry of gallium, germanium, indium and scandium Summary: , fluoride, sulfate and phosphate, and...

65

E-Print Network 3.0 - arsenic fluorides Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(F), selenium (Se), uranium (U), and radium... : arsenic, fluoride, nitrate, selenium, uranium, and ... Source: Scanlon, Bridget R. - Bureau of Economic Geology, Department of...

66

Use of GPS network data for HF Doppler measurements interpretation  

E-Print Network [OSTI]

The method of measurement of Doppler frequency shift of ionospheric signal - HF Doppler technique - is one of well-known and widely used methods of ionosphere research. It allows to research various disturbances in the ionosphere. There are some sources of disturbances in the ionosphere. These are geomagnetic storms, solar flashes, metrological effects, atmospheric waves. This method allows to find out the influence of earthquakes, explosions and other processes on the ionosphere, which occur near to the Earth. HF Doppler technique has the high sensitivity to small frequency variations and the high time resolution, but interpretation of results is difficult. In this work we make an attempt to use GPS data for Doppler measurements interpretation. Modeling of Doppler frequency shift variations with use of TEC allows to separate ionosphere disturbances of medium scale.

Petrova, Inna R; Latypov, Ruslan R

2014-01-01T23:59:59.000Z

67

CMS HF calorimeter PMTs and Xi(c)+ lifetime measurement  

SciTech Connect (OSTI)

This thesis consists of two parts: In the first part we describe the Photomultiplier Tube (PMT) selection and testing processes for the Hadronic Forward (HF) calorimeter of the CMS, a Large Hadron Collier (LHC) experiment at CERN. We report the evaluation process of the candidate PMTs from three different manufacturers, the complete tests performed on the 2300 Hamamatsu PMTs which will be used in the HF calorimeter, and the details of the PMT Test Station that is in University of Iowa CMS Laboratories. In the second part we report the {Xi}{sub c}{sup +} lifetime measurement from SELEX, the charm hadro-production experiment at Fermilab. Based upon 301 {+-} 31 events from three di.erent decay channels, by using the binned maximum likelihood technique, we observe the lifetime of {Xi}{sub c}{sup +} as 427 {+-} 31 {+-} 13 fs.

Akgun, Ugur; /Iowa U.

2003-12-01T23:59:59.000Z

68

Kinetic modelling of krypton fluoride laser systems  

SciTech Connect (OSTI)

A kinetic model has been developed for the KrF* rare gas halide laser system, specifically for electron-beam pumped mixtures of krypton, fluorine, and either helium or argon. The excitation produced in the laser gas by the e-beam was calculated numerically using an algorithm checked by comparing the predicted ionization yields in the pure rare gases with their experimental values. The excitation of the laser media by multi-kilovolt x-rays was also modeled and shown to be similar to that produced by high energy electrons. A system of equations describing the transfer of the initial gas excitation into the laser upper level was assembled using reaction rate constants from both experiment and theory. A one-dimensional treatment of the interaction of the laser radiation with the gas was formulated which considered spontaneous and stimulated emission and absorption. The predictions of this model were in good agreement with the fluorescence signals and gain and absorption measured experimentally.

Jancaitis, K.S.

1983-11-01T23:59:59.000Z

69

Experimental and theoretical study of the (n,2n) reaction on 174,176Hf isotopes  

Science Journals Connector (OSTI)

Cross sections for the 174Hf(n,2n)173Hf and 176Hf(n,2n)175Hf reactions have been measured on the 5.5-MV Van de Graaff tandem accelerator of National Centre for Scientific Research “Demokritos” in Athens, in the neutron energy region from 8.8 to 11.0 MeV, using the activation technique. An experimental method to account for the contamination of the 176Hf(n,2n) reaction by the 174Hf(n,?) reaction activated by the parasitic neutrons of the beam is presented. Statistical model calculations have also been performed using the nuclear-reaction codes empire-ii and talys. The results and effects of the nuclear input parameters as well as pre-equilibrium emission are discussed in detail.

M. Serris; M. Diakaki; S. Galanopoulos; M. Kokkoris; M. Lamprou; C. T. Papadopoulos; R. Vlastou; P. Demetriou; C. A. Kalfas; A. Lagoyannis

2012-09-07T23:59:59.000Z

70

Crystal phase transition of HfO2 films evaporated by plasma-ion-assisted deposition  

Science Journals Connector (OSTI)

HfO2 is a well-known high-refractive-index material for optical interference coatings from the infrared down to the ultraviolet

Wang, Jue; Maier, Robert L; Schreiber, Horst

2008-01-01T23:59:59.000Z

71

Crystal Phase Transition of HfO2 Films Evaporated by Plasma Ion-Assisted Deposition  

Science Journals Connector (OSTI)

HfO2 films were evaluated by spectroscopic ellipsometry, indicating crystal phase transition due to plasma ion momentum transfer during deposition. The film inhomogeneity,...

Wang, Jue; Maier, Robert L; Schreiber, Horst

72

Anharmonic Three-Phonon Processes in Lithium Fluoride  

Science Journals Connector (OSTI)

The ultrasonic attenuation was measured in lithium fluoride for longitudinal and both transverse waves along the [110] axis at 0.4 and 1.0 Gc/sec from liquid-helium to room temperatures. After subtracting the low-temperature residual attenuation, the anharmonic attenuation of the slow transverse mode was found to vary linearly with frequency and as T3.5 below 30°K. For the fast transverse and the longitudinal modes, the temperature variation is more rapid and not expressible as a single power of temperature. The attenuation of the longitudinal mode showed some dependence on beam intensity. The attenuation of the slow transverse waves at 15°K was found to be somewhat higher than predicted by the Landau-Rumer theory. The strength of three-phonon processes had been deduced by Berman and Brock from the isotope thermal resistance of lithium fluoride. These results refer to phonons of frequencies around 300 Gc/sec. Assuming a linear variation with frequency, the present attenuation values agree to almost within a factor 2 with the values deduced by Berman and Brock at the same temperatures. Velocities of the three modes are given as functions of crystallographic direction.

J. de Klerk and P. G. Klemens

1966-07-15T23:59:59.000Z

73

Proximal renal tubular injury in rats sub-chronically exposed to low fluoride concentrations  

SciTech Connect (OSTI)

Fluoride is usually found in groundwater at a very wide range of concentration between 0.5 and 25 ppm. At present, few studies have assessed the renal effects of fluoride at environmentally relevant concentrations. Furthermore, most of these studies have used insensitive and nonspecific biomarkers of kidney injury. The aim of this study was to use early and sensitive biomarkers to evaluate kidney injury after fluoride exposure to environmentally relevant concentrations. Recently weaned male Wistar rats were exposed to low (15 ppm) and high (50 ppm) fluoride concentrations in drinking water for a period of 40 days. At the end of the exposure period, kidney injury biomarkers were measured in urine and renal mRNA expression levels were assessed by real time RT-PCR. Our results showed that the urinary kidney injury molecule (Kim-1), clusterin (Clu), osteopontin (OPN) and heat shock protein 72 excretion rate significantly increased in the group exposed to the high fluoride concentration. Accordingly, fluoride exposure increased renal Kim-1, Clu and OPN mRNA expression levels. Moreover, there was a significant dose-dependent increase in urinary ?-2-microglobulin and cystatin-C excretion rate. Additionally, a tendency towards a dose dependent increase of tubular damage in the histopathological light microscopy findings confirmed the preferential impact of fluoride on the tubular structure. All of these changes occurred at early stages in which, the renal function was not altered. In conclusion using early and sensitive biomarkers of kidney injury, we were able to found proximal tubular alterations in rats sub-chronically exposed to fluoride. - Highlights: • Exposure to low concentrations of fluoride induced proximal tubular injury • Increase in urinary Kim-1, Clu, OPN and Hsp72 in 50 ppm fluoride-exposed group • Increase in urinary B2M and CysC in 15 and 50 ppm fluoride-exposed groups • Fluoride exposure increased renal Kim, Clu and OPN mRNA expression levels. • Fluoride increased kidney injury biomarkers at stages where eGFR was unaltered.

Cárdenas-González, Mariana C.; Del Razo, Luz M. [Departmento de Toxicología, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), México, D. F., México (Mexico); Barrera-Chimal, Jonatan [Unidad de Fisiología Molecular, Instituto de Investigaciones Biomédicas, Universidad Nacional Autónoma de México and Instituto Nacional de Ciencias Médicas y Nutrición Salvador Zubirán, México, D. F., México (Mexico); Jacobo-Estrada, Tania [Departmento de Toxicología, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), México, D. F., México (Mexico); López-Bayghen, Esther [Departamento de Genética y Biología Molecular, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), México, D. F., México (Mexico); and others

2013-11-01T23:59:59.000Z

74

The mechanism of HF formation in LiPF6 based organic carbonate electrolytes  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The mechanism of HF formation in LiPF6 based organic carbonate electrolytes The mechanism of HF formation in LiPF6 based organic carbonate electrolytes Title The mechanism of HF formation in LiPF6 based organic carbonate electrolytes Publication Type Journal Article Year of Publication 2012 Authors Lux, Simon F., Ivan T. Lucas, Elad Pollak, Stefano Passerini, Martin Winter, and Robert Kostecki Journal Electrochemistry Communications Volume 14 Start Page 47 Issue 1 Pagination 47-50 Date Published 01/2012 Keywords Hydrofluoric acid, LiPF6 degradation, Lithium ion batteries, spectroscopic ellipsometry Abstract Spectroscopic ellipsometry was used to study the time-dependent formation of HF upon the thermal degradation of LiPF6 at 50 °C in a lithium ion battery electrolyte containing ethylene carbonate and diethyl carbonate. The generated HF was monitored by following the etching rate of a 300 nm thick SiO2 layer, grown on both sides of a silicon wafer substrate, as a function of the immersion time in the electrolyte at 50 °C. It was found that the formation of HF starts after 70 h of exposure time and occurs following several different phases. The amount of generated HF was calculated using an empirical formula correlating the etching rate to the temperature. Combining the results of the HF formation with literature data, a simplified mechanism for the formation of the HF involving LiPF6 degradation, and a simplified catalytical reaction pathway of the formed HF and silicon dioxide are proposed to describe the kinetics of HF formation.

75

Finland HF and Esrange MST radar observations of polar mesosphere summer echoes  

E-Print Network [OSTI]

Finland HF and Esrange MST radar observations of polar mesosphere summer echoes Tadahiko Ogawa1 (200x) xx:1­8 Finland HF and Esrange MST radar observations of polar mesosphere summer echoes Tadahiko in Finland are presented. The echoes were detected at four frequencies of 9, 11, 13 and 15 MHz at slant

Kirkwood, Sheila

76

Interfacial and structural properties of sputtered HfO{sub 2} layers  

SciTech Connect (OSTI)

Magnetron sputtered HfO{sub 2} layers formed on a heated Si substrate were studied by spectroscopic ellipsometer (SE), x-ray diffraction (XRD), Fourier transform infrared (FTIR), and x-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiO{sub x} suboxide layer at the HfO{sub 2}/Si interface is unavoidable. The HfO{sub 2} thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O{sub 2}/Ar gas ratio during sputtering, sputtering time, and substrate temperature. XRD spectra show that the deposited film has (111) monoclinic phase of HfO{sub 2}, which is also supported by FTIR spectra. The atomic concentration and chemical environment of Si, Hf, and O have been measured as a function of depth starting from the surface of the sample by XPS technique. It shows that HfO{sub 2} layers of a few nanometers are formed at the top surface. Below this thin layer, Si-Si bonds are detected just before the Si suboxide layer, and then the Si substrate is reached during the depth profiling by XPS. It is clearly understood that the highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO{sub 2} to form HfO{sub 2}, leaving Si-Si bonds behind.

Aygun, G. [Department of Physics, Izmir Institute of Technology, Urla, TR-35430 Izmir (Turkey); Yildiz, I. [Department of Physics, Middle East Technical University, TR-06531 Ankara (Turkey); Central Laboratory, Middle East Technical University, TR-06531 Ankara (Turkey)

2009-07-01T23:59:59.000Z

77

Ca+HF: The anatomy of a chemical insertion reaction R. L. Jaffe  

E-Print Network [OSTI]

Ca+HF: The anatomy of a chemical insertion reaction R. L. Jaffe NASA Ames Research Center, Moffett theoretical investigation of the gas phase reaction Ca + HF-CaF + H is reported. The overall study involves electronic state of the Ca-F-H system, (b) careful fitting of the computed surface to an analytical form

Zare, Richard N.

78

Electronic Structure of Hf@C28 and Its Ions. 1. SCF Calculations  

Science Journals Connector (OSTI)

Electronic Structure of Hf@C28 and Its Ions. 1. SCF Calculations ... Electronic Structures of C28H4 and Hf@C28H4 and Their Ions. ... Electronic structure calculations, including relativistic core potentials and the spin?orbit interaction, have been carried out on the C28, Pa@C28, and U@C28 species. ...

Debbie Fu-Tai Tuan; Russell M. Pitzer

1995-01-01T23:59:59.000Z

79

Polyvinylidene Fluoride-Based Membranes for Direct Methanol Fuel Cell Applications  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Polyvinylidene Fluoride-Based Polyvinylidene Fluoride-Based Membranes for Direct Methanol Fuel Cell Applications Wensheng He, David Mountz, Tao Zhang, Chris Roger July 17, 2012 2 Outline Background on Arkema's polyvinylidene fluoride (PVDF) blend membrane technology Overview of membrane properties and performance Summary 3 Membrane Technology Polymer Blend * Kynar ® PVDF * Chemical and electrochemical stability * Mechanical strength * Excellent barrier against methanol * Polyelectrolyte * H + conduction and water uptake Flexible Blending Process  PVDF can be compatibilized with a number of polyelectrolytes  Process has been scaled to a pilot line Property Control * Morphology: 10-100s nm domains * Composition can be tailored to minimize methanol permeation, while optimizing

80

Crystal structure of Si-doped HfO{sub 2}  

SciTech Connect (OSTI)

Si-doped HfO{sub 2} was prepared by solid state synthesis of the starting oxides. Using Rietveld refinement of high resolution X-ray diffraction patterns, a substitutional limit of Si in HfO{sub 2} was determined as less than 9 at.?%. A second phase was identified as Cristobalite (SiO{sub 2}) rather than HfSiO{sub 4}, the latter of which would be expected from existing SiO{sub 2}-HfO{sub 2} phase diagrams. Crystallographic refinement with increased Si-dopant concentration in monoclinic HfO{sub 2} shows that c/b increases, while ? decreases. The spontaneous strain, which characterizes the ferroelastic distortion of the unit cell, was calculated and shown to decrease with increasing Si substitution.

Zhao, Lili [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); School of Information Science and Technology, Northwest University, Xi'an 710127 (China); Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Nelson, Matthew; Fancher, Chris M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Aldridge, Henry [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Iamsasri, Thanakorn; Forrester, Jennifer S.; Jones, Jacob L., E-mail: jacobjones@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Nishida, Toshikazu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States); Moghaddam, Saeed [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2014-01-21T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Safety Slide 1 Hydrofluoric (HF) Acid Hazards http://www.emsworld.com/web/online/Education/Hydrofluoric-Acid-/5$12949  

E-Print Network [OSTI]

Safety Slide 1 ­ Hydrofluoric (HF) Acid Hazards http://www.emsworld.com/web may be delayed for up to 24 hours, even with dilute solutions. HF burns affect deep tissue layers

Cohen, Robert E.

82

High performance organic field-effect transistors with ultra-thin HfO{sub 2} gate insulator deposited directly onto the organic semiconductor  

SciTech Connect (OSTI)

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

Ono, S., E-mail: shimpei@criepi.denken.or.jp [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Häusermann, R. [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan) [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland); Chiba, D. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan) [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 322-0012 (Japan); Department of Applied Physics, University of Tokyo, Tokyo 113-8656 (Japan); Shimamura, K.; Ono, T. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)] [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Batlogg, B. [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)] [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)

2014-01-06T23:59:59.000Z

83

The system silver fluoride - hydrogen fluoride - water at zero degrees centigrade and at minus fifteen degrees centigrade  

E-Print Network [OSTI]

samples from the acid&ass titraticna vere filtered J ' through veigbed fritted glass filter oruclbles~ snd washed with 1 . V 0. 01 I nitrio aoid and vator. %e oruoiblee vere then dried in aa, oven eot at 140 for fogr bcnua, plaoed in a vaomsa... . . and Coupons, Xeu Tork (1952) ~ 'I g 16 I l \\ 1 I ( v' 4 o Al Figure 1 AHF-HF-HFO At 0 C, Figure 2 AHP-HP-H2G At -15 G. o b0 ID III IS Cw IS ...

Thomas, Hiram Jack

2012-06-07T23:59:59.000Z

84

Fluoride Salt-Cooled High-Temperature Reactor Development Roadmap  

SciTech Connect (OSTI)

Fluoride salt-cooled high-temperature reactors (FHRs) are an emerging reactor class with potentially advantageous performance characteristics and fully passive safety. This paper provides an overview of a technology development pathway for expeditious commercial deployment of first-generation FHRs. The paper describes the principal remaining FHR technology challenges and the development path needed to address the challenges. First-generation FHRs do not appear to require any technology breakthroughs, but will require significant technology development and demonstration. FHRs are currently entering early phase engineering development. As such, the development roadmap is not as technically detailed or specific as would be the case for a more mature reactor class. The higher cost of fuel and coolant; the lack of an approved licensing framework; the lack of qualified, salt-compatible structural materials; and the potential for tritium release into the environment are the most obvious issues that remain to be resolved.

Holcomb, David Eugene [ORNL] [ORNL; Flanagan, George F [ORNL] [ORNL; Mays, Gary T [ORNL] [ORNL; Pointer, William David [ORNL] [ORNL; Robb, Kevin R [ORNL] [ORNL; Yoder Jr, Graydon L [ORNL] [ORNL

2014-01-01T23:59:59.000Z

85

Ytterbium-doped borate fluoride laser crystals and lasers  

DOE Patents [OSTI]

A new class of solid state laser crystals and lasers are formed from Yb-doped borate fluoride host crystals. The general formula for the host crystals is MM{prime}(BO{sub 3})F, where M, M{prime} are monovalent, divalent aria trivalent metal cations. A particular embodiment of the invention is Yb-doped BaCaBO{sub 3}F (Yb:BCBF). BCBF and some of the related derivative crystals are capable of nonlinear frequency conversion, whereby the fundamental of the laser is converted to a longer or shorter wavelength. In this way, these new crystals can simultaneously serve as self-frequency doubling crystals and laser materials within the laser resonator. 6 figs.

Schaffers, K.I.; DeLoach, L.D.; Payne, S.A.; Keszler, D.A.

1997-10-14T23:59:59.000Z

86

Photon avalanche up-conversion in holmium doped fluoride glasses  

SciTech Connect (OSTI)

Photon avalanche green up-conversion emission centered at 545 nm has been observed in Ho{sup 3+} doped and Ho{sup 3+}, Tm{sup 3+} co-doped ZrF{sub 4}-based fluoride glasses when excited near 585 nm which is off resonance with any ground state absorption bands of either Ho{sup 3+} or Tm{sup 3+} ions. Detailed spectral measurements and analysis suggest that the 545 nm emission occurs from the {sup 5}S{sub 2},{sup 5}F{sub 4} states of Ho{sup 3+} that are populated by excited state absorption from the {sup 5}I{sub 7} state of Ho{sup 3+}. Strong cross-relaxation that efficiently populates the {sup 5}I{sub 7} state makes the photon avalanche process possible in this system.

Chen, Y.H.; Liu, G.K.; Beitz, J.V. [Argonne National Lab., IL (United States). Chemistry Division; Jie Wang [Shanghai Institute of Optics and Fine Mechanics, Shanghai (China)

1996-08-01T23:59:59.000Z

87

Electrical properties of MIS capacitor using low temperature electron beam gun--evaporated HfAlO dielectrics  

E-Print Network [OSTI]

Electrical properties of MIS capacitor using low temperature electron beam gun--evaporated Hf of $1.45 nm was achieved in HfAlO films deposited by an electron beam gun evap- orator on unheated p of electron beam gun (EBG) evaporation to deposit high quality HfAlO films close to room temperature

Eisenstein, Gadi

88

Growth and characterization of UHV sputtering HfO2 film by plasma oxidation and low temperature annealing  

Science Journals Connector (OSTI)

Ultra-thin (?4.0 nm) HfO2 films were fabricated by plasma oxidation of sputtered metallic Hf films with post low temperature annealing. Advantage of this fabrication process is that the pre-deposition of Hf metal...

Q. Li; S. J. Wang; W. D. Wang; D. Z. Chi; A. C. H. Huan…

2006-07-01T23:59:59.000Z

89

Detection of Propane by IR-ATR in a Teflon®-Clad Fluoride Glass Optical Fiber  

Science Journals Connector (OSTI)

The detection of propane with the use of ATR spectroscopy at 3.3 ?m, as the gas diffuses through the Teflon® cladding of a fluoride optical fiber, is reported. A...

Ruddy, V; McCabe, S

1990-01-01T23:59:59.000Z

90

Nanofiltration membranes based on polyvinylidene fluoride nanofibrous scaffolds and crosslinked polyethyleneimine networks  

Science Journals Connector (OSTI)

In this article, we describe the synthesis of new and ion-selective nanofiltration (NF) membranes using polyvinylidene fluoride (PVDF) nanofibers and hyperbranched polyethylenimine (PEI) as building blocks. Th...

Seong-Jik Park; Ravi Kumar Cheedrala…

2014-01-01T23:59:59.000Z

91

Method for removal of plutonium impurity from americium oxides and fluorides  

DOE Patents [OSTI]

Method for removal of plutonium impurity from americium oxides and fluorides. AmF/sub 4/ is not further oxidized to AmF/sub 6/ by the application of O/sub 2/F at room temperature thereto, while plutonium compounds present in the americium sample are fluorinated to volatile PuF/sub 6/, which can readily be separated therefrom, leaving the purified americium oxides and/or fluorides as the solid tetrafluoride thereof.

FitzPatrick, J.R.; Dunn, J.G.; Avens, L.R.

1987-02-13T23:59:59.000Z

92

Method for removal of plutonium impurity from americium oxides and fluorides  

DOE Patents [OSTI]

Method for removal of plutonium impurity from americium oxides and fluorides. AmF.sub.4 is not further oxidized to AmF.sub.6 by the application of O.sub.2 F at room temperature, while plutonium compounds present in the americium sample are fluorinated to volatile PuF.sub.6, which can readily be separated therefrom, leaving the purified americium oxides and/or fluorides as the solid tetrafluoride.

FitzPatrick, John R. (Los Alamos, NM); Dunn, Jerry G. (Los Alamos, NM); Avens, Larry R. (Los Alamos, NM)

1987-01-01T23:59:59.000Z

93

Role of oxygen vacancy in HfO{sub 2}/SiO{sub 2}/Si(100) interfaces  

SciTech Connect (OSTI)

We have investigated the interface states in HfO{sub 2}/SiO{sub 2}/Si(100) systems that were prepared by using the in situ pulsed laser deposition technique. X-ray photoelectron spectroscopy data revealed that when the HfO{sub 2} film thickness exceeds 11 A, the film composition undergoes a systematic change from Hf silicate to oxygen-deficient HfO{sub x<2}. Furthermore, we determined that the evolution of the interface states clearly depends on the oxygen condition applied during the film growth and that the oxygen vacancy is an important parameter for Hf silicate formation.

Cho, Deok-Yong; Oh, S.-J.; Chang, Y.J.; Noh, T.W.; Jung, Ranju; Lee, Jae-Cheol [CSCMR and School of Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); ReCOE and School of Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Samsung Advanced Institute of Technology, Suwon 440-900 (Korea, Republic of)

2006-05-08T23:59:59.000Z

94

Uranium hexafluoride liquid thermal expansion, elusive eutectic with hydrogen fluoride, and very first production using chlorine trifluoride  

SciTech Connect (OSTI)

Three unusual incidents and case histories involving uranium hexafluoride in the enrichment facilities of the USA in the late 1940`s and early 1950`s are presented. The history of the measurements of the thermal expansion of liquids containing fluorine atoms within the molecule is reviewed with special emphasis upon uranium hexafluoride. A comparison is made between fluorinated esters, fluorocarbons, and uranium hexafluoride. The quantitative relationship between the thermal expansion coefficient, a, of liquids and the critical temperature, T{sub c} is presented. Uranium hexafluoride has an a that is very high in a temperature range that is used by laboratory and production workers - much higher than any other liquid measured. This physical property of UF{sub 6} has resulted in accidents involving filling the UF{sub 6} containers too full and then heating with a resulting rupture of the container. Such an incident at a uranium gaseous diffusion plant is presented. Production workers seldom {open_quotes}see{close_quotes} uranium hexafluoride. The movement of UF{sub 6} from one container to another is usually trailed by weight, not sight. Even laboratory scientists seldom {open_quotes}see{close_quotes} solid or liquid UF{sub 6} and this can be a problem at times. This inability to {open_quotes}see{close_quotes} the UF{sub 6}-HF mixtures in the 61.2{degrees}C to 101{degrees}C temperature range caused a delay in the understanding of the phase diagram of UF{sub 6}-HF which has a liquid - liquid immiscible region that made the eutectic composition somewhat elusive. Transparent fluorothene tubes solved the problem both for the UF{sub 6}-HF phase diagram as well as the UF{sub 6}-HF-CIF{sub 3} phase diagram with a miscibility gap starting at 53{degrees}C. The historical background leading to the first use of CIF{sub 3} to produce UF{sub 6} in both the laboratory and plant at K-25 is presented.

Rutledge, G.P. [Central Environmental, Inc., Anchorage, AK (United States)

1991-12-31T23:59:59.000Z

95

Towards forming-free resistive switching in oxygen engineered HfO{sub 2?x}  

SciTech Connect (OSTI)

We have investigated the resistive switching behavior in stoichiometric HfO{sub 2} and oxygen-deficient HfO{sub 2?x} thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO{sub 2?x} thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.

Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de; Kurian, J.; Hildebrandt, E.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Strasse 2, 64287 Darmstadt (Germany); Bertaud, T.; Walczyk, C.; Calka, P.; Zaumseil, P.; Sowinska, M.; Walczyk, D. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Gloskovskii, A. [Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

2014-02-10T23:59:59.000Z

96

Low energy N{sub 2} ion bombardment for removal of (HfO{sub 2}){sub x}(SiON){sub 1-x} in dilute HF  

SciTech Connect (OSTI)

The ion assisted wet removal of (HfO{sub 2}){sub x}(SiON){sub 1-x} high dielectric constant (k) materials and its effect on electrical properties were investigated. Crystallization temperature of (HfO{sub 2}){sub x}(SiON){sub 1-x} increased as the percentage of SiON increased. The crystallized (HfO{sub 2}){sub 0.6}(SiON){sub 0.4} was damaged and turned to an amorphous film via incorporation of N species into the film by N{sub 2} plasma treatment. In addition, the structure of (HfO{sub 2}){sub 0.6}(SiON){sub 0.4} was disintegrated into HfO{sub 2}, SiO(N), and ON after N{sub 2} plasma treatment. N{sub 2} plasmas using low bias power were applied for wet removal of high-k films and the mechanism of the ion assisted wet removal process was explored. When high bias power was applied, the surface of source and drain regions was nitrided via the reaction between N and Si substrates. Feasibility of the low bias power assisted wet removal process was demonstrated for short channel high-k metal oxide semiconductor device fabrication by the smaller shift of threshold voltage, compared to the high bias power assisted wet removal process as well as the wet-etching-only process.

Hwang, Wan Sik; Cho, Byung-Jin; Chan, Daniel S. H.; Yoo, Won Jong [Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, E4A 02-04, Engineering Drive 3, 117576 Singapore (Singapore); SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Mechanical Engineering, Sungkyunkwan University 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2007-07-15T23:59:59.000Z

97

Numerical simulation of a Q-switched cw chemical HF laser  

SciTech Connect (OSTI)

A mathematical model of a Q-switched cw chemical laser is developed. The model is based on a simplified description of the active medium and the exact wave description of the mode structure of radiation. The model is used to study numerically the spatial-angular parameters of the output beam of a HF laser. We considered an unstable cavity that provided a high stability of the axis of the laser-pulse radiation pattern upon Q-switching with the help of a rotating mirror. The results of numerical simulation showed that for typical dimensions of a plane or an unstable cavity of the positive branch in a cw chemical laser, the angular radiation divergence rapidly changes in time and on average exceeds the diffraction limit by an order of magnitude. The problem can be solved by replacing a rotating mirror Q switch by a fixed one with time-dependent transmission. We also considered a negative-branch unstable cavity which can provide a stable radiation divergence upon Q-switching produced by a rotating mirror. (lasers)

Kuprenyuk, V I [Institute for Laser Physics, Federal State Unitary Enterprise ' Scientific and Industrial Corporation 'Vavilov State Optical Institute', St. Petersburg (Russian Federation); Maksimov, Yurii P; Mashendzhinov, Viktor I; Rotinyan, Mikhail A; Fedorov, Igor' A [Russian Science Centre 'Applied Chemistry', St Petersburg (Russian Federation); Rodionov, A Yu

2007-03-31T23:59:59.000Z

98

Mixed cation phases in sputter deposited HfO{sub 2}-TiO{sub 2} nanolaminates  

SciTech Connect (OSTI)

Nanolaminate HfO{sub 2}-TiO{sub 2} films are grown by reactive sputter deposition on unheated fused SiO{sub 2}, sequentially annealed at 573 to 973 K, and studied by x-ray diffraction. A nanocrystalline structure of orthorhombic (o) HfTiO{sub 4} adjacent to an interface followed by monoclinic (m) Hf{sub 1-x}Ti{sub x}O{sub 2} is identified. m-Hf{sub 1-x}Ti{sub x}O{sub 2}, a metastable phase, is isomorphous with m-HfO{sub 2} and a high pressure phase, m-HfTiO{sub 4}. A Vegard's law analysis shows that the Ti atomic fraction in m-Hf{sub 1-x}Ti{sub x}O{sub 2} is much greater than Ti equilibrium solubility in m-HfO{sub 2}. A space group-subgroup argument proposes that m-Hf{sub 1-x}Ti{sub x}O{sub 2} arises from an o/m-HfTiO{sub 4} second order phase transition to accommodate the larger Hf atom.

Cisneros-Morales, M. C.; Aita, C. R. [Advanced Coatings Experimental Laboratory, College of Engineering and Applied Science, University of Wisconsin-Milwaukee, P.O. Box 784, Milwaukee, Wisconsin 53201 (United States)

2008-07-14T23:59:59.000Z

99

Suppression of interfacial reaction for HfO{sub 2} on silicon by pre-CF{sub 4} plasma treatment  

SciTech Connect (OSTI)

In this letter, the effects of pre-CF{sub 4} plasma treatment on Si for sputtered HfO{sub 2} gate dielectrics are investigated. The significant fluorine was incorporated at the HfO{sub 2}/Si substrate interface for a sample with the CF{sub 4} plasma pretreatment. The Hf silicide was suppressed and Hf-F bonding was observed for the CF{sub 4} plasma pretreated sample. Compared with the as-deposited sample, the effective oxide thickness was much reduced for the pre-CF{sub 4} plasma treated sample due to the elimination of the interfacial layer between HfO{sub 2} and Si substrate. These improved characteristics of the HfO{sub 2} gate dielectrics can be explained in terms of the fluorine atoms blocking oxygen diffusion through the HfO{sub 2} film into the Si substrate.

Lai, C.S.; Wu, W.C.; Chao, T.S.; Chen, J.H.; Wang, J.C.; Tay, L.-L.; Rowell, Nelson [Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan (China); Department of Electronic Physics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan (China); Nanya Technology Corporation, Hwa-Ya Technology Park, 669 Fu-Hsing 3rd Rd., Kueishan, Taoyuan 338, Taiwan (China); Institute for Microstructural Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, Ontario K1A 0R6 (Canada)

2006-08-14T23:59:59.000Z

100

Determination of Boron in Silicate Samples by Direct Aspiration of Sample HF Solutions into ICPMS  

Science Journals Connector (OSTI)

A rapid and precise technique for the determination of boron content in silicate rocks was developed by employing isotope dilution inductively coupled plasma mass spectrometry with a flow injection system (FI-ID-ICPMS). The sample was decomposed with HF ...

Akio Makishima; Eizo Nakamura; Toshio Nakano

1997-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

E-Print Network 3.0 - al hf ta Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a JEOL electron microprobe and Ca, Ti, Nb, Ta, Hf and Zr abundances measured using laser ablation... for an Al-rich chon- drule. As Figure 1 shows there is little evidence for...

102

Magnetospheric wave injection by modulated HF heating of the auroral electrojet.  

E-Print Network [OSTI]

?? Modulated High Frequency (HF, 3-30 MHz) heating of the auroral electrojet to generate electromagnetic waves in the Extremely Low Frequency (ELF, 3-3000 Hz) and… (more)

Golkowski, Mark

2009-01-01T23:59:59.000Z

103

LuHf isotope systematics of fossil biogenic apatite and their effects on geochronology  

E-Print Network [OSTI]

) and argillaceous matrices with low permeability (oil shale of Messel, Germany; Posidonienschiefer of Holzmaden the Eifel, Germany. Low 176 Lu/177 Hf ratios in all materials from the Middle Eocene Messel oil shale (e

Schöne, Bernd R.

104

Observations of small-scale plasma density depletions in arecibo HF heating experiments  

SciTech Connect (OSTI)

Observations of incoherent scattering of electromagnetic waves at UHF from Langmuir waves by a new scheme involving linear frequency modulation (chirping) of a UHF transmitter and the demodulation (dechirping) of the received signals have been applied during HF heating experiments. These observations show that the high power HF wave used for ionospheric modification creates small-scale plasma depletions instantly on a time scale of 5 ms. For a plasma frequency of 5.1 MHz, plasma frequency gradient of the order of 50 kHz/km, and power density input of the HF heater wave of 8.0 x 10/sup -5/ W/m/sup 2/ the depletion ranged from 3 to 5%. This appears to provide direct evidence that the HF-induced modifications involve Langmuir waves trapped in density cavities. copyrightAmerican Geophysical Union 1987

Isham, B.; Birkmayer, W.; Hagfors, T.; Kofman, W.

1987-05-01T23:59:59.000Z

105

Simulation and detection of tsunami signatures in ocean surface currents measured by HF radar  

Science Journals Connector (OSTI)

High-frequency (HF) surface wave radars provide the unique capability to continuously monitor the coastal environment far beyond the range of conventional microwave radars. Bragg-resonant backscattering by ocean ...

Klaus-Werner Gurgel; Anna Dzvonkovskaya; Thomas Pohlmann; Thomas Schlick…

2011-10-01T23:59:59.000Z

106

In situ characterization of initial growth of HfO{sub 2}  

SciTech Connect (OSTI)

The initial growth of HfO{sub 2} on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO{sub 2} films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO{sub 2} is not completely formed. A continuous usable HfO{sub 2} film with thickness of about 1.2 nm is presented in this work.

Wang, L.; Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong); Xue, K.; Xu, J. B. [Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, New Territories (Hong Kong)

2009-01-19T23:59:59.000Z

107

Germanium diffusion during HfO{sub 2} growth on Ge by molecular beam epitaxy  

SciTech Connect (OSTI)

The authors study the Ge diffusion during HfO{sub 2} growth by molecular beam epitaxy on differently in situ prepared germanium substrates and at different growth temperatures. While HfO{sub 2} layers grown directly on Ge do not show any germanium contamination, oxygen rich interfacial layers such as GeO{sub x} or GeO{sub x}N{sub y} partly dissolve into the HfO{sub 2} layer, giving rise to high Ge contamination (from 1% to 10%). The use of nitridated interfacial layers does not prevent Ge diffusion into the HfO{sub 2} during the growth process because of the high oxygen content present in the nitridated germanium layer.

Ferrari, S.; Spiga, S.; Wiemer, C.; Fanciulli, M.; Dimoulas, A. [Laboratorio MDM-INFM-CNR, Via Olivetti, 2 Agrate Brianza, Milano 20041 (Italy); MBE Laboratory, Institute of Materials Science, DEMOKRITOS National Center for Scientific Research, 153 10 Athens (Greece)

2006-09-18T23:59:59.000Z

108

Wind-speed inversion from HF radar first-order backscatter signal  

Science Journals Connector (OSTI)

Land-based high-frequency (HF) radars have the unique capability of continuously monitoring ocean surface environments at ranges up to 200 km off the coast. They provide reliable data on ocean surface currents an...

Wei Shen; Klaus-Werner Gurgel; George Voulgaris; Thomas Schlick…

2012-01-01T23:59:59.000Z

109

Fluoride enhances transfection activity of carbonate apatite by increasing cytoplasmic stability of plasmid DNA  

SciTech Connect (OSTI)

Highlights: {yields} Cytoplasmic stability of plasmid DNA is enhanced by fluoride incorporation into carbonate apatite carrier. {yields} Fluoridated carbonate apatite promotes a robust increase in transgene expression. {yields} Controlled dissolution of fluoridated carbonate apatite in endosomal acidic environment might buffer the endosomes and prevent degradation of the released DNA. -- Abstract: Intracellular delivery of a functional gene or a nucleic acid sequence to specifically knockdown a harmful gene is a potential approach to precisely treat a critical human disease. The intensive efforts in the last few decades led to the development of a number of viral and non-viral synthetic vectors. However, an ideal delivery tool in terms of the safety and efficacy has yet to be established. Recently, we have developed pH-sensing inorganic nanocrystals of carbonate apatite for efficient and cell-targeted delivery of gene and gene-silencing RNA. Here we show that addition of very low level of fluoride to the particle-forming medium facilitates a robust increase in transgene expression following post-incubation of the particles with HeLa cells. Confocal microscopic observation and Southern blotting prove the cytoplasmic existence of plasmid DNA delivered by likely formed fluoridated carbonate apatite particles while degradation of plasmid DNA presumably by cytoplasmic nucleases was noticed following delivery with apatite particles alone. The beneficial role of fluoride in enhancing carbonate apatite-mediated gene expression might be due to the buffering potential of generated fluoridated apatite in endosomal acidic environment, thereby increasing the half-life of delivered plasmid DNA.

Chowdhury, E.H., E-mail: md.ezharul.hoque@med.monash.edu.my [Jeffrey Cheah School of Medicine and Health Sciences, Monash University Sunway Campus, Jalan Lagoon Selatan, Bandar Sunway, Selangor Darul Ehsan (Malaysia)

2011-06-17T23:59:59.000Z

110

Plasma etching of HfO{sub 2} at elevated temperatures in chlorine-based chemistry  

SciTech Connect (OSTI)

Plasma etching of HfO{sub 2} at an elevated temperature is investigated in chlorine-based plasmas. Thermodynamic studies are performed in order to determine the most appropriate plasma chemistry. The theoretical calculations show that chlorocarbon gas chemistries (such as CCl{sub 4} or Cl{sub 2}-CO) can result in the chemical etching of HfO{sub 2} in the 425-625 K temperature range by forming volatile effluents such as HfCl{sub 4} and CO{sub 2}. The etching of HfO{sub 2} is first studied on blanket wafers in a high density Cl{sub 2}-CO plasma under low ion energy bombardment conditions (no bias power). Etch rates are presented and discussed with respect to the plasma parameters. The evolution of the etch rate as function of temperature follows an Arrhenius law indicating that the etching comes from chemical reactions. The etch rate of HfO{sub 2} is about 110 A /min at a temperature of 525 K with a selectivity towards SiO{sub 2} of 15. x-ray photoelectron spectroscopy analyses (XPS) reveal that neither carbon nor chlorine is detected on the HfO{sub 2} surface, whereas a chlorine-rich carbon layer is formed on top of the SiO{sub 2} surface leading to the selectivity between HfO{sub 2} and SiO{sub 2}. A drift of the HfO{sub 2} etch process is observed according to the chamber walls conditioning due to chlorine-rich carbon coatings formed on the chamber walls in a Cl{sub 2}-CO plasma. To get a very reproducible HfO{sub 2} etch process, the best conditioning strategy consists in cleaning the chamber walls with an O{sub 2} plasma between each wafer. The etching of HfO{sub 2} is also performed on patterned wafers using a conventional polysilicon gate. The first result show a slight HfO{sub 2} foot at the bottom of the gate and the presence of hafnium oxide-based residues in the active areas.

Helot, M.; Chevolleau, T.; Vallier, L.; Joubert, O.; Blanquet, E.; Pisch, A.; Mangiagalli, P.; Lill, T. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Laboratoire des Technologies de la Microelectronique, CNRS, 17 rue des martyrs (CEA-LETI), 38054 Grenoble Cedex 09 (France); LTPCM/INPG-CNRS-UJF, 1130 rue de la piscine, 38402 Saint-Martin-d'Heres (France); Applied Materials, 974 E. Arques Ave. M/S 81334, Sunnyvale, California 94086 (United States)

2006-01-15T23:59:59.000Z

111

Chemical states and electronic structure of a HfO(-2) / Ge(001) interface  

SciTech Connect (OSTI)

We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.

Seo, Kang-ill; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; /SLAC, SSRL; Saraswat, Krishna C.; /Stanford U., Elect.

2005-05-04T23:59:59.000Z

112

HfO{sub x}N{sub y} gate dielectric on p-GaAs  

SciTech Connect (OSTI)

Plasma nitridation method is used for nitrogen incorporation in HfO{sub 2} based gate dielectrics for future GaAs-based devices. The nitrided HfO{sub 2} (HfO{sub x}N{sub y}) films on p-GaAs improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, hysteresis, and leakage current. An equivalent oxide thickness of 3.6 nm and a leakage current density of 10{sup -6} A cm{sup -2} have been achieved at V{sub FB}-1 V for nitrided HfO{sub 2} films. A nitride interfacial layer (GaAsO:N) was observed at HfO{sub 2}-GaAs interface, which can reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion led to a substantial enhancement in the overall dielectric properties of the HfO{sub 2} film.

Dalapati, G. K.; Sridhara, A.; Wong, A. S. W.; Chia, C. K.; Chi, D. Z. [Institute of Materials Research and Engineering, A-STAR - Agency for Science, Technology and Research, 3 Research Link, Singapore 117602 (Singapore)

2009-02-16T23:59:59.000Z

113

Chemistry control and corrosion mitigation of heat transfer salts for the fluoride salt reactor (FHR)  

SciTech Connect (OSTI)

The Molten Salt Reactor Experiment (MSRE) was a prototype nuclear reactor which operated from 1965 to 1969 at Oak Ridge National Laboratory. The MSRE used liquid fluoride salts as a heat transfer fluid and solvent for fluoride based {sup 235}U and {sup 233}U fuel. Extensive research was performed in order to optimize the removal of oxide and metal impurities from the reactor's heat transfer salt, 2LiF-BeF{sub 2} (FLiBe). This was done by sparging a mixture of anhydrous hydrofluoric acid and hydrogen gas through the FLiBe at elevated temperatures. The hydrofluoric acid reacted with oxides and hydroxides, fluorinating them while simultaneously releasing water vapor. Metal impurities such as iron and chromium were reduced by hydrogen gas and filtered out of the salt. By removing these impurities, the corrosion of reactor components was minimized. The Univ. of Wisconsin - Madison is currently researching a new chemical purification process for fluoride salts that make use of a less dangerous cleaning gas, nitrogen trifluoride. Nitrogen trifluoride has been predicted as a superior fluorinating agent for fluoride salts. These purified salts will subsequently be used for static and loop corrosion tests on a variety of reactor materials to ensure materials compatibility for the new FHR designs. Demonstration of chemistry control methodologies along with potential reduction in corrosion is essential for the use of a fluoride salts in a next generator nuclear reactor system. (authors)

Kelleher, B. C.; Sellers, S. R.; Anderson, M. H.; Sridharan, K.; Scheele, R. D. [Dept. of Engineering Physics, Univ.of Wisconsin - Madison, 1500 Engineering Drive, Madison, WI 53706 (United States)

2012-07-01T23:59:59.000Z

114

Hydrothermal synthesis and formation mechanism of hexagonal yttrium hydroxide fluoride nanobundles  

SciTech Connect (OSTI)

Graphical abstract: The formation of yttrium hydroxide fluorides nanobundles can be expressed as a precipitation transformation from cubic NaYF{sub 4} to hexagonal NaYF{sub 4} and to hexagonal Y(OH){sub 2.02}F{sub 0.98} owing to ion exchange. - Highlights: • Novel Y(OH){sub 2.02}F{sub 0.98} nanobundles have been successfully prepared by hydrothermal method. • The branched nanobundles composed of numerous oriented-attached nanoparticles has been studied. • The growth mechanism is proposed to be ion exchange and precipitation transformation. - Abstract: This article presents the fabrication of hexagonal yttrium hydroxide fluoride nanobundles via one-pot hydrothermal process, using yttrium nitrate, sodium hydroxide and ammonia fluoride as raw materials to react in propanetriol solvent. The X-ray diffraction pattern clearly reveals that the grown product is pure yttrium hydroxide fluoride, namely Y(OH){sub 2.02}F{sub 0.98}. The morphology and microstructure of the synthesized product is testified to be nanobundles composed of numerous oriented-attached nanoparticles as observed from the field emission scanning electron microscopy (FESEM). The chemical composition was analyzed by the energy dispersive spectrum (EDS), confirming the phase transformation of the products which was clearly consistent with the result of XRD analysis. It is proposed that the growth of yttrium hydroxide fluoride nanobundles be attributed to ion exchange and precipitation transformation.

Tian, Li, E-mail: tianli_cl@163.com [Department of Material Science and Engineering, School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201 (China); State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Sun, QiLiang; Zhao, RuiNi; He, HuiLin; Xue, JianRong [Department of Material Science and Engineering, School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201 (China); Lin, Jun [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

2013-11-15T23:59:59.000Z

115

Method for producing Nb/sub 3/Sn superconductor  

SciTech Connect (OSTI)

A method for producing Nb/sub 3/Sn superconductors is described which comsists of forming a composite consisting of a core portion and a sheath portion surrounding the core portion, said sheath portion being composed of a Cu-Sn alloy, and the core portion being composed of a Nb metal; elongating the composite; and heat-treating the resulting elongated composite to form an Nb/sub 3/Sn layer between the sheath and core portions; the improvement wherein the Cu-Sn alloy contains 1 to 20 atomic percent of Sn and the Nb metal is an Nb alloy containing 0.1 to 30 atomic percent of Hf.

Sekine, H.; Tachikawa, K.

1980-09-23T23:59:59.000Z

116

First-principles phase diagram calculations for the HfCTiC, ZrCTiC, and HfCZrC solid O. Adjaoud,1,*,  

E-Print Network [OSTI]

Transition metal carbides, including the NaCl-structured group IV Ti, Zr, and Hf carbides, have extremely of oxidizing agents, and retain good corrosion resistance to high temperature.1,5,6 The transition-metal high melting points and are therefore referred to collectively as the "refractory carbides

Steinle-Neumann, Gerd

117

Mechanical Properties of Aluminum Fluoride Glass Fibers James Colaizzi, M. John Matthewson, Tariq Iqbal, and Mahmoud R. Shahriari  

E-Print Network [OSTI]

#12;Mechanical Properties of Aluminum Fluoride Glass Fibers James Colaizzi, M. John Matthewson solutions of various pH values on the mechanical properties of polymer coated optical fibers of an aluminum to failure of the fiber. In static fatigue, the time to failure of the aluminum fluoride-based fibers

Matthewson, M. John

118

Quaternised biomass as anion exchanger for the removal of fluoride from water  

Science Journals Connector (OSTI)

Dried Chinese Reed, a fast growing plant, was used as a model biomass for the development of anion exchangers using a quaternisation agent, N-(3-chloro-2-hydroxypropyl) trimethylammonium chloride (CHMAC), for the removal of fluoride from water. Parameters investigated in the adsorption studies include F? concentration, agitation time, adsorbent dose and pH. Equilibrium adsorption data followed both Langmuir and Freundlich isotherms. Presence of chloride, nitrate and sulfate decreased the adsorption significantly. Quaternised Hanf sativa and coconut coir pith (solid waste from coconut coir fibre industry) were also tested for the removal of fluoride with and without cross linking.

C. Namasivayam; W.H. Hoell

2008-01-01T23:59:59.000Z

119

Thermally-driven H interaction with HfO{sub 2} films deposited on Ge(100) and Si(100)  

SciTech Connect (OSTI)

In the present work, we investigated the thermally-driven H incorporation in HfO{sub 2} films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO{sub 2}/substrate interface region (at 300?°C) and through the whole HfO{sub 2} layer (400–600?°C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO{sub 2} films underwent structural changes during annealings, influencing D incorporation. The semiconductor substrate plays a key role in this process.

Soares, G. V., E-mail: gabriel.soares@ufrgs.br; Feijó, T. O. [Instituto de Física, UFRGS, Porto Alegre 91509-900 (Brazil); Baumvol, I. J. R. [Instituto de Física, UFRGS, Porto Alegre 91509-900 (Brazil); Universidade de Caxias do Sul, Caxias do Sul 95070-560 (Brazil); Aguzzoli, C. [Universidade de Caxias do Sul, Caxias do Sul 95070-560 (Brazil); Krug, C. [Instituto de Física, UFRGS, Porto Alegre 91509-900 (Brazil); CEITEC S.A., Porto Alegre 91550-000 (Brazil); Radtke, C. [Instituto de Química, UFRGS, Porto Alegre 91509-900 (Brazil)

2014-01-27T23:59:59.000Z

120

Spectroscopic analysis of Al and N diffusion in HfO{sub 2}  

SciTech Connect (OSTI)

X-ray photoelectron core level spectroscopy, secondary ion mass spectroscopy, spectroscopic ellipsometry, and extended x-ray absorption fine structure measurements have been employed to distinguish the effects of Al and N diffusion on the local bonding and microstructure of HfO{sub 2} and its interface with the Si substrate in (001)Si/SiO{sub x}/2 nm HfO{sub 2}/1 nm AlO{sub x} film structures. The diffusion of Al from the thin AlO{sub x} cap layer deposited on both annealed and unannealed HfO{sub 2} has been observed following anneal in N{sub 2} and NH{sub 3} ambient. Both N{sub 2} and NH{sub 3} subsequent anneals were performed to decouple incorporated nitrogen from thermal reactions alone. Causal variations in the HfO{sub 2} microstructure combined with the dependence of Al and N diffusion on initial HfO{sub 2} conditions are presented with respect to anneal temperature and ambient.

Lysaght, P. S.; Price, J.; Kirsch, P. D. [SEMATECH, 257 Fuller Rd, Albany, New York 12203 (United States); Woicik, J. C.; Weiland, C. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Sahiner, M. A. [Seton Hall University, 400 South Orange Ave, South Orange, New Jersey 07079 (United States)

2012-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique  

SciTech Connect (OSTI)

Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si without HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

2014-03-24T23:59:59.000Z

122

Electronic structure of HfN0.93(100) studied by angle-resolved photoemission  

Science Journals Connector (OSTI)

An experimental and theoretical study of the electronic structure of HfN is reported. Results from angle-resolved photoemission experiments on HfN0.93(100) are presented and interpreted with use of calculated results. The bulk-band structure of stoichiometric HfN was calculated relativistically and nonrelativistically using the linear augmented-plane-wave method. Predicted band locations and dispersions along the ?–X direction are compared with experimental results. In general the experiment indicates smaller bandwidths and locates the bands deeper below the Fermi level than the calculated values. Calculations of photoemission spectra, made nonrelativistically, are also reported and these spectra are found to reflect the recorded spectra fairly well.

J. Lindström; L. I. Johansson; P. E. S. Persson; A. Callens; D. S. L. Law; A. N. Christensen

1989-02-15T23:59:59.000Z

123

On the K{sup {pi}} = 0{sup +} rotational bands in the {sup 178}Hf nucleus  

SciTech Connect (OSTI)

The results obtained by studying the angular distributions of gamma rays with respect to the neutron-beam axis in the reaction {sup 178}Hf(n, n'{gamma}) involving the deexcitation of the K{sup {pi}} = 0{sup +} rotational bands of {sup 178}Hf are presented.New information about themultipole-mixing parameter {delta} in gamma transitions from the levels of these bands is obtained. The K{sup {pi}} = 0{sub 4}{sup +} band is constructed anew. The relationship between the parameter {delta} for the (2{sup +}0{sub n}-2{sup +}0{sub 1}) gamma transition and the energy gap {Delta}{sub n} = E{sub lev}(2{sup +}0{sub n}) - E{sub lev}(0{sup +}0{sub n}), on one hand, and the quasiparticle structure of the rotational band, on the other hand, is discussed for {sup 178}Hf on the basis of the quasiparticle-phonon model.

Govor, L. I.; Demidov, A. M.; Kurkin, V. A., E-mail: kurkin@polyn.kiae.su; Mikhailov, I. V. [Russian Research Centre Kurchatov Institute (Russian Federation)

2010-07-15T23:59:59.000Z

124

Band offsets in HfO{sub 2}/InGaZnO{sub 4} heterojunctions  

SciTech Connect (OSTI)

The valence band discontinuity ({Delta}E{sub V}) of sputter deposited HfO{sub 2}/InZnGaO{sub 4} (IGZO) heterostructures was obtained from x-ray photoelectron spectroscopy measurements. The HfO{sub 2} exhibited a bandgap of 6.07 eV from absorption measurements. A value of {Delta}E{sub V} = 0.48 {+-} 0.025 eV was obtained by using the Ga 2p{sub 3/2}, Zn 2p{sub 3/2}, and In 3d{sub 5/2} energy levels as references. This implies a conduction band offset {Delta}E{sub C} of 2.39 eV in HfO{sub 2}/InGaZnO{sub 4} heterostructures and a nested interface band alignment.

Cho, Hyun [Department of Nanomechatronics Engineering, Pusan National University, Gyeongnam 627-706 (Korea, Republic of); Douglas, E. A.; Gila, B. P.; Craciun, V.; Lambers, E. S.; Pearton, S. J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Ren Fan [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2012-01-02T23:59:59.000Z

125

Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy  

SciTech Connect (OSTI)

The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

Miotti, Leonardo; Bastos, Karen P.; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis [Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States); Instituto de Quimica, Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre (Brazil); Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

2010-07-15T23:59:59.000Z

126

NMR SPECTROSCOPY OF NATURALLY OCCURRING SURFACE-ADSORBED FLUORIDE ON GEORGIA KAOLINITE  

Science Journals Connector (OSTI)

...high concentration, large fluoride concentrations...measured surface area of the 2 mum fraction...reaction vessel and N2 atmosphere to exclude CO2...direct-coupled plasma atomic emission spectrometry...BET-measured surface area of the particles...operating at 470.18 MHz for 19F and 130...

Stacey G. Cochiara; Brian L. Phillips

127

Radiolytic Effects on Fluoride Impurities in a U{sub 3}O{sub 8} Matrix  

SciTech Connect (OSTI)

The safe handling and storage of radioactive materials require an understanding of the effects of radiolysis on those materials. Radiolysis may result in the production of gases (e.g., corrosives) or pressures that are deleterious to storage containers. A study has been performed to address these concerns as they relate to the radiolysis of residual fluoride compounds in uranium oxides.

Icenhour, A.S.

2000-05-01T23:59:59.000Z

128

Nuclear spin relaxation in a vinylidene fluoride and trifluoroethylene copolymer (70/30).  

E-Print Network [OSTI]

583 Nuclear spin relaxation in a vinylidene fluoride and trifluoroethylene copolymer (70/30). II de la dispersion « unidimension- nelle » caractéristique en 03C9-1/2 de (T1)-1 et de (T103C1)-1; un orientations dans les chaînes. Abstract. 2014 Measurements of the hydrogen and fluorine nuclear spin

Boyer, Edmond

129

Dielectric Properties of Relaxor-like Vinylidene Fluoride-Trifluoroethylene-Based Electroactive Polymers  

E-Print Network [OSTI]

(VDF-TrFE) copolymer, and poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF- TrFE-CFE and P(VDF-TrFE-CFE) terpolymer show a significantly different dielectric response: a broad frequency confirmation that giant electrostrictive response of the electron-irradiated P(VDF-TrFE) copolymer and P(VDF-TrFE-CFE

Bobnar, Vid

130

Compatibilizing Poly(vinylidene fluoride)/Nylon-6 Blends with Nanoclay  

Science Journals Connector (OSTI)

Blends of poly(vinylidene fluoride)/nylon-6 (PVDF/N6) 30:70 were melt compounded with various organoclays directly or sequentially. The morphology, thermal, and mechanical properties of the blend nanocomposites were investigated. It was determined that ...

Loan T. Vo; Emmanuel P. Giannelis

2007-10-04T23:59:59.000Z

131

Optical spectroscopic study of the SiN/HfO{sub 2} interfacial formation during rf sputtering of HfO{sub 2}  

SciTech Connect (OSTI)

High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO{sub 2} in either O{sub 2} or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO{sub 2} growth while sputtering. The formation of Si-O bonds after the sputtering of the HfO{sub 2} film in O{sub 2} atmosphere was observed by infrared spectroscopy. Optical diagnosis of the plasma demonstrated a high density of O radicals in the system when working with O{sub 2}. The small radius and high reactivity of these O radicals are the source of the SiN oxidation. However, the structure of the SiN film is preserved during Ar sputtering.

Toledano-Luque, M.; Lucia, M. L.; Prado, A. del; San Andres, E.; Martil, I.; Gonzalez-Diaz, G. [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, Ciudad Universitaria, E-28040 Madrid (Spain)

2007-11-05T23:59:59.000Z

132

Two-step behavior of initial oxidation at HfO{sub 2}/Si interface  

SciTech Connect (OSTI)

In situ x-ray photoelectron spectroscopy revealed that initial Si oxidation at the HfO{sub 2}/Si(001) interface in O{sub 2} proceeds in a two-step manner with an initial slow stage followed by a fast one. This transition in the oxidation process is most likely caused by crystallization of the HfO{sub 2} film. The first stage at 400-600 deg. C exhibited postdeposition annealing conditions suitable for suppressing the interfacial Si oxide in a monolayer region.

Miyata, Noriyuki [MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562 (Japan)

2006-09-04T23:59:59.000Z

133

An Experimental Test Facility to Support Development of the Fluoride Salt Cooled High Temperature Reactor  

SciTech Connect (OSTI)

The need for high-temperature (greater than 600 C) energy exchange and delivery systems is significantly increasing as the world strives to improve energy efficiency and develop alternatives to petroleum-based fuels. Liquid fluoride salts are one of the few energy transport fluids that have the capability of operating at high temperatures in combination with low system pressures. The Fluoride Salt-Cooled High-Temperature Reactor design uses fluoride salt to remove core heat and interface with a power conversion system. Although a significant amount of experimentation has been performed with these salts, specific aspects of this reactor concept will require experimental confirmation during the development process. The experimental facility described here has been constructed to support the development of the Fluoride Salt Cooled High Temperature Reactor concept. The facility is capable of operating at up to 700 C and incorporates a centrifugal pump to circulate FLiNaK salt through a removable test section. A unique inductive heating technique is used to apply heat to the test section, allowing heat transfer testing to be performed. An air-cooled heat exchanger removes added heat. Supporting loop infrastructure includes a pressure control system; trace heating system; and a complement of instrumentation to measure salt flow, temperatures, and pressures around the loop. The initial experiment is aimed at measuring fluoride salt heat transfer inside a heated pebble bed similar to that used for the core of the pebble bed advanced high-temperature reactor. This document describes the details of the loop design, auxiliary systems used to support the facility, the inductive heating system, and facility capabilities.

Yoder Jr, Graydon L [ORNL] [ORNL; Aaron, Adam M [ORNL] [ORNL; Cunningham, Richard Burns [University of Tennessee, Knoxville (UTK)] [University of Tennessee, Knoxville (UTK); Fugate, David L [ORNL] [ORNL; Holcomb, David Eugene [ORNL] [ORNL; Kisner, Roger A [ORNL] [ORNL; Peretz, Fred J [ORNL] [ORNL; Robb, Kevin R [ORNL] [ORNL; Wilgen, John B [ORNL] [ORNL; Wilson, Dane F [ORNL] [ORNL

2014-01-01T23:59:59.000Z

134

High-power ELF radiation generated by modulated HF heating of the ionosphere can cause Earthquakes, Cyclones and localized heating  

E-Print Network [OSTI]

High-power ELF radiation generated by modulated HF heating of the ionosphere can cause Earthquakes, the HAARP heater is the most powerful ionospheric heater, with 3.6GW of effective power using HF heating, Cyclones and localized heating Fran De Aquino Maranhao State University, Physics Department, S

Paris-Sud XI, Université de

135

Photoemission study of energy-band alignment for RuO{sub x}/HfO{sub 2}/Si system  

SciTech Connect (OSTI)

Conductive oxides RuO{sub x} as alternative electrode on high-{kappa} HfO{sub 2} gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuO{sub x}/HfO{sub 2}/Si system and the oxidation-state dependence of barrier height for RuO{sub x} contacting to HfO{sub 2} dielectrics has been analyzed by x-ray photoemission spectroscopy. The valence- and conduction-band offsets of HfO{sub 2}/Si are determined to be 3.05{+-}0.1 and 1.48{+-}0.1 eV, respectively. The barrier heights for the RuO{sub x} contacting to HfO{sub 2} are oxidation-state dependent, in the range of 1.95-2.73 eV.

Li, Q.; Wang, S.J.; Li, K.B.; Huan, A.C.H.; Chai, J.W.; Pan, J.S.; Ong, C.K. [Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore and Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Physics, National University of Singapore, Singapore 117542 (Singapore)

2004-12-20T23:59:59.000Z

136

Low-temperature method for enhancing sputter-deposited HfO{sub 2} films with complete oxidization  

SciTech Connect (OSTI)

A low-temperature method, supercritical CO{sub 2} fluid (SCF) technology, is proposed to improve the dielectric properties of ultrathin hafnium oxide (HfO{sub 2}) film at 150 deg. C without significant formation of parasitic oxide at the interface between HfO{sub 2} and Si substrate. In this research, the HfO{sub 2} films were deposited by dc sputter at room temperature and post-treated by SCF which is mixed with 5 vol % propyl alcohol and 5 vol % H{sub 2}O. From high-resolution transmission electron microscopy image, the interfacial oxide of SCF-treated HfO{sub 2} film is only 5 A ring thick. Additionally, the enhancements in the qualities of sputter-deposited HfO{sub 2} film after SCF process are exhibited by x-ray photoelectron spectroscopy and capacitance-voltage (C-V) measurement.

Tsai, C.-T.; Chang, T.-C.; Liu, P.-T.; Yang, P.-Y.; Kuo, Y.-C.; Kin, K.-T.; Chang, P.-L.; Huang, F.-S. [Institute of Electronics Engineering, National Tsing Hua University, HsinChu 300, Taiwan (China); Department of Physics and Institute of Electro-Optical Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70 Lien-Hai Road, Kaohsiung 804, Taiwan (China); Department of Photonics and Display Institute, National Chiao Tung University, 1001 Ta-Hsueh Rd., HsinChu 300, Taiwan (China); Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 300, Taiwan (China); Institute of Electronics Engineering, National Tsing Hua University, HsinChu 300, Taiwan (China)

2007-07-02T23:59:59.000Z

137

MicroPlanet Technology Corp formerly HF Capital Corp | Open Energy  

Open Energy Info (EERE)

Technology Corp formerly HF Capital Corp Technology Corp formerly HF Capital Corp Jump to: navigation, search Name MicroPlanet Technology Corp (formerly HF Capital Corp) Place Seattle, Washington Zip 98104 Sector Efficiency Product MicroPlanet develops energy-efficiency products for homes and small businesses. Specifically they focus on custom voltage regulators that result in energy savings. On May 6, 2005, the company reverse-listed into Toronto Venture Exchange quoted HF Capital. Coordinates 47.60356°, -122.329439° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":47.60356,"lon":-122.329439,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

138

High-spin excitations in 158,159,160 Hf from recoil-decay tagging  

E-Print Network [OSTI]

Argonne National Laboratory, Argonne, Illinois 60439 3 Nuclear Science Division, Lawrence Berkeley coupled to the Fragment Mass Analyzer at Argonne National Laboratory. Level structures of 158 Hf and 159 technique at Argonne National Laboratory. These reactions have a large number of particle

139

ELF/VLF PHASED ARRAY GENERATION VIA FREQUENCY-MATCHED STEERING OF A CONTINUOUS HF  

E-Print Network [OSTI]

;Abstract The radio spectrum between 300 Hz and 10 kHz (ELF/VLF) has broad applications to global (HF, 3-10 MHz) heating of the lower ionosphere (60-100 km altitude), which changes the atmospheric plasma conductivity. In the presence of natural currents such as the auroral electrojet, ON

140

Scanning tunneling microscopy study of nitrogen incorporated HfO{sub 2}  

SciTech Connect (OSTI)

The impact of nitrogen incorporation on the physical and electrical characteristics of the HfO{sub 2} is examined. X-ray photoelectron spectroscopy shows that nitrogen can be incorporated into the HfO{sub 2} via a two-step thermal anneal--first in ultrahigh vacuum (UHV) and subsequently in N{sub 2}. Following the N{sub 2} anneal, scanning tunneling microscopy in UHV reveals a marked reduction in the low-voltage leakage current under gate injection biasing. From band theory and existing first-principles simulation results, one may consistently attribute this improvement to the passivation of oxygen vacancies in the HfO{sub 2} by nitrogen. Improvement in the breakdown strength of the HfO{sub 2} subjected to ramp-voltage stress (substrate injection) is also observed after the N{sub 2} anneal. The local current-voltage curves acquired concurrently during the ramp-voltage stress exhibit 'space-charge limited conduction', which implies that the observed improvement in breakdown strength may be related to a limitation of the current flow through the gate stack in the high stress voltage regime.

Ong, Y. C.; Ang, D. S.; Pey, K. L.; Li, X. [Nanyang Technological University, School of Electrical and Electronic Engineering, Nanyang Avenue, Singapore 639798 (Singapore); O'Shea, S. J.; Wang, S. J. [Institute of Materials Research and Engineering, A-STAR - Agency for Science, Technology and Research, 3 Research Link, Singapore 11760 (Singapore); Tung, C. H. [Institute of Microelectronics, A-STAR - Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore)

2008-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks  

SciTech Connect (OSTI)

The properties of high-{kappa} metal oxide gate stacks are often determined in the final processing steps following dielectric deposition. We report here results from medium energy ion scattering and x-ray photoelectron spectroscopy studies of oxygen and silicon diffusion and interfacial layer reactions in multilayer gate stacks. Our results show that Ti metallization of HfO{sub 2}/SiO{sub 2}/Si stacks reduces the SiO{sub 2} interlayer and (to a more limited extent) the HfO{sub 2} layer. We find that Si atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for Ti-Si interdiffusion through the high-{kappa} film in the presence of a Ti gate in the crystalline HfO{sub 2} films is also reported. This diffusion is likely to be related to defects in crystalline HfO{sub 2} films, such as grain boundaries. High-resolution transmission electron microscopy and corresponding electron energy loss spectroscopy scans show aggressive Ti-Si intermixing and oxygen diffusion to the outermost Ti layer, given high enough annealing temperature. Thermodynamic calculations show that the driving forces exist for some of the observed diffusion processes.

Goncharova, L. V.; Dalponte, M.; Gustafsson, T.; Celik, O.; Garfunkel, E.; Lysaght, P. S.; Bersuker, G. [Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, 136 Frelinghuysen Rd., Piscataway, New Jersey 08854 (United States); Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, 610 Taylor Rd., Piscataway, New Jersey 08854 (United States); SEMATECH, 2705 Montopolis Dr., Austin, Texas 78741 (United States)

2007-03-15T23:59:59.000Z

142

ACCEPTED MANUSCRIPT The behaviour of Rare-Earth Elements, Zr and Hf during biologically-mediated  

E-Print Network [OSTI]

ACCEPTED MANUSCRIPT ACCEPTED MANUSCRIPT 1 The behaviour of Rare-Earth Elements, Zr and Hf during.a,b* , Cangemi M.a , Brusca L.c , Madonia P.c , Saiano F.d , Zuddas P.e a) Department of Earth and Marine at the solid-liquid interface influencing the distribution of trace elements onto microbial surfaces. Since

143

Investigation of HF plasma turbulence excitation and dissipation in the vicinity of 5th  

E-Print Network [OSTI]

of stimulated electromagnetic emission (SEE) of the ionosphere pumped by powerful HF radio waves are presented, Uppsala Division, SE-751 21 Uppsala, Sweden Experimental results on development and relaxation times after PW turn off d 0.7­1.0 ms are 2­4 times faster than collisional ones for the Langmuir waves

144

Oxygen diffusion and reactions in Hf-based dielectrics L. V. Goncharova,a  

E-Print Network [OSTI]

Oxygen diffusion and reactions in Hf-based dielectrics L. V. Goncharova,a M. Dalponte, D. G Oxygen transport in and reactions with thin hafnium oxide and hafnium silicate films have been. The exchange rate is faster for pure hafnium oxides than for silicates. The amount of exchanged oxygen

Gustafsson, Torgny

145

A study of high-energy proton induced damage in Cerium Fluoride in comparison with measurements in Lead Tungstate calorimeter crystals  

E-Print Network [OSTI]

A Cerium Fluoride crystal produced during early R&D studies for calorimetry at the CERN Large Hadron Collider was exposed to a 24 GeV/c proton fluence Phi_p=(2.78 +- 0.20) x 10EE13 cm-2 and, after one year of measurements tracking its recovery, to a fluence Phi_p=(2.12 +- 0.15) x 10EE14 cm-2. Results on proton-induced damage to the crystal and its spontaneous recovery after both irradiations are presented here, along with some new, complementary data on proton-damage in Lead Tungstate. A comparison with FLUKA Monte Carlo simulation results is performed and a qualitative understanding of high-energy damage mechanism is attempted.

G. Dissertori; P. Lecomte; D. Luckey; F. Nessi-Tedaldi; Th. Otto; F. Pauss; S. Roesler; Ch. Urscheler

2010-05-06T23:59:59.000Z

146

Control of silicidation in HfO2/Si,,100... interfaces Deok-Yong Cho, Kee-Shik Park, B.-H. Choi,a  

E-Print Network [OSTI]

like nitrogen.6,7 Among these, Hf-silicide is probably most detrimental since it is metallic and degrades the capacitor performance. Metal- lic Hf-silicide formation has been reported in the interfaceControl of silicidation in HfO2/Si,,100... interfaces Deok-Yong Cho, Kee-Shik Park, B.-H. Choi

Oh, Se-Jung

147

Preventing fuel failure for a beyond design basis accident in a fluoride salt cooled high temperature reactor  

E-Print Network [OSTI]

The fluoride salt-cooled high-temperature reactor (FHR) combines high-temperature coated-particle fuel with a high-temperature salt coolant for a reactor with unique market and safety characteristics. This combination can ...

Minck, Matthew J. (Matthew Joseph)

2013-01-01T23:59:59.000Z

148

Effect of Acidulated Phosphate Fluoride Gel on the Prevention of White Spot Lesions in Patients Undergoing Active Orthodontic Treatment  

E-Print Network [OSTI]

Introduction: The purpose of this study was to evaluate the effect of 1.23% acidulated phosphate fluoride (APF) gel on white spot lesion (WSL) formation utilizing a typical orthodontic treatment interval for the applications. Methods...

Hutto Fretty, Corneil Kimberly

2014-05-06T23:59:59.000Z

149

Poly(vinylidene fluoride-co-hexafluoropropylene)/poly(methylmethacrylate)/nanoclay composite gel polymer electrolyte for lithium/sulfur batteries  

Science Journals Connector (OSTI)

Herein, we describe the preparation of a gel polymer consisting of a solution of lithium salt in alkyl carbonate mixture solvent dispersed in a matrix of poly(vinylidene fluoride-co-hexafluoropropylene)/poly(meth...

Yongguang Zhang; Yan Zhao; Zhumabay Bakenov…

2014-04-01T23:59:59.000Z

150

Tritium production analysis and management strategies for a Fluoride-salt-cooled high-temperature test reactor (FHTR)  

E-Print Network [OSTI]

The Fluoride-salt-cooled High-temperature Test Reactor (FHTR) is a test reactor concept that aims to demonstrate the neutronics, thermal-hydraulics, materials, tritium management, and to address other reactor operational ...

Rodriguez, Judy N

2013-01-01T23:59:59.000Z

151

APPLICATION OF VACUUM SALT DISTILLATION TECHNOLOGY FOR THE REMOVAL OF FLUORIDE  

SciTech Connect (OSTI)

Vacuum distillation of chloride salts from plutonium oxide (PuO{sub 2}) and simulant PuO{sub 2} has been previously demonstrated at Department of Energy (DOE) sites using kilogram quantities of chloride salt. The apparatus for vacuum distillation contains a zone heated using a furnace and a zone actively cooled using either recirculated water or compressed air. During a vacuum distillation operation, a sample boat containing the feed material is placed into the apparatus while it is cool, and the system is sealed. The system is evacuated using a vacuum pump. Once a sufficient vacuum is attained, heating begins. Volatile salts distill from the heated zone to the cooled zone where they condense, leaving behind the non-volatile materials in the feed boat. The application of vacuum salt distillation (VSD) is of interest to the HB-Line Facility and the MOX Fuel Fabrication Facility (MFFF) at the Savannah River Site (SRS). Both facilities are involved in efforts to disposition excess fissile materials. Many of these materials contain chloride and fluoride salt concentrations which make them unsuitable for dissolution without prior removal of the chloride and fluoride salts. Between September 2009 and January 2011, the Savannah River National Laboratory (SRNL) and HB-Line designed, developed, tested, and successfully deployed a system for the distillation of chloride salts. Subsequent efforts are attempting to adapt the technology for the removal of fluoride. Fluoride salts of interest are less-volatile than the corresponding chloride salts. Consequently, an alternate approach is required for the removal of fluoride without significantly increasing the operating temperature. HB-Line Engineering requested SRNL to evaluate and demonstrate the feasibility of an alternate approach using both non-radioactive simulants and plutonium-bearing materials. Whereas the earlier developments targeted the removal of sodium chloride (NaCl) and potassium chloride (KCl), the current activities are concerned with the removal of the halide ions associated with plutonium trifluoride (PuF{sub 3}), plutonium tetrafluoride (PuF{sub 4}), calcium fluoride (CaF{sub 2}), and calcium chloride (CaCl{sub 2}). This report discusses non-radioactive testing of small-scale and pilot-scale systems and radioactive testing of a small-scale system. Experiments focused on demonstrating the chemistry for halide removal and addressing the primary engineering questions associated with a change in the process chemistry.

Pierce, R.; Pak, D.

2011-08-10T23:59:59.000Z

152

Report on Produced Water  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

September 2009 Produced Water Volumes and Management Practices Page 3 Table of Contents Executive Summary ........................................................................................................................ 7 Chapter 1 - Introduction ............................................................................................................. 11 1.1 Purpose .......................................................................................................................... 11 1.2 Background ................................................................................................................... 11 1.3 Overview ....................................................................................................................... 11

153

Report on Produced Water  

Office of Scientific and Technical Information (OSTI)

of the pond, as well as the quality of the produced water. In semiarid regions, hot, dry air moving from a land surface will result in high evaporation rates for smaller ponds. As...

154

Method for producing Nb/sub 3/Sn superconductors  

SciTech Connect (OSTI)

In a method for producing a Nb/sub 3/Sn superconductor which comprises drawing a composite having a core of a Nb-Hf alloy containing 0.1 to 30 atomic % of Hf and a sheath containing Cu and Sn, and heattreating the composite to form a Nb/sub 3/Sn layer between the core and the sheath; the improvement wherein the sheath is formed of pure Cu, a Cu-Sn alloy containing not more than 6 atomic % of Sn, a Cu -Ga alloy containing not more than 20 atomic % of Ga, a Cu-Al alloy containing not more than 20 atomic % of Al, a Cu-Ga-Sn alloy containing not more than 6 atomic % of Sn and not more than 20 atomic % of Ga, or a Cu-Al-Sn alloy containing not more than atomic % of Sn and not more than 20 atomic % of Al; and after the drawing, a Sn film is coated on the surface of the sheath, and then the product having a Sn film coated thereon is heattreated.

Tachikawa, K.; Takeuchi, T.; Togano, K.

1982-07-27T23:59:59.000Z

155

Effects of fluoride and polymeric additives on the dissolution of calcite and the subsequent formation of fluorite  

Science Journals Connector (OSTI)

Abstract Fluoride is a problematic contaminant of the ground water arising from both natural and man-made origins. In this report, the fluoride uptake by calcite (calcium carbonate) was examined with emphasis on the effects of model organic compounds (polymers) and the possible adhesion of fluorite (calcium fluoride) on calcite. The primary route of the fluoride removal was fluorite formation through dissolution-and-recrystallization. While all model polymers affected the kinetics of fluorite formation, the positively charged poly(ethylene imine) had the most inhibiting influence. The observation of the calcite single crystals using atomic force microscopy revealed that the inhibitory effect was attributed to the retarded diffusion of fluoride to the calcite surface, which was also in accordance with the analysis of bulk experiments with calcite powders. It was also found that the oriented growth of fluorite was induced on the calcite (1 0 4) surface probably by the epitaxy with the (1 2 0) plane of fluorite. The current results could be of critical implications in the process design of fluoride removal by considering organic interferences and minimizing the need of flocculation step.

Taewook Yang; Wansoo Huh; Jae Young Jho; Il Won Kim

2014-01-01T23:59:59.000Z

156

Nitrogen Doping and Thermal Stability in HfSiOxNy Studied by Photoemission and X-ray Absorption Spectroscopy  

SciTech Connect (OSTI)

We have investigated nitrogen-doping effects into HfSiO{sub x} films on Si and their thermal stability using synchrotron-radiation photoemission and x-ray absorption spectroscopy. N 1s core-level photoemission and N K-edge absorption spectra have revealed that chemical-bonding states of N-Si{sub 3-x}O{sub x} and interstitial N{sub 2}-gas-like features are clearly observed in as-grown HfSiO{sub x}N{sub y} film and they decrease upon ultrahigh vacuum (UHV) annealing due to a thermal instability, which can be related to the device performance. Annealing-temperature dependence in Hf 4f and Si 2p photoemission spectra suggests that the Hf-silicidation temperature is effectively increased by nitrogen doping into the HfSiO{sub x} although the interfacial SiO{sub 2} layer is selectively reduced. No change in valence-band spectra upon UHV annealing suggests that crystallization of the HfSiO{sub x}N{sub y} films is also hindered by nitrogen doping into the HfSiO{sub x}.

Toyoda, Satoshi; Okabayashi, Jun; Takahashi, Haruhiko; Oshima, Masaharu; /Tokyo U.; Lee, Dong-Ick; Sun, Shiyu; sun, Steven; Pianetta, Piero A.; /SLAC, SSRL; Ando, Takashi; Fukuda, Seiichi; /SONY, Atsugi

2005-12-14T23:59:59.000Z

157

A low temperature fabrication of HfO{sub 2} films with supercritical CO{sub 2} fluid treatment  

SciTech Connect (OSTI)

To improve the dielectric properties of sputter-deposited hafnium oxide (HfO{sub 2}) films, the supercritical CO{sub 2} (SCCO{sub 2}) fluid technology is introduced as a low temperature treatment. The ultrathin HfO{sub 2} films were deposited on p-type (100) silicon wafer by dc sputtering at room temperature and subsequently treated with SCCO{sub 2} fluids at 150 deg. C to diminish the traps in the HfO{sub 2} films. After SCCO{sub 2} treatment, the interfacial parasitic oxide between the Si substrate and HfO{sub 2} layer is only about 5 A, and the oxygen content of the HfO{sub 2} films apparently increased. From current-voltage (I-V) and capacitance-voltage (C-V) measurements, the leakage current density of the SCCO{sub 2}-treated HfO{sub 2} films is repressed from 10{sup -2} to 10{sup -7} A/cm{sup 2} at electric field=3 MV/cm due to the reduction of traps in the HfO{sub 2} films. The equivalent oxide thickness also obviously decreased. Besides, the efficiency of terminating traps is relative to the pressure of the SCCO{sub 2} fluids.

Tsai, C.-T.; Huang, F.-S. [Institute of Electronics Engineering, National Tsing Hua University, HsinChu 300, Taiwan (China); Chang, T.-C. [Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-set University, 70 Lien-hai Road, Kaohsiung 804, Taiwan (China); Institute of Electro-Optical Engineering, National Sun Yat-sen University, Kaohsiung 804, Taiwan (China); Kin, K.-T. [Industrial Technology Research Institute-Energy and Environment Research Laboratories, Hsinchu 300, Taiwan (China); Liu, P.-T.; Yang, P.-Y. [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 300, Taiwan (China); Weng, C.-F. [Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-set University, 70 Lien-hai Road, Kaohsiung 804, Taiwan (China)

2008-04-01T23:59:59.000Z

158

Nuclear quantum effects in water exchange around lithium and fluoride ions  

E-Print Network [OSTI]

We employ classical and ring polymer molecular dynamics simulations to study the effect of nuclear quantum fluctuations on the structure and the water exchange dynamics of aqueous solutions of lithium and fluoride ions. While we obtain reasonably good agreement with experimental data for solutions of lithium by augmenting the Coulombic interactions between the ion and the water molecules with a standard Lennard-Jones ion-oxygen potential, the same is not true for solutions of fluoride, for which we find that a potential with a softer repulsive wall gives much better agreement. A small degree of destabilization of the first hydration shell is found in quantum simulations of both ions when compared with classical simulations, with the shell becoming less sharply defined and the mean residence time of the water molecules in the shell decreasing. In line with these modest differences, we find that the mechanisms of the exchange processes are unaffected by quantization, so a classical description of these reaction...

Wilkins, David M; Dang, Liem X

2015-01-01T23:59:59.000Z

159

PEG/Ion -Scoring Sheet 1. 0.2 M Sodium Fluoride, 20% PEG 3350  

E-Print Network [OSTI]

3350 23. 0.2 M Ammonium Formate, 20% PEG 3350 24. 0.2 M Lithium Acetate, 20% PEG 3350 25. 0.2 M Acetate, 20% PEG 3350 31. 0.2 M Lithium Sulfate, 20% PEG 3350 32. 0.2 M Magnesium Sulfate, 20% PEG 3350 33 3350 3. 0.2 M Ammonium Fluoride, 20% PEG 3350 4. 0.2 M Lithium Chloride, 20% PEG 3350 5. 0.2 M

Hill, Chris

160

Electronic structure and magnetic susceptibility of the different structural modifications of Ti, Zr, and Hf metals  

Science Journals Connector (OSTI)

The electronic structure of the early transition metals Ti, Zr, and Hf has been investigated for the hexagonal (?), hcp (?), bcc (?), and fcc phases using the linear-muffin-tin-orbital method of band-structure calculation. The results of these investigations are discussed in the light of previous band-structure calculations and experimental data closely related to the electronic structure (low-temperature specific heat, superconductive properties and magnetic susceptibility). It is found from the theoretical calculations that the electronic density of states at the Fermi level increases in the phase sequence hexagonal (?)?hcp (?)?fcc?bcc (?) and this behavior is unambiguously reflected in all the experimental data as well. A separation of the magnetic susceptibility into its components is performed and from this, the temperature dependence of the Pauli susceptibility for Ti, Zr, and Hf is deduced.

I. Bakonyi, H. Ebert, and A. I. Liechtenstein

1993-09-15T23:59:59.000Z

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161

EFFECT OF AGING ON THE PHASE TRANSFORMATION AND MECHANICAL BEHAVIOR OF Ti36Ni49Hf15 HIGH  

E-Print Network [OSTI]

and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China (Received August 19 the microstructure, transformation temperature, mechanical properties and shape memory effects (SMEs) for Ti36Ni49Hf

Zheng, Yufeng

162

Human Factors Process Failure Mode and Effects Analysis (HF PFMEA) Application in the Evaluation of Management Risks  

E-Print Network [OSTI]

.3.1. Mechanisms of Prevention ............................................................................................... 11 2.4. Human Factors Process Failure Mode and Effects Analysis (HF PFMEA) ....................... 11 2.5. FMEA Components... ........................................................................................... 15 2.5.5. Risk Priority Number ....................................................................................................... 17 2.6. FMEA Model...

Soguilon, Nenita M.

2009-12-18T23:59:59.000Z

163

Electronic properties of InP (001)/HfO{sub 2} (001) interface: Band offsets and oxygen dependence  

SciTech Connect (OSTI)

Using ab-initio methods, atomic structures and electronic properties of InP (001)/HfO{sub 2} (001) interface are studied within the framework of density functional theory. We examine the InP/HfO{sub 2} model interface electronic structures under varying oxidation conditions. The effects of indium and phosphorous concentrations on interfacial bonding, defect states, band offsets, and the thermodynamic stability at the interface are also investigated. The origin of interfacial gap states in InP (001)/HfO{sub 2} (001) interface are proposed, mainly from the P-rich oxides, which is validated by our experimental work. This highlights the importance of surface passivation prior to high-? deposition based on the in situ spectroscopic results of atomic layer deposition of HfO{sub 2} on InP.

KC, Santosh; Dong, Hong; Longo, Roberto C.; Xiong, Ka [Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States); Wang, Weichao [Department of Electronics and Microelectronics and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071 (China); Wallace, Robert M.; Cho, Kyeongjae, E-mail: kjcho@utdallas.edu [Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080 (United States)

2014-01-14T23:59:59.000Z

164

Initial phases in sputter deposited HfO{sub 2}-Al{sub 2}O{sub 3} nanolaminate films  

SciTech Connect (OSTI)

Nanolaminate films of crystalline HfO{sub 2} and amorphous Al{sub 2}O{sub 3} were grown by reactive sputter deposition on unheated fused SiO{sub 2} and the surface oxide of <111> Si. X-ray diffraction showed the amount of monoclinic (m) HfO{sub 2} decreased with decreasing HfO{sub 2} layer thickness, consistent with a finite crystal size effect. High resolution transmission electron microscopy of individual crystallites detected tetragonal (t) and orthorhombic (o) HfO{sub 2} as the initial phases formed. Whereas the t{yields}m transition is accomplished by a shear mechanism, we demonstrate the important role of polysynthetic twinning for the o{yields}m transition.

Hoppe, E. E.; Aita, C. R.; Gajdardziska-Josifovska, M. [Advanced Coatings Experimental Laboratory, University of Wisconsin-Milwaukee, P.O. Box 784, Milwaukee, Wisconsin 53201 (United States); Department of Physics and Laboratory for Surface Studies, University of Wisconsin-Milwaukee, P.O. Box 413, Milwaukee, Wisconsin 53201 (United States)

2007-11-12T23:59:59.000Z

165

Enhanced electrical characteristics of Au nanoparticles embedded in high-k HfO{sub 2} matrix  

SciTech Connect (OSTI)

We present experimental results for laser-induced Au nanoparticle (NP) embedded in a HfO{sub 2} high-k dielectric matrix. Cross-sectional transmission electron microscopy images showed that the Au NPs of 8 nm in diameter were clearly embedded in HfO{sub 2} matrix. Capacitance-voltage measurements of Pt/HfO{sub 2}/Au NPs/HfO{sub 2} on p-type Si substrate reliably exhibited metal-oxide-semiconductor behavior with a large flatband shift of 4.7 V. In addition, the charge retention time at room temperature was found to exceed 10{sup 5} h. This longer time was attributed to the higher electron barrier height via high work function of the Au NP.

Yang, Jung Yup; Kim, Ju Hyung; Choi, Won Joon; Do, Young Ho; Kim, Chae Ok; Hong, Jin Pyo [New Functional Materials and Devices Laboratory, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of)

2006-09-15T23:59:59.000Z

166

Reversed spin polarization at the Co(001)-HfO2(001) interface  

Science Journals Connector (OSTI)

Ab initio electronic-structure calculations on the Co(001)-HfO2(001) interface are reported. The spin polarization of conduction electrons is positive at the interface, i.e., it is reversed with respect to the spin polarization in bulk Co. The electronic structure is very sensitive to the interface structure; without atomic relaxations the reversed spin polarization is not found. The possible relation with spin-polarized tunneling and magnetoresistance is discussed.

P. K. de Boer; G. A. de Wijs; R. A. de Groot

1998-12-15T23:59:59.000Z

167

Reactive ion beam etching of HfO{sub 2} film and removal of sidewall redeposition  

SciTech Connect (OSTI)

Comparative studies on ion beam etching (IBE) and reactive ion beam etching (RIBE) of HfO{sub 2} film have been carried out using photoresist as the masking layer. The etching rates of HfO{sub 2} film and photoresist mask in pure Ar and Ar/CHF{sub 3} mixture plasmas were measured as a function of ion energy, plasma composition, and ion beam incident angle. It has been found that the RIBE with Ar/CHF{sub 3} plasma is capable of lowering the threshold energy of ion beam and increasing sputtering yield, compared to the IBE with pure Ar. The redeposition of photoresist sidewall is a major issue, due to the formation of nonvolatile etching products during sputtering of HfO{sub 2} film in both IBE and RIBE. However, the sidewall redeposition can be easily removed in HCl solutions with assistance of ultrasonic wave for RIBE with Ar/CHF{sub 3} plasma. Alternatively, the sidewall redeposition can be eliminated by controlling the slope of photoresist sidewall or combined with ion incident angle.

Wang Xudi; Liu Ying; Xu Xiangdong; Fu Shaojun; Cui Zheng [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 (China) and School of Mechanical and Automobile Engineering, Hefei University of Technology, Hefei 230009 (China); National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 (China); Central Microstructure Facility, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX (United Kingdom)

2006-07-15T23:59:59.000Z

168

Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si  

SciTech Connect (OSTI)

When metal electrodes are deposited on a high-{kappa} metal-oxide/SiO{sub 2}/Si stack, chemical interactions may occur both at the metal/high-{kappa} and the high-{kappa}/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO{sub 2}/SiO{sub 2}/Si stacks causes reduction of the SiO{sub 2} interfacial layer and (to a lesser extent) the HfO{sub 2} layer. Silicon atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for titanium-silicon interdiffusion through the high-{kappa} film in the presence of a titanium gate in crystalline HfO{sub 2} films is also reported.

Goncharova, Lyudmila V.; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny [Departments of Physics and Chemistry, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854 (United States); Lysaght, Pat S.; Bersuker, Gennadi I. [Sematech, Austin, Texas 78741 (United States)

2007-09-26T23:59:59.000Z

169

Phase stability and elastic properties of C15 compounds HfV{sub 2}+Nb  

SciTech Connect (OSTI)

The ternary phase diagram of Hf-V-Nb system has been established and the C15 and C14 Laves phase regions located. The structural stability of the cubic Laves phase HfV{sub 2}+Nb was examined using heat capacity measurements and transmission electron microscopy. It is found that the binary C 15 has a martensitic transformation at 115K and that Nb addition can eliminate the martensitic transformation and stabilize the C15 structure. The elastic properties vs. temperature of the C15 HfV{sub 2}+Nb were studied using the resonant ultrasound technique. It is observed that the shear and Young`s moduli increase abnormally with increasing temperature, the bulk modulus is virtually constant, and the Poisson`s ratio is very high and decreases abnormally with increasing temperature. The elastic properties of the C15 compound can be qualitatively understood using the electronic structure obtained from ab initio calculations. The relation between the phase stability and anomalous elastic properties is discussed based on these results.

Chu, F.; Mitchell, T.E. [Los Alamos National Lab., NM (United States); Pope, D.P. [Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Materials Science and Engineering

1994-10-01T23:59:59.000Z

170

Impact of titanium addition on film characteristics of HfO{sub 2} gate dielectrics deposited by atomic layer deposition  

SciTech Connect (OSTI)

The impact of 8-to 45-at. % Ti on physical and electrical characteristics of atomic-layer-deposited and annealed hafnium dioxide was studied using vacuum-ultraviolet spectroscopic ellipsometry, secondary ion mass spectroscopy, transmission electron microscopy, atomic force microscopy, x-ray diffraction, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and x-ray reflectometry. The role of Ti addition on the electrical performance is investigated using molybdenum (Mo)-gated capacitors. The film density decreases with increasing Ti addition. Ti addition stabilizes the amorphous phase of HfO{sub 2}, resulting in amorphous films as deposited. After a high-temperature annealing, the films transition from an amorphous to a polycrystalline phase. Orthorhombic Hf-Ti-O peaks are detected in polycrystalline films containing 33-at. % or higher Ti content. As Ti content is decreased, monoclinic HfO{sub 2} becomes the predominant microstructure. No TiSi is formed at the dielectric/Si interface, indicating films with good thermal stability. The band gap of Hf-Ti-O was found to be lower than that of HfO{sub 2}. Well-behaved capacitance-voltage and leakage current density-voltage characteristics were obtained for Hf-Ti-O. However, an increased leakage current density was observed with Ti addition. The data from capacitance-voltage stressing indicate a smaller flatband voltage (V{sub fb}) shift in the HfO{sub 2} films with low Ti content when compared with the HfO{sub 2} films. This indicates less charge trapping with a small amount of Ti addition.

Triyoso, D.H.; Hegde, R.I.; Zollner, S.; Ramon, M.E.; Kalpat, S.; Gregory, R.; Wang, X.-D.; Jiang, J.; Raymond, M.; Rai, R.; Werho, D.; Roan, D.; White, B.E. Jr.; Tobin, P.J. [Freescale Semiconductor, Inc., Advanced Products Research and Development Laboratory, 3501 Ed Bluestein Boulevard, Austin, Texas 78721 (United States)

2005-09-01T23:59:59.000Z

171

Electronic Structures of C28H4 and Hf@C28H4 and Their Ions. SCF Calculations  

Science Journals Connector (OSTI)

In our calculations, we use the ab initio restricted Hartree?Fock (SCF) and configuration interaction (CI) methods to study the electronic structure respectively excluding and including electron correlation and the spin?orbit interaction. ... Systems of Calculation. ... The molecular integrals were calculated once for C28H4 (or Hf@C28H4) and stored on disk for all the SCF calculations of the neutral molecule and ions of C28H4 (or Hf@C28H4). ...

Debbie Fu-Tai Tuan; Russell M. Pitzer

1996-04-11T23:59:59.000Z

172

Etching characteristics of high-k dielectric HfO{sub 2} thin films in inductively coupled fluorocarbon plasmas  

SciTech Connect (OSTI)

Inductively coupled fluorocarbon (CF{sub 4}/Ar and C{sub 4}F{sub 8}/Ar) plasmas were used to etch HfO{sub 2}, which is a promising high-dielectric-constant material for the gate of complementary metal-oxide-semiconductor devices. The etch rates of HfO{sub 2} in CF{sub 4}/Ar plasmas exceeded those in C{sub 4}F{sub 8}/Ar plasmas. The tendency for etch rates to become higher in fluorine-rich (high F/C ratio) conditions indicates that HfO{sub 2} can be chemically etched by fluorine-containing species. In C{sub 4}F{sub 8}/Ar plasmas with a high Ar dilution ratio, the etch rate of HfO{sub 2} increased with increasing bias power. The etch rate of Si, however, decreased with bias power, suggesting that the deposition of carbon-containing species increased with increasing the power and inhibited the etching of Si. The HfO{sub 2}/Si selectivity monotonically increased with increasing power, then became more than 5 at the highest tested bias power. The carbon-containing species to inhibit etching of Si play an important role in enhancing the HfO{sub 2}/Si selectivity in C{sub 4}F{sub 8}/Ar plasmas.

Takahashi, Kazuo; Ono, Kouichi; Setsuhara, Yuichi [Department of Aeronautics and Astronautics, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)

2005-11-15T23:59:59.000Z

173

Effects of N{sub 2}, O{sub 2}, and Ar plasma treatments on the removal of crystallized HfO{sub 2} film  

SciTech Connect (OSTI)

The effects of plasma treatment using Ar, N{sub 2}, and O{sub 2} on the removal of crystallized HfO{sub 2} films in a dilute HF solution were studied. The resulting damage in source and drain regions, and recess in isolation regions were also investigated. It was found that plasma nitridation with an ion energy of several hundred electron volts can lower the wet etch resistance of crystallized HfO{sub 2} films up to 70 A thick through the generation of Hf-N bonds. However, thermal nitridation did not introduce sufficient nitrogen into bulk crystallized HfO{sub 2} films to lower wet etch resistance. Plasma nitridation without bias power introduced nitrogen to the crystallized HfO{sub 2} in the region only within 10 A of the surface. The enhancement of the etch rate of crystallized HfO{sub 2} in dilute HF and the amount of recess in the active and isolation regions using N{sub 2}, O{sub 2}, and Ar plasma treatment have been evaluated. Results show that N{sub 2} plasma treatment is the most effective in enhancing the removal rate of crystallized HfO{sub 2} in dilute HF and minimizing recess on substrate among the plasmas studied.

Chen Jinghao; Yoo, Won Jong; Chan, Daniel S.H. [Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

2006-01-15T23:59:59.000Z

174

Method for producing superconductors  

SciTech Connect (OSTI)

A method for producing a V3Al superconductor is disclosed which comprises making a composite composed of a sheath portion of a copper alloy containing 1 to 15 atomic percent of germanium, 1 to 15 atomic percent of silicon or 2 to 25 atomic percent of gallium and surrounded by the sheath portion, at least one core portion of a vanadium-aluminum alloy containing 0.5 to 20 atomic percent of aluminum; elongating the composite; and then heat-treating the elongated composite thereby to form a V3(Al, Ge), V3(Al, Si) or V3(Al, Ga) layer between the sheath portion and the core portion.

Inoue, K.; Tachikawa, K.; Togano, K.

1982-03-30T23:59:59.000Z

175

Reactions of aluminum with uranium fluorides and oxyfluorides  

SciTech Connect (OSTI)

Every 30 to 40 million operating hours a destructive reaction is observed in one of the {approximately}4000 large compressors that move UF{sub 6} through the gaseous diffusion plants. Despite its infrequency, such a reaction can be costly in terms of equipment and time. Laboratory experiments reveal that the presence of moderate pressures of UF{sub 6} actually cools heated aluminum, although thermodynamic calculations indicate the potential for a 3000-4000{degrees}C temperature rise. Within a narrow and rather low (<100 torr; 1 torr = 133.322 Pa) pressure range, however, the aluminum is seen to react with sufficient heat release to soften an alumina boat. Three things must occur in order for aluminum to react vigorously with either UF{sub 6} or UO{sub 2}F{sub 2}. 1. An initiating source of heat must be provided. In the compressors, this source can be friction, permitted by disruption of the balance of the large rotating part or by creep of the aluminum during a high-temperature treatment. In the absence of this heat source, compressors have operated for 40 years in UF{sub 6} without significant reaction. 2. The film protecting the aluminum must be breached. Melting (of UF{sub 5} at 620 K or aluminum at 930 K) can cause such a breach in laboratory experiments. In contrast, holding Al samples in UF{sub 6} at 870 K for several hours produces only moderate reaction. Rubbing in the cascade can undoubtedly breach the protective film. 3. Reaction products must not build up and smother the reaction. While uranium products tend to dissolve or dissipate in molten aluminum, AIF{sub 3} shows a remarkable tendency to surround and hence protect even molten aluminum. Hence the initial temperature rise must be rapid and sufficient to move reactants into a temperature region in which products are removed from the reaction site.

Leitnaker, J.M.; Nichols, R.W.; Lankford, B.S. [Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States)

1991-12-31T23:59:59.000Z

176

Neutron diffraction studies of antiferromagnetism in manganous fluoride and some isomorphous compounds  

E-Print Network [OSTI]

. CALCULATED AND OBSERVED INTENSITIES MnF2..................53 VI. CALCULATED AND OBSERVED INTENSITIES FeF2..................57 VII. CALCULATED AND OBSERVED INTENSITIES CqF2..................62 VIII. CALCULATED AND OBSERVED INTENSITIES NiF2... 18. Diffraction Patterns from C0F2............................ 59 19. Saturation Curve of F2 in CoF0 and NiFo.................6l 100 2 2 20. NiF2 Diffraction Patterns................................0\\- 21. Saturation Curves for the Fluorides...

Erickson, Richard Ames

1952-01-01T23:59:59.000Z

177

Fluoride removal in the presence of organophosphates: application to chemical warfare agent destruction  

E-Print Network [OSTI]

generated. Of the many commercially available anion exchange resins, two were identified by their manufacturer as possible fluoride exchangers. Rohm & Haas' Amberlite IRA- 400(OH/Gl) and Dow Corporation's Dowex MWA-1 were examined for their ability... crystal 105-107 extremel soluble Table 63: Physical Properties of MPA, GAS? 993-13-5. *As determined by titration, appendix F. APPENDIX C REVIEW OF ION EXCHANGE Ion exchange is based on the principle of a fixed ionic group bound to a resin which...

Wenaas, Christopher Eric

1996-01-01T23:59:59.000Z

178

Methods of using ionic liquids having a fluoride anion as solvents  

DOE Patents [OSTI]

A method in one embodiment includes contacting a strongly hydrogen bonded organic material with an ionic liquid having a fluoride anion for solubilizing the strongly hydrogen bonded organic material; and maintaining the ionic liquid at a temperature of about 90.degree. C. or less during the contacting. A method in another embodiment includes contacting a strongly hydrogen bonded organic material with an ionic liquid having an acetate or formate anion for solubilizing the strongly hydrogen bonded organic material; and maintaining the ionic liquid at a temperature of less than about 90.degree. C. during the contacting.

Pagoria, Philip (Livermore, CA); Maiti, Amitesh (San Ramon, CA); Gash, Alexander (Brentwood, CA); Han, Thomas Yong (Pleasanton, CA); Orme, Christine (Oakland, CA); Fried, Laurence (Livermore, CA)

2011-12-06T23:59:59.000Z

179

Process for producing ethanol  

SciTech Connect (OSTI)

A process is described for producing ethanol from raw materials containing a high dry solid mash level having fermentable sugars or constituents which can be converted into sugars, comprising the steps of: (a) liquefaction of the raw materials in the presence of an alpha amylase to obtain liquefied mash; (b) saccharification of the liquefied mash in the presence of a glucoamylase to obtain hydrolysed starch and sugars; (c) fermentation of the hydrolysed starch and sugars by yeast to obtain ethanol; and (d) recovering the obtained ethanol, wherein an acid fungal protease is introduced to the liquefied mash during the saccharification and/or to the hydrolysed starch and sugars during the fermentation, thereby increasing the rate of production of ethanol as compared to a substantially similar process conducted without the introduction of the protease.

Lantero, O.J.; Fish, J.J.

1993-07-27T23:59:59.000Z

180

Mechanisms and selectivity for etching of HfO{sub 2} and Si in BCl{sub 3} plasmas  

SciTech Connect (OSTI)

The authors have investigated plasma etching of HfO{sub 2}, a high dielectric constant material, and poly-Si in BCl{sub 3} plasmas. Etching rates were measured as a function of substrate temperature (T{sub s}) at several source powers. Activation energies range from 0.2 to 1.0 kcal/mol for HfO{sub 2} and from 0.8 to 1.8 kcal/mol for Si, with little or no dependence on source power (20-200 W). These low activation energies suggest that product removal is limited by chemical sputtering of the chemisorbed Hf or Si-containing layer, with a higher T{sub s} only modestly increasing the chemical sputtering rate. The slightly lower activation energy for HfO{sub 2} results in a small improvement in selectivity over Si at low temperature. The surface layers formed on HfO{sub 2} and Si after etching in BCl{sub 3} plasmas were also investigated by vacuum-transfer x-ray photoelectron spectroscopy. A thin boron-containing layer was observed on partially etched HfO{sub 2} and on poly-Si after etching through HfO{sub 2} films. For HfO{sub 2}, a single B(1s) feature at 194 eV was ascribed to a heavily oxidized species with bonding similar to B{sub 2}O{sub 3}. B(1s) features were observed for poly-Si surfaces at 187.6 eV (B bound to Si), 189.8 eV, and 193 eV (both ascribed to BO{sub x}Cl{sub y}). In the presence of a deliberately added 0.5% air, the B-containing layer on HfO{sub 2} is largely unaffected, while that on Si converts to a thick layer with a single B(1s) peak at 194 eV and an approximate stoichiometry of B{sub 3}O{sub 4}Cl.

Wang Chunyu; Donnelly, Vincent M. [Department of Chemical and Biomolecular Engineering, University of Houston, 4800 Calhoun Road, Houston, Texas 77204 (United States)

2008-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Polyatomic-buffered pulsed DF/HF laser using electron-beam or photolysis initiation  

SciTech Connect (OSTI)

The initial performance of pulsed DF/HF chain lasers is presented in which the effect of polyatomic diluents on laser behavior is systematically explored. Laser energy, pulse length, and spectral output were investigated as functions of diluent gas (NF3, SF6, CF4), total mixture pressure, the partial pressure of fuel and oxidizer, O/sub 2/ concentration, and strength of initiation. Magnetically-confined electron beam and photolytically initiated systems are found to yield comparable performance. Results include 65 J/liter-atm DF output at 200 Torr cavity pressure and the ability to suppress long wavelength transitions from the free-running spectrum. 21 references.

Amimoto, S.T.; Gross, R.W.F.; Harper, G.N.; Azevedo, L.S.; Hofland, R. Jr.

1987-06-01T23:59:59.000Z

182

High-K barrier penetration in Hf174: A challenge to K selection  

Science Journals Connector (OSTI)

A sensitive study of the decay of the deformation-aligned K=14, 4-?s isomer in Hf174 has revealed a multitude of the K-forbidden branches to the ground-state rotational band and other low-K bands, in competition with the known decays to high-K bands. The isomeric transitions have consistently low hindrance factors. These anomalous findings in an axially symmetric deformed nucleus severely test our understanding of the K-selection rule. The isomeric decay to an I=12 rotation-aligned state, and its mixing with the I=12 yrast state, provide a partial explanation.

P. M. Walker; G. Sletten; N. L. Gjrup; M. A. Bentley; J. Borggreen; B. Fabricius; A. Holm; D. Howe; J. Pedersen; J. W. Roberts; J. F. Sharpey-Schafer

1990-07-23T23:59:59.000Z

183

Major Energy Producers  

Gasoline and Diesel Fuel Update (EIA)

206(92) 206(92) Performance Profiles of Major Energy Producers 1992 January 1994 Elk. I nergy Information dministration This publication and other Energy Information Administration (EIA) publications may be purchased from the Superintendent of Documents, U.S. Government Printing Office. All telephone orders should be directed to: U.S. Government Printing Office Superintendent of Documents McPherson Square Bookstore U.S. Government Printing Office 1510 H Street, N.W. Washington, DC 20402 Washington, DC 20005 (202)783-3238 (202)653-2050 FAX (202)512-2233 FAX (202)376-5055 8 a.m. to 4 p.m., eastern time, M-F 9 a.m. to 4:30 p.m., eastern time, M-F All mail orders should be directed to: U.S. Government Printing Office P.O. Box 371954 Pittsburgh, PA 15250-7954 Complimentary subscriptions and single issues are available to certain groups of subscribers, such as

184

Method for producing superconductors  

SciTech Connect (OSTI)

In a method for producing v/sub 3/Ga superconductors which comprises forming a composite of a core portion and a sheath portion surrounding said core portion, said sheath portion being composed of a gallium-containing alloy selected from the group consisting of copper-gallium and copper-silver-gallium alloys, and said core portion being composed of a vanadium metal, elongating said composite, and heat-treating the resulting elongated composite to form a v/sub 3/Ga layer between said sheath and core portions; the improvement wherein the gallium-containing alloy has a gallium content of 0.1 to 30 atomic percent and additionally contains at least one metal selected from the group consisting of 0.05 to 5 atomic percent of magnesium, 0.5 to 10 atomic percent of aluminum , 0.1 to 10 atomic percent of cerium and 0.05 to 10 atomic percent of sodium, and the vanadium metal is a vanadium alloy containing 0.1 to 15 atomic percent of gallium.

Asano, T.; Tachikawa, K.; Tanaka, Y.; Yoshida, Y.

1981-06-23T23:59:59.000Z

185

Effect of Phosphate, Fluoride, and Nitrate on Gibbsite Dissolution Rate and Solubility  

SciTech Connect (OSTI)

Laboratory tests have been completed with simulated tank waste samples to investigate the effects of phosphate, fluoride, and nitrate on the dissolution rate and equilibrium solubility of gibbsite in sodium hydroxide solution at 22 and 40{degrees}C. Results are compared to relevant literature data and to computer model predictions. The presence of sodium nitrate (3 M) caused a reduction in the rate of gibbsite dissolution in NaOH, but a modest increase in the equilibrium solubility of aluminum. The increase in solubility was not as large, though, as the increase predicted by the computer model. The presence of phosphate, either as sodium phosphate or sodium fluoride phosphate, had a negligible effect on the rate of gibbsite dissolution, but caused a slight increase in aluminum solubility. The magnitude of the increased solubility, relative to the increase caused by sodium nitrate, suggests that the increase is due to ionic strength (or water activity) effects, rather than being associated with the specific ion involved. The computer model predicted that phosphate would cause a slight decrease in aluminum solubility, suggesting some Al-PO4 interaction. No evidence was found of such an interaction.

Herting, Daniel L. [Washington River Protection Solutions LLC (United States)

2014-01-29T23:59:59.000Z

186

Effect of Hf substitutions on the formation and superconductivity of Tl-1212 type phase TlSr{sub 2}(Ca{sub 1?x}Hf{sub x})Cu{sub 2}O{sub 7??}  

SciTech Connect (OSTI)

The TlSr{sub 2}(Ca{sub 1?x}Hf{sub x})Cu{sub 2}O{sub 7??} (Tl-1212) superconductor for x = 0.0 to 0.4 has been prepared by the solid state reaction method and studied by powder X-ray diffraction method, electrical resistance and scanning electron microscope (SEM). Most of the samples showed the Tl-1212 as the major phase and Tl-1201 as the minor phases. Small amounts of Hf-substitution (x ? 0.15 or x ? 0.25) maintained the formation of the Tl-1212 phase but larger amounts led to the formation of 1201 and an unknown impurity phase. The resistance versus temperature curve showed metallic behavior for all samples. The resistance versus temperature curves showed onset transition temperature (T{sub c} {sub onset}) between 38 and 47 K for Hf substitution.

Al-Sharabi, Annas; Abd-Shukor, R. [School of Applied Physics, Universiti Kebangsaan Malaysia 43600 Bangi, Selangor (Malaysia)

2013-11-27T23:59:59.000Z

187

Comparison of femtosecond and nanosecond laser-induced damage in HfO{sub 2} single-layer film and HfO{sub 2}-SiO{sub 2} high reflector  

SciTech Connect (OSTI)

HfO{sub 2} single layers, 800 nm high-reflective (HR) coating, and 1064 nm HR coating were prepared by electron-beam evaporation. The laser-induced damage thresholds (LIDTs) and damage morphologies of these samples were investigated with single-pulse femtosecond and nanosecond lasers. It is found that the LIDT of the HfO{sub 2} single layer is higher than the HfO{sub 2}-SiO{sub 2} HR coating in the femtosecond regime, while the situation is opposite in the nanosecond regime. Different damage mechanisms are applied to study this phenomenon. Damage morphologies of all samples due to different laser irradiations are displayed.

Yuan Lei; Zhao Yuanan; Shang Guangqiang; Wang Chengren; He Hongbo; Shao Jianda; Fan Zhengxiu [Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China) and Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China) and Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

2007-03-15T23:59:59.000Z

188

Suppression of near-edge optical absorption band in sputter deposited HfO{sub 2}-Al{sub 2}O{sub 3} nanolaminates containing nonmonoclinic HfO{sub 2}  

SciTech Connect (OSTI)

Nanolaminates of polycrystalline (tetragonal+orthorhombic) HfO{sub 2} and amorphous Al{sub 2}O{sub 3} are sputter deposited on unheated fused SiO{sub 2}, air annealed at 573-1273 K, and analyzed by x-ray diffraction and spectrophometry. Significant O 2p{yields}Hf 5d interband absorption occurs in all films at energy E{>=}6.2 eV. For E<6.2 eV, films annealed below 1273 K retain a featureless optical absorption edge despite further crystallization. A band with a 5.65 eV onset concurrently develops with m-HfO{sub 2} crystallization after a 1273 K anneal, indicating this phase and not nanocrystallinity per se is responsible for increased absorption.

Hoppe, E. E.; Aita, C. R. [Advanced Coatings Experimental Laboratory, University of Wisconsin-Milwaukee, P.O. Box 784, Milwaukee, Wisconsin 53201 (United States)

2008-04-07T23:59:59.000Z

189

E-Print Network 3.0 - alkali metals phase Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: , calcium hypochlorite, hydrogen fluoride (HF) Ammonium Nitrate acids, metal powders, flammable liquids... , sodium carbide, turpentine, finely divided metals...

190

E-Print Network 3.0 - alkali metal dimers Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: , calcium hypochlorite, hydrogen fluoride (HF) Ammonium Nitrate acids, metal powders, flammable liquids... , sodium carbide, turpentine, finely divided metals...

191

Effective work function of Pt, Pd, and Re on atomic layer deposited HfO{sub 2}  

SciTech Connect (OSTI)

Platinum and Pd show a significant difference in work function on SiO{sub 2} and high-K materials (HfO{sub 2}). The effective metal work functions for Pd, Pt, and Re on atomic layer deposited HfO{sub 2}, which are different from the vacuum work function and important for device threshold voltage control, are measured by the C-V method. The difference is attributed to the dipoles at the metal/HfO{sub 2} interface, which is a result of charge transfer across the interface. Moreover, the extracted charge neutrality level and screening parameter are correlated with the phase development, film stoichiometry, and density of interface states at the metal/high-K interface.

Gu Diefeng; Dey, Sandwip K.; Majhi, Prashant [Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287-6006 (United States) and Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Planar CMOS Scaling, SEMATECH, Austin, Texas 78741 (United States)

2006-08-21T23:59:59.000Z

192

Local elastic modulus of RF sputtered HfO{sub 2} thin film by atomic force acoustic microscopy  

SciTech Connect (OSTI)

Atomic force acoustic microscopy (AFAM) is a useful nondestructive technique for measurement of local elastic modulus of materials at nano-scale spatial resolution by measuring the contact resonance spectra for higher order modes of the AFM cantilever. The elastic modulus of RF sputtered HfO{sub 2} thin film has been measured quantitatively, using reference approach in which measurements are performed on the test and reference samples. Using AFAM, the measured elastic modulus of the HfO{sub 2} thin film is 223±27 GPa, which is in agreement with the literature value of 220±40 GPa for atomic layer deposited HfO{sub 2} thin film using nanoindentation technique.

Jena, S., E-mail: shuvendujena9@gmail.com; Tokas, R. B., E-mail: shuvendujena9@gmail.com; Sarkar, P., E-mail: shuvendujena9@gmail.com; Thakur, S.; Sahoo, N. K. [Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400 085 (India); Misal, J. S.; Rao, K. D. [Optics and Thin Film Laboratory, Autonagar, BARC-Vizag, Visakhapatnam-530 012 (India)

2014-04-24T23:59:59.000Z

193

Effects of shock waves on the performance of a cw supersonic HF chemical laser  

SciTech Connect (OSTI)

The effects of oblique shock waves on the gain and the output power of a cw supersonic HF chemical laser are theoretically investigated. A one-dimensional model is used to solve the flow of a premixed H/sub 2/--SF/sub 6/--H/sub e/ or H/sub 2/--F/sub 2/--H/sub e/ mixture through the resonator, allowing the presence of oblique shock waves in the flow. It is shown that a shock wave significantly affects the laser performance due to the gas compression at the shock front and due to acceleration of the chemical and energy transfer processes. It was found that immediately behind the shock front the gain coefficients and the photon energy sharply increase and further downstream they fall off rapidly, thus the profiles of the gain and radiation flux become narrower along the flow direction. Integration of the radiation flux along the cavity coordinate reveals that in some cases the total available power is significantly higher than the available power obtained in the undisturbed flow. For HF lasers pumped by the chain reactions it was found that choking occurs over a wide range of flow parameters including very weak shock waves. This is due to the large amount of heat released by the exothermic reactions.

Stricker, J.; Waichman, K.

1984-09-01T23:59:59.000Z

194

Corrosion Behavior of Copper Thin Films in Organic HF-Containing Cleaning Solution for Semiconductor Applications  

SciTech Connect (OSTI)

The corrosion behavior of electrochemically deposited copper thin films in deaerated and non-deaerated commercial cleaning solutions containing HF was investigated. Potentiodynamic polarization experiments were carried out to determine active, active-passive, passive, and transpassive regions. Corrosion rates were calculated from Tafel slopes. The addition of hydrogen peroxide to the solution and its influence on corrosion was also investigated by employing inductively coupled plasma-mass spectroscopy (ICP-MS) and X-ray photoelectron spectroscopy (XPS). The ICP-MS and potentiodynamic methods yielded comparable Cu dissolution rates. Surface analysis using atomic force microscopy and scanning electron microscopy, performed before and after the cleaning solution treatment, did not reveal any indication of pitting corrosion. The presence of hydrogen peroxide in the cleaning solution led to more than an order of magnitude suppression of copper dissolution rate. We ascribe this phenomenon to the formation of interfacial CuO detected by XPS on the wafer surface that dissolves at a slower rate in dilute HF.

Nabil G. Mistkawi,a,b Makarem A. Hussein,b Malgorzata Ziomek-Moroz,c and

2009-11-13T23:59:59.000Z

195

Measurements of spatial and frequency coherence of an equatorial hf path during spread-F  

SciTech Connect (OSTI)

In August 1990, the authors set up an hf path on the equatorial path between Maloelap Atoll and Bikini Atoll. This path, which had a range of 702 km, reflected in the ionosphere approximately 100 km north of the Altair radar location on Kwajalein. Transmitters at Maloelap broadcasted four cw tones within bandwidth of either 4 kHz, 9 kHz, or 70 kHz to be used to determine frequency coherence and also a phase-coded pseudo random sequence with a bandwidth of 60 kHz (channel probe) to be used to determine time delay spread. A spatial array of antennas was deployed at Bikini to measure spatial and frequency coherence using the cw broadcasts. The system was run in the post-sunset time period over two weeks during which almost every night showed significant degradation due to spread F resulting in rapid fading, decreased spatial and frequency coherence, and increased time delay spread. Doppler spreads of greater than 20 Hz were not uncommon, and the spatial correlation distances and frequency coherence bandwidths became so small (50 meters and 1 kHz respectively) that the experiment had to be readjusted. Measurements taken by the Altair incoherent scatter radar and the CUPRI 50 MHz coherent scatter radar indicate that although the bistatic hf channel is affected by the large scale plume structures, most of the [open quotes]damage[close quotes] is done by the bottomside spread F.

Fitzgerald, T.J.; Argo, P.E.; Carlos, R.C.

1993-01-01T23:59:59.000Z

196

Measurements of spatial and frequency coherence of an equatorial hf path during spread-F  

SciTech Connect (OSTI)

In August 1990, the authors set up an hf path on the equatorial path between Maloelap Atoll and Bikini Atoll. This path, which had a range of 702 km, reflected in the ionosphere approximately 100 km north of the Altair radar location on Kwajalein. Transmitters at Maloelap broadcasted four cw tones within bandwidth of either 4 kHz, 9 kHz, or 70 kHz to be used to determine frequency coherence and also a phase-coded pseudo random sequence with a bandwidth of 60 kHz (channel probe) to be used to determine time delay spread. A spatial array of antennas was deployed at Bikini to measure spatial and frequency coherence using the cw broadcasts. The system was run in the post-sunset time period over two weeks during which almost every night showed significant degradation due to spread F resulting in rapid fading, decreased spatial and frequency coherence, and increased time delay spread. Doppler spreads of greater than 20 Hz were not uncommon, and the spatial correlation distances and frequency coherence bandwidths became so small (50 meters and 1 kHz respectively) that the experiment had to be readjusted. Measurements taken by the Altair incoherent scatter radar and the CUPRI 50 MHz coherent scatter radar indicate that although the bistatic hf channel is affected by the large scale plume structures, most of the {open_quotes}damage{close_quotes} is done by the bottomside spread F.

Fitzgerald, T.J.; Argo, P.E.; Carlos, R.C.

1993-07-01T23:59:59.000Z

197

An experimental study of the aqueous solubility and speciation of Y(III) fluoride at temperatures up to 250 C  

E-Print Network [OSTI]

are known to be of hydrothermal origin or modified by hydrothermal processes (e.g., Oreskes and Einaudi information on the behavior of the REE in hydrothermal processes is essential for a better understanding fluoride-rich hydrothermal systems. Our results emphasize the usefulness of the Y/Ho ratio as a geochemical

Devernal, Anne

198

High Energy Density and Breakdown Strength from ? and ? Phases in Poly(vinylidene fluoride-co-bromotrifluoroethylene) Copolymers  

Science Journals Connector (OSTI)

Poly(vinylidene fluoride) PVDF-based copolymers represent the state of the art dielectric polymers for high energy density capacitors. Past work on these copolymers has been done with limited emphasis on the effects of copolymer composition and with a ...

Matthew R. Gadinski; Kuo Han; Qi Li; Guangzu Zhang; Wuttiichai Reainthippayasakul; Qing Wang

2014-10-16T23:59:59.000Z

199

Energy parameters and stability of the discharge in a nonchain, self-sustained-discharge-pumped HF laser  

SciTech Connect (OSTI)

The generation and discharge are studied in a nonchain HF laser operating on mixtures of SF{sub 6} with hydrogen and hydrocarbons. The specific output energy of the laser is 8.8 J L{sup -1} (73 J L{sup -1} atm{sup -1}) and the total lasing efficiency is 5.5%. It is shown that the formation and maintaining of a volume discharge in self-sustained-discharge-pumped HF lasers with a large content of electronegative gases is caused by the accumulation of the volume discharge of negative ions in conducting regions. (letters)

Tarasenko, Viktor F; Orlovskii, Viktor M; Panchenko, Aleksei N [Institute of High Current Electronics, Siberian Branch, Russian Academy of Sciences, Tomsk (Russian Federation)

2001-12-31T23:59:59.000Z

200

Interplay between gadolinium dopants and oxygen vacancies in HfO{sub 2}: A density functional theory plus Hubbard U investigation  

SciTech Connect (OSTI)

The influence of gadolinium (Gd) doping on the oxygen vacancy (V{sub O}) in monoclinic HfO{sub 2} have been studied by the first-principles calculations within the spin-polarized generalized gradient approximation plus Hubbard U approach. It is found that the Gd dopant and V{sub O} show strong attractive interaction, resulting in a cooperative effect that the substitution of Gd for Hf (Gd{sub Hf}) would increase the probability of oxygen vacancies generation and vice versa. The Gd{sub Hf} is more energetically favorable to be next to the vacancy site of a three-coordinated oxygen (O3), forming a complex defect Gd{sub Hf} + V{sub O}. A single Gd{sub Hf} acts a hole donor and passivates the defect states of V{sub O}. Our results suggest that the decrease of the V{sub O}-related defect states observed in the photoluminescence spectra of Gd-HfO{sub 2} is because Gd doping passivates the defect states of V{sub O}, rather than caused by decrease of V{sub O} concentration. Our findings would clarify the debate about the influence of Gd doping on the oxygen vacancies in HfO{sub 2}.

Zhang, Wei [Department of Criminal Science and Technology, Nanjing Forest Police College, Nanjing 210023 (China); Hou, Z. F., E-mail: zhufeng.hou@gmail.com [Department of Electronic Science, Xiamen University, Xiamen 361005 (China)

2014-03-28T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

A comparison of EISCAT and HF Doppler observations of a ULF wave D. M. Wright, T. K. Yeoman, J. A. Davies  

E-Print Network [OSTI]

A comparison of EISCAT and HF Doppler observations of a ULF wave D. M. Wright, T. K. Yeoman, J. A, Wright et al. (1997) presented a detailed study of ULF wave signatures observed by a new sounder at high observed by HF Doppler Correspondence to: D. M. Wright Presented at the Eighth International EISCAT

Paris-Sud XI, Université de

202

Organic photovoltaic devices with the bilayer cathode interfacial structure of pyromellitic dianhydride and lithium fluoride  

Science Journals Connector (OSTI)

In this study, we fabricated and characterized an organic photovoltaic (OPV) device with a pyromellitic dianhydride (PMDA)/lithium fluoride (LiF) cathode interfacial layer between poly(3-hexylthiophene?2,5-diyl)(P3HT)+[6,6]-phenyl C61 butyric acid methyl ester (PCBM) and Al. Compared to the OPV device with a LiF-only cathode interfacial layer having a power conversion efficiency (PCE) of 2.7%, the OPV device with the bilayer cathode interfacial structure [PMDA (0.3 nm)/LiF (0.7 nm)] exhibited a reduced resistance and a PCE value enhanced to 3.9% under an illumination condition of 100 mW cm?2 (AM1.5). The observed improvement of the OPV characteristics was attributed to the reduced leakage current of the device by the bilayer cathode interfacial layer.

Eunkyoung Nam; Seungsik Oh; Donggeun Jung; Hyoungsub Kim; Heeyeop Chae; Junsin Yi

2012-01-01T23:59:59.000Z

203

Barium fluoride whispering-gallery-mode disk-resonator with one billion quality-factor  

E-Print Network [OSTI]

We demonstrate a monolithic optical whispering gallery mode resonator fabricated with barium fluoride (BaF$_2$) with an ultra-high quality ($Q$) factor above $10^9$ at $1550$ nm, and measured with both the linewidth and cavity-ring-down methods. Vertical scanning optical profilometry shows that the root mean square surface roughness of $2$ nm is achieved for our mm-size disk. To the best of our knowledge, we show for the first time that one billion $Q$-factor is achievable by precision polishing in relatively soft crystals with mohs hardness of ~$3$. We show that complex thermo-optical dynamics can take place in these resonators. Beside usual applications in nonlinear optics and microwave photonics, high energy particle scintillation detection utilizing monolithic BaF$_2$ resonators potentially becomes feasible.

Lin, Guoping; Henriet, Rémi; Jacquot, Maxime; Chembo, Yanne K

2015-01-01T23:59:59.000Z

204

Polyethylene-supported polyvinylidene fluoride–cellulose acetate butyrate blended polymer electrolyte for lithium ion battery  

Science Journals Connector (OSTI)

The polyethylene (PE)-supported polymer membranes based on the blended polyvinylidene fluoride (PVDF) and cellulose acetate butyrate (CAB) are prepared for gel polymer electrolyte (GPE) of lithium ion battery. The performances of the prepared membranes and the resulting \\{GPEs\\} are investigated by scanning electron microscopy, electrochemical impedance spectroscopy, linear potential sweep, and charge–discharge test. The effect of the ratio of PVDF to CAB on the performance of the prepared membranes is considered. It is found that the GPE based on the blended polymer with PVDF:CAB = 2:1 (in weight) has the largest ionic conductivity (2.48 × 10?3 S cm?1) and shows good compatibility with anode and cathode of lithium ion battery. The LiCoO2/graphite battery using this GPE exhibits superior cyclic stability at room temperature, storage performance at elevated temperature, and rate performance.

Jiansheng Liu; Weishan Li; Xiaoxi Zuo; Shengqi Liu; Zhao Li

2013-01-01T23:59:59.000Z

205

Testa Produce | Open Energy Information  

Open Energy Info (EERE)

Testa Produce Testa Produce Jump to: navigation, search Name Testa Produce Facility Testa Produce Sector Wind energy Facility Type Community Wind Facility Status In Service Owner Testa Produce Developer Testa Produce Energy Purchaser Testa Produce Location Chicago IL Coordinates 41.81065982°, -87.65433311° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.81065982,"lon":-87.65433311,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

206

INVESTIGATION OF LASER SUPPORTED DETONATION WAVES AND THERMAL COUPLING USING 2.8um HF LASER IRRADIATED METAL TARGETS  

E-Print Network [OSTI]

INVESTIGATION OF LASER SUPPORTED DETONATION WAVES AND THERMAL COUPLING USING 2.8um HF LASER of Hull, Hull, HU6 7RX, England. Abstract.- The formation and propagation of laser supported detonation was obtained in a of laser supported detonation waves and thermal o. 300 nsec. pulse (FHHM). The laser output

Boyer, Edmond

207

Computational investigation of the phase stability and the electronic properties for Gd-doped HfO{sub 2}  

SciTech Connect (OSTI)

Rare earth doping is an important approach to improve the desired properties of high-k gate dielectric oxides. We have carried out a comprehensive theoretical investigation on the phase stability, band gap, formation of oxygen vacancies, and dielectric properties for the Gd-doped HfO{sub 2}. Our calculated results indicate that the tetragonal phase is more stable than the monoclinic phase when the Gd doping concentration is greater than 15.5%, which is in a good agreement with the experimental observations. The dopant's geometric effect is mainly responsible for the phase stability. The Gd doping enlarges the band gap of the material. The dielectric constant for the Gd-doped HfO{sub 2} is in the range of 20–30 that is suitable for high-k dielectric applications. The neutral oxygen vacancy formation energy is 3.2?eV lower in the doped material than in pure HfO{sub 2}. We explain the experimental observation on the decrease of photoluminescence intensities in the Gd-doped HfO{sub 2} according to forming the dopant-oxygen vacancy complexes.

Wang, L. G. [General Research Institute for Nonferrous Metals, Beijing 100088 (China); California Institute of Technology, Pasadena, California 91125 (United States); Xiong, Y.; Xiao, W.; Cheng, L.; Du, J.; Tu, H. [General Research Institute for Nonferrous Metals, Beijing 100088 (China); Walle, A. van de [Brown University, Providence, Rhode Island 02912 (United States); California Institute of Technology, Pasadena, California 91125 (United States)

2014-05-19T23:59:59.000Z

208

Plastic deformation magnetic assembly of out-of-plane structures using vapour phase hydrofluoric (HF) acid release  

Science Journals Connector (OSTI)

We report on the fabrication of out-of-plane microstructures using plastic deformation magnetic assembly (PDMA) and vapour phase HF release process. A 0.5@mm thin silicon oxide (SiO"2) layer deposited on blank silicon has been implemented as a sacrificial ... Keywords: Dry release method, Hydrofluoric acid, Plastic deformation magnetic assembly

P. Argyrakis; R. Cheung

2009-11-01T23:59:59.000Z

209

The Long Wavelength Array (LWA): A Large HF/VHF Array for Solar Physics, Ionospheric Science, and Solar Radar  

E-Print Network [OSTI]

The Long Wavelength Array (LWA): A Large HF/VHF Array for Solar Physics, Ionospheric Science, and Solar Radar Namir E. Kassim Naval Research Laboratory, Washington, DC 20375 Stephen M. White AFRL will be a powerful tool for solar physics and space weather investigations, through its ability to characterize

Ellingson, Steven W.

210

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability  

E-Print Network [OSTI]

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability N 2007; published online 17 January 2008 This work investigates the role of hydrogen and nitrogen in a Ge. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from

Misra, Durgamadhab "Durga"

211

Plasma analyses during femtosecond laser ablation of Ti, Zr, and Hf  

SciTech Connect (OSTI)

Femtosecond laser ablation of Ti, Zr, and Hf has been investigated by means of in situ plasma diagnostics. Fast imaging was used to characterize the plasma plume expansion on a nanosecond time scale. In addition, time- and space-resolved optical emission spectroscopy was employed to determine the plume composition and the characteristic expansion velocities of plasma species. It is shown that two plume components with different expansion velocities are generated by the interaction of ultrashort laser pulses with metals. The composition and the expansion behavior of the two components have been analyzed as a function of laser fluence and target material. The results are discussed in terms of mechanisms responsible for ablation by ultrashort laser pulses.

Grojo, D.; Hermann, J.; Perrone, A. [LP3-UMR 6182 Centre National de la Recherche Scientifique, Faculte des Sciences de Luminy, Case 917, 13288 Marseille Cedex 9 (France); University of Lecce, Physics Department and National Nanotechnology Laboratory, 73100-Lecce (Italy)

2005-03-15T23:59:59.000Z

212

Assessment of the Use of Nitrogen Trifluoride for Purifying Coolant and Heat Transfer Salts in the Fluoride Salt-Cooled High-Temperature Reactor  

SciTech Connect (OSTI)

This report provides an assessment of the use of nitrogen trifluoride for removing oxide and water-caused contaminants in the fluoride salts that will be used as coolants in a molten salt cooled reactor.

Scheele, Randall D.; Casella, Andrew M.

2010-09-28T23:59:59.000Z

213

Beyond Conventional Cathode Materials for Li-ion Batteries and Na-ion Batteries Nickel fluoride conversion materials and P2 type Na-ion intercalation cathodes /  

E-Print Network [OSTI]

active material for Li-ion battery, Fe2OF4. ElectrochemistryIron Fluoride, in a Li Ion Battery: A Solid-State NMR, X-raymaterials for Li-ion battery……………………………133 8.2. P2 type

Lee, Dae Hoe

2013-01-01T23:59:59.000Z

214

Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming  

SciTech Connect (OSTI)

To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

Shoeb, Juline; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2009-11-15T23:59:59.000Z

215

Method of producing submicron size particles and product produced thereby  

DOE Patents [OSTI]

Submicron size particles are produced by using a sputtering process to deposit particles into a liquid. The liquid is processed to recover the particles therefrom, and the particles have sizes in the range of twenty to two hundred Angstroms. Either metallic or non-metallic particles can be produced, and the metallic particles can be used in ''metallic inks.'' 4 figs.

Bourne, R.S.; Eichman, C.C.; Welbon, W.W.

1988-05-11T23:59:59.000Z

216

Discharge produces hydrocarbons from coal  

Science Journals Connector (OSTI)

Discharge produces hydrocarbons from coal ... Studies of the reactions of coal in electric discharges by two chemists at the U.S. Bureau of Mines' Pittsburgh Coal Research Center may lead to improved ways of producing acetylene and other useful chemicals from coal. ... Other workers have produced high yields of acetylene from coal by extremely rapid pyrolysis using energy sources such as plasma jets, laser beams, arc-image reactors, and flash heaters. ...

1968-01-22T23:59:59.000Z

217

Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation  

SciTech Connect (OSTI)

Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

Yamashita, Y. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kôto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Yoshikawa, H.; Kobayashi, K. [National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kôto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Chikyo, T. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-01-28T23:59:59.000Z

218

Thermodynamic properties and interfacial layer characteristics of HfO{sub 2} thin films deposited by plasma-enhanced atomic layer deposition  

SciTech Connect (OSTI)

The thermodynamic properties and interfacial characteristics of HfO{sub 2} thin films that were deposited by the direct plasma atomic layer deposition (DPALD) method are investigated. The as-deposited HfO{sub 2} films that were deposited by the DPALD method show crystallization of the HfO{sub 2} layers, which initiates at approximately the 35th cycle (about 2.8 nm) of the DPALD process. Medium-energy ion scattering analysis reveals that the direct O{sub 2} plasma causes a compositional change in the interfacial layer as the process progresses. With an increase in the number of process cycles, the Si content decreases and the O content increases at that position, so that the HfO{sub 2}-like Hf-silicate layer is formed on top of the interfacial layer. The enhanced physical reactivity of the oxygen ions in the direct plasma and the Hf-silicate layer may be the driving forces that accelerate the early crystallization of the HfO{sub 2} layer in the DPALD process in the as-deposited state.

Kim, Inhoe; Kuk, Seoungwoo; Kim, Seokhoon; Kim, Jinwoo; Jeon, Hyeongtag; Cho, M.-H.; Chung, K.-B. [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Korea Research Institute of Standard and Science, Daejeon 305-600 (Korea, Republic of)

2007-05-28T23:59:59.000Z

219

Method for producing a borohydride  

DOE Patents [OSTI]

A method for producing a borohydride is described and which includes the steps of providing a source of borate; providing a material which chemically reduces the source of the borate to produce a borohydride; and reacting the source of borate and the material by supplying heat at a temperature which substantially effects the production of the borohydride.

Kong, Peter C. (Idaho Falls, ID)

2008-09-02T23:59:59.000Z

220

Compression-Induced Open Circuit Voltage Increase in All-Polymer Solar Cells with Lithium Fluoride Nanolayers  

Science Journals Connector (OSTI)

Compression-Induced Open Circuit Voltage Increase in All-Polymer Solar Cells with Lithium Fluoride Nanolayers ... The P3HT polymer (weight-average molecular weight = 50 kDa; polydispersity index = 2.2) was used as received from Rieke Metals (Nebraska, U.S.A.), while the F8BT polymer (weight-average molecular weight = 46 kDa) was supplied from American Dye Sources (Quebec, Canada). ...

Sooyong Lee; Sungho Nam; Hwajeong Kim; Youngkyoo Kim

2013-08-08T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


221

Total ionizing dose effect of ?-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory  

SciTech Connect (OSTI)

The total ionizing dose (TID) effect of gamma-ray (?-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ?5.2 Mrad (HfO{sub 2}) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy ?-ray exposure.

Fang, Runchen; Yu, Shimeng, E-mail: shimengy@asu.edu [School of Computing, Informatics, and Decision Systems Engineering, Arizona State University, Tempe, Arizona 85281 (United States); School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Gonzalez Velo, Yago; Chen, Wenhao; Holbert, Keith E.; Kozicki, Michael N.; Barnaby, Hugh [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States)

2014-05-05T23:59:59.000Z

222

Thermal properties of La2O3-doped ZrB2- and HfB2-based ultra-high temperature ceramics  

Science Journals Connector (OSTI)

Abstract Thermal properties of La2O3-doped ZrB2- and HfB2-based ultra high temperature ceramics (UHTCs) have been measured at temperatures from room temperature to 2000 °C and compared with SiC-doped ZrB2- and HfB2-based \\{UHTCs\\} and monolithic ZrB2 and HfB2. Thermal conductivities of La2O3-doped \\{UHTCs\\} remain constant around 55–60 W/mK from 1500 °C to 1900 °C while SiC-doped \\{UHTCs\\} showed a trend to decreasing values over this range.

E. Zapata-Solvas; D.D. Jayaseelan; P.M. Brown; W.E. Lee

2013-01-01T23:59:59.000Z

223

APPLICATION OF VACUUM SALT DISTILLATION TECHNOLOGY FOR THE REMOVAL OF FLUORIDE AND CHLORIDE FROM LEGACY FISSILE MATERIALS  

SciTech Connect (OSTI)

Between September 2009 and January 2011, the Savannah River National Laboratory (SRNL) and the Savannah River Site (SRS) HB-Line Facility designed, developed, tested, and successfully deployed a production-scale system for the distillation of sodium chloride (NaCl) and potassium chloride (KCl) from plutonium oxide (PuO{sub 2}). Subsequent efforts adapted the vacuum salt distillation (VSD) technology for the removal of chloride and fluoride from less-volatile halide salts at the same process temperature and vacuum. Calcium chloride (CaCl{sub 2}), calcium fluoride (CaF{sub 2}), and plutonium fluoride (PuF{sub 3}) were of particular concern. To enable the use of the same operating conditions for the distillation process, SRNL employed in situ exchange reactions to convert the less-volatile halide salts to compounds that facilitated the distillation of halide without removal of plutonium. SRNL demonstrated the removal of halide from CaCl{sub 2}, CaF{sub 2} and PuF{sub 3} below 1000 C using VSD technology.

Pierce, R.; Peters, T.

2011-11-01T23:59:59.000Z

224

Polar intermetallic compounds of the silicon and arsenic family elements and their ternary hydrides and fluorides  

SciTech Connect (OSTI)

An investigation has been made on the effects of hydrogen and fluoride in the solid state chemistry of alkaline-earth and divalent rare-earth metal pnictide (Pn) and tetrelide (Tt) phases A{sub 5}(Pn,Tt,){sub 3}Z{sub x}, where A = Ca, Sr, Ba, Sm, Eu, Yb; Pn = As, Sb, Bi; Tt = Si, Ge, Sn, Pb and Z = H, F. Several trivalent rare-earth-metal pnictides, RE{sub 5}Pn{sub 3} (RE = Y, La, Gd, Tb, Dy, Ho, Er, Tm) and alkaline-earth-metal trielides, A{sub 5}Tr{sub 3}Z{sub x} (Tr = Ga, In, Tl) have been included in an effort to complete observed structural trends. Two main experimental techniques were followed throughout this work, (a) reactions in absence of hydrogen or under continuous high vacuum, and (b) reactions with binary metal hydrides, AH{sub x}, in closed containers. The results demonstrate that all the phases reported with the {beta}-Yb{sub 5}Sb{sub 3}-type structure in the A{sub 5}Pn{sub 3} systems are hydrogen-stabilized compounds. Reactions in absence of hydrogen lead to compounds with the Mn{sub 5}Si{sub 3}-type structure. The structure type {beta}-Yb{sub 5}Sb{sub 3} (= Ca{sub 5}SB{sub 3}F) was found to be characteristic of ternary systems and inaccurately associated with phases that form in the Y{sub 5}Bi{sub 3}-type. A new series of isomorphous Zintl compounds with the Ca{sub 16}Sb{sub 11}-type structure were prepared and studied as well. All the alkaline-earth-metal tetrelides, A{sub 5}Tt{sub 3}, that crystallize in the Cr{sub 5}B{sub 3}-type structure can be interstitially derivatized by hydrogen or fluoride. Binary and ternary compounds were characterized by Guinier powder patterns, single crystal X-ray and powder neutron diffraction techniques. In an effort to establish property-structure relationships, electrical resistivity and magnetic measurements were performed on selected systems, and the results were explained in terms of the Zintl concepts, aided by extended Hueckel band calculations.

Leon-Escamilla, E.A.

1996-10-17T23:59:59.000Z

225

Cellulase producing microorganism ATCC 55702  

DOE Patents [OSTI]

Bacteria which produce large amounts of cellulase--containing cell-free fermentate have been identified. The original bacterium (ATCC 55703) was genetically altered using nitrosoguanidine (MNNG) treatment to produce the enhanced cellulase producing bacterium (ATCC 55702), which was identified through replicate plating. ATCC 55702 has improved characteristics and qualifies for the degradation of cellulosic waste materials for fuel production, food processing, textile processing, and other industrial applications. ATCC 55702 is an improved bacterial host for genetic manipulations using recombinant DNA techniques, and is less likely to destroy genetic manipulations using standard mutagenesis techniques.

Dees, H. Craig (Lenoir City, TN)

1997-01-01T23:59:59.000Z

226

Microorganisms for producing organic acids  

DOE Patents [OSTI]

Organic acid-producing microorganisms and methods of using same. The organic acid-producing microorganisms comprise modifications that reduce or ablate AcsA activity or AcsA homolog activity. The modifications increase tolerance of the microorganisms to such organic acids as 3-hydroxypropionic acid, acrylic acid, propionic acid, lactic acid, and others. Further modifications to the microorganisms increase production of such organic acids as 3-hydroxypropionic acid, lactate, and others. Methods of producing such organic acids as 3-hydroxypropionic acid, lactate, and others with the modified microorganisms are provided. Methods of using acsA or homologs thereof as counter-selectable markers are also provided.

Pfleger, Brian Frederick; Begemann, Matthew Brett

2014-09-30T23:59:59.000Z

227

Cellulase producing microorganism ATCC 55702  

DOE Patents [OSTI]

Bacteria which produce large amounts of cellulase--containing cell-free fermentate have been identified. The original bacterium (ATCC 55703) was genetically altered using nitrosoguanidine (MNNG) treatment to produce the enhanced cellulase producing bacterium (ATCC 55702), which was identified through replicate plating. ATCC 55702 has improved characteristics and qualifies for the degradation of cellulosic waste materials for fuel production, food processing, textile processing, and other industrial applications. ATCC 55702 is an improved bacterial host for genetic manipulations using recombinant DNA techniques, and is less likely to destroy genetic manipulations using standard mutagenesis techniques. 5 figs.

Dees, H.C.

1997-12-30T23:59:59.000Z

228

Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO{sub 2} and oxygen-deficient silicon centers within the SiO{sub 2}/Si interface  

SciTech Connect (OSTI)

We compare the charging response of rapid thermally annealed (800 and 1000 deg. C) 4 nm thick HfO{sub 2} to as-deposited HfO{sub 2} on Si by measuring the surface potential of the HfO{sub 2} layers after vacuum ultraviolet (VUV) irradiation with 11.6 eV photons. From VUV spectroscopy, we determined all HfO{sub 2} layers show the presence of oxygen-interstitial defects (OIDs). The electronic states of OID in HfO{sub 2} line up in energy with oxygen-deficient Si centers within the SiO{sub 2} interfacial layer. This implies charge exchange between OIDs within HfO{sub 2} and the O-deficient silicon centers within the SiO{sub 2} interfacial layer are very important for controlling the radiation-induced trapped charge in HfO{sub 2} dielectric stacks.

Lauer, J. L.; Shohet, J. L. [Department of Electrical and Computer Engineering and Plasma Processing and Technology Laboratory, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Nishi, Y. [Stanford University, Stanford, California 94305 (United States)

2009-04-20T23:59:59.000Z

229

Producing hydrogen using nuclear energy  

Science Journals Connector (OSTI)

The earliest means of separating hydrogen from water was by electrolysis using electrical energy that usually had been produced by low-efficiency thermodynamic processes. Substitution of thermal energy for electrical energy in high-temperature electrolysis gives a somewhat higher overall efficiency, but significantly complicates the process. Today, the vast majority of hydrogen is produced by steam methane reforming (SMR) followed by a water-shift reaction. A well-designed SMR plant will yield hydrogen having 75â??80% of the energy of the methane used. Recent work in Japan has demonstrated the feasibility of substituting high-temperature heat from a gas-cooled nuclear reactor to replace the heat supplied in SMR by the combustion of methane. Using high-temperature heat from nuclear plants to drive thermochemical processes for producing hydrogen has been studied extensively. Bench-scale tests have been carried out in Japan demonstrating the sulphur-iodine (SI) process to produce hydrogen.

Robert E. Uhrig

2008-01-01T23:59:59.000Z

230

Methods of producing transportation fuel  

DOE Patents [OSTI]

Systems, methods, and heaters for treating a subsurface formation are described herein. At least one method for producing transportation fuel is described herein. The method for producing transportation fuel may include providing formation fluid having a boiling range distribution between -5.degree. C. and 350.degree. C. from a subsurface in situ heat treatment process to a subsurface treatment facility. A liquid stream may be separated from the formation fluid. The separated liquid stream may be hydrotreated and then distilled to produce a distilled stream having a boiling range distribution between 150.degree. C. and 350.degree. C. The distilled liquid stream may be combined with one or more additives to produce transportation fuel.

Nair, Vijay (Katy, TX); Roes, Augustinus Wilhelmus Maria (Houston, TX); Cherrillo, Ralph Anthony (Houston, TX); Bauldreay, Joanna M. (Chester, GB)

2011-12-27T23:59:59.000Z

231

Simultaneous observations of 46. 8-MHz and 430-MHz radar backscatter from HF-induced ionospheric Langmuir turbulence  

SciTech Connect (OSTI)

Simultaneous high-resolution spectra of the upshifted enhanced plasma line were obtained with the 46.8-MHz and 430-MHz Arecibo radars in the presence of HF transmissions at two closely spaced frequencies. The spectra obtained with the 46.8-MHz radar showed two narrow features with positive Doppler shifts equal to the two closely spaced frequencies of the HF transmissions; all the spectral power was contained in those two narrow features. The spectra obtained with the 430-MHz radar showed a single narrow feature with a positive Doppler shift equal to the arithmetic mean of the same two closely spaced frequencies; the spectral power in that narrow feature contained about 3% of the total spectral power. The present results broadly confirm the tentative interpretation of earlier observations with a 46.8-MHz radar at Arecibo. The results also show the fundamental difference in the physical processes leading to the enhanced plasma line spectra observed with the two radars.

Sulzer, M.P. (Arecibo Observatory (Puerto Rico)); Fejer, J.A. (Univ. of California, San Diego, La Jolla (United States))

1991-10-01T23:59:59.000Z

232

Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-{kappa} silicates  

SciTech Connect (OSTI)

Hafnium silicate films were fabricated by RF reactive magnetron sputtering technique. Fine microstructural analyses of the films were performed by means of high-resolution transmission electron microscopy and atom probe tomography. A thermal treatment of as-grown homogeneous films leads to a phase separation process. The formation of SiO{sub 2} and HfO{sub 2} phases as well as pure Si one was revealed. This latter was found to be amorphous Si nanoclusters, distributed uniformly in the film volume. Their mean diameter and density were estimated to be about 2.8 nm and (2.9 {+-} 0.4) x 10{sup 17} Si-ncs/cm{sup 3}, respectively. The mechanism of the decomposition process was proposed. The obtained results pave the way for future microelectronic and photonic applications of Hf-based high-{kappa} dielectrics with embedded Si nanoclusters.

Talbot, E.; Roussel, M.; Genevois, C.; Pareige, P. [Groupe de Physique des Materiaux (GPM), Universite et INSA de Rouen, UMR CNRS 6634, Av. de l'Universite, BP 12, 76801 Saint Etienne du Rouvray (France); Khomenkova, L.; Portier, X.; Gourbilleau, F. [Centre de Recherche sur les Ions, les Materiaux et la Photonique (CIMAP), CEA/CNRS/ENSICAEN/UCBN, 6 Bd. Marechal Juin, 14050 Caen Cedex 4 (France)

2012-05-15T23:59:59.000Z

233

Observation of a P-associated defect in Hf O 2 nanolayers on (100)Si by electron spin resonance  

Science Journals Connector (OSTI)

Electron spin resonance analysis has detected a P-donor related point defect in nanometer-thick Hf O 2 films on (100)Si after annealing in the range of 500 – 900 ° C . Based on the principal g matrix (axial; g ? = 1.9965 ; g ? = 1.9975 ) and hyperfine tensor values ( A 1 = 1425 ± 10 G A 2 = 1245 ± 10 G and A 3 = 1160 ± 10 G ) inferred from consistent K - and Q -band spectrum simulations the center is assigned to a P 2 -type defect—a P substituting a Hf atom—similar to P 2 in silica where the unpaired spin is strongly localized on the P atom. The annealing impact is linked to the onset of crystallization enabling substitutional positioning of the P impurities. The centers may act as detrimental charge trapping sites.

K. Clémer; A. Stesmans; V. V. Afanas’ev

2007-01-01T23:59:59.000Z

234

Effect of strain on the critical parameters of V/sub 2/(Hf, Zr) Laves phase composite superconductors  

SciTech Connect (OSTI)

Strain effects on the critical parameters of composite-processed V/sub 2/(Hf, Zr) Laves phase superconductors have been examined. The critical temperature is found to be insensitive to the strain induced by the thermal differential contraction between the composite components. Critical current versus uniaxial strain curves obtained are completely flat at magnetic fields up to 19 T. It also turns out that the bulk upper critical field shows essentially no sensitivity to uniaxial strain. These results, which are quite different from those reported for A15 compound superconductors, are discussed in terms of the structural insensitivity of the Laves phase superconductor. Fractography suggests that the mechanical properties of V/sub 2/(Hf, Zr) composite conductors may be improved by the grain refinement of component alloys.

Wada, H.; Inoue, K.; Tachikawa, K.; Ekin, J.W.

1982-05-01T23:59:59.000Z

235

Energy-Efficient, High-Color-Rendering LED Lamps Using Oxyfluoride and Fluoride Phosphors  

SciTech Connect (OSTI)

LED lamps using phosphor downconversion can be designed to replace incandescent or halogen sources with a 'warm-white' correlated color temperature (CCT) of 2700-3200 K and a color rendering index (CRI) greater than 90. However, these lamps have efficacies of {approx}70% of standard 'cool-white' LED packages (CCT = 4500-6000 K; CRI = 75-80). In this report, we describe structural and luminescence properties of fluoride and oxyfluoride phosphors, specifically a (Sr,Ca){sub 3}(Al,Si)O{sub 4}(F,O):Ce{sup 3+} yellow-green phosphor and a K{sub 2}TiF{sub 6}:Mn{sup 4+} red phosphor, that can reduce this gap and therefore meet the spectral and efficiency requirements for high-efficacy LED lighting. LED lamps with a warm-white color temperature (3088 K), high CRI (90), and an efficacy of {approx}82 lm/W are demonstrated using these phosphors. This efficacy is {approx}85% of comparable cool-white lamps using typical Y{sub 3}Al{sub 5}O{sub 12}:Ce{sup 3+}-based phosphors, significantly reducing the efficacy gap between warm-white and cool-white LED lamps that use phosphor downconversion.

Setlur, A.; Radkov, E; Henderson, C; Her, J; Srivastava, A; Karkada, N; Kishore, M; Kumar, N; Aesram, D; et al.

2010-01-01T23:59:59.000Z

236

On the Structure and Morphology of Polyvinylidene Fluoride-nanoclay Nanocomposites  

SciTech Connect (OSTI)

Polyvinylidene fluoride (PVDF)-nanoclay nanocomposites were prepared by both solution casting and co-precipitation methods with the nanoclay loading of 1-6 wt%. The structure and morphology of the nanocomposite were investigated by wide angle X-ray diffraction (WAXD), polarized light microscopy and transmission electron microscopy (TEM) techniques. PVDF phase transformation behavior was investigated using differential scanning calorimetry and in situ thermal WAXD. All the three typical nanoclay morphologies, namely, exfoliated, partially intercalated and phase separated morphologies, were observed in the PVDF-nanoclay nanocomposites prepared by different methods. In solution-cast samples, phase separation and intercalation occurred depending upon the organic modifiers while complete exfoliation of the nanoclays was observed in the co-precipitated nanocomposites. Furthermore, unique parallel orientation of the nanoclay layers and polymer film surface was achieved in solution-cast samples. {beta}-form PVDF was observed in all the nanocomposites regardless of the nanoclay morphology and contents. Both crystallization and melting temperatures of PVDF were increased with the addition of nanoclay, possibly due to the formation of the {beta}-form PVDF.

Dillon,D.; Tenneti, K.; Li, C.; Ko, F.; Sics, I.; Hsiao, B.

2006-01-01T23:59:59.000Z

237

First in-beam observation of excited states in {sup 156}{sub 72}Hf{sub 84} using the recoul-decay tagging method  

SciTech Connect (OSTI)

Excited states in the proton rich nuclide {sup 156}{sub 72}Hf{sub 84} were observed for the first time using the {sup 102}({sup 58}Ni, 2p2n){sup 156}Hf reaction at 270 MeV. Gamma rays were detected with the AYEBALL array of Compton suppressed Ge detectors, placed in front of the Fragment Mass Analyzer, and were assigned to individual reaction charmers using the Recoil-Decay Tagging Method. Prompt {gamma}-ray cascades were associated with the alpha decay of both the ground state and the 8{sup +} isomeric state in {sup 156}Hf. The level scheme constructed for {sup 156}Hf is compared with level schemes of lighter even-even N=84 isotones and is discussed within the framework of the Shell Model.

Seweryniak, D.; Ahmad, H.; Amro, D.J. [and others

1996-12-31T23:59:59.000Z

238

Self-assembly of Ni nanocrystals on HfO{sub 2} and N-assisted Ni confinement for nonvolatile memory application  

SciTech Connect (OSTI)

We demonstrate memory property using Ni nanocrystals with mean diameter of 9 nm embedded in HfO{sub 2} high-k dielectric that are formed via a self-assembly process by sputtering and rapid thermal annealing. X-ray photoelectron spectroscopy shows that Ni penetrates into the 5 nm HfO{sub 2} after high temperature annealing above 800 deg. C in N{sub 2}. However, the diffusion is suppressed by N incorporation into HfO{sub 2} by NH{sub 3} annealing. Metal-oxide-semiconductor structures were fabricated with Ni nanocrystals embedded in HfO{sub 2}. An additional counterclockwise hysteresis of 2.1 V due to the charge trapping properties of the Ni nanocrystals was observed from a {+-}5 V sweep during capacitance-voltage electrical measurement.

Tan, Zerlinda; Samanta, S.K.; Yoo, Won Jong; Lee, Sungjoo [Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

2005-01-03T23:59:59.000Z

239

Calculations of the cross sections for the neutron acceleration, slowing down, and capture by the isomer "OmHf  

E-Print Network [OSTI]

Calculations of the cross sections for the neutron acceleration, slowing down, and capture for the isomer lsomHf in the energy range of the incoming neutron from 1keV to 5 MeV. Below 0.7 MeV the energy transferred to the neutron in the collision is positive on the average, i.e., the isomer is acting

Shlyakhter, Ilya

240

Solvated Electrons in Very Small Clusters of Polar Molecules: (HF)(3)(-): art. no. 143001  

SciTech Connect (OSTI)

A cluster of polar molecules can host an excess electron in at least two ways. First, the excess electron can be tethered to the cluster by its interaction with the cluster?s dipole moment. , Second, the electron can localize inside the cluster, bulk analogs being the hydrated and ammoniated electrons. - While the structural reorganization of the cluster, due to attachment of an excess electron, is typically small for dipole-bound electrons (dbe), it is usually quite significant for''solvated electrons'' (se), since the solvation occurs at the expense of breaking of pre-existing hydrogen bonds. The se structures, however, provide more contact interactions between the polar molecules and the excess electron. For these reasons, it is often assumed that dbe's dominate for small polar clusters, whereas large clusters form se's. Here we show that dbe's and se's coexist in as small a cluster as (HF)3-. The stability of these anions with respect to the neutral cluster results not only from the excess electron binding energy but also from favorable entropic effects, which reflect the greater ''floppiness'' of the anionic structures.

Gutowski, Maciej S. (BATTELLE (PACIFIC NW LAB)); Hall, C (Arizona, University Of); Adamowicz, L (Arizona, University Of); Hendricks, J.H. (Johns Hopkins Univ); De Clercq, Helen (Howard University); Lyapustina, S.A. (Johns Hopkins Univ); Nilles, J.M. (Johns Hopkins Univ); Xu, S.J. (Johns Hopkins Univ); Bowen Jr., K.H. (Johns Hopkins Univ)

2001-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Temperature dependent structural, optical and hydrophobic properties of sputtered deposited HfO{sub 2} films  

SciTech Connect (OSTI)

Hafnium oxide being high-k dielectric has been successfully utilized in electronic and optical applications. Being thermodynamically stable and having good mechanical strength, it can be used as a protective coating for outdoor HV insulators which are suffering from surface flashover problem due to contamination. In this paper, we are investigating the effect of substrate temperature on structural, optical and hydrophobic properties of hafnium oxide coating deposited over glass insulators by DC magnetron sputtering. X-ray diffraction is applied to determine the crystalline phase and crystallite size of the film. The morphology of the samples is examined using atomic force microscopy. The optical properties are studied using UV-vis-NIR spectrophotometer. The wettability of the film is investigated using contact angle meter. The thickness is measured using surface profilometer and verified through optical data. The relationship between substrate temperature with grain size, roughness, refractive index, and hydrophobicity is manifested. The maximum contact angle for HfO{sub 2} film was found to be 106° at 400°C.

Dave, V. [Department of Electrical Engineering, IIT Roorkee (India); Institute Instrumentation Centre, IIT Roorkee (India); Dubey, P.; Chandra, R. [Institute Instrumentation Centre, IIT Roorkee (India); Gupta, H. O. [Department of Electrical Engineering, IIT Roorkee (India)

2014-01-28T23:59:59.000Z

242

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack  

SciTech Connect (OSTI)

Metal-oxide-semiconductor capacitors made of the nanocrystalline cadmium selenide nc-CdSe embedded Zr-doped HfO{sub 2} high-k stack on the p-type silicon wafer have been fabricated and studied for their charge trapping, detrapping, and retention characteristics. Both holes and electrons can be trapped to the nanocrystal-embedded dielectric stack depending on the polarity of the applied gate voltage. With the same magnitude of applied gate voltage, the sample can trap more holes than electrons. A small amount of holes are loosely trapped at the nc-CdSe/high-k interface and the remaining holes are strongly trapped to the bulk nanocrystalline CdSe site. Charges trapped to the nanocrystals caused the Coulomb blockade effect in the leakage current vs. voltage curve, which is not observed in the control sample. The addition of the nanocrystals to the dielectric film changed the defect density and the physical thickness, which are reflected on the leakage current and the breakdown voltage. More than half of the originally trapped holes can be retained in the embedded nanocrystals for more than 10 yr. The nanocrystalline CdSe embedded high-k stack is a useful gate dielectric for this nonvolatile memory device.

Lin, Chi-Chou; Kuo, Yue [Thin Film Nano and Microelectronics Research Laboratory, Artie McFerrin Department of Chemical Engineering, Texas A and M University, College Station, Texas 77843-3122 (United States)

2014-02-28T23:59:59.000Z

243

Early (? 4.5 Ga) formation of terrestrial crust: Lu–Hf, ?18O, and Ti thermometry results for Hadean zircons  

Science Journals Connector (OSTI)

Large deviations in ?Hf(T) from bulk silicate Earth seen in > 4 Ga detrital zircons from Jack Hills, Western Australia, have been interpreted as reflecting a major differentiation of the silicate Earth at 4.4 to 4.5 Ga. We have expanded the characterization of 176Hf/177Hf initial ratios (Hf) in Hadean zircons by acquiring a further 116 laser ablation Lu–Hf measurements on 87 grains with ion microprobe 207Pb/206Pb ages up to 4.36 Ga. Most measurements employed concurrent Lu–Hf and 207Pb/206Pb analyses, permitting assessment of the age of the volumetrically larger domain sampled by laser drilling against the spatially more restricted ion microprobe ages. Our new results confirm and extend the earlier observation of significant negative deviations in ?Hf(T) throughout the Hadean, although no positive ?Hf(T) values were documented in this study. Monte Carlo modelling of these data yields an essentially uniform spectrum of model ages between 4.56 and 4.20 Ga for extraction of the zircons' protoliths from a chondritic reservoir. To assess whether the five data plotting close to solar system initial Hf (Hfo) are statistically robust, we derived the error propagation equation for a parameter, ?o, which measures the difference of a sample from Hfo. Our analysis suggests that this limited data is indicative of source sequestration in a crustal-type Lu/Hf environment prior to 4.5 Ga. Oxygen isotope data and Ti thermometry from Hadean zircons show little obvious correlation with Hf, consistent with their derivation through fusion of a broad suite of crustal rock types under water-saturated conditions. Together with other isotopic and trace element data obtained from these ancient zircons, our results indicate essentially continuous derivation of crust from the mantle from 4.5 to 4.2 Ga with concurrent recycling into the mantle and internal crustal re-working. These results represent further evidence that by 4.35 Ga, portions of the crust had taken on continental characteristics.

T. Mark Harrison; Axel K. Schmitt; Malcolm T. McCulloch; Oscar M. Lovera

2008-01-01T23:59:59.000Z

244

Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru  

SciTech Connect (OSTI)

The crystal and electronic structure and energy and kinetic properties of the n-HfNiSn semiconductor heavily doped with a Ru acceptor impurity are investigated in the temperature and Ru concentration ranges T = 80–400 K and N{sub A}{sup Ru} ? 9.5 × 10{sup 19}?5.7 × 10{sup 20} cm{sup ?3} (x = 0–0.03), respectively. The mechanism of structural-defect generation is established, which changes the band gap and degree of compensation of the semiconductor and consists in the simultaneous concentration reduction and elimination of donor structural defects by means of the displacement of ?1% of Ni atoms from the Hf (4a) positions, the generation of acceptor structural defects upon the substitution of Ru atoms for Ni atoms in the 4c positions, and the generation of donor defects in the form of vacancies in the Sn (4b) positions. The calculated electronic structure of HfNi{sub 1?x}Ru{sub x}Sn is consistent with the experiment. The results obtained are discussed within the Shklovsky-Efros model for a heavily doped and compensated semiconductor.

Romaka, V. A., E-mail: vromaka@polynet.lviv.ua [National Academy of Sciences of Ukraine, Pidstrygach Institute for Applied Problems in Mechanics and Mathematics (Ukraine); Rogl, P. [Universität Wien, Institut für Physikalische Chemie (Austria); Romaka, V. V. [National University Lvivska Politekhnika (Ukraine); Stadnyk, Yu. V. [Ivan Franko National University of Lviv (Ukraine); Korzh, R. O.; Krayovskyy, V. Ya. [National University Lvivska Politekhnika (Ukraine); Horyn, A. M. [Ivan Franko National University of Lviv (Ukraine)

2014-12-15T23:59:59.000Z

245

Highly efficient dye-sensitized solar cells based on HfO{sub 2} modified TiO{sub 2} electrodes  

SciTech Connect (OSTI)

Graphical abstract: Display Omitted Highlights: ? HfO{sub 2} has been used to modify TiO{sub 2} electrodes in dye sensitized solar cells. ? HfO{sub 2} layer increases the dye adsorption. ? Diffusion coefficient (D{sub e}) and lifetime (?{sub e}) of the photoelectrons were increased. ? Solar cell efficiency (?) was greatly improved from 5.67 to 9.59%. -- Abstract: In this article, we describe the use of hafnium oxide (HfO{sub 2}) as a new and efficient blocking layer material to modify TiO{sub 2} electrodes in dye sensitized solar cells. Different thicknesses of HfO{sub 2} over-layers were prepared by simple dip coating from two different precursors and their effects on the performance of DSSCs were studied. The HfO{sub 2} modification remarkably increases dye adsorption, resulting from the fact that the surface of HfO{sub 2} is more basic than that of TiO{sub 2}. Furthermore, the HfO{sub 2} coating demonstrated increased diffusion coefficient (D{sub e}) and lifetime (?{sub e}) of the photoelectrons, indicating the improved retardation of the back electron transfer, which increases short-circuit current (J{sub sc}) and open-circuit voltage (V{sub oc}). Thereby, the photo conversion efficiency (?) of the solar cell was greatly improved from 5.67 to 9.59% (an improvement of 69.02%) as the HfO{sub 2} layer was coated over TiO{sub 2} films.

Ramasamy, Parthiban [Department of Chemistry and GETRC, Kongju National University, 182 Singkwan, Kongju, Chungnam 314-701 (Korea, Republic of)] [Department of Chemistry and GETRC, Kongju National University, 182 Singkwan, Kongju, Chungnam 314-701 (Korea, Republic of); Kang, Moon-Sung; Cha, Hyeon-Jung [Department of Environmental Engineering, Sangmyung University, 300 Anseo-dong, Dongnam-gu, Cheonan-si, Chungnam 330-720 (Korea, Republic of)] [Department of Environmental Engineering, Sangmyung University, 300 Anseo-dong, Dongnam-gu, Cheonan-si, Chungnam 330-720 (Korea, Republic of); Kim, Jinkwon, E-mail: jkim@kongju.ac.kr [Department of Chemistry and GETRC, Kongju National University, 182 Singkwan, Kongju, Chungnam 314-701 (Korea, Republic of)] [Department of Chemistry and GETRC, Kongju National University, 182 Singkwan, Kongju, Chungnam 314-701 (Korea, Republic of)

2013-01-15T23:59:59.000Z

246

Thermal stability of Al- and Zr-doped HfO{sub 2} thin films grown by direct current magnetron sputtering  

SciTech Connect (OSTI)

Ultrathin HfO{sub 2} dielectric films doped with Al and Zr were grown on p-type Si(100) substrates by dc magnetron sputtering, and their microstructural and electrical properties were examined. Compositions and chemical states of the dielectric films were analyzed by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The HfO{sub 2} films doped with Zr were crystallized even from the as-deposited state, however, the crystallization temperature of the HfO{sub 2} film doped with 16% Al{sub 2}O{sub 3} was delayed up to 900 deg. C. As the annealing temperature increases, high-resolution transmission electron microscopy analyses of all doped HfO{sub 2} films showed an increase of the interfacial layer thickness due to the diffusion of small partial pressure of oxygen in annealing ambient. Our results also showed that the addition of Al{sub 2}O{sub 3} to 14% is not useful for blocking the oxygen diffusion through the (HfO{sub 2}){sub 0.86}(Al{sub 2}O{sub 3}){sub 0.14} film. From the capacitance-voltage measurements, the dielectric constants of the Al- and Zr-doped HfO{sub 2} thin films were measured to be 18.7 and 7.6, respectively.

Hong, Yeong-Eui; Kim, Yong-Seok; Do, Kihoon; Lee, Dongwon; Ko, Dae-Hong; Ku, Ja-Hum; Kim, Hyoungsub [Department of Ceramic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemoon-Ku, Seoul 120-749 (Korea, Republic of); Semiconductor R and D Division, Samsung Electronics Co, Ltd., San no. 24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711 (Korea, Republic of); Department of Advanced Materials Engineering, Sungkyunkwan University, 300 Chunchun-Dong, Jangan-Ku, Suwon 440-746 (Korea, Republic of)

2005-09-15T23:59:59.000Z

247

Structure and dielectric properties of La{sub x}Hf{sub (1?x)}O{sub y} thin films: The dependence of components  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • La{sub x}Hf{sub (1?x)}O{sub y} thin films were grown by pulse laser deposition method. • The thin film with 10% La/(La + Hf) atom ratio forms a cubic HfO{sub 2} phase. • The amorphous thin films due to more La introduced have almost same local structure. • The main infrared phonon modes move to lower frequency for the amorphous thin films. • The static dielectric constants of the amorphous thin films increase with La content. - Abstract: La{sub x}Hf{sub (1?x)}O{sub y} (x = 0, 0.1, 0.3, 0.5, 0.7, y=2?(1/2)x) thin films were grown by pulsed laser deposition (PLD) method. The component dependence of the structure and vibration properties of these thin films is studied by combining X-ray diffraction, X-ray absorption fine structure (XAFS) and infrared spectroscopy. The thin film with 10% La/(La + Hf) atom ratio forms a cubic HfO{sub 2} phase and it has the largest static dielectric constant. More La atoms introduced cause amorphous phase formed and the static dielectric constants increase with the La content. Although XAFS indicates that these amorphous thin films have almost same local structures, the infrared phonon modes with most contribution to the static dielectric constant move to lower frequency, which results in the component dependence of the dielectric constant.

Qi, Zeming, E-mail: zmqi@ustc.edu.cn [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Cheng, Xuerui [Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou, Henan 450002 (China); Zhang, Guobin [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Li, Tingting [Institute of Microelectronics of Chinese Academy of Science, Beijing 100029 (China); Wang, Yuyin; Shao, Tao; Li, Chengxiang; He, Bo [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China)

2013-07-15T23:59:59.000Z

248

Experimental and theoretical studies on the C15 intermetallic compounds MV{sub 2} (M = Zr, Hf and Ta): Elasticity and phase stability  

SciTech Connect (OSTI)

The phase stability of C15 HfV{sub 2} was studied by specific heat measurements. The elastic constants of C15 HfV{sub 2} were measured by the resonant ultrasound spectroscopy. Total energy and electronic structure of C15 intermetallic compounds MV{sub 2} (M = Zr, Hf and Ta) were calculated using the linear muffin tin orbital (LMTO) method. The band structures at X-point near the Fermi level were used to understand the anomalous shear moduli of the C15 HfV{sub 2} and ZrV{sub 2}. It was found that the double degeneracy with a linear dispersion relation of electronic levels at the x-point near the Fermi surface is mainly responsible for the C15 anomalous elasticity at high temperatures. The densities of states at Fermi level and the geometry of the Fermi surface were used to explain the low temperature phase instability of C15 HfV{sub 2} and ZrV{sub 2} and the stability of C15 TaV{sub 2}. The relationship between the anomalous elasticity and structural instability of C15 HfV{sub 2} and ZrV{sub 2} were also studied.

Chu, F.; Mitchell, T.E.; Chen, S.P. [Los Alamos National Lab., NM (United States); Sob, M.; Siegl, R.; Pope, D.P. [Univ. of Pennsylvania, Philadelphia, PA (United States). Dept. of Materials Science and Engineering

1994-12-01T23:59:59.000Z

249

Diesel exhaust treatment produces cyanide  

Science Journals Connector (OSTI)

Diesel exhaust treatment produces cyanide ... Studies at the Swiss Federal Technical Institute (ETH), Zurich, have produced results that, if confirmed by further research, could pose problems for the developers of catalytic converters that reduce emissions from diesel and leanburn gasoline engines. ... Use of low molecular weight olefins as reductants for selective removal of nitrogen oxides from exhaust gases, either by bleeding the olefins into the exhaust stream or blending them into the fuel itself, has attracted the interest of engine makers and regulatory agencies. ...

JOSEPH HAGGIN

1994-05-02T23:59:59.000Z

250

Process for producing chalcogenide semiconductors  

DOE Patents [OSTI]

A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

Noufi, R.; Chen, Y.W.

1985-04-30T23:59:59.000Z

251

Additive manufacturing method of producing  

E-Print Network [OSTI]

Additive manufacturing method of producing silver or copper tracks on polyimide film Problem/stripping) using an additive process support by a novel bio- degradable photo-initiator package. technology. Building on previous work by Hoyd- Gigg Ng et al. [1,2], Heriot-Watt has developed an additive film

Painter, Kevin

252

Electrically Conductive Bacterial Nanowires Produced by Shewanella...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Conductive Bacterial Nanowires Produced by Shewanella Oneidensis Strain MR-1 and Other Microorganisms . Electrically Conductive Bacterial Nanowires Produced by Shewanella...

253

Preliminary requirements for a Fluoride Salt-Cooled High-Temperature Test Reactor (FHTR)  

SciTech Connect (OSTI)

A Fluoride Salt-Cooled High-Temperature Test Reactor (FHTR) design is being developed at MIT to provide the first demonstration and test of a salt-cooled reactor using high-temperature fuel. The first step is to define the requirements. The top level requirements are (1) provide the confidence that a larger demonstration reactor is warranted and (2) develop the necessary data for a larger-scale reactor. Because requirements will drive the design of the FHTR, a significant effort is being undertaken to define requirements and understand the tradeoffs that will be required for a practical design. The preliminary requirements include specifications for design parameters and necessary tests of major reactor systems. Testing requirements include demonstration of components, systems, and procedures for refueling, instrumentation, salt temperature control to avoid coolant freezing, salt chemistry and volume control, tritium monitoring and control, and in-service inspection. Safety tests include thermal hydraulics, neutronics - including intrinsic core shutdown mechanisms such as Doppler feedback - and decay heat removal systems. Materials and coolant testing includes fuels (including mechanical wear and fatigue) and system corrosion behavior. Preliminary analysis indicates a thermal power output below 30 MW, an initial core using pebble-bed or prismatic-block fuel, peak outlet temperatures of at least 700 deg. C, and use of FLi{sup 7}Be ({sup 7}LiF-BeF{sub 2}) coolant. The option to change-out the reactor core, fuel type, and major components is being investigated. While the FHTR will be used for materials testing, its primary mission is as a reactor system performance test to enable the design and licensing of a FHR demonstration power reactor. (authors)

Massie, M.; Forsberg, C.; Forget, B. [Dept. of Nuclear Science and Engineering, Massachusetts Inst. of Technology, Cambridge, MA 02139 (United States); Hu, L. W. [Nuclear Reactor Laboratory, Massachusetts Inst. of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States)

2012-07-01T23:59:59.000Z

254

IUPAC-NIST Solubility Data Series. 100. Rare Earth Metal Fluorides in Water and Aqueous Systems. Part 1. Scandium Group (Sc, Y, La)  

SciTech Connect (OSTI)

This work presents an assessment of solubility data for rare earth metal fluorides (generally of trivalent metals and of CeF{sub 4}) in water and in aqueous ternary systems. Compilations of all available experimental data are introduced for each rare earth metal fluoride with a corresponding critical evaluation. Every such evaluation contains a collection of all solubility results in water, a selection of suggested solubility data, and a brief discussion of the multicomponent systems. Because the ternary systems were seldom studied more than once, no critical evaluations of such data were possible. Only simple fluorides (no complexes or binary salts) are treated as the input substances in this report. The literature has been covered through the end of 2013.

Mioduski, Tomasz [Institute of Nuclear Chemistry and Technology, 03195 Warsaw (Poland); Gumi?ski, Cezary, E-mail: cegie@chem.uw.edu.pl [Department of Chemistry, University of Warsaw, 02093 Warsaw (Poland); Zeng, Dewen, E-mail: dewen-zeng@hotmail.com [College of Chemistry and Chemical Engineering, Central South University, 410083 Changsha (China)

2014-03-15T23:59:59.000Z

255

Radiotracers currently produced at Brookhaven  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Radiotracers currently produced at Brookhaven. Note that other radiotracers that are described in the literature can Radiotracers currently produced at Brookhaven. Note that other radiotracers that are described in the literature can also be transferred to our laboratory. Molecular Target/use Radiotracer Name Structure Chemical Name Hexokinase/glucose metabolism, cancer, brain function 18 FDG 2-deoxy-2-[ 18 F]fluoro-D-glucose Dopamine D2/D3 receptors/addiction, psychiatric disorders [ 11 C]raclopride 3,5-dichloro-N-{[(2S)-1-ethylpyrrolidin- 2-yl]methyl}-2-hydroxy-6- [ 11 C]methoxybenzamide Dopamine transporters / cocaine pharmacokinetics, addiction, neurological disorders [ 11 C]cocaine methyl (1R,2R,3S,5S)-3-s(benzoyloxy)- 8-[ 11 C]methyl-8-azabicyclo[3.2.1] octane-2-carboxylate Blood flow/nicotine pharmacokinetics [ 11 C]nicotine 3-[(2S)-1-[ 11 C]methylpyrrolidin-2-

256

Partial oxidation process for producing a stream of hot purified gas  

DOE Patents [OSTI]

A partial oxidation process for the production of a stream of hot clean gas substantially free from particulate matter, ammonia, alkali metal compounds, halides and sulfur-containing gas for use as synthesis gas, reducing gas, or fuel gas. A hydrocarbonaceous fuel comprising a solid carbonaceous fuel with or without liquid hydrocarbonaceous fuel or gaseous hydrocarbon fuel, wherein said hydrocarbonaceous fuel contains halides, alkali metal compounds, sulfur, nitrogen and inorganic ash containing components, is reacted in a gasifier by partial oxidation to produce a hot raw gas stream comprising H.sub.2, CO, CO.sub.2, H.sub.2 O, CH.sub.4, NH.sub.3, HCl, HF, H.sub.2 S, COS, N.sub.2, Ar, particulate matter, vapor phase alkali metal compounds, and molten slag. The hot raw gas stream from the gasifier is split into two streams which are separately deslagged, cleaned and recombined. Ammonia in the gas mixture is catalytically disproportionated into N.sub.2 and H.sub.2. The ammonia-free gas stream is then cooled and halides in the gas stream are reacted with a supplementary alkali metal compound to remove HCl and HF. Alkali metal halides, vaporized alkali metal compounds and residual fine particulate matter are removed from the gas stream by further cooling and filtering. The sulfur-containing gases in the process gas stream are then reacted at high temperature with a regenerable sulfur-reactive mixed metal oxide sulfur sorbent material to produce a sulfided sorbent material which is then separated from the hot clean purified gas stream having a temperature of at least 1000.degree. F.

Leininger, Thomas F. (Chino Hills, CA); Robin, Allen M. (Anaheim, CA); Wolfenbarger, James K. (Torrance, CA); Suggitt, Robert M. (Wappingers Falls, NY)

1995-01-01T23:59:59.000Z

257

Thermal response of Ru electrodes in contact with SiO{sub 2} and Hf-based high-k gate dielectrics  

SciTech Connect (OSTI)

A systematic experimental evaluation of the thermal stability of Ru metal gate electrodes in direct contact with SiO{sub 2} and Hf-based dielectric layers was performed and correlated with electrical device measurements. The distinctly different interfacial reactions in the Ru/SiO{sub 2}, Ru/HfO{sub 2}, and Ru/HfSiO{sub x} film systems were observed through cross-sectional high-resolution transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy with electron-energy-loss spectra, and energy dispersive x-ray spectra analysis. Ru interacted with SiO{sub 2}, but remained stable on HfO{sub 2} at 1000 deg. C. The onset of Ru/SiO{sub 2} interfacial interactions is identified via silicon substrate pitting possibly from Ru diffusion into the dielectric in samples exposed to a 900 deg. C/10-s anneal. The dependence of capacitor device degradation with decreasing SiO{sub 2} thickness suggests Ru diffuses through SiO{sub 2}, followed by an abrupt, rapid, nonuniform interaction of ruthenium silicide as Ru contacts the Si substrate. Local interdiffusion detected on Ru/HfSiO{sub x} samples may be due to phase separation of HfSiO{sub x} into HfO{sub 2} grains within a SiO{sub 2} matrix, suggesting that SiO{sub 2} provides a diffusion pathway for Ru. Detailed evidence consistent with a dual reaction mechanism for the Ru/SiO{sub 2} system at 1000 deg. C is presented.

Wen, H.-C.; Lysaght, P.; Alshareef, H.N.; Huffman, C.; Harris, H.R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B.H.; Campin, M. J.; Foran, B.; Lian, G.D.; Kwong, D.-L. [SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741(United States); University of Texas at Austin, Pickle Research Campus-Microelectronics and Engineering Research (PRC-MER) Building 2.606A/R9950, Austin, Texas 78712 (United States); SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 (United States); Advanced Technology Development Facility (ATDF) Inc., 2706 Montopolis Drive, Austin, Texas 78741 (United States); University of Texas at Austin, Pickle Research Campus-Microelectronics and Engineering Research (PRC-MER) Building 2.606A/R9950, Austin, Texas 78712 (United States)

2005-08-15T23:59:59.000Z

258

Page not found | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

61 - 18370 of 26,764 results. 61 - 18370 of 26,764 results. Page EIS-0359: Uranium Hexafluoride Conversion Facility at the Paducah, Kentucky Site This site-specific EIS considers the construction, operation, maintenance, and decontamination and decommissioning of the proposed depleted uranium hexafluoride (DUF6) conversion facility at three locations within the Paducah site; transportation of depleted uranium conversion products and waste materials to a disposal facility; transportation and sale of the hydrogen fluoride (HF) produced as a conversion co-product; and neutralization of HF to calcium fluoride and its sale or disposal in the event that the HF product is not sold. http://energy.gov/nepa/eis-0359-uranium-hexafluoride-conversion-facility-paducah-kentucky-site Page EIS-0393: Montanore Project, Montana

259

EIS-0359: Uranium Hexafluoride Conversion Facility at the Paducah, Kentucky  

Broader source: Energy.gov (indexed) [DOE]

59: Uranium Hexafluoride Conversion Facility at the Paducah, 59: Uranium Hexafluoride Conversion Facility at the Paducah, Kentucky Site EIS-0359: Uranium Hexafluoride Conversion Facility at the Paducah, Kentucky Site Summary This site-specific EIS considers the construction, operation, maintenance, and decontamination and decommissioning of the proposed depleted uranium hexafluoride (DUF6) conversion facility at three locations within the Paducah site; transportation of depleted uranium conversion products and waste materials to a disposal facility; transportation and sale of the hydrogen fluoride (HF) produced as a conversion co-product; and neutralization of HF to calcium fluoride and its sale or disposal in the event that the HF product is not sold. This EIS also considers a no action alternative that assumes continued storage of DUF6 at the Paducah site. A

260

High-pressure synthesis and characterization of the first cerium fluoride borate CeB{sub 2}O{sub 4}F  

SciTech Connect (OSTI)

CeB{sub 2}O{sub 4}F is the first cerium fluoride borate, which is exclusively built up of one-dimensional, infinite chains of condensed trigonal-planar [BO{sub 3}]{sup 3?} groups. This new cerium fluoride borate was synthesized under high-pressure/high-temperature conditions of 0.9 GPa and 1450 °C in a Walker-type multianvil apparatus. The compound crystallizes in the orthorhombic space group Pbca (No. 61) with eight formula units and the lattice parameters a=821.63(5), b=1257.50(9), c=726.71(6) pm, V=750.84(9) Å{sup 3}, R{sub 1}=0.0698, and wR{sub 2}=0.0682 (all data). The structure exhibits a 9+1 coordinated cerium ion, one three-fold coordinated fluoride ion and a one-dimensional chain of [BO{sub 3}]{sup 3?} groups. Furthermore, IR spectroscopy, Electron Micro Probe Analysis and temperature-dependent X-ray powder diffraction measurements were performed. - Graphical abstract: A new rare-earth fluoride borate CeB{sub 2}O{sub 4}F could be synthesized under high-pressure/high-temperature conditions of 0.9 °GPa and 1450 °Cin a Walker-type multianvil apparatus. The crystal structure represents a new structure type in the class of rare-earth fluoride borates. The structure exhibits a 9+1 coordinated cerium ion, one three-fold coordinated fluoride ion and a one-dimensional chain of [BO{sub 3}]{sup 3?} groups. A closer view on the ac-plane shows an interesting wave-like modulation of the borate chains. Highlights: • CeB{sub 2}O{sub 4}F is the first fluoride borate exclusively built up of one-dimensional, infinite chains of condensed trigonal-planar [BO{sub 3}]{sup 3?} groups. • CeB{sub 2}O{sub 4}F is the first cerium fluoride borate. • High-pressure conditions were necessary to synthesize CeB{sub 2}O{sub 4}F.

Hinteregger, Ernst; Wurst, Klaus [Institut für Allgemeine, Anorganische und Theoretische Chemie, Leopold-Franzens-Universität Innsbruck, Innrain 80-82, A-6020 Innsbruck (Austria); Tribus, Martina [Institut für Mineralogie und Petrographie, Leopold-Franzens-Universität Innsbruck, Innrain 52 f, A-6020 Innsbruck (Austria); Huppertz, Hubert, E-mail: hubert.huppertz@uibk.ac.at [Institut für Allgemeine, Anorganische und Theoretische Chemie, Leopold-Franzens-Universität Innsbruck, Innrain 80-82, A-6020 Innsbruck (Austria)

2013-08-15T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Investigations of the g{sub K}-factors in the {sup 175,177,179}Hf Isotopes  

SciTech Connect (OSTI)

In this paper the intrinsic g{sub K} and effective spin g{sub s} factors of the odd-mass {sup 175-179}Hf isotopes have been investigated within the Tamm-Dancoff approximation by using the realistic Saxon-Woods potential. The theoretically calculated g{sub K} and g{sub s}{sup eff} values are compared with experimental data. The comparison of the measured and calculated values of the effective g{sub s} factor shows that the spin polarization explains quite well the observed reduction of g{sub s} from its free-nucleon value.

Yakut, Hakan; Kuliev, Ali [Sakarya University, Department of physics, Sakarya (Turkey); Guliyev, Ekber [National Academy of Sciences, Institute of Physics, Baku (Azerbaijan)

2008-11-11T23:59:59.000Z

262

Transient phenomena in the dielectric breakdown of HfO{sub 2} optical films probed by ultrafast laser pulse pairs  

SciTech Connect (OSTI)

The laser induced breakdown threshold of HfO{sub 2} films is studied with single pairs of pulses of variable delay and 50 fs and 1 ps pulse duration. Two distinct transient regimes are observed that can be related to the relaxation of the electron density from the conduction band via an intermediate state to the valence band. The experimental results are in good agreement with a theoretical model that assumes occupation of mid gap states after the first pulse on a time scale of several tens of picoseconds and subsequent decay of this population via recombination with holes in the valence band on a time scale of several tens of milliseconds.

Nguyen, Duy N.; Emmert, Luke A.; Rudolph, Wolfgang [Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Patel, Dinesh; Menoni, Carmen S. [Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, Colorado 80523 (United States)

2010-11-08T23:59:59.000Z

263

Two-Dimensional Polaronic Behavior in the Binary Oxides m-HfO2 and m-ZrO2  

SciTech Connect (OSTI)

We demonstrate that the three-dimensional (3D) binary monoclinic oxides HfO{sub 2} and ZrO{sub 2} exhibit quasi-2D polaron localization and conductivity, which results from a small difference in the coordination of two oxygen sublattices in these materials. The transition between a 2D large polaron into a zero-dimensional small polaron state requires overcoming a small energetic barrier. These results demonstrate how a small asymmetry in the lattice structure can determine the qualitative character of polaron localization and significantly broaden the realm of quasi-2D polaron systems.

McKenna, K. P.; Wolf, M. J.; Shluger, A. L.; Lany, S.; Zunger, A.

2012-03-16T23:59:59.000Z

264

Controlled oxygen vacancy induced p-type conductivity in HfO{sub 2-x} thin films  

SciTech Connect (OSTI)

We have synthesized highly oxygen deficient HfO{sub 2-x} thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 10{sup 21} charge carriers per cm{sup 3}. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.

Hildebrandt, Erwin; Kurian, Jose; Mueller, Mathis M.; Kleebe, Hans-Joachim; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany); Schroeder, Thomas [IHP, 15236 Frankfurt/Oder (Germany)

2011-09-12T23:59:59.000Z

265

Room temperature strain rate sensitivity in precursor derived HfO{sub 2}/Si-C-N(O) ceramic nanocomposites  

SciTech Connect (OSTI)

Investigation on the room temperature strain rate sensitivity using depth sensing nanoindentation is carried out on precursor derived HfO{sub 2}/Si-C-N(O) ceramic nanocomposite sintered using pulsed electric current sintering. Using constant load method the strain rate sensitivity values are estimated. Lower strain rate sensitivity of ? 3.7 × 10{sup ?3} is observed and the limited strain rate sensitivity of these ceramic nanocomposites is explained in terms of cluster model. It is concluded that presence of amorphous Si-C-N(O) clusters are responsible for the limited flowability in these ceramics.

Sujith, Ravindran; Kumar, Ravi, E-mail: nvrk@iitm.ac.in [Materials Processing Section, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai-600036, India. (India)] [Materials Processing Section, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai-600036, India. (India)

2014-01-15T23:59:59.000Z

266

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO{sub 2{+-}x}  

SciTech Connect (OSTI)

We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO{sub 2{+-}x} grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (111) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany)

2012-12-01T23:59:59.000Z

267

Energy band alignment of atomic layer deposited HfO{sub 2} on epitaxial (110)Ge grown by molecular beam epitaxy  

SciTech Connect (OSTI)

The band alignment properties of atomic layer HfO{sub 2} film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO{sub 2} film. The measured valence band offset value of HfO{sub 2} relative to (110)Ge was 2.28 {+-} 0.05 eV. The extracted conduction band offset value was 2.66 {+-} 0.1 eV using the bandgaps of HfO{sub 2} of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO{sub 2}/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

268

Photo-induced tunneling currents in MOS structures with various HfO{sub 2}/SiO{sub 2} stacking dielectrics  

SciTech Connect (OSTI)

In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO{sub 2}/Si (S), Al/HfO{sub 2}/SiO{sub 2}/Si (H), and Al/3HfO{sub 2}/SiO{sub 2}/Si (3H) were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V) measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO{sub 2} dielectric layer, which leads to larger numbers of carriers crowded through the sweep of V{sub G} before the domination of tunneling current. Additionally, the HfO{sub 2} dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e{sup ?}-h{sup +}) pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO{sub 2} stacking layers are importance to MOS(p) tunneling photo diodes.

Pang, Chin-Sheng; Hwu, Jenn-Gwo, E-mail: jghwu@ntu.edu.tw [Graduate Institute of Electronics Engineering/Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China)] [Graduate Institute of Electronics Engineering/Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China)

2014-04-15T23:59:59.000Z

269

Vortex Diode Analysis and Testing for Fluoride Salt-Cooled High-Temperature Reactors  

SciTech Connect (OSTI)

Fluidic diodes are presently being considered for use in several fluoride salt-cooled high-temperature reactor designs. A fluidic diode is a passive device that acts as a leaky check valve. These devices are installed in emergency heat removal systems that are designed to passively remove reactor decay heat using natural circulation. The direct reactor auxiliary cooling system (DRACS) uses DRACS salt-to-salt heat exchangers (DHXs) that operate in a path parallel to the core flow. Because of this geometry, under normal operating conditions some flow bypasses the core and flows through the DHX. A flow diode, operating in reverse direction, is-used to minimize this flow when the primary coolant pumps are in operation, while allowing forward flow through the DHX under natural circulation conditions. The DRACSs reject the core decay heat to the environment under loss-of-flow accident conditions and as such are a reactor safety feature. Fluidic diodes have not previously been used in an operating reactor system, and therefore their characteristics must be quantified to ensure successful operation. This report parametrically examines multiple design parameters of a vortex-type fluidic diode to determine the size of diode needed to reject a particular amount of decay heat. Additional calculations were performed to size a scaled diode that could be tested in the Oak Ridge National Laboratory Liquid Salt Flow Loop. These parametric studies have shown that a 152.4 mm diode could be used as a test article in that facility. A design for this diode is developed, and changes to the loop that will be necessary to test the diode are discussed. Initial testing of a scaled flow diode has been carried out in a water loop. The 150 mm diode design discussed above was modified to improve performance, and the final design tested was a 171.45 mm diameter vortex diode. The results of this testing indicate that diodicities of about 20 can be obtained for diodes of this size. Experimental results show similar trends as the computational fluid dynamics (CFD) results presented in this report; however, some differences exist that will need to be assessed in future studies. The results of this testing will be used to improve the diode design to be tested in the liquid salt loop system.

Yoder Jr, Graydon L [ORNL; Elkassabgi, Yousri M. [Texas A& M University, Kingsville; De Leon, Gerardo I. [Texas A& M University, Kingsville; Fetterly, Caitlin N. [Texas A& M University, Kingsville; Ramos, Jorge A. [Texas A& M University, Kingsville; Cunningham, Richard Burns [University of Tennessee, Knoxville (UTK)

2012-02-01T23:59:59.000Z

270

Number of Producing Gas Wells  

U.S. Energy Information Administration (EIA) Indexed Site

Producing Gas Wells Producing Gas Wells Period: Annual Download Series History Download Series History Definitions, Sources & Notes Definitions, Sources & Notes Area 2007 2008 2009 2010 2011 2012 View History U.S. 452,945 476,652 493,100 487,627 514,637 482,822 1989-2012 Alabama 6,591 6,860 6,913 7,026 7,063 6,327 1989-2012 Alaska 239 261 261 269 277 185 1989-2012 Arizona 7 6 6 5 5 5 1989-2012 Arkansas 4,773 5,592 6,314 7,397 8,388 8,538 1989-2012 California 1,540 1,645 1,643 1,580 1,308 1,423 1989-2012 Colorado 22,949 25,716 27,021 28,813 30,101 32,000 1989-2012 Gulf of Mexico 2,552 1,527 1,984 1,852 1,559 1,474 1998-2012 Illinois 43 45 51 50 40 40 1989-2012 Indiana 2,350 525 563 620 914 819 1989-2012 Kansas

271

Neutron capture cross sections of /sup 178/,/sup 179/,/sup 180/Hf and the origin of nature's rarest stable isotope /sup 180/Ta  

SciTech Connect (OSTI)

The neutron capture cross sections of /sup 178/,/sup 179/,/sup 180/Hf were measured in the energy range 2.6 keV to 2 MeV. The average capture cross sections were derived and fitted in terms of strength functions. Resonance parameters for the observed resonances below 10 keV were determined by shape analysis. Maxwellian-averaged capture cross sections were computed for thermal energies with kT between 5 and 100 keV. The cross sections for kT = 30 keV were used to determine the population probability of the 8- isomeric level in /sup 180/Hf by neutron capture as (1.24 +- 0.06)% and the r-process abundance of /sup 180/Hf as 0.0290 (Si = 10/sup 6/). These quantities served to analyze s- and r-process nucleosynthesis of /sup 180/Ta, nature's rarest stable isotope.

Beer, H.; Macklin, R.L.

1982-01-01T23:59:59.000Z

272

Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces  

SciTech Connect (OSTI)

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200?°C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSb surfaces was observed.

Miyata, Noriyuki, E-mail: nori.miyata@aist.go.jp; Mori, Takahiro; Yasuda, Tetsuji [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ohtake, Akihiro [National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Ichikawa, Masakazu [The University of Tokyo, Tokyo 113-8656 (Japan)

2014-06-09T23:59:59.000Z

273

Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO{sub 2} capacitors treated by N{sub 2}-plasma  

SciTech Connect (OSTI)

The nitrogen incorporation into the HfO{sub 2} films with an EOT (equivalent oxide thickness) of 9 A was performed by N{sub 2}-plasma to improve the electrical properties. The dielectric properties and a leakage current characteristics of the capacitors were investigated as a function of plasma power and plasma treatment temperature. The dielectric constant of the capacitors is not influenced by nitrogen incorporation. The N{sub 2}-plasma treatment at 300 deg. C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. Leakage current density of the capacitors treated at 300 deg. C and 70 W exhibits a half order of magnitude lower than that without plasma treatment. Nitrogen incorporated into the HfO{sub 2} films possesses the intrinsic effect that drastically reduce the electron leakage current through HfO{sub 2} dielectrics by deactivating the V{sub O} (oxygen vacancy) related gap states.

Seong, Nak-Jin; Yoon, Soon-Gil; Yeom, Seung-Jin; Woo, Hyun-Kyung; Kil, Deok-Sin; Roh, Jae-Sung; Sohn, Hyun-Chul [Department of Materials Science and Engineering, Chungnam National University, Daeduk Science Town, 305-764, Daejon (Korea, Republic of); Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Icheon-si Kyoungki-do, 467-701 (Korea, Republic of)

2005-09-26T23:59:59.000Z

274

Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density  

SciTech Connect (OSTI)

In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup ?4} A/cm{sup ?2}. The D{sub it} value of smaller than 10{sup 12} eV{sup ?1}cm{sup ?2} has been obtained using conduction method.

Trinh, Hai-Dang [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)] [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Wang, Shin-Yuan [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)] [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China); Yi Chang, Edward [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)

2013-09-30T23:59:59.000Z

275

Band alignment and interfacial structure of ZnO/Si heterojunction with Al{sub 2}O{sub 3} and HfO{sub 2} as interlayers  

SciTech Connect (OSTI)

Energy band alignment of ZnO/Si heterojunction with thin interlayers Al{sub 2}O{sub 3} and HfO{sub 2} grown by atomic layer deposition has been studied using x-ray photoelectron spectroscopy. The valence band offsets of ZnO/Al{sub 2}O{sub 3} and ZnO/HfO{sub 2} heterojunctions have been determined to be 0.43 and 0.22?eV, respectively. Accordingly, the band alignment ZnO/Si heterojunction is then modified to be 0.34 and 0.50?eV through inserting a thin Al{sub 2}O{sub 3} and HfO{sub 2} layer, respectively. The feasibility to tune the band structure of ZnO/Si heterojunction by selecting a proper interlayer shows great advantage in improving the performance of the ZnO-based optoelectronic devices.

Lu, Hong-Liang, E-mail: honglianglu@fudan.edu.cn; Yang, Ming; Xie, Zhang-Yi; Geng, Yang; Zhang, Yuan; Wang, Peng-Fei; Sun, Qing-Qing; Ding, Shi-Jin; Wei Zhang, David [State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433 (China)

2014-04-21T23:59:59.000Z

276

Thickness-modulated optical dielectric constants and band alignments of HfO{sub x}N{sub y} gate dielectrics  

SciTech Connect (OSTI)

Thickness-modulated optical dielectric constants and band alignments of HfO{sub x}N{sub y} films grown by sputtering have been investigated by spectroscopic ellipsometry (SE) and x-ray photoelectron spectroscopy. Based on SE measurements, it has been noted that an increase in optical dielectric constant and band gap has been observed as a function of the film thickness. Analyses of thickness-dependent band alignment of the HfO{sub x}N{sub y}/Si system indicate that the valence band offset increases, but only slight change in the conduction band offset, resulting from the thickness-induced change in the structure. The suitable optical dielectric constants and band offsets relative to Si make sputtering-derived HfO{sub x}N{sub y} film a promising candidate for high-k gate dielectrics.

He, G.; Zhang, L. D.; Liu, M.; Zhang, J. P.; Wang, X. J. [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Zhen, C. M. [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050016 (China)

2009-01-01T23:59:59.000Z

277

Influence of trimethylaluminum on the growth and properties of HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As interfaces  

SciTech Connect (OSTI)

The growth and the electrical properties of HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As interfaces are characterized as a function of exposure to trimethylaluminum (TMA) prior to chemical beam deposition of HfO{sub 2} from an alkoxide precursor. It is shown that TMA can act as a surfactant for HfO{sub 2} growth for (2x4) but not for the group-III-rich (4x2) reconstructed surfaces. The Fermi-level can be unpinned by postdeposition forming gas anneals only for interfaces that were exposed to low doses of TMA at low temperatures. The results are discussed in the context of the interaction between TMA and III-V surfaces.

Hwang, Yoontae; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Engel-Herbert, Roman [Department of Materials Science and Engineering, Pennsylvania State University, University Park Pennsylvania 16802 (United States)

2011-01-31T23:59:59.000Z

278

The effect of nanocrystallite size in monoclinic HfO{sub 2} films on lattice expansion and near-edge optical absorption  

SciTech Connect (OSTI)

Nanocrystalline monoclinic HfO{sub 2} films were sputter deposited on fused silica substrates, air annealed at 573 to 1273 K to affect crystallite growth, and analyzed by x-ray diffraction and spectrophotometry. Lattice expansion occurs with diminishing crystallite size. O 2p->Hf 5d interband absorption dominates the optical edge at energy E>=6.24 eV, with an optical band gap, E{sub o}=5.48+-0.023, which is independent of crystallite size. However, the strength of a localized resonant band, with onset at 5.65 eV and maximum at 5.94 eV, is affected by crystallite size. Its polaronic origin in a perfect HfO{sub 2} lattice is discussed.

Cisneros-Morales, M. C.; Aita, C. R. [Department of Chemistry and Biochemistry and the Advanced Coatings Experimental Laboratory, University of Wisconsin-Milwaukee, P.O. Box 413, Milwaukee, Wisconsin 53201 (United States)

2010-05-10T23:59:59.000Z

279

In situ photoemission spectroscopy study on formation of HfO{sub 2} dielectrics on epitaxial graphene on SiC substrate  

SciTech Connect (OSTI)

High quality HfO{sub 2} dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO{sub 2}/graphene/4H-SiC heterojunctions have good thermal stability up to 650 deg. C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO{sub 2} and graphene indicate that high-k dielectric grown on graphene is very promising for the development of graphene-based electronic devices.

Chen, Q.; Huang, H.; Chen, W.; Wee, A. T. S.; Feng, Y. P. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Chai, J. W.; Zhang, Z.; Pan, J. S.; Wang, S. J. [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore 117602 (Singapore)

2010-02-15T23:59:59.000Z

280

Preparation of binderless nanopore-isotropic graphite for inhibiting the liquid fluoride salt and Xe135 penetration for molten salt nuclear reactor  

Science Journals Connector (OSTI)

Abstract Mesocarbon microbeads and the isostatic pressing method were used to prepare binderless nanopore-isotropic graphite (NPIG) as a neutron moderator and reflector, to inhibit liquid fluoride salt and Xe135 penetration during use in a molten salt nuclear reactor. The microstructure, thermophysical, and other properties of the NPIG were studied and compared with isostatic graphite (IG-110, TOYO TANSO CO., Ltd., Japan). A high-pressure reactor and a vacuum device were constructed to evaluate the molten salt and Xe135 penetration in the graphite, respectively. The results indicated that NPIG possessed a graphitization degree of 74% and excellent properties such as a high bending strength of 94.1 ± 2.5 MPa, a high compressive strength of 230 ± 3 MPa, a low porosity of 8.7%, and an average pore diameter of 69 nm. The fluoride salt occupation of IG-110 was 13.5 wt% under 1.5 atm, whereas the salt gain in NPIG remained steady even up to 10 atm with an increase of <0.06 wt%, demonstrating that the graphite could inhibit the liquid fluoride salt infiltration effectively. The helium diffusion coefficient for NPIG was 8.76 × 10?5 cm2/s, much less than 1.21 × 10?2 cm2/s for IG-110. The NPIG could effectively inhibit liquid fluoride salt and Xe135 penetration.

Jinliang Song; Yanling Zhao; Junpeng Zhang; Xiujie He; Baoliang Zhang; Pengfei Lian; Zhanjun Liu; Dongsheng Zhang; Zhoutong He; Lina Gao; Huihao Xia; Xingtai Zhou; Ping Huai; Quangui Guo; Lang Liu

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Leucoagaricus gongylophorus Produces Diverse Enzymes for the...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Leucoagaricus gongylophorus Produces Diverse Enzymes for the Degradation of Recalcitrant Plant Polymers in Leaf-Cutter Ant Leucoagaricus gongylophorus Produces Diverse Enzymes for...

282

Characterization of uraninite nanoparticles produced by Shewanella...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

uraninite nanoparticles produced by Shewanella oneidensis MR-1 . Characterization of uraninite nanoparticles produced by Shewanella oneidensis MR-1 . Abstract: The reduction of...

283

Local structure around Er{sup 3+} in SiO{sub 2}-HfO{sub 2} glassy waveguides using EXAFS  

SciTech Connect (OSTI)

Er{sup 3+}-doped SiO{sub 2}-HfO{sub 2} glassy waveguides with HfO{sub 2} concentrations ranging from 10 to 50 mol % were prepared using the sol-gel route and deposited on v-SiO{sub 2} substrates using the dip-coating technique. The local environment around Er{sup 3+} ions was determined from Er L{sub 3}-edge extended x-ray-absorption fine-structure (EXAFS) measurements. The first coordination shell around Er{sup 3+} ions is composed of oxygen atoms. Hafnium is the main constituent of the second coordination shell of Er{sup 3+}, differing from the cases of pure SiO{sub 2} and SiO{sub 2}-TiO{sub 2} glassy hosts, in which silicon is the main atomic species. The local structure around Er{sup 3+} ions has been found to be independent on HfO{sub 2} concentration within the studied composition range. This fact implies that Er{sup 3+} ions are preferentially dispersed in HfO{sub 2}-rich regions of the glassy waveguide, even at the lowest HfO{sub 2} concentration. For all samples, no Er{sup 3+}-Er{sup 3+} coordination shell has been detected by EXAFS. The presented structural results allow us to understand some spectroscopic properties typical of Er{sup 3+}-doped SiO{sub 2} glassy waveguides co-doped with HfO{sub 2}.

Afify, N. D.; Dalba, G.; Armellini, C.; Ferrari, M.; Rocca, F.; Kuzmin, A. [Dipartimento di Fisica, Universita degli Studi di Trento, Via Sommarive 14, I-38100 Povo (Trento) (Italy); IFN-CNR, Istituto di Fotonica e Nanotecnologie del Consiglio Nazionale delle Ricerche, Sezione FBK-CeFSA di Trento, Via alla Cascata 56/C, I-38100 Povo (Trento) (Italy); Institute of Solid State Physics, University of Latvia, LV-1063 RIGA (Latvia)

2007-07-01T23:59:59.000Z

284

8 - Hydrothermal Synthesis and Crystal Growth of Fluorides, Sulfides, Tungstates, Molybdates, and Related Compounds (Coordinated Complex Crystals, Part II)  

Science Journals Connector (OSTI)

In Chapter 8 we deal with fluorides, sulfides, tungstates, titanates, molybdates, tantalates, neobates, selenides, and related compounds. The synthesis of these compounds did not carry much geological significance in the past; hence, their synthesis began in the middle of the twentieth century. However, the interest was purely academic. Today, these compounds have a great technological significance. Although the synthesis of these compounds is being studied extensively worldwide, interest is more confined to the nanosize crystals rather than the bulk single crystals growth. Some of these coordinated complexes with reductions in the size and the establishment of core-shell structures carry special characteristics useful as sensors, quantum dots, imagers, semiconductors over a wide band gap region, and so on. Keywords hermothermal phase equilibria; rich substitutional chemistry; antiferromagnetic behavior; rare earth flurides; oxyfluorinated compounds; photoconductivity

K. Byrappa; Masahiro Yoshimura

2013-01-01T23:59:59.000Z

285

Sorbent selection and design considerations for uranium trapping. [H-151 alumina, XF-100 alumina, F-1 alumina, sodium fluoride  

SciTech Connect (OSTI)

The efficient removal of UF/sub 6/ from effluent streams can be accomplished through the selection of the best solid sorbent and the implementation of good design principles. Pressure losses, sorbent capacity, reaction kinetics, sorbent regeneration/uranium recovery requirements and the effects of other system components are the performance factors which are summarized. The commonly used uranium trapping materials highlighted are sodium fluoride, H-151 alumina, XF-100 alumina, and F-1 alumina. Sorbent selection and trap design have to be made on a case-by-case basis but the theoretical modeling studies and the evaluation of the performance factors presented can be used as a guide for other chemical trap applications.

Schultz, R.M.; Hobbs, W.E.; Norton, J.L.; Stephenson, M.J.

1981-07-01T23:59:59.000Z

286

Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors  

SciTech Connect (OSTI)

In this work, the effects of fluorine (F) incorporation on electrical characteristics of HfO{sub 2}/InP and HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As gate stack are presented. F had been introduced into HfO{sub 2} gate dielectric by postgate CF{sub 4} plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysis and a secondary ion mass spectrometry technique. Compared to the control sample, fluorinated samples had great improvements in subthreshold swing, hysteresis, the normalized extrinsic transconductance, and the normalized drain current. These improvements can be attributed to the reduction in fixed charge in the HfO{sub 2} bulk and less interface trap density at the HfO{sub 2}/III-V interface.

Chen Yenting; Zhao Han; Wang Yanzhen; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Texas 78758 (United States)

2010-06-21T23:59:59.000Z

287

Alternative Fuels Data Center: Biodiesel Producer Requirements  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Biodiesel Producer Biodiesel Producer Requirements to someone by E-mail Share Alternative Fuels Data Center: Biodiesel Producer Requirements on Facebook Tweet about Alternative Fuels Data Center: Biodiesel Producer Requirements on Twitter Bookmark Alternative Fuels Data Center: Biodiesel Producer Requirements on Google Bookmark Alternative Fuels Data Center: Biodiesel Producer Requirements on Delicious Rank Alternative Fuels Data Center: Biodiesel Producer Requirements on Digg Find More places to share Alternative Fuels Data Center: Biodiesel Producer Requirements on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Biodiesel Producer Requirements Biodiesel is defined as a fuel that is composed of mono-alkyl esters of long-chain fatty acids derived from plant or animal matter, meets the

288

Deposition of TiN and HfO{sub 2} in a commercial 200 mm remote plasma atomic layer deposition reactor  

SciTech Connect (OSTI)

The authors describe a remote plasma atomic layer deposition reactor (Oxford Instruments FlexAL trade mark sign ) that includes an inductively coupled plasma source and a load lock capable of handling substrates up to 200 mm in diameter. The deposition of titanium nitride (TiN) and hafnium oxide (HfO{sub 2}) is described for the combination of the metal-halide precursor TiCl{sub 4} and H{sub 2}-N{sub 2} plasma and the combination of the metallorganic precursor Hf[N(CH{sub 3})(C{sub 2}H{sub 5})]{sub 4} and O{sub 2} plasma, respectively. The influence of the plasma exposure time and substrate temperature has been studied and compositional, structural, and electrical properties are reported. TiN films with a low Cl impurity content were obtained at 350 deg. C at a growth rate of 0.35 A /cycle with an electrical resistivity as low as 150 {mu}{omega} cm. Carbon-free (detection limit <2 at. %) HfO{sub 2} films were obtained at a growth rate of 1.0 A /cycle at 290 deg. C. The thickness and resisitivity nonuniformity was <5% for the TiN and the thickness uniformality was <2% for the HfO{sub 2} films as determined over 200 mm wafers.

Heil, S. B. S.; Hemmen, J. L. van; Hodson, C. J.; Singh, N.; Klootwijk, J. H.; Roozeboom, F.; Sanden, M. C. M. van de; Kessels, W. M. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Oxford Instruments Plasma Technology, North End, Yatton BS49 4AP (United Kingdom); Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven (Netherlands); NXP Semiconductors Research, High Tech Campus 4, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

2007-09-15T23:59:59.000Z

289

Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices  

SciTech Connect (OSTI)

As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metal–oxide–semiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ?4.6?eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.

Lee, Albert, E-mail: alee@intermolecular.com; Fuchigami, Nobi; Pisharoty, Divya; Hong, Zhendong; Haywood, Ed; Joshi, Amol; Mujumdar, Salil; Bodke, Ashish; Karlsson, Olov [Intermolecular, 3011 North First Street, San Jose, California 95134 (United States); Kim, Hoon; Choi, Kisik [GLOBALFOUNDRIES Technology Research Group, 257 Fuller Road, Albany, New York 12309 (United States); Besser, Paul [GLOBALFOUNDRIES, 1050 East Arques, Sunnyvale, California 94085 (United States)

2014-01-15T23:59:59.000Z

290

Ion-radical synergy in HfO{sub 2} etching studied with a XeF{sub 2}/Ar{sup +} beam setup  

SciTech Connect (OSTI)

To gain more insight into fundamental aspects of the etching behavior of Hf-based high-k materials in plasma etch reactors, HfO{sub 2} films were etched in a multiple-beam setup consisting of a low energy Ar{sup +} ion beam and a XeF{sub 2} radical beam. The etch rate and etch products were monitored by real-time ellipsometry and mass spectrometry, respectively. Although etching of HfO{sub 2} in XeF{sub 2}/Ar{sup +} chemistry is mainly a physical effect, an unambiguous proof of the ion-radical synergistic effect for the etching of HfO{sub 2} is presented. The etch yield for 400 eV Ar{sup +} ions at a substrate temperature of 300 deg. C was 0.3 atoms/ion for Ar{sup +} sputtering and increased to 2 atoms/ion when XeF{sub 2} was also supplied. The etch yield proved to follow the common square root of ion energy dependence both for pure sputtering and radical enhanced etching, with a threshold energy at room temperature of 69{+-}17 eV for Ar{sup +} ions and 54{+-}14 eV for Ar{sup +} ions with XeF{sub 2}.

Gevers, P. M.; Beijerinck, H. C. W.; Sanden, M. C. M. van de; Kessels, W. M. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

2008-04-15T23:59:59.000Z

291

Band offsets of Al{sub 2}O{sub 3} and HfO{sub 2} oxides deposited by atomic layer deposition technique on hydrogenated diamond  

SciTech Connect (OSTI)

High-k oxide insulators (Al{sub 2}O{sub 3} and HfO{sub 2}) have been deposited on a single crystalline hydrogenated diamond (H-diamond) epilayer by an atomic layer deposition technique at temperature as low as 120 Degree-Sign C. Interfacial electronic band structures are characterized by X-ray photoelectron spectroscopy. Based on core-level binding energies and valence band maximum values, valence band offsets are found to be 2.9 {+-} 0.2 and 2.6 {+-} 0.2 eV for Al{sub 2}O{sub 3}/H-diamond and HfO{sub 2}/H-diamond heterojunctions, respectively. Band gaps of the Al{sub 2}O{sub 3} and HfO{sub 2} have been determined to be 7.2 {+-} 0.2 and 5.4 {+-} 0.2 eV by measuring O 1s energy loss spectra, respectively. Both the Al{sub 2}O{sub 3}/H-diamond and HfO{sub 2}/H-diamond heterojunctions are concluded to be type-II staggered band configurations with conduction band offsets of 1.2 {+-} 0.2 and 2.7 {+-} 0.2 eV, respectively.

Liu, J. W.; Liao, M. Y.; Imura, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Koide, Y. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Center of Materials Research for Low Carbon Emission, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2012-12-17T23:59:59.000Z

292

Addendum to ''Phase selection and transition in Hf-rich hafnia-titania nanolaminates'' (on SiO{sub 2}) [J. Appl. Phys. 109, 123523 (2011)]: Hafnon formation  

SciTech Connect (OSTI)

Continued investigation of hafnia-titania nanolaminates on silica substrates after long term annealing shows that hafnon (HfSiO{sub 4}) is formed, in addition to the previously reported phases. Here, a 293 nm-thick stack of 5 nm HfO{sub 2}-4 nm TiO{sub 2} bilayers (0.51 mole fraction HfO{sub 2}) is sputter deposited on fused SiO{sub 2} and annealed in air at 1173 K for up to 192 h and then at 1273 K for up to 96 h. X-ray diffraction shows that hafnon crystallizes after 24 h at 1273 K. Micro-Raman spectroscopy/microscopy shows that hafnon crystallization is heterogeneous. No film-substrate reaction is observed for single layer HfO{sub 2} on SiO{sub 2} annealed under similar conditions. We suggest the nanolaminate's complex annealed microstructure provides fast diffusion paths that enable hafnon formation.

Cisneros-Morales, Massiel Cristina; Aita, Carolyn Rubin [Department of Chemistry and Biochemistry, University of Wisconsin-Milwaukee, P.O. Box 413, Milwaukee, Wisconsin 53201 (United States)

2012-05-15T23:59:59.000Z

293

H.F. Diaz and R.S. Bradley (eds.), The Hadley Circulation: Present, Past and Future, 121152. 2005 Kluwer Academic Publishers. Printed in the Netherlands  

E-Print Network [OSTI]

121 H.F. Diaz and R.S. Bradley (eds.), The Hadley Circulation: Present, Past and Future, 121-SEA INTERACTION, AND THE RISING BRANCH OF THE HADLEY CIRCULATION Shang-Ping Xie International Pacific Research in the meridional direction is the ul- timate drive for the global Hadley circulation, dictating that its rising

Xie, Shang-Ping

294

ULF wave occurrence statistics in a high-latitude HF Doppler sounder D. M. Wright, T. K. Yeoman, T. B. Jones  

E-Print Network [OSTI]

ULF wave occurrence statistics in a high-latitude HF Doppler sounder D. M. Wright, T. K. Yeoman, T was to establish the optimum con®guration for a new high-latitude Doppler sounder experiment, called DOPE (Wright, 1996; Wright et al., 1997), and to determine the likelihood of the experiment observing pulsation eects

Paris-Sud XI, Université de

295

Activation Volume for Hf Diffusion in an Amorphous Ni0.54Zr0.46 Alloy  

Science Journals Connector (OSTI)

In this Letter we present the results of a diffusion study of Hf in a Ni0.54Zr0.46 amorphous alloy. We have measured the diffusion properties with and without pressure, up to 1 GPa. From these measurements we can deduce an Arrhenius behavior of the diffusion, with an activation energy of 0.76 eV and a pre-exponential factor of 7.4×10-17 m2/s. The activation volume amounts to 8.5 ?3. Activation volume and energy are related by the Keyes relationship. We then discuss to what extent presently proposed diffusion mechanisms, point defects, or collective processes can be tested against these results.

A. Grandjean; P. Blanchard; Y. Limoge

1997-01-27T23:59:59.000Z

296

In situ study of HfO{sub 2} atomic layer deposition on InP(100)  

SciTech Connect (OSTI)

The interfacial chemistry of the native oxide and chemically treated InP samples during atomic layer deposition (ALD) HfO{sub 2} growth at 250 Degree-Sign C has been studied by in situ X-ray photoelectron spectroscopy. The In-oxide concentration is seen to gradually decrease on the native oxide and acid etched samples. No significant changes of the P-oxide concentrations are detected, while the P-oxides chemical states are seen to change gradually during the initial cycles of ALD on the native oxide and the chemically treated samples. (NH{sub 4}){sub 2}S treatment strongly decreases In-oxide and P-oxide concentrations prior to ALD and maintains low concentrations during the ALD process.

Dong, H.; Brennan, B.; Kim, J.; Hinkle, C. L.; Wallace, R. M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Zhernokletov, D. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-04-29T23:59:59.000Z

297

Interfacial Layer Growth Condition Dependent Carrier Transport Mechanisms in HfO2/SiO2 Gate Stacks  

SciTech Connect (OSTI)

The temperature and field dependent leakage current in HfO{sub 2}/SiO{sub 2} gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 C to 105 C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level ({phi}{sub t}) and activation energy (E{sub a}) increase for chemically grown IL devices. The trap level energy, ({phi}{sub t}) -0.2 eV, indicates that doubly charged oxygen vacancies (V{sup 2-}) are the active electron traps which contribute to the leakage current in these gate stacks.

Sahoo, S. K.; Misra, D.

2012-06-04T23:59:59.000Z

298

Quantifying the parameters of successful agricultural producers  

E-Print Network [OSTI]

The primary purpose of the study was to quantify the parameters of successful agricultural producers. Through the use of the Financial and Risk Management (FARM) Assistance database, this study evaluated economic measures for row-crop producers...

Kaase, Gregory Herman

2006-08-16T23:59:59.000Z

299

Biomass Producer or Collector Tax Credit (Oregon)  

Broader source: Energy.gov [DOE]

 The Oregon Department of Energy provides a tax credit for agricultural producers or collectors of biomass.  The credit can be used for eligible biomass used to produce biofuel; biomass used in...

300

Experiments with Wind to Produce Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nat EXPERIMENTS WITH WIND TO PRODUCE ENERGY Curriculum: Wind Power (simple machines, weatherclimatology, aerodynamics, leverage, mechanics, atmospheric pressure, and energy...

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Definition: Independent Power Producer | Open Energy Information  

Open Energy Info (EERE)

Producer Producer Jump to: navigation, search Dictionary.png Independent Power Producer Any entity that owns or operates an electricity generating facility that is not included in an electric utility's rate base. This term includes, but is not limited to, cogenerators and small power producers and all other nonutility electricity producers, such as exempt wholesale generators, who sell electricity.[1] View on Wikipedia Wikipedia Definition An Independent Power Producer is an entity, which is not a public utility, but which owns facilities to generate electric power for sale to utilities and end users. NUGs may be privately held facilities, corporations, cooperatives such as rural solar or wind energy producers, and non-energy industrial concerns capable of feeding excess energy into

302

Preparation of sorbents containing ettringite phase from concrete sludge and their performance in removing borate and fluoride ions from waste water  

Science Journals Connector (OSTI)

Concrete sludge is an industrial waste slurry containing hydrated cement, aggregates and water. Solid sorbents containing ettringite, Ca6Al2(SO4)3(OH)12·26H2O, were prepared from concrete sludge by adding various amounts of aluminum sulfate to enhance ettringite formation. Anion exchange performance of the sorbents was examined using model waste waters containing boron or fluoride ions. The removal behavior depended on the calcium/aluminum ratio and the heat treatment temperature after drying. For the same Ca/Al ratio, improved removal performance was observed for sorbents treated at higher temperatures. The highest removal capacity was found when the sorbent was prepared with a molar ratio of Ca/Al of 3.2 and heat treatment at 175 °C. The final concentrations of boron and fluoride were 6.3 mg-B/L, and less than 4 mg-F/L for initial concentrations of 100 mg-B/L and 300 mg-F/L. Treatment of the sorbents at higher temperature dehydrated the ettringite phase to form metaettringite phase. The sorbents prepared in the present study can be used in a boron and fluoride removal process that meets the effluent standard in Japan.

Yusuke Tsunashima; Atsushi Iizuka; Junichiro Akimoto; Teruhisa Hongo; Akihiro Yamasaki

2012-01-01T23:59:59.000Z

303

Ocean Currents Produced by Evaporation and Precipitation  

Science Journals Connector (OSTI)

1 September 1933 research-article Ocean Currents Produced by Evaporation and Precipitation G. R. Goldsbrough The Royal Society is collaborating with JSTOR to digitize, preserve...

1933-01-01T23:59:59.000Z

304

On Ocean Currents Produced by Winds  

Science Journals Connector (OSTI)

1 January 1935 research-article On Ocean Currents Produced by Winds G. R. Goldsbrough The Royal Society is collaborating with JSTOR to digitize, preserve, and extend access...

1935-01-01T23:59:59.000Z

305

Lead in Maple Syrup Produced in Connecticut  

Science Journals Connector (OSTI)

Lead in Maple Syrup Produced in Connecticut ... Department of Analytical Chemistry, The Connecticut Agricultural Experiment Station, P.O. ... Box 1106, New Haven, Connecticut 06504 ...

David E. Stilwell; Craig L. Musante

1996-10-17T23:59:59.000Z

306

Fracture characteristics and their relationships to producing...  

Open Energy Info (EERE)

area Jump to: navigation, search OpenEI Reference LibraryAdd to library Book: Fracture characteristics and their relationships to producing zones in deep wells, Raft River...

307

California: Agricultural Residues Produce Renewable Fuel | Department...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

that validated the viability of this technology platform for producing cellulosic ethanol from corn stover at reasonable yields. The California Energy Commission has awarded...

308

Hydrogenase mimic produces hydrogen under the light  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

about Center Center Video Library Bisfuel Picture Gallery Hydrogenase mimic produces hydrogen under the light 24 Jan 2013 Researchers from the laboratory of Giovanna Ghirlanda...

309

Scientists produce transparent, light-harvesting material  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Transparent, light-harvesting material Scientists produce transparent, light-harvesting material The material could be used in development of transparent solar panels. November 3,...

310

In situ observation of oxygen gettering by titanium overlayer on HfO{sub 2}/SiO{sub 2}/Si using high-resolution Rutherford backscattering spectroscopy  

SciTech Connect (OSTI)

Oxygen gettering by Ti overlayer (2-8 nm) on a HfO{sub 2}(3 nm)/SiO{sub 2}(1.5 nm)/Si(001) structure was investigated using high-resolution Rutherford backscattering spectroscopy. After deposition of a thin Ti layer, the interfacial SiO{sub 2} layer is reduced by {approx}0.2 nm and the released oxygen is incorporated in Ti layer. Subsequent annealing at 330 deg. C in UHV causes further reduction by 0.1-0.8 nm depending on the Ti layer thickness. In addition to the reduction of the SiO{sub 2} layer, significant oxygen depletion in the HfO{sub 2} layer was observed for thicker Ti layers after annealing.

Nakajima, Kaoru; Fujiyoshi, Akira; Ming, Zhao; Suzuki, Motofumi; Kimura, Kenji [Department of Micro Engineering, Kyoto University, Yoshida-Honmachi, Sakyo, Kyoto 606-8501 (Japan)

2007-09-15T23:59:59.000Z

311

Intermixing between HfO{sub 2} and GeO{sub 2} films deposited on Ge(001) and Si(001): Role of the substrate  

SciTech Connect (OSTI)

Thermally driven atomic transport in HfO{sub 2}/GeO{sub 2}/substrate structures on Ge(001) and Si(001) was investigated in N{sub 2} ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO{sub 2}/Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO{sub 2}/GeO{sub 2} stacks are stable only if isolated from the Ge substrate.

Soares, G. V.; Krug, C. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Miotti, L.; Bastos, K. P.; Lucovsky, G. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States); Baumvol, I. J. R. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Universidade de Caxias do Sul, Caxias do Sul, Rio Grande do Sul 95070-560 (Brazil); Radtke, C. [Instituto de Quimica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil)

2011-03-28T23:59:59.000Z

312

Highly transparent low capacitance plasma enhanced atomic layer deposition Al{sub 2}O{sub 3}-HfO{sub 2} tunnel junction engineering  

SciTech Connect (OSTI)

The development of metallic single electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions. These tunnel junctions should insure high tunnel current levels, low thermionic current, and low capacitance. The authors use atomic layer deposition to fabricate Al{sub 2}O{sub 3} and HfO{sub 2} thin layers. Tunnel barrier engineering allows the achievement of low capacitance Al{sub 2}O{sub 3} and HfO{sub 2} tunnel junctions using optimized annealing and plasma exposure conditions. Different stacks were designed and fabricated to increase the transparency of the tunnel junction while minimizing thermionic current. This tunnel junction is meant to be integrated in SET to enhance its electrical properties (e.g., operating temperature, I{sub ON}/I{sub OFF} ratio)

El Hajjam, Khalil, E-mail: khalil.el-hajjam@insa-lyon.fr [INL, INSA, UMR CNRS 5270, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France and Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec (Canada); Baboux, Nicolas; Calmon, Francis [INL, INSA, UMR CNRS 5270, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Souifi, Abdelkader [Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec (Canada); Poncelet, Olivier; Francis, Laurent A. [ICTEAM, ELEN, UCL, Place du Levant 3, 1348 Louvain-la-Neuve (Belgium); Ecoffey, Serge; Drouin, Dominique [Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada and Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec (Canada)

2014-01-15T23:59:59.000Z

313

In Situ Synchrotron Based X-ray Fluorescence and Scattering Measurements During Atomic Layer Deposition: Initial Growth of HfO2 on Si and Ge Substrates  

SciTech Connect (OSTI)

The initial growth of HfO{sub 2} was studied by means of synchrotron based in situ x-ray fluorescence (XRF) and grazing incidence small angle x-ray scattering (GISAXS). HfO{sub 2} was deposited by atomic layer deposition (ALD) using tetrakis(ethylmethylamino)hafnium and H{sub 2}O on both oxidized and H-terminated Si and Ge surfaces. XRF quantifies the amount of deposited material during each ALD cycle and shows an inhibition period on H-terminated substrates. No inhibition period is observed on oxidized substrates. The evolution of film roughness was monitored using GISAXS. A correlation is found between the inhibition period and the onset of surface roughness.

K Devloo-Casier; J Dendooven; K Ludwig; G Lekens; J DHaen; C Detavernier

2011-12-31T23:59:59.000Z

314

In situ study of the role of substrate temperature during atomic layer deposition of HfO{sub 2} on InP  

SciTech Connect (OSTI)

The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO{sub 2} on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO{sub 2} at different temperatures. An (NH{sub 4}){sub 2} S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200 °C, 250 °C and 300 °C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states.

Dong, H.; Santosh, K.C.; Qin, X.; Brennan, B.; McDonnell, S.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Zhernokletov, D. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Hinkle, C. L.; Cho, K.; Wallace, R. M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-10-21T23:59:59.000Z

315

On the electrical stress-induced oxide-trapped charges in thin HfO{sub 2}/SiO{sub 2} gate dielectric stack  

SciTech Connect (OSTI)

Oxide charge buildup and its generation kinetics during constant voltage stress in TaN/HfO{sub 2}/SiO{sub 2}/p-Si structures have been experimentally investigated. From the oxide charge relaxation experiments, nature and energy location of the as-fabricated intrinsic hole traps in the gate stack have also been determined. Our measurement results indicate that the dispersive proton transport through the interfacial SiO{sub 2} contributes larger than hole trapping in positive charge buildup in the stack. From the bias temperature stress measurement results in both control oxide and HfO{sub 2}/SiO{sub 2} stacks, we have identified overcoordinated [Si{sub 2}=OH]{sup +} centers as the proton-induced defects located in the interfacial SiO{sub 2} layer of the stack. Finally, an empirical equation is proposed to explain the stress-induced oxide positive charge buildup.

Samanta, Piyas; Zhu Chunxiang; Chan, Mansun [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China); Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 (Singapore); Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China)

2007-09-10T23:59:59.000Z

316

Effect of lattice anharmonicity in the structural phase transformation of Laves phase HfV2 alloy: A first-principles investigation  

SciTech Connect (OSTI)

First-principles theory was developed to study the structural phase transformations in the Laves phase HfV2 alloy. We explored the energy landscape and established the role of lattice anharmonicity underlying the structural phase transitions. Our approach is based on a phenomenological Landau theory for the structural phase transition and a mean-field approximation for the free energy. First-principles calculations were utilized to obtain the distortion energy as a function of relevant deformations, and to deduce parameters for constructing the free energy. Our result for the phase transition temperature of HfV2 is in good agreement with experiment. We find that the high-temperature cubic C15 phase is stabilized by the effect of lattice anharmonicity. The theory also predicts an anomalous increase in shear modulus with increasing temperature for systems where the anharmonicity is pronounced.

Krcmar, Maja [Grand Valley State University (GVSU), Michigan] [Grand Valley State University (GVSU), Michigan; Fu, Chong Long [ORNL] [ORNL

2013-01-01T23:59:59.000Z

317

Synchrotron radiation photoemission study of interfacial electronic structure of HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As(001)-4?×?2 from atomic layer deposition  

SciTech Connect (OSTI)

The growth of a passivating layer on a In{sub 0.53}Ga{sub 0.47}As(001)-4?×?2 surface by atomic-layer deposition of tetrakis[ethylmethylamino]Hafnium (TEMAHf)) followed by the water pulse was investigated by synchrotron radiation photoemission. The Hf atoms maintain four-fold coordination, both after the initial TEMAHf deposition and the subsequent water pulse. The Hf atoms initially bond to the As dangling bonds of the surface As atom located on the edges of the raised ridges. One EMA ligand is removed in this process. Subsequent water exposure substitutes OH ligand for one or more remaining EMA ligands. These in turn react with TEMAHf to form Hf-O-Hf bonds allowing the hafnium oxides to grow. The surface In atoms on the terrace of the raised ridges were partially removed, but none bonded of the precursor atoms. Correlations between the interfacial electronic structure and the electric performance are discussed.

Pi, T. W., E-mail: pi@nsrrc.org.tw, E-mail: gkwer@verizon.net, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Lin, T. D.; Chang, Y. C.; Hong, M., E-mail: pi@nsrrc.org.tw, E-mail: gkwer@verizon.net, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Lin, H. Y.; Kwo, J., E-mail: pi@nsrrc.org.tw, E-mail: gkwer@verizon.net, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wertheim, G. K., E-mail: pi@nsrrc.org.tw, E-mail: gkwer@verizon.net, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Woodland Consulting, 175 Woodland Ave., Morristown, New Jersey 07960 (United States)

2014-01-27T23:59:59.000Z

318

Interface effect on dielectric constant of HfO{sub 2}/Al{sub 2}O{sub 3} nanolaminate films deposited by plasma-enhanced atomic layer deposition  

SciTech Connect (OSTI)

The effect of the interface between Al{sub 2}O{sub 3} and HfO{sub 2} sublayers on the dielectric constant was investigated in HfO{sub 2}/Al{sub 2}O{sub 3} nanolaminate films deposited using plasma-enhanced atomic layer deposition. After annealing at 700 deg. C, the dielectric constants of the nanolaminate films with a sublayer thickness of 40 A ring or greater were the same as the calculated values for a series of capacitors consisting of amorphous Al{sub 2}O{sub 3} and monoclinic or tetragonal HfO{sub 2}. As the sublayer thickness was reduced to 10 A, the dielectric constant increased up to 17.7 because a thin Hf-O-Al mixture layer, of which the number increases drastically in the nanolaminate films with thin sublayers, is formed at the interface.

Park, Pan Kwi; Cha, Eun-Soo; Kang, Sang-Won [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)

2007-06-04T23:59:59.000Z

319

Interfacial Layer Growth Condition Dependent Electrical Conduction in HfO2/SiO2 Heterostructured Thin Films  

SciTech Connect (OSTI)

The electrical conduction mechanism contributing to the leakage current at different field regions has been studied in this work. The current-voltage (I-V) measurement of TiN/HfO{sub 2}/SiO{sub 2}/P-Si nMOS capacitor has been taken for two different interfacial layer (SiO{sub 2}) growth conditions such as in situ steam grown (ISSG) and chemical processes. It is observed that Poole-Frenkel mechanism is the dominant conduction mechanism in high field region whereas Ohmic conduction is dominant in the low field region. Also it is seen that the gate leakage current is reduced for the devices having chemically grown interfacial layer compared to that of ISSG devices. Both trap energy level ({phi}{sub t}) and activation energy (E{sub a}) increase in the chemically grown interfacial layer devices for the Poole-Frenkel and Ohmic conduction mechanisms respectively in comparison to ISSG devices. Trap energy level ({phi}{sub t}) of {approx} 0.2 eV, obtained from Poole-Frenkel mechanism indicates that the doubly ionized oxygen vacancies (V{sup 2-}) are the active defects and are contributing to the leakage current in these devices.

Sahoo, S. K.; Misra, D.

2012-01-01T23:59:59.000Z

320

PRODUCER -SCROUNGER GAME n-Person Game  

E-Print Network [OSTI]

size, ESS frequency of scrounging Assumptions of Producer-Scrounger Game Fix group (or population size Producer invades Scrounger n-Person Game with ESS q* : 0 ESS ** q P q S dq dW dq dW ESS frequency of scrounger

Caraco, Thomas

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers  

SciTech Connect (OSTI)

Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-21T23:59:59.000Z

322

Realization of high-quality HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As by in-situ atomic-layer-deposition  

SciTech Connect (OSTI)

High {kappa} dielectric of HfAlO/HfO{sub 2} was an in-situ atomic-layer-deposited directly on molecular beam epitaxy grown In{sub 0.53}Ga{sub 0.47}As surface without using pre-treatments or interfacial passivation layers, where HfAlO (HfO{sub 2}:Al{sub 2}O{sub 3} {approx} 4:1) with high re-crystallization temperature was employed as the top oxide layer. The HfAlO ({approx}4.5 nm)/HfO{sub 2} (0.8 nm)/In{sub 0.53}Ga{sub 0.47}As metal oxide semiconductor capacitors have exhibited an oxide/In{sub 0.53}Ga{sub 0.47}As interface free of arsenic-related defective bonding, thermodynamic stability at 800 deg. C, and low leakage current densities of <10{sup -7} A/cm{sup 2} at {+-}1 MV/cm. The interfacial trap density (D{sub it}) spectra in absence of mid-gap peaks were obtained by temperature-dependent capacitance and conductance with D{sub it}'s of 2-3 x 10{sup 12} eV{sup -1} cm{sup -2} below and 6-12 x 10{sup 11} eV{sup -1} cm{sup -2} above the mid-gap of In{sub 0.53}Ga{sub 0.47}As, respectively. An equivalent oxide thickness of less than 1 nm has been achieved by reducing the HfAlO thickness to {approx}2.7 nm with the same initial HfO{sub 2} thickness of {approx}0.8 nm.

Lin, T. D.; Hong, M. [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Chang, Y. H. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, C. A.; Huang, M. L.; Lee, W. C. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)

2012-04-23T23:59:59.000Z

323

Effects of in situ N{sub 2} plasma treatment on etch of HfO{sub 2} in inductively coupled Cl{sub 2}/N{sub 2} plasmas  

SciTech Connect (OSTI)

The etch selectivity of HfO{sub 2} to Si reported to date is poor. To improve the selectivity, one needs to either increase the etch rate of HfO{sub 2} or decrease the etch rate of Si. In this work, the authors investigate the etch selectivity of HfO{sub 2} in Cl{sub 2}/N{sub 2} plasmas. In particular, the effects of in situ N{sub 2} plasma treatment of HfO{sub 2} and Si were investigated. The silicon substrate was exposed to nitrogen plasma and was nitrided, which was confirmed by x-ray photoelectron spectroscopy. The nitrided Si etching was suppressed in Cl{sub 2}/N{sub 2} plasmas. The effectiveness of nitridation was studied with varying the plasma power, bias power, pressure, and N{sub 2} plasma exposure time. The results show that the etch resistance increased with increased power and decreased pressure. A minimum exposure time was required to obtain etch resistant property. The applied bias power increased the etch rate of Si substrate, so it should not be used during N{sub 2} plasma treatment. Fortunately, the etch rate of HfO{sub 2} was increased by the nitridation process. Therefore, HfO{sub 2}/Si selectivity can be improved by nitridation and became higher than 5 under proper exposure condition.

Lin Chaung; Leou, K.-C.; Fan, Y.-C.; Li, T.-C.; Chang, K.-H.; Lee, L.-S.; Tzeng, P.-J. [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30043, Taiwan (China); Electronic Research and Service Organization, Industrial Technology Research Institute, Hsinchu 30043, Taiwan (China)

2007-05-15T23:59:59.000Z

324

Performance Profiles of Major Energy Producers 1993  

Gasoline and Diesel Fuel Update (EIA)

3) 3) Distribution Category UC-950 Performance Profiles of Major Energy Producers 1993 Energy Information Administration Office of Energy Markets and End Use U.S. Department of Energy Washington, DC 20585 Energy Information Administration/ Performance Profiles of Major Energy Producers 1993 ii This report was prepared by the Energy Information Administration, the independent statistical and analytical agency within the Department of Energy. The information contained herein should not be construed as advocating or reflecting any policy position of the Department of Energy or any other organization. Energy Information Administration/ Performance Profiles of Major Energy Producers 1993 iii The Financial Reporting System, 1977-1993 diskette is available from the Energy Information Administration.

325

Why Sequencea Biogas-Producing Microbial Community?  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a Biogas-Producing Microbial Community? a Biogas-Producing Microbial Community? The world population is steadily growing, and so is the amount of waste produced by human activity. For example, an estimated 236 million tons of municipal solid waste are produced annually in the U.S., 50% of which is biomass. At the same time, energy sources are rapidly depleting. Converting organic waste to renewable biofuel by anaerobic digestion hence represents one appealing option to mitigate this problem. Biogas is a natural by-product of the decomposition of organic matter in an oxygen-free environment and comprises primarily methane and carbon dioxide. This naturally occurring process has been known for more than a century. More recently, it has been gaining importance as more efficient anaerobic digestion technologies have been developed to treat and recover energy (in

326

California: Agricultural Residues Produce Renewable Fuel  

Office of Energy Efficiency and Renewable Energy (EERE)

Logos Technologies and EERE are partnering with Edeniq of Visalia to build a plant that will produce cellulosic ethanol from switchgrass, wood chips, and corn leaves, stalks, and husks--all plentiful, nonfood feedstock sources in California.

327

Ex Parte Communications- Uranium Producers of America  

Broader source: Energy.gov [DOE]

On Thursday, February 12, 2015, representatives from the Uranium  Producers  of America (UPA) met with the Department of Energy (DOE) officials to discuss the management of the federal excess...

328

Producing X-rays at the APS  

ScienceCinema (OSTI)

An introduction and overview of the Advanced Photon Source at Argonne National Laboratory, the technology that produces the brightest X-ray beams in the Western Hemisphere, and the research carried out by scientists using those X-rays.

None

2013-04-19T23:59:59.000Z

329

Methods and systems for producing syngas  

DOE Patents [OSTI]

Methods and systems are provided for producing syngas utilizing heat from thermochemical conversion of a carbonaceous fuel to support decomposition of at least one of water and carbon dioxide using one or more solid-oxide electrolysis cells. Simultaneous decomposition of carbon dioxide and water or steam by one or more solid-oxide electrolysis cells may be employed to produce hydrogen and carbon monoxide. A portion of oxygen produced from at least one of water and carbon dioxide using one or more solid-oxide electrolysis cells is fed at a controlled flow rate in a gasifier or combustor to oxidize the carbonaceous fuel to control the carbon dioxide to carbon monoxide ratio produced.

Hawkes, Grant L; O'Brien, James E; Stoots, Carl M; Herring, J. Stephen; McKellar, Michael G; Wood, Richard A; Carrington, Robert A; Boardman, Richard D

2013-02-05T23:59:59.000Z

330

Gas leakage and distribution characteristics of methyl bromide and sulfuryl fluoride during fumigations in a pilot flour mill  

Science Journals Connector (OSTI)

The half-loss time (HLT) is used as an indicator to quantify gas leakage rates during methyl bromide (MB) and sulfuryl fluoride (SF) fumigations. Comparisons of \\{HLTs\\} between three MB and three SF fumigations were quantified in the Hal Ross pilot flour mill, Department of Grain Science and Industry, Kansas State University, USA. The sealing quality or gas tightness of the mill before each fumigation was verified by a pressurization test. Fumigant concentrations during the six fumigations were monitored continuously at 30 locations among the five mill floors during the 24 h fumigation period. A weather station on the mill roof monitored barometric pressure, wind speed and direction, temperature, and relative humidity. A data logger on each mill floor recorded temperature and relative humidity. The pressurization test showed that the relationship between airflow rate and building static pressure varied among the fumigations despite the same areas being sealed by two separate fumigation service providers due to environmental conditions not being identical among the fumigations. Concentration differences of both fumigants within the mill ranged from 2 to 7 g/m3. The observed \\{HLTs\\} for the MB and SF fumigations were in the range of 3.61 to 28.64 h and 9.97 to 31.65 h, respectively, and were inversely related only to wind speeds during fumigation and not any other environmental conditions recorded. In our study, the fumigant leakage rate was found to be predominantly a function of wind speed rather than inherent gas characteristics of MB and SF.

Watcharapol Chayaprasert; Dirk E. Maier; Bhadriraju Subramanyam; Michelle Hartzer

2012-01-01T23:59:59.000Z

331

Identification and evaluation of alternatives for the disposition of fluoride fuel and flush salts from the molten salt reactor experiment at Oak Ridge National Laboratory, Oak Ridge, Tennessee  

SciTech Connect (OSTI)

This document presents an initial identification and evaluation of the alternatives for disposition of the fluoride fuel and flush salts stored in the drain tanks at the Molten Salt Reactor Experiment (MSRE) at Oak Ridge National Laboratory (ORNL). It will serve as a resource for the U.S. Department of Energy contractor preparing the feasibility study for this activity under the Comprehensive Environmental Response, Compensation and Liability Act (CERCLA). This document will also facilitate further discussion on the range of credible alternatives, and the relative merits of alternatives, throughout the time that a final alternative is selected under the CERCLA process.

NONE

1996-08-15T23:59:59.000Z

332

ANAEROBIC BIOLOGICAL TREATMENT OF PRODUCED WATER  

SciTech Connect (OSTI)

During the production of oil and gas, large amounts of water are brought to the surface and must be disposed of in an environmentally sensitive manner. This is an especially difficult problem in offshore production facilities where space is a major constraint. The chief regulatory criterion for produced water is oil and grease. Most facilities have little trouble meeting this criterion using conventional oil-water separation technologies. However, some operations have significant amounts of naphthenic acids in the water that behave as oil and grease but are not well removed by conventional technologies. Aerobic biological treatment of naphthenic acids in simulated-produced water has been demonstrated by others; however, the system was easily overloaded by the large amounts of low-molecular-weight organic acids often found in produced waters. The objective of this research was to determine the ability of an anaerobic biological system to treat these organic acids in a simulated produced water and to examine the potential for biodegradation of the naphthenic acids in the anaerobic environment. A small fixed-film anaerobic biological reactor was constructed and adapted to treat a simulated produced water. The bioreactor was tubular, with a low-density porous glass packing material. The inocula to the reactor was sediment from a produced-water holding pond from a municipal anaerobic digester and two salt-loving methanogenic bacteria. During start-up, the feed to the reactor contained glucose as well as typical produced-water components. When glucose was used, rapid gas production was observed. However, when glucose was eliminated and the major organic component was acetate, little gas was generated. Methane production from acetate may have been inhibited by the high salt concentrations, by sulfide, or because of the lack, despite seeding, of microbes capable of converting acetate to methane. Toluene, a minor component of the produced water (0.1 g/L) was removed in the reactor. Batch tests were conducted to examine naphthenic acid biodegradability under several conditions. The conditions used were seed from the anaerobic reactor, wetland sediments under aerobic and anaerobic conditions, and a sterile control. The naphthenic acid was from a commercial source isolated from Gulf Coast petroleum as was dosed at 2 mg/mL. The incubations were for 30 days at 30 C. The results showed that the naphthenic acids were not biodegraded under anaerobic conditions, but were degraded under aerobic conditions. Despite poor performance of the anaerobic reactor, it remains likely that anaerobic treatment of acetate, toluene, and, potentially, other produced-water components is feasible.

John R. Gallagher

2001-07-31T23:59:59.000Z

333

How is shale gas produced? | Department of Energy  

Office of Environmental Management (EM)

How is shale gas produced? How is shale gas produced? How is shale gas produced? More Documents & Publications Natural Gas from Shale: Questions and Answers Shale Gas Glossary...

334

Methods for producing reinforced carbon nanotubes  

DOE Patents [OSTI]

Methods for producing reinforced carbon nanotubes having a plurality of microparticulate carbide or oxide materials formed substantially on the surface of such reinforced carbon nanotubes composite materials are disclosed. In particular, the present invention provides reinforced carbon nanotubes (CNTs) having a plurality of boron carbide nanolumps formed substantially on a surface of the reinforced CNTs that provide a reinforcing effect on CNTs, enabling their use as effective reinforcing fillers for matrix materials to give high-strength composites. The present invention also provides methods for producing such carbide reinforced CNTs.

Ren, Zhifen (Newton, MA); Wen, Jian Guo (Newton, MA); Lao, Jing Y. (Chestnut Hill, MA); Li, Wenzhi (Brookline, MA)

2008-10-28T23:59:59.000Z

335

Solid fuel volatilization to produce synthesis gas  

DOE Patents [OSTI]

A method comprising contacting a carbon and hydrogen-containing solid fuel and a metal-based catalyst in the presence of oxygen to produce hydrogen gas and carbon monoxide gas, wherein the contacting occurs at a temperature sufficiently high to prevent char formation in an amount capable of stopping production of the hydrogen gas and the carbon monoxide gas is provided. In one embodiment, the metal-based catalyst comprises a rhodium-cerium catalyst. Embodiments further include a system for producing syngas. The systems and methods described herein provide shorter residence time and high selectivity for hydrogen and carbon monoxide.

Schmidt, Lanny D.; Dauenhauer, Paul J.; Degenstein, Nick J.; Dreyer, Brandon J.; Colby, Joshua L.

2014-07-29T23:59:59.000Z

336

Negative effect of crystallization on the mechanism of laser damage in a HfO{sub 2}/SiO{sub 2} multilayer  

SciTech Connect (OSTI)

Elucidation of the mechanisms of laser damage is indispensable in realizing high resistance mirrors for the next generation of ultra-short pulse high intensity lasers. In this study, the surface and a section of the laser-damaged area of a laser mirror were observed with a laser microscope and a transmission electron microscope (cross-sectional TEM), respectively. A grain boundary of HfO{sub 2} microcrystal was observed in the damaged area. This observation and an evaluation of the mirror's damage resistance showed that the formation of crystals in the multilayer mirror is one of the major determinants of damage resistance.

Tateno, Ryo [Shimadzu Corporation, 1, Nishinokyo-Kuwabaracho Nakagyo-ku, Kyoto 604-8511 (Japan); Okada, Hajime; Otobe, Tomohito; Kawase, Keigo; Koga, James K.; Kosuge, Atsushi; Nagashima, Keisuke; Sugiyama, Akira [Kansai Photon Science Institute, Japan Atomic Energy Agency, 8-1-7 Umemidai, Kizugawa-shi, Kyoto 619-0215 (Japan); Kashiwagi, Kunihiro [Department of Electrical and Communication Engineering, Faculty of Engineering, Toyo University, 2100, Kujirai Kawagoe-shi, Saitama 350-8585 (Japan)

2012-12-15T23:59:59.000Z

337

FAQ 7-How is depleted uranium produced?  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

How is depleted uranium produced? How is depleted uranium produced? How is depleted uranium produced? Depleted uranium is produced during the uranium enrichment process. In the United States, uranium is enriched through the gaseous diffusion process in which the compound uranium hexafluoride (UF6) is heated and converted from a solid to a gas. The gas is then forced through a series of compressors and converters that contain porous barriers. Because uranium-235 has a slightly lighter isotopic mass than uranium-238, UF6 molecules made with uranium-235 diffuse through the barriers at a slightly higher rate than the molecules containing uranium-238. At the end of the process, there are two UF6 streams, with one stream having a higher concentration of uranium-235 than the other. The stream having the greater uranium-235 concentration is referred to as enriched UF6, while the stream that is reduced in its concentration of uranium-235 is referred to as depleted UF6. The depleted UF6 can be converted to other chemical forms, such as depleted uranium oxide or depleted uranium metal.

338

Do hormonal control systems produce evolutionary inertia?  

Science Journals Connector (OSTI)

...A2006Neural crest cells and the community of plan for craniofacial development: historical...Rev. Ecol. Evol. 38, 793-817. Review. Do hormonal control systems produce evolutionary...Support, U.S. Gov't, Non-P.H.S. Review | 0 Gonadal Steroid Hormones | Animals...

2008-01-01T23:59:59.000Z

339

6, 1006310086, 2006 Lightning-produced  

E-Print Network [OSTI]

with lightning flash data from the Canadian Lightning Detection Network and Environment Canada Doppler radar measurements, the pro-15 duction of NO2 molecules per lightning flash is determined. Using these two methodsACPD 6, 10063­10086, 2006 Lightning-produced NO2 observed at Vanscoy, SK A. Fraser et al. Title

340

SOVIETS BUILD MACHINES TO PRODUCE KRILL PASTE'  

E-Print Network [OSTI]

EUROPE SOVIETS BUILD MACHINES TO PRODUCE KRILL PASTE' The Soviet Federal Research Institute of Fisheries and Oceanography ( V N I R 0) has built machines for production of a protein- rich paste from protein paste from Black Sea shrimp. Each machine, operated by 2 people, has a processing capacity of 1

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Performance Profiles of Major Energy Producers  

Reports and Publications (EIA)

The information and analyses in Performance Profiles of Major Energy Producers is intended to provide a critical review, and promote an understanding, of the possible motivations and apparent consequences of investment decisions made by some of the largest corporations in the energy industry.

2011-01-01T23:59:59.000Z

342

HF Chemical Lasers  

Science Journals Connector (OSTI)

The very rapid reaction rate of the H2 + F2 chain reaction coupled with the efficient formation of chain carriers by fast electron beam radiolysis of F2 and SF6 provide laser power of about 1012 watts/liter and q...

Reed J. Jensen

1975-01-01T23:59:59.000Z

343

Hf-irJ  

Office of Legacy Management (LM)

F, Lodi, New Jersey, is not being authorized because it does not meet the 100-square meter criteria as denoted in 40 CFR 192. *c If there are any questions, please call Arthur...

344

Beneficial Reuse of San Ardo Produced Water  

SciTech Connect (OSTI)

This DOE funded study was performed to evaluate the potential for treatment and beneficial reuse of produced water from the San Ardo oilfield in Monterey County, CA. The potential benefits of a successful full-scale implementation of this project include improvements in oil production efficiency and additional recoverable oil reserves as well as the addition of a new reclaimed water resource. The overall project was conducted in two Phases. Phase I identified and evaluated potential end uses for the treated produced water, established treated water quality objectives, reviewed regulations related to treatment, transport, storage and use of the treated produced water, and investigated various water treatment technology options. Phase II involved the construction and operation of a small-scale water treatment pilot facility to evaluate the process's performance on produced water from the San Ardo oilfield. Cost estimates for a potential full-scale facility were also developed. Potential end uses identified for the treated water include (1) agricultural use near the oilfield, (2) use by Monterey County Water Resources Agency (MCWRA) for the Salinas Valley Water Project or Castroville Seawater Intrusion Project, (3) industrial or power plant use in King City, and (4) use for wetlands creation in the Salinas Basin. All of these uses were found to have major obstacles that prevent full-scale implementation. An additional option for potential reuse of the treated produced water was subsequently identified. That option involves using the treated produced water to recharge groundwater in the vicinity of the oil field. The recharge option may avoid the limitations that the other reuse options face. The water treatment pilot process utilized: (1) warm precipitation softening to remove hardness and silica, (2) evaporative cooling to meet downstream temperature limitations and facilitate removal of ammonia, and (3) reverse osmosis (RO) for removal of dissolved salts, boron, and organics. Pilot study results indicate that produced water from the San Ardo oilfield can be treated to meet project water quality goals. Approximately 600 mg/l of caustic and 100 mg/l magnesium dosing were required to meet the hardness and silica goals in the warm softening unit. Approximately 30% of the ammonia was removed in the cooling tower; additional ammonia could be removed by ion exchange or other methods if necessary. A brackish water reverse osmosis membrane was effective in removing total dissolved solids and organics at all pH levels evaluated; however, the boron treatment objective was only achieved at a pH of 10.5 and above.

Robert A. Liske

2006-07-31T23:59:59.000Z

345

Performance Profiles of Major Energy Producers 1995  

Gasoline and Diesel Fuel Update (EIA)

5) 5) Distribution Category UC-950 Performance Profiles of Major Energy Producers 1995 January 1997 Energy Information Administration Office of Energy Markets and End Use U.S. Department of Energy Washington, DC 20585 This report was prepared by the Energy Information Administration, the independent statistical and analytical agency within the Department of Energy. The information contained herein should not be construed as advocating or reflecting any policy position of the Department of Energy or any other organization. Energy Information Administration/ Performance Profiles of Major Energy Producers 1995 ii To download the Financial Reporting System 1977-1995 data files, access the Energy Information Center's FTP site, at ftp: //ftp.eia.doe.gov or access the Energy Information Administration's Home Page at http://www.eia.doe.gov.

346

Performance Profiles of Major Energy Producers 1996  

Gasoline and Diesel Fuel Update (EIA)

6) 6) Distribution Category UC-950 Performance Profiles of Major Energy Producers 1996 January 1998 Energy Information Administration Office of Energy Markets and End Use U.S. Department of Energy Washington, DC 20585 This report was prepared by the Energy Information Administration, the independent statistical and analytical agency within the U.S. Department of Energy. The information contained herein should be attributed to the Energy Information Administration and should not be construed as advocating or reflecting any policy position of the Department of Energy or any other organization. Energy Information Administration/ Performance Profiles of Major Energy Producers 1996 ii The Financial Reporting System 1977-1996 data files can be downloaded from the Energy Information

347

Performance Profiles of Major Energy Producers 1997  

Gasoline and Diesel Fuel Update (EIA)

7) 7) Distribution Category UC-950 Performance Profiles of Major Energy Producers 1997 January 1999 Energy Information Administration Office of Energy Markets and End Use U.S. Department of Energy Washington, DC 20585 This report was prepared by the Energy Information Administration, the independent statistical and analytical agency within the U.S. Department of Energy. The information contained herein should be attributed to the Energy Information Administration and should not be construed as advocating or reflecting any policy position of the Department of Energy or any other organization. Energy Information Administration/ Performance Profiles of Major Energy Producers 1997 ii The Financial Reporting System 1977-1997 data files can be downloaded from the Energy Information Administration's

348

Method for producing catalysts from coal  

DOE Patents [OSTI]

A method for producing catalysts from coal is provided comprising mixing an aqueous alkali solution with the coal, heating the aqueous mixture to treat the coal, drying the now-heated aqueous mixture, reheating the mixture to form carbonized material, cooling the mixture, removing excess alkali from the carbonized material, and recovering the carbonized material, wherein the entire process is carried out in controlled atmospheres, and the carbonized material is a hydrocracking or hydrodehalogenation catalyst for liquid phase reactions. The invention also provides for a one-step method for producing catalysts from coal comprising mixing an aqueous alkali solution with the coal to create a mixture, heating the aqueous mixture from an ambient temperature to a predetermined temperature at a predetermined rate, cooling the mixture, and washing the mixture to remove excess alkali from the treated and carbonized material, wherein the entire process is carried out in a controlled atmosphere. 1 fig.

Farcasiu, M.; Derbyshire, F.; Kaufman, P.B.; Jagtoyen, M.

1998-02-24T23:59:59.000Z

349

Method for producing catalysis from coal  

DOE Patents [OSTI]

A method for producing catalysts from coal is provided comprising mixing an aqueous alkali solution with the coal, heating the aqueous mixture to treat the coal, drying the now-heated aqueous mixture, reheating the mixture to form carbonized material, cooling the mixture, removing excess alkali from the carbonized material, and recovering the carbonized material, wherein the entire process is carried out in controlled atmospheres, and the carbonized material is a hydrocracking or hydrodehalogenation catalyst for liquid phase reactions. The invention also provides for a one-step method for producing catalysts from coal comprising mixing an aqueous alkali solution with the coal to create a mixture, heating the aqueous mixture from an ambient temperature to a predetermined temperature at a predetermined rate, cooling the mixture, and washing the mixture to remove excess alkali from the treated and carbonized material, wherein the entire process is carried out in a controlled atmosphere.

Farcasiu, Malvina (Pittsburgh, PA); Derbyshire, Frank (Lexington, KY); Kaufman, Phillip B. (Library, PA); Jagtoyen, Marit (Lexington, KY)

1998-01-01T23:59:59.000Z

350

Products Produced in Countries Other Than Iran  

U.S. Energy Information Administration (EIA) Indexed Site

April 25, 2013 April 25, 2013 Independent Statistics & Analysis www.eia.gov U.S. Department of Energy Washington, DC 20585 The eighth in a series of reports required by section 1245 (d) (4) (A) of the National Defense Authorization Act for Fiscal Year 2012 April 2013 U.S. Energy Information Administration | Availability and Price of Petroleum and Petroleum Products Produced in Countries Other Than Iran 1 Table of Contents March - April 2013 Update ........................................................................................................................... 2 Tables ............................................................................................................................................................ 4 Figures ......................................................................................................................................................... 10

351

Producing and Marketing High-Value Calves  

E-Print Network [OSTI]

carcasses. Oklahoma State University (Smith et al., 2000) and University of Arkansas (Troxel et al., 2001) researchers conducted livestock market surveys to determine factors that affect value in feeder cattle. Their data indicate that small... cattle that will produce calves with adequate muscling. Body condition. The Oklahoma study found that thin cattle received discounts of $9 to $10 per cwt when compared to cattle of average condition, and that fat cattle received discounts of $6...

Cleere, Jason; Boleman, Larry L.

2006-06-22T23:59:59.000Z

352

Process for producing furan from furfural aldehyde  

DOE Patents [OSTI]

A process of producing furan and derivatives thereof is disclosed. The process includes generating furfural aldehyde vapors and then passing those vapors over a zeolite catalyst at a temperature and for a residence time effective to decarbonylate the furfural aldehydes to form furans and derivatives thereof. The resultant furan vapors and derivatives are then separated. In a preferred form, the furfural aldehyde vapors are generated during the process of converting biomass materials to liquid and gaseous fuels.

Diebold, James P. (Lakewood, CO); Evans, Robert J. (Lakewood, CO)

1988-01-01T23:59:59.000Z

353

Method and apparatus for producing cryogenic targets  

DOE Patents [OSTI]

An improved method and apparatus are given for producing cryogenic inertially driven fusion targets in the fast isothermal freezing (FIF) method. Improved coupling efficiency and greater availability of volume near the target for diagnostic purposes and for fusion driver beam propagation result. Other embodiments include a new electrical switch and a new explosive detonator, all embodiments making use of a purposeful heating by means of optical fibers.

Murphy, James T. (Los Alamos, NM); Miller, John R. (Penfield, NY)

1984-01-01T23:59:59.000Z

354

Beneficial Reuse of San Ardo Produced Water  

SciTech Connect (OSTI)

This report summarizes the work performed from 1 April 2003 to 30 September 2003 and recommends the tasks to be performed during Phase II (Pilot Evaluation). During this period discussions were held with various water agencies regarding use of the treated produced water either directly or indirectly through a water trading arrangement. In particular, several discussions were held with Monterey County Water Resources Agency, that has been charged with the long-term management and preservation of water resources in Monterey County. The Agency is very supportive of the program. However, they would like to see water quality/cost estimate data for the treated produced water from the pilot study prior to evaluating water use/water trade options. The agency sent a letter encouraging the project team to perform the pilot study to evaluate feasibility of the project. In addition, the regulations related to use of the treated water for various applications were updated during this period. Finally, the work plan, health and safety plan and sample analyses plan for performing pilot study to treat the oilfield produced water were developed during this period.

Robert A. Liske

2003-09-26T23:59:59.000Z

355

Feedback control of HfO{sub 2} etch processing in inductively coupled Cl{sub 2}/N{sub 2}/Ar plasmas  

SciTech Connect (OSTI)

The etch rate of HfO{sub 2} etch processing has been feedback controlled in inductively coupled Cl{sub 2}/N{sub 2}/Ar plasmas. The ion current and the root mean square rf voltage on the wafer stage, which are measured using a commercial impedance meter connected to the wafer stage, are chosen as controlled variables because the positive-ion flux and ion energy incident upon the wafer surface are the key factors that determine the etch rate. Two 13.56 MHz rf generators are used to adjust the inductively coupled plasma power and bias power which control ion density and ion energy, respectively. The adopted HfO{sub 2} etch processing used rather low rf voltage. The ion-current value obtained by the power/voltage method is underestimated, so the neural-network model was developed to assist estimating the correct ion-current value. The experimental results show that the etch-rate variation of the closed-loop control is smaller than that of the open-loop control. However, the first wafer effect cannot be eliminated using closed-loop control and thus to achieve a constant etch rate, the chamber-conditioning procedure is required in this etch processing.

Lin Chaung; Leou, K.-C.; Li, T.-C.; Lee, L.-S.; Tzeng, P.-J. [Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan 30043 (China); Electronic Research and Service Organization, Industrial Technology Research Institute, Hsinchu, Taiwan 310 (China)

2008-09-15T23:59:59.000Z

356

Mechanism for atmosphere dependence of laser damage morphology in HfO{sub 2}/SiO{sub 2} high reflective films  

SciTech Connect (OSTI)

We show in this paper single-shot and multi-shot laser-induced damage thresholds (LIDTs) of HfO{sub 2}/SiO{sub 2} high reflective films (the reflectance = 99.9%) are affected by the presence of a water layer absorbed on the surface of the porous films. When the water layer was removed with the process of pumping, the single-shot LIDT measured in vacuum dropped to {approx}48% of that measured in air, while the multi-shot LIDT in vacuum dropped to {approx}47% of its atmospheric value for the high reflective films. Typical damage micrographs of the films in air and in vacuum were obtained, showing distinct damage morphologies. Such atmosphere dependence of the laser damage morphology was found to originate from that formation of a water layer on the surface of porous films could cause an increase of horizontal thermal conductivity and a reduction of vertical thermal conductivity. Moreover, laser-induced periodic ripple damages in air were found in the SiO{sub 2} layer from the micrographs. A model of deformation kinematics was used to illustrate the occurrence of the periodic ripple damage, showing that it could be attributed to a contraction of the HfO{sub 2} layer under irradiation by the 5-ns laser pulses in air.

Pu Yunti [Fine Optical Engineering Research Center, Chengdu 610041 (China); Department of Materials Science, Sichuan University, Chengdu 610064 (China); Ma Ping; Chen Songlin; Wang Gang; Pan Feng [Fine Optical Engineering Research Center, Chengdu 610041 (China); Zhu Jiliang; Sun Ping; Zhu Xiaohong; Zhu Jianguo; Xiao Dingquan [Department of Materials Science, Sichuan University, Chengdu 610064 (China)

2012-07-15T23:59:59.000Z

357

X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO{sub 2}/Si interface  

SciTech Connect (OSTI)

The presence of an ultrathin oxide layer at the high-k/SiO{sub 2} interface may result in an interfacial dipole related to the specific high-k dielectric used for the gate stacks. 1 nm HfO{sub 2}/x nmAl{sub 2}O{sub 3}/SiO{sub 2}/Si stacks with different x values (x=0, 0.4, 0.8, 1.2) have been prepared by atomic layer deposition. Using photoelectron spectroscopy, an Al-related interfacial dipole in the HfO{sub 2}/Al{sub 2}O{sub 3}/SiO{sub 2} gate stack has been identified. X-ray photoelectron spectroscopy analysis shows that the dipole is correlated with the formation of an interfacial Al-silicate. The dipole is located at the Al-silicate interface between Al{sub 2}O{sub 3} and SiO{sub 2}, and its strength increases with the increase in Al{sub 2}O{sub 3} thickness because of Al silicate growth. Such Al-related interfacial dipole should have potential applications in future positive metal-oxide-semiconductor devices.

Zhu, L. Q.; Barrett, N.; Jegou, P. [Groupe Photoemission, CEA/IRAMIS/SPCSI, F-91191 Gif-sur-Yvette (France); Martin, F.; Leroux, C.; Martinez, E.; Grampeix, H.; Renault, O.; Chabli, A. [CEA-LETI, MINATEC, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

2009-01-15T23:59:59.000Z

358

Temperature dependences of superconducting critical current density and upper critical field for V/sub 2/(Hf,Zr) multifilamentary wire  

SciTech Connect (OSTI)

The temperature dependences of the critical current density, J /SUB c/ , and the upper critical field, uH /SUB c2/ , have been studied for newly developed V/sub 2/(Hf,Zr) multifilamentary wires. At 4.2 K, a ..mu..H /SUB c2/ of 22 T and an overall J /SUB c/ of 1 x 10/sup 4/ A/cm/sup 2/ at 17 T are obtained for these wires. At 1.8 K, overall J /SUB c/ in 15 T of these wires are twice as large as that of the bronze-processed Nb/sub 3/Sn multifilamentary wire. The enhanced J /SUB c/ at reduced temperatures may be attributed to the rapid increase in ..mu..H /SUB c2/ by using the temperature scaling law of the pinning force density. ..mu..H /SUB c2/ measured in pulsed fields is about 28 T at 2.0 K. According to the temperature scaling law, the overall J /SUB c/ for 1.8 K and at 20 T is estimated to be 2 x 10/sup 4/ A/cm/sup 2/. Thus, the present V/sup 2/(Hf,Zr) multifilamentary wires are very promising for use of generating high magnetic fields in the superfluid liquid helium environment.

Inoue, K.; Kuroda, T.; Tachikawa, K.

1985-03-01T23:59:59.000Z

359

Method of producing a cellulase-containing cell-free fermentate produced from microorganism ATCC 55702  

DOE Patents [OSTI]

Bacteria which produce large amounts of cellulose-containing cell-free fermentate have been identified. The original bacterium (ATCC 55703) was genetically altered using nitrosoguanidine (MNNG) treatment to produce the enhanced cellulase producing bacterium (ATCC 55702), which was identified through replicate plating. ATCC 55702 has improved characteristics and qualities for the degradation of cellulosic waste materials for fuel production, food processing, textile processing, and other industrial applications. ATCC 55702 is an improved bacterial host for genetic manipulations using recombinant DNA techniques, and is less likely to destroy genetic manipulations using standard mutagenesis techniques. 5 figs.

Dees, H.C.

1998-05-26T23:59:59.000Z

360

Performance Profiles of Major Energy Producers 2001  

Gasoline and Diesel Fuel Update (EIA)

1) 1) Distribution Category UC-950 Performance Profiles of Major Energy Producers 2001 January 2003 Energy Information Administration Office of Energy Markets and End Use U.S. Department of Energy Washington, DC 20585 This report was prepared by the Energy Information Administration, the independent statistical and analytical agency within the U.S. Department of Energy. The information contained herein should be attributed to the Energy Information Administration and should not be construed as advocating or reflecting any policy position of the Department of Energy or any other organization. Contacts This report was prepared in the Office of Energy Markets and End Use of the Energy Information Administration

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

High ethanol producing derivatives of Thermoanaerobacter ethanolicus  

DOE Patents [OSTI]

Derivatives of the newly discovered microorganism Thermoanaerobacter ethanolicus which under anaerobic and thermophilic conditions continuously ferment substrates such as starch, cellobiose, glucose, xylose and other sugars to produce recoverable amounts of ethanol solving the problem of fermentations yielding low concentrations of ethanol using the parent strain of the microorganism Thermoanaerobacter ethanolicus are disclosed. These new derivatives are ethanol tolerant up to 10% (v/v) ethanol during fermentation. The process includes the use of an aqueous fermentation medium, containing the substrate at a substrate concentration greater than 1% (w/v).

Ljungdahl, Lars G. (Athens, GA); Carriera, Laura H. (Athens, GA)

1983-01-01T23:59:59.000Z

362

High ethanol producing derivatives of Thermoanaerobacter ethanolicus  

DOE Patents [OSTI]

Derivatives of the newly discovered microorganism Thermoanaerobacter ethanolicus which under anaerobic and thermophilic conditions continuously ferment substrates such as starch, cellobiose, glucose, xylose and other sugars to produce recoverable amounts of ethanol solving the problem of fermentations yielding low concentrations of ethanol using the parent strain of the microorganism Thermoanaerobacter ethanolicus are disclosed. These new derivatives are ethanol tolerant up to 10% (v/v) ethanol during fermentation. The process includes the use of an aqueous fermentation medium, containing the substrate at a substrate concentration greater than 1% (w/v).

Ljungdahl, L.G.; Carriera, L.H.

1983-05-24T23:59:59.000Z

363

Performance profiles of major energy producers 1989  

SciTech Connect (OSTI)

Performance Profiles of Major Energy Producers 1989 is the thirteenth annual report of the Energy Information Administration's (EIA) Financial Reporting System (FRS). The report examines financial and operating developments, with particular reference to the 23 major energy companies (the FRS companies'') required to report annually on Form EIA-28. Financial information is reported by major lines of business including oil and gas production, petroleum refining and marketing, and other energy operations. Domestic and international operations are examined separately in this report. It also traces key developments affecting the financial performance of major energy companies in 1989, as well as review of important trends.

Not Available

1991-01-23T23:59:59.000Z

364

Process for producing phenolic compounds from lignins  

DOE Patents [OSTI]

A process is described for the production of low molecular weight phenolic compounds from lignins through the pyrolysis of the lignins in the presence of a strong base. In a preferred embodiment, potassium hydroxide is present in an amount of from about 0.1% to about 5% by weight, the pyrolysis temperature is from about 400 C to about 600 C at atmospheric pressure, and the time period for substantial completion of the reaction is from about 1--3 minutes. Examples of low molecular weight phenolic compounds produced include methoxyphenols, non-methoxylated phenols, and mixtures thereof. 16 figs.

Agblevor, F.A.

1998-09-15T23:59:59.000Z

365

Method of producing .beta.-spodumene bodies  

DOE Patents [OSTI]

Beta-spodumene bodies and method of preparing the bodies that involves providing a uniform plastic batch of inorganic raw materials, organic binder, and vehicle, wherein the inorganic raw materials are composed of, in percent by weight, about 75% to 95% minerals, and about 5% to 25% glass. The batch is formed into a green body that is fired to produce a body composed substantially of beta-spodumene, and having a thermal expansion coefficient of <10.times.10.sup.-7 /.degree.C.(0-800.degree. C.), and a strength of .gtoreq.4 Ksi.

Chyung, Kenneth (Painted Post, NY); Day, J. Paul (Big Flats, NY); Holleran, Louis M. (Big Flats, NY); Olszewski, Anthony R. (Bath, NY)

1999-01-01T23:59:59.000Z

366

Carbene reactions produced by recoil excitation methods  

E-Print Network [OSTI]

FLUORINE REACTIONS IN THE CH2F2-OLEFIN-02 SYSTEM . . . . . . . . . . . . . . ~ . ~ . ~ . . 44 V-2, RELATIVE YIELDS OF PRODUCTS FROM SCAVENGED AND NON-SCAVENGED CH2C12 SYSTEMS RELATIVE YIELDS OF PRODUCTS FROM SCAVENGED AND NON-SCAVENGED CH3C1 SYSTEMS.... and phosphorus 6 produced by recoil methods. Carbene Chemistry ~Bk d. Carbenes are 'species which have a carbon atom that is directly bonded to only two other atoms by single bonds. This divalent char- acter of carbenes was fi. rst observed by Dumas...

Lowery, Kirby

2012-06-07T23:59:59.000Z

367

Effects of additive C{sub 4}F{sub 8} during inductively coupled BCl{sub 3}/C{sub 4}F{sub 8}/Ar plasma etching of TaN and HfO{sub 2} for gate stack patterning  

SciTech Connect (OSTI)

In this work, the authors investigated the etching characteristics of TaN and HfO{sub 2} layers for gate stack patterning in BCl{sub 3}/Ar and BCl{sub 3}/C{sub 4}F{sub 8}/Ar inductively coupled plasmas and the effects of C{sub 4}F{sub 8} addition on the etch selectivity of the TaN to the HfO{sub 2} layer. Addition of C{sub 4}F{sub 8} gas to the BCl{sub 3}/Ar chemistry improved the TaN/HfO{sub 2} etch selectivity because adding the C{sub 4}F{sub 8} gas enhances the formation of the CF{sub x}Cl{sub y} passivation layer on HfO{sub 2} surface and decreased the HfO{sub 2} etch rate more rapidly than the TaN etch rate in a disproportionate way. Reduction in the etch time for HfO{sub 2} layer also increases the TaN/HfO{sub 2} etch selectivity because the etch time gets closer to the initiation time for HfO{sub 2} etching.

Ko, J. H.; Kim, D. Y.; Park, M. S.; Lee, N.-E.; Lee, S. S.; Ahn, Jinho; Mok, Hyungsoo [School of Advanced Materials Science and Engineering, and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746 (Korea, Republic of); Division of Advanced Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Electrical Engineering, Konkuk University, 1 Hwayangdong, Gwangjingu, Seoul 143-701 (Korea, Republic of)

2007-07-15T23:59:59.000Z

368

Selective etching of high-k HfO{sub 2} films over Si in hydrogen-added fluorocarbon (CF{sub 4}/Ar/H{sub 2} and C{sub 4}F{sub 8}/Ar/H{sub 2}) plasmas  

SciTech Connect (OSTI)

Inductively coupled hydrogen-added fluorocarbon (CF{sub 4}/Ar/H{sub 2} and C{sub 4}F{sub 8}/Ar/H{sub 2}) plasmas were used to etch HfO{sub 2}, which is a promising high-dielectric-constant material for the gate of complementary metal-oxide-semiconductor devices. The etch rates of HfO{sub 2} and Si were drastically changed depending on the additive-H{sub 2} flow rate in C{sub 4}F{sub 8}/Ar/H{sub 2} plasmas. The highly selective etching of HfO{sub 2} over Si was done in the condition with an additive-H{sub 2} flow rate, where the Si surface was covered with the fluorocarbon polymer. The results of x-ray photoelectron spectroscopy indicated that the carbon content of the selectively etched HfO{sub 2} surface was extremely low compared with the preetched surface contaminated by adventitious hydrocarbon in atmosphere. In the gas phase of the C{sub 4}F{sub 8}/Ar/H{sub 2} plasmas, Hf hydrocarbide molecules such as metal-organic compounds and Hf hydrofluoride were detected by a quadrupole mass analyzer. These findings indicate that the fluorine species, carbon, and hydrogen can work to etch HfO{sub 2} and that the carbon species also plays an important role in selective etching of HfO{sub 2} over Si.

Takahashi, Kazuo; Ono, Kouichi [Department of Aeronautics and Astronautics, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)

2006-05-15T23:59:59.000Z

369

Method of producing particulate-reinforced composites and composties produced thereby  

DOE Patents [OSTI]

A process for producing particle-reinforced composite materials through utilization of an in situ reaction to produce a uniform dispersion of a fine particulate reinforcement phase. The process includes forming a melt of a first material, and then introducing particles of a second material into the melt and subjecting the melt to high-intenisty acoustic vibration. A chemical reaction initiates between the first and second materials to produce reaction products in the melt. The reaciton products comprise a solide particulate phase, and the high-intensity acoustic vibration fragments and/or separates the reaction products into solid particles that are dispersed in the melt and are smaller than the particles of the second material. Also encompassed are particles-reinforced composite materials produced by such a process.

Han, Qingyou; Liu, Zhiwei

2013-12-24T23:59:59.000Z

370

Method for producing and treating coal gases  

DOE Patents [OSTI]

A method of generating a de-sulphurized volatile matter and a relatively low Btu gas includes the initial step of pyrolyzing coal to produce volatile matter and a char. The volatile matter is fed to a first de-sulphurizer containing a de-sulphurizing agent to remove sulphur therefrom. At the same time, the char is gasified to produce a relatively low Btu gas. The low Btu gas is fed to a second de-sulphurizer containing the de-sulphurizing agent to remove sulphur therefrom. A regenerator is provided for removing sulphur from the de-sulphurizing agent. Portions of the de-sulphurizing agent are moved among the first de-sulphurizer, the second de-sulphurizer, and the regenerator such that the regenerator regenerates the de-sulphurizing agent. Preferably, the portions of the de-sulphurizing agent are moved from the second de-sulphurizer to the first de-sulphurizer, from the first de-sulphurizer to the regenerator, and from the regenerator to the second de-sulphurizer.

Calderon, Albert (P.O. Box 126, Bowling Green, OH 43402)

1990-01-01T23:59:59.000Z

371

A Laboratory Method of Producing High Potentials  

Science Journals Connector (OSTI)

Details are given of the experimental arrangement by which, using Tesla coils in oil, very high potentials have been produced and measured. Excited at the rate of 120 sparks per second Tesla coils have been operated at 3,000,000 volts in ordinary transformer oil at atmospheric pressure. In oil under a pressure of 500 pounds per square inch, voltages as high as 5,200,000 have been produced with intermittent excitation. These voltages (peak values) are measured by a simple capacity-potentiometer, in which an insulated electrode "picks up" a known fraction of the total voltage, this fractional voltage being measured by means of a sphere gap. Measurements are given of the voltage-distribution along Tesla coils. Calculations and measurements of the efficiency and power-output of such coils show that at 120 sparks per second, a coil operating at 5,000,000 volts provides sufficient power, if used to accelerate helium nuclei in a suitable vacuum-tube, to yield the equivalent of about 2,600 grams of radium.

G. Breit; M. A. Tuve; O. Dahl

1930-01-01T23:59:59.000Z

372

Method for producing small hollow spheres  

DOE Patents [OSTI]

A method for producing small hollow spheres of glass having an outer diameter ranging from about 100.mu. to about 500.mu. with a substantially uniform wall thickness in the range of about 0.5-20.mu.. The method involves introducing aqueous droplets of a glass-forming solution into a long vertical drop oven or furnace having varying temperature regions. In one embodiment, one of the temperature regions is lower than both the preceeding region and the subsequent region. One region utilizes a temperature of at least 200.degree. C. higher than the melting point of the glass-forming material in the solution and, for example, may be at least 3 times higher than the temperature of the preceeding region. In addition, there is a sharp temperature gradient between these regions. As each droplet of solution passes through a first region it forms into a gel membrane having a spherical shape and encapsulates the rest of the drop retained in the elastic outer surface and the water entrapped within diffuses rapidly through the thin gel membrane which causes more of the glass-forming material to go out of solution and is incorporated into the gel membrane causing it to grow in size and become hollow. thus produced hollow glass sphere has a sphericity, concentricity, and wall uniformity of better than 5%. The sphere is capable of retaining material of up to at least 100 atmospheres therein over long periods of time. In one embodiment.

Rosencwaig, Allen (Danville, CA); Koo, Jackson C. (San Ramon, CA); Dressler, John L. (Spring Valley, OH)

1981-01-01T23:59:59.000Z

373

Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties  

SciTech Connect (OSTI)

Thin film capacitors were fabricated by sputtering TiN-Y doped HfO{sub 2}-TiN stacks on silicon substrates. Yttrium was incorporated into the HfO{sub 2} layers by simultaneously sputtering from Y{sub 2}O{sub 3} and HfO{sub 2} sources. Electric polarization and relative permittivity measurements yield distinct ferroelectric properties as a result of low yttrium dopant concentrations in the range of 0.9-1.9 mol. %. Grazing incidence x-ray diffraction measurements show the formation of an orthorhombic phase in this range. Compared to atomic layer deposition films, the highest remanent polarization and the highest relative permittivity were obtained at significantly lower doping concentrations in these sputtered films.

Olsen, T. [NaMLab gGmbH, 01187 Dresden (Germany); Department of Electrical and Computer Engineering, University of Alberta, Edmonton T6G 2V4 (Canada); Schroeder, U.; Mueller, S.; Krause, A.; Martin, D.; Singh, A. [NaMLab gGmbH, 01187 Dresden (Germany); Mueller, J. [Fraunhofer CNT, 01099 Dresden (Germany); Geidel, M. [Institute of Semiconductors and Microsystems, Technische Universitaet Dresden, 01062 Dresden (Germany); Mikolajick, T. [NaMLab gGmbH, 01187 Dresden (Germany); Institute of Semiconductors and Microsystems, Technische Universitaet Dresden, 01062 Dresden (Germany)

2012-08-20T23:59:59.000Z

374

Green method to produce propylene oxide  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Materials Materials Argonne National Laboratory Center for Nanoscale Materials U.S. Department of Energy Search CNM ... Search Argonne Home > Center for Nanoscale Materials > CNM Home About CNM Research Facilities People For Users Publications News & Highlights News Research Highlights Newsletters CNM Images on Flickr Events Jobs CNM Users Organization Contact Us Other DOE Nanoscale Science Research Centers Green method to produce propylene oxide conversion of propylene to polyene oxide via silver nanoclusters Simulation of propylene to propylene oxide conversion via silver nanoclusters supported on an alumina surface. Propylene oxide is an important chemical whose current industrial production is energy intensive and environmentally unfriendly. Attempts to solve this problem by using catalysts based on bulk silver surfaces with

375

Performance Profiles of Major Energy Producers 1994  

Gasoline and Diesel Fuel Update (EIA)

4) 4) Distribution Category UC-950 Performance Profiles of Major Energy Producers 1994 January 1996 Energy Information Administration Office of Energy Markets and End Use U.S. Department of Energy Washington, DC 20585 This report was prepared by the Energy Information Administration, the independent statistical and analytical agency within the Department of Energy. The information contained herein should not be construed as advocating or reflecting any policy position of the Department of Energy or any other organization. Contacts This report was prepared in the Office of Energy Markets and End Use of the Energy Information Administration, U.S. Department of Energy, under the general direction of W. Calvin Kilgore. The project was directed by Mark E. Rodekohr, Director of the Energy Markets and Contingency Information Division (202) 586-1441, and Mary E. Northup, Chief of

376

Scientists produce transparent, light-harvesting material  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Transparent, light-harvesting material Transparent, light-harvesting material Scientists produce transparent, light-harvesting material The material could be used in development of transparent solar panels. November 3, 2010 Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience, sustainable energy sources, to plasma physics and new materials. Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience, sustainable energy sources, to plasma physics and new materials. Contact James E. Rickman Communications Office (505) 665-9203

377

Integrated structural repair of a producing FPSO  

SciTech Connect (OSTI)

The state of the art in FPSO design is advancing rapidly. The long-term reliability of FPSO systems has improved as maintenance issues, have received greater emphasis in both new-builds and conversions. Despite this new emphasis, problems will still arise and repairs will still be required. Ultimately, the ability of any FPSO to stay on location and on production will depend on the scope of repairs which can be economically performed in-situ. In 1994 and 1995, Marathon Petroleum Indonesia Limited (MPIL) performed an in-situ repair on the FPSO Kakap Natuna. The scope and complexity of this work suggests there are few, if any, limits on in-situ structural repairs which can be successfully performed on a producing FPSO. The use of an integrated execution strategy for the repairs greatly reduced their cost.

Johnson, P.R. [Marathon Oil Co., Houston, TX (United States); Smith, T.A. [Aker Omega Inc., Houston, TX (United States)

1997-07-01T23:59:59.000Z

378

The economics of producing biodiesel from algae  

Science Journals Connector (OSTI)

Biodiesel is an alternative fuel for conventional diesel that is made from natural plant oils, animal fats, and waste cooking oils. This paper discusses the economics of producing biodiesel fuel from algae grown in open ponds. There is potential for large-scale production of biodiesel from algal farms on non-arable land; however, previous studies have failed to demonstrate an economically viable process that could be scalable to a commercialized industry. The problems include inconsistent and insufficient algal productivities, uncertain capital and operating costs, volatile market prices and unknown levels of government support. Although intensive work is being done on many technological issues, the economic studies and data are incomplete and out of date. This paper presents an updated financial analysis of the production and economic conditions that could have a profound effect on the success of this important alternative fuel production process.

Brian J. Gallagher

2011-01-01T23:59:59.000Z

379

System and method for producing metallic iron  

DOE Patents [OSTI]

A hearth furnace for producing metallic iron material has a furnace housing having a drying/preheat zone, a conversion zone, a fusion zone, and optionally a cooling zone, the conversion zone is between the drying/preheat zone and the fusion zone. A moving hearth is positioned within the furnace housing. A hood or separation barrier within at least a portion of the conversion zone, fusion zone or both separates the fusion zone into an upper region and a lower region with the lower region adjacent the hearth and the upper region adjacent the lower region and spaced from the hearth. An injector introduces a gaseous reductant into the lower region adjacent the hearth. A combustion region may be formed above the hood or separation barrier.

Bleifuss, Rodney L; Englund, David J; Iwasaki, Iwao; Fosnacht, Donald R; Brandon, Mark M; True, Bradford G

2013-09-17T23:59:59.000Z

380

Plasma treatment for producing electron emitters  

DOE Patents [OSTI]

Plasma treatment for producing carbonaceous field emission electron emitters is disclosed. A plasma of ions is generated in a closed chamber and used to surround the exposed surface of a carbonaceous material. A voltage is applied to an electrode that is in contact with the carbonaceous material. This voltage has a negative potential relative to a second electrode in the chamber and serves to accelerate the ions toward the carbonaceous material and provide an ion energy sufficient to etch the exposed surface of the carbonaceous material but not sufficient to result in the implantation of the ions within the carbonaceous material. Preferably, the ions used are those of an inert gas or an inert gas with a small amount of added nitrogen.

Coates, Don Mayo (Santa Fe, NM); Walter, Kevin Carl (Los Alamos, NM)

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Performance profiles of major energy producers 1993  

SciTech Connect (OSTI)

Performance Profiles of Major Energy Producers 1993 is the seventeenth annual report of the Energy Information Administration`s (EIA) Financial Reporting System (FRS). The report examines financial and operating developments in energy markets, with particular reference to the 25 major US energy companies required to report annually on Form EIA-28. Financial information is reported by major liens of business, including oil and gas production, petroleum refining and marketing, other energy operations, and nonenergy businesses. Financial and operating results are presented in the context of energy market developments with a view toward identifying changing corporate strategies and measuring the performance of ongoing operations both in the US and abroad. This year`s report analyzes financial and operating developments for 1993 (Part 1: Developments in 1993) and also reviews key developments during the 20 years following the Arab Oil Embargo of 1973--1974 (Part 2: Major Energy Company Strategies Since the Arab Oil Embargo). 49 figs., 104 tabs.

NONE

1995-01-01T23:59:59.000Z

382

Automated apparatus for producing gradient gels  

DOE Patents [OSTI]

Apparatus for producing a gradient gel which serves as a standard medium for a two-dimensional analysis of proteins, the gel having a density gradient along its height formed by a variation in gel composition, with the apparatus including first and second pumping means each including a plurality of pumps on a common shaft and driven by a stepping motor capable of providing small incremental changes in pump outputs for the gel ingredients, the motors being controlled, by digital signals from a digital computer, a hollow form or cassette for receiving the gel composition, means for transferring the gel composition including a filler tube extending near the bottom of the cassette, adjustable horizontal and vertical arms for automatically removing and relocating the filler tube in the next cassette, and a digital computer programmed to automatically control the stepping motors, arm movements, and associated sensing operations involving the filling operation.

Anderson, Norman L. (Clarendon Hills, IL)

1986-01-01T23:59:59.000Z

383

Broadband microwave burst produced by electron beams  

E-Print Network [OSTI]

Theoretical and experimental study of fast electron beams attracts a lot of attention in the astrophysics and laboratory. In the case of solar flares the problem of reliable beam detection and diagnostics is of exceptional importance. This paper explores the fact that the electron beams moving oblique to the magnetic field or along the field with some angular scatter around the beam propagation direction can generate microwave continuum bursts via gyrosynchrotron mechanism. The characteristics of the microwave bursts produced by beams differ from those in case of isotropic or loss-cone distributions, which suggests a new tool for quantitative diagnostics of the beams in the solar corona. To demonstrate the potentiality of this tool, we analyze here a radio burst occurred during an impulsive flare 1B/M6.7 on 10 March 2001 (AR 9368, N27W42). Based on detailed analysis of the spectral, temporal, and spatial relationships, we obtained firm evidence that the microwave continuum burst is produced by electron beams. For the first time we developed and applied a new forward fitting algorithm based on exact gyrosynchrotron formulae and employing both the total power and polarization measurements to solve the inverse problem of the beam diagnostics. We found that the burst is generated by a oblique beam in a region of reasonably strong magnetic field ($\\sim 200-300$ G) and the burst is observed at a quasi-transverse viewing angle. We found that the life time of the emitting electrons in the radio source is relatively short, $\\tau_l \\approx 0.5$ s, consistent with a single reflection of the electrons from a magnetic mirror at the foot point with the stronger magnetic field. We discuss the implications of these findings for the electron acceleration in flares and for beam diagnostics.

A. T. Altyntsev; G. D. Fleishman; G. -L. Huang; V. F. Melnikov

2007-12-16T23:59:59.000Z

384

Isotope production facility produces cancer-fighting actinium  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Cancer therapy gets a boost from new isotope Isotope production facility produces cancer-fighting actinium A new medical isotope project shows promise for rapidly producing major...

385

Biological pretreatment of produced water for reuse applications.  

E-Print Network [OSTI]

??Co-produced water from the oil and gas industry represents a significant waste stream in the United States. Produced water is characterized by high levels of… (more)

Kwon, Soondong, 1973-

2008-01-01T23:59:59.000Z

386

Jefferson Lab's upgraded Free-Electron Laser produces first ligh...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

upgraded Free-Electron Laser produces first light June 18, 2003 Researchers at the U.S. Department of Energy's Thomas Jefferson National Accelerator Facility have produced first...

387

Neutrons Reveal New Electrocatalyst Family for Producing Hydrogen...  

Office of Science (SC) Website

systems currently in use. Summary Most renewable energy is produced in the form of electricity, which is expensive to store and transport in large quantities. Producing hydrogen...

388

Lattice Distortions and Oxygen Vacancies Produced in Au+-Irradiated...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Lattice Distortions and Oxygen Vacancies Produced in Au+-Irradiated Nanocrystalline Cubic Zirconia. Lattice Distortions and Oxygen Vacancies Produced in Au+-Irradiated...

389

ASEM Green Independent Power Producers Network | Open Energy...  

Open Energy Info (EERE)

ASEM Green Independent Power Producers Network Jump to: navigation, search Name: ASEM Green Independent Power Producers Network Place: Germany Sector: Renewable Energy Product: A...

390

Comparison of the vacuum-ultraviolet radiation response of HfO{sub 2}/SiO{sub 2}/Si dielectric stacks with SiO{sub 2}/Si  

SciTech Connect (OSTI)

Vacuum ultraviolet (vuv) emitted during plasma processing degrades dielectrics by generating electron-hole pairs. VUV-induced charging of SiO{sub 2}/p-Si and HfO{sub 2}/SiO{sub 2}/p-Si dielectric stacks are compared. For SiO{sub 2}/p-Si, charging is observed for photon energies >15 eV by ionization of dielectric atoms from photoinjected electrons. In HfO{sub 2}/SiO{sub 2}/p-Si, charging is observed for photon >10 eV and is due to ionization by photoinjected electrons and by H{sup +} trapping in the HfO{sub 2}/SiO{sub 2} bulk. Hydrogen appears during annealing at the Si-SiO{sub 2} interface forming Si-H, which, during irradiation, is depassivated by photoinjected electrons. The authors conclude that dielectric charging in thin oxides (<10 nm) occurs more easily in HfO{sub 2}/SiO{sub 2} than in SiO{sub 2}.

Upadhyaya, G. S.; Shohet, J. L. [Plasma Processing and Technology Laboratory, and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2007-02-12T23:59:59.000Z

391

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells  

SciTech Connect (OSTI)

In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO{sub 2} interface chemistry and physics of resistive switching Ti/HfO{sub 2}/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in the conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO{sub 2} interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO{sub 2} interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.

Sowinska, Malgorzata, E-mail: sowinska@ihp-microelectronics.com; Bertaud, Thomas; Walczyk, Damian; Calka, Pauline; Walczyk, Christian [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Thiess, Sebastian [Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany); Alff, Lambert [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Schroeder, Thomas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

2014-05-28T23:59:59.000Z

392

Effects of N{sub 2} remote plasma nitridation on the structural and electrical characteristics of the HfO{sub 2} gate dielectrics grown using remote plasma atomic layer deposition methods  

SciTech Connect (OSTI)

The characteristics of remote plasma atomic layer deposited HfO{sub 2} on Si, which has a very thin SiO{sub 2} interlayer with and without remote plasma nitridation (RPN), have been investigated. Small amounts of N atoms were successfully incorporated by RPN pretreatment, in which the dominant emission species were excited atomic nitrogen (N{sup *}) and excited molecular nitrogen (N{sub 2}{sup *}), into a very thin SiO{sub 2} interlayer for the growth of HfO{sub 2} thin film. The thin ({approx}1.5 nm) intermediate layer containing nitrogen, which was prepared by sequential O{sub 2} and N{sub 2} remote plasma treatment of the Si substrate, can effectively suppress growth of the unintentional interface layer. In addition, it enhances the thermal stability and the resistance to oxygen diffusion during rapid thermal annealing. The HfO{sub 2} film containing the remote plasma nitrided SiO{sub 2} interlayer annealed at 800 deg. C showed a lower equivalent oxide thickness of {approx}1.89 nm and a lower leakage current density (3.78x10{sup -7} A cm{sup -2} at |V{sub G}-V{sub FB}|=2 V) compared to a non-nitrided sample of the same physical thickness. Also, we compared the characteristics of HfO{sub 2} films annealed in two different ambient environments, N{sub 2} and O{sub 2}.

Choi, Jihoon; Kim, Seokhoon; Kim, Jinwoo; Kang, Hyunseok; Jeon, Hyeongtag; Bae, Choelhwyi [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2006-07-15T23:59:59.000Z

393

Analysis of trap state densities at HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As interfaces  

SciTech Connect (OSTI)

HfO{sub 2} was deposited on n- and p-type In{sub 0.53}Ga{sub 0.47}As by chemical beam deposition. Interface trap densities (D{sub it}) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the D{sub it} to rise above 10{sup 13} cm{sup -2} eV{sup -1}. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n-type channels at room temperature. The apparent decrease of the D{sub it} close to the band edges is discussed.

Hwang, Yoontae; Engel-Herbert, Roman; Rudawski, Nicholas G.; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2010-03-08T23:59:59.000Z

394

Film properties of low temperature HfO{sub 2} grown with H{sub 2}O, O{sub 3}, or remote O{sub 2}-plasma  

SciTech Connect (OSTI)

A reduction of the deposition temperature is necessary for atomic layer deposition (ALD) on organic devices. HfO{sub 2} films were deposited by ALD on silicon substrates in a wide temperature range from 80 to 300?°C with tetrakis[ethylmethylamino]hafnium as metal precursor and H{sub 2}O, O{sub 3}, or an remote O{sub 2}-plasma as oxygen source. Growth rate and density were correlated to electrical properties like dielectric constant and leakage current of simple capacitor structures to evaluate the impact of different process conditions. Process optimizations were performed to reduce film imperfections visible at lower deposition temperatures. Additionally, the influence of postdeposition annealing on the structural and electrical properties was studied.

Richter, Claudia, E-mail: Claudia.Richter@namlab.com; Schenk, Tony; Schroeder, Uwe [NaMLab gGmbH, Noethnitzerstr. 64, 01187 Dresden (Germany); Mikolajick, Thomas [NaMLab gGmbH, Noethnitzerstr. 64, 01187 Dresden, Germany and Institut für Halbleiter und Mikrosystemtechnik, TU Dresden, Noethnitzerstr. 64, 01187 Dresden (Germany)

2014-01-15T23:59:59.000Z

395

Reduction of native oxides on InAs by atomic layer deposited Al{sub 2}O{sub 3} and HfO{sub 2}  

SciTech Connect (OSTI)

Thin high-{kappa} oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al{sub 2}O{sub 3} or HfO{sub 2} layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail.

Timm, R.; Fian, A.; Hjort, M.; Thelander, C.; Lind, E.; Andersen, J. N.; Wernersson, L.-E.; Mikkelsen, A. [Department of Physics, Nanometer Structure Consortium, Lund University, P.O. Box 118, 22 100 Lund (Sweden)

2010-09-27T23:59:59.000Z

396

Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces  

SciTech Connect (OSTI)

An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-04-01T23:59:59.000Z

397

Alternative Fuels Data Center: Biodiesel Producer Tax Refund  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Biodiesel Producer Tax Biodiesel Producer Tax Refund to someone by E-mail Share Alternative Fuels Data Center: Biodiesel Producer Tax Refund on Facebook Tweet about Alternative Fuels Data Center: Biodiesel Producer Tax Refund on Twitter Bookmark Alternative Fuels Data Center: Biodiesel Producer Tax Refund on Google Bookmark Alternative Fuels Data Center: Biodiesel Producer Tax Refund on Delicious Rank Alternative Fuels Data Center: Biodiesel Producer Tax Refund on Digg Find More places to share Alternative Fuels Data Center: Biodiesel Producer Tax Refund on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Biodiesel Producer Tax Refund A biodiesel producer may apply for a refund of Iowa state sales or use taxes paid on purchases. To qualify, the producer must be registered with

398

Process for producing large grain cadmium telluride  

DOE Patents [OSTI]

A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.

Hasoon, F.S.; Nelson, A.J.

1996-01-16T23:59:59.000Z

399

Number of Producing Gas Wells (Summary)  

U.S. Energy Information Administration (EIA) Indexed Site

Count) Count) Data Series: Wellhead Price Imports Price Price of Imports by Pipeline Price of LNG Imports Exports Price Price of Exports by Pipeline Price of LNG Exports Pipeline and Distribution Use Price Citygate Price Residential Price Commercial Price Industrial Price Vehicle Fuel Price Electric Power Price Proved Reserves as of 12/31 Reserves Adjustments Reserves Revision Increases Reserves Revision Decreases Reserves Sales Reserves Acquisitions Reserves Extensions Reserves New Field Discoveries New Reservoir Discoveries in Old Fields Estimated Production Number of Producing Gas Wells Gross Withdrawals Gross Withdrawals From Gas Wells Gross Withdrawals From Oil Wells Gross Withdrawals From Shale Gas Wells Gross Withdrawals From Coalbed Wells Repressuring Nonhydrocarbon Gases Removed Vented and Flared Marketed Production Natural Gas Processed NGPL Production, Gaseous Equivalent Dry Production Imports By Pipeline LNG Imports Exports Exports By Pipeline LNG Exports Underground Storage Capacity Underground Storage Injections Underground Storage Withdrawals Underground Storage Net Withdrawals LNG Storage Additions LNG Storage Withdrawals LNG Storage Net Withdrawals Total Consumption Lease and Plant Fuel Consumption Lease Fuel Plant Fuel Pipeline & Distribution Use Delivered to Consumers Residential Commercial Industrial Vehicle Fuel Electric Power Period:

400

Co-Produced Geothermal Systems | Open Energy Information  

Open Energy Info (EERE)

Produced Geothermal Systems Produced Geothermal Systems Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Print PDF Co-Produced Geothermal Systems Geothermal Technologies There are many types of Geothermal Technologies that take advantage of the earth's heat: Hydrothermal Systems Enhanced Geothermal Systems (EGS) Sedimentary Geothermal Systems Co-Produced Geothermal Systems Geothermal Direct Use Ground Source Heat Pumps Dictionary.png Co-Produced Geothermal System: Co-Produced water is the water that is produced as a by-product during oil and gas production. If there is enough water produced at a high enough temperature co-produced water can be utilized for electricity production. Other definitions:Wikipedia Reegle General Air Cooled Co-Produced geothermal system demonstration at RMOTC oil site.

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Alternative Fuels Data Center: Biodiesel Producer Fuel Tax  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Biodiesel Producer Biodiesel Producer Fuel Tax to someone by E-mail Share Alternative Fuels Data Center: Biodiesel Producer Fuel Tax on Facebook Tweet about Alternative Fuels Data Center: Biodiesel Producer Fuel Tax on Twitter Bookmark Alternative Fuels Data Center: Biodiesel Producer Fuel Tax on Google Bookmark Alternative Fuels Data Center: Biodiesel Producer Fuel Tax on Delicious Rank Alternative Fuels Data Center: Biodiesel Producer Fuel Tax on Digg Find More places to share Alternative Fuels Data Center: Biodiesel Producer Fuel Tax on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Biodiesel Producer Fuel Tax Municipalities, counties, or school districts producing biodiesel must file a return documenting their biodiesel production activities and pay $0.03 of

402

A theoretical study of the ion pair SN2 reaction between lithium isocyanates with methyl fluoride with inversion and retention mechanism  

Science Journals Connector (OSTI)

This paper is devoted to a detailed theoretical study of an ion pair SN2 reaction LiNCO+CH3F in the gas phase and in solution at the level of MP2(full)/6-31+G**//HF/6-31+G**. Two possible reaction mechanisms, inversion and retention, are discussed. There are eight possible reaction pathways. The inversion mechanism is more favorable no matter in the gas phase or in solution based on analyses of the transition structures. Methyl isocyanate should form preferentially in the gas phase and more stable methyl cyanate is the main product in solution. The retardation of the reaction in solvents was attributed to the difference in solvation in the separated reactants and in the transition state.

Hua-jie Zhu; Yi Ren; Jie Ren

2004-01-01T23:59:59.000Z

403

JOURNAL OF MATERIALS SCIENCE LETTERS 15 (1996) 1294-1296 New ternary fluoride with K2NiF4-type structure in CsF-CaF2 system  

E-Print Network [OSTI]

JOURNAL OF MATERIALS SCIENCE LETTERS 15 (1996) 1294-1296 New ternary fluoride with K2NiF4-type size and the strucmral relationship between perovskite ABF3 and A2BF4 with K2NiF4-type structure, it might be possible to predict the appearance of the above phases in the AF-BF2 system. The compound K2NiF

Jo, Moon-Ho

404

NM WAIDS: A PRODUCED WATER QUALITY AND INFRASTRUCTURE GIS DATABASE FOR NEW MEXICO OIL PRODUCERS  

SciTech Connect (OSTI)

The New Mexico Water and Infrastructure Data System (NM WAIDS) seeks to alleviate a number of produced water-related issues in southeast New Mexico. The project calls for the design and implementation of a Geographical Information System (GIS) and integral tools that will provide operators and regulators with necessary data and useful information to help them make management and regulatory decisions. The major components of this system are: (1) databases on produced water quality, cultural and groundwater data, oil pipeline and infrastructure data, and corrosion information, (2) a web site capable of displaying produced water and infrastructure data in a GIS or accessing some of the data by text-based queries, (3) a fuzzy logic-based, site risk assessment tool that can be used to assess the seriousness of a spill of produced water, and (4) a corrosion management toolkit that will provide operators with data and information on produced waters that will aid them in deciding how to address corrosion issues. The various parts of NM WAIDS will be integrated into a website with a user-friendly interface that will provide access to previously difficult-to-obtain data and information. Primary attention during the first six months of this project has been focused on creating the water quality databases for produced water and surface water, along with collection of corrosion information and building parts of the corrosion toolkit. Work on the project to date includes: (1) Creation of a water quality database for produced water analyses. The database was compiled from a variety of sources and currently has over 4000 entries for southeast New Mexico. (2) Creation of a web-based data entry system for the water quality database. This system allows a user to view, enter, or edit data from a web page rather than having to directly access the database. (3) Creation of a semi-automated data capturing system for use with standard water quality analysis forms. This system improves the accuracy and speed of water quality data entry. (4) Acquisition of ground water data from the New Mexico State Engineer's office, including chloride content and TDS (Total Dissolved Solids) for over 30,000 data points in southeast New Mexico. (5) Creation of a web-based scale prediction tool, again with a web-based interface, that uses two common scaling indices (Stiff-Davis and Oddo-Thomson) to predict the likelihood of scaling. This prediction tool can either run from user input data, or the user can select samples from the water analysis database. (6) Creation of depth-to-groundwater maps for the study area. (7) Analysis of water quality data by formation. (8) Continuation of efforts to collect produced water quality information from operators in the southeast New Mexico area. (9) Qualitative assessment of produced water from various formations regarding corrosivity. (10) Efforts at corrosion education in the region through operator visits. Future work on this project will include: (11) Development of an integrated web and GIS interface for all the information collected in this effort. (12) Continued development of a fuzzy logic spill risk assessment tool that was initially developed prior to this project. Improvements will include addition of parameters found to be significant in determining the impact of a brine spill at a specific site. (13) Cleanup and integration of water quality databases. (14) Compilation of both hard copy and online corrosion toolkit material.

Martha Cather; Robert Lee; Ibrahim Gundiler; Andrew Sung; Naomi Davidson; Ajeet Kumar Reddy; Mingzhen Wei

2003-04-01T23:59:59.000Z

405

NM WAIDS: A PRODUCED WATER QUALITY AND INFRASTRUCTURE GIS DATABASE FOR NEW MEXICO OIL PRODUCERS  

SciTech Connect (OSTI)

The New Mexico Water and Infrastructure Data System (NM WAIDS) seeks to alleviate a number of produced water-related issues in southeast New Mexico. The project calls for the design and implementation of a Geographical Information System (GIS) and integral tools that will provide operators and regulators with necessary data and useful information to help them make management and regulatory decisions. The major components of this system are: (1) Databases on produced water quality, cultural and groundwater data, oil pipeline and infrastructure data, and corrosion information. (2) A web site capable of displaying produced water and infrastructure data in a GIS or accessing some of the data by text-based queries. (3) A fuzzy logic-based, site risk assessment tool that can be used to assess the seriousness of a spill of produced water. (4) A corrosion management toolkit that will provide operators with data and information on produced waters that will aid them in deciding how to address corrosion issues. The various parts of NM WAIDS will be integrated into a website with a user-friendly interface that will provide access to previously difficult-to-obtain data and information. Primary attention during the first six months of this project was focused on creating the water quality databases for produced water and surface water, along with collecting of corrosion information and building parts of the corrosion toolkit. Work on the project to date includes: (1) Creation of a water quality database for produced water analyses. The database was compiled from a variety of sources and currently has over 7000 entries for New Mexico. (2) Creation of a web-based data entry system for the water quality database. This system allows a user to view, enter, or edit data from a web page rather than having to directly access the database. (3) Creation of a semi-automated data capturing system for use with standard water quality analysis forms. This system improves the accuracy and speed of water quality data entry. (4) Acquisition of ground water data from the New Mexico State Engineer's office, including chloride content and TDS (Total Dissolved Solids) for over 30,000 data points in southeast New Mexico. (5) Creation of a web-based scale prediction tool, again with a web-based interface, that uses two common scaling indices to predict the likelihood of scaling. This prediction tool can either run from user input data, or the user can select samples from the water analysis database. (6) Creation of depth-to-groundwater maps for the study area. (7) Analysis of water quality data by formation. (8) Continuation of efforts to collect produced water quality information from operators in the southeast New Mexico area. (9) Qualitative assessment of produced water from various formations regarding corrosivity. (10) Efforts at corrosion education in the region through operator visits. Future work on this project will include: (1) Development of an integrated web and GIS interface for all the information collected in this effort. (2) Continued development of a fuzzy logic spill risk assessment tool that was initially developed prior to this project. Improvements will include addition of parameters found to be significant in determining the impact of a brine spill at a specific site. (3) Compilation of both hard copy and online corrosion toolkit material.

Martha Cather; Robert Lee; Ibrahim Gundiler; Andrew Sung

2003-09-24T23:59:59.000Z

406

Alternative Fuels Data Center: Second Generation Biofuel Producer Tax  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Second Generation Second Generation Biofuel Producer Tax Credit to someone by E-mail Share Alternative Fuels Data Center: Second Generation Biofuel Producer Tax Credit on Facebook Tweet about Alternative Fuels Data Center: Second Generation Biofuel Producer Tax Credit on Twitter Bookmark Alternative Fuels Data Center: Second Generation Biofuel Producer Tax Credit on Google Bookmark Alternative Fuels Data Center: Second Generation Biofuel Producer Tax Credit on Delicious Rank Alternative Fuels Data Center: Second Generation Biofuel Producer Tax Credit on Digg Find More places to share Alternative Fuels Data Center: Second Generation Biofuel Producer Tax Credit on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Second Generation Biofuel Producer Tax Credit

407

ANALYSIS OF METHANE PRODUCING COMMUNITIES WITHIN UNDERGROUND COAL BEDS  

E-Print Network [OSTI]

ANALYSIS OF METHANE PRODUCING COMMUNITIES WITHIN UNDERGROUND COAL BEDS by Elliott Paul Barnhart ..................................................................................14 Ability of the Consortium to Produce Methane from Coal and Metabolites ................16.............................................................................................21 Coal and Methane Production

Maxwell, Bruce D.

408

SABIC's Carbon Fiber-Reinforced Material used to Produce the...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

SABIC's Carbon Fiber-Reinforced Material used to Produce the World's First 3D-Printed Vehicle at IMTS 2014 SABIC's Carbon Fiber-Reinforced Material used to Produce the World's...

409

EWO Meeting March 2013 Reliable Produc.on Planning of  

E-Print Network [OSTI]

by regions - ProducIon capacity of each plant and its producIon costs - Availability of key raw material - Inventory holding costs, inventory capacity, and ini - SaIsfy customer demand across all markets - Achieve mass balance across

Grossmann, Ignacio E.

410

Factors Affecting Cotton Producers' Choice of Marketing Outlet  

E-Print Network [OSTI]

In recent years, changes in government policies, supply and demand fundamentals and price patterns in the cotton market have led to several shifts in how producers market their cotton. This thesis examined producer cash marketing choices, including...

Pace, Jason 1979-

2012-08-16T23:59:59.000Z

411

Functionally gradient titanium-aluminide composites produced by laser cladding  

Science Journals Connector (OSTI)

The laser surface cladding of Ti-Al/TiB2...composites was investigated as a means of producing a functionally gradient material on a commercially pure Ti substrate. Single and double layers were produced. The pro...

J. H. Abboud; D. R. F. West; R. D. Rawlings

1994-07-01T23:59:59.000Z

412

How Much Energy Does Each State Produce? | Department of Energy  

Office of Environmental Management (EM)

Much Energy Does Each State Produce? How Much Energy Does Each State Produce? Energy Production in Trillion Btu: 2012 Click on each state to learn more about how much energy it...

413

USA Biomass Power Producers Alliance | Open Energy Information  

Open Energy Info (EERE)

Producers Alliance Producers Alliance Jump to: navigation, search Name USA Biomass Power Producers Alliance Place Sacramento, California Sector Biomass Product National trade association of biomass power producers in US. References USA Biomass Power Producers Alliance[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. USA Biomass Power Producers Alliance is a company located in Sacramento, California . References ↑ "USA Biomass Power Producers Alliance" Retrieved from "http://en.openei.org/w/index.php?title=USA_Biomass_Power_Producers_Alliance&oldid=352626" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages

414

Proposed replacement and operation of the anhydrous hydrogen fluoride supply and fluidized-bed reactor system at Building 9212. Draft environmental assessment  

SciTech Connect (OSTI)

The US Department of Energy (DOE) proposes to replace the existing anhydrous hydrogen fluoride (AHF) supply and fluidized-bed reactor systems for the Weapons Grade Highly Enriched Uranium Chemical Recovery and Recycle Facility, Building 9212, which is Iocated within the Y-12 Plant on DOE`s Oak Ridge Reservation in Oak Ridge, Tennessee. The current AHF supply and fluidized-bed reactor systems were designed and constructed more than 40 years ago. Because of their deteriorating condition, the corrosive nature of the materials processed, and the antiquated design philosophy upon which they are based, their long-term reliability cannot be assured. The current AHF supply system cannot mitigate an accidental release of AHF and vents fugitive AHF directly to the atmosphere during operations. the proposed action would reduce the risk of exposing the Y-12 Plant work force, the public, and the environment to an accidental release of AHF and would ensure the continuing ability of the Y-12 Plant to manufacture highly enriched uranium metal and process uranium from retired weapons for storage.

NONE

1995-03-01T23:59:59.000Z

415

Proposed replacement and operation of the anhydrous hydrogen fluoride supply and fluidized-bed chemical processing systems at Building 9212, Y-12 Plant, Oak Ridge, Tennessee  

SciTech Connect (OSTI)

The US Department of Energy (DOE) proposes to replace the existing anhydrous hydrogen fluoride (AHF) supply and fluidized-bed reactor systems for the Weapons Grade Highly Enriched Uranium Chemical Recovery and Recycle Facility, Building 9212, which is located within the Y-12 Plant on DOE`s Oak Ridge Reservation in Oak Ridge, Tennessee. The proposed replacement system would be based upon modern design criteria and safety analyses. The replacement AHF supply and distribution system equipment would be located on the existing Dock 8/8A at Building 9212. Utilities would be extended to the dock to service the process equipment. The following process equipment modules would be prefabricated for installation at the modified dock: an AHF cylinder enclosure, an AHF supply manifold and vaporizer module, an AHF sump tank and transfer skid, and an AHF supply off-gas scrubber assembly module. The fluidized-bed reactor system would be constructed in an area adjacent to the existing system in Building 9212. The replacement equipment would consist of a new reduction fluidized-bed reactor, a hydrofluorination fluidized-bed reactor, and associated air emission control equipment. The no-action alternative, which is the continued operation of the existing AHF supply and fluidized-bed reactor systems, was also evaluated.

NONE

1995-09-01T23:59:59.000Z

416

Low-Temperature and Co-Produced Resources Fact Sheet  

Broader source: Energy.gov [DOE]

Fact sheet on the U.S. Department of Energy's low-temperature and co-produced resources program area.

417

Cracking catalyst and method of producing the same  

SciTech Connect (OSTI)

This invention relates to exchanged ammoniated cogels having improved catalytic activity and process for producing the same.

Alafandi, H.; Stamires, D.

1980-12-16T23:59:59.000Z

418

Method for producing flame retardant porous products and products produced thereby  

DOE Patents [OSTI]

A method for fire retarding porous products used for thermal energy storage and products produced thereby is provided. The method includes treating the surface of the phase change material-containing porous products with a urea fire-retarding agent. Upon exposure to a flame, the urea forms an adduct with the phase change material which will not sustain combustion (is self-extinguishing) in air. No halogens or metal oxides are contained in the fire retardant, so no potentially noxious halide smoke or fumes are emitted if the product is continuously exposed to a flame. 1 fig.

Salyer, I.O.

1998-08-04T23:59:59.000Z

419

Method for producing flame retardant porous products and products produced thereby  

DOE Patents [OSTI]

A method for fire retarding porous products used for thermal energy storage and products produced thereby is provided. The method includes treating the surface of the phase change material-containing porous products with a urea fire-retarding agent. Upon exposure to a flame, the urea forms an adduct with the phase change material which will not sustain combustion (is self-extinguishing) in air. No halogens or metal oxides are contained in the fire retardant, so no potentially noxious halide smoke or fumes are emitted if the product is continuously exposed to a flame.

Salyer, Ival O. (Dayton, OH)

1998-08-04T23:59:59.000Z

420

Method for Producing Flame Retardant Porous Products and Products Produced Thereby  

DOE Patents [OSTI]

A method for fire retarding porous products used for thermal energy storage and products produced thereby is provided. The method includes treating the surface of the phase change material-containing porous products with a urea fire-retarding agent. Upon exposure to a flame, the urea forms an adduct with the phase change material which will not sustain combustion (is self-extinguishing) in air. No halogens or metal oxides are contained in the fire retardant, so no potentially noxious halide smoke or fumes are emitted if the product is continuously exposed to a flame.

Salyer, Ival O. (Dayton, OH)

1998-08-04T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Neutron producing target for accelerator based neutron source for  

E-Print Network [OSTI]

247 Neutron producing target for accelerator based neutron source for NCT V. Belov1 , S. Fadeev1, Russia Summary Neutron producing targets for novel accelerator based neutron source [1, 2] are presented Neutron producing target is one of the main elements of proposed accelerator based facility for neutron

Taskaev, Sergey Yur'evich

422

ccsd00001732, Development behavior of liquid plasma produced by  

E-Print Network [OSTI]

water with a melted NaCl is used as a test liquid. The liquid plasma is produced by the fundamental waveccsd­00001732, version 2 ­ 7 Nov 2004 Development behavior of liquid plasma produced by YAG laser the hazardous material called the environment material. Then, the plasma produced in liquid by the laser light

423

Impact of SF{sub 6} plasma treatment on performance of TaN-HfO{sub 2}-InP metal-oxide-semiconductor field-effect transistor  

SciTech Connect (OSTI)

In this work, the experimental impact of SF{sub 6} plasma treatment on the performance of InP metal-oxide-semiconductor field-effect transistors is presented. S and F are incorporated into atomic layer deposited HfO{sub 2} via postgate SF{sub 6} plasma treatment. The decreased subthreshold swing, gate leakage (I{sub g}), and increased effective channel mobility ({mu}{sub eff}) indicate that better interface and bulk oxide quality have been achieved with SF{sub 6} plasma treatment due to the formation of stronger Hf-F bonds. Drive current (I{sub d}), transconductance (G{sub m}), and effective channel mobility ({mu}{sub eff}) are improved by 22.3%, 35%, and 35%, respectively, compared with those of control devices.

Wang Yanzhen; Chen Yenting; Zhao Han; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758 (United States)

2011-01-24T23:59:59.000Z

424

NETL: Releases & Briefs - Producing hydrogen from water, without  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Producing Hydrogen from Water, without Electrolysis Producing Hydrogen from Water, without Electrolysis Electrochemical potential difference drives the reaction Electrochemical potential difference drives the reaction Researchers at DOE's National Energy Technology Laboratory and Argonne National Laboratory have patented a "Method of Generating Hydrogen by Catalytic Decomposition of Water." The invention potentially leapfrogs current capital and energy intensive processes that produce hydrogen from fossil fuels or through the electrolysis of water. According to co-inventor Arun Bose, "Hydrogen can be produced by electrolysis, but the high voltage requirements are a commercial barrier. The invention provides a new route for producing hydrogen from water by using mixed proton-electron conducting membranes." Water is

425

Trapping characteristics of Al{sub 2}O{sub 3}/HfO{sub 2}/SiO{sub 2} stack structure prepared by low temperature in situ oxidation in dc sputtering  

SciTech Connect (OSTI)

In this work, a dielectric stack with Al{sub 2}O{sub 3}/HfO{sub 2}/SiO{sub 2} (1.8 nm/1.6 nm/2.5 nm) trilayer structure prepared by low temperature in situ natural oxidation during dc sputtering is investigated. We study the electrical characteristics, including the dielectric leakage of 10{sup -8} A/cm{sup 2} at V{sub g}=-2 V, the current transport mechanism and trap distributions through the trilayer dielectric stack. The Fowler-Nordheim barrier height of the prepared Al{sub 2}O{sub 3}(phi{sub FN,Al{sub 2O{sub 3}}}) was extracted as 3.06+-0.15 eV. The current variation ratios [DELTAJ{sub g}/J{sub g}(0)] during constant voltage stressing were found to decrease with raising gate stress voltages for the trilayer stack in comparison with that [DELTAJ{sub g}/J{sub g}(0)] increase with raising gate stress voltages for the two-layer HfO{sub 2}/SiO{sub 2} stack. Shallow traps located in HfO{sub 2} were supposed to be major trapping centers within the trilayer stack. The proposed method of in situ oxidation during dc sputtering is of merit and low in process temperature. The trilayer dielectric stacks are an alternative option for nonvolatile memory application, especially under the consideration of low temperature limitation.

Chang, C.-H.; Hwu, J.-G. [Graduate Institute of Electronics Engineering/Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 10617 (China)

2009-05-01T23:59:59.000Z

426

Study on the Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interface and its impacts on Ge{sub 1?x}Sn{sub x} tunneling transistor  

SciTech Connect (OSTI)

In this paper, we employ first-principle calculation to investigate the Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interface, and then evaluate its impacts on Ge{sub 1?x}Sn{sub x} tunneling field-effect transistor (TFET). First-principle calculations of Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interfaces in the oxygen-rich process atmosphere indicate that the interface states originate from the Ge and Sn dangling bond, rather than Hf-bond. The total density of state shows that there are more interface states in the semiconductor bandgap with increasing Sn fraction. By further incorporating the material and interface parameters from density functional theory calculation into advanced device simulation, the electrical characteristics of Ge{sub 1?x}Sn{sub x} TFET are investigated. Removing the Sn atom from the first atom layer of Ge{sub 1?x}Sn{sub x} in device processes is found to be beneficial to reduce the degradations. For the degradation mechanisms, the trap-assisted-tunneling is the dominant mechanism at the low Sn fraction, and enhanced Shockley-Read-Hall recombination induced by traps becomes the dominant mechanism with increasing Sn fraction. The results are helpful for the interface optimization of Ge{sub 1?x}Sn{sub x} TFET.

Qiu, Yingxin; Wang, Runsheng, E-mail: ruhuang@pku.edu.cn, E-mail: r.wang@pku.edu.cn; Huang, Qianqian; Huang, Ru, E-mail: ruhuang@pku.edu.cn, E-mail: r.wang@pku.edu.cn [Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871 (China)

2014-06-21T23:59:59.000Z

427

Effect of current compliance and voltage sweep rate on the resistive switching of HfO{sub 2}/ITO/Invar structure as measured by conductive atomic force microscopy  

SciTech Connect (OSTI)

The electrical characterization of HfO{sub 2}/ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO{sub 2} surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO{sub 2}/ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

Wu, You-Lin, E-mail: ylwu@ncnu.edu.tw; Liao, Chun-Wei [Department of Electrical Engineering, National Chi Nan University, Puli, Nantou, Taiwan (China); Ling, Jing-Jenn [Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli, Nantou, Taiwan (China)

2014-06-16T23:59:59.000Z

428

Systematic Study of the Effect of La2O3 Incorporation on the Flatband Voltage and Si Band Bending in the TiN/HfO2 /SiO2 /p-Si Stack  

SciTech Connect (OSTI)

Recent studies have shown that La{sub 2}O{sub 3} films can be used to adjust the threshold voltage (V{sub t}) of NMOS Hf-based high-k/metal gate devices to desirable values, and a dipole at the high-k/SiO{sub 2} interface has been proposed to explain the V{sub t} shifts. In order to investigate the mechanism of the V{sub t} shift further, we have measured the flatband voltage (V{sub fb}) and Si band bending of technologically relevant TiN/HfO{sub 2}/La{sub 2}O{sub 3}/SiO{sub 2}/p-Si stacks where the thickness and position of the La{sub 2}O{sub 3} layer have been systematically varied. We observed systematic changes in V{sub fb}, Si band bending and the HfO{sub 2}-Si valence band offset as a function of La{sub 2}O{sub 3} layer thickness and position. These changes can be explained by a band alignment model that includes a dipole at the high-k/SiO{sub 2} interface, thus supporting the work of previous authors. In addition, we have derived the theoretical relationship between V{sub fb} and Si band bending, which agrees well with our experimental measurements.

M Di; E Bersch; R Clark; S Consiglio; G Leusink; A Diebold

2011-12-31T23:59:59.000Z

429

Alternative Fuels Data Center: Renewable Fuel Producer Excise Tax and  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Renewable Fuel Renewable Fuel Producer Excise Tax and Inspection Exemption to someone by E-mail Share Alternative Fuels Data Center: Renewable Fuel Producer Excise Tax and Inspection Exemption on Facebook Tweet about Alternative Fuels Data Center: Renewable Fuel Producer Excise Tax and Inspection Exemption on Twitter Bookmark Alternative Fuels Data Center: Renewable Fuel Producer Excise Tax and Inspection Exemption on Google Bookmark Alternative Fuels Data Center: Renewable Fuel Producer Excise Tax and Inspection Exemption on Delicious Rank Alternative Fuels Data Center: Renewable Fuel Producer Excise Tax and Inspection Exemption on Digg Find More places to share Alternative Fuels Data Center: Renewable Fuel Producer Excise Tax and Inspection Exemption on AddThis.com...

430

Alternative Fuels Data Center: Excise Tax Exemption for Biodiesel Produced  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Excise Tax Exemption Excise Tax Exemption for Biodiesel Produced by Schools to someone by E-mail Share Alternative Fuels Data Center: Excise Tax Exemption for Biodiesel Produced by Schools on Facebook Tweet about Alternative Fuels Data Center: Excise Tax Exemption for Biodiesel Produced by Schools on Twitter Bookmark Alternative Fuels Data Center: Excise Tax Exemption for Biodiesel Produced by Schools on Google Bookmark Alternative Fuels Data Center: Excise Tax Exemption for Biodiesel Produced by Schools on Delicious Rank Alternative Fuels Data Center: Excise Tax Exemption for Biodiesel Produced by Schools on Digg Find More places to share Alternative Fuels Data Center: Excise Tax Exemption for Biodiesel Produced by Schools on AddThis.com... More in this section... Federal State

431

Effective passivation of In{sub 0.2}Ga{sub 0.8}As by HfO{sub 2} surpassing Al{sub 2}O{sub 3} via in-situ atomic layer deposition  

SciTech Connect (OSTI)

High {kappa} gate dielectrics of HfO{sub 2} and Al{sub 2}O{sub 3} were deposited on molecular beam epitaxy-grown In{sub 0.2}Ga{sub 0.8}As pristine surface using in-situ atomic-layer-deposition (ALD) without any surface treatment or passivation layer. The ALD-HfO{sub 2}/p-In{sub 0.2}Ga{sub 0.8}As interface showed notable reduction in the interfacial density of states (D{sub it}), deduced from quasi-static capacitance-voltage and conductance-voltage (G-V) at room temperature and 100 Degree-Sign C. More significantly, the midgap peak commonly observed in the D{sub it}(E) of ALD-oxides/In{sub 0.2}Ga{sub 0.8}As is now greatly diminished. The midgap D{sub it} value decreases from {>=}15 Multiplication-Sign 10{sup 12} eV{sup -1} cm{sup -2} for ALD-Al{sub 2}O{sub 3} to {approx}2-4 Multiplication-Sign 10{sup 12} eV{sup -1} cm{sup -2} for ALD-HfO{sub 2}. Further, thermal stability at 850 Degree-Sign C was achieved in the HfO{sub 2}/In{sub 0.2}Ga{sub 0.8}As, whereas C-V characteristics of Al{sub 2}O{sub 3}/p-In{sub 0.2}Ga{sub 0.8}As degraded after the high temperature annealing. From in-situ x-ray photoelectron spectra, the AsO{sub x}, which is not the oxidized state from the native oxide, but is an induced state from adsorption of trimethylaluminum and H{sub 2}O, was found at the ALD-Al{sub 2}O{sub 3}/In{sub 0.2}Ga{sub 0.8}As interface, while that was not detected at the ALD-HfO{sub 2}/In{sub 0.2}Ga{sub 0.8}As interface.

Chang, Y. H.; Chiang, T. H. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, C. A.; Liu, Y. T.; Lin, H. Y.; Huang, M. L.; Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M. [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

2012-10-22T23:59:59.000Z

432

Produced Water R&D | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Shale Gas » Produced Water Shale Gas » Produced Water R&D Produced Water R&D Developed as a result of lessons learned from the NETL funded demonstration project, the Altela 600 water treatment system (shown above) treats about 25,000 gallons per day of produced and flowback water from hydraulic fracturing. [Photo courtesy of Altela Inc.] Developed as a result of lessons learned from the NETL funded demonstration project, the Altela 600 water treatment system (shown above) treats about 25,000 gallons per day of produced and flowback water from hydraulic fracturing. [Photo courtesy of Altela Inc.] Drilling and fracturing wells produce water along with the natural gas. Some of this water is returned fracture fluid and some is natural formation water. The actual water production of a particular well depends on the well

433

Vehicle Technologies Office: Fact #600: December 7, 2009 China Produced  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

0: December 7, 0: December 7, 2009 China Produced More Vehicles than the U.S. in 2008 to someone by E-mail Share Vehicle Technologies Office: Fact #600: December 7, 2009 China Produced More Vehicles than the U.S. in 2008 on Facebook Tweet about Vehicle Technologies Office: Fact #600: December 7, 2009 China Produced More Vehicles than the U.S. in 2008 on Twitter Bookmark Vehicle Technologies Office: Fact #600: December 7, 2009 China Produced More Vehicles than the U.S. in 2008 on Google Bookmark Vehicle Technologies Office: Fact #600: December 7, 2009 China Produced More Vehicles than the U.S. in 2008 on Delicious Rank Vehicle Technologies Office: Fact #600: December 7, 2009 China Produced More Vehicles than the U.S. in 2008 on Digg Find More places to share Vehicle Technologies Office: Fact #600:

434

Toxic methylmercury-producing microbes more widespread than realized...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

published in Environmental Science and Technology, explains why deadly methylated mercury is produced in areas where the neurotoxin's presence has puzzled researchers for...

435

Sandia National Laboratories: wind turbines produce rated power  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

turbines produce rated power Increasing the Scaled Wind Farm Technology Facility's Power Production On April 7, 2014, in Energy, Facilities, News, News & Events, Partnership,...

436

Organic Agriculture in Oklahoma: Catalysts and Roadblocks for Producers.  

E-Print Network [OSTI]

??This study surveyed certified and non-certified Oklahoma organic producers to examine their personal and farm characteristics, the reasons cited for their extent of involvement in… (more)

Mitchell, Shelley

2007-01-01T23:59:59.000Z

437

Electric Power Produced from Nuclear Reactor | National Nuclear...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Electric Power Produced from Nuclear Reactor | National Nuclear Security Administration Facebook Twitter Youtube Flickr RSS People Mission Managing the Stockpile Preventing...

438

Treatment of produced water using chemical and biological unit operations.  

E-Print Network [OSTI]

??Water generated along with oil and gas during coal bed methane and oil shale operations is commonly known as produced water, formation water, or oilfield… (more)

Li, Liang

2010-01-01T23:59:59.000Z

439

Producing Beneficial Materials from Biomass and Biodiesel Byproducts...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Biomass and Biofuels Biomass and Biofuels Find More Like This Return to Search Producing Beneficial Materials from Biomass and Biodiesel Byproducts Lawrence Berkeley National...

440

Evaluation of cirrus statistics produced by general circulation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

models for producing climatological cloud statistics by comparing them to the cirrus climatology compiled over the Southern Great Plains (SGP) ARM site. This evaluation includes...

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Scientists propose a solution to a critical barrier to producing...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

could provide essential improvements for future tokamaks that will need to produce self-sustaining fusion reactions, or "burning plasmas," to generate electric power. Such machines...

442

Upgrading of Pitch Produced by Mild Gasification of Subbituminous Cal  

Science Journals Connector (OSTI)

Upgrading of Pitch Produced by Mild Gasification of Subbituminous Cal ... Structural Characterization of Coal Tar Pitches Obtained by Heat Treatment under Different Conditions ...

Robert L. McCormick; Mahesh C. Jha

1994-03-01T23:59:59.000Z

443

Geothermal Energy Production with Co-produced and Geopressured...  

Broader source: Energy.gov (indexed) [DOE]

and Geopressured Resources (Fact Sheet), Geothermal Technologies Program (GTP) Geothermal Energy Production with Co-produced and Geopressured Resources (Fact Sheet),...

444

Making biomimetic complexes to produce hydrogen fuel | Center...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

biomimetic complexes to produce hydrogen fuel 4 Nov 2012 Souvik Roy, graduate student (Subtask 3, laboratory of Anne Jones). "I am involved mostly in mimicking Fe-hydrogenases,...

445

Compositions produced using an in situ heat treatment process  

DOE Patents [OSTI]

Methods for treating a subsurface formation and compositions produced therefrom are described herein. At least one method for producing hydrocarbons from a subsurface formation includes providing heat to the subsurface formation using an in situ heat treatment process. One or more formation particles may be formed during heating of the subsurface formation. Fluid that includes hydrocarbons and the formation particles may be produced from the subsurface formation. The formation particles in the produced fluid may include cenospheres and have an average particle size of at least 0.5 micrometers.

Roes, Augustinus Wilhelmus Maria; Nair, Vijay; Munsterman, Erwin Hunh; Van Bergen, Petrus Franciscus; Van Den Berg, Franciscus Gondulfus Antonius

2013-05-28T23:59:59.000Z

446

RPSEA Final Report Small Producers Program Development Strategies...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Final Report Small Producers Program Development Strategies for Maximizing East Texas Oil Field Production Contract No. 08123-16 July 15, 2014 Fred P. Wang Research Scientist...

447

Fluoride-Mediated Capture of a Noncovalent Bound State of a Reversible Covalent Enzyme Inhibitor: X-ray Crystallographic Analysis of an Exceptionally Potent [alpha]-Ketoheterocycle Inhibitor of Fatty Acid Amide Hydrolase  

SciTech Connect (OSTI)

Two cocrystal X-ray structures of the exceptionally potent {alpha}-ketoheterocycle inhibitor 1 (K{sub i} = 290 pM) bound to a humanized variant of rat fatty acid amide hydrolase (FAAH) are disclosed, representing noncovalently and covalently bound states of the same inhibitor with the enzyme. Key to securing the structure of the noncovalently bound state of the inhibitor was the inclusion of fluoride ion in the crystallization conditions that is proposed to bind the oxyanion hole precluding inhibitor covalent adduct formation with stabilization of the tetrahedral hemiketal. This permitted the opportunity to detect important noncovalent interactions stabilizing the binding of the inhibitor within the FAAH active site independent of the covalent reaction. Remarkably, noncovalently bound 1 in the presence of fluoride appears to capture the active site in the same 'in action' state with the three catalytic residues Ser241-Ser217-Lys142 occupying essentially identical positions observed in the covalently bound structure of 1, suggesting that this technique of introducing fluoride may have important applications in structural studies beyond inhibiting substrate or inhibitor oxyanion hole binding. Key insights to emerge from the studies include the observations that noncovalently bound 1 binds in its ketone (not gem diol) form, that the terminal phenyl group in the acyl side chain of the inhibitor serves as the key anchoring interaction overriding the intricate polar interactions in the cytosolic port, and that the role of the central activating heterocycle is dominated by its intrinsic electron-withdrawing properties. These two structures are also briefly compared with five X-ray structures of {alpha}-ketoheterocycle-based inhibitors bound to FAAH recently disclosed.

Mileni, Mauro; Garfunkle, Joie; Ezzili, Cyrine; Cravatt, Benjamin F.; Stevens, Raymond C.; Boger, Dale L. (Scripps)

2011-11-02T23:59:59.000Z

448

Nonadiabatic reactive scattering in atom+triatom systems: Nascent rovibronic distributions in F+H{sub 2}O{yields}HF+OH  

SciTech Connect (OSTI)

Crossed supersonic jet studies of F+H{sub 2}O{yields}HF+OH({sup 2}{Pi}{sub 3/2},{sup 2}{Pi}{sub 1/2}) have been performed under low density, single collision conditions at E{sub com}=6(2) kcal/mol, yielding rotational, vibrational, and spin-orbit state distributions in the nascent OH product by laser induced fluorescence methods. The lowest reaction barriers on the ground and first excited electronic surfaces are {Delta}E{approx_equal}4 kcal/mol and {Delta}E{approx_equal}25 kcal/mol, correlating with OH({sup 2}{Pi}{sub 3/2}) and OH({sup 2}{Pi}{sub 1/2}), respectively. Although only reactions on the ground state potential are Born-Oppenheimer allowed at the experimental collision energies, both ground and excited spin-orbit OH products are observed in a {sup 2}{Pi}{sub 3/2}:{sup 2}{Pi}{sub 1/2}=69(1)%:31(1)% branching ratio. This indicates the presence of strong nonadiabatic surface hopping interactions, in agreement with previous results for the F+D{sub 2}O{yields}DF+OD reaction. Despite clear differences in the rotational distributions between F+H{sub 2}O and F+D{sub 2}O isotopic reactions, the overall electronic branching into spin-orbit manifolds is nearly identical for both OH and OD products. Furthermore, when plotted versus total electronic+rotational energy, the nascent OH and OD populations each lie on single curves, with pronounced kinks in the Boltzmann plots suggestive of microscopic branching in the reaction dynamics. Such an equivalence of electronic and rotational energy release in the OH/OD products is consistent with predominantly nonadiabatic processes taking place in the immediate post-transition state region rather than asymptotically in the exit channel.

Ziemkiewicz, Michael; Nesbitt, David J. [JILA, National Institute of Standards and Technology, University of Colorado, Boulder, Colorado 80309-0440 (United States) and Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0440 (United States)

2009-08-07T23:59:59.000Z

449

Transporting Produce SafelyTransporting Produce Safely etting fresh produce from the field to the market is another step where care must be taken to keep the product safe.  

E-Print Network [OSTI]

points for microorganisms that cause disease or hasten spoilage. Ice used in the transport of produceTransporting Produce SafelyTransporting Produce Safely G etting fresh produce from the field contamination of the produce with microorganisms that could cause foodborne illness and also to hold the produce

Liskiewicz, Maciej

450

Making Food, Producing Sustainability Many contemporary approaches to environmental  

E-Print Network [OSTI]

Making Food, Producing Sustainability Abstract Many contemporary approaches to environmental sustainability focus on the end-consumer. In this panel, we explore lessons from small food producers for future development of HCI as an agency of sustainable ways of being. We argue that attention to the relationship

Parikh, Tapan S.

451

SaskPower Small Power Producers Program (Saskatchewan, Canada) | Department  

Broader source: Energy.gov (indexed) [DOE]

SaskPower Small Power Producers Program (Saskatchewan, Canada) SaskPower Small Power Producers Program (Saskatchewan, Canada) SaskPower Small Power Producers Program (Saskatchewan, Canada) < Back Eligibility Commercial Agricultural Industrial Residential Savings Category Solar Buying & Making Electricity Program Info Funding Source SaskPower State Saskatchewan Program Type Performance-Based Incentive Provider SaskPower The Small Power Producers Program accommodates customers who wish to generate up to 100 kilowatts (kW) of electricity for the purpose of offsetting power that would otherwise be purchased from SaskPower or for selling all of the power generated to SaskPower. At the beginning of the application process, you need to choose between one of two options: Sell all of the power you produce to SaskPower, or sell the

452

Financial News for Major Energy Producers, Third Quarter 2010  

Gasoline and Diesel Fuel Update (EIA)

Producers, Third Quarter 2010 Producers, Third Quarter 2010 Release Date: January 5, 2011 Next Release Date: To Be Determined Report Sections: Corporate and Petroleum Net Income Worldwide Oil and Gas Production Operations Worldwide Refining/Marketing Operations Worldwide Petroleum Capital Expenditures Worldwide Downstream Natural Gas and Power, and Chemicals Operations Supplemental Figures Supplemental Tables Download this Report: Full Report in PDF-Format Past Issues in PDF-Format Additional Information FRS Home Financial Terms Glossary Contacts Notes: The "Financial News for Major Energy Producers" is issued quarterly to report recent trends in the financial performance of the major energy producers. "Major energy producers" are respondents to Form EIA-28 (Financial Reporting System). All U.S.-based respondent companies that

453

Electric Power Produced from Nuclear Reactor | National Nuclear Security  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Electric Power Produced from Nuclear Reactor | National Nuclear Security Electric Power Produced from Nuclear Reactor | National Nuclear Security Administration Our Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Continuing Management Reform Countering Nuclear Terrorism About Us Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Media Room Congressional Testimony Fact Sheets Newsletters Press Releases Speeches Events Social Media Video Gallery Photo Gallery NNSA Archive Federal Employment Apply for Our Jobs Our Jobs Working at NNSA Blog Home > About Us > Our History > NNSA Timeline > Electric Power Produced from Nuclear Reactor Electric Power Produced from Nuclear Reactor December 20, 1951 Arco, ID Electric Power Produced from Nuclear Reactor

454

Nebraska shows potential to produce biofuel crops | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Nebraska shows potential to produce biofuel crops Nebraska shows potential to produce biofuel crops Nebraska shows potential to produce biofuel crops December 9, 2009 - 11:12am Addthis Joshua DeLung What are the key facts? Utilizing sites in Nevada that are currently used as buffers around roads for biofuel production instead could meet up to 22 percent of the state's energy requirements. That's 11 times the energy the state currently produces from biomass. Nebraska is known for its rolling cornfields in America's heartland, and agriculture is so thick in the state that people there can smell the fresh produce in the air. Many more in the U.S. might end up tasting the hearty vegetables as well. But one concern about new technologies that use crops for fuel is that those crops, and the land on which they're grown,

455

Coal seam natural gas producing areas (Louisiana) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Coal seam natural gas producing areas (Louisiana) Coal seam natural gas producing areas (Louisiana) Coal seam natural gas producing areas (Louisiana) < Back Eligibility Commercial Construction Developer Industrial Investor-Owned Utility Municipal/Public Utility Utility Program Info State Louisiana Program Type Environmental Regulations Siting and Permitting Provider Louisiana Department of Natural Resources In order to prevent waste and to avoid the drilling of unnecessary wells and to encourage the development of coal seam natural gas producing areas in Louisiana, the commissioner of conservation is authorized, as provided in this law, to establish a single unit to be served by one or more wells for a coal seam natural gas producing area. Without in any way modifying the authority granted to the commissioner to establish a drilling unit or

456

Nebraska shows potential to produce biofuel crops | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Nebraska shows potential to produce biofuel crops Nebraska shows potential to produce biofuel crops Nebraska shows potential to produce biofuel crops December 9, 2009 - 11:12am Addthis Joshua DeLung What are the key facts? Utilizing sites in Nevada that are currently used as buffers around roads for biofuel production instead could meet up to 22 percent of the state's energy requirements. That's 11 times the energy the state currently produces from biomass. Nebraska is known for its rolling cornfields in America's heartland, and agriculture is so thick in the state that people there can smell the fresh produce in the air. Many more in the U.S. might end up tasting the hearty vegetables as well. But one concern about new technologies that use crops for fuel is that those crops, and the land on which they're grown,

457

Methods and apparatus for producing and storing positrons and protons  

DOE Patents [OSTI]

Apparatus for producing and storing positrons may include a trap that defines an interior chamber therein and that contains an electric field and a magnetic field. The trap may further include a source material that includes atoms that, when activated by photon bombardment, become positron emitters to produce positrons. The trap may also include a moderator positioned adjacent the source material. A photon source is positioned adjacent the trap so that photons produced by the photon source bombard the source material to produce the positron emitters. Positrons from the positron emitters and moderated positrons from the moderator are confined within the interior chamber of the trap by the electric and magnetic fields. Apparatus for producing and storing protons are also disclosed.

Akers, Douglas W. (Idaho Falls, ID)

2010-07-06T23:59:59.000Z

458

When fish die, bacteria or the enzymes they produce invade the flesh of fish. This process produces toxic  

E-Print Network [OSTI]

ABSTRACT When fish die, bacteria or the enzymes they produce invade the flesh of fish. This process produces toxic compounds in the fish and the fish becomes spoiled. Fourier Transform Infrared spectroscopy neural network (ANN) for the development of an ANN based FT-IR Screening System for fish

Michel, Howard E.

459

Effect of sewage sludge content on gas quality and solid residues produced by cogasification in an updraft gasifier  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer Cogasification of sewage sludge with wood pellets in updraft gasifier was analysed. Black-Right-Pointing-Pointer The effects of sewage sludge content on the gasification process were examined. Black-Right-Pointing-Pointer Sewage sludge addition up to 30 wt.% reduces moderately the process performance. Black-Right-Pointing-Pointer At high sewage sludge content slagging and clinker formation occurred. Black-Right-Pointing-Pointer Solid residues produced resulted acceptable at landfills for non-hazardous waste. - Abstract: In the present work, the gasification with air of dehydrated sewage sludge (SS) with 20 wt.% moisture mixed with conventional woody biomass was investigated using a pilot fixed-bed updraft gasifier. Attention was focused on the effect of the SS content on the gasification performance and on the environmental impact of the process. The results showed that it is possible to co-gasify SS with wood pellets (WPs) in updraft fixed-bed gasification installations. However, at high content of sewage sludge the gasification process can become instable because of the very high ash content and low ash fusion temperatures of SS. At an equivalent ratio of 0.25, compared with wood pellets gasification, the addition of sewage sludge led to a reduction of gas yield in favor of an increase of condensate production with consequent cold gas efficiency decrease. Low concentrations of dioxins/furans and PAHs were measured in the gas produced by SS gasification, well below the limiting values for the exhaust gaseous emissions. NH{sub 3}, HCl and HF contents were very low because most of these compounds were retained in the wet scrubber systems. On the other hand, high H{sub 2}S levels were measured due to high sulfur content of SS. Heavy metals supplied with the feedstocks were mostly retained in gasification solid residues. The leachability tests performed according to European regulations showed that metals leachability was within the limits for landfilling inert residues. On the other hand, sulfate and chloride releases were found to comply with the limits for non-hazardous residues.

Seggiani, Maurizia, E-mail: m.seggiani@diccism.unipi.it [Department of Chemical Engineering, Industrial Chemistry and Material Science, University of Pisa, Largo Lucio Lazzarino 1, 56126 Pisa (Italy); Puccini, Monica, E-mail: m.puccini@diccism.unipi.it [Department of Chemical Engineering, Industrial Chemistry and Material Science, University of Pisa, Largo Lucio Lazzarino 1, 56126 Pisa (Italy); Raggio, Giovanni, E-mail: g.raggio@tiscali.it [Italprogetti Engineering SPA, Lungarno Pacinotti, 59/A, 56020 San Romano (Pisa) (Italy); Vitolo, Sandra, E-mail: s.vitolo@diccism.unipi.it [Department of Chemical Engineering, Industrial Chemistry and Material Science, University of Pisa, Largo Lucio Lazzarino 1, 56126 Pisa (Italy)

2012-10-15T23:59:59.000Z

460

Compositions produced using an in situ heat treatment process  

DOE Patents [OSTI]

Systems, methods, and heaters for treating a subsurface formation are described herein. At least one method for producing hydrocarbons from a subsurface formation includes providing heat to the subsurface formation using an in situ heat treatment process. One or more formation particles may be formed during heating of the subsurface formation. Fluid that includes hydrocarbons and the formation particles may be produced from the subsurface formation. The formation particles in the produced fluid may include cenospheres and have an average particle size of at least 0.5 micrometers.

Roes, Augustinus Wilhelmus Maria (Houston, TX); Nair, Vijay (Katy, TX); Munsterman, Erwin Henh (Amsterdam, NL); Van Bergen, Petrus Franciscus (Amsterdam, NL); Van Den Berg, Franciscus Gondulfus Antonius (Amsterdam, NL)

2009-10-20T23:59:59.000Z

Note: This page contains sample records for the topic "fluoride hf produced" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

The feasibility of producing alcohol fuels from biomass in Australia  

Science Journals Connector (OSTI)

Apart from cost, the net production of energy is the most important factor in evaluating the feasibility of producing renewable fuels from woody biomass. Unlike sugar, the effort required to make woody materials fermentable is considerable, and has been a major barrier to the use of such materials to produce renewable fuels. The Energy Profit Ratio (EPR) of fossil fuels is declining rapidly as conventional oil resources decline, but the EPR of biomass fuels is often not as high as commonly thought. I conclude that producing methanol from wood not