National Library of Energy BETA

Sample records for flexible electronic devices

  1. Semiconductor-based, large-area, flexible, electronic devices

    DOE Patents [OSTI]

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  2. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    SciTech Connect (OSTI)

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  3. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    SciTech Connect (OSTI)

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  4. Adhesive flexible barrier film, method of forming same, and organic electronic device including same

    DOE Patents [OSTI]

    Blizzard, John Donald; Weidner, William Kenneth

    2013-02-05

    An adhesive flexible barrier film comprises a substrate and a barrier layer disposed on the substrate. The barrier layer is formed from a barrier composition comprising an organosilicon compound. The adhesive flexible barrier film also comprises an adhesive layer disposed on the barrier layer and formed from an adhesive composition. A method of forming the adhesive flexible barrier film comprises the steps of disposing the barrier composition on the substrate to form the barrier layer, disposing the adhesive composition on the barrier layer to form the adhesive layer, and curing the barrier layer and the adhesive layer. The adhesive flexible barrier film may be utilized in organic electronic devices.

  5. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    DOE Patents [OSTI]

    Goyal, Amit

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  6. Flexible barrier film, method of forming same, and organic electronic device including same

    DOE Patents [OSTI]

    Blizzard, John; Tonge, James Steven; Weidner, William Kenneth

    2013-03-26

    A flexible barrier film has a thickness of from greater than zero to less than 5,000 nanometers and a water vapor transmission rate of no more than 1.times.10.sup.-2 g/m.sup.2/day at 22.degree. C. and 47% relative humidity. The flexible barrier film is formed from a composition, which comprises a multi-functional acrylate. The composition further comprises the reaction product of an alkoxy-functional organometallic compound and an alkoxy-functional organosilicon compound. A method of forming the flexible barrier film includes the steps of disposing the composition on a substrate and curing the composition to form the flexible barrier film. The flexible barrier film may be utilized in organic electronic devices.

  7. Polymer electronic devices and materials.

    SciTech Connect (OSTI)

    Schubert, William Kent; Baca, Paul Martin; Dirk, Shawn M.; Anderson, G. Ronald; Wheeler, David Roger

    2006-01-01

    Polymer electronic devices and materials have vast potential for future microsystems and could have many advantages over conventional inorganic semiconductor based systems, including ease of manufacturing, cost, weight, flexibility, and the ability to integrate a wide variety of functions on a single platform. Starting materials and substrates are relatively inexpensive and amenable to mass manufacturing methods. This project attempted to plant the seeds for a new core competency in polymer electronics at Sandia National Laboratories. As part of this effort a wide variety of polymer components and devices, ranging from simple resistors to infrared sensitive devices, were fabricated and characterized. Ink jet printing capabilities were established. In addition to promising results on prototype devices the project highlighted the directions where future investments must be made to establish a viable polymer electronics competency.

  8. Electronic security device

    DOE Patents [OSTI]

    Eschbach, Eugene A.; LeBlanc, Edward J.; Griffin, Jeffrey W.

    1992-01-01

    The present invention relates to a security device having a control box (12) containing an electronic system (50) and a communications loop (14) over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system (50) and a detection module (72) capable of registering changes in the voltage and phase of the signal transmitted over the loop.

  9. Electronic security device

    DOE Patents [OSTI]

    Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

    1992-03-17

    The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs.

  10. Electronic unit integrated into a flexible polymer body (Patent...

    Office of Scientific and Technical Information (OSTI)

    Electronic unit integrated into a flexible polymer body Citation Details In-Document Search Title: Electronic unit integrated into a flexible polymer body A peel and stick ...

  11. Stretchable and foldable electronic devices

    DOE Patents [OSTI]

    2013-10-08

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  12. Stretchable and foldable electronic devices

    DOE Patents [OSTI]

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2014-12-09

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  13. Ion plated electronic tube device

    DOE Patents [OSTI]

    Meek, T.T.

    1983-10-18

    An electronic tube and associated circuitry which is produced by ion plating techniques. The process is carried out in an automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  14. Mechanically flexible organic electroluminescent device with directional light emission

    DOE Patents [OSTI]

    Duggal, Anil Raj; Shiang, Joseph John; Schaepkens, Marc

    2005-05-10

    A mechanically flexible and environmentally stable organic electroluminescent ("EL") device with directional light emission comprises an organic EL member disposed on a flexible substrate, a surface of which is coated with a multilayer barrier coating which includes at least one sublayer of a substantially transparent organic polymer and at least one sublayer of a substantially transparent inorganic material. The device includes a reflective metal layer disposed on the organic EL member opposite to the substrate. The reflective metal layer provides an increased external quantum efficiency of the device. The reflective metal layer and the multilayer barrier coating form a seal around the organic EL member to reduce the degradation of the device due to environmental elements.

  15. A bamboo-inspired nanostructure design for flexible foldable and twistable energy storage devices

    SciTech Connect (OSTI)

    Sun, Yongming; Sills, Ryan B; Hu, Xianluo; Wei Seh, Zhi; Xiao, Xu; Xu, Henghui; Luo, Wei; Jin, Huanyu; Xin, Ying; Li, Tianqi; Zhang, Zhaoliang; Zhou, Jun; Cai, Wei; Huang, Yunhui; Cui, Yi

    2015-05-26

    Flexible energy storage devices are critical components for emerging flexible electronics. Electrode design is key in the development of all-solid-state supercapacitors with superior electrochemical performances and mechanical durability. We propose a bamboo-like graphitic carbon nanofiber with a well-balanced macro-, meso-, and microporosity, enabling excellent mechanical flexibility, foldability, and electrochemical performances. Our design is inspired by the structure of bamboos, where a periodic distribution of interior holes along the length and graded pore structure at the cross section not only enhance their stability under different mechanical deformation conditions but also provide a high surface area accessible to the electrolyte and low ion-transport resistance. The prepared nanofiber network electrode recovers its initial state easily after 3-folded manipulation. The mechanically robust membrane is explored as a free-standing electrode for a flexible all-solid-state supercapacitor. Without the need for extra support, the volumetric energy and power densities based on the whole device are greatly improved compared to the state-of-the-art devices. Furthermore, even under continuous dynamic operations of forceful bending (90) and twisting (180), the as-designed device still exhibits stable electrochemical performances with 100% capacitance retention. As a result, such a unique supercapacitor holds great promise for high-performance flexible electronics.

  16. A bamboo-inspired nanostructure design for flexible foldable and twistable energy storage devices

    SciTech Connect (OSTI)

    Sun, Yongming; Sills, Ryan B; Hu, Xianluo; Wei Seh, Zhi; Xiao, Xu; Xu, Henghui; Luo, Wei; Jin, Huanyu; Xin, Ying; Li, Tianqi; Zhang, Zhaoliang; Zhou, Jun; Cai, Wei; Huang, Yunhui; Cui, Yi

    2015-05-26

    Flexible energy storage devices are critical components for emerging flexible electronics. Electrode design is key in the development of all-solid-state supercapacitors with superior electrochemical performances and mechanical durability. We propose a bamboo-like graphitic carbon nanofiber with a well-balanced macro-, meso-, and microporosity, enabling excellent mechanical flexibility, foldability, and electrochemical performances. Our design is inspired by the structure of bamboos, where a periodic distribution of interior holes along the length and graded pore structure at the cross section not only enhance their stability under different mechanical deformation conditions but also provide a high surface area accessible to the electrolyte and low ion-transport resistance. The prepared nanofiber network electrode recovers its initial state easily after 3-folded manipulation. The mechanically robust membrane is explored as a free-standing electrode for a flexible all-solid-state supercapacitor. Without the need for extra support, the volumetric energy and power densities based on the whole device are greatly improved compared to the state-of-the-art devices. Furthermore, even under continuous dynamic operations of forceful bending (90°) and twisting (180°), the as-designed device still exhibits stable electrochemical performances with 100% capacitance retention. As a result, such a unique supercapacitor holds great promise for high-performance flexible electronics.

  17. A bamboo-inspired nanostructure design for flexible foldable and twistable energy storage devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sun, Yongming; Sills, Ryan B; Hu, Xianluo; Wei Seh, Zhi; Xiao, Xu; Xu, Henghui; Luo, Wei; Jin, Huanyu; Xin, Ying; Li, Tianqi; et al

    2015-05-26

    Flexible energy storage devices are critical components for emerging flexible electronics. Electrode design is key in the development of all-solid-state supercapacitors with superior electrochemical performances and mechanical durability. We propose a bamboo-like graphitic carbon nanofiber with a well-balanced macro-, meso-, and microporosity, enabling excellent mechanical flexibility, foldability, and electrochemical performances. Our design is inspired by the structure of bamboos, where a periodic distribution of interior holes along the length and graded pore structure at the cross section not only enhance their stability under different mechanical deformation conditions but also provide a high surface area accessible to the electrolyte and lowmore » ion-transport resistance. The prepared nanofiber network electrode recovers its initial state easily after 3-folded manipulation. The mechanically robust membrane is explored as a free-standing electrode for a flexible all-solid-state supercapacitor. Without the need for extra support, the volumetric energy and power densities based on the whole device are greatly improved compared to the state-of-the-art devices. Furthermore, even under continuous dynamic operations of forceful bending (90°) and twisting (180°), the as-designed device still exhibits stable electrochemical performances with 100% capacitance retention. As a result, such a unique supercapacitor holds great promise for high-performance flexible electronics.« less

  18. Electron emitting filaments for electron discharge devices

    DOE Patents [OSTI]

    Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

    1983-06-10

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600/sup 0/C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for nonuniform current distribution along the filament due to the emission of electrons from the filament.

  19. Electron emitting filaments for electron discharge devices

    DOE Patents [OSTI]

    Leung, Ka-Ngo; Pincosy, Philip A.; Ehlers, Kenneth W.

    1988-01-01

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600.degree. C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for non-uniform current distribution along the filament due to the emission of electrons from the filament.

  20. Electronic Educational Devices EED | Open Energy Information

    Open Energy Info (EERE)

    search Name: Electronic Educational Devices (EED) Place: Colorado Product: Colorado-USA-based manufacturer of higher-end watt meters for plug-in devices. References:...

  1. Stretchable polymer-based electronic device (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Stretchable polymer-based electronic device Title: Stretchable polymer-based electronic device A stretchable electronic circuit or electronic device and a polymer-based process to ...

  2. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect (OSTI)

    Seo, Won-Oh; Kim, Jihyun; Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol; Kim, Donghwan

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2 MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  3. Adhesion in flexible organic and hybrid organic/inorganic light emitting device and solar cells

    SciTech Connect (OSTI)

    Yu, D.; Kwabi, D.; Akogwu, O.; Du, J.; Oyewole, O. K.; Tong, T.; Anye, V. C.; Rwenyagila, E.; Asare, J.; Fashina, A.; Soboyejo, W. O.

    2014-08-21

    This paper presents the results of an experimental study of the adhesion between bi-material pairs that are relevant to organic light emitting devices, hybrid organic/inorganic light emitting devices, organic bulk heterojunction solar cells, and hybrid organic/inorganic solar cells on flexible substrates. Adhesion between the possible bi-material pairs is measured using force microscopy (AFM) techniques. These include: interfaces that are relevant to organic light emitting devices, hybrid organic/inorganic light emitting devices, bulk heterojunction solar cells, and hybrid combinations of titanium dioxide (TiO{sub 2}) and poly(3-hexylthiophene). The results of AFM measurements are incorporated into the Derjaguin-Muller-Toporov model for the determination of adhesion energies. The implications of the results are then discussed for the design of robust organic and hybrid organic/inorganic electronic devices.

  4. Nanoalloy Printed and Pulse-Laser Sintered Flexible Sensor Devices with Enhanced Stability and Materials Compatibility

    SciTech Connect (OSTI)

    Zhao, Wei; Rovore, Thomas; Weerawarne, Darshana; Osterhoudt, Gavin; Kang, Ning; Joseph, Pharrah; Luo, Jin; Shim, Bonggu; Poliks, Mark; Zhong, Chuan-Jian

    2015-06-02

    While conformal and wearable devices have become one of the most desired formats for printable electronics, it is challenging to establish a scalable process that produces stable conductive patterns but also uses substrates compatible with widely available wearable materials. Here, we describe findings of an investigation of a nanoalloy ink printed and pulsed laser sintered conductive patterns as flexible functional devices with enhanced stability and materials compatibility. While nanoparticle inks are desired for printable electronics, almost all existing nanoparticle inks are based on single-metal component, which, as an electronic element, is limited by its inherent stabilities of the metal such as propensity of metal oxidation and mobility of metal ions, especially in sintering processes. The work here has demonstrated the first example in exploiting plasmonic coupling of nanoalloys and pulsed-laser energy with controllable thermal penetration. The experimental and theoretical results have revealed clear correlation between the pulsed laser parameters and the nanoalloy structural characteristics. The superior performance of the resulting flexible sensor device, upon imparting nanostructured sensing materials, for detecting volatile organic compounds has significant implications to developing stable and wearable sensors for monitoring environmental pollutants and breath biomarkers. This simple “nanoalloy printing 'laser sintering' nanostructure printing” process is entirely general to many different sensor devices and nanostructured sensing materials, enabling the ability to easily construct sophisticated sensor array.

  5. Electronic & Magnetic Materials & Devices Capabilities | Argonne...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electronic & Magnetic Materials & Devices Capabilities Synthesis Colloidal chemistry and self-assembly techniques Complex oxide film synthesis via molecular beam epitaxy (DCA R450...

  6. Probing flexible conformations in molecular junctions by inelastic electron tunneling spectroscopy

    SciTech Connect (OSTI)

    Deng, Mingsen; Ye, Gui; Jiang, Jun; Cai, Shaohong; Sun, Guangyu

    2015-01-15

    The probe of flexible molecular conformation is crucial for the electric application of molecular systems. We have developed a theoretical procedure to analyze the couplings of molecular local vibrations with the electron transportation process, which enables us to evaluate the structural fingerprints of some vibrational modes in the inelastic electron tunneling spectroscopy (IETS). Based on a model molecule of Bis-(4-mercaptophenyl)-ether with a flexible center angle, we have revealed and validated a simple mathematical relationship between IETS signals and molecular angles. Our results might open a route to quantitatively measure key geometrical parameters of molecular junctions, which helps to achieve precise control of molecular devices.

  7. High temperature electronic gain device

    DOE Patents [OSTI]

    McCormick, J. Byron; Depp, Steven W.; Hamilton, Douglas J.; Kerwin, William J.

    1979-01-01

    An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.

  8. Repetitively pumped electron beam device

    DOE Patents [OSTI]

    Schlitt, L.G.

    1979-07-24

    Disclosed is an apparatus for producing fast, repetitive pulses of controllable length of an electron beam by phased energy storage in a transmission line of length matched to the number of pulses and specific pulse lengths desired. 12 figs.

  9. Repetitively pumped electron beam device

    DOE Patents [OSTI]

    Schlitt, Leland G. [Livermore, CA

    1979-07-24

    Apparatus for producing fast, repetitive pulses of controllable length of an electron beam by phased energy storage in a transmission line of length matched to the number of pulses and specific pulse lengths desired.

  10. Electronic cooling using thermoelectric devices

    SciTech Connect (OSTI)

    Zebarjadi, M.

    2015-05-18

    Thermoelectric coolers or Peltier coolers are used to pump heat in the opposite direction of the natural heat flux. These coolers have also been proposed for electronic cooling, wherein the aim is to pump heat in the natural heat flux direction and from hot spots to the colder ambient temperature. In this manuscript, we show that for such applications, one needs to use thermoelectric materials with large thermal conductivity and large power factor, instead of the traditionally used high ZT thermoelectric materials. We further show that with the known thermoelectric materials, the active cooling cannot compete with passive cooling, and one needs to explore a new set of materials to provide a cooling solution better than a regular copper heat sink. We propose a set of materials and directions for exploring possible materials candidates suitable for electronic cooling. Finally, to achieve maximum cooling, we propose to use thermoelectric elements as fins attached to copper blocks.

  11. Manipulating single electrons in semiconductor devices for quantum...

    Office of Scientific and Technical Information (OSTI)

    Manipulating single electrons in semiconductor devices for quantum computing. Citation Details In-Document Search Title: Manipulating single electrons in semiconductor devices for ...

  12. Electron holography of devices with epitaxial layers

    SciTech Connect (OSTI)

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0}?=?12.75?V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge}?=?18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L?=?30?nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  13. Towards reproducible, scalable lateral molecular electronic devices

    SciTech Connect (OSTI)

    Durkan, Colm Zhang, Qian

    2014-08-25

    An approach to reproducibly fabricate molecular electronic devices is presented. Lateral nanometer-scale gaps with high yield are formed in Au/Pd nanowires by a combination of electromigration and Joule-heating-induced thermomechanical stress. The resulting nanogap devices are used to measure the electrical properties of small numbers of two different molecular species with different end-groups, namely 1,4-butane dithiol and 1,5-diamino-2-methylpentane. Fluctuations in the current reveal that in the case of the dithiol molecule devices, individual molecules conduct intermittently, with the fluctuations becoming more pronounced at larger biases.

  14. Susceptor heating device for electron beam brazing

    DOE Patents [OSTI]

    Antieau, Susan M.; Johnson, Robert G. R.

    1999-01-01

    A brazing device and method are provided which locally apply a controlled amount of heat to a selected area, within a vacuum. The device brazes two components together with a brazing metal. A susceptor plate is placed in thermal contact with one of the components. A serrated pedestal supports the susceptor plate. When the pedestal and susceptor plate are in place, an electron gun irradiates an electron beam at the susceptor plate such that the susceptor plate is sufficiently heated to transfer heat through the one component and melt the brazing metal.

  15. Organic electronic devices using phthalimide compounds

    DOE Patents [OSTI]

    Hassan, Azad M.; Thompson, Mark E.

    2010-09-07

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  16. Organic electronic devices using phthalimide compounds

    DOE Patents [OSTI]

    Hassan, Azad M.; Thompson, Mark E.

    2012-10-23

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  17. Organic electronic devices using phthalimide compounds

    DOE Patents [OSTI]

    Hassan, Azad M.; Thompson, Mark E.

    2013-03-19

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  18. Stretchable polymer-based electronic device

    DOE Patents [OSTI]

    Maghribi, Mariam N.; Krulevitch, Peter A.; Davidson, James Courtney; Wilson, Thomas S.; Hamilton, Julie K.; Benett, William J.; Tovar, Armando R.

    2008-02-26

    A stretchable electronic circuit or electronic device and a polymer-based process to produce a circuit or electronic device containing a stretchable conducting circuit. The stretchable electronic apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body and at least one circuit line operatively connected to the stretchable polymer body. The circuit line extends in the longitudinal direction and has a longitudinal component that extends in the longitudinal direction and has an offset component that is at an angle to the longitudinal direction. The longitudinal component and the offset component allow the apparatus to stretch in the longitudinal direction while maintaining the integrity of the circuit line.

  19. Flexible pipe crawling device having articulated two axis coupling

    DOE Patents [OSTI]

    Zollinger, W.T.

    1994-05-10

    An apparatus is described for moving through the linear and non-linear segments of piping systems. The apparatus comprises a front leg assembly, a rear leg assembly, a mechanism for extension and retraction of the front and rear leg assembles with respect to each other, such as an air cylinder, and a pivoting joint. One end of the flexible joint attaches to the front leg assembly and the other end to the air cylinder, which is also connected to the rear leg assembly. The air cylinder allows the front and rear leg assemblies to progress through a pipe in inchworm' fashion, while the joint provides the flexibility necessary for the pipe crawler to negotiate non-linear piping segments. The flexible connecting joint is coupled with a spring-force suspension system that urges alignment of the front and rear leg assemblies with respect to each other. The joint and suspension system cooperate to provide a firm yet flexible connection between the front and rear leg assemblies to allow the pivoting of one with respect to the other while moving around a non-linear pipe segment, but restoring proper alignment coming out of the pipe bend. 4 figures.

  20. Flexible pipe crawling device having articulated two axis coupling

    DOE Patents [OSTI]

    Zollinger, William T.

    1994-01-01

    An apparatus for moving through the linear and non-linear segments of piping systems. The apparatus comprises a front leg assembly, a rear leg assembly, a mechanism for extension and retraction of the front and rear leg assembles with respect to each other, such as an air cylinder, and a pivoting joint. One end of the flexible joint attaches to the front leg assembly and the other end to the air cylinder, which is also connected to the rear leg assembly. The air cylinder allows the front and rear leg assemblies to progress through a pipe in "inchworm" fashion, while the joint provides the flexibility necessary for the pipe crawler to negotiate non-linear piping segments. The flexible connecting joint is coupled with a spring-force suspension system that urges alignment of the front and rear leg assemblies with respect to each other. The joint and suspension system cooperate to provide a firm yet flexible connection between the front and rear leg assemblies to allow the pivoting of one with respect to the other while moving around a non-linear pipe segment, but restoring proper alignment coming out of the pipe bend.

  1. New materials for electronic and solar devices

    SciTech Connect (OSTI)

    Not Available

    1990-12-21

    The partial contents are: New materials for electronic and solar devices; Applications of the photovoltaic systems; Technological steps in the solar cell production; Examples of the cell processing technology; Economic aspects of the PV panels production; Application of PV systems; Leading PV research centers and companies.

  2. Apparatus And Method Of Using Flexible Printed Circuit Board In Optical Transceiver Device

    DOE Patents [OSTI]

    Anderson, Gene R.; Armendariz, Marcelino G.; Bryan, Robert P.; Carson, Richard F.; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reysen, Bill H.

    2005-03-15

    This invention relates to a flexible printed circuit board that is used in connection with an optical transmitter, receiver or transceiver module. In one embodiment, the flexible printed circuit board has flexible metal layers in between flexible insulating layers, and the circuit board comprises: (1) a main body region orientated in a first direction having at least one electrical or optoelectronic device; (2) a plurality of electrical contact pads integrated into the main body region, where the electrical contact pads function to connect the flexible printed circuit board to an external environment; (3) a buckle region extending from one end of the main body region; and (4) a head region extending from one end of the buckle region, and where the head region is orientated so that it is at an angle relative to the direction of the main body region. The electrical contact pads may be ball grid arrays, solder balls or land-grid arrays, and they function to connect the circuit board to an external environment. A driver or amplifier chip may be adapted to the head region of the flexible printed circuit board. In another embodiment, a heat spreader passes along a surface of the head region of the flexible printed circuit board, and a window is formed in the head region of the flexible printed circuit board. Optoelectronic devices are adapted to the head spreader in such a manner that they are accessible through the window in the flexible printed circuit board.

  3. Graphene oxide overprints for flexible and transparent electronics

    SciTech Connect (OSTI)

    Rogala, M. Wlasny, I.; Kowalczyk, P. J.; Busiakiewicz, A.; Kozlowski, W.; Klusek, Z.; Sieradzki, Z.; Krucinska, I.; Puchalski, M.; Skrzetuska, E.

    2015-01-26

    The overprints produced in inkjet technology with graphene oxide dispersion are presented. The graphene oxide ink is developed to be fully compatible with standard industrial printers and polyester substrates. Post-printing chemical reduction procedure is proposed, which leads to the restoration of electrical conductivity without destroying the substrate. The presented results show the outstanding potential of graphene oxide for rapid and cost efficient commercial implementation to production of flexible electronics. Properties of graphene-based electrodes are characterized on the macro- and nano-scale. The observed nano-scale inhomogeneity of overprints' conductivity is found to be essential in the field of future industrial applications.

  4. Front and backside processed thin film electronic devices

    DOE Patents [OSTI]

    Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang; Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.

    2012-01-03

    This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  5. Nanotubes "line-up" to form films for flexible electronics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanotubes "line-up" to form films Nanotubes "line-up" to form films for flexible electronics A simple filtration process helped Rice University researchers create flexible, wafer-scale films of highly aligned and closely packed carbon nanotubes. April 10, 2016 Nanotubes "Line-Up" to form films for flexible electronics Bendable technology may come from nanotubes. Nanotubes "line-up" to form films for flexible electronics A simple filtration process helped

  6. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    SciTech Connect (OSTI)

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2015-01-06

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  7. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOE Patents [OSTI]

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2013-02-19

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  8. Electron-doping of graphene-based devices by hydrazine

    SciTech Connect (OSTI)

    Feng, Tingting; Xie, Dan; Wang, Dongxia; Wen, Lang; Wu, Mengqiang

    2014-12-14

    A facile and effective technique to tune the electronic properties of graphene is essential to facilitate the flexibility of graphene-based device performances. Here, the use of hydrazine as a solution-processable and effective n-type dopant for graphene is described. By dropping hydrazine solutions at different concentrations on a graphene surface, the Dirac point of graphene can be remarkably tuned. The transport behavior of graphene can be changed from p-type to n-type accordingly, demonstrating the controllable and adjustable doping effect of the hydrazine solutions. Accompanying the Dirac point shift is an enhanced hysteretic behavior of the graphene conductance, indicating an increasing trap state density induced by the hydrazine adsorbates. The electron-doping of graphene by the hydrazine solutions can be additionally confirmed with graphene/p-type silicon heterojunctions. The decrease of the junction current after the hydrazine treatment demonstrates an increase of the junction barrier between graphene and silicon, which is essentially due to the electron-doping of graphene and the resultant upshift of the Fermi level. Finally, partially doped graphene is realized and its electrical property is studied to demonstrate the potential of the hydrazine solutions to selectively electron-doping graphene for future electronic applications.

  9. Method for integrating microelectromechanical devices with electronic circuitry

    DOE Patents [OSTI]

    Montague, S.; Smith, J.H.; Sniegowski, J.J.; McWhorter, P.J.

    1998-08-25

    A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry. 13 figs.

  10. Method for integrating microelectromechanical devices with electronic circuitry

    DOE Patents [OSTI]

    Montague, Stephen; Smith, James H.; Sniegowski, Jeffry J.; McWhorter, Paul J.

    1998-01-01

    A method for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry.

  11. Robust Ag nanoplate ink for flexible electronics packaging

    SciTech Connect (OSTI)

    Li, Ruo -Zhou; Hu, Anming; Bridges, Denzel; Oakes, Ken D.; Peng, Rui; Tumuluri, Uma; Wu, Zili; Feng, Zhili; Zhang, Tong

    2015-03-24

    Nanoinks are currently a topic of heightened interest with respect to low temperature bonding processes and printable electronics. We have developed an innovative polyvinylpyrrolidone (PVP)-stabilized Ag nanoplate ink amenable to very strong low temperature packaging, and investigated the relationship between bonding strength and electrical conductivity post-bonding. PVP shell plastic deformations observed in failure microcracks with the formation of PVP nanofibers, revealed bonding strength at low temperatures (<250 °C) was primarily due to adhesive bonding. It is found that, utilizing photonic sintering, ~70 °C reduction of transformation temperature from adhesive to metallic bonding was achieved compared to that of thermal sintering. A numerical simulation was developed to better understand the influences of the light-induced heat generation, which demonstrated near-infrared light can facilitate sintering. Bonding strengths of 27 MPa were achieved at room temperatures, and 29.4 MPa at 210 °C with photonic sintering. Moreover, the anisotropic resistivity was observed with different thermal dependences. Furthermore, these results demonstrate Ag nanoplate inks have potential for low temperature 3D interconnections in lead-free microcircuits, flexible electronic packaging, and diverse sensing applications.

  12. Robust Ag nanoplate ink for flexible electronics packaging

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Ruo -Zhou; Hu, Anming; Bridges, Denzel; Oakes, Ken D.; Peng, Rui; Tumuluri, Uma; Wu, Zili; Feng, Zhili; Zhang, Tong

    2015-03-24

    Nanoinks are currently a topic of heightened interest with respect to low temperature bonding processes and printable electronics. We have developed an innovative polyvinylpyrrolidone (PVP)-stabilized Ag nanoplate ink amenable to very strong low temperature packaging, and investigated the relationship between bonding strength and electrical conductivity post-bonding. PVP shell plastic deformations observed in failure microcracks with the formation of PVP nanofibers, revealed bonding strength at low temperatures (<250 °C) was primarily due to adhesive bonding. It is found that, utilizing photonic sintering, ~70 °C reduction of transformation temperature from adhesive to metallic bonding was achieved compared to that of thermal sintering.more » A numerical simulation was developed to better understand the influences of the light-induced heat generation, which demonstrated near-infrared light can facilitate sintering. Bonding strengths of 27 MPa were achieved at room temperatures, and 29.4 MPa at 210 °C with photonic sintering. Moreover, the anisotropic resistivity was observed with different thermal dependences. Furthermore, these results demonstrate Ag nanoplate inks have potential for low temperature 3D interconnections in lead-free microcircuits, flexible electronic packaging, and diverse sensing applications.« less

  13. Phonon dispersion and quantization tuning of strained carbon nanotubes for flexible electronics

    SciTech Connect (OSTI)

    Gautreau, Pierre; Chu, Yanbiao; Basaran, Cemal; Ragab, Tarek

    2014-06-28

    Graphene and carbon nanotubes are materials with large potentials for applications in flexible electronics. Such devices require a high level of sustainable strain and an understanding of the materials electrical properties under strain. Using supercell theory in conjunction with a comprehensive molecular mechanics model, the full band phonon dispersion of carbon nanotubes under uniaxial strain is studied. The results suggest an overall phonon softening and open up the possibility of phonon quantization tuning with uniaxial strain. The change in phonon quantization and the resulting increase in electron-phonon and phonon-phonon scattering rates offer further explanation and theoretical basis to the experimental observation of electrical properties degradation for carbon nanotubes under uniaxial strain.

  14. Tunable Graphene Electronic Devices - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and the dopant used enable measurement of device properties for applications such as photoelectric characteristics, chemical specificity, spintronics and superconductivity. ...

  15. Electron beam directed energy device and methods of using same

    SciTech Connect (OSTI)

    Retsky, Michael W.

    2007-10-16

    A method and apparatus is disclosed for an electron beam directed energy device. The device consists of an electron gun with one or more electron beams. The device includes one or more accelerating plates with holes aligned for beam passage. The plates may be flat or preferably shaped to direct each electron beam to exit the electron gun at a predetermined orientation. In one preferred application, the device is located in outer space with individual beams that are directed to focus at a distant target to be used to impact and destroy missiles. The aimings of the separate beams are designed to overcome Coulomb repulsion. A method is also presented for directing the beams to a target considering the variable terrestrial magnetic field. In another preferred application, the electron beam is directed into the ground to produce a subsurface x-ray source to locate and/or destroy buried or otherwise hidden objects including explosive devices.

  16. Relativistic electron beam crossed-field device

    DOE Patents [OSTI]

    Bekefi, George; Orzechowski, Thaddeus J.

    1980-01-01

    An intense relativistic crossed field device in a nested configuration wherein a field emission cathode is nested within a segmented annular anode with an annular gap separating the two.

  17. Scalable Heuristics for Planning, Placement and Sizing of Flexible AC Transmission System Devices

    SciTech Connect (OSTI)

    Frolov, Vladmir; Backhaus, Scott N.; Chertkov, Michael

    2015-07-02

    Aiming to relieve transmission grid congestion and improve or extend feasibility domain of the operations, we build optimization heuristics, generalizing standard AC Optimal Power Flow (OPF), for placement and sizing of Flexible Alternating Current Transmission System (FACTS) devices of the Series Compensation (SC) and Static VAR Compensation (SVC) type. One use of these devices is in resolving the case when the AC OPF solution does not exist because of congestion. Another application is developing a long-term investment strategy for placement and sizing of the SC and SVC devices to reduce operational cost and improve power system operation. SC and SVC devices are represented by modification of the transmission line inductances and reactive power nodal corrections respectively. We find one placement and sizing of FACTs devices for multiple scenarios and optimal settings for each scenario simultaneously. Our solution of the nonlinear and nonconvex generalized AC-OPF consists of building a convergent sequence of convex optimizations containing only linear constraints and shows good computational scaling to larger systems. The approach is illustrated on single- and multi-scenario examples of the Matpower case-30 model.

  18. Roll-to-roll atomic layer deposition process for flexible electronics encapsulation applications

    SciTech Connect (OSTI)

    Maydannik, Philipp S. Kriinen, Tommi O.; Lahtinen, Kimmo; Cameron, David C.; Sderlund, Mikko; Soininen, Pekka; Johansson, Petri; Kuusipalo, Jurkka; Moro, Lorenza; Zeng, Xianghui

    2014-09-01

    At present flexible electronic devices are under extensive development and, among them, flexible organic light-emitting diode displays are the closest to a large market deployment. One of the remaining unsolved challenges is high throughput production of impermeable flexible transparent barrier layers that protect sensitive light-emitting materials against ambient moisture. The present studies deal with the adaptation of the atomic layer deposition (ALD) process to high-throughput roll-to-roll production using the spatial ALD concept. We report the development of such a process for the deposition of 20?nm thickness Al{sub 2}O{sub 3} diffusion barrier layers on 500?mm wide polymer webs. The process uses trimethylaluminum and water as precursors at a substrate temperature of 105?C. The observation of self-limiting film growth behavior and uniformity of thickness confirms the ALD growth mechanism. Water vapor transmission rates for 20?nm Al{sub 2}O{sub 3} films deposited on polyethylene naphthalate (PEN) substrates were measured as a function of substrate residence time, that is, time of exposure of the substrate to one precursor zone. Moisture permeation levels measured at 38?C/90% relative humidity by coulometric isostaticisobaric method were below the detection limit of the instrument (<5??10{sup ?4}?g/m{sup 2} day) for films coated at web moving speed of 0.25?m/min. Measurements using the Ca test indicated water vapor transmission rates ?5??10{sup ?6} g/m{sup 2} day. Optical measurements on the coated web showed minimum transmission of 80% in the visible range that is the same as the original PEN substrate.

  19. Electronic unit integrated into a flexible polymer body

    DOE Patents [OSTI]

    Krulevitch, Peter A.; Maghribi, Mariam N.; Benett, William J.; Hamilton, Julie K.; Rose, Klint A.; Davidson, James Courtney; Strauch, Mark S.

    2005-04-12

    A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit connected to the metal layer.

  20. Electronic Unit Integrated Into A Flexible Polymer Body

    DOE Patents [OSTI]

    Krulevitch, Peter A.; Maghribi, Mariam N.; Benett, William J.; Hamilton, Julie K.; Rose, Klint A.; Davidson, James Courtney; Strauch, Mark S.

    2006-01-31

    A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit connected to the metal layer.

  1. Electronic unit integrated into a flexible polymer body

    DOE Patents [OSTI]

    Krulevitch, Peter A.; Maghribi, Mariam N.; Benett, William J.; Hamilton, Julie K.; Rose, Klint A.; Davidson, James Courtney; Strauch, Mark S.

    2008-03-11

    A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit connected to the metal layer.

  2. Electronic unit integrated into a flexible polymer body

    DOE Patents [OSTI]

    Krulevitch, Peter A.; Maghribi, Mariam N.; Benett, William J.; Hamilton, Julie K.; Rose, Klint A.; Davidson, James Courtney; Strauch, Mark S.

    2006-04-18

    A peel and stick electronic system comprises a silicone body, and at least one electronic unit operatively connected to the silicone body. The electronic system is produce by providing a silicone layer on a substrate, providing a metal layer on the silicone layer, and providing at least one electronic unit connected to the metal layer.

  3. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOE Patents [OSTI]

    Black, Marcie R.

    2011-02-22

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  4. Optoelectronic devices utilizing materials having enhanced electronic transitions

    SciTech Connect (OSTI)

    Black, Marcie R.

    2013-04-09

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  5. Interface Surprises May Motivate Novel Oxide Electronic Devices

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Interface Surprises May Motivate Novel Oxide Electronic Devices Interface Surprises May Motivate Novel Oxide Electronic Devices NERSC Helps Corroborate Two Distinct Mechanisms in Ferroelectric Material September 23, 2014 Contact: Dawn Levy, levyd@ornl.gov,+1 865.576.6448 Complex oxides have long tantalized the materials science community for their promise in next-generation energy and information technologies. Complex oxide crystals combine oxygen atoms with assorted metals to produce unusual

  6. Method for integrating microelectromechanical devices with electronic circuitry

    DOE Patents [OSTI]

    Barron, Carole C.; Fleming, James G.; Montague, Stephen

    1999-01-01

    A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.

  7. Thin Film Electronic Devices with Conductive and Transparent Gas and

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Moisture Permeation Barriers - Energy Innovation Portal Solar Photovoltaic Solar Photovoltaic Electricity Transmission Electricity Transmission Advanced Materials Advanced Materials Find More Like This Return to Search Thin Film Electronic Devices with Conductive and Transparent Gas and Moisture Permeation Barriers National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary Transparent conducting (TC) materials are extensively used in electronics and

  8. Buffer layers and articles for electronic devices

    DOE Patents [OSTI]

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  9. Organic electronic devices with multiple solution-processed layers

    DOE Patents [OSTI]

    Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

    2015-08-04

    A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.

  10. dc-plasma-sprayed electronic-tube device

    DOE Patents [OSTI]

    Meek, T.T.

    1982-01-29

    An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  11. Electronic firing systems and methods for firing a device

    DOE Patents [OSTI]

    Frickey, Steven J.; Svoboda, John M.

    2012-04-24

    An electronic firing system comprising a control system, a charging system, an electrical energy storage device, a shock tube firing circuit, a shock tube connector, a blasting cap firing circuit, and a blasting cap connector. The control system controls the charging system, which charges the electrical energy storage device. The control system also controls the shock tube firing circuit and the blasting cap firing circuit. When desired, the control system signals the shock tube firing circuit or blasting cap firing circuit to electrically connect the electrical energy storage device to the shock tube connector or the blasting cap connector respectively.

  12. Electronic Durability of Flexible Transparent Films from Type-Specific Single-Wall Carbon Nanotubes

    SciTech Connect (OSTI)

    Harris, J; Iyer, S; Bernhardt, A; Huh, JY; Hudson, S; Fagan, J; Hobbie, E.

    2011-12-11

    The coupling between mechanical flexibility and electronic performance is evaluated for thin films of metallic and semiconducting single-wall carbon nanotubes (SWCNTs) deposited on compliant supports. Percolated networks of type-purified SWCNTs are assembled as thin conducting coatings on elastic polymer substrates, and the sheet resistance is measured as a function of compression and cyclic strain through impedance spectroscopy. The wrinkling topography, microstructure and transparency of the films are independently characterized using optical microscopy, electron microscopy, and optical absorption spectroscopy. Thin films made from metallic SWCNTs show better durability as flexible transparent conductive coatings, which we attribute to a combination of superior mechanical performance and higher interfacial conductivity.

  13. Influence of curvature on the device physics of thin film transistors on flexible substrates

    SciTech Connect (OSTI)

    Amalraj, Rex; Sambandan, Sanjiv

    2014-10-28

    Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature.

  14. Front and backside processed thin film electronic devices

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2010-10-12

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  15. Electrodes mitigating effects of defects in organic electronic devices

    DOE Patents [OSTI]

    Heller, Christian Maria Anton

    2008-05-06

    A compound electrode for organic electronic devices comprises a thin first layer of a first electrically conducting material and a second electrically conducting material disposed on the first layer. In one embodiment, the second electrically conducting material is formed into a plurality of elongated members. In another embodiment, the second material is formed into a second layer. The elongated members or the second layer has a thickness greater than that of the first layer. The second layer is separated from the first layer by a conducting material having conductivity less than at least the material of the first layer. The compound electrode is capable of mitigating adverse effects of defects, such as short circuits, in the construction of the organic electronic devices, and can be included in light-emitting or photovoltaic devices.

  16. Analysis of operations and cyber security policies for a system of cooperating Flexible Alternating Current Transmission System (FACTS) devices.

    SciTech Connect (OSTI)

    Phillips, Laurence R.; Tejani, Bankim; Margulies, Jonathan; Hills, Jason L.; Richardson, Bryan T.; Baca, Micheal J.; Weiland, Laura

    2005-12-01

    Flexible Alternating Current Transmission Systems (FACTS) devices are installed on electric power transmission lines to stabilize and regulate power flow. Power lines protected by FACTS devices can increase power flow and better respond to contingencies. The University of Missouri Rolla (UMR) is currently working on a multi-year project to examine the potential use of multiple FACTS devices distributed over a large power system region in a cooperative arrangement in which the FACTS devices work together to optimize and stabilize the regional power system. The report describes operational and security challenges that need to be addressed to employ FACTS devices in this way and recommends references, processes, technologies, and policies to address these challenges.

  17. Evaluation of Miscellaneous and Electronic Device Energy Use in Hospitals

    SciTech Connect (OSTI)

    Black, Douglas R.; Lanzisera, Steven M.; Lai, Judy; Brown, Richard E.; Singer, Brett C.

    2012-09-01

    Miscellaneous and electronic loads (MELs) consume about one-thirdof the primary energy used in US buildings, and their energy use is increasing faster than other end-uses. In healthcare facilities, 30percent of the annual electricity was used by MELs in 2008. This paper presents methods and challenges for estimating medical MELs energy consumption along with estimates of energy use in a hospital by combining device-level metered data with inventories and usage information. An important finding is that common, small devices consume large amounts of energy in aggregate and should not be ignored when trying to address hospital energy use.

  18. Metallization of bacterial cellulose for electrical and electronic device manufacture

    SciTech Connect (OSTI)

    Evans, Barbara R.; O'Neill, Hugh M.; Jansen, Valerie Malyvanh; Woodward, Jonathan

    2006-01-17

    The employment of metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The fuel cell includes an electrolyte membrane comprising a membrane support structure comprising bacterial cellulose, an anode disposed on one side of the electrolyte membrane, and a cathode disposed on an opposite side of the electrolyte membrane. At least one of the anode and the cathode comprises an electrode support structure comprising bacterial cellulose, and a catalyst disposed in or on the electrode support structure.

  19. Self Assembly for Nanostructured Electronic Devices at the Center for

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Functional Nanomaterials | MIT-Harvard Center for Excitonics Self Assembly for Nanostructured Electronic Devices at the Center for Functional Nanomaterials November 3, 2009 at 3pm/36-428 Charles Black Center for Functional Nanomaterials, Brookhaven National Laboratory Black_Chuck_D0331112 abstract: The Center for Functional Nanomaterials (CFN) at Brookhaven National Laboratory is a science-based user facility devoted to nanotechnology research addressing challenges in energy security. Five

  20. Calcium chloride electron injection/extraction layers in organic electronic devices

    SciTech Connect (OSTI)

    Qu, Bo, E-mail: bqu@pku.edu.cn, E-mail: qhgong@pku.edu.cn; Gao, Zhi; Yang, Hongsheng; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang, E-mail: bqu@pku.edu.cn, E-mail: qhgong@pku.edu.cn [State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)

    2014-01-27

    Nontoxic calcium chloride (CaCl{sub 2}) was introduced into organic electronic devices as cathode buffer layer (CBL). The turn-on voltage and maximum luminance of organic light-emitting diode (OLED) with 1.5?nm CaCl{sub 2} was 3.5?V and 21960?cd/m{sup 2}, respectively. OLED with 1.5?nm CaCl{sub 2} possessed comparable electroluminescent characteristics to that of the commonly used LiF. Moreover, the performance of the organic photovoltaic device with 0.5?nm CaCl{sub 2} was comparable to that of the control device with LiF. Therefore, CaCl{sub 2} has the potential to be used as the CBL for organic electronic devices.

  1. High-temperature superconducting thin-film-based electronic devices

    SciTech Connect (OSTI)

    Wu, X.D; Finokoglu, A.; Hawley, M.; Jia, Q.; Mitchell, T.; Mueller, F.; Reagor, D.; Tesmer, J.

    1996-09-01

    This the final report of a one-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project involved optimization of processing of Y123 and Tl-2212 thin films deposited on novel substrates for advanced electronic devices. The Y123 films are the basis for development of Josephson Junctions to be utilized in magnetic sensors. Microwave cavities based on the Tl-2212 films are the basis for subsequent applications as communication antennas and transmitters in satellites.

  2. High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

    SciTech Connect (OSTI)

    Shi, Hongying; Deng, Lingling; Chen, Shufen E-mail: wei-huang@njupt.edu.cn; Xu, Ying; Zhao, Xiaofei; Cheng, Fan; Huang, Wei E-mail: wei-huang@njupt.edu.cn; Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816

    2014-04-15

    Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

  3. Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices

    SciTech Connect (OSTI)

    Long, Mingsheng; Gong, Youpin; Wei, Xiangfei; Zhu, Chao; Xu, Jianbao; Liu, Ping; Guo, Yufen; Li, Weiwei; Liu, Liwei; Liu, Guangtong

    2014-04-14

    We fabricated a vertical structure device, in which graphene is sandwiched between two asymmetric ferromagnetic electrodes. The measurements of electron and spin transport were performed across the combined channels containing the vertical and horizontal components. The presence of electron-electron interaction (EEI) was found not only at low temperatures but also at moderate temperatures up to ∼120 K, and EEI dominates over weak localization (WL) with and without applying magnetic fields perpendicular to the sample plane. Moreover, spin valve effect was observed when magnetic filed is swept at the direction parallel to the sample surface. We attribute the EEI and WL surviving at a relatively high temperature to the effective suppress of phonon scattering in the vertical device structure. The findings open a way for studying quantum correlation at relatively high temperature.

  4. Methods for synchronizing a countdown routine of a timer key and electronic device

    SciTech Connect (OSTI)

    Condit, Reston A.; Daniels, Michael A.; Clemens, Gregory P.; Tomberlin, Eric S.; Johnson, Joel A.

    2015-06-02

    A timer key relating to monitoring a countdown time of a countdown routine of an electronic device is disclosed. The timer key comprises a processor configured to respond to a countdown time associated with operation of the electronic device, a display operably coupled with the processor, and a housing configured to house at least the processor. The housing has an associated structure configured to engage with the electronic device to share the countdown time between the electronic device and the timer key. The processor is configured to begin a countdown routine based at least in part on the countdown time, wherein the countdown routine is at least substantially synchronized with a countdown routine of the electronic device when the timer key is removed from the electronic device. A system and method for synchronizing countdown routines of a timer key and an electronic device are also disclosed.

  5. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Colvin, Vickie

    1996-01-01

    An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

  6. Flexible spin-orbit torque devices (Journal Article) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    to a spin accumulation at the PtCo interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. ...

  7. Metallization of bacterial cellulose for electrical and electronic device manufacture

    DOE Patents [OSTI]

    Evans, Barbara R.; O'Neill, Hugh M.; Jansen, Valerie Malyvanh; Woodward, Jonathan

    2011-06-07

    A method for the deposition of metals in bacterial cellulose and for the employment of the metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The method for impregnating bacterial cellulose with a metal comprises placing a bacterial cellulose matrix in a solution of a metal salt such that the metal salt is reduced to metallic form and the metal precipitates in or on the matrix. The method for the construction of a fuel cell comprises placing a hydrated bacterial cellulose support structure in a solution of a metal salt such that the metal precipitates in or on the support structure, inserting contact wires into two pieces of the metal impregnated support structure, placing the two pieces of metal impregnated support structure on opposite sides of a layer of hydrated bacterial cellulose, and dehydrating the three layer structure to create a fuel cell.

  8. Metallization of bacterial cellulose for electrical and electronic device manufacture

    DOE Patents [OSTI]

    Evans, Barbara R [Oak Ridge, TN; O'Neill, Hugh M [Knoxville, TN; Jansen, Valerie Malyvanh [Memphis, TN; Woodward, Jonathan [Knoxville, TN

    2010-09-28

    A method for the deposition of metals in bacterial cellulose and for the employment of the metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The method for impregnating bacterial cellulose with a metal comprises placing a bacterial cellulose matrix in a solution of a metal salt such that the metal salt is reduced to metallic form and the metal precipitates in or on the matrix. The method for the construction of a fuel cell comprises placing a hydrated bacterial cellulose support structure in a solution of a metal salt such that the metal precipitates in or on the support structure, inserting contact wires into two pieces of the metal impregnated support structure, placing the two pieces of metal impregnated support structure on opposite sides of a layer of hydrated bacterial cellulose, and dehydrating the three layer structure to create a fuel cell.

  9. A panoply of insertion devices at SOLEIL for a wide spectral range and flexible polarisation

    SciTech Connect (OSTI)

    Couprie, M. E.; Benabderrahmane, C.; Berteaud, P.; Briquez, F.; Chapuis, L.; Elajjouri, T.; Marteau, F.; Filhol, J. M.; Kitegi, C.; Marcouille, O.; Massal, M.; Valleau, M.; Veteran, J.; Chubar, O.

    2010-06-23

    The SOLEIL storage ring presents a very high fraction of its circumference dedicated to accommodate Insertion Devices (ID). Over the 25 presently planned insertion devices presenting a large variety of systems, 16 have been already installed and commissioned in September 2009. The UV-VUV region is covered with electromagnetic devices, offering tuneable polarisations. An electromagnet/permanent magnet undulator using copper sheets coils for fast switching of the helicity is under construction. 13 APPLE-II type undulators, with period ranging from 80 down to 36 mm, provide photons in the 0.1-10 keV region, some of them featuring tapering or quasi-periodicity. Five U20 in vacuum undulators cover typically the 3-30 keV range whereas an in vacuum wiggler, with compensation of the magnetic forces via adequate springs will cover the 10-50 keV spectral domain. R and D on cryogenic in-vacuum undulator is also under progress. A magnetic chicane using permanent magnet dipoles has also been designed in order to accommodate two canted undulators on the same straight section. A wiggler dedicated to slicing (production of femto second long pulses) is also being designed, its radiation will also serve for an X-ray beamline.

  10. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    SciTech Connect (OSTI)

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  11. Institute of Photo Electronic Thin Film Devices and Technology...

    Open Energy Info (EERE)

    Place: Tianjin Municipality, China Zip: 300071 Sector: Solar Product: A thin-film solar cell research institute in China. References: Institute of Photo-Electronic Thin...

  12. GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

    SciTech Connect (OSTI)

    Liu, Dong; Sun, Huarui; Pomeroy, James W.; Kuball, Martin; Francis, Daniel; Faili, Firooz; Twitchen, Daniel J.

    2015-12-21

    The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

  13. New device steps toward isolating single electrons for quantum computing |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Argonne National Laboratory This image shows the geometry of the microwave resonator and the DC bias pin (diagonal from top left) that UChicago physicists used to control the electric field they used to trap approximately 100,000 electrons. (Courtesy of Ge Yang) This image shows the geometry of the microwave resonator and the DC bias pin (diagonal from top left) that UChicago physicists used to control the electric field they used to trap approximately 100,000 electrons. (Courtesy of Ge

  14. Simultaneous specimen and stage cleaning device for analytical electron microscope

    DOE Patents [OSTI]

    Zaluzec, Nestor J.

    1996-01-01

    An improved method and apparatus are provided for cleaning both a specimen stage, a specimen and an interior of an analytical electron microscope (AEM). The apparatus for cleaning a specimen stage and specimen comprising a plasma chamber for containing a gas plasma and an air lock coupled to the plasma chamber for permitting passage of the specimen stage and specimen into the plasma chamber and maintaining an airtight chamber. The specimen stage and specimen are subjected to a reactive plasma gas that is either DC or RF excited. The apparatus can be mounted on the analytical electron microscope (AEM) for cleaning the interior of the microscope.

  15. Double deflection system for an electron beam device

    DOE Patents [OSTI]

    Parker, Norman W.; Golladay, Steven D.; Crewe, Albert V.

    1978-01-01

    A double deflection scanning system for electron beam instruments is provided embodying a means of correcting isotropic coma, and anisotropic coma aberrations induced by the magnetic lens of such an instrument. The scanning system deflects the beam prior to entry into the magnetic lens from the normal on-axis intersection of the beam with the lens according to predetermined formulas and thereby reduces the aberrations.

  16. Device for providing high-intensity ion or electron beam

    DOE Patents [OSTI]

    McClanahan, Edwin D.; Moss, Ronald W.

    1977-01-01

    A thin film of a low-thermionic-work-function material is maintained on the cathode of a device for producing a high-current, low-pressure gas discharge by means of sputter deposition from an auxiliary electrode. The auxiliary electrode includes a surface with a low-work-function material, such as thorium, uranium, plutonium or one of the rare earth elements, facing the cathode but at a disposition and electrical potential so as to extract ions from the gas discharge and sputter the low-work-function material onto the cathode. By continuously replenishing the cathode film, high thermionic emissions and ion plasmas can be realized and maintained over extended operating periods.

  17. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2009-11-24

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  18. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2011-07-19

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  19. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2014-03-04

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  20. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2013-05-14

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  1. Device and method for electron beam heating of a high density plasma

    DOE Patents [OSTI]

    Thode, L.E.

    A device and method for relativistic electron beam heating of a high density plasma in a small localized region are described. A relativistic electron beam generator produces a high voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10/sup 17/ to 10/sup 20/.

  2. An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

    SciTech Connect (OSTI)

    Litzenberger, Wayne; Lava, Val

    1994-08-01

    References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

  3. Steps toward fabricating cryogenic CMOS compatible single electron devices for future qubits.

    SciTech Connect (OSTI)

    Wendt, Joel Robert; Childs, Kenton David; Ten Eyck, Gregory A.; Tracy, Lisa A.; Eng, Kevin; Stevens, Jeffrey; Nordberg, Eric; Carroll, Malcolm S.; Lilly, Michael Patrick

    2008-08-01

    We describe the development of a novel silicon quantum bit (qubit) device architecture that involves using materials that are compatible with a Sandia National Laboratories (SNL) 0.35 mum complementary metal oxide semiconductor (CMOS) process intended to operate at 100 mK. We describe how the qubit structure can be integrated with CMOS electronics, which is believed to have advantages for critical functions like fast single electron electrometry for readout compared to current approaches using radio frequency techniques. Critical materials properties are reviewed and preliminary characterization of the SNL CMOS devices at 4.2 K is presented.

  4. Using Wireless Power Meters to Measure Energy Use of Miscellaneous and Electronic Devices in Buildings

    SciTech Connect (OSTI)

    UC Berkeley, Berkeley, CA USA; Brown, Richard; Lanzisera, Steven; Cheung, Hoi Ying; Lai, Judy; Jiang, Xiaofan; Dawson-Haggerty, Stephen; Taneja, Jay; Ortiz, Jorge; Culler, David

    2011-05-24

    Miscellaneous and electronic devices consume about one-third of the primary energy used in U.S. buildings, and their energy use is increasing faster than other end-uses. Despite the success of policies, such as Energy Star, that promote more efficient miscellaneous and electronic products, much remains to be done to address the energy use of these devices if we are to achieve our energy and carbon reduction goals. Developing efficiency strategies for these products depends on better data about their actual usage, but very few studies have collected field data on the long-term energy used by a large sample of devices due to the difficulty and expense of collecting device-level energy data. This paper describes the development of an improved method for collecting device-level energy and power data using small, relatively inexpensive wireless power meters. These meters form a mesh network based on Internet standard protocols and can form networks of hundreds of metering points in a single building. Because the meters are relatively inexpensive and do not require manual data downloading, they can be left in the field for months or years to collect long time-series energy use data. In addition to the metering technology, we also describe a field protocol used to collect comprehensive, robust data on the miscellaneous and electronic devices in a building. The paper presents sample results from several case study buildings, in which all the plug-in devices for several homes were metered, and a representative sample of several hundred plug-in devices in a commercial office building were metered for several months.

  5. Electronic interconnects and devices with topological surface states and methods for fabricating same

    DOE Patents [OSTI]

    Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

    2016-05-03

    An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

  6. Flexible pulse delay control up to picosecond for high-intensity twin electron bunches

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Zhen; Ding, Yuantao; Emma, Paul; Huang, Zhirong; Marinelli, Agostino; Tang, Chuanxiang

    2015-09-10

    Two closely spaced electron bunches have attracted strong interest due to their applications in two color X-ray free-electron lasers as well as witness bunch acceleration in plasmas and dielectric structures. In this paper, we propose a new scheme of delay system to vary the time delay up to several picoseconds while not affecting the bunch compression. Numerical simulations based on the Linac Coherent Light Source are performed to demonstrate the feasibility of this method.

  7. Device and method for electron beam heating of a high density plasma

    DOE Patents [OSTI]

    Thode, Lester E.

    1981-01-01

    A device and method for relativistic electron beam heating of a high density plasma in a small localized region. A relativistic electron beam generator produces a high voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10.sup.17 to 10.sup.20 electrons per cubic centimeter. The target plasma is ionized prior to application of the electron beam by means of a laser or other preionization source. Utilizing a relativistic electron beam with an individual particle energy exceeding 3 MeV, classical scattering by relativistic electrons passing through isolation foils is negligible. As a result, relativistic streaming instabilities are initiated within the high density target plasma causing the relativistic electron beam to efficiently deposit its energy into a small localized region within the high density plasma target.

  8. Mechanical flip-chip for ultra-high electron mobility devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bennaceur, Keyan; Schmidt, Benjamin A.; Gaucher, Samuel; Laroche, Dominique; Sandia National Lab.; Lilly, Michael P.; Reno, John L.; West, Ken W.; Pfeiffer, Loren N.; Gervais, Guillaume

    2015-09-22

    In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. Thismore » approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.« less

  9. Electronic & magnetic materials and devices at the CNM | Argonne National

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laboratory Electronic & magnetic materials and devices at the CNM Graphene Micrograph 1 of 24 Graphene Micrograph Ultra-high vacuum scanning tunneling microscopy image of a point defect in graphene that has been epitaxially grown on 6H-SiC(0001) (Nathan Guisinger, EMMD Group) at Argonne's Center for Nanoscale Materials. Image: Photo courtesy of Argonne National Laboratory Graphene Micrograph 1 of 24 Graphene Micrograph Ultra-high vacuum scanning tunneling microscopy image of a point

  10. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test themore » quality of the HfO2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO2 thin film functioned very well as the gate oxide.« less

  11. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    SciTech Connect (OSTI)

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test the quality of the HfO2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO2 thin film functioned very well as the gate oxide.

  12. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOE Patents [OSTI]

    Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2015-09-08

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  13. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOE Patents [OSTI]

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  14. A versatile LabVIEW and field-programmable gate array-based scanning probe microscope for in operando electronic device characterization

    SciTech Connect (OSTI)

    Berger, Andrew J. Page, Michael R.; Young, Justin R.; Bhallamudi, Vidya P.; Johnston-Halperin, Ezekiel; Pelekhov, Denis V.; Hammel, P. Chris; Jacob, Jan; Lewis, Jim; Wenzel, Lothar

    2014-12-15

    Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In operando characterization of such devices by scanning probe techniques is particularly well-suited for the microscopic study of these properties. We have developed a scanning probe microscope (SPM) which is capable of both standard force imaging (atomic, magnetic, electrostatic) and simultaneous electrical transport measurements. We utilize flexible and inexpensive FPGA (field-programmable gate array) hardware and a custom software framework developed in National Instrument's LabVIEW environment to perform the various aspects of microscope operation and device measurement. The FPGA-based approach enables sensitive, real-time cantilever frequency-shift detection. Using this system, we demonstrate electrostatic force microscopy of an electrically biased graphene field-effect transistor device. The combination of SPM and electrical transport also enables imaging of the transport response to a localized perturbation provided by the scanned cantilever tip. Facilitated by the broad presence of LabVIEW in the experimental sciences and the openness of our software solution, our system permits a wide variety of combined scanning and transport measurements by providing standardized interfaces and flexible access to all aspects of a measurement (input and output signals, and processed data). Our system also enables precise control of timing (synchronization of scanning and transport operations) and implementation of sophisticated feedback protocols, and thus should be broadly interesting and useful to practitioners in the field.

  15. Plasma response to electron energy filter in large volume plasma device

    SciTech Connect (OSTI)

    Sanyasi, A. K.; Awasthi, L. M.; Mattoo, S. K.; Srivastava, P. K.; Singh, S. K.; Singh, R.; Kaw, P. K. [Institute for Plasma Research, Gandhinagar, 382 428 Gujarat (India)] [Institute for Plasma Research, Gandhinagar, 382 428 Gujarat (India)

    2013-12-15

    An electron energy filter (EEF) is embedded in the Large Volume Plasma Device plasma for carrying out studies on excitation of plasma turbulence by a gradient in electron temperature (ETG) described in the paper of Mattoo et al. [S. K. Mattoo et al., Phys. Rev. Lett. 108, 255007 (2012)]. In this paper, we report results on the response of the plasma to the EEF. It is shown that inhomogeneity in the magnetic field of the EEF switches on several physical phenomena resulting in plasma regions with different characteristics, including a plasma region free from energetic electrons, suitable for the study of ETG turbulence. Specifically, we report that localized structures of plasma density, potential, electron temperature, and plasma turbulence are excited in the EEF plasma. It is shown that structures of electron temperature and potential are created due to energy dependence of the electron transport in the filter region. On the other hand, although structure of plasma density has origin in the particle transport but two distinct steps of the density structure emerge from dominance of collisionality in the source-EEF region and of the Bohm diffusion in the EEF-target region. It is argued and experimental evidence is provided for existence of drift like flute Rayleigh-Taylor in the EEF plasma.

  16. Performance of large electron energy filter in large volume plasma device

    SciTech Connect (OSTI)

    Singh, S. K.; Srivastava, P. K.; Awasthi, L. M.; Mattoo, S. K.; Sanyasi, A. K.; Kaw, P. K. [Institute for Plasma Research, Gandhinagar 382 428, Gujarat (India)] [Institute for Plasma Research, Gandhinagar 382 428, Gujarat (India); Singh, R. [Institute for Plasma Research, Gandhinagar 382 428, Gujarat (India) [Institute for Plasma Research, Gandhinagar 382 428, Gujarat (India); WCI Center for Fusion Theory, National Fusion Research Institute Gwahangno 113, Yu-seong-gu, Daejeon, 305-333 (Korea, Republic of)

    2014-03-15

    This paper describes an in-house designed large Electron Energy Filter (EEF) utilized in the Large Volume Plasma Device (LVPD) [S. K. Mattoo, V. P. Anita, L. M. Awasthi, and G. Ravi, Rev. Sci. Instrum. 72, 3864 (2001)] to secure objectives of (a) removing the presence of remnant primary ionizing energetic electrons and the non-thermal electrons, (b) introducing a radial gradient in plasma electron temperature without greatly affecting the radial profile of plasma density, and (c) providing a control on the scale length of gradient in electron temperature. A set of 19 independent coils of EEF make a variable aspect ratio, rectangular solenoid producing a magnetic field (B{sub x}) of 100?G along its axis and transverse to the ambient axial field (B{sub z} ? 6.2?G) of LVPD, when all its coils are used. Outside the EEF, magnetic field reduces rapidly to 1?G at a distance of 20 cm from the center of the solenoid on either side of target and source plasma. The EEF divides LVPD plasma into three distinct regions of source, EEF and target plasma. We report that the target plasma (n{sub e} ? 2 10{sup 11}?cm{sup ?3} and T{sub e} ? 2?eV) has no detectable energetic electrons and the radial gradients in its electron temperature can be established with scale length between 50?and?600 cm by controlling EEF magnetic field. Our observations reveal that the role of the EEF magnetic field is manifested by the energy dependence of transverse electron transport and enhanced transport caused by the plasma turbulence in the EEF plasma.

  17. Electron cyclotron heating at down-shifted frequencies in existing tokamak devices

    SciTech Connect (OSTI)

    Mazzucato, E.; Fidone, I.; Giruzzi, G.; Krivenski, V.

    1985-06-01

    Plasma heating in existing tokamak devices by electron cyclotron waves with frequency (f) significantly smaller than the electron gyrofrequency (f/sub c/) is investigated for the case of Maxwellian plasmas. It is shown that for central electron temperatures larger than 3 keV, strong absorption of extraordinary waves can occur at values of toroidal field for which the condition f = f/sub c/ is not satisfied in the plasma region. The cases of f = 60 GHz and f = 100 GHz are discussed for the PLT and TFTR devices as representative of medium (approx. =30 kG) and high (approx. =50 kG) magnetic field tokamaks, respectively. Numerical calculations with a ray tracing code indicate that most of the rf energy is absorbed in a central plasma region. These results are of practical interest because they significantly simplify the main technical problem of ECH in a tokamak reactor, i.e., the development of high frequency and high power microwave sources.

  18. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    DOE Patents [OSTI]

    Simpson, Lin Jay

    2015-07-28

    Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

  19. Local intelligent electronic device (IED) rendering templates over limited bandwidth communication link to manage remote IED

    DOE Patents [OSTI]

    Bradetich, Ryan; Dearien, Jason A; Grussling, Barry Jakob; Remaley, Gavin

    2013-11-05

    The present disclosure provides systems and methods for remote device management. According to various embodiments, a local intelligent electronic device (IED) may be in communication with a remote IED via a limited bandwidth communication link, such as a serial link. The limited bandwidth communication link may not support traditional remote management interfaces. According to one embodiment, a local IED may present an operator with a management interface for a remote IED by rendering locally stored templates. The local IED may render the locally stored templates using sparse data obtained from the remote IED. According to various embodiments, the management interface may be a web client interface and/or an HTML interface. The bandwidth required to present a remote management interface may be significantly reduced by rendering locally stored templates rather than requesting an entire management interface from the remote IED. According to various embodiments, an IED may comprise an encryption transceiver.

  20. Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

    DOE Patents [OSTI]

    Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

    1988-06-16

    An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

  1. Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

    DOE Patents [OSTI]

    Ashby, Carol I. H.; Myers, David R.; Vook, Frederick L.

    1989-01-01

    An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

  2. Electronic structure of molybdenum-oxide films and associated charge injection mechanisms in organic devices

    SciTech Connect (OSTI)

    Meyer, Jens; Kahn, Antoine

    2011-03-10

    We report on the electronic structure of freshly evaporated and air-exposed Molybdenum tri-oxide (MoO3) and the energy-level alignment between this compound and a hole-transport material [e.g., N,N'-diphenyl-N,N'-bis (1-naphthyl)-1,1'-biphenyl-4,4'-diamine (α-NPD)]. Ultraviolet and inverse photoelectron spectroscopy show that freshly evaporated MoO3 exhibits deep-lying electronic states with an electron affinity (EA) of 6.7 eV and ionization energy (IE) of 9.7 eV. Air exposure reduces EA and IE by ~1 eV, to 5.5 and 8.6 eV, respectively, but does not affect the hole-injection efficiency, which is confirmed by device studies. Thus, MoO3 can be applied in low-vacuum environment, which is particularly important for low-cost manufacturing processes. Our findings of the energy-level alignment between MoO3 and α-NPD also leads to a revised interpretation of the charge-injection mechanism, whereby the hole-injection corresponds to an electron extraction from the organic highest-occupied molecular orbital (HOMO) level via the MoO3 conduction band.

  3. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    DOE Patents [OSTI]

    Simpson, Lin Jay

    2013-12-17

    A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

  4. Printable, flexible and stretchable diamond for thermal management

    DOE Patents [OSTI]

    Rogers, John A; Kim, Tae Ho; Choi, Won Mook; Kim, Dae Hyeong; Meitl, Matthew; Menard, Etienne; Carlisle, John

    2013-06-25

    Various heat-sinked components and methods of making heat-sinked components are disclosed where diamond in thermal contact with one or more heat-generating components are capable of dissipating heat, thereby providing thermally-regulated components. Thermally conductive diamond is provided in patterns capable of providing efficient and maximum heat transfer away from components that may be susceptible to damage by elevated temperatures. The devices and methods are used to cool flexible electronics, integrated circuits and other complex electronics that tend to generate significant heat. Also provided are methods of making printable diamond patterns that can be used in a range of devices and device components.

  5. Cross-conjugated polymers for organic electronic devices and related methods

    DOE Patents [OSTI]

    2013-10-08

    Cross-conjugated donor-acceptor polymers, methods for their preparation, devices that include polymers, and methods for the preparation and use of the devices.

  6. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    SciTech Connect (OSTI)

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Rodt, Sven Reitzenstein, Stephan; Strittmatter, André

    2015-07-15

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  7. Semiconductor Nanotechnology: Novel Materials and Devices for Electronics, Photonics, and Renewable Energy Applications

    SciTech Connect (OSTI)

    Goodnick, Stephen; Korkin, Anatoli; Krstic, Predrag S; Mascher, Peter; Preston, John; Zaslavsky, Alex

    2010-03-01

    Electronic and photonic information technology and renewable energy alternatives, such as solar energy, fuel cells and batteries, have now reached an advanced stage in their development. Cost-effective improvements to current technological approaches have made great progress, but certain challenges remain. As feature sizes of the latest generations of electronic devices are approaching atomic dimensions, circuit speeds are now being limited by interconnect bottlenecks. This has prompted innovations such as the introduction of new materials into microelectronics manufacturing at an unprecedented rate and alternative technologies to silicon CMOS architectures. Despite the environmental impact of conventional fossil fuel consumption, the low cost of these energy sources has been a long-standing economic barrier to the development of alternative and more efficient renewable energy sources, fuel cells and batteries. In the face of mounting environmental concerns, interest in such alternative energy sources has grown. It is now widely accepted that nanotechnology offers potential solutions for securing future progress in information and energy technologies. The Canadian Semiconductor Technology Conference (CSTC) forum was established 25 years ago in Ottawa as an important symbol of the intrinsic strength of the Canadian semiconductor research and development community, and the Canadian semiconductor industry as a whole. In 2007, the 13th CSTC was held in Montreal, moving for the first time outside the national capital region. The first three meetings in the series of Nano and Giga Challenges in Electronics and Photonics NGCM2002 in Moscow, NGCM2004 in Krakow, and NGC2007 in Phoenix were focused on interdisciplinary research from the fundamentals of materials science to the development of new system architectures. In 2009 NGC2009 and the 14th Canadian Semiconductor Technology Conference (CSTC2009) were held as a joint event, hosted by McMaster University (10 14 August

  8. Method of making compound semiconductor films and making related electronic devices

    DOE Patents [OSTI]

    Basol, Bulent M.; Kapur, Vijay K.; Halani, Arvind T.; Leidholm, Craig R.; Roe, Robert A.

    1999-01-01

    A method of forming a compound film includes the steps of preparing a source material, depositing the source material on a base to form a precursor film, and heating the precursor film in a suitable atmosphere to form a film. The source material includes Group IB-IIIA alloy-containing particles having at least one Group IB-IIIA alloy phase, with Group IB-IIIA alloys constituting greater than about 50 molar percent of the Group IB elements and greater than about 50 molar percent of the Group IIIA elements in the source material. The film, then, includes a Group IB-IIIA-VIA compound. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.80 and less than about 1.0, or substantially greater than 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.80 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The alloy phase may include a dopant. Compound films including a Group IIB-IVA-VA compound or a Group IB-VA-VIA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.

  9. Initial Clinical Experience Performing Patient Treatment Verification With an Electronic Portal Imaging Device Transit Dosimeter

    SciTech Connect (OSTI)

    Berry, Sean L.; Polvorosa, Cynthia; Cheng, Simon; Deutsch, Israel; Chao, K. S. Clifford; Wuu, Cheng-Shie

    2014-01-01

    Purpose: To prospectively evaluate a 2-dimensional transit dosimetry algorithm's performance on a patient population and to analyze the issues that would arise in a widespread clinical adoption of transit electronic portal imaging device (EPID) dosimetry. Methods and Materials: Eleven patients were enrolled on the protocol; 9 completed and were analyzed. Pretreatment intensity modulated radiation therapy (IMRT) patient-specific quality assurance was performed using a stringent local 3%, 3-mm ? criterion to verify that the planned fluence had been appropriately transferred to and delivered by the linear accelerator. Transit dosimetric EPID images were then acquired during treatment and compared offline with predicted transit images using a global 5%, 3-mm ? criterion. Results: There were 288 transit images analyzed. The overall ? pass rate was 89.1% 9.8% (average 1 SD). For the subset of images for which the linear accelerator couch did not interfere with the measurement, the ? pass rate was 95.7% 2.4%. A case study is presented in which the transit dosimetry algorithm was able to identify that a lung patient's bilateral pleural effusion had resolved in the time between the planning CT scan and the treatment. Conclusions: The EPID transit dosimetry algorithm under consideration, previously described and verified in a phantom study, is feasible for use in treatment delivery verification for real patients. Two-dimensional EPID transit dosimetry can play an important role in indicating when a treatment delivery is inconsistent with the original plan.

  10. Electron-beam-induced information storage in hydrogenated amorphous silicon devices

    DOE Patents [OSTI]

    Yacobi, B.G.

    1985-03-18

    A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.

  11. Study of a prototype high quantum efficiency thick scintillation crystal video-electronic portal imaging device

    SciTech Connect (OSTI)

    Samant, Sanjiv S.; Gopal, Arun

    2006-08-15

    Image quality in portal imaging suffers significantly from the loss in contrast and spatial resolution that results from the excessive Compton scatter associated with megavoltage x rays. In addition, portal image quality is further reduced due to the poor quantum efficiency (QE) of current electronic portal imaging devices (EPIDs). Commercial video-camera-based EPIDs or VEPIDs that utilize a thin phosphor screen in conjunction with a metal buildup plate to convert the incident x rays to light suffer from reduced light production due to low QE (<2% for Eastman Kodak Lanex Fast-B). Flat-panel EPIDs that utilize the same luminescent screen along with an a-Si:H photodiode array provide improved image quality compared to VEPIDs, but they are expensive and can be susceptible to radiation damage to the peripheral electronics. In this article, we present a prototype VEPID system for high quality portal imaging at sub-monitor-unit (subMU) exposures based on a thick scintillation crystal (TSC) that acts as a high QE luminescent screen. The prototype TSC system utilizes a 12 mm thick transparent CsI(Tl) (thallium-activated cesium iodide) scintillator for QE=0.24, resulting in significantly higher light production compared to commercial phosphor screens. The 25x25 cm{sup 2} CsI(Tl) screen is coupled to a high spatial and contrast resolution Video-Optics plumbicon-tube camera system (1240x1024 pixels, 250 {mu}m pixel width at isocenter, 12-bit ADC). As a proof-of-principle prototype, the TSC system with user-controlled camera target integration was adapted for use in an existing clinical gantry (Siemens BEAMVIEW{sup PLUS}) with the capability for online intratreatment fluoroscopy. Measurements of modulation transfer function (MTF) were conducted to characterize the TSC spatial resolution. The measured MTF along with measurements of the TSC noise power spectrum (NPS) were used to determine the system detective quantum efficiency (DQE). A theoretical expression of DQE(0) was

  12. Electron-beam-induced information storage in hydrogenated amorphous silicon device

    DOE Patents [OSTI]

    Yacobi, Ben G.

    1986-01-01

    A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.

  13. Oxide-based method of making compound semiconductor films and making related electronic devices

    DOE Patents [OSTI]

    Kapur, Vijay K.; Basol, Bulent M.; Leidholm, Craig R.; Roe, Robert A.

    2000-01-01

    A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.6 and less than about 1.0, or substantially greater that 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.6 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The oxide-containing particles may include a dopant, as may the compound film. Compound films including a Group IIB-IVA-VA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.

  14. Integrated device architectures for electrochromic devices

    DOE Patents [OSTI]

    Frey, Jonathan Mack; Berland, Brian Spencer

    2015-04-21

    This disclosure describes systems and methods for creating monolithically integrated electrochromic devices which may be a flexible electrochromic device. Monolithic integration of thin film electrochromic devices may involve the electrical interconnection of multiple individual electrochromic devices through the creation of specific structures such as conductive pathway or insulating isolation trenches.

  15. Interconnected semiconductor devices

    DOE Patents [OSTI]

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  16. The dependence of potential well formation on the magnetic field strength and electron injection current in a polywell device

    SciTech Connect (OSTI)

    Cornish, S. Gummersall, D.; Carr, M.; Khachan, J.

    2014-09-15

    A capacitive probe has been used to measure the plasma potential in a polywell device in order to observe the dependence of potential well formation on magnetic field strength, electron injection current, and polywell voltage bias. The effectiveness of the capacitive probe in a high energy electron plasma was determined by measuring the plasma potential of a planar diode with an axial magnetic field. The capacitive probe was translated along the axis of one of the field coils of the polywell, and the spatial profile of the potential well was measured. The confinement time of electrons in the polywell was estimated with a simple analytical model which used the experimentally observed potential well depths, as well as a simulation of the electron trajectories using particle orbit theory.

  17. Correlation between the electron-phonon coupling and rectifying performance for poly(3-hexylthiophene)/n-type Si devices

    SciTech Connect (OSTI)

    Lin, Yow-Jon Chin, Yi-Min

    2014-11-07

    A correlation between the electron-phonon coupling and rectifying performance is identified for poly(3-hexylthiophene) (P3HT)/n-type Si devices and an analysis using the temperature-dependent Hall-effect characteristics is presented. The carrier mobility in the P3HT film exhibits strong temperature dependence, indicating the dominance of tunneling. However, the incorporation of titanium oxide (TiO{sub 2}) nanoparticles into P3HT leads to the dominance of hopping. The results demonstrate that the incorporation of TiO{sub 2} nanoparticles into P3HT influences the electrical property of P3HT/n-type Si devices by the electron-phonon coupling modification and the increased spacing between molecules that serve to enhance the carrier mobility in P3HT.

  18. Device and method for relativistic electron beam heating of a high-density plasma to drive fast liners

    DOE Patents [OSTI]

    Thode, Lester E.

    1981-01-01

    A device and method for relativistic electron beam heating of a high-density plasma in a small localized region. A relativistic electron beam generator or accelerator produces a high-voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low-density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high-density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10.sup.17 to 10.sup.20 electrons per cubic centimeter. The target gas is ionized prior to application of the electron beam by means of a laser or other preionization source to form a plasma. Utilizing a relativistic electron beam with an individual particle energy exceeding 3 MeV, classical scattering by relativistic electrons passing through isolation foils is negligible. As a result, relativistic streaming instabilities are initiated within the high-density target plasma causing the relativistic electron beam to efficiently deposit its energy and momentum into a small localized region of the high-density plasma target. Fast liners disposed in the high-density target plasma are explosively or ablatively driven to implosion by a heated annular plasma surrounding the fast liner which is generated by an annular relativistic electron beam. An azimuthal magnetic field produced by axial current flow in the annular plasma, causes the energy in the heated annular plasma to converge on the fast liner.

  19. Device and method for creating Gaussian aberration-corrected electron beams

    DOE Patents [OSTI]

    McMorran, Benjamin; Linck, Martin

    2016-01-19

    Electron beam phase gratings have phase profiles that produce a diffracted beam having a Gaussian or other selected intensity profile. Phase profiles can also be selected to correct or compensate electron lens aberrations. Typically, a low diffraction order produces a suitable phase profile, and other orders are discarded.

  20. Electron Flood Charge Compensation Device for Ion Trap Secondary Ion Mass Spectrometry

    SciTech Connect (OSTI)

    Appelhans, Anthony David; Ward, Michael Blair; Olson, John Eric

    2002-11-01

    During secondary ion mass spectrometry (SIMS) analyses of organophosphorous compounds adsorbed onto soils, the measured anion signals were lower than expected and it was hypothesized that the low signals could be due to sample charging. An electron flood gun was designed, constructed and used to investigate sample charging of these and other sample types. The flood gun was integrated into one end cap of an ion trap secondary ion mass spectrometer and the design maintained the geometry of the self-stabilizing extraction optics used in this instrument. The SIMION ion optics program was used to design the flood gun, and experimental results agreed with the predicted performance. Results showed the low anion signals from the soils were not due to sample charging. Other insulating and conducting samples were tested using both a ReO4- and a Cs+ primary ion beam. The proximity of the sample and electron source to the ion trap aperture resulted in generation of background ions in the ion trap via electron impact (EI) ionization during the period the electron gun was flooding the sample region. When using the electron gun with the ReO4- primary beam, the required electron current was low enough that the EI background was negligible; however, the high electron flood current required with the Cs+ beam produced background EI ions that degraded the quality of the mass spectra. The consequences of the EI produced cations will have to be evaluated on a sample-by-sample basis when using electron flood. It was shown that the electron flood gun could be intentionally operated to produce EI spectra in this instrument. This offers the opportunity to measure, nearly simultaneously, species evaporating from a sample, via EI, and species bound to the surface, via SIMS.

  1. Investigation of ion and electron heat transport of high-Te ECH heated discharges in the large helical device

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pablant, N. A.; Satake, S.; Yokoyama, M.; Gates, D. A.; Bitter, M.; Bertelli, N.; Delgado-Aparicio, L.; Dinklage, A.; Goto, M.; Hill, K. W.; et al

    2016-01-28

    An analysis of the radial electric field and heat transport, both for ions and electrons, is presented for a high-more » $${{T}_{\\text{e}}}$$ electron cyclotron heated (ECH) discharge on the large helical device (LHD). Transport analysis is done using the task3d transport suite utilizing experimentally measured profiles for both ions and electrons. Ion temperature and perpendicular flow profiles are measured using the recently installed x-ray imaging crystal spectrometer diagnostic (XICS), while electron temperature and density profiles are measured using Thomson scattering. The analysis also includes calculated ECH power deposition profiles as determined through the travis ray-tracing code. This is the first time on LHD that this type of integrated transport analysis with measured ion temperature profiles has been performed without NBI, allowing the heat transport properties of plasmas with only ECH heating to be more clearly examined. For this study, a plasma discharge is chosen which develops a high central electron temperature ($${{T}_{\\text{eo}}}=9$$ keV) at moderately low densities ($${{n}_{\\text{eo}}}=1.5\\times {{10}^{19}}$$ m-3). The experimentally determined transport properties from task3d are compared to neoclassical predictions as calculated by the gsrake and fortec-3d codes. The predicted electron fluxes are seen to be an order of magnitude less than the measured fluxes, indicating that electron transport is largely anomalous, while the neoclassical and measured ion heat fluxes are of the same magnitude. Neoclassical predictions of a strong positive ambipolar electric field ($${{E}_{\\text{r}}}$$ ) in the plasma core are validated through comparisons to perpendicular flow measurements from the XICS diagnostic. Furthermore, this provides confidence that the predictions are producing physically meaningful results for the particle fluxes and radial electric field, which are a key component in correctly predicting plasma confinement.« less

  2. Low thermal budget photonic processing of highly conductive Cu interconnects based on CuO nanoinks. Potential for flexible printed electronics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rager, Matthew S.; Aytug, Tolga; Veith, Gabriel M.; Joshi, Pooran C.

    2015-12-31

    The developing field of printed electronics nanoparticle based inks such as CuO show great promise as a low-cost alternative to other metal-based counterparts (e.g., silver). In particular, CuO inks significantly eliminate the issue of particle oxidation, before and during the sintering process, that is prevalent in Cu-based formulations. We report here the scalable and low-thermal budget photonic fabrication of Cu interconnects employing a roll-to-roll compatible pulse-thermal-processing (PTP) technique that enables phase reduction and subsequent sintering of inkjet-printed CuO patterns onto flexible polymer templates. Detailed investigations of curing and sintering conditions were performed to understand the impact of PTP system conditionsmore » on the electrical performance of the Cu patterns. Specifically, the impact of energy and power of photonic pulses on print conductivity was systematically studied by varying the following key processing parameters: pulse intensity, duration and sequence. Through optimization of such parameters, highly conductive prints in < 1 s with resistivity values as low as 100 n m has been achieved. We also observed that the introduction of an initial ink-drying step in ambient atmosphere, after the printing and before sintering, leads to significant improvements in mechanical integrity and electrical performance of the printed Cu patterns. Moreover, the viability of CuO reactive inks, coupled with the PTP technology and pre ink-drying protocols, has also been demonstrated for the additive integration of a low-cost Cu temperature sensor onto a flexible polymer substrate.« less

  3. Low thermal budget photonic processing of highly conductive Cu interconnects based on CuO nanoinks. Potential for flexible printed electronics

    SciTech Connect (OSTI)

    Rager, Matthew S.; Aytug, Tolga; Veith, Gabriel M.; Joshi, Pooran C.

    2015-12-31

    The developing field of printed electronics nanoparticle based inks such as CuO show great promise as a low-cost alternative to other metal-based counterparts (e.g., silver). In particular, CuO inks significantly eliminate the issue of particle oxidation, before and during the sintering process, that is prevalent in Cu-based formulations. We report here the scalable and low-thermal budget photonic fabrication of Cu interconnects employing a roll-to-roll compatible pulse-thermal-processing (PTP) technique that enables phase reduction and subsequent sintering of inkjet-printed CuO patterns onto flexible polymer templates. Detailed investigations of curing and sintering conditions were performed to understand the impact of PTP system conditions on the electrical performance of the Cu patterns. Specifically, the impact of energy and power of photonic pulses on print conductivity was systematically studied by varying the following key processing parameters: pulse intensity, duration and sequence. Through optimization of such parameters, highly conductive prints in < 1 s with resistivity values as low as 100 n m has been achieved. We also observed that the introduction of an initial ink-drying step in ambient atmosphere, after the printing and before sintering, leads to significant improvements in mechanical integrity and electrical performance of the printed Cu patterns. Moreover, the viability of CuO reactive inks, coupled with the PTP technology and pre ink-drying protocols, has also been demonstrated for the additive integration of a low-cost Cu temperature sensor onto a flexible polymer substrate.

  4. Practical method and device for enhancing pulse contrast ratio for lasers and electron accelerators

    DOE Patents [OSTI]

    Zhang, Shukui; Wilson, Guy

    2014-09-23

    An apparatus and method for enhancing pulse contrast ratios for drive lasers and electron accelerators. The invention comprises a mechanical dual-shutter system wherein the shutters are placed sequentially in series in a laser beam path. Each shutter of the dual shutter system has an individually operated trigger for opening and closing the shutter. As the triggers are operated individually, the delay between opening and closing first shutter and opening and closing the second shutter is variable providing for variable differential time windows and enhancement of pulse contrast ratio.

  5. Serpentine and corduroy circuits to enhance the stretchablity of a stretchable electronic device

    DOE Patents [OSTI]

    Maghribi, Mariam N.; Krulevitch, Peter A.; Wilson, Thomas S.; Hamilton, Julie K.; Park, Christina

    2011-01-18

    A stretchable electronic apparatus and method of producing the apparatus. The apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body, and at least one circuit line operatively connected to the stretchable polymer body, the at least one circuit line extending in the longitudinal direction and having a longitudinal component that extends in the longitudinal direction and having an offset component that is at an angle to the longitudinal direction, the longitudinal component and the offset component allowing the apparatus to stretch in the longitudinal direction while maintaining the integrity of the at least one circuit line.

  6. Serpentine and corduroy circuits to enhance the stretchability of a stretchable electronic device

    DOE Patents [OSTI]

    Maghribi, Mariam N.; Krulevitch, Peter A.; Wilson, Thomas S.; Hamilton, Julie K. , Park; Christina

    2007-09-04

    A stretchable electronic apparatus and method of producing the apparatus. The apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body, and at least one circuit line operatively connected to the stretchable polymer body, the at least one circuit line extending in the longitudinal direction and having a longitudinal component that extends in the longitudinal direction and having an offset component that is at an angle to the longitudinal direction, the longitudinal component and the offset component allowing the apparatus to stretch in the longitudinal direction while maintaining the integrity of the at least one circuit line.

  7. Investigation of Electron Transfer-Based Photonic and Electro-Optic Materials and Devices

    SciTech Connect (OSTI)

    Bromenshenk, Jerry J; Abbott, Edwin H; Dickensheets, David; Donovan, Richard P; Hobbs, J D; Spangler, Lee; McGuirl, Michele A; Spangler, Charles; Rebane, Aleksander; Rosenburg, Edward; Schmidt, V H; Singel, David J

    2008-03-28

    Montana's state program began its sixth year in 2006. The project's research cluster focused on physical, chemical, and biological materials that exhibit unique electron-transfer properties. Our investigators have filed several patents and have also have established five spin-off businesses (3 MSU, 2 UM) and a research center (MT Tech). In addition, this project involved faculty and students at three campuses (MSU, UM, MT Tech) and has a number of under-represented students, including 10 women and 5 Native Americans. In 2006, there was an added emphasis on exporting seminars and speakers via the Internet from UM to Chief Dull Knife Community College, as well as work with the MT Department of Commerce to better educate our faculty regarding establishing small businesses, licensing and patent issues, and SBIR program opportunities.

  8. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    SciTech Connect (OSTI)

    Bolat, Sami Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-15

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metalsemiconductormetal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.

  9. Feasibility study of microwave electron heating on the C-2 field-reversed configuration device

    SciTech Connect (OSTI)

    Yang, Xiaokang Ceccherini, Francesco; Dettrick, Sean; Binderbauer, Michl; Koehn, Alf; Petrov, Yuri

    2015-12-10

    Different microwave heating scenarios for the C-2 plasmas have been investigated recently with use of both the Genray ray-racing code and the IPF-FDMC full-wave code, and the study was focused on the excitation of the electron Bernstein wave (EBW) with O-mode launch. For a given antenna position on C-2 and the fixed 2D plasma density and equilibrium field profiles, simulations have been done for six selected frequencies (2.45 GHz, 5 GHz, 8 GHz, 18 GHz, 28 GHz, and 50 GHz). Launch angles have been optimized for each case in order to achieve high coupling efficiencies to the EBW by the O-X-B mode conversion process and high power deposition. Results show that among those six frequencies, the case of 8 GHz is the most promising scenario, which has both high mode conversion efficiency (90%) and the relatively deeper power deposition.

  10. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    DOE Patents [OSTI]

    Rogers, John A.; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G.; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

    2016-04-26

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  11. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    University of Illinois

    2009-04-21

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  12. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    DOE Patents [OSTI]

    Rogers, John A.; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G.; Lee, Keon Jae; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young; Kan, Seong Jun; Ahn, Jong Hyun; Kim, Hoon-sik

    2012-07-10

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  13. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne

    2012-06-12

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  14. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    DOE Patents [OSTI]

    Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

    2014-05-20

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  15. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    Rogers, John A.; Khang, Dahl -Young; Sun, Yugang; Menard, Etienne

    2015-08-11

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  16. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne

    2014-06-17

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  17. PLASMA DEVICE

    DOE Patents [OSTI]

    Gow, J.D.; Wilcox, J.M.

    1961-12-26

    A device is designed for producing and confining highenergy plasma from which neutrons are generated in copious quantities. A rotating sheath of electrons is established in a radial electric field and axial magnetic field produced within the device. The electron sheath serves as a strong ionizing medium to gas introdueed thereto and also functions as an extremely effective heating mechanism to the resulting plasma. In addition, improved confinement of the plasma is obtained by ring magnetic mirror fields produced at the ends of the device. Such ring mirror fields are defined by the magnetic field lines at the ends of the device diverging radially outward from the axis of the device and thereafter converging at spatial annular surfaces disposed concentrically thereabout. (AFC)

  18. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect (OSTI)

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  19. FLEXIBLE COUPLING

    DOE Patents [OSTI]

    Babelay, E.F.

    1962-02-13

    A flexible shaft coupling for operation at speeds in excess of 14,000 rpm is designed which requires no lubrication. A driving sleeve member and a driven sleeve member are placed in concentric spaced relationship. A torque force is transmitted to the driven member from the driving member through a plurality of nylon balls symmetrically disposed between the spaced sleeves. The balls extend into races and recesses within the respective sleeve members. The sleeve members have a suitable clearance therebetween and the balls have a suitable radial clearance during operation of the coupling to provide a relatively loose coupling. These clearances accommodate for both parallel and/or angular misalignments and avoid metal-tometal contact between the sleeve members during operation. Thus, no lubrication is needed, and a minimum of vibrations is transmitted between the sleeve members. (AEC)

  20. SU-E-T-335: Transit Dosimetry for Verification of Dose Delivery Using Electronic Portal Imaging Device (EPID)

    SciTech Connect (OSTI)

    Baek, T; Chung, E; Lee, S; Yoon, M

    2014-06-01

    Purpose: To evaluate the effectiveness of transit dose, measured with an electronic portal imaging device (EPID), in verifying actual dose delivery to patients. Methods: Plans of 5 patients with lung cancer, who received IMRT treatment, were examined using homogeneous solid water phantom and inhomogeneous anthropomorphic phantom. To simulate error in patient positioning, the anthropomorphic phantom was displaced from 5 mm to 10 mm in the inferior to superior (IS), superior to inferior (SI), left to right (LR), and right to left (RL) directions. The transit dose distribution was measured with EPID and was compared to the planed dose using gamma index. Results: Although the average passing rate based on gamma index (GI) with a 3% dose and a 3 mm distance-to-dose agreement tolerance limit was 94.34 % for the transit dose with homogeneous phantom, it was reduced to 84.63 % for the transit dose with inhomogeneous anthropomorphic phantom. The Result also shows that the setup error of 5mm (10mm) in IS, SI, LR and SI direction can Result in the decrease in values of GI passing rates by 1.3% (3.0%), 2.2% (4.3%), 5.9% (10.9%), and 8.9% (16.3%), respectively. Conclusion: Our feasibility study suggests that the transit dose-based quality assurance may provide information regarding accuracy of dose delivery as well as patient positioning.

  1. Development of a one-stop beam verification system using electronic portal imaging devices for routine quality assurance

    SciTech Connect (OSTI)

    Lim, Sangwook; Ma, Sun Young; Jeung, Tae Sig; Yi, Byong Yong; Lee, Sang Hoon; Lee, Suk; Cho, Sam Ju; Choi, Jinho

    2012-10-01

    In this study, a computer-based system for routine quality assurance (QA) of a linear accelerator (linac) was developed by using the dosimetric properties of an amorphous silicon electronic portal imaging device (EPID). An acrylic template phantom was designed such that it could be placed on the EPID and be aligned with the light field of the collimator. After irradiation, portal images obtained from the EPID were transferred in DICOM format to a computer and analyzed using a program we developed. The symmetry, flatness, field size, and congruence of the light and radiation fields of the photon beams from the linac were verified simultaneously. To validate the QA system, the ion chamber and film (X-Omat V2; Kodak, New York, NY) measurements were compared with the EPID measurements obtained in this study. The EPID measurements agreed with the film measurements. Parameters for beams with energies of 6 MV and 15 MV were obtained daily for 1 month using this system. It was found that our QA tool using EPID could substitute for the film test, which is a time-consuming method for routine QA assessment.

  2. ELECTRON DISCHARGE DEVICE

    DOE Patents [OSTI]

    Graham, M.H.

    1962-09-18

    A barrier-grid storage tube and an improved means for writing and reading of information in such a tube are described. A triax cable is provided in the reading and writing circuit and includes a coiled portion. The inner conductor of the cable is connected to the back plate of the barrier grid target assembly of the storage tube, the middle conductor of the cable is connected to a shielding member encompassing the target assembly and this member supports the barrier grid of the assembly, and the outer conductor of the cable is connected to an external shreld surrounding the target assembly. A source of writing sr- gnals is connected between the rnner conductor and middle conductor of said cable. Both the middle and outer conductors are connected to ground at the source end, and a small trimmer condenser is connected between the external shield and the source end of the inner conductor of the cable to compensate for the direct back plate-to-ground capacity due to the imperfect shielding of the barrier grid. The coiled portion of the cable provides for an output signal to a secondary corl coupled thereto. The grounded outer conductor serves as a means for preventing an output signal being applied to the coiled portion of the cable on application of writing signals to the inner and middle conductors of the cable. (AEC)

  3. SU-E-T-438: Commissioning of An In-Vivo Quality Assurance Method Using the Electronic Portal Imaging Device

    SciTech Connect (OSTI)

    Morin, O; Held, M; Pouliot, J

    2014-06-01

    Purpose: Patient specific pre-treatment quality assurance (QA) using arrays of detectors or film have been the standard approach to assure the correct treatment is delivered to the patient. This QA approach is expensive, labor intensive and does not guarantee or document that all remaining fractions were treated properly. The purpose of this abstract is to commission and evaluate the performance of a commercially available in-vivo QA software using the electronic portal imaging device (EPID) to record the daily treatments. Methods: The platform EPIgray V2.0.2 (Dosisoft), which machine model compares ratios of TMR with EPID signal to predict dose was commissioned for an Artiste (Siemens Oncology Care Systems) and a Truebeam (Varian medical systems) linear accelerator following the given instructions. The systems were then tested on three different phantoms (homogeneous stack of solid water, anthropomorphic head and pelvis) and on a library of patient cases. Simple and complex fields were delivered at different exposures and for different gantry angles. The effects of the table attenuation and the EPID sagging were evaluated. Gamma analysis of the measured dose was compared to the predicted dose for complex clinical IMRT cases. Results: Commissioning of the EPIgray system for two photon energies took 8 hours. The difference between the dose planned and the dose measured with EPIgray was better than 3% for all phantom scenarios tested. Preliminary results on patients demonstrate an accuracy of 5% is achievable in high dose regions for both 3DCRT and IMRT. Large discrepancies (>5%) were observed due to metallic structures or air cavities and in low dose areas. Flat panel sagging was visible and accounted for in the EPIgray model. Conclusion: The accuracy achieved by EPIgray is sufficient to document the safe delivery of complex IMRT treatments. Future work will evaluate EPIgray for VMAT and high dose rate deliveries. This work is supported by Dosisoft, Cachan, France.

  4. Flexible hydropower: boosting energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Flexible hydropower: boosting energy New hydroelectric resource for Northern New Mexico ... Abiquiu Dam's low-flow turbine for hydroelectric generation creates a flexible energy ...

  5. Liquid-phase exfoliation of chemical vapor deposition-grown single layer graphene and its application in solution-processed transparent electrodes for flexible organic light-emitting devices

    SciTech Connect (OSTI)

    Wu, Chaoxing; Li, Fushan E-mail: gtl-fzu@hotmail.com; Wu, Wei; Chen, Wei; Guo, Tailiang E-mail: gtl-fzu@hotmail.com

    2014-12-15

    Efficient and low-cost methods for obtaining high performance flexible transparent electrodes based on chemical vapor deposition (CVD)-grown graphene are highly desirable. In this work, the graphene grown on copper foil was exfoliated into micron-size sheets through controllable ultrasonication. We developed a clean technique by blending the exfoliated single layer graphene sheets with conducting polymer to form graphene-based composite solution, which can be spin-coated on flexible substrate, forming flexible transparent conducting film with high conductivity (?8 ?/?), high transmittance (?81% at 550?nm), and excellent mechanical robustness. In addition, CVD-grown-graphene-based polymer light emitting diodes with excellent bendable performances were demonstrated.

  6. Flexible control of femtosecond pulse duration and separation using an emittance-spoiling foil in x-ray free-electron lasers

    SciTech Connect (OSTI)

    Ding, Y.; Behrens, C.; Coffee, R.; Decker, F. -J.; Emma, P.; Field, C.; Helml, W.; Huang, Z.; Krejcik, P.; Krzywinski, J.; Loos, H.; Lutman, A.; Marinelli, A.; Maxwell, T. J.; Turner, J.

    2015-06-22

    We report experimental studies of generating and controlling femtosecond x-ray pulses in free-electron lasers (FELs) using an emittance spoiling foil. By selectivity spoiling the transverse emittance of the electron beam, the output pulse duration or double-pulse separation is adjusted with a variable size single or double slotted foil. Measurements were performed with an X-band transverse deflector located downstream of the FEL undulator, from which both the FEL lasing and emittance spoiling effects are observed directly.

  7. Development of an X-ray pixel detector with multi-port charge-coupled device for X-ray free-electron laser experiments

    SciTech Connect (OSTI)

    Kameshima, Takashi; Ono, Shun; Kudo, Togo; Ozaki, Kyosuke; Kirihara, Yoichi; Kobayashi, Kazuo; Inubushi, Yuichi; Yabashi, Makina; Hatsui, Takaki; Horigome, Toshio; Holland, Andrew; Holland, Karen; Burt, David; Murao, Hajime

    2014-03-15

    This paper presents development of an X-ray pixel detector with a multi-port charge-coupled device (MPCCD) for X-ray Free-Electron laser experiments. The fabrication process of the CCD was selected based on the X-ray radiation hardness against the estimated annual dose of 1.6 × 10{sup 14} photon/mm{sup 2}. The sensor device was optimized by maximizing the full well capacity as high as 5 Me- within 50 μm square pixels while keeping the single photon detection capability for X-ray photons higher than 6 keV and a readout speed of 60 frames/s. The system development also included a detector system for the MPCCD sensor. This paper summarizes the performance, calibration methods, and operation status.

  8. OLED devices

    DOE Patents [OSTI]

    Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

    2011-02-22

    An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

  9. Device and method for redirecting electromagnetic signals

    DOE Patents [OSTI]

    Garcia, Ernest J.

    1999-01-01

    A device fabricated to redirect electromagnetic signals, the device including a primary driver adapted to provide a predetermined force, a linkage system coupled to the primary driver, a pusher rod rotationally coupled to the linkage system, a flexible rod element attached to the pusher rod and adapted to buckle upon the application of the predetermined force, and a mirror structure attached to the flexible rod element at one end and to the substrate at another end. When the predetermined force buckles the flexible rod element, the mirror structure and the flexible rod element both move to thereby allow a remotely-located electromagnetic signal directed towards the device to be redirected.

  10. Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same

    DOE Patents [OSTI]

    Aytug, Tolga; Paranthaman, Mariappan Parans; Polat, Ozgur

    2012-07-17

    An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.

  11. Structural, dynamic, electronic, and vibrational properties of flexible, intermediate, and stressed rigid As-Se glasses and liquids from first principles molecular dynamics

    SciTech Connect (OSTI)

    Bauchy, M.; Kachmar, A.; Micoulaut, M.

    2014-11-21

    The structural, vibrational, electronic, and dynamic properties of amorphous and liquid As{sub x}Se{sub 1-x} (0.10

  12. Flexible moldable conductive current-limiting materials

    DOE Patents [OSTI]

    Shea, John Joseph; Djordjevic, Miomir B.; Hanna, William Kingston

    2002-01-01

    A current limiting PTC device (10) has two electrodes (14) with a thin film of electric conducting polymer material (20) disposed between the electrodes, the polymer material (20) having superior flexibility and short circuit performance, where the polymer material contains short chain aliphatic diepoxide, conductive filler particles, curing agent, and, preferably, a minor amount of bisphenol A epoxy resin.

  13. Investigation and optimization of low-frequency noise performance in readout electronics of dc superconducting quantum interference device

    SciTech Connect (OSTI)

    Zhao, Jing; Zhang, Yi; Krause, Hans-Joachim; Lee, Yong-Ho

    2014-05-15

    We investigated and optimized the low-frequency noise characteristics of a preamplifier used for readout of direct current superconducting quantum interference devices (SQUIDs). When the SQUID output was detected directly using a room-temperature low-voltage-noise preamplifier, the low-frequency noise of a SQUID system was found to be dominated by the input current noise of the preamplifiers in case of a large dynamic resistance of the SQUID. To reduce the current noise of the preamplifier in the low-frequency range, we investigated the dependence of total preamplifier noise on the collector current and source resistance. When the collector current was decreased from 8.4 mA to 3 mA in the preamplifier made of 3 parallel SSM2220 transistor pairs, the low-frequency total voltage noise of the preamplifier (at 0.1 Hz) decreased by about 3 times for a source resistance of 30 ? whereas the white noise level remained nearly unchanged. Since the relative contribution of preamplifier's input voltage and current noise is different depending on the dynamic resistance or flux-to-voltage transfer of the SQUID, the results showed that the total noise of a SQUID system at low-frequency range can be improved significantly by optimizing the preamplifier circuit parameters, mainly the collector current in case of low-noise bipolar transistor pairs.

  14. Method for encapsulating the edge of a flexible sheet

    DOE Patents [OSTI]

    Keenihan, James R; Clarey, Todd M

    2013-02-19

    The present invention is premised upon an inventive method of producing an over-molded edge portion on a flexible substrate, wherein the edge portion is void of open areas due to support devices in the mold cavity.

  15. Electron

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    density measurement by differential interferometry W. X. Ding, D. L. Brower, B. H. Deng, and T. Yates Electrical Engineering Department, University of California-Los Angeles, Los Angeles, California 90095 ͑Received 5 May 2006; presented on 10 May 2006; accepted 16 June 2006; published online 26 September 2006͒ A novel differential interferometer is being developed to measure the electron density gradient and its fluctuations. Two separate laser beams with slight spatial offset and frequency

  16. Reproducible strain measurement in electronic devices by applying integer multiple to scanning grating in scanning moir fringe imaging

    SciTech Connect (OSTI)

    Kim, Suhyun Jung, Younheum; Kim, Joong Jung; Lee, Sunyoung; Lee, Haebum; Kondo, Yukihito

    2014-10-15

    Scanning moir fringe (SMF) imaging by high-angle annular dark field scanning transmission electron microscopy was used to measure the strain field in the channel of a transistor with a CoSi{sub 2} source and drain. Nanometer-scale SMFs were formed with a scanning grating size of d{sub s} at integer multiples of the Si crystal lattice spacing d{sub l} (d{sub s} ? nd{sub l}, n = 2, 3, 4, 5). The moir fringe formula was modified to establish a method for quantifying strain measurement. We showed that strain fields in a transistor measured by SMF images were reproducible with an accuracy of 0.02%.

  17. Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

    DOE Patents [OSTI]

    Georgiades, N.P.; Polzik, E.S.; Kimble, H.J.

    1999-02-02

    An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies are disclosed. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100`s THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 {micro}m to 1.66 {micro}m for fiber optics can be accomplished with a nearly continuous frequency coverage. 7 figs.

  18. Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

    DOE Patents [OSTI]

    Georgiades, Nikos P.; Polzik, Eugene S.; Kimble, H. Jeff

    1999-02-02

    An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100's THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 .mu.m to 1.66 .mu.m for fiber optics can be accomplished with a nearly continuous frequency coverage.

  19. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    SciTech Connect (OSTI)

    Lijuan Zou

    2003-08-05

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

  20. Electron

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electron thermal transport within magnetic islands in the reversed-field pinch a... H. D. Stephens, 1,b͒ D. J. Den Hartog, 1,3 C. C. Hegna, 1,2 and J. A. Reusch 1 1 Department of Physics, University of Wisconsin-Madison, 1150 University Ave., Madison, Wisconsin 53706, USA 2 Department of Engineering Physics, University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706, USA 3 Center for Magnetic Self-Organization in Laboratory and Astrophysical Plasmas, University of

  1. The integration of liquid cryogen cooling and cryocoolers withsuperconducting electronic systems

    SciTech Connect (OSTI)

    Green, Michael A.

    2003-07-09

    The need for cryogenic cooling has been a critical issuethat has kept superconducting electronic devices from reaching the marketplace. Even though the performance of many of the superconductingcircuits is superior to silicon electronics, the requirement forcryogenic cooling has put the superconducting devices at a seriousdisadvantage. This report discusses the process of refrigeratingsuperconducting devices with cryogenic liquids and small cryocoolers.Three types of cryocoolers are compared for vibration, efficiency, andreliability. The connection of a cryocooler to the load is discussed. Acomparison of using flexible copper straps to carry the heat load andusing heat pipe is shown. The type of instrumentation needed formonitoring and controlling the cooling is discussed.

  2. Method for fabricating an interconnected array of semiconductor devices

    DOE Patents [OSTI]

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1989-10-10

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  3. WE-E-18A-08: Towards a Next-Generation Electronic Portal Device for Simultaneous Imaging and Dose Verification in Radiotherapy

    SciTech Connect (OSTI)

    Blake, S; Vial, P; Holloway, L; Kuncic, Z

    2014-06-15

    Purpose: This work forms part of an ongoing study to develop a next-generation electronic portal imaging device (EPID) for simultaneous imaging and dose verification in radiotherapy. Monte Carlo (MC) simulations were used to characterize the imaging performance of a novel EPID that has previously been demonstrated to exhibit a water-equivalent response. The EPID ' s response was quantified in several configurations and model parameters were empirically validated against experimental measurements. Methods: A MC model of a novel a-Si EPID incorporating an array of plastic scintillating fibers was developed. Square BCF-99-06A scintillator fibers with PMMA cladding (Saint-Gobain Crystals) were modelled in a matrix with total area measuring 150150 mm{sup 2}. The standard electromagnetic and optical physics Geant4 classes were used to simulate radiation transport from an angled slit source (6 MV energy spectrum) through the EPID and optical photons reaching the photodiodes were scored. The prototype's modulation transfer function (MTF) was simulated and validated against experimental measurements. Several optical transport parameters, fiber lengths and thicknesses of an air gap between the scintillator and photodiodes were investigated to quantify their effects on the prototype's detection efficiency, sensitivity and MTF. Results: Simulated EPID response was more sensitive to variations in geometry than in the optical parameters studied. The MTF was particularly sensitive to the introduction of a 0.51.0 mm air gap between the scintillator and photodiodes, which lowered the MTF relative to that simulated without the gap. As expected, increasing the fiber length increased the detector efficiency and sensitivity while decreasing the MTF. Conclusion: A model of a novel water-equivalent EPID has been developed and benchmarked against measurements using a physical prototype. We have demonstrated the feasibility of this new device and are continuing to optimize the design to

  4. Magnetoelectric polymer nanocomposite for flexible electronics

    SciTech Connect (OSTI)

    Alnassar, M. Alfadhel, A.; Ivanov, Yu. P.; Kosel, J.

    2015-05-07

    This paper reports the fabrication and characterization of a new type of magnetoelectric polymer nanocomposite that exhibits excellent ferromagnetism and ferroelectricity simultaneously at room temperature. The multiferroic nanocomposite consists of high aspect ratio ferromagnetic iron nanowires embedded inside a ferroelectric co-polymer poly(vinylindene fluoride-trifluoroethylene), P(VDF-TrFE). The nanocomposite has been fabricated via a simple low temperature spin coating technique. Structural, ferromagnetic, ferroelectric, and magnetoelectric properties of the developed nanocomposite have been characterized. The nanocomposite films showed isotropic magnetic properties due to the random orientation of the iron nanowires inside the film. In addition, the embedded nanowires did not hinder the ferroelectric phase development of the nanocomposite. The developed nanocomposite showed a high magnetoelectric coupling response of 156?mV/cmOe measured at 3.1 kOe DC bias field. This value is among the highest reported magnetoelectric coupling in two phase particulate polymer nanocomposites.

  5. Computation of the spectrum of spatial Lyapunov exponents for the spatially extended beam-plasma systems and electron-wave devices

    SciTech Connect (OSTI)

    Hramov, Alexander E.; Koronovskii, Alexey A.; Maximenko, Vladimir A.; Moskalenko, Olga I.

    2012-08-15

    The spectrum of Lyapunov exponents is powerful tool for the analysis of the complex system dynamics. In the general framework of nonlinear dynamics, a number of the numerical techniques have been developed to obtain the spectrum of Lyapunov exponents for the complex temporal behavior of the systems with a few degree of freedom. Unfortunately, these methods cannot be applied directly to analysis of complex spatio-temporal dynamics of plasma devices which are characterized by the infinite phase space, since they are the spatially extended active media. In the present paper, we propose the method for the calculation of the spectrum of the spatial Lyapunov exponents (SLEs) for the spatially extended beam-plasma systems. The calculation technique is applied to the analysis of chaotic spatio-temporal oscillations in three different beam-plasma model: (1) simple plasma Pierce diode, (2) coupled Pierce diodes, and (3) electron-wave system with backward electromagnetic wave. We find an excellent agreement between the system dynamics and the behavior of the spectrum of the spatial Lyapunov exponents. Along with the proposed method, the possible problems of SLEs calculation are also discussed. It is shown that for the wide class of the spatially extended systems, the set of quantities included in the system state for SLEs calculation can be reduced using the appropriate feature of the plasma systems.

  6. Encapsulation methods for organic electrical devices

    DOE Patents [OSTI]

    Blum, Yigal D.; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijian

    2013-06-18

    The disclosure provides methods and materials suitable for use as encapsulation barriers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device encapsulated by alternating layers of a silicon-containing bonding material and a ceramic material. The encapsulation methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  7. SU-E-T-145: Effects of Temporary Tachytherapy Inhibition Magnet On MOSFET Dose Measurements of Cardiovascular Implantable Electronic Devices (CIED) in Radiation Therapy Patients

    SciTech Connect (OSTI)

    P, Joshi; Salomons, G; Kerr, A; Peters, C; Lalonde, M

    2014-06-01

    Purpose: To determine the effects of temporary tachytherapy inhibition magnet on MOSFET dose measurements of cardiovascular implantable electronic devices (CIED) in radiation therapy patients. Methods: Infield and peripheral MOSFET dose measurements with 6MV photon beams were performed to evaluate dose to a CIED in the presence of a doughnut shaped temporary tachytherapy inhibition magnet. Infield measurements were done to quantify the effects of the magnetic field alone and shielding by the magnet. MOSFETs were placed inside a 2020cm{sup 2} field at a depth of 3cm in the isocentre plane in the presence and absence of the magnet. Peripheral dose measurements were done to determine the impact of the magnet on dose to the CIED in a clinical setting. These measurements were performed at the centre, under the rim and half way between a 1010cm{sup 2} field edge and the magnet with MOSFETS placed at the surface, 0.5cm and 1cm depths in the presence and absence of the magnet. Results: Infield measurements showed that effects of magnetic field on the MOSFET readings were within the 2% MOSFET dose measurement uncertainty; a 20% attenuation of dose under the magnet rim was observed. Peripheral dose measurements at the centre of the magnet show an 8% increase in surface dose and a 6% decrease in dose at 1cm depth. Dose under the magnet rim was reduced by approximately 68%, 45% and 25% for MOSFET placed at 0.0, 0.5 and 1.0cm bolus depths, respectively. Conclusions: The magnetic field has an insignificant effect on MOSFET dose measurements. Dose to the central region of CIED represented by centre of the magnet doughnut increases at the surface, and decreases at depths due to low energy scattering contributions from the magnet. Dose under the magnet rim, representing CIED edges, decreased significantly due to shielding.

  8. Apparatus and method for detecting tampering in flexible structures

    DOE Patents [OSTI]

    Maxey, Lonnie C. (Knoxville, TN); Haynes, Howard D. (Knoxville, TN)

    2011-02-01

    A system for monitoring or detecting tampering in a flexible structure includes taking electrical measurements on a sensing cable coupled to the structure, performing spectral analysis on the measured data, and comparing the spectral characteristics of the event to those of known benign and/or known suspicious events. A threshold or trigger value may used to identify an event of interest and initiate data collection. Alternatively, the system may be triggered at preset intervals, triggered manually, or triggered by a signal from another sensing device such as a motion detector. The system may be used to monitor electrical cables and conduits, hoses and flexible ducts, fences and other perimeter control devices, structural cables, flexible fabrics, and other flexible structures.

  9. Flexible optical panel

    DOE Patents [OSTI]

    Veligdan, James T.

    2001-01-01

    A flexible optical panel includes laminated optical waveguides, each including a ribbon core laminated between cladding, with the core being resilient in the plane of the core for elastically accommodating differential movement thereof to permit winding of the panel in a coil.

  10. Flexible pulse delay control up to picosecond for high-intensity...

    Office of Scientific and Technical Information (OSTI)

    Title: Flexible pulse delay control up to picosecond for high-intensity twin electron bunches Authors: Zhang, Zhen ; Ding, Yuantao ; Emma, Paul ; Huang, Zhirong ; Marinelli, ...

  11. Fast transit portal dosimetry using density-scaled layer modeling of aSi-based electronic portal imaging device and Monte Carlo method

    SciTech Connect (OSTI)

    Jung, Jae Won; Kim, Jong Oh; Yeo, Inhwan Jason; Cho, Young-Bin; Kim, Sun Mo; DiBiase, Steven

    2012-12-15

    Purpose: Fast and accurate transit portal dosimetry was investigated by developing a density-scaled layer model of electronic portal imaging device (EPID) and applying it to a clinical environment. Methods: The model was developed for fast Monte Carlo dose calculation. The model was validated through comparison with measurements of dose on EPID using first open beams of varying field sizes under a 20-cm-thick flat phantom. After this basic validation, the model was further tested by applying it to transit dosimetry and dose reconstruction that employed our predetermined dose-response-based algorithm developed earlier. The application employed clinical intensity-modulated beams irradiated on a Rando phantom. The clinical beams were obtained through planning on pelvic regions of the Rando phantom simulating prostate and large pelvis intensity modulated radiation therapy. To enhance agreement between calculations and measurements of dose near penumbral regions, convolution conversion of acquired EPID images was alternatively used. In addition, thickness-dependent image-to-dose calibration factors were generated through measurements of image and calculations of dose in EPID through flat phantoms of various thicknesses. The factors were used to convert acquired images in EPID into dose. Results: For open beam measurements, the model showed agreement with measurements in dose difference better than 2% across open fields. For tests with a Rando phantom, the transit dosimetry measurements were compared with forwardly calculated doses in EPID showing gamma pass rates between 90.8% and 98.8% given 4.5 mm distance-to-agreement (DTA) and 3% dose difference (DD) for all individual beams tried in this study. The reconstructed dose in the phantom was compared with forwardly calculated doses showing pass rates between 93.3% and 100% in isocentric perpendicular planes to the beam direction given 3 mm DTA and 3% DD for all beams. On isocentric axial planes, the pass rates varied

  12. Flexible cryogenic conduit

    DOE Patents [OSTI]

    Brindza, Paul Daniel; Wines, Robin Renee; Takacs, James Joseph

    1999-01-01

    A flexible and relatively low cost cryogenic conduit is described. The flexible cryogenic conduit of the present invention comprises a first inner corrugated tube with single braided serving, a second outer corrugated tube with single braided serving concentric with the inner corrugated tube, and arranged outwardly about the periphery of the inner corrugated tube and between the inner and outer corrugated tubes: a superinsulation layer; a one half lap layer of polyester ribbon; a one half lap layer of copper ribbon; a spirally wound refrigeration tube; a second one half lap layer of copper ribbon; a second one half lap layer of polyester ribbon; a second superinsulation layer; a third one half lap layer of polyester ribbon; and a spirally wound stretchable and compressible filament.

  13. Acoustic enhancement for photo detecting devices

    SciTech Connect (OSTI)

    Thundat, Thomas G; Senesac, Lawrence R; Van Neste, Charles W

    2013-02-19

    Provided are improvements to photo detecting devices and methods for enhancing the sensitivity of photo detecting devices. A photo detecting device generates an electronic signal in response to a received light pulse. An electro-mechanical acoustic resonator, electrically coupled to the photo detecting device, damps the electronic signal and increases the signal noise ratio (SNR) of the electronic signal. Increased photo detector standoff distances and sensitivities will result.

  14. Flexible hydropower: boosting energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (NNSA) Flexible Spending Accounts The great jobs we have at NNSA also come with comprehensive benefits packages. They are among the best and most comprehensive available and play a vital role in demonstrating the Federal government and NNSA's commitment to its employees. The great jobs we have at NNSA also come with comprehensive benefits packages. They are among the best and most comprehensive available and play a vital role in demonstrating the Federal government and NNSA's commitment to

  15. Industrial Fuel Flexibility Workshop

    SciTech Connect (OSTI)

    none,

    2006-09-01

    On September 28, 2006, in Washington, DC, ITP and Booz Allen Hamilton conducted a fuel flexibility workshop with attendance from various stakeholder groups. Workshop participants included representatives from the petrochemical, refining, food and beverage, steel and metals, pulp and paper, cement and glass manufacturing industries; as well as representatives from industrial boiler manufacturers, technology providers, energy and waste service providers, the federal government and national laboratories, and developers and financiers.

  16. Providing Grid Flexibility in

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Providing Grid Flexibility in Wyoming and Montana Introduction Powder River Energy Corporation (PRECorp) is an electric cooperative serving approximately 11,900 customers in a 16,200 square-mile area of rural Wyoming and Montana. PRECorp's customers frequently experience harsh weather conditions. Severe weather conditions in PRECorp's rural and remote service territory present unique challenges in providing reliable electric service to PRECorp's customers. PRECorp's customers include coal mining

  17. Simple and Flexible Scene Graph

    Energy Science and Technology Software Center (OSTI)

    2007-10-01

    The system implements a flexible and extensible scene graph for the visualization and analysis of scientific information.

  18. Electronic, mechanical and dielectric properties of silicane under tensile strain

    SciTech Connect (OSTI)

    Jamdagni, Pooja Sharma, Munish; Ahluwalia, P. K.; Kumar, Ashok; Thakur, Anil

    2015-05-15

    The electronic, mechanical and dielectric properties of fully hydrogenated silicene i.e. silicane in stable configuration are studied by means of density functional theory based calculations. The band gap of silicane monolayer can be flexibly reduced to zero when subjected to bi-axial tensile strain, leading to semi-conducting to metallic transition, whereas the static dielectric constant for in-plane polarization increases monotonically with increasing strain. Also the EEL function show the red shift in resonance peak with tensile strain. Our results offer useful insight for the application of silicane monolayer in nano-optical and electronics devices.

  19. Photovoltaic device

    DOE Patents [OSTI]

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-06-02

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  20. Photovoltaic device

    SciTech Connect (OSTI)

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-09-01

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

  1. Development of thermoelectric fibers for miniature thermoelectric devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ren, Fei; Menchhofer, Paul A.; Kiggans, Jr., James O.; Wang, Hsin

    2016-09-23

    Miniature thermoelectric (TE) devices may be used in a variety of applications such as power sources of small sensors, temperature regulation of precision electronics, etc. Reducing the size of TE elements may also enable design of novel devices with unique form factor and higher device efficiency. Current industrial practice of fabricating TE devices usually involves mechanical removal processes that not only lead to material loss but also limit the geometry of the TE elements. In this project, we explored a powder-processing method for the fabrication of TE fibers with large length-to-area ratio, which could be potentially used for miniature TEmore » devices. Powders were milled from Bi2Te3-based bulk materials and then mixed with a thermoplastic resin dissolved in an organic solvent. Through an extrusion process, flexible, continuous fibers with sub-millimeter diameters were formed. The polymer phase was then removed by sintering. Sintered fibers exhibited similar Seebeck coefficients to the bulk materials. Moreover, their electrical resistivity was much higher, which might be related to the residual porosity and grain boundary contamination. Prototype miniature uni-couples fabricated from these fibers showed a linear I-V behavior and could generate millivolt voltages and output power in the nano-watt range. Further development of these TE fibers requires improvement in their electrical conductivities, which needs a better understanding of the causes that lead to the low conductivity in the sintered fibers.« less

  2. Micro environmental sensing device

    DOE Patents [OSTI]

    Polosky, Marc A.; Lukens, Laurance L.

    2006-05-02

    A microelectromechanical (MEM) acceleration switch is disclosed which includes a proof mass flexibly connected to a substrate, with the proof mass being moveable in a direction substantially perpendicular to the substrate in response to a sensed acceleration. An electrode on the proof mass contacts one or more electrodes located below the proof mass to provide a switch closure in response to the sensed acceleration. Electrical latching of the switch in the closed position is possible with an optional latching electrode. The MEM acceleration switch, which has applications for use as an environmental sensing device, can be fabricated using micromachining.

  3. Three-dimensional skeleton networks of graphene wrapped polyaniline nanofibers: An excellent structure for high-performance flexible solid-state supercapacitors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hu, Nantao; Zhang, Liling; Yang, Chao; Zhao, Jian; Yang, Zhi; Wei, Hao; Liao, Hanbin; Feng, Zhenxing; Fisher, Adrian; Zhang, Yafei; et al

    2016-01-22

    Thin, robust, lightweight, and flexible supercapacitors (SCs) have aroused growing attentions nowadays due to the rapid development of flexible electronics. Graphene-polyaniline (PANI) hybrids are attractive candidates for high performance SCs. In order to utilize them in real devices, it is necessary to improve the capacitance and the structure stability of PANI. Here we report a hierarchical three-dimensional structure, in which all of PANI nanofibers (NFs) are tightly wrapped inside reduced graphene oxide (rGO) nanosheet skeletons, for high-performance flexible SCs. The as-fabricated film electrodes with this unique structure showed a highest gravimetric specific capacitance of 921 F/g and volumetric capacitance ofmore » 391 F/cm3. The assembled solid-state SCs gave a high specific capacitance of 211 F/g (1 A/g), a high area capacitance of 0.9 F/cm2, and a competitive volumetric capacitance of 25.6 F/cm3. The SCs also exhibited outstanding rate capability (~75% retention at 20 A/g) as well as excellent cycling stability (100% retention at 10 A/g for 2000 cycles). Additionally, no structural failure and loss of performance were observed under the bending state. Lastly, this structure design paves a new avenue for engineering rGO/PANI or other similar hybrids for high performance flexible energy storage devices.« less

  4. Support and maneuvering device

    DOE Patents [OSTI]

    Wood, R.L.

    1987-03-23

    A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof. 9 figs.

  5. Support and maneuvering device

    DOE Patents [OSTI]

    Wood, Richard L.

    1988-01-01

    A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof.

  6. Cable shield connecting device

    DOE Patents [OSTI]

    Silva, Frank A.

    1979-01-01

    A cable shield connecting device for installation on a high voltage cable of the type having a metallic shield, the device including a relatively conformable, looped metal bar for placement around a bared portion of the metallic shield to extend circumferentially around a major portion of the circumference of the metallic shield while being spaced radially therefrom, a plurality of relatively flexible metallic fingers affixed to the bar, projecting from the bar in an axial direction and spaced circumferentially along the bar, each finger being attached to the metallic shield at a portion located remote from the bar to make electrical contact with the metallic shield, and a connecting conductor integral with the bar.

  7. Flexible composite radiation detector

    DOE Patents [OSTI]

    Cooke, D. Wayne; Bennett, Bryan L.; Muenchausen, Ross E.; Wrobleski, Debra A.; Orler, Edward B.

    2006-12-05

    A flexible composite scintillator was prepared by mixing fast, bright, dense rare-earth doped powdered oxyorthosilicate (such as LSO:Ce, LSO:Sm, and GSO:Ce) scintillator with a polymer binder. The binder is transparent to the scintillator emission. The composite is seamless and can be made large and in a wide variety of shapes. Importantly, the composite can be tailored to emit light in a spectral region that matches the optimum response of photomultipliers (about 400 nanometers) or photodiodes (about 600 nanometers), which maximizes the overall detector efficiency.

  8. Flexible Assembly Solar Technology

    Broader source: Energy.gov [DOE]

    The Flexible Assembly Solar Technology Fact Sheet explains a 2012 SunShot CSP R&D award project led by a team from BrightSource Industries. They will design and deploy a prototype of FAST, which is an automated collector-assembly platform that can be used for rapid assembly and installation of heliostats at a solar power tower plant. FAST has the potential to decrease costs related to permitting, construction, maintenance, operation, storage, and demolition of the heliostat assembly building, aiming to achieve SunShot Initiative’s target installed solar field cost of $75/m2.

  9. Rotating flexible drag mill

    DOE Patents [OSTI]

    Pepper, W.B.

    1984-05-09

    A rotating parachute for decelerating objects travelling through atmosphere at subsonic or supersonic deployment speeds includes a circular canopy having a plurality of circumferentially arranged flexible panels projecting radially from a solid central disk. A slot extends radially between adjacent panels to the outer periphery of the canopy. Upon deployment, the solid disk diverts air radially to rapidly inflate the panels into a position of maximum diameter. Air impinging on the panels adjacent the panel slots rotates the parachute during its descent. Centrifugal force flattens the canopy into a constant maximum diameter during terminal descent for maximum drag and deceleration.

  10. Passive hybrid sensing tag with flexible substrate saw device

    DOE Patents [OSTI]

    Skinner, Jack L.; Chu, Eric Y.; Ho, Harvey

    2012-12-25

    The integration of surface acoustic wave (SAW) filters, microfabricated transmission lines, and sensors onto polymer substrates in order to enable a passive wireless sensor platform is described herein. Incident microwave pulses on an integrated antenna are converted to an acoustic wave via a SAW filter and transmitted to an impedance based sensor, which for this work is a photodiode. Changes in the sensor state induce a corresponding change in the impedance of the sensor resulting in a reflectance profile. Data collected at a calibrated receiver is used to infer the state of the sensor. Based on this principal, light levels were passively and wirelessly demonstrated to be sensed at distances of up to about 12 feet.

  11. Flexible ocean upwelling pipe

    DOE Patents [OSTI]

    Person, Abraham

    1980-01-01

    In an ocean thermal energy conversion facility, a cold water riser pipe is releasably supported at its upper end by the hull of the floating facility. The pipe is substantially vertical and has its lower end far below the hull above the ocean floor. The pipe is defined essentially entirely of a material which has a modulus of elasticity substantially less than that of steel, e.g., high density polyethylene, so that the pipe is flexible and compliant to rather than resistant to applied bending moments. The position of the lower end of the pipe relative to the hull is stabilized by a weight suspended below the lower end of the pipe on a flexible line. The pipe, apart from the weight, is positively buoyant. If support of the upper end of the pipe is released, the pipe sinks to the ocean floor, but is not damaged as the length of the line between the pipe and the weight is sufficient to allow the buoyant pipe to come to a stop within the line length after the weight contacts the ocean floor, and thereafter to float submerged above the ocean floor while moored to the ocean floor by the weight. The upper end of the pipe, while supported by the hull, communicates to a sump in the hull in which the water level is maintained below the ambient water level. The sump volume is sufficient to keep the pipe full during heaving of the hull, thereby preventing collapse of the pipe.

  12. Gas microstrip detectors based on flexible printed circuit technology

    SciTech Connect (OSTI)

    Salomon, M.; Crowe, K.; Faszer, W.; Lindsay, P.; Maier, J.M.C.

    1996-06-01

    The authors have studied the properties of a new type of Gas Microstrip Counter built using flexible printed circuit technology. They describe the manufacturing procedures, the assembly of the device, as well as its operation under a variety of conditions, gases and types of radiation. They also describe two new passivation materials, tantalum and niobium, which produce effective surfaces.

  13. Organic spintronic devices and methods for making the same (Patent...

    Office of Scientific and Technical Information (OSTI)

    Title: Organic spintronic devices and methods for making the same An organic spintronic photovoltaic device (100) having an organic electron active layer (102) functionally ...

  14. Sealing device

    DOE Patents [OSTI]

    Garcia-Crespo, Andres Jose

    2013-12-10

    A sealing device for sealing a gap between a dovetail of a bucket assembly and a rotor wheel is disclosed. The sealing device includes a cover plate configured to cover the gap and a retention member protruding from the cover plate and configured to engage the dovetail. The sealing device provides a seal against the gap when the bucket assemply is subjected to a centrifugal force.

  15. Thermoplastic tape compaction device

    DOE Patents [OSTI]

    Campbell, V.W.

    1994-12-27

    A device is disclosed for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite. 5 figures.

  16. Thermoplastic tape compaction device

    DOE Patents [OSTI]

    Campbell, Vincent W.

    1994-01-01

    A device for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite.

  17. Power Device Packaging | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    D.C. ape023wang2010p.pdf (2.42 MB) More Documents & Publications Power Device Packaging Power Device Packaging Direct Water-Cooled Power Electronics Substrate Packaging

  18. Interconnect assembly for an electronic assembly and assembly method therefor

    DOE Patents [OSTI]

    Gerbsch, Erich William

    2003-06-10

    An interconnect assembly and method for a semiconductor device, in which the interconnect assembly can be used in lieu of wirebond connections to form an electronic assembly. The interconnect assembly includes first and second interconnect members. The first interconnect member has a first surface with a first contact and a second surface with a second contact electrically connected to the first contact, while the second interconnect member has a flexible finger contacting the second contact of the first interconnect member. The first interconnect member is adapted to be aligned and registered with a semiconductor device having a contact on a first surface thereof, so that the first contact of the first interconnect member electrically contacts the contact of the semiconductor device. Consequently, the assembly method does not require any wirebonds, but instead merely entails aligning and registering the first interconnect member with the semiconductor device so that the contacts of the first interconnect member and the semiconductor device make electrically contact, and then contacting the second contact of the first interconnect member with the flexible finger of the second interconnect member.

  19. Flexible cloth seal assembly

    DOE Patents [OSTI]

    Bagepalli, B.S.; Taura, J.C.; Aksit, M.F.; Demiroglu, M.; Predmore, D.R.

    1999-06-29

    A seal assembly is described having a flexible cloth seal which includes a shim assemblage surrounded by a cloth assemblage. A first tubular end portion, such as a gas turbine combustor, includes a longitudinal axis and has smooth and spaced-apart first and second surface portions defining a notch there between which is wider at its top than at its bottom and which extends outward from the axis. The second surface portion is outside curved, and a first edge of the cloth seal is positioned in the bottom of the notch. A second tubular end portion, such as a first stage nozzle, is located near, spaced apart from, and coaxially aligned with, the first tubular end portion. The second tubular end portion has a smooth third surface portion which surrounds at least a portion of the first tubular end portion and which is contacted by the cloth seal. 7 figs.

  20. Flexible retinal electrode array

    DOE Patents [OSTI]

    Okandan, Murat; Wessendorf, Kurt O.; Christenson, Todd R.

    2006-10-24

    An electrode array which has applications for neural stimulation and sensing. The electrode array can include a large number of electrodes each of which is flexibly attached to a common substrate using a plurality of springs to allow the electrodes to move independently. The electrode array can be formed from a combination of bulk and surface micromachining, with electrode tips that can include an electroplated metal (e.g. platinum, iridium, gold or titanium) or a metal oxide (e.g. iridium oxide) for biocompatibility. The electrode array can be used to form a part of a neural prosthesis, and is particularly well adapted for use in an implantable retinal prosthesis where the electrodes can be tailored to provide a uniform gentle contact pressure with optional sensing of this contact pressure at one or more of the electrodes.

  1. Flexible cloth seal assembly

    DOE Patents [OSTI]

    Bagepalli, Bharat Sampathkumar; Taura, Joseph Charles; Aksit, Mahmut Faruk; Demiroglu, Mehmet; Predmore, Daniel Ross

    1999-01-01

    A seal assembly having a flexible cloth seal which includes a shim assemblage surrounded by a cloth assemblage. A first tubular end portion, such as a gas turbine combustor, includes a longitudinal axis and has smooth and spaced-apart first and second surface portions defining a notch therebetween which is wider at its top than at its bottom and which extends outward from the axis. The second surface portion is outside curved, and a first edge of the cloth seal is positioned in the bottom of the notch. A second tubular end portion, such as a first stage nozzle, is located near, spaced apart from, and coaxially aligned with, the first tubular end portion. The second tubular end portion has a smooth third surface portion which surrounds at least a portion of the first tubular end portion and which is contacted by the cloth seal.

  2. Damped flexible seal

    DOE Patents [OSTI]

    DuBois, Neil J.; Amaral, Antonio M.

    1992-10-27

    A damped flexible seal assembly for a torpedo isolates the tailcone thereof rom vibrational energy present in the drive shaft assembly. A pair of outside flanges, each of which include an inwardly facing groove and an O-ring constrained therein, provide a watertight seal against the outer non-rotating surface of the drive shaft assembly. An inside flange includes an outwardly-facing groove and an O-ring constrained therein, and provides a watertight seal against the inner surface of the tail cone. Two cast-in-place elastomeric seals provide a watertight seal between the flanges and further provide a damping barrier between the outside flanges and the inside flanges for damping vibrational energy present in the drive shaft assembly before the energy can reach the tailcone through the seal assembly.

  3. Flexible swivel connection

    DOE Patents [OSTI]

    Hoh, J.C.

    1985-02-19

    A flexible swivel boot connector for connecting a first boot shield section to a second boot shield section, both first and second boot sections having openings therethrough, the second boot section having at least two adjacent accordian folds at the end having the opening, the second boot section being positioned through the opening of the first boot section such that a first of the accordian folds is within the first boot section and a second of the accordian folds is outside of the first boot, includes first and second annular discs, the first disc being positioned within and across the first accordian fold, the second disc being positioned within and across the second accordian fold, such that the first boot section is moveably and rigidly connected between the first and second accordian folds of the second boot section.

  4. BRAKE DEVICE

    DOE Patents [OSTI]

    O'Donnell, T.J.

    1959-03-10

    A brake device is described for utilization in connection with a control rod. The device comprises a pair of parallelogram link mechanisms, a control rod moveable rectilinearly therebetween in opposite directions, and shoes resiliently supported by the mechanism for frictional engagement with the control rod.

  5. Electrochromic devices

    DOE Patents [OSTI]

    Allemand, Pierre M.; Grimes, Randall F.; Ingle, Andrew R.; Cronin, John P.; Kennedy, Steve R.; Agrawal, Anoop; Boulton, Jonathan M.

    2001-01-01

    An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

  6. Industrial Feedstock Flexibility Workshop Results

    SciTech Connect (OSTI)

    Ozokwelu, Dickson; Margolis, Nancy; Justiniano, Mauricio; Monfort, Joe; Brueske, Sabine; Sabouni, Ridah

    2009-08-01

    This report (PDF 649 KB) summarizes the results of the 2009 Industrial Feedstock Flexibility Workshop, which took place in Atlanta, GA on August 19-20, 2009.

  7. Diversity & Flexibility Key to Sustainability

    Broader source: Energy.gov [DOE]

    Plenary V: Biofuels and Sustainability: Acknowledging Challenges and Confronting MisconceptionsDiversity & Flexibility Key to SustainabilityDavid Babson, Senior Fuels Engineer, Union of...

  8. Intelligent devices simplify remote SCADA installations in substations

    SciTech Connect (OSTI)

    Kopriva, V.J.

    1994-12-31

    Utilities are increasingly relying on Supervisory Control and Data Acquisition (SCADA) Systems for the effective and economical management of electric transmission and distribution systems. Now, advances in equipment and design technologies have created opportunities for an increased level of monitoring and control at electric power substations. In the past, prohibitive factors, including complicated equipment and wiring retrofits, protocol compatibility, and hardware installation and maintenance costs have impeded electric utilities in their attempt at broad based application of SCADA systems in electric substations, particularly at distribution voltage levels. These advances in equipment technologies have provided utilities with the opportunity to install and operate SCADA systems at lower cost, while providing flexibility for system expansion over longer periods. The development of intelligent microprocessor controlled devices and integrated communications has facilitated the use of a distributed design approach to installing SCADA monitoring and control in substations. This approach offers greater hardware flexibility and reduced installation costs while increasing reliability, making the addition of monitoring and control to electric substations increasingly practical. This paper will examine current trends in the application of intelligent microprocessor controlled and electronic devices, in stand alone and distributed applications, and the simplification of techniques for installing SCADA systems in substations. It will also consider the potential advantages to be realized in cost and reliability, and examine the necessary changes in design and operation philosophies required to effectively implement the new technology.

  9. Neutron-absorber release device

    DOE Patents [OSTI]

    VAN Erp, Jan B.; Kimont, Edward L.

    1976-01-01

    A resettable device is provided for supporting an object, sensing when an environment reaches a critical temperature and releasing the object when the critical temperature is reached. It includes a flexible container having a material inside with a melting point at the critical temperature. The object's weight is supported by the solid material which gives rigidity to the container until the critical temperature is reached at which point the material in the container melts. The flexible container with the now fluid material inside has insufficient strength to support the object which is thereby released. Biasing means forces the container back to its original shape so that when the temperature falls below the melting temperature the material again solidifies, and the object may again be supported by the device.

  10. Flexible semi-transparent organic spin valve based on bathocuproine

    SciTech Connect (OSTI)

    Sun, Xiangnan; Bedoya-Pinto, Amilcar; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-08-25

    Organic semiconductors are attractive materials for advanced spintronic applications due to their long spin lifetimes and, simultaneously, their mechanical flexibility. With the aim of combining these advantages in a single device, we report on the fabrication and properties of a mechanically flexible bathocuproine-based spin valve. This organic spin device shows great stability on both electrical and magneto-transport properties upon mechanical bending at different radius (up to r = 5 mm), while featuring long-lasting endurance (on bending over 50 times). The room-temperature magnetoresistance ratio reaches up to 3.5%, and is notably preserved under air atmosphere. The observation of spin transport at room-temperature, combined with the outstanding mechanical properties and air stability, highlights the potential of bathocuproine-based spin devices towards applications.

  11. Bumper wall for plasma device

    DOE Patents [OSTI]

    Coultas, Thomas A.

    1977-01-01

    Operation of a plasma device such as a reactor for controlled thermonuclear fusion is facilitated by an improved bumper wall enclosing the plasma to smooth the flow of energy from the plasma as the energy impinges upon the bumper wall. The bumper wall is flexible to withstand unequal and severe thermal shocks and it is readily replaced at less expense than the cost of replacing structural material in the first wall and blanket that surround it.

  12. Flexible programmable logic module

    DOE Patents [OSTI]

    Robertson, Perry J.; Hutchinson, Robert L.; Pierson, Lyndon G.

    2001-01-01

    The circuit module of this invention is a VME board containing a plurality of programmable logic devices (PLDs), a controlled impedance clock tree, and interconnecting buses. The PLDs are arranged to permit systolic processing of a problem by offering wide data buses and a plurality of processing nodes. The board contains a clock reference and clock distribution tree that can drive each of the PLDs with two critically timed clock references. External clock references can be used to drive additional circuit modules all operating from the same synchronous clock reference.

  13. Relativistic electron beam generator

    DOE Patents [OSTI]

    Mooney, L.J.; Hyatt, H.M.

    1975-11-11

    A relativistic electron beam generator for laser media excitation is described. The device employs a diode type relativistic electron beam source having a cathode shape which provides a rectangular output beam with uniform current density.

  14. Encapsulation methods and dielectric layers for organic electrical devices

    DOE Patents [OSTI]

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  15. A novel electron density reconstruction method for asymmetrical toroidal plasmas

    SciTech Connect (OSTI)

    Shi, N.; Ohshima, S.; Minami, T.; Nagasaki, K.; Yamamoto, S.; Mizuuchi, T.; Okada, H.; Kado, S.; Kobayashi, S.; Konoshima, S.; Sano, F.; Tanaka, K.; Ohtani, Y.; Zang, L.; Kenmochi, N.

    2014-05-15

    A novel reconstruction method is developed for acquiring the electron density profile from multi-channel interferometric measurements of strongly asymmetrical toroidal plasmas. It is based on a regularization technique, and a generalized cross-validation function is used to optimize the regularization parameter with the aid of singular value decomposition. The feasibility of method could be testified by simulated measurements based on a magnetic configuration of the flexible helical-axis heliotron device, Heliotron J, which has an asymmetrical poloidal cross section. And the successful reconstruction makes possible to construct a multi-channel Far-infrared laser interferometry on this device. The advantages of this method are demonstrated by comparison with a conventional method. The factors which may affect the accuracy of the results are investigated, and an error analysis is carried out. Based on the obtained results, the proposed method is highly promising for accurately reconstructing the electron density in the asymmetrical toroidal plasma.

  16. Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices

    SciTech Connect (OSTI)

    2009-12-11

    Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices aren’t new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the device’s efficiency and enable electronics manufacturers to more easily integrate them into their products.

  17. Electronic structure of the polymer-cathode interface of an organic electroluminescent device investigated using operando hard x-ray photoelectron spectroscopy

    SciTech Connect (OSTI)

    Ikeuchi, J.; Hamamatsu, H.; Miyamoto, T.; Tanaka, S.; Yamashita, Y.; Yoshikawa, H.; Ueda, S.

    2015-08-28

    The electronic structure of a polymer-cathode interface of an operating organic light-emitting diode (OLED) was directly investigated using hard X-ray photoelectron spectroscopy (HAXPES). The potential distribution profile of the light-emitting copolymer layer as a function of the depth under the Al/Ba cathode layer in the OLED depended on the bias voltage. We found that band bending occurred in the copolymer of 9,9-dioctylfluorene (50%) and N-(4-(2-butyl)-phenyl)diphenylamine (F8-PFB) layer near the cathode at 0 V bias, while a linear potential distribution formed in the F8-PFB when a bias voltage was applied to the OLED. Direct observation of the built-in potential and that band bending formed in the F8-PFB layer in the operating OLED suggested that charges moved in the F8-PFB layer before electron injection from the cathode.

  18. Guide wire extension for shape memory polymer occlusion removal devices

    DOE Patents [OSTI]

    Maitland, Duncan J.; Small, IV, Ward; Hartman, Jonathan

    2009-11-03

    A flexible extension for a shape memory polymer occlusion removal device. A shape memory polymer instrument is transported through a vessel via a catheter. A flexible elongated unit is operatively connected to the distal end of the shape memory polymer instrument to enhance maneuverability through tortuous paths en route to the occlusion.

  19. Library Analog Semiconductor Devices SPICE Simulators

    Energy Science and Technology Software Center (OSTI)

    1996-07-23

    SPICE-SANDIA.LIB is a library of parameter sets and macromodels of semiconductor devices. They are used with Spice-based (SPICE is a program for electronic circuit analysis) simulators to simulate electronic circuits.

  20. Hyperpolarizable compounds and devices fabricated therefrom

    DOE Patents [OSTI]

    Therien, Michael J.; DiMagno, Stephen G.

    1998-01-01

    Substituted compounds having relatively large molecular first order hyperpolarizabilities are provided, along with devices and materials containing them. In general, the compounds bear electron-donating and electron-withdrawing chemical substituents on a polyheterocyclic core.

  1. Hyperpolarizable compounds and devices fabricated therefrom

    DOE Patents [OSTI]

    Therien, M.J.; DiMagno, S.G.

    1998-07-21

    Substituted compounds having relatively large molecular first order hyperpolarizabilities are provided, along with devices and materials containing them. In general, the compounds bear electron-donating and electron-withdrawing chemical substituents on a polyheterocyclic core. 13 figs.

  2. Implantable biomedical devices on bioresorbable substrates

    SciTech Connect (OSTI)

    Rogers, John A; Kim, Dae-Hyeong; Omenetto, Fiorenzo; Kaplan, David L; Litt, Brian; Viventi, Jonathan; Huang, Yonggang; Amsden, Jason

    2014-03-04

    Provided herein are implantable biomedical devices, methods of administering implantable biomedical devices, methods of making implantable biomedical devices, and methods of using implantable biomedical devices to actuate a target tissue or sense a parameter associated with the target tissue in a biological environment. Each implantable biomedical device comprises a bioresorbable substrate, an electronic device having a plurality of inorganic semiconductor components supported by the bioresorbable substrate, and a barrier layer encapsulating at least a portion of the inorganic semiconductor components. Upon contact with a biological environment the bioresorbable substrate is at least partially resorbed, thereby establishing conformal contact between the implantable biomedical device and the target tissue in the biological environment.

  3. Electrochromic optical switching device

    DOE Patents [OSTI]

    Lampert, Carl M.; Visco, Steven J.

    1992-01-01

    An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source.

  4. Electrochromic optical switching device

    DOE Patents [OSTI]

    Lampert, C.M.; Visco, S.J.

    1992-08-25

    An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source. 3 figs.

  5. Organic photosensitive devices

    DOE Patents [OSTI]

    Peumans, Peter; Forrest, Stephen R.

    2013-01-22

    A photoactive device is provided. The device includes a first electrode, a second electrode, and a photoactive region disposed between and electrically connected to the first and second electrodes. The photoactive region further includes an organic donor layer and an organic acceptor layer that form a donor-acceptor heterojunction. The mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region are different by a factor of at least 100, and more preferably a factor of at least 1000. At least one of the mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region is greater than 0.001 cm.sup.2/V-sec, and more preferably greater than 1 cm.sup.2/V-sec. The heterojunction may be of various types, including a planar heterojunction, a bulk heterojunction, a mixed heterojunction, and a hybrid planar-mixed heterojunction.

  6. Light modulating device

    DOE Patents [OSTI]

    Rauh, R. David; Goldner, Ronald B.

    1989-01-01

    In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity.

  7. Light modulating device

    DOE Patents [OSTI]

    Rauh, R.D.; Goldner, R.B.

    1989-12-26

    In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity are disclosed. 1 fig.

  8. PLASMA DEVICE

    DOE Patents [OSTI]

    Baker, W.R.; Brathenahl, A.; Furth, H.P.

    1962-04-10

    A device for producing a confined high temperature plasma is described. In the device the concave inner surface of an outer annular electrode is disposed concentrically about and facing the convex outer face of an inner annular electrode across which electrodes a high potential is applied to produce an electric field there between. Means is provided to create a magnetic field perpendicular to the electric field and a gas is supplied at reduced pressure in the area therebetween. Upon application of the high potential, the gas between the electrodes is ionized, heated, and under the influence of the electric and magnetic fields there is produced a rotating annular plasma disk. The ionized plasma has high dielectric constant properties. The device is useful as a fast discharge rate capacitor, in controlled thermonuclear research, and other high temperature gas applications. (AEC)

  9. Release strategies for making transferable semiconductor structures, devices and device components

    DOE Patents [OSTI]

    Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J.

    2011-04-26

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  10. Release strategies for making transferable semiconductor structures, devices and device components

    DOE Patents [OSTI]

    Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J.

    2016-05-24

    Provided are methods for making a device or device component by providing a multi layer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.