National Library of Energy BETA

Sample records for flexible electronic devices

  1. Flexible Electronics New Devices on Nearly Any Type of Substrate

    E-Print Network [OSTI]

    Rogers, John A.

    Flexible Electronics ­ New Devices on Nearly Any Type of Substrate by Angelika Boeer published: 2011-07-06 Flexible electronic devices ­ this is a fascinating topic and becoming more and more such as display systems, flexible and stretchable electronics, or other, no-waver-based devices. Sign up

  2. Semiconductor-based, large-area, flexible, electronic devices

    DOE Patents [OSTI]

    Goyal, Amit (Knoxville, TN)

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  3. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    DOE Patents [OSTI]

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  4. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    DOE Patents [OSTI]

    Goyal, Amit (Knoxville, TN)

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  5. Adhesive flexible barrier film, method of forming same, and organic electronic device including same

    DOE Patents [OSTI]

    Blizzard, John Donald; Weidner, William Kenneth

    2013-02-05

    An adhesive flexible barrier film comprises a substrate and a barrier layer disposed on the substrate. The barrier layer is formed from a barrier composition comprising an organosilicon compound. The adhesive flexible barrier film also comprises an adhesive layer disposed on the barrier layer and formed from an adhesive composition. A method of forming the adhesive flexible barrier film comprises the steps of disposing the barrier composition on the substrate to form the barrier layer, disposing the adhesive composition on the barrier layer to form the adhesive layer, and curing the barrier layer and the adhesive layer. The adhesive flexible barrier film may be utilized in organic electronic devices.

  6. Flexible barrier film, method of forming same, and organic electronic device including same

    DOE Patents [OSTI]

    Blizzard, John; Tonge, James Steven; Weidner, William Kenneth

    2013-03-26

    A flexible barrier film has a thickness of from greater than zero to less than 5,000 nanometers and a water vapor transmission rate of no more than 1.times.10.sup.-2 g/m.sup.2/day at 22.degree. C. and 47% relative humidity. The flexible barrier film is formed from a composition, which comprises a multi-functional acrylate. The composition further comprises the reaction product of an alkoxy-functional organometallic compound and an alkoxy-functional organosilicon compound. A method of forming the flexible barrier film includes the steps of disposing the composition on a substrate and curing the composition to form the flexible barrier film. The flexible barrier film may be utilized in organic electronic devices.

  7. Flexible and Stretchable Electronics for Biointegrated

    E-Print Network [OSTI]

    Rogers, John A.

    Flexible and Stretchable Electronics for Biointegrated Devices Dae-Hyeong Kim,1 Roozbeh Ghaffari,2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 3. FLEXIBLE AND STRETCHABLE ELECTRONICS AND OPTOELECTRONICS by Annual Reviews. All rights reserved 1523-9829/12/0815-0113$20.00 Keywords electrophysiology, flexible

  8. Flexible Electronics Could Find Applications As Sensors, Artificial Muscles

    E-Print Network [OSTI]

    Rogers, John A.

    Flexible Electronics Could Find Applications As Sensors, Artificial Muscles Science Daily -- Flexible electronic structures with the potential to bend, expand and manipulate electronic devices. In addition to a biomedical impact, flexible electronics are important for energy technology as flexible

  9. Transfer and characterization of silicon nanomembrane based photonic devices on flexible polyimide substrate

    E-Print Network [OSTI]

    Texas at Austin, University of

    Transfer and characterization of silicon nanomembrane based photonic devices on flexible polyimide nanomembrane based photonic devices on a Kapton polyimide flexible substrate. Compared with electronic devices

  10. Integration of indium phosphide based devices with flexible substrates

    E-Print Network [OSTI]

    Chen, Wayne Huai

    2011-01-01

    Brandon, W. West, L. Zhou et al. , “Flexible electronics forspace applications,” Flexible Electronics, 219–230 (2004). [1.1 Conventional flexible electronics Flexible substrates

  11. Direct Writing of Half-Meter Long CNT Based Fiber for Flexible Electronics

    E-Print Network [OSTI]

    Cui, Yi

    Direct Writing of Half-Meter Long CNT Based Fiber for Flexible Electronics Sihan Huang, Chunsong blocks for flexible electronic devices. We demon- strated that, by a simple hand-writing process, carbon: Ultralong fibers, aligned CNTs, controlled assembly, flexible electronics Flexibility of electronic devices

  12. Electronic security device

    DOE Patents [OSTI]

    Eschbach, Eugene A. (Richland, WA); LeBlanc, Edward J. (Kennewick, WA); Griffin, Jeffrey W. (Kennewick, WA)

    1992-01-01

    The present invention relates to a security device having a control box (12) containing an electronic system (50) and a communications loop (14) over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system (50) and a detection module (72) capable of registering changes in the voltage and phase of the signal transmitted over the loop.

  13. Electronic security device

    DOE Patents [OSTI]

    Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

    1992-03-17

    The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs.

  14. Published: 21 hours ago, 15:32 EST, April 02, 2007 Flexible electronics could find applications a

    E-Print Network [OSTI]

    Rogers, John A.

    Published: 21 hours ago, 15:32 EST, April 02, 2007 Flexible electronics could find applications that are functionalized for surface ch stretchability. Credit: Argonne National Laboratory Flexible electronic structures Laboratory and the University of Illinois at Urbana-Champaign. These flexible structure as electronic devices

  15. Gate dielectric development for flexible electronics

    SciTech Connect (OSTI)

    Joshi, P. C.; Voutsas, A. T.; Hartzell, J. W. [LCD Process Technology Laboratories, SHARP Laboratories of America, Inc., 5700 NW Pacific Rim Blvd., Camas, Washington 98607 (United States)

    2007-07-15

    Thin film transistors integrated on flexible substrates are becoming increasingly attractive for low cost displays, sensors, and rf communication applications. The successful development of the flexible devices will be dictated by the enhancement in the thermal stability of the substrates and the low temperature (<300 deg. C) processing of the gate dielectric. The plasma-enhanced chemical-vapor deposition (PECVD) technique has successfully met the demands of the gate dielectric for display devices at processing temperatures lower than 600 deg. C. However, a further reduction in the processing temperatures below 300 deg. C is essential to realize low cost, highly functional devices on flexible substrates. The low temperature processing of gate dielectric films necessitates the development of processes and techniques with plasma controlled reaction kinetics dominating the thin film growth rather than the thermal state of the substrate. In the present work, the authors report on the processing of high quality gate dielectric films by high density PECVD technique at process temperatures lower than 300 deg. C. The bulk and interfacial electrical quality and reliability of the metal-oxide-semiconductor capacitors as a function of process temperature are discussed in this article. A comparison with the high temperature gate oxide films deposited by PECVD technique employing capacitively coupled plasma source has been made to establish the film quality and reliability. The films processed at low temperatures have shown good electrical performance and reliability as evaluated in terms of the leakage current, flatband voltage, midgap interface trap concentration, and bias temperature stress reliability characteristics.

  16. Stretchable and foldable electronic devices

    DOE Patents [OSTI]

    2013-10-08

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  17. Stretchable and foldable electronic devices

    DOE Patents [OSTI]

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2014-12-09

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  18. A Tunable Hemispherical Platform for Non-Stretching Curved Flexible Electronics and Optoelectronics

    E-Print Network [OSTI]

    Ju, Y. Sungtaek

    2014-01-01

    Stretching Curved Flexible Electronics and Optoelectronicsin incorporating flexible electronics or optoelectronics onin so-called flexible electronics and optoelectronics for a

  19. 1562 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 10, OCTOBER 2004 Opto-Electronic Properties of Poly (Fluorene)

    E-Print Network [OSTI]

    Kanicki, Jerzy

    substrate. I. INTRODUCTION TODAY, ORGANIC light-emitting device (OLED) tech- nology is believed to be one-Electronic Properties of Poly (Fluorene) Co-Polymer Red Light-Emitting Devices on Flexible Plastic Substrate Yongtaek on the multilayer poly (fluo- rene) co-polymer red light-emitting devices (PLEDs) fabricated on flexible plastic

  20. Flexible Electronics One Step Closer With New Circuits http://news.nationalgeographic.com/news/2005/12/1215_051215_flexibl... 1 of 3 12/15/2005 4:55 PM

    E-Print Network [OSTI]

    Rogers, John A.

    Flexible Electronics One Step Closer With New Circuits http://news.nationalgeographic.com/news/2005 > Science & Space Flexible Electronics One Step Closer With New Circuits Ben Harder for National Geographic ability to function. Flexible circuits could give electronic devices--including digital cameras, i

  1. Mechanically flexible organic electroluminescent device with directional light emission

    DOE Patents [OSTI]

    Duggal, Anil Raj; Shiang, Joseph John; Schaepkens, Marc

    2005-05-10

    A mechanically flexible and environmentally stable organic electroluminescent ("EL") device with directional light emission comprises an organic EL member disposed on a flexible substrate, a surface of which is coated with a multilayer barrier coating which includes at least one sublayer of a substantially transparent organic polymer and at least one sublayer of a substantially transparent inorganic material. The device includes a reflective metal layer disposed on the organic EL member opposite to the substrate. The reflective metal layer provides an increased external quantum efficiency of the device. The reflective metal layer and the multilayer barrier coating form a seal around the organic EL member to reduce the degradation of the device due to environmental elements.

  2. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect (OSTI)

    Seo, Won-Oh; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 136-713 (Korea, Republic of); Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol [Radiation Integrated System Research Division, Korea Atomic Energy Research Institute (KAERI), Daejeon 305-353 (Korea, Republic of); Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2?MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  3. Stamp printing of silicon-nanomembrane-based photonic devices onto flexible

    E-Print Network [OSTI]

    Texas at Austin, University of

    of America OCIS codes: 220.4000, 220.4241, 130.1750, 130.5296. To date, most flexible electronics opportunities in flexible electronics and photonics have been explored. Among all transferable single in flexible electronics and surface normal photonics, including flexible and rollable paperlike displays [6

  4. Electron emitting filaments for electron discharge devices

    DOE Patents [OSTI]

    Leung, Ka-Ngo (Hercules, CA); Pincosy, Philip A. (Oakland, CA); Ehlers, Kenneth W. (Alamo, CA)

    1988-01-01

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600.degree. C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for non-uniform current distribution along the filament due to the emission of electrons from the filament.

  5. Electron emitting filaments for electron discharge devices

    DOE Patents [OSTI]

    Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

    1983-06-10

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600/sup 0/C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for nonuniform current distribution along the filament due to the emission of electrons from the filament.

  6. Adhesion in flexible organic and hybrid organic/inorganic light emitting device and solar cells

    SciTech Connect (OSTI)

    Yu, D.; Kwabi, D.; Akogwu, O.; Du, J. [Princeton Institute of Science and Technology of Materials, Princeton University, 70 Prospect Street, Princeton, New Jersey 08544 (United States); Department of Mechanical and Aerospace Engineering, Princeton University, Olden Street, Princeton, New Jersey 08544 (United States); Oyewole, O. K. [Department of Theoretical and Applied Physics, African University of Science and Technology, Km 10, Airport Road, Galadimawa, Abuja, Federal Capital Territory (Nigeria); Department of Materials Science and Engineering, Kwara State University, Malete, Kwara State (Nigeria); Tong, T. [Princeton Institute of Science and Technology of Materials, Princeton University, 70 Prospect Street, Princeton, New Jersey 08544 (United States); Department of Electrical Engineering, Princeton University, Olden Street, Princeton, New Jersey 08544 (United States); Anye, V. C.; Rwenyagila, E. [Department of Materials Science and Engineering, African University of Science and Technology, Km 10, Airport Road, Galadimawa, Abuja, Federal Capital Territory (Nigeria); Asare, J.; Fashina, A. [Department of Theoretical and Applied Physics, African University of Science and Technology, Km 10, Airport Road, Galadimawa, Abuja, Federal Capital Territory (Nigeria); Soboyejo, W. O. [Princeton Institute of Science and Technology of Materials, Princeton University, 70 Prospect Street, Princeton, New Jersey 08544 (United States); Department of Mechanical and Aerospace Engineering, Princeton University, Olden Street, Princeton, New Jersey 08544 (United States); Department of Materials Science and Engineering, African University of Science and Technology, Km 10, Airport Road, Galadimawa, Abuja, Federal Capital Territory (Nigeria)

    2014-08-21

    This paper presents the results of an experimental study of the adhesion between bi-material pairs that are relevant to organic light emitting devices, hybrid organic/inorganic light emitting devices, organic bulk heterojunction solar cells, and hybrid organic/inorganic solar cells on flexible substrates. Adhesion between the possible bi-material pairs is measured using force microscopy (AFM) techniques. These include: interfaces that are relevant to organic light emitting devices, hybrid organic/inorganic light emitting devices, bulk heterojunction solar cells, and hybrid combinations of titanium dioxide (TiO{sub 2}) and poly(3-hexylthiophene). The results of AFM measurements are incorporated into the Derjaguin-Muller-Toporov model for the determination of adhesion energies. The implications of the results are then discussed for the design of robust organic and hybrid organic/inorganic electronic devices.

  7. Approved for Public Release, Distribution Unlimited Flexible and large area electronics (macroelectronics) using

    E-Print Network [OSTI]

    Alam, Muhammad A.

    Approved for Public Release, Distribution Unlimited 1 Flexible and large area electronics high performance applications to include RF systems. Keywords--Flexible electronics, large area electronics, macroelectronics, thin film transistors I. INTRODUCTION Flexible and large area electronics using

  8. Inorganic semiconductor nanomaterials for flexible and stretchable bio-integrated electronics

    E-Print Network [OSTI]

    Rogers, John A.

    -integrated electronics; flexible electronics; semiconductor nanomaterials; stretchable electronics; transfer printing flexible/stretchable electronics, in which semiconductor nanomaterials serve as the active componentsREVIEW Inorganic semiconductor nanomaterials for flexible and stretchable bio

  9. Controlled Assembly of High Density SWNT Networks on a Flexible Parylene-C C.-L. Chen1,*

    E-Print Network [OSTI]

    Dokmeci, Mehmet

    substrates has immediate applications in wearable electronics and sensors, flexible field effect transistors desirable to fabricate integrated nanotube- polymer flexible electronic devices at room temperature devices on flexible substrates potentially useful in numerous fields including flexible electronics

  10. Development of Barrier Films for Packaging Flexible Electronics

    E-Print Network [OSTI]

    Das, Suman

    Pum, Applied Materials, SRC #12;3/23/15 2 Solid State Lighting Flexible Challenges for Other Devices Exposure to moisture can cause degradaPon in both OLED CIGS Requirement of OLEDs Food / PharmaceuDcal packaging Commercial polymer

  11. High-precision transfer-printing and integration of vertically oriented semiconductor arrays for flexible

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    transfer printing, nanowires, flexible electronics, printable electronics, nanoscale devices ABSTRACT Flexible electronics utilizing single crystalline semiconductors typically require post-growth processes devices. High performance electronics on flexible substrates have been gaining attention from research

  12. Diamonds are an Electronic Device’s Best Friend

    Broader source: Energy.gov [DOE]

    Researchers at Argonne National Lab recently devised a way to use diamonds to brighten the performance of electronic devices, which could put a bit more sparkle in everyone’s day.

  13. Microelectronic Devices and Circuits - 2006 Electronic Edition

    E-Print Network [OSTI]

    Fonstad, Clifton

    2006-10-01

    Combining semiconductor device physics and modeling with electronic circuit analysis and practice in a single sophomore/junior level microelectronics course, this textbook offers an integrated approach so students can truly ...

  14. Laser Assisted Nanomanufacturing with Solution Processed Nanoparticles for Low-cost Electronics and Photovoltaics

    E-Print Network [OSTI]

    Pan, Heng

    2009-01-01

    etc. Fig. 1. 1 Flexible electronics and flexible solarFig. 3.3 Fig. 3.4 Flexible electronics and flexible solarEnergy Harvesting Devices Flexible electronics refers to the

  15. Institute of Photo Electronic Thin Film Devices and Technology...

    Open Energy Info (EERE)

    Institute of Photo Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name: Institute of Photo-Electronic Thin Film Devices and Technology...

  16. Design of Compliant Meanders for Applications in MEMS, Actuators, and Flexible Electronics

    E-Print Network [OSTI]

    Shapiro, Benjamin

    1 Design of Compliant Meanders for Applications in MEMS, Actuators, and Flexible Electronics Bavani-electro-mechanical systems (MEMS) to stretchable electrodes in flexible electronics and dielectric elastomer actuators are required in flexible displays [4], stretchable circuits [5], flexible antennas [6], and dielectric

  17. A Flexible Active-Matrix Electronic Paper With Integrated Display Driver Using The -Czochralski

    E-Print Network [OSTI]

    A Flexible Active-Matrix Electronic Paper With Integrated Display Driver Using The µ on the display itself. The display is flexible, including the driving electronics. Technology used offers great possibilities for future applications e.g. flexible electronics, three dimensional IC, System-on-Panel, ultra

  18. Apparatus And Method Of Using Flexible Printed Circuit Board In Optical Transceiver Device

    DOE Patents [OSTI]

    Anderson, Gene R. (Albuquerque, NM); Armendariz, Marcelino G. (Albuquerque, NM); Bryan, Robert P. (Albuquerque, NM); Carson, Richard F. (Albuquerque, NM); Duckett, III, Edwin B. (Albuquerque, NM); McCormick, Frederick B. (Albuquerque, NM); Peterson, David W. (Sandia Park, NM); Peterson, Gary D. (Albuquerque, NM); Reysen, Bill H. (Lafayette, CO)

    2005-03-15

    This invention relates to a flexible printed circuit board that is used in connection with an optical transmitter, receiver or transceiver module. In one embodiment, the flexible printed circuit board has flexible metal layers in between flexible insulating layers, and the circuit board comprises: (1) a main body region orientated in a first direction having at least one electrical or optoelectronic device; (2) a plurality of electrical contact pads integrated into the main body region, where the electrical contact pads function to connect the flexible printed circuit board to an external environment; (3) a buckle region extending from one end of the main body region; and (4) a head region extending from one end of the buckle region, and where the head region is orientated so that it is at an angle relative to the direction of the main body region. The electrical contact pads may be ball grid arrays, solder balls or land-grid arrays, and they function to connect the circuit board to an external environment. A driver or amplifier chip may be adapted to the head region of the flexible printed circuit board. In another embodiment, a heat spreader passes along a surface of the head region of the flexible printed circuit board, and a window is formed in the head region of the flexible printed circuit board. Optoelectronic devices are adapted to the head spreader in such a manner that they are accessible through the window in the flexible printed circuit board.

  19. Flexible pipe crawling device having articulated two axis coupling

    DOE Patents [OSTI]

    Zollinger, W.T.

    1994-05-10

    An apparatus is described for moving through the linear and non-linear segments of piping systems. The apparatus comprises a front leg assembly, a rear leg assembly, a mechanism for extension and retraction of the front and rear leg assembles with respect to each other, such as an air cylinder, and a pivoting joint. One end of the flexible joint attaches to the front leg assembly and the other end to the air cylinder, which is also connected to the rear leg assembly. The air cylinder allows the front and rear leg assemblies to progress through a pipe in inchworm' fashion, while the joint provides the flexibility necessary for the pipe crawler to negotiate non-linear piping segments. The flexible connecting joint is coupled with a spring-force suspension system that urges alignment of the front and rear leg assemblies with respect to each other. The joint and suspension system cooperate to provide a firm yet flexible connection between the front and rear leg assemblies to allow the pivoting of one with respect to the other while moving around a non-linear pipe segment, but restoring proper alignment coming out of the pipe bend. 4 figures.

  20. Electron holography of devices with epitaxial layers

    SciTech Connect (OSTI)

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0}?=?12.75?V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge}?=?18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L?=?30?nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  1. Towards reproducible, scalable lateral molecular electronic devices

    SciTech Connect (OSTI)

    Durkan, Colm Zhang, Qian

    2014-08-25

    An approach to reproducibly fabricate molecular electronic devices is presented. Lateral nanometer-scale gaps with high yield are formed in Au/Pd nanowires by a combination of electromigration and Joule-heating-induced thermomechanical stress. The resulting nanogap devices are used to measure the electrical properties of small numbers of two different molecular species with different end-groups, namely 1,4-butane dithiol and 1,5-diamino-2-methylpentane. Fluctuations in the current reveal that in the case of the dithiol molecule devices, individual molecules conduct intermittently, with the fluctuations becoming more pronounced at larger biases.

  2. Susceptor heating device for electron beam brazing

    DOE Patents [OSTI]

    Antieau, Susan M. (Pittsburgh, PA); Johnson, Robert G. R. (Trafford, PA)

    1999-01-01

    A brazing device and method are provided which locally apply a controlled amount of heat to a selected area, within a vacuum. The device brazes two components together with a brazing metal. A susceptor plate is placed in thermal contact with one of the components. A serrated pedestal supports the susceptor plate. When the pedestal and susceptor plate are in place, an electron gun irradiates an electron beam at the susceptor plate such that the susceptor plate is sufficiently heated to transfer heat through the one component and melt the brazing metal.

  3. Organic electronic devices using phthalimide compounds

    DOE Patents [OSTI]

    Hassan, Azad M.; Thompson, Mark E.

    2010-09-07

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  4. Organic electronic devices using phthalimide compounds

    DOE Patents [OSTI]

    Hassan, Azad M.; Thompson, Mark E.

    2012-10-23

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  5. Organic electronic devices using phthalimide compounds

    DOE Patents [OSTI]

    Hassan, Azad M.; Thompson, Mark E.

    2013-03-19

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  6. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOE Patents [OSTI]

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2013-02-19

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  7. Translating semiconductor device physics into nanoparticle films for electronic applications

    E-Print Network [OSTI]

    Wanger, Darcy Deborah

    2014-01-01

    This thesis explores and quantifies some of the important device physics, parameters, and mechanisms of semiconductor nanocrystal quantum dot (QD) electronic devices, and photovoltaic devices in particular. This involves ...

  8. Method for integrating microelectromechanical devices with electronic circuitry

    DOE Patents [OSTI]

    Montague, S.; Smith, J.H.; Sniegowski, J.J.; McWhorter, P.J.

    1998-08-25

    A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry. 13 figs.

  9. Method for integrating microelectromechanical devices with electronic circuitry

    DOE Patents [OSTI]

    Montague, Stephen (Albuquerque, NM); Smith, James H. (Albuquerque, NM); Sniegowski, Jeffry J. (Albuquerque, NM); McWhorter, Paul J. (Albuquerque, NM)

    1998-01-01

    A method for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry.

  10. Phonon dispersion and quantization tuning of strained carbon nanotubes for flexible electronics

    SciTech Connect (OSTI)

    Gautreau, Pierre; Chu, Yanbiao; Basaran, Cemal; Ragab, Tarek

    2014-06-28

    Graphene and carbon nanotubes are materials with large potentials for applications in flexible electronics. Such devices require a high level of sustainable strain and an understanding of the materials electrical properties under strain. Using supercell theory in conjunction with a comprehensive molecular mechanics model, the full band phonon dispersion of carbon nanotubes under uniaxial strain is studied. The results suggest an overall phonon softening and open up the possibility of phonon quantization tuning with uniaxial strain. The change in phonon quantization and the resulting increase in electron-phonon and phonon-phonon scattering rates offer further explanation and theoretical basis to the experimental observation of electrical properties degradation for carbon nanotubes under uniaxial strain.

  11. FlexSEA : flexible, scalable electronics architecture for wearable robotic applications

    E-Print Network [OSTI]

    Duval, Jean-François, S.M. Massachusetts Institute of Technology

    2015-01-01

    The work of this thesis aims to enable the fast prototyping of multi-axis wearable robotic systems by developing a new modular electronics system. The flexible, scalable electronics architecture (FlexSEA) developed for ...

  12. Theory and simulation of amorphous organic electronic devices

    E-Print Network [OSTI]

    Madigan, Conor (Conor Francis), 1978-

    2006-01-01

    The electronic properties of amorphous organic thin films are of great interest due to their application in devices such as light emitting devices, solar cells, photodetectors, and lasers. Compared to conventional inorganic ...

  13. Flexible Electronic Building Blocks DOI: 10.1002/anie.200703238

    E-Print Network [OSTI]

    Rogers, John A.

    systems have led to enormous increases in speed, functionality, and computing capacity. This trend-ray imagers, flexible photovoltaic systems, paper-like displays, conformal structural health monitors

  14. Flexible and Transparent Memory

    E-Print Network [OSTI]

    KIM, SUNG MIN

    2012-01-01

    Transparent and Flexible Electronics," Nat. Nanotechnol. ,Wong and A. Salleo. , "Flexible Electronics: Materials andcompletely see- through flexible electronics and change the

  15. Area "Electronic and Photonic Materials and Devices" Electronic and Photonic Materials and Devices Specialization in Bachelor Program

    E-Print Network [OSTI]

    Grabner, Helmut

    as it plays an important role in various fields such as communications, energy harvesting (solar cellsArea "Electronic and Photonic Materials and Devices" 1 / 2 Electronic and Photonic Materials and Devices Specialization in Bachelor Program Core Recommendations: The "Electronic and Photonic Materials

  16. Electron beam directed energy device and methods of using same

    DOE Patents [OSTI]

    Retsky, Michael W. (Trumbull, CT)

    2007-10-16

    A method and apparatus is disclosed for an electron beam directed energy device. The device consists of an electron gun with one or more electron beams. The device includes one or more accelerating plates with holes aligned for beam passage. The plates may be flat or preferably shaped to direct each electron beam to exit the electron gun at a predetermined orientation. In one preferred application, the device is located in outer space with individual beams that are directed to focus at a distant target to be used to impact and destroy missiles. The aimings of the separate beams are designed to overcome Coulomb repulsion. A method is also presented for directing the beams to a target considering the variable terrestrial magnetic field. In another preferred application, the electron beam is directed into the ground to produce a subsurface x-ray source to locate and/or destroy buried or otherwise hidden objects including explosive devices.

  17. Boron Nanowires for Flexible Electronics and Field Jifa Tian, Jinming Cai, Chao Hui, Chen Li, Yuan Tian, Chengmin Shen and

    E-Print Network [OSTI]

    Gao, Hongjun

    Boron Nanowires for Flexible Electronics and Field Emission Jifa Tian, Jinming Cai, Chao Hui, Chen. Electronics, Flexibility, Field emission. PACS: 61. 62. Km; 62. 23. Hj; 68. 37. Og; 73.63-b INTRODUCTION Analogues to the revolutionary miniaturization in electronic industry initiated in 1950s, flexible

  18. Can Clinicians Create High-Quality Databases? A Study on A Flexible Electronic Health Record (fEHR) System

    E-Print Network [OSTI]

    Song, Il-Yeol

    Can Clinicians Create High-Quality Databases? A Study on A Flexible Electronic Health Record (f propose a flexible Electronic Health Record (fEHR) system, which allows clinicians to build new templates implementation of HIT, the electronic health record(EHR)[9, 19], and propose a flexible EHR (fEHR) system. The f

  19. GTMI's Printed/Flexible Electronics Workshop March 19, 2015 1 Opportuni)es for Collabora)ve R&D

    E-Print Network [OSTI]

    Das, Suman

    3/23/15 1 GTMI's Printed/Flexible Electronics Workshop March 19, 2015 1 Opportuni Associate II, GTMI (404)-385-1935 billyde.brown@gatech.edu GTMI's Printed/Flexible Electronics/contracts ØCorporate sponsorship #12;3/23/15 2 GTMI's Printed/Flexible Electronics Workshop March 19

  20. Metrology and instrumentation challenges with high-rate, roll-to-roll manufacturing of flexible electronic systems

    E-Print Network [OSTI]

    Chen, Ray

    in order to realize true implementation of roll-to-roll manufacturing of flexible electronic systems-to-roll manufacturing system for flexible electronic systems opens limitless possibilities for the deployment of high performance flexible electronic components in a variety of applications including communication, sensing

  1. Roll-to-roll atomic layer deposition process for flexible electronics encapsulation applications

    SciTech Connect (OSTI)

    Maydannik, Philipp S., E-mail: philipp.maydannik@lut.fi; Kääriäinen, Tommi O.; Lahtinen, Kimmo; Cameron, David C. [Advanced Surface Technology Research Laboratory, Lappeenranta University of Technology, Sammonkatu 12, 50130 Mikkeli (Finland); Söderlund, Mikko; Soininen, Pekka [Beneq Oy, P.O. Box 262, 01511 Vantaa (Finland); Johansson, Petri; Kuusipalo, Jurkka [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 589, 33101 Tampere (Finland); Moro, Lorenza; Zeng, Xianghui [Samsung Cheil Industries, San Jose R and D Center, 2186 Bering Drive, San Jose, California 95131 (United States)

    2014-09-01

    At present flexible electronic devices are under extensive development and, among them, flexible organic light-emitting diode displays are the closest to a large market deployment. One of the remaining unsolved challenges is high throughput production of impermeable flexible transparent barrier layers that protect sensitive light-emitting materials against ambient moisture. The present studies deal with the adaptation of the atomic layer deposition (ALD) process to high-throughput roll-to-roll production using the spatial ALD concept. We report the development of such a process for the deposition of 20?nm thickness Al{sub 2}O{sub 3} diffusion barrier layers on 500?mm wide polymer webs. The process uses trimethylaluminum and water as precursors at a substrate temperature of 105?°C. The observation of self-limiting film growth behavior and uniformity of thickness confirms the ALD growth mechanism. Water vapor transmission rates for 20?nm Al{sub 2}O{sub 3} films deposited on polyethylene naphthalate (PEN) substrates were measured as a function of substrate residence time, that is, time of exposure of the substrate to one precursor zone. Moisture permeation levels measured at 38?°C/90% relative humidity by coulometric isostatic–isobaric method were below the detection limit of the instrument (<5?×?10{sup ?4}?g/m{sup 2} day) for films coated at web moving speed of 0.25?m/min. Measurements using the Ca test indicated water vapor transmission rates ?5?×?10{sup ?6} g/m{sup 2} day. Optical measurements on the coated web showed minimum transmission of 80% in the visible range that is the same as the original PEN substrate.

  2. Engineering & Technology News | Industrial News Buzz Flexible electronics could help put Arrhythmic hearts back on rhythm

    E-Print Network [OSTI]

    Rogers, John A.

    Engineering & Technology News | Industrial News Buzz Flexible electronics could help put Arrhythmic hearts back on rhythm Home Engineering Store Products & Services Engineering Forum CAD Forum Engineering Design Data Engineering News Engineering Calculators Newsletter Register Advertise Feedback GD&T Training

  3. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOE Patents [OSTI]

    Black, Marcie R.

    2013-04-09

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  4. Transferred metal electrode films for large-area electronic devices...

    Office of Scientific and Technical Information (OSTI)

    metal electrode films for large-area electronic devices The evaporation of metal-film gate electrodes for top-gate organic field-effect transistors (OFETs) limits the...

  5. Molecular Electronics: From Devices and Interconnect to Circuits and Architecture

    E-Print Network [OSTI]

    Goldstein, Seth Copen

    of these emerging nanotechnologies is the assumption that some form of self-assembly will be required to fabricateMolecular Electronics: From Devices and Interconnect to Circuits and Architecture MIRCEA R. STAN and architecture. Based on proposed nanoscale interconnect and device structures, we explore the design space

  6. Method for integrating microelectromechanical devices with electronic circuitry

    DOE Patents [OSTI]

    Barron, Carole C. (Austin, TX); Fleming, James G. (Albuquerque, NM); Montague, Stephen (Albuquerque, NM)

    1999-01-01

    A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.

  7. Electron transport in closed EB drift devices

    E-Print Network [OSTI]

    Kaganovich, Igor

    conductivity · Summary #12;3 Plasma immersion ion implantation cathode: Titanium arc current: 500 A arc Princeton, August 2005 #12;2 Outline · Plasma devices with E×B drift ­ PIII with magnetic control (breakdown vs expansion) Keidar et al. Appl. Phys. Lett, 2002 #12;5 Magnetrons Stable plasma configurations

  8. Organic electronic devices with multiple solution-processed layers

    DOE Patents [OSTI]

    Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

    2015-08-04

    A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.

  9. dc-plasma-sprayed electronic-tube device

    DOE Patents [OSTI]

    Meek, T.T.

    1982-01-29

    An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  10. Electronic Durability of Flexible Transparent Films from Type-Specific Single-Wall Carbon Nanotubes

    SciTech Connect (OSTI)

    Harris, J; Iyer, S; Bernhardt, A; Huh, JY; Hudson, S; Fagan, J; Hobbie, E.

    2011-12-11

    The coupling between mechanical flexibility and electronic performance is evaluated for thin films of metallic and semiconducting single-wall carbon nanotubes (SWCNTs) deposited on compliant supports. Percolated networks of type-purified SWCNTs are assembled as thin conducting coatings on elastic polymer substrates, and the sheet resistance is measured as a function of compression and cyclic strain through impedance spectroscopy. The wrinkling topography, microstructure and transparency of the films are independently characterized using optical microscopy, electron microscopy, and optical absorption spectroscopy. Thin films made from metallic SWCNTs show better durability as flexible transparent conductive coatings, which we attribute to a combination of superior mechanical performance and higher interfacial conductivity.

  11. Electronic Educational Devices EED | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:of theClimate Finance ReadinessNo4Educational Devices EED

  12. Influence of curvature on the device physics of thin film transistors on flexible substrates

    SciTech Connect (OSTI)

    Amalraj, Rex; Sambandan, Sanjiv

    2014-10-28

    Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature.

  13. Electronics 2014, 3, 624-635; doi:10.3390/electronics3040624 electronics

    E-Print Network [OSTI]

    Chen, Ray

    Article Towards Realizing High-Throughput, Roll-to-Roll Manufacturing of Flexible Electronic Systems2R) tracker systems are utilized for large volume flexible electronic device manufacturing/min. Keywords: roll-to-roll; ink-jet printing; flexible electronics; alignment OPEN ACCESS #12;Electronics 2014

  14. Photon-Electron Harvesting in Thin-Film Flexible Solar Cells

    E-Print Network [OSTI]

    Wu, Shin-Tson

    ) Dr. Debashis Chanda's Group Cost effective and high efficiency solar cells are important in orderPhoton-Electron Harvesting in Thin-Film Flexible Solar Cells Javaneh Boroumand (12:00 PM ­ 12:30 PM-crystalline silicon (c- Si) remained number one material of choice for harnessing solar energy due to natural

  15. Electronic firing systems and methods for firing a device

    DOE Patents [OSTI]

    Frickey, Steven J. (Boise, ID); Svoboda, John M. (Idaho Falls, ID)

    2012-04-24

    An electronic firing system comprising a control system, a charging system, an electrical energy storage device, a shock tube firing circuit, a shock tube connector, a blasting cap firing circuit, and a blasting cap connector. The control system controls the charging system, which charges the electrical energy storage device. The control system also controls the shock tube firing circuit and the blasting cap firing circuit. When desired, the control system signals the shock tube firing circuit or blasting cap firing circuit to electrically connect the electrical energy storage device to the shock tube connector or the blasting cap connector respectively.

  16. Semiconductor nanowires for future electronics : growth, characterization, device fabrication, and integration

    E-Print Network [OSTI]

    Dayeh, Shadi A.

    2008-01-01

    en-Sciences, Physics and Electronics, Lebanese University,Devices for Novel Electronics”, Material Research SocietyNanowires for Future Electronics: Growth, Characterization,

  17. Analysis of operations and cyber security policies for a system of cooperating Flexible Alternating Current Transmission System (FACTS) devices.

    SciTech Connect (OSTI)

    Phillips, Laurence R.; Tejani, Bankim; Margulies, Jonathan; Hills, Jason L.; Richardson, Bryan T.; Baca, Micheal J.; Weiland, Laura

    2005-12-01

    Flexible Alternating Current Transmission Systems (FACTS) devices are installed on electric power transmission lines to stabilize and regulate power flow. Power lines protected by FACTS devices can increase power flow and better respond to contingencies. The University of Missouri Rolla (UMR) is currently working on a multi-year project to examine the potential use of multiple FACTS devices distributed over a large power system region in a cooperative arrangement in which the FACTS devices work together to optimize and stabilize the regional power system. The report describes operational and security challenges that need to be addressed to employ FACTS devices in this way and recommends references, processes, technologies, and policies to address these challenges.

  18. Development Engineer (m/w) Innovation Opto-electronic Devices

    E-Print Network [OSTI]

    Giger, Christine

    . nanograde's current materials pipeline includes materials for displays, lighting panels and solar cellsDevelopment Engineer (m/w) Innovation Opto-electronic Devices nanograde, with of ces in CH material problems in high-margin applications for mobile, display, lighting and energy applications

  19. Internship (6+ months) Innovation Opto-electronic Devices

    E-Print Network [OSTI]

    Giger, Christine

    . nanograde's current materials pipeline includes materials for displays, lighting panels and solar cellsInternship (6+ months) Innovation Opto-electronic Devices nanograde, with of ces in CH material problems in high-margin applications for mobile, display, lighting and energy applications

  20. Single Glucose Biofuel Cells Implanted in Rats Power Electronic Devices

    E-Print Network [OSTI]

    Boyer, Edmond

    Single Glucose Biofuel Cells Implanted in Rats Power Electronic Devices A. Zebda1,2 , S. Cosnier1 the first implanted glucose biofuel cell (GBFC) that is capable of generating sufficient power from a mammal further developments. Following recent developments in nano- and biotechnology, state-of-the-art biofuel

  1. Electrodes mitigating effects of defects in organic electronic devices

    DOE Patents [OSTI]

    Heller, Christian Maria Anton (Albany, NY)

    2008-05-06

    A compound electrode for organic electronic devices comprises a thin first layer of a first electrically conducting material and a second electrically conducting material disposed on the first layer. In one embodiment, the second electrically conducting material is formed into a plurality of elongated members. In another embodiment, the second material is formed into a second layer. The elongated members or the second layer has a thickness greater than that of the first layer. The second layer is separated from the first layer by a conducting material having conductivity less than at least the material of the first layer. The compound electrode is capable of mitigating adverse effects of defects, such as short circuits, in the construction of the organic electronic devices, and can be included in light-emitting or photovoltaic devices.

  2. Evaluation of Miscellaneous and Electronic Device Energy Use in Hospitals

    SciTech Connect (OSTI)

    Black, Douglas R.; Lanzisera, Steven M.; Lai, Judy; Brown, Richard E.; Singer, Brett C.

    2012-09-01

    Miscellaneous and electronic loads (MELs) consume about one-thirdof the primary energy used in US buildings, and their energy use is increasing faster than other end-uses. In healthcare facilities, 30percent of the annual electricity was used by MELs in 2008. This paper presents methods and challenges for estimating medical MELs energy consumption along with estimates of energy use in a hospital by combining device-level metered data with inventories and usage information. An important finding is that common, small devices consume large amounts of energy in aggregate and should not be ignored when trying to address hospital energy use.

  3. Design, automation, and test for low-power and reliable flexible electronics

    E-Print Network [OSTI]

    Huang, TC; Huang, JL; Cheng, KT

    2015-01-01

    improvement. Flexible Photovoltaics Solar cells and solarand organic solar Flexible Photovoltaics Figure 7.9: Theof a CIGS solar cell Flexible Photovoltaics (Mo) is selected

  4. Metallization of bacterial cellulose for electrical and electronic device manufacture

    DOE Patents [OSTI]

    Evans, Barbara R.; O'Neill, Hugh M.; Jansen, Valerie Malyvanh; Woodward, Jonathan

    2006-01-17

    The employment of metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The fuel cell includes an electrolyte membrane comprising a membrane support structure comprising bacterial cellulose, an anode disposed on one side of the electrolyte membrane, and a cathode disposed on an opposite side of the electrolyte membrane. At least one of the anode and the cathode comprises an electrode support structure comprising bacterial cellulose, and a catalyst disposed in or on the electrode support structure.

  5. J. Phys. Chem. 1994, 98, 10539-10549 10539 Excited-State Conformational Dynamics of Flexibly and Semirigidly Bridged Electron

    E-Print Network [OSTI]

    van Stokkum, Ivo

    J. Phys. Chem. 1994, 98, 10539-10549 10539 Excited-State Conformational Dynamics of Flexibly and Semirigidly Bridged Electron Donor- Acceptor Systems in Solution. Influence of Temperature and Solvent was either a flexible trimethylene chain or a semirigid piperidine ring. Photoexcitation of the semirigidly

  6. Integration of single-crystal devices with flexible substrates using conductive adhesive layers

    E-Print Network [OSTI]

    Doran, Christopher Kyle Gregory

    2011-01-01

    attractive for solar photovoltaics for novel applicationsFlexibility in solar photovoltaics today is typicallyphotovoltaics. Such technology has already been commercialized as thin-film and dye-sensitized solar

  7. A superconducting-nanowire 3-terminal electronic device

    E-Print Network [OSTI]

    Adam N. McCaughan; Karl K. Berggren

    2014-03-25

    In existing superconducting electronic systems, Josephson junctions play a central role in processing and transmitting small-amplitude electrical signals. However, Josephson-junction-based devices have a number of limitations including: (1) sensitivity to magnetic fields, (2) limited gain, (3) inability to drive large impedances, and (4) difficulty in controlling the junction critical current (which depends sensitively on sub-Angstrom-scale thickness variation of the tunneling barrier). Here we present a nanowire-based superconducting electronic device, which we call the nanocryotron (nTron), that does not rely on Josephson junctions and can be patterned from a single thin film of superconducting material with conventional electron-beam lithography. The nTron is a 3-terminal, T-shaped planar device with a gain of ~20 that is capable of driving impedances of more than 100 k{\\Omega}, and operates in typical ambient magnetic fields at temperatures of 4.2K. The device uses a localized, Joule-heated hotspot formed in the gate to modulate current flow in a perpendicular superconducting channel. We have characterized the nTron, matched it to a theoretical framework, and applied it both as a digital logic element in a half-adder circuit, and as a digital amplifier for superconducting nanowire single-photon detectors pulses. The nTron has immediate applications in classical and quantum communications, photon sensing and astronomy, and its performance characteristics make it compatible with existing superconducting technologies. Furthermore, because the hotspot effect occurs in all known superconductors, we expect the design to be extensible to other materials, providing a path to digital logic, switching, and amplification in high-temperature superconductors.

  8. Calcium chloride electron injection/extraction layers in organic electronic devices

    SciTech Connect (OSTI)

    Qu, Bo, E-mail: bqu@pku.edu.cn, E-mail: qhgong@pku.edu.cn; Gao, Zhi; Yang, Hongsheng; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang, E-mail: bqu@pku.edu.cn, E-mail: qhgong@pku.edu.cn [State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)

    2014-01-27

    Nontoxic calcium chloride (CaCl{sub 2}) was introduced into organic electronic devices as cathode buffer layer (CBL). The turn-on voltage and maximum luminance of organic light-emitting diode (OLED) with 1.5?nm CaCl{sub 2} was 3.5?V and 21 960?cd/m{sup 2}, respectively. OLED with 1.5?nm CaCl{sub 2} possessed comparable electroluminescent characteristics to that of the commonly used LiF. Moreover, the performance of the organic photovoltaic device with 0.5?nm CaCl{sub 2} was comparable to that of the control device with LiF. Therefore, CaCl{sub 2} has the potential to be used as the CBL for organic electronic devices.

  9. Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices

    SciTech Connect (OSTI)

    Chen Duan [Department of Mathematics, Michigan State University, East Lansing, MI 48824 (United States); Wei Guowei [Department of Mathematics, Michigan State University, East Lansing, MI 48824 (United States); Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824 (United States)], E-mail: wei@math.msu.edu

    2010-06-20

    The miniaturization of nano-scale electronic devices, such as metal oxide semiconductor field effect transistors (MOSFETs), has given rise to a pressing demand in the new theoretical understanding and practical tactic for dealing with quantum mechanical effects in integrated circuits. Modeling and simulation of this class of problems have emerged as an important topic in applied and computational mathematics. This work presents mathematical models and computational algorithms for the simulation of nano-scale MOSFETs. We introduce a unified two-scale energy functional to describe the electrons and the continuum electrostatic potential of the nano-electronic device. This framework enables us to put microscopic and macroscopic descriptions in an equal footing at nano-scale. By optimization of the energy functional, we derive consistently coupled Poisson-Kohn-Sham equations. Additionally, layered structures are crucial to the electrostatic and transport properties of nano-transistors. A material interface model is proposed for more accurate description of the electrostatics governed by the Poisson equation. Finally, a new individual dopant model that utilizes the Dirac delta function is proposed to understand the random doping effect in nano-electronic devices. Two mathematical algorithms, the matched interface and boundary (MIB) method and the Dirichlet-to-Neumann mapping (DNM) technique, are introduced to improve the computational efficiency of nano-device simulations. Electronic structures are computed via subband decomposition and the transport properties, such as the I-V curves and electron density, are evaluated via the non-equilibrium Green's functions (NEGF) formalism. Two distinct device configurations, a double-gate MOSFET and a four-gate MOSFET, are considered in our three-dimensional numerical simulations. For these devices, the current fluctuation and voltage threshold lowering effect induced by the discrete dopant model are explored. Numerical convergence and model well-posedness are also investigated in the present work.

  10. High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

    SciTech Connect (OSTI)

    Shi, Hongying; Deng, Lingling; Chen, Shufen E-mail: wei-huang@njupt.edu.cn; Xu, Ying; Zhao, Xiaofei; Cheng, Fan; Huang, Wei E-mail: wei-huang@njupt.edu.cn; Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816

    2014-04-15

    Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

  11. High-temperature superconducting thin-film-based electronic devices

    SciTech Connect (OSTI)

    Wu, X.D; Finokoglu, A.; Hawley, M.; Jia, Q.; Mitchell, T.; Mueller, F.; Reagor, D.; Tesmer, J.

    1996-09-01

    This the final report of a one-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project involved optimization of processing of Y123 and Tl-2212 thin films deposited on novel substrates for advanced electronic devices. The Y123 films are the basis for development of Josephson Junctions to be utilized in magnetic sensors. Microwave cavities based on the Tl-2212 films are the basis for subsequent applications as communication antennas and transmitters in satellites.

  12. Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices

    SciTech Connect (OSTI)

    Long, Mingsheng; Gong, Youpin; Wei, Xiangfei; Zhu, Chao; Xu, Jianbao; Liu, Ping; Guo, Yufen; Li, Weiwei; Liu, Liwei, E-mail: lwliu2007@sinano.ac.cn [Key Laboratory of Nanodevices and Applications-CAS and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Liu, Guangtong [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-04-14

    We fabricated a vertical structure device, in which graphene is sandwiched between two asymmetric ferromagnetic electrodes. The measurements of electron and spin transport were performed across the combined channels containing the vertical and horizontal components. The presence of electron-electron interaction (EEI) was found not only at low temperatures but also at moderate temperatures up to ?120?K, and EEI dominates over weak localization (WL) with and without applying magnetic fields perpendicular to the sample plane. Moreover, spin valve effect was observed when magnetic filed is swept at the direction parallel to the sample surface. We attribute the EEI and WL surviving at a relatively high temperature to the effective suppress of phonon scattering in the vertical device structure. The findings open a way for studying quantum correlation at relatively high temperature.

  13. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Colvin, Vickie (Springfield, NJ)

    1996-01-01

    An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

  14. Dynamical mean-field theory using Wannier functions: A flexible route to electronic structure calculations of strongly correlated materials

    E-Print Network [OSTI]

    Boyer, Edmond

    Dynamical mean-field theory using Wannier functions: A flexible route to electronic structure materials with different degrees of structural and electronic complexity, SrVO3 and BaVS3, are investigated calculations of strongly correlated materials F. Lechermann,1,2, * A. Georges,1 A. Poteryaev,1 S. Biermann,1 M

  15. Integration of single-crystal devices with flexible substrates using conductive adhesive layers

    E-Print Network [OSTI]

    Doran, Christopher Kyle Gregory

    2011-01-01

    using conductive adhesives. ” Submitted for publication,mobility transistors using adhesive bonding. ” ElectronicSubstrates using Conductive Adhesive Layers by Christopher

  16. Electron cyclotron beam measurement system in the Large Helical Device

    SciTech Connect (OSTI)

    Kamio, S., E-mail: kamio@nifs.ac.jp; Takahashi, H.; Kubo, S.; Shimozuma, T.; Yoshimura, Y.; Igami, H.; Ito, S.; Kobayashi, S.; Mizuno, Y.; Okada, K.; Osakabe, M.; Mutoh, T. [National Institute for Fusion Science, Toki 509-5292 (Japan)

    2014-11-15

    In order to evaluate the electron cyclotron (EC) heating power inside the Large Helical Device vacuum vessel and to investigate the physics of the interaction between the EC beam and the plasma, a direct measurement system for the EC beam transmitted through the plasma column was developed. The system consists of an EC beam target plate, which is made of isotropic graphite and faces against the EC beam through the plasma, and an IR camera for measuring the target plate temperature increase by the transmitted EC beam. This system is applicable to the high magnetic field (up to 2.75 T) and plasma density (up to 0.8 × 10{sup 19} m{sup ?3}). This system successfully evaluated the transmitted EC beam profile and the refraction.

  17. Metallization of bacterial cellulose for electrical and electronic device manufacture

    DOE Patents [OSTI]

    Evans, Barbara R. (Oak Ridge, TN); O'Neill, Hugh M. (Knoxville, TN); Jansen, Valerie Malyvanh (Memphis, TN); Woodward, Jonathan (Knoxville, TN)

    2011-06-07

    A method for the deposition of metals in bacterial cellulose and for the employment of the metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The method for impregnating bacterial cellulose with a metal comprises placing a bacterial cellulose matrix in a solution of a metal salt such that the metal salt is reduced to metallic form and the metal precipitates in or on the matrix. The method for the construction of a fuel cell comprises placing a hydrated bacterial cellulose support structure in a solution of a metal salt such that the metal precipitates in or on the support structure, inserting contact wires into two pieces of the metal impregnated support structure, placing the two pieces of metal impregnated support structure on opposite sides of a layer of hydrated bacterial cellulose, and dehydrating the three layer structure to create a fuel cell.

  18. Metallization of bacterial cellulose for electrical and electronic device manufacture

    DOE Patents [OSTI]

    Evans, Barbara R. (Oak Ridge, TN) [Oak Ridge, TN; O'Neill, Hugh M. (Knoxville, TN) [Knoxville, TN; Jansen, Valerie Malyvanh (Memphis, TN) [Memphis, TN; Woodward, Jonathan (Knoxville, TN) [Knoxville, TN

    2010-09-28

    A method for the deposition of metals in bacterial cellulose and for the employment of the metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The method for impregnating bacterial cellulose with a metal comprises placing a bacterial cellulose matrix in a solution of a metal salt such that the metal salt is reduced to metallic form and the metal precipitates in or on the matrix. The method for the construction of a fuel cell comprises placing a hydrated bacterial cellulose support structure in a solution of a metal salt such that the metal precipitates in or on the support structure, inserting contact wires into two pieces of the metal impregnated support structure, placing the two pieces of metal impregnated support structure on opposite sides of a layer of hydrated bacterial cellulose, and dehydrating the three layer structure to create a fuel cell.

  19. Geometry of nanopore devices fabricated by electron beam lithography: Simulations and experimental comparisons

    E-Print Network [OSTI]

    Nair, Sankar

    Geometry of nanopore devices fabricated by electron beam lithography: Simulations and experimental 2013 Keywords: Nanopore Simulation Electron beam lithography Penelope Nanotechnology Monte Carlo a b be fabricated by electron beam lithography (EBL) with high density (on the order of 10 devices per cm2

  20. Commentary: Driver electronic device use - Put down that cell telephone!

    E-Print Network [OSTI]

    Chakravarthy, B; Lotfipour, S

    2012-01-01

    take a glance at your mobile device to see if that messageand are using their mobile devices when actually moving.of driving when using mobile devices can be catastrophic.

  1. A panoply of insertion devices at SOLEIL for a wide spectral range and flexible polarisation

    SciTech Connect (OSTI)

    Couprie, M. E.; Benabderrahmane, C.; Berteaud, P.; Briquez, F.; Chapuis, L.; Elajjouri, T.; Marteau, F.; Filhol, J. M.; Kitegi, C.; Marcouille, O.; Massal, M.; Valleau, M.; Veteran, J.; Chubar, O.

    2010-06-23

    The SOLEIL storage ring presents a very high fraction of its circumference dedicated to accommodate Insertion Devices (ID). Over the 25 presently planned insertion devices presenting a large variety of systems, 16 have been already installed and commissioned in September 2009. The UV-VUV region is covered with electromagnetic devices, offering tuneable polarisations. An electromagnet/permanent magnet undulator using copper sheets coils for fast switching of the helicity is under construction. 13 APPLE-II type undulators, with period ranging from 80 down to 36 mm, provide photons in the 0.1-10 keV region, some of them featuring tapering or quasi-periodicity. Five U20 in vacuum undulators cover typically the 3-30 keV range whereas an in vacuum wiggler, with compensation of the magnetic forces via adequate springs will cover the 10-50 keV spectral domain. R and D on cryogenic in-vacuum undulator is also under progress. A magnetic chicane using permanent magnet dipoles has also been designed in order to accommodate two canted undulators on the same straight section. A wiggler dedicated to slicing (production of femto second long pulses) is also being designed, its radiation will also serve for an X-ray beamline.

  2. PCB Origami: A Material-Based Design Approach to Computer-Aided Foldable Electronic Devices

    E-Print Network [OSTI]

    Demaine, Erik

    that contain electronic functions. Conductivity, output devices (such as Light Emitting Diodes functions such as light and sound performance. In addition, conductivity, LED (Light Emitting Diodes) output

  3. Integration of suspended carbon nanotube arrays into electronic devices and electromechanical systems

    E-Print Network [OSTI]

    Javey, Ali

    Integration of suspended carbon nanotube arrays into electronic devices and electromechanical, electrical, and electromechanical measurements. For instance, Tombler et al. have used suspended SWNTs

  4. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    DOE Patents [OSTI]

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  5. Flexible In-plane Photonic Devices Based on Transferrable Si Nanomembranes on Polyimide This article has been downloaded from IOPscience. Please scroll down to see the full text article.

    E-Print Network [OSTI]

    Chen, Ray

    Flexible In-plane Photonic Devices Based on Transferrable Si Nanomembranes on Polyimide Film on Transferrable Si Nanomembranes on Polyimide Film Xiaochuan Xu1 , Harish Subbaraman2 , Daniel T. Pham1 , Amir the transfer of in-plane Silicon nanomembrane photonic devices on polyimide flexible film. Employing a slightly

  6. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2014-03-04

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  7. Methods and devices for fabricating and assembling printable semiconductor elements

    SciTech Connect (OSTI)

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2013-05-14

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  8. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Daejeon, KR); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Urbana, IL)

    2011-07-19

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  9. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Savoy, IL); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Urbana, IL)

    2009-11-24

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  10. Scaling law of electron confinement in a zero beta polywell device

    SciTech Connect (OSTI)

    Gummersall, David V.; Carr, Matthew; Cornish, Scott; Kachan, Joe [Department of Plasma Physics, School of Physics A28, University of Sydney, NSW 2006 (Australia)] [Department of Plasma Physics, School of Physics A28, University of Sydney, NSW 2006 (Australia)

    2013-10-15

    Orbital theory simulation was applied to an electron trap that uses a cube shaped magnetic cusp known as a Polywell device. The purpose of this device is to create a virtual cathode in order to achieve nuclear fusion using inertial electrostatic confinement. Analytical expressions of the electron confinement time and average position within the device were obtained in terms of the current in the field coils, the dimensions of the device, and the kinetic energy of the electrons. Comparisons with numerical simulations showed good agreement over a parameter range that spanned several orders of magnitude for the current. In addition, power loss from electrons exiting the trap was estimated in order to obtain minimum power requirement to maintain a virtual cathode within the device.

  11. 2/21/2014 Micro-windmills Power Portable Devices | Power content from Electronic Design http://electronicdesign.com/power/micro-windmills-power-portable-devices 1/4

    E-Print Network [OSTI]

    Chiao, Jung-Chih

    2/21/2014 Micro-windmills Power Portable Devices | Power content from Electronic Design http://electronicdesign.com/power/micro-windmills-power-portable-devices 1/4 Feb. 20, 2014 EMAIL Tweet COMMENTS 0 Related Articles Micro-windmills Power Portable Devices windmills that can be used to power portable electronics. Giant windmills now command the landscape and even

  12. Electronic and Photonic Nanoscale Devices July-November 2015

    E-Print Network [OSTI]

    Das, Bijoy Krishna

    Structures: Concept of photonic crystal; bandgap and band structures in 1D, 2D and 3D photonic crystal atoms and periodic table; quantum wells, wires and dots. (iv) Electron Transport in Semiconductors of electrons in nanostructures; electron transport in nanostructures; graphene and carbon nanotubes. (v

  13. Georgia Tech Manufacturing Institute | Printed and Flexible Electronics | Page 1 A G E N D A S P E A K E R B I O G R A P H I E S

    E-Print Network [OSTI]

    Das, Suman

    Georgia Tech Manufacturing Institute | Printed and Flexible Electronics | Page 1 A G E N D A · S P Next Generation Manufacturing of Printed and Flexible Electronics #12;#12;Georgia Tech Manufacturing Institute | Printed and Flexible Electronics | Page 1 Table of Contents Agenda - Pages 3-4 Speaker

  14. A versatile three-contact electrical biasing transmission electron microscope specimen holder for electron holography and electron tomography of working devices

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    A versatile three-contact electrical biasing transmission electron microscope specimen holder to characterize nanoscale materials and devices under operating conditions in the transmission electron microscope in the transmission electron microscope (TEM) at a spatial resolution that can approach the nanometer scale

  15. Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

    E-Print Network [OSTI]

    Walsworth, Ronald L.

    mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic and circuits based on this 2D heterostructure pave the way for practical flexible transparent electronics, flexible and transparent As Moore's law approaches its physical limit in Si-based electronics, the device

  16. 852 J. Phys. Chem. 1994, 98, 852-866 ConformationalDynamics of Flexibly and Semirigidly Bridged Electron Donor-Acceptor Systems

    E-Print Network [OSTI]

    van Stokkum, Ivo

    852 J. Phys. Chem. 1994, 98, 852-866 ConformationalDynamics of Flexibly and Semirigidly Bridged Electron Donor-Acceptor Systems As Revealed by Spectrotemporal Parameterization of Fluorescence I. H.M. van: a flexible trimethylene chain and a semirigid piperidine ring. In moderately polar solvents (6 > 3.5) only

  17. Silk-based resorbable electronic devices for remotely controlled therapy and in vivo infection abatement

    E-Print Network [OSTI]

    Rogers, John A.

    Silk-based resorbable electronic devices for remotely controlled therapy and in vivo infection and integrate in the biological milieu, and technology, through the use of recently developed material platforms the necessary thermal therapy or trigger drug delivery. Such externally control- lable, resorbable devices

  18. Two-Phase Cooling Method Using R134a Refrigerant to Cool Power Electronic Devices

    E-Print Network [OSTI]

    Tolbert, Leon M.

    Two-Phase Cooling Method Using R134a Refrigerant to Cool Power Electronic Devices Jeremy B, TN 37932 Abstract This paper presents a two-phase cooling method using R134a refrigerant). The cooling method involves submerging PE devices in an R134a bath, which limits the junction temperature

  19. Handbook for dose enhancement effects in electronic devices. Final technical report Jun-Sep 81

    SciTech Connect (OSTI)

    Long, D.M.; Millward, D.G.; Fitzwilson, R.L.; Chadsey, W.L.

    1983-03-01

    The handbook provides tabulation of dose enhancement factors for electronic devices in X-ray and gamma environments. The data are applicable to a wide range of semiconductor devices and selected types of capacitors. The radiation environment includes energy spectra for system design and for radiation test facilities.

  20. Growth, Characterization, Modeling and Device Applications of Semiconductor Nanowire Networks

    E-Print Network [OSTI]

    Lohn, Andrew John

    2012-01-01

    or nanowire arrays. Flexible electronics and optoelectronicsof poor purity. Flexible electronics and optoelectronics

  1. Wireless Electricity Metering of Miscellaneous and Electronic Devices in Buildings

    E-Print Network [OSTI]

    California at Berkeley, University of

    use of these devices to ensure energy efficiency activities are targeted at products to estimate end-use energy consumption. In these models, MELs -use, which, and their energy use is projected to increase four times more over the next decade as all

  2. IEEE ELECTRON DEVICE LETTERS, VOL. 27, NO. 6, JUNE 2006 489 Modeling of Charge Trapping Induced

    E-Print Network [OSTI]

    Dutton, Robert W.

    IEEE ELECTRON DEVICE LETTERS, VOL. 27, NO. 6, JUNE 2006 489 Modeling of Charge Trapping Induced a distributed tunneling model to investigate the threshold-voltage instability induced by charge trapping bias varies [1], and the latter effect has been attributed to the distributed bulk electron traps [2

  3. An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

    SciTech Connect (OSTI)

    Litzenberger, Wayne; Lava, Val

    1994-08-01

    References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

  4. Electronic & Magnetic Materials & Devices | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansas Nuclear ProfileMultiferroicAwardElectronElectronic & Magnetic

  5. Design, automation, and test for low-power and reliable flexible electronics

    E-Print Network [OSTI]

    Huang, TC; Huang, JL; Cheng, KT

    2015-01-01

    additive" process, which is different from the "subtracting" process used in silicon electronics manufacturing.

  6. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    SciTech Connect (OSTI)

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  7. Device fabrication: Three-dimensional printed electronics (Journal Article)

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing BacteriaConnectlaser-solidSwitchgrass| SciTech Connect Device fabrication:

  8. Electronic & Magnetic Materials & Devices Capabilities | Argonne National

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansas Nuclear ProfileMultiferroicAwardElectron

  9. A time-dependent momentum-space density functional theoretical approach for electron transport dynamics in molecular devices

    E-Print Network [OSTI]

    Chu, Shih-I

    and structures PACS 85.65.+h ­ Molecular electronic devices PACS 71.15.Pd ­ Molecular dynamics calculations (Carr for electron transport dynamics in molecular devices Zhongyuan Zhou(a) and Shih-I Chu Department of Chemistry. The electron wave function is calculated by solving this equation in a finite P-space volume. This approach

  10. Electronics Delivered To The Brain By Injection -June 09, 2015 Asian Scientist Magazine | Science, Technology and Medicine News Updates From Asia -http://www.asianscientist.com

    E-Print Network [OSTI]

    Xie, Xiaoliang Sunney

    ultra- flexible mesh electronics which can be directly injected into the brains of mice. Once there that they could be used as minimally invasive detection or stimulation devices. Developing flexible electronics than traditional flexible electronics--could be applied to living tissue and other soft materials

  11. Using Wireless Power Meters to Measure Energy Use of Miscellaneous and Electronic Devices in Buildings

    SciTech Connect (OSTI)

    UC Berkeley, Berkeley, CA USA; Brown, Richard; Lanzisera, Steven; Cheung, Hoi Ying; Lai, Judy; Jiang, Xiaofan; Dawson-Haggerty, Stephen; Taneja, Jay; Ortiz, Jorge; Culler, David

    2011-05-24

    Miscellaneous and electronic devices consume about one-third of the primary energy used in U.S. buildings, and their energy use is increasing faster than other end-uses. Despite the success of policies, such as Energy Star, that promote more efficient miscellaneous and electronic products, much remains to be done to address the energy use of these devices if we are to achieve our energy and carbon reduction goals. Developing efficiency strategies for these products depends on better data about their actual usage, but very few studies have collected field data on the long-term energy used by a large sample of devices due to the difficulty and expense of collecting device-level energy data. This paper describes the development of an improved method for collecting device-level energy and power data using small, relatively inexpensive wireless power meters. These meters form a mesh network based on Internet standard protocols and can form networks of hundreds of metering points in a single building. Because the meters are relatively inexpensive and do not require manual data downloading, they can be left in the field for months or years to collect long time-series energy use data. In addition to the metering technology, we also describe a field protocol used to collect comprehensive, robust data on the miscellaneous and electronic devices in a building. The paper presents sample results from several case study buildings, in which all the plug-in devices for several homes were metered, and a representative sample of several hundred plug-in devices in a commercial office building were metered for several months.

  12. IEEE ELECTRON DEVICE LETTERS, VOL. 20, NO. 2, FEBRUARY 1999 97 Effects of Longitudinal Grain Boundaries

    E-Print Network [OSTI]

    IEEE ELECTRON DEVICE LETTERS, VOL. 20, NO. 2, FEBRUARY 1999 97 Effects of Longitudinal Grain grains in a direction longitudinal to that of the current flow, whereas in SPC-TFT's, the grain by a competitive earmarked research grant from the Research Grants Council of Hong Kong and a grant from the Hong

  13. Synchrophasor Measurement Using Substation Intelligent Electronic Devices: Algorithms and Test Methodology 

    E-Print Network [OSTI]

    Ren, Jinfeng

    2012-02-14

    Digital Fault Recorder DFT Digital Fourier Transform DPR Digital Protective Relaying GPS Global Positioning System IED Intelligent Electronic Device IRIG-B Inter Range Instrumentation Group Time Code Format B NIST National... ................................................................ 31 ix Page 2.4.1 Real-time Operations ...................................................................... 33 2.4.2 Off-line Applications ...................................................................... 39 2.4.3 Wide-area Controls...

  14. From classical pumps of water to quantum pumping of electrons in closed devices

    E-Print Network [OSTI]

    Cohen, Doron

    From classical pumps of water to quantum pumping of electrons in closed devices Doron Cohen, Ben to pumping DC, Kottos, Schanz (cond-mat 2004) - pumping on networks Sela, DC (in preperation) - pumping reservoirs) · one of the above interacting with a bath Questions: Transport? Dissipation? #12;Simple pumping

  15. Flexible pulse delay control up to picosecond for high-intensity twin electron bunches

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Zhen; Ding, Yuantao; Emma, Paul; Huang, Zhirong; Marinelli, Agostino; Tang, Chuanxiang

    2015-09-10

    Two closely spaced electron bunches have attracted strong interest due to their applications in two color X-ray free-electron lasers as well as witness bunch acceleration in plasmas and dielectric structures. In this paper, we propose a new scheme of delay system to vary the time delay up to several picoseconds while not affecting the bunch compression. Numerical simulations based on the Linac Coherent Light Source are performed to demonstrate the feasibility of this method.

  16. SOLUTION-PROCESSED INORGANIC ELECTRONICS

    E-Print Network [OSTI]

    Bakhishev, Teymur

    2011-01-01

    Conductors for Flexible Electronics,” Journal of Thefor low-cost and flexible electronics. Parts of his workwidespread use in flexible electronics. From an economic

  17. Electron heat transport comparison in the Large Helical Device and TJ-II

    SciTech Connect (OSTI)

    Garcia, J.; Dies, J.; Castejon, F.; Yamazaki, K. [Fusion Energy Engineering Laboratory (FEEL), Departament de Fisica i Enginyeria Nuclear, ETSEIB, Universitat Politecnica de Catalunya (UPC), Barcelona (Spain); Laboratorio Nacional de Fusion, Asociacion EURATOM-CIEMAT, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas, Madrid (Spain); Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan)

    2007-10-15

    The electron heat transport in the Large Helical Device (LHD) [K. Ida, T. Shimozuma, H. Funaba et al., Phys. Rev. Lett. 91, 085003 (2003)] and TJ-II [F. Castejon, V. Tribaldos, I. Garcia-Cortes, E. de la Luna, J. Herranz, I. Pastor, T. Estrada, and TJ-II Team, Nucl. Fusion 42, 271 (2002)] is analyzed by means of the TOTAL [K. Yamazaki and T. Amano, Nucl. Fusion 32, 4 (1992)] and PRETOR-Stellarator [J. Dies, F. Castejon, J. M. Fontdecaba, J. Fontanet, J. Izquierdo, G. Cortes, and C. Alejaldre, Proceedings of the 29th European Physical Society Conference on Plasma Physics and Controlled Fusion, Montreux, 2002, Europhysics Conference Abstracts, 2004, Vol. 26B, P-5.027] plasma simulation codes and assuming a global transport model mixing GyroBohm-like drift wave model and other drift wave model with shorter wavelength. The stabilization of the GyroBohm-like model by the ExB shear has been also taken into account. Results show how such kind of electron heat transport can simulate experimental evidence in both devices, leading to the electron internal transport barrier (eITB) formation in the LHD and to the so-called 'enhanced heat confinement regimes' in TJ-II when electron density is low enough. Therefore, two sources for the anomalous electron heat transport can coexist in plasmas with eITB; however, for each device the relative importance of anomalous and neoclassical transport can be different.

  18. Device and method for electron beam heating of a high density plasma

    DOE Patents [OSTI]

    Thode, Lester E. (Los Alamos, NM)

    1981-01-01

    A device and method for relativistic electron beam heating of a high density plasma in a small localized region. A relativistic electron beam generator produces a high voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10.sup.17 to 10.sup.20 electrons per cubic centimeter. The target plasma is ionized prior to application of the electron beam by means of a laser or other preionization source. Utilizing a relativistic electron beam with an individual particle energy exceeding 3 MeV, classical scattering by relativistic electrons passing through isolation foils is negligible. As a result, relativistic streaming instabilities are initiated within the high density target plasma causing the relativistic electron beam to efficiently deposit its energy into a small localized region within the high density plasma target.

  19. Cotunneling in single-electron devices: Effects of stray capacitances G. Y. Hu and R. F. O'Connell

    E-Print Network [OSTI]

    O'Connell, Robert F.

    for cotunneling in one-dimensional arrays, single-electron traps, and single-electron turnstiles. Our results show. In these single-electron devices, small tunnel junctions have been used as switches that control the charge flow such as space correlation. The most common case of single-charge tunneling is that of a single-electron

  20. Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics

    E-Print Network [OSTI]

    Chung, Choong-Heui

    2012-01-01

    and for emerging flexible electronics. Calculations predictto flexible solar cells, displays, and other electronics

  1. Doping stability and opto-electronic performance of CVD graphene on transparent flexible substrates

    E-Print Network [OSTI]

    Kang, Moon Hyo; Milne, William I.; Cole, Matthew T.

    2014-07-15

    two laminates (1) and passed through a dual roller laminator, heated to 120 ?C (2). Kang et al. IET: Graphene Electronics Special Issue - - 7 Following thermal lamination, the backside laminate was detached (3) and the Cu etched in (NH4)2S2O8... transfer approach. The UV-curable adhesive was first coated onto acetone cleaned PET (1). The as- grown graphene on Cu was then placed on the adhesive and pressed at around 0.2 MPa, ensuring that all air is removed from the graphene-adhesive interface (2...

  2. Electronic unit integrated into a flexible polymer body (Patent) | SciTech

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing(Journal Article) | SciTech(Journal Article)at the Linaclong-rangeConnect Electronic

  3. Electronic, Vibrational and Thermoelectric Properties of Two-Dimensional Materials

    E-Print Network [OSTI]

    Wickramaratne, Darshana

    2015-01-01

    for flexible and transparent electronics,” Natureof applying LMCs for flexible electronics. [35] This was

  4. A versatile LabVIEW and field-programmable gate array-based scanning probe microscope for in operando electronic device characterization

    SciTech Connect (OSTI)

    Berger, Andrew J. Page, Michael R.; Young, Justin R.; Bhallamudi, Vidya P.; Johnston-Halperin, Ezekiel; Pelekhov, Denis V.; Hammel, P. Chris; Jacob, Jan; Lewis, Jim; Wenzel, Lothar

    2014-12-15

    Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In operando characterization of such devices by scanning probe techniques is particularly well-suited for the microscopic study of these properties. We have developed a scanning probe microscope (SPM) which is capable of both standard force imaging (atomic, magnetic, electrostatic) and simultaneous electrical transport measurements. We utilize flexible and inexpensive FPGA (field-programmable gate array) hardware and a custom software framework developed in National Instrument's LabVIEW environment to perform the various aspects of microscope operation and device measurement. The FPGA-based approach enables sensitive, real-time cantilever frequency-shift detection. Using this system, we demonstrate electrostatic force microscopy of an electrically biased graphene field-effect transistor device. The combination of SPM and electrical transport also enables imaging of the transport response to a localized perturbation provided by the scanned cantilever tip. Facilitated by the broad presence of LabVIEW in the experimental sciences and the openness of our software solution, our system permits a wide variety of combined scanning and transport measurements by providing standardized interfaces and flexible access to all aspects of a measurement (input and output signals, and processed data). Our system also enables precise control of timing (synchronization of scanning and transport operations) and implementation of sophisticated feedback protocols, and thus should be broadly interesting and useful to practitioners in the field.

  5. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOE Patents [OSTI]

    Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2015-09-08

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  6. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    SciTech Connect (OSTI)

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  7. IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 5, MAY 2001 233 Interface Traps at High Doping Drain Extension

    E-Print Network [OSTI]

    Fu, Li Ming

    to induce the thermal-trap-tunneling process of electron transition from the conduction band to the valence the conduction band, and the arrow NT indicates the net process of electron tunneling from traps to the valenceIEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 5, MAY 2001 233 Interface Traps at High Doping Drain

  8. Microfluidic Brain Slice Chambers and Flexible Microelectrode Arrays for in vitro Localized Stimulation and Spatial Mapping of Neural Activities

    E-Print Network [OSTI]

    Tang, Yujie

    2012-01-01

    in biocompatible flexible electronics. To record corticalthat is suitable for flexible electronics interconnects(KimThe marriage of flexible electronics and 3D low impedance

  9. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test themore »quality of the HfO2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO2 thin film functioned very well as the gate oxide.« less

  10. Plasma response to electron energy filter in large volume plasma device

    SciTech Connect (OSTI)

    Sanyasi, A. K.; Awasthi, L. M.; Mattoo, S. K.; Srivastava, P. K.; Singh, S. K.; Singh, R.; Kaw, P. K. [Institute for Plasma Research, Gandhinagar, 382 428 Gujarat (India)] [Institute for Plasma Research, Gandhinagar, 382 428 Gujarat (India)

    2013-12-15

    An electron energy filter (EEF) is embedded in the Large Volume Plasma Device plasma for carrying out studies on excitation of plasma turbulence by a gradient in electron temperature (ETG) described in the paper of Mattoo et al. [S. K. Mattoo et al., Phys. Rev. Lett. 108, 255007 (2012)]. In this paper, we report results on the response of the plasma to the EEF. It is shown that inhomogeneity in the magnetic field of the EEF switches on several physical phenomena resulting in plasma regions with different characteristics, including a plasma region free from energetic electrons, suitable for the study of ETG turbulence. Specifically, we report that localized structures of plasma density, potential, electron temperature, and plasma turbulence are excited in the EEF plasma. It is shown that structures of electron temperature and potential are created due to energy dependence of the electron transport in the filter region. On the other hand, although structure of plasma density has origin in the particle transport but two distinct steps of the density structure emerge from dominance of collisionality in the source-EEF region and of the Bohm diffusion in the EEF-target region. It is argued and experimental evidence is provided for existence of drift like flute Rayleigh-Taylor in the EEF plasma.

  11. Printable, flexible and stretchable diamond for thermal management

    DOE Patents [OSTI]

    Rogers, John A; Kim, Tae Ho; Choi, Won Mook; Kim, Dae Hyeong; Meitl, Matthew; Menard, Etienne; Carlisle, John

    2013-06-25

    Various heat-sinked components and methods of making heat-sinked components are disclosed where diamond in thermal contact with one or more heat-generating components are capable of dissipating heat, thereby providing thermally-regulated components. Thermally conductive diamond is provided in patterns capable of providing efficient and maximum heat transfer away from components that may be susceptible to damage by elevated temperatures. The devices and methods are used to cool flexible electronics, integrated circuits and other complex electronics that tend to generate significant heat. Also provided are methods of making printable diamond patterns that can be used in a range of devices and device components.

  12. Gummi is an interaction technique and device concept based on physical deformation of a handheld device. The device

    E-Print Network [OSTI]

    Poupyrev, Ivan

    of flexible electronic components: a flexible organic, light-emitting display (OLED) on top, flexible been demonstrated, such as flexible transistors and full color, high-resolution flexible OLEDs

  13. Performance of large electron energy filter in large volume plasma device

    SciTech Connect (OSTI)

    Singh, S. K.; Srivastava, P. K.; Awasthi, L. M.; Mattoo, S. K.; Sanyasi, A. K.; Kaw, P. K. [Institute for Plasma Research, Gandhinagar 382 428, Gujarat (India)] [Institute for Plasma Research, Gandhinagar 382 428, Gujarat (India); Singh, R. [Institute for Plasma Research, Gandhinagar 382 428, Gujarat (India) [Institute for Plasma Research, Gandhinagar 382 428, Gujarat (India); WCI Center for Fusion Theory, National Fusion Research Institute Gwahangno 113, Yu-seong-gu, Daejeon, 305-333 (Korea, Republic of)

    2014-03-15

    This paper describes an in-house designed large Electron Energy Filter (EEF) utilized in the Large Volume Plasma Device (LVPD) [S. K. Mattoo, V. P. Anita, L. M. Awasthi, and G. Ravi, Rev. Sci. Instrum. 72, 3864 (2001)] to secure objectives of (a) removing the presence of remnant primary ionizing energetic electrons and the non-thermal electrons, (b) introducing a radial gradient in plasma electron temperature without greatly affecting the radial profile of plasma density, and (c) providing a control on the scale length of gradient in electron temperature. A set of 19 independent coils of EEF make a variable aspect ratio, rectangular solenoid producing a magnetic field (B{sub x}) of 100?G along its axis and transverse to the ambient axial field (B{sub z} ? 6.2?G) of LVPD, when all its coils are used. Outside the EEF, magnetic field reduces rapidly to 1?G at a distance of 20 cm from the center of the solenoid on either side of target and source plasma. The EEF divides LVPD plasma into three distinct regions of source, EEF and target plasma. We report that the target plasma (n{sub e} ? 2 × 10{sup 11}?cm{sup ?3} and T{sub e} ? 2?eV) has no detectable energetic electrons and the radial gradients in its electron temperature can be established with scale length between 50?and?600 cm by controlling EEF magnetic field. Our observations reveal that the role of the EEF magnetic field is manifested by the energy dependence of transverse electron transport and enhanced transport caused by the plasma turbulence in the EEF plasma.

  14. Electron cyclotron heating at down-shifted frequencies in existing tokamak devices

    SciTech Connect (OSTI)

    Mazzucato, E.; Fidone, I.; Giruzzi, G.; Krivenski, V.

    1985-06-01

    Plasma heating in existing tokamak devices by electron cyclotron waves with frequency (f) significantly smaller than the electron gyrofrequency (f/sub c/) is investigated for the case of Maxwellian plasmas. It is shown that for central electron temperatures larger than 3 keV, strong absorption of extraordinary waves can occur at values of toroidal field for which the condition f = f/sub c/ is not satisfied in the plasma region. The cases of f = 60 GHz and f = 100 GHz are discussed for the PLT and TFTR devices as representative of medium (approx. =30 kG) and high (approx. =50 kG) magnetic field tokamaks, respectively. Numerical calculations with a ray tracing code indicate that most of the rf energy is absorbed in a central plasma region. These results are of practical interest because they significantly simplify the main technical problem of ECH in a tokamak reactor, i.e., the development of high frequency and high power microwave sources.

  15. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    DOE Patents [OSTI]

    Simpson, Lin Jay

    2015-07-28

    Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

  16. Local intelligent electronic device (IED) rendering templates over limited bandwidth communication link to manage remote IED

    DOE Patents [OSTI]

    Bradetich, Ryan; Dearien, Jason A; Grussling, Barry Jakob; Remaley, Gavin

    2013-11-05

    The present disclosure provides systems and methods for remote device management. According to various embodiments, a local intelligent electronic device (IED) may be in communication with a remote IED via a limited bandwidth communication link, such as a serial link. The limited bandwidth communication link may not support traditional remote management interfaces. According to one embodiment, a local IED may present an operator with a management interface for a remote IED by rendering locally stored templates. The local IED may render the locally stored templates using sparse data obtained from the remote IED. According to various embodiments, the management interface may be a web client interface and/or an HTML interface. The bandwidth required to present a remote management interface may be significantly reduced by rendering locally stored templates rather than requesting an entire management interface from the remote IED. According to various embodiments, an IED may comprise an encryption transceiver.

  17. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 41, NO. 12, DECEMBER 1994 2391 Influence of Lattice Self-Heating and

    E-Print Network [OSTI]

    Florida, University of

    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 41, NO. 12, DECEMBER 1994 2391 Influence of Lattice Member, IEEE Abstract-As device technologiesimprove, the traditional drift- diffusion transport model Engineering, University of Florida, Gainesville, FL 32603 USA. IEEE Log Number 9405891. ical dimension is more

  18. Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

    DOE Patents [OSTI]

    Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

    1988-06-16

    An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

  19. 468 IEEE ELECTRON DEVICE LETTERS, VOL. EDL-7, NO. 8, AUGUST 1986 Low-Energy Ion Beam Oxidation of Silicon

    E-Print Network [OSTI]

    Fossum, Eric R.

    468 IEEE ELECTRON DEVICE LETTERS, VOL. EDL-7, NO. 8, AUGUST 1986 Low-Energy Ion Beam Oxidation and neutralized by a thermionic filament whose electron emission is adjusted to yield a net neutral beam of Silicon Abstract-A low-energyoxygen ion beam with energy below 100 eV has been applied to the oxidation

  20. IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 4, APRIL 2011 485 A Distributed Model for Border Traps in

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 4, APRIL 2011 485 A Distributed Model for Border Traps on tunneling between the semiconductor surface and trap states in the gate dielectric film is formulated constants as they interact with the conduction band electrons via tunneling [8]. Moreover, the dispersion

  1. 3190 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, NO. 10, OCTOBER 2013 Methodology for the Study of Dynamic

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    event is characterized by a fast release of trapped charge through a temperature-independent tunneling-resistance, FET, GaN, high electron-mobility transistor (HEMT), transient, trapping. I. INTRODUCTION IN THE last3190 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, NO. 10, OCTOBER 2013 Methodology for the Study

  2. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    DOE Patents [OSTI]

    Simpson, Lin Jay

    2013-12-17

    A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

  3. Carbon Nanotube-based MEMS Energy Storage Devices

    E-Print Network [OSTI]

    Jiang, Yingqi

    2011-01-01

    and P.M. Ajayan, Flexible energy storage devices based onand P.M. Ajayan, Flexible energy storage devices based onP.M. Ajayan, Flexible energy storage devices based on

  4. Electron Transport and Scattering in Graphene Devices Transferred to SrTiO3 Substrates

    E-Print Network [OSTI]

    Sachs, Raymond

    2013-01-01

    graphene device on SiO 2 (left) and STO (right). 5.6 PreparationGraphene Field-Effect Transistor Devices . 67 5.4 Measurement Setup . 68 5.5 Device Transfer Technique .. 70 5.6 Preparation

  5. Cross-conjugated polymers for organic electronic devices and related methods

    SciTech Connect (OSTI)

    2013-10-08

    Cross-conjugated donor-acceptor polymers, methods for their preparation, devices that include polymers, and methods for the preparation and use of the devices.

  6. Roll Printed Electronics: Development and Scaling of Gravure Printing Techniques

    E-Print Network [OSTI]

    de la Fuente Vornbrock, Alejandro

    2009-01-01

    conductors for flexible electronics." s.l. : Journal of thegate insulator for flexible electronics." s.l. : OrganicSymposium on Flexible Electronics and Displays, November 13-

  7. Semiconductor Nanotechnology: Novel Materials and Devices for Electronics, Photonics, and Renewable Energy Applications

    SciTech Connect (OSTI)

    Goodnick, Stephen; Korkin, Anatoli; Krstic, Predrag S; Mascher, Peter; Preston, John; Zaslavsky, Alex

    2010-03-01

    Electronic and photonic information technology and renewable energy alternatives, such as solar energy, fuel cells and batteries, have now reached an advanced stage in their development. Cost-effective improvements to current technological approaches have made great progress, but certain challenges remain. As feature sizes of the latest generations of electronic devices are approaching atomic dimensions, circuit speeds are now being limited by interconnect bottlenecks. This has prompted innovations such as the introduction of new materials into microelectronics manufacturing at an unprecedented rate and alternative technologies to silicon CMOS architectures. Despite the environmental impact of conventional fossil fuel consumption, the low cost of these energy sources has been a long-standing economic barrier to the development of alternative and more efficient renewable energy sources, fuel cells and batteries. In the face of mounting environmental concerns, interest in such alternative energy sources has grown. It is now widely accepted that nanotechnology offers potential solutions for securing future progress in information and energy technologies. The Canadian Semiconductor Technology Conference (CSTC) forum was established 25 years ago in Ottawa as an important symbol of the intrinsic strength of the Canadian semiconductor research and development community, and the Canadian semiconductor industry as a whole. In 2007, the 13th CSTC was held in Montreal, moving for the first time outside the national capital region. The first three meetings in the series of Nano and Giga Challenges in Electronics and Photonics NGCM2002 in Moscow, NGCM2004 in Krakow, and NGC2007 in Phoenix were focused on interdisciplinary research from the fundamentals of materials science to the development of new system architectures. In 2009 NGC2009 and the 14th Canadian Semiconductor Technology Conference (CSTC2009) were held as a joint event, hosted by McMaster University (10 14 August, Hamilton, Ontario, Canada) and the scope was expanded to include renewable energy research and development. This special issue of Nanotechnology is devoted to a better understanding of the function and design of semiconductor devices that are relevant to information technology (both electronics and photonics based) and renewable energy applications. The papers contained in this special issue are selected from the NGC/CSTC2009 symposium. Among them is a report by Ray LaPierre from McMaster University and colleagues at the University of Waterloo in Canada on the ability to manipulate single spins in nanowire quantum bits. The paper also reports the development of a testbed of a few qubits for general quantum information processing tasks [1]. Lower cost and greater energy conversion efficiency compared with thin film devices have led to a high level of activity in nanowire research related to photovoltaic applications. This special issue also contains results from an impedance spectroscopy study of core shell GaAs nanowires to throw light on the transport and recombination mechanisms relevant to solar cell research [2]. Information technology research and renewable energy sources are research areas of enormous public interest. This special issue addresses both theoretical and experimental achievements and provides a stimulating outlook for technological developments in these highly topical fields of research. References [1] Caram J, Sandoval C, Tirado M, Comedi D, Czaban J, Thompson D A and LaPierre R R 2010 Electrical characteristics of core shell p-n GaAs nanowire structures with Te as the n-dopant Nanotechnology 21 134007 [2] Baugh J, Fung J S and LaPierre R R 2010 Building a spin quantum bit register using semiconductor nanowires Nanotechnology 21 134018

  8. Journal of ELECTRONIC MATERIALS, Vol. 33, No. 4, 2004 Regular Issue Paper Transparent Flexible Plastic Substrates for Organic

    E-Print Network [OSTI]

    Kanicki, Jerzy

    light- emitting devices (OLEDs). Specifically, we have evaluated the TCE electrical resistivity, surface Plastic Substrates for Organic Light-Emitting Devices YONGTAEK HONG,1 ZHIQI HE,1,4 NANCY S. LENNHOFF,2. These properties are adequate for OLED applications based on United States Display Consortium specifications

  9. ssentially all semiconductor technology is based on electronic devices, such as

    E-Print Network [OSTI]

    Roukes, Michael L.

    , spintronicsmayalsoleadinthenearfutureto the development of semiconductor devices capable of performing high-speed logic and memory

  10. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 6, JUNE 1998 1361 Degradation of Thin Tunnel Gate Oxide

    E-Print Network [OSTI]

    Schroder, Dieter K.

    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 6, JUNE 1998 1361 Degradation of Thin Tunnel. Schroder, Fellow, IEEE Abstract-- The degradation of thin tunnel gate oxide under constant Fowler charge trapping is usually dominant at low QQQinjinjinj followed by negative charge trapping at high

  11. 846 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 Simulation of Oxide Trapping Noise in

    E-Print Network [OSTI]

    Florida, University of

    846 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 Simulation of Oxide Trapping--Carrier trapping via tunneling into the gate oxide was implemented into a partial differential equation -based are calculated using the carrier tunneling rates between trap centers in the oxide and those at the interface

  12. 2592 IEEE TRANSACTIONS ON MAGNETICS, VOL. 41, NO. 10, OCTOBER 2005 Vertical Spinal Electronic Device With Large

    E-Print Network [OSTI]

    Xu, Yongbing

    , and Y. B. Xu1 Spintronics Laboratory, Department of Electronics, University of York, Heslington, York YO. Index Terms--CPP geometry, magnetoresistance, spintronics. I. INTRODUCTION SPIN injection from of fundamental relevance in spintronics. Consequently, hybrid ferromagnet-semiconductor spintronics devices where

  13. GLOSSARY OF INFORMATION SECURITY THREATS Computer any electronic device used for storing, processing and transmitting data according

    E-Print Network [OSTI]

    Sun, Yi

    a computer virus. Can appear to be a legitimate program or system resource. WormGLOSSARY OF INFORMATION SECURITY THREATS Computer · any electronic device used or damage your computer. Pharming ·(aka Vishing) a hacker's attack aiming to redirect

  14. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 11, NOVEMBER 2014 3883 Adaptive Compact Magnetic Tunnel Junction Model

    E-Print Network [OSTI]

    Friedman, Eby G.

    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 11, NOVEMBER 2014 3883 Adaptive Compact; 2) the voltage controlled magnetic anisotropy (VCMA) effect; and 3) the fusion of STT and VCMA. Several compact models have been published for MTJs. All of these models consider an MTJ whose magnetic

  15. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 7, JULY 2008 1733 Investigation of Thermal Crosstalk Between SOI

    E-Print Network [OSTI]

    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 7, JULY 2008 1733 Investigation of Thermal Crosstalk Between SOI FETs by the Subthreshold Sensing Technique Manu Shamsa, Student Member, IEEE, Paul M. Solomon, Fellow, IEEE, Keith A. Jenkins, Senior Member, IEEE, Alexander A. Balandin, Senior Member, IEEE

  16. IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 4, APRIL 2013 487 GaAs Enhancement-Mode NMOSFETs Enabled by

    E-Print Network [OSTI]

    IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 4, APRIL 2013 487 GaAs Enhancement-Mode NMOSFETs Enabled, and P. D. Ye, Fellow, IEEE Abstract--We demonstrate high-performance enhancement­ mode (E-mode) Ga at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2013.2244058 Fig. 1. (a) Cross

  17. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 10, OCTOBER 2011 3519 A Focused Asymmetric MetalInsulatorMetal

    E-Print Network [OSTI]

    Dagenais, Mario

    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 10, OCTOBER 2011 3519 A Focused Asymmetric Kwangsik Choi, Filiz Yesilkoy, Geunmin Ryu, Member, IEEE, Si Hyung Cho, Neil Goldsman, Mario Dagenais, Fellow, IEEE, and Martin Peckerar, Fellow, IEEE Abstract--Asymmetric thin-film metal­insulator­metal (MIM

  18. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 5, MAY 2004 693 Effect of Stochastic Dead Space on Noise in

    E-Print Network [OSTI]

    Teich, Malvin C.

    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 5, MAY 2004 693 Effect of Stochastic Dead Space on Noise in Avalanche Photodiodes Oh-Hyun Kwon, Majeed M. Hayat, Senior Member, IEEE, Joe C. Campbell, Fellow, IEEE, Bahaa E. A. Saleh, Fellow, IEEE, and Malvin Carl Teich, Fellow, IEEE Abstract--A stochastic

  19. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 3, MARCH 2004 371 Effects of Mechanical Strain on TFTs

    E-Print Network [OSTI]

    Suo, Zhigang

    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 3, MARCH 2004 371 Effects of Mechanical Strain on TFTs on Spherical Domes Pai-hui Iris Hsu, Student Member, IEEE, M. Huang, H. Gleskova, Member, IEEE, Z. Xi, Z. Suo, S. Wagner, Fellow, IEEE, and James C. Sturm, Fellow, IEEE Abstract--In this paper

  20. IEEE ELECTRON DEVICE LETTERS, VOL. 12, NO. 8, AUGUST 1991 Self-Consistent Model of Minority-Carrier

    E-Print Network [OSTI]

    Florida, University of

    IEEE ELECTRON DEVICE LETTERS, VOL. 12, NO. 8, AUGUST 1991 Self-Consistent Model of Minority-Carrier Lifetime, Diffusion Length, and Mobility Mark E. Law, Member, IEEE, E. Solley, M. Liang, and Dorothea E. Burk, Member, IEEE Abstract-The minority-carrier mobility is an important pa- rameter in the simulation

  1. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 44, NO. 12, DECEMBER 1997 2149 An RTD/Transistor Switching Block and Its

    E-Print Network [OSTI]

    Zhou, Chongwu

    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 44, NO. 12, DECEMBER 1997 2149 An RTDCormack, C. W. Zhou, and M. A. Reed, Senior Member, IEEE Abstract-- We propose and demonstrate both a binary RTD characteristics, increasing the noise margin for each state. 0018­9383/97$10.00 © 1997 IEEE #12

  2. IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 2, FEBRUARY 2008 183 Externally Assembled Gate-All-Around Carbon

    E-Print Network [OSTI]

    IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 2, FEBRUARY 2008 183 Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor Zhihong Chen, Member, IEEE, Damon Farmer, Sheng Xu, Roy Gordon, Phaedon Avouris, Member, IEEE, and Joerg Appenzeller, Senior Member, IEEE Abstract--In this letter, we

  3. IEEE ELECTRON DEVICE LETTERS, VOL. 31, NO. 8, AUGUST 2010 809 New Process Development for Planar-Type

    E-Print Network [OSTI]

    Dagenais, Mario

    IEEE ELECTRON DEVICE LETTERS, VOL. 31, NO. 8, AUGUST 2010 809 New Process Development for Planar-Type CIC Tunneling Diodes Kwangsik Choi, Filiz Yesilkoy, Athanasios Chryssis, Mario Dagenais, Fellow, IEEE, and Martin Peckerar, Fellow, IEEE Abstract--A planar-type conductor­insulator­conductor tun- neling diode

  4. 238 IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 5, MAY 2004 Polyimide Passivated AlGaNGaN HFETs With

    E-Print Network [OSTI]

    Shen, Shyh-Chiang

    238 IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 5, MAY 2004 Polyimide Passivated AlGaN­GaN HFETs, degrading RF performance. A passivation scheme utilizing a polyimide film as the passivating layer. This data suggests that polyimide can be an effective passivation film for reducing surface states. Index

  5. Field mapping by off-axis electron holography: from devices to the detection of single dopant atoms.

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    as for new innovative devices that are composed of nanowires and 2D films such as graphene. The continuous mapping, semiconductors, graphene Off-axis electron holography is a unique technique that allows be clearly resolved. Figure 2(d) shows the potential profiles of the layers compared to a HAADF intensity

  6. Impact of SiC Power Electronic Devices for Hybrid Electric Vehicles Leon M. Tolbert1,2

    E-Print Network [OSTI]

    Tolbert, Leon M.

    of these systems is approaching the theoretical limits of the Si fundamental material properties. The emergence As mentioned earlier, SiC is a wide-bandgap semiconductor, and this property of SiC is expected to yield properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have

  7. 14 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 1, JANUARY 2001 Atomic Scale Effects of Zirconium and Hafnium

    E-Print Network [OSTI]

    Dutton, Robert W.

    14 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 1, JANUARY 2001 Atomic Scale Effects of Zirconium Abstract--First principles calculations aimed at quantifying the effects of zirconium and hafnium]. For any proposed material, achieving a high quality interface with silicon (Si) is essential. Zirconium

  8. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 6, JUNE 2002 991 Active-Matrix Organic Light-Emitting Diode

    E-Print Network [OSTI]

    manufacturing practice, it is far from ideal. Organic light- emitting diodes (OLEDs) [1] are being hotly pursuedIEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 6, JUNE 2002 991 Active-Matrix Organic Light, particularly in terms of current-drive and parameter uniformity, for ac- tive-matrix organic light

  9. Interconnected semiconductor devices

    DOE Patents [OSTI]

    Grimmer, Derrick P. (White Bear Lake, MN); Paulson, Kenneth R. (North St. Paul, MN); Gilbert, James R. (St. Paul, MN)

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  10. Integrated device architectures for electrochromic devices

    DOE Patents [OSTI]

    Frey, Jonathan Mack; Berland, Brian Spencer

    2015-04-21

    This disclosure describes systems and methods for creating monolithically integrated electrochromic devices which may be a flexible electrochromic device. Monolithic integration of thin film electrochromic devices may involve the electrical interconnection of multiple individual electrochromic devices through the creation of specific structures such as conductive pathway or insulating isolation trenches.

  11. Method of making compound semiconductor films and making related electronic devices

    DOE Patents [OSTI]

    Basol, Bulent M. (Manhattan Beach, CA); Kapur, Vijay K. (Tarzana, CA); Halani, Arvind T. (Northridge, CA); Leidholm, Craig R. (Woodland Hills, CA); Roe, Robert A. (Glendale, CA)

    1999-01-01

    A method of forming a compound film includes the steps of preparing a source material, depositing the source material on a base to form a precursor film, and heating the precursor film in a suitable atmosphere to form a film. The source material includes Group IB-IIIA alloy-containing particles having at least one Group IB-IIIA alloy phase, with Group IB-IIIA alloys constituting greater than about 50 molar percent of the Group IB elements and greater than about 50 molar percent of the Group IIIA elements in the source material. The film, then, includes a Group IB-IIIA-VIA compound. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.80 and less than about 1.0, or substantially greater than 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.80 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The alloy phase may include a dopant. Compound films including a Group IIB-IVA-VA compound or a Group IB-VA-VIA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.

  12. Initial Clinical Experience Performing Patient Treatment Verification With an Electronic Portal Imaging Device Transit Dosimeter

    SciTech Connect (OSTI)

    Berry, Sean L.; Polvorosa, Cynthia; Cheng, Simon; Deutsch, Israel; Chao, K. S. Clifford; Wuu, Cheng-Shie

    2014-01-01

    Purpose: To prospectively evaluate a 2-dimensional transit dosimetry algorithm's performance on a patient population and to analyze the issues that would arise in a widespread clinical adoption of transit electronic portal imaging device (EPID) dosimetry. Methods and Materials: Eleven patients were enrolled on the protocol; 9 completed and were analyzed. Pretreatment intensity modulated radiation therapy (IMRT) patient-specific quality assurance was performed using a stringent local 3%, 3-mm ? criterion to verify that the planned fluence had been appropriately transferred to and delivered by the linear accelerator. Transit dosimetric EPID images were then acquired during treatment and compared offline with predicted transit images using a global 5%, 3-mm ? criterion. Results: There were 288 transit images analyzed. The overall ? pass rate was 89.1% ± 9.8% (average ± 1 SD). For the subset of images for which the linear accelerator couch did not interfere with the measurement, the ? pass rate was 95.7% ± 2.4%. A case study is presented in which the transit dosimetry algorithm was able to identify that a lung patient's bilateral pleural effusion had resolved in the time between the planning CT scan and the treatment. Conclusions: The EPID transit dosimetry algorithm under consideration, previously described and verified in a phantom study, is feasible for use in treatment delivery verification for real patients. Two-dimensional EPID transit dosimetry can play an important role in indicating when a treatment delivery is inconsistent with the original plan.

  13. 504 IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 4, APRIL 2012 Ultrathin-Body High-Mobility InAsSb-on-Insulator

    E-Print Network [OSTI]

    Javey, Ali

    504 IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 4, APRIL 2012 Ultrathin-Body High-Mobility In- effect transistors (FETs) with ultrahigh electron mobilities are reported. The devices are obtainedAsSb-on-insulator FETs exhibit an effective mobility of 3400 cm2 /V · s for a body thickness of 7 nm, which rep- resents

  14. Electron-beam-induced information storage in hydrogenated amorphous silicon devices

    DOE Patents [OSTI]

    Yacobi, B.G.

    1985-03-18

    A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.

  15. Mechanical and electrical evaluation of parylene-C encapsulated carbon nanotube networks on a flexible substrate

    E-Print Network [OSTI]

    Dokmeci, Mehmet

    Mechanical and electrical evaluation of parylene-C encapsulated carbon nanotube networks, interconnects, and sensors. In this letter, we demonstrate the fabrication of single-walled carbon nanotube SWNT.1063/1.2976633 Carbon nanotube CNT networks are excellent candi- dates for flexible electronic devices and sensors due

  16. Dopant Profiling of III-V Nanostructures for Electronic Applications

    E-Print Network [OSTI]

    Ford, Alexandra Caroline

    2011-01-01

    and/or large-area, flexible electronics (Figure 1).mechanically flexible macro-electronics and photovoltaics

  17. Electronic and Vibrational Properties of Low-Dimensional Heterogeneous Systems: Materials and Device Perspectives

    E-Print Network [OSTI]

    Neupane, Mahesh Raj

    2015-01-01

    electronic structure calculation package QUANTUM ESPRESSO [311]. MD Calculation Molecular dynamics (

  18. The dependence of potential well formation on the magnetic field strength and electron injection current in a polywell device

    SciTech Connect (OSTI)

    Cornish, S., E-mail: cornish@physics.usyd.edu.au; Gummersall, D.; Carr, M.; Khachan, J. [School of Physics, The University of Sydney, Sydney, NSW 2006 (Australia)

    2014-09-15

    A capacitive probe has been used to measure the plasma potential in a polywell device in order to observe the dependence of potential well formation on magnetic field strength, electron injection current, and polywell voltage bias. The effectiveness of the capacitive probe in a high energy electron plasma was determined by measuring the plasma potential of a planar diode with an axial magnetic field. The capacitive probe was translated along the axis of one of the field coils of the polywell, and the spatial profile of the potential well was measured. The confinement time of electrons in the polywell was estimated with a simple analytical model which used the experimentally observed potential well depths, as well as a simulation of the electron trajectories using particle orbit theory.

  19. Device and method for relativistic electron beam heating of a high-density plasma to drive fast liners

    DOE Patents [OSTI]

    Thode, Lester E. (Los Alamos, NM)

    1981-01-01

    A device and method for relativistic electron beam heating of a high-density plasma in a small localized region. A relativistic electron beam generator or accelerator produces a high-voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low-density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high-density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10.sup.17 to 10.sup.20 electrons per cubic centimeter. The target gas is ionized prior to application of the electron beam by means of a laser or other preionization source to form a plasma. Utilizing a relativistic electron beam with an individual particle energy exceeding 3 MeV, classical scattering by relativistic electrons passing through isolation foils is negligible. As a result, relativistic streaming instabilities are initiated within the high-density target plasma causing the relativistic electron beam to efficiently deposit its energy and momentum into a small localized region of the high-density plasma target. Fast liners disposed in the high-density target plasma are explosively or ablatively driven to implosion by a heated annular plasma surrounding the fast liner which is generated by an annular relativistic electron beam. An azimuthal magnetic field produced by axial current flow in the annular plasma, causes the energy in the heated annular plasma to converge on the fast liner.

  20. Laser Assisted Nanomanufacturing with Solution Processed Nanoparticles for Low-cost Electronics and Photovoltaics

    E-Print Network [OSTI]

    Pan, Heng

    2009-01-01

    Fig. 1. 1 Flexible electronics and flexible solar cells. Inof metal oxide based electronics on heat sensitive flexibleNanoparticles for Low-cost Electronics and Photovoltaics by

  1. An approach to simultaneously test multiple devices for high-throughput production of thin film electronics

    E-Print Network [OSTI]

    Kumar, A.; Flewitt, A. J.

    2015-07-28

    of transparent flexible thin-film transistors using amorphous oxide semiconductors.,” Nature, vol. 432, no. 7016, pp. 488–492, 2004. [2] E. Fortunato, P. Barquinha, and R. Martins, “Oxide semiconductor thin-film transistors: a review of recent advances... , M. Lavine, and R. Coontz, “Looking Beyond Silicon,” Science, vol. 327, no. 5973. pp. 1595–1595, 2010. [6] A. J. Flewitt, “Hydrogenated Amorphous Silicon Thin Film Transistors (a Si:H TFTs),” Handbook of Visual Display Technology-Springer, 2012...

  2. Inkjet-Printed Ferromagnetic Nanoparticles for Miniaturization of Flexible Printed RF Inductors

    E-Print Network [OSTI]

    Tentzeris, Manos

    the inductor for flexible printed electronics. This flexible, miniaturized inductor can be coupledInkjet-Printed Ferromagnetic Nanoparticles for Miniaturization of Flexible Printed RF Inductors to apply ferromagnetic nanomaterial is investigated to produce a truly flexible, printed RF inductor

  3. Using Wireless Power Meters to Measure Energy Use of Miscellaneous and Electronic Devices in Buildings

    E-Print Network [OSTI]

    Brown, Richard

    2012-01-01

    of collecting device-level energy data. This paper describescollects the power and energy data, stores it in a database,collect whole-building energy data to calculate the fraction

  4. General Cause of Sheath Instability Identified for Low Collisionality Plasmas in Devices with Secondary Electron Emission

    E-Print Network [OSTI]

    Kaganovich, Igor

    General Cause of Sheath Instability Identified for Low Collisionality Plasmas in Devices increase near-wall conductiv- ity in HT's [10,12] and cause interference [13]. However, the precise causes

  5. Design of an improved electronics platform for the EyeRing wearable device

    E-Print Network [OSTI]

    Ran, Kelly (Kelly A.)

    2014-01-01

    This thesis presents a new prototype for EyeRing, a finger-worn device equipped with a camera and other peripherals. EyeRing is used in assistive technology applications, helping visually impaired people interact with ...

  6. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    DOE Patents [OSTI]

    Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

    2014-05-20

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  7. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    SciTech Connect (OSTI)

    Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne

    2014-06-17

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  8. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    University of Illinois (Urbana, IL)

    2009-04-21

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  9. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    DOE Patents [OSTI]

    Rogers, John A. (Champaign, IL); Khang, Dahl-Young (Seoul, KR); Sun, Yugang (Naperville, IL); Menard, Etienne (Durham, NC)

    2012-06-12

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  10. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    DOE Patents [OSTI]

    Rogers, John A. (Champaign, IL); Meitl, Matthew (Raleigh, NC); Sun, Yugang (Naperville, IL); Ko, Heung Cho (Urbana, IL); Carlson, Andrew (Urbana, IL); Choi, Won Mook (Champaign, IL); Stoykovich, Mark (Dover, NH); Jiang, Hanqing (Urbana, IL); Huang, Yonggang (Glencoe, IL); Nuzzo, Ralph G. (Champaign, IL); Lee, Keon Jae (Tokyo, JP); Zhu, Zhengtao (Rapid City, SD); Menard, Etienne (Durham, NC); Khang, Dahl-Young (Seoul, KR); Kan, Seong Jun (Daejeon, KR); Ahn, Jong Hyun (Suwon, KR); Kim, Hoon-sik (Champaign, IL)

    2012-07-10

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  11. What can you do with energy-efficient optics and photonics? Well, for starters... FOOTPRINT CLEAN ENERGY WORK SLOW CLIMATE CHANGE CONSERVATION DIRECT CURRENT EFFICIENT SUN FLEXIBLE FUEL ELECTRON OFF-THE-GRID THERMAL ENERGY ENGINEER ENVIRONMEN

    E-Print Network [OSTI]

    Faure, Claudie

    devices, creating a power plant. Utilize solar energy at night with nanostructured capacitors, and use · ELECTRON · OFF-THE-GRID · THERMAL ENERGY · ENGINEER · ENVIRONMENT · FURNACE · SOLAR POWER · CURRENT SOLAR, PHOTONIC DEVICES FOR EFFICIENT HARVESTING AND CONVERSION OF SOLAR ENERGY DEVICESFORMONITORINGENERGYUSAGE,MONITORINGEXHAUSTGASESANDPOLLUTANTS,ENERGY

  12. DOI: 10.1002/adma.200602223 Inorganic Semiconductors for Flexible

    E-Print Network [OSTI]

    Rogers, John A.

    DOI: 10.1002/adma.200602223 Inorganic Semiconductors for Flexible Electronics** By Yugang Sun* and John A. Rogers* 1. Introduction Electronic systems that can cover large areas on flexible substrates of applications that lie outside those easily addressed with wafer-based electron- ics. Examples include flexible

  13. Device-level thermal analysis of GaN-based electronics

    E-Print Network [OSTI]

    Bagnall, Kevin Robert

    2013-01-01

    Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

  14. Design of scaled electronic devices based on III-V materials

    E-Print Network [OSTI]

    Wang, Lingquan

    2009-01-01

    superior III-V semiconductor material properties, namely theproperties and material versatility of the III-V semiconductormaterial properties, i.e. the electronic structure. Conventional treatment of semiconductor

  15. Modelling Heat Transport Across Nano-scale Material Interfaces for Next-generation Electronic Devices

    E-Print Network [OSTI]

    Milgram, Paul

    ) thermal boundary resistance between two dissimilar semiconductor materials using a combinationModelling Heat Transport Across Nano-scale Material Interfaces for Next-generation Electronic) with customized thermal transport properties. The scattering of thermal energy carriers at fabricated interfaces

  16. Magnetic and electric bulge-test instrument for the determination of coupling mechanical properties of functional free-standing films and flexible electronics

    SciTech Connect (OSTI)

    Yu, Zejun; Li, Faxin; Pei, Yongmao, E-mail: peiym@pku.edu.cn, E-mail: fangdn@pku.edu.cn; Fang, Daining, E-mail: peiym@pku.edu.cn, E-mail: fangdn@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Mao, Weiguo [Faculty of Materials and Optoelectronics Physics, Xiangtan University, Hunan 411105 (China); Feng, Xue [Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China)

    2014-06-15

    For the first time a novel multi-field bulge-test instrument which enables measurements of the biaxial mechanical properties and electro-magnetic-mechanical coupling effect of free-standing films in external magnetic/electric fields was proposed. The oil pressure was designed with two ranges, 0–1 MPa for elastic small deformation and 0–7 MPa for plastic/damage large deformation. A magnetic field that was horizontal and uniform in the film plane was supplied by a hollow cylindrical magnet. The magnitude could be changed from 0 to 10?000 Oe by adjusting the position of the testing film. Meanwhile, an electric field applied on the film was provided by a voltage source (Maximum voltage: 1000 V; Maximum current: 1 A). Various signals related to deformation, mechanical loading, magnetic field, and electric field could be measured simultaneously without mutual interference, which was confirmed by the coincidence of the measured P-H curves for titanium (Ti)/nickel (Ni) specimens with/without external fields. A hardening phenomenon under magnetic/electric fields was observed for Ni and lead zirconate titanate specimens. The multi-field bulge-test instrument will provide a powerful research tool to study the deformation mechanism of functional films and flexible electronics in the coupling field.

  17. FA12 Nanoscale Devices & Systems MS Exam Solution 1. For small semiconductor quantum dot structures, the single-electron charging energy can

    E-Print Network [OSTI]

    California at San Diego, University of

    FA12 Nanoscale Devices & Systems MS Exam Solution 1. For small semiconductor quantum dot structures, the single-electron charging energy can become comparable to the quantum confinement energies in the dot effective mass 0 * 5.0 mmp , where m0 is the free electron mass. An infinite potential energy barrier

  18. Electronic & magnetic materials and devices at the CNM | Argonne National

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansas Nuclear ProfileMultiferroicAwardElectronElectronic &

  19. Design Considerations for Digital Circuits Using Organic Thin Film Transistors on a Flexible Substrate

    E-Print Network [OSTI]

    Qiu, Qinru

    . INTRODUCTION Flexible electronics is a new technology for building electronic circuits by depositing electronic-based electronics, flexible electronics has the following advantages. First of all, it can take variable forms-area applications. Two of the often-discussed application drivers for flexible electronics are: radio

  20. Scalable Heuristics for Planning, Placement and Sizing of Flexible...

    Office of Scientific and Technical Information (OSTI)

    and Sizing of Flexible AC Transmission System Devices Aiming to relieve transmission grid congestion and improve or extend feasibility domain of the operations, we build...

  1. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    SciTech Connect (OSTI)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325?°C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200??m in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  2. Practical method and device for enhancing pulse contrast ratio for lasers and electron accelerators

    DOE Patents [OSTI]

    Zhang, Shukui; Wilson, Guy

    2014-09-23

    An apparatus and method for enhancing pulse contrast ratios for drive lasers and electron accelerators. The invention comprises a mechanical dual-shutter system wherein the shutters are placed sequentially in series in a laser beam path. Each shutter of the dual shutter system has an individually operated trigger for opening and closing the shutter. As the triggers are operated individually, the delay between opening and closing first shutter and opening and closing the second shutter is variable providing for variable differential time windows and enhancement of pulse contrast ratio.

  3. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    SciTech Connect (OSTI)

    Bolat, Sami Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-15

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.

  4. Sponsored by Nanotechnology Seminar Program Flexible and Transparent Optoelectronics

    E-Print Network [OSTI]

    Fisher, Frank

    to fabricate high-performance and flexible electronics. The physics of Quantum-dots Light Emitting Diodes as a Postdoctoral Research Associate, where he was involved in research of flexible and stretchable electronicSponsored by Nanotechnology Seminar Program Flexible and Transparent Optoelectronics based

  5. A self-powered electrochromic device driven by a nanogenerator Xiaohong Yang,ab

    E-Print Network [OSTI]

    Wang, Zhong L.

    and high colora- tion efficiency13­16 that make them suitable for a variety of applica- tions such as smart windows, electronic billboards, as well as displays of portable and flexible devices including smart cards diagrams of self-powered EC systems. The power source unit has an NG and a full-wave bridge for recti

  6. Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices

    E-Print Network [OSTI]

    Lin, Andrew

    2015-01-01

    D.H. Kim and J.A. Del Alamo, IEEE Electron Device LettersM. Hong, and J.A. del Alamo, MRS Bulletin 39, 668 (2014).98, 2005 (2010). J.A. del Alamo, Nature 479, 317 (2011). H.

  7. IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 5, MAY 2015 517 1/ f Noise Characteristics of MoS2 Thin-Film

    E-Print Network [OSTI]

    IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 5, MAY 2015 517 1/ f Noise Characteristics of MoS2 Thin Samnakay, Student Member, IEEE, Michael S. Shur, Life Fellow, IEEE, and Alexander A. Balandin, Fellow, IEEE USA. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee

  8. IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 7, JULY 2012 967 Size-Dependent-Transport Study of In0.53Ga0.47As

    E-Print Network [OSTI]

    IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 7, JULY 2012 967 Size-Dependent-Transport Study of In0 Jiangjiang J. Gu, Student Member, IEEE, Heng Wu, Yiqun Liu, Adam T. Neal, Roy G. Gordon, and Peide D. Ye, Senior Member, IEEE Abstract--InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm

  9. 654 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 4, APRIL 2007 Asymmetric Electrical Properties of Corbino a-Si:H

    E-Print Network [OSTI]

    Kanicki, Jerzy

    654 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 4, APRIL 2007 Asymmetric Electrical Arbor, MI 48109 USA, and also with the LG Philips LCD Research and Development Center, An-Yang 431-080, Korea. C.-D. Kim and I.-J. Chung are with the LG Philips LCD Research and Development Center, An

  10. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 12, DECEMBER 2001 2695 A New 4H-SiC Lateral Merged Double Schottky

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    of the proposed lateral device utilizes the trenches filled with a high barrier Schottky (HBS) metal to pinch off is with the Centre for Applied Research in Electronics, Indian Insti- tute of Technology, New Delhi-110 016, India. M. J. Kumar is with the Department of Electrical Engineering, Indian Institute of Technology, New Delhi

  11. Development of a one-stop beam verification system using electronic portal imaging devices for routine quality assurance

    SciTech Connect (OSTI)

    Lim, Sangwook; Ma, Sun Young; Jeung, Tae Sig; Yi, Byong Yong; Lee, Sang Hoon; Lee, Suk; Cho, Sam Ju; Choi, Jinho

    2012-10-01

    In this study, a computer-based system for routine quality assurance (QA) of a linear accelerator (linac) was developed by using the dosimetric properties of an amorphous silicon electronic portal imaging device (EPID). An acrylic template phantom was designed such that it could be placed on the EPID and be aligned with the light field of the collimator. After irradiation, portal images obtained from the EPID were transferred in DICOM format to a computer and analyzed using a program we developed. The symmetry, flatness, field size, and congruence of the light and radiation fields of the photon beams from the linac were verified simultaneously. To validate the QA system, the ion chamber and film (X-Omat V2; Kodak, New York, NY) measurements were compared with the EPID measurements obtained in this study. The EPID measurements agreed with the film measurements. Parameters for beams with energies of 6 MV and 15 MV were obtained daily for 1 month using this system. It was found that our QA tool using EPID could substitute for the film test, which is a time-consuming method for routine QA assessment.

  12. SU-E-T-335: Transit Dosimetry for Verification of Dose Delivery Using Electronic Portal Imaging Device (EPID)

    SciTech Connect (OSTI)

    Baek, T; Chung, E; Lee, S; Yoon, M

    2014-06-01

    Purpose: To evaluate the effectiveness of transit dose, measured with an electronic portal imaging device (EPID), in verifying actual dose delivery to patients. Methods: Plans of 5 patients with lung cancer, who received IMRT treatment, were examined using homogeneous solid water phantom and inhomogeneous anthropomorphic phantom. To simulate error in patient positioning, the anthropomorphic phantom was displaced from 5 mm to 10 mm in the inferior to superior (IS), superior to inferior (SI), left to right (LR), and right to left (RL) directions. The transit dose distribution was measured with EPID and was compared to the planed dose using gamma index. Results: Although the average passing rate based on gamma index (GI) with a 3% dose and a 3 mm distance-to-dose agreement tolerance limit was 94.34 % for the transit dose with homogeneous phantom, it was reduced to 84.63 % for the transit dose with inhomogeneous anthropomorphic phantom. The Result also shows that the setup error of 5mm (10mm) in IS, SI, LR and SI direction can Result in the decrease in values of GI passing rates by 1.3% (3.0%), 2.2% (4.3%), 5.9% (10.9%), and 8.9% (16.3%), respectively. Conclusion: Our feasibility study suggests that the transit dose-based quality assurance may provide information regarding accuracy of dose delivery as well as patient positioning.

  13. Flexible hydropower: boosting energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Flexible hydropower: boosting energy Flexible hydropower: boosting energy New hydroelectric resource for Northern New Mexico supplies clean energy to homes, businesses and the Lab....

  14. Semi-flexible bimetal-based thermal energy harvesters

    E-Print Network [OSTI]

    Boisseau, S; Monfray, S; Puscasu, O; Skotnicki, T; 10.1088/0964-1726/22/2/025021

    2013-01-01

    This paper introduces a new semi-flexible device able to turn thermal gradients into electricity by using a curved bimetal coupled to an electret-based converter. In fact, a two-steps conversion is carried out: (i) a curved bimetal turns the thermal gradient into a mechanical oscillation that is then (ii) converted into electricity thanks to an electrostatic converter using electrets in Teflon (r). The semi-flexible and low cost design of these new energy converters pave the way to mass production over large areas of thermal energy harvesters. Raw output powers up to 13.46uW per device were reached on a hot source at 60{\\deg}C and forced convection. Then, a DC-to-DC flyback converter has been sized to turn the energy harvesters' raw output powers into a viable supply source for an electronic circuit (DC-3V). At the end, 10uW of directly usable output power were reached with 3 devices, which is compatible with Wireless Sensor Networks powering applications. Please cite as : S Boisseau et al 2013 Smart Mater. S...

  15. Towards Flexible Process Support on Mobile Devices

    E-Print Network [OSTI]

    Ulm, Universität

    and Manfred Reichert Institute for Databases and Information Systems, Ulm University, Germany {ruediger. Mobile application scenar- ios are diverse and encompass domains like healthcare, logistics, and sales in the MARPLE project. MARPLE targets at a tight integration of pro- cess management technology with mobile

  16. Nanoscale Electronic Devices

    E-Print Network [OSTI]

    Jing, Xiaoye

    2010-01-01

    Journal of Applied Electrochemistry, 2000. 30(5): p. 533-by template-assisted electrochemistry and chemical vaporSAD) patterns. For electrochemistry nanowire, ambipolar

  17. Nanoscale Electronic Devices

    E-Print Network [OSTI]

    Jing, Xiaoye

    2010-01-01

    In practice, naturally-grown oxide layer on the surface ofThe naturally grown oxide layer is difficult to estimate dueNH 4 ) 2 S X removes oxide layer of III-V material through a

  18. A study of tungsten spectra using large helical device and compact electron beam ion trap in NIFS

    SciTech Connect (OSTI)

    Morita, S.; Goto, M.; Murakami, I. [National Institute for Fusion Science, Toki 509-5292, Gifu (Japan); Department of Fusion Science, Graduate University for Advanced Studies, Toki 509-5292, Gifu (Japan); Dong, C. F.; Kato, D.; Sakaue, H. A.; Oishi, T. [National Institute for Fusion Science, Toki 509-5292, Gifu (Japan); Hasuo, M. [Department of Mechanical Engineering and Science, Graduate School of Engineering, Kyoto University, Kyoto 606-8501 (Japan); Koike, F. [Physics Laboratory, School of Medicine, Kitasato University, Sagamihara 252-0374 (Japan); Nakamura, N. [Institute of Laser Science, University of Electro-Communications, Tokyo 182-8585 (Japan); Sasaki, A. [Quantum Beam Science Directorate, Japan Atomic Energy Research Agency, Kizugawa 619-0215, Kyoto (Japan); Wang, E. H. [Department of Fusion Science, Graduate University for Advanced Studies, Toki 509-5292, Gifu (Japan)

    2013-07-11

    Tungsten spectra have been observed from Large Helical Device (LHD) and Compact electron Beam Ion Trap (CoBIT) in wavelength ranges of visible to EUV. The EUV spectra with unresolved transition array (UTA), e.g., 6g-4f, 5g-4f, 5f-4d and 5p-4d transitions for W{sup +24-+33}, measured from LHD plasmas are compared with those measured from CoBIT with monoenergetic electron beam ({<=}2keV). The tungsten spectra from LHD are well analyzed based on the knowledge from CoBIT tungsten spectra. The C-R model code has been developed to explain the UTA spectra in details. Radial profiles of EUV spectra from highly ionized tungsten ions have been measured and analyzed by impurity transport simulation code with ADPAK atomic database code to examine the ionization balance determined by ionization and recombination rate coefficients. As the first trial, analysis of the tungsten density in LHD plasmas is attempted from radial profile of Zn-like WXLV (W{sup 44+}) 4p-4s transition at 60.9A based on the emission rate coefficient calculated with HULLAC code. As a result, a total tungsten ion density of 3.5 Multiplication-Sign 10{sup 10}cm{sup -3} at the plasma center is reasonably obtained. In order to observe the spectra from tungsten ions in lower-ionized charge stages, which can give useful information on the tungsten influx in fusion plasmas, the ablation cloud of the impurity pellet is directly measured with visible spectroscopy. A lot of spectra from neutral and singly ionized tungsten are observed and some of them are identified. A magnetic forbidden line from highly ionized tungsten ions has been examined and Cd-like WXXVII (W{sup 26+}) at 3893.7A is identified as the ground-term fine-structure transition of 4f{sup 23}H{sub 5}-{sup 3}H{sub 4}. The possibility of {alpha} particle diagnostic in D-T burning plasmas using the magnetic forbidden line is discussed.

  19. SU-E-T-438: Commissioning of An In-Vivo Quality Assurance Method Using the Electronic Portal Imaging Device

    SciTech Connect (OSTI)

    Morin, O; Held, M; Pouliot, J

    2014-06-01

    Purpose: Patient specific pre-treatment quality assurance (QA) using arrays of detectors or film have been the standard approach to assure the correct treatment is delivered to the patient. This QA approach is expensive, labor intensive and does not guarantee or document that all remaining fractions were treated properly. The purpose of this abstract is to commission and evaluate the performance of a commercially available in-vivo QA software using the electronic portal imaging device (EPID) to record the daily treatments. Methods: The platform EPIgray V2.0.2 (Dosisoft), which machine model compares ratios of TMR with EPID signal to predict dose was commissioned for an Artiste (Siemens Oncology Care Systems) and a Truebeam (Varian medical systems) linear accelerator following the given instructions. The systems were then tested on three different phantoms (homogeneous stack of solid water, anthropomorphic head and pelvis) and on a library of patient cases. Simple and complex fields were delivered at different exposures and for different gantry angles. The effects of the table attenuation and the EPID sagging were evaluated. Gamma analysis of the measured dose was compared to the predicted dose for complex clinical IMRT cases. Results: Commissioning of the EPIgray system for two photon energies took 8 hours. The difference between the dose planned and the dose measured with EPIgray was better than 3% for all phantom scenarios tested. Preliminary results on patients demonstrate an accuracy of 5% is achievable in high dose regions for both 3DCRT and IMRT. Large discrepancies (>5%) were observed due to metallic structures or air cavities and in low dose areas. Flat panel sagging was visible and accounted for in the EPIgray model. Conclusion: The accuracy achieved by EPIgray is sufficient to document the safe delivery of complex IMRT treatments. Future work will evaluate EPIgray for VMAT and high dose rate deliveries. This work is supported by Dosisoft, Cachan, France.

  20. 2052 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 35. NO. II, NOVEMBER 1988 Design of the Laser-Driven RF Electron Gun for the

    E-Print Network [OSTI]

    McDonald, Kirk

    -Driven RF Electron Gun for the BNL Accelerator Test Facility KIRK T. McDONALD Abstract-The BNL electron gun due to the effects of space-charge and nonlinear RF fields. The design of the gun was aided diagram of the linac and laser components. Here we report on the design of the electron gun

  1. Development of an X-ray pixel detector with multi-port charge-coupled device for X-ray free-electron laser experiments

    SciTech Connect (OSTI)

    Kameshima, Takashi; Ono, Shun; Kudo, Togo; Ozaki, Kyosuke; Kirihara, Yoichi; Kobayashi, Kazuo; Inubushi, Yuichi; Yabashi, Makina; Hatsui, Takaki; RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 ; Horigome, Toshio; Holland, Andrew; Holland, Karen; Burt, David; Murao, Hajime

    2014-03-15

    This paper presents development of an X-ray pixel detector with a multi-port charge-coupled device (MPCCD) for X-ray Free-Electron laser experiments. The fabrication process of the CCD was selected based on the X-ray radiation hardness against the estimated annual dose of 1.6 × 10{sup 14} photon/mm{sup 2}. The sensor device was optimized by maximizing the full well capacity as high as 5 Me- within 50 ?m square pixels while keeping the single photon detection capability for X-ray photons higher than 6 keV and a readout speed of 60 frames/s. The system development also included a detector system for the MPCCD sensor. This paper summarizes the performance, calibration methods, and operation status.

  2. MS Exam, Fall 2012, Solid State Electronic Devices (ECE 230A-B) 1. III-V compound semiconductor GaAs has two families of cleavage planes (110) and

    E-Print Network [OSTI]

    Wang, Deli

    MS Exam, Fall 2012, Solid State Electronic Devices (ECE 230A-B) ECE230A: 1. III-V compound of GaAs crystal. 1 #12;MS Exam, Fall 2012, Solid State Electronic Devices (ECE 230A-B) ECE 230B: Assume silicon, room temperature, complete ionization. 1. For an abrupt n+-p diode in Si, the n+ doping is 1020

  3. AC-driven, color-and brightness-tunable organic light-emitting diodes constructed from an electron only device

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    - and brightness-tunable organic light-emitting diode (OLED) is reported. This OLED was realized by inserting emission from an organic light- emitting diode (OLED) [1] results from the electron/hole recombinationAC-driven, color- and brightness-tunable organic light-emitting diodes constructed from an electron

  4. Opportunistic, collaborative and synchronized, proximal device ecology

    E-Print Network [OSTI]

    Toledano, Eyal

    2013-01-01

    CoSync is an on-device software framework for coordinating proximal consumer electronic devices in order to create a synchronized, opportunistic and collaborative device ecology. The CoSync device ecology combines multiple ...

  5. Flexible moldable conductive current-limiting materials

    DOE Patents [OSTI]

    Shea, John Joseph (Pittsburgh, PA); Djordjevic, Miomir B. (Milwaukee, WI); Hanna, William Kingston (Pittsburgh, PA)

    2002-01-01

    A current limiting PTC device (10) has two electrodes (14) with a thin film of electric conducting polymer material (20) disposed between the electrodes, the polymer material (20) having superior flexibility and short circuit performance, where the polymer material contains short chain aliphatic diepoxide, conductive filler particles, curing agent, and, preferably, a minor amount of bisphenol A epoxy resin.

  6. OLED devices

    DOE Patents [OSTI]

    Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

    2011-02-22

    An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

  7. 1120 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 5, MAY 2006 Theory of Interface-Trap-Induced NBTI Degradation

    E-Print Network [OSTI]

    Alam, Muhammad A.

    mechanisms that generate traps at the Si-channel/gate-oxide interface of MOSFETs during transistor operation. The semiconductor/oxide interface is a rough surface where the highly ordered crystalline channel and the amor lead to poor device performance; therefore, the transistors are annealed in hydrogen ambient during

  8. IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 9, SEPTEMBER 2009 993 Pseudo-MOSFET Drain-Current Transients

    E-Print Network [OSTI]

    Schroder, Dieter K.

    .2027719 Fig. 1. Measured (a) ID-VGb and (b) ID-t and IG-t characteristics for low Bp. II. EXPERIMENTS The p-current­back-gate voltage (ID­VGb) characteristic of a device with low hole Schottky barriers is s

  9. Optical plasma microelectronic devices

    E-Print Network [OSTI]

    Forati, Ebrahim; Dill, Thyler; Sievenpiper, Dan

    2015-01-01

    The semiconductor channel in conventional microelectronic devices was successfully replaced with an optically triggered gas plasma channel. The combination of DC and laser-induced gas ionizations controls the conductivity of the channel, enabling us to realize different electronic devices such as transistors, switches, modulators, etc. A special micro-scale metasurface was used to enhance the laser-gas interaction, as well as combining it with DC ionization properly. Optical plasma devices benefit form the advantages of plasma/vacuum electronic devices while preserving most of the integrablity of semiconductor based devices.

  10. Fully Printed, High Performance Carbon Nanotube Thin-Film Transistors on Flexible Substrates

    E-Print Network [OSTI]

    Javey, Ali

    range of large-area electronic applications based on carbon nanotube networks. KEYWORDS: Flexible using SWNT TFTs has been shown.1,5,7,8 In order to enable the use of flexible electronics for largeFully Printed, High Performance Carbon Nanotube Thin-Film Transistors on Flexible Substrates Pak

  11. 2100 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 8, AUGUST 2012 A Distributed Bulk-Oxide Trap Model

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    a distributed circuit model for bulk-oxide traps based on tunneling between the semiconductor surface and trap explained by the distributed bulk-oxide trap model. Index Terms--Bulk-oxide trap, III­V, MOS, tunneling. I-oxide traps or border traps, do have long time constants as they interact with the conduction band electrons

  12. Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same

    DOE Patents [OSTI]

    Aytug, Tolga (Knoxville, TN); Paranthaman, Mariappan Parans (Knoxville, TN); Polat, Ozgur (Knoxville, TN)

    2012-07-17

    An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.

  13. Abstract--The increase in use of power electronics in transmission and distribution applications is the driving

    E-Print Network [OSTI]

    Tolbert, Leon M.

    of the systems. High Voltage DC (HVDC) transmission and Flexible AC Transmission Systems (FACTS) are the widelyAbstract-- The increase in use of power electronics in transmission and distribution applications and compared for SiC and Si devices. These loss models are integrated with an HVDC transmission system to study

  14. Method for fabricating an interconnected array of semiconductor devices

    DOE Patents [OSTI]

    Grimmer, Derrick P. (White Bear Lake, MN); Paulson, Kenneth R. (North St. Paul, MN); Gilbert, James R. (St. Paul, MN)

    1989-10-10

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  15. Organic and Printed Electronics for Biological Microfluidic Applications

    E-Print Network [OSTI]

    Jagannathan, Lakshmi

    2012-01-01

    low-cost and flexible substrates. Printed electronics alsoflexible and plastic substrates Table 1. Comparison between conventional processing and processing using printed electronics.flexible substrates. Specifically, for biological applications, the ability of printed electronics

  16. Flexible Displays With Nanostructured Integrated Power

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Background and Motivation Impact of Fabrication process on Performance and Reliability. 3D Integration Fabrication Methods Transfer Printing Photolithography with LT Processing #12;Successful Implementation of Transfer Printing #12;#12;#12;#12;#12;#12;Second Fabrication Technology For Flexible Electronics

  17. Investigation and optimization of low-frequency noise performance in readout electronics of dc superconducting quantum interference device

    SciTech Connect (OSTI)

    Zhao, Jing; Zhang, Yi; Krause, Hans-Joachim; Lee, Yong-Ho

    2014-05-15

    We investigated and optimized the low-frequency noise characteristics of a preamplifier used for readout of direct current superconducting quantum interference devices (SQUIDs). When the SQUID output was detected directly using a room-temperature low-voltage-noise preamplifier, the low-frequency noise of a SQUID system was found to be dominated by the input current noise of the preamplifiers in case of a large dynamic resistance of the SQUID. To reduce the current noise of the preamplifier in the low-frequency range, we investigated the dependence of total preamplifier noise on the collector current and source resistance. When the collector current was decreased from 8.4 mA to 3 mA in the preamplifier made of 3 parallel SSM2220 transistor pairs, the low-frequency total voltage noise of the preamplifier (at 0.1 Hz) decreased by about 3 times for a source resistance of 30 ? whereas the white noise level remained nearly unchanged. Since the relative contribution of preamplifier's input voltage and current noise is different depending on the dynamic resistance or flux-to-voltage transfer of the SQUID, the results showed that the total noise of a SQUID system at low-frequency range can be improved significantly by optimizing the preamplifier circuit parameters, mainly the collector current in case of low-noise bipolar transistor pairs.

  18. Electronic, optical, and phononic properties of graphene, boron nitride, and related materials

    E-Print Network [OSTI]

    PARK, CHEOL HWAN

    2009-01-01

    scale electronic and spintronic device applications. On thegeneration electronic and spintronic devices. Angle-resolvedbased electronic and spintronic devices. Our results are in

  19. Reproducible strain measurement in electronic devices by applying integer multiple to scanning grating in scanning moiré fringe imaging

    SciTech Connect (OSTI)

    Kim, Suhyun, E-mail: u98kim@surface.phys.titech.ac.jp; Jung, Younheum; Kim, Joong Jung; Lee, Sunyoung; Lee, Haebum [Memory Analysis Science and Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701 (Korea, Republic of); Kondo, Yukihito [EM Business Unit, JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558 (Japan)

    2014-10-15

    Scanning moiré fringe (SMF) imaging by high-angle annular dark field scanning transmission electron microscopy was used to measure the strain field in the channel of a transistor with a CoSi{sub 2} source and drain. Nanometer-scale SMFs were formed with a scanning grating size of d{sub s} at integer multiples of the Si crystal lattice spacing d{sub l} (d{sub s} ? nd{sub l}, n = 2, 3, 4, 5). The moiré fringe formula was modified to establish a method for quantifying strain measurement. We showed that strain fields in a transistor measured by SMF images were reproducible with an accuracy of 0.02%.

  20. Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

    DOE Patents [OSTI]

    Georgiades, Nikos P. (Pasadena, CA); Polzik, Eugene S. (H.o slashed.jbjerg, DK); Kimble, H. Jeff (LaCanada, CA)

    1999-02-02

    An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100's THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 .mu.m to 1.66 .mu.m for fiber optics can be accomplished with a nearly continuous frequency coverage.

  1. Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

    DOE Patents [OSTI]

    Georgiades, N.P.; Polzik, E.S.; Kimble, H.J.

    1999-02-02

    An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies are disclosed. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100`s THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 {micro}m to 1.66 {micro}m for fiber optics can be accomplished with a nearly continuous frequency coverage. 7 figs.

  2. Roll Printed Electronics: Development and Scaling of Gravure Printing Techniques

    E-Print Network [OSTI]

    de la Fuente Vornbrock, Alejandro

    2009-01-01

    IEEE Transactions on Electronics Packaging Manufacturing,conductors for flexible electronics." s.l. : Journal of theMaterials for Optics and Electronics, 1993, Vol. 2, pp. 93-

  3. Flexibility in ballpark design

    E-Print Network [OSTI]

    Ressler, Kyle T. (Kyle Thomas)

    2014-01-01

    This thesis documents the potential value of using flexible design to implement Major League Ballparks (MLBP). Credible evidence suggests that most ballparks were designed to fixed specifications that do not facilitate ...

  4. Multimaterial rectifying device fibers

    E-Print Network [OSTI]

    Orf, Nicholas D

    2009-01-01

    Electronic and optoelectronic device processing is commonly thought to be incompatible with much simpler thermal drawing techniques used in optical fiber production. The incorporation of metals, polymer insulators, and ...

  5. Encapsulation methods for organic electrical devices

    DOE Patents [OSTI]

    Blum, Yigal D.; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijian

    2013-06-18

    The disclosure provides methods and materials suitable for use as encapsulation barriers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device encapsulated by alternating layers of a silicon-containing bonding material and a ceramic material. The encapsulation methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  6. Electron

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansas Nuclear ProfileMultiferroicAward | DepartmentElectron thermal

  7. Apparatus and method for detecting tampering in flexible structures

    DOE Patents [OSTI]

    Maxey, Lonnie C. (Knoxville, TN); Haynes, Howard D. (Knoxville, TN)

    2011-02-01

    A system for monitoring or detecting tampering in a flexible structure includes taking electrical measurements on a sensing cable coupled to the structure, performing spectral analysis on the measured data, and comparing the spectral characteristics of the event to those of known benign and/or known suspicious events. A threshold or trigger value may used to identify an event of interest and initiate data collection. Alternatively, the system may be triggered at preset intervals, triggered manually, or triggered by a signal from another sensing device such as a motion detector. The system may be used to monitor electrical cables and conduits, hoses and flexible ducts, fences and other perimeter control devices, structural cables, flexible fabrics, and other flexible structures.

  8. Magnetoelectric polymer nanocomposite for flexible electronics

    SciTech Connect (OSTI)

    Alnassar, M. Alfadhel, A.; Ivanov, Yu. P.; Kosel, J.

    2015-05-07

    This paper reports the fabrication and characterization of a new type of magnetoelectric polymer nanocomposite that exhibits excellent ferromagnetism and ferroelectricity simultaneously at room temperature. The multiferroic nanocomposite consists of high aspect ratio ferromagnetic iron nanowires embedded inside a ferroelectric co-polymer poly(vinylindene fluoride-trifluoroethylene), P(VDF-TrFE). The nanocomposite has been fabricated via a simple low temperature spin coating technique. Structural, ferromagnetic, ferroelectric, and magnetoelectric properties of the developed nanocomposite have been characterized. The nanocomposite films showed isotropic magnetic properties due to the random orientation of the iron nanowires inside the film. In addition, the embedded nanowires did not hinder the ferroelectric phase development of the nanocomposite. The developed nanocomposite showed a high magnetoelectric coupling response of 156?mV/cmOe measured at 3.1 kOe DC bias field. This value is among the highest reported magnetoelectric coupling in two phase particulate polymer nanocomposites.

  9. WE-E-18A-08: Towards a Next-Generation Electronic Portal Device for Simultaneous Imaging and Dose Verification in Radiotherapy

    SciTech Connect (OSTI)

    Blake, S; Vial, P; Holloway, L; Kuncic, Z

    2014-06-15

    Purpose: This work forms part of an ongoing study to develop a next-generation electronic portal imaging device (EPID) for simultaneous imaging and dose verification in radiotherapy. Monte Carlo (MC) simulations were used to characterize the imaging performance of a novel EPID that has previously been demonstrated to exhibit a water-equivalent response. The EPID ' s response was quantified in several configurations and model parameters were empirically validated against experimental measurements. Methods: A MC model of a novel a-Si EPID incorporating an array of plastic scintillating fibers was developed. Square BCF-99-06A scintillator fibers with PMMA cladding (Saint-Gobain Crystals) were modelled in a matrix with total area measuring 150×150 mm{sup 2}. The standard electromagnetic and optical physics Geant4 classes were used to simulate radiation transport from an angled slit source (6 MV energy spectrum) through the EPID and optical photons reaching the photodiodes were scored. The prototype's modulation transfer function (MTF) was simulated and validated against experimental measurements. Several optical transport parameters, fiber lengths and thicknesses of an air gap between the scintillator and photodiodes were investigated to quantify their effects on the prototype's detection efficiency, sensitivity and MTF. Results: Simulated EPID response was more sensitive to variations in geometry than in the optical parameters studied. The MTF was particularly sensitive to the introduction of a 0.5–1.0 mm air gap between the scintillator and photodiodes, which lowered the MTF relative to that simulated without the gap. As expected, increasing the fiber length increased the detector efficiency and sensitivity while decreasing the MTF. Conclusion: A model of a novel water-equivalent EPID has been developed and benchmarked against measurements using a physical prototype. We have demonstrated the feasibility of this new device and are continuing to optimize the design to achieve an imaging response that warrants the development of a next-generation prototype.

  10. 1006 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 5, MAY 2001 [5] B. Yu, Y.-J. Tung, S. Tang, E. Hui, T.-J. King, and C. Hu,

    E-Print Network [OSTI]

    Fu, Li Ming

    an interface trap-assisted two-step tunneling model for increased GIDL after hot-carrier stress. On the other1006 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 5, MAY 2001 [5] B. Yu, Y.-J. Tung, S. Tang of is mainly attributed to the increase of Si/SiO interface traps generated in the plasma processes

  11. Fig.1: Optical photograph of the EHD micropumps fabricated on a flexible Parylene-C substrate

    E-Print Network [OSTI]

    Dokmeci, Mehmet

    or flexible electronics is to fabricate organic field effect transistors and display panels directlyFig.1: Optical photograph of the EHD micropumps fabricated on a flexible Parylene-C substrate An Electrohydrodynamic Micropump for On-Chip Fluid Pumping on a Flexible Parylene Substrate Chia-Ling Chen1,* , Student

  12. Managing Processes on Mobile Devices: The MARPLE Approach

    E-Print Network [OSTI]

    Ulm, Universität

    Managing Processes on Mobile Devices: The MARPLE Approach R¨udiger Pryss, Julian Tiedeken process engine which enables light-weight as well as flexible process support on mobile devices. 1 in which chronically ill patients shall be assisted by mobile devices. Such mobile device gives

  13. Computation of the spectrum of spatial Lyapunov exponents for the spatially extended beam-plasma systems and electron-wave devices

    SciTech Connect (OSTI)

    Hramov, Alexander E. [Faculty of Nonlinear Processes, Saratov State University, Astrakhanskaya str., 83, Saratov 410012 (Russian Federation); Saratov State Technical University, Politechnicheskaja str., 77, Saratov 410054 (Russian Federation); Koronovskii, Alexey A.; Maximenko, Vladimir A.; Moskalenko, Olga I. [Faculty of Nonlinear Processes, Saratov State University, Astrakhanskaya str., 83, Saratov 410012 (Russian Federation)

    2012-08-15

    The spectrum of Lyapunov exponents is powerful tool for the analysis of the complex system dynamics. In the general framework of nonlinear dynamics, a number of the numerical techniques have been developed to obtain the spectrum of Lyapunov exponents for the complex temporal behavior of the systems with a few degree of freedom. Unfortunately, these methods cannot be applied directly to analysis of complex spatio-temporal dynamics of plasma devices which are characterized by the infinite phase space, since they are the spatially extended active media. In the present paper, we propose the method for the calculation of the spectrum of the spatial Lyapunov exponents (SLEs) for the spatially extended beam-plasma systems. The calculation technique is applied to the analysis of chaotic spatio-temporal oscillations in three different beam-plasma model: (1) simple plasma Pierce diode, (2) coupled Pierce diodes, and (3) electron-wave system with backward electromagnetic wave. We find an excellent agreement between the system dynamics and the behavior of the spectrum of the spatial Lyapunov exponents. Along with the proposed method, the possible problems of SLEs calculation are also discussed. It is shown that for the wide class of the spatially extended systems, the set of quantities included in the system state for SLEs calculation can be reduced using the appropriate feature of the plasma systems.

  14. Highly Flexible Self-Assembled V2O5 Cathodes Enabled by Conducting Diblock Copolymers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    An, Hyosung; Mike, Jared; Smith, Kendall A.; Swank, Lisa; Lin, Yen-Hao; L. Pesek, Stacy; Verduzco, Rafael; Lutkenhaus, Jodie L.

    2015-09-22

    Mechanically robust battery electrodes are desired for applications in wearable devices, flexible displays, and structural energy and power. In this regard, the challenge is to balance mechanical and electrochemical properties in materials that are inherently brittle. Here, we demonstrate a unique water-based self-assembly approach that incorporates a diblock copolymer bearing electron- and ion-conducting blocks, poly(3-hexylthiophene)-block-poly(ethyleneoxide) (P3HT-b-PEO), with V2O5 to form a flexible, tough, carbon-free hybrid battery cathode. V2O5 is a promising lithium intercalation material, but it remains limited by its poor conductivity and mechanical properties. Our approach leads to a unique electrode structure consisting of interlocking V2O5 layers glued togethermore »with micellar aggregates of P3HT-b-PEO, which results in robust mechanical properties, far exceeding the those obtained from conventional fluoropolymer binders. Only 5 wt % polymer is required to triple the flexibility of V2O5, and electrodes comprised of 10 wt % polymer have unusually high toughness (293 kJ/m3) and specific energy (530 Wh/kg), both higher than reduced graphene oxide paper electrodes. Furthermore, addition of P3HT-b-PEO enhances lithium-ion diffusion, eliminates cracking during cycling, and boosts cyclability relative to V2O5 alone. These results highlight the importance of tradeoffs between mechanical and electrochemical performance, where polymer content can be used to tune both aspects.« less

  15. SUPERCONDUCTING DEVICES

    E-Print Network [OSTI]

    Clarke, John

    2014-01-01

    communications. References Superconductor Applications: ~on all aspects of superconducting devices. IEEE Trans.on all aspects vf superconducting devices. The IBM Journal

  16. SECURITY FOR WIRELESS NETWORKS AND DEVICES

    E-Print Network [OSTI]

    March 2003 SECURITY FOR WIRELESS NETWORKS AND DEVICES Shirley Radack, Editor, Computer Security to use. Users of wireless local area network (WLAN) devices have flexibility to move their laptop com costs. While wireless networks are exposed to many of the same risks as wired net works

  17. Acoustic enhancement for photo detecting devices

    DOE Patents [OSTI]

    Thundat, Thomas G; Senesac, Lawrence R; Van Neste, Charles W

    2013-02-19

    Provided are improvements to photo detecting devices and methods for enhancing the sensitivity of photo detecting devices. A photo detecting device generates an electronic signal in response to a received light pulse. An electro-mechanical acoustic resonator, electrically coupled to the photo detecting device, damps the electronic signal and increases the signal noise ratio (SNR) of the electronic signal. Increased photo detector standoff distances and sensitivities will result.

  18. Flexible and Transparent Memory

    E-Print Network [OSTI]

    KIM, SUNG MIN

    2012-01-01

    tunneling oxide permits electrons (holes) from the graphene to be injected into the HfO x charge trap

  19. SU-E-T-145: Effects of Temporary Tachytherapy Inhibition Magnet On MOSFET Dose Measurements of Cardiovascular Implantable Electronic Devices (CIED) in Radiation Therapy Patients

    SciTech Connect (OSTI)

    P, Joshi; Salomons, G; Kerr, A; Peters, C; Lalonde, M

    2014-06-01

    Purpose: To determine the effects of temporary tachytherapy inhibition magnet on MOSFET dose measurements of cardiovascular implantable electronic devices (CIED) in radiation therapy patients. Methods: Infield and peripheral MOSFET dose measurements with 6MV photon beams were performed to evaluate dose to a CIED in the presence of a doughnut shaped temporary tachytherapy inhibition magnet. Infield measurements were done to quantify the effects of the magnetic field alone and shielding by the magnet. MOSFETs were placed inside a 20×20cm{sup 2} field at a depth of 3cm in the isocentre plane in the presence and absence of the magnet. Peripheral dose measurements were done to determine the impact of the magnet on dose to the CIED in a clinical setting. These measurements were performed at the centre, under the rim and half way between a 10×10cm{sup 2} field edge and the magnet with MOSFETS placed at the surface, 0.5cm and 1cm depths in the presence and absence of the magnet. Results: Infield measurements showed that effects of magnetic field on the MOSFET readings were within the 2% MOSFET dose measurement uncertainty; a 20% attenuation of dose under the magnet rim was observed. Peripheral dose measurements at the centre of the magnet show an 8% increase in surface dose and a 6% decrease in dose at 1cm depth. Dose under the magnet rim was reduced by approximately 68%, 45% and 25% for MOSFET placed at 0.0, 0.5 and 1.0cm bolus depths, respectively. Conclusions: The magnetic field has an insignificant effect on MOSFET dose measurements. Dose to the central region of CIED represented by centre of the magnet doughnut increases at the surface, and decreases at depths due to low energy scattering contributions from the magnet. Dose under the magnet rim, representing CIED edges, decreased significantly due to shielding.

  20. Flexible cryogenic conduit

    DOE Patents [OSTI]

    Brindza, Paul Daniel (Yorktown, VA); Wines, Robin Renee (Norfolk, VA); Takacs, James Joseph (Hayes, VA)

    1999-01-01

    A flexible and relatively low cost cryogenic conduit is described. The flexible cryogenic conduit of the present invention comprises a first inner corrugated tube with single braided serving, a second outer corrugated tube with single braided serving concentric with the inner corrugated tube, and arranged outwardly about the periphery of the inner corrugated tube and between the inner and outer corrugated tubes: a superinsulation layer; a one half lap layer of polyester ribbon; a one half lap layer of copper ribbon; a spirally wound refrigeration tube; a second one half lap layer of copper ribbon; a second one half lap layer of polyester ribbon; a second superinsulation layer; a third one half lap layer of polyester ribbon; and a spirally wound stretchable and compressible filament.

  1. Industrial Fuel Flexibility Workshop

    SciTech Connect (OSTI)

    none,

    2006-09-01

    On September 28, 2006, in Washington, DC, ITP and Booz Allen Hamilton conducted a fuel flexibility workshop with attendance from various stakeholder groups. Workshop participants included representatives from the petrochemical, refining, food and beverage, steel and metals, pulp and paper, cement and glass manufacturing industries; as well as representatives from industrial boiler manufacturers, technology providers, energy and waste service providers, the federal government and national laboratories, and developers and financiers.

  2. Toward the Development of Printable Nanowire Electronics and Sensors

    E-Print Network [OSTI]

    Javey, Ali

    -performance flexible electronics have been demon- strated.[44­47] In one approach, microstructured inorganic flexible electronics. In another notable approach, semiconductor nanowires (NWs) have been proposed and demonstrated as versatile building blocks for flexible electronics, involving the chemical vapor deposition

  3. Theoretical and experimental study of the bending influence on the capacitance of interdigitated micro-electrodes patterned on flexible substrates

    SciTech Connect (OSTI)

    Molina-Lopez, F.; Briand, D.; Rooij, N. F. de [Ecole Polytechnique Fédérale de Lausanne (EPFL) - Institute of Microengineering (IMT) – Sensors, Actuators and Microsystems Laboratory - SAMLAB, 2002 Neuchâtel (Switzerland); Kinkeldei, T.; Tröster, G. [Eidgenössische Technische Hochschule Zürich (ETHZ) – Electronics Laboratory, 8092 Zurich (Switzerland)

    2013-11-07

    Interdigitated electrodes are common structures in the fields of microelectronics and MEMS. Recent developments in flexible electronics compel an understanding of such structures under bending constraints. In this work, the behavior of interdigitated micro-electrodes when subjected to circular bending has been theoretically and experimentally studied through changes in capacitance. An analytical model has been developed to calculate the expected variation in capacitance of such structures while undergoing outward and inward bending along the direction perpendicular to the electrodes. The model combines conformal mapping techniques to account for the electric field redistribution and fundamental aspects of solid mechanics in order to define the geometrical deformation of the electrodes while bending. To experimentally verify our theoretical predictions, several interdigitated electrode structures with different geometries were fabricated on polymeric substrates by means of photolithography. The samples, placed in a customized bending setup, were bent to controlled radii of curvature while measuring their capacitance. A maximum variation in capacitance of less than 3% was observed at a minimum radius of curvature of 2.5?mm for all the devices tested with very thin electrodes whereas changes of up to 7% were found on stiffer, plated electrodes. Larger or smaller variations would be possible, in theory, by adjusting the geometry of the device. This work establishes a useful predictive tool for the design and evaluation of truly flexible/bendable electronics consisting of interdigitated structures, allowing one to tune the bending influence on the capacitance value through geometrical design.

  4. A Wireless Bladder Volume Monitoring System Using a Flexible Capacitance-based Sensor

    E-Print Network [OSTI]

    Chiao, Jung-Chih

    -based sensor was laser-micromachined from a polyimide film to form an interdigitated finger structure, followed to flexible polyimide to enhance sensor elasticity and longevity. The device size was reduced so that it could polyimide

  5. Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates

    E-Print Network [OSTI]

    Rogers, John A.

    Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic February 2005; published online 23 March 2005 Free-standing micro/nanoelements of single-crystal silicon-temperature device substrates, such as plastic, for high-performance mechanically flexible thin-film transistors TFTs

  6. Bending tests of carbon nanotube thin-film transistors on flexible Daniel Pham1

    E-Print Network [OSTI]

    Chen, Ray

    Bending tests of carbon nanotube thin-film transistors on flexible substrate Daniel Pham1 , Harish, San Marcos, TX 78666. ABSTRACT Bending tests of carbon nanotube thin-film transistors on flexible substrate have been characterized in this paper. The device channel consisting of dense, aligned, 99% pure

  7. Micro environmental sensing device

    DOE Patents [OSTI]

    Polosky, Marc A. (Tijeras, NM); Lukens, Laurance L. (Tijeras, NM)

    2006-05-02

    A microelectromechanical (MEM) acceleration switch is disclosed which includes a proof mass flexibly connected to a substrate, with the proof mass being moveable in a direction substantially perpendicular to the substrate in response to a sensed acceleration. An electrode on the proof mass contacts one or more electrodes located below the proof mass to provide a switch closure in response to the sensed acceleration. Electrical latching of the switch in the closed position is possible with an optional latching electrode. The MEM acceleration switch, which has applications for use as an environmental sensing device, can be fabricated using micromachining.

  8. ITP Chemicals: Industrial Feedstock Flexibility Workshop Results...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Industrial Feedstock Flexibility Workshop Results, December 2009 ITP Chemicals: Industrial Feedstock Flexibility Workshop Results, December 2009 feedstockworkshopreport.pdf More...

  9. Diversity & Flexibility Key to Sustainability | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Diversity & Flexibility Key to Sustainability Diversity & Flexibility Key to Sustainability Plenary V: Biofuels and Sustainability: Acknowledging Challenges and Confronting...

  10. 6.012 Microelectronic Devices and Circuits, Spring 2003

    E-Print Network [OSTI]

    Del Alamo, Jesus

    Modeling of microelectronic devices, and basic microelectronic circuit analysis and design. Physical electronics of semiconductor junction and MOS devices. Relation of electrical behavior to internal physical processes; ...

  11. Rotating flexible drag mill

    DOE Patents [OSTI]

    Pepper, W.B.

    1984-05-09

    A rotating parachute for decelerating objects travelling through atmosphere at subsonic or supersonic deployment speeds includes a circular canopy having a plurality of circumferentially arranged flexible panels projecting radially from a solid central disk. A slot extends radially between adjacent panels to the outer periphery of the canopy. Upon deployment, the solid disk diverts air radially to rapidly inflate the panels into a position of maximum diameter. Air impinging on the panels adjacent the panel slots rotates the parachute during its descent. Centrifugal force flattens the canopy into a constant maximum diameter during terminal descent for maximum drag and deceleration.

  12. Flexible composite radiation detector

    DOE Patents [OSTI]

    Cooke, D. Wayne (Santa Fe, NM); Bennett, Bryan L. (Los Alamos, NM); Muenchausen, Ross E. (Los Alamos, NM); Wrobleski, Debra A. (Los Alamos, NM); Orler, Edward B. (Los Alamos, NM)

    2006-12-05

    A flexible composite scintillator was prepared by mixing fast, bright, dense rare-earth doped powdered oxyorthosilicate (such as LSO:Ce, LSO:Sm, and GSO:Ce) scintillator with a polymer binder. The binder is transparent to the scintillator emission. The composite is seamless and can be made large and in a wide variety of shapes. Importantly, the composite can be tailored to emit light in a spectral region that matches the optimum response of photomultipliers (about 400 nanometers) or photodiodes (about 600 nanometers), which maximizes the overall detector efficiency.

  13. Flexible hydropower: boosting energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFES OctoberEvanServices »First ObservationFast FactsEMC2Flexible

  14. Fast transit portal dosimetry using density-scaled layer modeling of aSi-based electronic portal imaging device and Monte Carlo method

    SciTech Connect (OSTI)

    Jung, Jae Won; Kim, Jong Oh; Yeo, Inhwan Jason; Cho, Young-Bin; Kim, Sun Mo; DiBiase, Steven

    2012-12-15

    Purpose: Fast and accurate transit portal dosimetry was investigated by developing a density-scaled layer model of electronic portal imaging device (EPID) and applying it to a clinical environment. Methods: The model was developed for fast Monte Carlo dose calculation. The model was validated through comparison with measurements of dose on EPID using first open beams of varying field sizes under a 20-cm-thick flat phantom. After this basic validation, the model was further tested by applying it to transit dosimetry and dose reconstruction that employed our predetermined dose-response-based algorithm developed earlier. The application employed clinical intensity-modulated beams irradiated on a Rando phantom. The clinical beams were obtained through planning on pelvic regions of the Rando phantom simulating prostate and large pelvis intensity modulated radiation therapy. To enhance agreement between calculations and measurements of dose near penumbral regions, convolution conversion of acquired EPID images was alternatively used. In addition, thickness-dependent image-to-dose calibration factors were generated through measurements of image and calculations of dose in EPID through flat phantoms of various thicknesses. The factors were used to convert acquired images in EPID into dose. Results: For open beam measurements, the model showed agreement with measurements in dose difference better than 2% across open fields. For tests with a Rando phantom, the transit dosimetry measurements were compared with forwardly calculated doses in EPID showing gamma pass rates between 90.8% and 98.8% given 4.5 mm distance-to-agreement (DTA) and 3% dose difference (DD) for all individual beams tried in this study. The reconstructed dose in the phantom was compared with forwardly calculated doses showing pass rates between 93.3% and 100% in isocentric perpendicular planes to the beam direction given 3 mm DTA and 3% DD for all beams. On isocentric axial planes, the pass rates varied between 95.8% and 99.9% for all individual beams and they were 98.2% and 99.9% for the composite beams of the small and large pelvis cases, respectively. Three-dimensional gamma pass rates were 99.0% and 96.4% for the small and large pelvis cases, respectively. Conclusions: The layer model of EPID built for Monte Carlo calculations offered fast (less than 1 min) and accurate calculation for transit dosimety and dose reconstruction.

  15. Daydreaming Devices

    E-Print Network [OSTI]

    Da Ponte, Ana Sofia Lopes

    2008-01-01

    Daydreaming Devices is a project on aspects of daydream and the design of convertible furniture within the context of art. This thesis addresses the concepts and the design of two daydreaming devices developed during my ...

  16. Support and maneuvering device

    DOE Patents [OSTI]

    Wood, R.L.

    1987-03-23

    A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof. 9 figs.

  17. Flexible ocean upwelling pipe

    DOE Patents [OSTI]

    Person, Abraham (Los Alamitos, CA)

    1980-01-01

    In an ocean thermal energy conversion facility, a cold water riser pipe is releasably supported at its upper end by the hull of the floating facility. The pipe is substantially vertical and has its lower end far below the hull above the ocean floor. The pipe is defined essentially entirely of a material which has a modulus of elasticity substantially less than that of steel, e.g., high density polyethylene, so that the pipe is flexible and compliant to rather than resistant to applied bending moments. The position of the lower end of the pipe relative to the hull is stabilized by a weight suspended below the lower end of the pipe on a flexible line. The pipe, apart from the weight, is positively buoyant. If support of the upper end of the pipe is released, the pipe sinks to the ocean floor, but is not damaged as the length of the line between the pipe and the weight is sufficient to allow the buoyant pipe to come to a stop within the line length after the weight contacts the ocean floor, and thereafter to float submerged above the ocean floor while moored to the ocean floor by the weight. The upper end of the pipe, while supported by the hull, communicates to a sump in the hull in which the water level is maintained below the ambient water level. The sump volume is sufficient to keep the pipe full during heaving of the hull, thereby preventing collapse of the pipe.

  18. Flexible semi-transparent organic spin valve based on bathocuproine

    SciTech Connect (OSTI)

    Sun, Xiangnan; Bedoya-Pinto, Amilcar; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-08-25

    Organic semiconductors are attractive materials for advanced spintronic applications due to their long spin lifetimes and, simultaneously, their mechanical flexibility. With the aim of combining these advantages in a single device, we report on the fabrication and properties of a mechanically flexible bathocuproine-based spin valve. This organic spin device shows great stability on both electrical and magneto-transport properties upon mechanical bending at different radius (up to r?=?5?mm), while featuring long-lasting endurance (on bending over 50 times). The room-temperature magnetoresistance ratio reaches up to 3.5%, and is notably preserved under air atmosphere. The observation of spin transport at room-temperature, combined with the outstanding mechanical properties and air stability, highlights the potential of bathocuproine-based spin devices towards applications.

  19. Microfabricated Systems for Electron Microscopy of Nanoscale Processes: In-situ TEM Creation of Si Nanowire Devices and in-situ SEM Electrochemistry

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    Nanowire Devices and in-situ SEM Electrochemistry K Mølhave1 , C. Kallesøe1 , C Y Wen2 , F M Ross3 of the nanosystem. In-situ SEM electrochemistry To study processes in liquids at ambient conditions, we

  20. 196 IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 2, FEBRUARY 2013 High-Speed E-Mode InAs QW MOSFETs With

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    -frequency and logic performance. These devices feature a 3-nm Al2O3 layer grown by atomic layer deposition Identifier 10.1109/LED.2012.2229107 atomic layer deposition (ALD) has been dramatically im- proved [5

  1. Industrial Feedstock Flexibility Workshop Results

    SciTech Connect (OSTI)

    Ozokwelu, Dickson; Margolis, Nancy; Justiniano, Mauricio; Monfort, Joe; Brueske, Sabine; Sabouni, Ridah

    2009-08-01

    This report (PDF 649 KB) summarizes the results of the 2009 Industrial Feedstock Flexibility Workshop, which took place in Atlanta, GA on August 19-20, 2009.

  2. Flexible Energy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Opens in new window) Flexible Fuel Solutions Offer Efficient, Reliable Energy The world of power generation is evolving at lightning speed. GE is focused on staying one step...

  3. Thermoplastic tape compaction device

    DOE Patents [OSTI]

    Campbell, V.W.

    1994-12-27

    A device is disclosed for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite. 5 figures.

  4. Thermoplastic tape compaction device

    DOE Patents [OSTI]

    Campbell, Vincent W. (Oak Ridge, TN)

    1994-01-01

    A device for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite.

  5. 8 June 2015 James Urquhart Injectable electronics unfold to monitor brain activity

    E-Print Network [OSTI]

    Xie, Xiaoliang Sunney

    Research Group, Harvard University Flexible electronics have been created that unfold once injected surrounding tissue. Flexible electronics have been incorporated into both living and non-living 3D structures electronics. Furthermore, the mechanical mismatch between traditional thin film flexible electronics

  6. Damped flexible seal

    DOE Patents [OSTI]

    DuBois, Neil J. (Cranston, RI); Amaral, Antonio M. (Barrington, RI)

    1992-10-27

    A damped flexible seal assembly for a torpedo isolates the tailcone thereof rom vibrational energy present in the drive shaft assembly. A pair of outside flanges, each of which include an inwardly facing groove and an O-ring constrained therein, provide a watertight seal against the outer non-rotating surface of the drive shaft assembly. An inside flange includes an outwardly-facing groove and an O-ring constrained therein, and provides a watertight seal against the inner surface of the tail cone. Two cast-in-place elastomeric seals provide a watertight seal between the flanges and further provide a damping barrier between the outside flanges and the inside flanges for damping vibrational energy present in the drive shaft assembly before the energy can reach the tailcone through the seal assembly.

  7. Flexible cloth seal assembly

    DOE Patents [OSTI]

    Bagepalli, B.S.; Taura, J.C.; Aksit, M.F.; Demiroglu, M.; Predmore, D.R.

    1999-06-29

    A seal assembly is described having a flexible cloth seal which includes a shim assemblage surrounded by a cloth assemblage. A first tubular end portion, such as a gas turbine combustor, includes a longitudinal axis and has smooth and spaced-apart first and second surface portions defining a notch there between which is wider at its top than at its bottom and which extends outward from the axis. The second surface portion is outside curved, and a first edge of the cloth seal is positioned in the bottom of the notch. A second tubular end portion, such as a first stage nozzle, is located near, spaced apart from, and coaxially aligned with, the first tubular end portion. The second tubular end portion has a smooth third surface portion which surrounds at least a portion of the first tubular end portion and which is contacted by the cloth seal. 7 figs.

  8. DOI: 10.1002/adem.201200169 In Situ Electro-Mechanical Experiments and Mechanics

    E-Print Network [OSTI]

    Li, Teng

    in flexible electronics. Flexible devices are often subject to repeated large deformation. While compliant solution to durable transparent electrodes for flexible electronics. The multilayer structural design performance permeation barriers for flexible electronics. While flexible electronics is being developed toward

  9. Integration of indium phosphide based devices with flexible substrates

    E-Print Network [OSTI]

    Chen, Wayne Huai

    2011-01-01

    et al. , "Patterning, electroplating and removal of SU-8D. Sood. “Patterning, electroplating and removal of SU-8

  10. New tools, like a flexible suturing device, have made endoscopically-

    E-Print Network [OSTI]

    Ford, James

    to freeze them in a technique called cryotherapy. She followed that a few weeks later with ra- diofrequency what would have happened if it hadn't been for that piece of meat get- ting stuck." Having a place like

  11. Passive hybrid sensing tag with flexible substrate saw device

    DOE Patents [OSTI]

    Skinner, Jack L.; Chu, Eric Y.; Ho, Harvey

    2012-12-25

    The integration of surface acoustic wave (SAW) filters, microfabricated transmission lines, and sensors onto polymer substrates in order to enable a passive wireless sensor platform is described herein. Incident microwave pulses on an integrated antenna are converted to an acoustic wave via a SAW filter and transmitted to an impedance based sensor, which for this work is a photodiode. Changes in the sensor state induce a corresponding change in the impedance of the sensor resulting in a reflectance profile. Data collected at a calibrated receiver is used to infer the state of the sensor. Based on this principal, light levels were passively and wirelessly demonstrated to be sensed at distances of up to about 12 feet.

  12. 14%-efficient flexible CdTe solar cells on ultra-thin glass substrates

    SciTech Connect (OSTI)

    Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Meysing, D. M.; Wolden, C. A. [Colorado School of Mines, Golden, Colorado 80401 (United States); Garner, S.; Cimo, P. [Corning Incorporated, Corning, New York 14831 (United States)

    2014-04-07

    Flexible glass enables high-temperature, roll-to-roll processing of superstrate devices with higher photocurrents than flexible polymer foils because of its higher optical transmission. Using flexible glass in our high-temperature CdTe process, we achieved a certified record conversion efficiency of 14.05% for a flexible CdTe solar cell. Little has been reported on the flexibility of CdTe devices, so we investigated the effects of three different static bending conditions on device performance. We observed a consistent trend of increased short-circuit current and fill factor, whereas the open-circuit voltage consistently dropped. The quantum efficiency under the same static bend condition showed no change in the response. After storage in a flexed state for 24 h, there was very little change in device efficiency relative to its unflexed state. This indicates that flexible glass is a suitable replacement for rigid glass substrates, and that CdTe solar cells can tolerate bending without a decrease in device performance.

  13. Guide wire extension for shape memory polymer occlusion removal devices

    SciTech Connect (OSTI)

    Maitland, Duncan J.; Small, IV, Ward; Hartman, Jonathan

    2009-11-03

    A flexible extension for a shape memory polymer occlusion removal device. A shape memory polymer instrument is transported through a vessel via a catheter. A flexible elongated unit is operatively connected to the distal end of the shape memory polymer instrument to enhance maneuverability through tortuous paths en route to the occlusion.

  14. Encapsulation methods and dielectric layers for organic electrical devices

    DOE Patents [OSTI]

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  15. Controlling Graphene's Electronic Structure

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    semiconductor devices at low temperatures and high magnetic fields). Among its novel properties, graphene's electrical charge carriers (electrons and holes) move through a solid...

  16. Sealing device

    DOE Patents [OSTI]

    Garcia-Crespo, Andres Jose

    2013-12-10

    A sealing device for sealing a gap between a dovetail of a bucket assembly and a rotor wheel is disclosed. The sealing device includes a cover plate configured to cover the gap and a retention member protruding from the cover plate and configured to engage the dovetail. The sealing device provides a seal against the gap when the bucket assemply is subjected to a centrifugal force.

  17. Radiography Device

    Broader source: Energy.gov [DOE]

    This scenario provides the planning instructions, guidance, and evaluation forms necessary to conduct an exercise involving a highway shipment of a radiography device (Class 7 - Radioactive). This...

  18. IEEE ELECTRON DEVICE LETTERS, VOL. 19, NO. 12, DECEMBER 1998 475 Flicker Noise in GaN/Al Ga N Doped

    E-Print Network [OSTI]

    =f1=f1=f noise, is the dominant limiting noise of these devices; and the Hooge parameter is on the order of 1005 01004. The gate voltage dependence of 1=f1=f1=f noise was observed in the linear region-ARO (Dr. J. Harvey) and UC MICRO programs. The authors are with the Electrical Engineering Department

  19. 1322 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 7, JULY 2001 Improved A-Si:H TFT Pixel Electrode Circuits for

    E-Print Network [OSTI]

    Kanicki, Jerzy

    with the organic light-emitting device (OLED) having an external quantum efficiency of 1%. These pixel elec- trode circuits can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs). I techniques for the organic light-emitting displays (OLEDs) [1]­[4]. AM-OLED driving schemes based on one thin

  20. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 52, NO. 6, JUNE 2005 1123 A Novel Current-Scaling a-Si:H TFTs Pixel

    E-Print Network [OSTI]

    Kanicki, Jerzy

    -matrix organic light-emitting dis- plays (AM-OLEDs). In contrast to the conventional current mirror pixel electrode circuit, in this circuit a high data-to-organic light-emitting device (OLED) current ratio can--Active-matrix, active-matrix organic light-emit- ting displays (AM-OLEDs), current driving, current scaling, light

  1. Rigid versus Flexible Ligands on Carbon Nanotubes for the Enhanced Sensitivity of Cobalt Ions

    SciTech Connect (OSTI)

    Gou, Pingping; Kraut, Nadine D.; Feigel, Ian Matthew; Star, Alexander

    2013-02-26

    Carbon nanotubes have shown great promise in the fabrication of ultra-compact and highly sensitive chemical and biological sensors. Additional chemical functionalization schemes can controllably improve selectivity of the carbon nanotube-based sensors; however the exact transduction mechanism is still under debate. In this article we detail the synthesis and selective response of single-walled carbon nanotubes (SWNTs) functionalized with polyazomethine (PAM) polymer towards the application of a specific trace metal ion detector. The response of the polymer system was compared to shape persistent macrocycle (MAC) comprised of identical ion coordination ligands. While ion detection with rigid MAC/SWNT chemiresistor was comparable to bare SWNT, flexible PAM offers significant SWNT signal amplification, allowing for picomolar detection of Co{sup 2+} ions with both selectivity and a fast response. We hypothesized that rearrangement of the flexible PAM on the SWNT network is a sensing mechanism which allows for ultrasensitive detection of metal ions. The electron transfer and polymer rearrangement on the SWNT was studied by a combination of optical spectroscopy and electrical measurements ? ultimately allowing for a better understanding of fundamental mechanisms that prompt device response.

  2. Hyperpolarizable compounds and devices fabricated therefrom

    DOE Patents [OSTI]

    Therien, Michael J. (Philadelphia, PA); DiMagno, Stephen G. (Lincoln, NE)

    1998-01-01

    Substituted compounds having relatively large molecular first order hyperpolarizabilities are provided, along with devices and materials containing them. In general, the compounds bear electron-donating and electron-withdrawing chemical substituents on a polyheterocyclic core.

  3. Hyperpolarizable compounds and devices fabricated therefrom

    DOE Patents [OSTI]

    Therien, M.J.; DiMagno, S.G.

    1998-07-21

    Substituted compounds having relatively large molecular first order hyperpolarizabilities are provided, along with devices and materials containing them. In general, the compounds bear electron-donating and electron-withdrawing chemical substituents on a polyheterocyclic core. 13 figs.

  4. Electrochromic devices

    DOE Patents [OSTI]

    Allemand, Pierre M. (Tucson, AZ); Grimes, Randall F. (Ann Arbor, MI); Ingle, Andrew R. (Tucson, AZ); Cronin, John P. (Tucson, AZ); Kennedy, Steve R. (Tuscon, AZ); Agrawal, Anoop (Tucson, AZ); Boulton, Jonathan M. (Tucson, AZ)

    2001-01-01

    An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

  5. Flexible high-temperature pH probe

    DOE Patents [OSTI]

    Bielawski, John C. (Scotia, NY); Outwater, John O. (Cambridge, MA); Halbfinger, George P. (Schenectady, NY)

    2003-04-22

    A flexible pH probe device is provided for use in hot water and other high temperature environments up to about 590.degree. F. The pH probe includes a flexible, inert tubular probe member, an oxygen anion conducting, solid state electrolyte plug located at the distal end of the tubular member, oxide powder disposed at the distal end of the tubular member; a metal wire extending along the tubular member and having a distal end in contact with the oxide powder so as to form therewith an internal reference electrode; and a compression fitting forming a pressure boundary seal around a portion of the tubular member remote from the distal end thereof. Preferably, the tubular member is made of polytetrafluoroethylene, and the solid state electrolyte plug is made of stabilized zirconia. The flexibility of the probe member enables placement of the electrode into the area of interest, including around corners, into confined areas and the like.

  6. CIGS Solar Cell on Flexible Stainless Steel Substrate Fabricated by Sputtering Method: Simulation and Experimental Results

    E-Print Network [OSTI]

    Kanicki, Jerzy

    CIGS Solar Cell on Flexible Stainless Steel Substrate Fabricated by Sputtering Method: Simulation-electronic properties of the Cu(InGa)Se2(CIGS) solar cell fabricated by sputtering method on stainless steel substrate are consistent with each other. 1. Introduction Flexible Cu In Ga Se (CIGS) solar cells are very attractive

  7. Electrostatic Operation and Curvature Modeling for a MEMS Flexible Film Actuator

    E-Print Network [OSTI]

    Electrostatic Operation and Curvature Modeling for a MEMS Flexible Film Actuator B. Edmonds, Jr.1 Introduction and Motivation The electrostatic flexible film actuator, also known as an "Artificial Eyelid," is a unique MEMS (MicroElectronic Mechanical System) actuator fabricated from polyimide and thin metal films

  8. Mechanics of thin-film transistors and solar cells on flexible substrates

    E-Print Network [OSTI]

    Suo, Zhigang

    Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova a,*, I be minimized throughout the fab- rication process. Amorphous silicon thin-film transistors and solar cells rights reserved. Keywords: Amorphous silicon; Thin-film transistor; Solar cell; Flexible electronics 1

  9. Implantable biomedical devices on bioresorbable substrates

    DOE Patents [OSTI]

    Rogers, John A; Kim, Dae-Hyeong; Omenetto, Fiorenzo; Kaplan, David L; Litt, Brian; Viventi, Jonathan; Huang, Yonggang; Amsden, Jason

    2014-03-04

    Provided herein are implantable biomedical devices, methods of administering implantable biomedical devices, methods of making implantable biomedical devices, and methods of using implantable biomedical devices to actuate a target tissue or sense a parameter associated with the target tissue in a biological environment. Each implantable biomedical device comprises a bioresorbable substrate, an electronic device having a plurality of inorganic semiconductor components supported by the bioresorbable substrate, and a barrier layer encapsulating at least a portion of the inorganic semiconductor components. Upon contact with a biological environment the bioresorbable substrate is at least partially resorbed, thereby establishing conformal contact between the implantable biomedical device and the target tissue in the biological environment.

  10. Organic Photonics and Electronics The Center for Organic Photonics and Electronics (COPE) was founded at the Georgia Institute

    E-Print Network [OSTI]

    Nair, Sankar

    years. The ability to produce lower-cost, flexible, and eco-friendly electronic applications with the potential for flexible electronics applications · Novel nanolithography techniques with the potentialOrganic Photonics and Electronics The Center for Organic Photonics and Electronics (COPE

  11. Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

    DOE Patents [OSTI]

    Rogers, John A; Cao, Qing; Alam, Muhammad; Pimparkar, Ninad

    2015-02-03

    The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

  12. Solid flexible electrochemical supercapacitor using Tobacco mosaic...

    Office of Scientific and Technical Information (OSTI)

    Solid flexible electrochemical supercapacitor using Tobacco mosaic virus nanostructures and ALD ruthenium oxide Citation Details In-Document Search Title: Solid flexible...

  13. Metamaterial flexible sheets could transform optics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Metamaterial flexible sheets could transform optics Metamaterial flexible sheets could transform optics Advances would boost security screening systems, infrared thermal cameras,...

  14. Release strategies for making transferable semiconductor structures, devices and device components

    DOE Patents [OSTI]

    Rogers, John A. (Champaign, IL); Nuzzo, Ralph G. (Champaign, IL); Meitl, Matthew (Raleigh, NC); Ko, Heung Cho (Urbana, IL); Yoon, Jongseung (Urbana, IL); Menard, Etienne (Durham, NC); Baca, Alfred J. (Urbana, IL)

    2011-04-26

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  15. Release strategies for making transferable semiconductor structures, devices and device components

    DOE Patents [OSTI]

    Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

    2014-11-25

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  16. Examination system utilizing ionizing radiation and a flexible, miniature radiation detector probe

    DOE Patents [OSTI]

    Majewski, S.; Kross, B.J.; Zorn, C.J.; Majewski, L.A.

    1996-10-22

    An optimized examination system and method based on the Reverse Geometry X-Ray{trademark} (RGX{trademark}) radiography technique are presented. The examination system comprises a radiation source, at least one flexible, miniature radiation detector probe positioned in appropriate proximity to the object to be examined and to the radiation source with the object located between the source and the probe, a photodetector device attachable to an end of the miniature radiation probe, and a control unit integrated with a display device connected to the photodetector device. The miniature radiation detector probe comprises a scintillation element, a flexible light guide having a first end optically coupled to the scintillation element and having a second end attachable to the photodetector device, and an opaque, environmentally-resistant sheath surrounding the flexible light guide. The probe may be portable and insertable, or may be fixed in place within the object to be examined. An enclosed, flexible, liquid light guide is also presented, which comprises a thin-walled flexible tube, a liquid, preferably mineral oil, contained within the tube, a scintillation element located at a first end of the tube, closures located at both ends of the tube, and an opaque, environmentally-resistant sheath surrounding the flexible tube. The examination system and method have applications in non-destructive material testing for voids, cracks, and corrosion, and may be used in areas containing hazardous materials. In addition, the system and method have applications for medical and dental imaging. 5 figs.

  17. Examination system utilizing ionizing radiation and a flexible, miniature radiation detector probe

    DOE Patents [OSTI]

    Majewski, Stanislaw (Grafton, VA); Kross, Brian J. (Yorktown, VA); Zorn, Carl J. (Yorktown, VA); Majewski, Lukasz A. (Grafton, VA)

    1996-01-01

    An optimized examination system and method based on the Reverse Geometry X-Ray.RTM. (RGX.RTM.) radiography technique are presented. The examination system comprises a radiation source, at least one flexible, miniature radiation detector probe positioned in appropriate proximity to the object to be examined and to the radiation source with the object located between the source and the probe, a photodetector device attachable to an end of the miniature radiation probe, and a control unit integrated with a display device connected to the photodetector device. The miniature radiation detector probe comprises a scintillation element, a flexible light guide having a first end optically coupled to the scintillation element and having a second end attachable to the photodetector device, and an opaque, environmentally-resistant sheath surrounding the flexible light guide. The probe may be portable and insertable, or may be fixed in place within the object to be examined. An enclosed, flexible, liquid light guide is also presented, which comprises a thin-walled flexible tube, a liquid, preferably mineral oil, contained within the tube, a scintillation element located at a first end of the tube, closures located at both ends of the tube, and an opaque, environmentally-resistant sheath surrounding the flexible tube. The examination system and method have applications in non-destructive material testing for voids, cracks, and corrosion, and may be used in areas containing hazardous materials. In addition, the system and method have applications for medical and dental imaging.

  18. Photocatalytic reactor with flexible supports

    DOE Patents [OSTI]

    Jacoby, W.A.; Blake, D.M.

    1995-09-12

    Organic pollutants and bioaerosols in a gaseous stream are oxidized by exposure to light (e.g., UV light) in the presence of semiconductor catalyst particles or coatings supported on flexible strips suspended in the gaseous stream. 3 figs.

  19. Managerial perceptions of operational flexibility 

    E-Print Network [OSTI]

    Wu, Yanzhen

    2006-08-16

    . Few descriptions of managerial real options practice exist as a basis for improvement. To address this need the current research has experiment subjects manage a simple but uncertain installation project with managerial flexibility. Subjects repeatedly...

  20. Microfluidic Brain Slice Chambers and Flexible Microelectrode Arrays for in vitro Localized Stimulation and Spatial Mapping of Neural Activities

    E-Print Network [OSTI]

    Tang, Yujie

    2012-01-01

    device and fMEA. 78 Figure 5.5:signal coincides with fMEA signal. 82 Figure 5.7: Slow5.2.1 Planar Flexible MEA (fMEA) Design and Fabrication The

  1. Electrochromic optical switching device

    DOE Patents [OSTI]

    Lampert, Carl M. (El Sobrante, CA); Visco, Steven J. (Berkeley, CA)

    1992-01-01

    An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source.

  2. Electrochromic optical switching device

    DOE Patents [OSTI]

    Lampert, C.M.; Visco, S.J.

    1992-08-25

    An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source. 3 figs.

  3. Organic electrophosphorescence device having interfacial layers

    DOE Patents [OSTI]

    Choulis, Stelios A. (San Jose, CA); Mathai, Mathew (Santa Clara, CA); Choong, Vi-En (San Jose, CA); So, Franky (Gainesville, FL)

    2010-08-10

    Techniques are described for forming an organic light emitting diode device with improved device efficiency. Materials having at least one energy level that is similar to those of a phosphorescent light emitting material in the diode are incorporated into the device to directly inject holes or electrons to the light emitting material.

  4. Glass ceramics for explosive device headers

    SciTech Connect (OSTI)

    Ballard, C. P.; Eagan, R. J.; Kjeldgaard, E. A.

    1980-01-01

    The desired features of a header for our advanced explosive devices include small size; 700 Mpa static burst strength; corrosion resistant alloys for electrodes, bridgewire, and housing; integral charge holder; high thermal conductivity (approaching that of alumina ceramic); no braze around the electrodes; design flexibility and quick turnaround time for fabrication of development prototypes; and low cost.

  5. Organic photosensitive devices

    DOE Patents [OSTI]

    Peumans, Peter; Forrest, Stephen R.

    2013-01-22

    A photoactive device is provided. The device includes a first electrode, a second electrode, and a photoactive region disposed between and electrically connected to the first and second electrodes. The photoactive region further includes an organic donor layer and an organic acceptor layer that form a donor-acceptor heterojunction. The mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region are different by a factor of at least 100, and more preferably a factor of at least 1000. At least one of the mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region is greater than 0.001 cm.sup.2/V-sec, and more preferably greater than 1 cm.sup.2/V-sec. The heterojunction may be of various types, including a planar heterojunction, a bulk heterojunction, a mixed heterojunction, and a hybrid planar-mixed heterojunction.

  6. Mechanics of stretchable electronics with high fill factors Yewang Su a,b

    E-Print Network [OSTI]

    Rogers, John A.

    and flexible electronics to achieve both mechanical stretchability and high fill factors (e.g., full, 100. 1. Introduction Stretchable and flexible electronics have performance equal to established shows the mesh design of stretchable and flexible electronics (Kim et al., 2008b; Song et al., 2009; Su

  7. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

    1999-02-09

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  8. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

    1997-10-07

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  9. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.

    1999-02-09

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  10. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.

    1997-10-07

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  11. (OWC's) ' (heaving devices) (heaving devices)

    E-Print Network [OSTI]

    Psarrakos, Panayiotis

    Testing», EU GD Energy, 2002 ­ 2003). ­ Coordination action on Ocean Energy", EU GD Research, 2004 ­ 2007 ` ' : ­ ­ : ­ ­ #12;: : : · : · : . (OWC's) ' (heaving devices University · ­ "Offshore Wave Energy Converters (OWEC1)", EU, GD Research, OULE II, 19931995. ­ LABBUOY

  12. Solution Processed Silver Sulfide Thin Films for Filament Memory Applications

    E-Print Network [OSTI]

    Yin, Shong

    2010-01-01

    Film for Flexible Electronics. ” [Online]. Available:Conductors for Flexible Electronics,” Journal of Theelectronics. This field targets novel low-cost, large device area applications such as flexible

  13. Flexible ultrasonic pipe inspection apparatus

    DOE Patents [OSTI]

    Jenkins, Charles F. (Aiken, SC); Howard, Boyd D. (Augusta, GA)

    1998-01-01

    A flexible, modular ultrasonic pipe inspection apparatus, comprising a flexible, hollow shaft that carries a plurality of modules, including at least one rotatable ultrasonic transducer, a motor/gear unit, and a position/signal encoder. The modules are connected by flexible knuckle joints that allow each module of the apparatus to change its relative orientation with respect to a neighboring module, while the shaft protects electrical wiring from kinking or buckling while the apparatus moves around a tight corner. The apparatus is moved through a pipe by any suitable means, including a tether or drawstring attached to the nose or tail, differential hydraulic pressure, or a pipe pig. The rotational speed of the ultrasonic transducer and the forward velocity of the apparatus are coordinated so that the beam sweeps out the entire interior surface of the pipe, enabling the operator to accurately assess the condition of the pipe wall and determine whether or not leak-prone corrosion damage is present.

  14. Adhesion Transition of Flexible Sheets

    E-Print Network [OSTI]

    Arthur A. Evans; Eric Lauga

    2009-05-31

    Intermolecular forces are known to precipitate adhesion events between solid bodies. Inspired by a macro-scale experiment showing the hysteretic adhesion of a piece of flexible tape over a plastic substrate, we develop here a model of far-field dry adhesion between two flexible sheets interacting via a power-law potential. We show that phase transitions from unadhered to adhered states occur as dictated by a dimensionless bending parameter representing the ratio of interaction strength to bending stiffness. The order of the adhesion transitions, as well as their hysteretic nature, is shown to depend on the form of the interaction potential between the flexible sheets. When three or more sheets interact, additional geometrical considerations determine the hierarchical or sequential nature of the adhesion transitions.

  15. Electrochemical device

    DOE Patents [OSTI]

    Grimes, Patrick G. (Westfield, NJ); Einstein, Harry (Springfield, NJ); Bellows, Richard J. (Westfield, NJ)

    1988-01-12

    A tunnel protected electrochemical device features channels fluidically communicating between manifold, tunnels and cells. The channels are designed to provide the most efficient use of auxiliary power. The channels have a greater hydraulic pressure drop and electrical resistance than the manifold. This will provide a design with the optimum auxiliary energy requirements.

  16. Detection device

    DOE Patents [OSTI]

    Smith, Jay E. (Pittsburgh, PA)

    1984-01-01

    The present invention is directed to a detection device comprising: (1) an entrance chamber, (2) a central chamber, and (3) an exit chamber. The central chamber includes an ionizing gas, anode, and means for connecting the anode with an external power supply and pulse counter.

  17. Sponsored by Nanotechnology Seminar Program Electronics on Anything: How Thin Film

    E-Print Network [OSTI]

    Fisher, Frank

    including electronically active and flexible materials. Our group has been working on the hybrid integrationSponsored by Nanotechnology Seminar Program Electronics on Anything: How Thin Film Electronics University ABSTRACT: Silicon electronics have revolutionized the processing and handling of information

  18. Automatic Mechetronic Wheel Light Device

    DOE Patents [OSTI]

    Khan, Mohammed John Fitzgerald (Silver Spring, MD)

    2004-09-14

    A wheel lighting device for illuminating a wheel of a vehicle to increase safety and enhance aesthetics. The device produces the appearance of a "ring of light" on a vehicle's wheels as the vehicle moves. The "ring of light" can automatically change in color and/or brightness according to a vehicle's speed, acceleration, jerk, selection of transmission gears, and/or engine speed. The device provides auxiliary indicator lights by producing light in conjunction with a vehicle's turn signals, hazard lights, alarm systems, and etc. The device comprises a combination of mechanical and electronic components and can be placed on the outer or inner surface of a wheel or made integral to a wheel or wheel cover. The device can be configured for all vehicle types, and is electrically powered by a vehicle's electrical system and/or battery.

  19. Flexible NOx Abatement from Power

    E-Print Network [OSTI]

    's Integrated Global System Model. Through this integrated model, the Program seeks to: discover new quality management strategies for NOx emissions from electric generating units. Results from a modelFlexible NOx Abatement from Power Plants in the Eastern United States* Lin Sun, Mort Webster, Gary

  20. Flexibility Premium in Marketable Permits

    E-Print Network [OSTI]

    Macrina, Andrea

    for emission permits should attract those regulated companies with lower marginal costs for pollution abatement with lower marginal abatement costs to exploit the consequent price difference. 4 / 27 #12;Flexibility-emitting technology, modification of the production process, technology innovation); trading emission permits (spot

  1. Flexible ultrasonic pipe inspection apparatus

    DOE Patents [OSTI]

    Jenkins, C.F.; Howard, B.D.

    1994-01-01

    Pipe crawlers, pipe inspection {open_quotes}rabbits{close_quotes} and similar vehicles are widely used for inspecting the interior surfaces of piping systems, storage tanks and process vessels for damaged or flawed structural features. This paper describes the design of a flexible, modular ultrasonic pipe inspection apparatus.

  2. Laser device

    DOE Patents [OSTI]

    Scott, Jill R. (Idaho Falls, ID); Tremblay, Paul L. (Idaho Falls, ID)

    2008-08-19

    A laser device includes a virtual source configured to aim laser energy that originates from a true source. The virtual source has a vertical rotational axis during vertical motion of the virtual source and the vertical axis passes through an exit point from which the laser energy emanates independent of virtual source position. The emanating laser energy is collinear with an orientation line. The laser device includes a virtual source manipulation mechanism that positions the virtual source. The manipulation mechanism has a center of lateral pivot approximately coincident with a lateral index and a center of vertical pivot approximately coincident with a vertical index. The vertical index and lateral index intersect at an index origin. The virtual source and manipulation mechanism auto align the orientation line through the index origin during virtual source motion.

  3. Electron beam generation in Tevatron electron lenses

    SciTech Connect (OSTI)

    Kamerdzhiev, V.; Kuznetsov, G.; Shiltsev, V.; Solyak, N.; Tiunov, M.; /Novosibirsk, IYF

    2006-08-01

    New type of high perveance electron guns with convex cathode has been developed. Three guns described in this article are built to provide transverse electron current density distributions needed for Electron Lenses for beam-beam compensation in the Tevatron collider. The current distribution can be controlled either by the gun geometry or by voltage on a special control electrode located near cathode. We present the designs of the guns and report results of beam measurements on the test bench. Because of their high current density and low transverse temperature of electrons, electron guns of this type can be used in electron cooling and beam-beam compensation devices.

  4. Energy-Efficiency and Storage Flexibility in the Blue File System Edmund B. Nightingale and Jason Flinn

    E-Print Network [OSTI]

    Flinn, Jason

    Energy-Efficiency and Storage Flexibility in the Blue File System Edmund B. Nightingale and Jason connec- tivity to small, mobile devices. Portable storage, such as mobile disks and USB keychains, let to pervasive data access remain. First, power-hungry network and storage devices tax the lim- ited battery

  5. Microelectromechanical safe arm device

    SciTech Connect (OSTI)

    Roesler, Alexander W. (Tijeras, NM)

    2012-06-05

    Microelectromechanical (MEM) apparatus and methods for operating, for preventing unintentional detonation of energetic components comprising pyrotechnic and explosive materials, such as air bag deployment systems, munitions and pyrotechnics. The MEM apparatus comprises an interrupting member that can be moved to block (interrupt) or complete (uninterrupt) an explosive train that is part of an energetic component. One or more latching members are provided that engage and prevent the movement of the interrupting member, until the one or more latching members are disengaged from the interrupting member. The MEM apparatus can be utilized as a safe and arm device (SAD) and electronic safe and arm device (ESAD) in preventing unintentional detonations. Methods for operating the MEM apparatus include independently applying drive signals to the actuators coupled to the latching members, and an actuator coupled to the interrupting member.

  6. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    SciTech Connect (OSTI)

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches between the various layers. The defect density in GaAs was reduced by a factor of five by adding a step of in-situ deposition of Ge by MBE on the sputtered Ge prior to GaAs growth. We have investigated device design strategies that would support development of high-efficiency devices in presence of dislocation densities of 10^8 cm^-2 present in our epitaxial GaAs films. Results from modeling work show that with a proper emitter, base and doping selection, the modeled efficiency of a GaAs cells with dislocation densities of 10^9 and 10^8 cm^-2 could be increased from 1% and 7% to 11% and 17% respectively. Under AM0, this single junction GaAs solar cell, has optimized value of emitter and base thickness of around 0.7 and 1.7 microns respectively, to give a maximum efficiency of 24.2%. We have fabricated complete GaAs solar cells using our Ge films on metal substrates. Pattern resolution of few microns with well-defined grid line of 30 microns has been realized on few cm square flexible templates. The ability to grow single-crystalline-like Ge films on flexible, polycrystalline substrates by reel-to-reel tape processing now provides an immense potential to fabricate high quality III-V photovoltaics on flexible, inexpensive substrates.

  7. Flexible Transmission in the Smart Grid

    E-Print Network [OSTI]

    Hedman, Kory Walter

    2010-01-01

    E. B. Fisher, S. S. Oren, “Smart flexible just-in-timeISO New England Outlook: Smart Grid is About Consumers,”Flexible Transmission in the Smart Grid By Kory Walter

  8. Flexible Hardware Abstraction for Wireless Sensor Networks

    E-Print Network [OSTI]

    California at Berkeley, University of

    Flexible Hardware Abstraction for Wireless Sensor Networks Vlado Handziski, Joseph Polastre, Jan; Computer Science Department Berkeley, CA 94720 US Abstract-- We present a flexible Hardware Abstraction gradually adapts the capabilities of the underlying hardware plat- forms to the selected platform

  9. ULTRA BARRIER TOPSHEET (UBT) FOR FLEXIBLE PHOTOVOLTAICS

    SciTech Connect (OSTI)

    DeScioli, Derek

    2013-06-01

    This slide-show presents 3M photovoltaic-related products, particularly flexible components. Emphasis is on the 3M Ultra Barrier Solar Films. Topics covered include reliability and qualification testing and flexible photovoltaic encapsulation costs.

  10. Abstract--Digital control is a powerful modern design technique and important research topic in power electronics, and

    E-Print Network [OSTI]

    in power electronics, and it is useful to have a simple but flexible platform for experimentation Electronics Center, ECE Dept. University of Colorado at

  11. Solar Energy Materials & Solar Cells 90 (2006) 34073415 High-efficiency flexible CdTe solar cells

    E-Print Network [OSTI]

    Romeo, Alessandro

    2006-01-01

    Solar Energy Materials & Solar Cells 90 (2006) 3407­3415 High-efficiency flexible CdTe solar cells: Solar cells; Thin films; CdTe; Flexible solar cells; Space solar cells; Solar energy ARTICLE IN PRESS for Renewable Energy Systems and Technology), Department of Electronic and Electrical Engineering, Loughborough

  12. Electrical device fabrication from nanotube formations

    DOE Patents [OSTI]

    Nicholas, Nolan Walker; Kittrell, W. Carter; Kim, Myung Jong; Schmidt, Howard K.

    2013-03-12

    A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

  13. Diversionary device

    DOE Patents [OSTI]

    Grubelich, Mark C. (Albuquerque, NM)

    2001-01-01

    A diversionary device has a housing having at least one opening and containing a non-explosive propellant and a quantity of fine powder packed within the housing, with the powder being located between the propellant and the opening. When the propellant is activated, it has sufficient energy to propel the powder through the opening to produce a cloud of powder outside the housing. An igniter is also provided for igniting the cloud of powder to create a diversionary flash and bang, but at a low enough pressure to avoid injuring nearby people.

  14. Protein flexibility and dynamics using constraint theory

    E-Print Network [OSTI]

    Jacobs, Donald J.

    place, consistent with these distance constraints. We also define a flexibility index that quantifies the local density of flexible or floppy modes, in terms of the dihedral angles that remain free to rotate of the flexible regions by introducing Monte Carlo changes in the free dihedral angles, subject to the distance

  15. The sedimentation of flexible filaments

    E-Print Network [OSTI]

    Lei Li; Harishankar Manikantan; David Saintillan; Saverio E. Spagnolie

    2013-06-19

    The dynamics of a flexible filament sedimenting in a viscous fluid are explored analytically and numerically. Compared to the well-studied case of sedimenting rigid rods, the introduction of filament compliance is shown to cause a significant alteration in the long-time sedimentation orientation and filament geometry. A model is developed by balancing viscous, elastic, and gravitational forces in a slender-body theory for zero-Reynolds-number flows, and the filament dynamics are characterized by a dimensionless elasto-gravitation number. Filaments of both non-uniform and uniform cross-sectional thickness are considered. In the weakly flexible regime, a multiple-scale asymptotic expansion is used to obtain expressions for filament translations, rotations, and shapes. These are shown to match excellently with full numerical simulations. Furthermore, we show that trajectories of sedimenting flexible filaments, unlike their rigid counterparts, are restricted to a cloud whose envelope is determined by the elasto-gravitation number. In the highly flexible regime we show that a filament sedimenting along its long axis is susceptible to a buckling instability. A linear stability analysis provides a dispersion relation, illustrating clearly the competing effects of the compressive stress and the restoring elastic force in the buckling process. The instability travels as a wave along the filament opposite the direction of gravity as it grows and the predicted growth rates are shown to compare favorably with numerical simulations. The linear eigenmodes of the governing equation are also studied, which agree well with the finite-amplitude buckled shapes arising in simulations.

  16. Flexible ultrasonic pipe inspection apparatus

    DOE Patents [OSTI]

    Jenkins, C.F.; Howard, B.D.

    1998-06-23

    A flexible, modular ultrasonic pipe inspection apparatus, comprises a flexible, hollow shaft that carries a plurality of modules, including at least one rotatable ultrasonic transducer, a motor/gear unit, and a position/signal encoder. The modules are connected by flexible knuckle joints that allow each module of the apparatus to change its relative orientation with respect to a neighboring module, while the shaft protects electrical wiring from kinking or buckling while the apparatus moves around a tight corner. The apparatus is moved through a pipe by any suitable means, including a tether or drawstring attached to the nose or tail, differential hydraulic pressure, or a pipe pig. The rotational speed of the ultrasonic transducer and the forward velocity of the apparatus are coordinated so that the beam sweeps out the entire interior surface of the pipe, enabling the operator to accurately assess the condition of the pipe wall and determine whether or not leak-prone corrosion damage is present. 7 figs.

  17. DEVICE FABRICATION Three-dimensional

    E-Print Network [OSTI]

    arrays of the diodes in 3D matrices. 3D printers transform the output files from computer-aided design ability to rapidly print three-dimen- sional (3D) electronic devices would enable myriad applications nanocrystals that exhibit tunable colour emission2­4 . Using a 3D-printing method based on extruding multiple

  18. Supporting information Screen Printing as a Scalable and Low-cost Approach for Rigid and Flexible Thin-

    E-Print Network [OSTI]

    Zhou, Chongwu

    1 Supporting information Screen Printing as a Scalable and Low-cost Approach for Rigid and Flexible ) Index of devices 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 Log(Ion /Ioff ) Index of devices 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 Index of devices Ion /W(A/mm) 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 Thresholdvoltage

  19. Characteristics of Graphitic Films for Carbon Based Magnetism and Electronics

    E-Print Network [OSTI]

    Hong, Jeongmin

    2009-01-01

    D. M. Treger, “Spintronics: a spin-based electronics visionfrom one part of a spintronic device to another using thethe advantages of spintronics, spintronic devices have the

  20. Molecular-scale devices from first principles

    E-Print Network [OSTI]

    Singh-Miller, Nicholas E. (Nicholas Edward)

    2009-01-01

    Electronic structure calculations are becoming more widely applied to complex and realistic materials systems and devices, reaching well into the domain of nanotechnology, with applications that include metal-molecule ...

  1. Design Features of a Planar Hybrid/Permanent Magnet Strong Focusing Undulator for Free Electron Laser (FEL) And Synchrotron Radiation (SR) Applications

    SciTech Connect (OSTI)

    Tatchyn, Roman; /SLAC

    2011-09-09

    Insertion devices for Angstrom-wavelength Free Electron Laser (FEL) amplifiers driven by multi-GeV electron beams generally require distributed focusing substantially stronger than their own natural focusing fields. Over the last several years a wide variety of focusing schemes and configurations have been proposed for undulators of this class, ranging from conventional current-driven quadrupoles external to the undulator magnets to permanent magnet (PM) lattices inserted into the insertion device gap. In this paper we present design studies of a flexible high-field hybrid/PM undulator with strong superimposed planar PM focusing proposed for a 1.5 Angstrom Linac Coherent Light Source (LCLS) driven by an electron beam with a 1 mm-mr normalized emittance. Attainable field parameters, tuning modes, and potential applications of the proposed structure are discussed.

  2. Flat panel ferroelectric electron emission display system

    DOE Patents [OSTI]

    Sampayan, S.E.; Orvis, W.J.; Caporaso, G.J.; Wieskamp, T.F.

    1996-04-16

    A device is disclosed which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density. 6 figs.

  3. Flat panel ferroelectric electron emission display system

    DOE Patents [OSTI]

    Sampayan, Stephen E. (Manteca, CA); Orvis, William J. (Livermore, CA); Caporaso, George J. (Livermore, CA); Wieskamp, Ted F. (Livermore, CA)

    1996-01-01

    A device which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density.

  4. Energy-Efficiency and Storage Flexibility in the Blue File System

    E-Print Network [OSTI]

    Fu, Xiaoming

    Energy-Efficiency and Storage Flexibility in the Blue File System Salke HartungSalke Hartung storage, but don`t have energy-efficiency as a prior design goalg g PersonalRAID[4] can be used to keep devices: Adapt easily to performance and energy characteristics of all storage types (local, portable

  5. Multiported storage devices 

    E-Print Network [OSTI]

    Grande, Marcus Bryan

    2000-01-01

    and intelligence than the traditional block storage device. A multiported storage device allows application-specific code that we call filter applets to be downloaded to the device while still maintaining the simple block-level interface. The device contains...

  6. Flexible, transparent thin film transistors raise hopes for flexible

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journal Article) |Final ReporttheHouseNew ventureFlexible Work

  7. Two-dimensional materials for ubiquitous electronics

    E-Print Network [OSTI]

    Yu, Lili, S.M. Massachusetts Institute of Technology

    2013-01-01

    Ubiquitous electronics will be a very important component of future electronics. However, today's approaches to large area, low cost, potentially ubiquitous electronic devices are currently dominated by the low mobility ...

  8. Optoelectronic device

    DOE Patents [OSTI]

    Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

    2014-09-09

    The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

  9. Photovoltaic power plant as FACTS devices in multi-feeder systems

    E-Print Network [OSTI]

    Moawwad, Ahmed

    This paper illustrates possible configurations for a large-scale photovoltaic power plant (PV), to operate as a FACTS (flexible AC transmission system) device in addition to operating as a source of renewable power generation. ...

  10. Modeling and control of rapid cure in polydimethylsiloxane (PDMS) for microfluidic device applications

    E-Print Network [OSTI]

    Wong, Eehern J

    2010-01-01

    Polydimethylsiloxane (PDMS) is an important thermosetting elastomer for microfluidic devices because it can replicate nano-scale features and form flexible membranes useful for microactuation. PDMS is used extensively in ...

  11. DAMPING IMPROVEMENT THROUGH TUNING CONTROLLER LIMITS OF A SERIES FACTS DEVICE

    E-Print Network [OSTI]

    Hiskens, Ian A.

    the capacities of existing power lines. In the last decade, the series flexible ac transmission systems (FACTS of the saturation limiter (with non-smooth nonlinearities) on system dynamics of a power network equipped for saturation limits. The external controller (EC) of a series flexible ac transmission system (FACTS) device

  12. The photographic capacity of a gamma Compton backscattering device

    SciTech Connect (OSTI)

    Fajardo, E.; Nader, M. F.; Cristancho, F.; Gerl, J.

    2010-08-04

    A gamma Compton backscattering device is presented. It is shown that by fine-tuning several electronics parameters an image of recognizable geometry is obtained.

  13. Joint with application in electrochemical devices

    DOE Patents [OSTI]

    Weil, K Scott [Richland, WA; Hardy, John S [Richland, WA

    2010-09-14

    A joint for use in electrochemical devices, such as solid oxide fuel cells (SOFCs), oxygen separators, and hydrogen separators, that will maintain a hermetic seal at operating temperatures of greater than 600.degree. C., despite repeated thermal cycling excess of 600.degree. C. in a hostile operating environment where one side of the joint is continuously exposed to an oxidizing atmosphere and the other side is continuously exposed to a wet reducing gas. The joint is formed of a metal part, a ceramic part, and a flexible gasket. The flexible gasket is metal, but is thinner and more flexible than the metal part. As the joint is heated and cooled, the flexible gasket is configured to flex in response to changes in the relative size of the metal part and the ceramic part brought about by differences in the coefficient of thermal expansion of the metal part and the ceramic part, such that substantially all of the tension created by the differences in the expansion and contraction of the ceramic and metal parts is absorbed and dissipated by flexing the flexible gasket.

  14. Fabrication and testing of thermoelectric thin film devices

    SciTech Connect (OSTI)

    Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C. [Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.

    1996-03-01

    Two thin-film thermoelectric devices are experimentally demonstrated. The relevant thermal loads on the cold junction of these devices are determined. The analytical form of the equation that describes the thermal loading of the device enables one to model the performance based on the independently measured electronic properties of the films forming the devices. This model elucidates which parameters determine device performance, and how they can be used to maximize performance.

  15. Thermodynamics of tubelike flexible polymers

    E-Print Network [OSTI]

    Thomas Vogel; Thomas Neuhaus; Michael Bachmann; Wolfhard Janke

    2009-07-17

    In this work we present the general phase behavior of short tubelike flexible polymers. The geometric thickness constraint is implemented through the concept of the global radius of curvature. We use sophisticated Monte Carlo sampling methods to simulate small bead-stick polymer models with Lennard-Jones interaction among non-bonded monomers. We analyze energetic fluctuations and structural quantities to classify conformational pseudophases. We find that the tube thickness influences the thermodynamic behavior of simple tubelike polymers significantly, i.e., for given temperature, the formation of secondary structures strongly depends on the tube thickness.

  16. Radiation-tolerant imaging device

    DOE Patents [OSTI]

    Colella, N.J.; Kimbrough, J.R.

    1996-11-19

    A barrier at a uniform depth for an entire wafer is used to produce imaging devices less susceptible to noise pulses produced by the passage of ionizing radiation. The barrier prevents charge created in the bulk silicon of a CCD detector or a semiconductor logic or memory device from entering the collection volume of each pixel in the imaging device. The charge barrier is a physical barrier, a potential barrier, or a combination of both. The physical barrier is formed by an SiO{sub 2} insulator. The potential barrier is formed by increasing the concentration of majority carriers (holes) to combine with the electron`s generated by the ionizing radiation. A manufacturer of CCD imaging devices can produce radiation-tolerant devices by merely changing the wafer type fed into his process stream from a standard wafer to one possessing a barrier beneath its surface, thus introducing a very small added cost to his production cost. An effective barrier type is an SiO{sub 2} layer. 7 figs.

  17. Laser device

    DOE Patents [OSTI]

    Scott, Jill R. (Idaho Falls, ID); Tremblay, Paul L. (Idaho Falls, ID)

    2007-07-10

    A laser device includes a target position, an optical component separated a distance J from the target position, and a laser energy source separated a distance H from the optical component, distance H being greater than distance J. A laser source manipulation mechanism exhibits a mechanical resolution of positioning the laser source. The mechanical resolution is less than a spatial resolution of laser energy at the target position as directed through the optical component. A vertical and a lateral index that intersect at an origin can be defined for the optical component. The manipulation mechanism can auto align laser aim through the origin during laser source motion. The laser source manipulation mechanism can include a mechanical index. The mechanical index can include a pivot point for laser source lateral motion and a reference point for laser source vertical motion. The target position can be located within an adverse environment including at least one of a high magnetic field, a vacuum system, a high pressure system, and a hazardous zone. The laser source and an electro-mechanical part of the manipulation mechanism can be located outside the adverse environment. The manipulation mechanism can include a Peaucellier linkage.

  18. Laser device

    DOE Patents [OSTI]

    Scott, Jill R.; Tremblay, Paul L.

    2004-11-23

    A laser device includes a target position, an optical component separated a distance J from the target position, and a laser energy source separated a distance H from the optical component, distance H being greater than distance J. A laser source manipulation mechanism exhibits a mechanical resolution of positioning the laser source. The mechanical resolution is less than a spatial resolution of laser energy at the target position as directed through the optical component. A vertical and a lateral index that intersect at an origin can be defined for the optical component. The manipulation mechanism can auto align laser aim through the origin during laser source motion. The laser source manipulation mechanism can include a mechanical index. The mechanical index can include a pivot point for laser source lateral motion and a reference point for laser source vertical motion. The target position can be located within an adverse environment including at least one of a high magnetic field, a vacuum system, a high pressure system, and a hazardous zone. The laser source and an electro-mechanical part of the manipulation mechanism can be located outside the adverse environment. The manipulation mechanism can include a Peaucellier linkage.

  19. Stable operating regime for traveling wave devices

    DOE Patents [OSTI]

    Carlsten, Bruce E. (Los Alamos, NM)

    2000-01-01

    Autophase stability is provided for a traveling wave device (TWD) electron beam for amplifying an RF electromagnetic wave in walls defining a waveguide for said electromagnetic wave. An off-axis electron beam is generated at a selected energy and has an energy noise inherently arising from electron gun. The off-axis electron beam is introduced into the waveguide. The off-axis electron beam is introduced into the waveguide at a second radius. The waveguide structure is designed to obtain a selected detuning of the electron beam. The off-axis electron beam has a velocity and the second radius to place the electron beam at a selected distance from the walls defining the waveguide, wherein changes in a density of the electron beam due to the RF electromagnetic wave are independent of the energy of the electron beam to provide a concomitant stable operating regime relative to the energy noise.

  20. MFR PAPER 1121 Sophisticated electronic devices

    E-Print Network [OSTI]

    spillway flows, and passage conditions. INTRODUCTION In 1956, two biologists of the N a- tional Marine- tive tracking range of up to I mile and battery life of about 10 days. Battery life can be increased by reducing the acoustic output, adding additional batteries, or changing the pulse rate and duration. Battery

  1. Environmental Effects on Power Electronic Devices

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of material constituents within PEDs. * Model and interpret PED thermomechanical stress states. * Optimize PED designs (i.e., seek to minimize stresses). * Recommend...

  2. Tunable Graphene Electronic Devices - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With WIPP UPDATE: April 15, 2014 Truck fireContact Us For

  3. Flexible network wireless transceiver and flexible network telemetry transceiver

    DOE Patents [OSTI]

    Brown, Kenneth D. (Grain Valley, MO)

    2008-08-05

    A transceiver for facilitating two-way wireless communication between a baseband application and other nodes in a wireless network, wherein the transceiver provides baseband communication networking and necessary configuration and control functions along with transmitter, receiver, and antenna functions to enable the wireless communication. More specifically, the transceiver provides a long-range wireless duplex communication node or channel between the baseband application, which is associated with a mobile or fixed space, air, water, or ground vehicle or other platform, and other nodes in the wireless network or grid. The transceiver broadly comprises a communication processor; a flexible telemetry transceiver including a receiver and a transmitter; a power conversion and regulation mechanism; a diplexer; and a phased array antenna system, wherein these various components and certain subcomponents thereof may be separately enclosed and distributable relative to the other components and subcomponents.

  4. Publish date: 06/27/2011 ECE 3311: Electronics I

    E-Print Network [OSTI]

    Gelfond, Michael

    Publish date: 06/27/2011 ECE 3311: Electronics I Credit / Contact hours: 3 / 3 Course coordinator, Oxford University Press 2010. (Recommended) Catalog description: Introduction to electronic devices, amplifiers, and electronic systems. Principles of electronic circuit design and analysis. Pre

  5. Flexibility in 21st Century Power Systems

    SciTech Connect (OSTI)

    Cochran, J.; Miller, M.; Zinaman, O.; Milligan, M.; Arent, D.; Palmintier, B.; O'Malley, M.; Mueller, S.; Lannoye, E.; Tuohy, A.; Kujala, B.; Sommer, M.; Holttinen, H.; Kiviluoma, J.; Soonee, S. K.

    2014-05-01

    Flexibility of operation--the ability of a power system to respond to change in demand and supply--is a characteristic of all power systems. Flexibility is especially prized in twenty-first century power systems, with higher levels of grid-connected variable renewable energy (primarily, wind and solar). This paper summarizes the analytic frameworks that have emerged to measure this characteristic and distills key principles of flexibility for policy makers.

  6. Nanomaterials processing toward large-scale flexible/stretchable electronics

    E-Print Network [OSTI]

    Takahashi, Toshitake

    2013-01-01

    formed, followed by atomic layer deposition of Al 2 O 3 (~8layer deposited by atomic layer deposition (ALD) sandwichedand lift-off. Atomic layer deposition of Al 2 O 3 (~70 nm)

  7. A methodology for identifying flexible design opportunities

    E-Print Network [OSTI]

    Wilds, Jennifer M

    2008-01-01

    Technical and operational uncertainties dynamically change environments for engineering systems. Flexibility allows systems to continue delivering value as the uncertainty unfolds. Uncertainty can better be managed by ...

  8. ULTRATHIN FLEXIBLE CRYSTALLINE SILICON: MICROSYSTEMS ENABLED PHOTOVOLTAICS

    E-Print Network [OSTI]

    ULTRATHIN FLEXIBLE CRYSTALLINE SILICON: MICROSYSTEMS ENABLED PHOTOVOLTAICS Jose L. Cruz Photovoltaics (MEPV) is a technique to create solar cells relying on tools from the microsystems and integrated

  9. Flexible interconnects for fuel cell stacks

    DOE Patents [OSTI]

    Lenz, David J.; Chung, Brandon W.; Pham, Ai Quoc

    2004-11-09

    An interconnect that facilitates electrical connection and mechanical support with minimal mechanical stress for fuel cell stacks. The interconnects are flexible and provide mechanically robust fuel cell stacks with higher stack performance at lower cost. The flexible interconnects replace the prior rigid rib interconnects with flexible "fingers" or contact pads which will accommodate the imperfect flatness of the ceramic fuel cells. Also, the mechanical stress of stacked fuel cells will be smaller due to the flexibility of the fingers. The interconnects can be one-sided or double-sided.

  10. Floating seal system for rotary devices

    DOE Patents [OSTI]

    Banasiuk, H.A.

    1983-08-23

    This invention relates to a floating seal system for rotary devices to reduce gas leakage around the rotary device in a duct and across the face of the rotary device to an adjacent duct. The peripheral seal bodies are made of resilient material having a generally U-shaped cross section wherein one of the legs is secured to a support member and the other of the legs forms a contacting seal against the rotary device. The legs of the peripheral seal form an extended angle of intersection of about 10[degree] to about 30[degree] in the unloaded condition to provide even sealing forces around the periphery of the rotary device. The peripheral seal extends around the periphery of the support member except where intersected by radial seals which reduce gas leakage across the face of the rotary device and between adjacent duct portions. The radial seal assembly is fabricated from channel bars, the smaller channel bar being secured to the divider of the support member and a larger inverted rigid floating channel bar having its legs freely movable over the legs of the smaller channel bar forming therewith a tubular channel. A resilient flexible tube is positioned within the tubular channel for substantially its full length to reduce gas leakage across the tubular channel. A spacer extends beyond the face of the floating channel near each end of the floating channel a distance to provide desired clearance between the floating channel and the face of the rotary device. 5 figs.

  11. High energy density redox flow device

    DOE Patents [OSTI]

    Chiang, Yet-Ming; Carter, W. Craig; Ho, Bryan Y; Duduta, Mihai; Limthongkul, Pimpa

    2014-05-13

    Redox flow devices are described in which at least one of the positive electrode or negative electrode-active materials is a semi-solid or is a condensed ion-storing electroactive material, and in which at least one of the electrode-active materials is transported to and from an assembly at which the electrochemical reaction occurs, producing electrical energy. The electronic conductivity of the semi-solid is increased by the addition of conductive particles to suspensions and/or via the surface modification of the solid in semi-solids (e.g., by coating the solid with a more electron conductive coating material to increase the power of the device). High energy density and high power redox flow devices are disclosed. The redox flow devices described herein can also include one or more inventive design features. In addition, inventive chemistries for use in redox flow devices are also described.

  12. Electrical and Optical Characterization of Nanoscale Materials for Electronics 

    E-Print Network [OSTI]

    Chang, Chi-Yuan 1980-

    2012-10-05

    Due to a lack of fundamental knowledge about the role of molecular structures in molecular electronic devices, this research is focused on the development of instruments to understand the relation between device design and the electronic properties...

  13. Connector device for building integrated photovoltaic device

    DOE Patents [OSTI]

    Keenihan, James R.; Langmaid, Joe A.; Eurich, Gerald K.; Lesniak, Michael J.; Mazor, Michael H.; Cleerman, Robert J.; Gaston, Ryan S.

    2015-11-10

    The present invention is premised upon a connector device and method that can more easily electrically connect a plurality of PV devices or photovoltaic system components and/or locate these devices/components upon a building structure. It also may optionally provide some additional sub-components (e.g. at least one bypass diode and/or an indicator means) and may enhance the serviceability of the device.

  14. Connector device for building integrated photovoltaic device

    SciTech Connect (OSTI)

    Keenihan, James R.; Langmaid, Joseph A.; Eurich, Gerald K.; Lesniak, Michael J.; Mazor, Michael H.; Cleereman, Robert J.; Gaston, Ryan S.

    2014-06-03

    The present invention is premised upon a connector device and method that can more easily electrically connect a plurality of PV devices or photovoltaic system components and/or locate these devices/components upon a building structure. It also may optionally provide some additional sub-components (e.g. at least one bypass diode and/or an indicator means) and may enhance the serviceability of the device.

  15. Flexible Micro Thermoelectric Generator based on Electroplated Bi2Te3

    E-Print Network [OSTI]

    Schwyter, E; Durrer, L; Hierold, Ch

    2008-01-01

    We present and discuss the fabrication process and the performance of a flexible micro thermoelectric generator with electroplated Bi2Te3 thermocouples in a SU-8 mold. Demonstrator devices generate 278uWcm-2 at dTmeas=40K across the experimental set up. Based on model calculations, a temperature difference of dTG=21.4K across the generator is assumed. Due to the flexible design and the chosen generator materials, the performance stays high even for curved contact surfaces. The measurement results correlate well with the model based design optimization predictions.

  16. Spintronic devices as quantum networks

    E-Print Network [OSTI]

    Radu Ionicioiu

    2005-12-15

    We explore spintronics from a quantum information (QI) perspective. We show that QI specific methods can be an effective tool in designing new devices. Using the formalism of quantum gates acting on spin and mode degrees of freedom, we provide a solution to a reverse engineering problem, namely how to design a device performing a given transformation between input and output. Among these, we describe an orientable Stern-Gerlach device and a new scheme to entangle two spins by transferring the entanglement from orbital to spin degrees of freedom. Finally, we propose a simple scheme to produce hyper-entangle electrons, i.e., particles entangled in both spin and mode degrees of freedom.

  17. High-flexibility, noncollapsing lightweight hose

    DOE Patents [OSTI]

    Williams, D.A.

    1993-04-20

    A high-flexibility, noncollapsing, lightweight, large-bore, wire-reinforced hose is inside fiber-reinforced PVC tubing that is flexible, lightweight, and abrasion resistant. It provides a strong, kink- and collapse-free conduit for moving large quantities of dangerous fluids, e.g., removing radioactive waste water or processing chemicals.

  18. High-flexibility, noncollapsing lightweight hose

    DOE Patents [OSTI]

    Williams, David A. (Pittsburgh, PA)

    1993-01-01

    A high-flexibility, noncollapsing, lightweight, large-bore, wire-reinforced hose is inside fiber-reinforced PVC tubing that is flexible, lightweight, and abrasion resistant. It provides a strong, kink- and collapse-free conduit for moving large quantities of dangerous fluids, e.g., removing radioactive waste water or processing chemicals.

  19. Significant advances in the past three decades have led to the merger of two otherwise independent fields of solid state devices. Spintronics was tradi onally about low temperature phenomena that modulate the spin of electrons or nuclei for quantum compu

    E-Print Network [OSTI]

    DeMara, Ronald F.

    fields of solid state devices. Spintronics was tradi onally about low temperature phenomena that modulate from Purdue Univer- sity in 2010 with specializa on in spintronics for logic applica ons. As an author and 7 invited talks. The spintronics device modeling formalisms for memory and logic that he co

  20. Electronically swept millimetre-wave interferometer for spatially resolved measurement of plasma electron

    E-Print Network [OSTI]

    Howard, John

    electron density John Howard and David Oliver Plasma Research Laboratory, Research School of Physical, located in the Plasma Research Laboratory at the Australian National University, is a flexible, medium

  1. Plug-and-play decentralized control for power networks with FACTS devices

    E-Print Network [OSTI]

    Ferrari-Trecate, Giancarlo

    networks equipped with Flexible AC Transmission Systems (FACTS) devices. We focus on the capability of power generation and size of transmission networks has been severely limited by economicPlug-and-play decentralized control for power networks with FACTS devices Stefano Riverso, Fabio

  2. Organic materials and devices for detecting ionizing radiation

    DOE Patents [OSTI]

    Doty, F. Patrick (Livermore, CA); Chinn, Douglas A. (Livermore, CA)

    2007-03-06

    A .pi.-conjugated organic material for detecting ionizing radiation, and particularly for detecting low energy fission neutrons. The .pi.-conjugated materials comprise a class of organic materials whose members are intrinsic semiconducting materials. Included in this class are .pi.-conjugated polymers, polyaromatic hydrocarbon molecules, and quinolates. Because of their high resistivities (.gtoreq.10.sup.9 ohmcm), these .pi.-conjugated organic materials exhibit very low leakage currents. A device for detecting and measuring ionizing radiation can be made by applying an electric field to a layer of the .pi.-conjugated polymer material to measure electron/hole pair formation. A layer of the .pi.-conjugated polymer material can be made by conventional polymer fabrication methods and can be cast into sheets capable of covering large areas. These sheets of polymer radiation detector material can be deposited between flexible electrodes and rolled up to form a radiation detector occupying a small volume but having a large surface area. The semiconducting polymer material can be easily fabricated in layers about 10 .mu.m to 100 .mu.m thick. These thin polymer layers and their associated electrodes can be stacked to form unique multi-layer detector arrangements that occupy small volume.

  3. Radiation-tolerant imaging device

    DOE Patents [OSTI]

    Colella, Nicholas J. (Livermore, CA); Kimbrough, Joseph R. (Pleasanton, CA)

    1996-01-01

    A barrier at a uniform depth for an entire wafer is used to produce imaging devices less susceptible to noise pulses produced by the passage of ionizing radiation. The barrier prevents charge created in the bulk silicon of a CCD detector or a semiconductor logic or memory device from entering the collection volume of each pixel in the imaging device. The charge barrier is a physical barrier, a potential barrier, or a combination of both. The physical barrier is formed by an SiO.sub.2 insulator. The potential barrier is formed by increasing the concentration of majority carriers (holes) to combine with the electron's generated by the ionizing radiation. A manufacturer of CCD imaging devices can produce radiation-tolerant devices by merely changing the wafer type fed into his process stream from a standard wafer to one possessing a barrier beneath its surface, thus introducing a very small added cost to his production cost. An effective barrier type is an SiO.sub.2 layer.

  4. Catalac free electron laser

    DOE Patents [OSTI]

    Brau, Charles A. (Los Alamos, NM); Swenson, Donald A. (Los Alamos, NM); Boyd, Jr., Thomas J. (Los Alamos, NM)

    1982-01-01

    A catalac free electron laser using a rf linac (catalac) which acts as a catalyst to accelerate an electron beam in an initial pass through the catalac and decelerate the electron beam during a second pass through the catalac. During the second pass through the catalac, energy is extracted from the electron beam and transformed to energy of the accelerating fields of the catalac to increase efficiency of the device. Various embodiments disclose the use of post linacs to add electron beam energy extracted by the wiggler and the use of supplementary catalacs to extract energy at various energy peaks produced by the free electron laser wiggler to further enhance efficiency of the catalac free electron laser. The catalac free electron laser can be used in conjunction with a simple resonator, a ring resonator or as an amplifier in conjunction with a master oscillator laser.

  5. Hydrocracking to achieve product flexibility

    SciTech Connect (OSTI)

    George, S.E. (Criterion Catalyst Co., Houston, TX (United States)); Boardman, S.R. (Criterion Catalyst Co., Fareham (United Kingdom)); Foley, R.M. (Zeolyst International, Houston, TX (United States)) (and others)

    1994-01-01

    Hydrocracking has demonstrated a broad diversity in upgrading a wide range of feedstocks ranging from atmospheric gas oil through heavy vacuum gas oil; conversion products from cat crackers and cokers; and product streams from lube plants and deasphalters. The 90's bring many challenges to the refining industry with more stringent environmental specifications on fuels and a general trend for conversion units such as hydrocrackers to process more difficult/low value feedstocks at higher throughputs. These changes are making hydrogen availability and catalyst stability a limiting factor in many refineries. There is an ever increasing incentive to develop catalyst technology to meet the challenges of the 1990's. The formation of Zeolyst International combined Shell's considerable hydrocracking catalyst technology with the zeolite powder R D and manufacturing expertise of PQ Corporation. Shell utilizes this catalyst technology in all 12 of their advised hydrocrackers world-wide, including 7 units in North America. This level of utilization exceeds the internal use of most process licensors. Criterion Catalyst Co. manufacturers and markets Zeolyst International zeolitic hydrocracking catalyst product line worldwide. This paper discusses the wide range of applications of Criterion/Zeolyst hydrocracking catalyst systems under a variety of feedstocks, operating conditions, and unit configurations with multiple product performance targets. Commercial feedback customers on the performance of Criterion/Zeolyst hydrocracking catalysts discussed in this paper demonstrates the flexibility and value added benefits of the systems.

  6. Assessing the operational life of flexible printed boards intended for continuous flexing applications : a case study.

    SciTech Connect (OSTI)

    Beck, David Franklin

    2011-01-01

    Through the vehicle of a case study, this paper describes in detail how the guidance found in the suite of IPC (Association Connecting Electronics Industries) publications can be applied to develop a high level of design assurance that flexible printed boards intended for continuous flexing applications will satisfy specified lifetime requirements.

  7. A LIGHT READ: A flexible array of LEDs on a folded sheet of paper.

    E-Print Network [OSTI]

    Rogers, John A.

    More about Climate Change? Features | 1 hour ago | 1 Tsunami warning called off after Indonesia quake sensors into stretchable, bendable, twistable sheets. The flexible systems might someday find use and inorganic LEDs by harnessing the light of conventional electronics in an elastic system with biomedical

  8. Colloidal quantum dot solar cells on curved and flexible substrates

    SciTech Connect (OSTI)

    Kramer, Illan J.; Moreno-Bautista, Gabriel; Minor, James C.; Kopilovic, Damir; Sargent, Edward H.

    2014-10-20

    Colloidal quantum dots (CQDs) are semiconductor nanocrystals synthesized with, processed in, and deposited from the solution phase, potentially enabling low-cost, facile manufacture of solar cells. Unfortunately, CQD solar cell reports, until now, have only explored batch-processing methods—such as spin-coating—that offer limited capacity for scaling. Spray-coating could offer a means of producing uniform colloidal quantum dot films that yield high-quality devices. Here, we explore the versatility of the spray-coating method by producing CQD solar cells in a variety of previously unexplored substrate arrangements. The potential transferability of the spray-coating method to a roll-to-roll manufacturing process was tested by spray-coating the CQD active layer onto six substrates mounted on a rapidly rotating drum, yielding devices with an average power conversion efficiency of 6.7%. We further tested the manufacturability of the process by endeavoring to spray onto flexible substrates, only to find that spraying while the substrate was flexed was crucial to achieving champion performance of 7.2% without compromise to open-circuit voltage. Having deposited onto a substrate with one axis of curvature, we then built our CQD solar cells onto a spherical lens substrate having two axes of curvature resulting in a 5% efficient device. These results show that CQDs deposited using our spraying method can be integrated to large-area manufacturing processes and can be used to make solar cells on unconventional shapes.

  9. Design and Fabrication of Complex Flexible Structures and Microarchitectures

    E-Print Network [OSTI]

    Mease, Kenneth D.

    Design and Fabrication of Complex Flexible Structures and Microarchitectures The ability to design and fabricate complex flexible structures is becoming increasingly important using flexible structures because design tools for creating them are limited and modeling

  10. Improved HEPA Filter Technology for Flexible and Rigid Containment Barriers

    SciTech Connect (OSTI)

    P. A. Pinson

    1998-07-01

    Safety and reliability in glovebox operations can be significantly improved and waste packaging efficiencies can be increased by inserting flexible, lightweight, high capacity HEPA filters into the walls of plastic sheet barriers. This HEPA filter/barrier technology can be adapted to a wide variety of applications: disposable waste bags, protective environmental barriers for electronic equipment, single or multiple use glovebag assemblies, flexible glovebox wall elements, and room partitions. These reliable and inexpensive filtered barriers have many uses in fields such as radioactive waste processing, HVAC filter changeout, vapor or grit blasting, asbestos cleanup, pharmaceutical, medical, biological, and electronic equipment containment. The applications can result in significant cost savings, improved operational reliability and safety, and total waste volume reduction. This technology was developed at the Argonne National Laboratory-West (ANL-W) in 1993 and has been used at ANL-W since then at the TRU Waste Characterization Chamber Gloveboxes. Another 1998 AGS Conference paper titled "TRU Waste Characterization Gloveboxes", presented by Mr. David Duncan of ANL-W, describes these boxes.

  11. Device-to-Device Assisted Video Transmission

    E-Print Network [OSTI]

    Shen, Y; Zhou, W; Wu, P; Toni, L; Cosman, P C; Milstein, L B

    2013-01-01

    Equipment (UE) radio transmission and reception (3GPP TSand Mobile Ad Hoc Networks: Transmission-Capacity Tradeoff”,Device Assisted Video Transmission Yichao Shen, Wenwen Zhou,

  12. Crystalline Nanoporous Frameworks: a Nanolaboratory for Probing Excitonic Device Concepts.

    SciTech Connect (OSTI)

    Allendorf, Mark D.; Azoulay, Jason; Ford, Alexandra Caroline; Foster, Michael E.; El Gabaly Marquez, Farid; Leonard, Francois Leonard; Leong-Hau, Kirsty; Stavila, Vitalie; Talin, Albert Alec; Wong, Brian M.; Brumbach, Michael T.; Van Gough, D.; Lambert, Timothy N.; Rodriguez, Mark A.; Spoerke, Erik David; Wheeler, David R.; Deaton, Joseph C.; Centrone, Andrea; Haney, Paul; Kinney, R.; Szalai, Veronika; Yoon, Heayoung P.

    2014-09-01

    Electro-optical organic materials hold great promise for the development of high-efficiency devices based on exciton formation and dissociation, such as organic photovoltaics (OPV) and organic light-emitting devices (OLEDs). However, the external quantum efficiency (EQE) of both OPV and OLEDs must be improved to make these technologies economical. Efficiency rolloff in OLEDs and inability to control morphology at key OPV interfaces both reduce EQE. Only by creating materials that allow manipulation and control of the intimate assembly and communication between various nanoscale excitonic components can we hope to first understand and then engineer the system to allow these materials to reach their potential. The aims of this proposal are to: 1) develop a paradigm-changing platform for probing excitonic processes composed of Crystalline Nanoporous Frameworks (CNFs) infiltrated with secondary materials (such as a complimentary semiconductor); 2) use them to probe fundamental aspects of excitonic processes; and 3) create prototype OPVs and OLEDs using infiltrated CNF as active device components. These functional platforms will allow detailed control of key interactions at the nanoscale, overcoming the disorder and limited synthetic control inherent in conventional organic materials. CNFs are revolutionary inorganic-organic hybrid materials boasting unmatched synthetic flexibility that allow tuning of chemical, geometric, electrical, and light absorption/generation properties. For example, bandgap engineering is feasible and polyaromatic linkers provide tunable photon antennae; rigid 1-5 nm pores provide an oriented, intimate host for triplet emitters (to improve light emission in OLEDs) or secondary semiconducting polymers (creating a charge-separation interface in OPV). These atomically engineered, ordered structures will enable critical fundamental questions to be answered concerning charge transport, nanoscale interfaces, and exciton behavior that are inaccessible in disordered systems. Implementing this concept also creates entirely new dimensions for device fabrication that could both improve performance, increase durability, and reduce costs with unprecedented control of over properties. This report summarizes the key results of this project and is divided into sections based on publications that resulted from the work. We begin in Section 2 with an investigation of light harvesting and energy transfer in a MOF infiltrated with donor and acceptor molecules of the type typically used in OPV devices (thiophenes and fullerenes, respectively). The results show that MOFs can provide multiple functions: as a light harvester, as a stabilizer and organizer or the infiltrated molecules, and as a facilitator of energy transfer. Section 3 describes computational design of MOF linker groups to accomplish light harvesting in the visible and facilitate charge separation and transport. The predictions were validated by UV-visible absorption spectroscopy, demonstrating that rational design of MOFs for light-harvesting purposes is feasible. Section 4 extends the infiltration concept discussed in Section to, which we now designate as %22Molecule%40MOF%22 to create an electrically conducting framework. The tailorability and high conductivity of this material are unprecedented, meriting publication in the journal Science and spawning several Technical Advances. Section 5 discusses processes we developed for depositing MOFs as thin films on substrates, a critical enabling technology for fabricating MOF-based electronic devices. Finally, in Section 6 we summarize results showing that a MOF thin film can be used as a sensitizer in a DSSC, demonstrating that MOFs can serve as active layers in excitonic devices. Overall, this project provides several crucial proofs-of- concept that the potential of MOFs for use in optoelectronic devices that we predicted several years ago [ 3 ] can be realized in practice.

  13. Fuel-Flexible Combustion System for Refinery and Chemical Plant...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Flexible Combustion System for Refinery and Chemical Plant Process Heaters - Fact Sheet 2014 Fuel-Flexible Combustion System for Refinery and Chemical Plant Process Heaters - Fact...

  14. Methods for Procuring Power System Flexibility, Greening the...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    interchange. METHODS FOR PROCURING POWER SYSTEM FLEXIBILITY Intraday Markets and Sub-Hourly Dispatch Wholesale energy markets can encourage flexibility by employing intraday...

  15. Development of Fuel-Flexible Combustion Systems Utilizing Opportunity...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Fuel-Flexible Combustion Systems Utilizing Opportunity Fuels in Gas Turbines - Fact Sheet, May 2014 Development of Fuel-Flexible Combustion Systems Utilizing Opportunity Fuels in...

  16. Flexible Distributed Energy and Water from Waste for the Food...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Flexible Distributed Energy and Water from Waste for the Food and Beverage Industry - Fact Sheet, 2014 Flexible Distributed Energy and Water from Waste for the Food and Beverage...

  17. Electricity for road transport, flexible power systems and wind...

    Open Energy Info (EERE)

    Electricity for road transport, flexible power systems and wind power (Smart Grid Project) Jump to: navigation, search Project Name Electricity for road transport, flexible power...

  18. Flexible conductive polymer polarizer designed for a chemical...

    Office of Scientific and Technical Information (OSTI)

    Conference: Flexible conductive polymer polarizer designed for a chemical tag. Citation Details In-Document Search Title: Flexible conductive polymer polarizer designed for a...

  19. Obfuscated authentication systems, devices, and methods

    DOE Patents [OSTI]

    Armstrong, Robert C; Hutchinson, Robert L

    2013-10-22

    Embodiments of the present invention are directed toward authentication systems, devices, and methods. Obfuscated executable instructions may encode an authentication procedure and protect an authentication key. The obfuscated executable instructions may require communication with a remote certifying authority for operation. In this manner, security may be controlled by the certifying authority without regard to the security of the electronic device running the obfuscated executable instructions.

  20. Direct transfer of graphene onto flexible substrates

    E-Print Network [OSTI]

    Araujo, Paulo Antonio Trinidade

    In this paper we explore the direct transfer via lamination of chemical vapor deposition graphene onto different flexible substrates. The transfer method investigated here is fast, simple, and does not require an intermediate ...

  1. Flexible Visual Authoring Using Operation History

    E-Print Network [OSTI]

    Su, Sara

    Flexible Visual Authoring Using Operation History Sara Su Massachusetts Institute of Technology l Revisiting history Storing and retrieving state Hierarchical authoring Grouping, structure, selections #12;Operations and selections today Uses of history System activity logs, instrumentation (not our focus

  2. A flexible system for Olympic villages

    E-Print Network [OSTI]

    Chung, Se-Hack

    1985-01-01

    This thesis suggests a flexible system and its systems approach in constructing Olympic Villages which are used both during and after the Games. A historical overview of ancient Olympia and modern Olympia, as well as a ...

  3. Nanocomposite Flexible Pressure Sensor for Biomedical Applications

    E-Print Network [OSTI]

    Fachin, F.

    A new approach for the fabrication of flexible pressure sensors based on aligned carbon nanotubes (A-CNTs) is described in this paper. The technology is suitable for blood pressure sensors that can be attached to a stent-graft ...

  4. PRECIOS ELECTRICOS FLEXIBLES* JUAN-PABLO MONTERO**

    E-Print Network [OSTI]

    Dixon, Juan

    PRECIOS ELECTRICOS FLEXIBLES* JUAN-PABLO MONTERO** HUGH RUDNICK*** ABSTRACT One of the critiques.-P. Montero, Pontificia Universidad Católica de Chile (PUC), Ingeniería Industrial, Casilla 306, Correo 22

  5. A flexible design framework for autonomous mowing

    E-Print Network [OSTI]

    Kraft, Justin (Justin A.)

    2011-01-01

    This work outlines the creation of a flexible design framework for autonomous mowing to meet changing customer needs and functionality across a spectrum of applications from residential areas to sport complexes. The thesis ...

  6. A Novel Flexible Sinusoidal Probe for Chronic Extracellular Brain Recording

    E-Print Network [OSTI]

    Sohal, Harbaljit S; Jackson, Andrew; Baker, Stuart N; O'Neill, Anthony

    2015-01-01

    Current microelectrodes designed to record chronic neural activity suffer from recording instabilities due to the modulus mismatch between the electrode materials and the brain. We sought to address this by microfabricating a novel flexible neural probe. Our probe was fabricated from parylene-C with a WTi metal, using contact photolithography and reactive ion etching, with three design features to address this modulus mismatch: a sinusoidal shaft, a rounded tip and a polyimide anchoring ball. The anchor restricts movement of the electrode recording sites and the shaft accommodates the brain motion. We successfully patterned thick metal and parylene-C layers, with a reliable device release process leading to high functional yield and were able to sample stable neural activity for over 2 years with this probe. We have successfully optimized the fabrication process to produce a reliable probe with high functional yield. This novel reliably microfabricated probe can record stable neural activity for up to two yea...

  7. 25 Year Lifetime for Flexible Buildings Integrated Photovoltaics

    SciTech Connect (OSTI)

    Gross, Mark E.

    2010-07-10

    Although preliminary proof-of-principle of the efficacy of barrier materials and processes, first developed by Battelle at PNNL and commercialized by Vitex, has been demonstrated at the laboratory scale, there are several challenges to the practical commercial implementation of these developments in the Buildings Integrated Photovoltaics (BIPV) market. Two important issues that are addressed in this project are identifying a low cost substrate material that can survive in the outside environment (rain, heat, dust, hail, etc.) for 25 years and developing an encapsulation method for the photovoltaic (PV) cells that can meet the required barrier performance without driving the cost of the total barrier package out of range (remaining below $3.00/Wp). Without these solutions, current encapsulation technologies will limit the use of PV for BIPV applications. Flexible, light-weight packaging that can withstand 25 years in the field is required for a totally flexible integrated PV package. The benefit of this research is to make substantial progress in the development of a cost-effective, viable thin film barrier package which will be a critical enabling technology to meet the Solar America Initiative cost and device reliability goals, and to make photovoltaics (PV) more cost-competitive with electricity generated using fossil fuels. Increased PV installations will enable increased US electrical capacity and reduce dependence on imported oil through increased utilization of a widely abundant source of renewable energy (sunlight).

  8. Detonation wave detection probe including parallel electrodes on a flexible backing strip

    DOE Patents [OSTI]

    Uher, K.J.

    1995-12-19

    A device is disclosed for sensing the occurrence of destructive events and events involving mechanical shock in a non-intrusive manner. A pair of electrodes is disposed in a parallel configuration on a backing strip of flexible film. Electrical circuitry is used to sense the time at which an event causes electrical continuity between the electrodes or, with a sensor configuration where the electrodes are shorted together, to sense the time at which electrical continuity is lost. 4 figs.

  9. Detonation wave detection probe including parallel electrodes on a flexible backing strip

    DOE Patents [OSTI]

    Uher, Kenneth J. (Los Alamos, NM)

    1995-01-01

    A device for sensing the occurrence of destructive events and events involving mechanical shock in a non-intrusive manner. A pair of electrodes is disposed in a parallel configuration on a backing strip of flexible film. Electrical circuitry is used to sense the time at which an event causes electrical continuity between the electrodes or, with a sensor configuration where the electrodes are shorted together, to sense the time at which electrical continuity is lost.

  10. 784 IEEE TRANSACTIONS ON SUSTAINABLE ENERGY, VOL. 3, NO. 4, OCTOBER 2012 Market Solutions for Managing Ramp Flexibility

    E-Print Network [OSTI]

    McCalley, James D.

    784 IEEE TRANSACTIONS ON SUSTAINABLE ENERGY, VOL. 3, NO. 4, OCTOBER 2012 Market Solutions generation provides us a greener and more sustainable future, it also introduces new challenges in scheduling entry of new flexible suppliers such as energy storage devices or demand response. Index Terms

  11. Biaxially oriented film on flexible polymeric substrate

    DOE Patents [OSTI]

    Finkikoglu, Alp T. (Los Alamos, NM); Matias, Vladimir (Santa Fe, NM)

    2009-10-13

    A flexible polymer-based template having a biaxially oriented film grown on the surface of a polymeric substrate. The template having the biaxially oriented film can be used for further epitaxial growth of films of interest for applications such as photovoltaic cells, light emitting diodes, and the like. Methods of forming such a flexible template and providing the polymeric substrate with a biaxially oriented film deposited thereon are also described.

  12. Regulation of flexible arms under gravity

    SciTech Connect (OSTI)

    De Luca, A.; Siciliano, B.

    1993-08-01

    A simple controller is presented for the regulation problem of robot arms with flexible links under gravity. It consists of a joint PD feedback plus a constant feedforward. Global asymptotic stability of the reference equilibrium state is shown under a structural assumption about link elasticity and a mild condition on the proportional gain. The result holds also in the absence of internal damping of the flexible arm. A numerical case study is presented.

  13. The Flexible-Salary Match: A Proposal to Increase the Salary Flexibility of the National Resident Matching Program

    E-Print Network [OSTI]

    Crawford, Vincent P.

    2005-01-01

    The Flexible-Salary Match: A Proposalto Increase the Salary Flexibility of the National Residentincluding the associated salaries. Both students and

  14. Method of making organic light emitting devices

    DOE Patents [OSTI]

    Shiang, Joseph John (Niskayuna, NY); Janora, Kevin Henry (Schenectady, NY); Parthasarathy, Gautam (Saratoga Springs, NY); Cella, James Anthony (Clifton Park, NY); Chichak, Kelly Scott (Clifton Park, NY)

    2011-03-22

    The present invention provides a method for the preparation of organic light-emitting devices comprising a bilayer structure made by forming a first film layer comprising an electroactive material and an INP precursor material, and exposing the first film layer to a radiation source under an inert atmosphere to generate an interpenetrating network polymer composition comprising the electroactive material. At least one additional layer is disposed on the reacted first film layer to complete the bilayer structure. The bilayer structure is comprised within an organic light-emitting device comprising standard features such as electrodes and optionally one or more additional layers serving as a bipolar emission layer, a hole injection layer, an electron injection layer, an electron transport layer, a hole transport layer, exciton-hole transporting layer, exciton-electron transporting layer, a hole transporting emission layer, or an electron transporting emission layer.

  15. Single Nanorod Devices for Battery Diagnostics: A Case Study on LiMn2O4

    E-Print Network [OSTI]

    Cui, Yi

    nanostructure devices as a powerful new diagnostic tool for batteries with LiMn2O4 nanorod materials energy storage devices for portable electronic devices, power tools, and electrical vehicles.1-4 Anodes applied to battery researches. This work represents the first example of single nanostructure device

  16. Bipolar thermoelectric devices

    E-Print Network [OSTI]

    Pipe, Kevin P. (Kevin Patrick), 1976-

    2004-01-01

    The work presented here is a theoretical and experimental study of heat production and transport in bipolar electrical devices, with detailed treatment of thermoelectric effects. Both homojunction and heterojunction devices ...

  17. Reinforcing Power Grid Transmission with FACTS Devices

    E-Print Network [OSTI]

    Frolov, Vladimir; Chertkov, Misha

    2013-01-01

    We explore optimization methods for planning the placement, sizing and operations of Flexible Alternating Current Transmission System (FACTS) devices installed into the grid to relieve congestion created by load growth or fluctuations of intermittent renewable generation. We limit our selection of FACTS devices to those that can be represented by modification of the inductance of the transmission lines. Our master optimization problem minimizes the $l_1$ norm of the FACTS-associated inductance correction subject to constraints enforcing that no line of the system exceeds its thermal limit. We develop off-line heuristics that reduce this non-convex optimization to a succession of Linear Programs (LP) where at each step the constraints are linearized analytically around the current operating point. The algorithm is accelerated further with a version of the cutting plane method greatly reducing the number of active constraints during the optimization, while checking feasibility of the non-active constraints post...

  18. Electronic and Magneto-electronic Properties of Nanopatterned and Multilayered Graphene

    E-Print Network [OSTI]

    Ahsan, Sonia

    2013-01-01

    bias condition (ii) n-p-n junction (iii) minimum conductionconductance in graphene p-n junctions,” Applied Physicsand bilayer grapahene p-n junctions,” IEEE Electron Device

  19. Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask

    SciTech Connect (OSTI)

    Shih, Fu-Yu [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Chen, Shao-Yu; Wu, Tsuei-Shin; Wang, Wei-Hua, E-mail: wwang@sinica.edu.tw [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Liu, Cheng-Hua; Chen, Yang-Fang [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Ho, Po-Hsun; Chen, Chun-Wei [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2014-06-15

    Two-dimensional (2D) atomic crystals and their hybrid structures have recently attracted much attention due to their potential applications. The fabrication of metallic contacts or nanostructures on 2D materials is very common and generally achieved by performing electron-beam (e-beam) lithography. However, e-beam lithography is not applicable in certain situations, e.g., cases in which the e-beam resist does not adhere to the substrates or the intrinsic properties of the 2D materials are greatly altered and degraded. Here, we present a residue-free approach for fabricating high-performance graphene devices by patterning a thin film of e-beam resist as a stencil mask. This technique can be generally applied to substrates with varying surface conditions, while causing negligible residues on graphene. The technique also preserves the design flexibility offered by e-beam lithography and therefore allows us to fabricate multi-probe metallic contacts. The graphene field-effect transistors fabricated by this method exhibit smooth surfaces, high mobility, and distinct magnetotransport properties, confirming the advantages and versatility of the presented residue-free technique for the fabrication of devices composed of 2D materials.

  20. Amorphous silicon photovoltaic devices

    DOE Patents [OSTI]

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  1. Photovoltaic device and method

    DOE Patents [OSTI]

    Cleereman, Robert; Lesniak, Michael J.; Keenihan, James R.; Langmaid, Joe A.; Gaston, Ryan; Eurich, Gerald K.; Boven, Michelle L.

    2015-11-24

    The present invention is premised upon an improved photovoltaic device ("PVD") and method of use, more particularly to an improved photovoltaic device with an integral locator and electrical terminal mechanism for transferring current to or from the improved photovoltaic device and the use as a system.

  2. Photovoltaic device and method

    DOE Patents [OSTI]

    Cleereman, Robert J; Lesniak, Michael J; Keenihan, James R; Langmaid, Joe A; Gaston, Ryan; Eurich, Gerald K; Boven, Michelle L

    2015-01-27

    The present invention is premised upon an improved photovoltaic device ("PVD") and method of use, more particularly to an improved photovoltaic device with an integral locator and electrical terminal mechanism for transferring current to or from the improved photovoltaic device and the use as a system.

  3. Articulating feedstock delivery device

    DOE Patents [OSTI]

    Jordan, Kevin

    2013-11-05

    A fully articulable feedstock delivery device that is designed to operate at pressure and temperature extremes. The device incorporates an articulating ball assembly which allows for more accurate delivery of the feedstock to a target location. The device is suitable for a variety of applications including, but not limited to, delivery of feedstock to a high-pressure reaction chamber or process zone.

  4. Organic photosensitive devices

    DOE Patents [OSTI]

    Rand, Barry P; Forrest, Stephen R

    2013-11-26

    The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

  5. Engineering Al-based Thin Film Materials for Power Devices and Energy Storage Applications

    E-Print Network [OSTI]

    Perng, Ya-Chuan

    2012-01-01

    of Nitride Semiconductors and Devices: Materials Properties,semiconductor electronic devices. AlN, possessing similar material propertiessemiconductors, SiC and AlGaN/GaN. Due to the differences in material properties,

  6. Carotid collar : a device for auscultory detection of carotid artery stenosis

    E-Print Network [OSTI]

    Gift, Jason Ayres, 1981-

    2003-01-01

    The carotid collar is a hardware device designed to aid in detecting carotid artery stenosis, a disease that increases the risk of stroke. This device consists of three electronic stethoscopes that record heart and carotid ...

  7. Unitary lens semiconductor device

    DOE Patents [OSTI]

    Lear, Kevin L. (Albuquerque, NM)

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  8. Portable data collection device

    DOE Patents [OSTI]

    French, P.D.

    1996-06-11

    The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time. 7 figs.

  9. Portable data collection device

    DOE Patents [OSTI]

    French, Patrick D. (Aurora, CO)

    1996-01-01

    The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time.

  10. Skyrmion Dynamics for Spintronic Devices

    E-Print Network [OSTI]

    Liu, Yizhou

    2013-01-01

    Skyrmion Dynamics for Spintronic Devices A Thesis submittedSkyrmion Dynamics for Spintronic Devices by Yizhou Liua candidate for future spintronic devices. However, Skyrmion

  11. Location Management for Mobile Devices

    E-Print Network [OSTI]

    Wilde, Erik

    2008-01-01

    general, and wireless and mobile devices in particular. Thelocation-enabled mobile devices and location-based services.information from mobile devices and making it available to

  12. Flexible shaft and roof drilling system

    DOE Patents [OSTI]

    Blanz, John H. (Carlisle, MA)

    1981-01-01

    A system for drilling holes in the roof of a mine has a flexible shaft with a pair of oppositely wound, coaxial flat bands. One of the flat bands defines an inner spring that is wound right handed into a helical configuration, adjacent convolutions being in nesting relationship to one another. The other flat band defines an outer spring that is wound left handed into a helical configuration about the inner band, adjacent convolutions being nesting relationship with one another. A transition member that is configured to hold a rock bit is mounted to one end of the flexible shaft. When torque and thrust are applied to the flexible shaft by a driver, the inner spring expands outwardly and the outer spring contracts inwardly to form a relatively rigid shaft.

  13. Superconducting Cable Having A Flexible Former

    DOE Patents [OSTI]

    Hughey, Raburn L. (Franklin, GA); Sinha, Uday K. (Carrollton, GA); Reece, David S. (Carrollton, GA); Muller, Albert C. (Eidson, TN)

    2005-08-30

    In order to provide a flexible oxide superconducting cable which is reduced in AC loss, tape-shaped superconducting wires covered with a stabilizing metal are wound on a flexible former. The superconducting wires are preferably laid on the former at a bending strain of not more than 0.2%. In laying on the former, a number of tape-shaped superconducting wires are laid on a core member in a side-by-side manner, to form a first layer. A prescribed number of tape-shaped superconducting wires are laid on top of the first layer in a side-by-side manner, to form a second layer. The former may be made of a metal, plastic, reinforced plastic, polymer, or a composite and provides flexibility to the superconducting wires and the cable formed therewith.

  14. Reinforced Electrode Architecture for a Flexible Battery with Paperlike Characteristics

    SciTech Connect (OSTI)

    Gaikwad, AM; Chu, HN; Qeraj, R; Zamarayeva, AM; Steingart, DA

    2013-02-10

    Compliant energy storage has not kept pace with flexible electronics. Herein we demonstrate a technique to reinforce arbitrary battery electrodes by supporting them with mechanically tough, low-cost fibrous membranes, which also serve as the separator. The membranes were laminated to form a full cell, and this stacked membrane reinforcement bears the loads during flexing. This technique was used to make a high energy density, nontoxic Zn-MnO2 battery with printed current collectors. The Zn and MnO2 electrodes were prepared by using a solution-based embedding process. The cell had a nominal potential of 1.5 V and an effective capacity of approximately 3 mA h cm(-2). We investigated the effect of bending and fatigue on the electrochemical performance and mechanical integrity of the battery. The battery was able to maintain its capacity even after 1000 flex cycles to a bend radius of 2.54 cm. The battery showed an improvement in discharge capacity (ca. 10%) if the MnO2 electrode was flexed to tension as a result of the improvement of particle-to-particle contact. In a demonstration, the flexible battery was used to power a light-emitting diode display integrated with a strain sensor and microcontroller.

  15. Electronics Research Beckman Institute

    E-Print Network [OSTI]

    Illinois at Urbana-Champaign, University of

    -assembling three-dimensional nanostructure for battery cathodes that enables extremely quick charging and discharging without sacrificing energy storage capacity.The new technology is compatible with current manufacturing methods and ideal for use in consumer electronics, electric vehicles, and medical devices, among

  16. electronic reprint Synchrotron

    E-Print Network [OSTI]

    or its storage in electronic databases or the like is not permitted without prior permission in writing-element speciation. Often, these trace elements are sorbed to clays or phyllomanganates, which are nanostructured as a function of position. Other materials examples include defects in semiconductor devices, which may also

  17. 2570 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 12, DECEMBER 2003 [1] J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, K. K. Shih, L. C. Chen,

    E-Print Network [OSTI]

    Hornsey, Richard

    light emitting diodes," IEEE J. Quantum. Electron., vol. 38, pp. 446­450, May 2002. [3] Y. L. Li, E. F-operation voltage of InGaN/ GaN light-emitting diodes by using a Mg-doped Al Ga N/GaN superlattice," IEEE Electron. Hirata, "Room-temperature operation at 333 nm of Al Ga N/ Al Ga N quantum-well light-emitting diodes

  18. Surface plasmon-enhanced photovoltaic device

    DOE Patents [OSTI]

    Kostecki, Robert; Mao, Samuel

    2014-10-07

    Photovoltaic devices are driven by intense photoemission of "hot" electrons from a suitable nanostructured metal. The metal should be an electron source with surface plasmon resonance within the visible and near-visible spectrum range (near IR to near UV (about 300 to 1000 nm)). Suitable metals include silver, gold, copper and alloys of silver, gold and copper with each other. Silver is particularly preferred for its advantageous opto-electronic properties in the near UV and visible spectrum range, relatively low cost, and simplicity of processing.

  19. Photonic Device Layout Within the Foundry CMOS Design Environment

    E-Print Network [OSTI]

    Orcutt, Jason Scott

    A design methodology to layout photonic devices within standard electronic complementary metal-oxide-semiconductor (CMOS) foundry data preparation flows is described. This platform has enabled the fabrication of designs ...

  20. Studies of advanced integrated nano-photonic devices in silicon

    E-Print Network [OSTI]

    Dahlem, Marcus

    2011-01-01

    Electronic-photonic integrated circuits (EPICs) are a promising technology for overcoming bandwidth and power-consumption bottlenecks of traditional integrated circuits. Silicon is a good candidate for building such devices, ...

  1. Scanning probe characterization of novel semiconductor materials and devices

    E-Print Network [OSTI]

    Zhou, Xiaotian

    2007-01-01

    structure and properties of semiconductor materials andsemiconductor material systems. In the first part of this dissertation, propertiessemiconductor devices shrink in size, it becomes more important to characterize and understand electronic properties of the materials

  2. Quantum information processing with trapped electrons and superconducting electronics

    E-Print Network [OSTI]

    Nikos Daniilidis; Dylan J Gorman; Lin Tian; Hartmut Häffner

    2013-04-17

    We describe a parametric frequency conversion scheme for trapped charged particles which enables a coherent interface between atomic and solid-state quantum systems. The scheme uses geometric non-linearities of the potential of a coupling electrode near a trapped particle. Our scheme does not rely on actively driven solid-state devices, and is hence largely immune to noise in such devices. We present a toolbox which can be used to build electron-based quantum information processing platforms, as well as quantum interfaces between trapped electrons and superconducting electronics.

  3. Organic spintronic devices and methods for making the same

    DOE Patents [OSTI]

    Vardeny, Zee Valentine; Ndobe, Alex

    2014-09-23

    An organic spintronic photovoltaic device (100) having an organic electron active layer (102) functionally associated with a pair of electrodes (104, 106). The organic electron active layer (102) can include a spin active molecular radical distributed in the active layer (102) which increases spin-lattice relaxation rates within the active layer (102). The increased spin lattice relaxation rate can also influence the efficiency of OLED and charge mobility in FET devices.

  4. FINANCIAL HEDGING OF OPERATIONAL FLEXIBILITY MICHAEL LUDKOVSKI

    E-Print Network [OSTI]

    Ludkovski, Mike

    -dependency. Moreover, the operator is only able to imperfectly hedge her income on the futures market. Using options, stochastic income. 1 #12;FINANCIAL HEDGING OF OPERATIONAL FLEXIBILITY 2 1. INTRODUCTION. The manager in charge has control over the operating modes and attempts to maximize expected profit which

  5. Hardware Supported Flexible Monitoring: Early Results

    E-Print Network [OSTI]

    Zhai, Antonia

    Hardware Supported Flexible Monitoring: Early Results Antonia Zhai, Guojin He, and Mats P. Monitoring of software's execution is crucial in numerous software development tasks. Current monitoring software must be studied in its pro- duction environment. To address this fundamental software engineering

  6. Health Care and Dependent Care Flexible

    E-Print Network [OSTI]

    Health Care and Dependent Care Flexible Spending Accounts Discovery Benefits, Inc. (866) 451 for certain health care and child care expenses with pre-tax dollars. FSA's may allow you to save money of money that is withheld from your pay on a pre-tax basis. Note: Health Care Reform extends medical FSA

  7. Flexible photovoltaic technologies Qingfeng Lin,a

    E-Print Network [OSTI]

    .5 Indeed, installed solar PV capacity has increased rapidly from just 1 GW in 2000 to 67 GW in 2011. In addition, a summary will be provided with perspective on the future development of flexible solar cells a pressing task to researchers all over the world. Solar energy is one of the most abundant and rene- wable

  8. Flexible hydrogel-based functional composite materials

    DOE Patents [OSTI]

    2013-10-08

    A composite having a flexible hydrogel polymer formed by mixing an organic phase with an inorganic composition, the organic phase selected from the group consisting of a hydrogel monomer, a crosslinker, a radical initiator, and/or a solvent. A polymerization mixture is formed and polymerized into a desired shape and size.

  9. DEDICATION VERSUS FLEXIBILITY IN FIELD SERVICE OPERATIONS

    E-Print Network [OSTI]

    Karaesmen, Fikri

    DEDICATION VERSUS FLEXIBILITY IN FIELD SERVICE OPERATIONS Fikri Karaesmen Frank Van der Duyn in contracts. Moreover, lately, there is strong pressure from clients to have a single dedicated technician who the analysis of various trade-offs between service levels and operational costs under the dedicated service

  10. Barrier breaching device

    DOE Patents [OSTI]

    Honodel, C.A.

    1983-06-01

    A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

  11. Electron Beam Verification with an Amorphous-Silicon Flat Panel Electronic

    E-Print Network [OSTI]

    Pouliot, Jean

    Electron Beam Verification with an Amorphous-Silicon Flat Panel Electronic Portal Imaging Device Latest News: First clinical electron beam portal image acquired in July 2001*** Rationale: Accuracy-6]. The electronic portal image represents the projection of the patient anatomy within the radiation field boundary

  12. High efficiency photovoltaic device

    DOE Patents [OSTI]

    Guha, Subhendu (Troy, MI); Yang, Chi C. (Troy, MI); Xu, Xi Xiang (Findlay, OH)

    1999-11-02

    An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

  13. The Linearly Scaling 3D Fragment Method for Large Scale Electronic Structure Calculations

    E-Print Network [OSTI]

    Zhao, Zhengji

    2009-01-01

    CdSe/CdS core/shell nanorods, which have potential applications in electronic devices and solar cells.

  14. The linearly scaling 3D fragment method for large scale electronic structure calculations

    E-Print Network [OSTI]

    Zhao, Zhengji

    2010-01-01

    CdSe/CdS core/shell nanorods, which have potential applications in electronic devices and solar cells.

  15. Mobile Device Management Android Device Enrollment

    E-Print Network [OSTI]

    to manage your device. c. Enter your password. #12;d. Accept the Terms and Conditions e. You have completed. 2. Get Touchdown from Google Play a. Open up the Google Play Store. b. Search for Touchdown. c. Use the application. #12;3. Get Citrix Mobile Connect from Google Play a. Open up the Google Play Store. b. Search

  16. Enabling manufacturing flexibility issue resolution in advanced vehicle development

    E-Print Network [OSTI]

    Tomlin, Grace C. (Grace Catherine)

    2008-01-01

    Manufacturing Flexibility is a broad term used to describe a metric that can be measured in many different ways. Current industry experts agree that Flexibility is one of the key measures that will help the automotive ...

  17. Flexibility in Aerospace and Automotive Component Manufacturing Systems

    E-Print Network [OSTI]

    de Weck, Olivier L.

    Flexibility in Aerospace and Automotive Component Manufacturing Systems: Practice, Strategy Supervisor #12;2 #12;Flexibility in Aerospace and Automotive Component Manufacturing Systems: Practice Traditionally, parts fabrication in the aerospace and automotive industries has been associated with a number

  18. Organism of options : a design strategy for flexible space

    E-Print Network [OSTI]

    Kim, Young-Ju, M. Arch. Massachusetts Institute of Technology

    2008-01-01

    The need for "flexibility" of architecture has been increasing as recent social demands are rapidly changing. However, many buildings designed in the name of flexibility are blocky, boring, and actually quite inflexible ...

  19. Solar tracking device

    SciTech Connect (OSTI)

    Wyland, R.R.

    1981-01-20

    A solar tracking device having a plurality of reflector banks for reflecting the sun rays onto collector tubes and heating a fluid circulated therethrough. The reflector banks synchronized to follow the sun during the daily and yearly cycle of the earth as the earth orbits around the sun. The device by accurately following the sun provides a more efficient means of collecting solar energy.

  20. Capillary interconnect device

    DOE Patents [OSTI]

    Renzi, Ronald F

    2013-11-19

    An interconnecting device for connecting a plurality of first fluid-bearing conduits to a corresponding plurality of second fluid-bearing conduits thereby providing fluid communication between the first fluid-bearing conduits and the second fluid-bearing conduits. The device includes a manifold and one or two ferrule plates that are held by compressive axial forces.