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1

Available Technologies: Thinner Film Silicon Solar Cells  

Berkeley Lab scientists have designed a new approach to create highly efficient thin film silicon solar cells. This technology promises to lower solar cell material ...

2

Thinner Film Silicon Solar Cells - Energy Innovation Portal  

Technology Marketing Summary Berkeley Lab scientists have designed a new approach to create thin film silicon solar cells with a potential increase in ...

3

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network (OSTI)

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

4

Recent technological advances in thin film solar cells  

DOE Green Energy (OSTI)

High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

Ullal, H.S.; Zwelbel, K.; Surek, T.

1990-03-01T23:59:59.000Z

5

Polycrystalline Thin-Film Multijunction Solar Cells  

DOE Green Energy (OSTI)

We present a digest of our research on the thin-film material components that comprise the top and bottom cells of three different material systems and the tandem devices constructed from them.

Noufi, R.; Wu, X.; Abu-Shama, J.; Ramanathan, K; Dhere, R.; Zhou, J.; Coutts, T.; Contreras, M.; Gessert, T.; Ward, J. S.

2005-11-01T23:59:59.000Z

6

Thin film polycrystalline silicon solar cells  

DOE Green Energy (OSTI)

During the present quarter efficiency of heterostructure solar cells has been increased from 13 to 13.7% for single crystal and from 10.3 to 11.2% for polysilicon. For polysilicon the improvements can be attributed to reductions in grid-area coverage and in reflection losses and for single crystal to a combination of reduction in grid-area coverage and increase in fill factor. The heterostructure cells in both cases were IT0/n-Si solar cells. Degradation in Sn0/sub 2//n-Si solar cells can be greatly reduced to negligible proportions by proper encapsulation. The cells used in stability tests have an average initial efficiency of 11% which reduces to a value of about 10.5% after 6 months of exposure to sunlight and ambient conditions. This small degradation occurs within the first month, and the efficiency remains constant subsequently. The reduction in efficiency is due to a decrease in the open-circuit voltage only, while the short-circuit current and fill factor remain constant. The effects of grain-size on the Hall measurements in polysilicon have been analyzed and interpreted, with some modifications, using a model proposed by Bube. This modified model predicts that the measured effective Hall voltage is composed of components originating from the bulk and space-charge region. For materials with large grains, the carrier concentration is independent of the inter-grain boundary barrier, whereas the mobility is dependent on it. However, for small rains, both the carrier density and mobility depend on the barrier. These predictions are consistant with experimental results of mm-size Wacker polysilicon and ..mu..m-size NTD polysilicon.

Ghosh, A. K.; Feng, T.; Eustace, D. J.; Maruska, H. P.

1980-01-01T23:59:59.000Z

7

Polycrystalline thin-film solar cells and modules  

DOE Green Energy (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

8

Polycrystalline thin-film solar cells and modules  

DOE Green Energy (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

9

Thin film solar cell including a spatially modulated intrinsic layer  

SciTech Connect

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

10

Polycrystalline Thin Film Solar Cell Technologies: Preprint  

DOE Green Energy (OSTI)

Rapid progress is being made by CdTe and CIGS-based thin-film PV technologies in entering commercial markets.

Ullal, H. S.

2008-12-01T23:59:59.000Z

11

Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells  

DOE Patents (OSTI)

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

1998-08-08T23:59:59.000Z

12

Silicon-film{trademark} on ceramic solar cells. Final report  

DOE Green Energy (OSTI)

The Silicon-Film{trademark} design achieves high performance through the use of a thin silicon layer. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The enhancement in performance requires the incorporation of back-surface passivation and light trapping. The high-performance Silicon-Film{trademark} design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. The properties of the metallurgical barrier must be engineered to implement specific device requirements, such as high back-surface reflectivity. Recent advances in process development are described here.

Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Lampo, S.M.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M. [AstroPower, Inc., Newark, DE (United States)

1993-02-01T23:59:59.000Z

13

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint  

Science Conference Proceedings (OSTI)

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01T23:59:59.000Z

14

Identification, Characterization, and Implications of Shadow Degradation in Thin Film Solar Cells  

E-Print Network (OSTI)

that the SD is a generic reliability concern for all thin film PV technologies, however, in this paper we, USA Abstract-- We describe a comprehensive study of intrinsic reliability issue arising from partial reliability concern for thin film solar cell. Keywords ­ Thin film solar cells, voltage stress, performance

Alam, Muhammad A.

15

Transparent Conductors and Barrier Layers for Thin Film Solar Cells:  

DOE Green Energy (OSTI)

This report describes the research undertaken to increase the efficiency of thin-film solar cells based on amorphous silicon in the so-called''superstrate structure'' (glass front surface/transparent electrically conductive oxide (TCO)/pin amorphous silicon/metal back electrode). The TCO layer must meet many requirements: high optical transparency in the wavelength region from about 350 to 900 nm, low electrical sheet resistance, stability during handling and deposition of the subsequent layers and during use, a textured (rough) surface to enhance optical absorption of red and near-infrared light, and low-resistance electrical contact to the amorphous silicon p-layer. Fluorine-doped tin oxide has been the TCO used in most commercial superstrate amorphous silicon cells. Fluorine-doped zinc oxide (ZnO:F) was later shown to be even more transparent than fluorine-doped tin oxide, as well as being more resistant to the strongly reducing conditions encountered during the deposition of amorphous silicon. Solar cells based on ZnO:F showed the expected higher currents, but the fill factors were lower than standard cells grown on tin oxide, resulting in no consistent improvement in efficiency. This problem was recently mitigated by using a new proprietary p/buffer layer combination developed at BP Solar.

Gordon, R. G.; Broomhall-Dillard, R.; Liu, X.; Pang, D.; Barton, J.

2001-12-01T23:59:59.000Z

16

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network (OSTI)

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

17

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

DOE Green Energy (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

18

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells  

E-Print Network (OSTI)

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical investigations of nc-SiGe:H thin films made by hot-wire chemical vapor deposition (HWCVD) with a coil

Deng, Xunming

19

Commercializatzon of thick film solar cells. Quarterly progress report, September 21, 1979-December 31, 1979  

DOE Green Energy (OSTI)

Starting materials for the preparation of thick film cadmium sulfide and cadmium telluride solar cells have been comminuted. Initial trial films of cadmium sulfide showed that during the next phase of this work, the printing of films, one of the major problem areas will be to obtain sufficient reflow in the printed films to remove the screen-caused variation in film thickness. The thin areas corresponding to the screen pattern caused pinholes to form in the fired parts.

McDonald, G.D.; Goodman, G.

1979-01-01T23:59:59.000Z

20

NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)  

Science Conference Proceedings (OSTI)

Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

Not Available

2012-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

Science Conference Proceedings (OSTI)

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

NONE

1995-01-01T23:59:59.000Z

22

Thin film transistors and solar cells. (Latest citations from the US Patent Bibliographic File with Exemplary Claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

Not Available

1993-11-01T23:59:59.000Z

23

Amorphous-silicon thin-film heterojunction solar cells  

DOE Green Energy (OSTI)

The investigation of amorphous silicon materials at MTSEC has had two major thrusts: (1) to improve the amorphous material, i.e., obtain a low state density in the gap, improve the carrier collection depth and diminish non-radiative recombinations; and (2) to attempt to understand and improve on the limitations of the junction devices while evaluating the amorphous silicon materials. In the first of these efforts, the investigation has continued to examine the modifications to the a-Si(H) network by alloying silicon with other group IVA elements, either in binary or ternary compositions, and/or by replacing the hydrogenation for defect compensation with a combination of hydrogenation and alkylation or hydrogenation and halogenation. The doped junction layers are being examined in an attempt to determine the limiting characteristics of the junctions in solar cell devices of these amorphous materials. Amorphous alloys of Si-Ge, Si-C, Si-Sn were prepared as well as ternary compositions of Si-Ge-C and Si-Sn-C. In addition, Na vapor was added to the gas feed to deposit a-Si(Na, H) films, and to prepare Si-Sn, fluoride was added along with the tin by vapor additions of SnF/sub 4/ to the gas feed. The optical properties of these materials were measured, and structural and compositional information was obtained from the IR vibrational spectra using the scanning electron microscope and from analyses using scanning Auger microscopy. Electrical measurements have included the dark conductivity and the photo conductivity under room fluorescent light and at AM1 conditions. With alloys that displayed promising photoconductive properties n-i-p devices were prepared to assess the solar cell properties. Details are presented. (WHK)

Cretella, M. C.; Gregory, J. A.; Sandstrom, D. B.; Paul, W.

1981-01-01T23:59:59.000Z

24

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network (OSTI)

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

25

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network (OSTI)

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

26

Earth abundant materials for high efficiency heterojunction thin film solar cells  

E-Print Network (OSTI)

We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure ...

Buonassisi, Tonio

27

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells  

E-Print Network (OSTI)

everything accelerates. ARCO solar produces more than 1 MW PV cells in `80, being the first in the world, the Million Solar Roofs in the US, and many more. Besides these programs, the efficiency of CdTe thin film PV energy source is the photovoltaic (PV) cell, which converts sunlight to electrical current, without any

Bieber, Michael

28

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network (OSTI)

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells thin film work. The most pressing current need is to determine how to extend cell life, particularly

Paris-Sud XI, Université de

29

Properties of High Efficiency CIGS Thin Film Solar Cells  

DOE Green Energy (OSTI)

We present experimental results in three areas. Solar cells with an efficiency of 19% have been fabricated with an absorber bandgap in the range of 1.1-1.2 eV. Properties of solar cells fabricated with and without an undoped ZnO layer were compared. The data show that high efficiency cells can be fabricated without using the high-resistivity or undoped ZnO layer. Properties of CIGS solar cells were fabricated from thin absorbers (1 {micro}m) deposited by the three-stage process and simultaneous co-deposition of all the elements. In both cases, solar cells with efficiencies of 16%-17% are obtained.

Ramanathan, K.; Keane, J.; Noufi, R.

2005-02-01T23:59:59.000Z

30

Amorphous silicon/polycrystalline thin film solar cells  

DOE Patents (OSTI)

An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

Ullal, H.S.

1991-03-13T23:59:59.000Z

31

Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells  

E-Print Network (OSTI)

We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

2013-01-01T23:59:59.000Z

32

Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer  

E-Print Network (OSTI)

Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained from higher built-in electric field. Light trapping schemes can increase the effective optical absorption length and thus enhance the electric current for thinner solar cells. Here a new light trapping scheme based on light trapping transparent conducting oxide layer (LT-TCO) is proposed to enhance the performance of thin film solar cells. Three different configurations of integrating the LT-TCO layer in solar cells are proposed and evaluated. This research aims to develop the LT-TCO layer with surface texture and good conductivity by pulsed laser deposition (PLD) technique at low temperature. The LT-TCO layer is fabricated by PLD deposition of Al-doped ZnO to achieve multilayer films by tuning of oxygen pressure. The light trapping effect is examined by optical transmittance measurement and the surface texture is characterized by transmission electron microscopy (TEM) technique. The conductivity of LT-TCO layer is measured by resistivity measurement. Thin film CdTe/CdS solar cells are fabricated by PLD technique to develop baseline solar cells for integration of LT-TCO layer. The as-deposited thin film solar cells show relatively low performance and are further processed with various post-deposition treatments to seek efficiency enhancement. The effects of different processes on cell performance are examined by electrical, optical, and microstructure studies. Air annealing of CdS layer and CdCl2 treatment of CdTe layer combined are found to yield the best cell performance. The fabrication issues that limit the cell performance are discussed and future optimizations in fabrication processes are suggested.

Lu, Tianlin

2011-05-01T23:59:59.000Z

33

Advances in thin-film solar cells for lightweight space photovoltaic power  

SciTech Connect

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuInSe2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuInSe2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

Landis, G.A.; Bailey, S.G.; Flood, D.J.

1989-01-01T23:59:59.000Z

34

Improved Transparent Conducting Oxides Boost Performance of Thin-Film Solar Cells (Fact Sheet)  

DOE Green Energy (OSTI)

Today?s thin-film solar cells could not function without transparent conducting oxides (TCOs). TCOs act as a window, both protecting the cell and allowing light to pass through to the cell?s active layers. Until recently, TCOs were seen as a necessary, but static, layer of a thin-film photovoltaic (PV) cell. But a group of researchers at the National Renewable Energy Laboratory (NREL) has identified a pathway to producing improved TCO films that demonstrate higher infrared transparency. To do so, they have modified the TCOs in ways that did not seem possible a few years ago.

Not Available

2011-02-01T23:59:59.000Z

35

Overview of thick-film technology as applied to solar cells  

DOE Green Energy (OSTI)

Thick-film technology was developed by the electronics industry as a means of fabricating components and miniature circuitry. Today, the solar cell industry is looking at screen printing as an alternate to more expensive, high-vacuum techniques in several of the production steps during the manufacture of silicon solar cells. Screen printing is already fairly well established as a means of providing electrical contact to a cell and for the formation of a back surface field. Now under investigation are the possibilities of non-noble metal contacts and protective and antireflective coatings applied to solar cells by the use of screen printing. Most exciting is the work being done in the non-silicon area on the fabrication of the active layers of a solar cell, using thick-film inks made up of II-VI semiconductors.

Firor, K.; Hogan, S.

1980-01-01T23:59:59.000Z

36

Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells  

DOE Green Energy (OSTI)

This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

Chu, T.L. (University of South Florida, Tampa, FL (United States))

1992-04-01T23:59:59.000Z

37

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells  

E-Print Network (OSTI)

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells. de Bariloche, Argentina 3 ECN Solar Energy, High Tech Campus, Building 5, 5656 AE Eindhoven energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar

Dunin-Borkowski, Rafal E.

38

Novel wide band gap materials for highly efficient thin film tandem solar cells  

SciTech Connect

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PVâ??s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

Brian E. Hardin, Stephen T. Connor, Craig H. Peters

2012-06-11T23:59:59.000Z

39

Solar Energy Materials & Solar Cells 92 (2008) 821829 Modeling the optical properties of WO3 and WO3SiO2 thin films  

E-Print Network (OSTI)

Solar Energy Materials & Solar Cells 92 (2008) 821­829 Modeling the optical properties of WO3 the optical response of the films in the near-UV and visible region: two interband transitions for energies E

Thirumalai, Devarajan

40

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

NONE

1996-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate  

SciTech Connect

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

2006-05-30T23:59:59.000Z

42

Real time intelligent process control system for thin film solar cell manufacturing  

SciTech Connect

This project addresses the problem of lower solar conversion efficiency and waste in the typical solar cell manufacturing process. The work from the proposed development will lead toward developing a system which should be able to increase solar panel conversion efficiency by an additional 12-15% resulting in lower cost panels, increased solar technology adoption, reduced carbon emissions and reduced dependency on foreign oil. All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStratas fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process on-the-fly in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result in about $1.5 Billion in savings by 2015 (at the assumed 20% improvement). This can b

George Atanasoff

2010-10-29T23:59:59.000Z

43

Solar Control Thin Films Laboratory  

NLE Websites -- All DOE Office Websites (Extended Search)

Sputtering equipment Solar Control Thin Films Laboratory The Solar Control Thin Films lab develops novel thin film coatings, deposition technologies, and device systems for...

44

Status of Amorphous and Crystalline Thin Film Silicon Solar Cell Activities  

DOE Green Energy (OSTI)

This paper reviews the recent activities and accomplishments of the national Amorphous Silicon Team and a (crystalline) thin-film-Si subteam that was implemented in 2002 to research solar cell devices based on thin crystalline Si based layers. This paper reports the evolution of team organization, the technical highlights from the recent team meetings, and an outlook on commercialization potential.

von Roedern, B.

2003-05-01T23:59:59.000Z

45

Real time intelligent process control system for thin film solar cell manufacturing  

DOE Green Energy (OSTI)

All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStratas fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process on-the-fly in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result in about $1.5 Billion in savings by 2015 (at the assumed 20% improvement). This can b

George Atanasoff

2010-10-29T23:59:59.000Z

46

Processing and modeling issues for thin-film solar cell devices. Final report  

DOE Green Energy (OSTI)

During the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuIn{sub 1-x}Ga{sub x}Se{sub 2}, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin film deposition. This methodology has led to controlled fabrications of 15% efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping films. Additional accomplishments are listed below.

Birkmire, R.W.; Phillips, J.E. [Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion

1997-11-01T23:59:59.000Z

47

Disilane versus monosilane: a comparison of the properties of glow-discharge a-Si:H films and solar cells  

SciTech Connect

The consequences of using disilane instead of silane for the glow-discharge deposition of a-Si:H solar cells have been studied. Deposition rates were increased fivefold by the use of disilane. The a-Si:H films have a higher hydrogen content, but otherwise are quite similar to silane produced films and possess the same type of gap states. Chlorosilanes, HCl, and oxysilanes were detected in the disilane by mass spectrometry and their influence on film and solar cell properties assessed. The problem of inadvertent dopant tails resulting from the higher deposition rate of the solar cells is identified.

Delahoy, A.E.; Kampas, F.J.; Corderman, R.R.; Vanier, P.E.; Griffith, R.W.

1982-01-01T23:59:59.000Z

48

Disilane versus monosilane: a comparison of the properties of glow-discharge a-Si:H Films and solar cells  

DOE Green Energy (OSTI)

The consequences of using disilane instead of silane for the glow-discharge deposition of a-Si:H solar cells have been studied. Deposition rates were increased fivefold by the use of disilane. The a-Si:H films have a higher hydrogen content, but otherwise are quite similar to silane produced films and possess the same type of gap states. Chlorosilanes, HCl, and oxysilanes were detected in the disilane by mass spectrometry and their influence on film and solar cell properties assessed. The problem of inadvertent dopant tails resulting from the higher deposition rate of the solar cells is identified.

Delahoy, A.E.; Corderman, R.R.; Griffith, R.W.; Kampas, F.J.; Vanier, P.E.

1982-09-01T23:59:59.000Z

49

Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009  

DOE Green Energy (OSTI)

Study using photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission to derive the electronic structure of interfaces in CIGSS and CdTe thin-film solar cells.

Heske, C.

2009-09-01T23:59:59.000Z

50

Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells  

E-Print Network (OSTI)

Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

Sheng, Xing

51

Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750 ..deg..C: Preprint  

Science Conference Proceedings (OSTI)

We report on fabricating film c-Si solar cells on Si wafer templates by hot-wire chemical vapor deposition. These devices, grown at glass-compatible temperatures 500 mV and efficiencies > 5%.

Alberi, K.; Martin, I. T.; Shub, M.; Teplin, C. W.; Iwaniczko, E.; Xu, Y.; duda, A.; Stradin, P.; Johnston, S. W.; Romero, M. J.; Branz, H. M.; Young, D. L.

2009-06-01T23:59:59.000Z

52

Boron arsenide thin film solar cell development. Final report  

DOE Green Energy (OSTI)

Pyrolytic decomposition of diborane and arsine has been used in attempts to grow polycrystalline BAs films. This method, however, produced only amorphous films for deposition temperatures below 920/sup 0/C and polycrystalline boron subarsenide (B/sub 12/As/sub 2/) flms for deposition temperatures above this value. The amorphous films have been determined to have a significant arsenic content but the actual stoichiometry was not obtained. The films were adherent on single crystal sapphire (0001), (111) silicon, (0001) SiC, and polycrystalline SiC but were found not to be adherent to substrates of fused quartz, tungsten, and molybdenum. It was also found that all films deposited above 650/sup 0/C were p-type while those deposited below 600/sup 0/C were usually n-type. Polycrystalline BAs and B/sub 12/As/sub 2/ was produced by reaction of the elements in a closed tube. The amorphous films showed an indirect or non-direct optical bandgap from 1.0 to 1.7 eV with the most probable values between 1.2 to 1.4 eV. The crystalline BAs powder shows a bandgap near 1.0 eV. Photoconductance time constants have been measured for films deposited on (0001) sapphire and (0001) SiC. Attempts at doping the amorphous films were generally unsuccessful. A polycrystalline powder sample was successfully doped with sulfur. Attempts were made to produce a Schottky barrier diode by evaporating Al dots onto an amorphous film on graphite without a post-evaporation anneal. An MIS structure was also attempted by baking an amorphous film in air at 280/sup 0/C before evaporation of aluminum. Although nonlinear characteristics were obtained, none of the devices showed any photovoltaic response. A p-type amorphous film was deposited on an n-type silicon substrate to form a p-n heterojunction. This device did exhibit a photovoltaic response but it is believed that the photogeneration was occurring primarily in the silicon substrate.

Boone, J.L.; Van Doren, T.P.

1980-09-01T23:59:59.000Z

53

Study of Lead Free Ferroelectric Films for New Solar Cells  

SciTech Connect

We report on the deposition by a sol-gel process of Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} and Ba{sub 0.9}Sr{sub 0.1}TiO{sub 3} films on platinum coated silicon substrates. X-Ray diffraction patterns show that the films are (111) preferentially oriented. The surface morphology is smooth, without cracks and the grain size is about 50 nm as determined by AFM and SEM. The dielectric constant measured from 10{sup 2} to 10{sup 6} Hz decreases slightly and is around 400 at 10{sup 4} Hz. The losses are constant in a first approximation for a 1.5 {mu}m thick BST(80/20) film with a value of 0.03 at 10 kHz. The existence of an hysteresis cycle attests that the films, whatever their thickness, are in a ferroelectric state. Pyroelectric coefficients have been determined and the best figure of merit obtained on BST(90/10) at 293 K and 10 kHz is of 149 {mu}C/m{sup 3}/K. The best dielectric and pyroelectric properties (tg{delta} = 0.006 at 1 MHz, tunability = 30%, {gamma} = 340 {mu}C/m{sup 2}/K) were obtained on the 400 nm BST(90/10) film. Work is in progress to characterize the piezoelectric and photovoltaic properties of our BST films.

Fasquelle, D.; Mascot, M.; Carru, J. C. [LEMCEL, Universite du Littoral Cote d'Opale, 50 rue F. Buisson, BP717-62228-Calais-France (France); Hikam, M.; Iriani, Y.; Soegijono, B. [Department of Physics, Faculty of Mathematics and Sciences, University of Indonesia, Depok 16424 Indonesia (Indonesia)

2009-09-14T23:59:59.000Z

54

Large-area Silicon-Film{trademark} panels and solar cells  

DOE Green Energy (OSTI)

This report describes AstroPower`s success in improving its material and processing capabilities during the first phase of this 3-year contract through the Photovoltaic Manufacturing Technology (PVMaT) program. Key results include the demonstration of a 14.6%-efficient Silicon-Film{trademark} solar cell. This laboratory result (1.0 cm{sup 2}) provides the direction needed to develop and optimize continuous, in-line production processes. The continuous nature of the Silicon-Film{trademark} sheet fabrication process is being extended into the solar-cell processing sequence. Plans are in place to make the wafer cleaning, gettering, and diffusion steps all continuous during the scope of this program.

Rand, J.A.; Barnett, A.M.; Checchi, J.C. [AstroPower, Inc., Newark, DE (United States)] [and others

1997-01-01T23:59:59.000Z

55

High efficiency thin film CdTe and a-Si based solar cells  

DOE Green Energy (OSTI)

This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10{sup {minus}5} torr) was beneficial for growing high-quality films from ITO targets.

Compaan, A. D.; Deng, X.; Bohn, R. G.

2000-01-04T23:59:59.000Z

56

Group I-III-VI.sub.2 semiconductor films for solar cell application  

SciTech Connect

This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.

Basol, Bulent M. (Redondo Beach, CA); Kapur, Vijay K. (Northridge, CA)

1991-01-01T23:59:59.000Z

57

EE580 Solar Cells Todd J. Kaiser  

E-Print Network (OSTI)

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 06 · Solar Cell Materials & Structures 1Montana State University: Solar Cells Lecture 6: Solar Cells Solar Cell Technologies · A) Crystalline Silicon · B) Thin Film · C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6: Solar

Kaiser, Todd J.

58

Thin film polycrystalline silicon solar cells. Second technical progress report, July 16, 1980-October 15, 1980  

DOE Green Energy (OSTI)

The objectives of this contract are to fabricate large area thin film silicon solar cells with AM1 efficiency of 10% or greater with good reproducibility and good yield and to assess the feasibility of implementing this process for manufacturing solar cells at a cost of $300/kWe. Efforts have been directed to the purification of metallurgical silicon, the preparation and characterization of substrates and epitaxial silicon layers, and the fabrication and characterization of solar cells. The partial purification of metallurgical silicon by extraction with aqua regia has been further investigated in detail, and the resulting silicon was analyzed by the atomic absorption technique. The unidirectional solidification of aqua regia-extracted metallurgical silicon on graphite was used for the preparation of substrates, and the impurity distribution in the substrate was determined and compared with the impurity content in metallurgical silicon. The effects of heat treatment on the impurity distribution in the substrate and in the epitaxial layer have also been investigated. Large area (30 to 60 cm/sup 2/) solar cells have been prepared from aqua regia-extracted metallurgical silicon substrates by depositing a p-n junction structure using the thermal reduction of trichlorosilane containing appropriate dopants. The AM1 efficiencies are about 9% for cells of 30 to 35 cm/sup 2/ area. Larger area, 60 cm/sup 2/, thin film solar cells have been fabricated for the first time, and their AM1 efficiencies are slightly higher than 8%. The spectral response, minority carrier diffusion length, and I/sub sc/-V/sub oc/ relation in a number of solr cells have been measured.

None

1980-10-01T23:59:59.000Z

59

Thin Film Solar Cells Derived from Sintered Semiconductor Quantum Dots: Cooperative Research and Development Final Report, CRADA number CRD-07-00226  

Science Conference Proceedings (OSTI)

The NREL/Evident team will develop techniques to fabricate thin film solar cells where the absorption layers comprising the solar cells are derived from sintered semiconductor quantum dots.

Ginley, D. S.

2010-07-01T23:59:59.000Z

60

Indium phosphide/cadmium sulfide thin-film solar cells. Semiannual report, July 1980-December 1980  

DOE Green Energy (OSTI)

InP thin films were deposited by planar reactive deposition on recyrstallized CdS (RXCdS) and semi-insulating (100) InP substrates and evaluated as potential layers for an all-thin-film solar cell. Films prepared on RXCdS at approximately 330/sup 0/C contained a mixture of grains having both large and submicron lateral dimensions. SIMS analysis showed the interdiffusion profiles to be well behaved and, within the resolution of the analysis, no significant difference in the profiles between structures prepared at 330/sup 0/C and 380/sup 0/C. Be-doped epitaxial films, deposited on semi-insulating InP at 330/sup 0/C, showed both n- and p-type behavior. Films prepared at higher and lower temperatures with a freshly Be-charged In source were p-type and n-type, respectively; the n-type behavior is associated with an excess of n-type native defects. SIMS analyses confirmed the presence of Be in all Be-doped films. Growth with deviation from stoichiometry was initiated at 330/sup 0/C to reduce the concentration of native defects. Growth of Be-doped films at higher substrate temperature with the same Be-doped source after several runs eventually resulted in n-type films. Analyses of the In source and films were initiated to determine the cause of the transient doping. As an alternative to Be doping, p-type Zn-doped InP films were prepared on InP semi-insulating substrates with room-temperature carrier concentration and mobilities of 6 x 10/sup 16/ cm/sup -3/, and 80 cm/sup 2//Vsec, respectively.

Zanio, K.

1981-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Photoelectrochemical investigation of ultrathin film iron oxide solar cells prepared by atomic layer deposition.  

Science Conference Proceedings (OSTI)

Atomic layer deposition was used to grow conformal thin films of hematite with controlled thickness on transparent conductive oxide substrates. The hematite films were incorporated as photoelectrodes in regenerative photoelectrochemical cells employing an aqueous [Fe(CN){sub 6}]{sup 3-/4-} electrolyte. Steady state current density versus applied potential measurements under monochromatic and simulated solar illumination were used to probe the photoelectrochemical properties of the hematite electrodes as a function of film thickness. Combining the photoelectrochemical results with careful optical measurements allowed us to determine an optimal thickness for a hematite electrode of {approx}20 nm. Mott-Schottky analysis of differential capacitance measurements indicated a depletion region of {approx}17 nm. Thus, only charge carriers generated in the depletion region were found to contribute to the photocurrent.

Klahr, B. M.; Martinson, A. B. F.; Hamann, T. W. (Materials Science Division); (Michigan State Univ.)

2011-01-01T23:59:59.000Z

62

CdS/CdTe Thin-Film Solar Cell with a Zinc Stannate Buffer Layer  

DOE Green Energy (OSTI)

This paper describes an improved CdS/CdTe polycrystalline thin-film solar-cell device structure that integrates a zinc stannate (Zn2SnO4 or ZTO) buffer layer between the transparent conductive oxide (TCO) layer and the CdS window layer. Zinc stannate films have a high bandgap, high transmittance, low absorptance, and low surface roughness. In addition, these films are chemically stable and exhibit higher resistivities that are roughly matched to that of the CdS window layer in the device structure. Preliminary device results have demonstrated that by integrating a ZTO buffer layer in both SnO2-based and Cd2SnO4 (CTO)-based CdS/CdTe devices, performance and reproducibility can be significantly enhanced

Wu, X.; Sheldon, P.; Mahathongdy, Y.; Ribelin, R.; Mason, A.; Moutinho, H. R.; Coutts, T. J.

1998-10-28T23:59:59.000Z

63

22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS: COMPARATIVE LIFE-CYCLE ANALYSIS OF BUFFER LAYERS Vasilis M. Fthenakis and Hyung Chul Kim National Photovoltaic EH&S Research Center Brookhaven National Laboratory Upton, NY 11973, USA ABSTRACT

64

Method and making group IIB metal - telluride films and solar cells  

DOE Patents (OSTI)

A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film (12) and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed.

Basol, Bulent M. (Redondo Beach, CA); Kapur, Vijay K. (Northridge, CA)

1990-08-21T23:59:59.000Z

65

Amorphous silicon solar cells  

SciTech Connect

The fabrication, performance, and applications of a-Si solar cells are discussed, summarizing the results of recent experimental investigations and trial installations. Topics examined include the fundamental principles and design strategies of solar power installations; the characteristics of monocrystalline-Si solar cells; techniques for reducing the cost of solar cells; independent, linked, and hybrid solar power systems; proposed satellite solar power systems; and the use of solar cells in consumer appliances. Consideration is given to the history of a-Si, a-Si fabrication techniques, quality criteria for a-Si films, solar cells based on a-Si, and techniques for increasing the efficiency and lowering the cost of a-Si solar cells. Graphs, diagrams, drawings, and black-and-white and color photographs are provided. 136 references.

Takahashi, K.; Konagai, M.

1986-01-01T23:59:59.000Z

66

Low resistance thin film organic solar cell electrodes  

SciTech Connect

A method which lower the series resistance of photosensitive devices includes providing a transparent film of a first electrically conductive material arranged on a transparent substrate; depositing and patterning a mask over the first electrically conductive material, such that openings in the mask have sloping sides which narrow approaching the substrate; depositing a second electrically conductive material directly onto the first electrically conductive material exposed in the openings of the mask, at least partially filling the openings; stripping the mask, leaving behind reentrant structures of the second electrically conductive material which were formed by the deposits in the openings of the mask; after stripping the mask, depositing a first organic material onto the first electrically conductive material in between the reentrant structures; and directionally depositing a third electrically conductive material over the first organic material deposited in between the reentrant structures, edges of the reentrant structures aligning deposition so that the third electrically conductive material does not directly contact the first electrically conductive material, and does not directly contact the second electrically conductive material.

Forrest, Stephen (Princeton, NJ); Xue, Jiangeng (Piscataway, NJ)

2008-01-01T23:59:59.000Z

67

Film Si Solar Cells with Nano Si: Cooperative Research and Development Final Report, CRADA Number CRD-09-00356  

DOE Green Energy (OSTI)

Nevada Nanotechnology Center and Si group at NREL will work together to develop a-Si based solar cells with nano-Si technique. We will explore the existing a-Si based film solar cell technology at NREL and nano scale Si technology at Nevada Nanotechnology Center. By exchanging information, we will come; up with some new cell structures using nano-Si. We expect the new a-Si based cells will have optical enhancement or better electronic or optical properties of absorber layer to improve solar cell performance.

Wang, Q.

2011-05-01T23:59:59.000Z

68

Design, construction and testing of a high-vacuum anneal chamber for in-situ crystallisation of silicon thin-film solar cells.  

E-Print Network (OSTI)

??Thin-film solar cells on glass substrates are likely to have a bright future due to the potentially low costs and the short energy payback times. (more)

Weber, Jrgen Wolfgang

2006-01-01T23:59:59.000Z

69

Development of economical improved thick film solar cell contact. Final report, September 1978-April 1979  

DOE Green Energy (OSTI)

The potential for economy and efficiency has been demonstrated for the thick film metallization process using screen printing for solar cell electrodes. However, process reliability and materials economy remain deficient. It is believed that these deficiencies can be removed by the use of ink formulations designed specifically for silicon solar cells, departing from ceramic technology tradition and utilizing all metal systems. The objectives of this investigation are as follows: 1) eliminate the glass frit which has been the conventional liquid phase sintering medium and adhesive for metallization inks; 2) provide an appropriate metal which can serve as the liquid phase sintering medium; 3) find a chemical constituent which effectively removes the native oxide from the silicon during the firing step, which can be made part of the ink, and which either becomes fugitive or remains an inert part of the matured metallization; and 4) maintain cognizance of the cost objectives of the LSA Project in selecting materials and processes. Progress is reported. (WHK)

Ross, B.

1979-04-01T23:59:59.000Z

70

Commercialization of a thick film solar cell. Quarterly technical progress report, January 1, 1980-March 31, 1980  

DOE Green Energy (OSTI)

Initial problems encountered in the screen printing of CdS films related to an undesirable surface texture on the film surface have been resolved by modification of ink rheology. Improvements have been made in CdS films through modification in firing conditions, ink composition, and fluxing. The CdS 13 micron thick films are devoid of through pores and have a resistivity of 1.65 ohm cm. A laser probe technique was developed to determine macro variations in solar cell films.

McDonald, G.D.

1980-01-01T23:59:59.000Z

71

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint  

DOE Green Energy (OSTI)

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-07-01T23:59:59.000Z

72

Thin film polycrystalline silicon solar cells. Quarterly report No. 1, October 1-December 31, 1979  

DOE Green Energy (OSTI)

The MoSi/sub 2/ separation layer growth rate has been studied as a function of time and temperature. The presence of small amounts of O/sub 2/ in the silicon deposition ambient were found to inhibit the growth rate of the MoSi/sub 2/ layer and also to affect the reliability of shear separation. Void formation in silicon at the Si-MoSi/sub 2/ interface, due predominantly to diffusion of silicon through the MoSi/sub 2/ layer was observed. This is believed to be responsible for shear separation occurring in the silicon film. Gas chromatograhic procedures were developed for characterizing the silicon deposition process. Coherent twin bundles in the grain-enhanced silicon films were not found to adversely influence solar cell efficiency. Several 1 cm x 2 cm solar cells were fabricated. Performance characteristics of these cells are discussed; the best device had a conversion efficiency of 10.7% (under simulated AM1 illumination) with V/sub OC/ = 0.545 V, J/sub SC/ = 28.65 mA/cm/sup 2/ and FF = 68.3%.

Sarma, K.R.; Rice, M.J.; Legge, R.

1979-01-01T23:59:59.000Z

73

CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments  

Office of Scientific and Technical Information (OSTI)

National Renewable Energy Laboratory National Renewable Energy Laboratory Innovation for Our Energy Future A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 Conference Paper NREL/CP-520-37020 January 2005 CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments K. Ramanathan, R.N. Bhattacharya, M.A. Contreras, F.S. Hasoon, J. Abushama, and R. Noufi Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting October 25-28, 2004 Denver, Colorado NOTICE The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337. Accordingly, the US

74

Dark Current Transients in Thin-Film CdTe Solar Cells: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the Dark current transients measured by changing the voltage bias in a stepwise fashion on CdTe cells results in minutes-long transients after each step. Transients measured at room temperature are controlled by carrier trapping that corresponds to the well known voltage transient phenomena[1]. Transients measured on the same CdTe cell at elevated temperature (60C and 90C) show a much slower decay process. We associate this physical process with''shunt'' current paths induced with reverse bias and removed with forward bias. A different back contact process may produce an opposite voltage dependence. The lack of these transients may be required for the fabrication of ''stable'' thin-film CdTe solar cells.

McMahon, T. J.

2002-05-01T23:59:59.000Z

75

CIGSS Thin Film Solar Cells: Final Subcontract Report, 10 October 2001-30 June 2005  

DOE Green Energy (OSTI)

This report describes the I-III-VI2 compounds that are developing into a promising material to meet the energy requirement of the world. CuInSe2 (CIS) and its alloy with Ga and S have shown long-term stability and highest conversion efficiency of 19.5%. Among the various ways of preparing CuIn1-xGaxSe2-ySy (CIGSS)/CdS thin-film solar cells, co-evaporation and sputtering techniques are the most promising. Sputtering is an established process for very high-throughput manufacturing. ARCO Solar, now Shell Solar, pioneered the work in CIS using the sputtering technique. The two-stage process developed by ARCO Solar involved sputtering of a copper and indium layer on molybdenum-coated glass as the first step. In the second step, the copper-indium layers were exposed to a selenium-bearing gas such as hydrogen selenide (H2Se) mixed with argon. The hydrogen selenide breaks down and leaves selenium, which reacts and mixes with the copper and indium in such a way to produce very high-quality CIS absorber layer. Sputtering technology has the added advantage of being easily scaled up and promotes roll-to-roll production on flexible substrates. Preliminary experiments were carried out. ZnO/ZnO:Al deposition by RF magnetron sputtering and CdS deposition by chemical-bath deposition are being carried out on a routine basis.

Dhere, N. G.

2006-02-01T23:59:59.000Z

76

Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209  

DOE Green Energy (OSTI)

NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

Sopori, B.

2013-03-01T23:59:59.000Z

77

Survey of Development of CZTS-based Thin Film Solar Cells  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2013 TMS Annual Meeting & Exhibition. Symposium , Alloys and Compounds for Thermoelectric and Solar Cell Applications.

78

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells  

DOE Green Energy (OSTI)

This document describes the progress made in obtaining stable, a-Si-based submodules that have a large area and high efficiency. Conversion efficiencies of up to 11.95% were obtained in small-area, single-junction a-Si solar cells using textured TiO{sub 2}, superlattice p-layers, graded carbon concentrations near the p/i interface, and highly reflective ITO/silver back contacts. Single- junction a-SiC and a-SiGe p-i-n cells were also fabricated that had conversion efficiencies of 9%--11%, and some recently fabricated stacked-junction cells had conversion efficiencies of about 10%. In materials research boron-doped microcrystalline SiC films were recently developed containing up to 6 at. % carbon with conductivities of 3 {times} 10{sup {minus}3}/{Omega}-cm at room temperature and activation energies of 0.11 eV. Microcrystalline film growth was shown to be strongly influenced by the nature of the substrate, with nucleation occurring more readily on a-Si substrates than on TiO{sub 2}. Stability studies show that light-induced degradation is usually enhanced by the presence of carbon grading near the p/i interface. In general, adding either germanium (from GeH{sub 4}) or carbon (from CH{sub 4}) to the i-layer of a p-i-n cell leads to enhanced light-induced degradation. 13 refs., 80 figs., 17 tabs.

Catalano, A.W.; Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; D'Aiello, R.V.; Dickson, C.R.; Fortmann, C.M.; Goldstein, B.; McVeigh, J.; Morris, J.; Newton, J.L.; Wiedeman, S. (Solarex Corp., Newtown, PA (USA). Thin Film Div.)

1989-10-01T23:59:59.000Z

79

Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels  

E-Print Network (OSTI)

This work addresses the integration of reflectarray antennas (RA) on thin film Solar Cell (SC) panels, as a mean to save real estate, weight, or cost in platforms such as satellites or transportable autonomous antenna systems. Our goal is to design a good RA unit cell in terms of phase response and bandwidth, while simultaneously achieving high optical transparency and low microwave loss, to preserve good SC and RA energy efficiencies, respectively. Since there is a trade-off between the optical transparency and microwave surface conductivity of a conductor, here both standard copper and transparent conductors are considered. The results obtained at the unit cell level demonstrates the feasibility of integrating RA on a thin-film SC, preserving for the first time good performance in terms of both SC and RA efficiency. For instance, measurement at X-band demonstrate families of cells providing a phase range larger than 270{\\deg} with average microwave loss of -2.45dB (resp. -0.25dB) and average optical transpa...

Dreyer, Philippe; Nicolay, Sylvain; Ballif, Christophe; Perruisseau-Carrier, Julien

2013-01-01T23:59:59.000Z

80

Advanced processing technology for high-efficiency, thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 March 1993--28 February 1994  

Science Conference Proceedings (OSTI)

This annual report details activities in research on advanced processing technology for high-effiency, thin-film solar cells.

Morel, D.L.; Ferekides, C.S. [University of South Florida, Tampa, FL (United States)

1994-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Research on polycrystalline thin-film CuGaInSe[sub 2] solar cells  

DOE Green Energy (OSTI)

This report describes research to fabricate high-efficiency CdZnS/CuInGaSe[sub 2] (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm[sup 2]-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd[sub 0.82]Zn[sub 0.18]S/CuIn[sub 0.80]Ga[sub 0.20]Se[sub 2] cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V[sub oc] = 0.581 V, J[sub sc] = 34.8 mA/cm[sup 2], FF = 0.728, and a cell area of 0.979 cm[sup 2].

Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W. (Boeing Co., Seattle, WA (United States). Defense and Space Systems Group)

1992-11-01T23:59:59.000Z

82

Diffraction: Enhanced Light Absorption of Solar Cells and ...  

Solar and Renewable Energy Photovoltaic Thin-film Solar Cells Space Solar Cells Polarization-Dependent Photodetectors BENEFITS Improved performance of

83

High-efficiency cadmium and zinc-telluride-based thin-film solar cells  

DOE Green Energy (OSTI)

This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

Rohatgi, A.; Sudharsanan, R.; Ringel, S. (Georgia Inst. of Tech., Atlanta, GA (United States))

1992-02-01T23:59:59.000Z

84

Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1993--January 15, 1994  

DOE Green Energy (OSTI)

The overall objective of the research presented in this report is to advance the development and acceptance of thin-film photovoltaic modules by increasing the understanding of film growth and processing and its relationship to materials properties and solar cell performance. The specific means toward meeting this larger goal include: (1) investigating scalable, cost-effective deposition processes; (2) preparing thin-film materials and device layers and completed cell structures; (3) performing detailed material and device analysis; and (4) participating in collaborative research efforts that address the needs of PV-manufacturers. These objectives are being pursued with CuInSe{sub 2}, CdTe and a-Si based solar cells.

Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N.; Yokimcus, T.A. [Institute of Energy Conversion, Newark, DE (United States)

1994-09-01T23:59:59.000Z

85

Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750 ..deg..C: Preprint  

SciTech Connect

We report on fabricating film c-Si solar cells on Si wafer templates by hot-wire chemical vapor deposition. These devices, grown at glass-compatible temperatures < 750..deg..C, demonstrate open-circuit voltages > 500 mV and efficiencies > 5%.

Alberi, K.; Martin, I. T.; Shub, M.; Teplin, C. W.; Iwaniczko, E.; Xu, Y.; duda, A.; Stradin, P.; Johnston, S. W.; Romero, M. J.; Branz, H. M.; Young, D. L.

2009-06-01T23:59:59.000Z

86

Development of copper sulfide/cadmium sulfide thin-film solar cells  

DOE Green Energy (OSTI)

The purpose of this work has been to identify aspects of cell fabrication and treatment which are critical for achieving high efficiency Cu/sub 2/S/CdS solar cells. In approaching the problem several comparisons were made of the effects of specific steps in two methods of cell fabrication. These methods had previously given cells of about 6% and a maximum of 9% efficiency. Three areas requiring special attention and specific means to achieve acceptable results were identified. (1) The Cu/sub 2/S/CdS heterojunction area must be minimized. If single source evaporations of CdS are made on substrates whose temperatures (approx. 220/sup 0/C) are monitored and controlled using welded thermocouples, the CdS films will have adequately large grains (grain diameter greater than or equal to 2 ..mu..m) and will not develop significant etch pits during texturing in a mild etchant solution. (2) The termination of the wet barrier processing steps must be done carefully. An acceptable termination involves minimizing the amount of cuprous chloride retained on the cell surface during transfer to a rinsing stage while providing adequate exclusion of air from the space above the surface of the cuprous chloride solution. (3) Once formed, the Cu/sub 2/S layer should not be exposed to high temperatures (>100/sup 0/C) for long periods of time (> 5 min) if surface adsorbed moisture or oxygen are present. Heat treatments in ampoules under flowing hydrogen atmospheres should be preceded and followed by periods of at least 30 minutes at room temperature in the reducing ambient. If all these precautions are taken, wet chemical barrier processing of thermally evaporated CdS films on zinc-plated copper foil substrates yields cells of nearly 8% conversion efficiency without AR coating.

Szedon, J.R.; Biter, W.J.; Abel, J.A.; Dickey, H.C.; Shirland, F.A.

1981-02-27T23:59:59.000Z

87

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance  

Science Conference Proceedings (OSTI)

We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

2012-05-05T23:59:59.000Z

88

Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report  

DOE Green Energy (OSTI)

During the past year, Colorado School of Mines (CSM) researchers performed systematic studies of the growth and properties of electrodeposition CdS and back-contact formation using Cu-doped ZnTe, with an emphasis on low Cu concentrations. CSM also started to explore the stability of its ZnTe-Cu contacted CdTe solar cells. Researchers investigated the electrodeposition of CdS and its application in fabricating CdTe/CdS solar cells. The experimental conditions they explored in this study were pH from 2.0 to 3.0; temperatures of 80 and 90 C; CdCl{sub 2} concentration of 0.2 M; deposition potential from {minus}550 to {minus}600 mV vs. Ag/AgCl electrode; [Na{sub 2}S{sub 2}O{sub 4}] concentration between 0.005 and 0.05 M. The deposition rate increases with increase of the thiosulfate concentration and decrease of solution pH. Researchers also extended their previous research of ZnTe:Cu films by investigating films doped with low Cu concentrations (< 5 at. %). The low Cu concentration enabled them to increase the ZnTe:Cu post-annealing temperature without causing excessive Cu diffusion into CdTe or formation of secondary phases. The effects of Cu doping concentration and post-deposition annealing temperature on the structural, compositional, and electrical properties of ZnTe were studied systematically using X-ray diffraction, atomic force microscopy, electron microprobe, Hall effect, and conductivity measurements.

Trefny, J.U.; Mao, D. [Colorado School of Mines, Golden, CO (United States). Dept. of Physics

1998-01-01T23:59:59.000Z

89

Thin film gallium arsenide solar cell research. Third quarterly project report, September 1, 1980-November 30, 1980. [Antireflection coating  

DOE Green Energy (OSTI)

The major objective of this contract is to produce gallium arsenide solar cells of 10% conversion efficiency in films of less than 10 micrometers thick which have been deposited by chemical vapor deposition on graphite or tungsten coated graphite substrates. Major efforts during this quarter were directed to: (1) the optimization of the deposition of gallium arsenide films of 10 ..mu..m thickness or less on tungsten/graphic substrates, (2) the investigation of the effectiveness of various grain boundary passivation techniques, (3) the deposition of tantalum pentoxide by ion beam sputtering as an antireflection coating, (4) the deposition of gallium aluminium arsenide by the organometallic process, and (5) the fabrication and characterization of large area Schottky barrier type solar cells from gallium arsenide films of about 10 ..mu..m thickness. Various grain boundary passivation techniques, such as the anodic oxidation, thermal oxidation, and ruthenium treatment, have been investigated. The combination of thermal oxidation and ruthenium treatment has been used to fabricate Schottky barrier type solar cells. Large area MOS solar cells of 9 cm/sup 2/ area with AMl efficiency of 8.5% have been fabricated from ruthenium treated gallium arsenide films of 10 ..mu..m thickness. The construction of the apparatus for the deposition of gallium aluminum arsenide by the organometallic process has been completed. The deposition of good quality tantalum pentoxide film as an antireflection coating has been carried out by the ion beam sputtering technique. The short-circuit current density and AMl efficiency of the solar cells are increased by approximately 60%, with a slight increase in the open-circuit voltage. Details are presented. (WHK)

Chu, S. S.

1980-12-01T23:59:59.000Z

90

High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges  

Science Conference Proceedings (OSTI)

Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se{sub 2} (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. These two thin-film technologies have a common device/module structure: substrate, base electrode, absorber, junction layer, top electrode, patterning steps for monolithic integration, and encapsulation. The monolithic integration of thin-film solar cells can lead to significant manufacturing cost reduction compared to crystalline Si technology. The CdTe and CIGS modules share common structural elements. In principle, this commonality should lead to similar manufacturing cost per unit area, and thus, the module efficiency becomes the discriminating factor that determines the cost per watt. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

Noufi, R.; Zweibel, K.

2006-01-01T23:59:59.000Z

91

Solar photovoltaic technology: The thin film option  

DOE Green Energy (OSTI)

Photovoltaics (PV) the direct conversion of sunlight to electricity was first discovered by scientists at the Bell Labs in 1954. In the late 1960's and 1970's most of the solar cell technology has been used for space applications to power satellites. The main work horse for the PV technology has been crystalline silicon (Si) solar cells. Over the past 15 years this has led to cost reduction from $35/kWh to about $0.30/kWh at the present time. Demonstrated reliability of 20 years or more has resulted in acceptance by several utilities. However, cost reductions in crystalline Si solar cells have been limited by the cost of wafering of ingots and the attendant loss of material. A number of Si sheet solar cells are also being investigated. In the past decade the emphasis of the research and development effort has been focused on thin film solar cells, which have the potential for generating power at much lower cost of $1-2/Wp. Thin film solar cells that are presently being investigated and are generating global attention are: amorphous silicon (a-Si:H), cadmium telluride (CdTe), and copper indium diselenide (CuInSe/sub 2,/ or CIS). In the past few years, considerable progress has been; made by all three of these thin film solar cells. This paper reviews the current status and future potential of these exiting thin film solar cell technologies.

Ullal, H.S.; Zweibel, K.; Sabisky, E.S.; Surek, T.

1988-01-01T23:59:59.000Z

92

Large-area Silicon-Film{trademark} panels and solar cells. Phase 2 technical report, January 1996--December 1996  

DOE Green Energy (OSTI)

The Silicon-Film{trademark} process is on an accelerated path to large-scale manufacturing. A key element in that development is optimizing the specific geometry of both the Silicon-Film{trademark} sheet and the resulting solar cell. That decision has been influenced by cost factors, engineering concerns, and marketing issues. The geometry investigation has focused first on sheet nominally 15 cm wide. This sheet generated solar cells with areas of 240 cm{sup 2} and 675 cm{sup 2}. Most recently, a new sheet fabrication machine was constructed that produces Silicon-Film{trademark} with a width in excess of 30 cm. Test results have indicated that there is no limit to the width of sheet generated by this process. The new wide material has led to prototype solar cells with areas of 300, 400, and 1,800 cm{sup 2}. Significant advances in solar-cell processing have been developed in support of fabricating large-area devices, including uniform emitter diffusion and anti-reflection coatings.

Rand, J.A.; Barnett, A.M.; Checchi, J.C.; Culik, J.S.; Collins, S.R.; Ford, D.H.; Hall, R.B.; Jackson, E.L.; Kendall, C.L. [AstroPower Inc., Newark, DE (United States)

1997-03-01T23:59:59.000Z

93

Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin-Film Solar Cells: Preprint  

DOE Green Energy (OSTI)

The stability of intrinsic and Al-doped single- and bi-layer ZnO for thin-film CuInGaSe2 solar cells, along with Al-doped Zn1-xMgxO alloy and Sn-doped In2O3 (ITO) and F-doped SnO2, was evaluated by direct exposure to damp heat (DH) at 85oC and 85% relative humidity. The results show that the DH-induced degradation rates followed the order of Al-doped ZnO and Zn1-xMgxO >> ITO > F:SnO2. The degradation rates of Al:ZnO were slower for films of higher thickness, higher substrate temperature in sputter-deposition, and with dry-out intervals. As inferred from the optical micro-imaging showing the initiation and propagation of degrading patterns and regions, the degradation behavior appears similar for all TCOs, despite the obvious difference in the degradation rate. A degradation mechanism is proposed to explain the temporal process involving thermal hydrolysis.

Pern, F. J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

2008-05-01T23:59:59.000Z

94

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network (OSTI)

solar cells enable very high photovoltaic efficiencies by virtue of employing different band gap to increase the short circuit current and the photovoltaic efficiency of solar cells. INTRODUCTION Multi-junction solar cells based on III-V compound semiconductors are the most efficient photovoltaic devic- es

Heaton, Thomas H.

95

Cu(In,Ga)Se2 Thin-Film Concentrator Solar Cells: Preprint  

DOE Green Energy (OSTI)

Presented at the 2001 NCPV Program Review Meeting: CIGS cells were designed for operation under concentrated sunlight. This is first report of polycrystalline thin-film cell with efficiency>20%.

Ward, J.; Ramanathan, K.; Hasoon, F.; Coutts, T.; Keane, J.; Moriarty, T; Noufi, R.

2001-10-01T23:59:59.000Z

96

Processing and modeling issues for thin-film solar cell devices: Annual subcontract report, January 16, 1995 -- January 15, 1996  

DOE Green Energy (OSTI)

The overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this four-year NREL subcontract are to advance the state of the art and the acceptance of thin film PV modules in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe{sub 2} and its alloys, on a-Si and its alloys, and on CdTe. In the area of CuInSe{sub 2} and its alloys, EEC researchers have produced CuIn{sub 1-x}GaxSe{sub 2} films by selenization of elemental and alloyed films with H{sub 2}Se and Se vapor and by a wide variety of process variations employing co-evaporation of the elements. Careful design, execution and analysis of these experiments has led to an improved understanding of the reaction chemistry involved, including estimations of the reaction rate constants. Investigation of device fabrication has also included studies of the processing of the Mo, US and ZnO deposition parameters and their influence on device properties. An indication of the success of these procedures was the fabrication of a 15% efficiency CuIn{sub 1-x}GaxSe{sub 2} solar cell.

Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Eser, E.; Hegedus, S.S.; McCandless, B.E.; Meyers, P.V.; Shafarman, W.N. [Univ. of Delaware, Newark, DE (United States)

1996-08-01T23:59:59.000Z

97

Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint  

DOE Green Energy (OSTI)

We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

2012-06-01T23:59:59.000Z

98

Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

Mickelsen, R.A.; Chen, W.S.

1985-08-13T23:59:59.000Z

99

Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint  

Science Conference Proceedings (OSTI)

We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

2012-06-01T23:59:59.000Z

100

Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

Mickelsen, R.A.; Chen, W.S.

1982-06-15T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
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101

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1985-01-01T23:59:59.000Z

102

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1982-01-01T23:59:59.000Z

103

Thin-film polycrystalline silicon solar cells. Quarterly report no. 3, October 16, 1980-January 15, 1981  

DOE Green Energy (OSTI)

The objectives of the project are: 1) to develop cell fabrication procedures to further define the maximum capabilities of the conducting oxide/silicon heterojunction solar cells; 2) to optimize the spray fabrication technique for making reproducible high efficiency cells; 3) to assess the stability and the projected lifetime of the cell structure; 4) to identify through appropriate measurements the effects of grain boundaries and intragrain defects on the electronic transport mechanisms in thin-film polycrystalline silicon; and 5) to determine the feasibility of a large-scale fabrication process. Progress is reported.

Ghosh, A. K.; Feng, T.; Eustace, D. J.; Maruska, H. P.

1981-01-01T23:59:59.000Z

104

Solar Energy Materials & Solar Cells 91 (2007) 17261732 Optical and structural properties of Ta2O5CeO2 thin films  

E-Print Network (OSTI)

Solar Energy Materials & Solar Cells 91 (2007) 1726­1732 Optical and structural properties of Ta2O5

Thirumalai, Devarajan

105

Novel R2R Manufacturable Photonic-Enhanced Thin Film Solar Cells; January 28, 2010 -- January 31, 2011  

DOE Green Energy (OSTI)

Final subcontract report for PV Incubator project 'Novel R2R Manufacturable Photonic-Enhanced Thin Film Solar Cells.' The goal of this program was to produce tandem Si cells using photonic bandgap enhancement technology developed at ISU and Lightwave Power that would have an NREL-verified efficiency of 7.5% on 0.25 cm{sup 2} area tandem junction cell on plastic substrates. This goal was met and exceeded within the timeframe and budget of the program. On smaller area cells, the efficiency was even higher, {approx}9.5% (not verified by NREL). Appropriate polymers were developed to fabricate photonic and plasmonic devices on stainless steel, Kapton and PEN substrates. A novel photonic-plasmon structure was developed which shows a promise of improving light absorption in thin film cells, a better light absorption than by any other scheme.

Slafer, D.; Dalal, V.

2012-03-01T23:59:59.000Z

106

Thin Film Solar Technologies | Open Energy Information  

Open Energy Info (EERE)

Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon Thin Film Solar Technologies Jump to: navigation, search Name Thin Film Solar Technologies...

107

Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008  

DOE Green Energy (OSTI)

This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

Olsen, L. C.

2010-03-01T23:59:59.000Z

108

Light trapping in thin film solar cells using textured photonic crystal  

DOE Patents (OSTI)

A solar cell includes a photoactive region that receives light. A photonic crystal is coupled to the photoactive region, wherein the photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light.

Yi, Yasha (Somerville, MA); Kimerling, Lionel C. (Concord, MA); Duan, Xiaoman (Amesbury, MA); Zeng, Lirong (Cambridge, MA)

2009-01-27T23:59:59.000Z

109

Heterojunction solar cells  

DOE Green Energy (OSTI)

A qualitative description of semiconductor/semiconductor heterojunction solar cells is given. The two groups of heterojunctions of greatest economic potential, very highly efficient cells for concentrator applications and moderately efficient thin film cells for flat plates, are described with examples. These examples illustrate the role of heterojunctions in surface passivation, monolithic multijunction devices, devices with semiconductors of only one conductivity type, and low-temperature fabrication techniques.

Wagner, S.

1978-01-01T23:59:59.000Z

110

High efficiency thin-film GaAs solar cells. First interim report, March 1--August 30, 1977  

DOE Green Energy (OSTI)

The objective is to demonstrate the feasibility of producing high-efficiency (15% or greater) thin-film GaAs solar cells with costs suitable for terrestrial solar electric power generation. The approach is that of growing GaAs by organio-metallic chemical vapor deposition on recrystallized germanium (Ge) films previously deposited on metal substrates and fabricating AMOS (Antireflecting Metal-Oxide-Semiconductor) solar cells on the GaAs. Previously it had been determined that a water vapor-grown native oxide (temperature = 25/sup 0/C) was the most useful native oxide for AMOS cells. A new chemical surface preparation prior to oxide growth led to more uniform oxides and reduced interface contamination, yielding lower reverse saturation current densities, a near-unity diode ideality factor, and better reproducibility. Substituting silver (Ag) for gold metallization showed no change in starting cell efficiency, but did greatly improve high temperature stability of the AMOS solar cell. A new study was completed on antireflection coatings on AMOS GaAs solar cells, taking into account the spectral response of the cell and nature of the solar spectra, and the results submitted for publication. XPS (X-ray Photoelectron Spectroscopy) studies had found earlier that the more efficient native oxides had primarily As/sub 2/O/sub 3/ and Ga/sub 2/O/sub 3/ with little GaAsO/sub 4/. A new chemical step etching was developed which can be used to profile the oxide in 5- to 7-A/sup 0/ steps without modifying the oxide chemistry as does ion sputtering. A new Schottky barrier structure is described which can give cell efficiencies up to 16% without oxide interfacial layer effects and 20 to 22% with a moderate interfacial layer effect. AMOS solar cells fabricated on sliced polycrystalline GaAs wafers with 100- to 500-..mu..m grains using Sb/sub 2/O/sub 3/ deposited oxides showed 14% cell efficiency compared to 16.2% in a region with few grains.

Stirn, R.J.

1977-12-01T23:59:59.000Z

111

A survey of thin-film solar photovoltaic industry & technologies  

E-Print Network (OSTI)

A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

Grama, Sorin

2007-01-01T23:59:59.000Z

112

Development of recrystallization and thin-film solar cell processes. Final report, October 1, 1977-September 30, 1978  

DOE Green Energy (OSTI)

The program had two thrusts: (1) based upon electron-beam thermal treatment of deposited silicon films, to increase crystallite sizes to the range thought to be useful for polycrystalline, thin-film cell fabrication; and (2) to explore the feasibility of applying the directed-energy technologies of ion implantation and pulsed electron beam activation, previously developed for silicon cell fabrication, to junction formation in III-V compounds. The culmination of the recrystallization effort was demonstrating grains broader than the 30-..mu..m film in which they were regrown. This proof of principle was accomplished by means of two-step thermal process that consisted of large-area pulsed electron beam melting followed by small-area heating in a moving DC electron beam. The pulsed beam treatment reduced the three-dimensional disorder of the initial submicrometer crystallite silicon film to one characterized by submicrometercross-section, full-film-thickness, columnar crystallites. The swept beam treatment allowed coalesence of these columnar crystallites, through directional freezing, in the melt path of the beam. It is believed that this demonstration is the first evidence of greater-than-film thickness recrystallization of useful thickness silicon films other than by extended heat treatment at greater than 1350/sup 0/C. The results of the studies on junction formation in III-V materials, while not so dramatic, have shown that low-energy ion implantation is a potentially viable alternative to liquid or vapor phase epitaxy in the fabrication of GaAs solar cells. Further, the technical feasibility of pulsed electron beam activation of ion implanted junctions in GaAs has been demonstrated. Lastly, the concept of forming front-layer windows of GaP and AlGaAs on GaAs by high-dose ion implantation has been shown to be technically feasible.

Solomon, S.J.

1979-05-01T23:59:59.000Z

113

Large-area silicon-film{sup {trademark}} panels and solar cells. Phase I annual technical report, July 1, 1995--December 31, 1995  

DOE Green Energy (OSTI)

AstroPower is establishing a low cost manufacturing process for Silicon-Film{trademark} solar cells and panels by taking advantage of the continuous nature of the Silicon-Film{trademark} technology. Under this effort, each step used in Silicon-Film{trademark} panel fabrication is being developed into a continuous/in-line manufacturing process. The following benefits are expected: an accelerated reduction of PV manufacturing cost for installed systems; a foundation for significantly increased production capacity; and a reduction in handling and waste streams. The process development will be based on a new 31-cm wide continuous Silicon-Film{trademark} sheet. Long-term goals include the development of a 24W, 30 cm x 60 cm Silicon-Film{trademark} solar cell and a manufacturing capability for a 384W, 4 inches x 8 inches Silicon-Film{trademark} panel for deployment in utility-scale applications.

Rand, J.A.; Barnett, A.M.; Checchi, J.C.; Culik, J.S. [AstroPower, Inc., Solar Park, Newark, DE (United States)] [and others

1996-06-01T23:59:59.000Z

114

A NOVEL LOW THERMAL BUDGET THIN-FILM POLYSILICON FABRICATION PROCESS FOR LARGE-AREA, HIGH-THROUGHPUT SOLAR CELL PRODUCTION  

DOE Green Energy (OSTI)

methods. The poly-Si solar cell structure and the performance have been examined. In principle, the new process is potentially applicable to produce large-area thin-film poly-Si solar cells at a high throughput and low cost. A critical issue in this process is to prevent the excessive dopant diffusion during crystallization. Process parameters and the cell structure have to be optimized to achieve the production goal.

Yue Kuo

2010-08-15T23:59:59.000Z

115

High Performance CIGS Thin-Film Solar Cells: A Laboratory Perspective  

DOE Green Energy (OSTI)

We present a summary of our work on the preparation of CuInGaSe2 (CIGS) absorbers that has led to fabricating record-efficiency solar cells. The use of the three-stage process in conjunction with composition monitoring facilitates the fabrication of solar cells with efficiencies between 18% and 19.5% for absorber bandgap in the range of 1.1-1.2 eV. We describe our recent results in reducing absorber thickness and low-temperature deposition. Our preliminary results on absorbers grown from low-purity source materials show promise of reducing the cost of fabricating the absorber.

Ramanathan, K.; Bhattacharya, R.; Contreras, M.; Keane, J. C.; To, B.; Dhere, R. G.; Noufi, R.

2005-11-01T23:59:59.000Z

116

High efficiency cadmium and zinc telluride-based thin film solar cells  

DOE Green Energy (OSTI)

Polycrystalline Cd{sub 1-x}Zn{sub x}Te and Cd{sub 1-x}Mn{sub x}Te films with a band gap of 1.7 eV were successfully grown on glass/SnO{sub 2}/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd{sub 1-x}Zn{sub x}Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd{sub 1-x}Mn{sub x}Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd{sub 1-x}Mn{sub x}Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5%. MBE-grown CdTe cells also produced 8%--9% efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl{sub 2} + ZnCl{sub 2} chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

Rohatgi, A.; Summers, C.J.; Erbil, A.; Sudharsanan, R.; Ringel, S. (Georgia Inst. of Tech., Atlanta, GA (USA). School of Electrical Engineering)

1990-10-01T23:59:59.000Z

117

Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991  

DOE Green Energy (OSTI)

This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

Chu, T.L. [University of South Florida, Tampa, FL (United States)

1992-04-01T23:59:59.000Z

118

Development of high-efficiency, thin-film CdTe solar cells. Annual subcontract report, January 1, 1993--December 31, 1993  

DOE Green Energy (OSTI)

Polycrystalline thin film CdTe solar cells are one of the leading candidates for terrestrial photovoltaic applications. Theoretical calculations project an efficiency of 27% for single crystal, single junction CdTe cells, and the practically achievable efficiency for polycrystalline CdTe cells is 18-20%. Polycrystalline CdTe cells made by different groups show a significant variation in short circuit currents, open circuit voltages, and cell efficiencies. A better understanding of carrier loss and transport mechanism is crucial for explaining these differences, improving the yield, and bridging the gap between current and practically achievable limits in CdTe cell efficiencies. The goal of this program is to improve the understanding of the loss mechanisms in thin film CdS/CdTe solar cells and to improve their efficiency by characterizing the properties of the films as well as the finished devices.

Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Institute of Technology, Atlanta, GA (United States)

1994-09-01T23:59:59.000Z

119

Identification and Analysis of Distinct Features in Imaging Thin-Film Solar Cells: Preprint  

DOE Green Energy (OSTI)

Electroluminescence and photoluminescence (EL and PL) are two imaging techniques employed at NREL that are used to qualitatively evaluate solar cells. In this work, imaging lab-scale CdTe and CIGS devices provides information about small-area PV response, which will aid in determining the effects of non-uniformities on cell performance. EL, PL, and dark lock-in thermography signatures are first catalogued. Their responses to varying conditions are then studied. Further analysis includes acquiring spectral data, making microscopy measurements, and correlating luminescence to device performance. The goal of this work is to quantitatively determine non-uniformity effects on cell performance using rapid imaging techniques.

Zaunbrecher, K. N.; Johnston, S. W.; Sites, J. R.

2012-06-01T23:59:59.000Z

120

Amorphous thin films for solar-cell applications. Final report, September 11, 1978-September 10, 1979  

Science Conference Proceedings (OSTI)

In Section II, Theoretical Modeling, theories for the capture of electrons by deep centers in hydrogenated amorphous silicon (a-Si:H) and for field-dependent quantum efficiency in a-Si:H are presented. In Section III, Deposition and Doping Studies, the optimization of phosphorus-doped a-Si:H carried out in four different discharge systems is described. Some details of the dc proximity and rf magnetron discharge systems are also provided. Preliminary mass spectroscopy studies of the rf magnetron discharge in both SiH/sub 4/ and SiF/sub 4/ are presented. In Section IV, Experimental Methods for Characterizing a-Si:H, recent work involving photoluminescence of fluorine-doped a-Si:H, photoconductivity spectra, the photoelectromagnetic effect, the photo-Hall effect and tunneling into a-Si:H is presented. Also, studies of the growth mechanism of Pt adsorbed on both crystalline Si and a-Si:H are described. Measurements of the surface photovoltage have been used to estimate the distribution of surface states of phosphorus-doped and undoped a-Si:H. Section V, Formation of Solar-Cell Structures, contains information on stacked or multiple-junction a-Si:H solar cells. In Section VI, Theoretical and Experimental Evaluation of Solar-Cell Parameters, an upper limit of approx. = 400 A is established for the hole diffusion length in undoped a-Si:H. A detailed description of carrier generation, recombination and transport in a-Si:H solar cells is given. Finally, some characteristics of Pd-Schottky-barrier cells are described for different processing histories.

Carlson, D E; Balberg, I; Crandall, R S; Goldstein, B C; Hanak, J J; Pankove, J I; Staebler, D L; Weakliem, H A; Williams, R

1980-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Nanocrystal Solar Cells  

E-Print Network (OSTI)

Nov, 2005). Chapter 4 Hybrid solar cells with 3-dimensional5 All-inorganic nanocrystal solar cells 5.1 Introduction Inoperation of organic based solar cells and distinguish them

Gur, Ilan

2006-01-01T23:59:59.000Z

122

Definition: Solar cell | Open Energy Information  

Open Energy Info (EERE)

Solar cell Solar cell (Redirected from Definition:PV cell) Jump to: navigation, search Dictionary.png Solar cell Converts light into electrical energy. Traditional solar cells are made from silicon; second-generation solar cells (thin-film solar cells) are made from amorphous silicon or nonsilicon materials such as cadmium telluride; and third-generation solar cells are being made from variety of new materials, including solar inks, solar dyes, and conductive plastics.[1][2] View on Wikipedia Wikipedia Definition A solar cell (also called a photovoltaic cell) is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect. It is a form of photoelectric cell (in that its electrical characteristics-e.g. current, voltage, or resistance-vary

123

Development of a Wide Bandgap Cell for Thin Film Tandem Solar Cells: Final Technical Report, 6 November 2003 - 5 January 2007  

DOE Green Energy (OSTI)

The objective of this research program was to develop approaches for a transparent wide-bandgap cell to be used in a thin-film tandem polycrystalline solar cell that can ultimately attain 25% efficiency. Specific goals included the research and development of Cu(InGa)(SeS)2 and Cd1-xZnxTe alloys with a bandgap from 1.5 to 1.8 eV, demonstrating the potential of a 15% cell efficiency with a transparent contact, and supporting the High Performance PV Program. This Final Report presents results that emphasize the 3rd phase of the program.

Shafarman, W.; McCandless, B.

2008-08-01T23:59:59.000Z

124

Tianjin Jinneng Solar Cell Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Municipality, China Zip 300384 Sector Solar Product Chinese manufacturer of a-si Tandem thin-film solar cells and PV system integrator. References Tianjin Jinneng Solar Cell Co...

125

Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1994--January 15, 1995  

DOE Green Energy (OSTI)

This report describes results achieved during the second phase of a four year subcontract to develop and understand thin film solar cell technology related to a-Si and its alloys, CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}, and CdTe. Accomplishments during this phase include, development of equations and reaction rates for the formation of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} films by selenization, fabrication of a 15% efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} cell, development of a reproducible, reliable Cu-diffused contact to CdTe, investigation of the role of CdTe-CdS interdiffusion on device operation, investigation of the substitution of HCl for CdCl{sub 2} in the post-deposition heat treatment of CdTe/CdS, demonstration of an improved reactor design for deposition of a-Si films, demonstration of improved process control in the fabrication of a ten set series of runs producing {approximately}8% efficient a-Si devices, demonstration of the utility of a simplified optical model for determining quantity and effect of current generation in each layer of a triple stacked a-Si cell, presentation of analytical and modeling procedures adapted to devices produced with each material system, presentation of baseline parameters for devices produced with each material system, and various investigations of the roles played by other layers in thin film devices including the Mo underlayer, CdS and ZnO in CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} devices, the CdS in CdTe devices, and the ZnO as window layer and as part of the back surface reflector in a-Si devices. In addition, collaborations with over ten research groups are briefly described. 73 refs., 54 figs., 34 tabs.

Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N. [Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion

1995-06-01T23:59:59.000Z

126

Development of Thin Film Silicon Solar Cell Using Inkjet Printed Silicon and Other Inkjet Processes: Cooperative Research and Development Final Report, CRADA Number CRD-07-260  

Science Conference Proceedings (OSTI)

The cost of silicon photovoltaics (Si-PV) can be greatly lowered by developing thin-film crystalline Si solar cells on glass or an equally lower cost substrate. Typically, Si film is deposited by thermal evaporation, plasma enhanced chemical vapor deposition, and sputtering. NREL and Silexos have worked under a CRADA to develop technology to make very low cost solar cells using liquid organic precursors. Typically, cyclopentasilane (CPS) is deposited on a glass substrate and then converted into an a-Si film by UV polymerization followed by low-temperature optical process that crystallizes the amorphous layer. This technique promises to be a very low cost approach for making a Si film.

Sopori, B.

2012-04-01T23:59:59.000Z

127

Thin film polycrystalline silicon solar cells. Quarterly report No. 1, January 1, 1979-March 31, 1979  

DOE Green Energy (OSTI)

A theory capable of predicting the performance of polycrystalline silicon solar cells is formulated. It relates grain size to mobility, lifetime, diffusion length, reverse saturation current, open circuit photovoltage and fill factor. Only the diffusion lengths measured by the surface photovoltage technique for grains less than or equal to 5 ..mu..m do not agree with our theory. The reason for this discrepancy is presently being investigated. We conclude that grains greater than or equal to 100 ..mu..m are necessary to achieve efficiencies greater than or equal to 10 percent at AM1 irradiance. The calculations were performed for the case of no grain boundary passivation. At present we are investigating the improvements to be expected from grain boundary passivation. We have determined that the parameters that best fit the available data are as follows: (1) Number of surface states at grain boundaries acting as recombination centers - 1.6 x 10/sup 13//cm/sup 2/. (2) Capture cross section - 2 x 10/sup -16/ cm/sup 2/. (3) Surface recombination velocity at grain boundary - 3.2 x 10/sup 4/ cm/sec. The following types of solar cells are considered in the model: SnO/sub 2//Si Heterostructure, MIS, and p/n junction. In all types of solar cells considered, grain boundary recombination plays a dominant role, especially for small grains. Though the calculations were originally expected to yield only order of magnitude results, they have proven to be accurate for most parameters within 10 percent.

Ghosh, A.K.; Feng, T.; Maruska, H.P.; Fishman, C.

1979-01-01T23:59:59.000Z

128

Studies of pure and nitrogen-incorporated hydrogenated amorphous carbon thin films and their possible application for amorphous silicon solar cells  

Science Conference Proceedings (OSTI)

Hydrogenated amorphous carbon (a-C:H) and nitrogen-incorporated a-C:H (a-C:N:H) thin films were deposited using radio frequency-plasma-enhanced chemical vapor deposition technique and studied for their electrical, optical, and nano-mechanical properties. Introduction of nitrogen and increase of self bias enhanced the conductivity of a-C:H and a-C:N:H films, whereas current-voltage measurement reveals heterojunction formation due to their rectifying behavior. The bandgap of these films was changed over wide range from 1.9 eV to 3.45 eV by varying self bias and the nitrogen incorporation. Further, activation energy was correlated with the electronic structure of a-C:H and a-C:N:H films, and conductivity was discussed as a function of bandgap. Moreover, a-C:N:H films exhibited high hardness and elastic modulus, with maximum values as 42 GPa and 430 GPa, respectively, at -100 V. Observed fascinating electrical, optical, and nano-mechanical properties made it a material of great utility in the development of optoelectronic devices, such as solar cells. In addition, we also performed simulation study for an a-Si:H solar cell, considering a-C:H and C:N:H as window layers, and compared their performance with the a-Si:H solar cell having a-SiC:H as window layer. We also proposed several structures for the development of a near full-spectrum solar cell. Moreover, due to high hardness, a-C:N:H films can be used as a protective and encapsulate layer on solar cells, especially in n-i-p configuration on metal substrate. Nevertheless, a-C:H and a-C:N:H as a window layer can avoid the use of additional hard and protective coating and, hence, minimize the cost of the product.

Dwivedi, Neeraj [Physics of Energy Harvesting Division, National Physical Laboratory (CSIR), K.S. Krishnan Road, New Delhi 110012 (India); Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Kumar, Sushil [Physics of Energy Harvesting Division, National Physical Laboratory (CSIR), K.S. Krishnan Road, New Delhi 110012 (India); Malik, Hitendra K. [Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)

2012-01-01T23:59:59.000Z

129

Wide-Gap Thin Film Si n-i-p Solar Cells Deposited by Hot-Wire CVD: Preprint  

DOE Green Energy (OSTI)

High-voltage wide bandgap thin-film Si n-i-p solar cells have been made using the hot-wire chemical vapor deposition (HWCVD) technique. The best open-circuit voltage (Voc) has exceeded 0.94 V in solar cells using HWCVD in the entire n-i-p structure. A Voc of 0.97V has been achieved using HWCVD in the n and i layers and plasma-enhanced (PE) CVD for the p layer. The high voltages are attributed to the wide-gap i layer and an improved p/i interface. The wide-gap i layer is obtained by using low substrate temperatures and sufficient hydrogen dilution during the growth of the i layer to arrive at the amorphous-to-microcrystalline phase transition region. The optical band gap (E04) of the i layer is found to be 1.90 eV. These high-voltage cells also exhibit good fill factors exceeding 0.7 with short-circuit-current densities of 8 to 10 mA/cm2 on bare stainless steel substrates. We have also carried out photoluminescence (PL) spectroscopy studies and found a correlation between Voc and the PL peak energy position.

Wang, Q.; Iwaniczko, E.; Yang, J.; Lord, K.; Guha, S.; Wang, K.; Han, D.

2002-05-01T23:59:59.000Z

130

Preparation of thin film solar cells under very low pressure conditions. Final report, October 1, 1976--September 30, 1977  

DOE Green Energy (OSTI)

In this study the feasibility of fabricating backwall Schottky barrier polycrystalline solar cells under ultra-high vacuum conditions of 1 x 10/sup -10/ torr (N/sub 2/) was investigated. Thin films of electron beam vaporized silicon were deposited on cleaned metal substrates of tungsten, tantalum and hafnium. Mass spectra from the quadrapole residual gas analyzer were used to determine the partial pressure of peak heights of 13 residual gases during each processing step. During separate silicon depositions, the substrate temperature was varied between 400 and 750/sup 0/C and deposition rates between 20 and 750 A/min were used. Surface contamination and metal diffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition and annealing. Auger depth profiling, x-ray analysis, and SEM in the topographic and channeling modes, were utilized to characterize the samples with respect to silicon-metal boundary layer, interdiffusion, silicide formation and grain size of silicon. The clean metal surface was found to enhance thin film silicide growth. Fine grain silicon films were obtained for all samples that were not completely converted to a metallic silicide. Tungsten, tantalum and hafnium were found to form silicides at temperatures as low as 600/sup 0/C.

Schmidt, F.A.; Shanks, H.R.; Bevolo, A.J.; Campisi, G.J.

1977-01-01T23:59:59.000Z

131

Solar Cells  

Science Conference Proceedings (OSTI)

Mar 5, 2013 ... Here we are using microwaves for increasing the surface area of titania nanopowders for energy based applications like dye sensitized solar...

132

Development of economical improved thick film solar cell contact. Extension final report, April-December 1979  

DOE Green Energy (OSTI)

In the second half of the investigation of all metal screened electrodes, the focus was on base metal pastes in addition to further work with the silver systems. Contact resistance measurements were refined. A facility allowing firing in hydrogen and other atmospheres was acquired. Several experiments were made applying screenable pastes to solar cells. Doping investigations emphasized eutectic alloys reduced to powders. Metal systems were reviewed. A previously published vapor pressure curve for silver fluoride was corrected. Base metal experiments were done with nickel and copper using lead and tin as the frit metals. Severe adhesion problems were experienced with hydrogen atmospheres in all metal systems. A two step firing schedule was devised based upon experimentation which gave evidence that the silver fluoride-silicon dioxide reaction was modified by the presence of hydrogen. It was found that nitrogen prefiring allowed the silver fluoride dissociation and oxide removal without causing catastrophic oxidation of the base metal powders. The subsequent hydrogen firing step reduced oxides tht had formed and gave the proper sintered structure. Electrodes were coherent, adherent, and solderable in both nickel lead and copper lead systems. Towards the end of the contractual period aluminum-silicon and aluminum-germanium eutectic doping additions to copper pastes were tried on 2 1/4'' diameter solar cell back contacts, both with good results (eta = 9.4% AM1 uncoated).

Ross, B.

1979-12-01T23:59:59.000Z

133

Thin film solar energy collector  

DOE Patents (OSTI)

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

134

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Annual subcontract report, May 1985 - Jul 1986  

DOE Green Energy (OSTI)

A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

1987-02-01T23:59:59.000Z

135

High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003  

DOE Green Energy (OSTI)

The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

Rand, J. A.; Culik, J. S.

2005-10-01T23:59:59.000Z

136

Optimization of processing and modeling issues for thin film solar cell devices: Final report, February 3, 1997--September 1, 1998  

DOE Green Energy (OSTI)

This final report describes results achieved under a 20-month NREL subcontract to develop and understand thin-film solar cell technology associated to CuInSe{sub 2} and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE's long-range efficiency, reliability and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development and improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to device structure and module encapsulation.

Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

2000-02-28T23:59:59.000Z

137

Organic Thin-Film Solar Cells Based on Donor-Acceptor Interpenetrating Nano-Interface  

SciTech Connect

Photovoltaic cells with interpenetrating interfaces between a conducting polymer layer and a fullerene layer fabricated by a solvent corrosion method have been investigated. Using a weakly dissoluble combination of a solvent and an underlayer film, we fabricated a ''semi-layered'' structure that was maintaining a bilayer structure and furthermore interpenetrating at the interface of the conducting polymer and the fullerene layers. In these cells, high external quantum efficiencies (EQE) were obtained. The photovoltaic properties have been interpreted by the effective absorption of incident photons around the interface of conducting polymer and fullerene, the interpenetrating fullerene / conducting polymer interface involving the efficient photo-induced charge transfer, and the short distance between the electron-generation region and electrode resulting in the enhancement of the electron collection to the electrode. In these cells, both of the efficient exciton dissociations at the interpenetrating interface and the efficient carrier transports by each continuous pathway for electrons between fullerene molecules and for holes between conducting polymers occur.

Fujii, Akihiko; Hori, Tetsuro; Moritou, Hiroki; Fukuoka, Naoki; Sakamoto, Junki; Ozaki, Masanori [Division of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan)

2010-12-23T23:59:59.000Z

138

Definition: Solar cell | Open Energy Information  

Open Energy Info (EERE)

cell cell Jump to: navigation, search Dictionary.png Solar cell Converts light into electrical energy. Traditional solar cells are made from silicon; second-generation solar cells (thin-film solar cells) are made from amorphous silicon or nonsilicon materials such as cadmium telluride; and third-generation solar cells are being made from variety of new materials, including solar inks, solar dyes, and conductive plastics.[1][2] View on Wikipedia Wikipedia Definition A solar cell (also called a photovoltaic cell) is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect. It is a form of photoelectric cell (in that its electrical characteristics-e.g. current, voltage, or resistance-vary when light is incident upon it) which, when exposed to light, can generate

139

High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001  

DOE Green Energy (OSTI)

This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Si materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.

Compaan, A. D.; Deng, X.; Bohn, R. G.

2003-10-01T23:59:59.000Z

140

A NOVEL LOW THERMAL BUDGET THIN-FILM POLYSILICON FABRICATION PROCESS FOR LARGE-AREA, HIGH-THROUGHPUT SOLAR CELL PRODUCTION  

SciTech Connect

A novel thin-film poly-Si fabrication process has been demonstrated. This low thermal budget process transforms the single- and multi-layer amorphous silicon thin films into a poly-Si structure in one simple step over a pulsed rapid thermal annealing process with the enhancement of an ultrathin Ni layer. The complete poly-Si solar cell was fabricated in a short period of time without deteriorating the underneath glass substrate. The unique vertical crystallization process including the mechanism is discussed. Influences of the dopant type and process parameters on crystal structure will be revealed. The poly-Si film structure has been proved using TEM, XRD, Raman, and XPS methods. The poly-Si solar cell structure and the performance have been examined. In principle, the new process is potentially applicable to produce large-area thin-film poly-Si solar cells at a high throughput and low cost. A critical issue in this process is to prevent the excessive dopant diffusion during crystallization. Process parameters and the cell structure have to be optimized to achieve the production goal.

Yue Kuo

2010-08-15T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
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141

Surface Treatment of CuInGaSe2 Thin Films and Its Effect on the Photovoltaic Properties of Solar Cells: Preprint  

DOE Green Energy (OSTI)

Solar cells have been fabricated with partial electrolyte treatments of CuInGaSe2 (CIGS) thin-film absorbers in lieu of a CdS layer. Treatment of the absorbers in a containing Cd or Zn solution is shown to produce conditions under which efficient solar cells can be fabricated. A similar effect is also observed in CuInGaSSe2 (CIGSS) graded-bandgap absorbers. These observations can be explained by the ability of Cd and Zn to produce n-type doping or inversion in the surface region. We also provide a brief review of similar work done elsewhere and identify directions for future investigations.

Ramanathan, K.; Hasoon, F.S.; Smith, S.; Young, D.L.; Contreras, M.A.; Johnson, P.K.; Pudov, A.O.; Sites, J.R.

2002-10-01T23:59:59.000Z

142

Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995  

DOE Green Energy (OSTI)

This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Inst. of Tech., Atlanta, GA (United States)

1996-01-01T23:59:59.000Z

143

Boron arsenide thin film solar cell development. Quarterly report No. 1  

DOE Green Energy (OSTI)

A large portion of the effort expended in the first quarter was devoted to the design, assembly, and testing of the film growth apparatus. The reactor has been completed and tested by depositing boron from diborane gas onto heated quartz substrates. The objective of this effort was to achieve film growth, which has been accomplished. Within the last month, attempts to grow boron arsenide films have been made by introducing both diborane and arsine into the reactor. Thin films have been grown on quartz and sapphire (alumina) substrates. Variations in film thickness, composition, degree of crystallinity, and conductivity have been observed as a result of variation of the deposition parameters, such as type and flow rate of carrier gases, substrate temperature, and substrate materials. X-ray analysis of several samples indicates that films containing boron and arsenic have been grown. No crystalline films have been produced to date. Electrical and optical measurements indicate some correlation between at least one of the films grown and the results achieved by Chu, et al. on BAs. Thus far, the electrical conductivity, film topography, optical absorption, index of refraction, impurity type, and photo-conductivity have been investigated on one sample. This material appears to be B/sub x/As/sub y/ and could be BAs. Further investigations will be required to be conclusive.

Boone, J.L.; Van Doren, T.P.

1979-07-01T23:59:59.000Z

144

Economical Pyrite-Based Solar Cells  

compete with fossil fuels (payback time of about 5-7 years). The second generation of solar cells focuses on low production costs using thin film cells, which resulted in much lower efficiency rates. The third generation of solar cells has not yet ...

145

Solar cells  

DOE Patents (OSTI)

Organic photosensitive optoelectronic devices are disclosed. The devises are thin-film crystalline organic optoelectronic devices capable of generating a voltage when exposed to light, and prepared by a method including the steps of: depositing a first organic layer over a first electrode; depositing a second organic layer over the first organic layer; depositing a confining layer over the second organic layer to form a stack; annealing the stack; and finally depositing a second electrode over the second organic layer.

Peumans, Peter; Uchida, Soichi; Forrest, Stephen R.

2013-06-18T23:59:59.000Z

146

Commercialization of thick film solar cell. Final technical report, 9/15/79-9/14/80  

DOE Green Energy (OSTI)

Films of cadmium sulfide and cadmium telluride have been produced by screen printing and sintering. Cadmium sulfide films ten microns thick had a resistivity in the 10 ohm-cm range. A technique was developed for forming a cadmium telluride layer on top of a cadmium sulfide layer. Process control and device preparation are areas requiring further study.

None

1980-01-01T23:59:59.000Z

147

Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells  

Science Conference Proceedings (OSTI)

In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Department of Materials Science and Engineering, MingDao University, Changhua 52345, Taiwan (China); Department of Mechanical Engineering, Yuan Ze University, Taoyuan 320, Taiwan (China)

2011-11-15T23:59:59.000Z

148

Silicon solar cell assembly  

DOE Patents (OSTI)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

Burgess, Edward L. (Albuquerque, NM); Nasby, Robert D. (Albuquerque, NM); Schueler, Donald G. (Albuquerque, NM)

1979-01-01T23:59:59.000Z

149

Solar Cell Silicon  

Science Conference Proceedings (OSTI)

Jul 31, 2011 ... About this Symposium. Meeting, 2012 TMS Annual Meeting & Exhibition. Symposium, Solar Cell Silicon. Sponsorship, The Minerals, Metals...

150

Physical models of thin film polycrystalline solar cells based on measured grain-boundary and electronic-parameter properties. Final report, September 18, 1978-December 31, 1979  

DOE Green Energy (OSTI)

The research has sought the following: to identify and characterize the basic photovoltaic mechanisms that govern the conversion efficiency of polycrystalline thin-film solar cells; to experimentally determine the electronic parameters related to these photovoltaic mechanisms; and to relate these mechanisms and parameters to the conversion efficiency through theoretical physical models developed for engineering design. These objectives are all intimately related. The emphasis of the work has been on polysilicon, although it is building a foundation of understanding useful for similar research in the future on other thin-film materials. Progress is reported. (WHK)

Lindholm, F.A.; Fossum, J.G.; Holloway, P.A.; Neugroschel, A.

1979-01-01T23:59:59.000Z

151

Ultrasonically Sprayed and Inkjet Printed Thin Film Electrodes for Organic Solar Cells  

Science Conference Proceedings (OSTI)

Thin film pi-conjugated poly(3,4ethylenedioxythiophene): poly(styrenesulphonate) (PEDOT:PSS) as a hole transport layer on indium tin oxide is a key element in some of the most efficient organic photovoltaic and light emitting devices to date. Films are typically deposited by spincoating, which is not readily scalable. In this paper we investigate the critical parameters for both inkjet and ultrasonic spray deposition of PEDOT:PSS thin films on commercial indium tin oxide as a potentially scalable approach to contact formation. Inkjet parameters investigated include drop spacing and substrate temperature. Ultrasonic spray coating parameters investigated include substrate temperature and solution flow rate. We also show that the ink viscosity has a Newtonian character, making it well suited for inkjet printing. Films were characterized via optical profilometry, sheet resistance and atomic force microscopy. Optimized inkjet printed and ultrasonic sprayed PEDOT:PSS films were then compared to spincast layers in a prototypical bulk heterojunction photovoltaic device employing a poly(3-hexylthiophene) and [6,6]-PCBM (6,6-phenylC61-butyric acid-methyl ester) blend as the absorber. Practically all three approaches produced devices of comparable efficiency. Efficiencies were 3.6%, 3.5% and 3.3% for spin, spray and inkjet depositions respectively.

Steirer, K. X.; Berry, J. J.; Reese, M. O.; van Hest, M. F. A. M.; Miedaner, A.; Liberatore, M. W.; Collins, R. T.; Ginley, D. S.

2009-01-01T23:59:59.000Z

152

Overview and Challenges of Thin Film Solar Electric Technologies  

DOE Green Energy (OSTI)

In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

Ullal, H. S.

2008-12-01T23:59:59.000Z

153

High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges; Preprint  

DOE Green Energy (OSTI)

Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se2 (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

Noufi, R.; Zweibel, K.

2006-05-01T23:59:59.000Z

154

Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields; Preprint  

DOE Green Energy (OSTI)

We review the status of commercial polycrystalline thin-film solar cells and photovoltaic (PV) modules, including current and projected commercialization activities.

von Roedern, B.; Ullal, H. S.; Zweibel, K.

2006-05-01T23:59:59.000Z

155

Heterojunction solar cell  

DOE Patents (OSTI)

A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

Olson, J.M.

1994-08-30T23:59:59.000Z

156

Heterojunction solar cell  

DOE Patents (OSTI)

A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

Olson, Jerry M. (Lakewood, CO)

1994-01-01T23:59:59.000Z

157

SunShot Initiative: Dye-Sensitized Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Dye-Sensitized Solar Cells to Dye-Sensitized Solar Cells to someone by E-mail Share SunShot Initiative: Dye-Sensitized Solar Cells on Facebook Tweet about SunShot Initiative: Dye-Sensitized Solar Cells on Twitter Bookmark SunShot Initiative: Dye-Sensitized Solar Cells on Google Bookmark SunShot Initiative: Dye-Sensitized Solar Cells on Delicious Rank SunShot Initiative: Dye-Sensitized Solar Cells on Digg Find More places to share SunShot Initiative: Dye-Sensitized Solar Cells on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Dye-Sensitized Solar Cells Graphic showing the seven layers of a dye-sensitized PV cell: electrode, hole conductor, dope, TiO2, blocking layer, transparent conductive oxide, and glass.

158

Plastic Schottky-barrier solar cells  

DOE Patents (OSTI)

A photovoltaic cell structure is fabricated from an active medium including an undoped polyacetylene, organic semiconductor. When a film of such material is in rectifying contact with a metallic area electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates a magnesium layer on the undoped polyacetylene film. With the proper selection and location of elements a photovoltaic cell structure and solar cell are obtained.

Waldrop, J.R.; Cohen, M.J.

1981-12-30T23:59:59.000Z

159

Solar Cell Silicon  

Science Conference Proceedings (OSTI)

... continued and costs have been cut dramatically along the production value chain. The most important feedstock for crystalline solar cells is high purity silicon .

160

Amorphous Silicon(a-Si: H) Thin Film Based Omnidirectional Control Solar Powered Vehicle  

Science Conference Proceedings (OSTI)

Through the paper, our goal is to drive a car with the help of thin film based solar cell. Mechanical and Electrical parts are assembled thereby. The main objective of this project is to collect maximum solar energy from the solar spectrum and use that ... Keywords: Thin film Photovoltaic, Single p-i-n Junction, Steering Mechanism, H-Bridge, Gear motor

Abdullah Moinuddin; Md. Jahidul Hoque; Jony C. Sarker; Akhter Zia

2012-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Inverted amorphous silicon solar cell utilizing cermet layers  

DOE Patents (OSTI)

An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

Hanak, Joseph J. (Lawrenceville, NJ)

1979-01-01T23:59:59.000Z

162

Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells  

DOE Patents (OSTI)

A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

Bhattacharya, Raghu N. (Littleton, CO); Hasoon, Falah S. (Arvada, CO); Wiesner, Holm (Golden, CO); Keane, James (Lakewood, CO); Noufi, Rommel (Golden, CO); Ramanathan, Kannan (Golden, CO)

1999-02-16T23:59:59.000Z

163

Mixed ternary heterojunction solar cell  

SciTech Connect

A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.

Chen, Wen S. (Seattle, WA); Stewart, John M. (Seattle, WA)

1992-08-25T23:59:59.000Z

164

CdSiAs/sub 2/ thin films for solar cell applications. First quarter report April 9, 1979-June 30, 1979  

DOE Green Energy (OSTI)

Near stoichiometric bulk polycrystalline CdSiAs/sub 2/ has been synthesized by two techniques: (1) direct fusion of the elements and (2) direct fusion of the binaries SiAs, Cd/sub 3/As/sub 2/ and CdAs/sub 2/. The latter technique resulted in denser ternary material with good homogeneity. The above binaries melt congruently and were also formed by direct fusion. Sputtered ternary films were formed using a bulk CdSiAs/sub 2/ target, and a composite target of CdAs/sub 2/ discs in a Si plate. Composition of the CdSiAS/sub 2/ target changed with sputtering time. Amorphous films deposited from that target were heat treated, and became crystalline and near stoichiometric but with poor mechanical properties. It appears that films deposited from the composite target (Si + CdAs/sub 2/) can be adjusted to stoichiometry by means of sputtering power and target geometry. As deposited, these films also were amorphous. With respect to evaporated films, the study of thermal decomposition of CdSiAs/sub 2/ in vacuum was completed. The decomposition is preferential toward Cd between 570/sup 0/ and 710/sup 0/C, and toward As in the 710 to 1010/sup 0/C range. It is concluded that evaporation of the ternary is not a suitable method for forming CdSiAs/sub 2/ films. Plans for the next reporting period include continued sputtering studies with the composite target, constructing a two-source setup for evaporated films, expanded film characterization and fabrication of bulk CdSiAs/sub 2//CdS solar cells.

Burton, L.C.; Slack, L.H.

1979-07-25T23:59:59.000Z

165

Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing  

SciTech Connect

In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

Albin, D.; del Cueto, J.

2011-03-01T23:59:59.000Z

166

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase II annual subcontract report, 1 January 1985--31 January 1986  

DOE Green Energy (OSTI)

This report presents results of the second phase of research on high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. A large number of silane and disilane gas cylinders were analyzed with a gas chromatography/mass spectroscopy system. Strong correlations were found between the breakdown voltage, the deposition rate, the diffusion length, and the conversion efficiency for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition with either tetramethyl tin (TMT) or tin tetrachloride (TTC). The best were grown with TMT, but TTC films had a more controlled texture for light trapping and provided a better contact to the p-layer. The best results were obtained with 7059 glass substrates. Efficiencies as high as 10.86% were obtained in p-i-n cells with superlattice p-layers and as high as 10.74% in cells with both superlattice p- and n-layers. Measurements showed that the boron-doping level in the p-layer can strongly affect transport in the i-layer, which can be minimized by reactive flushing before i-layer deposition. Stability of a-Si:H cells is improved by light doping. 51 refs., 64 figs., 21 tabs.

Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; McVeigh, J.; Newton, J.; O'Dowd, J.; Oswald, R.S.; Rajan, K.

1988-09-01T23:59:59.000Z

167

Excess Dark Currents and Transients in Thin-Film CdTe Solar Cells: Implications for Cell Stability and Encapsulation of Scribe Lines and Cell Ends in Modules  

DOE Green Energy (OSTI)

We have isolated a non-linear, metastable, shunt-path failure mechanism located at the CdS/CdTe cell edge. In such cases, most performance loss, usually erratic, can be associated with the shunt path. We studied these shunt paths using dark current-transients and infrared (ir) imaging and find only one shunt path per cell and only at the cell corner wall, even in badly degraded cells. The effect on diminishing the cell's efficiency far exceeds what would be expected from the cell's linear shunt-resistance value. We propose that current transients and ir imaging be used as a ''fingerprint'' of the source and magnitude of excess currents to evaluate the contribution of scribe-line edges and cell ends in thin-film module performance and degradation due to environmental stress. Protection afforded by, or contamination due to, new or currently used encapsulants can then be evaluated.

McMahon, T. J.; Berniard, T. J.; Albin, D. S.; Demtsu, S. H.

2005-02-01T23:59:59.000Z

168

Lateral superlattice solar cells  

DOE Green Energy (OSTI)

A novel structure which comprises of a lateral superlattice as the active layer of a solar cell is proposed. If the alternating regions A and B of a lateral superlattice ABABAB... are chosen to have a Type-II band offset, it is shown that the performance of the active absorbing region of the solar cell is optimized. In essence, the Type-II lateral superlattice region can satisfy the material requirements for an ideal solar cells active absorbing region, i.e. simultaneously having a very high transition probability for photogeneration and a very long minority carrier recombination lifetime.

Mascarenhas, A.; Zhang, Y. [National Renewable Energy Lab., Golden, CO (United States); Millunchick, J.M.; Twesten, R.D.; Jones, E.D. [Sandia National Labs., Albuquerque, NM (United States)

1997-10-01T23:59:59.000Z

169

Physical models of thin film polycrystalline solar cells based on measured grain-boundary and electronic-parameter properties. Quarterly report  

DOE Green Energy (OSTI)

Solar cells fabricated on polycrystalline silicon, either bulk or thin-film, can potentially be cost-effective when used in terrestrial photovoltaic energy-conversion systems. To achieve this goal, the polysilicon cell efficiency must be increased considerably from its present values. A severe limitation to the cell efficiency is due to the grain boundaries and their influence on carrier recombination. To remove this limitation, an understanding of the fundamental physics underlying the effects of the grain boundaries on cell performance is helpful. This fundamental physics is discussed, and models are developed for recombination currents in polysilicon pn-junction solar cells. Several analytic approximations, suggested by physical insight, are used and checked ultimately for self-consistency with the results of the analysis. The models are defined such that their parameters can be related directly to measurements, and the models are hence useful in interpreting experimental results. They also can be used to study, in a systematic way, cell-design modifications to improve the efficiency, e.g., grain-boundary passivation techniques.

Lindholm, F.A.; Fossum, J.G.; Holloway, P.A.; Neugroschel, A.

1979-12-01T23:59:59.000Z

170

Thermal Management of Solar Cells  

E-Print Network (OSTI)

Nanostructured Silicon- Based Solar Cells, 2013. X. C. Tong,compact heat exchangers, and solar cells," Sci-Tech News,2011. C. J. Chen, Physics of Solar Energy: Wiley, 2011. M.

Saadah, Mohammed Ahmed

2013-01-01T23:59:59.000Z

171

Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Final report, 30 June 1979-29 June 1980  

DOE Green Energy (OSTI)

The objectives of this program were: (1) to develop appropriate measurement techniques to facilitate a quantitative study of the electrical activity of structural defects and at a grain boundary (G.B.) in terms of generation-recombination, barrier height, and G.B. conductivity; (2) to characterize G.B.s in terms of physical properties such as angle of misfit and local stress, and to correlate them with the electrical activity; (3) to determine the influence of solar cell processing on the electrical behavior of structural defects and G.B.s; and (4) to evaluate polycrystalline solar cell performance based on the above study, and to compare it with the experimentally measured performance. Progress is reported in detail. (WHK)

Sopori, B.L.

1980-11-01T23:59:59.000Z

172

Theoretical Analysis of Effects of Deep Level, Back Contact, and Absorber Thickness on Capacitance-Voltage Profiling of CdTe Thin-Film Solar Cells  

Science Conference Proceedings (OSTI)

The apparent carrier density profile measured by the capacitance-voltage technique in CdTe thin-film solar cells frequently displays a distinctive U-shape. We show that, even assuming a uniform carrier density, such a U-shape may arise from deep levels, a non-ohmic back-contact, and a thin absorber, which are commonly present in practical CdTe thin-film solar cells. A thin CdTe absorber contributes to the right branch of the U-shape due to a punch-through effect at reverse or zero biases, when the CdTe absorber is nearly fully depleted. A rectifying back-contact contributes to both branches of the U-shape due to voltage sharing with the front junction under a forward bias and early punch-through under a reverse bias. Deep levels contribute to the right branch, but also raise the bottom of the U-shape, leading to an overestimate of carrier density.

Li, J. V.; Halverson, A. F.; Sulima, O. V.; Bansal, S.; Burst, J. M.; Barnes, T. M.; Gessert, T. A.; Levi, D. H.

2012-05-01T23:59:59.000Z

173

Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical...  

NLE Websites -- All DOE Office Websites (Extended Search)

Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical Investigation Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical Investigation Print Wednesday,...

174

Solar cell array interconnects  

DOE Patents (OSTI)

Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

1995-11-14T23:59:59.000Z

175

Photovoltaic solar cell  

DOE Patents (OSTI)

A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

2013-11-26T23:59:59.000Z

176

Solar cell array interconnects  

DOE Patents (OSTI)

Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA); Colella, Nicolas J. (Livermore, CA); Williams, Kenneth A. (Livermore, CA)

1995-01-01T23:59:59.000Z

177

Nanowire-based All Oxide Solar Cells  

Science Conference Proceedings (OSTI)

We present an all-oxide solar cell fabricated from vertically oriented zinc oxide nanowires and cuprous oxide nanoparticles. Our solar cell consists of vertically oriented n-type zinc oxide nanowires, surrounded by a film constructed from p-type cuprous oxide nanoparticles. Our solution-based synthesis of inexpensive and environmentally benign oxide materials in a solar cell would allow for the facile production of large-scale photovoltaic devices. We found that the solar cell performance is enhanced with the addition of an intermediate oxide insulating layer between the nanowires and the nanoparticles. This observation of the important dependence of the shunt resistance on the photovoltaic performance is widely applicable to any nanowire solar cell constructed with the nanowire array in direct contact with one electrode.

Yang*, Benjamin D. Yuhas and Peidong; Yang, Peidong

2008-12-07T23:59:59.000Z

178

Thin film photovoltaic cells  

DOE Patents (OSTI)

A solar cell has as its transparent electrical contact a grid made from a non-noble metal by providing a layer of copper oxide between the transparent electrical contact and the absorber-generator.

Rothwarf, Allen (Philadelphia, PA)

1981-01-01T23:59:59.000Z

179

Quantum Dot Solar Cells: Preprint  

DOE Green Energy (OSTI)

Presented at the 2001 NCPV Program Review Meeting: Potential of quantum dot solar cells to increase the maximum attainable thermodynamic conversion efficiency of solar photoconversion to about 66%.

Nozik, A. J.

2001-10-01T23:59:59.000Z

180

Research on polycrystalline thin-film CuGaInSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--2 May 1992  

DOE Green Energy (OSTI)

This report describes research to fabricate high-efficiency CdZnS/CuInGaSe{sub 2} (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm{sup 2}-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd{sub 0.82}Zn{sub 0.18}S/CuIn{sub 0.80}Ga{sub 0.20}Se{sub 2} cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V{sub oc} = 0.581 V, J{sub sc} = 34.8 mA/cm{sup 2}, FF = 0.728, and a cell area of 0.979 cm{sup 2}.

Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W. [Boeing Co., Seattle, WA (United States). Defense and Space Systems Group

1992-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b  

E-Print Network (OSTI)

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

Paris-Sud XI, Université de

182

Broad spectrum solar cell  

DOE Patents (OSTI)

An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

Walukiewicz, Wladyslaw (Kensington, CA); Yu, Kin Man (Lafayette, CA); Wu, Junqiao (Richmond, CA); Schaff, William J. (Ithaca, NY)

2007-05-15T23:59:59.000Z

183

Thermal Management of Solar Cells  

E-Print Network (OSTI)

of the valence band. Solar radiation enters the p-n junctiona fraction of absorbed solar radiation energy is turned intoenclosure, the radiation energy from the solar cell light

Saadah, Mohammed Ahmed

2013-01-01T23:59:59.000Z

184

Photovoltaic mechanisms in polycrystalline thin film solar cells. Quarterly technical progress report No. 2, January 1, 1979--March 31, 1979  

DOE Green Energy (OSTI)

The effect of grain size on short circuit current density was investigated by approximating individual silicon grains as right circular cylinders and solving the diffusion equation within the base region. This model confirms the previous results that for grain radii exceeding a few tenths of a millimeter, the minority carrier lifetime in the grain essentially determines the short-circuit current response of the cell. The dark I-V characteristics of some polycrystalline solar cells were measured and compared with single crystal cells. The dark current of the polycrystalline cells is dominated by recombination within the space-charge region well past the one sun maximum power point. This has the effect of lowering the cells output power and open circuit voltage. Single crystal cells are dominated by recombination within the quasi-neutral regions at the one sun maximum power point and, consequently, the fill factor and open circuit voltage are greater. Additionally, some preliminary measurements of the spatial dependence of diffusion length were made, Laue X-ray diffraction study of crystal orientations was performed and some SEM micrographs of polycrystalline wafers were taken.

Storti, G.; Johnson, S.; Lin, H.C.; Armstrong, R.W.

1979-01-01T23:59:59.000Z

185

High-efficiency cadmium and zinc-telluride-based thin-film solar cells. Annual subcontract report, 1 March 1990--28 February 1991  

DOE Green Energy (OSTI)

This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

Rohatgi, A.; Sudharsanan, R.; Ringel, S. [Georgia Inst. of Tech., Atlanta, GA (United States)

1992-02-01T23:59:59.000Z

186

Research on polycrystalline thin-film CuInGaSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--21 May 1993  

DOE Green Energy (OSTI)

This report describes work to fabricate high-efficiency CdZnS/CuInGaSe{sub 2}, thin-film solar cells and to develop improved transparent conductor window layers such as ZnO. The specific technical milestone for Phase I was to demonstrate an air mass (AM) 1.5 global 13% , 1-cm{sup 2} total-area CuInGaSe{sub 2} (CIGS) thin-film solar cell. For Phase II, the objective was to demonstrate an AM1.5 global 13.5%, 1-cm{sup 2} total-area efficiency. We focused our activities on three areas. First, we modified the CIGS deposition system to double its substrate capacity. Second, we developed new tooling to enable investigation of a modified aqueous CdZnS process in which the goal was to improve the yield of this critical step in the device fabrication process. Third, we upgraded the ZnO sputtering system to improve its reliability and reproducibility. A dual rotatable cathode metallic source was installed, and the sputtering parameters were further optimized to improve ZnO`s properties as a transparent conducting oxide (TCO). Combining the refined CdZnS process with CIGS from the newly fixtured deposition system enable us to fabricate and deliver a ZnO/Cd{sub 0.08}Zn{sub 0.20}S/CuIn{sub 0.74}Ga{sub 0.26}Se{sub 2} cell on alumina with I-V characteristics, as measured by NREL under standard test conditions, of 13.7% efficiency with V{proportional_to} = 0.5458 V, J{sub sc} = 35.48 mA/cm{sup 2}, FF = 0.688, and efficiency = 14.6%.

Chen, W.S.; Stewart, J.M.; Mickelsen, R.A.; Devaney, W.E.; Stanbery, B.J. [Boeing Co., Seattle, WA (United States). Defense and Space Systems Group

1993-10-01T23:59:59.000Z

187

Enabling Thin Silicon Solar Cell Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45, -45, and...

188

Use of 2nd and 3rd Level Correlation Analysis for Studying Degradation in Polycrystalline Thin-Film Solar Cells  

DOE Green Energy (OSTI)

The correlation of stress-induced changes in the performance of laboratory-made CdTe solar cells with various 2nd and 3rd level metrics is discussed. The overall behavior of aggregated data showing how cell efficiency changes as a function of open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) is explained using a two-diode, PSpice model in which degradation is simulated by systematically changing model parameters. FF shows the highest correlation with performance during stress, and is subsequently shown to be most affected by shunt resistance, recombination and in some cases voltage-dependent collection. Large decreases in Jsc as well as increasing rates of Voc degradation are related to voltage-dependent collection effects and catastrophic shunting respectively. Large decreases in Voc in the absence of catastrophic shunting are attributed to increased recombination. The relevance of capacitance-derived data correlated with both Voc and FF is discussed.

Albin, D. S.; del Cueto, J. A.; Demtsu, S. H.; Bansal, S.

2011-03-01T23:59:59.000Z

189

Monolithic tandem solar cell  

DOE Patents (OSTI)

It is an object of the invention to provide a monolithic tandem photovoltaic solar cell which is highly radiation resistant and efficient; in which the energy bandgap of the lower subcell can be tailored for specific applications; solar cell comprising layers of InP and GaInAsP (or GaInAs), where said photovoltaic cell is useful, for example, in space power applications; having an improved power-to-mass ratio; in which subcells are lattice-matches; and are both two terminal and three terminal monolithic tandem photovoltaic solar cells. To achieve the foregoing and other objects and in accordance with the purpose of the present invention, as embodied and broadly described herein, the monolithic tandem photovoltaic solar cell may comprise; (a) an InP substrate having an upper surface; (b) a first photoactive subcell on the upper surface of the InP substrate; wherein the first subcell comprises GaInAs (which could include GaInAsP) and includes a homojunction; and (c) a second photoactive subcell on the first subcell; wherein the second subcell comprises InP and includes a homojunction. The cell is described in detail. 5 figs., 2 tabs.

Wanlass, M.W.

1989-11-03T23:59:59.000Z

190

Monolithic tandem solar cell  

DOE Patents (OSTI)

A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

Wanlass, Mark W. (Golden, CO)

1991-01-01T23:59:59.000Z

191

Third-Generation Solar Cells Using Optical Rectenna  

compete with fossil fuels (Payback time of about 5-7 years). The second generation of solar cells focuses on low production costs using thin film cells, which resulted in much lower efficiency rates. The thirdgeneration of solar cells has not yet ...

192

Optimization of Processing and Modeling Issues for Thin-Film Solar Cell Devices; Annual Report, 3 February 1997-2 February 1998  

DOE Green Energy (OSTI)

This report describes results achieved during phase I of a four-phase subcontract to develop and understand thin-film solar cell technology associated with CuInSe2 and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for developing viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.

Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E. (IEC, University of Delaware)

1998-12-08T23:59:59.000Z

193

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices: Final Report, 24 August 1998-23 October 2001  

DOE Green Energy (OSTI)

This report describes results achieved during a three-year subcontract to develop and understand thin-film solar cell technology associated to CuInSe2 and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.

Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Eser, E.; Hegedus, S. S.; McCandless, B. E.; Aparicio, R.; Dobson, K.

2003-01-01T23:59:59.000Z

194

Device Physics of Nanoscale Interdigitated Solar Cells (Poster)  

Science Conference Proceedings (OSTI)

Nanoscale interdigitated solar cell device architectures are being investigated for organic and inorganic solar cell devices. Due to the inherent complexity of these device designs quantitative modeling is needed to understand the device physics. Theoretical concepts have been proposed that nanodomains of different phases may form in polycrystalline CIGS solar cells. These theories propose that the nanodomains may form complex 3D intertwined p-n networks that enhance device performance.Recent experimental evidence offers some support for the existence of nanodomains in CIGS thin films. This study utilizes CIGS solar cells to examine general and CIGS-specific concepts in nanoscale interdigitated solar cells.

Metzger, W.; Levi, D.

2008-05-01T23:59:59.000Z

195

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells  

DOE Patents (OSTI)

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

1999-01-01T23:59:59.000Z

196

Amorphous thin films for solar-cell applications. Technical progress report, 11 October 1980 to 15 January 1981  

DOE Green Energy (OSTI)

Progress has been ahead of planned expectations in three instances: (a) achievement of 4 mA/cm/sup 2/, short circuit current density in a MIS structure solar cell under AM1 illumination; (b) fabrication of large area (4 cm/sup 2/) MIS cells with external J/sub sc/ > 3 mA/cm/sup 2/; and (c) deposition of p/sup +/ layers by B/sub 2/H/sub 6/ gas phase doping. A program status table is included. Reproducible n layers are now routinely deposited by sputtering in Ar, H/sub 2/, and PH/sub 3/ gases. The major remaining obstacle to the goal of a 3.5% cell is the deposition of a quality i-layer. Although information deduced from infrared absorption and Raman data indicates that most of the hydrogen is bonded in the SiH configuration, the photoconductivity of the intrinsic material requires marked improvement. Two forms of magnetron sputtering, planar and cylindrical, are being exploited. The planar deposition system has the advantage that experimental costs are low; the cylindrical system is easily scalable to large product throughput. Schematic illustrations of the two systems and descriptions of apparatus modifications incorporated are included.

Jonath, A.D.; Anderson, W.W.; Crowley, J.L.; MacMillan H.F. Jr.; Thornton, J.A.

1981-02-20T23:59:59.000Z

197

Amorphous semiconductor solar cell  

SciTech Connect

A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

Dalal, Vikram L. (Newark, DE)

1981-01-01T23:59:59.000Z

198

Nanostructured plasmonics silicon solar cells  

Science Conference Proceedings (OSTI)

We report a plasmonics silicon solar cell design, with the possibility of lower cost and higher efficiency. The proposed solar cell consists of a radial p-n junction silicon nanopillar arrays in combination with metallic nanoparticles resolved at the ... Keywords: Antireflection coating, Optical absorption, Power conversion efficiency, Solar cells

Pushpa Raj Pudasaini, Arturo A. Ayon

2013-10-01T23:59:59.000Z

199

Influence of copper to indium atomic ratio on the properties of Cu-In-Te based thin-film solar cells prepared by low-temperature co-evaporation  

SciTech Connect

The influence of copper to indium atomic ratio (Cu/In) on the properties of Cu-In-Te based thin films and solar cells was investigated. The films (Cu/In = 0.38-1.17) were grown on both bare and Mo-coated soda-lime glass substrates at 250 Degree-Sign C by single-step co-evaporation using a molecular beam epitaxy system. Highly (112)-oriented CuInTe{sub 2} films were obtained at Cu/In ratios of 0.84-0.99. However, stoichiometric and Cu-rich films showed a poor film structure with high surface roughness. The films consist of polyhedron-shaped grains, which are related to the coexistence of a Cu{sub 2-x}Te phase, and significant evidence for the coexistence of the Cu{sub 2-x}Te phase in the stoichiometric and Cu-rich films is presented. KCN treatment was performed for the films in order to remove the Cu{sub 2-x}Te phase. The stoichiometric CuInTe{sub 2} thin films exhibited a high mobility above 50 cm{sup 2}/V s at room temperature after the KCN treatment. A preliminary solar cell fabricated using a 1.4-{mu}m-thick Cu-poor CuInTe{sub 2} thin film (Cu/In = 0.84, E{sub g} = 0.988 eV) yielded a total-area efficiency of 2.10%. The photovoltaic performance of the cell was improved after long-term ambient aging in dark conditions.

Mise, Takahiro; Nakada, Tokio [Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa, 252-5258 (Japan)

2012-09-15T23:59:59.000Z

200

Thin film absorber for a solar collector  

SciTech Connect

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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201

EE580 Solar Cells Todd J. Kaiser  

E-Print Network (OSTI)

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 08 · Solar Cell Characterization 1Montana State University: Solar Cells Lecture 8: Characterization Solar Cell Operation n Emitter p Base Rear completing the circuit 2Montana State University: Solar Cells Lecture 8: Characterization Solar Cell

Kaiser, Todd J.

202

Fabrication and Characterization of Organic Solar Cells  

E-Print Network (OSTI)

8? WrfelP. Physicsofsolarcells:fromprinciplestoPhotocellforConverting SolarRadiationintoElectricalgeneration photovoltaics: solar cells for 2020 and

Yengel, Emre

2010-01-01T23:59:59.000Z

203

Nanowire-based All Oxide Solar Cells  

E-Print Network (OSTI)

photovoltaic performance is widely applicable to any nanowire solar cellfilm solar cells. The principal photovoltaic (PV) materialphotovoltaic performance is widely applicable to any nanowire solar cell

Yang, Peidong

2009-01-01T23:59:59.000Z

204

Available Technologies:Improved Amorphous Silicon Solar Cells  

Solar cells; Large solar panels; ADVANTAGES. Increased performance ; Less expensive than crystalline silicon solar cells; Enables thinner, lighter solar panels;

205

Thin film photovoltaic cell  

DOE Patents (OSTI)

A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

1982-01-01T23:59:59.000Z

206

Indium phosphide/cadmium sulfide thin-film solar cells. Final report, May 1979 through July 1980  

DOE Green Energy (OSTI)

Thin-film InP/RXCdS/ITO/GLASS devices were prepared by depositing ITO on low-cost glass substrate, depositing CdS on the ITO by thermal evaporation, increasing the CdS lateral grain size by recrystallization, and depositing p-type InP by planar reactive deposition (PRD) on the recrystallized CdS (RXCdS). Yields of the RXCdS/ITO/GLASS substrates were increased to 90% with lateral dimensions of the RXCdS grains as large as 0.3 mm. P-type InP layers were obtained with Be doping. S-doping via vapor transport from the CdS was eliminated by capping the entire RXCdS substrate with InP. For InP deposited on RXCdS at 380/sup 0/C, devices showed blocking action with a barrier height of about 0.5 V but no light response, possibly due to an intermediate approx. 3-..mu..m-thick n-InP layer from diffusion of S from the RXCdS. These results were achieved despite poor InP epitaxy due to an approx. 0.5-..mu..m-thick In-Cd-S transition layer between the InP and the RXCdS. InP films were subsequently deposited on RXCdS at the reduced substrate temperature of 280/sup 0/C to reduce S-diffusion and improve the quality of the epitaxy. Complete InP epitaxy on RXCdS was achieved with the lateral dimensions of the InP (approx. = 40 ..mu..m) replicating that of the RXCdS. Given the increase in the concentration of n-type native defects as substrate temperature is decreased, the present lower limit for obtaining p-type InP by vacuum technologies appears to be about 300/sup 0/C. A 300 to 350/sup 0/C range of substrate temperature appears to befeasible for preparing large-grained p-type InP for both frontwall and backwall cell. However, if the thickness of the n-type layer due to S diffusion cannot be kept to less than a few thousand Angstroms, then development must be restricted to the frontwall cells.

Zanio, K.

1980-09-01T23:59:59.000Z

207

CIGS-Based Solar Cells Prepared from Electrodeposited Precursor...  

NLE Websites -- All DOE Office Websites (Extended Search)

CIGS absorbers using several techniques, including vacuum and non-vacuum technologies. Thin-film solar cell devices based on PVD CIGS have demonstrated an efficiency of 20.1%. 1...

208

Solar Cells Hellas SA | Open Energy Information  

Open Energy Info (EERE)

Cells Hellas SA Jump to: navigation, search Name Solar Cells Hellas SA Place Athens, Greece Product Greek manufacturer of PV wafers, cells and modules. References Solar Cells...

209

EE580 Solar Cells Todd J. Kaiser  

E-Print Network (OSTI)

with Photovoltaic Cells Contains initial work for the current PV kit experiments o Solar Cells o Solar Electric Arrays o Photovoltaics in Arrays: Solar Cells Generating Electricity http://www.californiasolarcenter.org/history_pv and the Solar Radiation Monitoring Laboratory

Kaiser, Todd J.

210

Dye-sensitized solar cells  

DOE Patents (OSTI)

A low-cost dye-sensitized Schottky barrier solar cell is comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent. 3 figs.

Skotheim, T.A.

1980-03-04T23:59:59.000Z

211

Dye-sensitized solar cells  

DOE Patents (OSTI)

A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

Skotheim, Terje A. (Berkeley, CA)

1980-01-01T23:59:59.000Z

212

Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds  

DOE Patents (OSTI)

Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1983-01-01T23:59:59.000Z

213

High efficiency thin film CdTe solar cells. Second quarterly progress report, June 19-September 18, 1979  

DOE Green Energy (OSTI)

During the second quarter of this program primary emphasis was put into depositing and evaluating both n and p-type CdTe films on a variety of conducting and non-conducting substrates. Improvements in the deposition apparatus permitted preparation of a large number of CdTe films and numerous analytic techniques available at Tufts University were utilized to examine these films. It was found that the introduction of a thin (100 A). In layer between the ITO and the CdTe significantly reduced the previously observed barrier present at the ITO/n-CdTe interface without adversely reducing optical transmission. While the resistivity of the films is still rather high, very recent results show that proper changes in procedure are capable of markedly lowering the resistivity. Preliminary Schottky barrier devices have been made which show promising photovoltaic characteristics.

Serreze, H.B.; Entine, G.; Goldner, R.B.

1979-10-01T23:59:59.000Z

214

Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells  

DOE Patents (OSTI)

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO); Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

1998-03-24T23:59:59.000Z

215

Flexible implementation of rigid solar cell technologies.  

Science Conference Proceedings (OSTI)

As a source of clean, remote energy, photovoltaic (PV) systems are an important area of research. The majority of solar cells are rigid materials with negligible flexibility. Flexible PV systems possess many advantages, such as being transportable and incorporable on diverse structures. Amorphous silicon and organic PV systems are flexible; however, they lack the efficiency and lifetime of rigid cells. There is also a need for PV systems that are light weight, especially in space and flight applications. We propose a solution to this problem by arranging rigid cells onto a flexible substrate creating efficient, light weight, and flexible devices. To date, we have created a working prototype of our design using the 1.1cm x 1cm Emcore cells. We have achieved a better power to weight ratio than commercially available PowerFilm{reg_sign}, which uses thin film silicon yielding .034W/gram. We have also tested our concept with other types of cells and verified that our methods are able to be adapted to any rigid solar cell technology. This allows us to use the highest efficiency devices despite their physical characteristics. Depending on the cell size we use, we can rival the curvature of most available flexible PV devices. We have shown how the benefits of rigid solar cells can be integrated into flexible applications, allowing performance that surpasses alternative technologies.

Hollowell, Andrew E.

2010-08-01T23:59:59.000Z

216

CdSiAs/sub 2/ thin films for solar cell applications. Final report, April 9, 1979-April 8, 1980  

DOE Green Energy (OSTI)

Compounds of Cd-Si-As required for sputtering targets and evaporation charges were synthesized by direct fusion. These include CdSiAs/sub 2/, Cd/sub 3/As/sub 2/, CdAs/sub 2/ and SiAs. Polycrystalline ingots of CdSiAs/sub 2/ were found to be porous, with the chalcopyrite structure, and with minor amounts of other phases such as CdAs/sub 2/, SiAs,As and Cd/sub 3/As/sub 2/. Sputtered films were formed in a single target RF system. A homogeneous CdSiAs/sub 2/ target was initially used, followed by composite targets consisting of CdAs/sub 2/ + Si. Films from the latter targets were superior to the others and were more extensively studied. As deposited films were amorphous, off stoichiometry, with resistivities over 10/sup 8/..cap omega..-cm and band gaps of approx. 1.4 eV. Subsequent reactive heat treatments in the 515/sup 0/ to 615/sup 0/C range resulted in crystalline films, resistivities of 1 to 10 ..cap omega.. cm, CdSiAs/sub 2/ compositions within 1% of stoichiometry, energy gap of approx. 1.55 eV, absorption coefficient of 2 x 10/sup 4/cm/sup -1/ at 0.6 ..mu..m, but with poor mechanical properties (mainly cracking). A Ta/Si0/sub 2/ substrate proved to be the best for these films. Thermal evaporation studies of CdSiAs/sub 2/ established that effusion is preferential toward Cd between 570 and 710/sup 0/C, and toward As in the 710 to 1010/sup 0/C range. All films resulting from CdAs/sub 2/ charges were found to be Cd deficient. For these reasons, over the last 6 months of the program, only sputtered films were studied further. Preliminary CdSiAs/sub 2//CdS junctions were formed on bulk and sputtered CdSiAs/sub 2/. The bulk junctions produced photoresponse up to 0.25V and several ..mu..A. The thin film junctions were rectifying, but generated insignificant photoresponse, apparently due to the poor properties of the CdSiAs/sub 2/ films.

Burton, L.C.; Slack, L.H.

1980-06-01T23:59:59.000Z

217

IMAGES REVEAL TINY FLAWS IN FILMS FOR SOLAR ...  

Science Conference Proceedings (OSTI)

... over large surfaces. Such films are used in making solar energy panels and large flat-panel displays. The efficiency of the ...

218

Solar cell module lamination process  

DOE Patents (OSTI)

A solar cell module lamination process using fluoropolymers to provide protection from adverse environmental conditions and thus enable more extended use of solar cells, particularly in space applications. A laminate of fluoropolymer material provides a hermetically sealed solar cell module structure that is flexible and very durable. The laminate is virtually chemically inert, highly transmissive in the visible spectrum, dimensionally stable at temperatures up to about 200.degree. C. highly abrasion resistant, and exhibits very little ultra-violet degradation.

Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA); Aceves, Randy C. (Tracy, CA)

2002-01-01T23:59:59.000Z

219

Thermal Management of Solar Cells.  

E-Print Network (OSTI)

??The focus on solar cells as a source of photovoltaic energy is rapidly increasing nowadays. The amount of sun's energy entering earth surface in one (more)

Saadah, Mohammed Ahmed

2013-01-01T23:59:59.000Z

220

TUTORIALS: Solar Cell Operation - TMS  

Science Conference Proceedings (OSTI)

Jan 21, 2008 ... This animated tutorial describes the basics of solar cell operation. It defines the photovoltaic effect, discusses electron and current flow within a...

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Monolithic tandem solar cell  

DOE Patents (OSTI)

A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. 9 figs.

Wanlass, M.W.

1994-06-21T23:59:59.000Z

222

Monolithic tandem solar cell  

DOE Patents (OSTI)

A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched.

Wanlass, Mark W. (Golden, CO)

1994-01-01T23:59:59.000Z

223

Advanced processing technology for high-efficiency thin-film CuInSe{sub 2} solar cells. Annual subcontract report, 1 March 1992--28 February 1993  

DOE Green Energy (OSTI)

This report describes work to develop novel fabrication for CuInSe{sub 2} (CIS) solar cells that will result in improved performance and cost effectiveness at the manufacturing level. The primary approach involves all solid-state processing for CIS. This was augmented by work to provide novel alternatives for the formation of the window layer/heterojunction contact. Inherent to the project was the need to develop a generic understanding of the relationship between processing and performance so that broad-based transfer to industry can be facilitated. We achieved good-electronic-quality CIS by the use of two selenization procedures for predeposited metal layers. We achieved good stoichiometry throughout the bulk of the film, attained grain sizes of up to 1 {mu}m, and measured electron mobilities of up to 60 cm{sup 2}V-s. However, there is a complex relationship between grain size, adhesion, and performance. Our primary approach to characterization was to fabricate ZnO/CIS test devices and measure as many properties as possible in device format. We are also developing reactive sputtering of ZnO as an alternative window layer technology.

Morel, D.L.; Attar, G.; Karthikeyan, S.; Muthaiah, A.; Zafar, A. [University of South Florida, Tampa, FL (United States)

1993-08-01T23:59:59.000Z

224

Preparation and properties of high deposition a-Si:H films and solar cells using disilane: Final subcontract report, 1 May 1988--30 April 1989  

DOE Green Energy (OSTI)

The focus of research during the second phase of SERI Contract No. ZB-7-06002-1 was the fabrication of high efficiency amorphous silicon p-i-n solar cells using intrinsic layers deposited at high deposition rate (/minus/2 nm/s) from disilane discharges. In order to achieve this goal, we utilized higher discharge excitation frequencies (10-110 MRz) to improve the intrinsic layer properties. In this report, we discuss the influence of the driving frequency at fixed fr power density on silane and disilane discharges, the properties of materials deposited from these discharges, and the performance of p-i-n devices fabricated using intrinsic layers deposited at a rate of /minus/2 nm/s from disilane 110 MRz discharges. The use of higher excitation frequency in disilane discharges increases the deposition rate and results in films with improved properties compared with those deposited at similar deposition rate by increasing the rf power. As a result of these improvements, we have fabricated a p-i-n device at a deposition rate of 2nm/s with an AM1.5 efficiency of 9/7% over an area of 1 cm/sup 2/. This result exceeds the goals of this contract. 24 refs., 16 figs., 2 tabs.

Chatham, H.; Bhat, P.K.

1989-09-01T23:59:59.000Z

225

Nanocrystal Solar Cells  

E-Print Network (OSTI)

absorption of the solar spectrum. Also, like branched CdSeonly a fraction of the solar spectrum may be utilized for PVonly part of the solar spectrum. As such, blends should

Gur, Ilan

2006-01-01T23:59:59.000Z

226

Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells; Annual subcontract report, 1 March 1992--28 February 1993  

DOE Green Energy (OSTI)

Solar cells operate by converting the radiation power from sun light into electrical power through photon absorption by semiconductor materials. The elemental and compound material systems widely used in photovoltaic applications can be produced in a variety of crystalline and non-crystalline forms. Although the crystalline group of materials have exhibited high conversion efficiencies, their production cost are substantially high. Several candidates in the poly- and micro-crystalline family of materials have recently gained much attention due to their potential for low cost manufacturability, stability, reliability and good performance. Among those materials, CuInSe{sub 2} and CdTe are considered to be the best choices for production of thin film solar cells because of the good optical properties and almost ideal band gap energies. Considerable progress was made with respect to cell performance and low cost manufacturing processes. Recently conversion efficiencies of 14.1 and 14.6% have been reported for CuInSe{sub 2} and CdTe based solar cells respectively. Even though the efficiencies of these cells continue to improve, they are not fully understood materials and there lies an uncertainty in their electrical properties and possible attainable performances. The best way to understand the details of current transport mechanisms and recombinations is to model the solar cells numerically. By numerical modeling, the processes which limit the cell performance can be sought and therefore, the most desirable designs for solar cells utilizing these materials as absorbers can be predicted. The problems with numerically modeling CuInSe{sub 2} and CdTe solar cells are that reported values of the pertinent material parameters vary over a wide range, and some quantities such as carrier concentration are not explicitly controlled.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., West Lafayette, IN (United States)

1994-03-01T23:59:59.000Z

227

Optical method for automated real time control of elemental composition, distribution, and film thickness in CIGS solar cell production  

The solar industry has shown significant growth over the past decade. From 2002 to 2007 the market for Copper Indium Gallium Selenide (CIGS) grew at a 60% annual rate and it is estimated that the global CIGS market will grow to $7.6 billion by 2016. ...

228

The properties of sprayed nanostructured P-type CuI films for dye-sensitized solar cells application  

Science Conference Proceedings (OSTI)

In our experiments, we provide a new approach for depositing CuI (inorganic compound) thin films using the mister atomizer technique. The CuI solution was sprayed into fine droplets using argon as a carrier gas at different solution concentrations. The ...

M. N. Amalina; N. A. Rasheid; M. Rusop

2012-01-01T23:59:59.000Z

229

Functional requirements for component films in a solar thin-film photovoltaic/thermal panel  

SciTech Connect

The functional requirements of the component films of a solar thin-film photovoltaic/thermal panel were considered. Particular emphasis was placed on the new functions, that each layer is required to perform, in addition to their pre-existing functions. The cut-off wavelength of the window layer, required for solar selectivity, can be achieved with charge carrier concentrations typical of photovoltaic devices, and thus does not compromise electrical efficiency. The upper (semiconductor) absorber layer has a sufficiently high thermal conductivity that there is negligible temperature difference across the film, and thus negligible loss in thermal performance. The lower (cermet) absorber layer can be fabricated with a high ceramic content, to maintain high solar selectivity, without significant increase in electrical resistance. A thin layer of molybdenum-based cermet at the top of this layer can provide an Ohmic contact to the upper absorber layer. A layer of aluminium nitride between the metal substrate and the back metal contact can provide electrical isolation to avoid short-circuiting of series-connected cells, while maintaining a thermal path to the metal substrate and heat extraction systems. Potential problems of differential contraction of heated films and substrates were identified, with a recommendation that fabrication processes, which avoid heating, are preferable. (author)

Johnston, David [Power and Energy Research Group, School of Engineering, Northumbria University, Ellison Place, Newcastle upon Tyne NE1 8ST (United Kingdom)

2010-03-15T23:59:59.000Z

230

Sputtered Nickel Oxide Thin Film for Efficient Hole Transport Layer in Polymer-Fullerene Bulk-Heterojunction Organic Solar Cell  

SciTech Connect

Bulk-heterojunction (BHJ) organic photovoltaics (OPV) are very promising thin film renewable energy conversion technologies due to low production cost by high-throughput roll-to-roll manufacturing, an expansive list of compatible materials, and flexible device fabrication. An important aspect of OPV device efficiency is good contact engineering. The use of oxide thin films for this application offers increased design flexibility and improved chemical stability. Here we present our investigation of radio frequency magnetron sputtered nickel oxide (NiO{sub x}) deposited from oxide targets as an efficient, easily scalable hole transport layer (HTL) with variable work-function, ranging from 4.8 to 5.8 eV. Differences in HTL work-function were not found to result in statistically significant changes in open circuit voltage (V{sub oc}) for poly(3-hexylthiophene):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM) BHJ device. Ultraviolet photoemission spectroscopy (UPS) characterization of the NiO{sub x} film and its interface with the polymer shows Fermi level alignment of the polymer with the NiO{sub x} film. UPS of the blend also demonstrates Fermi level alignment of the organic active layer with the HTL, consistent with the lack of correlation between V{sub oc} and HTL work-function. Instead, trends in j{sub sc}, V{sub oc}, and thus overall device performance are related to the surface treatment of the HTL prior to active layer deposition through changes in active layer thickness.

Widjonarko, N. E.; Ratcliff, E. L.; Perkins, C. L.; Sigdel, A. K.; Zakutayev, A.; Ndione, P. F.; Gillaspie, D. T.; Ginley, D. S.; Olson, D. C.; Berry, J. J.

2012-03-01T23:59:59.000Z

231

The challenges of organic polymer solar cells  

E-Print Network (OSTI)

The technical and commercial prospects of polymer solar cells were evaluated. Polymer solar cells are an attractive approach to fabricate and deploy roll-to-roll processed solar cells that are reasonably efficient (total ...

Saif Addin, Burhan K. (Burhan Khalid)

2011-01-01T23:59:59.000Z

232

Nontoxic quantum dot research improves solar cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Nontoxic quantum dot research improves solar cells Nontoxic quantum dot research improves solar cells Solar cells made with low-cost, nontoxic copper-based quantum dots can achieve...

233

Plastic Schottky barrier solar cells  

SciTech Connect

A photovoltaic cell structure is fabricated from an active medium including an undoped, intrinsically p-type organic semiconductor comprising polyacetylene. When a film of such material is in rectifying contact with a magnesium electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates the magnesium layer on the undoped polyacetylene film.

Waldrop, James R. (Thousand Oaks, CA); Cohen, Marshall J. (Thousand Oaks, CA)

1984-01-24T23:59:59.000Z

234

MIS and SIS solar cells on polycrystalline silicon  

DOE Green Energy (OSTI)

MIS and SIS structured solar cells are receiving much attention in the photovoltaic community. Seemingly, these cells could be a viable alternative to thermally diffused p-n junctions for use on thin-film polycrystalline silicon substrates. This review describes MIS/SIS structured solar cells and the possible advantages of these structures for use with thin-film polycrystalline silicon. The results of efficiency calculations are presented. Also addressed are lifetime stability and fabrication techniques amenable to large scale production. Finally, the relative advantages and disadvantages of these cells and the results obtained are presented.

Cheek, G.; Mertens, R.

1980-02-01T23:59:59.000Z

235

Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells  

DOE Patents (OSTI)

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

Noufi, R.; Gabor, A.M.; Tuttle, J.R.; Tennant, A.L.; Contreras, M.A.; Albin, D.S.; Carapella, J.J.

1995-08-15T23:59:59.000Z

236

Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells  

DOE Patents (OSTI)

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

Noufi, Rommel (Golden, CO); Gabor, Andrew M. (Boulder, CO); Tuttle, John R. (Denver, CO); Tennant, Andrew L. (Denver, CO); Contreras, Miguel A. (Golden, CO); Albin, David S. (Denver, CO); Carapella, Jeffrey J. (Evergreen, CO)

1995-01-01T23:59:59.000Z

237

Research highlights potential for improved solar cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Potential for improved solar cells Research highlights potential for improved solar cells Research has shown that carrier multiplication is a real phenomenon in tiny semiconductor...

238

ELECTROSPUN POLYMER-FIBER SOLAR CELL.  

E-Print Network (OSTI)

??A study of fabricating the first electrospun polymer-fiber solar cell with MEHPPV is presented. Motivation for the work and a brief history of solar cell (more)

Nagata, Shinobu

2011-01-01T23:59:59.000Z

239

Ideal Configuration For Nanoscale Solar Cells - Energy ...  

Technology Marketing Summary The standard design of excitonic solar cells, which includes most organic-based solar cells, is ideal in only two out of ...

240

Novel Materials Development for Polycrystalline Thin-Film Solar Cells: Final Subcontract Report, 26 July 2004--15 June 2008  

DOE Green Energy (OSTI)

Focus on player interfacial assessment using Schottky barrier and heterojunction theory, and analysis of p-windows for CIGS and CdTe cells.

Keszler, D. A.; Wager, J. F.

2008-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Bulb mounting of solar cell  

SciTech Connect

An energy converting assembly is provided for parasiting of light from a fluorescent light bulb utilizing a solar cell. The solar cell is mounted on a base member elongated in the dimension of elongation of the fluorescent bulb, and electrical interconnections to the cell are provided. A flexible sheet of opaque material having a flat white interior reflective surface surrounds the fluorescent bulb and reflects light emitted from the bulb back toward the bulb and the solar cell. The reflective sheet is tightly held in contact with the bottom of the bulb by adhesive, a tie strap, an external clip, or the like.

Thompson, M.E.

1983-04-05T23:59:59.000Z

242

Stabilization of solar films against hi temperature deactivation  

DOE Patents (OSTI)

A multi-layer solar energy collector of improved stability comprising: (1) a solar absorptive film consisting essentially of copper oxide, cobalt oxide and manganese oxide; (2) a substrate of quartz, silicate glass or a stainless steel; and (3) an interlayer of platinum, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of platinum to obtain a stable conductor-dielectric tandem.

Jefferson, Clinton F. (Millburn, NJ)

1984-03-20T23:59:59.000Z

243

Module level solutions to solar cell polarization  

Science Conference Proceedings (OSTI)

A solar cell module includes interconnected solar cells, a transparent cover over the front sides of the solar cells, and a backsheet on the backsides of the solar cells. The solar cell module includes an electrical insulator between the transparent cover and the front sides of the solar cells. An encapsulant protectively packages the solar cells. To prevent polarization, the insulator has resistance suitable to prevent charge from leaking from the front sides of the solar cells to other portions of the solar cell module by way of the transparent cover. The insulator may be attached (e.g., by coating) directly on an underside of the transparent cover or be a separate layer formed between layers of the encapsulant. The solar cells may be back junction solar cells.

Xavier, Grace (Fremont, CA), Li; Bo (San Jose, CA)

2012-05-29T23:59:59.000Z

244

Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells  

DOE Green Energy (OSTI)

This report describes work to develop a highly accurate numerical model for CuInSe{sub 2} and CdTe solar cells. ADEPT (A Device Emulation Program and Toolbox), a one-dimensional semiconductor device simulation code developed at Purdue University, was used as the basis of this model. An additional objective was to use ADEPT to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. The work is being performed in two phases. The first phase involved collecting device performance parameters, cell structure information, and material parameters. This information was used to construct the basic models to simulate CuInSe{sub 2} and CdTe solar cells. This report is a tabulation of information gathered during the first phase of this project on the performance of existing CuInSe{sub 2} and CdTe solar cells, the material properties of CuInSr{sub 2}, CdTe, and CdS, and the optical absorption properties of CuInSe{sub 2}, CdTe, and CdS. The second phase will entail further development and the release of a version of ADEPT tailored to CuInSe{sub 2} and CdTe solar cells that can be run on a personal computer. In addition, ADEPT will be used to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. 110 refs.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. (Purdue Univ., Lafayette, IN (United States))

1992-04-01T23:59:59.000Z

245

Nanowire-based All Oxide Solar Cells  

E-Print Network (OSTI)

1999; 7: 471. 6) Rai, B.P. Solar Cells, 1988, 25, 265. 7)Paul, G.K. , Sakurai, T. , Solar Energy, 2006, 80, 715. 9)1999, 2) Green, M.A. , Solar Cells, 1982, Prentice-Hall,

Yang, Peidong

2009-01-01T23:59:59.000Z

246

Thin film cadmium telluride photovoltaic cells  

DOE Green Energy (OSTI)

This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

1992-04-01T23:59:59.000Z

247

Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells  

DOE Green Energy (OSTI)

This report describes work to develop an accurate numerical model for CuInSe{sub 2} (CIS) and CdTe-based solar cells capable of running on a personal computer. Such a model will aid researchers in designing and analyzing CIS- and CdTe-based solar cells. ADEPT (A Device Emulation Pregrain and Tool) was used as the basis for this model. An additional objective of this research was to use the models developed to analyze the performance of existing and proposed CIS- and CdTe-based solar cells. The development of accurate numerical models for CIS- and CdTe-based solar cells required the compilation of cell performance data (for use in model verification) and the compilation of measurements of material parameters. The development of the numerical models involved implementing the various physical models appropriate to CIS and CdTe, as well as some common window. A version of the model capable of running on an IBM-comparable personal computer was developed (primary code development is on a SUN workstation). A user-friendly interface with pop-up menus is continuing to be developed for release with the IBM-compatible model.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. (Purdue Univ., Lafayette, IN (United States))

1992-09-01T23:59:59.000Z

248

Development of copper sulfide/cadmium sulfide thin film solar cells. First technical progress report, 13 July 1979 to 12 October 1979  

DOE Green Energy (OSTI)

Preparation of CdS films by evaporation from a single graphite source, as generally used by the Institute of Energy Conversion (IEC) group at the University of Delaware, has been implemented. Previously at Westinghouse, four evaporation sources were used to permit uniform coverage of large area substrates. The graphite source used in this period is somewhat smaller than the IEC design to permit accommodation to the heater geometry currently available. Initial efforts with the single source evaporation have been on characterizing the thickness profiles of the deposited films. This is needed to permit selection of conditions for obtaining films of about 30..mu..m thickness over the central 4 cm x 4 cm area of the substrate. Barrier processing according to the details of IEC method has been used on four-source CdS films. To date the best cells have only been about 1% efficient. Low short circuit current density values (approx. 5 mA/cm/sub 2/) have been the biggest problem. Annealing in 6% H/sub 2//Ar mixtures at 170/sup 0/C after electrode grid evaporation generally has resulted in reduced values of J/sub sc/. Plans for the next period include the use of single source films for cell processing and the use of small area diode arrays to map cell performance parameters as a function of position on the substrate.

Szedon, J.R.; Shirland, F.A.; Stoll, J.A.; Dickey, H.C.

1980-02-14T23:59:59.000Z

249

EE580 Solar Cells Todd J. Kaiser  

E-Print Network (OSTI)

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 10 · Summary 1Montana State University: Solar Cells Lecture 10: Summary Summer 2010 Class Montana State University: Solar Cells Lecture 10: Summary 2 Solar Cell Operation n Emitter p Base Rear Contact Antireflection coating Absorption of photon

Kaiser, Todd J.

250

Solar cell with back side contacts  

SciTech Connect

A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

2013-12-24T23:59:59.000Z

251

Thermal Management of Solar Cells  

E-Print Network (OSTI)

as a source of photovoltaic energy is rapidly increasingphotovoltaic cells under concentrated illumination: a critical review," Solar Energyphotovoltaic/thermal collector, PV/T, and it utilizes both electrical and heat energies

Saadah, Mohammed Ahmed

2013-01-01T23:59:59.000Z

252

Cost Effectiveness for Solar Control Film for Residential Applications  

E-Print Network (OSTI)

For the existing housing, retrofitting single or double glazed clear glass window with solar films can be an effective measure to reduce their peak power demand, and large scale application of the same on national level can be an effective tool for demand side management. This paper analyses the field performance data of a solar control film, retrofitted in a Kuwait villa, for establishing its technical viability and cost effectiveness. The paper concludes that the solar film, besides enhancing the thermal comfort, reduced the peak cooling demand and the peak power demand by 6.7% and 4.7%, respectively, during the peak summer period.

Al-Taqi, H. H.; Maheshwari, G. P.; Alasseri, R.

2010-01-01T23:59:59.000Z

253

Investigation of polycrystalline thin film CuInSe{sub 2} solar cells based on ZnSe windows. Annual subcontract report, 15 February, 1993--14 February, 1994  

DOE Green Energy (OSTI)

This report concerns studies of CIS solar cells based on ZnSe window layers. ZnSe/CIS devices are fabricated by growing ZnSe films by MOCVD onto Siemens CIS and graded absorber substrates. ZnSe films are grown by reacting H{sub 2}Se with a zinc adduct. ZnSe/CIS heterojunctions have been studied by depositing transparent aluminum contacts onto ZnSe. These studies indicate that ZnSe/CIS solar cells can be fabricated with an efficiency greater than 14%. Open circuit voltages are typically larger than 500 mV and the optimum range of ZnSe film thickness for maximum efficiency is between 100 {angstrom} and 250 {angstrom}. Photocurrents are significantly reduced as the film thickness exceeds 250 {angstrom}. Photoluminescence spectroscopy has been utilized to characterize the physical nature of CIS substrate surfaces, and ZnSe-CIS interfaces. These studies indicate that a segregated phase(s) exists at the surface of as received Siemens substrates. Additionally, it is determined that the segregated phase(s) still exist after the ZnSe growth process. To date, sputtered ZnO top contact layers have caused degradation of the photovoltaic properties of the ZnSe/CIS structure. Investigations of the effects of MOCVD grown ZnO upon ZnSe/CIS structures will soon be initiated. To establish the feasibility of ZnSe as a window layer, cells have been fabricated by incorporating a protective layer of CdS between the ZnSe and ZnO. A total area efficiency of 11% was obtained with such a structure.

Olsen, L.C. [Washington State Univ., Richland, WA (United States)

1995-03-01T23:59:59.000Z

254

Process Development for High Voc CdTe Solar Cells  

DOE Green Energy (OSTI)

This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

Ferekides, C. S.; Morel, D. L.

2011-05-01T23:59:59.000Z

255

Success Stories: Solexant Nanocrystal Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Rolling Out Affordable Solar Energy The high cost of producing photovoltaic cells has been cited as the main obstacle in expanding solar energy's reach. Lawrence Berkeley National...

256

Solar cells with a twist Comments ( 35)  

E-Print Network (OSTI)

Solar cells with a twist Article Comments ( 35) JULIE STEENHUYSEN REUTERS OCTOBER 7, 2008 AT 9:58 AM EDT CHICAGO -- U.S. researchers have found a way to make efficient silicon-based solar cells of buildings as opportunities for solar energy," Prof. Rogers said in a telephone interview. Solar cells, which

Rogers, John A.

257

Nanocrystal Solar Cells  

E-Print Network (OSTI)

research on organic photovoltaic cells since small molecule10 years prior (4). Photovoltaic cells with an active layerof the associated photovoltaic cells. 2.4 Charge transport

Gur, Ilan

2006-01-01T23:59:59.000Z

258

High-Efficiency Polycrystalline CdTe Thin-Film Solar Cells with an Oxygenated Amorphous CdS (a-CdS:O) Window Layer: Preprint  

DOE Green Energy (OSTI)

In the conventional CdS/CdTe device structure, the poly-CdS window layer has a bandgap of {approx}2.4 eV, which causes absorption in the short-wavelength region. Higher short-circuit current densities (Jsc) can be achieved by reducing the CdS thickness, but this can adversely impact device open-circuit voltage (Voc) and fill factor (FF). Also, poly-CdS film has about 10% lattice mismatch related to the CdTe film, which limits the improvement of device Voc and FF. In this paper, we report a novel window material: oxygenated amorphous CdS film (a-CdS:O) prepared at room temperature by rf sputtering. The a-CdS:O film has a higher optical bandgap (2.5-3.1 eV) than the poly-CdS film and an amorphous structure. The preliminary device results have demonstrated that Jsc of the CdTe device can be greatly improved while maintaining higher Voc and FF. We have fabricated a CdTe cell demonstrating an NREL-confirmed Jsc of 25.85 mA/cm2 and a total-area efficiency of 15.4%.

Wu, X.; Dhere, R. G.; Yan, Y.; Romero, M. J.; Zhang, Y.; Zhou, J.; DeHart, C.; Duda, A.; Perkins, C.; To, B.

2002-05-01T23:59:59.000Z

259

Design Method for Light Absorption Enhancement in Ultra-Thin Film ...  

Science Conference Proceedings (OSTI)

ultra-thin film organic solar cells (OSCs) to improve the light absorption. ... In the promising field of solar cells, organic solar cells (OSCs) are advantageous in its...

260

Fabrication and Characterization of Organic Solar Cells  

E-Print Network (OSTI)

5 Figure 1-3 The Solar Spectrum at the Top of thesolar cells. Figure 1-3 The Solar Spectrum at the Top of thenarrow range of solar spectrum, as they are commonly known

Yengel, Emre

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Organic Solar Cells: Absolute Measurement of Domain Composition...  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic Solar Cells: Absolute Measurement of Domain Composition and Nanoscale Size Distribution Explains Performance in Solar Cells Organic Solar Cells: Absolute Measurement of...

262

Structure of Silicon-Based Thin Film Solar Cell Materials: Annual Technical Progress Report, 1 April 2002--31 August 2003  

DOE Green Energy (OSTI)

The purpose of this research is to achieve a better understanding to improve materials used as the intrinsic layers of amorphous and microcrystalline silicon-based solar cells. Fundamental structural properties will be investigated on atomic and nano-scales. A powerful combination of techniques will be used: analytical high-resolution transmission electron microscopy (HRTEM), including special associated spectroscopic methods, small-angle scattering techniques (SAXS, ASAXS, SANS), and conventional wide-angle X-ray diffraction (XRD).

Williamson, D. L.

2004-01-01T23:59:59.000Z

263

Preparation and properties of high-deposition-rate a-Si:H films and solar cells using disilane: Annual subcontract report, 1 May 1987--30 April 1988  

DOE Green Energy (OSTI)

This report contains results of the first year of research on producing p-i-n amorphous silicon solar cells with the intrinsic layer deposited from higher order silanes at deposition rates of 1 nm/s or more. The research was divided into three major areas: diagnostic studies of monosilane and disilane RF discharges using optical emission spectroscopy and mass spectrometry to assist in optimizing discharge conditions and gas-phase processes; parametric studies of material properties of 1-layers prepared form disilane as a function of deposition rate and other process parameters; and parametric studies of p-i-n devices with the i-layer prepared from disilane at various deposition rates. The focus during the first year was to fabricate a p-i-n solar cell with 9/percent/ AM1.5 efficiency over an area greater than 0.08 cm/sup 2/ with the i-layer deposited at 1 nm/s or more. Material properties such as the dark and AM1.5 light conductivities, optical band gap, and conductivity activation energy showed a weak dependence on deposition rate. The performance characteristics of unoptimized p-i-n solar cells with i-layers prepared from disilane were independent of the deposition rate of the i-layer. A p-i-n device was prepared at a rate close to 1 nm/s with an AM1.5 efficiency of 9/percent/. 20 refs, 26 figs, 2 tabs.

Bhat, P.K.; Chatham, H.; Madan, A.

1988-06-01T23:59:59.000Z

264

Silicon concentrator solar cell research  

DOE Green Energy (OSTI)

This report describes work conducted between December 1990 and May 1992 continuing research on silicon concentrator solar cells. The objectives of the work were to improve the performance of high-efficiency cells upon p-type substrates, to investigate the ultraviolet stability of such cells, to develop concentrator cells based on n-type substrates, and to transfer technology to appropriate commercial environments. Key results include the identification of contact resistance between boron-defused areas and rear aluminum as the source of anomalously large series resistance in both p- and n-type cells. A major achievement of the present project was the successful transfer of cell technology to both Applied Solar Energy Corporation and Solarex Corporation.

Green, M.A.; Zhao, J.; Wang, A.; Dai, X.; Milne, A.; Cai, S.; Aberle, A.; Wenham, S.R. [Univ. of New South Wales, Kensington, NSW (AU). Centre for Photovoltaic Devices and Systems

1993-06-01T23:59:59.000Z

265

Development of concentrator solar cells  

DOE Green Energy (OSTI)

A limited pilot production run on PESC silicon solar cells for use at high concentrations (200 to 400 suns) is summarized. The front contact design of the cells was modified for operation without prismatic covers. The original objective of the contract was to systematically complete a process consolidation phase, in which all the, process improvements developed during the contract would be combined in a pilot production run. This pilot run was going to provide, a basis for estimating cell costs when produced at high throughput. Because of DOE funding limitations, the Photovoltaic Concentrator Initiative is on hold, and Applied Solar`s contract was operated at a low level of effort for most of 1993. The results obtained from the reduced scope pilot run showed the effects of discontinuous process optimization and characterization. However, the run provided valuable insight into the technical areas that can be optimized to achieve the original goals of the contract.

Not Available

1994-08-01T23:59:59.000Z

266

Merocyanine-dye photovoltaic cell on a plastic film  

Science Conference Proceedings (OSTI)

A flexible photovoltaic cell was produced by depositing a merocyanine-dye layer on a transparent electro-conducting film, which is a polyester film coated with ITO (indium-tin oxide). Two kinds of the layered structures on the films were examined; i.e., Al/merocyanine/ITO and Ag/merocyanine/ZnO/ITO structures. It was found that the latter structure was more promising for a solar cell because of a considerably better output stability and a higher conversion effiency.

Moriizumi, T.; Kudo, K.

1981-01-15T23:59:59.000Z

267

Investigation of polycrystalline thin-film CuInSe{sub 2} solar cells based on ZnSe windows. Annual subcontract report, 15 Febraury 1992--14 February 1993  

DOE Green Energy (OSTI)

Investigations of ZnSe/CIS solar cells are being carried out in an effort to improve the efficiencies CIS cells and to determine if ZnSe is a viable alternative to CdS as a window material. MOCVD growth of ZnSe is accomplished in a SPIRE 500XT reactor housed in the Electronic Materials Laboratory at WSU Tri-Cities by reacting a zinc adduct with H{sub 2}Se. Conductive n-type ZnSe is grown by using iodine as a dopant. Ethyliodide was mixed with helium and installed on one of the gas lines to the system. ZnSe films have been grown on CIS substrates at 200{degrees}C to 250{degrees}C. ZnO is also being deposited by MOCVD by reacting tetrahydrofuran (THF) with a zinc adduct. ZnSe/CIS heterojunctions have been studied by growing n-ZnSe films onto 2 cm x 2 cm CIS substrates diced from materials supplied by Siemens and then depositing an array of aluminum circular areas 2.8.mm in diameter on top of the ZnSe to serve as contacts. Al films are deposited with a thickness of 80 to l00 {angstrom}so that light can pass through the film, thus allowing the illuminated characteristics of the ZnSe/CIS junction to be tested. Accounting for the 20 to 25 % transmittance through the Al film into the ZnSe/CIS structure, current devices have estimated, active-area AM1.5 efficiencies of 14 %. Open circuit voltages > 500 mV are often attained.

Olsen, L C [Washington State Univ. at Tri-Cities, Richland, WA (United States)

1994-05-01T23:59:59.000Z

268

TUTORIALS: Semiconductors & Electroceramics - Solar cell ... - TMS  

Science Conference Proceedings (OSTI)

Jan 21, 2008 ... This tutorial introduces the operation of p-n junction solar cells, discusses the CdS/CdTe solar cell in detail, and describes several deposition...

269

Biomimetic Dye Molecules for Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

provide opportunities for solid-state physicists and chemists to solve a major challenge: solar cell adoption. Though solar cells can use energy directly from the Sun to produce...

270

Cermet layer for amorphous silicon solar cells  

DOE Patents (OSTI)

A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.

Hanak, Joseph J. (Lawrenceville, NJ)

1979-01-01T23:59:59.000Z

271

EE580 Solar Cells Todd J. Kaiser  

E-Print Network (OSTI)

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 05 · P-N Junction 1Montana State University: Solar Cells Lecture 5: P-N Junction P-N Junction · Solar Cell is a large area P-N junction electron (hole) positive) 2Montana State University: Solar Cells Lecture 5: P-N Junction p-n Junction p n P

Kaiser, Todd J.

272

Process of making solar cell module  

DOE Patents (OSTI)

A process is presented for the manufacture of solar cell modules. A solution comprising a highly plasticized polyvinyl butyral is applied to a solar cell array. The coated array is dried and sandwiched between at last two sheets of polyvinyl butyral and at least two sheets of a rigid transparent member. The sandwich is laminated by the application of heat and pressure to cause fusion and bonding of the solar cell array with the rigid transparent members to produce a solar cell module.

Packer, M.; Coyle, P.J.

1981-03-09T23:59:59.000Z

273

Solar Cell Silicon - Programmaster.org  

Science Conference Proceedings (OSTI)

Jul 31, 2012 ... About this Symposium. Meeting, 2013 TMS Annual Meeting & Exhibition. Symposium, Solar Cell Silicon. Sponsorship, TMS Extraction and...

274

Improving the design of solar cells  

Science Conference Proceedings (OSTI)

Improving the design of solar cells. Photovoltaic (PV) systems convert the sun's light directly to electrical power by absorption ...

2012-10-02T23:59:59.000Z

275

Electron-Beam Irradiation of Solar Cells  

Science Conference Proceedings (OSTI)

Electron-Beam Irradiation of Solar Cells. Summary: The Dosimetry Group operates a system capable of performing electron ...

2013-02-27T23:59:59.000Z

276

Key Physical Mechanisms in Nanostructured Solar Cells  

DOE Green Energy (OSTI)

The objective of the project was to study both theoretically and experimentally the excitation, recombination and transport properties required for nanostructured solar cells to deliver energy conversion efficiencies well in excess of conventional limits. These objectives were met by concentrating on three key areas, namely, investigation of physical mechanisms present in nanostructured solar cells, characterization of loss mechanisms in nanostructured solar cells and determining the properties required of nanostructured solar cells in order to achieve high efficiency and the design implications.

Dr Stephan Bremner

2010-07-21T23:59:59.000Z

277

Institute of Photo Electronic Thin Film Devices and Technology...  

Open Energy Info (EERE)

Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices...

278

Compensated amorphous silicon solar cell  

DOE Patents (OSTI)

An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

Carlson, David E. (Yardley, PA)

1980-01-01T23:59:59.000Z

279

EE580 Solar Cells Todd J. Kaiser  

E-Print Network (OSTI)

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 02 Microfabrication ­ A combination · Photolithograpy · Depostion · Etching 1 Montana State University: Solar Cells Lecture 2: Microfabrication Flow Montana State University: Solar Cells Lecture 2: Microfabrication Questions · What is heat? · Heat

Kaiser, Todd J.

280

EE580 Solar Cells Todd J. Kaiser  

E-Print Network (OSTI)

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 07 · EE Fundamentals 1Montana State University: Solar Cells Lecture 7: EE Fundamentals What is Electrical Engineering · Opposite of lightning · Symbolic information: electronics Montana State University: Solar Cells Lecture 7: EE Fundamentals 2 Review

Kaiser, Todd J.

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

EE580 Solar Cells Todd J. Kaiser  

E-Print Network (OSTI)

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 03 · Nature of Sunlight 1Montana State University: Solar Cells Lecture 3: Nature of Sunlight Wave-Particle Duality · Light acts as ­ Waves University: Solar Cells Lecture 3: Nature of Sunlight Properties of Light · Sunlight contains photons of many

Kaiser, Todd J.

282

EE580 Solar Cells Todd J. Kaiser  

E-Print Network (OSTI)

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 04 · Semiconductor Materials · Chapter 1 1Montana State University: Solar Cells Lecture 4: Semiconductor Materials Semiconductor Bond Model · Bohr electrons interact to form bonds 2Montana State University: Solar Cells Lecture 4: Semiconductor Materials

Kaiser, Todd J.

283

Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields (Presentation)  

SciTech Connect

The conclusions of this report are that: (1) many issues how thin-film solar cells work remain unresolved, requiring further fundamental R and D effort; (2) commercial thin-film PV module production reached 29% in 2005 in the US, indicating much more rapid growth than crystalline Si PV; (3) commercial module performance is increasing based on current knowledge, more R and D will lead to further improvement; and (4) stability of thin-film modules is acceptable ({le} 1% per year power loss) if the right manufacturing processes are used for manufacturing.

von Roedern, B.; Ullal, H.; Zweibel, K.

2006-05-01T23:59:59.000Z

284

Alloys and Compounds for Thermoelectric and Solar Cell Applications  

Science Conference Proceedings (OSTI)

Alloys and Compounds for Thermoelectric and Solar Cell Applications II: Alloys and Compounds for Thermoelectric and Solar Cell Applications: Thermoelectric...

285

Solar module having reflector between cells  

DOE Patents (OSTI)

A photovoltaic module comprising an array of electrically interconnected photovoltaic cells disposed in a planar and mutually spaced relationship between a light-transparent front cover member in sheet form and a back sheet structure is provided with a novel light-reflecting means disposed between adjacent cells for reflecting light falling in the areas between cells back toward said transparent cover member for further internal reflection onto the solar cells. The light-reflecting comprises a flexible plastic film that has been embossed so as to have a plurality of small V-shaped grooves in its front surface, and a thin light-reflecting coating on said front surface, the portions of said coating along the sides of said grooves forming light-reflecting facets, said grooves being formed so that said facets will reflect light impinging thereon back into said transparent cover sheet with an angle of incidence greater than the critical angle, whereby substantially all of the reflected light will be internally reflected from said cover sheet back to said solar modules, thereby increasing the current output of the module.

Kardauskas, Michael J. (Billerica, MA)

1999-01-01T23:59:59.000Z

286

Fabrication and Characterization of Organic Solar Cells  

E-Print Network (OSTI)

treatment of indium tin oxide for organicsolarJR. CriteriaforITO(indium?tin?oxide)anorganic lightexpansive material, indium thin oxide (ITO) thin films, with

Yengel, Emre

2010-01-01T23:59:59.000Z

287

Defect behavior of polycrystalline solar cell silicon  

DOE Green Energy (OSTI)

The major objective of this study, conducted from October 1988 to September 1991, was to gain an understanding of the behavior of impurities in polycrystalline silicon and the influence of these impurities on solar cell efficiency. The authors studied edge-defined film-fed growth (EFG) and cast poly-Si materials and solar cells. With EFG Si they concentrated on chromium-doped materials and cells to determine the role of Cr on solar cell performance. Cast poly-Si samples were not deliberately contaminated. Samples were characterized by cell efficiency, current-voltage, deep-level transient spectroscopy (DLTS), surface photovoltage (SPV), open-circuit voltage decay, secondary ion mass spectrometry, and Fourier transform infrared spectroscopy measurements. They find that Cr forms Cr-B pairs with boron at room temperature and these pairs dissociate into Cr{sub i}{sup +} and B{sup {minus}} during anneals at 210{degrees}C for 10 min. Following the anneal, Cr-B pairs reform at room temperature with a time constant of 230 h. Chromium forms CrSi{sub 2} precipitates in heavily contaminated regions and they find evidence of CrSi{sub 2} gettering, but a lack of chromium segregation or precipitation to grain boundaries and dislocations. Cr-B pairs have well defined DLTS peaks. However, DLTS spectra of other defects are not well defined, giving broad peaks indicative of defects with a range of energy levels in the band gap. In some high-stress, low-efficiency cast poly-Si they detect SiC precipitates, but not in low-stress, high-efficiency samples. SPV measurements result in nonlinear SPV curves in some materials that are likely due to varying optical absorption coefficients due to locally varying stress in the material.

Schroder, D.K.; Park, S.H.; Hwang, I.G.; Mohr, J.B.; Hanly, M.P. [Arizona State Univ., Tempe, AZ (US). Center for Solid State Electronics Research

1993-05-01T23:59:59.000Z

288

Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby  

DOE Patents (OSTI)

A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.

Gonzalez, Franklin N. (Gainesville, FL); Neugroschel, Arnost (Gainesville, FL)

1984-02-14T23:59:59.000Z

289

CIBS Solar Cell Development  

DOE Green Energy (OSTI)

This research focused on efforts to prepare and characterize the first copper-indium-boron-diselenide (CIBS) photovoltaic materials. Attempts to fabricate CIBS in thin-film form followed a three-step process: 1) RF sputtering of copper, indium, and boron to form a copper-indium-boron (CIB) alloy; 2) ex-situ selenization of CIB via physical vapor deposition; 3) annealing the final product. No CIBS materials were produced with this method due to the formation of an unstable boron diselenide species that formed in step 2. Detailed investigations of the CIB alloy formation revealed that boron does not adequately mix with the copper and indium in step 1. In the last year, a nanoscience-based method has shown greater promise for successful CIBS preparation. In this two-step method, sources of copper, indium, boron, and selenium are combined and heated in a high-boiling amine solvent. The isolated product is then annealed at temperatures between 400-500 deg. C. Currently, purified CIBS has not been isolated and characterized but further study and development of this nanoscience-based method is in progress through the support of two grants from the DOE Office of Energy Renewability and Efficiency and the State of Nebraskas Nebraska Research Initiative program. The research described in this report resulted in four scientific publications and 12 presentations at regional, national and international scientific and engineering conferences.

Exstrom, Christopher L.

2008-10-06T23:59:59.000Z

290

Property Influence of Polyanilines on Photovoltaic Behaviors of Dye-Sensitized Solar Cells  

E-Print Network (OSTI)

Property Influence of Polyanilines on Photovoltaic Behaviors of Dye-Sensitized Solar Cells Shuxin conductors on the photovoltaic behaviors of dye-sensitized solarcellsisstudied of both the film formation property and the cluster size of polyanilines on the photovoltaic behaviors

291

Solar cell emulator and solar cell characteristics measurements in dark and illuminated conditions  

Science Conference Proceedings (OSTI)

This paper describes a novel data acquisition system designed and implemented with facilities for measuring and monitoring the characteristics of a PV solar cell, module and/or system. The functioning of the equipment is based on the so-called virtual ... Keywords: AVR microcontroller, I-V curve measurements, LabVIEW, solar cell emulator, solar cells & solar array

Yousry Atia; Mohamed Zahran; Abdullah Al-Hossain

2011-04-01T23:59:59.000Z

292

Solar cells Improved Hybrid Solar Cells via in situ UV Polymerization  

E-Print Network (OSTI)

Solar cells Improved Hybrid Solar Cells via in situ UV Polymerization Sanja Tepavcevic, Seth B-enhanced solar energy conversion. By using this simple in situ UV polymerization method that couples mobility of the photoactive layer can be enhanced. 1. Introduction Hybrid solar cells have been developed

Sibener, Steven

293

Solar Energy Materials & Solar Cells 91 (2007) 15991610 Improving solar cell efficiency using photonic band-gap materials  

E-Print Network (OSTI)

Solar Energy Materials & Solar Cells 91 (2007) 1599­1610 Improving solar cell efficiency using Propulsion Laboratory, California Institute of Technology, Mail Stop T1714 106, 4800 Oak Grove Drive and reliable solar-cell devices is presented. We show that due their ability to modify the spectral and angular

Dowling, Jonathan P.

294

An Identification of Technology Opportunity on Dye-Sensitized Solar Cell  

Science Conference Proceedings (OSTI)

Solar cell, one of green energies, is growing at a fast pace with its clean and renewable characters in recent 20 years. Patent data contains plentiful technological information from which it is worthwhile to extract further knowledge. Thus, a research ... Keywords: grounded theory, association analysis, technology opportunity, thin-film solar cell, patent data

Tzu-Fu Chiu; Chao-Fu Hong; Chun-An Pai; Shih-Wei Yang

2012-09-01T23:59:59.000Z

295

High efficiency, radiation-hard solar cells  

DOE Green Energy (OSTI)

The direct gap of the In{sub 1-x}Ga{sub x}N alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). This opens the intriguing possibility of using this single ternary alloy system in single or multi-junction (MJ) solar cells of the type used for space-based surveillance satellites. To evaluate the suitability of In{sub 1-x}Ga{sub x}N as a material for space applications, high quality thin films were grown with molecular beam epitaxy and extensive damage testing with electron, proton, and alpha particle radiation was performed. Using the room temperature photoluminescence intensity as a indirect measure of minority carrier lifetime, it is shown that In{sub 1-x}Ga{sub x}N retains its optoelectronic properties at radiation damage doses at least 2 orders of magnitude higher than the damage thresholds of the materials (GaAs and GaInP) currently used in high efficiency MJ cells. This indicates that the In{sub 1-x}Ga{sub x}N is well-suited for the future development of ultra radiation-hard optoelectronics. Critical issues affecting development of solar cells using this material system were addressed. The presence of an electron-rich surface layer in InN and In{sub 1-x}Ga{sub x}N (0 < x < 0.63) was investigated; it was shown that this is a less significant effect at large x. Evidence of p-type activity below the surface in Mg-doped InN was obtained; this is a significant step toward achieving photovoltaic action and, ultimately, a solar cell using this material.

Ager III, J.W.; Walukiewicz, W.

2004-10-22T23:59:59.000Z

296

Dye-sensitized Schottky barrier solar cells  

DOE Patents (OSTI)

A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

Skotheim, Terje A. (Berkeley, CA)

1978-01-01T23:59:59.000Z

297

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for the Development of Polycrystalline Multijunctions Annual Subcontract Report, 24 August 1999 - 23 August 2000  

DOE Green Energy (OSTI)

This report describes the results achieved during Phase I of a three-phase subcontract to develop and understand thin-film solar cell technology associated with CuInSe2 and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for developing viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient, and with respect to device structure and module encapsulation.

Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Eser, E.; Hegedus, S. S.; McCandless, B. E.

2001-11-14T23:59:59.000Z

298

Approaches to Future Generation Photovoltaics and Solar Fuels: Quantum Dots, Arrays, and Quantum Dot Solar Cells  

Science Conference Proceedings (OSTI)

One potential, long-term approach to more efficient and lower cost future generation solar cells for solar electricity and solar fuels is to utilize the unique properties of quantum dots (QDs) to control the relaxation pathways of excited states to enhance multiple exciton generation (MEG). We have studied MEG in close-packed PbSe QD arrays where the QDs are electronically coupled in the films and thus exhibit good transport while still maintaining quantization and MEG. We have developed simple, all-inorganic solution-processable QD solar cells that produce large short-circuit photocurrents and power conversion efficiencies above 5% via nanocrystalline p-n junctions. These solar cells show QYs for photocurrent that exceed 100% in the photon energy regions where MEG is possible; the photocurrent MEG QYs as a function of photon energy match those determined via time-resolved spectroscopy Recent analyses of the major effect of MEG combined with solar concentration on the conversion efficiency of solar cells will also be discussed.

Semonin, O.; Luther, J.; Beard, M.; Johnson, J.; Gao, J.; Nozik, A.

2012-01-01T23:59:59.000Z

299

A replaceable reflective film for solar concentrators  

DOE Green Energy (OSTI)

The 3M Company manufactures a silvered acrylic film called ECP-305 that is regarded as the preferred reflective film for use on stretched-membrane heliostats. However, ECP-305 will degrade in time, due to both corrosion of the silver layer and delamination at the film's silver-to-acrylic interface, and will eventually need to be replaced. 3M uses a very aggressive adhesive on this film, and once it is laminated, replacement is very difficult. The purpose of this investigation was the development of a replaceable reflector, a reflective film that can be easily removed and replaced. A replaceable reflector was successfully configured by laminating ECP-305 to the top surface of a smooth, dimensionally stable polymer film, with a removable adhesive applied to the underside of the polymer film. Several stages of screening and testing led to the selection of a 0.010-inch thick polycarbonate (GE 8030) as the best polymer film and a medium tack tape (3M Y-9425) was selected as the best removable adhesive. To demonstrate the feasibility of the replaceable reflector concept and to provide a real-time field test, the chosen construction was successfully applied to the 50-m{sup 2} SKI heliostat at the Central Receiver Test Facility at Sandia National Laboratories in Albuquerque. 4 refs., 13 figs., 7 tabs.

Not Available

1991-09-01T23:59:59.000Z

300

DIFFRA TION: ENHAN ED LIGHT A SORPTION OF SOLAR ELLS AND PHOTODETE ...  

POTENTIAL APPLI ATIONS Improved performance of thin For more information or Solar & renewable energy Photovoltaic Thin-film solar cells

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Compensated amorphous silicon solar cell  

SciTech Connect

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

Devaud, Genevieve (629 S. Humphrey Ave., Oak Park, IL 60304)

1983-01-01T23:59:59.000Z

302

Microscopic Mechanism of the Staebler-Wronski Effect in a-Si Films and High-Efficiency Solar Cells: Final Subcontract Report, 1 October 2001--30 September 2004  

DOE Green Energy (OSTI)

In high growth rate ({ge} 50 {angstrom}/s) HW-CVD a-Si:H films, for the first time, we show gaseous molecules in nanovoids ({approx}2% volume fraction of tube-like nanoscale voids), and demonstrate that confinement on the nanometer scale generates NMR effects that have never been observed in macroscopic systems. In the same system we found the PL peak red shift. We suggest that highly strained bonds on the inner surfaces of the nanoscale voids form broad conduction-band tail states that are responsible for the PL red shift. We characterized the structural transition from a- to nc-Si as function of H-dilution, thickness and T{sub s} of both HW- and PE-CVD films using IR, Raman, PL, CPM/PDS and E{sub a} et al. We found not only the c-Si volume fraction but also the g.b. and microstructures play an important role in the properties of the i-layer and their solar cell performance. We found a narrow structural transition zone in which the bond-angle variation, {Delta}{Theta}, decreases from 10{sup o} to 8{sup o}. For nc-Si samples, we found a characteristic low energy PL peak and proved that is originated from the g.b. regions. Using micro-Raman, we found the structural non-uniformity in the mixed-phase solar cells that showed V{sub oc} enhancement after light soaking. Using micro-Raman, we also found the slight increase of crystallinity in M/{mu}c-Si/M devices after current forming.

Han, D.

2005-05-01T23:59:59.000Z

303

Numericl modeling of graded band gap CIGS solar cells  

DOE Green Energy (OSTI)

The high efficiency reported recently by NREL for CIGS solar cells demonstrates the potential of band gap grading in producing high efficiency thin film solar cells. In order to reap the full benefits of this design strategy, a clear understanding of the fundamental device physics of these structures is needed. The purpose of this paper is to examine the role grading of the band gap plays in achieving high conversion efficiencies. To aid in this examination, a detailed numerical device simulation program, ADEPT, is used.

Gray, J.L.; Lee, Youn Jung

1994-12-31T23:59:59.000Z

304

Organic Solar Cells: Absolute Measurement of Domain Composition and  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic Solar Cells: Absolute Organic Solar Cells: Absolute Measurement of Domain Composition and Nanoscale Size Distribution Explains Performance in Solar Cells Organic Solar Cells: Absolute Measurement of Domain Composition and Nanoscale Size Distribution Explains Performance in Solar Cells Print Tuesday, 22 January 2013 00:00 This front cover represents the morphology and resulting device dynamics in organic solar cell blend films of PTB7 and PC71BM, as revealed by combined resonant x-ray scattering and microscopy done at the Advanced Light Source. Harald Ade and co-workers find that the fullerene molecules (red) are miscible in the polymer (blue) up to 30 wt.%, above which they begin to agglomerate (bottom). This agglomeration is important for the optoelectronic processes within the device, but the agglomerates must be kept to small sizes by the solvent processing additive diiodooctane (DIO). Correlation of this morphology with the spectrally resolved quantum efficiency shows that the yellow excitons created upon photoabsorption must arrive at the agglomerate interface for charge separation to occur. The blue electrons and green holes can then percolate through appropriate molecules in the mixed matrix to the electrodes for harvesting of electrical energy. Article Link (PDF)

305

Spectral sensitization of nanocrystalline solar cells  

DOE Patents (OSTI)

This invention relates to dye sensitized polycrystalline photoelectrochemical solar cells for use in energy transduction from light to electricity. It concerns the utility of highly absorbing organic chromophores as sensitizers in such cells and the degree to which they may be utilized alone and in combination to produce an efficient photoelectrochemical cell, e.g., a regenerative solar cell.

Spitler, Mark T. (Concord, MA); Ehret, Anne (Malden, MA); Stuhl, Louis S. (Bedford, MA)

2002-01-01T23:59:59.000Z

306

Parabolic-Dish Solar Concentrators of Film on Foam  

E-Print Network (OSTI)

Parabolic and spherical mirrors are constructed of aluminized PET polyester film on urethane foam. During construction, the chosen shape of the mirror is created by manipulating the elastic/plastic behavior of the film with air pressure. Foam is then applied to the film and, once hardened, air pressure is removed. At an f-number of 0.68, preliminary models have an optical angular spread of less than 0.25 degrees, a factor of 3.3 smaller than that for a perfectly spherical mirror. The possibility exists for creating large-lightweight mirrors with excellent shape and stiffness. These "film-on-foam" construction techniques may also be applicable to parabolic-trough solar concentrators but do not appear to be suitable for optical imaging applications because of irregularities in the film.

Barton, Sean A

2009-01-01T23:59:59.000Z

307

Three-junction solar cell  

SciTech Connect

A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

Ludowise, Michael J. (Cupertino, CA)

1986-01-01T23:59:59.000Z

308

VISUALS: Photovoltaic Solar Cells Close-Up  

Science Conference Proceedings (OSTI)

Jan 10, 2008 ... This site contains very close-up static and portrait shots of photovoltaic solar cells and cell arrays. Two cell types are shown: A silver and gray...

309

Solar Thin Films Inc formerly American United Global Inc | Open Energy  

Open Energy Info (EERE)

Films Inc formerly American United Global Inc Films Inc formerly American United Global Inc Jump to: navigation, search Name Solar Thin Films Inc (formerly American United Global Inc) Place New York, New York Zip 10038 Sector Solar Product A US-based solar manufacturing equipment supplier. References Solar Thin Films Inc (formerly American United Global Inc)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Thin Films Inc (formerly American United Global Inc) is a company located in New York, New York . References ↑ "Solar Thin Films Inc (formerly American United Global Inc)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Thin_Films_Inc_formerly_American_United_Global_Inc&oldid=351338

310

Thin-film absorber for a solar collector  

DOE Green Energy (OSTI)

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, W.G.

1982-02-09T23:59:59.000Z

311

Research on polycrystalline thin-film materials, cells, and modules  

DOE Green Energy (OSTI)

The US Department of Energy (DOE) supports research activities in polycrystalline thin films through the Polycrystalline Thin-Film Program at the Solar Energy Research Institute (SERI). This program includes research and development (R D) in both copper indium diselenide and cadmium telluride thin films for photovoltaic applications. The objective of this program is to support R D of photovoltaic cells and modules that meet the DOE long-term goals of high efficiency (15%--20%), low cost ($50/m{sup 2}), and reliability (30-year life time). Research carried out in this area is receiving increased recognition due to important advances in polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules. These have become the leading thin-film materials for photovoltaics in terms of efficiency and stability. DOE has recognized this potential through a competitive initiative for the development of CuInSe{sub 2} and CdTe modules. This paper focuses on the recent progress and future directions of the Polycrystalline Thin-Film Program and the status of the subcontracted research on these promising photovoltaic materials. 26 refs., 12 figs, 1 tab.

Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

1990-11-01T23:59:59.000Z

312

Photovoltaic Single-Crystalline, Thin-Film Cell Basics | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Single-Crystalline, Thin-Film Cell Basics Single-Crystalline, Thin-Film Cell Basics Photovoltaic Single-Crystalline, Thin-Film Cell Basics August 20, 2013 - 2:50pm Addthis Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic. Gallium arsenide (GaAs) is a compound semiconductor, a mixture of gallium and arsenic. Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and it is rarer than gold. Arsenic is not rare, but it is poisonous. Gallium arsenide has been developed for use in solar cells at about the same time that it has been developed for light-emitting diodes, lasers, and other electronic devices that use light. GaAs solar cells offer several benefits: The GaAs bandgap is 1.43 eV-nearly ideal for single-junction solar

313

Immersion Cooling of Photovoltaic Cells in Highly Concentrated Solar Beams.  

E-Print Network (OSTI)

??Concentrated solar radiation can be utilized to generate electrical power from photovoltaic cells, but concentrated solar radiation increases the photovoltaic cells temperature. This increase in (more)

Darwish, Ahmed

2011-01-01T23:59:59.000Z

314

Solar Cell Modules With Improved Backskin  

SciTech Connect

A laminated solar cell module comprises a front light transmitting support, a plurality of interconnected solar cells encapsulated by a light-transmitting encapsulant material, and an improved backskin formed of an ionomer/nylon alloy. The improved backskin has a toughness and melting point temperature sufficiently great to avoid any likelihood of it being pierced by any of the components that interconnect the solar cells.

Gonsiorawski, Ronald C. (Danvers, MA)

2003-12-09T23:59:59.000Z

315

Bypass diode for a solar cell  

SciTech Connect

Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

Rim, Seung Bum (Palo Alto, CA); Kim, Taeseok (San Jose, CA); Smith, David D. (Campbell, CA); Cousins, Peter J. (Menlo Park, CA)

2012-03-13T23:59:59.000Z

316

Magnetically Guided Shaping for Solar Cell Silicon Applications  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2014 TMS Annual Meeting & Exhibition. Symposium , Solar Cell Silicon. Presentation Title, Magnetically Guided Shaping for Solar...

317

Highly Efficient Multigap Solar Cell Materials  

Scientists at Berkeley Lab have invented multiband gap semiconducting materials for developing solar cells that could achieve power conversion efficiencies of 50 percent or higher.

318

The Quest for Inexpensive Silicon Solar Cells  

To learn more about NREL's silicon solar cell research, visit the Silicon Materials and Devices Web site. Did you find what you needed? Yes No. Thank ...

319

Efficient Polymer Solar Cells - Energy Innovation Portal  

Ames Laboratory researchers have developed a process for producing more efficient polymer solar cells by increasing light absorption through a thin ...

320

Electrical Modeling of Polymer Solar Cell  

Science Conference Proceedings (OSTI)

A numerical model to predict the current-voltage curves of bilayer polymer solar cell. The model includes drift and diffusion currents, injection and extraction at...

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Improved monolithic tandem solar cell  

DOE Patents (OSTI)

A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surf ace of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched.

Wanlass, M.W.

1991-04-23T23:59:59.000Z

322

Front contact solar cell with formed emitter  

SciTech Connect

A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

Cousins, Peter John (Menlo Park, CA)

2012-07-17T23:59:59.000Z

323

Method for processing silicon solar cells  

DOE Patents (OSTI)

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

1997-05-06T23:59:59.000Z

324

Method for processing silicon solar cells  

DOE Patents (OSTI)

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

1997-01-01T23:59:59.000Z

325

Development of an all-metal thick film cost effective metallization system for solar cells. Final report, May 1980-January 1983  

DOE Green Energy (OSTI)

Properties of copper pastes did not reproduce earlier results in rheology and metallurgy. Electrodes made with pastes produced under the previous contract were analyzed and raw material characteristics were compared. A needle-like structure was observed on the earlier electroded solar cells, and was identified as eutectic copper-silicon. Experiments were conducted with variations in paste parameters, firing conditions, including gas ambients, furnace furniture, silicon surface and others to improve performance characteristics. Improved adhesion with copper pastes containing silver fluoride, as well as those containing fluorocarbon powder was obtained. Front contact experiments were done with silver fluoride activated pastes on bare silicon, silicon oxide and silicon nitride coated silicon wafers. Adhesion of pastes with AgF on silicon nitride coated wafers was good, but indications were that all cells were shunted and the conclusion was that these systems were unsuitable for front contacts. Experiments with aluminum back surfaces and screened contacts to that surface were begun. Low temperature firing tended to result in S shaped IV curves. This was attributed to a barrier formed at the silicon-copper interface. A cooperative experiment was initiated on the effect of heat-treatments in various atmospheres on the hydrogen profile of silicon surfaces. Contact theory was explored to determine the role of various parameters on tunneling and contact resistance. Data confirm that the presence of eutectic Al-Si additions are beneficial for low contact resistance and fill factors in back contacts. Copper pastes with different silver fluoride additions were utilized as front contacts at two temperatures. Data shows various degrees of shunting. Finally, an experiment was run with carbon monoxide gas used as the reducing ambient during firing.

Ross, B.; Parker, J.

1983-12-01T23:59:59.000Z

326

Current and lattice matched tandem solar cell  

DOE Patents (OSTI)

A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga.sub.x In.sub.1-x P (0.505.ltoreq.X.ltoreq.0.515) top cell semiconductor lattice matched to a GaAs bottom cell semiconductor at a low-resistance heterojunction, preferably a p+/n+ heterojunction between the cells. The top and bottom cells are both lattice matched and current matched for high efficiency solar radiation conversion to electrical energy.

Olson, Jerry M. (Lakewood, CO)

1987-01-01T23:59:59.000Z

327

Structure of All-Polymer Solar Cells Impedes Efficiency  

NLE Websites -- All DOE Office Websites (Extended Search)

Structure of All-Polymer Solar Structure of All-Polymer Solar Cells Impedes Efficiency Structure of All-Polymer Solar Cells Impedes Efficiency Print Wednesday, 27 October 2010 00:00 Organic solar cells are made of thin layers of interpenetrating structures from two different conducting organic materials and are increasingly popular because they are both potentially cheaper to make than those currently in use and can be "painted" or printed onto a variety of surfaces, including flexible films made from the same material as most soda bottles. A large community is exploring a number of promising material combinations (polymer/fullerene, polymer/inorganic, all-polymer, and dye-sensitized cells), seeking a deeper understanding of their fundamental structure, operation, and limitations. A team of researchers from North Carolina State University and the UK has now found, through microscopy and resonant scattering and reflectivity studies at ALS Beamlines 6.3.2 and 5.3.2, that the low rate of energy conversion in model all-polymer solar cells is caused by domains that are too large and interfaces that are not sharp enough. This insight will lead to new approaches to all-polymer device technology that will help realize the intrinsic potential of these materials.

328

Reducing the Cost of Solar Cells  

Science Conference Proceedings (OSTI)

Solar-powered electricity prices could soon approach those of power from coal or natural gas thanks to collaborative research with solar startup Ampulse Corporation at the National Renewable Energy Laboratory. Silicon wafers account for almost half the cost of today's solar photovoltaic panels, so reducing or eliminating wafer costs is essential to bringing prices down. Current crystalline silicon technology converts energy in a highly efficient manner; however, that technology is manufactured with processes that could stand some improvement. The industry needs a method that is less complex, creates less waste and uses less energy. First, half the refined silicon is lost as dust in the wafer-sawing process, driving module costs higher. Wafers are sawn off of large cylindrical ingots, or boules, of silicon. A typical 2-meter boule loses as many as 6,000 potential wafers during sawing. Second, the wafers produced are much thicker than necessary. To efficiently convert sunlight into electricity, the wafers need be only one-tenth the typical thickness. NREL, the Oak Ridge National Laboratory and Ampulse have partnered on an approach to eliminate this waste and dramatically lower the cost of the finished solar panels. By using a chemical vapor deposition process to grow the silicon on inexpensive foil, Ampulse is able to make the solar cells just thick enough to convert most of the solar energy into electricity. No more sawdust - and no more wasting refined silicon materials. NREL developed the technology to grow high-quality silicon and ORNL developed the metal foil that has the correct crystal structure to support that growth. Ampulse is installing a pilot manufacturing line in NREL's Process Development Integration Laboratory, where solar companies can work closely with lab scientists on integrated equipment to answer pressing questions related to their technology development, as well as rapidly overcoming R and D challenges and risk. NREL's program is focused on transformative innovation in the domestic PV industry. With knowledge and expertise acquired from the PDIL pilot production line tools, Ampulse plans to design a full-scale production line to accommodate long rolls of metal foil. The Ampulse process 'goes straight from pure silicon-containing gas to high-quality crystal silicon film,' said Brent Nelson, the operational manager for the Process Development Integration Laboratory. 'The advantage is you can make the wafer just as thin as you need it - 10 microns or less.' Most of today's solar cells are made out of wafer crystalline silicon, though thin-film cells made of more exotic elements such as copper, indium, gallium, arsenic, cadmium, tellurium and others are making a strong push into the market. The advantage of silicon is its abundance, because it is derived from sand. Silicon's disadvantage is that purifying it into wafers suitable for solar cells can be expensive and energy intensive. Manufacturers add carbon and heat to sand to produce metallurgical-grade silicon, which is useful in other industries, but not yet suitable for making solar cells. So this metallurgical-grade silicon is then converted to pure trichlorosilane (SiCl3) or silane (SiH4) gas. Typically, the purified gas is then converted to create a silicon feedstock at 1,000 degrees Celsius. This feedstock is melted at 1,414 C and recrystallized into crystal ingots that are finally sawed into wafers. The Ampulse method differs in that it eliminates the last two steps in the traditional process and works directly with the silane gas growing only the needed silicon right onto a foil substrate. A team of NREL scientists had developed a way to use a process called hot-wire chemical vapor deposition to thicken silicon wafers with near perfect crystal structure. Using a hot tungsten filament much like the one found in an incandescent light bulb, the silane gas molecules are broken apart and deposited onto the wafer using the chemical vapor deposition technique at about 700 C - a much lower temperature than needed to make the wafer. The hot filament dec

Scanlon, B.

2012-04-01T23:59:59.000Z

329

Amorphous silicon solar cell allowing infrared transmission  

DOE Patents (OSTI)

An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

Carlson, David E. (Yardley, PA)

1979-01-01T23:59:59.000Z

330

Optimized Designs and Materials for Nanostructure Based Solar Cells  

E-Print Network (OSTI)

of the intermediate band solar cell under nonideal spaceefficient InGaP/GaAs tandem solar cells, Appl. Phys. Lett.band impact ionization and solar cell efficiency, J. Appl.

Shao, Qinghui

2009-01-01T23:59:59.000Z

331

CRADA Final Report: Process development for hybrid solar cells  

E-Print Network (OSTI)

development for hybrid solar cells Summary of the specific20 wafers with full tandem solar cell test structure perIIINitride/Silicon Tandem Solar Cell, Appl. Phys. Express

Ager, Joel W

2011-01-01T23:59:59.000Z

332

Si concentrator solar cell development. [Final report  

DOE Green Energy (OSTI)

This is the final report of a program to develop a commercial, high-efficiency, low-cost concentrator solar cell compatible with Spectrolab`s existing manufacturing infrastructure for space solar cells. The period covered is between 1991 and 1993. The program was funded through Sandia National Laboratories through the DOE concentrator initiative and, was also cost shared by Spectrolab. As a result of this program, Spectrolab implemented solar cells achieving an efficiency of over 19% at 200 to 300X concentration. The cells are compatible with DOE guidelines for a cell price necessary to achieve a cost of electricity of 12 cents a kilowatthour.

Krut, D.D. [Spectrolab, Inc., Sylmar, CA (United States)

1994-10-01T23:59:59.000Z

333

High deposition rate preparation of amorphous silicon solar cells by rf glow discharge decomposition of disilane  

SciTech Connect

The optical and electrical properties of hydrogenated amorphous silicon films produced by rf glow discharge decomposition of disilane diluted in helium (Si/sub 2/H/sub 6//He = 1/9) have been studied while systematically varying the film deposition rate. The properties and composition of the films were monitored by measuring the optical band gap, IR vibrational spectrum, dark conductivity, and the photoconductivity as a function of the deposition rate. The photoluminescence of the high deposition rate films gave a peak at 1.33 eV. These films, whose properties are rather similar to those of the conventional a-Si:H films prepared from monosilane, have been used to fabricate nip-type a-Si:H solar cells. At a deposition rate of 11 A/sec, a conversion efficiency of 6.86% was obtained. This high efficiency shows that disilane is applicable for mass production fabrication of a-Si:H solar cells.

Kenne, J.; Ohashi, Y.; Matsushita, T.; Konagai, M.; Takahashi, K.

1984-01-15T23:59:59.000Z

334

Low-Cost Nano-Patterning Process Makes Millions of Holes in Silver Film, Boosting Light-Capturing Qualities of Solar Cells (Fact Sheet)  

DOE Green Energy (OSTI)

NREL researchers have demonstrated a simple, low-cost way to pattern nano-sized holes in thin silver films in order to trap light waves and boost the transmission of photons into usable energy.

Not Available

2011-02-01T23:59:59.000Z

335

Enabling Thin Silicon Solar Cell Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Enabling Thin Silicon Solar Cell Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45°, -45°, and dendritic crack patterns. The effort to shift U.S. energy reliance from fossil fuels to renewable sources has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics (SPVs). The use of thinner silicon in SPV technologies is being widely adopted because it significantly reduces costs; however, silicon is brittle, and thinner silicon, coupled with other recent trends in SPV technologies (thinner glass, lighter or no metal frames, increased use of certain polymers for encapsulation of the silicon cells), is more susceptible to stress and cracking. When the thin

336

Joint Development of Coated Conductor and Low Cost Thin Film Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-007-213  

DOE Green Energy (OSTI)

UES plans on developing CIGS thin films by using Metal Organic Deposition (MOD) technique as it is a low-cost, non-vacuum method for scale-up to large area PV modules. NREL will support UES, Inc. through expert processing, characterization and device fabrication. NREL scientists will also help develop a processing phase diagram which includes composition, film thickness, annealing temperature and ambient conditions. Routine measurements of devices and materials will be done under NREL's core support project.

Bhattacharya, R.

2011-02-01T23:59:59.000Z

337

New solar cells seem to have power at the right price  

Science Conference Proceedings (OSTI)

Efficiency versus cost is a trade-off that bedevils makers of solar cells. Cells made from wafers of crystalline silicon are good at absorbing phontons and converting them to electricity. But they cost a lot to make. In contrast noncrystalline cells make from an ultrathink film, amorphous silicon are much cheaper, but their efficiency is half of their counterparts. New thin-film materials are showing signs that they can be both inexpensive and efficient. This article describes the new break throughs and research in solar cell technology.

Service, R.F.

1996-06-21T23:59:59.000Z

338

Controlled Structure of Organic-Nanomaterial Solar Cells - Energy ...  

Technology Marketing Summary Organic, polymer-based solar cellslightweight alternatives to conventional, silicon-based solar cellshave great potential for ...

339

Structure of All-Polymer Solar Cells Impedes Efficiency  

NLE Websites -- All DOE Office Websites (Extended Search)

Structure of All-Polymer Solar Cells Impedes Efficiency Print Organic solar cells are made of thin layers of interpenetrating structures from two different conducting organic...

340

New Morphological Paradigm Uncovered in Organic Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

New Morphological Paradigm Uncovered in Organic Solar Cells Print Organic solar cells are made of light, flexible, renewable materials; they require simple and inexpensive...

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Potential of Silicon Solar Cells from Metallurgical Process Route  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2013 TMS Annual Meeting & Exhibition. Symposium , Solar Cell Silicon. Presentation Title, Potential of Silicon Solar Cells from...

342

Alloys and Compounds for Thermoelectric and Solar Cell Applications  

Science Conference Proceedings (OSTI)

Alloys and Compounds for Thermoelectric and Solar Cell Applications II: Alloys and Compounds for Thermoelectric and Solar Cell Applications: Thermoelectric I

343

Techniques of Nanoscale Silicon Texturing of Solar Cells ...  

Patent 6,329,296: Metal catalyst technique for texturing silicon solar cells Textured silicon solar cells and techniques for their manufacture ...

344

Hybrid Solar Cells via UV-Polymerization of Polymer Precursor  

AVAIL ABLE FOR L ICENSING New fabrication method results in high-performing solar cells The Invention A method to create improved hybrid solar cells through the ...

345

Improved Dye-Sensitized Solar Cell (DSSC) for Higher Energy ...  

solar cells to potentially compete with fossil fuels. Improved Dye-Sensitized Solar Cell (DSSC) for Higher Energy Conversion Efficiency Page 1 of 1 Data Update

346

Biomimetic Dye Molecules for Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Biomimetic Dye Molecules for Solar Cells Print Biomimetic Dye Molecules for Solar Cells Print Pressing energy problems provide opportunities for solid-state physicists and chemists to solve a major challenge: solar cell adoption. Though solar cells can use energy directly from the Sun to produce electricity that can be converted efficiently into other kinds of energy, they are currently too costly to compete with traditional (polluting) energy sources. The most cost-effective solar cells are not high-end, high-efficiency single-crystal devices, but rather low-end cells based on organic molecules or conducting polymers. Vital information for making organic solar cells more competitive for widespread implementation was obtained using near-edge x-ray absorption fine structure (NEXAFS) spectroscopy performed at ALS Beamline 8.0.1. The relevant energy levels of biomimetic dye molecules were mapped out systematically by determining their unoccupied molecular orbitals and their orientation. Organic molecules in dye-sensitized solar cells exhibit great potential to increase the efficiency and reduce the cost of photovoltaic power generation by allowing a wide variety of chemical modifications and combinations with inorganic nanocrystals.

347

Biomimetic Dye Molecules for Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Biomimetic Dye Molecules for Solar Cells Print Biomimetic Dye Molecules for Solar Cells Print Pressing energy problems provide opportunities for solid-state physicists and chemists to solve a major challenge: solar cell adoption. Though solar cells can use energy directly from the Sun to produce electricity that can be converted efficiently into other kinds of energy, they are currently too costly to compete with traditional (polluting) energy sources. The most cost-effective solar cells are not high-end, high-efficiency single-crystal devices, but rather low-end cells based on organic molecules or conducting polymers. Vital information for making organic solar cells more competitive for widespread implementation was obtained using near-edge x-ray absorption fine structure (NEXAFS) spectroscopy performed at ALS Beamline 8.0.1. The relevant energy levels of biomimetic dye molecules were mapped out systematically by determining their unoccupied molecular orbitals and their orientation. Organic molecules in dye-sensitized solar cells exhibit great potential to increase the efficiency and reduce the cost of photovoltaic power generation by allowing a wide variety of chemical modifications and combinations with inorganic nanocrystals.

348

Biomimetic Dye Molecules for Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Biomimetic Dye Molecules for Solar Cells Print Biomimetic Dye Molecules for Solar Cells Print Pressing energy problems provide opportunities for solid-state physicists and chemists to solve a major challenge: solar cell adoption. Though solar cells can use energy directly from the Sun to produce electricity that can be converted efficiently into other kinds of energy, they are currently too costly to compete with traditional (polluting) energy sources. The most cost-effective solar cells are not high-end, high-efficiency single-crystal devices, but rather low-end cells based on organic molecules or conducting polymers. Vital information for making organic solar cells more competitive for widespread implementation was obtained using near-edge x-ray absorption fine structure (NEXAFS) spectroscopy performed at ALS Beamline 8.0.1. The relevant energy levels of biomimetic dye molecules were mapped out systematically by determining their unoccupied molecular orbitals and their orientation. Organic molecules in dye-sensitized solar cells exhibit great potential to increase the efficiency and reduce the cost of photovoltaic power generation by allowing a wide variety of chemical modifications and combinations with inorganic nanocrystals.

349

Biomimetic Dye Molecules for Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Biomimetic Dye Molecules for Solar Cells Print Biomimetic Dye Molecules for Solar Cells Print Pressing energy problems provide opportunities for solid-state physicists and chemists to solve a major challenge: solar cell adoption. Though solar cells can use energy directly from the Sun to produce electricity that can be converted efficiently into other kinds of energy, they are currently too costly to compete with traditional (polluting) energy sources. The most cost-effective solar cells are not high-end, high-efficiency single-crystal devices, but rather low-end cells based on organic molecules or conducting polymers. Vital information for making organic solar cells more competitive for widespread implementation was obtained using near-edge x-ray absorption fine structure (NEXAFS) spectroscopy performed at ALS Beamline 8.0.1. The relevant energy levels of biomimetic dye molecules were mapped out systematically by determining their unoccupied molecular orbitals and their orientation. Organic molecules in dye-sensitized solar cells exhibit great potential to increase the efficiency and reduce the cost of photovoltaic power generation by allowing a wide variety of chemical modifications and combinations with inorganic nanocrystals.

350

Biomimetic Dye Molecules for Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Biomimetic Dye Molecules for Solar Cells Print Biomimetic Dye Molecules for Solar Cells Print Pressing energy problems provide opportunities for solid-state physicists and chemists to solve a major challenge: solar cell adoption. Though solar cells can use energy directly from the Sun to produce electricity that can be converted efficiently into other kinds of energy, they are currently too costly to compete with traditional (polluting) energy sources. The most cost-effective solar cells are not high-end, high-efficiency single-crystal devices, but rather low-end cells based on organic molecules or conducting polymers. Vital information for making organic solar cells more competitive for widespread implementation was obtained using near-edge x-ray absorption fine structure (NEXAFS) spectroscopy performed at ALS Beamline 8.0.1. The relevant energy levels of biomimetic dye molecules were mapped out systematically by determining their unoccupied molecular orbitals and their orientation. Organic molecules in dye-sensitized solar cells exhibit great potential to increase the efficiency and reduce the cost of photovoltaic power generation by allowing a wide variety of chemical modifications and combinations with inorganic nanocrystals.

351

Biomimetic Dye Molecules for Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Biomimetic Dye Molecules for Solar Cells Print Biomimetic Dye Molecules for Solar Cells Print Pressing energy problems provide opportunities for solid-state physicists and chemists to solve a major challenge: solar cell adoption. Though solar cells can use energy directly from the Sun to produce electricity that can be converted efficiently into other kinds of energy, they are currently too costly to compete with traditional (polluting) energy sources. The most cost-effective solar cells are not high-end, high-efficiency single-crystal devices, but rather low-end cells based on organic molecules or conducting polymers. Vital information for making organic solar cells more competitive for widespread implementation was obtained using near-edge x-ray absorption fine structure (NEXAFS) spectroscopy performed at ALS Beamline 8.0.1. The relevant energy levels of biomimetic dye molecules were mapped out systematically by determining their unoccupied molecular orbitals and their orientation. Organic molecules in dye-sensitized solar cells exhibit great potential to increase the efficiency and reduce the cost of photovoltaic power generation by allowing a wide variety of chemical modifications and combinations with inorganic nanocrystals.

352

Potential for PV Solar Cells  

Science Conference Proceedings (OSTI)

Symposium, Energy Conversion Photovoltaic, Concentrating Solar Power, and Thermoelectric. Presentation Title, Columnar p-n Heterostructures Formed by a...

353

Comparison Between Research-Grade SnO2 and Commercial Available SnO2 for Thin-Film CdTe Solar Cell (Poster)  

DOE Green Energy (OSTI)

A comparison between research-grade, tin-oxide (SnO{sub 2}) thin films and those available from commercial sources is performed. The research-grade SnO{sub 2} film is fabricated at NREL by low-pressure metal-organic chemical vapor deposition. The commercial SnO{sub 2} films are Pilkington Tec 8 and Tec 15 fabricated by atmospheric-pressure chemical vapor deposition. Optical, structural, and compositional analyses are performed. From the optical analysis, an estimation of the current losses due to the SnO{sub 2} layer and glass is provided. Our analysis indicates that the optical properties of commercial SnO{sub 2} could be improved for PV usage.

Li, X.; Pankow, J.; To, B.; Gessert, T.

2008-05-01T23:59:59.000Z

354

Tax Credits Give Thin-Film Solar a Big Boost | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSol will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act...

355

Structure of All-Polymer Solar Cells Impedes Efficiency  

NLE Websites -- All DOE Office Websites (Extended Search)

Structure of All-Polymer Solar Cells Impedes Efficiency Print Structure of All-Polymer Solar Cells Impedes Efficiency Print Organic solar cells are made of thin layers of interpenetrating structures from two different conducting organic materials and are increasingly popular because they are both potentially cheaper to make than those currently in use and can be "painted" or printed onto a variety of surfaces, including flexible films made from the same material as most soda bottles. A large community is exploring a number of promising material combinations (polymer/fullerene, polymer/inorganic, all-polymer, and dye-sensitized cells), seeking a deeper understanding of their fundamental structure, operation, and limitations. A team of researchers from North Carolina State University and the UK has now found, through microscopy and resonant scattering and reflectivity studies at ALS Beamlines 6.3.2 and 5.3.2, that the low rate of energy conversion in model all-polymer solar cells is caused by domains that are too large and interfaces that are not sharp enough. This insight will lead to new approaches to all-polymer device technology that will help realize the intrinsic potential of these materials.

356

Structure of All-Polymer Solar Cells Impedes Efficiency  

NLE Websites -- All DOE Office Websites (Extended Search)

Structure of All-Polymer Solar Cells Impedes Efficiency Print Structure of All-Polymer Solar Cells Impedes Efficiency Print Organic solar cells are made of thin layers of interpenetrating structures from two different conducting organic materials and are increasingly popular because they are both potentially cheaper to make than those currently in use and can be "painted" or printed onto a variety of surfaces, including flexible films made from the same material as most soda bottles. A large community is exploring a number of promising material combinations (polymer/fullerene, polymer/inorganic, all-polymer, and dye-sensitized cells), seeking a deeper understanding of their fundamental structure, operation, and limitations. A team of researchers from North Carolina State University and the UK has now found, through microscopy and resonant scattering and reflectivity studies at ALS Beamlines 6.3.2 and 5.3.2, that the low rate of energy conversion in model all-polymer solar cells is caused by domains that are too large and interfaces that are not sharp enough. This insight will lead to new approaches to all-polymer device technology that will help realize the intrinsic potential of these materials.

357

Structure of All-Polymer Solar Cells Impedes Efficiency  

NLE Websites -- All DOE Office Websites (Extended Search)

Structure of All-Polymer Solar Cells Impedes Efficiency Print Structure of All-Polymer Solar Cells Impedes Efficiency Print Organic solar cells are made of thin layers of interpenetrating structures from two different conducting organic materials and are increasingly popular because they are both potentially cheaper to make than those currently in use and can be "painted" or printed onto a variety of surfaces, including flexible films made from the same material as most soda bottles. A large community is exploring a number of promising material combinations (polymer/fullerene, polymer/inorganic, all-polymer, and dye-sensitized cells), seeking a deeper understanding of their fundamental structure, operation, and limitations. A team of researchers from North Carolina State University and the UK has now found, through microscopy and resonant scattering and reflectivity studies at ALS Beamlines 6.3.2 and 5.3.2, that the low rate of energy conversion in model all-polymer solar cells is caused by domains that are too large and interfaces that are not sharp enough. This insight will lead to new approaches to all-polymer device technology that will help realize the intrinsic potential of these materials.

358

Structure of All-Polymer Solar Cells Impedes Efficiency  

NLE Websites -- All DOE Office Websites (Extended Search)

Structure of All-Polymer Solar Cells Impedes Efficiency Print Structure of All-Polymer Solar Cells Impedes Efficiency Print Organic solar cells are made of thin layers of interpenetrating structures from two different conducting organic materials and are increasingly popular because they are both potentially cheaper to make than those currently in use and can be "painted" or printed onto a variety of surfaces, including flexible films made from the same material as most soda bottles. A large community is exploring a number of promising material combinations (polymer/fullerene, polymer/inorganic, all-polymer, and dye-sensitized cells), seeking a deeper understanding of their fundamental structure, operation, and limitations. A team of researchers from North Carolina State University and the UK has now found, through microscopy and resonant scattering and reflectivity studies at ALS Beamlines 6.3.2 and 5.3.2, that the low rate of energy conversion in model all-polymer solar cells is caused by domains that are too large and interfaces that are not sharp enough. This insight will lead to new approaches to all-polymer device technology that will help realize the intrinsic potential of these materials.

359

Structure of All-Polymer Solar Cells Impedes Efficiency  

NLE Websites -- All DOE Office Websites (Extended Search)

Structure of All-Polymer Solar Cells Impedes Efficiency Print Structure of All-Polymer Solar Cells Impedes Efficiency Print Organic solar cells are made of thin layers of interpenetrating structures from two different conducting organic materials and are increasingly popular because they are both potentially cheaper to make than those currently in use and can be "painted" or printed onto a variety of surfaces, including flexible films made from the same material as most soda bottles. A large community is exploring a number of promising material combinations (polymer/fullerene, polymer/inorganic, all-polymer, and dye-sensitized cells), seeking a deeper understanding of their fundamental structure, operation, and limitations. A team of researchers from North Carolina State University and the UK has now found, through microscopy and resonant scattering and reflectivity studies at ALS Beamlines 6.3.2 and 5.3.2, that the low rate of energy conversion in model all-polymer solar cells is caused by domains that are too large and interfaces that are not sharp enough. This insight will lead to new approaches to all-polymer device technology that will help realize the intrinsic potential of these materials.

360

Comparison Between Research-Grade and Commercially Available SnO2 for Thin-Film CdTe Solar Cells: Preprint  

DOE Green Energy (OSTI)

Compared to commercial SnO2 (with similar film thickness and sheet resistance), research-grade SnO2 has higher optical transmittance and higher electron mobility. Based on our study, changing the glass substrate and improving the SnO2 quality could improve the optical properties of commercial SnO2.

Li, X.; Pankow, J.; To, B.; Gessert, T.

2008-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint  

DOE Green Energy (OSTI)

We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

2008-05-01T23:59:59.000Z

362

Improved Electrodes and Electrolytes for Dye-Based Solar Cells  

SciTech Connect

The most important factor in limiting the stability of dye-sensitized solar cells is the use of volatile liquid solvents in the electrolytes, which causes leakage during extended operation especially at elevated temperatures. This, together with the necessary complex sealing of the cells, seriously hampers the industrial-scale manufacturing and commercialization feasibilities of DSSCs. The objective of this program was to bring about a significant improvement in the performance and longevity of dye-based solar cells leading to commercialization. This had been studied in two ways first through development of low volatility solid, gel or liquid electrolytes, second through design and fabrication of TiO2 sculptured thin film electrodes.

Harry R. Allcock; Thomas E. Mallouk; Mark W. Horn

2011-10-26T23:59:59.000Z

363

Heterojunction solar cell with passivated emitter surface  

DOE Patents (OSTI)

A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.

Olson, J.M.; Kurtz, S.R.

1994-05-31T23:59:59.000Z

364

Heterojunction solar cell with passivated emitter surface  

DOE Patents (OSTI)

A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

Olson, Jerry M. (Lakewood, CO); Kurtz, Sarah R. (Golden, CO)

1994-01-01T23:59:59.000Z

365

Process monitoring in solar cell manufacturing  

DOE Green Energy (OSTI)

In this paper, the authors describe a new method that is capable of on-line monitoring of several solar cell process steps such as texturing, AR coatings, and metal contact properties. The measurement technique is rapid and specifically designed for solar cells and wafers. The system implementing this new concept is named ''PV Reflectometer.'' The idea was originally conceived several years ago and the principle of the method has been demonstrated for some simple cases. Recently, this method has been improved to be more suitable for commercial applications. For completeness, the paper first includes a brief review of the process control requirements and the common monitoring methods in solar cell production.

Sopori, B.; Zhang, Y.; Chen, W.

1999-10-26T23:59:59.000Z

366

LQ Energy LDK Solar Q Cells JV | Open Energy Information  

Open Energy Info (EERE)

LQ Energy LDK Solar Q Cells JV Jump to: navigation, search Name LQ Energy (LDK Solar & Q-Cells JV) Place Saxony-Anhalt, Germany Sector Solar Product Germany-based JV between LDK...

367

Indium oxide/n-silicon heterojunction solar cells  

DOE Patents (OSTI)

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1982-12-28T23:59:59.000Z

368

Solar powered unitized regenerative fuel cell system  

Science Conference Proceedings (OSTI)

Solar hydrogen system is a unique power system that can meet the power requirement for the energy future demand, in such a system the hydrogen used to be the energy carrier which can produced through electrolysis by using the power from the PV during ... Keywords: electrolyzer, fuel cell, hydrogen, photovoltaic, regenerative, solar hydrogen system

Salwan S. Dihrab; , Kamaruzzaman Sopian; Nowshad Amin; M. M. Alghoul; Azami Zaharim

2008-02-01T23:59:59.000Z

369

Solar cell with a gallium nitride electrode  

DOE Patents (OSTI)

A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

Pankove, Jacques I. (Princeton, NJ)

1979-01-01T23:59:59.000Z

370

Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell  

DOE Patents (OSTI)

A method of removing the effects of electrical shorts and shunts created during the fabrication process and improving the performance of a solar cell with a thick film cermet electrode opposite to the incident surface by applying a reverse bias voltage of sufficient magnitude to burn out the electrical shorts and shunts but less than the break down voltage of the solar cell.

Nostrand, Gerald E. (Jamesburg, NJ); Hanak, Joseph J. (Lawrenceville, NJ)

1979-01-01T23:59:59.000Z

371

New Thin Film CuGaSe2/Cu(In,Ga)Se2 Bifacial, Tandem Solar Cell with Both Junctions Formed Simultaneously  

Science Conference Proceedings (OSTI)

Thin films of CuGaSe2 and Cu(In,Ga)Se2 were evaporated by the 3-stage process onto opposite sides of a single piece of soda-lime glass, coated bifacially with an n+/-TCO. Junctions were formed simultaneously with each of the p-type absorbers by depositing thin films of n-CdS via chemical bath deposition (CBD) at 60C. The resulting four-terminal device is a non-mechanically stacked, two-junction tandem. The unique growth sequence protects the temperature-sensitive p/n junctions. The initial device (h= 3.7%, Voc= 1.1 V[AM1.5]) suffered from low quantum efficiencies. Initial results are also presented from experiments with variations in growth sequence and back reflectors.

Young, D. L.; Abu-Shama, J.; Noufi, R.; Li, X.; Keane, J.; Gessert, T. A.; Ward, J. S.; Contreas, M.; Symko-Davies, M.; Coutts, T. J.

2002-05-01T23:59:59.000Z

372

Cascade solar cell having conductive interconnects  

SciTech Connect

Direct ohmic contact between the cells in an epitaxially grown cascade solar cell is obtained by means of conductive interconnects formed through grooves etched intermittently in the upper cell. The base of the upper cell is directly connected by the conductive interconnects to the emitter of the bottom cell. The conductive interconnects preferably terminate on a ledge formed in the base of the upper cell.

Borden, Peter G. (Menlo Park, CA); Saxena, Ram R. (Saratoga, CA)

1982-10-26T23:59:59.000Z

373

Organic-Based ("Excitonic") Solar Cells  

Science Conference Proceedings (OSTI)

The existing types of organic-based solar cells, including dye-sensitized solar cells (DSSCs), can be categorized by their photoconversion mechanism as excitonic solar cells, XSCs. Their distinguishing characteristic is that charge generation and separation are simultaneous and this occurs via exciton dissociation at a heterointerface. Electrons are photogenerated on one side of the interface and holes on the other. This results in fundamental differences between XSCs and conventional PV cells. For example, the open circuit photovoltage, Voc, in conventional cells is limited to less than the magnitude of the band bending, bi; however, Voc in XSCs is commonly greater than bi. A general theoretical description is employed to quantify the differences between conventional and excitonic cells. The key difference is the dominant importance, in XSCs, of the photoinduced chemical potential energy gradient, ..delta..hn, whereas ..delta..hn is unimportant, and therefore neglected, in theoretical descriptions of conventional PV cells. Several examples are provided.

Gregg. B.A.

2003-05-01T23:59:59.000Z

374

Process for Fabrication of Efficient Solar Cells - Energy ...  

Ames Laboratory researchers have developed a process for fabrication of solar cells with increased efficiency.

375

High Aspect Ratio Semiconductor Heterojunction Solar Cells  

E-Print Network (OSTI)

High Aspect Ratio Semiconductor Heterojunction Solar Cells Haoting Shen Prof. Redwing's Research and in-situ dopant for Si nanowires Y. Ke, X.J. Weng, J.M. Redwing, C.M. Eichfeld, T.R. Swisher, S

Yener, Aylin

376

Texturization of multicrystalline silicon solar cells  

E-Print Network (OSTI)

A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create ...

Li, Dai-Yin

2010-01-01T23:59:59.000Z

377

Solar Cell Efficiency Tables (Version 39)  

Science Conference Proceedings (OSTI)

Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined, and new entries since July 2011 are reviewed.

Green, M. A.; Emery, K.; Hishikawa, Y.; Warta, W.; Dunlop, E. D.

2012-01-01T23:59:59.000Z

378

Photocharge transport and recombination measurements in amorphous silicon films and solar cells by photoconductive frequency mixing. Annual subcontract report, 15 May 1995--15 May 1996  

DOE Green Energy (OSTI)

Using the photomixing technique, the authors systematically studied the transport properties of intrinsic hydrogenated amorphous silicon (a-Si:H) samples that had hydrogen content ranging from over 10% to less than 1% and which were produced by the hot-wire technique at NREL. They investigated the continuous decay of electron drift mobility in intrinsic a-Si:H on light-soaking and determined the degradation of photoconductivity, lifetime, and drift mobility in these a-Si:H samples while light-soaking. In addition to the decay of the photoconductivity and electron lifetime, continuous decay of the electron drift mobility was found during the light-soaking process, which reveals a new phenomenon associated with the Staebler-Wronski effect. The drift mobility decreased by a factor of 2--4 for 5-hour light-soaking at 4-sun intensity. The authors investigated the effects of deposition conditions on transport properties of intrinsic a-Si:H films and, by using the photomixing technique, they determined the electron drift mobility, lifetime, and the conduction-band Urbach energy of a-Si:H films as a function of substrate temperature. 44 refs.

Braunstein, R.; Dong, S. [California Univ., Los Angeles, CA (United States)

1996-10-01T23:59:59.000Z

379

The Study of Solar Desalination System with Falling Film Evaporation and Its Operation  

Science Conference Proceedings (OSTI)

The seawater desalination system with falling film evaporation was set up, which was driven by solar-wind energy. In addition, the basic principles of system operation were expounded?and the main factors affecting the system performance were discussed. ... Keywords: Seawater desalination, Solar energy, Falling film evaporation

Chen Zhi-li; He Qiang; Zheng Hong-fei; Long Xiang-yu; Wang Wen-biao; Zhuang Chun-long; Yi Qi-zhen

2009-10-01T23:59:59.000Z

380

Cheaper Silicon Found Effective for Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Cheaper Silicon Found Effective for Solar Cells Cheaper Silicon Found Effective for Solar Cells A research team from the University of California at Berkeley, Lawrence Berkeley National Laboratory, Argonne National Laboratory, and Pacific Northwest National Laboratory, using U.S. Department of Energy (DOE) synchrotron light sources, has successfully shown that inexpensive silicon has the potential to be used for photovoltaic (PV) devices, commonly known as solar cells. In a new approach-whose findings were published online in Nature Materials (August 14, 2005)-the researchers used nanodefect engineering to control transition metal contamination in order to produce impurity-rich, performance-enhanced multicrystalline silicon (mc-Si) material. "Solar energy is often touted as the most promising and secure energy

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

CIBS Solar Cell Development Final Scientific/Technical Report  

SciTech Connect

Efforts to fabricate and study a new photovoltaic material, copper indium boron diselenide (CuInxB1-xSe2 or CIBS), were undertaken. Attempts to prepare CIBS using sputtering deposition techniques resulted in segregation of boron from the rest of elements in the material. CIBS nanocrystals were prepared from the reaction of elemental Se with CuCl, InCl3, and boric acid in solution, but the product material quickly decomposed upon heating that was required in attempts to convert the nanocrystals into a thin film. The investigation of the reasons for the lack of CIBS material stability led to new structure-property studies of closely-related photovoltaic systems as well as studies of new solar cell materials and processing methods that could enhance the development of next-generation solar technologies. A detailed compositional study of CuIn1-xAlxSe2 (CIAS, a system closely related to CIBS) revealed a non-linear correlation between crystal lattice size and the Al/(In+Al) ratios with dual-phase formation being observed. A new nanocrystal-to-thin-film processing method was developed for the preparation of CuIn1-xGaxSe2 (CIGS) thin films in which colloidal Se particles are sprayed in contact with CuIn1-xGaxS2 nanoparticles and heated in an argon atmosphere with no other Se source in the system. The process is non-vacuum and does not require toxic gases such as Se vapor or H2Se. Expertise gained from these studies was applied to new research in the preparation of thin-film pyrite FeS2, an attractive earth-abundant candidate material for next-generation photovoltaics. Three methods successfully produced pure pyrite FeS2 films: sulfurization of sputtered Fe films, chemical bath deposition, and sulfurization of Fe2O3 sol-gel precursors. The last method produced pinhole-free films that may be viable for device development. Nickel, platinum, and possibly carbon would appear to serve as good ohmic contact materials. While CdS has a reasonable conduction band energy match to serve as an n-type buffer material in a pyrite FeS2-based solar cell, the less toxic SnS2 is being explored for this purpose.

Exstrom, Christopher L.; Soukup, Rodney J.; Ianno, Natale J.

2011-09-28T23:59:59.000Z

382

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface  

DOE Green Energy (OSTI)

The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

2010-04-30T23:59:59.000Z

383

Nanoparticle Solar Cell Final Technical Report  

DOE Green Energy (OSTI)

The purpose of this work was to demonstrate all-inorganic nanoparticle-based solar cells with photovoltaic performance extending into the near-IR region of the solar spectrum as a pathway towards improving power conversion efficiencies. The field of all-inorganic nanoparticle-based solar cells is very new, with only one literature publication in the prior to our project. Very little is understood regarding how these devices function. Inorganic solar cells with IR performance have previously been fabricated using traditional methods such as physical vapor deposition and sputtering, and solution-processed devices utilizing IR-absorbing organic polymers have been investigated. The solution-based deposition of nanoparticles offers the potential of a low-cost manufacturing process combined with the ability to tune the chemical synthesis and material properties to control the device properties. This work, in collaboration with the Sue Carter research group at the University of California, Santa Cruz, has greatly expanded the knowledge base in this field, exploring multiple material systems and several key areas of device physics including temperature, bandgap and electrode device behavior dependence, material morphological behavior, and the role of buffer layers. One publication has been accepted to Solar Energy Materials and Solar Cells pending minor revision and another two papers are being written now. While device performance in the near-IR did not reach the level anticipated at the beginning of this grant, we did observe one of the highest near-IR efficiencies for a nanoparticle-based solar cell device to date. We also identified several key parameters of importance for improving both near-IR performance and nanoparticle solar cells in general, and demonstrated multiple pathways which showed promise for future commercialization with further research.

Breeze, Alison, J; Sahoo, Yudhisthira; Reddy, Damoder; Sholin, Veronica; Carter, Sue

2008-06-17T23:59:59.000Z

384

Improved Dye-Sensitized Solar Cell (DSSC) for Higher Energy ...  

A University of Colorado research group led by Rich Noble has developed a novel approach to dye-sensitized solar cells that increases solar-to-electrical energy ...

385

Scientists Identify New Quaternary Materials for Solar Cell Absorbers...  

NLE Websites -- All DOE Office Websites (Extended Search)

insight for exploring use of Earth- abundant quaternary semiconductors for large-scale solar cell applications. For large-scale solar electricity generation, it is critical to...

386

Stress and Fracture of Silicon Solar Cells as Revealed by ...  

Science Conference Proceedings (OSTI)

Presentation Title, Stress and Fracture of Silicon Solar Cells as Revealed by ... thinner and thinner silicon in the solar photovoltaic (PV) technologies due to the...

387

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

388

Emerging materials systems for solar cell applications - CU/sub 2-x/Se. Final report, May 1, 1979-April 30, 1980  

DOE Green Energy (OSTI)

The objective of this research program was the investigation of copper selenide (Cu/sub 2-x/Se) films as a promising potential semiconductor material for low cost, mass produced thin film photovoltaic solar cells. Major activities during this program have been the development of the semiconductor film formation process, characterization of the deposited films, calculation of the projected cell performance from theoretical analysis, and the fabrication and testing of simple cell structures. Progress is reported.

Mickelsen, R.A.; Stewart, J.M.; Chen, W.S.

1980-04-01T23:59:59.000Z

389

Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 January 1990--31 December 1990  

DOE Green Energy (OSTI)

This report describes work to develop a highly accurate numerical model for CuInSe{sub 2} and CdTe solar cells. ADEPT (A Device Emulation Program and Toolbox), a one-dimensional semiconductor device simulation code developed at Purdue University, was used as the basis of this model. An additional objective was to use ADEPT to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. The work is being performed in two phases. The first phase involved collecting device performance parameters, cell structure information, and material parameters. This information was used to construct the basic models to simulate CuInSe{sub 2} and CdTe solar cells. This report is a tabulation of information gathered during the first phase of this project on the performance of existing CuInSe{sub 2} and CdTe solar cells, the material properties of CuInSr{sub 2}, CdTe, and CdS, and the optical absorption properties of CuInSe{sub 2}, CdTe, and CdS. The second phase will entail further development and the release of a version of ADEPT tailored to CuInSe{sub 2} and CdTe solar cells that can be run on a personal computer. In addition, ADEPT will be used to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. 110 refs.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., Lafayette, IN (United States)

1992-04-01T23:59:59.000Z

390

NANOCOMPOSITE ENABLED SENSITIZED SOLAR CELL  

E-Print Network (OSTI)

by Dye-Sensitized Photovoltaic cells. Inorganic Chemistry,by Dye-Sensitized Photovoltaic Cells. Inorganic ChemistryThe characteristics of a photovoltaic cell. Generally,

Phuyal, Dibya

2012-01-01T23:59:59.000Z

391

Development of copper sulfide/cadmium sulfide thin-film solar cells. Thirteenth technical progress report, July 1, 1982-September 30, 1982  

DOE Green Energy (OSTI)

During this period we modified the characteristics of a completed cell by laser treatment in order to alter the sensitivity of the heterojunction behavior to the aging effects of oxygen and moisture. Previously we associated the changes in opposing current which affect the open-circuit voltage of the cells during aging with an increased value of the electric field in the space charge region. The present work demonstrates a strong correlation between the short-circuit current behavior and the density of deep donor states which control open-circuit voltage behavior. Practically speaking, the general degradation trends in the short-circuit current and the opposing current behavior, which we observed in control cells earlier, occur after substantial delay in the laser-treated cell. The laser treatment reduced the rate of the degradation effects in question by at least one order of magnitude. Furthermore, during the early stages of aging in wet oxygen, the laser-treated cell performance was enhanced in terms of both short-circuit current and opposing current.

Szedon, J. R.; Krishnaswamy, S. V.; McMullin, P. G.

1983-06-01T23:59:59.000Z

392

NREL Designs Promising New Oxides for Solar Cells (Fact Sheet)  

DOE Green Energy (OSTI)

High-efficiency, thin-film solar cells require electrical contacts with high electrical conductivity, and the top contact must also have high optical transparency. This need is currently met by transparent conducting oxides (TCOs), which conduct electricity but are 90% transparent to visible light. Scientists at the National Renewable Energy Laboratory (NREL) have derived three key design principles for selecting promising materials for TCO contacts. NREL's application of these design principles has resulted in a 10,000-fold improvement in conductivity for one TCO material.

Not Available

2012-04-01T23:59:59.000Z

393

Low Cost, High Efficiency Tandem Silicon Solar Cells and LEDs  

iency solar cells that leverage the well-established design and manufacturing technology of silicon cells while delivering the performance previously achievable only by far more complex and expensive tandem solar cells.

394

AxunTek Solar Energy | Open Energy Information  

Open Energy Info (EERE)

AxunTek Solar Energy Jump to: navigation, search Name AxunTek Solar Energy Place Taiwan Sector Solar Product Taiwan-based CIGS thin film solar cell producer. References AxunTek...

395

Simulation Studies on a Multi-stage Distillation with Slope-Plate Falling Film Evaporation Desalination System Using Solar Energy  

Science Conference Proceedings (OSTI)

An innovative, multi-stage solar distillation with slope-plate falling film system for seawater desalination is investigated. The system consists of a solar heater (flat plate solar collector) and one evaporation-condensation set that is composed of ... Keywords: solar energy, falling film, desalination

Penghui Gao; Guoqing Zhou; Henglin Lv

2009-10-01T23:59:59.000Z

396

Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)  

Science Conference Proceedings (OSTI)

First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

Not Available

2013-08-01T23:59:59.000Z

397

Structure, dynamics and power conversion efficiency correlations in a new low bandgap polymer : PCBM solar cell.  

DOE Green Energy (OSTI)

Molecular packing structures and photoinduced charge separation dynamics have been investigated in a recently developed bulk heterojunction (BHJ) organic photovoltaic (OPV) material based on poly(thienothiophene-benzodithiophene) (PTB1) with a power conversion efficiency (PCE) of >5% in solar cell devices. Grazing incidence X-ray scattering (GIXS) measurements of the PTB1:PCBM ([6,6]-phenyl-C{sub 61}-butyric acid methyl ester) films revealed {pi}-stacked polymer backbone planes oriented parallel to the substrate surface, in contrast to the {pi}-stacked polymer backbone planes oriented perpendicular to the substrate surface in regioregular P3HT [poly(3-hexylthiophene)]:PCBM films. A {approx}1.7 times higher charge mobility in the PTB1:PCBM film relative to that in P3HT:PCBM films is attributed to this difference in stacking orientation. The photoinduced charge separation (CS) rate in the pristine PTB1:PCBM film is more than twice as fast as that in the annealed P3HT:PCBM film. The combination of a small optical gap, fast CS rate, and high carrier mobility in the PTB1:PCBM film contributes to its relatively high PCE in the solar cells. Contrary to P3HT:PCBM solar cells, annealing PTB1:PCBM films reduced the device PCE from 5.24% in the pristine film to 1.92% due to reduced interfacial area between the electron donor and the acceptor. Consequently, quantum yields of exciton generation and charge separation in the annealed film are significantly reduced compared to those in the pristine film.

Guo, J.; Liang, Y.; Szarko, J.; Lee, B.; Son, H. J.; Rolczynski, B. S.; Yu, L.; Chen, L. X.; Univ.of Chicago; Northwestern Univ.

2010-01-21T23:59:59.000Z

398

Optimized Designs and Materials for Nanostructure Based Solar Cells  

E-Print Network (OSTI)

IBSC Tc = 300K Solar Concentration Ratio (suns) Fig. 3.25irradiation and solar cells The irradiance of the sun on thebetween Sun and Earth - is called the solar constant. The

Shao, Qinghui

2009-01-01T23:59:59.000Z

399

Optimized Designs and Materials for Nanostructure Based Solar Cells  

E-Print Network (OSTI)

to lowering the cost of solar power and hence to making itefficiency of solar panels and power to weight ratio inimprove the solar cell power conversion efficiency and it is

Shao, Qinghui

2009-01-01T23:59:59.000Z

400

High-efficiency concentrator silicon solar cells  

DOE Green Energy (OSTI)

This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1990-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Method of restoring degraded solar cells  

DOE Patents (OSTI)

Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200 C for at least 30 minutes restores their efficiency. 2 figs.

Staebler, D.L.

1983-02-01T23:59:59.000Z

402

Liquid cooled, linear focus solar cell receiver  

DOE Patents (OSTI)

Separate structures for electrical insulation and thermal conduction are established within a liquid cooled, linear focus solar cell receiver for use with parabolic or Fresnel optical concentrators. The receiver includes a V-shaped aluminum extrusion having a pair of outer faces each formed with a channel receiving a string of solar cells in thermal contact with the extrusion. Each cell string is attached to a continuous glass cover secured within the channel with spring clips to isolate the string from the external environment. Repair or replacement of solar cells is effected simply by detaching the spring clips to remove the cover/cell assembly without interrupting circulation of coolant fluid through the receiver. The lower surface of the channel in thermal contact with the cells of the string is anodized to establish a suitable standoff voltage capability between the cells and the extrusion. Primary electrical insulation is provided by a dielectric tape disposed between the coolant tube and extrusion. Adjacent solar cells are soldered to interconnect members designed to accommodate thermal expansion and mismatches. The coolant tube is clamped into the extrusion channel with a releasably attachable clamping strip to facilitate easy removal of the receiver from the coolant circuit.

Kirpich, A.S.

1983-12-08T23:59:59.000Z

403

Method of restoring degraded solar cells  

DOE Patents (OSTI)

Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

Staebler, David L. (Lawrenceville, NJ)

1983-01-01T23:59:59.000Z

404

Accurate performance measurement of silicon solar cells  

E-Print Network (OSTI)

of the research is a testing `recipe' that uses low-cost equipment and gives an estimate of measurement is an important part of the solar cell manufacturing process. Two classes of measurement can be considered measurement ­ for cell sorting and process improvement. This work describes techniques that address both

405

Liquid cooled, linear focus solar cell receiver  

DOE Patents (OSTI)

Separate structures for electrical insulation and thermal conduction are established within a liquid cooled, linear focus solar cell receiver for use with parabolic or Fresnel optical concentrators. The receiver includes a V-shaped aluminum extrusion having a pair of outer faces each formed with a channel receiving a string of solar cells in thermal contact with the extrusion. Each cell string is attached to a continuous glass cover secured within the channel with spring clips to isolate the string from the external environment. Repair or replacement of solar cells is effected simply by detaching the spring clips to remove the cover/cell assembly without interrupting circulation of coolant fluid through the receiver. The lower surface of the channel in thermal contact with the cells of the string is anodized to establish a suitable standoff voltage capability between the cells and the extrusion. Primary electrical insulation is provided by a dielectric tape disposed between the coolant tube and extrusion. Adjacent solar cells are soldered to interconnect members designed to accommodate thermal expansion and mismatches. The coolant tube is clamped into the extrusion channel with a releasably attachable clamping strip to facilitate easy removal of the receiver from the coolant circuit.

Kirpich, Aaron S. (Broomall, PA)

1985-01-01T23:59:59.000Z

406

Photovoltaic Polycrystalline Thin-Film Cell Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Polycrystalline Thin-Film Cell Basics Polycrystalline Thin-Film Cell Basics Photovoltaic Polycrystalline Thin-Film Cell Basics August 20, 2013 - 2:36pm Addthis Polycrystalline thin-film cells are made of many tiny crystalline grains of semiconductor materials. The materials used in these cells have properties that are different from those of silicon. Thin-film cells have many advantages over their thick-film counterparts. For example, they use much less material. The cell's active area is usually only 1 to 10 micrometers thick, whereas thick films typically are 100 to 300 micrometers thick. Also, thin-film cells can usually be manufactured in a large-area process, which can be an automated, continuous production process. Finally, they can be deposited on flexible substrate materials. The term thin film comes from the method used to deposit the film, not from

407

Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells. Final subcontract report, 1 January 1991--31 December 1991  

DOE Green Energy (OSTI)

This report describes work to develop an accurate numerical model for CuInSe{sub 2} (CIS) and CdTe-based solar cells capable of running on a personal computer. Such a model will aid researchers in designing and analyzing CIS- and CdTe-based solar cells. ADEPT (A Device Emulation Pregrain and Tool) was used as the basis for this model. An additional objective of this research was to use the models developed to analyze the performance of existing and proposed CIS- and CdTe-based solar cells. The development of accurate numerical models for CIS- and CdTe-based solar cells required the compilation of cell performance data (for use in model verification) and the compilation of measurements of material parameters. The development of the numerical models involved implementing the various physical models appropriate to CIS and CdTe, as well as some common window. A version of the model capable of running on an IBM-comparable personal computer was developed (primary code development is on a SUN workstation). A user-friendly interface with pop-up menus is continuing to be developed for release with the IBM-compatible model.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., Lafayette, IN (United States)

1992-09-01T23:59:59.000Z

408

Photocharge Transport and Recombination Measurements in Amorphous Silicon Films and Solar Cells by Photoconductive Frequency Mixing: Final Subcontract Report: 13 May 1994 - 15 January 1998  

DOE Green Energy (OSTI)

This report describes work performed during this subcontract by the University of California. The photoconductivity, lifetime, and drift mobility of intrinsic hydrogenated amorphous silicon (a-Si:H), hydrogenated amorphous silicon carbide (a-SiC:H), and hydrogenated amorphous silicon germanium (a-SiGe:H) were determined using a photomixing technique in the as prepared and light-soaked states. In addition to the decay of the photoconductivity and electron lifetime, continuous decay of the electron drift mobility was found during the light-soaking process (Staebler-Wronski effect). Experimental data were fitted to a stretched exponential law. Different stretched-exponential parameters for photoconductivity, lifetime, and drift mobility were obtained, which indicates the production of defects with different generation kinetics upon light soaking. The transport properties of intrinsic a-Si:H samples (which were produced by the hot-wire technique at NREL at different substrate temperatures such that the hydrogen content ranged from >10% to <1%), were systematically studied. It was found that with increasing substrate temperature, the lifetime, the drift mobility, and the photoconductivity decreased, but the Urbach energy ({approx} 0.1 eV below the conduction band) increased. These results indicate that for the a-Si:H films with increasing deposition temperature, the density of positively charged, negatively charged, and neutral defects all show a tendency to increase, in agreement with the results observed by other workers employing other measurement techniques. Researchers also found that the drift mobility of these samples increases and the lifetime decreases with increasing electric field, while the mt product is essentially independent of the electric field in the range of 1,000-10,000 V/cm. The electric field dependence of mobility (Dm) /m0/ (DE) in the as-grown or/and annealed states are always larger than that in the light-soaked state. This electric field dependence of mobility can be explained by the existence of long-range potential fluctuations. Photoemission measurements in air were performed on a-Si:H, a-SiC:H, and transparent conducting oxide layers, and revealed inhomogeneities of composition or surface contamination.

Braunstein, R.; Tang, Y.; Dong, S.; Liebe, J.; Sun, G.; Kattwinkel, A. (University of California: Los Angeles, California)

1999-05-04T23:59:59.000Z

409

Hybrid Solar Cells with Prescribed Nanoscale Morphologies Based onHyperbranched Semiconductor Nanocrystals  

SciTech Connect

In recent years, the search to develop large-area solar cells at low cost has led to research on photovoltaic (PV) systems based on nanocomposites containing conjugated polymers. These composite films can be synthesized and processed at lower costs and with greater versatility than the solid state inorganic semiconductors that comprise today's solar cells. However, the best nanocomposite solar cells are based on a complex architecture, consisting of a fine blend of interpenetrating and percolating donor and acceptor materials. Cell performance is strongly dependent on blend morphology, and solution-based fabrication techniques often result in uncontrolled and irreproducible blends, whose composite morphologies are difficult to characterize accurately. Here we incorporate 3-dimensional hyper-branched colloidal semiconductor nanocrystals in solution-processed hybrid organic-inorganic solar cells, yielding reproducible and controlled nanoscale morphology.

Gur, Ilan; Fromer, Neil A.; Chen, Chih-Ping; Kanaras, AntoniosG.; Alivisatos, A. Paul

2006-09-09T23:59:59.000Z

410

Method of fabricating a solar cell array  

DOE Patents (OSTI)

A first set of pre-tabbed solar cells are assembled in a predetermined array with at least part of each tab facing upward, each tab being fixed to a bonding pad on one cell and abutting a bonding pad on an adjacent cell. The cells are held in place with a first vacuum support. The array is then inverted onto a second vacuum support which holds the tabs firmly against the cell pads they abut. The cells are exposed to radiation to melt and reflow the solder pads for bonding the tab portions not already fixed to bonding pads to these pads.

Lazzery, Angelo G. (Oaklyn, NJ); Crouthamel, Marvin S. (Pennsauken, NJ); Coyle, Peter J. (Oaklyn, NJ)

1982-01-01T23:59:59.000Z

411

The Silicon Solar Cell Turns 50  

NLE Websites -- All DOE Office Websites (Extended Search)

Daryl Chapin, Calvin Fuller, and Gerald Daryl Chapin, Calvin Fuller, and Gerald Pearson likely never imagined inventing a solar cell that would revolutionize the photovoltaics industry. There wasn't even a photovoltaics industry to revolu- tionize in 1952. The three scientists were simply trying to solve problems within the Bell tele- phone system. Traditional dry cell batteries, which worked fine in mild climates, degraded too rapidly in the tropics and ceased to work when needed. The company therefore asked its famous research arm-Bell Laboratories-to explore alternative sources of freestand- ing power. Daryl Chapin got the assign- ment. At that time, his job was to test wind machines, thermoelectric gensets, and steam engines. Being a solar energy enthusiast, he suggested that the investi- gation include solar cells. His supervisor

412

Overview and Challenges of Thin Film Solar Electric Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

and Challenges of Thin and Challenges of Thin Film Solar Electric Technologies H.S. Ullal Presented at the World Renewable Energy Congress X and Exhibition 2008 Glasgow, Scotland, United Kingdom July 19-25, 2008 Conference Paper NREL/CP-520-43355 December 2008 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (ASE), a contractor of the US Government under Contract No. DE-AC36-08-GO28308. Accordingly, the US Government and ASE retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any

413

High throughput solar cell ablation system  

SciTech Connect

A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source.

Harley, Gabriel; Pass, Thomas; Cousins, Peter John; Viatella, John

2012-09-11T23:59:59.000Z

414

Solar cell contact formation using laser ablation  

SciTech Connect

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Harley, Gabriel; Smith, David; Cousins, Peter

2012-12-04T23:59:59.000Z

415

Amorphous and Microcrystalline Silicon Solar Cells: Preprint  

DOE Green Energy (OSTI)

We review the progress made by amorphous silicon solar cells, including the emerging technology of solar cells of microcrystalline silicon. The long-term trend in the efficiency of stabilized laboratory cells based on a-Si:H has been a rise of {approx}0.6 % per year. The recent trend in the a-Si,Ge:H cell efficiency alone, measured in the spectral window assigned to the bottom device in a triple-junction cell, has been an increase of {approx}0.16% per year. These improvements have brought within reach the target of 15% efficiency identified by EPRI and DOE for widespread application. Our review leads to an identification of areas of promising research, with emphasis on the fundamental science required to reach the 15% target, and then to move to the next-level efficiency goal.

Wagner, S. (Princeton University); Carlson, D. E. (Solarex); Branz, H. M. (National Renewable Energy Laboratory)

1999-04-01T23:59:59.000Z

416

Tunable Nanocrystalline CZTS for Solar Photovoltaics with No Required Annealing  

Thin-film solar cells are expected to replace the current first generation of solar photovoltaic technology due to their lower manufacturing cost and increased electrical output. Nanocrystal cells, one of the second generation of solar photovoltaics, ...

417

Multi-junction solar cell device  

SciTech Connect

A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

Friedman, Daniel J. (Lakewood, CO); Geisz, John F. (Wheat Ridge, CO)

2007-12-18T23:59:59.000Z

418

Formosun Solar Corp | Open Energy Information  

Open Energy Info (EERE)

Corp. Place Hsinchu County, Taiwan Zip 303-51 Sector Solar Product Thin-film solar cell producer based in Taiwan. References Formosun Solar Corp.1 LinkedIn Connections...

419

Nanowire-Based All-Oxide Solar Cells Benjamin D. Yuhas and Peidong Yang*  

E-Print Network (OSTI)

of this solution were placed onto an indium tin oxide (ITO) coated glass substrate (Thin Film Devices, 40 energy production is fast becoming a vital source of renewable energy being developed as an alternativeNanowire-Based All-Oxide Solar Cells Benjamin D. Yuhas and Peidong Yang* Department of Chemistry

Yang, Peidong

420

Towards an understanding of light activation processes in titanium oxide based inverted organic solar cells  

E-Print Network (OSTI)

, 233903 (2012) Thin-film encapsulation of inverted indium-tin-oxide-free polymer solar cells by atomic structures.2­5 In an inverted PSC, electrons are collected by the indium tin oxide (ITO) bottom electrode of increasing attention around the world for the last 20 years as a potential source of renewable energy. PSC

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

DOI: 10.1002/adma.200702781 Aerogel Templated ZnO Dye-Sensitized Solar Cells**  

E-Print Network (OSTI)

DOI: 10.1002/adma.200702781 Aerogel Templated ZnO Dye-Sensitized Solar Cells** By Thomas W. Hamann silica aerogel films, featuring a large range of controllable thickness and porosity, are prepared as substructure templates. The aerogel templates are coated with ZnO via atomic layer deposition (ALD) to yield

422

Thin Film Solid Oxide Fuel Cells  

Science Conference Proceedings (OSTI)

A novel solid oxide fuel cell (SOFC) design that can be fabricated entirely using low-temperature, thin-film processing is described. Potential advantages of the cell are reduced materials costs and improved fuel-cell characteristics. The critical design feature is the use of thin (approximately equal to 50 nanometers), catalytically-active oxide layers on a < 10 micrometer thick yttria-stabilized zirconia (YSZ) supported electrolyte to minimize reaction overpotentials and ohmic losses. Doped ceria at th...

1995-03-29T23:59:59.000Z

423

Light incoherence theory revisited by Heisenberg time-energy uncertainty challenges solar cell optimization  

E-Print Network (OSTI)

Optimization of the efficiency of solar cells is a major challenge for renewable energies. Using a rigorous theoretical approach, we show that the photocurrent generated in a solar cell depends strongly on the degree of coherence of the incident light. In accordance with Heisenberg uncertainty time-energy, incoherent light at photons of carrier energy lower than the active material bandgap can be absorbed whereas coherent light at the same carrier energy cannot. We identify cases where incoherence does enhance efficiency. This result has a dramatical impact on the way solar cells must be optimized regarding sunlight. As an illustration, surface-corrugated GaAs and c-Si thin-film solar cells are considered.

Herman, Aline; Deparis, Olivier

2013-01-01T23:59:59.000Z

424

Photovoltaic nanocrystal scintillators hybridized on Si solar cells  

E-Print Network (OSTI)

Photovoltaic nanocrystal scintillators hybridized on Si solar cells for enhanced conversion on solar cells to enhance photovoltaic device parameters including spectral responsivity, open circuit@bilkent.edu.tr Abstract: We propose and demonstrate semiconductor nanocrystal based photovoltaic scintillators integrated

Demir, Hilmi Volkan

425

Harmful Shunting Mechanisms Found in Silicon Solar Cells (Fact Sheet)  

DOE Green Energy (OSTI)

Scientists developed near-field optical microscopy for imaging electrical breakdown in solar cells and identified critical electrical breakdown mechanisms operating in industrial silicon and epitaxial silicon solar cells.

Not Available

2011-05-01T23:59:59.000Z

426

Ohmic contacts for solar cells by arc plasma spraying  

DOE Patents (OSTI)

The method of applying ohmic contacts to a semiconductor, such as a silicon body or wafer used in solar cells, by the use of arc plasma spraying, and solar cells resulting therefrom.

Narasimhan, Mandayam C. (Seekonk, MA); Roessler, Barton (Barrington, RI); Loferski, Joseph J. (Providence, RI)

1982-01-01T23:59:59.000Z

427

High temperature investigations of crystalline silicon solar cell materials  

E-Print Network (OSTI)

Crystalline silicon solar cells are a promising candidate to provide a sustainable, clean energy source for the future. In order to bring about widespread adoption of solar cells, much work is needed to reduce their cost. ...

Hudelson, George David Stephen, III

2009-01-01T23:59:59.000Z

428

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1996-01-01T23:59:59.000Z

429

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

Lauf, R.J.

1996-04-02T23:59:59.000Z

430

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

431

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

Lauf, R.J.

1994-04-26T23:59:59.000Z

432

Next Generation Solar Cell Materials and Devices - Programmaster ...  

Science Conference Proceedings (OSTI)

Symposium, Next Generation Solar Cell Materials and Devices. Sponsorship. Organizer(s), Mark S. Goorsky, University of California, Los Angeles

433

Solar Cell Silicon: Production and Recyling - Programmaster.org  

Science Conference Proceedings (OSTI)

About this Symposium. Meeting, 2010 TMS Annual Meeting & Exhibition. Symposium, Solar Cell Silicon: Production and Recyling. Sponsorship, The Minerals...

434

Alloys and Compounds for Thermoelectric and Solar Cell ...  

Science Conference Proceedings (OSTI)

About this Symposium. Meeting, 2014 TMS Annual Meeting & Exhibition. Symposium, Alloys and Compounds for Thermoelectric and Solar Cell Applications II.

435

Solar Cell Technology Opportunities: Looking To a Bright ...  

Science Conference Proceedings (OSTI)

Solar Cell Technology Opportunities: Looking To a Bright, Sunny Future. From NIST Tech Beat: April 26, 2011. ...

2011-04-26T23:59:59.000Z

436

Enhanced light absorption of solar cells and photodetectors by ...  

Enhanced light absorption of solar cells and photodetectors by diffraction is described. Triangular, rectangular, and blazed subwavelength periodic structures are ...

437

Photovoltaic material and device measurements workshop: focus on polycrystalline thin film cells  

DOE Green Energy (OSTI)

The general purpose of the workshop was to accelerate the development of thin film solar cells by improving the versatility and reliability of material and device measurement techniques. Papers were presented under the following sessions: structural/chemical session; optical/electro-optical session; charge transport session; and poster session. Each paper was processed for EDB.

None

1979-01-01T23:59:59.000Z

438

Metal electrode for amorphous silicon solar cells  

DOE Patents (OSTI)

An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

Williams, Richard (Princeton, NJ)

1983-01-01T23:59:59.000Z

439

Tandem junction amorphous silicon solar cells  

DOE Patents (OSTI)

An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

Hanak, Joseph J. (Lawrenceville, NJ)

1981-01-01T23:59:59.000Z

440

Argonne CNM Highlight: Improved Hybrid Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Improved Hybrid Solar Cells Improved Hybrid Solar Cells inorganic-organic hybrid photovoltaic (PV) cells imade of highly ordered titanium dioxide (TiO2) nanotube arrays filled with solid organic hole conductors such as conjugated polymers One approach for making inexpensive inorganic-organic hybrid photovoltaic (PV) cells is to fill highly ordered titanium dioxide (TiO2) nanotube arrays with solid organic hole conductors such as conjugated polymers. Center for Nanoscale Materials researchers and collaborative users from the University of Chicago present a new in situ ultraviolet (UV) polymerization method for growing polythiophene inside TiO2 nanotubes and compare this method to the conventional approach of infiltrating nanotubes with presynthesized polymer. A nanotubular TiO2 substrate is immersed in a 2,5-diiodothiophene (DIT)

Note: This page contains sample records for the topic "film solar cells" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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441

Flexible thermal cycle test equipment for concentrator solar cells  

SciTech Connect

A system and method for performing thermal stress testing of photovoltaic solar cells is presented. The system and method allows rapid testing of photovoltaic solar cells under controllable thermal conditions. The system and method presents a means of rapidly applying thermal stresses to one or more photovoltaic solar cells in a consistent and repeatable manner.

Hebert, Peter H. (Glendale, CA); Brandt, Randolph J. (Palmdale, CA)

2012-06-19T23:59:59.000Z

442

Simulation of dye solar cells: through and beyond one dimension  

Science Conference Proceedings (OSTI)

In this work we present a Computer Aided Design (CAD) software, called TiberCAD, to simulate Dye Sensitized Solar Cells (DSC). DSCs are particularly interesting devices due to their high efficiency (more than 11% on small area and 8% on large area) and ... Keywords: Drift diffusion, Dye sensitized solar cells, Electrochemistry, Finite element methods, Solar cells

Alessio Gagliardi; Matthias Auf Der Maur; Desiree Gentilini; Aldo Carlo

2011-12-01T23:59:59.000Z

443

EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques  

E-Print Network (OSTI)

1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser - Bozeman Screen Printed Solar Cells · Starting wafer is about 0.5 mm thick and 10 x 10 cm2. The wafer is p-type and lightly doped with Boron (1016/cm3) 2 Screen Printed Solar Cells · Saw Damage Etch ­ The starting wafer

Kaiser, Todd J.

444

Method of fabricating a solar cell with a tunnel dielectric layer  

SciTech Connect

Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

Dennis, Tim; Harrington, Scott; Manning, Jane; Smith, David; Waldhauer, Ann

2012-12-18T23:59:59.000Z

445

An Upside-Down Solar Cell Achieves Record Efficiencies (Fact...  

NLE Websites -- All DOE Office Websites (Extended Search)

by the Federal Laboratory Consortium. The cell's inventors pioneered a new class of solar cells with marked advantages in performance, engineering design, operation, and...

446

Solar cells with low cost substrates and process of making same  

SciTech Connect

A solar cell having a substrate and an intermediate recrystallized film and a semiconductor material capable of absorbing light with the substrate being selected from one of a synthetic organic resin, graphite, glass and a crystalline material having a grain size less than about 1 micron.sup.2. The intermediate recrystallized film has a grain size in the range of from about 10 microns.sup.2 to about 10,000 microns.sup.2 and a lattice mismatch with the semiconductor material not greater than about 4%. The semiconductor material has a grain size not less than about 10 microns.sup.2. An anti-reflective layer and electrical contact means are provided. Also disclosed is a subcombination of substrate, intermediate recrystallized film and semiconductor material. Also, methods of formulating the solar cell and subcombination are disclosed.

Mitchell, Kim W. (Indian Hills, CO)

1984-01-01T23:59:59.000Z

447

NREL Researchers Demonstrate External Quantum Efficiency Surpassing 100% in a Quantum Dot Solar Cell (Fact Sheet)  

DOE Green Energy (OSTI)

A new device that produces and collects multiple electrons per photon could yield inexpensive, high-efficiency photovoltaics. A new device developed through research at the National Renewable Energy Laboratory (NREL) reduces conventional losses in photovoltaic (PV) solar cells, potentially increasing the power conversion efficiency-but not the cost-of the solar cells. Solar cells convert optical energy from the sun into usable electricity; however, almost 50% of the incident energy is lost as heat with present-day technologies. High-efficiency, multi-junction cells reduce this heat loss, but their cost is significantly higher. NREL's new device uses excess energy in solar photons to create extra charges rather than heat. This was achieved using 5-nanometer-diameter quantum dots of lead selenide (PbSe) tightly packed into a film. The researchers chemically treated the film, and then fabricated a device that yielded an external quantum efficiency (number of electrons produced per incident photon) exceeding 100%, a value beyond that of all current solar cells for any incident photon. Quantum dots are known to efficiently generate multiple excitons (a bound electron-hole pair) per absorbed high-energy photon, and this device definitively demonstrates the collection of multiple electrons per photon in a PV cell. The internal quantum efficiency corrects for photons that are not absorbed in the photoactive layer and shows that the PbSe film generates 30% to 40% more electrons in the high-energy spectral region than is possible with a conventional solar cell. While the unoptimized overall power conversion efficiency is still low (less than 5%), the results have important implications for PV because such high quantum efficiency can lead to more electrical current produced than possible using present technologies. Furthermore, this fabrication is also amenable to inexpensive, high-throughput roll-to-roll manufacturing.

Not Available

2011-12-01T23:59:59.000Z

448

Application of Single Wall Carbon Nanotubes as Transparent Electrodes in Cu(In,Ga)Se2-Based Solar Cells: Preprint  

DOE Green Energy (OSTI)

We present a new thin-film solar cell structure in which the traditional transparent conductive oxide electrode (ZnO) is replaced by a transparent conductive coating consisting of a network of bundled single-wall carbon nanotubes. Optical transmission properties of these coatings are presented in relation to their electrical properties (sheet resistance), along with preliminary solar cell results from devices made using CuIn1-xGaxSe2 thin-film absorber materials. Achieving an energy conversion efficiency of >12% and a quantum efficiency of {approx}80% demonstrate the feasibility of the concept. A discussion of the device structures will be presented considering the physical properties of the new electrodes comparing current-voltage results from the new solar cell structure and those from standard ZnO/CdS/Cu(In,Ga)Se2/Mo solar cells.

Contreras, M.; Barnes, T.; van de Lagemaat, J.; Rumbles, G.; Coutts, T. J.; Weeks, C.; Glatkowski, P.; Levitsky, I.; Peltola, J.

2006-05-01T23:59:59.000Z

449

Development of Novel Nanocrystal-based Solar Cell to Exploit Multiple Exciton Generation: Cooperative Research and Development Final Report, CRADA Number CRD-07-00227  

Science Conference Proceedings (OSTI)

The purpose of the project was to develop new design and fabrication techniques for NC solar cells with the goal of demonstrating enhanced photocurrent and efficiency by exploiting multiple exciton generation and to investigate multiple exciton generation and charge carrier dynamics in semiconductor NC films used in NC-based solar cells.

Ellingson, R.

2010-08-01T23:59:59.000Z

450

Innotech Solar AS formerly known as Solar Cell Repower | Open Energy  

Open Energy Info (EERE)

Innotech Solar AS formerly known as Solar Cell Repower Innotech Solar AS formerly known as Solar Cell Repower Jump to: navigation, search Name Innotech Solar AS (formerly known as Solar Cell Repower) Place Narvik, Norway Zip 8512 Sector Solar Product Norway-based developer of repowering technologies for solar cells. Coordinates 68.439515°, 17.43015° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":68.439515,"lon":17.43015,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

451

Solar Cells in 2009 and Beyond Mike McGehee  

E-Print Network (OSTI)

Solar Cells in 2009 and Beyond Mike McGehee Materials Science and Engineering These slidesTunesU and Youtube. #12;To provide the world with 10 TW of solar electricity by