National Library of Energy BETA

Sample records for filament hafnium carbide

  1. Silver-hafnium braze alloy

    DOE Patents [OSTI]

    Stephens, Jr., John J.; Hosking, F. Michael; Yost, Frederick G.

    2003-12-16

    A binary allow braze composition has been prepared and used in a bonded article of ceramic-ceramic and ceramic-metal materials. The braze composition comprises greater than approximately 95 wt % silver, greater than approximately 2 wt % hafnium and less than approximately 4.1 wt % hafnium, and less than approximately 0.2 wt % trace elements. The binary braze alloy is used to join a ceramic material to another ceramic material or a ceramic material, such as alumina, quartz, aluminum nitride, silicon nitride, silicon carbide, and mullite, to a metal material, such as iron-based metals, cobalt-based metals, nickel-based metals, molybdenum-based metals, tungsten-based metals, niobium-based metals, and tantalum-based metals. A hermetic bonded article is obtained with a strength greater than 10,000 psi.

  2. Iridium--hafnium alloy

    DOE Patents [OSTI]

    Inouye, H.; Liu, C.T.

    1975-11-11

    A new iridium alloy is described comprised of about 1 weight percent hafnium which greatly improves physical and mechanical properties as compared with pure iridium.

  3. METHOD OF COATING GRAPHITE WITH STABLE METAL CARBIDES AND NITRIDES

    DOE Patents [OSTI]

    Gurinsky, D.H.

    1959-10-27

    A method is presented for forming protective stable nitride and carbide compounds on the surface of graphite. This is accomplished by contacting the graphite surface with a fused heavy liquid metal such as bismuth or leadbismuth containing zirconium, titanium, and hafnium dissolved or finely dispersed therein to form a carbide and nitride of at least one of the dissolved metals on the graphite surface.

  4. SEPARATION OF HAFNIUM FROM ZIRCONIUM

    DOE Patents [OSTI]

    Overholser, L.B.; Barton, C.J. Sr.; Ramsey, J.W.

    1960-05-31

    The separation of hafnium impurities from zirconium can be accomplished by means of organic solvent extraction. The hafnium-containing zirconium feed material is dissolved in an aqueous chloride solution and the resulting solution is contacted with an organic hexone phase, with at least one of the phases containing thiocyanate. The hafnium is extracted into the organic phase while zirconium remains in the aqueous phase. Further recovery of zirconium is effected by stripping the onganic phase with a hydrochloric acid solution and commingling the resulting strip solution with the aqueous feed solution. Hexone is recovered and recycled by means of scrubbing the onganic phase with a sulfuric acid solution to remove the hafnium, and thiocyanate is recovered and recycled by means of neutralizing the effluent streams to obtain ammonium thiocyanate.

  5. Hafnium radioisotope recovery from irradiated tantalum

    DOE Patents [OSTI]

    Taylor, Wayne A.; Jamriska, David J.

    2001-01-01

    Hafnium is recovered from irradiated tantalum by: (a) contacting the irradiated tantalum with at least one acid to obtain a solution of dissolved tantalum; (b) combining an aqueous solution of a calcium compound with the solution of dissolved tantalum to obtain a third combined solution; (c) precipitating hafnium, lanthanide, and insoluble calcium complexes from the third combined solution to obtain a first precipitate; (d) contacting the first precipitate of hafnium, lanthanide and calcium complexes with at least one fluoride ion complexing agent to form a fourth solution; (e) selectively adsorbing lanthanides and calcium from the fourth solution by cationic exchange; (f) separating fluoride ion complexing agent product from hafnium in the fourth solution by adding an aqueous solution of ferric chloride to obtain a second precipitate containing the hafnium and iron; (g) dissolving the second precipitate containing the hafnium and iron in acid to obtain an acid solution of hafnium and iron; (h) selectively adsorbing the iron from the acid solution of hafnium and iron by anionic exchange; (i) drying the ion exchanged hafnium solution to obtain hafnium isotopes. Additionally, if needed to remove residue remaining after the product is dried, dissolution in acid followed by cation exchange, then anion exchange, is performed.

  6. Ferroelectricity in undoped hafnium oxide

    SciTech Connect (OSTI)

    Polakowski, Patrick; Müller, Johannes

    2015-06-08

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P{sub r} of up to 10 μC cm{sup −2} as well as a read/write endurance of 1.6 × 10{sup 5} cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

  7. Formulation and method for preparing gels comprising hydrous hafnium oxide

    DOE Patents [OSTI]

    Collins, Jack L; Hunt, Rodney D; Montgomery, Frederick C

    2013-08-06

    Formulations useful for preparing hydrous hafnium oxide gels contain a metal salt including hafnium, an acid, an organic base, and a complexing agent. Methods for preparing gels containing hydrous hafnium oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including hafnium, an acid, an organic base, and a complexing agent.

  8. Method for preparing metallated filament-wound structures

    DOE Patents [OSTI]

    Peterson, George R.

    1979-01-01

    Metallated graphite filament-wound structures are prepared by coating a continuous multi-filament carbon yarn with a metal carbide, impregnating the carbide coated yarn with a polymerizable carbon precursor, winding the resulting filament about a mandrel, partially curing the impregnation in air, subjecting the wound composite to heat and pressure to cure the carbon precursor, and thereafter heating the composite in a sizing die at a pressure loading of at least 1000 psi for graphitizing the carbonaceous material in the composite. The carbide in the composite coalesces into rod-like shapes which are disposed in an end-to-end relationship parallel with the filaments to provide resistance to erosion in abrasive laden atmospheres.

  9. Carbide and carbonitride surface treatment method for refractory metals

    DOE Patents [OSTI]

    Meyer, G.A.; Schildbach, M.A.

    1996-12-03

    A carbide and carbonitride surface treatment method for refractory metals is provided, in steps including, heating a part formed of boron, chromium, hafnium, molybdenum, niobium, tantalum, titanium, tungsten or zirconium, or alloys thereof, in an evacuated chamber and then introducing reaction gases including nitrogen and hydrogen, either in elemental or water vapor form, which react with a source of elemental carbon to form carbon-containing gaseous reactants which then react with the metal part to form the desired surface layer. Apparatus for practicing the method is also provided, in the form of a carbide and carbonitride surface treatment system including a reaction chamber, a source of elemental carbon, a heating subassembly and a source of reaction gases. Alternative methods of providing the elemental carbon and the reaction gases are provided, as well as methods of supporting the metal part, evacuating the chamber with a vacuum subassembly and heating all of the components to the desired temperature. 5 figs.

  10. Ground-state structures of Hafnium clusters

    SciTech Connect (OSTI)

    Ng, Wei Chun; Yoon, Tiem Leong; Lim, Thong Leng

    2015-04-24

    Hafnium (Hf) is a very large tetra-valence d-block element which is able to form relatively long covalent bond. Researchers are interested to search for substitution to silicon in the semi-conductor industry. We attempt to obtain the ground-state structures of small Hf clusters at both empirical and density-functional theory (DFT) levels. For calculations at the empirical level, charge-optimized many-body functional potential (COMB) is used. The lowest-energy structures are obtained via a novel global-minimum search algorithm known as parallel tempering Monte-Carlo Basin-Hopping and Genetic Algorithm (PTMBHGA). The virtue of using COMB potential for Hf cluster calculation lies in the fact that by including the charge optimization at the valence shells, we can encourage the formation of proper bond hybridization, and thus getting the correct bond order. The obtained structures are further optimized using DFT to ensure a close proximity to the ground-state.

  11. Tunable electrical and optical properties of hafnium nitride thin films

    SciTech Connect (OSTI)

    Farrell, I. L.; Reeves, R. J.; Preston, A. R. H.; Ludbrook, B. M.; Ruck, B. J.; Downes, J. E.; Durbin, S. M.

    2010-02-15

    We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films' reflectance further toward the UV, and we relate this observation to the electronic structure.

  12. Microwave sintering of boron carbide

    DOE Patents [OSTI]

    Blake, R.D.; Katz, J.D.; Petrovic, J.J.; Sheinberg, H.

    1988-06-10

    A method for forming boron carbide into a particular shape and densifying the green boron carbide shape. Boron carbide in powder form is pressed into a green shape and then sintered, using a microwave oven, to obtain a dense boron carbide body. Densities of greater than 95% of theoretical density have been obtained. 1 tab.

  13. Zirconium carbide recrystallization

    SciTech Connect (OSTI)

    Lanin, A.G.; Erin, O.N.; Sul'Yanov, S.N.; Turchin, V.N.

    1986-02-01

    This paper studies the primary recrystallization process of the sintered polycrystalline zirconium carbide with a composition of ZrC /SUB 0.98/ . The properties of zirconium carbide samples deformed under compression are presented; the selected degree of deformation ensures a lower scatter of grain sizes at relative error of +/- 5% in the final deformation measurement. The established mechanisms of structural changes in zirconium carbide during plastic deformation and subsequent high temperature treatment indicate the possibility of using thermomechanical methods for the direct control of the structure of these mechanical methods for the direct control of the structure of these and obviously othe group IV and V carbides obtained by powder metallurgical methods.

  14. Vanadium Carbide Coating Process

    Broader source: Energy.gov [DOE]

    Traditional methods of coating steel surfaces with a layer of hard metal carbide require large capital investment, produce toxic and hazardous gases, are costly to operate, and require multiple...

  15. Carbide and carbonitride surface treatment method for refractory metals

    DOE Patents [OSTI]

    Meyer, Glenn A.; Schildbach, Marcus A.

    1996-01-01

    A carbide and carbonitride surface treatment method for refractory metals is provided, in steps including, heating a part formed of boron, chromium, hafnium, molybdenum, niobium, tantalum, titanium, tungsten or zirconium, or alloys thereof, in an evacuated chamber and then introducing reaction gases including nitrogen and hydrogen, either in elemental or water vapor form, which react with a source of elemental carbon to form carbon-containing gaseous reactants which then react with the metal part to form the desired surface layer. Apparatus for practicing the method is also provided, in the form of a carbide and carbonitride surface treatment system (10) including a reaction chamber (14), a source of elemental carbon (17), a heating subassembly (20) and a source of reaction gases (23). Alternative methods of providing the elemental carbon (17) and the reaction gases (23) are provided, as well as methods of supporting the metal part (12), evacuating the chamber (14) with a vacuum subassembly (18) and heating all of the components to the desired temperature.

  16. PROCESS OF RECOVERING ZIRCONIUM VALUES FROM HAFNIUM VALUES BY SOLVENT EXTRACTION WITH AN ALKYL PHOSPHATE

    DOE Patents [OSTI]

    Peppard, D.F.

    1960-02-01

    A process of separating hafnium nitrate from zirconium nitrate contained in a nitric acid solution by selectively. extracting the zirconium nitrate with a water-immiscible alkyl phosphate is reported.

  17. Method of Preparing Hydrous Hafnium, Cerium, or Aluminum Oxide Gels and

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Spherules - Energy Innovation Portal Advanced Materials Advanced Materials Find More Like This Return to Search Method of Preparing Hydrous Hafnium, Cerium, or Aluminum Oxide Gels and Spherules Oak Ridge National Laboratory Contact ORNL About This Technology Technology Marketing Summary An internal gelatin process for preparing hydrous hafnium, cerium, or aluminum oxide microspheres was invented at ORNL. The invention is a type of sol-gel process that solidifies droplets of solution as they

  18. Aerogel-supported filament

    DOE Patents [OSTI]

    Wuest, C.R.; Tillotson, T.M.; Johnson, C.V. III

    1995-05-16

    The present invention is a thin filament embedded in a low density aerogel for use in radiation detection instruments and incandescent lamps. The aerogel provides a supportive matrix that is thermally and electrically nonconductive, mechanically strong, highly porous, gas-permeable, and transparent to ionizing radiation over short distances. A low density, open-cell aerogel is cast around a fine filament or wire, which allows the wire to be positioned with little or no tension and keeps the wire in place in the event of breakage. The aerogel support reduces the stresses on the wire caused by vibrational, gravitational, electrical, and mechanical forces. 6 Figs.

  19. Aerogel-supported filament

    DOE Patents [OSTI]

    Wuest, Craig R.; Tillotson, Thomas M.; Johnson, III, Coleman V.

    1995-01-01

    The present invention is a thin filament embedded in a low density aerogel for use in radiation detection instruments and incandescent lamps. The aerogel provides a supportive matrix that is thermally and electrically nonconductive, mechanically strong, highly porous, gas-permeable, and transparent to ionizing radiation over short distances. A low density, open-cell aerogel is cast around a fine filament or wire, which allows the wire to be positioned with little or no tension and keeps the wire in place in the event of breakage. The aerogel support reduces the stresses on the wire caused by vibrational, gravitational, electrical, and mechanical forces.

  20. Optically Directed Assembly of Continuous Mesoscale Filaments...

    Office of Scientific and Technical Information (OSTI)

    Publisher's Accepted Manuscript: Optically Directed Assembly of Continuous Mesoscale Filaments Title: Optically Directed Assembly of Continuous Mesoscale Filaments Authors: Bahns, ...

  1. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N.; Lindemer, Terrence B.

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  2. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  3. Reinvestigation of high pressure polymorphism in hafnium metal

    SciTech Connect (OSTI)

    Pandey, K. K. Sharma, Surinder M.; Gyanchandani, Jyoti; Dey, G. K.; Somayazulu, M.; Sikka, S. K.

    2014-06-21

    There has been a recent controversy about the high pressure polymorphism of Hafnium (Hf). Unlike, the earlier known ??? structural transition at 38??8?GPa, at ambient temperature, Hrubiak et al. [J. Appl. Phys. 111, 112612 (2012)] did not observe it till 51?GPa. They observed this transition only at elevated temperatures. We have reinvestigated the room temperature phase diagram of Hf, employing x-ray diffraction (XRD) and DFT based first principles calculations. Experimental investigations have been carried out on several pure and impure Hf samples and also with different pressure transmitting media. Besides demonstrating the significant role of impurity levels on the high pressure phase diagram of Hf, our studies re-establish room temperature ??? transition at high pressures, even in quasi-hydrostatic environment. We observed this transition in pure Hf with equilibrium transition pressure P{sub o}?=?44.5?GPa; however, with large hysteresis. The structural sequence, transition pressures, the lattice parameters, the c/a ratio and its variation with compression for the ? and ? phases as predicted by our ab-initio scalar relativistic (SR) calculations are found to be in good agreement with our experimental results of pure Hf.

  4. Process for microwave sintering boron carbide

    DOE Patents [OSTI]

    Holcombe, C.E.; Morrow, M.S.

    1993-10-12

    A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

  5. Conductivities and Seebeck Coefficients of Boron Carbides:'...

    Office of Scientific and Technical Information (OSTI)

    Coefficients of Boron Carbides: ''Softening-Bipolaron'' Hopping Citation Details In-Document Search Title: Conductivities and Seebeck Coefficients of Boron Carbides: ...

  6. Process for microwave sintering boron carbide

    DOE Patents [OSTI]

    Holcombe, Cressie E.; Morrow, Marvin S.

    1993-01-01

    A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

  7. Steelmaking with iron carbide

    SciTech Connect (OSTI)

    Geiger, G.H.; Stephens, F.A. )

    1993-01-01

    The concept of using iron carbide in steelmaking is not new. Tests were run several decades ago, using carbide made from ore, in steelmaking furnaces. The problem was that at that time, the need for the product was not clear and the economics of production were not favorable. In the early 1970's Frank M. Stephens, Jr., conceived the basis for the present process, and considerable development work has been done during the past decade to bring the carbide production process to its present state, with the first commercial unit now under construction. The process utilizes the following overall reaction to produce Fe[sub 3]C from ore: 3Fe[sub 2]O[sub 3] + 5H[sub 2] + 2 CH[sub 4][equals]2 Fe[sub 3]C + 9 H[sub 2]O. Hydrogen gas from a natural gas reformer is blended with natural gas to form the process gas that is recirculated through the fluid bed reactor, the cooling tower, to remove reaction product water, and back through the reactor again, after reheating. The closed loop nature of the process means that virtually 100% of the process reagents are utilized by the process. The only exception is that a small stream of the process gas is burned as fuel in the reheating step, in order to maintain the level of inerts in the process gas at an acceptable level. The quantity of the bleed stream is entirely dependent on the concentration of inert gases in the fuel supply.

  8. Composition and microstructure of zirconium and hafnium germanates obtained by different chemical routes

    SciTech Connect (OSTI)

    Utkin, A.V. Prokip, V.E.; Baklanova, N.I.

    2014-01-15

    The phase composition and morphology of zirconium and hafnium germanates synthesized by ceramic and co-precipitation routes were studied. The products were characterized using high-temperature X-ray diffraction analysis (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and thermal (TG/DTA) analysis. To investigate the phase composition and stoichiometry of compounds the unit cell parameters were refined by full-profile Rietveld XRD analysis. The morphology of products and its evolution during high-temperature treatment was examined by SEM analysis. It was stated that there is the strong dependence of the phase composition and morphology of products on the preparation route. The ceramic route requires a multi-stage high-temperature treatment to obtain zirconium and hafnium germanates of 95% purity or more. Also, there are strong diffusion limitations to obtain hafnium germanate Hf{sub 3}GeO{sub 8} by ceramic route. On the contrary, the co-precipitation route leads to the formation of nanocrystalline single phase germanates of stoichiometric composition at a relatively low temperatures (less than 1000 C). The results of quantitative XRD analysis showed the hafnium germanates are stoichiometric compounds in contrast to zirconium germanates that form a set of solid solutions. This distinction may be related to the difference in the ion radii of Zr and Hf. - Graphical abstract: The phase composition and morphology of zirconium and hafnium germanates synthesized by ceramic and co-precipitation routes were studied. It was stated that there is the strong dependence of the phase composition and morphology of products on the preparation route. Display Omitted - Highlights: Zr and Hf germanates were synthesized by ceramic and co-precipitation routes. The morphology of products depends on the synthesis parameters. Zirconium germanates forms a set of solid solutions. Hafnium germanates are stoichiometric compounds.

  9. Silicon Carbide JFET Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5kV Enhancement-Model Silicon Carbide JFET Switch The novel 6.5kV SiC device and power module represent the world's highest-voltage module based on reliable, normally-off SiC JFETs. It reduces switching losses over that of Si-IGBTs by a factor of 20 and exhibits the fastest turn- on and turn-off of any 6.5kV-rated power module. Another major aspect of what makes this product unique is USCi's development and manufacturing approach. JFETs are simple transistor switches, yet for SiC materials, a

  10. Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

    SciTech Connect (OSTI)

    Das, K. C.; Ghosh, S. P.; Tripathy, N.; Kar, J. P.; Bose, G.; Lee, T.; Myoung, J. M.

    2015-06-24

    In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 °C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

  11. Methods of producing continuous boron carbide fibers

    SciTech Connect (OSTI)

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  12. Optically Directed Assembly of Continuous Mesoscale Filaments...

    Office of Scientific and Technical Information (OSTI)

    Optically Directed Assembly of Continuous Mesoscale Filaments Citation Details In-Document Search Title: Optically Directed Assembly of Continuous Mesoscale Filaments Authors: ...

  13. A look back at Union Carbides [first] 20 Years in Nuclear Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    first 20 Years in Nuclear Energy The Gaseous Diffusion Plants Note: Union Carbide Nuclear Division, which started out as Carbide and Carbon Chemicals Company, operated the...

  14. Electron emitting filaments for electron discharge devices

    DOE Patents [OSTI]

    Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

    1983-06-10

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600/sup 0/C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for nonuniform current distribution along the filament due to the emission of electrons from the filament.

  15. Electron emitting filaments for electron discharge devices

    DOE Patents [OSTI]

    Leung, Ka-Ngo; Pincosy, Philip A.; Ehlers, Kenneth W.

    1988-01-01

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600.degree. C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for non-uniform current distribution along the filament due to the emission of electrons from the filament.

  16. Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

    SciTech Connect (OSTI)

    Starschich, S.; Griesche, D.; Schneller, T.; Böttger, U.; Waser, R.

    2014-05-19

    Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 μC/cm{sup 2}. The samples were prepared with 5.2 mol. % yttrium-doping and the thickness varied from 18 nm to 70 nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO{sub 2}.

  17. Hafnium nitride buffer layers for growth of GaN on silicon

    DOE Patents [OSTI]

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  18. On the phase formation of sputtered hafnium oxide and oxynitride films

    SciTech Connect (OSTI)

    Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.

    2010-07-15

    Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O{sub 2}-N{sub 2} atmosphere. It is shown that the presence of N{sub 2} allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O{sub 2} partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O{sup -} ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O{sup -} ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O{sup -} ion flux without N{sub 2} addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO{sub 2} is independent from the O{sup -} bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO{sub 2} crystal structure at the expense of the monoclinic HfO{sub 2} one.

  19. Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.

    SciTech Connect (OSTI)

    Petrosky, J. C.; McClory, J. W.; Bielejec, Edward Salvador; Foster, J. C.

    2010-10-01

    Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.

  20. METHOD OF MAKING TUNGSTEN FILAMENTS

    DOE Patents [OSTI]

    Frazer, J.W.

    1962-12-18

    A method of making tungsten filaments is described in which the tungsten is completely free of isotope impurities in the range of masses 234 to 245 for use in mass spectrometers. The filament comprises a tantalum core generally less than 1 mil in diameter having a coating of potassium-free tantalum-diffused tungsten molecularly bonded thereto. In the preferred process of manufacture a short, thin tantalum filament is first mounted between terminal posts mounted in insulated relation through a backing plate. The tungsten is most conveniently vapor plated onto the tantalum by a tungsten carbonyl vapor decomposition method having a critical step because of the tendency of the tantalum to volatilize at the temperature of operntion of the filament. The preferred recipe comprises volatilizing tantalum by resistance henting until the current drops by about 40%, cutting the voltage back to build up the tungsten, and then gradually building the temperature back up to balance the rate of tungsten deposition with the rate of tantalum volatilization. (AEC)

  1. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=58 GPa, T=1400K2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  2. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  3. Determination of Ideal Broth Formulations Needed to Prepare Hydrous Hafnium Oxide Microspheres via the Internal Gelation Process

    SciTech Connect (OSTI)

    Collins, Jack Lee; Hunt, Rodney Dale; Simmerman, S. G.

    2009-02-01

    A simple test-tube methodology was used to determine optimum process parameters for preparing hydrous hafnium oxide microspheres by the internal gelation process. Broth formulations of hafnyl chloride [HfOCl{sub 2}], hexamethylenetetramine, and urea were found that can be used to prepare hydrous hafnium oxide gel spheres in the temperature range of 70-90 C. A few gel-forming runs were made in which microspheres were prepared with some of these formulations in order to equate the test-tube gelation times with actual gelation times. These preparations confirmed that the test-tube methodology is reliable for determining the ideal broths.

  4. Abrasive slurry composition for machining boron carbide

    DOE Patents [OSTI]

    Duran, E.L.

    1984-11-29

    An abrasive slurry particularly suited for use in drilling or machining boron carbide consists essentially of a suspension of boron carbide and/or silicon carbide grit in a carrier solution consisting essentially of a dilute solution of alkylaryl polyether alcohol in octyl alcohol. The alkylaryl polyether alcohol functions as a wetting agent which improves the capacity of the octyl alcohol for carrying the grit in suspension, yet without substantially increasing the viscosity of the carrier solution.

  5. Abrasive slurry composition for machining boron carbide

    DOE Patents [OSTI]

    Duran, Edward L.

    1985-01-01

    An abrasive slurry particularly suited for use in drilling or machining boron carbide consists essentially of a suspension of boron carbide and/or silicon carbide grit in a carrier solution consisting essentially of a dilute solution of alkylaryl polyether alcohol in octyl alcohol. The alkylaryl polyether alcohol functions as a wetting agent which improves the capacity of the octyl alcohol for carrying the grit in suspension, yet without substantially increasing the viscosity of the carrier solution.

  6. Shock-wave strength properties of boron carbide and silicon carbide

    SciTech Connect (OSTI)

    Grady, D.E.

    1994-02-01

    Time-resolved velocity interferometry measurements have been made on boron carbide and silicon carbide ceramics to assess dynamic equation-of-state and strength properties of these materials. Hugoniot pecursor characteristics, and post-yield shock and release wave properties, indicated markedly different dynamic strength and flow behavior for the two carbides.

  7. Conductivities and Seebeck Coefficients of Boron Carbides:'...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 36 MATERIALS SCIENCE; BORON CARBIDES; STABILIZATION; THERMAL CONDUCTIVITY; SEEBECK EFFECT Word Cloud More Like This ...

  8. Methods for producing silicon carbide fibers

    DOE Patents [OSTI]

    Garnier, John E.; Griffith, George W.

    2016-03-01

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  9. Method for making boron carbide cermets

    DOE Patents [OSTI]

    Cline, Carl F.; Fulton, Fred J.

    1987-01-01

    A method for synthesizing low density cermets of boron carbide and a metal binder, using decomposition of a metallic compound at controlled temperature and pressure.

  10. Silicon carbide fibers and articles including same

    SciTech Connect (OSTI)

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  11. PARTIAL SLINGSHOT RECONNECTION BETWEEN TWO FILAMENTS

    SciTech Connect (OSTI)

    Jiang, Yunchun; Hong, Junchao; Yang, Jiayan; Bi, Yi; Zheng, Ruisheng; Yang, Bo; Li, Haidong; Yang, Dan

    2013-02-10

    We present a rare observation of an interaction between two filaments around AR 11358 and AR 11361 on 2011 December 3 that is strongly suggestive of the occurrence of slingshot reconnection. A small elbow-shaped active-region filament (F12) underwent a failed eruption that brought it into contact with a nearby larger, thicker filament (F34). Accompanied by the appearance of complicated internal structures below the erupting F12, its two legs separated away from each other and then connected into F34. This process led the filaments to change their connectivity to form two newly linked filaments, and one of them showed a clear inverse {gamma}-shape. However, the alteration in the filament connectivity was imperfect since F34 is discernible after the eruption. These observations can be interpreted as a partial slingshot reconnection between two filaments that had unequal axial magnetic flux.

  12. Carbon p electron ferromagnetism in silicon carbide (Journal...

    Office of Scientific and Technical Information (OSTI)

    Carbon p electron ferromagnetism in silicon carbide Prev Next Title: Carbon p electron ferromagnetism in silicon carbide You are accessing a document from the Department ...

  13. Bipolaron Hopping Conduction in Boron Carbides (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Bipolaron Hopping Conduction in Boron Carbides Citation Details In-Document Search Title: Bipolaron Hopping Conduction in Boron Carbides You are accessing a document from the ...

  14. Bipolaron Hopping Conduction in Boron Carbides (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Bipolaron Hopping Conduction in Boron Carbides Citation Details In-Document Search Title: Bipolaron Hopping Conduction in Boron Carbides The electrical conductivities of boron ...

  15. Diagnosis of femtosecond plasma filament by channeling microwaves along the filament

    SciTech Connect (OSTI)

    Alshershby, Mostafa; Ren, Yu; Qin, Jiang; Hao, Zuoqiang; Lin, Jingquan

    2013-05-20

    We introduce a simple, fast, and non-intrusive experimental method to obtain the basic parameters of femtosecond laser-generated plasma filament. The method is based on the channeling of microwaves along both a plasma filament and a well-defined conducting wire. By comparing the detected microwaves that propagate along the plasma filament and a copper wire with known conductivity and spatial dimension, the basic parameters of the plasma filament can be easily obtained. As a result of the possibility of channeling microwave radiation along the plasma filament, we were then able to obtain the plasma density distribution along the filament length.

  16. Silicon nitride/silicon carbide composite powders

    DOE Patents [OSTI]

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  17. Titanium carbide bipolar plate for electrochemical devices

    DOE Patents [OSTI]

    LaConti, Anthony B.; Griffith, Arthur E.; Cropley, Cecelia C.; Kosek, John A.

    2000-07-04

    A corrosion resistant, electrically conductive, non-porous bipolar plate is made from titanium carbide for use in an eletrochemical device. The process involves blending titanium carbide powder with a suitable binder material, and molding the mixture, at an elevated temperature and pressure.

  18. Preparation of silicon carbide fibers

    DOE Patents [OSTI]

    Wei, G.C.

    1983-10-12

    Silicon carbide fibers suitable for use in the fabrication of dense, high-strength, high-toughness SiC composites or as thermal insulating materials in oxidizing environments are fabricated by a new, simplified method wherein a mixture of short-length rayon fibers and colloidal silica is homogenized in a water slurry. Water is removed from the mixture by drying in air at 120/sup 0/C and the fibers are carbonized by (pyrolysis) heating the mixture to 800 to 1000/sup 0/C in argon. The mixture is subsequently reacted at 1550 to 1900/sup 0/C in argon to yield pure ..beta..-SiC fibers.

  19. The production of iron carbide

    SciTech Connect (OSTI)

    Anderson, K.M.; Scheel, J.

    1997-12-31

    From start-up in 1994 to present, Nucor`s Iron Carbide plant has overcome many obstacles in achieving design production. Many of these impediments were due to flaws in equipment design. With the integration existing within the plant, limitations in any one system reduced the operating capacity of others. For this reason, as modifications were made and system capacities were increased, the need for additional modifications became apparent. Subsequently, operating practices, maintenance scheduling, employee incentives, and production objectives were continually adapted. This paper discusses equipment and design corrections and the quality issues that contributed to achieving the plant`s production capacity.

  20. Optically Directed Assembly of Continuous Mesoscale Filaments...

    Office of Scientific and Technical Information (OSTI)

    Optically Directed Assembly of Continuous Mesoscale Filaments Bahns, J. T.; Sankaranarayanan, S. K. R. S.; Gray, S. K.; Chen, L. Not Available American Physical Society None USDOE...

  1. Measurement of birefringence inside a filament

    SciTech Connect (OSTI)

    Yuan Shuai; Wang, Tie-Jun; Chin, See Leang; Kosareva, Olga; Panov, Nikolay; Makarov, Vladimir; Zeng Heping

    2011-07-15

    We quantified the ultrafast birefringence induced in the filament in an atomic gas by measuring the filament-induced polarization rotation of a probe pulse. Based on the dephasing of the probe's orthogonal polarization components in argon, the experiment was done at 1 atm by copropagating a linearly polarized 400-nm probe pulse with an 800-nm pump pulse which generated the filament. The probe's elliptical polarization states were shown under various initial pump-probe polarization schemes. These states were verified by comparing the filament-induced probe polarization rotation angle and the ellipticity of the probe polarization.

  2. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

    SciTech Connect (OSTI)

    Zhou, Dayu, E-mail: zhoudayu@dlut.edu.cn [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China) [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Xu, Jin [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023 (China)] [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023 (China); Li, Qing; Guan, Yan [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China)] [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Cao, Fei; Dong, Xianlin [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)] [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Mller, Johannes [Fraunhofer IPMS-CNT, Koengisbruecker Strasse 180, 01109 Dresden (Germany)] [Fraunhofer IPMS-CNT, Koengisbruecker Strasse 180, 01109 Dresden (Germany); Schenk, Tony; Schrder, Uwe [Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden (Germany)] [Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden (Germany)

    2013-11-04

    Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO{sub 2} film under bipolar pulsed-field operation. High field cycling causes a wake-up in virgin pinched polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up.

  3. Density and surface tension of melts of zirconium and hafnium fluorides with lithium fluoride

    SciTech Connect (OSTI)

    Katyshev, S.F.; Artemov, V.V.; Desyatnik, V.N.

    1988-06-01

    A study was conducted to determine the temperature dependence of the density and surface tension of melts of LiF-ZrF/sub 4/ and LiF-HfF/sub 4/. Density and surface tension were determined by the method of maximum pressure in an argon bubble. On the basis of experimental data over the entire concentration range the molar volumes and their relative deviations from the additive molar volumes were calculated for 1100/sup 0/K. The positive deviations of the molar volumes from additivity in the LiF-HfF/sub 4/ system (22.45%) were greater than in the LiF-ZrF/sub 4/ system (15.75%). This indicated that the reaction with lithium fluoride is intensified with the switch to the hafnium fluoride. Results also demonstrated that the fluorides are surface-active components in the molten mixtures.

  4. Growth of filaments and saturation of the filamentation instability

    SciTech Connect (OSTI)

    Gedalin, M.; Medvedev, M.; Spitkovsky, A.; Krasnoselskikh, V.; Vaivads, A.; Perri, S.

    2010-03-15

    The filamentation instability of counterstreaming beams is a nonresonant hydrodynamic-type instability whose growth rate is a smooth function of the wavelength (scale). As a result, perturbations with all unstable wavelengths develop, and the growth saturates due to the saturation of available current. For a given scale, the magnetic field at saturation is proportional to the scale. As a result, the instability develops in a nearly linear regime, where the unstable modes stop growing as soon as the saturation of the corresponding wavelength is reached. At each moment there exists a dominant scale of the magnetic field which is the scale that reached saturation at this particular time. The smaller scales do not disappear and can be easily distinguished in the current structure. The overall growth of the instability stops when the loss of the streaming ion energy because of deceleration is comparable to the initial ion energy.

  5. LIQUID PHASE SINTERING OF METALLIC CARBIDES

    DOE Patents [OSTI]

    Hammond, J.; Sease, J.D.

    1964-01-21

    An improved method is given for fabricating uranium carbide composites, The method comprises forming a homogeneous mixture of powdered uranium carbide, a uranium intermetallic compound which wets and forms a eutectic with said carbide and has a non-uranium component which has a relatively high vapor pressure at a temperature in the range 1200 to 1500 deg C, and an organic binder, pressing said mixture to a composite of desired green strength, and then vacuum sintering said composite at the eutectic forming temperature for a period sufficient to remove at least a portion of the non-uranium containing component of said eutectic. (AEC)

  6. Manufacture of silicon carbide using solar energy

    DOE Patents [OSTI]

    Glatzmaier, Gregory C. (Boulder, CO)

    1992-01-01

    A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  7. A look back at Union Carbides FIRST 20 Years in Nuclear Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Union Carbide in Nuclear Energy Note: Union Carbide Nuclear Division, which started out as Carbide and Carbon Chemicals Company, operated the Atomic Energy CommissionEnergy ...

  8. A look back at Union Carbides first 20 Years in Nuclear Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    from Manhattan District. "March, 1948 - Carbide accepted operating contract, and name was changed to Oak Ridge National Laboratory. "1948 - Construction started on...

  9. Union Carbides Last 20 Years in Oak Ridge ? part 3

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    national news event that captured Carbide's top management attention was the Three Mile Island, Pennsylvania nuclear accident. ORNL responded quickly, sending experts to help....

  10. Method for preparing boron-carbide articles

    DOE Patents [OSTI]

    Benton, S.T.; Masters, D.R.

    1975-10-21

    The invention is directed to the preparation of boron carbide articles of various configurations. A stoichiometric mixture of particulate boron and carbon is confined in a suitable mold, heated to a temperature in the range of about 1250 to 1500$sup 0$C for effecting a solid state diffusion reaction between the boron and carbon for forming the boron carbide (B$sub 4$C), and thereafter the resulting boron-carbide particles are hot-pressed at a temperature in the range of about 1800 to 2200$sup 0$C and a pressure in the range of about 1000 to 4000 psi for densifying and sintering the boron carbide into the desired article.

  11. Selective etching of silicon carbide films

    DOE Patents [OSTI]

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  12. Fabrication of thorium bearing carbide fuels

    DOE Patents [OSTI]

    Gutierrez, R.L.; Herbst, R.J.; Johnson, K.W.R.

    Thorium-uranium carbide and thorium-plutonium carbide fuel pellets have been fabricated by the carbothermic reduction process. Temperatures of 1750/sup 0/C and 2000/sup 0/C were used during the reduction cycle. Sintering temperatures of 1800/sup 0/C and 2000/sup 0/C were used to prepare fuel pellet densities of 87% and > 94% of theoretical, respectively. The process allows the fabrication of kilogram quantities of fuel with good reproductibility of chemical and phase composition.

  13. Filamentous Carbon Particles for Cleaning Oil Spills - Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Return to Search Filamentous Carbon Particles for Cleaning Oil Spills DOE Grant Recipients ... methods and apparatus for the creation of carbon filaments used for cleaning oil spills. ...

  14. Unwinding motion of a twisted active region filament

    SciTech Connect (OSTI)

    Yan, X. L.; Xue, Z. K.; Kong, D. F.; Liu, J. H.; Xu, C. L.

    2014-12-10

    To better understand the structures of active region filaments and the eruption process, we study an active region filament eruption in active region NOAA 11082 in detail on 2010 June 22. Before the filament eruption, the opposite unidirectional material flows appeared in succession along the spine of the filament. The rising of the filament triggered two B-class flares at the upper part of the filament. As the bright material was injected into the filament from the sites of the flares, the filament exhibited a rapid uplift accompanying the counterclockwise rotation of the filament body. From the expansion of the filament, we can see that the filament consisted of twisted magnetic field lines. The total twist of the filament is at least 5? obtained by using a time slice method. According to the morphology change during the filament eruption, it is found that the active region filament was a twisted flux rope and its unwinding motion was like a solar tornado. We also find that there was a continuous magnetic helicity injection before and during the filament eruption. It is confirmed that magnetic helicity can be transferred from the photosphere to the filament. Using the extrapolated potential fields, the average decay index of the background magnetic fields over the filament is 0.91. Consequently, these findings imply that the mechanism of solar filament eruption could be due to the kink instability and magnetic helicity accumulation.

  15. Detection and characterization of multi-filament evolution during...

    Office of Scientific and Technical Information (OSTI)

    of multi-filament evolution during resistive switching. Citation Details In-Document Search Title: Detection and characterization of multi-filament evolution during resistive ...

  16. Laser-Induced Ionization Efficiency Enhancement On A Filament For Thermal Ionization Mass Spectrometry

    SciTech Connect (OSTI)

    Siegfried, M.

    2015-10-14

    The evaluation of trace Uranium and Plutonium isotope ratios for nanogram to femtogram material quantities is a vital tool for nuclear counter-proliferation and safeguard activities. Thermal Ionization Mass Spectrometry (TIMS) is generally accepted as the state of the art technology for highly accurate and ultra-trace measurements of these actinide ratios. However, the very low TIMS ionization yield (typically less than 1%) leaves much room for improvement. Enhanced ionization of Nd and Sm from a TIMS filament was demonstrated using wavelength resonance with a nanosecond (pulse width) laser operating at 10 Hz when light was directed toward the filament.1 For this study, femtosecond and picosecond laser capabilities were to be employed to study the dissociation and ionization mechanisms of actinides/lanthanides and measure the enhanced ionization of the metal of interest. Since the underlying chemistry of the actinide/lanthanide carbides produced and dissociated on a TIMS filament is not well understood, the experimental parameters affecting the photodissociation and photoionization with one and two laser beams were to be investigated.

  17. THERMAL AND CHEMICAL EVOLUTION OF COLLAPSING FILAMENTS

    SciTech Connect (OSTI)

    Gray, William J.; Scannapieco, Evan

    2013-05-10

    Intergalactic filaments form the foundation of the cosmic web that connect galaxies together, and provide an important reservoir of gas for galaxy growth and accretion. Here we present very high resolution two-dimensional simulations of the thermal and chemical evolution of such filaments, making use of a 32 species chemistry network that tracks the evolution of key molecules formed from hydrogen, oxygen, and carbon. We study the evolution of filaments over a wide range of parameters including the initial density, initial temperature, strength of the dissociating UV background, and metallicity. In low-redshift, Z Almost-Equal-To 0.1 Z{sub Sun} filaments, the evolution is determined completely by the initial cooling time. If this is sufficiently short, the center of the filament always collapses to form a dense, cold core containing a substantial fraction of molecules. In high-redshift, Z = 10{sup -3} Z{sub Sun} filaments, the collapse proceeds much more slowly. This is mostly due to the lower initial temperatures, which lead to a much more modest increase in density before the atomic cooling limit is reached, making subsequent molecular cooling much less efficient. Finally, we study how the gravitational potential from a nearby dwarf galaxy affects the collapse of the filament and compare this to NGC 5253, a nearby starbursting dwarf galaxy thought to be fueled by the accretion of filament gas. In contrast to our fiducial case, a substantial density peak forms at the center of the potential. This peak evolves faster than the rest of the filament due to the increased rate at which chemical species form and cooling occurs. We find that we achieve similar accretion rates as NGC 5253 but our two-dimensional simulations do not recover the formation of the giant molecular clouds that are seen in radio observations.

  18. Filaments in simulations of molecular cloud formation

    SciTech Connect (OSTI)

    Gmez, Gilberto C.; Vzquez-Semadeni, Enrique

    2014-08-20

    We report on the filaments that develop self-consistently in a new numerical simulation of cloud formation by colliding flows. As in previous studies, the forming cloud begins to undergo gravitational collapse because it rapidly acquires a mass much larger than the average Jeans mass. Thus, the collapse soon becomes nearly pressureless, proceeding along its shortest dimension first. This naturally produces filaments in the cloud and clumps within the filaments. The filaments are not in equilibrium at any time, but instead are long-lived flow features through which the gas flows from the cloud to the clumps. The filaments are long-lived because they accrete from their environment while simultaneously accreting onto the clumps within them; they are essentially the locus where the flow changes from accreting in two dimensions to accreting in one dimension. Moreover, the clumps also exhibit a hierarchical nature: the gas in a filament flows onto a main, central clump but other, smaller-scale clumps form along the infalling gas. Correspondingly, the velocity along the filament exhibits a hierarchy of jumps at the locations of the clumps. Two prominent filaments in the simulation have lengths ?15 pc and masses ?600 M {sub ?} above density n ? 10{sup 3} cm{sup 3} (?2 10{sup 3} M {sub ?} at n > 50 cm{sup 3}). The density profile exhibits a central flattened core of size ?0.3 pc and an envelope that decays as r {sup 2.5} in reasonable agreement with observations. Accretion onto the filament reaches a maximum linear density rate of ?30 M {sub ?} Myr{sup 1} pc{sup 1}.

  19. Method of enhanced lithiation of doped silicon carbide via high...

    Office of Scientific and Technical Information (OSTI)

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also ...

  20. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test themore » quality of the HfO2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO2 thin film functioned very well as the gate oxide.« less

  1. Investigation of crystallization processes from hafnium silicate powders prepared from an oxychloride sol-gel

    SciTech Connect (OSTI)

    McGilvery, Catriona M.; De Gendt, S; Payzant, E Andrew; Craven, A J; MacKenzie, M; McComb, D W

    2012-01-01

    Hafnium oxide and silicate materials are now incorporated into working CMOS devices, however the crystallisation mechanism is still poorly understood. In particular, addition of SiO2 to HfO2 has been shown to increase the crystallisation temperature of HfO2 hence allowing it to remain amorphous under current processing conditions. Building on earlier work we here investigate bulk HfxSi1-xO2 samples to determine the effect of SiO2 on the crystallisation pathway. Techniques such as XRD, HTXRD, thermal analysis techniques and TEM are used. It is found that the addition of SiO2 has very little affect on the crystallisation path at temperatures below 900 C but at higher temperatures a second t-HfO2 phase nucleates and is stabilised due to the strain of the surrounding amorphous SiO2 material. With an increase in SiO2 content the temperature at which this nucleation and stabilisation occurs is increased. The effect of strain has implications for inhibiting the crystallisation of the high-k layer, reduction of grain boundaries and hence diffusion, reduction of formation of interface layers and the possibility of stabilising t-HfO2 rather than m-HfO2 hence increasing the dielectric of the layer.

  2. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    SciTech Connect (OSTI)

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test the quality of the HfO2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO2 thin film functioned very well as the gate oxide.

  3. Tailoring the index of refraction of nanocrystalline hafnium oxide thin films

    SciTech Connect (OSTI)

    Vargas, Mirella; Murphy, N. R.; Ramana, C. V.

    2014-03-10

    Hafnium oxide (HfO{sub 2}) films were grown by sputter-deposition by varying the growth temperature (T{sub s} = 25–700 °C). HfO{sub 2} films grown at T{sub s} < 200 °C were amorphous, while those grown at T{sub s} ≥ 200 °C were monoclinic, nanocrystalline with (1{sup ¯}11) texturing. X-ray reflectivity (XRR) analyses indicate that the film-density (ρ) increases with increasing T{sub s}. The index of refraction (n) profiles derived from spectroscopic ellipsometry analyses follow the Cauchy dispersion relation. Lorentz-Lorenz analysis (n{sub (λ)} = 550 nm) and optical-model adopted agree well with the XRR data/analyses. A direct T{sub s}-ρ-n relationship suggests that tailoring the optical quality is possible by tuning T{sub s} and the microstructure of HfO{sub 2} films.

  4. Deposition method for producing silicon carbide high-temperature semiconductors

    DOE Patents [OSTI]

    Hsu, George C.; Rohatgi, Naresh K.

    1987-01-01

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  5. Joining of porous silicon carbide bodies

    DOE Patents [OSTI]

    Bates, Carl H.; Couhig, John T.; Pelletier, Paul J.

    1990-05-01

    A method of joining two porous bodies of silicon carbide is disclosed. It entails utilizing an aqueous slip of a similar silicon carbide as was used to form the porous bodies, including the sintering aids, and a binder to initially join the porous bodies together. Then the composite structure is subjected to cold isostatic pressing to form a joint having good handling strength. Then the composite structure is subjected to pressureless sintering to form the final strong bond. Optionally, after the sintering the structure is subjected to hot isostatic pressing to further improve the joint and densify the structure. The result is a composite structure in which the joint is almost indistinguishable from the silicon carbide pieces which it joins.

  6. Carbides composite surface layers produced by (PTA)

    SciTech Connect (OSTI)

    Tajoure, Meloud; Tajouri, Ali E-mail: dr.mokhtarphd@yahoo.com; Abuzriba, Mokhtar E-mail: dr.mokhtarphd@yahoo.com; Akreem, Mosbah

    2013-12-16

    The plasma transferred arc technique was applied to deposit a composite layer of nickel base with tungsten carbide in powder form on to surface of low alloy steel 18G2A type according to polish standard. Results showed that, plasma transferred arc hard facing process was successfully conducted by using Deloro alloy 22 plus tungsten carbide powders. Maximum hardness of 1489 HV and minimum dilution of 8.4 % were achieved by using an arc current of 60 A. However, when the current was further increased to 120 A and the dilution increases with current increase while the hardness decreases. Microstructure of the nickel base deposit with tungsten carbide features uniform distribution of reinforcement particles with regular grain shape half - dissolved in the matrix.

  7. Fabrication of thorium bearing carbide fuels

    DOE Patents [OSTI]

    Gutierrez, Rueben L.; Herbst, Richard J.; Johnson, Karl W. R.

    1981-01-01

    Thorium-uranium carbide and thorium-plutonium carbide fuel pellets have been fabricated by the carbothermic reduction process. Temperatures of 1750.degree. C. and 2000.degree. C. were used during the reduction cycle. Sintering temperatures of 1800.degree. C. and 2000.degree. C. were used to prepare fuel pellet densities of 87% and >94% of theoretical, respectively. The process allows the fabrication of kilogram quantities of fuel with good reproducibility of chemicals and phase composition. Methods employing liquid techniques that form carbide microspheres or alloying-techniques which form alloys of thorium-uranium or thorium-plutonium suffer from limitation on the quantities processed of because of criticality concerns and lack of precise control of process conditions, respectively.

  8. Liquid phase sintering of silicon carbide

    DOE Patents [OSTI]

    Cutler, R.A.; Virkar, A.V.; Hurford, A.C.

    1989-05-09

    Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1,600 C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase. 4 figs.

  9. Liquid phase sintering of silicon carbide

    DOE Patents [OSTI]

    Cutler, Raymond A.; Virkar, Anil V.; Hurford, Andrew C.

    1989-01-01

    Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1600.degree. C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase.

  10. Making Silicon Carbide Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Making Silicon Carbide Devices in the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research cleanroom, I wanted to take some time to give you the dirt on our clean room over the

  11. Silicon Carbide Semiconductors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Silicon Carbide Power Semiconductor Devices in the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Silicon Carbide Power Semiconductor Devices in the Cleanroom Ron Olson 2012.10.04 I would like to introduce Zach Stum, the Wide Band Gap device engineer who is leading the "Next Generation SiC MOSFET"

  12. Interaction and merging of two sinistral filaments

    SciTech Connect (OSTI)

    Jiang, Yunchun; Yang, Jiayan; Liu, Yu; Li, Haidong; Wang, Haimin; Ji, Haisheng; Li, Jianping

    2014-09-20

    In this paper, we report the interaction and subsequent merging of two sinistral filaments (F1 and F2) occurring at the boundary of AR 9720 on 2001 December 6. The two filaments were close and nearly perpendicular to each other. The interaction occurred after F1 was erupted and the eruption was impeded by a more extended filament channel (FC) standing in the way, in which F2 was embedded. The erupted material ran into FC along its axis, causing F1 and F2 to merge into a single structure that subsequently underwent a large-amplitude to-and-fro motion. A significant plasma heating process was observed in the merging process, making the mixed material largely disappear from the H? passband, but appear in Extreme Ultraviolet Telescope 195 images for a while. These observations can serve as strong evidence of merging reconnection between the two colliding magnetic structures. A new sinistral filament was formed along FC after the cooling of the merged and heated material. No coronal mass ejection was observed to be associated with the event; though, the eruption was accompanied by a two-ribbon flare with a separation motion, indicating that the eruption had failed. This event shows that, in addition to overlying magnetic fields, such an interaction is an effective restraint to make a filament eruption fail in this way.

  13. Terahertz waves radiated from two noncollinear femtosecond plasma filaments

    SciTech Connect (OSTI)

    Du, Hai-Wei; Hoshina, Hiromichi; Otani, Chiko; Midorikawa, Katsumi

    2015-11-23

    Terahertz (THz) waves radiated from two noncollinear femtosecond plasma filaments with a crossing angle of 25° are investigated. The irradiated THz waves from the crossing filaments show a small THz pulse after the main THz pulse, which was not observed in those from single-filament scheme. Since the position of the small THz pulse changes with the time-delay of two filaments, this phenomenon can be explained by a model in which the small THz pulse is from the second filament. The denser plasma in the overlap region of the filaments changes the movement of space charges in the plasma, thereby changing the angular distribution of THz radiation. As a result, this schematic induces some THz wave from the second filament to propagate along the path of the THz wave from the first filament. Thus, this schematic alters the direction of the THz radiation from the filamentation, which can be used in THz wave remote sensing.

  14. Prealloyed catalyst for growing silicon carbide whiskers

    DOE Patents [OSTI]

    Shalek, Peter D. (Los Alamos, NM); Katz, Joel D. (Niagara Falls, NY); Hurley, George F. (Los Alamos, NM)

    1988-01-01

    A prealloyed metal catalyst is used to grow silicon carbide whiskers, especially in the .beta. form. Pretreating the metal particles to increase the weight percentages of carbon or silicon or both carbon and silicon allows whisker growth to begin immediately upon reaching growth temperature.

  15. High Q silicon carbide microdisk resonator

    SciTech Connect (OSTI)

    Lu, Xiyuan; Lee, Jonathan Y.; Feng, Philip X.-L.; Lin, Qiang

    2014-05-05

    We demonstrate a silicon carbide (SiC) microdisk resonator with optical Q up to 5.12??10{sup 4}. The high optical quality, together with the diversity of whispering-gallery modes and the tunability of external coupling, renders SiC microdisk a promising platform for integrated quantum photonics applications.

  16. Silicon dioxide and hafnium dioxide evaporation characteristics from a high-frequency sweep e-beam system

    SciTech Connect (OSTI)

    Chow, R. [Lawrence Livermore National Laboratory, Livermore, California 94551-0808 (United States); Tsujimoto, N. [MDC Vacuum Products Corporation, Hayward, California 94545 (United States)

    1996-09-01

    Reactive oxygen evaporation characteristics were determined as a function of the front-panel control parameters provided by a programmable, high-frequency sweep e-beam system. An experimental design strategy used deposition rate, beam speed, pattern, azimuthal rotation speed, and dwell time as the variables. The optimal settings for obtaining a broad thickness distribution, efficient silicon dioxide boule consumption, and minimal hafnium dioxide defect density were generated. The experimental design analysis showed the compromises involved with evaporating these oxides. {copyright} {ital 1996 Optical Society of America.}

  17. Filament velocity scaling laws for warm ions

    SciTech Connect (OSTI)

    Manz, P.; Max-Planck-Institut fr Plasmaphysik, EURATOM Assoziation, Boltzmannstr. 2, 85748 Garching ; Carralero, D.; Birkenmeier, G.; Mller, H. W.; Scott, B. D.; Mller, S. H.; Fuchert, G.; Stroth, U.; Physik-Department E28, Technische Universitt Mnchen, James-Franck-Str. 1, 85748 Garching

    2013-10-15

    The dynamics of filaments or blobs in the scrape-off layer of magnetic fusion devices are studied by magnitude estimates of a comprehensive drift-interchange-Alfvn fluid model. The standard blob models are reproduced in the cold ion case. Even though usually neglected, in the scrape-off layer, the ion temperature can exceed the electron temperature by an order of magnitude. The ion pressure affects the dynamics of filaments amongst others by adding up to the interchange drive and the polarisation current. It is shown how both effects modify the scaling laws for filament velocity in dependence of its size. Simplifications for experimentally relevant limit regimes are given. These are the sheath dissipation, collisional, and electromagnetic regime.

  18. Infrared Radiation Filament And Metnod Of Manufacture

    DOE Patents [OSTI]

    Johnson, Edward A.

    1998-11-17

    An improved IR radiation source is provided by the invention. A radiation filament has a textured surface produced by seeded ion bombardment of a metal foil which is cut to a serpentine shape and mounted in a windowed housing. Specific ion bombardment texturing techniques tune the surface to maximize emissions in the desired wavelength range and to limit emissions outside that narrow range, particularly at longer wavelengths. A combination of filament surface texture, thickness, material, shape and power circuit feedback control produce wavelength controlled and efficient radiation at much lower power requirements than devices of the prior art.

  19. GRAVITATIONAL INFALL ONTO MOLECULAR FILAMENTS. II. EXTERNALLY PRESSURIZED CYLINDERS

    SciTech Connect (OSTI)

    Heitsch, Fabian

    2013-10-10

    Two aspects of the evolution of externally pressurized, hydrostatic filaments are discussed. (1) The free-fall accretion of gas onto such a filament will lead to filament parameters (specifically, FWHM-column-density relations) inconsistent with the observations of Arzoumanian et al., except for two cases: for low-mass, isothermal filaments, agreement is found as in the analysis by Fischera and Martin. Magnetized cases, for which the field scales weakly with the density as B?n {sup 1/2}, also reproduce observed parameters. (2) Realistically, the filaments will be embedded not only in gas of non-zero pressure, but also of non-zero density. Thus, the appearance of sheet-embedded filaments is explored. Generating a grid of filament models and comparing the resulting column density ratios and profile shapes with observations suggests that the three-dimensional filament profiles are intrinsically flatter than isothermal, beyond projection and evolution effects.

  20. Light sources based on semiconductor current filaments

    DOE Patents [OSTI]

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  1. Solar filament material oscillations and drainage before eruption

    SciTech Connect (OSTI)

    Bi, Yi; Jiang, Yunchun; Yang, Jiayan; Hong, Junchao; Li, Haidong; Yang, Dan; Yang, Bo

    2014-08-01

    Both large-amplitude longitudinal (LAL) oscillations and material drainage in a solar filament are associated with the flow of material along the filament axis, often followed by an eruption. However, the relationship between these two motions and a subsequent eruption event is poorly understood. We analyze a filament eruption using EUV imaging data captured by the Atmospheric Imaging Array on board the Solar Dynamics Observatory and the H? images from the Global Oscillation Network Group. Hours before the eruption, the filament was activated, with one of its legs undergoing a slow rising motion. The asymmetric activation inclined the filament relative to the solar surface. After the active phase, LAL oscillations were observed in the inclined filament. The oscillation period increased slightly over time, which may suggest that the magnetic fields supporting the filament evolve to be flatter during the slow rising phase. After the oscillations, a significant amount of filament material was drained toward one filament endpoint, followed immediately by the violent eruption of the filament. The material drainage may further support the change in magnetic topology prior to the eruption. Moreover, we suggest that the filament material drainage could play a role in the transition from a slow to a fast rise of the erupting filament.

  2. Method for fabricating boron carbide articles

    DOE Patents [OSTI]

    Ardary, Zane L.; Reynolds, Carl D.

    1980-01-01

    The present invention is directed to the fabrication of boron carbide articles having length-to-diameter or width ratios greater than 2 to 1. The process of the present invention is practiced by the steps comprising hot pressing boron carbide powder into article segments or portions in which the segments have a length-to-diameter or width ratio less than 1.5, aligning a plurality of the initially hot-pressed segments in a hot-pressing die with the end surfaces of the segments placed in intimate contact with one another, and then hot pressing the aligned segments into an article of the desired configuration. The resulting article exhibits essentially uniform density throughout the structure with the bonds between the segments being equivalent in hardness, strength, and density to the remainder of the article.

  3. METHOD FOR PRODUCING CEMENTED CARBIDE ARTICLES

    DOE Patents [OSTI]

    Onstott, E.I.; Cremer, G.D.

    1959-07-14

    A method is described for making molded materials of intricate shape where the materials consist of mixtures of one or more hard metal carbides or oxides and matrix metals or binder metals thereof. In one embodiment of the invention 90% of finely comminuted tungsten carbide powder together with finely comminuted cobalt bonding agent is incorporated at 60 deg C into a slurry with methyl alcohol containing 1.5% paraffin, 3% camphor, 3.5% naphthalene, and 1.8% toluene. The compact is formed by the steps of placing the slurry in a mold at least one surface of which is porous to the fluid organic system, compacting the slurry, removing a portion of the mold from contact with the formed object and heating the formed object to remove the remaining organic matter and to sinter the compact.

  4. Filamentary structures in dense plasma focus: Current filaments or vortex filaments?

    SciTech Connect (OSTI)

    Soto, Leopoldo Pavez, Cristian; Moreno, José; Castillo, Fermin; Veloso, Felipe; Auluck, S. K. H.

    2014-07-15

    Recent observations of an azimuthally distributed array of sub-millimeter size sources of fusion protons and correlation between extreme ultraviolet (XUV) images of filaments with neutron yield in PF-1000 plasma focus have re-kindled interest in their significance. These filaments have been described variously in literature as current filaments and vortex filaments, with very little experimental evidence in support of either nomenclature. This paper provides, for the first time, experimental observations of filaments on a table-top plasma focus device using three techniques: framing photography of visible self-luminosity from the plasma, schlieren photography, and interferometry. Quantitative evaluation of density profile of filaments from interferometry reveals that their radius closely agrees with the collision-less ion skin depth. This is a signature of relaxed state of a Hall fluid, which has significant mass flow with equipartition between kinetic and magnetic energy, supporting the “vortex filament” description. This interpretation is consistent with empirical evidence of an efficient energy concentration mechanism inferred from nuclear reaction yields.

  5. Diamond-silicon carbide composite and method

    DOE Patents [OSTI]

    Zhao, Yusheng

    2011-06-14

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  6. Boron-carbide-aluminum and boron-carbide-reactive metal cermets

    DOE Patents [OSTI]

    Halverson, Danny C.; Pyzik, Aleksander J.; Aksay, Ilhan A.

    1986-01-01

    Hard, tough, lightweight boron-carbide-reactive metal composites, particularly boron-carbide-aluminum composites, are produced. These composites have compositions with a plurality of phases. A method is provided, including the steps of wetting and reacting the starting materials, by which the microstructures in the resulting composites can be controllably selected. Starting compositions, reaction temperatures, reaction times, and reaction atmospheres are parameters for controlling the process and resulting compositions. The ceramic phases are homogeneously distributed in the metal phases and adhesive forces at ceramic-metal interfaces are maximized. An initial consolidation step is used to achieve fully dense composites. Microstructures of boron-carbide-aluminum cermets have been produced with modulus of rupture exceeding 110 ksi and fracture toughness exceeding 12 ksi.sqroot.in. These composites and methods can be used to form a variety of structural elements.

  7. Harsh Environment Silicon Carbide Sensor Technology for Geothermal

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Instrumentation | Department of Energy Harsh Environment Silicon Carbide Sensor Technology for Geothermal Instrumentation Harsh Environment Silicon Carbide Sensor Technology for Geothermal Instrumentation Project objectives: Develop advanced sensor technology for the direct monitoring of geothermal reservoirs. Engineer sensors to survive and operate in H2O pressures up to 220 bar and temperatures as high as 374o C. high_pisano_silicon_carbide_sensor.pdf (841.42 KB) More Documents &

  8. Structural Evolution of Molybdenum Carbides in Hot Aqueous Environment...

    Office of Scientific and Technical Information (OSTI)

    Hydroprocessing of Acetic Acid Prev Next Title: Structural Evolution of Molybdenum Carbides in Hot Aqueous Environments and Impact on Low-Temperature Hydroprocessing of ...

  9. Silicon Carbide (SiC) Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at much higher frequencies and temperatures and convert electric power at higher efficiency or lower losses. ... Carbide Power Chip Fabrication Line GE is partnering with the SUNY ...

  10. Carbon p electron ferromagnetism in silicon carbide (Journal...

    Office of Scientific and Technical Information (OSTI)

    Carbon p electron ferromagnetism in silicon carbide Citation Details ... GrantContract Number: AC02-05CH11231 Type: Accepted Manuscript Journal Name: Scientific Reports ...

  11. A look back at Union Carbides first 20 Years in Nuclear Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laboratory Note: Union Carbide Nuclear Division, which started out as Carbide and Carbon Chemicals Company, operated the Atomic Energy CommissionEnergy Research and Development ...

  12. Hot filament CVD of boron nitride films

    DOE Patents [OSTI]

    Rye, Robert R.

    1992-01-01

    Using a hot filament (.apprxeq.1400.degree. C.) to activate borazine (B.sub.3 N.sub.3 H.sub.6) molecules for subsequent reaction with a direct line-of-sight substrate, transparent boron ntiride films as thick as 25,000 angstroms are grown for a substrate temperature as low as 100.degree. C. The minimum temperature is determined by radiative heating from the adjacent hot filament. The low temperature BN films show no indication of crystallinity with X-ray diffraction (XRD). X-ray photoelectron spectra (XPS) show the films to have a B:N ratio of 0.97:1 with no other XPS detectable impurities above the 0.5% level. Both Raman and infrared (IR) spectroscopy are characteristic of h-BN with small amounts of hydrogen detected as N-H and B-H bands in the IR spectrum. An important feature of this method is the separation and localization of the thermal activation step at the hot filament from the surface reaction and film growth steps at the substrate surface. This allows both higher temperature thermal activation and lower temperature film growth.

  13. Experimental and first-principles studies on the elastic properties of α-hafnium metal under pressure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qi, Xintong; Wang, Xuebing; Chen, Ting; Li, Baosheng

    2016-03-30

    Compressional and shear wave velocities of the α phase of hafnium have been measured up to 10.4 GPa at room temperature using ultrasonic interferometry in a multi-anvil apparatus. A finite strain equation of state analysis yielded Ks0 = 110.4 (5) GPa, G0 = 54.7(5) GPa,Ks0' = 3.7 and G0' = 0.6 for the elastic bulk and shear moduli and their pressure derivatives at ambient conditions. Complementary to the experimental data, the single crystal elastic constants, elastic anisotropy and the unit cell axial ratio c/a of α-hafnium at high pressures were investigated by Density Functional Theory (DFT) based first principles calculations.more » A c/a value of 1.605 is predicted for α-Hf at 40 GPa, which is in excellent agreement with previous experimental results. The low-pressure derivative of the shear modulus observed in our experimental data up to 10 GPa was found to originate from the elastic constant C44 which exhibits negligible pressure dependence within the current experimental pressure range. At higher pressures (>10 GPa), C44 was predicted to soften and the shear wave velocity νS trended to decrease with pressure, which can be interpreted as a precursor to the α-ω transition similar to that observed in other group IV elements (titanium and zirconium). Here, the acoustic velocities, bulk and shear moduli, and the acoustic Debye temperature (θD = 240.1 K) determined from the current experiments were all compared well with those predicted by our theoretical DFT calculations.« less

  14. Molybdenum disilicide composites reinforced with zirconia and silicon carbide

    DOE Patents [OSTI]

    Petrovic, J.J.

    1995-01-17

    Compositions are disclosed consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

  15. Molybdenum disilicide composites reinforced with zirconia and silicon carbide

    DOE Patents [OSTI]

    Petrovic, John J. (Los Alamos, NM)

    1995-01-01

    Compositions consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

  16. Method for producing silicon nitride/silicon carbide composite

    DOE Patents [OSTI]

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-07-23

    Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

  17. Method of forming impermeable carbide coats on graphite

    DOE Patents [OSTI]

    Wohlberg, C.

    1973-12-11

    A method of forming an impermeable refractory metal carbide coating on graphite is described in which a metal containing oxidant and a carbide former are applied to the surface of the graphite, heated to a temperature of between 1200 and 1500 deg C in an inert gas, under a vacuum and continuing to heat to about 2300 deg C. (Official Gazette)

  18. Method of coating graphite tubes with refractory metal carbides

    DOE Patents [OSTI]

    Wohlberg, C.

    1973-12-11

    A method of coating graphite tubes with a refractory metal carbide is described. An alkali halide is reacted with a metallic oxide, the metallic portion being selected from the IVth or Vth group of the Periodic Table, the resulting salt reacting in turn with the carbon to give the desired refractory metal carbide coating. (Official Gazette)

  19. Structural and mechanical properties of thorium carbide

    SciTech Connect (OSTI)

    Aynyas, Mahendra; Pataiya, Jagdeesh; Arya, B. S.; Singh, A.; Sanyal, S. P.

    2015-06-24

    We have investigated the cohesive energies, equilibrium lattice constants, pressure-volume relationship, phase transition pressure and elastic constant for thorium carbide using an interionic potential theory with modified ionic charge, which includes Coulomb screening effect due to d-electrons. This compound undergoes structural phase transition from NaCl (B{sub 1}) to CsCl (B{sub 2}) structure at high pressure 40 GPa. We have also calculated bulk, Young, and shear moduli, Poisson ratio and anisotropic ratio in NaCl (B{sub 1}) structure and compared them with other experimental and theoretical results which show a good agreement.

  20. METHOD FOR COATING GRAPHITE WITH NIOBIUM CARBIDE

    DOE Patents [OSTI]

    Kane, J.S.; Carpenter, J.H.; Krikorian, O.H.

    1962-01-16

    A method is given for coating graphite with a hard, tenacious layer of niobium carbide up to 30 mils or more thick. The method makes use of the discovery that niobium metal, if degassed and heated rapidly below the carburization temperature in contact with graphite, spreads, wets, and penetrates the graphite without carburization. The method includes the obvious steps of physically contacting niobium powders or other physical forms of niobium with graphite, degassing the assembly below the niobium melting point, e.g., 1400 deg C, heating to about 2200 to 2400 deg C within about 15 minutes while outgassing at a high volume throughput, and thereafter carburizing the niobium. (AEC)

  1. Corrosion and wear resistance of tungsten carbide-cobalt and tungsten carbide-cobalt-chromium thermal spray coatings

    SciTech Connect (OSTI)

    Quets, J.; Alford, J.R.

    1999-07-01

    Tungsten carbide thermal spray coatings provide wear surfaces to new and overhauled components for various industries. Their wear resistance is obtained by incorporating small tungsten carbide particles into a metal matrix. This presentation will show what parameters influence their corrosion resistance in the ASTM B-117 Salt Spray Corrosion Test,

  2. A FILAMENT ERUPTION ON 2010 OCTOBER 21 FROM THREE VIEWPOINTS

    SciTech Connect (OSTI)

    Filippov, Boris

    2013-08-10

    A filament eruption on 2010 October 21 observed from three different viewpoints by the Solar Terrestrial Relations Observatory and the Solar Dynamic Observatory is analyzed by also invoking data from the Solar and Heliospheric Observatory and the Kanzelhoehe Solar Observatory. The position of the filament just before the eruption at the central meridian not far from the center of the solar disk was favorable for photospheric magnetic field measurements in the area below the filament. Because of this, we were able to calculate with high precision the distribution of the coronal potential magnetic field near the filament. We found that the filament began to erupt when it approached the height in the corona where the magnetic field decay index was greater than 1. We also determined that during the initial stage of the eruption the filament moved along the magnetic neutral surface.

  3. Microwave guiding in air along single femtosecond laser filament

    SciTech Connect (OSTI)

    Ren Yu; Alshershby, Mostafa; Qin Jiang; Hao Zuoqiang; Lin Jingquan

    2013-03-07

    Microwave guiding along single plasma filament generated through the propagation of femtosecond (fs) laser pulses in air has been demonstrated over a distance of about 6.5 cm, corresponding to a microwave signal intensity enhancement of more than 3-fold over free space propagation. The current propagation distance along the fs laser filament is in agreement with the calculations and limited by the relatively high resistance of the single plasma filament. Using a single fs laser filament to channel microwave radiation considerably alleviate requirements to the power of fs laser pulses compared to the case of the circular filaments waveguide. In addition, it can be used as a simple and non-intrusive method to obtain the basic parameters of laser-generated plasma filament.

  4. Dynamic compaction of tungsten carbide powder.

    SciTech Connect (OSTI)

    Gluth, Jeffrey Weston; Hall, Clint Allen; Vogler, Tracy John; Grady, Dennis Edward

    2005-04-01

    The shock compaction behavior of a tungsten carbide powder was investigated using a new experimental design for gas-gun experiments. This design allows the Hugoniot properties to be measured with reasonably good accuracy despite the inherent difficulties involved with distended powders. The experiments also provide the first reshock state for the compacted powder. Experiments were conducted at impact velocities of 245, 500, and 711 m/s. A steady shock wave was observed for some of the sample thicknesses, but the remainder were attenuated due to release from the back of the impactor or the edge of the sample. The shock velocity for the powder was found to be quite low, and the propagating shock waves were seen to be very dispersive. The Hugoniot density for the 711 m/s experiment was close to ambient crystal density for tungsten carbide, indicating nearly complete compaction. When compared with quasi-static compaction results for the same material, the dynamic compaction data is seen to be significantly stiffer for the regime over which they overlap. Based on these initial results, recommendations are made for improving the experimental technique and for future work to improve our understanding of powder compaction.

  5. High temperature intermetallic binders for HVOF carbides

    SciTech Connect (OSTI)

    Shaw, K.G.; Gruninger, M.F.; Jarosinski, W.J.

    1994-12-31

    Gas turbines technology has a long history of employing the desirable high temperature physical attributes of ceramic-metallic (cermet) materials. The most commonly used coatings incorporate combinations of WC-Co and Cr{sub 3}C{sub 2}-NiCr, which have also been successfully utilized in other non-turbine coating applications. Increased turbine operating temperatures and other high temperature service conditions have made apparent the attractive notion of increasing the temperature capability and corrosion resistance of these coatings. In this study the intermetallic binder NiAl has been used to replace the cobalt and NiCr constituents of conventional WC and Cr{sub 3}C{sub 2} cermet powders. The composite carbide thermal spray powders were fabricated for use in the HVOF coating process. The structure of HVOF deposited NiAl-carbide coatings are compared directly to the more familiar WC-Co and Cr{sub 3}C{sub 2}-NiCr coatings using X-ray diffraction, back-scattered electron imaging (BEI) and electron dispersive spectroscopy (EDS). Hardness variations with temperature are reported and compared between the NiAl and Co/NiCr binders.

  6. Tailoring femtosecond laser pulse filamentation using plasma photonic lattices

    SciTech Connect (OSTI)

    Suntsov, Sergiy; Abdollahpour, Daryoush; Panagiotopoulos, Paris; Papazoglou, Dimitrios G.; Tzortzakis, Stelios; Couairon, Arnaud

    2013-07-08

    We demonstrate experimentally that by using transient plasma photonic lattices, the attributes of intense femtosecond laser filaments, such as peak intensity and length, can be dynamically controlled. The extended plasma lattice structure is generated using two co-propagating non-diffracting intense Bessel beams in water. The use of such transient lattice structures to control the competition between linear and nonlinear effects involved in filamentation opens the way for extensive control of the filamentation process.

  7. Microwave diagnostics of femtosecond laser-generated plasma filaments

    SciTech Connect (OSTI)

    Papeer, J.; Ehrlich, Y.; Zigler, A.; Mitchell, C.; Penano, J.; Sprangle, P.

    2011-10-03

    We present a simple non-intrusive experimental method allowing a complete single shot temporal measurement of laser produced plasma filament conductivity. The method is based on filament interaction with low intensity microwave radiation in a rectangular waveguide. The suggested diagnostics allow a complete single shot temporal analysis of filament plasma decay with resolution better than 0.3 ns and high spatial resolution along the filament. The experimental results are compared to numerical simulations, and an initial electron density of 7 x 10{sup 16 }cm{sup -3} and decay time of 3 ns are obtained.

  8. Hollow cylindrical plasma filament waveguide with discontinuous finite thickness cladding

    SciTech Connect (OSTI)

    Alshershby, Mostafa; Hao Zuoqiang; Lin Jingquan

    2013-01-15

    We have explored here a hollow cylindrical laser plasma multifilament waveguide with discontinuous finite thickness cladding, in which the separation between individual filaments is in the range of several millimeters and the waveguide cladding thickness is in the order of the microwave penetration depth. Such parameters give a closer representation of a realistic laser filament waveguide sustained by a long stable propagation of femtosecond (fs) laser pulses. We report how the waveguide losses depend on structural parameters like normalized plasma filament spacing, filament to filament distance or pitch, normal spatial frequency, and radius of the plasma filament. We found that for typical plasma parameters, the proposed waveguide can support guided modes of microwaves in extremely high frequency even with a cladding consisting of only one ring of plasma filaments. The loss of the microwave radiation is mainly caused by tunneling through the discontinuous finite cladding, i.e., confinement loss, and is weakly dependent on the plasma absorption. In addition, the analysis indicates that the propagation loss is fairly large compared with the loss of a plasma waveguide with a continuous infinite thickness cladding, while they are comparable when using a cladding contains more than one ring. Compared to free space propagation, this waveguide still presents a superior microwave transmission to some distance in the order of the filamentation length; thus, the laser plasma filaments waveguide may be a potential channel for transporting pulsed-modulated microwaves if ensuring a long and stable propagation of fs laser pulses.

  9. Computational Studies of Physical Properties of Boron Carbide

    SciTech Connect (OSTI)

    Lizhi Ouyang

    2011-09-30

    The overall goal is to provide valuable insight in to the mechanisms and processes that could lead to better engineering the widely used boron carbide which could play an important role in current plight towards greener energy. Carbon distribution in boron carbide, which has been difficult to retrieve from experimental methods, is critical to our understanding of its structure-properties relation. For modeling disorders in boron carbide, we implemented a first principles method based on supercell approach within our G(P,T) package. The supercell approach was applied to boron carbide to determine its carbon distribution. Our results reveal that carbon prefers to occupy the end sites of the 3-atom chain in boron carbide and further carbon atoms will distribute mainly on the equatorial sites with a small percentage on the 3-atom chains and the apex sites. Supercell approach was also applied to study mechanical properties of boron carbide under uniaxial load. We found that uniaxial load can lead to amorphization. Other physical properties of boron carbide were calculated using the G(P,T) package.

  10. Silicon Carbide in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inside the GE Global Research Clean Room: Silicon Carbide Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inside the GE Global Research Clean Room: Silicon Carbide GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-research The Dirt

  11. Method of preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals

    DOE Patents [OSTI]

    Peng, Yu-Min; Wang, Jih-Wen; Liue, Chun-Ying; Yeh, Shinn-Horng

    1994-01-01

    A method for preparing silicon carbide particles dispersed in an electrolytic bath for composite electroplating of metals includes the steps of washing the silicon carbide particles with an organic solvent; washing the silicon carbide particles with an inorganic acid; grinding the silicon carbide particles; and heating the silicon carbide particles in a nickel-containing solution at a boiling temperature for a predetermined period of time.

  12. Neutron irradiation induced amorphization of silicon carbide

    SciTech Connect (OSTI)

    Snead, L.L.; Hay, J.C.

    1998-09-01

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 {times} 10{sup 25} n/m{sup 2}. Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density ({minus}10.8%), elastic modulus as measured using a nanoindentation technique ({minus}45%), hardness as measured by nanoindentation ({minus}45%), and standard Vickers hardness ({minus}24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C.

  13. Method of producing silicon carbide articles

    DOE Patents [OSTI]

    Milewski, John V.

    1985-01-01

    A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.

  14. Method for simultaneously coating a plurality of filaments

    DOE Patents [OSTI]

    Miller, Paul A.; Pochan, Paul D.; Siegal, Michael P.; Dominguez, Frank

    1995-01-01

    Methods and apparatuses for coating materials, and the products and compositions produced thereby. Substances, such as diamond or diamond-like carbon, are deposited onto materials, such as a filament or a plurality of filaments simultaneously, using one or more cylindrical, inductively coupled, resonator plasma reactors.

  15. Plasma Blobs and Filaments: Fusion Scientists Discover Secrets of Turbulent

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Edge Transport | Princeton Plasma Physics Lab Plasma Blobs and Filaments: Fusion Scientists Discover Secrets of Turbulent Edge Transport American Fusion News Category: U.S. Universities Link: Plasma Blobs and Filaments: Fusion Scientists Discover Secrets of Turbulent Edge Transport

  16. Method for simultaneously coating a plurality of filaments

    DOE Patents [OSTI]

    Miller, P.A.; Pochan, P.D.; Siegal, M.P.; Dominguez, F.

    1995-07-11

    Methods and apparatuses are disclosed for coating materials, and the products and compositions produced thereby. Substances, such as diamond or diamond-like carbon, are deposited onto materials, such as a filament or a plurality of filaments simultaneously, using one or more cylindrical, inductively coupled, resonator plasma reactors. 3 figs.

  17. GALAXY SPIN ALIGNMENT IN FILAMENTS AND SHEETS: OBSERVATIONAL EVIDENCE

    SciTech Connect (OSTI)

    Tempel, Elmo; Libeskind, Noam I. E-mail: nlibeskind@aip.de

    2013-10-01

    The properties of galaxies are known to be affected by their environment. One important question is how their angular momentum reflects the surrounding cosmic web. We use the Sloan Digital Sky Survey to investigate the spin axes of spiral and elliptical galaxies relative to their surrounding filament/sheet orientations. To detect filaments, a marked point process with interactions (the {sup B}isous model{sup )} is used. Sheets are found by detecting 'flattened' filaments. The minor axes of ellipticals are found to be preferentially perpendicular to hosting filaments. A weak correlation is found with sheets. These findings are consistent with the notion that elliptical galaxies formed via mergers, which predominantly occurred along the filaments. The spin axis of spiral galaxies is found to align with the host filament, with no correlation between spiral spin and sheet normal. When examined as a function of distance from the filament axis, a much stronger correlation is found in the outer parts, suggesting that the alignment is driven by the laminar infall of gas from sheets to filaments. When compared with numerical simulations, our results suggest that the connection between dark matter halo and galaxy spin is not straightforward. Our results provide an important input to the understanding of how galaxies acquire their angular momentum.

  18. Process for the production of superconductor containing filaments

    DOE Patents [OSTI]

    Tuominen, Olli P.; Hoyt, Matthew B.; Mitchell, David F.; Morgan, Carol W.; Roberts, Clyde Gordon; Tyler, Robert A.

    2002-01-01

    Superconductor containing filaments having embedments of superconducting material surrounded by a rayon matrix are formed by preparing a liquid suspension which contains at least 10 weight percent superconducting material; forming a multicomponent filament having a core of the suspension and a viscose sheath which contains cellulose xanthate; and thereafter, regenerating cellulose from the cellulose xanthate to form a rayon matrix.

  19. Filament capturing with the multimaterial moment-of-fluid method*

    SciTech Connect (OSTI)

    Jemison, Matthew; Sussman, Mark; Shashkov, Mikhail

    2015-01-15

    A novel method for capturing two-dimensional, thin, under-resolved material configurations, known as “filaments,” is presented in the context of interface reconstruction. This technique uses a partitioning procedure to detect disconnected regions of material in the advective preimage of a cell (indicative of a filament) and makes use of the existing functionality of the Multimaterial Moment-of-Fluid interface reconstruction method to accurately capture the under-resolved feature, while exactly conserving volume. An algorithm for Adaptive Mesh Refinement in the presence of filaments is developed so that refinement is introduced only near the tips of filaments and where the Moment-of-Fluid reconstruction error is still large. Comparison to the standard Moment-of-Fluid method is made. As a result, it is demonstrated that using filament capturing at a given resolution yields gains in accuracy comparable to introducing an additional level of mesh refinement at significantly lower cost.

  20. Conduction in alumina with atomic scale copper filaments

    SciTech Connect (OSTI)

    Xu, Xu; Liu, Jie; Anantram, M. P.

    2014-10-28

    The conductance of atomic scale filaments with three and seven Cu atoms in ?-alumina are calculated using ab initio density functional theory. We find that the filament with 3 Cu atoms is sufficient to increase the conductance of 1.3?nm thick alumina film by more than 10{sup 3} times in linear response. As the applied voltage increases, the current quickly saturates and differential resistance becomes negative. Compared to the filament with three Cu atoms, while the conductance of the filament with seven Cu atoms is comparable in linear response, they carry as much as twenty times larger current at large biases. The electron transport is analyzed based on local density of states, and the negative differential resistance in the seven Cu filaments occurs due to their narrow bandwidth.

  1. Process for preparing fine grain silicon carbide powder

    DOE Patents [OSTI]

    Wei, G.C.

    Method of producing fine-grain silicon carbide powder comprises combining methyltrimethoxysilane with a solution of phenolic resin, acetone and water or sugar and water, gelling the resulting mixture, and then drying and heating the obtained gel.

  2. The interfacial orientation relationship of oxide nanoparticles in a hafnium-containing oxide dispersion-strengthened austenitic stainless steel

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Miao, Yinbin; Mo, Kun; Cui, Bai; Chen, Wei-Ying; Miller, Michael K.; Powers, Kathy A.; McCreary, Virginia; Gross, David; Almer, Jonathan; Robertson, Ian M.; et al

    2015-01-26

    We report comprehensive investigations on the orientation relationship of the oxide nanoparticles in a hafnium-containing austenitic oxide dispersion-strengthened 316 stainless steel. The phases of the oxide nanoparticles were determined by a combination of scanning transmission electron microscopy–electron dispersive X-ray spectroscopy, atom probe tomography and synchrotron X-ray diffraction to be complex Y–Ti–Hf–O compounds with similar crystal structures, including bixbyite Y2O3, fluorite Y2O3–HfO2 solid solution and pyrochlore (or fluorite) Y2(Ti,Hf)2 - xO7 - x. High resolution transmission electron microscopy was used to characterize the particle–matrix interfaces. Moreover, two different coherency relationships along with one axis-parallel relation between the oxide nanoparticles and themore » steel matrix were found. The size of the nanoparticles significantly influences the orientation relationship. Our results provide insight into the relationship of these nanoparticles with the matrix, which has implications for interpreting material properties as well as responses to radiation.« less

  3. Understanding the Irradiation Behavior of Zirconium Carbide

    SciTech Connect (OSTI)

    Motta, Arthur; Sridharan, Kumar; Morgan, Dane; Szlufarska, Izabela

    2013-10-11

    Zirconium carbide (ZrC) is being considered for utilization in high-temperature gas-cooled reactor fuels in deep-burn TRISO fuel. Zirconium carbide possesses a cubic B1-type crystal structure with a high melting point, exceptional hardness, and good thermal and electrical conductivities. The use of ZrC as part of the TRISO fuel requires a thorough understanding of its irradiation response. However, the radiation effects on ZrC are still poorly understood. The majority of the existing research is focused on the radiation damage phenomena at higher temperatures (>450{degree}C) where many fundamental aspects of defect production and kinetics cannot be easily distinguished. Little is known about basic defect formation, clustering, and evolution of ZrC under irradiation, although some atomistic simulation and phenomenological studies have been performed. Such detailed information is needed to construct a model describing the microstructural evolution in fast-neutron irradiated materials that will be of great technological importance for the development of ZrC- based fuel. The goal of the proposed project is to gain fundamental understanding of the radiation-induced defect formation in zirconium carbide and irradiation response (ZrC) by using a combination of state-of-the-art experimental methods and atomistic modeling. This project will combine (1) in situ ion irradiation at a specialized facility at a national laboratory, (2) controlled temperature proton irradiation on bulk samples, and (3) atomistic modeling to gain a fundamental understanding of defect formation in ZrC. The proposed project will cover the irradiation temperatures from cryogenic temperature to as high as 800{degree}C, and dose ranges from 0.1 to 100 dpa. The examination of this wide range of temperatures and doses allows us to obtain an experimental data set that can be effectively used to exercise and benchmark the computer calculations of defect properties. Combining the examination of radiation

  4. ERUPTION OF A SOLAR FILAMENT CONSISTING OF TWO THREADS

    SciTech Connect (OSTI)

    Bi Yi; Jiang Yunchun; Li Haidong; Hong Junchao; Zheng Ruisheng E-mail: jyc@ynao.ac.cn

    2012-10-10

    The trigger and driving mechanism for the eruption of a filament consisting of two dark threads was studied with unprecedented high cadence and resolution of He II 304 A observations made by the Atmospheric Imagining Assembly (AIA) on board the Solar Dynamics Observatory (SDO) and the observations made by the Solar Magnetic Activity Research Telescope and the Extreme Ultraviolet Imager (EUVI) telescope on board the Solar Terrestrial Relations Observatory Ahead (STEREO-A). The filament was located at the periphery of the active region NOAA 11228 and erupted on 2011 June 6. At the onset of the eruption, a turbulent filament thread was found to be heated and to elongate in stride over a second one. After it rose slowly, most interestingly, the elongating thread was driven to contact and interact with the second one, and it then erupted with its southern leg being wrapped by a newly formed thread produced by the magnetic reconnection between fields carried by the two threads. Combining the observations from STEREO-A/EUVI and SDO/AIA 304 A images, the three-dimensional shape of the axis of the filament was obtained and it was found that only the southern leg of the eruptive filament underwent rotation. We suggest that the eruption was triggered by the reconnection of the turbulent filament thread and the surrounding magnetic field, and that it was mainly driven by the kink instability of the southern leg of the eruptive filament that possessed a more twisted field introduced by the reconnection-produced thread.

  5. ORIGIN OF THE DENSE CORE MASS FUNCTION IN CONTRACTING FILAMENTS

    SciTech Connect (OSTI)

    Myers, Philip C.

    2013-02-20

    Mass functions of starless dense cores (CMFs) may arise from contraction and dispersal of core-forming filaments. In an illustrative model, a filament contracts radially by self-gravity, increasing the mass of its cores. During this contraction, FUV photoevaporation and ablation by shocks and winds disperse filament gas and limit core growth. The stopping times of core growth are described by a waiting-time distribution. The initial filament column density profile and the resulting CMF each match recent Herschel observations in detail. Then low-mass cores have short growth ages and arise from the innermost filament gas, while massive cores have long growth ages and draw from more extended filament gas. The model fits the initial density profile and CMF best for mean core density 2 Multiplication-Sign 10{sup 4} cm{sup -3} and filament dispersal timescale 0.5 Myr. Then the typical core mass, radius, mean column density, and contraction speed are respectively 0.8 solar masses, 0.06 pc, 6 Multiplication-Sign 10{sup 21} cm{sup -2}, and 0.07 km s{sup -1}, also in accord with observed values.

  6. Nanostructured carbide catalysts for the hydrogen economy

    SciTech Connect (OSTI)

    Ram Seshadri, Susannah Scott, Juergen Eckert

    2008-07-21

    The above quote, taken from the executive summary of the Report from the US DOE Basic Energy Sciences Workshop held August 6–8, 2007,[1] places in context the research carried out at the University of California, Santa Barbara, which is reported in this document. The enormous impact of heterogeneous catalysis is exemplified by the Haber process for the synthesis of ammonia, which consumes a few % of the world’s energy supply and natural gas, and feeds as many as a third of the world’s population. While there have been numerous advances in understanding the process,[2] culminating in the awarding of the Nobel Prize to Gerhard Ertl in 2007, it is interesting to note that the catalysts themselves have changed very little since they were discovered heuristically in the the early part of the 20th century. The thesis of this report is that modern materials chemistry, with all the empirical knowledge of solid state chemistry, combined with cutting edge structural tools, can help develop and better heterogeneous catalysis. The first part of this report describes research in the area of early transition metal carbides (notably of Mo and W), potentially useful catalysts for water gas shift (WGS) and related reactions of use to the hydrogen economy. Although these carbides have been known to be catalytically useful since the 1970s,[3] further use of these relatively inexpensive materials have been plagued by issues of low surface areas and ill-defined, and often unreactive surfaces, in conjunction with deactivation. We have employed for the first time, a combination of constant-wavelength and time-of-flight neutron scattering, including a total scattering analysis of the latter data, to better understand what happens in these materials, in a manner that for the first time, reveals surface graphitic carbon in these materials in a quantitative manner. Problems of preparation, surface stability, and irreversible reactivity have become manifest in this class of materials

  7. Thermal and Chemical Evolution of Collapsing Filaments (Journal...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Thermal and Chemical Evolution of Collapsing Filaments Citation Details ... OSTI Identifier: 1104515 Report Number(s): LLNL-JRNL-611892 Journal ID: ISSN 0004-637X DOE ...

  8. Apparatus for coating and impregnating filament with resin

    DOE Patents [OSTI]

    Robinson, S.C.; Pollard, R.E.

    1986-12-17

    The present invention is directed to an apparatus for evenly coating and impregnating a filament with binder material. Dimension control and repeatability of the coating and impregnating characteristics are obtained with the apparatus.

  9. Collective alignment of polar filaments by molecular motors.

    SciTech Connect (OSTI)

    Ziebert, F.; Aranson, I. S.; Vershinin, M.; Gross, S. P.; Materials Science Division; Univ. of California at Irvine

    2009-04-01

    We study the alignment of polar biofilaments, such as microtubules and actin, subject to the action of multiple molecular motors attached simultaneously to more than one filament. Focusing on a paradigm model of only two filaments interacting with multiple motors, we were able to investigate in detail the alignment dynamics. While almost no alignment occurs in the case of a single motor, the filaments become rapidly aligned due to the collective action of the motors. Our analysis shows that the alignment time is governed by the number of bound motors and the magnitude of the motors stepping fluctuations. We predict that the time scale of alignment is in the order of seconds, much faster than that reported for passive crosslink-induced bundling. In vitro experiments on the alignment of microtubules by multiple-motor covered beads are in qualitative agreement. We also discuss another mode of fast alignment of filaments, namely the cooperation between motors and passive crosslinks.

  10. THREE-DIMENSIONAL SHAPE AND EVOLUTION OF TWO ERUPTIVE FILAMENTS

    SciTech Connect (OSTI)

    Li Ting; Zhang Jun; Yang Shuhong; Zhao Hui E-mail: zjun@nao.cas.c E-mail: v00975@phys.nthu.edu.t

    2010-09-01

    On 2009 September 26, a dramatic and large filament (LF) eruption and a small filament (SF) eruption were observed in the He II 304 A line by the two EUVI telescopes aboard the STEREO A and B spacecraft. The LF heads out into space and becomes the bright core of a gradual coronal mass ejection (CME), while the eruption of the SF is characterized by motions of the filament materials. Using stereoscopic analysis of EUVI data, we reconstruct the three-dimensional shape and evolution of two eruptive filaments. For the first time, we investigate the true velocities and accelerations of 12 points along the axis of the LF, and find that the velocity and acceleration vary with the measured location. The highest points among the 12 points are the fastest in the first half hour, and then the points at the low-latitude leg of the LF become the fastest. For the SF, it is an asymmetric whip-like filament eruption, and the downward motions of the material lead to the disappearance of the former high-latitude endpoint and the formation of a new low-latitude endpoint. Based on the temporal evolution of the two filaments, we infer that the two filaments lie in the same filament channel. By combining the EUVI, COR1, and COR2 data of STEREO A together, we find that there is no impulsive or fast acceleration in this event. It displays a weak and persistent acceleration for more than 17 hr. The average velocity and acceleration of the LF are 101.8 km s{sup -1} and 2.9 m s{sup -2}, respectively. The filament eruptions are associated with a slow CME with an average velocity of 177.4 km s{sup -1}. The velocity of the CME is nearly 1.6 times as large as that of the filament material. This event is one example of a gradual filament eruption associated with a gradual CME. In addition, the moving direction of the LF changes from a non-radial to a nearly radial direction with a variation of inclination angle of nearly 38.{sup 0}2.

  11. Optically Directed Assembly of Continuous Mesoscale Filaments (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Journal Article: Optically Directed Assembly of Continuous Mesoscale Filaments Citation Details In-Document Search Title: Optically Directed Assembly of Continuous Mesoscale Filaments Authors: Bahns, J. T. ; Sankaranarayanan, S. K. R. S. ; Gray, S. K. ; Chen, L. Publication Date: 2011-02-28 OSTI Identifier: 1099937 Type: Publisher's Accepted Manuscript Journal Name: Physical Review Letters Additional Journal Information: Journal Volume: 106; Journal Issue: 9;

  12. 7-forming, superconducting filaments through bicomponent dry spinning

    DOE Patents [OSTI]

    Tuominen, Olli P.; Morgan, Carol W.; Burlone, Dominick A.; Blankenship, Keith V.

    2001-01-01

    Fibers which contain potentially superconducting material are dry spun by the steps of preparing a suspension of potentially superconducting powder in a thickened solvent; preparing a solution of fiber-forming polymer; supplying the suspension and the solution to a spinning apparatus; in the spinning apparatus, arranging the solution and the suspension in a bicomponent arrangement; extruding the arranged solution and suspension from a spinneret as a bicomponent filament; and removing the solvent from the filament.

  13. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  14. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  15. Structure-Property Relationship in Metal Carbides and Bimetallic Alloys

    SciTech Connect (OSTI)

    Chen, Jingguan

    2014-03-04

    The primary objective of our DOE/BES sponsored research is to use carbide and bimetallic catalysts as model systems to demonstrate the feasibility of tuning the catalytic activity, selectivity and stability. Our efforts involve three parallel approaches, with the aim at studying single crystal model surfaces and bridging the materials gap and pressure gap between fundamental surface science studies and real world catalysis. The utilization of the three parallel approaches has led to the discovery of many intriguing catalytic properties of carbide and bimetallic surfaces and catalysts. During the past funding period we have utilized these combined research approaches to explore the possibility of predicting and verifying bimetallic and carbide combinations with enhanced catalytic activity, selectivity and stability.

  16. The growth mechanism of grain boundary carbide in Alloy 690

    SciTech Connect (OSTI)

    Li, Hui; Xia, Shuang; Zhou, Bangxin; Peng, Jianchao

    2013-07-15

    The growth mechanism of grain boundary M{sub 23}C{sub 6} carbides in nickel base Alloy 690 after aging at 715 °C was investigated by high resolution transmission electron microscopy. The grain boundary carbides have coherent orientation relationship with only one side of the matrix. The incoherent phase interface between M{sub 23}C{sub 6} and matrix was curved, and did not lie on any specific crystal plane. The M{sub 23}C{sub 6} carbide transforms from the matrix phase directly at the incoherent interface. The flat coherent phase interface generally lies on low index crystal planes, such as (011) and (111) planes. The M{sub 23}C{sub 6} carbide transforms from a transition phase found at curved coherent phase interface. The transition phase has a complex hexagonal crystal structure, and has coherent orientation relationship with matrix and M{sub 23}C{sub 6}: (111){sub matrix}//(0001){sub transition}//(111){sub carbide}, <112{sup ¯}>{sub matrix}//<21{sup ¯}10>{sub transition}//<112{sup ¯}>{sub carbide}. The crystal lattice constants of transition phase are c{sub transition}=√(3)×a{sub matrix} and a{sub transition}=√(6)/2×a{sub matrix}. Based on the experimental results, the growth mechanism of M{sub 23}C{sub 6} and the formation mechanism of transition phase are discussed. - Highlights: • A transition phase was observed at the coherent interfaces of M{sub 23}C{sub 6} and matrix. • The transition phase has hexagonal structure, and is coherent with matrix and M{sub 23}C{sub 6}. • The M{sub 23}C{sub 6} transforms from the matrix directly at the incoherent phase interface.

  17. Evolution of carbides in cold-work tool steels

    SciTech Connect (OSTI)

    Kim, Hoyoung; Kang, Jun-Yun; Son, Dongmin; Lee, Tae-Ho; Cho, Kyung-Mox

    2015-09-15

    This study aimed to present the complete history of carbide evolution in a cold-work tool steel along its full processing route for fabrication and application. A sequence of processes from cast to final hardening heat treatment was conducted on an 8% Cr-steel to reproduce a typical commercial processing route in a small scale. The carbides found at each process step were then identified by electron diffraction with energy dispersive spectroscopy in a scanning or transmission electron microscope. After solidification, MC, M{sub 7}C{sub 3} and M{sub 2}C carbides were identified and the last one dissolved during hot compression at 1180 °C. In a subsequent annealing at 870 °C followed by slow cooling, M{sub 6}C and M{sub 23}C{sub 6} were added, while they were dissolved in the following austenitization at 1030 °C. After the final tempering at 520 °C, fine M{sub 23}C{sub 6} precipitated again, thus the final microstructure was the tempered martensite with MC, M{sub 7}C{sub 3} and M{sub 23}C{sub 6} carbide. The transient M{sub 2}C and M{sub 6}C originated from the segregation of Mo and finally disappeared due to attenuated segregation and the consequent thermodynamic instability. - Highlights: • The full processing route of a cold-work tool steel was simulated in a small scale. • The carbides in the tool steel were identified by chemical–crystallographic analyses. • MC, M{sub 7}C{sub 3}, M{sub 2}C, M{sub 6}C and M{sub 23}C{sub 6} carbides were found during the processing of the steel. • M{sub 2}C and M{sub 6}C finally disappeared due to thermodynamic instability.

  18. Method for making hot-pressed fiber-reinforced carbide-graphite composite

    DOE Patents [OSTI]

    Riley, Robert E.; Wallace Sr., Terry C.

    1979-01-01

    A method for the chemical vapor deposition of a uniform coating of tantalum metal on fibers of a woven graphite cloth is described. Several layers of the coated cloth are hot pressed to produce a tantalum carbide-graphite composite having a uniformly dispersed, fine grained tantalum carbide in graphite with compositions in the range of 15 to 40 volume percent tantalum carbide.

  19. Method for forming fibrous silicon carbide insulating material

    DOE Patents [OSTI]

    Wei, G.C.

    1983-10-12

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  20. Method for forming fibrous silicon carbide insulating material

    DOE Patents [OSTI]

    Wei, George C.

    1984-01-01

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  1. Process for forming silicon carbide films and microcomponents

    DOE Patents [OSTI]

    Hamza, A.V.; Balooch, M.; Moalem, M.

    1999-01-19

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

  2. Process for forming silicon carbide films and microcomponents

    DOE Patents [OSTI]

    Hamza, Alex V.; Balooch, Mehdi; Moalem, Mehran

    1999-01-01

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

  3. Process for preparing fine grain titanium carbide powder

    DOE Patents [OSTI]

    Janney, M.A.

    1985-03-12

    A method for preparing finely divided titanium carbide powder in which an organotitanate is reacted with a carbon precursor polymer to provide an admixture of the titanium and the polymer at a molecular level due to a crosslinking reaction between the organotitanate and the polymer. The resulting gel is dried, pyrolyzed to drive off volatile components and provide carbon. The resulting solids are then heated at an elevated temperature to convert the titanium and carbon to high-purity titanium carbide powder in a submicron size range.

  4. Process for preparing fine grain titanium carbide powder

    DOE Patents [OSTI]

    Janey, Mark A.

    1986-01-01

    A method for preparing finely divided titanium carbide powder in which an organotitanate is reacted with a carbon precursor polymer to provide an admixture of the titanium and the polymer at a molecular-level due to a crosslinking reaction between the organotitanate and the polymer. The resulting gel is dried, pyrolyzed to drive off volatile components and provide carbon. The resulting solids are then heated at an elevated temperature to convert the titanium and carbon to high-purity titanium carbide powder in a submicron size range.

  5. Silicon Carbide (SiC) MOSFET | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Building Blocks of Silicon Carbide, a Rising Star Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Building Blocks of Silicon Carbide, a Rising Star In today's fast-paced, high-energy, and highly competitive world of technology, it takes a clear vision and steady execution to leave your competitors in the dust.

  6. Process for synthesizing titanium carbide, titanium nitride and titanium carbonitride

    DOE Patents [OSTI]

    Koc, Rasit; Glatzmaier, Gregory C.

    1995-01-01

    A process for synthesizing titanium carbide, titanium nitride or titanium carbonitride. The process comprises placing particles of titanium, a titanium salt or titanium dioxide within a vessel and providing a carbon-containing atmosphere within the vessel. The vessel is heated to a pyrolysis temperature sufficient to pyrolyze the carbon to thereby coat the particles with a carbon coating. Thereafter, the carbon-coated particles are heated in an inert atmosphere to produce titanium carbide, or in a nitrogen atmosphere to produce titanium nitride or titanium carbonitride, with the heating being of a temperature and time sufficient to produce a substantially complete solid solution.

  7. Process for synthesizing titanium carbide, titanium nitride and titanium carbonitride

    DOE Patents [OSTI]

    Koc, R.; Glatzmaier, G.C.

    1995-05-23

    A process is disclosed for synthesizing titanium carbide, titanium nitride or titanium carbonitride. The process comprises placing particles of titanium, a titanium salt or titanium dioxide within a vessel and providing a carbon-containing atmosphere within the vessel. The vessel is heated to a pyrolysis temperature sufficient to pyrolyze the carbon to thereby coat the particles with a carbon coating. Thereafter, the carbon-coated particles are heated in an inert atmosphere to produce titanium carbide, or in a nitrogen atmosphere to produce titanium nitride or titanium carbonitride, with the heating being of a temperature and time sufficient to produce a substantially complete solid solution.

  8. Computational Approach to Photonic Drilling of Silicon Carbide

    SciTech Connect (OSTI)

    Samant, Anoop N; Daniel, Claus; Chand, Ronald H; Blue, Craig A; Dahotre, Narendra B

    2009-01-01

    The ability of lasers to carry out drilling processes in silicon carbide ceramic was investigated in this study. A JK 701 pulsed Nd:YAG laser was used for drilling through the entire depth of silicon carbide plates of different thicknesses. The laser parameters were varied in different combinations for a well controlled drilling through the entire thickness of the SiC plates. A drilling model incorporating effects of various physical phenomena such as decomposition, evaporation induced recoil pressure, and surface tension was developed. Such comprehensive model was capable of advance prediction of the energy and time required for drilling a hole through any desired depth of material.

  9. Boron-carbide-aluminum and boron-carbide-reactive metal cermets. [B/sub 4/C-Al

    DOE Patents [OSTI]

    Halverson, D.C.; Pyzik, A.J.; Aksay, I.A.

    1985-05-06

    Hard, tough, lighweight boron-carbide-reactive metal composites, particularly boron-carbide-aluminum composites, are produced. These composites have compositions with a plurality of phases. A method is provided, including the steps of wetting and reacting the starting materials, by which the microstructures in the resulting composites can be controllably selected. Starting compositions, reaction temperatures, reaction times, and reaction atmospheres are parameters for controlling the process and resulting compositions. The ceramic phases are homogeneously distributed in the metal phases and adhesive forces at ceramic-metal interfaces are maximized. An initial consolidated step is used to achieve fully dense composites. Microstructures of boron-carbide-aluminum cermets have been produced with modules of rupture exceeding 110 ksi and fracture toughness exceeding 12 ksi..sqrt..in. These composites and methods can be used to form a variety of structural elements.

  10. Filamentation of Beam-Shaped Femtosecond Laser Pulses

    SciTech Connect (OSTI)

    Polynkin, Pavel; Kolesik, Miroslav; Moloney, Jerome

    2010-10-08

    When ultra-intense and ultra-short optical pulses propagate in transparent dielectrics, the dynamic balance between multiple linear and nonlinear effects results in the generation of laser filaments. These peculiar objects have numerous interesting properties and can be potentially used in a variety of applications from remote sensing to the optical pulse compression down to few optical cycles to guiding lightning discharges away from sensitive sites. Materializing this practical potential is not straightforward owing to the complexity of the physical picture of filamentation. In this paper, we discuss recent experiments on using beam shaping as a means of control over the filament formation and dynamics. Two particular beam shapes that we have investigated so far are Bessel and Airy beams. The diffraction-free propagation of femtosecond Bessel beams allows for the creation of extended plasma channels in air. These extended filaments can be used for the generation of energetic optical pulses with the duration in the few-cycle range. In the case of filamentation of femtosecond Airy beams, the self-bending property of these beams allows for the creation of curved filaments. This is a new regime of the intense laser-pulse propagation in which the linear self-bending property of the beam competes against the nonlinear self-channeling. The bent filaments generated by ultra-intense Airy beams emit forward-propagating broadband radiation. Analysis of the spatial and spectral distribution of this emission provides for a valuable tool for analyzing the evolution of the ultra-intense optical pulse along the optical path.

  11. SILICON CARBIDE JOINING. FINAL TOPICAL REPORT

    SciTech Connect (OSTI)

    1998-10-01

    Future energy systems will be required to fire lower-grade fuels and meet higher energy conversion efficiencies than today's systems. The steam cycle used at present is limited to a maximum temperature of 550 C because above that, the stainless steel tubes deform and corrode excessively. To boost efficiency significantly, much higher working fluid temperatures are required. Although high-temperature alloys will suffice for the construction of these components in the near term, the greatest efficiency increases can be reached only with the use of advanced structural ceramics such as silicon carbide (SiC). However, SiC does not melt, but instead sublimes at temperatures over 2000 C. Therefore, it is not possible to join pieces of it through welding, and most brazing compounds have much lower melting points, so the joints lose strength at temperatures much lower than the maximum use temperature of the SiC. Since larger objects such as heat exchangers cannot be easily created from smaller ceramic pieces, the size of the SiC structures that can presently be manufactured are limited by the size of the sintering furnaces (approximately 10 feet for sintered alpha SiC). In addition, repair of the objects will require the use of field-joining techniques. Some success has been had by causing silicon and carbon to react at 1400--1500 C to form SiC in a joint (Rabin, 1995), but these joints contain continuous channels of unreacted silicon, which cause the joints to corrode and creep excessively at temperatures below 1260 C (Breder and Parten, 1996). The objective of this work conducted at the Energy & Environmental Research Center (EERC) is to develop a patentable technique for joining large SiC structures in the field. The key to developing a successful technique will be the use of reactive joining compounds to lower the joining temperature without leaving continuous channels of unreacted compounds that can weaken the joint at temperatures below 1260 C or serve as conduits for

  12. Dynamic Star Formation in the Massive DR21 Filament

    SciTech Connect (OSTI)

    Schneider, N.; Csengeri, T.; Bontemps, S.; Motte, F.; Simon, R.; Hennebelle, P.; Federrath, C.; Klessen, R.; /ZAH, Heidelberg /KIPAC, Menlo Park

    2010-08-25

    The formation of massive stars is a highly complex process in which it is unclear whether the star-forming gas is in global gravitational collapse or an equilibrium state supported by turbulence and/or magnetic fields. By studying one of the most massive and dense star-forming regions in the Galaxy at a distance of less than 3 kpc, i.e. the filament containing the well-known sources DR21 and DR21(OH), we attempt to obtain observational evidence to help us to discriminate between these two views. We use molecular line data from our {sup 13}CO 1 {yields} 0, CS 2 {yields} 1, and N{sub 2}H{sup +} 1 {yields} 0 survey of the Cygnus X region obtained with the FCRAO and CO, CS, HCO{sup +}, N{sub 2}H{sup +}, and H{sub 2}CO data obtained with the IRAM 30m telescope. We observe a complex velocity field and velocity dispersion in the DR21 filament in which regions of the highest column-density, i.e., dense cores, have a lower velocity dispersion than the surrounding gas and velocity gradients that are not (only) due to rotation. Infall signatures in optically thick line profiles of HCO{sup +} and {sup 12}CO are observed along and across the whole DR21 filament. By modelling the observed spectra, we obtain a typical infall speed of {approx}0.6 km s{sup -1} and mass accretion rates of the order of a few 10{sup -3} M{sub {circle_dot}} yr{sup -1} for the two main clumps constituting the filament. These massive clumps (4900 and 3300 M{sub {circle_dot}} at densities of around 10{sup 5} cm{sup -3} within 1 pc diameter) are both gravitationally contracting. The more massive of the clumps, DR21(OH), is connected to a sub-filament, apparently 'falling' onto the clump. This filament runs parallel to the magnetic field. Conclusions. All observed kinematic features in the DR21 filament (velocity field, velocity dispersion, and infall), its filamentary morphology, and the existence of (a) sub-filament(s) can be explained if the DR21 filament was formed by the convergence of flows on large

  13. Decay of helical Kelvin waves on a quantum vortex filament

    SciTech Connect (OSTI)

    Van Gorder, Robert A.

    2014-07-15

    We study the dynamics of helical Kelvin waves moving along a quantum vortex filament driven by a normal fluid flow. We employ the vector form of the quantum local induction approximation (LIA) due to Schwarz. For an isolated filament, this is an adequate approximation to the full Hall-Vinen-Bekarevich-Khalatnikov dynamics. The motion of such Kelvin waves is both translational (along the quantum vortex filament) and rotational (in the plane orthogonal to the reference axis). We first present an exact closed form solution for the motion of these Kelvin waves in the case of a constant amplitude helix. Such solutions exist for a critical wave number and correspond exactly to the Donnelly-Glaberson instability, so perturbations of such solutions either decay to line filaments or blow-up. This leads us to consider helical Kelvin waves which decay to line filaments. Unlike in the case of constant amplitude helical solutions, the dynamics are much more complicated for the decaying helical waves, owing to the fact that the rate of decay of the helical perturbations along the vortex filament is not constant in time. We give an analytical and numerical description of the motion of decaying helical Kelvin waves, from which we are able to ascertain the influence of the physical parameters on the decay, translational motion along the filament, and rotational motion, of these waves (all of which depend nonlinearly on time). One interesting finding is that the helical Kelvin waves do not decay uniformly. Rather, such waves decay slowly for small time scales, and more rapidly for large time scales. The rotational and translational velocity of the Kelvin waves depend strongly on this rate of decay, and we find that the speed of propagation of a helical Kelvin wave along a quantum filament is large for small time while the wave asymptotically slows as it decays. The rotational velocity of such Kelvin waves along the filament will increase over time, asymptotically reaching a finite

  14. Method for homogenizing alloys susceptible to the formation of carbide stringers and alloys prepared thereby

    DOE Patents [OSTI]

    Braski, David N. (Oak Ridge, TN); Leitnaker, James M. (Kingston, TN)

    1980-01-01

    A novel fabrication procedure prevents or eliminates the reprecipitation of segregated metal carbides such as stringers in Ti-modified Hastelloy N and stainless steels to provide a novel alloy having carbides uniformly dispersed throughout the matrix. The fabrication procedure is applicable to other alloys prone to the formation of carbide stringers. The process comprises first annealing the alloy at a temperature above the single phase temperature for sufficient time to completely dissolve carbides and then annealing the single phase alloy for an additional time to prevent the formation of carbide stringers upon subsequent aging or thermomechanical treatment.

  15. Process for preparing metal-carbide-containing microspheres from metal-loaded resin beads

    DOE Patents [OSTI]

    Beatty, Ronald L.

    1976-01-01

    An improved method for treating metal-loaded resin microspheres is described which comprises heating a metal-loaded resin charge in an inert atmosphere at a pre-carbide-forming temperature under such conditions as to produce a microsphere composition having sufficient carbon as to create a substantially continuous carbon matrix and a metal-carbide or an oxide-carbide mixture as a dispersed phase(s) during carbide-forming conditions, and then heating the thus treated charge to a carbide-forming temperature.

  16. Filament capturing with the multimaterial moment-of-fluid method*

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jemison, Matthew; Sussman, Mark; Shashkov, Mikhail

    2015-01-15

    A novel method for capturing two-dimensional, thin, under-resolved material configurations, known as “filaments,” is presented in the context of interface reconstruction. This technique uses a partitioning procedure to detect disconnected regions of material in the advective preimage of a cell (indicative of a filament) and makes use of the existing functionality of the Multimaterial Moment-of-Fluid interface reconstruction method to accurately capture the under-resolved feature, while exactly conserving volume. An algorithm for Adaptive Mesh Refinement in the presence of filaments is developed so that refinement is introduced only near the tips of filaments and where the Moment-of-Fluid reconstruction error is stillmore » large. Comparison to the standard Moment-of-Fluid method is made. As a result, it is demonstrated that using filament capturing at a given resolution yields gains in accuracy comparable to introducing an additional level of mesh refinement at significantly lower cost.« less

  17. TRANSIENT BRIGHTENINGS ASSOCIATED WITH FLUX CANCELLATION ALONG A FILAMENT CHANNEL

    SciTech Connect (OSTI)

    Wang, Y.-M.; Muglach, K. E-mail: karin.muglach@nasa.gov

    2013-02-15

    Filament channels coincide with large-scale polarity inversion lines of the photospheric magnetic field, where flux cancellation continually takes place. High-cadence Solar Dynamics Observatory (SDO) images recorded in He II 30.4 nm and Fe IX 17.1 nm during 2010 August 22 reveal numerous transient brightenings occurring along the edge of a filament channel within a decaying active region, where SDO line-of-sight magnetograms show strong opposite-polarity flux in close contact. The brightenings are elongated along the direction of the filament channel, with linear extents of several arcseconds, and typically last a few minutes; they sometimes have the form of multiple two-sided ejections with speeds on the order of 100 km s{sup -1}. Remarkably, some of the brightenings rapidly develop into larger scale events, forming sheetlike structures that are eventually torn apart by the diverging flows in the filament channel and ejected in opposite directions. We interpret the brightenings as resulting from reconnections among filament-channel field lines having one footpoint located in the region of canceling flux. In some cases, the flow patterns that develop in the channel may bring successive horizontal loops together and cause a cascade to larger scales.

  18. Tungsten-yttria carbide coating for conveying copper

    DOE Patents [OSTI]

    Rothman, Albert J.

    1993-01-01

    A method is provided for providing a carbided-tungsten-yttria coating on the interior surface of a copper vapor laser. The surface serves as a wick for the condensation of liquid copper to return the condensate to the interior of the laser for revolatilization.

  19. Nuclear breeder reactor fuel element with silicon carbide getter

    DOE Patents [OSTI]

    Christiansen, David W. (Kennewick, WA); Karnesky, Richard A. (Richland, WA)

    1987-01-01

    An improved cesium getter 28 is provided in a breeder reactor fuel element or pin in the form of an extended surface area, low density element formed in one embodiment as a helically wound foil 30 located with silicon carbide, and located at the upper end of the fertile material upper blanket 20.

  20. Method of deposition of silicon carbide layers on substrates

    DOE Patents [OSTI]

    Angelini, P.; DeVore, C.E.; Lackey, W.J.; Blanco, R.E.; Stinton, D.P.

    1982-03-19

    A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at 800 to 1050/sup 0/C when the substrates have been confined within a suitable coating environment.

  1. Raman spectroscopic characterization of the core-rim structure in reaction bonded boron carbide ceramics

    SciTech Connect (OSTI)

    Jannotti, Phillip; Subhash, Ghatu; Zheng, James Q.; Halls, Virginia; Karandikar, Prashant G.; Salamone, S.; Aghajanian, Michael K.

    2015-01-26

    Raman spectroscopy was used to characterize the microstructure of reaction bonded boron carbide ceramics. Compositional and structural gradation in the silicon-doped boron carbide phase (rim), which develops around the parent boron carbide region (core) due to the reaction between silicon and boron carbide, was evaluated using changes in Raman peak position and intensity. Peak shifting and intensity variation from the core to the rim region was attributed to changes in the boron carbide crystal structure based on experimental Raman observations and ab initio calculations reported in literature. The results were consistent with compositional analysis determined by energy dispersive spectroscopy. The Raman analysis revealed the substitution of silicon atoms first into the linear 3-atom chain, and then into icosahedral units of the boron carbide structure. Thus, micro-Raman spectroscopy provided a non-destructive means of identifying the preferential positions of Si atoms in the boron carbide lattice.

  2. Effect of filament supports on emissive probe measurements

    SciTech Connect (OSTI)

    Wang, X.; Howes, C. T.; Horanyi, M.; Robertson, S.

    2013-01-15

    We have constructed an emissive probe with a thin tungsten filament spot-welded across two nickel wires insulated with ceramic paint. We show that the ceramic supports covering the nickel wires have a large effect on the potential measurements in low-density plasmas. It is found that the potential measured by the emissive probe is more negative than the potential derived from a Langmuir probe current-voltage (I-V) characteristic curve when the plasma density is so low that the emitting filament remains immersed in the sheaths of the ceramic supports. The length of the filament L needs to be larger than about 2 Debye lengths (L > 2{lambda}{sub De}) in order to avoid the influence of the ceramic supports and to achieve reliable plasma potential measurements using emissive probes.

  3. Investigation on collisions of filament pairs in dielectric barrier discharge

    SciTech Connect (OSTI)

    Dong, Lifang; Zhang, Chao; Li, Ben; Zhang, Xinpu; He, Yafeng; Li, Xuechen; Hebei Key Laboratory of Optic-electronic Information Materials, Baoding 071002

    2013-12-15

    Collisions of filament pairs in a hexagonal superlattice pattern in dielectric barrier discharge are investigated on different timescales. In the evolution of the pattern, the space scale of each hexagon cell decreases with the increasing voltage. The duration of one collision is seven half voltage cycles at least. Two stable orientations of a pair are approximately perpendicular to each other and the orientational changes occurring during the entire colliding process should be a multiple of 30. The time interval between two consecutive collisions decreases with the increasing voltage. The distance between the paired spots decreases nonmonotonically. Based on the discharge order of the pattern, it is inferred that the collision should be the interaction between a discharging filament and the surface charges deposited by another discharged filament, and the nonmonotonic decrease of distance D is explained.

  4. Dual-frequency terahertz emission from splitting filaments induced by lens tilting in air

    SciTech Connect (OSTI)

    Zhang, Zhelin; Chen, Yanping Yang, Liu; Yuan, Xiaohui; Liu, Feng; Chen, Min; Xu, Jianqiu; Zhang, Jie; Sheng, Zhengming

    2014-09-08

    Dual-frequency terahertz radiation from air-plasma filaments produced with two-color lasers in air has been demonstrated experimentally. When a focusing lens is tilted for a few degrees, it is shown that the laser filament evolves from a single one to two sub-filaments. Two independent terahertz sources emitted from the sub-filaments with different frequencies and polarizations are identified, where the frequency of terahertz waves from the trailing sub-filament is higher than that from the leading sub-filament.

  5. INSIGHTS INTO FILAMENT ERUPTION ONSET FROM SOLAR DYNAMICS OBSERVATORY OBSERVATIONS

    SciTech Connect (OSTI)

    Sterling, Alphonse C.; Moore, Ronald L.; Freeland, Samuel L. E-mail: ron.moore@nasa.gov

    2011-04-10

    We examine the buildup to and onset of an active region filament confined eruption of 2010 May 12, using EUV imaging data from the Solar Dynamics Observatory (SDO) Atmospheric Imaging Array and line-of-sight magnetic data from the SDO Helioseismic and Magnetic Imager. Over the hour preceding eruption the filament undergoes a slow rise averaging {approx}3 km s{sup -1}, with a step-like trajectory. Accompanying a final rise step {approx}20 minutes prior to eruption is a transient preflare brightening, occurring on loops rooted near the site where magnetic field had canceled over the previous 20 hr. Flow-type motions of the filament are relatively smooth with speeds {approx}50 km s{sup -1} prior to the preflare brightening and appear more helical, with speeds {approx}50-100 km s{sup -1}, after that brightening. After a final plateau in the filament's rise, its rapid eruption begins, and concurrently an outer shell 'cocoon' of the filament material increases in emission in hot EUV lines, consistent with heating in a newly formed magnetic flux rope. The main flare brightenings start {approx}5 minutes after eruption onset. The main flare arcade begins between the legs of an envelope-arcade loop that is nearly orthogonal to the filament, suggesting that the flare results from reconnection among the legs of that loop. This progress of events is broadly consistent with flux cancellation leading to formation of a helical flux rope that subsequently erupts due to onset of a magnetic instability and/or runaway tether cutting.

  6. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

    SciTech Connect (OSTI)

    Katoh, Yutai; Koyanagi, Takaaki; Kiggans, Jim; Cetiner, Nesrin; McDuffee, Joel

    2014-09-01

    Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

  7. Infrared study on room-temperature atomic layer deposition of HfO{sub 2} using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents

    SciTech Connect (OSTI)

    Kanomata, Kensaku [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510, Japan and Japan Society for the Promotion of Science, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Ohba, Hisashi; Pungboon Pansila, P.; Ahmmad, Bashir; Kubota, Shigeru; Hirahara, Kazuhiro; Hirose, Fumihiko, E-mail: fhirose@yz.yamagata-u.ac.jp [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan)

    2015-01-01

    Room-temperature atomic layer deposition (ALD) of HfO{sub 2} was examined using tetrakis (ethylmethylamino)hafnium (TEMAH) and remote plasma-excited water and oxygen. A growth rate of 0.26?nm/cycle at room temperature was achieved, and the TEMAH adsorption and its oxidization on HfO{sub 2} were investigated by multiple internal reflection infrared absorption spectroscopy. It was observed that saturated adsorption of TEMAH occurs at exposures of ?1??10{sup 5}?L (1 L?=?1??10{sup ?6} Torr s) at room temperature, and the use of remote plasma-excited water and oxygen vapor is effective in oxidizing the TEMAH molecules on the HfO{sub 2} surface, to produce OH sites. The infrared study suggested that HfOH plays a role as an adsorption site for TEMAH. The reaction mechanism of room temperature HfO{sub 2} ALD is discussed in this paper.

  8. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    SciTech Connect (OSTI)

    DR. DENNIS NAGLE; DR. DAJIE ZHANG

    2009-03-26

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial Si

  9. Alignments of galaxies within cosmic filaments from SDSS DR7

    SciTech Connect (OSTI)

    Zhang, Youcai; Yang, Xiaohu; Wang, Huiyuan; Wang, Lei; Mo, H. J.; Van den Bosch, Frank C. E-mail: xyang@sjtu.edu.cn

    2013-12-20

    Using a sample of galaxy groups selected from the Sloan Digital Sky Survey Data Release 7, we examine the alignment between the orientation of galaxies and their surrounding large-scale structure in the context of the cosmic web. The latter is quantified using the large-scale tidal field, reconstructed from the data using galaxy groups above a certain mass threshold. We find that the major axes of galaxies in filaments tend to be preferentially aligned with the directions of the filaments, while galaxies in sheets have their major axes preferentially aligned parallel to the plane of the sheets. The strength of this alignment signal is strongest for red, central galaxies, and in good agreement with that of dark matter halos in N-body simulations. This suggests that red, central galaxies are well aligned with their host halos, in quantitative agreement with previous studies based on the spatial distribution of satellite galaxies. There is a luminosity and mass dependence that brighter and more massive galaxies in filaments and sheets have stronger alignment signals. We also find that the orientation of galaxies is aligned with the eigenvector associated with the smallest eigenvalue of the tidal tensor. These observational results indicate that galaxy formation is affected by large-scale environments and strongly suggest that galaxies are aligned with each other over scales comparable to those of sheets and filaments in the cosmic web.

  10. Diamond-Silicon Carbide Composite And Method For Preparation Thereof

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2005-09-06

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  11. Protective coating for alumina-silicon carbide whisker composites

    DOE Patents [OSTI]

    Tiegs, Terry N.

    1989-01-01

    Ceramic composites formed of an alumina matrix reinforced with silicon carbide whiskers homogenously dispersed therein are provided with a protective coating for preventing fracture strength degradation of the composite by oxidation during exposure to high temperatures in oxygen-containing atmospheres. The coating prevents oxidation of the silicon carbide whiskers within the matrix by sealing off the exterior of the matrix so as to prevent oxygen transport into the interior of the matrix. The coating is formed of mullite or mullite plus silicon oxide and alumina and is formed in place by heating the composite in air to a temperature greater than 1200.degree. C. This coating is less than about 100 microns thick and adequately protects the underlying composite from fracture strength degradation due to oxidation.

  12. Modulational and filamentational instabilities of a monochromatic Langmuir pump wave in quantum plasmas

    SciTech Connect (OSTI)

    Sayed, F.; Tyshetskiy, Yu.; Vladimirov, S. V.; Ishihara, O.

    2015-05-15

    The modulational and filamentational instabilities of a monochromatic Langmuir pump wave are investigated for the case of collisionless quantum plasmas, using renormalized quantum linear and nonlinear plasma polarization responses. We obtain the quantum-corrected dispersion equation for the modulational and filamentational instabilities growth rates. It is demonstrated that the quantum effect suppresses the growth rates of the modulational and filamentational instabilities.

  13. Process for growing silicon carbide whiskers by undercooling

    DOE Patents [OSTI]

    Shalek, P.D.

    1987-10-27

    A method of growing silicon carbide whiskers, especially in the [beta] form, is disclosed using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection. 3 figs.

  14. Process for growing silicon carbide whiskers by undercooling

    DOE Patents [OSTI]

    Shalek, Peter D. (Los Alamos, NM)

    1987-01-01

    A method of growing silicon carbide whiskers, especially in the .beta. form, using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection.

  15. Method for removing oxide contamination from silicon carbide powders

    DOE Patents [OSTI]

    Brynestad, J.; Bamberger, C.E.

    1984-08-01

    The described invention is directed to a method for removing oxide contamination in the form of oxygen-containing compounds such as SiO/sub 2/ and B/sub 2/O/sub 3/ from a charge of finely divided silicon carbide. The silicon carbide charge is contacted with a stream of hydrogen fluoride mixed with an inert gas carrier such as argon at a temperature in the range of about 200/sup 0/ to 650/sup 0/C. The oxides in the charge react with the heated hydrogen fluoride to form volatile gaseous fluorides such as SiF/sub 4/ and BF/sub 3/ which pass through the charge along with unreacted hydrogen fluoride and the carrier gas. Any residual gaseous reaction products and hydrogen fluoride remaining in the charge are removed by contacting the charge with the stream of inert gas which also cools the powder to room temperature. The removal of the oxygen contamination by practicing the present method provides silicon carbide powders with desirable pressing and sintering characteristics. 1 tab.

  16. Ceramic composites reinforced with modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N.; Lindemer, Terrence B.

    1990-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  17. Tunable carbon nanotube-tungsten carbide nanoparticles heterostructures by vapor deposition

    SciTech Connect (OSTI)

    Xia, Min; Guo, Hongyan; Ge, Changchun; Yan, Qingzhi Lang, Shaoting

    2014-05-14

    A simple, versatile route for the synthesis of carbon nanotube (CNT)-tungsten carbide nanoparticles heterostructures was set up via vapor deposition process. For the first time, amorphous CNTs (?-CNTs) were used to immobilized tungsten carbide nanoparticles. By adjusting the synthesis and annealing temperature, ?-CNTs/amorphous tungsten carbide, ?-CNTs/W{sub 2}C, and CNTs/W{sub 2}C/WC heterostructures were prepared. This approach provides an efficient method to attach other metal carbides and other nanoparticles to carbon nanotubes with tunable properties.

  18. Synthesis of uranium nitride and uranium carbide powder by carbothermic reduction

    SciTech Connect (OSTI)

    Dunwoody, J.T.; Stanek, C.R.; McClellan, K.J.; Voit, S.L.; Volz, H.M.; Hickman, R.R.

    2007-07-01

    Uranium nitride and uranium carbide are being considered as high burnup fuels in next generation nuclear reactors and accelerated driven systems for the transmutation of nuclear waste. The same characteristics that make nitrides and carbides candidates for these applications (i.e. favorable thermal properties, mutual solubility of nitrides, etc.), also make these compositions candidate fuels for space nuclear reactors. In this paper, we discuss the synthesis and characterization of depleted uranium nitride and carbide for a space nuclear reactor program. Importantly, this project emphasized that to synthesize high quality uranium nitride and carbide, it is necessary to understand the exact stoichiometry of the oxide feedstock. (authors)

  19. In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

    SciTech Connect (OSTI)

    Fujii, Takashi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, Ichiro

    2011-05-23

    An in situ transmission electron microscopy (TEM) analysis of a solid electrolyte, Cu-GeS, during resistance switching is reported. Real-time observations of the filament formation and disappearance process were performed in the TEM instrument and the conductive-filament-formation model was confirmed experimentally. Narrow conductive filaments were formed corresponding to resistance switching from high- to low-resistance states. When the resistance changed to high-resistance state, the filament disappeared. It was also confirmed by use of selected area diffractometry and energy-dispersive x-ray spectroscopy that the conductive filament was made of nanocrystals composed mainly of Cu.

  20. Mixed two-stream filamentation modes in a collisional plasma

    SciTech Connect (OSTI)

    Bret, A.; Deutsch, C.

    2005-08-15

    The effects of collisions on the most unstable modes encountered in relativistic electron-beam plasma interaction are investigated. These modes are a mix between two-stream and filamentation modes. It is analytically proven that as long as the effective collision frequency {nu} is much smaller than the plasma frequency {omega}{sub p}, the maximum growth rate is just reduced, and eventually canceled, by {nu} when collisions are accounted for. An analytic model for the fluid case is developed.

  1. XUV laser-plasma source based on solid Ar filament

    SciTech Connect (OSTI)

    Peth, Christian; Kalinin, Anton; Barkusky, Frank; Mann, Klaus; Toennies, J. Peter; Rusin, Lev Yu

    2007-10-15

    We present a laser driven soft x-ray source based on a novel solid argon filament. The continuously flowing micron-sized filament (diameter {approx}56 {mu}m, flow speed {approx}5 mm/s) was used as a laser target in order to generate a plasma source of high brightness in the ''water window'' (2.2-4.4 nm) spectral range. The emission properties of the source were characterized in detail with respect to crucial parameters such as positional and energy stability using an extreme ultraviolet (XUV) sensitive pinhole camera and an XUV spectrometer. The results are compared with an argon plasma based on a gas puff target operated under the same experimental conditions showing an increase of the brilliance by a factor of 84. By changing the capillary geometry from a constant diameter to a convergent shape the flow speed of the filament was significantly increased up to 250 mm/s, facilitating the operation at higher repetition rates.

  2. Simultaneous transverse oscillations of a prominence and a filament and longitudinal oscillation of another filament induced by a single shock wave

    SciTech Connect (OSTI)

    Shen, Yuandeng; Liu, Ying D.; Chen, P. F.; Ichimoto, Kiyoshi

    2014-11-10

    We present the first stereoscopic and Doppler observations of simultaneous transverse oscillations of a prominence and a filament and longitudinal oscillation of another filament launched by a single shock wave. Using H? Doppler observations, we derive the three-dimensional oscillation velocities at different heights along the prominence axis. The results indicate that the prominence has a larger oscillation amplitude and damping time at higher altitude, but the periods at different heights are the same (i.e., 13.5 minutes). This suggests that the prominence oscillates like a linear vertical rigid body with one end anchored on the Sun. One of the filaments shows weak transverse oscillation after the passing of the shock, which is possibly due to the low altitude of the filament and the weakening (due to reflection) of the shock wave before the interaction. Large-amplitude longitudinal oscillation is observed in the other filament after the passing of the shock wave. The velocity amplitude and period are about 26.8 km s{sup 1} and 80.3 minutes, respectively. We propose that the orientation of a filament or prominence relative to the normal vector of the incoming shock should be an important factor for launching transverse or longitudinal filament oscillations. In addition, the restoring forces of the transverse prominence are most likely due to the coupling of gravity and magnetic tension of the supporting magnetic field, while that for the longitudinal filament oscillation is probably the resultant force of gravity and magnetic pressure.

  3. Irradiation and annealing of p-type silicon carbide

    SciTech Connect (OSTI)

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor'eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ? 1.5 10{sup 18} cm{sup ?3} occurs at an irradiation dose of ?1.1 10{sup 16} cm{sup ?2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ?1000C. The conductivity is almost completely restored at T ? 1200C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  4. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOE Patents [OSTI]

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  5. Process for preparing metal-carbide-containing microspheres from metal-loaded resin beads

    DOE Patents [OSTI]

    Beatty, Ronald L.

    1977-01-01

    An improved process for producing porous spheroidal particles consisting of a metal carbide phase dispersed within a carbon matrix is described. According to the invention metal-loaded ion-exchange resin microspheres which have been carbonized are coated with a buffer carbon layer prior to conversion of the oxide to carbide in order to maintain porosity and avoid other adverse sintering effects.

  6. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    SciTech Connect (OSTI)

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  7. Dynamic consolidation of aluminum-silicon carbide composites

    SciTech Connect (OSTI)

    Rabin, B.H.; Korth, G.E.; Williamson, R.L.

    1990-01-01

    Dynamic consolidation was investigated as a potential method for producing P/M metal matrix composites. In this study, 2124 aluminum powders were mixed with silicon carbide particulate and consolidated using explosives. Numerical simulations were performed to provide insight into the consolidation process and to aid in the selection of experimental conditions. The microstructure of the as-consolidated product was dependent upon processing variables. Careful control of the shock parameters allowed full density, crack free composites to be achieved in cylindrical geometries. Although full density was obtained, low fracture strengths suggested a lack of interparticle bonding, probably resulting from the limited ability to redistribute surface oxides during consolidation. 10 refs., 9 figs.

  8. Method of fabricating silicon carbide coatings on graphite surfaces

    DOE Patents [OSTI]

    Varacalle, D.J. Jr.; Herman, H.; Burchell, T.D.

    1994-07-26

    The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1,600 C which transforms the coating to silicon carbide. 3 figs.

  9. PROCESS OF COATING GRAPHITE WITH NIOBIUM-TITANIUM CARBIDE

    DOE Patents [OSTI]

    Halden, F.A.; Smiley, W.D.; Hruz, F.M.

    1961-07-01

    A process of coating graphite with niobium - titanium carbide is described. It is found that the addition of more than ten percent by weight of titanium to niobium results in much greater wetting of the graphite by the niobium and a much more adherent coating. The preferred embodiment comprises contacting the graphite with a powdered alloy or mixture, degassing simultaneously the powder and the graphite, and then heating them to a high temperature to cause melting, wetting, spreading, and carburization of the niobium-titanium powder.

  10. Process for preparing fine grain silicon carbide powder

    DOE Patents [OSTI]

    Wei, G.C.

    Finely divided silicon carbide powder is obtained by mixing colloidal silica and unreacted phenolic resin in either acetone or methanol, evaporating solvent from the obtained solution to form a gel, drying and calcining the gel to polymerize the phenolic resin therein, pyrolyzing the dried and calcined gel at a temperature in the range of 500 to 1000/sup 0/C, and reacting silicon and carbon in the pyrolyzed gel at a temperature in the range of 1550 to 1700/sup 0/C to form the powder.

  11. Method of fabricating silicon carbide coatings on graphite surfaces

    DOE Patents [OSTI]

    Varacalle, Jr., Dominic J.; Herman, Herbert; Burchell, Timothy D.

    1994-01-01

    The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1600.degree.C. which transforms the coating to silicon carbide.

  12. CARMA LARGE AREA STAR FORMATION SURVEY: OBSERVATIONAL ANALYSIS OF FILAMENTS IN THE SERPENS SOUTH MOLECULAR CLOUD

    SciTech Connect (OSTI)

    Fernndez-Lpez, M.; Looney, L.; Lee, K.; Segura-Cox, D.; Arce, H. G.; Plunkett, A.; Mundy, L. G.; Storm, S.; Teuben, P. J.; Pound, M.; Isella, A.; Kauffmann, J.; Tobin, J. J.; Rosolowsky, E.; Kwon, W.; Ostriker, E.; Tassis, K.; Shirley, Y. L.

    2014-08-01

    We present the N{sub 2}H{sup +} (J = 1 ? 0) map of the Serpens South molecular cloud obtained as part of the CARMA Large Area Star Formation Survey. The observations cover 250 arcmin{sup 2} and fully sample structures from 3000 AU to 3pc with a velocity resolution of 0.16kms{sup 1}, and they can be used to constrain the origin and evolution of molecular cloud filaments. The spatial distribution of the N{sub 2}H{sup +} emission is characterized by long filaments that resemble those observed in the dust continuum emission by Herschel. However, the gas filaments are typically narrower such that, in some cases, two or three quasi-parallel N{sub 2}H{sup +} filaments comprise a single observed dust continuum filament. The difference between the dust and gas filament widths casts doubt on Herschel ability to resolve the Serpens South filaments. Some molecular filaments show velocity gradients along their major axis, and two are characterized by a steep velocity gradient in the direction perpendicular to the filament axis. The observed velocity gradient along one of these filaments was previously postulated as evidence for mass infall toward the central cluster, but these kind of gradients can be interpreted as projection of large-scale turbulence.

  13. Observations and implications of large-amplitude longitudinal oscillations in a solar filament

    SciTech Connect (OSTI)

    Luna, M.; Knizhnik, K.; Muglach, K.; Karpen, J.; Gilbert, H.; Kucera, T. A.; Uritsky, V.

    2014-04-10

    On 2010 August 20, an energetic disturbance triggered large-amplitude longitudinal oscillations in a nearby filament. The triggering mechanism appears to be episodic jets connecting the energetic event with the filament threads. In the present work, we analyze this periodic motion in a large fraction of the filament to characterize the underlying physics of the oscillation as well as the filament properties. The results support our previous theoretical conclusions that the restoring force of large-amplitude longitudinal oscillations is solar gravity, and the damping mechanism is the ongoing accumulation of mass onto the oscillating threads. Based on our previous work, we used the fitted parameters to determine the magnitude and radius of curvature of the dipped magnetic field along the filament, as well as the mass accretion rate onto the filament threads. These derived properties are nearly uniform along the filament, indicating a remarkable degree of cohesiveness throughout the filament channel. Moreover, the estimated mass accretion rate implies that the footpoint heating responsible for the thread formation, according to the thermal nonequilibrium model, agrees with previous coronal heating estimates. We estimate the magnitude of the energy released in the nearby event by studying the dynamic response of the filament threads, and discuss the implications of our study for filament structure and heating.

  14. STUDYING INTERCLUSTER GALAXY FILAMENTS THROUGH STACKING gmBCG GALAXY CLUSTER PAIRS

    SciTech Connect (OSTI)

    Zhang Yuanyuan; Dietrich, Joerg P.; McKay, Timothy A.; Nguyen, Alex T. Q.; Sheldon, Erin S.

    2013-08-20

    We present a method to study the photometric properties of galaxies in filaments by stacking the galaxy populations between pairs of galaxy clusters. Using Sloan Digital Sky Survey data, this method can detect the intercluster filament galaxy overdensity with a significance of {approx}5{sigma} out to z = 0.40. Using this approach, we study the g - r color and luminosity distribution of filament galaxies as a function of redshift. Consistent with expectation, filament galaxies are bimodal in their color distribution and contain a larger blue galaxy population than clusters. Filament galaxies are also generally fainter than cluster galaxies. More interestingly, the observed filament population seems to show redshift evolution at 0.12 < z < 0.40: the blue galaxy fraction has a trend to increase at higher redshift; such evolution is parallel to the ''Butcher-Oemler effect'' of galaxy clusters. We test the dependence of the observed filament density on the richness of the cluster pair: richer clusters are connected by higher density filaments. We also test the spatial dependence of filament galaxy overdensity: this quantity decreases when moving away from the intercluster axis between a cluster pair. This method provides an economical way to probe the photometric properties of filament galaxies and should prove useful for upcoming projects like the Dark Energy Survey.

  15. Confined partial filament eruption and its reformation within a stable magnetic flux rope

    SciTech Connect (OSTI)

    Joshi, Navin Chandra; Kayshap, Pradeep; Uddin, Wahab; Srivastava, Abhishek K.; Dwivedi, B. N.; Filippov, Boris; Chandra, Ramesh; Choudhary, Debi Prasad E-mail: njoshi98@gmail.com

    2014-05-20

    We present observations of a confined partial eruption of a filament on 2012 August 4, which restores its initial shape within ?2 hr after eruption. From the Global Oscillation Network Group H? observations, we find that the filament plasma turns into dynamic motion at around 11:20 UT from the middle part of the filament toward the northwest direction with an average speed of ?105 km s{sup 1}. A little brightening underneath the filament possibly shows the signature of low-altitude reconnection below the filament eruptive part. In Solar Dynamics Observatory/Atmospheric Imaging Assembly 171 images, we observe an activation of right-handed helically twisted magnetic flux rope that contains the filament material and confines it during its dynamical motion. The motion of cool filament plasma stops after traveling a distance of ?215 Mm toward the northwest from the point of eruption. The plasma moves partly toward the right foot point of the flux rope, while most of the plasma returns after 12:20 UT toward the left foot point with an average speed of ?60 km s{sup 1} to reform the filament within the same stable magnetic structure. On the basis of the filament internal fine structure and its position relative to the photospheric magnetic fields, we find filament chirality to be sinistral, while the activated enveloping flux rope shows a clear right-handed twist. Thus, this dynamic event is an apparent example of one-to-one correspondence between the filament chirality (sinistral) and the enveloping flux rope helicity (positive). From the coronal magnetic field decay index, n, calculation near the flux rope axis, it is evident that the whole filament axis lies within the domain of stability (i.e., n < 1), which provides the filament stability despite strong disturbances at its eastern foot point.

  16. Replacing precious metals with carbide catalysts for hydrogenation reactions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ruijun, Hou; Chen, Jingguang G.; Chang, Kuan; Wang, Tiefeng

    2015-03-03

    Molybdenum carbide (Mo₂C and Ni/Mo₂C) catalysts were compared with Pd/SiO₂ for the hydrogenation of several diene molecules, 1,3- butadiene, 1,3- and 1,4-cyclohexadiene (CHD). Compared to Pd/SiO₂, Mo₂C showed similar hydrogenation rate for 1,3-butadiene and 1,3-CHD and even higher rate for 1,4-CHD, but with significant deactivation rate for 1,3-CHD hydrogenation. However, the hydrogenation activity of Mo₂C could be completely regenerated by H₂ treatment at 723 K for the three molecules. The Ni modified Mo₂C catalysts retained similar activity for 1,3-butadiene hydrogenation with significantly enhanced selectivity for 1-butene production. The 1-butene selectivity increased with increasing Ni loading below 15%. Among the Nimore » modified Mo₂C catalysts, 8.6%Ni/Mo₂C showed the highest selectivity to 1-butene, which was even higher selectivity than that over Pd/SiO₂. Compared to Pd/SiO₂, both Mo₂C and Ni/Mo₂C showed combined advantages in hydrogenation activity and catalyst cost reduction, demonstrating the potential to use less expensive carbide catalysts to replace precious metals for hydrogenation reactions.« less

  17. High capacitance of coarse-grained carbide derived carbon electrodes

    SciTech Connect (OSTI)

    Dyatkin, Boris; Gogotsi, Oleksiy; Malinovskiy, Bohdan; Zozulya, Yuliya; Simon, Patrice; Gogotsi, Yury

    2016-01-01

    Here, we report exceptional electrochemical properties of supercapacitor electrodes composed of large, granular carbide-derived carbon (CDC) particles. We synthesized 70–250 μm sized particles with high surface area and a narrow pore size distribution, using a titanium carbide (TiC) precursor. Electrochemical cycling of these coarse-grained powders defied conventional wisdom that a small particle size is strictly required for supercapacitor electrodes and allowed high charge storage densities, rapid transport, and good rate handling ability. Moreover, the material showcased capacitance above 100 F g-1 at sweep rates as high as 250 mV s-1 in organic electrolyte. 250–1000 micron thick dense CDC films with up to 80 mg cm-2 loading showed superior areal capacitances. The material significantly outperformed its activated carbon counterpart in organic electrolytes and ionic liquids. Furthermore, large internal/external surface ratio of coarse-grained carbons allowed the resulting electrodes to maintain high electrochemical stability up to 3.1 V in ionic liquid electrolyte. In addition to presenting novel insights into the electrosorption process, these coarse-grained carbons offer a pathway to low-cost, high-performance implementation of supercapacitors in automotive and grid-storage applications.

  18. Replacing precious metals with carbide catalysts for hydrogenation reactions

    SciTech Connect (OSTI)

    Ruijun, Hou; Chen, Jingguang G.; Chang, Kuan; Wang, Tiefeng

    2015-03-03

    Molybdenum carbide (Mo₂C and Ni/Mo₂C) catalysts were compared with Pd/SiO₂ for the hydrogenation of several diene molecules, 1,3- butadiene, 1,3- and 1,4-cyclohexadiene (CHD). Compared to Pd/SiO₂, Mo₂C showed similar hydrogenation rate for 1,3-butadiene and 1,3-CHD and even higher rate for 1,4-CHD, but with significant deactivation rate for 1,3-CHD hydrogenation. However, the hydrogenation activity of Mo₂C could be completely regenerated by H₂ treatment at 723 K for the three molecules. The Ni modified Mo₂C catalysts retained similar activity for 1,3-butadiene hydrogenation with significantly enhanced selectivity for 1-butene production. The 1-butene selectivity increased with increasing Ni loading below 15%. Among the Ni modified Mo₂C catalysts, 8.6%Ni/Mo₂C showed the highest selectivity to 1-butene, which was even higher selectivity than that over Pd/SiO₂. Compared to Pd/SiO₂, both Mo₂C and Ni/Mo₂C showed combined advantages in hydrogenation activity and catalyst cost reduction, demonstrating the potential to use less expensive carbide catalysts to replace precious metals for hydrogenation reactions.

  19. High capacitance of coarse-grained carbide derived carbon electrodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dyatkin, Boris; Gogotsi, Oleksiy; Malinovskiy, Bohdan; Zozulya, Yuliya; Simon, Patrice; Gogotsi, Yury

    2016-01-01

    Here, we report exceptional electrochemical properties of supercapacitor electrodes composed of large, granular carbide-derived carbon (CDC) particles. We synthesized 70–250 μm sized particles with high surface area and a narrow pore size distribution, using a titanium carbide (TiC) precursor. Electrochemical cycling of these coarse-grained powders defied conventional wisdom that a small particle size is strictly required for supercapacitor electrodes and allowed high charge storage densities, rapid transport, and good rate handling ability. Moreover, the material showcased capacitance above 100 F g-1 at sweep rates as high as 250 mV s-1 in organic electrolyte. 250–1000 micron thick dense CDC films withmore » up to 80 mg cm-2 loading showed superior areal capacitances. The material significantly outperformed its activated carbon counterpart in organic electrolytes and ionic liquids. Furthermore, large internal/external surface ratio of coarse-grained carbons allowed the resulting electrodes to maintain high electrochemical stability up to 3.1 V in ionic liquid electrolyte. In addition to presenting novel insights into the electrosorption process, these coarse-grained carbons offer a pathway to low-cost, high-performance implementation of supercapacitors in automotive and grid-storage applications.« less

  20. Replacing precious metals with carbide catalysts for hydrogenation reactions

    SciTech Connect (OSTI)

    Ruijun, Hou; Chen, Jingguang G.; Chang, Kuan; Wang, Tiefeng

    2015-03-03

    Molybdenum carbide (Mo?C and Ni/Mo?C) catalysts were compared with Pd/SiO? for the hydrogenation of several diene molecules, 1,3- butadiene, 1,3- and 1,4-cyclohexadiene (CHD). Compared to Pd/SiO?, Mo?C showed similar hydrogenation rate for 1,3-butadiene and 1,3-CHD and even higher rate for 1,4-CHD, but with significant deactivation rate for 1,3-CHD hydrogenation. However, the hydrogenation activity of Mo?C could be completely regenerated by H? treatment at 723 K for the three molecules. The Ni modified Mo?C catalysts retained similar activity for 1,3-butadiene hydrogenation with significantly enhanced selectivity for 1-butene production. The 1-butene selectivity increased with increasing Ni loading below 15%. Among the Ni modified Mo?C catalysts, 8.6%Ni/Mo?C showed the highest selectivity to 1-butene, which was even higher selectivity than that over Pd/SiO?. Compared to Pd/SiO?, both Mo?C and Ni/Mo?C showed combined advantages in hydrogenation activity and catalyst cost reduction, demonstrating the potential to use less expensive carbide catalysts to replace precious metals for hydrogenation reactions.

  1. Detection and characterization of multi-filament evolution during resistive switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.

    2014-08-05

    We present resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes, and develop a geometrically defined equivalent circuit to separate the individual resistances and powers dissipated in each filament. Using these resolved values, we compare the individual switching curves of each filament and demonstrate that the switching data of each filament collapse onto a single switching curve determined by the analytical steady-state resistive switching solution for filamentary switching. Analyzing our results in terms of this solution, we determine the switching temperature, heat flow, conductivity, and time evolving areas of each filament during resistive switching. Finally, we discussmore » operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.« less

  2. Filamentation of femtosecond laser radiation with a non-Gaussian transverse spatial profile

    SciTech Connect (OSTI)

    Biryukov, A A; Panov, N A; Volkov, M V; Uryupina, D S; Volkov, Roman V; Kosareva, O G; Savel'ev-Trofimov, Andrei B

    2011-11-30

    The filamentation of a femtosecond laser pulse with a non-Gaussian transverse intensity profile has been studied experimentally and by numerical simulation. The results demonstrate that the distance to the filamentation region can be evaluated using the Marburger formula in which the critical power of self-focusing at a beam quality factor M{sup 2} exceeds that for a Gaussian beam by a factor of (M{sup 2}){sup 2}. The characteristics of the filament resulting from self-focusing depend little on the beam quality factor: both the filament energy and diameter coincide. If the beam is passed through an aperture, a filament forms on a diffraction ring, and its parameters coincide with those of a filament formed with no slit (provided the initial pulse parameters coincide).

  3. Velocity scaling for filament motion in scrape-off layer plasmas

    SciTech Connect (OSTI)

    Kube, R.; Garcia, O. E.

    2011-10-15

    The velocity scaling for isolated plasma filaments in non-uniformly magnetized plasmas with respect to filament amplitude and cross-field size has been investigated by means of numerical simulations. The model includes electric currents due to magnetic gradient and curvature drifts, polarization drifts, and parallel currents through sheaths, where the magnetic field lines intersect material walls. In the ideal limit, the radial velocity of the filament increases with the square root of its size. When sheath currents dominate over polarization currents, the filament velocity is inversely proportional to the square of its size. In the presence of sheath currents, the velocity is maximum for an intermediate filament size determined by the balance between diamagnetic, polarization, and sheath currents. The parameter dependence of this filament size and velocity is elucidated. The results are discussed in the context of blob-like structures in basic laboratory plasma experiments and in the scrape-off layer of magnetically confined plasmas.

  4. Detection and characterization of multi-filament evolution during resistive switching

    SciTech Connect (OSTI)

    Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.

    2014-08-05

    We present resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes, and develop a geometrically defined equivalent circuit to separate the individual resistances and powers dissipated in each filament. Using these resolved values, we compare the individual switching curves of each filament and demonstrate that the switching data of each filament collapse onto a single switching curve determined by the analytical steady-state resistive switching solution for filamentary switching. Analyzing our results in terms of this solution, we determine the switching temperature, heat flow, conductivity, and time evolving areas of each filament during resistive switching. Finally, we discuss operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.

  5. CLUSTER FORMATION TRIGGERED BY FILAMENT COLLISIONS IN SERPENS SOUTH

    SciTech Connect (OSTI)

    Nakamura, Fumitaka; Kawabe, Ryohei; Shinnaga, Hiroko; Sugitani, Koji; Tanaka, Tomohiro; Kimura, Kimihiko; Tokuda, Kazuki; Kozu, Minato; Okada, Nozomi; Hasegawa, Yutaka; Ogawa, Hideo; Nishitani, Hiroyuki; Mizuno, Izumi; Dobashi, Kazuhito; Shimoikura, Tomomi; Shimajiri, Yoshito; Kameno, Seiji; Momose, Munetake; Nakajima, Taku; and others

    2014-08-20

    The Serpens South infrared dark cloud consists of several filamentary ridges, some of which fragment into dense clumps. On the basis of CCS (J{sub N} = 4{sub 3}-3{sub 2}), HC{sub 3}N (J = 5-4), N{sub 2}H{sup +} (J = 1-0), and SiO (J = 2-1, v = 0) observations, we investigated the kinematics and chemical evolution of these filamentary ridges. We find that CCS is extremely abundant along the main filament in the protocluster clump. We emphasize that Serpens South is the first cluster-forming region where extremely strong CCS emission is detected. The CCS-to-N{sub 2}H{sup +} abundance ratio is estimated to be about 0.5 toward the protocluster clump, whereas it is about 3 in the other parts of the main filament. We identify six dense ridges with different V {sub LSR}. These ridges appear to converge toward the protocluster clump, suggesting that the collisions of these ridges may have triggered cluster formation. The collisions presumably happened within a few 10{sup 5}yr because CCS is abundant only for a short time. The short lifetime agrees with the fact that the number fraction of Class I objects, whose typical lifetime is 0.4 10{sup 5}yr, is extremely high, about 70% in the protocluster clump. In the northern part, two ridges appear to have partially collided, forming a V-shape clump. In addition, we detected strong bipolar SiO emission that is due to the molecular outflow blowing out of the protostellar clump, as well as extended weak SiO emission that may originate from the filament collisions.

  6. Filamentation instability of current-driven dust ion-acoustic waves in a collisional dusty plasma

    SciTech Connect (OSTI)

    Niknam, A. R. [Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Tehran 19839-63113 (Iran, Islamic Republic of); Haghtalab, T.; Khorashadizadeh, S. M. [Physics Department, Birjand University, Birjand 97179-63384 (Iran, Islamic Republic of)

    2011-11-15

    A theoretical investigation has been made of the dust ion-acoustic filamentation instability in an unmagnetized current-driven dusty plasma by using the Lorentz transformation formulas. The effect of collision between the charged particles with neutrals and their thermal motion on this instability is considered. Developing the filamentation instability of the current-driven dust ion-acoustic wave allows us to determine the period and the establishment time of the filamentation structure and threshold for instability development.

  7. Simulation of filamentation instability of a current-carrying plasma by particle in cell method

    SciTech Connect (OSTI)

    Niknam, A. R.; Mostafavi, P. S.; Komaizi, D.; Salahshoor, M. [Laser-Plasma Research Institute, Shahid Beheshti University, G. C., Tehran 19839-63113 (Iran, Islamic Republic of)

    2012-08-15

    The nonlinear dynamics of filamentation instability in a weakly ionized current-carrying plasma in the diffusion frequency region is studied using particle in cell simulation. The effects of electron thermal motion and ion-neutral collision on the evolution of this instability in the nonlinear stage of the filaments coalescence are discussed. It is found that the coalescence of the current filaments is enhanced by increasing the temperature and is delayed by increasing the collision frequency.

  8. Filamentation induced by collinear femtosecond double pulses with different wavelengths in air

    SciTech Connect (OSTI)

    Li, Suyu; Sui, Laizhi; Li, Shuchang; Liu, Dunli; Li, He; Li, Qingyi; Zhang, Fangjian; Chen, Anmin; Jiang, Yuanfei Jin, Mingxing

    2015-09-15

    Filamentation induced by collinear femtosecond double pulses with different wavelengths (400 nm + 800 nm) in air is investigated by measuring the filament spectra along the propagation axis. By changing their energies and the time delay between them, the role of each pulse in the filamentation is investigated. Though the two pulses do not overlap in time, the filament generated by the previous pulse will interact with the latter one, thus affecting the filamentation process. Each pulse plays a different role when the time delay and input energy are different: As the energy of the 800 nm pulse is relative high (∼600 μJ), the 400 nm pulse has inhibitory and supplementary effects on the filament generated by the 800 nm one as it is prior to and behind the 800 nm one, respectively, which ultimately influences the filament length and strength; however, as energy of the 800 nm pulse decreases to 340 μJ, the filament mainly results from the 400 nm pulse and the 800 nm one just plays an auxiliary role. This study provides an effective way to control filamentation.

  9. Structural basis for the prion-like MAVS filaments in antiviral...

    Office of Scientific and Technical Information (OSTI)

    in antiviral innate immunity Citation Details In-Document Search Title: Structural basis for the prion-like MAVS filaments in antiviral innate immunity Authors: Xu, Hui ; He, ...

  10. Kink instability evidenced by analyzing the leg rotation of a filament

    SciTech Connect (OSTI)

    Yan, X. L.; Xue, Z. K.; Ma, L.; Kong, D. F.; Qu, Z. Q.; Liu, J. H.; Li, Z.

    2014-02-20

    Kink instability is a possible mechanism for solar filament eruption. However, it is very difficult to directly measure the twist of the solar filament from observation. In this paper, we measured the twist of a solar filament by analyzing its leg rotation. An inverse S-shaped filament in the active region NOAA 11485 was observed by the Atmospheric Imaging Assembly of the Solar Dynamics Observatory on 2012 May 22. During its eruption, the leg of the filament exhibited a significant rotation motion. The 304 images were used to uncurl the circles, the centers of which are the axis of the filament's leg. The result shows that the leg of the filament rotated up to about 510 (about 2.83?) around the axis of the filament within 23 minutes. The maximal rotation speed reached 100 degrees/minute (about 379.9 km s{sup 1} at radius 18''), which is the fastest rotation speed reported. We also calculated the decay index along the polarity inversion line in this active region and found that the decline of the overlying field with height is not fast enough to trigger the torus instability. According to the kink instability condition, this indicates that the kink instability is the trigger mechanism for the solar filament eruption.

  11. THE DISAPPEARING SOLAR FILAMENT OF 2003 JUNE 11: A THREE-BODY PROBLEM

    SciTech Connect (OSTI)

    Balasubramaniam, K. S.; Pevtsov, A. A.; Cliver, E. W.; Martin, S. F.; Panasenco, O.

    2011-12-20

    The eruption of a large quiescent filament on 2003 June 11 was preceded by the birth of a nearby active region-a common scenario. In this case, however, the filament lay near a pre-existing active region and the new active region did not destabilize the filament by direct magnetic connection. Instead it appears to have done so indirectly via magnetic coupling with the established region. Restructuring between the perturbed fields of the old region and the filament then weakened the arcade overlying the midpoint of filament, where the eruption originated. The inferred rate ({approx}11 Degree-Sign day{sup -1}) at which the magnetic disturbance propagates from the mature region to destabilize the filament is larger than the mean speed ({approx}5 Masculine-Ordinal-Indicator -6 Degree-Sign day{sup -1}) but still within the scatter obtained for Bruzek's empirical relationship between the distance from a newly formed active region to a quiescent filament and the time from active region appearance to filament disappearance. The higher propagation speed in the 2003 June 11 case may be due to the 'broadside' (versus 'end-on') angle of attack of the (effective) new flux to the coronal magnetic fields overlying a central section of the axis of the filament.

  12. Filamentation of IR and UV femtosecond pulses upon focusing in air

    SciTech Connect (OSTI)

    Dergachev, A A; Ionin, Andrei A; Kandidov, V P; Seleznev, L V; Sinitsyn, D V; Sunchugasheva, E S; Shlenov, Svyatoslav A

    2013-01-31

    The filamentation of IR and UV laser pulses has been studied numerically and experimentally for different initial beam focusing geometries, and linear electron density profiles along the plasma channel of filaments have been obtained. The results demonstrate that changes in laser beam focusing have a stronger effect on filament and plasma channel parameters for UV radiation than for IR radiation. Focusing causes individual high fluence regions produced by refocusing to merge to form a continuous extended filament with a continuous plasma channel. (nonlinear optical phenomena)

  13. THE CONTRACTION OF OVERLYING CORONAL LOOP AND THE ROTATING MOTION OF A SIGMOID FILAMENT DURING ITS ERUPTION

    SciTech Connect (OSTI)

    Yan, X. L.; Qu, Z. Q.; Xue, Z. K.; Deng, L. H.; Ma, L.; Kong, D. F.; Liu, J. H.

    2013-06-15

    We present an observation of overlying coronal loop contraction and rotating motion of the sigmoid filament during its eruption on 2012 May 22 observed by the Solar Dynamics Observatory (SDO). Our results show that the twist can be transported into the filament from the lower atmosphere to the higher atmosphere. The successive contraction of the coronal loops was due to a suddenly reduced magnetic pressure underneath the filament, which was caused by the rising of the filament. Before the sigmoid filament eruption, there was a counterclockwise flow in the photosphere at the right feet of the filament and the contraction loops and a convergence flow at the left foot of the filament. The hot and cool materials have inverse motion along the filament before the filament eruption. Moreover, two coronal loops overlying the filament first experienced brightening, expansion, and contraction successively. At the beginning of the rising and rotation of the left part of the filament, the second coronal loop exhibited rapid contraction. The top of the second coronal loop also showed counterclockwise rotation during the contraction process. After the contraction of the second loop, the left part of the filament rotated counterclockwise and expanded toward the right of NOAA AR 11485. During the filament expansion, the right part of the filament also exhibited counterclockwise rotation like a tornado.

  14. Preparation and uses of amorphous boron carbide coated substrates

    DOE Patents [OSTI]

    Riley, R.E.; Newkirk, L.R.; Valencia, F.A.; Wallace, T.C.

    1979-12-05

    Cloth is coated at a temperature below about 1000/sup 0/C with amorphous boron-carbon deposits in a process which provides a substantially uniform coating on all the filaments making up each yarn fiber bundle of the cloth. The coated cloths can be used in the as-deposited condition for example as wear surfaces where high hardness values are needed; or multiple layers of coated cloths can be hot-pressed to form billets useful for example in fusion reactor wall armor. Also provided is a method of controlling the atom ratio of B:C of boron-carbon deposits onto any of a variety of substrates, including cloths.

  15. Preparation and uses of amorphous boron carbide coated substrates

    DOE Patents [OSTI]

    Riley, Robert E.; Newkirk, Lawrence R.; Valencia, Flavio A.

    1981-09-01

    Cloth is coated at a temperature below about 1000.degree. C. with amorphous boron-carbon deposits in a process which provides a substantially uniform coating on all the filaments making up each yarn fiber bundle of the cloth. The coated cloths can be used in the as-deposited condition for example as wear surfaces where high hardness values are needed; or multiple layers of coated cloths can be hot-pressed to form billets useful for example in fusion reactor wall armor. Also provided is a method of controlling the atom ratio of B:C of boron-carbon deposits onto any of a variety of substrates, including cloths.

  16. Dark Matter and Synchrotron Emission from Galactic Center Radio Filaments

    SciTech Connect (OSTI)

    Linden, Tim; Hooper, Dan; Yusef-Zadeh, Farhad

    2011-11-10

    The inner degrees of the Galactic center contain a large population of filamentary structures observed at radio frequencies. These so-called non-thermal radio filaments (NRFs) trace magnetic field lines and have attracted significant interest due to their hard (S_v ~ -0.1 +/- 0.4) synchrotron emission spectra. The origin of these filaments remains poorly understood. We show that the electrons and positrons created through the annihilations of a relatively light (~5-10 GeV) dark matter particle with the cross section predicted for a simple thermal relic can provide a compelling match to the intensity, spectral shape, and flux variation of the NRFs. Furthermore, the characteristics of the dark matter particle necessary to explain the synchrotron emission from the NRFs is consistent with those required to explain the excess gamma-ray emission observed from the Galactic center by the Fermi-LAT, as well as the direct detection signals observed by CoGeNT and DAMA/LIBRA.

  17. Current sheet oscillations in the magnetic filament approach

    SciTech Connect (OSTI)

    Erkaev, N. V.; Semenov, V. S.; Biernat, H. K.

    2012-06-15

    Magnetic filament approach is applied for modeling of nonlinear 'kink'-like flapping oscillations of thin magnetic flux tubes in the Earth's magnetotail current sheet. A discrete approximation for the magnetic flux tube was derived on a basis of the Hamiltonian formulation of the problem. The obtained system of ordinary differential equations was integrated by method of Rosenbrock, which is suitable for stiff equations. The two-dimensional exact Kan's solution of the Vlasov equations was used to set the background equilibrium conditions for magnetic field and plasma. Boundary conditions for the magnetic filament were found to be dependent on the ratio of the ionospheric conductivity and the Alfven conductivity of the magnetic tube. It was shown that an enhancement of this ratio leads to the corresponding increase of the frequency of the flapping oscillations. For some special case of boundary conditions, when the magnetic perturbations vanish at the boundaries, the calculated frequency of the 'kink'-like flapping oscillations is rather close to that predicted by the 'double gradient' analytical model. For others cases, the obtained frequency of the flapping oscillations is somewhat larger than that from the 'double gradient' theory. The frequency of the nonlinear flapping oscillations was found to be a decreasing function of the amplitude.

  18. AN INTERACTING GALAXY SYSTEM ALONG A FILAMENT IN A VOID

    SciTech Connect (OSTI)

    Beygu, B.; Van de Weygaert, R.; Van der Hulst, J. M.; Kreckel, K.; Van Gorkom, J. H.

    2013-05-15

    Cosmological voids provide a unique environment for the study of galaxy formation and evolution. The galaxy population in their interiors has properties significantly different from average field galaxies. As part of our Void Galaxy Survey (VGS), we have found a system of three interacting galaxies (VGS{sub 3}1) inside a large void. VGS{sub 3}1 is a small elongated group whose members are embedded in a common H I envelope. The H I picture suggests a filamentary structure with accretion of intergalactic cold gas from the filament onto the galaxies. We present deep optical and narrowband H{alpha} data, optical spectroscopy, near-UV, and far-UV Galaxy Evolution Explorer and CO(1-0) data. We find that one of the galaxies, a Markarian object, has a ring-like structure and a tail evident both in optical and H I. While all three galaxies form stars in their central parts, the tail and the ring of the Markarian object are devoid of star formation. We discuss these findings in terms of a gravitational interaction and ongoing growth of galaxies out of a filament. VGS{sub 3}1 is one of the first observed examples of a filamentary structure in a void. It is an important prototype for understanding the formation of substructure in a void. This system also shows that the galaxy evolution in voids can be as dynamic as in high-density environments.

  19. LARGE-AMPLITUDE LONGITUDINAL OSCILLATIONS IN A SOLAR FILAMENT

    SciTech Connect (OSTI)

    Luna, M.

    2012-05-01

    We have developed the first self-consistent model for the observed large-amplitude oscillations along filament axes that explains the restoring force and damping mechanism. We have investigated the oscillations of multiple threads formed in long, dipped flux tubes through the thermal nonequilibrium process, and found that the oscillation properties predicted by our simulations agree with the observed behavior. We then constructed a model for the large-amplitude longitudinal oscillations that demonstrates that the restoring force is the projected gravity in the tube where the threads oscillate. Although the period is independent of the tube length and the constantly growing mass, the motions are strongly damped by the steady accretion of mass onto the threads by thermal nonequilibrium. The observations and our model suggest that a nearby impulsive event drives the existing prominence threads along their supporting tubes, away from the heating deposition site, without destroying them. The subsequent oscillations occur because the displaced threads reside in magnetic concavities with large radii of curvature. Our model yields a powerful seismological method for constraining the coronal magnetic field and radius of curvature of dips. Furthermore, these results indicate that the magnetic structure is most consistent with the sheared-arcade model for filament channels.

  20. Characterization of transition carbides in quench and partitioned steel microstructures by Mssbauer spectroscopy and complementary techniques

    SciTech Connect (OSTI)

    Pierce, D. T.; Coughlin, D. R.; Williamson, D. L.; Clarke, K. D.; Clarke, A. J.; Speer, J. G.; De Moor, E.

    2015-05-01

    Quenching and partitioning (Q&P) produces steel microstructures with martensite and austenite that exhibit promising property combinations for third generation advanced high strength steels. Understanding the kinetics of reactions that compete for available carbon, such as carbide formation, is critical for alloying and processing design and achieving austenite enrichment and retention during Q&P. Mssbauer effect spectroscopy (MES) was used to characterize Q&P microstructures in a 0.38C-1.54Mn-1.48Si wt.% steel after quenching to 225 C and partitioning at 400 C for 10 or 300 s, with an emphasis on transition carbides. The recoilless fraction for ?-carbide was calculated and a correction for saturation of the MES absorption spectrum was applied, making quantitative measurements of small amounts of ?-carbide, including non-stoichiometric ?-carbide, possible in Q&P microstructures. Complementary transmission electron microscopy confirmed the presence of ?-carbides, and MES and X-ray diffraction were used to characterize the austenite. The amount of ?-carbide formed during Q&P ranged from 1.4 to 2.4 at.%, accounting for a substantial portion (~24% to 41%) of the bulk carbon content of the steel. The amount (5.0 at.%) of ?-carbide that formed after quenching and tempering (Q&T) at 400 C for 300 s was significantly greater than after partitioning at 400 C for 300 s (2.4 at.%), suggesting that carbon partitioning from martensite to austenite occurs in conjunction with ?-carbide formation during Q&P in these specimens.

  1. Method for silicon carbide production by reacting silica with hydrocarbon gas

    DOE Patents [OSTI]

    Glatzmaier, Gregory C.

    1994-01-01

    A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400.degree. C. to 1000.degree. C. where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100.degree. C. to 1600.degree. C. to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  2. Method for silicon carbide production by reacting silica with hydrocarbon gas

    DOE Patents [OSTI]

    Glatzmaier, G.C.

    1994-06-28

    A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400 C to 1000 C where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100 C to 1600 C to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process. 5 figures.

  3. In situ electrochemical dilatometry of carbide-derived carbons

    SciTech Connect (OSTI)

    Hantel, M M; Presser, Volker; Gogotsi, Yury

    2011-01-01

    The long life durability and extraordinary stability of supercapacitors are ascribed to the common concept that the charge storage is purely based on double-layer charging. Therefore the ideal supercapacitor electrode should be free of charge induced microscopic structural changes. However, recent in-situ investigations on different carbon materials for supercapacitor electrodes have shown that the charge and discharge is accompanied by dimensional changes of the electrode up to several percent. This work studies the influence of the pore size on the expansion behavior of carbon electrodes derived from titanium carbide-derived carbons with an average pore size between 5 and 8 Using tetraethylammonium tetrafluoroborate in acetonitrile, the swelling of the electrodes was measured by in situ dilatometry. The experiments revealed an increased expansion on the negatively charged electrode for pores below 6 , which could be described with pore swelling.

  4. Application of silicon carbide to synchrotron-radiation mirrors

    SciTech Connect (OSTI)

    Takacs, P.Z.; Hursman, T.L.; Williams, J.T.

    1983-09-01

    Damage to conventional mirror materials exposed to the harsh synchrotron radiation (SR) environment has prompted the SR user community to search for more suitable materials. Next-generation insertion devices, with their attendant flux increases, will make the problem of mirror design even more difficult. A parallel effort in searching for better materials has been underway within the laser community for several years. The technology for dealing with high thermal loads is highly developed among laser manufacturers. Performance requirements for laser heat exchangers are remarkably similar to SR mirror requirements. We report on the application of laser heat exchanger technology to the solution of typical SR mirror design problems. The superior performance of silicon carbide for laser applications is illustrated by various material trades studies, and its superior performance for SR applications is illustrated by means of model calculations.

  5. Method of producing novel silicon carbide articles. [Patent application

    DOE Patents [OSTI]

    Milewski, J.V.

    1982-06-18

    A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.

  6. The world`s first commercial iron carbide plant

    SciTech Connect (OSTI)

    Prichard, L.C.; Schad, D.

    1995-12-01

    The paper traces the development of Nucor`s investigation of clean iron unit processes, namely, direct reduction, and the decision to build and operate the world`s first commercial iron carbide plant. They first investigated coal based processes since the US has abundant coal reserves, but found a variety of reasons for dropping the coal-based processes from further consideration. A natural gas based process was selected, but the failure to find economically priced gas supplies stopped the development of a US based venture. It was later found that Trinidad had economically priced and abundant supplies of natural gas, and the system of government, the use of English language, and geographic location were also ideal. The cost estimates required modification of the design, but the plant was begun in April, 1993. Start-up problems with the plant are also discussed. Production should commence shortly.

  7. High surface area silicon carbide-coated carbon aerogel

    DOE Patents [OSTI]

    Worsley, Marcus A; Kuntz, Joshua D; Baumann, Theodore F; Satcher, Jr, Joe H

    2014-01-14

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicone carbide, improved the thermal stability of the carbon aerogel.

  8. Optical limiting effects in nanostructured silicon carbide thin films

    SciTech Connect (OSTI)

    Borshch, A A; Starkov, V N; Volkov, V I; Rudenko, V I; Boyarchuk, A Yu; Semenov, A V

    2013-12-31

    We present the results of experiments on the interaction of nanosecond laser radiation at 532 and 1064 nm with nanostructured silicon carbide thin films of different polytypes. We have found the effect of optical intensity limiting at both wavelengths. The intensity of optical limiting at ? = 532 nm (I{sub cl} ? 10{sup 6} W cm{sup -2}) is shown to be an order of magnitude less than that at ? = 1064 nm (I{sub cl} ? 10{sup 7} W cm{sup -2}). We discuss the nature of the nonlinearity, leading to the optical limiting effect. We have proposed a method for determining the amount of linear and two-photon absorption in material media. (nonlinear optical phenomena)

  9. Advanced Measurements of Silicon Carbide Ceramic Matrix Composites

    SciTech Connect (OSTI)

    Farhad Farzbod; Stephen J. Reese; Zilong Hua; Marat Khafizov; David H. Hurley

    2012-08-01

    Silicon carbide (SiC) is being considered as a fuel cladding material for accident tolerant fuel under the Light Water Reactor Sustainability (LWRS) Program sponsored by the Nuclear Energy Division of the Department of Energy. Silicon carbide has many potential advantages over traditional zirconium based cladding systems. These include high melting point, low susceptibility to corrosion, and low degradation of mechanical properties under neutron irradiation. In addition, ceramic matrix composites (CMCs) made from SiC have high mechanical toughness enabling these materials to withstand thermal and mechanical shock loading. However, many of the fundamental mechanical and thermal properties of SiC CMCs depend strongly on the fabrication process. As a result, extrapolating current materials science databases for these materials to nuclear applications is not possible. The “Advanced Measurements” work package under the LWRS fuels pathway is tasked with the development of measurement techniques that can characterize fundamental thermal and mechanical properties of SiC CMCs. An emphasis is being placed on development of characterization tools that can used for examination of fresh as well as irradiated samples. The work discuss in this report can be divided into two broad categories. The first involves the development of laser ultrasonic techniques to measure the elastic and yield properties and the second involves the development of laser-based techniques to measurement thermal transport properties. Emphasis has been placed on understanding the anisotropic and heterogeneous nature of SiC CMCs in regards to thermal and mechanical properties. The material properties characterized within this work package will be used as validation of advanced materials physics models of SiC CMCs developed under the LWRS fuels pathway. In addition, it is envisioned that similar measurement techniques can be used to provide process control and quality assurance as well as measurement of

  10. Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion

    SciTech Connect (OSTI)

    2010-09-01

    ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.