National Library of Energy BETA

Sample records for drive atlanta ga

  1. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  2. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  3. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  4. INFORMS `03, Atlanta GA, October 19-21 A Supply Chain Network EconomyA Supply Chain Network Economy

    E-Print Network [OSTI]

    Nagurney, Anna

    INFORMS `03, Atlanta GA, October 19-21 A Supply Chain Network EconomyA Supply Chain Network Economy, GA, October 19-22, 2003 Supply Chain EconomySupply Chain Economy Supply Chain Economy (SCE a supply chain economy ­ Comprising heterogeneous supply chains ­ Involving in production, distribution

  5. In Proceedings of the 1999 IEEE/ASME International Conference on Advanced Intelligent Mechatronics, Atlanta, GA. Abstract Advanced mechatronic systems increasingly are

    E-Print Network [OSTI]

    In Proceedings of the 1999 IEEE/ASME International Conference on Advanced Intelligent Mechatronics, Atlanta, GA. Abstract ­ Advanced mechatronic systems increasingly are finding application in modern to be coordinated as an aggregate mechatronic system. One important consideration in mechatronics design

  6. Timothy J. Bartness Departments of Biology and Center for Behavioral Neuroscience, Georgia State University, Atlanta, GA 30303. Gregory E. Demas Department of Biology and Program in Neural

    E-Print Network [OSTI]

    Demas, Greg

    University, Atlanta, GA 30303. Gregory E. Demas Department of Biology and Program in Neural Science, Indiana University, Bloomington, IN 47405. Neurobiology of Food and Fluid Intake, 2nd Ed., Volume 14 of Handbook, and from humans, many or most of the fundamental problems in ingestive behavior 423 #12;have not been

  7. Advancing Residential Retrofits in Atlanta

    SciTech Connect (OSTI)

    Jackson, Roderick K; Kim, Eyu-Jin; Roberts, Sydney; Stephenson, Robert

    2012-07-01

    This report will summarize the home energy improvements performed in the Atlanta, GA area. In total, nine homes were retrofitted with eight of the homes having predicted source energy savings of approximately 30% or greater based on simulated energy consumption.

  8. Atlanta- Sustainable Development Design Standards

    Broader source: Energy.gov [DOE]

    In December 2003, the City of Atlanta passed a green building [http://www.atlantaga.gov/modules/showdocument.aspx?documentid=547 ordinance] that applies to city-owned facilities and city-funded...

  9. Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange

    E-Print Network [OSTI]

    Wang, Zhong L.

    of Technology, Atlanta, GA 30332-0245, USA b School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA Received 17 March 2002; accepted 16 April 2002 by D. Van Dyck Abstract P exchange; D. Stranski­Krastanov (S­K) growth Self-assemble by exploiting the Stranski­Krastanov (S

  10. Georgia Tech Manufacturing Institute | 813 Ferst Drive, N.W. | Atlanta, GA 30332-0560 | (404) 894-9100 | www.manufacturing.gatech.edu Manufacturing is in Georgia Tech's DNA: GTMI Binds it Together

    E-Print Network [OSTI]

    Das, Suman

    -suited for the rapidly evolving world of manufacturing. Collaboration and Innovation are Core Strengths Among GTMI partners · Awarded a grant to develop and lead the Consortium for Accelerated Innovation and Insertion for electronics, solar energy, woodworking and precision machining industries that allow companies to easily work

  11. Institute for Electronics and Nanotechnology | Georgia Institute of Technology 345 Ferst Drive NW | Atlanta, GA 30318 | 404.894.5100 | info@ien.gatech.edu | www.ien.gatech.edu

    E-Print Network [OSTI]

    Garmestani, Hamid

    Scientific K-Alpha XPS X-ray Photoelectron Spectroscope > Selectable area spectroscopy and Ar sputter depth conductive-AFM and magnetic force microscopy > Provides analysis data on the electrical and mechanical Spectrometer > Excellent for characterizing multi-layer laminates, thin films, inclusions and subsurface

  12. Georgia Tech Manufacturing Institute | 813 Ferst Drive, N.W. | Atlanta, GA 30332-0560 | (404) 894-9100 | www.manufacturing.gatech.edu Point of View: The Internet of Things for Manufacturing

    E-Print Network [OSTI]

    Das, Suman

    -9100 | www.manufacturing.gatech.edu Point of View: The Internet of Things for Manufacturing (IoTfM) By Introduction The Internet of Things is predicted to have a huge impact on the future of manu- facturing. According to the Industrial IP Advantage resource center, the Internet of Things has an estimated value

  13. Will A. Overholt 388 Oakland Ave SE, Atlanta, GA 30312

    E-Print Network [OSTI]

    Storici, Francesca

    sequences for oil-degrading bacterial strains from beach sands impacted by the Deepwater Horizon oil spill in Gulf of Mexico Beach Sands Impacted by the Deepwater Horizon Oil Spill. Applied and Environmental the metabolic potential of indigenous microbial communities with the degradation of oil-hydrocarbons in deep sea

  14. Atlanta Chemical Engineering LLC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex A SOpenAshley, Ohio:Atchison-HoltAtlanta Chemical Engineering

  15. Atlanta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex A SOpenAshley, Ohio:Atchison-HoltAtlanta Chemical

  16. Energy Management Program at Atlanta Postal Service Distribution Center 

    E-Print Network [OSTI]

    Brown, M.; Ansari, A.

    2001-01-01

    of standard operating procedures, energy monitoring, and team-based problem solving. Implementation activity at the Atlanta Bulk Mail Facility has included a gap analysis, selection of an implementation team, and initial training. During the first quarter...

  17. Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D B L O O D S TA I NLoans The Oregon DepartmentAtlanta Airport

  18. North Atlanta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPI VenturesNew Hampshire: EnergyReservoir |Solkraft AS JumpAndrewsAtlanta,

  19. Workplace Charging Challenge Partner: City of Atlanta | Department of

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirley Ann JacksonDepartment| Department of EnergyDataWind TheEnergyEnergy Atlanta The

  20. DOE ZERH Case Study: Heirloom Design Build, Euclid Avenue, Atlanta, GA

    SciTech Connect (OSTI)

    none,

    2015-09-01

    Case study of a DOE 2015 Housing Innovation Award winning custom home in the mixed-humid climate that got a HERS 50 without PV, with 2x6 16” on center walls with R-19 ocsf; basement with R-28 ccsf, R-5 rigid foam under slab; sealed attic with R-28 ocsf under roof deck; 22.8 SEER; 12.5 HSPF heat pump.

  1. Secretary Moniz's Keynote at the Sam Nunn Policy Forum in Atlanta, GA --

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy BillsNo.Hydrogen4 » Searchwith First James R. SchlesingerAs Delivered |

  2. Remarks by Federal Blue Ribbon Commission J. David Jameson Atlanta, GA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMassR&D100 Winners *Reindustrialization Reindustrialization AsInnovation Portal

  3. HIA 2015 DOE Zero Energy Ready Home Case Study: Heirloom Design Build, Euclid Avenue, Atlanta, GA

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing Programs |Reference StationFranklinHammer and Hand

  4. Secretary Moniz's Keynote at the Sam Nunn Policy Forum in Atlanta, GA --

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirley Ann JacksonDepartment ofOffice|inWestMay 13,Discuss theDepartment of EnergyMarissaAs

  5. Building America Case Study: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2014-09-01

    As part of the NAHB Research Center Industry Partnership, Southface partnered with TaC Studios, an Atlanta based architecture firm specializing in residential and light commercial design, on the construction of a new test home in Atlanta, GA in the mixed-humid climate. This home serves as a residence and home office for the firm's owners, as well as a demonstration of their design approach to potential and current clients. Southface believes the home demonstrates current best practices for the mixed-humid climate, including a building envelope featuring advanced air sealing details and low density spray foam insulation, glazing that exceeds ENERGY STAR requirements, and a high performance heating and cooling system. Construction quality and execution was a high priority for TaC Studios and was ensured by a third party review process. Post construction testing showed that the project met stated goals for envelope performance, an air infiltration rate of 2.15 ACH50. The homeowner's wished to further validate whole house energy savings through the project's involvement with Building America and this long-term monitoring effort. As a Building America test home, this home was evaluated to detail whole house energy use, end use loads, and the efficiency and operation of the ground source heat pump and associated systems. Given that the home includes many non-typical end use loads including a home office, pool, landscape water feature, and other luxury features not accounted for in Building America modeling tools, these end uses were separately monitored to determine their impact on overall energy consumption.

  6. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    60tifrancis2012o.pdf More Documents & Publications DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb CountyMetropolitan...

  7. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    vt060francis2010p.pdf More Documents & Publications DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb CountyMetropolitan...

  8. DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    60tifrancis2011p.pdf More Documents & Publications DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project DeKalb CountyMetropolitan...

  9. Community transportation : alternative transportation provision in a low-income neighborhoods in southeast Atlanta

    E-Print Network [OSTI]

    Alexander, James W., 1977-

    2004-01-01

    Regional transit agencies are ineffective at meeting many of the basic transportation needs of a clustered "Study Area" of low-income Atlanta neighborhoods. For transit dependant residents in the Study Area, getting to the ...

  10. Vehicle Technologies Office Merit Review 2015: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives

    Broader source: Energy.gov [DOE]

    Presentation given by APEI Inc. at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about advanced low-cost SiC and GaN wide...

  11. Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives

    Broader source: Energy.gov [DOE]

    Presentation given by APEI Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about Advanced low-cost SIC and GaN wide...

  12. DRIVING DIRECTIONS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding Low-Cost2 DOE HQSiteo n n eDPFJ.D.DRIVING DIRECTIONS

  13. Winter Driving Tips Driving in Ice & Snow

    E-Print Network [OSTI]

    Capogna, Luca

    Winter Driving Tips Driving in Ice & Snow: When you must drive, clear the ice and snow from your in ice and snow, other drivers will be traveling cautiously. Don't disrupt the flow of traffic by driving handle better in ice and snow, but they do not have flawless traction, and skids can occur unexpectedly

  14. Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs

    E-Print Network [OSTI]

    Fan, Kebin

    We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ?20–160??kV/cm drives intervalley scattering. ...

  15. Engineering AnteaterDrive

    E-Print Network [OSTI]

    Markopoulou, Athina

    Rockw ell & M DEA Engineering Tower AnteaterDrive AnteaterDrive East Peltason Drive EastPeltasonDrive East Peltason Drive Anteater Parking Structure EngineeringServiceRoad Engineering Laboratory Facility Engineering Gateway Engineering Hall AIRB Calit2 Engineering Lecture Hall Campus Building Engineering Building

  16. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect (OSTI)

    Not Available

    2011-05-01

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  17. SW CAMPUS DRIVE SW CAMPUS DRIVE

    E-Print Network [OSTI]

    Chapman, Michael S.

    SW CAMPUS DRIVE SW VETERANS HOSPITAL ROAD SW GAINES ROAD SW 6THAVENUE SW CAMPUS DRIVE SW SAM JACKSON ROAD SW SAM JACKSON ROAD SW SAM J ACKSONROAD SW TERWILLIGER BOULEVARD SW6THAVE SW 11TH AVE SW VETERAN S H O SPITAL ROAD SW TERWILLIGERBLVD SW T ERWILLIGER B LVD SW V ETERANS HOSPITAL ROAD P V V E V V

  18. Aero-Structural Design Investigations for Biplane Wind Turbine Blades

    E-Print Network [OSTI]

    Roth-Johnson, Perry

    2014-01-01

    Turbine Blades,” in AWEA Windpower, (Atlanta, GA), pp. 1–22,turbine blades,” AWEA Windpower, Atlanta, GA, (presentation)

  19. Piezoelectric drive circuit

    DOE Patents [OSTI]

    Treu, Jr., Charles A. (Raymore, MO)

    1999-08-31

    A piezoelectric motor drive circuit is provided which utilizes the piezoelectric elements as oscillators and a Meacham half-bridge approach to develop feedback from the motor ground circuit to produce a signal to drive amplifiers to power the motor. The circuit automatically compensates for shifts in harmonic frequency of the piezoelectric elements due to pressure and temperature changes.

  20. Piezoelectric drive circuit

    DOE Patents [OSTI]

    Treu, C.A. Jr.

    1999-08-31

    A piezoelectric motor drive circuit is provided which utilizes the piezoelectric elements as oscillators and a Meacham half-bridge approach to develop feedback from the motor ground circuit to produce a signal to drive amplifiers to power the motor. The circuit automatically compensates for shifts in harmonic frequency of the piezoelectric elements due to pressure and temperature changes. 7 figs.

  1. 15th Symposium on Meteorological Observations and Instrumentation, AMS, Atlanta, 2010 RECENT RESEARCH ON METEOROLOGICAL OBSERVATIONS AND INSTRUMENTATION AT

    E-Print Network [OSTI]

    Wauben, Wiel

    15th Symposium on Meteorological Observations and Instrumentation, AMS, Atlanta, 2010 1 RECENT RESEARCH ON METEOROLOGICAL OBSERVATIONS AND INSTRUMENTATION AT KNMI Hannelore Bloemink, Marijn de Haij are generated at about 30 locations in the meteorological network and are centrally available every 10 minutes

  2. Preprint: Centennial Meeting of the American Physical Society Meeting, Atlanta, 1999, to be published in Computer Physics Communication

    E-Print Network [OSTI]

    Heermann, Dieter W.

    Preprint: Centennial Meeting of the American Physical Society Meeting, Atlanta, 1999, to be published in Computer Physics Communication Teaching Physics in the Virtual University: The Mechanics and some basic physical objects implemented as Java classes. Students can extend these classes in order

  3. Atlanta Survey

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet) Wyoming963 1.969 1.979Coal4 Arizona - NaturalYear JanProfile of Motor-Vehicle

  4. Does Doctrine Drive Technology or Does Technology Drive Doctrine?

    E-Print Network [OSTI]

    Blasko, Dennis

    2010-01-01

    Policy Brief No. 4 September 2010 Does Doctrine DriveTechnology or Does Technology Drive Doctrine? Dennis Blaskoone way. However, technology does not determine strat- egy.

  5. US DRIVE Driving Research and Innovation for Vehicle Efficiency...

    Office of Environmental Management (EM)

    Documents & Publications US DRIVE Fuel Pathway Integration Technical Team Roadmap Hydrogen Program Goal-Setting Methodologies Report to Congress US DRIVE Hydrogen Production...

  6. Does Doctrine Drive Technology or Does Technology Drive Doctrine?

    E-Print Network [OSTI]

    Blasko, Dennis

    2010-01-01

    Brief No. 4 September 2010 Does Doctrine Drive Technology orDoes Technology Drive Doctrine? Dennis Blasko Summary Wthat emphasizes strategy over technology and may hold some

  7. Ride and Drive Webinar

    Broader source: Energy.gov [DOE]

    Listen to this webinar and follow along using the slides below to learn how on-site plug-in electric vehicle (PEV) Ride and Drives can create value for your organization, your employees, and your...

  8. Direct drive wind turbine

    DOE Patents [OSTI]

    Bywaters, Garrett Lee; Danforth, William; Bevington, Christopher; Stowell, Jesse; Costin, Daniel

    2006-09-19

    A wind turbine is provided that minimizes the size of the drive train and nacelle while maintaining the power electronics and transformer at the top of the tower. The turbine includes a direct drive generator having an integrated disk brake positioned radially inside the stator while minimizing the potential for contamination. The turbine further includes a means for mounting a transformer below the nacelle within the tower.

  9. Direct drive wind turbine

    DOE Patents [OSTI]

    Bywaters, Garrett; Danforth, William; Bevington, Christopher; Jesse, Stowell; Costin, Daniel

    2007-02-27

    A wind turbine is provided that minimizes the size of the drive train and nacelle while maintaining the power electronics and transformer at the top of the tower. The turbine includes a direct drive generator having an integrated disk brake positioned radially inside the stator while minimizing the potential for contamination. The turbine further includes a means for mounting a transformer below the nacelle within the tower.

  10. Direct drive wind turbine

    DOE Patents [OSTI]

    Bywaters, Garrett; Danforth, William; Bevington, Christopher; Stowell, Jesse; Costin, Daniel

    2006-07-11

    A wind turbine is provided that minimizes the size of the drive train and nacelle while maintaining the power electronics and transformer at the top of the tower. The turbine includes a direct drive generator having an integrated disk brake positioned radially inside the stator while minimizing the potential for contamination. The turbine further includes a means for mounting a transformer below the nacelle within the tower.

  11. Direct drive wind turbine

    DOE Patents [OSTI]

    Bywaters, Garrett; Danforth, William; Bevington, Christopher; Jesse, Stowell; Costin, Daniel

    2006-10-10

    A wind turbine is provided that minimizes the size of the drive train and nacelle while maintaining the power electronics and transformer at the top of the tower. The turbine includes a direct drive generator having an integrated disk brake positioned radially inside the stator while minimizing the potential for contamination. The turbine further includes a means for mounting a transformer below the nacelle within the tower.

  12. Comparison of nonmethane organic compound concentration data collected by two methods in Atlanta

    SciTech Connect (OSTI)

    Shreffler, J.H.

    1993-12-01

    Title I of the Clean Air Act Amendments of 1990 calls for 'enhanced monitoring' of ozone, which is planned to include measurements of atmospheric non-methane organic compounds (NMOCs). NMOC concentration data gathered by two methods in Atlanta, Georgia during July and August 1990 are compared in order to assess the reliability of such measurements in an operational setting. During that period, automated gas chromatography (GC) systems (Field systems) were used to collect NMOC continuously as one-hour averages. In addition, canister samples of ambient air were collected on an intermittent schedule for quality control purposes and analyzed by laboratory GC (the Lab system). Data from the six-site network included concentrations of nitrogen oxides (NOx), carbon monoxide (CO), ozone, total NMOC (TNMOVC), and 47 identified NMOCs. (Copyright (c) 1993-Air Waste Management Association.)

  13. ARCS Additional FirstYear PhD Student Award The Atlanta chapter of ARCS has just informed me that they will honor us with another graduate student

    E-Print Network [OSTI]

    Arnold, Jonathan

    ARCS Additional FirstYear PhD Student Award The Atlanta chapter of ARCS has just informed me meets their definition listed above. Sincerely, Harry A. Dailey, Ph.D. Professor and Director

  14. Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics

    SciTech Connect (OSTI)

    ERTEN ESER

    2012-01-22

    The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

  15. Electric-Drive Vehicle engineering

    E-Print Network [OSTI]

    Berdichevsky, Victor

    Electric-Drive Vehicle engineering COLLEGE of ENGINEERING Electric-driveVehicle engineers for 80 years t Home to nation's first electric-drive vehicle engineering program and alternative-credit EDGE Engineering Entrepreneur Certificate Program is a great addition to an electric-drive vehicle

  16. U.S. DRIVE

    SciTech Connect (OSTI)

    2012-03-16

    U.S. DRIVE, which stands for United States Driving Research and Innovation for Vehicle efficiency and Energy sustainability, is an expanded government-industry partnership among the U.S. Department of Energy; USCAR, representing Chrysler Group LLC, Ford Motor Company and General Motors; Tesla Motors; five energy companies – BP America, Chevron Corporation, ConocoPhillips, ExxonMobil Corporation, and Shell Oil Products US; two utilities – Southern California Edison and Michigan-based DTE Energy; and the Electric Power Research Institute (EPRI). The U.S. DRIVE mission is to accelerate the development of pre-competitive and innovative technologies to enable a full range of affordable and clean advanced light-duty vehicles, as well as related energy infrastructure.

  17. Ceramic vane drive joint

    DOE Patents [OSTI]

    Smale, Charles H. (Indianapolis, IN)

    1981-01-01

    A variable geometry gas turbine has an array of ceramic composition vanes positioned by an actuating ring coupled through a plurality of circumferentially spaced turbine vane levers to the outer end of a metallic vane drive shaft at each of the ceramic vanes. Each of the ceramic vanes has an end slot of bow tie configuration including flared end segments and a center slot therebetween. Each of the vane drive shafts has a cross head with ends thereof spaced with respect to the sides of the end slot to define clearance for free expansion of the cross head with respect to the vane and the cross head being configured to uniformly distribute drive loads across bearing surfaces of the vane slot.

  18. Holiday Food Drive

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation CurrentHenry Bellamy, Ph.D.Food Drive Holiday Food Drive Laboratory employees

  19. Holiday Gift Drive

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation CurrentHenry Bellamy, Ph.D.Food Drive Holiday Food Drive Laboratory

  20. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  1. BOOKSHELF Hard Disk Drive

    E-Print Network [OSTI]

    Benmei, Chen

    » BOOKSHELF Hard Disk Drive Servo Systems, 2nd edition by B.M. CHEN, T.H. LEE, K. PENG, and V at Seagate Research working on spinstand microactuator integration, and I continued to work at Sea- gate part 15% of track pitch 3 , leads to fundamental challenges in position detection, while pushing band

  2. Variable Frequency Pump Drives 

    E-Print Network [OSTI]

    Karassik, I. J.; Petraccaro, L. L.; McGuire, J. T.

    1986-01-01

    variable flow operation, Fig. 2 variable system head, the objective of the latter being to maintain pump flow within an optimum range while accommodating a wide variation in system head. VARYING OPERATING CAPACITY OPERATING CAPACITY? N, RANGE HEAD...-rotor motors and variable speed devices have slip losses that significantly reduce the savings that accrue by operating pumps at variable speed. Steam turbine drives may not always be the most practical or economic solution. The variable frequency...

  3. Driving Innovation through Federal

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i Framing DocumentUnits at Eight-<DominionAVOLUMEULP PEISSavingsDriving

  4. Marketing & Driving Demand Collaborative - Social Media Tools...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    & Driving Demand Collaborative - Social Media Tools & Strategies Marketing & Driving Demand Collaborative - Social Media Tools & Strategies Presentation slides from the Better...

  5. Next Generation Environmentally Friendly Driving Feedback Systems...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Environmentally Friendly Driving Feedback Systems Research and Development Next Generation Environmentally Friendly Driving Feedback Systems Research and Development 2012 DOE...

  6. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  7. Rotary drive mechanism

    SciTech Connect (OSTI)

    Kenderdine, E.W.

    1991-10-08

    This patent describes a rotary drive mechanism which includes a rotary solenoid having a stator and multi-poled rotor. A moving member rotates with the rotor and is biased by a biasing device. The biasing device causes a further rotational movement after rotation by the rotary solenoid. Thus, energization of the rotary solenoid moves the member in one direction to one position and biases the biasing device against the member. Subsequently, de- energization of the rotary solenoid causes the biasing device to move the member in the same direction to another position from where the moving member is again movable by energization and de-energization of the rotary solenoid. Preferably, the moving member is a multi-lobed cam having the same number of lobes as the rotor has poles. An anti- overdrive device is also preferably provided for preventing overdrive in the forward direction or a reverse rotation of the moving member and for precisely aligning the moving member.

  8. Rotary drive mechanism

    DOE Patents [OSTI]

    Kenderdine, Eugene W. (Albuquerque, NM)

    1991-01-01

    A rotary drive mechanism includes a rotary solenoid having a stator and multi-poled rotor. A moving member rotates with the rotor and is biased by a biasing device. The biasing device causes a further rotational movement after rotation by the rotary solenoid. Thus, energization of the rotary solenoid moves the member in one direction to one position and biases the biasing device against the member. Subsequently, de-energization of the rotary solenoid causes the biasing device to move the member in the same direction to another position from where the moving member is again movable by energization and de-energization of the rotary solenoid. Preferably, the moving member is a multi-lobed cam having the same number of lobes as the rotor has poles. An anti-overdrive device is also preferably provided for preventing overdrive in the forward direction or a reverse rotation of the moving member and for precisely aligning the moving member.

  9. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  10. Test Driving the Toyota Mirai

    Broader source: Energy.gov [DOE]

    Watch a video of Energy Secretary Ernest Moniz test driving the Toyota Mirai, the first fuel cell electric vehicle available for sale.

  11. Optomechanical Entanglement under Pulse Drive

    E-Print Network [OSTI]

    Qing Lin; Bing He

    2015-08-12

    We report a study of optomechanical entanglement under the drive of one or a series of laser pulses with arbitrary detuning and different pulse shapes. Because of the non-existence of system steady state under pulsed driving field, we adopt a different approach from the standard treatment to optomechanical entanglement. The situation of the entanglement evolution in high temperature is also discussed.

  12. Eleventh ARM Science Team Meeting Proceedings, Atlanta, Georgia, March 19-23, 2001 Radar-based Retrievals of Cloud Properties in the Arctic

    E-Print Network [OSTI]

    Shupe, Matthew

    Eleventh ARM Science Team Meeting Proceedings, Atlanta, Georgia, March 19-23, 2001 1 Radar Radiation Measurement (ARM) program Cloud and Radiation Testbed (CART) sites, all techniques discussed here can be applied to measurements taken at the different ARM sites. Briefly summarized here

  13. Southface Energy Institute: Advanced Commercial Buildings Initiative...

    Energy Savers [EERE]

    Fund - Atlanta, GA - Oak Ridge National Laboratory - Oak Ridge, TN - Acuity Brands Lighting - Atlanta, GA - Vermont Energy Investment Corp - Burlington, VT - Georgia Power-...

  14. Review of Multi-Person Exposure Calls to a Regional Poison Control Center

    E-Print Network [OSTI]

    Morgan, Brent W; Skinner, Carl G; Kleiman, Richard J; Geller, Robert J; Chang, Arthur S

    2010-01-01

    Exposure Calls to a Regional Poison Control Center Brent W.Medicine and the Georgia Poison Center, Atlanta, GA †of Pediatrics and the Georgia Poison Center, Atlanta, GA

  15. Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper Science and Technology; Georgia Institute of Technology, Atlanta, GA.

    E-Print Network [OSTI]

    Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper lignocellulosics to biodiesel fuel Feedstocks ABSTRACT This poster examines the potential of utilizing waste paper

  16. Urban airshed modeling of air quality impacts of alternative transportation fuel use in Los Angeles and Atlanta

    SciTech Connect (OSTI)

    NONE

    1997-12-01

    The main objective of NREL in supporting this study is to determine the relative air quality impact of the use of compressed natural gas (CNG) as an alternative transportation fuel when compared to low Reid vapor pressure (RVP) gasoline and reformulated gasoline (RFG). A table lists the criteria, air toxic, and greenhouse gas pollutants for which emissions were estimated for the alternative fuel scenarios. Air quality impacts were then estimated by performing photochemical modeling of the alternative fuel scenarios using the Urban Airshed Model Version 6.21 and the Carbon Bond Mechanism Version IV (CBM-IV) (Geary et al., 1988) Using this model, the authors examined the formation and transport of ozone under alternative fuel strategies for motor vehicle transportation sources for the year 2007. Photochemical modeling was performed for modeling domains in Los Angeles, California, and Atlanta, Georgia.

  17. PHYSICS OF ELCTRON CYCLOTRON CURRENT DRIVE ON DIII-D

    SciTech Connect (OSTI)

    PETTY,CC; PRATER,R; LUCE,TC; ELLIS,RA; HARVEY,RW; KINSEY,JE; LAO,LL; LOHR,J; MAKOWSKI,MA

    2002-09-01

    OAK A271 PHYSICS OF ELCTRON CYCLOTRON CURRENT DRIVE ON DIII-D. Recent experiments on the DIII-D tokamak have focused on determining the effect of trapped particles on the electron cyclotron current drive (ECCD) efficiency. The measured ECCD efficiency increases as the deposition location is moved towards the inboard midplane or towards smaller minor radius for both co and counter injection. The measured ECCD efficiency also increases with increasing electron density and/or temperature. The experimental ECCD is compared to both the linear theory (Toray-GA) as well as a quasilinear Fokker-Planck model (CQL3D). The experimental ECCD is found to be in better agreement with the more complete Fokker-Planck calculation, especially for cases of high rf power density and/or loop voltage. The narrow width of the measured ECCD profile is consistent with only low levels of radial transport for the current carrying electrons.

  18. Driving Safely In Smart Cars

    E-Print Network [OSTI]

    Puri, Anuj; Varaiya, Pravin

    1995-01-01

    Control of the Lead Car of a Platoon. IEEE Transactions on1993. Var93 P.Varaiya. Smart Cars on Smart Roads: ProblemsDriving Safely in Smart Cars Anuj Puri, Pravin Varaiya

  19. Upgrading coal plant damper drives

    SciTech Connect (OSTI)

    Hood, N.R.; Simmons, K. [Alamaba Power (United States)

    2009-11-15

    The replacement of damper drives on two coal-fired units at the James H. Miller Jr. electric generating plant by Intelligent Contrac electric rotary actuators is discussed. 2 figs.

  20. Adjustable Speed Drive Industrial Applications 

    E-Print Network [OSTI]

    Poole, J. N.

    1989-01-01

    Electric motors are significant users of electricity in the United States. Approximately 66 percent of the total electricity in the U.S. is used by electric motors. Electronic adjustable speed drives (ASDs) can save energy, lower maintenance cost...

  1. Direct drive field actuator motors

    DOE Patents [OSTI]

    Grahn, Allen R. (Salt Lake City, UT)

    1998-01-01

    A positive-drive field actuator motor including a stator carrying at least one field actuator which changes in dimension responsive to application of an energy field, and at least one drive shoe movable by the dimensional changes of the field actuator to contact and move a rotor element with respect to the stator. Various embodiments of the motor are disclosed, and the rotor element may be moved linearly or arcuately.

  2. Direct drive field actuator motors

    DOE Patents [OSTI]

    Grahn, A.R.

    1998-03-10

    A positive-drive field actuator motor is described which includes a stator carrying at least one field actuator which changes in dimension responsive to application of an energy field, and at least one drive shoe movable by the dimensional changes of the field actuator to contact and move a rotor element with respect to the stator. Various embodiments of the motor are disclosed, and the rotor element may be moved linearly or arcuately. 62 figs.

  3. Low backlash direct drive actuator

    DOE Patents [OSTI]

    Kuklo, T.C.

    1994-10-25

    A low backlash direct drive actuator is described which comprises a motor such as a stepper motor having at least 200 steps per revolution; a two part hub assembly comprising a drive hub coaxially attached to the shaft of the motor and having a plurality of drive pins; a driven hub having a plurality of bores in one end thereof in alignment with the drive pins in the drive hub and a threaded shaft coaxially mounted in an opposite end of the driven hub; and a housing having a central bore therein into which are fitted the drive hub and driven hub, the housing having a motor mount on one end thereof to which is mounted the stepper motor, and a closed end portion with a threaded opening therein coaxial with the central bore in the housing and receiving therein the threaded shaft attached to the driven hub. Limit switches mounted to the housing cooperate with an enlarged lip on the driven hub to limit the lateral travel of the driven hub in the housing, which also acts to limit the lateral travel of the threaded shaft which functions as a lead screw. 10 figs.

  4. Vehicle Technologies Office: 2014 Electric Drive Technologies...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vehicle Technologies Office: 2014 Electric Drive Technologies Annual Progress Report Vehicle Technologies Office: 2014 Electric Drive Technologies Annual Progress Report The...

  5. QER - Comment of Electric Drive Transportation Association |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Drive Transportation Association QER - Comment of Electric Drive Transportation Association From: Genevieve Cullen gcullen@electricdrive.org Sent: Friday, October 10, 2014 11:58...

  6. Grand Challenge Portfolio: Driving Innovations in Industrial...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Grand Challenge Portfolio: Driving Innovations in Industrial Energy Efficiency, January 2011 Grand Challenge Portfolio: Driving Innovations in Industrial Energy Efficiency, January...

  7. Drive reconfiguration mechanism for tracked robotic vehicle

    DOE Patents [OSTI]

    Willis, W. David (Idaho Falls, ID)

    2000-01-01

    Drive reconfiguration apparatus for changing the configuration of a drive unit with respect to a vehicle body may comprise a guide system associated with the vehicle body and the drive unit which allows the drive unit to rotate about a center of rotation that is located at about a point where the drive unit contacts the surface being traversed. An actuator mounted to the vehicle body and connected to the drive unit rotates the drive unit about the center of rotation between a first position and a second position.

  8. Anomalous-viscosity current drive

    DOE Patents [OSTI]

    Stix, T.H.; Ono, M.

    1986-04-25

    The present invention relates to a method and apparatus for maintaining a steady-state current for magnetically confining the plasma in a toroidal magnetic confinement device using anomalous viscosity current drive. A second aspect of this invention relates to an apparatus and method for the start-up of a magnetically confined toroidal plasma.

  9. Economic evaluation of the Annual Cycle Energy System. Volume I. Executive summary. Final report. [In Minneapolis, Atlanta, and Philadelphia

    SciTech Connect (OSTI)

    Not Available

    1980-05-01

    The objective of this study is to determine the energy effectiveness and the economic viability of the ACES concept. Three different classes of building are investigated, namely: single-family residence; multi-family residence; and commercial office building. The application of ACES to each of these building types is studied in three different climatic regions: Minneapolis, Atlanta, and Philadelphia. Computer programs - ACESIM for the residences and CACESS for the office building - were used, each comprised of four modules: loads; design; simulation; and economic. For each building type in each geographic location, the economic evaluation of the ACES is based on a comparison of the present worth of the ACES to the present worth of a number of conventional systems. The results of this analysis indicate that the economic viability of the ACES is very sensitive to the assumed value of the property tax, maintenace cost, and fuel-escalation rates, while it is relatively insensitive to the assumed values of other parameters. Fortunately, any conceivable change in the fuel-escalation rates would tend to increase the viability of the ACES concept. An increase in the assumed value of the maintenance cost or property tax would tend to make the ACES concept less viable; a decrease in either would tend to make the ACES concept more viable. The detailed results of this analysis are given in Section 5.4 of Volume II. 2 figures, 21 tables.

  10. Demonstration of forward inter-band tunneling in GaN by polarization engineering

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth

    2011-12-05

    We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm{sup 2} at 10 mV, and 17.7 A/cm{sup 2} peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

  11. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  12. High School Students’ Perceptions of Motivations for Cyberbullying: An Exploratory Study

    E-Print Network [OSTI]

    Varjas, Kris; Talley, Jasmaine; Meyers, Joel; Parris, Leandra; Cutts, Hayley

    2010-01-01

    Climate, and Classroom Management, Atlanta, GA SupervisingCyberbullying and Classroom Management and the Educational

  13. Redundant Arrays of IDE Drives

    E-Print Network [OSTI]

    D. A. Sanders; L. M. Cremaldi; V. Eschenburg; C. N. Lawrence; C. Riley; D. J. Summers; D. L. Petravick

    2002-12-05

    The next generation of high-energy physics experiments is expected to gather prodigious amounts of data. New methods must be developed to handle this data and make analysis at universities possible. We examine some techniques that use recent developments in commodity hardware. We test redundant arrays of integrated drive electronics (IDE) disk drives for use in offline high-energy physics data analysis. IDE redundant array of inexpensive disks (RAID) prices now equal the cost per terabyte of million-dollar tape robots! The arrays can be scaled to sizes affordable to institutions without robots and used when fast random access at low cost is important. We also explore three methods of moving data between sites; internet transfers, hot pluggable IDE disks in FireWire cases, and writable digital video disks (DVD-R).

  14. Optimization of condensing gas drive 

    E-Print Network [OSTI]

    Lofton, Larry Keith

    1977-01-01

    - cal, undersaturated reservoir with gas being injected into the crest and oil being produced from the base of the structure. Fractional oil re- covery at gas breakthrough proved to be less sensitive to changes in oil withdrawal rates as the gas... injection pressure was increased. The validity of the model was established by accurately simulating several low pressure gas drives conducted in the laboratory. Oil recoveries at gas breakthrough using the model compared closely with those recoveries...

  15. What If Cars Could Drive Themselves?

    E-Print Network [OSTI]

    Shladover, Steven E.

    2000-01-01

    What If Cars Could Drive Themselves? BY STEVEN E.SHLADOVER E V E N W H E N cars were still young, futuristssome of the implications of cars that could drive t h e m s

  16. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  17. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  18. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  19. Consider Steam Turbine Drives for Rotating Equipment | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Steam Turbine Drives for Rotating Equipment Consider Steam Turbine Drives for Rotating Equipment This tip sheet outlines the benefits of steam turbine drives for rotating equipment...

  20. US DRIVE Vehicle Systems and Analysis Technical Team Roadmap...

    Broader source: Energy.gov (indexed) [DOE]

    DRIVE Technical Teams in determining performance goals and validation metrics. vsattroadmapjune2013.pdf More Documents & Publications US DRIVE Driving Research and Innovation...

  1. Vehicle Technologies Office: U.S. DRIVE 2014 Technical Accomplishments...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vehicle Technologies Office: U.S. DRIVE 2014 Technical Accomplishments Report Vehicle Technologies Office: U.S. DRIVE 2014 Technical Accomplishments Report The U.S. DRIVE 2014...

  2. Fluid cooled vehicle drive module

    DOE Patents [OSTI]

    Beihoff, Bruce C.; Radosevich, Lawrence D.; Meyer, Andreas A.; Gollhardt, Neil; Kannenberg, Daniel G.

    2005-11-15

    An electric vehicle drive includes a support may receive one or more power electronic circuits. The support may aid in removing heat from the circuits through fluid circulating through the support. The support, in conjunction with other packaging features may form a shield from both external EM/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as improved terminal configurations. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

  3. Traction Drive Systems Breakout Group

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE- Non-ResidentialAlliantPGEDepartment ofpresentationTRACTION DRIVE SYSTEM

  4. ARM - SGP Rural Driving Hazards

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Comments?govInstrumentsnoaacrnBarrow, Alaska OutreachCalendarPressExtended Facility SGP RelatedRural Driving

  5. Dimensional crossover and weak localization in a 90 nm n-GaAs thin film A. M. Gilbertson,1

    E-Print Network [OSTI]

    Bashir, Rashid

    for Materials Innovation, Washington University in St. Louis, 1 Brookings Drive, St. Louis, Missouri 63130, USA diffusive transport at the nanoscale.1 Alternatively, ma- terials with lower , such as GaAs, offer in terms of cost and processing complexity and are also appli- cable to the EEC effect. Accordingly, we

  6. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    IL (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United States) Battelle Memorial...

  7. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Photon Source, Argonne, IL (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric System Research Bartlesville Project Office, OK (United...

  8. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  9. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  10. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  11. Electric vehicle drive train with contactor protection

    DOE Patents [OSTI]

    Konrad, Charles E. (Roanoke, VA); Benson, Ralph A. (Roanoke, VA)

    1994-01-01

    A drive train for an electric vehicle includes a traction battery, a power drive circuit, a main contactor for connecting and disconnecting the traction battery and the power drive circuit, a voltage detector across contacts of the main contactor, and a controller for controlling the main contactor to prevent movement of its contacts to the closed position when the voltage across the contacts exceeds a predetermined threshold, to thereby protect the contacts of the contactor. The power drive circuit includes an electric traction motor and a DC-to-AC inverter with a capacitive input filter. The controller also inhibits the power drive circuit from driving the motor and thereby discharging the input capacitor if the contacts are inadvertently opened during motoring. A precharging contactor is controlled to charge the input filter capacitor prior to closing the main contactor to further protect the contacts of the main contactor.

  12. Electric vehicle drive train with contactor protection

    DOE Patents [OSTI]

    Konrad, C.E.; Benson, R.A.

    1994-11-29

    A drive train for an electric vehicle includes a traction battery, a power drive circuit, a main contactor for connecting and disconnecting the traction battery and the power drive circuit, a voltage detector across contacts of the main contactor, and a controller for controlling the main contactor to prevent movement of its contacts to the closed position when the voltage across the contacts exceeds a predetermined threshold, to thereby protect the contacts of the contactor. The power drive circuit includes an electric traction motor and a DC-to-AC inverter with a capacitive input filter. The controller also inhibits the power drive circuit from driving the motor and thereby discharging the input capacitor if the contacts are inadvertently opened during motoring. A precharging contactor is controlled to charge the input filter capacitor prior to closing the main contactor to further protect the contacts of the main contactor. 3 figures.

  13. A primaldual schema based approximation algorithm for the element connectivity

    E-Print Network [OSTI]

    Williamson, David P.

    at San Diego, Computer Science and Engineering Department, La Jolla, CA 92093 Vijay V. Vazirani 2 Georgia Institute of Technology, College of Computing, 801 Atlantic Drive, Atlanta, GA 30332 David P. Williamson IBM, since it models a realistic situation. Preprint submitted to Elsevier Science 14 June 2002 #12; 1

  14. 3D Systems Packaging Research Center DELIVERING BREAKTHROUGH IDEAS TO INDUSTRY

    E-Print Network [OSTI]

    Li, Mo

    3D Systems Packaging Research Center DELIVERING BREAKTHROUGH IDEAS TO INDUSTRY 3D Systems Packaging-costdecouplingcapacitorsonsilicon,glassandorganic packages ·Novel nanocomposite dielectrics for low TCC, low loss and highpermittivity ·Demonstration of size #12;3D Systems Packaging Research Center 813 Ferst Drive, NW, Atlanta, GA 30332 · 404.894.9097 fax

  15. The Design and Use of a Generic Context Server Daniel Salber and Gregory D. Abowd

    E-Print Network [OSTI]

    Abowd, Gregory D.

    -user settings and exploiting context history. 1.2.Sources of Context We distinguish four broad categories source of context information: information about people such as the presence of people, their identity, College of Computing Georgia Institute of Technology 801 Atlantic Drive, Atlanta, GA 30332-0280 {salber

  16. Centerless-drive solar collector system

    SciTech Connect (OSTI)

    Butler, B. L.

    1985-12-24

    A parabolic-trough solar collector system is disclosed, with each collector driven to track the sun using a ring driven in centerless fashion. The parabolic troughs are made of laminated plywood or molded or formed of plastics or metals. The drive motor moves a flexible belt, i.e., chain or cable, which is routed about the drive ring on each collector. The motion of the cable moves all drive rings together to track the sun. A photodetector senses the position of the sun and provides the signal needed to drive the collectors in the correct direction.

  17. Marketing & Driving Demand: Social Media Tools & Strategies ...

    Broader source: Energy.gov (indexed) [DOE]

    January 16, 2011 Conference Call transcript: "Marketing & Driving Demand: Social Media Tools & Strategies," from the U.S. Department of Energy. Conference call transcript More...

  18. Advanced Electric Drive Vehicles ? A Comprehensive Education...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    -- Washington D.C. tiarravt034ferdowsi2010o.pdf More Documents & Publications Advanced Electric Drive Vehicles A Comprehensive Education, Training, and Outreach Program...

  19. Advanced Electric Drive Vehicles ? A Comprehensive Education...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Meeting arravt034tiferdowsi2012o.pdf More Documents & Publications Advanced Electric Drive Vehicles A Comprehensive Education, Training, and Outreach Program...

  20. Advanced Electric Drive Vehicles ? A Comprehensive Education...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Peer Evaluation arravt034tiferdowsi2011p.pdf More Documents & Publications Advanced Electric Drive Vehicles A Comprehensive Education, Training, and Outreach Program...

  1. Vehicle Technologies Office: 2014 Electric Drive Technologies...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    automotive technologies under development. Research is focused on developing power electronics (PE), electric motor, and traction drive system (TDS) technologies that will reduce...

  2. High Efficiency Driving Electronics for General Illumination...

    Office of Scientific and Technical Information (OSTI)

    Driving Electronics for General Illumination LED Luminaires Upadhyay, Anand 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION New generation of standalone LED driver platforms...

  3. Grand Challenge Portfolio: Driving Innovations in Industrial...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8 Grand Challenge Portfolio: Driving Innovations in Industrial Energy Efficiency, January 2011 - pg 8 grandchallengesportfoliopg8.pdf More Documents & Publications Grand...

  4. Grand Challenge Portfolio: Driving Innovations in Industrial...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    9 Grand Challenge Portfolio: Driving Innovations in Industrial Energy Efficiency, January 2011 - pg 9 grandchallengesportfoliopg9.pdf More Documents & Publications Grand...

  5. Grand Challenge Portfolio: Driving Innovations in Industrial...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6 Grand Challenge Portfolio: Driving Innovations in Industrial Energy Efficiency, January 2011 - pg 6 grandchallengesportfoliopg6.pdf More Documents & Publications Grand...

  6. Fuel Economy: What Drives Consumer Choice?

    E-Print Network [OSTI]

    Turrentine, Tom; Kurani, Kenneth S; Heffner, Reid R.

    2008-01-01

    Car Buyers and Fuel Economy? ” Energy Policy, vol. 35, 2007.Fuel Economy: What Drives Consumer Choice? BY TOMyou think about fuel economy? ” Rather, we listened closely

  7. Fuel Economy: What Drives Consumer Choice?

    E-Print Network [OSTI]

    Turrentine, Tom; Kurani, Kenneth; Heffner, Rusty

    2007-01-01

    Car Buyers and Fuel Economy? ” Energy Policy, vol. 35, 2007.Fuel Economy: What Drives Consumer Choice? BY TOMyou think about fuel economy? ” Rather, we listened closely

  8. Electric-Drive Vehicle Basics (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2011-04-01

    Describes the basics of electric-drive vehicles, including hybrid electric vehicles, plug-in hybrid electric vehicles, all-electric vehicles, and the various charging options.

  9. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  10. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  11. USD E'16 ATLANTA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory ofDidDevelopmentat LENA| ReactionSite Map SiteUS ITER Jobs

  12. DRIVE Analysis Tool Generates Custom Vehicle Drive Cycles Based on Real-World Data (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-04-01

    This fact sheet from the National Renewable Energy Laboratory describes the Drive-Cycle Rapid Investigation, Visualization, and Evaluation (DRIVE) analysis tool, which uses GPS and controller area network data to characterize vehicle operation and produce custom vehicle drive cycles, analyzing thousands of hours of data in a matter of minutes.

  13. METHODS OF RADIO-FREQUENCY CURRENT DRIVE

    E-Print Network [OSTI]

    -670 Radio-frequency waves can penetrate thermonuclear plasmas, depositing momentum and energy with great. INTRODUCTION Using radio-frequency (rf) waves to drive the toroidal current in tokamak reactors is attractiveMETHODS OF RADIO-FREQUENCY CURRENT DRIVE N. J. FISCH* Princeton Plasma Physics Laboratory

  14. The MITRE Corporation 7515 Colshire Drive

    E-Print Network [OSTI]

    Tritium JASON The MITRE Corporation 7515 Colshire Drive McLean, Virginia 22102-7508 (703) 983 ORGANIZATION REPORT NUMBER The MITRE Corporation JASON Program Office 7515 Colshire Drive McLean, Virginia of tritium per year of operation which must be bred as part of the overall reactor cycle. Traditionally

  15. www.spinalcolumn.org12 Spinal Column DrivingCoachFeature

    E-Print Network [OSTI]

    of Technology and an Atlanta-based startup company called CentrafuseTM ,which designs automotive software more function- ality in a vehicle using the company's software platform, which can run on a touch

  16. Control rod drive hydraulic system

    DOE Patents [OSTI]

    Ose, Richard A. (San Jose, CA)

    1992-01-01

    A hydraulic system for a control rod drive (CRD) includes a variable output-pressure CR pump operable in a charging mode for providing pressurized fluid at a charging pressure, and in a normal mode for providing the pressurized fluid at a purge pressure, less than the charging pressure. Charging and purge lines are disposed in parallel flow between the CRD pump and the CRD. A hydraulic control unit is disposed in flow communication in the charging line and includes a scram accumulator. An isolation valve is provided in the charging line between the CRD pump and the scram accumulator. A controller is operatively connected to the CRD pump and the isolation valve and is effective for opening the isolation valve and operating the CRD pump in a charging mode for charging the scram accumulator, and closing the isolation valve and operating the CRD pump in a normal mode for providing to the CRD through the purge line the pressurized fluid at a purge pressure lower than the charging pressure.

  17. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  18. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  19. Risks of using AP locations discovered through war driving

    E-Print Network [OSTI]

    Kotz, David

    Risks of using AP locations discovered through war driving Minkyong Kim, Jeffrey J. Fielding the actual locations are often unavailable, they use estimated locations from war driving estimated through war driving. War driving is the process of collecting Wi-Fi beacons by driving or walking

  20. Chapter 18: Variable Frequency Drive Evaluation Protocol

    SciTech Connect (OSTI)

    Romberger, J.

    2014-11-01

    An adjustable-speed drive (ASD) includes all devices that vary the speed of a rotating load, including those that vary the motor speed and linkage devices that allow constant motor speed while varying the load speed. The Variable Frequency Drive Evaluation Protocol presented here addresses evaluation issues for variable-frequency drives (VFDs) installed on commercial and industrial motor-driven centrifugal fans and pumps for which torque varies with speed. Constant torque load applications, such as those for positive displacement pumps, are not covered by this protocol. Other ASD devices, such as magnetic drive, eddy current drives, variable belt sheave drives, or direct current motor variable voltage drives, are also not addressed. The VFD is by far the most common type of ASD hardware. With VFD speed control on a centrifugal fan or pump motor, energy use follows the affinity laws, which state that the motor electricity demand is a cubic relationship to speed under ideal conditions. Therefore, if the motor runs at 75% speed, the motor demand will ideally be reduced to 42% of full load power; however, with other losses it is about 49% of full load power.

  1. Wind turbine ring/shroud drive system

    DOE Patents [OSTI]

    Blakemore, Ralph W.

    2005-10-04

    A wind turbine capable of driving multiple electric generators having a ring or shroud structure for reducing blade root bending moments, hub loads, blade fastener loads and pitch bearing loads. The shroud may further incorporate a ring gear for driving an electric generator. In one embodiment, the electric generator may be cantilevered from the nacelle such that the gear on the generator drive shaft is contacted by the ring gear of the shroud. The shroud also provides protection for the gearing and aids in preventing gear lubricant contamination.

  2. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  3. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  4. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  5. Phase modulated rotor angle encoder for switched reluctance motor drive 

    E-Print Network [OSTI]

    Mahajan, Shailendra

    1993-01-01

    Advantages of the switched reluctance motor (SRM) drive makes it an attractive candidate for replacing many adjustable speed ac and dc drives, in both industrial and consumer applications. The switched reluctance drives ...

  6. Test Drive: Honda FCX Clarity | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Test Drive: Honda FCX Clarity Test Drive: Honda FCX Clarity May 14, 2010 - 10:52am Addthis A member of the Energy Empowers team takes the Honda FCX Clarity for a drive outside the...

  7. Universal power transistor base drive control unit

    DOE Patents [OSTI]

    Gale, Allan R. (Allen Park, MI); Gritter, David J. (Racine, WI)

    1988-01-01

    A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

  8. Universal power transistor base drive control unit

    DOE Patents [OSTI]

    Gale, A.R.; Gritter, D.J.

    1988-06-07

    A saturation condition regulator system for a power transistor is disclosed which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition. 2 figs.

  9. Consider Steam Turbine Drives for Rotating Equipment

    SciTech Connect (OSTI)

    Not Available

    2006-01-01

    This revised ITP tip sheet on steam turbine drives for rotating equipment provides how-to advice for improving the system using low-cost, proven practices and technologies.

  10. Adjustable Speed Drive Power Quality Evaluation Program

    E-Print Network [OSTI]

    Strangas, Elias G.

    Unruh from Consumers Power provided technical guidance, while Ms. Heidi Muir from Demand Side Management and managed by Detroit Edi- son, Consumers Power and Drive manufacturers to evaluate the operational charac

  11. Evolution: Geology and climate drive diversification

    E-Print Network [OSTI]

    Gillespie, RG; Roderick, GK

    2014-01-01

    on 7 May 2014. EVO LU TI O N Geology and climate driveIslands exemplify how geology and climate can interact toevents, the dynamics of geology and climate can be powerful

  12. Solid State AC Motor Drives - Conservation Perspectives 

    E-Print Network [OSTI]

    Mohan, N.; Ferraro, R. J.

    1982-01-01

    Variable Frequency Solid-State Inverters: can control the speed of ac motors by producing adjustable frequency ac voltage, with an enormous potential for energy conservation in pumps and air handling systems. 3. Other Variable Frequency Drives: include...

  13. 101 Innovation Drive San Jose, CA 95134

    E-Print Network [OSTI]

    Moshovos, Andreas

    101 Innovation Drive San Jose, CA 95134 www.altera.com Nios II Processor Reference Handbook NII5V1 applications, maskwork rights, and copyrights. Altera warrants performance of its semiconductor products ........................................................................... ix About This Handbook

  14. Jefferson Lab Visitor's Center - Driving in Virginia

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Driving in virginia Effective January 1, 2004, all applicants for a driver's license or photo ID card must show proof of U.S. Citizenship or Legal Presence in the United States. A...

  15. Shared Authority Concerns in Automated Driving Applications

    E-Print Network [OSTI]

    Cummings, M.L.

    2014-05-13

    Given the move toward driverless cars, which includes the more short-term goal of driving assistance, what the appropriate shared authority and interaction paradigms should be between human drivers and the automation remains ...

  16. Fuel Economy: What Drives Consumer Choice?

    E-Print Network [OSTI]

    Turrentine, Tom; Kurani, Kenneth; Heffner, Rusty

    2007-01-01

    S. Kurani, “Car Buyers and Fuel Economy? ” Energy Policy,Fuel Economy: What Drives Consumer Choice? BY TOMa car, do they think about fuel costs over time, are they

  17. Frequency modulation drive for a piezoelectric motor

    DOE Patents [OSTI]

    Mittas, Anthony (Albuquerque, NM)

    2001-01-01

    A piezoelectric motor has peak performance at a specific frequency f.sub.1 that may vary over a range of frequencies. A drive system is disclosed for operating such a motor at peak performance without feedback. The drive system consists of the motor and an ac source connected to power the motor, the ac source repeatedly generating a frequency over a range from f.sub.1 -.DELTA.x to f.sub.1 +.DELTA.y.

  18. Direct-drive field actuator motors

    DOE Patents [OSTI]

    Grahn, A.R.

    1995-07-11

    A high-torque, low speed, positive-drive field actuator motor is disclosed including a stator carrying at least one field actuator which changes in dimension responsive to application of an energy field, and at least one drive shoe movable by the dimensional changes of the field actuator to contact and move a rotor element with respect to the stator. Various embodiments of the motor are disclosed, and the rotor element may be moved linearly or arcuately. 37 figs.

  19. Direct-drive field actuator motors

    DOE Patents [OSTI]

    Grahn, Allen R. (Salt Lake City, UT)

    1995-01-01

    A high-torque, low speed, positive-drive field actuator motor including a stator carrying at least one field actuator which changes in dimension responsive to application of an energy field, and at least one drive shoe movable by the dimensional changes of the field actuator to contact and move a rotor element with respect to the stator. Various embodiments of the motor are disclosed, and the rotor element may be moved linearly or arcuately.

  20. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  1. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  2. High-Temperature, Air-Cooled Traction Drive Inverter Packaging...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Temperature, Air-Cooled Traction Drive Inverter Packaging High-Temperature, Air-Cooled Traction Drive Inverter Packaging 2010 DOE Vehicle Technologies and Hydrogen Programs Annual...

  3. US DRIVE Electrochemical Energy Storage Technical Team Roadmap...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electrochemical Energy Storage Technical Team Roadmap US DRIVE Electrochemical Energy Storage Technical Team Roadmap This U.S. DRIVE electrochemical energy storage roadmap...

  4. Countries Launch Initiative to Drive Energy Efficiency in the...

    Office of Environmental Management (EM)

    Countries Launch Initiative to Drive Energy Efficiency in the Commercial and Industrial Sectors Countries Launch Initiative to Drive Energy Efficiency in the Commercial and...

  5. How Exhaust Emissions Drive Diesel Engine Fuel Efficiency | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    How Exhaust Emissions Drive Diesel Engine Fuel Efficiency How Exhaust Emissions Drive Diesel Engine Fuel Efficiency 2004 Diesel Engine Emissions Reduction (DEER) Conference...

  6. Strategies for Marketing and Driving Demand for Commercial Financing...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Strategies for Marketing and Driving Demand for Commercial Financing Products Strategies for Marketing and Driving Demand for Commercial Financing Products Better Buildings...

  7. Improving Motor and Drive System Performance - A Sourcebook for...

    Broader source: Energy.gov (indexed) [DOE]

    sourcebook outlines opportunities to improve motor and drive systems performance. The sourcebook is divided into four main sections: Motor and Drive System Basics: Summarizes...

  8. Computer-Aided Engineering for Electric Drive Vehicle Batteries...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Computer-Aided Engineering for Electric Drive Vehicle Batteries (CAEBAT) Computer-Aided Engineering for Electric Drive Vehicle Batteries (CAEBAT) 2011 DOE Hydrogen and Fuel Cells...

  9. Electric Drive Component Manufacturing: Magna E-Car Systems of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Electric Drive Component Manufacturing: Magna E-Car Systems of America, Inc. Electric Drive Component Manufacturing: Magna E-Car Systems of...

  10. Defining Real World Drive Cycles to Support APRF Technology Evaluation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Real World Drive Cycles to Support APRF Technology Evaluations Defining Real World Drive Cycles to Support APRF Technology Evaluations 2012 DOE Hydrogen and Fuel Cells Program and...

  11. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solid Polymer Batteries for Electric Drive Vehicles High-Voltage Solid Polymer Batteries for Electric Drive Vehicles 2012 DOE Hydrogen and Fuel Cells Program and Vehicle...

  12. Tips: Buying and Driving Fuel Efficient and Alternative Fuel...

    Office of Environmental Management (EM)

    & Fuel Vehicles & Fuels Tips: Buying and Driving Fuel Efficient and Alternative Fuel Vehicles Tips: Buying and Driving Fuel Efficient and Alternative Fuel Vehicles...

  13. Airlines & Aviation Alternative Fuels: Our Drive to Be Early...

    Energy Savers [EERE]

    Airlines & Aviation Alternative Fuels: Our Drive to Be Early Market Adopters Airlines & Aviation Alternative Fuels: Our Drive to Be Early Market Adopters Plenary III: Early Market...

  14. Heavy Duty & Medium Duty Drive Cycle Data Collection for Modeling...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Heavy Duty & Medium Duty Drive Cycle Data Collection for Modeling Expansion Heavy Duty & Medium Duty Drive Cycle Data Collection for Modeling Expansion 2009 DOE Hydrogen Program...

  15. Light-Duty Reactivity Controlled Compression Ignition Drive Cycle...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Light-Duty Reactivity Controlled Compression Ignition Drive Cycle Fuel Economy and Emissions Estimates Light-Duty Reactivity Controlled Compression Ignition Drive Cycle Fuel...

  16. Electric Drive and Advanced Battery and Components Testbed (EDAB...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    vss033carlson2011o.pdf More Documents & Publications Electric Drive and Advanced Battery and Components Testbed (EDAB) Electric Drive and Advanced Battery and Components...

  17. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  18. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  19. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  20. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  1. Virtual Driving and Eco-Simulation VR City Modeling, Drive Simulation, and Ecological Habits

    E-Print Network [OSTI]

    @asu.edu Keywords: Drive Simulation, Traffic Visualization, Virtual Reality, Driving Behavior, Vehicle Emissions behavior, and vehicle emissions. The project is a part of an interdisciplinary multi- year academic Simulator is illustrated. A research study of driver behavior and vehicle emissions is detailed. Next

  2. Gears and belt drives for non-uniform transmission

    E-Print Network [OSTI]

    Nawratil, Georg

    Gears and belt drives for non-uniform transmission Hellmuth Stachel stachel of gearing 2. Non-uniform belt drives 3. On the existence of strict non-uniform belt drives EUCOMES08. Finsterwalder's principle of gearing The driving wheel 1 rotates about O1 through 1, the out-put wheel 2 rotates

  3. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  4. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

    SciTech Connect (OSTI)

    Yerino, Christopher D.; Jung, Daehwan; Lee, Minjoo Larry; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.; Schneider, Christian; Unsleber, Sebastian; Vo, Minh; Kamp, Martin; Höfling, Sven

    2014-12-22

    Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6??eV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

  5. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  6. GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LED's

    SciTech Connect (OSTI)

    Sandra Schujman; Leo Schowalter

    2010-10-15

    The objective of this project was to develop and then demonstrate the efficacy of a costeffective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this “GaN-ready” substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded AlxGa1-xN layers on top. Pseudomorphic AlxGa1-xN epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 108 cm-2 while the pseudomorphic LEDs have TDD ? 105 cm-2. The resulting TDD, when grading the AlxGa1-xN layer all the way to pure GaN to produce a “GaN-ready” substrate, has varied between the mid 108 down to the 106 cm-2. These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

  7. Flow Cytometry Laboratory 7703 Floyd Curl Drive

    E-Print Network [OSTI]

    Nicholson, Bruce J.

    Flow Cytometry Laboratory 7703 Floyd Curl Drive San Antonio, Tx. 78229 Customer Satisfaction Survey Dear UTHSCSA Flow Cytometry Laboratory User: As a College of American Pathologist (CAP) accredited Laboratory, the UTHSCSA Flow Cytometry Laboratory is sending this survey to our client as an aid in our

  8. Oscillation control system for electric motor drive

    DOE Patents [OSTI]

    Slicker, James M. (Union Lake, MI); Sereshteh, Ahmad (Union Lake, MI)

    1988-01-01

    A feedback system for controlling mechanical oscillations in the torsionally complaint drive train of an electric or other vehicle. Motor speed is converted in a processor to estimate state signals in which a plant model which are used to electronically modify thetorque commands applied to the motor.

  9. Cost of transitionless driving and work output

    E-Print Network [OSTI]

    Yuanjian Zheng; Steve Campbell; Gabriele De Chiara; Dario Poletti

    2015-09-07

    Unitary processes allow for the transfer of work to and from Hamiltonian systems. However, to achieve non-zero power for the practical extraction of work, these processes must be performed within a finite-time, which inevitably induces excitations in the system. We characterize this by introducing a measure that indicates the need for an external driving to preserve quantum adiabaticity. We show that depending on the time-scale of the process and the physical realization of the external driving employed, the use of transitionless quantum driving (TQD) to extract more work is not always effective. Furthermore, by virtue of the two-time energy measurement definition of quantum work, we also demonstrate that the cost of TQD can be significantly reduced by selecting a restricted form of the driving Hamiltonian that depends on the outcome of the first energy measurement. We apply our analysis to systems ranging from a two-level Landau-Zener problem to a many-body quantum Ising chain.

  10. Oscillation control system for electric motor drive

    DOE Patents [OSTI]

    Slicker, J.M.; Sereshteh, A.

    1988-08-30

    A feedback system for controlling mechanical oscillations in the torsionally complaint drive train of an electric or other vehicle. Motor speed is converted in a processor to estimate state signals in which a plant model which are used to electronically modify the torque commands applied to the motor. 5 figs.

  11. What drives option prices? Frdric Abergel1

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    . The study reveals that while the modeling of stochastic volatility gives more robust models, the market does 2 Theoretical framework 4 3 Intraday joint dynamics of option and underlying prices 5 3.1 EppsWhat drives option prices? Frédéric Abergel1 and Riadh Zaatour2 Chair of Quantitative Finance Ecole

  12. Modeling and Driving Piezoelectric Resonant Blade Elements

    E-Print Network [OSTI]

    Modeling and Driving Piezoelectric Resonant Blade Elements Sam Ben-Yaakov* and Natan Krihely Power@ee.bgu.ac.il ; Website: http://www.ee.bgu.ac.il/~pel Abstract-- Piezoelectric Resonant Blade elements (PRB) are useful in applications such as light choppers, laser beam scanners, fans and others. Three methods are proposed

  13. What's Driving Oil Prices? James L. Smith

    E-Print Network [OSTI]

    O'Donnell, Tom

    1 What's Driving Oil Prices? James L. Smith Cary M. Maguire Chair in Oil & Gas Management Critical Issues in Energy Federal Reserve Bank of Dallas November 2, 2006 The Price of OPEC Oil ($/bbl) $0 $20 $40 $60 $80 1970 1975 1980 1985 1990 1995 2000 2005 Real Price ($2005) #12;2 Hubbert's Curve (Peak Oil

  14. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  15. Secondary structure and domain architecture of the 23S and 5S rRNAs

    E-Print Network [OSTI]

    Williams, Loren

    Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA, 4 Department of Biology and Biochemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA 30332, USA, 2 Center for Ribosomal Origins

  16. On the effect of dust particles on global CCN and cloud droplet number1 V.A. Karydis1

    E-Print Network [OSTI]

    Nenes, Athanasios

    Institute of Technology, Atlanta,4 GA5 3 SABIC-Innovative Plastics, Selkirk, NY6 4 NASA Goddard Space Flight, Georgia Institute of Technology, Atlanta, GA3 2 School of Chemical and Biomolecular Engineering, Georgia

  17. Atmos. Chem. Phys., 11, 86618676, 2011 www.atmos-chem-phys.net/11/8661/2011/

    E-Print Network [OSTI]

    Meskhidze, Nicholas

    of Technology, Atlanta, GA, 30332, USA 2School of Earth & Atmospheric Sciences, Georgia Institute of Technology Atlanta, GA, 30332, USA *now at: SABIC-Innovative Plastics, 1 Noryl Avenue, Selkirk, NY, 12158, USA

  18. Indoor Air Quality Assessment of the San Francisco Federal Building

    E-Print Network [OSTI]

    Apte, Michael

    2010-01-01

    References ASHRAE. 1999. ANSI/ASHRAE Standard 129-199,Atlanta GA. ASHRAE. 2004. ANSI/ASHRAE Standard 55, ThermalAtlanta GA. ASHRAE. 2007. ANSI/ASHRAE Standard 62.1,

  19. The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

    SciTech Connect (OSTI)

    Massabuau, F. C.-P., E-mail: fm350@cam.ac.uk; Oehler, F.; Pamenter, S. K.; Thrush, E. J.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A. [Department of Materials Science and Metallurgy, University of Cambridge, 22 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Davies, M. J.; Dawson, P. [Photon Science Institute, School of Physics and Astronomy, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kovács, A.; Dunin-Borkowski, R. E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Leo-Brandt- Straße, D-52425 Jülich (Germany); Williams, T.; Etheridge, J. [Monash Centre for Electron Microscopy, Monash University, Clayton Campus, VIC 3800 (Australia); Hopkins, M. A.; Allsopp, D. W. E. [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom)

    2014-09-15

    The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been investigated. Two mechanisms responsible for the structural degradation of the multiple quantum well (MQW) active region were identified. It was found that during the growth of the p-type GaN capping layer, loss of part of the active region enclosed within a trench defect occurred, affecting the top-most QWs in the MQW stack. Indium platelets and voids were also found to form preferentially at the bottom of the MQW stack. The presence of high densities of trench defects in the LEDs was found to relate to a significant reduction in photoluminescence and electroluminescence emission efficiency, for a range of excitation power densities and drive currents. This reduction in emission efficiency was attributed to an increase in the density of non-radiative recombination centres within the MQW stack, believed to be associated with the stacking mismatch boundaries which form part of the sub-surface structure of the trench defects. Investigation of the surface of green-emitting QW structures found a two decade increase in the density of trench defects, compared to its blue-emitting counterpart, suggesting that the efficiency of green-emitting LEDs may be strongly affected by the presence of these defects. Our results are therefore consistent with a model that the “green gap” problem might relate to localized strain relaxation occurring through defects.

  20. Drive piston assembly for a valve actuator assembly

    DOE Patents [OSTI]

    Sun, Zongxuan (Troy, MI)

    2010-02-23

    A drive piston assembly is provided that is operable to selectively open a poppet valve. The drive piston assembly includes a cartridge defining a generally stepped bore. A drive piston is movable within the generally stepped bore and a boost sleeve is coaxially disposed with respect to the drive piston. A main fluid chamber is at least partially defined by the generally stepped bore, drive piston, and boost sleeve. First and second feedback chambers are at least partially defined by the drive piston and each are disposed at opposite ends of the drive piston. At least one of the drive piston and the boost sleeve is sufficiently configured to move within the generally stepped bore in response to fluid pressure within the main fluid chamber to selectively open the poppet valve. A valve actuator assembly and engine are also provided incorporating the disclosed drive piston assembly.

  1. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  2. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  3. Photo-induced water oxidation at the aqueous GaN (101?0) interface: Deprotonation kinetics of the first proton-coupled electron-transfer step

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ertem, Mehmed Z. [Brookhaven National Lab. (BNL), Upton, NY (United States); Yale Univ., New Haven, CT (United States); Kharche, Neerav [Brookhaven National Lab. (BNL), Upton, NY (United States); Batista, Victor S. [Yale Univ., New Haven, CT (United States); Hybertsen, Mark S. [Brookhaven National Lab. (BNL), Upton, NY (United States); Tully, John C. [Yale Univ., New Haven, CT (United States); Muckerman, James T. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2015-04-03

    Photoeclectrochemical water splitting plays a key role in a promising path to the carbon-neutral generation of solar fuels. Wurzite GaN and its alloys (e.g., GaN/ZnO and InGaN) are demonstrated photocatalysts for water oxidation, and they can drive the overall water splitting reaction when coupled with co-catalysts for proton reduction. In the present work, we investigate the water oxidation mechanism on the prototypical GaN (101?0) surface using a combined ab initio molecular dynamics and molecular cluster model approach taking into account the role of water dissociation and hydrogen bonding within the first solvation shell of the hydroxylated surface. The investigation of free-energy changes for the four proton-coupled electron-transfer (PCET) steps of the water oxidation mechanism shows that the first PCET step for the conversion of –Ga-OH to –Ga-O?? requires the highest energy input. We further examine the sequential PCETs, with the proton transfer (PT) following the electron transfer (ET), and find that photo-generated holes localize on surface –NH sites is thermodynamically more favorable than –OH sites. However, proton transfer from –OH sites with subsequent localization of holes on oxygen atoms is kinetically favored owing to hydrogen bonding interactions at the GaN (101?0)–water interface. We find that the deprotonation of surface –OH sites is the limiting factor for the generation of reactive oxyl radical ion intermediates and consequently for water oxidation.

  4. Integrated Inverter For Driving Multiple Electric Machines

    DOE Patents [OSTI]

    Su, Gui-Jia [Knoxville, TN; Hsu, John S [Oak Ridge, TN

    2006-04-04

    An electric machine drive (50) has a plurality of inverters (50a, 50b) for controlling respective electric machines (57, 62), which may include a three-phase main traction machine (57) and two-phase accessory machines (62) in a hybrid or electric vehicle. The drive (50) has a common control section (53, 54) for controlling the plurality of inverters (50a, 50b) with only one microelectronic processor (54) for controlling the plurality of inverters (50a, 50b), only one gate driver circuit (53) for controlling conduction of semiconductor switches (S1-S10) in the plurality of inverters (50a, 50b), and also includes a common dc bus (70), a common dc bus filtering capacitor (C1) and a common dc bus voltage sensor (67). The electric machines (57, 62) may be synchronous machines, induction machines, or PM machines and may be operated in a motoring mode or a generating mode.

  5. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  6. Heating and current drive systems for TPX

    SciTech Connect (OSTI)

    Swain, D.; Goranson, P.; Halle, A. von; Bernabei, S.; Greenough, N.

    1994-05-24

    The heating and current drive (H and CD) system proposed for the TPX tokamak will consist of ion cyclotron, neutral beam, and lower hybrid systems. It will have 17.5 MW of installed H and CD power initially, and can be upgraded to 45 MW. It will be used to explore advanced confinement and fully current-driven plasma regimes with pulse lengths of up to 1,000 s.

  7. Traction Drive Systems Breakout | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCEDInstallers/ContractorsPhotovoltaicsState ofSavings forTitle XVIIofTracers andTraction Drive

  8. Quasi-spherical direct drive fusion.

    SciTech Connect (OSTI)

    VanDevender, J. Pace; Abbott, Lucas M.; Langston, William L.; McDaniel, Dillon Heirman; Nash, Thomas J.; Roderick, Norman Frederick; Silva, M.

    2007-01-01

    The authors present designs of quasi-spherical direction drive z-pinch loads for machines such as ZR at 28 MA load current with a 150 ns implosion time (QSDDI). A double shell system for ZR has produced a 2D simulated yield of 12 MJ, but the drive for this system on ZR has essentially no margin. A double shell system for a 56 MA driver at 150 ns implosion has produced a simulated yield of 130 MJ with considerable margin in attaining the necessary temperature and density-radius product for ignition. They also represent designs for a magnetically insulated current amplifier, (MICA), that modify the attainable ZR load current to 36 MA with a 28 ns rise time. The faster pulse provided by a MICA makes it possible to drive quasi-spherical single shell implosions (QSDD2). They present results from 1D LASNEX and 2D MACH2 simulations of promising low-adiabat cryogenic QSDD2 capsules and 1D LASNEX results of high-adiabat cryogenic QSDD2 capsules.

  9. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  10. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  11. Indianapolis Offers a Lesson on Driving Demand | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Indianapolis Offers a Lesson on Driving Demand Indianapolis Offers a Lesson on Driving Demand The flier for EcoHouse, with the headline 'Save energy, save money, improve your home'...

  12. An Optimization Model for Eco-Driving at Signalized Intersection 

    E-Print Network [OSTI]

    Chen, Zhi

    2013-07-15

    This research develops an optimization model for eco-driving at signalized intersection. In urban areas, signalized intersections are the “hot spots” of air emissions and have significant negative environmental and health impacts. Eco-driving is a...

  13. Secrets of the Motor That Drives Archaea Revealed

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Secrets of the Motor That Drives Archaea Revealed Secrets of the Motor That Drives Archaea Revealed Print Thursday, 14 February 2013 00:00 An international team led by John Tainer...

  14. Energy Department Announces $53 Million to Drive Innovation,...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    53 Million to Drive Innovation, Cut Cost of Solar Power Energy Department Announces 53 Million to Drive Innovation, Cut Cost of Solar Power October 22, 2014 - 1:15am Addthis News...

  15. Fast shadow detection for urban autonomous driving applications

    E-Print Network [OSTI]

    Park, Sooho

    This paper presents shadow detection methods for vision-based autonomous driving in an urban environment. Shadows misclassified as objects create problems in autonomous driving applications. Real-time efficient algorithms ...

  16. Energy Department Announces New Prize Challenge to Drive Down...

    Office of Environmental Management (EM)

    Prize Challenge to Drive Down Solar Costs Energy Department Announces New Prize Challenge to Drive Down Solar Costs May 20, 2014 - 12:34pm Addthis To kick off the SunShot...

  17. Utilizing the Traction Drive Power Electronics System to Provide...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Traction Drive Power Electronics System to Provide Plug-in Capability for PHEVs Utilizing the Traction Drive Power Electronics System to Provide Plug-in Capability for PHEVs 2009...

  18. How to Avoid Overestimating Variable Speed Drive Savings 

    E-Print Network [OSTI]

    Maxwell, J. B.

    2005-01-01

    of Magnetically Coupled Adjustable Speed Drive Systems, Pacific Northwest National Laboratory, PNNL-13879, June 2002. 9. Electric Power Research Institute, Title and date unknown, PR I966-241, as cited in "Adjustable Speed Drives" section of "Industrial...

  19. Fact #759: December 24, 2012 Rural vs. Urban Driving Differences

    Broader source: Energy.gov [DOE]

    According to the National Household Travel Survey, those living in rural areas drive ten more miles in a day than those who live in cities. People living in the suburbs drive only about three to...

  20. DVM Admissions Office (0442) 245 Duck Pond Drive

    E-Print Network [OSTI]

    DVM Admissions Office (0442) 245 Duck Pond Drive Blacksburg, VA 24061 Phone: 540-231-4699 Fax: 540 June 30, 2016 #12;DVM Admissions Office (0442) 245 Duck Pond Drive Blacksburg, VA 24061 Phone: 540

  1. Economical Aspects of Adjustable Speed Drives in Pumping Systems 

    E-Print Network [OSTI]

    Hovstadius, G.

    1999-01-01

    Speed variations of pumps have become increasingly popular as the technology to produce variable frequency drives has progressed. Variable speed drives have many advantages compared to throttle valves when it comes to regulation of flow. They offer...

  2. DRIVE(tm) Mobile App | Open Energy Information

    Open Energy Info (EERE)

    handle all of the details related to sending incentives, provide real time status of offer accepts, and validate points earned. The DRIVE System includes the DRIVE App as a fun...

  3. Columbia Power Technologies, Inc. Deploys its Direct Drive Wave...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Columbia Power Technologies, Inc. Deploys its Direct Drive Wave Energy Buoy Columbia Power Technologies, Inc. Deploys its Direct Drive Wave Energy Buoy April 9, 2013 - 12:00am...

  4. Homodyne target tracking for direct drive laser inertial fusion

    E-Print Network [OSTI]

    Spalding, Jon David

    2009-01-01

    direct drive inertial confinement fusion experiments, asto be used in >>>Inertial Confinement Fusion, as a means of

  5. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  6. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  7. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  8. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  9. Current Drive in a Ponderomotive Potential with Sign Reversal

    SciTech Connect (OSTI)

    N.J. Fisch; J.M. Rax; I.Y. Dodin

    2003-07-30

    Noninductive current drive can be accomplished through ponderomotive forces with high efficiency when the potential changes sign over the interaction region. The effect can practiced upon both ions and electrons. The current drive efficiencies, in principle, might be higher than those possible with conventional radio-frequency current-drive techniques, since different considerations come into play.

  10. Gears and Belt Drives for Non-Uniform Transmission

    E-Print Network [OSTI]

    Nawratil, Georg

    Gears and Belt Drives for Non-Uniform Transmission Hellmuth Stachel Abstract Ordinarily, gears and belt drives are used for uniform transmission of rotations between parallel axes. Here we focus. Concerning belt drives, we study their relation to tooth profiles and focus on `strict' cases which work

  11. Comparing Two Types of Magnetically- Coupled Adjustable Speed Drives with Variable Frequency Drives in Pump and Fan Applications 

    E-Print Network [OSTI]

    Anderson, K. J.; Chvala, W. D.

    2003-01-01

    This paper presents the results from laboratory tests on MagnaDrive Corporations fixed-magnet magnetically-coupled adjustable speed drive (MC-ASD) and Coyote Electronics electromagnetic MC-ASD as compared to a typical variable frequency drive (VFD...

  12. Oscillatory nonohomic current drive for maintaining a plasma current

    DOE Patents [OSTI]

    Fisch, N.J.

    1984-01-01

    Apparatus and methods are described for maintaining a plasma current with an oscillatory nonohmic current drive. Each cycle of operation has a generation period in which current driving energy is applied to the plasma, and a relaxation period in which current driving energy is removed. Plasma parameters, such as plasma temperature or plasma average ionic charge state, are modified during the generation period so as to oscillate plasma resistivity in synchronism with the application of current driving energy. The invention improves overall current drive efficiencies.

  13. Improving Motor and Drive System Performance – A Sourcebook for Industry

    SciTech Connect (OSTI)

    2014-02-01

    This sourcebook outlines opportunities to improve motor and drive systems performance. The sourcebook is divided into four main sections: (1) Motor and Drive System Basics: Summarizes important terms, relationships, and system design considerations relating to motor and drive systems. (2) Performance Opportunity Road Map: Details the key components of well-functioning motor and drive systems and opportunities for energy performance opportunities. (3) Motor System Economics: Offers recommendations on how to propose improvement projects based on corporate priorities, efficiency gains, and financial payback periods. (4) Where to Find Help: Provides a directory of organizations associated with motors and drives, as well as resources for additional information, tools, software, videos, and training opportunities.

  14. Oscillatory nonhmic current drive for maintaining a plasma current

    DOE Patents [OSTI]

    Fisch, Nathaniel J. (Princeton, NJ)

    1986-01-01

    Apparatus and method of the invention maintain a plasma current with an oscillatory nonohmic current drive. Each cycle of operation has a generation period in which current driving energy is applied to the plasma, and a relaxation period in which current driving energy is removed. Plasma parameters, such as plasma temperature or plasma average ionic charge state, are modified during the generation period so as to oscillate plasma resistivity in synchronism with the application of current driving energy. The invention improves overall current drive efficiencies.

  15. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  16. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  17. Safe Tractor Operation: Driving on Highways 

    E-Print Network [OSTI]

    Smith, David

    2004-09-16

    of the car first notices the tractor while still 400 feet behind it, the driver has less than 10 seconds to avoid a collision with the tractor. In this time, the driver of the car must recognize the danger, determine the speed the tractor is traveling... the brakes, clutch and steering mechanisms, and often cannot see everything around them while sitting in the tractor seat. Don?t put your child in this dangerous situation. Chil- dren should never drive tractors on public roads. Extra Riders Except...

  18. SuperDrive Inc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing CapacityVectren)Model for theSunLanSuperDrive Inc Jump to: navigation,

  19. Direct Drive Systems DDS | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstrumentsArea (DOE GTP) JumpDillard Road SolarEngineeringDirect Drive

  20. National Drive Electric Week | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergy AEnergy Managing SwimmingMicrosoft TheDepartmentNational Drive Electric Week

  1. Hyper Drive Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View NewGuam:on Openei | Open Energy InformationHydrothermalDrive Ltd

  2. Electrifying Your Drive | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum Based|DepartmentStatementofAprilof Energy 2ofU.S.Electrifying Your Drive

  3. MASSACHUSETTS DRIVES PERFORMANCE MEASUREMENT | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergyInterested Parties - WAPA PublicLED1,400 Jobs |Inc. |EnergyMASSACHUSETTS DRIVES

  4. GenDrive Limited | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavy ElectricalsFTL SolarGate Solar Jump to:GenDrive Limited Jump to:

  5. Driving the Future | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalentLaboratory |Sectorfor $1.14 Per Gallon Driving for $1.14

  6. Has Driving Come to a Halt?

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet) Wyoming Dry NaturalPrices1Markets See full Genealogy ofFederalHas Driving

  7. Google Drive for Work | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data CenterFinancial OpportunitiesDepartment of Energy SmallGoogle Drive for

  8. A multicolor, broadband (520m), quaternary-capped InAs/GaAs quantum dot infrared photodetector

    E-Print Network [OSTI]

    Perera, A. G. Unil

    , Mumbai 400076, India 2 Department of Physics & Astronomy, Georgia State University, Atlanta, Georgia. Using strain field and multi-band k Á p theory, we map specific bound-to-bound and bound

  9. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  10. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  11. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  12. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  13. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  14. VIRTUAL REALITY DRIVING SIMULATION: Integrating Infrastructure Plans, Traffic Models, and Driving Behaviors

    E-Print Network [OSTI]

    to include 3D models, animated traffic and human characters, as well as functions that allow users to take-1- VIRTUAL REALITY DRIVING SIMULATION: Integrating Infrastructure Plans, Traffic Models@forum8.co.jp Summary: This paper presents a virtual reality (VR) system that enables large

  15. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  16. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  17. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  18. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  19. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  20. Electric-drive tractability indicator integrated in hybrid electric vehicle tachometer

    DOE Patents [OSTI]

    Tamai, Goro; Zhou, Jing; Weslati, Feisel

    2014-09-02

    An indicator, system and method of indicating electric drive usability in a hybrid electric vehicle. A tachometer is used that includes a display having an all-electric drive portion and a hybrid drive portion. The all-electric drive portion and the hybrid drive portion share a first boundary which indicates a minimum electric drive usability and a beginning of hybrid drive operation of the vehicle. The indicated level of electric drive usability is derived from at least one of a percent battery discharge, a percent maximum torque provided by the electric drive, and a percent electric drive to hybrid drive operating cost for the hybrid electric vehicle.

  1. Georgia and Arkansas Residential Energy Code Field Studies |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GA Partners: - Advanced Energy - Raleigh, NC - Arkansas Economic Development Commission, Energy Office - Little Rock, AR - Georgia Department of Community Affairs - Atlanta, GA -...

  2. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  3. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  4. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  5. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  6. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  7. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  8. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  9. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  10. Vehicle drive module having improved terminal design

    DOE Patents [OSTI]

    Beihoff, Bruce C.; Radosevich, Lawrence D.; Phillips, Mark G.; Kehl, Dennis L.; Kaishian, Steven C.; Kannenberg, Daniel G.

    2006-04-25

    A terminal structure for vehicle drive power electronics circuits reduces the need for a DC bus and thereby the incidence of parasitic inductance. The structure is secured to a support that may receive one or more power electronic circuits. The support may aid in removing heat from the circuits through fluid circulating through the support. The support may form a shield from both external EMI/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as by direct contact between the terminal assembly and AC and DC circuit components. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

  11. Vehicle drive module having improved cooling configuration

    DOE Patents [OSTI]

    Radosevich, Lawrence D.; Meyer, Andreas A.; Kannenberg, Daniel G.; Kaishian, Steven C.; Beihoff, Bruce C.

    2007-02-13

    An electric vehicle drive includes a thermal support may receive one or more power electronic circuits. The support may aid in removing heat from the circuits through fluid circulating through the support. Power electronic circuits are thermally matched, such as between component layers and between the circuits and the support. The support may form a shield from both external EMI/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as improved terminal configurations. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

  12. Simulations for CLIC Drive Beam Linac

    E-Print Network [OSTI]

    Avni Aksoy

    2012-02-25

    The Drive Beam Linac of the Compact Linear Collider (CLIC) has to accelerate an electron beam with 4.2 A up to 2.4 GeV in almost fully-loaded structures. The pulse contains about 70000 bunches, one in every second rf bucket, and has a length of 140 $\\mu$s. The beam stability along the beamline is of concern for such a high current and pulse length. We present different options for the lattice of the linac based on FODO, triplet and doublet cells and compare the transverse instability for each lattice including the effects of beam jitter, alignment and beam-based correction. Additionally longitudinal stability is discussed for different bunch compressors using FODO type of lattice.

  13. Vehicle drive module having improved EMI shielding

    DOE Patents [OSTI]

    Beihoff, Bruce C.; Kehl, Dennis L.; Gettelfinger, Lee A.; Kaishian, Steven C.; Phillips, Mark G.; Radosevich, Lawrence D.

    2006-11-28

    EMI shielding in an electric vehicle drive is provided for power electronics circuits and the like via a direct-mount reference plane support and shielding structure. The thermal support may receive one or more power electronic circuits. The support may aid in removing heat from the circuits through fluid circulating through the support. The support forms a shield from both external EMI/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as improved terminal configurations. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

  14. Traction drive automatic transmission for gas turbine engine driveline

    DOE Patents [OSTI]

    Carriere, Donald L. (Livonia, MI)

    1984-01-01

    A transaxle driveline for a wheeled vehicle has a high speed turbine engine and a torque splitting gearset that includes a traction drive unit and a torque converter on a common axis transversely arranged with respect to the longitudinal centerline of the vehicle. The drive wheels of the vehicle are mounted on a shaft parallel to the turbine shaft and carry a final drive gearset for driving the axle shafts. A second embodiment of the final drive gearing produces an overdrive ratio between the output of the first gearset and the axle shafts. A continuously variable range of speed ratios is produced by varying the position of the drive rollers of the traction unit. After starting the vehicle from rest, the transmission is set for operation in the high speed range by engaging a first lockup clutch that joins the torque converter impeller to the turbine for operation as a hydraulic coupling.

  15. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  16. A FORMULA FOR EFFICIENCY OF FAST WAVE CURRENT DRIVE

    E-Print Network [OSTI]

    Karney, Charles

    A FORMULA FOR EFFICIENCY OF FAST WAVE CURRENT DRIVE IN FUSION DEVICES S.C. CHIU, C.F.F. KARNEY,* R://charles.karney.info/biblio/chiu92.html #12;Chiu e t al. 4 FORMULA FOR EFFICIENCY OF FAST WAVE CURRENT DRIVE IN FUSION DEVICES A FORMULA FOR EFFICIENCY OF FAST WAVE CURRENT DRIVE IN FUSION DEVICES* S.C. CHIU,C.F.F. KARNEY,~R.W. HARVEY

  17. A motor drive control system for the Lidar Polarimeter 

    E-Print Network [OSTI]

    Leung, Waiming

    1977-01-01

    A MOTOR DRIVE CONTROL SYSTEM FOR THE LIDAR POLARIMETER A Thesis by Waiming Leung Submitted to the Graduate College of Texas A/M University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCF, May 1977 Major... Subject: Electrical Engineering A MOTOR DRIVE CONTROL SYSTEM FOR THE LIDAR POLARIMETER A Thesis by Waiming Leung Approved as to style and content by: Chairman o Comm' ee ea o epartment Member Mem er May 1977 ABSTRACT A Motor Drive Control...

  18. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  19. The Drive for Energy Diversity and Sustainability: The Impact...

    Broader source: Energy.gov (indexed) [DOE]

    program - driving unleaded gasoline nationwide in US 1970: GM introduces no lead tolerant engines on all 1971 models in US & Canada 3 Transportation is a growth industry...

  20. Vehicle Technologies Office: U.S. DRIVE 2014 Technical Accomplishments...

    Office of Environmental Management (EM)

    Energy Storage R&D Annual Progress Report US DRIVE Electrochemical Energy Storage Technical Team Roadmap Vehicle Technologies Office: 2010 Energy Storage R&D Annual Progress Report...

  1. Vehicle Technologies Office: US DRIVE Materials Technical Team...

    Broader source: Energy.gov (indexed) [DOE]

    vehicle efficiency regardless of the vehicle size or propulsion system employed. This roadmap lays out the future direction for this research. U.S. DRIVE Materials Technical Team...

  2. Adjustable-Speed Drives for 500 to 4000 Horsepower Industrial...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    thereby controlling the amount of torque transmitted. Eliminates the transmission of vibration across the drive due to the air gap configuration. Benefits Productivity Eliminates...

  3. Electric Drive Vehicle Level Control Development Under Various...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Level Control Development Under Various Thermal Conditions Electric Drive Vehicle Level Control Development Under Various Thermal Conditions 2012 DOE Hydrogen and Fuel Cells...

  4. Strategies for Marketing and Driving Demand for Commercial Financing...

    Broader source: Energy.gov (indexed) [DOE]

    Financing and Commercial Peer Exchange Call: Strategies for Marketing and Driving Demand for Commercial Financing Products, Call Slides and Discussion Summary, February 2, 2012....

  5. Using Partnerships to Drive Demand and Provide Services in Communities...

    Broader source: Energy.gov (indexed) [DOE]

    Program Multifamily and Low-Income Peer Exchange Call: Using Partnerships to Drive Demand and Provide Services in Communities, February 2, 2012. Call Slides and Discussion...

  6. Better Buildings Residential Network Driving Demand Peer Exchange...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Driving Demand Peer Exchange Call Series: Leveraging Holidays and Other Events Call Slides and Discussion Summary November 7, 2013 Agenda Call Logistics and Introductions ...

  7. X-Ray Microscopy Reveals How Crystal Mechanics Drive Battery...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Microscopy Reveals How Crystal Mechanics Drive Battery Performance Print Rechargeable lithium-ion batteries power most portable electronics and are becoming more widely used in...

  8. Medium- and Heavy-Duty Electric Drive Vehicle Simulation and...

    Broader source: Energy.gov (indexed) [DOE]

    Meeting vss043gonder2012o.pdf More Documents & Publications Medium- and Heavy-Duty Electric Drive Vehicle Simulation and Analysis Battery Pack Requirements and Targets...

  9. Factors driving wind power development in the United States

    E-Print Network [OSTI]

    Bird, Lori A.; Parsons, Brian; Gagliano, Troy; Brown, Matthew H.; Wiser, Ryan H.; Bolinger, Mark

    2003-01-01

    s Largest Purchase of Wind Power,” September 17, 2001.FACTORS DRIVING WIND POWER DEVELOPMENT IN THE UNITED STATESthe United States third in wind power capacity globally,

  10. Adaptive Rejection of Narrow Band Disturbance in Hard Disk Drives

    E-Print Network [OSTI]

    Zheng, Qixing

    2009-01-01

    on Advanced Intelligent Mechatronics, Monterey, CA, pp.13-C. Bi. Hard Disk Drive: Mechatronics and Control. CRC Press,new servo method in mechatronics. Trans. Of Japanese Society

  11. Phonon localization drives nanoregions in a relaxor ferroelectric...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    localization drives nanoregions in a relaxor ferroelectric April 11, 2014 This inelastic neutron scattering spectrum shows the localizing modes (LMs) between the transverse optic...

  12. Multi-function magnetic jack control drive mechanism

    DOE Patents [OSTI]

    Bollinger, L.R.; Crawford, D.C.

    1983-10-06

    A multi-function magnetic jack control drive mechanism for controlling a nuclear reactor is provided. The mechanism includes an elongate pressure housing in which a plurality of closely spaced drive rods are located. Each drive rod is connected to a rod which is insertable in the reactor core. An electromechanical stationary latch device is provided which is actuatable to hold each drive rod stationary with respect to the pressure housing. An electromechanical movable latch device is also provided for each one of the drive rods. Each movable latch device is provided with a base and is actuatable to hold a respective drive rod stationary with respect to the base. An electromechanical lift device is further provided for each base which is actuatable for moving a respective base longitudinally along the pressure housing. In this manner, one or more drive rods can be moved in the pressure housing by sequentially and repetitively operating the electromechanical devices. Preferably, each latch device includes a pair of opposed latches which grip teeth located on the respective drive rod. Two, three, or four drive rods can be located symmetrically about the longitudinal axis of the pressure housing.

  13. Multi-function magnetic jack control drive mechanism

    DOE Patents [OSTI]

    Bollinger, Lawrence R. (Schenectady, NY); Crawford, Donald C. (Scotia, NY)

    1986-01-01

    A multi-function magnetic jack control drive mechanism for controlling a nuclear reactor is provided. The mechanism includes an elongate pressure housing in which a plurality of closely spaced drive rods are located. Each drive rod is connected to a rod which is insertable in the reactor core. An electromechanical stationary latch device is provided which is actuatable to hold each drive rod stationary with respect to the pressure housing. An electromechanical movable latch device is also provided for each one of the drive rods. Each movable latch device is provided with a base and is actuatable to hold a respective drive rod stationary with respect to the base. An electromechanical lift device is further provided for each base which is actuatable for moving a respective base longitudinally along the pressure housing. In this manner, one or more drive rods can be moved in the pressure housing by sequentially and repetitively operating the electromechanical devices. Preferably, each latch device includes a pair of opposed latches which grip teeth located on the respective drive rod. Two, three, or four drive rods can be located symmetrically about the longitudinal axis of the pressure housing.

  14. Expected Technological Innovation to Drive Global Market for...

    Open Energy Info (EERE)

    systems in terms of various end use segments, which include industrial, commercial and residential markets for microturbines. The commercial end use segment is expected to drive...

  15. Energy Department Announces $60 Million to Drive Affordable,...

    Broader source: Energy.gov (indexed) [DOE]

    SunShot Initiative is a collaborative national effort that aggressively drives innovation to make solar energy fully cost-competitive with traditional energy sources by...

  16. Energy Department Announces $19 Million to Drive Down Solar Soft...

    Office of Environmental Management (EM)

    Energy Department's broader SunShot Initiative investments that are driving down the cost of solar and making solar affordable for more American families and companies. Since...

  17. Solutia: Utilizing Sub-Metering to Drive Energy Project Approvals...

    Broader source: Energy.gov (indexed) [DOE]

    plant. Solutia: Utilizing Sub-Metering to Drive Energy Project Approvals Through Data (July 2011) More Documents & Publications Nissan North America: How Sub-Metering...

  18. Hard Driving and Efficiency: iron production in 1890

    E-Print Network [OSTI]

    Berck, Peter

    1977-01-01

    hard driving or the Solvay process--was rational for British2) neglect of the Solvay process for producing soda was

  19. Incorporating solid state drives into distributed storage systems

    E-Print Network [OSTI]

    Wacha, Rosie

    2012-01-01

    27 Low Power Storage Systems . . . . . . . . . . . . . . .Drives into Distributed Storage Systems Rosie Wacha Big dataINTO DISTRIBUTED STORAGE SYSTEMS A dissertation submitted in

  20. Driving the National Parks Forward | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Parks Forward Driving the National Parks Forward June 19, 2012 - 4:02pm Addthis Propane shuttle buses used to transport visitors at Mammoth Cave National Park. | Photo...

  1. EV Everywhere Electric Drive Workshop: Preliminary Target-Setting...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    given at the EV Everywhere Grand Challenge - Electric Drive (Power Electronics and Electric Machines) Workshop on July 24, 2012 held at the Doubletree O'Hare, Chicago, IL....

  2. EV Everywhere Grand Challenge Introduction for Electric Drive...

    Energy Savers [EERE]

    Danielson at the EV Everywhere Grand Challenge - Electric Drive (Power Electronics and Electric Machines) Workshop on July 24, 2012 held at the Doubletree O'Hare, Chicago, IL....

  3. EV Everywhere Grand Challenge - Electric Drive (Power Electronics...

    Broader source: Energy.gov (indexed) [DOE]

    EV Everywhere EV Everywhere Grand Challenge - Electric Drive (Power Electronics and Electric Machines) Workshop Agenda EV Everywhere Grand Challenge - Battery Workshop...

  4. EV Everywhere Workshop: Traction Drive Systems Breakout Group...

    Broader source: Energy.gov (indexed) [DOE]

    7amarlinoed.pdf More Documents & Publications EV Everywhere - Charge to Breakout Sessions EV Everywhere Framing Workshop - Report Out & Lessons Learned Traction Drive Systems...

  5. Electrical motor/generator drive apparatus and method

    DOE Patents [OSTI]

    Su, Gui Jia

    2013-02-12

    The present disclosure includes electrical motor/generator drive systems and methods that significantly reduce inverter direct-current (DC) bus ripple currents and thus the volume and cost of a capacitor. The drive methodology is based on a segmented drive system that does not add switches or passive components but involves reconfiguring inverter switches and motor stator winding connections in a way that allows the formation of multiple, independent drive units and the use of simple alternated switching and optimized Pulse Width Modulation (PWM) schemes to eliminate or significantly reduce the capacitor ripple current.

  6. Consider Steam Turbine Drives for Rotating Equipment, Energy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    for Rotating Equipment Steam turbines are well suited as prime movers for driving boiler feedwater pumps, forced or induced-draft fans, blowers, air compressors, and other...

  7. Watch Energy Secretary Moniz Test Drive the Toyota Mirai

    Broader source: Energy.gov [DOE]

    The Energy Department posted a video of ?Secretary Ernest Moniz driving the Toyota Mirai, the first fuel cell electric vehicle (FCEV) for sale in the United States.

  8. Vehicle Technologies Office: U.S. DRIVE 2013 Technical Accomplishments...

    Broader source: Energy.gov (indexed) [DOE]

    Report summarizes key technical accomplishments in the development of advanced automotive and related energy infrastructure technologies achieved in 2013 by the U.S. DRIVE...

  9. Impact Of Real-World Driving Characteristics On Vehicular Emissions

    E-Print Network [OSTI]

    Nesamani, K S; Subramanian, K. P.

    2005-01-01

    University of Hawaii. (2001). Kuhler, M. and D. Karstens,influence on emissions. Kuhler and Karstens included a fewcharacterize the driving cycle (Kuhler and Karstens 1978).

  10. Critical Factors Driving the High Volumetric Uptake of Methane...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Critical Factors Driving the High Volumetric Uptake of Methane in Cu-3(btc)(2) Previous Next List Hulvey, Zeric; Vlaisavljevich, Bess; Mason, Jarad A.; Tsivion, Ehud; Dougherty,...

  11. Energy Department Announces $53 Million to Drive Innovation,...

    Broader source: Energy.gov (indexed) [DOE]

    projects that aim to drive down the cost of solar energy, tackling key aspects of technology development in order to bring innovative ideas to the market more quickly....

  12. Electric Drive and Advanced Battery and Components Testbed (EDAB...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    vss033carlson2012o.pdf More Documents & Publications Electric Drive and Advanced Battery and Components Testbed (EDAB) Vehicle Technologies Office Merit Review 2014: Electric...

  13. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  14. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  15. Atlanta Central UESC Pilot Project

    Energy Savers [EERE]

    Upgrade - VFD on Pumps 30,151 14 0 0 3,874 0 Heating System Upgrade - Replace Electric Boiler & Pumps 175,063 192 (6,087) 0 36,272 1,667 DDC Controls & Optimization 9,435 15...

  16. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  17. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  18. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  19. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  20. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  1. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  2. Unique Aspects of RMF Current Drive Applied to FRCs

    E-Print Network [OSTI]

    Washington at Seattle, University of

    50 l Rotamak RMF flux drive pushes FRC against plasma tube wall #12;US-Japan November, 1999 STX RMF theory and FRC experiments Analytic torque calculations FRC equilibrium model and flux drive Model calculations and experimental comparison Summary #12;Simple RMF Penetration Theory & `FRC Experiments #12;US

  3. Experimental Determination of Crack Driving Forces in Integrated Structures

    E-Print Network [OSTI]

    Suo, Zhigang

    8/2/2004 1 Experimental Determination of Crack Driving Forces in Integrated Structures Jun He in a structure, the crack driving force G is the reduction of the elastic energy in the structure, associated. In practice, however, such a calculation is prohibitively difficult for integrated structures of complex

  4. DRIVING AND PARKING DIRECTIONS UCSD Computer Science and Engineering building

    E-Print Network [OSTI]

    Simunic, Tajana

    DRIVING AND PARKING DIRECTIONS UCSD Computer Science and Engineering building and CNS offices From North of La Jolla - Interstate 5 Interstate 5 South. Exit Genesee and head west (right). Go up to the right. When you reach Voigt Drive (stop sign), turn left and go down a hill. Turn left on Equality Lane

  5. The Effect of Ridesharing Services on Drunk Driving 

    E-Print Network [OSTI]

    Kalmbach, Zachary John

    2014-09-19

    Drunk driving is a significant problem in today’s society, and the recent development of ridesharing services, like Uber, offer a new way to avoid driving under the influence. In this paper, I examine whether the presence of Uber has caused a...

  6. Working on new gas turbine cycle for heat pump drive

    E-Print Network [OSTI]

    Oak Ridge National Laboratory

    Working on new gas turbine cycle for heat pump drive FILE COPY TAP By Irwin Stambler, Field Editor, is sized for a 10-ton heat pump system - will be scaled to power a commercial product line ranging from 7 of the cycle- as a heat pump drive for commercial installations. Company is testing prototype gas turbine

  7. Tunneling control by highfrequency driving Ilya Vorobeichik and Nimrod Moiseyev

    E-Print Network [OSTI]

    Moiseyev, Nimrod

    Tunneling control by high­frequency driving Ilya Vorobeichik and Nimrod Moiseyev Department @3# supports this hypothesis. However, in the limit of high­frequency driving, the Kramers systems in strong laser fields @1,2#. We show that high­frequency second­order perturbation theory based

  8. WAYNE STATE UNIVERSITY ELECTRIC-DRIVE VEHICLE ENGINEERING

    E-Print Network [OSTI]

    Berdichevsky, Victor

    5120 Fundamentals of Alternative Energy Technology 4 PROGRAM (4 Courses) EVE 5___ 4 EVE 5___ 4 EVE 5WAYNE STATE UNIVERSITY ELECTRIC-DRIVE VEHICLE ENGINEERING PLAN OF WORK FOR MASTERS DEGREE Student with the Electric-Drive Vehicle Engineering Office (1100 Engineering) prior to the beginning of the second semester

  9. Transient and quasisteady behavior with rotating magnetic field current drive

    E-Print Network [OSTI]

    Washington at Seattle, University of

    rotamaks and the Star Thrust Experiment. Other sources of ion momentum are essential for RMF current drive in hotter, fusion-relevant plasmas. The properties of the quasisteady state are found, including the self that penetrate the plasma are a promising method by which to drive a steady current in magnetic fusion systems

  10. S-700A MOSSBAUER DRIVE INTERCONNECTION DIAGRAM FOR

    E-Print Network [OSTI]

    Browder, Tom

    S-700A MOSSBAUER DRIVE INTERCONNECTION DIAGRAM FOR C.A.OPERATION WITH COMPUTER CUMPUEK WITH K A OK OPERATION D V -LIY I SCALER RESET DATA The S-700A drive and K-4 motor can also be used in Constant Velocity the constant velocity motion. The duty cycle is about 85%, and there is provision for the gating of data so

  11. A Driving Simulator for Teaching Embedded Automotive Control Applications

    E-Print Network [OSTI]

    Gillespie, Brent

    A Driving Simulator for Teaching Embedded Automotive Control Applications Paul G. Griffiths component uses a typical automotive power- train micro-controller and teaches topics in system dynamics students build a fixed-based driving simulator to test advanced automotive control system designs

  12. Active surge control of centrifugal compressors using drive torque

    E-Print Network [OSTI]

    Gravdahl, Jan Tommy

    Active surge control of centrifugal compressors using drive torque Jan Tommy Gravdahl , Olav control is presented. A centrifugal compressor driven by an electrical motor is studied, and the drive of centrifugal com- pressors, which occurs when the operating point of the compressor is located to the left

  13. Practical object recognition in autonomous driving and beyond

    E-Print Network [OSTI]

    Thrun, Sebastian

    by caravaning on highways, thus reducing CO2 emissions. The recent self-driving car project at Google [11] has high-reliability systems that are necessary for real-world use. Despite this, there are many areas's autonomous driving systems are based on building detailed maps of the world, then localizing to them during

  14. Base drive and overlap protection circuit

    DOE Patents [OSTI]

    Gritter, David J. (Southfield, MI)

    1983-01-01

    An inverter (34) which provides power to an A. C. machine (28) is controlled by a circuit (36) employing PWM control strategy whereby A. C. power is supplied to the machine at a preselectable frequency and preselectable voltage. This is accomplished by the technique of waveform notching in which the shapes of the notches are varied to determine the average energy content of the overall waveform. Through this arrangement, the operational efficiency of the A. C. machine is optimized. The control circuit includes a microcomputer and memory element which receive various parametric inputs and calculate optimized machine control data signals therefrom. The control data is asynchronously loaded into the inverter through an intermediate buffer (38). A base drive and overlap protection circuit is included to insure that both transistors of a complimentary pair are not conducting at the same time. In its preferred embodiment, the present invention is incorporated within an electric vehicle (10) employing a 144 VDC battery pack (32) and a three-phase induction motor (18).

  15. Advanced insulated gate bipolar transistor gate drive

    DOE Patents [OSTI]

    Short, James Evans (Monongahela, PA); West, Shawn Michael (West Mifflin, PA); Fabean, Robert J. (Donora, PA)

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  16. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  17. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  18. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  19. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  20. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  1. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  2. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  3. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  4. CMOS-compatible InP/InGaAs digital photoreceiver

    DOE Patents [OSTI]

    Lovejoy, M.L.; Rose, B.H.; Craft, D.C.; Enquist, P.M.; Slater, D.B. Jr.

    1997-11-04

    A digital photoreceiver is formed monolithically on an InP semiconductor substrate and comprises a p-i-n photodetector formed from a plurality of InP/InGaAs layers deposited by an epitaxial growth process and an adjacent heterojunction bipolar transistor (HBT) amplifier formed from the same InP/InGaAs layers. The photoreceiver amplifier operates in a large-signal mode to convert a detected photocurrent signal into an amplified output capable of directly driving integrated circuits such as CMOS. In combination with an optical transmitter, the photoreceiver may be used to establish a short-range channel of digital optical communications between integrated circuits with applications to multi-chip modules (MCMs). The photoreceiver may also be used with fiber optic coupling for establishing longer-range digital communications (i.e. optical interconnects) between distributed computers or the like. Arrays of digital photoreceivers may be formed on a common substrate for establishing a plurality of channels of digital optical communication, with each photoreceiver being spaced by less than about 1 mm and consuming less than about 20 mW of power, and preferably less than about 10 mW. Such photoreceiver arrays are useful for transferring huge amounts of digital data between integrated circuits at bit rates of up to about 1,000 Mb/s or more. 4 figs.

  5. CMOS-compatible InP/InGaAs digital photoreceiver

    DOE Patents [OSTI]

    Lovejoy, Michael L. (Albuquerque, NM); Rose, Benny H. (Albuquerque, NM); Craft, David C. (Albuquerque, NM); Enquist, Paul M. (Cary, NC); Slater, Jr., David B. (Raleigh, NC)

    1997-01-01

    A digital photoreceiver is formed monolithically on an InP semiconductor substrate and comprises a p-i-n photodetector formed from a plurality of InP/InGaAs layers deposited by an epitaxial growth process and an adjacent heterojunction bipolar transistor (HBT) amplifier formed from the same InP/InGaAs layers. The photoreceiver amplifier operates in a large-signal mode to convert a detected photocurrent signal into an amplified output capable of directly driving integrated circuits such as CMOS. In combination with an optical transmitter, the photoreceiver may be used to establish a short-range channel of digital optical communications between integrated circuits with applications to multi-chip modules (MCMs). The photoreceiver may also be used with fiber optic coupling for establishing longer-range digital communications (i.e. optical interconnects) between distributed computers or the like. Arrays of digital photoreceivers may be formed on a common substrate for establishing a plurality of channels of digital optical communication, with each photoreceiver being spaced by less than about 1 mm and consuming less than about 20 mW of power, and preferably less than about 10 mW. Such photoreceiver arrays are useful for transferring huge amounts of digital data between integrated circuits at bit rates of up to about 1000 Mb/s or more.

  6. Department of Power Electronics and Electrical Drives Prof. Dr.Ing. Joachim Bcker

    E-Print Network [OSTI]

    Paderborn, Universität

    .09.2014 Mechatronics und Electrical Drives SS 2014 Page 1 of 6 Mechatronics and Electrical Drives 03.09.2014 Surname Drives Prof. Dr.­Ing. J. Böcker 03.09.2014 Mechatronics und Electrical Drives SS 2014 Page 2 of 6.09.2014 Mechatronics und Electrical Drives SS 2014 Page 3 of 6 Aufgabe 2: Reluctance motor (18 Points) The profiles

  7. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  8. Photo-induced water oxidation at the aqueous GaN (101¯0) interface: Deprotonation kinetics of the first proton-coupled electron-transfer step

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ertem, Mehmed Z.; Kharche, Neerav; Batista, Victor S.; Hybertsen, Mark S.; Tully, John C.; Muckerman, James T.

    2015-03-12

    Photoeclectrochemical water splitting plays a key role in a promising path to the carbon-neutral generation of solar fuels. Wurzite GaN and its alloys (e.g., GaN/ZnO and InGaN) are demonstrated photocatalysts for water oxidation, and they can drive the overall water splitting reaction when coupled with co-catalysts for proton reduction. In the present work, we investigate the water oxidation mechanism on the prototypical GaN (101¯0) surface using a combined ab initio molecular dynamics and molecular cluster model approach taking into account the role of water dissociation and hydrogen bonding within the first solvation shell of the hydroxylated surface. The investigation ofmore »free-energy changes for the four proton-coupled electron-transfer (PCET) steps of the water oxidation mechanism shows that the first PCET step for the conversion of –Ga-OH to –Ga-O?? requires the highest energy input. We further examine the sequential PCETs, with the proton transfer (PT) following the electron transfer (ET), and find that photo-generated holes localize on surface –NH sites is thermodynamically more favorable than –OH sites. However, proton transfer from –OH sites with subsequent localization of holes on oxygen atoms is kinetically favored owing to hydrogen bonding interactions at the GaN (101¯0)–water interface. We find that the deprotonation of surface –OH sites is the limiting factor for the generation of reactive oxyl radical ion intermediates and consequently for water oxidation.« less

  9. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  10. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  11. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  12. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  13. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  14. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  15. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  16. Base drive circuit for a four-terminal power Darlington

    DOE Patents [OSTI]

    Lee, Fred C. (Blacksburg, VA); Carter, Roy A. (Salem, VA)

    1983-01-01

    A high power switching circuit which utilizes a four-terminal Darlington transistor block to improve switching speed, particularly in rapid turn-off. Two independent reverse drive currents are utilized during turn off in order to expel the minority carriers of the Darlington pair at their own charge sweep-out rate. The reverse drive current may be provided by a current transformer, the secondary of which is tapped to the base terminal of the power stage of the Darlington block. In one application, the switching circuit is used in each power switching element in a chopper-inverter drive of an electric vehicle propulsion system.

  17. Scaling of lower hybrid current drive with temperature

    SciTech Connect (OSTI)

    Harvey, R.W. ); McCoy, M.G. ); Ram, A.K.; Bers, A. ); Fuchs, V. )

    1992-06-01

    The 3-D Fokker-Planck/quasilinear code (CQL3D) is used to study the temperature scaling of lower hybrid current drive (LHCD) in the JET and JT-60 experiments. An offset-linear increase of current drive efficiency is obtained as a function of volume average temperature {l angle}T{sub e}{r angle} up to {approximately} 2.5, and reduced rate of efficiency increase is found at higher temperatures. The LHCD results indicate some fast wave/LH current drive synergy in the JET LH/FW experiments; however, code results discussed here show that synergy is not due to TTMP damping of the fast wave.

  18. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  19. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  20. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  1. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  2. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  3. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  4. Microsoft PowerPoint - 06 Crawley Drive for Net Zero Energy Commercial...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6 Crawley Drive for Net Zero Energy Commercial Buildings Microsoft PowerPoint - 06 Crawley Drive for Net Zero Energy Commercial Buildings Microsoft PowerPoint - 06 Crawley Drive...

  5. Is it Cost-Effective to Replace Old Eddy-Current Drives? | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Is it Cost-Effective to Replace Old Eddy-Current Drives? Is it Cost-Effective to Replace Old Eddy-Current Drives? New pulse-width-modulated (PWM) adjustable speed drives (ASDs) may...

  6. Algal Biofuels: Long-Term Energy Benefits Drive U.S. Research...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Algal Biofuels: Long-Term Energy Benefits Drive U.S. Research Algal Biofuels: Long-Term Energy Benefits Drive U.S. Research Algal Biofuels: Long-Term Energy Benefits Drive U.S....

  7. Medium- and Heavy-Duty Electric Drive Vehicle Simulation and...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Medium- and Heavy-Duty Electric Drive Vehicle Simulation and Analysis PI: Jeff Gonder (NREL) Team: Laurie Ramroth and Aaron Brooker May 15, 2012 Project ID : VSS043 This...

  8. Medium- and Heavy-Duty Electric Drive Vehicle Simulation and...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Evaluation vss043barnitt2011o.pdf More Documents & Publications Medium- and Heavy-Duty Electric Drive Vehicle Simulation and Analysis Medium and Heavy-Duty Vehicle Field...

  9. Cooling Tower Energy Conservation Through Hydraulic Fan Drives 

    E-Print Network [OSTI]

    Dickerson, J.

    1991-01-01

    Many companies offer gearboxes, shafts, and couplings for cooling tower fan drives, with little or no innovation. These companies have traditionally been purchased with an emphasis on cost and not "Return on Investment!" In the past, when energy...

  10. Design of a triple singularity drive for mobile wheeled robots

    E-Print Network [OSTI]

    Carothers, Jeffrey (Jeffrey W.)

    2014-01-01

    This thesis encompasses the development of a mobile robotic platform using three singularity drive modules. The process begins with a review of other omnidirectional platforms, comparing and contrasting their strengths and ...

  11. Driving Sensing Technology in Oil & Gas | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Newest APS Fellow Driving Groundbreaking Sensing Technology in Oil & Gas Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to...

  12. Adjustable Speed AC Motor Drives-Applications Problems 

    E-Print Network [OSTI]

    Enjeti, P.

    1997-01-01

    Adjustable speed AC drives have become the preferred choice in many industrial applications where controlled speed is required. At the same time, the maturing of the technology and the availability of fast and efficient ...

  13. Magnetically suspended reaction sphere with one-axis hysteresis drive

    E-Print Network [OSTI]

    Zhou, Lei., S.M. Massachusetts Institute of Technology

    2014-01-01

    This thesis presents the design, modeling, implementation, and control of a magnetically suspended reaction sphere with one-axis hysteresis drive (1D-MSRS). The goal of this project is two fold: (a) exploring the design ...

  14. Food Finders Drive Organized - - Purdue University - West Lafayette

    E-Print Network [OSTI]

    $author.value

    2015-11-11

    Nov 11, 2015 ... The Math Office Staff teamed up this year to host a FOOD FINDERS food drive to help those less fortunate during the Holiday Season! The food ...

  15. High efficiency pulse motor drive for robotic propulsion

    E-Print Network [OSTI]

    Sun, Zhen, M.S. Massachusetts Institute of Technology

    2013-01-01

    The goal of this research is to improve the power efficiency of robotic locomotion through the use of series elastic actuation, with a focus on swimming motion. To achieve high efficiency, electromechanical drives need to ...

  16. EM modeling of RF drive in DTL tank 4

    SciTech Connect (OSTI)

    Kurennoy, Sergey S.

    2012-06-19

    A 3-D MicroWave Studio model for the RF drive in the LANSCE DTL tank 4 has been built. Both eigensolver and time-domain modeling are used to evaluate maximal fields in the drive module and RF coupling. The LANSCE DTL tank 4 has recently been experiencing RF problems, which may or may not be related to its replaced RF coupler. This situation stimulated a request by Dan Rees to provide EM modeling of the RF drive in the DTL tank 4 (T4). Jim O'Hara provided a CAD model that was imported into the CST Microwave Studio (MWS) and after some modifications became a part of a simplified MWS model of the T4 RF drive. This technical note describes the model and presents simulation results.

  17. Driving tissue morphogenetic cascades using tunable nanolayered surface coatings

    E-Print Network [OSTI]

    Shah, Nisarg Jaydeep

    2014-01-01

    Harnessing the synergy between materials at the nanoscale can be a valuable tool in understanding and probing cellular phenomena and in driving specific processes that lead to tissue and organ regeneration and repair. ...

  18. Adjustable Speed Drives as Applied to Centrifugal Pumps 

    E-Print Network [OSTI]

    Jarc, D. A.; Robechek, J. D.; Connors, D. P.

    1982-01-01

    of flow control is required. The traditional approach to flow control has used valves which increase system pressure and inherently waste energy and generally cause the pump to operate at reduced efficiencies. Adjustable speed drives can achieve reduced...

  19. Driving Research in Electric Machines |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Driving Research in Electric Machines Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to...

  20. EV Everywhere EV Everywhere Grand Challenge - Electric Drive...

    Broader source: Energy.gov (indexed) [DOE]

    Agenda for the EV Everywhere Grand Challenge - Electric Drive Workshop on July 24, 2012 at the Doubletree O'Hare, Chicago, IL agendaed.pdf More Documents & Publications EV...

  1. Shell trajectory measurements from direct-drive implosion experiments...

    Office of Scientific and Technical Information (OSTI)

    A technique to measure the shell trajectory in direct-drive inertial confinement fusion implosions is presented. The x-ray self emission of the target is measured with an...

  2. Variable Frequency Drives: Energy Savings and Impact on Motor Performance 

    E-Print Network [OSTI]

    Petro, D.

    1993-01-01

    Variable frequency drives (VFDs) have found widespread application in recent years. VFDs are valued for their potential to save energy and improve processes. Reliability has improved significantly, but there are still pitfalls to be addressed...

  3. Minimize Adverse Motor and Adjustable Speed Drive Interactions

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    drive (VFD) with a fast-rise-time insulated gate bipolar transistor (IGBT) to reduce switching losses and noise levels. However, higher carrier frequencies and faster rise-time...

  4. Solutia: Utilizing Sub-Metering to Drive Energy Project Approvals...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solutia: Utilizing Sub-Metering to Drive Energy Project Approvals Through Data Solutia, Inc. has a long history with sub-metering, dating back to the construction of some of its...

  5. High-Voltage Solid Polymer Batteries for Electric Drive Vehicles...

    Office of Scientific and Technical Information (OSTI)

    Voltage Solid Polymer Batteries for Electric Drive Vehicles Eitouni, Hany; Yang, Jin; Pratt, Russell; Wang, Xiao; Grape, Ulrik The purpose of this project was for Seeo to develop a...

  6. Innovation incentives and competition in the hard disk drive industry

    E-Print Network [OSTI]

    Wu, Xiaohua Sherry

    2011-01-01

    Firms in the hard disk drive industry are continually engaging in R & D and improving the quality of their products. We explore various determinants of the product innovation incentives for firms concerned with both their ...

  7. A cloud-assisted design for autonomous driving

    E-Print Network [OSTI]

    Suresh Kumar, Swarun

    This paper presents Carcel, a cloud-assisted system for autonomous driving. Carcel enables the cloud to have access to sensor data from autonomous vehicles as well as the roadside infrastructure. The cloud assists autonomous ...

  8. Performance and mix measurements of indirect drive Cu doped Be...

    Office of Scientific and Technical Information (OSTI)

    indirect drive Cu doped Be implosions Authors: Casey, D T ; Woods, T ; Smalyuk, V A ; Hurricane, O A ; Glebov, V Y ; Stoeckl, C ; Theobald, W ; Wallace, R ; Nikroo, A ; Shuldberg,...

  9. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  10. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  11. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  12. Frequency and amplitude control for an experimental linac rf drive 

    E-Print Network [OSTI]

    Atre, Mahesh Purushottam

    1992-01-01

    FREQUENCY AND AMPLITUDE CONTROL FOR AN EXPERIMENTAL LINAC RF DRIVE A Thesis by MAHESH PURUSHOTTAM ATRE Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements for the degree of MASTER... OF SCIENCE May 1992 Major Subject: Electrical Engineering FREQUENCY AND AMPLITUDE CONTROL FOR AN EXPERIMENTAL LINAC RF DRIVE A Thesis by MAHESH PURUSHOTTAM ATRE Approved as to style and content by: S. P. Bhattachary (Chair of Committee) arng Huang...

  13. Validity and limitations of gas-drive relative permeability measurement 

    E-Print Network [OSTI]

    Gupta, Anand Kumar

    1971-01-01

    VALIDITY AND LIMITATIONS OF GAS-DRIVE RELA TI VE PERMEABILITY MEASUREMEN T A Thesis by ANAND KUMAR GUPTA Submitted to the Graduate College of Texas ARM University in partial fulfillxnent of the requirement for the degree of MASTER Ok SCIENCE... August, 1971 Major Subject: Petroleum Engineering VALIDITY AND LIMITATIONS OF GAS-DRIVE RELATIVE PERMEABILITY MEASUREMENT A Thesis by ANAND KUMAR GUPTA Approved as to style and content by: ( airman of Committee) ber) Head of Department) (Member...

  14. Characterizing the noise produced by hard disk drives 

    E-Print Network [OSTI]

    Cherniak, Bruce Marshall

    1991-01-01

    CHARACTERIZING THE NOISE PRODUCED BY HARD DISK DRIVES A Thesis by BRUCE MARSHALL CHERNIAK Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE... August 1991 Major Subject: Electrical Engineering CHARACTERIZING THE NOISE PRODUCED BY HARD DISK DRIVES A Thesis by BRUCE MARSHALL CHERNIAK Approved as to style and content by: Karan L. Watson (Chair of Committee) Hosame Abu-Amara (Member...

  15. Entrainment of Weakly Coupled Oscillators by External Driving

    E-Print Network [OSTI]

    Anlage, Steven

    Entrainment of Weakly Coupled Oscillators by External Driving Rose Faghih and John Platig Advisers entrainment? Entrainment: The response of the oscillator system varies periodically at the period of the drive is a threshold for entrainment. Our Result 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 M Entrainment Threshold in M

  16. 1998 John Wiley & Sons, Inc. CCC 0012-1630/98/040305-08 Correspondence to: W. D. Hopkins

    E-Print Network [OSTI]

    Maestripieri, Dario

    Cline Department of Psychology Berry College Mt. Berry, GA 30149­5019 Beth Griffin Department Research Center Atlanta, GA and Department of Psychology Emory University Atlanta, GA 30322 Christopher of Psychology Agnes Scott College Decatur, GA 30030 Dario Maestripieri Yerkes Regional Primate Research Center

  17. Noise drives sharpening of gene expression boundaries in the zebrafish hindbrain

    E-Print Network [OSTI]

    Zhang, Lei; Radtke, Kelly; Zheng, Likun; Cai, Anna Q.; Schilling, Thomas F.; Nie, Qing

    2012-01-01

    Macmillan Publishers Limited Noise drives sharpening of genewww.molecularsystemsbiology.com Noise drives sharpening ofin morphogen concentration and noise in signal transduction

  18. Using Community-Based Social Marketing to Drive Demand for Energy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Using Community-Based Social Marketing to Drive Demand for Energy Efficiency Using Community-Based Social Marketing to Drive Demand for Energy Efficiency Slides presented in the...

  19. U.S. First Responder Safety Training for Advanced Electric Drive...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    First Responder Safety Training for Advanced Electric Drive Vehicle Presentation U.S. First Responder Safety Training for Advanced Electric Drive Vehicle Presentation 2010 DOE...

  20. SunLine Test Drives Hydrogen Bus: Hydrogen Fuel Cell & Infrastructure...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Test Drives Hydrogen Bus: Hydrogen Fuel Cell & Infrastructure Technologies Program, Fuel Cell Bus Demonstration Projects Fact Sheet. SunLine Test Drives Hydrogen Bus: Hydrogen Fuel...

  1. Is it Cost-Effective to Replace Old Eddy-Current Drives? - Motor Tip Sheet #12

    SciTech Connect (OSTI)

    2008-07-01

    New pulse-width-modulated (PWM) adjustable speed drives (ASDs) may be cost-effective replacements for aging or maintenance-intensive eddy-current drives.

  2. Health Monitoring of Drive Connected Three-Phase Induction Motors ----- From Wired Towards Wireless Sensor Networks

    E-Print Network [OSTI]

    Xue, Xin

    2009-01-01

    to failure," in Electric Machines and Drives Conference,induction motor," in Electric Machines and Drives Conferenceevaluation for electric machines," in Industrial Electronics

  3. Is it Cost-Effective to Replace Old Eddy-Current Drives?

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (PWM) variable frequency drives (VFD) may be cost- effective replacements for aging or high-maintenance eddy-current drives that are used with variable torque loads, such...

  4. Characterizing the acoustic noise generated by hard disk drives and a scheme for detecting noisy hard drives 

    E-Print Network [OSTI]

    Kim, Seuk Bo

    1992-01-01

    to nearly all personal computer systems, and has been identified as one of the more noisy elements in the system. " The research limited its scope on pattern recognition and characteristic feature selection of noise signals for hard disl& drives...

  5. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  6. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  7. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  8. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  9. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  10. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  11. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  12. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  13. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ) In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells

  14. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  15. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Florida, University of

    , creating both electron traps and increasing electron tunneling through the defect states [4Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron 2011 a b s t r a c t AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative

  16. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  17. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  18. Atomistic description of the electronic structure of InxGa1xAs alloys and InAsGaAs superlattices

    E-Print Network [OSTI]

    Kent, Paul

    quantum-wells15,20 (InxGa1 xAs)n /InP on InP and (InxGa1 xAs)n /GaAs on GaAs, and v GaAs-embedded InAs quantum dots.21­23 We wish to provide a uniform the- oretical description of the electronic structure-period dependence of the band offsets and interband transitions of InAs/GaAs systems on InP and GaAs substrates. DOI

  19. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 m; accepted 3 June 2013; published online 19 June 2013) InGaN/GaN light-emitting diodes (LEDs) with graded , which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which

  20. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Pala, Nezih

    that the 1/f noise in GaN/AlGaN HFETs might be caused by electron tunneling from the channel to the traps was practically independent of the frequency of analysis. The model linking this maximum to the electron tunneling Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics

  1. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  2. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  3. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    be well suited for exploitation of long wavelength quantum dot and dilute nitride technology, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser. Introduction: Lasers based on the GaAs materials system offer advan- tages over their InP counterparts, such as the use

  4. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  5. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  6. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

    E-Print Network [OSTI]

    Florida, University of

    for spacecraft and other long-term sensing applications. However, hydrogen is a dangerous gas for storage for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cellSnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

  7. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  8. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  9. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  10. Progress in direct-drive inertial confinement fusion

    SciTech Connect (OSTI)

    McCrory, R. L.; Meyerhofer, D. D.; Betti, R.; Craxton, R. S.; Delettrez, J. A.; Edgell, D. H.; Glebov, V. Yu.; Goncharov, V. N.; Harding, D. R.; Jacobs-Perkins, D. W.; Knauer, J. P.; Marshall, F. J.; McKenty, P. W.; Radha, P. B.; Regan, S. P.; Sangster, T. C.; Seka, W.; Short, R. W.; Skupsky, S.; Smalyuk, V. A. [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States)] (and others)

    2008-05-15

    Significant progress in direct-drive inertial confinement fusion (ICF) research has been made since the completion of the 60-beam, 30-kJ{sub UV} OMEGA Laser System [Boehly, Opt. Commun. 133, 495 (1997)] in 1995. A theory of ignition requirements, applicable to any ICF concept, has been developed. Detailed understanding of laser-plasma coupling, electron thermal transport, and hot-electron preheating has lead to the measurement of neutron-averaged areal densities of {approx}200 mg/cm{sup 2} in cryogenic target implosions. These correspond to an estimated peak fuel density in excess of 100 g/cm{sup 3} and are in good agreement with hydrodynamic simulations. The implosions were performed using an 18-kJ drive pulse designed to put the converging fuel on an adiabat of two. The polar-drive concept will allow direct-drive-ignition research on the National Ignition Facility while it is configured for indirect drive. Advanced ICF ignition concepts - fast ignition [Tabak et al., Phys. Plasmas 1, 1626 (1994)] and shock ignition [Betti et al., Phys. Rev. Lett. 98, 155001 (2007)] - have the potential to significantly reduce ignition driver energies and/or provide higher target gain.

  11. The Fight Against Teenage Drunk Driving: Saving Lives and Keeping Preventable Injuries out of the Emergency Department

    E-Print Network [OSTI]

    Jakle, Hal; Spjute, Adam

    2012-01-01

    S tudent S ection The Fight Against Teenage Drunk Driving:AAEM Newsletter Jakle Fight Against Teenage Drunk Driving

  12. Simulations of Plug-in Hybrid Vehicles Using Advanced Lithium Batteries and Ultracapacitors on Various Driving Cycles

    E-Print Network [OSTI]

    Burke, Andy; Zhao, Hengbing

    2010-01-01

    ex> energy storage 2 drive cycle vehicle cycle, the vehicle had blended operation (engine and electric drive

  13. Computer-Aided Engineering for Electric Drive Vehicle Batteries (CAEBAT) (Presentation)

    SciTech Connect (OSTI)

    Pesaran, A. A.

    2011-05-01

    This presentation describes NREL's computer aided engineering program for electric drive vehicle batteries.

  14. Behavioral Response to Hydrogen Fuel Cell Vehicles and Refueling: Results of California Drive Clinics

    E-Print Network [OSTI]

    Martin, Elliot W; Shaheen, Susan A; Lipman, T E; Lidicker, Jeffrey

    2009-01-01

    Martin, Elliot, Shaheen, Susan, Lipman, Timothy,OF CALIFORNIA DRIVE CLINICS Elliot Martin Graduate Student

  15. High-Power Converters and AC Drives IEEE PESC2005 Tutorial

    E-Print Network [OSTI]

    Wu, Bin

    Overview · MV Drive Applications Industry Application Examples Petrochemical Pipeline pumps, gas Introduction Main Topics · Medium Voltage (MV) Drive Overview · High Power Converter Topologies · MV Industrial Topic 1 Introduction MV Drive Overview · MV Drive Market Survey Main purpose for high-power fan/pump

  16. Designing Effective Incentives to Drive Residential Retrofit Program Participation (Text Version)

    Broader source: Energy.gov [DOE]

    Transcript of the webinar, "Designing Effective Incentives to Drive Residential Retrofit Program Participation."

  17. Initial Low Recycling Improving Confinement and Current Drive in Advanced Tokamak (AT) and Hybrid Scenarios

    E-Print Network [OSTI]

    Initial Low Recycling Improving Confinement and Current Drive in Advanced Tokamak (AT) and Hybrid Scenarios

  18. Drive train design, construction, and evaluation for a powered cart for third world farmers 

    E-Print Network [OSTI]

    Kittelson, David Andrew

    1986-01-01

    of the broader goal of developing a rugged, safe, and reliable 500 kg capacity vehicle that will cost the farmers less than USS 1000. The drive train includes a torque converter, a v-belt drive with a large plywood pulley, a chain drive, and a solid drive... DEDICATION. ACRNOWLEDGNENT. . LIST OF TABLES. iv vii i LIST OF FIGURES 1 INTRODUCTION. 2 REVIEW OF LITERATURE 2. 1 Power Source 2. 2 Preliminary Drive Options 2. 3 Belt Drives. 2. 4 Chain Drives 10 13 2. 5 Differentials vs. Solid Axles. . 2. 6...

  19. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  20. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  1. FY2014 Electric Drive Technologies Annual Progress Report

    SciTech Connect (OSTI)

    2014-12-01

    The Electric Drive Technologies research and development (R&D) subprogram within the DOE Vehicle Technologies Office (VTO) provides support and guidance for many cutting-edge automotive technologies under development. Research is focused on developing power electronics (PE), electric motor, and traction drive system (TDS) technologies that will reduce system cost and improve their efficiency in transforming battery energy to useful work. The R&D is also aimed at better understanding and improving how various components of tomorrow’s automobiles will function as a unified system to improve fuel efficiency.

  2. High-current cyclotron to drive an electronuclear assembly

    E-Print Network [OSTI]

    Alenitsky, Yu G

    2002-01-01

    The proposal on creation of a high-current cyclotron complex for driving an electronuclear assembly reported at the 17th Meeting on Accelerators of Charged Particles is discussed. Some changes in the basic design parameters of the accelerator are considered in view of new results obtained in the recent works. It is shown that the cyclotron complex is now the most real and cheapest accelerator for production of proton beams with a power of up to 10 MW. Projects on design of a high-current cyclotron complex for driving an electronuclear subcritical assembly are presented.

  3. Electric machine and current source inverter drive system

    DOE Patents [OSTI]

    Hsu, John S

    2014-06-24

    A drive system includes an electric machine and a current source inverter (CSI). This integration of an electric machine and an inverter uses the machine's field excitation coil for not only flux generation in the machine but also for the CSI inductor. This integration of the two technologies, namely the U machine motor and the CSI, opens a new chapter for the component function integration instead of the traditional integration by simply placing separate machine and inverter components in the same housing. Elimination of the CSI inductor adds to the CSI volumetric reduction of the capacitors and the elimination of PMs for the motor further improve the drive system cost, weight, and volume.

  4. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  5. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  6. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  7. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  8. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  9. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing, E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Chen, Weixi [State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Ding, Ying, E-mail: Ying.Ding@glasgow.ac.uk [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  10. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  11. Electrical degradation mechanisms of RF power GaAs PHEMTs

    E-Print Network [OSTI]

    Villanueva, Anita A. (Anita Ariel), 1978-

    2007-01-01

    GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability ...

  12. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  13. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  14. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  15. Gas Powered Air Conditioning Absorption vs. Engine-Drive 

    E-Print Network [OSTI]

    Phillips, J. N.

    1996-01-01

    not a new technology at the time, neither was the gas engine. But now in the 19901s, gas engine-drive (GED) chillers have "hit" the air conditioning market with a "bang". In the Lone Star Gas Company area in 1995, GED chillers are now being considered...

  16. Important driving forces in livestock production and agriculture

    E-Print Network [OSTI]

    Archer, Steven R.

    global shifts in consumption, marketing, production and trade: Rising incomes. Demographic shifts#12;Important driving forces in livestock production and agriculture are responsible for major the past four decades, but increasing trends due to changes in land use and crop production shifting from

  17. The driving force of plate tectonics evaluated in spherical coordinates 

    E-Print Network [OSTI]

    Donahue, John Michael

    1985-01-01

    &' + Ri according to the force balance equation of Garison et al (1983) . The age weighting for a ridge-push driving force model is only the age, t. 13 magnetic linea tio ns I subduction boundary force vector FIG. 4. Trench segmentation scheme. I...

  18. Building Life Cycle Assessment: Marine Drive Residence at

    E-Print Network [OSTI]

    and the results for Marine Drive Residence were compared with other residences studied on a per square foot basis that was not completely finished being developed (ie. build 51 of version 4). In addition, an energy model was prepared................................................................................................................ 10 3.1.6 Footings.................................

  19. Driving Pattern Recognition for Control of Hybrid Electric Trucks

    E-Print Network [OSTI]

    Peng, Huei

    strategy is to minimize fuel consumption and engine-out NOx and PM emissions on a set of diversified is selected adaptively. This "multi-mode" control scheme was tested on several driving cycles and was found was initiated, aiming to duplicate the success of the hybrid powertrain on passenger cars to light and heavy

  20. Fuzzy logic control implementation in sensorless PM drive systems

    E-Print Network [OSTI]

    , Egypt Abstract The PM motor drive systems are becoming particularly popular in many industrial power switches are controlled directly from the rotor position sensor. An open-loop configuration is essential for controlling the power devices of the inverter. The main problem with present rotor position

  1. Series Input Modular Architecture for Driving Multiple LEDs

    E-Print Network [OSTI]

    regulation is provided using a prototype of the proposed system with four series buck- boost converter cells, zane}@colorado.edu Abstract ­ This paper introduces a modular power converter architecture based on series input connected converter cells with independent outputs that each drive a small series string

  2. Improved current and charge amplifiers for driving piezoelectric loads

    E-Print Network [OSTI]

    Fleming, Andrew J.

    across the diverse literature involving piezoelectric applications is the problem of hysteresis5,7 . WhenImproved current and charge amplifiers for driving piezoelectric loads Andrew J. Fleming and S. O, Callaghan 2308, Australia. ABSTRACT Piezoelectric transducers are known to exhibit less hysterisis when

  3. Physical Mechanisms Driving Harmful Algal Blooms Along the Texas Coast 

    E-Print Network [OSTI]

    Ogle, Marcus 1982-

    2012-12-12

    -Louisiana shelf (TLS) however, blooms of K. brevis are infrequent and sporadic. While much is known of the blooms along the WFS due to their frequent presence, little is known of the mechanisms driving the blooms along the TLS due to their inconsistent presence...

  4. innovati nWind Turbine Design Innovations Drive Industry Transformation

    E-Print Network [OSTI]

    innovati nWind Turbine Design Innovations Drive Industry Transformation For more than 20 years. Tackling Turbine Blade Inefficiencies In 1984, NREL researchers began investigating problems with wind turbine blade designs. Inefficiency was a significant barrier to lowering the cost of wind energy

  5. Saving power without compromising disk drive reliability Xenia Mountrouidou

    E-Print Network [OSTI]

    Butt, Ali R.

    Saving power without compromising disk drive reliability Xenia Mountrouidou College of William intervals for power savings within strict constraints: first, it is imperative to contain the delays in service of IO requests that occur during power savings since the time to bring up the disk

  6. Driving Major Solar Flares and Eruptions: Carolus J. Schrijver

    E-Print Network [OSTI]

    Schrijver, Karel

    Driving Major Solar Flares and Eruptions: A Review Carolus J. Schrijver Lockheed Martin Adv. Techn: emerging flux 1 Introduction We have known of the phenomenon called 'solar flare' ever since the first,000 refereed publications with the words 'flare' and 'Sun' or 'solar' in the abstract. Even the limited focus

  7. Computer Simulation Suggests Mechanisms That Drive Jovian Jet Streams

    E-Print Network [OSTI]

    Computer Simulation Suggests Mechanisms That Drive Jovian Jet Streams 06 September 2005 Lori Stiles activity may explain the multiple east-west jet streams on Jupiter and Saturn and even produce strong winds are driven. Scientists have been trying to understand the mechanisms that form the jet streams and control

  8. Anti-cancer Technology Summary 121 Research Drive, Suite 501

    E-Print Network [OSTI]

    Peak, Derek

    Anti-cancer Technology Summary 121 Research Drive, Suite 501 Saskatoon, SK, S7N 1K2 Tel: (306) 966 cancers are ranked 2ed , 3ed and 11th of the most diagnosed cancers (National Cancer Institute, USA cancer cells but also healthy ones. A great opportunity exists for targeted therapies for the use solely

  9. nrel.gov/continuum Issue 3 Driving Solar Innovations from

    E-Print Network [OSTI]

    nrel.gov/continuum Issue 3 Spectrum The NREL of NREL Leads Driving Solar Innovations from Reaping a Wind Farm Modeling Research Laboratory to Marketplace Harvest of Hope Clean Energy Innovation NREL Visitors touring the National Renewable Energy Laboratory (NREL) are often amazed at the scope of our

  10. Beyond ITER: RF Heating and Current Drive Issues for DEMO

    E-Print Network [OSTI]

    Princeton Plasma Physics Laboratory

    Current devices Need flexible RF systems for heating, CD, start-up, instability suppression, and profileBeyond ITER: RF Heating and Current Drive Issues for DEMO C. K. Phillips, J. C. Hosea, G. Taylor under development ­ May need Lower Hybrid for r/a > 0.6 (not currently on ITER) ­ Need feedback control

  11. Meiotic drive and sex determination: molecular and cytological mechanisms

    E-Print Network [OSTI]

    Rutkowska, Joanna

    Review Meiotic drive and sex determination: molecular and cytological mechanisms of sex ratio across ecological and social environments should favour the evolution of sex-determining mechanisms that enable adjustment of brood sex ratio to the context of breeding. Despite the expectation that genetic sex

  12. Battery-Aware Energy-Optimal Electric Vehicle Driving Management

    E-Print Network [OSTI]

    Al Faruque, Mohammad Abdullah

    of replacing the battery, e.g. 12,000$ for Tesla Model S 85KWh [4] and 5,500$ for Nissan Leaf S [5], extendingBattery-Aware Energy-Optimal Electric Vehicle Driving Management Korosh Vatanparvar, Jiang Wan environmental concerns, e.g. air pollution. However, EVs pose new challenges regarding their Battery Life

  13. Compatibility Between GFCI Breakers and Household Adjustable Speed Drives

    E-Print Network [OSTI]

    Kimball, Jonathan W.

    Compatibility Between GFCI Breakers and Household Adjustable Speed Drives Jonathan Kimball Senior circuit interrupter (GFCI) compatibility becomes crucial. As compared to industrial applications, the GFCI response of a commonly-used GFCI breaker is compared to the common-mode current of a commercially

  14. A novel Stirling engine with an elliptic drive

    SciTech Connect (OSTI)

    Fang, H.W.; Herold, K.E.; Holland, H.M.; Beach, E.H.

    1996-12-31

    The concept of the Stirling cycle seems quite simple when presented as a cycle involving two constant temperature and two constant volume processes. The reality of machines that have evolved from the Stirling concept is considerably more complicated. Most real machines employ a drive mechanism that approximates a sinusoidal volume variation for each of the cylinders. This results in an overall volume variation that only poorly approximates the constant volume processes postulated in the classic definition of a Stirling cycle. The difficulties of achieving the piston motions necessary to attain the discontinuous motions of the classic cycle are well known and, as a result, the sinusoidal motions are widely accepted as an inevitable compromise. It is noted that free piston Stirling machines are not constrained in the same manner. However, the discussion here focuses on kinematic drive machines. In the current study, a Rider-type engine with an elliptic drive is modeled with the objective of clarifying the potential of a more ideal volume variation. This drive mechanism is the subject of a US Patent filed with Serial Number 08/360,052 on 20 December 1994.

  15. Microbial immobilization drives nitrogen cycling differences among plant species

    E-Print Network [OSTI]

    Thomas, David D.

    1840 Microbial immobilization drives nitrogen cycling differences among plant species Ramesh cycling. We examined four potential mechanisms of plant species effects on nitrogen (N) cycling. We found no species differences in gross ammonification suggesting there are no changes in the ecosystem N cycling

  16. Physical model of a hybrid electric drive train

    E-Print Network [OSTI]

    Young, Brady W. (Brady William)

    2006-01-01

    A motor and flywheel system was designed to simulate the dynamics of the electric drive train and inertial mass of a hybrid electric vehicle. The model will serve as a test bed for students in 2.672 to study the energy ...

  17. Electric Drive Vehicles: A Huge New Distributed Energy Resource

    E-Print Network [OSTI]

    Firestone, Jeremy

    Electric Drive Vehicles: A Huge New Distributed Energy Resource Alec Brooks AC Propulsion, Inc. San Economist, (Feb 8, 2001) "We can use the energy unit in this car for homes or stationary power." "When Dimas, California www.acpropulsion.com #12;The Old and the New.. Old way of thinking: Electric vehicles

  18. Aalborg Universitet Product Sound: Acoustically pleasant motor drives

    E-Print Network [OSTI]

    Mathe, Laszlo

    pleasant motor drives. Department of Energy Technology, Aalborg University. General rights Copyright Institute of Energy Technology June, 2010 #12;Aalborg University Department of Energy Technology Pontoppidanstraede 101 DK-9220 Aalborg East Denmark Web address: http://www.et.aau.dk Copyright © László Máthé, 2010

  19. 2030 SE Marine Science Drive Newport, Oregon 973665-5296

    E-Print Network [OSTI]

    Wright, Dawn Jeannine

    2030 SE Marine Science Drive Newport, Oregon 973665-5296 Telephone 541-867-0100 Fax 541-867-0138 Web Page http://hmsc.oregonstate.edu Oregon State University Hatfield Marine Science Center 2006.....................................2 Coastal Oregon Marine Experiment Station...........................2 OSU-COMES Seafood Research

  20. Implementation of an Innovative Bio Inspired GA and PSO Algorithm for Controller design considering Steam GT Dynamics

    E-Print Network [OSTI]

    Shivakumar, R

    2010-01-01

    The Application of Bio Inspired Algorithms to complicated Power System Stability Problems has recently attracted the researchers in the field of Artificial Intelligence. Low frequency oscillations after a disturbance in a Power system, if not sufficiently damped, can drive the system unstable. This paper provides a systematic procedure to damp the low frequency oscillations based on Bio Inspired Genetic (GA) and Particle Swarm Optimization (PSO) algorithms. The proposed controller design is based on formulating a System Damping ratio enhancement based Optimization criterion to compute the optimal controller parameters for better stability. The Novel and contrasting feature of this work is the mathematical modeling and simulation of the Synchronous generator model including the Steam Governor Turbine (GT) dynamics. To show the robustness of the proposed controller, Non linear Time domain simulations have been carried out under various system operating conditions. Also, a detailed Comparative study has been don...

  1. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  2. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    SciTech Connect (OSTI)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Soluyanov, Andrei A.; Timoshina, Nailya Kh. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation); Gudovskikh, Alexander S. [Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to ?190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from ?20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

  3. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  4. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01

    assuming the material growth technology allows for all ofand a relatively immature growth technology, as well as theof the art for InGaN growth technology. Epitaxial growth of

  5. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Sztein, Alexander, E-mail: asztein@umail.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9?W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  6. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors 

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31

    production is projected to consume ~100,000 wafers per year by 2015 (Yole Development, “Power GaN – 2012 Edition”), this manufacturing breakthrough represents potential savings of ~$17 million per year....

  7. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

    E-Print Network [OSTI]

    Florida, University of

    2011; published online 21 March 2011 A subnanometer thick interfacial oxide layer present between used to characterize a Ni/AlGaN interfacial oxide layer with subnanometer thickness. The semiconducting

  8. Polar-direct-drive experiments on the National Ignition Facility

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hohenberger, M.; Radha, P. B.; Myatt, J. F.; LePape, S.; Marozas, J. A.; Marshall, F. J.; Michel, D. T.; Regan, S. P.; Seka, W.; Shvydky, A.; et al

    2015-05-11

    To support direct-drive inertial confinement fusion experiments at the National Ignition Facility (NIF) [G. H. Miller, E. I. Moses, and C. R. Wuest, Opt. Eng. 43, 2841 (2004)] in its indirect-drive beam configuration, the polar-direct-drive (PDD) concept [S. Skupsky et al., Phys. Plasmas 11, 2763 (2004)] has been proposed. Ignition in PDD geometry requires direct-drive–specific beam smoothing, phase plates, and repointing the NIF beams toward the equator to ensure symmetric target irradiation. First experiments to study the energetics and preheat in PDD implosions at the NIF have been performed. These experiments utilize the NIF in its current configuration, including beammore »geometry, phase plates, and beam smoothing. Room-temperature, 2.2-mm-diam plastic shells filled with D? gas were imploded with total drive energies ranging from ~500 to 750 kJ with peak powers of 120 to 180 TW and peak on-target irradiances at the initial target radius from 8 10¹? to 1.2 10¹?W/cm². Results from these initial experiments are presented, including measurements of shell trajectory, implosion symmetry, and the level of hot-electron preheat in plastic and Si ablators. Experiments are simulated with the 2-D hydrodynamics code DRACO including a full 3-D ray-trace to model oblique beams, and models for nonlocal electron transport and cross-beam energy transport (CBET). These simulations indicate that CBET affects the shell symmetry and leads to a loss of energy imparted onto the shell, consistent with the experimental data.« less

  9. Polar-direct-drive experiments on the National Ignition Facility

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hohenberger, M. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States)] (ORCID:0000000258879711); Radha, P. B. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Myatt, J. F. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); LePape, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Marozas, J. A. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Marshall, F. J. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Michel, D. T. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States)] (ORCID:0000000166894359); Regan, S. P. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Seka, W. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Shvydky, A. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Sangster, T. C. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States)] (ORCID:0000000340402672); Bates, J. W. [U. S. Naval Research Lab., Washington, DC (United States)] (ORCID:0000000188087240); Betti, R. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Boehly, T. R. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Bonino, M. J. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Casey, D. T. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Collins, T. J. B. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Craxton, R. S. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States)] (ORCID:0000000158858227); Delettrez, J. A. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Edgell, D. H. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Epstein, R. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States)] (ORCID:0000000340628444); Fiksel, G. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Fitzsimmons, P. [General Atomics, San Diego, CA (United States); Frenje, J. A. [MIT (Massachusetts Inst. of Technology), Cambridge, MA (United States)] (ORCID:0000000168460378); Froula, D. H. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Goncharov, V. N. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Harding, D. R. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Kalantar, D. H. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Karasik, M. [U. S. Naval Research Lab., Washington, DC (United States); Kessler, T. J. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Kilkenny, J. D. [General Atomics, San Diego, CA (United States); Knauer, J. P. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Kurz, C. [General Atomics, San Diego, CA (United States); Lafon, M. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); LaFortune, K. N. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); MacGowan, B. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Mackinnon, A. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); MacPhee, A. G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)] (ORCID:0000000341604479); McCrory, R. L. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); McKenty, P. W. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States); Meeker, J. F. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Meyerhofer, D. D. [Lab. for Laser Energetics, University of Rochester, Rochester, NY (United States)

    2015-05-01

    To support direct-drive inertial confinement fusion experiments at the National Ignition Facility (NIF) [G. H. Miller, E. I. Moses, and C. R. Wuest, Opt. Eng. 43, 2841 (2004)] in its indirect-drive beam configuration, the polar-direct-drive (PDD) concept [S. Skupsky et al., Phys. Plasmas 11, 2763 (2004)] has been proposed. Ignition in PDD geometry requires direct-drive–specific beam smoothing, phase plates, and repointing the NIF beams toward the equator to ensure symmetric target irradiation. First experiments to study the energetics and preheat in PDD implosions at the NIF have been performed. These experiments utilize the NIF in its current configuration, including beam geometry, phase plates, and beam smoothing. Room-temperature, 2.2-mm-diam plastic shells filled with D? gas were imploded with total drive energies ranging from ~500 to 750 kJ with peak powers of 120 to 180 TW and peak on-target irradiances at the initial target radius from 8 10¹? to 1.2 10¹?W/cm². Results from these initial experiments are presented, including measurements of shell trajectory, implosion symmetry, and the level of hot-electron preheat in plastic and Si ablators. Experiments are simulated with the 2-D hydrodynamics code DRACO including a full 3-D ray-trace to model oblique beams, and models for nonlocal electron transport and cross-beam energy transport (CBET). These simulations indicate that CBET affects the shell symmetry and leads to a loss of energy imparted onto the shell, consistent with the experimental data.

  10. Polar-direct-drive experiments on the national ignition facilitya)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hohenberger, M.; Radha,, P. B.; Myatt, J. F.; LePape, S.; Marozas,, J. A.; Marshall, F. J.; Michel, D. T.; Regan, S. P.; Seka, W.; Shvydky, A.; et al

    2015-05-01

    To support direct-drive inertial confinement fusion experiments at the National Ignition Facility (NIF) [G. H. Miller, E. I. Moses, and C. R. Wuest, Opt. Eng. 43, 2841 (2004)] in its indirect-drive beam configuration, the polar-direct-drive (PDD) concept [S. Skupsky et al., Phys. Plasmas 11, 2763 (2004)] has been proposed. Ignition in PDD geometry requires direct-drive–specific beam smoothing, phase plates, and repointing the NIF beams toward the equator to ensure symmetric target irradiation. First experiments to study the energetics and preheat in PDD implosions at the NIF have been performed. These experiments utilize the NIF in its current configuration, including beammore »geometry, phase plates, and beam smoothing. Room-temperature, 2.2-mm-diam plastic shells filled with D? gas were imploded with total drive energies ranging from ~500 to 750 kJ with peak powers of 120 to 180 TW and peak on-target irradiances at the initial target radius from 8 x 10¹? to 1.2 x 10¹?W/cm². Results from these initial experiments are presented, including measurements of shell trajectory, implosion symmetry, and the level of hot-electron preheat in plastic and Si ablators. Experiments are simulated with the 2-D hydrodynamics code DRACO including a full 3-D ray-trace to model oblique beams, and models for nonlocal electron transport and cross-beam energy transport (CBET). These simulations indicate that CBET affects the shell symmetry and leads to a loss of energy imparted onto the shell, consistent with the experimental data.« less

  11. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigör, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  12. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect (OSTI)

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Sfaxi, L. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Universite de Sousse Faculte des Sciences de Monastir, Avenue de l'Environnement 5019 Monastir (Tunisia); Bru-Chevallier, C. [Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  13. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  14. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  15. Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well

    E-Print Network [OSTI]

    Jalali. Bahram

    Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

  16. Industrial Feedstock Flexibility Workshop Results

    SciTech Connect (OSTI)

    Ozokwelu, Dickson; Margolis, Nancy; Justiniano, Mauricio; Monfort, Joe; Brueske, Sabine; Sabouni, Ridah

    2009-08-01

    This report (PDF 649 KB) summarizes the results of the 2009 Industrial Feedstock Flexibility Workshop, which took place in Atlanta, GA on August 19-20, 2009.

  17. Th

    Broader source: Energy.gov (indexed) [DOE]

    I 2 S-LWR Integral Inherently Safe Light Water Reactor Bojan Petrovic Nuclear and Radiological Engineering Georgia Institute of Technology, Atlanta, GA, USA DOE-NE Materials...

  18. RESIDENTIAL THERMOSTATS: COMFORT CONTROLS IN CALIFORNIA HOMES

    E-Print Network [OSTI]

    Meier, Alan K.

    2008-01-01

    for Residential Winter and Summer Air Conditioning.Air Conditioning Contractors of America. Washington, DC.refrigerating and Air-conditioning Engineers, Atlanta, GA.

  19. Securing Wireless Data Networks against Eavesdropping Using Smart Antennas Sriram Lakshmanan, Cheng-Lin Tsao, Raghupathy Sivakumar

    E-Print Network [OSTI]

    Sivakumar, Raghupathy

    Securing Wireless Data Networks against Eavesdropping Using Smart Antennas Sriram Lakshmanan, Cheng-Lin Tsao, Raghupathy Sivakumar Georgia Institute of Technology Atlanta,GA,USA {sriram

  20. Context-Sensitive Resource Discovery Guanling Chen and David Kotz

    E-Print Network [OSTI]

    Kotz, David

    and/or a fee. SIGCSE'98. Atlanta, GA, USA. Copyright 1998 ACM 0-89791-994-7/98/2...$5.00. If we want