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Sample records for doping dual-gated bilayer

  1. Development of Dual-Gated Bilayer Graphene Device Structures...

    Office of Scientific and Technical Information (OSTI)

    Development of Dual-Gated Bilayer Graphene Device Structures. Citation Details In-Document Search Title: Development of Dual-Gated Bilayer Graphene Device Structures. Abstract not ...

  2. A two-fold reduction in measurement time for neutron assay: Initial tests of a prototype dual-gated shift register

    SciTech Connect (OSTI)

    Stewart, J.E.; Bourret, S.C.; Krick, M.S.; Hansen, W.J.; Harker, W.C.

    1996-09-01

    Neutron coincidence counting (NCC) is used routinely around the world for nondestructive mass assay of uranium and plutonium in many forms, including waste. Compared with other methods, NCC is generally the most flexible, economic, and rapid. Many applications of NCC would benefit from a reduction in counting time required for a fixed random error. We have developed and tested the first prototype of a dual- gated, shift-register-based electronics unit that offers the potential of decreased measurement time for all passive and active NCC applications.

  3. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S.; Kodera, T.; Takeda, K.; Obata, T.; Tarucha, S.

    2014-05-28

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  4. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Twist Solves Bilayer Graphene Mystery Twist Solves Bilayer Graphene Mystery Print Wednesday, 26 March 2014 00:00 Researchers have discovered a unique new twist to the story of...

  5. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bilayer Graphene Gets a Bandgap Bilayer Graphene Gets a Bandgap Print Wednesday, 26 August 2009 00:00 Graphene is the two-dimensional crystalline form of carbon whose extraordinary...

  6. Immobilized lipid-bilayer materials

    DOE Patents [OSTI]

    Sasaki, Darryl Y.; Loy, Douglas A.; Yamanaka, Stacey A.

    2000-01-01

    A method for preparing encapsulated lipid-bilayer materials in a silica matrix comprising preparing a silica sol, mixing a lipid-bilayer material in the silica sol and allowing the mixture to gel to form the encapsulated lipid-bilayer material. The mild processing conditions allow quantitative entrapment of pre-formed lipid-bilayer materials without modification to the material's spectral characteristics. The method allows for the immobilization of lipid membranes to surfaces. The encapsulated lipid-bilayer materials perform as sensitive optical sensors for the detection of analytes such as heavy metal ions and can be used as drug delivery systems and as separation devices.

  7. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Twist Solves Bilayer Graphene Mystery Twist Solves Bilayer Graphene Mystery Print Wednesday, 26 March 2014 00:00 Researchers have discovered a unique new twist to the story of graphene and, in the process, appear to have solved a mystery that has held back device development. Working at ALS Beamline 7.0.1, a research team applied angle-resolved photoelectron spectroscopy (ARPES) to bilayer graphene. Through direct band-structure measurements and calculations, they discovered that in the stacking

  8. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bilayer Graphene Gets a Bandgap Bilayer Graphene Gets a Bandgap Print Wednesday, 26 August 2009 00:00 Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric

  9. Passivating overcoat bilayer for multilayer reflective coatings...

    Office of Scientific and Technical Information (OSTI)

    The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top ... overcoat; bilayer; comprises; layer; silicon; beryllium; underneath; top; layer; ...

  10. Lipid bilayers on nano-templates

    DOE Patents [OSTI]

    Noy, Aleksandr; Artyukhin, Alexander B.; Bakajin, Olgica; Stoeve, Pieter

    2009-08-04

    A lipid bilayer on a nano-template comprising a nanotube or nanowire and a lipid bilayer around the nanotube or nanowire. One embodiment provides a method of fabricating a lipid bilayer on a nano-template comprising the steps of providing a nanotube or nanowire and forming a lipid bilayer around the polymer cushion. One embodiment provides a protein pore in the lipid bilayer. In one embodiment the protein pore is sensitive to specific agents

  11. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    work, Kim et al. demonstrate that a slight twisting of the layers explains why. The Dirac spectrum of bilayer graphene when the two layers are exactly aligned (left) shifts...

  12. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a...

  13. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Twist Solves Bilayer Graphene Mystery Print Researchers have discovered a unique new twist to the story of graphene and, in the process, appear to have solved a mystery that has held back device development. Working at ALS Beamline 7.0.1, a research team applied angle-resolved photoelectron spectroscopy (ARPES) to bilayer graphene. Through direct band-structure measurements and calculations, they discovered that in the stacking of graphene monolayers, subtle misalignments arise, creating an

  14. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Twist Solves Bilayer Graphene Mystery Print Researchers have discovered a unique new twist to the story of graphene and, in the process, appear to have solved a mystery that has held back device development. Working at ALS Beamline 7.0.1, a research team applied angle-resolved photoelectron spectroscopy (ARPES) to bilayer graphene. Through direct band-structure measurements and calculations, they discovered that in the stacking of graphene monolayers, subtle misalignments arise, creating an

  15. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Twist Solves Bilayer Graphene Mystery Print Researchers have discovered a unique new twist to the story of graphene and, in the process, appear to have solved a mystery that has held back device development. Working at ALS Beamline 7.0.1, a research team applied angle-resolved photoelectron spectroscopy (ARPES) to bilayer graphene. Through direct band-structure measurements and calculations, they discovered that in the stacking of graphene monolayers, subtle misalignments arise, creating an

  16. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Twist Solves Bilayer Graphene Mystery Print Researchers have discovered a unique new twist to the story of graphene and, in the process, appear to have solved a mystery that has held back device development. Working at ALS Beamline 7.0.1, a research team applied angle-resolved photoelectron spectroscopy (ARPES) to bilayer graphene. Through direct band-structure measurements and calculations, they discovered that in the stacking of graphene monolayers, subtle misalignments arise, creating an

  17. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Twist Solves Bilayer Graphene Mystery Print Researchers have discovered a unique new twist to the story of graphene and, in the process, appear to have solved a mystery that has held back device development. Working at ALS Beamline 7.0.1, a research team applied angle-resolved photoelectron spectroscopy (ARPES) to bilayer graphene. Through direct band-structure measurements and calculations, they discovered that in the stacking of graphene monolayers, subtle misalignments arise, creating an

  18. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Twist Solves Bilayer Graphene Mystery Print Researchers have discovered a unique new twist to the story of graphene and, in the process, appear to have solved a mystery that has held back device development. Working at ALS Beamline 7.0.1, a research team applied angle-resolved photoelectron spectroscopy (ARPES) to bilayer graphene. Through direct band-structure measurements and calculations, they discovered that in the stacking of graphene monolayers, subtle misalignments arise, creating an

  19. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bilayer Graphene Gets a Bandgap Print Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then

  20. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bilayer Graphene Gets a Bandgap Print Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then

  1. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bilayer Graphene Gets a Bandgap Print Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then

  2. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bilayer Graphene Gets a Bandgap Print Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then

  3. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bilayer Graphene Gets a Bandgap Print Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then

  4. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bilayer Graphene Gets a Bandgap Print Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then

  5. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bilayer Graphene Gets a Bandgap Print Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But without a bandgap, graphene's promise can't be realized. As with monolayer graphene, bilayer graphene also has a zero bandgap and thus behaves like a metal. But a bandgap can be introduced if an electric displacement field is applied to the two layers; the material then

  6. Atomistic mechanisms for bilayer growth of graphene on metal...

    Office of Scientific and Technical Information (OSTI)

    Atomistic mechanisms for bilayer growth of graphene on metal substrates Title: Atomistic mechanisms for bilayer growth of graphene on metal substrates Authors: Chen, Wei ; Cui, ...

  7. "Nanocrystal bilayer for tandem catalysis"

    SciTech Connect (OSTI)

    Yamada, Yusuke; Tsung, Chia Kuang; Huang, Wenyu; Huo, Ziyang; E.Habas, Susan E; Soejima, Tetsuro; Aliaga, Cesar E; Samorjai, Gabor A; Yang, Peidong

    2011-01-24

    Supported catalysts are widely used in industry and can be optimized by tuning the composition and interface of the metal nanoparticles and oxide supports. Rational design of metal-metal oxide interfaces in nanostructured catalysts is critical to achieve better reaction activities and selectivities. We introduce here a new class of nanocrystal tandem catalysts that have multiple metal-metal oxide interfaces for the catalysis of sequential reactions. We utilized a nanocrystal bilayer structure formed by assembling platinum and cerium oxide nanocube monolayers of less than 10 nm on a silica substrate. The two distinct metal-metal oxide interfaces, CeO2-Pt and Pt-SiO2, can be used to catalyse two distinct sequential reactions. The CeO2-Pt interface catalysed methanol decomposition to produce CO and H2, which were subsequently used for ethylene hydroformylation catalysed by the nearby Pt-SiO2 interface. Consequently, propanal was produced selectively from methanol and ethylene on the nanocrystal bilayer tandem catalyst. This new concept of nanocrystal tandem catalysis represents a powerful approach towards designing high-performance, multifunctional nanostructured catalysts

  8. Effect of molecular electrical doping on polyfuran based photovoltaic cells

    SciTech Connect (OSTI)

    Yu, Shuwen; Opitz, Andreas; Salzmann, Ingo; Frisch, Johannes; Cohen, Erez; Bendikov, Michael; Koch, Norbert

    2015-05-18

    The electronic, optical, and morphological properties of molecularly p-doped polyfuran (PF) films were investigated over a wide range of doping ratio in order to explore the impact of doping in photovoltaic applications. We find evidence for integer-charge transfer between PF and the prototypical molecular p-dopant tetrafluoro-tetracyanoquinodimethane (F4TCNQ) and employed the doped polymer in bilayer organic solar cells using fullerene as acceptor. The conductivity increase in the PF films at dopant loadings ?2% significantly enhances the short-circuit current of photovoltaic devices. For higher doping ratios, however, F4TCNQ is found to precipitate at the heterojunction between the doped donor polymer and the fullerene acceptor. Ultraviolet photoelectron spectroscopy reveals that its presence acts beneficial to the energy-level alignment by doubling the open-circuit voltage of solar cells from 0.2?V to ca. 0.4?V, as compared to pristine PF.

  9. Adsorption on tunable bilayer graphene: A model approach

    SciTech Connect (OSTI)

    Alisultanov, Z. Z., E-mail: zaur0102@gmail.com [Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation)

    2013-07-15

    The problem of the adsorption of atoms on the surface of tunable bilayer graphene is considered within the context of Anderson's model. Analytical expressions for the densities of states of bilayer graphene and an adatom are derived, and the charge exchange between adatoms and bilayer graphene is studied. The charge of adatoms of some elements is estimated. The change induced in the density of states of tunable bilayer graphene by the adsorption of atoms is explored.

  10. Bilayer graphene quantum dot defined by topgates

    SciTech Connect (OSTI)

    Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W.

    2014-06-21

    We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.

  11. How Bilayer Graphene Got a Bandgap

    ScienceCinema (OSTI)

    Feng Wang

    2010-01-08

    Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

  12. How Bilayer Graphene Got a Bandgap

    ScienceCinema (OSTI)

    Wang, Feng

    2013-05-29

    Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

  13. Bilayer membrane interactions with nanofabricated scaffolds

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Collier, Patrick C.

    2015-01-01

    Membrane function is facilitated by lateral organization within the lipid bilayer, including phase-separation of lipids into more ordered domains (lipid rafts) and anchoring of the membrane to a cytoskeleton. These features have proven difficult to reproduce in model membrane systems such as black lipid membranes, unilamellar vesicles and supported bilayers. However, advances in micro/nanofabrication have resulted in more realistic synthetic models of membrane-cytoskeleton interactions that can help uncover the design rules responsible for biological membrane formation and organization. This review will focus on describing micro-/nanostructured scaffolds that can emulate the connections of a cellular membrane to an underlying “cytoskeleton”. Thismore » includes molecular-based scaffolds anchored to a solid substrate through surface chemistry, solid-state supports modified by material deposition, lithography and etching, the creation of micro/nanoporous arrays, integration with microfluidics, and droplet-based bilayers at interfaces.Model systems such as these are increasing our understanding of structure and organization in cell membranes, and how they result in the emergence of functionality at the nanoscale.« less

  14. Self-folding graphene-polymer bilayers

    SciTech Connect (OSTI)

    Deng, Tao; Yoon, ChangKyu; Jin, Qianru; Li, Mingen; Liu, Zewen; Gracias, David H.

    2015-05-18

    In order to incorporate the extraordinary intrinsic thermal, electrical, mechanical, and optical properties of graphene with three dimensional (3D) flexible substrates, we introduce a solvent-driven self-folding approach using graphene-polymer bilayers. A polymer (SU-8) film was spin coated atop chemically vapor deposited graphene films on wafer substrates and graphene-polymer bilayers were patterned with or without metal electrodes using photolithography, thin film deposition, and etching. After patterning, the bilayers were released from the substrates and they self-folded to form fully integrated, curved, and folded structures. In contrast to planar graphene sensors on rigid substrates, we assembled curved and folded sensors that are flexible and they feature smaller form factors due to their 3D geometry and large surface areas due to their multiple rolled architectures. We believe that this approach could be used to assemble a range of high performance 3D electronic and optical devices of relevance to sensing, diagnostics, wearables, and energy harvesting.

  15. Parallel and Antiparallel Interfacial Coupling in AF-FM Bilayers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Parallel and Antiparallel Interfacial Coupling in AF-FM Bilayers Parallel and Antiparallel Interfacial Coupling in AF-FM Bilayers Print Wednesday, 30 August 2006 00:00 Cooling an antiferromagnetic-ferromagnetic bilayer in a magnetic field typically results in a remanent (zero-field) magnetization in the ferromagnet (FM) that is always in the direction of the field during cooling (positive Mrem). Strikingly, when FeF2 is the antiferromagnet (AF), cooling in a field can lead to a remanent

  16. Sub-wavelength antenna enhanced bilayer graphene tunable photodetector

    Office of Scientific and Technical Information (OSTI)

    (Patent) | SciTech Connect Patent: Sub-wavelength antenna enhanced bilayer graphene tunable photodetector Citation Details In-Document Search Title: Sub-wavelength antenna enhanced bilayer graphene tunable photodetector The integration of bilayer graphene with an absorption enhancing sub-wavelength antenna provides an infrared photodetector capable of real-time spectral tuning without filters at nanosecond timescales. Authors: Beechem, III, Thomas Edwin ; Howell, Stephen W. ; Peters, David

  17. Functional One-Dimensional Lipid Bilayers on Carbon Nanotube Templates

    SciTech Connect (OSTI)

    Artyukhin, A; Shestakov, A; Harper, J; Bakajin, O; Stroeve, P; Noy, A

    2004-07-23

    We present one-dimensional (1-D) lipid bilayer structures that integrate carbon nanotubes with a key biological environment-phospholipid membrane. Our structures consist of lipid bilayers wrapped around carbon nanotubes modified with a hydrophilic polymer cushion layer. Despite high bilayer curvature, the lipid membrane maintains its fluidity and can sustain repeated damage-recovery cycles. We also present the first evidence of spontaneous insertion of pore-forming proteins into 1-D lipid bilayers. These structures could lead to the development of new classes of biosensors and bioelectronic devices.

  18. Quantum Oscillations from Nodal Bilayer Magnetic Breakdown in...

    Office of Scientific and Technical Information (OSTI)

    Title: Quantum Oscillations from Nodal Bilayer Magnetic Breakdown in the Underdoped High Temperature Superconductor YBa2Cu3O6+x Authors: Sebastian, Suchitra E. ; Harrison, N. ; ...

  19. Self-assembled lipid bilayer materials

    DOE Patents [OSTI]

    Sasaki, Darryl Y.; Waggoner, Tina A.; Last, Julie A.

    2005-11-08

    The present invention is a self-assembling material comprised of stacks of lipid bilayers formed in a columnar structure, where the assembly process is mediated and regulated by chemical recognition events. The material, through the chemical recognition interactions, has a self-regulating system that corrects the radial size of the assembly creating a uniform diameter throughout most of the structure. The materials form and are stable in aqueous solution. These materials are useful as structural elements for the architecture of materials and components in nanotechnology, efficient light harvesting systems for optical sensing, chemical processing centers, and drug delivery vehicles.

  20. Performance of Anode-Supported Solid Oxide Fuel Cell with Thin Bi-Layer Electrolyte by Pulsed Laser Deposition

    SciTech Connect (OSTI)

    Lu, Zigui; Hardy, John S.; Templeton, Jared W.; Stevenson, Jeffry W.; Fisher, Daniel; Wu, Naijuan; Ignatiev, Alex

    2012-07-15

    Anode-supported yttria stabilized zirconia (YSZ)/samaria doped ceria (SDC) bi-layer electrolytes with uniform thickness and high density were fabricated by pulsed laser deposition at 1000 degrees C. Fuel cells with such bi-layer electrolytes were fabricated and tested, yielding open circuit voltages from 0.94 to 1.0 V at 600-700 degrees C. Power densities from 0.4 to 1.0 W cm{sup -2} at 0.7 V were achieved in air at temperatures of 600-700 degrees C. Cell performance was improved in flowing oxygen, with an estimated peak power density of over 2 W cm{sup -2} at 650 degrees C, assuming the same overall resistance over the entire range of current density. The high cell performance was attributed to the very low ohmic resistance of the fuel cell, owing to the small thickness of the electrolyte. Stable performance was also demonstrated in that the voltage of the fuel cell showed very little change at a constant current density of 1 A cm{sup -2} during more than 400 hours of operation at 650 degrees C in flowing oxygen. SEM analysis of the fuel cell after testing showed that the bi-layer electrolyte had retained its chemical and mechanical integrity.

  1. Interfacial Widths of Conjugated Polymer Bilayers

    SciTech Connect (OSTI)

    NCSU; UC Berkeley; UCSB; Advanced Light Source; Garcia, Andres; Yan, Hongping; Sohn, Karen E.; Hexemer, Alexander; Nguyen, Thuc-Quyen; Bazan, Guillermo C.; Kramer, Edward J.; Ade, Harald

    2009-08-13

    The interfaces of conjugated polyelectrolyte (CPE)/poly[2-methoxy-5-(2{prime}-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) bilayers cast from differential solvents are shown by resonant soft X-ray reflectivity (RSoXR) to be very smooth and sharp. The chemical interdiffusion due to casting is limited to less than 0.6 nm, and the interface created is thus nearly 'molecularly' sharp. These results demonstrate for the first time and with high precision that the nonpolar MEH-PPV layer is not much disturbed by casting the CPE layer from a polar solvent. A baseline is established for understanding the role of interfacial structure in determining the performance of CPE-based polymer light-emitting diodes. More broadly, we anticipate further applications of RSoXR as an important tool in achieving a deeper understanding of other multilayer organic optoelectronic devices, including multilayer photovoltaic devices.

  2. Direct in situ measurement of specific capacitance, monolayer tension, and bilayer tension in a droplet interface bilayer

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Taylor, Graham J.; Venkatesan, Guru A.; Collier, C. Patrick; Sarles, Stephen A.

    2015-08-05

    In this study, thickness and tension are important physical parameters of model cell membranes. However, traditional methods to measure these quantities require multiple experiments using separate equipment. This work introduces a new multi-step procedure for directly accessing in situ multiple physical properties of droplet interface bilayers (DIB), including specific capacitance (related to thickness), lipid monolayer tension in the Plateau-Gibbs border, and bilayer tension. The procedure employs a combination of mechanical manipulation of bilayer area followed by electrowetting of the capacitive interface to examine the sensitivities of bilayer capacitance to area and contact angle to voltage, respectively. These data allow formore » determining the specific capacitance of the membrane and surface tension of the lipid monolayer, which are then used to compute bilayer thickness and tension, respectively. The use of DIBs affords accurate optical imaging of the connected droplets in addition to electrical measurements of bilayer capacitance, and it allows for reversibly varying bilayer area. After validating the accuracy of the technique with diphytanoyl phosphatidylcholine (DPhPC) DIBs in hexadecane, the method is applied herein to quantify separately the effects on membrane thickness and tension caused by varying the solvent in which the DIB is formed and introducing cholesterol into the bilayer. Because the technique relies only on capacitance measurements and optical images to determine both thickness and tension, this approach is specifically well-suited for studying the effects of peptides, biomolecules, natural and synthetic nanoparticles, and other species that accumulate within membranes without altering bilayer conductance.« less

  3. Sub-wavelength antenna enhanced bilayer graphene tunable photodetector

    DOE Patents [OSTI]

    Beechem, III, Thomas Edwin; Howell, Stephen W.; Peters, David W.; Davids, Paul; Ohta, Taisuke

    2016-03-22

    The integration of bilayer graphene with an absorption enhancing sub-wavelength antenna provides an infrared photodetector capable of real-time spectral tuning without filters at nanosecond timescales.

  4. Parallel and Antiparallel Interfacial Coupling in AF-FM Bilayers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Parallel and Antiparallel Interfacial Coupling in AF-FM Bilayers Print Cooling an antiferromagnetic-ferromagnetic bilayer in a magnetic field typically results in a remanent (zero-field) magnetization in the ferromagnet (FM) that is always in the direction of the field during cooling (positive Mrem). Strikingly, when FeF2 is the antiferromagnet (AF), cooling in a field can lead to a remanent magnetization opposite to the field (negative Mrem). A collaboration led by researchers from the Stanford

  5. Parallel and Antiparallel Interfacial Coupling in AF-FM Bilayers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Parallel and Antiparallel Interfacial Coupling in AF-FM Bilayers Print Cooling an antiferromagnetic-ferromagnetic bilayer in a magnetic field typically results in a remanent (zero-field) magnetization in the ferromagnet (FM) that is always in the direction of the field during cooling (positive Mrem). Strikingly, when FeF2 is the antiferromagnet (AF), cooling in a field can lead to a remanent magnetization opposite to the field (negative Mrem). A collaboration led by researchers from the Stanford

  6. A half wave retarder made of bilayer subwavelength metallic apertures

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect A half wave retarder made of bilayer subwavelength metallic apertures Citation Details In-Document Search Title: A half wave retarder made of bilayer subwavelength metallic apertures The paper describes the fabrication of a half wave plate where the retardation in one polarization is achieved through tailoring the evanescent field coupling between two metal layers with arrays of subwavelength apertures. The main advantages of this design include

  7. Parallel and Antiparallel Interfacial Coupling in AF-FM Bilayers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Parallel and Antiparallel Interfacial Coupling in AF-FM Bilayers Print Cooling an antiferromagnetic-ferromagnetic bilayer in a magnetic field typically results in a remanent (zero-field) magnetization in the ferromagnet (FM) that is always in the direction of the field during cooling (positive Mrem). Strikingly, when FeF2 is the antiferromagnet (AF), cooling in a field can lead to a remanent magnetization opposite to the field (negative Mrem). A collaboration led by researchers from the Stanford

  8. Quantum Oscillations from Nodal Bilayer Magnetic Breakdown in the

    Office of Scientific and Technical Information (OSTI)

    Underdoped High Temperature Superconductor YBa2Cu3O6+x (Journal Article) | SciTech Connect Quantum Oscillations from Nodal Bilayer Magnetic Breakdown in the Underdoped High Temperature Superconductor YBa2Cu3O6+x Citation Details In-Document Search Title: Quantum Oscillations from Nodal Bilayer Magnetic Breakdown in the Underdoped High Temperature Superconductor YBa2Cu3O6+x Authors: Sebastian, Suchitra E. ; Harrison, N. ; Liang, Ruixing ; Bonn, D. A. ; Hardy, W. N. ; Mielke, C. H. ;

  9. Controlling the Polarization of Light with Bilayer Subwavelength Metallic

    Office of Scientific and Technical Information (OSTI)

    Apertures (Conference) | SciTech Connect Conference: Controlling the Polarization of Light with Bilayer Subwavelength Metallic Apertures Citation Details In-Document Search Title: Controlling the Polarization of Light with Bilayer Subwavelength Metallic Apertures Authors: Chan, Ho Bun [1] ; Marset, zsolt [2] ; Carr, D. W. [3] ; Bower, J. E. [4] ; Cirelli, R. A. [4] ; Klemens, F. [4] ; Mansfield, W. M. [4] ; Miner, J. F. [4] ; Pai, C. S. [4] ; Kravchenko, Ivan I [5] + Show Author Affiliations

  10. Predicting proton titration in cationic micelle and bilayer environments

    SciTech Connect (OSTI)

    Morrow, Brian H.; Shen, Jana K.; Eike, David M.; Murch, Bruce P.; Koenig, Peter H.

    2014-08-28

    Knowledge of the protonation behavior of pH-sensitive molecules in micelles and bilayers has significant implications in consumer product development and biomedical applications. However, the calculation of pK{sub a}s in such environments proves challenging using traditional structure-based calculations. Here we apply all-atom constant pH molecular dynamics with explicit ions and titratable water to calculate the pK{sub a} of a fatty acid molecule in a micelle of dodecyl trimethylammonium chloride and liquid as well as gel-phase bilayers of diethyl ester dimethylammonium chloride. Interestingly, the pK{sub a} of the fatty acid in the gel bilayer is 5.4, 0.4 units lower than that in the analogous liquid bilayer or micelle, despite the fact that the protonated carboxylic group is significantly more desolvated in the gel bilayer. This work illustrates the capability of all-atom constant pH molecular dynamics in capturing the delicate balance in the free energies of desolvation and Coulombic interactions. It also shows the importance of the explicit treatment of ions in sampling the protonation states. The ability to model dynamics of pH-responsive substrates in a bilayer environment is useful for improving fabric care products as well as our understanding of the side effects of anti-inflammatory drugs.

  11. Quantum anomalous Hall effect in single-layer and bilayer graphene...

    Office of Scientific and Technical Information (OSTI)

    Quantum anomalous Hall effect in single-layer and bilayer graphene Citation Details In-Document Search Title: Quantum anomalous Hall effect in single-layer and bilayer graphene ...

  12. Prediction of superconductivity in Li-intercalated bilayer phosphorene

    SciTech Connect (OSTI)

    Huang, G. Q.; Xing, Z. W.; Xing, D. Y.

    2015-03-16

    It is shown that bilayer phosphorene can be transformed from a direct-gap semiconductor to a BCS superconductor by intercalating Li atoms. For the Li-intercalated bilayer phosphorene, we find that the electron occupation of Li-derived band is small and superconductivity is intrinsic. With increasing the intercalation of Li atoms, both increased metallicity and strong electron-phonon coupling are favorable for the enhancement of superconductivity. The obtained electron-phonon coupling λ can be larger than 1 and the superconducting temperature T{sub c} can be increased up to 16.5 K, suggesting that phosphorene may be a good candidate for a nanoscale superconductor.

  13. Graphene Monolayer Rotation on Ni(111) Facilities Bilayer Graphene Growth

    SciTech Connect (OSTI)

    Batzill M.; Sutter P.; Dahal, A.; Addou, R.

    2012-06-11

    Synthesis of bilayer graphene by chemical vapor deposition is of importance for graphene-based field effect devices. Here, we demonstrate that bilayer graphene preferentially grows by carbon-segregation under graphene sheets that are rotated relative to a Ni(111) substrate. Rotated graphene monolayer films can be synthesized at growth temperatures above 650 C on a Ni(111) thin-film. The segregated second graphene layer is in registry with the Ni(111) substrate and this suppresses further C-segregation, effectively self-limiting graphene formation to two layers.

  14. Fusion Peptides Promote Formation of Bilayer Cubic Phases in Lipid

    Office of Scientific and Technical Information (OSTI)

    Dispersions. An X-Ray Diffraction Study (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Fusion Peptides Promote Formation of Bilayer Cubic Phases in Lipid Dispersions. An X-Ray Diffraction Study Citation Details In-Document Search Title: Fusion Peptides Promote Formation of Bilayer Cubic Phases in Lipid Dispersions. An X-Ray Diffraction Study Authors: Tenchov, Boris G. ; MacDonald, Robert C. ; Lentz, Barry R. [1] ; UNC) [2] ; Sofia-MED) [2] + Show Author

  15. Electronic band structure of magnetic bilayer graphene superlattices

    SciTech Connect (OSTI)

    Pham, C. Huy; Nguyen, T. Thuong

    2014-09-28

    Electronic band structure of the bilayer graphene superlattices with ?-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

  16. Negative terahertz conductivity in disordered graphene bilayers with population inversion

    SciTech Connect (OSTI)

    Svintsov, D.; Otsuji, T.; Ryzhii, V.; Mitin, V.; Shur, M. S.

    2015-03-16

    The gapless energy band spectra make the structures based on graphene and graphene bilayer with the population inversion to be promising media for the interband terahertz (THz) lasing. However, a strong intraband absorption at THz frequencies still poses a challenge for efficient THz lasing. In this paper, we show that in the pumped graphene bilayer, the indirect interband radiative transitions accompanied by scattering of carriers by disorder can provide a substantial negative contribution to the THz conductivity (together with the direct interband transitions). In the graphene bilayer on high-? substrates with point charged defects, these transitions substantially compensate the losses due to the intraband (Drude) absorption. We also demonstrate that the indirect interband contribution to the THz conductivity in a graphene bilayer with the extended defects (such as the charged impurity clusters) can surpass by several times the fundamental limit associated with the direct interband transitions, and the Drude conductivity as well. These predictions can affect the strategy of the graphene-based THz laser implementation.

  17. Direct in situ measurement of specific capacitance, monolayer tension, and bilayer tension in a droplet interface bilayer

    SciTech Connect (OSTI)

    Taylor, Graham J.; Venkatesan, Guru A.; Collier, C. Patrick; Sarles, Stephen A.

    2015-08-05

    In this study, thickness and tension are important physical parameters of model cell membranes. However, traditional methods to measure these quantities require multiple experiments using separate equipment. This work introduces a new multi-step procedure for directly accessing in situ multiple physical properties of droplet interface bilayers (DIB), including specific capacitance (related to thickness), lipid monolayer tension in the Plateau-Gibbs border, and bilayer tension. The procedure employs a combination of mechanical manipulation of bilayer area followed by electrowetting of the capacitive interface to examine the sensitivities of bilayer capacitance to area and contact angle to voltage, respectively. These data allow for determining the specific capacitance of the membrane and surface tension of the lipid monolayer, which are then used to compute bilayer thickness and tension, respectively. The use of DIBs affords accurate optical imaging of the connected droplets in addition to electrical measurements of bilayer capacitance, and it allows for reversibly varying bilayer area. After validating the accuracy of the technique with diphytanoyl phosphatidylcholine (DPhPC) DIBs in hexadecane, the method is applied herein to quantify separately the effects on membrane thickness and tension caused by varying the solvent in which the DIB is formed and introducing cholesterol into the bilayer. Because the technique relies only on capacitance measurements and optical images to determine both thickness and tension, this approach is specifically well-suited for studying the effects of peptides, biomolecules, natural and synthetic nanoparticles, and other species that accumulate within membranes without altering bilayer conductance.

  18. Graphene/ferroelectrics/graphene hybrid structure: Asymmetric doping of graphene layers

    SciTech Connect (OSTI)

    Duong, Dinh Loc; Lee, Si Young; Kim, Seong Kyu; Lee, Young Hee

    2015-06-15

    We report graphene/ferroelectric/graphene hybrid structure to demonstrate an asymmetrical doping in two graphene layers, one side with electrons and another side with holes. Two ferroelectrics, a poly(vinylidenefluoride) (PVDF) and a hydrofluorinated graphene, were used to demonstrate the concept with density functional calculations, revealing the Fermi level shift of 0.35 and 0.75?eV, respectively. This concept was confirmed by Raman spectroscopy using graphene/poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE))/graphene hybrid, which can easily form ?-phase close to our simulation model. G-band peak position was downshifted for electron doping and upshifted for hole doping. This hybrid structure opens an opportunity to study bilayer graphene system with a controllable thickness for a wide range of high carrier concentration.

  19. Piezoelectric enhancement by surface effect in hydrofluorinated graphene bilayer

    SciTech Connect (OSTI)

    Kim, Hye Jung; Noor-A-Alam, Mohammad; Shin, Young-Han

    2015-04-14

    We investigated the piezoelectricity of dipolar hydrofluorinated graphene (C{sub 2}HF){sub n} multilayers with first-principles calculations. Our results reveal that the dipole moment decreases as the number of layers increases, because electron and hole carriers are induced at the top and bottom layers due to the depolarization field. These carriers make (C{sub 2}HF){sub n} multilayers more stable by decreasing the depolarization field in the material. Through the calculation of the average layer piezoelectric stress constant e{sub 31}/ℓ in ℓ-layer chair (C{sub 2}HF){sub n} multilayers, we confirmed that the piezoelectricity of the bilayer is about three times larger than that of the monolayer and bulk material. Moreover, we found that the electron and hole carriers on the top and bottom layers played a significant role in the piezoelectric enhancement of the bilayer.

  20. Electrical oscillation in Pt/VO{sub 2} bilayer strips

    SciTech Connect (OSTI)

    Wang, Ying; Qi, Long; Xu, Yanjun; Wu, Yihong; Chai, Jianwei; Wang, Shijie; Yang, Yumeng; Tanaka, Hidekazu

    2015-02-14

    We report on the observation of stable electrical oscillation in Pt/vanadium dioxide (VO{sub 2}) bilayer strips, in which the Pt overlayer serves the dual purposes of heating up the VO{sub 2} and weakening the electric field in the VO{sub 2} layer. Systematic measurements in an ultrahigh vacuum nanoprobe system show that the oscillation frequency increases with the bias current and/or with decreasing device dimension. In contrast to most VO{sub 2}-based oscillators reported to date, which are electrically triggered, current-induced Joule heating in the Pt overlayer is found to play a dominant role in the generation of oscillation in Pt/VO{sub 2} bilayers. A simple model involving thermally triggered transition of VO{sub 2} on a heat sink is able to account for the experimental observations. The results in this work provide an alternative view of the triggering mechanism in VO{sub 2}-based oscillators.

  1. Enhancement of photoluminescence properties in ZnO/AlN bilayer

    Office of Scientific and Technical Information (OSTI)

    heterostructures grown by atomic layer deposition (Journal Article) | SciTech Connect Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition Citation Details In-Document Search Title: Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition The AlN/ZnO bilayer heterostructures were deposited on Si (100) substrate by thermal atomic layer deposition. X-ray diffraction results show

  2. Enhancement of photoluminescence properties in ZnO/AlN bilayer...

    Office of Scientific and Technical Information (OSTI)

    in ZnOAlN bilayer heterostructures grown by atomic layer deposition Citation Details In-Document Search Title: Enhancement of photoluminescence properties in ZnOAlN ...

  3. Isoelectronic co-doping

    DOE Patents [OSTI]

    Mascarenhas, Angelo

    2004-11-09

    Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  4. Specific heat of twisted bilayer graphene: Engineering phonons by atomic plane rotations

    SciTech Connect (OSTI)

    Nika, Denis L. [E. Pokatilov Laboratory of Physics and Engineering of Nanomaterials, Department of Physics and Engineering, Moldova State University, Chisinau MD-2009, Republic of Moldova (Moldova, Republic of); Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of CaliforniaRiverside, Riverside, California, 92521 (United States); Cocemasov, Alexandr I. [E. Pokatilov Laboratory of Physics and Engineering of Nanomaterials, Department of Physics and Engineering, Moldova State University, Chisinau MD-2009, Republic of Moldova (Moldova, Republic of); Balandin, Alexander A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of CaliforniaRiverside, Riverside, California, 92521 (United States)

    2014-07-21

    We have studied the phonon specific heat in single-layer, bilayer, and twisted bilayer graphene. The calculations were performed using the Born-von Karman model of lattice dynamics for intralayer atomic interactions and spherically symmetric interatomic potential for interlayer interactions. We found that at temperature T?bilayer graphene, and n?=?1.3 for the twisted bilayer graphene. The phonon specific heat reveals an intriguing dependence on the twist angle in bilayer graphene, which is particularly pronounced at low temperature. The results suggest a possibility of phonon engineering of thermal properties of layered materials by twisting the atomic planes.

  5. Melittin-induced cholesterol reorganization in lipid bilayer membranes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qian, Shuo; Heller, William T.

    2015-06-12

    The peptide melittin, a 26 amino acid, cationic peptide from honey bee (Apis mellifera) venom, disrupts lipid bilayer membranes in a concentration-dependent manner. Rather than interacting with a specific receptor, the peptide interacts directly with the lipid matrix of the membrane in a manner dependent on the lipid composition. Here, a small-angle neutron scattering study of the interaction of melittin with lipid bilayers made of mixtures of dimyristoylphosphatidylcholine (DMPC) and cholesterol (Chol) is presented. Through the use of deuterium-labeled DMPC, changes in the distribution of the lipid and cholesterol in unilamellar vesicles were observed for peptide concentrations below those thatmore » cause pores to form. In addition to disrupting the in-plane organization of Chol, melittin produces vesicles having inner and outer leaflet compositions that depend on the lipid–Chol molar ratio and on the peptide concentration. The changes seen at high cholesterol and low peptide concentration are similar to those produced by alamethicin (Qian, S. et al., J. Phys. Chem. B 2014, 118, 11200–11208), which points to an underlying physical mechanism driving the redistribution of Chol, but melittin displays an additional effect not seen with alamethicin. Furthermore, a model for how the peptide drives the redistribution of Chol is proposed. The results suggest that redistribution of the lipids in a target cell membrane by membrane active peptides takes places as a prelude to the lysis of the cell.« less

  6. The Molecular Structure of a Phosphatidylserine Bilayer Determined by Scattering and Molecular Dynamics Simulations

    SciTech Connect (OSTI)

    Pan, Jianjun [University of South Florida, Tampa (USF)] [University of South Florida, Tampa (USF); Cheng, Xiaolin [ORNL] [ORNL; Monticelli, Luca [Institut National de la Sant et de la Recherche Mdicale (INSERM) and INTS, France] [Institut National de la Sant et de la Recherche Mdicale (INSERM) and INTS, France; Heberle, Frederick A [ORNL] [ORNL; Kucerka, Norbert [Atomic Energy of Canada Limited (AECL), Canadian Neutron Beam Centre (CNBC) and Comenius University,] [Atomic Energy of Canada Limited (AECL), Canadian Neutron Beam Centre (CNBC) and Comenius University,; Tieleman, D. Peter [University of Calgary, ALberta, Canada] [University of Calgary, ALberta, Canada; Katsaras, John [ORNL] [ORNL

    2014-01-01

    Phosphatidylserine (PS) lipids play essential roles in biological processes, including enzyme activation and apoptosis. We report on the molecular structure and atomic scale interactions of a fluid bilayer composed of 1-palmitoyl-2-oleoyl-sn-glycero-3-phosphatidylserine (POPS). A scattering density profile model, aided by molecular dynamics (MD) simulations, was developed to jointly refine different contrast small-angle neutron and X-ray scattering data, which yielded a lipid area of 62.7 A2 at 25 C. MD simulations with POPS lipid area constrained at different values were also performed using all-atom and aliphatic united-atom models. The optimal simulated bilayer was obtained using a model-free comparison approach. Examination of the simulated bilayer, which agrees best with the experimental scattering data, reveals a preferential interaction between Na+ ions and the terminal serine and phosphate moieties. Long-range inter-lipid interactions were identified, primarily between the positively charged ammonium, and the negatively charged carboxylic and phosphate oxygens. The area compressibility modulus KA of the POPS bilayer was derived by quantifying lipid area as a function of surface tension from area-constrained MD simulations. It was found that POPS bilayers possess a much larger KA than that of neutral phosphatidylcholine lipid bilayers. We propose that the unique molecular features of POPS bilayers may play an important role in certain physiological functions.

  7. Corrugation of Phase-Separated Lipid Bilayers Supported by Nanoporous Silica Xerogel Surfaces

    SciTech Connect (OSTI)

    Goksu, E I; Nellis, B A; Lin, W; Satcher Jr., J H; Groves, J T; Risbud, S H; Longo, M L

    2008-10-30

    Lipid bilayers supported by substrates with nanometer-scale surface corrugations holds interest in understanding both nanoparticle-membrane interactions and the challenges of constructing models of cell membranes on surfaces with desirable properties, e.g. porosity. Here, we successfully form a two-phase (gel-fluid) lipid bilayer supported by nanoporous silica xerogel. Surface topology, diffusion, and lipid density in comparison to mica-supported lipid bilayers were characterized by AFM, FRAP, FCS, and quantitative fluorescence microscopy, respectively. We found that the two-phase lipid bilayer follows the xerogel surface contours. The corrugation imparted on the lipid bilayer results in a lipid density that is twice that on a flat mica surface. In direct agreement with the doubling of actual bilayer area in a projected area, we find that the lateral diffusion coefficient (D) of lipids on xerogel ({approx}1.7 {micro}m{sup 2}/s) is predictably lower than on mica ({approx}4.1 {micro}m{sup 2}/s) by both FRAP and FCS techniques. Furthermore, the gel-phase domains on xerogel compared to mica were larger and less numerous. Overall, our results suggest the presence of a relatively defect-free continuous two-phase bilayer that penetrates approximately midway into the first layer of {approx}50 nm xerogel beads.

  8. Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals

    SciTech Connect (OSTI)

    Li, Xufan; Basile Carrasco, Leonardo A; Yoon, Mina; Ma, Cheng; Puretzky, Alexander A; Lee, Jaekwang; Idrobo Tapia, Juan Carlos; Chi, Miaofang; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

    2015-01-01

    Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0 or 60 interlayer rotations. The commensurate stacking configurations (AA and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale and the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. The combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.

  9. Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xufan; Yoon, Mina; Puretzky, Alexander A; Lee, Jaekwang; Idrobo Tapia, Juan Carlos; Chi, Miaofang; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

    2015-01-01

    Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0 or 60 interlayer rotations. The commensurate stacking configurations (AA and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale andmore » the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. The combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.« less

  10. Axially Tapered And Bilayer Microchannels For Evaporative Cooling Devices

    DOE Patents [OSTI]

    Nilson, Robert; Griffiths, Stewart

    2005-10-04

    The invention consists of an evaporative cooling device comprising one or more microchannels whose cross section is axially reduced to control the maximum capillary pressure differential between liquid and vapor phases. In one embodiment, the evaporation channels have a rectangular cross section that is reduced in width along a flow path. In another embodiment, channels of fixed width are patterned with an array of microfabricated post-like features such that the feature size and spacing are gradually reduced along the flow path. Other embodiments incorporate bilayer channels consisting of an upper cover plate having a pattern of slots or holes of axially decreasing size and a lower fluid flow layer having channel widths substantially greater than the characteristic microscale dimensions of the patterned cover plate. The small dimensions of the cover plate holes afford large capillary pressure differentials while the larger dimensions of the lower region reduce viscous flow resistance.

  11. Spectroscopic signatures of AA' and AB stacking of chemical vapor deposited bilayer MoS2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xia, Ming; Li, Bo; Yin, Kuibo; Capellini, Giovanni; Niu, Gang; Gong, Yongji; Zhou, Wu; Ajayan, Pulickel M.; Xie, Ya -Hong

    2015-11-04

    We discuss prominent resonance Raman and photoluminescence spectroscopic differences between AA'and AB stacked bilayer molybdenum disulfide (MoS2) grown by chemical vapor deposition are reported. Bilayer MoS2 islands consisting of the two stacking orders were obtained under identical growth conditions. Also, resonance Raman and photoluminescence spectra of AA' and AB stacked bilayer MoS2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom.

  12. Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Montcalm, Claude (Livermore, CA); Stearns, Daniel G. (Los Altos, CA); Vernon, Stephen P. (Pleasanton, CA)

    1999-01-01

    A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.

  13. Doped zinc oxide microspheres

    DOE Patents [OSTI]

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-12-14

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  14. Doped zinc oxide microspheres

    DOE Patents [OSTI]

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  15. Correlation effects in (111) bilayers of perovskite transition-metal oxides

    SciTech Connect (OSTI)

    Okamoto, Satoshi; Zhu, Wenguang; Nomura, Yusuke; Arita, R.; Xiao, Di; Nagaosa, Naoto

    2014-01-01

    We investigate the correlation-induced Mott, magnetic, and topological phase transitions in artificial (111) bilayers of perovskite transition-metal oxides LaAuO3 and SrIrO3 for which the previous density-functional theory calculations predicted topological insulating states. Using the dynamical-mean-field theory with realistic band structures and Coulomb interactions, LaAuO3 bilayer is shown to be far away from a Mott insulating regime, and a topological-insulating state is robust. On the other hand, SrIrO3 bilayer is on the verge of an orbital-selective topological Mott transition and turns to a trivial insulator by an antiferromagnetic ordering. Oxide bilayers thus provide a novel class of topological materials for which the interplay between the spin-orbit coupling and electron-electron interactions is a fundamental ingredient.

  16. Enhanced sensitivity of a microfabricated resonator using a graphene-polystyrene bilayer membrane

    SciTech Connect (OSTI)

    Yun, Minhyuk; Lee, Eunho; Cho, Kilwon; Jeon, Sangmin

    2014-08-18

    A graphene layer was synthesized using chemical vapor deposition methods and a polystyrene solution was spin-cast onto the graphene film. The graphene-polystyrene bilayer membrane was attached between the two tines of a microfabricated quartz tuning fork (QTF). The modulus of the graphene-polystyrene bilayer was measured to be twice that of a pristine polystyrene membrane. Exposure of the membrane-coated QTF to ethanol vapor decreased the resonance frequency of the microresonator. The bilayer membrane-coated QTF produced a frequency change that was three times the change obtained using a polystyrene membrane-coated QTF, with a lower degree of degradation in the Q factor. The limit of detection of the bilayer membrane-coated QTF to ethanol vapor was determined to be 20 ppm.

  17. Quantum anomalous Hall effect in single-layer and bilayer graphene (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Quantum anomalous Hall effect in single-layer and bilayer graphene Citation Details In-Document Search Title: Quantum anomalous Hall effect in single-layer and bilayer graphene Authors: Tse, Wang-Kong ; Qiao, Zhenhua ; Yao, Yugui ; MacDonald, A. H. ; Niu, Qian Publication Date: 2011-04-26 OSTI Identifier: 1100329 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal Information: Journal Volume: 83; Journal Issue: 15; Journal ID:

  18. Doped colorimetric assay liposomes

    DOE Patents [OSTI]

    Charych, Deborah; Stevens, Raymond C.

    2001-01-01

    The present invention provides compositions comprising colorimetric assay liposomes. The present invention also provides methods for producing colorimetric liposomes and calorimetric liposome assay systems. In preferred embodiments, these calorimetric liposome systems provide high levels of sensitivity through the use of dopant molecules. As these dopants allow the controlled destabilization of the liposome structure, upon exposure of the doped liposomes to analyte(s) of interest, the indicator color change is facilitated and more easily recognized.

  19. Direct transfer and Raman characterization of twisted graphene bilayer

    SciTech Connect (OSTI)

    Othmen, R.; Ajlani, H.; Oueslati, M.; Cavanna, A.; Madouri, A.

    2015-03-09

    Twisted bilayer graphene (tBLG) is constituted of a two-graphene layer with a mismatch angle ? between the two hexagonal structures. It has recently attracted much attentionthanks to its diverse electronic and optical properties. Here, we study the tBLG fabricated by the direct transfer of graphene monolayer prepared by chemical vapor deposition (CVD) onto another CVD graphene layer remaining attached to the copper foil. We show that high quality and homogeneous tBLG can be obtained by the direct transfer which prevents interface contamination. In this situation, the top graphene layer plays a supporting mechanical role to the bottom graphene layer as confirmed by optical microscopy, scanning electron microscopy, and Raman spectroscopy measurements. The effect of annealing tBLG was also investigated using micro-Raman spectroscopy. The Raman spectra exhibit a splitting of the G peak as well as a change in the 2D band shape indicating a possible decoupling of the two monolayers. We attribute these changes to the different interactions of the top and bottom layers with the substrate.

  20. Theoretical study on strain induced variations in electronic properties of 2H-MoS{sub 2} bilayer sheets

    SciTech Connect (OSTI)

    Dong, Liang; Dongare, Avinash M.; Namburu, Raju R.; O'Regan, Terrance P.; Dubey, Madan

    2014-02-03

    The strain dependence of the electronic properties of bilayer sheets of 2H-MoS{sub 2} is studied using ab initio simulations based on density functional theory. An indirect band gap for bilayer MoS{sub 2} is observed for all variations of strain along the basal plane. Several transitions for the indirect band gap are observed for various strains for the bilayer structure. The variation of the band gap and the carrier effective masses for the holes and the electrons for the bilayer MoS{sub 2} structure under conditions of uniaxial strain, biaxial strain, as well as uniaxial stress is investigated.

  1. Nanoporous microbead supported bilayers: stability, physical characterization, and incorporation of functional transmembrane proteins.

    SciTech Connect (OSTI)

    Davis, Ryan W. (University of New Mexico, Albuquerque, NM); Brozik, James A. (University of New Mexico, Albuquerque, NM); Brozik, Susan Marie; Cox, Jason M.; Lopez, Gabriel P.; Barrick, Todd A.; Flores, Adrean

    2007-03-01

    The introduction of functional transmembrane proteins into supported bilayer-based biomimetic systems presents a significant challenge for biophysics. Among the various methods for producing supported bilayers, liposomal fusion offers a versatile method for the introduction of membrane proteins into supported bilayers on a variety of substrates. In this study, the properties of protein containing unilamellar phosphocholine lipid bilayers on nanoporous silica microspheres are investigated. The effects of the silica substrate, pore structure, and the substrate curvature on the stability of the membrane and the functionality of the membrane protein are determined. Supported bilayers on porous silica microspheres show a significant increase in surface area on surfaces with structures in excess of 10 nm as well as an overall decrease in stability resulting from increasing pore size and curvature. Comparison of the liposomal and detergent-mediated introduction of purified bacteriorhodopsin (bR) and the human type 3 serotonin receptor (5HT3R) are investigated focusing on the resulting protein function, diffusion, orientation, and incorporation efficiency. In both cases, functional proteins are observed; however, the reconstitution efficiency and orientation selectivity are significantly enhanced through detergent-mediated protein reconstitution. The results of these experiments provide a basis for bulk ionic and fluorescent dye-based compartmentalization assays as well as single-molecule optical and single-channel electrochemical interrogation of transmembrane proteins in a biomimetic platform.

  2. Importance of phospholipid bilayer integrity in the analysis of proteinlipid interactions

    SciTech Connect (OSTI)

    Drcker, Patrick; Gerke, Volker; Galla, Hans-Joachim

    2014-10-10

    Highlights: We show long-term mechanical stabilization of solid supported bilayers. Bilayer integrity is essential for the investigation of proteinlipid interactions. Protein adsorption to a bilayer containing defects causes membrane destruction. - Abstract: The integrity of supported phospholipid bilayer membranes is of crucial importance for the investigation of lipidprotein interactions. Therefore we recorded the formation of supported membranes on SiO{sub 2} and mica by quartz crystal microbalance and controlled the integrity by atomic force microscopy. This study aims to analyze how membrane defects affect proteinlipid interactions. The experiments focused on a lipid mixture of POPC/DOPC/Chol/POPS/PI(4,5)P{sub 2} (37:20:20:20:3) and the binding of the peripheral membrane associated protein annexin A2. We found that formation of a continuous undisturbed bilayer is an indispensable precondition for a reliable determination and quantification of lipidprotein-interactions. If membrane defects were present, protein adsorption causes membrane disruption and lipid detachment on a support thus leading to false determination of binding constants. Our results obtained for PI(4,5)P{sub 2} and cholesterol containing supported membranes yield new knowledge to construct functional surfaces that may cover nanoporous substrates, form free standing membranes or may be used for lab-on-a-chip applications.

  3. Nodal bilayer-splitting controlled by spin-orbit interactions in underdoped high-Tc cuprates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Harrison, N.; Ramshaw, B. J.; Shekhter, A.

    2015-06-03

    The highest superconducting transition temperatures in the cuprates are achieved in bilayer and trilayer systems, highlighting the importance of interlayer interactions for high Tc. It has been argued that interlayer hybridization vanishes along the nodal directions by way of a specific pattern of orbital overlap. Recent quantum oscillation measurements in bilayer cuprates have provided evidence for a residual bilayer-splitting at the nodes that is sufficiently small to enable magnetic breakdown tunneling at the nodes. Here we show that several key features of the experimental data can be understood in terms of weak spin-orbit interactions naturally present in bilayer systems, whosemore » primary effect is to cause the magnetic breakdown to be accompanied by a spin flip. These features can now be understood to include the equidistant set of three quantum oscillation frequencies, the asymmetry of the quantum oscillation amplitudes in c-axis transport compared to ab-plane transport, and the anomalous magnetic field angle dependence of the amplitude of the side frequencies suggestive of small effective g-factors. We suggest that spin-orbit interactions in bilayer systems can further affect the structure of the nodal quasiparticle spectrum in the superconducting phase. PACS numbers: 71.45.Lr, 71.20.Ps, 71.18.+y« less

  4. Transfer matrix theory of monolayer graphene/bilayer graphene heterostructure superlattice

    SciTech Connect (OSTI)

    Wang, Yu

    2014-10-28

    We have formulated a transfer matrix method to investigate electronic properties of graphene heterostructure consisting of monolayer graphene and bilayer counterpart. By evaluating transmission, conductance, and band dispersion, we show that, irrespective of the different carrier chiralities in monolayer graphene and bilayer graphene, superlattice consisting of biased bilayer graphene barrier and monolayer graphene well can mimic the electronic properties of conventional semiconductor superlattice, displaying the extended subbands in the quantum tunneling regime and producing anisotropic minigaps for the classically allowed transport. Due to the lateral confinement, the lowest mode has shifted away from the charge neutral point of monolayer graphene component, opening a sizeable gap in concerned structure. Following the gate-field and geometry modulation, all electronic states and gaps between them can be externally engineered in an electric-controllable strategy.

  5. Vapor deposition of water on graphitic surfaces: Formation of amorphous ice, bilayer ice, ice I, and liquid water

    SciTech Connect (OSTI)

    Lupi, Laura; Kastelowitz, Noah; Molinero, Valeria

    2014-11-14

    Carbonaceous surfaces are a major source of atmospheric particles and could play an important role in the formation of ice. Here we investigate through molecular simulations the stability, metastability, and molecular pathways of deposition of amorphous ice, bilayer ice, and ice I from water vapor on graphitic and atomless Lennard-Jones surfaces as a function of temperature. We find that bilayer ice is the most stable ice polymorph for small cluster sizes, nevertheless it can grow metastable well above its region of thermodynamic stability. In agreement with experiments, the simulations predict that on increasing temperature the outcome of water deposition is amorphous ice, bilayer ice, ice I, and liquid water. The deposition nucleation of bilayer ice and ice I is preceded by the formation of small liquid clusters, which have two wetting states: bilayer pancake-like (wetting) at small cluster size and droplet-like (non-wetting) at larger cluster size. The wetting state of liquid clusters determines which ice polymorph is nucleated: bilayer ice nucleates from wetting bilayer liquid clusters and ice I from non-wetting liquid clusters. The maximum temperature for nucleation of bilayer ice on flat surfaces, T{sub B}{sup max} is given by the maximum temperature for which liquid water clusters reach the equilibrium melting line of bilayer ice as wetting bilayer clusters. Increasing water-surface attraction stabilizes the pancake-like wetting state of liquid clusters leading to larger T{sub B}{sup max} for the flat non-hydrogen bonding surfaces of this study. The findings of this study should be of relevance for the understanding of ice formation by deposition mode on carbonaceous atmospheric particles, including soot.

  6. Nanocrystal doped matrixes

    DOE Patents [OSTI]

    Parce, J. Wallace; Bernatis, Paul; Dubrow, Robert; Freeman, William P.; Gamoras, Joel; Kan, Shihai; Meisel, Andreas; Qian, Baixin; Whiteford, Jeffery A.; Ziebarth, Jonathan

    2010-01-12

    Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

  7. Growth of Single- and Bilayer ZnO on Au(111) and Interaction with Copper

    SciTech Connect (OSTI)

    Deng, Xingyi; Yao, Kun; Sun, Keju; Li, Wei-Xue; Lee, Junseok; Matranga, Christopher

    2013-05-30

    The stoichiometric single- and bi-layer ZnO(0001) have been prepared by reactive deposition of Zn on Au(111) and studied in detail with X-ray photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory calculations. Both single- and bi-layer ZnO(0001) adopt a planar, graphite-like structure similar to freestanding ZnO(0001) due to the weak van der Waals interactions dominating their adhesion with the Au(111) substrate. At higher temperature, the single-layer ZnO(0001) converts gradually to bi-layer ZnO(0001) due to the twice stronger interaction between two ZnO layers than the interfacial adhesion of ZnO with Au substrate. It is found that Cu atoms on the surface of bi-layer ZnO(0001) are mobile with a diffusion barrier of 0.31 eV, and likely to agglomerate and form nanosized particles at low coverages; while Cu atoms tend to penetrate a single layer of ZnO(0001) with a barrier of 0.10 eV, resulting in a Cu free surface.

  8. Fluid Phase Lipid Areas and Bilayer Thicknesses of Commonly Used Phosphatidylcholines as a Function of Temperature

    SciTech Connect (OSTI)

    Kucerka, Norbert; Nieh, Mu-Ping; Katsaras, John

    2011-01-01

    The structural parameters of fluid phase bilayers composed of phosphatidylcholines with fully saturated, mixed, and branched fatty acid chains, at several temperatures, have been determined by simultaneously analyzing small-angle neutron and X-ray scattering data. Bilayer parameters, such as area per lipid and overall bilayer thickness have been obtained in conjunction with intrabilayer structural parameters (e.g. hydrocarbon region thickness). The results have allowed us to assess the effect of temperature and hydrocarbon chain composition on bilayer structure. For example, we found that for all lipids there is, not surprisingly, an increase in fatty acid chain trans-gauche isomerization with increasing temperature. Moreover, this increase in trans-gauche isomerization scales with fatty acid chain length in mixed chain lipids. However, in the case of lipids with saturated fatty acid chains, trans-gauche isomerization is increasingly tempered by attractive chain-chain van der Waals interactions with increasing chain length. Finally, our results confirm a strong dependence of lipid chain dynamics as a function of double bond position along fatty acid chains.

  9. Control of membrane permeability in air-stable droplet interface bilayers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mruetusatorn, Prachya; Polizos, Georgios; Datskos, Panos G; Taylor, Graham; Sarles, Stephen A; Boreyko, Jonathan; Hayes, Douglas G; Collier, Pat

    2015-01-01

    Air-stable droplet interface bilayers (airDIBs) on oil-infused surfaces are versatile model membranes for synthetic biology applications, including biosensing of airborne species. However, air-DIBs are subject to evaporation, which can, over time, destabilize them and reduce their useful lifetime compared to traditional DIBs that are fully submerged in oil. Here, we show that lifetimes of air-DIBs can be extended by as much as an order of magnitude by maintaining them at a temperature just above the dew point. We find that raising the temperature from near the dew point (7 C at 38.5 % relative humidity) to room temperature results inmore » loss of water molecules of hydration from the polar head groups of the lipid bilayer membrane due to evaporation in an irreversible process that increases the overall entropy of the system. This dehydration transition affects primarily the bilayer resistance, by increasing ion permeability through the increasingly disordered polar head group region of the bilayer. Temperature and/or relative humidity are conveniently tunable parameters for controlling the stability and composition of air-DIBs membranes, while still allowing for operation in ambient environments.« less

  10. Atomic Force Microscopy Studies of Lipophosphoglycan (LPG) Molecules in Lipid Bilayers

    SciTech Connect (OSTI)

    LAST, JULIE A.; HUBER, TINA; SASAKI, DARRYL Y.; SALVATORE, BRIAN; TURCO, SALVATORE J.

    2003-03-01

    Lipophosphoglycan (LPG) is a lypopolysaccharide found on the surface of the parasite Leishmania donovani that is thought to play an essential role in the infection of humans with leishamniasis. LPG acts as an adhesion point for the parasite to the gut of the sand fly, whose bite is responsible for transmitting the disease. In addition, LPG acts to inhibit protein kinase C (PKC) in the human macrophage, possibly by structural changes in the membrane. The Ca{sup 2+} ion is believed to play a role in the infection cycle, acting both as a crosslinker between LPG molecules and by playing a part in modulating PKC activity. To gain insight into the structure of LPG within a supported lipid membrane and into the structural changes that occur due to Ca{sup 2+} ions, we have employed the atomic force microscope (AFM). We have observed that the LPG molecules inhibit bilayer fusion, resulting in bilayer islands on the mica surface. One experiment suggests that the LPG molecules are parallel to the mica surface and that the structure of the LPG changes upon addition of Ca{sup 2+}, with an increase in the height of the LPG molecules from the bilayer surface and an almost complete coverage of LPG on the bilayer island.

  11. Investigation of the effect of bilayer membrane structures and fluctuation amplitudes on SANS/SAXS profile for short membrane wavelength

    SciTech Connect (OSTI)

    Lee, Victor; Hawa, Takumi

    2013-09-28

    The effect of bilayer membrane structures and fluctuation amplitudes on small angle neutron scattering (SANS) and small angle X-ray scattering (SAXS) profile is investigated based on harmonic motions of the surfactant bilayers with bending as well as thickness fluctuation motions. In this study we consider the case in which the wavelength of the bilayer membrane is shorter than the thickness of the membrane. We find that the thickness of the surfactant bilayer membrane, d{sub m}, affects both q{sub dip} and q{sub peak} of I(q,0) profile, and that the fluctuation amplitude, a, of the membrane changes the peak of I(q,0). A simple formula is derived to estimate the thickness of the bilayer based on the q{sub dip} of the profile obtained from the simulation. The resulting estimates of the thickness of the bilayer with harmonic motion showed accuracy within 1%. Moreover, the bilayer thicknesses estimated from the proposed formula show an excellent agreement with the SANS and SAXS experimental results available in the literatures. We also propose a curve fit model, which describes the relationship between the fluctuation amplitude and the normalized q{sub peak} ratio. The present results show the feasibility of the simple formula to estimate the fluctuation amplitude based on the SANS and SAXS profiles.

  12. Micro-patterning of ionic reservoirs within a double bilayer lipid membrane to fabricate a 2D array of ion-channel switch based electrochemical biosensors

    SciTech Connect (OSTI)

    Sansinena, J. M.; Yee, C. K.; Sapuri, A.; Swanson, Basil I.; Redondo, A.; Parikh, A. N.

    2004-01-01

    We present a simple approach for the design of ionic reservoir arrays within a double phospholipid bilayer to ultimately develop a 2D array of ion-channel switch based electrochemical biosensors. As a first step, a primary bilayer lipid membrane is deposited onto an array of electrodes patterned onto a substrate surface. Subsequently, an array of microvoids is created within the bilayer by a wet photolithographic patterning of phospholipid bilayers using a deep UV light source and a quartz/chrome photomask. To ensure registry, the photomask used to pattern bilayers is designed to match up the microvoids within the primary bilayer with the array of electrodes on the substrate surface. The deposition of a secondary bilayer lipid membrane onto the primary bilayer that spans across the patterned microvoids leads to the formation of the array of ionic reservoirs within the double phospholipid bilayer. This is accomplished using giant unilamellar vesicles and by exploiting membrane electrostatics. The use of ion-channels incorporated into the secondary bilayer that covers the individual ionic reservoirs allows the construction of a 2D array of ion-channel switch based electrochemical biosensors that are able to recognize different target-agents simultaneously.

  13. Boron doping a semiconductor particle

    DOE Patents [OSTI]

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  14. Boron doping a semiconductor particle

    DOE Patents [OSTI]

    Stevens, G.D.; Reynolds, J.S.; Brown, L.K.

    1998-06-09

    A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.

  15. The effect of spin-orbit coupling in band structure and edge states of bilayer graphene

    SciTech Connect (OSTI)

    Sahdan, Muhammad Fauzi; Darma, Yudi

    2015-04-16

    Topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of bilayer grapheme and also its edge states by using this model with analytical approach. The results of our calculation show that the gap opening occurs at K and K’ point in bilayer graphene.In addition, a pair of gapless edge modes occurs both in the zigzag and arm-chair configurations are no longer exist. There are gap created at the edge even though thery are very small.

  16. Theoretical study of electronic transport properties of a graphene-silicene bilayer

    SciTech Connect (OSTI)

    Berdiyorov, G. R.; Bahlouli, H.; Peeters, F. M.

    2015-06-14

    Electronic transport properties of a graphene-silicene bilayer system are studied using density-functional theory in combination with the nonequilibrium Green's function formalism. Depending on the energy of the electrons, the transmission can be larger in this system as compared to the sum of the transmissions of separated graphene and silicene monolayers. This effect is related to the increased electron density of states in the bilayer sample. At some energies, the electronic states become localized in one of the layers, resulting in the suppression of the electron transmission. The effect of an applied voltage on the transmission becomes more pronounced in the layered sample as compared to graphene due to the larger variation of the electrostatic potential profile. Our findings will be useful when creating hybrid nanoscale devices where enhanced transport properties will be desirable.

  17. Electron dynamics of the buffer layer and bilayer graphene on SiC

    SciTech Connect (OSTI)

    Shearer, Alex J.; Caplins, Benjamin W.; Suich, David E.; Harris, Charles B., E-mail: cbharris@berkeley.edu [Department of Chemistry, University of California at Berkeley, Berkeley, California 94720 (United States); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Johns, James E. [Department of Chemistry, University of Minnesota Twin Cities, Minneapolis, Minnesota 55455 (United States); Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-06-09

    Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n?=?2, and n?=?3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n?=?2 the n?=?3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons.

  18. Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers

    SciTech Connect (OSTI)

    Gong, Zhirui; Liu, G. B.; Yu, Hongyi; Xiao, Di; Cui, Xiaodong; Xu, Xiaodong; Yao, Wang

    2013-01-01

    In monolayer group-VI transition metal dichalcogenides, charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with electrical polarization. Here we show that transition metal dichalcogenide bilayers offer an unprecedented platform to realize a strong coupling between the spin, valley and layer pseudospin of holes. Such coupling gives rise to the spin Hall effect and spin-dependent selection rule for optical transitions in inversion symmetric bilayer and leads to a variety of magnetoelectric effects permitting quantum manipulation of these electronic degrees of freedom. Oscillating electric and magnetic fields can both drive the hole spin resonance where the two fields have valley-dependent interference, making an interplay between the spin and valley as information carriers possible for potential valley-spintronic applications. We show how to realize quantum gates on the spin qubit controlled by the valley bit.

  19. Highly efficient terahertz wave modulators by photo-excitation of organics/silicon bilayers

    SciTech Connect (OSTI)

    Yoo, Hyung Keun; Kang, Chul; Hwang, In-Wook; Yoon, Youngwoon; Lee, Kiejin; Kee, Chul-Sik; Lee, Joong Wook

    2014-07-07

    Using hybrid bilayer systems comprising a molecular organic semiconductor and silicon, we achieve optically controllable active terahertz (THz) modulators that exhibit extremely high modulation efficiencies. A modulation efficiency of 98% is achieved from thermally annealed C{sub 60}/silicon bilayers, due to the rapid photo-induced electron transfer from the excited states of the silicon onto the C{sub 60} layer. Furthermore, we demonstrate the broadband modulation of THz waves. The cut-off condition of the system that is determined by the formation of efficient charge separation by the photo-excitation is highly variable, changing the system from insulating to metallic. The phenomenon enables an extremely high modulation bandwidth and rates of electromagnetic waves of interest. The realization of near-perfect modulation efficiency in THz frequencies opens up the possibilities of utilizing active modulators for THz spectroscopy and communications.

  20. Method of doping a semiconductor

    DOE Patents [OSTI]

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  1. X-ray small-angle scattering from sputtered CeO{sub 2}/C bilayers

    SciTech Connect (OSTI)

    Haviar, S.; Dubau, M.; Khalakhan, I.; Vorokhta, M.; Matolinova, I.; Matolin, V.; Vales, V.; Endres, J.; Holy, V.; Buljan, M.; Bernstorff, S.

    2013-01-14

    Surface and interface morphology of cerium oxide/carbon bilayers used as thin-film catalysts is studied by grazing-incidence small-angle x-ray scattering, scanning electron microscopy, and atomic-force microscopy, and the dependence of the structural parameters on the thicknesses of the constituting layers is investigated. The applicability of x-ray scattering and its advantages over standard analytical methods are discussed.

  2. Phase diagram of the CF{sub 4} monolayer and bilayer on graphite

    SciTech Connect (OSTI)

    Thomas, Petros; Hess, George B.

    2014-05-21

    We report an experimental study of physisorbed monolayers and bilayers of CF{sub 4} on graphite using infrared reflection absorption spectroscopy supplemented by ellipsometry. The symmetric CF stretch mode ?{sub 3} near 1283 cm{sup ?1} in the gas is strongly blue shifted in the film by dynamic dipole coupling. This blue shift provides a very sensitive measure of the inter-molecular spacing in the monolayer and, less directly, in the bilayer. We find that important corrections are necessary to the volumetric coverage scales used in previous heat capacity and x-ray diffraction studies of this system. This requires quantitative and some qualitative changes to the previously proposed phase diagram. We find evidence for a new phase transition in the middle of the hexagonal incommensurate region and construct new phase diagrams in both the variables coverage-temperature and chemical potential-temperature. We determine the compressibility and thermal expansion in the low-pressure hexagonal incommensurate phase and values for the entropy change in several phase transitions. Below about 55 K there is evidence of solution of up to 7% of an impurity, most likely CO, in our monolayer but not the bilayer film.

  3. Interplay between intrinsic and stacking-fault magnetic domains in bi-layered manganites

    SciTech Connect (OSTI)

    Hossain, M.A; Burkhardt, Mark H.; Sarkar, S.; Ohldag, H.; Chuang, Y.-D.; Scholl, A.; Young, A.T.; Doran, A.; Dessau, D.S.; Zheng, H.; Mitchell, J.F.; Durr, H.A.; Stohr, J.

    2012-09-11

    We present a low temperature X-ray photoemission electron microscopy study of the bi-layered manganite compound La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7} (BL-LSMO) to investigate the influence of stacking faults, which are structurally and magnetically different from the bi-layered host. In BL-LSMO small magnetic moment persists to T* = 300K, well above the Curie temperature of 120K (T{sub C}). Our magnetic images show that 3D stacking faults are responsible for the T* transition. Furthermore, close to the T{sub C}, stacking faults are well coupled to the bi-layered host with latter magnetic domains controlling the spin direction of the stacking faults. Contrary to recent reports, we find that stacking faults do not seed magnetic domains in the host via an exchange spring mechanism and the intrinsic T{sub C} of the BL-LSMO is not lower than 120K.

  4. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

    SciTech Connect (OSTI)

    Oleson, Timothy A.; Sahai, Nita; Wesolowski, David J; Dura, Joseph A; Majkrzak, Charles F; Giuffre, Anthony J.

    2012-01-01

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

  5. Method of doping organic semiconductors

    DOE Patents [OSTI]

    Kloc, Christian Leo; Ramirez, Arthur Penn; So, Woo-Young

    2012-02-28

    A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.

  6. Metal-doped organic foam

    DOE Patents [OSTI]

    Rinde, James A.

    1982-01-01

    Organic foams having a low density and very small cell size and method for producing same in either a metal-loaded or unloaded (nonmetal loaded) form are described. Metal-doped foams are produced by soaking a polymer gel in an aqueous solution of desired metal salt, soaking the gel successively in a solvent series of decreasing polarity to remove water from the gel and replace it with a solvent of lower polarity with each successive solvent in the series being miscible with the solvents on each side and being saturated with the desired metal salt, and removing the last of the solvents from the gel to produce the desired metal-doped foam having desired density cell size, and metal loading. The unloaded or metal-doped foams can be utilized in a variety of applications requiring low density, small cell size foam. For example, rubidium-doped foam made in accordance with the invention has utility in special applications, such as in x-ray lasers.

  7. Phosphorous doping a semiconductor particle

    DOE Patents [OSTI]

    Stevens, Gary Don; Reynolds, Jeffrey Scott

    1999-07-20

    A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

  8. Phosphorus doping a semiconductor particle

    DOE Patents [OSTI]

    Stevens, G.D.; Reynolds, J.S.

    1999-07-20

    A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

  9. Degenerate doping of metallic anodes

    SciTech Connect (OSTI)

    Friesen, Cody A; Zeller, Robert A; Johnson, Paul B; Switzer, Elise E

    2015-05-12

    Embodiments of the invention relate to an electrochemical cell comprising: (i) a fuel electrode comprising a metal fuel, (ii) a positive electrode, (iii) an ionically conductive medium, and (iv) a dopant; the electrodes being operable in a discharge mode wherein the metal fuel is oxidized at the fuel electrode and the dopant increases the conductivity of the metal fuel oxidation product. In an embodiment, the oxidation product comprises an oxide of the metal fuel which is doped degenerately. In an embodiment, the positive electrode is an air electrode that absorbs gaseous oxygen, wherein during discharge mode, oxygen is reduced at the air electrode. Embodiments of the invention also relate to methods of producing an electrode comprising a metal and a doped metal oxidation product.

  10. Modelling of noble anaesthetic gases and high hydrostatic pressure effects in lipid bilayers

    SciTech Connect (OSTI)

    Moskovitz, Yevgeny; Yang, Hui

    2015-01-08

    Our objective was to study molecular processes that might be responsible for inert gas narcosis and high-pressure nervous syndrome. The classical molecular dynamics trajectories (200 ns-long) of dioleoylphosphatidylcholine (DOPC) bilayers simulated by the Berger force field were evaluated for water and the atomic distribution of noble gases around DOPC molecules at a pressure range of 1 - 1000 bar and temperature of 310 Kelvin. Xenon and argon have been tested as model gases for general anesthetics, and neon has been investigated for distortions that are potentially responsible for neurological tremor at hyperbaric conditions. The analysis of stacked radial pair distribution functions of DOPC headgroup atoms revealed the explicit solvation potential of gas molecules, which correlates with their dimensions. The orientational dynamics of water molecules at the biomolecular interface should be considered as an influential factor; while excessive solvation effects appearing in the lumen of membrane-embedded ion channels could be a possible cause of inert gas narcosis. All the noble gases tested exhibit similar patterns of the order parameter for both DOPC acyl chains, which is opposite to the patterns found for the order parameter curve at high hydrostatic pressures in intact bilayers. This finding supports the critical volume hypothesis of anesthesia pressure reversal. The irregular lipid headgroup-water boundary observed in DOPC bilayers saturated with neon in the pressure range of 1 - 100 bar could be associated with the possible manifestation of neurological tremor at the atomic scale. The non-immobilizer neon also demonstrated the highest momentum impact on the normal component of the DOPC diffusion coefficient representing monolayers undulations rate, which indicates enhanced diffusivity, rather than atom size, as the key factor.

  11. Modelling of noble anaesthetic gases and high hydrostatic pressure effects in lipid bilayers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Moskovitz, Yevgeny; Yang, Hui

    2015-01-08

    Our objective was to study molecular processes that might be responsible for inert gas narcosis and high-pressure nervous syndrome. The classical molecular dynamics trajectories (200 ns-long) of dioleoylphosphatidylcholine (DOPC) bilayers simulated by the Berger force field were evaluated for water and the atomic distribution of noble gases around DOPC molecules at a pressure range of 1 - 1000 bar and temperature of 310 Kelvin. Xenon and argon have been tested as model gases for general anesthetics, and neon has been investigated for distortions that are potentially responsible for neurological tremor at hyperbaric conditions. The analysis of stacked radial pair distributionmore » functions of DOPC headgroup atoms revealed the explicit solvation potential of gas molecules, which correlates with their dimensions. The orientational dynamics of water molecules at the biomolecular interface should be considered as an influential factor; while excessive solvation effects appearing in the lumen of membrane-embedded ion channels could be a possible cause of inert gas narcosis. All the noble gases tested exhibit similar patterns of the order parameter for both DOPC acyl chains, which is opposite to the patterns found for the order parameter curve at high hydrostatic pressures in intact bilayers. This finding supports the ‘critical volume’ hypothesis of anesthesia pressure reversal. The irregular lipid headgroup-water boundary observed in DOPC bilayers saturated with neon in the pressure range of 1 - 100 bar could be associated with the possible manifestation of neurological tremor at the atomic scale. The non-immobilizer neon also demonstrated the highest momentum impact on the normal component of the DOPC diffusion coefficient representing monolayers undulations rate, which indicates enhanced diffusivity, rather than atom size, as the key factor.« less

  12. Valley filter from magneto-tunneling between single and bi-layer graphene

    SciTech Connect (OSTI)

    Pratley, L.; Zülicke, U.

    2014-02-24

    We consider tunneling transport between two parallel graphene sheets; where one is a single-layer sample and the other one a bi-layer. In the presence of an in-plane magnetic field, the interplay between combined energy and momentum conservation in a tunneling event and the distinctive chiral nature of charge carriers in the two systems turns out to favor tunneling of electrons from one of the two valleys in the graphene Brillouin zone. Adjusting the field strength enables manipulation of the valley polarization of the current, which reaches its maximum value of 100% concomitantly with a maximum of the tunneling conductance.

  13. Electronic properties of bilayer graphenes strongly coupled to interlayer stacking and an external field

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Park, Changwon; Ryou, Junga; Hong, Suklyun; Sumpter, Bobby G.; Kim, Gunn; Yoon, Mina

    2015-07-02

    Bilayer graphene (BLG) with a tunable band gap appears interesting as an alternative to graphene for practical applications; thus, its transport properties are being actively pursued. Using density functional theory and perturbation analysis, we investigated, under an external electric field, the electronic properties of BLG in various stackings relevant to recently observed complex structures. We established the first phase diagram summarizing the stacking-dependent gap openings of BLG for a given field. Lastly, we further identified high-density midgap states, localized on grain boundaries, even under a strong field, which can considerably reduce the overall transport gap.

  14. High transition temperature superconductor/insulator bilayers for the development of ultra-fast electronics

    SciTech Connect (OSTI)

    Sirena, M.; Flix, L. Avils; Instituto Balseiro, Universidad Nacional de Cuyo and CNEA, 8400 Bariloche ; Haberkorn, N.

    2013-07-29

    High transition temperature superconductor (HTc)/SrTiO{sub 3} (STO) bilayers were fabricated by sputtering deposition on (100) STO substrates. Their transport and morphological properties were characterized using conductive atomic force microscopy. The STO barriers present good insulating properties, with long attenuation lengths (? ? 1 nm) which reduce the junction resistance and increase the operating critical current. The samples present roughness values smaller than 1 nm, with an extremely low density of surface defects (?5 10{sup ?5} defects/?m{sup 2}). The high control of the barrier quality over large defect free surfaces is encouraging for the development of microelectronics devices based in HTc Josephson junctions.

  15. Lanthanide doped strontium barium mixed halide scintillators

    DOE Patents [OSTI]

    Gundiah, Gautam; Bizarri, Gregory; Hanrahan, Stephen M; Bourret-Courchesne, Edith; Derenzo, Stephen E

    2013-07-16

    The present invention provides for a composition comprising an inorganic scintillator comprising a lanthanide-doped strontium barium mixed halide useful for detecting nuclear material.

  16. Lanthanide doped barium phosphorous oxide scintillators

    DOE Patents [OSTI]

    Borade, Ramesh B; Bourret-Courchesne, Edith; Denzo, Stephen E

    2013-02-26

    The present invention provides for a composition comprising an inorganic scintillator comprising a lanthanide-doped barium phosphorous oxide useful for detecting nuclear material.

  17. Electrochromic Nickel Oxide Simultaneously Doped with Lithium...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electrochromic Nickel Oxide Simultaneously Doped with Lithium and a Metal Dopant National ... quantity of charge balancing lithium ions per unit area, which may be ...

  18. ELECTROCHROMIC NICKEL OXIDE SIMULTANEOUSLY DOPED WITH LITHIUM...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    News Events Return to Search ELECTROCHROMIC NICKEL OXIDE SIMULTANEOUSLY DOPED WITH LITHIUM AND A METAL DOPANT United States Patent Application *** PATENT GRANTED ***...

  19. Acid Doped Membranes for High Temperature PEMFC

    Broader source: Energy.gov [DOE]

    Presentation on Acid Doped Membranes for High Temperature PEMFC to the High Temperature Membrane Working Group, May 25, 2004 in Philadelphia, PA.

  20. Lanthanide doped strontium barium mixed halide scintillators

    DOE Patents [OSTI]

    Gundiah, Gautam; Bizarri, Gregory A.; Hanrahan, Stephen M.; Bourret-Courchesne, Edith D.; Derenzo, Stephen E.

    2016-03-15

    The present invention provides for a composition comprising an inorganic scintillator comprising a lanthanide-doped strontium barium mixed halide useful for detecting nuclear material.

  1. Spectroscopic signatures of AA' and AB stacking of chemical vapor deposited bilayer MoS2

    SciTech Connect (OSTI)

    Xia, Ming; Li, Bo; Yin, Kuibo; Capellini, Giovanni; Niu, Gang; Gong, Yongji; Zhou, Wu; Ajayan, Pulickel M.; Xie, Ya -Hong

    2015-11-04

    We discuss prominent resonance Raman and photoluminescence spectroscopic differences between AA'and AB stacked bilayer molybdenum disulfide (MoS2) grown by chemical vapor deposition are reported. Bilayer MoS2 islands consisting of the two stacking orders were obtained under identical growth conditions. Also, resonance Raman and photoluminescence spectra of AA' and AB stacked bilayer MoS2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom.

  2. Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

    SciTech Connect (OSTI)

    Yu, Cui; Liu, Qingbin; Li, Jia; Lu, Weili; He, Zezhao; Cai, Shujun; Feng, Zhihong

    2014-11-03

    We investigate the temperature dependent electrical transport properties of quasi-free standing bilayer graphene on 4H-SiC (0001) substrate. Three groups of monolayer epitaxial graphene and corresponding quasi-free standing bilayer graphene with different crystal quality and layer number homogeneity are prepared. Raman spectroscopy and atomic-force microscopy are used to obtain their morphologies and layer number, and verify the complete translation of buffer layer into graphene. The highest room temperature mobility reaches 3700 cm{sup 2}/V·s for the quasi-free standing graphene. The scattering mechanism analysis shows that poor crystal quality and layer number inhomogeneity introduce stronger interacting of SiC substrate to the graphene layer and more impurities, which limit the carrier mobility of the quasi-free standing bilayer graphene samples.

  3. Nitrogen-Doped Mesoporous Carbon Promoted Chemical Adsorption...

    Office of Scientific and Technical Information (OSTI)

    Nitrogen-Doped Mesoporous Carbon Promoted Chemical Adsorption of Sulfur and Fabrication of ... Title: Nitrogen-Doped Mesoporous Carbon Promoted Chemical Adsorption of Sulfur and ...

  4. Performance and mix measurements of indirect drive Cu doped Be...

    Office of Scientific and Technical Information (OSTI)

    Performance and mix measurements of indirect drive Cu doped Be implosions Citation Details In-Document Search Title: Performance and mix measurements of indirect drive Cu doped Be ...

  5. Time-reversal-invariant topological superconductivity in n -doped...

    Office of Scientific and Technical Information (OSTI)

    Time-reversal-invariant topological superconductivity in n -doped BiH Citation Details In-Document Search Title: Time-reversal-invariant topological superconductivity in n -doped ...

  6. Intrinsic charge and spin conductivities of doped graphene in...

    Office of Scientific and Technical Information (OSTI)

    Intrinsic charge and spin conductivities of doped graphene in the Fermi-liquid regime ... Title: Intrinsic charge and spin conductivities of doped graphene in the Fermi-liquid ...

  7. Vertical GaN power diodes with a bilayer edge termination

    SciTech Connect (OSTI)

    Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.; Fischer, Arthur J.; King, Michael P.; Moseley, Michael W.; Armstrong, Andrew M.; Kaplar, Robert J.; Kizilyalli, Isik C.; Aktas, Ozgur; Wierer, Jr., Jonathan J.

    2015-12-07

    Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type drift region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.

  8. Vertical GaN power diodes with a bilayer edge termination

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.; Fischer, Arthur J.; King, Michael P.; Moseley, Michael W.; Armstrong, Andrew M.; Kaplar, Robert J.; Kizilyalli, Isik C.; Aktas, Ozgur; et al

    2015-12-07

    Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type driftmore » region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.« less

  9. Ultratough single crystal boron-doped diamond

    DOE Patents [OSTI]

    Hemley, Russell J [Carnegie Inst. for Science, Washington, DC ; Mao, Ho-Kwang [Carnegie Inst. for Science, Washington, DC ; Yan, Chih-Shiue [Carnegie Inst. for Science, Washington, DC ; Liang, Qi [Carnegie Inst. for Science, Washington, DC

    2015-05-05

    The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

  10. Does water dope carbon nanotubes?

    SciTech Connect (OSTI)

    Bell, Robert A.; Payne, Michael C.; Mostofi, Arash A.

    2014-10-28

    We calculate the long-range perturbation to the electronic charge density of carbon nanotubes (CNTs) as a result of the physisorption of a water molecule. We find that the dominant effect is a charge redistribution in the CNT due to polarisation caused by the dipole moment of the water molecule. The charge redistribution is found to occur over a length-scale greater than 30 , highlighting the need for large-scale simulations. By comparing our fully first-principles calculations to ones in which the perturbation due to a water molecule is treated using a classical electrostatic model, we estimate that the charge transfer between CNT and water is negligible (no more than 10{sup ?4}?e per water molecule). We therefore conclude that water does not significantly dope CNTs, a conclusion that is consistent with the poor alignment of the relevant energy levels of the water molecule and CNT. Previous calculations that suggest water n-dopes CNTs are likely due to the misinterpretation of Mulliken charge partitioning in small supercells.

  11. Effect of Ru thickness on spin pumping in Ru/Py bilayer

    SciTech Connect (OSTI)

    Behera, Nilamani; Singh, M. Sanjoy; Chaudhary, Sujeet; Pandya, Dinesh K. Muduli, P. K.

    2015-05-07

    We report the effect of Ru thickness (t{sub Ru}) on ferromagnetic resonance (FMR) line-width of Ru(t{sub Ru})/Py(23?nm) bilayer samples grown on Si(100)/SiO{sub 2} substrates at room temperature by magnetron sputtering. The FMR line-width is found to vary linearly with frequency for all thicknesses of Ru, indicating intrinsic origin of damping. For Ru thicknesses below 15?nm, Gilbert-damping parameter, ? is almost constant. We ascribe this behavior to spin back flow that is operative for Ru thicknesses lower than the spin diffusion length in Ru, ?{sub sd}. For thicknesses >15?nm (>?{sub sd}), the damping constant increases with Ru thickness, indicating spin pumping from Py into Ru.

  12. Spin valve effect of the interfacial spin accumulation in yttrium iron garnet/platinum bilayers

    SciTech Connect (OSTI)

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu Tang, Xiaoli; Bai, Feiming; Zhong, Zhiyong; Fan, Xin; Xiao, John Q.

    2014-09-29

    We report the spin valve effect in yttrium iron garnet/platinum (YIG/Pt) bilayers. The spin Hall effect (SHE) generates spin accumulation at the YIG/Pt interface and can be opened/closed by magnetization switching in the electrical insulator YIG. The interfacial spin accumulation was measured in both YIG/Pt and YIG/Cu/Pt structures using a planar Hall configuration. The spin valve effect remained, even after a 2 nm thick Cu layer was inserted between the YIG and Pt layers, which aimed to exclude the induced magnetization at the YIG/Pt interface. The transverse Hall voltage and switching field were dependent on the applied charge current density. The origin of this behavior can be explained by the SHE induced torque exerted on the domain wall, caused by the transfer of the spin angular momentum from the spin-polarized current to the YIG magnetic moment.

  13. Nitrogen doping study in ingot niobium cavities

    SciTech Connect (OSTI)

    Dhakal, Pashupati; Ciovati, Gianluigi; Kneisel, Peter; Myneni, Ganapati Rao; Makita, Junki

    2015-09-01

    Thermal diffusion of nitrogen in niobium superconducting radio frequency cavities at temperature ~800 C has resulted in the increase in quality factor with a low-field Q-rise extending to Bp > 90 mT. However, the maximum accelerating gradient of these doped cavities often deteriorates below the values achieved by standard treatments prior to doping. Here, we present the results of the measurements on ingot niobium cavities doped with nitrogen at 800 C. The rf measurements were carried out after the successive electropolishing to remove small amount of material from the inner surface layer. The result showed higher breakdown field with lower quality factor as material removal increases.

  14. Electrochromic nickel oxide simultaneously doped with lithium...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    More Like This Return to Search Electrochromic nickel oxide simultaneously doped with lithium and a metal dopant United States Patent Patent Number: 8,687,261 Issued: April 1,...

  15. Eribium Doped Y2O3

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Effect of Local Coordination on the Photoluminescence Properties of Er-doped Y2O3 Thin Films Miniaturizing the erbium-doped optical fiber amplifier (~20 m in length) into a small, compact amplifier that can be integrated with other optical and electronic devices on a single chip (optoelectronics) offers great promise in optical communication as an alternative to the electronic technology.1,2, The gain of these miniaturized devices is limited by the solubility, concentration, and distribution of

  16. Preparation of nitrogen-doped carbon tubes

    DOE Patents [OSTI]

    Chung, Hoon Taek; Zelenay, Piotr

    2015-12-22

    A method for synthesizing nitrogen-doped carbon tubes involves preparing a solution of cyanamide and a suitable transition metal-containing salt in a solvent, evaporating the solvent to form a solid, and pyrolyzing the solid under an inert atmosphere under conditions suitable for the production of nitrogen-doped carbon tubes from the solid. Pyrolyzing for a shorter period of time followed by rapid cooling resulted in a tubes with a narrower average diameter.

  17. Does fluoride disrupt hydrogen bond network in cationic lipid bilayer? Time-dependent fluorescence shift of Laurdan and molecular dynamics simulations

    SciTech Connect (OSTI)

    Pokorna, Sarka; Jurkiewicz, Piotr; Hof, Martin; Vazdar, Mario; Cwiklik, Lukasz; Jungwirth, Pavel

    2014-12-14

    Time-dependent fluorescence shift (TDFS) of Laurdan embedded in phospholipid bilayers reports on hydration and mobility of the phospholipid acylgroups. Exchange of H{sub 2}O with D{sub 2}O prolongs the lifetime of lipid-water and lipid-water-lipid interactions, which is reflected in a significantly slower TDFS kinetics. Combining TDFS measurements in H{sub 2}O and D{sub 2}O hydrated bilayers with atomistic molecular dynamics (MD) simulations provides a unique tool for characterization of the hydrogen bonding at the acylgroup level of lipid bilayers. In this work, we use this approach to study the influence of fluoride anions on the properties of cationic bilayers composed of trimethylammonium-propane (DOTAP). The results obtained for DOTAP are confronted with those for neutral phosphatidylcholine (DOPC) bilayers. Both in DOTAP and DOPC H{sub 2}O/D{sub 2}O exchange prolongs hydrogen-bonding lifetime and does not disturb bilayer structure. These results are confirmed by MD simulations. TDFS experiments show, however, that for DOTAP this effect is cancelled in the presence of fluoride ions. We interpret these results as evidence that strongly hydrated fluoride is able to steal water molecules that bridge lipid carbonyls. Consequently, when attracted to DOTAP bilayer, fluoride disrupts the local hydrogen-bonding network, and the differences in TDFS kinetics between H{sub 2}O and D{sub 2}O hydrated bilayers are no longer observed. A distinct behavior of fluoride is also evidenced by MD simulations, which show different lipid-ion binding for Cl{sup ?} and F{sup ?}.

  18. Method of making molecularly doped composite polymer material

    DOE Patents [OSTI]

    Affinito, John D. [Tucson, AZ; Martin, Peter M. [Kennewick, WA; Graff, Gordon L. [West Richland, WA; Burrows, Paul E. [Kennewick, WA; Gross, Mark E. , Sapochak, Linda S.

    2005-06-21

    A method of making a composite polymer of a molecularly doped polymer. The method includes mixing a liquid polymer precursor with molecular dopant forming a molecularly doped polymer precursor mixture. The molecularly doped polymer precursor mixture is flash evaporated forming a composite vapor. The composite vapor is cryocondensed on a cool substrate forming a composite molecularly doped polymer precursor layer, and the cryocondensed composite molecularly doped polymer precursor layer is cross linked thereby forming a layer of the composite polymer layer of the molecularly doped polymer.

  19. Study of structure of the TiO{sub 2}MoO{sub 3} bilayer films by Raman spectroscopy

    SciTech Connect (OSTI)

    Santos, Elias de Barros; Sigoli, Fernando Aparecido; Mazali, Italo Odone

    2014-12-15

    Highlights: TiO{sub 2}MoO{sub 3} bilayer thin films were easily prepared by dip-coating technique. Ti and Mo metallo-organic compounds were used as source of its respective oxide. TiO{sub 2} in anatase phase and orthorhombic phase of ?-MoO{sub 3} were identified. The bilayer structure was investigated by Raman spectroscopy. - Abstract: In this work, TiO{sub 2}MoO{sub 3} films were easily prepared by dip-coating technique and metallo-organic decomposition process (MOD). Raman analyses indicate the formation of TiO{sub 2} in anatase phase and orthorhombic phase of ?-MoO{sub 3}. It was observed that the Raman bands intensities attributed to TiO{sub 2} and MoO{sub 3} oxides were dependent on the number of decompositiondeposition cycles (DDC). The different number of DDC generates films with different thicknesses and the Raman signal was sensitive to this variation. Raman analyses provided qualitative information about the bilayer structure of the bi-component TiO{sub 2}MoO{sub 3} films, which was confirmed by scanning electron microscopy. In this direction, the dip-coating technique and MOD process can be an efficient strategy to facile preparation of many samples to be used in applications.

  20. Twisted MoSe2 bilayers with variable local stacking and interlayer coupling revealed by low-frequency Raman spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Puretzky, Alexander A.; Liang, Liangbo; Li, Xufan; Xiao, Kai; Sumpter, Bobby G.; Meunier, Vincent; Geohegan, David B.

    2016-01-14

    Unique twisted bilayers of MoSe2 with multiple stacking orientations and interlayer couplings in the narrow range of twist angles, 60 ± 3°, are revealed by low-frequency Raman spectroscopy and theoretical analysis. The slight deviation from 60 allows the concomitant presence of patches featuring all three high-symmetry stacking configurations (2H or AA', AB', A'B) in one unique bilayer system. In this case, the periodic arrangement of the patches and their size strongly depend on the twist angle. Ab initio modeling predicts significant changes in frequencies and intensities of low-frequency modes versus stacking and twist angle. Experimentally, the variable stacking and couplingmore » across the interface is revealed by the appearance of two breathing modes corresponding to the mixture of the high-symmetry stacking configurations and unaligned regions of monolayers. Only one breathing mode is observed outside the narrow range of twist angles. This indicates a stacking transition to unaligned monolayers with mismatched atom registry without the in-plane restoring force required to generate a shear mode. As a result, the variable interlayer coupling and spacing in transition metal dichalcogenide bilayers revealed in this study may provide a new platform for optoelectronic applications of these materials.« less

  1. Evidence for charge Kondo effect in superconducting Tl-doped...

    Office of Scientific and Technical Information (OSTI)

    Evidence for charge Kondo effect in superconducting Tl-doped PbTe Citation Details In-Document Search Title: Evidence for charge Kondo effect in superconducting Tl-doped PbTe ...

  2. Sandwich beam model for free vibration analysis of bilayer graphene nanoribbons with interlayer shear effect

    SciTech Connect (OSTI)

    Nazemnezhad, Reza E-mail: rnazemnezhad@du.ac.ir; Shokrollahi, Hassan; Hosseini-Hashemi, Shahrokh

    2014-05-07

    In this study, sandwich beam model (SM) is proposed for free vibration analysis of bilayer graphene nanoribbons (BLGNRs) with interlayer shear effect. This model also takes into account the intralayer (in-plane) stretch of graphene nanoribbons. The molecular dynamics (MD) simulations using the software LAMMPS and Adaptive Intermolecular Reactive Empirical Bond Order (AIREBO) potential are done to validate the accuracy of the sandwich model results. The MD simulation results include the two first frequencies of cantilever BLGNRs with different lengths and two interlayer shear moduli, i.e., 0.25 and 4.6?GPa. These two interlayer shear moduli, 0.25 and 4.6?GPa, can be obtained by sliding a small flake of graphene on a large graphene substrate when the parameter of E-LJ term in AIREBO potential, epsilon-CC, is set to be 2.84 and 45.44?meV, respectively. The SM results for a wide range of bending rigidity values show that the proposed model, i.e., the SM, predicts much better than the previous beam model in which the intralayer stretch is ignored. In addition, it is observed that the model can properly predict the natural frequencies of BLGNRs for various values of the bending rigidity and the interlayer shear modulus.

  3. Neutron scattering from myelin revisited: bilayer asymmetry and water-exchange kinetics

    SciTech Connect (OSTI)

    Denninger, Andrew R. [Boston College, Chestnut Hill, MA 02467 (United States); Dem, Bruno; Cristiglio, Viviana [Institut LaueLangevin (ILL), CS 20156, F-38042 Grenoble CEDEX 9 (France); LeDuc, Graldine [European Synchrotron Radiation Facility (ESRF), CS 40220, F-38043 Grenoble CEDEX 9 (France); Feller, W. Bruce [NOVA Scientific Inc., Sturbridge, MA 01566 (United States); Kirschner, Daniel A., E-mail: kirschnd@bc.edu [Boston College, Chestnut Hill, MA 02467 (United States)

    2014-12-01

    The structure of internodal myelin in the rodent central and peripheral nervous systems has been determined using neutron diffraction. The kinetics of water exchange in these tissues is also described. Rapid nerve conduction in the central and peripheral nervous systems (CNS and PNS, respectively) of higher vertebrates is brought about by the ensheathment of axons with myelin, a lipid-rich, multilamellar assembly of membranes. The ability of myelin to electrically insulate depends on the regular stacking of these plasma membranes and on the presence of a number of specialized membrane-protein assemblies in the sheath, including the radial component, SchmidtLanterman incisures and the axoglial junctions of the paranodal loops. The disruption of this fine-structure is the basis for many demyelinating neuropathies in the CNS and PNS. Understanding the processes that govern myelin biogenesis, maintenance and destabilization requires knowledge of myelin structure; however, the tight packing of internodal myelin and the complexity of its junctional specializations make myelin a challenging target for comprehensive structural analysis. This paper describes an examination of myelin from the CNS and PNS using neutron diffraction. This investigation revealed the dimensions of the bilayers and aqueous spaces of myelin, asymmetry between the cytoplasmic and extracellular leaflets of the membrane, and the distribution of water and exchangeable hydrogen in internodal multilamellar myelin. It also uncovered differences between CNS and PNS myelin in their water-exchange kinetics.

  4. Asymmetric Electron Transport at Monolayer-Bilayer Heterojunctions of Epitaxial Graphene

    SciTech Connect (OSTI)

    Li, An-Ping [ORNL] [ORNL; Clark, Kendal W [ORNL] [ORNL; Zhang, Xiaoguang [ORNL] [ORNL; Gu, Gong [University of Tennessee, Knoxville (UTK)] [University of Tennessee, Knoxville (UTK); He, Guowei [Carnegie Mellon University (CMU)] [Carnegie Mellon University (CMU); Feenstra, Randall [Carnegie Mellon University (CMU)] [Carnegie Mellon University (CMU)

    2014-01-01

    The symmetry of the graphene honeycomb lattice is a key element determining many of graphene s unique electronic properties, such as the linear energy-momentum dispersion and the suppressed backscattering 1,2. However, line defects in large-scale epitaxial graphene films, such as grain boundaries, edges, surface steps, and changes in layer thickness, often break the sublatttice symmetry and can impact transport properties of graphene profoundly 3-6. Here we report asymmetric electron transport upon polarity reversal at individual monolayer-bilayer (ML-BL) boundaries in epitaxial graphene on SiC (0001), revealed by scanning tunneling potentiometry. A greater voltage drop is observed when the current flows from BL to ML graphene than in the reverse direction, and the difference remains nearly unchanged with increasing current. This is not a typical nonlinear conductance due to electron transmission through an asymmetric potential. Rather, it indicates the opening of a dynamic energy gap at the Fermi energy due to the Coulomb interaction between the injected nonequilibrium electron density and the pseudospin polarized Friedel oscillation charge density at the boundary. This intriguing heterojunction transport behavior opens a new avenue towards novel quantum functions such as quantum switching.

  5. Strong exciton-photon coupling with colloidal quantum dots in a high-Q bilayer microcavity

    SciTech Connect (OSTI)

    Giebink, Noel C; Wiederrecht, Gary P.; Wasielewski, Michael R

    2011-01-01

    We demonstrate evanescently coupled bilayer microcavities with Q -factors exceeding 250 fabricated by a simple spin-coating process. The cavity architecture consists of a slab waveguide lying upon a low refractive index spacer layer supported by a glass substrate. For a lossless guide layer, the cavity Q depends only on the thickness of the low index spacer and in principle can reach arbitrarily high values. We demonstrate the versatility of this approach by constructing cavities with a guide layer incorporating CdSe/ZnS core/shell quantum dots, where we observe strong coupling and hybridization between the 1S(e)-1S{sub 3/2} (h) and 1S(e)-2S{sub 3/2} (h) exciton states mediated by the cavity photon. This technique greatly simplifies the fabrication of high-Q planar microcavities for organic and inorganic quantum dot thin films and opens up new opportunities for the study of nonlinear optical phenomena in these materials.

  6. Metal-doped organic gels and method thereof

    DOE Patents [OSTI]

    Satcher, Jr., Joe H.; Baumann, Theodore F.

    2003-09-02

    Disclosed herein is a sol-gel polymerization process for synthesizing metal-doped organic gels. The process polymerizes metal salts of hydroxylated benzenes or hydroxylated benzene derivatives with alkyl or aryl aldehydes to form metal-doped, wet, organic gels. The gels can then be dried by supercritical solvent extraction to form metal-doped aerogels or by evaporation to form metal-doped xerogels. The aerogels and xerogels can then be pyrolyzed.

  7. Metal-doped organic gels and method thereof

    DOE Patents [OSTI]

    Satcher, Jr., Joe H.; Baumann, Theodore F.

    2007-10-23

    Disclosed herein is a sol-gel polymerization process for synthesizing metal-doped organic gels. The process polymerizes metal salts of hydroxylated benzenes or hydroxylated benzene derivatives with alkyl or aryl aldehydes to form metal-doped, wet, organic gels. The gels can then be dried by supercritical solvent extraction to form metal-doped aerogels or by evaporation to form metal-doped xerogels. The aerogels and xerogels can then be pyrolyzed.

  8. Undoped and doped poly(tetraphenylbenzidine) as sensitive material...

    Office of Scientific and Technical Information (OSTI)

    Subject: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; DOSEMETERS; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; EQUIPMENT; HOLES; IMPEDANCE; ...

  9. Doping against the native propensity of MoS₂: Degenerate hole doping by cation substitution

    SciTech Connect (OSTI)

    Suh, Joonki; Park, Tae-Eon; Lin, Der-Yuh; Fu, Deyi; Park, Joonsuk; Jung, Hee Joon; Chen, Yabin; Ko, Changhyun; Jang, Chaun; Sun, Yinghui; Sinclair, Robert; Chang, Joonyeon; Tongay, Sefaattin; Wu, Junqiao

    2014-12-10

    Layered transition metal dichalcogenides (TMDs) draw much attention as the key semiconducting material for two-dimensional electrical, optoelectronic, and spintronic devices. For most of these applications, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction. However, typically only one type of doping is stable for a particular TMD. For example, molybdenum disulfide (MoS₂) is natively an n-type presumably due to omnipresent electron-donating sulfur vacancies, and stable/controllable p-type doping has not been achieved. The lack of p-type doping hampers the development of charge-splitting p–n junctions of MoS₂, as well as limits carrier conduction to spin-degenerate conduction bands instead of the more interesting, spin-polarized valence bands. Traditionally, extrinsic p-type doping in TMDs has been approached with surface adsorption or intercalation of electron-accepting molecules. However, practically stable doping requires substitution of host atoms with dopants where the doping is secured by covalent bonding. In this work, we demonstrate stable p-type conduction in MoS₂ by substitutional niobium (Nb) doping, leading to a degenerate hole density of ~3 × 10¹⁹ cm⁻³. Structural and X-ray techniques reveal that the Nb atoms are indeed substitutionally incorporated into MoS₂ by replacing the Mo cations in the host lattice. van der Waals p–n homojunctions based on vertically stacked MoS₂ layers are fabricated, which enable gate-tunable current rectification. A wide range of microelectronic, optoelectronic, and spintronic devices can be envisioned from the demonstrated substitutional bipolar doping of MoS₂. From the miscibility of dopants with the host, it is also expected that the synthesis technique demonstrated here can be generally extended to other TMDs for doping against their native unipolar propensity.

  10. Doped luminescent materials and particle discrimination using same

    DOE Patents [OSTI]

    Doty, F. Patrick; Allendorf, Mark D; Feng, Patrick L

    2014-10-07

    Doped luminescent materials are provided for converting excited triplet states to radiative hybrid states. The doped materials may be used to conduct pulse shape discrimination (PSD) using luminescence generated by harvested excited triplet states. The doped materials may also be used to detect particles using spectral shape discrimination (SSD).

  11. Adsorption kinetics dictate monolayer self-assembly for both lipid-in and lipid-out approaches to droplet interface bilayer formation

    SciTech Connect (OSTI)

    Venkatesan, Guru A.; Lee, Joonho; Farimani, Amir Barati; Heiranian, Mohammad; Collier, C. Patrick; Narayana, Aluru; Sarles, Stephen A.

    2015-11-10

    The droplet interface bilayer (DIB) is a method to assemble planar lipid bilayer membranes between lipid-coated aqueous droplets and has gained popularity among researchers in many fields. Well-packed lipid monolayer on aqueous dropletoil interfaces is a prerequisite for successfully assembling DIBs. Such monolayers can be achieved by two different techniques: lipid-in, in which phospholipids in the form of liposomes are placed in water, and lipid-out, in which phospholipids are placed in oil as inverse micelles. While both approaches are capable of monolayer assembly needed for bilayer formation, droplet pairs assembled with these two techniques require significantly different incubation periods and exhibit different success rates for bilayer formation. In our study, we combine experimental interfacial tension measurements with molecular dynamics simulations of phospholipids (DPhPC and DOPC) assembled from water and oil origins to understand the differences in kinetics of monolayer formation. With the results from simulations and by using a simplified model to analyze dynamic interfacial tensions, we conclude that, at high lipid concentrations common to DIBs, monolayer formation is simple adsorption controlled for lipid-in technique, whereas it is predominantly adsorption-barrier controlled for the lipid-out technique due to the interaction of interface-bound lipids with lipid structures in the subsurface. The adsorption barrier established in lipid-out technique leads to a prolonged incubation time and lower bilayer formation success rate, proving a good correlation between interfacial tension measurements and bilayer formation. Also, we clarify that advective flow expedites monolayer formation and improves bilayer formation success rate by disrupting lipid structures, rather than enhancing diffusion, in the subsurface and at the interface for lipid-out technique. Additionally, electrical properties of DIBs formed with varying lipid placement and type are characterized.

  12. Adsorption kinetics dictate monolayer self-assembly for both lipid-in and lipid-out approaches to droplet interface bilayer formation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Venkatesan, Guru A.; Lee, Joonho; Farimani, Amir Barati; Heiranian, Mohammad; Collier, C. Patrick; Narayana, Aluru; Sarles, Stephen A.

    2015-11-10

    The droplet interface bilayer (DIB) is a method to assemble planar lipid bilayer membranes between lipid-coated aqueous droplets and has gained popularity among researchers in many fields. Well-packed lipid monolayer on aqueous droplet–oil interfaces is a prerequisite for successfully assembling DIBs. Such monolayers can be achieved by two different techniques: “lipid-in”, in which phospholipids in the form of liposomes are placed in water, and “lipid-out”, in which phospholipids are placed in oil as inverse micelles. While both approaches are capable of monolayer assembly needed for bilayer formation, droplet pairs assembled with these two techniques require significantly different incubation periods andmore » exhibit different success rates for bilayer formation. In our study, we combine experimental interfacial tension measurements with molecular dynamics simulations of phospholipids (DPhPC and DOPC) assembled from water and oil origins to understand the differences in kinetics of monolayer formation. With the results from simulations and by using a simplified model to analyze dynamic interfacial tensions, we conclude that, at high lipid concentrations common to DIBs, monolayer formation is simple adsorption controlled for lipid-in technique, whereas it is predominantly adsorption-barrier controlled for the lipid-out technique due to the interaction of interface-bound lipids with lipid structures in the subsurface. The adsorption barrier established in lipid-out technique leads to a prolonged incubation time and lower bilayer formation success rate, proving a good correlation between interfacial tension measurements and bilayer formation. Also, we clarify that advective flow expedites monolayer formation and improves bilayer formation success rate by disrupting lipid structures, rather than enhancing diffusion, in the subsurface and at the interface for lipid-out technique. Additionally, electrical properties of DIBs formed with varying lipid placement and type are characterized.« less

  13. Lanthanide and actinide doped glasses as reference standards for dye doped systems

    SciTech Connect (OSTI)

    Pope, E.J.A.; Hentschel, A.

    1996-12-31

    Organic dye molecules are well known to be subject to chemical and optical bleaching damage, temperature instability, and other forms of optical degradation. Currently recognized methods of referencing rely upon fluorescent salt solutions, such as quinine sulfate. In this paper, optically-active lanthanide and actinide doped gel-glasses are compared as reference standards for dye doped polymers. Samples are subjected to continuous illumination by 254 nm UV radiation. While dye-doped polymers exhibited approximately 65 percent decline in fluorescence intensity after 96 hours of irradiation, glass samples and glass powder in resin showed no decline in fluorescence intensities.

  14. High resolution three-dimensional doping profiler

    DOE Patents [OSTI]

    Thundat, Thomas G. (Knoxville, TN); Warmack, Robert J. (Knoxville, TN)

    1999-01-01

    A semiconductor doping profiler provides a Schottky contact at one surface and an ohmic contact at the other. While the two contacts are coupled to a power source, thereby establishing an electrical bias in the semiconductor, a localized light source illuminates the semiconductor to induce a photocurrent. The photocurrent changes in accordance with the doping characteristics of the semiconductor in the illuminated region. By changing the voltage of the power source the depth of the depletion layer can be varied to provide a three dimensional view of the local properties of the semiconductor.

  15. Electronic confinement in modulation doped quantum dots (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Electronic confinement in modulation doped quantum dots Citation Details In-Document Search Title: Electronic confinement in modulation doped quantum dots Modulation doping, an effective way to dope quantum dots (QDs), modifies the confinement energy levels in the QDs. We present a self-consistent full multi-grid solver to analyze the effect of modulation doping on the confinement energy levels in large-area structures containing Si QDs in SiO{sub 2} and Si{sub 3}N{sub 4}

  16. Importance of Doping and Frustration in Itinerant Fe-doped Cr2Al

    SciTech Connect (OSTI)

    Susner, Michael A; Parker, David S; Safa-Sefat, Athena

    2015-01-01

    We have performed an experimental and theoretical study comparing the effects of Fe-doping of Cr2Al, an antiferromagnet with a N el temperature of 670 K, with known results on Fe-doping of antiferromagnetic bcc Cr. (Cr1-xFex)2Al materials are found to exhibit a rapid suppression of antiferromagnetic order with the presence of Fe, decreasing TN to 170 K for x=0.10. Antiferromagnetic behavior disappears entirely at x 0.125 after which point increasing paramagnetic behavior is exhibited. This is unlike the effects of Fe doping of bcc antiferromagnetic Cr, in which TN gradually decreases followed by the appearance of a ferromagnetic state. Theoretical calculations explain that the Cr2Al-Fe suppression of magnetic order originates from two effects: the first is band narrowing caused by doping of additional electrons from Fe substitution that weakens itinerant magnetism; the second is magnetic frustration of the Cr itinerant moments in Fe-substituted Cr2Al. In pure-phase Cr2Al, the Cr moments have an antiparallel alignment; however, these are destroyed through Fe substitution and the preference of Fe for parallel alignment with Cr. This is unlike bulk Fe-doped Cr alloys in which the Fe anti-aligns with the Cr atoms, and speaks to the importance of the Al atoms in the magnetic structure of Cr2Al and Fe-doped Cr2Al.

  17. Importance of Doping and Frustration in Itinerant Fe-doped Cr2Al

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Susner, Michael A; Parker, David S; Safa-Sefat, Athena

    2015-01-01

    We have performed an experimental and theoretical study comparing the effects of Fe-doping of Cr2Al, an antiferromagnet with a N el temperature of 670 K, with known results on Fe-doping of antiferromagnetic bcc Cr. (Cr1-xFex)2Al materials are found to exhibit a rapid suppression of antiferromagnetic order with the presence of Fe, decreasing TN to 170 K for x=0.10. Antiferromagnetic behavior disappears entirely at x 0.125 after which point increasing paramagnetic behavior is exhibited. This is unlike the effects of Fe doping of bcc antiferromagnetic Cr, in which TN gradually decreases followed by the appearance of a ferromagnetic state. Theoretical calculationsmore » explain that the Cr2Al-Fe suppression of magnetic order originates from two effects: the first is band narrowing caused by doping of additional electrons from Fe substitution that weakens itinerant magnetism; the second is magnetic frustration of the Cr itinerant moments in Fe-substituted Cr2Al. In pure-phase Cr2Al, the Cr moments have an antiparallel alignment; however, these are destroyed through Fe substitution and the preference of Fe for parallel alignment with Cr. This is unlike bulk Fe-doped Cr alloys in which the Fe anti-aligns with the Cr atoms, and speaks to the importance of the Al atoms in the magnetic structure of Cr2Al and Fe-doped Cr2Al.« less

  18. High ZT bismuth-doped perovskite thermoelectrics

    DOE Patents [OSTI]

    Brown-Shaklee, Harlan James

    2016-02-23

    A bismuth-doped perovskite thermoelectric, comprising (Bi.sub.x, La.sub.0.1-x)SrTiO.sub.3, wherein x is between 0.01 and 0.1, can have a high figure-of-merit, ZT.

  19. Nitrogen-doped zirconia: A comparison with cation stabilized zirconia

    SciTech Connect (OSTI)

    Lee, Jong-Sook . E-mail: jong-sook.lee@fkf.mpg.de; Lerch, Martin; Maier, Joachim

    2006-01-15

    The conductivity behavior of nitrogen-doped zirconia is compared with that of zirconia doped with lower-valent cations and discussed in the framework of defect-defect interactions. While nominally introducing the same number of vacancies as yttrium, nitrogen dopants introduced in the anion sublattice of zirconia lead to substantially different defect kinetics and energetics. Compared to the equivalent yttrium doping nitrogen doping in the Y-Zr-O-N system substantially increases the activation energy and correspondingly decreases the conductivity at temperatures below 500{sup -}bar C in the vacancy range below 4mol%. The comparison of N-doped zirconia and zirconia systems doped with size-matched cation stabilizers, such as Sc, Yb and Y, shows that elastically driven vacancy-vacancy ordering interactions can phenomenologically account for the temperature- and composition-dependence. It is striking that materials with superior high-temperature conductivities due to weak dopant-vacancy interactions undergo severe deterioration at low temperature due to the strong vacancy-ordering. The analysis also explains qualitatively similar effects of Y co-doping in Yb-, Sc-, and N-doped zirconia. Small amount of Y in N-doped zirconia as well as in Sc-doped zirconia appears to hinder the formation of the long-range ordered phase and thus enhance the conductivity substantially.

  20. Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

    SciTech Connect (OSTI)

    Ciuk, Tymoteusz [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Cakmakyapan, Semih; Ozbay, Ekmel [Department of Electrical and Electronics Engineering, Department of Physics, Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Caban, Piotr; Grodecki, Kacper; Pasternak, Iwona; Strupinski, Wlodek, E-mail: wlodek.strupinski@itme.edu.pl [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Krajewska, Aleksandra [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Optoelectronics, Military University of Technology, Gen. S. Kaliskiego 2, 00-908 Warsaw (Poland); Szmidt, Jan [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

    2014-09-28

    The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ~10 nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ~190 ??m for step height hS = 10 nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications.

  1. Highly Emissive Transition Metal Ion Doped Semiconducting Nanocrystals

    SciTech Connect (OSTI)

    Jana, Santanu; Srivastava, Bhupendra B.; Pradhan, Narayan; Sarma, D. D.

    2011-07-15

    Doped semiconductor nanocrystals (d-dots), specifically ones not containing heavy metal ions, have the potential to become a class of mainstream emissive materials. Mn- and Cu-doped ZnSe or ZnS d-dots can cover an emission window similar to that of the current workhorse of intrinsic quantum dot (q-dots) emitters, CdSe nanocrystals. We synthesized high quality stable Cu doped ZnSe in nonpolar as well as polar solvent. The emission intensity of these doped nanocrystals is found stable for months under UV irradiation, after different multifunctional ligand which is important for any biological detection. We have also synthesized the stable Mn doped ZnS in nonpolar solvent more than 50% QY.. The doped nanocrystals are characterized by TEM, XRD, EPR and ICP analysis.

  2. Tungsten-doped thin film materials

    DOE Patents [OSTI]

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  3. Aluminum doped zinc oxide for organic photovoltaics

    SciTech Connect (OSTI)

    Murdoch, G. B.; Hinds, S.; Sargent, E. H.; Tsang, S. W.; Mordoukhovski, L.; Lu, Z. H.

    2009-05-25

    Aluminum doped zinc oxide (AZO) was grown via magnetron sputtering as a low-cost alternative to indium tin oxide (ITO) for organic photovoltaics (OPVs). Postdeposition ozone treatment resulted in devices with lower series resistance, increased open-circuit voltage, and power conversion efficiency double that of devices fabricated on untreated AZO. Furthermore, cells fabricated using ozone treated AZO and standard ITO displayed comparable performance.

  4. Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wire

    DOE Patents [OSTI]

    Suplinskas, Raymond J.; Finnemore, Douglas; Bud'ko, Serquei; Canfield, Paul

    2007-11-13

    A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

  5. Hydrogenation effects on carrier transport in boron-doped

    Office of Scientific and Technical Information (OSTI)

    ultrananocrystalline diamond/amorphous carbon films prepared by coaxial arc plasma deposition (Journal Article) | SciTech Connect Hydrogenation effects on carrier transport in boron-doped ultrananocrystalline diamond/amorphous carbon films prepared by coaxial arc plasma deposition Citation Details In-Document Search Title: Hydrogenation effects on carrier transport in boron-doped ultrananocrystalline diamond/amorphous carbon films prepared by coaxial arc plasma deposition Boron-doped

  6. Development of photocatalyst by combined nitrogen and yttrium doping

    SciTech Connect (OSTI)

    Khan, Matiullah; Cao, Wenbin

    2014-01-01

    Graphical abstract: The simulated compensated YN{sub SUB} co-doped TiO{sub 2} model can reasonably explain the experimental observations. Calculation results show that substitutional Y at Ti sites and substitutional N at O sites with an oxygen vacancy give stable configuration, reduced band gap, better visible light absorption and enhance separations of photoexcited charge carriers. The experimental observations confirmed the theoretical findings. - Highlights: (Y, N) codoped TiO{sub 2} was synthesized by mild one pot hydrothermal method. The Y doping concentration was varied from 0.01 to 1.38 at%. 0.05% (Y, N) codoped TiO{sub 2} shows enhanced visible light photocatalytic activity. Compensated and noncompensated ab-initio calculations were performed. Calculation results reasonably explained the experimental findings. - Abstract: Titanium dioxide co-doped with yttrium and nitrogen with different yttrium doping concentration has been synthesized by mild one pot hydrothermal method without any post calcination for crystallization. Irrespective of the yttrium doping concentration, all the synthesized samples were composed of pure anatase phase with good crystallinity. And the synthesized co-doped samples have spherical morphology with uniform particle size distribution. The absorption edge of the co-doped TiO{sub 2} was shifted toward visible light region depicting that the intrinsic band gap of TiO{sub 2} was affected by the co-doping. Among the different samples, the co-doped sample with 0.05% yttrium doping concentration exhibits enhanced visible light photocatalytic activity by degradation of methylene blue in aqueous solution. Compensated and non-compensated yttriumnitrogen co-doped TiO{sub 2} models were simulated using density functional theory to explain the experimental findings. The calculation results show that the compensated yttriumnitrogen co-doped TiO{sub 2} model may reasonably explain the experimental observations due to its stable configuration, narrowed band gap and enhanced separation of photoexcited carriers.

  7. Enhanced separation efficiency of photoinduced charges for antimony-doped

    Office of Scientific and Technical Information (OSTI)

    tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction semiconductors with varied Sb doping concentration (Journal Article) | SciTech Connect Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction semiconductors with varied Sb doping concentration Citation Details In-Document Search Title: Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction

  8. Lithium Salt-doped, Gelled Polymer Electrolyte with a Nanoporous...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Find More Like This Return to Search Lithium Salt-doped, Gelled Polymer Electrolyte with a ... electrolyte material for use in lithium ion batteries that exhibits better ion ...

  9. A new class of high ZT doped bulk nanothermoelectrics through...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    bulk nanothermoelectrics through bottom-up synthesis A new class of high ZT doped bulk nanothermoelectrics through bottom-up synthesis Reports on synthesis of large quantities of ...

  10. Moderate Doping Leads to High Performance of Semiconductor/Insulator...

    Office of Scientific and Technical Information (OSTI)

    Title: Moderate Doping Leads to High Performance of SemiconductorInsulator Polymer Blend Transistors Authors: Lu, Guanghao ; Blakesley, James ; Himmelberger, Scott ; Pingel, ...

  11. Chemical Doping Enhances Electronic Transport in Networks of...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    June 12, 2015, Research Highlights Chemical Doping Enhances Electronic Transport in ... Here, it is shown that upon chemical oxidation, hexabenzocoronenes (HBCs) enhance charge ...

  12. Fermi Energy Tuning with Light to Control Doping Profiles During...

    Office of Scientific and Technical Information (OSTI)

    Fermi Energy Tuning with Light to Control Doping Profiles During Epitaxy; Article No. 182105 Citation Details In-Document Search Title: Fermi Energy Tuning with Light to Control ...

  13. Lanthanide doped strontium-barium cesium halide scintillators

    DOE Patents [OSTI]

    Bizarri, Gregory; Bourret-Courchesne, Edith; Derenzo, Stephen E.; Borade, Ramesh B.; Gundiah, Gautam; Yan, Zewu; Hanrahan, Stephen M.; Chaudhry, Anurag; Canning, Andrew

    2015-06-09

    The present invention provides for a composition comprising an inorganic scintillator comprising an optionally lanthanide-doped strontium-barium, optionally cesium, halide, useful for detecting nuclear material.

  14. Lithium/Sulfur Batteries Based on Doped Mesoporous Carbon - Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Find More Like This Return to Search LithiumSulfur Batteries Based on Doped Mesoporous ... which was used in lithiumsulfur batteries that were tested in ...

  15. Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

    SciTech Connect (OSTI)

    Bocheux, A.; Robin, I. C.; Bonaimé, J.; Hyot, B.; Feuillet, G.; Kolobov, A. V.; Fons, P.; Mitrofanov, K. V.; Tominaga, J.; Tamenori, Y.

    2014-05-21

    In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

  16. In-situ high resolution transmission electron microscopy observation of silicon nanocrystal nucleation in a SiO{sub 2} bilayered matrix

    SciTech Connect (OSTI)

    Yang, T. C.-J. Wu, L.; Lin, Z.; Jia, X.; Puthen-Veettil, B.; Zhang, T.; Conibeer, G.; Perez-Wurfl, I.; Kauffmann, Y.; Rothschild, A.

    2014-08-04

    Solid-state nucleation of Si nanocrystals in a SiO{sub 2} bilayered matrix was observed at temperatures as low as 450?C. This was achieved by aberration corrected high-resolution transmission electron microscopy (HRTEM) with real-time in-situ heating up to 600?C. This technique is a valuable characterization tool especially with the recent interest in Si nanostructures for light emitting devices, non-volatile memories, and third-generation photovoltaics which all typically require a heating step in their fabrication. The control of size, shape, and distribution of the Si nanocrystals are critical for these applications. This experimental study involves in-situ observation of the nucleation of Si nanocrystals in a SiO{sub 2} bilayered matrix fabricated through radio frequency co-sputtering. The results show that the shapes of Si nanocrystals in amorphous SiO{sub 2} bilayered matrices are irregular and not spherical, in contrast to many claims in the literature. Furthermore, the Si nanocrystals are well confined within their layers by the amorphous SiO{sub 2}. This study demonstrates the potential of in-situ HRTEM as a tool to observe the real time nucleation of Si nanocrystals in a SiO{sub 2} bilayered matrix. Furthermore, ideas for improvements on this in-situ heating HRTEM technique are discussed.

  17. Exploiting lipopolysaccharide-induced deformation of lipid bilayers to modify membrane composition and generate two-dimensional geometric membrane array patterns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Adams, Peter G.; Swingle, Kirstie L.; Paxton, Walter F.; Nogan, John J.; Stromberg, Loreen R.; Firestone, Millicent A.; Mukundan, Harshini; Montaño, Gabriel A.

    2015-05-27

    Supported lipid bilayers have proven effective as model membranes for investigating biophysical processes and in development of sensor and array technologies. The ability to modify lipid bilayers after their formation and in situ could greatly advance membrane technologies, but is difficult via current state-of-the-art technologies. Here we demonstrate a novel method that allows the controlled post-formation processing and modification of complex supported lipid bilayer arrangements, under aqueous conditions. We exploit the destabilization effect of lipopolysaccharide, an amphiphilic biomolecule, interacting with lipid bilayers to generate voids that can be backfilled to introduce desired membrane components. We further demonstrate that when usedmore » in combination with a single, traditional soft lithography process, it is possible to generate hierarchically-organized membrane domains and microscale 2-D array patterns of domains. Significantly, this technique can be used to repeatedly modify membranes allowing iterative control over membrane composition. This approach expands our toolkit for functional membrane design, with potential applications for enhanced materials templating, biosensing and investigating lipid-membrane processes.« less

  18. Exploiting lipopolysaccharide-induced deformation of lipid bilayers to modify membrane composition and generate two-dimensional geometric membrane array patterns

    SciTech Connect (OSTI)

    Adams, Peter G.; Swingle, Kirstie L.; Paxton, Walter F.; Nogan, John J.; Stromberg, Loreen R.; Firestone, Millicent A.; Mukundan, Harshini; Montaño, Gabriel A.

    2015-05-27

    Supported lipid bilayers have proven effective as model membranes for investigating biophysical processes and in development of sensor and array technologies. The ability to modify lipid bilayers after their formation and in situ could greatly advance membrane technologies, but is difficult via current state-of-the-art technologies. Here we demonstrate a novel method that allows the controlled post-formation processing and modification of complex supported lipid bilayer arrangements, under aqueous conditions. We exploit the destabilization effect of lipopolysaccharide, an amphiphilic biomolecule, interacting with lipid bilayers to generate voids that can be backfilled to introduce desired membrane components. We further demonstrate that when used in combination with a single, traditional soft lithography process, it is possible to generate hierarchically-organized membrane domains and microscale 2-D array patterns of domains. Significantly, this technique can be used to repeatedly modify membranes allowing iterative control over membrane composition. This approach expands our toolkit for functional membrane design, with potential applications for enhanced materials templating, biosensing and investigating lipid-membrane processes.

  19. Doping evolution of the electronic structure in the single-layer...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Doping evolution of the electronic structure in the single-layer cuprates ... Citation Details In-Document Search Title: Doping evolution of the electronic structure in ...

  20. Doping evolution of the electronic structure in the single-layer...

    Office of Scientific and Technical Information (OSTI)

    Doping evolution of the electronic structure in the single-layer cuprates ... Citation Details In-Document Search Title: Doping evolution of the electronic structure in ...

  1. Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gamalski, A. D.; Tersoff, J.; Stach, E. A.

    2016-04-13

    We study the growth of GaN nanowires from liquid Au–Ga catalysts using environmental transmission electron microscopy. GaN wires grow in either (11¯20) or (11¯00) directions, by the addition of {11¯00} double bilayers via step flow with multiple steps. Step-train growth is not typically seen with liquid catalysts, and we suggest that it results from low step mobility related to the unusual double-height step structure. Finally, the results here illustrate the surprising dynamics of catalytic GaN wire growth at the nanoscale and highlight striking differences between the growth of GaN and other III–V semiconductor nanowires.

  2. Studies on measuring surface adhesion between sidewalls in boron doped

    Office of Scientific and Technical Information (OSTI)

    ultrananocrystalline diamond based microelectromechanical devices (Journal Article) | DOE PAGES Studies on measuring surface adhesion between sidewalls in boron doped ultrananocrystalline diamond based microelectromechanical devices This content will become publicly available on May 25, 2017 Title: Studies on measuring surface adhesion between sidewalls in boron doped ultrananocrystalline diamond based microelectromechanical devices Authors: Buja, Federico ; Kokorian, Jaap ; Sumant, Anirudha

  3. Superlattice doped layers for amorphous silicon photovoltaic cells

    DOE Patents [OSTI]

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  4. Nitrogen-Doped Graphene and its Application in Electrochemical Biosensing

    SciTech Connect (OSTI)

    Wang, Ying; Shao, Yuyan; Matson, Dean W.; Li, Jinghong; Lin, Yuehe

    2010-05-05

    Chemical doping with foreign atoms is an effective method to intrinsically modify the properties of host materials. Among them, nitrogen (N) doping plays a critical role in regulating the electronic properties of carbon materials. Recently, graphene as a true 2-dimensional carbon material has shown fascinating applications in bioelectronics and biosensors. In this paper, we report a facile strategy to prepare N-doped graphene by using plasma treatment of pristine graphene synthesized via chemical method. Meanwhile, a possible schematic diagram has been proposed to detail the structure of N-doped graphene. By controlling the exposure time, N percentage in host grapheme can be regulated ranging from 0.11% to 1.35%. Moreover, the as prepared N-doped graphene has displayed high electrocatalytic activity to hydrogen peroxide and further been used for glucose biosensing with concentration as low as 0.01 mM in the presence of interferences.

  5. N-doping of organic semiconductors by bis-metallosandwich compounds

    DOE Patents [OSTI]

    Barlow, Stephen; Qi, Yabing; Kahn, Antoine; Marder, Seth; Kim, Sang Bok; Mohapatra, Swagat K.; Guo, Song

    2016-01-05

    The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.

  6. Color stable manganese-doped phosphors

    DOE Patents [OSTI]

    Lyons, Robert Joseph; Setlur, Anant Achyut; Deshpande, Anirudha Rajendra; Grigorov, Ljudmil Slavchev

    2012-08-28

    A process for preparing color stable Mn.sup.+4 doped phosphors includes providing a phosphor of formula I; A.sub.x[MF.sub.y]:Mn.sup.+4 I and contacting the phosphor in particulate form with a saturated solution of a composition of formula II in aqueous hydrofluoric acid; A.sub.x[MF.sub.y]; II wherein A is Li, Na, K, Rb, Cs, NR.sub.4 or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; R is H, lower alkyl, or a combination thereof; x is the absolute value of the charge of the [MF.sub.y] ion; and y is 5, 6 or 7. In particular embodiments, M is Si, Ge, Sn, Ti, Zr, or a combination thereof. A lighting apparatus capable of emitting white light includes a semiconductor light source; and a phosphor composition radiationally coupled to the light source, and which includes a color stable Mn.sup.+4 doped phosphor.

  7. Magnetism and electronic structure of (001)- and (111)-oriented LaTiO{sub 3} bilayers sandwiched in LaScO{sub 3} barriers

    SciTech Connect (OSTI)

    Weng, Yakui; Dong, Shuai

    2015-05-07

    In this study, the magnetism and electronic structure of LaTiO{sub 3} bilayers along both the (001) and (111) orientations are calculated using the density functional theory. The band insulator LaScO{sub 3} is chosen as the barrier layer and substrate to obtain the isolating LaTiO{sub 3} bilayer. For both the (001)- and (111)-oriented cases, LaTiO{sub 3} demonstrates the G-type antiferromagnetism as the ground state, similar to the bulk material. However, the electronic structure is significantly changed. The occupied bands of Ti are much narrower in the (111) case, giving a nearly flat band. As a result, the exchange coupling between nearest-neighbor Ti ions is reformed in these superlattices, which will affect the Nel temperature significantly.

  8. Enhanced Photocatalytic Property of Cu Doped Sodium Niobate

    SciTech Connect (OSTI)

    Xu, Jianbin; Zhang, Feng; Sun, Bingyang; Du, Yingge; Li, Guoqiang; Zhang, Weifeng

    2015-09-29

    We investigate the photocatalytic activity of Cu doped NaNbO3 powder sample prepared by the modified polymer complex method. The photocatalytic activity of hydrogen evolution from methanol aqueous solution was improved by Cu 2.6 at% doping. The photocatalytic degradation of rhodamine B under visible light irradiation was enhanced in comparison with pure NaNbO3. Cu inctroduction improved the adsorption property of NaNbO3, judging from the Fourier transform infrared spectra. Moreover, the ultraviolet light excitation in Cu doped sample was found to accelerate the mineralized process.

  9. Self-doped molecular composite battery electrolytes

    DOE Patents [OSTI]

    Harrup, Mason K.; Wertsching, Alan K.; Stewart, Frederick F.

    2003-04-08

    This invention is in solid polymer-based electrolytes for battery applications. It uses molecular composite technology, coupled with unique preparation techniques to render a self-doped, stabilized electrolyte material suitable for inclusion in both primary and secondary batteries. In particular, a salt is incorporated in a nano-composite material formed by the in situ catalyzed condensation of a ceramic precursor in the presence of a solvated polymer material, utilizing a condensation agent comprised of at least one cation amenable to SPE applications. As such, the counterion in the condensation agent used in the formation of the molecular composite is already present as the electrolyte matrix develops. This procedure effectively decouples the cation loading levels required for maximum ionic conductivity from electrolyte physical properties associated with condensation agent loading levels by utilizing the inverse relationship discovered between condensation agent loading and the time domain of the aging step.

  10. Flat Ge-doped optical fibres for food irradiation dosimetry

    SciTech Connect (OSTI)

    Noor, N. Mohd; Jusoh, M. A.; Razis, A. F. Abdull; Alawiah, A.; Bradley, D. A.

    2015-04-24

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%.

  11. Fluorine compounds for doping conductive oxide thin films

    DOE Patents [OSTI]

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  12. Role of microstructure and doping on the mechanical strength...

    Office of Scientific and Technical Information (OSTI)

    Heavy doping reduced the strength of columnar polysilicon specimens to 0.9 0.1 GPa. On grounds of Weibull statistics, the experimental results from specimens with gauge sections ...

  13. Tuning nucleation density of metal island with charge doping...

    Office of Scientific and Technical Information (OSTI)

    Further kinetic Monte Carlo simulation showed that the nucleation island number density can be increased up to six times larger under hole-doping and can be decreased down to ten ...

  14. Electronic Strengthening of Graphene by Charge Doping (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Electronic Strengthening of Graphene by Charge Doping Citation Details In-Document Search Title: Electronic Strengthening of Graphene by Charge Doping Authors: Si, Chen ; Duan, Wenhui ; Liu, Zheng ; Liu, Feng Publication Date: 2012-11-27 OSTI Identifier: 1101835 Type: Publisher's Accepted Manuscript Journal Name: Physical Review Letters Additional Journal Information: Journal Volume: 109; Journal Issue: 22; Journal ID: ISSN 0031-9007 Publisher: American Physical Society

  15. Moderate Doping Leads to High Performance of Semiconductor/Insulator

    Office of Scientific and Technical Information (OSTI)

    Polymer Blend Transistors (Journal Article) | SciTech Connect Moderate Doping Leads to High Performance of Semiconductor/Insulator Polymer Blend Transistors Citation Details In-Document Search Title: Moderate Doping Leads to High Performance of Semiconductor/Insulator Polymer Blend Transistors Authors: Lu, Guanghao ; Blakesley, James ; Himmelberger, Scott ; Pingel, Patrick ; Frisch, Johannes ; Lieberwirth, Ingo ; Salzmann, Ingo ; Oehzelt, Martin ; Pietro, Riccardo Di ; Salleo, Alberto ;

  16. Doped carbon nanostructure field emitter arrays for infrared imaging

    DOE Patents [OSTI]

    Korsah, Kofi [Knoxville, TN; Baylor, Larry R [Farragut, TN; Caughman, John B [Oak Ridge, TN; Kisner, Roger A [Knoxville, TN; Rack, Philip D [Knoxville, TN; Ivanov, Ilia N [Knoxville, TN

    2009-10-27

    An infrared imaging device and method for making infrared detector(s) having at least one anode, at least one cathode with a substrate electrically connected to a plurality of doped carbon nanostructures; and bias circuitry for applying an electric field between the anode and the cathode such that when infrared photons are adsorbed by the nanostructures the emitted field current is modulated. The detectors can be doped with cesium to lower the work function.

  17. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR

    Office of Scientific and Technical Information (OSTI)

    NANOSTRUCTURES (Journal Article) | SciTech Connect OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES Citation Details In-Document Search Title: OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk

  18. Aluminum-doped Zinc Oxide Nanoink - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Photovoltaic Solar Photovoltaic Industrial Technologies Industrial Technologies Building Energy Efficiency Building Energy Efficiency Find More Like This Return to Search Aluminum-doped Zinc Oxide Nanoink Lawrence Berkeley National Laboratory Contact LBL About This Technology Technology Marketing Summary Scientists at Berkeley Lab have developed a method for fabricating conductive aluminum-doped zinc oxide (AZO) nanocrystals that provide a lower cost, less toxic, earth-abundant alternative

  19. Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Laroche, Dominique; Huang, ShiHsien; Nielsen, Erik; Liu, Chee Wee; Li, Jiun -Yun; Lu, Tzu -Ming

    2015-04-08

    We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Additionally, the combined Hall densities (n Hall ) ranging from 2.6 × 1010 cm-2 to 2.7 × 1011 cm-2 were achieved, yielding a maximal combined Hall mobility (μHall ) of 7.7 × 105 cm2/(V • s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to nHall > 3.3 × 1010 cm-2, consistent with Schrödinger-Poisson simulations. Furthermore, the integer and fractional quantummore » Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.« less

  20. Predicting solute partitioning in lipid bilayers: Free energies and partition coefficients from molecular dynamics simulations and COSMOmic

    SciTech Connect (OSTI)

    Jakobtorweihen, S. Ingram, T.; Gerlach, T.; Smirnova, I.; Zuniga, A. Chaides; Keil, F. J.

    2014-07-28

    Quantitative predictions of biomembrane/water partition coefficients are important, as they are a key property in pharmaceutical applications and toxicological studies. Molecular dynamics (MD) simulations are used to calculate free energy profiles for different solutes in lipid bilayers. How to calculate partition coefficients from these profiles is discussed in detail and different definitions of partition coefficients are compared. Importantly, it is shown that the calculated coefficients are in quantitative agreement with experimental results. Furthermore, we compare free energy profiles from MD simulations to profiles obtained by the recent method COSMOmic, which is an extension of the conductor-like screening model for realistic solvation to micelles and biomembranes. The free energy profiles from these molecular methods are in good agreement. Additionally, solute orientations calculated with MD and COSMOmic are compared and again a good agreement is found. Four different solutes are investigated in detail: 4-ethylphenol, propanol, 5-phenylvaleric acid, and dibenz[a,h]anthracene, whereby the latter belongs to the class of polycyclic aromatic hydrocarbons. The convergence of the free energy profiles from biased MD simulations is discussed and the results are shown to be comparable to equilibrium MD simulations. For 5-phenylvaleric acid the influence of the carboxyl group dihedral angle on free energy profiles is analyzed with MD simulations.

  1. Trench process and structure for backside contact solar cells with polysilicon doped regions

    DOE Patents [OSTI]

    De Ceuster, Denis; Cousins, Peter John; Smith, David D.

    2010-12-14

    A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

  2. Trench process and structure for backside contact solar cells with polysilicon doped regions

    DOE Patents [OSTI]

    De Ceuster, Denis; Cousins, Peter John; Smith, David D

    2013-05-28

    A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

  3. Trench process and structure for backside contact solar cells with polysilicon doped regions

    DOE Patents [OSTI]

    De Ceuster, Denis; Cousins, Peter John; Smith, David D

    2014-03-18

    A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

  4. High gain, low noise, fully complementary logic inverter based on bi-layer WSe{sub 2} field effect transistors

    SciTech Connect (OSTI)

    Das, Saptarshi; Roelofs, Andreas; Dubey, Madan

    2014-08-25

    In this article, first, we show that by contact work function engineering, electrostatic doping and proper scaling of both the oxide thickness and the flake thickness, high performance p- and n-type WSe{sub 2} field effect transistors (FETs) can be realized. We report record high drive current of 98??A/?m for the electron conduction and 110 ?A/?m for the hole conduction in Schottky barrier WSe{sub 2} FETs. Then, we combine high performance WSe{sub 2} PFET with WSe{sub 2} NFET in double gated transistor geometry to demonstrate a fully complementary logic inverter. We also show that by adjusting the threshold voltages for the NFET and the PFET, the gain and the noise margin of the inverter can be significantly enhanced. The maximum gain of our chemical doping free WSe{sub 2} inverter was found to be ?25 and the noise margin was close to its ideal value of ?2.5?V for a supply voltage of V{sub DD}?=?5.0?V.

  5. Color stable manganese-doped phosphors

    DOE Patents [OSTI]

    Lyons, Robert Joseph; Setlur, Anant Achyut; Deshpande, Anirundha Rajendra; Grigorov, Ljudmil Slavchev

    2014-04-29

    A lighting apparatus capable of emitting white light includes a semiconductor light source; and a phosphor material radiationally coupled to the light source. The phosphor material includes a color-stable Mn.sup.+4 doped phosphor prepared by a process including providing a phosphor of formula I; A.sub.x[MF.sub.y]:Mn.sup.+4 I and contacting the phosphor in particulate form with a saturated solution of a composition of formula II in aqueous hydrofluoric acid; A.sub.x[MF.sub.y]; II wherein A is Li, Na, K, Rb, Cs, NR.sub.4 or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; R is H, lower alkyl, or a combination thereof; x is the absolute value of the charge of the [MF.sub.y] ion; and y is 5, 6 or 7. In particular embodiments, M is Si, Ge, Sn, Ti, Zr, or a combination thereof.

  6. Ammonia Sensors Based on Doped-Sol-Gel-Tipped Optical Fibers...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Sensors Based on Doped-Sol-Gel-Tipped Optical Fibers for Catalyst System Diagnostics Ammonia Sensors Based on Doped-Sol-Gel-Tipped Optical Fibers for Catalyst System Diagnostics ...

  7. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  8. Electron-doping of graphene-based devices by hydrazine

    SciTech Connect (OSTI)

    Feng, Tingting; Xie, Dan; Wang, Dongxia; Wen, Lang; Wu, Mengqiang

    2014-12-14

    A facile and effective technique to tune the electronic properties of graphene is essential to facilitate the flexibility of graphene-based device performances. Here, the use of hydrazine as a solution-processable and effective n-type dopant for graphene is described. By dropping hydrazine solutions at different concentrations on a graphene surface, the Dirac point of graphene can be remarkably tuned. The transport behavior of graphene can be changed from p-type to n-type accordingly, demonstrating the controllable and adjustable doping effect of the hydrazine solutions. Accompanying the Dirac point shift is an enhanced hysteretic behavior of the graphene conductance, indicating an increasing trap state density induced by the hydrazine adsorbates. The electron-doping of graphene by the hydrazine solutions can be additionally confirmed with graphene/p-type silicon heterojunctions. The decrease of the junction current after the hydrazine treatment demonstrates an increase of the junction barrier between graphene and silicon, which is essentially due to the electron-doping of graphene and the resultant upshift of the Fermi level. Finally, partially doped graphene is realized and its electrical property is studied to demonstrate the potential of the hydrazine solutions to selectively electron-doping graphene for future electronic applications.

  9. Vacuum thermal evaporation of polyaniline doped with camphor sulfonic acid

    SciTech Connect (OSTI)

    Boyne, Devon; Menegazzo, Nicola; Pupillo, Rachel C.; Rosenthal, Joel; Booksh, Karl S.

    2015-05-15

    Intrinsically conducting polymers belong to a class of organic polymers with intriguing electronic and physical properties specifically for electro-optical applications. Significant interest into doped polyaniline (PAni) can be attributed to its high conductivity and environmental stability. Poor dissolution in most solvents has thus far hindered the successful integration of PAni into commercial applications, which in turn, has led to the investigations of various deposition and acidic doping methods. Physical vapor deposition methods, including D.C. magnetron sputtering and vacuum thermal evaporation, have shown exceptional control over physical film properties (thickness and morphology). However, resulting films are less conductive than films deposited by conventional methods (i.e., spin and drop casting) due to interruption of the hyperconjugation of polymer chains. Specifically, vacuum thermal evaporation requires a postdoping process, which results in incorporation of impurities and oxidation of surface moieties. In this contribution, thermally evaporated films, sequentially doped by vacuum evaporation of an organic acid (camphorsulfonic acid, CSA) is explored. Spectroscopic evidence confirms the successful doping of PAni with CSA while physical characterization (atomic force microscopy) suggests films retain good morphology and are not damaged by the doping process. The procedure presented herein also combines other postpreparation methods in an attempt to improve conductivity and/or substrate adhesion.

  10. Engineering shallow spins in diamond with nitrogen delta-doping (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Engineering shallow spins in diamond with nitrogen delta-doping Citation Details In-Document Search Title: Engineering shallow spins in diamond with nitrogen delta-doping We demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-doping technique during plasma-enhanced chemical vapor deposition. Despite their proximity to the surface, doped NV centers with depths

  11. Two dimensional electron transport in modulation-doped In{sub...

    Office of Scientific and Technical Information (OSTI)

    of Publication: United States Language: English Subject: 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; ANTIMONIDES; COMPARATIVE EVALUATIONS; DOPED MATERIALS;...

  12. Excellent Passivation and Low Reflectivity Al2O3/TiO2 Bilayer Coatings for n-Wafer Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Lee, B. G.; Skarp, J.; Malinen, V.; Li, S.; Choi, S.; Branz, H. M.

    2012-06-01

    A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitated back contact p-wafer cells. We achieve high minority carrier lifetimes {approx}1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating.

  13. Tunable bilayer two-dimensional electron gas in LaAlO{sub 3}/SrTiO{sub 3} superlattices

    SciTech Connect (OSTI)

    Ma, H. J. Harsan E-mail: phyarian@nus.edu.sg; Annadi, A.; Zeng, S. W.; Ariando E-mail: phyarian@nus.edu.sg; Huang, Z.; L, W. M.; Wong, L. M.; Wang, S. J.; Venkatesan, T.

    2014-07-07

    We report magnetotransport properties of double heterointerfaces in LaAlO{sub 3}/SrTiO{sub 3}/LaAlO{sub 3}/SrTiO{sub 3}(001) (LAO/STO/LAO/STO). A strong nonlinearity in the Hall resistivity is found when the temperature is below 80?K. This effect is attributed to multichannel conduction of interfacial charges generated in double heterostructures of LAO/STO where two-dimensional electron gas (2DEG) is produced. The multichannel conduction is confirmed by back gating modulation of Hall effect. Our result suggests the possibility to achieve coupled bilayer 2DEG layers in LAO/STO superlattices.

  14. The Synthesis of Ag-Doped Mesoporous TiO2

    SciTech Connect (OSTI)

    Li, Xiaohong S.; Fryxell, Glen E.; Wang, Chong M.; Engelhard, Mark H.

    2008-04-15

    Ag-doped mesoporous titanium oxide was prepared using non-ionic surfactants and easily handled titanium precursors, under mild reaction conditions. In contrast to the stabilizing effect of Cd-doping on mesoporous TiO2, Ag-doping was found to significantly destabilize the mesoporous structure.

  15. Effect of Doping on Surface Reactivity and Conduction Mechanism in Sm-doped CeO2 Thin Films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Nan; Belianinov, Alex; Strelcov, Evgheni; Tebano, Antonello; Daniele, Dr. Di Castro; Schlueter, Dr. Christoph; Lee, Dr. Tien-Lin; Baddorf, Arthur P; Wisinger, Nina; Jesse, Stephen; et al

    2014-01-01

    Scanning probe microscopy measurements show irreversible surface electrochemistry in Sm-doped CeO2 thin films, which depends on humidity, temperature and doping concentration. A systematic study by electrochemical strain microscopy (ESM) in samples with two different Sm content and in several working conditions allows disclosing the microscopic mechanism underlying the difference in water adsorption and splitting with subsequent proton liberation. We measure the behavior of the hysteresis loops by changing temperature and humidity, both in standard ESM configuration and using the first order reversal curve (FORC) method. Complementing our study with spectroscopic measurements by hard x-ray photoemission spectroscopy we find that watermore » incorporation is favored until the doping with Sm is too high to allow the presence of Ce3+. The influence of doping on the surface reactivity and conduction mechanism clearly emerges from all of our experimental results. We find that at lower Sm concentration proton conduction is prevalent, featured by lower activation energy and higher mobility. Defect concentrations determine the type of the prevalent charge carrier in a doping dependent manner.« less

  16. Doping-assisted defect control in compound semiconductors

    DOE Patents [OSTI]

    Specht, Petra; Weber, Eicke R.; Weatherford, Todd Russell

    2006-07-11

    The present invention relates to the production of thin film epilayers of IIIV and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other IIIV materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.

  17. Doping-assisted defect control in compound semiconductors

    DOE Patents [OSTI]

    Specht, Petra; Weber, Eicke R.; Weatherford, Todd Russell

    2006-07-11

    The present invention relates to the production of thin film epilayers of III–V and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other III–V materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.

  18. Stable doping of carbon nanotubes via molecular self assembly

    SciTech Connect (OSTI)

    Lee, B.; Chen, Y.; Podzorov, V.; Cook, A.; Zakhidov, A.

    2014-10-14

    We report a novel method for stable doping of carbon nanotubes (CNT) based on methods of molecular self assembly. A conformal growth of a self-assembled monolayer of fluoroalkyl trichloro-silane (FTS) at CNT surfaces results in a strong increase of the sheet conductivity of CNT electrodes by 60–300%, depending on the CNT chirality and composition. The charge carrier mobility of undoped partially aligned CNT films was independently estimated in a field-effect transistor geometry (~100 cm²V⁻¹s⁻¹). The hole density induced by the FTS monolayer in CNT sheets is estimated to be ~1.8 ×10¹⁴cm⁻². We also show that FTS doping of CNT anodes greatly improves the performance of organic solar cells. This large and stable doping effect, easily achieved in large-area samples, makes this approach very attractive for applications of CNTs in transparent and flexible electronics.

  19. Doping of carbon foams for use in energy storage devices

    DOE Patents [OSTI]

    Mayer, S.T.; Pekala, R.W.; Morrison, R.L.; Kaschmitter, J.L.

    1994-10-25

    A polymeric foam precursor, wetted with phosphoric acid, is pyrolyzed in an inert atmosphere to produce an open-cell doped carbon foam, which is utilized as a lithium intercalation anode in a secondary, organic electrolyte battery. Tests were conducted in a cell containing an organic electrolyte and using lithium metal counter and reference electrodes, with the anode located there between. Results after charge and discharge cycling, for a total of 6 cycles, indicated a substantial increase in the energy storage capability of the phosphorus doped carbon foam relative to the undoped carbon foam, when used as a rechargeable lithium ion battery. 3 figs.

  20. Engineering shallow spins in diamond with nitrogen delta-doping

    SciTech Connect (OSTI)

    Ohno, Kenichi; Joseph Heremans, F.; Bassett, Lee C.; Myers, Bryan A.; Toyli, David M.; Bleszynski Jayich, Ania C.; Palmstrom, Christopher J.; Awschalom, David D.

    2012-08-20

    We demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-doping technique during plasma-enhanced chemical vapor deposition. Despite their proximity to the surface, doped NV centers with depths (d) ranging from 5 to 100 nm display long spin coherence times, T{sub 2} > 100 {mu}s at d = 5 nm and T{sub 2} > 600 {mu}s at d {>=} 50 nm. The consistently long spin coherence observed in such shallow NV centers enables applications such as atomic-scale external spin sensing and hybrid quantum architectures.

  1. Mechanism of Enhanced Carbon Cathode Performance by Nitrogen Doping in

    Office of Scientific and Technical Information (OSTI)

    Lithium¿Sulfur Battery: An X-ray Absorption Spectroscopic Study (Journal Article) | SciTech Connect Mechanism of Enhanced Carbon Cathode Performance by Nitrogen Doping in Lithium¿Sulfur Battery: An X-ray Absorption Spectroscopic Study Citation Details In-Document Search Title: Mechanism of Enhanced Carbon Cathode Performance by Nitrogen Doping in Lithium¿Sulfur Battery: An X-ray Absorption Spectroscopic Study Authors: Zhu, P. ; Song, J. ; Lv, D. ; Wang, D. ; Jaye, C. ; Fischer, D. ; Wu,

  2. Quasiparticle states around a nonmagnetic impurity in electron-doped

    Office of Scientific and Technical Information (OSTI)

    iron-based superconductors with spin-density-wave order (Journal Article) | SciTech Connect Quasiparticle states around a nonmagnetic impurity in electron-doped iron-based superconductors with spin-density-wave order Citation Details In-Document Search Title: Quasiparticle states around a nonmagnetic impurity in electron-doped iron-based superconductors with spin-density-wave order Authors: Zhou, Tao ; Huang, Huaixiang ; Gao, Yi ; Zhu, Jian-Xin ; Ting, C. S. Publication Date: 2011-06-01 OSTI

  3. Doping of carbon foams for use in energy storage devices

    DOE Patents [OSTI]

    Mayer, Steven T. (San Leandro, CA); Pekala, Richard W. (Pleasant Hill, CA); Morrison, Robert L. (Modesto, CA); Kaschmitter, James L. (Pleasanton, CA)

    1994-01-01

    A polymeric foam precursor, wetted with phosphoric acid, is pyrolyzed in an inert atmosphere to produce an open-cell doped carbon foam, which is utilized as a lithium intercalation anode in a secondary, organic electrolyte battery. Tests were conducted in a cell containing an organic electrolyte and using lithium metal counter and reference electrodes, with the anode located therebetween. Results after charge and discharge cycling, for a total of 6 cycles, indicated a substantial increase in the energy storage capability of the phosphorus doped carbon foam relative to the undoped carbon foam, when used as a rechargeable lithium ion battery.

  4. Single-poly EEPROM cell with lightly doped MOS capacitors

    DOE Patents [OSTI]

    Riekels, James E.; Lucking, Thomas B.; Larsen, Bradley J.; Gardner, Gary R.

    2008-05-27

    An Electrically Erasable Programmable Read Only Memory (EEPROM) memory cell and a method of operation are disclosed for creating an EEPROM memory cell in a standard CMOS process. A single polysilicon layer is used in combination with lightly doped MOS capacitors. The lightly doped capacitors employed in the EEPROM memory cell can be asymmetrical in design. Asymmetrical capacitors reduce area. Further capacitance variation caused by inversion can also be reduced by using multiple control capacitors. In addition, the use of multiple tunneling capacitors provides the benefit of customized tunneling paths.

  5. Unified description of superconducting pairing symmetry in electron-doped

    Office of Scientific and Technical Information (OSTI)

    Fe-based-122 compounds (Journal Article) | SciTech Connect Unified description of superconducting pairing symmetry in electron-doped Fe-based-122 compounds Citation Details In-Document Search This content will become publicly available on June 25, 2016 Title: Unified description of superconducting pairing symmetry in electron-doped Fe-based-122 compounds Authors: Li, Bo ; Pan, Lihua ; Tai, Yuan-Yen ; Graf, Matthias J. ; Zhu, Jian-Xin ; Bassler, Kevin E. ; Ting, C. S. Publication Date:

  6. Effect of Antimicrobial Peptide on Dynamics of Phosphocholine Membrane. Role of Cholesterol and Physical State of Bilayer

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sharma, Veerendra K; Mamontov, Eugene; Anunciado, Divina B; O'Neill, Hugh Michael; Urban, Volker S

    2015-06-24

    Antimicrobial peptides are universal in all forms of life and are well known for their strong interaction with the cell membrane. This makes them a popular target for investigation of peptide-lipid interactions. Here we report the effect of melittin, an important antimicrobial peptide, on the dynamics of membranes based on 1,2-dimyristoyl-sn-glycero-3-phosphocholine (DMPC) lipid in both the solid gel and fluid phases. To probe the phase transition, elastic neutron intensity temperature scans have been carried out on DMPC-based unilamellar vesicles (ULV) with and without melittin. We have found that addition of a small amount (0.2 mol%) melittin eliminates the steep fallmore » in the elastic intensity at 296 K associated with the solid gel to fluid phase transition, which is observed for pure DMPC vesicles. Quasielastic neutron scattering (QENS) experiments have been carried out on DMPC ULV in the solid gel and fluid phases with and without 0.2 mol % melittin. The data analysis invariably shows the presence of lateral and internal motions of the DMPC molecule. We found that melittin does have a profound effect on the dynamics of lipid molecules, especially on the lateral motion, and affects it in a different way, depending on the phase of the bilayers. In the solid gel phase, it acts as a plasticizer, enhancing the lateral motion of DMPC. However, in the fluid phase it acts as a stiffening agent, restricting the lateral motion of the lipid molecules. These observations are consistent with the mean squared displacements extracted from the elastic intensity temperature scans. Cholesterol is a vital component of eukaryotic membrane, which is a natural target for melittin. To investigate the effect of melittin on vesicles supplemented with cholesterol, QENS experiments have also been carried out on DMPC ULV with 20 mol% cholesterol in the presence and absence of 0.2 mol% melittin. Remarkably, the effects of melittin on the membrane dynamics disappear in the presence of 20 mol % cholesterol. Thus, our measurements indicate that the destabilizing effect of the peptide melittin on membranes can be mitigated by the presence of cholesterol.« less

  7. Effect of Antimicrobial Peptide on Dynamics of Phosphocholine Membrane: Role of Cholesterol and Physical State of Bilayer

    SciTech Connect (OSTI)

    Sharma, Veerendra K [ORNL; Mamontov, Eugene [ORNL; Anunciado, Divina B [ORNL; O'Neill, Hugh Michael [ORNL; Urban, Volker S [ORNL

    2015-01-01

    Antimicrobial peptides are universal in all forms of life and are well known for their strong interaction with the cell membrane. This makes them a popular target for investigation of peptide-lipid interactions. Here we report the effect of melittin, an important antimicrobial peptide, on the dynamics of membranes based on 1,2-dimyristoyl-sn-glycero-3-phosphocholine (DMPC) lipid in both the solid gel and fluid phases. To probe the phase transition, elastic neutron intensity temperature scans have been carried out on DMPC-based unilamellar vesicles (ULV) with and without melittin. We have found that addition of a small amount (0.2 mol%) melittin eliminates the steep fall in the elastic intensity at 296 K associated with the solid gel to fluid phase transition, which is observed for pure DMPC vesicles. Quasielastic neutron scattering (QENS) experiments have been carried out on DMPC ULV in the solid gel and fluid phases with and without 0.2 mol % melittin. The data analysis invariably shows the presence of lateral and internal motions of the DMPC molecule. We found that melittin does have a profound effect on the dynamics of lipid molecules, especially on the lateral motion, and affects it in a different way, depending on the phase of the bilayers. In the solid gel phase, it acts as a plasticizer, enhancing the lateral motion of DMPC. However, in the fluid phase it acts as a stiffening agent, restricting the lateral motion of the lipid molecules. These observations are consistent with the mean squared displacements extracted from the elastic intensity temperature scans. Cholesterol is a vital component of eukaryotic membrane, which is a natural target for melittin. To investigate the effect of melittin on vesicles supplemented with cholesterol, QENS experiments have also been carried out on DMPC ULV with 20 mol% cholesterol in the presence and absence of 0.2 mol% melittin. Remarkably, the effects of melittin on the membrane dynamics disappear in the presence of 20 mol % cholesterol. Thus, our measurements indicate that the destabilizing effect of the peptide melittin on membranes can be mitigated by the presence of cholesterol.

  8. Boron-doped back-surface fields using an aluminum-alloy process

    SciTech Connect (OSTI)

    Gee, J.M.; Bode, M.D.; Silva, B.L.

    1997-10-01

    Boron-doped back-surface fields (BSF`s) have potentially superior performance compared to aluminum-doped BSF`s due to the higher solid solubility of boron compared to aluminum. However, conventional boron diffusions require a long, high temperature step that is both costly and incompatible with many photovoltaic-grade crystalline-silicon materials. We examined a process that uses a relatively low-temperature aluminum-alloy process to obtain a boron-doped BSF by doping the aluminum with boron. In agreement with theoretical expectations, we found that thicker aluminum layers and higher boron doping levels improved the performance of aluminum-alloyed BSF`s.

  9. Suppression of the spin pumping in Pd/Ni{sub 81}Fe{sub 19} bilayers with nano-oxide layer

    SciTech Connect (OSTI)

    Kim, Duck-Ho; Kim, Hong-Hyoun; You, Chun-Yeol

    2011-08-15

    We demonstrate that the spin pumping effect can be effectively suppressed with a nano-oxide layer. Spin pumping effect manifests itself by an enhancement of the Gilbert damping parameter in normal metal/ferromagnetic hetero-structures, while many spintronics devices prefer smaller damping parameter. Since the spin pumping effect is directly related with the spin dependent interface conductance, we can modify the spin pumping by altering the interface conductance with the nano-oxide layer. We prepared series of Pd/Ni{sub 81}Fe{sub 19} bilayers with different pausing time between Pd and Ni{sub 81}Fe{sub 19} depositions in order to control the interface conductance. The Gilbert damping parameters are determined from the line-width measurements in the ferromagnetic resonance spectra for each pausing time sample. They are 0.0490, 0.0296, 0.0278, and 0.0251 for 0, 6, 30, and 60 s pausing time, respectively. We find that the damping parameter of Pd/Ni{sub 81}Fe{sub 19} is almost recovered to one of the Cu/Ni{sub 81}Fe{sub 19} bilayer with 60 s pausing time, while the static magnetic properties are not noticeably changed.

  10. Tuning nucleation density of metal island with charge doping of graphene substrate

    SciTech Connect (OSTI)

    Ming, Wenmei; Liu, Feng

    2014-08-18

    We have demonstrated that the island nucleation in the initial stage of epitaxial thin film growth can be tuned by substrate surface charge doping. This charge effect was investigated using spin density functional theory calculation in Fe-deposition on graphene substrate as an example. It was found that hole-doping can noticeably increase both Fe-adatom diffusion barrier and Fe inter-adatom repulsion energy occurring at intermediate separation, whereas electron-doping can decrease Fe-adatom diffusion barrier but only slightly modify inter-adatom repulsion energy. Further kinetic Monte Carlo simulation showed that the nucleation island number density can be increased up to six times larger under hole-doping and can be decreased down to ten times smaller under electron doping than that without doping. Our findings indicate a route to tailor the growth morphology of magnetic metal nanostructure for spintronics and plasmonic applications via surface charge doping.

  11. Tunable, rare earth-doped solid state lasers

    DOE Patents [OSTI]

    Emmett, John L.; Jacobs, Ralph R.; Krupke, William F.; Weber, Marvin J.

    1980-01-01

    Laser apparatus comprising combinations of an excimer pump laser and a rare earth-doped solid matrix, utilizing the 5d-4f radiative transition in a rare earth ion to produce visible and ultra-violet laser radiation with high overall efficiency in selected cases and relatively long radiative lifetimes.

  12. High capacity nickel battery material doped with alkali metal cations

    DOE Patents [OSTI]

    Jackovitz, John F.; Pantier, Earl A.

    1982-05-18

    A high capacity battery material is made, consisting essentially of hydrated Ni(II) hydroxide, and about 5 wt. % to about 40 wt. % of Ni(IV) hydrated oxide interlayer doped with alkali metal cations selected from potassium, sodium and lithium cations.

  13. Method of making metal-doped organic foam products

    DOE Patents [OSTI]

    Rinde, James A.

    1981-01-01

    Organic foams having a low density and very small cell size and method for roducing same in either a metal-loaded or unloaded (nonmetal loaded) form are described. Metal-doped foams are produced by soaking a polymer gel in an aqueous solution of desired metal salt, soaking the gel successively in a solvent series of decreasing polarity to remove water from the gel and replace it with a solvent of lower polarity with each successive solvent in the series being miscible with the solvents on each side and being saturated with the desired metal salt, and removing the last of the solvents from the gel to produce the desired metal-doped foam having desired density cell size, and metal loading. The unloaded or metal-doped foams can be utilized in a variety of applications requiring low density, small cell size foam. For example, rubidium-doped foam made in accordance with the invention has utility in special applications, such as in x-ray lasers.

  14. Chemical vapor deposition of fluorine-doped zinc oxide

    DOE Patents [OSTI]

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  15. Process for fabricating doped zinc oxide microsphere gel

    DOE Patents [OSTI]

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1991-11-05

    Disclosed are a new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  16. Process for fabricating doped zinc oxide microsphere gel

    DOE Patents [OSTI]

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1991-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  17. Spin-phonon coupling in scandium doped gallium ferrite

    SciTech Connect (OSTI)

    Chakraborty, Keka R. E-mail: smyusuf@barc.gov.in; Mukadam, M. D.; Basu, S.; Yusuf, S. M. E-mail: smyusuf@barc.gov.in; Paul, Barnita; Roy, Anushree; Grover, Vinita; Tyagi, A. K.

    2015-03-28

    We embarked on a study of Scandium (Sc) doped (onto Ga site) gallium ferrite (GaFeO{sub 3}) and found remarkable magnetic properties. In both doped as well as parent compounds, there were three types of Fe{sup 3+} ions (depending on the symmetry) with the structure conforming to space group Pna2{sub 1} (Sp. Grp. No. 33) below room temperature down to 5?K. We also found that all Fe{sup 3+} ions occupy octahedral sites, and carry high spin moment. For the higher Sc substituted sample (Ga{sub 1?x}Sc{sub x}FeO{sub 3}: x?=?0.3), a canted magnetic ordered state is found. Spin-phonon coupling below Nel temperature was observed in doped compounds. Our results indicated that Sc doping in octahedral site modifies spin-phonon interactions of the parent compound. The spin-phonon coupling strength was estimated for the first time in these Sc substituted compounds.

  18. Chemical Doping Enhances Electronic Transport in Networks of

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hexabenzocoronenes Assembles in Electrolyte - Joint Center for Energy Storage Research June 12, 2015, Research Highlights Chemical Doping Enhances Electronic Transport in Networks of Hexabenzocoronenes Assembles in Electrolyte (Top) HBCs assemble into nanowires and are chemically oxidized (Bottom Left) Changing UV-vis spectra with temperature indicates assembly (Bottom Right) Increased shuttling current with increased oxidation Scientific Achievement Organic semiconductors provide

  19. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    DOE Patents [OSTI]

    Ren, Zhifeng; Chen, Gang; Poudel, Bed; Kumar, Shankar; Wang, Wenzhong; Dresselhaus, Mildred

    2009-09-08

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  20. Red-emitting manganese-doped aluminum nitride phosphor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cherepy, Nerine J.; Payne, Stephen A.; Harvey, Nicholas M.; Aberg, Daniel; Seeley, Zachary M.; Holliday, Kiel S.; Tran, Ich C.; Zhou, Fei; Martinez, H. Paul; Demeyer, Jessica M.; et al

    2016-02-10

    Here, we report high efficiency luminescence with a manganese-doped aluminum nitride red-emitting phosphor under 254 nm excitation, as well as its excellent lumen maintenance in fluorescent lamp conditions, making it a candidate replacement for the widely deployed europium-doped yttria red phosphor. Solid-state reaction of aluminum nitride powders with manganese metal at 1900 °C, 10 atm N2 in a reducing environment results in nitrogen deficiency, as revealed diffuse reflectance spectra. When these powders are subsequently annealed in flowing nitrogen at 1650 °C, higher nitrogen content is recovered, resulting in white powders. Silicon was added to samples as an oxygen getter tomore » improve emission efficiency. NEXAFS spectra and DFT calculations indicate that the Mn dopant is divalent. From DFT calculations, the UV absorption band is proposed to be due to an aluminum vacancy coupled with oxygen impurity dopants, and Mn2+ is assumed to be closely associated with this site. In contrast with some previous reports, we find that the highest quantum efficiency with 254 nm excitation (Q.E. = 0.86 ± 0.14) is obtained in aluminum nitride with a low manganese doping level of 0.06 mol.%. The principal Mn2+ decay of 1.25 ms is assigned to non-interacting Mn sites, while additional components in the microsecond range appear with higher Mn doping, consistent with Mn clustering and resultant exchange coupling. Slower components are present in samples with low Mn doping, as well as strong afterglow, assigned to trapping on shallow traps followed by detrapping and subsequent trapping on Mn.« less

  1. Macro- and microscopic properties of strontium doped indium oxide

    SciTech Connect (OSTI)

    Nikolaenko, Y. M.; Kuzovlev, Y. E.; Medvedev, Y. V.; Mezin, N. I.; Fasel, C.; Gurlo, A.; Schlicker, L.; Bayer, T. J. M.; Genenko, Y. A.

    2014-07-28

    Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In{sub 2}O{sub 3}:(SrO){sub x} were investigated for materials with different doping levels at different temperatures (T?=?20300?C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x?=?10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn{sub 2}O{sub 4}. An unusual property of high level (x?=?10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100200?C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3??10{sup ?13}?cm{sup 2}/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

  2. Spectral shape deformation in inverse spin Hall voltage in Y{sub 3}Fe{sub 5}O{sub 12}|Pt bilayers at high microwave power levels

    SciTech Connect (OSTI)

    Lustikova, J. Shiomi, Y.; Handa, Y.; Saitoh, E.

    2015-02-21

    We report on the deformation of microwave absorption spectra and of the inverse spin Hall voltage signals in thin film bilayers of yttrium iron garnet (YIG) and platinum at high microwave power levels in a 9.45-GHz TE{sub 011} cavity. As the microwave power increases from 0.15 to 200 mW, the resonance field shifts to higher values, and the initially Lorentzian spectra of the microwave absorption intensity as well as the inverse spin Hall voltage signals become asymmetric. The contributions from opening of the magnetization precession cone and heating of YIG cannot well reproduce the data. Control measurements of inverse spin Hall voltages on thin-film YIG|Pt systems with a range of line widths underscore the role of spin-wave excitations in spectral deformation.

  3. Clarification of enhanced ferromagnetism in Be-codoped InMnP fabricated using Mn/InP:Be bilayers grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Shon, Yoon; Lee, Sejoon; Taek Yoon, Im; Jeon, H. C.; Lee, D. J.; Kang, T. W.; Song, J. D.; Yoon, Chong S.; Kim, D. Y.; Park, C. S.

    2011-11-07

    The p-type InMnP:Be epilayers were prepared by the sequential growth of Mn/InP:Be bilayers using molecular-beam-epitaxy and the subsequent in-situ annealing at 200-300 deg. C. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InMnP. The ferromagnetic transition in InMnP:Be was observed to occur at the elevated temperature of {approx}140 K, and the ferromagnetic spin-domains clearly appeared in magnetic force microscopy images. The improved ferromagnetic properties are attributed to the increased p-d hybridation due to high p-type conductivity of InMnP:Be (p {approx} 10{sup 20 }cm{sup -3}). The results suggest that enhanced ferromagnetism can be effectively obtained from Be-codoped InMnP.

  4. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    SciTech Connect (OSTI)

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L. Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-10-20

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30?T. The linear magnetoresistance slope ?R/?B is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  5. Control of work function of graphene by plasma assisted nitrogen doping

    SciTech Connect (OSTI)

    Akada, Keishi; Terasawa, Tomo-o; Imamura, Gaku; Obata, Seiji; Saiki, Koichiro, E-mail: saiki@k.u-tokyo.ac.jp [Department of Complexity Science and Engineering, The University of Tokyo, Kashiwanoha 5-1-5, Kashiwa, Chiba 277-8561 (Japan)

    2014-03-31

    Nitrogen doping is expected to provide several intriguing properties to graphene. Nitrogen plasma treatment to defect-free and defective highly oriented pyrolytic graphite (HOPG) samples causes doping of nitrogen atom into the graphene layer. Nitrogen atoms are initially doped at a graphitic site (inside the graphene) for the defect-free HOPG, while doping to a pyridinic or a pyrrolic site (edge of the graphene) is dominant for the defective HOPG. The work function of graphene correlates strongly with the site and amount of doped nitrogen. Nitrogen atoms doped at a graphitic site lower the work function, while nitrogen atoms at a pyridinic or a pyrrolic site increase the work function. Control of plasma treatment time and the amount of initial defect could change the work function of graphite from 4.3?eV to 5.4?eV, which would open a way to tailor the nature of graphene for various industrial applications.

  6. Polarization doping and the efficiency of III-nitride optoelectronic devices

    SciTech Connect (OSTI)

    Kivisaari, Pyry; Oksanen, Jani; Tulkki, Jukka

    2013-11-18

    The intrinsic polarization is generally considered a nuisance in III-nitride devices, but recent studies have shown that it can be used to enhance p- and n-type conductivity and even to replace impurity doping. We show by numerical simulations that polarization-doped light-emitting diode (LED) structures have a significant performance advantage over conventional impurity-doped LED structures. Our results indicate that polarization doping decreases electric fields inside the active region and potential barriers in the depletion region, as well as the magnitude of the quantum-confined Stark effect. The simulations also predict at least an order of magnitude increase in the current density corresponding to the maximum efficiency (i.e., smaller droop) as compared to impurity-doped structures. The obtained high doping concentrations could also enable, e.g., fabrication of III-N resonant tunneling diodes and improved ohmic contacts.

  7. Sub-ambient carbon dioxide adsorption properties of nitrogen doped graphene

    SciTech Connect (OSTI)

    Tamilarasan, P.; Ramaprabhu, Sundara

    2015-04-14

    Carbon dioxide adsorption on carbon surface can be enhanced by doping the surface with heterogeneous atoms, which can increase local surface affinity. This study presents the carbon dioxide adsorption properties of nitrogen doped graphene at low pressures (<100 kPa). Graphene was exposed to nitrogen plasma, which dopes nitrogen atoms into carbon hexagonal lattice, mainly in pyridinic and pyrrolic forms. It is found that nitrogen doping significantly improves the CO{sub 2} adsorption capacity at all temperatures, due to the enrichment of local Lewis basic sites. In general, isotherm and thermodynamic parameters suggest that doped nitrogen sites have nearly same adsorption energy of surface defects and residual functional groups. The isosteric heat of adsorption remains in physisorption range, which falls with surface coverage, suggesting the distribution of magnitude of adsorption energy. The absolute values of isosteric heat and entropy of adsorption are slightly increased upon nitrogen doping.

  8. Process for fabricating device structures for real-time process control of silicon doping

    DOE Patents [OSTI]

    Weiner, Kurt H.

    2001-01-01

    Silicon device structures designed to allow measurement of important doping process parameters immediately after the doping step has occurred. The test structures are processed through contact formation using standard semiconductor fabrication techniques. After the contacts have been formed, the structures are covered by an oxide layer and an aluminum layer. The aluminum layer is then patterned to expose the contact pads and selected regions of the silicon to be doped. Doping is then performed, and the whole structure is annealed with a pulsed excimer laser. But laser annealing, unlike standard annealing techniques, does not effect the aluminum contacts because the laser light is reflected by the aluminum. Once the annealing process is complete, the structures can be probed, using standard techniques, to ascertain data about the doping step. Analysis of the data can be used to determine probable yield reductions due to improper execution of the doping step and thus provide real-time feedback during integrated circuit fabrication.

  9. Ytterbium-doped borate fluoride laser crystals and lasers

    DOE Patents [OSTI]

    Schaffers, K.I.; DeLoach, L.D.; Payne, S.A.; Keszler, D.A.

    1997-10-14

    A new class of solid state laser crystals and lasers are formed from Yb-doped borate fluoride host crystals. The general formula for the host crystals is MM{prime}(BO{sub 3})F, where M, M{prime} are monovalent, divalent aria trivalent metal cations. A particular embodiment of the invention is Yb-doped BaCaBO{sub 3}F (Yb:BCBF). BCBF and some of the related derivative crystals are capable of nonlinear frequency conversion, whereby the fundamental of the laser is converted to a longer or shorter wavelength. In this way, these new crystals can simultaneously serve as self-frequency doubling crystals and laser materials within the laser resonator. 6 figs.

  10. Ytterbium-doped borate fluoride laser crystals and lasers

    DOE Patents [OSTI]

    Schaffers, Kathleen I.; DeLoach, Laura D.; Payne, Stephen A.; Keszler, Douglas A.

    1997-01-01

    A new class of solid state laser crystals and lasers are formed from Yb-doped borate fluoride host crystals. The general formula for the host crystals is MM'(BO.sub.3)F, where M, M' are monovalent, divalent aria trivalent metal cations. A particular embodiment of the invention is Yb-doped BaCaBO.sub.3 F (Yb:BCBF). BCBF and some of the related derivative crystals are capable of nonlinear frequency conversion, whereby the fundamental of the laser is converted to a longer or shorter wavelength. In this way, these new crystals can simultaneously serve as self-frequency doubling crystals and laser materials within the laser resonator.

  11. Imaging doped silicon test structures using low energy electron microscopy.

    SciTech Connect (OSTI)

    Nakakura, Craig Yoshimi; Anderson, Meredith Lynn; Kellogg, Gary Lee

    2010-01-01

    This document is the final SAND Report for the LDRD Project 105877 - 'Novel Diagnostic for Advanced Measurements of Semiconductor Devices Exposed to Adverse Environments' - funded through the Nanoscience to Microsystems investment area. Along with the continuous decrease in the feature size of semiconductor device structures comes a growing need for inspection tools with high spatial resolution and high sample throughput. Ideally, such tools should be able to characterize both the surface morphology and local conductivity associated with the structures. The imaging capabilities and wide availability of scanning electron microscopes (SEMs) make them an obvious choice for imaging device structures. Dopant contrast from pn junctions using secondary electrons in the SEM was first reported in 1967 and more recently starting in the mid-1990s. However, the serial acquisition process associated with scanning techniques places limits on the sample throughput. Significantly improved throughput is possible with the use of a parallel imaging scheme such as that found in photoelectron emission microscopy (PEEM) and low energy electron microscopy (LEEM). The application of PEEM and LEEM to device structures relies on contrast mechanisms that distinguish differences in dopant type and concentration. Interestingly, one of the first applications of PEEM was a study of the doping of semiconductors, which showed that the PEEM contrast was very sensitive to the doping level and that dopant concentrations as low as 10{sup 16} cm{sup -3} could be detected. More recent PEEM investigations of Schottky contacts were reported in the late 1990s by Giesen et al., followed by a series of papers in the early 2000s addressing doping contrast in PEEM by Ballarotto and co-workers and Frank and co-workers. In contrast to PEEM, comparatively little has been done to identify contrast mechanisms and assess the capabilities of LEEM for imaging semiconductor device strictures. The one exception is the work of Mankos et al., who evaluated the impact of high-throughput requirements on the LEEM designs and demonstrated new applications of imaging modes with a tilted electron beam. To assess its potential as a semiconductor device imaging tool and to identify contrast mechanisms, we used LEEM to investigate doped Si test structures. In section 2, Imaging Oxide-Covered Doped Si Structures Using LEEM, we show that the LEEM technique is able to provide reasonably high contrast images across lateral pn junctions. The observed contrast is attributed to a work function difference ({Delta}{phi}) between the p- and n-type regions. However, because the doped regions were buried under a thermal oxide ({approx}3.5 nm thick), e-beam charging during imaging prevented quantitative measurements of {Delta}{phi}. As part of this project, we also investigated a series of similar test structures in which the thermal oxide was removed by a chemical etch. With the oxide removed, we obtained intensity-versus-voltage (I-V) curves through the transition from mirror to LEEM mode and determined the relative positions of the vacuum cutoffs for the differently doped regions. Although the details are not discussed in this report, the relative position in voltage of the vacuum cutoffs are a direct measure of the work function difference ({Delta}{phi}) between the p- and n-doped regions.

  12. Direct visualization of atomically precise nitrogen-doped graphene nanoribbons

    SciTech Connect (OSTI)

    Zhang, Yi; Zhang, Yanfang; Li, Geng; Lu, Jianchen; Du, Shixuan, E-mail: sxdu@iphy.ac.cn, E-mail: feng@mpip-mainz.mpg.de; Gao, Hong-Jun [Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190 (China); Lin, Xiao [University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100049 (China); Berger, Reinhard; Feng, Xinliang, E-mail: sxdu@iphy.ac.cn, E-mail: feng@mpip-mainz.mpg.de; Mllen, Klaus [Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz (Germany)

    2014-07-14

    We have fabricated atomically precise nitrogen-doped chevron-type graphene nanoribbons by using the on-surface synthesis technique combined with the nitrogen substitution of the precursors. Scanning tunneling microscopy and spectroscopy indicate that the well-defined nanoribbons tend to align with the neighbors side-by-side with a band gap of 1.02?eV, which is in good agreement with the density functional theory calculation result. The influence of the high precursor coverage on the quality of the nanoribbons is also studied. We find that graphene nanoribbons with sufficient aspect ratios can only be fabricated at sub-monolayer precursor coverage. This work provides a way to construct atomically precise nitrogen-doped graphene nanoribbons.

  13. High gain photoconductive semiconductor switch having tailored doping profile zones

    DOE Patents [OSTI]

    Baca, Albert G.; Loubriel, Guillermo M.; Mar, Alan; Zutavern, Fred J; Hjalmarson, Harold P.; Allerman, Andrew A.; Zipperian, Thomas E.; O'Malley, Martin W.; Helgeson, Wesley D.; Denison, Gary J.; Brown, Darwin J.; Sullivan, Charles T.; Hou, Hong Q.

    2001-01-01

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  14. Method of fabricating optical waveguides by ion implantation doping

    DOE Patents [OSTI]

    Appleton, B.R.; Ashley, P.R.; Buchal, C.J.

    1987-03-24

    A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO/sub 3/ crystals are implanted with high concentrations of Ti dopant at ion energies of about 360 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000/degree/C produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguiding properties.

  15. Method of fabricating optical waveguides by ion implantation doping

    DOE Patents [OSTI]

    Appleton, Bill R.; Ashley, Paul R.; Buchal, Christopher J.

    1989-01-01

    A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.

  16. Optical Response of Shocked Cerium-Doped Lutetium Oxyorthosilicate

    SciTech Connect (OSTI)

    G. D. Stevens

    2003-03-01

    Shock experiments were performed in order to characterize the triboluminescent signature of cerium-doped lutetium oxyorthosilicate (LSO:Ce). This material shows prompt, nano-second timescale light emission when driven by explosive detonation. When properly applied to a surface, it may be used as a shock arrival sensor, and also for imaging the propagation of a shock front. Triboluminescent rise times, spectral content, and spatial resolution measurements are presented.

  17. Method for measuring the drift mobility in doped semiconductors

    DOE Patents [OSTI]

    Crandall, Richard S.

    1982-01-01

    A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.

  18. Method for measuring the drift mobility in doped semiconductors

    DOE Patents [OSTI]

    Crandall, R.S.

    1982-03-09

    A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.

  19. Non-aqueous solution preparation of doped and undoped lixmnyoz

    DOE Patents [OSTI]

    Boyle, Timothy J.; Voigt, James A.

    1997-01-01

    A method for generation of phase-pure doped and undoped Li.sub.x Mn.sub.y O.sub.z precursors. The method of this invention uses organic solutions instead of aqueous solutions or nonsolution ball milling of dry powders to produce phase-pure precursors. These precursors can be used as cathodes for lithium-polymer electrolyte batteries. Dopants may be homogeneously incorporated to alter the characteristics of the powder.

  20. Self-doped microphase separated block copolymer electrolyte

    DOE Patents [OSTI]

    Mayes, Anne M.; Sadoway, Donald R.; Banerjee, Pallab; Soo, Philip; Huang, Biying

    2002-01-01

    A polymer electrolyte includes a self-doped microphase separated block copolymer including at least one ionically conductive block and at least one second block that is immiscible in the ionically conductive block, an anion immobilized on the polymer electrolyte and a cationic species. The ionically conductive block provides a continuous ionically conductive pathway through the electrolyte. The electrolyte may be used as an electrolyte in an electrochemical cell.

  1. One-pot synthesis of highly mesoporous antimony-doped tin oxide from

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    interpenetrating inorganic/organic networks One-pot synthesis of highly mesoporous antimony-doped tin oxide from interpenetrating inorganic/organic networks Authors: Volosin, A.M., Sharma, S., Traverse, C., Newman, N., and Seo, D-K. Title: One-pot synthesis of highly mesoporous antimony-doped tin oxide from interpenetrating inorganic/organic networks Source: Journal of Materials Chemistry Year: 2011 Volume: 21 Pages: 13232-13240 ABSTRACT: Highly mesoporous antimony-doped tin oxide (ATO)

  2. Highly tunable magnetism in silicene doped with Cr and Fe atoms under

    Office of Scientific and Technical Information (OSTI)

    isotropic and uniaxial tensile strain (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Highly tunable magnetism in silicene doped with Cr and Fe atoms under isotropic and uniaxial tensile strain Citation Details In-Document Search Title: Highly tunable magnetism in silicene doped with Cr and Fe atoms under isotropic and uniaxial tensile strain We have investigated the magnetic properties of silicene doped with Cr and Fe atoms under isotropic and uniaxial

  3. Synthesis of mesoporous NiO doped TiO{sub 2} submicrosphere via spray hydrolysis

    SciTech Connect (OSTI)

    Bahadur, J.; Sen, D.; Prakash, J.; Singh, Ripandeep; Paul, B.; Mazumder, S.; Sathiyamoorthy, D.

    2012-06-05

    NiO doped TiO{sub 2} submicrosphere have been prepared via spray hydrolysis. The doping concentration has been varied form 2 wt% to 15 wt%. Morphology of the submicrospheres has been investigated using small-angle neutron scattering and scanning electron microscopy. Elemental analysis has been carried out by energy dispersive X-ray analysis which confirms the doping concentrations. The mesopores in submicrospheres possess cylindrical morphology.

  4. Tuning nucleation density of metal island with charge doping of graphene

    Office of Scientific and Technical Information (OSTI)

    substrate (Journal Article) | SciTech Connect Tuning nucleation density of metal island with charge doping of graphene substrate Citation Details In-Document Search Title: Tuning nucleation density of metal island with charge doping of graphene substrate We have demonstrated that the island nucleation in the initial stage of epitaxial thin film growth can be tuned by substrate surface charge doping. This charge effect was investigated using spin density functional theory calculation in

  5. Theory of nitrogen doping of carbon nanoribbons: Edge effects

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jiang, Jie; Turnbull, Joseph; Lu, Wenchang; Oak Ridge National Lab.; Boguslawski, Piotr; Univ. of Warsaw; Bernholc, J.; Oak Ridge National Lab.

    2012-01-01

    Nitrogen doping of a carbon nanoribbon is profoundly affected by its one-dimensional character, symmetry, and interaction with edge states. Using state-of-the-art ab initio calculations, including hybrid exact-exchange density functional theory, we find that, for N-doped zigzag ribbons, the electronic properties are strongly dependent upon sublattice effects due to the non-equivalence of the two sublattices. For armchair ribbons, N-doping effects are different depending upon the ribbon family: for families 2 and 0, the N-induced levels are in the conduction band, while for family 1 the N levels are in the gap. In zigzag nanoribbons, nitrogen close to the edge is amore » deep center, while in armchair nanoribbons its behavior is close to an effective-mass-like donor with the ionization energy dependent on the value of the band gap. In chiral nanoribbons, we find strong dependence of the impurity level and formation energy upon the edge position of the dopant, while such site-specificity is not manifested in the magnitude of the magnetization.« less

  6. Ca2+-Doped CeBr3 Scintillating Materials

    SciTech Connect (OSTI)

    Guss, Paul; Foster, Michael E.; Wong, Bryan M.; Doty, F. Patrick; Shah, Kanai; Squillante, Michael R.; Shirwadkar, Urmila; Hawrami, Rastgo; Tower, Josh; Yuan, Ding

    2014-01-21

    Despite the outstanding scintillation performance characteristics of cerium tribromide (CeBr3) and cerium-activated lanthanum tribromide, their commercial availability and application are limited due to the difficulties of growing large, crack-free single crystals from these fragile materials. This investigation employed aliovalent doping to increase crystal strength while maintaining the optical properties of the crystal. One divalent dopant (Ca2+) was used as a dopant to strengthen CeBr3 without negatively impacting scintillation performance. Ingots containing nominal concentrations of 1.9% of the Ca2+ dopant were grown. Preliminary scintillation measurements are presented for this aliovalently doped scintillator. Ca2+-doped CeBr3 exhibited little or no change in the peak fluorescence emission for 371 nm optical excitation for CeBr3. The structural, electronic, and optical properties of CeBr3 crystals were studied using the density functional theory within the generalized gradient approximation. The calculated lattice parameters are in good agreement with the experimental data. The energy band structures and density of states were obtained. The optical properties of CeBr3, including the dielectric function, were calculated.

  7. Controlled Co(II) Doping of Zinc Oxide Nanocrystals

    SciTech Connect (OSTI)

    S Bohle; C Spina

    2011-12-31

    Dopants are non-native atoms commonly used to modify the properties of bulk semiconductors. In this paper we demonstrate that by controlling the addition of cobalt(II) to growing zinc oxide nanocrystals (ZnO NCs) it is possible to modulate the resulting properties. We show that the environment of cobalt may be controlled by varying the synthetic conditions, mainly through varying the time of dopant-precursor addition and concentration. These conditions prove critical to the resulting Co(II) configuration, which affects both the luminescent and photocatalytic properties of the ZnO NCs. Presynthetic doping with 2% Co(II) results in a 98% quenching of the visible emission of ZnO, whereas the same quantity doped post synthesis results in only a 60% quenching. The environment of cobalt in the ZnO wurtzite lattice is identified through UV-vis spectroscopy. The wurtzite structure of the ZnO lattice for all nanocrystalline species is confirmed through X-ray diffraction patterns obtained from a synchrotron radiation source. Postsynthetically doped Co(II) in ZnO NC is demonstrated to have potential applications as an 'on-off' sensor, as exemplified with nitric oxide.

  8. Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen

    DOE Patents [OSTI]

    Compaan, Alvin D.; Price, Kent J.; Ma, Xianda; Makhratchev, Konstantin

    2005-02-08

    A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.

  9. SU-8 doped and encapsulated n-type graphene nanomesh with high air stability

    SciTech Connect (OSTI)

    Al-Mumen, Haider [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States) [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States); Department of Electrical Engineering, University of Babylon, Babylon (Iraq); Dong, Lixin; Li, Wen, E-mail: wenli@egr.msu.edu [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)] [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)

    2013-12-02

    N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.

  10. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    DOE Patents [OSTI]

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  11. Tunable topological states in electron-doped HTT-Pt (Journal...

    Office of Scientific and Technical Information (OSTI)

    This content will become publicly available on April 1, 2017 Title: Tunable topological states in electron-doped HTT-Pt Authors: Zhang, Xiaoming ; Wang, Zhenhai ; Zhao, Mingwen ; ...

  12. Doping-induced strain and relaxation of Al-doped 4H-SiC homoepitaxial layers

    SciTech Connect (OSTI)

    Huh, S.W.; Chung, H.J.; Benamara, M.; Skowronski, M.; Sumakeris, J.J.; Paisley, M.J.

    2004-10-15

    Aluminum-doped 4H-SiC epilayers with Al concentrations in the 7.4x10{sup 18}-3.8x10{sup 20} cm{sup -3} range were deposited on off-orientation (0001) wafers by chemical vapor deposition method and analyzed using high-resolution x-ray diffraction, transmission electron microscopy, and KOH etching. Reciprocal space maps of (0008) reflection revealed two distinct peaks originating from the substrate and doped epilayer. For Al concentration below 3.3x10{sup 20} cm{sup -3}, 10 {mu}m thick layers were fully strained with the a-lattice parameter of the layer matching that of the substrate. The equilibrium c-lattice parameter change versus doping was determined to be 1.3{+-}0.3x10{sup -24} cm{sup 3}. The basal planes of the epilayers were tilted in respect to the substrate in the direction of the offcut with the tilt magnitude proportional to the doping concentration. The 10 {mu}m thick layers with Al concentration above 3.3x10{sup 20} cm{sup -3} underwent partial relaxation. The a-lattice parameter of the epilayer was higher than that of the substrate, the width of {omega} and 2{theta} scans of (0008) x-ray peaks broadened by a factor of 2 compared to strained layers, and the threading dislocation density increased by several orders of magnitude. Since no inclusions have been found in the relaxed epilayer, we interpret the above changes as due to strain relaxation by nucleation of dislocations.

  13. Electronic structures and magnetic stabilities of 2D Mn-doped GaAs nanosheets: The role of long-range exchange interactions and doping strategies

    SciTech Connect (OSTI)

    Lan, Mu; Xiang, Gang Zhang, Xi

    2014-08-28

    We investigate the structural, electronic and magnetic properties of Mn atoms doped two-dimensional (2D) hexagonal GaAs nanosheets (GaAsNSs) using both first-principle calculations and Monte Carlo simulations. The first-principle molecular dynamics is first used to test the structural stability of Mn-doped GaAsNS ((Ga,Mn)AsNS). The analysis of spin-resolved electronic structures and determination of magnetic exchange interactions based on density functional theory (DFT) calculations reveals the existence of long-range exchange interaction in the system. Finally, Metropolis Monte Carlo simulation is employed to estimate Curie temperatures (T{sub C}s) of (Ga,Mn)AsNSs with different doping concentrations by different doping strategies. The results indicate that a T{sub C} up to 82 K can be obtained in regularly-doped (Ga,Mn)AsNSs and doping strategies have prominent impact on T{sub C}s of the systems, which emphasizes the importance of both long-range interactions and doping strategies in reduced dimensional diluted magnetic semiconductors (DMSs)

  14. Electrically actuatable doped polymer flakes and electrically addressable optical devices using suspensions of doped polymer flakes in a fluid host

    DOE Patents [OSTI]

    Trajkovska-Petkoska, Anka; Jacobs, Stephen D.; Marshall, Kenneth L.; Kosc, Tanya Z.

    2010-05-11

    Doped electrically actuatable (electrically addressable or switchable) polymer flakes have enhanced and controllable electric field induced motion by virtue of doping a polymer material that functions as the base flake matrix with either a distribution of insoluble dopant particles or a dopant material that is completely soluble in the base flake matrix. The base flake matrix may be a polymer liquid crystal material, and the dopants generally have higher dielectric permittivity and/or conductivity than the electrically actuatable polymer base flake matrix. The dopant distribution within the base flake matrix may be either homogeneous or non-homogeneous. In the latter case, the non-homogeneous distribution of dopant provides a dielectric permittivity and/or conductivity gradient within the body of the flakes. The dopant can also be a carbon-containing material (either soluble or insoluble in the base flake matrix) that absorbs light so as to reduce the unpolarized scattered light component reflected from the flakes, thereby enhancing the effective intensity of circularly polarized light reflected from the flakes when the flakes are oriented into a light reflecting state. Electro-optic devices contain these doped flakes suspended in a host fluid can be addressed with an applied electric field, thus controlling the orientation of the flakes between a bright reflecting state and a non-reflecting dark state.

  15. Divalent Europium Doped and Un-doped Calcium Iodide Scintillators: Scintillator Characterization and Single Crystal Growth

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Boatner, Lynn A; Ramey, Joanne Oxendine; Kolopus, James A; Neal, John S

    2015-01-01

    The alkaline-earth scintillator, CaI2:Eu2+, was initially discovered around 1964 by Hofstadter, Odell, and Schmidt. Serious practical problems quickly arose, however, that were associated with the growth of large monolithic single crystals of this material due to its lamellar, mica-like structure. As a result of its theoretically higher light yield, CaI2:Eu2+ has the potential to exceed the excellent scintillation performance of SrI2:Eu2+. In fact, theoretical predictions for the light yield of CaI2:Eu2+ scintillators suggested that an energy resolution approaching 2% at 662 keV could be achievable. As in the case of the early SrI2:Eu2+ scintillator, the performance of CaI2:Eu2+ scintillators hasmore » traditionally suffered due, at least in part, to outdated materials synthesis, component stoichiometry/purity, and single-crystal-growth techniques. Based on our recent work on SrI2:Eu2+ scintillators in single-crystal form, we have developed new techniques that are applied here to CaI2:Eu2+ and pure CaI2 with the goal of growing large un-cracked crystals and, potentially, realizing the theoretically predicted performance of the CaI2:Eu2+ form of this material. Calcium iodide does not adhere to modern glassy carbon Bridgman crucibles - so there should be no differential thermal-contraction-induced crystal/crucible stresses on cooling that would result in crystal cracking of the lamellar structure of CaI2. Here we apply glassy carbon crucible Bridgman growth, high-purity growth-charge compounds, our molten salt processing/filtration technique, and extended vacuum-melt-pumping methods to the growth of both CaI2:Eu2+ and un-doped CaI2. Large scintillating single crystals were obtained, and detailed characterization studies of the scintillation properties of CaI2:Eu2+ and pure CaI2 single crystals are presented that include studies of the effects of plastic deformation of the crystals on the scintillator performance.« less

  16. Sonochemical synthesis and photocatalytic property of zinc oxide nanoparticles doped with magnesium(II)

    SciTech Connect (OSTI)

    Lu, Xianyong; Liu, Zhaoyue; Zhu, Ying; Jiang, Lei; Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190

    2011-10-15

    Highlights: {yields} Mg-doped ZnO nanoparticles were synthesized by sonochemical strategy. {yields} Mg-doped ZnO nanoparticles present good photocatalytic properties. {yields} The change of band gap contributes to their high efficiency in photocatalyst. -- Abstract: Mg-doped ZnO nanoparticles were successfully synthesized by sonochemical method. The products were characterized by scan electron microscopy (SEM) and X-ray powder diffraction (XRD). SEM images revealed that ZnO doped with Mg(II) nanoparticles and ZnO nanoparticles synthesized by the same strategy all had spherical topography. XRD patterns showed that the doped nanoparticles had the same crystals structures as the pure ZnO nanoparticles. The Mg-doped ZnO nanoparticles had larger lattice volume than the un-doped nanoparticles. X-ray photoelectron spectroscopy (XPS) not only demonstrated the moral ratio of Mg and Zn element on the surface of nanoparticles, but their valence in nanoparticles as well. The Mg-doped ZnO nanoparticles presented good properties in photocatalyst compared with pure ZnO nanoparticles.

  17. Band-gap tailoring of ZnO by means of heavy Al doping

    SciTech Connect (OSTI)

    Sernelius, B.E.; Berggren, K.; Jin, Z.; Hamberg, I.; Granqvist, C.G.

    1988-06-15

    Films of ZnO:Al were produced by weakly reactive dual-target magnetron sputtering. Optical band gaps, evaluated from spectrophotometric data, were widened in proportion to the Al doping. The widening could be quantitatively reconciled with an effective-mass model for n-doped semiconductors, provided the polar character of ZnO was accounted for.

  18. Doped carbon-sulfur species nanocomposite cathode for Li--S batteries

    DOE Patents [OSTI]

    Wang, Donghai; Xu, Tianren; Song, Jiangxuan

    2015-12-29

    We report a heteroatom-doped carbon framework that acts both as conductive network and polysulfide immobilizer for lithium-sulfur cathodes. The doped carbon forms chemical bonding with elemental sulfur and/or sulfur compound. This can significantly inhibit the diffusion of lithium polysulfides in the electrolyte, leading to high capacity retention and high coulombic efficiency.

  19. Improving the ethanol gas-sensing properties of porous ZnO microspheres by Co doping

    SciTech Connect (OSTI)

    Xiao, Qi Wang, Tao

    2013-08-01

    Graphical abstract: - Highlights: • Co-doped porous ZnO microspheres were synthesized. • 3 mol% Co-doped ZnO sensor showed the highest response to ethanol. • 3 mol% Co-doped ZnO sensor exhibited fast recovery property. • 3 mol% Co-doped ZnO sensor exhibited good selectivity and long-term stability. - Abstract: Porous Co-doped ZnO microspheres were prepared by a simple hydrothermal method combined with post-annealing. Co species existed as a form of divalent state in the sample and substituted Zn{sup 2+} sites in ZnO crystal lattice, which was affirmed by X-ray diffraction, UV–vis diffuse reflectance spectroscopy and X-ray photoelectron spectroscopy. The gas-sensing measurements demonstrated that the 3 mol% Co-doped ZnO sample showed the highest response value to 100 ppm ethanol at 350 °C, which were 5 folds higher than that of the pure ZnO sample. In addition, the 3 mol% Co-doped ZnO sensor exhibited fast recovery property, good quantitative determination, good selectivity and long-term stability. The superior sensing properties were contributed to high specific surface area combined with the large amount of oxygen vacancies originating from Co doping.

  20. Spin-dependent electron transport in zinc- and manganese-doped adenine molecules

    SciTech Connect (OSTI)

    Simchi, Hamidreza; Esmaeilzadeh, Mahdi Mazidabadi, Hossein

    2014-01-28

    The spin-dependent electron transport properties of zinc- and manganese-doped adenine molecules connected to zigzag graphene leads are studied in the zero bias regime using the non-equilibrium Green's function method. The conductance of the adenine molecule increased and became spin-dependent when a zinc or manganese atom was doped into the molecules. The effects of a transverse electric field on the spin-polarization of the transmitted electrons were investigated and the spin-polarization was controlled by changing the transverse electric field. Under the presence of a transverse electric field, both the zinc- and manganese-doped adenine molecules acted as spin-filters. The maximum spin-polarization of the manganese-doped adenine molecule was greater than the molecule doped with zinc.

  1. Magnetic properties and photoabsorption of the Mn-doped CeO{sub 2} nanorods

    SciTech Connect (OSTI)

    Xia, Chuanhui; Science College of Chongqing Jiaotong University, Chongqing 400074 ; Hu, Chenguo; Chen, Peng; Wan, Buyong; He, Xiaoshan; Tian, Yongshu; Chongqing Communication College, Chongqing 400035

    2010-07-15

    Mn-doped CeO{sub 2} nanorods have been prepared from CeO{sub 2} particles through a facile composite-hydroxide-mediated (CHM) approach. The analysis from X-ray photoelectron spectroscopy indicates that the manganese doped in CeO{sub 2} exists as Mn{sup 2+}. The magnetic measurement of the Mn-doped CeO{sub 2} nanorods exhibits an enhanced ferromagnetic property at room temperature with a remanence magnetization (Mr) of 1.36 x 10{sup -3} emu/g and coercivity (Hc) of 22 Oe. Comparative UV-visible spectra reveal the shift of the absorption peak of the CeO{sub 2} from ultraviolet region to visible light region after being doped with Mn. The room temperature ferromagnetic properties and light absorption of the Mn-doped CeO{sub 2} nanorods would have potential applications in photocatalysis and building of photovoltaic devices.

  2. Ferromagnetism at room temperature in Cr-doped anodic titanium dioxide nanotubes

    SciTech Connect (OSTI)

    Liao, Yulong E-mail: hwzhang@uestc.edu.cn; Zhang, Huaiwu E-mail: hwzhang@uestc.edu.cn; Li, Jie; Yu, Guoliang; Zhong, Zhiyong; Bai, Feiming; Jia, Lijun; Zhang, Shihong; Zhong, Peng

    2014-05-07

    This study reports the room-temperature ferromagnetism in Cr-doped TiO{sub 2} nanotubes (NTs) synthesized via the electrochemical method followed by a novel Cr-doping process. Scanning electron microscopy and transmission electron microscopy showed that the TiO{sub 2} NTs were highly ordered with length up to 26 ?m, outer diameter about 110 nm, and inner diameter about 100 nm. X-ray diffraction results indicated there were no magnetic contaminations of metallic Cr clusters or any other phases except anatase TiO{sub 2}. The Cr-doped TiO{sub 2} NTs were further annealed in oxygen, air and argon, and room-temperature ferromagnetism was observed in all Cr-doped samples. Moreover, saturation magnetizations and coercivities of the Cr-doped under various annealing atmosphere were further analyzed, and results indicate that oxygen content played a critical role in the room-temperature ferromagnetism.

  3. Effects of Cr doping on the magnetic properties of multiferroic YMnO{sub 3}

    SciTech Connect (OSTI)

    Han, Tai-Chun Wu, I-Chu; Hsu, Hsin-Kai

    2014-05-07

    We have synthesized a series of YMn{sub 1?x}Cr{sub x}O{sub 3} (0???x???0.1) samples and study the effect of Cr-doping on their magnetic properties. The magnetic characterization indicates that with increasing Cr-content up to 0.1, the antiferromagnetic (AFM) transition temperature increases from 73 to 89?K. Our experiment results also indicate that the Cr-doped samples exhibit the characteristics of spin-glass state at low temperature. Moreover, the magnetic hysteresis curves of the doped samples show a weak ferromagnetic (FM) behavior. It is found that the spin-glass state of the Cr-doped samples is due to the competition between AFM superexchange and FM double-exchange interaction, induced by the Cr doping.

  4. Bi-Se doped with Cu, p-type semiconductor

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  5. Analysis of impurity profiles in ion-doped silicon

    SciTech Connect (OSTI)

    Amirkhanov, A.V.; Samsonov, G.V.; Faizrakhmanov, V.R.

    1986-03-01

    The authors perform a comparative analysis of the use of Pearson-4 and double semi-Gaussian profiles for description of experimental data on ion doping of B, P, and As, in amorphous alpha- and polycrystalline poly-Si. The distribution moments obtained are compared with theoretical estimates which make it possible to accurately describe the profiles of boron (B/sup +/), phosphorus (P/sup +/), and Arsenic (As/sup +/), ion implantation in Si, if the Pearson-4 distribution is used for B and the double semi-Gaussian for P; for accurate description of As ion implantation profiles in Si, interpolation of the experimental moments must be used.

  6. Fabrication of solar cells with counter doping prevention

    DOE Patents [OSTI]

    Dennis, Timothy D; Li, Bo; Cousins, Peter John

    2013-02-19

    A solar cell fabrication process includes printing of dopant sources over a polysilicon layer over backside of a solar cell substrate. The dopant sources are cured to diffuse dopants from the dopant sources into the polysilicon layer to form diffusion regions, and to crosslink the dopant sources to make them resistant to a subsequently performed texturing process. To prevent counter doping, dopants from one of the dopant sources are prevented from outgassing and diffusing into the other dopant source. For example, phosphorus from an N-type dopant source is prevented from diffusing to a P-type dopant source comprising boron.

  7. Electrically conductive doped block copolymer of polyacetylene and polyisoprene

    DOE Patents [OSTI]

    Aldissi, Mahmoud

    1985-01-01

    An electrically conductive block copolymer of polyisoprene and polyacetyl and a method of making the same are disclosed. The polymer is prepared by first polymerizing isoprene with n-butyllithium in a toluene solution to form an active isoprenyllithium polymer. The active polymer is reacted with an equimolar amount of titanium butoxide and subsequently exposed to gaseous acetylene. A block copolymer of polyisoprene and polyacetylene is formed. The copolymer is soluble in common solvents and may be doped with I.sub.2 to give it an electrical conductivity in the metallic regime.

  8. Nitrogen-doped Graphene and Its Electrochemical Applications

    SciTech Connect (OSTI)

    Shao, Yuyan; Zhang, Sheng; Engelhard, Mark H.; Li, Guosheng; Shao, Guocheng; Wang, Yong; Liu, Jun; Aksay, Ilhan A.; Lin, Yuehe

    2010-06-04

    Nitrogen-doped graphene (N-graphene) is obtained by exposing graphene to nitrogen plasma. N-graphene exhibits much higher electrocatalytic activity toward oxygen reduction and H2O2 reduction than graphene, and much higher durability and selectivity than the widely-used expensive Pt. The excellent electrochemical performance of N-graphene is attributed to nitrogen functional groups and the specific properties of graphene. This indicates that N-graphene is promising for applications in electrochemical energy devices (fuel cells, metal-air batteries) and biosensors.

  9. Variable temperature electrochemical strain microscopy of Sm-doped ceria

    SciTech Connect (OSTI)

    Jesse, Stephen; Morozovska, A. N.; Kalinin, Sergei V; Eliseev, E. A.; Yang, Nan; Doria, Sandra; Tebano, Antonello

    2013-01-01

    Variable temperature electrochemical strain microscopy has been used to study the electrochemical activity of Sm-doped ceria as a function of temperature and bias. The electrochemical strain microscopy hysteresis loops have been collected across the surface at different temperatures and the relative activity at different temperatures has been compared. The relaxation behavior of the signal at different temperatures has been also evaluated to relate kinetic process during bias induced electrochemical reactions with temperature and two different kinetic regimes have been identified. The strongly non-monotonic dependence of relaxation behavior on temperature is interpreted as evidence for water-mediated mechanisms.

  10. Preparation and thermochromic properties of Ce-doped VO{sub 2} films

    SciTech Connect (OSTI)

    Song, Linwei; Zhang, Yubo; Huang, Wanxia; Shi, Qiwu; Li, Danxia; Zhang, Yang; Xu, Yuanjie

    2013-06-01

    Graphical abstract: This effect of doping concentration on the phase transition temperature of VO{sub 2} films demonstrates that the phase transition temperature is decreasing along with the increase of the Ce dopant concentrations. After doping Ce, the transition temperature of VO{sub 2} film changes appreciably. Highlights: ► Ce-doped VO{sub 2} films were prepared on muscovite substrate by inorganic sol–gel method for the first time. ► The cerium existing in the VO{sub 2} films in the form of Ce{sup 4+} and Ce{sup 3+} was substituted for part of V atoms in the lattice. ► Ce doping could remarkably reduce the particle size of the Ce-doped films compared with undoped films. ► The phase transition temperature of Ce-doped VO{sub 2} films decreased appreciably with maintaining high-quality phase transition. - Abstract: Mixture of cerium (III) nitrate hexahydrate and vanadium pentaoxide powder were used as precursor to prepare Ce-doped VO{sub 2} films on the muscovite substrate by inorganic sol–gel method. SEM, XRD and XPS were used to investigate the morphologies and structures of VO{sub 2} films. The results show that the VO{sub 2} films grow on the muscovite substrate with preferred orientated (0 1 1) plane and the Ce exists in the form of Ce{sup 4+} and Ce{sup 3+} replacing part of V atoms in the lattice. The infrared transmittance change was measured from room temperature to the temperature above the metal–insulator transition. The films have excellent thermochromic performance. The metal–insulator transition temperature of VO{sub 2} films changes appreciably with Ce doped, which decreases by 4.5 °C per 1 at.% doping. Furthermore, Ce doping could remarkably reduce the particle size of VO{sub 2} films.

  11. Carbon doping of III-V compound semiconductors

    SciTech Connect (OSTI)

    Moll, A.J.

    1994-09-01

    Focus of the study is C acceptor doping of GaAs, since C diffusion coefficient is at least one order of magnitude lower than that of other common p-type dopants in GaAs. C ion implantation results in a concentration of free holes in the valence band < 10% of that of the implanted C atoms for doses > 10{sup 14}/cm{sup 2}. Rutherford backscattering, electrical measurements, Raman spectroscopy, and Fourier transform infrared spectroscopy were amonth the techniques used. Ga co-implantation increased the C activation in two steps: first, the additional radiation damage creates vacant As sites that the implanted C can occupy, and second, it maintains the stoichiometry of the implanted layer, reducing the number of compensating native defects. In InP, the behavior of C was different from that in GaAs. C acts as n-type dopant in the In site; however, its incorporation by implantation was difficult to control; experiments using P co-implants were inconsistent. The lattice position of inactive C in GaAs in implanted and epitaxial layers is discussed; evidence for formation of C precipitates in GaAs and InP was found. Correlation of the results with literature on C doping in III-V semiconductors led to a phenomenological description of C in III-V compounds (particularly GaAs): The behavior of C is controlled by the chemical nature of C and the instrinsic Fermi level stabilization energy of the material.

  12. Crystallization and doping of amorphous silicon on low temperature plastic

    DOE Patents [OSTI]

    Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

    1994-09-13

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

  13. Crystallization and doping of amorphous silicon on low temperature plastic

    DOE Patents [OSTI]

    Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

    1994-01-01

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

  14. Near-infrared free carrier absorption in heavily doped silicon

    SciTech Connect (OSTI)

    Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

    2014-08-14

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10{sup 18} and 3 × 10{sup 20} cm{sup −3}. Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis.

  15. Chloride, bromide and iodide scintillators with europium doping

    DOE Patents [OSTI]

    Zhuravleva, Mariya; Yang, Kan

    2014-08-26

    A halide scintillator material is disclosed where the halide may comprise chloride, bromide or iodide. The material is single-crystalline and has a composition of the general formula ABX.sub.3 where A is an alkali, B is an alkali earth and X is a halide which general composition was investigated. In particular, crystals of the formula ACa.sub.1-yEu.sub.yI.sub.3 where A=K, Rb and Cs were formed as well as crystals of the formula CsA.sub.1-yEu.sub.yX.sub.3 (where A=Ca, Sr, Ba, or a combination thereof and X=Cl, Br or I or a combination thereof) with divalent Europium doping where 0.ltoreq.y.ltoreq.1, and more particularly Eu doping has been studied at one to ten mol %. The disclosed scintillator materials are suitable for making scintillation detectors used in applications such as medical imaging and homeland security.

  16. Dependence of inverse-spin Hall effect and spin-rectified voltage on tantalum thickness in Ta/CoFeB bilayer structure

    SciTech Connect (OSTI)

    Kim, Sang-Il; Seo, Min-Su; Park, Seung-Young; Kim, Dong-Jun; Park, Byong-Guk

    2015-01-19

    Ta-layer thickness (t{sub Ta}) dependence of the measured DC voltage V from the inverse-spin Hall effect (ISHE) in Ta/CoFeB bilayer structure is experimentally investigated using the ferromagnetic resonance in the TE{sub 011} resonant cavity. The ISHE signals excluding the spin-rectified effect (SRE) were separated from the fitted curve of V against t{sub Ta}. For t{sub Ta} ≈ λ{sub Ta} (Ta-spin diffusion length = 2.7 nm), the deviation in ISHE voltage V{sub ISH} between the experimental and theoretical values is significantly increased because of the large SRE contribution, which also results in a large deviation in the spin Hall angle θ{sub SH} (from 10% to 40%). However, when t{sub Ta} ≫ λ{sub Ta}, the V{sub ISH} values are consistent with theoretical values because the SRE terms become negligible, which subsequently improves the accuracy of the obtained θ{sub SH} within 4% deviation. The results will provide an outline for an accurate estimation of the θ{sub SH} for materials with small λ value, which would be useful for utilizing the spin Hall effect in a 3-terminal spintronic devices in which magnetization can be controlled by in-plane current.

  17. Influence of rare earth doping on thermoelectric properties of SrTiO{sub 3} ceramics

    SciTech Connect (OSTI)

    Liu, J. Wang, C. L.; Li, Y.; Su, W. B.; Zhu, Y. H.; Li, J. C.; Mei, L. M.

    2013-12-14

    Thermoelectric properties of SrTiO{sub 3} ceramics, doped with different rare earth elements, were investigated in this work. It's found that the ionic radius of doping elements plays an important role on thermoelectric properties: SrTiO{sub 3} ceramics doped with large rare earth ions (such as La, Nd, and Sm) exhibit large power factors, and those doped with small ions (such as Gd, Dy, Er, and Y) exhibit low thermal conductivities. Therefore, a simple approach for enhancing the thermoelectric performance of SrTiO{sub 3} ceramics is proposed: mainly doped with large ions to obtain a large power factor and, simultaneously, slightly co-doped with small ions to obtain a low thermal conductivity. Based on this rule, Sr{sub 0.8}La{sub 0.18}Yb{sub 0.02}TiO{sub 3} ceramics were prepared, whose ZT value at 1?023?K reaches 0.31, increasing by a factor of 19% compared with the single-doped counterpart Sr{sub 0.8}La{sub 0.2}TiO{sub 3} (ZT?=?0.26)

  18. Structural, optical and ethanol sensing properties of Cu-doped SnO{sub 2} nanowires

    SciTech Connect (OSTI)

    Johari, Anima Sharma, Manish; Johari, Anoopshi; Bhatnagar, M. C.

    2014-04-24

    In present work, one-dimensional nanostructure of Cu-doped Tin oxide (SnO{sub 2}) was synthesized by using thermal evaporation method in a tubular furnace under Nitrogen (N{sub 2}) ambience. The growth was carried out at atmospheric pressure. SEM and TEM images reveal the growth of wire-like nanostructures of Cu-doped SnO{sub 2} on Si substrate. The XRD analysis confirms that the synthesized SnO{sub 2} nanowires have tetragonal rutile structure with polycrystalline nature and X-ray diffraction pattern also showed that Cu gets incorporated into the SnO{sub 2} lattice. EDX spectra confirm the doping of Cu into SnO{sub 2} nanowires and atomic fraction of Cu in nanowires is ∼ 0.5 at%. The Vapor Liquid Solid (VLS) growth mechanism for Cu-doped SnO{sub 2} nanowires was also confirmed by EDX spectra. The optical properties of as grown Cu-doped SnO{sub 2} nanowires were studied by using UV-vis spectra which concludes the band gap of about 3.7 eV. As synthesized single Cu-doped SnO{sub 2} nanowire based gas sensor exhibit relatively good performance to ethanol gas. This sensing behaviour offers a suitable application of the Cu-doped SnO{sub 2} nanowire sensor for detection of ethanol gas.

  19. Structural and optical properties of chromium doped zinc oxide nanoparticles synthesized by sol-gel method

    SciTech Connect (OSTI)

    Naqvi, Syed Mohd. Adnan; Irshad, Kashif; Soleimani, Hassan E-mail: noorhana-yahya@petronas.com.my; Yahya, Noorhana E-mail: noorhana-yahya@petronas.com.my

    2014-10-24

    Nanosized Cr-doped ZnO nano particles were synthesized by facile sol-gel auto combustion method. The structural and optical properties of Cr-doped ZnO nanoparticles have been investigated by XRD and UV-Vis spectroscopy at room temperature for 0% to 8% concentration. X-ray diffraction analysis reveals that the Cr-doped ZnO crystallizes in a single phase polycrystalline nature with wurtzite lattice. With every % of doping, the peaks are shifting scarcely and doping of Cr is possible up to 7%. After that, the last peak vanishes, that signifies its structure is transmuted from 8% doping. The average crystallite size decreases with increase in Cr concentration (i.e. 28.9 nm for 0% to 25.8 nm for 8%). The UV-Vis spectra of the nanoparticles betoken an incrementation in the band gap energy from 3.401, 3.415, 3.431, 3.437,3.453, 3.514,3.521, 3.530 and 3.538 eV respectively, for 0,1, 2, 3, 4, 5, 6, 7 and 8 % doping concentration.

  20. Evidence for charge Kondo effect in superconducting Tl-doped PbTe (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Evidence for charge Kondo effect in superconducting Tl-doped PbTe Citation Details In-Document Search Title: Evidence for charge Kondo effect in superconducting Tl-doped PbTe We report results of low-temperature thermodynamic and transport measurements of Pb{sub 1-x}Tl{sub x}Te single crystals for Tl concentrations up to the solubility limit of approximately x = 1.5%. For all doped samples, we observe a low-temperature resistivity upturn that scales in magnitude

  1. Fermi arcs vs. fermi pockets in electron-doped perovskite iridates (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect SciTech Connect Search Results Journal Article: Fermi arcs vs. fermi pockets in electron-doped perovskite iridates Citation Details In-Document Search Title: Fermi arcs vs. fermi pockets in electron-doped perovskite iridates We report on an angle resolved photoemission (ARPES) study of bulk electron-doped perovskite iridate, (Sr1-xLax)₃Ir₂O₇. Fermi surface pockets are observed with a total electron count in keeping with that expected from La substitution.

  2. Defect Chemistry Study of Nitrogen Doped ZnO Thin Films

    SciTech Connect (OSTI)

    Miami University: Dr. Lei L. Kerr Wright State University: Dr. David C. Look and Dr. Zhaoqiang Fang

    2009-11-29

    Our team has investigated the defect chemistry of ZnO:N and developed a thermal evaporation (vapor-phase) method to synthesis p-type ZnO:N. Enhanced p-type conductivity of nitrogen doped ZnO via nano/micro structured rods and Zn-rich Co-doping process were studied. Also, an extended X-Ray absorption fine structure study of p-type nitrogen doped ZnO was conducted. Also reported are Hall-effect, photoluminescence, and DLTS studies.

  3. The effect of Au and Ni doping on the heavy fermion state of the Kondo

    Office of Scientific and Technical Information (OSTI)

    lattice antiferromagnet CePtZn (Journal Article) | SciTech Connect The effect of Au and Ni doping on the heavy fermion state of the Kondo lattice antiferromagnet CePtZn Citation Details In-Document Search Title: The effect of Au and Ni doping on the heavy fermion state of the Kondo lattice antiferromagnet CePtZn We have probed the effect of doping CePtZn with Au and Ni and also investigated in detail the magnetic behavior of the iso-structural CeAuZn. A magnetic ground state is observed in

  4. Anomalous Fermi-Surface Dependent Pairing in a Self-Doped

    Office of Scientific and Technical Information (OSTI)

    High-TcSuperconductor (Journal Article) | SciTech Connect Anomalous Fermi-Surface Dependent Pairing in a Self-Doped High-TcSuperconductor Citation Details In-Document Search Title: Anomalous Fermi-Surface Dependent Pairing in a Self-Doped High-TcSuperconductor We report the discovery of a self-doped multilayer high Tcsuperconductor Ba2Ca3Cu4O8F2 (F0234) which contains distinctly differentsuperconducting gap magnitudes along its two Fermi-surface sheets. Whileformal valence counting would

  5. Visible light photocatalytic property of Zn doped V{sub 2}O{sub 5} nanoparticles

    SciTech Connect (OSTI)

    Suresh, R.; Giribabu, K.; Vijayalakshmi, L.; Stephen, A.; Narayanan, V.

    2012-06-05

    The Zn doped V{sub 2}O{sub 5} nanoparticles were synthesized by thermal decomposition method. The prepared samples were characterized by various techniques like Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) studies, UV-Visible spectroscopy (UV-Vis) and field emission scanning electron microscopy (FE-SEM). The photocatalytic activities of pure and Zn doped V{sub 2}O{sub 5} nanoparticles were examined based on the photodegradation of Rhodamine B (RhB). Experimental results indicated that the Zn doped V{sub 2}O{sub 5} photocatalyst (the molar ratio of V to Zn is 99: 1) exhibited maximum photocatalytic activity.

  6. Homogeneous versus spiral phases of hole-doped antiferromagnets: A systematic effective field theory investigation

    SciTech Connect (OSTI)

    Bruegger, C.; Kaempfer, F.; Wiese, U.-J.; Hofmann, C. P.; Pepe, M.

    2007-01-01

    Using the low-energy effective field theory for magnons and holes--the condensed matter analog of baryon chiral perturbation theory for pions and nucleons in QCD--we study different phases of doped antiferromagnets. We systematically investigate configurations of the staggered magnetization that provide a constant background field for doped holes. The most general configuration of this type is either constant itself or represents a spiral in the staggered magnetization. Depending on the values of the low-energy parameters, a homogeneous phase, a spiral phase, or an inhomogeneous phase is energetically favored. The reduction of the staggered magnetization upon doping is also investigated.

  7. Structural studies and band gap tuning of Cr doped ZnO nanoparticles

    SciTech Connect (OSTI)

    Srinet, Gunjan Kumar, Ravindra Sajal, Vivek

    2014-04-24

    Structural and optical properties of Cr doped ZnO nanoparticles prepared by the thermal decomposition method are presented. X-ray diffraction studies confirmed the substitution of Cr on Zn sites without changing the wurtzite structure of ZnO. Modified form of W-H equations was used to calculate various physical parameters and their variation with Cr doping is discussed. Significant red shift was observed in band gap, i.e., a band gap tuning is achieved by Cr doping which could eventually be useful for optoelectronic applications.

  8. Influence of aluminium doping on thermoelectric performance of atomic layer deposited ZnO thin films

    SciTech Connect (OSTI)

    Ruoho, Mikko Pale, Ville; Erdmanis, Mikhail; Tittonen, Ilkka

    2013-11-11

    We study the effect of Al doping on thermoelectric power factor of ZnO films grown using atomic layer deposition method. The overall doping level is tuned by either varying the precursor pulsing sequence or by varying the number of precursor pulses while keeping the sequence unchanged. We observe that commonly utilized doping approach when periodic dopant layers are densely packed results in reduced power factor. At the same time, we find that thermoelectric performance can be improved by clustering the dopants. In addition, the clustering was found to tune the preferred crystal orientation of the polycrystalline film.

  9. Thermophotovoltaic energy conversion system having a heavily doped n-type region

    DOE Patents [OSTI]

    DePoy, David M.; Charache, Greg W.; Baldasaro, Paul F.

    2000-01-01

    A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.

  10. A widely tunable erbium-doped fiber laser pumped at 532 nm

    SciTech Connect (OSTI)

    Chen, C.Y. ); Choy, M.M.; Andrejco, M.J.; Saifi, M.A.; Lin, C. )

    1990-01-01

    In this paper, the authors report a tunable erbium-doped fiber laser with a very wide continuous-tuning range (1522--1567 nm). The wide tuning range was achieved using an aluminum/erbium-doped fiber; the aluminum co-doping is known to broaden the gain spectrum substantially. The tunable fiber laser has a ring laser configuration consisting of an in-line tunable etalon as the tuning element. Continuous tuning over 45 nm in the spectral range of 1522--1567 nm was achieved with 80 mW of pumping at 532 nm, using the second harmonic of a Nd:YAG laser as the pump source.

  11. Enhancing the Electron Mobility via Delta-Doping in SrTiO3

    SciTech Connect (OSTI)

    Kozuka, Y.

    2011-08-11

    We fabricated high-mobility {delta}-doped structures in SrTiO{sub 3} thin films in order to investigate the low temperature electronic transport properties of confined carriers in this system. An enhancement of the electron mobility above the bulk value was observed as the doped layer thickness decreased. High-field Hall measurements revealed that this mobility enhancement originates from higher-mobility electrons in the undoped clean regions, which have quantum-mechanically broadened from the doped layer. Because of the absence of apparent lattice misfit between the layers, this structure is highly suitable for investigating two-dimensional electron gases in SrTiO{sub 3}

  12. Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells

    SciTech Connect (OSTI)

    Fan, W. J.

    2013-11-14

    Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band kp method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30??10{sup 18}?cm{sup ?3}.

  13. Cr.sup.3+ -doped colquiriite solid state laser material

    DOE Patents [OSTI]

    Payne, Stephen A.; Chase, Lloyd L.; Newkirk, Herbert W.; Krupke, William F.

    1989-01-01

    Chromium doped colquiriite, LiCaAlF.sub.6 :Cr.sup.3+, is useful as a tunable laser crystal that has a high intrinsic slope efficiency, comparable to or exceeding that of alexandrite, the current leading performer of vibronic sideband Cr.sup.3+ lasers. The laser output is tunable from at least 720 nm to 840 nm with a measured slop efficiency of about 60% in a Kr laser pumped laser configuration. The intrinsic slope efficiency (in the limit of large output coupling) may approach the quantum defect limited value of 83%. The high slope efficiency implies that excited state absorption (ESA) is negligible. The potential for efficiency and the tuning range of this material satisfy the requirements for a pump laser for a high density storage medium incorporating Nd.sup.3+ or Tm.sup.3+ for use in a multimegajoule single shot fusion research facility.

  14. Cr/sup 3 +/-doped colquiriite solid state laser material

    DOE Patents [OSTI]

    Payne, S.A.; Chase, L.L.; Newkirk, H.W.; Krupke, W.F.

    1988-03-31

    Chromium doped colquiriite, LiCaAlF/sub 6/:Cr/sup 3 +/, is useful as a tunable laser crystal that has a high intrinsic slope efficiency, comparable to or exceeding that of alexandrite, the current leading performer of vibronic sideband Cr/sup 3 +/ lasers. The laser output is tunable from at least 720 nm to 840 nm with a measured slope efficiency of about 60% in a Kr laser pumped laser configuration. The intrinsic slope efficiency (in the limit of large output coupling) may approach the quantum defect limited value of 83%. The high slope efficiency implies that excited state absorption (ESA) is negligible. The potential for efficiency and the tuning range of this material satisfy the requirements for a pump laser for a high density storage medium incorporating Nd/sup 3 +/ or Tm/sup 3 +/ for use in a multimegajoule single shot fusion research facility. 4 figs.

  15. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  16. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  17. Temperature Mapping of Nitrogen-doped Niobium Superconducting Radiofrequency Cavities

    SciTech Connect (OSTI)

    Makita, Junki; Ciovati, Gianluigi; Dhakal, Pashupati

    2015-09-01

    It was recently shown that diffusing nitrogen on the inner surface of superconducting radiofrequency (SRF) cavities at high temperature can improve the quality factor of the niobium cavity. However, a reduction of the quench field is also typically found. To better understand the location of rf losses and quench, we used a thermometry system to map the temperature of the outer surface of ingot Nb cavities after nitrogen doping and electropolishing. Surface temperature of the cavities was recorded while increasing the rf power and also during the quenching. The results of thermal mapping showed no precursor heating on the cavities and quenching to be ignited near the equator where the surface magnetic field is maximum. Hot-spots at the equator area during multipacting were also detected by thermal mapping.

  18. Blue emission of Eu2+-doped translucent alumina

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Yan; Zhang, Lihua; Kisslinger, Kim; Wei, Hua; Melcher, Charles L.; Wu, Yiquan

    2015-08-21

    Inorganic scintillators are very important in medical and industrial measuring systems in the detection and measurement of ionizing radiation. In addition to Ce3+, a widely used dopant ion in oxide scintillators, divalent Europium (Eu2+) has shown promise as a high-luminescence, fast-response luminescence center useful in the detection of ionizing radiation. In this research, aluminum oxide (Al2O3) was studied as a host material for the divalent europium ion. Polycrystalline samples of Eu2+-doped translucent Al2O3 were fabricated, and room temperature luminescence behavior was observed. Al2O3 ceramics doped with 0.1 at% Eu2+ were fabricated with a relative density of 99.75% theoretical density andmore » in-line transmittance of 22% at a wavelength of 800 nm. The ceramics were processed by a gel-casting method, followed by sintering under high vacuum. The gelling agent, a copolymer of isobutylene and maleic anhydride, is marketed under the commercial name ISOBAM, and has the advantage of simultaneously acting as both a gelling agent and as a dispersant. The microstructure and composition of the vacuum-sintered Eu2+:Al2O3 were characterized by Scanning Electric Microscopy (SEM), Transmission Electron Microscopy (TEM), and Energy-dispersive X-ray spectroscopy (EDS). The phase composition was determined by X-ray diffraction measurements (XRD) combined with Rietveld analysis. The photoluminescence behavior of the Eu2+:Al2O3 was characterized using UV light as the excitation source, which emitted blue emission at 440 nm. The radio-luminescence of Eu2+:Al2O3 was investigated by illumination with X-ray radiation, showing three emission bands at 376 nm, 575 nm and 698 nm. Furthermore, multiple level traps at different depths were detected in the Eu2+:Al2O3 by employing thermoluminescence measurements.« less

  19. Spin filtering in a δ-doped magnetic-electric-barrier nanostructure

    SciTech Connect (OSTI)

    Li, Shuai; Lu, Mao-Wang Jiang, Ya-Qing; Chen, Sai-Yan

    2014-09-15

    We report a theoretical study on spin-polarized transport in a δ-doped magnetic-electric-barrier nanostructure, which can be realized in experiments by depositing two ferromagnetic stripes on top and bottom of a semiconductor heterostructure under an applied voltage and by using atomic layer doping technique. The spin-polarized behavior of the electron in this device is found to be quite sensitive to the δ-doping. One can conveniently tune the degree of the electron spin polarization by adjusting the weight and/or position of the δ-doping. Thus, the involved nansosystem can be employed as a controllable spin filter, which may be helpful for exploiting new spin-polarized source for spintronics applications.

  20. Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

    SciTech Connect (OSTI)

    Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie Gu, Changzhi

    2014-05-05

    B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3?K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63?nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity.

  1. A new class of high ZT doped bulk nanothermoelectrics through bottom-up synthesis

    Broader source: Energy.gov [DOE]

    Reports on synthesis of large quantities of p- and n-type nanocrystals then sintered into bulk samples with high power factors and low thermal conductivity through impurity doping and nanostructuring

  2. Systematic low-energy effective field theory for electron-doped antiferromagnets

    SciTech Connect (OSTI)

    Bruegger, C.; Kaempfer, F.; Moser, M.; Wiese, U.-J.; Hofmann, C. P.; Pepe, M.

    2007-06-01

    In contrast to hole-doped systems which have hole pockets centered at ({+-}({pi}/2a),{+-}({pi}/2a)), in lightly electron-doped antiferromagnets the charged quasiparticles reside in momentum space pockets centered at (({pi}/a),0) or (0,({pi}/a)). This has important consequences for the corresponding low-energy effective field theory of magnons and electrons which is constructed in this paper. In particular, in contrast to the hole-doped case, the magnon-mediated forces between two electrons depend on the total momentum P-vector of the pair. For P-vector=0, the one-magnon exchange potential between two electrons at distance r is proportional to 1/r{sup 4}, while in the hole case, it has a 1/r{sup 2} dependence. The effective theory predicts that spiral phases are absent in electron-doped antiferromagnets.

  3. Local structures of copper-doped ZnO films (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    Citation Details In-Document Search Title: Local structures of copper-doped ZnO films Authors: Ma, Q. ; Buchholz, D.B. ; Chang, R.P.H. 1 + Show Author Affiliations (NWU) ...

  4. Electronic and magnetic properties of Fe and Mn doped two dimensional hexagonal germanium sheets

    SciTech Connect (OSTI)

    Soni, Himadri R. Jha, Prafulla K.

    2014-04-24

    Using first principles density functional theory calculations, the present paper reports systematic total energy calculations of the electronic properties such as density of states and magnetic moment of pristine and iron and manganese doped two dimensional hexagonal germanium sheets.

  5. The effect of Au and Ni doping on the heavy fermion state of...

    Office of Scientific and Technical Information (OSTI)

    We have probed the effect of doping CePtZn with Au and Ni and also investigated in detail the magnetic behavior of the iso-structural CeAuZn. A magnetic ground state is observed in ...

  6. Summary of EXAFS results on Cd-doped PuRhIn5 (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    Citation Details In-Document Search Title: Summary of EXAFS results on Cd-doped PuRhIn5 Authors: Booth, C H ; Bauer, E D ; Tobin, J G Publication Date: 2014-06-12 OSTI Identifier: ...

  7. Highly resistive epitaxial Mg-doped GdN thin films

    SciTech Connect (OSTI)

    Lee, C.-M.; Warring, H.; Trodahl, H. J.; Ruck, B. J.; Natali, F.; Vézian, S.; Damilano, B.; Cordier, Y.; Granville, S.; Al Khalfioui, M.

    2015-01-12

    We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 10{sup 3} Ω cm and carrier concentrations of 10{sup 16 }cm{sup −3} are obtained for films with Mg concentrations up to 5 × 10{sup 19} atoms/cm{sup 3}. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali, B. J. Ruck, H. J. Trodahl, D. L. Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond, and C. Meyer, Phys. Rev. B 87, 035202 (2013)].

  8. Strong Asymmetrical Doping Properties of Spinel CoAl2O4

    SciTech Connect (OSTI)

    Feng, C. B.; Yin, W. J.; Nie, J. L.; Zu, X. T.; Huda, M. N.; Wei, S. H.; Al-Jassim, M. M.; Turner, J. A.; Yan, Y. F.

    2012-06-01

    Using first-principles density-functional theory, we have investigated the intrinsic and extrinsic doping properties of CoAl{sub 2}O{sub 4} by calculating the transition energies and formation energies of intrinsic and extrinsic defects. We find that CoAl{sub 2}O{sub 4} exhibits strong asymmetrical doping properties: Although excellent p-type conductivity can be achieved by Li or Na doping at O-rich growth condition, n-type conductivity cannot be achieved by any intrinsic or extrinsic dopants at any growth conditions. These asymmetrical doping properties are attributed to the formation of intrinsic defects, particularly Al{sub Co}, which has very low formation energy at all growth conditions. Our results suggest that for better use of CoAl{sub 2}O{sub 4}, the electronic devices should require CoAl{sub 2}O{sub 4} to exhibit p-type conductivity.

  9. Modifications of Superconducting Properties of Niobium Caused by Nitrogen Doping Recipes for High Q Cavities

    SciTech Connect (OSTI)

    Vostrikov, Alexander; Checchin, Mattia; Grassellino, Anna; Kim, Young-Kee; Romanenko, Alexander

    2015-06-01

    A study is presented on the superconducting properties of niobium used for the fabrication of the SRF cavities after treating by recently discovered nitrogen doping methods. Cylindrical niobium samples have been subjected to the standard surface treatments applied to the cavities (electro-polishing, l 20°C bake) and compared with samples treated by additional nitrogen doping recipes routinely used to reach ultra-high quality factor values (>3· 1010 at 2 K, 16 MV/m). The DC magnetization curves and the complex magnetic AC susceptibility have been measured. Evidence for the lowered field of first flux penetration after nitrogen doping is found suggesting a correlation with the lowered quench fields. Superconducting critical temperatures Tc = 9.25 K are found to be in agreement with previous measurements, and no strong effect on the critical surface field (Bd) from nitrogen doping was found.

  10. The location and doping effect of boron in Si nanocrystals embedded silicon oxide film

    SciTech Connect (OSTI)

    Xie, Min; Li, Dongsheng; Chen, Le; Wang, Feng; Zhu, Xiaodong; Yang, Deren

    2013-03-25

    Electrically activated doping of boron (B) atoms into the Si-nanocrystals (Si-NCs) embedded silicon oxide film is achieved by co-sputtering technique following with the annealing treatment. The evolution of the size, the shape, and the density of Si-NCs with the doping of B atoms is investigated. The observation of x-ray photoelectron spectroscopy of Si 2p and B 1s and the decrease in lattice spacing of Si (111) plane suggest that B atoms are doped into Si-NCs. The activated doping is confirmed by the Fano effect of the micro-Raman spectra for Si-NCs and the drastic decrease of the sheet resistance.

  11. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect (OSTI)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

  12. Synthesis, structural and optical characterization of undoped, N-doped ZnO and co-doped ZnO thin films

    SciTech Connect (OSTI)

    Pathak, Trilok Kumar Kumar, R.; Purohit, L. P.

    2015-05-15

    ZnO, N-doped ZnO and Al-N co-doped ZnO thin films were deposited on ITO coated corning glass by spin coater using sol-gel method. The films were annealed in air at 450°C for one hour. The crystallographic structure and morphology of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The X-ray diffraction results confirm that the thin films are of wurtzite hexagonal with a very small distortion. The optical properties were investigated by transmission spectra of different films using spectrophotometer (Shimadzu UV-VIS-NIR 3600). The results indicate that the N doped ZnO thin films have obviously enhanced transmittance in visible region. Moreover, the thickness of the films has strong influences on the optical constants.

  13. Fermi Energy Tuning with Light to Control Doping Profiles During Epitaxy;

    Office of Scientific and Technical Information (OSTI)

    Article No. 182105 (Journal Article) | SciTech Connect Fermi Energy Tuning with Light to Control Doping Profiles During Epitaxy; Article No. 182105 Citation Details In-Document Search Title: Fermi Energy Tuning with Light to Control Doping Profiles During Epitaxy; Article No. 182105 Authors: Sanders, Charlotte E. ; Beaton, Daniel A. ; Reedy, Robert C. ; Alberi, Kristin Publication Date: 2015-05-04 OSTI Identifier: 1220719 Report Number(s): NREL/JA-5K00-64047 Resource Type: Journal Article

  14. Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

    SciTech Connect (OSTI)

    Steiner, S A; Baumann, T F; Kong, J; Satcher, J H; Dresselhaus, M S

    2007-02-15

    We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

  15. Metal-doped single-walled carbon nanotubes and production thereof

    DOE Patents [OSTI]

    Dillon, Anne C.; Heben, Michael J.; Gennett, Thomas; Parilla, Philip A.

    2007-01-09

    Metal-doped single-walled carbon nanotubes and production thereof. The metal-doped single-walled carbon nanotubes may be produced according to one embodiment of the invention by combining single-walled carbon nanotube precursor material and metal in a solution, and mixing the solution to incorporate at least a portion of the metal with the single-walled carbon nanotube precursor material. Other embodiments may comprise sputter deposition, evaporation, and other mixing techniques.

  16. Nitrogen-Doped Mesoporous Carbon Promoted Chemical Adsorption of Sulfur and

    Office of Scientific and Technical Information (OSTI)

    Fabrication of High-Areal-Capacity Sulfur Cathode with Exceptional Cycling Stability for Lithium-Sulfur Batteries (Journal Article) | SciTech Connect Nitrogen-Doped Mesoporous Carbon Promoted Chemical Adsorption of Sulfur and Fabrication of High-Areal-Capacity Sulfur Cathode with Exceptional Cycling Stability for Lithium-Sulfur Batteries Citation Details In-Document Search Title: Nitrogen-Doped Mesoporous Carbon Promoted Chemical Adsorption of Sulfur and Fabrication of High-Areal-Capacity

  17. Luminescent studies of fluorescent chromophore-doped silica aerogels for flat panel display applications

    SciTech Connect (OSTI)

    Glauser, S.A.C. [California Univ., Davis, CA (United States). Dept. of Applied Science; Lee, H.W.H. [Lawrence Livermore National Lab., CA (United States)

    1997-04-01

    The remarkable optical and electronic properties of doped and undoped silica aerogels establish their utility as unique, mulitfunctional host materials for fluorescent dyes and other luminescent materials for display and imaging applications. We present results on the photoluminescence, absorption, and photoluminescence excitation spectra of undoped silica aerogels and aerogels doped with Er{sup 3+}, rhodamine 6G (R6G), and fluorescein. 4 refs., 12 figs.

  18. Deterministic coupling of delta-doped nitrogen vacancy centers to a

    Office of Scientific and Technical Information (OSTI)

    nanobeam photonic crystal cavity (Journal Article) | SciTech Connect Deterministic coupling of delta-doped nitrogen vacancy centers to a nanobeam photonic crystal cavity Citation Details In-Document Search Title: Deterministic coupling of delta-doped nitrogen vacancy centers to a nanobeam photonic crystal cavity The negatively charged nitrogen vacancy center (NV) in diamond has generated significant interest as a platform for quantum information processing and sensing in the solid state. For

  19. Hydrothermal synthesis and characteristics of anions-doped calcium molybdate red powder phosphors

    SciTech Connect (OSTI)

    Shi, Shikao; Zhang, Yan; Liu, Qing; Zhou, Ji

    2013-10-15

    Graphical abstract: - Highlights: Four anion-doped CaMoO{sub 4}:Eu{sup 3+} red phosphors were prepared by hydrothermal approach. Some samples exhibit nearly spherical morphology and well-distributed fine particles. The red luminescence can be obviously enhanced after certain amount of anion doping. The improved phosphor system is a potential candidate for white LED applications. - Abstract: Applying hydrothermal and subsequent heat-treatment process, CaMoO{sub 4}:Eu{sup 3+} was doped with four anions (SiO{sub 3}{sup 2?}, PO{sub 4}{sup 3?}, SO{sub 4}{sup 2?} and ClO{sub 3}{sup ?}) to prepare fine red powder phosphors. The introduction of small amount of anions into the host had little influence on the structure, which was confirmed by X-ray diffraction patterns. The anion-doped phosphor samples (except SiO{sub 3}{sup 2?}) exhibited nearly spherical morphology, and the particle sizes were in the range of 0.30.4 ?m for SO{sub 4}{sup 2?}-doped samples, and 0.81.2 ?m for PO{sub 4}{sup 3?} and ClO{sub 3}{sup ?}-doped samples. Excited with 395 nm near-UV light, all samples showed typical Eu{sup 3+} red emission at 615 nm, and PO{sub 4}{sup 3?}, SO{sub 4}{sup 2?} and ClO{sub 3}{sup ?}-doped samples enhanced the red luminescence as compared with the individual CaMoO{sub 4}:Eu{sup 3+} sample. In particular, relative emission intensity for optimum ClO{sub 3}{sup ?}-doped phosphors reached more than 6-fold that of the commercial red phosphor, which is highly desirable for the powder phosphors used in the solid-state lighting industry.

  20. Improving thermostability of CrO{sub 2} thin films by doping with Sn

    SciTech Connect (OSTI)

    Ding, Yi; Wang, Ziyu; Liu, Shuo; Shi, Jing; Yin, Di; Yuan, Cheng; Lu, Zhihong; Xiong, Rui

    2014-09-01

    Chromium dioxide (CrO{sub 2}) is an ideal material for spin electronic devices since it has almost 100% spin polarization near Fermi level. However, it is thermally unstable and easily decomposes to Cr{sub 2}O{sub 3} even at room temperature. In this study, we try to improve the thermal stability of CrO{sub 2} thin films by doping with Sn whose oxide has the same structure as CrO{sub 2}. High quality epitaxial CrO{sub 2} and Sn-doped CrO{sub 2} films were grown on single crystalline TiO{sub 2} (100) substrates by chemical vapor deposition. Sn{sup 4+} ions were believed to be doped into CrO{sub 2} lattice and take the lattice positions of Cr{sup 4+}. The magnetic measurements show that Sn-doping leads to a decrease of magnetocrystalline anisotropy. The thermal stabilities of the films were evaluated by annealing the films at different temperatures. Sn-doped films can withstand a temperature up to 510 °C, significantly higher than what undoped films can do (lower than 435 °C), which suggests that Sn-doping indeed enhances the thermal stability of CrO{sub 2} films. Our study also indicates that Sn-doping may not change the essential half metallic properties of CrO{sub 2}. Therefore, Sn-doped CrO{sub 2} is expected to be very promising for applications in spintronic devices.

  1. Doping Cu{sub 2}O in Electrolyte Solution: Dopant Incorporation, Atomic Structures and Electrical Properties

    SciTech Connect (OSTI)

    Tao, Meng; Zhang, Qiming

    2013-11-24

    We have pursued a number of research activities between April 2010 and April 2011:  A detailed study on n-type doping in Cu2O by Br;  An analysis of natural resource limitations to terawatt-scale solar cells;  Attempt to achieve a 1.4-eV direct band gap in Ni sulfides (NiSx);  First-principles studies of doping in Cu2O and electronic structures of NiSx.

  2. Undoped and doped poly(tetraphenylbenzidine) as sensitive material for an

    Office of Scientific and Technical Information (OSTI)

    impedimetric nitrogen dioxide gas dosimeter (Journal Article) | SciTech Connect Undoped and doped poly(tetraphenylbenzidine) as sensitive material for an impedimetric nitrogen dioxide gas dosimeter Citation Details In-Document Search Title: Undoped and doped poly(tetraphenylbenzidine) as sensitive material for an impedimetric nitrogen dioxide gas dosimeter This article presents a nitrogen dioxide (NO{sub 2}) detecting gas dosimeter based on poly(tetraphenylbenzidine) poly(TPD) as nitrogen

  3. Superparamagnetic behavior of Fe-doped SnO{sub 2} nanoparticles

    SciTech Connect (OSTI)

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

    2014-02-20

    SnO{sub 2} is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO{sub 2} nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO{sub 2} nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO{sub 2}, were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO{sub 2} single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO{sub 2} is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

  4. Temperature Dependence of Aliovalent-vanadium Doping in LiFePO4 Cathodes

    SciTech Connect (OSTI)

    Harrison, Katharine L; Bridges, Craig A; Paranthaman, Mariappan Parans; Idrobo Tapia, Juan C; Manthiram, Arumugam; Goodenough, J. B.; Segre, C; Katsoudas, John; Maroni, V. A.

    2013-01-01

    Vanadium-doped olivine LiFePO4 cathode materials have been synthesized by a novel low-temperature microwave-assisted solvothermal (MW-ST) method at 300 oC. Based on chemical and powder neutron/X-ray diffraction analysis, the compositions of the synthesized materials were found to be LiFe1-3x/2Vx x/2PO4 (0 x 0.2) with the presence of a small number of lithium vacancies charge-compensated by V4+, not Fe3+, leading to an average oxidation state of ~ 3.2+ for vanadium. Heating the pristine 15 % V-doped sample in inert or reducing atmospheres led to a loss of vanadium from the olivine lattice with the concomitant formation of a Li3V2(PO4)3 impurity phase; after phase segregation, a partially V-doped olivine phase remained. For comparison, V-doped samples were also synthesized by conventional ball milling and heating, but only ~ 10 % V could be accommodated in the olivine lattice in agreement with previous studies. The higher degree of doping realized with the MW-ST samples demonstrates the temperature dependence of the aliovalent-vanadium doping in LiFePO4.

  5. Method and closing pores in a thermally sprayed doped lanthanum chromite interconnection layer

    DOE Patents [OSTI]

    Singh, Prabhakar; Ruka, Roswell J.

    1995-01-01

    A dense, substantially gas-tight electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an air electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO.sub.3 particles doped with an element or elements selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by thermal spraying doped LaCrO.sub.3 particles, either by plasma arc spraying or flame spraying; (C) depositing a mixture of CaO and Cr.sub.2 O.sub.3 on the surface of the thermally sprayed layer; and (D) heating the doped LaCrO.sub.3 layer coated with CaO and Cr.sub.2 O.sub.3 surface deposit at from about 1000.degree. C. to 1200.degree. C. to substantially close the pores, at least at a surface, of the thermally sprayed doped LaCrO.sub.3 layer. The result is a dense, substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the nonselected portion of the air electrode. A fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell, for example for generation of electrical power.

  6. Method and closing pores in a thermally sprayed doped lanthanum chromite interconnection layer

    DOE Patents [OSTI]

    Singh, P.; Ruka, R.J.

    1995-02-14

    A dense, substantially gas-tight electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an air electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO{sub 3} particles doped with an element or elements selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by thermal spraying doped LaCrO{sub 3} particles, either by plasma arc spraying or flame spraying; (C) depositing a mixture of CaO and Cr{sub 2}O{sub 3} on the surface of the thermally sprayed layer; and (D) heating the doped LaCrO{sub 3} layer coated with CaO and Cr{sub 2}O{sub 3} surface deposit at from about 1,000 C to 1,200 C to substantially close the pores, at least at a surface, of the thermally sprayed doped LaCrO{sub 3} layer. The result is a dense, substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the nonselected portion of the air electrode. A fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell, for example for generation of electrical power. 5 figs.

  7. Effectively suppressing dissolution of manganese from spinel lithium manganate via a nanoscale surface-doping approach

    SciTech Connect (OSTI)

    Lu, Jun; Zhan, Chun; Wu, Tianpin; Wen, Jianguo; Lei, Yu; Kropf, A. Jeremy; Wu, Huiming; Miller, Dean J.; Elam, Jeffrey W.; Sun, Yang-Kook; Qiu, Xinping; Amine, Khalil

    2014-12-16

    The capacity fade of lithium manganate-based cells is associated with the dissolution of Mn from cathode/electrolyte interface due to the disproportionation reaction of Mn(III), and the subsequent deposition of Mn(II) on the anode. Suppressing the dissolution of Mn from the cathode is critical to reducing capacity fade of LiMn2O4-based cells. Here we report a nanoscale surface-doping approach that minimizes Mn dissolution from lithium manganate. This approach exploits advantages of both bulk doping and surface-coating methods by stabilizing surface crystal structure of lithium manganate through cationic doping while maintaining bulk lithium manganate structure, and protecting bulk lithium manganate from electrolyte corrosion while maintaining ion and charge transport channels on the surface through the electrochemically active doping layer. Consequently, the surface-doped lithium manganate demonstrates enhanced electrochemical performance. This study provides encouraging evidence that surface doping could be a promising alternative to improve the cycling performance of lithium-ion batteries.

  8. Electronic properties of graphene and effect of doping on the same

    SciTech Connect (OSTI)

    Nag, Abhinav Kumar, Jagdish Sastri, O. S. K. S.

    2015-05-15

    The electronic structure of pure and doped two dimensional crystalline material graphene have been computed and analyzed. Density functional theory has been employed to perform calculations. The electronic exchange and correlations are considered using local density approximation (LDA). The doped material is studied within virtual crystal approximation (VCA) upto 0.15e excess as well as deficient charge per unit cell. Full Potential Linear Augmented Plane Wave basis as implemented in ELK code has been used to perform the calculations. To ensures the monolayer of graphene, distance after which energy is almost constant when interlayer seperation is varied, is taken as separating distance between the layers. The obtained density of states and band structure is analyzed. Results show that there is zero band gap in undoped graphene and conduction and valence band meets at fermi level at symmetry point K. PDOS graph shows that near the fermi level the main contribution is due to 2p{sub z} electrons. By using VCA, calculations for doped graphene are done and the results for doped graphene are compared with undoped graphene. We found that by electron or hole doping, the point where conduction and valence bands meet can shift below or above the fermi level. The shift in bands seems almost as per rigid band model upto doping concentration studied.

  9. Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yoo, Jinkyoung; Yi, Gyu -Chul; Chon, Bonghwan; Joo, Taiha; Wang, Zhehui

    2016-04-11

    In this study, all-optical camera, converting X-rays into visible photons, is a promising strategy for high-performance X-ray imaging detector requiring high detection efficiency and ultrafast detector response time. Zinc oxide is a suitable material for all-optical camera due to its fast radiative recombination lifetime in sub-nanosecond regime and its radiation hardness. ZnO nanostructures have been considered as proper building blocks for ultrafast detectors with spatial resolution in sub-micrometer scale. To achieve remarkable enhancement of luminescence efficiency n-type doping in ZnO has been employed. However, luminescence dynamics of doped ZnO nanostructures have not been thoroughly investigated whereas undoped ZnO nanostructures havemore » been employed to study their luminescence dynamics. Here we report a study of luminescence dynamics of hydrogen doped ZnO nanowires obtained by hydrogen plasma treatment. Hydrogen doping in ZnO nanowires gives rise to significant increase in the near-band-edge emission of ZnO and decrease in averaged photoluminescence lifetime from 300 to 140 ps at 10 K. The effects of hydrogen doping on the luminescent characteristics of ZnO nanowires were changed by hydrogen doping process variables.« less

  10. Method of making self-aligned lightly-doped-drain structure for MOS transistors

    DOE Patents [OSTI]

    Weiner, Kurt H.; Carey, Paul G.

    2001-01-01

    A process for fabricating lightly-doped-drains (LDD) for short-channel metal oxide semiconductor (MOS) transistors. The process utilizes a pulsed laser process to incorporate the dopants, thus eliminating the prior oxide deposition and etching steps. During the process, the silicon in the source/drain region is melted by the laser energy. Impurities from the gas phase diffuse into the molten silicon to appropriately dope the source/drain regions. By controlling the energy of the laser, a lightly-doped-drain can be formed in one processing step. This is accomplished by first using a single high energy laser pulse to melt the silicon to a significant depth and thus the amount of dopants incorporated into the silicon is small. Furthermore, the dopants incorporated during this step diffuse to the edge of the MOS transistor gate structure. Next, many low energy laser pulses are used to heavily dope the source/drain silicon only in a very shallow region. Because of two-dimensional heat transfer at the MOS transistor gate edge, the low energy pulses are inset from the region initially doped by the high energy pulse. By computer control of the laser energy, the single high energy laser pulse and the subsequent low energy laser pulses are carried out in a single operational step to produce a self-aligned lightly-doped-drain-structure.

  11. Effect of doping on growth and field emission properties of spherical carbon nanotube tip placed over cylindrical surface

    SciTech Connect (OSTI)

    Santolia, Isha; Tewari, Aarti; Sharma, Suresh C.; Sharma, Rinku

    2014-06-15

    Theoretical investigations to study the effect of doping of hetero-atoms on the growth and field emission properties of Carbon Nanotubes (CNTs) tip placed over a cylindrical surface in complex plasma have been carried out. A theoretical model incorporating kinetics of plasma species such as electron, ions, and neutral atoms including doping elements like nitrogen (N) and boron (B) and energy balance of CNTs in a complex plasma has been developed. The effect of doping elements of N and B on the growth of CNTs, namely, the tip radius has been carried out for typical glow discharge plasma parameters. It is found that N and B as doping elements affect the radius of CNTs extensively. We obtain small radii of CNT doped with N and large radius of CNT doped with B. The field emission characteristics from CNTs have therefore been suggested on the basis of results obtained. Some of theoretical results are in compliance with the existing experimental observations.

  12. Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Guo, Der-Feng; Lour, Wen-Shiung

    2011-09-15

    In this article, the comparison of DC performance on InGaP/GaAs pseudomorphic field-effect transistors with tripe doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity because more twodimensional electron gases are formed in the heaviest doped channel to enhance the magnitude of negative threshold voltage. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.

  13. Effect of carrier doping on the formation and collapse of magnetic polarons in lightly hole-doped La1-xSrxCoO3

    SciTech Connect (OSTI)

    Podlesnyak, Andrey A; Ehlers, Georg; Frontzek, Matthias D; Sefat, A. S.; Furrer, Albert; Straessle, Thierry; Pomjakushina, Ekaterina; Conder, Kazimierz; Demmel, F.; Khomskii, D. I.

    2011-01-01

    We investigate the doping dependence of the nanoscale electronic and magnetic inhomogeneities in the hole-doping range 0.002 < x < 0.1 of cobalt based perovskites, La{sub 1-x}Sr{sub x}CoO{sub 3}. Using single-crystal inelastic neutron scattering and magnetization measurements we show that the lightly doped system exhibits magnetoelectronic phase separation in the form of spin-state polarons. Higher hole doping leads to a decay of spin-state polarons in favor of larger scale magnetic clusters, due to competing ferromagnetic correlations of Co{sup 3+} ions which are formed by neighboring polarons. The present data give evidence for two regimes of magnetoelectronic phase separation in this system: (i) x {approx}< 0.05, dominated by ferromagnetic intrapolaron interactions, and (ii) x {approx}> 0.05, dominated by Co{sup 3+}-Co{sup 3+} intracluster interactions. Our conclusions are in good agreement with a recently proposed model of the phase separation in cobalt perovskites.

  14. Nonlinear optical coupler using a doped optical waveguide

    DOE Patents [OSTI]

    Pantell, Richard H.; Sadowski, Robert W.; Digonnet, Michel J. F.; Shaw, Herbert J.

    1994-01-01

    An optical mode coupling apparatus includes an Erbium-doped optical waveguide in which an optical signal at a signal wavelength propagates in a first spatial propagation mode and a second spatial propagation mode of the waveguide. The optical signal propagating in the waveguide has a beat length. The coupling apparatus includes a pump source of perturbational light signal at a perturbational wavelength that propagates in the waveguide in the first spatial propagation mode. The perturbational signal has a sufficient intensity distribution in the waveguide that it causes a perturbation of the effective refractive index of the first spatial propagation mode of the waveguide in accordance with the optical Kerr effect. The perturbation of the effective refractive index of the first spatial propagation mode of the optical waveguide causes a change in the differential phase delay in the optical signal propagating in the first and second spatial propagation modes. The change in the differential phase delay is detected as a change in the intensity distribution between two lobes of the optical intensity distribution pattern of an output signal. The perturbational light signal can be selectively enabled and disabled to selectively change the intensity distribution in the two lobes of the optical intensity distribution pattern.

  15. Method of preparing doped oxide catalysts for lean NOx exhaust

    DOE Patents [OSTI]

    Park, Paul W.

    2004-03-09

    The lean NOx catalyst includes a substrate, an oxide support material, preferably .gamma.-alumina deposited on the substrate and a metal or metal oxide promoter or dopant introduced into the oxide support material. The metal promoters or dopants are selected from the group consisting of indium, gallium, tin, silver, germanium, gold, nickel, cobalt, copper, iron, manganese, molybdenum, chromium cerium, and vanadium, and oxides thereof, and any combinations thereof. The .gamma.-alumina preferably has a pore volume of from about 0.5 to about 2.0 cc/g; a surface area of between 80 and 350 m.sup.2 /g; an average pore size diameter of between about 3 to 30 nm; and an impurity level of less than or equal to about 0.2 weight percent. In a preferred embodiment the .gamma.-alumina is prepared by a sol-gel method, with the metal doping of the .gamma.-alumina preferably accomplished using an incipient wetness impregnation technique.

  16. DEVELOPMENT OF DOPED NANOPOROUS CARBONS FOR HYDROGEN STORAGE

    SciTech Connect (OSTI)

    Angela D. Lueking; Qixiu Li; John V. Badding; Dania Fonseca; Humerto Gutierrez; Apurba Sakti; Kofi Adu; Michael Schimmel

    2010-03-31

    Hydrogen storage materials based on the hydrogen spillover mechanism onto metal-doped nanoporous carbons are studied, in an effort to develop materials that store appreciable hydrogen at ambient temperatures and moderate pressures. We demonstrate that oxidation of the carbon surface can significantly increase the hydrogen uptake of these materials, primarily at low pressure. Trace water present in the system plays a role in the development of active sites, and may further be used as a strategy to increase uptake. Increased surface density of oxygen groups led to a significant enhancement of hydrogen spillover at pressures less than 100 milibar. At 300K, the hydrogen uptake was up to 1.1 wt. % at 100 mbar and increased to 1.4 wt. % at 20 bar. However, only 0.4 wt% of this was desorbable via a pressure reduction at room temperature, and the high lowpressure hydrogen uptake was found only when trace water was present during pretreatment. Although far from DOE hydrogen storage targets, storage at ambient temperature has significant practical advantages oner cryogenic physical adsorbents. The role of trace water in surface modification has significant implications for reproducibility in the field. High-pressure in situ characterization of ideal carbon surfaces in hydrogen suggests re-hybridization is not likely under conditions of practical interest. Advanced characterization is used to probe carbon-hydrogen-metal interactions in a number of systems and new carbon materials have been developed.

  17. Impurity-doped optical shock, detonation and damage location sensor

    DOE Patents [OSTI]

    Weiss, Jonathan D.

    1995-01-01

    A shock, detonation, and damage location sensor providing continuous fiber-optic means of measuring shock speed and damage location, and could be designed through proper cabling to have virtually any desired crush pressure. The sensor has one or a plurality of parallel multimode optical fibers, or a singlemode fiber core, surrounded by an elongated cladding, doped along their entire length with impurities to fluoresce in response to light at a different wavelength entering one end of the fiber(s). The length of a fiber would be continuously shorted as it is progressively destroyed by a shock wave traveling parallel to its axis. The resulting backscattered and shifted light would eventually enter a detector and be converted into a proportional electrical signals which would be evaluated to determine shock velocity and damage location. The corresponding reduction in output, because of the shortening of the optical fibers, is used as it is received to determine the velocity and position of the shock front as a function of time. As a damage location sensor the sensor fiber cracks along with the structure to which it is mounted. The size of the resulting drop in detector output is indicative of the location of the crack.

  18. Impurity-doped optical shock, detonation and damage location sensor

    DOE Patents [OSTI]

    Weiss, J.D.

    1995-02-07

    A shock, detonation, and damage location sensor providing continuous fiber-optic means of measuring shock speed and damage location, and could be designed through proper cabling to have virtually any desired crush pressure. The sensor has one or a plurality of parallel multimode optical fibers, or a singlemode fiber core, surrounded by an elongated cladding, doped along their entire length with impurities to fluoresce in response to light at a different wavelength entering one end of the fiber(s). The length of a fiber would be continuously shorted as it is progressively destroyed by a shock wave traveling parallel to its axis. The resulting backscattered and shifted light would eventually enter a detector and be converted into a proportional electrical signals which would be evaluated to determine shock velocity and damage location. The corresponding reduction in output, because of the shortening of the optical fibers, is used as it is received to determine the velocity and position of the shock front as a function of time. As a damage location sensor the sensor fiber cracks along with the structure to which it is mounted. The size of the resulting drop in detector output is indicative of the location of the crack. 8 figs.

  19. Optical emission from erbium-doped silica nanowires

    SciTech Connect (OSTI)

    Elliman, R. G.; Wilkinson, A. R.; Kim, T.-H.; Sekhar, P. K.; Bhansali, S.

    2008-05-15

    Infrared optical emission from erbium-doped silica nanowires is shown to have property characteristic of the material nanostructure and to provide the basis for the fabrication of integrated photonic devices and biosensors. Silica nanowires of approximately 150 nm diameter were grown on a silicon wafer by metal-induced growth using a thin (20 nm) sputter-deposited palladium layer as a catalyst. The resulting wires were then ion implanted with 110 keV ErO{sup -} ions and annealed at 900 deg. C to optically activate the erbium. These wires exhibited photoluminescence emission at 1.54 {mu}m, characteristic of the {sup 4}I{sub 15/2}-{sup 4}I{sub 13/2} transition in erbium; however, comparison to similarly implanted fused silica layers revealed stronger thermal quenching and longer luminescence lifetimes in the nanowire samples. The former is attributed to an increase in defect-induced quenching partly due to the large surface-volume ratio of the nanowires, while the latter is attributed to a reduction in the optical density of states associated with the nanostructure morphology. Details of this behavior are discussed together with the implications for potential device applications.

  20. Enhanced photocatalytic performance of Ga{sup 3+}-doped ZnO

    SciTech Connect (OSTI)

    Zhong, Jun Bo; Li, Jian Zhang; Zeng, Jun; He, Xi Yang; Hu, Wei; Shen, Yue Cheng

    2012-11-15

    Graphical abstract: In general, the strong SPS response corresponds to the high separation rate of photoinduced charge carriers on the basis of the SPS principle. The photovoltage of Ga{sup 3+}-doped ZnO is higher than that of ZnO, thus it can be confirmed that the Ga{sup 3+}-doped ZnO has a higher charge separation rate than the ZnO sample. Among these samples, 1%Ga has highest charge separation rate. Display Omitted Highlights: ► Ga{sup 3+} has been employed to dope ZnO photocatalyst. ► Ga{sup 3+} increases the BET surface area and changes the morphology of ZnO. ► The photoinduced charge separation rate has been enhanced. ► The photocatalytic activity has been greatly promoted. -- Abstract: ZnO and Ga{sup 3+}-doped ZnO with different molar ratio of Ga/Zn (1%, 2% and 3%) were prepared by a parallel flow precipitation method. The photocatalysts prepared were characterized by BET surface area, X-ray diffraction (XRD), UV/vis diffuse reflectance spectroscopy (DRS), scanning electron microscope (SEM) and surface photovoltage spectroscopy (SPS), respectively. The results show that doping Ga{sup 3+} into ZnO increases the BET surface area. The XRD spectra of the photocatalysts calcined at 573 K show only the characteristic peaks of wurtzite-type. Ga{sup 3+}-doped ZnO absorbs much more light than ZnO in the visible light region. Doping Ga{sup 3+} into ZnO greatly changes the morphology of ZnO and enhances the photoinduced charge separation rate. The photocatalytic activity of ZnO and Ga{sup 3+}-doped ZnO for decolorization of methyl orange (MO) solution was evaluated, of all the photocatalysts prepared, the Ga{sup 3+}-doped ZnO with 1% possesses the best photocatalytic activity and the possible reason was discussed.

  1. Top-gate organic depletion and inversion transistors with doped channel and injection contact

    SciTech Connect (OSTI)

    Liu, Xuhai; Kasemann, Daniel Leo, Karl

    2015-03-09

    Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

  2. Thermodynamic Analysis Of Pure And Impurity Doped Pentaerythritol Tetranitrate Crystals Grown At Room Temperature

    SciTech Connect (OSTI)

    Pitchimani, R; Zheng, W; Simon, S; Hope-Weeks, L; Burnham, A K; Weeks, B L

    2006-05-25

    Pentaerythritol tetranitrate (PETN) powders are used to initiate other explosives. During long-term storage, changes in powder properties can cause changes in the initiation performance. Changes in the morphology and surface area of aging powders are observed due to sublimation and growth of PETN crystals through coarsening mechanisms, (e.g. Ostwald ripening, sintering, etc.). In order to alleviate the sublimation of PETN crystals under service conditions, stabilization methods such as thermal cycling and doping with certain impurities during or after the crystallization of PETN have been proposed. In this report we present our work on the effect of impurities on the morphology and activation energy of the PETN crystals. The pure and impurity doped crystals of PETN were grown from supersaturated acetone solution by solvent evaporation technique at room temperature. The difference in the morphology of the impurity-doped PETN crystal compared to pure crystal was examined by optical microscopy. The changes in the activation energies and the evaporation rates are determined by thermogravimetric (TGA) analyses. Our activation energies of evaporation agree with earlier reported enthalpies of vaporization. The morphology and activation energy of PETN crystals doped with Ca, Na, and Fe cations are similar to that for pure PETN crystal, whereas the Zn-ion-doped PETN crystals have different morphology and decreased activation energy.

  3. Fabrication and characterization of cerium-doped barium titanate inverse opal by sol-gel method

    SciTech Connect (OSTI)

    Jin Yi; Zhu Yihua Yang Xiaoling; Li Chunzhong; Zhou Jinghong

    2007-01-15

    Cerium-doped barium titanate inverted opal was synthesized from barium acetate contained cerous acetate and tetrabutyl titanate in the interstitial spaces of a polystyrene (PS) opal. This procedure involves infiltration of precursors into the interstices of the PS opal template followed by hydrolytic polycondensation of the precursors to amorphous barium titanate and removal of the PS opal by calcination. The morphologies of opal and inverse opal were characterized by scanning electron microscope (SEM). The pores were characterized by mercury intrusion porosimetry (MIP). X-ray photoelectron spectroscopy (XPS) investigation showed the doping structure of cerium, barium and titanium. And powder X-ray diffraction allows one to observe the influence of doping degree on the grain size. The lattice parameters, crystal size and lattice strain were calculated by the Rietveld refinement method. The synthesis of cerium-doped barium titanate inverted opals provides an opportunity to electrically and optically engineer the photonic band structure and the possibility of developing tunable three-dimensional photonic crystal devices. - Graphical abstract: Cerium-doped barium titanate inverted opal was synthesized from barium acetate acid contained cerous acetate and tetrabutyl titanate in the interstitial spaces of a PS opal, which involves infiltration of precursors into the interstices of the PS opal template and removal of the PS opal by calcination.

  4. Structural Environment of Nitrogen in N-doped Rutile TiO2(110)

    SciTech Connect (OSTI)

    Henderson, Michael A.; Shutthanandan, V.; Ohsawa, Takeo; Chambers, Scott A.

    2010-12-31

    We employ x-ray photoelectron spectroscopy (XPS), reflection high-energy electron diffraction (RHEED) and nuclear reaction analysis (NRA) to characterize the concentration-dependent structural properties of nitrogen doping into rutile TiO2. High quality N-doped TiO2 were prepared on rutile single crystal TiO2(110) substrates using plasma-assisted molecular beam epitaxy with an electron cyclotron resonance (ECR) plasma and Ti effusive sources. Films with N dopant concentrations at or below 2 at.% exhibited predominately substitutional doping based on NRA data, whereas films with concentrations above this limit resulted in little or no substitutional N and surfaces rich in Ti3+. The binding energy of the N 1s feature in XPS did not readily distinguish between these two extremes in N-doping, rendering features within 0.4 eV of each other and similar peak profiles. Although widely used to characterize the state of N in anion-doped TiO2 materials, we find that XPS is unsuitable for this task.

  5. Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods

    SciTech Connect (OSTI)

    Sinha, Nidhi; Ray, Geeta; Godara, Sanjay; Gupta, Manoj K.; Kumar, Binay

    2014-11-15

    Highlights: • Low cost highly crystalline Cr-doped ZnO nanorods were synthesized. • Enhancement in dielectric, piezoelectric and ferroelectric properties were observed. • A high output voltage was obtained in AFM. • Cr-doping resulted in enhanced conductivity and better Ohmic behavior in ZnO/Ag contact. - Abstract: Highly crystalline Cr-doped ZnO nanorods (NRs) were synthesized by solution technique. The size distribution was analyzed by high resolution tunneling electron microscope (HRTEM) and particle size analyzer. In atomic force microscope (AFM) studies, peak to peak 8 mV output voltage was obtained on the application of constant normal force of 25 nN. It showed high dielectric constant (980) with phase transition at 69 °C. Polarization vs. electric field (P–E) loops with remnant polarization (6.18 μC/cm{sup 2}) and coercive field (0.96 kV/cm) were obtained. In I–V studies, Cr-doping was found to reduce the rectifying behavior in the Ag/ZnO Schottky contact which is useful for field effect transistor (FET) and solar cell applications. With these excellent properties, Cr-doped ZnO NRs can be used in nanopiezoelectronics, charge storage and ferroelectric applications.

  6. Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

    SciTech Connect (OSTI)

    Urban, J. M.; Binder, J.; Wysmo?ek, A.; D?browski, P.; Strupi?ski, W.; Kopciuszy?ski, M.; Ja?ochowski, M.; Klusek, Z.

    2014-06-21

    We present optical, electrical, and structural properties of nitrogen-doped graphene grown on the Si face of 4H-SiC (0001) by chemical vapor deposition method using propane as the carbon precursor and N{sub 2} as the nitrogen source. The incorporation of nitrogen in the carbon lattice was confirmed by X-ray photoelectron spectroscopy. Angle-resolved photoemission spectroscopy shows carrier behavior characteristic for massless Dirac fermions and confirms the presence of a graphene monolayer in the investigated nitrogen-doped samples. The structural and electronic properties of the material were investigated by Raman spectroscopy. A systematical analysis of the graphene Raman spectra, including D, G, and 2D bands, was performed. In the case of nitrogen-doped samples, an electron concentration on the order of 510 10{sup 12}?cm{sup ?2} was estimated based upon Raman and Hall effect measurements and no clear dependence of the carrier concentration on nitrogen concentration used during growth was observed. This high electron concentration can be interpreted as both due to the presence of nitrogen in graphitic-like positions of the graphene lattice as well as to the interaction with the substrate. A greater intensity of the Raman D band and increased inhomogeneity, as well as decreased electron mobility, observed for nitrogen-doped samples, indicate the formation of defects and a modification of the growth process induced by nitrogen doping.

  7. Formation of Carbon Nanostructures in Cobalt- and Nickel-Doped Carbon Aerogels

    SciTech Connect (OSTI)

    Fu, R; Baumann, T F; Cronin, S; Dresselhaus, G; Dresselhaus, M; Satcher, Jr., J H

    2004-11-09

    We have prepared carbon aerogels (CAs) doped with cobalt or nickel through sol-gel polymerization of formaldehyde with the potassium salt of 2,4-dihydroxybenzoic acid, followed by ion-exchange with M(NO{sub 3}){sub 2} (where M = Co{sup 2+} or Ni{sup 2+}), supercritical drying with liquid CO{sub 2} and carbonization at temperatures between 400 C and 1050 C under an N{sub 2} atmosphere. The nanostructures of these metal-doped carbon aerogels were characterized by elemental analysis, nitrogen adsorption, high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). Metallic nickel and cobalt nanoparticles are generated during the carbonization process at about 400 C and 450 C, respectively, forming nanoparticles that are {approx}4 nm in diameter. The sizes and size dispersion of the metal particles increase with increasing carbonization temperatures for both materials. The carbon frameworks of the Ni- and Co-doped aerogels carbonized below 600 C mainly consist of interconnected carbon particles with a size of 15 to 30 nm. When the samples are pyrolyzed at 1050 C, the growth of graphitic nanoribbons with different curvatures is observed in the Ni and Co-doped carbon aerogel materials. The distance of graphite layers in the nanoribbons is about 0.38 nm. These metal-doped CAs retain the overall open cell structure of metal-free CAs, exhibiting high surface areas and pore diameters in the micro and mesoporic region.

  8. Structural properties of pure and Fe-doped Yb films prepared by vapor condensation

    SciTech Connect (OSTI)

    Rojas-Ayala, C.; Passamani, E.C.; Suguihiro, N.M.; Litterst, F.J.; Baggio Saitovitch, E.

    2014-10-15

    Ytterbium and iron-doped ytterbium films were prepared by vapor quenching on Kapton substrates at room temperature. Structural characterization was performed by X-ray diffraction and transmission electron microscopy. The aim was to study the microstructure of pure and iron-doped films and thereby to understand the effects induced by iron incorporation. A coexistence of face centered cubic and hexagonal close packed-like structures was observed, the cubic-type structure being the dominant contribution. There is an apparent thickness dependence of the cubic/hexagonal relative ratios in the case of pure ytterbium. Iron-clusters induce a crystalline texture effect, but do not influence the cubic/hexagonal volume fraction. A schematic model is proposed for the microstructure of un-doped and iron-doped films including the cubic- and hexagonal-like structures, as well as the iron distribution in the ytterbium matrix. - Highlights: • Pure and Fe-doped Yb films have been prepared by vapor condensation. • Coexistence of fcc- and hcp-type structures was observed. • No oxide phases have been detected. • Fe-clustering does not affect the fcc/hcp ratio, but favors a crystalline texture. • A schematic model is proposed to describe microscopically the microstructure.

  9. D{sup 0} magnetism in Ca doped narrow carbon nanotubes: First principle chirality effect study

    SciTech Connect (OSTI)

    Hajiheidari, F.; Khoshnevisan, B.; Hashemifar, S. J.

    2014-06-21

    Curvature has always had crucial effects on the physical properties of narrow carbon nanotubes (CNTs) and here spin-polarized density functional calculations were employed to study electronic and magnetic properties of calcium-decorated narrow (5,5) and (9,0)CNTs with close diameters (∼7 Å) and different chiralities. Our results showed that chirality had great impact on the electronic structure and magnetization of the doped CNTs. In addition, internally or externally doping of the calcium atoms was studied comparatively and although for the (9,0)CNT the internal doping was the most stable configuration, which involves a novel kind of spin-polarization originated from Ca-4s electrons, but for the (5,5)tube the external doping was the most stable one without any spin-polarization. On the other hand, calcium doping in the center of the (5,5)CNT was an endothermic process and led to the spin-polarization of unoccupied Ca-3d orbitals via direct exchange interaction between adjacent Ca atoms. In the considered systems, the existence of magnetization in the absence of any transition-metal elements was an example of valuable d{sup 0} magnetism title.

  10. Magnetic properties of transition metal doped AlN nanosheet: First-principle studies

    SciTech Connect (OSTI)

    Shi, Changmin; Qin, Hongwei Zhang, Yongjia; Hu, Jifan; Ju, Lin

    2014-02-07

    We carry out our first-principles calculations within density functional theory to study the 3d transition metal (TM) doped AlN nanosheets. The calculated results indicate that a stoichiometric AlN nanosheet is graphene-like structure and nonmagnetic. The TM impurities can induce magnetic moments, localized mainly on the 3d TM atoms and neighboring N atoms. Our calculated results of TM-doped nanosheet systems indicate a strong interaction between 3d orbit of TM atom and the 2p orbit of N atoms. In addition, the Mn- and Ni-doped AlN nanosheet with half-metal characters seems to be good candidates for spintronic applications. When substituting two Al atoms, the relative energies of the states between ferromagnetic and antiferromagnetic coupling are investigated sufficiently. The exchange coupling of Co- and Ni-doped AlN nanosheets exhibits a transformation with different distances of two TM atoms and that of Cr-, Mn-, and Fe-doped AlN nanosheets is not changed.

  11. Doping evolution of spin and charge excitations in the Hubbard model

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kung, Y. F.; Nowadnick, E. A.; Jia, C. J.; Johnston, S.; Moritz, B.; Scalettar, R. T.; Devereaux, T. P.

    2015-11-05

    We shed light on how electronic correlations vary across the phase diagram of the cuprate superconductors, examining the doping evolution of spin and charge excitations in the single-band Hubbard model using determinant quantum Monte Carlo (DQMC). In the single-particle response, we observe that the effects of correlations weaken rapidly with doping, such that one may expect the random phase approximation (RPA) to provide an adequate description of the two-particle response. In contrast, when compared to RPA, we find that significant residual correlations in the two-particle excitations persist up to 40% hole and 15% electron doping (the range of dopings achievedmore » in the cuprates). Ultimately, these fundamental differences between the doping evolution of single- and multi-particle renormalizations show that conclusions drawn from single-particle processes cannot necessarily be applied to multi-particle excitations. Eventually, the system smoothly transitions via a momentum-dependent crossover into a weakly correlated metallic state where the spin and charge excitation spectra exhibit similar behavior and where RPA provides an adequate description.« less

  12. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    der Max-Planck-Gesellschaft, Germany). Research funding: U.S. Department of Energy (DOE), Office of Basic Energy Sciences (BES); the National Research Foundation of Korea; the Max...

  13. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    » Bilateral Cooperation Bilateral Cooperation 2014 U.S.-China Bilateral Action Plan Steering Committee Meeting 2014 U.S.-China Bilateral Action Plan Steering Committee Meeting The Office of Nuclear Energy Policy and Cooperation (INEPC) works with international partners on civil nuclear cooperation, ranging from advanced fuel cycle countries such as France, Russia and Japan, to those nations considering the development of nuclear energy for the first time NE-6 looks to leverage resources to

  14. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    nor in AA and AB stacked graphenes, but is a consequence of the twist between graphene layers. The introduction of the twist generates a completely new electronic structure that...

  15. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    nanoelectronics. This is a narrower bandgap than common semiconductors like silicon or gallium arsenide, and it could enable new kinds of optoelectronic devices for generating,...

  16. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    bandgaps through the application of an external electric field. When tested in transistor-like geometries, however, the "off" state was not quite complete; a surprisingly...

  17. Twist Solves Bilayer Graphene Mystery

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    spectrum with surprisingly strong signatures in ARPES data. (Image courtesy of Keun Su Kim.) Graphene, an atomically thin carbon layer whose atoms are arranged in a honeycomb...

  18. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on the Electron Superhighway Graphene's electrical properties include electrons so mobile they travel at near light speed. But if graphene is to work as a carbon-based...

  19. Enhanced performance of branched TiO{sub 2} nanorod based Mn-doped CdS and Mn-doped CdSe quantum dot-sensitized solar cell

    SciTech Connect (OSTI)

    Kim, Soo-Kyoung; Gopi, Chandu V. V. M.; Lee, Jae-Cheol; Kim, Hee-Je

    2015-04-28

    TiO{sub 2} branched nanostructures could be efficient as photoanodes for quantum dot-sensitized solar cells (QDSCs) due to their large surface area for QD deposition. In this study, Mn-doped CdS/Mn-doped CdSe deposited branched TiO{sub 2} nanorods were fabricated to enhance the photovoltaic performance of QDSCs. Mn doping in CdS and CdSe retards the recombination losses of electrons, while branched TiO{sub 2} nanorods facilitate effective electron transport and compensate for the low surface area of the nanorod structure. As a result, the charge-transfer resistance (R{sub CT}), electron lifetime (?{sub e}), and the amount of QD deposition were significantly improved with branched TiO{sub 2} nanorod based Mn-doped CdS/Mn-doped CdSe quantum dot-sensitized solar cell.

  20. Improve photovoltaic performance of titanium dioxide nanorods based dye-sensitized solar cells by Ca-doping

    SciTech Connect (OSTI)

    Li, Weixin; Yang, Junyou Zhang, Jiaqi; Gao, Sheng; Luo, Yubo; Liu, Ming

    2014-09-15

    Highlights: • TiO{sub 2} nanorods doped with Ca ions were synthesized by one-step hydrothermal method. • The flat band edge of rutile TiO{sub 2} shifted positively via Ca-doping. • The photoelectric conversion efficiency of dye-sensitized solar cells (DSSCs) based on TiO{sub 2} electrode was much enhanced by Ca-doping. • A relatively high open circuit voltage was obtained by adopting Ca-doped TiO{sub 2} nanorods electrode. - Abstract: Ca-doped TiO{sub 2} nanorod arrays were prepared via the one-step hydrothermal method successfully, and the effect of Ca ions content on the photovoltaic conversion efficiency of dye-sensitized solar cells has been fully discussed in the paper. Although no obvious change on the microstructure and morphology was observed by field emission scanning electron microscope and transmission electron microscope for the Ca-doped samples, the results of X-ray diffraction and X-ray photoelectron spectroscopy confirmed that Ti{sup 4+} was substituted with Ca{sup 2+} successfully. UV–vis spectroscopy results revealed that the flat band edge shifted positively by Ca ions doping. The photovoltaic conversion efficiency of the dye-sensitized solar cells based on the 2 mol% Ca-doped TiO{sub 2} electrode was 43% higher than that of the undoped one due to the less recombination possibility.

  1. H.sub.2O doped WO.sub.3, ultra-fast, high-sensitivity hydrogen sensors

    DOE Patents [OSTI]

    Liu, Ping; Tracy, C. Edwin; Pitts, J. Roland; Lee, Se-Hee

    2011-03-22

    An ultra-fast response, high sensitivity structure for optical detection of low concentrations of hydrogen gas, comprising: a substrate; a water-doped WO.sub.3 layer coated on the substrate; and a palladium layer coated on the water-doped WO.sub.3 layer.

  2. Amphoteric doping of praseodymium Pr3+ in SrTiO3 grain boundaries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, H.; Lee, H. S.; Kotula, P. G.; Sato, Y.; Ikuhara, Y.; Browning, N. D.

    2015-03-26

    Charge Compensation in rare-earth Praseodymium (Pr3+) doped SrTiO3 plays an important role in determining the overall photoluminescence properties of the system. Here, the Pr3+ doping behavior in SrTiO3 grain boundaries (GBs) is analyzed using aberration corrected scanning transmission electron microscopy (STEM). The presence of Pr3+ induces structure variations and changes the statistical prevalence of GB structures. In contrast to the assumption that Pr3+ substitutes for A site as expected in the bulk, Pr3+ is found to substitute both Sr and Ti sites inside GBs with the highest concentration in the Ti sites. As a result, this amphoteric doping behavior inmore » the boundary plane is further confirmed by first principles theoretical calculations.« less

  3. Method for making defect-free zone by laser-annealing of doped silicon

    DOE Patents [OSTI]

    Narayan, Jagdish; White, Clark W.; Young, Rosa T.

    1980-01-01

    This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.

  4. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

    DOE Patents [OSTI]

    Carlson, David E.; Wronski, Christopher R.

    1979-01-01

    A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

  5. Motion of Doped-Polymer-Cholesteric Liquid Crystal Flakes in a Direct-Current Electric Field

    SciTech Connect (OSTI)

    Trajkovska Petkoska, A.; Kosc, T.Z.; Marshall, K.L.; Hasman, K.; Jacobs, S.D.

    2008-05-02

    The behavior of polymer cholesteric liquid crystal (PCLC) flakes suspended in silicone oil host fluids has been explored in the presence of a direct-current electric field. In addition to neat (undoped) flakes, the PCLC material was doped with either conductive, carbon-based particles or highly dielectric inorganic particles to modify the dielectric properties of the resulting PCLC flakes. Doping with conductive particles produced flakes with a net charge, and they exhibited either translational or rotational motion depending on both the distribution of dopant within the flake and the dielectric characteristics of the host fluid. Flakes doped with titania (TiO2) particles reoriented 90 when suspended in a host fluid with a differing dielectric permittivity

  6. Laser-ablated active doping technique for visible spectroscopy measurements on Z.

    SciTech Connect (OSTI)

    Gomez, Matthew Robert

    2013-09-01

    Visible spectroscopy is a powerful diagnostic, allowing plasma parameters ranging from temperature and density to electric and magnetic fields to be measured. Spectroscopic dopants are commonly introduced to make these measurements. On Z, dopants are introduced passively (i.e. a salt deposited on a current-carrying surface); however, in some cases, passive doping can limit the times and locations at which measurements can be made. Active doping utilizes an auxiliary energy source to disperse the dopant independently from the rest of the experiment. The objective of this LDRD project was to explore laser ablation as a method of actively introducing spectroscopic dopants. Ideally, the laser energy would be delivered to the dopant via fiber optic, which would eliminate the need for time-intensive laser alignments in the Z chamber. Experiments conducted in a light lab to assess the feasibility of fibercoupled and open-beam laser-ablated doping are discussed.

  7. Effect of Fe doping concentration on photocatalytic activity of ZnO nanosheets under natural sunlight

    SciTech Connect (OSTI)

    Khokhra, Richa; Kumar, Rajesh

    2015-05-15

    A facile room temperature, aqueous solution-based chemical method has been adopted for large-scale synthesis of Fe doped ZnO nanosheets. The XRD and SEM results reveal the as-synthesized products well crystalline and accumulated by large amount of interweave nanosheets, respectively. Energy dispersive spectroscopy data confirmed Fe doping of the ZnO nanosheets with a varying Fe concentration. The photoluminescence spectrum reveals a continuous suppression of defect related emissions intensity by increasing the concentration of the Fe ion. A photocatalytic activity using these samples under sunlight irradiation in the mineralization of methylene blue dye was investigated. The photocatalytic activity of Fe doped ZnO nanosheets depends upon the presence of surface oxygen vacancies.

  8. Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance

    SciTech Connect (OSTI)

    Dai, Qilin; Wang, Wenyong E-mail: jtang2@uwyo.edu; Tang, Jinke E-mail: jtang2@uwyo.edu; Sabio, Erwin M.

    2014-05-05

    In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

  9. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Venkatesh, S.; Baras, A.; Lee, J. -S.; Roqan, I. S.

    2016-03-24

    Here, we studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (~40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetismmore » in doped/un-doped ZnO.« less

  10. Improved carrier mobility of chemical vapor deposition-graphene by counter-doping with hydrazine hydrate

    SciTech Connect (OSTI)

    Chen, Zhiying; Zhang, Yanhui; Zhang, Haoran; Sui, Yanping; Zhang, Yaqian; Ge, Xiaoming; Yu, Guanghui Xie, Xiaoming; Li, Xiaoliang; Jin, Zhi; Liu, Xinyu

    2015-03-02

    We developed a counter-doping method to tune the electronic properties of chemical vapor deposition (CVD)-grown graphene by varying the concentration and time of graphene exposure to hydrazine hydrate (N{sub 2}H{sub 4}H{sub 2}O). The shift of G and 2D peaks of Raman spectroscopy is analyzed as a function of N{sub 2}H{sub 4}H{sub 2}O concentration. The result revealed that N{sub 2}H{sub 4}H{sub 2}O realized n-type doping on CVD grown graphene. X-ray photoelectron spectroscopy measurement proved the existence of nitrogen, which indicated the adsorption of N{sub 2}H{sub 4} on the surface of graphene. After counter-doping, carrier mobility, which was measured by Hall measurements, increased three fold.

  11. Amphoteric doping of praseodymium Pr3+ in SrTiO3 grain boundaries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, H.; Lee, H. S.; Kotula, P. G.; Sato, Y.; Ikuhara, Y.; Browning, N. D.

    2015-03-26

    Charge Compensation in rare-earth Praseodymium (Pr3+) doped SrTiO3 plays an important role in determining the overall photoluminescence properties of the system. Here, the Pr3+ doping behavior in SrTiO3 grain boundaries (GBs) is analyzed using aberration corrected scanning transmission electron microscopy (STEM). The presence of Pr3+ induces structure variations and changes the statistical prevalence of GB structures. In contrast to the assumption that Pr3+ substitutes for A site as expected in the bulk, Pr3+ is found to substitute both Sr and Ti sites inside GBs with the highest concentration in the Ti sites. As a result, this amphoteric doping behavior inmore »the boundary plane is further confirmed by first principles theoretical calculations.« less

  12. Multi-wavelength Raman scattering of nanostructured Al-doped zinc oxide

    SciTech Connect (OSTI)

    Russo, V.; Ghidelli, M.; Gondoni, P. [Dipartimento di Energia and NEMAS, Center for Nanoengineered Materials and Surfaces, Politecnico di Milano, via Ponzio 34/3, I-20133 Milano (Italy); Casari, C. S.; Li Bassi, A. [Dipartimento di Energia and NEMAS, Center for Nanoengineered Materials and Surfaces, Politecnico di Milano, via Ponzio 34/3, I-20133 Milano (Italy); Center for Nano Science and Technology PoliMI, Istituto Italiano di Tecnologia, Via Pascoli 70/3, I-20133 Milano (Italy)

    2014-02-21

    In this work we present a detailed Raman scattering investigation of zinc oxide and aluminum-doped zinc oxide (AZO) films characterized by a variety of nanoscale structures and morphologies and synthesized by pulsed laser deposition under different oxygen pressure conditions. The comparison of Raman spectra for pure ZnO and AZO films with similar morphology at the nano/mesoscale allows to investigate the relation between Raman features (peak or band positions, width, relative intensity) and material properties such as local structural order, stoichiometry, and doping. Moreover Raman measurements with three different excitation lines (532, 457, and 325?nm) point out a strong correlation between vibrational and electronic properties. This observation confirms the relevance of a multi-wavelength Raman investigation to obtain a complete structural characterization of advanced doped oxide materials.

  13. Thermodynamic and nonstoichiometric behavior of the lead-doped and lead-free Bi-2212 systems

    SciTech Connect (OSTI)

    Tetenbaum, M.; Hash, M.; Tani, B.S.; Luo, J.S.; Maroni, V.A.

    1997-02-01

    EMF measurements of oxygen fugacities as a function of stoichiometry were made on pb-doped and Pb-free superconducting ceramics at 700-815 C using oxygen titration. Equations of oxygen partial pressure vs composition and temperature were derived from the EMF measurements. Thermodynamic assessments of the partial molar quantities {Delta}{bar H}(O{sub 2}) and {Delta}{bar S}(O{sub 2}) for Pb-doped Bi- 2212 and Pb-free Bi-2212 indicate that the solid-state decomposition of these Bi cuprates at low oxygen partial pressure can be represented by the diphasic CuO-Cu{sub 2}O system. Comparison of these results with Pb-doped Bi-2223 in powder and silver sheath form is presented.

  14. Evaluation of the physi- and chemisorption of hydrogen in alkali (Na, Li) doped fullerenes

    SciTech Connect (OSTI)

    Ward, Patrick; Teprovich, Jospeph A.; Compton, Robert; Affholter, Kathleen A; Schwartz, Viviane; Veith, Gabriel M; Zidan, Ragiay

    2015-01-01

    Alkali doped fullerenes synthesized by two different solvent assisted mixing techniques are compared for their hydrogen uptake activity. In this study we investigated the interaction of hydrogen with alkali doped fullerenes via physisorption. In addition, we present the first mass spectrometric evidence for the formation of C60H60 via chemisorption. Hydrogen physisorption isotherms up to 1 atm at temperatures ranging from 77-303 K were measured demonstrating an increase in hydrogen uptake versus pure C60 and increased isosteric heats of adsorption for the lithium doped fullerene Li12C60. However, despite these improvements the low amount of physisorbed hydrogen at 1 atm and 77 K in these materials suggests that fullerenes do not possess enough accessible surface area to effectively store hydrogen due to their close packed crystalline nature.

  15. Doping of GaN{sub 1-x}As{sub x} with high As content

    SciTech Connect (OSTI)

    Levander, A.X.; Novikov, S.V.; Liliental-Weber, Z.; dos Reis, R.; Dubon, O.D.; Wu, J.; Foxon, C.T.; Yu, K.M.; Walukiewicz, W.

    2011-09-22

    Recent work has shown that GaN{sub 1-x}As{sub x} can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN{sub 1-x}As{sub x} with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN{sub 1-x}As{sub x}.

  16. Evaluation of the physi- and chemisorption of hydrogen in alkali (Na, Li) doped fullerenes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ward, Patrick; Teprovich, Jospeph A.; Compton, Robert; Affholter, Kathleen A; Schwartz, Viviane; Veith, Gabriel M; Zidan, Ragiay

    2015-01-01

    Alkali doped fullerenes synthesized by two different solvent assisted mixing techniques are compared for their hydrogen uptake activity. In this study we investigated the interaction of hydrogen with alkali doped fullerenes via physisorption. In addition, we present the first mass spectrometric evidence for the formation of C60H60 via chemisorption. Hydrogen physisorption isotherms up to 1 atm at temperatures ranging from 77-303 K were measured demonstrating an increase in hydrogen uptake versus pure C60 and increased isosteric heats of adsorption for the lithium doped fullerene Li12C60. However, despite these improvements the low amount of physisorbed hydrogen at 1 atm and 77more » K in these materials suggests that fullerenes do not possess enough accessible surface area to effectively store hydrogen due to their close packed crystalline nature.« less

  17. The structural, electrical, and optical properties of hydrogenated chromium-doped CdO films

    SciTech Connect (OSTI)

    Dakhel, A.A.; Hamad, H.

    2013-12-15

    Cadmium oxide thin films doped with different amounts of chromium and annealed in hydrogen atmosphere have been grown on glass substrates by means of physical vapour deposition (PVD) method. The structural, electrical, and optical properties of the prepared Cr-doped CdO (CdO:Cr–H) films were systematically studied. The structural investigations show that the incorporated Cr ions mainly occupied locations in interstitial positions of CdO lattice. The bandgap engineer by Cr incorporation and hydrogenation were studied. The variations of the electrical parameters of CdO:Cr–H films with Cr incorporation and hydrogenation were investigated. It was established that among the investigated samples, the largest mobility and conductivity were measured with 1.5%:Cr–H film. Therefore, hydrogenated CdO:Cr films can be effectively used in different applications of near infrared-transparent-conducting-oxide (NIR-TCO). - Graphical abstract: Optoelectronic properties of synthesised chromium-doped CdO thin films. It was established that the largest mobility (53.4 cm{sup 2}/V.s) and conductivity (2136.8 S/cm) were measured in 1.5%:Cr–H doped CdO film. Therefore, such films can be effectively used in near infrared-transparent-conducting-oxide (NIR-TCO). - Highlights: • The properties of CdO films annealed in H{sub 2} gas were systematically studied. • Cr{sup 3+} ions most likely occupied interstitial locations in CdO lattice and as donors. • Improvement of conductivity parameters with Cr doping and H annealing. • Bandgap narrowing observed with Cd-doping.

  18. Ion blistering of boron-doped silicon: The critical role of defect passivation

    SciTech Connect (OSTI)

    Desrosiers, N.; Giguere, A.; Moutanabbir, O.; Terreault, B.

    2005-12-05

    The microscopic mechanism of hydrogen ion blistering of silicon was investigated using Raman scattering spectroscopy and thermal desorption spectrometry. The data in B-doped Si({approx}10{sup -3}/{omega} cm) are particularly worth noting, since B doping at this level strongly reduces both the ion dose and the thermal budget required for blistering. In that case the Si-H stretch mode is found to be shifted markedly towards higher frequencies characteristic of highly passivated vacancies and internal surfaces. It is deduced that the degree of defect passivation is a most critical factor for blistering.

  19. Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation

    SciTech Connect (OSTI)

    Fukata, N.; Chen, J.; Sekiguchi, T.; Matsushita, S.; Oshima, T.; Uchida, N.; Murakami, K.; Tsurui, T.; Ito, S.

    2007-04-09

    Phosphorus (P) doping was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. At least three types of signals were observed by electron spin resonance (ESR) at 4.2 K. Phosphorus doping into substitutional sites of crystalline Si in SiNWs was demonstrated by the detection of an ESR signal with a g value of 1.998, which corresponds to conduction electrons in crystalline Si, and by an energy-dispersive x-ray spectroscopy spectrum of the P K{alpha} line. The ESR results also revealed the presence of defects. These defects were partially passivated by hydrogen and oxygen atoms.

  20. Evolution of quasiparticle states with and without a Zn impurity in doped

    Office of Scientific and Technical Information (OSTI)

    122 iron pnictides (Journal Article) | SciTech Connect Evolution of quasiparticle states with and without a Zn impurity in doped 122 iron pnictides Citation Details In-Document Search Title: Evolution of quasiparticle states with and without a Zn impurity in doped 122 iron pnictides Authors: Pan, Lihua ; Li, Jian ; Tai, Yuan-Yen ; Graf, Matthias J. ; Zhu, Jian-Xin ; Ting, C. S. Publication Date: 2014-10-01 OSTI Identifier: 1180664 Grant/Contract Number: AC52-06NA25396 Type: Publisher's

  1. Native point defects and doping in ZnGeN 2 (Journal Article) | DOE PAGES

    Office of Scientific and Technical Information (OSTI)

    Native point defects and doping in ZnGeN 2 This content will become publicly available on April 11, 2017 « Prev Next » Title: Native point defects and doping in ZnGeN 2 Authors: Skachkov, Dmitry ; Punya Jaroenjittichai, Atchara ; Huang, Ling-yi ; Lambrecht, Walter R. L. Publication Date: 2016-04-11 OSTI Identifier: 1246761 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal Information: Journal Volume: 93; Journal Issue: 15; Journal ID: ISSN 2469-9950

  2. Very fast doped LaBr.sub.3 scintillators and time-of-flight PET

    DOE Patents [OSTI]

    Shah, Kanai S.

    2006-10-31

    The present invention concerns very fast scintillator materials capable of resolving the position of an annihilation event within a portion of a human body cross-section. In one embodiment, the scintillator material comprises LaBr.sub.3 doped with cerium. Particular attention is drawn to LaBr.sub.3 doped with a quantity of Ce that is chosen for improving the timing properties, in particular the rise time and resultant timing resolution of the scintillator, and locational capabilities of the scintillator.

  3. Properties of a new average power Nd-doped phosphate laser glass

    SciTech Connect (OSTI)

    Payne, S.A.; Marshall, C.D.; Bayramian, A.J.; Wilke, G.D.; Hayden, J.S.

    1995-03-09

    The Nd-doped phosphate laser glass described herein can withstand 2.3 times greater thermal loading without fracture, compared to APG-1 (commercially-available average-power glass from Schott Glass Technologies). The enhanced thermal loading capability is established on the basis of the intrinsic thermomechanical properties and by direct thermally-induced fracture experiments using Ar-ion laser heating of the samples. This Nd-doped phosphate glass (referred to as APG-t) is found to be characterized by a 29% lower gain cross section and a 25% longer low-concentration emission lifetime.

  4. Laser properties of an improved average-power Nd-doped phosphate glass

    SciTech Connect (OSTI)

    Payne, S.A.; Marshall, C.D.; Bayramian, A.J.

    1995-03-15

    The Nd-doped phosphate laser glass described herein can withstand 2.3 times greater thermal loading without fracture, compared to APG-1 (commercially-available average-power glass from Schott Glass Technologies). The enhanced thermal loading capability is established on the basis of the intrinsic thermomechanical properties (expansion, conduction, fracture toughness, and Young`s modulus), and by direct thermally-induced fracture experiments using Ar-ion laser heating of the samples. This Nd-doped phosphate glass (referred to as APG-t) is found to be characterized by a 29% lower gain cross section and a 25% longer low-concentration emission lifetime.

  5. A facile preparation and the luminescent properties of Eu{sup 3+}-doped

    Office of Scientific and Technical Information (OSTI)

    Y{sub 2}O{sub 2}SO{sub 4} nanopieces (Journal Article) | SciTech Connect A facile preparation and the luminescent properties of Eu{sup 3+}-doped Y{sub 2}O{sub 2}SO{sub 4} nanopieces Citation Details In-Document Search Title: A facile preparation and the luminescent properties of Eu{sup 3+}-doped Y{sub 2}O{sub 2}SO{sub 4} nanopieces Graphical abstract: - Highlights: * Y{sub 2}O{sub 2}SO{sub 4}:Eu{sup 3+} nanopieces were prepared via electrospinning followed by calcination. * The

  6. Ni, Fe Co-doped ZnO nanoparticles synthesized by solution combustion method

    SciTech Connect (OSTI)

    Dhiman, Pooja Chand, Jagdish Verma, S. Sarveena, Singh, M.

    2014-04-24

    This paper outlines the synthesis and characterization of Ni-Fe co-doped ZnO nanoparticles by facile solution combustion method. The structural characterization by XRD confirmed the phase purity of the samples. Surface morphology studied by scanning electron microscope revealed cubic type shape of grains. EDS analysis conformed the elemental composition. Higher value of DC electrical conductivity and less band gap for co-doped ZnO from UV-Vis studies confirmed the change in defect chemistry of ZnO Matrix.

  7. Performance and mix measurements of indirect drive Cu doped Be implosions

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Performance and mix measurements of indirect drive Cu doped Be implosions Citation Details In-Document Search Title: Performance and mix measurements of indirect drive Cu doped Be implosions Authors: Casey, D T ; Woods, T ; Smalyuk, V A ; Hurricane, O A ; Glebov, V Y ; Stoeckl, C ; Theobald, W ; Wallace, R ; Nikroo, A ; Shuldberg, C ; Wu, K J ; Frenje, J A ; Perez, F ; Landen, O L ; Remington, B ; Glendinning, G Publication Date: 2014-09-18 OSTI

  8. Publisher's Note: "Electrical spin injection in modulation-doped GaAs

    Office of Scientific and Technical Information (OSTI)

    from an in situ grown Fe/MgO layer" [Appl. Phys. Lett. 107, 102407 (2015)] (Journal Article) | SciTech Connect Publisher's Note: "Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer" [Appl. Phys. Lett. 107, 102407 (2015)] Citation Details In-Document Search Title: Publisher's Note: "Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer" [Appl. Phys. Lett. 107, 102407 (2015)] No abstract prepared.

  9. Native point defects and doping in ZnGeN 2 (Journal Article) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect SciTech Connect Search Results Journal Article: Native point defects and doping in ZnGeN 2 Citation Details In-Document Search This content will become publicly available on April 11, 2017 Title: Native point defects and doping in ZnGeN 2 Authors: Skachkov, Dmitry ; Punya Jaroenjittichai, Atchara ; Huang, Ling-yi ; Lambrecht, Walter R. L. Publication Date: 2016-04-11 OSTI Identifier: 1246761 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal

  10. Defect propagation in one-, two-, and three-dimensional compounds doped by

    Office of Scientific and Technical Information (OSTI)

    magnetic atoms (Journal Article) | SciTech Connect Defect propagation in one-, two-, and three-dimensional compounds doped by magnetic atoms Citation Details In-Document Search Title: Defect propagation in one-, two-, and three-dimensional compounds doped by magnetic atoms Inelastic neutron scattering experiments were performed to study manganese(II) dimer excitations in the diluted one-, two-, and three-dimensional compounds CsMnxMg1-xBr3, K2MnxZn1-xF4, and KMnxZn1-xF3 (x≤0.10),

  11. Doping evolution of the electronic structure in the single-layer cuprates

    Office of Scientific and Technical Information (OSTI)

    Bi2Sr2- delta: Comparison with other single-layer cuprates (Journal Article) | SciTech Connect Doping evolution of the electronic structure in the single-layer cuprates Bi2Sr2&#8722xLaxCuO6 delta: Comparison with other single-layer cuprates Citation Details In-Document Search Title: Doping evolution of the electronic structure in the single-layer cuprates Bi2Sr2&#8722xLaxCuO6 delta: Comparison with other single-layer cuprates We have performed angle-resolved photoemission and

  12. Plasmonic Figures of Merit in a Doped Graphene Sheet | MIT-Harvard Center

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for Excitonics Figures of Merit in a Doped Graphene Sheet May 15, 2014 at 2pm/36-428 Marco Polini NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore di Pisa MarcoPolini Abstract: "Dirac" plasmons are self-sustained density oscillations that occur in a doped graphene sheet. These collective modes have recently attracted enormous experimental interest for their potential use in plasmonic circuits. In this talk I will discuss the two most important figures of merit of

  13. Fermi arcs vs. fermi pockets in electron-doped perovskite iridates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    He, Junfeng; Hafiz, H.; Mion, Thomas R.; Hogan, T.; Dhital, C.; Chen, X.; Lin, Qisen; Hashimoto, M.; Lu, D. H.; Zhang, Y.; et al

    2015-02-23

    We report on an angle resolved photoemission (ARPES) study of bulk electron-doped perovskite iridate, (Sr1-xLax)₃Ir₂O₇. Fermi surface pockets are observed with a total electron count in keeping with that expected from La substitution. Depending on the energy and polarization of the incident photons, these pockets show up in the form of disconnected “Fermi arcs”, reminiscent of those reported recently in surface electron-doped Sr₂IrO₄. Our observed spectral variation is consistent with the coexistence of an electronic supermodulation with structural distortion in the system.

  14. High-Quality Manganese-Doped Zinc Sulfide Quantum Rods with Tunable

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Dual-Color and Multiphoton Emissions High-Quality Manganese-Doped Zinc Sulfide Quantum Rods with Tunable Dual-Color and Multiphoton Emissions Authors: Deng, Z., Tong, L., Flores, M., Lin, S., Cheng, J.-X., Yan, H., and Liu, Y. Title: High-Quality Manganese-Doped Zinc Sulfide Quantum Rods with Tunable Dual-Color and Multiphoton Emissions Source: Journal of the American Chemical Society Year: 2011 Volume: 133 Pages: 5389-5396 ABSTRACT: We report a simple, fast and green phosphine-free

  15. Doping of TiO 2 Polymorphs for Altered Optical and Photocatalytic Properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Nie, Xiliang; Zhuo, Shuping; Maeng, Gloria; Sohlberg, Karl

    2009-01-01

    Tmore » his paper reviews recent investigations of the influence of dopants on the optical properties of TiO 2 polymorphs.he common undoped polymorphs of TiO 2 are discussed and compared.he results of recent doping efforts are tabulated, and discussed in the context of doping by elements of the same chemical group. Dopant effects on the band gap and photocatalytic activity are interpreted with reference to a simple qualitative picture of the TiO 2 electronic structure, which is supported with first-principles calculations.« less

  16. A first-principles study of the effect of charge doping on the 1D

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    polymerization of C60 | Center for Gas SeparationsRelevant to Clean Energy Technologies | Blandine Jerome first-principles study of the effect of charge doping on the 1D polymerization of C60 Previous Next List R Poloni, A San Miguel and M V Fernandez-Serra, Science 336 (6084), 1018 (2012) DOI:10.1088/0953-8984/24/9/095501 Poloni121 Abstract: We study the interplay between charge doping and intermolecular distance in the polymerization of C60 fullerene chains by means of density functional

  17. Charge carrier transport and separation in pristine and nitrogen-doped graphene nanowiggle heterostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lherbier, Aurélien; Liang, Liangbo; Charlier, Jean -Christophe; Meunier, Vincent

    2015-09-03

    Electronic structure methods are combined into a multiscale framework to investigate the electronic transport properties of recently synthesized pristine and nitrogen-doped graphene nanowiggles and their heterojunctions deposited on a substrate. The real-space Kubo-Greenwood transport calculations reveal that charge carrier mobilities reach values up to 1,000 cm2 V–1 s–1 as long as the amount of substrate impurities is sufficiently low. Owing to their type-II band alignment, atomically precise heterostructures between pristine and N-doped graphene nanowiggles are predicted to be excellent candidates for charge carrier separation devices with potential in photoelectric and photocatalytic water splitting applications.

  18. Mid infrared optical properties of Ge/Si quantum dots with different doping level

    SciTech Connect (OSTI)

    Sofronov, A. N.; Firsov, D. A.; Vorobjev, L. E.; Shalygin, V. A.; Panevin, V. Yu.; Vinnichenko, M. Ya.; Tonkikh, A. A.; Danilov, S. N.

    2013-12-04

    Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.

  19. Doping ofTiO2Polymorphs for Altered Optical and Photocatalytic Properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Nie, Xiliang; Zhuo, Shuping; Maeng, Gloria; Sohlberg, Karl

    2009-01-01

    This paper reviews recent investigations of the influence of dopants on the optical properties ofTiO2polymorphs. The common undoped polymorphs ofTiO2are discussed and compared. The results of recent doping efforts are tabulated, and discussed in the context of doping by elements of the same chemical group. Dopant effects on the band gap and photocatalytic activity are interpreted with reference to a simple qualitative picture of theTiO2electronic structure, which is supported with first-principles calculations.

  20. Time-reversal-invariant topological superconductivity in n -doped BiH

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Time-reversal-invariant topological superconductivity in n -doped BiH Citation Details In-Document Search Title: Time-reversal-invariant topological superconductivity in n -doped BiH Authors: Yang, Fan ; Liu, Cheng-Cheng ; Zhang, Yu-Zhong ; Yao, Yugui ; Lee, Dung-Hai Publication Date: 2015-04-23 OSTI Identifier: 1178596 Grant/Contract Number: AC02-05CH11231 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal

  1. Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor

    SciTech Connect (OSTI)

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Hlil, E. K.; Stadnyk, Yu. V.; Budgerak, S. M.

    2011-07-15

    The crystal structure, the distribution of electron density, and the energy, kinetic, and magnetic properties of the n-TiNiSn intermetallic semiconductor are investigated. It is shown that a priori doping of n-TiNiSn with donors originates from partial, up to 0.5 at %, redistribution of Ti and Ni atoms in crystallographic sites of Ti atoms. The correlation is established between the donor concentration, amplitude of modulation of the continuous energy bands, and degree of filling of low-scale fluctuation potential wells with charge carriers. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and compensated semiconductor.

  2. Method for Improving Mg Doping During Group-III Nitride MOCVD

    DOE Patents [OSTI]

    Creighton, J. Randall; Wang, George T.

    2008-11-11

    A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.

  3. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot; Luthra, Krishan Lal

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  4. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot; Luthra, Krishan Lal

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  5. Metal-doped organic foam and method of making same. [Patent application

    DOE Patents [OSTI]

    Rinde, J.A.

    Organic foams having a low density and very small cell size and method for producing same in either a metal-loaded or unloaded (nonmetal loaded) form are described. Metal-doped foams are produced by soaking a polymer gel in an aqueous solution of desired metal salt, soaking the gel successively in a solvent series of decreasing polarity to remove water from the gel and replace it with a solvent of lower polarity with each successive solvent in the series being miscible with the solvents on each side and being saturated with the desired metal salt, and removing the last of the solvents from the gel to produce the desired metal-doped foam having desired density cell size, and metal loading. The unloaded or metal-doped foams can be utilized in a variety of applications requiring low density, small cell size foam. For example, rubidium-doped foam made in accordance with the invention has utility in special applications, such as in x-ray lasers.

  6. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect (OSTI)

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  7. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOE Patents [OSTI]

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  8. Electrical and gas sensing properties of self-aligned copper-doped zinc oxide nanoparticles

    SciTech Connect (OSTI)

    Sonawane, Yogesh S.; Kanade, K.G.; Kale, B.B. Aiyer, R.C.

    2008-10-02

    Electrical and gas sensing properties of nanocrystalline ZnO:Cu, having Cu X wt% (X = 0.0, 0.5, 1.0, and 1.5) in ZnO, in the form of pellet were investigated. Copper chloride and zinc acetate were used as precursors along with oxalic acid as a precipitating reagent in methanol. Material characterization was done by X-ray diffraction (XRD), scanning electron microscopy (SEM), field emission scanning electron microscopy (FE-SEM) and inductive coupled plasma with optical emission spectrometry (ICP-OES). FE-SEM showed the self-aligned Cu-doped ZnO nano-clusters with particles in the range of 40-45 nm. The doping of 0.5% of copper changes the electrical conductivity by an order of magnitude whereas the temperature coefficient of resistance (TCR) reduces with increase in copper wt% in ZnO. The material has shown an excellent sensitivity for the H{sub 2}, LPG and CO gases with limited temperature selectivity through the optimized operating temperature of 130, 190 and 220 deg. C for H{sub 2}, LPG and CO gases, respectively at 625 ppm gas concentration. The %SF was observed to be 1460 for H{sub 2} at 1% Cu doping whereas the 0.5% Cu doping offered %SF of 950 and 520 for CO and LPG, respectively. The response and recovery time was found to be 6 to 8 s and 16 s, respectively.

  9. Hydrogen storage material and process using graphite additive with metal-doped complex hydrides

    DOE Patents [OSTI]

    Zidan, Ragaiy; Ritter, James A.; Ebner, Armin D.; Wang, Jun; Holland, Charles E.

    2008-06-10

    A hydrogen storage material having improved hydrogen absorbtion and desorption kinetics is provided by adding graphite to a complex hydride such as a metal-doped alanate, i.e., NaAlH.sub.4. The incorporation of graphite into the complex hydride significantly enhances the rate of hydrogen absorbtion and desorption and lowers the desorption temperature needed to release stored hydrogen.

  10. Negative differential resistance devices by using N-doped graphene nanoribbons

    SciTech Connect (OSTI)

    Huang, Jing E-mail: liqun@ustc.edu.cn; Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 ; Wang, Weiyi; Li, Qunxiang E-mail: liqun@ustc.edu.cn; Yang, Jinlong; Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026

    2014-04-28

    Recently, extensive efforts have been devoted to the investigations of negative differential resistance (NDR) behavior in graphene. Here, by performing fully self-consistent density functional theory calculations combined with non-equilibrium Green's function technique, we investigate the transport properties of three molecules from conjugated molecule, one-dimension alkane chain, and single molecule magnet, which are sandwiched between two N-doped zigzag and armchair graphene nanoribbons (GNRs). We observe robust NDR effect in all examined molecular junctions including benzene, alkane, and planar four-coordinated Fe complex. Through the analyses of the calculated electronic structures and the bias-dependent transmission coefficients, we find that the narrow density of states of N-doped GNRs and the bias-dependent effective coupling between the discrete frontier molecular orbitals and the subbands of N-doped GNRs are responsible for the observed NDR phenomenon. These theoretical findings imply that N-doped GNRs hold great potential for building NDR devices based on various molecules.

  11. Hybrid density functional theory description of N- and C-doping of NiO

    SciTech Connect (OSTI)

    Nolan, Michael; Long, Run; English, Niall J.; Mooney, Damian A.

    2011-06-14

    The large intrinsic bandgap of NiO hinders its potential application as a photocatalyst under visible-light irradiation. In this study, we have performed first-principles screened exchange hybrid density functional theory with the HSE06 functional calculations of N- and C-doped NiO to investigate the effect of doping on the electronic structure of NiO. C-doping at an oxygen site induces gap states due to the dopant, the positions of which suggest that the top of the valence band is made up primarily of C 2p-derived states with some Ni 3d contributions, and the lowest-energy empty state is in the middle of the gap. This leads to an effective bandgap of 1.7 eV, which is of potential interest for photocatalytic applications. N-doping induces comparatively little dopant-Ni 3d interactions, but results in similar positions of dopant-induced states, i.e., the top of the valence band is made up of dopant 2p states and the lowest unoccupied state is the empty gap state derived from the dopant, leading to bandgap narrowing. With the hybrid density functional theory (DFT) results available, we discuss issues with the DFT corrected for on-site Coulomb description of these systems.

  12. Manganese Doping of Magnetic Iron Oxide Nanoparticles: Tailoring Surface Reactivity for a Regenerable Heavy Metal Sorbent

    SciTech Connect (OSTI)

    Warner, Cynthia L.; Chouyyok, Wilaiwan; Mackie, Katherine E.; Neiner, Doinita; Saraf, Laxmikant; Droubay, Timothy C.; Warner, Marvin G.; Addleman, Raymond S.

    2012-02-28

    A method for tuning the analyte affinity of magnetic, inorganic nanostructured sorbents for heavy metal contaminants is described. The manganese-doped iron oxide nanoparticle sorbents have a remarkably high affinity compared to the precursor material. Sorbent affinity can be tuned toward an analyte of interest simply by adjustment of the dopant quantity. The results show that following the Mn doping process there is a large increase in affinity and capacity for heavy metals (i.e., Co, Ni, Zn, As, Ag, Cd, Hg, and Tl). Capacity measurements were carried out for the removal of cadmium from river water and showed significantly higher loading than the relevant commercial sorbents tested for comparison. The reduction in Cd concentration from 100 ppb spiked river water to 1 ppb (less than the EPA drinking water limit of 5 ppb for Cd) was achieved following treatment with the Mn-doped iron oxide nanoparticles. The Mn-doped iron oxide nanoparticles were able to load 1 ppm of Cd followed by complete stripping and recovery of the Cd with a mild acid wash. The Cd loading and stripping is shown to be consistent through multiple cycles with no loss of sorbent performance.

  13. Solid State Theory of Photovoltaic Materials: Nanoscale Grain Boundaries and Doping CIGS

    SciTech Connect (OSTI)

    Zunger, A

    2005-01-01

    We use modern first-principles electronic structure theory to investigate (1) why are grain boundaries in chalcopyrites passive; (2) can chalcopyrites be doped by transition metals, and; (3) can hot electrons and carrier multiplication be efficient in quantum-dot solar cells.

  14. Ferromagnetic interactions and martensitic transformation in Fe doped Ni-Mn-In shape memory alloys

    SciTech Connect (OSTI)

    Lobo, D. N.; Priolkar, K. R.; Emura, S.; Nigam, A. K.

    2014-11-14

    The structure, magnetic, and martensitic properties of Fe doped Ni-Mn-In magnetic shape memory alloys have been studied by differential scanning calorimetry, magnetization, resistivity, X-ray diffraction (XRD), and EXAFS. While Ni{sub 2}MnIn{sub 1?x}Fe{sub x} (0???x???0.6) alloys are ferromagnetic and non martensitic, the martensitic transformation temperature in Ni{sub 2}Mn{sub 1.5}In{sub 1?y}Fe{sub y} and Ni{sub 2}Mn{sub 1.6}In{sub 1?y}Fe{sub y} increases for lower Fe concentrations (y???0.05) before decreasing sharply for higher Fe concentrations. XRD analysis reveals presence of cubic and tetragonal structural phases in Ni{sub 2}MnIn{sub 1?x}Fe{sub x} at room temperature with tetragonal phase content increasing with Fe doping. Even though the local structure around Mn and Ni in these Fe doped alloys is similar to martensitic Mn rich Ni-Mn-In alloys, presence of ferromagnetic interactions and structural disorder induced by Fe affect Mn-Ni-Mn antiferromagnetic interactions resulting in suppression of martensitic transformation in these Fe doped alloys.

  15. Effect of Er doping on the structural and magnetic properties of cobalt-ferrite

    SciTech Connect (OSTI)

    Prathapani, Sateesh; Vinitha, M.; Das, D.; Jayaraman, T. V.

    2014-05-07

    Nanocrystalline particulates of Er doped cobalt-ferrites CoFe{sub (2−x)}Er{sub x}O{sub 4} (0 ≤ x ≤ 0.04), were synthesized, using sol-gel assisted autocombustion method. Co-, Fe-, and Er- nitrates were the oxidizers, and malic acid served as a fuel and chelating agent. Calcination (400–600 °C for 4 h) of the precursor powders was followed by sintering (1000 °C for 4 h) and structural and magnetic characterization. X-ray diffraction confirmed the formation of single phase of spinel for the compositions x = 0, 0.01, and 0.02; and for higher compositions an additional orthoferrite phase formed along with the spinel phase. Lattice parameter of the doped cobalt-ferrites was higher than that of pure cobalt-ferrite. The observed red shift in the doped cobalt-ferrites indicates the presence of induced strain in the cobalt-ferrite matrix due to large size of the Er{sup +3} compared to Fe{sup +3}. Greater than two-fold increase in coercivity (∼66 kA/m for x = 0.02) was observed in doped cobalt-ferrites compared to CoFe{sub 2}O{sub 4} (∼29 kA/m)

  16. Magnetic and structural properties of Zn doped MnV{sub 2}O{sub 4}

    SciTech Connect (OSTI)

    Shahi, Prashant; Shukla, K. K.; Singh, Rahul; Chatterjee, Sandip; Das, A.; Ghosh, A. K.; Nigam, A. K.

    2014-04-24

    The magnetization, Neutron diffraction and X-ray diffraction of Zn doped MnV{sub 2}O{sub 4} as a function of temperature have been measured. It has been observed, with increase of Zn the non-linear orientation of Mn spins with the V spins will decrease which effectively decrease the structural transition temperature more rapidly than Curie Temperature.

  17. Tuning magnetism of monolayer MoS{sub 2} by doping vacancy and applying strain

    SciTech Connect (OSTI)

    Zheng, Huiling; Yang, Baishun; Han, Ruilin; Du, Xiaobo; Yan, Yu; Wang, Dingdi

    2014-03-31

    In view of important role of inducing and manipulating the magnetism in two-dimensional materials for the development of low-dimensional spintronic devices, the influences of strain on electronic structure and magnetic properties of commonly observed vacancies doped monolayer MoS{sub 2} are investigated using first-principles calculations. It is shown that unstrained V{sub S}, V{sub S2}, and V{sub MoS3} doped monolayer MoS{sub 2} systems are nonmagnetic, while the ground state of unstrained V{sub MoS6} doped system is magnetic and the magnetic moment is contributed mainly by six Mo atoms around V{sub MoS6}. In particular, tensile strain can induce magnetic moments in V{sub S}, V{sub S2}, and V{sub MoS3} doped monolayer MoS{sub 2} due to the breaking of Mo–Mo metallic bonds around the vacancies, while the magnetization induced by V{sub MoS6} can be effectively manipulated by equibiaxial strain due to the change of Mo–Mo metallic bonds around V{sub MoS6} under strains.

  18. Zirconium doped nano-dispersed oxides of Fe, Al and Zn for destruction of warfare agents

    SciTech Connect (OSTI)

    Stengl, Vaclav; Houskova, Vendula; Bakardjieva, Snejana; Murafa, Nataliya; Marikova, Monika; Oplustil, Frantisek; Nemec, Tomas

    2010-11-15

    Zirconium doped nano dispersive oxides of Fe, Al and Zn were prepared by a homogeneous hydrolysis of the respective sulfate salts with urea in aqueous solutions. Synthesized metal oxide hydroxides were characterized using Brunauer-Emmett-Teller (BET) surface area and Barrett-Joiner-Halenda porosity (BJH), X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM) and energy-dispersive X-ray microanalysis (EDX). These oxides were taken for an experimental evaluation of their reactivity with sulfur mustard (HD or bis(2-chloroethyl)sulfide), soman (GD or (3,3'-Dimethylbutan-2-yl)-methylphosphonofluoridate) and VX agent (S-[2-(diisopropylamino)ethyl]-O-ethyl-methylphosphonothionate). The presence of Zr{sup 4+} dopant can increase both the surface area and the surface hydroxylation of the resulting doped oxides, decreases their crystallites' sizes thereby it may contribute in enabling the substrate adsorption at the oxide surface thus it can accelerate the rate of degradation of warfare agents. Addition of Zr{sup 4+} converts the product of the reaction of ferric sulphate with urea from ferrihydrite to goethite. We found out that doped oxo-hydroxides Zr-FeO(OH) - being prepared by a homogeneous hydrolysis of ferric and zirconium oxo-sulfates mixture in aqueous solutions - exhibit a comparatively higher degradation activity towards chemical warfare agents (CWAs). Degradation of soman or VX agent on Zr-doped FeO(OH) containing ca. 8.3 wt.% of zirconium proceeded to completion within 30 min.

  19. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    SciTech Connect (OSTI)

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  20. Highly tunable magnetism in silicene doped with Cr and Fe atoms under isotropic and uniaxial tensile strain

    SciTech Connect (OSTI)

    Zheng, Rui; Ni, Jun; Chen, Ying

    2015-12-28

    We have investigated the magnetic properties of silicene doped with Cr and Fe atoms under isotropic and uniaxial tensile strain by the first-principles calculations. We find that Cr and Fe doped silicenes show strain-tunable magnetism. (1) The magnetism of Cr and Fe doped silicenes exhibits sharp transitions from low spin states to high spin states by a small isotropic tensile strain. Specially for Fe doped silicene, a nearly nonmagnetic state changes to a high magnetic state by a small isotropic tensile strain. (2) The magnetic moments of Fe doped silicene also show a sharp jump to ∼2 μ{sub B} at a small threshold of the uniaxial strain, and the magnetic moments of Cr doped silicene increase gradually to ∼4 μ{sub B} with the increase of uniaxial strain. (3) The electronic and magnetic properties of Cr and Fe doped silicenes are sensitive to the magnitude and direction of the external strain. The highly tunable magnetism may be applied in the spintronic devices.

  1. Dielectric, ferroelectric and piezoelectric properties of Nb{sup 5+} doped BCZT ceramics

    SciTech Connect (OSTI)

    Parjansri, Piewpan; Intatha, Uraiwan; Eitssayeam, Sukum

    2015-05-15

    Highlights: • Average grain size of BCZT ceramic decreased with the increasing Nb{sup 5+} doping. • Dielectric constant value is enhanced with Nb{sup 5+} doping. • Dielectric loss of BCZT − x Nb{sup 5+} ceramics was less than 0.03 at room temperature (1 kHz). • Piezoelectric coefficient decreased with the increasing Nb{sup 5+} doping. • The relaxation behavior is enhanced with the doping of Nb{sup 5+}. - Abstract: This work investigated the electrical properties of Nb{sup 5+} (0.0–1.0 mol%) doped with Ba{sub 0.90}Ca{sub 0.10}Zr{sub 0.10}Ti{sub 0.90}O{sub 3} while adding 1 mol% of Ba{sub 0.90}Ca{sub 0.10}Zr{sub 0.10}Ti{sub 0.90}O{sub 3} seeds. The mixed powder was ball milled for 24 h, calcined and sintered at 1200 °C for 2 h and 1450 °C for 4 h, respectively. The XRD patterns of the ceramic samples were investigated by X-ray diffraction. The electrical properties of ceramics were measured and the results indicated that all samples show a pure perovskite phase with no secondary phase. Density and average grain size values were in the range of 5.60–5.71 g/cm{sup 3} and 12.62–1.86 μm, respectively. The highest dielectric constant, ϵ{sub r} at room temperature (1 kHz) was 4636 found at 1.0 mol% Nb. The dielectric loss, tan δ was less than 0.03 for all samples at room temperature (1 kHz). Other electrical properties, P{sub r}, d{sub 33} and k{sub p} values were decreased with Nb doped relates to the decreasing grain size in BCZT ceramics. Moreover, the degrees of phase transition diffuseness and relaxation behavior were observed in the higher Nb doping.

  2. Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

    SciTech Connect (OSTI)

    Chen, Xi; Salta, Daniel; Zhang, Libin [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Zhou, Jianshi; Goodenough, John B.; Shi, Li [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2013-11-07

    Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8??10{sup 21} and 2.2??10{sup 21}?cm{sup ?3} measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} with y?=?0.035 varies approximately as T{sup ?3/2} above 200?K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823?K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} samples with high Ge concentration of y?=?0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823?K and accounts for about 12% of the total thermal conductivity at about 800?K.

  3. A comparative study of optical absorption and photocatalytic properties of nanocrystalline single-phase anatase and rutile TiO{sub 2} doped with transition metal cations

    SciTech Connect (OSTI)

    Kernazhitsky, L.; Shymanovska, V.; Gavrilko, T.; Naumov, V.; Kshnyakin, V.; Khalyavka, T.

    2013-02-15

    The effect of nanocrystalline TiO{sub 2} doping with transition metal cations (Cu{sup 2+}, Fe{sup 3+}, Co{sup 2+}, Cr{sup 3+}) on their optical absorption and photocatalytic properties was investigated. The obtained metal-doped TiO{sub 2} samples were characterized by X-ray diffraction, scanning electron microscopy, and UV-vis absorption spectroscopy. It is shown that doping effect on anatase (A) and rutile (R) properties is quite different, being much stronger and complicated on A than on R. Contrary to doped R, doped A revealed a significant red shift of the absorption edge along with the band gap narrowing. Photocatalytic activity of anatase increases upon doping in the order: Adoping in the series R>R/Co>R/Cu>R/Fe>R/Cr, indicating the inhibitory effect of impurity cations. This fact correlates with the decrease in the UV absorption of the doped rutile in the region of the Hg-lamp irradiation at 4.88 eV. - Graphical abstract: A red shift of the absorption edge of nanocrystalline single-phase anatase after doping with transition metal cations. Highlights: Black-Right-Pointing-Pointer Single-phase anatase and rutile powders surface-doped with transition metal cations. Black-Right-Pointing-Pointer Absorption edge and band gap of rutile do not change with surface doping. Black-Right-Pointing-Pointer Band gap of surface-doped anatase reduces being the lowest for A/Fe. Black-Right-Pointing-Pointer The surface-doping improves photocatalytic activity of anatase. Black-Right-Pointing-Pointer The surface-doping inhibits photocatalytic activity of rutile.

  4. Study of new states in visible light active W, N co-doped TiO{sub 2} photo catalyst

    SciTech Connect (OSTI)

    Sajjad, Ahmed Khan Leghari; Shamaila, Sajjad; Zhang, Jinlong

    2012-11-15

    Highlights: ? Visible light efficient W, N co-doped TiO{sub 2} photo catalysts are prepared by solgel. ? Oxygen vacancies are detected in the form of new linkages as N-Ti-O, N-W-O, Ti-O-N and W-O-N. ? W, N co-doped titania has new energy states which narrows the band gap effectively. ? Oxygen vacancies are proved to be the cause for high photo catalytic activity. ? W and N co-doping plays the major role to make the composite thermally stable. -- Abstract: The visible light efficient W, N co-doped TiO{sub 2} photo catalysts are prepared by solgel method. New linkages of N, W and O are formed as N-Ti-O, N-W-O, Ti-O-N and W-O-N. Electron paramagnetic resonance illustrates the presence of oxygen vacancies in W, N co-doped TiO{sub 2} acting as trapping agencies for electrons to produce active species. X-ray photoelectron spectroscopy confirms the presence of new energy states. New linkages and oxygen vacancies are proved to be the main cause for the improved photo catalytic performances. W, N co-doped TiO{sub 2} has new energy states which narrow the band gap effectively. W, N co-doped TiO{sub 2} is thermally stable and retains its anatase phase up to 900 C. 4.5% W, N co-doped TiO{sub 2} showed superior activity for the degradation of Rhodamine B and 2,4-dichlorophenol as compared to pure titania, Degussa P-25, traditional N-doped TiO{sub 2} and pure WO{sub 3}.

  5. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    DOE Patents [OSTI]

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  6. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-02-12

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013more » e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. As a result, the ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.« less

  7. Use of MgO doped with a divalent or trivalent metal cation for removing arsenic from water

    DOE Patents [OSTI]

    Moore, Robert C; Holt-Larese, Kathleen C; Bontchev, Ranko

    2013-08-13

    Systems and methods for use of magnesium hydroxide, either directly or through one or more precursors, doped with a divalent or trivalent metal cation, for removing arsenic from drinking water, including water distribution systems. In one embodiment, magnesium hydroxide, Mg(OH).sub.2 (a strong adsorbent for arsenic) doped with a divalent or trivalent metal cation is used to adsorb arsenic. The complex consisting of arsenic adsorbed on Mg(OH).sub.2 doped with a divalent or trivalent metal cation is subsequently removed from the water by conventional means, including filtration, settling, skimming, vortexing, centrifugation, magnetic separation, or other well-known separation systems. In another embodiment, magnesium oxide, MgO, is employed, which reacts with water to form Mg(OH).sub.2. The resulting Mg(OH).sub.2 doped with a divalent or trivalent metal cation, then adsorbs arsenic, as set forth above. The method can also be used to treat human or animal poisoning with arsenic.

  8. K and Mn co-doped BaCd{sub 2}As{sub 2}: A hexagonal structured...

    Office of Scientific and Technical Information (OSTI)

    K and Mn co-doped BaCdsub 2Assub 2: A hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance Citation Details In-Document Search Title: K and Mn ...

  9. Air stable n-doping of WSe{sub 2} by silicon nitride thin films with tunable fixed charge density

    SciTech Connect (OSTI)

    Chen, Kevin; Kiriya, Daisuke; Hettick, Mark; Tosun, Mahmut; Ha, Tae-Jun; Madhvapathy, Surabhi Rao; Desai, Sujay; Sachid, Angada; Javey, Ali

    2014-09-01

    Stable n-doping of WSe{sub 2} using thin films of SiN{sub x} deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiN{sub x} act to dope WSe{sub 2} thin flakes n-type via field-induced effect. The electron concentration in WSe{sub 2} can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiN{sub x} through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe{sub 2} junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe{sub 2} n-MOSFETs with a mobility of ?70 cm{sup 2}/V?s.

  10. In Situ One-Step Synthesis of Hierarchical Nitrogen-Doped Porous Carbon for High Performance Supercapacitors

    SciTech Connect (OSTI)

    Jeon, Ju Won; Sharma, Ronish; Meduri, Praveen; Arey, Bruce W.; Schaef, Herbert T.; Lutkenhaus, Jodie; Lemmon, John P.; Thallapally, Praveen K.; Nandasiri, Manjula I.; McGrail, B. Peter; Nune, Satish K.

    2014-05-28

    Electrochemical performance of the existing state-of-the art capacitors is not very high, key scientific barrier is that its charge storage mechanism wholly depends on adsorption of electrolyte on electrode. We present a novel method for the synthesis of nitrogen -doped porous carbons and address the drawback by precisely controlling composition and surface area. Nitrogen-doped porous carbon was synthesized using a self-sacrificial template technique without any additional nitrogen and carbon sources. They exhibited exceptionally high capacitance (239 Fg-1) due to additional pseudocapacitance originating from doped nitrogen. Cycling tests showed no obvious capacitance decay even after 10,000 cycles, which meets the requirement of commercial supercapacitors. Our method is simple and highly efficient for the production of large quantities of nitrogen-doped porous carbons.

  11. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  12. AREVA NP Cr{sub 2}O{sub 3}-doped fuel development for BWRs

    SciTech Connect (OSTI)

    Delafoy, C.; Dewes, P.; Miles, T.

    2007-07-01

    The search for improvements in nuclear fuel cycle economics results in increasing demands for fuel discharged burnup and reliability, plant maneuverability and power up-rating. To achieve these objectives without any reduction of safety margins, fuel design and materials that enable enhanced performance capabilities have been developed or are under investigations. Research on fuel pellets focuses on the modification of the microstructure to increase fission product retention and pellet mechanical compliance. Currently, production of the desired large grain viscoplastic UO{sub 2} fuel microstructures has been extensively investigated by AREVA NP through the use of doping elements. This track is nowadays a worldwide working field. In this area, AREVA NP has launched the development of a new UO{sub 2} fuel pellet obtained by optimum chromium oxide doping. The purpose of this paper is first to present the current results with the AREVA NP optimized chromia doped fuel and to discuss the key advantages in terms of fuel performance for BWR applications. In particular, the development relies on ramp testing results, fuel temperature and fission gas release values acquired at high burnup and high power levels. Second, the paper focuses on the qualification process implemented by AREVA NP to assess the margins of the optimized Cr{sub 2}O{sub 3}-doped UO{sub 2} fuel towards safety criteria at high burnup and the risk of PCI failure, as well as to develop calculation tools to support design. The driving force in this qualification plan is to gain the accurate knowledge of the optimized doped fuel behavior under normal, transient and anticipated accident conditions. To support this effort, irradiation campaigns are under progress in PWR and BWR plants to cover a wide range of existing operating conditions and to anticipate future demands. Considering only the BWR part, the program has successfully run since 2005 and is designed to obtain data up to high burnup, at least 70 GWd/tU. The aim is to define the range of operational conditions for application of chromia-doped fuel in combination with LTP2 non-liner cladding as an alternative to the present standard Fe-enhanced Zr liner cladding. (authors)

  13. Dielectric and photocatalytic properties of sulfur doped TiO{sub 2} nanoparticles prepared by ball milling

    SciTech Connect (OSTI)

    Jalalah, Mohammed; Faisal, M.; Bouzid, Houcine; Ismail, Adel A.; Al-Sayari, Saleh A.

    2013-09-01

    Graphical abstract: - Highlights: Designing of visible light responsive photocatalyst utilizing ball milling. Sulphur used as dopant in commercial TiO{sub 2} P25 at different atomic percentage. S doping resulted in an intense increase in absorption in the visible light region. Newly design photocatalyst exhibited excellent photocatalytic performance. 0.11 at.% S-doped TiO{sub 2} shows 3-times higher activity than that of TiO{sub 2} P25. - Abstract: Sulfur (S) doped commercial TiO{sub 2} P-25 has been achieved by changing the amount of thiourea using ball milling technique. The results of XRD clearly reveal biphasial anatase and rutile mixtures for all prepared samples and doping of S does not change the morphology of the TiO{sub 2}. The optical absorption edge of S-doped TiO{sub 2} was red shifted with indirect bandgap energy of 2.8 eV. The dielectric studies confirm that the dielectric constant of TiO{sub 2} increases after doping, however it becomes more conductive. Newly designed S-doped TiO{sub 2} photocatalysts exhibited excellent photocatalytic performance for the degradation of methylene blue (MB) under visible light. The overall photocatalytic activity of 0.11 at.% S-doped TiO{sub 2} was significantly 3-times higher than that of commercial TiO{sub 2} P-25 and complete degradation of MB has taken place after 90 min of irradiation under visible light while only 35% dye degraded when the reaction has been carried out in the presence of undoped TiO{sub 2}.

  14. Significant enhancement of compositional and superconducting homogeneity in Ti rather than Ta-doped Nb3Sn

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tarantini, C.; Sung, Z. -H.; Lee, P. J.; Ghosh, A. K.; Larbalestier, D. C.

    2016-01-25

    Nb3Sn wires are now very close to their final optimization but despite its classical nature, detailed understanding of the role of Ta and Ti doping in the A15 is not fully understood. Long thought to be essentially equivalent in their influence on Hc2, they were interchangeably applied. Here we show that Ti produces significantly more homogeneous chemical and superconducting properties. Despite Ta-doped samples having a slightly higher Tc onset in zero-field, they always have a wider Tc-distribution. In particular, whereas the Ta-doped A15 has a Tc-distribution extending from 18 down to 5-6 K (the lowest expected Tc for the binarymore » A15 phase), the Ti-doped samples have no A15 phase with Tc below ~12 K. The much narrower Tc distribution in the Ti-doped samples has a positive effect on their in-field Tc-distribution too, leading to an extrapolated μ0Hc2(0) 2 Tesla larger than the Ta-doped one. Ti-doping also appears to be very homogeneous even when the Sn content is reduced in order to inhibit breakdown of the diffusion barriers in very high Jc conductors. As a result, the enhanced homogeneity of the Ti-doped samples appears to result from its assistance of rapid diffusion of Sn into the filaments and by its incorporation into the A15 phase interchangeably with Sn on the Sn sites of the A15 phase.« less

  15. A novel approach to prepare optically active ion doped luminescent materials via electron beam evaporation into ionic liquids

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Richter, K.; Lorbeer, C.; Mudring, A. -V.

    2014-11-10

    A novel approach to prepare luminescent materials via electron-beam evaporation into ionic liquids is presented which even allows doping of host lattices with ions that have a strong size mismatch. Thus, to prove this, MgF2 nanoparticles doped with Eu3+ were fabricated. The obtained nanoparticles featured an unusually high luminescence lifetime and the obtained material showed a high potential for application.

  16. Optical characterizations of doped silicon nanocrystals grown by co-implantation of Si and dopants in SiO₂

    SciTech Connect (OSTI)

    Frégnaux, M.; Khelifi, R.; Muller, D.; Mathiot, D.

    2014-10-14

    Co-implantation, with overlapping implantation projected ranges, of Si and doping species (P, As, and B) followed by a thermal annealing step is a viable route to form doped Si nanocrystals (NCs) embedded in silica (SiO₂). In this paper, we investigate optical characterizations of both doped and un-doped Si-NCs prepared by this method. The effective NC presence in the oxide layer and their crystallinity is verified by Raman spectrometry. Photoluminescence (PL) and PL excitation measurements reveal quantum confinement effects and a gradual PL quenching with increasing dopant concentrations. In un-doped NC, the measured Stokes shift remains constant and its value ~0.2 eV is almost twice the Si–O vibration energy. This suggests that a possible radiative recombination path is a fundamental transition assisted by a local phonon. PL lifetime investigations show that PL time-decays follow a stretched exponential. Using a statistical model for luminescence quenching, a typical NC diameter close to 2 nm is obtained for As- and P-doped samples, consistent with our previous atomic probe tomography (APT) analyses. APT also demonstrated that n-type dopant (P and As) are efficiently introduced in the NC core, whereas p-type dopant (B) are located at the NC/SiO₂ interface. This last observation could explain the failure of the luminescence-quenching model to determine NC size in B-doped samples. All together, these experimental observations question on possible different carrier recombination paths in P or As doped NC compared to B one's.

  17. La-doped ZnO nanoparticles: Simple solution-combusting preparation and applications in the wastewater treatment

    SciTech Connect (OSTI)

    Wu, Tingting; Ni, Yonghong; Ma, Xiang; Hong, Jianming

    2013-11-15

    Graphical abstract: La-doped ZnO nanoparticles have been successfully prepared by a simple solution combustion route and exhibit good adsorption for Cu and Pb ion from water systems. - Highlights: • La-doped ZnO nanoparticles were successfully prepared via a simple solution-combustion route. • The integration of La{sup 3+} ions into ZnO decreased the band-gap of ZnO nanoparticles. • La-doped ZnO nanoparticles could remove more Pb and Cu ions from water resources than undoped ZnO. - Abstract: La-doped ZnO nanoparticles have been successfully synthesized by a simple solution combustion method via employing a mixture of ethanol and ethyleneglycol (v/v = 60/40) as the solvent. Zinc acetate and oxygen gas in the atmosphere were used as zinc and oxygen sources, and La(NO{sub 3}){sub 3} as the doping reagent. The as-obtained product was characterized by means of powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy. Experiments showed that La-doped ZnO nanoparticles exhibited the higher capacities for the removal of Pb{sup 2+} and Cu{sup 2+} ions in water resource than undoped ZnO nanoparticles.

  18. The photoluminescence properties of Er{sup 3+}-doped ZrO{sub 2} nanotube arrays prepared by anodization

    SciTech Connect (OSTI)

    Wang, Xixin; Zhao, Jianling; Du, Peng; Guo, Limin; Xu, Xuewen; Tang, Chengchun

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ? Er{sup 3+}-doped ZrO{sub 2} nanotube arrays were prepared by anodization of ZrEr alloy. ? Small tetragonal zirconia crystallites are tended to be formed due to the doping of Er{sup 3+}. ? Under excitation at 317 nm, the ZrO{sub 2} nantube arrays have strongest photoluminescence intensity. -- Abstract: Er{sup 3+}-doped ZrO{sub 2} nanotube arrays were prepared by anodization of ZrEr alloy which was obtained by melting zirconium with 1.0 wt% erbium. The morphology, structure and photoluminescence properties were studied through scanning electron microscope, transmission electron microscope, X-ray diffraction and photoluminescence analyzer. X-ray diffraction results indicate that doping of Er{sup 3+} affects the crystal structure and grain size obviously and the Er{sup 3+}-doped samples tend to form small tetragonal grains. Photoluminescence analyses show that when Er{sup 3+}-doped zirconia nanotube arrays are excited at 317 nm, there are two strong photoluminescence emission peaks at 373 nm and 415 nm. When the excitation wavelength is 257 nm, a photoluminescence emission peak appears at 363 nm. Under same measurement conditions, emission peaks of the undoped ZrO{sub 2} nanotube arrays are very weak.

  19. Doped silicon nanocrystals from organic dopant precursor by a SiCl{sub 4}-based high frequency nonthermal plasma

    SciTech Connect (OSTI)

    Zhou, Shu; Ding, Yi; Nozaki, Tomohiro; Pi, Xiaodong

    2014-11-03

    Doped silicon nanocrystals (Si NCs) are of great interest in demanding low-cost nanodevices because of the abundance and nontoxicity of Si. Here, we demonstrate a cost-effective gas phase approach to synthesize phosphorous (P)-doped Si NCs in which the precursors used, i.e., SiCl{sub 4}, trimethyl phosphite (TMP), are both safe and economical. It is found that the TMP-enabled P-doping does not change the crystalline structure of Si NCs. The surface of P-doped Si NCs is terminated by both Cl and H. The Si–H bond density at the surface of P-doped Si NCs is found to be much higher than that of undoped Si NCs. The X-ray photoelectron spectroscopy and electron spin resonance results indicate that P atoms are doped into the substitutional sites of the Si-NC core and electrically active in Si NCs. Unintentional impurities, such as carbon contained in TMP, are not introduced into Si NCs.

  20. Graphene-doped polymer nanofibers for low-threshold nonlinear optical waveguiding

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Meng, Chao; Yu, Shao-Liang; Wang, Hong -Qing; Cao, Yue; Tong, Li -Min; Liu, Wei -Tao; Shen, Yuen -Ron

    2015-11-06

    Graphene-doped polymer nanofibers are fabricated by taper drawing of solvated polyvinyl alcohol doped with liquid-phase exfoliated graphene flakes. Nanofibers drawn this way typically have diameters measured in hundreds of nanometers and lengths in tens of millimeters; they show excellent uniformity and surface smoothness for optical waveguiding. Owing to their tightly confined waveguiding behavior, light–matter interaction in these subwavelength-diameter nanofibers is significantly enhanced. Using approximately 1350-nm-wavelength femto-second pulses, we demonstrate saturable absorption behavior in these nanofibers with a saturation threshold down to 0.25 pJ pulse-1 (peak power ~1.3 W). Additionally, using 1064-nm-wavelength nanosecond pulses as switching light, we show all-optical modulationmore » of a 1550-nm-wavelength signal light guided along a single nanofiber with a switching peak power of ~3.2 W.« less

  1. Low-temperature ferromagnetic properties in Co-doped Ag{sub 2}Se nanoparticles

    SciTech Connect (OSTI)

    Yang, Fengxia E-mail: xia9020@hust.edu.cn; Yu, Gen; Han, Chong; Liu, Tingting; Zhang, Duanming; Xia, Zhengcai E-mail: xia9020@hust.edu.cn

    2014-01-06

    β-Ag{sub 2}Se is a topologically nontrivial insulator. The magnetic properties of Co-doped Ag{sub 2}Se nanoparticles with Co concentrations up to 40% were investigated. The cusp of zero-field-cooling magnetization curves and the low-temperature hysteresis loops were observed. With increasing concentration of Co{sup 2+} ions mainly substituting Ag{sub I} sites in the Ag{sub 2}Se structure, the resistivity, Curie temperature T{sub c}, and magnetization increased. At 10 T, a sharp drop of resistance near T{sub c} was detected due to Co dopants. The ferromagnetic behavior in Co-doped Ag{sub 2}Se might result from the intra-layer ferromagnetic coupling and surface spin. This magnetic semiconductor is a promising candidate in electronics and spintronics.

  2. Method of making highly porous, stable aluminum oxides doped with silicon

    DOE Patents [OSTI]

    Khosravi-Mardkhe, Maryam; Woodfield, Brian F.; Bartholomew, Calvin H.; Huang, Baiyu

    2016-03-22

    The present invention relates to a method for making high surface area and large pore volume thermally stable silica-doped alumina (aluminum oxide) catalyst support and ceramic materials. The ability of the silica-alumina to withstand high temperatures in presence or absence of water and prevent sintering allows it to maintain good activity over a long period of time in catalytic reactions. The method of preparing such materials includes adding organic silicon reagents to an organic aluminum salt such as an alkoxide in a controlled quantity as a doping agent in a solid state, solvent deficient reaction followed by calcination. Alternatively, the organic silicon compound may be added after calcination of the alumina, followed by another calcination step. This method is inexpensive and simple. The alumina catalyst support material prepared by the subject method maintains high pore volumes, pore diameters and surface areas at very high temperatures and in the presence of steam.

  3. Defect reaction network in Si-doped InP : numerical predictions.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2013-10-01

    This Report characterizes the defects in the defect reaction network in silicon-doped, n-type InP deduced from first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si-doped InP until culminating in immobile reaction products. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon-related defects in the reaction network. This Report serves to extend the results for intrinsic defects in SAND 2012-3313: %E2%80%9CSimple intrinsic defects in InP: Numerical predictions%E2%80%9D to include Si-containing simple defects likely to be present in a radiation-induced defect reaction sequence.

  4. Graphene-doped polymer nanofibers for low-threshold nonlinear optical waveguiding

    SciTech Connect (OSTI)

    Meng, Chao; Yu, Shao-Liang; Wang, Hong -Qing; Cao, Yue; Tong, Li -Min; Liu, Wei -Tao; Shen, Yuen -Ron

    2015-11-06

    Graphene-doped polymer nanofibers are fabricated by taper drawing of solvated polyvinyl alcohol doped with liquid-phase exfoliated graphene flakes. Nanofibers drawn this way typically have diameters measured in hundreds of nanometers and lengths in tens of millimeters; they show excellent uniformity and surface smoothness for optical waveguiding. Owing to their tightly confined waveguiding behavior, light–matter interaction in these subwavelength-diameter nanofibers is significantly enhanced. Using approximately 1350-nm-wavelength femto-second pulses, we demonstrate saturable absorption behavior in these nanofibers with a saturation threshold down to 0.25 pJ pulse-1 (peak power ~1.3 W). Additionally, using 1064-nm-wavelength nanosecond pulses as switching light, we show all-optical modulation of a 1550-nm-wavelength signal light guided along a single nanofiber with a switching peak power of ~3.2 W.

  5. Anodic oxygen-transfer electrocatalysis at iron-doped lead dioxide electrodes

    SciTech Connect (OSTI)

    Feng, Jianren

    1994-10-01

    The research illustrated in this thesis was performed under the guidance of Professor Dennis C. Johnson beginning in March 1987. Chapter 2 concentrates on the development and electrocatalytic properties of iron-doped {beta}-PbO{sub 2} films on noble-metal substrates. Chapter 3 focuses attention on the preparation and characterization of iron-doped {beta}-PbO{sub 2} films on titanium substrates (Fe-PbO{sub 2}/Ti). Chapter 4 discusses anodic evolution of ozone at Fe-PbO{sub 2}/Ti electrodes. Chapter 5 describes electrochemical incineration of p-benzoquinone (BQ) at Fe-PbO{sub 2}/Ti electrodes. In addition, the Appendix includes another published paper which is a detailed study of {alpha}-PbO{sub 2} films deposited on various types of stainless steel substrates.

  6. Effect of nitrogen on the growth of boron doped single crystal diamond

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Karna, Sunil; Vohra, Yogesh

    2013-11-18

    Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower wavenumber regions. The change in the peak profilemore » of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. Furthermore, sharpening and upshift of Raman line was observed in the film that was grown in presence of nitrogen along with diborane in process gas.« less

  7. Sulfurization behavior of cerium doped uranium oxides by CS{sub 2}

    SciTech Connect (OSTI)

    Sato, Nobuaki; Kato, Shintaro; Kirishima, Akira; Tochiyama, Osamu

    2007-07-01

    For the recovery of nuclear materials from the spent nuclear fuel, the sulfide process has been proposed and the voloxidation of spent fuel and selective sulfurization rare-earth elements has been proposed. In this paper, cerium was used as a stand-in of plutonium and sulfurization behavior of cerium doped uranium dioxide by CS{sub 2} was studied. UO{sub 2} was oxidized to U{sub 3}O{sub 8} in air, while the Ce doped UO{sub 2} solid solution was formed in the presence of CeO{sub 2} by the heat treatment in air. The effect of heating time, temperature and the ratio of uranium to cerium on the formation of solid solution was analyzed. The results were also compared with those of thermodynamic consideration. (authors)

  8. Optical properties of Eu{sup 2+} doped antipervoskite fluoride single crystals

    SciTech Connect (OSTI)

    Daniel, D. Joseph; Ramasamy, P.; Nithya, R.; Madhusoodanan, U.

    2013-02-05

    Single crystals of pure and Eu{sup 2+} doped LiBaF{sub 3} have been grown from melt by using a vertical Bridgman-Stockbarger method. Absorption and luminescence spectra for pure and rare-earth-doped LiBaF{sub 3} were studied. At ambient conditions the photoluminescence spectra consisted of sharp lines peaked at {approx}359 nm attributed to the {sup 6}P7/2{yields}{sup 8}S7/2 transitions in the 4f{sub 7} electronic configuration of Eu{sup 2+} and a broad band extending between 370 and 450 nm attributed to Eu{sup 2+} trapped exciton recombination. The effect of {sup 60}Co gamma irradiation has also been investigated.

  9. Studies on optoelectronic properties of DC reactive magnetron sputtered chromium doped CdO thin films

    SciTech Connect (OSTI)

    Hymavathi, B. Rao, T. Subba; Kumar, B. Rajesh

    2014-10-15

    Cr doped CdO thin films were deposited on glass substrates by DC reactive magnetron sputtering method and subsequently annealed from 200 °C to 500 °C. X-ray diffraction analysis showed that the films exhibit (1 1 1) preferred orientation. The optical transmittance of the films increases from 64% to 88% with increasing annealing temperature. The optical band gap values were found to be decreased from 2.77 to 2.65 eV with the increase of annealing temperature. The decrease in optical band gap energy with increasing annealing temperature can be attributed to improvement in the crystallinity of the films and may also be due to quantum confinement effect. A minimum resistivity of 2.23 × 10{sup −4} Ω.cm and sheet resistance of 6.3 Ω/sq is obtained for Cr doped CdO film annealed at 500 °C.

  10. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  11. Ytterbium- and neodymium-doped vanadate laser hose crystals having the apatite crystal structure

    DOE Patents [OSTI]

    Payne, S.A.; Kway, W.L.; DeLoach, L.D.; Krupke, W.F.; Chai, B.H.T.

    1994-08-23

    Yb[sup 3+] and Nd[sup 3+] doped Sr[sub 5](VO[sub 4])[sub 3]F crystals serve as useful infrared laser media that exhibit low thresholds of oscillation and high slope efficiencies, and can be grown with high optical quality. These laser media possess unusually high absorption and emission cross sections, which provide the crystals with the ability to generate greater gain for a given amount of pump power. Many related crystals such as Sr[sub 5](VO[sub 4])[sub 3]F crystals doped with other rare earths, transition metals, or actinides, as well as the many structural analogs of Sr[sub 5](VO[sub 4])[sub 3]F, where the Sr[sup 2+] and F[sup [minus

  12. Ytterbium- and neodymium-doped vanadate laser hose crystals having the apatite crystal structure

    DOE Patents [OSTI]

    Payne, Stephen A.; Kway, Wayne L.; DeLoach, Laura D.; Krupke, William F.; Chai, Bruce H. T.

    1994-01-01

    Yb.sup.3+ and Nd.sup.3+ doped Sr.sub.5 (VO.sub.4).sub.3 F crystals serve as useful infrared laser media that exhibit low thresholds of oscillation and high slope efficiencies, and can be grown with high optical quality. These laser media possess unusually high absorption and emission cross sections, which provide the crystals with the ability to generate greater gain for a given amount of pump power. Many related crystals such as Sr.sub.5 (VO.sub.4).sub.3 F crystals doped with other rare earths, transition metals, or actinides, as well as the many structural analogs of Sr.sub.5 (VO.sub.4).sub.3 F, where the Sr.sup.2+ and F.sup.- ions are replaced by related chemical species, have similar properties.

  13. Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Qi; Bi, Cheng; Huang, Jinsong

    2015-05-06

    We demonstrated the efficiency of a solution-processed planar heterojunction organometallic trihalide perovskite solar cell can be increased to 17.5% through doping the hole transporting layer for reducing the resistivity. Doped Poly(triaryl amine) (PTAA) by 2,3,5,6-Tetrafluoro-7,7,8,8-Tetracyanoquinodimethane (F4-TCNQ) reduced device series resistance by three-folds, increasing the device fill factor to 74%, open circuit voltage to 1.09 V without sacrificing the short circuit current. As a result, this study reveals that the high resistivity of currently broadly applied polymer hole transport layer limits the device efficiency, and points a new direction to improve the device efficiency.

  14. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, Andr

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 ?cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  15. Half-metallic ferromagnetism in Cr-doped semiconducting Ge-chalcogenide: Density functional approach

    SciTech Connect (OSTI)

    Saini, Hardev S.; Singh, Mukhtiyar; Thakur, Jyoti; Kashyap, Manish K.

    2014-04-24

    A supercell approach has been used to calculate the electronic and magnetic properties of Cr-doped Ge chalcogenide, Ge{sub 1−x}Cr{sub x}Te (x = 0.25 and 0.125). The calculations have been performed using full potential Linear Augmented Plane Wave (FPLAPW) method within generalized gradient approximation (GGA) as exchange-correlation (XC) potential. The calculated results show that the doping of Cr induces the 100% spin polarization at Fermi level (EF) and showed the robust half metallic ferromagnetism in this compound. Thus, the compound at both dopant concentrations behave as dilute magnetic semiconductor (DMS) showing metallic property in majority and semiconducting for minority spin channels which is best suited for spintronic applications. The total magnetic moments of this compound are mainly due to Cr-d states present at E{sup F} with negligible contribution from electronic states of other atoms.

  16. Electronic and magnetic properties of Mo doped graphene; full potential approach

    SciTech Connect (OSTI)

    Thakur, Jyoti Kashyap, Manish K.; Singh, Mukhtiyar; Saini, Hardev S.

    2015-05-15

    The electronic and magnetic properties of Pristine and Mo doped Graphene have been calculated using WIEN2k implementation of full potential linearized augmented plane wave (FPLAPW) method based on Density Functional Theory (DFT). The exchange and correlation (XC) effects were taken into account by generalized gradient approximation (GGA). The calculated results show that Mo doping creates magnetism in Graphene by shifting the energy levels at E{sub F} and opens up a channel for Graphene to be used in real nanoscale device applications. The unpaired d-electrons of Mo atom are responsible for induced magnetism in Graphene. Magnetic ordering created in Graphene in this way makes it suitable for recording media, magnetic sensors, magnetic inks and spintronic devices.

  17. Ferromagnetism of manganese-doped indium tin oxide films deposited on polyethylene naphthalate substrates

    SciTech Connect (OSTI)

    Nakamura, Toshihiro; Isozaki, Shinichi; Tanabe, Kohei; Tachibana, Kunihide

    2009-04-01

    Mn-doped indium tin oxide (ITO) films were deposited on polyethylene naphthalate (PEN) substrates using radio-frequency magnetron sputtering. The magnetic, electrical, and optical properties of the films deposited on PEN substrates were investigated by comparing with the properties of films grown on glass substrates at the same growth conditions. Thin films on PEN substrates exhibited low electrical resistivity of the order of 10{sup -4} {omega} cm and high optical transmittance between 75% and 90% in the visible region. Ferromagnetic hysteresis loops were observed at room temperature for the samples grown on PEN substrates. Mn-doped ITO films can be one of the most promising candidates of transparent ferromagnetic materials for flexible spintronic devices.

  18. Intrinsic electron and hole bands in electron-doped cuprate superconductors

    SciTech Connect (OSTI)

    Xiang, T.

    2010-02-24

    We propose that the upper Hubbard band (electron-like) and the Zhang-Rice singlet band (holelike) are two essential components in describing low-energy excitations of electron-doped cuprate superconductors. We find that the gap between these two bands is significantly smaller than the charge-transfer gap measured by optics and is further reduced upon doping. This indicates that the charge fluctuation is strong and the system is in the intermediate correlation regime. A two-band model is derived. In the limit that the intraband and interband hopping integrals are equal to each other, this model is equivalent to the unconstrained t-J model with on-site Coulomb repulsions.

  19. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d,more » electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.« less

  20. Growth and optical properties of partially transparent Eu doped CaF{sub 2} ceramic

    SciTech Connect (OSTI)

    Ghosh, Manoranjan Sen, Shashwati Pitale, S. S. Goutam, U. K. Shinde, Seema Patra, G. D. Gadkari, S. C.

    2014-04-24

    Partially transparent ceramic of 2 at.% Eu doped CaF{sub 2} have been grown preferentially towards [111] direction. For this purpose, Eu doped CaF{sub 2} nanoparticles (size?12 nm) obtained by a low temperature solution growth method has been pressed at 1000C under vacuum. The preferentially grown ceramic shows 15% transparency within the visible range of spectrum. As confirmed by the X-ray diffraction result, the hot pressed ceramic exhibits reduced lattice volume than the nanopowder. It indicates Eu{sup 3+} as the dominant substituting ions at the Ca{sup 2+} sites of CaF{sub 2} lattice in the hot pressed ceramic material. It is corroborated by the photoluminescence results of hot pressed ceramic which shows strong red emission corresponding to Eu{sup 3+} sites. However, photoluminescence of nanopowder exhibits intense peak in the blue region of the spectrum which is characteristics of Eu2+ sites.

  1. High temperature dielectric relaxation anomaly of Y? and Mn? doped barium strontium titanate ceramics

    SciTech Connect (OSTI)

    Yan, Shiguang; Mao, Chaoliang E-mail: xldong@mail.sic.ac.cn; Wang, Genshui; Yao, Chunhua; Cao, Fei; Dong, Xianlin E-mail: xldong@mail.sic.ac.cn

    2014-10-14

    Relaxation like dielectric anomaly is observed in Y? and Mn? doped barium strontium titanate ceramics when the temperature is over 450 K. Apart from the conventional dielectric relaxation analysis method with Debye or modified Debye equations, which is hard to give exact temperature dependence of the relaxation process, dielectric response in the form of complex impedance, assisted with Cole-Cole impedance model corrected equivalent circuits, is adopted to solve this problem and chase the polarization mechanism in this paper. Through this method, an excellent description to temperature dependence of the dielectric relaxation anomaly and its dominated factors are achieved. Further analysis reveals that the exponential decay of the Cole distribution parameter n with temperature is confirmed to be induced by the microscopic lattice distortion due to ions doping and the interaction between the defects. At last, a clear sight to polarization mechanism containing both the intrinsic dipolar polarization and extrinsic distributed oxygen vacancies hopping response under different temperature is obtained.

  2. Engineering Gilbert damping by dilute Gd doping in soft magnetic Fe thin films

    SciTech Connect (OSTI)

    Zhang, W. Jiang, S.; Sun, L.; Wang, Y. K.; Zhai, Y.; Wong, P. K. J.; Wang, K.; Jong, M. P. de; Wiel, W. G. van der; Laan, G. van der

    2014-05-07

    By analyzing the ferromagnetic resonance linewidth, we show that the Gilbert damping constant in soft magnetic Fe thin films can be enhanced by ?6 times with Gd doping of up to 20%. At the same time, the magnetic easy axis remains in the film plane while the coercivity is strongly reduced after Gd inclusion. X-ray magnetic circular dichroism measurements reveal a strong increase in the orbital-to-spin moment ratio of Fe with increasing Gd concentration, in full agreement with the increase in the Gilbert damping obtained for these thin films. Combined with x-ray diffraction and vibrating sample magnetometry, the results demonstrate that the FeGd thin films with dilute Gd doping of up to 20% are promising candidates for spin-transfer-torque applications in soft magnetic devices, in which an enhanced damping is required.

  3. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  4. Defect reaction network in Si-doped InAs. Numerical predictions.

    SciTech Connect (OSTI)

    Schultz, Peter A.

    2015-05-01

    This Report characterizes the defects in the def ect reaction network in silicon - doped, n - type InAs predicted with first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si - doped InAs , until culminating in immobile reaction p roducts. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon - related defects in the reaction network. This Report serves to extend the results for the properties of intrinsic defects in bulk InAs as colla ted in SAND 2013 - 2477 : Simple intrinsic defects in InAs : Numerical predictions to include Si - containing simple defects likely to be present in a radiation - induced defect reaction sequence . This page intentionally left blank

  5. Impact of the modulation doping layer on the ? = 5/2 anisotropy

    SciTech Connect (OSTI)

    Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ? = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [110] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d, electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ? = 5/2 anisotropy.

  6. Enhancing optical gains in Si nanocrystals via hydrogenation and cerium ion doping

    SciTech Connect (OSTI)

    Wang, Dong-Chen; Li, Yan-Li; Song, Sheng-Chi; Guo, Wen-Ping; Lu, Ming; Chen, Jia-Rong

    2014-07-28

    We report optical gain enhancements in Si nanocrystals (Si-NCs) via hydrogenation and Ce{sup 3+} ion doping. Variable stripe length technique was used to obtain gains. At 0.3 W/cm{sup 2} pumping power density of pulsed laser, net gains were observed together with gain enhancements after hydrogenation and/or Ce{sup 3+} ion doping; gains after loss corrections were between 89.52 and 341.95 cm{sup −1}; and the photoluminescence (PL) lifetime was found to decrease with the increasing gain enhancement. At 0.04 W/cm{sup 2} power density, however, no net gain was found and the PL lifetime increased with the increasing PL enhancement. The results were discussed according to stimulated and spontaneous excitation and de-excitation mechanisms of Si-NCs.

  7. Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors

    SciTech Connect (OSTI)

    Zhu, Xiaoyang; Frisbie, C Daniel

    2012-08-13

    This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

  8. First principles DFT investigation of yttrium-doped graphene: Electronic structure and hydrogen storage

    SciTech Connect (OSTI)

    Desnavi, Sameerah; Chakraborty, Brahmananda; Ramaniah, Lavanya M.

    2014-04-24

    The electronic structure and hydrogen storage capability of Yttrium-doped grapheme has been theoretically investigated using first principles density functional theory (DFT). Yttrium atom prefers the hollow site of the hexagonal ring with a binding energy of 1.40 eV. Doping by Y makes the system metallic and magnetic with a magnetic moment of 2.11 ?{sub B}. Y decorated graphene can adsorb up to four hydrogen molecules with an average binding energy of 0.415 eV. All the hydrogen atoms are physisorbed with an average desorption temperature of 530.44 K. The Y atoms can be placed only in alternate hexagons, which imply a wt% of 6.17, close to the DoE criterion for hydrogen storage materials. Thus, this system is potential hydrogen storage medium with 100% recycling capability.

  9. Material and Doping Dependence of the Nodal and Antinodal Dispersion Renormalizations in Single- and Multilayer Cuprates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Johnston, S.; Lee, W. S.; Chen, Y.; Nowadnick, E. A.; Moritz, B.; Shen, Z.-X.; Devereaux, T. P.

    2010-01-01

    We presenmore » t a review of bosonic renormalization effects on electronic carriers observed from angle-resolved photoemission spectra in the cuprates. Specifically, we discuss the viewpoint that these renormalizations represent coupling of the electrons to the lattice and review how materials dependence, such as the number of Cu O 2 layers, and doping dependence can be understood straightforwardly in terms of several aspects of electron-phonon coupling in layered correlated materials.« less

  10. Role of microstructure and doping on the mechanical strength and toughness of polysilicon thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yagnamurthy, Sivakumar; Boyce, Brad L.; Chasiotis, Ioannis

    2015-03-24

    We investigated the role of microstructure and doping on the mechanical strength of microscale tension specimens of columnar grain and laminated polysilicon doped with different concentrations of phosphorus. The average tensile strengths of undoped columnar and laminated polysilicon specimens were 1.3 ± 0.1 and 2.45 ± 0.3 GPa, respectively. Heavy doping reduced the strength of columnar polysilicon specimens to 0.9 ± 0.1 GPa. On grounds of Weibull statistics, the experimental results from specimens with gauge sections of 1000 μm × 100 μm × 1 μm predicted quite well the tensile strength of specimens with gauge sections of 150 μm ×more » 3.75 μm × 1 μm, and vice versa. The large difference in the mechanical strength between columnar and laminated polysilicon specimens was due to sidewall flaws in columnar polysilicon, which were introduced during reactive ion etching (RIE) and were further exacerbated by phosphorus doping. Moreover, the removal of the large defect regions at the sidewalls of columnar polysilicon specimens via ion milling increased their tensile strength by 70%-100%, approaching the strength of laminated polysilicon, which implies that the two types of polysilicon films have comparable tensile strength. Measurements of the effective mode I critical stress intensity factor, KIC,eff, also showed that all types of polysilicon films had comparable resistance to fracture. Therefore, additional processing steps to eliminate the edge flaws in RIE patterned devices could result in significantly stronger microelectromechanical system components fabricated by conventional columnar polysilicon films.« less

  11. Magnetic fields and fluctuations in weakly Mn doped ZnGeP{sub 2}

    SciTech Connect (OSTI)

    Mengyan, P. W.; Lichti, R. L.; Baker, B. B.; Celebi, Y. G.; Catak, E.; Carroll, B. R.; Zawilski, K. T.; Schunemann, P. G.

    2014-02-21

    We report on our measurements of local and bulk magnetic features in weakly Mn doped ZnGeP{sub 2}. Utilizing muon spin rotation and relaxation measurements, we identify local ferromagnetic order and fluctuations in the local fields as sampled by an implanted muon (?{sup +}). We also report on field induced ferromagnetism occurring above the claimed paramagnetic to ferromagnetic transition temperature (T{sub c} = 312 K)

  12. Thermoelectric study of crossroads material MnTe via sulfur doping

    SciTech Connect (OSTI)

    Xie, Wenjie Populoh, Sascha; Sagarna, Leyre; Trottmann, Matthias; Ga??zka, Krzysztof; Xiao, Xingxing; Liu, Yufei; He, Jian; Weidenkaff, Anke

    2014-03-14

    Here, we report thermoelectric study of crossroads material MnTe via iso-electronic doping S on the Te-site. MnTe{sub 1-x}S{sub x} samples with nominal S content of x?=?0.00, 0.05, and 0.10 were prepared using a melt-quench method followed by pulverization and spark plasma sintering. The X-ray powder diffraction, scanning electron microscopy, and ZAF-corrected compositional analysis confirmed that S uniformly substitutes Te up to slightly over 2%. A higher content of S in the starting materials led to the formation of secondary phases. The thermoelectric properties of MnTe{sub 1-x}S{sub x} samples were characterized by means of Seebeck coefficient, electrical conductivity, and thermal conductivity measurements from 300?K to 773?K. Furthermore, Hall coefficient measurements and a single parabolic band model were used to help gain insights on the effects of S-doping on the scattering mechanism and the carrier effective mass. As expected, S doping not only introduced hole charge carriers but also created short-range defects that effectively scatter heat-carrying phonons at elevated temperatures. On the other hand, we found that S doping degraded the effective mass. As a result, the ZT of MnTe{sub 0.9}S{sub 0.1} was substantially enhanced over the pristine sample near 400?K, while the improvement of ZT became marginal at elevated temperatures. A ZT???0.65 at 773?K was obtained in all three samples.

  13. Stimulated emission and lasing in dye-doped organic thin films with Forster transfer

    SciTech Connect (OSTI)

    Berggren, M.; Dodabalapur, A.; Slusher, R.E.

    1997-10-01

    Optically pumped stimulated emission and lasing in thin films of an absorbing host 8-hydroxyquinolinato aluminum(Alq) doped with small amounts of the laser dye DCM II is observed. Forster transfer of the excitation from the Alq molecules to the DCM II molecules results in a high absorption coefficient at pump wavelength (337 nm) as well as low absorption loss at the emission wavelengths (610{endash}650 nm). {copyright} {ital 1997 American Institute of Physics.}

  14. Calculation of infrared plasma reflection spectra of inhomogeneously doped P-type gallium arsenide

    SciTech Connect (OSTI)

    CHEN Wei-xi; LI Guo-hua; NIU Jin-zhen; GUO Chang-zhi

    1982-01-01

    The influence of the surface concentration and concentration profile of free carriers, the layer thickness and free carrier concentration of the homogeneous substrate on the infrared plasma reflection spectra of inhomogeneously doped P-type GaAs layers is analyzed by computer solutions of differential equations for the optical admittance. Computed spectra are reported for four different profiles and several substrate concentrations. Methods for evaluation of the measured reflection spectra and the limitation of this technique are discussed.

  15. Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems

    SciTech Connect (OSTI)

    Ehsani, H.; Bhat, I.; Borrego, J.; Gutmann, R.; Brown, E.; Dzeindziel, R.; Freeman, M.; Choudhury, N.

    1995-07-01

    Heavily doped Si was investigated for use as spectral control filter in thermal photovoltaic (TPV) system. These filters should reflect radiation at 4 {micro}m and above and transmit radiation at 2 {micro}m and below. Two approaches have been used for introducing impurities into Si to achieve high doping concentration. One was the diffusion technique, using spin-on dopants. The plasma wavelength ({lambda}{sub p}) of these filters could be adjusted by controlling the diffusion conditions. The minimum plasma wavelength achieved was 4.8 {micro}m. In addition, a significant amount of absorption was observed for the wavelength 2 {micro}m and below. The second approach was doping by ion implantation followed by thermal annealing with a capped layer of doped glass. Implantation with high dosage of B and As followed by high temperature annealing (> 1,000 C) resulted in a plasma wavelength that could be controlled between 3.5 and 6 {micro}m. The high temperature annealing (> 1,000 C) that was necessary to activate the dopant atoms and to heal the implantation damage, also caused significant absorption at 2 {micro}m. For phosphorus implanted Si, a moderate temperature (800--900 C) was sufficient to activate most of the phosphorus and to heal the implantation damage. The position of the plasma turn-on wavelength for an implantation dose of 2 {times} 10{sup 16} cm{sup {minus}2} of P was at 2.9 {micro}m. The absorption at 2 {micro}m was less than 20% and the reflection at 5 {micro}m was about 70%.

  16. UCRL-JRNL-228174 Iron-Doped Carbon Aerogels: Novel Porous Substrates

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    JRNL-228174 Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes S. A. Steiner, T. F. Baumann, J. Kong, J. H. Satcher, M. S. Dresselhaus February 20, 2007 Langmuir Disclaimer This document was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor the University of California nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or

  17. Role of microstructure and doping on the mechanical strength and toughness of polysilicon thin films

    SciTech Connect (OSTI)

    Yagnamurthy, Sivakumar; Boyce, Brad L.; Chasiotis, Ioannis

    2015-03-24

    We investigated the role of microstructure and doping on the mechanical strength of microscale tension specimens of columnar grain and laminated polysilicon doped with different concentrations of phosphorus. The average tensile strengths of undoped columnar and laminated polysilicon specimens were 1.3 ± 0.1 and 2.45 ± 0.3 GPa, respectively. Heavy doping reduced the strength of columnar polysilicon specimens to 0.9 ± 0.1 GPa. On grounds of Weibull statistics, the experimental results from specimens with gauge sections of 1000 μm × 100 μm × 1 μm predicted quite well the tensile strength of specimens with gauge sections of 150 μm × 3.75 μm × 1 μm, and vice versa. The large difference in the mechanical strength between columnar and laminated polysilicon specimens was due to sidewall flaws in columnar polysilicon, which were introduced during reactive ion etching (RIE) and were further exacerbated by phosphorus doping. Moreover, the removal of the large defect regions at the sidewalls of columnar polysilicon specimens via ion milling increased their tensile strength by 70%-100%, approaching the strength of laminated polysilicon, which implies that the two types of polysilicon films have comparable tensile strength. Measurements of the effective mode I critical stress intensity factor, KIC,eff, also showed that all types of polysilicon films had comparable resistance to fracture. Therefore, additional processing steps to eliminate the edge flaws in RIE patterned devices could result in significantly stronger microelectromechanical system components fabricated by conventional columnar polysilicon films.

  18. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect (OSTI)

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  19. Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers

    DOE Patents [OSTI]

    Krupke, W.F.; Page, R.H.; DeLoach, L.D.; Payne, S.A.

    1996-07-30

    A new class of solid state laser crystals and lasers are formed of transition metal doped sulfide, selenide, and telluride host crystals which have four fold coordinated substitutional sites. The host crystals include II-VI compounds. The host crystal is doped with a transition metal laser ion, e.g., chromium, cobalt or iron. In particular, Cr{sup 2+}-doped ZnS and ZnSe generate laser action near 2.3 {micro}m. Oxide, chloride, fluoride, bromide and iodide crystals with similar structures can also be used. Important aspects of these laser materials are the tetrahedral site symmetry of the host crystal, low excited state absorption losses and high luminescence efficiency, and the d{sup 4} and d{sup 6} electronic configurations of the transition metal ions. The same materials are also useful as saturable absorbers for passive Q-switching applications. The laser materials can be used as gain media in amplifiers and oscillators; these gain media can be incorporated into waveguides and semiconductor lasers. 18 figs.

  20. Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers

    DOE Patents [OSTI]

    Krupke, William F.; Page, Ralph H.; DeLoach, Laura D.; Payne, Stephen A.

    1996-01-01

    A new class of solid state laser crystals and lasers are formed of transition metal doped sulfide, selenide, and telluride host crystals which have four fold coordinated substitutional sites. The host crystals include II-VI compounds. The host crystal is doped with a transition metal laser ion, e.g., chromium, cobalt or iron. In particular, Cr.sup.2+ -doped ZnS and ZnSe generate laser action near 2.3 .mu.m. Oxide, chloride, fluoride, bromide and iodide crystals with similar structures can also be used. Important aspects of these laser materials are the tetrahedral site symmetry of the host crystal, low excited state absorption losses and high luminescence efficiency, and the d.sup.4 and d.sup.6 electronic configurations of the transition metal ions. The same materials are also useful as saturable absorbers for passive Q-switching applications. The laser materials can be used as gain media in amplifiers and oscillators; these gain media can be incorporated into waveguides and semiconductor lasers.